TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: (I) Is applied to the substrate by physical vapor deposition, in at least partly crystalline form or in form of a thin film. The method comprises depositing on the surface of the substrate, a compound(s) (C1) capable of binding to the surface of the substrate and of binding compound(s) of (I). (I) Is employed that results from purification by sublimation, physical vapor transport, and/or recrystallization. Preferred Compound: (C1) is alkyltrialkoxysilanes, preferably n-octadecyl trimethoxysilane or n-octadecyl triethoxysilane; or hexaalkyldisilazanes, preferably hexamethyldisilazane. Preferred Parameter: The temperature of the substrate material during the deposition is less than the temperature corresponding to the vapor pressure. It is 20-250, preferably 50-200degrees C. (I) Is applied to the substrate in a layer having an average thickness of 10-1000, preferably 15-350 nm. SPECIFIC COMPOUNDS - (I) Is specifically claimed as a compound of formula (1) or (2).    EXAMPLE - N,N'-bis(2-phenylethyl)perylene-3,4:9,10-bis(dicarboximide) (BPE-PTCDI) was synthesized from perylene-3,4:9,10-tetracarboxylic acid bisanhydride and phenethylamine. It was purified by 3 consecutive vacuum sublimations using a three-temperature-zone furnace under high vacuum (less than 5x 10-6 torr). The starting material was placed in the first temperature zone. The three temperature zones were set to be 400, 350, and 300degrees C. A highly doped n++ silicon substrate was used as a common gate electrode. A thermally grown silicon dioxide (300 nm, capacitance Ci=10 nF/cm2) was used as the dielectric layer. The substrate was cleaned by rinsing with acetone followed by isopropyl alcohol and then treated with octadecyl-trimethoxysilane (OTS). BPE-PTCDI layer (45 nm thickness) was deposited on top of the substrates at less than 2x 10-6 torr with a deposition rate of 1.0 Angstrom /s using a vacuum thin-film deposition system to produce a top contact n-type transistor. The substrate was held at 200degrees C during thin film deposition. The area for the n-type film was 1 by 2 cm. The n-type mobility, on/off ratio, and threshold voltage for BPE-PTCDI were 0.12 cm2/Vs, 2.2x 105, 28.3 V, respectively.