TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Process: The process further comprises: repositioning the seed layer with respect to a top side and a bottom side following cooling the seed layer, reheating the seed layer to melt at least a previously unmelted portion of the seed layer and close the seams, and recooling the seed layer; heating the seed layer at 500-750 degrees C; high temperature annealing or treating with heat; tapering at least one side of the tiles; polishing at least one side of the tiles; and introducing molten silicon to fill the gaps and cooling of the seed layer through the thin layer of tiles. The joining comprises: heating the tiles to melt at least a portion of the tiles and close the seams; and cooling the seed layer. The cooling comprises 100 degrees C an hour. The joining comprises: contacting the tiles at both ends of at least one seam with electrodes; flowing electrical current through the tiles between the electrodes to melt at least a portion of the tiles and close the seams; optionally repeating the contacting and the flowing for each seam in the layer; and cooling the seed layer. The electrodes remain stationary with respect to the tiles during the flowing electrical current. At least one electrode moves with respect to the tiles during the flowing of the electrical current. The joining comprises plasma deposition of amorphous silicon to close the seams. The deposition of amorphous silicon comprises conformal plasma deposition. The heating transforms the amorphous silicon to crystalline silicon. The joining comprises: applying photons to close the seams; and layer deposition to close the seams. The applying photons comprise laser welding or flash lamp melting of the silicon at the seams. The layer deposition comprises oxidation, chemical vapor deposition, liquid phase solution deposition, plasma-enhanced deposition and/or molecular beam epitaxy. The layer deposition comprises epitaxial deposition at 700-1100 degrees C. The layer of thick tiles is positioned with a gap of constant width separating every tile while a layer of thin tiles is positioned close-packed adjacent the thick layer. The alternating rows of tiles are offset slightly from one another while being fully abutted, to prevent the formation of a four-corner seam junction. The tiles are aligned to have coincident crystalline orientations. The tiles are aligned to have differing crystal orientations and form seams resulting in specific grain boundaries. Preferred Components: The electrodes comprise highly doped silicon. The tiles comprise monocrystalline material. The specific grain boundaries comprise stable low-energy grain boundaries. The seed layer comprises: monocrystalline silicon; length and width of 600-1000 mm; and a thickness of 2-50 mm. EXAMPLE - No suitable example given.