NOVELTY - The device (514) has N-type doped silicon rich dielectric layer (514b) which is doped with N-type dopant and is formed on the lower electrode (514a). A P-type doped silicon rich dielectric layer (514c) is doped with P-type dopant and is formed on the N-type doped silicon rich dielectric layer. The upper electrode (514d) is formed on the P-type doped silicon rich dielectric layer. An intrinsic layer is formed between the doped silicon rich dielectric layers made of silicon nanoparticles.    USE - Photovoltaic cell device of display panel (claimed). Uses include but are not limited to transmissive display panel, transflective display panel, vertical alignment (VA) display panel, low temperature poly silicon (LTPS) display panel, twist nematic (TN) display panel, super twist nematic (STN) display panel, advance super view (ASV) display panel, fringe field switching (FFS) display panel, dual view display panel and polymer stabilized alignment (PSA) display panel.    ADVANTAGE - Since the N-type and P-type doped silicon rich dielectric layers are doped with different ions, an internal electric field exist between the dielectric layers, such that the electron and hole are attracted and moved to the dielectric layers and a photovoltaic energy is produced. Thus favorable photovoltaic conversion efficiency is produced, photovoltaic and thermal stability is improved, operation life time is improved and the thickness of the film layer in the photovoltaic cell device is made small. The electric energy obtained during the photo sensing operation is utilized by the display panel. Thus the power consumption is reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for display panel.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross sectional view of a substrate of the display panel on which the photovoltaic cell device is formed.    Photovoltaic cell device (514)    Lower electrode (514a)    N-type doped silicon rich dielectric layer (514b)    P-type doped silicon rich dielectric layer (514c)    Upper electrode (514d)