NOVELTY - The device has an electrode (110) placed on a substrate (100) i.e. flexible substrate, and another electrode (120) placed opposite to the former electrode in which light is incident on. A unit cell (130) is placed between the former electrode and the latter electrode, and includes an intrinsic semiconductor layer (133). The semiconductor layer includes crystalline silicon grains (133b) that make the surface of the intrinsic semiconductor layer toward the latter electrode textured. Another unit cell (140) is placed between the former unit cell and the latter electrode.    USE - N-i-p type photovoltaic device. Can also be used for a double-junction tandem photovoltaic device, an intermediate cell or a bottom cell of a triple-junction tandem photovoltaic device, a bulk-type silicon photovoltaic device, and a thin-film silicon photovoltaic device.    ADVANTAGE - The light having a short wavelength is reflected to the latter unit cell, so that photoelectric conversion efficiency of the photovoltaic device is improved. The hole inside the intrinsic semiconductor layer is enhanced by removing the amorphous silicon based material, so that open circuit voltage of the photovoltaic device and the photoelectric conversion efficiency of the photovoltaic device can be improved. The amount of light absorbed by the intermediate reflector is increased according to the increase of thickness of the intermediate reflector, thus preventing processing time from being increased.    DETAILED DESCRIPTION - The flexible substrate is a metal substrate made of stainless steel or aluminum foil, or a plastic substrate made of Polyethylene Naphthalate (PEN) or Poly Ethylene Terephthalate (PET). The intrinsic semiconductor layer of the latter unit cell is made of hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, hydrogenated amorphous silicon oxide, hydrogenated proto-crystalline silicon or hydrogenated protocrystalline silicon having a multi-layer structure. An INDEPENDENT CLAIM is also included for a method for manufacturing an n-i-p type photovoltaic device.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an n-i-p type photovoltaic device.    Substrate (100)    Electrodes (110, 120)    Unit cells (130, 140)    Intrinsic semiconductor layer (133)    Crystalline silicon grains (133b)