NOVELTY - Producing copper-indium-gallium-selenium target comprises adding copper powder, indium powder, gallium powder or its alloy powder, selenium powder and an organic solvent into a container, heating, processing synthetic reaction to obtain copper-indium-gallium-selenium compound; grinding via wet ball mill method, and instantly drying into powder whose grain diameter is 5 mu m; and pressing into a blank, pressing the blank so as to tighten the blank, forming a primary base, sintering, removing and sticking with a conductive back plate.    USE - Producing method of copper-indium-gallium-selenium target.    ADVANTAGE - When producing a copper-indium-gallium-selenium film via the copper-indium-gallium-selenium target, a selenylation process can be saved so as to ensure the safety during the production process. The method shortens production time, reduces energy consumption, increases utilization rate of the material, and improves uniformity and crystalline phase of the film. Conversion efficiency of solar cell is improved.    DETAILED DESCRIPTION - Producing copper-indium-gallium-selenium target comprises:    (A) adding copper powder, indium powder, gallium powder or its alloy powder, selenium powder and an organic solvent into a container, heating the container till a reaction temperature so as to uniformly mix the powders, processing synthetic reaction to obtain the copper-indium-gallium-selenium compound;    (B) putting the copper-indium-gallium-selenium compound into a container having mill balls, adding at least one additive, grinding to produce copper-indium-gallium-selenium pulp via wet ball mill method, putting into a spraying drier, instantly drying into copper-indium-gallium-selenium powder whose grain diameter is 5 mu m; and    (C) pressing the copper-indium-gallium-selenium powder into a blank via a shaping machine, pressing the blank so as to tighten the blank, putting the tightened blank into a vacuum furnace, removing partial additive, forming a primary base before sintering, putting the primary base into a high temperature furnace, sintering under vacuum environment or adding at least one of inert gas or reducing gas, forming a sintered base, removing the protrusions on the surface of the sintered base, sticking with a conductive back plate so as to obtain the copper-indium-gallium-selenium target.    DESCRIPTION OF DRAWING(S) - The drawing is a flow diagram illustrating the method of producing copper-indium-gallium-selenium target (Drawing includes non-English language text).