NOVELTY - The method involves forming a reflection barrier layer (130) at an upper part of a selective emitter layer (120) and removing a patterned porosity mask layer (110') that is made of oxide, nitride, fluoride, alkaline series or chlorine. The barrier layer is formed with a groove (G) of a front electrode (142). A back contact electrode (144) is formed at a back side of a silicon substrate (100). Thermal processing is carried out on the back electrode to heat-treat the back electrode, so that the front electrode and the back electrode are electrically connected in the substrate.    USE - Method for fabricating a buried contact solar cell.    ADVANTAGE - The method enables formation of the mask layer in the substrate by etching process and performing groove formation process in a semiconductor substrate in which the mask layer is not in contact, thus preventing service life of a carrier from decreasing. The method enables simultaneously performing surface texturing process and groove formation process of the substrate, thus streamlining fabricating process. The method enables forming the emitter layer by doping process by utilizing the mask layer as a diffusion stopper film, thus manufacturing the buried contact solar cell in an inexpensive manner. The method allows performance of diffusion process and thermal process to prevent quality degradation of the substrate.    DETAILED DESCRIPTION - The porosity mask layer is formed in the semiconductor substrate by sputtering, plasma etching process, anodization, acid/alkaline wet etching, dry etching, reactive ion etching, electrochemical etching, chemical vapor deposition, evaporation, spin coating, ink jetting, screen printing, photo-lithography, laser ablation method, or thermal oxidation method.    DESCRIPTION OF DRAWING(S) - The drawing shows a process flow diagram of a method for fabricating a buried contact solar cell.    Groove (G)    Silicon substrate (100)    Patterned porosity mask layer (110')    Selective emitter layer (120)    Reflection barrier layer (130)    Front electrode (142)    Back contact electrode (144)