TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Cell: In the solar cell, the electrical conducting path is formed by a via at least extending through the base layer, and the insulating layer is provided at least around part of the via to provide insulation between the via and the base layer. Via is filled with a conductive material, which comprises oxide containing compounds or silicates, such as SiOx, AlOx, PbOx, ZrOx, TiOx BiOx, zinc oxide (ZnO), cadmium oxide (CdO), SnOx, BOx, and/or POx in the range of 0.1-10% w/w. The emitter layer is formed by emitter material and the via is at least partially filled with emitter material. Electrical conducting path is formed by a conductive material provided along side edges of the solar cell, where the insulating layer is provided in between the electrical conducting path and the base layer to provide insulation between the conductive material and the base layer. The solar cell is one of a solar cell with full metal rear side and a solar cell which is bifacial with a passivated rear surface and a pattern of conducting elements at the rear surface. Insulating layer is an oxide layer. It is a metal oxide layer or one of or a combination of SiOx, AlOx, PbOx, BiOx, ZrOx, TiOx, ZnO, SnOx, BOx, CdO, and/or POx. Insulating layer is a dielectric layer, such as a silicon oxide layer or a silicon-nitride layer. The insulation layer is provided to prevent direct electrical contact between the conductive material and the base layer. At least one collecting point comprises a contacting area facing away from the solar cell and a rear area facing the base layer, where the insulation layer is also provided between the rear area of the collecting point and the base layer. Preferred Method: In manufacturing solar cell, the electrical conducting path is a via at least extending through the base layer, and forming the insulating layer comprises forming the insulating layer at least around part of the via to provide insulation between the via and the base layer. Forming the at least one electrical conducting path comprises forming the at least one electrical conducting path of a conductive material or emitter material. Forming the at least one electrical conducting path comprises forming the at least one electrical conducting path along a side edge of the solar cell, where the insulating layer is provided in between the electrical conducting path and the base layer to provide insulation between the conductive material and the base layer. Forming the insulating layer comprises performing an oxidation action. Oxidation action is performed by an annealing action. Oxidation action is applied to the electrical conducting path. The electrical conducting path comprises a conductive compound and an oxide containing compound, and the oxidation action is an annealing action. Annealing action is performed at an annealing temperature in the range of 300-1000 degrees C, during a time period in the range of 0.1-1000 seconds. Oxidation action is applied to parts of the semiconductor substrate facing the electrical conducting path. Forming the insulating layer is performed by deposition of the insulating layer. Forming the at least one electrical conducting path comprises a process for removing material from the semiconductor substrate to create a hole along which the electrical conducting path is to be formed, where after the creation of the hole, the forming of the insulating layer is performed without an intermediate step of etching the walls of the hole. Removing of material from the semiconductor substrate comprises a laser-drilling process to create the hole at the location of the via to be formed.