NOVELTY - A photovoltaic cell comprises a gallium indium phosphide subcell having a disordered group-III sublattice base; gallium indium arsenide subcell disposed below the gallium indium phosphide subcell; and a semiconductor growth substrate disposed below the gallium indium arsenide subcell having a surface misoriented from a (100) plane by 8-40degrees toward a nearest (111) plane.    USE - For photovoltaic devices.    ADVANTAGE - The invented photovoltaic cell has improved output and efficiency.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (A) a device comprising a high-miscut-angle growth substrate that can be used to enhance the performance of the device or reduce the cost of the device via disordering, increased doping, improved mechanical yield or increased growth rate comprising photodetectors with higher bandgap window layers due to disordering; heterojunction bipolar transistors with higher bandgap emitter, collectors, or heavier doping in a base layer; high-electron-mobility transistors that make use of a higher band gap of a gate layer and a different band offset between gate and channel layers that results from disordering; semiconductor edge-emitting laser and vertical-cavity surface-emitting lasers with higher bandgap lasing regions, higher bandgap charge confinement layers and/or higher refractive index contrast for light confinement or Bragg reflectors resulting from disordering; photonic waveguide devices with different refractive index contrast or sensitivity of index to an applied electric field as a result of disordering; avalanche photodiodes with higher bandgap and/or different electron/hole ionization ratios in a multiplication layer or other regions resulting from disordering; and quantum well photovoltaic cells, lasers and other devices with higher bandgap barrier layers for the wells resulting from disordering;    (B) a solar cell system comprising a solar array having a cell comprising a disordered aluminum indium phosphide (AlInP) window layer; disordered gallium indium phosphide (GaInP) emitter layer disposed below the AlInP window layer; disordered GaInP emitter layer disposed below the GaInP emitter layer; disordered aluminum gallium indium phosphide (AlGaInP) boron BSF (sic) layer disposed below the GaInP base layer; disordered GaInP tunnel junction layer disposed below the AlGaInP BSF layer; a gallium indium arsenide (GaInAs) buffer layer disposed below the GaInP tunnel junction layer; disordered GaInP nucleation layer and window layer disposed below the GaInAs buffer layer; germanium (Ge) diffused region layer disposed below the GaInP nucleation layer and window layer; and high-miscut-angle substrate disposed below the Ge diffused region layer, where the substrate comprises a (115) surface;    (C) a satellite system comprising a satellite; and a solar cell array operably coupled to the satellite;    (D) a method for increasing a GaInP top subcell bandgap comprising providing a Ge substrate with a miscut angle; growing a photovoltaic cell; and positioning the miscut angle toward a (111) plane to disorder and increase the bandgap of the GaInP top subcell;    (E) a method for producing a GaInP top subcell with a higher bandgap causing the GaInP top subcell to have a short cutoff wavelength in external quantum efficiency measurements, a higher open-circuit voltage and a higher maximum-power-point voltage comprising preparing a Ge substrate with a 15.8degrees miscut angle; and growing the GaInP top subcell on the 15.8degrees miscut Ge substrate resulting in a higher bandgap and an external quantum efficiency of 0% for wavelengths longer than 675    nm; (F) a method for increasing a conversion efficiency in a solar cell comprising preparing a Ge substrate with a 15.8degrees miscut angle; and growing a GaInP top subcell on the 15.8degrees miscut Ge substrate; resulting in an efficiency of 29.5% and an open-circuit voltage of 2.7 V; and    (G) a method for increasing a doping and a growth rate on a III-V device comprising disposing the device upon a nominal (001) Ge substrate where a miscut angle is 8-40degrees toward a nearest (111) direction.    DESCRIPTION OF DRAWING(S) - The figure is a cross-sectional view of a 3-junction photovoltaic cell.