TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The film-manufacturing method is a sol-gel spin coating method, a metal-organic chemical vapor deposition method or sputtering method. The sol-gel spin coating method comprises: mixing an indium precursor and a tin precursor and then an yttrium ion precursor and a europium ion precursor to form a sol-gel solution having tin-doped indium oxide, yttrium ions and europium ions; and coating with the sol-gel solution and undergoing heat processing to obtain a tin-doped indium oxide thin film. The step of heat processing is carried out at 400 degrees C. The method comprises: mixing acetic acid and 2-methoxyethanol to obtain a mixture solution; adding indium nitrate as an indium ion precursor to the mixture solution and ultrasonically shaking the mixture solution allowing the indium nitrate to be completely solved in the mixture solution; mixing tin tetrachloride, as a tin precursor and absolute ethyl alcohol to obtain a mixture and adding the mixture to the mixture solution, where the molar ratio of tin and indium is 90:10; adding yttrium nitrate, as an yttrium precursor, and europium nitrate, as a europium precursor, to the mixture solution and stirring for 10 hours at room temperature to obtain a sol-gel solution comprising tin-doped indium oxide, yttrium ions and europium ions; evenly distributing the sol-gel solution onto a glass basal plate and performing a first spin coating at 1000 revolutions per minute for 10 seconds followed by a second spin coating at 4000 revolutions per minute for 30 seconds to obtain a coating layer; and drying the coating layer by soft baking at 200 degrees C, raising temperature of a tubular furnace by 5 degrees C per minute to 400 degrees C, inserting a furnace tube for 30 minutes and holding the temperature for 10 minutes and then removing the furnace tube for 20 minutes to remove organic residues and obtaining a tin-doped indium oxide thin film. Preferred Components: The yttrium ions are proportional to 0.5-4 mol % of the tin-doped indium oxide and the europium ions are proportional to 0.05-5 mol % of the tin-doped indium oxide. The europium ion precursor is europium nitrate, europium carbonate, europium chloride, europium oxalate, europium acetate or europium isopropoxide. The yttrium ion precursor is yttrium nitrate, yttrium carbonate, yttrium chloride, yttrium acetate, yttrium oxalate or yttrium isopropoxide. The indium precursor is indium nitrate, indium chloride, indium ethoxide, indium isopropoxide or indium butoxide. The tin precursor is tin chloride, tin ethoxide, tin isopropoxide or tin butoxide.