NOVELTY - Growing method for film of solar cell, comprises e.g. sending silicon sheet to an oxidizing furnace and heating to 800-1000 degrees C and passing nitrogen, closing nitrogen and passing oxygen, then passing tricarboxylic acid cycle (TCA) and water vapor, and growing oxide films, then closing TCA and the vapor, passing oxygen, closing oxygen and passing nitrogen, removing water in the oxide film, cooling it, passing hydrogen and nitrogen synthesized gas to anneal, then closing the synthesized gas, passing nitrogen to blow dust, and taking out the silicon sheet and carrying out post-processing.    USE - Used as the growing method for film of solar cell.    ADVANTAGE - The method: has fast growth speed of oxide film, high product yield with good quality, and excellent passivation performance; produces the oxide film with low stress and low defects; and carries out oxidation and annealing processes in the same equipment.    DETAILED DESCRIPTION - Growing method for film of solar cell, comprises (a) sending silicon sheet whose surface is treated conventionally with an oxidizing furnace tube at low temperature, then (b) heating the furnace tube to 800-1000 degrees C and passing nitrogen, where the flow of the nitrogen is 2-20 l/minute, (c) closing nitrogen and passing oxygen after the temperature is stable, where the flow of the oxygen is 2-20 l/minute, then passing tricarboxylic acid (TCA) or dichloroethane (DCE) gas after 1-3 minutes, where the flow of the gas is 0.2-2 l/minute, and passing the water vapor at the same time, where the flow of the gas is 0.5-5 l/minute, passing oxygen for 3-100 minutes and growing the oxide films with different thicknesses, then (d) closing TCA or DCE gas, closing the vapor, passing the oxygen for 1-5 minute based on a flow of 2-20 l/minute, (e) closing oxygen, passing nitrogen based on a flow of 2-20 l/minute, taking away the water in the oxide film by nitrogen at high temperature, (f) cooling to 300-500 degrees C, passing hydrogen and nitrogen synthesized gas to anneal for 5-30 minutes based on a gas flow of 1-10 l/minute, and (g) closing the synthesized gas, passing nitrogen to blow dust for 2-10 minutes, where the flow of nitrogen is 5-10 l/minute, and (h) taking the silicon sheet out of the furnace and carrying out post process of the cell.