(JP4032556-A)      The appts. comprises feeder to feed O2 into a vacuum chamber, connected to a vacuum pump to evacuate the chamber, while a substrate in the chamber is treated with ozone, produced by an ozonising optical source.    USE -   For forming metal films on glass substrates.    (EP459482-A3)      Film is prepd. by (a) prepg. a thin layer by sputtering without exposure of the substrate to a plasma, or by irradiating with low energy particles (no more than 500 eV), and (b) exposing substrate to a plasma, or irradiating with high energy particles (100-2000 eV, necessarily higher than in (a)).    When the first step involves the generation of a plasma, magnetron, facing targets, or ECR plasma sputtering may be used, such that the substrate is not exposed to the plasma. Exposure is prevented by placing the substrate outside the plasma or by confinement of the plasma using a magnetic field. In the second step the substrate may be exposed to plasma. When plasma operation is involved, both steps may be conducted in the same sputtering chamber, or in successive chambers with transfer in vacuo.    USE/ADVANTAGE -   Used in the mfr. of insulating substrates used in microelectronics, e.g. in a capacitor or solar cell. High density and repair of defects confer excellent insulating properties on the film, even for a film thickness below 1 micron. @(15pp Dwg.No.1/11)@    (JP95062233-B2)      Film is prepd. by (a) prepg. a thin layer by sputtering without exposure of the substrate to a plasma, or by irradiating with low energy particles (no more than 500 eV), and (b) exposing substrate to a plasma, or irradiating with high energy particles (100-2000 eV, necessarily higher than in (a)).    When the first step involves the generation of a plasma, magnetron, facing targets, or ECR plasma sputtering may be used, such that the substrate is not exposed to the plasma. Exposure is prevented by placing the substrate outside the plasma or by confinement of the plasma using a magnetic field. In the second step the substrate may be exposed to plasma. When plasma operation is involved, both steps may be conducted in the same sputtering chamber, or in successive chambers with transfer in vacuo.    USE/ADVANTAGE -   Used in the mfr. of insulating substrates used in microelectronics, e.g. in a capacitor or solar cell. High density and repair of defects confer excellent insulating properties on the film, even for a film thickness below 1 micron. @(15pp Dwg.No.1/11)@    1    (US5523166-A)       A metallic substrate coated with an insulating material, which comprises a metallic substrate having thereon an insulating thin film, said film comprising an oxide of at least one member selected from the group consisting of Ta, Al, Si, Ti, Ba, Sr, Zr, Y and Hf, the insulating thin film having a thickness of 500 nm or more and a current of 10-8 A/cm2 or less as measured by applying 20 V at an area of 20 mm2and a thickness of 500 nm.