A multi-zone inductively-coupled plasma source for producing a plasma medium, comprises (i) a first antenna structure for inductively coupling of radio-frequency electrical power to the plasma medium; and (ii) 1 additional antenna structure for inductively coupling of additional radio-frequency to the plasma medium. Components (i) and (ii) are operated together for providing a uniform plasma process on 1 substrate in a low pressure plasma processing apparatus.    Also claimed are (a) a method of producing a multi-zone inductively-coupled plasma in a plasma processing apparatus, by (i) producing a plasma from a plasma process gas using a first inductively-coupled antenna structure; (ii) separately producing a plasma from a plasma process gas using 1 additional inductively-coupled antenna structure; and (iii) operating the first antenna structure in concert with 1 additional antenna structure to establish a uniform plasma process on 1 substrate in the plasma process apparatus; and (b) a method of forming a multi-zone high-density inductively-coupled plasma source by (i) forming a first set of inductively coupled coil segments for producing a plasma from a plasma process gas; and (ii) forming 1 separate set of inductively-coupled coil segments for separately producing a plasma from a plasma process gas where the first set of individually controlled inductively-coupled coil segments and the 1 separate set of inductively-coupled coil segments associated for spatially resolved multi-zone operation to establish a uniform plasma process.    USE -   The plasma process apparatus is a semiconductor device manufacturing apparatus or a data storage device manufacturing apparatus (claimed). The source can also be used in forming flat panel displays, photovoltaic devices and multi-chip module devices.    ADVANTAGE -   The possibility of process contamination is eliminated, source hardware reliability and functionality are improved and the vacuum integrity and ultimate base pressure of the plasma system are improved.