TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Device: The connector is electrically isolated from the lamina. It is in electrical communication with a wire on second photovoltaic device. The device further comprises one or more layers disposed between the first surface of the lamina and the conductive layer, and the aperture passing through the layers. It further comprises one or more layers disposed upon the second surface of the lamina, the aperture passing through the layers. It also comprises a receiver element secured to the conductive layer so that the conductive layer is located between the receiver element and the first surface of the lamina. The device further comprises a wire disposed above the second surface of the lamina. The wire is coupled to the lamina at the second surface. The wire is in electrical communication with a second conductive layer on a second photovoltaic device. The aperture extends generally circumferentially at the lamina for edge isolation. The width of the aperture is 50-100 mu m. Preferred Method: Manufacturing a photovoltaic assembly further comprises electrically linking the connector from the conductive layer to a wire on a second photovoltaic device. The aperture extends generally circumferentially at the lamina for edge isolation. The method further comprises forming a wire above the second surface of the lamina. Providing a lamina further comprises: (a) implanting gas ions through a donor wafer surface of a donor wafer to form a cleave plane within the donor wafer, the donor wafer is doped to a first conductivity type; (b) bonding the donor wafer surface with cleave plane formed to a receiver element with the conductive layer interposed between the donor wafer surface and the receiver element; and (c) exfoliating the donor wafer along the cleave plane thus forming the lamina. The method further comprises doping the donor wafer through the donor wafer surface prior to implanting step. It also comprises texturing the donor wafer surface before the bonding step. It further comprises depositing one or more layers upon the donor wafer surface prior to the bonding step.