TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: In fabricating monolithically-integrated optoelectronic modules, the cell-to-cell via holes (155) are drilled to extend through the back-contact components (124, 126). The method further comprises placing at least one electrical conductor that forms a busbar (182, 188) using at least one conductive adhesive component (172, 178) so that an electrical path is established between the busbar (182, 188) and at least one the back-contact component (122, 128), the surface metallization (136), and/or the front-contact component (156); drilling at least one first via hole (153), herein called busbar-to-back-contact via hole (153), so as to expose part of at least one of the back-contact components (122); placing at least one first electrical conductor forming a first busbar (182) using at least one conductive adhesive component (172) so that an electrical path is established between the first busbar (182) and the back-contact component (122); drilling at least one second via hole (157), herein called busbar-to-front-contact via hole (157), passing through at least one of the front-contact components (158) and such that none of the busbar-to-front-contact via holes (157) passes through back-contact components (122) exposed by the busbar-to-back-contact via holes (153); and placing at least one second electrical conductor forming a second busbar (188) using at least one conductive adhesive component (178) so that an electrical path is established between the second busbar (188) and the front-contact component (158); depositing at least one metallized grid component (164, 166, 168) made of at least one metallized trace onto the front-contact components (154, 156, 158) of the substrate configuration, where the metallized grid component (164, 166, 168) extends from at least one the via hole (155, 157); and filling at least one of the via holes (153, 155, 157) with electrically conductive material. Preferred Apparatus: The monolithically-integrated optoelectronic module apparatus (100) comprises at least two series-interconnected optoelectronic components (104, 106, 108), such as photovoltaic, diode, or light-emitting diode components, the optoelectronic module comprising an electrically insulating layer (110) positioned either as a substrate under, or as a superstrate on top of, the following stack of layers (a), (b), (c); (a) a layer comprising at least one first and at least one second electrically conductive front-contact components (152, 154, 156, 158), the first and second front-contact components being separated by a groove (151) making at least one first and at least one second front-contact components (152, 154, 156, 158) that are electrically separate; (b) a layer comprising at least one semiconductive optoelectronically active layer (130, 140) where at least one of the semiconductive layers (130) is for example made of CdTe or of an ABC2 material, where A represents elements in group 11 of the periodic table of chemical elements as defined by the International Union of Pure and Applied Chemistry including Cu and Ag, B represents elements in group 13 of the periodic table including In, Ga, and Al, and C represents elements in group 16 of the periodic table including S, Se and Te; (c) a layer comprising at least one first and at least one second electrically conductive back-contact components (122, 124, 126, 128) deposited onto the electrically insulating layer (110) where the first and second back-contact components are separated by a back-contact groove (121) making the first and second back-contact components (122, 124, 126, 128) electrically separate, thus realizing first and second separate optoelectronic components (104, 106) each comprising a stack of the front-contact components, at least one the semiconductive layer, and the back-contact component; the optoelectronic module further comprising at least one via hole (155) passing through at least one of the first front-contact components (154,156) and the semiconductive layers (130, 140), thus exposing part of at least one the second back-contact components (124,126), and where the surface (134, 136) of the via hole at the level of the semiconductive optoelectronically active layers (130) has a compositional change through permanent metallization of metal elements contained for example in CdTe or in the ABC2 material of the semiconductive optoelectronically active layers (130), such permanent metallization being obtainable by local heating produced by drilling of the via hole (155), the permanent metallization establishing an electrical path between the first front-contact component (154,156) and the second back-contact component (124,126) and realizing a series-interconnection between a first optoelectronic component (104) and a second optoelectronic component (106). The via holes (155) extend through the back-contact components (124, 126), where the via holes (155) are positioned in at least one row parallel to the back-contact groove (121) such that the closest row is at a distance of at least 5 micrometers, more preferably 50 micrometers from the back-contact groove (121). Also, at least one via hole (155) passing through at least one of the first front-contact components (154,156) is shaped as a line segment located at a distance of at least 50 micrometers from the front-contact groove (151), and such that at least one second back-contact component comprises a finger-shaped extension passing under the first front-contact component and reaching the via hole (155) so that at least one deported series-interconnection is realized. The apparatus further comprises at least one metallized grid component (164, 166, 168) made of at least one metallized trace deposited onto at least one the front contact component (155, 156, 158), the metallized trace extending from at least one via hole (155, 157), where at least one of the metallized grid components (164, 166, 168) presents a pattern where one of the via holes (155, 157) is located centrally within the pattern. At least one of the via holes (153, 155, 157) is filled with electrically conductive material contributing to the electrical contact between at least one of the front-contact components (152, 154, 156, 158) and the back-contact components (122, 124, 126, 128). The apparatus as well comprises: at least one busbar-to-back-contact via hole (153) exposing part of at least one of the back-contact components (122); at least one first electrical conductor forming a first busbar (182) connected by at least one conductive adhesive component (172) so that an electrical path is established between the first busbar (182) and the back-contact component (122); at least one busbar-to-front-contact via hole (157) passing through at least one of the front-contact components (158) such that none of the busbar-to-front-contact via holes (157) passes through back-contact components (122) exposed by the busbar-to-back20 contact via holes (153); and at least one second electrical conductor forming a second busbar (188) connected by at least one conductive adhesive component (178) so that an electrical path is established between the second busbar (188) and the front-contact component (158). The apparatus is encapsulated within at least one front sheet (190) and at least one back sheet (192), the front sheet (190) being preferably of glass or, more preferably, of thermoplastic polymer material.