WO2003017384-A1  MAHAN A H ET AL: "H OUT-DIFFUSION AND DEVICE PERFORMANCE IN N-I-P SOLAR CELLS UTILIZING HIGH TEMPERATURE HOT WIRE A-SI:H I-LAYERS" AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1998. SAN FRANCISCO, CA, APRIL 14 - 17, 1998, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. VOL. 507, WARRENDALE, PA: MRS, US, vol. 507, 14 April 1998 (1998-04-14), pages 119-124, XP000976948 ISBN: 1-55899-413-0;  NELSON B P ET AL: "LOW HYDROGEN CONTENT, HIGH QUALITY HYDROGENATED AMORPHOUS SILICON GROWN BY HOT-WIRE CVD" AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES - 1999. SAN FRANCISCO, CA APRIL 5 - 9, 1999, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS. VOL. 557, WARRENDALE, PA: MRS, US, vol. 557, 5 September 1999 (1999-09-05), pages 97-102, XP000895191 ISBN: 1-55899-464-5;  PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10, 31 August 1998 (1998-08-31) & JP 10 125944 A (CANON INC), 15 May 1998 (1998-05-15);  PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10, 31 August 1998 (1998-08-31)&JP 10 125944 A (CANON INC), 15 May 1998 (1998-05-15)US7122736-B2  Guha, S. et al., "Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys at High Deposition Rates for Solar Cell Application," Mat. Res. Soc. Symp. Proc. vol. 377, 1995 Materials Research Society, pp. 621-627.;  Jones et al, "a-Si:H based Triple-Junction Cells Prepared at i-layer Deposition Rates of 10 A/s using a 70 MHz PECVD Technique," 28th Photovoltaic Specialists Conference, Sep. 15-22, 2000, pp. 845-848.;  Jones, S.J. et al., "a-Si:H-based Triple-Junction Cells Prepared at i-layer Deposition Rates of 10 A/s Using a 70 MHz PECVD Technique," Photovoltaic Specialists Conference, 2000, 28-IEEE, Sep. 2000, pp. 845-848.;  Lill, M. and Schrode, B. "Preparation of amorphous hydrogenated silicon-germanium material and solar cells using the thermocatalytic chemical vapor deposition," Appl. Phys. Ltrs, vol. 74, No. 9, Mar. 1, 1999, pp. 1284-1288.;  Mahan, A.H. et al., "H Out-Diffusion and Device Performances in n-i-p Solar Cells Utilzing High Temperature Hot Wire a-Si:H i-Layers," Mat. Res. Cos. Symp. Proc. vol. 507, 1998 Materials Research Society, pp. 119-124.;  Nelson, Brent P. et al., "Hydrogenated Amorphous Silicon Germanium Alloys Grown by the Hot Wire Chemical Vapor Deposition Technique," Mat. Res. Soc. Symp. Proc. vol. 507, 1998 Materials Research Society, pp. 447-452.;  Nelson, Brent P. et al., "Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Thin-Films: Fundamentals to Devices," Mat. Res. Soc. Symp. Proc. vol. 557, 1999 Materials Research Society, pp. 97-102.;  Wang et al, "High-quality 10 A/s amorphous silicon germanium alloy solar cells by hot-wire CVD," preprint of a conference paper, NREL, Oct. 2001.