TECHNOLOGY FOCUS - ELECTRONICS - Preferred Solar Cell: In the solar cell, the semiconductor substrate is a p type semiconductor substrate, the emitter layer is an n type semiconductor dopant doping layer, and the rear field layer is a p+ type semiconductor dopant doping layer doped with higher concentration than that of the p type semiconductor dopant doped on the semiconductor substrate. The width of the finger part of the metal electrode is narrower than that of the penetration part or the bus bar. The width of the bus bar of the metal electrode is wider than that of the penetration part. The width of the metal electrode that penetrates through the emitter layer, the semiconductor substrate, and the passivation layer is 50-100 mu m. The emitter layer is further formed on the rear surface of the semiconductor substrate, where the emitter layer, which is an adjacent region to the metal electrode penetrating through the emitter layer, is a selective emitter layer that is configured to include a first region doped with high-concentration semiconductor dopant and a second region doped with semiconductor dopant having concentration lower than that of the first region. The thickness of the first region is larger than that of the second region. At least one rear field layer is selectively formed at a portion contacting the semiconductor substrate through the contact hole of the passivation layer. Also, at least one rear field layer is connected with the rear electrode using laser. The solar cell further comprises at least one antireflection film that is formed on the upper surface of the emitter layer. The front surface of the semiconductor substrate or the front surface and rear surface of the semiconductor substrate is a texturing structure. Preferred Method: Fabricating the crystalline silicon solar cell further comprises locally forming the rear field layer at a contact surface of the rear electrode and the semiconductor substrate; and texturing the front surface of the semiconductor substrate or the front surface and the rear surface of the semiconductor substrate before and after forming the through groove. The step of forming the metal electrode and the step of forming the rear electrode are performed at the same time or a different time. The metal electrode is formed by applying and heat treating silver (Ag) paste in the penetration groove of the semiconductor substrate. The rear electrode is formed by applying and heat treating aluminum (Al) paste or aluminum silver (AgAl) paste. Moreover, the step of forming the emitter comprise the steps of: patterning a silicon oxide film on the front surface of the semiconductor substrate including the penetration groove; and forming a first region doped with high-concentration semiconductor dopant by the thermal diffusion of semiconductor dopant having a conductive type opposite to that of the semiconductor substrate and a second region that locally penetrates through the patterned silicon oxide film and doped with semiconductor dopant having lower concentration than that of the first region. The method as well comprises forming at least one antireflection film on the upper portion of the emitter layer. The passivation layer having the contact hole is formed by forming at least one film composed of at least any one material selected from a group consisting of silicon oxide (SiO2), silicon nitride (SiNx), and silicon oxinitride (SiOxNy) by any one of a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, a printing method, and a spray method; and generating at least one contact hole by removing a portion of the film by a chemical etching method or a mechanical etching method.