NOVELTY - Photovoltaic (PV) structure, comprises an array of PV nanostructures each having a conductive nanocable (22) and PV layers above the nanocable, where an average grain size of at least one of the PV layers is less than 100 nm, and the ends of the nanocable are coupled together by overplated material.    USE - The PV structure is useful: in forming nanostructures and PV device (all claimed); in charging electronic devices including cell phone, computer or personal digital assistant; as light weight roof-top energy for industrial and agricultural power generation; and as a light weight energy source for transportation including automobile, aircraft or barges.    ADVANTAGE - The PV structure: is flexible; enables improved power generation in low light conditions; produces more than one electron/photon engaging the array of PV nanostructures; and provides nanostructure having smooth interface that results in a sharper junction.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) forming (M1) a nano structure, comprising: forming a back plane contact above a substrate; forming a mask above the back contact, where the mask includes vias; forming an array of nanocables extending along the vias; removing the mask; and adding the PV layers above the nanocables;    (2) forming a flexible PV structure, comprising: creating a mask having via holes in it; plating for forming an array of conductive nanocables in the via holes, where the plating is performed until overfill of plated material from the via holes grows together over the mask; removing the mask; and forming PV layers above the nanocables;    (3) adjusting (M2) an array of PV nanostructures each having a conductive nanocable and PV layers above the nanocable, comprising rotating the array of PV nanostructures in a plane of a substrate of it , for increasing an observable power output of the array;    (4) a device, comprising: an array of nanocables extending from a substrate; a first semiconductor layer including a III-V compound semiconductor, where the first semiconductor layer is positioned over the nanocable; and a second semiconductor layer including a II-VI compound semiconductor, where the second semiconductor layer is positioned over the nanocable and forming a rectifying junction with the first semiconductor layer; and    (5) manufacturing (M3) a PV device comprising: depositing a first semiconductor layer above an array of nanocables, where the first semiconductor layer comprises a III-V compound semiconductor; and depositing a second semiconductor layer above the array of nanocables, where the second semiconductor layer comprises a II-VI compound semiconductor, and forms a rectifying junction with the first semiconductor layer.    DESCRIPTION OF DRAWING(S) - The figure illustrates a side cross-section of a solar brush.    Solar brush (10)    First conductive layer (14)    Second conductive layer (18)    Bristles (20)    Nanocable (22)