NOVELTY - A multi-junction photovoltaic cell comprises at least two P-N junctions electrically connected to each other in series, each P-N junction (120) including P-type absorber layer (122) and N-type emitter layer (121), each P-type absorber layer comprising several alternating thin film layers of zinc telluride and lead telluride, having respective bandgaps when in bulk thickness and effective bandgap of each P-type absorber layer is between the respective bandgaps, where effective bandgap of absorber layer is different from that of at least one other absorber layer.    USE - As multi-junction photovoltaic cell for generating electricity.    ADVANTAGE - The P-N junctions is a combination of chemical bath deposition for the cadmium Sulfide (CdS) emitter layer and electrodeposition for the zinc telluride (ZnTe) and lead telluride (PbTe) layers. Both of these techniques are low-cost methods. the multi-quantum well structure offers a significant advantage in that compounds are used to tune the bandgap of the device rather than ternary alloys of the constituent elements. The composition of compounds can be kept constant and this assures reproducibility of film properties.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) multi-junction solar cell comprising a glass substrate (105) coated with a conductive layer (110); multi-cell tandem solar cell comprising several P-N junctions electrically connected to each other in series, each P-N junction including P-type absorber layer including a periodic array of alternating layers of first and second semiconductor materials electrodeposited over the glass substrate and N-type emitter layer; and    (2) forming a photovoltaic cell involving providing a glass substrate; forming a front contact layer on the glass substrate; forming a first P-N junction comprising an N-type emitter layer and a P-type absorber layer comprising a compositional superlattice, where the first P-N junction forming step includes electrodepositing a N-type emitter layer over the conductive layer; and electrodepositing several alternating layers of zinc telluride and lead telluride, where zinc telluride and lead telluride have respective bandgaps when in bulk thickness and the effective bandgap of the P-type absorber layer is between the respective bandgaps; and forming a back contact layer over the first P-N junction.    DESCRIPTION OF DRAWING(S) - The figure shows a side view of multi-junction solar cell.    Glass substrate (105)    Conductive layer (110)    P-N junction (120)    N-type emitter layer (121)    P-type absorber layer (122)