NOVELTY - A thin-film processing apparatus comprises a processing chamber with a connected evacuation subsystem. Injection nozzles (80, 80.1-80.4) are spaced apart around outer periphery of the chamber exterior wall. Individual injection nozzle penetrates the chamber wall. Injected gas is distributed substantially in a linear pattern. A transport subsystem within the processing chamber carries one or more substrates in a manner that the substrates pass in close proximity to the injection nozzles in a sequential order and repeat the sequential passing while the transport subsystem operates.    USE - The apparatus is used for large are multi-layer atomic layer chemical vapor deposition processing of thin films. The apparatus is useful for the manufacture of semiconductor devices, large area thin-film photovoltaic solar cells, flexible displays and catalytic electrodes for fuel cells.    ADVANTAGE - The apparatus is capable of operating at high-speed and within minimum possible foot-print or physical space to uniformly process a substrate or multiple substrates. The apparatus can process a variety of thin films with high degree of uniformity, precision and control on film thickness and composition.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of processing a thin film. Individual injection nozzle has dedicated evacuation apparatus to remove excess injected gas in the immediate vicinity of that nozzle during operation. The injection nozzles comprise a first nozzle injecting a first reactive gas to form a chemisorbed monolayer, a second nozzle injecting a first inert gas to purge remnant of the first reactive gas, a third nozzle injecting a second reactive gas to react chemically with the chemisorbed first reactive gas to form a monolayer of a film, and a fourth nozzle injecting a second inert gas to purge remnant of the second reactive gas. The transport subsystem comprises a drum of polygonal cross-section rotating within the substantially round chamber.    DESCRIPTION OF DRAWING(S) - The figure is a schematic vertical cross sectional view of an atomic layer chemical vapor processing (ALCVP) reactor.    Injection nozzles (80, 80.1-80.4)    Susceptor (230)    Heater (252)