NOVELTY - The method comprises forming an electrochemical cell (115) including a surface (112) of a cathode substrate (110), an anode (106) and an electroplating solution (104) in contact with the surface and the anode, where the electroplating solution includes a suppressor agent, and electroplating copper onto the surface under conditions in which a ratio of a cathode current density at the surface to an anode current density at the anode is 60-100. The cathode comprises a conditioning cathode. The substrate is immersed in the electroplating solution during the formation of the electrochemical cell.    USE - The method is useful for electroplating copper onto a surface of a substrate, where the electroplated copper is useful as electrical interconnects for fabricating integrated circuits, solar cells and flat-panel displays.    ADVANTAGE - The method is capable of rapidly and economically depositing copper on the substrate as a dendrite-free film with a high degree of crystallographic texture in a uniform manner (i.e. high-throwing power) and at a high-deposition rate (6 mu m per minute or more) without compromising the deposited film quality.    DETAILED DESCRIPTION - The method comprises forming an electrochemical cell (115) including a surface (112) of a cathode substrate (110), an anode (106) and an electroplating solution (104) in contact with the surface and the anode, where the electroplating solution includes a suppressor agent, and electroplating copper onto the surface under conditions in which a ratio of a cathode current density at the surface to an anode current density at the anode is 60-100. The cathode comprises a conditioning cathode. The substrate is immersed in the electroplating solution during the formation of the electrochemical cell. Strength and a concentration of the suppressor agent and a surface area of the anode are selected so that the ratio is established during the act of electroplating copper. The anode comprises: an inert anode, where the copper from dissolved copper in the electroplating solution is electroplated onto the surface; or a copper-containing anode, where the copper from the copper-containing anode is electroplated onto the surface. The copper-containing anode comprises: a porous mass of copper particles; a grooved body comprising copper; a porous mass of sintered copper-containing particles; or a mesh comprising copper. The electroplating copper comprises applying a generally constant voltage or a time-varying voltage between the anode and the surface of the substrate. The substrate surface, the anode and the electroplating solution have dissolved copper in a concentration of 50-100 grams per liter. The suppressor agent comprises a surfactant, a chelating agent, a leveler agent, and a wetting agent. The electroplating solution comprises an accelerator agent, which is free of alkali element. The method further comprising linearly oscillating and rotating the substrate in the electroplating solution during the act of electroplating copper, and orienting the surface of the substrate in a downwardly facing direction. The suppressor agent provides a suppression strength of 5.0. A porous anodic film is formed on the anode by generating a current through the electrochemical cell for a time sufficient to pass 1000 coulombs per liter of the electroplating solution through the electroplating solution.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of an electroplating apparatus.    Electroplating solution (104)    Anode (106)    Substrate (110)    Surface (112)    Electrochemical cell. (115)