NOVELTY - Producing multicrystalline silicon ingots by induction method, comprises: charging and start-up heating lump silicon charge material within melting space of water-cooled crucible; creating bath of molten silicon; subsequently melting and casting molten silicon to shape of melting space; crystallizing multicrystalline silicon ingot; controllably cooling silicon ingot; terminating steps of melting and casting when content of impurities in molten silicon becomes critical; and repeating process steps starting from steps of charging and start-up heating lump silicon charge material.    USE - The method is useful for producing multicrystalline silicon ingots using induction method (claimed), which is useful for the production of solar cells.    ADVANTAGE - The method provides: increased output of multicrystalline silicon; and increased production capacity for obtaining multicrystalline silicon ingots. The method is capable of processing batches with a high content of impurities.    DETAILED DESCRIPTION - Producing multicrystalline silicon ingots by the induction method, comprises: charging and start-up heating a lump silicon charge material in a controlled atmosphere on a movable bottom within the melting space of a water-cooled crucible; creating a bath of molten silicon; subsequently melting and casting the molten silicon to the shape of the melting space; crystallizing a multicrystalline silicon ingot; controllably cooling the silicon ingot using a heating equipment set; terminating the steps of melting and casting when the content of impurities in the molten silicon becomes critical; and repeating the process steps starting from the steps of charging and start-up heating the lump silicon charge material, where: upon terminating the steps of melting and casting, the step of crystallizing the remaining part of the multicrystalline silicon ingot is finished as the whole ingot is controllably cooled; upon completion of crystallization, the multicrystalline silicon ingot is removed together with the movable bottom and the heating equipment set and further cooled in a controllable manner; at the same time, another heating equipment set including another movable bottom is supplied to the vacated space; then the another movable bottom is moved into the water-cooled crucible; and the process steps are repeated in order to produce the next ingot. An INDEPENDENT CLAIM is also included for an apparatus for producing multicrystalline silicon ingots by the induction method, comprising a chamber (1) connected to a charge bin (2), where: the chamber comprises a water-cooled crucible (3) enveloped by an inductor (4), a device (7) for start-up heating a lump silicon charge material, and a movable bottom with a rod connected to a movement means, as well as a controlled cooling compartment arranged underneath the water-cooled crucible and a heating equipment set; the movable bottom is movable up and down along the heating equipment set, and further comprises a platform installed in the controlled cooling compartment and is capable of rotation about the axis on which the heating equipment set is mounted; and the apparatus further comprises at least one heating equipment set installed on the platform and another movable bottom arranged in the another heating equipment set together with a rod connected to a suitable movement means for it.    DESCRIPTION OF DRAWING(S) - The figure shows the apparatus at a start-up heating step.    Chamber (1)    Charging bin (2)    Water-cooled crucible (3)    Inductor (4)    Start-up heating device (7)