EP1962339-A1  E. YABLONOVITCH ET AL.: 'Usually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces' PHYSICAL REVIEW LETTER vol. 57, 1986, page 249;  SUGIMOTO ET AL.: 'MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING', vol. 9, 01 February 2006, ELSEVIER SCIENCE PUBLISHERS B.V. article 'Photoluminescence analysis of intra-grain defects in cast- grown polycrystalline silicon wafers', pages 102 - 106;  SUGIMOTO H ET AL.: 'Analysis of intra-grain defects in multicrystalline silicon wafers by photoluminescence mapping and spectroscopy' JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS) JAPAN SOC. APPL. PHYS vol. 45, no. 24-28, July 2006,;  T. TRUPKE ET AL.: 'Photoluminescence imaging of silicon wafers' APPLIED PHYSICS LETTERS vol. 89, 2006, page 044107;  TRUPKE T ET AL.: 'APPLIED PHYSICS LETTERS, AIP', vol. 89, 26 July 2006, AMERICAN INSTITUTE OF PHYSICS article 'Photoluminescence imaging of silicon wafer', pages 44107 - 044107;  SUGIMOTO ET AL: "Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers" MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCIENCE PUBLISHERS B.V., BARKING, UK, vol. 9, no. 1-3, 1 February 2006 (2006-02-01), pages 102-106, XP005607891 ISSN: 1369-8001;  SUGIMOTO H ET AL: "Analysis of intra-grain defects in multicrystalline silicon wafers by photoluminescence mapping and spectroscopy" JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS) JAPAN SOC. APPL. PHYS JAPAN, vol. 45, no. 24-28, July 2006 (2006-07), pages L641-L643, XP002479524 ISSN: 0021-4922;  TRUPKE T ET AL: "Photoluminescence imaging of silicon wafers" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 89, no. 4, 26 July 2006 (2006-07-26), pages 44107-044107, XP012088201 ISSN: 0003-6951;  SUGIMOTO H ET AL: "Photoluminescence imaging of multicrystalline Si wafers during HF etching" JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS) JAPAN SOCIETY OF APPLIED PHYSICS THROUGH THE INSTITUTE OF PURE AND APPLIED PHYSICS JAPAN, vol. 46, no. 12-16, April 2007 (2007-04), pages L339-L341, XP002479525 ISSN: 0021-4922EP1962339-B1  SUGIMOTO ET AL: "Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers" MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCIENCE PUBLISHERS B.V., BARKING, UK, vol. 9, no. 1-3, 1 February 2006 (2006-02-01), pages 102-106, XP005607891 ISSN: 1369-8001;  SUGIMOTO H ET AL: "Analysis of intra-grain defects in multicrystalline silicon wafers by photoluminescence mapping and spectroscopy" JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS) JAPAN SOC. APPL. PHYS JAPAN, vol. 45, no. 24-28, July 2006 (2006-07), pages L641-L643, XP002479524 ISSN: 0021-4922;  TRUPKE T ET AL: "Photoluminescence imaging of silicon wafers" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 89, no. 4, 26 July 2006 (2006-07-26), pages 44107-044107, XP012088201 ISSN: 0003-6951;  SUGIMOTO H ET AL: "Photoluminescence imaging of multicrystalline Si wafers during HF etching" JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS) JAPAN SOCIETY OF APPLIED PHYSICS THROUGH THE INSTITUTE OF PURE AND APPLIED PHYSICS JAPAN, vol. 46, no. 12-16, April 2007 (2007-04), pages L339-L341, XP002479525 ISSN: 0021-4922