NOVELTY - An integrated sensor device (1) comprises metal oxide semiconductor (MOS) circuits in a semiconductor substrate, and interconnect levels, each with interconnect conductors having sensor electrodes and insulating dielectric including low-k dielectric material as a sensor dielectric material for absorption of gas or humidity to be sensed. The levels are over the substrate and interconnecting the MOS circuits. The MOS circuits include a processor for processing signals from the sensor electrodes to provide a gas or humidity output. The sensor dielectric comprises organic polymer.    USE - As an integrated sensor device, as audio sensor and as a gas sensing device for sensing gases such as hydrogen, sulfur dioxide, hydrogen sulfide, nitrogen dioxide and isobutane; useful in e.g. radio frequency identification tag and probes.    ADVANTAGE - The dielectric allows sufficient ingress of gas or moisture and a good response characteristic. The sensor dielectric material is of type, which thermosets with sufficient free space volumes for gas or humidity sensing when cured. The materials are effective for low-temperature in metal oxide semiconductor process and are excellent as sensor dielectrics. The sensor dielectric material is hydrophobic and this allows fast egress of small quantity of gas or humidity which ingresses. The dielectric material offers good resistance to chemicals and solvents and therefore there has been a perception in the industry that they act as a barrier and protection against moisture or other fluids. The low-k material is deposited by chemical vapor deposition, ink jet/drop-on-demand, or print-on methods thus eliminating extra etching steps. Having 8-bit microcontroller and 64 KB flash memory on the device as sensors enables significant improvement in accuracy and functionality. The integrated chip is manufactured in a single process in which both the electronics and sensor components are manufactured using standard complementary MOS processing techniques, applied to achieve both electronic and sensing components in an integrated process.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for production of sensor device involving fabricating the metal oxide semiconductor (MOS) circuits in substrate, fabricating interconnect levels, sensor electrodes and dielectric in final interconnect level in integrated process.    DESCRIPTION OF DRAWING(S) - The figure shows a block diagram of the integrated sensor device.    integrated sensor device (1)    microcontroller (2)    transmit/receive interface (3)    wireless antenna (4)    humidity sensor (11)    temperature sensor (13)