TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first species comprises a deposition related gas, preferably silicon. The second species comprises an energy carrying gas, preferably an inert gas.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: In the method (A), the first operating condition and the second operating condition each comprise a bias voltage for the platen, pulse duration of the bias voltage, a power for the antenna, a pressure within the chamber, a flow rate of the first species, or a flow rate of the second species. In the method (A): the first operating condition comprises a ground voltage applied to the platen; and the second operating condition comprises a second voltage applied to the platen which is more negative than a first voltage applied to the platen during the first operating condition. In the method (A), a square wave voltage is applied to the platen. In the method (A), the plasma deposition phase and the ion implanting phase are repeated many times. The method (B), the first operating condition, the second operating condition, the third operating condition and the fourth operating condition each comprise a bias voltage for the platen, pulse duration of the bias voltage, a power for the antenna, a pressure within the chamber, a flow rate of the first species, or a flow rate of the second species. The method (B), further comprises: performing a third plasma deposition phase, where material from the first species is deposited onto the substrate while at a fifth operating condition; performing a third ion implantation phase while at a sixth operating condition, where ions of the second species are implanted into the material deposited during the third plasma deposition phase so as to crystallize the deposited material to a third crystallization level, where the material at the first crystallization level and the second crystallization level have a different band gap energy than the material at the third crystallization level; and repeating the third plasma deposition phase and the third ion implantation phase many times so as to create a layer of material at the third crystallization level. In the method (B), the material comprises many levels of crystallization, where each of the levels of crystallization comprises associated band gap energy. In the method (C), the first operating condition and the different operating condition each comprise a bias voltage for the platen, a pulse duration of the bias voltage, a power for the antenna, a pressure within the chamber, a flow rate of the first species, or a flow rate of the second species. The method (C), further comprises: supplying a third dopant to the plasma chamber; performing a fourth growing step, where the third dopant and the second species are implanted, so as to create a third doped layer; disabling the third dopant to the plasma chamber performing a fifth growing step, having a different operating condition during its respective ion implantation phase than the second growing step, so as to create an intrinsic layer having a second bandgap energy; supplying a fourth dopant to the plasma chamber; and performing a sixth growing step, where the fourth dopant and the second species are implanted, so as to create a fourth doped layer. The method (C), further comprises prior to supplying the second dopant, performing a fourth growing step, having a different operating condition during its respective ion implantation phase than the second growing step, so as to create an intrinsic layer having a second bandgap energy different than first bandgap energy. The method (C), further comprises performing a fifth growing step having a different operating condition during its respective ion implantation phase than the second and the fourth growing steps, after the fourth growing step, so as to create an intrinsic layer having a third bandgap energy different than the first and second bandgap energies. The method (C), further comprises prior to supplying the second dopant, performing many growing steps, each growing step having a different operating condition during its respective ion implantation phase, so as to create an intrinsic layer having many bandgap energies. EXAMPLE - No suitable example given.