(JP6509213-W)      Formation of thin-film solar cells comprising a substrate on which a multi-layer of e.g. CuInSe2 is deposited and where Cu and In concns. vary in the layer, comprises the following. A substrate is placed on the inside wall of a rotatable, cylindrical carrier device. Sources of Se, Cu and In for depositing the multi-layer are provided and the substrate is heated. The Cu and/or In is deposited by passing the source axially through the carrier device; by moving the carrier device and/or sources while rotating the carrier.    The multilayer is pref. CuInSe2 or a closely related cpd. where Cu and In can be totally or partially replaced with Ag and Ga respectively; and where Se can be replaced with S and Te.    ADVANTAGE -   The method involves one in situ process stage and is therefore quick and inexpensive. It provides a more uniform layer on large surfaces and more controlled layer compsn. than in prior art. The formation of Cu nodules, as known in prior art, is suppressed without the need for two process stages. The inner surface of the carrier device is effectively covered by pref. planar substrates and so the yield is greatly increased compared with conventional method.    (US5445973-A)      Thin film solar cells are mfd. by (a) positioning plates of substrate material on the inner periphery of a tubular substrate carrier, (b) providing source materials contg. substances to be deposited on the plates, spaced from each other along a line extending in the longitudinal direction of the substrate carrier, to provide a desired compsn. gradient of the respective substances in the film thickness direction, (c) heating the substrates and source materials, (d) moving the substrate carrier and material sources relative to each other in a single movement in the axial direction during deposition, to bring the sources within the inner periphery of the substrate carrier, and (e) rotating the substrate carrier and sources relative to each other to form a uniform layer on the substrates. The deposited layer is CuInSe2.    ADVANTAGE -   Improved yield, with a simplified mfg. process.