TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The construction of the semiconductor material is part of a single assembly, a composite of two or more parts of a single assembly, a single complete assembly, and/or a composite of two or more single complete assemblies.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Materials: The semiconductor material is silicon (Si) and/or germanium (Ge). The semiconductor material is silicon-germanium alloy, silicon-carbon alloy, germanium-carbon alloy, and/or silicon-nitrogen alloy. The semiconductor material is a doped conductive type of Si from a doped p-type silicon, and/or a doped n-type silicon. The grade of the semiconductor material is a metallurgical grade or a semiconductor grade.The semiconductor material is a metal oxide, a metal phosphide, a metal sulfide, a metal arsenide, a metal selenide, and/or a metal telluride.The type of the etching solution is an acidic etching solution, a neutral etching solution, a basic or alkaline etching solution, or a molten etching solution.The acidic etching solution is an acidic aqueous solution from hydrofluoric acid (HF), nitric acid (HNO3), and/or phosphoric acid (H3PO4).The molten etching solution is a solution of a melted salt.The etching solution is aqueous, and temperature of the aqueous etching solution is 20-90degreesC.The neutral etching solution is a neutral aqueous solution including dissolved ions, and an organic solution.The basic or alkaline etching solution is a basic or alkaline aqueous solution of an alkali hydroxide.Preferred Composition: The concentration of solute in the etching solution is greater than or equal to0.001 M or 8-50% (wt. solute/wt. solution).Preferred Component: The semiconductor material includes a non-semiconductor material. The geometrical configuration, shape, or form, of the semiconductor material is amorphous, monocrystalline, poly-crystalline, and/or multi-crystalline.Preferred Method: The first step is performed for a period of time of greater than or equal to1 minute prior to initiating second step of the negative biasing of the semiconductor material, such that the exposed part of the surface reaches a steady-state value of an open circuit potential (OCP) relative to the standard reference electrode. A specifically controlled and directed-processed light, in a form of processed the non-ambient light, is formed from intentional processing of the specifically controlled and directed-generated light, and is directed toward the exposed part of the surface of the semiconductor material. The specifically controlled and directed light source is a halogen lamp, a tungsten-halogen lamp, or a dye laser.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Materials: The semiconductor material is silicon (Si) and/or germanium (Ge). The semiconductor material is silicon-germanium alloy, silicon-carbon alloy, germanium-carbon alloy, and/or silicon-nitrogen alloy. The semiconductor material is a doped conductive type of Si from a doped p-type silicon, and/or a doped n-type silicon. The grade of the semiconductor material is a metallurgical grade or a semiconductor grade.The semiconductor material is a metal oxide, a metal phosphide, a metal sulfide, a metal arsenide, a metal selenide, and/or a metal telluride.The type of the etching solution is an acidic etching solution, a neutral etching solution, a basic or alkaline etching solution, or a molten etching solution.The acidic etching solution is an acidic aqueous solution from hydrofluoric acid (HF), nitric acid (HNO3), and/or phosphoric acid (H3PO4).The molten etching solution is a solution of a melted salt.The etching solution is aqueous, and temperature of the aqueous etching solution is 20-90degreesC.The neutral etching solution is a neutral aqueous solution including dissolved ions, and an organic solution.The basic or alkaline etching solution is a basic or alkaline aqueous solution of an alkali hydroxide.Preferred Composition: The concentration of solute in the etching solution is greater than or equal to0.001 M or 8-50% (wt. solute/wt. solution).Preferred Component: The semiconductor material includes a non-semiconductor material. The geometrical configuration, shape, or form, of the semiconductor material is amorphous, monocrystalline, poly-crystalline, and/or multi-crystalline.Preferred Method: The first step is performed for a period of time of greater than or equal to1 minute prior to initiating second step of the negative biasing of the semiconductor material, such that the exposed part of the surface reaches a steady-state value of an open circuit potential (OCP) relative to the standard reference electrode. A specifically controlled and directed-processed light, in a form of processed the non-ambient light, is formed from intentional processing of the specifically controlled and directed-generated light, and is directed toward the exposed part of the surface of the semiconductor material. The specifically controlled and directed light source is a halogen lamp, a tungsten-halogen lamp, or a dye laser.