TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Structure: In the solar cell component structure, the n-type semiconductor layer is cadmium sulfide, zinc sulfide or indium sulfide. The thickness of n-type semiconductor layer is within 1-1000nm. The high resistance film layer is overlapped and contacted between the n-type semiconductor layer and the auxiliary electrode layer, or between the n-type semiconductor layer and the transparent conductive layer. The high resistance film layer comprises metallic oxide. The metallic oxide is selected from molybdenum oxide, vanadium oxide, tungsten oxide, copper oxide, ferric oxide, tin oxide, titanium oxide, zinc oxide, zirconium oxide, lanthanum oxide, niobium oxide, indium tin oxide, strontium oxide, cadmium oxide, indium oxide, the mixtures, the alloys or the compounds. The high resistance film comprises an insulating material capable of causing the capacitance effect. The insulating material is silicon or alumina. The high resistance film layer comprises metallic nitride. The thickness of high resistance film layer is within 25-2000 Angstrom . The transparent conductive layer is at least one selected from indium tin oxide, indium titanium oxide, indium zinc oxide, aluminum zinc oxide, gallium zinc oxide, aluminum gallium zinc oxide, cadmium tin oxide, zinc oxide and zirconium dioxide. The metal layer comprises molybdenum, chromium, vanadium or tungsten. The substrate is a glass substrate, a plastic flexible panel, a stainless steel, molybdenum, copper, titanium, aluminum metal panel or a metal foil. The auxiliary electrode layer comprises multiple narrow strip-shaped metal bands or slender strap-shaped patterns or arbitrary geometric figures, the covering area is 0.01-10% of the effective area of solar cell component. The auxiliary layer is silver, tin, indium, zinc, aluminum, copper or the alloys, or the graphical low resistance metal. It also comprises: a substrate; a metal layer, having multiple p-type electrode units separated from each other, formed on the surface of substrate; a high resistance film layer, formed on the surface of metal layer; a p-type semiconductor layer, formed on the surface of high resistance film layer; an n-type semiconductor layer, formed on the surface of p-type semiconductor layer; an auxiliary electrode layer, formed on the high resistance film layer and the surfaces of multiple p-type electrode units; and a transparent conductive layer, formed on the auxiliary electrode layer, the high resistance film layer and the surfaces of the multiple p-type electrode units, where at least one cell unit is formed on respective p-type electrode, the cell units are connected in series via the auxiliary electrode layer and the transparent conductive layer. The n-type semiconductor layer is cadmium sulfide, zinc sulfide or indium sulfide. The thickness of n-type semiconductor layer is within 1-1000nm. The high resistance film layer is overlapped and contacted between the n-type semiconductor layer and the auxiliary electrode layer, or between the n-type semiconductor layer and the transparent conductive layer. The high resistance film layer comprises metallic oxide. The metallic oxide is selected from molybdenum oxide, vanadium oxide, tungsten oxide, copper oxide, ferric oxide, tin oxide, titanium oxide, zinc oxide, zirconium oxide, lanthanum oxide, niobium oxide, indium tin oxide, strontium oxide, cadmium oxide, indium oxide, the mixtures, the alloys or the compounds. The high resistance film comprises an insulating material capable of causing the capacitance effect. The insulating material is silicon or alumina. The high resistance film layer comprises metallic nitride. The thickness of high resistance film layer is within 25-2000 Angstrom . The transparent conductive layer is at least one selected from indium tin oxide, indium titanium oxide, indium zinc oxide, aluminum zinc oxide, gallium zinc oxide, aluminum gallium zinc oxide, cadmium tin oxide, zinc oxide and zirconium dioxide. The metal layer comprises molybdenum, chromium, vanadium or tungsten. The substrate is a glass substrate, a plastic flexible panel, a stainless steel, molybdenum, copper, titanium, aluminum metal panel or a metal foil. The auxiliary electrode layer comprises multiple narrow strip-shaped metal bands or slender strap-shaped patterns or arbitrary geometric figures, the covering area is 0.01-10% of the effective area of solar cell component. The auxiliary layer is silver, tin, indium, zinc, aluminum, copper or the alloys, or the graphical low resistance metal. Preferred Method: Fabricating solar cell component structure further comprises a step of forming a high resistance film layer on the surface of n-type semiconductor layer. The auxiliary electrode layer is arranged on the surface of high resistance film layer, and the transparent conductive layer is arranged on the surface of high resistance film layer. It further comprises a step of forming a high resistance film layer on the surface of metal layer. The p-type semiconductor layer is arranged on the surface of high resistance film layer. The auxiliary electrode layer is formed by using mask evaporation, mask sputtering, metal etching or screen printing. The multiple p-type electrode units are formed by using wet etching, dry etching or laser cutting. The auxiliary electrode layer is at least one of silver, tin, indium, zinc, aluminum and copper, or the alloy of at least two of the same, or the graphical low resistance metal. The auxiliary electrode layer comprises multiple narrow strip-shaped metal bands or slender strap-shaped patterns or arbitrary geometric figures, the covering area is 0.01-10% of the effective area of solar cell component. It further comprises a step of cutting the overlapped layer above the metal layer, so as to expose the multiple p-type electrode unit from multiple separating grooves.