;  US8231942-B2 -- EP1496041-A1   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  EP1695952-A1   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  INOUE T,  KONDO H;  EP2031036-A1   SEMICONDUCTOR ENERGY LAB (SEME)   SEO S,  USHIKUBO T;  EP2051310-A1   SEMICONDUCTOR ENERGY LAB (SEME)   SATOSHI S,  TAKAHIRO U;  EP681019-A2   TDK CORP (DENK)   INOUE T,  NAKAYA K;  EP786926-A2   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  ENOKIDA T;  JP01204991-A   ;  JP06330035-A   ;  JP08012600-A   ;  JP11193378-A   NEC KANSAI LTD (KANN)   MANO Y;  JP61296085-A   TOSHIBA KK (TOKE)   TAKAHARA T,  OIKAWA M;  JP2003031371-A   MITSUBISHI CHEM CORP (MITU)   SATO H,  SATO Y,  ICHINOSAWA A;  JP2003146951-A   MITSUBISHI CHEM CORP (MITU)   ICHINOSAWA A,  SATO Y,  OGATA T;  JP2003229273-A   MITSUI CHEM INC (MITA)   TOTANI Y,  ISHIDA T,  SHIMAMURA T,  TANABE Y,  NAKATSUKA M;  JP2004095850-A   MITSUBISHI CHEM CORP (MITU)   TSURUTANI Y,  TAKEUCHI M,  ICHINOSAWA A,  ARAMAKI S;  JP2006041103-A   TOYO INK MFG CO LTD (TOXW)   TAKADA Y;  JP2007015933-A   SONY CORP (SONY)   UEDA K,  YOSHINAGA S,  MIYABAYASHI Y;  JP2009076450-A   SEMICONDUCTOR ENERGY LAB (SEME)   SEO S,  USHIKUBO T;  JP2009099966-A   SEMICONDUCTOR ENERGY LAB (SEME)   USHIKUBO T;  US5635308-A   TDK CORP (DENK)   INOUE T,  NAKAYA K;  US5811834-A   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  ENOKIDA T;  US6143201-A   NEC KANSAI LTD (KANN)   MANO Y;  US20040146746-A1   ;  US20040161632-A1   ;  US20050095455-A1   ;  US20050116633-A1   ;  US20050214565-A1   ;  US20050244670-A1   ;  US20060068221-A1   ;  US20060292394-A1   ;  US20070049778-A1   ;  US20070059556-A1   ;  US20070075632-A1   ;  US20070152572-A1   ;  US20070205412-A1   ;  US20080001123-A1   ;  US20080017853-A1   ;  US20080107918-A1   ;  US20080114178-A1   ;  US20080268284-A1   ;  US20080286445-A1   ;  US20090004506-A1   ;  US20090058278-A1   ;  US20090085479-A1   ;  US20090102366-A1   ;  US20090146139-A1   ;  US20090174321-A1   ;  US20090247795-A1   ;  US20090253916-A1   ;  US20090267497-A1   ;  US20090267498-A1   ;  US6815094-B2   SAMSUNG DENKAN KK (SMSU)   LEE J H,  LEE S H,  SON J M;  US7674914-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S,  OSAKA H,  SUZUKI T,  NOMURA R;  US7723722-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SUZUKI H;  US7732064-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  NAKASHIMA H,  KOJIMA K,  NOMURA R,  OHSAWA N;  US7842945-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  NAKASHIMA H,  KAWAKAMI S,  SUZUKI T,  NOMURA R;  US7879464-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  NAKASHIMA H,  KOJIMA K,  NOMURA R,  OHSAWA N;  US7880019-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  OSAKA H,  KAWAKAMI S,  SHITAGAKI S;  US8039122-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  WO2004020388-A1   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  WO2004020548-A1   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SUZUKI K,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  WO2006070712-A1   IDEMITSU KOSAN CO LTD (IDEK)   INOUE T,  KONDO H,  IKEDA H;  WO2007102683-A1   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  WO2007110129-A1   MERCK PATENT GMBH (MERE)   STOESSEL P,  HEIL H,  PARHAM A,  VESTWEBER H;  WO2004075603-A2   LG DISPLAY CO LTD (GLDS)   SEO J D,  KIM H J,  LEE K H,  OH H Y,  KIM M S,  PARK C G;  WO2004075604-A2   LG ELECTRONICS INC (GLDS)   SEO J D,  KIM H J,  LEE K H,  OH H Y,  KIM M S,  PARK C G;  US8518492-B2 -- EP1496041-A1   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  EP1695952-A1   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  INOUE T,  KONDO H;  EP1748045-A1   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  EP2031036-A1   SEMICONDUCTOR ENERGY LAB (SEME)   SEO S,  USHIKUBO T;  EP2051310-A1   SEMICONDUCTOR ENERGY LAB (SEME)   SATOSHI S,  TAKAHIRO U;  EP2316905-A1   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  EP2364964-A1   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  EP2450356-A1   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  