(JP11040824-A)      A semiconductor based device is fabricated by depositing a polycrystalline SiGe layer on a substrate, pref. a silicon substrate. Also claimed is the fabrication of an infrared sensitive bolometer by forming and patterning a sacrificial layer (12) on a substrate (10), and depositing and patterning a layer of polycrystalline SiGe (13) in order to form an active area (16) and supports (15) of the detector. The supports are highly doped and the active area moderately doped, and a stack of layers deposited to form an IR absorber, before removing the sacrificial layer.    USE -   Fabrication of an infrared (IR) radiation detector, particularly an IR sensitive bolometer, using micro-machining techniques.    ADVANTAGE -   The detector is fabricated with a material having a lower thermal conductance, and similar or superior electrical and mechanical properties, but still compatible with standard IC technologies.    (US6194722-B1)      A semiconductor based device is fabricated by depositing a polycrystalline SiGe layer on a substrate, pref. a silicon substrate. Also claimed is the fabrication of an infrared sensitive bolometer by forming and patterning a sacrificial layer (12) on a substrate (10), and depositing and patterning a layer of polycrystalline SiGe (13) in order to form an active area (16) and supports (15) of the detector. The supports are highly doped and the active area moderately doped, and a stack of layers deposited to form an IR absorber, before removing the sacrificial layer.    USE -   Fabrication of an infrared (IR) radiation detector, particularly an IR sensitive bolometer, using micro-machining techniques.    ADVANTAGE -   The detector is fabricated with a material having a lower thermal conductance, and similar or superior electrical and mechanical properties, but still compatible with standard IC technologies.    (US6274462-B1)      A semiconductor based device is fabricated by depositing a polycrystalline SiGe layer on a substrate, pref. a silicon substrate. Also claimed is the fabrication of an infrared sensitive bolometer by forming and patterning a sacrificial layer (12) on a substrate (10), and depositing and patterning a layer of polycrystalline SiGe (13) in order to form an active area (16) and supports (15) of the detector. The supports are highly doped and the active area moderately doped, and a stack of layers deposited to form an IR absorber, before removing the sacrificial layer.    USE -   Fabrication of an infrared (IR) radiation detector, particularly an IR sensitive bolometer, using micro-machining techniques.    ADVANTAGE -   The detector is fabricated with a material having a lower thermal conductance, and similar or superior electrical and mechanical properties, but still compatible with standard IC technologies.