NOVELTY - The method comprises partially immersing an area (5) of a flat semiconductor substrate (1) to be metallized into a metallization solution (9) that is present in a metallization bath (8), where the substrate has a first side (2) and a second side (3) opposite to the first side, superimposing the area to be metallized with a magnetic field, and galvanically depositing a metal in the area to be metallized. The magnetic field has an inhomogeneous component and/or homogeneous component. The magnetic field in the metallizing solution has gradients in sections directed to the area to be metallized.    USE - Method for galvanic metallization of semiconductor component such as solar cell.    ADVANTAGE - The method is capable of efficiently metallizing the semiconductor component with high quality, and drastically reduces the contact resistance of the solar cell.    DETAILED DESCRIPTION - The method comprises partially immersing an area (5) of a flat semiconductor substrate (1) to be metallized into a metallization solution (9) that is present in a metallization bath (8), where the substrate has a first side (2) and a second side (3) opposite to the first side, superimposing the area to be metallized with a magnetic field, and galvanically depositing a metal in the area to be metallized. The magnetic field has an inhomogeneous component and/or homogeneous component. The magnetic field in the metallizing solution has gradients in sections directed to the area to be metallized. The homogeneous component is directed parallel to the sides of the semiconductor substrate. A neodymium-iron-boron-magnet is arranged at one of the sides of the semiconductor substrate for generating magnetic fields, and an electromagnet is provided for generating magnetic fields. The sides of the semiconductor substrate are provided with a mask before immersing into the solution. The area to be metallized in the direction parallel to the sides of the substrate has a width of less than 20 mu m. The area to be metallized is coated with a diffusion barrier layer made of ferromagnetic material such as cobalt, nickel and/or its alloy before galvanic deposition. An electroless deposition is provided for coating the area with the diffusion barrier layer. The area is provided with a seed layer made of palladium before coating. A galvanic deposition is provided for introducing the diffusion barrier layer to the seed layer.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of a device for galvanic metallization of semiconductor component.    Semiconductor substrate (1)    First side (2)    Second side (3)    Area to be metallized (5)    Metallization bath (8)    Metallization solution. (9)