NOVELTY - The method comprises selecting an acetate precursor of semiconductor materials having identical crystal structures with minimal lattice mismatch, adding a bivalent transition metal ion as a dopant, mixing the acetate precursor of semiconductor material and bivalent transition metal ion dopant in a first water-in-oil emulsion at room temperature, mixing a sulfide ion source in a second water-in-oil emulsion at room temperature, and combining the first water-in-oil emulsion with the acetate precursor of semiconductor material and bivalent transition metal with the second water-in-oil emulsion.    USE - The method is useful for fabricating a dopant based core/shell/shell semiconductor quantum dot, which is useful in field of electronics, optoelectronics, bioimaging and spintronics, in memory storage devices and computers, and as high-performance solar cell absorber material and efficient electroluminescent (phosphor) material.    ADVANTAGE - The method is capable of fabricating a dopant based core/shell/shell semiconductor efficient for capturing a broad spectrum of solar light and having a quantum dot with a broad spectrum excitation range, provides improved crystal structure with minimal lattice mismatch and luminescence excitation spectra, allows fine tuning of an excitation band-gap, and has optimal adaptability and reconfigurablility.    DETAILED DESCRIPTION - The method comprises selecting an acetate precursor of semiconductor materials having identical crystal structures with minimal lattice mismatch, adding a bivalent transition metal ion as a dopant, mixing the acetate precursor of semiconductor material and bivalent transition metal ion dopant in a first water-in-oil emulsion at room temperature, mixing a sulfide ion source in a second water-in-oil emulsion at room temperature, combining the first water-in-oil emulsion with the acetate precursor of semiconductor material and bivalent transition metal with the second water-in-oil emulsion containing the sulfide ion source at room temperature to form a quantum dot (Qdot) alloy core, and growing an outer semiconductor material shell layer about the Qdot core to form a ternary alloy core/shell dopant based Qdot semiconductor. The average size of the ternary alloy core/shell dopant based Qdot semiconductor is 3-4 nm in diameter.    DESCRIPTION OF DRAWING(S) - The figure shows a structural model of a cadmium sulfide/cadmium zinc sulfide and manganese/ zinc sulfide core/shell.