TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The content of foreign atom in the doped zinc oxide on the substrate side facing the front electrode layer and/or the content of foreign atom on the semiconductor layer side facing the doped rear electrode layer is not greater than 2asterisk1021 cm-3. The content of foreign atom on the semiconductor layer side facing the front electrode layer and/or the reflecting layer side facing the rear electrode layer amounts to 1asterisk1020 cm-3-1asterisk1021 cm-3. The foreign atom is doped with the zinc oxide, aluminum, gallium or boron. The front electrode layer on the side facing the semiconductor layer exhibits depressions with a depth of 50-600 nm, a width of 500-5000 nm and an opening angle of 100-150 degrees . The front electrode layer on the side facing the semiconductor layer exhibits a root-mean-square roughness of 50 nm. The front electrode layer and/or the rear electrode layer exhibits a sheet resistance of less than 24 ohm/square. The front electrode layer and/or the rear electrode layer at a wavelength of 700 nm and 950 nm have a light absorption of less than 5% and less than 8% respectively. The reflective layer is made from a white material. The front electrode layer and the rear electrode layer have an average layer thickness of at least 400 nm and 300 nm respectively. The semiconductor layer is made of silicon. The deposition system for sputtering the front electrode layer and/or the rear electrode layer in each case are provided with zinc-oxide sputtering targets comprising aluminum- or gallium oxide as a foreign oxide. The zinc oxide-sputtering target in the infiltration area of the deposition system facing a sputtering-station exhibits a higher foreign oxide than the zinc oxide sputtering target in the discharging area facing the sputtering-station in the deposition system for sputtering the front electrode layer and/or the rear electrode layer. The zinc oxide sputtering target in the infiltration area facing the sputtering-station of the deposition system for sputtering the front electrode layer and/or the rear electrode layer exhibits a foreign oxide content of 0.9-3.1 wt.% and the zinc oxide sputtering target in the discharging area facing sputtering-station of the deposition system for sputtering the front electrode layer and/or the rear electrode layer exhibits a foreign oxide content of 0.2-1.5 wt.%. Preferred Method: The temperature of the substrate during sputtering the doped zinc oxide-front electrode layer in the infiltration area facing sputtering-station increases room temperature to not greater than 280 degrees C, preferably from 80 degrees C to not greater than 250 degrees C in the discharging area adjacent to the sputtering-station. The temperature of the module during sputtering the doped zinc oxide-rear electrode layer is not greater than 240 degrees C. The doped zinc oxide-front electrode layer at the side averted from the substrate is etched before the deposition of the semiconductor layer. The doped zinc oxide-front electrode layer and/or doped zinc oxide-rear electrode layer is deposited in a deposition system by sputtering, where all layers of the zinc oxide-electrode-part layer is deposited in the sputtering-station with each identical sputtering gas or sputtering gas-mixture.