TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The first terminal and the first insulating protect layer are in contact with the first nitride semiconductor layer. The two terminals are formed in an opposed terminal structure. The second terminal is disposed on the portion corresponding to the rest of the portion, on which the first terminal is disposed. A second conductivity type nitride semiconductor layer has an asperity portion as its top layer. The nitride semiconductor layers except the light-emitting layer in the nitride semiconductor, have a band gap larger than the light-emission band gap.Preferred Property: The linear thermal expansion coefficient of the supporting substrate is 4x10-6-10x10-6/K. The refractive index of the second insulating protect layer is at least1, and not more than 2.5.Preferred Method: The conductive layer is formed by a eutectic junction in the attaching step, which is performed by thermocompression bonding. The different-material-substrate-eliminating step is performed by laser irradiation, polishing, or chemical polishing. An asperity portion is formed on the exposed surface of the nitride semiconductor, which is the second type conductive nitride semiconductor layer, after the different-material-substrate-eliminating step.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The supporting substrate includes at least one of copper (Cu), molybdenum (Mo), or tungsten (W). A metal layer, which includes at least one of aluminum, silver, and rhodium, is formed on the side of the first insulating protect layer not in contact with the nitride semiconductor. The metal layer is in contact with the conductive layer. The light-emitting layer has a quantum well structure, which includes a well layer of AlaInbGa1-a-bN, and a barrier layer of AlcIndGa1-c-dN.a, b, c, d = 0 and 1, or greater than 0;anda+b, c+d = 1 or greater than 1.One of the two layers, which are disposed in the light-emitting layer side is formed of AleGa1-eN, and another layer of the two layers, which is disposed in the light-emitting layer side is formed of AlfGa1-fN.e = greater than 0, but less than 0.05;f = greater than 0, but less than 0.1;andf = greater than e.The impurity concentration of the AleGa1-eN layer is higher than the AlfGa1-fN layer.Preferred Parameter: Cu, Mo, and W, in the supporting substrate is not more than 50, at least50, and at least70%, respectively.