NOVELTY - The method involves spraying aqueous application solution containing silicon oxide or chloride precursor on a semiconductor substrate. A dopant-containing silicon oxide layer is formed on a semiconductor layer. The dopant-containing silicon oxide layer is heat-treated with a dopant precursor in nitriding atmosphere. An emitter layer is formed with diffusion of dopant through p-n junction formation. A silicon nitride layer and a silicon oxide layer are formed on the semiconductor substrate. Surface texturing effect acting on a silicon nitride reflection barrier layer is provided.    USE - Method for manufacturing a silicon nitride anti-reflection coating layer of a silicon solar cell (claimed).    ADVANTAGE - The method enables performing conversion efficiency enhancement and protective film passivation function, so that short-circuit current density of the silicon nitride reflection barrier layer is improved, and surface reflection ratio of the silicon solar cell is reduced. The method enables forming the silicon nitride reflection barrier layer with single process through p-n junction and texturing effect without utilizing an expensive vacuum equipment, so that the manufacturing process can be simplified, and initial amount invested and manufacturing cost can be reduced by avoiding utilization of expensive large size vacuum system, thus reducing process cost, and realizing practicability of the silicon solar cell. The method enables achieving better reflectivity.    DETAILED DESCRIPTION - The semiconductor substrate is a p type silicon board and the emitter layer is an N-type doped layer phosphorus. The dopant is an n-type dopant. The n-type dopant is selected from one of phosphorus, arsenic and antimony. The dopant precursor is selected from one of phosphorus containing compound, arsenic containing compound and antimony containing compound. An INDEPENDENT CLAIM is also included for a silicon solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a method for manufacturing a silicon nitride anti-reflection coating layer.