NOVELTY - The solar cell comprises a n-doped silicon substrate, which has a first main surface that serves as a light incidence side when used and a second main surface that serves as a back side, a large-surface n+ doped base region (front surface field) provided in the first main surface, a large-surface p+ doped emitter region provided in the second main surface, a finger-type base contact structure applied to the first main surface, an emitter contact structure applied to the second main surface, and base contact paths applied to the second surface and having solder contact surfaces.    USE - Used as a solar cell.    ADVANTAGE - The solar cell can be simply and economically produced with high quality, and provides high light intensity.    DETAILED DESCRIPTION - The solar cell comprises a n-doped silicon substrate, which has a first main surface that serves as a light incidence side when used and a second main surface that serves as a back side, a large-surface n+ doped base region (front surface field) provided in the first main surface, a large-surface p+ doped emitter region provided in the second main surface, a finger-type base contact structure applied to the first main surface, an emitter contact structure applied to the second main surface, base contact paths applied to the second surface and having solder contact surfaces, and interconnections and vias connecting the finger-type contact structure of the first main surface to the base contact paths on the second main surface. The emitter region and the base region are connected via the solder contact surfaces on the second main surface. The second main surface is free from p+ emitter dopant in some sections in the regions of the base contact paths. The first main surface and predetermined regions of the second main surface around the vias have n+ n-transition and a front surface field. Narrow regions on the second main surface represent a dopant cavity between the base region and emitter region surrounding the base region, and have basic dopant of the starting material, so that no retroactive insulating measurement is required for separating the highly-doped regions. The n+ dopant of the first main surface is formed with phosphorus and the p+ dopant of the second main surface is formed with aluminum. The n+ dopant in the first main surface under fingers of the finger-like structure is higher than between the fingers. A complete thin-film aluminum layer is provided on the second main surface for local or large-surface contact of the emitter and has recesses provided in regions for the base-contact. A complete dielectric cover layer is provided between the second main surface and the thin-film aluminum layer and is provided with openings at several contact points and in all regions with n+ n-transition, where the openings around the vias are smaller than the n+ n-regions. The metallized n+n regions present in the second main surface are formed as two related busbar strips over the total wafer length or small sections with a distance from each other in a dimension of finger distances of the contact structure on the first main surface. The recesses in the dielectric layer are formed on the second main surface in the n+ n-transition regions below the base contact surfaces in congruent to form the recesses in the emitter region formed by aluminum doping and in the superficial metal layer, but smaller than either. The finger-like contact structure on the first main surface is penetratively formed from silver-containing screen printing paste or aerosol printing inks and by firing an anti-reflective coating. An INDEPENDENT CLAIM is included for a method for producing a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of a method of saw-damage etching and rolling circle amplification-cleaning of the wafer surfaces.