NOVELTY - A stretchable component of a device, comprises a central region disposed between two ends. It is supported by a substrate. The ends of the component are bonded to the substrate (30). At least a portion of the central region of the component has a bent configuration. A curved portion of the component has amplitude of 100 nm to 1 mm. The component comprises a ribbon structure having a thickness of greater than 100 nm, preferably 300 nm and 1 mm.    USE - A stretchable component for a device array (claimed), e.g. electronic device, optical device, opto-electronic device, mechanical device, microelectromechanical device, nanoelectromechanical device, microfluidic device, thermal device, photodetector, photodiode array, display, light emitting device, photovoltaic device, sensor array, sheet scanner, LED display, semiconductor laser array, optical imaging system, large-area electronic device, transistor array, logic gate array, microprocessor, or an integrated circuit.    ADVANTAGE - The stretchable component is capable of undergoing a strain of up to 25% or up to 150% without fracturing. It has improved stretchability, electrical properties, and related processes for rapid and reliable manufacture of stretchable interconnects (10) in different configurations.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a method of tuning a property of a stretchable component of a device;    (2) a method of making stretchable components of a device;    (3) a method of making a biaxially stretchable semiconductor membrane;    (4) a method for making a device by assembling printable semiconductor elements comprising a combination of two different semiconductor materials from single crystal silicon, silicon, germanium, silicon carbide, aluminum phosphide, aluminum arsenide, aluminum antimonide, gallium nitride, gallium phosphide, gallium arsenide, gallium antimonide, indium phosphide, indium arsenide, gallium antimonide, indium antimonide, zinc oxide, zinc selenide, zinc telluride, cadmium sulfide, cadmium selenide, zinc selenide, zinc telluride, cadmium telluride, mercury sulfide, lead sulfide, lead telluride, aluminum gallium arsenide, aluminum indium arsenide, aluminum indium phosphide, gallium arsenic phosphide, gallium indium arsenide, gallium indium phosphide, aluminum gallium arsenide antimonide, aluminum gallium indium phosphide, silicon germanide, or gallium indium arsenide phosphide;    (5) a method of making a multilayer device structure; and    (6) a multilayer device structure.    The component comprises materials from metal, semiconductor, insulator, piezoelectric material, ferroelectric material, magnetostrictive material, electrostrictive material, superconductor, ferromagnetic material, or thermoelectric material. The substrate and metal have an interface that is Au/Su-8 epoxy photoresist. The substrate having wavy features is made by anisotropic etching of silicon (100) or by embossing Su-8.    DESCRIPTION OF DRAWING(S) - The drawing is a sectional view of an image of a smoothly wavy substrate.    Buckled interconnects (10)    Substrate (30)