NOVELTY - Manufacturing textured crystal layer of a photoactive, chalcogen based layer lattice-semiconductor (07) on a chemically resistant, metallic conductive layer (09) with the participation of a metal promoter to stimulate two-dimensional crystal growth parallel to the surface of metallic conductive layer, comprises saturation of the metallic conductive layer with a saturation material before the application of a metal promoter layer (06).    USE - The textured crystal layer is useful in a thin-film solar cell based on a chalcogen based lattice layer-semiconductor with the metallic conductive layer as a back contact (claimed).    ADVANTAGE - The process provides the metallic conductive layer in an inexpensive manner.    DETAILED DESCRIPTION - Manufacturing textured crystal layer of a photoactive, chalcogen based layer lattice-semiconductor (07) on a chemically resistant, metallic conductive layer (09) with the participation of a metal promoter to stimulate two-dimensional crystal growth parallel to the surface of metallic conductive layer, comprises: either saturation of the metallic conductive layer with a saturation material before the application of a metal promoter layer (06); or direct crystallization of the layer lattice-semiconductor, providing a precursor metal layer by coating a substrate (01) with a predetermined temperature stability limit (TG) with a metal or metal alloy having a thickness (s) for the formation of layer lattice-semiconductor, applying a metal promoter layer with a predetermined eutectic temperature (T-eutectic) in a metal-chalcogen-eutectic with a layer thickness (d2) on the precursor metal layer with (d2 less than s) and heating the precursor metal layer via a process time (t) to a process temperature (TH) with (T-eutectic) less than (TH) less than (TG) in a gas atmosphere (08) containing chalcogen at at least one process pressure (pT), where the layer thickness (s) and the process time (t) are provided in relation to a thin precursor metal layer in a range of s/2 above a substrate is not reacted with the gas atmosphere containing chalcogen and remains as metallic conductive layer. An INDEPENDENT CLAIM is included for the textured crystal layer of a photoactive layer lattice-semiconductor on a chemically resistant, metallic conductive layer, produced by the above process.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of a process of saturation of the metal layer through the metal promoter.    Substrate (01)    Metal promoter layer (06)    Layer lattice-semiconductor (07)    Gas atmosphere (08)    Metallic conductive layer. (09)