NOVELTY - The photoelectrical element comprises a conductive substrate (202), a photoelectric conversion stacked-layer (204) formed on the substrate comprising a first semiconductor layer (207) formed on the substrate, a photoelectric conversion layer (208) formed on the first semiconductor layer and a second semiconductor layer formed on the photoelectric conversion layer, a conductive structure formed between the first semiconductor layer and the substrate or on the p-type second semiconductor layer, and a thermal-electrical structure (201) formed inside the conductive structure.    USE - Used as a photoelectrical element such as a light-emitting diode, a solar cell and a photo diode.    ADVANTAGE - The photoelectrical element exhibits improved current spreading, increased luminous efficiency and good heat dissipation characteristics.    DETAILED DESCRIPTION - The photoelectrical element comprises a conductive substrate (202), a photoelectric conversion stacked-layer (204) formed on the substrate comprising a first semiconductor layer (207) formed on the substrate, a photoelectric conversion layer (208) formed on the first semiconductor layer and a second semiconductor layer formed on the photoelectric conversion layer, a conductive structure formed between the first semiconductor layer and the substrate or on the p-type second semiconductor layer, and a thermal-electrical structure (201) formed inside the conductive structure. The conductive structure comprises a transparent conductive layer formed on the semiconductor layer, a metal pad formed on the transparent conductive layer, and a reflective layer (206) formed between the conductive substrate and the first semiconductor layer. The thermal-electrical structure is formed: inside the transparent conductive layer; between the transparent conductive layer and the second conductive layer; between the transparent conductive layer and the metal pad; inside the transparent conductive layer corresponding to the metal pad; and/or between the reflective layer and the conductive substrate. The polarity of the first semiconductor is p-type and the polarity of the thermal-electrical structure is n-type; the polarity of the first semiconductor is n-type and the polarity of the thermal-electrical structure is p-type; or the thermal-electrical structure comprises p-type thermal-electrical materials and n-type thermal-electrical materials formed in turn between the substrate and the reflective layer. The thermal-electrical structure comprises a nanoscaled thermal-electrical material.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a thermal-electrical photoelectrical element.    Thermal-electrical structure (201)    Substrate (202)    Photoelectric conversion stacked layer (204)    Reflective layer (206)    First semiconductor layer (207)    Photoelectric conversion layer. (208)