TECHNOLOGY FOCUS - POLYMERS - Preferred Method: A seed layer is produced during the production of the output layer, and the seed layer is formed on the columnar crystal structure. The seed layer is deposited in situ, made up of the same material as the rest of the output layer. Preferred Components: The crystallites (5) of the columnar crystal structure exhibit a lateral extent of more than 13%, preferably 17-19% of the layer thickness. A haze value of 500-1100 nm is generated through the modified layer deposition of the output layer, and the function of the etching time exhibits an increasing function between a first time (T0) and a second time (T1), where T0 corresponds to greater than 0 and T1, after which the first layer thickness is adjusted lower to the second layer thickness. The first layer thickness is more than 1200 nm. The first layer thickness is 1000-1200 nm, and the second layer thickness less than or equal to 500 nm. The function of the haze value is adjusted as a continuously increasing function. The variation of the process parameter is made from at least one of the parameters including sputtering pressure, reactive gas content, sputtering performance, metal doping or substrate temperature. Zinc oxide is deposited as a main component of the output layer. The lateral extent of the crystallites is 170-200 nm. The layer is deposited as a mixed layer of a zinc oxide component and a metal component. The metal component is made up of an aluminum component or gallium component. The layer of a target consisting of the zinc oxide component and a metal oxide component, preferably aluminum oxide- or gallium oxide component is deposited. The layer with a doping concentration that corresponds 0.2-5 wt.% of the metal oxide concentration is deposited over the target. The etching step is carried out for 50-200 seconds. The function is adjusted in such a manner that the haze value is greater than 30% at 700 nm after the etching for 50 seconds. EXAMPLE - No suitable example given.