NOVELTY - A film comprises: an alloy formed of silver, copper, indium, gallium, aluminum or thallium, selenium, and sulfur or tellurium, having a specified composition.    USE - For forming a photovoltaic device (claimed).    ADVANTAGE - The chalcopyrite film comprising a specified composition of the silver, copper, indium, gallium, aluminum or thallium, selenium, and sulfur or tellurium for use as absorber layer in the formation of photovoltaic devices, allows deposition of the film onto a substrate at a relatively lower temperature of ( not greater than 500, preferably not greater than 450, especially not greater than 425) degrees C to form the layer; as compared to the prior art films formed of CuInSe2-based alloys and further including Ga or Al that although increases photovoltaic conversion efficiency by increasing the bandgap to more efficiently utilize incoming sunlight; increases melting and annealing temperatures of the compositions, such as to excess of 50O degrees C (preferably 525-60O degrees C), which makes the device fabrication difficult, when other device components are adversely affected by the elevated temperatures. Further, the photovoltaic device comprising chalcopyrite film formed of the composition (I) exhibits a short-circuit current (Jsc) that is greater than or equal to 0.8 mA/cm2 higher than that of an equivalent device employing an equivalent film that does not contain Ag.    DETAILED DESCRIPTION - A film (F1) has a composition AgwCu1-wInrGaxK'ySe2(1-z)Q'2z (I).    K'=Al and/or Tl;    Q'=S and/or Te;    w=0.01-0.75;    x=0.1-0.8;    r, y and z=0-1    Provided that: r+x+y is 1. INDEPENDENT CLAIMS are included for the following:    (1) a photovoltaic device comprising: the film (F1); and    (2) method for making a photovoltaic device involving: depositing onto a substrate components in amounts sufficient to provide the chalcopyrite film having the composition (I) at ( not greater than 500, preferably not greater than 450, especially not greater than 425) degrees C.