TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The polymerization initiator has a melting point of not higher than 30 degrees C. The molecular weight of the polymerization initiator is at least 170. The composition contains the polymerization initiator in a ratio of at most 2 wt.%. The polymerization initiator contains at least one phenyl compound of formula (1a) or at least one diphenyl ketone compound of formula (2a). The radical-polymerizable monomer constituting the organic layer is at least one alkene compound of formula ((R8-CH=C(R7))m1-L1) or at least one ester compound of formula ((R10=C(R9)-C(=O)-O)m2-L2). The organic layer is formed by flash vapor deposition.R1 = 1-18C alkyl or 6-18C aryl (both optionally substituted), carbonyl or a substituent comprising any two or more such groups bonding to each other;R2-R4 = 1-18C alkyl or 6-18C aryl (both optionally substituted), amino, alkoxy, acyl, alkoxycarbonyl, alkylthio, arylthio, OH, halo or CN;n1, n2, n3 = 0-5;R7, R9 = H or CH3;R8, R10 = H;L1, L2 = 1-18C aliphatic hydrocarbon or 6-18C aromatic hydrocarbon (both optionally substituted), ether, imino, carbonyl or monovalent or polyvalent linking group comprising any of such groups bonding to each other in series; andm1, m2 = 1-6.Provided that but both n2 and n3 are not 0 at the same time. EXAMPLE - Teonex Q65FA (RTM: Polyethylene naphthalate film) was cut into 20 cm square pieces. An organic layer was formed on the side of the smooth surface of film, by flash vapor deposition of a mixed solution of butylethylpropanediol diacrylate (60 g), trimethylolpropane triacrylate (40 g), and Esacure TZT (RTM: A eutectic mixture of 2,4,6-tri-methylbenzophenone and 4-methylbenzophenone) (1.5 g) in Guardian 200 (RTM: Organic/inorganic laminate film formation device) at inner pressure of 3 Pa, and UV irradiation energy of 2 J/cm2. Subsequently an inorganic layer was formed using Guardian 200 (RTM: Organic/inorganic laminate film formation device) on the film. The inorganic layer was formed in a mode of aluminum film formation according to a reactive sputtering method under direct current pulse application, in which the target was aluminum and the reactive gas was oxygen. The formed inorganic layer (aluminum oxide) had a thickness of 60 nm. The water vapor permeability of the obtained gas-barrier films was 0.0020 g/m2/day.