NOVELTY - The high efficiency copper-indium-gallium-diselenide/copper indium selenide based thin-film photovoltaic module comprises a substrate having a surface with a length of greater than or equal to 2 feet and a width of greater than or equal to 5 feet, stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width, first and second electric leads, a cover glass, and a national renewable energy laboratory (NREL) calibrated photovoltaic conversion efficiency of greater than or equal to 12-15%. Each cell comprises a barrier material overlying the surface.    USE - Used as a high efficiency copper-indium-gallium-diselenide/copper indium selenide based thin-film photovoltaic module.    ADVANTAGE - The high efficiency copper-indium-gallium-diselenide/copper indium selenide based thin-film photovoltaic module can be economically and easily manufactured with improved reliability, lifespan, opto-electrical properties and performance.    DETAILED DESCRIPTION - The high efficiency copper-indium-gallium-diselenide/copper indium selenide based thin-film photovoltaic module comprises a substrate having a surface with a length of greater than or equal to 2 feet and a width of greater than or equal to 5 feet, stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width, first and second electric leads, a cover glass, and a national renewable energy laboratory (NREL) calibrated photovoltaic conversion efficiency of greater than or equal to 12-15%. Each cell comprises: a barrier material overlying the surface; a first electrode overlying the barrier material; an absorber formed overlying the first electrode; a buffer material overlying the absorber; and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer. The absorber comprises a copper gallium indium diselenide compound material characterized by an energy band-gap of 1-1.1 eV. The buffer material combines the high resistivity transparent layer that comprises a photovoltaic window material for collecting photoelectrons converted by the photovoltaic absorber and the low resistivity transparent layer that forms a second electrode. The first and second electric leads are formed on the first electrode near each edge region of the substrate along the length. The substrate comprises a material consisting of soda-lime glass, an acrylic glass, a sugar glass, a specialty Corning glass, a quartz, and a plastic. The photovoltaic absorber is formed by a thermal selenization and sulfurization process to treat a precursor comprising sodium bearing material, copper-gallium alloy material and indium material in a gaseous environment including selenium and sulfur species. The photovoltaic absorber comprises a chalcopyrite structure having an average grain size of 0.75 mu m, a copper/(mixture of indium and gallium) (Cu/(In+Ga)) composition ratio of 0.9, and a n-type semiconducting characteristic. The buffer material comprises a cadmium sulfide layer. The photovoltaic window material comprises a pyramid-like texture with a feature size of 0.2 microns, and a p-type semiconducting characteristic formed using a metal-organic chemical vapor deposition process. The second electrode comprises a resistivity of 1 m Omega .cm, a surface characteristic of a pyramid-like texture having a feature size of 0.2 microns, and an optical transmission of 90% for wavelengths of 630-750 nm formed using a metal-organic chemical vapor deposition process. The high resistivity transparent layer overlying the buffer material comprises a resistivity of 102 to 104 m Omega .cm causing a formation of an ohmic contact between the photovoltaic window material and the second electrode. Each of the stripe shaped photovoltaic cells comprises a photovoltaic conversion area having a lateral dimension of 6.1 mm and a length that is equal to the length of the substrate. Each of the first electric lead and the second electric lead comprises a copper bus bar soldered on an indium-silver alloy contact coupled overlying the first electrode. The cover glass is coupled to the second electrode via a coupling material. An INDEPENDENT CLAIM is included for a method for manufacturing a high efficiency thin-film photovoltaic module.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic top view of a laminated sample copper-indium-gallium-diselenide photovoltaic module.