NOVELTY - Making a solar cell contact and printed electronics circuit, each including a contact layer (510) and a bulk layer (530), involves ink-jet printing, onto a silicon wafer, at least a portion of which bears an antireflective coating, a first ink layer having a solids loading of 20-80 wt.%; and firing the wafer. The ink comprises glass frit, having an average particle size of less than 3 microns and a glass transition temperature of 200-700 degrees C. The glass frit fuses to form a glass and forms a contact layer to silicon.    USE - For making a solar cell contact and printed electronics circuit, each including a contact layer and a bulk layer for making solar cell and semiconductor devices.    ADVANTAGE - The contact and solar cell made by the process have low series resistance (Rs) and high shunt resistance (Rsh) to give high performances solar cells, as measured by efficiency and fill factor. The solar cell has improved cell efficiency that is achieved by low contact resistance between the fired front-contact ink and the silicon (Si) wafer, by using high sheet resistivity wafers, by print narrow lines to reduce shadow losses so that more front area is exposed to light, by increasing the number of lines per unit length using narrow lines without unduly increasing the overall shadow losses, by using conductors with low bulk resistivity and increased cross-sectional area, thereby fashioning narrow fingers with increased height.    DETAILED DESCRIPTION - Making a solar cell contact and printed electronics circuit, each including a contact layer (510) and a bulk layer (530), involves ink-jet printing, onto a silicon wafer, at least a portion of which bears an antireflective coating, a first ink layer having a solids loading of 20-80 wt.%; and firing the wafer. The ink comprises glass frit, having an average particle size of less than 3 microns and a glass transition temperature of 200-700 degrees C. The glass frit fuses to form a glass and forms a contact layer to silicon. The method further involves, after firing the wafer, forming a bulk layer by applying to the contact layer a second ink layer comprising metal, and firing the wafer a second time to make a sintered bulk layer. The bulk layer is deposited by plating, or by evaporation or direct writing. The contact and bulk layers are co-fired. The method further involves forming at least one groove in the silicon wafer prior to ink-jet printing the first phosphorus layer. The plating solution is ink-jet printed into the at least one groove.    DESCRIPTION OF DRAWING(S) - The figure shows a process flow diagram of the fabrication of the semiconductor device.    First contact layer (510)    Second contact layer (520)    Bulk layer (530)