NOVELTY - The photovoltaic device comprises two electrical contacts, p-type dopants, n-type dopants, a bulk region, nanowires in an aligned array which contact the bulk region, and metal particles in the vicinity of the area. All nanowires in the array and bulk region have a predominant type of n- or p-dopants. A surface of the bulk device lies along a plane. The nanowires are aligned normal to the plane. The nanowires of the array have a mean diameter sufficiently small to suppress free carrier absorption. The nanowires have a diameter of less than 200 nm.    USE - The photovoltaic device is useful as a photovoltaic cell or a light emitting diode (claimed), where the photovoltaic cell is useful for generating electricity.    ADVANTAGE - The photovoltaic device can be economically manufactured with high efficiency and product yield and reduced current leakage, and achieves effective free carrier transport to the junction without causing increased recombination rate.    DETAILED DESCRIPTION - The photovoltaic device comprises two electrical contacts, p-type dopants, n-type dopants, a bulk region, nanowires in an aligned array which contact the bulk region, and metal particles in the vicinity of the area. All nanowires in the array and bulk region have a predominant type of n- or p-dopants. A surface of the bulk device lies along a plane. The nanowires are aligned normal to the plane. The nanowires of the array have a mean diameter sufficiently small to suppress free carrier absorption. The nanowires have a diameter of less than 200 nm. The transition between the n- and p-regions occurs 0.75 mu m below the base of the nanowires. The device is fabricated by a process comprising metal enhanced etching in a solution comprising hafnium and oxidizer. One of the electrical contacts extends to the area where the nanowires contact the bulk region. The device further comprises a nanostructure partially covering a substrate, and a continuous thin film covering the substrate not covered by the nanostructure but within the nanostructure. The thin film serves as a contact for the device. The nanostructure comprises a nanowire array. The thin film partially covers the substrate area adjacent to the nanowires of the array. The thin film is 200 nm below the top of the nanostructure. An INDEPENDENT CLAIM is included for a method of fabricating a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a silicon nanowire photovoltaic cell with a submerged contact.