(JP8508968-W)      H2 stream contg. (a) more easily removable impurities such as CO and/or CO2 and (b) N2 and/or CH4 as more difficult to remove impurities is first contacted at 5-50C with bed(s) of particulate Ni and/or Ni cpds. with at least 1 wt.% of the Ni present in reduced form to remove the impurities in (a), then contacted with a bed(s) of non-evaporable getter material at a higher temp. to remove impurities in (b).    Appts. for the purificn. is further claimed.    USE -   Used to obtain H2 streams contg. below 20 ppb CH4 for use in the semiconductor industry.    ADVANTAGE -   No new CH4 forms during purificn.. Prior art diffusion of stream through Pd or its alloys is avoided. Process is free from high pressure drops and is long term.    (RU2123971-C1)      H2 stream contg. (a) more easily removable impurities such as CO and/or CO2 and (b) N2 and/or CH4 as more difficult to remove impurities is first contacted at 5-50C with bed(s) of particulate Ni and/or Ni cpds. with at least 1 wt.% of the Ni present in reduced form to remove the impurities in (a), then contacted with a bed(s) of non-evaporable getter material at a higher temp. to remove impurities in (b).    Appts. for the purificn. is further claimed.    USE -   Used to obtain H2 streams contg. below 20 ppb CH4 for use in the semiconductor industry.    ADVANTAGE -   No new CH4 forms during purificn.. Prior art diffusion of stream through Pd or its alloys is avoided. Process is free from high pressure drops and is long term.    (JP3094235-B2)      H2 stream contg. (a) more easily removable impurities such as CO and/or CO2 and (b) N2 and/or CH4 as more difficult to remove impurities is first contacted at 5-50C with bed(s) of particulate Ni and/or Ni cpds. with at least 1 wt.% of the Ni present in reduced form to remove the impurities in (a), then contacted with a bed(s) of non-evaporable getter material at a higher temp. to remove impurities in (b).    Appts. for the purificn. is further claimed.    USE -   Used to obtain H2 streams contg. below 20 ppb CH4 for use in the semiconductor industry.    ADVANTAGE -   No new CH4 forms during purificn.. Prior art diffusion of stream through Pd or its alloys is avoided. Process is free from high pressure drops and is long term.