(WO9858413-A1)      The design of a thin film semiconductor solar cell comprises designing the p-type layer to consist of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Preferably the design of the n-layer consists of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Also claimed is a process for providing the p-type layer and the n-type layer according to the design.    USE -   Processes and designs for improved thin film silicon solar cells.    ADVANTAGE -   A band gap engineering design includes a p-type layer (or an n-type layer) which has a spatially varying band gap as well as a spatially varying dopant concn. The desired varying properties can be obtained under continuous deposition conditions.    (EP992071-A1)      The design of a thin film semiconductor solar cell comprises designing the p-type layer to consist of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Preferably the design of the n-layer consists of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Also claimed is a process for providing the p-type layer and the n-type layer according to the design.    USE -   Processes and designs for improved thin film silicon solar cells.    ADVANTAGE -   A band gap engineering design includes a p-type layer (or an n-type layer) which has a spatially varying band gap as well as a spatially varying dopant concn. The desired varying properties can be obtained under continuous deposition conditions.    (US6242687-B1)      The design of a thin film semiconductor solar cell comprises designing the p-type layer to consist of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Preferably the design of the n-layer consists of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Also claimed is a process for providing the p-type layer and the n-type layer according to the design.    USE -   Processes and designs for improved thin film silicon solar cells.    ADVANTAGE -   A band gap engineering design includes a p-type layer (or an n-type layer) which has a spatially varying band gap as well as a spatially varying dopant concn. The desired varying properties can be obtained under continuous deposition conditions.    (KR2001013727-A)      The design of a thin film semiconductor solar cell comprises designing the p-type layer to consist of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Preferably the design of the n-layer consists of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Also claimed is a process for providing the p-type layer and the n-type layer according to the design.    USE -   Processes and designs for improved thin film silicon solar cells.    ADVANTAGE -   A band gap engineering design includes a p-type layer (or an n-type layer) which has a spatially varying band gap as well as a spatially varying dopant concn. The desired varying properties can be obtained under continuous deposition conditions.    (KR569823-B1)      The design of a thin film semiconductor solar cell comprises designing the p-type layer to consist of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Preferably the design of the n-layer consists of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way. Also claimed is a process for providing the p-type layer and the n-type layer according to the design.    USE -   Processes and designs for improved thin film silicon solar cells.    ADVANTAGE -   A band gap engineering design includes a p-type layer (or an n-type layer) which has a spatially varying band gap as well as a spatially varying dopant concn. The desired varying properties can be obtained under continuous deposition conditions.