NOVELTY - A thin film solar cell (100) comprises: substrate (110); first conductive layer (120), doped with boron atoms so as to have texture structure, where isotope B10 doped in first conductive layer accounts for more than 19.9% relative to total boron atoms, and first conductive layer is disposed on substrate; photovoltaic layer (130) disposed on first conductive layer; and second conductive layer (140) disposed on photovoltaic layer.    USE - As thin film solar cell, and semiconductor device; where semiconductor device has source/drain region and comprises P-type metal oxide semiconductor (PMOS) transistor; source/drain region and comprises non-volatile memory device; or is semiconductor layer in solar cell (claimed).    ADVANTAGE - The thin film solar cell has effectively enhanced light utilization rate, while recombination of electron-hole pairs on surface is lowered, so as to achieve higher photoelectric conversion efficiency. In thin film solar cell, with the presence of first conductive layer doped with boron atoms that is present as texture structure, utilization rate of light incident to interior of thin film solar cell is enhanced, dangling bonds between first conductive layer and photovoltaic layer are decreased, possibility of recombination of electron-hole pairs on surface is avoided, whole conductivity of first conductive layer is increased, and whole electrical performance of thin film solar cell is further improved. The method for forming thin film solar cell also provides improved method with inclusion of neutron treatment process. In thin film solar cell, it is known that several dangling bonds are present on contact surface between first conductive layer and photovoltaic layer. In thin film solar cell, isotope B10 doped in first conductive layer accounts for more than 19.9% relative to total boron atoms, and neutrons are absorbed to isotope B10. Accordingly, after neutron treatment is performed to first conductive layer, amount of dangling bonds between first conductive layer and photovoltaic layer can be effectively decreased. Therefore, possibility of recombination of electron-hole pairs on surface of photovoltaic layer is lowered, and electrical performance and photoelectric conversion efficiency of thin film solar cell are further improved. Further the method provides simple process step to form texture structure selected from ion implantation process or plasma doping process, so as to form thin film solar cell. Further it is found that in manufacture of semiconductor device, when neutron treatment step is performed to silicon substrate with boron dopants, carrier mobility is increased as dangling bonds are saturated, which enhances operation speed of device and performance of device is further improved.    DETAILED DESCRIPTION - A thin film solar cell (100) comprises: substrate (110); first conductive layer (120), doped with boron atoms so as to have texture structure, where isotope B10 doped in first conductive layer accounts for more than 19.9% relative to total boron atoms, and first conductive layer is disposed on substrate; photovoltaic layer (130) disposed on first conductive layer; and second conductive layer (140) disposed on photovoltaic layer. The photovoltaic layer is Group IV thin film, III-V compound semiconductor thin film, II-VI compound semiconductor thin film, or organic compound semiconductor thin film. INDEPENDENT CLAIMS are included for the following:    (1) manufacturing thin film solar cell involving: providing substrate; forming first conductive layer on substrate; doping boron atoms in first conductive layer so as to form texture structure on surface of first conductive layer, where isotope B10 doped in first conductive layer accounts for more than 19.9% relative to total boron atoms; forming photovoltaic layer on first conductive layer; and forming second conductive layer on photovoltaic layer;    (2) increasing carrier mobility in semiconductor device involving: providing silicon substrate; performing boron doping step to silicon substrate; and performing neutron treatment step to silicon substrate; and    (3) semiconductor device comprising: silicon substrate; and boron doped region, disposed in at least portion of silicon substrate, where neutrons are absorbed to boron doped region.    DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional view of the thin film solar cell.    Thin film solar cell (100)    Substrate (110)    First conductive layer (120)    First openings in first conductive layer exposing portion of substrate (124)    Photovoltaic layer (130)    Second conductive layer (140)