(JP6053137-A)      Forming an amorphous Si hydride film by depositing an amorphous Si hydride film onto a substrate by hf sputtering, comprises: applying a DC or HF bias voltage to at least one of a target composed of a material contg. Si atom and a substrate, with a discharge frequency greater than 50MHz, and using an inert gas contg. H in a controlled amt. greater than 0.1 at.% as an electric discharge gas.    A partial pressure of other gases than the inert gas contg. H is up to 10% - 8 Torr.    USE/ADVANTAGE -   Electronic devices, e.g., electrophotographic photosensitive members, pickup tubes, solid pickup elements, display TFTs, solar cells. Process for depositing a hydrogenated amorphous Si film of good quality, safely, at low cost and with a good reproducibility, with a very low A concn..    (US5723034-A)      Forming an amorphous Si hydride film by depositing an amorphous Si hydride film onto a substrate hy hf sputtering, comprises: applying a DC or HF bias voltage to at least one of a target composed of a material contg. Si atom and a substrate, with a discharge frequency greater than 50MHz, and using an inert gas contg. H in a controlled amt. greater than 0.1at% as an electric discharge gas.    A partial pressure of other gases than the inert gas contg. H is up to 10%-)8 Torr.    USE/ADVANTAGE -   Electronic devices, e.g. electrophotographic photosensitive members, pickup tubes, solid pickup elements, display TFTs, solar cells. Process for depositing a hydrogenated amorphous Si film of good quality, safely, at low cost and with a good reproducibility, with a very low A concn.    (EP582228-B1)      Forming an amorphous Si hydride film by depositing an amorphous Si hydride film onto a substrate hy hf sputtering, comprises: applying a DC or HF bias voltage to at least one of a target composed of a material contg. Si atom and a substrate, with a discharge frequency greater than 50MHz, and using an inert gas contg. H in a controlled amt. greater than 0.1at% as an electric discharge gas.    A partial pressure of other gases than the inert gas contg. H is up to 10%-)8 Torr.    USE/ADVANTAGE -   Electronic devices, e.g. electrophotographic photosensitive members, pickup tubes, solid pickup elements, display TFTs, solar cells. Process for depositing a hydrogenated amorphous Si film of good quality, safely, at low cost and with a good reproducibility, with a very low A concn.