NOVELTY - A nitride semiconductor (102) comprises a conductive layer, a first terminal (106), a nitride semiconductor with a light-emitting layer, and a second terminal (103), from a supporting substrate (111) successively, where the first terminal and a first insulating protect layer (107) are interposed between the conductive layer, and a first conductive type nitride semiconductor layer.    USE - The assembly is used for a light-emitting device such as a light emitting diode and a laser diode; a photoreceptor such as a solar cell and a photo sensor; and an electronic device such as a transistor and a power device. It is applied for a full-color display, traffic lights, an image scanner, light sources such as a light source for an optical disc, which is media, for digital versatile disc, a light source of communication, and a printer. It is anticipated to apply to an electronic device such as a field-effect transistor.    ADVANTAGE - The invention is highly efficient, and whose terminals are facing each other without increasing its voltage. It is a high light-emitting power nitride semiconductor even in UV region. The p-pad terminal can be eliminated, increasing the area of light-emission. Short circuit is prevented, thus improving yield and reliability, and simplifying the production process. The outgoing efficiency of the light is improved extremely, without etching damage or reduction of the life characteristics. The nitride semiconductor layer has fewer nicks or cracks occurred at exfoliation and with high thermal dissipation.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of producing a nitride semiconductor, comprising growing the nitride semiconductor having a second conductive type nitride semiconductor layer, the light-emitting layer, and a first conductive type nitride semiconductor layer, on a different material substrate; subsequently attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor, with interposing between them the first terminal; and subsequently eliminating the different material substrate to expose the second conductive type nitride semiconductor layer.    DESCRIPTION OF DRAWING(S) - The figure schematically shows a cross-sectional view of nitride semiconductor.    Nitride semiconductor (102)    Second terminal (103)    First terminal (106)    Insulating protect layer (107)    Supporting substrate (111)