NOVELTY - The solar cell (5) has an n-type base layer (10) that overlies on a p-type emitter layer comprising aluminum and defines a p-n junction (25) at an interface (35) of the p-type emitter layer and n-type base layer. An n-type front surface field layer doped with phosphorus which overlies on the n-type base layer has one or more lightly doped regions (15), and one or more heavily doped regions (20) which form a selective front surface field. An antireflection layer which has a silicon nitride layer is formed over a passivating oxide layer.    USE - Back junction type solar cell with selective front surface field.    ADVANTAGE - The oxide layers reduces the surface recombination velocity and decreases the front surface field component of the reverse saturation current density by passivating dangling silicon bonds on the surfaces of the substrate, so that the overall efficiency of the solar cell is improved. The oxide layer is formed on the back surface of the n-type base layer to produce a high-quality, dielectric-passivated back surface. Additionally the problem of phosphosilicate glass removal and edge isolation is solved. Moreover the solar cell is provided with an n-type base layer that is immune to light induced degradation. Hence a back junction solar cell is produced in a single anneal step having a selective front surface field layer and passivating oxide layer with a preset potential cell efficiency, even with low-cost, but high-quality, screen-printed contacts. Furthermore, these improvements greatly reduce the amount of time, equipment and expense needed to produce the solar cell, and greatly increase the throughput of the manufacturing process.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for forming a solar cell of the back junction type.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the back junction type solar cell.    Solar cell (5)    N-type base layer (10)    Heavily doped regions (15)    Lightly doped regions (20)    P-N junction (25)    Interface of p-type emitter layer and n-type base layer (35)