(DE19727441-A1)      Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating.    Also claimed is the apparatus for carrying out the above process, including spaced electrodes (3) having heaters (5).    USE -   For cutting up polycrystalline or single crystal semiconductor materials (preferably silicon), used for manufacturing solar cells and electronic devices, prior to crucible melting and single crystal growth.    ADVANTAGE -   The process permits contamination-free cutting up of semiconductor material without the use of high temperatures or mechanical crushing tools. Additionally, the process allows a wide variation in cut piece size, is inexpensive and is non-polluting since no waste water is produced.    (JP11042635-A)      Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating.    Also claimed is the apparatus for carrying out the above process, including spaced electrodes (3) having heaters (5).    USE -   For cutting up polycrystalline or single crystal semiconductor materials (preferably silicon), used for manufacturing solar cells and electronic devices, prior to crucible melting and single crystal growth.    ADVANTAGE -   The process permits contamination-free cutting up of semiconductor material without the use of high temperatures or mechanical crushing tools. Additionally, the process allows a wide variation in cut piece size, is inexpensive and is non-polluting since no waste water is produced.    (JP2961694-B2)      Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating.    Also claimed is the apparatus for carrying out the above process, including spaced electrodes (3) having heaters (5).    USE -   For cutting up polycrystalline or single crystal semiconductor materials (preferably silicon), used for manufacturing solar cells and electronic devices, prior to crucible melting and single crystal growth.    ADVANTAGE -   The process permits contamination-free cutting up of semiconductor material without the use of high temperatures or mechanical crushing tools. Additionally, the process allows a wide variation in cut piece size, is inexpensive and is non-polluting since no waste water is produced.    (US6024306-A)      Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating.    Also claimed is the apparatus for carrying out the above process, including spaced electrodes (3) having heaters (5).    USE -   For cutting up polycrystalline or single crystal semiconductor materials (preferably silicon), used for manufacturing solar cells and electronic devices, prior to crucible melting and single crystal growth.    ADVANTAGE -   The process permits contamination-free cutting up of semiconductor material without the use of high temperatures or mechanical crushing tools. Additionally, the process allows a wide variation in cut piece size, is inexpensive and is non-polluting since no waste water is produced.    (TW387823-A)      Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating.    Also claimed is the apparatus for carrying out the above process, including spaced electrodes (3) having heaters (5).    USE -   For cutting up polycrystalline or single crystal semiconductor materials (preferably silicon), used for manufacturing solar cells and electronic devices, prior to crucible melting and single crystal growth.    ADVANTAGE -   The process permits contamination-free cutting up of semiconductor material without the use of high temperatures or mechanical crushing tools. Additionally, the process allows a wide variation in cut piece size, is inexpensive and is non-polluting since no waste water is produced.    (EP887105-B1)      Cutting up semiconductor material comprises direct current passage by pulsed high voltage application using electrodes which consist of the semiconductor material (preferably silicon) and which are made conductive by heating.    Also claimed is the apparatus for carrying out the above process, including spaced electrodes (3) having heaters (5).    USE -   For cutting up polycrystalline or single crystal semiconductor materials (preferably silicon), used for manufacturing solar cells and electronic devices, prior to crucible melting and single crystal growth.    ADVANTAGE -   The process permits contamination-free cutting up of semiconductor material without the use of high temperatures or mechanical crushing tools. Additionally, the process allows a wide variation in cut piece size, is inexpensive and is non-polluting since no waste water is produced.