NOVELTY - The thermoelectric device comprises a flexible ceramic substrate and a layer arrangement, which is formed onto the substrate, where the layer arrangement comprises a flat bottom electrode, a flat top electrode, a flat p-doped area and a flat n-doped area, which are arranged next to each other between the bottom electrode and the top electrode and are alternatively switched in row, and a passivation structure, which is flatly formed between the adjacent p-doped and n-doped areas and is thermally insulated. The passivation structure has breakthroughs.    USE - Thermoelectric device useful as a temperature sensor, a thermoelectric cooler, a thermoelectric heater or a thermoelectric power generator (claimed) in silicon semiconductors.    ADVANTAGE - The thermoelectric device can be economically and efficiently manufactured with improved electrical properties and thermoelectric properties.    DETAILED DESCRIPTION - The thermoelectric device comprises a flexible ceramic substrate and a layer arrangement, which is formed onto the substrate, where the layer arrangement comprises a flat bottom electrode, a flat top electrode, a flat p-doped area and a flat n-doped area, which are arranged next to each other between the bottom electrode and the top electrode and are alternatively switched in row, and a passivation structure, which is flatly formed between the adjacent p-doped and n-doped areas and is thermally insulated. The passivation structure has breakthroughs and the flat p-doped and n-doped areas are formed in the breakthroughs. The substrate made of plates or films of the materials consisting of metal, aluminum, zinc, silicon or copper. The substrate comprises an electrically insulated layer, which is arranged between the substrate and the bottom electrode and is formed on the substrate at the side opposite to the bottom electrode. The bottom electrode is formed in the substrate. The passivation structure contains an organic material, polymer or flexible material as main material, and is made of photo-lacquer. The breakthroughs have one of the structures such as triangular, hexagonal, square, quadratic and circular. An INDEPENDENT CLAIM is included for a method for producing a thermoelectric device.    DESCRIPTION OF DRAWING(S) - The diagram shows a graph of an arrangement of the indium tin oxide electrodes.