TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step of forming the metallic film over the intermixed layer includes the steps of forming a first group IIIA material layer and a separate Group IIIA material layer as the Group IIIA material sub-layer. The step of intermixing includes a step of heating the film of Group IB material and the layer of group IIIA material to 50-350degreesC for 2-600 seconds. The intermixed layer is alloyed throughout to achieve uniform micro-scale composition. The intermixed layer and the metallic film are annealed at 50-350degreesC after the step of forming, to produce an annealed layer. The method further comprises repeating the steps of depositing, intermixing, forming and annealing at least once to form a precursor layer. The precursor layer is reacted with a Group VIA material to grow the Group IB-IIIA-VIA semiconductor layer. The annealed layer is reacted with a Group VIA material to grow the Group IB-IIIA-VIA semiconductor layer. The intermixed layer and the metallic film are reacted with a Group VI material to grow the Group IB-IIIA-VIA semiconductor layer. The steps of depositing and forming are each performed using electrodeposition.Preferred Component: The Group VIA material includes selenium and sulfur.Preferred Composition: The molar ratio of Group IB material to Group IIIA material in the intermixed layer is larger than 1.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The step of forming the metallic film over the intermixed layer includes the steps of forming a first group IIIA material layer and a separate Group IIIA material layer as the Group IIIA material sub-layer. The step of intermixing includes a step of heating the film of Group IB material and the layer of group IIIA material to 50-350degreesC for 2-600 seconds. The intermixed layer is alloyed throughout to achieve uniform micro-scale composition. The intermixed layer and the metallic film are annealed at 50-350degreesC after the step of forming, to produce an annealed layer. The method further comprises repeating the steps of depositing, intermixing, forming and annealing at least once to form a precursor layer. The precursor layer is reacted with a Group VIA material to grow the Group IB-IIIA-VIA semiconductor layer. The annealed layer is reacted with a Group VIA material to grow the Group IB-IIIA-VIA semiconductor layer. The intermixed layer and the metallic film are reacted with a Group VI material to grow the Group IB-IIIA-VIA semiconductor layer. The steps of depositing and forming are each performed using electrodeposition.Preferred Component: The Group VIA material includes selenium and sulfur.Preferred Composition: The molar ratio of Group IB material to Group IIIA material in the intermixed layer is larger than 1.