NOVELTY - A zinc selenide film on a silicon substrate is grown by performing high temperature annealing to a first silicon-germanium epitaxial layer in situ; growing a second and optionally a third silicon-germanium epitaxial layer, and performing high temperature annealing in situ during both growing periods; growing a pure germanium layer on a surface of the top epitaxial layer; and growing the zinc selenide layer on the pure layer.    USE - For growing a ZnSe film on a silicon substrate. The ZnSe epitaxial semiconductor structure is applicable to the manufacture of elements as white/blue/green light-emitting diodes (LED), visible-sensitivity emitter bipolar transistors and solar cells. It is usable as chips of III-IV group materials and in the integration of chips of III-V group and IV group materials (claimed).    ADVANTAGE - The process greatly reduces the dislocation density of the ZnSe layer, and improves the surface roughness. It solves the problems of anti-phase domain due to growth of polar materials on non-polar material using off-cut angle Si substrate. It is free from diffusion problems between different atoms while generally growing ZnSe layers on the Si substrate.    DETAILED DESCRIPTION - Growing of a zinc selenide (ZnSe) film on a silicon (Si) substrate includes providing a clean flat Si substrate; growing a first silicon-germanium (SiGe) epitaxial layer with a given thickness to contain a large amount of threading dislocation created by lattice dislocation at a bottom of the epitaxial layer and interfaces; performing high temperature annealing to the first SiGe epitaxial layer in situ to reduce threading dislocation density; growing a second SiGe epitaxial layer and optionally a third SiGe epitaxial layer to terminate the threading dislocation propagating upward from the first epitaxial layer with the produced strained interfaces, and performing high temperature annealing in situ during both growing periods; growing a pure germanium (Ge) layer on a surface of the top epitaxial layer obtained in the step of growing the second and third epitaxial layers; and eventually growing the ZnSe layer on the pure Ge layer.    An INDEPENDENT CLAIM is also included for a ZnSe epitaxial semiconductor structure, comprising a Si substrate; a first SiGe epitaxial layer with Ge mole fraction of greater than or equal to70%; a second SiGe epitaxial layer with higher Ge mole fraction; optionally a third SiGe epitaxial layer with Ge mole fraction higher than that of the second SiGe epitaxial layer; a pure Ge layer; and a ZnSe layer as the top layer. The first SiGe epitaxial layer can, at the bottom of the layer and interfaces, contain a large amount of threading dislocation created by lattice dislocation. The second SiGe epitaxial layer and the optional third SiGe epitaxial layer can, with the strained interfaces, terminate the threading dislocation propagating upward from the first epitaxial layer.    DESCRIPTION OF DRAWING(S) - The figure is a scheme showing the integration of II-IV groups and silicon materials in a process of growing a ZnSe film on silicon substrate.