TECHNOLOGY FOCUS - MECHANICAL ENGINEERING - Preferred Method: In manufacturing the thin film photoelectric conversion module, the front surface electrode layer (3) is a tin oxide (SnO2) film, particularly formed on the main surface of the glass substrate (2). Forming of the thin film photoelectric conversion unit (4) is a laminating of the thin film photoelectric conversion unit (4) on the glass substrate (2) with the front surface electrode layer (3). Scribing of the thin film photoelectric conversion unit (4), particularly any scribing step in the method, is carried out by using a YAG laser. The back surface electrode layer (5) is a metal layer. The forming of the back surface electrode layer (5) is carried out by successively forming a zinc oxide (ZnO) film and a silver (Ag) film on the thin film photoelectric conversion unit (4), where the ZnO film has a thickness of 90 nm and the Ag film has a thickness of 300 nm. The back surface electrode layer (5) is formed by using a sputtering method. The forming of the back surface electrode layer (5) is a laminating of the back surface electrode layer (5) on the glass substrate (2) with the front surface electrode layer (3) and the thin film photoelectric conversion unit (4). The scribing of the back surface electrode layer (5) is carried out in a direction parallel to a longer side of the glass substrate (2). The series-connected arrays (11) consist of 50 thin film photoelectric conversion cells (10), where each cell is particularly sized 10 mm x 200 mm. The method further comprises: laminating a fluorocarbon resin-series sheet on the surface of the substrate (2) on which the series-connected arrays (11) were formed, where an ethylene vinyl acetate (EVA) layer is interposed between the series-connected arrays (11) and the fluorocarbon resin-series sheet. The shorter side of the glass substrate is orthogonal to the longer side of the glass substrate. The short-circuit of the thin film photoelectric conversion module is not lower than 1 Angstrom under conditions that a xenon lamp is used as a light source, irradiance is 100 mW/cm2, air mass is 1.5, and the temperature is 25 degrees C, and the short-circuit current of each of the series-connected arrays (11) is not higher than 600 mA under the same conditions.