NOVELTY - A seed structure is bonded by a single crystal semiconductor material to a carrier substrate using a glass bonding layer. The semiconductor material, seed structure, bonding layer or substrate is cooled to room temperature after depositing a semiconductor layer on seed structure. The semiconductor material is compressively strained by thermal contraction of substrate while cooling semiconductor layer, seed structure, bonding layer or substrate to room temperature from a temperature below glass transition temperature of glass material of bonding layer.    USE - Method of fabricating semiconductor structure/device (claimed) such as LED, laser, optical sensor, power electronic device, solar cell (all claimed), etc., on semiconductor substrate. Can also be used in fabrication of integrated circuits like logic processors and memory devices, vertical cavity surface emitting lasers (VCSELs), like resonant cavity LED (RCLED), bipolar junction transistors (BJTs), power MOSFETs, thyristors, Schottky diodes, junction FETs (JFETs), insulated gate bipolar transistors (IGBTs) and PIN diodes.    ADVANTAGE - Several layers of semiconductor material can be efficiently formed over engineered substrates having reduced lattice strain, which may enable the formation of relatively thicker layers of high quality semiconductor material using the engineered substrates. Hence an improved semiconductor device can be fabricated. The probability that cracks and other defects may nucleate and propagate within the seed structures and the epitaxial layer of semiconductor material can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor structure/device.    DESCRIPTION OF DRAWING(S) - The drawing shows a simplified cross-sectional view of an intermediate structure formed during the fabrication of semiconductor device/structure.    Intermediate structure (100)    Sacrificial substrate (102)    Portion of semiconductor layer (104A)    Ion implantation process (108)    Ion implant layer (109)