(JP10233518-A)      In the production of a silicon solar cell with a p-n junction formed by a functional silicon layer covered with a thin film of opposite conductivity type on its front face, its front and back face or all its faces, the p-n junction is electrically separated by provision of a glass-based material which has the property of melting silicon and which is subsequently fired. Also claimed are: (i) a solar cell having the above structure; (ii) a method of producing a semiconductor device having a junction-containing semiconductor substrate with an insulating layer on its front face and optionally its back face. The novelty is that: (a) an electrode penetrates the insulating layer for electrically contacting the substrate; (b) the insulating layer is coated with a glass-containing metal paste material which has the property of melting the insulating layer; and (c) the material is subsequently fired. Preferably, the glass contains Pb, B, Si and O as main components and the metal paste is a silver and/or aluminium paste.    ADVANTAGE -   The requisite electrical separation of the p-n junction in solar cell manufacture is achieved in a very simple manner with reduced production costs and increased productivity. The same method is used for the electrical separation of a semiconductor device (e.g. a photodiode or a light collecting element for a solar cell) for electrode formation so that significant reduction in contact resistance is achieved.    (US6071753-A)      In the production of a silicon solar cell with a p-n junction formed by a functional silicon layer covered with a thin film of opposite conductivity type on its front face, its front and back face or all its faces, the p-n junction is electrically separated by provision of a glass-based material which has the property of melting silicon and which is subsequently fired. Also claimed are: (i) a solar cell having the above structure; (ii) a method of producing a semiconductor device having a junction-containing semiconductor substrate with an insulating layer on its front face and optionally its back face. The novelty is that: (a) an electrode penetrates the insulating layer for electrically contacting the substrate; (b) the insulating layer is coated with a glass-containing metal paste material which has the property of melting the insulating layer; and (c) the material is subsequently fired. Preferably, the glass contains Pb, B, Si and O as main components and the metal paste is a silver and/or aluminium paste.    ADVANTAGE -   The requisite electrical separation of the p-n junction in solar cell manufacture is achieved in a very simple manner with reduced production costs and increased productivity. The same method is used for the electrical separation of a semiconductor device (e.g. a photodiode or a light collecting element for a solar cell) for electrode formation so that significant reduction in contact resistance is achieved.    (US6093882-A)      In the production of a silicon solar cell with a p-n junction formed by a functional silicon layer covered with a thin film of opposite conductivity type on its front face, its front and back face or all its faces, the p-n junction is electrically separated by provision of a glass-based material which has the property of melting silicon and which is subsequently fired. Also claimed are: (i) a solar cell having the above structure; (ii) a method of producing a semiconductor device having a junction-containing semiconductor substrate with an insulating layer on its front face and optionally its back face. The novelty is that: (a) an electrode penetrates the insulating layer for electrically contacting the substrate; (b) the insulating layer is coated with a glass-containing metal paste material which has the property of melting the insulating layer; and (c) the material is subsequently fired. Preferably, the glass contains Pb, B, Si and O as main components and the metal paste is a silver and/or aluminium paste.    ADVANTAGE -   The requisite electrical separation of the p-n junction in solar cell manufacture is achieved in a very simple manner with reduced production costs and increased productivity. The same method is used for the electrical separation of a semiconductor device (e.g. a photodiode or a light collecting element for a solar cell) for electrode formation so that significant reduction in contact resistance is achieved.