EP573030-A2  JAPANESE JOURNAL OF APPLIED PHYSICS. vol. 25, no. 1 , January 1986 , TOKYO JP pages L7 - L9 T.YOSHIDA ET AL. 'NEW MATERIAL FOR P-TYPE WINDOW LAYER IN A-SI SOLAR CELLS';  JAPANESE JOURNAL OF APPLIED PHYSICS. vol. 25, no. 12 , December 1986 , TOKYO JP pages 1778 - 1782 T.KAMIMURA ET AL. 'EFFECT ON HYDROGEN DILUTION OF SILANE IN HYDROGENATED AMORPHOUS SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR DEPOSITION';  PATENT ABSTRACTS OF JAPAN vol. 016, no. 074 (E-1170)24 February 1992 & JP-A-03 265 142 (TOSHIBA CORP) 26 November 1991US5391410-A  Cros et al, "IR, ESR and resistivity measurements on amorphous silicon oxynitride films prepared by PECVD at low temperature", J. Non-cryst. Solids, 90(1-3) pp. 287-290, 1987;  Ichikawa et al, "12% Two-Stacked a-Si:H tandem cells with a new P-layer Structure";  Japanese Journal of Applied Physics, vol. 25, No. 1, Jan. 1986, Tokyo JP, pp. L7-L9, T. Yoshida et al, "New Material for P-type Window Layer in A-Si Solar Cells";  Japanese Journal of Applied Physics, vol. 25, No. 12, Dec. 1986, Tokyo JP, pp. 1778-1782, T. Kamimura et al "Effect on Hydrogen Dilution of Silane in Hydrogenated Amorphous Silicon Films Prepared by Photochemical Vapor Deposition";  Patent Abstracts of Japan, vol. 016, No. 074 (E-1170) 24021992;  The 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, 07101991-11101991, p1-6EP573030-A3  PATENT ABSTRACTS OF JAPAN vol. 016, no. 074 (E - 1170) 24 February 1992 (1992-02-24);  T.KAMIMURA ET AL.: "EFFECT ON HYDROGEN DILUTION OF SILANE IN HYDROGENATED AMORPHOUS SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR DEPOSITION", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 25, no. 12, December 1986 (1986-12-01), TOKYO JP, pages 1778 - 1782, XP000818542, DOI: doi:10.1143/JJAP.25.1778;  T.YOSHIDA ET AL.: "NEW MATERIAL FOR P-TYPE WINDOW LAYER IN A-SI SOLAR CELLS", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 25, no. 1, January 1986 (1986-01-01), TOKYO JP, pages L7 - L9;  PATENT ABSTRACTS OF JAPAN vol. 016, no. 074 (E - 1170) 24 February 1992 (1992-02-24),relevantClaims[1,5],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;];  T.KAMIMURA ET AL.: "EFFECT ON HYDROGEN DILUTION OF SILANE IN HYDROGENATED AMORPHOUS SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR DEPOSITION", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 25, no. 12, December 1986 (1986-12-01), TOKYO JP, pages 1778 - 1782, XP000818542, DOI: doi:10.1143/JJAP.25.1778,relevantClaims[3,4,7,8],relevantPassages[&lt;pp&gt;1779&lt;/pp&gt;&lt;column&gt;1&lt;/column&gt;&lt;para&gt;3&lt;/para&gt;|&lt;figure&gt;3&lt;/figure&gt;|&lt;pp&gt;1780&lt;/pp&gt;&lt;column&gt;2&lt;/column&gt;&lt;para&gt;2&lt;/para&gt;&lt;ppl&gt;1781&lt;/ppl&gt;&lt;coll&gt;1&lt;/coll&gt;&lt;paral&gt;3&lt;/paral&gt;|&lt;figure&gt;7&lt;/figure&gt;];  T.YOSHIDA ET AL.: "NEW MATERIAL FOR P-TYPE WINDOW LAYER IN A-SI SOLAR CELLS", JAPANESE JOURNAL OF APPLIED PHYSICS., vol. 25, no. 1, January 1986 (1986-01-01), TOKYO JP, pages L7 - L9,relevantClaims[1,2,5,6],relevantPassages[*ABSTRACT*]