NOVELTY - Compound passivation antireflection film comprises silicon dioxide layer (2), amorphous-aluminum oxide layer (3), and amorphous-silicon nitride layer (4) arranged on emitting electrode layer (1). The amorphous-aluminum oxide layer is directly prepared on solar battery lighting surface emitting electrode layer through plasma enhanced chemical vapor deposition or atomic layer deposition at thickness of 2-50 nm. The silicon dioxide layer is formed between emitting electrode layer and amorphous-aluminum oxide layer through annealing at thickness of 1.5-3 nm.    USE - Compound passivation antireflection film used for crystalline silicon solar battery.    ADVANTAGE - The a-SixNx antireflection film has good antireflection effect, while a-Al2O3/SiO2 compound passivation film has excellent chemical passivation and field passivation effects. The a-SixNx/a-Al2O3/SiO2 compound passivation antireflection film has good heat-stability and is compatible with subsequent battery preparation procedures. The antireflection film has good anti-UV property.    DETAILED DESCRIPTION - Compound passivation antireflection film comprises silicon dioxide layer (SiO2) (2), amorphous-aluminum oxide layer (a-Al2O3) (3), and amorphous-silicon nitride layer (a-SixNx) (4) arranged on crystalline silicon solar battery lighting surface emitting electrode layer (1). The a-Al2O3 layer is directly prepared on solar battery lighting surface emitting electrode layer through plasma enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD). It has thickness of 2-50 nm. The SiO2 layer is formed between emitting electrode layer and a-Al2O3 layer through annealing. It has thickness of 1.5-3 nm. The SiO2 layer and a-Al2O3 layer are compound passivation layers and have effects of surface passivation and field passivation. The amorphous-SixNx is antireflection film providing antireflection effect to incoming light. It has thickness of 60-100 nm.    x=0.5-0.6.    An INDEPENDENT CLAIM is included for preparation of compound passivation antireflection film by preparing a-Al2O3 layer on lighting surface emitting electrode of crystalline silicon solar battery layer; annealing to form SiO2 layer between emitting electrode layer and amaorphous-Al2O3 layer; employing PECVD technology to prepare amorphous-SixNx layer on amorphous aluminum oxide layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of compound passivation antireflection film.    Electrode layer (1)    Silicon dioxide layer (2)    A-aluminum oxide layer (3)    A-silicon nitride layer (4)