TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method (M1), step of electrochemically depositing a film of CuInxGa1-xSe2 includes electrochemically depositing the film using any one of constant current deposition, constant voltage deposition, and cyclic voltammetry; the film is deposited using cyclic voltammetry, and where an applied voltage is scanned in cycles from a potential -0.2 to -2.2 V; the film is deposited using constant current deposition, and where a constant current of -1.2 to -4.2 mA/cm2 is applied to the conductive substrate; the film is deposited using constant voltage deposition in which a constant potential applied to the conductive substrate is -1.30 to -1.60 V; and during electrochemical deposition the ionic liquid is heated to a temperature of 50-100 degrees C and is held constant while the CuInxGa1-xSe2 film is electrodeposited onto the conductive substrate. The process (M2) further involves a buffer layer between the CuInxGa1-xSe2 layer and the zinc oxide layer, where the buffer layer comprising any one of cadmium sulfide (CdS) and indium selenide (InSe). In the method (M2), the CuInxGa1-xSe2, zinc oxide and cadmium sulfide (CdS) or indium selenide (InSe) are deposited in a sequence of one-pot bath based processes; CuInxGa1-xSe2 layer has a thickness of 100-50 nm; and all the layers are deposited in a sequence of one-pot bath based processes. Preferred Composition: The ionic liquid composition comprises (millimol per liter) the copper ionic species (5-10), the gallium ionic species (40-60, preferably 40-50), the indium ionic species (60-90 or 40-60), and selenium ionic species (40-80, preferably 40-70). Preferred Components: The copper ionic species is obtained from an ionic liquid solution of copper sulfate, acetate, bromide, fluoride, chloride, iodide, hydroxide, nitrate, oxalate, citrate, phosphate, tungstate, and/or hydrates. The gallium ionic species is obtained from an ionic liquid solution of gallium sulfate, acetate, bromide, fluoride, chloride, iodide, hydroxide, nitrate, oxalate, citrate, phosphate, tungstate, and/or hydrates. The indium ionic species is obtained from an ionic liquid solution of indium sulfate, acetate, bromide, fluoride, chloride, iodide, hydroxide, nitrate, oxalate, citrate, phosphate, tungstate, and/or hydrates. The selenium ionic species is obtained from an ionic liquid solution of selenium sulfate, acetate, bromide, fluoride, chloride, iodide, hydroxide, nitrate, oxalate, citrate, phosphate, tungstate, and/or hydrates. The n-type semiconductor is one of an n-type inorganic semiconductor and an n-type organic semiconductor. The n-type inorganic semiconductor layer comprises a stoichiometric zinc oxide layer; or stoichiometric II-VI semiconductor layer.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The ionic solvent is reline; and imidazolium-based ionic liquids and pyridinium-based ionic liquids. The organic semiconductor is selected from phenyl-61C-butyric-acid-methyl ester, derivatives of fullerene, rylene diimides, and/or derivatives of thiophene.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The substrate comprises conductive polymer, polymer coated by metal, polymer coated with a transparent and conductive layer, indium tin oxide (ITO) on glass, ITO on polymer, ceramic coated with a conductive layer, metal, amorphous semiconductor materials, crystalline semiconductor materials, and/or polycrystalline semiconductor materials (preferably indium tin oxide coated polymer or plastic and fluorine doped indium tin oxide coated polymer or plastic). The polymer is polyethylene terephthalate. EXAMPLE - No suitable example given.