NOVELTY - The method for fabricating a silicon solar cell structure useful in solar cell modules, comprises forming a n+ layer on a top-side of a gallium doped p-silicon substrate (114), forming a silicon nitride anti-reflective (AR) layer (106) on the top-side of the n+ layer, forming silver contacts on the AR layer using a screen-printing technique, forming an aluminum contact layer (108) on a back-side of the gallium doped p-silicon substrate using the screen-printing technique, and co-firing the gallium doped p-silicon substrate.    USE - The method is useful for fabricating a silicon solar cell structure useful in solar cell modules, which is useful for orbiting space satellites, remoting telecommunication repeaters, fiber optic amplifiers, remoting street signs, telephone booths, outdoor lighting, homes, businesses and/or utility scale power generation.    ADVANTAGE - The method ensures effective and economical fabrication of the silicon solar cell structure with good quality, long lifetime and high efficiency in faster manner.    DETAILED DESCRIPTION - The method for fabricating a silicon solar cell structure useful in solar cell modules, comprises forming a n+ layer on a top-side of a gallium doped p-silicon substrate (114), forming a silicon nitride anti-reflective (AR) layer (106) on the top-side of the n+ layer, forming silver contacts on the AR layer using a screen-printing technique, forming an aluminum contact layer (108) on a back-side of the gallium doped p-silicon substrate using the screen-printing technique, co-firing the gallium doped p-silicon substrate having the n+ layer, silicon nitride AR layer, silver metal contacts and aluminum contact layer, and forming a co-fired silicon solar cell structure (100a). The silver contacts are electrically communicated with the n+ layer so that an aluminum back surface field layer (BSF) (112) is formed. The silicon solar cell has a fill factor of 0.75-0.85, a Voc of 550-650 mV and a Jsc of 28-36 mA/cm2. The co-firing process includes heating the belt furnace at a rate of 50-100 degrees C/second to a temperature of 700-900 degrees C, holding the temperature in the belt furnace at 700-900 degrees C for 1-5 seconds, and reducing the temperature in the belt furnace at a rate of 50-100 degrees C/second.    DESCRIPTION OF DRAWING(S) - The diagram shows a silicon solar cell structure.    Co-fired silicon solar cell structure (100a)    Silicon nitride anti-reflective layer (106)    Aluminum contact layer (108)    Aluminum back-surface field layer (112)    Gallium doped p-silicon substrate. (114)