(JP10200079-A)      The method involves forming non-porous semiconductor layer (13) and a porous silicon layer (12) sequentially on a pair of substrate (11,14). The multi-layered structure is bonded through the non-porous semiconductor layer.    Then, the structure is heated and is isolated along this porous silicon layer. The portion of the porous silicon layer is removed from the two substrates, separately.    USE -   For manufacturing IC.    ADVANTAGE -   Prevents separation of multilayered structure.    (US6054363-A)      Semiconductor device is manufactured by: forming a first Si substrate with a porous Si layer overlaid with a non-porous semiconductor layer; bonding the first substrate to a second substrate to form a multilayer structure with the non-porous layer inside; separating the substrates along the porous layer by heating; and removing any porous Si remaining on the substrates. The separated first substrate may then be re-used as another first or second substrate.    USE -   Used in transferring a semiconductor layer to a second substrate (which may be an insulating substrate) to form an (SOI) semiconductor substrate for the manufacture of ICs, lasers, LEDs, solar cells etc.    ADVANTAGE -   The device substrate is formed by a quick, simple and well controlled method which allows the first substrate to be re-used any number of times.    (TW372366-A)      Semiconductor device is manufactured by: forming a first Si substrate with a porous Si layer overlaid with a non-porous semiconductor layer; bonding the first substrate to a second substrate to form a multilayer structure with the non-porous layer inside; separating the substrates along the porous layer by heating; and removing any porous Si remaining on the substrates. The separated first substrate may then be re-used as another first or second substrate.    USE -   Used in transferring a semiconductor layer to a second substrate (which may be an insulating substrate) to form an (SOI) semiconductor substrate for the manufacture of ICs, lasers, LEDs, solar cells etc.    ADVANTAGE -   The device substrate is formed by a quick, simple and well controlled method which allows the first substrate to be re-used any number of times.