NOVELTY - Selective deposition to surface comprises exposing a substrate to a precursor in a solvent fluid, and heating the substrate generating a temperature gradient at, on, in, through, or along the surface (94), the surface being at or exceeding the release temperature for the precursor. The deposition material is released from the precursor and selectively deposited to the surface in response to the temperature gradient thus controlling the location of the deposition material at, on, in, and/or along the surface.    USE - For selective deposition to surface for manufacturing semiconductor chip (claimed) used in electronic devices.    ADVANTAGE - The method selectively deposits materials to a surface or substrate thus controlling thickness of the material deposited at, on, in and/or along the surface or substrate.    DETAILED DESCRIPTION - Selective deposition to surface comprises:    (A) providing a substrate comprising the material, the substrate including a deposition surface disposed in an operable thermal relationship with a heating source(s);    (B) providing a solvent;    (C) providing a precursor miscible in and stable at liquid, near-critical, or supercritical conditions for the solvent, the precursor comprising a deposition material releasable at a release temperature or condition for the precursor;    (D) exposing the substrate to the precursor in the solvent fluid; and    (E) heating the substrate generating a temperature gradient at, on, in, through, or along the surface, the surface being at or exceeding the release temperature for the precursor.    The deposition material is released from the precursor and selectively deposited to the surface in response to the temperature gradient thus controlling the location of the deposition material at, on, in, and/or along the surface.    An INDEPENDENT CLAIM is also included for a system for selective deposition, comprising:    (1) a chamber for staging a substrate having a deposition surface;    (2) a delivery system for delivering a solvent and a precursor miscible in the solvent at a liquid, near-critical, or supercritical temperature for the solvent, the precursor comprising a deposition material releasable to the surface at a release temperature for the precursor; and    (3) a heat source(s) for heating the substrate, the surface of the substrate disposed in an operable thermal relationship with the heat source(s) for generating a temperature gradient at, in, on, through, or along the surface.    DESCRIPTION OF DRAWING(S) - The figure illustrates a composite substrate, e.g. a semiconductor chip coupon, illustrating a temperature gradient for effecting deposition of a deposition material (e.g. ruthenium metal) selectively filling substrate pattern features (e.g. vias) in response to the temperature gradient.    Substrate coupon (42)    Vias (90)    Surface (94)    Walls (96a, 96b, 96c)