NOVELTY - Thin aluminum anode galvanic cell is fabricated on silicon wafer by depositing silicon nitride layer onto wafer; spinning negative photoresist onto wafer; patterning silicon nitride to form electrode(s) on wafer; developing the patterned resist; heat drying the wafer; depositing adhesion layer on wafer; depositing catalytic metal layer onto wafer; performing lift-off of catalytic metal layer to form electrode; depositing dielectric layer onto wafer; depositing aluminum layer on wafer; baking the wafer; and etching a patterned aluminum layer to form aluminum electrode.    USE - For fabrication of thin aluminum anode galvanic cell on silicon wafer.    ADVANTAGE - The method is highly reproducible that enables high volume manufacturing of galvanic cells.    DETAILED DESCRIPTION - Fabrication of thin aluminum anode galvanic cell on silicon wafer comprises:    (a) cleaning the silicon wafer and spinning the wafer until substantially dry;    (b) depositing a silicon nitride layer onto the wafer;    (c) spinning negative photoresist onto the wafer;    (d) pre-baking the wafer;    (e) patterning the silicon nitride to form electrode(s) on the wafer;    (f) post-exposure baking the wafer;    (g) developing the patterned resist for the electrode;    (h) cleaning the wafer and spinning the wafer until substantially dry;    (i) heat drying the wafer to drive out any moisture associated with the development process;    (j) depositing an adhesion layer on the wafer;    (k) depositing a catalytic metal layer onto the wafer;    (l) performing lift-off of the catalytic metal layer to form electrode;    (m) cleaning the silicon wafer and spinning the wafer until substantially dry;    (n) depositing a dielectric layer onto the wafer;    (o) depositing an aluminum layer on the wafer;    (p) spinning a positive photoresist pattern onto the wafer;    (q) baking the wafer;    (r) developing the resist pattern on the wafer;    (s) rinsing the wafer in deionized water and spinning the wafer until substantially dry;    (t) etching the patterned aluminum layer to form aluminum electrode;    (u) rinsing the wafer in deionized water and spinning the wafer until substantially dry;    (v) removing the photo resist;    (w) rinsing the wafer in deionized water and spinning the wafer until substantially dry; and    (x) etching the dielectric layer, wherein the catalytic metal electrode acts as an etch stop and the aluminum electrode acts as a mask, thus preserving the dielectric under the aluminum electrode and forming the thin aluminum anode galvanic cell on the silicon wafer.    An INDEPENDENT CLAIM is included for a thin aluminum anode galvanic cell on a silicon wafer.    DESCRIPTION OF DRAWING(S) - The figure shows a diagrammatic view fabricated meshed cells.