NOVELTY - The photoelectric conversion device having a laminated structure, comprises an anodized substrate (10) constituted of a metal substrate containing aluminum as a main component and an anodized film formed on the surface of the metal substrate, a lower electrode (20), which is formed above the anodized substrate and contains molybdenum as a main component, a photoelectric conversion layer (30), an upper electrode (50) formed above the photoelectric conversion layer, a metal supply layer (60), and a diffusion barrier layer (70).    USE - The photoelectric conversion device is useful in solar cell (claimed) and infrared sensors.    ADVANTAGE - The photoelectric conversion device is lightweight and flexible, and can be economically manufactured with high optical absorptance, high energy conversion efficiency and high durability and without distortion such as film exfoliation and microcracking.    DETAILED DESCRIPTION - The photoelectric conversion device having a laminated structure includes an anodized substrate (10)constituted by a metal substrate containing aluminum as a main component and an anodized film formed on the surface of the metal substrate, a lower electrode (20), which is formed above the anodized substrate and contains molybdenum as a main component, a photoelectric conversion layer (30), an upper electrode (50) formed above the photoelectric conversion layer, a metal supply layer (60), and a diffusion barrier layer (70). The photoelectric conversion layer is formed of a semiconductor material above the lower electrode, and generates electric current when the photoelectric conversion layer absorbs light. The metal supply layer, which is formed in contact with or inside the lower electrode, contains sodium, alkali metal salts and alkaline earth metal salts of polyacids including heteropoly acids, and supplies the alkali metal elements and alkaline earth metal elements to the photoelectric conversion layer during formation of the photoelectric conversion layer. The diffusion barrier layer, which is conductive and formed between the anodized substrate and the metal supply layer in contact with the lower electrode and the metal supply layer or inside the lower electrode, and suppresses diffusion of the alkali metal elements and alkaline earth metal elements contained in the metal supply layer into the anodized substrate. The main component of the photoelectric conversion layer is a semiconductor compound having a chalcopyrite structure, where the compound is composed of group Ib elements, IIIb elements and VIb elements.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of a photoelectric conversion device.    Anodized substrate (10)    Lower electrode (20)    Photoelectric conversion layer (30)    Upper electrode (50)    Metal supply layer (60)    Diffusion barrier layer. (70)