NOVELTY - The method comprises depositing an absorber layer (415) on a back contact layer (410), changing a grain structure of the absorber layer to optimize the properties of the absorber layer, depositing a window layer (420) on the absorber layer, converting the absorber layer to a p-type semiconductor, passivating the grain boundaries of the absorber layer, annealing the absorber layer in the presence of cadmium chloride at 250-600 degrees C for 1-60 minutes, depositing a front contact layer over the window layer, and encapsulating a photovoltaic stack (400) to form a solar cell module.    USE - The method is useful for forming a solar cell photovoltaic stack.    ADVANTAGE - The method independently controls the fabrication conditions during stack formation thus effectively and easily forming the solar cell photovoltaic stack with improved performance and photovoltaic properties and providing environmental protection and mechanical support to the cell.    DETAILED DESCRIPTION - The method comprises depositing an absorber layer (415) on a back contact layer (410), changing a grain structure of the absorber layer to optimize the properties of the absorber layer, depositing a window layer (420) on the absorber layer, converting the absorber layer to a p-type semiconductor, passivating the grain boundaries of the absorber layer, annealing the absorber layer in the presence of cadmium chloride at 250-600 degrees C for 1-60 minutes, depositing a front contact layer over the window layer, and encapsulating a photovoltaic stack (400) to form a solar cell module. The window layer comprises a grain size of 5-300 Angstrom . The deposition of the windowlayer comprises electrodeposition of solution of cadmium chloride and sulfur in dimethylsulfoxide. The back contact layer is supported by a substrate (405). The substrate and the back contact layer have a planar or a cylindrical geometry.    DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of a solar cell photovoltaic stack.    Photovoltaic stack (400)    Substrate (405)    Back contact layer (410)    Absorber layer (415)    Window layer. (420)