TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The plasma enhanced chemical vapor deposition is carried out under a pressure of 0.5 - 2 torr at a radio frequency power of 100 - 800 W. The dielectric film is deposited to a thickness of at least 3 microns. The method further involves heating, UV irradiation, electron beam-irradiation or plasma treatment of the dielectric film.Preferred Components: The dual organic siloxane precursor is of formula (I). The film property modifier is O2, CH4 or Xe. The dual organic siloxane precursor is present in an amount of 10 - 100%, based on the total amount of the dual organic siloxane precursor and the film property modifier.R1 = H, 1-3C alkyl or 6-15C aryl;R2 = SiX1X2X3;X1 - X3 = H, 1-3C alkyl, 1-10C alkoxy or halo; andp = 3 - 8. SPECIFIC COMPOUNDS - 4 Compounds are specifically claimed as (I) e.g. dual organic siloxane precursor of formula (II).    EXAMPLE - A mixture of the dual organic siloxane precursor of formula (II) (TS-T4D4) and O2 were deposited on p-type Si wafers with a radio-frequency (RF) power of 13.56 MHz by plasma enhanced chemical vapor deposition (PECVD). No heating was applied to the wafers while maintaining an earth potential. The wafers were completely cleaned before being mounted on a reaction chamber. Plasma was generated by a three-turn coil arranged around a quartz tube. An initial pressure before deposition was set to 106 torr. All gas lines were heated so that TS-T4D4 in a vaporized state was not re-condensed and a bubbler temperature was maintained at 90degreesC. The flow ratio of the TS-T4D4 to the O2 was adjusted to 100:0 (The total flow rate was 100 sccm). The deposition pressure was adjusted to 570 mTorr. Under these conditions, deposition was carried out with a fixed RF power of 700 W for 5 minutes without heating the wafers to prepare a dielectric film (test). For comparison of thermal stability, the dielectric film was subjected to annealing under 106 torr at 400degreesC for 30 minutes. A comparative dielectric film was prepared in the same manner as above, except that methyltrimethoxysilane (MTMS) was used instead of TS-T4D4, the flow ratio (MTMS:O2) was adjusted to 100:0 (the total flow rate was 100 sccm), the deposition pressure was adjusted to 102 mTorr, and deposition was carried out with a fixed RF power of 300 W without heating the wafers. The performances of the test and comparative dielectric films were measured by measuring thickness, refractive index, dielectric constant, elastic modulus and hardness. The thickness (Angstrom), refractive index, dielectric constant (k), elastic modulus and hardness for test/comparative dielectric films before annealing was found to be 3625/4000, 1.619/1.5, 2.94/2.55, 48.88/13.98 and 4.46/1.98 respectively and after annealing was found to be 2604/4000, 1.62/1.47, 2.9/2.5, 47.95/9.48 and 4.3/0.63 respectively.