NOVELTY - The method for producing semiconductor layers in a coating chamber (1), comprises applying a first semiconductor material (3) and a second semiconductor material (4) to a substrate (2), where the first and second semiconductor materials have different compositions and the second semiconductor is applied to the first semiconductor material, removing the substrate from the coating chamber after application of the first and second semiconductor materials, and cleaning inner surfaces (11) of the coating chamber of the second semiconductor material.    USE - Method useful for producing semiconductor layers in a coating chamber.    ADVANTAGE - The method ensures production of semiconductor layers in a coating chamber with less consumption of time and material.    DETAILED DESCRIPTION - The method for producing semiconductor layers in a coating chamber (1), comprises applying a first semiconductor material (3) and a second semiconductor material (4) to a substrate (2), where the first and second semiconductor materials have different compositions and the second semiconductor is applied to the first semiconductor material, removing the substrate from the coating chamber after application of the first and second semiconductor materials, cleaning inner surfaces (11) of the coating chamber from the second semiconductor material by means of a first cleaning method and a second cleaning method, where the first semiconductor material remains on the inner surfaces, and applying the first semiconductor material on the inner surfaces. The second semiconductor material has a dopant, which is not present in the first semiconductor material. The first semiconductor material is an intrinsic semiconductor material. The first and second semiconductor materials are applied to the substrate as parts of a solar cell. The first cleaning method is a dry etching method or a plasma etching with nitrogen trifluoride and/or fluorine.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of a method for producing semiconductor layers in a coating chamber.    Coating chamber (1)    Substrate (2)    First semiconductor material (3)    Second semiconductor material (4)    Inner surfaces. (11)