NOVELTY - A composite material, including a metal or metal coated substrate and a film, is formed by: heating a liquid melt of selenide, sulfide or mixed selenide-sulfide material to generate a gaseous flow; limiting the flow of the generated gaseous material into a deposition zone of a chamber; and directionally controlling the generated gaseous material so that it is spacially localized in the deposition zone and forms a film on the substrate.    USE - The inventive method is used for forming a composite material including a metal or metal coated substrate and a film from selenide, sulfide or mixed selenide-sulfide films for photovoltaic applications    ADVANTAGE - The inventive method solves the problem of crack formation which commonly occurs when the CIGS is deposited onto the molybdenum coated substrate. It also improves the adhesion of the CIGS film to the molybdenum layer.    DETAILED DESCRIPTION - Formation of a composite material, including a metal or metal coated substrate and a film from selenide, sulfide or mixed selenide-sulfide films, includes: providing the metal or metal coated substrate; introducing the substrate into a chamber utilizing a substrate transport system, where the chamber includes a deposition zone isolated from other portions of the chamber; passing the substrate through the deposition zone; heating a liquid melt of selenide, sulfide or mixed selenide-sulfide material to be deposited to generate a gaseous flow; limiting the flow of the generated gaseous material into the deposition zone; and directionally controlling the generated gaseous material so that it is spacially localized in the deposition zone and forms a film on the substrate.    An INDEPENDENT CLAIM is also included for a process of forming a copper, indium-gallium diselenide (CIGS) film on a molybdenum coated substrate in a manner that the reaction of molybdenum with selenium is inhibited, comprising: providing the molybdenum coated substrate and the substrate transport system in the chamber containing an isolated deposition zone, where the molybdenum coating contains an adequate amount of oxygen to inhibit the reactivity of the molybdenum film with selenium; heating a selenium liquid melt to generate a gaseous flow of selenium; limiting the flow of the selenium into the deposition zone; and directionally controlling the application of selenium onto the substrate so that the selenium is spacially localized in the deposition zone while simultaneously depositing copper, indium, and gallium within the deposition zone on the molybdenum coated substrate.