NOVELTY - The system has a C-shaped top susceptor nested inside a C-shaped base susceptor. A wafer-mounting side of the base susceptor faces the base susceptor's wafer- mounting side for forming an enclosed narrow channel. The base susceptor provides an upward support to the top susceptor. The base susceptor includes a three-point supporting mechanism to provide stable upward support to the system. A suspension mechanism comprises a hook that is situated at a top edge of the base susceptor. The base susceptor supports the top susceptor using a pivoting mechanism.    USE - System for carrying wafers in a deposition chamber of a material deposition reactor (claimed) in a solar cell industry.    ADVANTAGE - The system is provided with deposition substrates to contain precursor gases from depositing material on inner walls of a reactor chamber, so that the substrate can increase trichlorosilane gas utilization rate significantly. The suspension mechanism enables automated loading/unloading of the system. The system avoids contact between the susceptor edges by attaching other susceptor onto the base susceptor, thus eliminating generation of unwanted particles. The system has suspension design to ensure the susceptors to maintain in vertical orientation during deposition, thus ensuring stability to the wafers. The system improves utilization of the precursor gas and prevents deposition on chamber walls. The top susceptor is nested inside the base susceptor without touching the front edge of base susceptor, thus preventing occurrence of rubbing.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a reactor comprising a chamber.    DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of a 9-chamber epitaxial reactor.    Gas/chemical box (302)    Alternating current panel (304)    Silicon-controlled rectifier panel (306)    Blower (308)    Reaction chamber (310)    Lid (312)    Lamp heating unit (314)    Rimming beam (316)    Factory load/unload susceptor station (318)    Susceptor stand (320)