NOVELTY - Thick film conductive composition (I) comprises: (a) electrically conductive powder; (b) two or more additives, where the first additive is (i) bismuth containing additive and phosphorus containing additive; (ii) a metal oxide of one or more of bismuth and phosphorus; (iii) any compound that can generate the metal oxides of (ii) upon firing; and (iv) their mixture; and the second additive is (v) a metal oxide additive; (vi) a compound that can generate a metal oxide upon firing; and (c) one or more glass frits dispersed in (d) organic medium.    USE - (I) is useful for manufacturing a semiconductor device, which is useful in a solar cell (all claimed) of a solar panel. (I) is useful in photovoltaic devices.    ADVANTAGE - (I) improves electrical performance and adhesion properties of the semiconductor device. (I) improves electrical contact between the conductor of the thick film composition and the semiconductor substrate. The electrical efficiency did not decrease with the addition of the additives of either bismuth trioxide or copper.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a method of manufacturing a semiconductor device comprising: (a) providing one or more semiconductor substrates, one or more insulating films, and (I); (b) applying the insulating film to the semiconductor substrate, (c) applying the (I) to the insulating film on the semiconductor substrate, and (d) firing the semiconductor, insulating film and (I), where upon firing, the organic vehicle is removed, the silver and glass frits are sintered, and the insulating film is penetrated by components of (I); and    (2) a semiconductor device comprising an electrode, where the electrode, prior to firing, comprises (I).    DESCRIPTION OF DRAWING(S) - The figure shows a process flow diagram illustrating the fabrication of a semiconductor device.    Silicon substrate (10)    Aluminum paste (60)    Aluminum back electrode (61)    Backside silver paste (70)    Silver back electrode. (71)