NOVELTY - A highly purified crystalline silicon has boron content of less than 0.015 ppmw and zinc content of 50-1000 ppbw.    USE - Highly purified crystalline silicon is used for producing highly purified single crystal silicon (claimed) and highly purified polycrystalline silicon used for semiconductor device and solar cell.    ADVANTAGE - The highly purified crystalline silicon having low boron content is manufactured easily and economically, and without expelling waste material in large amount.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) highly purified single crystal silicon, which is produced from highly purified crystalline silicon, and has carbon content of 2 ppmw or less and specific-resistance value of 20-1000 ohm.cm;    (2) manufacture of highly-purified crystalline silicon, which involves supplying zinc gas (A) from a zinc gas supply nozzle (3) of vertical reactor (1), generating crude crystal silicon in front-end of silicon-tetrachloride gas supply nozzle (2) by reacting silicon-tetrachloride gas (B) and zinc gas at 800-1200 degrees C, growing crude crystal silicon (C) towards downward direction from the front-end of silicon-tetrachloride gas supply nozzle, discharging the grown crude crystal silicon from vertical reactor, and acid-treating the discharged crude crystal silicon. The vertical reactor has silicon-tetrachloride gas supply nozzle, zinc gas supply nozzle and exhaust-gas extracting pipe (4). An insertion installation is provided inside the reactor in upper portion. The silicon-tetrachloride gas has organic silicon compound content of 0.1 ppmw or less. The purity of metallic zinc in the zinc gas is 99.99 weight%. The highly purified silicon tetrachloride has boron content of 0.1 ppbw or less;    (3) highly purified silicon tetrachloride, which has organic silicon compound content of 0.1 ppmw or less and boron content of 0.1 ppbw or less; and    (4) manufacture of highly purified silicon tetrachloride, which involves reacting industrial metallic silicon with hydrogen chloride and/or chlorine, and distilling to reduce boron compound content and organic silicon compound content.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of crude crystal silicon manufacturing apparatus. (Drawing includes non-English language text)    Vertical reactor (1)    Silicon-tetrachloride gas supply nozzle (2)    Zinc gas supply nozzle (3)    Exhaust-gas extracting pipe (4)    Crude crystal silicon recovery apparatus (5)    Zinc (A)    Silicon tetrachloride (B)    Crude crystal silicon (C)