TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The substrate is an electric conducting glass.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The electrode layer is an aluminum electrode when the intermediate layer is the PIN structure, where N is the N-type doped layer, I is the intrinsic layer and P is the P-type doped layer. The hydrogen/silane gas is filled when the I-layer is deposited on the N-layer of the NIP structure; the flow rate of the gas/silane is adjusted in the adjustment gradient of 20-3; the depositing time of each gradient is 3-15 minutes, the reaction gas pressure is 100-250 Pa, the power density is 0.03-0.06 W/cm2, the substrate temperature is 100-200 degrees C, the total reaction time is 40-80 minutes and the I-layer is 250-600 nm in thickness. The hydrogen/silane/phosphine gas is filled when the N-layer of the NIP structure is deposited on the substrate or the N-layer is deposited on the I-layer of the PIN structure; the flow rate of the hydrogen/silane is 1-50; the doping proportion of the phosphine/silane is 1:40-1:60; the reaction gas pressure is 100-900 Pa, the power density is 0.05-0.5 W/cm2, the substrate is at 100-500 degrees C, the reaction time is 1-10 minutes, and the N-layer is 15-25 nm in thickness. The hydrogen/silane/diborane/methane gas is filled when the P-layer of the PIN structure is deposited on the substrate; the flow rate of methane/silane is 1-3, the flow rate of hydrogen/silane is 10-50, the flow rate of diborane/silane is 1:50-1:100, the reaction gas pressure is 80-200 Pa, the power density is 0.01-1 W/cm2, the substrate is at 150-200 degrees C and the P-layer is 15-20 nm in deposition thickness. The hydrogen/silane/diborane gas is filled when the P-layer is deposited on the I-layer of the NIP structure; the flow rate of the hydrogen/silane is 100, the flow rate of the diborane/silane is 1:100, the reaction gas pressure is 550-750 Pa, the power density is 0.8-5 W/cm2, the substrate is at 50-100 degrees C and the P-layer is 10-20 nm in deposition thickness.