NOVELTY - Silica-based solar battery surface quantum-dot light-wave conversion layer is prepared by mixing silicon dioxide sol, quantum-dot nano-material at weight ratio of 5:2, stirring at room temperature for 3 hours to obtain quantum-dot light-wave conversion composite material, coating quantum-dot light-wave conversion composite material on solar cell battery surface, processing heating treatment under condition of vacuum with pressure less than 100 Pa or protection of inert gas, forming transparent light-wave conversion film layer on silicon solar battery surface, and heating at 4500 degrees C for 1 hour.    USE - Method for preparing silica-based solar battery surface quantum-dot light-wave conversion layer (claimed).    ADVANTAGE - The method has very high light transmittance, and can convert violet rays below 400 nm in solar light and ultraviolet light content into visible light within 400-700 nm; and improves photoelectric conversion rate of silica-based solar battery, has high light-wave conversion rate of quantum-dot light-wave conversion layer, simple production method and low cost.    DETAILED DESCRIPTION - Preparation of silica-based solar battery surface quantum-dot light-wave conversion layer comprises:    (A) mixing ethyl orthosilicate (1.27 mol/L), absolute ethyl alcohol, deionized water and hydrochloric acid (2 mol/L) at ratio of 1:2.5:0.8:0.025, using heat solvent method, chemical sol method, solidoid/liquidoid precipitation reaction method, self-assembly method or micro-shadow etching method to obtain sol solution of silicon dioxide;    (B) mixing cadmium chloride (CdCl2.2.5H2O), sodium sulfide (Na2S.9H20) and polyvinyl pyrrolidone (PVP) at mol ratio of 1:1:2x 10-3, stirring at room temperature for 2 hours, and obtaining cadmium sulfide (CdS) quantum-dot nano-material; mixing and reacting tellurium (Te) powder, CdCl2.2.5H2O, thioglycolic acid and sodium borohydride (NaBH4) aqueous solution at mol ratio of 2:1:5:2, stirring, reacting for 2 hours, and obtaining CdTe quantum-dot nano-material;and    (C) mixing silicon dioxide sol, quantum-dot nano-material at weight ratio of 5:2, stirring at room temperature for 3 hours to obtain quantum-dot light-wave conversion composite material, coating quantum-dot light-wave conversion composite material on solar cell battery surface, processing heating treatment under condition of vacuum with pressure less than 100 Pa or protection of inert gas, forming transparent light-wave conversion film layer on silicon solar battery surface, and heating at 4500 degrees C for 1 hour.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the preparation of silica-based solar battery surface quantum-dot light-wave conversion layer. (Drawing includes non-English language text).