NOVELTY - Device comprises a multilayer active layer having many metal chalcogenide films, where each films prepared by: (a) contacting an isolated hydrazinium-based precursor of a metal chalcogenide and solvent having a solubilizing additive to form solution of complex; (b) applying solution of complex onto a substrate to produce a coating of the solution; (c) removing solvent to produce a film of the complex on substrate; and (d) annealing film of the complex to produce a film on substrate; and (e) repeating steps (a)-(d) with the same or different chalcogenide to produce the multilayer film.    USE - The device is useful as thin-film transistors (e.g. switching elements in electronic applications, most notably for logic and driver circuitry within processor and display applications, lower end application employed in active matrix liquid crystal displays), light-emitting devices and data storage media, and for device application in solar cells, thermoelectric or transistor devices.    ADVANTAGE - The device yields the highest mobilities currently reported for an n-type spin-coated device. The process is much lower cost than the traditional molecular beam epitaxy or vacuum evaporation approaches currently used for creating multilayer structures. The method of solution-depositing chalcogenide-based electronic materials in the form of high-quality thin films opens the opportunity to employ a number of low-cost, low-temperature, relatively quick techniques comprising spin-coating, printing, stamping, and dipping. The process of preparing the chalcogenide films without the use of hydrazine as the solvent would overcomes the high toxicity and reactivity concerns and simultaneously reduces the environmental impact and manufacturing cost of the fabricated films, without the need for additional specialized equipment which otherwise would be required to handle a toxic solvent such as hydrazine.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic diagram of a thin-film transistor device structure employing a spin-coated metal chalcogenide semiconductor as the channel material.