(JP10045494-A)      (I) Process for growing a crystalline silicon plate comprising; a) Placing a melt of silicon into a planar growth crucible which has a melt draw-out opening at its lower side and a tip portion located under the draw-out opening. b) Drawing out the melt from the crucible through the draw-out opening bringing the melt into contact with the tip portion of the growth member. c) Growing the crystal plate by pulling down the melt through the tip portion of the growth member. Also claimed (II) is an apparatus for growing crystalline plate comprising; growth crucible with a melt draw-out opening, planar growth member with a driving mechanism adapted to bring the melt through tip portion of the draw-out opening. Also claimed is a crystalline plate 5 - 200 m thick with a reinforcing projection 30 - 1500 m thick made by the process using the apparatus. Also claimed (III) is the process as one used to produce a silicon plate with N or P doping on one side of the plate by arranging a diffusion member under at least the tip portion of the growth plate with control of temperature such that a dopant in the diffusion member diffuses into the surface of the plate while it is being pulled.    USE -   Silicon substrates for solar cells.    ADVANTAGE -   Method produces plates with aggregates of single crystals 10 -70 mm diameter which when used in solar cells gives 18% efficiency with a variation of only 1%.    (US6072118-A)      (I) Process for growing a crystalline silicon plate comprising; a) Placing a melt of silicon into a planar growth crucible which has a melt draw-out opening at its lower side and a tip portion located under the draw-out opening. b) Drawing out the melt from the crucible through the draw-out opening bringing the melt into contact with the tip portion of the growth member. c) Growing the crystal plate by pulling down the melt through the tip portion of the growth member. Also claimed (II) is an apparatus for growing crystalline plate comprising; growth crucible with a melt draw-out opening, planar growth member with a driving mechanism adapted to bring the melt through tip portion of the draw-out opening. Also claimed is a crystalline plate 5 - 200 m thick with a reinforcing projection 30 - 1500 m thick made by the process using the apparatus. Also claimed (III) is the process as one used to produce a silicon plate with N or P doping on one side of the plate by arranging a diffusion member under at least the tip portion of the growth plate with control of temperature such that a dopant in the diffusion member diffuses into the surface of the plate while it is being pulled.    USE -   Silicon substrates for solar cells.    ADVANTAGE -   Method produces plates with aggregates of single crystals 10 -70 mm diameter which when used in solar cells gives 18% efficiency with a variation of only 1%.    (US6180872-B1)      (I) Process for growing a crystalline silicon plate comprising; a) Placing a melt of silicon into a planar growth crucible which has a melt draw-out opening at its lower side and a tip portion located under the draw-out opening. b) Drawing out the melt from the crucible through the draw-out opening bringing the melt into contact with the tip portion of the growth member. c) Growing the crystal plate by pulling down the melt through the tip portion of the growth member. Also claimed (II) is an apparatus for growing crystalline plate comprising; growth crucible with a melt draw-out opening, planar growth member with a driving mechanism adapted to bring the melt through tip portion of the draw-out opening. Also claimed is a crystalline plate 5 - 200 m thick with a reinforcing projection 30 - 1500 m thick made by the process using the apparatus. Also claimed (III) is the process as one used to produce a silicon plate with N or P doping on one side of the plate by arranging a diffusion member under at least the tip portion of the growth plate with control of temperature such that a dopant in the diffusion member diffuses into the surface of the plate while it is being pulled.    USE -   Silicon substrates for solar cells.    ADVANTAGE -   Method produces plates with aggregates of single crystals 10 -70 mm diameter which when used in solar cells gives 18% efficiency with a variation of only 1%.