NOVELTY - Wafer is textured, phosphorus dispersion and thermal dispersion are performed, and phosphosilicate glass is generated on surface. Phosphosilicate glass is doped by laser. Phosphorus in glass is dispersed on laser-scanned portion of wafer, doped region is formed, and boundary is isolated. Coating layer is formed on front surface. Silver slurry is plated on front surface of wafer and front electrode is formed. Silver slurry is plated on rear surface of wafer to form back electrode. Aluminum slurry is plated on rear surface of wafer, and sintered, to form selective emitter solar cell.    USE - Preparation of selective emitter solar cell.    DETAILED DESCRIPTION - Damaged surface on wafer is washed, wafer surface is textured, phosphorus dispersion and thermal dispersion are performed to form N-type layer, phosphosilicate having thickness of 10-200 nm is generated on surface, phosphorus content in phosphosilicate glass is adjusted by phosphorus source quantity used during dispersion, and thickness of phosphosilicate glass is adjusted by oxygen content used during dispersion process. Phosphosilicate glass is scanned, thermally dispersed and doped by laser, based on metalized pattern. Phosphorus in phosphosilicate glass is dispersed on laser-scanned portion of wafer by local fusion of wafer, doped region is formed, and boundary is isolated. Damaged layer in laser-fused wafer is removed in alkali solution, phosphosilicate glass residue is removed, coating layer having thickness of 60-150 nm is formed on front surface by plasma-enhanced chemical vapor deposition. Silver slurry is plated on front surface of wafer by screen printing process, and front electrode is formed on laser-scanned region. Silver slurry is plated on rear surface of wafer to form back electrode. Aluminum slurry is plated on rear surface of wafer through screen printing process to form back electric field, and sintered at 700-1000 degrees C to make the metal electrode element and silicon in the wafer eutectic. Coating layer contains passivation layer and anti-reflection film. Passivation layer has silicon oxide (SiOx), silicon carbide (SiCx), silicon nitride (SiNx) or alumina film, where x is not defined, to obtain selective emitter solar cell.