NOVELTY - The device has a silicon substrate (10) containing an integrated circuit (IC) including a drain on a backside of the substrate. A backmetal layer is placed on the backside of the substrate. Isolated standoff structures (70) are placed on the backmetal layer. The standoff structures include a thickness ranging from about 0.1 to about 100 micro m. Stannum-containing layer (75) covers the standoff structures and the backmetal layer. A leadframe (90) is connected to the stannum-containing layer. The leadframe contains a die attach pad with a pattern of indentations.    USE - Semiconductor device for use in an IC device e.g. linear regulator, audio power amplifier, low drop regulator, driver IC, diode e.g. zener diode, schottky diode, small signal diode, and transistors e.g. bipolar junction transistor, MOSFET, insulated-gate-bipolar transistors, and insulated-gate field-effect transistors, in an electronic apparatus e.g. portable computer, disk drive, universal serial bus (USB) controller, and portable audio device. Can also be used for solar cell, micro electro mechanical system structure, lighting control, power supply, and amplifier.    ADVANTAGE - The standoff structures can be isolated from each other so that the structures are not connected and can be arranged to mirror indentations in the leadframe that is attached to the stannum-containing layer, such that the device can be manufactured with a small size and without the need to use led. The device includes an oxidation prevention layer formed to prevent a soldering layer from being oxidized during subsequent processing. The standoff structures are located between the die attach solder layer and the die backmetal layer in desired pattern so as to provide the best package reliability for temperature cycling and power cycling performance. The stand-off structures can be arranged to mirror the indentations in the die attach paddle of the leadframe, thus creating an interlocking mechanism to reduce or prevent rotation of the die relative to the lead- frame. The stand-off structures can reduce or eliminate the drain-to-source shorting that can occur from die attach solder bleeds and solder splashing.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electronic apparatus comprising a printed circuit board.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating a method for forming a semiconductor device.    Gate layer (5)    Silicon substrate (10)    IC device (15)    Contact layer (20)    Soldering layer (25)    Oxidation prevention layer (30)    Isolated standoff structures (70)    Stannum-containing layer (75)    Leadframe (90)