NOVELTY - A multilayer structure to form an absorber layer (502) for solar cells, comprises a base (504) containing a substrate layer (506); a metallic precursor layer formed on the base, and including at least one Group IB and Group IIIA material; and a dopant structure (512) formed on the metallic precursor layer and containing a Group IA material.    USE - For forming absorber layer including doped Group IBIIIAVIA absorber layer for solar cells (claimed) for converting sunlight directly into electric power.    ADVANTAGE - The multilayer structure forms absorber layer by a techniques such as sputtering, evaporation, and ink deposition; and it is suitable for wet deposition techniques e.g. electrodeposition and electroless deposition. The multilayer structure forms absorber layer for solar cell having improved efficiency.    DETAILED DESCRIPTION - A multilayer structure to form an absorber layer (502) for solar cells, comprises a base (504) containing a substrate layer (506); a metallic precursor layer formed on the base, and including at least one Group IB and Group IIIA material; and a dopant structure (512) formed on the metallic precursor layer and containing a Group IA material. The dopant structure is a dopant stack comprising a buffer layer on the metallic precursor layer, a dopant-bearing film on the buffer layer, and a cap layer formed on the dopant-bearing film. The buffer layer and the cap layer comprise a Group VIA material. The dopant-bearing film comprises the Group IA material. The dopant-bearing film has a thickness of 2-100 nm. The dopant carrier layer has a thickness of 250-2600 nm. The buffer layer has a thickness of 50-500 nm. The cap layer has a thickness of 200-2000 nm. The metallic precursor layer comprises at least 80% metallic phase. An INDEPENDENT CLAIM is included for forming a doped Group IBIIIAVIA absorber layer on a base, involving depositing a metallic precursor layer comprising at least one Group IB and Group IIIA material on the base; forming a dopant structure on the precursor layer, where dopant structure contains a dopant material including at least one of sodium (Na), potassium (K) and lithium (Li); and reacting the precursor layer and the dopant structure.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the pre-absorber structure including dopant carrying layer formed on the precursor layer.    Multilayer stack (500)    Absorber layer (502)    Base (404)    Substrate layer (506)    Precursor layer (510)    Dopant structure. (512)