NOVELTY - A transparent oxide electrode film has indium oxide containing titanium and tungsten as its main component. Indium in the indium oxide is substituted with titanium and tungsten at a ratio which when the titanium/indium atomic ratio is deemed x and the tungsten/indium atomic ratio is deemed y, satisfies y=0.019-1.9 to 0.034-0.28x. The indium oxide is crystalline. The resistivity is up to 5.7x 10-4 or up to 3.8x 10-4 Omega -cm.    USE - The film is used in a solar cell and a photo detection element (claimed).    ADVANTAGE - The film has excellent transmittance not only in the visible light region but also in the infrared light region, and low resistance. Highly efficient use of the solar energy in the infrared light region becomes possible. Infrared light can be carried into the layer of photo detection materials without damping within the entrance electrode which the role as electrode is achieved. A photo detection element available to detect weaker infrared light in comparison with the prior art can be realized.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a manufacturing method for a transparent oxide electrode film by depositing transparent oxide electrode film using a sputtering target manufactured from an oxide sintered body for which the constituent elements are indium, titanium, and oxygen, or sputtering target manufactured from an oxide sintered body for which the constituent elements are indium, titanium, tungsten, and oxygen at a substrate temperature of at least 100 degrees C, using a mixed gas of argon and oxygen containing at least 0.25% oxygen as the sputtering gas;    (2) a transparent electroconductive base material, where the transparent oxide electrode film is formed on a transparent substrate;    (3) a solar cell comprising a transparent electrode layer on a transparent substrate, a window layer of a semiconductor, a middle layer of an n-type semiconductor, and a light absorbing layer of a p-type semiconductor; and    (4) a photo detection element comprising a pair of electrodes and a layer of photo detection materials interposed between the electrodes.    The average light transmittance in the wavelength of 1000-1400 nm is at least 60%, and the surface resistance is up to 30 tau /square.