NOVELTY - The semiconductor device such as transistor or integrated circuit comprises a heat sink (108) having an opening passing through the heat sink, a semiconductor chip (116, 118, 120) correspondingly disposed in the opening of the heat sink, an electricity conducting thin film (122) filling in a first depth portion of the opening of the heat sink, a heat conducting thick film filling in a second depth portion of the opening of the heat sink, a wire (126) electrically connecting the chip and an external circuit, and an encapsulant (128) covering a portion of the heat sink, the chip, and the wire.    USE - Used as a semiconductor device such as transistor, integrated circuit, or opto-electrical device including light-emitting diode and laser diode.    ADVANTAGE - The semiconductor device can be operated with high power to effectively bring out its original functions, and has superior heat-dissipating ability, so that blown-out of the semiconductor device by a high temperature is prevented thus greatly prolonging the operation life of the device, and high heat-conducting ability, so that a heat-dissipating device, such as a fan or a heat pipe, is unnecessary thus reducing the volume of the semiconductor device, lowering the device complexity of the semiconductor device and decreasing the cost of the device.    DETAILED DESCRIPTION - The semiconductor device such as transistor or integrated circuit comprises a heat sink (108) having an opening passing through the heat sink, a semiconductor chip (116, 118, 120) correspondingly disposed in the opening of the heat sink, an electricity conducting thin film (122) filling in a first depth portion of the opening of the heat sink, a heat conducting thick film filling in a second depth portion of the opening of the heat sink, a wire (126) electrically connecting the chip and an external circuit, and an encapsulant (128) covering a portion of the heat sink, the chip, the wire and an exposed portion of the thin film. The chip includes a first side and a second side on opposite sides. The second side of the chip is embedded in the electricity conducting thin film. The electricity conducting thin film is directly connected with the heat conducting thick film. The heat sink is a carrier including electric conduction circuits. A thickness of the heat sink is greater than 100 mu m. The chip is a bipolar junction transistor (BJT), a metal oxide semiconductor (MOS), a complimentary-metal oxide semiconductor (CMOS), a hetero-junction transistor, a light-emitting diode, a laser diode, a solar cell and an integrated circuit chip. The heat sink is set with an electric contact and the wire is electrically connected to the external circuit through the electric contact. The chip is an unpackaged semiconductor chip, a partially packaged semiconductor chip or a completely packaged semiconductor chip. A thickness of the electricity conducting thin film is less than 10 mu m. The electricity conducting thin film has a nano-scale material or a material including nano-scale composition, where the material is a metal, an inorganic material with electric conductivity, a metal oxide or a metal nitride, and is composed of a multi-layer thin film structure of electrical conductivity, where the multi-layer thin film structure is a ceramic material layer/metal layer structure, a diamond thin film/metal layer structure, a metal oxide layer/metal layer structure, or a metal nitride layer/metal layer structure. A material of the heat conducting thick film is a metal, an inorganic material with high heat conductivity, a nano material with high heat conductivity, a metal oxide, a metal nitride, carbon or carbon nanotube, or a mixture of two of metal oxides, metal nitrides, metals, nonmetals and inorganic materials. An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device.    DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of a semiconductor device.    Heat sink (108)    Semiconductor chip (116, 118, 120)    Conducting thin film (122)    Wire (126)    Encapsulant. (128)