NOVELTY - Making a photovoltaic cell comprises: providing a superstrate having a front side and a back side; depositing a transparent conductive oxide layer onto the back side of the superstrate; depositing a silicon layer on the transparent conductive oxide layer; depositing a metal layer on the silicon layer; and removing at least a portion of the peaks extending through the metal layer.    USE - The method is useful for making a photovoltaic cell (claimed).    ADVANTAGE - The photovoltaic cell produces has substantially minimized dead zone.    DETAILED DESCRIPTION - Making a photovoltaic cell comprises: providing a superstrate having a front side and a back side, the back side having spaced ramps, the spaced ramps including ramped surfaces and vertical faces which are substantially perpendicular to the back side of the superstrate; depositing a transparent conductive oxide layer onto the back side of the superstrate so that substantially none of the transparent conductive oxide coats the vertical faces of the spaced ramps; depositing a silicon layer on the transparent conductive oxide layer so that the silicon layer deposited on the vertical faces of the spaced ramps does not contact the transparent conductive oxide layer on top on the ramped surfaces of the spaced ramps; depositing a metal layer on the silicon layer, resulting in peaks extending from the ramped surfaces through the metal layer; and removing at least a portion of the peaks extending through the metal layer to achieve a substantially flat surface extending across the superstrate, to produce a photovoltaic cell. An INDEPENDENT CLAIM is a photovoltaic cell comprising: a superstrate having a front side and a back side, the back side having a plurality of spaced ramps including ramped surfaces and vertical faces which are substantially perpendicular to the back side of the superstrate; a layer of a transparent conductive oxide on the back side of the superstrate; a layer of amorphous silicon overlying the transparent conductive oxide layer; and a layer of metal overlying the silicon layer, the metal layer having a front side facing the silicon layer and a back side.