NOVELTY - A gas-barrier film has gas-barrier layer (2) formed on surfaces of plastic film (1) by catalyst-chemical vapor deposition. The gas-barrier layer contains layer (A) containing silicon, carbon, nitrogen, fluorine and hydrogen, layer (B) containing silicon, oxygen, carbon, nitrogen and hydrogen, and layer (C) containing silicon, carbon, nitrogen and hydrogen. The peak intensity of gas-barrier layers is measured using Fourier-transform infrared optical spectrum.    USE - Gas-barrier film is used for electronic device e.g. touch panel, organic electroluminescent device, inorganic electroluminescent device, solar cell and electronic paper, and gas-barrier bag (all claimed).    ADVANTAGE - The gas-barrier film can be manufactured economically, by a simple process.    DETAILED DESCRIPTION - A gas-barrier film has gas-barrier layer formed on surfaces of plastic film by catalyst-chemical vapor deposition. The gas-barrier layer contains layer (A) containing silicon, carbon, nitrogen, fluorine and hydrogen, layer (B) containing silicon, oxygen, carbon, nitrogen and hydrogen, and layer (C) containing silicon, carbon, nitrogen and hydrogen. The ratio of peak intensity of silicon and hydrogen with respect to peak intensity of silicon and nitrogen of layer (A) is 0.01 or more and 0.05 or less. The ratio of peak intensity of carbon and hydrogen with respect to peak intensity of silicon and nitrogen of layer (A) is more than 0 and 0.07 or less. The ratio of peak intensity of nitrogen and hydrogen with respect to peak intensity of silicon and nitrogen of layer (A) is more than 0.04 and 0.08 or less. The ratio of peak intensity of carbon and fluorine with respect to peak intensity of silicon and nitrogen of layer (A) is more than 0.05 and 0.3 or less. The ratio of peak intensity of silicon and hydrogen with respect to peak intensity of nitrogen and hydrogen of layer (B) is more than 0.1 and 0.9 or less. The ratio of peak intensity of carbon and hydrogen with respect to peak intensity of nitrogen and hydrogen of layer (B) is more than 0 and 0.3 or less. The ratio of peak intensity of silicon and nitrogen with respect to peak intensity of nitrogen and hydrogen of layer (B) is more than 8 and 20 or less. The ratio of peak intensity of silica with respect to peak intensity of nitrogen and hydrogen of layer (B) is more than 2 and 8 or less. The ratio of peak intensity of silicon and hydrogen with respect to peak intensity of silicon and nitrogen of layer (C) is more than 0.01 and 0.05 or less. The ratio of peak intensity of carbon and hydrogen with respect to peak intensity of silicon and nitrogen of layer (C) is more than 0 and 0.07 or less. The ratio of peak intensity of nitrogen and hydrogen with respect to peak intensity of silicon and nitrogen of layer (C) is more than 0.04 and 0.08 or less. The peak intensity of gas-barrier layers is measured using Fourier-transform infrared optical spectrum. An INDEPENDENT CLAIM is included for manufacture of gas-barrier film.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the gas-barrier film.    Plastic film (1)    Gas-barrier layer (2)