NOVELTY - The inline chemical vapor deposition (CVD) system (10) comprises a manifold having ports comprising a first precursor port, a pair of second precursor ports and a pair of pumping ports, a continuous transport system, a radiant heater that is positioned proximate to a substrate (14) and is arranged to heat the substrate to a desired process temperature, an additional manifold, a unit for providing a first flow of a first precursor gas in a first direction along a surface of the substrate, and a unit for providing a first flow of a second precursor gas in the first direction.    USE - The inline chemical vapor deposition system is useful for depositing a semiconductor, dielectric, metallic and other thin films onto a surface of a substrate, and for processing semiconductor wafers in a manufacture of solar cells and devices such as flat panel displays.    ADVANTAGE - The inline chemical vapor deposition system is capable of rapidly, economically and efficiently depositing the semiconductor, dielectric, metallic and other thin films onto the surface of the substrate with high quality and throughput capacity and without contamination thus reducing or preventing unwanted deposition byproducts and minimizing non-uniformity in the deposited layer.    DETAILED DESCRIPTION - The inline chemical vapor deposition (CVD) system (10) comprises a manifold having ports comprising a first precursor port, a pair of second precursor ports and a pair of pumping ports, a continuous transport system, a radiant heater that is positioned proximate to a substrate (14) and is arranged to heat the substrate to a desired process temperature, an additional manifold, a unit for providing a first flow of a first precursor gas in a first direction along a surface of the substrate, a unit for providing a first flow of a second precursor gas in the first direction along the surface of the substrate to mix with the first flow of the first precursor gas, a unit for providing a second flow of the first precursor gas in a second direction along the surface of the substrate, a unit for providing a second flow of the second precursor gas in the second direction along the surface of the substrate to mix with the second flow of the second precursor gas, and a unit for transporting the substrate in the second direction so that the surface of the substrate is first exposed to the mixed first flows of the first and second precursor gases and subsequently exposed to the mixed second flows of the first and second precursor gases. The first precursor port is disposed between the second precursor ports, and comprises a pair of first precursor ports. The pair of second precursor ports is disposed between the pumping ports. The first precursor ports and the pair of second precursor ports are configured for coupling to a first precursor gas source and a second precursor gas source respectively. The pumping ports are configured to couple to a discharge system to exhaust the first and second precursor gases during a CVD process. The continuous transport system: transports the substrate adjacent to the ports during the CVD process at a constant rate; comprises a web transport system configured to transport a web substrate adjacent to the ports; and is configured to transport discrete substrates adjacent to the ports. The web transport system comprises rollers to transport the web substrate. The manifold further comprises a port disposed between the first precursor port and one of the second precursor ports and a purge port disposed between the pair of first precursor ports, is configured for coupling to an inert gas source, and is disposed underneath a portion of the continuous transport system so that the flow of each of the precursor gases exits the respective one of the ports in an upward direction toward the substrate. A flow rate of each of the precursor gases is constant across the respective port. The discrete substrates are wafers and sheets of glass. The manifold and the additional manifolds are arranged in a linear configuration. The substrate is sequentially transported past the manifold and the additional manifolds. The additional manifolds, the first precursor port and/or the pair of second precursor ports are configured for coupling to the second precursor gas source and the first precursor gas sources. One of the pumping ports of the manifold is a same pumping port as one of the pumping ports of a neighboring one of the additional manifolds. The web substrate is positioned in a thermal contact with a heating element to heat the web substrate to a desired process temperature. The CVD process is a plasma enhanced CVD process. The purge port is configured for coupling to an inert gas source. An INDEPENDENT CLAIM is included for a method for inline chemical vapor deposition.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of an inline chemical vapor deposition (CVD) system.    Inline CVD system (10)    Web substrate (14)    Supply roller (22A)    Receive roller (22B)    Additional rollers (22C)    First deposition station. (26A)