NOVELTY - Metal organic chemical vapor deposition (MOCVD) method comprises growing indium-gallium-arsenic-nitrogen (In-Ga-As-N) using tertiarybutyl hydrazine (TBHy) as a nitrogen precursor.    USE - For metal organic chemical vapor deposition for use in semiconductor alloy, solar cell, vertical-cavity surface-emitting layer (VCSEL) device, hetero-junction bipolar transistor (HBT), high electron mobility transistor (HEMT) and opto-electronic device and electronic device (all claimed). Also used in In-Ga-As-N based opto-electronic and electronic devices for high-speed optical communication, low-power HEMTs for wireless applications, and high efficiency multiple junction solar cells for space power system.    ADVANTAGE - High quality indium-gallium-arsenic-nitrogen (In-Ga-As-N), is grown efficiently and inexpensively by metal organic chemical vapor deposition (MOCVD) method, at lower growth temperatures. Photovoltaic characteristics of 1.20 eV In-Ga-As-N solar cells, such as open circuit voltage, short circuit current, fill factor and efficiency, are improved significantly by using tertiarybutyl hydrazine (TBHy) in MOCVD. The carbon concentration in In-Ga-As-N grown with TBHy is reduced by increasing the glass transition temperature, thereby improving the crystalline quality of In-Ga-As-N. By using the efficient and less carbon containing TBHy as nitrogen source, not only the cost of MOCVD-grown In-Ga-As-N can be effectively reduced, but also the material quality of In-Ga-As-N can be significantly improved.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) Semiconductor In-Ga-As-N alloy;    (2) Solar cell comprising an epitaxial layer of In-Ga-As-N;    (3) Vertical-cavity surface-emitting layer (VCSEL) device comprising the In-Ga-As-N;    (4) Hetero-junction bipolar transistor (HBT) comprising the In-Ga-As-N;    (5) High electron mobility transistor (HEMT) comprising the In-Ga-As-N channel;    (6) Opto-electronic device comprising the In-Ga-As-N; and    (7) Electronic device comprising the In-Ga-As-N.    DESCRIPTION OF DRAWING(S) - The figure shows the graph illustrating the room temperature PL spectra of indium-gallium-arsenic-nitrogen/gallium-arsenic quantum wells.