NOVELTY - Manufacture of a photoelectric conversion device comprises transferring a substrate (121) on which a first semiconductor film is formed through a first slit (113a-113g); transferring the substrate on which a second semiconductor film is formed through a second slit; and forming a third semiconductor film having opposite conductivity to the first semiconductor film over the second semiconductor film. Each of the first slit and the second slit is provided with touch roller(s) (112, 114a-114g), which is in contact with a surface of the substrate on which the semiconductor film is formed.    USE - Method of manufacturing photoelectric conversion device i.e. solar battery or photosensor (claimed) for use in an electronic appliance and semiconductor device. The solar battery is an integrated solar battery. Uses include but are not limited to computer, display device such as TV receiver, cellular phone, TV, digital camera, projection TV, and navigation system.    ADVANTAGE - The method suppresses occurrence of curled substrate in film formation, so that a substrate can be transferred smoothly; and provides highly reliable photoelectric conversion device by suppressing occurrence of damage in a light receiving region. The film is formed over a surface opposite to light receiving region over the substrate so that the touch roller is in contact with the film formation surface. Thus, damage to the light receiving region of a component can be prevented. The film formation apparatus having high stability for transfer can be obtained.    DETAILED DESCRIPTION - Manufacture of a photoelectric conversion device comprises:    (A) sending a substrate (121) from a roller for sending a substrate, which is provided in a first transfer chamber (101);    (B) forming a first semiconductor film over the substrate by making the substrate pass through a first discharging electrode provided in a first film formation chamber (103);    (C) transferring the substrate on which the first semiconductor film is formed through a first slit (113a-113g) provided in a first buffer chamber;    (D) forming a second semiconductor film over the first semiconductor film by making the substrate pass through a second discharging electrode provided in a second film formation chamber (104);    (E) transferring the substrate on which the second semiconductor film is formed through a second slit provided in a second buffer chamber;    (F) forming a third semiconductor film having opposite conductivity to the first semiconductor film over the second semiconductor film by making the substrate pass through a third discharging electrode provided in a third film formation chamber (105); and    (G) rewinding the substrate over which the first to third semiconductor films are formed by a roller for rewinding a substrate, which is provided in a second transfer chamber (106), where each of the first slit and the second slit is provided with touch roller(s) (112, 114a-114g), which is in contact with a surface of the substrate on which the semiconductor film is formed.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic view of a film formation apparatus.    First transfer chamber (101)    First film formation chamber (103)    Second film formation chamber (104)    Third film formation chamber (105)    Second transfer chamber (106)    Touch roller (112, 114a-114g)    Slit (113a-113g)    Substrate (121)