NOVELTY - An optoelectronic device comprises at least one first electrode; at least one second electrode disposed opposite the at least one first electrode such that a gap is defined between the first electrode and the second electrode; and a three-dimensional array of nanorods (15) spanning the gap, where at least one nanorod is in contact with the first electrode and second electrode.    USE - For producing electrical current; as energy source in photodetector, and in photovoltaic cell (claimed); also used in solar cells.    ADVANTAGE - The optoelectronic device comprising nanorods that are suspended without interaction with their underlying material; provides high quality to minimize nonradiative recombination channels associated with defects and traps; semiconducting to eliminates quenching photoluminescence from metal-like nanorods; electrically isolated to avoids charge transfer; has adjustable diameter; has tunable density and used in controlled environment.    DETAILED DESCRIPTION - An optoelectronic device comprises at least one first electrode; at least one second electrode disposed opposite the at least one first electrode such that a gap is defined between the first electrode and the second electrode; and a three-dimensional array of nanorods (15) spanning the gap, where at least one nanorod is in contact with the first electrode and second electrode. The optoelectronic device further comprises a solid base (10) defining an indentation, where the first electrode, second electrode and the three dimensional array of nanorods are partially contained within the indentation. The solid base comprises insulating layer or is silicon. The nanorods are surrounded by a dielectric material. INDEPENDENT CLAIMS are included for following:    (1) an optoelectronic device substrate comprising a first electrode stack comprising several of stacked, spatially-separated first electrodes; and a second electrode stack comprising several of stacked, spatially-separated second electrodes disposed opposite the several of first electrodes, such that a gap is defined between the first and second electrode stack;    (2) making the optoelectronic device involving providing a solid base having a gap, depositing an array of semiconducting nanorods such that the three-dimensional array of nanorods spanning the gap, and depositing the first and second electrodes such that at least one nanorod is in contact with the first electrode and the second electrode;    (3) making the optoelectronic device substrate involving providing a solid base depositing a first electrode stack and a second electrode stack on the solid base;etching a gap defined between the first electrode stack and the second electrode stack; and depositing an array of semiconducting nanorods such that the array of semiconducting nanorods are located in, and spanning the gap where at least one nanorod is in contact with the first and second electrode stack.    DESCRIPTION OF DRAWING(S) - The figure shows fabrication of optoelectronic device.    Solid base (10)    Insulating layer (11)    Metal layer (13)    Isolated metal contact (14)    Nanorods (15)