TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The carbon-based material is at least one comprising a carbon-containing polymer, gaseous carbon-based material, amorphous carbon or organometallic compound. The ceramic layer is an oxide layer. The substrate comprises silicon, glass, gallium nitride, plastic, polyethylene terephthalate, polyester sulfone, polyethylene naphthalate, nickel, copper, tungsten, iron, cobalt and/or silica. The graphitization catalyst layer comprises at least one of nickel, cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, thallium, titanium, tungsten, uranium, vanadium, zirconium, ruthenium or iridium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The process further comprises: patterning the carbon-based material on the substrate; patterning the graphitization catalyst layer on the substrate; forming a ceramic layer on the graphitization catalyst layer; and patterning the ceramic layer. The process further comprises at least partially removing the graphitization catalyst layer by acid-treatment after the forming of the graphene, where the step of at least partially removing the graphitization catalyst layer comprises forming a pattern on the graphitization catalyst layer by selectively removing a portion of the graphitization catalyst layer. In the process, a pattern layer is disposed on one surface of the substrate before the disposing the carbon-based material on the substrate. Preferred Components: The graphene has a shape which is the same as a shape of the pattern layer. In the graphene base, a ratio of a peak D-band intensity to a peak G-band intensity or a ratio of an area of a D-band peak to an area of a G-band peak of the graphene is less than or equal to 0.5 in a Raman spectrum of the graphene. EXAMPLE - A 3 centimeter (cm) by 3 cm silicon substrate coated with 100 nm silicon dioxide was processed with ultraviolet/ozone for 30 minutes, and then impregnated for 20 minutes in an octadecyl trichlorosilane (50 mM) in hexane solution under a nitrogen atmosphere. Next, the silicon substrate was removed from the octadecyl trichlorosilane hexane solution, and the residue of it was cleaned with hexane, and then the silicon substrate was baked for 20 minutes at 120 degrees C. The silicon substrate was put into a toluene solution and then processed for 3 minutes with ultrasonic waves to remove materials aggregated on the surface of the silicon substrate to obtain a single layer of a self-assembled layer. Then, a 300 nm thick nickel layer was formed on the silicon substrate by depositing nickel using thermal-evaporation. The silicon substrate, on which octadecyl chlorosilane and the nickel layer were formed, was thermally-treated in a furnace for 1 hour at 900 degrees C under a nitrogen atmosphere to form graphene on the silicon substrate, to obtain a graphene base.