NOVELTY - The method comprises disposing a tip of a scanning probe microscope such as an atomic force microscope/a scanning tunneling microscope in proximity to a surface of a substrate (102), establishing an electrical potential difference between the tip and the surface, which causes localized electrical effects to occur in proximity to the tip, and depositing reactants to the substrate such that self-limited reactions provide atomic layer (106) by atomic layer growth. The deposition of the reactants on the substrate occurs in a deposition pattern defined by the localized electrical effects.    USE - The method is useful for performing area-selective atomic layer deposition of metals, semiconductors and insulators including platinum, lead sulfide and zirconium oxide for growth of ultra-thin films, where the materials are useful in energy conversion devices such as fuel cells, solar cells and batteries.    ADVANTAGE - The method is capable of easily and effectively performing the area-selective atomic layer deposition and growth of an ultra-thin film in short time with high accuracy and controlled uniformity, thickness and device structure.    DETAILED DESCRIPTION - The method comprises disposing a tip of a scanning probe microscope such as an atomic force microscope/a scanning tunneling microscope in proximity to a surface of a substrate (102), establishing an electrical potential difference between the tip and the surface, which causes localized electrical effects to occur in proximity to the tip, and depositing reactants to the substrate such that self-limited reactions provide atomic layer (106) by atomic layer growth. The deposition of the reactants on the substrate occurs in a deposition pattern defined by the localized electrical effects. The localized electrical effects have sufficient strength to define the deposition pattern, are sufficiently weak that the reactions remain self-limited, and comprise a direct current electric field. The chemical reaction rates of the self-limited reactions are enhanced by the direct current electric field. A tunneling current flows between the tip and the substrate. The method further comprises moving the tip relative to the substrate during deposition, holding the tip fixed relative to the substrate during deposition, and controlling each of the additional scanning probe microscope tips, where the deposition occurs.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a process for atomic layer deposition.    Substrate (102)    Gas-phase precursor molecules (104)    Layer (106)    Oxidant (108)    Forming material. (110)