NOVELTY - An organic field-effect transistor (T1) comprises a substrate, a gate structure, a source electrode and a drain electrode located on the substrate, and at least one perylene diimide compound as n-type organic semiconducting compound at least on the area of the substrate where the gate structure, the source electrode and the drain electrode are located.    USE - In an electronic device; in organic light-emitting diode (OLED); in an inverter; in organic solar cell (all claimed); in optical devices, optoelectronic devices (e.g. semiconductor devices for communications and other applications such as light emitting diodes, electroabsorptive modulators and lasers), mechanical devices; integrated circuit architectures, bipolar junction transistors, tunnel diodes, modulation doped superlattices, complementary inverters, light-emitting devices, light-sensing devices, biological system imagers, biological and chemical detectors or sensors, thermal or temperature detectors, Josephine junctions, nanoscale light sources, photodetectors such as polarization-sensitive photodetectors, latches, flip-flops, registers, switches, clock circuitry, static or dynamic memory devices and arrays, state machines, gate arrays, and any other dynamic or sequential logic or other digital devices including programmable circuits.    ADVANTAGE - The organic field-effect transistor using the perylene diimide compound exhibits a good transistor performance and good air-stability.    DETAILED DESCRIPTION - An organic field-effect transistor (T1) comprises a substrate, a gate structure, a source electrode and a drain electrode located on the substrate, and at least one perylene diimide compound of formula (I) as n-type organic semiconducting compound at least on the area of the substrate where the gate structure, the source electrode and the drain electrode are located.    R1=(CnH2n)-Ra group, or optionally substituted or saturated 3 to 5 membered carbocycle;    Ra=cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl, hetaryl (all optionally substituted) or H;    n=1-4;    R2=(CnH2n)-Rb group, or optionally substituted or saturated 3 to 5 membered carbocycle;    Rb=cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl, hetaryl (all optionally substituted) or H.    INDEPENDENT CLAIMS are included for the following:    (1) producing (P1) the organic field-effect transistor (T1) involving providing a substrate comprising gate structure, source electrode and drain electrode located on the substrate, and applying at least one perylene diimide compound of formula (I) as n-type organic semiconducting compound at least on the area of the substrate where the gate structure, the source electrode and the drain electrode are located;    (2) producing a substrate involving a pattern of n-type organic field-effect transistors, where at least part of the transistors comprise perylene diimide compound of formula (I) as n-type organic semiconducting compound;    (3) a substrate comprising a pattern of n-type organic field-effect transistors where at least part of the transistors comprise at least one perylene diimide compound of formula (I) as n-type organic semiconducting compound;    (4) producing a crystalline perylene diimide compound of formula (I) involving subjecting the perylene diimide compound of formula (I) to a physical vapor transport.