NOVELTY - The method comprises producing a p-doped zinc oxide-containing material with a molecular beam epitaxial process, where the p-doping is formed by a nitrogen-doping during the growth of the material and the growth temperature is 150-400 degrees C during the growth and doping of the zinc oxide-containing material. Oxygen and nitrogen from two plasma sources that are independent of each other are provided for disposal during the growth and doping of the zinc oxide-containing material. The growth and doping steps take place under strong metal-rich conditions.    USE - Method for producing a nitrogen-doped zinc oxide-containing material to form a diode structure or laser structure and/or a n-doped and p-doped semiconductor material for producing a semiconductor device (all claimed), and useful in the field of photovoltaic for improving the efficiency of solar cells and for silicon thin film technology.    ADVANTAGE - The method is capable of effectively and reliably producing the nitrogen-doped zinc oxide-containing material, achieves high doping with good crystal quality, achieves high hole concentration in the nitrogen-doped material, and allows very accurate control of nitrogen content in nitrogen plasma.    DETAILED DESCRIPTION - The method comprises producing a p-doped zinc oxide-containing material with a molecular beam epitaxial process, where the p-doping is formed by a nitrogen-doping during the growth of the material and the growth temperature is 150-400 degrees C during the growth and doping of the zinc oxide-containing material. Oxygen and nitrogen from two plasma sources that are independent of each other are provided for disposal during the growth and doping of the zinc oxide-containing material. The growth and doping steps take place under strong metal-rich conditions. The composition of the nitrogen plasma is measured and the production parameter such as high frequency output for the production of the nitrogen plasma and/or the nitrogen flow are adjusted, so that the portion of the atomic nitrogen prevails the portion of the molecular nitrogen in the nitrogen plasma. The portion of the atomic nitrogen in the nitrogen plasma is 60-80% of the total nitrogen. The emission spectrum of the nitrogen plasma is measured and the composition of the nitrogen plasma is determined with the measured emission spectrum. The high frequency output is adjusted to a value of 250-450 W and/or the nitrogen flow is adjusted to a value of 0.15-0.30 sccm. The zinc oxide-containing material is provided with p-doping by nitrogen of 1018 cm-3 or above 1018 cm-3. A diode structure or laser structure is formed, which includes the nitrogen-doped zinc oxide-containing material. An optical active zone of the diode structure or laser structure is produced with zinc cadmium oxide having cadmium portion of 20-35% suitable for the emission of visible green light. A n-doped and p-doped semiconductor material is produced, which encloses the optical active zone of the diode structure or laser structure, where a component of the p-doped semiconductor material is formed with the nitrogen-doped zinc oxide-containing material. INDEPENDENT CLAIMS are included for:    (1) a method for producing a diode structure or laser structure; and    (2) a semiconductor device.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of a method for producing a nitrogen-doped zinc oxide-containing material.    Surface (10)    Carrier/nucleation layer. (20)