NOVELTY - Fabricating devices having crystalline material involves providing an eddy current inductively coupled linear plasma source (10) having a width and a length, where the length is greater than the width; providing at least one reactive gases to process chamber (9); generating a pure inductively coupled plasma with the plasma source; and translating a substrate beneath the plasma source using process conditions for producing the material with crystalline content.    USE - For fabricating devices such as solar cell devices or flat panel display devices (claimed), and optical devices, electronic devices, optoelectronic devices, and energy conversion devices including photovoltaic cells and photoelectrochemical cells.    ADVANTAGE - The method has none of the prior art limitations (including low film growth rates, lack of uniformity over large areas, powder formation, need for large gas flows and high temperatures) which inhibit commercial production of microcrystalline films, while simultaneously providing the desired plasma conditions of high plasma density, high hydrogen dissociation (for silicon deposition), and low ion bombardment. This has led to high growth rate of microcrystalline silicon without the typical limitations for commercialization.    DETAILED DESCRIPTION - Fabricating devices having crystalline material involves providing an eddy current inductively coupled linear plasma source (10) having a width and a length, where the length is greater than the width; providing at least one reactive gases to process chamber (9); generating a pure inductively coupled plasma with the plasma source; and translating a substrate beneath the plasma source using process conditions for producing the material with crystalline content. The method also involves flowing a gas through the plasma source. The generating step involves use of the eddy currents to couple power into the plasma at a pressure 0.5-50 mTorr and radiofrequency (RF) power of 20-60 Watts/cm of plasma source length. The translating step involves translating substrate at less than 250 degrees C beneath the plasma source so as to deposit the crystalline material at a rate greater than 5 Angstrom (0.5 nm) per second. The plasma source has a substantially conductive body comprising at least one conductive segments interrupted by at least one dielectric break; a current carrier adjacent to the substantially conductive body; a power supply that furnishes alternating current power to the current carrier, the current carrier inducing eddy currents within the conductive segments; a process chamber attached to the conductive body so as to allow transport of chemical species from the conductive body to the process chamber.    DESCRIPTION OF DRAWING(S) - The figure shows front view of a system including a port for transporting a substrate in or out of process chamber.    System (8)    Process chamber (9)    Plasma source (10)    Plasma discharge chamber (16)    Port. (30)