NOVELTY - Processing precursor specie(s) includes initiating selective growth of a crystal material including indium gallium nitride within the exposed reaction region while maintaining the dielectric masking layer free from growth of any crystalline material of the indium gallium nitride.    USE - Method for processing precursor specie(s) to form a gallium containing film used in optical devices (claimed), lasers, LEDs, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, or transistors.    ADVANTAGE - The method can produce high-indium-content (greater than 5%) indium containing layers in gallium-nitride based light emitting devices such as laser diodes and LEDs on nonpolar and semipolar gallium nitride substrates. This can fabricate high efficiency light emitting devices at any wavelength with a high quality.    DETAILED DESCRIPTION - Processing precursor specie(s) comprises:    (A) providing a non-polar or semi-polar gallium nitride containing substrate having a surface region;    (B) forming a dielectric masking layer overlying the surface region to expose a growth region which is an exposed gallium nitride crystalline material and having a spatial dimension of not greater than 10 microns in a narrowest dimension;    (C) loading the non-polar or semi-polar gallium nitride containing substrate onto a susceptor in a reaction chamber, where the susceptor is at 600-1200 degrees C;    (D) introducing an indium precursor species into the chamber;    (E) introducing nitrogen bearing species into the chamber;    (F) introducing gallium species into the chamber;    (G) combining the indium precursor species, nitrogen bearing species, and gallium species;    (H) initiating selective growth of a crystal material including indium gallium nitride within the exposed reaction region while maintaining the dielectric masking layer free from growth of any crystalline material of the indium gallium nitride;    (I) maintaining a reaction at 600-1200 degrees C for the crystal material capable of emitting visible light and the crystalline material having higher indium concentration compared to an indium concentration provided on a growth region of greater than 15 mu m such than the indium specie(s) diffuses at a faster rate than gallium specie(s) to cause the higher indium concentration at the growth region; and    (J) forming an indium gallium nitride containing film.    INDEPENDENT CLAIMS are included for:    (1) a gallium containing crystalline material comprising a bulk non-polar gallium and indium containing crystalline material having a thickness of 20-1000 nm; a spatial width dimension of not greater than 10 mu m characterizing the thickness of the bulk non-polar gallium indium containing crystalline material; and a photoluminescent characteristic of the crystalline material having a first wavelength which is greater than or equal to 5 nm greater than a second wavelength, where the second wavelength is derived from an indium and gallium containing crystalline material grown on a growth region of greater than 15 mu m;    (2) an optical device capable of emitting light at a wavelength of 480-570 nm comprising a gallium containing substrate structure having a surface region; a region of insulating material having growth region(s) provided on the surface region, a semi-polar gallium indium containing crystalline material provided on a portion of the growth regions of the gallium containing substrate structure; a spatial width dimension of not greater than 10 mu m characterizing each of the growth regions; and a first indium concentration characteristic of the crystalline material, where the first indium concentration characteristic is greater than a second indium concentration characteristic by greater than or equal to 1%, the second indium concentration characteristic being derived from an indium gallium containing crystalline material grown on a growth region of greater than 15 mu m; and    (3) a method for forming a crystalline gallium indium nitride film.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional side-view of buried ridge laser architecture.    Buried stripe laser architecture (600)