NOVELTY - The method comprises doping a first surface of a semiconductive substrate (1) with an n-dopant to form a first n+ layer (4) in the substrate, doping a second surface of the substrate with a p-dopant to form a p+ layer (5) in the substrate, applying an anti-reflective coating (6, 8) to the second surface, removing a portion of the first n+ layer from the first surface of the substrate such that a concentration of the n-dopant remaining in the first surface of the substrate is variable throughout the first surface, and doping the first surface of the substrate with the n-dopant.    USE - The method is useful for producing a bifacial photovoltaic cell of an array, which is useful in a power plant and an electric device (all claimed) such as a home power source, a hot water heater, a pocket computer, a notebook computer, a portable charging dock, a cellular phone, a pager, a personal digital assistant, a digital camera, a smoke detector, a global positioning system device, a toy, a computer peripheral device, satellite, a space craft, a portable electric appliance including portable TV and a portable lighting device and a cordless electric appliance including a cordless vacuum cleaner, a cordless drill and a cordless saw.    ADVANTAGE - The method is capable of economically, efficiently and simply producing the photovoltaic cell with enhanced light conversion efficiency and internal quantum efficiency, improved productivity, excellent device performance and reduced short circuit current characteristics and without any defects formation.    DETAILED DESCRIPTION - The method comprises doping a first surface of a semiconductive substrate (1) with an n-dopant to form a first n+ layer (4) in the substrate, doping a second surface of the substrate with a p-dopant to form a p+ layer (5) in the substrate, applying an anti-reflective coating (6, 8) to the second surface, removing a portion of the first n+ layer from the first surface of the substrate such that a concentration of the n-dopant remaining in the first surface of the substrate is variable throughout the first surface, doping the first surface of the substrate with the n-dopant so as to form a second n+ layer (7) using thermal treatment such that a concentration of the n-dopant in the second n+ layer is variable throughout the first surface, and forming electrical contacts (9) on each of the first surface and the second surface for producing the photovoltaic cell. The first n+ layer has a sheet resistance of less than 30 ohms, and a depth of 0.4-2 mu m. The second n+ layer has a sheet resistance of 30-100 ohms and a depth of 0.2-0.7 mu m. The removal of the portion of the first n+ layer comprises texturing the first surface, and etching the first surface to an average depth of 4-12 mu m. The texturing step generates peaks and troughs in the first surface, where a concentration of the n-dopant remaining in the first surface following texturing is greater in the peaks than in the troughs. A concentration of the n-dopant in the peaks in the second n+ layer is 5 x 1020 atoms/cm3. A concentration of the n-dopant in the troughs in the second n+ layer is less than 1021 atoms/cm3. The first and second surface of the substrate is doped by applying a film comprising the p-dopant to the second surface, applying a film comprising the n-dopant to the first surface, and heating the substrate for simultaneously forming the first n+ layer and the p+ layer. The substrate is an n-type semiconductor substrate and p-type semiconductor substrate. The anti-reflective coating has a refractive index of 2.1-2.2 and a graded refractive index of 1.7-2.25 that decreases from the direction of an interface with the substrate, and is subjected to thermal treatment, which increases a refractive index of the antireflective coating. The application of the anti-reflective coating inhibits doping by the n-dopant of a surface coated by the antireflective coating. An INDEPENDENT CLAIM is included for a bifacial photovoltaic cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method for producing a photovoltaic cell.    Substrate (1)    First n+ layer (4)    P+ layer (5)    Anti-reflection coatings (6, 8)    Second n+ layer (7)    Electrical contacts. (9)