WO200227804-A2  PATENT ABSTRACTS OF JAPAN vol. 011, no. 011 (E-470), 13 January 1987 (1987-01-13) -& JP 61 187282 A (MITSUBISHI ELECTRIC CORP), 20 August 1986 (1986-08-20);  PATENT ABSTRACTS OF JAPAN vol. 013, no. 386 (E-812), 25 August 1989 (1989-08-25) -& JP 01 134966 A (FUJI PHOTO FILM CO LTD), 26 May 1989 (1989-05-26);  PATENT ABSTRACTS OF JAPAN vol. 013, no. 386 (E-812), 25 August 1989 (1989-08-25) -&JP 01 134966 A (FUJI PHOTO FILM CO LTD), 26 May 1989 (1989-05-26);  PATENT ABSTRACTS OF JAPAN vol. 011, no. 011 (E-470), 13 January 1987 (1987-01-13) -&JP 61 187282 A (MITSUBISHI ELECTRIC CORP), 20 August 1986 (1986-08-20)US6632701-B2  A. Theuwissen, "Fundamentals of Solid-State Imaging", Solid-State Imaging with Charge-coupled Devices, pp. 131-141, 1995 Reprinted with corrections 1996,1997.;  B. Weibel, "High-end digital cameras can make professional indoor photography a snap", Buyers Guide, pp. 311-317, Apr. 1997.;  D. Knipp, "Low Cost Approach to Realize Novel Detectors for Color Recognition", Proc. ICPS 98 (International Congress on Imaging Science), pp. 350-353, Sep. 1998.;  D. Sutherland, "Neaveau Niche-Part 1: The Latest in digital SLRs", Shutterbug, pp. 200-209, Nov. 1997.;  H. Miura, "A 100 Frames CMOS Active Pixel Sensor for 3D-Gesture Recognition System" 1999 IEEE International Solid-State Circuits Conference, pp. 142-143, Jun. 1999.;  H. Wong, "Technology and Device Scaling Considerations for CMOS Imagers", IEEE Transactions on Electron Devices, vol. 43, No. 12, Dec. 1996.;  J. Kramer, "Photo-ASICs: Integrated Optical Metrology systems with Industrial CMOS Technology", Doctorial Dissertation: Diss Eth Nr. 10186. MSc Imperial College of Science and Technology, pp. 44-47, 1993.;  K. Parulski, "Enabling technologies for a family of digital cameras", SPIE, vol. 2654, Paper 18, pp. 156-163, 1996 (no month).;  M. Chouikha, "Buried Triple p-n Junction Structure in a BiCMOS Technology for Color Detection", IEEE BCTM 6.4, pp. 108-111, 1997 (no month).;  M. Chouikha, "Color sensitive photodetectors in standard CMOS and BiCMOS technologies", SPIE, vol. 2950, pp. 108-120, Aug. 1996.;  P. Seitz et al., "Smart optical and image sensors fabricated with industrial CMOSCCD semiconductor processes", SPIE, vol. 1900, pp. 21-30, Jan. 1993.;  R. Guidash, "A 0.6 um CMOS Pinned Photodiode Color Imager Technology", IEDM, pp. 927-929, 1997 (no month).;  R. Wolfenbuttel et al., "Performance of an Integrated Silicon Colour Sensor with a Digital Output in Terms of Response to Colours in the Colour Triangle", Sensors and Actualtors, vol. A21-A23, pp. 574-580, 1990 (no month).;  R. Wolffenbuttel of al., "A Novel Approach to Solid-state Colour Sensing", Senors and Actuators, vol. 9, pp. 199-211, 1986 (no month).;  Rob Hannebauer, of Foveon, Inc. re Declaration of Concise Explanation of Relevance for JP 61 187282 and JP 01 134966, May 9, 2003.;  S. Chamberlain, "Photosensitivity and Scanning of Silicon Image Detector Arrays", IEEE Journal of Solid-State Circuits, vol. SC-4, No. 6, pp. 333-342, Dec. 1969.;  Stiebig et al., Transient Behavior of Optimized nipiin Three-Color Detectors, IEEE Transactions on Electron Devices, vol. 45, No. 7, pp. 1438-1443, Jul. 1998.US6727521-B2  A. Theuwissen, "Fundamentals of Solid-State Imaging", Solid-State Imaging with Charge-coupled Devices, pp. 131-141, 1995 Reprinted with corrections 1996,1997.;  B Weibel, "High-end digital cameras can make professional indoor photography a snap", Buyers Guide, pp. 311-317, Apr. 1997.;  D Sutherland, "Neaveau Niche-Part 1: The Latest in digital SLRs", Shutterbug, pp. 200-209, Nov. 1997.;  D. Knipp, "Low Cost Approach to Realize Novel Detectors for Color Recognition", Proc. ICPS 98 (International Congress on Imaging Science), pp. 350-353, Sep. 1998.;  H Miura, "A 100 Frames CMOS Active Pixel Sensor for 3D-Gesture Recognition System" 1999 IEEE International Solid-State Circuits Conference, pp. 142-143, Jun. 1999.;  H Wong, "Technology and Device Scaling Considerations for CMOS Imagers", IEEE Transactions on Electron Devices, vol. 43, No. 12, Dec. 1996.;  J. Kramer, "Photo-ASICs: Integrated Optical Metrology systems with Industrial CMOS Technology", Doctorial Dissertation: Diss Eth Nr. 10186. MSc Imperial College of Science and Technology, pp. 44-47, 