TECHNOLOGY FOCUS - ELECTRONICS - Preferred Chip: The freestanding nitride epitaxial chip further comprises a second semiconducting layer grown on the second side of the semiconducting layer. The freestanding nitride layer has an average alpha less than 1 cm-1. The freestanding nitride epitaxial chip is formed within an inorganic matrix, where the inorganic matrix is a glass. The freestanding nitride epitaxial chip is a cleavable freestanding nitride alloy epitaxial chip. The freestanding nitride epitaxial chip further comprises two freestanding nitride epitaxial chips, which are encapsulated within a glass matrix. The glass matrix has a processing temperature greater than 400 degrees C. The freestanding nitride epitaxial chip further comprises the two freestanding nitride epitaxial chips embedded within an inorganic matrix to form an emitting volume. The freestanding nitride epitaxial chip is a low thermal impedance freestanding epitaxial chip having a thermal conductivity greater than 120 W/m/K. The freestanding nitride epitaxial chip has a first transparent conductive oxide layer on the first side of at least one freestanding nitride layer and a second transparent conductive oxide layer on the second side of at least one freestanding nitride layer. The transparent conductive oxide layer has a thickness greater than 5000 Angstroms. The transparent conductive oxide layer has a resistivity less than 5x10-4 ohm cm. The freestanding nitride epitaxial chip further comprises a spring mounting holding a flexible bowed at least one freestanding nitride layer. It further comprises wire grid polarizers, dichroic films, luminescent layers (amorphous, single crystalline, ceramic, and polycrystalline), or photonic crystal structures. It also comprises the freestanding nitride layer and the semiconducting layer encapsulated within a solid glass concentrator to form a solar cell. The freestanding nitride epitaxial chip further comprises the freestanding nitride layer and the semiconducting layer embedded within a luminescent glass matrix. The freestanding nitride epitaxial chip further comprises an electrical contact formed on the freestanding nitride layer or on the semiconducting layer via welding. Preferred Process: Forming the freestanding nitride epitaxial chip further comprises isolating the freestanding nitride epitaxial chip via mechanical means. At least one side of the freestanding nitride epitaxial chip side has an opaque conductive layer, and the method comprises firing the opaque conductive layer at a temperature greater than 400 degrees C.