TECHNOLOGY FOCUS - MECHANICAL ENGINEERING - Preferred Apparatus: The apparatus further comprises an actuator system configured to translate the mask segments between a first position and a second position. It further comprises at least a second workpiece having a second area disposed in the path of the ion beam, where the two mask segments are configured to cover the first area and the second area. It further comprises a third workpiece and a fourth workpiece disposed in the path of the ion beam, the two mask segments configured to cover the third and fourth workpieces. It further comprises a third workpiece, fourth workpiece, fifth workpiece, and sixth workpiece disposed in the path of the ion beam, the two mask segments configured to cover the third, fourth, fifth, and sixth workpieces. The workpiece has a first width and where each of the mask segments has a second width, the second width being greater than 50% of the first width. The two mask segments are composed of a material selected from the group consisting of graphite, carbon carbon, silicon carbide, silicon nitride, and quartz. Preferred Method: In implantation, disposing the workpiece comprises loading the workpiece onto the platen when the mask segments are in the first position. It further comprises unloading the workpiece from the platen while the mask segments are in the first position. It further comprises performing a second ion implant of the workpiece with the ion beam while the mask segments are in the first position. The second ion implant is performed prior to the first ion implant. Disposing further comprises disposing at least a second workpiece onto the platen. Alternatively, implantation comprises: loading a first workpiece on a platen behind a first mask segment and a second mask segment, each mask segment having apertures; translating the first mask segment from a first position to a second position; implanting an ion beam through the apertures of the first mask segment into the first workpiece; loading a second workpiece on the platen; translating the second mask segment from a first position to a second position; implanting the ion beam through the apertures of the second mask segment into the second workpiece; translating the first mask segment from the second position to the first position; and unloading the first workpiece. Loading the second workpiece occurs at Least partially simultaneously with the implanting the first workpiece and the unloading the first workpiece occurs at least partially simultaneously with the implanting the second work piece. It further comprises translating the second mask segment from the second position to the first position and unloading the second workpiece. Translating the second mask segment from the first position to the second position is at least partially simultaneous with the translating the first mask segment from the second position to the first position.