NOVELTY - The process comprises cooling a substrate to below a temperature, applying a cyclosilane material in a liquid state to the cooled substrate, such that the liquid cyclosilane material is converted into a solid state, melting the solid cyclosilane material and causing polymerization of the melted cyclosilane material to form the crystalline silicon film having a thickness. The thickness is less than 1 mu m. The substrate is provided with a raised barrier structure enclosing a reservoir region for retaining the liquid cyclosilane. The raised barrier structure is formed by electroplating.    USE - The process is useful for forming a crystalline, nanocrystalline or amorphous polysilicon film, which is useful in the manufacture of photovoltaic cells.    ADVANTAGE - The process ensures simple and cost effective formation of polysilicon film with good carrier lifetimes and quality, and improved light absorption efficiencies and energy conversion efficiencies.    DETAILED DESCRIPTION - The process comprises cooling a substrate to below a temperature, applying a cyclosilane material in a liquid state to the cooled substrate, such that the liquid cyclosilane material is converted into a solid state, melting the solid cyclosilane material and causing polymerization of the melted cyclosilane material to form the crystalline silicon film having a thickness. The thickness is less than 1 mu m. The substrate is provided with a raised barrier structure enclosing a reservoir region for retaining the liquid cyclosilane. The raised barrier structure is formed by electroplating. The process further comprises repeating the application of cyclosilane material to the crystalline film, melting the solid cyclosilane material, causing polymerization of the melted cyclosilane material such that a total thickness of the crystalline film is greater than 1 mu m, controlling process parameter comprising a rate of application of the liquid and the temperature, in order to determine the thickness, forming an oxide on the raised barrier structure by anodization, and imparting a texture to the raised barrier structure to offer a nucleation site to the crystalline film. The process is performed in a series of in-line processing chambers. The liquid cyclosilane is applied by immersing the substrate within a bath of the liquid cyclosilane. The substrate is provided with an overlying doped silicon layer, and the barriers are self-aligned and provide a metallized contact to the doped silicon layer. The cyclosilane material is applied by a device employed for another purpose in the printing industry. The device comprises a box coater, a roller coater, a curtain coater, a spray coater, a gravure coater, a roto-gravure coater, or a screen printer. The process comprises attaching a retaining ring having a height to a surface of a substrate, applying a liquid cyclosilane material to a region within the retaining ring, causing polymerization of the cyclosilane material to form the crystalline silicon film within the ring and having a thickness equal to or less than the height, etching into a substrate, a cavity having a depth, and applying a liquid cyclosilane material to the cavity. An INDEPENDENT CLAIM is included for an apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a simplified view of a process for forming the crystalline polysilicon film.