TECHNOLOGY FOCUS - ELECTRONICS - Preferred Layer: The major component of the photoelectric conversion semiconductor layer is at least one semiconductor compound having a chalcopyrite structure (preferably semiconductor formed of a group Ib element, a group IIIb element, and a group VIb element). An anodized substrate selected from an anodized substrate formed of an Al (aluminum)-based Al base with an Al2O3-based anodized film formed on at least one surface side, an anodized substrate formed of a compound base of a Fe (iron)-based Fe material and an Al-based Al material attached to at least one surface side of the Fe material with an Al2O3-based anodized film formed on at least one surface side of the compound base, and an anodized substrate formed of a base of a Fe-based Fe material and an Al-based Al film formed on at least one surface side of the Fe material with an Al2O3-based anodized film formed on at least one surface side of the base is used as the substrate.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the preparation step, the aqueous solution (III) is mixed after the aqueous solutions (I) and (II) are mixed. The film forming step is performed with the reaction temperature of 75-90 degrees C. In the method (M1), a reaction solution whose pH after reaction becomes 7.5-11.0 is used as the reaction solution in the film forming step. A reaction solution which includes at least one zinc sulfate, zinc acetate, zinc nitrate, zinc citrate, and their hydrates is used as the component (A1) of the reaction solution in the preparation step. The reaction solution which includes thiourea is used as the component (A2) of the reaction solution in the preparation step. A reaction solution which includes sodium citrate and/or its hydrate is used as the component (A3) of the reaction solution in the preparation step. The fine particle layer forming step is performed by a method that applies a dispersion liquid which includes several fine particles or by a CBD (chemical bath deposition) method that deposits the fine particles. Preferred Components: The concentration of the component (A3) is 0.001-0.225 M, and the concentration of the component (A4) is 0.45-1.0 M. The group Ib element is at least one element selected from Cu (copper) and Ag (silver); the group IIIb element is at least one element selected from Al (aluminum), Ga (gallium), and In (indium); and the group VIb element is at least one element selected from S (sulfur), Se (selenium), and Te (tellurium). EXAMPLE - A reaction solution comprising zinc sulfate (0.03 M), thiourea (0.05 M), sodium citrate (0.03 M), ammonium hydroxide (0.75 M) was prepared. The pH before the start of the reaction was 11. The solution showed a transmission factor at 550 nm after maintained at 90 plus minus 3 degrees C for 10 or 30 minutes of greater than or equal to 15.0%.