(JP10140373-A)      A ZnO film is formed by applying a current between a conductive substrate and an electrode, immersed in an aqueous solution containing at least nitrate and zinc ions, and a carbohydrate. Also claimed is a semiconductor or photoelectric conversion device having a ZnO film on a substrate, the film composed of 1st and 2nd layers having fine and large crystal grain sizes respectively. The c axes of the crystals are oblique or perpendicular to the substrate.    USE -   The 2nd film acts as an efficient reflection layer for collecting longer wavelength light, and also suppresses current overflow at the time of shunt.    ADVANTAGE -   The film is stably produced, and has excellent adhesion to the substrate.    (JP10195693-A)      A ZnO film is formed by applying a current between a conductive substrate and an electrode, immersed in an aqueous solution containing at least nitrate and zinc ions, and a carbohydrate. Also claimed is a semiconductor or photoelectric conversion device having a ZnO film on a substrate, the film composed of 1st and 2nd layers having fine and large crystal grain sizes respectively. The c axes of the crystals are oblique or perpendicular to the substrate.    USE -   The 2nd film acts as an efficient reflection layer for collecting longer wavelength light, and also suppresses current overflow at the time of shunt.    ADVANTAGE -   The film is stably produced, and has excellent adhesion to the substrate.    (US5804466-A)      A ZnO film is formed by applying a current between a conductive substrate and an electrode, immersed in an aqueous solution containing at least nitrate and zinc ions, and a carbohydrate. Also claimed is a semiconductor or photoelectric conversion device having a ZnO film on a substrate, the film composed of 1st and 2nd layers having fine and large crystal grain sizes respectively. The c axes of the crystals are oblique or perpendicular to the substrate.    USE -   The 2nd film acts as an efficient reflection layer for collecting longer wavelength light, and also suppresses current overflow at the time of shunt.    ADVANTAGE -   The film is stably produced, and has excellent adhesion to the substrate.    (EP794270-B1)      A ZnO film is formed by applying a current between a conductive substrate and an electrode, immersed in an aqueous solution containing at least nitrate and zinc ions, and a carbohydrate. Also claimed is a semiconductor or photoelectric conversion device having a ZnO film on a substrate, the film composed of 1st and 2nd layers having fine and large crystal grain sizes respectively. The c axes of the crystals are oblique or perpendicular to the substrate.    USE -   The 2nd film acts as an efficient reflection layer for collecting longer wavelength light, and also suppresses current overflow at the time of shunt.    ADVANTAGE -   The film is stably produced, and has excellent adhesion to the substrate.