TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The silyl halide compound is of formula (HnSiX4-n) (where X is F, Cl, Br or I, and n is 0-3). Preferred Process: The plasma discharge is produced from silyl halide existing- or containing gas. The plasma discharge is produced in a gas (a), which is subsequently mixed with silyl halide existing- or containing gas. (a) additionally contains hydrogen, diluting inert gas and/or plasma discharge favoring mixtures. The plasma discharge is supported by bringing free charge carriers into the discharge zone. The free charge carriers are produced by creating high voltage between electrodes. The plasma discharge is produced by irradiating electromagnetic alternating field. The production of halogenated polysilane takes place in a pressure of 0.1-1000 hPa. The inlet temperature of the silyl halide containing gas into a reactor, which results the production of the halogenated polysilane, lies at 67-100degreesC and the temperature of the gas mixture leaving the reactor is less than 400degreesC. The temperature of the walls of the reactor lies less than 400degreesC. The temperature for the decomposition of the halogenated polysilane is more than 500degreesC. The decomposition of the halogenated polysilane takes place under reduced pressure. During decomposition of the halogenated polysilane, a gas flow is led by the used device. The gas-flow contains hydrogen and inert gases. The decomposition to silicon takes place within or outside the reactor. The gas, in which plasma discharge is produced, contains hydrogen halide. EXAMPLE - A mixture of hydrogen and tetrafluorosilane (SiF4) (1:1, 45 mmol) was filled in a device. The developed gas mixture was led with a pressure of 10-20 hPa by a quartz tube and by means of high voltage between two electrodes. Then a pulsed microwave radiation (2.45 GHz) with pulse energy of 800 W and a pulse duration of 1 ms followed by 19 ms was irradiated, according to average output of 40 W. Then approximately after 7 hours, a white to brownish solid (0.63 g) was obtained. The solid was warmed up to 800degreesC in the vacuum, the material was decomposed and developed for silicon. The decomposition to silicon taken place within or outside of a reactor. The gas, in which plasma discharge was produced, contained hydrogen halide.