NOVELTY - A semiconductor device comprises a chip (321) and an antenna (331) having a depressed portion. The chip comprises a semiconductor element layer comprising a thin-film transistor (TFT), a conductive resin, and a sealing layer. The sealing layer comprises fiber component impregnated with organic resin. The chip is embedded inside the depressed portion. The antenna is electrically connected to TFT through conductive resin. The sealing layer has thickness of 10-100 mu m. The thickness of chip is equal to or smaller than depth of depressed portion.    USE - Semiconductor device e.g. microprocessor which controls another device or performs calculation and processing of data, optical sensor, image sensor, solar battery, integrated-circuit tag, radio-frequency tag, wireless tag, electronic tag, integrated-circuit card, identification card, and radio-frequency identification tag (RFID) used in banknotes, family registers, residence certificates, passports, license, expert opinion in writings, gift certificates, etc., and in electronic devices, such as digital cameras, mobile telephones, digital players, electronic paper, and navigation systems. Can also be used as dynamic random access memory, static random access memory, ferroelectric random access memory, mask read only memory, electrically programmable read only memory, electrically erasable and programmable read only memory, or flash memory.    ADVANTAGE - The semiconductor device is a highly reliable semiconductor device which is not damaged by local pressing force from the outside and in which unevenness of a portion where an antenna and an element overlap with each other is reduced. Creases are prevented from occurring in the sealing layer, as the chip is embedded in antenna to obtain a planarized semiconductor device. The semiconductor device, when used as RFID tag attached to a product, eases merchandise management and lowers cost of product tracing management system.    DETAILED DESCRIPTION - A semiconductor device comprises a chip and an antenna having a depressed portion. The chip comprises a semiconductor element layer comprising a thin-film transistor (TFT), a conductive resin over the semiconductor element layer, and a sealing layer covering the semiconductor element layer and the conductive resin. The sealing layer comprises a fiber component impregnated with an organic resin. The chip is embedded inside the depressed portion. The antenna is electrically connected to the TFT through the conductive resin. The sealing layer has a thickness of 10-100 mu m. The thickness of chip is equal to or smaller than the depth of depressed portion. The antenna includes silver, gold, copper, nickel, platinum, palladium, tantalum, molybdenum, titanium and/or aluminum.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the manufacturing method of semiconductor device.    Conductive adhesive material (315)    Adhesive material (316)    Substrate (318)    Chip (321)    Antenna (331)