TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: Forming the transparent conductive oxide layer comprises sputter depositing the transparent conductive oxide layer. The method further comprises depositing a p-doped semiconductor layer over the etched transparent conductive oxide layer; depositing an intrinsic semiconductor layer over the p-doped semiconductor layer; and depositing an n-doped semiconductor layer over the intrinsic semiconductor layer. It further comprises quenching the etched transparent conductive oxide layer by exposing the transparent conductive oxide layer to a basic solution having a pH of greater than 10; and rinsing the quenched transparent conductive oxide layer with deionized water. Quenching comprises spraying the basic solution onto the transparent conductive oxide layer or dipping the transparent conductive oxide layer into the basic solution. The basic solution comprises ammonium hydroxide and potassium hydroxide. Annealing comprises thermal treating the transparent conductive oxide layer at a first temperature; and thermal quenching the thermally treated transparent conductive oxide layer at a second temperature lower than the first temperature. Thermal quenching comprises reducing the temperature of the thermally treated transparent conductive oxide layer from the first temperature to the second temperature in an oxygen free atmosphere or in an environment having a partial pressure of oxygen that is below the partial pressure of oxygen present in air. It further comprises exposing the thermally treated transparent conductive oxide layer to a gas selected from nitrogen (N2)/hydrogen (H2) mixture; argon/H2 mixture; or N2. The transparent conductive oxide layer is maintained in oxygen free environment or in an environment having partial pressure of oxygen that is below the partial pressure of oxygen present in air, during thermal treating, thermal quenching, and during any time between thermal treating and thermal quenching. The method further comprises depositing a sacrificial protective layer over the transparent conductive oxide layer before annealing.