NOVELTY - Forming grid cathode on silicon wafer front-side having p/n-type regions, p-n junction and antireflective coating (ARC) layer on front-side, involves applying/drying metal paste of organic vehicle/inorganic content of electrically conductive metal powder (90-98 wt.%) such as nickel/copper/silver, and glass frit (0.25-8 wt.%) selected from glass frits having lead oxide (47.5-64.3 wt.%), silica (23.8-32.2 wt.%), alumina (3.9-5.4 wt.%), titanium dioxide (2.8-3.8 wt.%) and boron trioxide (6.9-9.3 wt.%) on ARC layer; firing; and depositing silver by subjecting wafer to light-induced plating.    USE - For forming grid cathode on front-side of silicon wafer having p-/n-type regions, p-n junction and antireflective coating (ARC) layer on front-side, used in silicon solar cells (claimed), which are used as electric power generating solar cells.    ADVANTAGE - The electrical efficiency of silicon solar cell provided with a front-side grid cathode made by applying and firing a seed grid cathode and depositing silver by LIP on it is further improved by using electrically conductive metal paste used for applying the seed grid cathode containing glass frit having a certain composition. The method provides improvement of the electrical efficiency of silicon solar cells provided with a front-side grid cathode made by the process. The glass frit composition allows for a well-balanced ratio between the deposition of silver and dissolution of glass during the LIP process step with the result of forming a grid cathode with a comparably dense structure with good electrical conductivity and low contact resistance with the silicon substrate.    DETAILED DESCRIPTION - Production of a grid cathode on the front-side of a silicon wafer having a p-type region, an n-type region, a p-n junction and an antireflective coating (ARC) layer on the front-side, involves providing a silicon wafer having an ARC layer on its front-side; applying and drying a metal paste on the ARC layer on the front-side of the silicon wafer in a front-side grid electrode pattern; firing the metal paste to form a seed grid cathode; and depositing silver on the seed grid cathode by subjecting the silicon wafer provided with the seed grid cathode to a light-induced plating (LIP) process, where the metal paste comprises an organic vehicle and an inorganic content containing 90 to 98 wt.% of at least one electrically conductive metal powder selected from nickel, copper and silver, and 0.25 to 8 wt.% of at least one glass frit selected from glass frits containing 47.5 to 64.3 wt.% of lead oxide (PbO), 23.8 to 32.2 wt.% of silica (SiO2), 3.9 to 5.4 wt.% of alumina (Al2O3), 2.8 to 3.8 wt.% of titanium dioxide (TiO2) and 6.9 to 9.3 wt.% of boron trioxide (B2O3). INDEPENDENT CLAIMS are included for the following:    (1) front-side grid cathode produced by the process; and    (2) a silicon solar cell comprising a silicon wafer having an ARC layer on its front-side and the front-side grid cathode.