TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: A stacked organic light emitting device comprising first and second electroluminescence-producing heterostructures, at least one of which contains the above cathode. Preferred Heterostructure: The heterostructure comprises the sequence: (A) (i) a substrate; (ii) a cathode layer; (iii) an electron transporting layer; (iv) a hole transporting layer; and (v) an anode layer; or (B) (i) a substrate; (ii) an anode layer; (iii) a hole transporting layer; (iv) an electron transporting layer; and (v) a cathode layer. The heterostructure optionally further comprises a charge carrier layer, which is an emissive layer, a separate emissive layer of a double heterostructure, or an electron transporting layer of a single heterostructure placed between the cathode and an electron transporting layer. Optionally, the charge carrier layer comprises the compound doped with a dye. The electrically conductive nonmetallic layer may further contain an emissive layer containing a phosphorescent dopant compound. The heterostructure further comprises a hole transporting layer having a glass structure comprising a compound having a symmetric molecular structure wherein the end groups of the molecule are hole transporting amine moieties having an unsaturated linkage between two arenes. The compound having a glass structure is the predominant component or a dopant in the hole transporting layer. Preferred Conditions: The cathode has an electrically conductive nonmetallic layer comprising a wide band gap semiconductor having a band gap at least 1 eV and a transmission at least 50% for incident and admitted radiation. The phosphorescent dopant compound has a phosphorescent lifetime at most 10 microseconds.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Materials: The semiconductive organic layer contains a polyacene compound, preferably a phthalocyanine. The charge carrier layer contains a compound having at least 1 electron transporting moiety, which is a 2-methyl-8-quinolinolato ligand coordinated with aluminum, gallium or indium, and at least one hole transporting moiety (preferably an amine, triarylamine derivatized phenoxide). Especially, the compound has two 2-methyl-8-quinolinolato ligands coordinated with Al as electron transporting moieties, and one triarylamine derivatized phenoxide as a hole transporting moiety. The heterostructure further contains an emissive layer containing a dopant compound of formula (C-I)R = hydrogen or a donor or acceptor group relative to hydrogen;R' = alkyl or optionally substituted aryl;R1 and R2 = H or are joined to form a fused aryl ring;X = O, alkyl, optionally substituted aryl or NR5;R5 = H or optionally substituted alkyl;Z1 and Z2 = carbon or nitrogen;Y = metal atom (M) when Z1 and Z2 both = N and Y = O, S or NR6 when Z1 or Z2 = C;R6 = optionally substituted alkyl.Preferably in (C-I);Z1 = C;Z2 = NX = O; andY = absent,providing the dopant compound of formula (C-II)The phosphorescent dopant compound is of formula (D-I):X = C or N;R8, R9 and R10 = H or optionally substituted alkyl or aryl or R9 and R10 may be combined to form a fused ring;M = a divalent, trivalent or tetravalent metal;a, b and c = 0-1, provided that when X = C then a = 1, when X = N then a = 0, when c = 1 then b = 0 and when b = 1, c = 0.The phosphorescent dopant compound is of formula (E-II) or (E-III)R1, R2, R3 and R4 = alkyl, aryl ( preferably unsubstituted phenyl) or H, provided that at least 1 R-group is different to at least 1 other R-group;R5 and R6 = electron donor or electron acceptor groups.The compound having a glass structure is of formula (Q) (T) or (U)A = 1 or 2 phenyl groups;R1 and R2 = H or optionally substituted alkyl or phenyl and R1 and R2 may be bridged SPECIFIC COMPOUNDS - The semiconductive organic layer contains copper or zinc phthalocyanine. The charge carrier layer contains bis(2-methyl-8-quinolinolato)(p-(N-phenyl-2-naphthylamino)phenolatolaluminum(III), bis(2-methyl-8-quinolinolato)(p-carbazolphenolato)aluminum(III) or bis(2-methyl-8-quinolinolato)(m-carbazolphenolato)aluminum(III). The dopant compounds is of formula, (C-III), (C-IV), (C-V), (C-VI), (CVII) or (C-VIII)    The phosphorescent dopant compound is platinum octaethylporphine of formula (P)    The phosphorescent dopant compound is doped into an electron transporting layer containing tris-(8-hydroxyquinoline)-aluminum or N,N'-diphenyl-N,N'-bis(3-methylpheny)-1,1'-biphenyl-4,4'-diamine. The compound having a glass structure is of formula (R), (S), (V) or (W)    EXAMPLE - OLEDs were prepared using known procedures except that the OLEDs included a nonmetallic ITO cathode layer rather than a metallic cathode layer. In addition, an electron injecting interface layer was present between the ITO cathode and an Alq3 electron transporting layer. The ITO/Borosilicate substrates that were obtained commercially had an ITO thickness of about 1500 Angstrom. The organic layers were thermally deposited at 1x10-6 torr. The alpha-NPD layer was deposited at a thickness of 350 Angstrom, the Alq3 electron transporting layer was deposited at a thickness of 450 Angstrom and the copper phthalocyanine (CuPc) or zinc phthalocyanine (ZnPc) was deposited at a thickness of about 60 Angstrom. The top ITO cathode layer was RF sputter-deposited at low powers and had a thickness of 650 Angstrom. OLEDs were also prepared containing a CBP layer between the CuPc layer and the Alq3 layer. Such OLEDs showed performance characteristics comparable to the OLEDs in which no CBP layer was present. The devices were characterized by measuring the current-voltage, luminance-current, electroluminescence spectra and the transmission, reflection an absorption spectra. The results were compared with a standard OLED which included a metallic Mg:Ag cathode layer, an electron transporting layer, a hole transporting layer, an anode layer and a substrate. The alpha-NPD hole transporting layer had a thickness of about 350 Angstrom, the Alq3 electron transporting layer had a thickness of 450 Angstrom and the Mg:Ag cathode layer had a thickness of 1500 Angstrom.