NOVELTY - A photoelectric conversion device comprises a first silicon semiconductor layer (340) having one conductivity type and formed over a substrate (300); a second silicon semiconductor layer comprising two regions (350a-b); and a third silicon semiconductor layer (360) having a conductivity type opposite to the one conductivity type and formed over the second silicon semiconductor layer. The first region is a crystal layer formed by a catalyst material, and the second region is an amorphous layer or a crystal layer formed by being crystallized without the catalyst material.    USE - A photoelectric conversion device, e.g. solar cell.    ADVANTAGE - The device can suppress defects such as a short circuit or leakage of current which are caused due to the catalyst material.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating a photoelectric conversion device comprising:    (A) forming a first silicon semiconductor layer containing an impurity imparting one conductivity type over a substrate;    (B) forming an amorphous silicon film as a second silicon semiconductor layer over the first silicon semiconductor layer;    (C) adding selectively a catalyst material which promotes crystallization of silicon to regions over a surface of the second silicon semiconductor layer;    (D) crystallizing part of the second silicon semiconductor layer by a heat treatment performed for the second silicon semiconductor layer;    (E) forming a third silicon semiconductor layer which contains an impurity imparting a conductivity type opposite to the one conductivity type over the second silicon semiconductor layer; and    (F) dividing a stacked layer comprising the first, the second, and the third silicon semiconductor layers at a region to which the catalyst material is not added.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a method for fabricating a multi-junction photoelectric conversion device.    Substrate (300)    Semiconductor layers (340, 360)    Regions (350a-b)    Interlayer (400)    Isolation groove (511)