NOVELTY - The micro/nanostructure PN junction diode array thin-film solar cell comprises a first transparent substrate (30), a thin-film N-type semiconductor (31) joined to the first transparent substrate, a semiconductor micro/nanostructure array (11), whose one side is joined to the thin-film N-type semiconductor, a thin-film P-type semiconductor (41) joined to another side of the semiconductor micro/nanostructure array, and a second transparent substrate (40) joined to the thin-film P-type semiconductor. A transparent non-conductive material is filled into gaps of the micro/nanostructure array.    USE - The micro/nanostructure PN junction diode array thin-film solar cell is useful in building integrated photovoltaics, boats, vehicles, portable power supplies for mobile phones or notebook computers, consumer electronics, and fabrics e.g. clothes, curtains, sun shelters and bags.    ADVANTAGE - The micro/nanostructure PN junction diode array thin-film solar cell can be economically and easily fabricated in large-scale with lightweight, flexible and impact-resistant material, less energy consumption, reduced material consumption, high quality, high reliability and high photoelectric conversion efficiency.    DETAILED DESCRIPTION - The micro/nanostructure PN junction diode array thin-film solar cell comprises a first transparent substrate (30), a thin-film N-type semiconductor (31) joined to the first transparent substrate, a semiconductor micro/nanostructure array (11), whose one side is joined to the thin-film N-type semiconductor, a thin-film P-type semiconductor (41) joined to another side of the semiconductor micro/nanostructure array, and a second transparent substrate (40) joined to the thin-film P-type semiconductor. A transparent non-conductive material is filled into gaps of the semiconductor micro/nanostructure array. Each of the thin-film N-type semiconductor and the thin-film P-type semiconductor and the semiconductor micro/nanostructure array are made of a material consisting of elemental semiconductor, binary compound semiconductor, ternary compound semiconductor and/or quaternary compound semiconductor. Each of the first transparent substrate and the second transparent substrate is made of a material consisting of a plastic plate, a glass plate, a quartz plate, a plastic plate coated with a transparent conductive film, a glass plate coated with a transparent conductive film and a quartz plate coated with a transparent conductive film. A longitudinal section of the semiconductor micro/nanostructure array has a width of 1 nm to 3000 mu m, and a length of 50 nm to 50 mu m. The semiconductor micro/nanostructure array is made of N-type semiconductor material, is an array of diodes each having PN junctions, and absorbs different wavebands of sunlight, where outmost P-type portions of the diodes are joined to the thin-film P-type semiconductor and outmost N-type portions of the diodes are joined to the thin-film N-type semiconductor. Another micro/nanostructure PN junction diode array thin-film solar cell is stacked on the micro/nanostructure PN junction diode array thin-film solar cell to form a stack structure. A thin metal layer is formed in between the first transparent substrate and the thin-film N-type semiconductor or in between the second transparent substrate and the thin-film P-type semiconductor. A vacuum process is used to form the thin metal layer, and temperature used by the vacuum process depends on a heat-resistant capability of the first transparent substrate or the second transparent substrate. The thin metal layer is made of a metallic material having a work function with respect to energy levels of the semiconductor micro/nanostructure array. An INDEPENDENT CLAIM is included for a method for fabricating a micro/nanostructure PN junction diode array thin-film solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a micro/nanostructure PN junction diode array thin-film solar cell.    Semiconductor micro/nanostructure array (11)    First transparent substrate (30)    Thin-film N-type semiconductor (31)    Second transparent substrate (40)    Thin-film P-type semiconductor. (41)