TECHNOLOGY FOCUS - POLYMERS - Preferred Coating: In the solar cell coating, the conductive polymer material is a nano-scale conjugated polymer material. The conductive polymer material is a nano-scale p-type conductive polymer material. The low bandgap material is a nano semiconductor material where multiple exciton generation (MEG) takes place. The nano semiconductor material comprises nano particles formed of bismuth selenide (Bi2Se3), bismuth sulfide (Bi2S3), cadmium telluride (CdTe), gallium arsenide (GaAs), mercuric selenide (HgSe), mercuric telluride (HgTe), indium arsenide (InAs), indium phosphide (InP), InSb, lead sulfide (PbS), lead selenide (PbSe), lead telluride (PbTe), copper indium selenide (CuInSe2), copper indium sulfide (CuInS2), silicon (Si) or germanium (Ge). Moreover, the semiconductor material is a nano-scale organic semiconductor material or a nano-scale inorganic semiconductor material, where the inorganic semiconductor material is an n-type nano-scale inorganic material, where the inorganic semiconductor material comprises titanium dioxide. The organic semiconductor material is an n-type organic semiconductor material, where the organic semiconductor material comprises polyvinylcarbazole. The solar cell coating as well comprises comprises a solvent comprising benzene, chloroform, toluene, chlorobenzene, dichlorobenzene, trichlorobenzene, tetrahydrofuran, pyridine or combination. The solar cell coating is flowable. Preferred Method: Alternatively, manufacturing the solar cell coating comprises: forming the mixture by mixing the conductive polymer material, the low bandgap material and the semiconductor material; and forming a liquid mixture with flowability by performing high-temperature milling on the mixture; where the conductive polymer material corresponds to the first HOMO and the first LUMO, the low bandgap material corresponds to a second HOMO and a second LUMO, and the semiconductor material corresponds to a third HOMO and a third LUMO; where the low bandgap material is coupled to the conductive polymer material and the second HOMO and the second LUMO have lower energy than the first HOMO and the first LUMO, respectively, and the semiconductor material is coupled to the low bandgap material and the second HOMO and the second LUMO have higher energy than the third HOMO and the third LUMO, respectively. The method further comprises coating a substrate with the liquid mixture.