(JP9321325-A)      Formation of a high-quality CdTe film by an improved proximity sublimation method includes: (i) a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support; (ii) a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces the surface of the substrate; and (iii) a third step in which the CdTe film is formed on the substrate by vaporising the semiconductor material in the film by heating the film and the substrate.    (EP853345-A1)      Formation of a high-quality CdTe film by an improved proximity sublimation method includes: (i) a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support; (ii) a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces the surface of the substrate; and (iii) a third step in which the CdTe film is formed on the substrate by vaporising the semiconductor material in the film by heating the film and the substrate.    (JP10303441-A)      Formation of a high-quality CdTe film by an improved proximity sublimation method includes: (i) a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support; (ii) a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces the surface of the substrate; and (iii) a third step in which the CdTe film is formed on the substrate by vaporising the semiconductor material in the film by heating the film and the substrate.    (JP10303445-A)      Formation of a high-quality CdTe film by an improved proximity sublimation method includes: (i) a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support; (ii) a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces the surface of the substrate; and (iii) a third step in which the CdTe film is formed on the substrate by vaporising the semiconductor material in the film by heating the film and the substrate.    (US5994642-A)      Formation of a high-quality CdTe film by an improved proximity sublimation method includes: (i) a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support; (ii) a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces the surface of the substrate; and (iii) a third step in which the CdTe film is formed on the substrate by vaporising the semiconductor material in the film by heating the film and the substrate.