EP867701-A1  THIN SOLID FILMS, vol. 255, no. 1/02, 15 January 1995, pages 52-58, XP000607762 STEINER P ET AL: "MICROMACHINING APPLICATIONS OF POROUS SILICON";  SENSORS AND ACTUATORS A, vol. A53, no. 1/03, May 1996, pages 325-328, XP000620316 GERWEN VAN P ET AL: "THIN-FILM BORON-DOPED POLYCRYSTALLINE SILICON 70%-GERMANIUM 30% FOR THERMOPILES";  APPLIED PHYSICS LETTERS, vol. 61, no. 3, 20 July 1992, pages 315-317, XP000287677 SYUN-MING JANG ET AL: "THERMAL STABILITY OF SI/SI1-XGEX/SI HETEROSTRUCTURES DEPOSITED BY VERY LOW PRESSURE CHEMICAL VAPOR DEPOSITION";  GROWTH AND CHARACTERIZATION OF MATERIALS FOR INFRARED DETECTORS II, SAN DIEGO, CA, USA, 13-14 JULY 1995, vol. 2554, ISSN 0277-786X, PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 1995, SPIE-INT. SOC. OPT. ENG, USA, pages 43-54, XP002039425 UNEWISSE M H ET AL: "The growth and properties of semiconductor bolometers for infrared detection"US6194722-B1  Akio Tanaka, et al., "Infrared Focal Plane Array Incorporating Silicon IC Process Compatible Bolometer" IBEE Transactions on Electron Devices, vol. 43, No. 11, Nov. 1996, pp. 1844-1850.;  D. Maier-Schneider, et al., "Variations in Young's modulus and intrinsic stress of LPCVD-polysilicon due to high temperature annealing," J. Micormech, Microeng. 5 (1995) pp. 121-124.;  European Search Report, Application No. EP 98 87 0058; Reference No. P.IMEC.60BEP (Other than listed below, references cited in this Report were identified and filed on previous IDS and Form PTO-1449.;  M. H. Unewisse, et al., "The Growth and Properties of Semiconductor Bolometers for Infared Detection," SPIE vol. 2554 Growth and Characterization of Materials for Infrared Detectors, Jul. 1995 pp. 43-54.;  P. Steiner, et al., "Micromachining applications of porous silicon," Elsevier Science, Thin Solid Films, 255 (1995), pp. 52-58.;  P. Van Gerwen, et al., "Thin Film Boron Doped Polycrystalline Silicon 70%-Germanium30% for Thermopiles" Tranducers 95: Eurosensors IX, The 8th International Conference on Solid-State Sensors and Actuators and Eurosensors, Stockholm, Sweden, Jun. 25-29, pp. 210-213.;  P. Van Gerwen, et al., "Thin-film boron-doped polycrystalline silicon70%-germanium30% for thermopiles" 0924-424796S1500@1996 Elseveier Sciences, S.A.;  R. A. Wood, "Uncooled thermal imaging with monolithic silicon focal planes," SPIE vol. 202 Infrared Technology XIX (1993), pp. 322-329.;  Shiref Sedky, et al., Thermally Insulated Structures for IR Bolometers, Made of Polycrystalline Silicon Germanium Alloys-Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997.;  Syun-Ming Jang, et al. "Thermal Stability of SiSi1-xGexSi heterostructures deposited by very low pressure chemical vapor disposition" App.Phys.Lett., vol. 61, No. 3, Jul. 20, 1992.;  Theresa A. Core, et al., "Fabrication Technology for an Integrated Surface-Micromachined Sensor" Solid State Technology, Oct. 1993, pp. 39-44.;  Tsu-Joe King and Krishna C. Saraswat, "Deposition and Properties of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon-Germanium Films" J. Electrochem Co. vol. 141, No. 8, Aug. 1994.;  Uncooled infrared focal- . . . Laser Focus World, Dec. 1995.US7075081-B2  Akio Tanaka et al., Infrared Focal Plan Array Incorporating Silicon IC Process Compatible Bolometer, IEEE Transactions on Electron Devices, vol. 43, No. 11, pp. 1844-1850, Nov. 1996.;  D. Maier-Schneider et al., Variations in Young's modulus and intrinsic stress of LPCVD-polysilicon due to high temperature annealing, J. Micromech, Microeng. 