NOVELTY - The process comprises forming a film with a roll-to-roll system, forming a buffer layer with a liquid phase technique and a chemical bath deposition technique in an in-line mode/off-line mode, forming a window layer on the buffer layer with a coating technique and/or the deposition technique, forming a transparent conductive layer with the liquid phase technique and an electrolytic deposition technique using a reaction mixture, and arranging a bottom electrode layer (120), a photoelectric conversion semiconductor layer (130), the buffer layer and the conductive layer on a substrate.    USE - The process is useful for producing a photoelectric conversion device is useful as a solar cell and infrared sensors.    ADVANTAGE - The process is capable of simply and economically producing a photoelectric conversion device with good device characteristics and high photoelectric conversion efficiency.    DETAILED DESCRIPTION - The process comprises forming a film with a roll-to-roll system, forming a buffer layer with a liquid phase technique and a chemical bath deposition technique in an in-line mode/off-line mode, forming a window layer on the buffer layer with a coating technique and/or the deposition technique, forming a transparent conductive layer with the liquid phase technique and an electrolytic deposition technique using a reaction mixture, and arranging a bottom electrode layer (120), a photoelectric conversion semiconductor layer (130), the buffer layer and the conductive layer on a substrate. The substrate is provided with an electrical insulator layer on a front surface side on which the bottom electrode layer is to be formed and with a metal layer on a rear surface side, and is an electrically insulating substrate and an anodized substrate (110') comprising: a composite base material that is made of an iron material and an aluminum film material that is composited on a surface side of the iron material; and an anodic oxide film that is formed on a surface side of the composite base material. The bottom electrode layer is stacked on the front surface side of the substrate. The transparent conductive layer is formed by the metal layer as a cathode and by the bottom electrode layer as a cathode. The photoelectric conversion semiconductor layer is formed on the bottom electrode layer such that a part of the bottom electrode layer is exposed. A terminal is located at the exposed part of the bottom electrode layer. The buffer layer is constituted of a zinc compound layer that is formed with the chemical bath deposition technique by use of a reaction mixture at a reaction temperature of 70-95 degrees C and is subjected to annealing processing at a temperature of 150-220 degrees C for a period of time of 5-90 minutes, and is formed on the photoelectric conversion semiconductor layer within 10 minutes, where the conversion semiconductor layer is subjected to the surface treatment. The formation of the transparent conductive layer is performed on the buffer layer such that the window layer intervenes between the buffer layer and the transparent conductive layer. The surface of the photoelectric conversion semiconductor layer is subjected to surface treatment by dipping in a reaction liquid adapted for removing impurities from the surface. A principal ingredient of the photoelectric conversion semiconductor layer is a compound semiconductor having a chalcopyrite structure.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a process for producing a photoelectric conversion device.    Layered substrate (10')    Anodic oxide films (102)    Anodized substrate (110')    Bottom electrode layer (120)    Photoelectric conversion semiconductor layer. (130)