TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: In the method above, moving alters an angle at which the particles impact the substrate, thus distributing channeling over the substrate. Moving comprises tilting the substrate around a first axis. Moving further comprises tilting the substrate along a second axis. The method further comprises offsetting a lattice of the substrate relative to the beam by a constant angle. The offsetting occurs around an axis different from the first axis. The lattice is offset by a miscut. It is also offset by inclining the surface region relative to the beam. The accelerated particles comprise hydrogen species, helium species, or a combination of hydrogen and helium species. The thickness of material to be detached is 10-200 mu m. In manufacturing a free-standing film from a bulk substrate, the pedestal is clamped to the platen utilizing a magnetic clamp device. The method further comprises, during the introduction of the particle beam into the surface of the bulk substrate, causing the mechanical element to impart a dithering motion to the platen. The mechanical element is configured to provide a relative incident angle between the particle beam and the top surface to reduce ion channeling effects. The particle beam comprises hydrogen species, or deuterium species, or helium species. The platen is provided with an upper surface inclined at an angle relative to the particle beam, the method further comprising causing the platen to engage with the pedestal so that the top surface of the bulk substrate is also inclined at the angle. The platen engages with the pedestal in a kinematic manner. The method further seats the pedestal within an open frame pallet prior to engagement of the pedestal and the plate. In fabricating a photovoltaic cell, at the points of impingement, the exposed surfaces are oriented substantially perpendicular to the beam, and the exposed surfaces are miscut relative to the primary crystal planes. The method also comprises subjecting the substrates to a dithering motion during the scanning of the beam. At the points of impingement, the primary crystal planes are also misaligned with the beam due at least in part to an inclination of the exposed surfaces relative to the beam. The inclination of the exposed surface results from a fixed tilting of the substrates. The inclination of the exposed surface also results from a dithering motion during the scanning of the beam. The inclination of the exposed surface results from a dithering motion of the substrates during the scanning of the beam. A timing of the dithering motion is coordinated with a timing of the scanning to misalign the primary crystal planes from the beam. Preferred Apparatus: The end station is configured to impart the dithering motion in two dimensions. The end station comprises: (i) a processing chamber; (ii) a frame moveably disposed within the processing chamber; and (iii) a platen pivotably attached to the frame, where the platen comprises a pivot tilt arm moveable to impart a dithering motion to the platen within the processing chamber. The platen comprises raised cooling blocks having inclined surfaces configured to engage respective pedestals supporting the substrates, upon movement of the frame within the processing chamber. The end station comprises a pallet configured to support substrates within the processing chamber. The particle accelerator comprises a DC particle accelerator. Preferred System: The clamp device comprises a magnetic clamp. In response to the automation signal, the platen is configured to undergo one or more mechanical operations selected from, rotating the platen, imparting a dithering motion to the platen, tilting the platen, and shuffling a position of the pedestal relative to another pedestal. The system further comprises an open frame pallet configured to secure the pedestal prior to and following engagement of the pedestal and the platen. The implant subsystem comprises an electrostatic accelerator accelerating the particle beam to an energy level of 0.5-5 MeV. The suitable orientation comprises ensuring a relative incident angle between the particle beam and the exposed top surface to reduce a channeling effect. The system further comprises one or more thermal radiation sources in thermal communication with the exposed top surface. It further comprises a sensing subsystem coupled respectively to the implant subsystem, the platen, and the bulk substrate, and configured to collect physical state information about the bulk substrate, and configured to deliver one or more sensor data associated with the physical state information to the controller.