NOVELTY - A coating liquid containing organo metallic compound is coated on a substrate, dried, irradiated with high energy beam and heated to form inorganic film containing metal oxide. The inorganic film is plasma processed to promote mineralization or crystallization of the film, and transparent conductive film is formed. The energy beam is irradiated after heating the dry coating film (3) at 300 degrees C or less in oxygen-containing atmosphere. The organic component in the film is removed by decomposition or combustion to form the inorganic film.    USE - Manufacture of transparent conductive film for thin film transistor and transparent electroconductive substrate used as transparent electrode for devices e.g. light emitting device, electric power generation device, display device and input device (all claimed). Uses include but are not limited to electroluminescent lamp, field emission lamp, solar cell, liquid crystal display, electroluminescent display, plasma display device, electronic paper and touch panel.    ADVANTAGE - The transparent conductive film having excellent transparency, high electroconductivity, film strength and resistance stability is formed. Since the electroconductive oxide fine particle layer has high compactness, the transparent conductive film has improved carrier mobility.    DETAILED DESCRIPTION - A coating liquid containing organo metallic compound as main component is coated on a substrate to form a coating film. The coating film is dried and irradiated with high energy beam and heated to form inorganic film containing metal oxide as main component. The inorganic film is plasma processed to promote mineralization or crystallization of the film, and transparent conductive film is formed. The energy beam is irradiated after heating the dry coating film at 300 degrees C or less in oxygen-containing atmosphere. The organic component in the film is removed by decomposition or combustion to form the inorganic film. The plasma processing is carried out at substrate temperature of 300 degrees C or less in non-oxidizing atmosphere. Electroconductive oxide fine particle layer containing metal oxide as main component is formed by the mineralization or crystallization. The organo metallic compound is organo indium compound, organo tin compound and/or organo zinc compound. The metal oxide is indium oxide, tin oxide and/or zinc oxide.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the energy beam irradiation process. (Drawing includes non-English language text)    Heating apparatus (1)    Substrate (2)    Dry coating film (3)    Energy beam irradiation lamp (4)