NOVELTY - Optoelectronic device comprises a first semiconductor layer over a first electrode, a second semiconductor layer over the first semiconductor layer, a semiconductor-enriched insulator layer over the second semiconductor layer, and a second electrode over the semiconductor-enriched insulator layer and having window(s).    USE - The device is used solar cell (claimed) for converting electromagnetic radiation into electrical energy, and for batteries or petroleum. It is used for detecting electromagnetic radiation useful in cameras or other imaging equipment.    ADVANTAGE - The inventive device is made of low-temperature processing and provides higher efficiency and cost reduction relative to high-temperature processes. It has semiconductor-enriched insulator that enable to control of various physical properties of the insulator composition. It has superior interface control, thermal stability, and device reproducibility.    DETAILED DESCRIPTION - Optoelectronic device (10) comprises a first layer of semiconductor material over a first electrode (14), and is of heavily-doped semiconductor material. A second layer of semiconductor material is over the first semiconductor layer. It comprises any dopant, and has a lower concentration of dopant than the first semiconductor layer. A semiconductor-enriched insulator layer (28) is provided over the second semiconductor layer. A second electrode (30) is provided over a first portion of the semiconductor-enriched insulator layer. It has window(s) (32) extending to a second portion of the semiconductor-enriched insulator layer. INDEPENDENT CLAIMS are also included for:    (1) solar cell comprising the first electrode, the first semiconductor layer lightly doped with a first dopant type, the second semiconductor layer lightly doped with the first dopant type, the semiconductor-enriched insulator layer, the second electrode extending over first segment(s) of the semiconductor-enriched insulator layer, and window(s) over second segment(s) of the semiconductor-enriched insulator layer and permitting wavelength(s) of electromagnetic radiation to reach the second segments of the semiconductor-enriched insulator layer(s);    (2) method of forming the above optoelectronic device; and    (3) method of forming the solar cell.    DESCRIPTION OF DRAWING(S) - The figure is a diagrammatic, fragmentary, cross-sectional view of an optoelectronic device.    Optoelectronic device (10)    Base (12)    First electrode (14)    Semiconductor-enriched insulator layer (28)    Second electrode (30)    Windows (32)