NOVELTY - The substrate processing system comprises an evacuatable process chamber (20), in which an etching gas-resistant substrate carrier (30) having a substrate (40) is introduced, a plasma generating module (50), a gas supply (61), a gas discharge (62), a high-frequency steam etching module integrated in the process chamber, and an etching gas-resistant inner lining. The steam etching module has a gas shower with gas outlets distributed over a surface of the process chamber, and is coupled with an etching steam supply unit, which has a gas dosing system and/or etching steam generating system.    USE - Substrate processing system useful as a flow-through system and/or a system for producing solar cells (all claimed), useful in microelectronics and micromechanics for performing plasma coating process, plasma etching process, plasma oxidation process, surface hydrophilization process, surface hydrophobization process and plasma cleaning processes for variety of applications, and for treating substrate front side of the solar cell substrates.    ADVANTAGE - The substrate processing system enables rapid throughput of highly surface-structured substrates with high quality, increases process variety, and ensures economical and effective production of larger number of solar wafers with high throughput in a short process times.    DETAILED DESCRIPTION - The substrate processing system comprises an evacuatable process chamber (20), in which an etching gas-resistant substrate carrier (30) having a substrate (40) is introduced, a plasma generating module (50), a gas supply (61), a gas discharge (62), a high-frequency steam etching module integrated in the process chamber, and an etching gas-resistant inner lining. The steam etching module has a gas shower with gas outlets distributed over a surface of the process chamber, and is coupled with an etching steam supply unit, which has a gas dosing system and/or etching steam generating system with a tempered space having a liquid etching substance, where a carrier gas stream is guided through the space. The plasma generating module has a flat feedable electrode into the process chamber. The substrate carrier has substrate support, which has a flat supporting area for a peripheral region of the substrate and has an opening inside the supporting area. An inner volume-reducing component is provided in the process chamber. The process chamber has a heating device and/or a cooling device or is coupled with heating device and/or the cooling device. An INDEPENDENT CLAIM is included for a substrate processing method.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of a basic structure of a substrate processing system with a process chamber.    Process chamber (20)    Substrate carrier (30)    Substrate (40)    Plasma generating module (50)    Gas supply (61)    Gas discharge. (62)