NOVELTY - Producing (M1) thin-film device (1) involves (A) preparing a resin substrate (10); (B) forming thermal-buffer layer (50) over substrate; (C) forming light-cutting layer (20) over it, where light-cutting layer prevents damage from short-wavelength light to substrate; (D) forming non-monocrystalline film (30a) over light-cutting layer, where non-monocrystalline film transmits short-wavelength light to such a degree that short-wavelength light can damage substrate; and (E) forming inorganic film by irradiating non-monocrystalline film with short-wavelength light so as to anneal the film.    USE - In solar cell, electro-optic device, thin film sensor or semiconductor device (claimed) e.g. thin-film transistor.    ADVANTAGE - The thin-film devices comprising inorganic film has satisfactory quality without damage from the short-wavelength light to the substrate even in the case where the non-monocrystalline film transmits the short-wavelength light to such a degree that the short-wavelength light can damage the substrate; and has superior element characteristics.    DETAILED DESCRIPTION - Producing (M1) thin-film device (1) involves    (A) preparing a substrate (10) containing a resin material as main component;    (B) forming a thermal-buffer layer (50) over the substrate;    (C) forming a light-cutting layer (20) over the thermal-buffer layer, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate;    (D) forming a non-monocrystalline film (30a) over the light-cutting layer, where the non-monocrystalline film transmits the short-wavelength light to such a degree that the short-wavelength light can damage the substrate; and    (E) forming an inorganic film by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.    An INDEPENDENT CLAIM is included for thin-film device which is produced by the process (M1) and comprises inorganic film formed in the pattern over the substrate, and the substrate contains the resin material as the main component.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of the structure of semiconductor device as a thin-film device.    Thin-film device (1)    Substrate (10)    Light-cutting layer (20)    Non-monocrystalline film (30a)    Thermal-buffer layer (50)