TECHNOLOGY FOCUS - ELECTRONICS - Preferred Semiconductor: The semiconductor is a metal oxide or metal sulfide semiconductor. Preferred Definitions:    B1,B2 = -N=;    A = 6-membered aromatic group;and    Q = at least one group of formula (Cp-1 to Cp-4, Cp-6, Cp-15), and has at least one carboxyl group, and couples with B1 in asterisk portion.    R62 = H, alkyl or acyl;    R63,R64 = H, alkyl, alkenyl, aryl, heterocyclic, acylamino, alkyl sulfonyl amino, aryl sulfonyl amino, amino, alkylamino, alkylthio, arylthio, alkoxyl, aryloxy, ureido, alkoxy carbonylamino, carbamoyl, carboxyl or alkoxycarbonyl, preferably R64 is group of formula (6);    R65,R67 = H, alkyl, aryl, heterocyclic, acylamino, alkyl sulfonyl amino, aryl sulfonyl amino, amino, alkylthio, arylthio, alkoxyl, aryloxy, ureido, alkoxy carbonylamino, acyl, carboxyl, alkoxycarbonyl or carbamoyl;    R87,R88 = H, alkyl, aryl, heterocyclic, carbamoyl, alkoxycarbonyl, aryloxy carbonyl, carboxyl, cyano, sulfamoyl, alkyl sulfonyl, aryl sulfonyl or nitro;    R89 = H, alkyl, aryl, heterocyclic;    R91 = alkyl, aryl, heterocyclic, carbamoyl, alkoxycarbonyl, aryloxy carbonyl, carboxyl, cyano, sulfamoyl, alkyl sulfonyl, aryl sulfonyl or nitro;    R93,R94 = H, alkyl, aryl, heterocyclic, acylamino, ureido, alkoxy carbonylamino, alkyl or aryl sulfonyl amino, halogen atom, carboxyl, amino, alkylthio, arylthio, alkoxyl or aryloxy.    R9,R10 = R1;    n = 0-3.    When n is 1 or more, R9 and R10 couples to form 5- or 6-membered ring.    SPECIFIC COMPOUNDS - 292 Specific compounds of pigment, such as compounds of formulae (I-1 to I-3) are disclosed.    EXAMPLE - Titanium tetra-isopropoxide (in ml) (62.5) was added to pure water (375) and stirred at room temperature for 10 minutes. Then, 70 mass% nitric acid (2.65) was added and the reaction mixture was heated at 80 degrees C. Stirring was continued for 8 hours and the reaction mixture was concentrated under reduced pressure until the volume of the reaction mixture was set to 200 ml. Further, titanium-oxide powder (140 g) and pure water (125) were added and titanium-oxide suspension was prepared. The obtained suspension was applied on a transparent electroconductivity glass plate coated with tin oxide doped with fluorine. The glass plate was then baked at 300 degrees C for 60 minutes and film-like titanium oxide was formed on the glass plate. Subsequently, the film-like titanium oxide on the glass plate was dipped in solution containing a compound of formula (I-1) (5 g) dissolved in methanol solution (200 ml). Then, trifluoro acetic acid (1 g) was added and subjected to ultrasonic irradiation for 2 hours. The film was then removed, washed and vacuum-dried under chloroform to obtain semiconductor. The semiconductor had excellent stability and high photoelectric conversion efficiency.