5 pp. 121-124, 1995.;  Franke et al., Post-CMOS Integration of Germanium Microstructures, University of California at Berkeley, IEEE, pp. 630-637, 1999.;  Huang et al., Low-temperature epitaxy of phosphorus doped Di and Sisub 1-xGesub xfilms by RTPVLP-CVD, pp. 465-467, Conference on Solid-State and Integrated Circuit Technology, Beijing, China, Oct. 24-28, 1995.;  King et al., Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films, Journal of the Electrochemical Society, vol. 141, No. 8, pp. 2235-2241, 1994.;  M. H. Unewisse et al., The Growth and Properties of Semiconductor Bolometers for Infrared Detection, SPIE vol. 2554 Growth and Characterization of Materials for Infrared Detectors, pp. 43-54, Jul. 1995.;  P. Steiner et al., Micromachining applications of porous silicon, Elsevier Science, Thin Sold Films, 255, pp. 52-58, 1995.;  P. Van Gerwen et al., Thin Film Boron Doped Polycrystalline Silicon70%-Germanium30% for Thermopiles, Transducers 95: Eurosensors IX, The 8th International Conference on Solid-State Sensors and Actuators and Eurosensors, Stockholm, Sweden, pp. 210-213, Jun. 25-29, 1995.;  P. Van Gerwen et al., Thin-film boron-doped polycrystalline silicon70% -germanium30% for thermopiles, 0924-424796S1500@1996 Elseveier Sciences, S.A.;  Published European Search Report for Interuniversitair Micro-Elektronica Centrum, EP 02 07 7978, dated Oct. 9, 2003.;  R. A. Wood, Uncooled thermal imaging with monolithic silicon focal planes, SPIE vol. 202 Infrared Technology XIX, pp. 322-329, 1993.;  Sherif Sedky et al., Thermally Insulated Structures for IR Bolometers, Made of Polycrystalline Silicon Germanium Alloys- . . . , Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997.;  Syun-Ming Jang et al., Thermal Stability of Siil-xGexSi Hetrostructures Deposited By Very Low Pressure Chemical Vapor Deposition, Applied Physics Letters, American Institute of Physics, New Your, U.S., vol. 61, No. 3, pp. 315-317, Jul. 20, 1992.;  Syun-Ming Jang et al., Therman Stability of SiSi1-xGexSi heterostructures deposited by very low pressure chemical vapor disposition, App. Phys. Lett., vol. 61, No. 3, Jul. 20, 1992.;  Theresa A. Core et al., Fabrication Technology for an Integrated Surface-Micromachine Sensor, Solid State Technology, pp. 39-44, Oct. 1993.;  Tsu-Jae King and Krishna C. Saraswat, Deposition and Properties of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon-Germanium Films, J. Electrochem Co., vol. 141, No. 8, Aug. 1994.;  Tsu-Jae King et al., Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films, Journal of the Electrochemical Society, Electrochemical Society, Manchester, New Hampshire, U.S., vol. 141, No. 8, pp. 2235-2241, Aug. 1, 1994.;  Tsu-Jae King et al., Polycrystalline Silicon-Germanium Thin-Film Transistors, IEEE Transactions on Electron Devices, IEEE Inc., New York, NY U.S., vol. 41, No. 9, pp. 1581-1591, Sep. 1, 1994.;  Uncooled infrared focal- . . . , Laser Focus World, Dec. 1995.;  Wolf and Tauber, Silicon Processing for the VLSI Era, vol. 1: Process Technology, pp. 168-173, Lattice Press 1986, Sunset Beach, California.US7176111-B2  Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology; pp. 168 and 171; Lattice Press; 1986; Sunset Beach, CA.;  Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology; pp. 171-173; Lattice Press 1986; Sunset Beach, California.US7320896-B2  Akio Tanaka et al, Infrared Focal Plan Array Incorporating Silicon IC Process Compatible Bolometer, IEEE Transactions on Electron Devices, vol. 43, No. 11, pp. 1844-1850, Nov. 1996.;  D. Maier-Schneider et al., Variations in Young's modulus and intrinsic stress of LPCVD-polysilicon due to high temperature annealing, J. Micromech, Microeng. 