TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic thin film is a metal or comprises a metal-containing compound. The metal-containing compound comprises a group V or group VI anion, where the metal-containing compound: is an oxide, nitride, sulfide, or phosphide; and contains zinc, aluminum, titanium, hafnium, zirconium, and/or indium. The metal is copper, tungsten, aluminum, nickel, ruthenium or rhodium. The second reactive gaseous material is a non-metallic compound.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Process: The series of gas-flows are provided by a deposition device comprising, facing the substrate in plan view, a series of open elongated output openings, substantially in parallel, positioned over the substrate in close proximity in it, in an output face of a deposition device spaced within 1 mm from the surface of the substrate subject to atomic layer deposition. In the process, elongated exhaust openings between the series of open elongated output openings for the first reactive gaseous material and the second reactive gaseous material; relative movement of the substrate to a deposition device is at a speed at least 0.1 cm/second, and the series of gas flows is at a speed of at least 1 cm/second. The area of the substrate is exposed to a gas flow in an elongated output opening for less than 100 milliseconds. In the process, a surface area of the substrate exceeds a surface area of the output face of the deposition device. The substrate or a support for the substrate comprises a moving web, where the support for the substrate maintains a surface of the substrate at a separation distance of within 0.3 mm of an output face of a deposition device.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The organosiloxane polymer comprises a vinyl terminated siloxane that is crosslinked. The organosiloxane polymer is a fluorinated or partially fluorinated organosiloxane. The composition comprising the deposition inhibitor material further comprises a radiation-sensitive polymer, where the radiation-sensitive polymer is poly(methyl methacrylate). Preferred Process: The organosiloxane polymer is crosslinked after applying the polymer onto the substrate, before or during patterning in step (c). The deposition inhibitor material has an inhibition power of at least 500 A during use. The processes of applying and patterning the deposition inhibitor material comprises: depositing a uniform layer of deposition inhibitor material and subsequently patterning the layer; and pattern-wise depositing the deposition inhibitor material, where the pattern-wise deposition is inkjet printing, gravure, flexography, donor transfer, micro-contact printing, or offset lithography. The atomic layer deposition comprises spatially dependent atomic layer deposition. The spatially dependent atomic layer deposition comprises: simultaneously directing a series of gas flows along elongated substantially parallel channels, where: the series of gas flows comprise, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated many times; the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material to form the thin film; the process is carried out substantially at or above atmospheric pressure; and the temperature of the substrate during deposition is under 250 degrees C. EXAMPLE - A zinc oxide layer composed of silicon wafer substrate. Poly(methyl methacrylate)solution (5 parts of 0.4 %) in anisole/toluene and 1 part of Dehesive 944 (RTM: Polysiloxane) in toluene/heptane were mixed and spin coated at 120-180 degrees C for 1-2 minutes. The coated sample was exposed under deep UV for 5-15 minutes in the presence of nitrogen. The exposed sample was then developed by toluene 45-90 seconds to obtain deposition inhibition polymer. The patterned layer of the deposition inhibitor polymer at 1000 A degrees , thick zinc oxide semiconductor layer was deposited in the areas that the SAD polymer does not cover. Zinc oxide layer was coated on a silicon wafer substrate and a silicon wafer (62.5 mm square) was positioned on the platen of the atomic layer deposition device at 200 degrees C. The platen with the silicon substrate was positioned under coating head (had isolated channels through which flow inert nitrogen gas, a mixture of nitrogen, air, and water vapor) and a mixture of active metal alkyl vapor (diethyl zinc) in nitrogen. The spacing between the silicon wafer substrate and the coating head was adjusted to 30 microns. The flow rate of the active metal alkyl vapor was controlled by bubbling nitrogen through the pure liquid diethyl zinc, contained in an airtight bubbler by means of individual mass flow control meters. The flow of water vapor was controlled by adjusting the bubbling rate of nitrogen passed through pure water in a bubbler. Adjusting the flow rates of the individual gasses, the coating process was initiated by oscillating the coating head across the substrate for the number of cycles specified. The finished coating was a completely uniform deposit of zinc oxide. The substrate with a patterned layer of deposition inhibitor was then subjected to zinc oxide deposition. The finished patterned coating appeared as a sharp gridline pattern of zinc oxide lines.