NOVELTY - The method for producing an optoelectronic device including a layer, comprises providing a substrate (201) into a coating chamber (200), supplying a gas into the coating chamber, generating a plasma in the gas by supply energy via to electrodes (202), depositing a material for the layer on the substrate, and finishing the optoelectronic device. The layer is deposited in a chamber using plasma enhanced deposition process, in an optically active area (206) of the optoelectronic device and on the substrate with the deposition rate of less than or equal to 350 Angstrom /minute.    USE - The method is useful for producing an optoelectronic device such as solar cell including a layer (claimed).    ADVANTAGE - The method is capable of effectively and economically producing the optoelectronic device with high quality, power density and frequency power.    DETAILED DESCRIPTION - The method for producing an optoelectronic device including a layer, comprises providing a substrate (201) into a coating chamber (200), supplying a gas into the coating chamber, generating a plasma in the gas by supply energy via to electrodes (202), depositing a material for the layer on the substrate, and finishing the optoelectronic device. The layer is deposited in a chamber using plasma enhanced deposition process, in an optically active area (206) of the optoelectronic device and on the substrate with the deposition rate of less than or equal to 350 Angstrom /minute, and deposited as an intrinsic layer and a boundary that is formed to a doped layer through the layer by an optoelectronic device and as an intrinsic microcrystalline silicon layer. The plasma is generated at a power density of less than or equal to 0.4 w/cm2. The coating chamber has a deposition surface (208) of greater than or equal to 1 m2. The substrate is placed between two electrodes so that the deposition surface is faced on one of the electrodes at a distance ( less than or equal to 10 mm) from the electrodes. The material for the intrinsic layer in a region removed from the boundary with other processing conditions is deposited as the material for a layer in the boundary region.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a coating chamber for producing an optoelectronic device.    Coating chamber (200)    Substrate (201)    Electrodes (202)    Gas supply (204)    Area (206)    Deposition surface. (208)