NOVELTY - An oxide semiconductor electrode comprises base material (21); bonding layer (22) formed on the base material and made of a thermoplastic resin, which includes a silane-modified resin; first electrode layer (23) formed on the bonding layer and made of a metal oxide; and porous layer (24) formed on the first electrode layer and containing a fine particle of a metal oxide semiconductor.    USE - For dye-sensitized solar cell (claimed).    ADVANTAGE - The oxide semiconductor electrode has a bonding layer excellent in the temporal stability of the adhesive force and excellent in the productivity by a transfer method. It is excellent in energy conversion efficiency and can be produced at high productivity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a dye-sensitized solar cell, comprising porous layer of the oxide semiconductor electrode, in which a dye sensitizer is absorbed on a surface of the fine particle of a metal oxide semiconductor contained in the porous layer, and a second electrode layer of a counter electrode base material constituted of the second electrode layer and a counter base material, are disposed to face each other through an electrolyte layer containing a redox couple;    (2) a method of producing an oxide semiconductor electrode with a heat-resistant substrate, comprising forming an intermediate layer-forming pattern, where an intermediate layer-forming coating material containing an organic material and a fine particle of a metal oxide semiconductor is applied to a heat-resistant substrate in a pattern and set to form an intermediate layer-forming pattern; forming an oxide semiconductor layer-forming layer, where an oxide semiconductor layer-forming coating material, a solid of which has a higher concentration of a fine particle of a metal oxide semiconductor than that of a fine particle of a metal oxide semiconductor in a solid of the intermediate layer-forming coating material, is applied to the heat-resistant substrate and the intermediate layer-forming pattern, and set to form an oxide semiconductor layer-forming layer; sintering the intermediate layer-forming pattern and the oxide semiconductor layer-forming layer to be a porous body respectively to form a porous intermediate layer and a porous oxide semiconductor layer, where the processes are carried out to form an oxide semiconductor substrate, and to superpose the oxide semiconductor layer and the first electrode layer by using the oxide semiconductor substrate and an electrode base material provided with a base material and a first electrode layer; and    (3) a method of producing a dye-sensitized solar cell, comprising forming a counter electrode base material by facing, with an oxide semiconductor electrode and a counter electrode base material provided with a second electrode pattern and a counter base material, the intermediate layer and the second electrode pattern to form a base material pair for a dye-sensitized solar cell, where a filling process, in which supporting a dye sensitizer on a pore surface of the intermediate layer and the oxide semiconductor layer, and forming an electrolyte layer between the second electrode pattern and the intermediate layer and inside of a pore of the porous body of the oxide semiconductor layer and the intermediate layer after supporting a dye sensitizer are carried out to the laminated body for an oxide semiconductor electrode, oxide semiconductor electrode with a heat-resistant substrate, oxide semiconductor electrode or base material pair of a dye-sensitized solar cell.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-section of an oxide semiconductor electrode.    Base material (21)    Bonding layer (22)    Electrode layer (23)    Porous layer (24)