TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preparation (claimed): The additive is prepared by reacting the isothiocyanates of formulae (FG1)n-X1-NCS and (FG2)m-X2-NCS; or reacting amine compounds of formulae (FG1)n-Ar'1-NH2 and (FG2)m-Ar'2-NH2. Preferred Component: The additive is compound of formulae (FG1)n-Ar"1-NH-C(=S)-NH-R-NH-C(=S)-NH-Ar"2-(FG2)m (I), (FG1)n-Het1-NH-C(=S)-NH-R-NH-C(=S)-NH-Het2-(FG2)m (II) or (FG1)n-Ar"1-NH-C(=S)-NH-R-NH-C(=S)-NH-Het2-(FG2)m (III), preferably compound of formula (IV).X1, X2, FG1, FG2, m, n=H2N-R-NH2;Ar'1, Ar'2, FG1, FG2, m, n=SCNR- NCS;Ar"1, Ar"2=phenylene or naphthylene;Het1, Het2=pyridylene or quinolinylene;andn'=2-12.    TECHNOLOGY FOCUS - METALLURGY - Preferred Components: The metal plating composition comprising plating species having copper plating species, copper and indium plating species, copper, indium and gallium plating species, copper, indium and selenium plating species, copper, indium and sulfur plating species, copper, indium, gallium and selenium plating species, copper, indium, gallium and sulfur plating species and copper, indium, gallium, selenium and sulfur plating species. The copper plating species comprises copper sulfate, copper sulfamates and copper methane sulfonates and indium plating species are indium sulfamates and indium methane sulfamates. Preferred Content: The copper and indium plating species in the composition comprises molar ratio of copper:indium of 1:0.1-50 (preferably 1:1-5) and copper and selenium plating species has molar ratio of copper:selenium of 1:0.01-40 (preferably 1:1-5). EXAMPLE - A 15x 15 cm2 molybdenum float glass material was pre-cleaned using mild alkaline, slightly foaming cleaner, having carbonate, silicates, phosphates, tensides and biodegradable chelating agent for 180 seconds at 70 degrees C. A metal plating solution was prepared from 1M sulfamic acid, 1M sodium hydroxide, 0.3M dinatrium tartrate, 1mM selenium(IV)-dioxide, 20 mM indium sulfamate, 9 mM copper sulfamate, 40 mg/l additive of formula (IV) and 20 mu l/l Lutensit TC-CS40(RTM: tenside). The substrate was immersed into metal plating solution and copper/indium/selenium (Cu/In/Se) alloy was electrolytically deposited on substrate at 25 degrees C, pH 3.2, current density 1.3 Angstrom /dm2, high hydrodynamic/electrolyte flow up to 10 m3/hour, hole nozzle array - needed for high deposition speed of 3 minutes for 1.5 Pm solar cell absorber, and inert anode.