NOVELTY - A thick film composition (C1) comprises at least one metal that are reactive with silicon nitride selected from titanium, zirconium, hafnium, vanadium, niobium, and/or tantalum; at least one non-reactive metal selected from silver, tin, bismuth, lead, antimony, arsenic, zinc, germanium, nickel, phosphorus, gold, cadmium, and beryllium in an organic medium; where the reactive metals and non-reactive metals are in the form of particles having an average diameter of 100 nm to 50 mu m.    USE - For producing a photovoltaic cell; for producing silicon solar cell having front face electrode contacts (claimed).    ADVANTAGE - The composition provides superior reduction in contact resistance and maintains adhesion. The thick film composition has suitable consistency and rheology for printing; lend good application properties including: stable dispersion of metal powders, appropriate viscosity and thixotropy for screen printing, appropriate paste wettability of the substrate, and a good drying rate.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) making (M1) a photovoltaic device involving providing a silicon substrate having an n-type silicon layer, forming a silicon nitride layer on the n-type silicon layer of the silicon substrate; placing a reactive metal in contact with the silicon nitride layer, placing a non-reactive metal in contact with the reactive metal, firing the silicon substrate, silicon nitride layer, reactive metal and non-reactive metal to form a low Shottky barrier height contact to the n-type silicon layer and conductive metal electrode in contact with the low Shottky barrier height contact, the low Shottky barrier height contact comprising at least one metal nitrides;    (2) making (M2) a silicon solar cell involving providing a silicon substrate having an n-type silicon layer, forming a silicon nitride antireflective layer on the n-type silicon layer of the silicon substrate; placing a reactive metal in contact with the silicon nitride antireflective layer, firing the silicon substrate, silicon nitride layer, and reactive metal to form a low Shottky barrier height contact to the n-type silicon layer, the low Shottky barrier height contact containing at least one metal nitride;    (3) a silicon solar cell having front face electrode contacts formed from the composition (C1); and    (4) a photovoltaic device comprising a silicon substrate comprising an n-type silicon layer; low Shottky barrier height contact disposed on and adhered to the n-type silicon layer, the contact comprised of a metal suicide where the metal is titanium, zirconium, hafnium, vanadium, niobium, and/or tantalum; a conductive metal electrode adhered to and disposed on the low Shottky barrier height contact.