NOVELTY - A film of molybdenum (Mo) (220) is formed on soda lime glass substrate (210). A film of copper indium gallium diselenide (CIGS) (230) is arranged on molybdenum film. A buffering layer (240) is arranged on gallium diselenide film. A layer of zinc oxide (i-ZnO) (250) is provided above buffering layer. A p1 scribe is formed of molybdenum film, copper indium gallium diselenide film and buffering layer and another scribe (270) is formed on molybdenum layer. A layer of aluminum doped zinc oxide (AZO) (260) serves as window electrode and is deposited on solar cell and scribe.    USE - Thin film solar cell device.    ADVANTAGE - There is no need to include third scribe to isolate the aluminum doped zinc oxide top window electrode between the adjacent cells this improves the yield and increases the cell power by avoiding wasted space which is occupied by third scribe. The cell power efficiency is also increased by avoiding an electrical shunt path between cells at the scribe. Also, the edge of the p-n junction near the top of the copper indium gallium diselenide film is not short-circuited by a conductive electrode material such as AZO. Scribing of the both scribe is done only after all films are deposited, this avoids breaking of vacuum between the zinc oxide layer and the zinc oxide film.    DETAILED DESCRIPTION - The device has a film of molybdenum (Mo) that is arranged on soda lime glass substrate. A film of copper indium gallium diselenide (CIGS) is arranged on molybdenum film. A buffering layer is arranged on copper indium gallium diselenide film. A layer of zinc oxide (i-ZnO) (250) is provided above buffering layer. A scribe is formed of molybdenum film, copper indium gallium diselenide film and buffering layer and another scribe is formed from copper indium gallium diselenide film, the buffering layer and the zinc oxide layer. An insulating layer (292) is deposited on scribe. A layer of aluminum doped zinc oxide (AZO) which serves as window electrode is deposited on solar cell and scribe. An INDEPENDENT CLAIM is included for method for receiving a deposited conducting material in a vacuum chamber.    DESCRIPTION OF DRAWING(S) - The drawing shows a side perspective view of solar cell.    Solar cell device (200)    Soda lime glass substrate (210)    Molybdenum Film (220)    Copper indium gallium diselenide film (230)    Buffering layer (240)    Zinc oxide layer (250)    Aluminum doped zinc oxide layer (260)    Scribe (270)    Insulating layer (292)