(JP7193152-A)      The method involves formation of a non-volatile memory on a substrate (41). A transistor (42) is formed on the substrate surface. A dielectric film (49) is formed on the internal wiring (48) of the transistor. An upper electrode (50) is formed on the surface of the dielectric film. The dielectric film is constituted by a single crystal film.    ADVANTAGE -   Promotes miniaturisation by thickness reduction. Maintains stability of device characteristics. Improves electrical property of memory element. Improves data writing efficiency. Forms single crystal film at low temperature. Simplifies mfg process. Improves crystallinity.    (JP7193254-A)      The semiconductor device is formed on a semiconductor substrate (51). The source and drain (56,57) are formed at the respective domains. The channel (53) is formed between the source and drain. The channel contains amorphous or polycrystalline film. Highly directive Ne atoms are irradiated into the channel region to convert the channel layer into single crystalline structure. The gate insulation film (54) is formed next. Then, the gate (55) is formed.    ADVANTAGE -   Prevents generation of leakage current. Improves insulating film breakdown voltage. Simplifies etching work. Increases reliability.    (JP7241088-A)      The micromachine has a member in which at least part of the member is separated from a base material. Prodn. of the micromachine comprises: (a) forming a sacrifice layer on a base material; (b) forming a predetermined material layer for composing the above-mentioned member on the sacrifice layer; (c) in the middle of the (b) process, or after the (b) process, irradiating low energy gas beams inviting no sputtering to the above-mentioned predetermined material at the predetermined material layer from the direction perpendicular to the closest crystal planes having different directions in a forming single crystal layer at temps. lower than the crystallisation temp. of the above mentioned predetermined material. The result transfers the predetermined material layer into a single crystal layer; (d) removing the sacrifice layer.    USE/ADVANTAGE -   The method produces the micromachine having complicate members, including a diaphragm consisting of a single crystal material. More partic., the method produces the micromachine having the single crystal layer at the member in which at least part of the member is separated from the base material, including a beam, crosslinking, diaphragm, moving part, hollow container, or fluid passage. The member separated from the base material has high strength, less abrasion high elastic limit, superior corrosion resistance, high uniform properties. The member having the single crystal layer is formed on the base material without joining or integration. The micromachine having high accuracy is readily produced.    (JP7273232-A)      The mfg method arranges two or more second substrates (33) in parallel with a first substrate (31). A first diffusion domain is formed by the upper part of each second substrate, at a selected target. An active region is formed between the first and second diffusion domains. A gate insulating film (34) is formed at the upper face of active region.    A gate electrode (35) is formed on the upper face of gate insulating film. The gate insulating film is constituted by a single crystal film which consists of ferroelectric substance.    ADVANTAGE -   Improves integration density and polarization characteristics. Prevents deterioration. Reduces defect in crystal structure. Reduces leakage of current. Improves electrical property of semiconductor device. Facilitates erasure of information in non-volatile memory.    (JP7239482-A)      The layer of material is irradiated with gas beams, which may be ion or atomic currents or molecular beams, of low energy levels causing no sputtering of the material from directions perpendicular to the densest crystal planes at an optimum temp. below a crystallisation temp. so as to convert the layer to a thin single crystal or polycrystal layer. The structure contg. the layer is then further processed to form the desired device.    USE -   An mfr. of a micromachine, solar cell, (non) volatile memory, a load of a SRAM memory cell, a TFT, an insulated gate device or an active matrix LCD (all claimed).    ADVANTAGE -   Single and poly crystal thin layers can be formed easily and accurately with uniform thickness for use in complex structures, eg. the diaphragm of a micro-machine.    (US5738731-A)      The layer of material is irradiated with gas beams, which may be ion or atomic currents or molecular beams, of low energy levels causing no sputtering of the material from directions perpendicular to the densest crystal planes at an optimum temp. below a crystallisation temp. so as to convert the layer to a thin single crystal or polycrystal layer. The structure contg. the layer is then further processed to form the desired device.    USE -   An mfr. of a micromachine, solar cell, (non) volatile memory, a load of a SRAM memory cell, a TFT, an insulated gate device or an active matrix LCD (all claimed).    ADVANTAGE -   Single and poly crystal thin layers can be formed easily and accurately with uniform thickness for use in complex structures, eg. the diaphragm of a micro-machine.    (US6025252-A)      The layer of material is irradiated with gas beams, which may be ion or atomic currents or molecular beams, of low energy levels causing no sputtering of the material from directions perpendicular to the densest crystal planes at an optimum temp. below a crystallisation temp. so as to convert the layer to a thin single crystal or polycrystal layer. The structure contg. the layer is then further processed to form the desired device.    USE -   An mfr. of a micromachine, solar cell, (non) volatile memory, a load of a SRAM memory cell, a TFT, an insulated gate device or an active matrix LCD (all claimed).    ADVANTAGE -   Single and poly crystal thin layers can be formed easily and accurately with uniform thickness for use in complex structures, eg. the diaphragm of a micro-machine.    (US6106734-A)      The layer of material is irradiated with gas beams, which may be ion or atomic currents or molecular beams, of low energy levels causing no sputtering of the material from directions perpendicular to the densest crystal planes at an optimum temp. below a crystallisation temp. so as to convert the layer to a thin single crystal or polycrystal layer. The structure contg. the layer is then further processed to form the desired device.    USE -   An mfr. of a micromachine, solar cell, (non) volatile memory, a load of a SRAM memory cell, a TFT, an insulated gate device or an active matrix LCD (all claimed).    ADVANTAGE -   Single and poly crystal thin layers can be formed easily and accurately with uniform thickness for use in complex structures, eg. the diaphragm of a micro-machine.    (US6137120-A)      The layer of material is irradiated with gas beams, which may be ion or atomic currents or molecular beams, of low energy levels causing no sputtering of the material from directions perpendicular to the densest crystal planes at an optimum temp. below a crystallisation temp. so as to convert the layer to a thin single crystal or polycrystal layer. The structure contg. the layer is then further processed to form the desired device.    USE -   An mfr. of a micromachine, solar cell, (non) volatile memory, a load of a SRAM memory cell, a TFT, an insulated gate device or an active matrix LCD (all claimed).    ADVANTAGE -   Single and poly crystal thin layers can be formed easily and accurately with uniform thickness for use in complex structures, eg. the diaphragm of a micro-machine.    (US6177706-B1)      The layer of material is irradiated with gas beams, which may be ion or atomic currents or molecular beams, of low energy levels causing no sputtering of the material from directions perpendicular to the densest crystal planes at an optimum temp. below a crystallisation temp. so as to convert the layer to a thin single crystal or polycrystal layer. The structure contg. the layer is then further processed to form the desired device.    USE -   An mfr. of a micromachine, solar cell, (non) volatile memory, a load of a SRAM memory cell, a TFT, an insulated gate device or an active matrix LCD (all claimed).    ADVANTAGE -   Single and poly crystal thin layers can be formed easily and accurately with uniform thickness for use in complex structures, eg. the diaphragm of a micro-machine.    (US6225668-B1)      The layer of material is irradiated with gas beams, which may be ion or atomic currents or molecular beams, of low energy levels causing no sputtering of the material from directions perpendicular to the densest crystal planes at an optimum temp. below a crystallisation temp. so as to convert the layer to a thin single crystal or polycrystal layer. The structure contg. the layer is then further processed to form the desired device.    USE -   An mfr. of a micromachine, solar cell, (non) volatile memory, a load of a SRAM memory cell, a TFT, an insulated gate device or an active matrix LCD (all claimed).    ADVANTAGE -   Single and poly crystal thin layers can be formed easily and accurately with uniform thickness for use in complex structures, eg. the diaphragm of a micro-machine.