(DE4143083-A1)      The method involves forming grooves (30, 32) on the surface of a semiconductor substrate (12) using mechanical etch methods. A thin layer of oxide (16) is deposited on the surface of the substrate, and removed from the top of the elevations (24, 26, 28).    The deposition of another oxide layer (18) is followed by sputtering of a metal layer (20). The sputtering angle is adjusted so that the metal is deposited only on the top of the elevations (24, 26, 28). The same method or traditional methods are used to form an ohmic back-contact.    ADVANTAGE -   High conversion efficiency due to minimal metal contact and passivation of surface. Reduced production cost due to self-aligned fabrication without mask and photo-lithography.    (DE4143084-A1)      The method involves forming grooves (30, 32) on the surface of a semiconductor substrate (12) using mechanical etch methods. A thin layer of oxide (16) is deposited on the surface of the substrate, and removed from the top of the elevations (24, 26, 28).    The deposition of another oxide layer (18) is followed by sputtering of a metal layer (20). The sputtering angle is adjusted so that the metal is deposited only on the top of the elevations (24, 26, 28). The same method or traditional methods are used to form an ohmic back-contact.    ADVANTAGE -   High conversion efficiency due to minimal metal contact and passivation of surface. Reduced production cost due to self-aligned fabrication without mask and photo-lithography.    (JP6061515-A)      The method involves forming grooves (30, 32) on the surface of a semiconductor substrate (12) using mechanical etch methods. A thin layer of oxide (16) is deposited on the surface of the substrate, and removed from the top of the elevations (24, 26, 28).    The deposition of another oxide layer (18) is followed by sputtering of a metal layer (20). The sputtering angle is adjusted so that the metal is deposited only on the top of the elevations (24, 26, 28). The same method or traditional methods are used to form an ohmic back-contact.    ADVANTAGE -   High conversion efficiency due to minimal metal contact and passivation of surface. Reduced production cost due to self-aligned fabrication without mask and photo-lithography.    (US5356488-A)      The solar cell comprises a semiconductor substrate in which charge carriers can be generated by incident radiation energy. The charge carriers are separable by an electrical field and then conductible via electrically conducting contacts. The solar cell comprises at least one semiconductor substrate surface having elevated areas with flanks. Electrically conducting contacts conduct charge carriers on the semiconductor substrate surface. A passivation layer comprises passivation material covering the semiconductor substrate at least in the area between the contacts.    The elevated areas have regions from which the passivation layer and, optionally semiconductor material, has been removed, the electrically conducting contacts being disposed on the regions and extending over the passivation layer along the flanks. A plateau-like area is provided in the elevated areas, the flanks extending from the plateau-like areas. The semiconductor substrate material or a layer disposed there are provided in the plateau-like areas. The electrically conducting contacts extend over the plateau-like areas and along at least one flank extending from it.    USE -   Semiconductor substrate solar cell which can be of large area, formed by simple processing methods.    (US5449626-A)      I claim:    1. A method for manufacturing a solar cell comprising a semiconductor substrate in which charge carriers can be generated by incident radiation energy and electrically conducting contacts for conducting said charge carriers, comprising the steps of:    forming a plurality of elevated areas on at least one surface of a said semiconductor substrate;    substantially completely covering said at least one semiconductor substrate surface with a passivation layer;    at least partially removing said passivation layer present on said elevated areas; and    forming said electrically conducting contacts indirectly or directly at least on the portions of the elevated areas thus exposed and on portions of said passivation layer located on flanks extending from the elevated areas; wherein    said elevated areas are formed without masking by mechanical removal and/or etching of said semiconductor material and    at least said passivation layer is removed from said elevated areas whereby plateau-like areas are formed, from whose free upper surface the flanks extend and in which semiconductor material is exposed.    (RU2122259-C1)      The method involves forming grooves (30, 32) on the surface of a semiconductor substrate (12) using mechanical etch methods. A thin layer of oxide (16) is deposited on the surface of the substrate, and removed from the top of the elevations (24, 26, 28).    The deposition of another oxide layer (18) is followed by sputtering of a metal layer (20). The sputtering angle is adjusted so that the metal is deposited only on the top of the elevations (24, 26, 28). The same method or traditional methods are used to form an ohmic back-contact.    ADVANTAGE -   High conversion efficiency due to minimal metal contact and passivation of surface. Reduced production cost due to self-aligned fabrication without mask and photo-lithography.