NOVELTY - Curable liquid composition (A), obtained by subjecting a silane compound (I) to a reaction of condensation, or to a reaction of hydrolysis with condensation, in an organic solvent, comprises dispersed fine particles of polyvalent metal oxide having hydroxyl groups.    USE - (A) is useful in semiconductor device (claimed), which is useful as thin-film solar batteries, thin-film transistors of reflection-type liquid crystal displays, thin-film semiconductor devices or elements of thin-film electroluminescent displays and thin-film lithium batteries. (A) is useful to form a hard silica-type layer, which is useful as a substrate for electronic devices. (A) is useful for coating an inorganic substrate by forming a hard silica-type layer.    ADVANTAGE - (A) shows excellent post-preparation storage stability. (A) is curable. (A) can form a uniform and even coating layer, which is free of cracks and tightly adheres to the surface of the substrate. (A) has excellent thermal resistance, frost resistance, electrical insulating properties, mechanical strength and resistance to chemicals.    DETAILED DESCRIPTION - Curable liquid composition (A), obtained by subjecting a silane compound of formula (HnSiX4-n) (I) to a reaction of condensation, or to a reaction of hydrolysis with condensation, in an organic solvent, comprises dispersed fine particles of polyvalent metal oxide having hydroxyl groups.    X = halo or 1-4C alkoxy; and    n = 0-2.    INDEPENDENT CLAIMS are included for:    (1) a method of coating an inorganic substrate comprising coating an inorganic substrate with (A) and subsequently curing curable components of the coating, by a silica-type layer that: contains fine particles of polyvalent metal oxide, and has a pencil hardness in the range of 4-9H is formed on the inorganic substrate;    (2) an inorganic substrate having a silica-type layer; and    (3) a semiconductor device having an inorganic substrate with a silica-type layer, where a semiconductor layer is formed at least on the silica-type layer.    DESCRIPTION OF DRAWING(S) - The figure shows the cross-sectional view of a semiconductor.    Thin silica-type layer (1)    Thin stainless steel plate (2)    Thin semiconductor layer. (4)