TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Device: The organic photoelectric conversion layer has a bulk-heterostructure formed in a state where the compound (C1) and a fullerene or a fullerene derivative are mixed. The ratio of the fullerene or the fullerene derivative to the compound (C1) is at least 50 mol%. The organic photoelectric conversion layer is formed by a vacuum vapor deposition method. The transparent electrically conductive thin layer is an electrode layer from above which light is incident into the organic photoelectric conversion layer. The transparent layer includes a transparent electrically conductive oxide. The transparent electrically conductive thin layer is formed directly on the organic photoelectric conversion layer. An electric field of 10-4 V/cm to 1x 107 V/cm is applied between electrodes of the photoelectric conversion element. The electrically conductive thin layer, an organic photoelectric conversion layer, and a transparent electrically conductive thin layer, are stacked in this order.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The compound (C1) is a compound of formula (III). The fullerene is (C60) compound.R21-R23=H or a substituent (preferably R22 and R23 are both H);orR21+R22=a ring;L1 and L2=methine group (optionally substituted);n1=an integer of greater than or equal to 1 (preferably 1);R24-R37=H or a substituent (preferably H);ortwo of R24-R37 may combine together=a ring. Preferred Definitions:    X=O;    R'a-R'c=H.    Provided that:    (1) R'a-R'c at 4-position of respective rings, or at 2-, 3-, 5-, and 6-positions of the respective rings, are the same; and    (2) two of R'a-R'c at 4-position of the respective rings are H.    EXAMPLE - Amorphous indium tin oxide (ITO) of 30 nm was layer-formed on a complementary metal oxide semiconductor (CMOS) substrate by sputtering, and a pixel electrode was formed through patterning by photolithography such that one pixel was present on a photodiode (PD) on the CMOS substrate. On the ITO layer, the following layers were obtained by deposition of 4,4'-bis(9H-9-aza-tribenzo(a,c,e)cyclohepten-9-yl)-1,1'-biphenyl in 100 nm and co-deposition of 2-(2-tert-butyl-6-(2-(4-diphenylamino-phenyl)-vinyl)-pyran-4-ylidene)-malononitrile (T1) and fullerene (C60) in 100 nm and 200 nm, respectively, in terms of a single layer, and were formed by vacuum vapor deposition to form a photoelectric conversion layer, and a layer of amorphous ITO was further formed as an upper electrode to a thickness of 5 nm by sputtering to form a transparent electrode, to form a (test) solid-state imaging device. A comparative solid-state imaging device (control) was produced in the similar manner except that in the photoelectric conversion layer, only the compound (T1) was used alone (the fullerene (C60) was not used). The (test)/control) devices were tested for the following properties at appropriate voltage: (i) the external quantum efficiency at a wavelength of maximum sensitivity at a dark current of 400 pA/cm2 (relative value): (100)/(6); and (i) the relative response speed of photoelectric conversion elements (rising time from 0-98% signal strength) (relative value): (1)/(100). The results demonstrated that the (test) device performed imaging at high response speed high quantum efficiency.