(CN1213186-A)      A method for forming a compound film comprises preparing a source material including Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, Group IB-IIIA alloys constituting &gt;50 molar% of the Group IB elements and &gt;50 molar% of the Group IIIA elements in the source material. The source material is deposited on a base in the form of a precursor film, and the film heated in a suitable atmos. to form a film including a Group IB-IIA-VIA compound. Also claimed are methods for fabricating an electronic device, and a solar cell.    USE -   Methods of making structures incorporating ternary and higher order compound semiconductors for use in electronic devices, e.g. photovoltaic devices.    ADVANTAGE -   Provides Group IB-IIA-VIA (and related) compound films on large area substrates with good compositional uniformity and superior electronic properties.    (US5985691-A)      A method for forming a compound film comprises preparing a source material including Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, Group IB-IIIA alloys constituting &gt;50 molar% of the Group IB elements and &gt;50 molar% of the Group IIIA elements in the source material. The source material is deposited on a base in the form of a precursor film, and the film heated in a suitable atmos. to form a film including a Group IB-IIA-VIA compound. Also claimed are methods for fabricating an electronic device, and a solar cell.    USE -   Methods of making structures incorporating ternary and higher order compound semiconductors for use in electronic devices, e.g. photovoltaic devices.    ADVANTAGE -   Provides Group IB-IIA-VIA (and related) compound films on large area substrates with good compositional uniformity and superior electronic properties.    (JP11340482-A)      A method for forming a compound film comprises preparing a source material including Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, Group IB-IIIA alloys constituting &gt;50 molar% of the Group IB elements and &gt;50 molar% of the Group IIIA elements in the source material. The source material is deposited on a base in the form of a precursor film, and the film heated in a suitable atmos. to form a film including a Group IB-IIA-VIA compound. Also claimed are methods for fabricating an electronic device, and a solar cell.    USE -   Methods of making structures incorporating ternary and higher order compound semiconductors for use in electronic devices, e.g. photovoltaic devices.    ADVANTAGE -   Provides Group IB-IIA-VIA (and related) compound films on large area substrates with good compositional uniformity and superior electronic properties.