TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: In the device, the laser processed semiconductor region has a substantially textured surface with surface features having a size selected from micron-sized, nano-sized, and combinations. The laser processed semiconductor region is disposed on the crystalline semiconductor layer between the first doped semiconductor layer and the crystalline semiconductor layer. Also, the laser processed semiconductor region is disposed on the crystalline semiconductor layer between the second doped semiconductor layer and the crystalline semiconductor layer. The laser processed semiconductor region comprises: a first laser processed semiconductor region disposed on the crystalline semiconductor layer between the first doped semiconductor layer and the crystalline semiconductor layer; and a second laser processed semiconductor region disposed on the crystalline semiconductor layer between the second doped semiconductor layer and the crystalline semiconductor layer. The laser processed semiconductor region is formed within the crystalline semiconductor layer. At least one of the first doped semiconductor layer and the second doped semiconductor layer is a member selected from amorphous silicon, amorphous germanium, and combinations and alloys; and at least one of the first doped semiconductor layer and the second doped semiconductor layer is a crystalline semiconductor layer. The device further comprises an i-type layer disposed between the crystalline semiconductor layer and at least one of the first doped semiconductor layer and the second doped semiconductor layer, where the i-type layer is amorphous; a first electrical contact electrically coupled to the first doped semiconductor layer and a second electrical contact electrically coupled to the second doped semiconductor layer, the first electrical contact and the second electrical contact being same side contacts; and a first electrical contact electrically coupled to the first doped semiconductor layer and a second electrical contact electrically coupled to the second doped semiconductor layer, the first electrical contact and the second electrical contact being opposite side contacts. The laser processed region has been formed in a substantially oxygen-depleted environment. Moreover, the device comprises a carrier substrate coupled to either the first semiconductor layer or the second semiconductor layer, where the carrier substrate includes a member selected from glass, polymer materials, ceramic materials, metal foils, and combinations, and where the carrier substrate is a flexible substrate. The doped semiconductor layer is a member selected from amorphous silicon, amorphous germanium, and combinations and alloys, where at least a portion of the crystalline semiconductor layer is doped. Alternatively, the heterojunction photovoltaic device comprises: a crystalline semiconductor layer; a doped semiconductor layer coupled to the crystalline semiconductor layer to form a junction; and a laser processed semiconductor region coupled to the crystalline semiconductor layer. Preferred Method: Making the heterojunction photovoltaic device further comprises annealing the crystalline semiconductor layer and the laser processed region. The crystalline semiconductor layer has a low oxygen content, and the laser processing and the annealing are performed in a substantially oxygen-depleted environment. Annealing of the crystalline semiconductor layer and the laser processed region is performed to a temperature of 300-1100 degrees C. The laser processing includes irradiating the crystalline semiconductor layer with laser radiation to form a substantially textured surface with surface features having a size selected from micron-sized, nano-sized, and combinations. Irradiating the crystalline semiconductor layer includes exposing the laser radiation to a dopant such that the irradiation incorporates the dopant into the crystalline semiconductor layer. The laser processing is performed using a pulsed laser including a member selected from a femtosecond laser, a picosecond laser, a nanosecond laser, and combinations. The doping of at least one of the first semiconductor layer and the second semiconductor layer occurs in situ during deposition. The method as well comprises forming an i-type layer between the first semiconductor layer and the second semiconductor layer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The crystalline semiconductor layer includes a member selected from group IV materials, compounds and alloys comprising materials from groups II and VI, compounds and alloys comprising materials from groups III and V, and combinations. The crystalline semiconductor layer is silicon. The crystalline semiconductor layer is a member selected from nanocrystalline, microcrystalline, multicrystalline, and combinations. The crystalline semiconductor layer is monocrystalline. The crystalline semiconductor layer includes a member selected from float zone (FZ), Magnetic Czochralski (MCZ), Czochralski (CZ), deposited semiconductor material, and combinations. Preferred Parameters: The crystalline semiconductor layer has a thickness of 0.1-50 mu m, preferably less than or equal to 10 mu m. EXAMPLE - No example given.