NOVELTY - Making current tracks for semiconductors involves providing semiconductor comprising front side and back side, where front side comprises a layer that is antireflective layer composed of silicon oxide/silicon nitride or doped emitter layer; selectively applying hot melt ink resist comprising hydrogenated rosin resins having acid functional groups, and fatty acids to the layer, where hot melt ink resist has acid number of 190; and applying etch composition comprising inorganic acids to semiconductor to etch away exposed portions of layer and simultaneously inhibit undercutting.    USE - For making current tracks for semiconductors (claimed), e.g. photovoltaics and solar cells.    ADVANTAGE - The methods enable the formation current tracks on semiconductors which have reduced or no detectable undercutting in the antireflective layer or coated portions of the doped emitter layer. This enables metal current tracks to have uniform dimensions and provides a semiconductor device with uniform current flow and increased electrical out-put in contrast to many conventional semiconductor devices made with conventional methods. Short circuiting of adjacent current tracks due to interconnecting tributaries is reduced or eliminated. The method enables the formation of current tracks with fine line dimensions, thus increasing the current tracks on a semiconductor as well as enabling the formation of current tracks on smaller sized wafers. Further, by reducing the size of the current tracks undesirable shadowing is reduced or eliminated, thus reducing shadowing and enabling an increase in the absorption of incident light by the semiconductor device. The hot melt ink resist is of such a composition that it provides sufficient adhesion at an interface with the antireflective layer or emitter layer to inhibit seepage of the etchant under the hot melt ink resist due to capillary action. In addition, the hot melt ink resist can be readily and rapidly removed from the surface of the antireflective layer or doped emitter layer by dissolving rather than swelling and lifting using aqueous alkaline solutions without concern that any remaining residue may compromise metal plating or contaminate the final device. This permits easy waste treatment because the dissolved resist can be precipitated out by neutralization. This permits less periodic maintenance on equipment.