TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition also comprises (C) silicon particles, and (D) compound(s) selected from a boron compound, an arsenic compound, a phosphorus compound, an antimony compound and/or a modified silane compound of formula (III).SiaXbYc (III)X = H and/or halo;Y = boron or phosphorus atom;a = at least 3;b = 1 to a; andc = a to (2a+b+2).    TECHNOLOGY FOCUS - ELECTRONICS - Preferred Semiconductor: The semiconductor thin film may be an i-type silicon thin film, or it may be a p- or n-type silicon thin film, where the formation further comprises a step of doping with atom(s) selected from boron, arsenic, phosphorus and antimony. The semiconductor thin film to be formed is an amorphous silicon thin film or a polysilicon thin film. EXAMPLE - Dried tetrahydrofuran (1 l) and lithium metal (18.3 g) were fed to an argon-flushed the flask and bubbled with the argon gas. Diphenyl dichlorosilane (333 g) was dropped into this suspension with agitation at 0 degrees C. Stirring was continued at room temperature for 12 hours, until the lithium metal disappeared. The reaction mixture was poured into iced water (5 l) to precipitate a reaction product. This precipitate was separated by filtration, washed with water and then with cyclohexane, and vacuum dried to obtain a white solid (140 g). Aluminum chloride (4 g) was added to a mixture of the white solid (100 g) and dried cyclohexane (1,000 ml), and dried HCl gas was bubbled at room temperature with agitation for 8 hours. The reaction mixture was added to a mixture of lithium aluminum hydride (40 g) and diethyl ether (400 ml) in an argon atmosphere under agitation at 0 degrees C. The mixture was stirred for 1 hour and further stirred at room temperature for 12 hours. When vacuum distillation was performed at 70 degrees C and 10 mmHg, an achromatic liquid (10 g) was obtained, which was found to cyclopentasilane. This cyclopentasilane (10 g) was exposed to light from a 500 W high-pressure mercury lamp for 30 minutes under agitation, and a white solid was obtained, which was insoluble in toluene and cyclohexane. Further cyclopentasilane (100 g) was added to this white solid, an achromatic and transparent solution was obtained.    A glass substrate was spin coated with the achromatic and transparent solution in a nitrogen gas atmosphere at a revolution of 2,000 rpm and set on a hot plate in a nitrogen gas atmosphere to be heated at 200 degrees C for 10 minutes, then 500 degrees C for 15 minutes. The coating film had a metallic gloss. When the ESCA spectrum of this thin film was measured, only a peak derived from Si was observed at 99 eV. This ESCA spectrum is shown in the drawing. The amorphous silicon film had a thickness of 80 nm.