TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: Fabricating a multijunction PV cell further comprises etching the semiconductor layer to form a semiconductor contact, where the semiconductor contact layer is 200-500 nanometers thick. The method also comprises forming an antireflective coating layer comprising an oxide-based or nitride-based thin film on the junction having the largest bandgap. It further comprises forming a metal electrode on the semiconductor contact, where the metal electrode comprises an ohmic contact to the semiconductor contact. Preferably, the metal layer comprises nickel. The substrate comprises gallium arsenide or germanium. The flexible substrate comprises polyimide. The metal layer comprises a back contact for the multijunction PV cell. The junctions comprise 3 junctions, and a thickness of the stack comprising the junctions is less than 15 microns. The semiconductor layer is less than 10 microns thick. One or more of the junctions is under a compressive strain, where the compressive strain is induced by the tensile stress in the metal layer. The substrate comprises a seed layer located on a semiconductor substrate, an etch stop/release layer located on the seed layer, a second seed layer located on the etch stop/release layer, and an etch stop layer located on the second seed layer, where the junction having the largest bandgap is formed on the etch stop layer, and where the fracture is formed in the second seed layer. Each of the junctions comprises: (i) a contact layer, (ii) a window layer located on the contact layer, (iii) an emitter located on the window layer, (iv) a base layer located on the emitter, (v) a back surface field located on the base layer, (vi) a back contact located on the back surface field, and (vii) a tunnel junction located on the back contact. The method further comprises forming a cleave layer in the substrate, where the cleave layer is configured to determine the location of the fracture. The cleave layer comprises one of germanium tin (GeSn), a hydrogenated layer, or interface layer within the substrate. Preferred Multijunction PV Cell: The PV cell further comprises an antireflective coating layer comprising an oxide-based or nitride-based thin film on the junction having the largest bandgap, and a metal electrode on the semiconductor contact, where the metal electrode comprises an ohmic contact to the semiconductor contact.