NOVELTY - A device comprises a first semiconductor light emitting device (4) containing a stack of semiconductor layers (8, 10) including an active region (12) and an optical element (2) bonded to light emitting device that is elongated in a first direction and shaped to direct a portion of light emitted by active region perpendicular to a central axis of the device and optical element.    USE - As light detectors and solar cells.    ADVANTAGE - Bonding an optical element to a light emitter increases the amount of light extracted from the top of the device and the ratio of top light to side light, allowing any optics used with the device to be tailored to top light resulting in a more efficient and compact system. The light extraction efficiency through surface of light emitter bonded to optical element is improved compared to conventional epoxy encapsulated light emitters. The light emitter need not be subjected to damaging stress experienced by epoxy encapsulated light emitters. In the absence of epoxy encapsulants, which degrade at low temperature, light emitter can at high temperatures. The light output of the light emitter can be increased by running the light emitter at higher current densities. Total internal reflection at the interface of the surface and the encapsulant would be minimized by the shape and size of optical element.    DETAILED DESCRIPTION - A device comprises a first semiconductor light emitting device (4) containing a stack of semiconductor layers (8, 10) including an active region (12) and an optical element (2) bonded to light emitting device that is elongated in a first direction and shaped to direct a portion of light emitted by active region perpendicular to a central axis of the device and optical element. The bond is at an interface disposed between the optical element and the light emitting device and is free of organic based adhesives.    DESCRIPTION OF DRAWING(S) - The figure shows schematic diagram of an optical element and light emitter.    Optical element (2)    Light emitter (4)    Semiconductor layers (8, 10)    Active region (12)    Intersect surface (24)    Antireflection coating (25)