(FR2761086-A1)      Production of edge zone-free polycrystalline silicon articles involves tempering at above 450 (preferably 500-1000)C and then cooling at greater than 5 (preferably 10-20) K/min. to below 300C.    USE -   Production of polycrystalline silicon wafers, preferably for solar cells (claimed).    ADVANTAGE -   The heat treatment, carried out on polycrystalline silicon ingots or sliced wafers, increases the effective charge carrier lifetime, in an edge zone extending by a distance of 10% of the total ingot height from the side and bottom ingot edge, to 50% of that in the ingot interior, i.e. to 1-5 secs., without silicon losses.    (JP10259014-A)      Production of edge zone-free polycrystalline silicon articles involves tempering at above 450 (preferably 500-1000)C and then cooling at greater than 5 (preferably 10-20) K/min. to below 300C.    USE -   Production of polycrystalline silicon wafers, preferably for solar cells (claimed).    ADVANTAGE -   The heat treatment, carried out on polycrystalline silicon ingots or sliced wafers, increases the effective charge carrier lifetime, in an edge zone extending by a distance of 10% of the total ingot height from the side and bottom ingot edge, to 50% of that in the ingot interior, i.e. to 1-5 secs., without silicon losses.    (DE19711550-C2)      Production of edge zone-free polycrystalline silicon articles involves tempering at above 450 (preferably 500-1000)C and then cooling at greater than 5 (preferably 10-20) K/min. to below 300C.    USE -   Production of polycrystalline silicon wafers, preferably for solar cells (claimed).    ADVANTAGE -   The heat treatment, carried out on polycrystalline silicon ingots or sliced wafers, increases the effective charge carrier lifetime, in an edge zone extending by a distance of 10% of the total ingot height from the side and bottom ingot edge, to 50% of that in the ingot interior, i.e. to 1-5 secs., without silicon losses.    (US6153496-A)      Production of edge zone-free polycrystalline silicon articles involves tempering at above 450 (preferably 500-1000)C and then cooling at greater than 5 (preferably 10-20) K/min. to below 300C.    USE -   Production of polycrystalline silicon wafers, preferably for solar cells (claimed).    ADVANTAGE -   The heat treatment, carried out on polycrystalline silicon ingots or sliced wafers, increases the effective charge carrier lifetime, in an edge zone extending by a distance of 10% of the total ingot height from the side and bottom ingot edge, to 50% of that in the ingot interior, i.e. to 1-5 secs., without silicon losses.