TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: The semiconductor device further comprises: a seed film on the substrate, where the Cu plating film is formed by growth from the seed film. The substrate is a metal substrate or a substrate provided with a metal film, where the metal substrate is a Cu substrate, and the substrate provided with the metal film is a glass substrate provided with a Cu film. Preferred Solar Cell: The solar cell further comprises: a seed film on the substrate, where the Cu plating film is formed by growth from the seed film. The transparent conductive material is formed of any one of indium tin oxide alloy, zinc oxide, tin oxide or indium zinc oxide alloy. Preferred Method: In manufacturing the semiconductor device, the thermocompression bonding is performed at 150-300 degrees C with 0.5-20 MPa. The method further comprises: forming a seed film on the barrier film, where the Cu plating film is formed by growth from the seed film. The metal substrate is a Cu substrate. Alternatively, manufacturing the semiconductor device comprises: forming an embrittled layer in a single crystal silicon substrate by doping a surface of the single crystal silicon substrate with ions which are generated from a hydrogen gas; forming a barrier film on the single crystal silicon substrate; forming the Cu plating on the barrier film; preparing a substrate provided with a metal film; bonding the single crystal silicon substrate and the substrate provided with the metal film to each other with the Cu plating film and the metal film interposed between it by thermocompression bonding of the Cu plating film and the metal film; forming a single crystal silicon film over the substrate provided with the metal film with the Cu plating film and the metal film interposed between it by separating part of the single crystal silicon substrate along the embrittled layer through heat treatment; and forming an electrode layer over the single crystal silicon film. The method further comprises: forming a seed film on the barrier film, where the Cu plating film is formed by growth from the seed film. The substrate provided with the metal film is a glass substrate provided with a Cu film.