NOVELTY - The method comprises cleaning or etching a surface of a substrate (510), where the surface has an exposed crystalline, polycrystalline or microcrystalline material (515) after cleaning or etching, and blanket depositing a liquid-phase ink on the exposed crystalline, polycrystalline or microcrystalline material in a predetermined pattern by printing or coating, heating (poly)silane, (poly)germane and/or (poly) germasilane of the liquid-phase ink at a first temperature of 50-200 degrees C and for a length of time 1-60 minutes sufficient for a film or feature.    USE - The method is useful for forming an epitaxial structure, which is useful in a photovoltaic device, a light sensor, an image sensor, a light emitting device, a micro-electro-mechanical system device (claimed), analog device, mixed signal and complementary metal oxide semiconductor devices and/or devices such as diodes, MOSFET devices, silicon-on-insulator devices, bipolar transistors and/or thin film transistors, where the epitaxial structure is ohmic contacts, collector contacts, source/drain contacts and selective emitters and the photovoltaic devices include solar cell architectures, N+/P/P+ cells, cells based on N-type wafers (P+/N/N+ cells), back contact cells and front emitter wrap through cells.    ADVANTAGE - The method is capable of economically forming the epitaxial structure with good film quality such as texture, density and/or purity and increased adhesion and electrical conductivity thus improving power conversion efficiency, contact resistance and light absorption of the device.    DETAILED DESCRIPTION - The method comprises cleaning or etching a surface of a substrate (510), where the surface has an exposed crystalline, polycrystalline or microcrystalline material (515) after cleaning or etching, blanket depositing a liquid-phase ink on the exposed crystalline, polycrystalline or microcrystalline material in a predetermined pattern by printing or coating, heating (poly)silane, (poly)germane and/or (poly) germasilane of the liquid-phase ink at a first temperature of 50-200 degrees C and for a length of time 1-60 minutes sufficient for a film or feature formed from the (poly) silane, (poly)germane and/or (poly)germasilane to adopt a crystalline structure of an exposed material, curing the (poly)silane, (poly)germane and/or (poly)germasilane at a second temperature of 300-600 degrees C for a length of time 1-60 minutes for forming a hydrogenated, amorphous group IVA semiconductor element film or feature, irradiating the liquid-phase ink with actinic radiation simultaneously and/or immediately subsequent for depositing the liquid-phase ink on the substrate, depositing a second ink on the substrate in regions (545a, 545b, 545c, 545d) other than where the liquid-phase ink is selectively deposited, and printing a dopant ink in a predetermined pattern onto the film and then diffusing a dopant from the dopant ink into the film or forming a patterned mask on the film and then diffusing or implanting the dopant into regions of the film not covered by the patterned mask. The film or feature is heated to a temperature of 600 degrees C, and the length of time is sufficient to form an epitaxial layer. The step of cleaning or etching the surface of the substrate comprises sputter etching or plasma etching the surface of the substrate with a liquid- or vapor-based etchant. The liquid-phase ink is printed or coated by inkjet printing, gravure printing, flexographic printing, offset lithography, screen printing, slit coating, slit die coating, spin coating, extrusion coating, pen coating, or spray coating. The second ink has the dopant concentration less than the liquid-phase ink. The doped ink comprises the same or different precursor of the same or different group IVA element and the dopant. The substrate comprises a single-crystalline wafer, a polycrystalline wafer, a multicrystalline wafer, a metallurgical-grade wafer, a ribbon or a band consisting essentially of the same or different group IVA semiconductor element as the film or feature, and a ceramic substrate or a porous silicon substrate. An INDEPENDENT CLAIM is included for an epitaxial structure.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of a method of forming an epitaxial structure.    Substrate (510)    Microcrystalline material (515)    Doped regions (530a, 530b, 530c)    Contacts (540a, 540b, 540c)    Regions. (545a, 545b, 545c, 545d)