NOVELTY - An abatement apparatus comprises an oxidation unit adapted to receive an effluent stream from a semiconductor device manufacturing chamber, and remove hazardous air pollutants (HAPs) and volatile organic compounds (VOCs) from the stream; a first water scrubber unit adapted to receive the effluent stream from the oxidation unit and remove perfluorocompounds (PFCs) from the effluent stream; and a catalysis unit adapted to receive the effluent stream from the first water scrubber unit and remove acid byproducts from the effluent stream.    USE - For abating a gaseous waste stream containing hazardous air pollutants (HAPs) and volatile organic compounds (VOCs), perfluorocompounds (PFCs) and acid byproducts, of a semiconductor device manufacturing system (claimed).    ADVANTAGE - The abatement apparatus has an overall abatement capacity greater than an abatement capacity of the oxidation unit or or catalysis unit alone. The apparatus uses combination of oxidation, post oxidation scrubbing, catalysis and post catalysis scrubbing, which provides a total abatement solution for deposition processes such as chemical vapor deposition, etch processes, cleaning processes and numerous other semiconductor device manufacturing processes. Such a combination can provide 99% abatement efficiency on nearly all semiconductor gaseous byproducts including PFCs, HAPs, and VOCs. The combination of oxidation and catalysis provides significant improvement in halogen abatement, and the addition of catalysis chamber can increase fluorine and chlorine abatement capacity by as much as double when compared to oxidation alone. The oxidation chamber is capable of abating about 2 liters/minute of a fluorine-containing waste stream with an abatement efficiency of at least 99%. Use of an oxidation chamber with a catalytic chamber can significantly increase the performance and/or lifetime of the catalytic chamber. Use of oxidation before catalysis removes harmful gaseous waste stream products and/or by-products before the waste stream enters into a catalysis bed. The catalysis bed lifetime and efficiency can be improved, as the catalytic material is not degraded by such contaminants. The catalysis bed lifetime and efficiency is improved as pre-oxidation reduces the quantity of gaseous waste to be abated by effectively abating HAPs, VOCs, etc.. When such gasses and/or chemistries are abated within the combined oxidation and catalysis system, a large improvement in overall abatement efficiency, capacity and lifetime of the abatement system is realized. Because water and electricity are employed for abatement, no combustible or flammable fuel such as methane or hydrogen is required. The abatement system can be created by retrofitting an existing oxidation chamber with a catalysis chamber/scrubber backpack. Such a configuration has little or no impact on chemical vapor deposition (CVD) performance or throughput, minimal risk for requalifying existing fabrication facilities and low cost when retrofitted to existing systems for PFC abatement.    DETAILED DESCRIPTION - An abatement apparatus comprises an oxidation unit adapted to receive an effluent stream from a semiconductor device manufacturing chamber, and remove hazardous air pollutants (HAPs) and volatile organic compounds (VOCs) from the stream; a first water scrubber unit adapted to receive the effluent stream from the oxidation unit and remove perfluorocompounds (PFCs) from the effluent stream; and a catalysis unit adapted to receive the effluent stream from the first water scrubber unit and remove acid byproducts from the effluent stream. The abatment apparatus further comprises a second water scrubber unit adapted to receive the effluent stream from the catalysis unit; a heat exchanger adapted to heat a waste stream before the waste stream enters the catalysis unit; and a pressure regulation device coupled to an output of the abatement apparatus and adapted to create a draft or negative pressure that draws gaseous waste stream out of the abatement apparatus.    INDEPENDENT CLAIMS are also included for:    (1) method of abating gaseous waste streams of a semiconductor device manufacturing system; and    (2) method for forming the abatement system.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic diagram of a processing system.