(JP7169987-A)      The method of preparing a module involves depositing one or more silicon wafers on a support substrate. The wafers are of surface area up to 0.5 mm squared, and thickness between 100 and 500 micrometres, and are doped with suitable impurities. The support is heat resistant. A doping paste is deposited on the wafers by a silk screening process.    The doping agent is diffused by heating. Contacts are formed on front and rear parts of an active element. Contacts are formed on the rear protection glass. The glass is then applied. The active elements are interconnected and an antireflection layer is deposited. The module is then encapsulated.    USE/ADVANTAGE -   For generating electrical energy. Improved conversion efficiency. Faster industrial production due to reduced sheet thickness and larger areas.    (US5504015-A)      A method of preparing photovoltaic modules based on mono and polycrystalline silicon, wherein the silicon is in the form of a supported large-area thin layer, said method comprising the steps of: (a) placing at least one silicon wafer having a surface area less than or equal to 0.5 m2 and a thickness between 100 and 500 m and doped with electrically active impurities, on a support substrate consisting of a heat-resistant material and having at least one recess each comprising at least one hole which passes through said support substrate; (a-1) adhering said support substrate to an evacuable support via a gasket; (a-2) adhering said at least one silicon wafer to said support substrate by applying vacuum to said at least one recess through said evacuable support; (b) depositing a dopant containing paste on said at least one silicon wafer via a silk screen process; (c) diffusing the dopant by heating said support substrate and said at least one silicon wafer to a temperature between 900 and 1000 C., to thereby create a diffused layer; (d) defining the surface areas of a plurality of unit photo active elements by cutting said diffused layer; (e) forming contacts on the front and rear of each unit photo active element; (f) forming contacts on a rear protection glass and applying the rear protection glass to the rear of said active elements; (f-1) releasing the vacuum from said evacuable support; (g) interconnecting the photo active elements; (h) depositing an anti-reflecting layer on the front of the photo voltaic module; and (i) encapsulating said photo voltaic module.