NOVELTY - A semiconductor structure (110) comprises: a bonding substrate (113); a group III element nitride semiconductor layer (112) bonded to the bonding substrate through a bonding interface (121), where the semiconductor layer has a metal polar surface (107) proximate to the bonding substrate; and a device layer structure having an indium gallium nitride layer with a metal polar surface positioned adjacent to a nitrogen polar surface of the semiconductor layer.    USE - As semiconductor structure (claimed) including optical devices such as photodetectors, solar cells, lasers and light emitting diodes, as well as non-optical devices, such as transistors. Indium gallium nitride alloys are useful in an array of device structures, including, electronic, optoelectronic, photovoltaic and microelectromechanical systems.    ADVANTAGE - The group III element nitride semiconductor layer can be re-grown after it, or a portion of it, is transferred from growth substrate to bonding substrate as seed layer. In this way, the semiconductor layer is replenished, which reduces costs because more pseudo-substrates can be formed in fewer steps and less time. By re-growing the semiconductor layer, the steps for fabricating the device layer structure can be repeated many more times.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabricating a device layer structure, involving: providing a group III-nitride semiconductor layer carried by a growth substrate, where the semiconductor layer has a nitrogen polar surface proximate to the growth substrate; bonding the semiconductor layer to a first bonding substrate, where the semiconductor layer has a metal polar surface proximate to the first bonding substrate; removing the growth substrate so the semiconductor layer is carried by the first bonding substrate; and forming a device layer structure on the semiconductor layer, where the device layer structure includes an indium gallium nitride layer having a metal polar surface proximate to the nitrogen polar surface of the semiconductor layer.    DESCRIPTION OF DRAWING(S) - The figure shows a side view of steps for fabricating a device layer structure.    Semiconductor structure (110)    Group III element Nitride semiconductor layer (112)    Bonding substrate (113)    Seed layer (114)    Growth interface (120)    Bonding interface (121)