NOVELTY - Electrodeposition solution is formed using solute, copper salt, indium salt, selenium salt, auxiliary electrolyte and sodium citrate. The obtained solution is added in electrodeposition container, and electrodeposition is performed. Thin film is electrodeposited. The thin film is vulcanized using hydrogen sulfide gas, or selenized using selenium powder. Thus, copper indium selenium sulfide thin film is manufactured.    USE - Manufacture of copper indium selenium sulfide thin film for solar energy battery.    ADVANTAGE - The copper indium selenium sulfide thin film is easily manufactured.    DETAILED DESCRIPTION - Copper indium selenium sulfide (CuInSe2-xSx) thin film is deposited. Electrodeposition solution is formed using solute, copper salt, indium salt, selenium salt, auxiliary electrolyte and sodium citrate. The copper salt is chosen from copper chloride, copper sulfate or cupric acetate. The indium salt is chosen from indium chloride or indium sulfate. The selenium salt is selenic acid or selenium dioxide. The auxiliary electrolyte is lithium chloride or lithium sulfate. The atomic ratio of copper, indium, selenium and sulfur is 1:3-4.5:0-4:0-20. The solvent is deionized water. The copper ion density is 2-3 mM. The auxiliary electrolyte density is 0-0.25 M. The density of sodium citrate is 0-0.25 M. The obtained solution is added in electro-deposition container, and electrodeposition is performed using standard three-electrode system in which counter electrode is platinum sheet or platinized and titanized anode, reference electrode is saturated calomel electrode or silver/silver chloride electrode, and working electrode is indium tin oxide glass or platinized MO glass copper foil. Thin film is electrodeposited. The thin film is vulcanized in vulcanizing furnace at 500-570 degrees C with hydrogen sulfide gas as sulfur source, air in the furnace is displaced by argon gas, and cooled to room temperature. The thin film is selenized in selenizing furnace with selenium powder as solid-state selenium source, two different heating sources are provided with thin film sample, air in the furnace is displaced by argon gas, selenium powder and thin film are heated at 220-280 degrees C and 500-570 degrees C, respectively, and naturally cooled. Thus, copper indium selenium sulfide thin film is manufactured.