NOVELTY - The fine-crystal silicone photoelectric-converting layer (4) is formed on a substrate using photoelectric-conversion apparatus by film forming condition setting method. The Raman peak ratio (A) of substrate is measured by irradiating light on side portion of substrate. The Raman peak ratio (A) that is the ratio of peak intensity (1c) (1) of crystalline-silicon phase with respect to peak intensity (1a) (1) of amorphous-silicon phase in Raman spectrum (I) are calculated.    USE - Film forming condition setting for solar cells used for electric power generation.    ADVANTAGE - The film forming condition setting for photoelectric converter having high conversion efficiency, and stably manufactured.    DETAILED DESCRIPTION - The fine-crystal silicone photoelectric-converting layer (4) is formed on a substrate using photoelectric-conversion apparatus by film forming condition setting method. The Raman peak ratio (A) of substrate is measured by irradiating light on side portion of substrate. The Raman peak ratio (A) that is the ratio of peak intensity (1c) (1) of crystalline-silicon phase with respect to peak intensity (1a) (1) of amorphous-silicon phase in Raman spectrum (I) are calculated. The Raman peak ratio (B) of substrate is measured by irradiating light on reverse portion of substrate. The Raman peak ratio (B) that is the ratio of peak intensity (1c) (2) of crystalline-silicon phase with respect to peak intensity (1a) (2) of amorphous-silicon phase in Raman spectrum (II) are calculated. INDEPENDENT CLAIMS are included for the following:    (1) manufacturing of photoelectric conversion apparatus; and    (2) testing inspection method of photoelectric-conversion apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of calculating method of Raman peak ratio (A) and Raman peak ratio (B). (Drawing includes non-English language text)    Transparent insulated substrate (1)    Transparent electroconductive film (2)    Fine-crystal silicone photoelectric-converting layer (4)