WO2008049103-A3  See also references of EP 2087151A2EP2087151-A2  KAMPMANN ET AL: "ELECTRODEPOSITION OF CIGS ON METAL SUBSTRATES", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS; [MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS], MATERIALS RESEARCH SOCIETY, PITTSBURG, PA; US, vol. 763, 1 January 2003 (2003-01-01), pages 323-328, XP009081441, ISBN: 978-1-55899-828-5;  ZHANG L ET AL: "Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 80, no. 4, 1 December 2003 (2003-12-01), pages 483-490, XP004470057, ISSN: 0927-0248, DOI: 10.1016/J.SOLMAT.2003.06.014;  See also references of WO 2008049103A2US7713773-B2  Abou-Elfotouh, FA, et al., "Studies of the Electrical and Interface Properties of the Metal Contacts to CuInSe2 Single Crystals", J. Vac. Sci. Technol. A., 8(4), Jul./Aug. 1990, pp. 3251-3254.;  Barnard, WO, et al., "Comparison Between Ruthenium-based and Other Ohmic contact Systems to p-Type GaAs", Appl. Phys. Lett., 61(16), Oct. 19, 1992, pp. 1933-1935.;  Britt, JS, et al., "Cost Improvement for Flexible CIGS-based Product", IEEE, 2006, pp. 388-391.;  Dey, S., et al., "Platinum Group Metal Chalcogenides", Platinum Metals Rev., 48(1), 2004, pp. 16-29.;  Ghosh, B., et al., "A Novel Back-Contracting Technology for CuInSe2 Thin Films", Semiconduct. Sci. Tech., 11, 1996, pp. 1358-1362.;  Huang, C.J. et al., "Formation of CuInSe2 Thin Films on Flexible Substrates by Electrodepositon (ED) Technique", Solar Energy Mats.&Solar Cells, 82, 2004, pp. 553-565.;  Jones, T., Electrodeposition and Electroless Deposition of Precious Metals, Ch. 3, "Deposition of Ruthenium", Finishing Publications Ltd., 2003, pp. 69-71.;  Kadam, A., et al., "Study of Molybdenum Back Contract Layer to Achieve Adherent and Efficient CIGS2 Absorber Thin-Film Solar Cells", J. Vac. Sci. Tech. A., 23(4), Jul./Aug. 2005, pp. 1197-1201.;  Kim, YS, et al., "Electrochemically Deposited Ruthenium Seed Layer Followed by Copper Electrochemical Plating", Electrochem.&Solid State Lett., 9(1), 2006, pp. C19-C23.;  Lide, D., CRC Handbook of Chemistry and Physics, "Periodic Table of the Elements", CRC Press, 85th Ed., 2004-2004, 1 page.;  Malmstrom, J., et al., "Enhanced Back Reflectance and Quantum Efficiency in Cu(In,Ga)Se2 Thin Film Solar Cells with ZrN Back Reflector", Appl. Phys. Letts., 85(13), Sep. 27, 2004, pp. 2634-2636.;  Moffat, TP, et al., Electrodeposition of Cu on Ru Barrier for Damascene Processing, J. of the Electrochem. Soc., 153(1), 2006, pp. C37-C50.;  Moons, E., et al., "Ohmic Contacts to P-CuInSe2 Crystals", J. of electron. Mats., 22(3), 1993, pp. 275-280.;  Myburg, G., et al., "Annealing Characteristics and Thermal Stability of Electron Beam Evaporated Ruthenium Schottky contacts to n-GaAs", Appl. :hys. Lett., 60(5), Feb. 3, 1992, pp. 604-606.;  Nelson, A., et al., "Formation of Schottky Barrier Height of Au Contacts to CuInSe2 ", J. Vac. Sci. Technol. A., 9(3), May/Jun. 1991, pp. 978-982.;  Orgassa, K., et al., "Alternative Back Contact Materials for Thin Film Cu(In,Ga)Se2 Solar Cells", Thin Solid Films, 431-432, 2003, pp. 387-391.;  Schulz, KJ, et al., "Interfacial Reactions in the Ir/GaAs System", J. Appl. Phys., 67(11), Jun. 1, 1990, pp. 6798-6806.;  Vadimsky, RG., et al., "Ru and RuO2 as Electrical Contact Materials",, J. Electrochem. Soc., Nov. 1979, pp. 2017-2023.;  Weisberg, A., "Ruthenium Plating", Metal