TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The nanocrystal is a metal nanocrystal or a semiconductor nanocrystal chosen from group II-VI compounds, group III-V compounds, and group IV-VI compounds and/or group IV compounds. The group II-VI compound is chosen from cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, zinc oxide, mercury sulfide, mercury selenide, mercury telluride, cadmium-selenium sulfide, cadmium-selenium telluride, cadmium sulfide telluride, zinc-selenium sulfide, zinc-selenium telluride, zinc sulfide telluride, mercury-selenium sulfide, mercury-selenium telluride, mercury sulfide telluride, cadmium-zinc sulfide, cadmium-zinc selenide, cadmium-zinc telluride, cadmium-mercury sulfide, cadmium-mercury selenide, cadmium-mercury telluride, mercury-zinc sulfide, mercury-zinc selenide, cadmium-zinc-selenium sulfide, cadmium-zinc-selenium telluride, cadmium-zinc sulfide telluride, cadmium-mercury-selenium sulfide, cadmium-mercury-selenium telluride, cadmium-mercury sulfide telluride, mercury-zinc-selenium sulfide, mercury-zinc-selenium sulfide and/or mercury-zinc sulfide telluride. The group III-V compounds are chosen from gallium nitride, gallium phosphite, gallium arsenide, aluminum nitride, aluminum phosphite, aluminum arsenide, aluminum antimonide, indium nitride, indium phosphite, indium arsenide, indium antimonide, gallium nitrophosphite, gallium nitro arsenide, gallium nitroantimonide, gallium phosphoarsenide, gallium phosphoantimonide, aluminum nitrophosphite, aluminum nitroarsenide, aluminum nitroantimonide, aluminum phosphoarsenide, aluminum phosphoantimonide, indium nitrophosphite, indium nitroarsenide, indium nitroantimonide, indium phosphoarsenide, indium phosphoantimonide, gallium-aluminum nitrophosphite, gallium-aluminum nitroarsenide, gallium-aluminum nitroantimonide, gallium-aluminum phosphoarsenide, gallium-aluminum phosphoantimonide, gallium-indium nitrophosphite, gallium-indium nitroarsenide, gallium-indium nitroantimonide, gallium-indium phosphoarsenide, gallium-indium phosphoantimonide, indium-aluminum nitrophosphite, indium-aluminum nitroarsenide, indium-aluminum nitroantimonide, indium-aluminum phosphoarsenide, or indium-aluminum phosphoantimonide. The group IV-VI compounds are chosen from tin sulfide, tin selenide, tin telluride, lead sulfide, lead selenide, lead telluride, tin-selenium sulfide, tin-selenium telluride, tin-sulfide telluride, lead-selenium sulfide, lead-selenium telluride, lead sulfide telluride, tin-lead sulfide, tin-lead selenide, tin-lead telluride, tin-lead sulfide selenide, tin-lead selenide telluride, and tin-lead-sulfide telluride. The group IV compounds are chosen from silicon, germanide, silicon carbon, and silicon germanide. Preferred Components: The metal oxide precursor is chosen from organosiloxane compound, organosilane compound, silsesquioxane compound, titanium oxide, aluminum oxide, vanadium oxide, zinc oxide, tin oxide, tantalum oxide, cerium oxides and chromium oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The metal oxide is an ether-containing compound of formula: A-(R1)k-O-B (1).A=N, NH, S, COO-, PO3H- or PO32-;R1=alkyl group, 2C alkenyl, or 3C cyclic group;B=repeating units chosen from -(MOx)l-, -(MOyR2)m-, and -(MOzR3R4)n-;M=titanium, zinc, silicon, tin, tungsten, tantalum, zirconium, hafnium, aluminum, yttrium, iron, cerium, or chromium;R2-R4=alkyl group, 2C alkenyl, or 3C heterocyclic group and at least one heteroatom is chosen from N, S, O and P;k=1-20;l,m,n=0 or more, where at least one of l, m, or n is more than 0;andx-z=1-3.Preferred Compounds: The nanocrystals are surrounded by hydrophobic surfactant. An additional metal oxide precursor is added during mixing. The solvent is a polar chosen from alkanol, acetone, ethyl acetate, dichloromethane, chloroform, dimethylformamide, tetrahydrofuran, dimethylsulfoxide, pyridine, and alkylamine. The organosiloxane compounds are chosen from bis(triethoxysilyl)ethane, bis(triethoxysilyl)butane, bis(triethoxysilyl)octane, bis(trimethoxysilyl)ethane, bis(trimethoxysilyl)butane, bis(trimethoxysilyl)octane, bis(triethoxysilyl)ethylene, bis(trimethoxysilyl)ethylene, bis(triethoxysilyl)acetylene, bis(trimethoxysilyl)acetylene, 1,3,5-tris(diethoxysila)cyclohexane, and 1,3,5-tris(triethoxysilyl)benzene. The organosilane compounds are chosen from methyltrimethoxysilane, dimethyldimethoxysilane, propyltrimethoxysilane, propyltriethoxysilane, dipropyldimethoxysilane, octyltrimethoxysilane, octyltriethoxysilane, dioctyldimethoxysilane, and hexadecyltriethoxysilane. The silsesquioxane compound is 2,4,6,8-tetramethyl-2,4,6,8-tetra(trimethoxysilylethoxy)cyclotetrasiloxane. The alkanol is chosen from methanol, ethanol, or propanol. EXAMPLE - Ethanol, toluene solution containing cadmium selenide/zinc sulfide/cadmium sulfide zinc sulfide and pyridine were added and precipitated to obtain transparent solution. Then, hexane was added and stirred to obtain reaction mixture. Further, tetraethoxy orthosilane (in mu m) (100), 1,3,5-tris (diethoxy silane) cyclohexane (100), ethanol (100), propyl amine (100), and water (50) were added and reacted at room temperature to obtain nanocrystal silica composite. The nanocrystal-metal oxide composite had excellent stability with respect to mechanical stress and processability.