TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Material: The first layer may comprise a glassy thin-film electrolyte. The third layer has material with structural characteristic of glassy, amorphous, nano-crystalline, ceramic, or composite. The substrate layer may comprise ceramic or glass.    TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Apparatus: The first electrochemical layer comprises an electrolyte layer. The third layer is connected to first side portion of the first layer by sputter deposition, physical vapor deposition, electron beam evaporation, electron-beam directed vapor deposition, thermal evaporation, plasma assisted thermal evaporation, ion plasma plating, cathodic arc plasma deposition, ion beam deposition, plasma assisted ion beam deposition, pulsed laser deposition, chemical vapor deposition, thermal chemical vapor deposition, plasma enhanced chemical vapor deposition, photochemical chemical vapor deposition, molecular beam epitaxy, sol-gel deposition, or spray pyrolysis deposition. It comprises a fracture absorption layer. The third layer has an ionic conductor, an electric insulator, or a mixed conductor. The apparatus includes a fourth electrochemical layer adapted to stunt fractures and having two sides, and a fifth electrochemical layer having a first side. A portion of the first side of the fourth layer is connected to a portion of a second side of the second layer, and a first side portion of the fifth layer is connected to a second side portion of the fourth layer. The substrate layer can be planar, fibrous, ribbon-like, or preferably cylindrical. It comprises a material adapted to be flexible or conformable. The electrochemical device includes an anode layer (150) and electrode layer(s).Preferred Parameter: The first layer is approximately 0.05- approximately 5 (preferably approximately 0.5- approximately 2) microns thick. The third layer is 0.005-5 (preferably 0.05-0.1) microns. The substrate layer is approximately 1 microns- approximately 6.35 mm (preferably approximately 25- approximately 127 microns) thick. The electrode layers have a thickness of approximately 0.05 microns- approximately 10 cm. The cylindrical substrate layer comprises a diameter of approximately 10- approximately 381 microns.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The first layer comprises lithium aluminum tetrafluoride (LiAlF4), Lipon, or a crystalline thin-film electrolyte. The third layer has metallic structural characteristic of material. It comprises elemental lithium (Li), phosphorus (P), or tin (Sn); a single phase compound of LiaPSnbOcNd (A); a multi-phase compound of LiaPSnbOcNd (B); a single phase compound of LiaPMbOcNd (C); a multi-phase compound of LiaPMbOcNd (D); elemental M; a single phase compound of LiaPMbOcNdXe (E); a multi-phase compound of LiaPMbOcNdXe (F); lithium nitride (Li3N); lithium oxide (Li2O); lithium fluoride (LiF); lithium chloride (LiCl); lithium bromide (LiBr); lithium iodide (LiI); beryllium (Be); beryllium lithium-containing compound (Li2Be2O3 or Li4BeO3); beryllium oxide (BeO); lithium boron oxide (LiBO2); boron (B); boron oxide (B2O3); boron nitride (BN); lithium aluminum-containing compound (Li5AlO4, LiAlO2, or LiAl5O8); aluminum (Al); aluminum oxide (Al2O3); aluminum nitride (AlN); lithium carbonate (Li2CO3); lithium silicon-containing compound (Li4SiO4 or Li8SiO6); silicon (Si); silicon dioxide (SiO2); silicon nitride (Si3N4); lithium germanium-containing compound (Li4GeO4); germanium (Ge); germanium oxide (GeO2); germanium nitride (Ge3N4); lithium phosphate (Li3PO4); phosphorus (P); phosphorus-containing compound (P2O5, P5N3PN, PON, or P4ON6); lithium arsenic-containing compound (Li3AsO4); arsenic (As); arsenic containing-compound (As2O3 or As2O5); sulfur (S); lithium sulfate (Li2SO4); lithium chlorine-containing compound (LiClO4); scandium (Sc); lithium scandium-containing compound (LiScO2 Sc2O3); yttrium (Y); yttrium lithium-containing compound (LiYO2 or Y2O3); yttrium nitride (YN); zirconium (Zr); zirconium lithium-containing compound (Li8ZrO6); zirconium-containing compound (ZrO2 or ZrN); cerium (Ce); or Ce-containing compound (LiCeO2 or CeO2). It can be Li-containing compound (LiAlSiO4, Li9SiAlO8, Li3.6Si0.6P0.4O4, Li3Sc(PO4)3, LiTi2(PO4)3, Li0.2BPO4-l, Li3BN2, Li3AlN2, LiSi2N3, Li2SiN2, Li5SiN3, Li18Si3N10, Li21S i3N11, Li8SiN4, LiPN2, Li7PN4, LiAlF4, LiAlCl4, LiPF6, LiBF4, Li3SiS3.5, LixV2Oy (where greater than 0 but equal to 2; y is greater than 0 or equal to 5), LixMn2O4 (where greater than 0 or equal to 2), LixMn2-yO4 (where x is greater than 0 but less than 3, y is greater than 0.2 but less than 0.5), LixMnO2 (where x is greater than 0 but equal or equal 2), LixCoO2 (where greater than 0 or equal to l), LixNiO2 (where x is greater than 0 or equal to 2), LixSn3Ny (where x is greater than 0 but less than 100, y is greater than 0 or equal to 4), LixInNy (where x is greater than 1 but less than 100, y is greater than 0 or equal to 1), LixZn3Ny (where x is greater than 0 but less than 100, y is greater than 0 or equal to 2), LixZnOy (where x is greater than 0 but less than 100, y is greater than 0 or equal to 2), LixCuNy (x is greater than 0 but less than 100, y is greater than 0 or equal to 0.33), LixSnOy (where x is greater than 0 but less than 100, y is greater than 0 or equal to 2); or LixSiSn0.9ON1.9, LixAl, LixIn, LixC6, LixSi, LixSn, LixP or LiZn (where x is greater than 0 but less than 100). The substrate layer comprises metal, silicon, semiconductor, or carbon. The anode layer comprises lithium-metal, lithium-free, or lithium-ion.a, b=greater than 0 but less 100;c=greater than 0 but less than a/2+5/2+2b-3d/2;d=greater than 0 but less than a/3+5/3+4b/3-2c/3;c (for (C) and (D))=greater than 0 but less than a/2+5/2+b(valence of M)/2-3b/2;d (for (C) and (D))=greater than 0 but less than a/3+5/3+b(valence of M)/3-2c/3;M group 2-15 of the periodic table excluding Li, P, and N;c (for (E) and (F))=greater than 0 but less than a/2+5/2+b(valence of M)/2-3b/2-e(valance of X)/2;e=greater than 0 but less than a/(valence of X)+5/(valence of X)+b(valence of M)/(valence of X)-2c/(valence of X)-3d/(valence of X);X=S, Se, Te, F, Cl, Br, or I;d (for (E) and (F))=greater than 0 but less than a/3+5/3+b(valence of M)/3-2c/3-e/3(valence of X).    TECHNOLOGY FOCUS - METALLURGY - Preferred Material: The third layer may comprise alloyed Li, P, Sn, or M. The substrate layer may comprise metal-alloy, or shape memory alloy.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Material: The first layer comprises lithium aluminum tetrafluoride (LiAlF4), Lipon, or a crystalline thin-film electrolyte. The third layer has metallic structural characteristic of material. It comprises elemental lithium (Li), phosphorus (P), or tin (Sn); a single phase compound of LiaPSnbOcNd (A); a multi-phase compound of LiaPSnbOcNd (B); a single phase compound of LiaPMbOcNd (C); a multi-phase compound of LiaPMbOcNd (D); elemental M; a single phase compound of LiaPMbOcNdXe (E); a multi-phase compound of LiaPMbOcNdXe (F); lithium nitride (Li3N); lithium oxide (Li2O); lithium fluoride (LiF); lithium chloride (LiCl); lithium