NOVELTY - A primary conductive-type doping layer is formed (ST120) on one side of a primary conductive-type crystalline silicon substrate. A secondary conductive-type doping layer is formed (ST130) on the other side of the substrate, and an uneven pattern film is formed (ST150) on the upper surface of secondary conductive-type doping layer. Then, a primary electrode is formed (ST160) on the outer of primary conductive-type doping layer and a secondary electrode is formed (ST170) on outer of uneven pattern film, to obtain crystalline silicon solar cell.    USE - Manufacture of crystalline silicon solar cell used for solar battery system (both claimed).    ADVANTAGE - The crystalline silicon solar cell is manufactured efficiently, economically and easily in short period of time. The short circuit of primary electrode and doping layer in solar cell is prevented.    DETAILED DESCRIPTION - A primary conductive-type doping layer is formed on one side of a primary conductive-type crystalline silicon substrate. The primary conductive-type doping layer has doping concentration higher than the substrate. A secondary conductive-type doping layer is formed on the other side of the substrate, and an uneven pattern film is formed on the upper surface of secondary conductive-type doping layer. Then, a primary electrode is formed on the outer of primary conductive-type doping layer and a secondary electrode is formed on outer of uneven pattern film, to obtain crystalline silicon solar cell. The uneven pattern film is an electroconductive film, and has zinc oxide layer containing diethyl zinc compound.    DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating the manufacturing process of crystalline silicon solar cell. (Drawing includes non-English language text)    Forming primary conductive-type crystalline silicon substrate (ST110)    Forming primary conductive-type doping layer (ST120)    Forming secondary conductive-type doping layer (ST130)    Heating (ST140)    Forming uneven pattern film (ST150)    Forming primary electrode (ST160)    Forming secondary electrode (ST170)