(JP10116974-A)      The device includes an electric charge read out unit (110) which has one dimensional or two dimensional array, formed on first surface of a thin semiconductor plate (100). An accumulation layer (510) is formed at the second surface of the plate. Electrical signal is input or output into the electrical charge read out unit. The energy of EM or charged particle projected from the second surface of the plate is detected. A reinforcing member is arranged on the upper portion of the first surface of the thin plate, surrounding the electric charge read out unit.    The peripheral surface of the electric charge read out unit is removed and its opposing surface is exposed to the boundary surface of the reinforcing member. A field oxide film (200) with a contact hole is formed in the exposed area. A short polysilicon wiring (300) is formed on area which reaches contact hole area from the boundary surface of the reinforcing member. An aluminium wiring (600) is formed in the contact hole of the field oxide film and on the exposed region of the field oxide film. The short polysilicon wiring and the aluminium wiring are connected electrically.    ADVANTAGE -   Enables performing operation at high speed. Eases optimum manufacture.    (US6031274-A)      Back irradiation type light-receiving device has a charge-detecting section (110) on a first surface (201) of a thin Si plate (100) for detecting radiation incident on a second surface. The device comprises: a reinforcement member (400), preferably of BSG or BPSG, on the first surface; field oxide (200) contacting the reinforcement member around the charge detecting section; a poly-Si lead (300) formed on the charge-detecting section, extending from the section at the interface between the field oxide and the reinforcement member to an exposed region of the field oxide; and a lead (600) of Al or Al alloy or compound formed on the exposed region of the field oxide and directly connected to the poly-Si lead, the metal lead having a bonding pad (610) for external connection on the first surface. Method for making the device is claimed. In an embodiment, in a radiation sensing device, connections to a charge detecting section are poly-Si leads covered with oxide having vias for connection to metal leads. Method for making this device is claimed.    USE -   As back irradiation type CCD or active pixel sensor devices such as astronomical light-receiving devices.    ADVANTAGE -   the poly-Si and Al lead structure has very low resistance and easy processability so that high efficiency readout is obtained from a large light receiving area while enabling high speed operation. The Al leads may be formed after completion of all high temperature processing steps.