NOVELTY - The vertical nanotube device comprises a pressure-controlled vessel comprising a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material, a first material (20) concentrically disposed within the column, a second material (30) concentrically disposed within the column, a third material disposed between the first material and the second material, a first wiring structure operatively connected to an exposed end of the first material, and a second wiring structure.    USE - The vertical nanotube device is useful as an electrostatic capacitor, a battery, a supercapacitor, a solar cell, a light emitting diode and/or a laser (claimed), and in power management circuitry.    ADVANTAGE - The vertical nanotube device has improved power and energy density, low leakage current characteristics, high breakdown field and dielectric constant and increased surface area, and can be easily and economically manufactured with high flexibility and without additional manufacturing steps.    DETAILED DESCRIPTION - The vertical nanotube device comprises a pressure-controlled vessel comprising a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material, a first material (20) concentrically disposed within the column, a second material (30) concentrically disposed within the column, a third material disposed between the first material and the second material, a first wiring structure operatively connected to an exposed end of the first material, a second wiring structure operatively connected to an exposed end of the second material, a passivation layer (70) disposed on a surface between the anodic oxide material and the first material, a first conductive layer disposed between the anodic oxide material and the first material, a second conductive layer disposed on an outer surface of the second material, and a Schottky barrier. The pressure-controlled vessel is configured to allow a gas or liquid to flow through the columns and from a point of higher pressure to a point of lower pressure across the columns. The first material fills the first distal end of the column, and extends to the second distal end of the column along inner walls of the column. The second material fills the first distal end of the column, and extends to the second distal end of the column within the first material. The first material and the second material are exposed at the first and second distal ends of the column respectively, and are electrically conducting. The first and second wiring structures: are configured on a top surface and a bottom surface of the column respectively; comprise a metal material at a first temperature and a second temperature respectively; and are configured to measure a resistance change based on an adsorption, absorption or reaction of species from the gas or liquid on the material. The first temperature is greater than the second temperature. The third material comprises an electrical insulator and/or an electrolyte. One of the first material and the second material comprises an electron donating material, an n-type semiconductor material and a metal layer. Other of the first material and the second material comprises an electron accepting material, a p-type semiconductor material and a semiconductor material. The anodic oxide material comprises a rectangular patterned area disposed on the substrate. The columns are connected in parallel by the first and second wiring surface. The electrolyte comprises a solid, gel and/or polymer electrolyte. An INDEPENDENT CLAIM is included for a method for formation of a vertical nanotube device.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a two-terminal electrostatic capacitor nanodevice.    Nanopore (10)    First material (20)    Second material (30)    Dielectric layer (40)    First electrical contact (50)    Passivation layer. (70)