NOVELTY - The ion implantation device comprises a source for generating hydrogen from electrochemical or chemical reaction and by electrolysis of water, a system for continuously supplying the deionized water to the source, a gas housing integrated with the source, an ionization chamber (8), a unit for detecting the abnormality and/or leak of hydrogen, a unit for stopping the generation of hydrogen when the abnormality and/or leak is detected, a unit for detecting the fall of pressure in the gas supply circuit (6), optionally a sorting unit, and a purification unit.    USE - The ion implantation device is useful in semiconductor industry such as Smart cut (RTM: Technological process that enables the transfer of very fine layers of crystalline material onto a mechanical support).    ADVANTAGE - The ion implantation device ensures low cost for the manufacture, storage, transport and handling of hydrogen, avoids the problem of security when using high pressure hydrogen cylinders, and is stable for long time.    DETAILED DESCRIPTION - The ion implantation device comprises a source for generating hydrogen from electrochemical or chemical reaction and by electrolysis of water, a system for continuously supplying the deionized water to the source, a gas housing integrated with the source, an ionization chamber (8), a unit for detecting the abnormality and/or leak of hydrogen, a unit for stopping the generation of hydrogen when the abnormality and/or leak is detected, a unit for detecting the fall of pressure in the gas supply circuit (6), optionally a sorting unit, and a purification unit. The output of the hydrogen source is connected to a gas line that supplies the gas to the ionization chamber. The source is connected to an exterior of the high tension zone of the ionic implanter. The quantity of hydrogen stored in the source is 1 liter. The hydrogen has a pressure of less than 10 bars in the source. An INDEPENDENT CLAIM is included for an ionic implantation process.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of an ion implantation device.    Gas supply unit (6)    Ionization chamber (8)    Acceleration zone (10)    Electrostatic lens (14)    Sweep zone (16)    Ion beam (20)    Implantation chamber. (22)