(US5700333-A)      The method involves formation of Si oxide film (102) and amorphous Si film (103) on a substrate (101). A catalyser element is added to the front phase of Si film. Then heat processing is carried out. The amorphous Si film is crystallized and crystal- line Si film (104) is formed.    The catalyser element in the crystalline Si film is diffused by phosphorus gettering which decreases the concentration of the catalyser element in the film. The concentration is in the range of 5x1018/cm3.    ADVANTAGE -   Improves photoelectric conversion characteristics. Reduces concentration of catalyser element in thin film. Requires low heat processing temperature. Uses cheap glass substrate.    (TW355845-A)      The method involves formation of Si oxide film (102) and amorphous Si film (103) on a substrate (101). A catalyser element is added to the front phase of Si film. Then heat processing is carried out. The amorphous Si film is crystallized and crystal- line Si film (104) is formed.    The catalyser element in the crystalline Si film is diffused by phosphorus gettering which decreases the concentration of the catalyser element in the film. The concentration is in the range of 5x1018/cm3.    ADVANTAGE -   Improves photoelectric conversion characteristics. Reduces concentration of catalyser element in thin film. Requires low heat processing temperature. Uses cheap glass substrate.    (US5961743-A)      The method involves formation of Si oxide film (102) and amorphous Si film (103) on a substrate (101). A catalyser element is added to the front phase of Si film. Then heat processing is carried out. The amorphous Si film is crystallized and crystal- line Si film (104) is formed.    The catalyser element in the crystalline Si film is diffused by phosphorus gettering which decreases the concentration of the catalyser element in the film. The concentration is in the range of 5x1018/cm3.    ADVANTAGE -   Improves photoelectric conversion characteristics. Reduces concentration of catalyser element in thin film. Requires low heat processing temperature. Uses cheap glass substrate.