TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Film: The film has a resistivity, rho , of less than or equal to 4x 10-3 (preferably less than or equal to 8x 10-4) Omega cm; has a mean optical transparency in the visible range of the spectrum of greater than or equal to 75%; has a two- or three- dimensionally patterned structure; and comprises at least two different layers. Preferred Process: The process (P1) involves providing a target material in a chamber comprising the elements Zn, O, M'and optionally X; providing a substrate in the chamber; focusing a pulsed laser beam on the target material to generate a plasma; and depositing the plasma on the substrate to form the film. The target material is produced by heating a mixture of zinc oxide and an oxide of M'to 600-1000 degrees C or to less than or equal to 200 degrees C; performing a solvent removal step; and heating the resulting solid to less than or equal to 500 degrees C to produce the target material. The process (P1) further involves providing at least one further target material in the chamber, which is different from the target material which comprises Zn, O, M'and optionally X; growing a multilayer film on the substrate by alternatively using the different target materials; and forming a two- or three-dimensionally patterned structure on the substrate. The plasma is deposited on only a portion of the surface of the substrate, in order to form a patterned film. The process further involves subjecting the film to etching, for producing a patterned film. Preferred Reactants: The zinc compound is zinc citrate and the compound comprising M'is silicon tetra-acetate. Preferred Definitions:    M'=dopant element other than Ga (preferably Si);    x=0.01-0.05;    X=F;    y=0.    EXAMPLE - Silicon doped ZnO (SZO) targets were prepared from zinc oxide (purity, 99.99%) and silicon oxide (SiO2) (purity 99.99%) (3 wt.%) powders. The powders were mixed in acetone and then fired at 800 degrees C for 12 hours in air, ground, and fired again at 800 degrees C for a further 7 hours in air. The solubility limit of SiO2 in ZnO and the phase purity of SiO2-ZnO were determined by X-ray powder diffraction. Disk-shaped targets, 25 mm in diameter and 2 mm thick were prepared from the sintered powders, and then sintered at 800 degrees C for 7 hours in air to lend mechanical strength to the target. Borosilicate glass substrates were cleaned in an ultrasonic cleaner for 15 minutes with acetone, ethanol and then dried with filtered air before being introduced into the deposition system. Ablation was performed with the laser operating at a repetition frequency of 10 Hz, and energy of 250-400 mJ per pulse for a duration of 5000 pulses. The crystalline structure of thin film was studied by X-ray diffractometer. The thickness of the film was 258 nm. The film resistivity was 5.9x 10-4 Omega cm, conductivity was 1.67x 103 Omega cm, carrier concentration was 3.66x 1020 cm-3, and Hall mobility was 1.85x 101. The film had 84.6% transparency.