NOVELTY - A thin Group II-VI monocrystalline semiconductor layer (620) is mounted to a substrate by implanting expungement ions into first face of first substrate such that concentration of implanted expungement ions achieves maximum at predetermined depth from first face; growing monocrystalline Group II-VI semiconductor layer on first face of first substrate; attaching second face of Group III-VI semiconductor layer to second substrate (616); and using expungement ions to expunge portion of first substrate.    USE - Method is used for mounting thin Group II-VI monocrystalline semiconductor layer to a substrate for solar cell and space applications.    ADVANTAGE - The silicon can continue to be used as host for growing CdTe layer, thus silicon substrate can either be greatly reduced or entirely omitted in final semiconductor structure using ion-cut technology. The removal of silicon substrate allows growth of homojunction with optimal bandgap on newly exposed CdTe surface, thus allowing solar cell to be made flexible, to be lighter and to have a lower series resistance.    DETAILED DESCRIPTION - Thin Group II-VI monocrystalline semiconductor layer (620) is mounted to a substrate by implanting expungement ions into first face of first substrate such that concentration of implanted expungement ions achieves maximum at predetermined depth from first face; growing monocrystalline Group II-VI semiconductor layer on first face of first substrate; attaching second face of Group II-VI semiconductor layer to second substrate (616); and using expungement ions to expunge portion of first substrate extending from depth to second face from a remainder of first substrate extending from depth to first face of first substrate, from Group II-VI semiconductor layer, and from second substrate. The first substrate has second face opposed to first face. The Group II-VI semiconductor layer has a first face proximate to first substrate and second face remote from first substrate.    DESCRIPTION OF DRAWING(S) - The drawing is a highly magnified schematic cross sectional view showing a semiconductor workpiece.    Upper surface of Group II-VI semiconductor layer (606)    Upper surface of conductive layer (612)    Lower surface (614)    Second substrate (616)    Monocrystalline semiconductor layer (620)