NOVELTY - A layer of base layer of stainless steel or organic glass polymethylmethacrylate or organic glass polyethylene terephthalate, is prepared. The surface is cleaned, baked and ground. A transition layer is formed on the base layer using copper or chromium. A reflecting layer is formed on the transition layer using silver. A protective layer is formed on the reflecting layer using silica by magnetic sputtering. A self-cleaning layer is formed on the protective layer, to obtain self-cleaning solar energy high-reflective nanofilm.    USE - Manufacture of self-cleaning solar energy high-reflective nanofilm (claimed).    ADVANTAGE - The method provides nanofilms having high reflectivity, self-cleaning function, and outdoor service life, and can be rinsed with water for smoothness and brightness.    DETAILED DESCRIPTION - A layer of base layer of stainless steel or organic glass polymethylmethacrylate or organic glass polyethylene terephthalate, is prepared with a thickness of 0.3-1.2 mm. The surface is cleaned using a decontaminating agent, cleaning using distilled water, baked for 1 minute, and ground for 2 minutes to a finish degree of more than level 13. A transition layer is formed on the base layer using copper or chromium to a target size of 60x 5 mm by magnetic sputtering, with a purity of 99.99%. The sputtering gas is 99.999% high-purity argon, the vacuum degree is 6.1x 10-4 Pa, the work pressure is 0.7 Pa, the target distance is fixed at 75 mm, the flow of argon is 22 sccm, the sputtering power of copper or chromium is 40 W, the sputtering speed is 48.2 nm/minute and 43.6 nm/minute, and the thickness thereof is 20-50 nm. A reflecting layer is formed on the transition layer by magnetic sputtering of silver. The target size of silver is 60x 5 mm, the purity is 99.99%, the sputtering gas is 99.999% high-purity argon, the vacuum degree is 6.1x 10-4 Pa, the work pressure is 0.7 Pa, the target distance is fixed at 75 mm, the flow of argon is 22 sccm, the sputtering power of copper or chromium is 40 W, the sputtering speed is 64.4 nm/minute, and the thickness is 80-150 nm. A protective layer is formed on the reflecting layer using silica by magnetic sputtering. The target size of silica is 60x 5 mm, the purity is 99.99%, the sputtering gas is 99.999% high-purity argon, the vacuum degree is 6.1x 10-4 Pa, the work pressure is 0.7 Pa, the target distance is fixed at 75 mm, the flow of argon is 22 sccm, the sputtering power of copper or chromium is 40 W, the sputtering speed is 64.4 nm/minute, and the thickness is 200-800 nm. A self-cleaning layer is formed on the protective layer. The self-cleaning layer is titanium dioxide, the target size of titanium dioxide is 60x 3 mm, the purity is 99.99%, the sputtering gas is 99.999% high-purity argon, the vacuum degree is 6.1x 10-4 Pa, the work pressure is 0.7 Pa, the target distance is fixed at 75 mm, the flow of argon is 22 sccm, the sputtering power is 180 W, the sputtering speed is 5.3 nm/minute, and the thickness is 50-200 nm, to obtain self-cleaning solar energy high-reflective nanofilm.