TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The cathode is a conductive material selected from metal, conductive compound, conductive polymer, conductive glass, and a layer of conductive material on a substrate selected from Si, SiO2, Si3N4, and steel. The cathode comprises both conductive and nonconductive materials with at least one conductive material exposed to the solution. The potential and current is a constant, and has a current density of -1 mA/cm2 to -100 mA/cm2. The cathode comprises a substrate for a solar device.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The I-III-VI compound is copper indium gallium selenide. The copper indium gallium selenide comprises indium (0-90 atomic%) and gallium (0-60 atomic%), with the provision that at least one of the indium and gallium is a positive atomic% greater than 0. The copper containing precursor is copper sulfate, the selenium containing precursor is selenium oxide, the indium precursor is indium sulfate, and the gallium precursor is gallium nitrate. The sulfur containing organic compound is at least one member selected from sulfonate, sulfonic acid, sulfinic acid, sulfinate, sulfonide, sulfinide, sulfide and disulfide. The phosphorus containing organic compound is at least one member selected from phosphonate, phosphonic acid, phosphinate, phosphinic acid, phosphonite and phosphinite. Preferred Bath: The bath comprises at least one inorganic chemical to provide conductivity of the solution selected from sodium sulfate, potassium nitrate, and sodium phosphate. The bath further comprises at least one organic compound as surfactant, where surfactant optionally contains sulfur or phosphorus. The bath comprises at least one organic or inorganic chemical to complex with the precursor chemicals selected from organic acids and ammonium salts. The bath comprises at least one organic or inorganic chemical to buffer the solution pH. The bath further comprises at least one organic or inorganic chemical to incorporate other elements into the film selected from C, B, N, O, S, H, Cl, Ag, Au, Cd, Zinc, Al, Te, Ge, Sn and As. Preferred Method: The temperature of the solution is 5-80 degrees C. The potential and current is controlled in a waveform comprising sweeps, pulses, pulse reverses, sinusoidal. The I-III-VI compound is annealed at a temperature higher than 20 degrees C after electroplating. The method of producing copper indium gallium selenide compound in a thin film form by electroplating, where the film has a composition gradient of gallium (0-60 atomic%) or a composition gradient of indium (0-90 atomic%) involves obtaining a bath comprising: water; a copper containing precursor dissolved in water; a selenium containing precursor dissolved in water; and at least one member selected from indium containing precursor dissolved in water, and/or a gallium containing precursor dissolved in water; and at least one member selected from sulfur-containing organic compound dissolved in water, where at least one sulfur atom directly bond with at least one carbon atom, and/or phosphorus-containing organic compound dissolved in water, where at least one phosphorus atom directly bond with at least one carbon atom; immersing a cathode and an anode into the solution; and applying a electric current or potential across the cathode and the anode to deposit a film of I-III-VI compounds in a thin film form on the cathode. The cathode is rotating with the rotation rate controlled. The temperature of the bath is controlled. EXAMPLE - A bath comprising a first solution containing 1.13 mmol/l CuSO4, 0.63 mmol/l In2(SO4)3, 1.88 mmol/l SeO2, 25 mmol/l Ga(NO3)3, 0.2 mol/l Na2SO4, 0.2 mol/l sodium diisopropyl naphthalene sulfonate (SDIPNS) and having pH of 2; and a second solution containing 4.5 mmol/l CuSO4, 2.5 mmol/l In2(SO4)3, 7.5 mmol/l SeO2, 25 mmol/l Ga(NO3)3, 0.2 mol/l Na2SO4, 0.2 mol/l SDIPNS and having pH of 2 was prepared. The plating was carried out at room temperature and at current density of -10 mA/cm2 to -20 mA/cm2, for 2 minutes. The compositions of the electroplated films were analyzed by photon induced x-ray emission (PIXE). The gallium content was controlled from 0 to 10.4% and the indium content was controlled from 10% to 25.7%.