NOVELTY - Preparing silicon solar cell with a hidden emitter comprises: (a) drilling hole on a p type silicon wafer by laser; (b) cleaning the silicon wafer so as to remove the dirt on the surface; (c) defining the p-n junction at the backside of the silicon wafer; (d) regarding the phosphorus hypochlorite (POCl3) as the phosphorus to diffuse in the diffusion furnace; (e) passivating the surface of the silicon wafer after the diffusion; and (f) arranging the anodes connected with the p type electrode region and the cathodes connected with the n type electrode region at intervals.    USE - The method is useful for preparing silicon solar cell with a hidden emitter (claimed).    ADVANTAGE - The method can better prepare silicon solar cell with the hidden emitter.    DETAILED DESCRIPTION - Preparing silicon solar cell with a hidden emitter comprises: (a) drilling hole on a p type silicon wafer by laser; (b) cleaning the silicon wafer so as to remove the dirt on the surface; removing the radiation loss layer generated by the laser drilling by a corrosive liquid; texturing the surface; (c) defining the p-n junction at the backside of the silicon wafer by adopting one or more of the following methods: (i) depositing the SiNx film as the diffusion barrier layer; (ii) silk-screen printing a corrosion-proof paste; or (iii) etching trench by laser; (d) regarding the phosphorus hypochlorite (POCl3) as the phosphorus to diffuse in the diffusion furnace so as to obtain the square resistance of 40-70 ohm/cm2 of the emission region or the square resistance of 110 ohm/cm2 of the emission region at the front surface and the square resistance of 20 ohm/cm2 of the emission region at the back surface of the battery; (e) passivating the surface of the silicon wafer after the diffusion, growing a silicon dioxide (SiO2) or SiNx thin film on the surface of the silicon wafer; and (f) arranging the anodes connected with the p type electrode region and the cathodes connected with the n type electrode region at intervals by the silk-screen printing at the backside of the silicon wafer by the metal paste; then drying the anodes and the cathodes; and sintering.