TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: Cleaning treatment with silicon chip surface comprises respectively ultrasonic cleaning the silicon chip in acetone, chloroform, ethanol, and water, for 1-10 minutes, where ultrasonic power is 50-150 W; putting silicon chip in HF solution (1-10 mass%) for 5-10 minutes; removing silicon dioxide on the surface; washing with deionized water; and blow-drying with high purity nitrogen. Alkali solution etching comprises putting the cleaned silicon chip in potassium hydroxide, sodium hydroxide, ethylenediamine-pyrocatechol-water, or ammonia solution with pH of 10-14 for 0.5-3 hours at 40-100 degrees C, to prepare micron scale silicon island structure on silicon surface, where height of silicon island is 5-7 mu m. RIE etching comprises shifting the array of precious slag ball with compact single layer hexahedron accumulated on the water surface on cleaned silicon surface; and preparing silicon island microstructure, where etching gas is sulfur hexafluoride (SF6) and trifluoromethane (CHF3), velocity of SF6 is 20-45 standard cm3/minute (sccm), velocity of CHF3 is 3-12 sccm, etching power is 80-160 W, cavity pressure is 25-60 mTorr, etching time is 300-1000 seconds, and height of the obtained silicon island is 1.0-3.0 mu m. The photo-etching comprises providing cleaned silicon chip as substrate material; processing for 2-8 minutes through oxygen plasma system; quenching after spin coating photoresist; exposing under mask blank exposure machine; developing in developing liquid; blow-drying using nitrogen after cleaning in distilled water, where micron structure of photoresist is obtained on the silicon chip; and finally using the obtained silicon chip to prepare silicon grid microstructure via RIE etching, where the height of prepared silicon grid is 3-6 mu m. The nanopressing and printing comprises spin coating MR-1 7030(RTM: thermoplastic polymer) or polymethylmethacrylate on the cleaned silicon chip surface; taking the silicon nitride of micron scale array type structure as molding board; constructing micron scale ordered array structure on the silicon chip surface; and taking polymer with array structure as barrier layer to prepare micron scale silicon island via RIE etching, where height of the obtained silicon island is 2-4.5 mu m. The electroless deposition comprises putting silicon chip having micron scale silicon island or grid structure on its surface in mixing solution of 4-5 M HF and 0.01-0.02 M silver nitrate (AgNO3); and performing electroless deposition of silver nanoparticle for 1-4 minutes. It comprises putting silicon chip having micron scale silicon island or grid structure on its surface in 0.01-0.05 M AgNO3 solution, where deposition voltage is 400-800 mV and deposition time is 10-20 minutes; or putting silicon chip having micron scale silicon island or grid structure on its surface in 0.01-0.05 M chloroauric acid solution, where deposition voltage is 500-700 mV and deposition time is 8-20 minutes. Preferred Component: The fluorosilanizing agent is (heptadecafluoro-1,1,2,2-tetradecyl)trimethoxysilane, heptadecafluorooctanesulfonic acid, perfluorodecyltriethoxysilane, dodecyltrichlorosilane, octadecyltrichlorosilane, or perfluorooctylmethyldichlorosilane. The silicon chip is silicon chip with crystal formation of n-100, p-100, n-111, or p-111.