WO9852234-A1  HAQUE M S ET AL: "INTERACTION OF ALUMINUM WITH HYDROGENATED AMORPHOUS SILICON AT LOW TEMPERATURES" JOURNAL OF APPLIED PHYSICS, vol. 75, no. 8, 15 April 1994, pages 3928-3935, XP000447876;  LUQUE A ET AL: "INTERNAL QUANTUM EFFICIENCY OF BACK ILLUMINATED N+ PP+ SOLAR CELLS" REVUE DE PHYSIQUE APPLIQUEE, vol. 13, no. 12, December 1978, pages 629-632, XP000652547;  M.S. HAQUE ET AL.: "Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures" JOURNAL OF APPLIED PHYSICS., vol. 79, no. 10, 15 May 1996, pages 7529-7536, XP002073802 NEW YORK USUS6339013-B1  Al-Nuaimy, E.A., "Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors," Appl. Phys. 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S. et al., "Degradation and Failure Mechanisms of a-Si:H Solar Cells with Aluminum Contacts", IEEE First ECPEC, 1994, pp. 642-645.;  Haque, M. et al., "Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperature", Materials Research Society Symposium, vol. 258, 1992, pp. 1037-1042.;  Haque, M.S., et al, "Aluminum-induced crystallization and counter-doping of phosphrous-doped hydrogenated amorphous silicon at low temperatures" J. Appl. Phys. 79 (10), May 15, 1996, pp. 7529-7536.;  Haque, M.S., et al, "Aluminum-induced degradation and failure mechanisms of a-Si:H Solar Cells" Solar Energy Materials and Solar Cells, Jun. 1996, pp. 543-555.;  Haque, Naseem & Brown, "Interaction of aluminum with hydrogenated amorphous silicon at low temperatures," J. Appl. Phys. 75 (8) Apr. 15, 1994, pp. 3928-3935.;  Ishihara, S., et al., "Low-temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodes" J. Appl. Phys. 62 (3) Aug. 1, 1987, pp. 837-840.;  Konenkamp, R., et al, "Reversible Doping of Hydrogenated Amorphous Silicon" Solid State Communications, vol. 73, No. 5, pp. 323-326, 1990.;  Lathrop, J.W., "Accelerated Stress Testing of a-Si:H Cells" Proc. 2nd Int. Photovoltaic Science and Engineering Conference, Beijing, China, Aug., 1986, pp. 386-389.;  Lathrop, J.W., et al, "Failure Mechanisms in Amorphous Silicon Solar Cells".;  Luque, A. et al., "Internal Quantum Efficiency of Back Illuminated n& pp& Solar Cells" Revue De Physique Appliquee, Dec. 1978, pp. 629-632.;  Mayer & Lau, "Metallization and Phase Diagrams," McMillan Publishing 1988, pp. 276-283.;  Saito, N. et al, "Doping effects of aluminum on the properties of hydrogenated amorphous silicon-carbon allow films prepared by magnetron sputtering" Philosophical Magazine B, 1990,vol. 62, No. 5, pp. 527-536.;  Smith, P. M., et al, "Excimer laser crystallization and doping of silicon films on plastic substrates" Appl. Phys. Lett. 70 (3), Jan. 20, 1997, pp. 342-344.;  Willing, F., et al., "Thermal Stability of Interconnected a-Si:H Solar Modules".US6613653-B2  Al-Nuaimy, E.A.,"Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors," Appl. Phys. Lett. 69(25), Dec. 16, 1996, pp. 3857-3859.;  Baert, K.A. et al., "Amorphous-Silicon Solar Cells with Screen-Printed Metallization," IEEE Transactions on Electron Devices, vol. 37, No. 3, Mar. 1990, pp. 702-706.;  Berry, W.B., "Low Temperature Diffusivity for Aluminum and Silver in Amorphous Silicon.";  Czbatyj, W. et al., "Comparison of low temperature polysilicon crystal growth on low cost substances," J. Vac Sci Technol. A, vol. 9, No. 2, Mar./Apr. 1991, pp. 294-298.;  Delahoy, A.E., "Amorphous Silicon-Aluminum Materials," Research of High Efficiency Single Junction Monolithic Thin Film a-Si Solar Cells, Nov. 1985, pp. 13-20.;  Francis, David H., "Trends in Flip Chip and Advanced Interconnection," 1997 International Conference on Multichip Modules, pp. 25-28.;  Fukada, N., "Thermal Degradation of a-Si:H Solar Cells," Technical Digest of the International PVSEC-1, Kobe, Japan, pp. 229, 231.;  Gong et al., "Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-inductied crystallization", Nov. 1, 1987, Journal of Applied Physics, vol. 62, No. 9, pp. 3726-3732.*;  Haque, M. S. et al., "Degradation and Failure Mechanisms of a-Si: H Solar Cells with Aluminum Contacts, " IEEE First ECPEC, 1994, pp. 642-645.;  Haque, M. et al., "Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperatures," Materials Research Society Symposium, vol. 258, 1992, pp. 1037-1042.;  Haque, M.S. et al., "Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures," J. Appl. Phys. 79(10), May 15, 1996, pp. 7529-7536.;  Haque, M.S. et al., "Aluminum-induced degradation and failure mechanism of a-Si: H Solar Cells," Solar Energy Materials and Solar Cells, Jun. 1996, pp. 543-555.;  Haque, M.S. et al., "Interaction of aluminum with hydrogenated amorphous silicon at low temperatures," J. Appl. Phys. 75(8), Apr. 15, 1994, pp. 3928-3935.;  Ishihara, S. et