NOVELTY - An anti-reflection layer is prepared on silicon sheet by preparing suede, and etching by electrochemistry. The preparation of suede involves selecting industrial monocrystalline silicon piece, and using standard washing method to wash silicon piece; preparing solution; heating crude solution; and heating suede solution. The etching by electrochemistry involves taking of silicon piece and washing with deionized water to make side which is contacted with etching solution be made to antireflection layer.    USE - Method for preparing anti-reflection layer on silicon sheet (claimed) for solar cell.    ADVANTAGE - The silicon sheet with anti-reflection layer can reduce reflection of light, is good for absorption of light, and has excellent promoting function to development of solar cell. The method exhibits low cost, simple and repeatable electrochemistry etching process.    DETAILED DESCRIPTION - The anti-reflection layer is prepared on silicon sheet by preparing suede, and etching by electrochemistry. The preparation of suede involves selecting industrial monocrystalline silicon piece, and using standard washing method to wash silicon piece; preparing solution; heating crude solution; and heating suede solution. The preparation of solution involves preparing 11-13% sodium hydroxide (NaOH) solution at normal pressure and room temperature; preparing suede solution; preparing 2-3% NaOH solution, alcohol (1 mol/L) and 1.5% sodium silicate at normal pressure and room temperature; and mixing solutions with 99% isopropanol (IPA) at vol. ratio of 1:1:1:0.09. The heating of crude solution involves carrying out heating at 83-86 degrees C, and putting washed silicon piece into solution for 2-3.5 minutes to remove mechanical damaged layer and oxidized layer on surface of monocrystalline silicon piece. The heating of suede solution involves carrying out at 75-77 degrees C, and putting silicon piece to solution, reacting for 20-30 minutes to form suede structure. The etching by electrochemistry involves:    (A) preparing saturated salt solution and etching solution at normal pressure and room temperature;    (B) mixing etching solution with 40% hydrofluoric acid%, 99.5% alcohol and deionized water at vol. ratio of 1: 4:5-1:1:2, or mixing with 40% hydrofluoric acid, 99% dimethylformamide, deionized water at vol. ratio of 1:4:5-1:1:2;    (C) adding IPA (0.3-0.5 mol/L) into etching solution; filling sueded silicon sheet into reaction device of etching by electrochemistry to make one side of silicon sheet contacted with saturated saline solution and the other side contacted with etching solution; and    (D) taking of silicon piece and washing with deionized water to make side which is contacted with etching solution be made to antireflection layer.    The saturated saline solution is contacted with positive electrode and etching solution is contacted with negative electrode. The reaction device is controlled by control system, where electrochemistry etching parameter is set in control system. The control system is opened to process electrochemistry etching. The etching process is carried out at current density of 14-21 A/cm2 and time of 3-10 minutes. The electrochemistry etching reaction device includes horizontal type etch tank and control system. The horizontal type etch tank includes 2 tank bodies through connecting by flanges, where material of tank body is PTFE, gasket is provided between 2 tank bodies, one tank body is provided with saturated salt solution and is connected with positive electrode, and another tank body is provided with etching solution and is connected with negative electrode. The tank body with saturated salt solution is provided with lighting light source and control system is connected with cathode and anode of electrode.