NOVELTY - The examination apparatus has energy source device (10) to supply semiconductor substrate (100) with excitation energy (Er) to cause luminescence in substrate. An image capturing device (30) is configured to capture luminescence images of substrate. A luminescence image processing device (41) calculates difference in luminescence intensity between luminescence images and generates intensity difference image data. A detecting device (42) is configured to detect position of crack in substrate on basis of determination values based on magnitude of difference of intensity difference image data.    USE - Semiconductor examination apparatus used in testing semiconductor. Can be used to detect a crack in a semiconductor substrate e.g. solar cell substrate.    ADVANTAGE - Provides an inexpensive semiconductor examination apparatus and semiconductor examination method that can detect a crack in a semiconductor substrate with high precision using a luminescence image of the semiconductor substrate. Ensures that the semiconductor examination apparatus can quantify the volume of the crack by using the number of pixels having a crack, thus the quantified volume of the crack may be used to classify the quality of the semiconductor substrate into multiple levels. Ensures that the semiconductor examination apparatus can easily detect the position and length of a crack even when the crack occurs close to an electrode wire on a semiconductor substrate, such as a solar cell substrate, having the electrode wire on its surface.    DETAILED DESCRIPTION - The semiconductor substrate has a positive-negative (pn) junction. The image capturing device is configured to capture a first luminescence image of the semiconductor substrate when the semiconductor substrate is supplied with first excitation energy, and to capture a second luminescence image of the semiconductor substrate when the semiconductor substrate is supplied with second excitation energy that is different in magnitude from the first excitation energy. The luminescence image processing device calculates a difference in luminescence intensity between the first luminescence image and second luminescence image at corresponding positions on the semiconductor substrate. INDEPENDENT CLAIMS are also included for the following:    (1) a semiconductor examination method; and    (2) a semiconductor examination system.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic diagram illustrating a configuration of the semiconductor examination apparatus.    Energy source device (10)    Image capturing device (30)    Image data processing unit (40)    Luminescence image processing device (41)    Detecting device (42)    Semiconductor substrate (100)    Excitation energy (Er)