NOVELTY - A dye-sensitized-type photoelectric conversion element contains dye (a) having maximum absorption in wavelength of 400-700 nm, and phthalocyanine compound (b) (I) having carboxyl group and/or sulfonic acid group and/or phthalocyanine compound (c) as photosensitization dye. The phthalocyanine compound (c) is obtained by reacting phthalocyanine compound (II) with optionally substituted pyridinol, optionally substituted imidazole and/or optionally substituted pyrazole.    USE - Dye-sensitized-type photoelectric conversion element is used for solar cell (claimed).    ADVANTAGE - The dye-sensitized-type photoelectric conversion element has excellent light resistance, energy conversion efficiency and weather resistance, and is easily manufactured using dye having excellent solubility with respect to hydrophilic solvent.    DETAILED DESCRIPTION - A dye-sensitized-type photoelectric conversion element contains dye (a) having maximum absorption in wavelength of 400-700 nm, phthalocyanine compound (b) of formula (I) having carboxyl group and/or sulfonic acid group and/or phthalocyanine compound (c) as photosensitization dye. The phthalocyanine compound (c) is obtained by reacting phthalocyanine compound of formula (II) with optionally substituted pyridinol, optionally substituted imidazole and/or optionally substituted pyrazole.    Z2,Z3,Z6,Z7,Z10,Z11,Z14,Z15=SR1, OR3 or halo;    Z1,Z4,Z5,Z8,Z9,Z12,Z13,Z16=SR1, OR3, halo or NHR2, where at least one of Z1,Z4,Z5,Z8,Z9,Z12,Z13,Z16 is NHR2 and at least four is OR3;    R1-R3=phenyl, aralkyl or 1-20C alkyl (all optionally substituted);    M,M'=metal-free, metal, metal oxide or metal halide;    Z'1-Z'16=H, SR4, NHR5, OR6 or halo, where at least two of Z'1-Z'16 is halo;and    R4-R6=R1.    At least two of Z1-Z16 are groups having carboxyl group or its salt or sulfonic acid group or its salt.    DESCRIPTION OF DRAWING(S) - The drawing shows cross-sectional schematic view of dye-sensitized-type photoelectric conversion element.    Transparent substrate (1)    Electroconductive layer (2)    Electroconductive support (3)    Semiconductor layer (4)    Charge transfer layer (5)