TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The sputtering method is direct current sputtering method.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: Alternatively, the oxide sintered body comprises indium (In), tungsten (W), zinc (Zn), and silver (Ag), where tungsten is contained at W/In atomic number ratio of 0.004-0.023, zinc is contained at Zn/In atomic number ratio of 0.004-0.100, and silver is contained at Ag/In atomic number ratio of 0.001-0.010. The sintered body has bixbyite type indium oxide crystalline phase as a main phase. A tungsten oxide crystalline phase is not included. Preferred Properties: The oxide sintered body has a resistivity of less than or equal to1x10-1 ohm-cm and a density of greater than or equal to6.2 g/cm3. The average crystalline grain size of indium oxide crystalline phase is less than or equal to10 microns.Preferred Method: In sintering step, the temperature is raised by 0.5-3degreesC/minute. In cooling step, the temperature is decreased by 0.1-1degreesC/minute to 1000degreesC. A reductive process is conducted to the obtained oxide sintered body by heating under non-oxidizing atmosphere.Preferred Gas: The sputtering gas comprises oxygen gas (0-15 vol.%) mixed with pure argon gas.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: Alternatively, the oxide sintered body comprises indium (In), tungsten (W), zinc (Zn), and silver (Ag), where tungsten is contained at W/In atomic number ratio of 0.004-0.023, zinc is contained at Zn/In atomic number ratio of 0.004-0.100, and silver is contained at Ag/In atomic number ratio of 0.001-0.010. The sintered body has bixbyite type indium oxide crystalline phase as a main phase. A tungsten oxide crystalline phase is not included. Preferred Properties: The oxide sintered body has a resistivity of less than or equal to1x10-1 ohm-cm and a density of greater than or equal to6.2 g/cm3. The average crystalline grain size of indium oxide crystalline phase is less than or equal to10 microns.Preferred Method: In sintering step, the temperature is raised by 0.5-3degreesC/minute. In cooling step, the temperature is decreased by 0.1-1degreesC/minute to 1000degreesC. A reductive process is conducted to the obtained oxide sintered body by heating under non-oxidizing atmosphere.Preferred Gas: The sputtering gas comprises oxygen gas (0-15 vol.%) mixed with pure argon gas. EXAMPLE - In2O3 powder with an average grain size of less than or equal to1 microns, WO3 powder with an average grain size of less than or equal to1 microns, and ZnO powder with an average grain size of less than or equal to1 microns were blended so that tungsten was in W/In atomic number ratio of 0.004-0.023 and zinc was in Zn/In atomic number ratio of 0.004-0.100, and were added with water into a plastic pot and mixed in a wet process ball mill for 18 hours. After mixing, the slurry was taken out, filtered, dried, and granulated. The granulated powder was molded using a cold isostatic press with a pressure of 3 ton/cm2. The obtained compact was sintered at 1450degreesC for 20 hours in an atmosphere where oxygen was introduced into the atmosphere of sinter furnace at 100 L/minute/0.1 m3 furnace volume. At the time of cooling after sintering, the oxygen introduction was stopped, and the temperature was decreased to 1000degreesC at 1degreesC/minute. The sintered body has a density of 6.8-7 g/cm3.