TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The thermal process apparatus sequentially performs a rapid thermal crystallization process, a multi-stage crystallization process at a constant temperature, and a multi-stage cooling process by using a heating apparatus and a cooling apparatus. The primary or rear stage selenization/sulfidation reaction apparatus is sequentially fed in hydrogen sulfide and hydrogen selenide to perform a primary or rear stage sulfidation reaction and a primary or rear stage selenization reaction at rising temperatures. Preferred Components: The powder present in the powder trough of the: First and second TCO layer forming apparatuses is at least one of indium tin oxide, tin dioxide, indium titanium oxide or aluminum zinc oxide; copper/indium/gallium/selenium layer and cadmium sulfide layer forming apparatuses is at least one of copper indium alloy powder, copper indium gallium compound powder, copper indium selenide powder, copper indium gallium selenide powder, copper indium sulfide powder or copper indium gallium sulfide powder; and zinc oxide layer forming apparatus is zinc oxide powder. The solvent is one of alcohols, amines, dispersant, adhesive and levelling agents. The impure phase removing apparatus comprises an impure phase removing agent to remove the impure phase compounds including at least one of copper sulfide and copper selenide, and the impure phase removing agent is sodium cyanide, potassium cyanide or bromide. The cadmium sulfide layer growing apparatus comprises a solution containing sulfur and cadmium, in which the copper/indium/gallium/selenium layer is immersed to form the cadmium sulfide layer on the copper/indium/gallium/selenium layer, where the solution is ammonia, thiourea, and chlorides including at least one of cadmium chloride, cadmium sulfate, cadmium iodide and cadmium diacetate.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The first TCO layer forming apparatus and zinc oxide layer forming apparatuses comprise: a mixing apparatus containing a powder trough with at least one powder, a solvent trough with at least one solvent, and a mixing trough to perform the mixing process; a coating layer forming apparatus containing one of a spray coating apparatus (with many supersonic nozzles, a supersonic controller and an air pressure flow rate controller) for performing spray coating, a coating apparatus for performing coating and an immersing apparatus for immersing to perform the coating layer forming process; a drying apparatus (which is a heating apparatus including at least one of an electrically heated wire, an ultra-red ray source, and a radiation source including a microwave source) to perform drying process; a compacting apparatus containing a rolling apparatus for performing a rolling process, a high-pressure liquid laminate spray apparatus for performing a high-pressure liquid laminate spray process, and a high-pressure gas laminate spray apparatus for performing a high-pressure gas laminate spray process, where the rolling apparatus comprises many rollers for sequentially applying low pressure, middle pressure, and high pressure to perform compacting step by step; a thermal process apparatus to perform the thermal process and a cutting apparatus containing a laser and a scraping knife to perform the cutting process. The copper/indium/gallium/selenium layer and cadmium sulfide layer forming apparatuses comprise a mixing apparatus, a coating layer forming apparatus, a drying apparatus, a primary selenization/sulfidation reaction apparatus, a thermal process apparatus, an impure phase removing apparatus, a rear stage selenization/sulfidation reaction apparatus and a cadmium sulfide layer growing apparatus to perform the mixing process, the coating layer forming process, the drying process, the compacting process, the primary sulfidation-selenization reaction process, the thermal process, the impure phase removing process, the rear stage selenization/sulfidation reaction process, and the cadmium sulfide layer growing process, respectively. The second TCO layer forming apparatus comprises a mixing apparatus, a coating layer forming apparatus, a drying apparatus, a compacting apparatus, a thermal process apparatus, and a cutting apparatus to perform the mixing process by mixing a transparent conductive oxide powder with at least one solvent, the coating layer forming process, the drying process, the compacting process, the thermal process, and the cutting process, respectively. EXAMPLE - No suitable example given.