TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: In the solar photovoltaic device, the band gap of the current collection layer is larger than or equal to that of the window layer. The material of the current collection layer comprises gallium phosphide (GaP), aluminum nitride (AlN), aluminum indium phosphide (AlInP), ITO, zinc phosphide (ZnP), IZO, AZO, GZO, or zinc oxide (ZnO). The current collection layer comprises a transparent conductive layer. The material of the transparent conductive layer comprises ITO, ZnP, IZO, AZO, GZO, or ZnO. The reflectivity of the current collection layer is less than 40%. The doping of the current collection layer is n-type and the dopant of the current collection layer comprises silicon (Si), tellurium (Te), antimony (Sb), or germanium (Ge). The doping of the current collection layer is p-type and the dopant of the current collection layer comprises carbon (C), magnesium (Mg), or zinc (Zn). The pattern of the patterned structure is selected from a group consisting of grid, stripe, and finger. It further comprises: a patterned front contact located on parts of the current collection layer and the window layer; and a cap layer located between the current collection layer and the patterned front contact and between the window layer and the patterned front contact. The current collection layer is etched to form a pattern different from that of the patterned front contact. It further comprises an anti-reflective layer located on the surface of the current collection layer. The ratio of the openings area of the current collection layer is between 0.3 and 0.7. The thickness of the current collection layer is between 200 Angstrom and 8000 Angstrom . It further comprises a transparent conductive layer located on the current collection layer. It further comprises an anti-reflective layer located on the transparent conductive layer. The transparent conductive layer and the current collection layer comprise the same or different patterned structures. The ratio of the openings area of the patterned structures is between 0.3 and 0.7. It further comprises: a patterned front contact located on parts of the current collection layer and the transparent conductive layer; and a cap layer located between the current collection layer and the patterned front contact and between the window layer and the patterned front contact. The resistance of the current collection layer is lower than that of the window layer.