TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The microcrystalline silicon hole-transmission layer has a thickness of 100-2000 nm.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The titanium sheet, aluminum sheet, copper sheet, and steel sheet plated with titanium, aluminum, or copper metal layer on surface have a thickness of 0.4-1.5 mm. The thickness of glass substrate plated with titanium, aluminum, or copper metal layer on surface has a thickness of 2.5-5 mm. The ceramic substrate plated with titanium, aluminum, or copper metal layer on surface has a thickness of 4-8 mm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The dye is black dye or RuL2(NCS)2 dye. The dye-sensitized nanocrystalline porous film has a thickness of 1-30 mu m and nano-grain diameter of 10-100 nm. It is dye-sensitized TiO2 nanocrystalline porous film or dye-sensitized ZnO nanocrystalline porous film.    TECHNOLOGY FOCUS - POLYMERS - Preparation: The composite film solar battery is prepared by (A) preparing dye-sensitized nanocrystalline porous film coated on conductive substrate comprising (i) preparing dye-sensitized titanium dioxide (TiO2) nanocrystalline porous film on conductive substrate by taking isopropyl titanate as precursor; adding glacial acetic acid to isopropyl titanate based on mass ratio of isopropyl titanate to glacial acetic acid of 4.8:1; agitating for 5-15 minutes at room temperature; transferring the formed mixed solution to deionized water; controlling volume ratio of mixed solution to deionized water at 1:10; continuously agitating for 0.5-1.5 hours; adding 65 wt.% nitric acid (HNO3) based on volume ratio of mixed solution to HNO3 of 20:1; agitating generated suspension; performing water bath thermal treatment; uniformly raising temperature from room temperature to 70-80 degrees C within 20-60 minutes; keeping temperature for 5-15 minutes until the liquid is just clear to form sol; adding deionized water to the sol; controlling volume ratio of sol to deionized water at 15-20:1; taking 200 ml of the obtained liquid; placing in 300-ml high-pressure kettle; performing thermal treatment for 12-36 hours at 5-10 MPa and 210-270 degrees C; adding 65 wt.% HNO3 based on the volume ratio of the obtained slurry mixture to HNO3 of 20:1; using an ultrasonic cell disintegrator to ultrasonically treat for 240 minutes to disperse; rotary evaporating the slurry suspension at - 0.1 MPa and 40 degrees C for 60 minutes; high-speed centrifuging at 12000 revolutions/minute until dry; washing with anhydrous ethanol; repeatedly performing high-speed centrifuging and washing with anhydrous ethanol; washing with deionized water once to obtain TiO2 nanocrystalline semiconductor grains; mixing TiO2 nanocrystalline semiconductor grains and polyglycol at 1-5:1 mass ratio; adding 10 wt.% HNO3 as dispersant based on mass ratio of HNO3 to TiO2 nanocrystalline semiconductor grains of 1:5; simultaneously adding deionized water based on mass ratio of deionized water to TiO2 nanocrystalline semiconductor grains of 1:1; planet ball milling the generated mixture for 8 hours; adding Triton X100 (RTM: polyethylene glycol tert-octylphenyl ether) emulsifier based on mass ratio of Triton X100 (RTM: polyethylene glycol tert-octylphenyl ether) to TiO2 nanocrystalline semiconductor grains of 1:50; ultrasonically processing for 30 minutes to obtain TiO2 nanocrystalline slurry; cleanly washing the chosen conductive substrate with universal detergent; respectively using acetone and ethanol to perform ultrasonic cleaning for 20 minutes; using deionized water to rinse; soaking the rinsed conductive substrate in anhydrous ethanol for 0.5 hour; taking out; blowing with nitrogen; placing in 40 mmol/L titanium tetrachloride (TiCl4) aqueous solution; processing for 30 minutes in 70 degrees C water bath; using a semi-automatic coating machine to coat the TiO2 nanocrystalline slurry on the processed conductive substrate; controlling thickness of the coating wet film at 80 mu m; after coating, placing in 63 degrees C oven to roast for 60 minutes; taking out; repeating the coating and roasting steps for 2-5 times to obtain dry conductive substrate coated