TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The carbon distribution curve of thin film layer is continuous curve. The oxygen distribution curve of thin film layer has extreme value(s). The maximum value of atomic ratio of oxygen in oxygen distribution curve of thin film layer and absolute value of difference of minimum value are 5 atomic% or more. The maximum value of atomic ratio of silicon in silicon distribution curve of thin film layer and absolute value of difference of minimum value are less than 5 atomic%. The maximum value of total content of atomic ratio of oxygen and carbon in oxygen-carbon-distribution curve and absolute value of difference of minimum value are less than 5 atomic%. The carbon distribution curve of thin film layer has at least 3 extreme value(s). The absolute value of difference of distance from the surface of thin film layer in the film thickness direction to extreme value in carbon and oxygen distribution curve with respect to total extreme value is 200 nm or less. The oxygen distribution curve of thin film layer has at least three extreme values. The electron beam transmittance curve of thin film layer is continuous curve, and has at least three extreme values. The absolute value of difference of distance from the surface of thin film layer in the film thickness direction to extreme value in electron beam transmittance curve with respect to total extreme value is 200 nm or less. The thickness of thin film layer is 5-3000 nm. Preferred Process: The thin film layer is formed by plasma chemical vapor deposition method or continuous film-forming process. The plasma chemical vapor deposition method involves arranging the base material on a pair of film-forming roll, discharging between pair of film-forming rolls, and generating plasma. The gas-barrier laminated film is capable of reversing the polarity of pair of film-forming rolls alternatively, when discharging between pair of film-forming rolls. Preferred Film: The thin film layer contains silicon oxide and silicon nitride as main components and carbon, and does not contain nitrogen. Preferred Components: The film-forming gas used in plasma chemical vapor deposition method contains organosilicon compound and oxygen. The content of oxygen in film-forming gas is less than the theoretical oxygen content, such that total oxidation of organosilicon compound is carried out.    TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The base material contains polyester-type resin and/or polyolefin-type resin, or polyethylene terephthalate and/or polyethylene naphthalate.