NOVELTY - A solar cell comprises photoelectric a conversion layer (103) comprising at least p- and n-type semiconductor, a light-incident side electrode layer (101) formed on light-incident surface of the conversion layer, and a counter electrode layer (102) formed on the surface opposite to the light-incident surface. The light-incident side electrode layer and/or counter electrode layer has openings bored through the layer, and has thickness of 10-200 nm. Each opening occupies an area of 80 nm2 to 0.8 mu m2, and opening ratio is 10-66%. The transmittance of the whole cell is greater than or equal to 5% at 700 nm.    USE - As a solar cell, particularly a light transmission type solar cell (claimed).    ADVANTAGE - The present solar cell employs a nano-fabricated metal thin film as a metal electrode, and thus provides a light transmission type solar cell excellent in both power generation efficiency and light transparency.    DETAILED DESCRIPTION - A solar cell comprises a photoelectric conversion layer (103) comprising at least p-type semiconductor and n-type semiconductor, a light-incident side electrode layer (101) formed on a light-incident surface of the photoelectric conversion layer, and a counter electrode layer (102) formed on the surface opposite to the light-incident surface. The light-incident side electrode layer and/or counter electrode layer has openings bored through the layer, and has thickness of 10-200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 mu m2, and the opening ratio is 10-66% and is defined as the ratio of the total area of the openings based on that of the layer having openings. The light of 700 nm wavelength can penetrate in a transmittance of greater than or equal to 5% from the light-incident side electrode layer to the counter electrode layer. The solar cell comprises a depletion layer which is at least partly positioned within a distance of 1000 nm from the contact surface between the light-incident side electrode layer and photoelectric conversion layer. The photoelectric conversion layer comprises at least p-type silicon and n-type silicon. The photoelectric conversion layer comprises single crystal silicon or poly-crystal silicon and has a thickness of 20-200 nm; or amorphous silicon and has a thickness of 10-500 nm. An INDEPENDENT CLAIM is included for production of the solar cell involving forming a photoelectric conversion layer, forming a light-incident side electrode layer on a light-incident surface of the photoelectric conversion layer, and forming a counter electrode layer on the surface opposite to the light-incident surface of the photoelectric conversion layer, where the step of forming light-incident side electrode layer having fine openings involves forming a thin metal layer, coating a resist composition on at least a part of the thin metal layer to form a resist layer, forming a mono-particle layer of fine particles on the resist layer, etching the resist layer by use of the mono-particle layer as an etching mask to form a resist pattern, filling openings in the resist pattern with inorganic substance to form a reverse pattern mask, and etching the thin metal layer by use of the reverse pattern mask as an etching mask.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of a solar cell.    Light-incident side electrode (101)    Counter electrode (102)    Photoelectric conversion layer (103)