EP1981089-A2  CAMPET G ET AL: "THE ELECTRONIC EFFECT OF TI4+, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS: APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES" MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B19, no. 3, 20 June 1993 (1993-06-20), pages 285-289, XP000381050 ISSN: 0921-5107;  SAFI ET AL: "The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant" THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 343-344, April 1999 (1999-04), pages 115-118, XP005020892 ISSN: 0040-6090;  DELAHOY A ET AL: "Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 23, no. 4, 28 June 2005 (2005-06-28), pages 1215-1220, XP012074042 ISSN: 0734-2101;  GROTH R: "Investigation of semiconductor indium oxide films" Physica Status Solidi Germany, vol. 14, no. 1, 1966, pages 69-75, XP008061030;  CHOPRA K L ET AL: "TRANSPARENT CONDUCTORS A STATUS REVIEW" THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 102, January 1983 (1983-01), pages 1-46, XP000573894 ISSN: 0040-6090;  HUSEYNOV E ET AL: "IR-detectors based on In2O3-anode oxide-CdxHg1-xTe" International Journal of Infrared and Millimeter Waves Plenum USA, vol. 23, no. 9, September 2002 (2002-09), pages 1337-1345, XP002371020 ISSN: 0195-9271EP1981089-A3  GROTH R: "Investigation of semiconductor indium oxide films", PHYSICA STATUS SOLIDI GERMANY, vol. 14, no. 1, 1966, pages 69 - 75, XP008061030,relevantClaims[1-8,10,11|9,12-20],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;&lt;figure&gt;4&lt;/figure&gt;|&lt;pp&gt;72&lt;/pp&gt;&lt;para&gt;L&lt;/para&gt;&lt;ppl&gt;73&lt;/ppl&gt;];  CHOPRA K L ET AL: "TRANSPARENT CONDUCTORS A STATUS REVIEW", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 102, January 1983 (1983-01-01), pages 1 - 46, XP000573894, ISSN: 0040-6090,relevantClaims[9|1-8,10-20],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;|&lt;pp&gt;6,20&lt;/pp&gt;];  HUSEYNOV E ET AL: "IR-detectors based on In2O3-anode oxide-CdxHg1-xTe", INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES PLENUM USA, vol. 23, no. 9, September 2002 (2002-09-01), pages 1337 - 1345, XP002371020, ISSN: 0195-9271,relevantClaims[18,19],relevantPassages[&lt;pp&gt;A&lt;/pp&gt;];  DELAHOY A ET AL: "Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 23, no. 4, 28 June 2005 (2005-06-28), pages 1215 - 1220, XP012074042, ISSN: 0734-2101,relevantClaims[1-20],relevantPassages[&lt;pp&gt;1216&lt;/pp&gt;&lt;column&gt;RHC&lt;/column&gt;&lt;figure&gt;4&lt;/figure&gt;&lt;table&gt;1&lt;/table&gt;];  SAFI ET AL: "The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 343-344, April 1999 (1999-04-01), pages 115 - 118, XP005020892, ISSN: 0040-6090,relevantClaims[1-8],relevantPassages[&lt;para&gt;5&lt;/para&gt;];  CAMPET G ET AL: "THE ELECTRONIC EFFECT OF TI4+, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS: APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B19, no. 3, 20 June 1993 (1993-06-20), pages 285 - 289, XP000381050, ISSN: 0921-5107,relevantClaims[1,9,10],relevantPassages[&lt;pp&gt;286&lt;/pp&gt;&lt;column&gt;RHC&lt;/column&gt;&lt;ppl&gt;287&lt;/ppl&gt;&lt;coll&gt;LHC&lt;/coll&gt;&lt;figure&gt;3&lt;/figure&gt;&lt;table&gt;1&lt;/table&gt;]EP1981089-B1  GROTH R: "Investigation of semiconductor indium oxide films" Physica Status Solidi Germany, vol. 14, no. 1, 1966, pages 69-75, XP008061030;  CHOPRA K L ET AL: "TRANSPARENT CONDUCTORS A STATUS REVIEW" THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 102, January 1983 (1983-01), pages 1-46, XP000573894 ISSN: 0040-6090;  HUSEYNOV E ET AL: "IR-detectors based on In2O3-anode oxide-CdxHg1-xTe" International Journal of Infrared and Millimeter Waves Plenum USA, vol. 23, no. 9, September 2002 (2002-09), pages 1337-1345, XP002371020 ISSN: 0195-9271;  DELAHOY A ET AL: "Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 23, no. 4, 28 June 2005 (2005-06-28), pages 1215-1220, XP012074042 ISSN: 0734-2101;  SAFI ET AL: "The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant" THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 343-344, April 1999 (1999-04), pages 115-118, XP005020892 ISSN: 0040-6090;  CAMPET G ET AL: "THE ELECTRONIC EFFECT OF TI4+, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS: APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES" MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B19, no. 3, 20 June 1993 (1993-06-20), pages 285-289, XP000381050 ISSN: 0921-5107