TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: In the surface passivation of a silicon semiconductor, the dielectric layer is deposited by use of plasma-enhanced chemical vapor deposition. The precursor gases are silane (SiH4) and ammonia (NH3); the temperature in the deposition chamber is kept at 50-500 degrees C; and the dopant forming gas is a gaseous compound containing boron. The precursor gases are SiH4 and one of nitrious oxide (N2O) or an organic silicon containing precursor and oxygen (O2); the temperature in the deposition chamber is kept at 50-500 degrees C; and the dopant forming gas is a gaseous compound containing boron. The dopant forming gas is also diborane (B2H6). The temperature in the deposition chamber is kept at 250-400 degrees C; and the thickness of the deposited film is 40-200 nm. The method also comprises forming a first dielectric layer onto the semiconductor of amorphous silicon or silicon dioxide, and depositing the silicon nitride layer as the second dielectric layer. Deposition of the dielectric layer is performed by employing SiH4 and one of N2O or a silicon containing organic precursor and O2 as precursor gases to form a first dielectric layer of SiO2 on the semiconductor; and employing SiH4, NH3, and B2O6 as precursor gases to form a p-type doped silicon nitride layer onto the first dielectric layer, and employing SiH4 and NH3 as precursor gases to form a non-doped silicon nitride layer onto the p-typed doped silicon nitride layer. Preferred Solar Cell: The semiconductor wafer contains a first dielectric layer of doped amorphous silicon or doped silicon dioxide with thickness of 2-500 nm, and which is doped with boron in a concentration providing a negative charge density of 109 to 1015 cm2; a doped silicon nitride layer onto the first dielectric layer, which have thickness of 10-200 nm and which is doped with boron in a concentration providing a negative charge density of 109 to 1015 cm2; and a final non-doped silicon nitride layer onto the doped silicon nitride layer, and which has thickness of 2-500 nm. The semiconductor wafer contains a first dielectric layer of amorphous silicon with thickness of 2-200 nm; a second dielectric layer of silicon dioxide with thickness of 10-200 nm; and a third dielectric layer of silicon nitride with thickness of 2-500 nm; and where the first, second, or third dielectric layer is doped with boron in a concentration providing a negative charge density of 109 to 1015 cm2.