TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The process further comprises: a drying step at 80-350 degrees C; a step of heating the ink to a temperature of greater than 100 degrees C prior to disposing it onto the substrate; an annealing step at 350-800 degrees C, which comprises thermal processing, rapid thermal processing, rapid thermal annealing, pulsed thermal processing, laser beam exposure, heating via IR lamps, electron beam exposure, pulsed electron beam processing and/or heating via microwave irradiation. The process is carried out at atmospheric pressure, a solvent is present, where the boiling point of the solvent is greater than 100 degrees C at atmospheric pressure; and disposing at least one layer, which is buffer layer, top contact layer, electrode pad or antireflective layer onto the annealed CZTS-selenium film. The annealing is carried out under an atmosphere comprising an inert gas and a reactive component comprising selenium vapor, sulfur vapor, hydrogen, hydrogen sulfide and/or hydrogen selenide. Preferred Components: The ratio of total number of moles of the chalcogen compound, the sulfur- and selenium-based organic ligands and the copper-, tin- and zinc-sulfides and selenides to the total number of moles of the copper, tin and zinc complexes is at least 1. The ink comprises a chalcogen compound or a zinc source. The ink comprises elemental sulfur and/or elemental selenium and the molar ratio of (sulfur+selenium) is 0.2-5 relative to the tin source. The coated substrate comprises: (a1) at least one copper compounds including binary copper chalcogenides, binary copper oxides or CTS-selenium; and (b1) at least one tin compounds including binary tin chalcogenides, binary tin oxides or CTS-selenium, where the chalcogenides comprise sulfides and/or selenides. The ink comprises a zinc source and the coated substrate further comprises at least one zinc compounds including binary zinc chalcogenides, zinc oxide or CZTS-selenium, where the chalcogenides comprise sulfides and/or selenides. The nitrogen-, oxygen-, carbon-, sulfur- or selenium-based organic ligands comprising amidos, alkoxides, acetylacetonates, carboxylates, hydrocarbyls; oxygen-, nitrogen-, sulfur-, halo- or tri(hydrocarbyl)silyl-substituted hydrocarbyls; thio- or selenolates; thio-, seleno-, or dithiocarboxylates; dithio-, diseleno-, or thioselenocarbamates; or dithioxanthogenates. The solvent is aromatics, heteroaromatics, nitriles, amides, alcohols, pyrrolidinones and/or amines. The coated substrate comprises CZTS-selenium. The substrate comprises material comprising metal foils, plastics, polymers, metalized plastics, glass, solar glass, low-iron glass, green glass, soda-lime glass, steel, stainless steel, aluminum, ceramics, metal plates, metalized ceramic plates or metalized polymer plates. EXAMPLE - Zinc diethyldithiocarbamate (0.5919 g), copper(II)dimethyldithiocarbamate (0.9930 g), and di-n-butyltinsulfide (0.4506 g) were placed in a 40 ml amber vial equipped with a stir bar. 4-tert-Butylpyridine (4.4144 g) was added, and the resulting mixture was stirred well. Elemental sulfur (0.0520 g) was added and the reaction mixture was stirred for 12 hours and then ~40 hours at first heating temperature of 105 degrees C. The reaction mixture was stirred for 8 hours at a second heating temperature of 190 degrees C. While maintained at 105 degrees C with stirring, a small portion of the formulation was drawn into a pipette and then spread uniformly onto the substrate (SLG slide) via drop-coating, which was also heated to 105 degrees C. The coating on the substrate was then dried in the dry box by raising the temperature of the hotplate from 105-170 degrees C for 0.5 hours. The dried sample was annealed under a nitrogen/sulfur atmosphere at 550 degrees C for 1 hours to give copper zinc tin sulfide film.