NOVELTY - The method for producing crystallized silicon according to an edge-defined film-fed growth process by using molding parts for the production of solar cells, comprises forming a silicon melt (44) of the crystallized silicon between the molding parts in a drawing zone, supplying an inert gas and further fluid to the silicon melt and/or to the drawing zone, increasing the oxygen content in the crystallized silicon by the inert gas and the further fluid and mixing 50-250 ppm of water vapor as further fluid to the inert gas.    USE - Procedure for producing crystallized silicon according to an edge-defined film-fed growth process by using molding parts for the production of solar cells (claimed).    ADVANTAGE - The procedure ensures economical production of crystallized silicon with high quality in faster manner thus ensuring the production of solar cells with increased efficiency and good photovoltaic properties, and a significant increase of the oxygen concentration in the melt and/or in the silicon without an increased oxidation of the graphite parts and an increased formation of silicon carbide on the melt.    DETAILED DESCRIPTION - The method for producing crystallized silicon according to an edge-defined film-fed growth process by using molding parts for the production of solar cells, comprises forming a silicon melt (44) of the crystallized silicon between the molding parts in a drawing zone, supplying an inert gas and further fluid to the silicon melt and/or to the drawing zone, increasing the oxygen content in the crystallized silicon by the inert gas and the further fluid and mixing 50-250 ppm of water vapor as further fluid to the inert gas. The inert gas with a content of oxygen, carbon monoxide and/or carbon dioxide is less than 20 ppm. The content of the water vapor in the inert gas is adjusted and/or regulated by a mass flow analyzer or a moisture-measuring device. The water vapor diffuses a well-known quantity of water in the inert gas over water- and/or water vapor-permeable membrane from a reservoir. Chlorine containing silicon granulates (20) are melted with 10 ppmw of a chlorine content for the formation of the silicon melt. The silicon granulates are used for recharge. The spherically formed granulates are melted with 90% of a ball diameter distribution between 0.8-3 mm. INDEPENDENT CLAIMS are included for:    (1) silicon; and    (2) wafer cut out from the crystallized silicon.    DESCRIPTION OF DRAWING(S) - The diagram shows a principle representation of an arrangement for the production of silicon according to the edge-defined film-fed growth process.    Housing (12)    Melting pot (16)    Granulates (20)    Pipelines (31)    Silicon melt. (44)