NOVELTY - Sputter target (500) structure for depositing semiconducting chalcogenide films, comprises a target body containing at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 parts-per-million (ppm), and a carbon (C) impurity less than 500 ppm, where the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and where the at least one chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy.    USE - As a Sputter target structure for depositing semiconducting chalcogenide films (claimed) used as absorber layers in photovoltaic devices such as solar cells.    ADVANTAGE - The sputter target has high density, low impurity sputter target solutions, low impurity, and high density thin film absorber layers. The chalcogenide alloy have purity of at least approximately 2N7, gaseous impurities less than 500 parts-per-million (ppm) for oxygen (O), nitrogen (N), and hydrogen (H) individually and a carbon (C) impurity less than 500 ppm.    DETAILED DESCRIPTION - Sputter target (500) structure for depositing semiconducting chalcogenide films, comprises a target body containing at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 parts-per-million (ppm) for oxygen (O), nitrogen (N), and hydrogen (H) individually, and a carbon (C) impurity less than 500 ppm, where the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and where the at least one chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy. The chalcogens of the at least one chalcogenide alloy comprises at last one of sulfur, selenium, or tellurium. An INDEPENDENT CLAIM is included for producing a sputter target body involving:    (1) process A: providing ingot containing chalcogenide alloy or collectively containing at least two materials including at least one chalcogen and electropositive element or compound, that together are suitable for use in forming the at least one chalcogenide alloy; melting the ingots; and solidifying the ingots after melting in a mold to produce a sputter target body having a sputter target body composition comprising the at least one chalcogenide alloy; and    (2) process B: providing a volume of powder containing particles that collectively comprise materials including at least one chalcogen and at least one electropositive element or compound, that together are suitable for use in forming at least one chalcogenide alloy; subjecting the volume of powder to mechanical alloying, milling, or blending processes to produce a processed volume; and consolidating the processed volume to produce a sputter target body having a sputter target body composition comprising the at least one chalcogenide alloy.    DESCRIPTION OF DRAWING(S) - The figure shows diagrammatic top and cross-sectional side views of sputter target.    Sputter target (500)    Sputtering surface (502)