NOVELTY - Solar cell absorber layer (CuxZny(Gp14)z(Gp16)w) is prepared by depositing primary structure on substrate, primary structure having first layer (121) of copper (Cu), second layer (122) of zinc (Zn) and third layer (123) of Gp14; and forming secondary structure by exposing primary structure to fourth layer having Gp16 element, reacting primary structure with fourth layer to form secondary structure, secondary structure having first, second, third and fourth layers.    USE - Method of preparing layer of CuxZny(Gp14)z(Gp16)w (claimed).    ADVANTAGE - The method provides precursor materials significantly less expensive and toxic than CuInxGa(1-x)S, Se2 (CIGS) compounds, and the performance is inferior to that of the CIGS material.    DETAILED DESCRIPTION - Preparation of solar cell absorber layer (CuxZny(Gp14)z(Gp16)w) comprises depositing primary structure on substrate, primary structure having first layer (121) of copper (Cu), second layer (122) of zinc (Zn) and third layer (123) of Gp14 in stoichiometric ratio x:y:z, where x is y+z and x/(y+z) at 0.6-1.4, and y/(y+z) at 0.25-0.7; and forming secondary structure by exposing primary structure to fourth layer having Gp16 element, reacting primary structure with fourth layer to form secondary structure, secondary structure having first, second, third and fourth layers substantially in stoichiometric ratio x:y:z:w, wherein primary structure having layer of first layer, layer of second layer, layer of third layer and at least a further layer of first, second or third layers, immediately adjacent layers of the primary structure different layers to one another. The x/(y+z) is 0.6-1.4, y/(y+z) is 0.25-0.7, and w/(x+y+z) is 0.8-1.2    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the primary structure formed during fabrication of an absorber layer, the primary structure comprising nine layers each layer having a single metallic component.    Cell structure (100)    Soda lime glass substrate (102)    First layer (121)    Second layer (122)    Third layer (123)    Conductive back contact layer (140)