(WO9209100-A1)      An aerosol method for depositing Si and forming films on substrates comprises aerosolising and electrostatically charging Si powder particles (17), grounding a substrate (18) to give an opposite polarity, coating the particles on the substrate, and heat-treating the coated substrate to form a Si film.    Pref. the substrate is semiconducting, insulating or conducting, pref. Si, pref. n- or p-doped. Pref. it is an insulating sapphire or conducting Mo and pref. heat-treatment is under flowing Ar for 1-24 hours at 100-1430 deg.C. to melt the powder and form a Si film, which is pref. polycrystalline. Pref. deposition thickness is controlled by time, velocity of coating, and charge difference. Pref. the charged particles travel 17cm to the substrate, spray time is 1-3s., velocity is 11.2Nm3hr(-1) and the charge level is 0-100,000 V d.c., pref. 75 kV.    USE/ADVANTAGE -   An aerosol method of depositing and forming Si films on substrates (claimed) is provided which is useful for IC processing, solar cell mfr. and in the chemical and metallurgical industries. The method is economical, does not reqire expensive appts. and avoids the use of unsafe gases.    (JP5505909-W)      An aerosol method for depositing Si and forming films on substrates comprises aerosolising and electrostatically charging Si powder particles, grounding a substrate to give an opposite polarity, coating the particles on the substrate, and heat-treating the coated substrate to form a Si film.    Pref. the substrate is semiconducting, insulating or conducting, pref. Si pref. n- or p-doped. Pref. it is an insulating sapphire or conducting Mo and pref. heat-treatment is under flowing Ar for 1-24 hours at 100-1430 deg.C. to melt the powder and form a Si film, which is pref. polycrystalline. Pref. deposition thickness is controlled by time, velocity of coating, and charge difference. Pref. the charged particles travel 17cm to the substrate, spray time is 1-3s., velocity is 11.2Nm3hr(-1) and the charge level is 0-100,000 V d.c., pref. 75 kV.    USE/ADVANTAGE -   An aerosol method of depositing and forming Si films on substrates (claimed) is provided which is useful for IC processing, solar cell mfr. and in the chemical and metallurgical industries. The method is economical, does not require expensive appts. and avoids the use of unsafe gases.