NOVELTY - The process comprises depositing a first film onto a back surface portion of a back surface (109B) of the continuous substrate using a first sputtering target, depositing a second film over a front surface portion of a front surface (109A) of the continuous substrate using a second sputtering target, and depositing a third film onto the second film and onto the pair of exposed front surface portions using a third sputtering target formed by the pair of edge regions by depositing across an entire width of the front surface portion. The back surface portion includes an entire width.    USE - The process is useful for sputter depositing films on a back surface and a front surface of a continuous substrate advanced in a process direction through a deposition chamber for manufacturing copper indium gallium selenide solar cells such as photovoltaic devices.    ADVANTAGE - The process is capable of easily and reliably depositing films on the back surface and the front surface of the continuous substrate with high-throughput and improved quality of the film and without causing any contamination thus effectively producing cost-effective solar cells.    DETAILED DESCRIPTION - The process comprises depositing a first film onto a back surface portion of a back surface (109B) of the continuous substrate using a first sputtering target, depositing a second film over a front surface portion of a front surface (109A) of the continuous substrate using a second sputtering target, and depositing a third film onto the second film and onto the pair of exposed front surface portions using a third sputtering target formed by the pair of edge regions by depositing across an entire width of the front surface portion. The back surface portion includes an entire width. The first sputtering target is disposed across from the back surface portion of the continuous substrate as the continuous substrate is advanced in the process direction past the first sputtering target. The second film is shaped as a central region that is not disposed over a pair of edge regions of the front surface portion along the width of the front surface. The second sputtering targets are disposed across from the front surface portion of the continuous substrate as the continuous substrate is advanced in the process direction past the second sputtering target, and occur while a corresponding back surface portion is supported and cooled by a cooling surface of a cooling mechanism as the continuous substrate is moved along the process direction past the second sputtering target. The third sputtering target is disposed across from the front surface portion of the continuous substrate. The deposition of the third film occurs while the continuous substrate is advanced in the process direction past the third sputtering target, after removed from contact with the cooling surface of the cooling mechanism. The method further comprises depositing a fourth film over the third film using a fourth sputtering target disposed across from the front surface portion of the continuous substrate. The deposition of the fourth film occurs while the continuous substrate is advanced in the process direction past the fourth sputtering target and while still is removed from contact with the cooling surface of the cooling mechanism. Each of the second sputtering targets deposits some of the second film. The cooling mechanism is a drum that rotates about an axis that is transverse to the process direction. The cooling surface is a peripheral surface of the drum. The drum is cooled by a fluid provided for transfer of heat from the continuous substrate to the drum while the depositing of the second film using the second sputtering target occurs. An INDEPENDENT CLAIM is included for a system to deposit films on a back surface and a front surface of a continuous substrate in a process direction.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a system to deposit conductive materials over a full front and back surface of a continuous flexible substrate.    First deposition station (102)    Second deposition station (104)    Third deposition station (106)    Front surface (109A)    Back surface. (109B)