NOVELTY - A complementary metal oxide semiconductor image sensor (200) has a non-single-crystal-silicone-base substrate (202); an opaque layer (203) on the substrate; a polysilicon layer (205) on the opaque layer and having a charge-generating region; a source (204) and drain (206) in the polysilicon layer; a gate dielectric layer (208) on the polysilicon layer; and first and second transparent gate electrodes (210, 212).    USE - Used for television, toys, security systems, scanners, mobile phones, digital video cameras, and digital cameras.    ADVANTAGE - The image sensor has reduced manufacturing cost by using non-single-crystal-silicone-base substrate. It has reduced errors in sensing results and reduced image distortion.    DETAILED DESCRIPTION - The complementary metal oxide semiconductor (CMOS) image sensor comprises a non-single-crystal-silicone-base substrate; an opaque layer on the substrate; a polysilicon layer on the opaque layer and having a charge-generating region; a source and drain in the polysilicon layer in which a pre-channel region is formed in the polysilicon layer between the source and drain, and the source is between the charge-generating region and the pre-channel region; a gate dielectric layer on the polysilicon layer; and first and second transparent gate electrodes formed on the gate dielectric layer and respectively above the charge-generating and pre-channel regions.    An INDEPENDENT CLAIM is also included for the manufacture of a CMOS image sensor comprising providing the substrate; forming the opaque layer on the substrate; forming polysilicon layer on the opaque layer; forming source and drain in the polysilicon layer; forming gate dielectric layer on the polysilicon layer; and forming first and second transparent gate electrodes on the gate dielectric layer.    DESCRIPTION OF DRAWING(S) - The figure is a lateral view of the CMOS image sensor.    Image sensor (200)    Substrate (202)    Opaque layer (203)    Source (204)    Polysilicon layer (205)    Drain (206)    Gate dielectric layer (208)    Gate electrodes (210, 212)    Interlayer dielectric layer (214)    Passivation layer (216)    First metal electrode (218)    Second and third metal electrodes (220, 222)