NOVELTY - The thermoelectric conversion module comprises a first insulated substrate, columnar p-type and n-type semiconductor thermoelectric transducers (3, 4) alternately arranged on the first insulated substrate, a second insulated substrate arranged to face the first insulated substrate with interposition of the semiconductor thermoelectric transducers, first electrodes arranged between the first insulated substrate and the respective semiconductor thermoelectric transducers, and second electrodes.    USE - The invention deals with the thermoelectric conversion module.    ADVANTAGE - The thermoelectric conversion module has a long term reliability, which can be readily produced by precisely arranging the p-type and n-type semiconductor thermoelectric transducers at high density.    DETAILED DESCRIPTION - The thermoelectric conversion module comprises a first insulated substrate, columnar p-type and n-type semiconductor thermoelectric transducers (3,4) alternately arranged on the first insulated substrate, a second insulated substrate arranged to face the first insulated substrate with interposition of the semiconductor thermoelectric transducers, first electrodes arranged between the first insulated substrate and the respective semiconductor thermoelectric transducers, second electrodes arranged between the second insulated substrate and the respective semiconductor thermoelectric transducers, and a glass film. The first and second electrodes are electrically connected with the p-type and n-type semiconductor thermoelectric transducers in series. The glass film covers an exposed surface of each first electrode at the first insulated substrate side and a part of the exposed surfaces of the p-type and n-type semiconductor thermoelectric transducers, which are directed from the first electrode to the second electrode. The p-type and n-type semiconductor thermoelectric transducers are made of a filled skutterudite base material, a half-heusler base material and an iron-silicide base material. The glass is a lead-free glass and a lead-free borosilicate zinc glass. The glass film has a difference of a thermal expansion coefficient of within plus minus5% from the thermal expansion coefficient of the semiconductor thermoelectric conversion member. The part of the exposed surface of the semiconductor thermoelectric transducer coated with the glass film is 80% or less of a length of the columnar semiconductor thermoelectric transducers. An electric energy is generated by placing the first insulated substrate at a high temperature side when the exposed surface of the first electrode on the first insulated substrate is coated with the glass film. An INDEPENDENT CLAIM is included for a method for manufacturing a thermoelectric conversion module.    DESCRIPTION OF DRAWING(S) - The diagram shows the thermoelectric conversion module:    First and second insulated substrate; (1,2)    P-type and n-type semiconductor thermoelectric transducers. (3, 4)