(JP3017422-B2)      The photovoltaic element array includes an insulating layer (102) covering a thin metal plate substrate (10), with electrodes (103) deposited on the insulator. The electrodes, which may be transparent or opaque, are completely separated by grooves. A transparent layer (105) is deposited on the electrodes, and completely covers both the electrodes and the grooves. The transparent layer reflects light incident on the electrodes. A semiconductor photovoltaic layer (106), contg. e.g. a PN junction, a PIN junction or a Schottky junction, is formed on the transparent layer.    Transparent electrodes (107) are formed on the photovoltaic layer, and are separated by grooves (108) which are located in positions laterally offset (X) from the grooves between the first electrodes. Conductive material (109) connects adjacent lower and upper electrodes, through a hole formed in the transparent electrode and the semiconductor layer. Pref. the transparent layer resistivity is 30-110 ohm-cm, and the transparent layer transmittance is at least 85% at a wavelength of 700 nm and at least 70% at 530 nm wavelength. The transparent layer is pref. of a metal oxide.    ADVANTAGE -   Maintains yield and reliability, with increased conversion efficiency; allows reduced intensity laser beam in groove formation.    (US6080928-A)      The photovoltaic element array includes an insulating layer (102) covering a thin metal plate substrate (10), with electrodes (103) deposited on the insulator. The electrodes, which may be transparent or opaque, are completely separated by grooves. A transparent layer (105) is deposited on the electrodes, and completely covers both the electrodes and the grooves. The transparent layer reflects light incident on the electrodes. A semiconductor photovoltaic layer (106), contg. e.g. a PN junction, a PIN junction or a Schottky junction, is formed on the transparent layer.    Transparent electrodes (107) are formed on the photovoltaic layer, and are separated by grooves (108) which are located in positions laterally offset (X) from the grooves between the first electrodes. Conductive material (109) connects adjacent lower and upper electrodes, through a hole formed in the transparent electrode and the semiconductor layer. Pref. the transparent layer resistivity is 30-110 ohm-cm, and the transparent layer transmittance is at least 85% at a wavelength of 700 nm and at least 70% at 530 nm wavelength. The transparent layer is pref. of a metal oxide.    ADVANTAGE -   Maintains yield and reliability, with increased conversion efficiency; allows reduced intensity laser beam in groove formation.