NOVELTY - A front surface of N-type pulling mono-crystalline silicon wafer (1) is cleaned and diffused to obtain P-type emission nodes (2). P-type emission nodes are etched, removed and deposited on front surface of N-type pulling mono-crystalline silicon wafer to form compact silicon nitride mask layer. Back field N-type emission nodes (6) are prepared by diffusion process and silicon nitride mask layer is removed. Silver aluminum paste is printed on front and back surface and dried to form silver-aluminum metal grid line (5) and silver metal grid line (8).    USE - Manufacture of N-type solar battery.    ADVANTAGE - The method provides N-type solar battery having photoelectrical conversion efficiency of 18.8% by simple process.    DETAILED DESCRIPTION - A front surface of N-type pulling mono-crystalline silicon wafer is cleaned and subjected to positive pyramid texturing. The P-type emission nodes are prepared by diffusing resultant N-type pulling mono-crystalline silicon wafer through boron tribromide liquid. The obtained P-type emission nodes is etched back using hydrogen fluoride/nitric acid mixed liquid and borosilicate glass is removed using hydrogen fluoride. The resultant P-type emission nodes are deposited on front surface of N-type pulling mono-crystalline silicon wafer to form compact silicon nitride mask layer having thickness of 80-100 nm. The back field N-type emission nodes are prepared by diffusing phosphorus chloride oxide liquid on back of the N-type pulling mono-crystalline silicon wafer. The silicon nitride mask layer is removed using hot concentrated phosphoric acid and edges of P-N nodes are etched and removed by plasma. The phosphosilicate glass is removed using hydrogen fluoride (2-10%). An alumina passive film (3) having thickness of 10-50 nm is deposited on front surface of P-type emission nodes and further silicon nitride anti-reflection film (4) having thickness of 40-80 nm is deposited on front surface of P-type emission nodes, where total thickness of the alumina passive film and silicon nitride anti-reflection film is 70-80 nm. The silicon nitride passive film (7) having thickness of 70-100 nm is deposited on back surface of N-type emission nodes. Silver-aluminum paste is printed on front surface and dried to form silver-aluminum metal grid lines and silver paste is printed on back surface and sintered to form silver metal grid lines.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view explaining manufacture of N-type solar battery. (Drawing includes non-English language text)    N-type pulling mono-crystalline silicon wafer (1)    P-type emission nodes (2)    Alumina passive film (3)    Silicon nitride anti-reflection film (4)    Silver-aluminum metal grid lines (5)    N-type emission nodes (6)    Silicon nitride passive film (7)    Silver metal grid lines (8)