NOVELTY - The apparatus has a contact connected to an upper absorption layer formed on upper surface of a substrate and a contact connected to a lower absorption layer formed on the bottom of the substrate. The lower, upper and intermediate absorption layers absorb the radiation emitted from a source e.g. sun and converts into electric energy.    USE - Multilayer photovoltaic for use in solar panel (claimed) and generation of electricity. Can also be used for space application, air force space mission application and terrestrial application.    ADVANTAGE - The processing time and manufacturing cost of the solar cell are reduced by using a simple technique.    DETAILED DESCRIPTION - The apparatus has a contact connected to an upper absorption layer formed on upper surface of a substrate and a contact connected to a lower absorption layer formed on the bottom of the substrate. The lower, upper and intermediate absorption layers absorb the radiation emitted from a source e.g. sun and converts into electric energy. The structure of the photovoltaic apparatus is metamorphic, strained, amorphous, crystalline, monocrystalline and pseudomorphic. The band gap of the lower absorption layer is larger than the band gap energy of the intermediate absorption layer and band gap energy of the intermediate absorption layer is larger than the band gap energy of the upper absorption layer. The contacts such as ohmic contacts are formed on the edges of the substrate comprising polycrystalline material, crystalline material, amorphous material, on-axis, off-axis material, few degree off-axis material, doped material, undoped material, semi-insulating material, ion-implanted material and annealed material with background doping, un-intentional doping, surface state, defect, smooth surface, rough surface and multi-layered structure. The substrate is made of germanium, gallium arsenide, zinc selenide, silicon, indium phosphide, gallium indium arsenide, semiconductor, compound semiconductor, metal, alloy or its mixture. A quaternary semiconductor compound or a ternary semiconductor compound is formed as a transition layer. A metal bonding, a heat conductive layer and a conductive epoxy layer are formed on the photovoltaic apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view of the solid phase epitaxy reactor.    Upper graphite block (7)    Lower graphite block (9)    Substrate wafer (13)    Gas outlet (25)    Gas inlet (27)