NOVELTY - The schottky diode (100a) comprises a semiconductor layer (104) including a semiconducting material, a semimetal stack (102), an ohmic contact layer (106), and a zero gap semiconductor layer including a sheet of graphene. The semimetal stack: is formed on the semiconductor layer; is doped; and includes intercalated impurity atoms, intercalated bromine atoms, graphene layers (102a, 102b, 102c, 102d) and a graphite layer. The semiconductor layer, the stack and the zero gap semiconductor layer form a schottky barrier. The zero gap semiconductor layer is formed on the semiconductor layer.    USE - The schottky diode is useful in a semimetal semiconductor FET, a zero gap semiconductor FET, a high electron mobility transistor, a zero gap semiconductor high electron mobility transistor (all claimed), LEDs, optical device applications, MOSFETs, metal semiconductor field effect transistors, solar cells, other silicon technologies, spintronic applications, and low-noise amplifiers, where the semimetal semiconductor field effect transistor or the zero gap semiconductor semiconductor field effect transistor are useful for sensing and detecting technologies and national security military applications.    ADVANTAGE - The schottky diode exhibits good rectifying characteristics, high thermal conductivity and breakdown strength, improved performance, excellent current-voltage characteristics, and reduced leakage current.    DETAILED DESCRIPTION - The schottky diode (100a) comprises a semiconductor layer (104) including a semiconducting material, a semimetal stack (102), an ohmic contact layer (106), and a zero gap semiconductor layer including a sheet of graphene. The semimetal stack: is formed on the semiconductor layer; is doped; and includes intercalated impurity atoms, intercalated bromine atoms, graphene layers (102a, 102b, 102c, 102d) and a graphite layer. The semiconductor layer, the stack and the zero gap semiconductor layer form a schottky barrier. The zero gap semiconductor layer is formed on the semiconductor layer, and is doped with an atomically thin dopant. INDEPENDENT CLAIMS are included for:    (1) a semimetal semiconductor field effect transistor;    (2) a zero gap semiconductor semiconductor field effect transistor;    (3) a high electron mobility transistor; and    (4) a zero gap semiconductor high electron mobility transistor.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a schottky diode including a semimetal stack.    Schottky diode (100a)    Semimetal stack (102)    Graphene layers (102a, 102b, 102c, 102d)    Semiconductor layer (104)    Ohmic contact layer. (106)