NOVELTY - Atomic layer deposition process for forming a patterned thin film comprises: (a) providing a substrate (20); (b) applying a composition comprising a deposition inhibitor material comprising an organosiloxane polymer, which may optionally be crosslinked to the substrate; (c) patterning the deposition inhibitor material, either after step (b) or simultaneously with applying the deposition inhibitor material to provide areas effectively not having the deposition inhibitor material; and (d) depositing an inorganic thin film on the substrate by atomic layer deposition.    USE - The process is useful for forming patterned thin film, which is useful: in electronic device including an integrated circuit, active-matrix display, solar cell, active-matrix imager, sensor, and radio frequency (rf) price, identification, or inventory label (all claimed); semiconductor devices and supporting electronic components such as resistors and capacitors, insulators, bus lines, and other conductive structures. The process is useful for forming: thin layers of metal oxides in the components of electronic devices; thin film transistors, which are useful as switching elements in electronics, e.g. in active-matrix liquid-crystal displays and smart cards.    ADVANTAGE - The atomic layer deposition (ALD) process provides thin film with improved thickness resolution and conformal capabilities, compared to its chemical vapor deposition (CVD) predecessor. The atomic layer deposition process is self-terminating process and can deposit precisely one atomic layer when conducted up to or beyond self-termination exposure times. The ALD process: can be executing the sequencing efficiently and reliably for many cycles in order to allow cost-effective coating of many substrates; minimizes the time that an ALD reaction needs to reach self termination, at any given reaction temperature; maximize the flux of chemicals flowing into the ALD reactor, using pulsing process; and allows the operation under atmospheric pressure condition.    DETAILED DESCRIPTION - Atomic layer deposition process for forming a patterned thin film comprises: (a) providing a substrate (20); (b) applying a composition comprising a deposition inhibitor material comprising an organosiloxane polymer, which may optionally be crosslinked, to the substrate; (c) patterning the deposition inhibitor material, either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas effectively not having the deposition inhibitor material; and (d) depositing an inorganic thin film on the substrate by atomic layer deposition, where the inorganic thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. An INDEPENDENT CLAIM is included for an electronic device made using the process, where the electronic device is an integrated circuit, active-matrix display, solar cell, active-matrix imager, sensor, and radio frequency (rf) price, identification or inventory label.    DESCRIPTION OF DRAWING(S) - The figure shows a delivery head for atomic layer deposition.    Delivery head (10)    Output channels (12)    Inlet conduit (16)    Substrate (20)    Exhaust conduit. (24)