TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The copper species comprises a copper ion including a cupric ion and/or a cuprous ion. The window layer: is cadmium sulfide, zinc sulfide, zinc selenide, zinc oxide or zinc magnesium oxide; and comprises an n+-type semiconductor characteristic. The sulfide bearing species comprise hydrogen sulfide in fluid phase. The bulk copper indium disulfide comprises a p-type semiconductor characteristic.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: In the method (M1): the subjecting of the copper species is provided by at least one process including spin coating, spraying, spray pyrolysis, pyrolysis, dipping, deposition, sputtering or electrolysis; the bulk copper indium disulfide comprises a thickness of copper sulfide material, where the thickness of copper sulfide material is selectively removed using a solution of potassium cyanide; the forming of the copper layer is provided by a sputtering process or plating process; the copper species compensates for any missing copper in the copper poor surface; the forming of the indium layer is provided by a sputtering process or plating process; the bulk copper indium disulfide is mixed with a copper indium aluminum disulfide or copper indium gallium disulfide; and the thermal treatment process of the copper poor surface comprises a temperature at 100-500 degrees C. The method (M1) further comprises introducing an indium species in the window layer to cause formation of an n+-type semiconductor characteristic. In the method (M2): compensating is provided by at least one process including spin coating, spraying, spray pyrolysis, pyrolysis, dipping, deposition, sputtering or electrolysis; and the copper indium disulfide material after compensation has a p-type semiconductor characteristic. The method (M2) further comprises: subjecting the copper poor copper indium disulfide material to a thermal treatment process at 100-500 degrees C; forming a transparent conductive oxide overlying a portion of the window layer; and introducing an indium species in the window layer to cause formation of an n+-type semiconductor characteristic. EXAMPLE - No suitable example given.