TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: A transparent conductive oxide layer (415) is deposited between the substrate and the n-type window layer. A network of metal bus bars (405) is deposited onto the transparent conductive oxide layer. An encapsulation layer (440) is formed on the cell to provide an airtight barrier against moisture and other contaminants. The encapsulation layer maybe applied to the p-type absorption layer side or n-type window layer side of the cell. A polymer backing layer (445) is heat bonded to the encapsulation layer. The solar cell may also include a metallization layer which is sputter deposited on the side of the p-type absorption layer opposite the n-type window layer, or between the substrate and the p-type absorption layer. A thick layer of rugged plastic or polymer is bonded to the cell underneath the p-type absorption layer or above the n-type window layer. A graded transition buffer semiconductor layer maybe provided between the n-type window layer and the p-type absorption layer. Preferred Dimension: The substrate is approximately 5 mils thick. The p-type absorption layer is 0.2-10 mum thick. The n-type window layer is 0.1-2 mum thick. The metallization layer is 0.2-10 mum thick. Preferred Condition: The p-type absorption layer is sputter deposited at most157degreesC. The n-type window layer is sputter deposited at most157degreesC. The metallization layer, the transparent conductive oxide layer, and the network of metal bus bars are each sputter deposited using a laser-assisted magnetron or an ion assisted deposition (IAD). The transparent conductive oxide layer has a sheet resistance of approximately 200 ohms-per-square.    TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The substrate is a polymer or a plastic, preferably Tefzel or Tedlar. The thick layer is preferably an opaque polymer. The encapsulation layer is made of ethyl vinyl acetate.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The p-type absorption layer comprises cadmium telluride. The metallization layer comprises copper. The transparent conductive oxide layer comprises indium tin oxide. The metal bus bars are made of silver. Preferred Composition: The intrinsic semiconductor layer comprises a blend of approximately 50% cadmium telluride and approximately 50% cadmium sulfide.