NOVELTY - The method for forming a dense film for growth of a semiconductor absorber of a photovoltaic device, comprises forming a precursor layer on a substrate, reacting the precursor layer to form an absorber layer, formulating an ink of particles in which 90% of the particles are nanoflakes containing an element of group IB, IIIA and/or VIA and having a platelet shape, coating a substrate with the ink and an emulsion to form a precursor layer, processing the precursor layer in a suitable atmosphere to form a dense film, and maintaining or enhancing a dispersion of liquid gallium in solution.    USE - The method is useful for forming a dense film for growth of a semiconductor absorber of a photovoltaic device and for forming a solar cell (all claimed).    ADVANTAGE - The method provides more efficient, rapid and simplified creation of a dispersion and formation of a dense film at lower temperature thus capable of easily and economically manufacturing photovoltaic device and a solar cell with high performance, and avoids rapid and/or preferential settling of nanoflakes.    DETAILED DESCRIPTION - The method for forming a dense film for growth of a semiconductor absorber of a photovoltaic device, comprises forming a precursor layer on a substrate, reacting the precursor layer to form an absorber layer, formulating an ink of particles in which 90% of the particles are nanoflakes containing an element of group IB, IIIA and/or VIA and having a platelet shape, coating a substrate with the ink and an emulsion to form a precursor layer, processing the precursor layer in a suitable atmosphere to form a dense film, and maintaining or enhancing a dispersion of liquid gallium in solution by stirring, mechanical means, electromagnetic means, ultrasonic means and/or the addition of dispersants and/or emulsifiers and then adding a mixture of elemental particles such as aluminum, tellurium or sulfur. The ink has a desired stoichiometric ratio of the elements. Set of the particles: in the ink is inter-metallic flake particles containing 50 mol.% of IB-IIIA group inter-metallic alloy phase; and in the dispersion is in the form of nanoglobules containing group IIIA element in elemental form. Gallium is incorporated as a group IIIA element in the form of a suspension of nanoglobules, and quenched below room temperature. The nanoglobules are formed by creating an emulsion of liquid gallium in a solution. One or more classes of the particles are doped with inorganic materials. INDEPENDENT CLAIMS are included for:    (1) a composition;    (2) a material;    (3) a method of using the inter-metallic material; and    (4) a solar cell.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a photovoltaic device.    Base substrate (302)    Optional intermediate layer (303)    Base electrode (304)    Aluminum foil layer (305)    P-type absorber layer (306)    N-type semiconductor thin film. (308)