TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The film is formed using copper precursor of formula: XCuL or CuX2, indium precursor is of formula: InR1R2R3:Ln, gallium precursor of formula: GaR1R2R3:Ln, tellurium precursor is of formula: R1(Te)n'-R2X= beta -diketonate optionally substituted halo or 1-6C alkyl, dialkyl amidinate, dialkylamino alkoxide, alkoxy alkoxide or cyclopentadienyl;L=alkene, alkyne, cyclo (di)alkene optionally substituted by alkyl, trialkyl alkyl phosphine, trialkylphosphate, 5-12C alkyl silyl alkene or alkyl silyl alkyne;R1-R3=H, alkyl, alkylamino, alkoxy alkyl, amino alkoxy, alkoxyamino, alkoxy or halo;n=0-2;L'=ligand;andn'=1 or 2.The copper precursor is preferably bis (acetylacetonato)copper, bis(2,2,6,6-tetramethylheptanedionato)copper, bis (hexafluoroacetylacetonato)copper, (hexafluoroacetylacetonato)copper (vinyltrimethylsilane), (acetylacetonato)copper (vinyltrimethylsilane), (2,2,6,6-tetramethylheptanedionato)copper (vinyltrimethylsilane), (acetylacetonato)copper (vinyltriethylsilane), (2,2,6,6-teramethylheptanedionato)copper (vinyltriethylsilane), (hexafluoroacetylacetonato)copper (vinyltriethylsilane), (hexafluoroacetylacetonato)copper (1,5-cyclooctadiene), (hexafluoroacetylacetonato) copper(1,5-dimethylcyclooctadiene), (hexafluoroacetylacetonato)copper (3,3-dimethylbutene), (hexafluoroacetylacetonato)copper (trimethylphosphite), (hexafluoroacetylacetonato)copper (trimethylphosphine), (hexafluoroacetylacetonato) copper (1,3-cyclohexadiene), copper bis(dimethylaminomethylbutoxide), copper bis(ethylmethylaminomethylbutoxide), copper bis(diethylaminomethylbutoxide), copper bis(dimethylaminomethylpropoxide), copper bis(ethylmethylaminomethylpropoxide) or copper bis(diethylaminomethylpropoxide). The indium precursor is trimethyl indium, triethyl indium, triisopropyl indium, tributyl indium, tri-t-trimethoxy indium, triethoxy indium, triisopropoxy indium, dimethylisopropoxy indium, diethylisopropoxy indium, dimethylethyl indium, diethylmethyl indium, dimethylisopropyl indium, diethylisopropyl indium or dimethyl-t-butyl indium. The gallium precursor is trimethyl gallium, triethyl gallium, triisopropyl gallium, tributyl gallium, tri-t-butyl gallium, trimethoxy gallium, triethoxy gallium, triisopropoxy gallium, dimethylisopropoxy gallium, diethylisopropoxy gallium, dimethylethyl gallium, diethylmethyl gallium, dimethylisopropyl gallium, diethylisopropyl gallium and/or dimethyl-t-butyl gallium. The tellurium precursor is dimethyl telluride, diethyl telluride, diisopropyl telluride, di-t-butyl telluride, dimethylditelluride, diethylditelluride, diisopropylditelluride, di-t-butylditelluride, t-butylisopropyltelluride and/or t-butyltelluride. The precursor contains amine compound chosen from secondary or tertiary amine of formula: Ra-N(CRxRy)z, and 3-6 heterocyclic amine chosen from formulae (I)-(IV).Ra,Rx,Ry=H, methyl, ethyl, propyl, isopropyl, butyl, isobutyl or t-butyl;andz=2-5.