WO2009131700-A2 -- KR2004096381-A   KOREA ADV INST SCI & TECHNOLOGY (KOAD)   CHO B W,  CHO W I,  KIM H J,  KIM H S,  LEE J G;  KR2004100058-A   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  KR2006087003-A   SAMSUNG SDI CO LTD (SMSU)   YANG H J,  HWANG S M;  KR2006087183-A   SAMSUNG SDI CO LTD (SMSU)   KIM Y J;  US2009305131-A1 -- US3430926-A   ;  US3830474-A   NEW BRUNSWICK SCI CO INC (NEWB-Non-standard);  US4086404-A   US ENERGY R & D ADMIN (USAT);  US4118801-A   KRAFT J A (KRAF-Individual)   KRAFT J A,  KRAFT H D;  US4202634-A   KRAFT J A (KRAF-Individual)   KRAFT J A,  KRAFT H D;  US4305668-A   SCI MFG IND INC (SCIN-Non-standard)   KOBALL B R,  BILBREY R A;  US4643879-A   AMERICAN HOSPITAL SUPPLY CORP (AHSC);  BAXTER INT INC (BAXT)   HANAWAY R W;  US4747693-A   KAHL M (KAHL-Individual)   KAHL M;  US4750845-A   TAIYO KAGAKU KOGYO KK (TAIC);  TAIYO SCIENTIFIC (TAIY-Non-standard);  US4834548-A   SKANDEX AB (SKAN-Non-standard)   TEMPEL A,  SORENSEN B;  US4957543-A   INCO LTD (INTN)   BABJAK J,  ETTEL V A,  PASERIN V;  US5346303-A   WALLAC OY (WALL-Non-standard)   HEINONEN A,  HIETANEN H;  US5372425-A   NEW BRUNSWICK SCI CO INC (NEWB-Non-standard)   GUT M A,  BRIGHT J,  TANNENBAUM M,  HUSSON A L;  US5374491-A   ELTECH SYSTEMS CORP (ELTE)   BRANNAN J R,  VACCARO A J,  HEALY J P;  US5558437-A   FORMA SCI INC (FORM-Non-standard)   RODE D W;  US5577837-A   FORMA SCI INC (FORM-Non-standard)   FAIGLEY S R,  FARRAR D S,  GRAHAM G J,  MARTIN P M;  US5593228-A   NEW BRUNSWICK SCI CO INC (NEWB-Non-standard)   TANNENBAUM M;  US5645800-A   ;  US5735587-A   LICONIC AG (LICO-Non-standard);  HERAEUS INSTR GMBH (HERA)   MALIN C,  SAWATZKI H,  GENTSCH J,  HELWIG G;  US5738907-A   ELTECH SYSTEMS CORP (ELTE)   VACCARO A J,  GREGG K J,  GIBBONS D W,  GREGG J S,  GRIESSER J R;  US6129428-A   HERAEUS INSTR GMBH (HERA);  LICONIC AG (LICO-Non-standard)   HELWIG G,  MALIN C;  US20010031396-A1   ;  US20030157014-A1   ;  US20030211390-A1   ;  US20040004415-A1   ;  US20040023117-A1   ;  US20040033419-A1   ;  US20040115101-A1   ;  US20040146734-A1   ;  US20040151951-A1   ;  US20040170082-A1   ;  US20040191630-A1   ;  US20040241548-A1   ;  US20050019670-A1   ;  US20050031942-A1   ;  US20050175901-A1   ;  US20050233213-A1   ;  US20060040182-A1   ;  US20060051673-A1   ;  US20070148544-A1   ;  US20070207381-A1   ;  US20080113269-A1   ;  US20080131772-A1   ;  US20080160265-A1   ;  US20090029256-A1   ;  US20090053608-A1   ;  US20090092899-A1   ;  US20090130562-A1   ;  US20090186267-A1   ;  US20090263707-A1   ;  US20090325061-A1   ;  US20100047671-A1   ;  US20100086853-A1   ;  US20100086854-A1   ;  US20100119942-A1   ;  US20100151332-A1   ;  US20110017528-A1   ;  US20110052981-A1   ;  US20110052989-A1   ;  US20110076556-A1   ;  US20110111294-A1   ;  US20110111298-A1   ;  US6171723-B1   MINNESOTA MINING & MFG CO (MINN)   LOCH R B,  LARSON J M,  FREDERICKSEN B D;  US6190032-B1   EYELA-CHINO INC (EYEL-Non-standard)   CHODA Y;  US6235427-B1   FUJI PHOTO FILM CO LTD (FUJF)   IDOTA Y;  US6251822-B1   CORNING INC (CORG)   PENG Y L,  WILLIAMS J L;  US6383687-B1   ELTECH SYSTEMS CORP (ELTE)   CAHILL M F,  GIBBONS D W;  US6475776-B1   MATSUSHITA DENKI SANGYO KK (MATU)   HIGUCHI A;  US6478524-B1   LICONIC AG (LICO-Non-standard);  US6528208-B1   UNIV CHICAGO (UYCG)   THACKERAY M M,  KEPLER K D,  VAUGHEY J T;  US6536859-B1   ZEISS JENA GMBH CARL (JENA)   BATHE W;  US6749648-B1   NANOGRAM CORP (NANO-Non-standard)   KUMAR S,  HORNE C R;  US6899970-B1   TOUCHSTONE RES LAB LTD (TOUC-Non-standard)   ROGERS D K,  PLUCINSKI J W;  US7195842-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US7235330-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US6568770-B2   