NOVELTY - The apparatus (1) comprises porous oxide semiconductor layers (3,4) and an electrolyte layer (7) stacked on an electroconductive substrate (2). The arithmetic mean deviation of surface of porous oxide semiconductor layer (3) at light-incidence side is smaller than the arithmetic mean deviation of surface of porous oxide semiconductor layer (4) at optical-emission side. The thickness of porous oxide semiconductor layer (3) at light-incidence side is more than the thickness of porous oxide semiconductor layer (4) at optical-emission side.    USE - For photoelectric-conversion apparatus of dye-sensitizing type, such as solar cell, light receiving element and optical sensor etc., used in photovoltaic apparatus (claimed).    ADVANTAGE - The photoelectric current from the pigment of each porous oxide semiconductor layer is increased by increasing the absorption amount of pigment and suppressing the increase of electrical resistance of porous oxide semiconductor layers. The photoelectric conversion efficiency is raised.    DETAILED DESCRIPTION - The porous oxide semiconductor layers consist of sintered compact of oxide semiconductor fine particles. The average particle diameter of the sintering particles of the semiconductor fine particles of porous oxide semiconductor layer at optical-emission side is larger than the average particle diameter of sintering particles of semiconductor fine particles of porous oxide semiconductor layer at light-incidence side. The optical-absorption intensity in long-wavelength region of pigment supported by the porous oxide semiconductor layer at optical-emission side is larger than the optical-absorption intensity in long-wavelength region of pigment supported by the porous oxide semiconductor layer at light-incidence side. An INDEPENDENT CLAIM is included for manufacturing method of photoelectric-conversion apparatus which involves stacking the porous oxide semiconductor layers on the electroconductive substrate. The average particle diameters of primary particle of the porous oxide semiconductor layers is kept identical before sintering the oxide semiconductor fine particle of the porous oxide semiconductor layers. The dispersed phase of the porous oxide semiconductor layer at light-incidence side is the primary particle of the oxide semiconductor fine particle. A dispersion medium is applied and baked so as to form the liquid paste. The liquid paste added with the organic resin particle is applied to the porous oxide semiconductor layer at optical-emission side and is baked.    DESCRIPTION OF DRAWING(S) - The figure shows a sectional view of the photoelectric-conversion apparatus.    Photoelectric-conversion apparatus (1)    Electroconductive substrate (2)    Porous oxide semiconductor layers (3,4)    Electrolyte layer (7)    Counter electrode (8)