NOVELTY - The method comprises forming a nano-scale self-assembly material layer (23) on a substrate (21) formed of a layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. The surface treatment process is an etching process or an ion implantation process. Each of the DNA molecule and the protein is removed by heat treatment process using an acidic solution. The synthetic polymer is removed by a heat treatment process using a chemical agent.    USE - The method is useful for forming a nano-device such as nano-actuator and nano-robot, which is useful for fabrication of photonic crystal devices, magnetic devices, information recording media, solar cells, or semiconductor devices including nano-sized transistors.    ADVANTAGE - The method is capable of economically and simply forming the nano-device with self-assembling characteristics, reduced number of processing step, improved integration density and yield and without using a light source and an exposure process, and easily controls the shape and position of the nanostructure of the nano-device.    DETAILED DESCRIPTION - The method comprises forming a nano-scale self-assembly material layer (23) on a substrate (21) formed of a layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. The surface treatment process is an etching process or an ion implantation process. Each of the DNA molecule and the protein is removed by heat treatment process using an acidic solution. The synthetic polymer is removed by a heat treatment process using a chemical agent. The carbon-based material is removed by a chemical agent selectively removing a carbon series material. The method further comprises forming an insulating layer on the substrate having an active region, forming a conductive layer on the insulating layer, sequentially patterning the conductive layer and the insulating layer using the self-assembly material layer as an etching mask to form a conductive layer pattern and an insulating layer pattern, forming an ion implantation region on the substrate using the self-assembly material layer as an ion implantation mask, and forming a spacer layer on side walls of the conductive layer pattern and the insulating layer pattern.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method for manufacturing a nano-device.    Substrate (21)    Self-assembly material layer. (23)