NOVELTY - High-quality metal silicon with phosphorus content of less than 3 ppm and grain size of 1-3 cm, is selected, washed and dried. The metal silicon is uniformly loaded in crucible, crucible is mounted in a high-temperature refining furnace, and slowly heated. A gas replacement system is opened in the furnace. Fitting device for preparing polycrystalline silicon is declined, when stirring the device. The silicon liquid is made to form silicon liquid internal flowing through the tray micropore, and the phosphor in liquid is constantly evaporated. Polycrystalline silicon is manufactured.    USE - Manufacture of polycrystalline silicon for solar cell.    ADVANTAGE - The polycrystalline silicon is easily, efficiently and economically manufactured without affecting environment.    DETAILED DESCRIPTION - High-quality metal silicon with phosphorus content of less than 3 ppm and grain size of 1-3 cm, is selected, washed with deionized water and dried. The metal silicon is uniformly loaded in a crucible, the crucible filled with materials is mounted in a high-temperature refining furnace, the crucible is slowly heated till silicon is molten, and temperature is maintained at 1450-1550 degrees C. A gas replacement system is opened in the furnace and pressure in the furnace is maintained at negative pressure of 1000-3000 MPa. Fitting device for preparing polycrystalline silicon is declined by physical phosphorus removal to the silicon liquor, when stirring the device for preparing polycrystalline silicon. The silicon liquid is made to form silicon liquid internal flowing through the tray micropore since the silicon liquid has excellent fluidity, and the surface of the silicon liquid forms wave, the phosphor in the silicon liquid is constantly evaporated to replace the gas in the furnace and replace the phosphor. The operation is maintained for 3 hours, stirring is stopped, and directionally cooled in high pure inert gas environment to finish phosphorus removal to 0.7 ppm.