NOVELTY - An amorphous/microcrystalline silicon laminated solar cell has transparent conductive film, amorphous silicon upper window layer, amorphous silicon upper intrinsic layer, amorphous silicon upper n-type layer, doped intermediate layer, microcrystalline silicon lower p-type layer, microcrystalline silicon lower intrinsic layer, microcrystalline silicon lower n-type layer, back reflection layer and back electrode layer, which are connected in series. The doped intermediate layer is aluminum-doped n-type zinc oxide/p-type doped hydrogenated microcrystalline silicon tunnel junction.    USE - Amorphous/microcrystalline silicon laminated solar cell.    ADVANTAGE - The amorphous/microcrystalline silicon laminated solar cell has improved light absorption efficiency and conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of amorphous/microcrystalline silicon laminated solar cell, which involves mounting glass/fluorine-doped tin oxide transparent conductive film in p-type vacuum chamber of plasma enhanced chemical vapor deposition system, forming amorphous silicon upper window layer in vacuum chamber using hydrogen-diluted borane as doping gas at methane-silane gas flow ratio of 1.2-3, forming amorphous silicon upper intrinsic layer by performing deposition of silane gas and hydrogen gas for 25-30 minutes, forming amorphous silicon upper n-type layer by performing deposition of hydrogen at flow rate of 60-80 sccm, silane gas at flow rate of 6-8 sccm and phosphine gas at flow rate of 8-10 sccm, forming aluminum-doped zinc oxide layer using aluminum-doped zinc oxide ceramic target as sputtering target material and argon gas as sputtering gas, forming heavily doped hydrogenated microcrystalline silicon layer using hydrogen-diluted borane as doping gas, forming microcrystalline silicon bottom p-type layer using borane gas, forming microcrystalline silicon bottom intrinsic layer using hydrogen gas and silane gas, forming microcrystalline silicon lower n-type layer, forming back reflection layer by magnetron sputtering method using aluminum-doped zinc oxide ceramic target as sputtering target material and argon gas as sputtering gas, and forming back electrode layer.