TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic oxide functional group is selected from alumina, titania, zirconia, germania, silica and/or ceria.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Slurry: The CMP polishing slurry further comprises a hydrophilic co-monomer. The slurry is adjusted to a pH of 12-13. Preferred Components: The hydrophilic co-monomer is 3-(trimethoxysilyl)propyl methacrylate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer is a compound having a skeleton of an N,N-di-substituted product selected from acrylamide, methacrylamide and their a-substituted products. The polymer is formed via colloidal precipitation. EXAMPLE - N-isopropylacrylamide (NIPAM) that was previously recrystallized in hexane, was dissolved in deionized water to which a divinyl cross-linker, N,N'-methylenebisacrylamide was added. The solution was bubbled with nitrogen gas, to displace oxygen after which the polymerization was initiated at 75 degrees C with the ionic initiator potassium persulfate. Two hours after initiation, 25 wt.% of the co-monomer, 3-(trimethoxysilyl)propyl methacrylate was added to the reaction mixture and the polymerization allowed to continue for a further 1 hour 45 minutes. The product obtained was centrifuged at 7000 revolution per minutes (rpm) and washed with deionized water three times to remove oilogmers, unused reactants and side products. The resulting hybrid PNIPAM-polysiloxane material was involved using Fourier Transform Infrared (FTIR), Dynamic Light Scattering (DLS) and Transmission Electron Microscopy (TEM). These particles were then used for chemical planarization on CETR bench top tester. Chemical Mechanical Polishing (CMP) of silicon dioxide wafers was performed using the slurries made with the above abrasive particles on a bench top CMP tester using an IC1000 perforated/Suba 500 polishing pad. Planarization was conducted at a typical downward pressure of 4 psi, pad rotation of 200 rpm and a slurry flow rate of 75 ml/minutes. The pH of the slurries was adjusted to 12. The slurry of hybrid PNIPAM polysiloxane particle at 25 degrees C with approximately size of particle of 500 nm, temperature of 25 degrees C and pH of 12; and weight of particle in slurry of 1.50%. The average removal rate during was 12 nm/minutes and the average coefficient of friction during CMP with different particles was graphically 0.26. The PNIPAM-polysiloxane hybrid particles resulted in the lowest coefficient of friction when compared to slurries with only silica particles, which translates to lower shear force on the wafer surface during polishing. This makes the PNIPAM-polysiloxane hybrid particle a potential candidate for next generation CMP slurries. From the FTIR spectra, no organic residue from the polymer was found on the surface of the polished wafer. Polishing with silica alone yields many scratches on the wafersurface, which was detrimental to the process yield of the fabricated devices (integrated chips). The surface roughness after polishing with the hybrid particles was significantly lower (i.e. 0.86 nm) and the surface was smooth. Thus, the PNIPAM-polysilxane particles present an advantage over the conventional particles as they resulted in a lower coefficient of friction during CMP and better post CMP surface quality. Thus the slurry enhanced the polymer-inorganic particles to achieve high removal rates and to reduce the size of the particles.