NOVELTY - The method involves forming an intermediate structure (10) comprising a silicon support substrate (1), a silicon dioxide layer (20) and a germanium layer (3), where the silicon dioxide layer is in direct contact with the germanium layer. A heat treatment is applied to the intermediate structure under a neutral or reducing atmosphere at a temperature of 800-900 degree Celsius and for a determined period to diffuse part of oxygen of the silicon dioxide layer through the germanium layer.    USE - Method for manufacturing a structure (claimed) e.g. semiconductor structure such as germanium on insulator structure for forming a metal oxide semiconductor or field effect or bipolar transistor, photo detector or solar cell, silicon on insulator structure, in microelectronics, optoelectronics and photovoltaic fields.    ADVANTAGE - The method allows the insulating layer formed between the germanium layer and the substrate to improve the electrical qualities of the structure, facilitates manufacturing of the structure, and ensures better adhesion of the germanium layer on the substrate. The heat treatment is performed in the intermediate structure under a neutral or reducing atmosphere at the temperature of 800-900 degree Celsius and for the determined period to diffuse part of oxygen of the silicon dioxide layer through the germanium layer, thus leading partial or total dissolution of the silicon dioxide layer. The method limits the appearance of crystal defects that cause disagreement parameters of loop between the silicon and the germanium, and limits the phenomenon of inter-diffusion of germanium and silicon.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a structure comprising a silicon layer with thickness between 1 and 3 nanometers.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a germanium on insulator intermediate structure.    Silicon support substrate (1)    Germanium layer (3)    Intermediate structure (10)    Silicon dioxide layer (20)