NOVELTY - Manufacture of double-sided copper-indium-gallium-selenium (CuInGaSe) thin film solar cell component involves simultaneously sputtering and depositing transparent conductive fluorinated tin oxide back electrodes on two sides of glass substrate; separately depositing CuInGaSe absorbing layers on back electrodes by evaporation; simultaneouly depositing zinc (sulfide, oxide, hydroxide) buffer layers on absorbing layers using chemical water bath method; mechanically scribing; and simultaneouly sputtering and depositing transparent conductive indium-doped tin oxide electrodes on buffer layers.    USE - Method for manufacturing double-sided CuInGaSe thin film solar cell component.    ADVANTAGE - The method is simple and pollution free, and improves absorption of light energy of CuInGaSe absorbing layers. The solar cell component has simple structure and high photoelectric conversion.    DETAILED DESCRIPTION - Manufacture of double-sided CuInGaSe thin film solar cell component involves:    (A) simultaneously sputtering and depositing transparent conductive back electrodes with thickness of 0.7-1 mu m on two sides of glass substrate using two fluorinated tin oxide (SnO2:F) targets, and separately laser scribing the back electrodes;    (B) performing evaporation using Cu, In, Ga and Se to separately deposit CuIn1-xGaxSe2 absorbing layers with thickness of 1-1.5 mu m on back electrodes, in which during evaporation, the liner temperature is controlled at 400-510 degrees C, and the atom ratio of Cu/(In+Ga) in wide-band and narrow-band absorbing layers is 0.85-0.95 respectively;    (C) using chemical water bath method to simultaneously deposit zinc (sulfide, oxide, hydroxide) (Zn (S, O, OH)) buffer layers with thickness of 50-100 nm on absorbing layers, in which the water bath temperature is controlled at 80-90 degrees C;    (D) separately mechanically scribing the absorbing layers and buffer layers;    (E) simultaneously sputtering and depositing transparent conductive electrodes with thickness of 300-600 nm on buffer layers using two indium-doped SnO2 (SnO2:In) targets;    (F) mechanically scribing the absorbing layers, buffer layers and transparent electrodes; and    (G) separately welding four bus bars on forward and reversed back electrodes and transparent electrodes, separately welding a leadwire on each bus bar, placing thin film solar cell in front of rolling platform and laminating together with covering film, adhesive layer and back covering film, and finally fixing a frame on component.    x=greater than 0.5 in wide-band absorbing layer; and less than 0.35 in narrow-band absorbing layer.