(US5261968-A)      The method involves forming a thick CdS layer, and reducing its effective thickness during regrowth to both form large dia. CdTe crystals and reduce the effective thickness of the CdS layer by diffusion into the CdTe layer such that a majority of sunlight having a wavelength less than 520 nm passes through the CdS layer to the photovoltaic junction. Shorting of individual cells is minimized by providing a conductive layer which is formed from two tin oxide layers, each having dissimilar electrical conductivity.    An electrically-conductive tin-oxide layer interconnects the photovoltaic cells, while the comparatively high resistivity tin oxide layer prevents shorting of a cell. The electron density of the high resistivity tin oxide layer may be adjusted to be within a magnitude of approximately three orders of the presumed electron density of the CdTe layer, such that a energy-producing junction is formed in any area of flaws in the CdS layer by the CdTe layer and tin oxide layer.    ADVANTAGE -   Reduced thickness layer for increased short wavelength light transmissivity. High efficiency. Low cost per output watt photovoltaic panel.    (DE4390168-T)      The method involves forming on a substrate a conductive polycrystalline thin film layer to interconnect photovoltaic cells in the panel. An n-type material is doped so that the carrier density is within three orders of magnitude of that of a selected p-type material.    The doped n-type material is deposited on the substrate to engage the conductive polycrystalline thin film layer and form an n-type transparent polycrystalline thin film layer for the cells. The selected p-type material is deposited on the substrate for engagement with the n-type layer to form a p-type photovoltaic layer.    ADVANTAGE -   Provides high efficiency polycrystalline photovoltaic cell wherein junction is made highly transmissive to short wavelength energy by reducing thickness of n-type material by diffusing or inter-diffusing into or with p-type layer. Method of applying layers renders present invention suitable for spray pyrolysis, dip coating gas deposition and for applying relatively thin polycrystalline layers.    (JP8500210-W)      The method involves forming on a substrate a conductive polycrystalline thin film layer to interconnect photovoltaic cells in the panel. An n-type material is doped so that the carrier density is within three orders of magnitude of that of a selected p-type material.    The doped n-type material is deposited on the substrate to engage the conductive polycrystalline thin film layer and form an n-type transparent polycrystalline thin film layer for the cells. The selected p-type material is deposited on the substrate for engagement with the n-type layer to form a p-type photovoltaic layer.    ADVANTAGE -   Provides high efficiency polycrystalline photovoltaic cell wherein junction is made highly transmissive to short wavelength energy by reducing thickness of n-type material by diffusing or interdiffusing into or with p-type layer. Method of applying layers renders present invention suitable for spray pyrolysis, dip coating gas deposition and for applying relatively thin polycrystalline layers.