TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The modification portion and non-modification portion of the resist film are solubilized. A positive or negative type photoresist, positive or negative type resist for deep ultraviolet, resist for electron beams, polystyrene, polypropylene, polymethylmethacrylate and their copolymers are used to the resist film during solubilization. The resist film of sub layer modified by ultraviolet irradiation is formed in the substrate side. The resist film of two layer structure which forms a surface resist film on the surface layer with the press of concavo-convex mold is formed. The film of at least two types of resist film material is bonded and formed on the substrate. Resist film of multiple layer structure is formed. The substrate is immersed to an etching liquid and ultraviolet irradiation is performed after forming concavo-convex pattern with concavo-convex mold press. A dummy pattern with which unevenness smaller than the pattern size besides the unevenness of the pattern form transferred is formed in the concavo-convex mold. The temperature of the concavo-convex mold and/or substrate are set as the thermal deterioration temperature of the polymeric material of the resist film. EXAMPLE - A resist film of styrene resin of thickness 6 mum was formed on the surface of silicon substrate of 0.6 mm thickness by spin coat method on 20 mm square. The mold provided with concave pattern of depth 6 mum in the circuit pattern form with the minimum line width of pattern of 10 mum, was pressed on one side at 200degreesC with the press pressure of 100 kgf/cm2. The convex pattern of circuit pattern form was formed in the resist film after the press. Ultraviolet irradiation using ultraviolet ray lamp of 254 nm wavelength was performed on the resist film. The substrate was immersed in xylene as etching liquid and wet etching was performed. Only the convex pattern of circuit pattern form had remained on the silicon substrate. The substrate was etched using the convex pattern as mask. Hydrofluoric acid, nitric acid and acetic acid in volume ratio 2:5:2 was used to the etching liquid. The silicon substrate surface except for the resist film, exposed with the wet etching which immersed the substrate to the etching liquid was etched. The resist films were removed. The silicon substrate surface where the resist film had remained was not etched but the other substrate surface was etched.