NOVELTY - A metal paste (a) having fire-through capability is printed on arc layer and dried. Then, metal paste (b) is printed over bottom set of finger lines and dried, to form top set of finger lines superimposing bottom set of finger lines, and double-printed silicon wafer is heated. The paste (a) comprises organic component and inorganic component comprising at least one electroconductive metal powder and glass frit (0.5-8 wt.%). Thus, formation of grid electrode on front-side of silicon wafer having a p-type region, n-type region, p-n junction and arc layer is carried out.    USE - Formation of grid electrode on front-side of silicon wafer used for silicon solar cell (both claimed).    ADVANTAGE - The silicon solar cell comprising silicon wafer having grid electrode has improved efficiency.    DETAILED DESCRIPTION - A metal paste (a) having fire-through capability is printed on arc layer and dried, where the metal paste (a) is printed in a grid pattern which comprises thin parallel finger lines forming a bottom set of finger lines, and two or more parallel busbars intersecting the finger lines at right angle. Then, metal paste (b) is printed over the bottom set of finger lines and dried, to form top set of finger lines superimposing the bottom set of finger lines, and the double-printed silicon wafer is heated. The metal paste (a) comprises an organic component and an inorganic component comprising at least one electroconductive metal powder chosen from silver, copper and nickel, and glass frit (0.5-8 wt.%). The metal paste (b) comprises an organic component and inorganic component comprising at least one electroconductive metal powder chosen from silver, copper and nickel, and glass frit (0-3 wt.%). The inorganic component of metal paste (b) contains less glass frit and inorganic additives other than the inorganic component of metal paste (a). Thus, formation of grid electrode on front-side of silicon wafer having a p-type region, n-type region, p-n junction and arc layer on front-side is carried out.