TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The precursor is solid, halides, alkoxides, beta -diketonates, nitrates, alkylamides, amidinates, cyclopentadienyls, and other forms of organic or inorganic metal, non-metal compounds, tetrakis(ethylmethylamino)hafnium, hafnium (IV) nitrate anhydrous, hafnium (IV) iodide anhydrous, dimethyl-bis(tert-butyl cyclopentadienyl hafnium ((t-Bu)Cp)2HfMe2), tetrakis(1-methoxy-2-methyl-2-propoxide) hafnium (IV), di(cyclopentadienyl)hafnium dichloride, hafnium tert-butoxide, hafnium ethoxide, aluminum isopropoxide, lead t-butoxide, zirconium (IV) t-butoxide, titanium (IV) isopropoxide, barium isopropoxide, strontium isopropoxide, bis(pentamethyl-cyclopentadienyl)barium, bis(tripropyl Cp)strontium, (trimethyl)pentamethylcyclopentadienyl titanium (IV), bis(2,2,6,6-tetramethyl-3,5-heptanedionato) barium triglyme adduct, bis(2,2,6,6-tetramethyl-3,5-heptanedionato)strontium triglyme adduct, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) titanium (III), bis(cyclopentadienyl) ruthenium (II) (RuCP2), pentakis(dimethylamido)tantalum or Ta(NMe2)3(NC9H11) (tantalum film precursors). The combination of precursor, solvent and thin film comprises precursor aluminum isopropoxide, solvent ethylcyclohexane or octane, thin film aluminum oxide, precursor ((t-Bu)Cp)2HfMe2, solvent ethylcyclohexane or octane, thin film hafnium dioxide (HfO2), precursor tetrakis(1-methoxy-2-methyl-2-propoxide) hafnium (IV), solvent ethylcyclohexane or octane, thin film HfO2 precursor hafnium tert-butoxide or hafnium ethoxide, solvent ethylcyclohexane or octane, thin film HfO2, precursor mixture of barium isopropoxide, strontium isopropoxide, titanium isopropoxide, solvent ethylcyclohexane or octane, thin film barium strontium titanate, precursor RuCp2, solvent dioxane, dioxane/octane or 2,5-dimethyloxytetrahydrofuran/octane, and thin film ruthenium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The method comprises alternately delivering the vaporized precursor solution and a vaporized reaction solution to the deposition chamber, forming a monolayer of components of the precursor solution and reaction solution on a surface of a substrate in the deposition chamber, and repeating until a thin film of a predetermined thickness is formed, where the vaporized precursor solution comprises one or more precursors dissolved in a solvent, and the precursor solution is delivered to a vaporizer at room temperature and vaporized without decomposition or condensation. The method further comprises purging the deposition chamber between each alternate delivery of vaporized precursor solution and vaporized reaction solution. The vaporized precursor solution is delivered for 0.1-10 seconds, a first purge is carried out for 1-10 seconds, vaporized reaction solution is delivered for 0.1-10 seconds, and a second purge is carried out for 1-10 seconds. Preferred Components: The concentration of the precursor in the precursor solution is 0.01-1 M. The precursor solution further: includes stabilizing additives with concentrations of 0.0001-1 M; and comprises oxygen comprising organic compounds such as tetrahydrofuran, 1,4-dioxane, and dimethylformamide. The solvent has a boiling point to ensure no solvent loss during vaporization. The solvent comprises dioxane, toluene, n-butyl acetate, octane, ethylcyclohexane, 2-methoxyethyl acetate, cyclohexanone, propylcyclohexane, 2-methoxyethyl ether (diglyme), butylcyclohexane and 2,5-dimethyloxytetrahydrofuran. The reaction solution comprises water, oxygen, ozone, hydrogen, ammonia, silane, disilane, diborane, hydrogen sulfide, organic amines and hydrazines, or other gaseous molecule or plasma or radical sources. The delivery of the vaporized precursor solution comprises delivery at a flow rate of 10 nl/minute-10 ml/minute. The precursor solution is vaporized at 100-350 degrees C and a pressure of -14 psig to +10 psig.