TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: The device comprises several electrically conducting gate electrodes disposed on a substrate, where the gate dielectric layer disposed on the electrically conducting gate electrodes, and the thin organic semiconductor film disposed on the dielectric layer substantially overlapping the gate electrodes; and several sets of the source electrodes and drain electrodes disposed on the thin organic semiconductor film such that each of the sets are in alignment with each of the gate electrodes. The thin semiconductor film consists of the arylene diimide compound. In (A2), the multiplicity of the thin-film transistor devices is disposed on a non-participating substrate that is optionally flexible. Preferred Method: The method (M1) further involves c) thermally converting the arylene diimide precursor to form an arylene diimide compound to form an organic semiconductor layer, and d) depositing at least one set of electrically conductive source electrodes and drain electrodes on the organic semiconductor layer. In the method (M1), the arylene diimide precursor is deposited on the substrate by solution-phase deposition or sublimation and the substrate has a temperature of not greater than 250 degrees C during deposition. The arylene diimide precursor is thermally converted to the arylene diimide compound by imagewise thermal exposure. The arylene diimide precursor is thermally converted using a lithographic method. In (M1), the electrically conductive source and drain electrode are spaced apart so that they are separated by, and electrically connected with, the organic semiconductor layer, and e) forming a gate electrode spaced apart from the organic semiconductor layer. The method (M1) preferably involves, not necessarily in order, a3) providing an electrically conductive substrate, b3) providing a gate electrode material over the substrate, c3) providing a gate dielectric over the gate electrode material, d3) depositing an organic solvent solution or dispersion of an arylene diimide precursor that is an amic acid or amic ester precursor over the gate dielectric, and e3) evaporating the organic solvent to produce a thin film of the arylene diimide precursor. The steps (a3)-(e3) are performed in the order listed and the electrically conductive substrate is flexible.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The arylene diimide compound is the thermal dehydration imidization product of an arylene tetracarboxylic acid or ester precursor that is represented by the formula (I) or (II). The arylene diimide precursor layer further comprises an amine or acid anhydride catalyst.Ar=anthracene, naphthalene, or perylene nucleus (where four carbonyl groups are attached directly to peri carbon atoms);A1 and A2=(hetero)aryl, alkyl, fluoroalkyl, cycloalkyl, or heterocyclyl;andR=H, alkyl or cycloalkyl. SPECIFIC COMPOUNDS - 50 Compounds are specified as (I) or (II) e.g. 4,8-bis-phenethylcarbamoyl-naphthalene-1,5-dicarboxylic acid (IA); 4,8-bis-phenethylcarbamoyl-naphthalene-1,5-dicarboxylic acid dimethyl ester; 4,8-bis-(2-meta-tolyl-ethylcarbamoyl)-naphthalene-1,5-dicarboxylic acid; 4,8-bis-phenylcarbamoyl-naphthalene-1,5-dicarboxylic acid diethyl ester; and 4,8-bis-phenylcarbamoyl-naphthalene-1,5-dicarboxylic acid.