NOVELTY - The process for treating continuous electroconductive thin layer deposited on a first face of a substrate such as silico-sodo-calcic glass, comprises altering each point of the thin layer to a temperature of greater than or equal to 300 degrees C for 0.5 seconds, and increasing a crystallization rate of the thin layer to greater than or equal to 50% by maintaining a temperature of less than or equal to 50 degrees C at any point on the face of the substrate opposed to the first face and without melting of the thin layer. The substrate has a dimension of greater than or equal to 2 m. The thin layer is heated by induction and projection technique using plasma torch.    USE - The process is useful for treating continuous electroconductive thin layer deposited on a first face of a substrate such as silico-sodo-calcic glass, where the substrate and treated thin layer are useful in a susceptible material, which is useful in simple or multiple laminated glazings, mirrors, glass wall linings, photovoltaic glazings, solar panels, display screens of LCD and field emission display or electrochromic glazings (all claimed).    ADVANTAGE - The process is capable of easily, rapidly and simultaneously or sequentially treating the electroconductive thin layer deposited on a first face of a substrate such as silico-sodo-calcic glass, maintains the substrate at a constant temperature during the heat treatment thus preventing the substrate from breakage, and provides the thin layer with improved electrical conductivity and low-emissivity properties.    DETAILED DESCRIPTION - The process for treating continuous electroconductive thin layer deposited on a first face of a substrate such as silico-sodo-calcic glass, comprises altering each point of the thin layer to a temperature of greater than or equal to 300 degrees C for 0.5 seconds, and increasing a crystallization rate of the thin layer to greater than or equal to 50% by maintaining a temperature of less than or equal to 50 degrees C at any point on the face of the substrate opposed to the first face and without melting of the thin layer. The substrate has a dimension of greater than or equal to 2 m. The thin layer is heated by: induction; a projection technique using plasma torch; subjecting the thin layer to flame; and contacting with a hot solid and with radiation of which the wave length is comprised in a part of an infrared radiation absorbed by the layer. The thin layer is altered to a temperature of 300-800 degrees C, when it is based on anatase form titanium oxide. The thin layer is altered to a temperature of 350-550 degrees C, when it is based on silver. INDEPENDENT CLAIMS are included for:    (1) a process to obtain a material comprising a substrate and a thin layer; and    (2) a susceptible material.