NOVELTY - Manufacturing photovoltaic device involves loading a substrate (1310) into load lock station (1306), where substrate includes a surface region (1311); transferring the substrate in controlled ambient to a process station; using a physical deposition process in the process station; transferring substrate in controlled ambient to second process station; using second physical deposition process in the second process station to cause formation of first p-type absorber material; repeating transferring and processing until all thin film materials of the devices formed.    USE - For manufacturing photovoltaic device (claimed).    ADVANTAGE - The formation of transparent conduction oxide layer (TCO) is followed a certain predetermined pattern for effectively carried out the function of top electrode layer for the photovoltaic module with considerations of maximizing the efficiency of the thin film based photovoltaic modules. The TCO can act as a window layer, which eliminates a separate window layer.    DETAILED DESCRIPTION - Manufacturing photovoltaic device involves loading a substrate (1310) into a load lock station (1306), where the substrate includes a surface region (1311); transferring the substrate in a controlled ambient to a process station; using a physical deposition process in the process station to cause formation of a conductor layer overlying the surface region of the substrate; transferring the substrate in a controlled ambient to a second process station; using a second physical deposition process in the second process station to cause formation of a first p-type absorber material, the first p-type absorber material comprising at least a first metal chalcogenide material overlying the first conductor layer, where the first p-type absorber material comprises first bandgap range and a first thickness range; transferring the substrate in a controlled ambient to a third process station; using a third physical deposition process in the third process station to cause formation of a first n-type window layer, where the first n-type window layer comprises at least a second metal chalcogenide material overlying the first p-type absorber material; transferring the substrate in a controlled ambient to fourth process station; using a fourth physical deposition process in fourth process station to cause formation of an n++ type semiconductor material; transferring the substrate in a controlled ambient to a fifth process station; using a fifth physical deposition process in the fifth process station to cause formation of an p++ type semiconductor material, the p++ semiconductor material and the n++ semiconductor material forming a tunneling junction layer; transferring the substrate in a controlled ambient to a sixth process station; using a sixth physical deposition process in the sixth process station to cause formation of a second p-type absorber material, where the second p-type absorber material comprises at least a third metal chalcogenide material overlying the tunneling junction layer, the second p-type absorber material comprises second bandgap range and a second thickness range; transferring the substrate in a controlled ambient to a seventh process station; using a seventh physical deposition process in the seventh process station to cause formation of a second n-type window layer comprising a fourth metal chalcogenide material overlying the second p-type absorber material; transferring the substrate in a controlled ambient to an eighth process station; and using an eighth physical deposition process in the eighth process station to cause formation of a second conductor layer.    DESCRIPTION OF DRAWING(S) - The figure shows schematic view of a system with multi-chamber configuration.    System (1300)    Heaters (1305)    Load lock station (1306)    Sulfur bearing species (1308)    Substrate (1310)    Electrode layer (1320)    Copper-bearing layer (1330)    Indium layer (1340)