(JP10189924-A)      A semiconductor member is produced by: (a) implanting boron into a silicon substrate (201); (b) forming a porous layer (202) by anodising in hydrofluoric acid solution; (c) immersing the substrate into a melt to grow a semiconductor layer (203) of undoped silicon under a reducing atmosphere and at high temperature using liquid phase epitaxy (LPE); (d) growing a p+ silicon layer by LPE (204); and (e) bonding a second substrate (205), typically polyimide, onto the first using a copper paste (209) and then separating the substrates at the porous layer (202a,b) and removing it completely to release the first substrate for reuse and the second for fabrication into a completed solar cell element.    USE -   Used to produced solar cells.    ADVANTAGE -   Cells with higher performance can be produced at lower cost on a flexible substrate.    (JP10190029-A)      A semiconductor member is produced by: (a) implanting boron into a silicon substrate (201); (b) forming a porous layer (202) by anodising in hydrofluoric acid solution; (c) immersing the substrate into a melt to grow a semiconductor layer (203) of undoped silicon under a reducing atmosphere and at high temperature using liquid phase epitaxy (LPE); (d) growing a p+ silicon layer by LPE (204); and (e) bonding a second substrate (205), typically polyimide, onto the first using a copper paste (209) and then separating the substrates at the porous layer (202a,b) and removing it completely to release the first substrate for reuse and the second for fabrication into a completed solar cell element.    USE -   Used to produced solar cells.    ADVANTAGE -   Cells with higher performance can be produced at lower cost on a flexible substrate.    (US6190937-B1)      A semiconductor member is produced by: (a) implanting boron into a silicon substrate (201); (b) forming a porous layer (202) by anodising in hydrofluoric acid solution; (c) immersing the substrate into a melt to grow a semiconductor layer (203) of undoped silicon under a reducing atmosphere and at high temperature using liquid phase epitaxy (LPE); (d) growing a p+ silicon layer by LPE (204); and (e) bonding a second substrate (205), typically polyimide, onto the first using a copper paste (209) and then separating the substrates at the porous layer (202a,b) and removing it completely to release the first substrate for reuse and the second for fabrication into a completed solar cell element.    USE -   Used to produced solar cells.    ADVANTAGE -   Cells with higher performance can be produced at lower cost on a flexible substrate.