NOVELTY - Metal oxide semiconductor particles dispersion contains metal oxide semiconductor particles contacted in a solvent. The metal oxide semiconductor particles have average primary particle diameter of 3-50 nm. Each particles contain distribution component of primary group, which forms secondary particle structure, with average particle diameter of 50-300 nm, and distribution component of secondary group, which forms secondary particle structure, with average particle diameter, which squared 0.8-1.5 times with respect to mean secondary particle diameter (d).    USE - For metal oxide semiconductor electrode of photoelectric conversion cell (both claimed).    ADVANTAGE - The metal oxide semiconductor particles dispersion has excellent film formability, adhesivity and stability, and provides photoelectric conversion cell having high conversion efficiency.    DETAILED DESCRIPTION - Metal oxide semiconductor particles dispersion contains metal oxide semiconductor particles contacted in a solvent. The metal oxide semiconductor particles have average primary particle diameter of 3-50 nm. Each metal oxide semiconductor particles contain a distribution component of a primary group, which forms secondary particle structure with average particle diameter of 50-300 nm, and distribution component of secondary group, which forms secondary particle structure, with average particle diameter, which squared 0.8-1.5 times of formula: (-1+square root of 2)d, with respect to mean secondary particle diameter (d). INDEPENDENT CLAIMS are included for the following:    (1) manufacture of metal oxide semiconductor electrode, which involves forming metal oxide semiconductor particles dispersion into a film on a transparent electrode base material (5);    (2) metal oxide semiconductor electrode; and    (3) photoelectric conversion cell, which has the metal oxide semiconductor electrode, sensitizing dye, electrolyte and conductive counter electrode.    DESCRIPTION OF DRAWING(S) - The figure shows the model of photoelectric conversion cell. (Drawing includes non-English language text)    Metal oxide semiconductor porous layer (1)    Electrolytic solution layer (2)    Transparent electrode layer (3)    Transparent electrode base material (5)    Conducting wire (7)