KENDRO LAB PROD GMBH (KEND-Non-standard)   DICK T,  GONSKA G,  REINHARDT H;  US6638662-B2   HITACHI LTD (HITA)   KANEDA J,  TAKEUCHI S,  WATANABE N,  YAMAKI T,  MURANAKA Y,  AONO Y;  US6645671-B2   FUJITSU LTD (FUIT)   TSUTSUMI M,  HORIUCHI H,  YAMAMOTO T;  US6677082-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6680143-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6699336-B2   3M INNOVATIVE PROPERTIES CO (MINN)   TURNER R L,  FREDERICKSON B D,  KRAUSE L J,  DAHN J R,  LARCHER D C,  COURTNEY I A,  MAO O;  US6730429-B2   THACKERAY M M (THAC-Individual);  VAUGHEY J T (VAUG-Individual);  JOHNSON C S (JOHN-Individual);  FRANSSON L M L (FRAN-Individual);  EDSTROM E K (EDST-Individual);  HENRIKSEN G (HENR-Individual)   THACKERAY M M,  VAUGHEY J T,  JOHNSON C S,  FRANSSON L M L,  EDSTROM E K,  HENRIKSEN G;  US6855460-B2   VAUGHEY J T (VAUG-Individual);  FRANSSON L M L (FRAN-Individual);  THACKERAY M M (THAC-Individual)   VAUGHEY J T,  FRANSSON L M L,  THACKERAY M M;  US6979513-B2   KELLEY K C (KELL-Individual);  VOTOUPAL J J (VOTO-Individual)   KELLEY K C,  VOTOUPAL J J;  US7026074-B2   CHEN C (CHEN-Individual);  HYUNG Y E (HYUN-Individual);  VISSERS D R (VISS-Individual);  AMINE K (AMIN-Individual)   CHEN C,  HYUNG Y E,  VISSERS D R,  AMINE K;  US7205072-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7229717-B2   YAMAGUCHI A (YAMA-Individual);  MIZUTANI S (MIZU-Individual);  INOUE H (INOU-Individual);  SEKAI K (SEKA-Individual)   YAMAGUCHI A,  MIZUTANI S,  INOUE H,  SEKAI K;  US7252907-B2   TAKEUCHI M (TAKE-Individual);  YOSHIMURA S (YOSH-Individual)   TAKEUCHI M,  YOSHIMURA S;  US7273682-B2   SAMSUNG ELECTRONICS CO LTD (SMSU)   PARK Y,  JIN Y,  LEE J,  LEE S;  US7297446-B2   SANYO ELECTRIC CO LTD (SAOL)   FUKUI A,  TORIMAE M,  KUSUMOTO Y,  TARUI H;  US7338199-B2   BERTHOLD TECHNOLOGIES GMBH & CO KG (BERT-Non-standard);  US7432015-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7435402-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7452632-B2   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  US7507503-B2   UNIV CHICAGO (UYCG)   AMINE K,  LIU J,  VISSERS D R,  LU W;  US7514369-B2   NANO PTY INC (NANO-Non-standard)   LI Y,  PAVLOVSKY I;  US7517614-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7816031-B2   CUI Y (CUIY-Individual);  CHAN C K (CHAN-Individual)   CHAN C K,  CUI Y;  US35818-E   SEIKO ELECTRONIC COMPONENTS LTD (DASE);  SEIKO INSTR INC (DASE)   SAKATA A,  IWASAKI F,  YAHAGI S,  SAKAI T,  TAHARA K,  ISHIKAWA H;  US2010119942-A1 -- US4086404-A   US ENERGY R & D ADMIN (USAT);  US4957543-A   INCO LTD (INTN)   BABJAK J,  ETTEL V A,  PASERIN V;  US5374491-A   ELTECH SYSTEMS CORP (ELTE)   BRANNAN J R,  VACCARO A J,  HEALY J P;  US5738907-A   ELTECH SYSTEMS CORP (ELTE)   VACCARO A J,  GREGG K J,  GIBBONS D W,  GREGG J S,  GRIESSER J R;  US20010031396-A1   ;  US20030157014-A1   ;  US20030157407-A1   ;  US20030211390-A1   ;  US20040023117-A1   ;  US20040033419-A1   ;  US20040146734-A1   ;  US20040151951-A1   ;  US20040191630-A1   ;  US20040241548-A1   ;  US20050019670-A1   ;  US20050031942-A1   ;  US20050175901-A1   ;  US20050233213-A1   ;  US20060040182-A1   ;  US20060051673-A1   ;  US20060068285-A1   ;  US20060115734-A1   ;  US20070048612-A1   ;  US20070148544-A1   ;  US20080113269-A1   ;  US20080131772-A1   ;  US20080193831-A1   ;  US20090029256-A1   ;  US20090092899-A1   ;  US20090117466-A1   ;  US20090130562-A1   ;  US20090186267-A1   ;  US20090263707-A1   ;  US20090305131-A1   ;  US20090317721-A1   ;  US20090325061-A1   ;  US20100047671-A1   ;  US20100086853-A1   ;  US20100086854-A1   ;  US20100151332-A1   ;  US20110017528-A1   ;  US20110052981-A1   ;  US20110052989-A1   ;  US20110076556-A1   ;  US20110085960-A1   ;  US20110111294-A1   ;  US20110111298-A1   ;  US20110136019-A1   ;  US20110244331-A1   ;  US20120028105-A1   ;  US20120056590-A1   ;  US20120105007-A1   ;  US20120107680-A1   ;  US6171723-B1   MINNESOTA MINING & MFG CO (MINN)   LOCH R B,  LARSON J M,  FREDERICKSEN B D;  US6235427-B1   FUJI PHOTO FILM CO LTD (FUJF)   IDOTA Y;  US6251822-B1   CORNING INC (CORG)   PENG Y L,  WILLIAMS J L;  US6335115-B1   VARTA BATTERIE AG (VART)   MEISSNER E;  US6383687-B1   ELTECH SYSTEMS CORP (ELTE)   CAHILL M F,  GIBBONS D W;  US6528208-B1   UNIV CHICAGO (UYCG)   THACKERAY M M,  KEPLER K D,  VAUGHEY J T;  US6749648-B1   NANOGRAM CORP (NANO-Non-standard)   KUMAR S,  HORNE C R;  US6899970-B1   TOUCHSTONE RES LAB LTD (TOUC-Non-standard)   ROGERS D K,  PLUCINSKI J W;  US7195842-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US7235330-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US6638662-B2   HITACHI LTD (HITA)   KANEDA J,  TAKEUCHI S,  WATANABE N,  YAMAKI T,  MURANAKA Y,  AONO Y;  US6645671-B2   FUJITSU LTD (FUIT)   TSUTSUMI M,  HORIUCHI H,  YAMAMOTO T;  US6677082-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6680143-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6699336-B2   3M INNOVATIVE PROPERTIES CO (MINN)   TURNER R L,  FREDERICKSON B D,  KRAUSE L J,  DAHN J R,  LARCHER D C,  COURTNEY I A,  MAO O;  US6730429-B2   THACKERAY M M (THAC-Individual);  VAUGHEY J T (VAUG-Individual);  JOHNSON C S (JOHN-Individual);  FRANSSON L M L (FRAN-Individual);  EDSTROM E K (EDST-Individual);  HENRIKSEN G (HENR-Individual)   THACKERAY M M,  VAUGHEY J T,  JOHNSON C S,  FRANSSON L M L,  EDSTROM E K,  HENRIKSEN G;  US6855460-B2   VAUGHEY J T (VAUG-Individual);  FRANSSON L M L (FRAN-Individual);  THACKERAY M M (THAC-Individual)   VAUGHEY J T,  FRANSSON L M L,  THACKERAY M M;  US6979513-B2   KELLEY K C (KELL-Individual);  VOTOUPAL J J (VOTO-Individual)   KELLEY K C,  VOTOUPAL J J;  US7026074-B2   CHEN C (CHEN-Individual);  HYUNG Y E (HYUN-Individual);  VISSERS D R (VISS-Individual);  AMINE K (AMIN-Individual)   CHEN C,  HYUNG Y E,  VISSERS D R,  AMINE K;  US7205072-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7229717-B2   YAMAGUCHI A (YAMA-Individual);  MIZUTANI S (MIZU-Individual);  INOUE H (INOU-Individual);  SEKAI K (SEKA-Individual)   YAMAGUCHI A,  MIZUTANI S,  INOUE H,  SEKAI K;  US7252907-B2   TAKEUCHI M (TAKE-Individual);  YOSHIMURA S (YOSH-Individual)   TAKEUCHI M,  YOSHIMURA S;  US7273682-B2   SAMSUNG ELECTRONICS CO LTD (SMSU)   PARK Y,  JIN Y,  LEE J,  LEE S;  US7297446-B2   SANYO ELECTRIC CO LTD (SAOL)   FUKUI A,  TORIMAE M,  KUSUMOTO Y,  TARUI H;  US7416813-B2   SANYO ELECTRIC CO LTD (SAOL)   FUJIHARA T,  TAKEDA K,  KITAO H,  IKEMACHI T,  NOHMA T,  NAKANISHI N;  US7432015-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7435402-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7452631-B2   KITAO H (KITA-Individual);  FUJIHARA T (FUJI-Individual);  TAKEDA K (TAKE-Individual);  NAKANISHI N (NAKA-Individual);  NOHMA T (NOHM-Individual)   KITAO H,  FUJIHARA T,  TAKEDA K,  NAKANISHI N,  NOHMA T;  US7452632-B2   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  US7507503-B2   UNIV CHICAGO (UYCG)   AMINE K,  LIU J,  VISSERS D R,  LU W;  US7514369-B2   NANO PTY INC (NANO-Non-standard)   LI Y,  PAVLOVSKY I;  US7517614-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7615314-B2   CANON KK (CANO)   KAWAKAMI S,  MORITA A,  OGURA T;  US7776473-B2   SHINETSU CHEM CO LTD (SHIE)   ARAMATA M,  WATANABE K,  MIYAWAKI S,  KASHIDA M,  FUKUOKA H;  US7851085-B2   3M INNOVATIVE PROPERTIES CO (MINN)   OBROVAC M N,  CHRISTENSEN L;  US7871727-B2   3M INNOVATIVE PROPERTIES CO (MINN)   OBROVAC M N,  CHRISTENSEN L;  US35818-E   SEIKO ELECTRONIC COMPONENTS LTD (DASE);  SEIKO INSTR INC (DASE)   SAKATA A,  IWASAKI F,  YAHAGI S,  SAKAI T,  TAHARA K,  ISHIKAWA H;  US8277974-B2 -- EP2141759-A1   SAMSUNG SDI CO LTD (SMSU)   LIM W M;  EP2079120-A2   SAMSUNG SDI CO LTD (SMSU)   KIM J;  JP07065825-A   ;  KR2004096381-A   KOREA ADV INST SCI & TECHNOLOGY (KOAD)   CHO B W,  CHO W I,  KIM H J,  KIM H S,  LEE J G;  KR2004100058-A   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  KR2006087003-A   SAMSUNG SDI CO LTD (SMSU)   YANG H J,  HWANG S M;  KR2006087183-A   SAMSUNG SDI CO LTD (SMSU)   KIM Y J;  KR493960-B   LG CHEM LTD (GLDS)   KWON O J,  LEE G Y,  LEE S J,  OH S M,  RYU J H;  US4086404-A   US ENERGY R & D ADMIN (USAT);  US4957543-A   INCO LTD (INTN)   BABJAK J,  ETTEL V A,  PASERIN V;  US5374491-A   ELTECH SYSTEMS CORP (ELTE)   BRANNAN J R,  VACCARO A J,  HEALY J P;  US5738907-A   ELTECH SYSTEMS CORP (ELTE)   VACCARO A J,  GREGG K J,  GIBBONS D W,  GREGG J S,  GRIESSER J R;  US20010031396-A1   ;  US20030157014-A1   ;  US20030211390-A1   ;  US20040023117-A1   ;  US20040033419-A1   ;  US20040146734-A1   ;  US20040151951-A1   ;  US20040191630-A1   ;  US20040241548-A1   ;  US20050019670-A1   ;  US20050031942-A1   ;  US20050175901-A1   ;  US20050233213-A1   ;  US20060040182-A1   ;  US20060051673-A1   ;  US20070148544-A1   ;  US20070207381-A1   ;  US20080113269-A1   ;  US20080131772-A1   ;  US20080160265-A1   ;  US20090029256-A1   ;  US20090053608-A1   ;  US20090092899-A1   ;  US20090130562-A1   ;  US20090186267-A1   ;  US20090263707-A1   ;  US20090325061-A1   ;  US20100047671-A1   ;  US20100086853-A1   ;  US20100086854-A1   ;  US20100119942-A1   ;  US20100151332-A1   ;  US20110017528-A1   ;  US20110052981-A1   ;  US20110052989-A1   ;  US20110076556-A1   ;  US20110111294-A1   ;  US20110111298-A1   ;  US20110136019-A1   ;  US20110244331-A1   ;  US20120105007-A1   ;  US20120107680-A1   ;  US6171723-B1   MINNESOTA MINING & MFG CO (MINN)   LOCH R B,  LARSON J M,  FREDERICKSEN B D;  US6235427-B1   FUJI PHOTO FILM CO LTD (FUJF)   IDOTA Y;  US6251822-B1   CORNING INC (CORG)   PENG Y L,  WILLIAMS J L;  US6383687-B1   ELTECH SYSTEMS CORP (ELTE)   CAHILL M F,  GIBBONS D W;  US6528208-B1   UNIV CHICAGO (UYCG)   THACKERAY M M,  KEPLER K D,  VAUGHEY J T;  US6749648-B1   NANOGRAM CORP (NANO-Non-standard)   KUMAR S,  HORNE C R;  US6899970-B1   TOUCHSTONE RES LAB LTD (TOUC-Non-standard)   ROGERS D K,  PLUCINSKI J W;  US7195842-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US7235330-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US6638662-B2   HITACHI LTD (HITA)   KANEDA J,  TAKEUCHI S,  WATANABE N,  YAMAKI T,  MURANAKA Y,  AONO Y;  US6645671-B2   FUJITSU LTD (FUIT)   TSUTSUMI M,  HORIUCHI H,  YAMAMOTO T;  US6677082-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6680143-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6699336-B2   3M INNOVATIVE PROPERTIES CO (MINN)   TURNER R L,  FREDERICKSON B D,  KRAUSE L J,  DAHN J R,  LARCHER D C,  COURTNEY I A,  MAO O;  US6730429-B2   THACKERAY M M (THAC-Individual);  VAUGHEY J T (VAUG-Individual);  JOHNSON C S (JOHN-Individual);  FRANSSON L M L (FRAN-Individual);  EDSTROM E K (EDST-Individual);  HENRIKSEN G (HENR-Individual)   THACKERAY M M,  VAUGHEY J T,  JOHNSON C S,  FRANSSON L M L,  EDSTROM E K,  HENRIKSEN G;  US6855460-B2   VAUGHEY J T (VAUG-Individual);  FRANSSON L M L (FRAN-Individual);  