EP1755154-A1  'MBE growth and optical properties of ZnO on GaAs (1111) substrates' PHYS. STAT. SOL. (B vol. 241, 2004, pages 591 - 594;  'Plasma assisted MBE growth and characterization of hexagonal ZnO on GaAs (1111' PROCEEDING OF 1ST ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS 2003, pages 153 - 156;  NAKAHARA K ET AL: "Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE)" JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 227-228, July 2001 (2001-07), pages 923-928, XP004250964 ISSN: 0022-0248;  MATSUBARA K ET AL: "Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition" PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 422, no. 1-2, 20 December 2002 (2002-12-20), pages 176-179, XP004399123 ISSN: 0040-6090;  OTT A W ET AL: "Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates" MATER CHEM PHYS; MATERIALS CHEMISTRY AND PHYSICS MAR 25 1999 ELSEVIER SEQUOIA SA, vol. 58, no. 2, 25 March 1999 (1999-03-25), pages 132-138, XP002391281;  PAVLIK J. ET AL: "Study of argon/oxygen plasma used for creation of aluminium oxide thin film" SUPERFICIES Y VACIO, vol. 9, December 1999 (1999-12), pages 131-134, MEXICOUS7744965-B2  K. Nakahara et al.; Journal of Crystal Growth, vol. 227-228, Jul. 2001, pp. 923-928.;  K. Matsubara et al.; Room-temperature deposition of A1-doped ZnO films by oxygen radical-assisted pulsed laser deposition; Thin Solid Films, vol. 422, No. 1-2, Dec. 20, 2002, pp. 176-179.;  A.W. Ott et al.; Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates, Materials Chemistry and Physics, Mar. 25, 1999, vol. 58, No. 2, Mar. 25, 1999, pp. 132-138.;  Plasma assisted MBE growth and characterization of hexagonal ZnO on GaAs(111), Proceeding of 1st Asia-Pacific Workshop on Widegap Semiconductors, Mar. 9-12, 2003, pp. 153-156.;  Takashi Matsumoto et al.; MBE growth and optical properties of ZnO on GaAs(111) substrates, Phys. Stat. Sol. (b), 241, No. 3, pp. 591-594 (2004).;  Jaroslav Pavlik et al.; Study of argon/oxygen plasma used for creation of aluminium oxide films; Superficies Y Vacio, vol. 9, Dec. 1999, pp. 131-134.EP1755154-B1  NAKAHARA K ET AL: "Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE)" JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 227-228, July 2001 (2001-07), pages 923-928, XP004250964 ISSN: 0022-0248;  MATSUBARA K ET AL: "Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition" PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, vol. 422, no. 1-2, 20 December 2002 (2002-12-20), pages 176-179, XP004399123 ISSN: 0040-6090;  OTT A W ET AL: "Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates" MATER CHEM PHYS; MATERIALS CHEMISTRY AND PHYSICS MAR 25 1999 ELSEVIER SEQUOIA SA, vol. 58, no. 2, 25 March 1999 (1999-03-25), pages 132-138, XP002391281;  PAVLIK J. ET AL: "Study of argon/oxygen plasma used for creation of aluminium oxide thin film" SUPERFICIES Y VACIO, vol. 9, December 1999 (1999-12), pages 131-134, MEXICO