NOVELTY - The manufacturing method of a crystal body made from a semiconducting material such as a solar cell substrate crystal, comprises arranging a germ body in a melt from the semiconductor material in a crucible (1), and carrying out a first directional hardening a crystal body portion of the crystal body from the melt originating from the germ body along a first solidification direction (E1) in which a first time-dependent temperature profile is produced into the melt in such a way that a first isothermal surface portion is moved itself along the first solidification direction.    USE - Manufacturing method useful for producing a crystalline body from a semiconductor material.    ADVANTAGE - The manufacturing method ensures economical production of a crystalline body from a semiconductor material with less time consuming manner.    DETAILED DESCRIPTION - The manufacturing method of a crystal body made from a semiconducting material such as a solar cell substrate crystal, comprises arranging a germ body in a melt from the semiconductor material in a crucible (1), carrying out a first directional hardening a crystal body portion of the crystal body from the melt originating from the germ body along a first solidification direction (E1) in which a first time-dependent temperature profile is produced into the melt in such a way that a first isothermal surface portion is moved itself along the first solidification direction, and carrying out a second directional hardening of the crystal body from the melt originating from the crystal body portion along a second solidification direction (E2) in which a second time-dependent temperature profile is produced into the melt in such a way that a second isothermal surface portion is moved along the second solidification direction. The first solidification direction and the second solidification direction are arranged to each other in an angle ( beta ), which lies between the first solidification direction and the second solidification direction in an area of a right angle. The first directional hardening is provided along two or more first solidification directions, which are aligned in a first solidification level. The first directional hardening is carried out along the first solidification direction. The germ body is stretched along an extension direction and the angle is formed between the first solidification direction and the extension direction of the stretched germ bodies. The angle ( alpha ) lies between the first solidification direction and the extension direction of the stretched germ body in the area of the right angle. The first solidification direction, the second solidification direction and/or the extension direction of the stretched germ body are parallely aligned to a crucible inner surface or to the crucible inner surfaces of the crucible. The germ body is arranged on the crucible inner surface of the crucible and is arranged along a crucible inner edge (13) of the crucible, which forms a contact line between two crucible inner surfaces. The germ body is arranged along the crucible inner edge in such a way that the crucible inner edge is completely covered and has a length of 20% of the length of the crucible inner edge of the crucible and the crucible inner edge is arranged in such a way that a longitudinal edge of the germ body is partially covered on the crucible inner edge, is concentrically arranged on the crucible inner surface of the crucible, and is attached on the crucible. The germ body is arranged into the crucible and the crucible is loaded with the semiconductor material after the arrangement of the germ body. The crucible is loaded after the first directional hardening and before the second directional hardening with additional semiconductor material. The germ body is formed from the semiconductor material. An INDEPENDENT CLAIM is included for a manufacturing device for producing crystal body from the semiconductor material.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of a crucible.    Crucible (1)    Crucible bottom (12)    Crucible inner edge (13)    First solidification direction (E1)    Second solidification direction. (E2)