(DE19735378-A1)      Production of Si granulate having a Cl contaminant of 50 wt.-ppm comprises depositing elemental Si on Si particles in a fluidised bed reactor having a heating and a reaction zone. The Si particles are fluidised to a fluidised bed in a heating zone using an inert Si-free carrier gas, heated using microwave energy and then subjected in the reaction zone to a reaction gas comprising Si source gas and a carrier gas. The average temperature of the reaction gas in the reaction zone lies 900C as it flows through the fluidised Si particles.    USE -   In the production of electronic components and solar cells.    ADVANTAGE -   Si Granulate containing 50 wt.-ppm Cl is produced.    (JP11139817-A)      Production of Si granulate having a Cl contaminant of 50 wt.-ppm comprises depositing elemental Si on Si particles in a fluidised bed reactor having a heating and a reaction zone. The Si particles are fluidised to a fluidised bed in a heating zone using an inert Si-free carrier gas, heated using microwave energy and then subjected in the reaction zone to a reaction gas comprising Si source gas and a carrier gas. The average temperature of the reaction gas in the reaction zone lies 900C as it flows through the fluidised Si particles.    USE -   In the production of electronic components and solar cells.    ADVANTAGE -   Si Granulate containing 50 wt.-ppm Cl is produced.    (CN1216288-A)      Production of Si granulate having a Cl contaminant of 50 wt.-ppm comprises depositing elemental Si on Si particles in a fluidised bed reactor having a heating and a reaction zone. The Si particles are fluidised to a fluidised bed in a heating zone using an inert Si-free carrier gas, heated using microwave energy and then subjected in the reaction zone to a reaction gas comprising Si source gas and a carrier gas. The average temperature of the reaction gas in the reaction zone lies 900C as it flows through the fluidised Si particles.    USE -   In the production of electronic components and solar cells.    ADVANTAGE -   Si Granulate containing 50 wt.-ppm Cl is produced.    (US6007869-A)      Production of Si granulate having a Cl contaminant of 50 wt.-ppm comprises depositing elemental Si on Si particles in a fluidised bed reactor having a heating and a reaction zone. The Si particles are fluidised to a fluidised bed in a heating zone using an inert Si-free carrier gas, heated using microwave energy and then subjected in the reaction zone to a reaction gas comprising Si source gas and a carrier gas. The average temperature of the reaction gas in the reaction zone lies 900C as it flows through the fluidised Si particles.    USE -   In the production of electronic components and solar cells.    ADVANTAGE -   Si Granulate containing 50 wt.-ppm Cl is produced.    (TW372934-A)      Production of Si granulate having a Cl contaminant of 50 wt.-ppm comprises depositing elemental Si on Si particles in a fluidised bed reactor having a heating and a reaction zone. The Si particles are fluidised to a fluidised bed in a heating zone using an inert Si-free carrier gas, heated using microwave energy and then subjected in the reaction zone to a reaction gas comprising Si source gas and a carrier gas. The average temperature of the reaction gas in the reaction zone lies 900C as it flows through the fluidised Si particles.    USE -   In the production of electronic components and solar cells.    ADVANTAGE -   Si Granulate containing 50 wt.-ppm Cl is produced.    (JP3122643-B2)      Production of Si granulate having a Cl contaminant of 50 wt.-ppm comprises depositing elemental Si on Si particles in a fluidised bed reactor having a heating and a reaction zone. The Si particles are fluidised to a fluidised bed in a heating zone using an inert Si-free carrier gas, heated using microwave energy and then subjected in the reaction zone to a reaction gas comprising Si source gas and a carrier gas. The average temperature of the reaction gas in the reaction zone lies 900C as it flows through the fluidised Si particles.    USE -   In the production of electronic components and solar cells.    ADVANTAGE -   Si Granulate containing 50 wt.-ppm Cl is produced.