NOVELTY - The method of forming an etch resist pattern on a silicon semiconductor substrate having a silicon nitride anti-reflective layer, comprises modifying surface energy of the anti-reflective layer by contacting with a composition (0.01-1 wt.%) comprising a fluorine-containing surfactant, applying an etch resist to the treated layer to create a pattern of UV etch-resist comprising exposed areas of the anti-reflective layer and etch-resist covered areas of the anti-reflective layer, and contacting the exposed areas of the anti-reflective layer with a chemical etchant composition.    USE - The method is useful for forming an etch resist pattern on a silicon semiconductor substrate to produce silicon solar cells.    ADVANTAGE - The method ensures efficient and economical production of high efficiency silicon solar cells in a continuous, high throughput line with less number of process steps and no or minimal interruption by forming a high definition etch resist pattern on a silicon semiconductor substrate.    DETAILED DESCRIPTION - The method of forming an etch resist pattern on a silicon semiconductor substrate having a silicon nitride anti-reflective layer, comprises modifying surface energy of the anti-reflective layer by contacting with a composition (0.01-1 wt.%) comprising a fluorine-containing surfactant, applying an etch resist to the treated layer to create a pattern of UV etch-resist comprising exposed areas of the anti-reflective layer and etch-resist covered areas of the anti-reflective layer, contacting the exposed areas of the anti-reflective layer with a chemical etchant composition, stripping away the etch resist, and applying a metal coating on the exposed areas. The metal coating is applied created by electroless or electrolytic plating of a metal, and sintered to improve adhesion of the metal coating to the silicon substrate. The etch resist is applied to the substrate by an off contact method, and inkjet printing.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a method for forming an etch resist pattern on a silicon semiconductor substrate.