NOVELTY - Fabricating photovoltaic material involves forming crystalline material (105) having worm hole structures that exhibit density distribution, on semiconductor substrate to form thickness of crystalline material to be detached; providing glue layer (103) on crystalline material; joining crystalline material via glue layer to a support substrate (101); delaminating crystalline material from semiconductor substrate, such that a portion of thickness of crystalline material remains attached to support substrate; and forming cover layer (702) with light trapping members, on crystalline material.    USE - For fabricating a photovoltaic material, useful for forming p-type and n-type junction(s) on a portion of crystalline material, and particularly useful in a partially-processed semiconductor substrate used for manufacturing a solar cell; useful for forming a photovoltaic device, and useful for photovoltaic applications (claimed).    ADVANTAGE - The method fabricates photovoltaic material for photovoltaic device in an easy manner, and is compatible with conventional process technology without modifications to conventional equipment and processes. The method provides improved solar cell, which is less costly and easy to handle. The solar cell uses hydrogen co-implant to form thin layer of photovoltaic material, and multiple layers of photovoltaic regions can be formed from a single conventional single crystal silicon material wafer. The textured surface region on substrate has surface roughness of 10 nm to 10 microns, to facilitate capture of photons illuminated on it. The performance of photovoltaic region is enhanced by the shaped cover that includes wedge facets for light trapping. The cover layer provides protection to the crystalline material, and exhibits light trapping capabilities, thus improving durability and performance of the photovoltaic device.    DETAILED DESCRIPTION - Fabricating a photovoltaic material involves forming a crystalline material (105) having several worm hole structures in it, on a semiconductor substrate, where the worm hole structures exhibits density distribution from a surface region of the crystalline material to a defined depth in z-direction of the surface region, to form a thickness of crystalline material to be detached from semiconductor substrate; subjecting crystalline material to a hydrogen plasma species, to occupy at least one worm hole structure in the crystalline material, near an interface between the thickness of crystalline material and a remaining portion of semiconductor substrate, where worm hole structures have respective surface regions; passivating surface regions by subjecting them to hydrogen plasma species including hydrogen particles, to reduce electron-hole recombination process; providing glue layer (103) on surface region of crystalline material; joining surface region of crystalline material via glue layer to a support substrate (101); delaminating a portion of crystalline material from semiconductor substrate, such that a portion of the thickness of crystalline material remains attached to support substrate, to form a textured surface region (107); and forming a cover layer (702) including several light trapping members, on thickness of crystalline material, where light trapping members are shaped in accordance to refractive index of the cover layer. The cover layer comprises dielectric/polymer/glass material. The forming of cover layer on the thickness of crystalline material involves forming wedge facets on top portion of a thickness of cover layer material, via directional etching. The glue layer is selected from spin on glass, eutectic material, polymer or metal layer. INDEPENDENT CLAIMS are included for the following:    (1) a photovoltaic device (100) comprising a support substrate; a thickness of crystalline material having several worm hole structures exhibiting density distribution; a passivation material; a glue layer; a textured surface region on upper surface region of the thickness of crystalline material; and a cover structure including wedge facets;    (2) a partially-processed semiconductor substrate for manufacturing solar cell, comprising a support layer having a thickness of at least 150 microns; a transferring layer on support layer; and photovoltaic material having a thickness of less than fifty microns, on transferring layer; and    (3) a method for manufacturing a solar cell involving providing a substrate including a support region; transferring the photovoltaic material with a thickness of less than 50 microns, on support region of substrate; forming emitter region on photovoltaic material; forming a mask on emitter region; forming first contact region near photovoltaic material; doping first contact region; removing the mask; forming a passivation on first contact region and photovoltaic material; forming anti-reflection coating on the passivation; and forming cover structure including facets, on anti-reflection region.    DESCRIPTION OF DRAWING(S) - The figures show a simplified side-view diagram of a photovoltaic device, and a simplified side-view diagram of a photovoltaic material.    Photovoltaic device (100)    Support substrate (101)    Support surface region (102)    Glue layer (103)    Crystalline material (105)    Textured surface region (107)    Cover layer. (702)