NOVELTY - A silicon-base thin film deposition method comprises (A) dividing clearing process for stainless steel substrates or glass substrates; (B) processing the surface of substrates and transparent conductive oxide (TCO) layers; (C)coating crystallite nucleating layer; and (D) preparing high-quality microcrystalline silicon thin films or amorphous silicon thin films. The step (D) includes deposition of microcrystalline silicon thin films and deposition of amorphous silicon thin films.    USE - Silicon-base thin film deposition method is used for making thin film solar batteries.    ADVANTAGE - The method can uniformly deposit high-quality silicon-base thin films with different energy gap widths on large-area glass substrates, stainless steel substrates or macromolecule substrates at temperature of not greater than 400 degrees C.    DETAILED DESCRIPTION - Silicon-base thin film deposition method comprises (A) dividing clearing process for stainless steel substrates or glass substrates; (B) processing the surface of substrates and transparent conductive oxide (TCO) layers; (C) coating crystallite nucleating layer; and (D) preparing high-quality microcrystalline silicon thin films or amorphous silicon thin films. The step (A) includes cleaning substrates with solution where volume ratio of hydrochloric acid, hydrogen peroxide (H2O2) and water is 10:0.8-1.2:48-52 at 60-70 degrees C for 5-10 minutes; cleaning substrates with solution where volume ratio of ammonium hydroxide and H2O2 and water is 10:0.8-1.2:48-52 at 60-70 degrees C for 5-10 minutes; and cleaning substrates with clear water, where general macromolecular substrates and TCO layers need no cleaning. The step (B) includes using surface plasma process or reacting with hydrofluoric acid or hydrochloric acid (0.2-0.6%) to form U-shaped surface, where middle part of which is lower and periphery of which is higher to avoid forming pores, cavities and gaps in deposited amorphous silicon and microcrystalline silicon. The step (C) includes using 13.6-40 kHz high frequency high energy plasma with 400-800 W radio frequency power and volume flow ratio of hydrogen gas (H2)/silicon hydride (SiH4) is 100/1:10/1, and forming thin crystallite nucleating layer on surface of the substrates at 350-400 degrees C and air pressure of settling chamber of 2-5 Pa. The step (D) includes deposition of microcrystalline silicon thin films at plasma radio frequency power of 400-800 W, radio frequency of 13.6-40 KHz, volume flow ratio of H2/SiH4 of 20-90:1, and air pressure of settling chamber of 3- 12 Pa; and deposition of amorphous silicon thin films at plasma radio frequency of 13.6-20 KHz, radio frequency power of 50-300 W, volume flow ratio of H2 or He/SiH4 of 10:1-2:1, temperature of 200-350 degrees C, and air pressure of settling chamber of 100-1000 Pa.