NOVELTY - The method of producing silicon wafers by cutting silicon ingots for manufacturing solar cells and solar modules, comprises removing materials from a side of the silicon ingot by an etching process for 1-25 minutes at 20-25 degrees C. The material removal takes place isotropically up to 3-160 mu m with a constant average cutting speed of 3-15 mu m per minute over the entire side. The etching treatment takes place by a strong oxidizing acid or a mixture of acids. A constant average cutting takes place to a thickness of the sides of 3-150 mu m. The temperature of the etching agent varies at plus minus 1 degrees C.    USE - Method of producing silicon wafers for manufacturing solar cells and solar modules.    ADVANTAGE - The method is capable of producing micro-crack-free silicon wafers with improved tensile strength and reduced thickness of less than 230 mu m.    DETAILED DESCRIPTION - The method for producing silicon wafers by cutting silicon ingots for manufacturing solar cells and solar modules, comprises removing materials from a side of the silicon ingot by an etching process for 1-25 minutes at 20-25 degrees C. The average material removal takes place isotropically up to 3-160 mu m with a constant average cutting speed of 3-15 mu m per minute over the entire side. The etching treatment takes place by a strong oxidizing acid or a mixture of such acids. A constant average cutting takes place to a thickness of the sides of 3-150 mu m. The temperature of the etching agent varies at plus minus 1 degrees C. The silicon ingot is etched with a solution of nitric acid (50-70%) and hydrofluoric acid (40-60%) in the ratio of 8:1 to 4:1. The ratio of the surface roughness Rmax of the side after the etching process to the surface roughness Rmax of the side before the etching process is 10:1 to 0.5:1. The silicon ingot is subjected to an abrasive grinding or polishing treatment before the etching process. INDEPENDENT CLAIMS are included for:    (1) a crack-free silicon ingot; and    (2) a micro-crack-free wafer.    DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of silicon wafers.