TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Particle: The silicon particle is crystalline silicon particle. Preferred Property: The dangling bond density of silicon particle is less than 1x1017 piece/cm3.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Particle: The silicon particle is crystalline silicon particle. Preferred Property: The dangling bond density of silicon particle is less than 1x1017 piece/cm3.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The high power silane compound is obtained by irradiating silane compound (A) with radiation having wavelength of 150-450 nm. The compound (A) is chain-shaped silane compound of formula: SiiX2i+2, cyclic silane compound of formula: SijX2j, and/or cage-like silane compound of formula: SikXk.X=H or halogen atom;i=2-10;j=3-10;andk=6,8 or 10. EXAMPLE - Tetrahydrofuran (1 l) and lithium metal (in g) (18.3) were added to a flask under argon atmosphere, and bubbling was carried out. Diphenyl dichlorosilane (333) was added, and liquid mixture was stirred at 0degreesC. The reaction mixture was poured into ice water (1 l), and deposit was separated by filtration. The filtrate was washed with water and cyclohexane, and solid (140) was obtained. The obtained solid (100) and cyclohexane (1000 ml) were added to flask, and aluminum chloride (4) was added. Argon was substituted, and lithium hydride aluminum (40) and diethylether (400 ml) were added. The mixture was stirred at room temperature, and byproduct was removed. A colorless and transparent liquid was obtained after vacuum distillation. The liquid was irradiated, and toluene (40) was added to obtain toluene solution of high power silane compound. The obtained toluene solution of silane compound (2.4 ml) and silicon particle (0.6) having dangling-bond density of 1x1016 piece/cm3 were mixed under nitrogen atmosphere to obtain a composition. The composition was applied on a silicon wafer at pressure of 760 mmHg under nitrogen atmosphere. The coating film was heated at 400degreesC under pressure of 380 mmHg, and silicon film having thickness of 4.6 microns was formed. A solar cell was produced using the obtained silicon film. The solar cell had open circuit voltage of 0.48 V, short circuit current of 17.5 mA, curve factor of 0.45 and photovoltaic cell conversion efficiency of 3.8%.