NOVELTY - The method comprises providing a glass-substrate/p-i-n- junction configuration with a glass/air interface having antireflection ability and then diffusion and antireflex etching the glass surface for the air/glass interface to provide for the antireflection and for a desired light scattering ability, and protecting the p-i-n junction configuration from the etching of glass surface by temporary mechanical unit, a carrier arrangement with a clamping frame, a removable adhesive film or white reflector paint. The etching is performed during a first time span to provide for antireflection ability.    USE - The method is useful for manufacturing a thin-film, silicon based solar cell device.    ADVANTAGE - The method is capable of effectively, rapidly and economically manufacturing the thin-film, silicon based solar cell device with improved conversion efficiency and performance, and excellent optical properties.    DETAILED DESCRIPTION - The method comprises providing a glass-substrate/p-i-n- junction configuration with a glass/air interface having antireflection ability and then diffusion and antireflex etching the glass surface for the air/glass interface to provide for the antireflection and for a desired light scattering ability, and protecting the p-i-n junction configuration from the etching of glass surface by temporary mechanical unit, a carrier arrangement with a clamping frame, a removable adhesive film or white reflector paint. The etching is performed during a first time span to provide for antireflection ability and a second time span to provide for an increased amount of light scattering, and performed by reactive ion etching. The glass-substrate/p-i-n junction configuration includes a first electrode, semiconductor thin-film p-i-n or n-i-p junctions, a second electrode and a transparent substrate of glass with a layer of a transparent conductive oxide, and is a glass/transparent conductive oxide (TCO)/hydrogenated amorphous silicon p-i-n/TCO structure. The antireflex and scattering ability is established by etching after providing the glass-substrate/p-i-n- junction configuration. A laser patterning is performed through the glass/air interface before performing the etching during the second time span. The frame provides sealing unit that allow to expose the glass surface to be etched.    DESCRIPTION OF DRAWING(S) - The diagram shows a graphical view of a measured total reflection coefficient of a series of glass/transparent conductive oxide (TCO)/hydrogenated amorphous silicon p-i-n/TCO structure.