NOVELTY - The method starts with preparing a zinc oxide thin film N-type window layer material. A stannous sulfide thin film for a P-type absorbing layer material is prepared. An aluminum electrode is then prepared.    USE - Stannous sulfide thin film solar cell preparation method for photovoltaic solar cell.    ADVANTAGE - Suitable for producing photovoltaic solar cell.    DETAILED DESCRIPTION - Preparing the zinc oxide thin film N-type window layer material entails preparing a layer of intrinsic zinc oxide thin film on a common glass substrate using a magnetron sputter plating method. The zinc oxide thin film is deposited on an indium tin oxide (ITO) substrate to use the zinc oxide thin film as a window layer of the solar cell. A depositing time of 40 minutes, a working air pressure of 0.2 Pa, and power of 150 W are used to prepare a zinc oxide thin film having good quality, a full width at half maximum that is relatively low, and a surface that is very smooth and tidy such that the zinc oxide thin film is suitable for forming an N-layer zinc oxide thin film in a zinc oxide/stannous sulfide heterojunction. Preparing the stannous sulfide thin film for a P-type absorbing layer material entails preparing the stannous sulfide thin film on a zinc oxide substrate with a vacuum vapor deposition method, with the temperature of the substrate at 400 degrees Kelvin, the vacuum degree at 4.0x 1 divide by 10000 Pa, the distance of the substrate from a vaporizing source at 10 cm, and the temperature of the vaporizing source at 1000 degrees centigrade. A crystal oscillator circuit is used to monitor the growth of the thin film in real time to obtain an optical thickness of the stannous sulfide thin film, which is 150 nm. The vacuum vapor deposition method is used to prepare the aluminum electrode. A tungsten rod is used to braze and coat. An aluminum wire is bent and hung on the tungsten rod, which has been processed by an acid-base. The voltage on the tungsten rod is increased. The aluminum wire melts and is naturally absorbed by the tungsten rod due to the affine effect of the aluminum and tungsten, and the temperature is increased. The depositing speed rate of the aluminum electrode is kept at about 2 to 3 nm per second when brazing and coating to obtain an aluminum electrode having high quality and a thickness of 100 nm.