(US4518815-A)      Photoelectric conversion device comprises a substrate having an insulating surface, and a number n (n being an integer larger than one) of semiconductor elements Ul to Un sequentially formEd side by side and connected in series one after another. The semiconductor element Ui (i = 1, 2, ...n) has a first electrode Ei formed on the substrate, a non-single-crystal semiconductor laminate member Qi formed on the first electrode E1 and having formed therein at least one semiconductor junction and a second electrode Fi formed on the non-single-crystal semiconductor laminate member Qi in opposing relation to the first electrode Ei.    The second electrode Fj + 1 (j = 1, 2, ...(n-1) of the semiconductor element Uj+1 is coupled with the first electrode Ej of the semiconductor element Uj through a coupling portion Kj formed by an extension of the second electrode Fj+1.    The first electrodes Ej and Ej+1 are sepd. by a first groove Gj, and the second electrode Fj+1 extends on the non-single-crystal semiconductor laminate member Qi in opposing relation to the first electrode Ej. The second electrodes Fj and Fj+1 are sepd. by an isolating portion Hj in the non-single-crystal semiconductor laminate member Qi. A second groove Oj is cut in the non-single-crystal semiconductor laminate member Qi between the second electrode Fj+1 and the first electrode Ej to extend into the latter and the coupling portion Kj extends into the second groove Oj to be coupled with the side of the first electrode Ej exposed to the second groove Oj.    (US4527006-A)      Photoelectric conversion device comprises a substrate having an insulating surface; and several n (n being an integer larger than one) of semiconductor elements U1 to Un sequentially formed side by side and connected in series one after another. The semiconductor element Ui (i=1,2...n) has a first electrode Ei formed on the substrate, a non-single-crystal semiconductor laminate member Qi formed on the first electrode Ei and having at least one semiconductor junction, and a second electrode Fi formed on the non-single-crystal semiconductor laminate member Q1 in opposing relation to the first electrode Ei. A second electrode Fj+1(j=1,2...(n-1)) of the semiconductor element Uj + 1 is coupled with the electrode Ej of the semiconductor element Uj through a coupling portion Kj formed by an extension of the second electrode Fj+17.    The second electrode Fj+1 extends on the non-single crystal semiconductor laminate member Qi in opposing relation to the first electrode Ej. The second electrodes Fj and Fj+1 are sepd. by an isolating portion Hj; and the second electrode Fi is formed by a layered member having a conductive metal oxide layer making contact with the non-single-crystal semiconductor laminate member Qi and a conductive material layer formed on the metal oxide.    The conductive material layer of the second electrode Fi is a layer formed of chromium (material).    (US4528065-A)      A method of making a photoelectric conversion device comprises subjecting a conductive layer on an insulating substrate to laser scanning to generate multiple grooves.    A non-single crystal semi-conducting layer is applied over the grooved layer and the new layer again grooved using a laser beam. The upper layer is coated with a conductive layer and again grooved with a laser beam. This produces a structure with isolated portions on the non-single crystal laminate and sequentially arranged electrodes opposite to the first set of electrodes and coupled to them.    ADVANTAGE -   Good photoelectric conversion efficiency is obtained combined with high cell density. The structure is relatively stable during long term use. A(36pp)    (US4529829-A)      A photoelectric conversion device comprises an insulating substrate on which multiple semiconductor elements are sequentially formed. Each element has a first electrode on which a    non-single crystal semiconductor is laminated. A second electrode is coupled to the first via a coupling portion which is an extension of the second electrode. The electrodes are pref. formed of conductive indium or tin oxides.    ADVANTAGE -   Internal electrical losses are reduced allowing the photoelectric conversion efficiency to be raised.    (27pp)    (US4586241-A)      Photoelectric conversion device is made by initially forming a conductive metal oxide layer on a substrate and then by using a laser beam to form spaced grooves in the layer. Electrodes (E1-En) are formed between the grooves and the layer covered by a non single crystal semiconductor laminte layer contg. at least one junction. A second laser beam is used to form grooves (O1-On-1) in the laminate layer so that laminate members extend or the first electrodes, portion of which are exposed.    