NOVELTY - A solar cell absorption layer target comprises (wt.%): copper (Cu) (25), indium (In) (22.5-10), gallium (Ga) and selenium (Se) (2.5-15) and aluminum (Al) (50).    USE - Solar cell absorption layer target.    ADVANTAGE - The absorption layer target has stable performance. The method is simple, and has high efficiency and low cost.    DETAILED DESCRIPTION - The solar cell absorption layer target comprises (wt.%): Cu (25), In (22.5-10), Ga and Se (2.5-15) and Al (50). The target has uniform CuIn1-xGaxSe2 or CuIn1-xAlxSe2 phase of more than 90% relative density, where x is 0.1-0.6. An INDEPENDENT CLAIM is included for a method for preparing the copper indium aluminum selenium (CIAS) or copper indium gallium selenium (CIGS) solar cell absorption layer target comprising methods 1, 2, and 3. The method 1 comprises mixing copper selenide (Cu2Se), indium selenide (In2Se3) and gallium selenide (Ga2Se3) powders, 1-2 times milling resulting mixture with zirconium dioxide grinding balls in nylon pot by planetary ball mill to form powder 1 having mean particle diameter of less than 30 mu m; or mixing Cu2Se, In2Se3 and aluminum selenide (Al2Se3) powders, 1-2 times milling resulting mixture with zirconium dioxide grinding balls in nylon pot by planetary ball mill to form powder 2 having mean particle diameter of less than 30 mu m; and putting powder 1 or 2 in hot press mold, pressing at 15-40 MPa in protective atmosphere, uniformly heating to 500-900 degrees C at 5-30 degrees C/minute for 0.5-12 hours, cooling furnace to normal temperature, decompressing and discharging. The method 2 comprises mixing powders same with method 1; putting powder 1 or 2 in cold press mold, pressurizing to 400-1000 MPa, keeping pressure for 2-4 minutes, which forms biscuit, or putting powder 1 or 2 in cold isopressing mold, pressurizing to 100-280 MPa, keeping pressure for 2-6 minutes, which forms biscuit; sintering biscuit by sintering furnace in protective atmosphere, uniformly heating to 650-900 degrees C at 5-30 degrees C/minute, preserving heat for 0.5-12 hours, cooling with furnace to normal temperature, and discharging. The method 3 comprises mixing powders same with method 1; pressing powder by steps same with method 2; putting powder 1 or 2 in hot press mold, pressing at 15-40 MPa in protective atmosphere, uniformly heating to 500-900 degrees C at 5-30 degrees C/minute, preserving for 0.5-12 hours, cooling with furnace to normal temperature, decompressing and discharging; or sintering biscuit by sintering furnace in protective atmosphere, uniformly heating to 650-900 degrees C at 5-30 degrees C/minute, pressing at 15-40 MPa, preserving heat for 0.5-12 hours, cooling with furnace to normal temperature, decompressing and discharging.