TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: The substrate comprises an electronic device, where the electronic device comprises organic electroluminescent device (OLED), electrophoretic device, photovoltaic device and/or thin film transistor device.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Assembly: The barrier assembly further comprises a protective polymeric layer disposed adjacent the inorganic layer or oxide composition and opposite the first surface of the substrate; a smoothing polymeric layer disposed between the first surface and the inorganic layer or oxide composition. The barrier assembly further comprises a third inorganic material disposed between the inorganic layer and the protective polymeric layer. The barrier assembly further comprises a transparent conducting oxide disposed on the protective polymeric layer, and/or disposed on the inorganic layer. Preferred Components: The inorganic layer is visible light transmissive. The first and second inorganic material comprise oxides, nitrides, carbides or borides of atomic elements from Groups IIA, IIIA, IVA, VA, VIA, VIIA, IB, or IIB, and/or metals of Groups IIIB, IVB, or VB, rare-earth metals. The first inorganic material comprises a first atomic element, the second inorganic material comprises a second atomic element different from the first atomic element, and the ratio is an atomic ratio of the first atomic element to the second atomic element. The first atomic element comprises silicon and the second atomic element comprises aluminum. The ratio changes from 0.9-0.1 (preferably 0.7-0.3) in the direction perpendicular to the first surface. The ratio changes monotonically in the direction perpendicular to the first surface. The third inorganic material comprises oxides, nitrides, carbides or borides of atomic elements of Groups IIA, IIIA, IVA, VA, VIA, VIIA, IB, or IIB, and/or metals of Groups IIIB, IVB, or VB, rare-earth metals. The transparent conducting oxide comprises indium tin oxide. The oxide of the first atomic element, the oxide of the second atomic element, and the third inorganic oxide comprise silicon oxide or aluminum oxide. The first and second atomic composition comprise atomic elements of Groups IIA, IIIA, IVA, VA, VIA, VIIA, IB, or IIB, and/or metals of Groups IIIB, IVB, or VB, rare-earth metals. Preferred Method: In the process, forming the inorganic layer comprises dual alternating current (AC) sputtering of a first pair of sputtering targets followed by dual AC sputtering of a second pair of sputtering targets. The first pair of sputtering target comprises a first atomic composition and the second pair of sputtering targets comprises a second atomic composition different from the first atomic composition. The first pair of sputtering targets are in first gaseous atmosphere, and the second pair of sputtering targets are in a second gaseous atmosphere different from the first gaseous atmosphere. The substrate is provided on roll, and the forming steps are performed continuously, so as the substrate is unrolled.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The substrate is polymeric substrate that comprises polyethylene terephthalate (PET), polyethylene napthalate (PEN), heat stabilized PET, heat stabilized PEN, polyoxymethylene, polyvinylnaphthalene, polyetheretherketone, fluoropolymer, polycarbonate, polymethylmethacrylate, poly alpha -methyl styrene, polysulfone, polyphenylene oxide, polyetherimide, polyethersulfone, polyamideimide, polyimide or polyphthalamide, or its blends.