NOVELTY - Making a sputtering target comprises: combining a copper, indium and gallium containing material and a sodium compound containing material to form a combined sputtering material comprising the copper, indium, gallium and sodium compound; and providing the combined sputtering material onto a target support to form a copper, indium, gallium and sodium compound containing target, where the combined sputtering material comprises at least one wire core surrounded by a wire shell comprising a copper indium gallium alloy which contains no sodium or less sodium than the wire core.    USE - The methods are useful for making a sputtering target and photovoltaic device (claimed), where the target is useful for making copper-indium-gallium-selenide solar cells.    ADVANTAGE - The method improves the efficiency of a solar cell.    DETAILED DESCRIPTION - Making a sputtering target comprises: combining a copper, indium and gallium containing material and a sodium compound containing material to form a combined sputtering material comprising the copper, indium, gallium and sodium compound; and providing the combined sputtering material onto a target support to form a copper, indium, gallium and sodium compound containing target, where the combined sputtering material comprises at least one wire core surrounded by a wire shell comprising a copper indium gallium alloy which contains no sodium or less sodium than the wire core, and the step of providing comprises cored twin arc wire spray depositing the combined sputtering material onto the target support. An INDEPENDENT CLAIM is included for making a photovoltaic device, comprises moving a web substrate though a sputtering chambers, forming a compound semiconductor layer comprising copper, indium, gallium, selenium and sodium by reactive sputtering at least one first target comprising copper, indium, gallium and a sodium compound in an atmosphere comprising selenium in a first chamber of the chambers, forming a first electrode below the first p-type copper indium gallium selenide absorber layer (p layer), forming an n-type window semiconductor layer (n layer) over the first p layer, and forming a transparent electrode over the n layer, where the compound semiconductor layer comprises a sodium doped first p layer, and the step of forming the compound semiconductor layer comprises: depositing the sodium doped first p layer over the first electrode by sputtering the first target comprising a sodium-transition metal salt, and depositing a second p layer over the sodium doped first p layer by sputtering at least one second target comprising copper, indium, gallium and either no sodium or lower amount of sodium than the first target, where the second p layer contains no sodium or lower sodium content that the sodium doped first p layer; or depositing a second p layer over the first electrode by sputtering the second target, and depositing the sodium doped first p layer over the second p layer by sputtering the first target.    DESCRIPTION OF DRAWING(S) - The figure shows a top view of a modular sputtering apparatus.    Web splicing region or device (29)    Heater arrays (30)    Input spool, output spool (31a, 31b)    Roller (32)    Shield. (33)