TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Dispersion: Metal oxide semiconductor particles and a metal atom complex are contacted in solvent having moisture content of 10 wt.% or less, and secondary particle structure of metal oxide semiconductor particles of primary, secondary and tertiary groups is formed, to obtain metal oxide semiconductor particles dispersion. The metal atom complex has partial structure of formula (1), preferably formula (2).M=1-6 valent metal atom;A,B=oxygen, nitrogen, phosphorus or sulfur atom;X=bivalent organic residue, and arrow shows coordinate bond or ionic bond from A and B to M;andR1-R3=H or monovalent substituent, and the broken line shows non-localizing coupling in diketonate compound.Preferred Particles: The metal oxide semiconductor particles contain titanium oxide, zinc oxide, stannic oxide and/or niobium oxide. Preferred Method: Heating, pressurization, ultrasonic welding processing, microwave irradiation processing, ultraviolet irradiating processing, and ozone treatment are carried out during manufacture of metal oxide semiconductor electrode. After forming a layer on transparent base material using the dispersion, another layer is formed using metal oxide semiconductor particles component in which 5-100 wt.% of the particles have primary particle diameter of more than 50 nm and 300 nm or less. Preferred Properties: The particle size distribution of secondary particle structure is less than standard deviation plus minus70 nm. The thickness of metal oxide semiconductor particle dispersion formed into film on base material is 2-50 microns. The film is then heat processed at 250degreesC or less. The distribution component of tertiary group of secondary particle structure has average particle diameter, which squared 0.8-1.5 times of formula: (-2+square root of 6)(d)/2, with respect to mean secondary particle diameter (d). The particle number of secondary particles structure of secondary group or sum total of particle number of secondary particle structure of secondary and tertiary groups is 0.8-4 times in particle number ratio to particle number of secondary particle structure of primary group.    TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The material of transparent electrode base material is a resin. EXAMPLE - Titanium oxide (metal oxide semiconductor particles) (in g) (12), titanium acetyl acetonate (Ti=O(acaca)2) (metal-atom complex) (1.2) and solvent (1-propanol) (20) were mixed to obtain metal oxide semiconductor particles primary group having secondary particle diameter of 127 nm and standard deviation of plus minus48 nm. Similarly, metal oxide semiconductor particles secondary group having secondary particle diameter of 61 nm and standard deviation of plus minus38 nm was formed, and metal oxide semiconductor particles dispersion was manufactured. The obtained dispersion was used for forming an electrode having thickness of 19.5 microns. A photoelectric conversion cell formed using the electrode has conversion efficiency of 6.3%.