TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Amount: Copper (II) beta-diketonate precursor is 1 vol.% of the mixture.Preferred Solvent: The mixture further comprises a solvent selected from diene, silylated olefin, acetylene, or unsaturated ether.Preferred Precursor: Copper (I) beta-diketonate is of formula (V), (R1-C(=O)-C(H)-C(=O)-R2)Cu(I)L.R1 and R2 = 1-6C alkyl groups, 1-6C or 1-6F fluorine substituted alkyl;L = Lewis base selected from alkenes, alkynes, phosphines, carbonyl, polyethers or cyclopolyethers;Copper (II) beta-diketonate is of formula (VI), Cu(II)(R3-C(=O)-C(H)-C(=O)-R4)2.R3 and R4 = R1 and R2;Preferred Mixture: The mixture comprises copper (I)(hexafluoroacetylacetonate)(trimethylvinylsilane) and copper(II)(hexafluoroacetylacetone)2, and a volume percentage ratio of copper(II)(hexafluoroacetylacetone)2 to copper(I)(hexafluoroacetylacetone)(trimethylvinylsilane) is 1:99-65:35, preferably 5:95-50:50. It preferably comprises 98-50 vol.% copper(I)(hexafluoroacetylacetone)(trimethylvinylsilane), preferably 94-70 vol.%, 1-25 vol.% anhydrous copper(II)(hexafluoroacetylacetone)2, preferably 5-20 vol.%, and 1-25 vol.% copper(II)(hexafluoroacetylacetonate)2 dihydrate, preferably 1-10 vol.%. The mixture more preferably contains anhydrous copper(II)(hexafluoroacetylacetonate)2 and copper(I)(hexafluoroacetylacetonate)(vinyltrimethoxysilane). The volume percentage of the former to the latter is 1:99-50:50, preferably 5:95-20:80.Preferred Transport Gas: The transport gas comprises a compound in the vapor phase and selected from silane, alkenes, alkynes, phosphines, carbonyls, hydrated diketones, alkanols, dienes, silylated olefins, acetylene, ethers, acetone, hexane or their mixtures.    TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The chemical vapor deposition (CVD) is a thermal (CVD) and the reaction substrate temperature is 75-500degreesC, preferably 100-500degreesC. The CVD is a plasma promoted CVD and the reaction substrate temperature is 50-500degreesC, preferably 75-500degreesC.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Transport Gas: The transport gas is hydrogen, helium, argon, xenon, nitrogen-containing gases, neon, krypton, carbon monoxide, nitrous oxide, water vapor or their mixtures. It is preferably a nitrogen-containing gas selected from nitrogen, ammonia or hydrazine.Preferred Film: The copper-based film is pure copper and the transport gas comprises hydrogen-containing reducing agent.Preferred Substrate: The substrate further comprises a layer of metallic-based film selected from tungsten, tantalum, titanium, tungsten nitride, tantalum nitride, titanium nitride, titanium nitride silicide or tantalum nitride silicide.    TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: Plasma promoted CVD uses a plasma power density of 0.01-10 W/cm2 and a plasma frequency of 0-108 Hz. An electrical bias is applied on the substrate and it is derived from a direct current, low radio frequency of 500-106 kHz and a microwave frequency of 106-108 kHz. EXAMPLE - A flask purged with nitrogen was charged with 9 L tetrahydrofuran, 1030.3 g copper(I)oxide powder and 1443.5 g vinyltrimethylsilane. 2996.1 g anhydrous hexafluoroacetylacetone was added dropwise for 2 h. The mixture was stirred overnight. It was stripped of volatiles to a temperature of 50degreesC, removing 8 L volatile materials. The solution was transferred through a distillation flask, removing 100 g unreacted copper(I)oxide. 20 mm vacuum was applied and the balance tetrahydrofuran and other volatile materials were removed at 20-25degreesC. Vacuum was increased to 0.025 torr and maximum temperature was 90degreesC. The main product was distilled at 60degreesC at 0.025 mm. The distilled product cut was 3.5 kg of 10-20% solution of copper(II)(hexafluoro- acetylacetonate)2 in copper(I)(hexafluoroacetylacetonate)(vinyltrimethylsilane). The mixture exhibited moderate sensitivity to air, degrading at less than 1% in 1 h.