NOVELTY - The first photoactive layer comprising an organic electron donor material and an organic electron acceptor material, is disposed on a substrate. The second photoactive layer comprising an inorganic semiconductor material is disposed on the first photoactive layer. The first and second photoactive layers are disposed between two electrodes to form a photovoltaic system. The first and/or second photoactive layers are disposed through first liquid-based coating process.    USE - For manufacturing photovoltaic system used for transferring electricity.    ADVANTAGE - The photovoltaic system is manufactured effectively.    DETAILED DESCRIPTION - The polymer is chosen from polythiophene, polyaniline, polyvinylcarbazole, polyphenylene, polyphenylvinylene, polysilane, polythienylenevinylene, polyisothianaphthanene, polycyclopentadithiophene, polysilacyclopentadithiophene, polycyclopentadithiazole, polythiazolothiazole, polythiazole, polybenzothiadiazole, poly(thiophene oxide), poly(cyclopentadithiophene oxide), polythiadiazoloquinoxaline, polybenzoisothiazole, polybenzothiazole, polythienothiophene, poly(thienothiophene oxide), polydithienothiophene, poly(dithienothiophene oxide), polytetrahydroisoindole, and their copolymer. The organic electron donor material comprises a polymer chosen from poly(3-hexylthiophene) or poly(cyclopentadithiophene-co-benzothiadiazole), polythiophene, polycyclopentadithiophene, and their copolymer. The organic electron acceptor material comprises a material chosen from fullerene, oxadiazole, carbon nanorod, polymer containing cyano group, polymer containing trifluoromethyl group, and their combination. The organic electron acceptor material comprises a substituted fullerene comprising 61C-phenyl-butyric acid methyl ester (PCBM).The inorganic semiconductor material comprises inorganic nanoparticles, amorphous silicon, crystalline silicon, cadmium selenide, cadmium telluride, gallium arsenide, copper indium selenide, copper indium gallium selenide, or metal oxide. The photovoltaic system has recombination layer containing p-type semiconductor material and n-type semiconductor material. The p-type semiconductor material comprises p-doped metal oxide, poly(3,4-ethylene dioxythiophene) and metal oxide chosen from copper oxide, strontium copper oxide, strontium titanium oxide, and their combination. The p-doped metal oxide comprises a p-doped zinc oxide or a p-doped titanium oxide. The n-type semiconductor material comprises a metal oxide titanium oxide, zinc oxide, tungsten oxide, molybdenum oxide, and their combination.    DESCRIPTION OF DRAWING(S) - The figure shows the cross-sectional view of the tandem photovoltaic cell.    Tandem photovoltaic cell (100)    Semi cell (102,104)    Cathode (110)    Hole carrier layer (120)    Photoactive layer (130)    Intermediate layer (150)