(DE4132882-A1)      Prodn. of a p-n CdTe/CdS thin film solar cell involves providing a transparent substrate with a transparent conductive oxide (TCO) layer (front contact) and an n-doped CdS layer, on which is deposited, in an inert gas atmos. by the close space process, a CdTe layer which is provided with a conductive back contact.    The substrate consists of soda-lime glass (window glass); and The substrate is heated to 480-520 deg.C, after provision of the TCO layer and the CdS layer but before depositing the CdTe layer, and is maintained at this temp. during CdTe deposition.    ADVANTAGE -   The process is suitable for inexpensive mass prodn. of satisfactory solar cells having an efficiency of above 10%, without using high substrate temps. (e.g. at least 600 deg.C in prior art)    (US5304499-A)      A pn CdTe/CdS thin film solar cell is mfd. by (a) forming a transparent electroconductive TCO layer and an n-doped CdS layer on a soda-lime glass substrate, (b) heating the CdS layer to 480-500 deg. C, and (c) depositing a CdTe layer in an inert O2-free atmos. is by close-spaced sublimation from a CdTe source. The temp. is maintained during the deposition. Pref. a CdCl2 tempering step is applied after the CdTe layer deposition. The deposition rate of CdTe is 5-15 microns/minute. An electroconductive back contact is provided on the substrate.    ADVANTAGE -   Suitable for mass prodn.. Improved efficiency.    (DE4132882-C2)      Prodn. of a p-n CdTe/CdS thin film solar cell involves providing a transparent substrate with a transparent conductive oxide (TCO) layer (front contact) and an n-doped CdS layer, on which is deposited, in an inert gas atmos. by the close space process, a CdTe layer which is provided with a conductive back contact.    The novelty is that (a) the substrate consists of soda-lime glass (window glass); and (b) the substrate is heated to 480-520 deg.C after provision of the layer (18) and the CdS layer (14) but before depositing the CdTe layer, and is maintained at this temp. during CdTe deposition.    ADVANTAGE -   The process suitable for inexpensive mass prodn. of satisfactory solar cells having an efficiency of above 10%, without using high substrate temps. (e.g. at least 600 deg. C in prior art).