EP2479814-A1   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  EP681019-A2   TDK CORP (DENK)   INOUE T,  NAKAYA K;  EP786926-A2   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  ENOKIDA T;  EP2107096-A2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  EP2316906-A2   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  JP01204991-A   ;  JP06330035-A   ;  JP08012600-A   ;  JP11193378-A   NEC KANSAI LTD (KANN)   MANO Y;  JP61296085-A   TOSHIBA KK (TOKE)   TAKAHARA T,  OIKAWA M;  JP2003031371-A   MITSUBISHI CHEM CORP (MITU)   SATO H,  SATO Y,  ICHINOSAWA A;  JP2003146951-A   MITSUBISHI CHEM CORP (MITU)   ICHINOSAWA A,  SATO Y,  OGATA T;  JP2003229273-A   MITSUI CHEM INC (MITA)   TOTANI Y,  ISHIDA T,  SHIMAMURA T,  TANABE Y,  NAKATSUKA M;  JP2003306454-A   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  JP2004083513-A   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  JP2004095850-A   MITSUBISHI CHEM CORP (MITU)   TSURUTANI Y,  TAKEUCHI M,  ICHINOSAWA A,  ARAMAKI S;  JP2006041103-A   TOYO INK MFG CO LTD (TOXW)   TAKADA Y;  JP2007015933-A   SONY CORP (SONY)   UEDA K,  YOSHINAGA S,  MIYABAYASHI Y;  JP2007039431-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  JP2007063501-A   TORAY IND INC (TORA)   NAGAO K,  MURASE S,  SUGIMOTO K;  JP2007131722-A   TORAY IND INC (TORA)   OGAWA T,  MURASE S,  NAGAO K;  JP2008081497-A   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S;  JP2008195841-A   TORAY IND INC (TORA)   SUENAGA M,  SUGIMOTO K,  MURASE S;  JP2009076450-A   SEMICONDUCTOR ENERGY LAB (SEME)   SEO S,  USHIKUBO T;  JP2009099966-A   SEMICONDUCTOR ENERGY LAB (SEME)   USHIKUBO T;  JP2009167175-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  OSAKA H,  SEO S;  JP2009209127-A   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  TOBA Y,  ORYU Y,  HAYAKAWA J;  JP2009280576-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  JP2009298770-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  JP2009508352-W   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  JP2009529035-W   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  US5635308-A   TDK CORP (DENK)   INOUE T,  NAKAYA K;  US5811834-A   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  ENOKIDA T;  US6143201-A   NEC KANSAI LTD (KANN)   MANO Y;  US20040146746-A1   ;  US20040161632-A1   ;  US20050095455-A1   ;  US20050116633-A1   ;  US20050214565-A1   ;  US20050244670-A1   ;  US20060068221-A1   ;  US20060292394-A1   ;  US20070049778-A1   ;  US20070059556-A1   ;  US20070075632-A1   ;  US20070152572-A1   ;  US20070205412-A1   ;  US20080001123-A1   ;  US20080017853-A1   ;  US20080107918-A1   ;  US20080114178-A1   ;  US20080268284-A1   ;  US20080286445-A1   ;  US20090004506-A1   ;  US20090058278-A1   ;  US20090085479-A1   ;  US20090102366-A1   ;  US20090146139-A1   ;  US20090174321-A1   ;  US20090247795-A1   ;  US20090253916-A1   ;  US20090267497-A1   ;  US20090267498-A1   ;  US20110049482-A1   ;  US20120138907-A1   ;  US20130005067-A1   ;  US6815094-B2   SAMSUNG DENKAN KK (SMSU)   LEE J H,  LEE S H,  SON J M;  US7387845-B2   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  US7674914-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S,  OSAKA H,  SUZUKI T,  NOMURA R;  US7723722-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SUZUKI H;  US7732064-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  NAKASHIMA H,  KOJIMA K,  NOMURA R,  OHSAWA N;  US7790892-B2   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  US7842945-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  NAKASHIMA H,  KAWAKAMI S,  SUZUKI T,  NOMURA R;  US7879464-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  NAKASHIMA H,  KOJIMA K,  NOMURA R,  OHSAWA N;  US7880019-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  OSAKA H,  KAWAKAMI S,  SHITAGAKI S;  US7965032-B2   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  US8039122-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  US8084146-B2   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  US8183793-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S;  