NOVELTY - The method comprises supplying (250) grooves in a semiconductor wafer, dispensing (252) dopant liquid into the grooves, heating the wafer in a high temperature application for a duration that diffuses the dopant into the wafer, and dispensing metallization material that contains liquid into the grooves through a capillary tube thus creating a patterned diffusion layer at metallization locations. The capillary tube contacts the wafer directly. The grooves are provided in groups of two adjacent grooves. The metallization material is dispensed into portions of two grooves.    USE - The method is useful for providing a solar cell with a patterned diffusion layer.    ADVANTAGE - The method is capable of precisely, easily, reliably and repeatably providing the dopant in the locations where it is needed for metallization without requiring use of an additional mask or screen or other patterning step and/or alignment step, can provide a selective emitter with more highly doped regions using only a single high temperature processing step, and provides enhanced deep doping without requiring a complex patterning step.    DETAILED DESCRIPTION - The method comprises supplying grooves (250) in a semiconductor wafer, dispensing (252) dopant liquid into the grooves, heating the wafer in a high temperature application for a duration that diffuses the dopant into the wafer, and dispensing metallization material that contains liquid into the grooves through a capillary tube thus creating a patterned diffusion layer at metallization locations. The capillary tube contacts the wafer directly. The grooves are provided in groups of two adjacent grooves. The metallization material is dispensed into portions of two grooves of any single group of grooves. The two adjacent grooves comprise three grooves. The wafer comprises a p-type semiconductor substrate, the dopant is present such as to create an n+-type and p+-type semiconductor and the diffusion layer comprises a solar cell emitter and a solar cell back surface field region respectively. The wafer comprises an n-type semiconductor substrate, the dopant is present such as to create a p+-type semiconductor and n+-type semiconductor and the diffusion layer comprises a solar cell emitter and a solar cell back surface field region respectively. Before the step of diffusing the dopant into the wafer, limited availability dopant is deposited (253) to the wafer by spraying, misting and printing a dopant containing liquid. The step of providing limited availability dopant comprises depositing a dopant glass using a method of sputtering, evaporation, plasma enhanced chemical vapor deposition, vacuum chemical vapor deposition, and atmospheric pressure chemical vapor deposition. The wafer is exposed to a doping gas during the step of diffusing the dopant into the wafer in a high temperature application. A region of concave texture is provided in the semiconductor wafer to enhance light trapping characteristics of the wafer as compared to a flat surface wafer. The concave texture comprises a field of pits. An INDEPENDENT CLAIM is included for a solar cell.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of flow-chart of a process for applying dopant selectively to a workpiece wafer.    Supplying grooves in wafer for metallization (250)    Dispensing dopant liquid into grooves (252)    Depositing limited availability dopant (253)    Heating to high temperature to change diffusion profile (254)    Lightly diffusing in phosphorus oxychloride atmosphere. (255)