NOVELTY - The method for manufacturing a solar cell, comprises transferring (304) a photovoltaic material overlying a support region of a substrate, forming (306) an emitter region on the photovoltaic material by a diffusion process within a first side of the material, where the emitter region is characterized by a first impurity types, forming a mask (307) overlaying the emitter region and exposing at a first contact region, forming (305) the first contact region within a vicinity of a second side of the photovoltaic material, and doping (309) the first contact region with a second impurity type.    USE - The method is useful for manufacturing a solar cell.    ADVANTAGE - The method eliminates shortage between the contact region and the emitter region using the passivation region thus increasing the reliability and performance of the solar cell, and is capable of economically manufacturing easy to handle solar cell with reduced size and less weight.    DETAILED DESCRIPTION - The method for manufacturing a solar cell, comprises transferring (304) a photovoltaic material overlying a support region of a substrate, forming (306) an emitter region on the photovoltaic material by a diffusion process within a first side of the material, where the emitter region is characterized by a first impurity types, forming a mask (307) overlaying the emitter region and exposing at a first contact region, forming (305) the first contact region within a vicinity of a second side of the photovoltaic material, doping (309) the first contact region with a second impurity type, removing (310) the mask from the emitter region, forming a passivation region overlaying the first contact region and the photovoltaic material, forming an anti-reflection coating overlaying the passivation, forming a pattern using the anti-reflection region for a first opening and a second opening, and sputtering aluminum material to form a first metal contact and a second metal contact. The photovoltaic material is characterized by a first thickness of less than 15 microns and includes a conducting layer positioned within the first thickness. The first and second impurity types are characterized by opposite polarities. The first contact region is electrically coupled to the conducting layer. The first opening is positioned within a vicinity of the first contact region and exposes the first contact region. The second opening is positioned outside the first contact region and exposes the emitter region. The first and second openings face a similar direction. The first metal contact is electrically coupled to the first contact region. The second metal contact is electrically coupled to the emitter region. The formation of the pattern comprises stripping portions of the anti-reflection region. The formation of the emitter region comprises diffusing negative emitter. The emitter region is characterized by a thickness of less than 0.2 micron. The mask comprises a photo-resist material. The formation of the first contact region comprises an isotropic etching process, and forming a recess region underneath the mask. The passivation comprises a nitride material or an oxide material. The first contact region is doped with a positive polarity and a double boron implantation at a depth of 0.2 micron. The formation of passivation comprises activating an oxide material and implanting an oxide material. The formation of the anti-reflection coating comprises depositing a dielectric material and performing plasma-enhanced chemical vapor deposition process for depositing nitride material. The formation of the emitter region comprises subjecting the photovoltaic material to phosphorus chloride oxide. A second contact region is formed between the photovoltaic material and the transferring layer. The substrate is characterized by a thickness of 250 microns. A glue layer is formed for coupling the substrate and photovoltaic material. The glue layer is characterized by a thickness of 1-3 microns. A mirror is formed (302) over the substrate by depositing metal materials or dielectric stacks. The support layer comprises a metallurgical grade polysilicon material or ceramic material, refractory material. An INDEPENDENT CLAIM is included for a processed semiconductor substrate for manufacturing a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a flow chart of a method for manufacturing a solar cell.    Form mirror (302)    Form diffusion barrier (303)    Transfer photovoltaic region (304)    Form contact region (305)    Form emitter region (306)    Form mask (307)    Etch (308)    Dope for contact region (309)    Remove mask. (310)