TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The substrate layer comprises a wide band gap semiconductor window material layer that is deposited from a different electrodeposition bath composition to the first and the second semiconductor layers. The first and the second absorber layers are configured to function as photon absorber layers. The first layer deposited is an n-type layer. It comprises a first compound deposited on the substrate layer. At least the second layer and/or the subsequent layers comprise a different compound to the first compound. Preferred Method: The predetermined electrical characteristic corresponds to the degree of p-type or n-type doping; or corresponds to a doping level selected from the set comprising p+-type, p-type, i-type, n-type and n-type. The method further includes making a photovoltaic device. The first and second semiconductor layers are deposited from the same electrodeposition bath composition. The step of selecting the predetermined conditions, including a predetermined deposition voltage level, comprises the following steps for a given electrolytic bath composition under consideration: measuring a photoelectrochemical cell (PEC) signal of a series of samples of the material grown at different deposition voltages; plotting the PEC signal of each the sample verses the applied deposition voltage; identifying deposition voltage regions associated with particular electrical characteristics; and from the plotted and identified voltage deposition regions, selecting a given deposition voltage associated with a desired electrical conductivity. The outermost layer deposited is configured with a metal contact. The metal contact is deposited using a technique of vacuum evaporation. The first compound is deposited from a first electrolytic bath. The second compound is deposited from a second electrolytic bath. Preferred Property: The substrate layer and the other semiconductor layers each have a different band gap energy value to an adjacent layer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The semiconductor based material comprises a compound comprising group I, III and VI elements. The group I element is copper (Cu). The group III element is indium (In). The first compound comprises n-type indium selenide. The second compound comprises CIGS (sic).