NOVELTY - A graphite crucible raw material, coke ground material (100 weight parts) and binder are mixed, volatile material rate is adjusted, molded by rubber-press method, baked at 700-1100 degrees C and graphitized at more than 2800 degrees C without carrying out pitch impregnation and re-carbonization process to obtain graphite crucible. The graphite crucible raw material has bending strength of 40 Mpa or more in 3 point and diameter of average air hole of 3.5-7.5 mu m. The coke ground material has average coefficient of thermal expansion of 4.5-5.4x 10-6/ degrees C at room temperature to 500 degrees C.    USE - Manufacture of graphite crucible used for manufacturing silicon-single crystal for silicon for solar cell.    ADVANTAGE - The method provides graphite crucible having excellent durability.    DETAILED DESCRIPTION - A graphite crucible raw material, coke ground material (100 weight parts) and binder are mixed, volatile material rate is adjusted, molded by rubber-press method, baked at 700-1100 degrees C and graphitized at more than 2800 degrees C without carrying out pitch impregnation and re-carbonization process to obtain graphite crucible. The graphite crucible raw material has bending strength of 40 Mpa or more in 3 point, diameter of average air hole of 3.5-7.5 mu m measured by mercury intrusion technique, gas permeability of nitrogen gas of 1-3.5 centidarcy at normal temperature, plastic yield stress of 4 Mpa or less at 1680 degrees C and curvature accompanying the formation of superficial-carbonization siliconization is 0.4 mm or less. At 1680 degrees C on a high-purity-graphite test sample (50 mm( pi )x 3mm(length)) and quartz glass (50 mm( pi )x 5 mm(length)) is piled up. The coke ground material has average coefficient of thermal expansion of 4.5-5.4x 10-6/ degrees C at room temperature to 500 degrees C.    DESCRIPTION OF DRAWING(S) - The drawing shows image explanatory view of distortion accompanying advance of thickness of silicon carbide layer. (Drawing includes non-English language text).