NOVELTY - Formation of semiconductor material comprises providing sample of iron disilicide including greater than or equal to 90% beta phase entity (104) and having first particle size, combining sample of iron disilicide and binding material to form material mixture (106), providing substrate unit including surface region (108), depositing material mixture overlying surface region of substrate (110), and forming thickness of material overlying substrate unit (114) using post-deposition process including curing process. The thickness of material comprising the sample of iron disilicide is the thickness of first particle size.    USE - Formation of semiconductor material for photovoltaic devices.    ADVANTAGE - The method uses environmentally clean materials that are non-toxic, and provides a process that is compatible with conventional process technology without modifications to conventional equipment and processes. Each of beta phase iron disilicide particles is exposed to electromagnetic radiation and not blocked or shadowed by other particles, thus improving efficiency of photovoltaic device.    DETAILED DESCRIPTION - The sample of iron disilicide comprises greater than 95% beta phase iron silicide. The binding material is an organic polymer material, inorganic polymer material, or spin on glass material. The substrate unit is a transparent substrate including glass, quartz, fused silica, polymer, insulator, or preferably semiconductor comprising silicon, polysilicon, silicon-germanium, germanium or silicon on insulator; and a multilayered material or metal.    DESCRIPTION OF DRAWING(S) - The drawing shows a simplified flow diagram of forming a sample of semiconductor material.    Providing step of sample of iron disilicide (104)    Combining step of sample of iron disilicide and binding material (106)    Providing step of substrate unit (108)    Depositing step of material mixture overlying surface region of substrate (110)    Forming step of thickness of material overlying substrate unit (114)