NOVELTY - A carrier with substrate is transferred to a vacuum chamber. A plasma cation is collided with both sides of substrate. A high-refractive oxide layer is formed and plasma cation is collided with the high-refractive oxide. A low-refractive oxide layer is formed and plasma cation is collided with the low-refractive oxide. A conductive oxide layer is formed and plasma cation is collided with the conductive oxide. A transparent conductive thin film is then formed on the substrate.    USE - Production of transparent conductive thin film for organic light-emitting device and touch panels (both claimed). Can also be used for LCDs, LEDs, smart windows, optical devices, and solar cells.    ADVANTAGE - The method enables production of transparent conductive thin films having low surface roughness and high transmittance, using less number of processes.    DETAILED DESCRIPTION - A transparent conductive thin film is formed using a load lock chamber in which a carrier with a substrate is loaded, an unloading chamber in which the carrier with the substrate is discharged, buffer chambers (I,II) in which a turbo molecular bump for vacuum setting is installed, and a process chamber comprising process chambers (I-IV). The carrier with substrate is transferred to a vacuum chamber through the load lock chamber. A plasma cation generated in a plasma generation device is collided with both sides of substrate in process chamber (I). A high-refractive oxide layer is formed by sputtering a high-refractive oxide on both sides of substrate, and plasma cation is collided with the high-refractive oxide in process chamber (II). A low-refractive oxide layer is formed by sputtering a low-refractive oxide on both sides of substrate, and plasma cation is collided with the low-refractive oxide in process chamber (III). A conductive oxide layer is formed by sputtering a conductive oxide on both sides of substrate, and plasma cation is collided with the conductive oxide in process chamber (IV). A transparent conductive thin film having a roughness of 0.32 nm and a light transmittance of 90.96% is then formed on the substrate.