NOVELTY - The method comprises contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere at a pressure of 0-10 MPa and a temperature of less than 1450 degrees C to form a bonding layer between the first and second surfaces. The first bonding surface comprises a polarized surface layer, and the second bonding surface comprises a hydrophilic surface layer, where the first and second bonding surfaces are different.    USE - The method is useful for bonding substrates, which are useful in an implantable medical device and a solar cell (all claimed).    ADVANTAGE - The method is capable of easily bonding the substrates with high robustness and without any failure thus providing long-term reliability to the multicomponent devices and avoiding internal stresses and poor thermal matching between the components.    DETAILED DESCRIPTION - The method comprises contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere at a pressure of 0-10 MPa and a temperature of less than 1450 degrees C to form a bonding layer between the first and second surfaces. The first bonding surface comprises a polarized surface layer, and the second bonding surface comprises a hydrophilic surface layer, where the first and second bonding surfaces are different. Each element has an optionally hydroxylated or hydride-terminated surface. The first and second substrates are each wafers or beads. The oxidizing atmosphere is air having 40-80% of relative humidity. The compressing step is maintained for up to 2 hours. The first and second surfaces are essentially flat. The bonding layer has a bonding strength of 10 MPa. The first substrate is silicon wafer and the second substrate is a silicate wafer. The first bonding surface is formed by cleaning the silicon wafer with the Herbots-Atluri clean. The second bonding surface is formed by chemical etching followed by chemical oxidation of the silicate wafer. The first and second substrates are silicate wafers, where the first bonding surface comprises hydroxyl-terminated silicate represented as O2H2Si(1x 1)(100) or hydroxy-terminated silicon dioxide surface represented as (SiO2-O2H2Si) in which 5-90% of hydrogen is desorbed from the first bonding surface and the second bonding surface comprises SiOx in which x is 0-2. An INDEPENDENT CLAIM is included for a bonded substrate.    DESCRIPTION OF DRAWING(S) - The figure shows scanning electron micrographs of silicon dioxide formed on silicon wafers.