TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Substrate: The cathode substrate is preferably a substrate with metal or a transparent substrate.Preferred Metal: The metal of cathode substrate is nickel and/or platinum.Preferred Property: The work function of metal in cathode substrate is 4-7 eV, preferably 4.5-6 eV.Preferred Layer: The dye sensitizing p-type semiconductor layer contains nickel oxide, nickel oxide-lithium, nickel oxide-calcium, nickel oxide-lithium-calcium, copper oxide (CuO, Cu2O), CuO-lithium, CuO-calcium, CuO-lithium-calcium, Cu2O-lithium, Cu2O-calcium, Cu2O-lithium-calcium, cobalt oxide (CoO, Co3O4), CoO-lithium, CoO-calcium, CoO-lithium-calcium, Co3O4-lithium, Co3O4-lithium-calcium, iron oxide (FeO, Fe2O3), FeO-lithium, FeO-calcium, FeO-lithium-calcium, Fe2O3-lithium, Fe2O3-lithium-calcium, copper iodide, copper thiocyanate, copper aluminum oxide (CuAlO2, CuAl2O2), copper-indium-selenide, copper-indium-sulfide, copper-gallium oxide, zinc-rhodium oxide, strontium-copper oxide, zinc oxide-indium-nitrogen, zinc oxide-berylium-nitrogen, gallium phosphide, gallium arsenide, chromium oxide, tin sulfide, bismuth oxide, molybdenum oxide, silicon and/or germanium. The dye sensitizing p-type semiconductor layer has oxide semiconductor layer with introduced impurity such as lithium and/or calcium, and a pigment (222,422) held on oxide semiconductor layer, on a composite type semiconductor layer having p-type semiconductor layer (421) laminated on n-type semiconductor layer (221), and pigment held on p-type semiconductor layer. A portion of p-type semiconductor layer and/or n-type semiconductor layer comprises a fiber structure consists of microparticles. The n-type semiconductor layer of composite semiconductor layer contains indium tin oxide microparticles or fluorine tin oxide microparticles. The dye sensitizing p-type semiconductor layer has microparticle structure with diameter of 1-1000 nm, preferably 5-500 nm, which is scattered in light passing through the dye sensitizing n-type semiconductor layer and electrolyte layer. The dye sensitizing p-type semiconductor layer is formed by migration electrode deposition method using a slurry containing p-type semiconductor microparticles. Preferred Support: The support of dye sensitizing p-type semiconductor layer is carbon nanofiber.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Pigment: The pigment of n-side has short wavelength compared with pigment of p-side of composite-type semiconductor layer. The pigment of p-side contains -NCS, -COOH, -COO-, -SH, -S-, -SO3-, -SO3H.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: A nonionic surfactant is added to liquid precursor of n-type inorganic semiconductor and/or p-type inorganic semiconductor containing block copolymer chosen from F127, P123, L122, L121, F108, P105, P104, P103, L101, F98, L92, F88, F87, P85, P84, L81, F77, P75, L72, F68, P65, L64, L63, L62, L61, L44, L43, L42, F38, L35 and L31, and fiber structure is produced by sol gel process. A fluorine is doped by the carbon nanofiber.