NOVELTY - A solar silicon wafer wire-electrode cutting wear-resistant steel line is manufactured by solidifying wear-resistant complex base materials (I) on the steel line surface. The complex base materials (I) consist of copolymer resin (A), acetic ether, ethanol, butanol, and amino phenolic resins. The copolymer resin (A) comprises initiator; ethanol; silicon carbide particles; and composite monomer (A1) comprising not less than 3 monomers consisting of methyl methacrylate, ethyl methacrylate, butyl acrylate, octyl acrylate, butyl methacrylate, acrylic acid, N-hydroxymethyl acrylamide, and/or acrylamide.    USE - Method for manufacturing solar silicon wafer wire-electrode cutting wear-resistant steel line (claimed).    ADVANTAGE - The method is environment-friendly and is capable of modifying the surface of steel line to change the thickness of the steel line so as to reduce the abrasion of steel wire caused by the cutting process during use, reduce the use amount of steel wire, improve the wire cutting efficiency, and reduce the processing cost. The obtained solar silicon wafer wire-electrode cutting wear-resistant steel line has good wear resistance, uniform wire diameter, and high tensile strength; and can effectively replace the existing solar silicon wafer wire-electrode cutting steel line.    DETAILED DESCRIPTION - A solar silicon wafer wire-electrode cutting wear-resistant steel line is manufactured by solidifying wear-resistant complex base materials (I) on the steel line surface. The complex base materials (I) consist of (pts. wt.) acetic ether (10-60), ethanol (3-10), butanol (3-10), amino phenolic resins (2-40), and copolymer resin (A) containing silicon carbide micro-powder (5-30). The copolymer resin (A) comprises (pts. wt.) composite monomer (A1) (100), initiator (0.35-0.65), ethanol (120-450), and silicon carbide particles (5-200). The composite monomer (A1) comprises not less than 3 monomers consisting of methyl methacrylate, ethyl methacrylate, butyl acrylate, octyl acrylate, butyl methacrylate, acrylic acid, N-hydroxymethyl acrylamide, and/or acrylamide. The coating layer formed by the complex base materials (I) has a thickness of 2-10 mu m and is baked at 120-300 degrees C for 3-10 minutes.