TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The first and/or second dopants have a profile optimized for current injection across the interface. The two materials are associated with respective electrical resistances. The PANTEC comprises a stack of greater than or equal to 2 PANTECs operably connected to each other in series and in parallel. The PANTECs are n-types or p-type semiconductor structures.Preferred Method: The method includes coupling a first electrode to the first side of the first region, and a second electrode to the second side of the second region. The second concentration in the second region portion near the second side of the second region is reduced to form on the second region a first region that is more lightly doped than the second region.Preferred Parameter: The barrier height is approximately 3-10 KBT, where KB is the Boltzmann constant and T is the average temperature of the semiconductor structure. The forward electrical potential step has a width smaller than the electron mean free path across the interface. The second length is selected so that the second region is doped more heavily than the first region. The two lengths are selected so that the second resistance is large enough, compared to the first resistance, to generate a temperature difference between a first electron temperature in the first region and a second electron temperature at the interface. The second electrical resistance is greater than or equal to 10 times as great as the first electrical resistance.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The semiconductor materials comprise a material having an electron-phonon coupling factor less than 1x1012 W/m3K.Preferred Material: The semiconductor materials comprise mercury cadmium telluride (HgCdTe), cadmium arsenide (Cd3As2), calcium tin and arsenic-containing compound (CaSnAs2), cadmium sulfide (CdS), cadmium selenium (CdSe), mercury selenide (HgSe), germanium (Ge), gallium arsenide (GaAs), bismuth telluride (Bi2Te3), bismuth selenide (Bi2Se), antimony telluride (Sb2Te3), gallium phosphide (GaP), indium arsenide (InAs), indium antimonide (InSb), indium phosphide (InP), lead telluride (PbTe), lead selenide (PbSe), or tin selenide (SnSe).    TECHNOLOGY FOCUS - METALLURGY - Preferred Material: The semiconductor materials may comprise alloys of HgCdTe, Cd3As2, CaSnAs2, CdS, CdSe, HgSe, Ge, SiGe, GaAs, Bi2Te3, Bi2Se3, Sb2Te3, GaP, InAs, InSb, InP, PbTe, PbSe, and SnSe.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Property: The semiconductor materials comprise a material having an electron-phonon coupling factor less than 1x1012 W/m3K.Preferred Material: The semiconductor materials comprise mercury cadmium telluride (HgCdTe), cadmium arsenide (Cd3As2), calcium tin and arsenic-containing compound (CaSnAs2), cadmium sulfide (CdS), cadmium selenium (CdSe), mercury selenide (HgSe), germanium (Ge), gallium arsenide (GaAs), bismuth telluride (Bi2Te3), bismuth selenide (Bi2Se), antimony telluride (Sb2Te3), gallium phosphide (GaP), indium arsenide (InAs), indium antimonide (InSb), indium phosphide (InP), lead telluride (PbTe), lead selenide (PbSe), or tin selenide (SnSe).