(WO9205586-A)      The layer esp. CuInSe2, is deposited by plating of a ternary semiconductor layer on a conductive substrate. The layer consists of elements of the first and third subgroups and the 6th gp. of the Periodic System. The process features deposition of a binary alloy from ions of the elements from the 1st and 3rd Subgroups and simultaneous deposition of the element from the 6th gp. present in the bath as suspended particles, pref. in a concn. of 10-500 g/l, which may be modified by surface active agents. The finely dispersed particles are then consumed in the prodn. of the alloy during a thermal treatment. If Se is used a heat treatment is used to convert it into the hexagonal semiconducting form.    The binary alloy contains between 25-75 vol.% of each element of the binary alloy vol. The particle content of the layer is 25-70 vol.% of the ternary alloy vol. The electrolysis can be carried out as pulse or jet plating and/or with ultrasonic agitation. The process can include sedimentation. It can be carried out as a continuous belt plating process. The particles to be included on the layer pref. are made by pulverisation of the element and sieving or by reduction of selenious acid by SO2.    USE/ADVANTAGE -   The process allows the use of stable plating baths which allow reliable prodn. to be carried out. The process also avoids environmentally hazardous operations involving Se. The process is used for the mfr. of solar cells.    (DE4103291-C)      Ternary semiconductor absorber layer for solar cells, partic. a CuInSe2 layer, is formed by electrolytically depositing binary CuIn alloy from a bath which contains the Se component, suspended for simultaneous deposition in a fine dispersion. The vol. proportion of the dispersed constituent in the binary alloy is 25-75%. Dispersion electrolysis is carried out by pulse plating, jet plating and/or ultrasonics.    ADVANTAGE -   Can be applied to mass prodn.    (JP5506334-W)      The layer esp. CuInSe2, is deposited by plating of a ternary semiconductor layer on a conductive substrate. The layer consists of elements of the first and third subgroups and the 6th gp. of the Periodic System. The process features deposition of a binary alloy from ions of the elements from the 1st and 3rd Subgroups and simultaneous deposition of the element from the 6th gp. present in the bath as suspended particles, pref. in a concn. of 10-500 g/l, which may be modified by surface active agents. The finely dispersed particles are then consumed in the prodn. of the alloy during a thermal treatment. If Se is used, a heat treatment is used to convert it into the hexagonal semiconducting form.    The binary alloy contains between 25-75 vol.% of each element of the binary alloy vol. The particle content of the layer is 25-70 vol.% of the ternary alloy vol. The electrolysis can be carried out as pulse or jet plating and/or with ultrasonic agitation. The process can include sedimentation. It can be carried out as a continuous belt plating process. The particles to be included on the layer pref. are made by pulverisation of the element and sieving or by reduction of selenious acid by SO2.    USE/ADVANTAGE -   The process allows the use of stable plating baths which allow reliable prodn. to be carried out. The process also avoids environmentally hazardous operations involving Se. The process is used for the mfr. of solar cell    (US5275714-A)      Ternary semiconductor absorber layer for solcar cells is mfd. by a method in which a binary alloy of elements of Gps. 1B and IIIA are electrolytically deposited on a substrate, pref. a continuously moving band, while a third alloy component of Gp. VIA is simultaneously incorporated form afinely dispersed suspension. Binary alloy is e.g. Cu-In while third component is pref. Se. The ternary semiconductor layer is produced by heat treatment.    ADVANTAGE -   Avoids the instability of ternary baths.