NOVELTY - A LED includes a strain-reducing seed layer (220) comprising clusters of aluminum nitride, magnesium nitride, or indium nitride disposed on a substrate (210); an epitaxial layer (240) comprising n-type doped semiconductor layer (242), light-emitting layer (244), and p-type doped semiconductor layer (246); a first electrode (250) disposed on n-type doped semiconductor layer not covered by the light-emitting layer; and a second electrode (260) disposed on p-type doped semiconductor layer.    USE - LED for use in optoelectronic industry.    ADVANTAGE - The strain-reducing seed layer lowers the structural strain of a subsequently formed high-temperature material to reduce dislocation density of a subsequently deposited gallium nitride film layer.    DETAILED DESCRIPTION - A LED includes a substrate (210) comprising glass, silicon, gallium arsenide, gallium nitride, aluminum-gallium arsenide, gallium phosphide, silicon carbide, indium phosphide, boron nitride, zinc oxide, aluminum oxide, lithium aluminate, or aluminum nitride; a strain-reducing seed layer (220) comprising clusters of aluminum nitride, magnesium nitride, or indium nitride disposed on the substrate; and an epitaxial layer (240) comprising n-type doped semiconductor layer (242), light-emitting layer (244), and p-type doped semiconductor layer (246). A first electrode (250) is disposed on n-type doped semiconductor layer not covered by the light-emitting layer and is electrically connected to n-type doped semiconductor layer. A second electrode (260) is disposed on p-type doped semiconductor layer and electrically connected to the p-type doped semiconductor layer. The first electrode is electrically insulated from the second electrode. An epitaxial lateral overgrowth layer (230) of aluminum-indium-gallium nitride is disposed between the strain-reducing seed layer and n-type doped semiconductor layer, and covers the clusters and substrate. INDEPENDENT CLAIMS are included for:    (1) fabrication of LED including spreading metallic material (i.e. aluminum, magnesium, or indium) on a substrate, and providing nitrogen-containing gas (preferably ammonia, 1-dimethyl hydrazine, or t-butyl hydrazine) to react with the metallic material to form a strain-reducing seed layer;    (2) an optoelectronic device comprising a substrate, a strain-reducing seed layer, and an optoelectronic device unit, e.g. laser diode, photodetector, or solar cell; and    (3) fabrication of optoelectronic device.    DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view of a LED.    Substrate (210)    Strain-reducing seed layer (220)    Epitaxial lateral overgrowth layer (230)    Epitaxial layer (240)    N-type doped semiconductor layer (242)    Light-emitting layer (244)    P-type doped semiconductor layer (246)    First electrode (250)    Second electrode (260)