(CN1244031-A)   NOVELTY - Bias power of direct current power and/or high frequency power of radio frequency (RF) are supplied together with high frequency power of very high frequency to discharge chamber (102). Direct current component of electric current flowing into bias electrode (113) is controlled, in terms of current density based on area of an inner wall of chamber (102).    USE - Process and apparatus for forming a semiconductor layer on a substrate especially a semiconductor layer of the non-monocrystalline silicon type such as amorphous silicon, amorphous silicon germanium, amorphous silicon carbide or amorphous silicon which is used in solar cells, photosensitive drums for photocopying machines, image sensors for facsimiles, thin film transistors for liquid crystal display devices etc..    ADVANTAGE - A good-quality semiconductor layer can be deposited over a large area at a high speed.    (JP2000104174-A)   NOVELTY - Bias power of direct current power and/or high frequency power of radio frequency (RF) are supplied together with high frequency power of very high frequency to discharge chamber (102). Direct current component of electric current flowing into bias electrode (113) is controlled, in terms of current density based on area of an inner wall of chamber (102).    USE - Process and apparatus for forming a semiconductor layer on a substrate especially a semiconductor layer of the non-monocrystalline silicon type such as amorphous silicon, amorphous silicon germanium, amorphous silicon carbide or amorphous silicon which is used in solar cells, photosensitive drums for photocopying machines, image sensors for facsimiles, thin film transistors for liquid crystal display devices etc..    ADVANTAGE - A good-quality semiconductor layer can be deposited over a large area at a high speed.    (US6287943-B1)   NOVELTY - Bias power of direct current power and/or high frequency power of radio frequency (RF) are supplied together with high frequency power of very high frequency to discharge chamber (102). Direct current component of electric current flowing into bias electrode (113) is controlled, in terms of current density based on area of an inner wall of chamber (102).    USE - Process and apparatus for forming a semiconductor layer on a substrate especially a semiconductor layer of the non-monocrystalline silicon type such as amorphous silicon, amorphous silicon germanium, amorphous silicon carbide or amorphous silicon which is used in solar cells, photosensitive drums for photocopying machines, image sensors for facsimiles, thin film transistors for liquid crystal display devices etc..    ADVANTAGE - A good-quality semiconductor layer can be deposited over a large area at a high speed.