TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The method includes depositing a noble metal layer by self-assembly onto the wide band gap layer, which is positioned between the noble metal layer and the electrode layer; and depositing a photosensitizing layer (140) by self-assembly onto the noble metal layer, which is positioned between the photosensitizing layer and the wide band gap semiconductor layer. Preferred Component: The self-assembly is electrostatic self-assembly, layer-by-layer covalent self-assembly, or nuclear induced self-assembly. Preferred Parameter: The wide band gap layer has a thickness of 5-1000 (preferably 200) nm. The noble metal layer has a thickness of 10-250 (preferably 100) nm. The photosensitizing layer has a thickness of 1-1000 (preferably 30) nm.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The electrode layer comprises metal(s) of indium-tin-oxide, platinum (Pt), palladium (Pd), gold (Au), or silver (Ag). The wide band gap layer comprises wide band gap n-type semiconductor(s) of tin oxide (SnO2), tungsten oxide (WO3), zinc oxide (ZnO), niobium oxide (Nb2O5), tantalum oxide (Ta2O3), or titanium oxide (TiO2). The noble metal layer comprises Pt, Pd, Ag, ruthenium (Ru), and/or preferably Au. The photosensitizing layer comprises sensitizing semiconductor quantum dot(s) prepared from the group IIB, VIA, and VA (preferably lead sulfide (PbS), zinc sulfide (ZnS), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), mercury telluride (HgTe), mercury selenide (HgSe), lead selenide (PbSe), indium arsenide (InAs), gallium arsenide (GaAs), indium antimonide (InSb), indium arsenic phosphide (InAsP), gallium arsenic phosphide (GaAsP), or preferably indium phosphide (InP)).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Material: The electrode layer comprises metal(s) of indium-tin-oxide, platinum (Pt), palladium (Pd), gold (Au), or silver (Ag). The wide band gap layer comprises wide band gap n-type semiconductor(s) of tin oxide (SnO2), tungsten oxide (WO3), zinc oxide (ZnO), niobium oxide (Nb2O5), tantalum oxide (Ta2O3), or titanium oxide (TiO2). The noble metal layer comprises Pt, Pd, Ag, ruthenium (Ru), and/or preferably Au. The photosensitizing layer comprises sensitizing semiconductor quantum dot(s) prepared from the group IIB, VIA, and VA (preferably lead sulfide (PbS), zinc sulfide (ZnS), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), mercury telluride (HgTe), mercury selenide (HgSe), lead selenide (PbSe), indium arsenide (InAs), gallium arsenide (GaAs), indium antimonide (InSb), indium arsenic phosphide (InAsP), gallium arsenic phosphide (GaAsP), or preferably indium phosphide (InP)).