NOVELTY - A solar cell has a p-n junction structure; an anti-reflection layer (205); a backside reflection layer having a backside passivation layer (208) containing hafnium silicates, zirconium silicates or silicon dioxide, and a reflection film (207) containing hafnium oxide or zirconium dioxide; a front electrode (203) connected to a second conductive silicon layer (202) of the junction structure through the anti-reflection layer; and a rear electrode (204) connected to a first conductive silicon layer (201) of the junction structure through the reflection film and the backside passivation layer.    USE - A solar cell.    ADVANTAGE - The solar cell exhibits excellent optical trapping and low recombination rate of carriers on the rear side. In addition, since the reflection film and the backside passivation layer have excellent thermal stability, the solar cell is possible to form electrodes by applying various processes, e.g. thermal treatment.    DETAILED DESCRIPTION - A solar cell comprises:    (1) a p-n junction structure having a first conductive silicon layer (201), a second conductive silicon layer (202) positioned on the first conductive silicon layer and having a conduction opposite to the first conductive silicon layer, and a p-n junction formed at an interface between the first and second conductive silicon layers;    (2) an anti-reflection layer (205) formed on the second conductive silicon layer;    (3) a backside reflection layer positioned on the first conductive silicon layer, and having a backside passivation layer (208) containing hafnium silicates (HfSixOy), zirconium silicates (ZrSixOy) or silicon dioxide (SiO2) and a reflection film (207) containing hafnium oxide (HfO2) or zirconium dioxide (ZrO2);    (4) a front electrode (203) connected to the second conductive silicon layer through the anti-reflection layer; and    (5) a rear electrode (204) connected to the first conductive silicon layer through the reflection film and the backside passivation layer.    The backside reflection layer is formed by depositing HfO2-x or ZrO2-x onto the first conductive silicon layer by chemical vapor deposition (CVD) or plasma enhanced CVD; and then executing a post thermal oxygen (O2) annealing process to the first conductive silicon layer. The post thermal O2 annealing process is executed by wet oxidation, or rapid thermal oxidation. The first conductive silicon layer is a p-type silicon layer. The second conductive silicon layer is an n-type emitter layer.    x, y=not defined.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic view of the solar cells.    First conductive silicon layer (201)    Second conductive silicon layer (202)    Front electrode (203)    Rear electrode (204)    Anti-reflection layer (205)    Reflection film (207)    Backside passivation layer (208)