NOVELTY - A thin-film solar energy battery comprises a flexible compound substrate including three sub-batteries, and comprising a transparent polyimide thin-film (3); a silica-titania or silica-zirconia wideband anti-reflection film (2) produced through a sol-gel on a surface of the polyimide thin-film; and a polyhedron oligomerization semi-siloxane layer (1). The sub-batteries comprise an upper sub-battery, a middle sub-battery, and a lower sub-battery.    USE - A thin-film solar energy battery for a three-knot flexible stack.    ADVANTAGE - The silica-titania or silica-zirconia wideband anti-reflection film improves anti-reflection rate, and the polyhedron oligomerization semi-siloxane layer improves anti-ozone ability of the battery. The three sub-batteries improve the solar spectrum, and improve photo-electricity conversion.    DETAILED DESCRIPTION - The upper sub-battery comprises an n-type cadmium sulfide layer (5) which is 20-150 nm thick, and a p-type cadmium sulfide (6) which is 500-1000 nm thick. The middle sub-battery comprises an n-type cadmium sulfide layer (8) which is 20-150 nm thick, and a p-type cadmium sulfide (9) which is 500-1000 nm thick. The lower sub-battery comprises an n-type cadmium sulfide layer (11) which is 20-150 nm thick, and a p-type cadmium sulfide (12) which is 500-1000 nm thick. Transparent conducting oxides middle electrode layers (7) are located between the upper-middle sub-batteries and the middle-lower sub-battery, and have a thickness of 5-100 nm. The transparent polyimide thin-film and the n-type cadmium sulfide layer of the compound substrate are coupled by a transparent conducting oxide upper electrode layer (4) whose thickness is 500-1500 nm. The p-type copper indium selenium has molybdenum metal lower electrode layer (13) whose thickness is 500-1500 nm. The transparent conducting oxide comprises aluminum doping zinc oxide, tin oxides, or tin doped indium oxide.    DESCRIPTION OF DRAWING(S) - The drawing is a sectional view of the thin-film solar energy battery (Drawing includes non-English language text).    Polyhedron oligomerization semi-siloxane layer (1)    Wideband anti-reflection film (2)    Transparent polyimide thin-film (3)    Transparent conducting oxide upper electrode layer (4)    N-type cadmium sulfide layer (5)    P-type cadmium sulfide (6)    Transparent conducting oxides middle electrode layers (7)    N-type cadmium sulfide layer (8)    P-type cadmium sulfide (9)    N-type cadmium sulfide layer (11)    P-type cadmium sulfide (12)    Molybdenum metal lower electrode layer (13)