NOVELTY - A semiconductor device manufacturing method involves providing a semiconductor substrate (14); forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22); and then forming an emitter region (30) and gettering impurities (16) by annealing the semiconductor substrate including the layer.    USE - For manufacturing semiconductor device (claimed) e.g. solar cell.    ADVANTAGE - The method provides semiconductor device has improved emitter profile, allows for a better control of the emitter profile, has improved emitter region, has improved surface passivation, has reduced charge carrier recombination and has improved anti-reflective properties; and produces at low cost.    DETAILED DESCRIPTION - A semiconductor device manufacturing method involves providing a semiconductor substrate (14); forming on the semiconductor substrate a layer (20) including a semiconductor compound and a dope additive (22); and then forming an emitter region (30) and gettering impurities (16) by annealing the semiconductor substrate including the layer; where forming the layer is performed by plasma enhanced chemical vapor deposition (PECVD) of a gas mixture including silane (SiH4) and at least one element selected from ammonia, methane, and phosphine (PH3). The semiconductor substrate is a silicon substrate and the semiconductor compound is a silicon compound and the annealing is performed by heating at 600-1200 degrees C for an annealing time of 1-100 minutes. The semiconductor compound includes at least one element selected from silicon compound, silicon carbide and silicon nitride. The dope additive includes at least one element selected from p-type dopant, n-type dopant, phosphorus and arsenic. The semiconductor substrate is one element selected from silicon substrate, a crystalline silicon substrate, a multi-crystalline silicon substrate, a substrate having a crystalline silicon surface layer, a substrate having a multi crystalline silicon surface layer, an n-type semiconductor substrate, a p-type semiconductor substrate, an intrinsic semiconductor substrate, an n-type silicon substrate, a p-type silicon substrate and an intrinsic silicon substrate. The annealing is performed by a heating procedure using at least one element selected from tubular furnace, belt furnace, resistance heated furnace, infrared furnace and halogen lamps. An INDEPENDENT CLAIM is included for semiconductor device manufacturing installation comprising a coating device adapted for coating a semiconductor substrate, a heating device adapted for annealing the coated semiconductor substrate, and a control device adapted for controlling the coating device and the heating device and adapted for performing a method of manufacturing of semiconductor device.    DESCRIPTION OF DRAWING(S) - The figure shows view of steps of semiconductor manufacturing method.    Semiconductor substrate (14)    Impurities (16)    Layer (20)    Dope additive (22)    Emitter region (30)