(US5880490-A)      A radiation detector responsive to impinging radiation comprises an intrinsic semiconductor layer coupled to a reference potential and capable of ionization from the impinging radiation to form freed charge carriers. A first doped region is formed within the intrinsic semiconductor layer and doped to a first conductivity type. A second doped region is formed within the first doped region and doped to a second conductivity type opposite the first conductivity type, wherein the junction between the second doped region and the first doped region defines a junction. A resistive layer is formed on top of the second doped region, and a conductive layer is formed on top of the resistive layer and coupled to a bias potential. Also claimed is a radiation detector array including a plurality of voxels, and an imaging system.    USE -   Improved radiation detector with self-limiting amplification properties, useful in nuclear medicine, science or industry for detecting radiation such as x-rays, gamma rays, electron beams, or neutron beams.    ADVANTAGE -   The solid state detector can be used to produce robust, simple and relatively inexpensive instruments with self-limiting amplification properties.    (EP1004144-A1)      A radiation detector responsive to impinging radiation comprises an intrinsic semiconductor layer coupled to a reference potential and capable of ionization from the impinging radiation to form freed charge carriers. A first doped region is formed within the intrinsic semiconductor layer and doped to a first conductivity type. A second doped region is formed within the first doped region and doped to a second conductivity type opposite the first conductivity type, wherein the junction between the second doped region and the first doped region defines a junction. A resistive layer is formed on top of the second doped region, and a conductive layer is formed on top of the resistive layer and coupled to a bias potential. Also claimed is a radiation detector array including a plurality of voxels, and an imaging system.    USE -   Improved radiation detector with self-limiting amplification properties, useful in nuclear medicine, science or industry for detecting radiation such as x-rays, gamma rays, electron beams, or neutron beams.    ADVANTAGE -   The solid state detector can be used to produce robust, simple and relatively inexpensive instruments with self-limiting amplification properties.    (JP2001511605-W)      A radiation detector responsive to impinging radiation comprises an intrinsic semiconductor layer coupled to a reference potential and capable of ionization from the impinging radiation to form freed charge carriers. A first doped region is formed within the intrinsic semiconductor layer and doped to a first conductivity type. A second doped region is formed within the first doped region and doped to a second conductivity type opposite the first conductivity type, wherein the junction between the second doped region and the first doped region defines a junction. A resistive layer is formed on top of the second doped region, and a conductive layer is formed on top of the resistive layer and coupled to a bias potential. Also claimed is a radiation detector array including a plurality of voxels, and an imaging system.    USE -   Improved radiation detector with self-limiting amplification properties, useful in nuclear medicine, science or industry for detecting radiation such as x-rays, gamma rays, electron beams, or neutron beams.    ADVANTAGE -   The solid state detector can be used to produce robust, simple and relatively inexpensive instruments with self-limiting amplification properties.