NOVELTY - Forming an intrinsic type microcrystalline silicon layer comprises: providing a substrate into a processing chamber (300); supplying a gas mixture into the processing chamber; applying a radio frequency (RF) power at a first mode to the gas mixture; pulsing the gas mixture into the processing chamber; and applying the RF power at a second mode to the pulsed gas mixture.    USE - The method is useful for forming an intrinsic type microcrystalline silicon layer which is useful in: a photoelectric device (all claimed); and in a multi-junction solar cell or a single junction solar cell.    ADVANTAGE - The photoelectric device comprising the intrinsic type microcrystalline silicon seed layer has a higher crystalline fraction than the bulk intrinsic type microcrystalline silicon layer. The method produces intrinsic type microcrystalline silicon layer having high crystalline fraction, crystalline uniformity, photoelectric conversion efficiency, device performance of the photovoltaic solar cell, high deposition rate and low manufacturing cost.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a photoelectric device comprising: a p-type silicon containing layer; the intrinsic type microcrystalline silicon layer disposed on the p-type silicon containing layer; and a n-type silicon containing layer disposed on the intrinsic type microcrystalline silicon layer; and    (2) a method (I) for forming an intrinsic type microcrystalline silicon layer comprising: providing a substrate into a processing chamber; gradually ramping up a flow rate of a gas mixture supplied into the processing chamber for a first predetermined time period; synchronously ramping up a RF power supplied into the gas mixture while ramping up the flow rate of the gas mixture; and depositing an intrinsic type microcrystalline silicon seed layer on the substrate surface.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the apparatus.    Plasma enhanced chemical vapor deposition chamber (300)    Gas source (320)    RF power source (322)    Remote plasma source (324)    Substrate support (330)