NOVELTY - The method of manufacturing a semiconductor device such as light-emitting device, light-sensitive device and a memory device, comprises depositing a buffer layer over a semiconductor surface, depositing a second semiconductor layer over a surface of a first strained semiconductor layer, depositing a capping layer (8) over the second semiconductor layer, and treating the first semiconductor layer to produce a first region (2) having a first value of average surface lattice parameter and a second region (3) having a second value of average surface lattice parameter.    USE - The method is useful for manufacturing a semiconductor device such as light-emitting device, light-sensitive device and a memory device (all claimed).    ADVANTAGE - The method is capable of economically and feasibly manufacturing the semiconductor device with a large number of distinct active regions, avoids the deterioration of the properties of the quantum dot active region and the residual contamination of the surface during the masking process, and maintains the properties of the quantum dots through a stack of multiple layers without fabricating an individual mask for each layer thus capable of providing high performances to the devices.    DETAILED DESCRIPTION - The method of manufacturing a semiconductor device such as light-emitting device, light-sensitive device and a memory device, comprises depositing a buffer layer over a semiconductor surface, depositing a second semiconductor layer over a surface of a first strained semiconductor layer, depositing a capping layer (8) over the second semiconductor layer, treating the first semiconductor layer to produce a first region (2) having a first value of average surface lattice parameter and a second region (3) having a second value of average surface lattice parameter different from the first value, depositing another semiconductor layer over the capping layer, and depositing another capping layer over the another semiconductor layer. Self-organized islands (6, 7) form quantum dots over both the first and second regions. The self-organized islands over the first region have a first average value of a parameter and the self-organized islands over the second region have a second average value of a parameter different from the first value. The quantum dots over the first region have different optical properties, light-absorbing properties and carrier storing properties from the quantum dots over the second region. The semiconductor surface further includes a third region having a third value of average surface lattice parameter different from the first and second values. The quantum dots over the third region have different optical properties from the quantum dots over the first and second regions. The parameter is the average height of the self-organized islands in a direction perpendicular to the plane of the semiconductor surface, average width of the self-organized islands in a direction parallel to the plane of the semiconductor surface, average shape of the self-organized islands, and average composition of the self-organized islands. The treatment of the first semiconductor layer includes forming strain-relieving pits in the first and second regions of the semiconductor layer respectively. The pits comprise a first depth, a second depth different from the first depth, a first shape projected on the plane of the first semiconductor layer, a second shape projected on the plane of the first semiconductor layer, a first sidewall design, a second sidewall design different from the first sidewall design, a first distribution pattern, and a second distribution pattern different from the first distribution pattern. An INDEPENDENT CLAIM is included for a semiconductor device.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a step of forming quantum dots with different properties in a different pre-defined region over a substrate.    Substrate (1)    First region (2)    Second region (3)    Wetting layers (4, 5)    Self-organized islands (6, 7)    Capping layer. (8)