TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The substrate is a glass plate, a quartz plate, a glass plate coated with an amorphous oxide film as an electric insulator, a quartz plate coated with an amorphous oxide film as an electric insulator or a silicon wafer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The amorphous silicon thin film is formed using chemical vapor deposition, sputtering or evaporation. The method further comprises forming an inert atmosphere or vacuum atmosphere before providing the mixture atmosphere comprising the aluminum halide and the second metal or metal compound to the substrate of the amorphous silicon thin film for the annealing.Preferred Condition: The annealing is performed at 400-600degreesC by a heating unit or an electromagnetic wave. The mixture atmosphere comprises the aluminum halide and the second metal mixed at 150-400degreesC, before the annealing. Preferred Component: The aluminum halide is aluminum chloride, aluminum iodide, aluminum bromide, or aluminum fluoride. The second metal comprises gold, silver, copper, nickel, palladium, or their compounds.Preferred Composition: The aluminum halide and the second metal are mixed in a ratio of 99:1 to 1:99.Preferred Dimension: The amorphous silicon thin film has a thickness of 10?a to 10 microns on the substrate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The amorphous silicon thin film is formed using chemical vapor deposition, sputtering or evaporation. The method further comprises forming an inert atmosphere or vacuum atmosphere before providing the mixture atmosphere comprising the aluminum halide and the second metal or metal compound to the substrate of the amorphous silicon thin film for the annealing.Preferred Condition: The annealing is performed at 400-600degreesC by a heating unit or an electromagnetic wave. The mixture atmosphere comprises the aluminum halide and the second metal mixed at 150-400degreesC, before the annealing. Preferred Component: The aluminum halide is aluminum chloride, aluminum iodide, aluminum bromide, or aluminum fluoride. The second metal comprises gold, silver, copper, nickel, palladium, or their compounds.Preferred Composition: The aluminum halide and the second metal are mixed in a ratio of 99:1 to 1:99.Preferred Dimension: The amorphous silicon thin film has a thickness of 10?a to 10 microns on the substrate.