with TiO2 nanocrystalline slurry; performing thermal treatment by placing the dried conductive substrate coated with TiO2 nanocrystalline slurry in a muffle furnace to thermally treat, at 10 degrees C/minute rate, heating from room temperature to 260 degrees C, keeping temperature for 5 minutes, heating at 375 degrees C and keeping temperature for 5 minutes, heating at 450 degrees C and keeping temperature for 15 minutes, and heating at 500 degrees C and keeping temperature for 15 minutes to obtain TiO2 nanocrystalline porous film coated on the conductive substrate; or performing thermal treatment to the coated conductive substrate (except glass substrate) by placing the dried conductive substrate coated with TiO2 nanocrystalline slurry in 50 mmol/L TiCl4 aqueous solution, treating for 30 minutes in 70 degrees C water bath, soaking in a container filled with solution of acetone, ethanol, and deionized water, controlling the volume ratio of ethanol, acetone, and water at 0.2:1:1, placing the container in multifunctional vibrator to vibrate for 0.5 hour, placing in an oven to thermally treat at 2 degrees C/minute rate, heating from room temperature to 59 degrees C and keeping temperature for 5 minutes, heating at 80 degrees C and keeping temperature for 30 minutes, and heating at 105 degrees C and keeping temperature for 15 minutes to obtain TiO2 nanocrystalline porous film coated on conductive substrate; placing the TiO2 nanocrystalline porous film coated on conductive substrate in 40 mmol/L TiCl4 aqueous solution; processing for 30 minutes in 70 degrees C water bath; sintering for 30 minutes at 500 degrees C; when temperature of TiO2 nanocrystalline porous film coated on conductive substrate decreases to 80 degrees C, soaking the film in aqueous ethanol solution of black dye or ruthenium bipyridyl complex (RuL2(NCS)2) having a concentration of 0.5 mmol/L; and soaking for 24 hours without light to obtain conductive substrate coated with TiO2 nanocrystalline porous film; or (ii) preparing dye-sensitized zinc oxide (ZnO) nanocrystalline porous film coated on conductive substrate by mixing zinc acetate solution and sodium carbonate solution having equal mass and concentration of 0.5 mol/L; agitating to react for 1 hour; filtering and separating the precipitates; washing the precipitates with 0.1 mol/L diluted ammonia water; washing with anhydrous ethanol for 3 times; drying at 60 degrees C and roasting for 1 hour at 350 degrees C to obtain ZnO powder; putting in ethanol based on ZnO and ethanol ratio of 1 g:6.25 ml; ultrasonically dispersing to prepare ZnO nanocrystalline slurry; processing conductive substrate in the same method with step (A)(i); using semi-automatic coating machine to coat the obtained ZnO nanocrystalline slurry on the processed conductive substrate; controlling coating wet film thickness at 80 mu m; airing to obtain dried conductive substrate coated with ZnO nanocrystalline slurry; directly placing the dried conductive substrate coated with ZnO nanocrystalline slurry in a muffle furnace; roasting for 1 hour at 350 degrees C to obtain ZnO nanocrystalline porous film coated on conductive substrate; when temperature of ZnO nanocrystalline porous film coated on conductive substrate cools to 80 degrees C, putting while hot in black dye or anhydrous ethanol solution of RuL2(NCS)2 dye having concentration of 0.5 mmol/L; soaking for 2 hours without light; taking out; and rinsing excess dye with ethanol to prepare ZnO nanocrystalline porous film coated on conductive substrate; (B) preparing dye-sensitized nanocrystalline-microcrystalline silicon composite film by rinsing dye-sensitized nanocrystalline porous film coated on conductive substrate in anhydrous ethanol for 3 minutes; taking out; blowing with nitrogen; taking the dye-sensitized nanocrystalline porous film coated on conductive substrate as substrate, depositing microcrystalline silicon film layer by capacitance vortex-type plasma chemical vapor deposition system; using mixed gas of silane (SiH4), borane (BH3), SiH4, and H2 at 1:0.4:0.4:98.2 volume ratio as reaction gas; and controlling temperature of substrate at 170 degrees C, radio frequency