TECHNOLOGY FOCUS - POLYMERS - Preferred Process: A polyetheretherketone, polyethersulfone, polyphenylsulfone, polyphenylenesulfide and/or polyphenylene oxide is reacted with a prim., sec. or tert. nitrogen containing polymer. The polymeric sulfonic acid salt has a repeating aromatic core structure of formula (R1) or (R2). A solution of a polymeric sulfonic acid in a dipolar aprotic solvent is mixed with an equivalent amount (w.r.t. sulfonic acid groups) of a prim., sec. or tert. amine followed by the dissolution of a polymer having prim., sec., or tert. basic nitrogen groups in the solution.Preferred Materials: The solvent is N-methylpyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, sulfolane or dimethyl sulfoxide. The polymer is a poly(etheretherketone) or poly(ethersulfone) as a support for the sulfonic acid, sulfonic acid salt or prim., sec., or tert basic nitrogen groups. The sulfonic acid salt isa poly(etheretherketone) with ((R5-R2-R5-R2-R7)n; x=1, R4=H), poly(ethersulfone)((R1-R5-R2-R6-R2-R5)n; R2:x=1, R4=H), poly(ethersulfone)((R2-R6-R2-R5)n;R2:x=1, R4=H),poly(phenylsulfone) (((R2)2-R5-R2-R6-R2)n; R2:x=2, R4=H);polyetherethersulfone ((R5-R2-R5-R2-R6)n-(R5-R2-R6-R2)m: x=1, R4=H, n/m=0, 18), poly(phenylensulfide)((R2-R8)n; R2:x=1, R4=H) and/orpoly(phenylenoxide) ((R2-R5)n; R4=CH3).R3 = H, trifluoromethyl or CnH2n+1;n = 1-10, preferably 1;R4 = H, CnH2n+1; preferably methyl or phenyl, x=1-3, optionally containing bridging groups R5 or R6;R5 = -O-;R6 = -SO2 EXAMPLE - A mixture of 3 g water soluble sulfonated polysulfone (SO3Li-form, ion-exchange capacity 2.5 meq SO3H/g polymer) in 17 g N,N-dimethylacetamide and 0.322 g of a 50 wt.% aqueous polyethyleneimine solution was cast on to a glass plate as a thin film and the solvent removed at 125 degreesC. The coated plate was soaked in water to remove the film which was treated for 48 hours in 1N HCl and 48 hours in deionized water at 70 degreesC.    The resulting 110 micron thick membrane had an ion exchange capacity of 1.65 meq SO3H/g polymer, 160% swelling (H2O, RT, H+ form), surface resistance of 0.0623 ohm.cm2 (0.5N HCl, RT, H+ form) and specific resistance of 5.67 ohm.cm.