NOVELTY - Metal oxide semiconductor particles and a specific metal atom complex are contacted in a solvent having moisture content of 10 wt.% or less, and processed metal oxide semiconductor particles dispersion is manufactured. The metal oxide semiconductor particles have average primary particle diameter of 3-50 nm, and average secondary particle diameter of 50-300 nm by weight conversion distribution.    USE - For manufacturing processed metal oxide semiconductor particles dispersion used for metal oxide semiconductor electrode of photoelectric conversion cell (both claimed).    ADVANTAGE - The metal oxide semiconductor particles dispersion has excellent film formability, adhesivity and stability, and provides photoelectric conversion cell having high conversion efficiency.    DETAILED DESCRIPTION - Metal oxide semiconductor particles and a metal atom complex are contacted in a solvent having moisture content of 10 wt.% or less, and processed metal oxide semiconductor particles dispersion is manufactured. The metal oxide semiconductor particles have average primary particle diameter of 3-50 nm, and average secondary particle diameter of 50-300 nm by weight conversion distribution. The metal atom complex has particle structure of formula (1).    M = 1-6 valent metal atom;    A,B = oxygen, nitrogen, phosphorus or sulfur atom; and    X = bivalent organic residue.    INDEPENDENT CLAIMS are also included for:    (1) processed metal oxide semiconductor particles dispersion, which is manufactured by the above method;    (2) manufacture of metal oxide semiconductor electrode, which involves forming processed metal oxide semiconductor particles dispersion into a film on a transparent electrode base material (5);    (3) metal oxide semiconductor electrode; and    (4) photoelectric conversion cell, which has the metal oxide semiconductor electrode, sensitizing dye, electrolyte and conductive counter electrode.    DESCRIPTION OF DRAWING(S) - The figure shows the model of photoelectric conversion cell. (Drawing includes non-English language text)    Metal oxide semiconductor porous layer (1)    Electrolytic solution layer (2)    Transparent electrode layer (3)    Transparent electrode base material (5)    Conducting wire (7)