Finishing, M. Murphy, Editor, The Audit Bureau, 71st Guidebook and Director, 101(1A), Jan. 2003, p. 243.;  Bhattacharya, R.N., et al., "CuIn1-xGaxSe2-based Photovoltaic Cells from Electrodeposited Precursor Films", Solar Energy Mats&Solar Cells, vol. 76, 2003, pp. 331-337.;  Binsma, J.J., et al., "Preparation of Thin CuInS2 Films via a Two Stage Process", Thin Solid Films, 97, 1982, pp. 237-243.;  Calixto, M.E., et al., "CuInSe2 Thin Films Formed by Selenization of Cu-In Precursors", J. of Mats. Sci., 33, 1998, pp. 339-345.;  Chirabi et al., "Influence of Citrate Ions as Complexing Agent for electrodeposition of CuInSe2 Thin Films", Phys. Stat. Sol., (a), 2001, vol. 186, No. 3, pp. 373-381.;  Ezzaouia, et al., "Synthesis of Ruthenium and Osmium Dichalocgenide Single Crystals", J. of Mat. Science Lett., 1994, vol. 3, pp. 625-626.;  Fernandez, et al., "Electrodeposited and Selenized (CuInSe2) (CIS) Thin Films for Photovoltaic Applications", Solar Energy Materials and Solar Cells,52, 1998, pp. 423-431.;  Friedfeld, R., et al., "Electrodeposition of CuInxGa1-xSe2 Thin Films", Solar Energy Mats.&Solar Cells, 58, 1999, pp. 375-385.;  Fritz, H.P., et al., "A New Electrochemical Method for Selenization of Stacked CuIn Layers and Preparation of CuInSe2 by Thermal Annealing", Thin Solid Films, 247, 1994, pp. 129-133.;  Ganchev, M., et al., "Preparation of Cu(In,Ga)Se2 Layers by Selenization of Electrodeposited Cu-In-Ga Precursors", Thin Solid Films, 511-512, 2006, pp. 325-327.;  Grindle, S.P., et al., "Preparation and Properties of CuInS2 Think Films Produced by Exposing rf-Sputtered Cu-In Films to an H2S Atmosphere", Appl. Phys. Lett, 35(1) Jul. 1, 1979, pp. 24-26.;  Guillen, C., et al., "New Approaches to Obtain CuIn1-xGaxSe2 Thin Films by Combining Electrodeposited and Evaporated Precursors", Thin Solid Films323, 1998, pp. 93-98.;  Guillen, C.,et al., "CuInSe2 Thin Films Obtained by a Novel Electrodeposition and Sputtering Combined Method," Vacuum, 58, 2000, pp. 594-601.;  Gupta, A., et al., "CuInS2 Films Prepared by Sulfurization of Electroless Deposited Cu-In Alloy", Solar Energy Mats., 18, 1988, pp. 1-8.;  Hansen, "Cu-Ga Copper Gallium", Constitution of Binary Alloys, 2nd Ed., McGraw Hill, pp. 582-584 (1958).;  Kampmann, A., et al., "Electrodeposition of CIGS on Metal Substrates", Mat. Res. Soc. Symp. Proc., 763, 2003, pp. B8.5.1-B8.5.6.;  Kapur, V.K., et al., "Low Cost Thin Film Chalcopyrite Solar Cells", IEEE, 1985, p. 1429-1432.;  Kapur, V.K., et al., "Low Cost Methods for the Production of Semiconductor Films for CuInSe2/CdS Solar Cells", Solar Cells, 21, 1987, pp. 65-72.;  Kim, et al., "Preparation of CuInSe2 Thin Films Using Electrodeposited In/Cu Metallic Layer", First WCPEC, Dec. 5-9, 1994, Hawaii, IEEE, pp. 202-205.;  Kumar, et al., "Properties of CuInSe2 Films Prepared by the Rapid Thermal Annealing Technique", Thin Solid Films, 223, 1993, pp. 109-113.;  Lokhande, C., et al., "Preparation of CuInSe2 and CuInS2 Films by Reactive Annealing in H2 Se2 or H2 S", Solar Cells,, 21, 1987, pp. 215-224.;  Rudiger, M., "Photoelectrochemical Solar Energy Conversion," Topics in Current Chemistry, 1988, vol. 143, pp. 79-112.;  Subramanian, P., et al., "The Cu-In(Copper Indium) System", Bulletin of Alloy Phase Diagram, vol. 10, No. 5, pp. 554-568 (1989).;  Supplemental Search Report issued Dec. 14, 2009 in EP 07 75 2440.