(JP10104358-A)      Multilayer plate for X-ray imaging comprises a substrate (12) and a biasing electrode (14) sandwiching a membrane (16) formed of a thick photoconductive layer (I) (18) of doped amorphous Se with an amorphous As2Se3 thin buffer layer (20) between (I) and the substrate and/or a unipolar conductive thin buffer layer (22) of alkali-doped Se between (I) and the biasing electrode. Preferably both thin buffer layers are included.In embodiments, (I) has a thickness of 100 micron-2 mm, the As2Se3 layer has a thickness of 0.5-10 micron and the alkali-doped Se layer has a thickness of 0.5-10 micron. Method for forming the plate by depositing the layers by successive evaporation steps is claimed.    USE -   In a wide range of X-ray imaging technologies, including medical and non-destructive testing.    ADVANTAGE -   The As2Se3 buffer layer is essential for static mode imaging for charge neutralisation when the biasing voltage is removed. The layer allows `self-reconditioning' of the plate and is electron-blocking and adhesion-promoting during thermal cycling. The unipolar buffer layer is essential for dynamic mode imaging to minimise charge injection from the top electrode until charge carriers generated by the X-rays neutralise the space charge.    (US5880472-A)      Multilayer plate for X-ray imaging comprises a substrate (12) and a biasing electrode (14) sandwiching a membrane (16) formed of a thick photoconductive layer (I) (18) of doped amorphous Se with an amorphous As2Se3 thin buffer layer (20) between (I) and the substrate and/or a unipolar conductive thin buffer layer (22) of alkali-doped Se between (I) and the biasing electrode. Preferably both thin buffer layers are included.In embodiments, (I) has a thickness of 100 micron-2 mm, the As2Se3 layer has a thickness of 0.5-10 micron and the alkali-doped Se layer has a thickness of 0.5-10 micron. Method for forming the plate by depositing the layers by successive evaporation steps is claimed.    USE -   In a wide range of X-ray imaging technologies, including medical and non-destructive testing.    ADVANTAGE -   The As2Se3 buffer layer is essential for static mode imaging for charge neutralisation when the biasing voltage is removed. The layer allows `self-reconditioning' of the plate and is electron-blocking and adhesion-promoting during thermal cycling. The unipolar buffer layer is essential for dynamic mode imaging to minimise charge injection from the top electrode until charge carriers generated by the X-rays neutralise the space charge.    (US6171643-B1)      Multilayer plate for X-ray imaging comprises a substrate (12) and a biasing electrode (14) sandwiching a membrane (16) formed of a thick photoconductive layer (I) (18) of doped amorphous Se with an amorphous As2Se3 thin buffer layer (20) between (I) and the substrate and/or a unipolar conductive thin buffer layer (22) of alkali-doped Se between (I) and the biasing electrode. Preferably both thin buffer layers are included.In embodiments, (I) has a thickness of 100 micron-2 mm, the As2Se3 layer has a thickness of 0.5-10 micron and the alkali-doped Se layer has a thickness of 0.5-10 micron. Method for forming the plate by depositing the layers by successive evaporation steps is claimed.    USE -   In a wide range of X-ray imaging technologies, including medical and non-destructive testing.    ADVANTAGE -   The As2Se3 buffer layer is essential for static mode imaging for charge neutralisation when the biasing voltage is removed. The layer allows `self-reconditioning' of the plate and is electron-blocking and adhesion-promoting during thermal cycling. The unipolar buffer layer is essential for dynamic mode imaging to minimise charge injection from the top electrode until charge carriers generated by the X-rays neutralise the space charge.