NOVELTY - A nanostructure (N1) comprises: an inorganic nanotube (INT) comprising metal or transition metal or an alloy of metals and/or transition metals and chalcogenide, doped with metal or transition metal.    USE - As nanostructure selected from nanoparticle or nanotube, useful for a lubricant material or composition, as conductive phase in nanocomposite, shock absorber material or device, and sensor selected from chemical sensor and/or electromechanical sensor, or nanoelectronic device (claimed) such as transistors, energy generators (solar cells), and nanosensors (e.g. in medical devices).    ADVANTAGE - The nanostructures provide improved doped INT and their mixtures e.g. with other INT or inorganic fullerene-like (IF) nanoparticles. Doping of IF and/or INT nanoparticles, endows n-type or p-type conductivity to these nanoparticles and reduces agglomeration and sedimentation. Doping of INT enables use of Mo/WS2 nanostructures for semiconducting applications. The INT nanostructures can be used in various applications, including conventional silicon-based applications, because of possibility of n- or p-type doping of these nanostructures like for silicon. The A'-chalcogenide precursor is a semiconductor of a certain electrical conductivity, and doped nanostructure has higher electrical conductivity. The band gap of MoS2 nanotubes is similar to that of silicon i.e. 0.89 to 1.07 eV, versus 1.17 eV for silicon. At the same time, S-Mo-S layers with coordinatively saturated surfaces are much more resistant against oxidation and humidity than silicon or other semiconductors of the groups II-VI. The doping produces changes in electronic properties leading to formation of high conductivity semiconductors, which are capable of dissipating electrical charges formed during tribological conditions (e.g. tribocharging). Re(Nb) doped INT-WS2 and INT-MoS2 and their IF exhibit improved tribological behavior. Since doped nanoparticles are highly conductive, they tend to repel each other and disperse better in suspension i.e. minimize tendency to agglomerate and show higher lubricity. Further, they exhibit smaller tendency to entrain in contact area, allowing them to move and role freely. When added to oils, it was found that free electrons produced by substituent dopant atoms are trapped by defects on nanoparticle surface. The negatively charged nanoparticles, which are possibly surrounded by positively-charged ionic atmosphere in oil, repel each other at close proximity. This effect leads to smaller agglomerates than for undoped nanoparticles and formation of stable oil suspension, even in absence of surfactant. Further, nanoparticles can accumulate extra charge during tribological action. This extra charge may lead to their rapid chemical deterioration. However, doped nanoparticles are expected to more easily conduct this extra charge, making them chemically more stable than undoped ones. These properties enable use of nanoparticles in lubricant compositions (nanocomposites with self-lubricating behavior e.g. being fluids or films). Use of such modified nanoparticles as additives to lubricating fluids, leads to remarkable reduction in friction coefficient for metal-metal interfaces (below 0.015) and their wear behavior under different lubrication conditions. Further, it is found that doped nanoparticles are less susceptible to electrostatic charges formed during tribological work. Due to their tribological properties and further hollow structure, INT nanostructures may further be used for absorbing kinetic energy for alleviating various kinds of shocks (like shocks occurring by car accidents) and interactions between moving particles i.e. can be used in shock absorber device.    DETAILED DESCRIPTION - A nanostructure (N1) comprises: an inorganic nanotube (INT) of formula (A')1-x(B')x-chalcogenide (I).    A'=metal or transition metal or an alloy of metals and/or transition metals;    B'=metal or transition metal;    x= less than or equal to 0.3.    Provided that:    (1) x is not 0; and    (2) A' is not B'.    INDEPENDENT CLAIMS are included for the following:    (1) composition (C1) comprising: the nanostructure (N1);    (2) nanocomposite comprising: a conductive phase comprising several nanostructures (N1);    (3) shock absorber device comprising: the composition (C1);    (4) sensor including chemical sensor and/or electromechanical sensor comprising: the composition (C1);    (5) process (P1) for the manufacture of INT (N1a) having a formula of (A1)1-x(B1)x-chalcogenide (Ia) and having B1 and B1-chalcogenide doped within the (A1)1-x-chalcogenide involving: providing A1-Y1 and B1-Y2 compositions each in vapor phase; flowing the A1-Y1 and B1-Y2 vapors together with a reducing agent carrying forming gas into a reaction chamber where they meet an opposite direction flow of a chalcogenide carrying reacting gas, to cause occurrence of reduction of the A1 and B1 metals or transition metals, followed by a reaction with the chalcogenide carrying reacting gas resulting in the formation of the nanostructures;    (6) process (P1a) for the manufacture of nanostructures each having a formula of (A2)1-x(B1)x-chalcogenide (Ib) and having B1 and B1-chalcogenide doped within the (A2)1-x-chalcogenide, involving: process (A): providing A2-oxide and B1-oxide compositions, each in vapor phase, or in the solid phase under conditions permitting phase transformation into the vapor phase; and permitting A2-oxide and B1-oxide vapors to flow together with a reducing agent carrying forming gas into a reaction chamber causing reduction of the A2 and B1 metals or transition metals and subsequent formation of the nanostructures, or process (B): providing A2-chalcogenide in vapor phase; and permitting the A2-chalcogenide vapor to flow together with a transport agent (e.g. halogen such as chlorine or iodine) and a dopant precursor B1-Y' in a reaction chamber under conditions preventing or minimizing back transport of atoms of the dopant, to cause doping of B1 into A2-chalcogenide and formation of the nanostructures;    (7) process (P2) for forming a nanostructured electrical conductor, involving: carrying out the process of (P1), where the A'-chalcogenide precursor is a semiconductor of a certain electrical conductivity, and the nanoparticles manufactured from the precursor having a higher electrical conductivity;    (8) lubricating material or lubricant composition (C2) comprising: nanostructures of formula (I); and    (9) a shock absorbing material (M1) comprising: nanostructures of formula (I).    Y1 and Y2=Cl, Br, or I;    A1=Mo, W, Re, Ti, Zr, Hf, Nb, Ta, Pt, Ru, Rh, In, Ga, InS, InSe, GaS, GaSe, and/or alloys such as WxMo1-x;    B1=Si, Nb, Ta, W, Mo, Sc, Y, La, Hf, Ir, Mn, Ru, Re, Os, V, Au, Rh, Pd, Cr, Co, Fe, or Ni;    A2=Mo, W, Re, Ti, Zr, Hf, Nb, Ta, Pt, Ru, Rh, In, Ga, InS, InSe, GaS, GaSe, WMo, and/or TiW;    Y'=halo e.g. Cl, Br, I; or pnictide e.g. P, As, Sb.    Provided that:    (1) A1 is not B1; and    (2) A2 is not B1.