NOVELTY - Silicon ribbon processing apparatus (300) comprises a silicon ribbon production system comprising a crucible for holding a quantity of molten silicon and strings passing through the crucible to pull a silicon ribbon from the surface of molten silicon within the crucible; a deposition unit comprising a deposition element positioned to deposit a quantity of composition onto a moving silicon ribbon pulled from the silicon ribbon production system and a quantity of a composition to be deposited onto a surface of the silicon ribbon; and a silicon ribbon handling system.    USE - The apparatus is useful for silicon ribbon processing; formation of passivation layer on silicon sheet; forming highly doped surface layer on silicon sheet; and for forming protective polymer layer on silicon sheet (all claimed).    DETAILED DESCRIPTION - Silicon ribbon processing apparatus comprises a silicon ribbon production system comprising a crucible for holding a quantity of molten silicon and strings passing through the crucible to pull a silicon ribbon from the surface of molten silicon within the crucible; a deposition unit comprising a deposition element positioned to deposit a quantity of composition onto a moving silicon ribbon pulled from the silicon ribbon production system and a quantity of a composition to be deposited onto a surface of the silicon ribbon; and a silicon ribbon handling system comprising conveying elements positioned to control the movement of the silicon ribbon from the silicon ribbon production unit past the deposition unit. INDEPENDENT CLAIMS are:    (1) a method for formation of a passivation layer on a silicon sheet comprising depositing a dielectric material or a dielectric precursor material onto a moving silicon ribbon having an average width from about 1 cm to about 30 cm, an average thickness from about 60 microns to about 750 microns, the silicon ribbon having a temperature from about 600 degrees C to about 1350 degrees C;    (2) a method for forming a highly doped surface layer on a silicon sheet, comprising depositing a first dopant material comprising doped silicon particles or a dopant source precursor onto a surface of a moving silicon ribbon to form a first coated surface, the silicon ribbon having an average width from about 1 cm to about 30 cm, an average thickness from about 60 microns to about 750 microns, to form a dopant coating; and curing the dopant coating to form a highly doped silicon surface layer;    (3) a method for forming a protective polymer layer on a silicon sheet comprising laminating a polymer sheet onto a moving front surface of a silicon ribbon an average width from about 1 cm to about 30 cm, an average thickness from about 60 microns to about 750 microns; and    (4) a ribbon material comprising a doped silicon ribbon and an inorganic dielectric coating on a surface of the silicon ribbon, the ribbon material having a length of at least about 15 meters, an average width from about 1 cm to about 30 cm, an average thickness from 18 about 60 microns to about 750 microns and a dopant concentration from about 1.0x1018 to about 5x1020 dopant atoms per cubic centimeter and the inorganic dielectric coating having an average thickness from about 10 nm to 800 nm.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic perspective view of silicon ribbon processing apparatus.    Apparatus (300)    Optional insulating enclosure (302)    Pre-cutting processing section (304)    Ribbon cutter (306)    Cut ribbon processing and handling section (308)