NOVELTY - A photovoltaic coating (102) comprises a semiconductor layer (104) containing semiconductor elements (preferably silicon particles) (106) between bottom metal-semiconductor compounds (108) and upper metal-semiconductor compounds (110). The upper metal-semiconductor compounds exist at uppermost boundary portions between the semiconductor elements and not over uppermost surfaces of the semiconductor elements.    USE - As a photovoltaic coating for photovoltaic collector generator or solar cells.    ADVANTAGE - The photovoltaic coating uses semiconductor elements such as silicon particles, and avoids the need of a crystal ingot. Consequently, the photovoltaic coating can be economically produced leading to the economic production of solar cells. The upper electrode of the metal-semiconductor compounds exist at uppermost boundary portions between semiconductor elements such as silicon particles, and not over uppermost surfaces of the semiconductor elements. As a result, the upper electrode does not inhibit, prevent or mitigate penetration of light into the photovoltaic coating, thus improving the photoelectric conversion efficiency per unit area of the photovoltaic coating. As the upper metal-semiconductor compounds exist at uppermost portions of the boundaries between the semiconductor elements (e.g. silicon particles), the height or thickness of the photovoltaic coating can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for making the photovoltaic coating, involving forming a semiconductor layer containing semiconductor elements over a conductive layer; forming first metal-semiconductor compounds at a bottom surface of the semiconductor layer; and forming second metal-semiconductor compounds at uppermost boundary portions between the semiconductor elements.    DESCRIPTION OF DRAWING(S) - The figure shows a cross sectional view of a portion of photovoltaic coating.    Photovoltaic device (100)    Photovoltaic coating (102)    Semiconductor layer (104)    Semiconductor elements (106)    Bottom metal-semiconductor compounds (108)    Upper metal-semiconductor compounds (110)