NOVELTY - An electronic article has, in a thin film transistor, a thin film of organic semiconductor material in which the thin film transistor is a field effect transistor comprising multi-layer dielectric (35) having first dielectric layer with a thickness of 100-500 nm, in contact with a gate electrode, and second dielectric layer with a thickness of 5-50 nm in contact with an organic semiconductor material. The first dielectric layer comprises a continuous first polymeric material and the second dielectric layer comprises a continuous second nonfluorinated polymeric material.    USE - Used in electronic device consisting of integrated circuits, active-matrix display, and solar cells (claimed), and as switching element in electronics, e.g. in active-matrix liquid crystal displays and smart cards.    ADVANTAGE - The invention provides new and improved organic dielectrics having low surface roughness, high breakdown voltage, solution processability, and low leakage current. The dielectrics are capable of improving operating mobilities and current on/off ratios of semiconductor materials in organic thin film devices.    DETAILED DESCRIPTION - The electronic article comprises, in the thin film transistor, the thin film of organic semiconductor material in which the thin film transistor is a field effect transistor comprising multi-layer dielectric, gate electrode (20), source electrode (50), and drain electrode (60). The multi-layer dielectric, gate electrode, thin film of organic semiconductor material, source electrode, and drain electrode are in any sequence as long as the gate electrode and the film of organic semiconductor material contact the multi-layer dielectric, and the source electrode and the drain electrode contact the thin film of the organic semiconductor material. The multilayer dielectric comprises first dielectric layer having thickness of 100-500 nm, in contact with the gate electrode and second dielectric layer having thickness of 5-50 nm in contact with the organic semiconductor material. The first dielectric layer comprises continuous first polymeric material having a relatively higher dielectric constant less than 10 and the second dielectric layer comprises continuous second nonfluorinated polymeric material having a relatively lower dielectric constant of greater than 2.3. The difference in the dielectric constants is greater than or equal to0.2.    INDEPENDENT CLAIMS are also included for the following:    (1) an electronic device consisting of integrated circuits, active-matrix display, and solar cells comprising the thin film transistors;    (2) a process for fabricating thin film semiconductor device, comprising (a) forming a gate electrode spaced apart from a semiconductor material; (b) forming first layer of first polymeric dielectric material in contact with the gate electrode; (c) forming second layer of second non-fluorinated polymeric dielectric material over the first layer of a dielectric not in contact with the gate electrode; (d) depositing, onto a substrate, a thin film of organic semiconductor material; and (e) forming a spaced apart source electrode and drain electrode, in which the source and drain electrodes are separated by, and electrically connected with, the semiconductor film; and    (3) an integrated circuit comprising the thin film transistors.    DESCRIPTION OF DRAWING(S) - The figure is a cross-sectional view of an organic thin film transistor having bottom contact configuration.    Substrate (10)    gate electrode (20)    Gate dielectric (35)    Source electrode (50)    Drain electrode (60)    Semiconductor (70)