NOVELTY - The method for cleaning a surface of a component arranged in an inner region of a process chamber (3) by impacting with a cleaning gas, which comprises fluorine gas, where the process chamber has an electrode (4) and a counter-electrode (5) for producing plasma for the plasma treatment such as chemical vapor deposition or plasma-enhanced chemical vapor deposition treatment of flat substrate (2) with a surface of over 1 m2, comprises subjecting the component to be cleaned or the inner region with fluorine gas or gaseous fluorine compounds with entire partial pressure of greater than 5 mbar.    USE - Method for cleaning a surface of a component arranged in an inner region of a process chamber by impacting with a cleaning gas, where the component is useful for electronic and optoelectronic applications such as semiconductor devices or solar cells.    ADVANTAGE - The method is capable of effectively and easily cleaning the surface of the component with high quality.    DETAILED DESCRIPTION - The method for cleaning a surface of a component arranged in an inner region of a process chamber (3) by impacting with a cleaning gas, which comprises fluorine gas, where the process chamber has an electrode (4) and a counter-electrode (5) for producing a plasma for the plasma treatment such as chemical vapor deposition or plasma-enhanced chemical vapor deposition treatment of flat substrate (2) with a surface of over 1 m2, comprises subjecting the component to be cleaned or the inner region with fluorine gas or gaseous fluorine compounds with an entire partial pressure of greater than 5 mbar and/or thermally activating the fluorine gas or gaseous fluorine compounds, and tempering the component to be cleaned at a temperature of less than 350 degrees C. The substrate is coated with a layer containing silicon or silicon-containing compounds using the plasma treatment before subjecting with the cleaning gas and a residue containing silicon or silicon-containing compounds is formed on the component to be cleaned. The substrate is etched using the plasma treatment before subjecting with the cleaning gas. A partial area of the electrode, the counter electrode, a gas distributor arranged to the electrode, a substrate-bearing surface arranged to the counter electrode or a tank wall surface of the process chamber is selected as the surface to be cleaned and/or during subjecting with the cleaning gas, the surface to be cleaned has a temperature of less than 20 degrees C, which is 1.8 times the temperature of the surface during the plasma treatment. The method further comprises preventing the formation of the residues on a surface area of the electrode, the counter electrode, gas distributor, substrate-bearing surface and/or tank wall surface of the process chamber by constructive-mechanical or constructive-electrical covering agent, and covering the surface, so that the formation of the residues on the substrate is prevented during the plasma treatment. Partial surfaces of a holding unit are selected as the surface to be cleaned, where the holding unit is arranged to the substrate-bearing surface. Parts of the electrode and/or gas distributor arranged to the one of the electrodes are used as unit for thermal activation of the fluorine gas and/or the gaseous fluorine compounds. Parts of the counter electrode and/or substrate-bearing surface arranged to the one of the counter electrodes are used as unit for thermal activation of the fluorine gas and/or the gaseous fluorine compounds. Nitrogen or argon is used in the cleaning glass in addition to the fluorine gas. A plasma stimulation of the cleaning gases takes place inside and/or outside of the process chamber and/or thermal activation takes place outside of the process chamber. During the subjection with the cleaning gas, a distance between a gas exit plate of the gas distributor arranged to the electrode and the substrate-bearing surface arranged to the counter electrode is adjusted to 2-100 mm. An INDEPENDENT CLAIM is included for a process chamber.    DESCRIPTION OF DRAWING(S) - The diagram shows a longitudinal view of a device to be cleaned for plasma treatment of a substrate.    Reactor (1)    Substrate (2)    Process chamber (3)    Electrode (4)    Counter electrode. (5)