TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The doped films include a P-type doped film and an N-type doped film, and the doped films are stacked on the first conductive layer. The P-type doped film is disposed between the first conductive layer and the N-type doped film, or the N-type doped film is disposed between the first conductive layer and the P-type doped film. The photovoltaic layer further comprises an intrinsic layer disposed between the P-type doped film and the N-type doped film. The doped films include many P-type doped films and many N-type doped films, each of the P-type doped films and each of the N-type doped films are stacked on the first conductive layer alternately to form many p-n junctions, the photovoltaic layer further comprises at least one intrinsic layer disposed between some of the doped films, and when the at least one passivation layer is disposed between the doped films in the photovoltaic layer, the P-type doped films are disposed between the at least one passivation layer and the at least one intrinsic layer or the N-type doped films are disposed between the at least one passivation layer and the at least one intrinsic layer. The passivation layer is made of silicon oxide, silicon nitride and/or silicon oxynitride or an intrinsic semiconductor material. The passivation layer has a thickness of 1-10000 A. The photovoltaic layer is made of a group IV element semiconductor thin film, a group III-V compound semiconductor thin film, a group II-VI compound semiconductor thin film and/or an organic compound semiconductor thin film. The group IV element semiconductor thin film comprises at least one of a carbon element thin film, a silicon element thin film, a germanium elemental thin film, a silicon carbide thin film and/or a germanium silicide thin film, in a monocrystalline phase, a polycrystalline phase, an amorphous phase or a microcrystalline phase. The group III-V compound semiconductor thin film comprises at least one of a gallium arsenide compound thin film and/or an indium gallium phosphide compound thin film. The group II-VI compound semiconductor thin film comprises at least one of a copper indium selenium compound thin film, a copper indium gallium selenium compound thin film and/or a cadmium telluride compound thin film. The organic compound semiconductor thin film comprises a mixture of a conjugated polymer donor and a carbon nanosphere acceptor. The first conductive layer is made of a transparent conductive layer while the second conductive layer comprises at least one of a reflective layer and a transparent conductive layer, or the second conductive layer is made of a transparent conductive layer while the first conductive layer comprises at least one of a reflective layer and a transparent conductive layer. Preferred Method: In the method, the step of forming the passivation layer comprises: forming a native oxide on at least one of the first conductive layer and the second conductive layer; performing carbon dioxide plasma process or a deposition process. The native oxide is silicon oxide. The deposition process comprises a plasma enhanced chemical vapor deposition process, a radio frequency plasma enhanced chemical vapor deposition process, a very high frequency plasma enhanced chemical vapor deposition process or a microwave plasma enhanced chemical vapor deposition process.