NOVELTY - A flexible substrate suede zinc oxide (ZnO) film prepared by organic chemical gas phase deposition of metal, comprises polyethylene terephthalate (PET) that is used as the flexible substrate; where the substrate temperature is 125-160 degrees C; the diethyl zinc (DEZn) having purity of 99.995% and water are used as source material; the diborane (B2H6) having hydrogen thinning concentration of 1% is used as impurity gas; the boron (B) with ZnO transparent conductive film is grown; the film thickness is 800-1500 nm; and the film reaction pressure is 50-600 Pa.    USE - The flexible substrate suede zinc oxide film is useful for pin type alpha -silicon (Si) film solar cell and alpha -Si/ alpha -Si overlapped film solar cell, having structures comprising PET/ZnO/pin alpha -Si/aluminum (Al) and PET/ZnO/pin alpha -Si/Al (claimed).    ADVANTAGE - In the flexible substrate suede zinc oxide film, the PET material is cheap; the penetration rate is high; and the large-scale popularization is convenient. Moreover, the MOCVD technology can achieve the film growth at low temperature; and the ZnO film can be directly formed into suede structure and is good for light scattering. Additionally, the photo-electric conversion efficiency is high.    DETAILED DESCRIPTION - A flexible substrate suede zinc oxide (ZnO) film prepared by organic chemical gas phase deposition of metal, comprises polyethylene terephthalate (PET) that is used as the flexible substrate; where the substrate temperature is 125-160 degrees C; the diethyl zinc (DEZn) having purity of 99.995% and water are used as source material; the diborane (B2H6) having hydrogen thinning concentration of 1% is used as impurity gas; the boron (B) with ZnO transparent conductive film is grown; the film thickness is 800-1500 nm; the film reaction pressure is 50-600 Pa; and the film structure is flexible substrate PET/metal organic chemical vapor deposition (MOCVD)-ZnO. An INDEPENDENT CLAIM is a device for preparing the flexible substrate suede ZnO film comprising a gas conveying pipeline and a vacuum film plating chamber; where the gas conveying pipeline comprises an argon (Ar) gas carrying water (H2O) pipeline, an Ar gas carry DEZn pipeline, and a B2H6 impurity gas pipeline; the raw material H2O is taken out by the Ar gas carrying H2O through the inlet and the outlet of a closed H2O storage tank; the raw material DEZn is taken out by the Ar gas carry DEZn pipeline through the inlet and outlet of a closed DEZn storage tank; the three pipelines are respectively set with a pneumatic valve and a flow rate controller; the Ar gas carry H2O pipeline and the Ar gas carry DEZn pipeline are respectively set with a pressure gauge and a needle valve; a substrate, a heater, and a gas mixing box are mounted in the vacuum film plating chamber; the raw material gas enters the gas mixing box through the pipeline; the gas mixing box is formed with a sieve hole; and the mixed gas is sprayed on the substrate through the sieve hole, and the vacuum of the vacuum film plating chamber through the vacuum pump.