NOVELTY - A metal film having a predetermined metal capable of providing electrical conductivity to silicon during eutectic reaction, is formed on substrate (10). An amorphous silicon film (14) having low purity with respect to silicon is formed on metal film, and a multilayer substrate (16) is formed. The substrate is heated at preset temperature, such that metal film is moved to surface side from crystallized silicon. The silicon contained in amorphous silicon film is crystallized on surface of substrate (20), and polycrystalline silicon film (18) is formed.    USE - Formation of polycrystalline silicon film used for substrate (claimed) of solar cell and thin-film transistor.    ADVANTAGE - The polycrystalline silicon film having high purity is formed, and provides solar cell having high conversion efficiency.    DETAILED DESCRIPTION - A metal film having a predetermined metal capable of providing electrical conductivity to silicon during eutectic reaction with silicon, is formed on a substrate (10). An amorphous silicon film (14) having low purity with respect to silicon is formed on metal film as evaporation source, and a multilayer substrate (16) is formed. The substrate is heated to temperature less than eutectic temperature of predetermined metal and silicon, such that metal film is moved to surface side from crystallized silicon. The silicon contained in amorphous silicon film is crystallized on surface of substrate (20), and polycrystalline silicon film (18) is formed. The predetermined metal has solution limit field concentration of impurity contained in low purity silicon more than solution limit field concentration of impurity contained in silicon. The predetermined metal is aluminum or boron. The impurity is iron, nickel, chromium, copper and/or manganese.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view illustrating manufacture of substrate having polycrystalline silicon film. (Drawing includes non-English language text)    Quartz substrate (10)    Aluminum film (12)    Amorphous silicon film (14)    Multilayer substrate (16)    Polycrystalline silicon film (18)    Substrate having polycrystalline silicon film (20)