NOVELTY - The method involves providing a temporary carrier. A heat spreader (134) is formed over the temporary carrier. A semiconductor die (122) is mounted to the heat spreader. A polymer layer (142) is formed over the semiconductor die and heat spreader. A conductive layer (146) connected to the heat spreader and a contact pads (138) on the semiconductor die, is formed over the polymer layer. A polymer layer (148) is formed over the conductive layer. A conductive layer (152) electrically connected to the conductive layer (146), is formed over the polymer layer (148).    USE - Method of making semiconductor device (claimed) such as microcontroller and microprocessor used in electronic device such as graphic card, network interface card and signal processing card inserted into computer. Uses include but are not limited to make charged-coupled devices (CCDs), solar cell and digital micro-mirror device used in entertainment, communication, power conversion, network, computer, military, aviation, automotive, industries and business fields.    ADVANTAGE - The need of the molding process is eliminated by forming polymer layer around semiconductor die. The manufacturing cost of the device is reduced which results in a lower cost for consumers. The moisture and the particles entering the package and the contamination die are prevented for environment protections. The necessary electrical functions can be performed by acquiring multiple IPDs in semiconductor packages. The signal propagation distance and the lower capacitance can be reduced by providing short electrical connection path to improve the overall circuit performance. The electrical performance of the semiconductor die is good with the higher operating speed.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the wafer level chip scale packages.    Semiconductor die (122)    Heat spreader (134)    Contact pads (138)    Polymer layer (142,148)    Conductive layer (146,152)