NOVELTY - The device (1) has a connecting plate that electrically connects the electrodes. A groove (23) is provided in a connection portion of connecting plate which is connected to the electrodes. The area of connecting plate outside the groove and the electrodes are connected by a conductive adhesive (9). The connecting plate is locked to the electrodes. A source lead (5) is located around the semiconductor chip (8).    USE - Semiconductor device such as MOSFET, insulated gate bipolar transistor and bipolar power transistor chip used in mobile device, laser beam printer and on-vehicle electronic device. Can also be used in battery charger for cellular phone, video camera and office automation (OA) equipment.    ADVANTAGE - The heat capacity of the connecting plate can be increased so as to improve the heat radiation performance for high output power. The thickness of the adhesive between the connecting plate and the semiconductor chip can be reduced, and the movement of connecting plate towards the source side can be prevented. The connection reliability can be improved and a highly reliable semiconductor device can be provided, since the thermal strain generated in the adhesive by heat at the time of temperature cyclic test and actual operation can be suppressed. The groove can sufficiently absorb the adhesive wetting and spreading. The heat capacity of the connecting plate and the heat radiation performance can be increased by decreasing the electrical on-resistance. The header having sufficient thickness can be manufactured even when the semiconductor chip and the external electrode are connected by a connecting plate. The thickness of the solder between the connecting plate and the semiconductor chip and between the semiconductor chip and the header can be acquired easily and accurately.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic sectional view of the semiconductor device.    Semiconductor device (1)    Source lead (5)    Semiconductor chip (8)    Conductive adhesive (9)    Groove (23)