TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: In forming a single-junction photovoltaic cell, the dopant layer comprises zinc. The metal layer comprises nickel. The metal layer is greater than about 2 microns thick. Forming the metal layer comprises electroplating. The semiconductor substrate comprises gallium arsenide having a 110 surface crystallization orientation. The semiconductor layer is under a compressive strain, the compressive strain being induced by the tensile stress in the metal layer. It further comprises forming a seed layer on the doped layer before formation of the metal layer. The seed layer comprises titanium, and the seed layer is configured to act as an etch stop layer during formation of the single junction photovoltaic cell using the semiconductor layer. It further comprises forming a seed layer on the dopant layer before diffusing the dopant layer. Removing the semiconductor layer from the semiconductor substrate at the fracture comprises adhering a handle layer to the metal layer, the handle layer comprising one of a membrane of plastic, polymer, glass, or metal, or an adhesive tape. The semiconductor layer is less than about 50 microns thick. Forming the single-junction photovoltaic cell using the semiconductor layer comprises: forming an ohmic contact layer on the semiconductor layer; and forming a handling substrate layer over the ohmic contact layer, the handling substrate comprising a conductive material comprising one of a metallic foil, glass, or ceramic material. Forming the single-junction photovoltaic cell using the semiconductor layer further comprises: removing the metal layer; and forming a patterned conducting layer on a surface of the doped layer opposite the semiconductor layer. Preferred Cell: In the cell, the dopant comprises zinc. It further comprises a handling substrate layer located over the ohmic contact layer, the handling substrate comprising a conductive material comprising one of a metallic foil, glass, or ceramic material. The semiconductor substrate comprises gallium arsenide (GaAs) having a 110 surface crystallization orientation. The semiconductor layer is under a compressive strain. The semiconductor layer is less than about 50 microns thick.