(JP6234521-A)      The membrane comprises amorphous oxide of indium, zinc, and the third element of Sn, Al, Sb, Ga, or Ge. In the membrane, atom ratio of In and Zn is In/(In+Zn) is 0.55-0.75. The ratio of the third element to the total content of In, Zn and the third element is up to 20 wt.%.    USE/ADVANTAGE -   The membrane has an improved etching property as compared with ITO membrane. It has the same conductivity as ITO membrane. A transparent, conductive membrane with improved durability is obtd.    (JP6234565-A)      Prodn. comprises mfg. a target contg. In and Zn as the principal components and composed of a sintering comprising a hexagonal layered cpd. expressed by In2O3(ZnO)m (where, M=2 - 20). The process comprises: mixing an In cpd. with a Zn cpd.; calcining the mixt.; and moulding and sintering the calcined prod.    The hexagonal layered cpd. pref. contains 20 atomic% or less of a doped element having a valence of 3 or higher. The target pref. contains In and Zn at an atomic ratio In/(In+Zn) of 0.2 - 0.85.    USE/ADVANTAGE -   Provides a clear electrically conductive film for use as an alternative for an ITO film. It has improved moisture resistance yet retains an electric conductivity and an optical transmittance comparative to hose of an ITO film.    (JP6236710-A)      A material comprises a sintering obtd. from a moulding prepd. from a powder of a hexagonal layered cpd. expressed by In2O3(ZnO)m (m=2-20) or a powder itself, which comprises: preparing a ppte. by reacting a soln. dissolved an In cpd. and a Zn cpd. with a soln. dissolved a ppte. forming agent; filtering the ppte., drying, calcining, crushing, and redn. treating to obtain the powder above, opt. followed by sintering the powder.    USE/ADVANTAGE -   For use as an antistatic agent, an agent for imparting surface conductivity, electrically conductive paints, clear electrodes of display devices, etc.    (JP6236711-A)      Prodn. comprises mfg. a powder comprising a hexagonal layered cpd. expressed by In2O3(ZnO)m (m=2-20) or a sintering obtd. by moulding and sintering the powder, the process comprising: preparing a ppte. from a soln. contg. one or more of an In cpd. and a Zn cpd.; and obtaining a powder by solid-liq. sepn. of the prod. above, followed by calcining and redn. treating the resulting ppte. to obtain an electrically conductive powder.    USE/ADVANTAGE -   For use as an antistatic agent, an agent for imparting surface conductivity, electrically conductive paints, clear electrodes of display devices and the like, etc.    (JP6318406-A)      A transparent conductive film comprises a substantially amorphous oxide contg. In and Zn as the principal cationic element and has an atomic ratio In/(In+Zn) of 0.50-0.90.    In the prepn. of the film, a coating solution, prepared by melting an In-compound and a Zn compound in such a way that the atomic ratio In/(In+Zn) attains a predetermined value, is coated on a substrate, baked at 300-650 deg.C, and then subjected to reducing treatment so as to obtain the transparent conductive film.    When the transparent conductive film is formed by a thermal decomposition method, the atomic ratio of In/(In+Zn) in the film is 0.6-0.8. When the film is formed by a spattering method, the ratio of In(In+Zn) is 0.6-0.90 (pref. 0.8-0.90).    USE/ADVANTAGE -   The transparent conductive base material such as a film or a glass is useful as the main material for transparent electrodes in liq. crystal displays, for electroluminescence elements and for solar batteries. It is also useful as an anti-static electricity film or as a defrosting heater on windows. It is used as material for conductive paint and conductive ink etc. The film has reasonable transparency and conductivity and excellent etching properties and resistance against moisture and heat.    (JP2695605-B2)      A transparent conductive film comprises a substantially amorphous oxide contg. In and Zn as the principal cationic element and has an atomic ratio In/(In+Zn) of 0.50-0.90.    In the prepn. of the film, a coating solution, prepared by melting an In-compound and a Zn compound in such a way that the atomic ratio In/(In+Zn) attains a predetermined value, is coated on a substrate, baked at 300-650 deg.C, and then subjected to reducing treatment so as to obtain the transparent conductive film.    When the transparent conductive film is formed by a thermal decomposition method, the atomic ratio of In/(In+Zn) in the film is 0.6-0.8. When the film is formed by a spattering method, the ratio of In(In+Zn) is 0.6-0.90 (pref. 0.8-0.90).    USE/ADVANTAGE -   The transparent conductive base material such as a film or a glass is useful as the main material for transparent electrodes in liq. crystal displays, for electroluminescence elements and for solar batteries. It is also useful as an anti-static electricity film or as a defrosting heater on windows. It is used as material for conductive paint and conductive ink etc. The film has reasonable transparency and conductivity and excellent etching properties and resistance against moisture and heat.    (US5972527-A)      A transparent conductive film comprises a substantially amorphous oxide contg. In and Zn as the principal cationic element and has an atomic ratio In/(In+Zn) of 0.50-0.90.    In the prepn. of the film, a coating solution, prepared by melting an In-compound and a Zn compound in such a way that the atomic ratio In/(In+Zn) attains a predetermined value, is coated on a substrate, baked at 300-650 deg.C, and then subjected to reducing treatment so as to obtain the transparent conductive film.    When the transparent conductive film is formed by a thermal decomposition method, the atomic ratio of In/(In+Zn) in the film is 0.6-0.8. When the film is formed by a spattering method, the ratio of In(In+Zn) is 0.6-0.90 (pref. 0.8-0.90).    USE/ADVANTAGE -   The transparent conductive base material such as a film or a glass is useful as the main material for transparent electrodes in liq. crystal displays, for electroluminescence elements and for solar batteries. It is also useful as an anti-static electricity film or as a defrosting heater on windows. It is used as material for conductive paint and conductive ink etc. The film has reasonable transparency and conductivity and excellent etching properties and resistance against moisture and heat.    (EP677593-B1)      A transparent conductive film comprises a substantially amorphous oxide contg. In and Zn as the principal cationic element and has an atomic ratio In/(In+Zn) of 0.50-0.90.    In the prepn. of the film, a coating solution, prepared by melting an In-compound and a Zn compound in such a way that the atomic ratio In/(In+Zn) attains a predetermined value, is coated on a substrate, baked at 300-650 deg.C, and then subjected to reducing treatment so as to obtain the transparent conductive film.    When the transparent conductive film is formed by a thermal decomposition method, the atomic ratio of In/(In+Zn) in the film is 0.6-0.8. When the film is formed by a spattering method, the ratio of In(In+Zn) is 0.6-0.90 (pref. 0.8-0.90).    USE/ADVANTAGE -   The transparent conductive base material such as a film or a glass is useful as the main material for transparent electrodes in liq. crystal displays, for electroluminescence elements and for solar batteries. It is also useful as an anti-static electricity film or as a defrosting heater on windows. It is used as material for conductive paint and conductive ink etc. The film has reasonable transparency and conductivity and excellent etching properties and resistance against moisture and heat.