NOVELTY - Process for converting silicon tetrachloride (SiCl4) into silicon (Si) metal, comprises: providing an initial quantity of molten zinc (Zn) bath in a reactor; blowing gaseous SiCl4 into the molten Zn bath, to obtain a Si-bearing metal phase and zinc-chloride; separating the zinc-chloride from the Si-bearing metal phase; and purifying the Si-bearing metal phase at a temperature above the boiling point of Zn, to vaporize Zn and obtain Si metal.    USE - The process is useful for converting silicon tetrachloride into silicon metal, which is useful as base and feedstock material for producing crystalline silicon solar cells.    ADVANTAGE - The process does not require complicated technologies and preserves the high purity of the silicon tetrachloride towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled. The process recovers: Si in the molten state at the end of the purification process; and Si in the molten state, which allows for a better integration of the feedstock production with the steps towards wafer production, providing an additional reduction in the total energy consumption of the process as well as in the cost of the wafer manufacturing. The process provides purified Si granulates, which are easier to handle and to dose than the chunks obtained in e.g. the Siemens-based processes.    DETAILED DESCRIPTION - Process for converting silicon tetrachloride (SiCl4) into silicon (Si) metal, comprises: providing an initial quantity of molten zinc (Zn) bath in a reactor; blowing gaseous SiCl4 into the molten Zn bath, to obtain a Si-bearing metal phase and zinc-chloride; separating the zinc-chloride from the Si-bearing metal phase; and purifying the Si-bearing metal phase at a temperature above the boiling point of Zn, to vaporize Zn and obtain Si metal, where the contacting and the separation steps are performed in a single reactor, and the contacting step is performed by injecting SiCl4 at a molar flow rate of 0.1- 0.8 mole%/mole.minute, preferably 0.4-0.8 mole%/mole.minute of the initial Zn quantity; and a Si-Zn dross layer is formed on top of the Zn bath, and with a maximum areal supply rate of 50 kg/minute per m2 of bath surface.