WO200052764-A  C. ROST ET AL.: "Transparent p-type semiconductors for the ETA solar cell with Extremely Thin Absorber" PROCEEDINGS OF THE 2ND WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, Bd. 1, 6. - 10. Juli 1998, Seiten 212-215, XP002141360 Vienna, Austria;  ERNST K ET AL: "Characterization of II-VI compounds on porous substrates" 1999 E-MRS CONFERENCE, SYMPOSIUM O: CHALCOGENIDE SEMICONDUCTORS FOR PHOTOVOLTAICS, STRASBOURG, FRANCE, 1-4 JUNE 1999, Bd. 361-362, Seiten 213-217, XP002141416 Thin Solid Films, 21 Feb. 2000, Elsevier, Switzerland ISSN: 0040-6090;  J. MOeLLER ET AL.: "CuInS2 as an Extremely Thin Absorber in an ETA solar cell" PROCEEDINGS OF THE 2ND WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, Bd. 1, 6. - 10. Juli 1998, Seiten 209-211, XP002141358 Vienna, Austria;  K. TENNAKONE ET AL.: "Sensitization of nano-porous films of TiO2 with santalin (red sandalwood pigment) and construction of dye sensitized solid-state photovoltaic cells" J. PHOTOCHEM. PHOTOBIOL. A:CHEM., Bd. 117, 1998, Seiten 137-142, XP000922708;  MOLLER J ET AL: "A novel deposition technique for compound semiconductors on highly porous substrates: ILGAR" 1999 E-MRS CONFERENCE, SYMPOSIUM O: CHALCOGENIDE SEMICONDUCTORS FOR PHOTOVOLTAICS, STRASBOURG, FRANCE, 1-4 JUNE 1999, Bd. 361-362, Seiten 113-117, XP002141417 Thin Solid Films, 21 Feb. 2000, Elsevier, Switzerland ISSN: 0040-6090;  O REGAN B ET AL: "Efficient photo-hole injection from cyanine dyes into CuSCN: a prospective p-type material for a dye sensitized p-n heterojunction" PROCEEDINGS OF THE SYMPOSIUM ON NANOSTRUCTURED MATERIALS IN ELECTROCHEMISTRY, PROCEEDINGS OF NANOSTRUCTURED MATERIALS IN ELECTROCHEMISTRY, RENO, NV, USA, 21-26 MAY 1995, Seiten 208-221, XP000922566 1995, Pennington, NJ, USA, Electrochem. Soc, USA;  O'REGAN B ET AL: "Efficient dye-sensitized charge separation in a wide-band-gap p-n heterojunction" JOURNAL OF APPLIED PHYSICS, 15 OCT. 1996, AIP, USA, Bd. 80, Nr. 8, Seiten 4749-4754, XP000885268 ISSN: 0021-8979;  ROST C ET AL: "Spatially distributed p-n heterojunction based on nanoporous TiO/sub 2/ and CuSCN" APPLIED PHYSICS LETTERS, 2 AUG. 1999, AIP, USA, Bd. 75, Nr. 5, Seiten 692-694, XP002141357 ISSN: 0003-6951;  S. SIEBENTRITT, ET AL.: "CdTe and CdS as Extremely Thin Absorber materials in an ETA solar cell" 14TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, Bd. II, 30. Juni 1997 (1997-06-30) - 4. Juli 1997 (1997-07-04), Seiten 1823-1826, XP002141361 Barcelona, Spain;  TENNAKONE K ET AL: "Nanoporous n-TiO/sub 2//selenium/p-CuCNS photovoltaic cell" JOURNAL OF PHYSICS D (APPLIED PHYSICS), 21 SEPT. 1998, IOP PUBLISHING, UK, Bd. 31, Nr. 18, Seiten 2326-2330, XP000885281 ISSN: 0022-3727DE19910155-A1  GB-Z: Thin Solid State Films, Bd. 297, 