NOVELTY - The method comprises depositing a sequence of layers made of semiconductor material on a semiconductor growth substrate (101) to form a solar cell including a subcell composed of a group IV/III-V hybrid alloy, and removing the semiconductor growth substrate. The subcell is composed of germanium deposited over the subcell. The sequence of layers includes a first subcell having a band gap of 0.91-0.95 eV, and a second subcell having a band gap of 1.13-1.24 eV. The step of depositing the sequence of layers includes forming the first solar subcell on the substrate.    USE - The method is useful for manufacturing a solar cell, which is useful in satellite and other space related applications.    ADVANTAGE - The method is capable of effectively manufacturing a solar cell with light weight and high energy conversion efficiency, and reduces the interface recombination loss and improves the photogenerated current densities of the solar cell.    DETAILED DESCRIPTION - The method comprises depositing a sequence of layers made of semiconductor material on a semiconductor growth substrate (101) to form a solar cell including a subcell composed of a group IV/III-V hybrid alloy, and removing the semiconductor growth substrate. The subcell is composed of germanium deposited over the subcell. The sequence of layers includes a first subcell having a band gap of 0.91-0.95 eV, and a second subcell having a band gap of 1.13-1.24 eV. The step of depositing the sequence of layers includes forming the first solar subcell on the substrate having a first band gap, forming the second solar subcell over the first subcell having a second band gap smaller than the first band gap, forming a third solar subcell over the second solar subcell having a third band gap smaller than the second band gap, forming a fourth solar subcell having a fourth band gap smaller than the third band gap that is lattice matched to the third solar subcell, forming a fifth solar subcell over the fourth solar subcell having a fifth band gap smaller than the fourth band gap, forming a sixth solar subcell over the fifth solar subcell having a sixth band gap smaller than the fifth band gap, and forming a seventh solar subcell over the sixth solar subcell having a seventh band gap smaller than the sixth band gap. The method further comprises applying a bonding layer over the sequence of layers of semiconductor material and attaching a surrogate substrate to the bonding layer, and forming a window layer (105) and a back surface field layer composed of the group IV/III-V hybrid alloy adjacent to the subcell composed of the group IV/III-V hybrid alloy. The semiconductor substrate is removed after the surrogate substrate is attached by grinding, etching, or epitaxial lift-off. A junction is formed in the group IV/III-V hybrid alloy to form a photovoltaic subcell by the diffusion of arsenic and/or phosphorus into the hybrid alloy layer. An INDEPENDENT CLAIM is included for a multijunction solar cell.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the solar cell.    Substrate (101)    Buffer layer (102)    Etch stop layer (103)    Semiconductor contact layer (104)    Window layer. (105)