TECHNOLOGY FOCUS - INDUSTRIAL STANDARDS - Preferred Components: The microstamp comprises at least one hole to ensure that the etching chemistry reaches the substrate surface and etch products are easily removed. The bath comprises at least one alkali hydroxide salt and optionally at least one alcohol. The bath comprises nitric acid, hydrofluoric acid, and optionally acetic acid. The etchant composition comprises at least one alkaline component, at least one surfactant, at least one metal salt, and water, where the etchant composition is substantially devoid of any low boiling point alcohol components. The etchant composition comprises at least one amine carboxylate, at least one surfactant, at least one metal salt, and water, where the etchant composition is substantially devoid of any low boiling point alcohol components. The alcohol components comprise any straight-chained or branched 1-6C alcohols. The alkaline component comprises an alkali hydroxide, carbonates, hydrogen carbonates, quaternary ammonium hydroxides, or any combination. The alkaline component comprises sodium hydroxide (NaOH), potassium hydroxide (KOH), rubidium hydroxide (RbOH), cesium hydroxide (CsOH), sodium carbonate (Na2CO3), sodium bicarbonate (NaHCO3), potassium carbonate (K2CO3), potassium bicarbonate (KHCO3), NR4OH, or any combination, where R can be the same as or different from one another and is selected from 1-6C alkyls, 6-10C aryl, and combinations. The alkaline component comprises NaOH, KOH, RbOH, CsOH, or combinations. The alkaline component comprises NaOH, KOH, or a combination of NaOH/KOH. The amine carboxylate comprises amine gallate or amine salicylate. The metal salt comprises a Group II metal, a Group IV metal, copper, lanthanum, or combinations. The metal salt comprises calcium hydroxide (Ca(OH)2), strontium hydroxide (Sr(OH)2), barium hydroxide (Ba(OH)2), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), calcium nitrate (Ca(NO3)2), strontium nitrate (Sr(NO3)2), barium nitrate (Ba(NO3)2), copper sulfate pentahydrate (CuSO4.5H2O), calcium sulfate (CaSO4), strontium sulfate (SrSO4), barium sulfate (BaSO4), copper hydroxide (Cu(OH)2), sodium germanium oxide (Na2(GeO3)), sodium stannate (Na2(SnO3)), sodium silicate (Na4(SiO4)), potassium germanium oxide (K2(GeO3)), potassium silicate (K4(SiO4)), potassium stannate (K2(SnO3)), lanthanum chloride heptahydrate (LaCl3.7H2O), lanthanum sulfate (La2(SO4)3) and its hydrates, tin chloride pentahydrate (SnCl4.5H2O), and combinations. The metal salt comprises CaOH, La2(SO4)3 and its hydrates, or BaOH. The surfactant comprises nonionic, anionic, cationic, and/or zwitterionic surfactants. Preferred Parameters: In the method, vibration and/or pulsing is used. A potential is placed on the microstamp and the substrate to enhance the etching rate. The microstamp includes a regular or irregular array of shapes. The shapes include at least one shape selected from cubes, tetrahedrons, octahedrons, dodecahedron, icosahedron, triangular prisms, cuboids, rectangular prisms, pentagonal prisms, hexagonal prisms, octagonal prisms, triangularly shaped pyramids, square shaped pyramids, pentagonal shaped pyramids, hemispherical shapes, other spherical-based shapes, and ellipsoidal-based shapes. The substrate is rinsed to remove the bath and any reaction products. The bath etches the substrate anisotropically. The substrate is single crystal silicon. The bath etches the substrate isotropically. The substrate is polycrystalline silicon, where the substrate is introduced to a mixture comprising an oxidant and an acid fluoride. Also, at least one surfactant is added to the bath. The pH is greater than 12. Preferred Method: The method further comprises semiconductor material. Alternatively, introducing the nanometer scale surface roughness to the substrate surface comprises: (a) depositing nanoparticles on the substrate surface; (b) introducing metal induced pitting to a substrate surface; (c) using remote plasma source (RPS) or reactive ion etching (RIE); or (d) immersing a microstamp and a substrate to be etched together in a bath and pressing the microstamp to the substrate to etch nanometer scale features into the substrate surface. The nanoparticles are selected from but not limited to silica, cadmium telluride (CdTe), cadmium selenide (CdSe), other chalcogenides, and combinations. The nanoparticles are deposited in-situ or ex-situ using solution-based or gas phase deposition methods. The noble metal nanoparticles are deposited on the substrate surface using spin-on coating instead of gas phase deposition. The non-noble metal nanoparticles are deposited on the substrate surface using solution-based deposition processes or gas phase deposition. The nanometer scale roughness is achieved by metal inducing catalysis at the substrate surface in the presence of a catalysis composition. The catalysis composition comprises an acid fluoride and an oxidant. The metal induced pitting (MIP) is achieved by introducing the substrate surface to a MIP mixture comprising a metal salt and a fluoride based etchant or an alkali hydroxide. The fluoride based etchant comprises an acid fluoride. The metal salt comprises at least one metal ion selected from copper (II), gold (I), silver (I), Pt(II), and Pd (II). The method comprises introducing a micron-scale roughness to the substrate surface before introducing the nanometer scale surface roughness to the substrate surface. In the controlled texturing of substrates, the gas phase etching comprises the introduction of xenon fluoride (XeF2) to the substrate. Introducing micron-scale surface roughness to semiconductor material further comprises rinsing the semiconductor material following contact with the etchant composition.