TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The organic component is a light-emitting component or an organic solar cell. The organic component comprises an anode, which is closer to the substrate than the cathode. The anode is transparent, and the substrate and/or the anode are reflective.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The doping material is incorporated into the matrix material. The doping material and the matrix material are formed by two layers, which are in physical contact. The doping material and the matrix material are mixed together, preferably in the form of a doped semiconductor layer. Preferred Components: The matrix material present in the mixture is N4,N4,N4'',N4''-tetra((1,1'-biphenyl)-4-yl)-(1,1':4',1''-terphenyl)-4,4''-diamine. The doping material of the mixture comprises 2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(perfluorophenyl)-acetonitrile),2,2',2''-(cyclopropane-1,2,3-triyliden)tris(2-(perfluoropyridin-4-yl)-acetonitrile),2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(4-cyanoperfluorophenyl)-acetonitrile),2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(2,3,5,6-tetrafluoro-4-(trifluoromethyl)phenyl)-acetonitrile,2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(2,3,5,6-tetrafluoro-4-(trifluoromethyl)phenyl)-acetonitrile) or (cyclopropane-1,2,3-triylidene)tris(2-(2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenyl)-acetonitrile). EXAMPLE - Hole transporting material (produced by: 4,4'-diiodo-terphenyl (70 g), bis(biphenylyl) amine (140 g), potassium carbonate (45 g), Marlotherm (RTM: Heat transfer medium) (220 ml) and toluene (0.3 ml) were provided into a round-bottomed flask. The flask was heated to 110 degrees C and copper catalyst (20 g) was added and was heated to 195 degrees C within 3.5 hours. This temperature was maintained for 42 hours. Then the product was filtered off under vacuum) (50 nm thick layer) was doped with dopant ((2E,2'E,2''E)-2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(perfluorophenyl)-acetonitrile)). The doped semiconductor layer was prepared by mixed evaporation of the produced hole transporting material and the dopant in high vacuum. The concentration of the dopant in the matrix was 3 mole-%. The evaporation temperature of the dopant was 372 degrees C. The doped semiconductor layer showed a high conductivity of 6-10-4 S/cm and a temperature stability of 133 degrees C.