THACKERAY M M (THAC-Individual)   VAUGHEY J T,  FRANSSON L M L,  THACKERAY M M;  US6979513-B2   KELLEY K C (KELL-Individual);  VOTOUPAL J J (VOTO-Individual)   KELLEY K C,  VOTOUPAL J J;  US7026074-B2   CHEN C (CHEN-Individual);  HYUNG Y E (HYUN-Individual);  VISSERS D R (VISS-Individual);  AMINE K (AMIN-Individual)   CHEN C,  HYUNG Y E,  VISSERS D R,  AMINE K;  US7205072-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7229717-B2   YAMAGUCHI A (YAMA-Individual);  MIZUTANI S (MIZU-Individual);  INOUE H (INOU-Individual);  SEKAI K (SEKA-Individual)   YAMAGUCHI A,  MIZUTANI S,  INOUE H,  SEKAI K;  US7252907-B2   TAKEUCHI M (TAKE-Individual);  YOSHIMURA S (YOSH-Individual)   TAKEUCHI M,  YOSHIMURA S;  US7273682-B2   SAMSUNG ELECTRONICS CO LTD (SMSU)   PARK Y,  JIN Y,  LEE J,  LEE S;  US7297446-B2   SANYO ELECTRIC CO LTD (SAOL)   FUKUI A,  TORIMAE M,  KUSUMOTO Y,  TARUI H;  US7432015-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7435402-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7452632-B2   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  US7507503-B2   UNIV CHICAGO (UYCG)   AMINE K,  LIU J,  VISSERS D R,  LU W;  US7514369-B2   NANO PTY INC (NANO-Non-standard)   LI Y,  PAVLOVSKY I;  US7517614-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7816031-B2   CUI Y (CUIY-Individual);  CHAN C K (CHAN-Individual)   CHAN C K,  CUI Y;  US35818-E   SEIKO ELECTRONIC COMPONENTS LTD (DASE);  SEIKO INSTR INC (DASE)   SAKATA A,  IWASAKI F,  YAHAGI S,  SAKAI T,  TAHARA K,  ISHIKAWA H;  WO2001035473-A1   ;  WO2005011030-A1   LG CHEM LTD (GLDS);  UNIV KANGWON NAT IND COOP FOUND (UYKA-Non-standard)   LEE S,  LEE H Y,  HONG M K;  WO2006109930-A1   DAEJUNG CHEM & METALS CO LTD (DAEJ-Non-standard);  SUN Y K (SUNY-Individual);  KIM W S (KIMW-Individual);  HAN J M (HANJ-Individual);  WO2007126257-A1   LG CHEM LTD (GLDS)   KIM J,  ROH S M,  SHIN Y,  HWANG S;  WO2005076389-A2   UNIV CARNEGIE MELLON (UYCM)   KUMTA P N,  MARANCHI J,  DATTA M;  US8673490-B2 -- EP2141759-A1   SAMSUNG SDI CO LTD (SMSU)   LIM W M;  EP2079120-A2   SAMSUNG SDI CO LTD (SMSU)   KIM J;  JP07065825-A   ;  KR2004096381-A   KOREA ADV INST SCI & TECHNOLOGY (KOAD)   CHO B W,  CHO W I,  KIM H J,  KIM H S,  LEE J G;  KR2004100058-A   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  KR2006087003-A   SAMSUNG SDI CO LTD (SMSU)   YANG H J,  HWANG S M;  KR2006087183-A   SAMSUNG SDI CO LTD (SMSU)   KIM Y J;  KR493960-B   LG CHEM LTD (GLDS)   KWON O J,  LEE G Y,  LEE S J,  OH S M,  RYU J H;  US4086404-A   US ENERGY R & D ADMIN (USAT);  US4957543-A   INCO LTD (INTN)   BABJAK J,  ETTEL V A,  PASERIN V;  US5374491-A   ELTECH SYSTEMS CORP (ELTE)   BRANNAN J R,  VACCARO A J,  HEALY J P;  US5738907-A   ELTECH SYSTEMS CORP (ELTE)   VACCARO A J,  GREGG K J,  GIBBONS D W,  GREGG J S,  GRIESSER J R;  US20010031396-A1   ;  US20030157014-A1   ;  US20030157407-A1   ;  US20030211390-A1   ;  US20040023117-A1   ;  US20040033419-A1   ;  US20040146734-A1   ;  US20040151951-A1   ;  US20040191630-A1   ;  US20040241548-A1   ;  US20050019670-A1   ;  US20050031942-A1   ;  US20050175901-A1   ;  US20050233213-A1   ;  US20060040182-A1   ;  US20060051673-A1   ;  US20060068285-A1   ;  US20060115734-A1   ;  US20070048612-A1   ;  US20070148544-A1   ;  US20070207381-A1   ;  US20080113269-A1   ;  US20080131772-A1   ;  US20080160265-A1   ;  US20080193831-A1   ;  US20090029256-A1   ;  US20090053608-A1   ;  US20090092899-A1   ;  US20090117466-A1   ;  US20090130562-A1   ;  US20090186267-A1   ;  US20090263707-A1   ;  US20090317721-A1   ;  US20090325061-A1   ;  US20100047671-A1   ;  US20100086853-A1   ;  US20100086854-A1   ;  