TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The contacting and the separating steps are performed simultaneously, by operating them at a temperature above the boiling point of ZnCl2, which evaporates. Before the purification step, the method involves cooling of the Si-bearing metal phase (preferably to a temperature of 420-600degrees C), thus converting at least part of the Si present as a solute in the Si-bearing metal phase that is obtained in the contacting step, to the solid state. The Si present in the solid state is separated, forming the Si-bearing metal phase that is further processed in the purification step. The contacting step is performed by injecting SiHCl3 into a bath comprising molten Zn, at a flow rate adapted to limit the loss of Si by entrainment with evaporating ZnCl2 to less than 15%. The flow rate of SiHCl3 is lower than 0.8 kg/min per m2 of bath surface. The purification step is performed at a temperature above the melting point of Si, thus forming purified liquid Si, and at reduced pressure or under vacuum. The method additionally involves subjecting the separated ZnCl2 to molten salt electrolysis, thus recovering Zn and Cl2; recycling the Zn to the SiHCl3 contacting step; recycling the hydrogen and the Cl2 to a reactor for the production of HCl; hydrochlorination of an impure silicon source with HCl for the production of SiHCl3. The Zn that is vaporized in the purification step, is condensed and recycled to the SiHCl3 contacting step. The fraction of SiHCl3 that exits the contacting step un-reacted, is recycled to the SiHCl3 contacting step. The method involves single solidification step of the purified liquid Si, using a method selected from crystal pulling, directional solidification, and ribbon growth; and granulation of the purified liquid Si. The method involves feeding the granules to a melting furnace; and applying the single solidification step. The solid material is wafered and further processed to solar cells. Preferred Components: The Si-bearing metal phase contains at least part of the Si in the solid state. EXAMPLE - Metallic Zn (7180 g) was heated to 850degrees C in a graphite reactor. The height of the bath was 16 cm and diameter was 9 cm. A Minipuls (RTM: peristaltic pump) was used to introduce trichlorosilane (SiHCl3) in the reactor via a quartz tube. The immersed extremity of the tube was fitted with a porous plug made of quartz. The SiHCl3, vaporises in the immersed section of the tube and was dispersed as a gas in the liquid Zn. The SiHCl3 flow rate was ca. 250 g/hours, and the total amount added was 3400 g. The flow rate corresponds to 0.66 kg/min per m2 of bath surface. The ZnCl2, that evaporated during the reaction, condensed in a graphite tube connected to the reactor and was collected in a separate vessel. Any un-reacted SiHCl3 was collected in a wet scrubber connected to the ZnCl2 vessel. A Zn-Si alloy, saturated in Si at the prevalent reactor temperature and containing additional solid particles of Si, was obtained. The total Si content of the mixture was 11%. It was sufficient to increase the amount of SiHCl3 added, at the same flow rate of 250 g/hour, to increase the amount of solid Si in the Zn-Si alloy. This Zn-Si alloy containing solid Si was heated to 1500degrees C to evaporate the Zn, which was condensed and recovered. The Si was then allowed to cool down to room temperature, and Si (627 g, yield 89%) was recovered.