(EP846336-A2)      Thin film transistor is manufactured by: depositing an amorphous film (11) on a substrate (10); patterning the film to form an island (11) with sidewalls (12); forming a mask (20) over the edge regions and adjacent substrate areas; and irradiating (50) the exposed amorphous film area to convert it to a crystalline channel region (1).    USE -   As a TFT in a liquid crystal display or other flat panel display or large-area image sensor etc. The structure is especially useful for reducing leakage currents in TFTs which have a top gate.    ADVANTAGE -   Thin-film TFT islands with amorphous edges are more efficiently formed than in the prior art. The film is initially deposited as a low-temperature amorphous film (so that e.g., polymer substrates can be used) and is then converted to a crystalline film at the centre regions.    (US5980763-A)      Thin film transistor is manufactured by: depositing an amorphous film (11) on a substrate (10); patterning the film to form an island (11) with sidewalls (12); forming a mask (20) over the edge regions and adjacent substrate areas; and irradiating (50) the exposed amorphous film area to convert it to a crystalline channel region (1).    USE -   As a TFT in a liquid crystal display or other flat panel display or large-area image sensor etc. The structure is especially useful for reducing leakage currents in TFTs which have a top gate.    ADVANTAGE -   Thin-film TFT islands with amorphous edges are more efficiently formed than in the prior art. The film is initially deposited as a low-temperature amorphous film (so that e.g., polymer substrates can be used) and is then converted to a crystalline film at the centre regions.    (JP11514152-W)      Thin film transistor is manufactured by: depositing an amorphous film (11) on a substrate (10); patterning the film to form an island (11) with sidewalls (12); forming a mask (20) over the edge regions and adjacent substrate areas; and irradiating (50) the exposed amorphous film area to convert it to a crystalline channel region (1).    USE -   As a TFT in a liquid crystal display or other flat panel display or large-area image sensor etc. The structure is especially useful for reducing leakage currents in TFTs which have a top gate.    ADVANTAGE -   Thin-film TFT islands with amorphous edges are more efficiently formed than in the prior art. The film is initially deposited as a low-temperature amorphous film (so that e.g., polymer substrates can be used) and is then converted to a crystalline film at the centre regions.    (JP3091863-B2)      Thin film transistor is manufactured by: depositing an amorphous film (11) on a substrate (10); patterning the film to form an island (11) with sidewalls (12); forming a mask (20) over the edge regions and adjacent substrate areas; and irradiating (50) the exposed amorphous film area to convert it to a crystalline channel region (1).    USE -   As a TFT in a liquid crystal display or other flat panel display or large-area image sensor etc. The structure is especially useful for reducing leakage currents in TFTs which have a top gate.    ADVANTAGE -   Thin-film TFT islands with amorphous edges are more efficiently formed than in the prior art. The film is initially deposited as a low-temperature amorphous film (so that e.g., polymer substrates can be used) and is then converted to a crystalline film at the centre regions.