(US5510007-A)      A process for fabrication of an article having at least one article region including elemental silicon, a silicon alloy, or a silicon compound, the process comprising:    generating a silane by electrochemical reaction of a solid precursor material including silicon in an electrochemical cell which generates H+ species, the generated H+ species reacting with silicon from the precursor material to form a silane,    using the silane to deposit an article region which includes elemental silicon, a silicon alloy, or a silicon compound.    (JP8081795-A)      Electrochemical prepn. for silane comprises: (a) applying an electrochemical reaction to a precursor contg. silicon in an electrochemical cell for preparing an H+ seed; (b) reacting the prepared H+ seed with silicon obtd. from the precursor to form silane; and (c) depositing a prodn. region contg. element silicon, a silicon alloy, or a silicon cpd. using the prepared silane.    USE -   The electrochemical prepn. is applied to the silane used as a precursor gas for depositing silicon, or a silicon-contg. cpd. used in producing a semiconductor device.    ADVANTAGE -   The process prepares the silane at the site for producing the semiconductor device. The result requires no continuous silane storage or silane transportation. The silane is supplied upon request. No counter measure against safety is required since no transportation is required to the silane.    (EP704553-B1)      Article having a region formed of Si(alloy or cpd.), is mfd. by: generating a silane in a cell using Si (precursor) and H+ species generated by the cell; and using the resulting silane to deposit the Si material. A pref. Si precursor is a silicide, esp.Mg silicide.     Also claimed is appts. for mfr. of device or article as above which includes a deposition chamber (20), silane generating cell (60), and a gas line (40) supplying the silane from the cell to the chamber. The electrochemical cell includes a first electrode (62) for generating supply of H+ions, a silicon contg. precursor in contact with a first electrode, a second electrode, and a receptacle for retaining an electrolyte.    USE -   The articles mfd. by the above process are used in semiconductor, waveguide or photoconductive devices.    ADVANTAGE -   Method and appts. avoid need for long-term storage and transport of silane gas.