TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The composition comprises a buffer.Preferred Components: The copolymer comprises more than one optionally substituted monomer selected from thiophenes, pyrroles, anilines, fused polycyclic heteroaromatics, and polycyclic hetero-aromatics.The fluorinated acid polymer comprises at least one optionally substituted styrene sulfonic acid or sulfonated ether sulfone, trifluorostyrene sulfonate, sulfonimide, perfluoroalkyl sulfonate ethers, fused polycyclic fluorinated acids, or perfluoroalkyl sulfonic acid ethers.The thiophenes comprise thiophene di-substituted on 3 and 4 positions by R1 (I) or is a compound of formula (Ia).The pyrrole compounds comprise pyrrole substituted on 1-position by R2 and di-substituted on 3 and 4-positions by R1 (II).The aniline compound comprises aniline substituted by (R1)a and (H)b-1 (III), -NH-1,4-phenylene(substituted by (R1)a and (H)b-1) (IVa) or (IVb).The fused polycyclic heteroaromatic is a compound of formula (V) (preferably compounds of formulae (Va) - (Vd)) or a compound of formula (VI).The styrene sulfonic acid or sulfonated ether comprises benzene substituted on 1-position by CH=CH2 and on 4-position by O(CF2)b-SO2-R13 (VII).The trifluorostyrene sulfonate comprises benzene substituted on 1-position by CF=CF2 and on 4-position by W-SO2-R13 (VIII).The sulfonimide is a compound of formula -(SO2-Rf-SO2-NH-SO2-Rg-SO2-NH)n- (IX).The perfluoroalkyl sulfonate ethers comprise compounds of formula -((CF2-CF2)c-(CF2-CF(O-(CF2-CF(R16)-O)c-(CF2)c-SO2-NH-(SO2-(CF2)c-SO2-NH)c-SO2R16))n- (XI).The fused polycyclic fluorinated acid is compound of formula (XII).The perfluoroalkyl sulfonic acid ethers comprise compounds of formula -(CF2CF2)j(CH2C(Q1)2)k-(C(Q2)2-C(Og-(CF(Rf2)-CF2-Oh)j-CF2-CF2-SO3H)Q2)- (XV).R1 and R8-R12 = H, alkyl, alkenyl, alkoxy, alkanoyl, alkylthio, aryloxy, alkylthio-alkyl, alkylaryl, arylalkyl, amino, alkylamino, dialkylamino, aryl, alkylsulfinyl, alkoxyalkyl, alkylsulfonyl, arylthio, aryl-sulfinyl, alkoxycarbonyl, arylsulfonyl, acrylic acid, phosphoric acid, phosphonic acid, halogen, nitro, cyano, hydroxyl, epoxy, silane, siloxane, alcohol, benzyl, carboxylate, ether, ether carboxylate, amido-sulfonate, ether sulfonate, ester sulfonate or urethane;R1+R1 and R12+R12 = alkylene or alkenylene chain completing 3-7-membered aromatic or alicyclic ring (optionally including at least one divalent nitrogen, sulfur or oxygen);R7 = hydrogen, (hetero)alkyl, (hetero)alkenyl, alcohol, amido-sulfonate, benzyl, carboxylate, ether, ether carboxylate, ether sulfonate, ester sulfonate, or urethane;m = 2 or 3;R2 = H, alkyl, alkenyl, aryl, alkanoyl, alkylthio-alkyl, alkylaryl, arylalkyl, amino, epoxy, silane, siloxane, alcohol, benzyl, carboxylate, ether, ether carboxylate, ether sulfonate, ester sulfonate, or urethane;a and c = 0-4;b = 1-5;a+b = 5;Q = S or NR6 (preferably S or NH);R6 = H or alkyl;R8+R9 and R10+R11 = an alkenylene chain completing a 5 or 6-membered aromatic ring (optionally include at least one divalent nitrogen, sulfur or oxygen);R9+R10 = R8+R9 (preferably -CH=CH-CH=CH-, a group of formula (Va) - (Vf));T = S, NR6, O, Si(R6)2, Se or PR6;E = alkenylene, or (hetero)arylene;R13 = OH or NHR14;R14 = (fluoro)alkyl, sulfonylalkyl or sulfonyl-fluoroalkyl;W = (CF2)q, O(CF2)q, S(CF2)q, (CF2)q-O(CF2)r, or SO2(CF2)q;Rf = fluorinated (hetero)alkylene, or fluorinated (hetero)arylene;Rg = fluorinated (hetero)alkylene, fluorinated (hetero)arylene or (hetero)arylene;n = at least 4;R16 = fluorinated alkyl or aryl;d = 0-2 (preferably 0);R17 = H, halogen, 1-10C alkyl or alkoxy, Y, C(R'f)(R'f)OR21, R4Y or OR4Y (optionally substituted by halogen or ether oxygen) (preferably F, H, C(CF3)2-OCH2OCH3);R18 = R17 (preferably CO2R21 or O(CF2)2-SO2F);R19 and R20 = R17 (preferably F or H);Y = COE2, SO2E2, or sulfonimide;R21 = H or an acid-labile protecting group (preferably group capable of forming or rearranging to tertiary cation, especially 1-20C alkyl, particularly tert-butyl);R'f = 1-10C fluoroalkyl;C(R'f)(R'f) = (CF2)e;e = 2-10;R4 = alkylene (optionally substituted by halogen or ether oxygen);E2 = OH, halogen or OR7;R5 (sic) = an alkyl group;j and k = greater than or equal to0;j+k = 4-199;Q1 and Q2 = F or H;Rf2 = F or 1-10C perfluoroalkyl optionally substituted by at least one ether oxygen;h and g = 0 or 1;i = 0-3;E4 = H or an alkali metal.Provided that:(1) at least one R7 is not hydrogen; and(2) at least one of R17 - R20 is Y, R4Y or OR4Y.The monomer containing