NOVELTY - A photovoltaic device comprises a substrate, first electrode disposed on the substrate, light absorbing layer that includes a reacted target physical deposition (RTPD) compound semiconductor thin-film; and second electrode disposed over the light absorbing layer.    USE - As photovoltaic device (claimed) used for solar cell application.    ADVANTAGE - The thin-films fabricated in accordance with the RTPD method has improved compositional, chemical and structural uniformity in both profile and in area. As a consequence, properties which are dependent on uniformity are improved. Thermal and/or chemical post-deposition processes that are conventionally used to approach such uniformity are reduced or eliminated. Thus minimizes interactions between device layers. The photovoltaic device can be prepared by a simple process with reduced manufacturing costs. The use of the RTPD method allows processing the batch materials at higher temperatures than in conventional approaches. This facilitates better mixing and more complete reaction of the constituents. The method provides improved compositional control of the principal constituents by target composition. This can facilitate bandgap engineering without processing changes. The method allows improved doping of the thin-films through pre-doping of targets with, e.g. Na; provides more uniform films with fewer vacancies or other performance limiting defects; provides thinner films for reduced materials usage for cost reduction; provides films with reproducible compositions over larger areas; provides higher yield, throughput and low-cost manufacturing. The method is simple and eliminates of multi source deposition, monitoring and control and eliminates chemical (e.g. Selenization) and/or thermal post-processing steps.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a target for use in fabricating a thin-film comprising a reacted target physical deposition (RTPD) compound semiconductor material having a prescribed bandgap.