(JP10203813-A)      Impurity boron is removed from molten metallurgical grade Si by blowing onto the surface a mixed gas of reducing gas and water vapour, preferably in an inert gas. The gas mixture is preferably blown as a plasma jet. The reducing gas is preferably H2.    Also claimed is an apparatus for performing the process including a heated container for melting and refining the Si and a device for blowing the gas mixture onto the molten Si. The melt is preferably heated from a plasma torch (3) which generates an Ar plasma (2) which is also supplied with water vapour and H2 through nozzles (13, 14).    USE -   Used especially in the production of 5-6N purity Si for the manufacture of solar cells.    ADVANTAGE -   The boron is removed more rapidly and effectively than in prior art methods.    (JP10203814-A)      Impurity boron is removed from molten metallurgical grade Si by blowing onto the surface a mixed gas of reducing gas and water vapour, preferably in an inert gas. The gas mixture is preferably blown as a plasma jet. The reducing gas is preferably H2.    Also claimed is an apparatus for performing the process including a heated container for melting and refining the Si and a device for blowing the gas mixture onto the molten Si. The melt is preferably heated from a plasma torch (3) which generates an Ar plasma (2) which is also supplied with water vapour and H2 through nozzles (13, 14).    USE -   Used especially in the production of 5-6N purity Si for the manufacture of solar cells.    ADVANTAGE -   The boron is removed more rapidly and effectively than in prior art methods.    (JP10203816-A)      Impurity boron is removed from molten metallurgical grade Si by blowing onto the surface a mixed gas of reducing gas and water vapour, preferably in an inert gas. The gas mixture is preferably blown as a plasma jet. The reducing gas is preferably H2.    Also claimed is an apparatus for performing the process including a heated container for melting and refining the Si and a device for blowing the gas mixture onto the molten Si. The melt is preferably heated from a plasma torch (3) which generates an Ar plasma (2) which is also supplied with water vapour and H2 through nozzles (13, 14).    USE -   Used especially in the production of 5-6N purity Si for the manufacture of solar cells.    ADVANTAGE -   The boron is removed more rapidly and effectively than in prior art methods.    (JP10212113-A)      Impurity boron is removed from molten metallurgical grade Si by blowing onto the surface a mixed gas of reducing gas and water vapour, preferably in an inert gas. The gas mixture is preferably blown as a plasma jet. The reducing gas is preferably H2.    Also claimed is an apparatus for performing the process including a heated container for melting and refining the Si and a device for blowing the gas mixture onto the molten Si. The melt is preferably heated from a plasma torch (3) which generates an Ar plasma (2) which is also supplied with water vapour and H2 through nozzles (13, 14).    USE -   Used especially in the production of 5-6N purity Si for the manufacture of solar cells.    ADVANTAGE -   The boron is removed more rapidly and effectively than in prior art methods.    (JP10273312-A)      Impurity boron is removed from molten metallurgical grade Si by blowing onto the surface a mixed gas of reducing gas and water vapour, preferably in an inert gas. The gas mixture is preferably blown as a plasma jet. The reducing gas is preferably H2.    Also claimed is an apparatus for performing the process including a heated container for melting and refining the Si and a device for blowing the gas mixture onto the molten Si. The melt is preferably heated from a plasma torch (3) which generates an Ar plasma (2) which is also supplied with water vapour and H2 through nozzles (13, 14).    USE -   Used especially in the production of 5-6N purity Si for the manufacture of solar cells.    ADVANTAGE -   The boron is removed more rapidly and effectively than in prior art methods.    (JP10279305-A)      Impurity boron is removed from molten metallurgical grade Si by blowing onto the surface a mixed gas of reducing gas and water vapour, preferably in an inert gas. The gas mixture is preferably blown as a plasma jet. The reducing gas is preferably H2.    Also claimed is an apparatus for performing the process including a heated container for melting and refining the Si and a device for blowing the gas mixture onto the molten Si. The melt is preferably heated from a plasma torch (3) which generates an Ar plasma (2) which is also supplied with water vapour and H2 through nozzles (13, 14).    USE -   Used especially in the production of 5-6N purity Si for the manufacture of solar cells.    ADVANTAGE -   The boron is removed more rapidly and effectively than in prior art methods.    (TW372935-A)      Impurity boron is removed from molten metallurgical grade Si by blowing onto the surface a mixed gas of reducing gas and water vapour, preferably in an inert gas. The gas mixture is preferably blown as a plasma jet. The reducing gas is preferably H2.    Also claimed is an apparatus for performing the process including a heated container for melting and refining the Si and a device for blowing the gas mixture onto the molten Si. The melt is preferably heated from a plasma torch (3) which generates an Ar plasma (2) which is also supplied with water vapour and H2 through nozzles (13, 14).    USE -   Used especially in the production of 5-6N purity Si for the manufacture of solar cells.    ADVANTAGE -   The boron is removed more rapidly and effectively than in prior art methods.