NOVELTY - The method involves: preparing a transparent insulator substrate (12) and a single crystal silicon substrate (11) having a first conductivity type; implanting at least one of hydrogen ions and rare gas ions to the silicon substrate to form an ion implanted layer (14); performing surface activation on at least one of an ion-implanted surface (13) of the silicon substrate and one surface of the insulator substrate; and bonding the ion-implanted surface of the silicon substrate and the insulator substrate with the surface-activated surface set as a bonding surface.    USE - Manufacturing method of single crystal silicon solar cell (claimed).    ADVANTAGE - Enables efficient utilization of silicon as a material for a silicon solar cell, and provides a thin-film single crystal silicon solar cell having high conversion efficiency and less degrading due to irradiation with light as a solar cell having an optical confinement type structure, an efficiency of which is increased as much as possible with respect to a film thickness.    DETAILED DESCRIPTION - The method further involves: applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form the single crystal silicon layer (17); forming diffusion regions having a second conductivity type different from the first conductivity type on the delaminated plane side of the single crystal silicon layer, and forming pn junctions at least in a planar direction and forming first conductivity type regions (21) and second conductivity type regions (22) on the delaminated plane of the single crystal silicon layer; forming first individual electrodes (23) on the first conductivity type regions of the single crystal silicon layer, and forming second individual electrodes (24) on the second conductivity type regions of the single crystal silicon layer; forming first collecting electrodes (25) connecting the first individual electrodes and second collecting electrodes (26) connecting the second individual electrodes; and forming a light reflection film (28) that covers the first conductivity type regions and the second conductivity type regions. An INDEPENDENT CLAIM is also included for a single crystal silicon solar cell.    DESCRIPTION OF DRAWING(S) - The drawing is a process chart showing a method for manufacturing a single crystal silicon solar cell.    Silicon substrate (11)    Insulator substrate (12)    Ion-implanted surface (13)    Ion implanted layer (14)    Single crystal silicon layer (17)    First conductivity type regions (21)    Second conductivity type regions (22)    First individual electrodes (23)    Second individual electrodes (24)    First collecting electrodes (25)    Second collecting electrodes (26)    Light reflection film (28)