NOVELTY - The method comprises applying excess of liquid (8) to an area of a surface of semiconductor component (10), where the functional layer has a layer thickness d1 and the liquid required for forming the functional layer having the thickness di has a layer thickness d2. The functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the region of the surface in excess with a layer thickness d3 with d3 greater than d2 and that excess liquid is removed from the surface in a contactless manner.    USE - Method for producing a functional layer on region of a surface of semiconductor component such as solar cell.    ADVANTAGE - The method ensures rapid production of smooth functional layer on region of a surface of semiconductor component with improved thickness.    DETAILED DESCRIPTION - The method comprises applying excess of liquid (8) to an area of a surface of semiconductor component (10), where the functional layer has a layer thickness d1 and the liquid required for forming the functional layer having the thickness di has a layer thickness d2. The functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the region of the surface in excess with a layer thickness d3 with d3 greater than d2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d2 or approximately the thickness d2. The contactless removal is carried out through applying liquid by a gas stream in simultaneously relative movement between the gas stream and the semiconductor component. On the semiconductor component, a layer is formed with functional chemical and/or physical properties that exist through the effect of heat and/or reactive gas atmosphere, and/or contains oxygen, nitrogen, carbon dioxide, hydrocarbons to change characteristics of the surface of the component. A thermal treatment is carried out after the removal of the fluid. The functional layer is formed from several layers and chemically reacts with the material of the semiconductor component, which is dipped in the fluid for applying the fluid, coated with the fluid and/or sprayed with the fluid. A liquid containing surfactants with hydrophobic characteristics is used in the area of the surface of the semiconductor component. The gas stream is removed from the area of the surface of the liquid up to a remaining layer thickness of 0.5-1.9 mu m. The gas stream is adjusted under an angle beta with 1 degrees greater than or equal to beta greater than or equal to 90 degrees sloped to plain stretched from the surface. The semiconductor component is subjected over its total transversal extension with the gas stream transverse to relative movement direction between the semiconductor component and the gas stream or is subjected with partial gas stream transverse to relative movement between the semiconductor component and the gas stream, where the partial gas stream comprises gas speed and/or the gas volume flow rate. The gas stream is radiated over a discharge opening in the form of a slit nozzle or single nozzle arranged along a straight line on the area of the surface of the semiconductor component. The gas stream appears with a speed (v) with 1 m/s greater than or equal to v greater than or equal to 25 m/s on the area of the surface of the semiconductor component. The semiconductor component is moved related to a base preferential direction under angles deviating from one another relative to the gas stream. For obtaining the function layer of 30-50 mu m, parameters such as interval to component surfaces of 20-30 mm, gas speed of 5-10 m/s, gas speed homogeneity over the width of the use with a variation width of maximum plus minus 5%, volume stream per cm substrate width of 0.5-1.5 Nm3/h, angle of attack of flow of 45-60 degrees , feed rate velocity of the component of 0.7-1.5 m/s, and temperature of 20-25 degrees C with a homogeneity of plus minus 1-2 degrees C are selected. For producing a homogeneous layer thickness of the function layer of 0.5-1.9 mu m, parameters such as interval to component surfaces of 5-10 mm, gas speed of 10-18 m/s, gas speed homogeneity over the width of the use with a variation width of maximum plus minus 5%, volume stream per cm substrate width of 1.5-2.0 Nm3/h, angle of attack of flow of 80-90 degrees , and feed rate velocity of the substrate of 0.7-1.5 m/s are selected. For obtaining a layer thickness of 15 mu m plus minus 5 mu m, parameters such as interval to component surfaces of 10-15 mm, gas speed of 10-15 m/s, gas speed homogeneity over the width of the use with a variation width of maximum plus minus 5%, volume flow per cm substrate width of 1.0-1.5 Nm3/h, angle of attack of flow of 70-80 degrees , feed rate velocity of the substrate of 0.7-1.5 m/s, and temperature of 20-25 degrees C with a homogeneity of plus minus 1-2 degrees C are selected. The surface of the substrate is equipped with local structured functional layer. The surface is covered with the functional layer over an area of 5-20% of the component. The semiconductor component is used with a substrate in the form of mono- or multicrystalline silicon plate, which is produced according to edge-defined film-fed growth process. The component is p- or n-doped mono- or multicrystalline silicon disk with a thickness of 40-500 mu m or mono- or multicrystalline silicon disk with a thickness of 40-500 mu m or rectangular mono- or multicrystalline silicon disk with layer thickness of 40-220 mu m and an edge length of 120-160 mm. A functional layer is subjected on the surface that is chemical roughened during coating of the surface. The area of the surface of the semiconductor component is subjected with gas stream with gas volume flow rate and/or gas speed. The semiconductor component comprises a rubbing end in flow direction of the excessive fluid to be removed on its end, where the rubbing end is formed as broken edge and/or has bent and/or curved progress. The function layer is a doping material source for producing a diffusion profile in the semiconductor component. The diffusion profile forms a pn-transition in the semiconductor component. An INDEPENDENT CLAIM is included for an arrangement for the production of functional layer.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of an arrangement for the production of functional layer.    Liquid (8)    Semiconductor component (10)    Dip basin (12)    Gas suction device (18)    Connection edge. (50)