US8298683-B2   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  US8298687-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  WO2004020388-A1   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  WO2004020548-A1   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SUZUKI K,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  WO2005113531-A1   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  WO2006070712-A1   IDEMITSU KOSAN CO LTD (IDEK)   INOUE T,  KONDO H,  IKEDA H;  WO2006104221-A1   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  WO2007061181-A1   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  WO2007102683-A1   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  WO2007110129-A1   MERCK PATENT GMBH (MERE)   STOESSEL P,  HEIL H,  PARHAM A,  VESTWEBER H;  WO2008026614-A1   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S;  WO2009081800-A1   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  OSAKA H,  SEO S;  WO2009131199-A1   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  WO2004075603-A2   LG DISPLAY CO LTD (GLDS)   SEO J D,  KIM H J,  LEE K H,  OH H Y,  KIM M S,  PARK C G;  WO2004075604-A2   LG ELECTRONICS INC (GLDS)   SEO J D,  KIM H J,  LEE K H,  OH H Y,  KIM M S,  PARK C G;  JP5501656-B2 -- JP96012600-A   ;  JP2003146951-A   MITSUBISHI CHEM CORP (MITU)   ICHINOSAWA A,  SATO Y,  OGATA T;  JP2003306454-A   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  JP2004083513-A   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  JP2007039431-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  JP2007063501-A   TORAY IND INC (TORA)   NAGAO K,  MURASE S,  SUGIMOTO K;  JP2007131722-A   TORAY IND INC (TORA)   OGAWA T,  MURASE S,  NAGAO K;  JP2008081497-A   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S;  JP2008195841-A   TORAY IND INC (TORA)   SUENAGA M,  SUGIMOTO K,  MURASE S;  JP2009167175-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  OSAKA H,  SEO S;  JP2009209127-A   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  TOBA Y,  ORYU Y,  HAYAKAWA J;  JP2009280576-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  JP2009298770-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  JP2009508352-A   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  JP2009529035-A   ;  WO2005113531-A1   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  US8845926-B2 -- EP1496041-A1   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  EP1695952-A1   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  INOUE T,  KONDO H;  EP1748045-A1   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  EP2031036-A1   SEMICONDUCTOR ENERGY LAB (SEME)   SEO S,  USHIKUBO T;  EP2051310-A1   SEMICONDUCTOR ENERGY LAB (SEME)   SATOSHI S,  TAKAHIRO U;  EP2316905-A1   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  EP2364964-A1   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  EP2450356-A1   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  EP2479814-A1   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  EP681019-A2   TDK CORP (DENK)   INOUE T,  NAKAYA K;  EP786926-A2   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  ENOKIDA T;  EP2107096-A2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  EP2316906-A2   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  JP01204991-A   ;  JP06330035-A   ;  JP08012600-A   ;  JP11193378-A   NEC KANSAI LTD (KANN)   MANO Y;  JP61296085-A   TOSHIBA KK (TOKE)   TAKAHARA T,  OIKAWA M;  JP2003031371-A   MITSUBISHI CHEM CORP (MITU)   SATO H,  SATO Y,  ICHINOSAWA A;  JP2003146951-A   MITSUBISHI CHEM CORP (MITU)   ICHINOSAWA A,  SATO Y,  OGATA T;  JP2003229273-A   MITSUI CHEM INC (MITA)   TOTANI Y,  ISHIDA T,  SHIMAMURA T,  TANABE Y,  NAKATSUKA M;  JP2003306454-A   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  JP2004083513-A   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  JP2004095850-A   MITSUBISHI CHEM CORP (MITU)   TSURUTANI Y,  TAKEUCHI M,  ICHINOSAWA A,  ARAMAKI S;  JP2006041103-A   TOYO INK MFG CO LTD (TOXW)   TAKADA Y;  JP2007015933-A   