(JP6025838-A)      Transparent conductive film comprising ZnO as the main component and 0.5-12 at% Ga, having a diffraction peak of the (002) face in its X-ray diffraction pattern where the half value width of the diffraction peak of the (002) face is ar t most 0.6 degree.    A sputtering target and a material for vacuum deposition, made of a sintered by of ZnO contg. Ga, where the ratio of integrated intensity I1 of the X-ray diffraction peak of the (002) face of a Ga solid-solubilised ZnO phase shifted towards a high angle side by the solid solubilisation of Ga, to integrated intensity I2 of the X-ray diffraction peak of the (002) face of a ZnO phase at a low angle side having no Ga solid-solubilised, is at least 0.2.    USE/ADVANTAGE -   Gives a high performance, inexpensive transparent conductive film having low resistance and high transmittance and to a target and a material for vacuum deposition that is used for forming the said conductive film. The film is used as a transparent electrode for a display device e.g. a liq. display device or a plasma luminescence device, a transparent electrode for a solar cell, a heat ray reflecting film, or a transparent heater element.    (JP6187833-A)      Transparent, electrically conductive film comprises ZnO as the principal component and contains 0.1-15 (pref. 0.5-12) atomic percent Ga, provided that it yields an X-ray diffraction (XRD) pattern having a peak assigned to the (002) plane with a half band width of 1.2 (pref. 0.6) or less. The film pref. has a resistivity of 10-2 ohm.cm or less and a thickness of 100 angstroms to 5 microns. A heat radiant body comprising a base formed on the transparent electrically conductive film is also claimed.    USE -   Used for e.g. liq. crystal display devices, plasma light-emitting devices, heat reflectors, transparent heat radiant bodies.    (JP6248427-A)      Transparent conductive film comprising ZnO as the main component and 0.5-12 at.% Ga, having a diffraction peak of the (002) face in its X-ray diffraction pattern, where the half value width of the diffraction peak of the (002) face is at most 0.6 degrees.    A sputtering target and a material for vacuum deposition, made of a sintered body of ZnO contg. Ga. where the ratio of integrated intensity I1 of the X-ray diffraction peak of the (002) face of a Ga solid-solubilised ZnO phase shifted towards a high angle side by the solid solubilisation of Ga, to integrated intensity I2 of the X-ray diffraction peak of the (002) face of a ZnO phase at a low angle side having no Ga solid-solubilised, is at least 0.2.    USE/ADVANTAGE -   Gives a high performance, inexpensive transparent conductive film having low resistance and high transmittance, and to a target and a material for vacuum deposition that is used for forming the said conductive film. The film is used as a transparent electrode for a display device e.g. a liq. display device or a plasma luminescence device, a transparent electrode for a solar cell, a heat ray reflecting film, or a transparent heater element.    (US5458753-A)      A transparent conductive film is composed of ZnO contg. 0.5-12 atom% Ga based on the total amt. of Zn + Ga. The half width of the X-ray diffraction peak of the (002) face is at most 0.6 deg.    USE -   As a transparent electrode for a display device such as an LCD or plasma luminescent device, for a solar cell, as a heat reflecting film or as a transparent heater element for automobiles or buildings.    ADVANTAGE -   The film has low resistance and high transmittance even when produced at high speeds, high in quality, inexpensive and does not lose its electrical properties even when subjected to high temps. in an oxidising atmos.