NOVELTY - The method for atomic layer deposition on a surface of a continuously or intermittently moving flexible fixed substrate (6) using an atmospheric pressure glow discharge plasma, comprises conditioning the surface for atomic layer deposition by providing reactive surface sites, applying a precursor material to the surface in a concentration of 10-5000 ppm for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules, which are attached via the reactive sites to the surface of the substrate.    USE - The method is useful for depositing an atomic layer on a surface of a continuously or intermittently moving flexible fixed substrate using an atmospheric pressure glow discharge plasma to produce flexible photo-voltaic cells.    ADVANTAGE - The method is effective, accurate and continuous for thin film deposition of the atomic layer on the surface of the continuously or intermittently moving flexible fixed substrate with a very accurate control of film thickness and film quality thus producing high quality photo-voltaic cells.    DETAILED DESCRIPTION - The method for atomic layer deposition on a surface of a continuously or intermittently moving flexible fixed substrate (6) using an atmospheric pressure glow discharge plasma, comprises conditioning the surface for atomic layer deposition by providing reactive surface sites, applying a precursor material to the surface in a concentration of 10-5000 ppm for allowing reactive surface sites to react with precursor material molecules to give a surface covered by a monolayer of precursor molecules, which are attached via the reactive sites to the surface of the substrate, and applying a gas mixture to the surface covered with precursor molecules, where the gas mixture is generated in an atmospheric pressure glow discharge plasma remote from the substrate. The gas mixture comprises a reactive agent such as gas capable to convert the attached precursor molecules to active precursor sites. The substrate comprises a material, which influences an electrical field in its vicinity, and a material, which is sensitive for exposure to oxygen or moisture. The precursor material is applied to the surface of substrate in a first treatment space. The precursor material is applied in the gas mixture with inert gas in a pulsed manner, and the reactive agent is introduced in the gas mixture with inert gas or inert gas mixture in a pulsed manner. The excess material and reaction products are removed from the surface of the substrate using inert gas or inert gas mixture after each pulsed provision of precursor material and pulsed introduction of the reactive agent and during the application of the pulsed atmospheric pressure glow discharge plasma. The substrate is in a fixed position. In the first treatment space, a continuous or pulsed flow of a mixture of precursor material and inert gas or inert gas mixture is provided, and in the second treatment space, a continuous or pulsed flow of a mixture of reactive agent and inert gas or inert gas mixture is provided. The gas mixture of the reactive agent and inert gas comprises reactive agent (1-50%). The pulsed atmospheric glow discharge plasma is stabilized by a unit counteracting local instabilities in the plasma. The surface in the second treatment space is exposed to a sub atmospheric pressure glow discharge plasma. INDEPENDENT CLAIMS are included for an apparatus for atomic layer deposition on a surface of a substrate in a treatment space.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of various steps in an atomic layer deposition process.    Fixed substrate. (6)