NOVELTY - A modified nano-dot comprises: a surface portion having a functional group; and a core portion comprising a polymeric metal oxide, polymeric metalloid oxide, or polymeric metal alloy oxide.    USE - As modified nano-dot, useful in a modified nano-dot composition element for modulating carrier flux (claimed), such as in organic semiconductor industry, optoelectronics industry, solar cell industry, and organic light emitting diodes which are useful in high quality displays, large area illumination such as flexible displays and lighting, incandescent bulbs, and fluorescent tubes.    ADVANTAGE - The nano-dots are modified to improve their carrier modulation capability, so that they effectively modulate carrier flux to achieve high device efficiency, and are capable of significantly enhancing efficiency of organic electronic elements. The modified nano-dot and their fabrication method have several advantages. In order to obtain high efficiency, organic light emitting diode (OLED) devices must frequently be kept relatively thin, which would consequently limit the use of large nano-dots. The mean particle size of the modified nano-dot is 1-100 nm. Thus the mean particle size of the modified nano-dots can be less than 10 nm so that they can be favorably used in OLEDs. The modified nano-dots are prepared in a solution state so that they can be directly applied to the elements by wet-process. This enables the modified nano-dots to be homogeneously distributed in an element. The modified nano-dots possess high surface charges, such as positive surface charge of +1 to +200 mV, and negative surface charge of -1 to -200 mV. Hence they can be favorably used in the organic semiconductor industry, optoelectronics industry, and solar cell industry. In application of OLEDs, the high surface positive or negative charges of modified nano-dots can effectively modulate the transporting flux of carriers via blocking or trapping mechanism. This can effectively prevent holes from entering emissive layer and causing imbalanced carrier-injection. Further, in presence of high repelling or dragging field arising from highly charged nano-dots, only holes with high energy are able to succeed in passing over the barriers, which in turn causes them to penetrate deeper into emissive layer, leading carrier recombination to take place in a wider region, resulting in a brighter emission and hence a higher power-efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication of the modified nano-dot involving: providing a modifier; diluting the modifier with a solvent; and mixing the diluted modifier with a nano-dot solution of a polymeric metal oxide, polymeric metalloid oxide, or polymeric metal alloy oxide.