NOVELTY - Polycrystalline silicon manufacturing apparatus comprises fusing evaporator (5) of zinc; vertical reactor provided with a heater; silicon chloride gas supply nozzle (2) for connecting vaporizer (8) of silicon chloride and the vertical reactor, and for supplying silicon chloride gas supplied from the vaporizer into the vertical reactor; zinc gas supply nozzle (3) disposed to connect the fusing evaporator and the vertical reactor and for supplying a zinc gas supplied from the fusing evaporator into the vertical reactor; and exhaust gas vent pipe connected to the vertical reactor.    USE - Apparatus for manufacturing high purity polycrystalline silicon (claimed) useful as raw material of silicon for a solar cell and for a semiconductor.    ADVANTAGE - A polycrystalline silicon in which a silicon crystal is agglomerated in a tube shape is grown in a manner that the polycrystalline silicon hangs from the silicon chloride gas supply nozzle. The polycrystalline silicon can be grown without coming into contact with an inner wall surface of the reactor thus high purity polycrystalline silicon can be obtained without being affected by a contamination of a material of the reactor. The apparatus is capable of producing 99.999% purity polycrystalline silicon.    DETAILED DESCRIPTION - Polycrystalline silicon manufacturing apparatus comprises:    (A) vaporizer of silicon chloride;    (B) fusing evaporator of zinc;    (C) vertical reactor provided with a heater on its peripheral face;    (D) silicon chloride gas supply nozzle disposed to connect the vaporizer of silicon chloride and the vertical reactor and for supplying a silicon chloride gas supplied from the vaporizer of silicon chloride into the vertical reactor;    (E) zinc gas supply nozzle disposed to connect the fusing evaporator of zinc and the vertical reactor and for supplying a zinc gas supplied from the fusing evaporator of zinc into the vertical reactor; and    (F) exhaust gas vent pipe connected to the vertical reactor.    The fusing evaporator of zinc includes a main vertical cylinder part connected to the upper part of a zinc evaporator; a solid trapping pipe inserted into the main vertical cylinder part; a zinc introducing pipe connected to the solid trapping pipe at an angle; a seal pot disposed to surround the lower end opening portion of the solid trapping pipe and for configuring the bottom face of solid trapping pipe; an induction heater disposed on the peripheral face of the main vertical cylinder part and capable of controlling a temperature; and a gas vent pipe connected to the side wall of the zinc evaporator. An INDEPENDENT CLAIM is included for a method for manufacturing a high purity polycrystalline silicon using the apparatus comprising supplying a silicon chloride gas from the silicon chloride gas supply nozzle and a zinc gas from the zinc gas supply nozzle into the vertical reactor; and generating downward a polycrystalline silicon agglomerated in almost tube shape on the leading end part of the silicon chloride gas supply nozzle by a reaction of the silicon chloride gas and the zinc gas.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic block diagram showing a manufacturing facility provided with an apparatus for manufacturing a polycrystalline silicon.    Silicon chloride gas supply nozzle (2)    Zinc gas supply nozzle (3)    Fusing evaporator (5)    Vaporizer (8)    Cooling and grinding apparatus (60)