NOVELTY - The procedure for cleaning metallurgical silicon melt (36) useful for the production of electronic devices, electronic components and solar cells, comprises mixing several reaction gases or a mixture of several reaction gases to a feed gas in temporarily shifted manner and then supplying to the melt in a crucible (30), so that it causes thorough mixing of the melt. The inert gas is used as the feed gas. The reaction gases react with impurities present in the melt, so that the impurities are transferred into a gaseous composition by a chemical oxidation or a thermal reaction.    USE - Procedure for cleaning metallurgical silicon melt (claimed) useful for the production of electronic devices, electronic components and solar cells.    ADVANTAGE - The procedure ensures economical and efficient cleaning of silicon melt with 100% purity, high throughput and less-energy consumption in less-time consuming manner.    DETAILED DESCRIPTION - The procedure for cleaning metallurgical silicon melt (36) useful for the production of electronic devices, electronic components and solar cells, comprises mixing several reaction gases or a mixture of several reaction gases to a feed gas in temporarily shifted manner and then supplying to the melt in a crucible (30), so that it causes thorough mixing of the melt. The inert gas is used as the feed gas. The reaction gases react with impurities present in the melt, so that the impurities are transferred into a gaseous composition by a chemical oxidation or a thermal reaction. An inert gas flow (38) is formed over a surface of the melt and is formed under using inert gas. The inert gas and the mixed reaction gases are supplied over immersion lances (32a, 32b) and/or a spongy structure in a crucible wall. The silicon melt is held at a temperature of 1400-1500 degrees C during the supply of the reaction gases. The gases forming the inert gas flow and/or the gaseous composition are sucked off and then supplied to a condensation trap. The inert gas supplied to the melt is partially separated from the seized gaseous composition and/or seized particles and are reused in the inert gas flow. Melt flows are formed in the crucible by supplying the inert gas in the melt. The inert gas is supplied to the melt at different places and/or is delivered into the melt in different directions for the formation of the local melt flows in the crucible. The different melt flows are formed in temporal sequence. An INDEPENDENT CLAIM is included for a device for cleaning metallurgical silicon melt.    DESCRIPTION OF DRAWING(S) - The diagram shows a device for cleaning silicon melt.    Crucible (30)    Immersion lances (32a, 32b)    Melt (36)    Inert gas flow (38)    Reaction chamber. (42)