NOVELTY - Copper/indium/gallium/selenium (CIGS) solar cell structure, comprises: substrate (10); molybdenum thin film layer (20) configured on substrate; molybdenum/aluminum, molybdenum/copper, molybdenum/copper/aluminum, or molybdenum/copper/aluminum/silver alloy thin film layer (50) on molybdenum thin film layer having thickness of 0.1-0.25 mu m by continuously sputtering, where alloy has specific atomic proportion of elements and electrical conductivity of 20-25x 106, 30-35x 106, 30-35x 106, or 35-40x 106 /m Omega respectively; and CIGS thin film layer (80) deposited on alloy thin film layer.    USE - As copper/indium/gallium/selenium (CIGS) solar cell structure (claimed).    ADVANTAGE - In CIGS solar cell structure, alloy thin film layer is provided between molybdenum thin film layer and CIGS thin film layer, serving as conductive layer of CIGS solar cell structure, whereas in prior art CIGS thin film layer is directly deposited upon molybdenum thin film layer and often peels off from film, and is featured with unsatisfactory conductivity and resistance coefficient. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different atomic proportions. Thus the CIGS solar cell structure solves the problems of conventional technologies, and improves electrical conductivity, reduces resistance coefficient of molybdenum thin film layer, and thus reduces thickness of molybdenum thin film layer so as to avoid peeling off of CIGS thin film layer.    DETAILED DESCRIPTION - A copper/indium/gallium/selenium (CIGS) solar cell structure, comprises: substrate (10); molybdenum thin film layer (20) configured on substrate; molybdenum/aluminum alloy, molybdenum/copper alloy, molybdenum/copper/aluminum alloy, or molybdenum/copper/aluminum/silver alloy thin film layer (50) configured on molybdenum thin film layer by continuously sputtering with sputtering machine; and CIGS thin film layer (80) deposited on the alloy thin film layer, where atomic proportion of molybdenum to aluminum in molybdenum/aluminum alloy layer is 6-9:1-2, and molybdenum/aluminum alloy layer has thickness of 0.1-0.25 mu m and electrical conductivity of 20-25x 106/m Omega ; atomic proportion of molybdenum to copper in molybdenum/copper alloy layer is 5-8:1-4, and molybdenum/copper alloy layer has thickness of 0.1-0.25 mu m and electrical conductivity of 30-35x 106/m Omega ; atomic proportion of molybdenum to copper to aluminum in molybdenum/copper/aluminum alloy layer is 5-7:3-5:1-2, and molybdenum/copper/aluminum alloy layer has thickness of 0.1-0.25 mu m and electrical conductivity of 30-35x 106/m Omega ; and atomic proportion of molybdenum to copper to aluminum to silver in molybdenum/copper/aluminum/silver alloy layer is 5-7:3-4:1-1.5:2-2.5, and molybdenum/copper/aluminum/silver alloy layer has thickness of 0.1-to 0.25 mu m and electrical conductivity of 35-40x 106/m Omega . The substrate is a glass substrate or flexible metal substrate. The CIGS layer has composition in form of CuyIn(1-x)GaxSe2, (where y is 0.75-1, and x is 0.15-0.35).    DESCRIPTION OF DRAWING(S) - The figure shows structural diagram illustrating the CIGS solar cell structure.    Substrate (10)    Molybdenum thin film layer (20)    Alloy thin film layer (50)    CIGS thin film layer (80)