(JP4280975-A)      In forming a ZnO transparent conductive film on a substrate, pure water and an organic Zn metal material are supplied in vacuum chamber by a carrier gas to adjust gas pressure to 1-30 Torrs. A diborane gas or a B-, or Al-contg. cpd. is simultaneously supplied in the chamber. A film is made in the gas while heating the substrate in the chamber to a predetermined temp.    USE -   The method produces the transparent conductive film for use in a touch switch, LCD, or EL element at low temp., 150 deg.C    (DE4207783-C2)      Deposition of transparent, conductable ZnO layers in the gas phase onto substrate (2) comprises passing water vapour and organometallic Zn-cpd., in carrier gas, into vacuum chamber at reduced pressure; feeding B- and Al-contg. cpds. into the chamber; heating the substrate to a temp. and irradiating with UV light of wavelength not more than 254 nm; and adjusting the gas pressure in the chamber to 1.3-39 hPa during layer formation.    The organometallic Zn-cpd. is pref. dimethyl-Zn, or diethyl-Zn, and the B- and Al-contg. cpds. are pref. diborane, trimethyl-B, triethyl-B, triethyl-Al, trisobutyl-Al, or dimethylalane.    ADVANTAGE -   The process takes place at low temp.    (JP2545306-B2)      Mfg. a transparent conductive ZnO thin film on a substrate by means of chemical vaporisation comprises: (1) feeding pure water and an organometallic Zn-contg. material, separately and entrained by a carrier gas, into a vacuum chamber (1) with a reduced internal pressure; (2) adjusting the gas pressure in the chamber to 1-30 torr; and (3) feeding gaseous diborane or a cpd. contg. B or Al into the vacuum chamber and heating a substrate (2) disposed in the chamber to a predetermined temp., resulting in the formation of the thin film on the substrate under the cited gas pressure.    USE/ADVANTAGE -   The ZnO film is used as a transparent electrode and as a non-reflecting layer for solar cells made of amorphous Si or CuInSe2. The film can be formed at a low. temp., and its surface structure can be altered by changing the film-forming conditions. The latter is partic. important if light-scattering is to be prevented in a solar cell.    .D