NOVELTY - An aqueous solution of metal salt is dripped into aqueous alkali solution, and oxide precursor is dispersed into aqueous alkali solution while stirring, to obtain oxide precursor solution (1). Then, pH of oxide precursor solution is controlled (3) by adding polar solvent. Further, oxide precursor solution and noble metal colloid are dispersed uniformly, to obtain oxide precursor-noble metal colloid dispersion liquid (5). The obtained dispersion liquid is washed (7) using polar solvent and subjected to freeze-drying process (11), to obtain metal-oxide semiconductor material.    USE - Manufacture of metal-oxide semiconductor material used for gas sensor.    ADVANTAGE - The method efficiently and easily provides metal-oxide semiconductor material with high sensor sensitivity and reduced variation in electrical property.    DETAILED DESCRIPTION - An aqueous solution of metal salt is dripped into an aqueous alkali solution and oxide precursor is dispersed into the aqueous alkali solution while stirring, to obtain oxide precursor solution. Then, pH of the oxide precursor solution is controlled by adding polar solvent, and pH of the oxide precursor solution is reduced. Further, the oxide precursor solution and noble metal colloid are dispersed uniformly, to obtain oxide precursor-noble metal colloid dispersion liquid. The obtained oxide precursor-noble metal colloid dispersion liquid is washed using polar solvent, the impurity in the oxide precursor-noble metal colloid dispersion liquid is removed, and the purified oxide precursor-noble metal colloid dispersion liquid is subjected to freeze-drying process, to obtain metal-oxide semiconductor material.    DESCRIPTION OF DRAWING(S) - The drawing shows flowchart of manufacture of metal-oxide semiconductor material. (Drawing includes non-English language text)    Synthesis of precursor solution (1)    Controlling of pH (3)    Preparation of precursor-colloid dispersion (5)    Washing process (7)    Substitution process (9)    Freeze-drying process (11)