(JP8316230-A)      Precursor for mfr of a semiconductor thin film is an oxide film of a dopant of IA, IIA. IIB, VA or VB metal and IB and IIIA metals as main components. The dopant may have a graded concn across the film thickness. The precursor may comprise two or more oxide films in which the dopant concns are different; or the precursor may comprise alternative IB-IIIA oxide films and dopant oxide films.    Method for mfg a semiconductor thin film having a chalcopyrite structure comprises heating the above precursor films in an atmos contg a VIA element. In a typical process, a doped CuInO precursor film is heated in H2Se to form a doped CuInSe semiconductor film.    USE -   Semiconductor films are esp useful as absorber films in solar cells. (claimed).    ADVANTAGE -   Chalcopyrite structure semiconductor film prod has high energy and uniform efficiency when used as a photoabsorptive layer.    (JP9055378-A)      Precursor for mfr of a semiconductor thin film is an oxide film of a dopant of IA, IIA. IIB, VA or VB metal and IB and IIIA metals as main components. The dopant may have a graded concn across the film thickness. The precursor may comprise two or more oxide films in which the dopant concns are different; or the precursor may comprise alternative IB-IIIA oxide films and dopant oxide films.    Method for mfg a semiconductor thin film having a chalcopyrite structure comprises heating the above precursor films in an atmos contg a VIA element. In a typical process, a doped CuInO precursor film is heated in H2Se to form a doped CuInSe semiconductor film.    USE -   Semiconductor films are esp useful as absorber films in solar cells. (claimed).    ADVANTAGE -   Chalcopyrite structure semiconductor film prod has high energy and uniform efficiency when used as a photoabsorptive layer.    (US5728231-A)      Precursor for mfr of a semiconductor thin film is an oxide film of a dopant of IA, IIA. IIB, VA or VB metal and IB and IIIA metals as main components. The dopant may have a graded concn across the film thickness. The precursor may comprise two or more oxide films in which the dopant concns are different; or the precursor may comprise alternative IB-IIIA oxide films and dopant oxide films.    Method for mfg a semiconductor thin film having a chalcopyrite structure comprises heating the above precursor films in an atmos contg a VIA element. In a typical process, a doped CuInO precursor film is heated in H2Se to form a doped CuInSe semiconductor film.    USE -   Semiconductor films are esp useful as absorber films in solar cells. (claimed).    ADVANTAGE -   Chalcopyrite structure semiconductor film prod has high energy and uniform efficiency when used as a photoabsorptive layer.