TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconductor device comprises at least one semiconductor, preferably more than one semiconductor, where at least one semiconductor comprises silicon. The wavelength of the light is in the infrared region, where the wavelength of the light is 4.8 mu m, and the light is polarized at 0 degrees . The undesired chemical species comprises hydrogen, deuterium or a halogen atom. The source of the desired chemical species comprises: a gas that provides the desired chemical species; or a source that provides the desired chemical species mixed with an inert carrier. The desired chemical species comprises at least one deuterium (preferred), fluorine, chlorine, bromine, iodine, nitrogen oxide, nitrogen dioxide, hydrocarbon and/or nitrogen-containing compound.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: In the method the step of exposing the semiconductor device to the source of the desired chemical species and the subjecting the semiconductor device to the light takes place concurrently for at least part of the duration of the two steps. In the method the desired chemical species is desired to be chemically bonded to the semiconductor device in place of the undesired chemical species. The method further comprises: formation of a deuterium reservoir film on the semiconductor device; heating to a temperature appropriate to increase the rate of diffusion of the undesired chemical species out of the semiconductor device and to increase the rate of diffusion of the desired chemical species into the semiconductor device; heating the semiconductor device to a temperature appropriate to assist with the cleavage of chemical bonds between the semiconductor device and the undesired chemical species; heating at 400 degrees C; and the use of a magnetic field, an electrical field and/or a bias to increase the rate of diffusion of the undesired chemical species out of the semiconductor device. In the method the further steps of manufacturing the semiconductor device do not include temperatures which exceed the temperature required to dissociate the chemical bonds between the semiconductor device and the desired species. In the method the semiconductor device is at an intermediate stage of manufacturing.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The source of the desired chemical species or the source of deuterium comprises deuterium-2, deuterium oxide (both preferred), deuterated methane, deuterated chloroform, deuterated dichloromethane, deuterated silane, deuterated trichlorosilane, deuterated dichlorosilane, deuterated ammonia, deuterated hydrochloric acid, hexadeuterated acetone, trideuterioacetonitrile, deuterated methanol, hexadeuteriodimethyl sulfoxide, heptadeuterodimethylformamide, hexadeuterated benzene, dodecane deuterated cyclohexane, deuterated pentadeuteropyridine, a deuterated hydrocarbon, deuterated amine, deuterated nitrogen-containing compound, deuterium radicals, deuterium ions and/or deuterium plasma. The deuterium reservoir film is the source of the desired chemical species. EXAMPLE - No suitable example given.