WO9101274-A  CHEMICAL ABSTRACTS, Volume 105, No. 4, 28 July 1986, (Columbus, Ohio, US), A.A. BUSH, "Crystals of the Bismuth Germanate (Bi2Ge05-) Bismuth Vanadate (Bi4V2011) System", page 606, Ref. 33123g; & JPN. J. APPL. PHYS., Part 1, 1985, 24 (Suppl. 24-2), 625-627.;  CHEMICAL ABSTRACTS, Volume 107, No. 18, 2 November 1987, (Columbus, Ohio, US), V.G. OSIPYAN et al., "Bismuth Vanadate Ferroelectrics with a Laminar Structure", page 852, Ref. 166848k; & IZV. AKAD. NAUK SSSR, NEORG. MATER., 1987, 23(3), 523-525.;  CHEMICAL ABSTRACTS, Volume 110, No. 12, 20 March 1989, (Columbus, Ohio, US), V. KOSHELYAEVA et al., "Bismuth Vanadate (Bi4V2011)-Bismuth Germanate (Bi2Ge05), Bismuth Vanadate-Bismuth Tungstate (Bi2W06) and Bismuth Germanate-Bismuth Tungstate Systems", page 497, Ref. 102665c; & ZH. NEORG. KHIM., 1988, 33(12), 3143-3146.;  CHEMICAL ABSTRACTS, Volume 110, No. 14, 3 April 1989, (Columbus, Ohio, US), F. ABRAHAM et al., "Phase Transitions and Ionic Conductivity in Bismuth Vanadate (Bi4V2011), an Oxide with a Layered Structure", page 779, Ref 125933c; & SOLID STATE IONICS, 1988, 28, 529-532.;  CHEMICAL ABSTRACTS, Volume 110, No. 26, 26 June 1989, (Columbus, Ohio, US), BORISOV, V.N. et al., "Dielectric Properties of Bismuth Vanadate Complex Oxides", page 651, Ref. 241047r; & UKR. FIZ. ZH. (RUSS. ED.), 1989, 34(3), 408-410.;  PATENT ABSTRACTS OF JAPAN, Vol. 8, No. 156, C-234; & JP,A,59 057 915 (SHINGIJIYUTSU KAIHATSU JIGIYOUDAN) 03-04-1984.;  See also references of EP 0483259A1;  PATENT ABSTRACTS OF JAPAN, Vol. 8, No. 156, C-234;&JP,A,59 057 915 (SHINGIJIYUTSU KAIHATSU JIGIYOUDAN) 03-04-1984.;  CHEMICAL ABSTRACTS, Volume 105, No. 4, 28 July 1986, (Columbus, Ohio, US), A.A. BUSH, "Crystals of the Bismuth Germanate (Bi2Ge05-) Bismuth Vanadate (Bi4V2011) System", page 606, Ref. 33123g;&JPN. J. APPL. PHYS., Part 1, 1985, 24 (Suppl. 24-2), 625-627.;  CHEMICAL ABSTRACTS, Volume 107, No. 18, 2 November 1987, (Columbus, Ohio, US), V.G. OSIPYAN et al., "Bismuth Vanadate Ferroelectrics with a Laminar Structure", page 852, Ref. 166848k;&IZV. AKAD. NAUK SSSR, NEORG. MATER., 1987, 23(3), 523-525.;  CHEMICAL ABSTRACTS, Volume 110, No. 12, 20 March 1989, (Columbus, Ohio, US), V. KOSHELYAEVA et al., "Bismuth Vanadate (Bi4V2011)-Bismuth Germanate (Bi2Ge05), Bismuth Vanadate-Bismuth Tungstate (Bi2W06) and Bismuth Germanate-Bismuth Tungstate Systems", page 497, Ref. 102665c;&ZH. NEORG. KHIM., 1988, 33(12), 3143-3146.;  CHEMICAL ABSTRACTS, Volume 110, No. 14, 3 April 1989, (Columbus, Ohio, US), F. ABRAHAM et al., "Phase Transitions and Ionic Conductivity in Bismuth Vanadate (Bi4V2011), an Oxide with a Layered Structure", page 779, Ref 125933c;&SOLID STATE IONICS, 1988, 