NOVELTY - Production of semiconductor device having a pattern of highly doped regions located some distance apart in a semiconductor substrate and regions of low doping between highly doped regions, involves applying a diffusion barrier material, before the diffusion step, at the location of regions of low doping by imprinting with the barrier material in the pattern of low doping regions.    USE - The method is used for producing semiconductor device, e.g. solar cell.    ADVANTAGE - Regions of high and low doping can be applied efficiently in accurately determined positions on the substrate. The doping concentrations in the regions of low doping and in the highly doped regions can be freely adjusted independently of one another so that a relatively low surface resistance can be obtained for the highly doped regions to give good conducting contact with the metalization and a high surface resistance can be achieved in the regions of low doping. Single screen printing and drying steps can suffice.    DETAILED DESCRIPTION - A semiconductor device having a pattern of highly doped regions (6, 6') located some distance apart in a semiconductor substrate (1) and regions (7, 7', 7) of low doping between the highly doped regions, is produced by:    (a) applying a doping material (2) to the substrate at highly doped regions;    (b) subjecting the substrate to diffusion step, in which atoms diffuse from the doping material into the substrate; and    (c) making conducting contacts (8, 8') above the highly doped regions.    Before the diffusion step, a diffusion barrier material (5, 5', 5) is applied to the substrate at a location of low doping regions by imprinting with the barrier material in the pattern of low doping regions.    DESCRIPTION OF DRAWING(S) - The figures show diagrammatic representation of a method using a uniform layer of doping material.    Substrate (1)    Doping material (2)    Barrier material (5, 5', 5)    Highly doped regions (6, 6')    Low doping regions (7, 7', 7)    Conducting contacts (8, 8')