TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method, a dielectric constant of a main constituent element is 20 or lower. The heating step heats at a rate of 30 degrees C/minute or higher. The cooling step cools at a rate of 80 degrees C/minute or higher. The nanoparticles growth is controlled by adjustment of kinetic and thermodynamic barriers by power, temperature, time or additive. The constituent elements include ionic liquids that enhance formation rates of the nanoparticles. The nanoparticles are treated by ambient photo-chemical etching after it. Preferred Components: The nanoparticles are metal, semiconductor or insulator nanoparticles. The nanoparticles have organic or inorganic compounds attached to their surface. The nanoparticles comprise indium-gallium-phosphorus complex of formula (In(1-x)GaxP).x = 0-0.2. EXAMPLE - Indium III acetate (0.700 mmol), gallium (III) 2,4-pentanedionate (0.070 mmol) and hexadecanoic acid (2.30 mmol) were mixed with either octadecene or hexadecene (50 ml). The mixture was heated to 160 degrees C until the solution turned clear. The temperature of the stock solution was reduced to 110 degrees C under vacuum and purged with argon three times. For 4.8 nm quantum dots, the cation stock solution was prepared with octadecene and mixed with tris(trimethylsilyl)phosphine in the reaction vessel via syringe at 50 degrees C with a cation: anion mole ratio of 2:1.5 ml of the stock solution was placed in a 10 ml sealed reactor vial. Reactor temperature and pressures were monitored continuously to ensure safety, with pressures not exceeding, 1.7 atmospheric pressure during the course of the reaction. The power level of the 60 ramp was 300 watts. The hold temperature was 280 degrees C for 15 minutes, with a constant power level of 280 watts during the reaction. To ensure controlled dispersity, the reaction vessel was rapidly cooled, via a quenching Oswald ripening process, 280-95 degrees C over a period of 2 minutes using compressed air. Depending on the concentration of precursors, the ramp rate to achieve the hold temperature ranged from 4-6 minutes with the more dilute samples taking longer, due to the heating arising from direct dielectric heating of the precursors, rather then the thermal heating of the solvent. Size control for these materials was achieved by controlling the concentration of the constituent elements in the reactant, where high heating rate was 32 degrees C/minute and the main constituent of the reactant was octadecene (Dielectric constant was 2.1-2.2). Approximately 4.8 nm nanoparticles were grown (when octadecene was used as the non-coordinating solvent).