NOVELTY - An oxide sintered body comprises indium, tungsten, and zinc. Tungsten is contained at tungsten/indium atomic number ratio of 0.004-0.023, and zinc is contained at zinc/indium atomic number ratio of 0.004-0.100. The sintered body has resistivity of less than or equal to1 kiloohm-cm.    USE - The oxide sintered body is used for manufacturing amorphous transparent conductive thin film and sputtering target. The conductive thin film is used in solar batteries, and display elements such as LCD elements, organic electroluminescence (EL) elements, inorganic EL elements, and touch panels.    ADVANTAGE - The inventive oxide sintered body has low resistivity and provides an amorphous transparent conductive thin film with low internal stress, low resistivity, and high transmittance in the visible light range.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (A) a sputtering target comprising the oxide sintered body processed into a tabular form and attached to a cooling metal plate;    (B) a transparent conductive thin film comprising an amorphous transparent conductive thin film formed on a substrate using the above sputtering target, and having an internal stress of less than or equal to1x1010 dyne/cm2 (absolute value) and a resistivity of less than or equal to9x10-4 ohm-cm;    (C) manufacture of oxide sintered body by preparing indium oxide (In2O3) powder with an average grain size of less than or equal to1 microns, tungsten oxide (WO3) powder with an average grain size of less than or equal to1 microns, and zinc oxide (ZnO) powder with an average grain size of less than or equal to1 microns, so that tungsten is at W/In atomic number ratio of 0.004-0.023 and zinc is at Zn/In atomic number ratio of 0.004-0.100; mixing the prepared powder for 10-30 hours; granulating the mixed powder until the average grain size is 20-150 microns; molding the obtained granulated powder by cold isostatic press with a pressure of 2-5 ton/cm2; and sintering the obtained compact at 1200-1500degreesC for 10-40 hours in an atmosphere where oxygen is introduced into the atmosphere of a sinter furnace at 50-250 L/minute/0.1 m3 furnace volume;    (D) manufacture of sputtering target by processing the oxide sintered body into a tabular form; grinding the sputtering face so that the maximum height is less than or equal to3 microns; and attaching the oxide sintered body to a cooling metal plate; and    (E) manufacture of amorphous transparent conductive thin film by forming thin film formed on a substrate using the sputtering target by a sputtering method with target-substrate distance of 80-150 mm at the time of sputtering and under the sputtering gas pressure of 0.8-1.5 Pa.