;  US8481370-B2 -- EP1447845-A2   MATSUSHITA ELECTRIC IND CO LTD (MATU)   HIGASHITANI H;  JP02087558-A   ;  JP04107955-A   ;  JP07066313-A   ;  JP08186267-A   ;  JP08201540-A   ;  JP10022329-A   MITSUI HIGH TEC KK (MIHI)   MATSUBARA T;  JP10303464-A   CITIZEN DENSHI KK (CITL)   SHIMOZAWA A;  JP63122133-A   MATSUSHITA ELEC IND CO LTD (MATU)   BESSHO Y,  HORIO Y;  JP2000216199-A   RICOH KK (RICO)   SAKATSU T;  JP2000323472-A   CANON KK (CANO)   OKAMURA M;  JP2001358437-A   SEIKO EPSON CORP (SHIH)   KONDO M;  JP2002313979-A   SONY CORP (SONY)   KAMEI S,  KOYAMA H;  JP2003045236-A   NEC KAGOSHIMA LTD (NIDE)   KARIYA K;  JP2003060744-A   SANYO ELECTRIC CO LTD (SAOL);  SANYO TELECOM KK (SANY-Non-standard)   FUKUI T;  JP2003116066-A   WATAYA Y (WATA-Individual)   WATAYA Y;  JP2004266271-A   MATSUSHITA ELECTRIC IND CO LTD (MATU)   HIGASHITANI H;  JP2900229-B2   ;  JP3329512-B2   ;  US4423435-A   TEXAS INSTR INC (TEXI)   TEST H R;  US5138145-A   MATSUSHITA ELEC IND CO LTD (MATU)   NAKAMURA T,  MURATA T,  FUJIWARA S;  US5272376-A   CLARION CO LTD (CLAQ)   UENO H;  US5501989-A   SEMICONDUCTOR ENERGY LAB (SEME)   TAKAYAMA T,  TAKEMURA Y;  US5589694-A   SEMICONDUCTOR ENERGY LAB (SEME)   TAKAYAMA T,  TAKEMURA Y;  US5672545-A   SANTA BARBARA RES CENTER (SANT-Non-standard)   TRAUTT T A,  WOLVERTON T E;  US5744822-A   SEMICONDUCTOR ENERGY LAB (SEME)   TAKAYAMA T,  TAKEMURA Y;  US5783465-A   LUCENT TECHNOLOGIES INC (LUCE)   SHERIDAN M,  HOPPES C K,  FINLEY D W,  CANNING E J;  US5783865-A   FUJITSU LTD (FUIT)   AZUMAGUCHI Y,  INAGAKI M,  TOTANI M,  TEJIMA Y,  IIMURA H;  US5965064-A   SONY CHEM CORP (SONY)   YAMADA Y,  SAITO M,  SHINOZAKI J,  TAKECHI M;  US6133583-A   SEMICONDUCTOR ENERGY LAB (SEME)   OTANI H,  MIYANAGA S,  YAMAZAKI S,  TAKEMURA Y;  US20020019069-A1   ;  US20020145139-A1   ;  US20040147051-A1   ;  US20040156177-A1   ;  US20040183076-A1   ;  US20040183077-A1   ;  US20050095746-A1   ;  US20070158774-A1   ;  US6242758-B1   SEMICONDUCTOR ENERGY LAB (SEME)   YAMAZAKI S,  ARAI Y,  TERAMOTO S;  US6262513-B1   TOSHIBA KK (TOKE)   FURUKAWA O,  CHIYOMA H,  YABUKAWA K,  DONUMA K;  US6297493-B1   CANON KK (CANO)   KOBAYASHI I,  KAIFU N,  TAKEDA S,  TASHIRO K,  ENDO T,  KAMESHIMA T;  US6429053-B1   SEMICONDUCTOR ENERGY LAB (SEME)   YAMAZAKI S,  ARAI Y,  TERAMOTO S;  US6461890-B1   ROHM CO LTD (ROHL)   SHIBATA K;  US6555917-B1   AMKOR TECHNOLOGY INC (AMKR)   HEO Y W;  US6624921-B1   AMKOR TECHNOLOGY INC (AMKR)   GLENN T P,  WEBSTER S,  HOLLAWAY R D;  US6700133-B1   SEMICONDUCTOR ENERGY LAB (SEME)   OTANI H,  MIYANAGA S,  YAMAZAKI S,  TAKEMURA Y;  US6791195-B2   NEC CORP (NIDE)   URUSHIMA M;  US6846703-B2   SEIKO EPSON CORP (SHIH)   SHIMODA T,  INOUE S;  US7045870-B2   WATAYA Y (WATA-Individual)   WATAYA Y;  US7071488-B2   SEIKO EPSON CORP (SHIH)   KIMURA M;  US7091599-B2   OLYMPUS CORP (OLYU)   FUJIMORI N;  US7187051-B2   SONY CORP (SONY)   WATAYA Y;  US7462519-B2   SEMICONDUCTOR ENERGY LAB (SEME)   YAMAZAKI S,  ARAI Y,  TERAMOTO S;  US7468526-B2   SEMICONDUCTOR ENERGY LAB (SEME)   YAMAZAKI S,  ARAI Y,  TERAMOTO S;  US7504660-B2   SEMICONDUCTOR ENERGY LAB (SEME)   YAMAZAKI S,  ARAI Y,  TERAMOTO S;  US7531375-B2   SONY CORP (SONY)   WATAYA Y