NOVELTY - The method of manufacturing a solar cell, comprises disposing a dielectric layer (130) including aluminum oxynitride on one side of a semiconductor substrate (110) including a p-type layer and an n-type layer, disposing a first electrode that is in electrical communication with the p-type layer of the semiconductor substrate, and disposing a second electrode that is in electrical communication with the n-type layer of the semiconductor substrate. The p-type layer is disposed on the n-type layer. The formation of the dielectric layer comprises repeatedly forming an aluminum nitride layer.    USE - The method is useful for manufacturing a solar cell, which is useful as a next-generation energy source.    ADVANTAGE - The method is capable of economically and efficiently manufacturing a solar cell with improved energy conversion efficiency and increased open voltage by decreasing the loss of produced electric charges, and protects the semiconductor substrate and the dielectric layer from defects and facilitates an improvement in the interface characteristics between the substrate and the dielectric layer.    DETAILED DESCRIPTION - The method of manufacturing a solar cell, comprises disposing a dielectric layer (130) including aluminum oxynitride on one side of a semiconductor substrate (110) including a p-type layer and an n-type layer, disposing a first electrode that is in electrical communication with the p-type layer of the semiconductor substrate, and disposing a second electrode that is in electrical communication with the n-type layer of the semiconductor substrate. The p-type layer is disposed on the n-type layer. The formation of the dielectric layer comprises repeatedly forming an aluminum nitride layer and substituting a part of nitrogen of the aluminum nitride layer with oxygen. The formation of the aluminum nitride layer comprises supplying an aluminum precursor and a nitrogen-containing gas to a surface of the semiconductor substrate. The aluminum precursor comprises a compound containing aluminum combined with 1-30C alkyl group, 6-30C cycloalkyl group, 6-30C aromatic group, amide group, alkoxy group (all optionally substituted) and/or hydrogen. The forming of the dielectric layer is performed by chemical vapor deposition, which is performed at a temperature of 250-350 degrees C. A purging process is performed between the steps of forming the aluminum nitride layer and substituting a part of the nitrogen of the aluminum nitride layer with oxygen. The step of substituting a part of the nitrogen of the aluminum nitride layer comprises supplying activated oxygen to the aluminum nitride layer. The aluminum oxynitride comprises a compound, which is expressed as AlOxNy, where 0 less than or equal to y less than or equal to x and y/x+y less than or equal to 0.01. The first electrode and the second electrode are fired, where the dielectric layer after the firing is in an amorphous form. An INDEPENDENT CLAIM is included for a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of a solar cell.    Semiconductor substrate (110)    Antireflection layer (112)    Front electrodes (120)    Dielectric layer (130)    Protective layer (140)    Rear electrode. (150)