(US4950614-A)      The method involves (a) forming a 1st impurity non-single-crystalline semiconductor of a 1st conductivity type on a substrate, (b) forming a 1st intrinsic non-single-crystalline semiconductor layer, (c) forming a 2nd impurity 2nd conductivity type non-single-crystalline semiconductor layer, (d) forming a 3rd impurity non-single crystalline 1st conductivity type layer, (e) forming a 2nd intrinsic non-single-crystalline semiconductor layer, (f) forming a 4th impurity non-single-crystalline 2nd conductivity type layer, and (g) forming an electrode arrangement.    The 3rd impurity layer is formed from SixC1-x (x is between 0 and 1) which is doped with a p-type impurity. At least the portions of the 1st intrinsic semiconductor layer adjacent the 1st and 2nd impurity layers are photoannealed for crystallisation. The 1st intrinsic layer contains up to 1 at.% of one or more of O, N, C, P or B impurities.    USE/ADVANTAGE -   As a photoelectric conversion device, free from the defects of prior art devices. (11pp)o    (US4954856-A)      Tandem photoelectric conversion device comprises a) a first photoelectric conversion device incorporating a PIN junction where at least the portions of the I layer adjacent the P and N layers are crystallized where the degree of the crystallization of the portions of the I layer is greater than that of the P and N layers and b) a second photoelectric conversion device directly formed on the first device,. At least one of the p-tyre semi-conductor layer and the N-type semiconductor layer which constitute a PN junction between the first and second device, is made of silicon carbide. The I layer is photo annealed and contains 1 atom % or less oxygen.    ADVANTAGE -   New device can convert light, over a wide range of wavelength, to electric power having high voltage. (11pp)    (US4971919-A)      A photoelectric conversion device is made by firstly forming a first impurity non-single-crystalline semiconductor layer (I) of a first conductivity type. Then a first intrinsic non-single-crystalline semiconductor layer (II) is formed. A second impurity non-single-crystalline semiconductor layer (III) of a second conductivity type, opposite to the first conductivity type, is formed, layers (I) and (III), with layer (II) in between, constituting a first photoelectric conversion element. A metal layer (IV) of Mo, W, Ti, or Cr is then formed. An interface between layer (IV) and the semiconductor layer is converted to a metal silicide layer of thickness 5-20 angstroms, by virtue of a thermal reaction. The remaining metal layer is etched off. A third impurity non-single-crystalline semiconductor layer of the first conductivity type is formed. A second intrinsic non-single-crystalline layer is formed. A fourth impurity non-single-crystalline semiconductor layer of the second conductivity type, opposite to the first conductivity type, is formed, the third and fourth impurity layer in between, constituting a second photoelectric conversion element.$    ADVANTAGE -   New device can convert light to electric power having high voltage. (12pp)t    (US5045482-A)      Method comprises (a) forming a laminate member on a transparent substrate having a conductive surface by laminating at least 1st and 2nd PIN structures in that order, each with such a construction that a 1st-type non-single-crystal semiconductor layer, an I-type non-single-crystal semiconductor layer doped with a recombination centre neutraliser and a 2nd type non-single-crystal semiconductor type are laminated in that or reverse order, (b) forming an electrode composed at a transparent conductive layer on the laminate and a reflecting conductive layer, and (c) crystallising the I-type layer by light irradiation from the opposite side from the transparent substrate before the formation of the reflecting conductive layer of the electrode.    USE/ADVANTAGE -   Used for mfg. a photoelectric conv    (JP93025187-B)      Prodn. comprises forming 1st intrinsic Si semiconductor and 1st p- and n-type semiconductors on 1st electrode, and forming p- or n-type semiconductor and amorphous intrinsic semiconductor contg. H or halogen on the 1st semiconductors.    USE -   Used for solar cells. (J60240169-A)