TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Agent: The polishing agent is an alumina, colloidal silica, a cerium oxide or diamond.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Surfactant: The surfactant is an anionic surfactant and/or a nonionic surfactant. Preferred Composition: The cleaning agent further contains a chelating agent (B), a reducing agent (C) and an alkaline component (D). The chelating agent is chosen from amino polycarboxylic acid, hydroxycarboxylic acid, phosphonic acid, condensed phosphoric acid and their salt. The reducing agent is chosen from oxo-acid of 1-12C aldehydes, 6-9C reductones, 1-30C fatty amine, thio-type reducing agent, sulfur-type reducing agent, and oxo-acid of phosphorus. Preferred Processes: A cleaning process of an electronic material is performed using the cleaning agent, after polishing process or texturing process. The cleaning process is carried out using ultrasonic cleaning system, shower cleaning system, spray cleaning system, brush washing system, immersion cleaning system, immersion rocking cleaning system, and single-wafer cleaning system. The polishing and/or texturing processes are performed using a polishing agent. Preferred Properties: The cleaning agent has pH of 1-13, preferably 5-13. The content of active ingredients contained in the cleaning agent is 0.01-15 mass%. The contact angle of water with respect to substrate after cleaning process is 20 degrees or less at 25 degrees C. EXAMPLE - Lauryl alcohol (in mass parts) (200) and 25% tetramethylammonium hydroxide aqueous solution (10) were spin-dehydrated at 100 degrees C for 30 minutes under reduced pressure, in a stainless steel autoclave. Then, ethylene oxide (430) was dripped for 3 hours, and the resulting reaction mixture was aged at 100 degrees C for 3 hours. The obtained crude product was maintained at 150 degrees C under reduced pressure for 2 hours, to obtain adduct of lauryl alcohol and ethylene oxide (630), as nonionic surfactant. Nonionic surfactant (0.4), ethylenediaminetetraacetic acid (0.2), tetramethylammonium hydroxide (0.2) and acrylic acid (0.05) were stir-mixed, to obtain cleaning agent. The obtained cleaning agent had excellent cleaning effect with respect to electronic material substrates.