EP413159-A  CHINESE PHYSICS, JULY-SEPT. vol. 8, no. 3 pages 804 - 807 KONG HONGZHI & AL. 'Growth of epitaxial films of the ternary compound Hg1-xCdxSe by using vapor transport technique';  DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB Inspec No. 1824751 KOGUCHI N ET AL 'Isothermal epitaxial growth of Hg/sub x/Cd/sub 1-x/Cr/sub 2/Se/sub 4/ solid-solution thin films on CdCr/sub 2/Se/sub 4/ single crystal substrates' & J. JPN. INST. MET. (JAPAN), JOURNAL OF THE JAPAN INSTITUTE OF METALS, JAPAN vol. 45, no. 7 , July 1981 , ISSN 0021-4876 pages 740 - 745;  JOURNAL OF VACUUM SCIENCE TECHNOLOGY vol. A5, no. 6 , November 1987 pages 3383 - 3385 FLEMING & AL. 'Control of the surface composition of isothermal vapor phase epitaxial mercury cadmium telluride';  FLEMING & AL.: "Control of the surface composition of isothermal vapor phase epitaxial mercury cadmium telluride", JOURNAL OF VACUUM SCIENCE TECHNOLOGY, vol. A5, no. 6, November 1987 (1987-11-01), pages 3383 - 3385;  DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; KOGUCHI N ET AL: "Isothermal epitaxial growth of Hg/sub x/Cd/sub 1-x/Cr/sub 2/Se/sub 4/ solid-solution thin films on CdCr/sub 2/Se/sub 4/ single crystal substrates", Database accession no. 1824751;  ;;;A;  KONG HONGZHI & AL.: "Growth of epitaxial films of the ternary compound Hg1-xCdxSe by using vapor transport technique", CHINESE PHYSICS, JULY-SEPT., vol. 8, no. 3, pages 804 - 807;  FLEMING & AL.: "Control of the surface composition of isothermal vapor phase epitaxial mercury cadmium telluride", JOURNAL OF VACUUM SCIENCE TECHNOLOGY, vol. A5, no. 6, November 1987 (1987-11-01), pages 3383 - 3385,relevantClaims[1,2,6,7,9-11,27],relevantPassages[&lt;pp&gt;W&lt;/pp&gt;];  DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; KOGUCHI N ET AL: "Isothermal epitaxial growth of Hg/sub x/Cd/sub 1-x/Cr/sub 2/Se/sub 4/ solid-solution thin films on CdCr/sub 2/Se/sub 4/ single crystal substrates", Database accession no. 1824751,relevantClaims[1,6,27],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;];  DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; KOGUCHI N ET AL: "Isothermal epitaxial growth of Hg/sub x/Cd/sub 1-x/Cr/sub 2/Se/sub 4/ solid-solution thin films on CdCr/sub 2/Se/sub 4/ single crystal substrates",relevantClaims[1,6,27],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;]US5399503-A  Chinese Physics, Jul.-Sep., vol. 8, No. 3, pp. 804-807, Kong, et al., "Growth of epitaxial films of the ternary compound HglxCdxSe by using vaport transport technique";  Database Inspec. Institute of Electrical Engineers, 1824751, Koguchi et al., "Isothermal epitaxial growth of Hg/sub x/Cd/sub 1-x/Cr/sub 2/Se/sub 4/solic-solution thin films on CdCr/sub 2/Se/sub 4/single crystal substrates";  Journal of Vacuum Science Technology, vol. A5, No. 6, Nov. 1987, pp. 3383-3385, Fleming et al., "Control of the surface composition of isothermal vapor phase epitaxial mercury cadmium telluride";  Journal of the Japan Institute of Metals, Japan, vol. 45, No. 7, Jul. 1981, pp. 740-745. GB-A-929 865 (International Business Machines Corp.), p. 1