(US4873201-A)      A number of semiconductor devices on a substrate each have a penetrating terminal extending from a conductive layer through a semiconductor layer where it is in electrical contact with a conductive interconnection layer. This interconnection layer is formed across intervening material in a separating space between adjacent semiconductor devices to electrically contact the semiconductor layer of the adjacent device, with the terminal being spaced apart from the spaces.    An upper conductive interconnection layer can be initially present and divided over the divided semiconductor material and other conductive layer, with the terminal material in contact with an adjacent device interconnection layer. Alternatively, the interconnection layer can be provided afterward extending from the terminal to the intervening material in the space. The penetrating terminal is formed by applying a laser beam to metal comprising material placed on the semiconductor layer of each device.    USE/ADVANTAGE -   Connects in series an array of photovoltaic devices. Reliable interconnections made in large volume process. (12pp)h    (US4965655-A)      A number of semi-conductor devices are provided on a substrate each having a penetrating terminal extending from a conductive layer through a semiconductor material layer where it is in electrical contact with a conductive interconnection layer formed across intervening material in a separating space between adjacent semi-conductor devices to electrically contact the semiconductor material layer of the adjacent device. The penetrating terminal is spaced apart form such separating spaces. A device is formed, electrically interconnected to the next device, from semiconductor material layer supported on a conductive layer on a substrate by dividing these two layers to form a number of semiconductor devices, forming an electrical insulating material in separating spaces provided by such dividing, and forming a penetrating terminal in each device through the semiconductor material layer on the substrate.    An upper conductive layer as an interconnection layer can be initially present and divided over the region of dividing of the semiconductor material and other conductive layer, with the material for the penetrating terminal being in contact with an adjacent semiconductor device interconnection layer. Alternatively, the interconnection layer can be provided afterward extending from the peneratrating terminal onto the intervening material in the separating space and into electrical contact with the semiconductor material layer of the adjacent device. The penetrating terminal is formed by applying a laser beam to metal comprising material placed on the semiconductor material layer of each semiconductor device.    ADVANTAGE -   Economical and reliable. (15pp)