NOVELTY - The method comprises starting plasma, supplying a reactive, silicon-containing gas and hydrogen to a plasma chamber system after or before starting the plasma, where the concentration of the reactive, silicon-containing gas is adjusted to greater than 0.5% during the supply into the chamber, and adjusting the plasma power to 0.1-2.5 W/cm2 electrode areas. The deposition rate is 1.0-2.5 nm/s and the microcrystalline layer is deposited with a thickness of less than 1000 nanometer on the substrate.    USE - Method for depositing microcrystalline silicon on a substrate in a plasma chamber system useful for the production of solar cell (claimed).    ADVANTAGE - The method ensures production of solar cell with high quality and high efficiency by deposition of microcrystalline silicon on a substrate with high deposition rate.    DETAILED DESCRIPTION - The method comprises starting plasma, supplying a reactive, silicon-containing gas and hydrogen to a plasma chamber system after or before starting the plasma, where the concentration of the reactive, silicon-containing gas is adjusted to greater than 0.5% during the supply into the chamber, and adjusting the plasma power to 0.1-2.5 W/cm2 electrode areas. The deposition rate is 1.0-2.5 nm/s and the microcrystalline layer is deposited with a thickness of less than 1000 nanometer on the substrate. The flow of the gas or gas mixture supplied to the chamber and diverted from the chamber is regulated in such a way that it forms a constant deposition pressure during the process. The microcrystalline layer is deposited with a thickness of 400-600 nm. The stimulation frequency of 13.56-100 MHz is selected in an electrode interval of 10-25 millimeter. The deposition pressure in the plasma chamber is adjusted to 1-25 mbar. The reactive, silicon-containing gas is continuously supplied into the chamber after the plasma starting in a volume stream of 0.5-20 sccm/100 cm2 and a coating surface of 0.5-10 sccm/100 cm2. The base pressure in the plasma chamber system is 10-5 mbar and the substrate temperature is 100-350 degrees C. The gas mixture present in the chamber is partially and continuously diverted from the chamber. The substrate is electric contact layer, microcrystalline n-layer, a glass-transparent conducting oxide-a-silicon:hydrogen cell with microcrystalline p-layer or metal-transparent conducting oxide-a-silicon:hydrogen cell with microcrystalline p-layer.