NOVELTY - The fabrication of an optical sensitive layer of a solar cell having silicon quantum dots, comprises obtaining a substrate (1) stacked with a layer of indium tin oxide (11) and titanium oxide (12), placing the substrate in a reaction chamber, and forming a nucleation layer of silicon quantum dots, a growth layer of silicon quantum dots and a passivation layer of silicon quantum dots on the titanium oxide layer of the substrate through a plasma-enhanced chemical vapor deposition and multi-pulses to directly grow a structure having distributed silicon quantum dots.    USE - Useful for fabricating an optical sensitive layer of a solar cell.    ADVANTAGE - The process enhances an optoelectronic conversion efficiency in an economical manner.    DETAILED DESCRIPTION - The fabrication of an optical sensitive layer of a solar cell having silicon quantum dots, comprises obtaining a substrate (1) stacked with a layer of indium tin oxide (11) and titanium oxide (12), placing the substrate in a reaction chamber, forming a nucleation layer of silicon quantum dots, a growth layer of silicon quantum dots and a passivation layer of silicon quantum dots on the titanium oxide layer of the substrate through a plasma-enhanced chemical vapor deposition and multi-pulses to directly grow a structure having distributed silicon quantum dots, and directly depositing a film having carbides of silicon quantum dots on an outside of the structure through single pluses to obtain a distribution layer of silicon quantum dots on a surface of the layer of titanium oxide. The nucleation layer of silicon quantum dots, the growth layer of silicon quantum dots and the passivation layer of silicon quantum dots are formed on the titanium oxide layer using a precursor of silane and a carrier gas of argon in the reaction chamber. The substrate is made of a conductive glass and a plastic material. The silane in the reaction chamber has a density and a flow ratio of 1-20%. A working gas pressure in the reaction chamber is located between 1-2000 mTorr, and a working temperature is between a room temperature and 350degrees C. Dangling bonds of silicon-hydrogen and silicon-carbon are obtained on surfaces of silicon atoms through the formation of the passivation layer of silicon quantum dots. A gas providing atoms is used during the formation of the passivation layer of silicon quantum dots. A thickness of the distribution layer of silicon quantum dots is thinner than 100 nm.    DESCRIPTION OF DRAWING(S) - The diagram shows a substrate:    Substrate; (1)    Indium tin oxide; (11)    Titanium oxide. (12)