NOVELTY - Oligocondensed perylene bisimide derivatives (I) are new.    USE - In organic electronics, such as organic field-effect transistors, organic light-emitting diodes and solar cells; for optical labels, and for invisible marking of products and as pigments; in light-collecting plastics component combined with solar cell; as pigment dye in electrophoretic displays; for coloring organic and inorganic materials; for obtaining markings and inscriptions which absorb infrared light but are invisible to the human eye; as infrared absorbers for heat management (all claimed); as materials which absorb infrared (IR) laser beams in the fusion treatment of plastics parts, for preparing aqueous polymer dispersions which absorb in the near infrared region of the electromagnetic spectrum; and as active components in photovoltaics.    ADVANTAGE - The oligocondensed perylene bisimide derivative exhibits absorption is the ultra violet (UV)/visible region.    DETAILED DESCRIPTION - Oligocondensed perylene bisimide derivatives comprising two outer moieties of formula (Ia) or one outer moiety of formula (Ia) and one outer moiety of the formula (Ib) and n inner moieties selected from moieties of formulae (Ic) and (Id), are new.    R' aand R' b=alkyl, alkenyl, alkadienyl, alkynyl, cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl or hetaryl (all optionally substituted), or H;    n=0-6;    R 1=H, alkyl, cycloalkyl, heterocycloalkyl, aryl, hetaryl or polycyclyl;or    R 1+R 1=divalent bridging group X between two moieties (Ia);    X=1-20 bridge atoms between the flanking bonds;    R 2and R 3=H, alkyl, (hetero)cycloalkyl, (het)aryl or halo.    INDEPENDENT CLAIMS are included for the following:    (1) preparation of the oligocondensed perylene bisimide (I);    (2) an organic field-effect transistor comprising a substrate having at least one gate structure, a source electrode and a drain electrode and at least one of the oligocondensed perylene bisimide (I) as a semiconductor;    (3) a substrate comprising several organic field-effect transistors, at least some of the field-effect transistors comprising at least one of the oligocondensed perylene bisimide (I) as a semiconductor; and    (4) a semiconductor component comprising at least one of the substrate.