NOVELTY - A substrate (1) having an indium tin oxide layer (11) and a titanium oxide layer (12), is arranged in a reaction chamber. By vapor deposition, a silicon quantum point nucleation layer, a growth layer, and an inactive activation layer are formed on the titanium dioxide layer. A structure (21) having a growth distribution of silicon quantum points is formed directly, and a silicon carbide quantum point thin film (22) is directly deposited. A silicon quantum point portion fabric layer (2) is formed on the titanium dioxide layer, to obtain a silicon quantum point activated layer.    USE - Used for the production of a silicon quantum point activated layer for solar cells.    ADVANTAGE - The process forms silicon quantum point activated layers which improve the photoelectric-conversion efficiency of solar cells.    DETAILED DESCRIPTION - A substrate (1) is prepared with a laminate of an indium tin oxide layer (11) and a titanium oxide layer (12), and is arranged in a reaction chamber. Silane is used as a precursor and (diluted) argon is used as a carrier gas, inside the reaction chamber. By using vapor deposition and multi-pulse, a silicon quantum point nucleation layer, a growth layer, and an inactive activation layer are formed on the surface of the titanium dioxide layer of the substrate. A structure (21) having growth distribution of silicon quantum points is formed directly, and a silicon carbide quantum point thin film (22) is directly deposited by single pulse in addition to the structure. A silicon quantum point portion fabric layer (2) is formed in the surface of the titanium dioxide layer, to obtain a silicon quantum point activated layer.    DESCRIPTION OF DRAWING(S) - The figure shows the conceptual diagram of the silicon quantum point portion fabric layer.    Substrate (1)    Silicon quantum point portion fabric layer (2)    Indium-tin oxide layer (11)    Titanium-dioxide layer (12)    Silicon quantum point structure (21)    Silicon carbide quantum point thin film (22)