TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first vapor phase reactant comprises Sb, i.e. antimony trichloride; Ge, i.e. germanium bromide or germanium chloride-butyric acid; bismuth (Bi), i.e. Bi compound of formula BiX'3, particularly bismuth trichloride; zinc (Zn), i.e. Zn compound of formula ZnX'2, particularly zinc chloride; or copper (Cu), i.e. Cu-Se or copper chloride. The second vapor phase reactant comprises Te. The deposited film comprises Sb-Te, Ge-Te, Ge-Sb-Te, Bi-Te, Bi-Se and/or Zn-Te, particularly Ge-Sb-Te, optionally doped with oxygen, nitrogen, silicon, sulfur, indium (In), silver, tin, gold, arsenic, Bi, Zn, Se, Te, Ge, Sb and/or manganese. The material comprising Se or Te is elemental Se or Te.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The Group IA metal is lithium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The method further comprises Ge-Te deposition cycles comprising providing first vapor phase reactant pulse comprising Ge precursor into reaction chamber to form single molecular layer of Ge precursor on substrate; removing excess first reactant from reaction chamber; and providing second vapor phase reactant pulse comprising Te precursor to reaction chamber such that the Te precursor reacts with Ge precursor on substrate; or In-Se deposition cycles comprising providing first vapor phase reactant pulse comprising In precursor of formula InX'3 into reaction chamber to form single molecular layer of In precursor on substrate; removing excess first reactant from reaction chamber; and providing second vapor phase reactant pulse comprising Se precursor to reaction chamber such that the Se precursor reacts with In precursor on substrate. The Ge-Te deposition cycles, Sb-Te deposition cycles and Cu-Se deposition cycles are performed at 1:1 ratio. The deposition temperature is less than 80 degrees C. The formation of first product includes using tetrahydrofuran as solvent and naphthalene as catalyst. Preferred Components: The Te or Se in Te or Se reactant is not bound to hydrogen atom, and has oxidation state of - 2. The Te reactant is triethyl silicon telluride or trimethyl silicon telluride. The Se reactant is triethyl silicon selenide or trimethyl silicon selenide. The second vapor phase reactant is triethyl silicon selenide. The Ge precursor is of formula GeX2. The second precursor is not Te(SiR1R2R3)2 or Se(SiR1R2R3)2, but is of formula R'1R'2R'3Si-Si-A-Si-SiR'4R'5R'6, R'1R'2N-Si-A-Si-NR'3R'4 or R'1-O-Si-A-Si-O-R'2. The second precursor comprises silicon atom with double bond to R group; or ring or cyclical configuration comprising more than 1 Te atoms or more than 1 Se atoms and Si atoms. The second reactant is of formula R1R2R3SiX, (R'1R'2R'3)-SiX, (R'1R'2N)3-Si-X, (R'1-O)3-Si-X, R'1R'2SiX with double bond between silicon and one of R groups, X2-Si-R'1R'2 or X-Si-R'-Si-X. The second reactant comprises triethyl silicon chloride and triethyl silicon telluride; dimethylbutyl silicon chloride and dimethylbutyl silicon telluride; or trimethyl silicon chloride and trimethyl silicon telluride.X=halo or GeCl2-C4H8O2;A=Te or Se;andR'1-R'6, R'=alkyl, H, alkenyl, alkynyl or aryl. EXAMPLE - An antimony-tellurium (Sb-Te) thin films were formed using alternating and sequential pulses of antimony trichloride (SbCl3) and tert-butyl dimethyl silicon telluride. Pulse and purge lengths were 1 and 2 seconds for SbCl3 and 1 and 4 seconds for tert-butyl dimethyl silicon telluride. The Sb-Te thin films were grown at 100 degrees C on silicon surface, soda lime glass and rhodium. The Sb-Te thin films were deposited to thickness of 9-12 nm. The morphology of each film was compared using field emission scanning electron microscope (FESEM) images. In the FESEM images, there were visible isolated islands on film formed on silicon substrate. The films grown on soda lime glass and rhodium were continuous.