NOVELTY - The semiconductor on insulator structure (100) for high performance thin film transistors, solar cells and active matrix displays, comprises a glass substrate (102), and a single crystal semiconductor layer (104) bonded to the glass substrate through electrolysis. A composition of the glass substrate is such that a liquidus viscosity and a strain point of the substrate are greater than or equal to 100000 Poise and greater than or equal to 710 degrees C respectively. The glass substrate with a viscosity of 200 Poise, has a temperature of below 1675 degrees C. The glass substrate includes a bulk layer and an enhanced positive ion concentration layer.    USE - The semiconductor on insulator structure is useful for high performance thin film transistors (TFTs), solar cells and active matrix displays.    ADVANTAGE - The semiconductor on insulator structure can be economically manufactured with improved bond strength, durability and device performance characteristics, allows elevated processing temperatures, and avoids excessive implantation damage to the silicon layer.    DETAILED DESCRIPTION - The semiconductor on insulator structure (100) for high performance thin film transistors, solar cells and active matrix displays, comprises a glass substrate (102), and a single crystal semiconductor layer (104) bonded to the glass substrate through electrolysis. A composition of the glass substrate is such that a liquidus viscosity and a strain point of the substrate are greater than or equal to 100000 Poise and greater than or equal to 710 degrees C respectively. The glass substrate with a viscosity of 200 Poise, has a temperature of below 1675 degrees C. The glass substrate includes a bulk layer, an enhanced positive ion concentration layer, and a reduced positive ion concentration layer. The enhanced positive ion concentration layer contains all modifier positive ions from the reduced positive ion concentration layer as a result of migration. A conductive or semiconductive oxide layer is located between the reduced positive ion concentration layer of the substrate and the single crystal semiconductor layer. The single crystal semiconductor layer is bonded to an as-drawn surface of the glass substrate through electrolysis. An INDEPENDENT CLAIM is included for a method of forming a semiconductor on insulator structure.    DESCRIPTION OF DRAWING(S) - The figure shows a block diagram of silicon on insulator device.    Semiconductor on insulator structure (100)    Glass substrate (102)    Semiconductor layer (104)    Further device layers. (106)