TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step of processing the surface of the carrier surface comprises: processing surface of the foam metal by degreasing, washing with water, pickling, washing with water, activating, washing with water and drying; or processing surface of the foam plastic by de-stressing, degreasing, washing with water, coarsening, neutralizing, reducing, washing with water, sensitizing, activating, washing with water and drying. The degreasing temperature is 50-60 degrees C and time is 1-10 minutes. The pickling temperature is 50-60 degrees C and time is 1-10 minutes. The activating time is 5-10 minutes. The de-stressing time is 20-40 minutes. The coarsening temperature is 70-75 degrees C and the coarsening time is 5-15 minutes. The sensitizing time is 5-10 minutes. The loading method comprises composite electroplating method, chemical composite plating method or dip-coating method. The composite electroplating method, comprises taking composite plating solution comprising nickel sulfate hexahydrate (250-300g/L), nickel chloride hexahydrate (30-40 g/l), boric acid (40 g/l), sodium dodecyl benzene sulfonate (0.5-1 g/l) and titanium dioxide (5-10 g/l), immersing the porous foam material and nickel plates into the plating solution, using cathode and anode as electroplates, where the cathode current density is 20-40 mAcm-2 and the pH value of the plating solution is 3.5-4.5, and stirring and constant temperature plating at 40-50 degrees C for 30-60 minutes. The chemical composite plating method, comprises taking chemical composite plating solution comprising sodium hypophosphite (20- 28 g/l), nickel(II) ion (87-93 g/L), lead(II) ion (0.7-1.5 ppm), lactic acid (25-30 g/l), propionic acid (1-5 g/l), sodium dodecyl benzene sulfonate (0.5-1 g/L) and titanium dioxide (5-10 g/l), where the pH value of the plating solution is 4-5, immersing the material in the plating solution, stirring and plating at 90-94 degrees C for 30-60 minutes. The dip-coating method, comprises taking tetrabutyl titanate as a precursor, at room temperature, slowing dripping absolute ethyl alcohol (30-40 ml) and tetrabutyl titanate (75- 85 m) into glacial acetic acid (5-10 ml), deionized water (4-8 ml) and absolute ethyl alcohol (75-85 ml) mixed solution, and then adding salt solution of metallic oxide semiconductor element (10-20ml 10g/l), continuously stirring, and after forming sol-gel before dipping surface processed foam metal substrate 5-10 minutes, drying in vacuum oven at for 90-100 degrees C for 10-20 minutes and repeating the steps 3-5 times. The heat treatment temperature is 300-350 degrees C and the time is 60-120 minutes. Preferred Components: The porous foam material porosity is more than 96%, thickness is 2-5 mm and the aperture is 100 mu m-2 mm. The porous foam material is foam copper, foam nickel, foam iron, foam aluminum or foam plastic. The semiconductor photocatalyst layer is cobalt oxide, nickel oxide, cuprous oxide, titanium dioxide, zinc oxide, cadmium sulfide, ferric oxide, stannic oxide, tungsten oxide or niobium pentoxide. The semiconductor photocatalyst layer has particle size of 10-50 nm, coverage rate of 50% and loading capacity of 20-50 g/m2. The degreasing agent is 10-30% sodium hydroxide solution. The pickling step is carried out using 10-20% sulfuric acid solution. The activating agent is 1-5% silver nitrate solution. The de-stressing agent is composed of acetone and water in a ratio of 0.2-1:1. The coarsening agent comprises chromium trioxide (15-25 g/l) and concentrated sulfuric acid (600 ml/l). The sensitizer is hydrochloric acid (30-40 ml/l) and stannous chloride (15-20 g/l).