TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The insulation resin composition further contains inorganic filler excluding metal hydroxide which is surface treated with zinc molybdate. Preferred Process: The laminated sheet is formed by positioning the molded copper foil to the surface of the outer side of the prepregs which are laminated, and heat-pressing the obtained product. The copper foil is ultra-thin copper foil with carrier foil. Preferred Components: The metal hydroxide is aluminum hydroxide. The inorganic filler is talc. The metal-ion property impurity is chosen from sodium ion, potassium ion and calcium ion. The fiber base material is glass fiber or organic fiber. The printed wiring board and multilayer printed wiring board contain prepreg and/or laminated sheet. The semiconductor device contains semiconductor element and multilayer printed wiring board. Preferred Properties: The average particle diameter of the metal hydroxide is 0.1-10 mu m. The weight percentage reduction of metal hydroxide at 300 degrees C is 20-40 weight%.    TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The weight percentage reduction of insulation resin composition at 300 degrees C is 15% or less. Preferred Component: The curing agent is novolak-type phenol resin chosen from phenol novolak resin, cresol novolak resin and aryl alkylene type novolak resin. The ultraviolet absorber is compound having coumarin structure. EXAMPLE - Epiclon N-690 (RTM: cresol novolak-type epoxy resin) having epoxy equivalent of 210 (in weight parts) (34), Epiclon 850 (RTM: bisphenol-A epoxy resin) having epoxy equivalent of 190 (10), Epiclon 7050 (RTM: bisphenol-A epoxy resin) having epoxy equivalent of 1900 (4), EOCN-1020-75 (RTM: phenol novolak-type epoxy resin) (1) and epoxy silane type coupling agent (1) were dissolved in methyl ethyl ketone at normal temperature. Aluminum hydroxide having average particle diameter of 2.7 mu m, metal-ion property impurity (sodium ion) of 10 ppm and weight percentage reduction at 300 degrees C of 25% (10), spherical fused silica having average particle diameter of 0.5 mu m (35), talc processed with zinc molybdate (5) and 7-diethylamino-4-methyl coumarin (0.1) were mixed with solution and stirred for 10 minutes, to obtain resin composition. The obtained resin was impregnated into glass cloth having thickness of 94 mu m and dried for 2 minutes at 150 degrees C, to obtain prepreg. The obtained prepreg was molded with carrier for having thickness of 18 mu m and ultrathin copper foil having thickness of 3 mu m at 200 degrees C in pressure of 4 MPa for 2 hours and removing the carrier foil, to obtain laminated sheet having copper foil. Predetermined circuit wiring was formed in the laminated sheet and soldering resist was formed. The electrode portion which mounts the semiconductor element was formed. The obtained structure was subjected to nickel gold plating process. Then, the semiconductor element having solder pump was mounted in the substrate, to obtain semiconductor device. The laminated sheet had linear expansion coefficient of 27 ppm/ degrees C, arithmetic surface roughness of 0.7 mu m, glass transition temperature of 105 degrees C, weight% reduction of 2%, water absorption of 0.08 based on JISC 648, excellent insulation reliability, flame retardance, moisture absorption solder heat resistance, exposure property and press molding property. The semiconductor device had curvature of the substrate of 105 mu m, and excellent thermal shock property.