TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Properties: The thermoelectric material has an electrical conductivity of more than 103 S/m, Seeback coefficient of more than 100 mu V/K, and thermal conductivity of less than 4 W/mK at 400- 1200K. The thermoelectric material has a power factor times temperature (PFx T) of more than 0.1 W/mK, preferably more than 0.4 W/mK at 1000K, and a figure of merit (ZT) of more than 0.05 or more than 0.2 at 1000K. The power factor (PF) is defined by relation: PF= sigma alpha 2, and figure of merit is defined by the relation: ZT=( sigma alpha 2T)/k, where sigma is electrical conductivity (S/m), alpha is Seeback coefficient ( mu V/K), T is temperature ( degrees K) and k is thermal conductivity (W/mK). Preferred Process: The titania-based material and half-metal material are combined to form a mixture and then densified to form multiphase thermolelectric material. Combining involves forming a suspension of the powders in a liquid, ultrasonicating the suspension to form a well-dispersed mixture of powder particles and drying and sieving the mixture. Densifying involves heating the mixture in an atmosphere containing oxygen or free of oxygen, or in vacuum.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The titania-based semiconducting phase and the half-metal conducting phase each have an average grain size of 10-800 nm, preferably titania-based material has a crystallite size of 10-50 nm, and half-metal conducting material has a crystallite size of 100-400 nm. Preferred Composition: The weight ratio of titania-based semiconducting phase to the half-metal conducting phase is 2:98-98:2. The titania-based semiconducting phase is sub-stoichiometric titanium oxide. The titania-based semiconducting phase comprises cationic dopant(s) and/or anionic dopant(s), and dopant selected from lithium, sodium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, carbon, nitrogen and sulfur. The half-metal conducting phase is a carbide, nitride or boride of titanium or silicon. The thermoelectric material comprises sub-stoichiometric titanium oxide, and titanium carbide and/or titanium nitride.