NOVELTY - The method comprises providing (S1) two aperture elements for forming a gap in-between the elements, providing (S2) a molten alloy comprising the semiconductor material in the gap between the two aperture elements, providing (S3) a gaseous precursor medium for delivering the semiconductor material in the vicinity of the molten alloy, providing (S4) a nucleation crystal in the vicinity of the molten alloy, cutting the nucleation crystal along the (111) growth direction, and bringing in contact with the nucleation crystal and the molten alloy.    USE - The method is useful for producing a mono-crystalline sheet of a semiconductor material, where: the mono-crystalline sheet is useful in a solar cell arrangement (all claimed), for large displays, sensors and nano-technological systems and is a mono-crystalline silicon sheet; and the semiconductor material such as silicon, germanium, indium- or gallium arsenide is useful for photovoltaic applications.    ADVANTAGE - The method is capable of effectively, continuously and rapidly producing the thin mono-crystalline sheet with high performance.    DETAILED DESCRIPTION - The method comprises providing (S1) two aperture elements for forming a gap in-between the elements, providing (S2) a molten alloy comprising the semiconductor material in the gap between the two aperture elements, providing (S3) a gaseous precursor medium for delivering the semiconductor material in the vicinity of the molten alloy, providing (S4) a nucleation crystal in the vicinity of the molten alloy, cutting the nucleation crystal along the (111) growth direction, bringing in contact with the nucleation crystal and the molten alloy, positioning the aperture elements and the molten alloy such that the molten alloy is held between the aperture elements by surface tension, retracting (S5) the nucleation crystal gradually from the molten alloy, heating the aperture elements, providing a doping gas, providing an etching gas, and winding the mono-crystalline silicon sheet on a roll. The semiconductor material is released from the gaseous precursor medium comprising the semiconductor material into the molten alloy for supersaturating the molten alloy with the semiconductor material. The method is executed under a protective atmosphere. The molten alloy is a eutectic alloy. The aperture elements have a temperature of 350-1000 degrees C. The gap between the two aperture elements is an elongated slit. The gaseous precursor medium is provided on a first side of the aperture elements with respect to the molten alloy. The nucleation crystal is provided on a second side of the aperture elements with respect to the molten alloy. INDEPENDENT CLAIMS are included for:    (1) mono-crystalline silicon sheet;    (2) a solar cell arrangement comprising a mono-crystalline sheet; and    (3) a device for producing a mono-crystalline semiconductor sheet.    DESCRIPTION OF DRAWING(S) - The figure shows a block diagram of a method for producing a monocrystalline silicon sheet.    Providing two aperture elements for forming a gap in-between the elements (S1)    Providing a molten alloy comprising a semiconductor material in the gap (S2)    Providing a gaseous precursor medium for delivering the semiconductor material in the vicinity (S3)    Providing a nucleation crystal in the vicinity of the molten alloy (S4)    Retracting the nucleation crystal gradually from the molten alloy. (S5)