TECHNOLOGY FOCUS - ELECTRONICS - Preferred Wafer: In the high voltage semiconductor based wafer, the total voltage of the semiconductor based wafer is substantially equal to the voltage of a single p-n junction multiplied with the number of p-n junctions on the semiconductor based wafer. The semiconductor based wafer comprises 2-1000 p-n junctions, preferably 10-500 p-n junctions, more preferably 50-200 p-n junctions, and most preferably 144 p-n junctions, or alternatively 50-144 p-n junctions or 144-200 p-n junctions, where the p-n junctions are encapsulated within the semiconductor based wafer and/or the p-n junctions are located on the front surface and/or the p-n junctions are located on the back surface. The semiconductor based wafer comprises metallurgical grade silicon. Also, the semiconductor based wafer comprises by-pass diodes. The semiconductor based wafer comprises: a first p-n junction defining a first doped area of a first type and a second doped area of a second type, the first p-n junction defining a first current path, a second p-n junction electrically isolated in relation to the first p-n junction and defining a third doped area of the second type and a fourth doped area of the first type, the second p-n junction defining a second current path, and a metal layer for electrically connecting the first doped area and the third doped area or alternatively the second doped area and the fourth doped area so that the first and second current paths form a series connection. Moreover, the first type comprises either a boron, an arsenic or an atom group III material dopant and the second type comprises either a phosphor, a gallium or an atom group IV material dopant, where the first doped area of the first type is oriented towards the front surface, the a second doped area of the second type is oriented towards the back surface, the third doped area of the second type is oriented towards the front surface and the fourth doped area of the first type is oriented towards the back surface. The third and fourth doped areas are connected to further semiconductor based wafers, or other electrical components, by the use of substantially two soldering points for each semiconductor based wafer. The first type dopant is applied before the second type dopant. The active areas are applied by the use of screen printing or alternatively by the use of inkjet printing.