TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The system (I) further comprises a transfer station coupled between two adjacent process stations in the process stations. The substrate comprises soda lime glass, quartz, fused silica or plastic. In the system (II): the chambers include a first chamber for forming an electrode layer overlying the substrate, a second chamber for forming a copper layer overlying the electrode layer (where the second chamber is maintained at an environment having a pressure of less than or equal to 6.2 mTorr), a third chamber for sputtering an indium layer overlying the copper layer (where the indium layer has a copper-to indium atomic ratio of greater than or equal to 1.2), and a fourth chamber configured to perform a thermal process on the copper layer and the indium layer in an ambient of a gas phase sulfur-bearing species; the first chamber comprises a sputtering target comprising molybdenum material for sputter depositing the electrode layer, where the electrode layer has a thickness of 100-2 microns and a resistivity of 100-10 ohm-cm; the second chamber comprises a sputtering target comprising copper for sputter depositing the copper layer using a direct current magnetron sputtering technique; and the fourth chamber comprises many heaters configured to perform a rapid thermal annealing process on the substrate at 500 degrees C. In the system (III): the first electrode layer is formed in the first process chamber using a sputtering process; the first temperature is 500 degrees C; the first process chamber has a pressure of 10 microbar; the first process chamber, the second process chamber, the third process chamber, and the fourth process chamber are arranged in a serial configuration or radial configuration; the first transfer station couples the first process chamber and the first load lock; the second transfer station couples the second process chamber and the first load lock; the third transfer station couples the third process chamber and the first load lock; and the fourth transfer station couples the fourth process chamber and the first load lock. The system (III) further comprises: a first transfer station disposed between the first process chamber and the second process chamber; a second transfer station disposed between the second process chamber and the third process chamber; a third transfer station disposed between the third process chamber and the fourth process chamber; a transfer tool configured to transport the substrate between the load lock and each of the first process chamber, the second process chamber, the third process chamber and the fourth process chamber; and a second load lock configured to accept the substrate from the fourth process chamber.