(FR2694451-A1)      A photovoltaic cell (1) comprises a substrate (2) with a supporting face (4) over which extends a first electrode (6); a second electrode (10) isolated from the first electrode (6) by layers (14,16;14,24,16) including at least one first layer (14) of a semiconductor material having an active junction (J) at one interface, characterised in that the active junction (J) has an enlarged area which is greater than its projected area.    USE/ADVANTAGE -   The prods. are photovoltaic cells which may be of the metal-semiconductor (MS) junction Schottky diode, metal-insulator-semiconductor (MIS), semiconductor-insulator-semiconductor (SIS) or homo-junction or heterojunction type, which give a high level of conversion of incident light energy into electrical energy per unit of area. The active junction is formed on a surface with a high degree of irregularity which gives a surface area greater than the projected area. This greatly increases the efficiency of collection of incident photons in comparison to prior art cells, due to multiple diffusion of light into the semiconductor layer in association with the large active junction.    (ZA9305284-A)      A photovoltaic cell comprises a substrate having a support face with a first electrode and a second electrode insulated from the first electrode by a number of layers. At least one first layer is of a semiconducting material with an active junction interface. The active junction has a development surface greater than its projected surface.    (JP6511603-W)      A photovoltaic cell (1) comprises a substrate (2) with a supporting face (4) over which extends a first electrode (6); a second electrode (10) isolated from the first electrode (6) by layers (14,16;14,24,16) including at least one first layer (14) of a semiconductor material having an active junction (J) at one interface, characterised in that the active junction (J) has an enlarged area which is greater than its projected area.    USE/ADVANTAGE -   The prods. are photovoltaic cells which may be of the metal-semiconductor (MS) junction Schottky diode, metal-insulator-semiconductor (MIS), semiconductor-insulator-semiconductor (SIS) or homojunction or heterojunction type, which give a high level of conversion of incident light energy into electrical energy per unit of area. The active junction is formed on a surface with a high degree of irregularity which gives a surface area greater than the projected area. This greatly increases the efficiency of collection of incident photons in comparison to prior art cells, due to multiple diffusion of light into the semiconductor layer in association with the large active junction.