EP1304748-A2  LEGUIJT C ET AL: "Low temperature surface passivation for silicon solar cells" 1. August 1996 (1996-08-01), SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, PAGE(S) 297-345 , XP004008111 ISSN: 0927-0248 * Zusammenfassung * * Absatz 4.1.1 "Role of hydrogen from anneal ambient; Introduction" *;  "Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor deposition system" 8. September 1997 (1997-09-08), APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, PAGE(S) 1371 , XP012018546 ISSN: 0003-6951 * das ganze Dokument *DE10152707-A1  IZUMI, A., MATSUMURA, H.: Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor depostion system. In: Appl. Phys. Lett., ISSN 0003-6951, 1997, Vol. 71, No. 10, S. 1371-1372;  MATSUMURA, H.: Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method. In: Jpn. J. Appl. Phys., Part 1, 1998, Vol. 37, No. 6A, S. 3175-3187;  NIIRA, K., HAKUMA, H., KOMODA, M., FUKUI, K., SHIRASAWA, K.: Thin film poly-Si formation for solar cells by Flux method and Cat-CVD method. In: Solar Energy Materials & Solar Cells, ISSN 0927-0248, 2001, Vol. 69, S. 107-114;  SCHROPP, R.E.I., ALKEMADE, P.F.A., RATH, J.K.: Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition. In: Solar Energy Materials & Solar Cells, ISSN 0927-0248, 2001, Vol. 65, S. 541-547DE10152707-B4  IZUMI, A., MATSUMURA, H.: Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor depostion system. In: Appl. Phys. Lett., ISSN 0003-6951, 1997, Vol. 71, No. 10, S. 1371-1372;  MATSUMURA, H.: Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method. In: Jpn. J. Appl. Phys., Part 1, 1998, Vol. 37, No. 6A, S. 3175-3187;  NIIRA, K., HAKUMA, H., KOMODA, M., FUKUI, K., SHIRASAWA, K.: Thin film poly-Si formation for solar cells by Flux method and Cat-CVD method. In: Solar Energy Materials & Solar Cells, ISSN 0927-0248, 2001, Vol. 69, S. 107-114;  SCHROPP, R.E.I., ALKEMADE, P.F.A., RATH, J.K.: Poly-silicon films with low impurity concentration made by hot wire chemical vapour deposition. In: Solar Energy Materials & Solar Cells, ISSN 0927-0248, 2001, Vol. 65, S. 541-547EP1304748-B1  "Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor deposition system" 8. September 1997 (1997-09-08), APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, PAGE(S) 1371 , XP012018546 ISSN: 0003-6951 * das ganze Dokument *;  LEGUIJT C ET AL: "Low temperature surface passivation for silicon solar cells" 1. August 1996 (1996-08-01), SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, PAGE(S) 297-345 , XP004008111 ISSN: 0927-0248 * Zusammenfassung * * Absatz 4.1.1 "Role of hydrogen from anneal ambient; Introduction" *