NOVELTY - The sensor has a set of individual detection structures (1ij) associated with respective pixels. Each detection structure comprises a photodiode (3ij) having a solar cell mode operating range. An amplifier stage (4ij) i.e. buffer amplifier, is constantly supplied with power, and receives voltage based on voltage of the photodiode as input, where voltage of the photodiode falls within the range. Another amplifier stage (5ij) i.e. buffer amplifier, is linked to output of the former amplifier stage and supplied with power in a different manner based on whether the former stage is read or not.    USE - Image matrix sensor.    ADVANTAGE - The configuration of the sensor allows utilization of a storage system for storing the voltage provided by the photodiode in the output of the amplifier stage, thus reducing time shift induced by progressive reading of output signals, and hence avoiding deformation of a moving object observed by the sensor. The output of the amplifier stage can be directly connected to an input of the other amplifier stage so as to obtain a compact individual detection structure. The latter amplifier stage can be formed of a p-channel MOSFET, so that the photoelectric current induced in the drain and the source of the MOSFET by parasitic photodiodes is directed in a direction similar to that of polarization current, thus increasing the polarization current, and reducing the appearance of columns of black pixels in an image formed on the sensor, in case of over-exposure to an intense light source. The configuration of the sensor is such that the amplifier stages are formed of same type transistors, thus simplifying the fabrication of the individual detection structures.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for reading a signal acquired by an individual detection structure associated with a pixel of an image matrix sensor.    DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of an individual detection structure.    Individual detection structures (1ij)    Photodiode (3ij)    Amplifier stages (4ij, 5ij)    Controlled switch (8ij)    P-channel MOSFETs (41ij, 42ij)