NOVELTY - Thick film composition comprises (a) inorganic component containing inorganic powder having at least one of Ib group element powder chosen from copper, copper oxide, silver and silver oxide, and at least one of IIIb group element powder chosen from indium oxide and gallium oxide, and (b) organic component containing organic resin and organic solvent having boiling point of 180-350 degrees C.    USE - The thick film composition is useful for forming chalcopyrite film (claimed) which is used as light absorption film of copper indium selenide (CIS) type solar cell.    ADVANTAGE - The thick film composition is cost-effective and has excellent printability.    DETAILED DESCRIPTION - Thick film composition comprises (a) inorganic component containing inorganic powder having at least one of Ib group element powder chosen from copper, copper oxide, silver and silver oxide, and at least one of IIIb group element powder chosen from indium oxide and gallium oxide, and (b) organic component containing organic resin and organic solvent having boiling point of 180-350 degrees C. The inorganic component has average particle diameter of 0.1-10 mu m. The composition has viscosity of 10-190 Pa.second. The viscosity is measured at rotational speed of 10 revolutions per minute and ambient temperature of 25 plus minus 2 degrees C. The viscosity is measured by using rotational viscometer HBT type by Brookfield company, SC4-6 as container into which the thick film composition is added and SC4-14 as a rotor. An INDEPENDENT CLAIM is included for method for manufacturing chalcopyrite film, which involves coating the above-cited thick film composition on lower electrode formed on substrate, drying the coated surface at 100-300 degrees C, heating the dried surface at 300-650 degrees C in reducing atmosphere, removing organic solvent and organic resin in the thick film composition, forming precursor film containing alloy of Ib group element and IIIb group element and combining Ib group element, IIIb group element and VIb group element in the precursor film.