al., "Low-temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodes," J. Appl. Phys. 62(3), Aug. 1, 1987, pp. 837-840.;  Konenkamp, R. et al., "Reversible Doping of Hydrogenated Amorphous Silicon," Solid State Communications, 1990, vol. 3, No. 5, pp. 323-326.;  Lapthrop, J.W., "Accelerated Stress Testing of a-Si:H Cells," Proc. 2nd Int. Photovoltaic Science and Engineering Conference, Beijing, China, Aug. 1986, pp. 386-389.;  Lathrop, J.W. et al., "Failure Mechanisms in Amorphous Silicon Solar Cells.";  Luque, A. et al., "Internal Quantum Efficiency of Back Illuminated n&pp& Solar Cells," Revue De Physique Appliquee, Dec. 1978, pp. 629-632.;  Mayer & Lau, "Metallization and Phase Diagrams," McMillan Publishing, 1998, pp. 276-283.;  Radnoczi et al., "Al induced crystallization of a-Si", May 1, 1991, Journal of Applied Physics vol. 69, No. 9, pp. 6394-6399.*;  Saito, N. et al., "Doping effects of aluminum on the properties of hydrogenated amorphous silicon-carbon alloy films prepared by magnetron sputtering," Philosophical Magazine B, 1990, vol. 62, No. 5, pp. 527-536.;  Smith, P.M. et al., "Excimer laser crystallization and doping of silicon films on plastic substrates," Appl. Phys. Lett. 70(3), Jan. 20, 1997, pp. 342-344.;  Willing, F. et al., "Thermal Stability of Interconnected a-Si : H Solar Modules".US6844248-B2  Al-Nuaimy, E.A., "Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors," Appl. Phys. Lett. 69( 25), Dec. 16, 1996, pp. 3857-3859.;  Baert, K.A. et al., "Amorphous-Silicon Solar Cells with Screen-Printed Metallization," IEEE Transactions on Electron Devices, vol. 37, No. 3, Mar. 1990, pp. 702-706.;  Berry, W.B., "Low Temperature Diffusivity for Aluminum and Silver in Amorphous Silicon.";  Czbatyj, W. et al., "Comparison of low temperature polysilicon crystal growth on low cost substances," J. Vac Sci Technol. A, vol. 9, No. 2, Mar./Apr. 1991, pp. 294-298.;  Delahoy, A.E., "Amorphous Silicon-Aluminum Materials," Research on High Efficiency Single Junction Monolithic Thin Film a-Si Solar Cells, Nov. 1985, pp. 13-20.;  Francis, David H., "Trends in Flip Chip and Advanced Interconnection," 1997 International Conference on Multichip Modules, pp. 25-28.;  Fukada, N., "Thermal Degradation of a-Si:H Solar Cells," Technical Digest of the International PVSEC-1, Kobe, Japan, pp. 229,231.;  Gong et al., "A1-doped and Sb-doped polycrystalline silicon obtained by means of metal-inductied crystallization", Nov. 1, 1987, Journal of Applied Physics, vol. 62, No. 9, pp. 3726-3732.;  Haque, M. S. et al., "Degradation and Failure Mechanisms of a-Si:H Solar Cells with Aluminum Contacts," IEEE First ECPEC, 1994, pp. 642-645.;  Haque, M. et al., "Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperatures," Materials Research Society Symposium, vol. 258, 1992, pp. 1037-1042.;  Haque, M.S. et al., "Aluminum-induced crystallization and couter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures," J. Appl. Phys. 79( 10), May 15, 1996, pp. 7529-7536.;  Haque, M.S. et al., "Aluminum-induced degradation and failure mechanism of a-Si:H Solar Cells," Solar Energy-Materials and Solar Cells, Jun. 1996, pp. 543-555.;  Haque, M.S. et al., "Interaction of aluminum with hydrogenated amorphous silicon at low temperatures," J. Appl. Phys. 75( 8), Apr. 15, 1994, pp. 3928-3935.;  Ishihara, S. et al., "Low-temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodes," J. Appl. Phys. 62( 3), Aug. 1, 1987, pp. 837-840.;  Konenkamp, R. et al., "Reversible Doping of Hydrogenated Amorphous Silicon," Solid State Communications, 1990, vol. 3, No. 5, pp. 323-326.;  Lathrop, J.W. et al., "Failure Mechanisms in Amorphous Silicon Solar Cells.";  Lathrop, J.W., "Accelerated Stress Testing of a-Si:H Cells," Proc. 2nd Int. Photovoltaic Science and Engineering Conference, Beijing, China, Aug. 1986, pp. 386-389.;  Luque, A. et al., "Internal Quantum Efficiency of Back Illuminated n+ pp+ Solar Cells," Revue De Physique Appliquee, Dec. 1978, pp. 629-632.;  Mayer & Lau, "Metallization and Phase Diagrams," McMillan Publishing, 1998, pp. 276-283.;  Radnoczi et al., "A1 induced and Sb-doped crystallization of a-Si", May 1, 1991, Journal of Applied Physics, vol. 69, No. 9, pp. 6394-6399.;  Saito, N. et al., "Doping effects of aluminum on the properties of hydrogenated amorphous silicon-carbon alloy films prepared by magnetron sputtering," Philosophical Magazine B, 1990, vol. 62, No. 5, pp. 527-536.;  Smith, P.M. et al., "Excimer laser crystallization and doping of silicon films on plastic substrates," Appl. Phys. Lett. 70( 3), Jan. 20, 1997, pp. .342-344.;  Willing, F. et al., "Thermal Stability of Interconnected a-Si:H Solar Modules."