NOVELTY - Flexible thin-film solar photo-cell having a film layer structure sequentially comprises an anti-reflection layer, a transparent upper electrode layer, an isolation layer, a window layer, a protective layer, an absorbing layer, a reflective layer, a metal back electrode layer, an insulation layer, a substrate layer and a soldering layer. The anti-reflection layer is made of magnesium fluoride. The transparent upper electrode layer is made of zinc aluminum oxide. The isolation layer is made of intrinsic zinc oxide. The window layer is made of zinc sulfate.    USE - Used as a flexible thin-film solar photo-cell.    ADVANTAGE - The solar photo-cell: has high-efficiency and high-quality; and is economical and prepared by a large-scale continuous automatic production method.    DETAILED DESCRIPTION - Flexible thin-film solar photo-cell having a film layer structure sequentially comprises an anti-reflection layer, a transparent upper electrode layer, an isolation layer, a window layer, a protective layer, an absorbing layer, a reflective layer, a metal back electrode layer, an insulation layer, a substrate layer and a soldering layer. The anti-reflection layer is made of magnesium fluoride. The transparent upper electrode layer is made of zinc aluminum oxide. The isolation layer is made of intrinsic zinc oxide. The window layer is made of zinc sulfate. The absorbing material layer is made of copper-indium-gallium-selenium or copper-indium-aluminum-sulfur. The reflective layer material is made of aluminum. The metal back electrode layer is made of sodium copper-molybdenum alloy. The insulation layer is made of titanium dioxide. The substrate layer material is made of stainless steel foil, copper foil, aluminum foil or a polyimide thin film. The soldering layer is made of tin. An INDEPENDENT CLAIM is also included for manufacturing the flexible thin-film solar photo-cell, comprising: (a) performing glow discharge and the plasma purifying on the substrate material, then forming an insulating layer on the surface by an alternating current middle-frequency magnetron sputtering method; (b) using a copper-molybdenum-sodium fluoride rotating target to form a metal back electrode layer on the insulation layer by the direct current sputtering method; (c) using the metal aluminum target to form a reflective layer on the metal back electrode by the direct current magnetron sputtering method; (d) using the copper-indium-gallium-selenium four-element alloy to form an absorbing layer on the metal reflective layer by the direct current magnetron sputtering method, the absorbing layer being a positive-type semiconductor; (e) performing a solid-state photo-catalysis selenylation and re-crystallization on the material obtained from step (d) at 350-550 degrees C, and feeding the sulfur steam using the argon gas to form a copper-indium-gallium-selenium-sulfur thin film layer on the surface, forming a buffer protective layer on the surface, forming a zinc sulfate film layer on the absorbing layer after the selenylation and the vulcanization using the pulse magnetron sputtering method to obtain a window layer, the window layer being an negative-type semiconductor; (f) forming an isolation layer on the window layer using the alternating current middle-frequency magnetron sputtering method, the isolation layer being the nano intrinsic zinc oxide isolation layer; (g) forming a transparent upper electrode layer on the isolation layer using the zinc oxide target material including 2 percent of aluminum using the alternating current magnetron sputtering method; and (h) horizontally cutting the large-area product obtained from step (g), dividing it internally into a series of multiple cell units and using the magnesium fluoride target material to form an anti-reflection layer using the alternating current middle-frequency magnetron sputtering method.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the flexible thin-film solar photo-cell having the film layer structure.