NOVELTY - A silicon crystal with low oxygen is prepared by feeding raw material into a furnace, and feeding inert gases into the furnace before the silicon raw material smelts; feeding and adjusting reducibility gas into the furnace; growing the silicon crystal through crystal pulling method in the furnace while keeping vacuum degree at 200-2000 Pa and keeping flow rate of the inert gas and adjusting the flow rate of the reducibility gas; and treating and discharging the exhaust gas from the furnace after the reaction of the reducibility adjusting gas and the oxygen in the silicon solution.    USE - Method for preparing a silicon crystal for use in solar photovoltaic applications    ADVANTAGE - The method improves the axial direction distribution of the oxygen content of the silicon crystal, reduces the photo induced damping effect, and improves the transferring efficiency between light and electricity of the boron doping silicon crystal.    DETAILED DESCRIPTION - Preparation of silicon crystal with low oxygen comprises:    (A) feeding raw material into a furnace, and feeding inert gases into the furnace before the silicon raw material smelts to adjust vacuum degree in the furnace to 200-1500 Pa, where the inert gas is helium gas, argon and/or nitrogen;    (B) feeding and adjusting reducibility gas into the furnace to adjust vacuum degree in the furnace to 200-2000 Pa, where the reducibility gas is tetrafluoromethane, carbon monoxide, hydrogen gas, methane, ethyne, or silane;    (C) growing the silicon crystal through crystal pulling method in the furnace while keeping vacuum degree at 200-2000 Pa and keeping flow rate of the inert gas and adjusting the flow rate of the reducibility gas;    (D) discharging the exhaust gas from the furnace after the reaction of the reducibility adjusting gas and the oxygen in the silicon solution, and treating and discharging the exhaust gas; and    (E) stopping the feeding of reducibility gas when the silicon crystal growing in the furnace is finished, and feeding only the inert gases until the furnace cools down.    An INDEPENDENT CLAIM is included for a growing equipment of a silicon crystal with low oxygen.