TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The weight ratio of silicon is approximately 8-16 wt.%. The vapor transport gas contains chlorosilane, and metal silicon alloy contains copper as metal. The input gas comprises hydrogen chloride and/or hydrogen. The copper silicon alloy is metallurgical grade silicon. The metal of metal silicon alloy is copper, nickel, iron, silver, platinum, palladium or chromium. The copper silicon alloy comprises 1-16 wt.%, preferably 10-16 wt.% of silicon. The copper silicon alloy material is at controlled alloy material temperature, which is between minimum diffusion threshold temperature and melting point temperature of the copper silicon alloy material. The controlled alloy material temperature is more preferably 300-500 degrees C. Preferred Method: A silicon concentration gradient is produced between the exterior surface and interior surface of metal silicon alloy material for facilitating atomic diffusion of silicon through metal silicon matrix to the exterior surface for consumption by the input gas. The presence of silicon crystallites in the metal silicon alloy material is less than defined crystallite threshold, which is property of hypo eutectic percent weight of silicon in the metal alloy. The metal silicon alloy material acts as a getter for defined impurity components present in the metal silicon alloy material. The filtering of impurity components facilitates the production of the purified silicon having resistivity that remains above minimum resistivity threshold throughout the deposited silicon thickness. The metal silicon alloy material has an affinity for oxidation below defined affinity threshold to facilitate the material retaining its structural integrity due to exposure of the material to oxidants. The individual formed pieces of chamber are uncrushed and positioned adjacent to one another in spaced apart relationship using a number of holders (17). The holders are physically separated from the individual formed pieces.