TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: A groove is formed in at least one of the first and second substrates. The first substrate has a glass substrate (1). The metal containing film is heated when a predetermined voltage is applied to the metal containing film.Preferred Components: The buffer film is composed of tantalum, silicon-oxygen-based material. The metal containing film is composed of tantalum-silicon-oxygen-nitrogen-based material. The metal containing film contains gold. The first substrate contains sodium. The metal containing film has a sheet resistance which is one-thousandth or less of that of the buffer film. The buffer film has a larger area than the metal containing film. The metal containing film has a meandering shape having longitudinal portions (3a), and if the width of each longitudinal portion is defined as LA, the length of each longitudinal portion is defined as LB, a spacing between the adjacent longitudinal portions is defined as LC, a sheet resistance of each longitudinal portion is defined as Sh, and if the sheet resistance of a part of the buffer film which is exposed from between the adjacent longitudinal portions is defined as Sf, a relationship Shx(LB/LA)x2x100 is less than Sfx(LC/LB). The buffer film is a heating resistant film and the metal containing film is an interconnect.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: A groove is formed in at least one of the first and second substrates. The first substrate has a glass substrate (1). The metal containing film is heated when a predetermined voltage is applied to the metal containing film.Preferred Components: The buffer film is composed of tantalum, silicon-oxygen-based material. The metal containing film is composed of tantalum-silicon-oxygen-nitrogen-based material. The metal containing film contains gold. The first substrate contains sodium. The metal containing film has a sheet resistance which is one-thousandth or less of that of the buffer film. The buffer film has a larger area than the metal containing film. The metal containing film has a meandering shape having longitudinal portions (3a), and if the width of each longitudinal portion is defined as LA, the length of each longitudinal portion is defined as LB, a spacing between the adjacent longitudinal portions is defined as LC, a sheet resistance of each longitudinal portion is defined as Sh, and if the sheet resistance of a part of the buffer film which is exposed from between the adjacent longitudinal portions is defined as Sf, a relationship Shx(LB/LA)x2x100 is less than Sfx(LC/LB). The buffer film is a heating resistant film and the metal containing film is an interconnect.