TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The field effect transistor device has a structure selected from top-gate bottom-contact structure, bottom- gate top-contact structure, top-gate top-contact structure, and bottom-gate bottom- contact structure; and comprises a dielectric material. The photovoltaic device comprises a p-type semiconducting material adjacent to the polymer(s) (I). ORGAINIC CHEMISTRY - Preferred Composition: The composition (C1) further comprises at least one additive. Preferred Components: The liquid medium comprises water or an organic solvent. The additives are selected from viscosity modulators, detergents, dispersants, binding agents, compatiblizing agents, curing agents, initiators, humectants, antifoaming agents, wetting agents, pH modifiers, biocides, and bactereriostats. The dielectric material comprises an organic dielectric material, or a hybrid organic/inorganic dielectric material.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The dielectric material comprises an inorganic dielectric material.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The perylene polymer is selected from 16 compounds as given in the specification e.g. polymers of formulae (Ia) and (Ib) as given in the specification.R3a and R4a=H, halo, -CN, -NO2, -OH, -CHO, -C(O)-1-10C-alkyl, -C(O)-6-14C-aryl, -C(O)OH, -C(O)-O-1-10C-alkyl, -C(O)-O-6-14C-aryl, -C(O)NH2, -C(O)NH-1-10C-alkyl, -C(O)N(1-10-alkyl)2, -C(O)NH-6-14C-aryl, -C(O)N(1-10C-alkyl)-6-14C-aryl, -C(O)N(6-14C-aryl)2, 1-40C (halo)alkyl, 2-40C alkenyl, 2-40C alkynyl, 1-40C alkoxy, 1-40C alkylthio, -Y'-3-14C-cycloalkyl, -Y'-6-14C-aryl, -Y'-3-14-membered cycloheteroalkyl group, or -Y'-5-14-membered heteroaryl (all having the 1-40C alkyl, 2-40C alkenyl, 2-40C alkynyl, 3-14C cycloalkyl, 6-14C aryl, 3-14 membered cycloheteroalkyl, and 5-14 membered heteroaryl groups optionally substituted by 1-5 substituents selected from halo, -CN, 1-6C (halo)alkyl, and 1-6C alkoxy) (preferably H, or 1-30C (halo)alkyl);Y'=a divalent 1-6C (halo)alkyl, or a covalent bond;x=a real number selected from 0 to less than 1;T1=a group of formula (iii).Preparation (disclosed): No general method for the preparation of the perylene polymers (I) is given. Preferred Method: The step of depositing the composition (C1) involves printing, spin coating, drop-casting, zone casting, dip coating, blade coating, and/or spraying. The printing is selected from gravure printing, inkjet printing, and flexo printing. Preferred Definitions:    Ar=thiophen-2,5-diyl, (2,2')bithiophen-5,5'-diyl, (2,2';5',2'';5'',2''')quaterthiophen-5,5'''-diyl (all having the thiophene ring substituted at the 3 and 4 positions by a group R4); (1,3,4)thiadiazol-2,5-diyl, (5,5')bithiazol-2,2'-diyl, (5,5')bithiazol-5,5'-diyl (all having the thiadiazole ring substituted at the 4 position by a group R4); or (2,2')bithiazole (substituted at the 5 and 5'positions by substituted thiophen-2-yl) (having the thiophene ring substituted at the 3 and 4 positions by a group R4; and the thiadiazole ring substituted at the 4 position by a group R4);    R4=halo, -CN, 1-6C (halo)alkyl, or 1-6C alkoxy;    R1, R2 and