NOVELTY - A mixed-type heterojunction thin-film solar cell structure comprises conductive substrate (10); a conjugate polymer layer (14) formed on the conductive substrate; an inorganic wire array (16) inserted into the conjugate polymer layer but not contacting the conductive layer; and an electrode layer (24) covering the inorganic wire array and the conjugate polymer layer. The hole blocking layer (22) is formed in between the conjugate polymer layer and the electrode layer to cover the conjugate polymer layer and the inorganic wire array.    USE - As a mixed-type heterojunction thin-film solar cell (claimed) useful for conversion of solar energy.    ADVANTAGE - The solar cell structure has flexibility and high energy conversion efficiency; and fabricates in low cost.    DETAILED DESCRIPTION - A mixed-type heterojunction thin-film solar cell structure comprises conductive substrate (10); a conjugate polymer layer (14) formed on the conductive substrate; an inorganic wire array (16) inserted into the conjugate polymer layer but not contacting the conductive layer; and an electrode layer (24) covering the inorganic wire array and the conjugate polymer layer. The hole blocking layer (22) is formed in between the conjugate polymer layer and the electrode layer to cover the conjugate polymer layer and the inorganic wire array, the hole blocking layer is made of a material selected from zinc oxide, titanium oxide, (6,6)-phenyl 61C butyric acid methyl ester, lithium fluoride, calcium compound and an alkali compound. The alkali compound is Li2O, LiBO2, K2SiO3, or Cs2CO3. The non-conductive layer is formed in between the conjugate polymer layer and the electrode layer to protect the inorganic wire array. The transparent material is polymethylmethacrylate, Spin-On Glass, silicon dioxide, and silicon nitride. The inorganic wire array is made of a material selected from silicon, germanium, gallium arsenide, indium phosphide, gallium phosphide, gallium antimonide, zinc telluride, indium gallium nitride, a single element, a binary compound semiconductor, and a compound semiconductor containing more than two components. The conjugate polymer layer is made of a material selected from a group consisting of poly-3-hexylthiophene, poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene), poly(2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta(2,1-b;3,4-b)-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)), O1-10C-poly phenylene vinylene (PPV) (poly(2-(3,7-dimethyloctyloxy)-5-methoxy-p-phenylene vinylene)), poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene)(MDMO-PPV)(poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene)), and Polyfluorene. The conductive substrate is made of transparent conductive substrate, a transparent-electrode glass substrate, a transparent-electrode plastic substrate, a transparent-electrode quartz substrate and a thin metallic plate. The electrode layer is made of a metal, a transparent-electrode material, or a material selected from indium tin oxide, gallium indium tin oxide, zinc indium tin oxide), fluorine-doped tin oxide, zinc oxide, aluminum zinc oxide and indium zinc oxide. The hole transport layer is made of a material selected from poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate), (poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))-diphenylamine):4,4'-bis((p-trichlorosilylpropylphenyl)phenylamino)biphenyl), copper phthalocyanine), and (4,4',4''-tris-N-naphthyl-N-phenylamino-triphenylamine). The electron-blocking layer is made of a material selected from (N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine), (poly(9,9-dioctylfluorene-co-N,N'-di(phenyl)-N,N'-di(3-carboethoxyphenyl)benzidine), (4,4-bis(N-(1-naphthyl-1-)-N-phenyl-amino)-biphenyl), (N,N'-diphenyl-N,N'-bis(di(3-methylphenyl)aminobiphenyl)benzidine), a polycarboxy-polymer, a quaternized polyamine-polymer, a polysulphato-polymer, a polysulpho-polymer, and a poly (vinylphosphonic acid). The inorganic wire array is made of a material selected from silicon, germanium, gallium arsenide, indium phosphide, gallium phosphide, antimony selenide, indium gallium nitride, a single element, a binary compound semiconductor, and a compound semiconductor containing more than two components. The substrate is a semiconductor substrate. An INDEPENDENT CLAIM is included for fabricating a mixed-type heterojunction thin-film solar cell structure involving providing a conductive substrate and a template, where the template has an inorganic wire array and a substrate, and the inorganic wire array is formed on the substrate; forming a conjugate polymer layer on the conductive substrate; embedding the inorganic wire array into the conjugate polymer layer, and separating the substrate from the inorganic wire array; and forming an electrode layer over the inorganic wire array and the conjugate polymer layer.    DESCRIPTION OF DRAWING(S) - The figure shows view of solar cell structure.    Conductive substrate (10)    Conjugate polymer layer (14)    Wire array (16)    Blocking layer (22)    Electrode layer (24)