1997, S. 299-303WO200052764-A1  TENNAKONE K ET AL: "Nanoporous n-TiO/sub 2//selenium/p-CuCNS photovoltaic cell" JOURNAL OF PHYSICS D (APPLIED PHYSICS), 21 SEPT. 1998, IOP PUBLISHING, UK, Bd. 31, Nr. 18, Seiten 2326-2330, XP000885281 ISSN: 0022-3727;  TENNAKONE K ET AL: &quot;Nanoporous n-TiO/sub 2//selenium/p-CuCNS photovoltaic cell&quot; JOURNAL OF PHYSICS D (APPLIED PHYSICS), 21 SEPT. 1998, IOP PUBLISHING, UK, Bd. 31, Nr. 18, Seiten 2326-2330, XP000885281 ISSN: 0022-3727;  C. ROST ET AL.: "Transparent p-type semiconductors for the ETA solar cell with Extremely Thin Absorber" PROCEEDINGS OF THE 2ND WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, Bd. 1, 6. - 10. Juli 1998, Seiten 212-215, XP002141360 Vienna, Austria;  C. ROST ET AL.: &quot;Transparent p-type semiconductors for the ETA solar cell with Extremely Thin Absorber&quot; PROCEEDINGS OF THE 2ND WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, Bd. 1, 6. - 10. Juli 1998, Seiten 212-215, XP002141360 Vienna, Austria;  J. M\LLER ET AL.: "CuInS2 as an Extremely Thin Absorber in an ETA solar cell" PROCEEDINGS OF THE 2ND WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, Bd. 1, 6. - 10. Juli 1998, Seiten 209-211, XP002141358 Vienna, Austria;  J. M\LLER ET AL.: &quot;CuInS2 as an Extremely Thin Absorber in an ETA solar cell&quot; PROCEEDINGS OF THE 2ND WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, Bd. 1, 6. - 10. Juli 1998, Seiten 209-211, XP002141358 Vienna, Austria;  K. TENNAKONE ET AL.: "Sensitization of nano-porous films of TiO2 with santalin (red sandalwood pigment) and construction of dye sensitized solid-state photovoltaic cells" J. PHOTOCHEM. PHOTOBIOL. A:CHEM., Bd. 117, 1998, Seiten 137-142, XP000922708;  K. TENNAKONE ET AL.: &quot;Sensitization of nano-porous films of TiO2 with santalin (red sandalwood pigment) and construction of dye sensitized solid-state photovoltaic cells&quot; J. PHOTOCHEM. PHOTOBIOL. A:CHEM., Bd. 117, 1998, Seiten 137-142, XP000922708;  O REGAN B ET AL: "Efficient photo-hole injection from cyanine dyes into CuSCN: a prospective p-type material for a dye sensitized p-n heterojunction" PROCEEDINGS OF THE SYMPOSIUM ON NANOSTRUCTURED MATERIALS IN ELECTROCHEMISTRY, PROCEEDINGS OF NANOSTRUCTURED MATERIALS IN ELECTROCHEMISTRY, RENO, NV, USA, 21-26 MAY 1995, Seiten 208-221, XP000922566 1995, Pennington, NJ, USA, Electrochem. Soc, USA;  O REGAN B ET AL: &quot;Efficient photo-hole injection from cyanine dyes into CuSCN: a prospective p-type material for a dye sensitized p-n heterojunction&quot; PROCEEDINGS OF THE SYMPOSIUM ON NANOSTRUCTURED MATERIALS IN ELECTROCHEMISTRY, PROCEEDINGS OF NANOSTRUCTURED MATERIALS IN ELECTROCHEMISTRY, RENO, NV, USA, 21-26 MAY 1995, Seiten 208-221, XP000922566 