TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: The second electrically conductive structure further comprises an electric supply structure that forms an electrical feed-through connection, having a first portion covered by the barrier structure and a second portion left free by the barrier structure. The second electrode layer forms an electrical feed-through connection. A conducting charge injection layer is arranged between the first electrically conductive structure and the active structure. The conducting charge injection layer has a thickness of 10-500 nm. The electrical insulator structure is formed by an oxidized portion of the first electrically conductive structure. The first electrically insulating barrier structure comprises silicon oxide or silicon nitride. It comprises a stack of alternating layers of silicon oxide and silicon nitride. The semiconductor device comprises a substrate that forms the first electrically conductive structure. A patterned electrically insulating layer is applied between the first and the second electrically conductive structure, where the electrically insulating layer covers a part of the surface of the first electrically conductive structure that is left free by the electrically insulating barrier layer. Preferred Method: Manufacturing the semiconductor device further comprises providing an electric supply structure that electrically contacts the second electrode layer on the first electrically insulating barrier structure, where the electric supply structure and the second electrode layer form the second electrically conductive structure, where the second electrically insulating barrier structure is deposited over the second electrically conductive structure so that a portion of the electric supply structure remains uncovered and forms a feed-through to the electrode layer. The first electrically insulating barrier structure is applied by locally oxidizing the first electrically conductive structure. The first electrically insulating barrier structure is provided on the first electrically conductive structure, by the subsequent substeps of applying a mask layer, depositing at least one layer of an electrically insulating barrier material and removing the patterned mask layer. The first electrical insulator layer structure is provided on the first electrically conductive structure, by the subsequent substeps of applying a layer of an electrically insulating barrier material, applying a mask layer, and etching exposed portions of the layer of insulating barrier material.