NOVELTY - Preparation of superhydrophobic antireflective silicon surface with micron and nanocomposite structure, comprises providing silicon chip and performing cleaning treatment to silicon chip surface; forming micron scale silicon island or grid structure on the surface of the silicon chip through alkali solution etching, reactive ion etching (RIE), light etching, or nanopressing and printing; and depositing gold or silver nanoions on surface of micron scale silicon island or grid structure via electroless deposition, electrodeposition, or chemical gas phase deposition.    USE - Method of preparing superhydrophobic antireflective silicon surface with micron and nanocomposite structure useful for solar energy cell, microfluidic core chip, and photoconducting device.    ADVANTAGE - Contacting angle of superhydrophobic antireflective silicon surface with static water is more than 150 degrees , while static rolling angle of water is less than 3 degrees . The superhydrophobic antireflective silicon surface with micron and nanocomposite structure has luminous reflectance of less than 3% in wavelength of 800-1100 nm.    DETAILED DESCRIPTION - Preparation of superhydrophobic antireflective silicon surface with micron and nanocomposite structure, comprises:    (A) providing silicon chip and performing cleaning treatment to silicon chip surface;    (B) forming micron scale silicon island or grid structure on the surface of the silicon chip through alkali solution etching, RIE, light etching, or nanopressing and printing;    (C) depositing gold or silver nanoions on surface of micron scale silicon island or grid structure via electroless deposition, electrodeposition, or chemical gas phase deposition, where thickness of deposited gold or silver nanoparticle is 5-15 nm; putting the silicon chip with silicon island or grid structure in hydrofluoric acid (HF)/hydrogen peroxide (H2O2)/water (H2O) solution to perform catalytic etching, preparing nanohole; and finally using nitric acid (30-50 mass%) for soaking for 5-10 minutes to wash off silver or gold nanoparticle, and obtain surface with micron and nanocomposite structure; and    (D) putting the obtained silicon chip with micron and nanocomposite structure surface in clean glass culture vessel; dipping in 0.5-1.0 ml fluorosilanizing agent at the bottom of the culture vessel; heating at 100-350 degrees C; keeping for 1-3.5 hours; and cooling down to room temperature.