NOVELTY - Substrate coated with a film comprising at least one substituted heterocyclic compound (I), is claimed. (I) is present in film in the form of particles with a mean diameter of less than or equal to 300 nm, preferably less than or equal to 200 nm.    USE - The substrate is useful as anode interface layer in electronic devices or finished article including organic electroluminescent diodes, polymeric electroluminescent diodes, organic field-effect transistors and organic solar cells (all claimed).    ADVANTAGE - The substrate: has high hole mobility and high conductivity; has excellent optical properties; has high transmission coefficient in the visible region; is easy to form as continuous homogeneous film; and provides electronic devices having increased conversion yields and improved performance.    DETAILED DESCRIPTION - Substrate coated with a film comprising at least one substituted heterocyclic compound of formula (I), is claimed. (I) is present in film in the form of particles with a mean diameter of less than or equal to 300 nm, preferably less than or equal to 200 nm.    X1, X2 = N, P, O, S, Se or Te;    R1-R4 = 4-10C aryl or 4-10C heteroaryl (both optionally substituted with at least one halo, OH, 1-30C alkyl, -OCnH2n+1 or -C(O)OCnH2n+1); and    n = 0-16.    INDEPENDENT CLAIMS are also included for:    (1) manufacturing a substrate comprising at least one step of dry-route deposition of a film comprising (I), where the step of deposition is performed at an evaporation rate of less than 1 Angstrom /second, preferably less than or equal to 0.1 Angstrom /second;    (2) use of the substrate as an anode interface layer in electronic devices;    (3) an organic solar cell comprising substrate, which is made of tin-doped indium oxide;    (4) manufacturing an organic solar cell comprising (i) depositing the substrate onto a base support, (ii) depositing the photosensitive active layer, preferably using a spin coater, (iii) optionally, annealing of the photosensitive active layer in a tubular oven, at 30-150 degrees C for 1 minute to 24 hours, under an inert atmosphere of argon, (iv) optionally, depositing a layer made of lithium fluoride via a dry route, at evaporation rate of less than 1 Angstrom /second, preferably 0.1 Angstrom /second, and (v) optionally, depositing the electrolytic layer via a dry route, at evaporation rate of less than or equal to 3 Angstrom /second, preferably 1-2 Angstrom /second; and    (5) substituted heterocyclic compounds (I) including dodecyl 4-(4-(2,6-bis((4-((dodecyloxy)carbonyl)phenyl))-4H-pyran-4-ylidene)-6-(4-((dodecyloxy)carbonyl)phenyl)-4H-pyran-2-yl)benzoate, 4-(2,6-bis(4-fluorophenyl)-4H-pyran-4-ylidene)-2,6-bis(4-fluorophenyl)-4H-pyran, 4-(2,6-bis(naphthalen-2-yl)-4H-pyran-4-ylidene)-2,6-bis(naphthalen-2-yl)-4H-pyran, 2,6-bis(3,4-bis(decyloxy)phenyl)-4-(2,6-bis(3,4-bis(decyloxy)phenyl)-4H-pyran-4-ylidene)-4H-pyran, 4-(2,6-bis(4-(hexyloxy)phenyl)-4H-thiopyran-4-ylidene)-2,6-bis(4-(hexyloxy)phenyl)-4H-thiopyran, 2,6-bis(3,4-bis(hexyloxy)phenyl)-4-(2,6-bis(3,4-bis(hexyloxy)phenyl)-4H-thiopyran-4-ylidene)-4H-thiopyran, 4-(2,6-bis(thiophen-2-yloxy)-4H-thiopyran-4-ylidene)-2,6-bis(thiophen-2-yloxy)-4H-thiopyran or 4-(2,6-diphenyl-4H-selenopyran-4-ylidene)-2,6-diphenyl-4H-selenopyran.