TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The sensitizing dye contains pigment having different lowest unoccupied molecular orbital levels. Preferred Compound: The sensitizing dye is a pigment of formula (I) or (II).X11-X14, X21-X26=O, S or selenium atom;R11-R13,R21-R23=H, halogen, alkyl, cycloalkyl, alkenyl, aryl, heterocyclic, cyano, nitro, hydroxyl, mercapto, carboxyl, carbonyl, oxycarbonyl, carbamoyl, alkoxy, heterocyclic oxy, carbonyloxy, urethane, sulfonyloxy, sulfonyloxy, amino, sulfonyl amino, sulfamoyl amino, acyl amino, ureido, sulfonyl, sulfamoyl, alkylthio, arylthio, or heterocyclic thio, R12, R13, R22 and R23 optionally combine to form ring structure;R14=-COOH or -PO3H2;R24,R26=H, -COOH, or -PO3H2;L11,L21, L22=methylene, ethylene or propylene;R15,R25= (un)substituted alkyl;andn=1-4.Preferred Process: The semiconductor composition in which the energy level of the conduction band differs is formed of metal dope. Then, the semiconductor composition contains metal dope of element having different energy level. The semiconductor composition having different energy level of the conduction band is semiconductor composition having different doped amount of metal depend. The semiconductor composition has titanium oxide composition, and titanium oxide has lowest energy level of conductor. EXAMPLE - Acetic acid (in g) (6) was dripped at tetra-isopropoxy titanium (28), heated at 80 degrees C for 5 hours and mixed with water to obtain dispersion liquid. The obtained mixture was dispersed, mixed with Emulgen 120 (RTM: activator) (0.5) and polyethylene glycol (20) having molecular weight of 20000 and dispersed in roll mill, to obtain particulate semiconductor dispersion paste. A transparent conductive glass substrate was coated with stannic oxide doped with fluorine, to form conductive layer (12). A semiconductor film was formed on the target material using titanium oxide. Then, the semiconductor paste was coated by screen-printing. The titanium oxide was coated after drying, to form light refection layers. The obtained semiconductor porous membrane had thickness of 12 mu m and light reflection layer having thickness of 2 mu m. The substrate is then dried at 150 degrees C for 10 minutes. The circumference of the substrate was scraped such that the semiconductor porous membrane formed has effective area of 0.25 cm2. Then, the substrate is baked at 500 degrees C for 60 minutes, to form semiconductor porous membrane layer containing titanium oxide on substrate. The obtained substrate is immersed in 3x 10-3 mol/l of ruthenium complex pigment of formula (1) and solution of acetonitrile and t-butanol, cooled to 80 degrees C for 24 hours. Then, the semiconductor porous membrane layer was washed, vacuum-dried and absorbs the pigment. The semiconductor porous layer and cathode were laminated using spacer and sealing agent. The electrolyte solution containing acetonitrile and mixed solvent was injected into cathode. The anti reflective film was laminated with light-receiving surface of the glass substrate, to form dye-sensitized solar cell. The obtained cell had short circuit current of 10.2 mA/cm2, short circuit voltage value of 0.673 V, fill factor of 0.68 and photoelectric-conversion efficiency of 4.67%.    TBA=tetrabutyl ammonium;and    NCS=isocyanate.