TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The N,N'-1,4,5,8-naphthalenetetracarboxylic diimide has a structure of formula (I). The thin film transistor is a field effect transistor comprising a dielectric layer, the gate electrode, the source electrode and the drain electrode, where the dielectric layer, the gate electrode, the thin film of organic semiconductor material, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material. The thin film of organic semiconductor material is capable of exhibiting electron mobility greater than 0.001 cm2/Vs. The thin film transistor has an on/off ratio of a source/drain current of at least 104. The gate electrode is adapted for controlling, by a voltage applied to the gate electrode, a current between the source and drain electrodes through the thin film of organic semiconductor material. The dielectric layer comprises an inorganic or organic electrically insulating material. The source, drain, and gate electrodes each comprise a material comprising doped silicon, metal, or a conducting polymer. The thin film transistor further comprises a non-participating support that is optionally flexible. The multiplicity of the thin film transistors is on a non-participating support that is optionally flexible. The thin film is deposited on the substrate by sublimation, where the substrate has a temperature of no more than 100 degrees C during deposition. The thin film comprises 2-cyclohexyl-7-((1S,4S)-4-(trifluoromethyl)cyclohexyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraone, 2,7-bis((1S,4S)-4-(trifluoromethyl)cyclohexyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraone, 2-((1R,4R)-4-(trifluoromethyl)cyclohexyl)-7-((1S,4S)-4-(trifluoromethyl)cyclohexyl)benzo-(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraone, 2-((1S,4S)-4-methylcyclohexyl)-7-((1S,4S)-4-(trifluoromethyl)cyclohexyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraone, (S/R) 2,7-bis-(4-trifluoromethyl-cyclohexyl)-benzo(lmn)(3,8)phenanthroline-1,3,6,8-tetraone, 2-cyclopentyl-7-(4-trifluoromethyl- cyclohexyl)-benzo(lmn)(3,8)phenanthroline-1,3,6,8-tetraone, 2,7-bis-(4-nonafluorobutyl-cyclohexyl)-benzo(lmn)(3,8)phenanthroline-1,3,6,8-tetraone, (1S,1'S,4S,4'S)-bis(2,2,2-trifluoroethyl) 4,4'-(1,3,6,8-tetraoxobenzo(lmn)(3,8)phenanthroline-2,7-(1H,3H,6H,8H)-diyl)dicyclohexanecarboxylate, and/or ((S)-1,2,3,4-tetrahydronaphthalen-2-yl)-7-((1S,4S)-4-(trifluoromethyl)cyclohexyl)benzo(lmn)(3,8)phenanthroline-1,3,6,8(2H,7H)-tetraone.Rc = fluorinated substituent in the C-4 cis configuration with respect to the imide group;Rt = fluorinated substituent in the C-4 trans configuration with respect to the imide group;A1 = organic substituent, preferably cyclohexyl or cyclopentyl (optionally substituted) (where the A1 is fluorinated substituent and is 1-5C saturated fluoroalkyl as Rc);Y1 = organic or inorganic groups that do not adversely affect the n-type semiconductor properties of the film from such compounds;m = 0-4.