US20100119942-A1   ;  US20100151332-A1   ;  US20110017528-A1   ;  US20110052981-A1   ;  US20110052989-A1   ;  US20110076556-A1   ;  US20110085960-A1   ;  US20110111294-A1   ;  US20110111298-A1   ;  US20110136019-A1   ;  US20110244331-A1   ;  US20120028105-A1   ;  US20120056590-A1   ;  US20120105007-A1   ;  US20120107680-A1   ;  US6171723-B1   MINNESOTA MINING & MFG CO (MINN)   LOCH R B,  LARSON J M,  FREDERICKSEN B D;  US6235427-B1   FUJI PHOTO FILM CO LTD (FUJF)   IDOTA Y;  US6251822-B1   CORNING INC (CORG)   PENG Y L,  WILLIAMS J L;  US6335115-B1   VARTA BATTERIE AG (VART)   MEISSNER E;  US6383687-B1   ELTECH SYSTEMS CORP (ELTE)   CAHILL M F,  GIBBONS D W;  US6528208-B1   UNIV CHICAGO (UYCG)   THACKERAY M M,  KEPLER K D,  VAUGHEY J T;  US6749648-B1   NANOGRAM CORP (NANO-Non-standard)   KUMAR S,  HORNE C R;  US6899970-B1   TOUCHSTONE RES LAB LTD (TOUC-Non-standard)   ROGERS D K,  PLUCINSKI J W;  US7195842-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US7235330-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US6638662-B2   HITACHI LTD (HITA)   KANEDA J,  TAKEUCHI S,  WATANABE N,  YAMAKI T,  MURANAKA Y,  AONO Y;  US6645671-B2   FUJITSU LTD (FUIT)   TSUTSUMI M,  HORIUCHI H,  YAMAMOTO T;  US6677082-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6680143-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6699336-B2   3M INNOVATIVE PROPERTIES CO (MINN)   TURNER R L,  FREDERICKSON B D,  KRAUSE L J,  DAHN J R,  LARCHER D C,  COURTNEY I A,  MAO O;  US6730429-B2   THACKERAY M M (THAC-Individual);  VAUGHEY J T (VAUG-Individual);  JOHNSON C S (JOHN-Individual);  FRANSSON L M L (FRAN-Individual);  EDSTROM E K (EDST-Individual);  HENRIKSEN G (HENR-Individual)   THACKERAY M M,  VAUGHEY J T,  JOHNSON C S,  FRANSSON L M L,  EDSTROM E K,  HENRIKSEN G;  US6855460-B2   VAUGHEY J T (VAUG-Individual);  FRANSSON L M L (FRAN-Individual);  THACKERAY M M (THAC-Individual)   VAUGHEY J T,  FRANSSON L M L,  THACKERAY M M;  US6979513-B2   KELLEY K C (KELL-Individual);  VOTOUPAL J J (VOTO-Individual)   KELLEY K C,  VOTOUPAL J J;  US7026074-B2   CHEN C (CHEN-Individual);  HYUNG Y E (HYUN-Individual);  VISSERS D R (VISS-Individual);  AMINE K (AMIN-Individual)   CHEN C,  HYUNG Y E,  VISSERS D R,  AMINE K;  US7205072-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7229717-B2   YAMAGUCHI A (YAMA-Individual);  MIZUTANI S (MIZU-Individual);  INOUE H (INOU-Individual);  SEKAI K (SEKA-Individual)   YAMAGUCHI A,  MIZUTANI S,  INOUE H,  SEKAI K;  US7252907-B2   TAKEUCHI M (TAKE-Individual);  YOSHIMURA S (YOSH-Individual)   TAKEUCHI M,  YOSHIMURA S;  US7273682-B2   SAMSUNG ELECTRONICS CO LTD (SMSU)   PARK Y,  JIN Y,  LEE J,  LEE S;  US7297446-B2   SANYO ELECTRIC CO LTD (SAOL)   FUKUI A,  TORIMAE M,  KUSUMOTO Y,  TARUI H;  US7432015-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7435402-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7452632-B2   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  US7507503-B2   UNIV CHICAGO (UYCG)   AMINE K,  LIU J,  VISSERS D R,  LU W;  US7514369-B2   NANO PTY INC (NANO-Non-standard)   LI Y,  PAVLOVSKY I;  US7517614-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7615314-B2   CANON KK (CANO)   KAWAKAMI S,  MORITA A,  OGURA T;  US7776473-B2   SHINETSU CHEM CO LTD (SHIE)   ARAMATA M,  WATANABE K,  MIYAWAKI S,  KASHIDA M,  FUKUOKA H;  US7816031-B2   CUI Y (CUIY-Individual);  CHAN C K (CHAN-Individual)   CHAN C K,  CUI Y;  US7851085-B2   3M INNOVATIVE PROPERTIES CO (MINN)   OBROVAC M N,  CHRISTENSEN L;  US7871727-B2   3M INNOVATIVE PROPERTIES CO (MINN)   OBROVAC M N,  CHRISTENSEN L;  US35818-E   SEIKO ELECTRONIC COMPONENTS