NOVELTY - The method comprises depositing a metal layer (9) on a surface of a semiconductor substrate (1), and heating the semiconductor substrate during the deposition at a temperature, at which a liquefaction of the semiconductor substrate takes place at an interface between the semiconductor substrate and the metal layer, where the metal layer is evaporated. The semiconductor substrate is kept with a substrate holder during the deposition, where a heat transfer between the semiconductor substrate and the substrate holder is avoided during the deposition.    USE - Method for metallizing a semiconductor substrate for producing solar cells (claimed).    ADVANTAGE - The method is capable of simply, easily and economically metallizing the semiconductor substrates without energy loss.    DETAILED DESCRIPTION - The method comprises depositing a metal layer (9) on a surface of a semiconductor substrate (1), and heating the semiconductor substrate during the deposition at a temperature, at which a liquefaction of the semiconductor substrate takes place at an interface between the semiconductor substrate and the metal layer, where the metal layer is evaporated. The semiconductor substrate is kept with a substrate holder during the deposition, where a heat transfer between the semiconductor substrate and the substrate holder is avoided during the deposition. The metal layer is deposited with a deposition rate and at a temperature of the metal vapor, which are sufficiently high, so that the semiconductor substrate heats itself by the deposition at the temperature, at which the liquefaction of the semiconductor substrate takes place at an interface between the semiconductor substrate and the metal layer. The metal layer is deposited with the stationary deposition rate of 100 nanometers per seconds. The semiconductor substrate is coated with an emission control layer (7), which reduces thermal energy radiation, before the deposition of the metal layer on a surface area, on which no metal layer is deposited. The semiconductor substrate is additionally heated by irradiating heat radiation during the deposition. The substrate holder is designed to heat the semiconductor substrate during the deposition. The semiconductor substrate is provided as silicon substrate of n-semiconductor type, where the metal layer is deposited as aluminum-containing layer. The semiconductor substrate is heated at a temperature of 577 degrees C during the deposition. INDEPENDENT CLAIMS are included for:    (1) a method for producing a solar cell; and    (2) a device for metallizing a semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of a process sequence of a method for metallizing a semiconductor substrate.    Semiconductor substrate (1)    Front surface (3)    Rear surface (5)    Emission control layer (7)    Metal layer. (9)