TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Component: The color of the photosensor is red, green, or blue. The storage capacitor is a flat plate capacitor having first electrode, second electrode, and dielectric layer between the first and second electrodes. The photosensor further includes transistor for transferring charge between the photosensor and output transistor, source follower transistor (136) for outputting charge accumulated in the transferred charge region that been transferred to the transferred charge region, doped layer of first conductivity type formed in the substrate and adjacent the field oxide region, first doped region of a second conductivity type formed in the doped layer adjacent the charge collection region, first storage capacitor formed over the substrate adjacent the first doped region and connected to the first doped region to store charge collected in the charge collection region, transferred charge region for receiving charge from the charge collection region, and second storage capacitor connected to the transferred charge region. The second electrode of the storage capacitor is connected to a gate of the transfer transistor. The storage capacitor is connected to the charge collection region by a metal contact.The imaging pixel further includes photosensor formed in a substrate, charge collection region formed in the substrate for collecting charge from the photosensor, and charge storage capacitor electrically connected to the charge collector region. The storage capacity of the capacitor is based on the color of the photosensor. The charge storage capacitor is formed fully over the field oxide region or active area. The transferred charge region is connected to the first electrode using an electrical contact. The second electrode is further connected to a gate of a transfer transistor. The first electrode is a titanium nitride layer, doped polysilicon layer, or hemispherical grained polysilicon layer. The second electrode is a platinum metal layer, tungsten metal layer, titanium nitride layer, and doped polysilicon layer. The first conductivity type is p-type, and second conductivity type is n-type. The electrical element is a transfer gate.Preferred Process: The charge storage capacitor is formed by forming a first conductive layer over the substrate having field oxide region, forming a dielectric layer over the first conductive layer, and forming a second conductive layer over the dielectric layer. The formation of CMOS imager further includes forming a second doped region of the second conductivity type in the doped layer spaced from the first doped region to transfer charge from a charge collection area, forming a third doped region of the second conductivity type in the doped layer spaced from the second doped region, forming a fourth doped region of the second conductivity type in the doped layer spaced from the third doped region, forming a photogate over the doped layer between the first and second doped regions, and forming a reset transistor and source follower transistor.Preferred Concentration: The first doped region, second doped region, third doped region, and fourth doped region are doped at a dopant concentration of 1 x 1015-1 x 1016 ions/cm2.Preferred Property: The storage capacity of the capacitor is between 0-20 femtofarads.