NOVELTY - A sputter target structure for depositing semiconducting chalcogenide films, comprises a target body having a target body composition that comprises complex of copper selenide sulfide telluride, where the total amount of selenide, sulfide, and telluride phases in the target body composition comprise less than 50 volume% of the target body composition.    USE - As sputter target structure for depositing semiconducting chalcogenide films (claimed); for manufacturing photovoltaic devices; and as low melting point sputter targets for depositing semiconducting chalcogenide films for the photovoltaic devices such as solar cells.    ADVANTAGE - The sputter target composition has a purity of at least approximately 2N7, gaseous impurities less than approximately 500 parts-per-million (ppm) for oxygen (O), nitrogen (N), and hydrogen (H) individually, a carbon (C) impurity less than approximately 500 ppm, and a density of at least 95% of a theoretical density for the sputter target composition. The sputter target has adequate density in order to minimize arcing and defect generation during the deposition process.    DETAILED DESCRIPTION - A sputter target structure for depositing semiconducting chalcogenide films, comprises a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x (I), where the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume% of the target body composition.    x= greater than or equal to approximately 0.5;    y= approximately 0 to approximately 1;    z= approximately 0 to approximately 1.    INDEPENDENT CLAIMS are included for the following:    (1) a method (M1) involving providing at least one ingot that collectively contain materials for producing a sputter target having a sputter target composition that comprises (I), where the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume% of the target body composition; melting the at least one ingot; pouring the melted materials of the at least one ingot into a mold; and controlling a cooling rate of the materials poured into the mold to control solidification of the materials; and    (2) a method (M2) involving providing at least one powder that collectively contain materials for producing a sputter target having a sputter target composition that comprises (I), where the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume% of the target body composition; melting the at least one powder; pouring the melted materials of the at least one powder into a mold; and controlling a cooling rate of the materials poured into the mold to control solidification of the materials.