TECHNOLOGY FOCUS - MECHANICAL ENGINEERING - Preferred Method: In manufacturing the solar cell panel, the consecutive treatments comprising deposition of a layer of silicon nitride (SiN):hydrogen (H) by one of chemical vapor deposition (CVD) or physical vapor deposition (PVD) on a silicon wafer, by multiple subsequent treatment stations. Also, the consecutive treatments comprises deposition of a first layer of SiN:H in a first number of subsequent treatment stations and deposition on the first layer of a second layer of SiN in a second number of subsequent treatment stations, the second number being selected to be larger than the first number, preferably by a factor of 5. The consecutive treatments comprising deposition of a first layer of SiN:H in a first number of subsequent treatment stations, on it of a second layer of zinc sulfide (ZnS)-silicon oxide (SiO2) in a second number of subsequent treatment stations, on it of a third layer of SiO2 in a third number of subsequent treatment stations, thus selecting the first and second number to be equal, and/or thus selecting the third number to be larger than the first number, preferably by a factor of 4. The consecutive treatments comprising deposition of a layer of one of the following materials: aluminum (Al), aluminum nitride (AlN), aluminum oxide (Al2O3), ITO, ITO:H, chromium oxide (CrO2), germanium nitride (GeN), silicon carbide (SiC), silicon oxynitride (SiON), SiO2, silicon aluminum oxynitride (SiAlON), silicon nickel oxynitride (SiNiON), titanium oxide (TiO2), zinc-aluminum-oxide (ZAO), magnesium fluoride (MgF2), zinc nitrogen oxide (ZNO), silver (Ag), gold (Au), AuSn, AuGe, copper (Cu), chromium (Cr), nickel (Ni), NiV, titanium (Ti), a-Si, SiGe, zinc sulfide (ZnS), SiN:H, SiN. The consecutive treatments comprise at least one of: single-source PVD sputtering; multisource PVD sputtering; plasma-enhanced CVD (PECVD); low-energy plasma CVD (LEPCVD); etching; cooling; and degassing. The substrate is looped more than one time through at least a part of the subsequent treatment stations. The consecutive treatments comprising deposition of layers on both sides of a substrate. The layers being a first layer of one of SiN, SiC, SiO2, a-Si and a second layer of one of Al and of Ag. The first layer being deposited from SiN in a first number of subsequent treatment stations, the second layer is deposited of Al in a second number of subsequent treatment stations, where the second number is selected to be larger than the first number, preferably by a factor of 5.