TECHNOLOGY FOCUS - ELECTRONICS - Preferred Module: Of the first and second contact layer regions, the thickness of the first contact layer region of the semiconductor device is decreasing starting from the interconnection; and/or where the first contact layer region of the semiconductor device is formed with a thickness that is an element selected from a linearly decreasing thickness or a stepwise decreasing thickness. One or more semiconductor devices comprises substrate that is a transparent substrate, semiconductor layer region that is an active layer of a solar cell, first contact layer region that is a transparent contact, first contact layer region that is a front contact of a solar cell, or second contact layer that is a back contact of a solar cell. The semiconductor devices are formed as cell stripes connected by n-1 interconnections, and elements selected from the cell stripes and the interconnections are formed in parallel to each other. At least one element selected from the first contact layer regions and the second contact layer region includes a transparent conductive oxide, and/or where the semiconductor layer includes silicon (Si). Preferred Method: At least one contact layer is formed by forming the contact layer with a homogeneous thickness and partially removing the contact layer in the contact layer region; forming the contact layer with a homogeneous thickness and partially removing the contact layer in the contact layer region by etching and/or laser treatment; and forming the contact layer with a varying thickness by adapting the coating rate. A sequence of the semiconductor devices has a period, and where the first contact layer is formed with a recurrent thickness modulation having the period. At least one contact layer is formed by forming in each period the contact layer with a thickness which is decreasing starting from the interconnection; and forming in each period the contact layer with a thickness selected from a linearly decreasing thickness or a step-wise decreasing thickness. The method further comprises: (i) forming the first contact layer regions by forming a number of n-1 first grooves in the first contact layer after forming a first contact layer on the substrate, filling the first grooves with an insulating material, or during forming the semiconductor layer, filling the first grooves with the semiconductor layer; (ii) forming the semiconductor layer regions before forming the second contact layer by forming a number of n-1 second grooves in the semiconductor layer at the positions of the interconnections, the second grooves extending to the first contact layer; or (iii) forming the second contact layer regions by forming a number of n-1 third grooves in the second contact layer and the semiconductor layer. Preferred Module: In the semiconductor module a sequence of the semiconductor devices has a period, and the contact layer thickness modulation device comprises: a device selected from a contact layer coating device, a contact layer removing device, a contact layer coating device comprising a coating rate control device, and a contact layer removing device comprising an element selected from a contact layer etching device or a laser device; and/or where the semiconductor device module manufacturing device comprises a control device adapted to control the contact layer thickness modulation device so that a first contact layer and a second contact layer is formed with a recurrent thickness modulation having the period w in parallel to the semiconductor layer.