NOVELTY - Photovoltaic device is produced by forming a blanket passivation layer on a surface of a semiconductor wafer (212) utilizing a non-contact patterning apparatus to define openings through the passivation layer (215), where each opening exposes a corresponding doped region (214) on the wafer surface; and utilizing a direct-write metallization apparatus to deposit a contact portion (218) of conductive lines (219) in the openings (217).    USE - For producing a photovoltaic device to convert solar power into electrical energy.    ADVANTAGE - By arranging such non-contact, direct-write metallization apparatus immediately downstream of the laser-based non-contact patterning apparatus, the method enables the precise placement of metallization over the just-formed contact openings without an expensive and time-consuming alignment step. The method reduces the manufacturing costs and complexity, and improves the operating efficiency of the resulting photovoltaic devices. By utilizing a non-contact patterning apparatus define the contact openings, the invention facilitates the formation of smaller openings with higher precision, thus enabling the production of an improved metal semiconductor contact structure with lower contact resistance and a more optimal distribution of contacts.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a system for producing a photovoltaic device; and    (2) a front surface contact-type photovoltaic device.    The contact portion is deposited in the openings by depositing a first, silicide-forming metal in the openings. A second metal is deposited on the first metal. It has a greater electrical conductivity than the first metal. A lower metal layer is deposited on the surface of the semiconductor wafer inside each opening by depositing a first paste comprising nickel, and an upper metal layer is deposited on the lower metal layer by depositing a second paste comprising silver or copper. The metal layers are deposited by depositing a solder wetting material over the second metal layer. The semiconductor wafer comprises one of crystalline silicon, amorphous silicon, cadmium telluride, or copper-indium-gallium-diselenide.    DESCRIPTION OF DRAWING(S) - The figure is a simplified diagram showing an assembly for producing photovoltaic devices.    Semiconductor wafer (212)    Doped region (214)    Passivation layer (215)    Openings (217)    Contact portion (218)    Conductive lines (219)