TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The N-oxide compound has a partial structure of formula (II) in the molecule:R1-R4 = H, halogen atom, hydroxyl group, nitro group, nitroso group, cyano group, carboxyl group, (un)substituted alkyl group, (un)substituted alkenyl group, (un)substituted cycloalkyl group, (un)substituted aromatic hydrocarbon group, (un)substituted aromatic heterocyclic group, (un)substituted aralkyl group, (un)substituted amino group, (un)substituted alkoxy group, (un)substituted aryloxy group, (un)substituted alkoxycarbonyl group, (un)substituted aryloxy carbonyl group, (un)substituted acyl group or (un)substituted acyloxy group.The atom more than a piece of the substituents, is optionally substituted by sulfur atom, silicon atom, phosphorus atom or boron atom, and a ring is optionally formed by the substituents. The N-oxide compound has a partial structure of formula (III):R1-R9 = as for R1-R4.The N-oxide compound has a partial structure of formula (IV):The N-oxide compound has a partial structure of formula (V):n, m, n' and m' = 0 or more; andRa-Rd = as defined in R1-R4 of formula (II).When n is 2 or more, Ra and Rb are respectively same or different.When n' is 2 or more, Rc and Rd are respectively same or different.The atom more than a piece of the substituent, is optionally substituted by sulfur atom, silicon atom, phosphorus atom or boron atom, and a ring is optionally formed by the substituents. The condensed order of diazine ring and benzene ring is alternate or random. The N-oxide compound is an oligomer or polymer compound having divalent group or monovalent group. The N-oxide compound is a reaction starting material, a product or intermediate product in electrode process.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layers: Layer (3) of the cathode has amorphous structure, and is formed by vapor deposition method, chemical vapor deposition method or sputtering method. Layer (3) contains one or more material chosen from boron oxide, phosphorus pentoxide, alumina, tungsten oxide of formula WhO3h-1 (VIa) molybdenum oxide of formula MoiO3i-1 (VIb) and titanium oxide.h, i = 1-4.Layer (3) contains one or more elements chosen from silicon, germanium, silver, tin, indium and lead, their oxides, complex oxides and sulfides. Layer (4) is formed by vapor deposition method, chemical vapor deposition method or sputtering method, and contains one or more material chosen from lithium, lithium alloy and lithium nitride.