NOVELTY - The process comprises applying a moist material forming the contacts in a desired strip-like and/or point-like arrangement on an exterior surface of the semiconductor component, drying (12) the moist material by heating the semiconductor component to a temperature T1 with 350 degrees C less than or equal to T1 less than or equal to 480 degrees C over time t1 with 1 second less than or equal to T1 less than or equal to 600 seconds and keeping the semiconductor element at temperature T1 over a time t1, and sintering (18) the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2.    USE - The process is useful for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component such as a solar cell.    ADVANTAGE - The process is capable of effectively and economically producing the strip-shaped and/or point-shaped electrically conducting contacts with high current dissipation and corrosion resistance to acidic media thus increasing the efficiency of the solar cell.    DETAILED DESCRIPTION - The process comprises applying a moist material forming the contacts in a desired strip-like and/or point-like arrangement on an exterior surface of the semiconductor component, drying (12) the moist material by heating the semiconductor component to a temperature T1 with 350 degrees C less than or equal to T1 less than or equal to 480 degrees C over time t1 with 1 second less than or equal to T1 less than or equal to 600 seconds and keeping the semiconductor element at temperature T1 over a time t1, sintering (18) the dried material by heating the semiconductor component to a temperature T2 and keeping the semiconductor component at temperature T2 over a time t2, cooling (20) the semiconductor component to a temperature T3 that is equal or roughly equal to room temperature and keeping the semiconductor component at temperature T3 over a time T3, cooling the semiconductor component to a temperature T4, which is less than or equal to -35 degrees C and keeping the semiconductor component at temperature T4 over a time T4, and heating the semiconductor component to room temperature. After the application of the moist material at room temperature, the semiconductor component is kept over a time ta with 1 second less than or equal to ta600 seconds at room temperature. After the application of the moist material on the semiconductor component, a base medium or a medium containing basic components is applied with a surfactant medium, which is used as the base medium, with water, which is used as a surfactant medium, anionic surfactants such as soap, fatty alcohol sulfates, alkyl benzolsulfonates and/or cationic surfactants such as invert soap, amphoteric surfactants and/or non-ionic surfactants like non-carboxylic acid esters of polyalcohols, or with the surfactant medium, which is applied in the form of a liquid or a foam in the area of the applied moist material onto the semiconductor component. The moist material is exposed to an oxidizing atmosphere A1 with a mixture of air, solvent and/or vapor and/or reaction products. The semiconductor component is heated in an oxidizing atmosphere A2 with a mixture of air and binders, resins and/or solvents or air with an enhanced oxygen content ( greater than or equal to 21 vol.%). The dried material is sintered at temperature T2 with 720 degrees C less than or equal to T2 less than or equal to 920 degrees C. The semiconductor component is kept at temperature T2 during the time t2 with 1 second less than or equal to t2 less than or equal to 120 seconds, where the sintering is done in air or in air with an enhanced oxygen content ( greater than or equal to 21 vol.%), and is kept at the temperature T3 over a time t3 with 1 second less than or equal to t3 less than or equal to 24 hours in air with normal humidity or in air with reduced humidity (less than 20 vol.%). The semiconductor component is cooled and kept at the temperature T4 in an inert atmosphere or in dry air with nitrogen or argon or a mixture of carbon dioxide. During cooling to the temperature T4, the semiconductor component is subjected to an environment in which dry ice or alcohol such as methanol or ethanol is found. The semiconductor component is heated to a temperature T7 with 120 degrees C for connecting the contacts with electrically conducting strip-shaped connectors. The semiconductor component is interconnected with additional semiconductor components via connectors and then encapsulated with additional semiconductor components. During the encapsulation, alkaline components are added to the contacts, where the alkaline components include alkaline salts or alkaline earth carbonate. The electrically conducting contacts are in contact with polymers containing alkaline components for addition of the alkaline components. The contacts include an outermost layer of the sintered contact configured to have open pores, where a pore volume is 25 vol.%. The alkaline components are galvanically injected into the open pores, and then segments of the contacts are covered with a metallic layer. The moist material is applied to the surface of the semiconductor component in a pasty consistency or as a paste by compressing, dispensing, ink jet application or through a wet-chemical separation process. The semiconductor components have a material constant of K (J/cm2 degrees C) with 0.02 less than or equal to K less than or equal to 0.06, where K=Ax dx rho x Cpx B, A is surface of the semiconductor component in cm2, d is thickness of the semiconductor component in cm, rho is density of the semiconductor component in g per cm3, Cp is thermal capacity of the semiconductor component (J/gK) and B is reference size to (1/cm2) of the particular semiconductor component to be treated and to attain a thermal content P with P=K Delta T Delta t, where Delta T is the temperature difference to 0 degrees C. The interconnected semiconductor components have a material constant of Kasterisk(J/cm2 degrees C) with 0.9 less than or equal to Kasterisk less than or equal to 1.6, where Kasterisk=Aasteriskx dasteriskx rho asteriskx Cpasteriskx Basterisk, Aasterisk is surface of the interconnected semiconductor component in cm2, dasterisk is thickness of the interconnected semiconductor component in cm, rho asterisk is density of the interconnected semiconductor component in g per cm3, Cpasterisk is thermal capacity of the interconnected semiconductor component (J/gK) and Basterisk is reference size to (1/cm2) of the interconnected semiconductor component such as a solar module. The semiconductor component experiences a thermal content P with 117000 Js/cm2 less than or equal to P less than or equal to 460800 Js/cm2. An INDEPENDENT CLAIM is included for a process for producing a composite of semiconductor components.    DESCRIPTION OF DRAWING(S) - The diagram shows a graphical view of a process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component.    Foam applying area (10)    Drying the moist material (12)    Sintering the dried material (18)    Cooling the semiconductor component (20)    Joining the semiconductor components with each other. (28)