LTD (DASE);  SEIKO INSTR INC (DASE)   SAKATA A,  IWASAKI F,  YAHAGI S,  SAKAI T,  TAHARA K,  ISHIKAWA H;  WO2001035473-A1   ;  WO2005011030-A1   LG CHEM LTD (GLDS);  UNIV KANGWON NAT IND COOP FOUND (UYKA-Non-standard)   LEE S,  LEE H Y,  HONG M K;  WO2006109930-A1   DAEJUNG CHEM & METALS CO LTD (DAEJ-Non-standard);  SUN Y K (SUNY-Individual);  KIM W S (KIMW-Individual);  HAN J M (HANJ-Individual);  WO2007126257-A1   LG CHEM LTD (GLDS)   KIM J,  ROH S M,  SHIN Y,  HWANG S;  WO2011053736-A1   UNIV RICE (RICV);  LOCKHEED MARTIN CORP (LOCK)   BISWAL S L,  WONG M S,  THAKUR M,  SINSABAUGH S L,  ISAACSON M J;  WO2005065082-A2   MAO Z (MAOZ-Individual);  CHAHAR B (CHAH-Individual)   MAO Z,  CHAHAR B;  WO2005076389-A2   UNIV CARNEGIE MELLON (UYCM)   KUMTA P N,  MARANCHI J,  DATTA M;  US9012073-B2 -- EP2141759-A1   SAMSUNG SDI CO LTD (SMSU)   LIM W M;  EP2079120-A2   SAMSUNG SDI CO LTD (SMSU)   KIM J;  KR2004096381-A   KOREA ADV INST SCI & TECHNOLOGY (KOAD)   CHO B W,  CHO W I,  KIM H J,  KIM H S,  LEE J G;  KR2004100058-A   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  KR2006087003-A   SAMSUNG SDI CO LTD (SMSU)   YANG H J,  HWANG S M;  KR2006087183-A   SAMSUNG SDI CO LTD (SMSU)   KIM Y J;  KR493960-B   LG CHEM LTD (GLDS)   KWON O J,  LEE G Y,  LEE S J,  OH S M,  RYU J H;  US4086404-A   US ENERGY R & D ADMIN (USAT);  US4957543-A   INCO LTD (INTN)   BABJAK J,  ETTEL V A,  PASERIN V;  US5374491-A   ELTECH SYSTEMS CORP (ELTE)   BRANNAN J R,  VACCARO A J,  HEALY J P;  US5738907-A   ELTECH SYSTEMS CORP (ELTE)   VACCARO A J,  GREGG K J,  GIBBONS D W,  GREGG J S,  GRIESSER J R;  US20010031396-A1   ;  US20030157014-A1   ;  US20030157407-A1   ;  US20030211390-A1   ;  US20040023117-A1   ;  US20040033419-A1   ;  US20040146734-A1   ;  US20040151951-A1   ;  US20040191630-A1   ;  US20040241548-A1   ;  US20050019670-A1   ;  US20050031942-A1   ;  US20050175901-A1   ;  US20050233213-A1   ;  US20060040182-A1   ;  US20060051673-A1   ;  US20060068285-A1   ;  US20060115734-A1   ;  US20070048612-A1   ;  US20070148544-A1   ;  US20080113269-A1   ;  US20080131772-A1   ;  US20080193831-A1   ;  US20090029256-A1   ;  US20090092899-A1   ;  US20090117466-A1   ;  US20090130562-A1   ;  US20090186267-A1   ;  US20090263707-A1   ;  US20090305131-A1   ;  US20090317721-A1   ;  US20090325061-A1   ;  US20100047671-A1   ;  US20100086853-A1   ;  US20100086854-A1   ;  US20100151332-A1   ;  US20110017528-A1   ;  US20110052981-A1   ;  US20110052989-A1   ;  US20110076556-A1   ;  US20110085960-A1   ;  US20110111294-A1   ;  US20110111298-A1   ;  US20110136019-A1   ;  US20110244331-A1   ;  US20120028105-A1   ;  US20120056590-A1   ;  US20120105007-A1   ;  US20120107680-A1   ;  US6171723-B1   MINNESOTA MINING & MFG CO (MINN)   LOCH R B,  LARSON J M,  FREDERICKSEN B D;  US6235427-B1   FUJI PHOTO FILM CO LTD (FUJF)   IDOTA Y;  US6251822-B1   CORNING INC (CORG)   PENG Y L,  WILLIAMS J L;  US6335115-B1   VARTA BATTERIE AG (VART)   MEISSNER E;  US6383687-B1   ELTECH SYSTEMS CORP (ELTE)   CAHILL M F,  GIBBONS D W;  US6528208-B1   UNIV CHICAGO (UYCG)   THACKERAY M M,  KEPLER K D,  VAUGHEY J T;  US6749648-B1   NANOGRAM CORP (NANO-Non-standard)   KUMAR S,  HORNE C R;  US6899970-B1   TOUCHSTONE RES LAB LTD (TOUC-Non-standard)   ROGERS D K,  PLUCINSKI J W;  US7195842-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US7235330-B1   SANYO ELECTRIC CO LTD (SAOL)   IKEDA H,  FUJIMOTO M,  FUJITANI S,  SHIMA M,  YAGI H,  TARUI H,  KUROKAWA H,  ASAOKA K,  MATSUTA S,  DOMOTO Y,  OHSHITA R,  KATO Y,  NAKAJIMA H;  US6638662-B2   HITACHI LTD (HITA)   KANEDA J,  TAKEUCHI S,  WATANABE N,  YAMAKI T,  MURANAKA Y,  AONO Y;  