NOVELTY - A semiconductor substrate comprising laminated structure of P-type doping layer and N-type doping layer is provided (201) with an antireflection layer, and a primary metal layer is formed (203) on the antireflection layer. A pattern is projected (204) on the primary metal layer, and the primary metal layer is removed (206) using a suitable solution. An electrode (A) is formed (208) in connection with the metal silicide and exposed on antireflection layer, and an electrode (B) is formed (209) on the substrate. Thus, the manufacturing method of electrode is carried out.    USE - Manufacture of electrode used for structure of solar cell panel (claimed).    ADVANTAGE - The electrode having desired pattern is manufactured efficiently.    DETAILED DESCRIPTION - A semiconductor substrate comprising laminated structure of P-type doping layer and N-type doping layer is provided with an antireflection layer, and a primary metal layer is formed on the antireflection layer. A pattern is projected on the primary metal layer by laser beam in order to perform an alloy treatment through the primary metal layer and antireflection layer to form a metal silicide on the semiconductor substrate with pattern. The primary metal layer is removed using a suitable solution, an electrode (A) is formed in connection with the metal silicide and exposed on the surface of antireflection layer, and an electrode (B) is formed on the surface of semiconductor substrate opposite to the antireflection layer. Thus, the manufacturing method of electrode of solar cell panel is carried out. INDEPENDENT CLAIMS are included for the following:    (1) method for forming metal silicide by displaying electrode pattern via laser beam; and    (2) structure of solar cell panel.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of manufacturing method of electrode.    Providing semiconductor substrate (201)    Providing antireflection layer on substrate (202)    Forming primary metal layer (203)    Display pattern on substrate (204)    Removing primary metal layer (206)    Forming electrode-A (208)    Forming electrode-B (209)