NOVELTY - Wiring member comprises: substrate (1); copper wiring layer (3) having electrical resistivity not greater than 4x 10-6 Omega .cm in directly or indirectly contact with substrate; aluminum diffusion layer (4), contiguous to copper wiring layer, having aluminum concentration gradient descending towards inside; and aluminum oxide layer contiguous to and covering aluminum diffusion layer, where ratio of thickness of copper wiring layer to thickness of aluminum diffusion layer is 1.5-5.    USE - As wiring member, useful in electronic device selected from plasma display panel, liquid crystal display panel, and solar cell panel (claimed).    ADVANTAGE - The wiring member provides improved wiring member having low resistance, low cost and high resistance to calcining oxidation in oxidizing atmosphere at high temperatures; and is useful in flat display panels; where in prior art wiring members although copper wires are covered with copper film containing aluminum to suppress oxidation of copper wiring of electronic circuits such as large scale integrated device (LSI) during heat treatment at around 400 degrees C; if these elements are added to copper, points where additive elements are present become centers of scattering of electrons so that electrical resistivity increases; so that high oxidizing resistance and low electrical resistivity are hard to coexist i.e. even if copper wires are covered with materials containing materials with resistance to oxidation, it is impossible to suppress oxidation at time of heat treatment of 600-700 degrees C when thickness or its composition is insufficient. As in wiring member ratio of thickness of copper wiring layer to thickness of aluminum diffusion layer is 1.5-5, appearance electrical resistivity of aluminum diffusion layer and copper wiring layer are maintained to not greater than 4x 10-6 Omega .cm. Where aluminum-copper alloy containing aluminum (50 wt.%) and copper (50 wt.%) is used as anti-oxidation layer, aluminum-copper alloy layer remains, while thickness of layer decreases due to aluminum diffusion, ratio of thickness of copper layer to aluminum diffusion layer is the same, and it is possible to impart extremely high resistance to oxidation to wiring. With wiring member comprising copper (formed using thin film of Cr on glass substrate having copper film of 3 mu m and 120 nM and 50 wt.% Cu-50 wt.% Al film, patterned to form copper wiring layer with line width of 100 mu m and wiring height of 3 mu m), it is found that the wiring does not change its outer appearance between before-heat treatment and after-heat treatment at 600 degrees C. Oxidation is not observed with eyes. When resistance of wiring is measured to find that resistance before heat treatment is 1.9x 10-6 Omega .cm and resistance after heat-treatment is 3.7x 10-6 Omega .cm. The resistance after heat-treatment increased little, but is sufficiently low enough to be utilized as wiring. Though such result is obtained by calcination in air, same oxidation resistance is obtained when material such as dielectric glass is coated on the Cu-Al film of wiring. Hence, with improved wiring member, it is possible to obtain wiring member having high resistance to calcining oxidation at high temperatures in an oxidizing atmosphere and having low electrical resistivity, and it is unnecessary to adopt such high-cost processes for treatment of electronic devices as in reducing atmosphere or vacuum atmosphere. Further, since expensive rare metals such as silver are not used, material cost is low and steady supply of materials can be possible.    DETAILED DESCRIPTION - A wiring member comprises: substrate (1); copper wiring layer (3) having electrical resistivity not greater than 4x 10-6 Omega .cm in directly or indirectly contact with substrate; aluminum diffusion layer (4), contiguous to copper wiring layer, having aluminum concentration gradient descending towards inside; and aluminum oxide layer contiguous to and covering aluminum diffusion layer, where ratio of thickness of copper wiring layer to thickness of aluminum diffusion layer is 1.5-5. The wiring member further comprises bonding layer between substrate and copper wiring. The appearance electrical resistivity of aluminum diffusion layer and copper wiring layer is not greater than 4x 10-6 Omega .cm. The wiring member further comprises aluminum-copper alloy layer contiguous to aluminum diffusion layer; and aluminum oxide layer, contiguous to aluminum-copper alloy layer, covers aluminum diffusion layer. The aluminum diffusion layer comprises several aluminum diffusion layers, contiguous to each side of copper wiring layer, where each of aluminum diffusion layers has aluminum concentration gradient descending towards inside; aluminum-copper alloy layers contiguous to aluminum diffusion layers; aluminum oxide layers each covering each of aluminum diffusion layers; and dielectric layer in which wiring is buried. INDEPENDENT CLAIMS are included for the following:    (1) manufacturing wiring member involving: forming copper layer having electrical resistivity of not greater than 4x 10-6 Omega .cm in directly or indirectly contact with substrate; forming anti-oxidation layer selected from aluminum or aluminum-copper alloy layer having thickness of 50-200 nm on copper wiring layer, where aluminum-copper alloy contains aluminum ( greater than or equal to 50 wt.%); patterning wiring layer and anti-oxidation layer; and heating wiring layer and anti-oxidation layer to cause aluminum in anti-oxidation layer to be diffused into copper wiring layer and oxidize aluminum so as to obtain ratio of thickness of copper wiring layer to thickness of aluminum diffusion layer of 1.5-5; and    (2) electronic device comprising: wiring member comprising substrate, copper wiring layer having electrical resistivity of not greater than 4x 10-6 Omega .cm in directly or indirectly contact with substrate; aluminum diffusion layer contiguous to copper wiring layer having aluminum concentration gradient descending towards inside; aluminum oxide layer contiguous to and covering aluminum diffusion layer, where ratio of thickness of copper wiring layer to thickness of aluminum diffusion layer of 1.5 -5; and electronic element that is electrically connected to wiring member.    DESCRIPTION OF DRAWING(S) - The figure shows cross sectional view of the wiring member.    Substrate (1)    Under layer on surface of substrate (2)    Copper wiring layer (3)    Aluminum diffusion layer (4)