(JP8236521-A)      Formation of a fluorine-contg. silicon oxide film on a substrate comprises plasma-enhanced chemical vapour deposition using a fluorinated silicon source. R1-R6 = F and remaining R = H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl aryl or benzylic gps., or CxH2x when R1, R2 and/or R3 is connected to R4, R5 or R6 by bridging gp. CyH2y; x = 1-6; y = 0-6; M = Si or C; n = 0-6; R7 = H, F, CzH2z+1 or CrHsFt; z = 1-6; r = 1-6; s = (2r+1-t); and t = 1-(2r+1).    Also claimed are: (a) a fluorine-contg. silicon oxide film supported on a substrate comprising SiOpFq, p = 2-q; and q = 0.03-0.6; (b) the compsn. of matter comprising F2Si(CH3)CH2CH2Si(CH3)F2; (c) the compsn. of matter comprising F3SiCH2CH2CH2CH(SiF3)C2H5; and (d) a process for forming a fluorine-contg. silicon oxide film on a substrate.    USE -   Used for forming fluorine-contg. silicon oxide films on electronic material substrates requiring a barrier layer e.g. silicon oxides, silicon dioxide, intermetallic layers, titanium nitride and silicon nitride, polysilicon and metal layers, used in semiconductor devices and solar cell mfr.    ADVANTAGE -   Lower dielectric constants are obtd. c.f. pure silicon dioxide by controlling the fluorine content of the films and the dielectric constant. The high vapour pressure fluorinated alkylsilanes are easily delivered into a CVD reactor. The optimum quality of oxide and deposition rates and temps. is obtd., with less hazardous liq. c.f. silicon tetrafluoride compressed gas.    (JP2790439-B2)      Formation of a fluorine-contg. silicon oxide film on a substrate comprises plasma-enhanced chemical vapour deposition using a fluorinated silicon source of formula (I). R1-R6 = F and remaining R = H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl aryl or benzylic gps., or CxH2x when R1, R2 and/or R3 is connected to R4, R5 or R6 by bridging gp. CyH2y; x = 1-6; y = 0-6; M = Si or C; n = 0-6; R7 = H, F, CzH2z+1 or CrHsFt; z = 1-6; r = 1-6; s = (2r+1-t); and t = 1-(2r+1).    Also claimed are: (a) a fluorine-contg. silicon oxide film supported on a substrate comprising SiOpFq, p = 2-q; and q = 0.03-0.6; (b) the compsn. of matter comprising F2Si(CH3)CH2CH2Si(CH3)F2; (c) the compsn. of matter comprising F3SiCH2CH2CH2CH(SiF3)C2H5; and (d) a process for forming a fluorine-contg. silicon oxide film on a substrate.    USE -   Used for forming fluorine-contg. silicon oxide films on electronic material substrates requiring a barrier layer e.g. silicon oxides, silicon dioxide, intermetallic layers, titanium nitride and silicon nitride, polysilicon and metal layers, used in semiconductor devices and solar cell mfr.    ADVANTAGE -   Lower dielectric constants are obtd. c.f. pure silicon dioxide by controlling the fluorine content of the films and the dielectric constant. The high vapour pressure fluorinated alkylsilanes are easily delivered into a CVD reactor. The optimum quality of oxide and deposition rates and temps. is obtd., with less hazardous liq. c.f. silicon tetrafluoride compressed gas.