TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Process: The process (P1) involves applying the acceptor element-containing glass powder (H1) to the silicon substrate, optionally through n-type diffusion layer, and heat treatment to form a glass layer and p+-type diffusion layer beneath the glass layer; removing the damaged surface layer from a crystalline silicon substrate, etching the crystalline silicon substrate to form a textured front surface structure, forming n-type diffusion layer around the silicon substrate in a mixed gas atmosphere of phosphorus oxychloride, N and O and removing the n-type diffusion layer from the side faces by side etching, applying the acceptor element-containing glass powder (H1) to the n-type diffusion layer on the rear surface of the silicon substrate, and after optional drying to remove solvent present in the composition, heat treatment, preferable at 600-1200 degrees C to form a glass layer and p+-type diffusion layer beneath the glass layer, removing the glass layer by etching, farming an antireflective film over the n-type diffusion layer on the front surface, forming surface electrode on the antireflective film, forming rear surface electrode on the p+-type diffusion layer, and sintering to establish electrical connection between the surface electrode and the silicon substrate; and removing the damaged surface layer from a crystalline silicon substrate, etching the crystalline silicon substrate to form a textured surface structure, applying a composition comprising a donor-element containing glass powder and a dispersion medium on the textured front surface, applying the acceptor element-containing glass powder (H1) to the rear surface of the silicon substrate; optional drying to remove solvent present in the compositions applied to the surfaces of the silicon substrate, heat treatment, preferably at 600-1200 degrees C to form a glass layer and n-type diffusion layer beneath the glass layer on the front surface, and a glass layer and p+-type diffusion layer beneath the glass layer on the rear surface, removing the glass layers by etching, forming an antireflective film over the n-type diffusion layer on the front surface, forming surface electrode on the antireflective film, forming rear surface electrode on the p+-type diffusion layer on the rear surface, and sintering to establish electrical connection between the surface electrode and the silicon substrate.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Powder: The acceptor element-containing glass powder (H1) further comprises a dispersion medium (where the dispersion medium comprises a binder and a solvent). The acceptor element-containing glass powder contains at least one acceptor element-containing material selected from B2O3, Al2O3 and Ga2O3; and at least one glass component material selected from SiO2, K2O, Na2O, Li2O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, V2O5, SnO, ZrO2 and MoO3. Preferred Components: The acceptor element is at least one selected from B, Al and Ga.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent is an ester.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The binder is a cellulose derivative (preferably ethylcellulose). EXAMPLE - Ethylcellulose (0.5 g), TMX-404 (RTM: B2O3-SiO2-Na2O based glass powder) (20 g) and 2-(2-butoxyethoxy)ethyl acetate (10 g) were mixed with an automatic mortar kneading machine and made into a paste to obtain a composition for forming a p-type diffusion layer.