TECHNOLOGY FOCUS - POLYMERS - Preferred Process: In producing transparent conducting film, the step of disposing the composition onto the substrate comprises spraying, dip-coating or spin-coating the composition onto the substrate. The composition comprises a sol gel. It is a solution or a dispersion. The composition comprises a compound comprising Zn, a compound comprising Si, and a solvent. The steps of disposing the composition onto the substrate and heating the substrate are performed simultaneously. Disposing the composition onto the substrate comprises spraying the composition onto the substrate. The process comprises spray pyrolysis, where spraying the composition onto the heated substrate causes pyrolitic decomposition of the composition and formation of a layer of the doped zinc oxide. Spraying is performed with the aid of a carrier gas. Spraying the composition onto the substrate comprises: (i) introducing the composition and the carrier gas into a spray head, where the composition is introduced at a first flow rate and the carrier gas is introduced at a second flow rate, where the first and second flow rates are the same or different; and (ii) spraying the composition onto the substrate from an exit of the spray head. The exit of the spray head comprises a nozzle. The distance between the exit of the spray head and the substrate is from 10 cm to 40 cm. Spraying the composition onto the substrate comprises spraying a jet of fine droplets of the composition onto the substrate. The droplets have a diameter of from 1 to 100 mu m. Spraying the composition onto the substrate is performed until a film thickness of from 100 nm to 1000 nm is achieved. The duration of the step of spraying the composition onto the substrate is from 5 minutes to 40 minutes. Heating the substrate comprises maintaining the substrate at an elevated temperature for the duration of the step of spraying the composition onto the substrate. Heating the substrate comprises maintaining the substrate at a temperature of from 200 degrees C to 500 degrees C. Heating the substrate is performed in air. The molar ratio of Si to Zn in the composition is x:(1-x), where x is greater than 0 and less than or equal to 0.25; or the molar ratio of Si to Zn in the doped zinc oxide is x:(1-x), where x is greater than 0 and less than or equal to 0.25; or the molar ratio of Si to Zn in the composition is x:(1-x), where x is from 0.005 to 0.04; or the molar ratio of Si to Zn in the doped zinc oxide is x:(l-x), where x is from 0.005 to 0.04. The doped zinc oxide comprises a compound comprising Zn1-x(M)xO1-y(X)y.x=greater than 0 and less than or equal to 0.25 or 0.005-0.04;y=0-0.1;(X)=when present, is at least one dopant element which is a halogen; and(M)=a dopant element which is Si, or a combination of two or more different dopant elements, one of which is Si.Preferably, y is other than 0 and: (i) the composition comprises the at least one dopant element which is a halogen; (ii) the step of disposing the composition onto a substrate is performed in the presence of a gas comprising the at least one dopant element which is a halogen; and/or (iii) the step of heating the substrate is performed in the presence of a gas comprising the at least one dopant element which is a halogen. The composition is a solution comprising a zinc compound, a silicon compound, and a solvent. The zinc compound is zinc acetate silicon compound is silicon tetra-acetate. The concentration of the zinc compound in the solution is from 0.01 M to 0.5 M. The concentration of the silicon compound in the solution is from 0.0001 M and 0.005 M; the concentration of the zinc compound in the solution is from 0.05 M to 0.1 M; and the concentration of the silicon compound in the solution is from 0.001 M and 0.002 M. Solvent comprises water and/or an alcohol. The solution further comprises an acid. The process also comprises annealing the substrate. The substrate is annealed at a temperature of from 200 degrees C to 500 degrees C. Annealing the substrate is performed in a nitrogen atmosphere, or in a mixture of an inert gas and hydrogen. The substrate is transparent in the visible range of the spectrum. The comprises glass, silicon, oxidized silicon, a polymer, a plastic, sapphire, silicon carbide, alumina (A12O3), zinc oxide (ZnO), yttrium-stabilized zirconium (YSZ), zirconium oxide (ZrO2), fused silica or quartz. The composition is disposed on only a portion of the surface of the substrate, in order to form a patterned film. The process further comprises subjecting the film to etching, thus producing a patterned film. Preferred Film: The film covers a surface area equal to or greater than 0.05 m2. It comprises one or more uneven regions and/or one or more curved regions. The transparent conducting film has a resistivity, p, of less than or equal to 6.0x10-3 ohm-cm. It has a carrier concentration of at least 1.0x1020 cm-3. It has a mean optical transparency in the visible range of the spectrum of greater than or equal to about 75%. The transparent conducting film has a two- or three-dimensionally patterned structure. Preferred Substrate: In coated substrate, the area of the surface which is coated with the film is equal to or greater than 0.05 m2. The surface which is coated with the film comprises one or more uneven regions and/or one or more curved regions. Preferred Coating: The transparent conducting coating is an antistatic coating, an optical coating, a heat-reflecting coating, an antireflection coating, an electromagnetic interference shield, a radio-frequency interference shield, an electrowetting coating, or a coating for a display, for a touch panel or for a sensor. Preferred Definitions:    x=0.015-0.035;    y=0 or other than 0, preferably greater than 0 and less than or equal to 0.1;    (X)=F; and    (M)=Si.    EXAMPLE - No suitable example given.