NOVELTY - Making a copper-indium-gallium (Cu-In-Ga) sputtering target involves melting Cu, In and Ga to form a uniform melt with a pre-determined stoichiometry, spraying the uniform melt into a gas having a lower temperature than the uniform melt to cause the sprayed uniform melt particles to solidify into Cu-In-Ga particles with the pre-determined stoichiometry; and forming the target. The pre-determined stoichiometry has Cu/(In plus Ga) with molar ratio of less than or equal to 10 (preferably less than or equal to 1). The step of forming further uses at least one of Cu, In, Ga, Cu-In, Cu-Ga, and In-Ga particles.    USE - For making copper-indium-gallium (Cu-In-Ga) sputtering target useful for producing thin film absorber layer for solar cell fabrication (claimed), photovoltaic applications and radiation detector.    ADVANTAGE - The method can deposit compositionally uniform precursor film on large area substrates, thus improving yields and device efficiency in manufacturing environment. The method forms compositional uniformity and transfers it to the sputtered film. After the treatment step the treated precursor layer may be reacted with at least one group VIA material to form a group IBIIIAVIA compound layer with high density and good micro-scale compositional uniformity. The precursor layer may be reacted with a Group VIA material without carrying out the treatment step. Thus group IBIIIAVIA compound layer with good micro-scale compositional uniformity may also be formed.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for producing a thin film absorber layer for solar cell fabrication involving sputter depositing a precursor film with a composition comprising Cu, In and Ga and reacting the precursor film with at least one Group VIA material to form a Cu(In, Ga)(VIA)2 compound, where sputter depositing deposits the precursor film from target comprising Cu, In and Ga, but no Group VIA material.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the precursor layer containing two-precursor sub-layers deposited on the base.    base (16)    precursor layer (20)    first precursor sub-layer (21)    second precursor sub-layer. (22)