(JP2000174304-A)   NOVELTY - The cell includes a light receiving surface of a semiconductor substrate (1). A dielectric layer (10) is formed between a back surface electrode (5) and the semiconductor substrate (1). A number of openings (11) are formed in the dielectric layer for establishing an electrical connection between the back surface electrode and the semiconductor substrate. A ratio of an area occupied by the openings relative to an area of the back surface is within a range from 0.25 % to 30 %.    USE - In a solar cell for space application.    ADVANTAGE - Good electrical output power characteristics by preventing recombination of the carriers, thus the output power may increase and the conversion efficiency may be improved. Solar light absorptivity is reduced, the operating temperature decreases and the maximum output power at the operating temperature is further improved. Excellent radiation hardness.    (US6229084-B1)   NOVELTY - The cell includes a light receiving surface of a semiconductor substrate (1). A dielectric layer (10) is formed between a back surface electrode (5) and the semiconductor substrate (1). A number of openings (11) are formed in the dielectric layer for establishing an electrical connection between the back surface electrode and the semiconductor substrate. A ratio of an area occupied by the openings relative to an area of the back surface is within a range from 0.25 % to 30 %.    USE - In a solar cell for space application.    ADVANTAGE - Good electrical output power characteristics by preventing recombination of the carriers, thus the output power may increase and the conversion efficiency may be improved. Solar light absorptivity is reduced, the operating temperature decreases and the maximum output power at the operating temperature is further improved. Excellent radiation hardness.    (US2001011553-A1)   NOVELTY - The cell includes a light receiving surface of a semiconductor substrate (1). A dielectric layer (10) is formed between a back surface electrode (5) and the semiconductor substrate (1). A number of openings (11) are formed in the dielectric layer for establishing an electrical connection between the back surface electrode and the semiconductor substrate. A ratio of an area occupied by the openings relative to an area of the back surface is within a range from 0.25 % to 30 %.    USE - In a solar cell for space application.    ADVANTAGE - Good electrical output power characteristics by preventing recombination of the carriers, thus the output power may increase and the conversion efficiency may be improved. Solar light absorptivity is reduced, the operating temperature decreases and the maximum output power at the operating temperature is further improved. Excellent radiation hardness.