NOVELTY - The method for providing a solar cell electrode by electroless deposition, comprises providing a silicon substrate (1) with a silicon and silicon nitride having patterned surface, in-contacting the silicon substrate with an activator, which includes a noble metal or a noble metal compound, a thickener and water, washing the silicon substrate with a cleaning agent, and immersing the silicon substrate in a solution for electroless deposition of nickel for performing electroless deposition and forming a negative nickel electrode on the silicon layer of a first surface of the silicon substrate.    USE - Method for providing a solar cell electrode by electroless deposition to produce solar cell.    ADVANTAGE - The method is capable of easily and economically providing the solar cell electrode with less effort and high efficiency.    DETAILED DESCRIPTION - The method for providing a solar cell electrode by electroless deposition, comprises providing a silicon substrate (1) with a silicon and silicon nitride having patterned surface, in-contacting the silicon substrate with an activator, which includes a noble metal or a noble metal compound, a thickener and water, washing the silicon substrate with a cleaning agent, and immersing the silicon substrate in a solution for electroless deposition of nickel for performing electroless deposition and forming a negative nickel electrode on the silicon layer of a first surface of the silicon substrate. The content of the noble metal or the noble metal compound is 1-500 mg/l. The content of the thickener is 0.05-15 g/l. In the contacting step, the silicon substrate is immersed in the activator or is sprayed with the activator to contact with the activator. In the washing step, the silicon substrate is washed by immersing into the cleaning agent, spraying with the cleaning agent or showering with the cleaning agent. The solution for the deposition of nickel comprises nickel ions (4.5-10.0 g/l), a reduction agent (0.5-40 g/l), a first chelating agent (30-60 g/l), a second chelating agent (5-80 g/l), a stabilizer (0.0005-0.002 g/l) and water. In the immersing step, the content of the chloride ions in the solution is less than 1000 ppm. In the immersing step, the solution for the deposition of the nickel comprises a first reducing agent and a second reducing agent and has a pH-value of 7.0-10.0. In the immersing step, the electroless deposition of nickel is carried out at 40-80 degrees C. The solution comprises a buffer (1-20 g/l), and an accelerator (2-12 g/l). An INDEPENDENT CLAIM is included for an activator for forming an electrode of a solar cell with silicon and silicon nitride having patterned structure.    DESCRIPTION OF DRAWING(S) - The figure shows a cross sectional view of a method for forming an electrode of a solar cell.    Silicon substrate (1)    N-type silicon layer (11)    P-type silicon layer (12)    Silicon nitride layer (13)    Recess. (19)