TECHNOLOGY FOCUS - ELECTRONICS - The semiconductor junction comprises a homojunction, a heterojunction, a heteroface junction, a buried homojunction, a p-i-n junction, or a tandem junction. The semiconductor junction comprises an absorber layer and a junction partner layer, where the absorber layer is copper-indium-gallium-diselenide (CIGS) having (110) crystallographic orientation or having (112) crystallographic orientation. The semiconductor junction comprises amorphous silicon or a thin-film polycrystalline. The semiconductor junction comprises a group III-V material (preferably GaAs, InP, AlSb, or CdTe); or a group II-VI material. When the semiconductor junction is p-n junction, the absorber layer is n-CdSe, n-ZnSSe, n-CdS, n-ZnSe or n-ZnS and the junction partner is p-CdTe.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The back-electrode is made of aluminum, molybdenum, tungsten, vanadium, rhodium, niobium, chromium, tantalum, titanium, steel, nickel, platinum, silver and/or gold or their alloys; or is made of indium tin oxide, titanium nitride, tin oxide, fluorine doped tin oxide, doped zinc oxide, aluminum doped zinc oxide, gallium doped zinc oxide, boron doped zinc oxide, indium-zinc oxide, a metal-carbon black-filled oxide, a graphite-carbon black-filled oxide, a carbon black-filled oxide, a superconductive carbon black-filled oxide, an epoxy, a conductive glass, or a conductive plastic. The transparent conductive layer comprises carbon nanotubes, tin oxide, fluorine doped tin oxide, indium-tin oxide (ITO), doped zinc oxide, aluminum doped zinc oxide, gallium doped zinc oxide, boron doped zinc oxide, and/or indium-zinc oxide. The junction partner layer is In2Se3, In2S3, ZnS, ZnSe, CdInS, CdZnS, ZnIn2Se4, Zn1-x-MgxO, CdS, SnO2, ZnO, ZrO2 or doped ZnO (preferably CdS, ZnS, ZnSe or CdZnS). The absorber layer is a group I-III-VI2 ternary compound. The group I-III-VI2 ternary compound is CuInSe2, CdGeAs2, ZnSnAs2, CuInTe2, AgInTe2, CuInSe2, CuGaTe2, ZnGeAs2, CdSnP2, AgInSe2, AgGaTe2, CuInS2, CdSiAs2, ZnSnP2, CdGeP2, ZnSnAs2, CuGaSe2, AgGaSe2, AgInS2, ZnGeP2, ZnSiAs2, ZnSiP2, CdSiP2 or CuGaS2.    TECHNOLOGY FOCUS - POLYMERS - The hollowed transparent casing is made of plastic or glass. The hollowed transparent casing comprises a urethane polymer, an acrylic polymer, a fluoropolymer, a silicone, a silicone gel, an epoxy, a polyamide or a polyolefin. The hollowed transparent casing comprises polymethyl methacrylate (PMMA), poly-dimethyl siloxane (PDMS), ethylene vinyl acetate (EVA), perfluoroalkoxy fluorocarbon (PFA), nylon, crosslinked polyethylene (PEX), polypropylene (PP), polyethylene terephthalate glycol (PETG), polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC) or polyvinylidene fluoride (PVDF). The substrate comprises plastic or glass. The filler layer comprises ethylene vinyl acetate (EVA), silicone, silicone gel, epoxy, polydimethyl siloxane (PDMS), RTV silicone rubber, polyvinyl butyral (PVB), thermoplastic polyurethane (TPU), a polycarbonate, an acrylic, a fluoropolymer, or a urethane.