NOVELTY - Method (I) of manufacturing photovoltaic device, comprises: placing substrate at first process station; forming first electrode layer on the surface region of substrate at first process station; transferring substrate to second process station; forming p-type absorber layer on first conductor layer at second process station; transferring substrate to third process station; forming n-type window layer on p-type absorber layer at third process station; transferring substrate to fourth process station; and forming second electrode layer on n-type window layer at fourth process station.    USE - The method is useful for manufacturing a photovoltaic device.    ADVANTAGE - The method provides photovoltaic device in large scale manner.    DETAILED DESCRIPTION - Method (I) of manufacturing a photovoltaic device, comprises: placing a substrate having a surface region at a first process station; forming a first electrode layer overlying the surface region of the substrate at the first process station using a first process; transferring the substrate in a controlled ambient to a second process station; forming a p-type absorber layer overlying the first conductor layer at the second process station using a second process, where the p-type absorber layer is characterized by a first bandgap range and a first thickness range; transferring the substrate in a controlled ambient to a third process station; forming a n-type window layer overlying the p-type absorber layer at the third process station using a third process; transferring the substrate in a controlled ambient to a fourth process station; and forming a second electrode layer overlying the n-type window layer at the fourth process station using a fourth process. INDEPENDENT CLAIMS are also included for:    (1) method (II) of manufacturing a photovoltaic device comprising: (a) placing a substrate having a surface region in a first process station; (b) forming a first electrode layer overlying the surface region at the first process station; (c) transferring the substrate to a second process station; (d) forming a window layer (550) overlying the first electrode layer at the second process station; (e) transferring the substrate to a third process station; (f) forming an absorber layer (560) overlying the window layer at the third process station; (g) transferring the substrate to a fourth process station; and (h) forming a second electrode layer overlying the absorber layer at the fourth process station;    (2) method (III) of manufacturing a photovoltaic device comprising: the steps (a)-(c) as above per se; forming a first absorber layer overlying the first electrode layer at the second process station; transferring the substrate to a third process station; forming a first window layer overlying the first absorber layer at the third process station; transferring the substrate to a fourth process station; forming a n-type tunnel junction layer overlying the first window layer at the fourth process station; transferring the substrate to a fifth process station; forming a p-type tunnel junction layer overlying the n-type tunnel junction layer at the fifth process station; transferring the substrate to a sixth process station; forming a second absorber layer overlying the p-type tunnel junction layer at the sixth process station; transferring the substrate to a seventh process station; forming a second window layer overlying the second absorber layer at the seventh process station; transferring the substrate to an eighth process station; and forming a second electrode layer overlying the second window layer at the eighth process station; and    (3) method (IV) of manufacturing a photovoltaic device comprising: the steps (a)-(c) as above per se; forming a first p-type absorber layer overlying the first electrode layer at the second process station; transferring the substrate to a third process station; forming a first n-type window layer overlying the first p-type absorber layer at the third process station; transferring the substrate to a fourth process station; forming a second electrode layer overlying the first n-type window layer at the fourth process station; transferring the substrate to a fifth process station; forming a second p-type absorber layer overlying the second electrode layer at the fifth process station; transferring the substrate to a sixth process station; forming a second n-type window layer overlying the second p-type absorber layer at the sixth process station; transferring the substrate to a seventh process station; and forming a third electrode layer overlying the second n-type window layer at the seventh process station.    DESCRIPTION OF DRAWING(S) - The figure shows simplified flow chart illustrating a method of manufacturing thin film photovoltaic devices.    Forming barrier layer (520)    Forming front transparent electrode (530)    Forming high resistive layer (540)    Forming window layer (550)    Forming absorber layer (560)