TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Particle: The metal oxide semiconductor particle contains at least one of titanium oxide, zinc oxide, tin oxide and niobium oxide. Preferred Method: The amount of metal atom complex is 0.01-100 wt.% with respect to the total metal semiconductor particle. The metal oxide semiconductor electrode is subjected to pressurization processing, ultrasonic welding processing, microwave irradiation processing, ultraviolet light irradiation processing, sunlight irradiation processing, or ozone treatment. The film forming method is an inkjet printing method. Preferred Paste: The processed metal oxide semiconductor particle in the paste is 10 wt.% or more and viscosity of the paste is 0.02 Pa.s or less. The metal oxide semiconductor paste contains processed metal semiconductor particle (0.1-90 wt.%) with respect to solvent. The solvent is 1-30C linear primary alkyl alcohol. A resin binder (0.01-100 wt.%), is added to the semiconductor particle.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Complex: The metal atom complex has diketonate compound structure of formula (2) preferably.M=1-6C valent metal;andR1-R3=H or univalent substituent.The broken line shows non-locating bond in diketonate compound structure.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Particle: The metal oxide semiconductor particle contains at least one of titanium oxide, zinc oxide, tin oxide and niobium oxide. Preferred Method: The amount of metal atom complex is 0.01-100 wt.% with respect to the total metal semiconductor particle. The metal oxide semiconductor electrode is subjected to pressurization processing, ultrasonic welding processing, microwave irradiation processing, ultraviolet light irradiation processing, sunlight irradiation processing, or ozone treatment. The film forming method is an inkjet printing method. Preferred Paste: The processed metal oxide semiconductor particle in the paste is 10 wt.% or more and viscosity of the paste is 0.02 Pa.s or less. The metal oxide semiconductor paste contains processed metal semiconductor particle (0.1-90 wt.%) with respect to solvent. The solvent is 1-30C linear primary alkyl alcohol. A resin binder (0.01-100 wt.%), is added to the semiconductor particle. Preferred Definitions:    M=magnesium, scandium, gallium, indium, barium, strontium, lanthanum, tin, yttrium and/or aluminum metal atom.    EXAMPLE - P25 (titanium oxide) (in g) (12) and bis(acetyl acetonato) titanium oxide ((Ti-O-acac)2) (0.6), were added to ethanol (20), and dispersed with zirconia bead, and a metal oxide semiconductor paste was obtained. The paste had viscosity of 2.3x10-3 Pa.s. The paste was applied on a transparent electrode base material to form a metal oxide semiconductor porous layer. A photoelectric conversion electrode was produced which was used for assembling a photoelectric conversion cell. Conversion efficiency of photoelectric conversion cell was excellent. The metal oxide semiconductor paste had excellent dispersion stability.