TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Product: The product is a doped zinc oxide layer comprising aluminum and/or gallium in a molar concentration of 0.1-30%. The doped zinc oxide layer has a specific crystal orientation and comprises gallium (0.1-15 mol.%) and aluminum (0.1-15 mol.%).    TECHNOLOGY FOCUS - METALLURGY - Preferred Method: Doping and/or alloying comprise providing to the substrate a decomposition product of the metal organic precursor. The decomposition of the metal organic precursor occurs via plasma (102) activation and/or thermal activation. Sputtering comprises a target that includes a metal selected from zinc, aluminum, titanium, tin, indium, hafnium, and/or their oxide. It includes magnetron sputtering and non-magnetron sputtering. The method further comprises providing a reactive gas during the sputtering and the doping and/or alloying. Sputtering a material from a target comprises providing a surface having a portion(s) that includes a target material; flowing a gas comprising an inert gas into a region proximate to the surface; generating plasma in the region proximate to the surface; sputtering the target material from the surface; and depositing the sputtered target material on the substrate. Doping and/or alloying comprise flowing a metal organic precursor into the deposition chamber; decomposing the metal organic precursor to form a doping and/or alloying species; and providing the doping and/or alloying species to the substrate. The metal organic precursor contains a metal selected from group IIA element, transition metal, group III element, and/or group VI element. It contains a metal selected from gallium, aluminum, indium, magnesium, cadmium, and/or iron.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The metal organic precursor is selected from trimethylgallium, triethylgallium, tripropylgallium, triethylaluminum, tripropylaluminum, tributylaluminum, diethylaluminum hydride, dipropylaluminum hydride, dibutylaluminum hydride, trimethylindium, bismethylcyclopentadienyl magnesium, dimethylcadmium, and/or bicyclopentadienyl iron.