TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The types of metal can include: ferromagnetic metals; paramagnetic metals; semiconductor materials; and other types of metals.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Material: The organo-metallic hybrid material is conductive, optically transparent, and dissolved in a solvent to form a solution of the organo-metallic hybrid material. The organo-metallic hybrid material is formed into a thin film on a substrate using a deposition process, where the thin film is patterned into nanostructures through nano-imprint lithography (NIL) process. The organo-metallic hybrid material is formed into macroscale films or bulk materials with thicknesses greater than or equal to 1 mm. The organo-metallic hybrid material further comprises an additive including leveling agent, wetting agent and adhesion promoter; a silicon-based compound comprised of at least one unsaturated double bond, where the silicon-based compound is integrated with the organo-metallic hybrid material to form an organo-metallic semiconductor material. The photosensitive organo-metallic hybrid material is formed into a thin film on a substrate using a deposition process, where the thin film is imageable, and the thin film is directly patterned and developed into microstructures or nanostructures through a photolithography process without using an additional photoresist layer. In the photosensitive hybrid material, the thin film is patterned into microstructures or nanostructures through a stamping process. In the photosensitive organo-metallic hybrid material, a first region of the thin film is directly patterned and developed into microstructures or nanostructures through a photolithography process without using an additional photoresist layer; and a second region of the thin film is patterned into microstructures or nanostructures through nano-imprint lithography (NIL) process. Preferred Components: The type of metal element in the organo-metallic compound is chosen based in part on a function of the organo-metallic hybrid material. The solution of the organo-metallic hybrid material has a viscosity range compatible with forming a thin film of the organo-metallic hybrid material on a substrate using one of the following techniques: spin-coating; spray-coating; and dip-coating. The thin film is patterned into microstructures or nanostructures through one of: a stamping process; and a photolithography process. The substrate can include: a wafer substrate; and a specimen substrate. The thin film can have thickness of 1 nm to 1000 mu m. The thickness of the thin film can be controlled in part by the weight percentage ratio of the organo-metallic hybrid material to the solvent. A thinner thin film is obtained by decreasing the weight percentage ratio of the organo-metallic hybrid material to the solvent. Upon curing, the thin film acts as an etch mask layer during an etching process, where a selectivity of the etch mask layer is tunable and is determined in part by a ratio of the metal content to the organic content in the organo-metallic hybrid material, and the metal type. The thin film is cured through a curing process, where the polymerized thin film is chemically resistant to: hydrochloric acid; hydrofluoric acid; nitric acid; concentrated sulfuric acid; CHF3, CF4 or SF6 gas; and other wet or dry etchants. The thin film is metallized by removing the organic contents of the thin film. The unsaturated double bond can include (meth)acrylate compounds. The organo-metallic compound is composed of more than one type of metal element. The cross-linking agent can include: a silsesquioxane oligomer; and any other suitable aromatic or aliphatic cross-linking agent. Preferred Method: The step of forming the solution involves dissolving the organo-metallic hybrid material in a solvent. The step of forming the thin film on the substrate involves using one of the following coating processes to coat the solution of the organo-metallic hybrid material on the substrate: spin-coating; spray-coating; and dip-coating. The method (m1) and (m2) both further involves controlling the thickness of the thin film by controlling at least one process condition of the coat process (preferably weight percentage ratio of the organo-metallic hybrid material to the solvent); curing the patterned organo-metallic nano structures, so that the cured and patterned organo-metallic nanostructures act as an etch mask layer during an etching process, where a selectivity of the etch mask layer is tunable and is determined in part by a ratio of the metal content to the organic content in the organo-metallic hybrid material, and the metal type; forming the organo-metallic hybrid material into macroscale films or bulk materials with thicknesses greater than or equal to 1 mm; depositing a metal layer over the patterned organo-metallic nanostructures by using a deposition process; metallizing the patterned organo-metallic nanostructures by removing the organic contents of the patterned organo-metallic nanostructures; and integrating a silicon-based compound comprised of at least one unsaturated double bond into the organo-metallic hybrid material to form an organo-metallic semiconductor material. The method (m1) further involves synthesizing the organo-metallic hybrid material by formulating the organo-metallic compound and cross-linking agent. The patterning step involves use of a nano-imprint lithography (NIL) process; or a stamping process. The metallizing the patterned organo-metallic nanostructures involves treating the patterned organo-metallic nanostructures with an oxygen plasma process to remove the organic content from the patterned organo-metallic nanostructures, where the oxygen plasma process does not remove the metal content from the patterned organo-metallic nanostructures. Prior to receiving the solution, the method (m2) further involves receiving a photosensitive organo-metallic hybrid material; and forming a solution of the photosensitive organo-metallic hybrid material. The exposing step involves use of a single wavelength exposure light or a broadband exposure light. The method (m1) involves patterning microstructures and nanostructures by obtaining a thin film on a substrate, where the thin film is photosensitive; patterning a first region of the thin film into microstructures or nanostructures by using a nano-imprint lithography (NIL) process; exposing a second region of the thin film with an exposure light, thus printing structures onto the second region of the thin film; and developing the exposed thin film to obtain patterned structures in the second region of the thin film, where patterning the second region of the thin film does not require using an additional photoresist layer or etching the thin film.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The photoactive material can include a free radical generator; or other photosensitive materials capable of inducing polymerization when exposed to a light source. The photoactive organic polymer can respond to a single wavelength exposure light or a broadband exposure light. EXAMPLE - Pb(II) Acrylate (1.4 wt.%) was dissolved in 2-methoxyethanol (28 wt.%) in a brown bottle with a magnetic stirrer for 5 minutes or until the solution was completely clear. 3-(Trimethoxysilyl) propyl methacrylate (TMOME) (28 wt.%), trimethylolpropane (27 wt.%), and less than 5 wt.% of 3-aminopropyl-triethoxysilane and PolyFox TB (RTM: polymeric reactive fluorosurfactant) were then added to the Pb(II) acrylate solution. The solution was synthesized at room temperature with stirring until it became completely clear. Under yellow light, Irgacure 2022 (RTM: free radical generator) (12 wt.%) photoactive compound was added to the mixture. The resulting solution remained transparent. No phase separation or instability was observed for extended period of time.