(DE4134261-C2)      Devices are formed by using a carrier in the form of a tape which is coated with an insulating layer in which windows have been formed. The semiconductor material to be deposited is dissolved and the tape passed along the surface of the soln. in such a way that single crystalline regions grow on the tape.    The semiconductor material pref. comprises Si, Ge, Ga, As, In or P, and the solvent pref. comprises In, Sb, Zn, Sn, Ga or B. The tape material includes pref. Al, stainless steel, Cu and/or Ni.    USE/ADVANTAGE -   The process is fast, e.g. can deposit a succession of layers, forming an active structure, in one min. The active semiconductor consists of single crystalline regions which gives the devices a high efficiency, e.g. up to 13.7%. The formation temp. is low, allowing flexible materials to be used for the tape, which alllows serial connection of cells to be made easily and with high yield and allows a continuous process to be used. The tape material can be used as one of the electrodes of the cell. As a result of the above features, the cell cost has been significantly reduced.    (JP2693032-B2)      Devices are formed by using a carrier in the form of a tape which is coated with an insulating layer in which windows have been formed. The semiconductor material to be deposited is dissolved and the tape passed along the surface of the soln. in such a way that single crystalline regions grow on the tape.    The semiconductor material pref. comprises Si, Ge, Ga, As, In or P, and the solvent pref. comprises In, Sb, Zn, Sn, Ga or B. The tape material includes pref. Al, stainless steel, Cu and/or Ni.    USE/ADVANTAGE -   The process is fast, e.g. can deposit a succession of layers, forming an active structure, in one min. The active semiconductor consists of single crystalline regions which gives the devices a high efficiency, e.g. up to 13.7%. The formation temp. is low, allowing flexible materials to be used for the tape, which alllows serial connection of cells to be made easily and with high yield and allows a continuous process to be used. The tape material can be used as one of the electrodes of the cell. As a result of the above features, the cell cost has been significantly reduced.    (US5712199-A)      Devices are formed by using a carrier in the form of a tape which is coated with an insulating layer in which windows have been formed. The semiconductor material to be deposited is dissolved and the tape passed along the surface of the soln. in such a way that single crystalline regions grow on the tape.    The semiconductor material pref. comprises Si, Ge, Ga, As, In or P, and the solvent pref. comprises In, Sb, Zn, Sn, Ga or B. The tape material includes pref. Al, stainless steel, Cu and/or Ni.    USE/ADVANTAGE -   The process is fast, e.g. can deposit a succession of layers, forming an active structure, in one min. The active semiconductor consists of single crystalline regions which gives the devices a high efficiency, e.g. up to 13.7%. The formation temp. is low, allowing flexible materials to be used for the tape, which alllows serial connection of cells to be made easily and with high yield and allows a continuous process to be used. The tape material can be used as one of the electrodes of the cell. As a result of the above features, the cell cost has been significantly reduced.