TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layers: The barrier layer contains metal oxide (in mol%) (80 or less) of formula: MO_Y.M=same as defined above;andY=2.5, 0.5, 1, 1.5 and 2, when M is 1-5, respectively.The barrier layer has inclination structure having value of X greater than transparent conductive layer, and separates from the transparent conductive layer. The hole-transport layer contains p-type semiconductor having work function greater than that of the metal (M).Preferred Process: The barrier layer is produced by vacuum forming method, reactive vapor deposition method or reactive sputtering method. The transparent conductive layer and porous metal-oxide layer are produced by vacuum forming method, reactive vapor deposition method or reactive sputtering method. The lamination is performed by roll toe roll system.Preferred Composition: The amount of metal (M) in the barrier layer is 30 mol% or less.Preferred Properties: The barrier layer has thickness of 10 nm to 1 microns. The base material has flexibility.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Layers: The barrier layer contains metal oxide (in mol%) (80 or less) of formula: MO_Y.M=same as defined above;andY=2.5, 0.5, 1, 1.5 and 2, when M is 1-5, respectively.The barrier layer has inclination structure having value of X greater than transparent conductive layer, and separates from the transparent conductive layer. The hole-transport layer contains p-type semiconductor having work function greater than that of the metal (M).Preferred Process: The barrier layer is produced by vacuum forming method, reactive vapor deposition method or reactive sputtering method. The transparent conductive layer and porous metal-oxide layer are produced by vacuum forming method, reactive vapor deposition method or reactive sputtering method. The lamination is performed by roll toe roll system.Preferred Composition: The amount of metal (M) in the barrier layer is 30 mol% or less.Preferred Properties: The barrier layer has thickness of 10 nm to 1 microns. The base material has flexibility. EXAMPLE - Titanium oxide (TiO) was provided on transparent electroconductive base material by vacuum sputtering method, to form barrier layer with thickness of 50 nm and containing titanium and oxygen at ratio of 1:1. Titania paste containing polyethyleneglycol of titania microparticle water dispersion sol and surface active agent and having molecular weight of 2000 was applied on the barrier layer, to form porous metal-oxide layer. Hole-transport layer and counter electrode were then laminated sequentially on the porous metal-oxide layer, to obtain dye sensitizing solar cell. The dye sensitizing solar cell had photoelectric conversion efficiency of 3.25%, without generation of reverse direction electric current by short circuit, and with reduced oxidation of metal.