(DE4432729-C1)      Gas sensor has two adjacent electrode structures (11,12) on a substrate (S), one electrode structure (11) surrounded by a n-type semiconductor-contg. gas sensitive arrangement (GS) having a gas- and temp.-dependent resistance and the other electrode structure (12) surrounded by a gas insensitive arrangement (NGS) which contains n-type and p-type semiconductors and which has a resistance dependent only on temp.    USE -   Used at 600-850 C for detecting reducing gases or at 950 C for detecting oxygen (claimed), e.g. for methane or carbon mon:oxide alarm equipment, small furnaces or combustion regulation.    ADVANTAGE -   The NGS arrangement reduces the effects of temp. fluctuations, resistance drift (resulting from ageing), prodn. process fluctuations and interactions between the GS arrangement and the substrate.    (JP10505164-W)      Gas sensor has two adjacent electrode structures (11,12) on a substrate (S), one electrode structure (11) surrounded by a n-type semiconductor-contg. gas sensitive arrangement (GS) having a gas- and temp.-dependent resistance and the other electrode structure (12) surrounded by a gas insensitive arrangement (NGS) which contains n-type and p-type semiconductors and which has a resistance dependent only on temp.    USE -   Used at 600-850 C for detecting reducing gases or at 950 C for detecting oxygen (claimed), e.g. for methane or carbon mon:oxide alarm equipment, small furnaces or combustion regulation.    ADVANTAGE -   The NGS arrangement reduces the effects of temp. fluctuations, resistance drift (resulting from ageing), prodn. process fluctuations and interactions between the GS arrangement and the substrate.    (EP781408-B1)      Gas sensor has two adjacent electrode structures (11,12) on a substrate (S), one electrode structure (11) surrounded by a n-type semiconductor-contg. gas sensitive arrangement (GS) having a gas- and temp.-dependent resistance and the other electrode structure (12) surrounded by a gas insensitive arrangement (NGS) which contains n-type and p-type semiconductors and which has a resistance dependent only on temp.    USE -   Used at 600-850 C for detecting reducing gases or at 950 C for detecting oxygen (claimed), e.g. for methane or carbon mon:oxide alarm equipment, small furnaces or combustion regulation.    ADVANTAGE -   The NGS arrangement reduces the effects of temp. fluctuations, resistance drift (resulting from ageing), prodn. process fluctuations and interactions between the GS arrangement and the substrate.    (US5824271-A)      Gas sensor has two adjacent electrode structures (11,12) on a substrate (S), one electrode structure (11) surrounded by a n-type semiconductor-contg. gas sensitive arrangement (GS) having a gas- and temp.-dependent resistance and the other electrode structure (12) surrounded by a gas insensitive arrangement (NGS) which contains n-type and p-type semiconductors and which has a resistance dependent only on temp.    USE -   Used at 600-850 C for detecting reducing gases or at 950 C for detecting oxygen (claimed), e.g. for methane or carbon mon:oxide alarm equipment, small furnaces or combustion regulation.    ADVANTAGE -   The NGS arrangement reduces the effects of temp. fluctuations, resistance drift (resulting from ageing), prodn. process fluctuations and interactions between the GS arrangement and the substrate.