NOVELTY - Growing an N-face group III nitride film, involves providing a substrate having a growth surface with a misorientation angle of 0.5-10degrees relative to a miller indexed crystallographic plane (h, i, k, l) of the substrate, where h, i, k, l are miller indices; and growing the N-face group III-nitride film on the growth surface. The N-face group III-nitride film is smoother than an N-face group III-nitride film grown on a substrate without a misorientation angle.    USE - For growing N-face group III nitride film useful for fabricating a device (claimed) such as transistor, solar cells, devices utilizing tunnel junctions, LEDs, and electronics and optoelectronic nitride devices such as N-face transistors (HEMTs); for hetero-epitaxial growth of high quality, nitrogen (N) face gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), and their alloys.    ADVANTAGE - Use of misoriented substrate and possibly nitridizing the substrate allows growth of smooth N-face gallium nitride and other group III nitride films. The method avoids the typical large (mu m sized) hexagonal features, which make N-face gallium nitride material unacceptable for device applications. The method allows growth of smooth, high quality films, which makes the development of N-face device possible. The method allow polarization-based band structure designs to create more efficient LEDs and LDs. The reverse polarization fields in N-polar hetero-structures, in comparison to Ga-polar hetero-structures, result in lower operating voltages, shrink the width of the depletion region of the p-n-junction, and improve carrier injection, leading to advances in device performance. Deposition on N-polar surfaces enables the growth of InGaN with higher compositions of Indium compared to Ga-polar surfaces, easing the push of LED wavelengths into the yellow and red portions of the color spectrum. The method enables the use of higher p-type doping levels in GaN based devices, leading to improved device performance. The method results in narrower width of depletion region of the p-n-junction and improved carrier injection leading to advances in the device performance. The method eliminates annealing step of the substrate. The graded or stepped AlGaN layer can be eliminated and be replaced by any (Al,Ga,In)N layer of any composition if grows in a step-flow-growth-mode or layer-by-layer-growth-mode. Since the growth is now performed on the N-face the film quality can be maintained at higher levels of p-type doping which will lead to a much better device performance. The etching properties of N-face are distinctly different from that of Ga-face which will be useful in creating better light extraction schemes in LEDs, such as surface roughening, and mega-cones, as well as etched facets for LDs. The N-polar devices grown on misoriented substrates make use of enhanced charge (e.g electron and/or hole) transport properties in a specific direction related to the misorientation direction through appropriate alignment of the device channel with respect to the misorientation direction. Thus, the channel of a transistor or charge transport channel of any device can be created such that the orientation of the channel and the enhanced charge transport properties are both used to create the desired charge transport for a given device.    DETAILED DESCRIPTION - Growing an N-face group III nitride film, involves providing a substrate having a growth surface with a misorientation angle of 0.5-10degrees relative to a miller indexed crystallographic plane (h, i, k, l) of the substrate, where h, i, k, l are miller indices; and growing the N-face group III-nitride film on the growth surface. The N-face group III-nitride film is smoother than an N-face group III-nitride film grown on a substrate without a misorientation angle. The N-face group III-nitride film is grown using metal organic chemical vapor deposition (MOCVD) on a nitridized misoriented substrate. The method further involves forming an aluminum nitride (AlN) layer on the misoriented substrate; growing the N-face group III-nitride film on the AlN layer; depositing a group III-nitride nucleation layer on an AlN layer formed on the sapphire substrate due to the nitridization; and growing the N-face group III-nitride film on the group III-nitride nucleation layer. The AlN layer sets an N-polarity for subsequently deposited group III-nitride layers. The N-face group III-nitride film is grown by doping and growing, on the nucleation layer, a first N-face group III nitride layer; and growing a second N-face group III-nitride layer on the first N-face group-III layer so that at least part of the second N-face group III-nitride layer is doped. The misoriented substrate is a polished Carbon Polar Silicon Carbide substrate. An INDEPENDENT CLAIM is included for enhancing charge transport properties of a nitride device, involving fabricating the nitride device using N-face nitride layers grown on a substrate having a growth surface with a misorientation angle of 0.5-10degrees relative to a miller indexed crystallographic plane of the substrate; and aligning a channel of the nitride device perpendicular to a misorientation direction of the misoriented N-face aluminum nitride/gallium nitride/indium nitride (Al,Ga,In)N layer grown on a misoriented substrate, where charge transport properties are enhanced in the misorientation direction.    DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of process for the growth of sapphire.