(WO9424696-A1)      A process for making thin-film semiconductor devices, comprises (a) forming a Cu-rich, phase-sepd. cpd. mixt. contg. Cu(In,Ga)Se2:CuxSe on a substrate; and (b) covering CuxSe in the mixt. to Cuw(In,Ga)ySez by exposing the CuxSe to (In,Ga) and Se.    USE -   Used to form semiconductor devices esp. for photovoltaic or solar cell applications.    ADVANTAGE -   The process provides better quality Cu(In,Ga)Se2 thin-films more consistently and more predictably. The films are smooth and require no further processing for photovoltaic response. The ratio of Cu/(In,Ga) does not require precise control during processing. High quality homojunctions can be produced.    (JP8510359-W)      A process for making thin-film semiconductor devices, comprises (a) forming a Cu-rich, phase-sepd. cpd. mixt. contg. Cu(In,Ga)Se2:CuxSe on a substrate; and (b) covering CuxSe in the mixt. to Cuw(In,Ga)ySez by exposing the CuxSe to (In,Ga) and Se.    USE -   Used to form semiconductor devices esp. for photovoltaic or solar cell applications.    ADVANTAGE -   The process provides better quality Cu(In,Ga)Se2 thin-films more consistently and more predictably. The films are smooth and require no further processing for photovoltaic response. The ratio of Cu/(In,Ga) does not require precise control during processing. High quality homojunctions can be produced.    (EP694209-B1)      A process for making thin-film semiconductor devices, comprises (a) forming a Cu-rich, phase-sepd. cpd. mixt. contg. Cu(In,Ga)Se2:CuxSe on a substrate; and (b) covering CuxSe in the mixt. to Cuw(In,Ga)ySez by exposing the CuxSe to (In,Ga) and Se.    USE -   Used to form semiconductor devices esp. for photovoltaic or solar cell applications.    ADVANTAGE -   The process provides better quality Cu(In,Ga)Se2 thin-films more consistently and more predictably. The films are smooth and require no further processing for photovoltaic response. The ratio of Cu/(In,Ga) does not require precise control during processing. High quality homojunctions can be produced.    (JP3130943-B2)      A process for making thin-film semiconductor devices, comprises (a) forming a Cu-rich, phase-sepd. cpd. mixt. contg. Cu(In,Ga)Se2:CuxSe on a substrate; and (b) covering CuxSe in the mixt. to Cuw(In,Ga)ySez by exposing the CuxSe to (In,Ga) and Se.    USE -   Used to form semiconductor devices esp. for photovoltaic or solar cell applications.    ADVANTAGE -   The process provides better quality Cu(In,Ga)Se2 thin-films more consistently and more predictably. The films are smooth and require no further processing for photovoltaic response. The ratio of Cu/(In,Ga) does not require precise control during processing. High quality homojunctions can be produced.