NOVELTY - A grid stack structure of solar cell comprises: silicon substrate; dielectric layer; mask layer applied on the front side to define grid opening of dielectric layer; light-induced plated nickel or cobalt layer applied to front side grid with electrical contact to back side aluminum (Al) metallization; silicide layer formed by rapid thermal annealing of plated nickel (Ni) or cobalt (Co); optional barrier layer deposited on silicide; copper (Cu) layer electrodeposited on silicide/barrier film layer; and thin protective layer applied chemically/electrochemically on top of the Cu layer.    USE - As a grid stack structure of a solar cell (claimed), used in silicon photovoltaic industry for screen printing of aluminum/silver (Al/Ag) based paste for grid metallization.    ADVANTAGE - The grid stack structure of solar cell is readily manufactured using a solution-based processing technique, which includes electroplating, which is efficient in operation and economical to manufacture. The method has cost competitiveness; is low temperature process; has good conductivity; and is easy to maintain thickness and aspect ratio of the cross-section of the conduction lines, and minimal shadowing.    DETAILED DESCRIPTION - A grid stack structure of a solar cell comprises: silicon substrate, where front side of the silicon is doped with phosphorus to form a n-emitter and back side of the silicon is screen printed with aluminum (Al) metallization; dielectric layer, which acts as an antireflection coating (ARC), applied on the silicon; a mask layer applied on the front side to define a grid opening of the dielectric layer, where an etching method is applied to open an unmasked grid area; light-induced plated nickel or cobalt layer applied to the front side grid with electrical contact to the back side Al metallization; a silicide layer formed by rapid thermal annealing of the plated nickel (Ni) or cobalt (Co); an optional barrier layer deposited on the silicide; a copper (Cu) layer electrodeposited on the silicide/barrier film layer; and a thin protective layer which is applied chemically or electrochemically on top of the Cu layer. An INDEPENDENT CLAIM is included for a method of a grid stack structure of a solar cell involving texturing a surface of a silicon substrate; doping a front side of the silicon with phosphorus to make a n-emitter; screen printing a back side of the silicon with aluminum (Al) metallization and fired at high temperature; depositing a dielectric layer, which acts as an antireflection coating (ARC) on the n-emitter; applying a mask on the front side to define the grid opening of the dielectric layer; etching to open the unmasked grid area; light-induced plating on the front side grid with electrical contact to the backside of aluminum metallized silicon layer, stripping the mask layer rapid thermal annealing the light induced plated layer to form a thin layer of silicide depositing a barrier layer on the silicide, depositing a layer of copper (Cu) on top of the silicide/barrier film; and depositing a protective layer on top of the Cu layer.    DESCRIPTION OF DRAWING(S) - The figure shows a side view of a structure of a grid stack.