WO2005053038-A1  LEO G. ET AL: 'Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100) GaAs by metal organic vpor phase epitaxy.' JOURNAL VACUUM SCIENCE & TECHNOLOGY B vol. 14, no. 3, May 1996, pages 1739 - 1744, XP002995683;  LEO G. ET AL: 'Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100) GaAs by metal organic vpor phase epitaxy.' VACUUM SCIENCE & TECHNOLOGY B vol. 14, no. 3, May 1996, pages 1739 - 1744, XP002995683;  MASUDA Y. ET AL: 'MOVPE Seicho CdTe eno Hiso Doping Tokusei.' THE INSTITUTE OF ELECTRONICS, INFORMATION AN COMMUNICATION ENGINEERS GIJUTSU KENKHY HOKOKU. vol. 101, no. 82, 24 May 2001, pages 13 - 18, XP002995680;  NAKANISHI Y. ET AL: 'MOVPE- ho ni yoru GaAs kibanjo CdTe Komaku Seichoso no Denki Tokusei Hyoka.' THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS, GIJUTSU KENKYU HOKOKU. vol. 103, no. 50, 15 May 2003, pages 81 - 85, XP002995679;  UCHIDA K. ET AL: 'MOVPE-ho ni yoru Daimenseki CdTeX-sen.y-sen Gazo Kenshutsuki ni Kansuru Kenkyu (VII)' DAI 64 KAI EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PSYSICS no. 1, 30 August 2003, page 245, XP002995681;  WANG W.S. ET AL: '(100) or (111) heteroepitaxy by organometallic vapor phase epitaxy.' MATERIALS CHEMISTRY AND PHYSICS vol. 51, 1977, pages 178 - 181, XP002995682;  YASUDA K. ET AL: 'MOVPE growth of (100) CdZnTe layers using DiPZn.' CRYSTAL GROWTH vol. 159, 1996, pages 121 - 125, XP000627331;  See also references of EP 1691422A1;  LEO G. ET AL: 'Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100) GaAs by metal organic vpor phase epitaxy.' JOURNAL VACUUM SCIENCE&TECHNOLOGY B vol. 14, no. 3, May 1996, pages 1739 - 1744, XP002995683EP1691422-A1  NAKANISHI Y ET AL: "MOVPE- ho ni yoru GaAs kibanjo CdTe Komaku Seichoso no Denki Tokusei Hyoka. /GROWTH AND ELECTRONIC PROPERTIES OF THICK CdTe LAYERS GROWN ON GaAS BY MOVPE" DENSHI JOHO TSUSHIN GAKKAI GIJUTSU KUNKYU HOKOKU - IEICE TECHNICAL REPORT, DENSHI JOHO TSUSHIN GAKKAI, TOKYO, JP, vol. 103, no. 50, 15 May 2003 (2003-05-15), pages 81-85, XP002995679 ISSN: 0913-5685;  NIRAULA MADAN ET AL: "Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction" JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 83, no. 5, 1 March 1998 (1998-03-01), pages 2656-2661, XP012044770 ISSN: 0021-8979;  See also references of WO 2005053038A1;  See references of WO 2005053038A1US7355185-B2  Leo, G. et al., "Influence of a ZnTe Buffer Layer on the Structural Quality of CdTe Epilayers Grown on (100) GaAs by Metalorganic Vapor Phase Epitaxy", J.Vac.Technol.B., vol. 14, No. 3, pp. 1739-1744, 1996.;  Masuda, Yusuke et al., "Arsenic Doping in CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy", Technical Report of IEICE., vol. 101, No. 82, pp. 13-18, 2001.;  Nakanishi, Yutaro et al., "Growth and Electronic Properties of Thick CdTe Layers Growth on GaAs by MOVPE", Tehnical Report of IEICE., vol. 103, No. 50, pp. 81-85, 2003.;  Uchida, Kei et al., "Study on Detectior for Detecting Large Images of Both CdTe-x Ray and Y Ray by Using MOVPE", Dai 64 Kai Extended Abstracts, the Japan Society of Applied Physics, No. 1, p. 245, 2003 (With Partial English Translation).;  Wang, Wen-Sheng et al., "(100) or (111) Heterohepitaxy of CdTe Layers on (100) GaAs Substrates by Organometallic Vapor Phase Epitaxy", Materials Chemistry and Physics, vol. 51, pp. 178-181, 1997.;  Yasuda, K. et al., "MOVPE growth of (100) CdZnTe Layers Using DiPZn", Journal of Crystal Growth, vol. 159, pp. 121-125. 1996.EP1691422-B1  NAKANISHI Y ET AL: "MOVPE- ho ni yoru GaAs kibanjo CdTe Komaku Seichoso no Denki Tokusei Hyoka. /GROWTH AND ELECTRONIC PROPERTIES OF THICK CdTe LAYERS GROWN ON GaAS BY MOVPE" DENSHI JOHO TSUSHIN GAKKAI GIJUTSU KUNKYU HOKOKU - IEICE TECHNICAL REPORT, DENSHI JOHO TSUSHIN GAKKAI, TOKYO, JP, vol. 103, no. 50, 15 May 2003 (2003-05-15), pages 81-85, XP002995679 ISSN: 0913-5685;  NIRAULA MADAN ET AL: "Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction" JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 83, no. 5, 1 March 1998 (1998-03-01), pages 2656-2661, XP012044770 ISSN: 0021-8979;  NAKANISHI Y. ET AL: 'MOVPE- ho ni yoru GaAs kibanjo CdTe Komaku Seichoso no Denki Tokusei Hyoka.' THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS, GIJUTSU KENKYU HOKOKU. vol. 103, no. 50, 15 May 2003, pages 81 - 85, XP002995679;  MASUDA Y. ET AL: 'MOVPE Seicho CdTe eno Hiso Doping Tokusei.' THE INSTITUTE OF ELECTRONICS, INFORMATION AN COMMUNICATION ENGINEERS GIJUTSU KENKHY HOKOKU. vol. 101, no. 82, 24 May 2001, pages 13 - 18, XP002995680;  YASUDA K. ET AL: 'MOVPE growth of (100) CdZnTe layers using DiPZn.' CRYSTAL GROWTH vol. 159, 1996, pages 121 - 125, XP000627331;  UCHIDA K. ET AL: 'MOVPE-ho ni yoru Daimenseki CdTeX-sen.y-sen Gazo Kenshutsuki ni Kansuru Kenkyu (VII)' DAI 64 KAI EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PSYSICS no. 1, 30 August 2003, page 245, XP002995681;  WANG W.S. ET AL: '(100) or (111) heteroepitaxy by organometallic vapor phase epitaxy.' MATERIALS CHEMISTRY AND PHYSICS vol. 51, 1977, pages 178 - 181, XP002995682;  LEO G. ET AL: 'Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100) GaAs by metal organic vpor phase epitaxy.' JOURNAL VACUUM SCIENCE&TECHNOLOGY B vol. 14, no. 3, May 1996, pages 1739 - 1744, XP002995683