TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Arrays: In the array, the second horizontal scribing lines comprise a pair of second horizontal scribing lines that are formed adjacent to each of the first horizontal scribing lines. The second horizontal scribing lines are disposed between about 5 mu m and about 2000 mu m from each of the second horizontal scribing line formed in the TCO layer. The first horizontal scribing lines and the second horizontal scribing lines provide electrical isolation in a direction parallel to the vertical scribing lines formed on the substrate. The second horizontal scribing lines overlap with the first horizontal scribing lines formed in the TCO layer. The vertical scribing lines, the first horizontal scribing lines and the second horizontal scribing lines formed on the substrate are each formed by a laser scribing process. The laser scribing process used to form the first horizontal scribing lines uses a laser source having wavelength between about 200 nm and about 2000 nm. It also comprises: a substrate having a TCO layer, a film stack and a back metal layer consecutively formed; first vertical scribing lines and first horizontal scribing lines formed in the TCO layer to form rectangular patterns in the TCO layer; second vertical scribing lines formed in the film stack and the back metal layer, where the second vertical scribing lines are aligned parallel to the first vertical scribing lines; second horizontal scribing lines formed in the film stack and the back metal layer, where the second horizontal scribing lines are formed in pairs adjacent to each of the first horizontal scribing lines and intersected with the second vertical scribing lines formed in the film stack and the back metal layer. It further comprises: third vertical scribing lines formed in the film stack, where the third vertical scribing lines do no intersect with the first and the second horizontal scribing lines. Each of the second horizontal scribing line is positioned about 5 mu m and about 2000 mu m from the first horizontal line. The pairs of the second horizontal scribing lines are overlapping with the first horizontal scribing lines formed in the TCO layer. The overlapping second horizontal scribing lines formed over the first horizontal scribing lines have a width between about 10 mu m and about 4000 mu m. The pairs of the second horizontal scribing lines are overlapping and aligned with the first horizontal scribing lines to form a single channel passing though the TCO layer, the film stack and the back metal layer. The overlapping and aligned second horizontal scribbling lines extend further down to an upper surface of the substrate having a depth between about 0.01 mu m and about 200 mu m from the upper surface of the substrate. The first horizontal scribing lines and the first vertical scribing lines are formed by a first laser source and the second horizontal scribing lines and the second vertical scribing lines are formed by a second laser source, where the first laser source emits electromagnetic radiation having a first wavelength different from a second wavelength of the electromagnetic radiation emitted from the second source. The first wavelength is about 1064 nm and the second wavelength is about 532 nm. Each of the second horizontal scribing lines formed in the film stack and the back metal layer are substantially equally spaced. Each of the second horizontal scribing lines formed in the film stack and the back metal layer are unevenly distributed. It also comprises: a substrate having a TCO layer, a film stack and a back metal layer consecutively formed adapted to form solar cell arrays on the substrate; and vertical and horizontal partition lines formed in the TCO layer, the film stack and the back metal layer, where the horizontal partition lines formed on the substrate are adapted to reduce current flow present on each of the partitioned solar cell arrays, where the current flow reduced in each partitioned solar cell array is proportional to the number of the horizontal scribing lines formed on the substrate. The greater density of the horizontal scribing lines is formed on the substrate when a higher thickness of the film stack is formed on the substrate.