TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Elements: The conduction grains are chosen from metals and alloy grains of gold, platinum, copper, zinc, silver, tin, nickel, iron, iridium, ruthenium and/or indium. The semiconductor grains are selected from titanium oxide grains, zinc oxide grains, zirconium oxide grains, silica grains, tungsten oxide grains, nickel oxide grains, tantalum oxide grains, niobium oxide grains, tin oxide grains, yttrium oxide grain, lanthanum oxide grains, hafnium oxide grains, strontium oxide grains, indium oxide grains, vanadium pentoxide grains, chromium oxide grains, molybdenum oxide grains, magnesium oxide grains, scandium oxide grains, samarium oxide grains, gallium oxide grains, strontium titanate grains, zinc sulfide grains, lead sulfide grains and cadmium sulfide grains. The conduction bottom is conductive glass of fluorine-tin dioxide or tin indium oxide. Preferred Property: The particle diameter of conduction grain is 2-40 nanometer. The weight ratio of semiconductor grains and conduction grains in multi-hole semiconductor layer is 50-200:1-3. The compaction semiconductor layer has thickness of 0.5-6 micron. The multi-hole semiconductor layer has thickness 6-18 micron. The semiconductor grains have particle diameter of 15-40 nanometers.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The dye layer contains photo sensitization dye chosen from ruthenium-based pyridine composition, porphyry composition, phthalocyanine composition and nonmetal organic dye. The aqueous solution of alcohol contains ethanol, isopropanol or glycol. The dispersant is acetylacetone. The pore creating material is polyethylene glycol. Preferred Process: The deposition involves adding platinum anode and cathode conduction bottom into aqueous solution of co-deposition solution containing semiconductor grains, water-soluble metal salt, dispersant and alcohol. The weight ratio of aqueous solution of semiconductor grains, water-soluble metal salt, dispersant and alcohol are 100-200:1-2:1-2:500-1000. The multi-hole semiconductor layer is prepared by coating serum of semiconductor grains, conduction grains, dispersant, pore creating material and emulsifier on compaction semiconductor layer, and sintering at 450-600 degrees C for 20-80 minutes.