TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Property: The semiconductor is spectrally sensitized with the compound (I).Preferred Compounds: The semiconductor has a nitrogen-containing compound of formula (II) adsorbed on its surface.Z1,Z2 = oxygen atom, sulfur atom or N-Ra group;Ra = as R1,R2;R3-R6 = H or substituent;p = 0 or 1; andq = 1.R3 and R4, or R5 and R6 are optionally bonded to form a condensed ring.The semiconductor may have compound(s) of formula (III)-(V) adsorbed on its surface.R103-R108 = H or substituent;R109 = alkyl, aryl, heterocyclic, acyl amino, amino, cyano, carboxyl, alkoxy carbonyl, carbamoyl, alkoxy, aryloxy, alkylthio, arylthio, ureido or alkoxy carbonyl amino group; andR110, R111 = optionally substituted aliphatic, aromatic or heterocyclic group, or acyl group.R1 and R2, R103 and R106, R103 and R104 or R105 and R106 may bond to form condensed ring.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor surface has metal oxide or metal sulfide. Preferred Definitions:    n = 1;    m = 0 or 1;    Ar2 = thienylene group; and    Cp = group of formula (Cp-3) or (Cp-6).    R21 = alkyl, aryl, heterocyclic, acyl amino, amino, cyano, carboxyl, alkoxy carbonyl, carbamoyl, alkoxy, aryloxy, alkylthio, arylthio, ureido or alkoxy carbonyl amino group;    R22 = optionally substituted aliphatic, aromatic or heterocyclic group, or acyl group;    B1 = nitrogen atom or =C-R23 group;    B2 = nitrogen atom or =C-R24 group;    B3 = nitrogen atom or =C-R25 group;    B4 = nitrogen atom or =C-R26 group; and    R23-R26 = H, alkyl, alkenyl, aryl, heterocyclic, acyl amino, alkane, aryl sulfonyl amino, alkyl thio, aryl thio, alkoxy, aryloxy, ureido, alkoxy carbonyl amino, carbamoyl, sulfamoyl, cyano, carboxyl, acyl, aryloxy carbonyl or alkoxy carbonyl group.    SPECIFIC COMPOUNDS - 212 compounds of formula (I) are disclosed, such as compounds of formulae (163), (183) and (203).    EXAMPLE - Titanium tetra isopropoxide (62.5 ml) was dissolved in pure water (375 ml), and stirred vigorously. Nitric acid solution (2.65 ml) was added and heated at 80 degrees C. The heated mixture was stirred for 8 hours and concentrated under reduced pressure. Titanium oxide powder (140 g) was added, and titanium oxide suspension was prepared. The suspension was applied on a transparent electroconductive glass panel, baked for 60 minutes at 300 degrees C, and a film-like titanium oxide was formed on the support. A solution which dissolved compound of formula (6) (5 g) in methanol solution (200 ml) was prepared. The support with titanium oxide film was dipped in the solution. Trifluoroacetic acid (1 g) was added, and ultrasonic irradiation was performed for 2 hours. The titanium oxide film was washed and vacuum-dried under chloroform, after the reaction, and an optoelectric transducer was obtained. The transducer had high durability, photoelectric conversion efficiency and stability.