NOVELTY - Semiconductor device comprises: (a) a first electrically conductive structure that comprises a first electrode layer; (b) a second electrically conductive structure that comprises a second electrode layer; (c) an active structure that comprises a layer of an organic semiconducting material; (d) an first electrically insulating barrier structure that comprises an electrically insulating barrier layer; and (e) a second electrically insulating barrier structure that extends over a part of the second electrically conductive structure.    USE - The semiconductor device is useful for lighting and displays, thin film batteries, thin film organic solar cells, electrochromic foils, and electrophoretic displays.    DETAILED DESCRIPTION - Semiconductor device comprises: (a) a first electrically conductive structure that comprises a first electrode layer; (b) a second electrically conductive structure that comprises a second electrode layer; (c) an active structure that comprises a layer of an organic semiconducting material, where the active structure is arranged between the first and the second electrically conductive structure; (d) an first electrically insulating barrier structure that comprises an electrically insulating barrier layer arranged between the first and the second electrically conductive structure; and (e) a second electrically insulating barrier structure that extends over a part of the second electrically conductive structure, where the second electrically conductive structure extends laterally beyond the second electrically insulating barrier structure, where the active structure is encapsulated by an encapsulation comprising the first electrically conductive structure, the first electrically insulating barrier structure, the second electrically conductive structure, and the second electrically insulating barrier structure. An INDEPENDENT CLAIM is included for a method for manufacturing the semiconductor device comprising: (a) providing a first electrically conductive structure that comprises a first electrode layer; (b) providing a first electrically insulating barrier structure that comprises an electrically insulating barrier layer on the first electrically conductive structure; (c) depositing an active structure comprising a layer of an organic semiconducting material at the first electrically conductive structure; (d) depositing on the active structure a second electrically conductive structure that comprises a second electrode layer; and (e) depositing a second electrically insulating barrier structure over the second electrically conductive structure, so that at least a portion of the second electrically conductive structure remains uncovered and forms a feed-through to the second electrode layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device.    First electrically conductive structure (10)    First electrode layer (12)    Charge injection layer (14)    Electric supply structure (22)    Second electrode layer (24)    Active structure (30)    First electrically insulating barrier structure (40)    Second electrically insulating barrier structure (50)    Electric power supply (60)