TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred composition: The laminated component further contains a thin-film silicon layer, amorphous silicon layer, polycrystalline-silicon layer and/or thick film semiconductor layer.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The film base material is polybenzazole film in which molecular-chain crosslinking of polybenzazole having substituent(s) in benzazole ring is performed. Preferred Properties: The film has thickness of 3-200 microns, isotropy of tensile-strength ratio of 0.85-1.2, and tension fracture strength of 300 MPa or more. EXAMPLE - 4,6-diamino resorcinol dihydrochloride (in g) (4.9), 2-methyl-4, 6-diamino resorcinol dihydrochloride (0.6), terephthalic acid (4.3) and phosphorous pentaoxide (8.1) were added to 116% polyphosphoric acid (27.1) in a reactor under nitrogen atmosphere and stir-mixed at 75degreesC for 15 minutes. Then, the mixture was oligomerized and polymerized to obtain copolymerized poly-(p-phenylene benzo bis-oxazole) PBO polymer dope (10 mol%). The polymer dope was yellow in color and had intrinsic viscosity of 21 dl/g. The dope was interposed into polytetrafluoroethylene sheet and heat pressed at 170degreesC under pressure of 150 kgf/cm2. The dope sheet was peeled off from polytetrafluoroethylene sheet and dipped in 1 L of distilled water for 15 hours to extract phosphoric acid. The sheet was fixed to one side of the steel frame of 10 cm and dried at 80degreesC for 1 hour to obtain a film. The obtained film had copolymerization of 30%, length of 15 microns, tensile rupture intensity of 415 MPa along machine direction (MD) and 365 MPa along transverse direction (TD), tensile strength ratio along MD/TD of 88, linear expansion coefficient (CET) of 5 ppm/degreesC along MD and 4 ppm/degreesC along TD and conversion efficiency of 7.3%. The stainless steel layer having thickness of 900 nm was formed on the film. Subsequently, counter electrode and support electrode were installed, and the reactor was exhausted to 10-5 Torr. The temperature of the support electrode was raised to 350degreesC. High frequency voltage of 13.56 MHz of 30 W was applied to counter electrode and support electrode. Then, argon gas was supplied, and silane diluted to 10% with hydrogen gas, and phosphine diluted to 1% with hydrogen gas, were supplied to form n-type amorphous-silicon layer on stainless steel layer. Subsequently, i-type amorphous-silicon layer having thickness of 500 nm was laminated on n-type amorphous-silicon layer. Then, mixed gas containing 1% diborane was introduced into silane gas to form p-type amorphous-silicon layer on i-type amorphous-silicon layer. Subsequently, indium-tin-oxide layer of 50 nm thickness was formed to obtain hetro electrode layer. A palladium layer having thickness of 100 nm was vacuum-deposited in comb-shape to obtain film-form solar cell. The obtained solar cell had excellent planar property and heat resistance, without wrinkles.