NOVELTY - An n-type-semiconductor layer (3) is formed by dispersing electron-accepting inorganic substance in binder resin as main component, between electrodes (a,b) having translucency. A p-type-semiconductor layer (4) is formed by dispersing electron-donating organic material in binder resin as main component. The n-type-semiconductor layer and p-type-semiconductor layer are is coated with liquid and dried. Then, the n-type-semiconductor layer and p-type-semiconductor layer are coated with electrically conductive paste, and electrode (c) which opposes electrode (a) is formed.    USE - Manufacture of heterojunction-type photovoltaic device used for solar cell, optical sensor and photodiode.    ADVANTAGE - The method economically provides heterojunction-type photovoltaic device without using large-scale apparatus, and is safe.    DETAILED DESCRIPTION - An n-type-semiconductor layer is formed by dispersing electron-accepting inorganic substance in binder resin as main component, between electrodes (a,b) having translucency. A p-type-semiconductor layer is formed by dispersing electron-donating organic material in binder resin as main component. The n-type-semiconductor layer is coated with liquid containing binder resin, electron accepting inorganic substance and solvent, and dried at normal temperature under atmospheric pressure. The p-type-semiconductor layer is coated with liquid containing binder resin, electron donating inorganic substance and solvent, and dried at normal temperature under atmospheric pressure. Then, the n-type-semiconductor layer and p-type-semiconductor layer or coated with electrically conductive paste containing electroconductive substance dispersed in resin, and electrode (c) which opposes the electrodes (a) is formed. Thus, photovoltaic device is manufactured.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic block diagram of heterojunction-type photovoltaic device.    Transparent insulation substrate (1)    Transparent electrodes (2)    N-type-semiconductor layer (3)    P-type-semiconductor layer (4)    Back electrode layer (5)