NOVELTY - A method for forming a metal-containing film by atomic layer deposition, involves using at least one metal fluorinated beta -diketonate precursor; and a co-reagent comprising at least one optionally-substituted hydrazine.    USE - For forming a metal-containing film by atomic layer deposition used for a memory or logic application; for a DRAM or CMOS application; for providing solar control on a glass substrate (claimed); and in variety of important applications such as glazing applications, nanotechnology and fabrication of semiconductor devices. Examples of applications include high-refractive index optical coatings, corrosion-protection coatings, photocatalytic self-cleaning glass coatings, biocompatible coatings, dielectric capacitor layers and gate dielectric insulating films in FETs (Field-Effect Transistor), capacitor electrodes, gate electrodes, adhesive diffusion barriers and integrated circuits.    ADVANTAGE - The film has a resistivity of less than about 15 (preferably less than about 5, especially less than about 4.2) mu Omega /cm. The film has a thickness of about 12 nm and has a sheet resistance of less than about 20 (preferably less than about 5, especially less than about 3.9) Omega /square. The method has good compositional control; provides high film uniformity; has good control of doping; and gives excellent conformal step coverage on highly non-planar microelectronic device geometries. The method uses a metal-containing precursor and a hydrazine to allow a true ALD process to be performed. The method avoids the limitation of other deposition techniques and allows for very thin films to be formed with enhanced continuity. One improvement of the method over CVD is that lower temperatures can be employed, thus allowing the formation of thinner, highly pure films with enhanced continuity. The use of hydrazine allows production of highly pure film with no nitrogen inclusion. The deposition of metals by ALD at low temperatures also opens up applications for deposition onto plastics. The methods allow the growth of very thin films. The thin film formed has a maximum thickness of 50 nm (preferably less than 20 nm, especially less than 10 nm). The method allows formation of highly pure films i.e. film containing about less than or equal to 0.1% contamination. The films are phase pure with minimal grain boundaries to maximize conductivity. The metal-containing film formed has a resistivity of less than about 15 (preferably less than 5, especially less than 4.2) mu Omega /cm.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for providing solar control on a glass substrate, involving forming a metal-containing film by an ALD process directly or indirectly on the glass substrate, where the ALD process uses at least one metal fluorinated beta -diketonate precursor and at least one optionally-substituted hydrazine.