TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: In the process, saturation of a conductive layer with a metal promoter as saturation material, comprises (a) providing a metallic conductive layer with a predetermined temperature stability limit (TG) in the form of a metallic substrate or by coating a substrate with a metallic conductive component, compound or alloy, (b) applying a saturation layer made of a metal promoter with a layer thickness (d1) on the metallic conductive layer, (c) tempering the saturation layer at a tempering temperature (TT) less than (TG), (d) applying the metal promoter layer with a predetermined eutectic temperature (T-eutectic) in a metal-chalcogen-eutectic with a layer thickness (d2) on the metallic conductive layer, (e) applying a chalcogen-rich, X-ray layer lattice-semiconductor with a layer thickness (d3) in a gas atmosphere containing chalcogen at a process pressure (pp) and (f) heating the saturated metallic conductive layer to a process temperature (TH) with (T-eutectic) less than (TH) less than (TG) in the gas atmosphere containing chalcogen at at least one process pressure (pT). In the process, a saturation of the metallic conductive layer with oxygen as saturation material, comprises reactive sputtering of a metallic conductive component, compound (preferably titanium oxynitride compound of formula (TiNxOy)) or alloy on a substrate with the addition of oxygen with such a low proportion, but metallic conductive layer with a given temperature stability limit (TG) is formed, and the process steps (d)-(f). The process comprises application of the saturation layer, metallic conductive layer, metal promoter layer and/or precursor metal layer by vapor deposition or magnetron sputtering.x = 0.3-0.45; andy = 0.1-0.3.Preferred Components: The process uses oxidized silicon, quartz, ceramic or sapphire as a substrate, titanium nitride, titanium tungstate, titanium disilicide, tantalum, tantalum nitride, tantalum nitride:oxygen, tungsten nitride or tungsten nitride:oxygen as a metal compound, molybdenum or tungsten as metal component, nickel, cobalt or palladium as metal promoter, hydrogen sulfide, hydrogen selenide or hydrogen telluride as chalcogen gas, argon as atmosphere gas and tungsten disulfide, tungsten diselenide, tungsten ditelluride, molybdenum disulfide, molybdenum diselenide or molybdenum telluride as chalcogen based layer lattice-semiconductor (transition-) metal chalcogenide. The process is characterized by a temperature stability limit (TG) of 700 degrees C, a tempering temperature (TT) of 600 degrees C, a eutectic temperature (T-eutectic) of less than 700 degrees C, a layer thickness (d1) approximately (d2) of 5-50 nm, a layer thickness (d3) of 100-500 nm, a layer thickness (s) of 0.5-1 mu m, a sulfur-rich (tungsten(VI) sulfide+z) (where z is not defined) as chalcogen-rich, X-ray layer lattice-semiconductor, hydrogen sulfide and argon as gas atmosphere containing chalcogen as a hydrogen sulfide content in a range of 50%, a process pressure (pp) of 2 Pa and a process pressure (pT) of 10 Pa. EXAMPLE - No suitable example given.