28, 529-532.;  CHEMICAL ABSTRACTS, Volume 110, No. 26, 26 June 1989, (Columbus, Ohio, US), BORISOV, V.N. et al., "Dielectric Properties of Bismuth Vanadate Complex Oxides", page 651, Ref. 241047r;&UKR. FIZ. ZH. (RUSS. ED.), 1989, 34(3), 408-410.FR2649970-A  CHEMICAL ABSTRACTS, vol. 105, no. 4, 28 juillet 1986, page 606, abrege no. 33123g, Columbus, Ohio, US; A.A. BUSH: "Chrystals of the bismuth germanate (Bi2GeO5)-bismuth vanadate (Bi4V2O11) system", & JPN. J. APPL. PHYS., PART 1 1985, 24 (SUPPL. 24-2), 625-627;  CHEMICAL ABSTRACTS, vol. 107, no. 18, 2 novembre 1987, page 852, abrege no. 166848k, Columbus, Ohio, US; V.G. OSIPYAN et al.: "Bismuth vanadate ferroelectrics with a laminar structure", & IZV. AKAD. NAUK SSSR, NEORG. MATER 1987, 23 (3), 523-525;  CHEMICAL ABSTRACTS, vol. 110, no. 12, 20 mars 1989, page 497, abrege no. 102665c, Columbus, Ohio, US; V. KOSHELYAEVA et al.: "Bismuth vanadate (Bi4V2O11)-bismuth germanate (Bi2GeO5), bismuth vanadate-bismuth tungstate (Bi2WO6) and bismuth germanate-bismuth tungstate systems", & ZH. NEORG. KHIM. 1988, 33(12), 3143-3146;  CHEMICAL ABSTRACTS, vol. 110, no. 14, 3 avril 1989, page 779, abrege no. 125933c, Columbus, Ohio, US; F. ABRAHAM et al.: "Phase transitions a3d ionic conductivity in bismuth vanadate (Bi4V2O11), an oxide with a layered structure", & SOLID STATE IONICS 1988, 28, 529-532;  CHEMICAL ABSTRACTS, vol. 110, no. 26, 26 juin 1989, page 651, abrege no. 241047r, Columbus, Ohio, US; V.N. BORISOV et al.: "Dielectric properties of bismuth vanadate complex oxides", & UKR. FIZ. ZH. (RUSS. ED.) 1989, 34 (3), 408-410;  PATENT ABSTRACT OF JAPAN, vol. 12, no. 165 (C-496)[3012], 18 mai 1988; & JP-A-62 277 485 (SHARP CORP.) 02-12-1987;  PATENT ABSTRACTS OF JAPAN, vol. 8, no. 156 (C-234); & JP-A-59 57 915 (SHINGIJIYUTU KAIHATSU JIGIYOUDAN) 03-04-1984;  PROCEEDINGS OF THE SIXTH INTERNATIONAL MEETING ON FERROELECTRICITY, Kobe, 1985, JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 24, suppl. 24-2, 1985, pages 625-627; A.A. BUSH et al.: "Crystals of the B12Ge05-Bi4Y2011 system";  PATENT ABSTRACTS OF JAPAN, vol. 8, no. 156 (C-234);&JP-A-59 57 915 (SHINGIJIYUTU KAIHATSU JIGIYOUDAN) 03-04-1984;  CHEMICAL ABSTRACTS, vol. 105, no. 4, 28 juillet 1986, page 606, abrege no. 33123g, Columbus, Ohio, US; A.A. BUSH: "Chrystals of the bismuth germanate (Bi2GeO5)-bismuth vanadate (Bi4V2O11) system",&JPN. J. APPL. PHYS., PART 1 1985, 24 (SUPPL. 