NOVELTY - The method for producing a thin-film solar cell or a thin-film transistor, comprises fixing crystalline silicon particles on the surface of substrate (1) and epitaxially precipitating a crystalline silicone thin-film layer from different doped partial layers (2), which are epitaxially deposited to each other on-line. The surface of the silicon particles is etched after its fixing on and/or in the surface of the substrate and before the epitaxial precipitation of the thin-film layer. The etching is carried out with hydrofluoric acid or in a dry-etching.    USE - Method useful for producing a thin-film solar cell or a thin-film transistor.    ADVANTAGE - The method ensures simple and efficient production of a thin-film solar cell or a thin-film transistor.    DETAILED DESCRIPTION - The method for producing a thin-film solar cell or a thin-film transistor, comprises fixing crystalline silicon particles on the surface of substrate (1) and epitaxially precipitating a crystalline silicone thin-film layer from different doped partial layers (2), which are epitaxially deposited to each other on-line. The surface of the silicon particles is etched after its fixing on and/or in the surface of the substrate and before the epitaxial precipitation of the thin-film layer. The etching is carried out with hydrofluoric acid or in a dry-etching. The crystalline silicone particles have an average particle size of 1 mu m and are less than 1/5 of the thickness of the precipitated thin-film layer. The crystalline silicon particles are fixed on a glass substrate on and/or in the glass surface of the glass substrate for epitaxial deposition of the thin-film layer. The glass substrate is flat glass and the silicon particles are fixed on the flat glass surface. The glass substrate is a lime glass with a heat expansion coefficient of 8-9.5x 10-6/K or borosilicate glass or alkali-free silicate glass with a heat expansion coefficient of 3-6x 10-6/K or a glass ceramic with heat expansion coefficient of 0.5-1.5x 10-6/K at 20 degrees C. The thin-film layer is deposited at a temperature of the glass substrate of 750 degrees C. The temperature of the glass substrate is varied in the epitactic deposition of the partial layers. The deposition of the thin-film layer or its partial layers is carried out in a thermal pre-treatment in a short-time layer temperature of 1000 degrees C, and a solid phase crystallization process is carried out for transformation of amorphous into crystalline state. The deposition of the thin-film layer is carried out through chemical vapor deposition, physical vapor deposition, plasma-enhanced chemical vapor deposition, electron beam evaporation or sputtering in a high vacuum apparatus with a residual gas pressure of 10-6-10-8 mbar. The thin-film layer is exposed to an atmosphere containing an activated hydrogen during the deposition. The activated hydrogen is provided through a high frequency-hydrogen-gas discharge plasma, direct current-hydrogen-gas discharge plasma or a thermocatalytic process in the glass substrate heated at 600 degrees C. The crystalline silicon particles are produced through crushing crystalline or polycrystalline silicon under utilization of fissility of the crystal surface. The crystalline or polycrystalline silicon is produced by Czochralski-, element-free-galerkin-, vertical gradient freeze-, ingot casting- or Bridgman process or is processed from sawing drive and/or materials in the wafer fabrication. The crystalline silicon particles are fixed through pressure and/or in substrate surface or through blowing of powder or spraying a suspension of crystalline silicon particles or withdrawing the substrate from a suspension of the crystalline silicon particles on the substrate surface. The fixing of crystalline silicon particles is carried out on and/or in the flat glass surface through blowing the powder or spraying the suspension of the crystalline silcion particles on the glass surface during forming process in the flat glass production. The glass surface has a viscosity of 10-5 to 10-13 mPa/s. The flat glass surface is exposed during fixing the crystalline silicon particles to a reduced atmosphere. The crystalline silicon particles are fixed by a method in which the substrate surface and the crystalline silicon particles pressed on the substrate surface are moved relative to each other, on and/or in the glass surface. The particle size of the crystalline silicon particles is less than 10 mu m. The substrate surface is exposed to ultrasonic treatment and the method is polishing, looping and/or lapping the glass surface with the crystalline silicon particles. The glass surface of the substrate is roughened for fixing the crystalline silicon substrate and the crystalline silicon particles are fixed through relative movement of the glass surface against a body made of crystalline silicon particles pressed on the glass surface, on and/or in the glass surface. The crystalline silicon particles are fixed through sand blast or a high pressure water beam on and/or in the glass surface. The crystalline silicon particles have a particle size of 1-25 mu m in the sand or abrasive. The crystalline silicon particles have a particle size of 100 mu m and are fixed without using a binder on the substrate surface. The particle size distribution of the crystalline silicon particles is displaced to a particle size of 100 nm through ultrasonic- and/or megasonic cleaning. The crystalline silicon particles are fixed after the sol-gel-process through suspending the crystalline silicon particles in the sol or gel, applying the suspension on the substrate surface and drying the gel on the substrate surface. The silicon particles to the factor of 2-5 mal are greater than the thickness of the gal layer after drying. The gel layer has a layer thickness of 50-400 nm after drying. The suspension is applied through screen printing or immersing the substrate surface into the suspension on the substrate surface. The silicon particles are fixed on and/or in the surface of the transparent surface of the solar cell. A positive doped crystalline silicon particle layer is deposited on the surface of the transparent substrate. The transparent, electrically conductive function layer is provided between the reflector layer and the semiconductor layer. The reflector layer is formed through a metal layer (5) that forms the back electrode layer. The front electrode layer and/or the function layer consist of metal oxide between the reflector layer and the semiconductor layer. The metal oxide is indium-tin-oxide or doped zinc- or tin oxide. The epitactically deposited crystalline silicon layer is equipped on the side turned away from the crystalline silicon particles with an amorphous silicon layer.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of a thin layer solar cell.    Substrate (1)    Different partial layers (2)    P-phase (3)    N-layer (4)    Metal layer. (5)