TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The charge transport compound comprises compound of formula: (Rc-X-)nRd or a compound of formula (CM-1).Rc=dibenzothiopyran having substructure of formula (SS-5);X=single bond, alkylene group, arylene group, arylene alkylene group, heteroalkylene group, heteroarylene group, heteroarylene alkylene group, -C(=O)O-, -OC(=O)-, -S- or ether group;Rd=multivalent alkyl group, multivalent aryl group, multivalent heteroalkyl group, multivalent heteroaryl group or multivalent heteroarylalkyl group;n=2-6;Y=S;m=1;andRg, Ri-Rm=alkyl, aryl, aralkyl, heteroalkyl or heteroarylene group.Preferred Substructures: The charge transport compound is free of substructures chosen from carbazole substructures, tertiary aromatic amine substructures, triazine substructures or metal coordination compound substructures. SPECIFIC COMPOUNDS - The charge transfer compound is chosen from 12 compounds such as compounds of formulae (CM-8, CM-17).    EXAMPLE - A reactor equipped with a condenser was charged with 2,8-dibromodibenzothiophene (in weight parts) (1692), p-tolylboronic acid (1489), tetrakis(triphenylphosphine)palladium (583), 1 ,4-dioxane (25850) and aqueous solution of potassium carbonate (2066) in water (6000) under nitrogen atmosphere. The resulting mixture was heated to reflux for eight days. The reaction mixture was cooled at 25 degrees C, diluted with dichloromethane (266000) and washed with water (300000). The organic layer was dried over anhydrous magnesium sulfate and concentrated to dryness. The residue was added to a dichloromethane-methanol mixture to precipitate the product (1194) of formula (CM-15). (4-methylphenyl)methane (MPMP) layer of thickness 30.2 nm, a layer containing electroluminescent compound of formula (E-1) of thickness 40.3 nm, a layer containing compound of formula (CM-15) of thickness 10.4 nm, tris(8-hydroxyquinolato)aluminum layer of thickness 30.4 nm, lithium fluoride layer of thickness 1 nm and aluminum layer of thickness 50.5 nm were deposited on oxygen plasma cleaned indium tin oxide (ITO) substrate, to form a device. The device had a peak radiance of 8000 cd/m2 at 17V and a peak efficiency of 18 cd/A at 15 V.