TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The structuring layer shows recesses and/or consists of structuring individual layer arranged next to one another. Preferred Method: In step (b), the hot melt tint is applied through a pressure nozzle, preferably that the pressure nozzle is moved parallelly to the surface of the semi-conducting substrate to apply the hot melt tint. The application of the hot melt tint takes place in contact-less manner, preferably that the hot-melt-tint is applied through a pressure nozzle, which finds itself in an interval from at least 100 mu m from the surface of the semi-conducting substrates. In step (b), the hot melt tint is applied by an inkjet-printing method. In a lift-off-method, step (a) is carried out after step (b) and step (c) after step (a) and that the metal layer in step (a) is applied by evaporation coating with an evaporation coating rate of less than 10x 10-10 m/s, preferably less than 2x 10-10 m/s. The metal layer comprises many individual layers and is produced by evaporation coating made from titanium, palladium and silver, where titanium is applied with an evaporation coating rate of 4x 10-10 m/s, preferably 2x 10-10 m/s, palladium with an evaporation coating rate of 5x 10-10 m/s, preferably 2x 10-10 m/s and silver with an evaporation coating rate of 9x 10-10 m/s, preferably 3x 10-10 m/s. The metal layer comprises many individual layers and is produced by evaporation coating made from aluminum, titanium and silver, preferably that all 3 layers are respectively applied with an evaporation coating rate of less than 2x 10-10 m/s. The melting point of the used hot melt tint is 60-100 degrees C, preferably 70-80 degrees C. In step (a), the metal layer is applied in such a way that it completely covers the surface of the semi-conducting substrate and/or the structuring layer. The metal structure is a contacting structure for a semi-conducting solar cell, where the solar cells are formed from the semi-conducting substrate. On the surface of the semi-conducting substrate, at least two metal structures are formed, where one metal structure is the p-contacting structure and the other metal structure is the n-contacting structure and that both contacting structures are produced by the above method. The metal layer in the step (a) is applied all over and the structuring layer is provided in such a manner that both the n- contacting structure and the p-contacting structure are generated from the metal layer by contact separation. In step (a), before applying the metal layer, additionally a structured insulation layer (4) is applied on the surface of the semi-conducting substrate, which extends in the area in which the p- and n- contacting structures are joined to each other. The solar cell shows a emitter-wrap-through structure and the method additionally comprises: producing more openings in the semi-conducting substrate, where the openings of the semi-conducting substrate are penetrated perpendicularly to the surface of the semi-conducting substrate; removing a small layer from the surface of the semi-conducting substrate as well as the openings, for avoiding impurities and crystal damage; producing at least two oppositely doped dope regions in the semi-conducting substrate for producing a pn-conversion; applying a metal structure as contacting structure, so that the contacting structure is bounded with at least a doped area in an electrically conductive manner. The solar cells exhibit at least two comb-like intertwining metal structures on the surface of the semi-conducting substrates, where at least one, preferably both the metal structures are produced by the above method, preferably that the solar cell is a one-sided contactable solar cell. After applying the metal structure, the metal structure is reinforced galvanically. The structuring layer in step (b) is produced by a UV-hardened hot melt tint. After step (b), the structuring layer is irradiated with UV-radiation for hardening the UV-hardened hot melt tint. In step (b), the temperature difference between semi-conducting substrate and hot melt tint is increased, in which the semi-conducting substrate is cooled and/or the hot melt tint is increased to a higher temperature. The melting point of the hot melt tint is increased.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The hot melt tint is a hydrocarbon wax. EXAMPLE - No suitable example given.