NOVELTY - Fabricating a bifacial solar cell, comprises: diffusing phosphorus onto a front surface of a silicon substrate to form a front surface junction and onto a back surface of the silicon to form a back surface junction; removing a phosphor-silicate glass (PSG); depositing a front surface passivation and anti-reflection (AR) dielectric layer onto the n+ layer; applying a back surface contact grid; applying a front surface contact grid; firing the back surface contact grid; and firing the front surface contact grid.    USE - The method is useful for fabricating a bifacial solar cell (claimed).    ADVANTAGE - The method has simple manufacturing process and reduces manufacturing cost of a bifacial solar cell.    DETAILED DESCRIPTION - Fabricating a bifacial solar cell, comprises: diffusing phosphorus onto a front surface of a silicon substrate to form a front surface junction and onto a back surface of the silicon to form a back surface junction; removing a phosphor-silicate glass (PSG) formed during the phosphorus diffusing step; depositing a front surface passivation and anti-reflection (AR) dielectric layer onto the n+ layer and a back surface passivation and AR dielectric layer onto the back surface of the silicon substrate; applying a back surface contact grid; applying a front surface contact grid; firing the back surface contact grid; and firing the front surface contact grid. An INDEPENDENT CLAIM is a bifacial solar cell, comprising: a silicon substrate with a front surface and a back surface; an active region of a first conductivity type located on at least a portion of the front surface of the silicon substrate; a first dielectric layer deposited on the active region; a second dielectric layer deposited on the back surface of the silicon substrate; a first contact grid applied to the first dielectric layer, the first contact grid comprised of a first metal, where after a firing step the first contact grid is alloyed through the first dielectric layer to the active region; and a second contact grid applied to the second dielectric layer, the second contact grid comprised of a second metal, where after the firing step the second contact grid is alloyed through the second dielectric layer to the back surface of the silicon substrate.