Deburring or etching is carried out ussing HF, HCl, or Freon liq. after the second grooves are formed. A second conductive layer is formed over the laminate members and extends into the grooves to provide coupling portion (K1-Kn-1) coupled to the first electrodes. Isolating portions are formed in the second conductive layer to form further electrodes (F1-Fn) opposite the first ones and connected to them via the coupling portion.    ADVANTAGE -   A low electrical loss is combined with the high density and a high conversion efficiency obtd.    (26pp)    (US4593151-A)      A photoelectric conversion device having multiple semiconductor elements sequentially formed side by side and connected in series.    The electrode connections are separated by a groove and linked by a extension of the electrode portion of the laminate into the groove.    The second electrodes are also separated by an isolating portion comprising a third groove opposite to the first electrode but spaced from the second groove. An oxidised portion of the non-single crystal semiconductor laminate member forms the lower surface of the third groove.    ADVANTAGE -   High photoelectric conversion efficiency can be obtained over an extended period of time.    (26pp)    (US4593152-A)      A photoelectric conversion device having an insulating substrate and multiple semiconducting elements sequentially formed side by side and connected in series. Each non single crystal semiconductor laminate member has a first semiconductor layer of a first conducting type in contact with a second layer of a second conducting type. The members being linked via an extension to the second electrode.    Pref. the first electrode is formed of a conductive metal oxide (indium oxide) with the first conducting type material based on tin oxide while the second conducting type material is P-type or indium oxide based material. A portion of the second electrode extending to provide an external connection onto the substrate extending from the semiconductor laminate.    ADVANTAGE -   The arrangement allows the external connections to be more readily made.    (28pp)    (US4597161-A)      Photoelectric conversion device is mfd. using a substrate composed of an insulating sheet, metallic sheet and overlying insulating film with thermal conductivity lower than glass. First conductive layer is formed on the insulating film, then n-1 sequentially arranged first grooves G1 to Gn-1 are formed in the first conductive layer using a first laser beam to produce n sequentially arranged first electrodes E1 to En.    A non-single crystal semiconductor layer contg. a semiconductor junction is formed over the grooves and electrodes, and then n-1 sequentially arranged grooves O1 to On-1 are formed using a second laser beam to produce semiconductor layer members Q1 to Qn. Grooves expose portions of first electrodes to the outside but do not extend to metal sheet due to low thermal conductivity of the insulating film.    A second continuous conductive layer is applied over the semiconductor layer members, and the grooves to provide coupling portions K1 to Kn-1 connected to first electrodes, through the grooves. Finally n-1 sequentially arranged isolating portions H1 to Hn-1 are formed in the second conductive layer on Q1 to Qn-1 to form n sequentially arranged second electrodes, F1 to Fn.    ADVANTAGE -   Mfg. process is facilitated. Substrate is not brittle and may be flexible. The prod. has good photoelectric conversion efficiency.    (25pp)    (US4622432-A)      A photoelectric conversion device comprises a substrate with a flexible insulating sheet formed by a metallic layer (2) and an insulating film (3) of organic resin with thermal conductivity less than glass. Series-connected semiconductor elements (U) are formed side-by-side on the substrate, and each has an electrode on the substrate, and a non-single-crystal semiconductor laminate (8-10) on the electrode.    A semiconductor junction is formed in the laminate, and a second electrode (F) on the laminate. The first electrode has a reflective conductive layer (4) of Al, Ag or their alloys on the insulating film and a transparent conductive layer (5) contacting the laminate. The second electrode is transparent and is coupled with the first through an extension of the second.    ADVANTAGE -   Flexibility makes the device easier to handle and to mount in a light receiving panel.    (25pp)    (US4631801-A)      Photoelectric conversion device is made with n semiconductor elements in series. Electrodes E1-En are first formed on the substrate sequentially followed by a non single crystal semiconductor junction covering the electrodes. This is followed by forming (n-1) sequentially arranged grooves O1 to On-1 to form members Q1-Qn on the electrodes which are exposed to the outside. A conductive layer is formed to provide coupling portion K1 to Kn-1 connected to the electrodes through the grooves. Isolating grooves H1-Hn-1 are formed in at least the conductive layer using a laser beam to form further electrodes F1-Fn sepd. by the grooves. The second electrodes Fj-1 (j = 1, 2...