TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The p-type metal conductor is a compound including groups (I+VI), chosen from copper sulfide, copper selenide, copper telluride, silver selenide, silver sulfide and/or silver telluride, preferably copper selenide or copper telluride or groups (II+V), a compound including group (I+VI) and group (V) added to the compound including group (I+VI) or a compound including group (II+V) and group (IV) added to compound including group (II+V). The n-type metal conductor is a compound including group (III+VI), chosen from boron sulfide, aluminum sulfide, gallium sulfide, indium sulfide, boron selenide, aluminum selenide, gallium selenide, indium selenide, boron telluride, aluminum telluride, gallium telluride and/or indium telluride, preferably gallium selenide/indium selenide or gallium selenide/cadmium selenide or group (IV+V), compound including group (III+VI) and group (II) added to compound including group (III+VI) or a compound including group (IV+V) added to compound including group (IV+V). The p-type metal conductor comprises lanthanum-copper oxide, cerium-copper oxide, scandium-copper oxide, yttrium-copper oxide, cerium-copper selenide, scandium-copper selenide, yttrium-copper selenide, cerium-copper telluride, scandium-copper telluride and/or yttrium-copper telluride. The n-type metal conductor comprises vanadium oxide, barium-bismuth oxide and/or lanthanum manganese oxide. The metal-insulator-transition material complex further comprises a buffer layer which contains a compound including group (II+VI), group (III+V) and/or group (IV), group (2I+VI) metal compound, chosen from copper sulfide, silver sulfide, copper selenide, silver selenide, copper telluride and/or silver telluride, preferably copper selenide or copper telluride or group (2III+3VI) metal compound, chosen from boron sulfide, aluminum sulfide, gallium sulfide, boron selenide, aluminum selenide, gallium selenide, indium selenide, boron telluride, aluminum telluride, gallium telluride and/or indium telluride. The solar cell comprises an anti-reflection layer which contains transparent compound, zinc oxide, titanium dioxide, barium-titanium oxide and/or zirconium oxide, a substrate including silicon, glass, stainless iron plate, silicon-on-insulator or compound substrate. The solar cell is a solar cell including a glass substrate/nickel, molybdenum or aluminum/copper selenide/gallium selenide/indium selenide/zinc oxide or transparent layer/gold or aluminum that are sequentially formed, a solar cell including a glass substrate/nickel, molybdenum or aluminum/copper telluride/gallium selenide, indium selenide or transparent layer/gold or aluminum that are sequentially formed or a solar cell including a glass substrate/nickel, molybdenum or aluminum/copper telluride/gallium selenide/cadmium selenide/zinc oxide or transparent layer/gold or aluminum that are sequentially formed. The solar cell includes a lower electrode containing nickel, molybdenum or aluminum, upper electrode containing gold or aluminum and anti-reflection layer including zinc oxide or transparent layer.