EP675551-A2  Morikawa, Matsuno, Itagaki, Sasaki, and Kumabe; Extended Abstracts for Academic Lecture 18a-SK-11, p.672 (The 53 Autumn Meeting, 1992); The Japan Society of Applied Physics;  IBM TECHNICAL DISCLOSURE BULLETIN, vol. 33, no. 7, 1 December 1990, pages 407-409, XP000108503 "PROCESS TO INHIBIT RECRYSTALLIZATION OF N- C-SI:H DURING RAPID THERMAL ANNEALING";  PATENT ABSTRACTS OF JAPAN vol. 016, no. 401 (E-1253), 25 August 1992 & JP 04 133356 A (SEMICONDUCTOR ENERGY LAB CO LTD), 7 May 1992,;  PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE, LOUISVILLE, MAY 10 - 14, 1993, no. CONF. 23, 10 May 1993, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 356-359, XP000437969 WAGNER B F ET AL: "15.9% EFFICIENCY FOR SI THIN FILM CONCENTRATOR SOLAR CELL GROWN BY LPE"US5584941-A  Extended Abstracts for Academic Lecture 18a-SK-11, p. 672 (The 53 Autumn Meeting, 1992); The Japan Society of Applied Physics by Morikawa, Matsuno, Itagaki, Sasaki, and Kumabe.EP675551-A3  WAGNER B F ET AL: "15.9% EFFICIENCY FOR SI THIN FILM CONCENTRATOR SOLAR CELL GROWN BY LPE", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE, LOUISVILLE, MAY 10 - 14, 1993, no. CONF. 23, 10 May 1993 (1993-05-10), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 356 - 359, XP000437969,relevantClaims[1,11,14,15,20,42,43],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;&lt;figure&gt;2&lt;/figure&gt;|&lt;pp&gt;357&lt;/pp&gt;&lt;column&gt;1&lt;/column&gt;&lt;line&gt;17&lt;/line&gt;&lt;ppl&gt;358&lt;/ppl&gt;&lt;coll&gt;1&lt;/coll&gt;&lt;linel&gt;6&lt;/linel&gt;];  "PROCESS TO INHIBIT RECRYSTALLIZATION OF N- C-SI:H DURING RAPID THERMAL ANNEALING", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 33, no. 7, 1 December 1990 (1990-12-01), pages 407 - 409, XP000108503,relevantClaims[14,42,43],relevantPassages[&lt;pp&gt;W&lt;/pp&gt;];  PATENT ABSTRACTS OF JAPAN vol. 016, no. 401 (E - 1253) 25 August 1992 (1992-08-25),relevantClaims[1,14],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;]EP675551-B1  IBM TECHNICAL DISCLOSURE BULLETIN, vol. 33, no. 7, 1 December 1990, pages 407-409, XP000108503 "PROCESS TO INHIBIT RECRYSTALLIZATION OF N- C-SI:H DURING RAPID THERMAL ANNEALING";  PATENT ABSTRACTS OF JAPAN vol. 016, no. 401 (E-1253), 25 August 1992 & JP 04 133356 A (SEMICONDUCTOR ENERGY LAB CO LTD), 7 May 1992,;  PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE, LOUISVILLE, MAY 10 - 14, 1993, no. CONF. 23, 10 May 1993, INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 356-359, XP000437969 WAGNER B F ET AL: "15.9% EFFICIENCY FOR SI THIN FILM CONCENTRATOR SOLAR CELL GROWN BY LPE"