NOVELTY - The method comprises anodizing an aluminum substrate (10) to form anodized aluminum including an aluminum oxide layer having pores on a surface of the aluminum substrate, preparing an electrodeposition composition including a source of cobalt ions and a source of selenite ions, contacting the anodized aluminum with the electrodeposition composition, and applying alternative current to the anodized aluminum for a duration of 30-60 minutes to electrodeposit cobalt selenide into the pores to form a film having an array of oriented cobalt selenide nanowires.    USE - The method is useful for making an anodic film, which is useful: for infrared detection and imaging equipment; for magnetic recording; in solar cells and batteries; and as catalyst in organic synthesis.    ADVANTAGE - The method is capable of easily making the anodic film with enhanced unique conductive, mechanical and optical properties and less processing steps.    DETAILED DESCRIPTION - The method comprises anodizing an aluminum substrate (10) to form anodized aluminum including an aluminum oxide layer having pores on a surface of the aluminum substrate, preparing an electrodeposition composition including a source of cobalt ions and a source of selenite ions, contacting the anodized aluminum with the electrodeposition composition, and applying alternative current to the anodized aluminum for a duration of 30-60 minutes to electrodeposit cobalt selenide into the pores to form a film having an array of oriented cobalt selenide nanowires. The pores have a diameter of less than 50 nm, and a depth of less than 300 microns. The preparation of the electrodeposition composition includes adjusting the quantities of a source of cobalt ions, a source of selenite ions and pH of the electrodeposition composition to achieve the nanowires having a desired ratio of selenium to cobalt. The cobalt selenide nanowires include an atomic ratio of selenium to cobalt of 0.85-2.05, a length of 300 microns, and a diameter of 50 nm. The application of the alternative current is performed at a constant current density of 0.3-0.5 A/sq. dm and at a constant voltage of 20-30 volts. The method further comprises removing the oxide layer such that the cobalt selenide nanowires are disengaged from the anodized aluminum. The nanowires are perpendicular to the plane of the aluminum substrate. An INDEPENDENT CLAIM is included for a film having an array of cobalt selenide nanowires.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method to produce a film having an array of cobalt selenide nanowires.    Aluminum substrate. (10)