TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The phonon conduction-impeding medium is liquid metal. The phonon conduction-impeding medium is gallium, indium, gallium-indium, lead, lead-indium, cesium doped gallium-indium, gallium-indium copper, gallium-indium-tin, or mercury. The thermo element is p-type bismuth-tin-tellurium, n-type bismuth-tellurium compound, super lattices of dibismuth tri-tellurium and tin tellurium, bismuth chalcogenides, lead chalcogenides, complex chalcogenide compounds of zinc, bismuth, tantalum, indium, germanium, hafnium, krypton, cesium, and silicon germanium compound, bismuth tin compound, or skutteridites compound of cobalt, tin, nickel, and iron. The device includes dielectric material. The dielectric material maintains spacing between the two metal electrodes. The multiple thermoelectric devices are connected electrically in series and thermally in parallel. The device includes power source coupled to the thermoelectric cooler. The two metal electrodes comprise multi-layered plate of different metals. The multi-layered metal plate is made of nickel-plated copper, or aluminum coated with layers of platinum and titanium tungstide.Preferred Parameters: A temperature gradient is maintained between the solid metal electrodes so that the thermoelectric device operates as thermoelectric power generator.Preferred Methods: The forming of the first base structure includes depositing silicon dioxide layer on surface of the silicon wafer, and depositing composite solid metal electrode structure on the silicon dioxide layer. The depositing of silicon dioxide layer is carried out using chemical vapor deposition, plasma enhanced chemical vapor deposition, or direct thermal oxidation of silicon wafer. The depositing of composite solid metal electrode structure comprises patterning the silicon dioxide layer, etching the patterned silicon dioxide layer to form pits in the silicon dioxide layer, depositing copper seed layer in pits, plating copper onto the seed layer to cover up the pits, polishing the surface of plated copper, and depositing and patterning titanium tungstide and platinum layers on plated copper. The depositing of copper seed layer and titanium tungstide and platinum layers are carried out by physical vapor deposition. The etching of patterned silicon dioxide layer is carried out by plasma etching techniques. The polishing of surface of plated copper is carried out by chemical and mechanical polishing techniques. The depositing of the first thermo element comprises sputtering the film of thermoelectric material onto the base structure, coating photoresist layer with lateral dimensions equal to the dimensions of first thermo element, etching photoresist layer using plasma etching or wet etching, and removing photoresist by dissolving the organic solvents. The depositing of two phonon conduction impeding mediums is carried out by micropipette dispensing techniques, pressure fill techniques, or jet printing techniques. The combining step is carried out by flip-chip backside-to-front aligners.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The phonon conduction-impeding medium is liquid metal. The phonon conduction-impeding medium is gallium, indium, gallium-indium, lead, lead-indium, cesium doped gallium-indium, gallium-indium copper, gallium-indium-tin, or mercury. The thermo element is p-type bismuth-tin-tellurium, n-type bismuth-tellurium compound, super lattices of dibismuth tri-tellurium and tin tellurium, bismuth chalcogenides, lead chalcogenides, complex chalcogenide compounds of zinc, bismuth, tantalum, indium, germanium, hafnium, krypton, cesium, and silicon germanium compound, bismuth tin compound, or skutteridites compound of cobalt, tin, nickel, and iron. The device includes dielectric material. The dielectric material maintains spacing between the two metal electrodes. The multiple thermoelectric devices are connected electrically in series and thermally in parallel. The device includes power source coupled to the thermoelectric cooler. The two metal electrodes comprise multi-layered plate of different metals. The multi-layered metal plate is made of nickel-plated copper, or aluminum coated with layers of platinum and titanium tungstide.Preferred Parameters: A temperature gradient is maintained between the solid metal electrodes so that the thermoelectric device operates as thermoelectric power generator.Preferred Methods: The forming of the first base structure includes depositing silicon dioxide layer on surface of the silicon wafer, and depositing composite solid metal electrode structure on the silicon dioxide layer. The depositing of silicon dioxide layer is carried out using chemical vapor deposition, plasma enhanced chemical vapor deposition, or direct thermal oxidation of silicon wafer. The depositing of composite solid metal electrode structure comprises patterning the silicon dioxide layer, etching the patterned silicon dioxide layer to form pits in the silicon dioxide layer, depositing copper seed layer in pits, plating copper onto the seed layer to cover up the pits, polishing the surface of plated copper, and depositing and patterning titanium tungstide and platinum layers on plated copper. The depositing of copper seed layer and titanium tungstide and platinum layers are carried out by physical vapor deposition. The etching of patterned silicon dioxide layer is carried out by plasma etching techniques. The polishing of surface of plated copper is carried out by chemical and mechanical polishing techniques. The depositing of the first thermo element comprises sputtering the film of thermoelectric material onto the base structure, coating photoresist layer with lateral dimensions equal to the dimensions of first thermo element, etching photoresist layer using plasma etching or wet etching, and removing photoresist by dissolving the organic solvents. The depositing of two phonon conduction impeding mediums is carried out by micropipette dispensing techniques, pressure fill techniques, or jet printing techniques. The combining step is carried out by flip-chip backside-to-front aligners.