(US5155567-A)      The photoconducting structure comprises a conductive matrix of amorphous Si for transporting photocarriers, and having a 1st band gap and a 1st Si network, and a photocarrier-producing region of the amorphous Si. This region has a boundary within the matrix, and a 2nd band gap larger than the 1st, producing the photocarrier in response to optical irradiation, and a 2nd Si network. This 2nd network is connected in conformity to the 1st network without forming dangling bonds at the boundary, so that the photocarriers are transferred without trapping at the boundary. The 2nd band gap is achieved by doping with O, N or C. The photocarrier producing region is 100 Angstroms-10 microns in size.    USE/ADVANTAGE -   For a photoconductive device (claimed). High photosensitivity and wide band gap. Decrease in carrier mobility is prevented.    (US5283207-A)      The method comprises (a) introducing a 1st source gas material contg. Si into a reaction vessel held at a predetermined temp. and pressure, (b) releasing Si in the vessel due to decomposition of the source gas material, (c) introducing a 2nd source gas material contg. an element which increases band gap when incorporated into Si, this 2nd material releasing molecules of this element and by-prod. molecules when dissociated, (d) applying energy to dissociate the 2nd material, and (e) depositing Si and the other element on a substrate to form an amorphous Si layer that comprises isolated regions of amorphous Si enriched with the other element in a matrix of amorphous Si.    The obtd. photoconducting structure includes a photoconducting region of a 1st network of Si and photocarrier producing regions of a 2nd network of Si, such that the photocarrier producing regions, each defined by a boundary, distribute in the photoconducting region and such that the 2nd network is connected in conformity to the 1st network at the boundary without forming dangling bonds.    USE/ADVANTAGE -   Used in the photosensitive drums of copiers and printers. High photosensitivity and a wide bandgap, while a decrease in the mobility of carriers is prevented.    (DE4101110-C2)      Material has (a) a photocarrier generating zone, which generates a photocarrier (I) in a photoconductive amterial with wide band spacing; and (b) a separate (I) transport zone, which transports (I) in a photoconductive material, contg. amorphous Si material, to an electrode to which a suitable potential is applied.    Pref. photoconductive material is based on Si and contains O, N and/or S and also amorphous Si, which inhibits dangling bond formation by a Si atom. Main atom in the (I) generating zone is a Si atom, such that the zone has proximity class 2 of an amorphous Si contg. O, N and/or C and also an atom inhibiting a Si dangling bond; and one end of the bond extending from proximity class 2 is combined with a Si atom of proximity class 1. Pref. Classes 1 and 2 are distributed in a certain microscopic zone so that the ratio H of class 2/class 1 is 0.1-60, class 1 being an 'ocean' and class 2 an 'island'. Size of class 2 is 100 A to 10 microns. Class 1 is activated with a gp. III or V dopant. Any element except O, N or C is used to inhibit dangling bonds in class 1. In class 2, the dangling bond is pref. less than 0.5% of all bonds.    USE/ADVANTAGE -   Material is esp. suitable for making a photoconductive drum, photosensor, solar cell or thin film transistor. It has high photoconductivity, a wide band spacing and undiminished mobility.    (JP3099957-B2)      Material has (a) a photocarrier generating zone, which generates a photocarrier (I) in a photoconductive amterial with wide band spacing; and (b) a separate (I) transport zone, which transports (I) in a photoconductive material, contg. amorphous Si material, to an electrode to which a suitable potential is applied.    Pref. photoconductive material is based on Si and contains O, N and/or S and also amorphous Si, which inhibits dangling bond formation by a Si atom. Main atom in the (I) generating zone is a Si atom, such that the zone has proximity class 2 of an amorphous Si contg. O, N and/or C and also an atom inhibiting a Si dangling bond; and one end of the bond extending from proximity class 2 is combined with a Si atom of proximity class 1. Pref. Classes 1 and 2 are distributed in a certain microscopic zone so that the ratio H of class 2/class 1 is 0.1-60, class 1 being an 'ocean' and class 2 an 'island'. Size of class 2 is 100 A to 10 microns. Class 1 is activated with a gp. III or V dopant. Any element except O, N or C is used to inhibit dangling bonds in class 1. In class 2, the dangling bond is pref. less than 0.5% of all bonds.    USE/ADVANTAGE -   Material is esp. suitable for making a photoconductive drum, photosensor, solar cell or thin film transistor. It has high photoconductivity, a wide band spacing and undiminished mobility.