NOVELTY - Fabrication of a semiconductor structure comprises depositing a first layer (4) comprising a III-nitride material onto a smooth surface of a substrate (2), where first layer comprises an upper surface with a triangular texture as grown, the faces of the triangles are the M-planes of the III-nitride material, and the III-nitride material comprises A-planes parallel to a predetermined material orientation of smooth surface.    USE - Method of fabricating a semiconductor structure useful for fabricating a semiconductor device e.g. LED (claimed) or M-plane nonpolar III-nitride p-n junction LED, solar cell, and photodetector. Uses include but are not limited to electronic displays, solid state lights, computers, or solar panels.    ADVANTAGE - The texture layer enhances light extraction; and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. The semiconductor device has light extraction efficiency of greater than or equal to 99, preferably greater than or equal to 99.9%; internal quantum efficiency of greater than or equal to 70, preferably greater than or equal to 80%; and external quantum efficiency of greater than or equal to 60, preferably greater than or equal to 99.9%. Highly efficient LEDs are achieved. Improvement in internal quantum efficiency is achieved through the incorporation of multiple quantum wells, in the p-n junction. This results in better confinement of injected electrons and holes from the n- and p-sides respectively and thus more efficient radiative recombination. By growing the quantum wells on a nonpolar surface, the quantum wells are square and not distorted, and thus the electrons and holes in the wells recombine more efficiently than in quantum wells grown in the polar orientation.    DETAILED DESCRIPTION - Fabrication of a semiconductor structure comprises providing a substrate (2) comprising a smooth surface having a predetermined material orientation, where substrate comprises R-plane sapphire, A-plane silicon carbide, A-plane zinc oxide, A-plane gallium nitride, A-plane aluminum nitride, or A-plane aluminum gallium nitride; and depositing a first layer (4) comprising a III-nitride material onto the smooth surface of the substrate, where first layer comprises an upper surface with a triangular texture as grown, the faces of the triangles are the M-planes of the III-nitride material, and the III-nitride material comprises A-planes parallel to the predetermined material orientation. INDEPENDENT CLAIMS are included for:    (1) a method of fabricating a semiconductor device comprising providing a substrate; depositing a first layer comprising III-nitride material onto the smooth surface of the substrate; depositing quantum well(s) onto the first layer, where quantum wells comprise III-nitride material and textured by the upper surface of the first layer; and depositing an upper layer (8) onto the uppermost quantum well, where upper layer comprises III-nitride material and textured by the uppermost quantum well, and deposition of the first layer and the upper layer includes depositing the layers with opposite p and n dopants to comprise a p-n junction (3) between them;    (2) a semiconductor device;    (3) a semiconductor structure; and    (4) a template for the formation of semiconductor device comprising a nonpolar III-nitride material and formed as a layer having an upper surface (9) and a lower surface, where upper surface has a textured as grown topology and a nonpolar plane oriented parallel to the lower surface.    DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view of a semiconductor layer deposited onto a textured template to form a p-n junction.    Substrate (2)    P-n junction (3)    First layer (4)    Upper layer (8)    Upper surface (9)