(JP10150211-A)      The manufacture of a thin film semiconductor device configured to form the thin-film semiconductor device on a first substrate and transfer the thin-film semiconductor device from the first substrate to a second substrate, comprises (i) forming a porous layer containing a separation layer on the first substrate; (ii) forming the thin-film semiconductor device on the porous layer; and (iii) after bonding the second substrate different from the first substrate in contraction coefficient by cooling onto the thin film semiconductor device, cooling the product by cooling unit to produce a shear stress in the separation layer in the porous layer and to separate the thin film semiconductor device from the first substrate along the separation layer.    Also claimed are (1) the apparatus for manufacturing a thin-film semiconductor device configured to transfer the thin-film semiconductor device formed on a first substrate onto a second substrate different from the second coefficient by cooling; and (2) a thin film semiconductor device.    USE -   The method is especially used in the production of solar cells (claimed).    ADVANTAGE -   The thin-film semiconductor device is readily separated and transferred from one substrate to another. Problems of separation during the semiconductor device being made are avoided. Large area thin-film semiconductor devices are formed. Quality is improved at reduced cost. Flexibility, miniaturisation etc. are possible. The solar cell formed can be see-through.    (JP10190032-A)      The manufacture of a thin film semiconductor device configured to form the thin-film semiconductor device on a first substrate and transfer the thin-film semiconductor device from the first substrate to a second substrate, comprises (i) forming a porous layer containing a separation layer on the first substrate; (ii) forming the thin-film semiconductor device on the porous layer; and (iii) after bonding the second substrate different from the first substrate in contraction coefficient by cooling onto the thin film semiconductor device, cooling the product by cooling unit to produce a shear stress in the separation layer in the porous layer and to separate the thin film semiconductor device from the first substrate along the separation layer.    Also claimed are (1) the apparatus for manufacturing a thin-film semiconductor device configured to transfer the thin-film semiconductor device formed on a first substrate onto a second substrate different from the second coefficient by cooling; and (2) a thin film semiconductor device.    USE -   The method is especially used in the production of solar cells (claimed).    ADVANTAGE -   The thin-film semiconductor device is readily separated and transferred from one substrate to another. Problems of separation during the semiconductor device being made are avoided. Large area thin-film semiconductor devices are formed. Quality is improved at reduced cost. Flexibility, miniaturisation etc. are possible. The solar cell formed can be see-through.