NOVELTY - The method for sealing a porous dielectric comprises receiving a substrate having the porous dielectric, removing (802) contamination from the porous dielectric and a conductive region of the substrate, exposing the substrate to an organosilane, forming (806) a monolayer by exposing the porous dielectric to seal, and removing contamination from the conductive region. The monolayer is formed as a result of bonding reaction, a hydrolysis reaction, a hydrogen bonding reaction in co-ordination with a condensation reaction, and a drying reaction.    USE - The method is useful for sealing a porous dielectric (claimed), which is useful in the electronic devices. Uses include but are not limited to microprocessors, storage devices, graphic processors, analog to digital converters, digital to analog converters, signal processors and image processors.    ADVANTAGE - The method ensures efficient and economic sealing of a porous dielectric without any undesired material formation on conductive surfaces thus enhancing the performance of the electronic devices, effectively removes organic and metallic contamination from exposed dielectric surfaces, and prevents diffusion of reactants, reagents, precursors and carrier gases from subsequent depositions into the porous dielectric material.    DETAILED DESCRIPTION - The method for sealing a porous dielectric comprises receiving a substrate having the porous dielectric, removing (802) contamination from the porous dielectric and a conductive region of the substrate, exposing the substrate to an organosilane, forming (806) a monolayer by exposing the porous dielectric to seal, and removing contamination from the conductive region. The monolayer is formed as a result of bonding reaction, a hydrolysis reaction, a hydrogen bonding reaction in co-ordination with a condensation reaction, and a drying reaction. The monolayer is cross-linked using electron beam curing and UV radiation curing. The organosilane includes a hydrolysable group for facilitating attachment with the porous dielectric, and a linking group represented by (CH2)n, where n is greater than or equal to 0 and selected to match a pore size of the dielectric. The pore size of the porous dielectric is 11-50 Angstroms. The substrate is post-processed using physical modifications, chemical modifications, electrical modifications, thermal modifications, magnetic modifications, photolytic modifications, cleaning, surface modification, surface preparation, deposition, dispensing, reaction, functionalization, etching, planarization, chemical mechanical planarization, electrochemical mechanical planarization, lithography, patterning, implantation, thermal treatment, infrared treatment, ultraviolet treatment, electron beam curing, X-ray treatment, vaporization, annealing, cross-linking, polymerizing, and oligomerizing. The substrate is an integrated circuit, a semiconductor device, a flat panel display, an optoelectronic device, a data storage device, a magneto-electronic device, a magneto-optic device, a molecular electronic device, a solar cell, a photonic device, and a packaged device.    INDEPENDENT CLAIMS are included for:    (1) a device; and    (2) a method.    DESCRIPTION OF DRAWING(S) - The figure shows a flow diagram for sealing porous low-k dielectrics.    Removing organic and metallic contamination from exposed dielectric surfaces (802)    Removing copper oxide and contamination from exposed copper surfaces (804)    Forming a molecularly self-assembled layer on exposed dielectric surfaces (806)    Removing contamination and/or residue from exposed copper surfaces (808)    Rinsing the substrate. (810)