NOVELTY - The capacitively and inductively coupled plasma type apparatus (110) comprises a process chamber (112) providing a reaction space by a combination of a lid and a body, a susceptor that is provided in the reaction space and has a substrate, plasma source electrodes (114) over the reaction space, first lower protruding portions under the lid, first gas injecting units corresponding to the plasma source electrodes, second gas injecting units alternately disposed with the first gas injecting unit, and insulating plates (116) between the electrodes and the lid.    USE - The capacitively and inductively coupled plasma type apparatus is useful for processing a substrate, which is useful for a semiconductor device, a display device and a solar cell.    ADVANTAGE - The capacitively and inductively coupled plasma type apparatus is capable of uniformly processing the substrate without standing wave effect thus improving the efficiency of the semiconductor device, the display device and the solar cell.    DETAILED DESCRIPTION - The capacitively and inductively coupled plasma type apparatus comprises a process chamber (112) providing a reaction space by a combination of a lid and a body, a susceptor that is provided in the reaction space and has a substrate, plasma source electrodes (114) over the reaction space, first lower protruding portions under the lid, first gas injecting units corresponding to the plasma source electrodes, second gas injecting units alternately disposed with the first gas injecting unit, insulating plates (116) between the electrodes and the lid, second lower protruding portions under the insulating plates, and antennas over the insulating plates. The first gas injecting units are formed in the lid, the insulating plates, the electrodes and the second lower protruding portions, and the second gas injecting units are formed in the lid and the first lower protruding portions. The first and second gas injecting units comprise: a sub gas supplying pipe for supplying a process gas and a process gas composition; a gas inlet pipe connected to the sub gas supplying pipe and formed in the lid and the insulating plates; an inner connecting pipe connected to the gas inlet pipe; and injecting pipes branching out from the inner connecting pipes. The gas inlet pipe comprises: an insulating pipe and a first vertical inlet pipe connected to the sub gas supplying pipe; a connecting pipe connected to the insulating pipe; a horizontal inlet pipe connected to the first vertical inlet pipe; and a second vertical inlet pipe connected to the horizontal inlet pipe. Each of the plasma source electrodes has a rectangular shape, a longer side and a shorter side, and the inner connecting pipe extends along two directions under the gas inlet pipe to be parallel to the longer side and perpendicular to the gas inlet pipe. The injecting pipes comprises: vertical injecting pipes connected to the inner connecting pipe; and slant injecting pipes branching out from the vertical injecting pipes. The slant injecting pipes are symmetrically disposed with respect to each of the vertical injecting pipes. Each of the first protruding portions includes an upper protruding portion vertically extending from the lid, and a lower protruding portion expanding from the upper protruding portion, where the upper protruding portion has the same thickness as each of the insulating plates. The first and second gas injecting units supply first and second process gases and first and second process gas compositions. Each of the plasma source electrodes and the first protruding portions has a half circle and a half ellipse in a cross-sectional view. The insulating plates are configured to seal open portions of the lid. The lid includes upper protruding portions alternately disposed with the insulating plates, and supporting portions extending from the upper protruding portions and supporting the insulating plates. The sub gas supplying pipe is inserted into an edge region of each of the insulating plates spaced apart from a central region of each of the insulating plates corresponding to each of the antennas. The antennas are used as a plasma source electrode for a radio frequency power, and the lid is used as a plasma ground electrode.    DESCRIPTION OF DRAWING(S) - The diagram shows a cross-sectional view of an apparatus for processing a substrate.    Apparatus (110)    Process chamber (112)    Plasma source electrodes (114)    Insulating plates (116)    Gate. (130)