NOVELTY - A semiconductor solar cell or photodetector having improved incident radiation absorption, comprises a textured layer disposed at the second surface, the textured layer comprising cusped features disposed with bases of the cusped features arranged away from the first surface and adapted to form a diffusive radiation scattering layer for infrared wavelengths of radiation.    USE - The semiconductor solar cell or photodetector is used for detecting light.    ADVANTAGE - The semiconductor solar cell or photodetector has improved incident radiation absorption. The semiconductor solar cell or photodetector comprises backside texturing by cusps to improve infrared response.    DETAILED DESCRIPTION - A semiconductor solar cell or photodetector having improved incident radiation absorption, comprises a first silicon substrate having a substantially planar first surface available to the incident radiation and a second surface; a layer disposed at the first surface, the layer being transparent to visible light and infrared wavelengths of incident radiation and internally reflective to infrared wavelengths of radiation scattered within the first silicon substrate; and a textured layer disposed at the second surface, the textured layer comprising cusped features disposed with bases of the cusped features arranged away from the first surface and adapted to form a diffusive radiation scattering layer for infrared wavelengths of radiation. An INDEPENDENT CLAIM is a method of manufacturing a semiconductor solar cell or photodetector with improved incident radiation absorption, by disposing a first layer, transparent to visible light and infrared wavelengths of incident radiation and internally reflective to infrared wavelengths of radiation, on a substantially planar first surface of a first silicon substrate; disposing a second layer on a second surface, substantially parallel to the first surface, of a first silicon substrate; and texturing the second layer into cusped features disposed with bases of the cusped features arranged away from the first surface, where a diffusive radiation scattering layer for infrared wavelengths of radiation is formed.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a thin film microcrystalline silicon solar cell/photodetector.    Front semiconductor junction layer (701)    Back semiconductor junction layer (702)    Textured back layer (703)    Smooth front layer (704)    Transparent conductive oxide (705)