NOVELTY - The method involves preparing a patterned substrate. A multi-layer structure is formed on the substrate that is made of any one of sapphire, silicon, silicon carbide, gallium nitride, zinc oxide, product of scandium, aluminum and magnesium oxide, yttrium-stabilized zirconia, strontium cuprite oxide, lithium gallium oxide, lithium aluminum oxide, product of gallium and arsenic, and glass. A passivation layer is formed by an atomic layer deposition and/or plasma enhanced atomic layer deposition process to cover the multi-layer structure.    USE - Method for manufacturing a photoelectric element for an optoelectronic device such as an organic LED, organic solar cell, inorganic LED, inorganic solar cell, photo-detector and a laser diode (all claimed).    ADVANTAGE - The method provides better surface passivation effect for manufacturing better photoelectric element. The method provides low process temperature, prevents the optoelectronic element from being damaged and reduces fault and/or damage caused by high temperature, thus improving the process reliability.    DETAILED DESCRIPTION - The passivation layer is made of any one of aluminum oxide, aluminum nitride, aluminum phosphide, aluminum aresenic, aluminum titanium oxide, aluminum chromium oxide, aluminum zirconium oxide, aluminum hafnium oxide, bismuth titanium oxide, barium sulfide, barium titanium oxide, cadmium sulfide, cadmium selenium, cadmium tellurium, calcium sulfide, calcium fluoride, copper gallium sulfide, cobalt oxide, copper oxide, cerium oxide, iron oxide, gallium nitride, gallium arsenic, gallium phosphide, gallium oxide, hafnium oxide, hafnium nitride, mercury tellurium, indium phosphide, indium arsenic, indium oxide, indium sulfide, indium nitride, lanthanum aluminum oxide, lanthanum sulfide, lanthanum oxide, lanthanum cobalt oxide, lanthanum nickel oxide, lanthanum manganese oxide, molybdenum nitride, molybdenum oxide, magnesium oxide, manganese oxide, nickel oxide, niobium nitride, niobium oxide, lead sulfide, platinum oxide, silicon nitride, silicon oxide, silicon carbide, tin oxide, antimony oxide, strontium oxide, strontium titanium oxide, strontium sulfide, product of strontium and selenium, strontium fluoride, tantalum oxynitride, tantalum nitride, tungsten trioxide, titanium zirconium oxide, titanium oxide, titanium silicon oxide, titanium nitride, titanium hafnium oxide, tungsten nitride, yttrium oxysulfide, yttrium oxide, zinc telluride, zirconium oxide, zirconium nitride, zirconium silicate, zinc fluoride, zinc selenium or zinc sulfide. An INDEPENDENT CLAIM is also included for a photoelectric element.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a method for manufacturing a photoelectric element.'(Drawing includes non-English language text)'