NOVELTY - Manufacturing a layered film involves a process (A) for forming a particle layer of at least one types of particles consisting mainly of a metal oxide and/or a metal hydroxide; and process (B) for forming, using a reaction solution which includes at least one types of metal ions, metal oxide layer consisting mainly of an oxide of the types of metal ions on the particle layer to cover the particle layer without any cracks by a liquid phase method under a pH condition in which a portion of the particles remains without being dissolved by reaction solution.    USE - For manufacturing a layered film e.g. semiconductor film (claimed).    ADVANTAGE - The method provides a technology for forming a metal oxide film covering an underlayer without any cracks under a moderate pH condition of a pH value of 3-8.    DETAILED DESCRIPTION - Manufacturing a layered film involves a process (A) for forming a particle layer of at least one types of particles consisting mainly of a metal oxide and/or a metal hydroxide; and process (B) for forming, using a reaction solution which includes at least one types of metal ions, metal oxide layer consisting mainly of an oxide of the types of metal ions on the particle layer to cover the particle layer without any cracks by a liquid phase method under a pH condition in which at least a portion of the particles remains without being dissolved by the reaction solution, where the layered film having layered structure of the particle layer and the metal oxide layer is manufactured, where the major component of the metal oxide layer is zinc oxide; and major component of the particle layer is zinc oxide. INDEPENDENT CLAIMS are included for the following:    (1) manufacturing a photoelectric conversion device having a layered structure of a lower electrode, a photoelectric conversion semiconductor layer that generates a current by absorbing light, buffer layer, light transparent conductive layer, and an upper electrode on a substrate, where the buffer layer and/or the light transparent conductive layer is manufactured by the layered film manufacturing method; and    (2) photoelectric conversion device having a layered structure of a lower electrode, a photoelectric conversion semiconductor layer that generates a current by absorbing light, a buffer layer, a light transparent conductive layer, and an upper electrode on a substrate (10), where major component of photoelectric conversion layer is chalcopyrite compound semiconductor. The chalcopyrite compound semiconductor is formed of group Ib element (preferably copper and silver), group IIIb element (aluminum gallium and indium), and group VIb element (preferably sulfur, selenium and tellurium); and    (3) solar cell apparatus, comprising the photoelectric conversion device.