NOVELTY - The method comprises depositing an ink containing one type of particles on a substrate (102) to form a precursor layer, where the particles in volume largely consist of the majority (by volume) high-liquefying phase in a single-phase or multi-phase film obtained after heat treatment, carrying out dispersant removal techniques, and processing the precursor layer in several steps to form a photovoltaic absorber layer. A second type of particle having less than 82% of indium is used in the ink, where indium hydroxide is used in the ink. The processing step is carried out in single step process.    USE - The method is useful for forming an absorber layer of a photovoltaic device such as solar cell.    ADVANTAGE - The method is capable of economically and efficiently forming the absorber layer of the solar cell with high quality and less material costs in a less labor-intensive manner and without undesired changes in the uniformity.    DETAILED DESCRIPTION - The method comprises depositing an ink containing one type of particles on a substrate (102) to form a precursor layer, where the particles in volume largely consist of the majority (by volume) high-liquefying phase in a single-phase or multi-phase film obtained after heat treatment, carrying out dispersant removal techniques, and processing the precursor layer in several steps to form a photovoltaic absorber layer. A second type of particle having less than 82% of indium is used in the ink, where indium hydroxide is used in the ink. The processing step is carried out in a single step process, a multi-step process, a bilayer process and a trilayer process. The method further comprises depositing a group VIA on top of arsenic-coated precursor or arsenic-annealed precursor. The processing step is carried out by annealing with a ramp-rate of over 5C/seconds to a temperature of 225-550 degrees C for 30-600 seconds to enhance conversion of indium hydroxide, densification and/or alloying between copper, indium and gallium in an atmosphere containing hydrogen gas, where the plateau temperature is not necessarily kept constant in time, by selenizing the annealed layer with a ramp-rate of over 5C/seconds to a temperature of 225-575 degrees C for a time period of 60 seconds to 10 minutes in selenium vapor in a non-vacuum atmosphere to form a thin-film containing chalcogenide compounds, and by selenizing without the separate annealing step in an atmosphere containing hydrogen gas but densified and selenized in one step with a ramp-rate of over 5C/seconds to a temperature of 225-575 degrees C for a time period of 120 seconds to 20 minutes in an atmosphere containing either hydrogen selenide or a mixture of hydrogen and selenium vapor in a non-vacuum pressure.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a method for fabrication of a film.    Substrate (102)    Diffusion barrier layer (103, 105)    Contact layer. (104)