1993.;  K. Parulski, "Enabling technologies for a family of digital cameras", SPIE, vol. 2654, Paper 18, pp. 156-163, 1996 (no month).;  M. Chouikha, "Buried Triple p-n Junction Structure in a BiCMOS Technology for Color Detection", IEEE BCTM 6.4, pp. 108-111, 1997 (no month).;  M. Chouikha, "Color sensitive photodetectors in standard CMOS and BiCMOS technologies", SPIE, vol. 2950, pp. 108-120, Aug. 1996.;  P. Seitz et al., "Smart optical and image sensors fabricated with industrial CMOSCCD semiconductor processes", SPIE, vol. 1900, pp. 21-30, Jan. 1993.;  R. Guidash, "A 0.6 um CMOS Pinned Photodiode Color Imager Technology", IEDM, pp. 927-929, 1997 (no month).;  R. Wolfenbuttel et al., "Performance of an Integrated Silicon Colour Sensor with a Digital Output in Terms of Response to Colours in the Colour Triangle", Sensors and Actualtors, vol. A21-A23, pp. 574-580, 1990 (no month).;  R. Wolffenbuttel et al., "A Novel Approach to Solid-state Colour Sensing", Senors and Actuators, vol. 9, pp. 199-211, 1986 (no month).;  S. Chamberlain, "Photosensitivity and Scanning of Silicon Image Detector Arrays", IEEE Journal of Solid-State Circuits, vol. SC-4, No. 6, pp. 333-342, Dec. 1969.;  Stiebig et al., Transient Behavior of Optimized nipiin Three-Color Detectors, IEEE Transactions on Electron Devices, vol. 45, No. 7, pp. 1438-1443, Jul. 1998.US7132724-B1  A. Theuwissen, "Fundamentals of Solid-State Imaging", Solid-State Imaging with Charge-coupled Devices, pp. 131-141, 1995 Reprinted with corrections 1996,1997.;  B. Burkey et al, The Pinned Photodiode For an Interline-Transfer CCD Image Sensor, 1984 IEDM, pp. 28-31, Dec. 9-12, San Francisco, CA 1984.;  B. Weibel, "High-end digital cameras can make professional indoor photography a snap", Buyers Guide, pp. 311-317, Apr. 1997.;  D. Knipp et al, "Low Cost Approach to Realize Novel Detectors for Color Recognition", Proc. ICPS 98 (International Congress on Imaging Science), pp. 350-353, Sep. 1998.;  D. Sutherland, "Neaveau Niche-Part 1: The Latest in digital SLRs", Shutterbug, pp. 200-209, Nov. 1997.;  H. Miura et al, "A 100 Frames CMOS Active Pixel Sensor for 3D-Gesture Recognition System" 1999 IEEE International Solid-State Circuits Conference, pp. 142-143, Jun. 1999.;  H. Wong, "Technology and Device Scaling Considerations for CMOS Imagers", IEEE Transactions on Electron Devices, vol. 43, No. 12, Dec. 1996.;  J. Kramer, "Photo-ASICs: Integrated Optical Metrology Systems with Industrial CMOS Technology", Doctorial Dissertation: Diss Eth Nr. 10186. MSc Imperial College of Science and Technolgy, pp. 44-47, 1993.;  K. Parulski et al, "Enabling technologies for a family of digital cameras", SPIE, vol. 2654, Paper 18, pp. 156-163, 1996, no month.;  M. Chouikha et al, "Buried Triple p-n Junction Structure in a BiCMOS Technology for Color Detection", IEEE BCTM 6.4, pp. 108-111, Sep. 1997.;  M. Chouikha et al, "Color sensitive photodetectors in standard CMOS and BiCMOS technologies", SPIE, vol. 2950, pp. 108-120, Aug. 1996.;  P. Seitz et al., "Smart optical and image sensors fabricated with industrial CMOSCCD semiconductor processes", SPIE, vol. 1900, pp. 21-30, Jul. 1993.;  R. Guidash, "A 0.6 um CMOS Pinned Photodiode Color Imager Technology", IEDM, pp. 927-929, 1997, no month.;  R. Wolffenbuttel et al., "A Novel Approach to Solid-State Colour Sensing", Senors and Actuators, vol. 9, pp. 199-211, 1986, no month.;  R. Wolffenbuttel et al., "Performance of an Integrated Silicon Colour Sensor with a Digital Output in Terms of Response to Colours in the Colour Triangle", Sensors and Actualtors, vol. A21-A23, pp. 574-580, 1990, no month.;  S. Chamberlain, "Photosensitivity and Scanning of Silicon Image Detector Arrays", IEEE Journal of Solid-State Circuits, vol. SC-4, No. 6, pp. 333-342, Dec. 1969.;  Stiebig et al., Transient Behavior of Optimized nipiin Three-Color Detectors, IEEE Transactions on Electron Devices, vol. 45, No. 7, pp. 1438-1443, Jul. 1998.EP1320893-B1  PATENT ABSTRACTS OF JAPAN vol. 011, no. 011 (E-470), 13 January 1987 (1987-01-13) -& JP 61 187282 A (MITSUBISHI ELECTRIC CORP), 20 August 1986 (1986-08-20);  PATENT ABSTRACTS OF JAPAN vol. 013, no. 386 (E-812), 25 August 1989 (1989-08-25) -& JP 01 134966 A (FUJI PHOTO FILM CO LTD), 26 May 1989 (1989-05-26)