(JP10117005-A)      The solar battery includes an insulated substrate (1), a lower electrode (2) formed on the insulated substrate. The insulated substrate comprises P-type semiconductor thin film and the lower electrode comprises an N-type semiconductor thin film. A resistance film (6) of thickness 100 or less is formed at the PN junction.    ADVANTAGE -   Reduces leakage current thus ensuring high efficiency.    (JP10341029-A)      (I) Solar cell comprising; substrate with a back electrode formed on it, p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a p-n junction, and a transparent electrode formed on the n-type thin film. A material having a higher resistivity than the p-type chalcopyrite layer is formed between it and the n-type film. Also claimed (II) is a method of fabricating the cell as (I) by forming the layer in sequence and in which the high resistivity material is formed by contacting the chalcopyrite layer with a solution containing Group IIIb and Vb elements.    USE -   Fabrication of solar cells.    ADVANTAGE -   Reduced defect density at the p-n interface gives higher energy conversion efficiency.    (US6023020-A)      (I) Solar cell comprising; substrate with a back electrode formed on it, p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a p-n junction, and a transparent electrode formed on the n-type thin film. A material having a higher resistivity than the p-type chalcopyrite layer is formed between it and the n-type film. Also claimed (II) is a method of fabricating the cell as (I) by forming the layer in sequence and in which the high resistivity material is formed by contacting the chalcopyrite layer with a solution containing Group IIIb and Vb elements.    USE -   Fabrication of solar cells.    ADVANTAGE -   Reduced defect density at the p-n interface gives higher energy conversion efficiency.