NOVELTY - Photovoltaic cell structure for manufacturing a photovoltaic device comprises: (a) a substrate including a surface region; (b) a first conductor layer overlying the surface region; (c) a lower cell structure comprising a first P type absorber comprising a first metal chalcogenide material; (d) a first N+ type window layer comprising a second metal chalcogenide material; (e) a tunneling junction layer overlying the first N+ type window layer of the lower cell; and (f) an upper cell structure.    USE - The photovoltaic cell structure is useful for manufacturing a photovoltaic device (claimed).    ADVANTAGE - The multifunction solar cell structure can be provided using large scale manufacturing processes, which reduce cost in manufacturing the photovoltaic devices.    DETAILED DESCRIPTION - Photovoltaic cell structure for manufacturing a photovoltaic device comprises: (a) a substrate including a surface region; (b) a first conductor layer overlying the surface region; (c) a lower cell structure comprising a first P type absorber comprising a first metal chalcogenide material and/or other suitable semiconductor material overlying the first conductor layer, the first P type absorber material has a first bandgap of 0.5-1.0 eV, a first optical absorption coefficient greater than 104/cm, and a first thickness of 0.5-2 mu m; (d) a first N+ type window layer comprising a second metal chalcogenide material and/or other suitable semiconductor material overlying the first P type absorber layer; (e) a tunneling junction layer overlying the first N+ type window layer of the lower cell, the tunneling junction layer comprising at least a p++ type semiconductor material and an n++ type semiconductor material; and (f) an upper cell structure comprising: (i) a second P type absorber material comprising a third metal chalcogenide material overlying the tunneling junction layer, the second P type absorber material has a second bandgap of 1.0-2.2 eV and a second optical absorption coefficient greater than 104/cm, a second thickness of 0.5-2 mu m; (ii) a second N+ type window layer comprising a fourth metal chalcogenide material overlying the second absorber layer; (iii) a buffer layer overlying the second N+ type window layer of the upper cell structure, the buffer layer has a resistivity greater than 10 kohm-cm; and (iv) a second conductor layer overlying the buffer layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a simplified diagram of the photovoltaic cell structure.    Substrate member (102)    Surface region (104)    First electrode structure (108)    First absorber layer (112)    First window layer (114)    Second electrode structure (116)    Third electrode structure (120)    Second absorber layer (124)    Second window layer (126)    Fourth electrode structure (128)    First junction region (132)    Second junction region (134)    Buffer layer (148)