(FR2684801-A1)      The method includes producing a GaAs in InP substrate and forming an aluminium rich (at least 40%) layer by epitaxy comprising either AlGaAs or AlInAs. An active aluminium rich layer is then formed on this layer, and a series of components are formed by etching and metallisation.    A protective layer of passivation material or photoresist is applied, and this is selectively etched. A common support plate is attached, and the intermediate layer is then dissolved by a solvent in exposed areas.    ADVANTAGE -   Dissolution of intermediate layers allows separation of components on substrate, reducing final weight. Eg for solar cells and electroluminescent devices    (JP7505257-W)      The method includes producing a GaAs in InP substrate (1) and forming an aluminium rich (at least 40%) layer (2) by epitaxy comprising either AlGaAs or AlInAs. An active aluminium rich layer (3) is then formed on this layer, and a series of components are formed by etching and metallisation.$    A protective layer (6) of passivation material or photoresist is applied, and this is selectively etched. A common support plate (8) is attached, and the intermediate layer is then dissolved by a solvent in exposed areas.    ADVANTAGE -   Dissolution of intermediate layers allows separation of components on substrate, reducing final weight. Eg for solar cells and electroluminescent devices.    (EP617839-B1)      The method includes producing a GaAs in InP substrate (1) and forming an aluminium rich (at least 40%) layer (2) by epitaxy comprising either AlGaAs or AlInAs. An active aluminium rich layer (3) is then formed on this layer, and a series of components are formed by etching and metallisation.$    A protective layer (6) of passivation material or photoresist is applied, and this is selectively etched. A common support plate (8) is attached, and the intermediate layer is then dissolved by a solvent in exposed areas.    ADVANTAGE -   Dissolution of intermediate layers allows separation of components on substrate, reducing final weight. Eg for solar cells and electroluminescent devices.    (US5827751-A)      The method includes producing a GaAs in InP substrate (1) and forming an aluminium rich (at least 40%) layer (2) by epitaxy comprising either AlGaAs or AlInAs. An active aluminium rich layer (3) is then formed on this layer, and a series of components are formed by etching and metallisation.$    A protective layer (6) of passivation material or photoresist is applied, and this is selectively etched. A common support plate (8) is attached, and the intermediate layer is then dissolved by a solvent in exposed areas.    ADVANTAGE -   Dissolution of intermediate layers allows separation of components on substrate, reducing final weight. Eg for solar cells and electroluminescent devices.