TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The dopant comprises 0.001-10 wt.% expressed with respect to the total amount of zinc oxide and indium oxide in (A). The dopant comprises at least one of tin, titanium, vanadium, molybdenum, tungsten, cerium, aluminum, gallium, arsenic, yttrium, fluorine, boron or nitrogen. The dopant is Al(acac)3, Al(O2CC6H2-2-OH-3,5-CHMe2)3, aluminum nitrate, aluminum chloride, Ga(acac)3, Ga(O2CC6H2-2-OH-3,5-CHMe2)3, gallium nitrate or gallium chloride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The zinc carboxylate species is Zn(O2C-C6H4-p-CMe3)2, Zn(O2C-C6H2-2-OH-3,5-CMe3)2, Zn(O2C-C6H4-2-OH)2, Zn(O2C-C6H4-p-OCH3)2, Zn(O2C-C6H4-p-OCH2CH3)2, Zn(O2C-C6H2-2-OH-3,5-CHMe2)2, Zn(O2C-C6H2-4-OH-3,5-CMe3)2, Zn(O2C-C6H3-2-OH-3-CHMe2)2, Zn(O2C-C6H3-3,5-CMe3)2, Zn(O2C-C6H3-2,4-OH)2, Zn(O2C-C6H2-3,4,5-OEt)2, Zn(O2C-C6H2-2-OH-3,5-CMe3)2, Zn(O2C-C6H2-2-OH-3,5-CHMe2)2 or Zn(O2C-C6H2-4-OH-3,5-CMe3)2.The indium carboxylate species is In(O2C-C6H4-p-CMe3)3, In(O2C-C6H2-2-OH-3,5-CMe3)3, In(O2C-C6H4-2-OH)3, In(O2C-C6H4-p-OCH3)3, In(O2C-C6H4-p-OCH2CH3)3, In(O2C-C6H2-2-OH-3,5-CHMe2)3, In(O2C-C6H2-4-OH-3,5-CMe3)3, In(O2C-C6H3-2-OH-3-CHMe2)3, In(O2C-C6H3-3,5-CMe3)3, In(O2C-C6H3-2,4-OH)3, In(O2C-C6H2-3,4,5-OEt)3, In(O2C-C6H2-2-OH-3,5-CMe3)3, In(O2CC6H2-2-OH-3,5-CHMe2)3 or In(O2C-C6H2-4-OH-3,5-CMe3)3.The zinc carboxylate species comprises 0.1-30 wt.% of the composition, when expressed as an equivalent amount of zinc oxide. The indium carboxylate species comprises 0.1-30 wt.% of the composition, when expressed as an equivalent amount of indium oxide. The ratio of the zinc carboxylate species to the indium carboxylate species is 1:1-20:1 when expressed as equivalent amounts of zinc oxide to indium oxide. The liquid carrier is a solvent. The solvent comprises at least one of a glycol ether, acetone, an alcohol, xylene or cyclohexanone. (A) is an emulsion, and comprises a dopant or a polymer species. The additives are surfactants, rheology modifiers, adhesion strengthening additives, drying accelerators or pigments.Preferred Process: The step of heat-treating the substrate includes heat-treating the substrate in a nitrogen/hydrogen atmosphere. (A) is applied to the substrate by spin coating, dip coating, spraying, aerosol, pyrosol, misting, brushing, screen-printing or ink-jet printing. The substrate is substantially transparent, preferably glass. The substrate is heat treated at 200-600degreesC. The coating is substantially transparent and conducting.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer species (0.01-60 wt.% of (A)) comprises a poly(meth)acrylate, preferably poly(ethyl acrylate-co-ethyl methacrylate-co-methylmethacrylate), poly(isobutyl methacrylate), poly(methyl methacrylate), poly(isobornyl methacrylate), poly(butyl methacrylate-co-methyl methacrylate), poly(tert-butyl acrylate co-ethyl acrylate-co-methacrylic acid), poly(ethylene-co-vinyl acetate), poly(propylene carbonate) or poly (vinyl butyral). Preferred Definitions:    Ar,Ar1,Ar2 = aryl compounds of formula (II); and    R1-R5 = H, OH, 1-10C alkyl, 1-10C hydroxyalkyl, 1-10C alkoxy, amino, 1-10C (di)alkylamino, 3-12C cycloalkyl, 4-20C bicycloalkyl, 5-20C polycycloalkyl, 1-10C haloalkyl, 1-10C perhaloalkyl, phenyl, alkylsulfonyl, aryl, heteroaryl, tosyl, arylsulfonyl, acyl, 1-10C alkylcarbonyl, benzoyl, optionally substituted aroyl, butoxycarbonyl, 1-10C alkoxy, 1-10C alkylthio, O-acetyl, O-benzyl, O-substituted benzyl, O-tetrahydropyranyl, O-1-10C alkylacetyl, O-benzoyl, O-aroyl, S-acetyl, S-benzyl, S-substituted benzyl, S-1-10C alkylacetyl, S-benzoyl, S-aroyl, hydroxyl, halo, 1-10C (1-5C alkoxy) alkyl, formyl, acetyl, nitrile, carboxyl, 1-10C alkoxycarbonyl, nitro or amido, where neighboring R groups form part of a further aromatic ring, optionally including one or more hetero atoms of N, S or O and optionally substituted, preferably at least one aryl group is a condensed polycyclic aromatic group, optionally naphthyl.    EXAMPLE - The desired carboxylic acid ligand, HO2CR (1 equivalent) was added slowly to a stirring solution of sodium hydroxide (1 equivalent) in water. The solution pH was carefully controlled to ensure the formation of a neutral solution. The above solution was added to a stirring solution of zinc chloride (0.5 equivalent) in water affording immediate precipitation of the desired product. The reaction was left to stir for 15-30 minutes before the product was collected by filtration. The product was dried at 100degreesC prior to use.    Similarly, the above procedure was carried out but the solution was added to a stirring solution of indium chloride (0.333 equivalents) instead of zinc chloride.    Formulations containing the preferred zinc and indium carboxylate compounds in various ratios of Zn:In were produced to make high quality films of ZnkIn2O3+k films. The films were prepared at an "oxide" level of 1.875 wt.% (i.e. when expressed as an equivalent amount of ZnO and In2O3). Films were heat-treated and air annealed in a Nanetti Fast Fire Kiln and annealed under N2/H2 atmosphere in a tube furnace. Film thickness was measured using a Laser Profilometer and film structure had been studied using XRD and FIB-TEM. Electrical measurements were made using a Jandel Engineering Four Point Conductivity Probe station in combination with a Keithley 237 high voltage source measurement and Keithley 181 nanovoltmeter.