NOVELTY - A photoelectric conversion device (D1) (1) comprises lower electrode (20), photoelectric-conversion semiconductor layer (L1) (30) of compound semiconductor material, and upper electrode (50) formed in order on anodized substrate (10), where anodized oxide film as electrically insulating film is formed on aluminum base arranged at surface(s) of metal substrate. The layer (L1) contains as main component at least one compound semiconductor material having chalcopyrite structure comprising at least one Group IB element, at least one Group IIIB element, and at least one Group VIB element.    USE - Photoelectric conversion device (D1) is used for solar cell (claimed).    ADVANTAGE - The device (D1) uses metal substrate and exhibits superior photoelectric conversion efficiency, and in which a photoelectric conversion layer is satisfactorily doped with alkali metal with high reproducibility; and has reduced distortion, and in which occurrence of cracks, film peeling, and the like is suppressed.    DETAILED DESCRIPTION - Photoelectric conversion device (D1) (1) comprises lower electrode (20), photoelectric-conversion semiconductor layer (L1) (30) of compound semiconductor material, and upper electrode (50) formed in order on anodized substrate (10), where anodized oxide film as electrically insulating film is formed on aluminum base arranged at surface(s) of metal substrate. The lower electrode is formed on anodized oxide film. The layer (L1) contains as main component at least one compound semiconductor material having chalcopyrite structure comprising at least one Group IB element, at least one Group IIIB element, and at least one Group VIB element. The device (D1) includes at least one alkali supply layer which is insulative and formed between anodized substrate and lower electrode containing at least one of alkali and alkaline earth metal elements which supplies at least one of alkali and alkaline earth metal elements to layer (L1) during formation of layer (L1); and at least one antidiffusion layer which is electrically insulative and formed between anodized substrate and at least one alkali supply layer, and suppresses diffusion, toward anodized substrate, of at least one of alkali and alkaline earth metal elements contained in at least one alkali supply layer. An INDEPENDENT CLAIM is included for producing the device (D1) which comprises before formation of the lower electrode, forming, on side of anodized oxide film on which lower electrode is to be formed, at least one antidiffusion layer which is insulative, and suppresses diffusion, toward anodized substrate, of at least one of alkali and alkaline earth metal elements contained in at least one alkali supply layer; and forming, over at least one antidiffusion layer, at least one alkali supply layer which is insulative, contains at least one of alkali and alkaline earth metal elements, and supplies at least one of alkali and alkaline earth metal elements to layer (L1) during formation of layer (L1).    DESCRIPTION OF DRAWING(S) - The drawing is a schematic cross-sectional view illustrating a photoelectric conversion device.    Photoelectric conversion device (1)    Anodized substrate (10)    Lower electrode (20)    Photoelectric-conversion semiconductor layer (30)    Upper electrode (50)