TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The amine is ammonium hydroxide. Preferred Process: The composition is deposited by chemical bath deposition or by spray deposition. (S1) is contacted to the substrate by spraying or dipping. The method further involves cleaning the deposited film with ultrasound for 10 - 60 seconds. The ultrasound is performed once during the deposition of the film. The method involves annealing the deposited film layer at 200degreesC for 10 minutes. The deposited (ZnS/Zn(O,OH)S) film layer is used for final junction formation.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The amine is ammonium hydroxide. Preferred Process: The composition is deposited by chemical bath deposition or by spray deposition. (S1) is contacted to the substrate by spraying or dipping. The method further involves cleaning the deposited film with ultrasound for 10 - 60 seconds. The ultrasound is performed once during the deposition of the film. The method involves annealing the deposited film layer at 200degreesC for 10 minutes. The deposited (ZnS/Zn(O,OH)S) film layer is used for final junction formation.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The solvent is at least partially composed of an alcohol (preferably methanol, isopropanol and/or triethyl amine). The solvent is non-aqueous/aqueous solvent and contains at least 1% methanol, 31% methanol or 100% methanol. EXAMPLE - A thin film containing copper, indium, gallium, and selenium was deposited on a glass substrate to form a precursor layer (CIGS absorber). A chemical bath depositions solution was prepared by mixing thiourea (15 grams) in water (250 ml) and zinc sulfate (5 g) in methanol (250 ml) and water (250 ml) having ammonium hydroxide (55 ml) (28 - 30%). The Depositions solution was deposited on CIGS absorber at 30 - 90degreesC for 10 - 120 minutes. The deposited zinc sulfide, zinc oxide/zinc hydroxide (ZnS/Zn(O,OH)S) layer was annealed in air at 200degreesC. Spray deposition parameters included mixing thiourea (3g) with zinc chloride (0.84 g) in methanol (70 ml). Spray of the mixture was conducted on a CIGS absorber having a temperature of 50 - 80degreesC for 3 - 5 minutes. CIGS absorber was fabricated with a zinc sulfide (ZnS) buffer layer (having a non-aqueous/aqueous solvent composed of 31% methanol). The thickness of the ZnS/Zn(O,OH)S buffer layer was 300 Angstrom . The deposited ZnS/Zn(O,OH)S layer was annealed in air at 200degreesC for 10 minutes. The device was completed with a conducting aluminum doped conducting zinc oxide (ZnO) layer. The final device structure was molybdenum/glass/CIGSS/ZnS (Zn(O,OH)S)/ZnO/metal grid contact (nickel/aluminum). The spectral response curve of the absorber showed lower absorption values at short wavelengths due to a high bandgap of ZnS and conversion efficiency of 17.4% was achieved for the device that was comparable to CIGS/cadmium sulfide (CdS) absorbers.