NOVELTY - The method comprises forming a first dielectric layer on a substrate (10), depositing a second dielectric layer containing boron or phosphorus on the first dielectric layer using a plasma enhanced chemical vapor deposition, depositing an undoped oxide-containing cap on the second dielectric layer, and annealing the resulting structure. The oxide-containing cap has a thickness of 250 Angstrom . The dielectric layer is a borophosphosilicate glass layer. The oxide-containing cap is a silicon oxide (SiOx) layer. The oxide-containing cap (100-200 Angstrom ) is doped during the annealing process.    USE - The method is useful for manufacturing a dielectric component for an electronic device such as optoelectronic devices, solar cells and micro electrical mechanical system structures.    ADVANTAGE - The method prevents out-diffusion and/or out-gassing of the dopant during storage and high-temperature annealing process and moisture penetration into the dielectric layer using the cap layer, and reduces defect nucleation on the dielectric layer surface and defect formation during high temperature annealing while allowing uniform flowability of the dielectric layer thus economically and easily providing the dielectric component with desired properties.    DETAILED DESCRIPTION - The method comprises forming a first dielectric layer on a substrate (10), depositing a second dielectric layer containing boron or phosphorus on the first dielectric layer using a plasma enhanced chemical vapor deposition, depositing an undoped oxide-containing cap on the second dielectric layer, and annealing the resulting structure. The oxide-containing cap has a thickness of 250 Angstrom . The dielectric layer is a borophosphosilicate glass layer. The oxide-containing cap is a silicon oxide (SiOx) layer. The oxide-containing cap (100-200 Angstrom ) is doped during the annealing process. The oxide-containing cap reduces out-gassing and out-diffusion of the boron and phosphorus dopants from the dielectric layer during the annealing process. An INDEPENDENT CLAIM is included for a dielectric component of an electronic device.    DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of a semiconductor device.    Substrate (10)    First layer (20)    Section of the first layer (22)    Doped oxide layer (30)    Cap layer. (40)