NOVELTY - A solar cell is fabricated by fabricating multilayer (120) by repeatedly stacking matrix layers formed of semiconductor nitride or semiconductor oxide, and semiconductor layers; fabricating quantum dot (132) nanowire array constituted by quantum dot nanowires (130) whose one ends are fixed on semiconductor substrate; depositing semiconductor doped with opposite-type impurities to impurities of semiconductor substrate; and forming lower electrode on lower part of semiconductor substrate, and forming upper electrode (151) on upper part surface.    USE - Method for fabricating solar cell.    ADVANTAGE - The method fabricates a high efficiency solar cell through a simple and economical process. The wavelength of absorbing light can be easily controlled by controlling thickness of semiconductor layer of stacked thin film, the sort of matrix, and the contracted diameter of quantum dot nanowire, and pair of electron/hole can be generated by absorbing light in wide spectral region from infrared rays to visible rays.    DETAILED DESCRIPTION - The solar cell is fabricated by:    (A) fabricating multilayer (120) by repeatedly stacking matrix layers formed of semiconductor nitride or semiconductor oxide, and semiconductor layers (110, 140) on upper part of semiconductor substrate doped with p-type or n-type impurities;    (B) fabricating quantum dot (132) nanowire array constituted by quantum dot nanowires (130) whose one ends are fixed on semiconductor substrate and are spaced from each other to be vertically arranged by partially etching multilayer vertically to semiconductor substrate;    (C) depositing semiconductor doped with opposite-type impurities to impurities of semiconductor substrate on upper part of semiconductor substrate formed with quantum dot nanowire array and filling at least empty spaces between other ends of quantum dot nanowires and semiconductor substrate with semiconductor doped with opposite-type impurities; and    (D) forming lower electrode on lower part of semiconductor substrate, and forming upper electrode (151) on upper part surface formed with quantum dot nanowire arrays and semiconductor surface doped with opposite-type impurities or on upper part of semiconductor surface doped with opposite-type impurities so that upper electrode corresponds to lower electrode.    An INDEPENDENT CLAIM is included for a solar cell comprising lower electrode; first semiconductor layer formed on upper part of lower electrode and doped with n-type or p-type impurities; second semiconductor layer formed over first semiconductor layer; upper electrode formed on an upper part of the semiconductor layer; and quantum dot nanowire array.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic view showing a method for fabricating solar cell.    Semiconductor layers (110, 140)    Multilayer (120)    Quantum dot nanowires (130)    Quantum dot (132)    Upper electrode (151)