NOVELTY - A porous semiconductor electrode (4) comprises tungsten oxide (3) or tungsten-oxide composite material having an average particle diameter of 1-548 nm. The tungsten oxide or tungsten-oxide composite material has peaks (I-III) whose 2 theta is 22.5-25 degrees . When the peak at which 2 theta exists in a range of 22.8-23.4 degrees is set to A, when the peak at which 2 theta exists in a range of 23.4-23.8 degrees is set to B, and when the peak at which 2 theta exists in a range of 24.25-24.5 degrees is set to D, the intensity ratio (A/D) and intensity ratio (B/D) are 0.5-2.    USE - Visible-light-responsive type porous semiconductor electrode is used in dye-sensitized solar cells (claimed).    ADVANTAGE - The porous semiconductor electrode has improved and stabilized visible-light responsiveness. Short circuit of n-type semiconductor electrode and counter electrode is prevented.    DETAILED DESCRIPTION - A porous semiconductor electrode comprises tungsten oxide or tungsten-oxide composite material having an average particle diameter (D50) of 1-548 nm by image analysis, and the following properties when measured with X-ray diffraction method. The tungsten oxide or tungsten-oxide composite material has peaks (I-III) whose 2 theta is 22.5-25 degrees . When the peak at which 2 theta exists in a range of 22.8-23.4 degrees is set to A, when the peak at which 2 theta exists in a range of 23.4-23.8 degrees is set to B, when the peak at which 2 theta exists in a range of 24-24.25 degrees is set to C, and when the peak at which 2 theta exists in a range of 24.25-24.5 degrees is set to D, the intensity ratio (A/D) and intensity ratio (B/D) are 0.5-2, and the intensity ratio (C/D) is 0.04-2.5. When the peak at which 2 theta exists in a range of 33.85-34.05 degrees is set to E and when the peak at which 2 theta exists in a range of 34.05-34.25 degrees is set to F, the intensity ratio (E/F) is 0.1-2. When the peak at which 2 theta exists in a range of 49.1-49.7 degrees is set to G and when the peak at which 2 theta exists in a range of 49.7-50.3 degrees is set to H, the intensity ratio (G/H) is 0.04-2. An INDEPENDENT CLAIM is included for cell structure of dye-sensitized solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the dye-sensitized solar cell.    Glass substrate (1)    Transparent conductive film (2)    Tungsten oxide (3)    Porous semiconductor electrode (4)    Electrolytic composition (10)