TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The distribution of the high-frequency potential and the introduction of reactive gas into the process volume are realized where the dielectric electrode face is formed by a surface, facing the process volume, of a dielectric areal configuration (27), whose backside (ER) forms with a metallic coupling face (KF) a chamber (10) and the distance of the backside from the coupling face varies along these faces and/or the thickness of the areal configuration varies along these faces and/or the dielectric constant of the areal configuration varies along these faces and that further the reactive gas is introduced into the chamber and is introduced into the process volume through the aperture pattern provided in the areal configuration, and further, between the coupling face and the other metallic electrode face, a high-frequency signal is applied. The dielectric substrate is first coated with an electrically conducting oxide and is subjected to treatment in the plasma process volume. It is coated with zinc oxide, indium oxide, tin oxide, doped or undoped, and subjected to treatment in the plasma process volume. The conducting oxide as a transparent oxide is selected. The dielectric substrate before the treatment in the plasma process volume is coated with a layer of the layer material, to the thickness D-S of 10 nm - 5 microns. The high-frequency field is excited with a frequency f-Hf of 10-500, preferably 13-70 MHz. The chamber is filled with a solid dielectric. Preferred Dimension: The diameter of the circumscribed circle of the substrate is greater than or equal to0.5 m.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The reactive gas contains ammonia, nitrogen, sulfur hexafluoride, carbon tetrafluoride, chlorine, oxygen, fluorine, methane, monosilane, monosilane, hydrogen, phosphine, diborane, trimethylborane or nitrogen trifluoride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The reactive gas contains ammonia, nitrogen, sulfur hexafluoride, carbon tetrafluoride, chlorine, oxygen, fluorine, methane, monosilane, monosilane, hydrogen, phosphine, diborane, trimethylborane or nitrogen trifluoride.