NOVELTY - A gas supply port (650) of a plasma generation chamber (611), supplies gas (630) containing object atoms to be contained in fullerenes (651) into the chamber. A vacuum vessel (610) communicated with a plasma generation chamber, forms a plasma flow (660) into which fullerenes are introduced. A mixture mixes the inclusion object atom and fullerene that are ionized to form gas atom inclusion fullerene.    USE - E.g. for manufacture of gas atom inclusion fullerene used for formation of conductive polymer layer in manufacture of electrode for electronic device (claimed) such as solar cell or optical sensor. Is also applicable for spin electronics and quantum computer.    ADVANTAGE - Improves yield of gas atom inclusion fullerene of high purity.    DETAILED DESCRIPTION - A potential controller (609) connected in downstream side of the plasma generation chamber in vacuum vessel, adjusts the flow rate of object atom ions so that the object atom ions are combined with the fullerene ions for forming gas containing fullerenes. The inclusion object atom is hydrogen atom, nitrogen atom or atom of halogen gas. An electromagnetic coil (603) for generating magnetic field at plasma generation chamber, is provided at upper and lower sides of a vacuum vessel. The plasma generated in the chamber is confined in axial direction in vacuum vessel along the uniform magnetic field formed by the coil. An energy controller (604) controls the energy of electron in plasma. The electric power supplies (621,622) supplies high or radio frequency (RF) electric power to the coil (602) that is wound spirally around the periphery of plasma generation chamber, for assisting in generation of plasma in chamber (611).    INDEPENDENT CLAIMS are also included for the following:    (1) a manufacturing method of gas atom inclusion fullerene which involves supplying gas containing object atoms to be contained in fullerenes through a gas supply port, such that plasma is generated in plasma generation chamber by application of electric field to the phase difference coils wound spirally around the plasma generation chamber. The object atom ions in the downstream side of plasma generation chamber are combined with the fullerene ions so as to form gas containing fullerenes;    (2) gas atom inclusion fullerene which includes hydrogen ion, nitrogen ion or halogen gas ion in inside of fullerene; and    (3) an electronic device which includes the gas atom inclusion fullerene as electroconductivity material for polymeric layer.    DESCRIPTION OF DRAWING(S) - The figure shows a conceptual diagram of manufacturing apparatus of inclusion fullerene. (Drawing includes non-English language text).    coil (602)    electromagnetic coil (603)    energy controller (604)    potential controller (609)    vacuum vessel (610)    plasma generation chamber (611)    high frequency electric power supplies (621,622)    gas containing object atoms (630)    gas supply port (650)    fullerenes (651)    plasma flow (660)