NOVELTY - The method comprises forming a semiconductor epilayer (8402) on a receiving surface of a growth substrate (8401) via epitaxial growth, bonding the first contact surface of the semiconductor epilayer to a handle substrate (8403), releasing the semiconductor epilayer from the growth substrate, patterning the second contact surface of the semiconductor epilayer with a mask (8404) thus generating exposed regions and masked regions of the second contact surface, and removing material from the exposed regions by anisotropic etching of the exposed regions.    USE - The method is useful for making a printable electronic device on a device substrate, where the electronic device is a P-N junction, a thin film transistor, a single junction solar cell, a multi-junction solar cell, a photodiode, a LED, a laser, a sensor, a complementary metal oxide semiconductor device, a metal oxide semiconductor FET device, a metal semiconductor FET device, a photovoltaic cell, a microelectromechanical device and/or a high electron mobility transistor device (all claimed).    ADVANTAGE - The method is capable of easily and economically making an electronic device with high performance, improved life time and less number of process steps.    DETAILED DESCRIPTION - The method comprises forming a semiconductor epilayer (8402) on a receiving surface of a growth substrate (8401) via epitaxial growth, bonding the first contact surface of the semiconductor epilayer to a handle substrate (8403), releasing the semiconductor epilayer from the growth substrate, patterning the second contact surface of the semiconductor epilayer with a mask (8404) thus generating exposed regions and masked regions of the second contact surface, removing material from the exposed regions by anisotropic etching of the exposed regions thus generating semiconductor structures supported by the handle substrate, partially releasing the semiconductor structures from the handle substrate, and transferring one of the semiconductor structures from the handle substrate to a device substrate via dry transfer contact printing thus assembling the semiconductor structures on the device substrate to make the electronic device. The semiconductor epilayer has a first contact surface, and remains bonded to the handle substrate thus exposing a second contact surface of the semiconductor epilayer. The step of processing a semiconductor epilayer on the handle substrate is carried out by a processing method including a patterning process, a growth process, a polishing process, a deposition process, an implantation process, an etching process, an annealing process, a molding process, a curing process and/or a coating process, and comprises forming ohmic contacts on the semiconductor epilayer and forming thermal management structures on the semiconductor epilayer. The growth substrate and the semiconductor epilayer are lattice matched to within plus minus 3.4%. The semiconductor epilayer has a thickness of 1-5 mu m, and semiconductor epilayer is a multilayer comprising a p-type semiconductor layer in electrical contact with n-type semiconductor layer.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a method of making semiconductor devices.    Growth substrate (8401)    Epilayer (8402)    Handle substrate (8403)    Mask (8404)    Array of semiconductor device. (8405)