NOVELTY - A low-iron float glass is used as glass substrate and a transparent conductive oxide is formed. A P-layer is formed using trimethylboron, silane, methane and hydrogen. An I-layer is formed using silane and hydrogen. An N-layer is formed using phosphine, silane and hydrogen. A PIN cell membrane layer is formed by laser etching, and a cell back electrode is formed by magnetron sputtering. A high-strength hot-melt adhesive material is used and the prepared solar cell and a steel back plate glass are laminated and pressed to obtain a thin-film solar cell.    USE - Manufacture of thin-film solar cell.    ADVANTAGE - The method economically provides thin-film solar cells having excellent light transmittance, photoelectric conversion efficiency, quality, and safety.    DETAILED DESCRIPTION - A low-iron float glass having a thickness of 0.4-1 mm, a light transmission rate of 95-99%, and high strength is used as glass substrate. Low-pressure chemical vapor deposition or sputtering is used and a transparent conductive oxide is formed on the glass substrate with a thickness of 500-700 nm, a resistance value of less than 15 Omega /square, and a light transmittance of more than 90% with respect to light of wavelength 400-800 nm. The glass substrate is then subjected to laser etching. A P-layer is formed using trimethylboron, silane, methane and hydrogen at a deposition temperature of 180-210 degrees C, power density of 0.2-0.35 W/cm2, a hydrogen dilution ratio of 23-35, a silane/methane flow ratio of 10:(1-1.35), and a deposition pressure of 100-140 Pa. An I-layer is formed using silane and hydrogen in a ratio of 19-21, a deposition temperature of 180-220 degrees C, a power density of 0.29-0.55 W/cm2, and a deposition pressure of 110-155 Pa. An N-layer is formed using phosphine, silane and hydrogen, a hydrogen/silane ratio of 21-32, a deposition temperature of 180-210 degrees C, a power density of 0.25-0.45 W/cm2, and a deposition pressure of 110-150 Pa. A PIN cell membrane layer is formed by laser etching, and a cell back electrode is formed by magnetron sputtering. The cell back electrode comprises antimony-doped zinc oxide film layer, an aluminum layer, and a nickel-vanadium film layer. The zinc oxide film layer thickness is 80-100 nm and the square resistance is less than 280 Omega /square. The aluminum film layer thickness is 250-300 nm, and the nickel-vanadium film layer thickness is 80-110 nm. A high-strength hot-melt adhesive material is used and the prepared solar cell and 4-mm-thick steel back plate glass are laminated, passed through a roller, detected, and packaged as a thin-film solar cell.