NOVELTY - Preparing anti-reflection film of surface-embedded porous silicon structure of silicon-based solar cell comprises: (a) selecting the P-type unpolished czochralski silicon; (b) preparing a metal aluminum membrane anode electrode; (c) placing the front face of the silicon slice in hydrofluoric acid (HF) corrosive liquid; and (d) carrying out electrochemical corrosion treatment.    USE - The method is useful for preparing anti-reflection film of surface-embedded porous silicon structure of silicon-based solar cell (claimed).    DETAILED DESCRIPTION - Preparing anti-reflection film of surface-embedded porous silicon structure of silicon-based solar cell comprises: (a) selecting the P-type unpolished czochralski silicon having a crystal orientation (100) of 200-240 microns thick as the silicon substrate material of the solar cell; firstly placing the silicon slice used as the silicon substrate material of the solar cell in sodium hydroxide magnetic solution for primary corrosion to remove the mechanical damaged layer on the surface of the silicon slice, where the alkaline solution is prepared from sodium hydroxide and water based on the volumetric ratio of 1:5; the temperature of the alkaline solution is 80 degrees ; placing the silicon slice in the alkaline solution and corroding it for 1-2 minutes under the ultrasonic action; (b) preparing a metal aluminum membrane anode electrode on the back face of the silicon slice through conventional screen printing method, keeping Al thin film and silicon substrate in excellent ohmic contact with each other, connecting a cathode electrode platinum sheet or wire to the front face on the other side of the silicon slice through a wire; (c) placing the front face of the silicon slice in HF corrosive liquid to immerse for 1-2 minutes to remove the naturally oxidized layer on the surface of the silicon slice, where the HF solution is prepared from HF and H2O in terms of the volumetric ratio of 1:10; the temperature of the corrosive liquid is 26-30 degrees C; and (d) placing the front face of the silicon slice in a vessel with ultrasonic condition of an ultrasonic frequency as 40-60 Hz, and carrying out electrochemical corrosion treatment in the mixture of electrolyte HF, water and alcohol, where the electrolyte is mixture of HF, water and organic solvent ethyl alcohol in terms of the volumetric ratio of 2:1:1 (HF:H2O:ethanol (C2H5OH)); the temperature of the electrolyte is 40-50 degrees C; then connecting the DC power supply, where the area density of the electrolytic corrosion current is 5-10 mA/sq. cm; the time for electrolytic corrosion is 40-60 seconds; and finally, forming the anti-reflection film of the surface-embedded porous silicon structure on the front face of the silicon slice, where the reflectivity is 1.42% in average; the thickness of the anti-reflection film is 380-1100 nm and the film is of porous structure.