NOVELTY - The silicon (3) purification process comprises continuously flowing silicon in a channel (4) whose free surface is exposed to plasma (20), performing silicon oxidation treatment in upstream of the channel and silicon deoxidation treatment in downstream of the channel, and controlling the flow of silicon in inlet and/or outlet of the channel. Plasma torches (2) generating plasma jets are disposed in staggered rows above the channel with respect to the free surface of silicon such that the plasma jets seals the length of the channels.    USE - The process is useful for purifying silicon by exposure of liquid silicon to plasma, where the purified silicon is useful for photovoltaic solar cell.    ADVANTAGE - The process is capable of simply, economically and rapidly purifying the silicon without any cargo operations, and avoids the contamination of the purified silicon in the tank.    DETAILED DESCRIPTION - The silicon (3) purification process comprises continuously flowing silicon in a channel (4) whose free surface is exposed to plasma (20), performing silicon oxidation treatment in upstream of the channel and silicon deoxidation treatment in downstream of the channel, and controlling the flow of silicon in inlet and/or outlet of the channel. Plasma torches (2) generating plasma jets are disposed in staggered rows above the channel with respect to the free surface of silicon such that the plasma jets seals the length of the channels. The length (L) and width (l) of the channel is related to the variation of impurity concentration by a relation, C/C0=exp((-1/k)(lL/Q)), where C0 is the initial impurity concentration and k is time constant for purification. The silicon oxidation treatment is carried out by injecting oxygen, hydrogen and/or water vapor in the plasma. The silicon deoxidation treatment is carried out by exposing argon or argon-hydrogen. The channel is arranged in a circular tank equipped with baffle plates. The tank is exposed to plasma generated by the torch, and the plasma seals a surface whose diameter is greater than or equal to the tank. An INDEPENDENT CLAIM is included for a device for the purification of silicon.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a device for purification of silicon.    Device (1)    Plasma torches (2)    Silicon (3)    Channel (4)    Plasma. (20)