TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The functional material is a metal or comprises a metal-containing compound. The metal-containing compound comprises a group V or group VI anion (preferably oxide, nitride, sulfide or phosphide). The metal-containing compound contains zinc, aluminum, titanium, hafnium, zirconium and/or indium. The metal is copper, tungsten, aluminum, nickel, ruthenium or rhodium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The photopatternable deposition inhibitor material further comprises an initiator system, for ethylenic addition polymerization, containing as photoinitiator, a dye capable of absorbing imaging actinic radiation to achieve an excited state. The photopatternable deposition inhibitor material further comprises in addition to organosiloxane, a photopatternable material containing at least one addition-polymerizable ethylenically-unsaturated compound selected from monomers, oligomers and/or crosslinkable polymers and having a boiling point above 100 degrees C at normal pressure. The photopatternable material is a multifunctional acrylate. The photopatternable deposition inhibitor material further comprises a photopatternable material that comprises a cyclized poly(cis-isoprene) and sensitized to UV radiation with a bis-azide optionally sensitized to visible wavelengths with a dye sensitizer. The organosiloxane is photopatternable and comprises at least one addition-polymerizable ethylenically-unsaturated compound selected from monomers, oligomers and crosslinkable polymers and having a boiling point above 100 degrees C at normal pressure.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The process further involves removing the deposition inhibitor material after depositing the functional material. The photopatternable deposition inhibitor material is exposed to actinic radiation through a photomask or using a laser, in the absence of a photomask. The functional material is deposited by a vapor phase deposition process is a chemical vapor deposition or atomic layer deposition (ALD) process. The atomic layer deposition process involves spatially dependent ALD. Preferred Components: The organosiloxane is a polymer that comprises a vinyl terminated siloxane that is crosslinked. The organosiloxane is a fluorinated or partially fluorinated organosiloxane. EXAMPLE - A control method for preparation of a patterned Al2O3 dielectric layer by photopatterned organosiloxane deposition inhibitor using atmospheric pressure atomic layer deposition (ALD) process was carried out as follows: A thin film coating of a patterned Al2O3 layer was prepared comprised of a Si wafer substrate, a patterned layer of a selective area deposition (SAD) polymer, a 1100 Angstrom thick Al2O3 dielectric layer that was deposited in the areas that the SAD polymer did not cover. Solutions of Part A (containing DEHESIVE 944 (RTM: vinyl-terminated dimethylsiloxane polymer) (90), Crosslinker V24 (RTM: methylhydrogenpolysiloxane) (0.1), toluene (2000) and heptane (2910)) and Part B (containing Dehesive 944 (90), Catalyst OL (RTM: organoplatinum complex in polydimethylsiloxane) (3), toluene (2000) and heptane (2910)) were prepared. Equal amount of Parts A and B were then mixed and diluted by a factor of 10 using a mixture of toluene and heptane (33/48 ratio) to form the stock solution of Dehesive 944. The patterned layer of a deposition inhibition polymer was prepared by spin coating a mixture of 5 parts of 0.4% of 950 polymethyl methacrylate solution in anisole/toluene and 1 part of the DEHESIVE 944 polysiloxane in toluene/heptane at 3000 rpm; after heating at 120-180 degrees C for 1-2 minutes, the coated sample was exposed under deep UV for 5-15 minutes through a gridline-patterned photomask in presence of nitrogen. The exposed sample was then developed by toluene for 45 to 90 seconds, followed by 3 rinses. Exposed area was removed during the development step. The substrate with a patterned layer of deposition inhibition polymer was then subjected to Al2O3 deposition and patterned Al2O3 coating was prepared. The finished patterned coating appeared as a sharp gridline pattern of Al2O3 lines. Although the deposition was highly selective, the sensitivity of this photopatternable deposition inhibitor formulation was approximately 3400 mJ/cm2 at 250 nm, too low in effective sensitivity for practical manufacture of patterned coatings. A photopatternable deposition inhibitor coating (test) sensitive to blue light was prepared in the following manner: A 0.1% solution of Photoinitiator A (Z)-3-heptyl-2-((3-heptylnaphtho(2,3-d)thiazol-2(3H)-ylidene)methyl)naphtho(2,3-d)thiazol-3-ium butyltriphenyl borate in anisole was prepared. A Dehesive solution was prepared that contained 1.08% DEHESIVE 944, 0.002% Crosslinker V24, and 0.06% Catalyst OL in a mixture of 33 parts toluene and 48 parts heptane, and 0.85 g of toluene. A stock solution was prepared that contained 3.3 g of a 1% solution of polymethylmethacrylate dissolved in toluene, 0.5 g of a 10% solution of TMPTA in toluene, 0.24 g of the photoinitiator solution, and 0.85 g of toluene. To this solution, 0.5 g of the dehesive solution was added. One gram of this stock solution was diluted with 5 g of toluene. The solution was spin coated at 2000 RPM, baked at 80 degrees C for one minute, exposed using blue light, and developed using MIBK, forming a negative resist image. The sensitivity of this photopatternable coating was approximately 5 mJ/cm2, was nearly 3 orders of magnitude more sensitive than the photopatternable material described in control example. After the photosensitive coating was developed, an aluminum oxide coating was selectively deposited on regions not masked by the photopatterned deposition inhibitor. The patterned Al2O3 coating was prepared. Ellipsometry data indicated the photopatterned deposition inhibitor coating had an inhibition power of 500 Angstrom .