NOVELTY - An organic thin film is made on substrate (97) by atomic layer deposition comprising simultaneously directing series of gas flows along parallel elongated channels. The series of gas flows comprises inert purge gas, second reactive gaseous material, and first reactive gaseous material(s) capable of reacting with substrate surface treated with second reactive gaseous material capable of reacting with surface treated with first reactive gaseous material to form thin film. The process is carried out at above atmospheric pressure. The temperature of substrate during deposition is below 250 degrees C.    USE - Process of making an organic thin film on a substrate for making a barrier layer protecting an electronic device from its surrounding atmosphere. The electronic device is integrated circuit; active-matrix display; solar cell; active-matrix imager; sensor; or radio frequency price, identification or inventory label. (All claimed)    ADVANTAGE - The process is compatible with spatially dependent atomic layer deposition; can be operated with continuous movement of a substrate being subjected to thin film deposition; is capable of conveying the support on, or as a web past the deposition device, preferably in an unsealed environment to ambient at substantially atmospheric pressure; is adaptable for deposition on a web or other moving substrate including deposition onto a large area substrate; and allows operation under atmospheric pressure conditions.    DETAILED DESCRIPTION - An organic thin film is made on a substrate (97) by atomic layer deposition comprising simultaneously directing a series of gas flows along parallel elongated channels. The series of gas flows comprises an inert purge gas, a second reactive gaseous material, and first reactive gaseous material(s) capable of reacting with the substrate surface treated with the second reactive gaseous material capable of reacting with the surface treated with the first reactive gaseous material to form the thin film. The first reactive gaseous material and/or the second reactive gaseous material are a volatile organic compound. The process is carried out at above atmospheric pressure. The temperature of the substrate during deposition is below 250 degrees C. The deposited organic thin film comprises greater than or equal to 20 atomic wt.%. The given area of the substrate is exposed to a gas flow in a channel for less than 100 milliseconds and relative movement of the substrate to a deposition device is at a speed greater than or equal to 0.1 cm/second. The volatile compounds can be vaporized at below 300 degrees C at atmospheric pressure.    DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional side view of a deposition device used in the process of making an organic thin film on a substrate.    Delivery head (10)    Streams or flows (92, 93, 95)    Substrate (97)    Coating head movement along substrate surface (98)    Gap (99)