NOVELTY - A photoelectric conversion device comprises first conductivity-type crystalline semiconductor particles (3) deposited on substrate (1); and second conductivity-type semiconductor layers (4) formed on crystalline semiconductor particles. Each of second conductivity-type semiconductor layers has smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith.    USE - The photoelectric conversion device is used for solar power generation.    ADVANTAGE - The surfaces of the crystalline semiconductor particles are covered with the second conductivity-type semiconductor layers to reduce surface recombination, thus improving the conversion efficiency and productivity of the photoelectric conversion device.    DETAILED DESCRIPTION - A photoelectric conversion device comprises:    (1) a substrate serving as a lower electrode;    (2) first conductivity-type crystalline semiconductor particles deposited on substrate;    (3) second conductivity-type semiconductor layers formed on crystalline semiconductor particles;    (4) insulator layer (2) formed among the crystalline semiconductor particles; and    (5) an upper electrode layer (5) formed on the second conductivity-type semiconductor layers.    Each of second conductivity-type semiconductor layers has smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith.    An INDEPENDENT CLAIM is also included for manufacture of a photoelectric conversion device, comprising:    (1) depositing first conductivity-type crystalline semiconductor particles on a substrate serving as a lower electrode;    (2) forming second conductivity-type semiconductor layers on the crystalline semiconductor particles so that p-type or n-type impurities, oxygen, nitrogen, carbon or hydrogen is included in the semiconductor layers with a concentration gradient increasing with thickness;    (3) forming an insulator layer among the crystalline semiconductor particles; and    (4) forming an upper electrode layer on the second conductivity-type semiconductor layers.    DESCRIPTION OF DRAWING(S) - The figure is a cross-sectional view showing the structure of a photoelectric conversion device.    Substrate (1)    Insulator layer (2)    First conductivity-type crystalline semiconductor particles (3)    Second conductivity-type semiconductor layers (4)    Upper electrode layer (5)