NOVELTY - The electrostatic carrier has insulating layer (56) that is positioned between top crystalline semiconductor layer and bottom crystalline semiconductor layer. A dielectric layer (54) covers exposed surface areas of top crystalline semiconductor layer and surface areas of insulating layer. The backside trench (52) forms isolated backside regions on bottom surface of bottom crystalline semiconductor layer which is aligned to negative electrode regions and positive electrode regions on top crystalline semiconductor layer.    USE - Bipolar mobile electrostatic carrier (MESC) for processing thin wafer used for manufacturing semiconductor device. Uses include but not limited to semiconductor microelectronic chip, solar photovoltaic cell, system-on-chip (SOC), micro-electro-mechanical system (MEMS) devices, discrete device, power electronic device, flexible integrated circuit (IC), data storage device, opto electronic device such as LED, laser, photo detector.    ADVANTAGE - The mechanical yield loss can be reduced due to thin substrate breakage. The MESC structure is used as capacitor electrodes so as to provide excellent coefficient of thermal match (CTE) with the thin silicon wafers. The cross contamination can be eliminated from MESC to the thin wafer. The higher quality capacitor can be provided for reliable electrostatic clamping and declamping events. The distribution alignment of electrodes can provide uniform electrostatic clamping force that allows the thin wafer to be fully clamped. The short wet silicon etching or other thermal oxidation can be used to increase the surface smoothness and to remove the residual damage of the trench side walls. The suitable corrosion resistant coating can be applied to the front side, edge and back surfaces except the back side contact areas so as to improve the MESC survivability in corrosive process environments.    DETAILED DESCRIPTION - The backside contacts (62) are coupled to positive electrode regions and negative electrode regions so as to charge positive electrode regions and negative electrode regions. An INDEPENDENT CLAIM is included for method for fabricating bipolar mobile electrostatic carrier.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional views of the MESC.    Backside trench (52)    Dielectric layer (54)    Insulating layer (56)    Bottom silicon layer (58)    Backside contact (62)