NOVELTY - Manufacturing at least one electrical contact of a silicon solar cell structure comprises patterning the metal oxide or carbide layer (16) by laser patterning, where the step of laser patterning comprises laser ablation of parts of the metal oxide or carbide layer (16); and forming at least one metal contact (17) on the patterned metal oxide or carbide layer (16) by single-sided electroplating.    USE - The method is used for manufacturing at least one electrical contact of a silicon solar cell structure (claimed).    ADVANTAGE - The silicon solar cell structure has enhanced speed and uniformity.    DETAILED DESCRIPTION - Manufacturing at least one electrical contact of a silicon solar cell structure comprises providing a silicon substrate (11); forming at least one silicon layer (12) on at least one side of the silicon substrate (11), where the silicon substrate (11) and the silicon layer (12) are doped in such a way that a pn junction is formed between the silicon substrate (11) and the silicon layer (12); forming at least one transparent conductive oxide (TCO) layer (14) on the at least one silicon layer (12); forming a metal oxide or carbide layer (16) on the TCO layer (14), where the metal oxide or carbide layer (16) has a lower conductance than the TCO layer (14); patterning the metal oxide or carbide layer (16) by laser patterning, where the step of laser patterning comprises laser ablation of parts of the metal oxide or carbide layer (16); and forming at least one metal contact (17) on the patterned metal oxide or carbide layer (16) by single-sided electroplating, where the negative plating terminal is electrically connected to the n-doped silicon side of the p-n junction being on the side opposite to the side of the structure where the at least one metal contact (17) is formed, so that the solar cell structure is operated in forward bias mode during electroplating.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a silicon solar cell structure.    Silicon substrate (11)    Silicon layer (12)    TCO layer (14)    Metal oxide or carbide layer (16)    Metal contact (17)