NOVELTY - The method of manufacturing a solar cell from a p-doped or n-doped silicon substrate (1) that has a first major surface serving as a light incident side and as a second major surface (3), comprises depositing an aluminum thin film (7) on the second major surface, applying a thin dielectric layer such as an oxide and/or a nitride on the thin film to prevent oxidation of the aluminum thin film in air, applying and drying a dielectric, glass-forming paste on the second major surface to cover the aluminum thin film, and heating and/or sintering of the paste on the second major surface.    USE - The method is useful for manufacturing a solar cell from a p-doped or n-doped silicon substrate.    ADVANTAGE - The method is capable of economically and rapidly manufacturing the solar cell with high efficiency.    DETAILED DESCRIPTION - The method of manufacturing a solar cell from a p-doped or n-doped silicon substrate (1) that has a first major surface serving as a light incident side and as a second major surface (3), comprises depositing an aluminum thin film (7) on the second major surface, applying a thin dielectric layer such as an oxide and/or a nitride on the thin film to prevent oxidation of the aluminum thin film in air, applying and drying a dielectric, glass-forming paste on the second major surface to cover the aluminum thin film, heating and/or sintering of the paste on the second major surface at the temperature of 800 degrees C to produce an aluminum-doping layer (8) in the second major surface, removing the aluminum-doping layer from heating and/or sintering and a glass layer (12) formed during the heating and/or sintering of aluminum-silicon eutectic layer of the second major surface, so that the aluminum-doping layer is exposed, applying a passivation layer on the second major surface, removing the passivation layer from the second major surface areas for forming openings, applying another aluminum layer on the second major surface by a physical vapor deposition method, sputtering and/or evaporation for contacting the aluminum-doping layer in the openings, applying metal contact strips for contacting the silicon substrate and optional bus bars for electrically connecting the metal contact strips on the first major surface, applying a nickel-containing base layer on the other aluminum layer of the second major surface to enable a chemical and/or galvanic reinforcement, applying an insulation layer on the second major surface, removing the insulation layer of the second major surface areas to re-expose solder pads by laser ablation, etching paste and/or ion etching to allow a subsequent chemical and/or galvanic reinforcement of the pads of openings, and applying a solderable layer or layer sequence made of nickel, silver, copper and/or tin on the metal contact strips of the first major surface and openings in the solder surfaces of the second major surface electrically and/or chemically. The paste is applied by printing such as screen printing. The glass layer is etched away from the second major surface using hydrofluoric acid, and the aluminum-silicon eutectic layer is etched away from the second major surface using hydrochloric acid. The metal contact strips and the optional bus bars are heated and/or sintered during the heating and/or sintering of the paste on the second major surface. The metal contact strips and optional bus bars are applied by printing a silver paste and/or spraying a silver-containing aerosol ink and/or extruding a paste made of fine silver needles. The removal of the passivation layer from areas of the second major surface is done by laser ablation, etching paste and/or by ion etching. An INDEPENDENT CLAIM is included for a solar cell of a p-doped or n-doped silicon substrate.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross sectional view of n-doped silicon substrate.    Silicon substrate (1)    Second major surface (3)    Aluminum thin film (7)    Aluminum-doping layer (8)    Glass layer. (12)