NOVELTY - The process comprises applying a gate electrode on a substrate (7), applying a dielectric layer on top of the gate electrode and the substrate, applying a conducting material on top of the dielectric layer by an magnetron sputter ion plating process or closed field unbalanced magnetron sputter ion plating process followed by structuring using standard photolithography techniques to form the S/D electrodes, and applying a semiconductor layer on top of or between S/D electrodes. The magnetron sputter ion plating is closed field unbalanced magnetron sputter ion plating.    USE - The process of depositing a conducting material onto an organic material e.g. dielectric material by magnetron sputter ion plating is useful for manufacture of an optical, electrooptical or organic electronic device or a component (all claimed), where the organic electronic device or a component comprises electrooptical displays, liquid crystal displays, optical information storage devices, electronic devices, organic semiconductors, organic field effect transistors in an display devices and logic capable circuits, integrated circuits, organic thin film transistors, radio frequency identification tags, organic light emitting diodes, organic light emitting transistors, electroluminescent displays, organic photovoltaic devices, organic solar cells, organic laser diodes, organic integrated circuits, lighting devices, flat panel displays, sensor devices, electrode materials, photoconductors, photodetectors, electrophotographic recording devices, capacitors, charge injection layers, Schottky diodes, planarizing layers, antistatic films, conducting substrates, and conducting patterns.    ADVANTAGE - The process is capable of rapidly, economically and effectively manufacturing the organic electronic device by uniform and effective deposition of a metal or conductive layer onto the organic layer without damage to the organic layer and any additional processing steps.    DETAILED DESCRIPTION - The process comprises applying a gate electrode on a substrate (7), applying a dielectric layer on top of the gate electrode and the substrate, applying a conducting material on top of the dielectric layer by an magnetron sputter ion plating process or closed field unbalanced magnetron sputter ion plating process followed by structuring using standard photolithography techniques to form the S/D electrodes, and applying a semiconductor layer on top of or between S/D electrodes. The magnetron sputter ion plating is closed field unbalanced magnetron sputter ion plating. A magnetron sputter ion plating system comprises holding unit for supporting a substrate to be coated, an electric field unit generating an electric field directed towards the substrate, and a magnetic field unit comprising two magnetrons (1, 2). Each magnetron has an inner pole and an outer pole. The outer pole has a polarity opposite to the inner pole. The substrate is provided in the holding unit, and is electrically biased by the electric field to be a cathode so as to attract ions to the substrate. One of the magnetrons is an unbalanced magnetron. The outer pole of the magnetron and the outer ring pole of another adjacent magnetron have opposite polarity, and are near enough to each other so that: a magnetic field extends between the outer poles to prevent escape of ionizing electrons between the adjacent magnetrons; and the electrons are not lost to increase the ionization at the electrically biased substrate. The magnetic field unit generates a plasma holding field. The plasma holding field is generated by direct magnetic linkage between the outer poles of the adjacent magnetrons. The substrate is inside the plasma holding field. The organic material is an organic polymer or a cross-linked organic polymer, and has a permittivity 1.8-4. The layer of the sputtered conducting material has a thickness 5 nm to 1 mu m. An INDEPENDENT CLAIM is included for an optical, electrooptical or organic electronic device or a component.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a closed field unbalanced magnetron sputter ion plating apparatus.    Magnetrons (1, 2)    Outer ring magnets (3, 5)    Inner core magnet (4)    Substrate (7)    Soft iron backing plate. (9)