NOVELTY - A P-type silicon substrate having specific resistance of 0.05 Omega .cm is cut into silicon chip. The silicon chip is cleaned, and etched using silver nitrate and hydrogen fluoride to manufacture silicon nano wire array. 40% hydrogen fluoride is mixed with absolute ethyl alcohol, and porous silicon is etched. The etched silicon is annealed, and aluminum film is plated. The silicon nano-wire is preprocessed and put into water bath. The silicon nano-wire plated with nickel is washed, dried and annealed at 350 degrees C to obtain silicon nano-wire array with nickel film.    USE - Electroless nickel deposition on silicon nano-wire used for thermoelectric power device (claimed).    ADVANTAGE - The nickel deposited silicon nano-wire has high specific surface area and depth-to-width ratio, and provides thermoelectric power device having excellent thermoelectric emission efficiency.    DETAILED DESCRIPTION - A P-type silicon substrate having specific resistance of 0.05 Omega .cm is cut into a silicon chip having length of 1.5 cm and breadth of 1 cm. The silicon chip is cleaned, and etched in 35 mM mixed solution of silver nitrate and 20% hydrogen fluoride to manufacture silicon nano wire array by electrochemical etching. 40% hydrogen fluoride is mixed with absolute ethyl alcohol in volume ratio of 1-0.8, and porous silicon is etched using current having density of 40-80 mA/square.cm for 2 hours and 30 seconds. The etched silicon is quickly annealed for 2 minutes at 600 degrees C, and a metal aluminum film is plated on the surface of the porous silicon using electron beam evaporation as anode of thermoelectric power device. The silicon nano-wire is preprocessed with sodium dodecyl sulfate for 1 minute and put into 80 degrees C water bath and reacted for 30 minutes. The silicon nano-wire plated with nickel is washed with 80 degrees C deionized water, dried at 130 degrees C, and annealed for 30 seconds at 350 degrees C to obtain silicon nano-wire array with nickel film.