NOVELTY - Non-vacuum wet production of copper-indium-gallium-selenium solar cell comprises forming first transparent conductive oxide layer, copper-indium-gallium-selenium layer and cadmium sulfide layer, zinc oxide layer and second transparent conductive oxide layer on backside electrode layer via non-vacuum wet; and sequentially carrying out laser process and scraper cutting process for workpiece to form the segmental secondary workpieces.    USE - Method of non-vacuum wet production of copper-indium-gallium-selenium solar cell (claimed).    ADVANTAGE - The method can improve conformability of production process.    DETAILED DESCRIPTION - Non-vacuum wet production of copper-indium-gallium-selenium solar cell comprises:    (A) carrying out formation process of first transparent conductive oxide layer for substrate having backside electrode layer using formation device of first transparent conductive oxide layer to form first transparent conductive oxide layer on backside electrode layer, with backside electrode layer positioned on substrate, and substrate supported by multiple roller and driven forwards;    (B) mixing, coating layer, drying, compacting, processing heat treatment, cutting and forming first transparent conductive oxide layer; forming copper-indium-gallium-selenium layer and cadmium sulfide layer by making use of formation device of copper-indium-gallium-selenium layer and cadmium sulfide layer, mixing, coating layer, drying, compacting, and processing primary sulfur-selenium reaction, heat treatment, impurity-phase cleaning process, backward sulfur-selenium reaction process and cadmium sulfide layer growth process to sequentially form copper-indium-gallium-selenium layer and cadmium sulfide layer on first transparent conductive oxide layer;and    (C) forming zinc oxide layer, mixing, coating layer, drying, compacting, processing heat treatment, cutting, utilizing formation device of zinc oxide layer to further form zinc oxide layer on cadmium sulfide layer; and mixing process, coating layer formation process, drying, compacting, processing heat treatment, cutting by utilizing formation device of second transparent conductive oxide layer to form second transparent conductive oxide layer on the zinc oxide layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the non-vacuum wet production of copper-indium-gallium-selenium solar cell. (Drawing includes non-English language text)