TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method further comprises forming a plate-resistant ink layer on all surfaces of the crystalline silicon wafer other than the top surface. After a bottom surface of the crystalline silicon wafer is coated with plate-resistant ink by using a roller, the plate-resistant ink layer is formed on a side surface by using a jetting method. The jetting method is performed inside a housing plate in which the side face of the crystalline silicon wafer having the plate-resistant ink layer formed on the bottom surface and a space in which ink flows are formed. A plate-resistant ink layer is formed on all the surfaces of the crystalline silicon wafer other than the top surface by immersing the crystalline silicon wafer in an ink housing plate in which ink is stored. A light-transmissive water-repellent layer is formed by using a fluorine series material before the forming of the conductive metal thin film on the crystalline silicon wafer. The light-transmissive water-repellent layer is formed by spray coating, brushing, dipping, evaporation coating, a dropping method, sputtering, spin coating, industrial inkjet printing, or roll-to-roll printing. The conductive metal thin film is formed by spray coating, brushing, dipping, evaporation coating, a dropping method, sputtering, spin coating, industrial inkjet printing, or roll to roll printing. A post treatment process of a thermal curing method, a UV curing method, a plasma treatment or a microwave treatment is performed on the conductive metal thin film after the forming of the conductive metal thin film. The plate-resistant partition walls are formed by spray coating, brushing, dipping, evaporation coating, a dropping method, sputtering, spin coating, industrial inkjet printing, roll to roll printing, or plating. After the forming of the plate-resistant partition walls, a post treatment process of a thermal curing method, a UV curing method, a plasma treatment, or a microwave treatment is performed. The metal layer is formed by spray coating, brushing, dipping, evaporation coating, a dropping method, sputtering, spin coating, industrial inkjet printing, roll to roll printing, or plating. The plate-resistant partition walls and the plate-resistant ink layer are removed by etching or stripping. The conductive metal thin film that is exposed by the removing of the plate resistant partition walls is removed by etching or stripping. Preferred Component: The conductive metal thin film is formed of silver, copper, nickel, gold, aluminum, titanium/tungsten, or their alloys. The metal layer is formed of silver, copper, nickel, gold, tin or their alloys.