NOVELTY - Organic semiconducting composition (C1) comprises essentially N,N-dicycloalkyl-substituted naphthalene diimide and polymer additive containing an insulating or semiconducting polymer having a permittivity of at least 1.5 to 5 at 1000 Hz.    USE - In article; and in thin-film, field-effect transistor which is used in electronic device selected from integrated circuits, active-matrix display, solar cells (claimed), organic light emitting diode, photodetector, sensor, logic circuit, memory element, capacitor or photovoltaic cell.    ADVANTAGE - The thin film of the organic semiconducting composition exhibits a field electron mobility of greater than 0.001 cm2/V.seconds, or an on/off ratio of a source/drain current of at least 104; and is less susceptible to the ambient and minimizes the deterioration of electronic properties over time. The organic semiconductor composition, when used in the form of n-channel layer, exhibits high performance under inert conditions and in air without the need for special chemical underlayers.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) an article comprising a support having a dry organic semiconducting layer containing the composition (C1) disposed on it; and    (2) a thin-film, field-effect transistor (T1) comprising a dielectric layer, a gate electrode, a source electrode, a thin film of the organic semiconducting composition (C1), and a drain electrode, where the dielectric layer, the gate electrode, the thin film of organic semiconductor material, source electrode, and the drain electrode are in any sequence as long as the gate electrode and thin film of the organic semiconducting composition both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of the organic semiconducting composition; and    (3) an electronic device (D1) selected from integrated circuits, active-matrix display, and solar cells comprising a multiplicity of thin-film transistors (T1).