TECHNOLOGY FOCUS - ELECTRONICS - Preferred Transistor: The thin film transistor is a field effect transistor comprising sequential lamination of a dielectric layer, a gate electrode, a source electrode and a drain electrode, until the gate electrode and the film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of the organic semiconductor material. The thin film transistor has on/off ratio of source/drain current of at least 104. The gate electrode is adapted for controlling a current between the source and drain electrodes through the thin film of organic semiconductor material, by voltage applied to the gate electrode. Gate dielectric (56) comprises an inorganic or organic electrically insulating material. The thin film transistor further comprises a non-participating support, which is optionally flexible. The source, drain, and gate electrodes comprise a material selected from doped silicon, metal, and conducting polymer. The thin film transistors are provided on non-participating support. The compound is deposited on the substrate by sublimation or solution-phase deposition. The substrate is at 100degreesC or less during deposition. The treatment of interfaces between the electrodes and the thin film of n-channel organic semiconductor material, is not carried out before deposition of the compound.Preferred Process: The thin film transistor is preferably obtained (a) providing substrate, (b) providing gate electrode material over the substrate, (c) providing gate dielectric over the gate electrode material, (d) depositing the thin film of n-channel organic semiconductor material over the gate dielectric, and (e) providing source electrode and drain electrode to the thin film of n-channel organic semiconductor material. The fabrication of transistor is carried out at less than peak temperature of 100degreesC.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Material: The thin film of organic semiconductor material comprises N,N'-di(arylalkyl)-substituted-3,4,9,10 perylene-based tetracarboxylic acid diimide compound shown by formula (1).X=-CH2- divalent group;n=1-3;R1-R10=H or electron donating organic group, preferably electron donating group chosen from H, CH3, linear or branched 2-4C alkyl, alkenyl, alkoxy, and other 1-4C electron donating organic group; andY=alkyl, alkenyl or alkoxy.Preferably, when n is 1 or 2, either all of R1-R6 and R8-R10 are H, and R7 is CH3, or all of R2-R5 and R7-R10 are H, and both R1 and R6 are CH3, or when n is 2, all of R1, R3-R6 and R8-R10 are H, and both R2 and R7 are CH3. The phenyl ring is preferably substituted with a single substituent, which is ortho or meta to the position of the -(CH2)n- group linking the phenyl and imide nitrogen. SPECIFIC COMPOUNDS - N,N'-di(arylalkyl)-substituted perylene-based tetracarboxylic diimide compound is N,N'-bis(2-methyl-phenylethyl)-perylene-3,4,9,10 tetracarboxylic acid diimide, N,N'-bis(3-methyl-phenylethyl)-perylene-3,4,9,10 tetracarboxylic acid diimide, N,N'-bis(2-methyl-phenylmethyl)-perylene-3,4,9,10 tetracarboxylic acid diimide, N,N'-bis(3-methyl-phenylmethyl)-perylene-3,4,9,10 tetracarboxylic acid diimide or N-(2-methyl-phenylethyl)-N'-(phenylethyl)-perylene-3,4,9,10 tetracarboxylic acid diimide (claimed).    EXAMPLE - N,N'-di(arylalkyl)-substituted perylene-based tetracarboxylic diimide compound (I-9) was deposited by vacuum sublimation at 5 x 10-7 Torr and 0.1 Angstrom/seconds to a thickness of 40 nm on a quartz substrate held at 75 degreesC. The sample was exposed to air for short duration before deposition, to obtain organic semiconductor material thin film of n-type thin film transistor. The obtain device had on/off ratio of 4.4 x 104 and threshold voltage of 42.4 V.