NOVELTY - Preparing n-type zinc-oxide-based thin film semiconductor involves depositing thin film material on surface area of substrate (20), where deposition is by atomic layer deposition process (ALD) carried out at/above atmospheric pressure, where substrate temperature during deposition is under 300 degrees C and ALD includes simultaneously directing series of gas flows along elongated parallel channels having first reactive gaseous material having zinc-containing compound having molar flow, inert purge gas and second reactive gaseous material through output openings; and transporting substrate.    USE - For the preparation of an n-type zinc-oxide-based thin film semiconductor that serves as a channel layer of a thin film transistor, as at least one conductive electrode of a thin film transistor, and as an electrical conduit in an electronic circuit; and in electronic device integrated circuit, active-matrix display, solar cell, active-matrix imager, sensor, an rf price, identification, or inventory label (claimed).    ADVANTAGE - The crystallinity of the zinc-oxide-based thin film semiconductor is less than 85% as measured by x-ray diffraction; and the resistivity of the zinc-oxide-based thin film semiconductor is reduced relative to the resistivity of a similar film not containing indium. The presence of incorporated indium dopant derived from the indium-containing compound as a precursor provides a decrease in resistivity by a factor of at least 10 in the thin film material. The method is cost-effective process for producing indium-doped zinc oxide-based films. The incorporation of indium in zinc oxide-based film, provides the benefit of decreased coating crystallinity and increased conductivity. The method provides a doping method that permits zinc oxide-based semiconductor materials produced in spatially dependent atomic layer deposition (ALD) system to effectively work in practice and perform more robustly. The method provides an improved process for atomic layer deposition of indium doped zinc-oxide-based thin film onto a substrate, well suited to a number of different types of substrates and deposition environments; is adaptable for deposition on a web or other moving substrate, including deposition onto a large area substrate. The method allows operation under atmospheric pressure conditions. The method can be employed in low temperature processes at atmospheric pressures; and can be practiced in an unsealed environment, open to ambient atmosphere. The semiconductor films prepared by the method are capable of exhibiting, in the film form, excellent field-effect electron mobilities of greater than 0.1 cm2/Vs and on-off ratios of greater than 104 and due to this performance properties, the films can be used in a variety of relevant technologies, including active matrix display backplanes.    DETAILED DESCRIPTION - Preparation of an n-type zinc-oxide-based thin film semiconductor involves depositing a thin film material on a surface area of a substrate (20), either an entire surface area or a selected portion, where deposition is by an atomic layer deposition (ALD) process that is carried out at or above atmospheric pressure, where the temperature of the substrate during deposition is under 300 degrees C and where the atomic layer deposition process includes simultaneously directing a series of gas flows along elongated parallel channels comprising, in order, at least a first reactive gaseous material containing a zinc-containing compound having a molar flow during deposition, an inert purge gas, and a second reactive gaseous material through output openings spaced apart from the substrate; and transporting the substrate in a direction relative to the output openings, such that any point on the surface area of the substrate experiences a sequence of the first, the second and the third gaseous materials, so that the sequence causes a thin film to be formed by atomic layer deposition on the surface area of the substrate, where a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material such that the indium-containing compound has a molar flow at a level of greater than 20% of the molar flow of the zinc-containing compound. A volatile acceptor dopant precursor is introduced in the second reactive gaseous material, the inert purge gas, or an additional gas flow of a supplemental gaseous material. The series of gas flows are provided by a deposition device (10) comprising, facing the substrate in plan view, a series of elongated output openings, in parallel, positioned over the substrate in close proximity to it, in an output face (36) of the deposition device, spaced within 1 mm from the surface of the substrate subject to deposition. The deposition device further comprises exhaust channels between parallel elongated output openings for the first and the second reactive gaseous materials.    DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional side view of system of gaseous material.    Deposition device (10)    Output channel (12)    Substrate (20)    Partition (22)    Output face (36)