NOVELTY - The method involves preparing a transparent insulator substrate (12) and a p-type or n-type single crystal silicon substrate (12), and then forming an ion implanted layer (24) in the single crystal silicon substrate. A single crystal silicon layer (17) is formed on the single crystal silicon substrate. A diffusion layer is formed on the single crystal silicon layer, in which the diffusion layer may be n-type or p-type to form a p-n junction in the single crystal silicon layer. An electrode (23) is then formed on the single crystal silicon layer.    USE - Single crystal silicon solar cell (claimed) production method.    ADVANTAGE - Provides a single crystal silicon solar cell that acts as a silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell. Ensures that the single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation. Ensures that the single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like, and that transmits part of the received visible light. Ensures that the single crystal silicon thin-film can be obtained, even without conducting a heat treatment for delamination. Enables enhanced conversion efficiency of the solar cell due to enhanced crystallinity of the single crystal silicon layer. Ensures that the delamination of the single crystal silicon substrate for formation of the single crystal silicon layer is conducted as mechanical delamination without relying on heating, thereby enabling suppression of introduction of cracks, defects, and the like into the light conversion layer due to a difference of thermal expansion coefficient. Ensures that the solar cell is made to be a thin-film solar cell having the thin layer of silicon, thereby enabling a silicon material to be saved and effectively utilized. Forms an excellent transparent electroconductive film using substances having adhesive function and excellent visible light transmissivity.    DETAILED DESCRIPTION - The ion implanted layer is formed by implanting hydrogen ions and rare gas ions into the single crystal silicon substrate through an ion implanting surface (13). The single crystal silicon substrate and transparent insulator substrate are then arranged in close contact with each other via a transparent electroconductive adhesive (15) while using the ion implanting surface as a bonding surface. The transparent electroconductive adhesive is cured and matured into the transparent electroconductive film to bond the single crystal silicon substrate and the transparent insulator substrate to each other. An impact is applied to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave the single crystal silicon layer.    DESCRIPTION OF DRAWING(S) - The drawing shows the process diagram of the method for producing a single crystal silicon solar cell.    Single crystal silicon substrate (12)    Transparent insulator substrate (12)    Ion implanting surface (13)    Transparent electroconductive adhesive (15)    Single crystal silicon layer (17)    Electrode (23)    Ion implanted layer (24)