TECHNOLOGY FOCUS - ELECTRONICS - Preferred Properties: A ratio of the dielectric constant of the higher to lower dielectric material is 5:1-1.1:1. The second dielectric layer has a thickness of 5-40 nm and the difference in the dielectric constants is greater than or equal to0.8. The ratio of the dielectric constant of the higher to lower dielectric material is 3:1-1.1:1. Preferred Components: The gate electrode is adapted for controlling, by voltage applied to the gate electrode, a current between the source and drain electrodes through the organic semiconductor material. The thin film transistor further comprises a non-participating support that is optionally flexible. Preferred Materials: The source, drain, and gate electrodes each comprises a material consisting of doped silicon, metal, or conducting polymer. Preferred Methods: The first and the second dielectric materials are deposited over the substrate by solution-phase deposition and the substrate is at less than or equal to200degrees. The method comprises providing a support; providing a gate electrode material over the substrate; providing first layer of a first polymeric dielectric material in contact with the gate electrode and second layer of second non-fluorinated polymeric dielectric material over the first layer of a dielectric not in contact with the gate electrode; depositing the thin film of organic semiconductor material over the gate dielectric; and providing source and drain electrodes contiguous to the thin film of organic semiconductor material.    TECHNOLOGY FOCUS - POLYMERS - Preferred Materials: The organic semiconductor material is made of a P-type semiconductor material containing a fused polycyclic aromatic hydrocarbon having greater than or equal to3 fused benzene rings. It is made of pentacene or its derivative. Preferred Properties: The first polymeric material has dielectric constant of 3-10 and the second non-fluorinated polymeric material has dielectric constant of less than or equal to3. Preferred Compounds: The first polymeric material is consisting of poly(4-vinylphenol), polyimide, or poly(vinylidene fluoride), preferably poly(4-vinylphenol). The second non-fluorinated polymeric material is consisting of polystyrene or its derivatives, poly(vinyl naphthalene) and derivatives, or poly(methyl methacrylate), preferably poly(vinyl naphthalene) and derivatives. It is consisting of poly(vinyl naphthalene) and the first polymeric material is a polymer with a dielectric constant of 3-10.