NOVELTY - Solar cell system (500) comprises first electrode two doped semiconductor layers with different dopant content; semiconductor-enriched insulator (530) over the second material; second electrode (542 and 544) partially covering the semiconductor-enriched insulator and leaving one region of the semiconductor-enriched insulator uncovered; circuitry connected with the first and second electrodes; and where electromagnetic radiation reaches the regions of the semiconductor-enriched insulator to generate voltage within the circuitry and power the device.    USE - As solar cell system for powering a device using electromagnetic radiation (claimed).    ADVANTAGE - The semiconductor-enriched insulative material functions similarly to a p-i-n diode (where i is an intrinsic or undoped layer of semiconductor), or a metal-insulator-semiconductor diode, or a metal-semiconductor diode. Since there is no p-n junction, the diode can have intrinsic advantages relative to prior art diodes for e.g. scalability, very low leakage and therefore low power, high quantum efficiency, low noise, and fast response time (greater than 10-10 seconds) similar to metal-semiconductor diodes. Additionally, high density and low temperature processing can provide potential low costs. The solar cells are amenable to low-temperature processing (i.e. can be formed utilizing processing from room temperature to about 300 degrees C) which can provide higher efficiency and cost reduction relative to high-temperature processes. The heavily-doped interface layer can reduce series contact resistance and enhance light absorption.    DETAILED DESCRIPTION - Solar cell system (500) for powering a device using electromagnetic radiation, comprises: a first electrode; a first material over the first electrode, the first material being semiconductor material doped to a first dopant type; a second material over the first material; the second material being doped to the first dopant type, and having a lower concentration of dopant than the first material; a semiconductor-enriched insulator (530) over the second material; a second electrode (542 and 544) partially covering the semiconductor-enriched insulator and leaving at least one region of the semiconductor-enriched insulator uncovered; circuitry connected with the first and second electrodes; and where electromagnetic radiation reaches the regions of the semiconductor-enriched insulator to generate voltage within the circuitry and power the device. The solar cell system comprises a layer consisting essentially of indium tin oxide between the semiconductor-enriched insulator and the second electrode, the layer consisting essentially of indium tin oxide being in direct physical contact with both the semiconductor-enriched insulator and the second electrode.    DESCRIPTION OF DRAWING(S) - The figure shows a diagrammatic, cross-sectional, fragmentary view of a solar cell.    Solar cell system (500)    Semiconductor material (518,520)    Semiconductor-enriched insulator (530)    Antireflective material (540)    Second electrode (542 and 544)