NOVELTY - The method comprises converting (202) a metallurgical grade silicon to silicon intermediate compounds by reaction with hydrogen halides, purifying the silicon intermediate compounds to form silicon intermediate compounds of approximately 99.5% purity and greater, generating a plasma stream in a thermal plasma source, injecting the purified silicon intermediate compounds in liquid and/or gaseous form into the thermal plasma source, injecting hydrogen into the thermal plasma source, and depositing polycrystalline silicon film on the surface of substrate located proximate to the plasma source.    USE - The method is useful for forming polycrystalline silicon and silicon-germanium solar cell or photovoltaic device.    ADVANTAGE - The method is capable of large scale production of low cost solar cell or photovoltaic device with high efficiency, reliability and performance.    DETAILED DESCRIPTION - The method comprises converting (202) a metallurgical grade silicon to silicon intermediate compounds by reaction with hydrogen halides, purifying the silicon intermediate compounds to form silicon intermediate compounds of approximately 99.5% purity and greater, generating a plasma stream in a thermal plasma source, injecting the purified silicon intermediate compounds in liquid and/or gaseous form into the thermal plasma source, injecting hydrogen into the thermal plasma source, and depositing a polycrystalline silicon film on the surface of substrates located proximate to the plasma source. Hydrogen is incorporated into the polycrystalline silicon film to promote passivation of silicon grains formed in the polycrystalline silicon film. The silicon intermediate compounds are thermally processed with hydrogen to form a polycrystalline silicon film directly on the substrate to promote enhanced grain quality of the polycrystalline silicon film. The plasma stream includes hydrogen. An INDEPENDENT CLAIM is included for a system for manufacturing a solar cell or photovoltaic device.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method for producing silicon solar cell.    Reduction of quartz with carbon (201)    Conversion of metallurgical grade silicon to intermediate compounds (202)    Purification of intermediate compounds (203)    Formation of polycrystalline film by thermal processing (204)    Subsequent processing of polycrystalline film. (205)