(DE19746893-A1)      The component manufacturing method uses a radiation emission    of detection semiconductor chip (1) secured to a socket of a    plastics base (4) and connected to at least two electrode    connections (2,3) provided by thin-film conductor paths deposited on the surface of the base.    The conductor paths are applied via a galvanic deposition process and structured via a laser etching process, before deposition of a thin layer of an auxiliary material for increasing the thickness of selected areas with the remaining areas removed.    USE -   For surface-mounted optoelectronic component manufacture, e.g. either emitting or receiving visible or IR radiation.    ADVANTAGE -   Reduced manufacturing costs and overall height of    obtained component.    (CN1216868-A)      The component manufacturing method uses a radiation emission    of detection semiconductor chip (1) secured to a socket of a    plastics base (4) and connected to at least two electrode    connections (2,3) provided by thin-film conductor paths deposited on the surface of the base.    The conductor paths are applied via a galvanic deposition process and structured via a laser etching process, before deposition of a thin layer of an auxiliary material for increasing the thickness of selected areas with the remaining areas removed.    USE -   For surface-mounted optoelectronic component manufacture, e.g. either emitting or receiving visible or IR radiation.    ADVANTAGE -   Reduced manufacturing costs and overall height of    obtained component.    (JP11195794-A)      The component manufacturing method uses a radiation emission    of detection semiconductor chip (1) secured to a socket of a    plastics base (4) and connected to at least two electrode    connections (2,3) provided by thin-film conductor paths deposited on the surface of the base.    The conductor paths are applied via a galvanic deposition process and structured via a laser etching process, before deposition of a thin layer of an auxiliary material for increasing the thickness of selected areas with the remaining areas removed.    USE -   For surface-mounted optoelectronic component manufacture, e.g. either emitting or receiving visible or IR radiation.    ADVANTAGE -   Reduced manufacturing costs and overall height of    obtained component.    (JP3069082-B2)      The component manufacturing method uses a radiation emission    of detection semiconductor chip (1) secured to a socket of a    plastics base (4) and connected to at least two electrode    connections (2,3) provided by thin-film conductor paths deposited on the surface of the base.    The conductor paths are applied via a galvanic deposition process and structured via a laser etching process, before deposition of a thin layer of an auxiliary material for increasing the thickness of selected areas with the remaining areas removed.    USE -   For surface-mounted optoelectronic component manufacture, e.g. either emitting or receiving visible or IR radiation.    ADVANTAGE -   Reduced manufacturing costs and overall height of    obtained component.    (TW396640-A)      The component manufacturing method uses a radiation emission    of detection semiconductor chip (1) secured to a socket of a    plastics base (4) and connected to at least two electrode    connections (2,3) provided by thin-film conductor paths deposited on the surface of the base.    The conductor paths are applied via a galvanic deposition process and structured via a laser etching process, before deposition of a thin layer of an auxiliary material for increasing the thickness of selected areas with the remaining areas removed.    USE -   For surface-mounted optoelectronic component manufacture, e.g. either emitting or receiving visible or IR radiation.    ADVANTAGE -   Reduced manufacturing costs and overall height of    obtained component.