TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Material : In the porous electroconductive material, the specific resistance of the outer surface of the porous glass is 10 -4 - 104 (preferably 10 -4 - 101) ohm.cm, the resistance between two outer surfaces of the porous glass is 10 6-4 k - 500 k (preferably 10-4 k - 300 k) ohm, and the specific surface area is 4 - 600 (9 - 400) m2/g. The electroconductive oxide is at least one oxide selected from SnO2, In2O3, ITO (Sn dope In2O3), ZnO, PbO2, ZnSb2O6, CdO, CdIn2O4, ZnGa2O4, Cd2Ga2O4, Zn2SnO4, Tl2O3, TiOF, Ga2O3, GaInO3, Cd2SnO3,Zn2In2O5, AgSbO3CuGaO2, SrCu2O2, amorphous In2O3, Sb dope SnO2 and 15 other oxides, and is preferably at least one oxide selected from SnO2, In2O3, ITO, Sb dope SnO2 and F dope SnO2. Preferred process : A process for producing the transparent porous electroconductive material comprises a step (1) for forming an electroconductive oxide film on the inside surfaces of the pores of the porous glass, and a step (2) for forming the electroconductive oxide film on the outer surfaces of the porous glass. In step (1), the oxide film is formed by (i) a chemical vapor transporting method, (ii) a spattering method, (iii) an impregnating method, (iv) by reacting silanol placed on the surface of the porous glass with an organometallic compound and oxidizing the reaction products by heating, or (v) by coating the pore surfaces with a mixture of a polymer or amino organometal compound and a film-forming material and burning the porous glass so as to obtain oxide film by removing the polymer or amino organometal compound. In step (I1), the oxide film is formed by (i) a chemical vapor transporting method, (ii) a spattering method, or (v) by coating the pore surfaces with a mixture of a polymer or amino organometal compound and a film-forming material and burning the porous glass so as to obtain an oxide film by removing the polymer or amino organometal compound. WIDER DISCLOSURE - A Gretzel-type solar cell photoelectron amplifier contains an electrode made of this invented transparent porous electroconductive material.    EXAMPLE - An SnO2 film was formed on a heat-treated porous glass by reacting silanol groups on the surface of the glass with SnCl4 and H2O at 400 degreesC while flowing a mixture of Ar, O2 gases SnCl4 molecules and H2O. The porous glass had a specific resistance of the outer surface is 6.5 ohm.cm, a resistance between two outer surfaces of 300 k ohm and a specific surface area of 20.5 m2/g.