TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: In the device, the antireflection layer contains hollow silica particles as the low-refractive-index particles. The antireflection layer is formed above the light-receiving surface so that lower refractive-index particles are distributed than the binder resin as a distance from the light-receiving surface increases. The on-chip lenses are convex lenses that protrude upward in a convex shape from the light-receiving surface and are disposed adjacent to each other so as to correspond to the photoelectric converters; and the antireflection layer is provided so as to cover upper surfaces of the on-chip lenses. The antireflection layer is provided so that a first film thickness of concave portions depressed between the on-chip lenses is larger than a second film thickness of top portions of the on-chip lenses, the top portions protruding in a convex shape. The antireflection layer is provided on the upper surfaces of the on-chip lenses so that a surface of the antireflection layer becomes flat along the image capture surface of the substrate. The antireflection layer comprises at least: a first antireflection layer provided on the upper surfaces of the on-chip lenses; and a second antireflection layer provided above the first antireflection layer; where each of the first antireflection layer and the second antireflection layer has the low-refractive-index particles and the binder resin; and the low-refractive-index particles contained in the second antireflection layer are more than the low-refractive-index particles contained in the first antireflection layer. Alternatively, the solid-state image capture device comprises: a photoelectric converter provided in an image capture area of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to generate signal charge; and an on-chip lens provided in the image capture area of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; where the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin. The on-chip lens contains hollow silica particles as the low-refractive-index particles. Preferred Apparatus: alternatively, the electronic apparatus comprises: a photoelectric converter provided in an image capture area of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to generate signal charge; and an on-chip lens provided in the image capture area of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface, where the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin. Preferred Method: Alternatively, manufacturing a solid-state image capture device comprises: providing a photoelectric converter at an image capture surface of a substrate, the photoelectric converter receiving incident light at a light-receiving surface of the photoelectric converter and photoelectrically converting the incident light to generate signal charge; and providing an on-chip lens above the light-receiving surface of the photoelectric converter, the on-chip lens focusing the incident light onto the light-receiving surface, where the on-chip lens contains a binder resin and low-refractive-index particles having a lower refractive index than the binder resin.