NOVELTY - Laminated thin film solar cell comprises a glass substrate, a lower electrode layer, a lower sub-cell layer, a middle layer, an upper sub-cell layer and an upper electrode layer.    USE - Laminated thin film solar cell.    ADVANTAGE - The laminated thin film solar cell uses material of different forbidden band width for preparing two sub-cells of the upper sub-cell layer and the lower sub-cell layer, thus widening the range of spectral absorption, improving the photoelectric translating efficiency effectively and lowering the production cost.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation of laminated thin film solar cell, which involves:    (A) preparing transparent conductive oxide film layer (TCO) on a glass substrate by adopting on line catalytical vapor decomposition method for forming a lower electrode layer;    (B) depositing a p-type non-crystalline silicon layer, intrinsic amorphous silicon layer and a N-type non-crystalline silicon layer by adopting plasma enhancing chemical vapor deposition (PECVD) method, above the lower electrode layer, in a vacuum chamber, where the vacuum is more than 10-6 torrs and the substrate temperature is 200-250 degrees C and the reflecting pressure is 600-1000 millitorrs;    (C) preparing a zinc oxide layer as a middle layer by adopting PECVD method, above the lower sub-cell layer, in the condition of the substrate temperature of 200-300 degrees C and the reflecting pressure is 600-800 millitorrs, using organic zinc compounds and nitrogen monoxide as a source gas;    (D) preparing a p-type micro-crystal silicon layer, a multi-crystal silicon layer, and a N-type multi-crystal silicon layer for forming an upper sub-cell layer by adopting plasma enhancing chemical vapor deposition (PECVD) method, above the zinc oxide middle layer, in the condition of the substrate temperature of 200-300 degrees C and the reflecting pressure is 500-800 millitorrs, and the radio frequency power is 13.56 megahertz, using silicon tetrachloride and hydrogen as a source gas; and    (E) preparing a zinc oxide/aluminum electrode layer by adopting a magnetron sputtering method, above the upper sub-cell layer.