CN102176488-B -- CN1417841-A   MARUYAMA J (MARU-Individual);  TAKAYAMA T (TAKA-Individual);  GOTO Y (GOTO-Individual)   MARUYAMA J,  TAKAYAMA T,  GOTO Y;  CN1530725-A   SAMSUNG SDI CO LTD (SMSU)   KIM T,  YOO K;  US5216491-A   FUJI XEROX CO LTD (XERF)   YAMAMOTO S,  HIKICHI T;  WO2004114417-A1   KANEKA CORP (KANF)   SUEZAKI T,  YOSHIMI M,  SASAKI T,  TAWADA Y,  YAMAMOTO K;  US7936037-B2 -- CN1034074-A   ;  CN1098804-A   ;  CN1417841-A   MARUYAMA J (MARU-Individual);  TAKAYAMA T (TAKA-Individual);  GOTO Y (GOTO-Individual)   MARUYAMA J,  TAKAYAMA T,  GOTO Y;  CN1530725-A   SAMSUNG SDI CO LTD (SMSU)   KIM T,  YOO K;  EP324550-A   ;  EP619676-A2   ;  EP861017-A2   NANAO CORP (NANA-Non-standard)   KAWASHIMA H,  NAKASHIMA Y,  NITTA T;  EP964451-A2   CANON KK (CANO)   ITABASHI S;  EP1458030-A2   SAMSUNG SDI CO LTD (SMSU)   KIM T,  YOO K;  EP1523043-A2   SEMICONDUCTOR ENERGY LAB (SEME)   NISHI K,  ADACHI H,  MARUYAMA J,  KUSUMOTO N,  SUGAWARA Y,  AOKI T,  SUGIYAMA E,  TAKAHASHI H;  EP1635402-A1   KANEKA CORP (KANF)   SUEZAKI T,  YOSHIMI M,  SASAKI T,  TAWADA Y,  YAMAMOTO K;  JP2177374-A   ;  JP3171808-A   ;  JP3193315-A   ;  JP3310370-A   ;  JP4321273-A   FUJI XEROX CO LTD (XERF);  JP5218486-A   ;  JP11345994-A   CANON KK (CANO)   ITABASHI S;  JP56080176-A   ;  JP58063179-A   ;  JP2000156522-A   CANON KK (CANO);  JP2000196117-A   SEMICONDUCTOR ENERGY LAB (SEME);  TDK CORP (DENK);  JP2003047017-A   ;  JP2003060744-A   ;  JP2004363279-A   ;  JP2005136394-A   SEMICONDUCTOR ENERGY LAB (SEME)   NISHI K,  ADACHI H,  MARUYAMA J,  KUSUMOTO N,  SUGAWARA Y,  AOKI T,  SUGIYAMA E,  TAKAHASHI H;  US4937129-A   ;  US5017987-A   ;  US5035753-A   ;  US5212395-A   ;  US5216491-A   FUJI XEROX CO LTD (XERF)   YAMAMOTO S,  HIKICHI T;  US5453629-A   CANON KK (CANO);  US5458695-A   SEMICONDUCTOR ENERGY LAB (SEME);  US5525813-A   FUJI XEROX CO LTD (XERF);  US5572255-A   ;  US5670817-A   SANTA BARBARA RES CENTER (SANT-Non-standard)   ROBINSON D A;  US5821597-A   TDK CORP (DENK);  SEMICONDUCTOR ENERGY LAB (SEME)   SHINOHARA H,  ABE M,  NAKAJIMA S,  ARAI Y;  US6188380-B1   NANAO CORP (NANA-Non-standard)   KAWASHIMA H,  NAKASHIMA Y,  NITTA T;  US6353228-B1   CANON KK (CANO)   ITABASHI S;  US6495380-B2   ;  US6693337-B2   FUJITSU CANTAM DEVICE KK (FUJI-Non-standard)   YONEDA Y,  HANAWA I;  US6720576-B1   TDK CORP (DENK);  SEMICONDUCTOR ENERGY LAB (SEME)   SHINOHARA H,  ABE M,  NAKAJIMA S,  ARAI Y;  US7095090-B2   TDK CORP (DENK);  SEMICONDUCTOR ENERGY LAB (SEME)   SHINOHARA H,  ABE M,  NAKAJIMA S,  ARAI Y;  US7335951-B2   SEMICONDUCTOR ENERGY LAB (SEME)   NISHI K,  ADACHI H,  MARUYAMA J,  KUSUMOTO N,  SUGAWARA Y,  AOKI T,  SUGIYAMA E,  TAKAHASHI H;  US2003082889-A1   MARUYAMA J (MARU-Individual);  TAKAYAMA T (TAKA-Individual);  GOTO Y (GOTO-Individual)   MARUYAMA J,  TAKAYAMA T,  GOTO Y;  US2004085598-A1   KONICA CORP (KONS)   KOKEGUCHI N,  OHTANI H;  US2004183072-A1   SAMSUNG SDI CO LTD (SMSU)   KIM T,  YOO K;  US2006097259-A1   KANEKA CORP (KANF)   SUEZAKI T,  YOSHIMI M,  SASAKI T,  TAWADA Y,  YAMAMOTO K;  US2008108205-A1   SEMICONDUCTOR ENERGY LAB (SEME)   NISHI K,  ADACHI H,  MARUYAMA J,  KUSUMOTO N,  SUGAWARA Y,  AOKI T,  SUGIYAMA E,  TAKAHASHI H;  WO2004027879-A2   QUANTUM SEMICONDUCTOR LLC (QUAN-Non-standard)   AUGUSTO C J R P;  WO2004114417-A1   KANEKA CORP (KANF)   SUEZAKI T,  YOSHIMI M,  SASAKI T,  TAWADA Y,  YAMAMOTO K