TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The step of forming the upper metal layer includes: forming a plating layer on the lower metal layer by using the lower metal layer as a seed layer; and applying a conductive ink having a different metal from the conductive ink on the lower metal layer. The step of forming the upper metal layer includes forming a metal layer made of at least one of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, silver, gold, iron, tin, lead, or zinc. The method (I) further comprises: applying an organic acid onto the lower metal layer, before the forming the upper metal layer; forming a barrier layer between the lower metal layer and the upper metal layer; forming a top metal layer on the upper metal layer, where the top metal layer is used as a medium for connecting the conductive electrode pattern to an external electronic apparatus; and forming the top metal layer on the upper metal layer, where forming the top metal layer forms a tin layer on the upper metal layer by using the upper metal layer as a seed layer. The step of applying the organic acid includes supplying at least one of oxalic acid, oxaloacetic acid, fumaric acid, malic acid, succinic acid, acetic acid, butyric acid, palmitic acid, tartaric acid, ascorbic acid, uric acid, sulfonic acid, sulfinic acid, phenol, formic acid, citric acid, isocitric acid, alpha -ketoglutaric acid, succinic acid, or nucleic acid onto the substrate. The step of forming the barrier layer includes forming: a nickel layer on the lower metal layer; or a plating layer by using the lower metal layer as a seed layer. The step of forming the hetero-metal layer stacking structure includes forming a silver layer on the substrate, forming a barrier layer on the silver layer, forming a copper layer on the barrier layer, forming a copper layer (having a thickness thicker than the silver layer) on the silver layer, and forming a plating layer by using the copper layer as a seed layer. The step of forming the barrier layer includes forming a nickel plating layer by using the silver layer as a seed layer. The step of forming the plating layer includes forming a tin layer. The bottom metal layer of the metal layers is formed by an inkjet printing method, and a metal layer of the metal layers, formed on the bottom metal layer, is formed by a plating process using a metal layer below the metal layer as a seed layer. The step of forming the hetero-metal layer stacking layer further includes forming an organic compound thin layer between the metal layers. The step of forming the conductive electrode pattern is made by repeatedly applying conductive inks having different metals to the first region of the substrate. The step of forming the organic compound thin layer includes forming a metal layer on the first region of the substrate, and applying organic acids to the first region and the second region of the substrate, after forming the metal layer. The organic acid applied to the first region is used as a cleaning solution removing foreign substances from the surface of the metal layer, and the organic acid applied to the second region is used as a plating preventing layer that prevents a plating layer from being formed on the second region. The step of applying the organic acids is made using at least any one of spray coating, brushing, dipping, spin coating, inkjet printing, or roll-to-roll printing. The step of preparing the substrate includes preparing a silicon wafer having a thickness of less than or equal to 180 mu m. EXAMPLE - No suitable example given.