TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electrodeposition solution further comprises: a grain refiner including one of chloride, pyrophosphate and sulfite; and a conductivity improving agent including ammonium sulfate. Preferred Components: The group IB material source comprises a copper source and the group VIA material comprises a selenium source. The copper source of copper ions comprises at least one of dissolved copper metal and dissolved copper salts, where the copper salts include copper-chloride, copper-sulfate, copper acetate, copper-oxide, copper-hydroxide, copper-nitrate, copper-phosphate, copper-tetrafluoroborate, copper-citrate, copper-gluconate, copper-sulfamate or copper-carbonate. The selenium material source comprises at least one of dissolved elemental selenium, acids of selenium and dissolved selenium compounds, where the selenium compounds include oxides, chlorides, sulfates, nitrates, perchlorides or phosphates of selenium. The complexing agent includes at least one of a carboxylate functional group and an amine functional group. The complexing agent comprises one of an acid and an alkali metal salt of the acid and an ammonium salt of the acid, where the acid comprises one of tartaric acid, citric acid, acetic acid, malonic acid, malic acid, succinic acid, ethylenediamine (EN), ethylenediaminetetraacetic acid (EDTA), nitrilotriacetic acid (NTA) or hydroxyethylethylenediaminetriacetic acid (HEDTA). The complexing agent comprises an alkali metal salt of the acid comprising sodium and potassium salts of tartaric acid, citric acid, acetic acid, malonic acid, malic acid, succinic acid, EN, EDTA, NTA or HEDTA. The complexing agent comprises an ammonium salt of the acid, comprising ammonium salts of tartaric acid, citric acid, acetic acid, malonic acid, malic acid, succinic acid, EN, EDTA, NTA or HEDTA. The amount of the complexing agent is 5 mM/l to 0.55 M/l. The conductive layer is one of indium, gallium, selenium copper or their alloys. The copper ion source is copper sulfate pentahydrate, and the selenium ion source is selenium oxide. The copper selenide film has a graded copper composition within the film thickness. The thin film further includes a sodium salt. The group IB material includes copper, and the group IIIA material includes gallium and indium. The amount of the conductivity improving agent is 5 mM/l to 0.55 M/l.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: The step of electrodepositing includes varying electrodeposition current density during the electrodeposition, preferably by pulsing the current density between a high and a low current density for desirable time intervals to electrodeposit laminated selenide films containing different copper concentrations. The step of electrodepositing is performed using one of galvanostatic electrodeposition, potentiostatic electrodeposition or various combinations of current and voltage mode.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The adhesion promoting agent comprises organic compounds with at least one amine functional group and at least one aminopropyl group. The adhesion promoting agent comprises 1,4-bis(3-aminopropyl)piperazine and/or N,N'-bis(3-aminopropyl)ethylenediamine. The amount of the adhesion promoting agent is 1-40 mM/l. The corrosion inhibitor comprises a multihydric alcohol. The corrosion inhibitor is glycerol. The amount of the corrosion inhibitor is 20-500 mM/l. EXAMPLE - Typical electrodeposition solution comprised (in g/l): copper sulfate pentahydrate (5); sodium citrate (30); sodium sulfate (60); selenious acid (50) and sulfuric acid (sufficient quantity to make pH 2).