NOVELTY - The method comprises forming crystalline semiconductor seeds, depositing seeds on the substrate to obtain a distributed array of seeds on the substrate, epitaxially growing semiconductor on the seeds that merge together to form a continuous semiconductor film on the substrate. The seeds: are nanowires grown from metal-nanocluster catalyzed approach; have a portion with the smallest width of less than 100 nm; are formed by chemical synthesis or lithographic etch; and comprise nanoparticles, microparticles or polyhedron particles, and free-standing elongated structures.    USE - The method is useful for growing polycrystalline semiconductor film on a substrate such as a glass or silicon nitride, where the crystalline semiconductor film is useful to fabricate a semiconductor device such as a transistor, a LED, a photovoltaic device (all claimed), a switch, a diode, a tunnel diode, a Schottky diode, a bipolar junction transistor, a FET, an inverter, a complimentary inverter, an optical sensor, a sensor for an analyte (e.g. DNA), a memory device, a dynamic memory device, a static memory device, a laser, a logic gate, an AND gate, a NAND gate, an EXCLUSIVE-AND gate, an OR gate, a NOR gate, an EXCLUSIVE-OR gate, a latch, a register, a clock circuitry, a logic array, a slate machine, a programmable circuit, an amplifier, a transformer, a signal processor, a digital circuit, an analog circuit, a light emission source, a photoluminescent device, an electroluminescent device, a rectifier, a photodiode, a p-n solar cell, a phototransistor, a single-electron transistor, a single-photon emitter, a single-photon detector, a spintronic device, a scanning tunneling microscope, a field-emission device, a photoluminescence tag, a photonic band gap materials, and a circuit having digital and analog components.    ADVANTAGE - The method is capable effectively, economically and controllably growing the crystalline semiconductor film with good crystallinity and less defects on the substrate thus providing high speed electronic devices.    DETAILED DESCRIPTION - The method comprises forming crystalline semiconductor seeds, depositing seeds on the substrate to obtain a distributed array of seeds on the substrate, epitaxially growing semiconductor on the seeds that merge together to form a continuous semiconductor film on the substrate. The seeds: are nanowires grown from metal-nanocluster catalyzed approach; have a portion with the smallest width of less than 100 nm; are formed by chemical synthesis or lithographic etch; and comprise nanoparticles, microparticles or polyhedron particles, and free-standing elongated structures including nanowires, microfibers, ribbons and belts. The distributed array of seeds is obtained by depositing the preformed free-standing nanostructures or micro-structures and by localized growth on selected locations on substrate, and is nanowire array aligned along one direction. The crystalline semiconductor film has anistropic crystallinity with direction having nearly single crystalline order and the other having more grain boundaries. An INDEPENDENT CLAIM is included for a semiconductor device fabricated from a crystalline semiconductor film.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a growth of crystalline semiconductor film from distributed nano/microparticle seeds.