NOVELTY - The method for manufacturing a photoelectric conversion device having a laminated structure of a lower electrode (20), a photoelectric conversion semiconductor layer (30) that generates a current by absorbing light and an upper electrode (50) on a substrate (10) and an alkali (earth) metal supply layer (70), is claimed. The upper electrode is provided between the substrate and the lower electrode. The lower electrode includes types of alkali metals and/or alkali earth metals, and supplies the types of alkali metals and/or alkali earth metals to the semiconductor layer.    USE - The method is useful for manufacturing a photoelectric conversion device, which is useful in a solar cell (claimed) and infrared sensors.    ADVANTAGE - The method ensures economical and rapid manufacture of the photoelectric conversion device with lightweight, high flexibility, productivity and performance, increased light absorption rate and enhanced energy and photoelectric conversion efficiencies and without any defects such as dielectric breakdown thus reducing the thickness and weight of the solar cells.    DETAILED DESCRIPTION - The method for manufacturing a photoelectric conversion device having a laminated structure of a lower electrode (20), a photoelectric conversion semiconductor layer (30) that generates a current by absorbing light and an upper electrode (50) on a substrate (10) and an alkali (earth) metal supply layer (70), is claimed. The upper electrode is provided between the substrate and the lower electrode. The lower electrode includes types of alkali metals and/or alkali earth metals, and supplies the types of alkali metals and/or alkali earth metals to the semiconductor layer. A major component of the photoelectric conversion semiconductor layer is a type of compound semiconductor having a chalcopyrite structure formed of a group Ib element, a group IIIb element, and a group VIb element. The alkali (earth) metal supply layer is formed by a sputtering method in the presence of oxygen and/or nitrogen using a semi-conductive or conductive target that includes the types of alkali metals and/or alkali earth metals. The alkali (earth) metal supply layer is formed by a pulse direct current sputtering method, a magnetron sputtering method, and a dual magnetron sputtering method. A total amount of the types of alkali metals and/or alkali earth metals in a silicon target is 5-20 at.%. The silicon target includes the types of alkali metals and/or alkali earth metals. The silicon target is a sintered body obtained by casting and sintering a mixed powder of a powder of the type of sodium salt and silicon. The sintered body includes an unavoidable impurity. INDEPENDENT CLAIMS are included for:    (1) a photoelectric conversion device; and    (2) a target for sputtering to form an alkali (earth) metal supply layer of a photoelectric conversion device.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a photoelectric conversion device.    Substrate (10)    Lower electrode (20)    Photoelectric conversion semiconductor layer (30)    Buffer layer (40)    Upper electrode (50)    Alkali (earth) metal supply layer. (70)