NOVELTY - Tetrachlorosilane (SiCl4) and tetrachlorogermane (GeCl4) is converted to germanium silicon alloy by contacting SiCl4 and GeCl4 through an injection tube with a zinc-containing liquid metal phase to obtain silicon metal phase and zinc chloride; separating zinc chloride from silicon and germanium metal phase; and purifying the silicon and germanium metal phase at a temperature above the boiling point of zinc for vaporizing zinc to obtain germanium silicon alloy. The contacting and separating steps are simultaneously performed in a single reactor.    USE - For manufacturing high purity germanium silicon alloys for used as base material for silicon solar cells production (Claimed).    ADVANTAGE - The method does not require complicated technologies; preserves the high purity of tetrachlorosilane and tetrachlorogermane; minimizes zinc consumption, thus allowing for more efficient and economic purification step; and has reduced amount of zinc to be evaporated.    DETAILED DESCRIPTION - Tetrachlorosilane (SiCl4) and tetrachlorogermane (GeCl4) is converted to germanium silicon alloy by contacting SiCl4 and GeCl4 through an injection tube with a zinc-containing liquid metal phase to obtain silicon metal phase and zinc chloride; separating zinc chloride from silicon and germanium metal phase; and purifying the silicon and germanium metal phase at a temperature above the boiling point of zinc for vaporizing zinc to obtain germanium silicon alloy. The end of the injection tube has a dispersion device to obtain silicon germanium metal phase and zinc chloride. Silicon metal phase and zinc chloride is obtained by contacting gaseous SiCl4 with the zinc liquid metal phase. The contacting and separating steps are simultaneously performed in a single reactor. An INDEPENDENT CLAIM is included for a method for granulating the purified liquid germanium silicon alloy comprising feeding the granules to a melting furnace; and applying a single solidification step using a ribbon growth method or directional solidification.