NOVELTY - Production of semiconductor-on-insulator (SOI) structure comprises providing two substrates (20), each having two external surfaces (13b, 22), one for bonding and another for force-applying. The first substrate is made from single-crystal semiconductor material, which comprises an internal separation zone separating this substrate into two parts (15). The second substrate is made from oxide glass and/or ceramic. The bonding surfaces in each substrate are brought into contact. The substrate is pressed by applying force, is induced with electric field and heated.    USE - Method for production of semiconductor-on-insulator structure useful for semiconductor-on-glass structure used in optoelectronics, radio frequency electronics, mixed signal (analog/digital) electronics, display applications including LCD and organic LED, photovoltaic cell and solar cell.    ADVANTAGE - The method has low production cost, where high temperature processing is avoided, thus eliminating the need for support substrate made of expensive materials.    DETAILED DESCRIPTION - Production of SOI structure comprises providing two substrates (20), each having two external surfaces (13b, 22), one for bonding and another for force-applying. The first substrate is made from single-crystal semiconductor material, which comprises an internal separation zone separating this substrate into two parts (15). The second substrate is made from oxide glass and/or ceramic. The bonding surfaces in each substrate are brought into contact. Force is applied to the force-applying surfaces to press the bonding surfaces. The substrates are induced with an electric field at each force-applying surface at two respective voltages, where electric field is directed from the first substrate to the second substrate, and heating each force-applying surface at two respective temperatures. During the electric field-inducing and heating steps, substrates bond to one another, and positive ions within the second substrate move in a direction away from their bonding surfaces but towards their force-applying surfaces.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of SOI.    External surfaces (13b, 22)    First substrate part (15)    Substrates (20)    Interface (30)