(TW353237-A)      The semiconductor mfg. system uses a semiconductor body provided with at least one GaAsP semiconductor layer. The surface of the semiconductor layer is etched via a H2SO4:H2O2:H2O etching soln. in a first etching step, with subsequent etching via hydrofluoric acid, to provide a surface roughening (8) over at least part of the surface.    Pref. the surface roughening is provided by sawtooth ridges, covering the whole of the free surface area of the semiconductor body.    ADVANTAGE -   Improved light emission and/or reception characteristics.    (EP944924-A1)      The semiconductor mfg. system uses a semiconductor body provided with at least one GaAsP semiconductor layer. The surface of the semiconductor layer is etched via a H2SO4:H2O2:H2O etching soln. in a first etching step, with subsequent etching via hydrofluoric acid, to provide a surface roughening (8) over at least part of the surface.    Pref. the surface roughening is provided by sawtooth ridges, covering the whole of the free surface area of the semiconductor body.    ADVANTAGE -   Improved light emission and/or reception characteristics.    (CN1224533-A)      The semiconductor mfg. system uses a semiconductor body provided with at least one GaAsP semiconductor layer. The surface of the semiconductor layer is etched via a H2SO4:H2O2:H2O etching soln. in a first etching step, with subsequent etching via hydrofluoric acid, to provide a surface roughening (8) over at least part of the surface.    Pref. the surface roughening is provided by sawtooth ridges, covering the whole of the free surface area of the semiconductor body.    ADVANTAGE -   Improved light emission and/or reception characteristics.    (JP2001501365-W)      The semiconductor mfg. system uses a semiconductor body provided with at least one GaAsP semiconductor layer. The surface of the semiconductor layer is etched via a H2SO4:H2O2:H2O etching soln. in a first etching step, with subsequent etching via hydrofluoric acid, to provide a surface roughening (8) over at least part of the surface.    Pref. the surface roughening is provided by sawtooth ridges, covering the whole of the free surface area of the semiconductor body.    ADVANTAGE -   Improved light emission and/or reception characteristics.