EP1772907-A2  JACK T WALTON ED - JACK T WALTON: "SILICON DETECTORS: NEW CHALLENGES", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH, vol. 226, no. 1, 1 September 1984 (1984-09-01), XP001432223,;  WALTON J T ET AL: "Si(Li) x-ray detectors with amorphous Silicon passivation", IEEE NUCLEAR SCIENCE SYMPOSIUM. CONFERENCE RECORD, XX, XX, vol. 31, no. 1, 1 February 1984 (1984-02-01), pages 331-335, XP008082836,;  HANSEN W L ET AL: "PROTECTIVE SURFACE COATINGS ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS", IEEE TRANS. ON NUCLEAR SCIENCE,, vol. 27, no. 1, 1 February 1980 (1980-02-01), pages 247-251, XP001432804,;  LUKE P N ET AL: "Amorphous Ge bipolar blocking contacts on Ge detectors", PROCEEDINGS OF THE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE. SANTA FE, NOV. 2 - 9, 1991; [PROCEEDINGS OF THE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE], NEW YORK, IEEE, US, vol. -, 2 November 1991 (1991-11-02), pages 85-89, XP010057968, DOI: 10.1109/NSSMIC.1991.258915 ISBN: 978-0-7803-0513-7US7960645-B2  Witvrouw, et al.; Microsystem Technologies 6 (2000) 192-199; "Why CMOS-integrated transducers? A review.";  Singh, et al.; Sensors and Actuators 77 (1999) 133-138; "Strain studies in LPCVD polysilicon for surface micromachined devices.";  Lin, et al; J. Electrochem. Soc., vol. 141, No. 9, Sep. 1994, 2559-2563; "Effects of SiH4, GeH4, and B2H6 on the Nucleation and Deposition of Polycrystalline Si1-xGex Films.";  King, et al.; J. Electrochem. Soc., vol. 141, No. 8, Aug. 1994, 2235-2240; "Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films".;  Luke et al., 'Germanium Orthogonal Strip detectors with Amorphous-Semiconductor contacts', 1999 IEEE Nuclear Science Symposium Conference Record, Seattle WA, Oct. 25-28, 1999.;  Luke et al., "Germanium Orthogonal Strip Detectors with Amorphous Semiconductor Contacts", 2000 IEEE, pp. 201-204.;  D. K. Schroder, D. L. Meier, "Solar Cell Contact Resistance_A Review," IEEE Transactions on Electron Devices, vol. ED-31(5), 637-647 (1984).;  Yong Liu, "High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD," Ph.D. thesis, Electrical Engineering (Microelectronics), Major Professor Vikram Dalai, OSTI ID 803355, Iowa State University, Ames, IA (2002).;  Nguyen Van Dong, Y. Fornier and J. Y. Lee, "Electrical and optical properties of sputtered amorphous siicon films prepared under a reduced pumping speed," Applied Physics Letters 42(7) 594-596 (1983).;  Office Action dated Jun. 4, 2007 in co-pending U.S. Appl. No. 10/841,803, filed May 6, 2004.