WO2007118121-A2 -- US20010024837-A1   ;  US20040229444-A1   ;  US20050266658-A1   ;  US7371660-B2   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US7759220-B2 -- JP11045840-A   CANON KK (CANO)   OHMI K,  YONEHARA T,  SAKAGUCHI K,  YANAGITA K;  JP62188150-A   ;  US2981877-A   ;  US4363828-A   IBM CORP (IBMC)   BRODSKY M H,  GREEN D C,  KUCZA J A,  PLECENIK R M,  SCOTT B A;  US4367411-A   VARIAN ASSOC INC (VARI)   HANLEY P R,  TURNER N L;  US4585671-A   MITSUI TOATSU CHEM INC (MITK);  KITAGAWA N (KITA-Individual)   KITAGAWA N,  HIROSE M,  ISOGAYA K,  ASHIDA Y;  US4696758-A   SOVONICS SOLAR SYSTEMS (SOVO-Non-standard);  ENERGY CONVERSION DEVICES INC (ENGD)   OVSHINSKY S R,  GUHA S,  NATH P,  YANG C C,  FOURNIER J,  KULMAN J;  US4799392-A   MOTOROLA INC (MOTI)   WILSON S R,  LORIGAN R P,  PETERSON R L;  US4980562-A   VARIAN ASSOC INC (VARI)   BERRIAN D W,  KAIM R E,  VANDERPOT J W;  US4981408-A   VARIAN ASSOC INC (VARI)   HUGHES J L,  SHULA T E,  RODRIGUEZ C E;  US5120394-A   FUJITSU LTD (FUIT)   MUKAI R;  US5132544-A   NISSIN ELECTRIC CO LTD (NDEN)   GLAVISH H F;  US5196710-A   KALFAIAN M V (KALF-Individual)   KALFAIAN M V;  US5311028-A   NISSIN ELECTRIC CO LTD (NDEN)   GLAVISH H F;  US5374564-A   COMMISSARIAT ENERGIE ATOMIQUE (COMS)   BRUEL M;  US5393984-A   NISSIN ELECTRIC CO LTD (NDEN)   GLAVISH H F;  US5438203-A   NISSIN ELECTRIC CO LTD (NDEN)   NAITO M,  NAGAI N,  GUERRA M A,  GLAVISH H F,  KAWAI T;  US5481116-A   IBIS TECHNOLOGY CORP (IBIS-Non-standard)   GLAVISH H F,  GUERRA M A;  US5483077-A   NISSIN ELECTRIC CO LTD (NDEN)   GLAVISH H F;  US5672879-A   ZIMEC CONSULTING INC (ZIME-Non-standard)   GLAVISH H F;  US5789030-A   MICRON TECHNOLOGY INC (MICR-Non-standard)   ROLFSON J B;  US5877070-A   MAX PLANCK SOC (PLAC)   TONG Q,  GOESELE U M;  US6013563-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6033974-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6100166-A   CANON KK (CANO)   SAKAGUCHI K,  YONEHARA T,  NISHIDA S,  YAMAGATA K;  US6103599-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N;  US6146979-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6162705-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US20010024837-A1   ;  US20020029849-A1   ;  US20020168868-A1   ;  US20020173113-A1   ;  US20020190269-A1   ;  US20020197831-A1   ;  US20030045131-A1   ;  US20030082300-A1   ;  US20030095340-A1   ;  US20030111013-A1   ;  US20030129545-A1   ;  US20030216008-A1   ;  US20030230629-A1   ;  US20030230778-A1   ;  US20040056332-A1   ;  US20040126985-A1   ;  US20040171196-A1   ;  US20040214434-A1   ;  US20040229444-A1   ;  US20050026400-A1   ;  US20050026432-A1   ;  US20050054217-A1   ;  US20050077486-A1   ;  US20050085049-A1   ;  US20050092235-A1   ;  US20050121627-A1   ;  US20050142879-A1   ;  US20050153524-A1   ;  US20050208740-A1   ;  US20050247924-A1   ;  US20050250302-A1   ;  US20050255670-A1   ;  US20050266658-A1   ;  US20050272222-A1   ;  US20050275067-A1   ;  US20060019464-A1   ;  US20060021565-A1   ;  US20060024435-A1   ;  US20060030124-A1   ;  US20060060943-A1   ;  US20060071213-A1   ;  US20060088985-A1   ;  US20060108688-A1   ;  US20060112986-A1   ;  US20060141747-A1   ;  US20070026638-A1   ;  US20070141802-A1   ;  US20070170369-A1   ;  US20070194252-A1   ;  US20080160661-A1   ;  US6171965-B1   SILICON GENESIS CORP (SILI-Non-standard)   KANG S G,  MALIK I J;  US6180496-B1   FARRENS S N (FARR-Individual);  ROBERDS B E (ROBE-Individual)   FARRENS S N,  ROBERDS B E;  US6190937-B1   CANON KK (CANO)   KATSUMI N,  TAKAO Y,  SHOJI N,  SAKAGUCHI K;  US6207964-B1   AXCELIS TECHNOLOGIES INC (AXCE)   MCINTYRE E K,  DELUCA D E,  DIONNE G L,  LOOMIS P A,  RUTISHAUSER H J,  POLNER D N,  LU J;  US6245161-B1   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6287941-B1   SILICON GENESIS CORP (SILI-Non-standard)   KANG S G,  MALIK