NOVELTY - Producing low-purity mono-crystalline silicon solar cell, comprises (i) inserting a silicon slice in a quartz boat and burning the silicon slice for 25-35 minutes; (ii) cleaning the forged silicon slice with an acid; (iii) texturing the surface of the cleaned silicon slice to form a matte surface on the surface of the silicon slice; (iv) plating an intrinsic silicon film by introducing the silane and argon gas and controlling the time using plasma-enhanced chemical vapor deposition; and (v) processing the silicon slice by a conventional process of the crystalline silicon solar cell.    USE - The method is useful in producing a low-purity mono-crystalline silicon solar cell.    ADVANTAGE - The low-purity mono-crystalline silicon solar cell overcomes the defect that the leakage current of the cell manufactured through the conventional method for manufacturing the crystalline silicon solar cell is over large so as not to be applicable to use.    DETAILED DESCRIPTION - Manufacturing of low-purity mono-crystalline silicon solar cell, comprises (i) inserting a silicon slice having the purity of 4-5.5 N in a quartz boat and burning the silicon slice for 25-35 minutes at 950-1250 degrees C; (ii) cleaning the forged silicon slice with an acid; (iii) texturing the surface of the cleaned silicon slice to form a matte surface of pyramid structure on the surface of the silicon slice, where the average width of the tower bottom of the matte surface of pyramid structure is 15-25 microns, and the average height of the matte surface of pyramid structure is 1-4 microns; (iv) plating an intrinsic silicon film of 0.1-10 microns by introducing the silane and argon gas in a ratio of 1:10 to 10:1 and controlling the time using plasma-enhanced chemical vapor deposition, where the temperature of the substrate should be greater than 800 degrees C during the plating of the film; and (v) processing the silicon slice by a conventional process of the crystalline silicon solar cell after the plating of the film to form the low-purity mono-crystalline silicon solar cell, where the conventional process mainly comprises diffusion, plasma etching, phosphosilicate glass removing, plating of silicon nitride film by plasma enhanced convention vapor deposition and screen printing.