NOVELTY - A substrate is subjected under pressure of 0.01 Pa or less (190), active group-V substance is introduced to the surface of substrate under working pressure of 0.05-2.5 Pa, and group-Ill metal vapor is introduced until an amorphous group III-V material layer is formed on the surface of substrate (196) by reactive evaporation method. Thus, group III-V amorphous material is obtained.    USE - Formation of group III-V amorphous material used for forming quantum dot p-i-n junction (claimed) of quantum dot electronic devices such as solar battery photovoltaic cell, light emitting diode, and full color display.    ADVANTAGE - The method provides of group III-V amorphous material having high photoconductivity, photo conversion ratio, and reduced absorption coefficient.    DETAILED DESCRIPTION - A substrate is subjected under pressure of 0.01 Pa or less, active group-V substance is introduced to the surface of substrate under working pressure of 0.05-2.5 Pa, and group-Ill metal vapor is introduced until an amorphous group III-V material layer is formed on the surface of substrate by reactive evaporation method. The group-Ill metal comprises aluminum, gallium, and/or indium. The group-V substance comprises nitrogen, arsenic and/or phosphorus. Additional layers such as superiorly amorphous, amorphous-nano-crystalline, amorphous doped with n-type material, amorphous doped with p-type material, and crystalline layers are formed on the substrate. The substrate is silicon, glass, ferrous metal, stainless steel, graphite, or polymer. The amorphous-nano-crystalline layer is formed using gallium nitride, aluminum-gallium nitride, aluminum-indium nitride, indium nitride, indium-gallium nitride, gallium arsenide, gallium phosphate, indium phosphate, indium-gallium arsenide, aluminum-gallium arsenide, and/or indium-gallium phosphate.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of formation of group III-V amorphous material.    Step for subjecting substrate (190)    Step for pre-treating substrate (192)    Step for lowering temperature of substrate (194)    Step for introducing active group-V substance and group-Ill metal vapor (196)    Step for cooling substrate (198)