NOVELTY - Ion implanter (I) (100) comprises: an appliance configured to hold the wafers; an ion source (120) configured to generate ions at a rate; a mass analyzer, having a resolving power less than ten, configured to sort the ions according to their respective mass/charge ratios and further configured to direct selected ions toward the appliance in an ion beam; and voltage apparatus configured to apply a voltage drop of at least 250 kV between the ion source and the appliance, and further configured to propel ions toward the appliance.    USE - The ion implanters are useful: to implant ions in semiconductor wafers (claimed); and for preparing semiconductor lamina for photovoltaic cell fabrication and solar cell fabrication.    ADVANTAGE - The ion implanters: provide economical production of photovoltaic cells; and exploit the high spectral discrimination achievable by a low-R mass analyzer applied to filtering low-mass ions.    DETAILED DESCRIPTION - Ion implanter (I) (100) comprises: an appliance configured to hold the wafers; an ion source (120) configured to generate ions at a rate; a mass analyzer, having a resolving power less than ten, configured to sort the ions according to their respective mass/charge ratios and further configured to direct selected ions toward the appliance in an ion beam; and voltage apparatus configured to apply a voltage drop of at least 250 kV between the ion source and the appliance, and further configured to propel ions toward the appliance, where the rate enables the selected ions to constitute a current of at least 20 mA in the ion beam, and the mass analyzer is the only mass analyzer in the ion implanter. An INDEPENDENT CLAIM is also included for an ion implanter (II) adapted to implant ions in semiconductor wafers, comprising: the appliance configured to hold the wafers; the ion source; voltage apparatus applying a voltage drop between the ion source and the appliance, configured to accelerate ions toward the appliance, where the voltage drop comprises an extraction voltage drop, not adjustable above a maximum extraction value, configured to extract ions from the ion source; and a mass analyzer, configured to sort ions extracted from the ion source according to their respective mass/charge ratios and further configured to direct selected ions of the particular species toward the appliance in an ion beam, where the mass analyzer has a maximum magnetic rigidity corresponding to selecting ions of the particular species having respective energies corresponding to the maximum extraction value and the rate enables the selected ions of the particular species to constitute a current of at least 5 mA in the ion beam.    DESCRIPTION OF DRAWING(S) - The figure shows the block diagram of ion implanter, incorporating a low resolution mass analyzer, configured to implant hydrogen ions.    High-current ion implanter (100)    Single gas box (110)    Arc-discharge ion source (120)    High-voltage extraction assembly (130)    Low-resolution dipole filter magnet (140)