TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The upper electrode is an electrode patterned into a predetermined pattern and a direct current (DC) or alternate current (AC) voltage is applied, or DC and AC voltages are concurrently applied. The upper electrode is an electrode having a conductive nanostructure formed on a substrate, where the conductive nanostructure is at least one selected from a metal, a conductive polymer and/or a carbon nanotube.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The patterning step via the electrohydrodynamic lithography involves applying the reaction mixture to a substrate disposed between upper and lower electrodes; and applying an electric, magnetic, or electric and magnetic field to the upper and lower electrodes to generate an electric force in the reaction mixture, thus preparing an inorganic material from the inorganic precursor. Preferred Components: The inorganic precursor is a metal oxide precursor or metal nitride precursor. The metal oxide precursor is a metal alkoxide and/or composite metal alkoxide. The inorganic material is a semiconductor material, insulating material, or magnetic material.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The stabilizer is at least one selected from b-diketone and/or beta -ketoester (preferably benzoylacetone, acetylacetone, methyl acetoacetate, ethyl acetoacetate, isopropyl acetoacetate, and/or isobutyl acetoacetate). The solvent is at least one selected from aliphatic hydrocarbons, aromatic hydrocarbons, ketones, ethers, acetates, alcohols, amides, and/or silicones. EXAMPLE - Zinc 2-methoxyethoxide (1.5 mmol) was mixed with an equimolar amount (1.5 mmol) of benzoylacetone under a dry atmosphere with a relative humidity (RH) of less than 5%. The resulting mixture (0.5 ml) was then mixed with isopropyl alcohol (IPA, 2.5 ml) as a solvent to prepare a composition for forming an inorganic pattern. The reaction mixture was spin-coated on a silicon substrate with chromium (Cr) deposited to a thickness of 100 nm as an electrode, 2 V/ mu m of a direct current (DC) electric field was applied between the silicon substrate and a gold (Au)-coated upper electrode placed over the Cr electrode so as to leave a gap between the reaction mixture layer and the Au electrode, and the substrate was allowed to stand at room temperature for 1 hour such that the applied dielectric composition formed a pattern with regular spacing. The patterned lower (i.e., Cr) substrate was annealed at 500 degrees C for 3 hours under atmospheric pressure to convert the zinc precursor into zinc oxide (ZnO), followed by removal of residual organic material to obtain ZnO pattern. As the upper electrode, non-patterned uniform conductive gold (Au) thin film was used.