NOVELTY - A photoelectric conversion device (200) comprises substrate (11); a first photoelectric conversion layer (10) placed over the substrate, a second photoelectric conversion layer (20) placed over the first photoelectric conversion layer, each of the photoelectric conversion layers constituted of p-type semiconductor layer (12) containing silicon atoms, i-type semiconductor layer (13) containing silicon atoms and n-type semiconductor layer (14); and an open-circuit voltage of the photoelectric conversion device being over 1.4 V.    USE - As a photoelectric conversion device (claimed) in solar cell for converting light energy into electrical energy.    ADVANTAGE - The photoelectric conversion device provides high photoelectric conversion efficiency while significantly reducing input energy, and thereby suppresses volume of carbon dioxide emissions during manufacturing.    DETAILED DESCRIPTION - A photoelectric conversion device (200) comprises a substrate (11); a first photoelectric conversion layer (10) placed over the substrate, a second photoelectric conversion layer (20) placed over the first photoelectric conversion layer, each of the photoelectric conversion layers constituted of p-type semiconductor layer (12) containing silicon atoms, i-type semiconductor layer (13) containing silicon atoms and n-type semiconductor layer (14) in this order from the substrate side, at least one of the photoelectric conversion layers including p-type semiconductor layer containing nitrogen atoms at concentration of 0.001-10 atomic.%; and an open-circuit voltage of the photoelectric conversion device being over 1.4 V.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view showing a superstrate laminated type photoelectric conversion device.    First photoelectric conversion layer (10)    Substrate (11)    p-Type semiconductor layer (12)    i-Type semiconductor layer (13)    n-Type semiconductor layer (14)    Second photoelectric conversion layer (20)    Photoelectric conversion device (200)