NOVELTY - Depositing silicon on a surface of a substrate, involves providing substrate comprising metallurgical grade silicon on which silicon is to be deposited; purifying surface of the substrate; providing source of gas, which is halide-containing gas; providing reaction vessel comprising silicon containing reaction bed in between the substrate and the sources of gas; and directing gas from the sources into the silicon containing reaction bed to release silicon in a form of halogenated silane, toward the substrate for deposition.    USE - For depositing silicon on a surface of a substrate (claimed) used for preparing photovoltaic cells e.g. solar cells; in silicon chips e.g. in the production of integrated circuits, and/or as components in flat panel displays.    ADVANTAGE - The purification process results in a reduction in a concentration of impurities such that the surface of the substrate is 98.5-99.999% pure. The process produces silicon films that may be used directly in the manufacture of efficient solar cells that are less expensive than the high-grade crystalline silicon wafers that are currently used. The installing of solar cell system containing solar cells prepared using the method is more cost effective than making an electrical grid connection to a remote location.    DETAILED DESCRIPTION - A method for depositing silicon on a surface of a substrate, involves providing substrate comprising a metallurgical grade silicon on which silicon is to be deposited; purifying surface of the substrate; providing source of gas, which is a halide-containing gas; providing reaction vessel comprising silicon containing reaction bed in between the substrate and the sources of gas; and directing gas from the sources into the silicon containing reaction bed at a temperature effective to release silicon in a form of a halogenated silane from the silicon containing reaction bed toward the substrate for deposition. The method further involves exposing the substrate to dopant.    DESCRIPTION OF DRAWING(S) - The figure shows method for depositing silicon on a substrate.