NOVELTY - A silicon-containing mounting substrate is obtained by mounting a semiconductor chip which consists of silicon. The silicon-containing mounting substrate comprises a surface electrode (22) provided in surface of the substrate corresponding to a pad electrode provided in the semiconductor chip, and a back surface electrode (23) comprising layer(s) electrically connected with the surface electrode and which is provided in back surface of the substrate. The silicon purity of the silicon-containing mounting substrate is 99% or less.    USE - Silicon-containing mounting substrate is used for semiconductor module (claimed) for integrated circuit and large scale integration, solar cell, sensor, surface acoustic wave filter, and crystal resonator.    ADVANTAGE - The silicon-containing mounting substrate has high reliability, and is economical and efficient.    DETAILED DESCRIPTION - A silicon-containing mounting substrate is obtained by mounting a semiconductor chip which consists of silicon. The silicon-containing mounting substrate comprises a surface electrode provided in surface of the substrate corresponding to a pad electrode provided in the semiconductor chip, and a back surface electrode comprising layer(s) electrically connected with the surface electrode and which is provided in back surface of the substrate. The silicon purity of the silicon-containing mounting substrate is 99% or less. The silicon-containing mounting substrate contains phosphorus or nitrogen-type impurity. The silicon-containing mounting substrate further contains boron, phosphorus, arsenic, aluminum, copper and/or iron, and metal oxide as sintering promoter. The metal oxide is complex oxide of manganese oxide and titanium oxide.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the mounting substrate. (Drawing includes non-English language text)    Penetration electrode (21)    Surface electrode (22)    Back surface electrode (23)    Through-hole (24)    Insulating film (25)