NOVELTY - A thick film conductive composition comprises electrically conductive silver powder, zinc-containing additive, and one or more lead-free glass frits, all dispersed in organic medium    USE - The composition is used for forming an article, and electrode of semiconductor device (claimed). It is used as conductive silver paste for use in the front side of solar cell device.    ADVANTAGE - The composition is lead(Pb)-free, and maintains electrical performance and solder adhesion.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) glass frit composition comprising (wt.%): silicon dioxide (SiO2 , 0.1-8), aluminum oxide (Al2O3, 0-4), boron oxide (B2O3, 8-25), calcium oxide (CaO, 0-1), zinc oxide (ZnO, 0-42), sodium oxide (Na2O, 0-4), lithium oxide (Li2O, 0-3.5), bismuth oxide (Bi2O3, 28-85), silver oxide (Ag2O, 0-3), cerium oxide (CeO2, 0-4.5), tin oxide (SnO2, 0-3.5), and bismuth fluoride (BiF3, 0-15);    (2) article formed by depositing the conductive composition on a substrate (10) and processing the composition to remove the organic medium and sinter the glass frit and silver powder;    (3) electrode (501) formed from the conductive composition by firing the composition to remove the organic medium and sinter the glass frit;    (4) manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film (30) formed on a main surface of the semiconductor, comprising applying onto the insulating film the thick film composition; and firing the semiconductor, insulating film and thick film composition to form an electrode; and    (5) semiconductor device formed from the composition by processing the composition to remove the organic medium and sinter the glass frit and silver powder.    DESCRIPTION OF DRAWING(S) - The figure shows a step of the fabrication of a semiconductor device.    Substrate (10)    N-type diffusion layer (20)    Insulating film (30)    Aluminum back electrode (61)    Electrode (501)