(WO9509440-A1)      Metallisation of crystalline silicon solar cells involves: (a) preparing a crystalline silicon solar cell body (1) with a planar n-doped region near the front face of the body; (b) producing a dielectric on the front face; (c) producing a back face metallisation by application and firing of a conductive paste; (d) applying at least the bus structure for the front face metallisation by a thick film technique; and (e) depositing Ag or Cu by photoinduced electroless deposition onto the front face at least over the thick film structure using the fired conductive paste on the back face as sacrificial anode.    ADVANTAGE -   The process is simple, does not require electroplating and thus electrical contacting, is compatible with front and back face metallisation, and produces electroconductive adherent contacts at conductor line widths of less than 100 m.    (JP9503345-W)      Metallisation of crystalline silicon solar cells involves: (a) preparing a crystalline silicon solar cell body (1) with a planar n-doped region near the front face of the body; (b) producing a dielectric on the front face; (c) producing a back face metallisation by application and firing of a conductive paste; (d) applying at least the bus structure (10) for the front face metallisation by a thick film technique; and (e) depositing Ag or Cu (11,12) by photoinduced electroless deposition onto the front face at least over the thick film structure (10) using the fired conductive paste on the back face as sacrificial anode.    ADVANTAGE -   The process is simple, does not require electroplating and thus electrical contacting, is compatible with front and back face metallisation, and produces electroconductive adherent contacts at conductor line widths of less than 100 m.    (US5882435-A)      Metallisation of crystalline silicon solar cells involves: (a) preparing a crystalline silicon solar cell body (1) with a planar n-doped region near the front face of the body; (b) producing a dielectric on the front face; (c) producing a back face metallisation by application and firing of a conductive paste; (d) applying at least the bus structure (10) for the front face metallisation by a thick film technique; and (e) depositing Ag or Cu (11,12) by photoinduced electroless deposition onto the front face at least over the thick film structure (10) using the fired conductive paste on the back face as sacrificial anode.    ADVANTAGE -   The process is simple, does not require electroplating and thus electrical contacting, is compatible with front and back face metallisation, and produces electroconductive adherent contacts at conductor line widths of less than 100 m.