NOVELTY - Manufacture of a stacked-layered thin film solar cell (100) includes forming a stacked-layered light-absorbing structure (12, 32) by respectively forming first, second, and third light-absorbing layers (321, 322, 323), which have p-type layer structure; forming a fourth light-absorbing layer (324), which has a p-intrinsic-n-type (p-i-n-type) layer structure; forming fifth light-absorbing layer (325), which has n-type layer structure; and performing a reaction process on surface of fifth light-absorbing layer, where the light-absorbing layers are formed by co-evaporation.    USE - Method of manufacturing a stacked-layered thin film solar cell.    ADVANTAGE - The concentration ratios between the ingredients of compounds in a stacked-layered light-absorbing structure are adjusted by co-evaporation through the use of aluminum, thus, extending the band gap gradient of the stacked-layered photoconductive structure from 3.49 to 1.04 eV. Thus, a wide band gap is formed to expand the light absorption band of the stacked-layered thin film solar cell. The concentration ratios between the ingredients of compounds in a stacked-layered light-absorbing structure are adjusted by co-evaporation through the use of indium, thus, forming a p-i-n-type structure similar to a homojunction structure. Hence, electrons and holes at the junction are reduced to minimize the occurrence of defects. The stacked-layered light-absorbing structure has p-i-n-type structure that is similar to a homojunction structure. Thus, electrons can be transferred without the tunnel effect, and the probability of electron transfer is thus increased, and there is no need to form a buffer layer through additional chemical bath deposition (CBD), and band gap discontinuity, which may otherwise occur at a heterojunction, is thus prevented. There is no need to form a buffer layer through additional CBD, thus, use of cadmium sulfide can be dispensed with to prevent pollution, and the manufacturing process is simplified to effectively increase production. The usage of the precious metal indium is reduced to lower production costs.    DETAILED DESCRIPTION - Manufacture of a stacked-layered thin film solar cell (100) comprises:    (A) forming a transparent front electrode layer (11, 31);    (B) forming a stacked-layered light-absorbing structure (12, 32) on the front electrode layer, by forming a first light-absorbing layer (321), which has a p-type layer structure, on the front electrode layer by co-evaporation; forming a second light-absorbing layer (322), which has a p-type layer structure, on the first light-absorbing layer by co-evaporation; forming a third light-absorbing layer (323), which has a p-type layer structure, on the second light-absorbing layer by co-evaporation; forming a fourth light-absorbing layer (324), which has a p-i-n-type layer structure, on the third light-absorbing layer by co-evaporation; forming a fifth light-absorbing layer (325), which has an n-type layer structure, on the fourth light-absorbing layer by co-evaporation; and performing a reaction process on a surface of the fifth light-absorbing layer; and    (C) forming a back electrode layer (13, 33), which is made of metal, on the fifth light-absorbing layer of the stacked-layered light-absorbing structure, where the stacked-layered light-absorbing structure comprises I-III-VI compounds, in which group III elements comprise aluminum and indium.    DESCRIPTION OF DRAWING(S) - The drawing is a sectional view of a stacked-layered thin film solar cell.    Transparent front electrode layer (11, 31)    Stacked-layered light-absorbing structure (12, 32)    Back electrode layer (13, 33)    Stacked-layered thin film solar cell (100)    First, second, and third light-absorbing layers (321, 322, 323)    Fourth light-absorbing layer (324)    Fifth light-absorbing layer (325)