(EP948671-A1)      A method (I) for preparation of nano-particles or nano-whiskers of a metal II-doped metal I oxide where the metal I is indium, gallium, tin or a transition metal comprises: a) heating a metal I material l with water in vacuum at 10-3 - 10-5 Torr or electron beam evaporating a metal I material with water or an oxygen-containing volatile solvent in vacuum at 104 - 10-5 - 10-6 Torr in the presence of a metal II salt b) recovering the oxide powder from the walls of the vacuum apparatus.    Also claimed is a method (II) for preparation of metal II-intercalated and/or metal II-encaged inorganic fullerene-like structures of a metal I chalcogenide, where metal I is as in (I), comprising: a) a step as (I) a b) annealing the oxide produced in a reducing atmosphere with H2X gas where X is sulphur, selenium or tellurium c) recovering the chalcogenide Also claimed is a metal I chalcogenide (III) as in produced in (II). Also claimed is a stable suspension (IV) of a chalcogenide, as (III) produced as in (I) or (II), in a polar solvent Also claimed is a method (V) for production of thin films of chalcogenides by subjecting a suspension as (IV) to evaporation of the solvent of electrophoretic deposition onto a conductive substrate. Also claimed is a tip for scanning probe microscope coated with a single layer of a chalcogenide.    USE -   Thin films as produced in (V) are used as the photosensitive element in solar cells, in secondary battery fabrication and in electrochromic devices (all claimed). Batteries include lithium rechargeable, hydride and rechargeable types. Structures as (III) are used as lubricant, particularly in solid lubrication (claimed).    ADVANTAGE -   The chalcogenide structures are provided with intercalation with various metal atoms that influences solubility in aprotic solvents and formation of stable suspensions permits depositions of useful thin films used as claimed.    (CN1245540-A)      A method (I) for preparation of nano-particles or nano-whiskers of a metal II-doped metal I oxide where the metal I is indium, gallium, tin or a transition metal comprises: a) heating a metal I material l with water in vacuum at 10-3 - 10-5 Torr or electron beam evaporating a metal I material with water or an oxygen-containing volatile solvent in vacuum at 104 - 10-5 - 10-6 Torr in the presence of a metal II salt b) recovering the oxide powder from the walls of the vacuum apparatus.    Also claimed is a method (II) for preparation of metal II-intercalated and/or metal II-encaged inorganic fullerene-like structures of a metal I chalcogenide, where metal I is as in (I), comprising: a) a step as (I) a b) annealing the oxide produced in a reducing atmosphere with H2X gas where X is sulphur, selenium or tellurium c) recovering the chalcogenide Also claimed is a metal I chalcogenide (III) as in produced in (II). Also claimed is a stable suspension (IV) of a chalcogenide, as (III) produced as in (I) or (II), in a polar solvent Also claimed is a method (V) for production of thin films of chalcogenides by subjecting a suspension as (IV) to evaporation of the solvent of electrophoretic deposition onto a conductive substrate. Also claimed is a tip for scanning probe microscope coated with a single layer of a chalcogenide.    USE -   Thin films as produced in (V) are used as the photosensitive element in solar cells, in secondary battery fabrication and in electrochromic devices (all claimed). Batteries include lithium rechargeable, hydride and rechargeable types. Structures as (III) are used as lubricant, particularly in solid lubrication (claimed).    ADVANTAGE -   The chalcogenide structures are provided with intercalation with various metal atoms that influences solubility in aprotic solvents and formation of stable suspensions permits depositions of useful thin films used as claimed.    (US6217843-B1)      A method (I) for preparation of nano-particles or nano-whiskers of a metal II-doped metal I oxide where the metal I is indium, gallium, tin or a transition metal comprises: a) heating a metal I material l with water in vacuum at 10-3 - 10-5 Torr or electron beam evaporating a metal I material with water or an oxygen-containing volatile solvent in vacuum at 104 - 10-5 - 10-6 Torr in the presence of a metal II salt b) recovering the oxide powder from the walls of the vacuum apparatus.    Also claimed is a method (II) for preparation of metal II-intercalated and/or metal II-encaged inorganic fullerene-like structures of a metal I chalcogenide, where metal I is as in (I), comprising: a) a step as (I) a b) annealing the oxide produced in a reducing atmosphere with H2X gas where X is sulphur, selenium or tellurium c) recovering the chalcogenide Also claimed is a metal I chalcogenide (III) as in produced in (II). Also claimed is a stable suspension (IV) of a chalcogenide, as (III) produced as in (I) or (II), in a polar solvent Also claimed is a method (V) for production of thin films of chalcogenides by subjecting a suspension as (IV) to evaporation of the solvent of electrophoretic deposition onto a conductive substrate. Also claimed is a tip for scanning probe microscope coated with a single layer of a chalcogenide.    USE -   Thin films as produced in (V) are used as the photosensitive element in solar cells, in secondary battery fabrication and in electrochromic devices (all claimed). Batteries include lithium rechargeable, hydride and rechargeable types. Structures as (III) are used as lubricant, particularly in solid lubrication (claimed).    ADVANTAGE -   The chalcogenide structures are provided with intercalation with various metal atoms that influences solubility in aprotic solvents and formation of stable suspensions permits depositions of useful thin films used as claimed.    (JP2001504794-W)      A method (I) for preparation of nano-particles or nano-whiskers of a metal II-doped metal I oxide where the metal I is indium, gallium, tin or a transition metal comprises: a) heating a metal I material l with water in vacuum at 10-3 - 10-5 Torr or electron beam evaporating a metal I material with water or an oxygen-containing volatile solvent in vacuum at 104 - 10-5 - 10-6 Torr in the presence of a metal II salt b) recovering the oxide powder from the walls of the vacuum apparatus.    Also claimed is a method (II) for preparation of metal II-intercalated and/or metal II-encaged inorganic fullerene-like structures of a metal I chalcogenide, where metal I is as in (I), comprising: a) a step as (I) a b) annealing the oxide produced in a reducing atmosphere with H2X gas where X is sulphur, selenium or tellurium c) recovering the chalcogenide Also claimed is a metal I chalcogenide (III) as in produced in (II). Also claimed is a stable suspension (IV) of a chalcogenide, as (III) produced as in (I) or (II), in a polar solvent Also claimed is a method (V) for production of thin films of chalcogenides by subjecting a suspension as (IV) to evaporation of the solvent of electrophoretic deposition onto a conductive substrate. Also claimed is a tip for scanning probe microscope coated with a single layer of a chalcogenide.    USE -   Thin films as produced in (V) are used as the photosensitive element in solar cells, in secondary battery fabrication and in electrochromic devices (all claimed). Batteries include lithium rechargeable, hydride and rechargeable types. Structures as (III) are used as lubricant, particularly in solid lubrication (claimed).    ADVANTAGE -   The chalcogenide structures are provided with intercalation with various metal atoms that influences solubility in aprotic solvents and formation of stable suspensions permits depositions of useful thin films used as claimed.