TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: (S1) Has a thickness of less than or equal to 10 (preferably less than or equal to 5, especially less than or equal to2) nm. (S1) Further comprises a coating including oxides and/or alloys of platinum, nickel, titanium, zirconium, hafnium, vanadium, neobium, tantalum or zirconium carbide (preferably metal carbide coating).Preferred carbon nanosheet: (S2) Contains one to three graphene layers (preferably single graphene layer). (S2) Has a specific surface area of 1000 - 2600 m2/g. (S2) Has a height of 100 nm - 8 microns. (S2) Is in substantially pure form and is a freestanding nanosheet disposed on its edge on a substrate. (S2) further comprises several carbon nanosheets (preferably aligned) having thickness of less than or equal to 2 nm. Preferred Method: In (M1) and (M2), RF-PECVD is used to form (S1) and (S2). The RF-PECVD is inductively (preferably capacitively) coupled. (M1) Further involves increasing the substrate temperature during nucleation phase of (S1) synthesis to form (S2) containing a single graphene layer. (M1) and (M2) Further involves attaching a grounding electrode to the substrate during a nucleation phase of nanoflake on the substrate. In (M1), the substrate temperature is 550 - 950degreesC. In (M2), the substrate temperature is 550 - 950 (preferably 680 - 720)degreesC. The PECVD chamber pressure is 50 - 200 mTorr. The PECVD plasma power is greater than or equal to 700 W. The CVD source gas contains methane with methane to hydrogen ratio of 0.05:99.95 - 100:0. The CVD source gas flow contains acetylene with acetylene to hydrogen ratio of 0.05:99.95 - 60:40. In (M3) the step of reacting involves heating the coated nanoflakes to react the metal with carbon in the nanoflakes. In (M3), (S1) comprise (S2) and the metal coating contains a zirconium coating.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: (S1) Has a thickness of less than or equal to 10 (preferably less than or equal to 5, especially less than or equal to2) nm. (S1) Further comprises a coating including oxides and/or alloys of platinum, nickel, titanium, zirconium, hafnium, vanadium, neobium, tantalum or zirconium carbide (preferably metal carbide coating).Preferred carbon nanosheet: (S2) Contains one to three graphene layers (preferably single graphene layer). (S2) Has a specific surface area of 1000 - 2600 m2/g. (S2) Has a height of 100 nm - 8 microns. (S2) Is in substantially pure form and is a freestanding nanosheet disposed on its edge on a substrate. (S2) further comprises several carbon nanosheets (preferably aligned) having thickness of less than or equal to 2 nm. Preferred Method: In (M1) and (M2), RF-PECVD is used to form (S1) and (S2). The RF-PECVD is inductively (preferably capacitively) coupled. (M1) Further involves increasing the substrate temperature during nucleation phase of (S1) synthesis to form (S2) containing a single graphene layer. (M1) and (M2) Further involves attaching a grounding electrode to the substrate during a nucleation phase of nanoflake on the substrate. In (M1), the substrate temperature is 550 - 950degreesC. In (M2), the substrate temperature is 550 - 950 (preferably 680 - 720)degreesC. The PECVD chamber pressure is 50 - 200 mTorr. The PECVD plasma power is greater than or equal to 700 W. The CVD source gas contains methane with methane to hydrogen ratio of 0.05:99.95 - 100:0. The CVD source gas flow contains acetylene with acetylene to hydrogen ratio of 0.05:99.95 - 60:40. In (M3) the step of reacting involves heating the coated nanoflakes to react the metal with carbon in the nanoflakes. In (M3), (S1) comprise (S2) and the metal coating contains a zirconium coating. EXAMPLE - Highly doped single crystal silicon (100) wafers were used as a substrate for carbon nanoflake deposition. Self-assembled polystyrene nanospheres (419 nm diameter) were used as lithography masks. The nanospheres were diluted in a solution of surfactant triton X-100/methanol and self-assembled nanosphere single-layer masks were created by a spin-coater at 900 rpm. Thin films of nickel (10 - 30 nm thick) were deposited on the coated silicon substrates by electron-beam vaporization. Carbon nanoflakes were grown on the nickel coating silicon substrate using an inductively coupled RF-PECVD system. During deposition, the RF power, substrate temperature, and deposition pressure were maintained at 900 W, 680degreesC, and 70 - 90 mTorr, respectively. Methane was used as the carbon source in hydrogen atmosphere with the concentration of methane varying from 10 - 40 %, overall gas flow rates at 10 sccm and deposition of 5 - 10 minutes to obtain carbon nanoflakes of desired sample thickness.