TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Removing the damage layer on the surface of the crystalline silicon piece comprises placing the damage layer on the surface of the crystalline silicon piece into 30 wt.% of sodium hydroxide solution at 70-90 degrees C to thin for 30-150 seconds; and using the mixing solution of 36.5 wt.% of hydrochloric acid solution, 30 wt.% of hydrogen peroxide solution, and deionized water in volume ratio of 11:6 to perform the acid washing for 5-10 minutes at 70-90 degrees C. Re-diffusing comprises re-diffusing the crystalline silicon piece by the normal tubular diffusing method at 800-1000 degrees C; where the diffusing source is phosphorus oxychloride; accessing the mixing gas of nitrogen and oxygen in the volume ratio of 50:1 for 10-30 minutes; where the diffusing square resistance is 10-40 ohms/square; and soaking into 1-10 wt.% of hydrofluoric acid to perform phosphorus washing for 30-200 seconds after diffusing. Printing the gate line mask comprises printing a layer of mask slurry on the crystalline silicon piece by a normal method for printing the positive gate line electrode silk screen of the crystalline silicon solar cell; where the slurry comprises glass powder and organic carrier in the mass ratio of 4:1; the glass powder comprises 60 wt.% of silicon dioxide, 5 wt.% of zirconium dioxide, 6 wt.% of bismuth trioxide, 0.5 wt.% of aluminum oxide, 5 wt.% of stannic oxide, 3.5 wt.% of calcium oxide, 5 wt.% of chromium sesquioxide, 10 wt.% of titanium dioxide, and lanthanum trioxide; and the organic carrier comprises glycerine and absolute ethyl alcohol in the mass ratio of 1:4; and heating at 100-600 degrees C after printing. Preparing fiber into fine and soft material comprises soaking the crystalline silicon piece into the 0.5-10 wt.% of sodium hydroxide solution at 70-90 degrees C to react for 10-30 minutes. Removing the mask comprises soaking the crystalline silicon piece into the organic solvent comprising dimethylbenzene, acetone or absolute ethyl alcohol, or 2-10 wt.% of hydrofluoric acid solution to dissolve for 5-10 minutes; and using the mixing solution of 36.5 wt.% of hydrochloric acid solution, 30 wt.% of hydrogen peroxide solution, and deionized water in the volume ratio of 1:1:6 to perform the acid washing for 5-10 minutes at 70-90 degrees C. Lightly diffusing comprises lightly diffusing the crystalline silicon piece by the normal tubular diffusing method at 800-1000 degrees C; where the diffusing source is phosphorus oxychloride; and accessing the mixing gas of nitrogen and oxygen in the volume ratio of 50:1; where the diffusing square resistance is 50-100 ohms/square. Burring comprises etching the edge of the crystalline silicon piece by the normal plasmas etching method, and performing the phosphorus washing by 1-10 wt.% of hydrofluoric acid solution for 30-200 seconds after etching. Depositing antireflection coating comprises performing the silicon nitride antireflection coating technology for the positive face of the crystalline silicon piece via a normal plasmas enhanced chemical vapor phase depositing method; where the gas source is silane and ammonia gas in the volume ratio of 1:10; the silicon nitride is 60-80 nm in thickness; and the refractive index is 1.9-2.1.