(JP6232429-A)      The photovoltaic element is formed on a suitable substrate (901) on which n type semiconductor layer (902) is formed. The layer (903A) is formed on n type semiconductor layer by chemical vapour deposition method through radio frequency plasma, followed by intrinsic type semiconductor layer (904A) formed by microwave plasma chemical vapour deposition method.    The intrinsic type semiconductor layer (905) is formed by radio frequency plasma chemical vapour deposition method on previously formed intrinsic type semiconductor layer. The p type semiconductor layer (906) is formed by plasma doping on intrinsic type semiconductor layer formed by Radio frequency deposition method. Finally collector electrodes (907) are formed on p type semiconductor layer (906).    ADVANTAGE -   Provides uniform characteristics. Generates device at high speed. Curtails optical deterioration. Delivers high photoelectric efficiency.    (JP6232432-A)      The photovoltaic element is formed on a suitable substrate (901) on which n type semiconductor layer (902) is formed. The layer (903A) is formed on n type semiconductor layer by chemical vapour deposition method through radio frequency plasma, followed by intrinsic type semiconductor layer (904A) formed by microwave plasma chemical vapour deposition method.    The intrinsic type semiconductor layer (905A) is formed by radio frequency plasma chemical vapour deposition method on previously formed intrinsic type semiconductor layer. The p type semiconductor layer (906) is formed by plasma doping on intrinsic type semiconductor layer formed by radio frequency deposition method. Finally collector electrodes (907) are formed on p type semiconductor layer (906).    ADVANTAGE -   Provides uniform characteristics. Generates device at high speed. Curtails optical deterioration. Delivers high photoelectric efficiency.    (JP6232434-A)      The photovoltaic element is formed on a suitable substrate (901) on which n type semiconductor layer (902) is formed. The layer (903A) is formed on n type semiconductor layer by chemical vapour deposition method through radio frequency plasma, followed by intrinsic type semiconductor layer (904A) formed by microwave plasma chemical vapour deposition method.    The intrinsic type semiconductor layer (905A) is formed by radio frequency plasma chemical vapour deposition method on previously formed intrinsic type semiconductor layer. The p type semiconductor layer (906) is formed by plasma doping on intrinsic type semiconductor layer formed by radio frequency deposition method. Finally collector electrodes (907) are formed on p type semiconductor layer (906).    ADVANTAGE -   Provides uniform characteristics. Generates device at high speed. Curtails optical deterioration. Delivers high photoelectric efficiency.    (EP609104-B1)      Appts. for continuous formation of a photo-voltaic element by layered non-mono Si on a belt-like substrate comprises: an unwind chamber; successive deposition chambers for each of the above film layers, the chambers being connected by gas gates; and a wind-up chamber. In a further embodiment, a triple layer tandem photovoltaic element comprises: first-type layer (high frequency CVD); i-layer (microwave CVD); i-layer (high-frequency CVD); second-type layer (plasma doping); first-type layer (high-frequency CVD); i-layer (microwave CVD); i-layer (high-frequency CVD); second-type layer (plasma doping); first-type layer (high-frequency CVD); i-layer (microwave CVD) (I); i-layer (high-frequency CVD); and second-type layer (plasma doping).    Also claimed is where (I) is replaced by a first-type layer (high-frequency CVD). Appts. for continuous mfr. of these elements is also claimed.    USE -   Esp. in mfr. of solar cells.    ADVANTAGE -   Multilayer element is continuously formed with high uniformity over a large area at high reproducibility and a high rate.