TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The chemical vapor deposited dielectric is an oxide, nitride, oxynitride, fluorinated oxide, diamond-like carbon, or fluorinated-like carbon.The substrate comprises a semiconductor material from gallium arsenide, germanium, silicon, silicon germanium, lithium niobate, crystalline silicon, polysilicon, amorphous silicon, epitaxial silicon, and/or silicon dioxide.It has pattern of lines on its surface.The pattern of lines are silica, silicon nitride, titanium nitride, tantalum nitride, aluminum or its alloy, copper or its alloy, tantalum, tungsten, or silicon oxynitride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The chemical vapor deposited dielectric is alkyl silanes, alkoxysilane of formula R-(R)Si(R)-R, silicon-oxygen-carbon, nitrogen-terminated arylene ether, tetrafluoride-terminated arylene ethers, amorphous carbon-fluorine, and/or silicon-carbon.Either: (a) R = methoxy, ethoxy, propoxy, or butoxy;or(b) at least 2 R groups = 1-4C alkoxy (the balance comprises H, alkyl, Ph, halo, substituted Ph).    TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The chemical vapor deposition is conducted by heating at 100-500 (preferably 350-400)degrees C for 30 seconds to 3 minutes.It can be conducted by low pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, (sub-)atmospheric pressure chemical vapor deposition, or high density plasma chemical vapor deposition.The electron beam radiation is exposed while at 200-400degrees C for 2-4 minutes at an energy level of 0.5-20 keV, or while the substrate is heated at 10-400degrees C and under 10-5-10-2 torr.The electron beam exposure is conducted by overall flood exposing the entire thickness of the whole area of the layer to electron beam radiation.It is from a source generating an electron dose of 10-100000 muC/cm2 or an electron beam current of 1-30 mA.It is conducted in a gas from nitrogen, oxygen, hydrogen, argon, xenon, helium, ammonia, methane, silane, a blend of hydrogen and nitrogen, and/or ammonia.Preferred Property: The dielectric has a dielectric constant of at most 3 after electron beam exposure. The electron beam source covers an area of 4-256 in2.