TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Target: The sputtering composite target is obtained by laminating the carbon-based component on at least a part of a surface of the oxide-based component. Preferred Components: When a maximum surface area of the oxide-based component is defined as a target surface area, an area ratio occupied by the carbon-based component is of 2-15% relative to 100% of the target surface area. The oxide-based component is a sintered body, and the carbon-based component is a non-sintered body.    TECHNOLOGY FOCUS - METALLURGY - Preferred Target: The sputtering composite target comprises at least one element selected tin, zinc, tungsten and germanium. Preferred Components: A proportion of a content of the element is of 1-30 mass.%.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: A content of the carbon-based component is 0.6-6 parts by weight based on 100 parts by weight of the oxide-based component.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: In method (M1), the substrate is not heated. Preferred Components: The plastic is polyethylene (PE), polypropylene (PP) or polyethylene terephthalate (PET). EXAMPLE - A carbon chip (C) was set on indium-tin oxide (ITO) component in an area ratio of 6% relative to 100% of a target surface area which was the maximum surface area of the ITO component, thereby forming a sputtering composite target. Subsequently, a glass substrate having a thickness of 1 mm was set in substrate holder. Then, after evacuating the inside of the chamber by the vacuum pump, an argon (Ar) gas as a sputtering gas was introduced into the chamber at a flow rate of 15 sccm and a gas pressure of 1 Pa. Thereafter, a voltage with high frequency (13.56 MHz) was applied between the substrate and the sputtering composite target from a power source of 50 W at room temperature (20 plus minus 5 degrees C) without heating the substrate, and sputtering was performed for a sputtering time of 10 minutes, thereby forming a transparent conductive film (test) having a thickness of 200 nm on the substrate. The obtained transparent conductive film was measured for electrical resistance by a measuring device by a four-terminal process. As a result, the transparent conductive film had an electrical resistance of 2.0x 10-4 Omega .cm. Also, the transparent conductive film had a transmittance of 88%. A comparative transparent conductive film was formed in the same manner as test film, except for using, as the sputtering target, a sintered body made of ITO and having a diameter of 4 inches and a thickness of 4 mm. The obtained transparent conductive film had an electrical resistance of 8x 10-3 Omega .cm and a transmittance of 88%.