NOVELTY - A thin film transistor made with photoconductive material comprises a transparent substrate, gate electrode, dielectric layer, photoconductive layer, source electrode, drain electrode, and passivation layer. The drain and gate electrodes do not overlap and the photoconductive layer under the drain electrode and above the gate electrode forms a photoconductive region.    USE - For liquid crystal display.    ADVANTAGE - The thin film transistor reduces or eliminates the parasitic capacitance and feed-through voltage by providing photoconductive material between the drain electrode and gate electrode. It increases the brightness of the liquid crystal display by forming individual pixels without storage capacitance. It reduces or eliminates the flicker and Shot Mura by forming a photoconductive layer between the drain electrode and gate.    DETAILED DESCRIPTION - A thin film transistor made with photoconductive material comprises a transparent substrate (141); gate electrode (142) formed on the substrate; dielectric layer (143) formed on the gate electrode and the transparent substrate; photoconductive layer (144) formed on the dielectric layer; source electrode (146) formed on the dielectric layer and the photoconductive layer and located at one side of the gate electrode; drain electrode (145) formed on the dielectric layer and the photoconductive layer and locating beside another side of the gate electrode, where the drain and gate electrodes do not overlap and the photoconductive layer under the drain electrode and above the gate electrode forms a photoconductive region; and passivation layer (147) formed on the source electrode, drain electrode, photoconductive layer and the dielectric layer.    DESCRIPTION OF DRAWING(S) - The figure schematically shows a cross-section of the thin film transistor.    Substrate (141)    Gate electrode (142)    Dielectric layer (143)    Photoconductive layer (144)    Drain electrode (145)    Source electrode (146)    Passivation layer (147)