TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The photon absorber layer comprises n-type cadmium telluride (CdTe). The window layer comprises n-type cadmium sulfide (CdS). The n-type enhancement treatment comprises chemically doping photon absorber layer with an n-type dopant from the set of groups comprising group III elements and group VII elements. The n-type enhancement treatment comprises doping with cadmium halide based dopant, e.g. cadmium chloride, cadmium bromide, or cadmium iodide. The n-type enhancement treatment is also applied to window layer. The Fermi energy level is pinned as deep as possible below the conduction band minimum to create the maximum possible Schottky barrier. The photon absorber layer has a narrow type top surface layer, which is protected from metal contact by a material layer positioned in between photon absorber layer and metal contact. The protective layer comprises a narrow p-type semiconducting layer having a band gap larger than that of photon absorber layer, and ultra thin organic insulating polymer or inorganic insulator. The n-type window layer is deposited on a transparent conducting glass (CG) at the front substrate layer. It is deposited using electrodeposition or chemical bath deposition. The n-type window layer comprises cadmium sulfide (CdS). The n-type semiconductor photon absorber compound comprises cadmium telluride (CdTe). The n-type dopant comprises cadmium halide such as, cadmium iodide (CdI2), cadmium bromide (CdBr2), or cadmium chloride (CdCl2). The doping agent comprises iodine, chlorine, and bromine.Preferred Process: The fabrication of thin film photovoltaic device further includes incorporating an intermediate protective layer between the outer surface of photon absorber layer and metal contact. The insulator comprises an organic polymer or inorganic material such as calcium fluoride or strontium fluoride.Preferred Condition: The n-type enhancement treatment comprises heating device in air at temperature between 250-500, preferably 450degreesC for 20 minutes. The concentration of applied doping is in the approximate region of 5 x 1015-5 x 1017 atoms/cm3. The Fermi energy level is pinned at a value of at least 0.40 +/- 0.04 eV.