I J;  US6313475-B1   VARIAN SEMICONDUCTOR EQUIP ASSOC INC (VARI)   RENAU A,  MCKENNA C;  US6368930-B1   ENQUIST M P (ENQU-Individual)   ENQUIST M P;  US6391740-B1   SILICON GENESIS CORP (SILI-Non-standard)   CHEUNG N W,  HENLEY F J;  US6391743-B1   CANON KK (CANO)   IWANE M,  YONEHARA T,  OHMI K,  NISHIDA S,  SAKAGUCHI K,  YANAGITA K;  US6500694-B1   RES TRIANGLE INST (RTRI)   ENQUIST P M;  US6548382-B1   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6558802-B1   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6563133-B1   ZIPTRONIX (ZIPT-Non-standard)   TONG Q;  US6653212-B1   SONY CORP (SONY)   YAMANAKA H,  YAMOTO H;  US6699531-B1   TOKYO ELECTRON LTD (TKEL)   FUKIAGE N;  US6771410-B1   INTEL CORP (ITLC)   BOURLANOFF G I,  LINDSTEDT R,  ATWATER H A,  GIORGI M,  WALTERS R J,  CASPERSON J D,  KIK P G;  US6867073-B1   ZIPTRONIX INC (ZIPT-Non-standard)   ENQUIST P M;  US6902987-B1   RES TRIANGLE INST (RTRI)   TONG Q,  FOUNTAIN G G,  ENQUIST P M;  US6956225-B1   BENVENISTE V M (BENV-Individual)   BENVENISTE V M;  US6455399-B2   SILICON GENESIS CORP (SILI-Non-standard)   KANG S G,  MALIK I J;  US6534381-B2   CHEUNG N W (CHEU-Individual);  EN W G (ENWG-Individual);  FARRENS S N (FARR-Individual);  KOROLIK M (KORO-Individual)   CHEUNG N W,  EN W G,  FARRENS S N,  KOROLIK M;  US6586785-B2   CALIFORNIA INST OF TECHNOLOGY (CALY)   FLAGAN R C,  ATWATER H A,  OSTRAAT M L;  US6627531-B2   RES TRIANGLE INST (RTRI)   ENQUIST P M;  US6696688-B2   DIAMOND SEMICONDUCTOR GROUP INC (DIAM-Non-standard)   BELL E,  HARVEY P,  WHITE N;  US6716751-B2   ASM AMERICA INC (ASMI)   TODD M A;  US6723606-B2   CALIFORNIA INST OF TECHNOLOGY (CALY)   FLAGAN R C,  ATWATER H A,  OSTRAAT M L;  US6740909-B2   ENQUIST M P (ENQU-Individual)   ENQUIST M P;  US6756281-B2   ENQUIST M P (ENQU-Individual)   ENQUIST M P;  US6804062-B2   ATWATER H A (ATWA-Individual);  ZHOU J Q (ZHOU-Individual);  GAMBIN Y (GAMB-Individual);  QUAKE S R (QUAK-Individual)   ATWATER H A,  ZHOU J Q,  GAMBIN Y,  QUAKE S R;  US6818529-B2   APPLIED MATERIALS INC (MATE-Non-standard)   BACHRACH R A,  LAW K;  US6821825-B2   ASM AMERICA INC (ASMI)   TODD M A,  HAWKINS M R;  US6822326-B2   ZIPTRONIX (ZIPT-Non-standard)   ENQUIST P M,  TONG Q,  FOUNTAIN G G,  MARKUNAS R;  US6858107-B2   SOITEC SILICON ON INSULATOR TECHNOLOGIES (SSIT)   GHYSELEN B,  LETERTRE F;  US6858517-B2   SOITEC SILICON ON INSULATOR TECHNOLOGIES (SSIT)   MARTINEZ M,  BOUSSAGOL A;  US6864585-B2   RES TRIANGLE INST (RTRI)   ENQUIST P M;  US6875671-B2   FARIS S M (FARI-Individual)   FARIS S M;  US6881966-B2   BENVENISTE V M (BENV-Individual);  RATHMELL R D (RATH-Individual);  HUANG Y (HUAN-Individual)   BENVENISTE V M,  RATHMELL R D,  HUANG Y;  US6884696-B2   SHINETSU HANDOTAI CO LTD (SHHA)   AGA H,  TOMIZAWA S,  MITANI K;  US6900115-B2   ASM AMERICA INC (ASMI)   TODD M A;  US6903349-B2   APPLIED MATERIALS INC (MATE-Non-standard)   MITCHELL R,  GORDON J,  RELLEEN K,  HORNER R F,  SMICK T H;  US6905557-B2   RES TRIANGLE INST (RTRI)   ENQUIST P M;  US6930316-B2   ULVAC INC (ULVA-Non-standard)   NISHIHASHI T,  FUJIYAMA J,  SAKURADA Y;  US6962858-B2   SOITEC SILICON ON INSULATOR TECHNOLOGIES (SSIT)   NEYRET E,  ECARNOT L;  US6962859-B2   ASM AMERICA INC (ASMI)   TODD M A,  RAAIJMAKERS I;  US6987272-B2   OTA K (OTAK-Individual);  ASDIGHA M (ASDI-Individual)   OTA K,  ASDIGHA M;  US6987572-B2   KLA-TENCOR INC (KLAT)   LAKKAPRAGADA S,  BROWN K A,  HANKINSON M,  LEVY A;  US7019339-B2   CALIFORNIA INST OF TECHNOLOGY (CALY)   ATWATER H A,  ZAHLER J M;  US7029995-B2   TODD M A (TODD-Individual);  BRABANT P D (BRAB-Individual);  WEEKS K D (WEEK-Individual);  WEN J (WENJ-Individual)   TODD M A,  BRABANT P D,  WEEKS K D,  WEN J;  US7205204-B2   SHARP KK (SHAF)   OGAWA Y,  TAKAFUJI Y;  US7371660-B2   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  WO1999008316-A1