TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The energy beam irradiation process is a process of forming electroconductive oxide fine particle layer by energy beam irradiation in pattern shape. The coating film is heated at 600 degrees C or less, preferably 300 degrees C or less in neutral atmosphere or reducing atmosphere after the energy beam irradiation process. The energy beam irradiation is irradiation of ultraviolet ray in the wavelength of 200 nm or less using low pressure mercury vapor lamp, amalgam lamp or excimer lamp. The coating liquid is coated on the substrate by inkjet printing method, screen printing method, gravure method, offset printing method, spray coating method, flexographic printing method, dispenser printing method, slit coat method, die coat method, doctor blade coat method, wire bar-coat method, spin coat method or dip coat method. Preferred Compounds: The dopant metallic compound is tin oxide, titanium oxide, germanium oxide, zinc oxide, tungsten oxide, tantalum oxide, zirconium oxide, niobium oxide, hafnium oxide and/or vanadium oxide. The neutral atmosphere contains nitrogen gas and/or inert gas and the reducing atmosphere contains hydrogen gas and/or organic solvent vapor in hydrogen gas or neutral atmosphere. The heating in oxygen-containing atmosphere is performed at 100-250 degrees C. The oxygen-containing atmosphere has dew point of less than -30 degrees C.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The molar ratio of the organo metallic compound and organo metallic compound for dopant is 99.9:0.1-66.7:33.3. The organo metallic compound is organic indium compound and the organo metallic compound for dopant is organo tin compound, organo titanium compound, organo germanium compound, organo zinc compound, organo tungsten compound, organo zirconium compound, organo tantalum compound, organo niobium compound, organo hafnium compound and/or organo vanadium compound, or the organo metallic compound is organo tin compound and the organo metallic compound for dopant is organo indium compound, organo antimony compound and/or organo phosphorus compound, or the organo metallic compound is organo zinc compound and the organo metallic compound for dopant is organo aluminum compound, organo indium compound and/or organo gallium compound. The organo indium compound is acetyl acetone indium.