TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Particle: The silicon particle is crystalline silicon particle whose surface is previously removed by etching, or crystalline silicon lump in liquid nitrogen. The silicon particle contains 1010-1021 atom/cm3 of III or V group atoms.Preferred Compound: The high order silane is a cage-like silane compound of formula SiiX2i+2, a chain-shaped silane compound is of formula SiiX2j, or a cyclic silane compound is of formula SikXk;X = hydrogen or halogen atom;i = 2-10;j = 3-10; andk = 6-10.Preferred Property: The silicon particle has particle diameter of 0.35-2 mum.Preferred Process: The silicon-film forming composition is obtained by irradiating with light irradiation having wavelength of 150-450 nm. EXAMPLE - Dry tetrahydrofuran (1 l) and dry lithium metal (in g) (18.3) were bubbled using argon gas. Diphenyl dichlorosilane (333) was added and suspension was stirred at 0 degrees C. Stirring was further continued at room temperature for 12 hours, until lithium metal was completely dissolved. The obtained reaction mixture was poured into ice water (5 l) and the reaction product was settled. The deposit formed by filtration was washed with water and cyclohexane, and vacuum-dried to obtain white solid (140). The obtained solid (100) and dry cyclohexane (1000 ml) were dried at room temperature by bubbling hydrogen chloride gas for 4 hours. Then, aluminum chloride (4) was added and stirred continuously. Further, aluminum-lithium hydride (40) and diethyl ether (400 ml) were added to the above reaction mixture and stirred at room temperature for 1-12 hours. The by-product formed was removed, and the reaction mixture was vacuum-distilled at 70 degrees C and 10 mmHg, to obtain colorless liquid (10). The obtained liquid was irradiated with high-pressure mercury vapor lamp of 500 Watts for 20 minutes, cyclopentasilane (10) was added and stirred in argon atmosphere. The reaction mixture was then diluted with xylene (90) and white precipitate was formed. The precipitate was separated by filtration, and silane group coating liquid containing 1 wt.% of cyclopentasilane was obtained. Silicon powder having mean particle diameter of 100 mum obtained by dry grinding of single-crystal silicon lump having resistivity of 2x10 to the power 3 ohm.cm, was wet ground at 60 degrees C in nitrogen atmosphere for 50 minutes. The ground material was washed with 1% concentrated hydrofluoric acid (60) and ultrapure water (340), to obtain silicon microparticles. To dispersion liquid of the obtained silicon microparticles, 48 % hydrogen fluoride aqueous solution (8.3) and 70 % nitric acid aqueous solution (17.1) were added, and separated by filtration after settling for 2 hours. The obtained product was water-washed with ultrapure water, dried and particles having mean particle diameter of 0.97 micrometer was obtained. 42% of the particles had particle size of 0.35-2 mum. The obtained particles were dissolved in xylene solution. Xylene solution containing 15 wt.% of silicon particles was applied on quartz substrate, dried 200 degrees C for 30 minutes and a film consisting of silicon microparticles was formed. Further, the silane group coating liquid was applied on the quartz substrate with the coating film, bake-processed at 200 degrees C for 30 minutes and then dried at 400 degrees C for 30 minutes, to obtain silicon-film having film thickness of 5.4 micrometer. The silicon-film had resistivity of 1.5x10 to the power 4 ohm/cm and dangling-bond density of 8.8x10 to the power 16 piece/cm3.