US6645671-B2   FUJITSU LTD (FUIT)   TSUTSUMI M,  HORIUCHI H,  YAMAMOTO T;  US6677082-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6680143-B2   THACKERAY M M (THAC-Individual);  JOHNSON C S (JOHN-Individual);  AMINE K (AMIN-Individual);  KIM J (KIMJ-Individual)   THACKERAY M M,  JOHNSON C S,  AMINE K,  KIM J;  US6699336-B2   3M INNOVATIVE PROPERTIES CO (MINN)   TURNER R L,  FREDERICKSON B D,  KRAUSE L J,  DAHN J R,  LARCHER D C,  COURTNEY I A,  MAO O;  US6730429-B2   THACKERAY M M (THAC-Individual);  VAUGHEY J T (VAUG-Individual);  JOHNSON C S (JOHN-Individual);  FRANSSON L M L (FRAN-Individual);  EDSTROM E K (EDST-Individual);  HENRIKSEN G (HENR-Individual)   THACKERAY M M,  VAUGHEY J T,  JOHNSON C S,  FRANSSON L M L,  EDSTROM E K,  HENRIKSEN G;  US6855460-B2   VAUGHEY J T (VAUG-Individual);  FRANSSON L M L (FRAN-Individual);  THACKERAY M M (THAC-Individual)   VAUGHEY J T,  FRANSSON L M L,  THACKERAY M M;  US6979513-B2   KELLEY K C (KELL-Individual);  VOTOUPAL J J (VOTO-Individual)   KELLEY K C,  VOTOUPAL J J;  US7026074-B2   CHEN C (CHEN-Individual);  HYUNG Y E (HYUN-Individual);  VISSERS D R (VISS-Individual);  AMINE K (AMIN-Individual)   CHEN C,  HYUNG Y E,  VISSERS D R,  AMINE K;  US7205072-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7229717-B2   YAMAGUCHI A (YAMA-Individual);  MIZUTANI S (MIZU-Individual);  INOUE H (INOU-Individual);  SEKAI K (SEKA-Individual)   YAMAGUCHI A,  MIZUTANI S,  INOUE H,  SEKAI K;  US7252907-B2   TAKEUCHI M (TAKE-Individual);  YOSHIMURA S (YOSH-Individual)   TAKEUCHI M,  YOSHIMURA S;  US7273682-B2   SAMSUNG ELECTRONICS CO LTD (SMSU)   PARK Y,  JIN Y,  LEE J,  LEE S;  US7297446-B2   SANYO ELECTRIC CO LTD (SAOL)   FUKUI A,  TORIMAE M,  KUSUMOTO Y,  TARUI H;  US7416813-B2   SANYO ELECTRIC CO LTD (SAOL)   FUJIHARA T,  TAKEDA K,  KITAO H,  IKEMACHI T,  NOHMA T,  NAKANISHI N;  US7432015-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7435402-B2   UNIV CHICAGO (UYCG)   KANG S,  AMINE K;  US7452631-B2   KITAO H (KITA-Individual);  FUJIHARA T (FUJI-Individual);  TAKEDA K (TAKE-Individual);  NAKANISHI N (NAKA-Individual);  NOHMA T (NOHM-Individual)   KITAO H,  FUJIHARA T,  TAKEDA K,  NAKANISHI N,  NOHMA T;  US7452632-B2   SAMSUNG SDI CO LTD (SMSU)   LEE S,  SHEEM K,  KIM S,  KIM J,  OH S;  US7507503-B2   UNIV CHICAGO (UYCG)   AMINE K,  LIU J,  VISSERS D R,  LU W;  US7514369-B2   NANO PTY INC (NANO-Non-standard)   LI Y,  PAVLOVSKY I;  US7517614-B2   JEONG G (JEON-Individual);  LEE S (LEES-Individual);  KIM S (KIMS-Individual);  NITTA Y (NITT-Individual)   JEONG G,  LEE S,  KIM S,  NITTA Y;  US7615314-B2   CANON KK (CANO)   KAWAKAMI S,  MORITA A,  OGURA T;  US7776473-B2   SHINETSU CHEM CO LTD (SHIE)   ARAMATA M,  WATANABE K,  MIYAWAKI S,  KASHIDA M,  FUKUOKA H;  US7851085-B2   3M INNOVATIVE PROPERTIES CO (MINN)   OBROVAC M N,  CHRISTENSEN L;  US7871727-B2   3M INNOVATIVE PROPERTIES CO (MINN)   OBROVAC M N,  CHRISTENSEN L;  US35818-E   SEIKO ELECTRONIC COMPONENTS LTD (DASE);  SEIKO INSTR INC (DASE)   SAKATA A,  IWASAKI F,  YAHAGI S,  SAKAI T,  TAHARA K,  ISHIKAWA H;  WO2001035473-A1   ;  WO2006109930-A1   DAEJUNG CHEM & METALS CO LTD (DAEJ-Non-standard);  SUN Y K (SUNY-Individual);  KIM W S (KIMW-Individual);  HAN J M (HANJ-Individual);  WO2007126257-A1   LG CHEM LTD (GLDS)   KIM J,  ROH S M,  SHIN Y,  HWANG S;  WO2011053736-A1   UNIV RICE (RICV);  LOCKHEED MARTIN CORP (LOCK)   BISWAL S L,  WONG M S,  THAKUR M,  SINSABAUGH S L,  ISAACSON M J;  WO2005065082-A2   MAO Z (MAOZ-Individual);  CHAHAR B (CHAH-Individual)   MAO Z,  CHAHAR B;  WO2005076389-A2   UNIV CARNEGIE MELLON (UYCM)   KUMTA P N,  MARANCHI J,  DATTA M