NOVELTY - A porous membrane (1930) disposed between conductive plates (1910,1920) has pores extending through the porous membrane from a first side to a second side of the porous membrane. Conductive rods (1940,1950) are disposed inside the pores to be in contact with either conductive plate.    USE - Nano-scale digitated capacitor for use as, e.g., automotive battery replacement, back-up storage for solar cells or fuel cells, bypass capacitors for attenuating perturbations in electronic circuits and devices.    ADVANTAGE - Achieves increased role of transition zones near interfaces between different materials due to large increase in interfacial area to volume ratio, thus increasing polarization and effective permittivity which yields unexpected capacitance. New material properties, e.g., dielectric behavior, due to imposition of geometric arrangements in small structures, such as high curvature of bonded neighbors further increases effective permittivity and capacitance. Mechanical flexibility of materials allows high tolerance of bending forces and thermal cycling. Wide range of materials allows for optimization of design or development of designs to meet specific performance metrics such as low cost, high reliability, low volume, low weight, thin structures, high flexibility, and high energy density per volume or per weight. Wide range of available materials allows for selection of materials with minimal thermal mismatch, which is important for reliability in temperature cycling. Fabrication is low cost and is based on special deposition processes that are well controlled, suitable for precise fabrication of designed and optimized structures, and insensitive to common contaminants, thus eliminating need for expensive clean room facilities. Equipment used in fabrication is inexpensive since processes are based on self assembly and natural phenomena creating nano-structures, thus allowing complex structures to be built at low cost of production. Fabrication processes allow minimal waste of materials and the order of magnitude of toxic waste is smaller than in typical semiconductor fabrication. Enables vertical integration of structures which yields high surface areas of metal/dielectric interfaces. Vertical integration and precise deposition with efficient use of materials permits optimization of energy density per volume or energy density per weight, which are important performance metrics in many portable applications.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a method of forming a capacitor;    (2) a charge supply device;    (3) an interdigitated energy storage device;    (4) a method of forming an interdigitated energy storage device; and    (5) a method of forming a vertically integrated charge storage device.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the nano-scale interdigitated capacitor.    Nano-scale interdigitated capacitor (1900)    Plates (1910,1920)    Porous membrane (1930)    Conductive rods (1940,1950)    Pore openings (1960,1970)