NOVELTY - The solar cell comprises a substrate (100), a protective layer (102) located over a first surface of the substrate, a first electrode (202) located over a second surface of the substrate, a p-type semiconductor absorber layer (301) located over the first electrode, an n-type semiconductor layer (302) located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The protective layer has a first emissivity of greater than 0.35 and a reactivity with a selenium-containing gas lower than that of the substrate.    USE - Used as a thin-film solar cell.    ADVANTAGE - The thin-film solar cell can be economically and energy efficiently manufactured with high reliability, large-scale production, reduced power consumption, long lifetime and improved performance.    DETAILED DESCRIPTION - The solar cell comprises a substrate (100), a protective layer (102) located over a first surface of the substrate, a first electrode (202) located over a second surface of the substrate, a p-type semiconductor absorber layer (301) located over the first electrode, an n-type semiconductor layer (302) located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The protective layer has a first emissivity of greater than 0.35 and a reactivity with a selenium-containing gas lower than that of the substrate, differs from the first electrode in composition, thickness, density, emissivity, and/or stress state, and has a non-uniform oxygen concentration profile. The first electrode has a second emissivity different from the first emissivity, and comprises a barrier layer (202B) of a transition metal nitride material located over the substrate. The protective layer comprises a carbon based material, which does not react with the selenium-containing gas, a metal layer, oxygen-containing molybdenum having an oxygen atomic concentration of higher than 10%, and nitrogen containing molybdenum layer having a nitrogen atomic concentration of higher than 10%, and has a first thickness of 300-1000 Angstrom , a first density, and a first stress state. The first electrode has a second thickness of 5000-15000 Angstrom , a second density different from the first density, and a second compressive stress state different from the first stress state. The first density is 30% higher than the second density. An INDEPENDENT CLAIM is included for a method of manufacturing a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic side cross-sectional view of a solar cell.    Substrate (100)    Protective layer (102)    First electrode (202)    Barrier layer (202B)    P-type semiconductor absorber layer (301)    N-type semiconductor layer. (302)