NOVELTY - An oxide contains complex oxide of yttrium, dysprosium, lutetium, erbium, ytterbium, thulium, holmium, scandium and/or indium, and manganese, iron, cobalt and/or gallium.    USE - Oxide is used for electric conductor, n-type semiconductor and p-type semiconductor (both claimed). Uses include but are not limited to current control element, voltage signal memory element, dielectric material element, optical sensing element, solar cell, etc.    ADVANTAGE - The oxide provides electrical conductor with favorable electrical characteristics, magnetic characteristics, optical characteristics, and electric conduction characteristics, and is free from toxic substance.    DETAILED DESCRIPTION - An oxide has compositional formula: (RM2O4)m(RMO3)n.    R=yttrium, dysprosium, lutetium, erbium, ytterbium, thulium, holmium, scandium and/or indium;    M=manganese, iron, cobalt and/or gallium;    m=1 or 2;and    n=0 or more.    A portion of R is subjected to solid solution substitution by positive divalent or lower element (E1), or positive quadrivalent or higher element (E2). INDEPENDENT CLAIMS are included for the following:    (1) manufacture of oxide. At least one carbonate and oxide of calcium, strontium, barium and/or zinc, or cerium, titanium, zirconium, hafnium, tin, tantalum, antimony and/or rhenium, at least one carbonate and oxide of yttrium, dysprosium, lutetium, erbium, ytterbium, thulium, holmium, scandium and/or indium, and at least one carbonate and oxide of manganese, iron, cobalt and/or gallium are mixed to obtain raw material powder. The raw material powder is pressurized in atmosphere under oxygen partial pressure of 10-6-10-11, baked by heating, and cooled to obtain oxide; and    (2) method for controlling electrical property of oxide by solid solution substitution of by positive divalent or lower element (E1), or positive quadrivalent or higher element (E2).    DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating control method of electric physical property of electric conductor. (Drawing includes non-English language text)    Regulation amount of element (S1)    Changing of electric conductivity (S2)