NOVELTY - The apparatus has a feeding point (20b) set at a distance from another feeding point (20a) provided at the edge of electrode, such that distance between the feeding points is one-half of the wavelength of electric waves propagated to feeding point. A high-frequency electric power supply unit generates standing wave such that belly position of standing wave corresponds to the position of the feeding points.    USE - High-frequency plasma chemical vapor deposition apparatus e.g. very high frequency (VHF) plasma CVD apparatus for forming thin semiconductor film (claimed) for manufacture of tandem-type thin film silicon solar cell (claimed).    ADVANTAGE - The influence of the standing wave and generation of toxic plasma are suppressed during formation of semiconductor film. The manufacturing cost of plasma CVD apparatus is reduced.    DETAILED DESCRIPTION - The apparatus has source gas supply system to supply source gas in vacuum vessel (1) having substrate (11) and electrodes. Two power amplifiers (29a,29b) amplify the output of two signal couplers that couple the output signals of two high-frequency transmitters. Two adjustment devices adjust the output of amplifiers. Two coaxial cables (30a,30b) transmit the output of adjustment devices to electrode having a feeding point set at its edge such that distance between the two feeding points is one-half of the wavelength of electric waves propagated to feeding point. Two balanced-to-unbalanced converters convert electric power transmission circuit from unbalance transmission system to balanced transmission system, while transmitting output of adjustment devices to electrodes. A high-frequency electric power supply unit generates standing wave such that belly position of standing wave corresponds to the position of the feeding points. INDEPENDENT CLAIMS are included for the following:    (1) thin semiconductor film manufacturing method which involves using high-frequency plasma chemical vapor deposition (CVD) apparatus for forming thin semiconductor film for solar cell manufacture; and    (2) high-frequency plasma CVD method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of plasma CVD apparatus.    Vacuum vessel (1)    Insulator support (5)    Exhaust pipes (9a,9b)    Substrate (11)    Feeding points (20a,20b)    Power amplifiers (29a,29b)    Coaxial cables (30a,30b)