NOVELTY - A semiconductor thin film is manufactured on a substrate (37) by an interfacial film forming process, in which an interfacial film is formed on the substrate; and a main body film growing process, in which a semiconductor film is deposited and grown. A second energy is added during the interfacial film forming process.    USE - Used in the manufacture of semiconductor thin film on substrate through plasma resolution of raw material gas. It is used to produce a crystalline semiconductor thin film for a thin film transistor used in liquid crystal display devices and for solar cells employing the crystalline semiconductor thin film (claimed).    ADVANTAGE - The process provides a semiconductor thin film that can be directly formed on a substrate, that exhibits improved crystallinity at low temperature and low defect density, and has a smooth surface. It provides a process that exhibits favorable characteristics as well as reliability and that is of favorable productivity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a device for manufacturing a semiconductor thin film of plane parallel type comprising a plasma source for performing plasma resolution of raw material gas, a bias electrode (35) for controlling ion energy upon plasma resolution for irradiating onto the substrate, and substrate heating mechanism, in which a power source frequency of the plasma source is not less than 20 MHz, and an ion energy that is controlled by the bias electrode is 30 eV - 1 keV;    (2) a crystalline semiconductor thin film manufactured through plasma resolution of raw material gas, including interfacial film formed on surface of substrate and main body film formed on interfacial surface;    (3) a thin film transistor using the crystalline semiconductor film;    (4) a liquid crystal display device in which pixels are driven through the thin film transistor;    (5) the production of a thin film transistor employing a crystalline semiconductor thin film of columnar arrangement, in which an upper surface of the semiconductor film is smoothed by controlling ion collision energy at the time of depositing the film through plasma chemical vapor deposition (CVD);    (6) a solar cell employing the crystalline semiconductor thin film of columnar arrangement as photoelectric converting layer, in which an upper surface of the film comprises a main body layer of intrinsic semiconductor is covered by an oxidation-preventing film that is not of columnar structure; and    (7) the production of a solar cell in which the oxidation-preventing film is successively formed after depositing the film without exposure to atmosphere.    DESCRIPTION OF DRAWING(S) - The figure is a schematic view showing the device for the production of a semiconductor thin film.    Vacuum container (31)    Exhaust pump (32)    Discharge electrode (33)    Oscillator (34)    Bias electrode (35)    Substrate (37)    Gas introducing system (38)    Heater (39)