NOVELTY - The reactive magnetron sputtering for large-scale separation of chalcopyrite absorbing layers in thin-film solar cells on a substrate (3) by a magnetron sputter source with a copper target, inert gas, a chalcogen containing reactive gas in magnetron plasma, and ions and neutral particles, comprises directly admitting the chalcogen containing reactive gas parallel to the surface of the substrate, adjusting the chalcogen containing reactive gas portion of 5-30% to the inert gas portion in the magnetron plasma and adjusting high sputtering pressure between 1-2 Pa.    USE - Reactive magnetron sputtering for large-scale separation of chalcopyrite absorbing layers for thin-film solar cells on a substrate (claimed) for the production of metal layer, optical layer, magnetic layer, hard material layer and protective layer.    ADVANTAGE - The process ensures safe and extensive separation of chalcopyrite absorbing layers with high chemical reactivity without damaging the sensitive semiconductor layer.    DETAILED DESCRIPTION - The reactive magnetron sputtering for large-scale separation of chalcopyrite absorbing layers in thin-film solar cells on a substrate (3) by a magnetron sputter source with a copper target, inert gas, a chalcogen containing reactive gas in magnetron plasma, and ions and neutral particles, comprises directly admitting the chalcogen containing reactive gas parallel to the surface of the substrate, adjusting the chalcogen containing reactive gas portion of 5-30% to the inert gas portion in the magnetron plasma, adjusting high sputtering pressure between 1-2 Pa, applying a negative prestress at the substrate for the production of a defined additional energy between 20-50 eV for the positively charged ions above the substrate, serially arranging different targets (1, 2) with same sputtering performance in the magnetron sputter source or directly arranging target (1/2) with different sputtering performances in the magnetron sputter source for adjusting stoichiometry gradients, stimulating the magnetron plasma with high frequency alternating voltage of 6 MHz, heating the substrate at 350-500degrees C, separating copper-depleted chalcopyrite for the substrate, removing surplus CuxS and/or a chemical bath deposition for the production of a cadmium sulfide buffer layer by wet-chemical corroding step, producing a graduated gap transition of the narrow bindings of the chalcopyrite-absorbing layer to a buffer layer adjoining in the thin-film solar cell by corresponding selection of the target materials, and measuring a process feedback by Raman spectrometry phase analysis. The measured values of the process feedback correspond to the variation of the magnetron sputtering performance and/or the substrate prestress. A ratio of (In)/(cu), which is greater than 1, is adjusted.    DESCRIPTION OF DRAWING(S) - The diagram shows an arrangement of the targets, substrate and heater.    Targets (1, 2)    Substrate (3)    Halogen lamps. (4)