NOVELTY - The device has a working electrode comprises of a magnetically-modified semiconductor electrode and a counter electrode. The onset of a hydrogen gas evolution for the device is measured at a current density of about 0.4 mA/cm2 occur at an over potential of -1200mV. The working electrode comprises of p-type silicon with a low doping level. The working electrode comprises of silane-coated magnetite, a polymeric material, platinum. The device comprises of gallium (Ga)-in eutectic or silver epoxy.    USE - Device for production of hydrogen gas for photo applications such as photoelectrosynthesis application, photoelectrocatalysis application, and photovoltaics application.    ADVANTAGE - The magnetic field on the semiconductor electrode surface can reduce the recombination rates and increase the interfacial electron transfer rate that leads to increased efficiency. The higher currents correspond to higher efficiency can be manifested in various electrochemical systems. The photoelectrosynthetic cells for hydrogen reduction can be thermodynamically feasible with p-type silicon semiconductors. Thus the recombination of generated and separated charges in and on the semiconductor can dramatically reduce the reaction efficiency, such that hydrogen evolution occurs at high over potential such as high energetic cost. The magnetic modification of p-type silicon semiconductor surfaces can enable the hydrogen production with little or less over potential and need not require the use of precious metals or catalysts that can be expensive and difficult to acquire. The basic supply of the reactants, the proton and the photo generated electrons of the basic mechanism or the catalytic sites are not affected by the magnetic particles. Thus the magnetic modification impacts the kinetic rates of the individual steps and the overall efficiency is increased.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of producing hydrogen gas.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating the relationship between light energy converting efficiency and applied potential for magnetically modified semiconductor electrode.