(JP2000124489-A)   NOVELTY - Photoelectric conversion layer is deposited by plasma chemical vapor deposition at specific underlying layer temperature, specific chamber pressure, specific flow ratio of hydrogen gas to silane-type gas, and at least one of distance between the electrodes, chamber pressure, flow rate of silane-type gas and plasma discharging power are adjusted.    USE - The thin-film photoelectric conversion device is a silicon based solar cell.    ADVANTAGE - When a crystalline silicon-based photoelectric conversion layer is formed on an inexpensive substrate at a low temperature by CVD, film deposition rate is increased and film quality is improved. Thus the performance of the photoelectric conversion device is improved and its cost is reduced.    (JP2000174310-A)   NOVELTY - Photoelectric conversion layer is deposited by plasma chemical vapor deposition at specific underlying layer temperature, specific chamber pressure, specific flow ratio of hydrogen gas to silane-type gas, and at least one of distance between the electrodes, chamber pressure, flow rate of silane-type gas and plasma discharging power are adjusted.    USE - The thin-film photoelectric conversion device is a silicon based solar cell.    ADVANTAGE - When a crystalline silicon-based photoelectric conversion layer is formed on an inexpensive substrate at a low temperature by CVD, film deposition rate is increased and film quality is improved. Thus the performance of the photoelectric conversion device is improved and its cost is reduced.    (JP2000252493-A)   NOVELTY - Photoelectric conversion layer is deposited by plasma chemical vapor deposition at specific underlying layer temperature, specific chamber pressure, specific flow ratio of hydrogen gas to silane-type gas, and at least one of distance between the electrodes, chamber pressure, flow rate of silane-type gas and plasma discharging power are adjusted.    USE - The thin-film photoelectric conversion device is a silicon based solar cell.    ADVANTAGE - When a crystalline silicon-based photoelectric conversion layer is formed on an inexpensive substrate at a low temperature by CVD, film deposition rate is increased and film quality is improved. Thus the performance of the photoelectric conversion device is improved and its cost is reduced.    (JP2000252494-A)   NOVELTY - Photoelectric conversion layer is deposited by plasma chemical vapor deposition at specific underlying layer temperature, specific chamber pressure, specific flow ratio of hydrogen gas to silane-type gas, and at least one of distance between the electrodes, chamber pressure, flow rate of silane-type gas and plasma discharging power are adjusted.    USE - The thin-film photoelectric conversion device is a silicon based solar cell.    ADVANTAGE - When a crystalline silicon-based photoelectric conversion layer is formed on an inexpensive substrate at a low temperature by CVD, film deposition rate is increased and film quality is improved. Thus the performance of the photoelectric conversion device is improved and its cost is reduced.    (US6265288-B1)   NOVELTY - Photoelectric conversion layer is deposited by plasma chemical vapor deposition at specific underlying layer temperature, specific chamber pressure, specific flow ratio of hydrogen gas to silane-type gas, and at least one of distance between the electrodes, chamber pressure, flow rate of silane-type gas and plasma discharging power are adjusted.    USE - The thin-film photoelectric conversion device is a silicon based solar cell.    ADVANTAGE - When a crystalline silicon-based photoelectric conversion layer is formed on an inexpensive substrate at a low temperature by CVD, film deposition rate is increased and film quality is improved. Thus the performance of the photoelectric conversion device is improved and its cost is reduced.