NOVELTY - Production of textured surface of silicon wafer comprises forming mask layer comprising polystyrene microparticles on silicon wafer by utilizing water film way or printing way, etching silicon (Si) sheet having mask layer by utilizing the plasma etching method, forming ordered two-dimensional colloid crystal array on surface of Si substrate, etching silicon sheet having mask layer by utilizing plasma etching method, forming antireflection structure, and removing residual mask layer substance on surface of the silicon wafer.    USE - Method for producing textured surface of silicon wafer (claimed).    ADVANTAGE - The method is non-chemical method, and it stops main use of acid-alkali chemical substances, and protects ecological environment; is not limited by single crystal and poly-crystal; and the single crystal and poly-crystal can be produced with textured surfaces, thus reducing reflectivity and making silicon wafer absorb sunlight as more as possible, and increasing conversion efficiency of solar cell.    DETAILED DESCRIPTION - Production of textured surface of silicon wafer comprises:    (A) forming mask layer comprising polystyrene microparticles on silicon wafer by utilizing water film way, boiling silicon (Si) substrate sheet for 5-10 minutes in mixed solution of ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and water (H2O) at volume ratio of 1:2:6, completely washing using deionized water, drying clean Si substrate sheet, soaking for 1-20 hours in 10% sodium lauryl sulfate solution with concentration of 10%, and obtaining hydrophilic substrate surface;    (B) preparing polystyrene small spheres into colloid solution, diluting with ethanol, dripping diluted solution on surface of soaked Si substrate sheet, laying solvent and polystyrene small spheres on surface of Si substrate sheet, slowly soaking Si substrate sheet in deionized water, due to tension action of surface, forming layer of single film of PS colloid small sphere on aqueous surface, and dripping 2% sodium lauryl sulfate solution in deionized water;and    (C) standing for 5-15 minutes at room temperature, taking PS small spherical film using soaked Si substrate sheet, naturally volatizing and drying in air, dripping 10% sodium lauryl sulfate solution into container comprising small spheres, volatizing solvent, forming ordered two-dimensional colloid crystal array on surface of Si substrate, etching silicon sheet having mask layer by utilizing plasma etching method, forming antireflection structure, and removing residual mask layer substance on surface of the silicon wafer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the production of textured surface of silicon wafer.