(US5804054-A)      Process for metal containing thin film formation comprises: electrodeposition of CuxInyGazSen(x=0-2, y=0-2, z=0-2, n=0-3) on substrate, using 1-10 V DC and 0.2-5.0 V AC at 1-100 KHz superimposed; depositing sufficient In+Se or Cu+Se by vapour deposition to form thin film of Cu(In,Ga)Se2 on substrate of stoichiometric ratios Cu=1-1.2:(In,Ga)=1-1.2:Se=2-2.5. Also claimed is electrodeposition of solar cell precursor thin film by process: electrodepositing thin film of copper, indium, gallium and selenium on substrate, in copper indium, gallium, selenium ion solution.    Also claimed is electrodeposition of solar cell precursor by depositing metallic thin film using DC and AC combination of 0.1-5 V. Also claimed is variation in solar cell precursor, varying in: immersing substrate into said ionic solution and electroplating with cathodic potential 1-10 V DC and 0.2-5 V AC at 1-100 KHz superimposed.    USE -   Electrodeposition of thin films for solar cells.    ADVANTAGE -   Economical process; highly efficient.    (EP956600-A1)      Process for metal containing thin film formation comprises: electrodeposition of CuxInyGazSen(x=0-2, y=0-2, z=0-2, n=0-3) on substrate, using 1-10 V DC and 0.2-5.0 V AC at 1-100 KHz superimposed; depositing sufficient In+Se or Cu+Se by vapour deposition to form thin film of Cu(In,Ga)Se2 on substrate of stoichiometric ratios Cu=1-1.2:(In,Ga)=1-1.2:Se=2-2.5. Also claimed is electrodeposition of solar cell precursor thin film by process: electrodepositing thin film of copper, indium, gallium and selenium on substrate, in copper indium, gallium, selenium ion solution.    Also claimed is electrodeposition of solar cell precursor by depositing metallic thin film using DC and AC combination of 0.1-5 V. Also claimed is variation in solar cell precursor, varying in: immersing substrate into said ionic solution and electroplating with cathodic potential 1-10 V DC and 0.2-5 V AC at 1-100 KHz superimposed.    USE -   Electrodeposition of thin films for solar cells.    ADVANTAGE -   Economical process; highly efficient.    (CN1204419-A)      Process for metal containing thin film formation comprises: electrodeposition of CuxInyGazSen(x=0-2, y=0-2, z=0-2, n=0-3) on substrate, using 1-10 V DC and 0.2-5.0 V AC at 1-100 KHz superimposed; depositing sufficient In+Se or Cu+Se by vapour deposition to form thin film of Cu(In,Ga)Se2 on substrate of stoichiometric ratios Cu=1-1.2:(In,Ga)=1-1.2:Se=2-2.5. Also claimed is electrodeposition of solar cell precursor thin film by process: electrodepositing thin film of copper, indium, gallium and selenium on substrate, in copper indium, gallium, selenium ion solution.    Also claimed is electrodeposition of solar cell precursor by depositing metallic thin film using DC and AC combination of 0.1-5 V. Also claimed is variation in solar cell precursor, varying in: immersing substrate into said ionic solution and electroplating with cathodic potential 1-10 V DC and 0.2-5 V AC at 1-100 KHz superimposed.    USE -   Electrodeposition of thin films for solar cells.    ADVANTAGE -   Economical process; highly efficient.    (JP2000501232-W)      Process for metal containing thin film formation comprises: electrodeposition of CuxInyGazSen(x=0-2, y=0-2, z=0-2, n=0-3) on substrate, using 1-10 V DC and 0.2-5.0 V AC at 1-100 KHz superimposed; depositing sufficient In+Se or Cu+Se by vapour deposition to form thin film of Cu(In,Ga)Se2 on substrate of stoichiometric ratios Cu=1-1.2:(In,Ga)=1-1.2:Se=2-2.5. Also claimed is electrodeposition of solar cell precursor thin film by process: electrodepositing thin film of copper, indium, gallium and selenium on substrate, in copper indium, gallium, selenium ion solution.    Also claimed is electrodeposition of solar cell precursor by depositing metallic thin film using DC and AC combination of 0.1-5 V. Also claimed is variation in solar cell precursor, varying in: immersing substrate into said ionic solution and electroplating with cathodic potential 1-10 V DC and 0.2-5 V AC at 1-100 KHz superimposed.    USE -   Electrodeposition of thin films for solar cells.    ADVANTAGE -   Economical process; highly efficient.