(FR2721754-A1)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).    (DE19581590-T)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).    (JP9512665-W)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).    (GB2319662-A)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).    (GB2301939-B)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).    (GB2319662-B)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).    (US5942049-A)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).    (CN1144573-A)      The stability of amorphous Si devices is improved by forming the Si by PECVD at 80-250C and pressure at least 0.5 torr.    Also claimed is a process for substantially preventing light induced degradation of a solar cell after exposure to light.    Also claimed is a process for the prodn. of a solar cell with an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a process for the fabrication of a solar cell.    Also claimed is a solar cell with a region comprising amorphous silicon and having an open circuit voltage greater than 0.9 V and a fill factor greater than 0.7.    Also claimed is a solar cell comprising a rapidly light-saturatable amorphous silicon-contg. region.    USE -   Used esp. in the mfr. of photovoltaic devices, solar cells, panels and roofs and glass panes with an amorphous Si reflective coating, in which the increased stability reduces light-induced degradation (claimed). Also used in TFTs, semiconductors, diodes, televisions, computer displays, matrix address arrays, image sensors, LCDs, X-ray imagers, photo-receptors, photocopiers, optical scanners facsimile machines, laser printers, optical detectors and photodetectors in which the increased stability reduces current-induced degradation (claimed).