NOVELTY - A solar cell is made by, depositing on one side of a first conductivity type doped crystalline silicon wafer, an intrinsic amorphous (a)-silicon:hydrogen buffer layer and a second conductivity type doped a-silicon:hydrogen layer; depositing a surface passivating anti-reflection coasting on opposite side; applying a mask with a grid opening on doped a-silicon:hydrogen layer; removing doped a-silicon:hydrogen layer not covered by mask; depositing another intrinsic buffer layer of a-silicon:hydrogen; and depositing a first conductivity type doped a-silicon:hydrogen layer.    USE - Method of manufacturing solar cell (claimed).    ADVANTAGE - The method is more efficient and produces an innovative design where both emitter and back surface field are formed by an amorphous/crystalline silicon heterostructure. The grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, providing a good anti-reflection coating.    DETAILED DESCRIPTION - Manufacture of a solar cell comprises depositing on one side of a first conductivity type doped crystalline silicon wafer, a first intrinsic amorphous-silicon:hydrogen (a-Si:H) buffer layer followed by a second conductivity type doped a-Si:H layer; depositing a surface passivating anti-reflection coasting on opposite side; applying a mask with a grid opening on the doped a-Si:H layer; dry etching to remove the doped a-Si:H layer not covered by the mask; and while maintaining the mask in position, depositing another intrinsic buffer layer of a-Si:H, and depositing a first conductivity type doped a-silicon:hydrogen layer. A first contact material layer is deposited on the first conductivity type doped a-silicon:hydrogen layer, while maintaining the mask in position. Another mask is applied, and through this mask, another contact material is deposited on the second conductivity type doped a-silicon:hydrogen layer. The application of the second mask is performed by rotating the first mask over 180 degrees on the wafer. The first conductivity type is p-type and the second conductivity type is n-type, or vice versa. The surface passivating anti-reflection coating is an a-Si:H/silicon nitride double layer. The processing is performed at temperature below 300 degrees C.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic view of the solar cell.