US2009197368-A1 -- US3480473-A   ;  US4144096-A   SUWA SEIKOSHA KK (SUWA);  HAMAZAWA KOGYO KK (HAMA-Non-standard);  SEIKO EPSON CORP (SHIH)   WADA S,  ISOBE Y;  US4171997-A   BBC BROWN BOVERI & CIE AG (BROV)   IRMLER H;  US4174561-A   SEMICON INC (SEMI)   HOUSE R E,  IRVIN R A,  KANE D F;  US4200472-A   UNIV CALIFORNIA (REGC)   CHAPPELL T T,  WHITE R M;  US4450316-A   KANEGAFUCHI KAGAKU KOGYO KK (KANF)   YOSHIHIRO H,  YOSHIHISA T;  US4578526-A   MATSUSHITA ELEC IND CO LTD (MATU)   NAKANO A,  MATSUMOTO H,  KOMATSU Y,  KURIBAYASH K,  IKEGAMI S;  US4830038-A   ATLANTIC RICHFIELD CO (ATLF)   ANDERSON A J,  BEZE N L;  US4897123-A   MITSUBISHI DENKI KK (MITQ)   MITSUI K;  US5273911-A   MITSUBISHI DENKI KK (MITQ)   SASAKI H,  MORIKAWA H,  SATOH K,  DEGUCHI M;  US5279682-A   MOBIL SOLAR ENERGY CORP (MOBI-Non-standard)   WALD F,  MURAD J;  US5374564-A   COMMISSARIAT ENERGIE ATOMIQUE (COMS)   BRUEL M;  US5626688-A   SIEMENS AG (SIEI)   PROBST V,  RIMMASCH J,  HARMS H;  US5966620-A   CANON KK (CANO)   SAKAGUCHI K,  YONEHARA T;  US5985742-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6048411-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6107213-A   SONY CORP (SONY)   TAYANAKA H;  US6146979-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US20040200520-A1   ;  US20070135013-A1   ;  US20070235074-A1   ;  US20070277874-A1   ;  US20080023061-A1   ;  US20080070340-A1   ;  US20080160661-A1   ;  US20080179547-A1   ;  US20080188011-A1   ;  US6184111-B1   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6190937-B1   CANON KK (CANO)   KATSUMI N,  TAKAO Y,  SHOJI N,  SAKAGUCHI K;  US6225192-B1   COMMISSARIAT ENERGIE ATOMIQUE (COMS)   ASPAR B,  BRUEL M,  POUMEYROL T;  US6229165-B1   NTT ELECTRONIC TECHNOLOGY KK (NITE)   IEDA N,  NAKAJIMA B,  SAKAI T,  MANO T,  AKAZAWA Y,  INO M,  INOKAWA H;  US6331208-B1   CANON KK (CANO)   NISHIDA A,  IWANE M,  SAKAGUCHI K,  YONEHARA T;  US6563133-B1   ZIPTRONIX (ZIPT-Non-standard)   TONG Q;  US6690014-B1   RAYTHEON CO (RAYT)   GOOCH R W,  SCHIMERT T R,  MCCARDEL W L,  RITCHEY B A;  US6530653-B2   PICOJET INC (PICO-Non-standard);  LE H P (LEHP-Individual);  LE T P (LETP-Individual);  TRAN L B (TRAN-Individual)   LE H P,  LE T P,  TRAN L B;  US7019339-B2   CALIFORNIA INST OF TECHNOLOGY (CALY)   ATWATER H A,  ZAHLER J M;  US7238622-B2   CALIFORNIA INST OF TECHNOLOGY (CALY)   ATWATER H A,  ZAHLER J M;  US7462774-B2   NANOSOLAR INC (NANO-Non-standard)   ROSCHEISEN M R,  SAGER B M,  PICHLER K;  US7842585-B2 -- JP2003017723-A   SHINETSU