TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Condition: Each layer of the gallium indium nitride junction layers has a thickness of 0.2-10 microns, and each successive layer of the gallium indium nitride junction layers has a thickness greater than a thickness of the immediately preceding layer of the gallium indium nitride junction layers.Preferred Component: Each layer of the gallium indium nitride junction layers has a band gap of about 0.7-4.3 eV, with the successive layer of the gallium indium nitride junction layers has a band gap less than a band gap of the immediately preceding layer of the gallium indium nitride junction layers. The transparent conductive coating comprises a nucleation layer formed on the transparent substrate; a lateral epitaxial overgrowth layer of gallium nitride formed on the nucleation layer; and a defect-free gallium nitride layer formed on the lateral epitaxial overgrowth layer. The nucleation layer comprises an aluminum nitride coating formed directly on the transparent substrate in intimate contact with the transparent substrate; and a seed layer of gallium nitride formed on the aluminum nitride coating. The transparent conductive coating comprises gallium nitride layer formed on the transparent conductive coating.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Substrate: The transparent substrate comprises sapphire, zinc oxide, and gallium nitride.Preferred Condition: Each layer of the gallium indium nitride junction layers has gallium content less than the immediately preceding layer of the gallium indium nitride junction layers. The transparent substrate is entirely transparent to electromagnetic radiation. The transparent conductive coating is entirely transparent to electromagnetic radiation.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Substrate: The transparent substrate comprises sapphire, zinc oxide, and gallium nitride.Preferred Condition: Each layer of the gallium indium nitride junction layers has gallium content less than the immediately preceding layer of the gallium indium nitride junction layers. The transparent substrate is entirely transparent to electromagnetic radiation. The transparent conductive coating is entirely transparent to electromagnetic radiation.