NOVELTY - The thin film copper indium gallium selenide solar cell structure comprises a stainless steel flexible foil substrate (20), a II-VI compound semiconductor layer formed over the stainless steel flexible foil substrate, and a transparent layer formed on the II-VI compound semiconductor layer. The II-VI compound semiconductor layer comprises an IIBVIA material layer. The thickness of the stainless steel flexible foil substrate is 25-125 mu m. A contact layer (21) disposed between the stainless steel flexible foil substrate and IIBVIA material layer.    USE - Used as thin film copper indium gallium selenide solar cell structure.    ADVANTAGE - The thin film copper indium gallium selenide (CIGS) solar cell structure can be economically and easily manufactured with enhanced efficiency and high yield, and avoids the defects such as micro-cracks, pinholes and adhesion failures between the substrate and the CIGS layer.    DETAILED DESCRIPTION - The thin film copper indium gallium selenide solar cell structure comprises a stainless steel flexible foil substrate (20), an II-VI compound semiconductor layer formed over the stainless steel flexible foil substrate, and a transparent layer formed on the II-VI compound semiconductor layer. The II-VI compound semiconductor layer comprises an IIBVIA material layer. The thickness of the stainless steel flexible foil substrate is 25-125 mu m. A contact layer (21) disposed between the stainless steel flexible foil substrate and IIBVIA material layer. The II-VI compound semiconductor layer comprises an IBIIIAVIA material layer. A terminal layer is formed over the transparent conductive layer, and includes a busbar and conductive fingers attached to the busbar. An INDEPENDENT CLAIM is included for a method of fabricating a thin film solar cell.    DESCRIPTION OF DRAWING(S) - The figure shows a solar cell structure using a stainless steel foil substrate.    Flexible foil substrate (20)    Contact layer (21)    Base (22)    Absorber layer (23)    Transparent conductive layer. (24)