TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The each bonding layer has a thickness of 1-100 nm. The each barrier layer has a thickness of 5-100 nm. The dielectric layer has a total thickness of 6-2000 nm. The barrier layer is deposited on a bottom electrode. The bottom electrode is a layer of a conductive material disposed on a substrate, or the bottom electrode is a conductive substrate. The dielectric layer further comprises an additional 1-10 pairs of alternating layers of the barrier material and the crosslinked material. The electronic device comprises a bottom electrode, and the barrier material of the first pair of layers directly contacts the bottom electrode. The barrier material of the first pair of layers is attached through covalent linkages to the bonding material of the first pair of layers. The barrier material of each barrier layer is covalently attached to the bonding material of any adjacent barrier layer. Preferred Process: The step (i), (ii), (iii), and (iv) are repeated for an additional 1-10 times, such that 1-10 additional barrier and bonding layers are formed. The method comprises curing, which is carried out at elevated temperature, after the formation of each bonding layer, and is carried out once after all bonding layers are formed.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The barrier material is a ceramic material comprising oxides of aluminum, silicon, titanium, tungsten, magnesium, zirconium or calcium, nitrides of silicon, tungsten, aluminum, zirconium, chromium, titanium, tantalum, molybdenum, gallium or boron, carbides of silicon, titanium, vanadium, zirconium, iron or boron, borides of titanium or iron, and silicides of tungsten and titanium. The silicon containing material is a siloxane or polysiloxane comprising monomer units having the structure of formula ((-Si(R1)(R2)-X-)n) (I). The silicon containing polymer comprises crosslinked units having a structure of formula (-(Si(R4)(X1)1.5)-).R1, R2 = H, OH, 1-30C hydrocarbyl, organometallic, halocarbyl, and organosilyl (all optionally substituted and optionally containing heteroatom);X = -O- or -NR3-;R3 = hydrocarbyl; andn = greater than or equal to 1;R4 = H, OH, fluorocarbyl or hydrocarbyl, preferably alkyl, alkenyl, alkynyl, alkoxy, aryl, aryloxy, aralkyl or alkaryl (all optionally containing heteroatom, and all optionally substituted with halo, hydroxyl, alkyl or aryl);X1 = -O- (preferred) or -NR5-; andR5 = alkyl or aryl.