NOVELTY - A titanium-based layer is coated (11) on a ceramic substrate, (n+)-(p-)-(p+) laminate (I) is provided (12) on the titanium-based layer, the laminate (I) is passivated (13), n-i-p laminate is provided (14) on the (n+)-(p-)-(p+) laminate (I), p-type ohmic contact is provided (15) by etching a portion of n-i-p laminate using potassium hydroxide solution, n-type ohmic contact is provided (17), and anti-reflection layer containing silicon carbide/silica is formed (16) using a patterned mask on the n-type amorphous silicon carbide layer, to manufacture tandem-type solar cell.    USE - Manufacture of tandem-type solar cell.    ADVANTAGE - The tandem-type solar cell exhibits high photoelectric conversion efficiency and excellent stability.    DETAILED DESCRIPTION - A titanium-based layer is provided on a ceramic substrate, (n+)-(p-)-(p+) laminate (I) is provided on the titanium-based layer, the laminate (I) is passivated using plasma-enhanced chemical vapor deposition apparatus, n-i-p laminate is provided on the (n+)-(p-)-(p+) laminate (I), p-type ohmic contact is provided by etching a portion of n-i-p laminate by patterned mask using potassium hydroxide solution, n-type ohmic contact is provided, and anti-reflection layer containing silicon carbide/silica is formed using a patterned mask on the n-type amorphous silicon carbide layer, to manufacture tandem-type solar cell. Dichlorosilane and diborane are disposed on the titanium-based layer using chemical vapor deposition device under atmospheric pressure, such that an epitaxial growth of (p+)-type back surface field layer is carried out on the titanium-based layer. Then, the processing temperature is increased to enable epitaxial growth of (p-)-type light-soaking layer on (p+)-type back surface field layer. A (n+)-type diffusive deposition of phosphine is carried out on (p-)-type light-soaking layer, and (n+)-type emitter is formed on the (p-)-type light-soaking layer, to obtain (n+)-(p-)-(p+) laminate (I). The passivation of laminate (I) is carried out by filling dangling bonds of silicon atom on the surface of (n+)-type emitter and on crystalline boundaries of (p+)-type back surface field layer and (p-)-type light-soaking layer using argon-doped silicon carboxynitride (SiCNO:Ar) plasma. Dichlorosilane and diborane are disposed on (n+)-type emitter using chemical vapor deposition device to form p-type amorphous silicon carbide layer on (n+)-type emitter. The p-type amorphous silicon carbide layer is inter-doped with non-reactive gas, and n-type diffusive deposition of phosphine is carried out on the formed i-type amorphous silicon carbide intrinsic layer, and n-type amorphous silicon carbide layer is formed, to obtain n-i-p laminate on the laminate (I). The n-type ohmic contact is formed by providing titanium/palladium/silver layer on n-type amorphous silicon carbide layer using patterned mask, and annealing the titanium/palladium/silver layer in argon.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of manufacturing method of tandem-type solar cell.    Coating ceramic substrate with titanium-based layer (11)    Providing n-p-p laminate (12)    Passivating n-p-p laminate (13)    Providing n-i-p laminate (14)    Providing p-type ohmic contact (15)    Forming anti-reflection layer (16)    Providing n-type ohmic contact (17)