TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: Applying the RF power at the first mode comprises: depositing an intrinsic type microcrystalline silicon seed layer on the substrate in the presence of the first gas mixture and the first RF power mode; and ramping up RF power supplied into the processing chamber. Pulsing the gas mixture comprises: depositing a bulk intrinsic type microcrystalline silicon layer on the substrate; pulsing the RF power at every 0.1-60 seconds for 10-150 seconds; and synchronously pulsing the RF power at the second mode while pulsing the gas mixture supplied into the processing chamber. Ramping up the RF power comprises ramping up the RF power from a first predetermined range to a second predetermined range during a period of 20-300 seconds, where the first predetermined range of RF power is 0 Watts to 5 KiloWatts and the second predetermined range of RF power is controlled at 2-8 KiloWatts. Supplying the gas mixture comprises: supplying the gas mixture into the processing chamber prior to applying the RF power in the first mode; and ramping up flow rate of the gas mixture supplied into the processing chamber, where the flow rate of the gas mixture is ramped up to a predetermined set point over a period of 20-300 seconds and the flow rate of the gas mixture is ramped up from 0-5.6 sccm/L. The ramping up further comprises: ramping silane flow rate supplied in the gas mixture into the processing chamber; and synchronously ramping up the RF power and ramping up the gas mixture. The method (I) further comprises: controlling the gas mixture supplied to the processing chamber at a steady flow rate for a second predetermined time period after the first predetermined time period is terminated; and depositing a bulk intrinsic type microcrystalline silicon layer on the substrate, where controlling the gas mixture comprises controlling the RF power supplied to the processing chamber at a steady power for the second predetermined time period. Preferred Components: The gas mixture includes at least a silicon based gas and a hydrogen based gas. EXAMPLE - No suitable example given.