NOVELTY - The method comprises growing (301) n-type silicon nanowires on a first substrate, forming (302) an organic layer on a second substrate, treating the n-type silicon nanowires with a hydrogen fluoride solution, thermal pressing (303) the n-type silicon nanowires of the first substrate into the organic layer of the second substrate so that the n-type silicon nanowires are released from the first substrate and embedded within the organic layer of the second substrate, and forming (304) an electrode on the organic layer that contains the embedded thermal pressed n-type silicon nanowires.    USE - The method is useful for fabricating a hybrid solar cell.    ADVANTAGE - The method is capable of easily and economically fabricating the hybrid solar cell with large surface area, improved electronic properties such as open circuit voltage and increased transfer efficiency.    DETAILED DESCRIPTION - The method comprises growing (301) n-type silicon nanowires on a first substrate, forming (302) an organic layer on a second substrate, treating the n-type silicon nanowires with a hydrogen fluoride solution, thermal pressing (303) the n-type silicon nanowires of the first substrate into the organic layer of the second substrate so that the n-type silicon nanowires are released from the first substrate and embedded within the organic layer of the second substrate, forming (304) an electrode on the organic layer that contains the embedded thermal pressed n-type silicon nanowires, and exposing the electrode at UV light for a period of 5-10 min. The n-type silicon nanowires are grown by depositing a layer of metal on a surface of the first substrate, heating the first substrate until the layer of metal is melted into a liquid, saturating the melted metal liquid with silicon by contacting the melted metal liquid with a gas, growing the silicon nanowires on the surface of the first substrate, and doping the silicon nanowires with a dopant to form the n-type silicon nanowires on the first substrate, and are grown by low pressure chemical vapor deposition at a pressure of 200-400 mTorr for 10-60 min. The layer of metal has a thickness of 8 nm. The second substrate comprises a layer of an indium tin oxide (ITO) disposed on the second substrate, and a layer of poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) disposed on the ITO layer. An INDEPENDENT CLAIM is included for a hybrid solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a flowchart of a method of fabricating a hybrid solar cell.    Growing silicon nanowires on first substrate (301)    Forming organic layer on second substrate (302)    Thermal pressing the nanowires into the organic layer (303)    Forming electrode on organic layer. (304)