TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The deposition of the n-type semiconductor layer includes radio frequency (RF) sputtering from a stoichiometric zinc sulfide target in a planar magnetron configuration. A layer of metallic material is deposited on the p-type semiconductor absorber layer before the deposition of the n-type semiconductor layer such that the n-type semiconductor layer is deposited on the layer of metallic material. The deposition of the p-type semiconductor absorber layer includes co-sputtering the CIS material from a pair of conductive targets. It may include reactively alternating current (AC) sputtering material from a pair of identical conductive targets in a sputtering atmosphere comprising argon gas and hydrogen selenide gas.Preferred Materials: The discrete layers of conductive materials comprise metallic layer(s) of copper, silver, aluminum, molybdenum, and/or niobium; and barrier layer(s) (2a) of a transition metal nitride material. The discrete layers of conductive materials comprise a first layer of copper; a second layer of silver; and barrier layers. The layer of metallic material comprises zinc. The substrate comprises thin metallic foil including stainless steel, copper or aluminum. The pair of conductive targets comprises a first target comprising a mixture of copper and selenium; and a second target comprising a mixture of indium, aluminum and selenium. The pair of identical conductive targets comprises copper, indium and gallium or copper, indium and aluminum. The barrier layer is titanium nitride, zirconium nitride or hafnium nitride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The deposition of the n-type semiconductor layer includes radio frequency (RF) sputtering from a stoichiometric zinc sulfide target in a planar magnetron configuration. A layer of metallic material is deposited on the p-type semiconductor absorber layer before the deposition of the n-type semiconductor layer such that the n-type semiconductor layer is deposited on the layer of metallic material. The deposition of the p-type semiconductor absorber layer includes co-sputtering the CIS material from a pair of conductive targets. It may include reactively alternating current (AC) sputtering material from a pair of identical conductive targets in a sputtering atmosphere comprising argon gas and hydrogen selenide gas.Preferred Materials: The discrete layers of conductive materials comprise metallic layer(s) of copper, silver, aluminum, molybdenum, and/or niobium; and barrier layer(s) (2a) of a transition metal nitride material. The discrete layers of conductive materials comprise a first layer of copper; a second layer of silver; and barrier layers. The layer of metallic material comprises zinc. The substrate comprises thin metallic foil including stainless steel, copper or aluminum. The pair of conductive targets comprises a first target comprising a mixture of copper and selenium; and a second target comprising a mixture of indium, aluminum and selenium. The pair of identical conductive targets comprises copper, indium and gallium or copper, indium and aluminum. The barrier layer is titanium nitride, zirconium nitride or hafnium nitride.