NOVELTY - A five-junction semiconductor solar photovoltaic cell chip consists of a germanium single chip microcomputer as a substrate, a bottom cell chip, a nucleating layer, a buffer layer, potential barrier layers, channel junctions, junctions of cell chip, window layers, top cell chips, and an ohm contact layer grown on the substrate in specific order.    USE - Five-junction semiconductor solar photovoltaic cell chip.    ADVANTAGE - The five-junction semiconductor solar photovoltaic cell chip has excellent photovoltaic conversion efficiency. The energy flow of solar radiation which is distributed on the UV wave segment is efficiently adsorbed.    DETAILED DESCRIPTION - A five-junction semiconductor solar photovoltaic cell chip consists of a germanium single chip microcomputer as a substrate, and a bottom cell chip (p-germanium, n-germanium), a nucleating layer (gallium arsenide), a buffer layer (gallium-indium arsenide), a potential barrier layer (n-gallium-indium arsenide), a channel junction (n++-aluminum-gallium arsenide, p++-aluminum-gallium arsenide), a potential barrier layer (p+-gallium-indium arsenide), junction (II) of the cell chip (p-aluminum-gallium arsenide, n-aluminum-gallium arsenide), a window layer (n+-aluminum-gallium-indium phosphide/aluminum-indium arsenide), channel junction (II) (n++-gallium-indium arsenide, p++-gallium-indium arsenide), potential barrier layer (II) (p+-gallium-indium phosphide), junction (III) of cell chip (p-gallium-indium phosphide, n-gallium-indium phosphide), window layer (II) (n+-aluminum-indium phosphide), channel junction (III) (n++-aluminum-indium arsenide, p++-aluminum-indium arsenide), potential barrier layer (III) (n+-aluminum-indium arsenide), a top cell chip (p-aluminum-indium arsenide, n-aluminum-indium arsenide), window layer (III) (n+-aluminum-indium arsenide), channel junction (IV) (n++-zinc sulfide-cadmium selenide, p++-zinc sulfide-cadmium selenide), potential barrier layer (IV) (n+-zinc sulfide-cadmium selenide), a top cell chip (p-zinc sulfide-cadmium selenide, n-zinc sulfide-cadmium selenide), window layer (IV) (n+-zinc sulfide-cadmium selenide), and an ohm contact layer (n+-zinc sulfide-cadmium selenide) sequentially grown on the substrate.