24-2), 625-627;  CHEMICAL ABSTRACTS, vol. 107, no. 18, 2 novembre 1987, page 852, abrege no. 166848k, Columbus, Ohio, US; V.G. OSIPYAN et al.: "Bismuth vanadate ferroelectrics with a laminar structure",&IZV. AKAD. NAUK SSSR, NEORG. MATER 1987, 23 (3), 523-525;  CHEMICAL ABSTRACTS, vol. 110, no. 12, 20 mars 1989, page 497, abrege no. 102665c, Columbus, Ohio, US; V. KOSHELYAEVA et al.: "Bismuth vanadate (Bi4V2O11)-bismuth germanate (Bi2GeO5), bismuth vanadate-bismuth tungstate (Bi2WO6) and bismuth germanate-bismuth tungstate systems",&ZH. NEORG. KHIM. 1988, 33(12), 3143-3146;  CHEMICAL ABSTRACTS, vol. 110, no. 14, 3 avril 1989, page 779, abrege no. 125933c, Columbus, Ohio, US; F. ABRAHAM et al.: "Phase transitions a3d ionic conductivity in bismuth vanadate (Bi4V2O11), an oxide with a layered structure",&SOLID STATE IONICS 1988, 28, 529-532;  CHEMICAL ABSTRACTS, vol. 110, no. 26, 26 juin 1989, page 651, abrege no. 241047r, Columbus, Ohio, US; V.N. BORISOV et al.: "Dielectric properties of bismuth vanadate complex oxides",&UKR. FIZ. ZH. (RUSS. ED.) 1989, 34 (3), 408-410;  PATENT ABSTRACT OF JAPAN, vol. 12, no. 165 (C-496)[3012], 18 mai 1988;&JP-A-62 277 485 (SHARP CORP.) 02-12-1987EP483259-A  Chemical Abstracts, vol. 110, No. 14, 3 April 1989, (Columbus, Ohio, US), F. Abraham et al: "Phase transitions and ionic conductivity in bismuth vanadate (Bi4V2011), an oxide with a layered structure", page 779, ref. 125933c, & Solid State Ionics 1988, 28, 529-532;  Chemical Abstracts, volume 110, No. 12, 20 March 1989, (Columbus, Ohio, US), V. Koshelyaeva et al: "Bismuth vanadate (Bi4V2O11)-bismuth germanate (Bi2Ge05), bismuth vanadate-bismuth tungstate (Bi2WO6) and bismuth germanate-bismuth tungstate systems", page 497, ref. 102665c, & Zh. Neorg. Khim. 1988, 33(12), 3143-3146;  Patent Abstracts of Japan, vol. 8, No. 156, C234, abstract of JP 59-57915, publ. 1984-04-03 (SHINGIJIYUTSU KAIHATSU JIGIYOUDAN);  See also references of WO 9101274A1;  Chemical Abstracts, volume 110, No. 12, 20 March 1989, (Columbus, Ohio, US), V. Koshelyaeva et al: "Bismuth vanadate (Bi4V2O11)-bismuth germanate (Bi2Ge05), bismuth vanadate-bismuth tungstate (Bi2WO6) and bismuth germanate-bismuth tungstate systems", page 497, ref. 102665c,&Zh. Neorg. Khim. 1988, 33(12), 3143-3146;  Chemical Abstracts, vol. 110, No. 14, 3 April 1989, (Columbus, Ohio, US), F. Abraham et al: "Phase transitions and ionic conductivity in bismuth vanadate (Bi4V2011), an oxide with a layered structure", page 779, ref. 125933c,&Solid State Ionics 1988, 28, 529-532US5227257-A  Abraham et al. "Phase Transistions and Ionic Conductivity in Bi4Y2O11 . . . " Solid State Ionics, vol. 28-30, pp. 529-532 (1988).;  Chemial Abstracts, vol. 107, No. 18, 2 Nov. 1987, p. 852, abstract No. 166848k, Columbus, Ohio, U.S.; V. G. Osipyan et al.;  Chemical Abstracts, vol. 110, No. 12, 20 Mar. 1989, p. 497, abstract No. 102665c, Columbus, Ohio, U.S.: V. 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