NOVELTY - Fabricating a thin-film semiconductor device involves providing raw semiconductor materials; pre-reacting the raw semiconductor materials to form a homogeneous compound semiconductor material; forming fine particles less than 1 micrometer in dimension from the homogeneous compound semiconductor material; depositing the fine compound semiconductor particles or their dispersion, onto a substrate to form a thin-film; and thermally processing the deposited thin-film to form a thin-film having a composition same as a composition of the homogeneous compound semiconductor material.    USE - For forming a thin-film semiconductor device, particularly photovoltaic device (claimed) including photovoltaic solar cells.    ADVANTAGE - The method involve reacted particle deposition (RPD) method, which provides an alternative path for forming compound semiconductor thin-films. The method produce a uniform film with a designated composition while requiring reduced levels of post-deposition processing in comparison to other established fabrication methods. These attributes imparts multiple advantages for the design, performance and manufacture of such films for photovoltaic solar cells and other devices. The method provides thin-films with improved compositional, chemical and structural uniformity in both profile and across their area. As a consequence, properties which are dependent on uniformity are improved. Thermal and/or chemical post-deposition processes that are conventionally used to approach such uniformity also be reduced or eliminated. The latter will be beneficial for minimizing interactions between device layers, process simplification and manufacturing cost reduction.    DETAILED DESCRIPTION - Fabricating a thin-film semiconductor device involves providing raw semiconductor materials; pre-reacting the raw semiconductor materials to form a homogeneous compound semiconductor material; forming fine particles less than 1 micrometer in dimension from the homogeneous compound semiconductor material; depositing the fine compound semiconductor particles or their dispersion, onto a substrate to form a thin-film; and thermally processing the deposited thin-film to form a thin-film having a composition same as a composition of the homogeneous compound semiconductor material. The raw semiconductor materials include II-VI compound semiconductor materials; and I-III-VI compound semiconductor materials. The raw semiconductor materials are pre-reacted above the liquidus temperature of the compound semi-conductor. The method further involves providing Cu as a minor constituent along with the II-VI compound semiconductor materials; providing Al in complete or partial substitution for Ga; providing Na as a minor constituent along with the I-III-VI compound semiconductor materials; providing an alkali element other than Na as a minor constituent long with the I-III-VI compound semiconductor materials; providing F as a minor constituent along with the I-III-VI compound semiconductor materials; and providing a halogen element other than F as a minor constituent along with the I-III-VI compound semiconductor materials. The pre-reacting the raw semiconductor materials include heating the raw semiconductor materials at an elevated temperature to establish a structure representative of the thin-film semiconductor that is to be fabricated. The particle dispersion is formed in a carrier material. An INDEPENDENT CLAIM is included for a photovoltaic device, comprising: a substrate; a first electrode disposed on the substrate; a light absorbing layer that includes a reacted particle deposited compound semiconductor thin-film; and a second electrode disposed over the light absorbing layer.