NOVELTY - Photovoltaic device comprises semiconductor substrate, first and second electrodes connected to the n-type and p-type diffusion regions, respectively, and support substrate adhered to an adhesive layer. The regions are formed adjacently on semiconducting substrate light-receiving surface, or n-type region is formed on light-receiving surface and p-type region is formed on opposite surface.    USE - Thin film solar cell.    ADVANTAGE - Conversion efficiency is improved regardless of whether the light-receiving surface and the opposite surface are in close proximity since the semiconductor surface opposite the light-receiving surface is passivated by the adhesive layer.    DETAILED DESCRIPTION - When the n-type (13) and p-type (14) diffusion layer regions are formed adjacent to each other on the light-receiving surface of the semiconducting substrate (1), the adhesive layer (5) containing an inorganic binder and a filler is formed on the opposite surface of the substrate (1) and the support substrate (6) is adhered to the adhesive layer (5).    When the n-type diffusion layer region (13) is formed on light-receiving surface of the semiconductor substrate (1) and the p-type diffusion layer region (14) is formed on the opposite surface of the semiconducting substrate (1), the adhesive layer containing an inorganic binder and a filler is formed on the p-type diffusion layer region (14), and the support substrate (6) is adhered to the adhesive layer (5).    Preferred Features: The adhesive layer comprises aluminum oxide, titanium oxide or barium oxide.    The inorganic binder contained in the adhesive layer is an alkali silicate selected from sodium, potassium and lithium silicate, or metal phosphate selected from aluminum or magnesium phosphate.    The refractive index of the adhesive layer is 1.4-3.5.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-section of a photovoltaic device equipped with two electrodes on the light-receiving surface of the semiconductor substrate as a first embodiment of the invention.    Doped polycrystalline or monocrystalline silicon semiconductor substrate (1)    Aluminum electrodes (2, 3)    Adhesive layer (5)    Aluminum oxide diffuse-reflection substrate (6)    N-type diffusion layer region (13)    P-type diffusion layer region (14)