NOVELTY - The method comprises applying an insulating film to a semiconductor substrate (10), applying a thick film composition to the insulating film, and firing the semiconductor, insulating film and thick film composition. The thick film composition comprises conductive materials, inorganic binders, and organic vehicle, where 1-15% of the inorganic components are submicron particles. The 85-99% of the inorganic components has a diameter (d50) of 1.5-10 microns. The submicron particles have a diameter (d50) of 0.1-0.6 microns. The inorganic components have a bimodal size distribution.    USE - The method is useful for manufacturing a semiconductor device such as a solar cell or a photodiode.    ADVANTAGE - The method is capable of effectively manufacturing the solar cell with high efficiency, adequate stability and improved electrical performance by efficiently removing the organic medium during the drying and firing of the semiconductor device.    DETAILED DESCRIPTION - The method comprises applying an insulating film to a semiconductor substrate (10), applying a thick film composition to the insulating film, and firing the semiconductor, insulating film and thick film composition. The thick film composition comprises conductive materials, inorganic binders, and organic vehicle, where 1-15 % of the inorganic components are submicron particles. The 85-99 % of the inorganic components has a diameter (d50) of 1.5-10 microns. The submicron particles have a diameter (d50) of 0.1-0.6 microns. The inorganic components have a bimodal size distribution. The thick film composition further comprises additives. The inorganic components are 70-95 wt.% of the total composition.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a fabrication process of a semiconductor device.    Silicon substrate (10)    Diffusion layer (20)    Silicon nitride film (30)    Positive layer (40)    Aluminum back electrode (61)    Silver and/or aluminum back electrode (71)    Silver front electrode. (501)