TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composite substrate contains copper, aluminum, metal, composite material, metal matrix composite, ceramic matrix composite, silicon, zinc selenide, aluminum nitride, gallium arsenide, silicon carbide, gallium phosphide, gallium-arsenic phosphide, zinc selenide, zinc oxide, indium phosphide, lithium-gallium oxide or lithium-aluminum oxide. The electroconductive substrate contains copper, aluminum, indium, tin, gold, platinum, zinc, silver, titanium, lead, palladium, germanium, nickel, chromium, cadmium, cobalt, manganese, antimony, bismuth, gallium, thallium, arsenic, selenium, tellurium, polonium, iridium, rhenium, rhodium, osmium, tungsten, lithium, sodium, potassium, beryllium, magnesium, calcium, strontium, barium, zirconium, molybdenum, lanthanum, copper-tin alloy, copper-zinc alloy, copper-cadmium alloy, tin-lead-antimony alloy, tin-lead-zinc alloy, nickel-tin alloy, nickel-cobalt alloy, gold alloy, gold-tin alloy, indium-silver alloy, indium-gold alloy, gold-beryllium alloy, gold-germanium alloy, gold-zinc alloy, lead-tin alloy and/or palladium-indium alloy. The electrically insulated substrate contains sapphire, diamond, glass, quartz, acryl, zinc oxide, or aluminum nitride. The absorbing layer containing copper, aluminum, indium, tin, gold, platinum, zinc, silver, titanium, lead, palladium, germanium, nickel, chromium, cadmium, cobalt, manganese, antimony, bismuth, gallium, thallium, arsenic, selenium, tellurium, polonium, iridium, rhenium, rhodium osmium, tungsten, lithium, sodium, potassium, beryllium, magnesium, calcium, strontium, barium, zirconium, molybdenum, lanthanum, copper-tin alloy, copper-zinc alloy, copper-cadmium alloy, tin-lead-antimony alloy, tin-lead-zinc alloy, nickel-tin alloy, nickel-cobalt alloy and/or gold alloy is provided between reflective layer and electroconductive substrate. The electroconductive region contains indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, palladium, germanium, copper, nickel, gold-tin alloy, indium-silver alloy, indium-gold alloy, gold-beryllium alloy, gold-germanium alloy, lead-tin alloy and/or palladium-indium alloy. The semiconductor stacked layer (I) and semiconductor stacked layer (II) contain gallium, aluminum, indium, arsenic, phosphorus, nitrogen, zinc, cadmium, selenium, antimony, tellurium, mercury, sulfur, hydrogen, magnesium, tin, boron, lead, carbon or silicon. A current spreading layer (54) and a current spreading layer (55) contain indium tin oxide, indium oxide, tin oxide, cadmium tin oxide, antimony tin oxide, aluminum zinc oxide, zinc tin oxide, zinc oxide, aluminum gallium arsenide, gallium nitride, gallium phosphide, gallium arsenide, gallium arsenic phosphide, indium, tin, aluminum, gold, platinum, zinc, silver, titanium, lead, palladium, germanium, copper, nickel, indium-silver alloy, indium-gold alloy, gold-beryllium alloy, gold-germanium alloy, gold-zinc alloy, lead-tin alloy, palladium-indium alloy or gold-tin alloy. A window layer (51) containing gallium phosphide, indium tin oxide, indium oxide, tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, aluminum zinc oxide, zinc tin oxide, gallium arsenide, gallium arsenic phosphide, aluminum gallium arsenide or gallium nitride is provided between current spreading layer (54) and semiconductor stacked layer (I).    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The electrically insulated region and a current blocking layer contains Su 8 (RTM: epoxy resin), benzocyclobutene, perfluorocyclobutane, epoxy resin, acrylic resin, cyclic olefin copolymer, polymethyl methacrylate, polyethylene terephthalate, polycarbonate, polyetherimide, fluorocarbon polymer, silicone, glass, alumina, titania, silica, silicon nitride (SiNx), spin-on glass, tetraethyl orthosilane and/or organic bonding material, where x is not defined.