NOVELTY - A solar cell device with silicon nano-wires comprises titanium-palladium-silver grid electrodes, n-type organic semiconductor, p-type silicon nano-wires, p-type silicon substrate layer and aluminum metallic film back electrode layer which are orderly overlapped. The Ti/Pd/Ag grid electrode is located on n-type organic semiconductor. The n-type organic semiconductor film layer is positioned on the p-type nano silicon wire array layer, and a p-n hetero-junction is formed together with p-type nano silicon wires such that photovoltaic effect is generated.    USE - Solar cell device.    ADVANTAGE - The solar cell device has excellent optical absorption capability and high photoelectric conversion efficiency.    DETAILED DESCRIPTION - A solar cell device with silicon nano-wires comprises titanium-palladium-silver (Ti/Pd/Ag) grid electrodes, n-type organic semiconductor, p-type silicon nano-wires, p-type silicon substrate layer and aluminum metallic film back electrode layer which are orderly overlapped. In solar energy conversion device, the Ti/Pd/Ag grid electrodes is located on the n-type organic semiconductor and adopted as front extraction electrode. The n-type organic semiconductor film layer includes 6,6-phenyl C61 butyric acid methyl ester is positioned on the p-type nano silicon wire array layer, and a p-n hetero-junction is formed together with p-type nano silicon wires such that photovoltaic effect is generated. The p-type nano silicon wires positioned on p-type silicon substrate layer, is applied to form a p-n hetero-junction with n-type organic semiconductor film layer such that photovoltaic effect is generated and adopted as an anti-reflection layer of solar cell. The p-type silicon substrate layer on the aluminum metallic film back electrode layer is applied on base region of the solar cell. The aluminum metallic film back electrode layer is applied to form a back electrical field of the solar cell. The p-type silicon nano-wires are arranged between n-type organic semiconductor film layer and p-type silicon substrate layer.