NOVELTY - The semiconductor device has nitride semiconductor chip (2) which is placed on and connected to a lead (6). The drain electrode (9) on one side opposite to the side of lead (6) is connected to a copper (Cu) chip (3) which is placed on the semiconductor chip. An aluminum (Al) wire (4) connects Cu chip and lead (7). The gate electrode (10) is located on one side opposite to the side of the lead (6). A gold (Au) wire (5) connects the gate electrode and a lead (8).    USE - Semiconductor device e.g. nitride semiconductor FET for use in electronic and electric equipment including power supplies and switches of battery driven equipment, automobile use electrical equipment, motor drive use control unit. Can also be used in power metal oxide semiconductor (MOS) transistor, insulated gate bipolar transistor (IGBT), power transistor, intelligent power module (IPM), power integrated circuit (IC).    ADVANTAGE - The damage of Cu chip and peeling of drain electrode is prevented by the connection of Al wire to the Cu chip, so that the wire bonding condition setting for Al and aqueous solution wires is facilitated and the reliability of the semiconductor chip, is improved. The manufacturing cost of semiconductor device is reduced as the placement of Cu chip on the semiconductor chip can be implemented by using the mounting equipment. Breakage of electrode pad of semiconductor device is prevented by providing inorganic insulation film, so that the device can be used for application of ultrasonic waves and process control can be increased. Semiconductor chip area is reduced, when pull-out of all of the drain electrodes and the gate electrodes is done towards one side of the semiconductor chip. In nitride semiconductor FET, drain-gate and drain-source capacitances can be reduced, so that high speed operation is enabled by providing resin-made insulation film having film thickness of several micrometers on the metal piece side surface.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor device manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device.    Power transistor (2)    Cu chip (3)    Al wire (4)    Au wire (5)    Leads (6-8)    Drain electrode (9)    Gate electrode (10)