NOVELTY - Composition (A, B or C) is applied on surface of a substrate (5) in inert gas atmosphere, and formed coating film is heated to form doped zinc oxide film. The zinc oxide film has average visible ray transmittance of 80% or more and volume resistivity of less than 8x 10-2 Omega .cm. The composition (A) contains a product produced by adding water to a solution of an organozinc compound, in mixed organic solvent or electron-donating organic solvent, and partially hydrolyzing organozinc compound.    USE - Manufacture of doped zinc oxide film used for antistatic thin film, ultraviolet ray blocking thin film and transparent electrode thin film (all claimed). Uses include but are not limited to electrode film of dye-sensitized solar cell, compound semiconductor light emitting element, thin film transistor, buffer layer of copper indium gallium selenide (CIGS) solar cell.    ADVANTAGE - The zinc oxide thin film is easily formed with favorable visible ray transmittance, excellent electroconductivity and low volume resistivity.    DETAILED DESCRIPTION - Composition (A, B or C) is applied on surface of a substrate in inert gas atmosphere, and formed coating film is heated to form doped zinc oxide film. The zinc oxide film has average visible ray transmittance of 80% or more and volume resistivity of less than 8x 10-2 Omega .cm. The composition (A) contains a product produced by adding water to a solution of an organozinc compound of formula: R1-Zn-R1 (I), in mixed organic solvent (4-12 %mass) or electron-donating organic solvent having boiling point of 110 degrees C or more, and partially hydrolyzing organozinc compound. The mass ratio of organic solvent with respect to organozinc compound is 0.4-0.8. The mixed organic solvent contains an electron-donating organic solvent having boiling point of 110 degrees C or more as main component. The composition (B) is obtained by adding organic IIIB group element compound of formula: R2-M(-R4)-R3.(L)n (II), to the composition (A). The molar ratio of III group element compound with respect to organozinc compound is 0.005-0.1. The composition (C) contains product obtained by adding water to solution obtained by dissolving organozinc compound and organic IIIB group element compound (II) or of formula: McXd.aH2O (III), in electron-donating organic solvent or its mixed organic solvent, and partially hydrolyzing organozinc compound. The molar ratio of compound (II) with respect to organozinc compound is 0.005-0.09. The molar ratio of water with respect to organozinc compound is 0.4-0.8. The amount of organic solvent with respect to total amount of organozinc compound and compound (II) is 4-12 %mass.    R1=1-7C linear or branched alkyl;    M=III group element;    R2-R4=H, linear or branched 1-7C alkyl, linear or branched 1-7C alkoxy, carboxylic acid or acetylacetonato;    L=coordinating organic compound containing nitrogen, oxygen or phosphorus;    n=0-9;    X=halo, nitric acid or sulfuric acid;    c=1 or 2;    d=3;and    a=0-9.    An INDEPENDENT CLAIM is included for composition for forming zinc oxide film, which contains organozinc compound, organic IIIB group element compound, and electron-donating organic solvent of formula: R20-M(-R40)-R30.    R20,R30,R40=H or linear or branched 1-7C alkyl.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of spray film-making apparatus.    Spray bottle (1)    Substrate holder (2)    Spray nozzle (3)    Compressor (4)    Substrate (5)