NOVELTY - Plasma enhanced deposition of a material layer comprises introducing a first precursor and a second precursor in vapor form into a reaction chamber and participate in a chemical deposition reaction.    USE - The method and device are useful for plasma enhanced deposition of a material layer (all claimed).    ADVANTAGE - The deposition method provides a high quality material layer in a time and cost effective manner. A passivation layer produced with the method provides for a better passivation quality for a wafer solar cell, than passivation layers produced by atomic layer deposition (ALD) processes, which leads to lower surface recombination rate on the solar cell surface passivated in this way, and solar cells with a higher efficiency.    DETAILED DESCRIPTION - Plasma enhanced deposition of a material layer comprises introducing a first precursor and a second precursor in vapor form into a reaction chamber and participate in a chemical deposition reaction, where the material layer is deposited onto a surface region of a substrate placed inside the reaction chamber, where the introduction of the first precursor and/or a movement of the substrate is performed so that the concentration of the first precursor in a surrounding space above the surface region is varied in a pulse shape, and in the surrounding space at least partly a chemical gas phase reaction of the first precursor with a reactant takes place, and where the second precursor is activated for a chemical reaction with the first precursor by a plasma discharge. INDEPENDENT CLAIMS are included for:    (1) a semiconductor device, in particular wafer solar cell, with a material layer, which is deposited by the plasma enhanced deposition method; and    (2) a deposition device for plasma enhanced deposition of a material layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the deposition device.    Reaction chamber (1)    Substrate holder (2)    Substrate (3)    Surface region (4)    Material layer (5)    Space (6)    First precursor (7)    Second precursor (8)    Introduction unit (9)