NOVELTY - Producing monocrystalline semiconductor material (104), preferably monocrystalline silicon, comprises: providing a starting material made of semiconductor material; transferring the starting material into a heating zone, in which the starting material is fed into a melt made of the semiconductor material; and sinking the melt into the heating zone and/or lifting the heating zone, so that a solidification front is formed at the lower end of the melt, along which the semiconductor substance crystallizes in desired structure.    USE - The monocrystalline semiconductor material, preferably monocrystalline silicon is useful in photovoltaics, preferably solar cells and in microelectronics industry, preferably semiconductors and computer chips.    ADVANTAGE - The method exhibits simplified process flow and improved energy optimization when compared with the conventional methods.    DETAILED DESCRIPTION - Producing monocrystalline semiconductor material (104), preferably monocrystalline silicon, comprises: providing a starting material made of semiconductor material; transferring the starting material into a heating zone, in which the starting material is fed into a melt made of the semiconductor material; and sinking the melt into the heating zone and/or lifting the heating zone, so that a solidification front is formed at the lower end of the melt, along which the semiconductor substance crystallizes in desired structure. The starting material is prepared from the semiconductor material in liquid form and is fed into the melt in the liquid state. An INDEPENDENT CLAIM is also included for an arrangement (100) for producing the monocrystalline semiconductor material, preferably monocrystalline silicon, comprising a source for a liquid semiconductor material serving as the starting material, a heating medium for producing and/or adjusting a melt made of the semiconductor material, and a device for controlled feeding of the liquid semiconductor material serving as the starting material, into the melt.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the arrangement for producing the monocrystalline semiconductor material.    Arrangement (100)    Reactor container (101)    Reactor inner wall (102)    Semiconductor material (104)    Top layer (106)