TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The composition (C2) includes the organic semiconductor composition (0.1-10 wt.%) and organic solvent (90-99.9 wt.% ). The organic semiconductor thin film is formed using a coating process selected from spin coating, dip coating, roll coating, screen coating, spray coating, spin casting, flow coating, screen printing, ink jetting, or drop casting.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent includes alcohols, including methylalcohol, ethylalcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, t-butyl alcohol, isobutyl alcohol, and diacetone alcohol, ketones, including acetone, methylethylketone, and methylisobutylketone, glycols, including ethyleneglycol, diethyleneglycol, triethyleneglycol, propyleneglycol, butyleneglycol, hexyleneglycol, 1,3-propanediol, 1,4-butanediol, 1,2,4-butanetriol, 1,5-pentanediol, 1,2-hexanediol, and 1,6-hexanediol, glycol ethers, including ethyleneglycol monomethyl ether and triethyleneglycol monoethyl ether, glycol ether acetates, including propyleneglycol monomethyl ether acetate (PGMEA), acetates, including ethyl acetate, butoxyethoxy ethyl acetate, butyl carbitol acetate (BCA) and dihydroterpineol acetate (DHTA), terpineols, trimethyl pentanediol monoisobutyrate (TEXANOL), dichloroethene (DCE), chlorobenzene or N-methyl-2-pyrrolidone (NMP).    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer compound has a weight average molecular weight of 100-1000000. The oligomer compound has a weight average molecular weight of 50-1000. The polymer compound is a pi -conjugated copolymer is selected from polypyrrole, polythiophene, polyselenophene, polyisothianaphthene, poly(arylene vinylene), polyaniline, polyazulene, polypyrene, polycarbazole, polyfuran, polyphenylene, polyindole, polypyridazine, polyacene or their derivatives. The polymer compound and the oligomer compound have a molar ratio of 1000:1-1:1000. Preferred Definitions:    A and B1=(hetero)aryl group is selected from group of 44 compounds as given in the specification e.g. thiophene, selenophene, furan, pyrido(3,4-d)pyrimidine, thiazole.    EXAMPLE - A poly(oligothiophene-thiozole) derivative (molecular weight (MW) 40000, polymerization degree 20) was dissolved to a concentration of about 1 wt % in chlorobenzene, and was then mixed with an oligomer compound (MW about 8000, polymerization degree 4) of the above material at a molar ratio of 100:1, to form a composition for patterning a semiconductor layer. On a washed plastic substrate, chromium for a gate electrode was formed to a thickness of 1000 Angstrom , after which silica SiO2 for a gate insulating layer was deposited on the gate electrode to a thickness of 1000 Angstrom . Thereafter, indium tin oxide (ITO) for source/drain electrodes was deposited on the gate insulating layer to a thickness of about 1200 Angstrom . Before deposition of the organic semiconductor material, the substrate washed with isopropylalcohol for 10 minutes and dried. The sample was immersed in octadecyltrichlorosilane solution (10 nm) diluted with hexane for 30 second, washed with acetone, and dried, after which the composition was applied on it to a thickness of 800 Angstrom through spin coating at about 1000 rpm and then baked at about 100 degrees C for about 1 hour in an argon atmosphere to thus form a semiconductor layer, thereby manufacturing the bottom contact type organic thin film transistors (OTFT)(test). An OTFT (comparative) was manufactured in the same manner, with the exception that only the polymer material was used as material for patterning a semiconductor layer. In the test/comparative OTFTs manufactured using the organic semiconductor composition, the charge mobility was 0.005/0.003 respectively. Thus the test OTFT had improved electrical properties.