TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The organic film in cathode base material is coated with metal-oxide film on the surface layer. The metallic compound in metal-oxide film generates hydroxyl group by hydrolysis and is formed from silica-type film forming material containing solvent which does not have functional group. The material containing solvent is dissolved and reacted with metallic compound. The organic film is photoresist film or photoresist pattern which is patternized by predetermined shape by exposing the pattern. The photoresist film is formed by positive photoresist composition, radical polymerization initiator and negative photoresist compostion containing polyfuntional epoxy resin. The positive photoresist composition contains acid generator component which generates acid by exposing the film to actinic light or radiation exposure, compound of formula (1) containing qinonediazide group which is an esterifying-reaction product of the residue of compound of (1) and 1,2-naphthoquinone diazide sulfonyl compound, and alkali-soluble resin. Alternately, the cathode base material has metal film formed on support provided with composite film formed by composite-film forming material containing organic component and inorganic component. The composite film is patternization composite film patternized by predetermined shape with respect to pattern exposure. The secondary battery comprises cathode base material, electrolytic solution and anode base material which occludes and discharges electrolytic solution.Q1=H, 1-6C alkyl or of formula (2);R1-R8,R12,R13=H, halogen, 1-6C alkyl, 1-6C alkoxy or 3-6C cycloalkyl;R9-R11=H or 1-6C alkyl;a,y,x=1-3;andd,n=0-3.When Q1 bonds with R9, Q1 is 3-6C cycloalkylene chain with carbon atom between R9 and Q1. Preferred Properties: The solubility of resin component with respect to alkali is improved by acid. The composite film has photosensitivity. The photoresist pattern has aspect-ratio of 0.1 or more. Preferred Compounds: The metallic compound is silicon compound having isocyanate group and/or halogen atoms. The alkali-soluble resin is chosen from novolak resin, hydroxy styrene resin and acrylic resin. The inorganic component is glass powder. The organic component is water soluble cellulose derivative, photopolymerizable monomer, photoinitiator and acrylic resin having hydroxyl group. The coating liquid of silica-type film is composition of silica-type film containing siloxane polymer and solvent. The siloxane polymer is a reaction product obtained by hydrolysis of silane compound of formula: (R4)nSi(OR')n. The silane compound consists of methyl trialkoxy silane and tetraalkoxy silane. The solvent of formula (4) in the metallic compound is p-methane.R21-R23=H or alkyl group which forms a ring when bonded with carbon atoms in cyclohexane ring R'=alkyl or phenyl group;R4=H, alkyl or phenyl group;andn=2-4.Preferred Process: The metal film is metal film formed of plating process. The plating process is a multistep plating process chosen from non-electrolytic copper plating process, electroless-nickel-plating process, non-electrolytic tinning process and electrolysis tinning process. The composite film is formed on support and plating a metal film on composite film. The metal-oxide film is formed on organic film before plating the metal film. The photoresist pattern is formed on support. The silica-type film is formed on photoresist pattern and the pattern is removed. EXAMPLE - Polyfunctional bisphenol A novolak-type epoxy resin (in mass parts) (100), UVI-6992 (RTM: mixture of diphenyl(4-(phenylthio)phenyl)sulfonium hexafluoro phosphate and thiodip-phenylene bis(di-phenyl-sulfonium)bis (hexafluorophosphate)) (5), 1,5-dihydroxy naphthalene (5) and ( gamma )-butryolactone are mixed, to obtain negative photoresist composition. The obtained composition is coated on silicon wafer and dried, to obtain photosensitive resin composition layer having thickness of 20 mu m. The layer was prebaked at 90 degrees C for 5 minutes and heated at 60 degrees C for 5 minutes. The layer was subjected to pattern exposure and immersed in propylene glycol methyl ether acetate for 4 minutes. Then the substrate was baked at 200 degrees C for 1 hour, to obtain photoresist pattern of width 10 mu m. The resin of formula (I) (40), compound of formula (II) (1), novalk resin (60) and 1,5-dihydroxy naphthalene (1) were dissolved in propylene glycol monomethyl-ether acetate and subjected to condensation reaction, to obtain positive photoresist composition. The obtain composition forms photoresist pattern on silicon wafer. Salicyl aldehyde and formaldehyde were mixed in molar ratio 1:5, m-cresol, p-cresol and 2,3,5-trimethyl phenol were mixed in molar ratio of 40:35:25 and novolak resin (13 g) having molecular weight of 5200, 1,2-naphthoquinone diazide-5-sulfonyl chloride, bis(2,4-dihydroxy phenyl)methane and bis(4-hydroxy 2,3,5-trimethyl phenyl)-2-hydroxyphenyl methane were mixed in mass ratio of 4:1:1, and bis(2-methyl-4-hydroxyphenyl)-phenylmethane (5.5 g) and glycol monomethyl-ether acetate solvent were mixed, to obtain positive photoresist composition. The obtained composition was coated on silicon wafer and prebaked, to obtain organic film with thickness of 1.48 mu m. The film was subjected to selective exposure and patternization to obtain patternization organic film. The film and pattern were immersed in sodium-phosphate solution. The silicon wafer was subjected to cleaning process using tin-chloride aqueous solution and palladium chloride aqueous solution. The obtained silicon wafer was subjected to nickel-plating process at 70 degrees C by immersing in nickel melt containing complex agent of nickel sulfate, sodium-hypophosphite, lead ion and carboxylic acid. Then the wafer was subjected to electroless-nickel plating and tinning process at 70 degrees C by immersing in nickel melt containing reducing agent, titanium trichloride, sodium citrate and tin chloride, to obtain cathode base material. The non-aqueous-electrolyte secondary battery was obtained using cathode base material.