1995, Pennington, NJ, USA, Electrochem. Soc, USA;  O&apos;REGAN B ET AL: &quot;Efficient dye-sensitized charge separation in a wide-band-gap p-n heterojunction&quot; JOURNAL OF APPLIED PHYSICS, 15 OCT. 1996, AIP, USA, Bd. 80, Nr. 8, Seiten 4749-4754, XP000885268 ISSN: 0021-8979;  O'REGAN B ET AL: "Efficient dye-sensitized charge separation in a wide-band-gap p-n heterojunction" JOURNAL OF APPLIED PHYSICS, 15 OCT. 1996, AIP, USA, Bd. 80, Nr. 8, Seiten 4749-4754, XP000885268 ISSN: 0021-8979;  S. SIEBENTRITT, ET AL.: "CdTe and CdS as Extremely Thin Absorber materials in an ETA solar cell" 14TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, Bd. II, 30. Juni 1997 (1997-06-30) - 4. Juli 1997 (1997-07-04), Seiten 1823-1826, XP002141361 Barcelona, Spain;  S. SIEBENTRITT, ET AL.: &quot;CdTe and CdS as Extremely Thin Absorber materials in an ETA solar cell&quot; 14TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, Bd. II, 30. Juni 1997 (1997-06-30) - 4. Juli 1997 (1997-07-04), Seiten 1823-1826, XP002141361 Barcelona, Spain;  ERNST K ET AL: "Characterization of II-VI compounds on porous substrates" 1999 E-MRS CONFERENCE, SYMPOSIUM O: CHALCOGENIDE SEMICONDUCTORS FOR PHOTOVOLTAICS, STRASBOURG, FRANCE, 1-4 JUNE 1999, Bd. 361-362, Seiten 213-217, XP002141416 Thin Solid Films, 21 Feb. 2000, Elsevier, Switzerland ISSN: 0040-6090;  ERNST K ET AL: &quot;Characterization of II-VI compounds on porous substrates&quot; 1999 E-MRS CONFERENCE, SYMPOSIUM O: CHALCOGENIDE SEMICONDUCTORS FOR PHOTOVOLTAICS, STRASBOURG, FRANCE, 1-4 JUNE 1999, Bd. 361-362, Seiten 213-217, XP002141416 Thin Solid Films, 21 Feb. 2000, Elsevier, Switzerland ISSN: 0040-6090;  MOLLER J ET AL: "A novel deposition technique for compound semiconductors on highly porous substrates: ILGAR" 1999 E-MRS CONFERENCE, SYMPOSIUM O: CHALCOGENIDE SEMICONDUCTORS FOR PHOTOVOLTAICS, STRASBOURG, FRANCE, 1-4 JUNE 1999, Bd. 361-362, Seiten 113-117, XP002141417 Thin Solid Films, 21 Feb. 2000, Elsevier, Switzerland ISSN: 0040-6090;  MOLLER J ET AL: &quot;A novel deposition technique for compound semiconductors on highly porous substrates: ILGAR&quot; 1999 E-MRS CONFERENCE, SYMPOSIUM O: CHALCOGENIDE SEMICONDUCTORS FOR PHOTOVOLTAICS, STRASBOURG, FRANCE, 1-4 JUNE 1999, Bd. 361-362, Seiten 113-117, XP002141417 Thin Solid Films, 21 Feb. 2000, Elsevier, Switzerland ISSN: 0040-6090;  ROST C ET AL: "Spatially distributed p-n heterojunction based on nanoporous TiO/sub 2/ and CuSCN" APPLIED PHYSICS LETTERS, 2 AUG. 1999, AIP, USA, Bd. 75, Nr. 5, Seiten 692-694, XP002141357 ISSN: 0003-6951;  ROST C ET AL: &quot;Spatially distributed p-n heterojunction based on nanoporous TiO/sub 2/ and CuSCN&quot; APPLIED PHYSICS LETTERS, 2 AUG. 1999, AIP, USA, Bd. 75, Nr. 5, Seiten 692-694, XP002141357 ISSN: 0003-6951