NOVELTY - Making silicon solar cell using screen printing method involves providing silicon semiconductor substrate (201) doped with first conductive impurities; forming emitter layer (202') doped with second conductive impurities on the substrate; forming etching mask pattern; performing etch-back process on emitter layer; removing etching mask pattern remaining after etch-back process; forming anti-reflective layer on surface of substrate; connecting upper electrode to emitter layer at upper electrode; and connecting lower electrode to lower portion of the substrate.    USE - For manufacturing a silicon solar cell (claimed).    ADVANTAGE - The process is simple and provides reduced manufacturing cost. The selective wet etchant is used in the etch-back process of the emitter layer, which is secured the stability and reproducibility of the etch-back process.    DETAILED DESCRIPTION - Manufacturing a silicon solar cell using a screen printing method involves providing a silicon semiconductor substrate (201) doped with first conductive impurities; forming an emitter layer (202') doped with second conductive impurities on the silicon semiconductor substrate, where the second conductive impurities having polarities opposite polarities of the first conductive impurities; forming an etching mask pattern using the screen printing method at a position where an upper electrode on the emitter layer is connected to the emitter layer; performing an etch-back process on the emitter layer using the etching mask pattern as a mask; removing the etching mask pattern remaining after the etch-back process is performed; forming an anti-reflective layer on an entire surface of the silicon semiconductor substrate; allowing the upper electrode to pass through the anti-reflective layer and connecting the upper electrode to the emitter layer at a formation position of the upper electrode; and connecting a lower electrode to a lower portion of the silicon semiconductor substrate. In the method, forming the etching mask pattern comprises performing a screen printing process on any one of a soldering material, silicon on glass (SOG), and silica slurry to form the etching mask pattern, where performing the etch-back process uses a selective wet etchant including HNO3, HF, CH3COOH, and H2O. An INDEPENDENT CLAIM is included for a silicon solar cell comprising a silicon semiconductor substrate doped with first conductive impurities; an emitter layer doped with second conductive impurities on the silicon semiconductor substrate; an anti-reflective layer on an entire surface of the silicon semiconductor substrate; an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer; and a lower electrode connected to a lower portion of the silicon semiconductor substrate, where the emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities, where a surface resistance of the second emitter layer is 100-120 Ohm/square.    DESCRIPTION OF DRAWING(S) - The figure shows cross-section view of method of manufacturing silicon solar cell.    Substrate (201)    Selective emitter layer (202')    Anti-reflective layer (204)    Upper electrode (205)    Lower electrode (206)