TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The window layer, the emitter layer, the base layer and the BSF layer comprise materials including AlInP, aluminum arsenide, aluminum phosphide, AlGaInP, aluminum gallium arsenide phosphate, aluminum gallium indium arsenide, aluminum gallium indium phosphorus arsenide, gallium indium phosphate, GaInAs, GaInPAs, AlGaAs, aluminum indium arsenide, aluminum indium phosphorus arsenide, gallium arsenide antimonide, gallium aluminum arsenide antimonide, aluminum indium antimonide (GaInSb), gallium indium antimonide, aluminum gallium indium antimonide, aluminum nitride, gallium nitride, indium nitride, gallium indium nitride (GaInN), aluminum gallium indium nitride, gallium indium, aluminum indium nitrogen arsenide, aluminum gallium indium nitrogen arsenide, Ge, silicon, silicon germanium, zinc sulfur selenide (ZnSSe), and cadmium sulfide selenide. The base layer and the high-miscut-angle growth substrate comprise materials including phosphorus-germanium, gallium arsenide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, gallium phosphide, silicon, silicon germanium, silicon carbide, Ge, silicon, aluminum oxide, cadmium telluride, zinc telluride, zinc selenide, cadmium sulfide, zinc sulfide and zinc oxide. The highmiscut-angle growth substrate influences an ordering or disordering of sublattice consisting of: a group-III sublattice of III-V semiconductors containing element from group III of the periodic table, which includes GaInP, GaInAs, GaInPAs, GaInSb, gallium indium phosphorus antimonide, GaInN, aluminum gallium nitride (AlGaN), aluminum indium nitride, gallium indium nitrogen phosphide (GalnNP), gallium indium nitrogen arsenide (GalnNAs), gallium indium nitrogen arsenic antimonide (GalnNAsSb), AlInP, AlGaInP, AlGaAs, aluminum gallium indium arsenide (AlGaInAs), aluminum gallium arsenide antimonide, aluminum gallium phosphorus arsenide (AlGaPAs), aluminum indium arsenide (AlInAs), aluminum indium phosphorus arsenide (AlInPAs), aluminum indium antimonide and aluminum indium phosphorus antimonide; a group-V sublattice of III-V semiconductors containing element from group V of the periodic table including gallium arsenide antimonide (GaAsSb), gallium phosphorus arsenide (GaPAs), GaInPAs, gallium indium phosphorus antimonide (GaInPSb), gallium indium nitrogen phosphide (GaInNP), GaInNAs, gallium indium nitrogen arsenide antimonide (GaInNAsSb), aluminum gallium arsenide antimonide (AlGaAsSb), AlGaPAs, indium phosphorus arsenide (InPAs), AlInPAs, and aluminum indium phosphorus antimonide (AlInPSb); a group-II or group-VI sublattice of II-VI semiconductors including cadmium zinc selenide (CdZnSe), cadmium zinc telluride (CdZnTe), zinc sulfur selenide (ZnSSe), zinc selenide telluride (ZnSeTe), and cadmium zinc selenide telluride (CdZnSeTe); a group-IV lattice of mixed-column-IV semiconductors including silicon germanium (SiGe) and SiC; a group-I, group-III or group-VI sublattice in compound semiconductors including copper gallium indium selenide (CuGalnSe), silver gallium indium telluride (AgGalnTe), copper gallium indium sulfide (CuGalnS), copper gallium indium telluride (CuGalnTe), silver gallium indium telluride (AgGalnTe), copper gallium indium sulfur selenide (CuGalnSSe), silver copper gallium indium selenide (AgCuGalnSe) and silver copper gallium indium sulfur selenide (AgCuGalnSSe); a group-V sublattice of III-V semiconductors containing element from group V of the periodic table including GaAsSb, GaPAs, GaInPAs, GaInPSb, GaInNP, GaInNAs, GaInNAsSb, AlGaAsSb, AlGaPAs, InPAs, AlInPAs, and AlInPSb; a group-II or group-VI sublattice of II-VI semiconductors including: CdZnSe, CdZnTe, ZnSSe, ZnSeTe and CdZnSeTe; a group-IV lattice of mixed-column-IV semiconductors including SiGe and SiC; and a group-I, group-III or group-VI sublattice in compound semiconductors including copper gallium indium selenide (CuGaInSe), silver gallium indium selenide (AgGaInSe), copper gallium indium sulfide (CuGaInS), copper gallium indium telluride (CuGaInTe), silver gallium indium telluride (AgGaInTe), copper gallium indium sulfur selenide (CuGaInSSe), silver copper gallium indium selenide (AgCuGaInSe) and silver copper gallium indium sulfur selenide (AgCuGalnSSe).    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - The substrate comprises a (115) surface. The GaInP middle subcell heterojunction emitter layer replaces the GaInAs middle cell emitter layer. The GaInP, AlGaInP, and AlInP layers are high-bandgap, disordered layers. The disordered (high-bandgap) structures are provided in a multijunction cell, where the structures include a disordered (high-bandgap) AlInP top subcell window, a disordered (high-bandgap) GaInP top subcell emitter, a disordered (high-bandgap) GaInP top subcell base, a disordered (high-bandgap) AlGaInP top subcell BSF, a disordered (high-bandgap) GaInP tunnel junction layer, a disordered (high-bandgap) AlInP window layer on the GaInAs subcell, a disordered (high-bandgap) GaInP window layer on the GaInAs subcell, a disordered (high-bandgap) GaInP heterojunction emitter in the GaInAs subcell, a disordered (high-bandgap) GaInP BSF layer on the GaInAs subcell, and a disordered (high-bandgap) GaInP nucleation layer and window layer disposed on the Ge bottom subcell. The Ge substrate is an active subcell. The high-miscut-angle growth substrate increases doping levels in the tunnel junction layer. The tunnel junction layer comprises a material consisting of a GaInP:Te n-type side of the tunnel junction layer; and a AlGaAs:carbon (C) p-type side of the tunnel junction layer. The highmiscut-angle growth substrate increases doping levels, incorporation and activation fractions in the subcell window layer. A doping occurs from silicon (Si), selenide (Se) or telluride (Te) doping in an n-type AlInP window layer, Si, Se, or Te doping in an n-type GaInP window layer, Si, Se or Te doping in an n-type GaInP emitter layer, and zinc (Zn) doping in a p-type AlGaInP or AlInP BSF layer. The highmiscut-angle growth substrate increases minority-carrier lifetime in the base layer for a 1%-indium (In) composition of a GaInAs layer or subcell lattice-matched to the high-miscut-angle growth substrate. The base layer is comprised of GaInAs, and where the substrate is a 15.8 degrees -miscut Ge substrate. The highmiscut-angle growth substrate increases GaInAs photovoltaic cell voltage. The highmiscut-angle growth substrate improves surface morphology of grown semiconductor layers, reduces surface defects, and reduces haze. The highmiscut-angle growth substrate increases a growth rate of GaInP layer disposed upon that substrate. The highmiscut-angle growth substrate improves mechanical strength or yield through device fabrication processes for device disposed upon the substrate.