(WO9809337-A1)      A process for producing CIS (copper indium selenide or sulphide) strip solar cells involves (a) electroplating one side of a pre-cleaned copper strip with indium during continuous coil to coil passage; (b) subjecting the plated strip to continuous rapid heating by contact with a heated graphite body and to one-side contact with hot sulphur or selenium vapour in a narrow gap; (c) selectively etching away the resulting copper sulphide layer; and (d) coating the CIS layer surface with a transparent collector or adaptation layer of p+-conductive copper oxide sulphide. Ga or an In-Ga alloy can be used instead of In, Se or an S/Se mixture can be used instead of S and other p+-conductive transparent compounds (e.g. ZnTe and Cu2O) can be used instead of copper oxide sulphide.    Also claimed is a narrow gap reactor for carrying out the above process, in which a reaction gap is enclosed by a radiant heated stationary graphite heater (1) with a convex gap surface, a gas heater (2) (option ally of graphite) with a concave gap surface and two quartz glass plates (3) for sealing the gap (4).    ADVANTAGE -   The process allows highly efficient and economical deposition of adherent CIS solar cells on copper strips. The reactor ensures rapid and continuous strip heating utilising the good sliding properties and thermal conductivity of graphite so that rotating heated parts are not required; provides high material utilisation efficiency by using a precisely defined narrow reaction space; ensures high reactivity of Se and S by gas and strip heating; and has a simple and inexpensive construction.    (DE19634580-C2)      A process for producing CIS (copper indium selenide or sulphide) strip solar cells involves (a) electroplating one side of a pre-cleaned copper strip with indium during continuous coil to coil passage; (b) subjecting the plated strip to continuous rapid heating by contact with a heated graphite body and to one-side contact with hot sulphur or selenium vapour in a narrow gap; (c) selectively etching away the resulting copper sulphide layer; and (d) coating the CIS layer surface with a transparent collector or adaptation layer of p+-conductive copper oxide sulphide. Ga or an In-Ga alloy can be used instead of In, Se or an S/Se mixture can be used instead of S and other p+-conductive transparent compounds (e.g. ZnTe and Cu2O) can be used instead of copper oxide sulphide.    Also claimed is a narrow gap reactor for carrying out the above process, in which a reaction gap is enclosed by a radiant heated stationary graphite heater (1) with a convex gap surface, a gas heater (2) (option ally of graphite) with a concave gap surface and two quartz glass plates (3) for sealing the gap (4).    ADVANTAGE -   The process allows highly efficient and economical deposition of adherent CIS solar cells on copper strips. The reactor ensures rapid and continuous strip heating utilising the good sliding properties and thermal conductivity of graphite so that rotating heated parts are not required; provides high material utilisation efficiency by using a precisely defined narrow reaction space; ensures high reactivity of Se and S by gas and strip heating; and has a simple and inexpensive construction.    (EP922303-A1)      A process for producing CIS (copper indium selenide or sulphide) strip solar cells involves (a) electroplating one side of a pre-cleaned copper strip with indium during continuous coil to coil passage; (b) subjecting the plated strip to continuous rapid heating by contact with a heated graphite body and to one-side contact with hot sulphur or selenium vapour in a narrow gap; (c) selectively etching away the resulting copper sulphide layer; and (d) coating the CIS layer surface with a transparent collector or adaptation layer of p+-conductive copper oxide sulphide. Ga or an In-Ga alloy can be used instead of In, Se or an S/Se mixture can be used instead of S and other p+-conductive transparent compounds (e.g. ZnTe and Cu2O) can be used instead of copper oxide sulphide.    Also claimed is a narrow gap reactor for carrying out the above process, in which a reaction gap is enclosed by a radiant heated stationary graphite heater (1) with a convex gap surface, a gas heater (2) (option ally of graphite) with a concave gap surface and two quartz glass plates (3) for sealing the gap (4).    ADVANTAGE -   The process allows highly efficient and economical deposition of adherent CIS solar cells on copper strips. The reactor ensures rapid and continuous strip heating utilising the good sliding properties and thermal conductivity of graphite so that rotating heated parts are not required; provides high material utilisation efficiency by using a precisely defined narrow reaction space; ensures high reactivity of Se and S by gas and strip heating; and has a simple and inexpensive construction.    (EP922303-B1)      A process for producing CIS (copper indium selenide or sulphide) strip solar cells involves (a) electroplating one side of a pre-cleaned copper strip with indium during continuous coil to coil passage; (b) subjecting the plated strip to continuous rapid heating by contact with a heated graphite body and to one-side contact with hot sulphur or selenium vapour in a narrow gap; (c) selectively etching away the resulting copper sulphide layer; and (d) coating the CIS layer surface with a transparent collector or adaptation layer of p+-conductive copper oxide sulphide. Ga or an In-Ga alloy can be used instead of In, Se or an S/Se mixture can be used instead of S and other p+-conductive transparent compounds (e.g. ZnTe and Cu2O) can be used instead of copper oxide sulphide.    Also claimed is a narrow gap reactor for carrying out the above process, in which a reaction gap is enclosed by a radiant heated stationary graphite heater (1) with a convex gap surface, a gas heater (2) (option ally of graphite) with a concave gap surface and two quartz glass plates (3) for sealing the gap (4).    ADVANTAGE -   The process allows highly efficient and economical deposition of adherent CIS solar cells on copper strips. The reactor ensures rapid and continuous strip heating utilising the good sliding properties and thermal conductivity of graphite so that rotating heated parts are not required; provides high material utilisation efficiency by using a precisely defined narrow reaction space; ensures high reactivity of Se and S by gas and strip heating; and has a simple and inexpensive construction.    (JP2000503808-W)      A process for producing CIS (copper indium selenide or sulphide) strip solar cells involves (a) electroplating one side of a pre-cleaned copper strip with indium during continuous coil to coil passage; (b) subjecting the plated strip to continuous rapid heating by contact with a heated graphite body and to one-side contact with hot sulphur or selenium vapour in a narrow gap; (c) selectively etching away the resulting copper sulphide layer; and (d) coating the CIS layer surface with a transparent collector or adaptation layer of p+-conductive copper oxide sulphide. Ga or an In-Ga alloy can be used instead of In, Se or an S/Se mixture can be used instead of S and other p+-conductive transparent compounds (e.g. ZnTe and Cu2O) can be used instead of copper oxide sulphide.    Also claimed is a narrow gap reactor for carrying out the above process, in which a reaction gap is enclosed by a radiant heated stationary graphite heater (1) with a convex gap surface, a gas heater (2) (option ally of graphite) with a concave gap surface and two quartz glass plates (3) for sealing the gap (4).    ADVANTAGE -   The process allows highly efficient and economical deposition of adherent CIS solar cells on copper strips. The reactor ensures rapid and continuous strip heating utilising the good sliding properties and thermal conductivity of graphite so that rotating heated parts are not required; provides high material utilisation efficiency by using a precisely defined narrow reaction space; ensures high reactivity of Se and S by gas and strip heating; and has a simple and inexpensive construction.    (US6117703-A)      A process for producing CIS (copper indium selenide or sulphide) strip solar cells involves (a) electroplating one side of a pre-cleaned copper strip with indium during continuous coil to coil passage; (b) subjecting the plated strip to continuous rapid heating by contact with a heated graphite body and to one-side contact with hot sulphur or selenium vapour in a narrow gap; (c) selectively etching away the resulting copper sulphide layer; and (d) coating the CIS layer surface with a transparent collector or adaptation layer of p+-conductive copper oxide sulphide. Ga or an In-Ga alloy can be used instead of In, Se or an S/Se mixture can be used instead of S and other p+-conductive transparent compounds (e.g. ZnTe and Cu2O) can be used instead of copper oxide sulphide.    Also claimed is a narrow gap reactor for carrying out the above process, in which a reaction gap is enclosed by a radiant heated stationary graphite heater (1) with a convex gap surface, a gas heater (2) (option ally of graphite) with a concave gap surface and two quartz glass plates (3) for sealing the gap (4).    ADVANTAGE -   The process allows highly efficient and economical deposition of adherent CIS solar cells on copper strips. The reactor ensures rapid and continuous strip heating utilising the good sliding properties and thermal conductivity of graphite so that rotating heated parts are not required; provides high material utilisation efficiency by using a precisely defined narrow reaction space; ensures high reactivity of Se and S by gas and strip heating; and has a simple and inexpensive construction.