TECHNOLOGY FOCUS - ELECTRONICS - Preferred Photovoltaic Device: A diameter of the crystalline silicon grain is 3-10 nm. An average hydrogen content of the light absorbing layer is 15-25 atomic %. Preferred Method: In manufacturing a photovoltaic device, a pressure of the chamber is constant while the light absorbing layer is formed. A ratio of a time period for supplying the first voltage to a time period for supplying the second voltage is maintained constant. When the first voltage is supplied to the electrode, a first sub-layer comprising amorphous silicon is formed, and where, when the second voltage is supplied to the electrode, a second sub-layer comprising a crystalline silicon grain is formed. The first frequency is equal to or more than 13.56 MHz. A thickness of the light absorbing layer is 150-350 nm. The light absorbing layer comprises a first sub-layer which is formed during a time period for supplying the first voltage, and a second sub-layer which is formed during a time period for supplying the second voltage, and where a thickness of the first sub-layer is equal to or more than 10 nm. The light absorbing layer comprises a first sub-layer which is formed during a time period for supplying the first voltage, and a second sub-layer which is formed during a time period for supplying the second voltage and which comprises a crystalline silicon grain, and where a diameter of the crystalline silicon grain is 3-10 nm. The light absorbing layer comprises a first sub-layer which is formed during a time for supplying the first voltage, and a second sub-layer which is formed during a time for supplying the second voltage, and where thickness of the first sub-layer and the second sub-layer which are formed during one cycle are equal to or less than 50 nm. An optical band gap of the light absorbing layer is 1.85-2.0 eV. When the light absorbing layer is formed, oxygen, carbon, or germanium is flown to the chamber, where flow rates of the oxygen, carbon, or germanium is maintained constant during a deposition time, and where the light absorbing layer is comprised in a photoelectric transformation layer on which light is incident first among the photoelectric transformation layers. The average oxygen content or the average carbon content of the light absorbing layer is 0-3 atomic %. An average germanium content of the light absorbing layer is 0-20 atomic %.