TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The substrate is arranged inside the vacuum chamber. Copper precursor is supplied into the vacuum chamber. Unreacted materials and byproducts are purged from the chamber. Indium precursor is supplied into the chamber. Unreacted materials and byproducts are purged from the chamber. Gallium precursor is supplied into the chamber. Unreacted materials and byproducts are purged from the chamber. Selenium precursor is supplied into the chamber. Unreacted materials and byproducts are purged from the chamber. Thus, thin film is formed. The precursors are supplied in vaporized state for 0.1-200 seconds. Argon gas is injected at flow rate of 1 sccm to 1000 slm for 0.1-200 seconds. A carrier gas chosen from argon gas, helium gas or nitrogen gas is supplied along with the precursor. The pressure maintained at vacuum chamber is 0.01 mTorr to atmospheric pressure. The copper precursor, indium precursor or gallium precursor is supplied at -40 degrees C to 200 degrees C, preferably -60 degrees C to 200 degrees C, and supply line temperature is maintained from room temperature to 400 degrees C. The temperature of substrate is maintained at room temperature to 600 degrees C.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The copper precursor has structural of formula: XCuL or CUX2.X= beta -diketonate, dialkyl amidinate, dialkylamino alkoxide, alkoxy alkoxide or (alkyl)cyclopentadienyl;andL=alkene, alkyne, cyclo(di)alkene, trialkylalkyl phosphine, trialkylphosphate, or 5-12C alkylsilyl alkene.The copper precursor is chosen from bis(acetylacetonato)copper, bis(2,2,6,6-tetramethylheptandionato)copper, bis(hexafluoroacetylacetonato)copper, (hexafluoroacetylacetonato)copper(vinyltrimethylsilane), (acetylacetonato)copper(vinyltrimethylsilane), (2,2,6,6-tetramethylheptandionato)copper(vinyltrimethylsilane), (acetylacetonato)copper(vinyltriethylsilane), (2,2,6,6-teramethylheptandionato)copper(vinyltriethylsilane), (hexafluoroacetylacetonato)copper(vinyltriethylsilane), (hexafluoroacetylacetonato)copper(1,5-cyclooctadiene), (hexafluoroacetylacetonato)copper(1,5-dimethylcyclooctadiene), (hexafluoroacetylacetonato)copper(3,3-dimethylbutene), (hexafluoroacetylacetonato)copper(trimethylphosphite), (hexafluoroacetylacetonato)copper(trimethylphosphine), (hexafluoroacetylacetonato)copper(1,3-cyclohexadiene), copper bis(dimethylaminomethylbutoxide), copper bis(ethylmethylaminomethylbutoxide), copper bis(diethylaminomethylbutoxide), copper bis(dimethylaminomethylpropoxide), copper bis(ethylmethylaminomethylpropoxide), and copper bis(diethylaminomethylpropoxide). The indium precursor is of formula: InR1R2R3:Ln. The gallium precursor is of formula: GaR1R2R3:Ln. The selenium precursor is of formula: R1-Se-R2 or R1-Se-Se-R2.R1-R3=alkyl, alkylamino, alkoxy alkyl, aminoalkoxy, alkoxyamino, 1-4C alkoxy or halo;adjacent R1-R3=branched chain or ring;L=neutral Lewis base ligand, preferably of formula: Ra-N(CRxRy)z, more preferably of formula (a)-(d);n=0-2;Ra=H, methyl, ethyl, secondary propyl, secondary butyl, or tertiary butyl;Rx,Ry=H, methyl, ethyl, secondary propyl, secondary butyl, or tertiary butyl;andz=2-5.The indium precursor is chosen from trimethylindium, triethylindium, triisopropylindium, tributylindium, tritertiarybutylindium, triethoxyindium, triethoxyindium, triisopropoxyindium, dimethylisopropoxyindium, diethylisopropoxyindium, dimethylethylindium, diethylmethylindium, dimethylisopropylindium, diethylisopropylindium, dimethyltertiarybutylindium or their mixture. The gallium precursor is chosen from trimethylgallium, triethylgallium, triisopropylgallium, tributylgallium, tritertiarybutylgallium, triethoxygallium, triethoxygallium, triisopropoxygallium, dimethylisopropoxygallium, diethylisopropoxygallium, dimethylethylgallium, diethylmethylgallium, dimethylisopropylgallium, diethylisopropylgallium, dimethyltertiarybutylgallium or their mixture. The selenium precursor is chosen from dimethylselenide, diethylselenide, diisopropylselenide, ditertiarybutylselenide, dimethyldiselenide, diethylselenide, diisopropyldiselenide, ditertiarybutyldiselenide, tertiarybutylisopropylselenide, tertiarybutylselenol or their mixture.