(JP9092849-A)      A photovoltaic devices mfd. by (a) depositing a reflecting layer (101) material onto a substrate (100) held at 200-500C.; (b) covering the substrate (100) to 100C. or below; (c) depositing a reflection enhancing layer (102) at a substrate temp. of 200-400C., and (d) forming a pin structure layer of n-type (103), i-type (104) and p-type (105) non-single crystal semiconductor layers contg. Si atoms.. The pin structure is repeated at least once.    ADVANTAGE -   Improved photoelectric conversion efficiency, high reliability films which do not peel off even at high temp. and/or high humidity. the film can be formed with high productivity with cracking at bending portions, low shunt resistance, and no cracking or peeling on cutting. Good interlayer adhesion.    (JP9092856-A)      A photovoltaic devices mfd. by (a) depositing a reflecting layer (101) material onto a substrate (100) held at 200-500C.; (b) covering the substrate (100) to 100C. or below; (c) depositing a reflection enhancing layer (102) at a substrate temp. of 200-400C., and (d) forming a pin structure layer of n-type (103), i-type (104) and p-type (105) non-single crystal semiconductor layers contg. Si atoms.. The pin structure is repeated at least once.    ADVANTAGE -   Improved photoelectric conversion efficiency, high reliability films which do not peel off even at high temp. and/or high humidity. the film can be formed with high productivity with cracking at bending portions, low shunt resistance, and no cracking or peeling on cutting. Good interlayer adhesion.    (JP9092857-A)      A photovoltaic devices mfd. by (a) depositing a reflecting layer (101) material onto a substrate (100) held at 200-500C.; (b) covering the substrate (100) to 100C. or below; (c) depositing a reflection enhancing layer (102) at a substrate temp. of 200-400C., and (d) forming a pin structure layer of n-type (103), i-type (104) and p-type (105) non-single crystal semiconductor layers contg. Si atoms.. The pin structure is repeated at least once.    ADVANTAGE -   Improved photoelectric conversion efficiency, high reliability films which do not peel off even at high temp. and/or high humidity. the film can be formed with high productivity with cracking at bending portions, low shunt resistance, and no cracking or peeling on cutting. Good interlayer adhesion.    (JP9092858-A)      A photovoltaic devices mfd. by (a) depositing a reflecting layer (101) material onto a substrate (100) held at 200-500C.; (b) covering the substrate (100) to 100C. or below; (c) depositing a reflection enhancing layer (102) at a substrate temp. of 200-400C., and (d) forming a pin structure layer of n-type (103), i-type (104) and p-type (105) non-single crystal semiconductor layers contg. Si atoms.. The pin structure is repeated at least once.    ADVANTAGE -   Improved photoelectric conversion efficiency, high reliability films which do not peel off even at high temp. and/or high humidity. the film can be formed with high productivity with cracking at bending portions, low shunt resistance, and no cracking or peeling on cutting. Good interlayer adhesion.    (JP9092859-A)      A photovoltaic devices mfd. by (a) depositing a reflecting layer (101) material onto a substrate (100) held at 200-500C.; (b) covering the substrate (100) to 100C. or below; (c) depositing a reflection enhancing layer (102) at a substrate temp. of 200-400C., and (d) forming a pin structure layer of n-type (103), i-type (104) and p-type (105) non-single crystal semiconductor layers contg. Si atoms.. The pin structure is repeated at least once.    ADVANTAGE -   Improved photoelectric conversion efficiency, high reliability films which do not peel off even at high temp. and/or high humidity. the film can be formed with high productivity with cracking at bending portions, low shunt resistance, and no cracking or peeling on cutting. Good interlayer adhesion.    (US5824566-A)      A photovoltaic devices mfd. by (a) depositing a reflecting layer (101) material onto a substrate (100) held at 200-500C.; (b) covering the substrate (100) to 100C. or below; (c) depositing a reflection enhancing layer (102) at a substrate temp. of 200-400C., and (d) forming a pin structure layer of n-type (103), i-type (104) and p-type (105) non-single crystal semiconductor layers contg. Si atoms.. The pin structure is repeated at least once.    ADVANTAGE -   Improved photoelectric conversion efficiency, high reliability films which do not peel off even at high temp. and/or high humidity. the film can be formed with high productivity with cracking at bending portions, low shunt resistance, and no cracking or peeling on cutting. Good interlayer adhesion.