NOVELTY - An opto-electric cell has a substrate (5) with porous metal oxide semiconductor film (2), a substrate (6) and an electrolyte layer (4). The porous metal oxide semiconductor film has an electrode layer (1) on its surface, and comprises titanium oxide particles which adsorb visible light-absorption photosensitization material, titanium oxide particles which adsorb near infrared ray-adsorption photosensitization material, and/or titanium oxide particles which adsorb near ultraviolet ray-adsorption photosensitization material.    USE - Opto-electric cell.    ADVANTAGE - The opto-electric cell has excellent photoelectric conversion efficiency. Desorption of photosensitization material is suppressed even when the porous metal oxide semiconductor film is formed by heat-processing at low temperature.    DETAILED DESCRIPTION - An opto-electric cell has a substrate (5) with porous metal oxide semiconductor film, a substrate (6) having an electrode layer (3) on its surface, and an electrolyte layer provided between the porous metal oxide semiconductor film and electrode layer (3). The porous metal oxide semiconductor film has an electrode layer (1) on its surface and adsorbs photosensitization material. The substrates (5,6) are positioned such that the electrode layers (1,3) are provided in opposite direction. The porous metal oxide semiconductor film comprises titanium oxide particles which adsorb visible light-absorption photosensitization material, titanium oxide particles which adsorb near infrared ray-adsorption photosensitization material, and/or titanium oxide particles which adsorb near ultraviolet ray-adsorption photosensitization material. The titanium oxide microparticles have average particle diameter of 5-200 nm. The porous metal oxide semiconductor film is formed by heat-processing porous titanium oxide fine-particle aggregate having average particle diameter of 0.5-10 mu m and pore volume of 0.1-0.8 ml/g, at 80-200 degrees C. An INDEPENDENT CLAIM is included for coating material used for forming porous metal oxide semiconductor film of opto-electric cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of opto-electric cell.    Electrode layers (1,3)    Porous metal oxide semiconductor film (2)    Electrolyte layer (4)    Substrate (5,6)    Porous titanium oxide thin film (7)