NOVELTY - Pattern transfer method involves using convex pattern portion and concave pattern portion of resist film (2) formed with the press of concavo-convex mold as a mask of ultraviolet ray, performing ultraviolet irradiation to the film (2) and selectively forming modification portion (10) and non-modification portion (11) in the film (2).    USE - For transferring pattern used in manufacture of semiconductor devices, such as liquid crystal display, field emission display, organic electroluminescent display, solar cell and semiconductor.    ADVANTAGE - The method selectively modifies the resist film by performing ultraviolet irradiation. The method is inexpensive and produces excellent accuracy. Improved productive pattern transfer is easily realized by wet etching of the resist film. The pattern which transfers the resist film and the molding conditions of the concavo-convex portion of the resist film is improved. Press forming of the resist film is improved by the press conditions and ultraviolet irradiation conditions in the concavo-convex mold. The method reduces press load and improves production conditions by using the concavo-convex mold having dummy pattern. The equipment cost is reduced.    DETAILED DESCRIPTION - A circuit pattern is transferred to a substrate top by pressing the resist film of polymeric material formed on the substrate with concavo-convex mold having unevenness. The convex pattern portion and the concave pattern portion of the resist film formed with the press of concavo-convex mold are used as a mask of ultraviolet ray. An ultraviolet irradiation is performed to the resist film. The modification portion and non-modification portion are selectively formed in the resist film. The pattern is transferred.    DESCRIPTION OF DRAWING(S) - The figure shows the explanatory drawing of the resist film after ultraviolet irradiation.    Substrate (1)    Resist film (2)    Modification portion of resist film (10)    Non-modification portion of resist film (11)