NOVELTY - Fabrication of solar cell includes forming first and second interdigitated metal contacts respectively ohmically contacting regions of first conductivity type and regions of second conductivity type, by printing a patterned etch resist over a thermally grown oxide with arrays of small contact openings over the regions of first conductivity type and the regions of second conductivity type; removing the thermally grown oxide from the arrays of small contact openings; removing the patterned etch resist; and forming the first and second interdigitated metal contacts.    USE - Fabrication of solar cell.    ADVANTAGE - The solar cell, which is efficient in operation, is readily manufactured using processing techniques, which are less expensive than microelectronic circuit processing. The stacked metal contacts provide good ohmic connection and reflection properties on the back side of the cell; and the textured surface on the front side provides greater capture of photons and increased operating efficiency for the cell.    DETAILED DESCRIPTION - Fabrication of solar cell comprises:    (A) providing a silicon substrate having a front surface and a back surface;    (B) forming a first doped region of first conductivity type in the back surface and a thermally grown silicon oxide layer over the doped region;    (C) printing a patterned etch resist over the back surface, where rows across the back surface are not masked;    (D) removing exposed silicon oxide from the back surface;    (E) removing the patterned etch resist from the back surface;    (F) removing exposed silicon from the back surface extending through the first doped region;    (G) diffusing a dopant of second conductivity type into the back surface where silicon oxide was removed in step (D), forming regions of second conductivity type between regions of first conductivity type and a thermally grown oxide over the back surface; and    (H) forming first and second interdigitated metal contacts respectively ohmically contacting the regions of first conductivity type and the regions of second conductivity type, including printing a patterned etch resist over the thermally grown oxide from step (G) with arrays of small contact openings over the regions of first conductivity type and the regions of second conductivity type; removing the thermally grown oxide from the arrays of small contact openings; removing the patterned etch resist; and forming the first and second interdigitated metal contacts respectively ohmically contacting the regions of first conductivity type and the regions of second conductivity type.