NOVELTY - A copper-indium-gallium-selenium-sulfide, copper-indium-gallium-selenium, or copper-indium-gallium-selenium thin film solar cell absorption layer is prepared by plating a metal precursor film (3) of copper, indium, gallium on a bottom conductive film (2) provided on a substrate (1); putting the module in a reaction container (4), vacuumizing, sending the protective gas, and selenylation reaction source and/or sulfidization reaction source, heating and carrying out plasma discharge; and carrying out selenylation and/or sulfidization reactions on the metal precursor film.    USE - Method for preparing copper-indium-gallium-selenium-sulfide (CuInGaSeS), CuInGaSe or CuInGaS thin film solar cell absorption layer.    ADVANTAGE - The method can keep the high conversion efficiency of the original method as well as can avoid using hypertoxic gas such as hydrogen selenide or hydrogen sulfide, improves the coating process safety and the utilization efficiency of the selenium source and/or sulfur source.    DETAILED DESCRIPTION - Preparing copper-indium-gallium-selenium-sulfide (CuInGaSeS), CuInGaSe or CuInGaS thin film solar cell absorption layer comprises:    (A) preparing a bottom conductive film (2) on a substrate (1) by mask evaporation or sputtering;    (B) plating the metal precursor film (3) of the copper, indium, gallium on the bottom conductive film by a magnetic control sputtering or a vacuum evaporation;    (C) putting the module to be processed in a reaction container (4), vacuumizing, sending the protective gas which does not react with the copper, indium and gallium, and a selenylation reaction source and/or a sulfidization reaction source in the reaction container;    (D) heating and carrying out plasma discharge on the reaction container, where part of selenium mole and/or sulfur mole in plasma are excited to free or ionogenic; and    (E) carrying out selenylation and/or sulfidization reactions on the metal precursor film.    An INDEPENDENT CLAIM is included for a film coating equipment for preparing CuInGaSeS or CuInGaSe or CuInGaS thin film solar cell absorption layer, comprising a reaction container, a vacuum pump (6), a heating device (8), a plasma generating device (7) for supplying plasma to the reaction container, a rotating shaft (5). The reaction container is further equipped with a protective gas input device (9) and selenylation and/or sulfidization reaction source device (10).    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a film coating equipment for preparing CuInGaSeS or CuInGaSe or CuInGaS thin film solar cell absorption layer.    Substrate (1)    Bottom conductive film (2)    Metal precursor film (3)    Reaction container (4)    Rotating shaft (5)    Vacuum pump (6)    Plasma generating device (7)    Heating device (8)    Protective gas input device (9)    Sulfidization reaction source device (10)