NOVELTY - Photoetching technology and vacuum metal depositing technology are used to obtain metal silver (or gold, platinum) grain array. The obtained array is annealed and immersed in hydrofluoric acid and hydrogen peroxide solution (or ferric nitrate solution) corrosive solution, and processed after removing metals on the surface. Silicon layer and aluminum transparent conductive film are deposited on the surface, and sintered to obtain silicon nanohole photovoltaic cell.    USE - Silicon nano array photovoltaic material for photovoltaic cell.    ADVANTAGE - The nano array photovoltaic material has large area, ordered structure, excellent anti-reflection performance, broad spectrum absorbing performance and provides photovoltaic cell with strong light absorbing characteristics, high current carrying ability and high photoelectric conversion efficiency.    DETAILED DESCRIPTION - Photoetching technology and vacuum metal depositing technology are used to obtain metal silver (or gold, platinum) grain array having large area size and distributed periodically. High vacuum metal depositing technology is used to deposit uniformly distributed metal silver (or gold, platinum) film on surface of clean silicon piece, annealed in vacuum or nitrogen protecting atmosphere, and metal silver (or gold, platinum) nanoparticle array having large area size and distributed periodically on surface of the silicon is formed. Metal silver (or gold, platinum) nanoparticles are distributed on the surface of the clean silicon piece through rotary coating technology to form periodically distributed metal silver (or gold, platinum) nanoparticle array. The obtained array is immersed in hydrofluoric acid and hydrogen peroxide solution (or ferric nitrate solution) corrosive solution, sealed and processed for 4-150 minutes at 25-50 degrees C to obtain large-area silicon nano array structure. The array structure is soaked in aqua regia solution to remove metal on the surface, and further immersed in hydrofluoric acid and hydrogen peroxide solution, sealed and processed for 4-150 minutes at 25-50 degrees C and metal on the surface is removed. The process of immersing in hydrofluoric acid and hydrogen peroxide solution is repeated in order to obtain large-area silicon nano array structure. An n-type (or p-type) silicon layer is deposited on the surface of the p-type (or n-type) ordered silicon nano array structure material to form three-dimensional pn-knob. Aluminum transparent conductive film is deposited on the surface of the silicon nanohole three-dimensional pn-knob and metal aluminum is deposited on the bottom face of the p-type silicon substrate, and sintered. The peripheral knob is removed to obtain a single-piece silicon nanohole photovoltaic cell.