power at 50-80 W, vapor deposition pressure at 50-200 Pa, gas total flow rate at 200 ml/minute, and deposition time at 60-150 minutes to prepare solid dye-sensitized nanocrystalline-microcrystalline silicon composite film, where microcrystalline silicon hole-transmission layer has thickness of 100-2000 nm and energy level matching with the dye; and (C) preparing composite film solar battery taking microcrystalline silicon layer as incident layer by plating transparent conductive layer on solid dye-sensitized nanocrystalline-microcrystalline silicon composite film to form transparent conductive layer surface electrode; and preparing composite film solar battery by (i) using magnetron sputtering device to prepare zinc oxide conductive layer comprising using solid dye-sensitized nanocrystalline-microcrystalline silicon composite film as substrate; using acetone, anhydrous ethanol, and deionized water to ultrasonically clean the substrate; blowing with nitrogen; using ZnO ceramic target doped with 2 wt.% alumina and having purity of 99.99% as target material; controlling distance from the target to substrate at 10 cm; mounting thermocouple near the substrate; vacuum sputtering at 9x 10-4 Pa; using argon (Ar) gas to rinse the chamber; using strong plasma of 1-2 Pa to clean the substrate and target surface; controlling power frequency at 13.56 MHz, power at 100-200 W, and working pressure at 0.3-1.0 Pa; during the entire preparation process, turning the substrate at 10 cycles/minute until plating the ZnO conductive layer on solid dye-sensitized nanocrystalline-microcrystalline silicon composite film to form transparent conductive layer surface electrode; and finally preparing composite film solar battery by taking microcrystalline silicon layer as incident layer; (ii) using three-target common-sputtering high-vacuum magnetron sputtering device to prepare ITO conductive layer comprising using solid dye-sensitized nanocrystalline-microcrystalline silicon composite film as substrate; using acetone, anhydrous ethanol, and deionized water to ultrasonically clean the substrate before preparation and blowing with pure nitrogen; using ITO ceramic target having indium oxide (In2O3):SnO2 mass ratio of 19:1 and purity of 99.99% as target material; controlling diameter of target surface at 60 mm and target thickness at 5 mm; when performing sputtering deposition, using Ar gas as sputtering gas and O2gas as reaction gas; controlling deposition pressure at 1 Pa, substrate temperature at room temperature, film deposition time in 30 minutes, reaction oxygen partial pressure at 5-20%, and sputtering power at 100-200 W; preparing ITO film on substrate through direct current reaction magneto sputtering method until plating the ITO conductive layer on solid dye-sensitized nanocrystalline-microcrystalline silicon composite film to form transparent conductive layer surface electrode; and finally preparing composite film solar battery taking microcrystalline silicon layer as incident layer; or (iii) dissolving tin chloride (SnCl2) in anhydrous ethanol to prepare into 0.1 mol/L SnCl2 anhydrous ethanol solution; based on volume ratio of water (H2O):SnCl2 of 1:0.75, slowly dripping H2O to anhydrous ethanol solution; refluxing for 4 hours at 80 degrees C; adding 0.1 mol/L ammonium fluoride (NH4F) aqueous solution until F:Sn mol ratio of 0.26:1; dripping 0.05 ml formamide to every 100 ml of aqueous of SnCl2+ethanol solution+NH4F; standing the prepared solution for 24 hours; using the solid dye-sensitized nanocrystalline-microcrystalline silicon composite film as substrate; placing in the solution for pulling at 3 mm/minute; drying in vacuum drying box of 100 degrees C for 15 minutes; placing in a muffle furnace to slowly heat to 300 degrees C; repeating the pulling, drying, and slowly heating operations for 4 times; processing in a muffle furnace for 3 minutes until plating the F-doped SnO2 conductive layer on the solid dye-sensitized nanocrystalline-microcrystalline silicon composite film to form transparent conductive layer surface electrode; and preparing composite film solar battery using microcrystalline silicon layer as incident layer.