NOVELTY - A cleaning composition (C1) comprises at least one solvent, at least one corrosion inhibitor, at least one amine, and at least one quaternary base. The corrosion inhibitor comprises a species selected from ribosylpurines or their methylated or deoxy derivatives; degradation products of adenosine and adenosine derivatives; purine-saccharide complexes; and/or methylated or deoxy purine derivatives, or their reaction or degradation products.    USE - As cleaning composition for removing residues (e.g. post-CMP (chemical mechanical polishing) residues, post-etch residues and/or post-ash residues) and contaminants from a microelectronic device (claimed) e.g. semiconductor substrates, flat panel displays, phase change memory devices, solar panels and other products including solar substrates, photovoltaics, and microelectromechanical systems (MEMS), manufactured for use in microelectronic, integrated circuit, or computer chip applications; for cleaning and protection of other metal (e.g. copper-containing) products including, decorative metals, metal wire bonding, printed circuit boards and other electronic packaging using metal or metal alloys.    ADVANTAGE - The composition achieves highly efficacious cleaning of the post-chemical mechanical polishing (post-CMP) residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material of the copper interconnect material. The composition is devoid of at least one of oxidizing agents; fluoride-containing sources; abrasive materials; an alcohol having an ether-bond in the molecule; alkylpyrrolidones; surface interaction enhancing agents; alkali and alkaline earth metal bases; sugar alcohols; and/or corrosion inhibiting metal halides; and the cleaning composition does not solidify to form a polymeric solid. The cleaning compositions are easily formulated by simple addition of the respective ingredients and mixing to homogeneous condition; and can be formulated as single-package formulations or multi-part formulations. The cleaning compositions do not damage low-k dielectric materials or corrode metal interconnects on the device surface. The cleaning compositions remove at least 85% (preferably at least 90%, especially at least 95%, particularly at least 99%) of the residue present on the device prior to residue removal. The cleaning composition can be recycled until residue and/or contaminant loading reaches the maximum amount the cleaning composition can accommodate.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a kit comprising, in at least one container, at least one of the following reagents for forming the cleaning composition (C1), where the cleaning composition comprises at least one solvent, at least one corrosion inhibitor, at least one amine, and at least one quaternary base; and    (2) removing residue and contaminants from a microelectronic device involving contacting the microelectronic device with the cleaning composition (C1) for time to at least partially clean the residue and contaminants from the microelectronic device.