HANDOTAI CO LTD (SHHA)   ABE T,  YOKOKAWA I;  US3480473-A   ;  US4144096-A   SUWA SEIKOSHA KK (SUWA);  HAMAZAWA KOGYO KK (HAMA-Non-standard);  SEIKO EPSON CORP (SHIH)   WADA S,  ISOBE Y;  US4171997-A   BBC BROWN BOVERI & CIE AG (BROV)   IRMLER H;  US4174561-A   SEMICON INC (SEMI)   HOUSE R E,  IRVIN R A,  KANE D F;  US4200472-A   UNIV CALIFORNIA (REGC)   CHAPPELL T T,  WHITE R M;  US4450316-A   KANEGAFUCHI KAGAKU KOGYO KK (KANF)   YOSHIHIRO H,  YOSHIHISA T;  US4578526-A   MATSUSHITA ELEC IND CO LTD (MATU)   NAKANO A,  MATSUMOTO H,  KOMATSU Y,  KURIBAYASH K,  IKEGAMI S;  US4830038-A   ATLANTIC RICHFIELD CO (ATLF)   ANDERSON A J,  BEZE N L;  US4897123-A   MITSUBISHI DENKI KK (MITQ)   MITSUI K;  US5273911-A   MITSUBISHI DENKI KK (MITQ)   SASAKI H,  MORIKAWA H,  SATOH K,  DEGUCHI M;  US5279682-A   MOBIL SOLAR ENERGY CORP (MOBI-Non-standard)   WALD F,  MURAD J;  US5374564-A   COMMISSARIAT ENERGIE ATOMIQUE (COMS)   BRUEL M;  US5626688-A   SIEMENS AG (SIEI)   PROBST V,  RIMMASCH J,  HARMS H;  US5966620-A   CANON KK (CANO)   SAKAGUCHI K,  YONEHARA T;  US5985742-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6048411-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6107213-A   SONY CORP (SONY)   TAYANAKA H;  US6146979-A   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US20040200520-A1   ;  US20070135013-A1   ;  US20070235074-A1   ;  US20070277874-A1   ;  US20080023061-A1   ;  US20080070340-A1   ;  US20080160661-A1   ;  US20080179547-A1   ;  US20080188011-A1   ;  US6184111-B1   SILICON GENESIS CORP (SILI-Non-standard)   HENLEY F J,  CHEUNG N W;  US6190937-B1   CANON KK (CANO)   KATSUMI N,  TAKAO Y,  SHOJI N,  SAKAGUCHI K;  US6225192-B1   COMMISSARIAT ENERGIE ATOMIQUE (COMS)   ASPAR B,  BRUEL M,  POUMEYROL T;  US6229165-B1   NTT ELECTRONIC TECHNOLOGY KK (NITE)   IEDA N,  NAKAJIMA B,  SAKAI T,  MANO T,  AKAZAWA Y,  INO M,  INOKAWA H;  US6331208-B1   CANON KK (CANO)   NISHIDA A,  IWANE M,  SAKAGUCHI K,  YONEHARA T;  US6563133-B1   ZIPTRONIX (ZIPT-Non-standard)   TONG Q;  US6690014-B1   RAYTHEON CO (RAYT)   GOOCH R W,  SCHIMERT T R,  MCCARDEL W L,  RITCHEY B A;  US6530653-B2   PICOJET INC (PICO-Non-standard);  LE H P (LEHP-Individual);  LE T P (LETP-Individual);  TRAN L B (TRAN-Individual)   LE H P,  LE T P,  TRAN L B;  US7019339-B2   CALIFORNIA INST OF TECHNOLOGY (CALY)   ATWATER H A,  ZAHLER J M;  US7238622-B2   CALIFORNIA INST OF TECHNOLOGY (CALY)   ATWATER H A,  ZAHLER J M;  US7462774-B2   NANOSOLAR INC (NANO-Non-standard)   ROSCHEISEN M R,  SAGER B M,  PICHLER K