TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred System: The intensity ratio of a graphite G band at 1590 cm-1 to a disordered-induced D band at 1350 cm-1 of the carbon nanotube hybrid system is greater than an intensity ratio of a graphite G band at 1590 cm-1 to a disordered-induced D band at 1350 cm-1 of the carbide-derived carbon material used for preparation. The degree of crystallinity of the carbon nanotube hybrid system is greater than a degree of crystallinity of the carbide-derived carbon material used for preparation. In the system, all elements of the carbide compound except carbon are extracted. Preferred Method: The metal remains in the carbide-derived carbon after the extracting of the elements of the carbide compound; where the metal remains in an amount of 0.1-20 parts by weight based on 100 parts by weight of a total amount of the metal and the carbide-derived carbon. Preferred Components: The metal is at least one of Ni, Co, Fe, or W in an amount of 0.1-20 parts by weight based on 100 parts by weight of the total amount of the metal and the carbide-derived carbon. The metal further comprises Mo. The metal supported on the carbide-derived carbon is derived from the carbide compound and not extracted from the halogen group containing gas. The carbide-derived carbon has intensity ratios of a graphite G band at 1590 cm-1 to a disordered-induced D band at 1350 cm-1 of 0.3-5 when analyzed using Raman peak analysis. The Brunauer-Emmett-Teller surface area of the carbide-derived carbon is greater than 950 m2/g. The carbide-derived carbon has a weak peak or a wide single peak of a graphite (002) surface at 2 theta of 25 degrees when analyzed using X-ray diffraction. The electron diffraction pattern of the carbide-derived carbon is a halo-pattern of amorphous carbon when analyzed using electron microscopy. The carbide compounds comprise at least one carbide compound selected from SiC4, B4C, TiC, zirconium carbide, Al4C3, CaC2, titanium tantalum carbide, molybdenum tungsten carbide, titanium carbonitride, and zirconium carbonitride. EXAMPLE - A alpha -SiC (100 g) having an average diameter of 0.7 mu m as a carbon precursor (carbide compound) was maintained in a high temperature furnace composed of a graphite reaction chamber and a transformer. Chlorine gas (0.5 l) was applied to the high temperature furnace at 1000 degrees C per minute for 7 hours. Thus, carbide-derived carbon (30 g) was prepared by extracting the Si from the carbon precursor. The carbide-derived carbon was analyzed using Raman peak analysis, X-ray diffraction, and an electron microscope. The carbide-derived carbon (20 g) was mixed with iron (III) nitrate (2 g) in an ethanol solution, and the mixture was filtered and a hydrogen reduction reaction was performed to prepare a carbon nanotube hybrid system in which carbon nanotubes were grown from the carbide-derived carbon.