TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Cell: In the crystalline silicon solar cell, the first emitter regions have a depth not less than 0.2 mu m. The second emitter regions have a depth not less than 0.2 mu m. The relatively higher surface resistance of the first emitter regions is in the range from approximately 80 to 400 ohm/square. The relatively higher surface resistance of the first emitter regions is in the range of from approximately 90 to 180 ohm/square. The relatively lower surface resistance of the second emitter regions is in the range from approximately 5 to 80 ohm/square. The relatively lower surface resistance of the second emitter regions is in the range from approximately 20 to 60 ohm/square. The width of each of the fingers is not less than a width of each of the second emitter regions. The fingers are formed by depositing a metal over a semiconductor surface by a method selected from a group consisting of: (a) screen printing, (b) transfer coating, (c) printing, (d) thermal inkjet printing, (e) electro-deposition, (f) eletroless plating, and (g) electroplating. The metal comprises sliver. The metal comprises silver paste. The silver paste comprises DuPont PV145, PV159, FERRO 33-462, Heraeus SOL-9 11 8A or Noritake NP-4682C. Preferred Method: In fabricating a crystalline solar cell, the oxide layer is removed before forming the fingers. The first emitter regions have a depth not less than 0.2 mu m. The second emitter regions have a depth not less than 0.2 mu m. The first emitter regions have a surface resistance in the range from approximately 80 to 400 ohm/square. The first emitter regions have a surface resistance in the range of from approximately 90 to 180 ohm/square. The second emitter regions have a surface resistance in the range from approximately 5 to 80 ohm/square. The second emitter has a surface resistance in the range from approximately 20 to 60 ohm/square. The first emitter regions and the second emitter regions are interspersed in the front surface of the semiconductor substrate. The second emitter regions are conducted by oblation of predetermined portion of the oxide layer by a method selected from a group consisting of: (a) etching paste; (b) photolithography; (c) inkjet printing; and (d) laser. The fingers are formed by depositing metal paste on the front surface of the semiconductor substrate. The fingers are formed by heating the semiconductor substrate for a duration in a temperature of about 700-950 degrees C. The width of each of the fingers is not less than a width of each of the second emitter region. The metal paste comprises DuPont PV145, PV159, FERRO 33-462, Heraeus SOL-9 11 8A and Noritake NP-4682C.