NOVELTY - Fabricating zinc oxide (ZnO) film having matching crystal orientation to silicon substrate (21), involves obtaining a silicon substrate having (111) crystal orientation, obtaining an aluminum nitride thin layer (22) after high temperature epitaxy through metal-organic chemical vapor deposition (MOCVD) to obtain multi-layered thin film of aluminum nitride/silicon, Where, through the epitaxies at high and low temperatures, layers of high temperature-/low temperature-zinc oxide obtain a matching single-crystal lattice to the silicon substrate.    USE - For fabricating zinc oxide film (claimed), used for ultraviolet light-emitting diodes, solar cells and laser devices.    ADVANTAGE - The zinc oxide layers has crystal lattice fully matched to that of the silicon substrate. Thus, high-quality zinc oxide thin film is obtained, is easy to produce and low cost.    DETAILED DESCRIPTION - Fabricating zinc oxide (ZnO) film having a matching crystal orientation to a silicon substrate (21), involves obtaining a silicon substrate having (111) crystal orientation, filling in a carrier gas, and running a thermal etching process on the silicon substrate by using hydrochloric acid gas; filling in a carrier gas, transferring a III-group feedstock gas having aluminum (Al) and vanadium (V)-group feedstock gas having nitrogen (N2) to the silicon substrate obtained after the thermal etching process, and obtaining aluminum nitride thin layer (22) after a high temperature epitaxy through metal-organic chemical vapor deposition (MOCVD) to obtain multi-layered thin film of aluminum nitride/silicon (AlN/Si) (111); filling in a carrier gas, transferring a III-group feedstock gas having Al and gallium (Ga) and V-group feed stock gas having N2 onto the AlN/Si(111) thin film, and obtaining aluminum gallium nitride (AlGaN) thin layer (23) after a high temperature epitaxy through MOCVD to obtain a multi-layered thin film of AlGaN/AlN/Si(111); filling in a carrier gas, transferring a III-group feedstock gas having Ga and V-group feedstock gas having N2 onto the AlGaN/AlN/Si (111) thin film, and obtaining gallium nitride thin layer (24) (GaN) after a high temperature epitaxy through MOCVD to obtain a multi-layered thin film of GaN/AlGaN/AlN/Si(111); filling in a carrier gas, transferring a III-group feedstock gas having In and Ga and V-group feedstock gas having N2 to the GaN/AlGaN/AlN/Si (111) thin film, and obtaining an InxGa1-xN thin layer after a high temperature epitaxy through MOCVD to obtain a multi-layered thin film of InxGa1-xN/GaN/AlGaN/AlN/Si(111); filling in a carrier gas, transferring chemical-reaction feedstock gases onto the InxGa1-xN/GaN/AlGaN/AlN/Si (111) thin film, and obtaining low temperature zinc oxide (LT-ZnO) thin layer (26) after an epitaxy through MOCVD at 150-200 degrees C to obtain multi-layered thin film of LT-ZnO/InxGa1-xN/GaN/AlGaN/AlN/Si(111); putting the LT-ZnO/InxGa1-xN/GaN/AlGaN/AlN/Si(111) thin film into a furnace to run a thermal treatment at a high temperature with a carrier gas; and filling in a carrier gas, transferring chemical-reaction feedstock gases onto the LT-ZnO/InxGa1-xN/GaN/AlGaN/AlN/Si(111) thin film obtained after the thermal treatment, and obtaining high temperature zinc oxide (HT-ZnO) thin layer (27) after an epitaxy through MOCVD at 600-650 degrees C to obtain a multi-layered thin film of HT-ZnO/LT-ZnO/InxGa1-xN/GaN/AlGaN/AlN/Si(111), Where, through the epitaxies at high and low temperatures, layers of HT-ZnO/LT-ZnO obtain a matching single-crystal lattice to the silicon substrate.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of structures during fabrication.    Silicon substrate (21)    Aluminum nitride thin layer (22)    Aluminum gallium nitride thin layer (23)    Gallium nitride thin layer (24)    Low temperature zinc oxide thin layer (26)    High temperature zinc oxide thin layer (27)