NOVELTY - The return device (109b) has a movable shaft which is located within an opening formed in a base. A strap (200) coupled between the base and the shaft, has inner layer which is formed of nickel-molybdenum-chromium alloy having ultimate tensile strength that is same at ambient temperature and processing temperature of 200 degrees C or more. The inner layer is coated, wrapped or encased with a conductive outer layer which is made of aluminum.    USE - Radio frequency (RF) return device for plasma processing chamber e.g. plasma enhanced chemical vapor deposition (PECVD) chamber used in plasma processing system (claimed) for processing large area substrate used in fabrication of flat panel display e.g. LCD, organic LED (OLED) and photovoltaic cell for solar cell arrays. Can also be used in physical vapor deposition (PVD) chamber, etching chamber, semiconductor processing chamber, etc.    ADVANTAGE - The RF return device with the strap can minimize arcing in the plasma processing system. The RF current can be made to flow across or through one or more RF devices provided in the plasma processing system, to minimize the potential of arcing between the chamber wall and substrate support. Positioning and/or spacing of the RF devices in the plasma processing system can be adjusted to minimize arcing or arcing potential, so RF return can be enhanced. Hence the plasma uniformity and deposition uniformity of films on the substrate can be facilitated and large area substrates can be processed efficiently in the plasma processing system.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) plasma processing system; and    (2) method for providing electrically symmetrical ground or return path for electrical current between two electrodes.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the RF return device.    Substrate (101)    Return device (109b)    Strap (200)    Connection assembly (230)    Fastener (235)