Mfr. of an integrated photoelectric receiving device having a photodetector and a transistor formed on a semi-dielectric substrate, comprises: (a) etching a photodetector forming area of a predetermined depth on the substrate by using a selective etchant; (b) sequentially forming an n-type channel layer, an etchant stopper layer and an absorption layer on the substrate etched; (c) removing the absorption layer excluding the photodetector forming area by the selective etchant; (d) sequentially removing the etchant stopper layer and the type n-channel layer between the photodetector and the transistor forming areas to electrically insulate the photodetector and the transistor; (e) sequentially forming a p-type InP layer and a p-type InGaAs layer on the entire surface of the substrate exposed; (f) selectively etching the p-type InGaAs layer positioned on the photodetector forming area by a lithography process using a sensitive material as an etching mask; (g) forming p-type electrodes on the p-type InP layer defined on the photodetector forming area and the p-type InGaAs layer in the transistor forming area, respectively; (h) masking the photodetector forming area by lithography process using the sensitive material as an etching mask and removing the p-type InGaAs layer, the p-type InP layer and the etching stopper layer by using the p-type gate electrode as a mask; (i) depositing n-type metal layer on the n-type channel layer and any one of the p-type electrodes and forming an ohmic contact of a source and drain of the photodetector and the transistor; (j) coating a polyimide layer on the entire structure and etching the polyimide layer on the electrode forming portion and photoabsorption portion of the photodetector and the source and drain forming portions of the transistor; forming wiring metal layers on the electrode portions of the photodetector and the source and drain forming portions of the transistor.    USE/ADVANTAGE -   Device has improved receiving sensitivity and operating speed. The device comprises a PIN type photodetector and a junction FET integrated on a single chip for economical and simplified fabrication.