NOVELTY - An etching liquid composition contains an aqueous solution containing an alkali. A metal film is selectively etched from a laminate comprising an amorphous oxide film and the metal film using the etching liquid composition. The metal film contains aluminum, aluminum alloy, copper, copper alloy, silver and/or silver alloy.    USE - Etching liquid composition is used for forming pattern, and for manufacturing liquid crystal display panel in fringe field switching mode and in-plane switching mode, semi-transmissive semi-reflective liquid crystal display panel and thin-film transistor (all claimed). Can also be used for manufacturing electronic component such as semiconductor element, integrated circuit and electrode, plasma display panel, electroluminescent light-emitting display device, touch panel and solar cell.    ADVANTAGE - The etching liquid composition has favorable selective etching characteristics.    DETAILED DESCRIPTION - An etching liquid composition contains an aqueous solution containing an alkali. A metal film is selectively etched from a laminate comprising an amorphous oxide film and the metal film using the etching liquid composition. The metal film contains aluminum, aluminum alloy, copper, copper alloy, silver and/or silver alloy. The laminate further comprises another metal film containing molybdenum, molybdenum alloy, titanium and/or titanium alloy. The alkali is ammonia. The etching liquid composition further contains an oxidizing agent such as hydrogen peroxide. The amorphous oxide film is a transparent conductive film or an amorphous oxide semiconductor film. The transparent conductive film contains ( alpha )-indium-tin oxide, indium-zinc oxide, zinc oxide or tin oxide. The amorphous oxide semiconductor film contains indium, gallium, zinc and/or tin.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the bottom-gate-type thin film transistor.    Glass (1)    Gate electrode (2)    Gate insulating layer (3)    Source electrode (4)    Drain electrode (5)