NOVELTY - A photoelectric conversion device comprises a photoelectric conversion semiconductor layer (10) for generating an electric current when it absorbs light. The semiconductor layer comprises a single particle film comprising a binder layer (12); and separate photoelectric conversion semiconductor particles (11) having part(s) that are embedded in the binder layer, mean particle diameter of 1-60 mu m and a variation coefficient of particle diameter of less than 30%.    USE - A photoelectric conversion device for a solar battery (claimed).    ADVANTAGE - The device has good output stability and good photoelectric conversion efficiency, and can be manufactured without requiring a high temperature process of over 250 degrees C thus lowering production costs than those produced using a vacuum film formation process.    DETAILED DESCRIPTION - A photoelectric conversion device comprises:    (A) a photoelectric conversion semiconductor layer (10) for generating an electric current when it absorbs light;    (B) a first electrode (30) formed in contact with a front surface forming a light absorbing surface of the semiconductor layer; and    (C) a second electrode formed in contact with a rear surface of the semiconductor layer.    The semiconductor layer comprises a single particle film comprising a binder layer (12); and separate photoelectric conversion semiconductor particles (11) having part(s) that are embedded in the binder layer, mean particle diameter of 1-60 mu m and a variation coefficient of particle diameter of less than 30%. The parts of the semiconductor particles are in contact with the second electrode at the rear surface. The parts of the semiconductor particles are in contact with the first electrode at the front surface via a buffer layer (20).    DESCRIPTION OF DRAWING(S) - The drawing is a schematic sectional view of a photoelectric conversion device.    Photoelectric conversion semiconductor layer (10)    Separate photoelectric conversion semiconductor particles (11)    Binder layer (12)    Buffer layer (20)    First electrode (30)