NOVELTY - An aromatic polyimide precursor solution formed by dissolving aromatic polyimide precursor in solvent is flow-spread on the surface of elongate support component, and an aromatic polyimide precursor solution layer is formed. The removal of solvent from the aromatic polyimide precursor solution layer is carried out, the formed self-supporting aromatic polyimide precursor layer is peeled from the support component, and stretched. The stretched self-supportive aromatic polyimide precursor film is heated at high temperature, to manufacture self-supportive aromatic polyimide film.    USE - Manufacture of aromatic polyimide film used for glass board material and quartz base material of flexible wiring board. Uses include but are not limited to substrate of electronic component mounted in electronic device e.g. image display apparatus, electrical base material, electronic component, insulation component, laminate for manufacturing wiring base material, metal wiring of electronic component e.g. integrated circuit chip, metal wiring base material such as flexible printed circuit, and covering material for integrated circuit chip, liquid crystal display, organic electroluminescent display, electronic paper and substrate of solar cell.    ADVANTAGE - The aromatic polyimide film is manufactured reliably, steadily and easily, and has low hygroscopic expansion coefficient.    DETAILED DESCRIPTION - An aromatic polyimide precursor solution formed by dissolving aromatic polyimide precursor in solvent is flow-spread on the surface of elongate support component under conveyance, and an aromatic polyimide precursor solution layer is formed. The evaporative removal of some solvent is carried out by heating the aromatic polyimide precursor solution layer, and a self-supporting aromatic polyimide precursor layer is formed. The aromatic polyimide precursor layer is peeled from the elongate support component, and the formed self-supportive aromatic polyimide precursor film is stretched by heating. The stretched self-supportive aromatic polyimide precursor film is heated at high temperature, to manufacture self-supportive aromatic polyimide film. The linear expansion coefficient along width direction of aromatic polyimide film is less than the linear expansion coefficient along conveyance direction. The solvent content of self-supportive aromatic polyimide precursor film is 25-45 mass%, and the imidation ratio is 5-40%. The stretching of self-supportive aromatic polyimide precursor film along width direction is carried out by heating at 80-240 degrees C. The conversion of stretched self-supportive aromatic polyimide precursor film into self-supportive aromatic polyimide film is carried out at 350-580 degrees C.