TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Device: The photoelectric conversion layer comprises an n-type organic semiconductor material in addition to the organic photoelectric conversion material. The photoelectric conversion layer has a blend film comprising both the organic photoelectric conversion material and the n-type organic semiconductor material. A film of the photoelectric conversion layer is formed by a solution-coating method, where a solvent in the solution-coating method contains at least one solvent having a boiling point of 135-300 degrees C. The organic thin-film photoelectric conversion device further has a buffer layer containing an electrically conductive polymer, the buffer layer being disposed between at least one of the electrode layers and the organic photoelectric conversion layer. The device is sealed under an inert atmosphere after production of the organic thin-film photoelectric conversion device.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The n-type organic semiconductor material is at least one compound selected from fullerene compound, phthalocyanine compound, naphthalene tetracarbonyl compound, and perylene tetracarbonyl compound (preferably fullerene compound). SPECIFIC COMPOUNDS - 38 Compounds are disclosed as (I) e.g. cyclopentanone derivatives of formula (IA)-(ID), and (IF).    EXAMPLE - A glass substrate with a patterning of ITO electrode was washed in isopropyl alcohol using ultrasonic, and then dried. Thereafter, a UV ozone treatment was performed for 30 minutes to remove organic contaminants on the surface of ITO substrate. Subsequently, an aqueous solution containing poly (3,4-ethylenedioxythiophene) (PEDOT)/polystyrene sulfonic acid (PSS) was spin coated on the ITO substrate at 4000 rpm for 60 seconds, and then dried at 120 degrees C for 10 minutes. Thus, a 50 nm film-thick buffer layer was formed. Subsequently, after dissolving cyclopentanone derivative (IA) (10 mg) and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM) (10 mg) in 1,2-dichlorobenzene (1 ml) in a glove box (nitrogen atmosphere), ultrasonic was irradiated to the above mixture for 5 minutes, and then the resultant solution was spin coated on the previously formed buffer layer. Thus, greater than or equal to 200 nm thick photoelectric conversion layer having an almost uniform thickness was formed. On the photoelectric conversion layer, aluminum was vacuum-deposited so that the thickness was 80 nm. Thus, a metal electrode was formed. Finally, by sealing with a glass sealing can and an UV curing resin in a glove box (nitrogen atmosphere), an organic thin-layer photoelectric conversion device having an effective area of 0.04 cm2 was obtained. To the thus-obtained device, was irradiated a light in which a light of a greater than or equal to 700 nm wavelength range was cut through a cut-off filter. Thereafter, current-voltage characteristics were measured. The results demonstrated excellent solar cell characteristics, namely short circuit-current (Jsc) of 0.52 mA/cm2 and open voltage (Voc) of 0.28 V.