5 pp. 121-124, 1995.;  Franke et al., Post-CMOS Integration of Germanium Microstructures, University of California at Berkeley, IEEE, pp. 630-637, 1999.;  Huang et al., Low-temperature epitaxy of phosphorus doped Di and Si/sub 1-x/Ge/sub x/films by RTP/VLP-CVD, pp. 465-467, Conference on Solid-State and Integrated Circuit Technology, Beijing, China, Oct. 24-28, 1995.;  King et al., Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films, Journal of the Electrochemical Society, vol. 141, No. 8, pp. 2235-2241, 1994.;  M. H. Unewisse et al., The Growth and Properties of Semiconductor Bolometers for Infrared Detection, SPIE vol. 2554 Growth and Characterization of Materials for Infrared Detectors, pp. 43-54, Jul. 1995.;  P. Steiner et al., Micromachining applications of porous silicon, Elsevier Science, Thin Sold Films, 255, pp. 52-58, 1995.;  P. Van Gerwen et al., Thin Film Boron Doped Polycrystalline Silicon70% Germanium30% for Thermopiles, Transducers 95: Eurosensors IX, The 8th International Conference on Solid-State Sensors and Actuators and Eurosensors, Stockholm, Sweden, pp. 210-213, Jun. 25-29, 1995.;  P. Van Gerwen et al., Thin-film boron-doped polycrystalline silicon70% -germanium30% for thermopiles, 0924-4247/96/S1500@1996 Elseveier Sciences, S.A.;  Published European Search Report for Interuniversitair Micro-Elektronica Centrum, EP 02 07 7978, dated Oct. 9, 2003.;  R. A. Wood, Uncooled thermal imaging with monolithic silicon focal planes, SPIE vol. 202 Infrared Technology XIX, pp. 322-329, 1993.;  Sherif Sedky et al., Thermally Insulated Structures for IR Bolometers, Made of Polycrystalline Silicon Germanium Alloys- . . . , Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997.;  Syun-Ming Jang et al., Thermal Stability of Si/i1-xGe x/Si Hetrostructures Deposited By Very Low Pressure Chemical Vapor Deposition, Applied Physics Letters, American Institute of Physics, New Your, U.S., vol. 61, No. 3, pp. 315-317, Jul. 20, 1992.;  Syun-Ming Jang et al., Therman Stability of Si/Si1-xGex/Si heterostructures deposited by very low pressure chemical vapor disposition, App. Phys. Lett., vol. 61, No. 3, Jul. 20, 1992.;  Theresa A. Core et al., Fabrication Technology for an Integrated Surface-Micromachine Sensor, Solid State Technology, pp. 39-44, Oct. 1993.;  Tsu-Jae King and Krishna C. Saraswat, Deposition and Properties of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon-Germanium Films, J. Electrochem Co., vol. 141, No. 8, Aug. 1994.;  Tsu-Jae King et al., Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films, Journal of the Electrochemical Society, Electrochemical Society, Manchester, New Hampshire, U.S., vol. 141, No. 8, pp. 2235-2241, Aug. 1, 1994.;  Tsu-Jae King et al., Polycrystalline Silicon-Germanium Thin-Film Transistors, IEEE Transactions on Electron Devices, IEEE Inc., New York, NY U.S., vol. 41, No. 9, pp. 1581-1591, Sep. 1, 1994.;  Uncooled infrared focal - . . . , Laser Focus World, Dec. 1995.;  Wolf and Tauber, Silicon Processing for the VLSI Era, vol. 1: Process Technology, pp. 168-173, Lattice Press 1986, Sunset Beach, California.