(DE19546418-A1)      The generator produces an out put sufficient to turn on a MOS-gated device which consists of several planar photogenerators connected in series. Each of the photovoltaic generators is contained in its own respective insulated tub. The insulated tubs are formed by wafer bonding a junction-contg. wafer (11) to a handle wafer (10) with a dielectric isolation layer (12) between them.    The individual tubs are formed at their sides by isolation trenches (40) which enclose each tub and extend to the dielectric layer (12) between the junction-contg. and handle wafers. Each tub is formed of an N-body with a shallow diffusion (20,21,22) N+ contact regions (25,26,27) are formed in the N body and contact strips (70,71) connect the devices of each of the tubs in series by connecting the P+ diffusion of one tub to the N+ contact of an adjacent tub.    USE/ADVANTAGE -   For controlling semiconductor switching device.    (FR2729504-A1)      The generator produces an out put sufficient to turn on a MOS-gated device which consists of several planar photogenerators connected in series. Each of the photovoltaic generators is contained in its own respective insulated tub. The insulated tubs are formed by wafer bonding a junction-contg. wafer (11) to a handle wafer (10) with a dielectric isolation layer (12) between them.    The individual tubs are formed at their sides by isolation trenches (40) which enclose each tub and extend to the dielectric layer (12) between the junction-contg. and handle wafers. Each tub is formed of an N-body with a shallow diffusion (20,21,22) N+ contact regions (25,26,27) are formed in the N body and contact strips (70,71) connect the devices of each of the tubs in series by connecting the P+ diffusion of one tub to the N+ contact of an adjacent tub.    USE/ADVANTAGE -   For controlling semiconductor switching device.    (JP8250761-A)      The generator produces an out put sufficient to turn on a MOS-gated device which consists of several planar photogenerators connected in series. Each of the photovoltaic generators is contained in its own respective insulated tub. The insulated tubs are formed by wafer bonding a junction-contg. wafer (11) to a handle wafer (10) with a dielectric isolation layer (12) between them.    The individual tubs are formed at their sides by isolation trenches (40) which enclose each tub and extend to the dielectric layer (12) between the junction-contg. and handle wafers. Each tub is formed of an N-body with a shallow diffusion (20,21,22) N+ contact regions (25,26,27) are formed in the N body and contact strips (70,71) connect the devices of each of the tubs in series by connecting the P+ diffusion of one tub to the N+ contact of an adjacent tub.    USE/ADVANTAGE -   For controlling semiconductor switching device.    (GB2296993-B)      The generator produces an out put sufficient to turn on a MOS-gated device which consists of several planar photogenerators connected in series. Each of the photovoltaic generators is contained in its own respective insulated tub. The insulated tubs are formed by wafer bonding a junction-contg. wafer (11) to a handle wafer (10) with a dielectric isolation layer (12) between them.    The individual tubs are formed at their sides by isolation trenches (40) which enclose each tub and extend to the dielectric layer (12) between the junction-contg. and handle wafers. Each tub is formed of an N-body with a shallow diffusion (20,21,22) N+ contact regions (25,26,27) are formed in the N body and contact strips (70,71) connect the devices of each of the tubs in series by connecting the P+ diffusion of one tub to the N+ contact of an adjacent tub.    USE/ADVANTAGE -   For controlling semiconductor switching device.