TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The first and second monocrystalline semiconductor layers comprise a first or second type of dopant. Each of these layers are doped with opposite type dopants such that their combination forms p-n junctions grown on top of the buffer layer. The semiconductor structure further comprises a template layer (114), comprising a surfactant and capping layer, formed between the accommodating buffer layer (conductive) and the first semiconductor layer.The structure further comprises p-n junction formed within the substrate, a conductive material layer adjacent and in contact with the substrate, and a microelectronic device (including charge controller and inverter) formed using the substrate. Each of the p-n junctions includes emitter and base regions.The structure also comprises a multijunction cell having additional semiconductor layers and second oxide layer.Preferred Property: The buffer layer is 2-10 nm thick.Preferred Methods: A portion of the structure is exposed to an anneal process. The amorphous layer is formed between the buffer layer and substrate. The second buffer layer is grown overlying the semiconductor material layer(s).    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The surfactant comprises at least1 of aluminum (Al), indium (In), and gallium, preferably Al. The capping layer comprises at least1 of arsenic, phosphorus (P), and nitrogen, preferably aluminum-strontium (Al2Sr). The first semiconductor layer comprises gallium-arsenic (GaAs). The buffer layer comprises an oxide consisting of (alkaline earth metal) titanates, zirconates, hafnates, tantalates, ruthenates, or niobates, preferably SrxBa1-xTiO3.x = 0-1.The substrate comprises silicon and the amorphous oxide layer comprises silicon oxide. The first semiconductor layer is a compound semiconductor material consisting of III-V compounds, mixed III-V compounds, II-VI compounds, and mixed II-VI compounds, preferably GaAs, aluminum-GaAs, InP, InGaAs, InGaP, InGaAsP, AlInP, or GaInP. The dopant types are GaAs. The p-n junctions comprise semiconductor layers GaAs and GaInP. The conductive material includes a metal. The oxide layers underlie GaAs solar cell and comprises barium-zirconium oxide.Preferred Method: The oxide is formed as a monocrystalline oxide and is heated to convert it to an amorphous oxide (formed between the substrate and buffer layer).