TECHNOLOGY FOCUS - ELECTRONICS - Preferred Solar Cell: In the thin film type solar cell, the semiconductor layer is exposed through the light-transmitting portion. The front electrode is exposed through the light-transmitting portion by removing the exposed semiconductor layer. Also, a transparent conductive layer is additionally formed on the semiconductor layer, and is exposed through the light-transmitting portion. The semiconductor layer is exposed through the light-transmitting portion by removing the exposed transparent conductive layer. The front electrode is exposed through the light-transmitting portion by removing the exposed semiconductor layer. The transparent conductive layer is identical in pattern to the semiconductor layer. The light-transmitting portion may be formed in any pattern selected from a straight-line pattern, a curved-line pattern, a letter-shaped pattern, and a symbol-shaped pattern. The semiconductor layer includes a first semiconductor layer, a buffer layer, and a second semiconductor layer which are deposited in sequence. Preferred Method: Manufacturing the thin film type solar cell further comprises: removing the semiconductor layer from the light-transmitting portion under such circumstance that the rear electrode is used as a mask so as to expose the front electrode through the light-transmitting portion; forming a transparent conductive layer on the semiconductor layer after forming the semiconductor layer, where the predetermined portions of semiconductor layer and transparent conductive layer are removed together when forming the contact portions and separating channels; removing the transparent conductive layer from the light-transmitting portion under such circumstance that the rear electrode is used as a mask so as to expose the semiconductor layer through the light-transmitting portion; and removing the transparent conductive layer and semiconductor layer from the light-transmitting portion under such circumstance that the rear electrode is used as a mask so as to expose the front electrode through the light-transmitting portion. The process for removing the transparent conductive layer and semiconductor layer from the light-transmitting portion is performed by a dry etching process. The dry etching process for removing the transparent conductive layer from the light-transmitting portion is performed through the use of at least one gas of methane (CH4), ethane (C2H6), boron trichloride (BCl3), chloride (Cl2), argon (Ar), and hydrogen gas (H2); the dry etching process for removing the semiconductor layer from the light-transmitting portion is performed through the use of at least one gas of a fluorine-based gas, a chlorine-based gas, or their mixture. The process for removing the transparent conductive layer and semiconductor layer from the light-transmitting portion is performed by a wet etching process. The wet etching process is performed through the use of an etchant including at least one etching material selected from sodium hydroxide (NaOH), potassium hydroxide (KOH), hydrochloric acid (HCl), nitric acid (NHO3), sulfuric acid (H2SO4), phosphoric acid (H3PO3), hydrogen peroxide (H2O2), and oxalic acid (C2H2O4). The etchant is maintained at a temperature of 20-200 degrees C. The wet etching process is performed by submerging the substrate into the etchant, or spraying the etchant onto the substrate. The process for forming the contact portions and separating channels is performed with one laser beam irradiation by dividing laser beam emitted from a laser oscillator into laser beams by a set of directions, so that the contact portions and separating channels are formed at the same time. The method further comprises: etching for removing residue from the contact portions and separating channels after the process for forming the contact portions and separating channels. The process for forming the semiconductor layer is performed by sequentially depositing a first semiconductor layer, a buffer layer, and a second semiconductor layer. Alternatively, manufacturing the thin film type solar cell comprises: forming a set of front electrodes at fixed intervals on a substrate; forming a semiconductor layer on an entire surface of the substrate including the set of front electrodes; forming a set of contact portions by removing predetermined portions of the semiconductor layer; patterning a set of rear electrodes at fixed intervals by each separating channel interposed in-between, where the each rear electrode is electrically connected with the front electrode through the contact portion, and the each rear electrode includes a light-transmitting portion in it so as to enhance a light-transmission area; and removing the semiconductor layer from the light-transmitting portion and separating channel under such circumstance that the rear electrode is used as a mask. The method further comprises: forming a transparent conductive layer on the semiconductor layer after forming the semiconductor layer, where the predetermined portions of semiconductor layer and transparent conductive layer are removed together when forming the contact portions, and where the predetermined portions of the transparent conductive layer are removed when removing the semiconductor layer from the light-transmitting portion and separating channel; and etching for removing residue from the contact portions after the process for forming the contact portions. The process for forming the semiconductor layer is performed by sequentially depositing a first semiconductor layer, a buffer layer, and a second semiconductor layer.