TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: In the electronic device, the graphene layer and the hexagonal boron nitride layer are rolled together to form a capacitor material of alternating graphene and hexagonal boron nitride layers. The electronic device is a high electron mobility transistor for high frequency communication.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: In the method (M1), mixing the carbon source with the molten solvent involves applying the carbon source to a solidified solvent layer; and heating the solidified solvent layer under vacuum to melt the solidified solvent layer into a molten solvent such that the molten solvent and carbon atoms from the carbon source form a eutectic liquid. The precipitation of the carbon source from the molten solvent includes maintaining the molten solvent and the carbon source in a eutectic liquid state to allow the graphite layer to form across all of the molten solvent. The method further involves removing all impurities from the graphite; doping the graphene layer with a dopant; and pre-selecting the size and shape of the horizontally oriented molten solvent to produce several graphene layers having a predetermined size and shape. In the method (M2), mixing of the boron nitride source with a molten solvent involves applying the boron nitride source to a solidified solvent layer; and heating the solidified solvent layer in a nitrogen atmosphere to melt the solidified solvent layer into a molten solvent such that the molten solvent and boron and nitrogen atoms from the boron nitride source form a eutectic liquid. The method of precipitating the boron nitride source from the molten solvent includes maintaining the molten solvent and the boron nitride source in a eutectic liquid state to allow the hexagonal boron nitride layer to form across substantially all of the molten solvent. The method further involves doping the hexagonal boron nitride layer with a dopant. Preferred Components: The graphene layer has a predetermined size and shape. The carbon source is highly graphitized graphite. The molten solvent includes a member selected from chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), tantalum (Ta), palladium (Pd), platinum (Pt), lanthanum (La), cerium (Ce), europium (Eu), and/or associated alloys (preferably Ni). The molten solvent includes a substantially less reactive compound that reduces the reactivity of the molten solvent as compared to the molten solvent without the substantially less reactive compound. The substantially less reactive compound is a member selected from gold (Au), silver (Ag), copper (Cu), lead (Pb), tin (Sn), zinc (Zn), and/or their alloys (preferably Cu). The impurities include members selected from oxygen (O) and/or nitrogen (N). The dopant is a member selected from boron (B), phosphorus (P), N, and/or metal atoms. The graphene layer is coupled to a polished silicon wafer. The graphene layer is etched to form electrical interconnects. The molten solvent includes a member selected from lithium (Li), sodium (Na), potassium (K), rubidium (Rb), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), lithium hydride (LiH), lithium nitride (Li3N), Na3N, Mg3N2, Ca3N3, and/or alloys. The composite material comprises several alternating graphene layers and hexagonal boron nitride layers. The alternating layers are rolled into a cylindrical shape. The composite material has a predetermined size and shape. EXAMPLE - A graphite block was machined to form a disk-shaped depression with a depth of 3 mm. A pure nickel plate having a thickness of 1 mm was placed in the depression. Ultra pure graphite was spread over the nickel plate, and the assembly was placed in a tube furnace. A vacuum was applied to the tube furnace to 10-5 Torr. The nickel was then fully melted at 1500 degrees C. The nickel maintained in the melted state for 30-60 minutes. The temperature was controlled such that the graphite side was 50 degrees C hotter than the bath of the molten nickel. Such a temperature disparity reduces convection of the liquid that may disturb the formation of the forming graphene lattice. The furnace was then slowly cooled and the resulting graphene layer was then peeled from the cooled nickel plate. Thus, a graphene layer was formed.