TECHNOLOGY FOCUS - ELECTRONICS - Preferred Capacitor: The capacitor in the form of electrochemical capacitor comprises electrolytic cell, a nickel plate as counter electrode, mercury/mercury oxide/0.5M potassium hydroxide as the reference electrode, working electrode deposited with composition (I) and 0.5 M potassium hydroxide as the aqueous electrolyte. Preferred Components: The working electrode can be used in three-electrode configuration or a two-electrode configuration. The pulse power figure of merit of the electrode material is greater than 100 joules/second/gm of electrode material. The coated electrode is used in conjunction with a capacitor (preferably electrochemical capacitor).    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compounds: The formula (I) indicates a material in which both the oxide, Mn1-xO, and the element C, are present. Preferred Components: The manganese oxide particles are either amorphous or crystalline and the carbon particles are amorphous. The molar ratio of elemental carbon to Mn1-xO is 99:1 to 1:99. The coating method is selected from chemical vapor deposition, atomic layer deposition, spin coating and/or dip coating. The composition is coated over substrates which are electrically conducting, selected from nickel, platinum, gold, stainless steel and a thin sheet of stainless steel, which may be folded into a compact shape or a thin film of platinum or gold and any other metal or metal alloy or any metal or metal alloy coated onto a silicon or other semiconductor. The manganese precursor compound is selected from organometallic compounds of manganese such as manganocene, beta -diketones of manganese such as diaquobisacetylacetonatomanganese (II) and trisacetylacetonatomanganese (III) or their derivative compounds which contain direct manganese oxygen bonds with hydrocarbon or other organic moieties. The substrate is a thin sheet of stainless steel or other metal/alloy, which may be folded into a compact shape. The surface area of the coating on a substrate is 50-3000 (preferably greater than 2000) m2/g. The precursor manganese compound volatilized is either an organometallic compound or a co-ordination complex with hydrocarbon or other organic moieties. The coating thickness is 30-11000 (preferably 6000) nm. The coating is a carbonaceous metal oxide coating in which elemental carbon acts as a matrix onto which manganese oxide is deposited simultaneously. The nanocomposite coated electrode operates at current densities of 1-200 (preferably 50-100) mA cm-2. The nanocomposite coated electrode is charged and discharged for 100-100000 cycles (preferably about 100000 cycles). The electrode comprising the nanocomposite coating on a substrate is used to make the complete supercapacitor cell having electrolytes selected from but not limited to aqueous potassium hydroxide, aqueous disodium sulfate, and nonaqueous electrolytes (preferably polyacrylonitrile). Preferred Method: In method (M1), the precursor vapors are transported into a reaction chamber using a chemically inert gas selected from but not limited to argon, nitrogen, neon, krypton and xenon. In the method (M1), in addition to the inert carrier gas, the flow of an oxidizing gas such as oxygen, ozone (O3) and/or nitrous oxide (N2O) is employed or a combination of gases such as hydrogen (H2) and carbon dioxide (CO2), which yields oxygen concentration is employed. In method (M1), the composition is coated over substrates which are electrically conducting, selected from but not limited to nickel, platinum, gold, stainless steel, and any other metal or metal alloy that can sustain the processing. In method (M1), the composition is coated over substrate which is a thin film of platinum or gold or any metal or metal alloy deposited on a wafer of silicon or other semiconductor or a wafer of an insulator such as ceramic alumina. The chemical vapor deposition conditions are selected on the basis of CVD phase stability diagrams constructed using thermodynamics-based modeling of the CVD process. The thermodynamic analysis of the CVD process is carried out separately for the CVD process performed in argon ambient, and for a CVD process performed in an oxidizing ambient such as that of oxygen, ozone (O3) or nitrous oxide (N2O) atmosphere in the CVD reactor. The vapors of the precursor manganese compound are transported using an oxidizing gas selected from oxygen, ozone and nitrous oxide, in lieu of an inert carrier gas. The chemical vapor deposition conditions includes a deposition temperature of 300-900 (preferably 650) degrees C; total pressure in the CVD reactor of 2-500 (preferably 5) Torr; the precursor vaporizer temperature of 30-280 (preferably 230) degrees C; temperature of the line tubing transporting the precursor of 30-300 (preferably 250) degrees C; precursor carrier gas (argon or other inert gas) flow rate of 10-100 (preferably 50) sccm; the flow rate of the oxidizing gas if used of 0-300 (preferably 50) sccm; and the duration of the CVD process of 2 minutes to 200 (preferably 90) minutes. EXAMPLE - No suitable example given.