(EP1029110-A1)   NOVELTY - The annealing system comprises a microwave generator providing microwaves to area within interior of the processing chamber, the microwaves having a frequency at which the film is absorptive but the substrate is not, and a wave-guide distributing microwaves over the film surface and a providing uniform dosage of microwaves. The frequency is 2.45 GHz.    USE - For annealing amorphous films, particularly for annealing amorphous Si films so they are transformed into polysilicon films for use in thin film transistors employed for active matrix liquid crystal displays, and in solar cells.    ADVANTAGE - Annealing of amorphous Si films and transforming amorphous Si films into polysilicon films is achieved without using complex laser annealing, thermal annealing, or lamp annealing systems. A higher quality anneal is achieved as by only heating the deposited film.    (EP1042532-A1)   NOVELTY - The annealing system comprises a microwave generator providing microwaves to area within interior of the processing chamber, the microwaves having a frequency at which the film is absorptive but the substrate is not, and a wave-guide distributing microwaves over the film surface and a providing uniform dosage of microwaves. The frequency is 2.45 GHz.    USE - For annealing amorphous films, particularly for annealing amorphous Si films so they are transformed into polysilicon films for use in thin film transistors employed for active matrix liquid crystal displays, and in solar cells.    ADVANTAGE - Annealing of amorphous Si films and transforming amorphous Si films into polysilicon films is achieved without using complex laser annealing, thermal annealing, or lamp annealing systems. A higher quality anneal is achieved as by only heating the deposited film.    (US6172322-B1)   NOVELTY - The annealing system comprises a microwave generator providing microwaves to area within interior of the processing chamber, the microwaves having a frequency at which the film is absorptive but the substrate is not, and a wave-guide distributing microwaves over the film surface and a providing uniform dosage of microwaves. The frequency is 2.45 GHz.    USE - For annealing amorphous films, particularly for annealing amorphous Si films so they are transformed into polysilicon films for use in thin film transistors employed for active matrix liquid crystal displays, and in solar cells.    ADVANTAGE - Annealing of amorphous Si films and transforming amorphous Si films into polysilicon films is achieved without using complex laser annealing, thermal annealing, or lamp annealing systems. A higher quality anneal is achieved as by only heating the deposited film.