SONY CORP (SONY)   UEDA K,  YOSHINAGA S,  MIYABAYASHI Y;  JP2007039431-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  JP2007063501-A   TORAY IND INC (TORA)   NAGAO K,  MURASE S,  SUGIMOTO K;  JP2007131722-A   TORAY IND INC (TORA)   OGAWA T,  MURASE S,  NAGAO K;  JP2008081497-A   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S;  JP2008195841-A   TORAY IND INC (TORA)   SUENAGA M,  SUGIMOTO K,  MURASE S;  JP2009076450-A   SEMICONDUCTOR ENERGY LAB (SEME)   SEO S,  USHIKUBO T;  JP2009099966-A   SEMICONDUCTOR ENERGY LAB (SEME)   USHIKUBO T;  JP2009167175-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  OSAKA H,  SEO S;  JP2009209127-A   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  TOBA Y,  ORYU Y,  HAYAKAWA J;  JP2009280576-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  JP2009298770-A   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  JP2009508352-W   KIM K K (KIMK-Individual);  HONG S K (HONG-Individual);  JANG H Y (JANG-Individual);  JEONG D S (JEON-Individual)   KIM K K,  HONG S K,  JANG H Y,  JEONG D S;  JP2009529035-W   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  US5635308-A   TDK CORP (DENK)   INOUE T,  NAKAYA K;  US5811834-A   TOYO INK MFG CO LTD (TOXW)   TAMANO M,  ENOKIDA T;  US6143201-A   NEC KANSAI LTD (KANN)   MANO Y;  US20040146746-A1   ;  US20040161632-A1   ;  US20050095455-A1   ;  US20050116633-A1   ;  US20050214565-A1   ;  US20050244670-A1   ;  US20060068221-A1   ;  US20060292394-A1   ;  US20070049778-A1   ;  US20070059556-A1   ;  US20070075632-A1   ;  US20070152572-A1   ;  US20070205412-A1   ;  US20080001123-A1   ;  US20080017853-A1   ;  US20080107918-A1   ;  US20080114178-A1   ;  US20080268284-A1   ;  US20080286445-A1   ;  US20090004506-A1   ;  US20090058278-A1   ;  US20090085479-A1   ;  US20090102366-A1   ;  US20090146139-A1   ;  US20090174321-A1   ;  US20090247795-A1   ;  US20090253916-A1   ;  US20090267497-A1   ;  US20090267498-A1   ;  US20110049482-A1   ;  US20120138907-A1   ;  US20130005067-A1   ;  US6815094-B2   SAMSUNG DENKAN KK (SMSU)   LEE J H,  LEE S H,  SON J M;  US7387845-B2   CANON KK (CANO)   SAITO A,  HIRAOKA M,  SENOO A,  TANABE H,  YAMADA N,  NEGISHI C;  US7674914-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S,  OSAKA H,  SUZUKI T,  NOMURA R;  US7723722-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SUZUKI H;  US7732064-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  NAKASHIMA H,  KOJIMA K,  NOMURA R,  OHSAWA N;  US7790892-B2   IDEMITSU KOSAN CO LTD (IDEK)   IKEDA H,  MATSUURA M,  FUNAHASHI M,  HOSOKAWA C;  US7842945-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  NAKASHIMA H,  KAWAKAMI S,  SUZUKI T,  NOMURA R;  US7879464-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  NAKASHIMA H,  KOJIMA K,  NOMURA R,  OHSAWA N;  US7880019-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  OSAKA H,  KAWAKAMI S,  SHITAGAKI S;  US7965032-B2   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  US8039122-B2   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  NAKASHIMA H,  KOJIMA K,  SEO S,  EGAWA M,  NOMURA R;  US8084146-B2   TORAY IND INC (TORA)   MURASE S,  KITAZAWA D,  NAGAO K,  SUGIMOTO K,  TOMINAGA T;  US8183793-B2   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S; 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 WO2007102683-A1   BAE J (BAEJ-Individual);  LEE D (LEED-Individual);  JANG J (JANG-Individual);  JEON S (JEON-Individual);  KIM J (KIMJ-Individual)   BAE J,  LEE D,  JANG J,  JEON S,  KIM J;  WO2007110129-A1   MERCK PATENT GMBH (MERE)   STOESSEL P,  HEIL H,  PARHAM A,  VESTWEBER H;  WO2008026614-A1   SEMICONDUCTOR ENERGY LAB (SEME)   EGAWA M,  KAWAKAMI S;  WO2009081800-A1   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  OSAKA H,  SEO S;  WO2009131199-A1   SEMICONDUCTOR ENERGY LAB (SEME)   KAWAKAMI S,  OHSAWA N,  SEO S,  SHITAGAKI S,  SUZUKI T;  WO2004075603-A2   LG DISPLAY CO LTD (GLDS)   SEO J D,  KIM H J,  LEE K H,  OH H Y,  KIM M S,  PARK C G;  WO2004075604-A2   LG ELECTRONICS INC (GLDS)   SEO J D,  KIM H J,  LEE K H,  OH H Y,  KIM M S,  PARK C G