NOVELTY - Preparation of dye-sensitized solar cell titanium oxide membrane comprises magnetron sputtering high-purity titanium target, where argon and oxygen are used as electricity-discharging gases with purities more than 99.9%. The deposited base body is current-conducting glass or flexible current-conducting base body including polyimide membrane and polyethylene glycol terephthalate membrane. The separation angle between sample surface and target surface normal is adjusted to 30-90 degrees and horizontal magnetic field intensity of sputtering zone on target surface is 200-400 G.    USE - Method for preparing dye-sensitized solar cell titanium oxide membrane (claimed).    ADVANTAGE - The method enables to provide porous structure by controlling deposition speed rate and separation angle between basal body and target surface.    DETAILED DESCRIPTION - Preparation of dye-sensitized solar cell titanium oxide membrane comprises magnetron sputtering high-purity titanium target, where argon and oxygen are used as electricity-discharging gases with purities more than 99.9%. The deposited base body is current-conducting glass or flexible current-conducting base body including polyimide membrane and polyethylene glycol terephthalate membrane. The separation angle between sample surface and target surface normal is adjusted to 30-90 degrees and horizontal magnetic field intensity of sputtering zone on target surface is 200-400 G. The background of deposition system is higher than 1x 103 and titanium target is treated by sputtering cleaning before deposition so as to eliminate impurity on target surface. The intermediate frequency or radio frequency reaction magnetron sputtering method is used for depositing titanium dioxide membrane on basal material. Flow ratio between argon and oxygen is adjusted to 1:5-1:1 and the total gas pressure is adjusted to 0.3-5 Pa. The source power density is 1-3 W/cm2 with intermediate frequency power of 40 KHz and radio frequency power of 13.56 MHz. The negative bias added on substrate is 0-100 V. The natural lifting temperature of substrate is lower than 120 degrees C.