NOVELTY - A multi-colored optical device comprises gallium containing substrate structure having surface region; region of insulating material having growth regions or exposed regions provided on surface region; array configuration formed by growth regions including first/second gallium and indium containing semi-polar crystalline material provided on first/second growth region of gallium containing substrate structure, where first/second gallium and indium containing semi-polar crystalline material have thickness of 1-20 nanometers.    USE - As multi-colored optical device which can be applied to optical devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits and transistors.    ADVANTAGE - The device achieves high brightness and high resolution lighting technologies that high resolution red-green-blue displays, communications in polymer-based fibers, or solid-state lighting. The device provides improved crystal quality, highly efficient laser diodes and LEDs on nonpolar/semipolar. Gallium nitride (GaN) will enable laser and LED emission in the blue, green, yellow and red bands, allowing the realization of true color displays based on red-green-blue or blue-yellow laser diodes. The absence of polarization fields in the quantum wells on the substrates along with the increased growth temperatures enabled by selective area epitaxy (SAE) facilitates high efficiency device operation.    DETAILED DESCRIPTION - A multi-colored optical device capable of emitting electromagnetic radiation in greater than or equal to 365 nanometer range comprises gallium containing substrate structure having surface region; region of insulating material having at least two growth regions or exposed regions provided on surface region; an array configuration formed by growth regions including first growth region and second growth region, where the array configuration is defined by N and M (integers greater than 1); a first gallium and indium containing semi-polar crystalline material provided on the first growth region of the gallium containing substrate structure, the crystalline material having thickness of 1-20 nanometers and where first and second indium concentration is associated with first and second wavelength. An INDEPENDENT CLAIM is included for processing at least one precursor species to form gallium containing film involving providing non-polar or semi-polar gallium and nitrogen containing substrate having surface region; forming dielectric masking layer overlying the surface region to expose growth regions, substantially exposed gallium and nitrogen containing crystalline material regions, each of the growth regions having spatial dimension of greater than or equal to 10 microns; loading the non-polar or semi-polar gallium and nitrogen containing substrate onto susceptor in a reaction chamber at 600-1200 degrees C; introducing indium precursor species, nitrogen bearing species, gallium precursor species, and combining the species; initiating growth of a crystalline material within the exposed regions while maintaining the dielectric masking layer free from growth of the crystalline material; and maintaining a reaction temperature of 500-1200 degrees C for the crystalline material capable of emitting electromagnetic radiation and the crystalline material having higher indium concentration compared to indium concentration provided on a growth region of greater than 15 microns such that the indium species diffuses at a faster rate than the gallium species to cause the higher indium concentration at the growth region; and forming an indium and gallium and nitrogen containing crystalline material.