TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organo metallic compound has formula given by: R1xMR2yR3z.M = metal;R1 and R2 = alkoxy;R3 = (beta)-diketone complex group, (beta)-ketocarboxylic acid ester complex group, or keto oxy group;x+y+z = m (valence of M);x = 0-m, preferably 0-(m-1);y = 0-m; andz = 0-m.The organic compound is hydrocarbon, alcohol, ether, aldehyde, ketone and/or organic acid, or methane, ethane, propane, ethylene, propylene, acetylene, methylacetylene, methanol, ethanol, propanol, dimethylether, diethylether, methylethyl ether, formaldehyde, acetaldehyde, propanaldehyde, acetone, methyl ethyl ketone, formic acid, acetic acid and/or propionic acid. The counter electrode is covered with a dielectric which is an organic substance having dielectric constant of 6-45. The electrode which is covered with dielectric has surface hardness (Rmax) of 10 mum or less. Preferred Property: The organic compound has molecular weight of 100 or less.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inert gas is helium, argon and/or nitrogen. The inorganic gas is reducing gas, oxidizing gas, water gas, carbon monoxide gas, carbon dioxide gas, nitrogen monoxide gas and/or nitrogen dioxide gas. The organic compound has element chosen from oxygen, nitrogen, sulfur, boron and phosphorus. The mixed gas contains 90-99.9 vol.% of inert gas and 0.1-10 vol.% of reactive gas. The reactive gas contains 0.001-10 vol.% of organic compounds, with respect to mixed gas. Preferred Properties: The high frequency voltage has frequency of 100 kHz or more. The electric power of 1 W/cm2 is applied. The frequency of high frequency voltage is made to discharge as 150 MHz or less, or 200 kHz or more. The base material is a transparent resin film. The high frequency voltage is continuous sine wave. The surface temperature of base material is 500 degreesC or less. Preferred Conditions: The energy processing is performed in air, reducing gas, oxidizing gas, noble gas and/or vacuum. The energy processing is performed at 50-300 degreesC.