NOVELTY - Electronic device (40) comprises a charge carrier separation layer including a layer of a P-type material (42) containing copper, gallium, indium and at least one member selected from selenide and sulfide; a layer of an N-type material (44) adjacent to the P-type material, where the N-type material including diamond-like carbon doped with an N dopant; and a first electrode (46) adjacent to the layer of P-type material of the charge carrier separation layer opposite to the N-type material.    USE - As an electronic device selected from multi-junction solar cell (claimed).    ADVANTAGE - The device has enhanced performance; containing diamond-like carbon has high radiation hardness, thus prevents aging and radiation degradation over time; reducing thermal mismatch between layers of the device; and is useful on low light or cloudy days. The electrodes and the charge carrier separation layers are formed or prepared at below 750 (preferably below 650) degrees C, thus low temperature processing prevents or significantly reduces warpage.    DETAILED DESCRIPTION - Electronic device (40) comprises a charge carrier separation layer including a layer of a P-type material (42) containing copper, gallium, indium and at least one member selected from selenide and sulfide; a layer of an N-type material (44) adjacent to the P-type material, where the N-type material including diamond-like carbon doped with an N dopant; a first electrode (46) adjacent to the layer of P-type material of the charge carrier separation layer opposite to the N-type material; a second electrode (50) adjacent to the layer of N-type material of the charge carrier separation layer opposite to the P-type material. The diamond-like carbon is conductive diamond-like carbon. The second electrode is a member selected from indium tin oxide, doped zinc oxide, and/or fluorine-doped tin oxide. The N dopant is a member selected from nitrogen, phosphorus, lithium, arsenic, bismuth, and/or antimony. INDEPENDENT CLAIMS are included for following:    (1) a charge carrier separation layer comprising layer of a P-type material containing copper, gallium, indium and at least one of selenide or sulfide; and a layer of an N-type material adjacent to the P-type material, the N-type material including diamond-like carbon doped with an N dopant; and    (2) forming an electronic device involving coating a layer of diamond-like carbon onto substrate; doping the layer of diamond-like carbon with an N dopant to form an N-type material layer; applying a layer of a P-type material to the diamond-like carbon layer, where the P-type material includes copper, gallium, indium and at least one member selected from selenide and sulfide; and applying a first electrode to the layer of P-type material layer opposite to the N-type material layer.    DESCRIPTION OF DRAWING(S) - The figure shows diamond-like carbon device.    Electronic device (40)    P-Type material (42)    N-type material (44)    First electrode (46)    Second electrode (50)