NOVELTY - Photovoltaic device comprises: (a) a substrate; (b) a first electrode disposed on the substrate; (c) a photoelectric transformation layer disposed on the first electrode, where the photoelectric transformation layer comprises a light absorbing layer; and (d) a second electrode disposed on the photoelectric transformation layer; and where the light absorbing layer in the photoelectric transformation layer comprises a first sub-layer and a second sub-layer, each comprising hydrogenated amorphous silicon based material and a crystalline silicon grain respectively.    USE - The photovoltaic device is useful as a solar cell for converting sunlight energy into electrical energy.    ADVANTAGE - The photovoltaic device has low degradation rate and high stability efficiency.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a method of manufacturing a photovoltaic device comprising: (a) forming a first electrode on a substrate; (b) forming a photoelectric transformation layer on the first electrode in a chamber, where the photoelectric transformation layer comprises a light absorbing layer; and (c) forming a second electrode on the photoelectric transformation layer; where a hydrogen dilution ratio of each of source gases which are flown to the chamber is constant while the light absorbing layer is formed; and where, while the light absorbing layer is formed, a first voltage having a first frequency and a second voltage having a second frequency higher the first frequency are alternately supplied to an electrode having a nozzle formed in the chamber; and    (2) a method of manufacturing a photovoltaic device comprising: (a) forming a first electrode on a substrate; (b) forming a photoelectric transformation layer on the first electrode in a chamber, where the photoelectric transformation layer comprising a light absorbing layer; and (c) forming a second electrode on the photoelectric transformation layer; where flow rates of hydrogen and silane which are flown to the chamber are constant while the light absorbing layer is formed; and where, while the light absorbing layer is formed, a first voltage having a first frequency is continuously supplied to an electrode having a nozzle formed in the chamber, and where a second voltage having a second frequency higher the first frequency is alternately supplied to the electrode.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photovoltaic device.    Substrate (100)    First electrode (210)    Photoelectric transformation layer (230)    P-type semiconductor layer (231)    Light absorbing layer (233)    First sub-layer (233a)    Second sub-layer (233b)    N-type semiconductor layer (235)    Second electrode (250)    Protecting layer (300)