NOVELTY - Silicon solar cell structure fabrication comprises co-firing a p-silicon substrate (424) having n' layer, silicon nitride anti-reflective layer, silver metal contacts, aluminum grid, and silicon nitride layer; and forming a co-fired silicon solar cell structure, where silver contacts are in electrical communication with n+ layer and an aluminum back surface field layer is formed.    USE - Method of fabricating silicon solar cell structure for use in solar cell modules useful e.g. for orbiting space satellites, remote telecommunication repeaters, fiber optic amplifiers, remote street signs, telephone booths, outdoor lighting, homes, businesses, and utility scale power generation.    ADVANTAGE - The method provides silicon solar cell structure having reduced or eliminated light-induced degradation as compared to boron-doped p-silicon with high oxygen concentration grown by Czochralski method (e.g. absence of boron-oxygen pair), superior bulk lifetimes (10-2500, preferably 100-1000 mu s), superior ohmic contact, superior solar cell performance and efficiency, superior Al BSF, superior fill factor (0.75-0.85, preferably 0.78-0.81), superior open circuit voltage (Voc) (550-650, preferably 640-650 mV), and superior short circuit current density (Jsc) (28-36, preferably 34-36 mA/cm2), superior blue response, superior series resistance (0.01-1, preferably 0.80-1 Omega -cm2), superior shunt resistance (1000-5000, preferably 1000-2000 k Omega /cm2), superior junction leakage current density (1-10, preferably 7-10 nA/cm2), superior emitter saturation current density, superior base saturation current density, superior grid design, gridline width, and gridline shrinkage, and final metal gridline resistivity, as compared with other solar cells.    DETAILED DESCRIPTION - Silicon solar cell structure fabrication comprises providing a p-silicon substrate (402) having a top-side and a back-side; forming n+ layer on the top-side of the p-silicon substrate; forming a silicon nitride anti-reflective (AR) layer (408) on the top-side of the n+ layer; forming silver (Ag) contacts (410) on the silicon nitride AR layer using a screen-printing technique; forming a silicon nitride layer disposed on the back-side of the p-type silicon substrate; forming an aluminum grid (422) on the back-side of the silicon nitride layer using a screen-printing technique, where aluminum grid includes aluminum contacts that are fired through the silicon nitride layer; co-firing the p-silicon substrate having the n' layer, silicon nitride AR layer, Ag metal contacts, aluminum grid, and silicon nitride layer; and forming a co-fired silicon solar cell structure, where Ag contacts are in electrical communication with the n+ layer and an aluminum (Al) back surface field layer (BSF) is formed.    DESCRIPTION OF DRAWING(S) - The drawing illustrates a flowchart for the method of fabricating fired silicon solar cell structure.    Providing p-silicon substrate (402)    Forming silicon nitride AR layer (408)    Forming silver contacts (410)    Forming aluminum grid (422)    Co-firing p-silicon substrate (424)