NOVELTY - An integrated semiconductor structure includes bypass diode for passing current when multijunction solar cell (100) is shaded; and deposited metal layer (107) connecting the multijunction solar cell and bypass diode. The bypass diode is on the same substrate (104) as the multijunction solar cell. Each semiconductor layer in the bypass diode has the same composition and thickness as the corresponding layer in bottom subcell, subject to normal manufacturing variations.    USE - Integrated semiconductor structure i.e. solar cell semiconductor device (claimed).    ADVANTAGE - The mechanism of activating, or turning on the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell; and additional manufacturing is not required. A monolithic integral bypass diode that can be manufactured with a high rate of efficiency and when operable will require less voltage than prior art devices is provided. The effect of the metal layer is to short the Ge junction to the base of the Ge cell. Because of the short, a minimal voltage is required to pass current between the lateral conduction layer and the Ge substrate. No longer is a high voltage required to force the current through the Ge junction. The current flows easily through the short path. If the solar cell is shaded, no longer is the cell forced into reverse bias to pass the current of the array string. There is a much less resistive path, requiring a much lower voltage drop, for the current to pass through the bypass diode. The processing steps of integrated semiconductor structure are reduced compared to the '054 patent, as the bypass diode layers are grown internally to the buffer layers (103) of the cell, rather than as additional layers that have to be grown on top of the cell (as in the '054 patent). The integrated semiconductor structure provides for a low bypass diode turn on, as well as a low series resistance bypass diode. The process by which the diode is manufactured is integral to the manufacturing of the cell; and does not require additional manufacturing steps or additional layers to be grown on the cell.    DETAILED DESCRIPTION - An integrated semiconductor structure comprises a multijunction solar cell (100) including a first photoactive junction formed in a substrate (104) forming a bottom subcell, where there are no subcells located between the bottom subcell and the lower surface of the substrate, and a second photoactive junction formed in a region overlying the bottom subcell and forming a second subcell; and bypass diode for passing current when the multijunction solar cell is shaded. The bypass diode is on the same substrate as the multijunction solar cell. The bypass diode and the bottom subcell have an identical sequence of semiconductor layers. Each semiconductor layer in the bypass diode has the same composition and thickness as the corresponding layer in the bottom subcell, subject to normal manufacturing variations. The bypass diode is electrically connected in parallel across the multijunction solar cell. The bypass diode has a Schottky junction. The integrated semiconductor structure comprises deposited metal layer (107) connecting the multijunction solar cell and bypass diode, where the deposited metal layer is contained within the semiconductor structure and entirely on a surface of the bypass diode; and a first discontinuous lateral semiconductor conduction layer (113) directly on the substrate, where first discontinuous lateral semiconductor conduction layer includes a first portion in the bypass diode to electrically contact the metal layer disposed on a side of the discontinuous lateral conduction layer, and a second portion in the bypass diode that is laterally spaced away from the first portion, to electrically contact an active region of the bypass diode. The second portion of the lateral conduction semiconductor layer includes a first region that directly and electrically contacts a first indium gallium phosphide (InGaP) layer of the bypass diode; and a second region laterally spaced apart from the first region that directly and electrically contacts a first metal layer.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic view of multijunction solar cell after the completion of all processing steps.    Multijunction solar cell (100)    Buffer layers (103)    Substrate (104)    Metal layer (107)    Lateral semiconductor conduction layer (113)