NOVELTY - A zinc oxide (ZnO) composition comprises zinc oxide alloy.    USE - As p-type or n-type conductor material in ZnO crystalline film useful in semiconductor photovoltaic device; in optoelectronic device including photodiodes, solar cells, optical detectors, optical emitters, light emitting diodes (LEDs), and laser diodes (claimed).    ADVANTAGE - The zinc oxide alloy provides a material having band gap energies over an energy spectrum 1-6 eV. The ZnO-based alloys have band gap energies as low as 1 eV, which permit energy absorption in the red and near IR regions of the energy spectrum.    DETAILED DESCRIPTION - A zinc oxide (ZnO) composition comprises zinc oxide alloy ZnxA'(1-x)B'(1-y)Oy (I).    x and y=0-1;    A'=Mg, Be, Ca, Sr, Cd or In;and    B'=Te or Se.    INDEPENDENT CLAIMS are included for the following:    (1) a ZnO crystalline film comprising ZnxA'(1-x)B'(1-y)Oy (I) disposed on a substrate;    (2) a semiconductor photovoltaic device (D1) having at least one junction comprising an n-type semiconductor material; a p-type semiconductor material disposed in contact with the n-type semiconductor material; where each of the n-type and p-type semiconductor materials comprises compound ZnxA(1-x)B'(1-y)Oy (II), where each of x, y, A, and B' is selected to provide a junction bandgap corresponding to selected spectral range (preferably 1-6 eV) for absorption by the photovoltaic device;    (3) a semiconductor photovoltaic device (D2) comprising several semiconductor junctions, each comprising: an n-type semiconductor material; a p-type semiconductor material disposed in contact with the n-type semiconductor material; where each of the n-type semiconductor material and the p-type semiconductor material comprises the compound (II) provide a bandgap for the semiconductor junction, where the several semiconductor junctions are selected to correspond to a selected spectral range for the semiconductor photovoltaic device;    (4) making a photodiode involving epitaxially growing a first p/n junction on a crystalline substrate in a CVD process in a continuous process, the first p/n junction comprising: n-type semiconductor material; a p-type semiconductor material, where each of the first doped semiconductor material and the second doped semiconductor material comprising (II), and where each of x, y, A, and B' is selected to provide a bandgap for the semiconductor junction, by varying the composition of a vapor source of zinc, a vapor source of A, a vapor source of O and a vapor source of B'; and    (5) an optoelectronic device (D3), comprising: at least one n-doped semiconductor material; at least one p-doped semiconductor material; at least one semiconductor material disposed in contact with each of the n-doped semiconductor material and the p-doped semiconductor material; where each of the n-doped semiconductor material, the p-doped semiconductor material, and the semiconductor material comprises the compound (I).    A=Mg, Be, Ca, Sr, Ba, Mn, Cd or In.