NOVELTY - The system comprises a first processing chamber having a first processing region coupled with a first precursor source assembly, a second processing chamber having a second processing region coupled with a second precursor source assembly, a third processing chamber having a third processing region, a central transfer chamber coupled with the first, second and the third processing chambers, a robotic device disposed within the central transfer chamber and transferrably coupled with the first, second and the third processing chambers, and a substrate support.    USE - The system is useful for heat treating a crystalline silicon substrate, which is useful for fabrication of silicon solar cells such as photovoltaic devices.    ADVANTAGE - The system is capable of rapidly heat treating the crystalline silicon substrate without breakage thus economically and efficiently fabricating the solar cell with reduced fabricating steps.    DETAILED DESCRIPTION - The system comprises a first processing chamber having a first processing region coupled with a first precursor source assembly, a second processing chamber having a second processing region coupled with a second precursor source assembly, a third processing chamber having a third processing region, a central transfer chamber coupled with the first, second and the third processing chambers, a robotic device disposed within the central transfer chamber and transferrably coupled with the first, second and the third processing chambers, and a substrate support having a substrate supporting surface and a heating element (355A) positioned adjacent to the substrate supporting surface. The first precursor source assembly is coupled with a source of a silicon precursor gas and a source of a phosphorus precursor gas, and is positioned to deliver the silicon precursor gas and the phosphorus precursor gas to the substrate supporting surface of the substrate support within the first processing region and to deliver the silicon precursor gas and the phosphorus precursor gas to an upper surface of a crystalline silicon substrate disposed on the substrate supporting surface of the substrate support within the first processing region. The second precursor source assembly is coupled with a source of an oxygen precursor gas, and is positioned to deliver the oxygen precursor gas to the substrate supporting surface of the substrate support within the second processing region and to deliver the oxygen precursor gas to an upper surface of an amorphous silicon film disposed on the crystalline silicon substrate disposed within the second processing region. The third processing chamber is configured to form a temperature gradient across the crystalline silicon substrate and the amorphous silicon film disposed on the crystalline silicon substrate during a solid phase crystallization process within the third processing region. The temperature gradient has a temperature of 5 degrees C at a lower surface of the crystalline silicon substrate greater than a temperature at the upper surface of the amorphous silicon film. The substrate supporting surface is configured to support a lower surface of the crystalline silicon substrate. The heating element is configured to heat the crystalline silicon substrate to a temperature sufficient to crystallize the amorphous silicon film by solid phase crystallization and to create a temperature gradient in which a temperature at the lower surface of the crystalline silicon substrate is greater than a temperature at the upper surface of the amorphous silicon film, and is configured to heat the lower surface of the crystalline silicon substrate to a temperature of 750-1200 degrees C for a time period of 5-30 seconds. The substrate support is positioned to heat the crystalline silicon substrate disposed within the first processing region.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a chamber for heating the second surfaces of the silicon substrates.    Substrate (226)    First surface (244)    Second surface (250)    Amorphous silicon layer (260)    Dielectric capping layer (270)    Heating element (355A)    Lamp controller. (355B)