NOVELTY - Forming (m1) photovoltaic cell involves doping first surface of semiconductive substrate (1) with n-dopant to form first n+ layer (4); doping second surface of the substrate with p-dopant to form p+ layer; applying antireflective coating (6, 8) comprising silicon nitride and silicon oxynitride, to second surface; removing portion of first n+ layer from first surface; doping first surface with n-dopant to form second n+ layer (7), such that a concentration of n-dopant in second n+ layer is variable throughout the first surface; and forming electrical contacts (9) on each surface.    USE - For production of a photovoltaic cell, i.e. a bifacial photovoltaic cell which is useful in photovoltaic array for a power plant, and in an electric device (claimed).    ADVANTAGE - The obtained photovoltaic cell has a short circuit current density of at least 0.033 amperes/cm2; a fill factor of at least 75.5%; and an efficiency of at least 16.7%. The present method produces a photovoltaic cell, by involving a reduced number of procedures in comparison with other methodologies, and hence is cost-efficient and yield-efficient, and resulting in less defects during the manufacturing process. Thus the obtained photovoltaic cell has performance parameters that surpass many other photovoltaic cells. The texturing improves efficiency of photovoltaic cells both by reducing the percentage of light wasted by reflectance from the surface of the cell and by creating a variable concentration of n-dopant. Formation and removal of a first n+ layer improves efficiency both by facilitating the creation of a variable concentration of n-dopant and by beneficially preventing formation of p+ regions within the n+ layer, which would detrimentally increase shunting. The rear antireflective coating both reduces reflectance and protects the p+ layer when forming the second n+ layer. The antireflective coating prevents contact of the n-dopant with the p-doped surface, thus advantageously separating the two types of dopant.    DETAILED DESCRIPTION - Production (m1) of a photovoltaic cell involves doping a first surface of a semiconductive substrate (1) with an n-dopant so as to form a first n+ layer (4) in the substrate; doping a second surface of the substrate with a p-dopant so as to form a p+ layer in the substrate; applying an antireflective coating (6, 8) comprising a substance selected from silicon nitride and silicon oxynitride, to the second surface; removing a portion of the first n+ layer from the first surface, such that a concentration of the n-dopant remaining in the first surface is variable throughout the surface; doping the first surface with n-dopant so as to form a second n+ layer (7), such that a concentration of the n-dopant in the second n+ layer is variable throughout the first surface; and forming electrical contacts (9) on each of the first and second surface. The step of applying the antireflective coating to the second surface is performed prior to or subsequent to the step of removing a portion of the first n+ layer from the first surface, and prior to the step of doping the first surface with the n-dopant so as to form the second n+ layer. The step of removing the portion of the first n+ layer involves texturing the first surface. The method further involves subjecting the antireflective coating to thermal treatment. The thermal treatment increases a refractive index of the antireflective coating; and simultaneously dopes the first surface of the substrate with the n-dopant so as to form the second n+ layer. The first n+ layer has a sheet resistance of less than 30 ohms; and a depth of 0.4-2 mu m. The second n+ layer has a sheet resistance of 30-100 ohms; and a depth of 0.2-0.7 mu m. The antireflective coating has a refractive index of 2.1-2.2; and a graded refractive index of 1.7-2.25 which decreases from the direction of an interface with the substrate. INDEPENDENT CLAIMS are included for the following:    (1) a photovoltaic cell produced by the method (m1) and comprising semiconductive substrate including n+ layer with n-dopant on a first surface and a p+ layer with p-dopant on a second surface, where second surface is coated by the antireflective coating, and electrical contacts attached to each of the first and second surface, and the first surface is textured so as to comprise peaks and troughs, and a concentration of the n-dopant is greater in the peaks of the first surface than in the troughs of the first surface;    (2) a photovoltaic array comprising the photovoltaic cells being interconnected to one another;    (3) a power plant comprising the photovoltaic array; and    (4) an electric device comprising the photovoltaic cell.    DESCRIPTION OF DRAWING(S) - The figure shows a scheme depicting production of a photovoltaic cell.    Semiconducting substrate (1)    Film containing p-dopant (2)    Film containing n-dopant (3)    First n+ layer (4)    Antireflection coating (6, 8)    Second n+ layer (7)    Electrical contacts (9)