NOVELTY - Method (M1) of producing a composite structure composed of a silicon-containing material (301) bonded or fabricated to a substrate (306), preferably flat panel display, involves (a) implanting ions into silicon-containing material to a depth, providing a silicon nitride (SiN)/silicon dioxide (SiO2)/silicon (Si)-containing layer/coating on the substrate, engaging the silicon-containing portion into contact with the substrate, and irradiating/treating the portion with a laser (307) having a wavelength of 350-1070 nm.    USE - The method is useful for producing composite structure containing silicon-containing material which is used in optical and electronic fields, preferably solar cells and displays.    ADVANTAGE - The method is cost-effective and produces highly stable composite structure.    DETAILED DESCRIPTION - Method (M1) of producing a composite structure composed of a silicon-containing material (301) bonded or fabricated to a substrate (306), preferably flat panel display, involves (a) implanting ions into silicon-containing material to a depth, providing a silicon nitride (SiN)/silicon dioxide (SiO2)/silicon (Si)-containing layer/coating on the substrate, engaging the silicon-containing portion into contact with the substrate, and irradiating/treating the portion with a laser (307) having a wavelength of 350-1070 nm, (b) holding the silicon-containing portion into contact with a surface of the substrate, where the substrate comprises a SiN/SiO2/Si-containing layer/coating on the surface, irradiating/treating the silicon-containing portion with a laser having a wavelength of 350-1070 nm, and cleaving the silicon-containing material along a surface established at a the depth at which the ions are implanted, or (c) engaging the silicon-containing material into contact with a surface of the substrate, where the silicon-containing material has ions implanted therein to a depth and the substrate has a SiN/SiO2/Si-containing layer/coating on the surface, and irradiating/treating the silicon-containing portion with a laser having a wavelength of 350 to 1070 nm.    DESCRIPTION OF DRAWING(S) - The drawing shows exemplary structure containing silicon containing portion and substrate with several layers/coatings.    Silicon containing material (301)    Damage layer (302)    Top layer (305)    Substrate (306)    Laser (307)