NOVELTY - The method involves capturing (2) luminescence images from partially processed band gap materials and processing (3) the images to provide information about defects such as dislocations within the band gap material. The resultant information is used (4) to predict various key parameters of a device manufactured from the band gap material.    USE - Method of conducting analysis of band gap material e.g. monocrystalline silicon wafer for manufacture of solar cell. Can also be used in conducting analysis of thin film silicon wafer, cadmium telluride (CdTe) silicon wafer, amorphous silicon wafer, micro-morph silicon wafer, nanocrystalline silicon on glass and copper indium gallium diselenide thin film material.    ADVANTAGE - The density of structural defects as determined from a wafer by luminescence imaging at an early stage are correlated with the current density or voltage or other cell parameters so that identification of structural defects in monocrystalline silicon wafer from luminescence images is easy and more reliable.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) method of predicting operational characteristics of device;    (2) method of conducting analysis of silicon wafer material;    (3) system for conducting analysis of band gap material;    (4) system for predicting operational characteristics of device;    (5) system for distinguishing dislocation defects from grain boundaries in monocrystalline silicon wafer;    (6) method for monitoring process for reducing density of defects in band gap material;    (7) method for controlling process for reducing density of defects in band gap material;    (8) system for monitoring process for reducing density of defects in band gap material; and    (9) system for controlling process for reducing density of defects in band gap material.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating method of conducting analysis of band gap material.    Process of conducting analysis of band gap material (1)    Step of capturing luminescence images of band-gap material (2)    Step of processing luminescence images (3)    Step of using processing result to predict key parameters of device (4)