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Ferguson, Jr. (Date Unknown).;  Declaration of Robert Cote in Support of SEL's Motion for Summary Judgment Dismissing Samsung's Inequitable Conduct Defense to the '636 Patent (Date Unknown).;  Defendant's Motion for Summary Judgment Declaring U.S. Patent No. 5,543,636 Invalid for Failure to Enable (Date Unknown).;  Defendants' Reply in Support of Motion for Summary Judgment Declaring U.S. Patent No. 5,543,636 for Failure to Enable Date (Unknown).;  Delahoy et al., "Impurity Effects in a-Si:H Solar Cells", Conference Record, 15th IEEE Photovoltaic Specialists Conference, 1981, pp. 704-712.;  Documents discussed in Judge Ellis' opinion-C.C. Tsai, et al., "Amorphous Si Prepared in a UHV Plasma Deposition System", Journal on Non-Crystalline Solids, Proceedings of the Tenth International Conference on Amorphous and Liquid Semiconductors in Tokyo, vol. 59&60, pp. 731-734 (1983) attached to IDS as Exhibit G.;  Documents discussed in Judge Ellis' opinion-Full translation of Japanese Patent Document 56-135968 (Canon '968) attached to IDS as Exhibit F. (Date Unknown).;  Documents discussed in Judge Ellis' opinion-Japanese Patent Document 56-135968 (Canon '968) attached to IDS as Exhibit D. Oct. 1981.;  Documents discussed in Judge Ellis' opinion-Japanese Patent Document 58-2073 (the Sony 2073 reference) attached to IDS as Exhibit K. Jan. 1983.;  Documents discussed in Judge Ellis' opinion-Japanese Patent Document 59-35423 (the '423 reference) attached to IDS as Exhibit H. Feb. 1984.;  Documents discussed in Judge Ellis' opinion-Japanese Patent Document 59-35488 (the '488 reference) attached to IDS as Exhibit I. Feb. 1984.;  Documents discussed in Judge Ellis' opinion-Partial translation of Japanese Patent Document 56-135968 (Canon '968) attached to IDS as Exhibit E. (Date Unknown).;  Documents discussed in Judge Ellis' opinion-Presentation materials from speech by Dr. Yamazaki in Reston, Virginia in May, 1983 attached to IDS as Exhibit L.;  Documents discussed in Judge Ellis' opinion-U.S. patent 5,521,400 to Yamazaki (the '400 patent) attached to IDS as Exhibit J. May 1996.;  E.H. Nicollian and J.R. Brews, MOS (Metal-Oxide-Semiconductor) Physics and Technology, Chap. 5, "Control of Oxide Charges", pp. 754-775, 1982.;  E.H. Snow, A.S. Grove, B.E. Deal; J. Appl. Phys., vol. 36, No. 5, pp. 1664-1673, Published 1965, "Ion Transport Phenomena in Insulating Films".;  Exhibit B, Sanyo AM1504B cross-sectional diagram and concentrations. (Date Unknown).;  Exhibit C, Sanyo SA5511-46 cross-sectional diagram and concentrations. (Date Unknown).;  Exhibit D, Sanyo AM1408 cross-sectional diagram and concentrations. (Date Unknown).;  Exhibit E, Lockheed D1435 cross-sectional diagram and concentrations. (Date Unknown).;  Exhibit F, Lockheed 1353 solar cell, cross-sectional diagram and concentrations. (Date Unknown).;  Exhibit G, Sharp EL865 cross-sectional diagram and concentrations. (Date Unknown).;  Exhibit H, Sharp EL875 cross-sectional diagram and concentrations. (Date Unknown).;  Expert Region of Anthony Catalano (Date Unknown).;  Expert Region of Douglas Ruthven (Date Unknown).;  Expert Report of Arthur Jonath (Date Uknown).;  Expert Report of Christopher R. Wronski (Date Unknown).;  Expert Report of Dr. Bruce E. Deal (Date Unknown).;  Expert Report of Dr. John T. Davies (Date Unknown).;  Expert Report of Jan E. A. Maurits (Date Unknown).;  Expert Report of Morgan (Date Unknown).;  Expert Report of P. Warren Vidrine (Date Unknown).;  Expert Report of Stephen J. Fonash (Date Uknown).;  Expert Report of Stephen Smith (Date Unknown).;  First Amended Expert Report of Stephen J. Fonash (Date Unknown).;  First Amended and Supplemental Expert Report of Deal (Date Unknown).;  First Supplemental Expert Report of Fonash (Date Unknown).;  First Supplemental Expert Report of Harry F. Manbeck, Jr. (Date Uknown).;  First Supplemental Expert Report of Smith (Date Unknown).;  G. Fotie, J.C. Bean, J.M. Poate and C.W. Magee, Appl. Phys. Letters, 36, 840, 1980.;  G. Hetherington and L.W. Bell, Phys. Chem. Glasses, vol. 8, No. 5, pp. 206-208, Oct. 1967; "Letter to the Editor".;  G. Lucovsky, Expert Report, Semiconductor Energy Lab. Vs. Samsung, 1997.;  G. Robertson, et al., Boron-Free Silicon Detectors, Final Report of Sep. 1984 to Jun. 1988, Wright Research and Development Center, Materials Laboratory, WRDC-TR-90-4079, Sep. 1990, pp. 121-131.;  G. Scilla and G. 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