NOVELTY - A copper-indium-gallium-selenium-sulfur alloy solar battery absorption layer is continuously prepared by preparing copper-indium-gallium alloy preformed membrane by intermediate frequency alternating magnetron sputtering on metal molybdenum back electrode to prepare copper-indium-gallium alloy preformed membrane, and carrying out preformed membrane selenizing and vulcanizing technique by using continuous selenizing and vulcanizing furnace to carry out selenylation and vulcanization of copper-indium-gallium alloy preformed membrane.    USE - Continuous preparation of copper-indium-gallium-selenium-sulfur alloy solar battery absorption layer for photovoltaic energy material.    ADVANTAGE - The method improves absorption of energy in solar spectrum and photo-translating efficiency of copper indium selenide solar battery.    DETAILED DESCRIPTION - A copper-indium-gallium-selenium-sulfur alloy solar battery absorption layer is continuously prepared by preparing copper-indium-gallium alloy preformed membrane by intermediate frequency alternating magnetron sputtering on metal molybdenum back electrode to prepare copper-indium-gallium alloy preformed membrane; and carrying out preformed membrane selenizing and vulcanizing technique by using continuous selenizing and vulcanizing furnace to carry out selenylation and vulcanization of copper-indium-gallium alloy preformed membrane and making copper-indium-gallium alloy preformed membrane sequentially pass through preheating chamber, selenylation chamber, transition chamber, vulcanization chamber and cooling chamber of continuous selenizing and vulcanizing furnace to finish selenylation and vulcanization of copper-indium-gallium alloy preformed membrane and prepare copper-indium-gallium-selenium-sulfur alloy alloy/copper-indium-gallium-selenium alloy composite absorption layer. The selenium source is solid elemental selenium. The sulfur source is solid elemental sulfur. The carrier gas is high purity nitrogen or argon. The selenizing and vulcanizing technique is preformed at preheating temperature of 100-400 degrees C, preheating time of 10-40 minutes, selenizing temperature of 400-600 degrees C, selenizing time of 5-40 minutes, selenium source temperature of 300-600 degrees C, vulcanizing temperature of 300-500 degrees C, vulcanizing time of 1-30 minutes and sulfur source temperature of 300-500 degrees C.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the copper-indium-gallium-selenium-sulfur alloy solar battery absorption layer.