bromide (LiBr); lithium iodide (LiI); beryllium (Be); beryllium lithium-containing compound (Li2Be2O3 or Li4BeO3); beryllium oxide (BeO); lithium boron oxide (LiBO2); boron (B); boron oxide (B2O3); boron nitride (BN); lithium aluminum-containing compound (Li5AlO4, LiAlO2, or LiAl5O8); aluminum (Al); aluminum oxide (Al2O3); aluminum nitride (AlN); lithium carbonate (Li2CO3); lithium silicon-containing compound (Li4SiO4 or Li8SiO6); silicon (Si); silicon dioxide (SiO2); silicon nitride (Si3N4); lithium germanium-containing compound (Li4GeO4); germanium (Ge); germanium oxide (GeO2); germanium nitride (Ge3N4); lithium phosphate (Li3PO4); phosphorus (P); phosphorus-containing compound (P2O5, P5N3PN, PON, or P4ON6); lithium arsenic-containing compound (Li3AsO4); arsenic (As); arsenic containing-compound (As2O3 or As2O5); sulfur (S); lithium sulfate (Li2SO4); lithium chlorine-containing compound (LiClO4); scandium (Sc); lithium scandium-containing compound (LiScO2 Sc2O3); yttrium (Y); yttrium lithium-containing compound (LiYO2 or Y2O3); yttrium nitride (YN); zirconium (Zr); zirconium lithium-containing compound (Li8ZrO6); zirconium-containing compound (ZrO2 or ZrN); cerium (Ce); or Ce-containing compound (LiCeO2 or CeO2). It can be Li-containing compound (LiAlSiO4, Li9SiAlO8, Li3.6Si0.6P0.4O4, Li3Sc(PO4)3, LiTi2(PO4)3, Li0.2BPO4-l, Li3BN2, Li3AlN2, LiSi2N3, Li2SiN2, Li5SiN3, Li18Si3N10, Li21S i3N11, Li8SiN4, LiPN2, Li7PN4, LiAlF4, LiAlCl4, LiPF6, LiBF4, Li3SiS3.5, LixV2Oy (where greater than 0 but equal to 2; y is greater than 0 or equal to 5), LixMn2O4 (where greater than 0 or equal to 2), LixMn2-yO4 (where x is greater than 0 but less than 3, y is greater than 0.2 but less than 0.5), LixMnO2 (where x is greater than 0 but equal or equal 2), LixCoO2 (where greater than 0 or equal to l), LixNiO2 (where x is greater than 0 or equal to 2), LixSn3Ny (where x is greater than 0 but less than 100, y is greater than 0 or equal to 4), LixInNy (where x is greater than 1 but less than 100, y is greater than 0 or equal to 1), LixZn3Ny (where x is greater than 0 but less than 100, y is greater than 0 or equal to 2), LixZnOy (where x is greater than 0 but less than 100, y is greater than 0 or equal to 2), LixCuNy (x is greater than 0 but less than 100, y is greater than 0 or equal to 0.33), LixSnOy (where x is greater than 0 but less than 100, y is greater than 0 or equal to 2); or LixSiSn0.9ON1.9, LixAl, LixIn, LixC6, LixSi, LixSn, LixP or LiZn (where x is greater than 0 but less than 100). The substrate layer comprises metal, silicon, semiconductor, or carbon. The anode layer comprises lithium-metal, lithium-free, or lithium-ion.a, b=greater than 0 but less 100;c=greater than 0 but less than a/2+5/2+2b-3d/2;d=greater than 0 but less than a/3+5/3+4b/3-2c/3;c (for (C) and (D))=greater than 0 but less than a/2+5/2+b(valence of M)/2-3b/2;d (for (C) and (D))=greater than 0 but less than a/3+5/3+b(valence of M)/3-2c/3;M group 2-15 of the periodic table excluding Li, P, and N;c (for (E) and (F))=greater than 0 but less than a/2+5/2+b(valence of M)/2-3b/2-e(valance of X)/2;e=greater than 0 but less than a/(valence of X)+5/(valence of X)+b(valence of M)/(valence of X)-2c/(valence of X)-3d/(valence of X);X=S, Se, Te, F, Cl, Br, or I;d (for (E) and (F))=greater than 0 but less than a/3+5/3+b(valence of M)/3-2c/3-e/3(valence of X).    TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The third layer includes a polymer matrix of polyethylene oxide, polyimide, polytetrafluoroethylene, polyester, or polyvinylpyrrolidone. The substrate layer may comprise polymer.