NOVELTY - Depositing a layer of an indium chalcogenide (17a, 17b) onto a substrate (1) involves providing an indium source (77a, 77b) in a reaction zone (18a, 18b), providing a gaseous source (79a, 79b) of a chalcogen in the reaction zone, heating the substrate, and thereby in the reaction zone converting at a pressure of approximately atmospheric ambient pressure indium originating from the indium source and the chalcogen originating from the source of a chalcogen to an indium chalcogenide being deposited onto a surface (2) of the substrate; and a gaseous mixture comprising a carrier gas, the indium source and the chalcogen source is provided in the reaction zone.    USE - For depositing a layer of an indium chalcogenide onto a substrate (claimed), used in semiconductor technology e.g. solar cell.    ADVANTAGE - The method reduces complexity of indium chalcogenide deposition, as no vacuum is needed and as processing time is short as compared to chemical bath deposition. The indium chalcogenide layers are deposited sequentially. The resulting several sublayers form together the final layer having the desired thickness. In doing so, properties of the deposited indium chalcogenide layer can be improved. It allows a high throughput in manufacturing of thin film solar cells, for example, particularly in connection with inline production lines.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for apparatus for carrying out the method comprising a reactor, into which substrates can be introduced, a gas inlet slot for feeding gases into the reactor, and a transport device for moving the substrates through the reactor, and at least one premixing device for prexmixing an indium comprising precursor gas with a chalcogen comprising precursor gas is provided and that a gaseous mixture can be fed from the premixing device into the reactor via the gas inlet slot.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of method for depositing a layer of an indium chalcogenide onto a substrate.    Substrate (1)    Surface of substrate (2)    Direction of substrate transport (5)    Indium chalcogenide (17a, 17b)    Reaction zone (18a, 18b)    Indium source (77a, 77b)    Gaseous source (79a, 79b)