NOVELTY - The solar cell comprises a substrate (1), a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, which forms a pair with the translucent electrode. When light travels through each member from a first surface of the substrate, a surface opposite to the first surface is defined as a second surface. The power generation layer is formed at the second surface of the substrate. A thickness of the translucent electrode is 35 nm to 10 mu m. The translucent electrode is formed on one surface of the power generation layer.    USE - The solar cell is useful as an electrical power source of artificial earth satellites.    ADVANTAGE - The solar cell has high light absorption and conversion efficiency, excellent power generation properties and improved optical transparency as a light receiving element, and can be easily, rapidly and economically manufactured with high yield.    DETAILED DESCRIPTION - The solar cell comprises a substrate (1), a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, which forms a pair with the translucent electrode. When light travels through each member from a first surface of the substrate, a surface opposite to the first surface is defined as a second surface. The power generation layer is formed at the second surface of the substrate. A thickness of the translucent electrode is 35 nm to 10 mu m. The translucent electrode is formed on one surface of the power generation layer, and the other electrode is formed on the other surface of the power generation layer. The power generation layer comprises a group III nitride semiconductor layer having a pn-junction, a positive-type group III nitride semiconductor layer and a negative-type group III nitride semiconductor layer. The power generation layer is formed on a buffer layer (2), which is made of a group III nitride semiconductor. The buffer layer is formed at the second surface side of the substrate. One of the buffer layer and the group III nitride semiconductor layer has a compound semiconductor layer, which is made by a sputtering method. A positive-type electrode of the translucent electrode and an negative-type electrode of the another electrode are partially or entirely formed on the group III nitride semiconductor layer having the pn-junction. An INDEPENDENT CLAIM is included for a method for producing a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a sectional view of a solar cell.    Substrate (1)    Buffer layer (2)    Un-doped gallium nitride base layer (3)    Negative-type gallium nitride layer (50)    Positive-type gallium nitride layer. (51)