TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The first transparent electrode is made of a material selected from zinc oxide, nickel oxide, strontium oxide, indium tin oxide, gallium zinc oxide, indium gallium zinc oxide, indium gallium oxide, indium zinc oxide and indium oxide (preferably zinc oxide). The group III-V compound is selected from aluminum nitride, gallium nitride and indium nitride. The dopant is selected from aluminum, indium, gallium and/or fluorine. The silicide layer is made of any one selected from nickel silicide, titanium silicide, cobalt silicide, molybdenum silicide, palladium silicide, platinum silicide, tantalum silicide and tungsten silicide. The refractory metal nitride layer is made of any one selected from titanium nitride, tantalum nitride and tungsten nitride. The refractory metal/refractory metal nitride double layer comprises refractory metal which is made of any one selected from titanium, tantalum, molybdenum, cobalt and nickel, and refractory metal nitride is made of any one selected from titanium nitride, tantalum nitride, tungsten nitride and molybdenum nitride. The second diffusion barrier layer is made of any oxide selected from silicon dioxide, nickel oxide, aluminum oxide, silver oxide, copper oxide, zinc oxide, indium oxide, tin oxide, indium tin oxide, titanium oxide, hafnium oxide, zirconium oxide, ruthenium oxide and tantalum pentoxide, or a metal-silicate formed by atomic layer deposition. The infra-red barrier layer is made of any one selected from aluminum, gold, silver, ruthenium, iridium, platinum, nickel, cobalt, titanium, tantalum, and copper. The protective layer is made of silicon nitride, aluminum nitride, silicon dioxide, nickel oxide, chromium oxide, and/or aluminum oxide. The semiconductor layer is made of silicon, silicon-germanium, a group III-V compound semiconductor, and/or group II-VI compound semiconductor. The metallic layer is made of any one of nickel, aluminum, titanium, cobalt, molybdenum, palladium, platinum, tantalum, tungsten, aluminum oxide, nickel oxide, cobalt oxide, titanium oxide, tantalum oxide, nickel silicide, titanium silicide, cobalt silicide, molybdenum silicide, palladium silicide, platinum silicide, tantalum silicide, and tungsten silicide.