NOVELTY - The method for texturing and electrochemical polishing of a silicon wafer (22), comprises conveying the silicon wafer lying along a conveyor strip (12) and applying and/or spraying an etching solution (21) via nozzles (20) on the top side of the wafer for texturing, rinsing the wafer with water (26), and moistening the wafer with a second etching solution on its lower side for electrochemical polishing. In the first process step, the etching solution is brought to the lower surface the silicon wafer via conveyor roller (13), on which the silicon wafers are conveyed.    USE - Method for texturing and electrochemical polishing of a silicon wafer with etching solution, where the wafer is useful for manufacturing solar cell.    ADVANTAGE - The method provides improved and efficient texturing and uniform electrochemical polishing of a silicon wafer with a smooth and shining backside thus improving the efficiency of the solar cell manufactured with the silicon wafer.    DETAILED DESCRIPTION - The method for texturing and electrochemical polishing of a silicon wafer (22), comprises conveying the silicon wafer lying along a conveyor strip (12) and applying and/or spraying an etching solution (21) via nozzles (20) on the top side of the wafer for texturing, rinsing the wafer with water (26), and moistening the wafer with a second etching solution on its lower side for electrochemical polishing. In the first process step, the etching solution is brought to the lower surface the silicon wafer via conveyor roller (13), on which the silicon wafers are conveyed, where the quantity of etching solution brought to the lower surface is smaller than quantity of etching solution brought to the top side. A material (5 mu m) is applied for the texturing and a material (2 mu m) is applied for the electrochemical polishing. The texturing process takes place at 80-120 seconds, where the silicon wafer is continuously conveyed. The electrochemical polishing process takes place at 200 seconds. The etching solution for texturing is applied by shower pipes running transverse to the conveyor strip. The moistening takes place with the second etching solution via conveyor rollers. The silicon wafers are immersed into a bath with the second etching solution. The first and second etching solutions are a mixture of hydrogen fluoride and nitric acid, where the second etching solution during the electrochemical polishing has high nitric acid-portion. An INDEPENDENT CLAIM is included for a device for treating silicon wafer.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of a device for texturing and electrochemical polishing of silicon wafer.    Conveyor strip (12)    Conveyor roller (13)    Nozzles (20)    Etching solution (21)    Silicon wafer (22)    Water. (26)