NOVELTY - The method for producing copper-indium-gallium-selenide-sulfide- semiconductor layer as an absorber layer for thin-film solar cells by depositing copper, indium, gallium, selenium and sulfur on a substrate (5) that sustains a back contact (6), comprises structuring the absorber layer on the substrate in a coating chamber, initially producing a vacuum of 1x 10-6 to 1x 10-4, heating the substrate at 200-600 degrees C, evaporating copper, indium and/or gallium or their chalcogenide compounds in metal evaporating source (1), and focusing the metal vapor radiations on the substrate.    USE - Method for producing copper-indium-gallium-selenide-sulfide- semiconductor layer as an absorber layer for thin-film solar cells and photovoltaic.    ADVANTAGE - The method ensures economical and simple production of the copper-indium-gallium-selenide-sulfide- semiconductor layer with high deposition rate and less material consumption.    DETAILED DESCRIPTION - The method for producing copper-indium-gallium-selenide-sulfide- semiconductor layer as an absorber layer for thin-film solar cells by depositing copper, indium, gallium, selenium and sulfur on a substrate (5) that sustains a back contact (6), comprises structuring the absorber layer on the substrate in a coating chamber, initially producing a vacuum of 1x 10-6 to 1x 10-4, heating the substrate at 200-600 degrees C, evaporating copper, indium and/or gallium or their chalcogenide compounds in metal evaporating source (1), focusing the metal vapor radiations on the substrate such that they strike on a substrate surface, discharging selenium and/or sulfur from a chalcogen low-energy wide-beam ion source (2) in an ionized manner, focusing the radiation of the chalcogen low-energy wide-beam ion source on the surface of the substrate so that it overlaps with the metal vapor radiations, and extracting electrons (3) from the chalcogen low-energy wide-beam ion source in addition to the chalcogen ions, where the distribution of the chalcogen low-energy wide-beam ion source overlaps with the metal vapor radiations in the coating chamber and guides the same to an ionization and/or stimulation. The chalcogen low-energy wide-beam ion source reaches on the basis of the energy introduced by the chalcogen ion radiation for the deposition of the desired absorber layer. The back contact is a molybdenum layer, which has a thickness of 0.5-2 mu m, where the ratio of the metal components such as copper to indium and/or gallium is 0.81:0.95, the energy of the selenium particle of 10-500 eV is selectable and the temperature of the substrate during the deposition phase is 400-550 degrees C. The copper is completely or partially replaced against silver, the gallium or indium is completely or partially replaced against aluminum and the selenium is partially or completely replaced against sulfur or tellurium. The copper, indium and/or gallium are deposited as precursor layers under using the chalcogen low-energy wide-beam ion source operated with an inert gas, where a copper-indium-gallium-selenide-sulfide-absorber layer develops during striking the chalcogen ion radiation in a second step. The substrate is moved during the deposition and is flexible. A plasma source is installed in the coating chamber optionally by an additional plasma stimulation for supporting the ionization and/or stimulation of the metal components. The substrate or the metallic back contact is pre-stressed over a DC voltage or an alternating voltage including a high frequency voltage, where hydrogen, nitrogen, argon or helium are used for supporting the described deposition process. The metal components are already present as binary compounds before striking on the layer system. An INDEPENDENT CLAIM is included for a device for producing copper-indium-gallium-selenide-sulfide- semiconductor layer as an absorber layer for thin-film solar cells by depositing copper, indium, gallium, selenium and sulfur on a substrate.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a method for producing copper-indium-gallium-selenide-sulfide- semiconductor layer as an absorber layer.    Metal evaporating source (1)    Chalcogen low-energy wide-beam ion source (2)    Electrons (3)    Substrate (5)    Back Contact. (6)