NOVELTY - Atmospheric pressure plasma chemical vapor deposition involves introducing a first gas into a chamber (210); igniting a plasma (260) inside the chamber using the first gas, where the igniting further comprises igniting the plasma at conditions containing substantially atmospheric pressure; introducing a second gas into the chamber, and where the introducing the second gas further comprises introducing the second gas into the plasma along with the first gas into the chamber; and depositing a first layer on an object within the chamber, where the first layer comprises the constituent.    USE - For atmospheric pressure plasma chemical vapor deposition useful in solar cell (claimed).    ADVANTAGE - The method using plasma at atmospheric pressure without expensive vacuum chamber and associated equipment used to draw the vacuum, thus reduces cost of producing solar cell.    DETAILED DESCRIPTION - Atmospheric pressure plasma chemical vapor deposition involves introducing a first gas into a chamber (210); igniting a plasma (260) inside the chamber using the first gas, where the igniting further comprises igniting the plasma at conditions containing substantially atmospheric pressure; introducing a second gas into the chamber, where the second gas comprises a constituent, and where the introducing the second gas further comprises introducing the second gas into the plasma along with the first gas into the chamber; and depositing a first layer on an object within the chamber, where the first layer comprises the constituent, and where the depositing further comprises depositing the first layer using the plasma at substantially atmospheric pressure. The first gas is selected from argon, hydrogen and nitrogen. The object comprises a substrate selected from silicon substrate, glass substrate, flexible substrate, polymer substrate, and stainless steel substrate. INDEPENDENT CLAIMS are included for following:    (1) producing a solar cell using atmospheric pressure plasma chemical vapor deposition involving accessing an object comprising a substrate with a first conductive layer disposed on it; depositing several layers on the object to form at least one P-N junction, where the depositing further involves depositing several layers using at least one plasma ignited within at least one chamber at substantially atmospheric pressure, and where several layers comprises a P-type layer, an N-type layer, and an intrinsic layer disposed between the P-type layer and the N-type layer; and disposing a second conductive layer on several layers to form the solar cell, and where several layers are operable to generate a potential difference between the first conductive layer and the second conductive layer when exposed to light energy;    (2) system for producing a solar cell using atmospheric pressure plasma chemical vapor deposition comprising several plasma heads comprising a first plasma head containing a first chamber, where the first plasma head is operable to deposit a P-type silicon layer using a first plasma ignited within the first chamber at substantially atmospheric pressure; a second plasma head coupled with the first plasma head and comprising a second chamber, where the second plasma head is operable to deposit an intrinsic layer using a second plasma ignited within the second chamber at substantially atmospheric pressure; and a third plasma head coupled with the second plasma head and comprising a third chamber, where the third plasma head is operable to deposit a N-type silicon layer using a third plasma ignited within the third chamber at substantially atmospheric pressure; and a component for moving an object to enable several plasma heads to deposit several layers on the object, where the object comprises a substrate with a first conductive layer disposed on it, where several layers comprises a P-type layer, an N-type layer, and an intrinsic layer disposed between the P-type layer and the N-type layer, and where several layers are operable to generate a potential difference between the first conductive layer and a second conductive layer when exposed to light.    DESCRIPTION OF DRAWING(S) - The figure shows view of exemplary plasma head.    Plasma head (200)    Chamber (210)    Object (220)    Gas line (240)    Plasma (260)