NOVELTY - Solid-state image capture device comprises photoelectric converter, on-chip lens, and antireflection layer.    USE - The device is useful for photoelectrically converting received light to generate signal charge.    ADVANTAGE - The device is capable of improving the image quality of captured images and capable of improving the manufacturing efficiency.    DETAILED DESCRIPTION - Solid-state image capture device comprises: at least one photoelectric converter provided at an image capture surface of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to generate signal charge; at least one on-chip lens provided at the image capture surface of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and an antireflection layer provided on an upper surface of the on-chip lens at the image capture surface of the substrate; where the antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin. INDEPENDENT CLAIMS are:    (1) an electronic apparatus comprising: a photoelectric converter provided at an image capture surface of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to generate signal charge; an on-chip lens provided at the image capture surface of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and an antireflection layer provided on an upper surface of the on-chip lens at the image capture surface of the substrate; where the antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin; and    (2) a manufacturing method for a solid-state image capture device comprising: providing a photoelectric converter at an image capture surface of a substrate, the photoelectric converter receiving incident light at a light-receiving surface of the photoelectric converter and photoelectrically converting the incident light to generate signal charge; providing an on-chip lens above the light-receiving surface of the photoelectric converter, the on-chip lens focusing the incident light onto the light-receiving surface; and providing an antireflection layer on an upper surface of the on-chip lens, where the antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low refractive-index particles having a lower refractive index than the binder resin.