R5=-C6H13, -CH(CH3)-(CH2)3-CH3, -CH2-CH(C2H5)-(CH2)3-CH3, -CH2-CH(C6H17)(C10H21), -CH2-CH(CH3)-(CH2)3-CH3, -(CH2)2-CH(CH3)-CH2-CH2-CH=C(CH3)2, -CH(CF3)-(CH2)3-CH3, -CH(CH3)-phenyl, -CH(CH3)-(4-methyl-phenyl), -phenyl (substituted at the 4 position by C6H13, C12H25, -(CH2)2-CH(CH3)-CH2-CH2-CH=C(CH3)2, -O-C12H25, 2,3,4,5,6-pentafluoro-phenyl, -O-C12H25, 5-hexyl-2,3,5,6-tetrafluoro-phenyl, -C(O)-phenyl, -CH2-phenyl, or -C2H4-phenyl); biphenyl (optionally substituted at the 4'position by -C6H17, or -(CH2)2-CH(CH3)-CH2-CH2-CH=C(CH3)2); 2,3,5,6-tetrafluoro-(4-hexyl-phenyl)phenyl, benzyl, 4-n-butyl-benzyl, 4-sec-butyl-benzyl, or benzyl (substituted at the 4 position by -O-(CH2)2-CH(CH3)-CH2-CH2-CH=C(CH3)2);    n=4-1000.    WIDER DISCLOSURE - Also disclosed as new are perylene polymers of formula -(M1-M2a)n- (I').    M2a=-Z-(Ar)m-Z-, -( pi -2)-(Ar)m-( pi -2)-, Z-( pi -2)-(Ar)m-( pi -2)-Z-, or -Z-(Ar)m-( pi -2)-(Ar)m-Z-.    EXAMPLE - A mixture of (1,7; 1,6)-dibromoperylene-3,4:9,10-perylenetetracarboxylic acid dianhydride (PDA-Br2) (0.44 g), 2-octyldodecylamine (0.71 g), ortho-xylene (3 ml), and propionic acid (1 ml) were stirred at 140 degrees C for 2 hours. Upon cooling to room temperature, most of solvents were removed in vacuum, and the residue was purified by column chromatography on silica gel to obtain N,N'-bis(2-octyldodecyl)-(1,7; 1,6)-dibromoperylene-3,4:9,10-bis(dicarboxiamide) (PDI2OD-Br2), as a red solid as product. Under argon, a mixture of PDI2OD-Br2 (113.9 mg), 5,5'-bis(trimethylstannyl)-2,2'-bithiophene (50.5 mg), and Pd(PPh3)2Cl2 (3.1 mg) in anhydrous toluene (6 ml) was stirred at 90 degrees C for 2 days. Bromobenzene (0.2 ml) was then added and the reaction mixture was maintained at 90 degrees C for an additional 12 hours. Upon cooling to room temperature, a solution of potassium fluoride (1 g) in water (2 ml) was added. This mixture was stirred at room temperature for 2 hours, and then worked up to obtain a dark solid that was further worked up to give poly((N,N'-bis(2-octyldodecyl)-3,4:9,10-perylene diimide-(1,7; 1,6)-diyl)-alt-5,5'-(2,2'-bithiophene)) (P(PDI2OD-T2)) as a deep blue solid (105 mg, yield =91.5%). Semiconductor films were prepared by spin-coating a solution in dichlorobenzene/chloroform (2:98 wt./wt.%, 3-10 mg/ml) onto n-doped Si/SiO2 (Ci = 11.5 nF/cm2) substrates, which had been pretreated with octadecyltrichlorosilane (OTS), followed by annealing at 110 degrees C under vacuum for 4 hours, to obtain bottom gate top-contact thin film transistor (TFT) device. It was observed that the transistor performance did not vary considerably (less than 10%) when the semiconductor films were annealed at different temperatures (110-240 degrees C). Au source and drain contacts were evaporated through a shadow mask onto the semiconductor layer. The gate region was accessed by an ohmic contact to the Si. The polymer was then evaluated for electrical measurements, which were performed both under high vacuum and under ambient conditions. The charge carrier mobility ( mu ) was calculated from typical current-voltage plots. The positive gate and source-drain voltages demonstrated that polymer could be n-channel semiconductor. Electron mobilities of 0.002 cm2 V-1 second-1 for bottom-gate top-contact P(PDI2OD-T2)-based TFTs was measured in vacuum.