NOVELTY - The photovoltaic device or opto-electronic device comprises a support structure (150), photovoltaic cells (110j) including a first core and a second core formed of a first semiconductor material and a second semiconductor material including a p-n junction (106) defined by respective n-type and p-type regions respectively, a transparent cladding (104) present in coaxial relationship with the semiconductor core and forming a longitudinally oriented cane, and a first electrode (105A) and a second electrode (105B) each electrically coupled to the n-type and/or p-type regions.    USE - The photovoltaic device or opto-electronic device is useful for converting solar energy into electricity.    ADVANTAGE - The photovoltaic device exhibits desirable light directing characteristics and high photo-cell efficiency, enhances the absorption of solar energy and electrical power generation, improves the collection of light energy within the cladding and towards the core, and can be economically and effectively manufactured with good energy conversion efficiency and without the need for expensive controlled atmosphere and equipment.    DETAILED DESCRIPTION - The photovoltaic device or opto-electronic device comprises a support structure (150), photovoltaic cells (110j) including a first core and a second core formed of a first semiconductor material and a second semiconductor material including a p-n junction (106) defined by respective n-type and p-type regions respectively, a transparent cladding (104) present in coaxial relationship with the semiconductor core and forming a longitudinally oriented cane, a first electrode (105A) and a second electrode (105B) each electrically coupled to the n-type and/or p-type regions, a first channel extending longitudinally along the cladding such that the first channel is adjacent to and present in communication with the n-type region of the core, a second channel extending longitudinally along the cladding such that the second channel is adjacent to and present in communication with the p-type region of the core, and a first conductive material and a second conductive material disposed within the first and second channels and forming the first and/or second electrodes respectively. The transparent cladding operates to focus solar rays toward the p-n junction. The channel and the first and/or second electrodes are located, sized and shaped such that voltage and current generated by the p-n junction is accessible outside the cladding. The photovoltaic device further comprises a longitudinally oriented surface on which respective portions of the n-type region and the p-type regions of the core are exposed, a first conductive layer and a second conductive layer of material disposed on the surface, electrically coupled with the n-type region and p-type region and forming the first electrode and second electrode respectively, a slot extending longitudinally along the cladding and extending from an outer surface of the cladding radially toward the core such that the slot communicates with the n-type and/or p-type regions of the core, a first conductor and a second conductor disposed coaxially within the core and serving as a first electrode and a second electrode coupled to the n-type and/or p-type region respectively, first and second tubes each surrounding a respective the first and/or second conductors, a transparent cane having a length and circular cross-section, an n-type semiconductor plate disposed within the channel, a p-type semiconductor plate disposed within the channel and present in electrical communication with the n-type semiconductor plate defining p-n junction, and a plug formed of the same material as the transparent cane filling a remainder of the channel. The transparent cladding and transparent cane are formed of glass, glass-ceramic or polymer coaxially oriented about the cores. The first and second semiconductor cores are formed of different semiconductor types. The first and/or second conductive materials are a wire, which is maintained within the channel via a conductive epoxy. The longitudinally oriented surface defines a flat region surface characterizing the core and cladding in semi-circular cross-section. A surface area of the semi-circular cross-section is greater than 50% of a full circular cross section of surface area. The core is formed from n-type and/or p-type semiconductor material. A cylindrically-shaped portion at an outer most periphery of the core is formed from the other of the n-type and p-type semiconductor material. The cylindrically-shaped portion surrounds the first and second tubes. The first and second tubes include respective longitudinally extending slots that extend through respective walls of the tubes such that the first and second conductors are present in electrical communication with the respective n-type and p-type regions of the core. The channel has a V-shaped cross-section, and a rectangular cross-section. The n-type and p-type semiconductor plates are disposed against opposite surfaces of the channel and in an overlapping orientation, and have respective peripheral edges contact each other to form the p-n junction, and respective major surfaces contact each other to form the at least one p-n junction. An INDEPENDENT CLAIM is included for a method for producing a photovoltaic device or opto-electronic device.    DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of a photovoltaic device/module.    Transparent cladding (104)    First electrode (105A)    Second electrode (105B)    P-n junction (106)    Photovoltaic cells (110j)    Support structure. (150)