NOVELTY - Method of producing semiconductor member comprises: anodizing surface of a first substrate to form a porous layer forming thin-crystal semiconductor layer on porous layer; removing semiconductor layer at its peripheral region; bonding second substrate to semiconductor layer; separating the semiconductor layer from the first substrate; and treating surface of first substrate.    USE - The method is used for forming a semiconductor member and a solar cell.    ADVANTAGE - High performance semiconductor members and solar cells having less cracks, breaks or defects are manufactured efficiently.    DETAILED DESCRIPTION - Method of producing a semiconductor member comprises:    (a) anodizing the surface of a first substrate (101) to form a porous layer (103) on at least one surface of the substrate;    (b) forming a thin-film crystal semiconductor layer (104) on the porous layer;    (c) removing the semiconductor layer at its peripheral region;    (d) bonding a second substrate (106) to the surface of the semiconductor layer;    (e) separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate; and    (f) treating the surface of the first substrate after separation and repeating steps (a) to (e).    INDEPENDENT CLAIMS are also included for the following:    (i) a method of producing a semiconductor member comprising:    (a') anodizing the surface of a first substrate to form a porous layer on at least one surface of the substrate;    (b') forming a thin-film crystal semiconductor layer on the porous layer;    (c') bonding a second substrate to the semiconductor layer;    (d') removing the semiconductor layer at its region not covered with the second substrate;    (e') separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate; and    (f') treating the surface of the first substrate after separation and repeating steps (a') to (e');    (ii) a method of producing a solar cell comprising steps (a) to (f);.and    (iii) a method of producing a solar cell comprising steps (a') to (f'); and    (iv) an anodizing apparatus.    DESCRIPTION OF DRAWING(S) - The diagrams show a thin-film semiconductor production process.    First substrate (101)    n+ or p+ layer (102)    Porous layer (103)    Single crystal semiconductor layer (104)    Adhesive layer (105)    Second substrate (106)    Porous residue (107)