NOVELTY - The device for the production of silicon for use in solar cells, comprises a housing (22) having a wall, which has an interior area that bounds a chamber (28), three thermal energy sources (40, 42, 44) arranged near to the housing to deliver thermal energy to the chamber, a quartz source inlet (46) arranged at an end of the device and connected with the chamber to bring hydrocarbons into the chamber, and a gas outlet arranged at the end of the device and connected with the chamber.    USE - Device for the production of silicon (claimed) for use in solar cells.    ADVANTAGE - The device ensures simple and economical production of the silicon with high quality by requiring low cost raw materials.    DETAILED DESCRIPTION - The device for the production of silicon for use in solar cells, comprises a housing (22) having a wall, which has an interior area that bounds a chamber (28), three thermal energy sources (40, 42, 44) arranged near to the housing to deliver thermal energy to the chamber, a quartz source inlet (46) arranged at an end of the device and connected with the chamber to bring hydrocarbons into the chamber, a gas outlet arranged at the end of the device and connected with the chamber to release the gas from the inside of the chamber to outside of the chamber, a silicon outlet arranged at an opposite end of the device and connected with the chamber to discharge the produced silicon, an oven with zones, a gas inlet arranged at opposite end of the device to supply a scavenging gas, and a hydrocarbon inlet (48) having an embedded tube to supply a coolant through the tube. The first thermal energy source is arranged to raise the temperature of more than 600degreesC in first zone, the second thermal energy source is arranged to raise the temperature of more than 1600degreesC in the second zone and the third thermal energy source is arranged to raise the temperature of more than 2000degreesC in third zone. The temperature of the zones is controlled independently. The device is arranged to separate the hydrocarbon to form a coating that has carbon on the grain. The average size of the grain is 1 micrometer to 5 centimeter. The molar ratio of the quartz and carbon in the grain is 1:2. The hydrocarbon and the quartz source are continuously promoted to an end of the device and the produced silicon is collected at another end of the device.    DESCRIPTION OF DRAWING(S) - The figure shows a device for the production of silicon.    Housing (22)    Chamber (28)    Thermal energy sources (40, 42, 44)    Quartz source inlet (46)    Hydrocarbon inlet. (48)