TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: In the method above, the application of the pattern of at least one of the electrical contacts comprises: applying a layer to the side of the substrate having at least one of the first doped surface and the substrate side having the second doped surface; selectively removing material of the layer straight-lined opposed to the spatial areas of the doping pattern such that the material results in exposed layer areas; and filling the exposed layer areas with electrical contact material. The layer comprises a polymer material and the step of selectively removing material of the layer further comprises: applying a shadow mask to the layer to shadow the layer at areas straight-lined opposed to the spatial areas of the doping pattern; curing the layer to produce cured layer areas and uncured layer areas, the uncured layer areas corresponding to the shadowed layer areas; removing the shadow mask; and applying an etchant to the substrate side comprising the layer to selectively remove the layer material straight- lined opposed to the spatial areas of the doping pattern. The layer comprises a resist material, and the step of selectively removing of material of the layer further comprises: covering the layer with a hard mask that has a pattern of openings, which uncover the layer at areas straight-lined opposed to the spatial areas of the doping pattern; exposing the substrate side having the layer; removing the hard mask; and applying an etchant to the substrate side comprising the layer to selectively remove the layer material straight-lined opposed to the spatial areas of the doping pattern due to the previous exposure. The method further comprises removing the layer. The method further comprises treating at least one of the electrical contacts thermally. The method further comprises passivating the doped first and second surface. The method further comprises coating the doped first and second surface with an anti-reflective coating. The application of the first and second electrical contacts is performed by printing or soldering. The substrate is p-doped silicon. The first dopant is an n-dopant and where the second dopant is a p-dopant. The third dopant is an n-dopant, where the doping pattern comprising the third dopant has a higher doping level than the first doped surface excluding the area comprising the third dopant. The third dopant is an n-dopant, and where the doping pattern having the third dopant has a higher doping level than the first doped surface excluding the area comprising the third dopant. The method further comprises metallizing the substrate side comprising the first doped surface and the first electrical contacts. The hard mask is produced by soft stamping.