NOVELTY - Configuring a Schottky diode with dielectric isolation involves disposing dielectric layer, on semiconductor surface, having at least one aperture; depositing metal layer over the dielectric layer, where the aperture connects a portion of the metal layer to a portion of the semiconductor layer to form a Schottky diode active area; and welding an interconnect to the metal layer.    USE - Used for configuring a Schottky diode with dielectric isolation useful in solar cell/bypass diode structure (claimed).    ADVANTAGE - The Schottky diode has reduced reverse leakage current.    DETAILED DESCRIPTION - Configuring a Schottky diode (200) with dielectric isolation (204), involves:    (A) disposing a layer of dielectric material on a semiconductor surface, the disposed dielectric material layer having at least one aperture (205);    (B) depositing a metal layer (202) over the dielectric material layer, where the aperture connects a portion of the metal layer to a portion of the semiconductor layer to thus form a Schottky diode active area; and    (C) welding an interconnect (208) to the metal layer such that the interconnect overlaps a portion of the metal layer outside the active area and such that the dielectric material outside the active area provides protection against welding-related diffusion in the semiconductor layer.    INDEPENDENT CLAIMS are also included for:    (A) Schottky diode comprising semiconductor layer; metal layer; dielectric material interposed between the metal layer and the semiconductor layer; aperture in the dielectric material that connects the semiconductor layer and the metal layer through the dielectric material, where the aperture defines an active area between the metal layer and the semiconductor layer; and interconnect having a weld area overlapping, and welded to, a first portion of the metal layer, where the weld area overlaps the dielectric material outside the active area to provide protection against welding-related diffusion in the semiconductor layer; and    (B) solar cell/bypass diode structure, comprising a solar cell disposed on a first portion of a semiconductor substrate; semiconductor layer disposed on a second portion of the semiconductor substrate; dielectric material layer having at least one aperture disposed on the semiconductor layer; metal layer disposed on the dielectric material layer, where the aperture connects a portion of the metal layer to a portion of the semiconductor layer to thus form a Schottky diode active area, and where the Schottky diode active area is configured as a bypass diode in parallel reverse polarity with the solar cell; and interconnect having a weld area overlapping, and welded to, a first portion of the metal layer, the weld area overlapping the dielectric material outside the active area to provide protection against welding-related diffusion in the semiconductor layer.    DESCRIPTION OF DRAWING(S) - The figure is a Schottky diode configuration with dielectric isolation.    Schottky diode (200)    Metal layer (202)    Dielectric isolation (204)    Aperture (205)    Interconnect (208)