NOVELTY - The method of forming a p-n junction on a silicon sheet for manufacturing photovoltaic/solar cell and solar panel, comprises placing (110) the silicon sheet having p-type silicon material inside a plasma enhanced chemical vapor deposition chamber, delivering (120) a mixture of precursors having silicon-, hydrogen- and phosphorus-containing compounds into the deposition chamber, depositing (130) a n-type phosphorus doped amorphous silicon film over the p-type silicon material at a temperature and forming (140) a capping layer over the n-type amorphous silicon film.    USE - Useful for forming a p-n junction on a silicon sheet for manufacturing photovoltaic/solar cell and solar panel including passivated emitter rear locally diffused cell, thin film silicon cell and zone-melting recrystallization cell.    ADVANTAGE - The method ensures the effective solar cell p-n junction formation, which improves the effective manufacturing process of solar cells with desired operating voltage and current, good conduction and high reflectivity in an economical manner.    DETAILED DESCRIPTION - The method of forming a p-n junction on a silicon sheet for manufacturing photovoltaic/solar cell and solar panel, comprises placing (110) the silicon sheet having p-type silicon material inside a plasma enhanced chemical vapor deposition chamber, delivering (120) a mixture of precursors having silicon-, hydrogen- and phosphorus-containing compounds into the deposition chamber, depositing (130) a n-type phosphorus doped amorphous silicon film over the p-type silicon material at a temperature, forming (140) a capping layer having silicon nitride material over the n-type amorphous silicon film by the chemical vapor deposition, annealing (150) the sheet at a temperature in a rapid thermal processing chamber to obtain the p-n junction to a desired depth and to form the p-n junction on the silicon sheet, stripping the capping layer, removing the capping layer from the surface of the sheet, and depositing (160) a hydrogenated inorganic barrier layer having silicon nitride material on the surface of the silicon sheet. The annealing temperature is greater than the deposition temperature. The hydrogenated inorganic barrier layer comprises 5-30 atomic % of hydrogen. The thickness of the amorphous silicon film is 50-200 nm on the surface of the sheet over the p-type silicon material.    DESCRIPTION OF DRAWING(S) - The figure shows a flow diagram for the formation of solar cell p-n junction:    Placing of silicon sheet in a vacuum deposition chamber; (110)    Delivering the mixture of precursors in vacuum deposition chamber; (120)    Depositing a phosphorus doped silicon film on the sheet; (130)    Forming a capping layer on the silicon film; (140)    Annealing the silicon sheet; (150)    Depositing a hydrogenated inorganic barrier layer on the surface of the silicon sheet. (160)