(US4771015-A)      Multilayer structure electronic device with at least one band gap controlled semiconductor thin layers on a substrate is made by initially depositing at least one of the layers by plasma chemical vapour deposition. At least one other thin semiconductor layer is formed using a gaseous starting material and gaseous halogenic oxidising agent introduced separately into a reaction space. Precursors are formed contg. at least one in an excited state. The precursors are transferred to a film forming space to act as a feed source for the constituent element. A gas introducing system includes coaxial conduits including an outer one for the oxidising agent and an inner one for the starting material. The conduits extend into the film-forming space so that the exits of the inner orifices are inward to the outer conduit. The substrate is several to 20 cms. from the exit of the outer conduit.    USE/ADVANTAGE -   Mfr. of photovoltaic device, electrophotography, image forming member, etc. Improved interface characteristics over a large area. (11pp)    (JP94051909-B2)      The process consists of deposition on a substrate by plasma-enhanced CVD of one or more semiconductor layers together with bandgap modifiers and at least one other layer after this. This last layer is formed by reaction of constituents, including a halogen contg. oxidant, in a reaction chamber forming radicals, of which at least one is in an excited state which is used in the deposition chamber to form the required layer. The semiconductor layers have pref. a tetrahedral crystal structure and include Si and Ge which are provided for deposition as hydrides in linear or cyclical form. Bandgap modifiers used are e.g. aliphatic hydrocarbons with up to 6 C-atoms, O-containing cpds. of N, C, H or hydrocarbons and N-contg. hydrides, among them NH3 and N2H5N3.    An apparatus to carry out the processes is also claimed.    USE/ADVANTAGE -   The process saves energy and uses low-cost equipment. The properties of the devices produced are superior and homogeneous including the sensitive boundary-layers. The method can be used for the mfr. of solar cells, photo-electric and electro-photo-graphic devices.    (DE3644652-C2)      In the prodn. of an electronic appts., one or more layers form the introduction of a gaseous starting material, to produce an applied film and a gaseous oxidant contg. halogen gas, into a reaction chamber to effect chemical contact between them and form a no. of reaction prods. contg. a reaction prod. in excited state. This prod. is then fed into a film-forming chamber connected to the reaction chamber.    ADVANTAGE -   Improved electrical, optical and semiconductor properties.