US7126052-B2  Fetzer, C.M. et al., Effect of Surfactant Sb on Carrier Lifetime in GaInP Epilayers, J. Appl. Phys., vol. 91, No. 1, Jan. 2002, pp. 200-203.;  Fetzer, C.M. et al., Spectroscopic Study of Surfactant Enhanced Organometallic Vapor Phase Epitaxy Growth of GaInP, J. Appl. Phys., vol. 90, No. 2, Jul. 15, 2001, pp. 1-7.;  Fetzer, C.M. et al., The Use of Surfactant (Sb) to Induce Triple Period Ordering in GaInP, Appl. Phys. Lett., vol. 76, No. 11, Mar. 13, 2000, pp. 1440-1442.;  Fetzer, Christopher, Photoluminescence Studies of Surfactant Modified Microstructures in GaInP, Department of Materials Science and Engineering, Aug. 2001.;  Jun et al, "Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy," Applied Physics Letters, vol. 76, No. 19, pp. 2716-2718, May 8, 2000.;  Jun et al, "Isoelectronic surfactant-induced surface step structure and correlation with ordering in GaInP," Journal of Crystal Growth, vol. 235, pp. 15-24, available online Oct. 12, 2001.;  Jun, S.W. et al., Isoelectronic surfactant-induced surface step structure and correlation with ordering in GaInP, Journal of Crystal Growth 235 (2002), pp. 15-24.;  Jun, S.W. et al., Kinetics of Te doping in disordering GaInP grown by organometallic vapor phase epitaxy, J. Appl. Phys., vol. 90, No. 12, Dec. 15, 2001, pp. 6048-6053.;  Jun, S.W., et al., Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy, J. Appl. Phys., vol. 88, No. 7, Oct. 1, 2000, pp. 1-5.;  Kikkawa, T. et al., Ordered InGaPSb/GaAs based FET and HBT Structures Grown by MOVPE, 2001 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 13th IPRM, May 2001, pp. 464-467, Nara, Japan.;  King et al, "High-efficiency space and terrestrial multijunction solar cells through bandgap control in cell structures," Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, pp. 776-781, May 19-24, 2002.;  Lee et al, "Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy," Journal of Applied Physics, 87(8), pp. 3730-3735, Apr. 15, 2000.;  Lee, R.T. et al. Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy, J. Appl. Phys., vol. 87, No. 8, Apr. 5, 2000, pp. 3730-3735.;  Seong, T.Y. et al., Isoelectronic Dopant Induced Ordering Transition in GaInP Grown by Organometallic Vapour Phase Epitaxy, Surface Science 457 (2000), pp. L381-L385.;  Shurtleff et al, "Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy," Journal of Crystal Growth, vol. 234, pp. 327-336, available online Sep. 30, 2001.;  Shurtleff, J.K. et al., Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy, Journal of Crystal Growth 234 (2002), pp. 327-336.;  Stavrides et al, Fabrication of high efficiency, III-V multi-junction solar cells for space concentrators, IEEE, (2002), pp. 920-922.;  Stringfellow et al, "Surfactant effects on ordering in GaInP Grown by OMPVE," MRS Bulletin, Fall 1999.;  Stringfellow, G.B. et al., Surface Processes in OMVPE_the Frontiers, Journal of Crystal Growth 221 (2000), pp. 1-11.;  Stringfellow, G.B. et al., Surfactant Effects of Dopants on Ordering in GaInP, Journal of Electronic Materials, vol. 29, No. 1,(2000), pp. 134-138.;  Stringfellow, G.B. et al., Surfactant Effects on Ordering in GaInP Grown by OMVPE, MRS Bulletin, Fall 1999.;  Stringfellow, G.B., Order and Surface Processes in III-V Semiconductor Alloys, MRS Bulletin, Jul. 1997, pp. 27-32.