TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: Coating is performed at a growth rate (GR) of at least150 (preferably at least1000) Angstrom/min and with a gas utilization number (GA-F) of 1-90% (preferably at least5%), and at a coating rate per reactive gas flow unit (GR-F) of at least7.5 (preferably at least75) Angstrom/standard cubic centimeter/min. The discharge (preferably hot-cathode low-voltage discharge) is set, so that, a current density of at least0.05 (preferably at least0.1) A/cm2 probe surface is set in the case of a probe measurement at the site where the workpiece surface will be positioned. The measured current density is generated by electron incidence. The discharge is used as the electron source for the reactive gas dissociation. A discharge voltage is applied between the discharge cathode and a vacuum recipient wall applied to a reference potential (preferably ground potential). In the process space, the workpiece is operated on a floating potential or is connected to a switched-on bias potential. The workpiece is operated relative to the discharge anode at -25 - +25 (preferably -20 - +20) volts for gallium bonds (preferably silicon, germanium or their bonds). Along the discharging distance, an auxiliary anode (preferably in the form of a ring anode surrounding the discharge) is provided. This ring anode is operated on an adjustable voltage relative to the discharge cathode. In the vacuum recipient, an insulated anode (preferably in the form of a ring anode) is provided for the discharge. The vacuum recipient wall is operated on the floating potential or by way of an impedance element anchored to a reference potential. The desired coating rate changes are carried out by adjusting the reactive gas flow in the vacuum recipient or discharge current density, or preferably by adjusting the discharge current and/or discharge voltage, and/or by electrostatically and/or magnetically deflecting a bunching variation of the discharge relative to the workpiece. The workpiece is heated independently of the discharge. Preferred Parameters: The discharge current (I-AK) is set at 5-400 (preferably 20-100) A, and the discharge voltage (U-AK) is set at 10-80 (preferably 30-35) V. In the process space, the reactive gas partial pressure (P-R) is set at most1x10-1 (preferably 1x10-4 - 1x10-2) mbar, and the total pressure (P-T) is set at 1x10-4 - 1x10-1 (preferably 1x10-3 - 1x10-2) mbar. In the recipient, the working gas partial pressure is set at 1x10-4 - 1x10-1 (preferably 1x10-3 - 1x10-2) mbar. The workpiece temperature is maintained at most600degreesC (preferably 300-600degreesC) for silicon and/or germanium, and at 300-800degreesC for gallium bonds. Preferred Components: The cathode can be placed on a cathodic potential of 10-80 (preferably 20-35) V relative to the anode potential. The workpiece holder can be adjusted maximally by +/-25 V relative to the anode potential. When the workpiece holder is potential-floating, the workpiece holder is arranged so that its voltage is set at not more than -25 (preferably -3 - -15) V relative to the anode arrangement. The workpiece holder can be placed by an adjustable bias source at -25 - +25 (preferably -15 - -3) V relative to the anode arrangement.