TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The binding energy and desorption temperature of hydrogen (H) to the nanostructured storage material with modified bonds is greater than that with unmodified bonds. H has a binding energy to the storage material. The storage material with modified bond has binding energy of greater than 0.10 eV and desorption temperature of greater than 60K. It is capable of absorbing more H and has non-planar shape that modifies the sp2 bonds.Preferred Components: The non-planar shape comprises at least1 of thin nanoplatelet, thick nanoplatelet, and intercalate nanoplatelet, preferably at least1 of an empty nanocage, filled nanocage, multifaceted nanocage, empty nanococoon, filled nanococoon, multifaceted nanococoon, nanotorus, nanocoil, buckyball, and nanohorn.It further comprises at least1 of single walled nanotube, double walled nanotube, multi walled nanotube, nanotube with zig-zag or mixture of chiralties, twisted nanotube, straight nanotube, bent nanotube, kinked nanotube, curled nanotube, flattened nanotube, round nanotube, turbostratic nanofiber, highly oriented nanofiber, twisted nanofiber, straight nanofiber, curled nanofiber, rigid nanofiber, nanorod, nanowire, rope of nanotubes, braid of nanotubes, and bundle of nanotubes in heterogeneous form. It also has defects that modify the bonds.The defects comprise light elements of first kind implanted into network of elements of second and third kind. They have pentagons and heptagons of the elements. The storage material further includes donor atoms to transfer charges from the elements that modify the bonds.Preferred Methods: Forming the storage material comprises including doping gases in the flow of chemical vapor deposition synthesis, forming powder mixture, hot pressing the powder mixture, and using the hot-pressed powder as an electrode in an arc synthesis of the storage material. The storage material is ball-milled with the powder of the elements. It is annealed at 400-1800degreesC. The light elements are removed from the storage material by irradiation with electrons, neutrons, ions, gamma-rays, X-rays, or microwaves. 5-7 pairs of defects are nucleated by introducing cyclopentadiene, cycloheptatriene, and azulene into the flow of synthesis.Preferred Composition: The chemical composition of the storage material is BxCyNz, boron nitride, BC2N, C3N4, magnesium boride, beryllium nitride, beryllium boride, boron oxide, B, beryllium oxide, aluminum chloride, aluminum carbide, aluminum fluoride, aluminum oxide, aluminum sulfide, magnesium silicide, magnesium nitride, lithium nitride, lithium sulfide, and/or sodium sulfide.x-z = integers.The doping gas is consists of ammonia, primary amine, secondary amine, tertiary amine, boron chloride, boron fluoride, boron hexahydride, boron hydride, silicon tetrahydride, silicon hexahydride, silicon tetrachloride, silicon tetrafluoride, SiH2Cl2 (sic), hydrogen sulfide, or phosphorus hydride.