TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Composition: The photoelectric transducer further has an amorphous aluminum-iron-silicon complex oxide (AlxFeySizOw) layer (350), a transparent electrode layer (500), an insulator electron-blocking layer to suppress back-diffusion of photo-generated electrons into layer (500) and a thin-insulator electron-blocking layer, where w and z are not defined. The atomic ratio of silicon and iron in the layer (400) is 2 or less. The content of aluminum in the layer (400) is 4-25 atomic%. The layer (400) is a semiconductor with a bandgap of 0.8-1 eV, and has an orthorhombic crystal structure beta -phase having aluminum content of less than 7 atomic%, and a tetragonal crystal structure alpha -phase including aluminum content of 7-25 atomic%. The insulator electron-blocking layer contains germanium nitride, germanium oxynitride or molybdenum trioxide. The substrate is n-silicon substrate (single crystalline, multi-crystalline, polycrystalline or amorphous), non-silicon substrate or non-silicon substrate coated with n-silicon layer, preferably non-silicon substrate or non-silicon substrate coated with n-silicon layer. The non-silicon substrate is glass substrate or stainless steel substrate. The layer (300) is deposited by co-sputtering iron disilicide and pure aluminum targets. The thin-insulator electron-blocking layer comprises germanium or molybdenum. Preferred Properties: The layer (400) has thickness of 30-150 nm. The layers (300, 350, 400, 500) have thickness of 30-150 nm, 1-3 nm, 500-1000 nm and 100-500 nm, respectively. The photoelectric transducer has conversion efficiency of 2.5% or less or 3.3 % or less. The insulator electron-blocking layer has thickness of 1-20 nm. The thickness of layer (200) is less than 40% than thickness of iron disilicide-aluminum layer. Preferred Process: The thin-insulator electron-blocking layer is formed by reactive sputtering of pure germanium target or pure molybdenum target under argon and nitrogen mixed working gas ambient atmosphere or sputtering germanium nitride target or molybdenum trioxide target.