W as S(CF2)q is polymerized and then oxidized to give the polymer containing W as SO2(CF2)q. The pyrrole monomer and aniline monomer (IVa) or (IVb) are unsubstituted. The monomer (Va), (Vb), or (Vc) is a thienothiophene. The monomer (VII) is SFS or SFSI (not defined). The colloid-forming polymeric acid is highly-fluorinated sulfonic acid polymer (FSA polymer).The copolymer comprises at least two conductive precursor monomers, or at least one conductive copolymer and at least one non-conductive copolymer.The fluorinated acid polymer comprises siloxane sulfonic acid pendant groups. The fluorinated acid polymer is a colloid-forming polymeric acid. The fluorinated acid polymer comprises a polymeric backbone having pendant groups of formula -Oa-Si(OH)b'-a-(R22)3-b'-R23-RfaSO3H. The fluorinated acid polymer component forms a film that is organic solvent wettable or organic solvent non-wettable.a = 1-b';b' = 1-3;R22 = a non-hydrolyzable group selected from alkyl, aryl, and arylalkyl;R23 = a bidentate alkylene radical (optionally substituted by at least one ether oxygen atoms);Rfa = a perfluoralkylene radical (optionally substituted by at least one ether oxygen).The R23 has at least two carbon atoms linearly disposed between Si and Rf.Preferred Method: At least a portion of the fluorinated acid polymer is present when the conductive monomers are added or when the oxidizing agent is added. EXAMPLE - Oxidative copolymerization of 3,4-ethylenedioxythiophene (EDT) and pyrrole in the presence of Nafion (RTM: a 23.3 wt./wt.% aqueous colloidal dispersion of perfluroethylenesulfonic acid with an equivalent weight (EW) of 1017.7 i.e. an organic solvent non-wettable acid) was carried out by using a procedure similar to the procedure in US6150426 Example 1, Part 2, except that the temperature was 270degreesC. The Nafion (49.62 g) was added to a 500 ml resin kettle. To the Nafion, 285.8 g deionized and 0.2448 g 37 wt./wt.% HCl solutions were added separately. A stock solution of ferric sulfate was made first by dissolving ferric sulfate hydrate (0.0446 g) with deionized water to a total weight of 6.8667 g. The ferric sulfate solution (5.43 g) was added to the acid/water mixture. While the mixture was stirred at 200 revolutions per minute (rpm), a solution of sodium persulfate was made by dissolving sodium persulfate (1.23 g) with deionized water to a total weight of 9.47 g. The sodium persulfate solution and 0.22 ml ethylene-dioxythiophene (EDT)/pyrrole mixture (0.143 ml) were added to the acid/water/catalyst mixture in 14 hours at a constant rate. The addition of the monomer mixture and the Na2S2O8/water solution was accomplished by placing them in a separate syringe. The reaction was stopped in 7.4 hours after completion of the addition.    An aliquot of polymerization mixture (53.2 g) was taken and the rest was added with Lewatit MP62WS (RTM: ion exchange resin) (24.7 g) and Lewatit Monoplus S100 (RTM: ion-exchange resin) (24.9 g) to the reaction mixture and stirring it further for 5 hours. The ion-exchange resins were finally removed from the dispersion. The yield was 200 g.    The sample was further treated with 20 g Amberlyst 15. Particle size count measured with an Accusizer was 0.6 million particles in each 1 ml of dispersion where the particles were greater than 0.75 microns. The UV/Vi/near-IR showed that EDT and pyrrole formed copolymer. The pH of the dispersion was 1 and conductivity of dried film backed at 130degreesC in air for five minutes was measured to be 8.3x10-7 S/cm. The dried film was not wettable with para-xylene. The aqueous pyrrole/EDT copolymer dispersion was spun on a glass plate. The plate had an indium titanium oxide (ITO) thickness of 100 - 150 nm and consisted of 16 backlight substrates. The spin-coated films as buffer layers were baked at 130degreesC for 5 minutes in air. The thickness of the baked buffer layers was about 80 nm.    For the light-emitting layer, a 1 wt./vol.% para-xylene solution of a green polyfluorene light-emitting polymer was spin-coated on top of the buffer layer films and subsequently baked at 130degreesC for 10 minutes on a hot plate in an inert atmosphere dry box. The thickness of the baked films was 75 nm. Immediately after it, a 3 nm thick barium layer and a 350 - 400 nm aluminum layer were deposited on the green light-emitting polymer films to serve as a cathode. The resulting devices have an efficiency of 18 cd/A at 1000 cd/m2. Half-life of the devices was 400 hours at 5000 cd/m2.