TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: In the method, when the power source applies a voltage between the pair of electrodes, the pulse control circuit generates at least one voltage pulse during a half cycle, and a displacement current pulse between the pair of electrodes is generated with generation of the voltage pulse. The transparent conductive film is: fabricated by remote plasma; and formed with a substrate temperature at greater than or equal to 150 degrees C. Preferred Components: The pulse control circuit contains at least one choke coil, which goes into a saturated state during a pulse following a maximum pulse in which the power source applied a voltage between the pair of electrodes. The power source generates a single-frequency sine wave at 20 kHz to 3 MHz.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The gas containing oxygen atom contains ozone. The organic compound is zinc organic compound, which is a complex compound containing zinc and aluminum, or a zinc complex of formula (Zn(CxHyOz)m), where x, y, z and m are not defined. EXAMPLE - Atmospheric pressure plasma-enhanced chemical vapor deposition was performed on a polyimide film (substrate) by supplying ozone (generated by flowing oxygen (99.999%) at a rate of 10 l/minute, by passing it through a UV radiation device) between a flow path member and an insulating plate. To a vaporizer, diethyl zinc (Zn(C2H5)2) was supplied (4 g/hour) as a liquid and vaporized while heating to 100 degrees C, and this was used as the gaseous raw material. Using nitrogen gas as a carrier gas, the vaporized diethyl zinc was supplied between the insulating plates, so as to hold the pressure inside the vaporizer at 0.01 MPa above atmospheric pressure. Additionally, a toluene solution of aluminum triisobutylmethanate (0.05 mol/l) was prepared and introduced into the vaporizer at a flow rate of 0.1 g/hour, and heated to 200 degrees C, to obtain the gaseous raw material. Using nitrogen gas as a carrier gas (flow rate 2 l/minute), the gaseous raw material was supplied between the insulating plates, so as to hold the pressure inside the vaporizer at 0.01 MPa above atmospheric pressure, and it was mixed with the diethyl zinc to form the film forming gas. Then a voltage of amplitude 4 kV was applied between the ground side electrode and the high voltage electrode, using a power source with a 150 kHz sine wave power source, and the plasma excitation power was maintained at 1000 W, thus to obtain the transparent conductive film.