NOVELTY - Method (A) of growing material on a substrate comprises: providing a plasma chamber comprising an antenna adapted to create plasma from supplied gasses; placing the substrate in the plasma chamber on a platen which can be biased to many voltages; supplying a first and second species to the plasma chamber; performing a plasma deposition phase, where material from the first species is deposited onto the substrate; and performing an ion implantation phase, where ions of the second species are implanted into the material deposited during the plasma deposition phase.    USE - The methods are useful for: growing material on a substrate; fabricating a material with multiple band gap energies; and fabricating a solar cell on a substrate (all claimed).    ADVANTAGE - The method is cost effective and provides high quality crystalline materials.    DETAILED DESCRIPTION - Method (A) of growing material on a substrate comprises: providing a plasma chamber comprising an antenna adapted to create plasma from supplied gasses; placing the substrate in the plasma chamber on a platen which can be biased to many voltages; supplying a first species to the plasma chamber; supplying a second species to the plasma chamber; performing a plasma deposition phase, where material from the first species is deposited onto the substrate while at a first operating condition; and performing an ion implantation phase while at a second operating condition, where ions of the second species are implanted into the material deposited during the plasma deposition phase. INDEPENDENT CLAIMS are also included for:    (1) a method (B) of fabricating a material with multiple band gap energies, comprising: providing a plasma chamber comprising an antenna adapted to create a plasma from supplied gasses; placing the substrate in the plasma chamber on a platen which can be biased to many voltages; supplying a first species to the plasma chamber: supplying a second species to the plasma chamber: performing a first plasma deposition phase, where material from the first species is deposited onto the substrate while at a first operating condition; performing a first ion implantation phase while at a second operating condition, where ions of the second species are implanted into the material deposited during the first plasma deposition phase so as to crystallize the material to a first crystallization level; repeating the first plasma deposition phase and the first ion implantation phase many times so as to create a layer of the material at the first crystallization level; performing a second plasma deposition phase, where material from the first species is deposited onto the substrate while at a third operating condition; performing a second ion implantation phase while at a fourth operating condition, where ions of the second species are implanted into the material deposited during the second plasma deposition phase so as to crystallize the material to a second crystallization level, where the material at the first crystallization level has a different band gap energy than the material at the second crystallization level; and repeating the second plasma deposition phase and the second ion implantation phase many times so as to create a layer of the material at the second crystallization level; and    (2) a method (C) of fabricating a solar cell on a substrate comprising: providing a plasma chamber comprising an antenna adapted to create a plasma from supplied gasses; placing the substrate in the plasma chamber on a platen which can be biased to many voltages; supplying a first species, a second species and first dopant to the plasma chamber; performing a first growing step, where the first dopant and the second species are implanted, so as to create a first doped layer; disabling the first dopant to the plasma chamber; performing a second growing step, so as to create an intrinsic layer having a first bandgap energy; supplying a second dopant to the plasma chamber; and performing a third growing step, where the second dopant and the second species are implanted, so as to create a second doped layer, where each of the growing steps comprises performing a plasma deposition phase, where material from the first species is deposited onto a substrate while at a first operating condition, performing an ion implantation phase at a different operating condition, where ions of at least the second species are implanted into the material deposited during the plasma deposition phase, and sequentially repeating the plasma deposition phase and the ion implantation phase many times.