NOVELTY - The method for crystallization or re-crystallization of an amorphous silicon layer for producing thin layers of amorphous silicon, comprises applying a semiconductor layer onto a substrate, temporarily irradiating the semiconductor layer using a laser light of a semiconductor laser, and pre-heating and/or post-heating the semiconductor layer by a laser radiation. The laser light has a linear distribution of intensity in the region of the semiconductor layer. The linear distribution of intensity is moved in a direction (x) perpendicular to the extension of the line across the semiconductor layer, and has an intensity profile (5).    USE - The method for crystallization or re-crystallization of an amorphous silicon layer for producing thin layers of amorphous silicon, which is applied on glass during the production of thin-layer solar cells and flat screen production.    ADVANTAGE - The method ensures effective crystallization or re-crystallization of an amorphous silicon layer in improved manner thus producing reliable and economic thin layers of amorphous silicon with high electron mobility.    DETAILED DESCRIPTION - The method for crystallization or re-crystallization of an amorphous silicon layer for producing thin layers of amorphous silicon, comprises applying a semiconductor layer onto a substrate, temporarily irradiating the semiconductor layer using a laser light of a semiconductor laser, and pre-heating and/or post-heating the semiconductor layer by a laser radiation. The laser light has a linear distribution of intensity in the region of the semiconductor layer. The linear distribution of intensity is moved in a direction (x) perpendicular to the extension of the line across the semiconductor layer, and has an intensity profile (5) having an intensity peak (7) and two extended regions (6, 8). The extended regions of the profile of the laser light are formed, so that the pre-heating and/or post-heating of the semiconductor layer are guaranteed by a motion of the extended regions over the semiconductor layer. The first extended region in a scanning direction (4) is arranged above the intensity peak and the second extended region in the scanning direction is arranged below the intensity peak. Each section of the semiconductor layer to be restructured is irradiated first with the intensity peak and then with the extended regions. The two regions are more extended in the direction (x) perpendicular to the extension of the line than the intensity peak. The intensities of the two regions are smaller than the intensity of the intensity peak and are larger than zero. The intensity of the intensity peak is more than four times larger than the intensity of the extended region. The extended region has a power density of 100 W/cm2 to 100 kW/cm2 and a width of 0.1-10.0 mm. The intensity peak has a power density of 1 kW/cm2 to 1 MW/cm2 and a width of less than 0.1 mm. The width of the extended region is more than four times larger than the width of the intensity peak. The semiconductor laser is operated in the continuous wave-operation. The scanning speed is 1-20 m/min.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of the intensity profile.    Scanning direction (4)    Intensity profile (5)    Extended region (6, 8)    Intensity peak. (7)