NOVELTY - Producing polycrystalline silicon for P-type solar cell comprises: (a) selecting the silicon material; (b) slagging the silicon liquor; (c) carrying out straight pulling under a vacuum condition for elimination of the purities; (d) illuminating the silicon liquor to separate the impurities; and (e) removing impurities in the ingot casting process.    USE - The method is useful for producing polycrystalline silicon for P-type solar cell (claimed).    ADVANTAGE - The method has scientific process, continuous flow, energy saving, pollution reduction, long service life of the device, safety production, and stable and reliable product quality.    DETAILED DESCRIPTION - Producing polycrystalline silicon for P-type solar cell comprises: (a) selecting the silicon material: using the metallurgical industrial silicon as raw material; selecting the metal impurities of the raw material, and the major impurities like phosphorus and boron being limited; (b) slagging the silicon liquor: feeding the raw material into an intermediate-frequency heating furnace to melt into silicon liquor; then adding a slagging agent to the silicon liquor and uniformly stirring the liquor; after that, standing the system and preserving the heat thereof to volatilize the non-metal impurities like phosphorus and boron or float up or precipitate the impurities with the slag to separate them from the silicon; (c) carrying out straight pulling under a vacuum condition for elimination of the purities: improving the monocrystal pulling furnace by pulling of crystals; then using a vacuum pulling furnace and connecting the intermediate-frequency heating furnace with the vacuum pulling furnace through a conduit with valve to guide them; then introducing the silicon liquor of the intermediate-frequency heating furnace into the heating container of the vacuum pulling furnace after the slagging and slag separating so as to remove the non-impurities like phosphorus through vacuum pumping; and during the process of pulling the polycrystalline silicon by taking the oriented seed crystal as the growing crystal nucleus for vertical rotating and lifting, removing the metal impurities and other impurities left in the residual solution in the container; (d) illuminating the silicon liquor to separate the impurities: illuminating the vacuum pulling furnace, namely, placing an electric light source above the heating container of the vacuum pulling furnace to simultaneously illuminate the silicon liquor introduced into the container of the vacuum pulling furnace as well as the seed crystal during the process of pulling the polycrystalline silicon so as to ionize the impurities that are hard to separate to make it easy for the elimination; and (e) removing impurities in the ingot casting process: conducting a series of steps, including melting, annealing, cooling and oriented solidification to the pulled polycrystalline silicon to form the polycrystalline silicon ingots; then cutting away the unqualified parts after the detection.