NOVELTY - A semiconductor material (10) is selectively doped by respectively forming angled groove(s) (14) and diffusion barrier (12) in semiconductor material, where diffusion barrier includes a diffusion barrier material that is selected so that diffusing a dopant material through the diffusion barrier is reduced; doping the semiconductor material by exposing it with the groove to dopant material such that a region of semiconductor material that is covered by diffusion barrier has a predetermined first dopant concentration; and forming an electrical contact within angled groove.    USE - Selectively doping a semiconductor material for fabricating a solar cell.    ADVANTAGE - The step of doping the semiconductor material with the groove is conducted so that a selective emitter is formed in single doping step, thus simplifying fabrication of solar cell. The angled groove is sufficiently angled and the electrical contact is arranged so that a portion of electrical contact is hidden by a portion of semiconductor material, thus increasing an active area of solar cell which is arranged for receiving light and generating electron hole pairs. The diffusion barrier is formed using a suitable directional deposition process conducted so that a relatively large area of the groove is free of diffusion barrier material, which may provide a higher dopant concentration to relatively large area of groove; thus reducing electrical resistance between semiconductor material and electrical contact. The diffusion barrier material may be selected to provide desired anti-reflective and/or surface passivating properties so that there is no need for depositing an additional layer having such properties, thus further improving production efficiency.    DETAILED DESCRIPTION - Selectively doping a semiconductor material (10) comprises:    (A) forming angled groove(s) (14) in semiconductor material and forming a diffusion barrier (12) on semiconductor material, where diffusion barrier includes a diffusion barrier material that is selected so that diffusing a dopant material through the diffusion barrier is reduced;    (B) doping the semiconductor material by exposing it with the groove to dopant material such that a region of semiconductor material that is covered by diffusion barrier has a predetermined first dopant concentration; and    (C) forming an electrical contact within angled groove.    The method is conducted so that a portion of surface area of semiconductor material within the groove and below the electrical contact has a second dopant concentration that is higher than the first dopant concentration.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating processing steps of selectively doping a semiconductor material for fabricating a solar cell.    Semiconductor material (10)    Diffusion barrier (12)    Angled groove (14)    Internal surface region of angled groove (20)    Silicon nitride layer (22)