NOVELTY - An organic semiconductor material, layer or component comprises a polymer.    USE - An organic semiconductor material, layer or component in the form of a composition to dissolved or dispersed in a liquid medium for use as semiconductor, charge transport material or thin-film transistor for composite or a semiconductor device, preferably organic photovoltaic device (solar cell), diode, organic light-emitting diodes, sensors, batteries, photodiode, optical waveguide, organic field effect transistor or electrophotography application (claimed).    ADVANTAGE - The material has improved morphology in solid state.    DETAILED DESCRIPTION - An organic semiconductor material, layer or component comprises a polymer having repeating structural units (A) and (COM) having a weight ratio of 1-20:1-20.    A=benzodithiophene repeating unit of formula (i) or (ii);and    COM=formulae (iii)-(xvi).    G1-G5=H, halo, or A;    A=1-25C alkyl, O and/or S-interrupted 2-25C alkyl, 1-25C alkoxy, 3-12C cycloalkyl, 2-25C alkenyl, 2-25C alkynyl, 4-25C aryl, 5-25C alkylaryl or 5-25C aralkyl (all optionally substituted with A');    A'=H, halo, NO2, CN, 6-18C aryl or greater than or equal to 2C alkyl that may be interrupted by O, COO, OCO or S;    R1-R2=H, COOR103, 1-100C alkyl (optionally substituted with A'), 7-100C arylalkyl, carbamoyl, 5-12C cycloalkyl (optionally substituted with 1-3 1-8C alkyl and/or 1-8C cycloalkoxy), 6-24C aryl (preferably Ph), pentafluorophenyl, or 1-2 naphthyl (optionally substituted with 1-8C alkyl, 1-8C thioalkoxy and/or 1-8C alkoxy);    R3, R'3=H, halo, 1-25C alkoxy, or 1-5C alkyl (optionally substituted with O and/or S);    R4, R4'=H, halo,7-25C arylalkyl, 1-25C alkoxy or 1-25C alkyl (optionally substituted with O and/or S);    X1-X2=O, S, NR8, Si(R11)(R11'), C(R7)(R7'), C(=O), or formulae (a)-(d);    X3-X4=N or CR99;    R7, R7'=H, 7-25C arylalkyl or 1-35C alkyl (optionally substituted with O and/or S);    R11, R11'=1-35C alkyl, 7-25C arylalkyl or Ph (optionally substituted with 1-8C alkyl and/or 1-8C alkoxy);    R103=1-50 (preferably 4-25)C alkyl;    R99, R104, R104'=H, halo, 7-25C arylalkyl, 1-25C alkoxy or 1-25 (preferably 4-25)C alkyl (optionally substituted with O and/or S);    R105, R105'=H, halo, 7-25C arylalkyl, 1-18C alkoxy or 1-25C alkyl (optionally substituted with O and/or S);    R107=H, 6-18C aryl, 1-18C alkyl, 2-18C alkyl (optionally interrupted with O) or 6-18C aryl (optionally substituted with 1-18C alkyl or 1-18C alkoxy);and    p=0-3.    X5=O or NR8;    R5, R5'=H, halo, CN, 7-25C arylalkyl, 1-25C alkoxy, 6-24C aryl (optionally substituted with 1-8C alkyl and/or 1-8C alkoxy), or 1-25C alkyl (optionally substituted with O and/or S);    R6=H, 1-18C alkyl (optionally substituted with O and/or S), 1-18C perfluoroalkyl, 6-24C aryl (optionally substituted with 1-8C alkyl and/or 1-8C alkoxy), 2-20C heteroaryl (optionally substituted with 1-8C alkyl and/or 1-8C alkoxy);    R8, R8'=H, 7-25C arylalkyl, 1-25 (preferably 4-25)C alkyl (optionally substituted with O and/or S), 6-18C aryl (optionally substituted with 1-18C alkyl or 1-18C alkoxy);or    R5R5'=forms a ring.    INDEPENDENT CLAIMS are included for:    (1) preparation of a composite or device comprising dissolving polymer in a liquid medium to form a solution; depositing the solution on a substrate (especially by spin coating, drop casting, dip coating, printing); and removing the solvent to form a thin film semiconductor on the substrate; and    (2) preparation of the polymer comprising reacting a dihalogenide of formula X10-A-X10 or X10-(COM1)-X10 with a diboronic acid or diboronate of formula X11-(COM1)-X11 or X11'-A-X11' in a solvent and in the presence of catalyst; reacting a dihalogenide of formula X10-A-X10 or X10-(COM1)-X10 with an organo tin compound of formula X'11-(COM1)-X'11 or X11'-A-X'11'.    X10=halo (preferably Br);    X11=B(OH)2, B(OY1)2 or formulae (xvii)-(xviii);    Y1=1-10C alkyl;    X'11'=SnR207R208R209;    R207-R209=H or 1-6C alkyl;or    2 groups of R207-R209=form a ring.    Y2=2-10C alkylene;and    Y13-Y14=H or 1-10C alkyl.