NOVELTY - A method for quantum dot growth involves providing a substrate (20); forming a defect region in a pattern along a surface of the substrate; and depositing a first material on the surface of the substrate such that quantum dots (26) are formed in the defect region along the surface of the substrate, where the formation of quantum dots is based at least in part on the pattern, where forming a defect on the substrate comprises forming trench (22) in the substrate.    USE - As quantum dot growth used in e.g. transistors, solar cells, light emitting diodes, diode layers, amplifiers, and biological sensors; as agents for medical imaging; for optical encoding and multiplexing applications due to their broad excitation profiles and narrow/symmetric emission spectra; for high density RAM; and for implementations of qubits for quantum information processing.    ADVANTAGE - The quantum dots has spectra shifted towards the red compared to smaller dots, and exhibits less pronounced quantum properties. The quantum dot has superior transport and optical properties. The quantum dot has far-reaching potential for the study of intracellular processes at the single-molecule level, high-resolution cellular imaging, and long-term in vivo observation of cell trafficking.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) quantum dot device comprising a substrate having a defect region formed in a pattern along a surface of the substrate, and quantum dots positioned predominantly along an edge of the defect region, where the quantum dot positions are based at least in part on the pattern; and    (2) computer accessible medium having stored thereon computer executable instructions for performing a procedure for quantum dot growth the procedure comprising forming a defect region in a pattern along a surface of a substrate; and depositing a first material on the surface of the substrate such that quantum dots are formed in the defect region along the surface of the substrate, where the formation of quantum dots is based at least in part on the pattern.    DESCRIPTION OF DRAWING(S) - The figure shows a top view of a substrate with a linear defect.    Substrate (20)    Trench (22)    Silicon (24)    Quantum dots (26)