NOVELTY - The battery has a transparent conductive thin film layer connected to a substrate as an anode, and three materials with different band gap structures connected with each other in a light incident direction to be an absorption layer, and forming a three-segment structure. Amorphous silicon carbide thin film and an amorphous germanium-silicon thin film with an adjustable band gap are respectively arranged at a top part, and middle part of the battery, and a microcrystalline silicon thin film is formed at a bottom part of the battery.    USE - Three-segment thin film solar battery.    ADVANTAGE - The battery adopts the material with different band gap structures connected with each other in a light incident direction to be the absorption layer and forms the three-segment structure for increasing the optical capture. The method adjusts ratio of components germanium, silicon in an intrinsic layer to obtain different band gaps, and increases the optical absorption. The battery adopts plasma enhanced chemical vapor deposition (PECVD) film formed with the less technical process energy consumption, and uses laser scribing to implement the inner serial connection of battery sheets without the photo-etching technique. The production of the battery is high.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing three-segment thin film solar battery with adjustable band gap.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a three-segment thin film solar battery.'(Drawing includes non-English language text)'    I-type amorphous silicon carbide layer (I1)    I-type amorphous germanium-silicon layer (I2)    I-type microcrystalline silicon layer (I3)    N-type amorphous silicon carbide layer (N1)    N-type amorphous germanium-silicon layer (N2)    N-type amorphous silicon layer (N3)    P-type amorphous silicon carbide layer (P1)    P-type amorphous germanium-silicon layer (P2)    P-type amorphous silicon layer (P3)