TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: In the method, the contacting to remove at least one material from the microelectronic device substrate occurs in single step. The method additionally involves depositing at least one depositable material selected from low-k dielectric, high-k dielectric, etch stop material, metal stack material, barrier layer material, ferroelectric material, silicide material, nitride material, oxide material, photoresist, BARC, SARC and/or miscellaneous materials, on the reclaimed substrate. The contacting is carried out for 30 seconds to 60 minutes at 20-90 degrees C. The front side of the structure is protected from contact with the removal composition. The method involves contacting microelectronic device structure comprising microelectronic device substrate and the at least two removable materials (m1) with first removal composition for sufficient time and under conditions to remove at least first material (preferably metal) from the microelectronic device structure, and contacting the structure with second removal composition thatoptionally comprises at least one organic solvent and water for sufficient time and under conditions to remove at least second material (preferably low-k dielectric material) from the microelectronic device structure, where the first removal composition comprises at least one oxidizing agent, at least one chelating agent, and optionally water.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The at least one etchant comprises HF. The oxidizing agent comprises hydrogen peroxide. The at least one chloride source comprises hydrochloric acid, alkali metal chlorides, alkaline earth metal chlorides and/or ammonium chloride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The removal composition additionally comprises at least one organic solvent and at least one sulfone compound. The composition comprises HF, at least one sulfone, at least one sodium ethylhexyl sulfate surfactant, and water; or HF, HCl, at least one sodium ethylhexyl sulfate surfactant, at least one phosphonic acid derivative, H2O2, and water. The removal composition additionally comprises material residue selected from post-etch residue, low-k dielectric material residue, high-k dielectric material residue, barrier layer material residue, ferroelectric residue, nitride residue, silicide residue, oxide residue, polymer-containing buildup residue, ARC material residue, doped region residue and/or miscellaneous material residue. Preferred Components: The organic solvent comprises species selected from alcohol, ether, pyrrolidinones, glycol, carboxylic acid, glycol ether, amines, ketones, aldehydes, alkanes, alkenes, alkynes, amides, sulfur-containing solvent and/or sulfones, with the proviso that the glycols and glycol ethers do not include an ethylene group. The chelating agent comprises species selected from acetylacetonate,1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, formate, acetate, bis(trimethylsilylamide) tetramer, glycine, serine, proline, leucine, alanine, asparagine, aspartic acid, glutamine, valine, lysine, citric acid, acetic acid, maleic acid, oxalic acid, malonic acid, succinic acid, phosphonic acid, hydroxyethylidene diphosphonic acid (HEDP), 1-hydroxyethane-1,1-diphosphonic acid, nitrilo-tris(methylenephosphonic acid), nitrilotriacetic acid, iminodiacetic acid, etidronic acid, ethylenediamine, ethylenediaminetetraacetic acid (EDTA), (1,2-cyclohexylenedinitrilo)tetraacetic acid (CDTA), uric acid, tetraglyme, pentamethyldiethylenetriamine (PMDETA), 1,3,5-triazine-2,4,6-thithiol trisodium salt solution, 1,3,5-triazine-2,4,6-thithiol triammonium salt solution, sodium diethyldithiocarbamate, disubstituted dithiocarbamates, ammonium sulfate, monoethanolamine (MEA), Dequest 2000 (RTM: chelating agent), Dequest 2010 (RTM: chelating agent), Dequest 2060 (RTM: chelating agent), diethylenetriamine pentaacetic acid, propylenediamine tetraacetic acid, 2-hydroxypyridine 1-oxide, ethylendiamine disuccinic acid and/or sodium triphosphate penta basic.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The at least one surfactant comprises species selected from fluoroalkyl surfactant, ethoxylated fluorosurfactant, polyethylene glycol, polypropylene glycol, polyethylene glycol ether, polypropylene glycol ether, carboxylic acid salt, dodecylbenzenesulfonic acid and their salts, polyacrylate polymer, dinonylphenyl polyoxyethylene, silicone polymer, modified silicone polymer, acetylenic diol, modified acetylenic diol, alkylammonium salt, modified alkylammonium salt, alkylphenol polyglycidol ether, sodium alkyl sulfate, ammonium alkyl sulfate, 10-18C alkyl carboxylic acid ammonium salt, sodium sulfosuccinate and their esters, 10-18C alkyl sulfonic acid sodium salt, di-anionic sulfonate surfactant, cetyltrimethylammonium bromide, cetyltrimethylammonium hydrogen sulfate, ammonium carboxylate, ammonium sulfate, amine oxide, N-dodecyl-N,N-dimethylbetaine, betaine, sulfobetaine, alkylammoniopropyl sulfate, polyethylene glycol (PEG), polyethylene oxide (PEO), polyvinyl pyrrolidone (PVP), hydroxyethylcellulose (HEC), acrylamide polymers, poly(acrylic acid), carboxymethylcellulose (CMC), sodium carboxymethylcellulose (Na CMC), hydroxypropylmethylcellulose, polyvinylpyrrolidone K30, latex powder, ethylcellulose polymer, propylcellulose polymer, cellulose ether and/or water soluble resin. EXAMPLE - A removal composition comprising (wt.%): HF (20.1), sulfolane (2.2), water (56) and dipropylene glycol propyl ether (21.7), was prepared. A blanketed wafer including black diamond was immersed in the composition for 5 minutes at 50 degrees C. The film delaminated in 1 minute and dissolved in 10 minutes and surface was clean at 50 degrees C.