TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Materials: At the temperature less than the pyrolysis temperature, it has the smectic liquid-crystal-phase state at least. It has terminal groups which show liquid crystallinity at both the terminals. The organic-semiconductor layer consists of a liquid crystalline organic-semiconductor material in which at least1 part is orientation crystallized by cooling after maintaining at a temperature which imparts a liquid-crystal state. The organic-semiconductor layer is formed in a state which contacts the liquid-crystal orientation layer. By this contact, a liquid crystalline organic-semiconductor material is formed which is anisotropically oriented in a specific direction. The liquid-crystal orientation layer consists of a polyimide type-material, or a curable resin which has micro-roughness on the surface, or a base material and a curable resin which has micro-roughness on the surface. EXAMPLE - The structure of an organic-semiconductor apparatus was formed based on a substrate, a gate electrode, a gate insulating layer (a liquid-crystal orientation layer), source-drain electrode and a liquid crystalline organic-semiconductor layer and optionally a protective layer. Liquid crystalline organic-semiconductor material is made into a film on a glass substrate. After forming a liquid-crystal state by raising the temperature to a liquid crystal phase, the crystal phase was made by slow cooling. The substrate was cleaned by ultrasonic cleaning using a neutral detergent, pure water, acetone, and isopropyl alcohol in order. The gate electrode was formed on the substrate by carrying out resistance-heating vapor deposition of a strip-shaped pattern (electrode width 100 mum, 5 mm between electrodes) of Au (300 nm thickness) via a metal mask. A similar electrode pattern can be formed by carrying out patterning of a ITO electrode by a wet process. A gate insulating layer is formed by spin application of a photosensitive polyimide. The gate electrode terminal was exposed by exposure image development after drying at 100degreesC. After firing at the maximum temperature of 350degreesC, a gate insulating layer with a film thickness of 300 nm was formed. Orientation processing of the surface of the formed polyimide film was carried out by rubbing. As a source-drain electrode pad (50 mum channel length, channel width 4 mm), Au was formed using a metal mask by resistance-heating vapor deposition. The liquid crystalline organic-semiconductor layer liquid crystalline organic-semiconductor material is a compound of formula 37.