NOVELTY - Solar cell structure (100), comprises silicon nitride anti-reflective (AR) layer positioned on top-side of n+ layer; silver contacts (110) positioned on portions of silicon nitride AR layer; uniform A1 back-surface field (BSF) layer (112) having top-side and back-side, the top-side being positioned on back-side of p-silicon substrate (114); and A1 contact layer (108) positioned on back-side of BSF layer.    USE - The solar cell structure is used for production of electricity.    ADVANTAGE - Solar cell structure has superior fill factor (FF), superior open circuit voltage (Voc), superior short circuit current density (Jsc), superior blue response, superior series resistance (Rs), superior shunt resistance, superior junction leakage current density (Jo2), superior bulk lifetime, superior back surface field, superior emitter saturation current density (Joe), superior base saturation current density (Job), superior grid design, gridline width, and gridline shrinkage, and final metal gridline resistivity. The structure has a FF of 0.75-0.85, Voc of 600-650 mV, and Jsc of 28-36 mA/cm2. The structure also has Rs of 0.01-1 Omega-cm2, a shunt resistance of 1000-5000 kOmega, Jo2 of 1-10 nA/cm2, and a contact resistance (rhoc) of 0.01-3 mOmega-cm2.    DETAILED DESCRIPTION - Solar cell structure, comprises:    (i) a co-fired p-type silicon substrate having a top-side and a back-side, where bulk lifetime is 20-125 ms;    (ii) an n+ layer formed on top-side of p-silicon substrate;    (iii) a silicon nitride AR layer positioned on the top-side of the n+ layer;    (iv) silver (Ag) contacts positioned on portions of the silicon nitride AR layer, where the Ag contacts are in electronic communication with the n+ layer;    (v) a uniform A1 BSF layer having a top-side and a back-side, the top-side of the A1 BSF layer being positioned on the back-side of the p-silicon substrate; and    (vi) an A1 contact layer positioned on the back-side of the A1 BSF layer.    INDEPENDENT CLAIMS are also included for:    (a) a method for fabricating a silicon solar cell structure, comprising providing a p-silicon substrate having a top-side and a back-side; forming a n+ layer on the top-side of the p-silicon substrate; forming a silicon nitride AR layer on the top-side of the n+ layer; forming Ag contacts on the silicon nitride AR layer using a screen-printing technique; forming an A1 contact layer on the back-side of the p-silicon substrate using a screen-printing technique; co-firing of the p-silicon substrate having the n+ layer, silicon nitride AR layer, Ag metal contacts, and A1 contact layer; and forming a co-fired silicon solar cell structure, where the Ag contacts are in electrical communication with the n+ layer;    (b) a method for co-firing a silicon solar cell, comprising providing a silicon solar cell structure; disposing the p-silicon substrate having the n+ layer, silicon nitride AR layer, Ag metal grid, and A1 contact layer, into a belt furnace; heating the belt furnace at 50-100degreesC/second to 700-900degreesC; holding the temperature in the belt furnace at 700-900degreesC for 1-5 seconds; and reducing the temperature in the belt furnace at 50-100degreesC/second; and    (c) a product formed by the process.    DESCRIPTION OF DRAWING(S) - The figure shows a silicon solar cell structure.    Solar cell structure (100)    Emitter (104)    A1 contact layer (108)    Ag contacts (110)    BSF layer (112)    Substrate (114)