NOVELTY - Production of photoelectric converter (PEC) on the base of p-type silicon substrate, involves growth of a porous silicon layer; simultaneous diffusion of boron and phosphorus from the borosilicate and phosphorosilicate emulsions, respectively earlier deposited onto the back and top surfaces; chemical removal of the oxide films from the both surfaces of the substrate; texturing the top surface of the photoelectric converter; growth of porous silicon layer; formation n-layer; growth of porous silicon layer; and formation of current-collecting contacts.    USE - For producing photoelectric converter (PEC) useful as component parts (e.g. solar cell) of PEC modules and solar batteries.    ADVANTAGE - The method does not include any additional high temperature process of oxidizing and provides the performance of the potential barriers formation at relatively low temperature (less than 780degreesC). This does not reduce the life-time of charge carriers, and enhances this parameter due to gettering and saturation of the surface layer by hydrogen. The method decreases the power inputs and improves the quality of source silicon; and provides fundamentally new service properties of the photoelectric converter (PEC): an effective passivation of the surface due to stable hydrogen content in the surface layer; an effective separation of photoproduced charge carriers due to formation of 3D potential barriers; a reducing of optical reflection from the PEC top surface due to new geometry; an enhancement of the IR reflection from the PEC back surface; and the UV to visible radiation. The method provides better technical characteristics at lower production costs, as compared to the known methods. This causes an enhancement of photosensitivity both in short- and long-wave spectral ranges. As a result, the density of short-circuit current of PEC produced by the suggested method could be as high as 41 mA/cm2, the open-circuit voltage of 650 mV and the conversion efficiency of 20%.    DETAILED DESCRIPTION - Production of photoelectric converter (PEC) on the base of p-type silicon substrate, involves growth of a porous silicon layer; simultaneous diffusion of boron and phosphorus from the borosilicate and phosphorosilicate emulsions, respectively earlier deposited onto the back and top surfaces; chemical removal of the oxide films from the both surfaces of the substrate; texturing the top surface of the photoelectric converter; growth of porous silicon layer; formation n-layer; growth of porous silicon layer; and formation of current-collecting contacts.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of manufacturing of photoelectric converter.