NOVELTY - A disk-form workpiece based on a dielectric substrate is produced by coating a dielectric substrate before treatment in a plasma process volume with a layer material. The coated substrate is positioned on a metallic electrode face and is etched or coated reactively under plasma enhancement in the plasma process volume.    USE - The method is used for producing a disk-form workpiece based on a dielectric substrate. The workpiece is used for solar cells.    ADVANTAGE - The invented method provides acceptable layer thickness distribution.    DETAILED DESCRIPTION - Production of a disk-form workpiece based on a dielectric substrate comprises treatment in a plasma process volume (PR), formed between two electrode faces (EF1, EF2) facing one another in a vacuum receptacle, and between the electrode faces an electric high-frequency field is generated and in the process volume charged with a reactive gas a high-frequency plasma discharge is generated, where the electrode face is composed of a dielectric material, to this a high-frequency potential is applied with a specified varying distribution along the face and the distribution of the electric field in the plasma process volume is set through the potential distribution on the dielectric electrode face with the substrate the dielectric electrode face is formed or the substrate is disposed on the other electrode face, developed such that it is metallic, further on the electrode face disposed opposite to the substrate the reactive gas is introduced into the process volume from an aperture pattern (29).    The dielectric substrate before treatment in the plasma process volume is at least regionally coated with a layer material to whose specific resistance sigma of 10-5-10-1 ohms.cm and to the resulting surface resistance R-S of the layer applies: R-S=0-10 ohms.cm. The coated substrate is positioned on the metallic electrode face and is etched or coated reactively under plasma enhancement in the plasma process volume.    An INDEPENDENT CLAIM is also included for a vacuum treatment installation with a vacuum receptacle comprising first planar metallic electrode face; second dielectric electrode face, facing the first, which forms a surface of a dielectric areal configuration, metallic coupling face facing the backside of the areal configuration; electric connections on the coupling and on the first electrode face; a gas line system through the coupling face and an areal distributed pattern of apertures through the areal configuration. The areal dielectric configuration is formed by several ceramic tiles.    DESCRIPTION OF DRAWING(S) - The figure is a cross-sectional view of a vacuum treatment installation.    Chamber (10)    Configuration (27)    Aperture pattern (29)    Electrode faces (EF1, EF2)    Backside (ER)    Coupling face (KF)    Plasma process volume (PR)