NOVELTY - Passivation of a part(s) of a surface of a semiconductor substrate (1), comprises generating a plasma (P) by plasma source(s) (3) mounted on a process chamber (5) at a specific distance (L) from the substrate surface; contacting a part(s) of the plasma generated by each source with the part of the substrate surface; and supplying a precursor(s) for silicon oxide realization to the part of plasma, where the layer(s) realized on the substrate is subjected to a temperature treatment in a gas environment, where temperature treatment particularly comprises a forming gas anneal treatment.    USE - The method is for passivation of a part(s) of a surface of a semiconductor substrate useful for a solar cell (claimed).    ADVANTAGE - The method provides SiOx layer or SiOx/SiNx stack having a stable, particularly low surface recombination velocity of approximately 50 cm/s. The semiconductor substrate has a very low resistivity.    DETAILED DESCRIPTION - Passivation of a part(s) of a surface of a semiconductor substrate, comprises realizing a layer(s) comprising silicon oxide (SiOx) layer(s) on the part of the substrate surface by placing the substrate in a process chamber; maintaining the pressure in the process chamber at a relatively low value; maintaining the substrate at a specific substrate treatment temperature for realizing the layer; generating a plasma by plasma source(s) mounted on the process chamber at a specific distance from the substrate surface; contacting a part(s) of the plasma generated by each source with the part of the substrate surface; and supplying a precursor(s) for SiOx realization to the part of the plasma, where the layer(s) realized on the substrate is subjected to a temperature treatment in a gas environment, where temperature treatment particularly comprises a forming gas anneal treatment.    An INDEPENDENT CLAIM is also included for a solar cell provided with a part(s) of a semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of an apparatus for treating a substrate.    Semiconductor substrate (1)    Plasma source (3)    Process chamber (5)    Specific distance (L)    Plasma (P)