NOVELTY - A plasma deposition apparatus (100) for making polycrystalline silicon comprises deposition chamber containing induction coupled plasma torch (102) for producing a plasma flame for reacting reactant to produce a reaction product and depositing the product on target substrate. The plasma torch is located a fixed distance from the substrate. The support moves the target substrate in a direction away from induction coupled plasma torch to provide fixed distance between target substrate and induction coupled plasma torch.    USE - For making polycrystalline silicon e.g. silicon, intrinsic silicon, p-type doped silicon, and n-type doped silicon (claimed) useful in the manufacturing of single silicon solar cell.    ADVANTAGE - The torch produces a large deposition area on the target substrate. By being perpendicular to the deposition surface, the polycrystalline silicon that is created in the reaction zone near the end of the induction coupled plasma torches flows directly towards the perpendicular planar deposition surface. The deposition apparatus rotates the target substrate during deposition to produce a uniform layer of polycrystalline silicon on the deposition surface. The apparatus eliminates the manufacturing of polysilicon as a separate process and also eliminates the additional p-type and n-type doping processing steps that occur subsequently. The method can also use and reuse the same raw materials, because the un-reacted or un-deposited chemicals can be collected and recycled for reprocessing through the apparatus. The apparatus does not use different types of material as a substrate, thus there is no additional process for separation. The method eliminates the additional processing steps found in conventional deposition methods, which can cause extra process loss. The method minimizes the potential contamination of the substrate. The method has no limitation on the size of the target area and the produced silicon ingot can be removed to provide a continuous process. The apparatus separates the reaction zone from the deposition zone. By doing so, the process temperature of the reaction zone can be thermodynamically optimized for higher chemical reaction efficiency. Moreover, in the deposition zone, optimal temperatures for better deposition efficiency and product quality can be achieved. Since the deposition surface of the silicon ingot is facing perpendicular to the plasma flame of the induction coupled plasma torch, a larger collecting or deposition surface is available for silicon deposition. The vertical deposition method has a higher deposition rate than that achieved in a deposition of a curved surface, such as on a rod form. By using more than one induction coupled plasma torch will further increase the deposition rate and will increase the deposition area of the target, which can further reduce manufacturing costs of a solar cell. The plasma deposition apparatus provides better deposition control and more uniform dopant distribution while eliminating the diffusion step of conventional processes, thus yielding a higher production rate of doped silicon.    DETAILED DESCRIPTION - A plasma deposition apparatus (100) for making polycrystalline silicon, comprises chamber for depositing the polycrystalline silicon; support (103) for supporting a target substrate (104) having a deposition surface (106); and induction coupled plasma torch (102) for producing a plasma flame for reacting at least one reactant to produce a reaction product and depositing the product on target substrate. The plasma torch is located a fixed distance from the substrate. The support moves the target substrate in a direction away from induction coupled plasma torch to provide fixed distance between target substrate and induction coupled plasma torch. The reactant is in the form of a material selected gas, vapor, aerosol, small particle, nanoparticles, or powder. The chamber further includes an exhaust unit located above deposition surface for exhausting un-deposited solids and un-reacted chemicals from chamber; a recycling unit for recycling un-deposited solids and un-reacted chemicals exhausted for re-use in deposition apparatus; and an induction coil containing windings having a diameter greater than that of outer quartz tube and spaced apart from each other by distance of 2-10 mm. The distance between induction coil and target substrate is 30-55 mm. The induction coupled plasma torches comprises an outer quartz tube (108); an inner quartz tube (110); and a chamber connecting outer and inner quartz tube. The chamber for depositing is made from a material that shields radio frequency (RF) energy and isolates chamber from the environment outside of the chamber. An INDEPENDENT CLAIM is included for making a layer of polycrystalline silicon on a target substrate in a deposition chamber involving supporting target substrate; providing a high frequency induction coupled plasma torch; introducing a plasma gas consisting of an inert gas into high frequency induction coupled plasma torch to form a plasma within coil; injecting reactants into high frequency induction coupled plasma torch to produce a reaction product; and depositing reaction product of induction coupled plasma torch onto substrate while maintaining spacing between substrate and coil.    DESCRIPTION OF DRAWING(S) - The figure shows a cutaway side view of the plasma deposition apparatus for making polycrystalline silicon.    plasma deposition apparatus (100)    induction coupled plasma torch (102)    support (103)    target substrate (104)    deposition surface (106)    outer quartz tube (108)    inner quartz tube. (110)