NOVELTY - The method for producing a wafer equivalent, comprises introducing a first n-doped or p-doped semiconductor layer (4) partly or wholly on one side of a flat perforated substrate (1), whose perforation consists of holes (3) continuously from one to other flat sides of the substrate, and recrystallizing the introduced layer, where the holes of the perforated substrate are closed during the production. The recrystallization is carried out by zone-melting recrystallization. The surface of the substrate is partially or completely covered with an encapsulating layer (2).    USE - Method for producing a wafer equivalent, which is useful in photovoltaic and as solar cells, sensor and/or LED (claimed).    ADVANTAGE - The method ensures economical production of the wafer equivalent in an efficient manner.    DETAILED DESCRIPTION - The method for producing a wafer equivalent, comprises introducing a first n-doped or p-doped semiconductor layer (4) partly or wholly on one side of a flat perforated substrate (1), whose perforation consists of holes (3) continuously from one to other flat sides of the substrate, and recrystallizing the introduced layer, where the holes of the perforated substrate are closed during the production. The recrystallization is carried out by zone-melting recrystallization. The surface of the substrate is partially or completely covered with an encapsulating layer (2) and then the first semiconductor layer is deposited on the encapsulating layer. A further doped semiconductor layer is deposited partly or wholly on the first n-doped or p-doped semiconductor layer before or after the recrystallization and has the same doping and the first n-doped or p-doped semiconductor layer but with less doping concentration. After the deposition of the further semiconductor layer and before or after the recrystallization, an additional doped semiconductor layer is deposited partly or wholly on the further semiconductor layer and has the opposite doping and the further semiconductor layer. The holes of the perforated substrate are closed before the deposition of the additional doped semiconductor layer by the deposited materials of the first semiconductor layer, the encapsulating layer and/or further semiconductor layer. Metal contacts (7, 8) are introduced on the final layers on the both flat sides as final process step. The deposition of the first semiconductor layer, the encapsulating layer, the further semiconductor layer and/or the additional semiconductor layer takes place by chemical and/or physical gas phase deposition. The substrate contains materials, which are selected from group of materials that do not soften, bent and/or decompose at 1420 degrees C, dT/dt and dT/dx with an adapted thermal expansion coefficient of 4.6x 10-6 K-1 at 1600 K, where dT/dt is equal to 10 K/s and dT/dx is equal to 10 K/mm. The first semiconductor layer, the further semiconductor layer and/or the additional semiconductor layer consist of n-doped or p-doped silicon. The encapsulating layer contains materials, which are selected from group of materials that that do not react, decompose and/or tear at 1420 degrees C, dT/dt and dT/dx with an adapted thermal expansion coefficient of 4.6x 10-6 K-1 at 1600 K, where dT/dt is equal to 10 K/s and dT/dx is equal to 10 K/mm. The thickness of the substrate is 100-1000 mu m. The encapsulating layer is deposited with a layer thickness of 100-20 mu m, the first semiconductor layer is deposited with a layer thickness of 0.1-5 mu m, the further semiconductor layer is deposited with a layer thickness of 1-50 mu m and/or the contacts are deposited with a layer thickness of 0.1-100 mu m. An INDEPENDENT CLAIM is included for a wafer equivalent.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a wafer equivalent.    Substrate (1)    Encapsulating layer (2)    Holes (3)    First semiconductor layer (4)    Metal contacts. (7, 8)