TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The step of growing the first epitaxial layer and the step of growing the pure Ge layer are conducted by ultra-high vacuum chemical vapor deposition under growing gas pressure of 20-100 mTorr at 350-650degreesC. The step of growing the ZnSe layer is conducted by molecular beam epitaxy. Further, the high temperature annealing treatment is performed in situ at 700-750degreesC for 0.25-0.5 hour. The Si substrate in the providing step is cleaned by the standard cleaning procedure. It is rinsed with a hydrofluoric acid solution (10 wt.%), and is pre-baked at 800degreesC for 10 minutes to remove oxide layer. The high temperature annealing is performed in situ at 750degreesC for greater than or equal to15 minutes.Preferred Parameters: The epitaxy growing temperature is 400degreesC. The annealing gas pressure is 20 mTorr.Preferred Component: The first SiGe epitaxial layer is Si0.1Ge0.9 of greater than or equal to0.1, preferably 0.5-0.8 microns thick. The second SiGe epitaxial layer is Si0.05Ge0.95 of greater than or equal to0.1, preferably 0.5-0.8 microns thick. The third SiGe epitaxial layer is Si0.02Ge0.98 of greater than or equal to0.1, preferably 0.5-0.8 microns thick.The atmosphere used in the high temperature annealing in situ is hydrogen. The Ge molar content of the first SiGe epitaxial layer is 70-90%. The Ge molar content of the second SiGe epitaxial layer is 80-95%. The ZnSe layer can be replaced using III-V group heterogeneous epitaxial materials from zinc-magnesium-selenide (ZnMgSe), zinc telluride (ZnTe), zinc-sulfur-selenide (ZnSSe), indium selenide (InSe), cadmium selenide (CdSe), zinc sulfide (ZnS), or gallium selenide (GaSe).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The step of growing the first epitaxial layer and the step of growing the pure Ge layer are conducted by ultra-high vacuum chemical vapor deposition under growing gas pressure of 20-100 mTorr at 350-650degreesC. The step of growing the ZnSe layer is conducted by molecular beam epitaxy. Further, the high temperature annealing treatment is performed in situ at 700-750degreesC for 0.25-0.5 hour. The Si substrate in the providing step is cleaned by the standard cleaning procedure. It is rinsed with a hydrofluoric acid solution (10 wt.%), and is pre-baked at 800degreesC for 10 minutes to remove oxide layer. The high temperature annealing is performed in situ at 750degreesC for greater than or equal to15 minutes.Preferred Parameters: The epitaxy growing temperature is 400degreesC. The annealing gas pressure is 20 mTorr.Preferred Component: The first SiGe epitaxial layer is Si0.1Ge0.9 of greater than or equal to0.1, preferably 0.5-0.8 microns thick. The second SiGe epitaxial layer is Si0.05Ge0.95 of greater than or equal to0.1, preferably 0.5-0.8 microns thick. The third SiGe epitaxial layer is Si0.02Ge0.98 of greater than or equal to0.1, preferably 0.5-0.8 microns thick.The atmosphere used in the high temperature annealing in situ is hydrogen. The Ge molar content of the first SiGe epitaxial layer is 70-90%. The Ge molar content of the second SiGe epitaxial layer is 80-95%. The ZnSe layer can be replaced using III-V group heterogeneous epitaxial materials from zinc-magnesium-selenide (ZnMgSe), zinc telluride (ZnTe), zinc-sulfur-selenide (ZnSSe), indium selenide (InSe), cadmium selenide (CdSe), zinc sulfide (ZnS), or gallium selenide (GaSe).