NOVELTY - Forming a solar cell or photovoltaic device, involves generating plasma stream in a thermal plasma source; and thermally processing silicon intermediate(s) in liquid and/or gaseous form with hydrogen to form a polycrystalline silicon film directly on a substrate (306). The thermal processing is configured to promote enhanced grain quality of the polycrystalline silicon film as formed. The thermal processing is carried out by thermal plasma spray deposition or by thermal plasma enhanced chemical vapor deposition.    USE - For forming a solar cell or photovoltaic device such as polycrystalline silicon or silicon-germanium solar or photovoltaic cells (claimed).    ADVANTAGE - The method involves thermal processing which promotes enhanced grain quality of the polycrystalline silicon film as formed. The method produces polycrystalline silicon and silicon-germanium solar cells at reduced cost and with high efficiency. The thermal plasma deposition process provides a fast deposition process, can be carried out essentially at atmospheric pressure or at reduced pressure, capable of large scale production of low cost polycrystalline silicon or silicon-germanium photovoltaic cells having a large area form factor in an automated, continuous fashion.    DETAILED DESCRIPTION - Forming a solar cell or photovoltaic device, involves generating plasma stream in a thermal plasma source; and thermally processing silicon intermediate(s) in liquid and/or gaseous form with hydrogen to form a polycrystalline silicon film directly on a substrate (306). The thermal processing is configured to promote enhanced grain quality of the polycrystalline silicon film as formed. The thermal processing is carried out by thermal plasma spray deposition or by thermal plasma enhanced chemical vapor deposition. The thermal processing involves mixing germanium intermediates with the silicon intermediates to form a polycrystalline silicon-germanium film; or mixing dopant compounds with the silicon intermediates to form a doped polycrystalline silicon film. An INDEPENDENT CLAIM is included for a system (300) for manufacturing a solar cell or photovoltaic device, comprising a handling mechanism (308) configured to support and transport substrate(s); a plasma chamber (302) comprising a thermal plasma spray gun (310) configured to generate a thermal plasma spray (312) to deposit a polycrystalline silicon or silicon-germanium film on the surface of the substrates as the substrates are conveyed through the plasma chamber; and a post deposition chamber comprising at least one heating mechanism configured to generate a beam of light that melts the polycrystalline silicon or silicon-germanium film in linear zones as the substrates are conveyed through the post deposition chamber.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a system for manufacturing solar cell or photovoltaic device.    system (300)    plasma chamber (302)    substrate (306)    handling mechanism (308)    thermal plasma spray gun (310)    thermal plasma spray. (312)