(n-1)) are connected to the first electrodes through the coupling portion after forming the isolating grooves by deburring or gas or liq. etching.    ADVANTAGE -   Low electrical loss is obtd. in a high density device.    (26pp)    (US4638108-A)      Photoelectric, conversion device has U1 to Un semiconductor elements connected in series. The element Ui (i = 1,2, 3 ...n) has an electrode Ei on the substrate of the device, and on which a non single crystal semiconductor laminate is formed. Another electrode Fi is on the laminate member and the two electrodes are sepd. by a groove Gj.    The second electrode Fj+1 of the element Uj+1 is coupled with the first electrode Ej of the element Uj through a coupling portion Kj formed by an extension of the second electrode and extending into a groove Oj in the laminate member Qj. The second electrode Fj and Fj+1 are sepd. by an isolating portion Hj which is a groove in the second electrode opposite the first electrode but spaced from the second groove Oj and finishing at the laminate member Qj.    ADVANTAGE -   High photoelectric conversion efficiency. (26pp)    (US4670294-A)      A photoelectric conversion device is formed by applying a first conductive layer on a substrate with (n-1) grooves thus producing n electrodes. A non-single crystal semiconductor layer is then applied extending onto the electrodes and into the grooves. A second set of (n-1) grooves are formed in the semiconductor material followed by a layer of conductive metal oxide which is linked to the first electrodes via the grooves. Isolating sections are then formed in the second conductive layer to form sequentially arranged second electrodes.    ADVANTAGE -   The device can be easily fabricated using a combination of etching and laser machining. High photoelectric conversion efficiency is maintained over an extended time. (26pp)    (US4686760-A)      (+23.11.83, 13.6.84, 31.7.85-US-554807, 620171, 761032)    Photoelectric conversion device has a substrate supporting a conductive layer on which spaced electrodes are arranged sepd. by grooves. A non-single crystal semiconductor laminate is formed on the substrate and has at least one junction.    The laminate extends onto the electrodes and into the grooves so that regions of the laminate on the electrodes may be non single crystal semiconductor laminate members (I).    Further grooves are formed extending through the members (I) except for the last one, and also through the electrodes except for the last one, to expose the tops and sides of all the electrodes.    Another conductive layer is formed on the substrate extending on (I) and into the further grooves to provide coupling portions connected to the tops and sides of the first electrodes except for the last one through respective grooves of the further series.    Isolating portions are sequentially arranged in at least the second conductive layer to form second electrodes sepd. by the isolating portions and opposite the first electrodes through (I).    The second electrode, on a laminate member on a first electrode of respective semiconductor elements on the substrate, is connected to the first electrode via a coupling portion.    ADVANTAGE -   High conversion efficiency is maintained for a long time.    (27pp)    (US4710397-A)      Photoelectric conversion device has a sequential series of semiconductor elements in series on a substrate. In mfr., a conductive layer is formed on the substrate and a laser beam used to form grooves in the layer for subsequent formation of sequentially arranged electrodes. A non-single crystal semiconductor laminate is formed on the substrate and at least one semiconductor junction formed in it extending to the first electrode and into the first groove.    Another laser beam is used to form further grooves and a sequence of non single crystal semiconductor laminate members and extending on the first electrodes. The distance between the first groove and the second one is greater than the thickness of the laminate. Coupling portions are formed by a second conductive layer. Isolating portions are formed in the second conductive layer using another laser to form second electrodes sepd. by isolating portions. The distance between the second groove and isolating portion is greater than the laminate thickness and the second electrode is connected to the first via a coupling portion.    ADVANTAGE -   Fabrication is easy allowing easy connection of external connection terminals with external load circuits. (26pp)