TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The porous inorganic gyroid network is silicon dioxide (SiO2) (preferred), titanium dioxide (TiO2) or barium titanate (BaTiO3). The substrate is a glass substrate. The glass substrate is an indium tin oxide (ITO) glass substrate or carbon-coated glass substrate. The substrate is a silicon wafer or silicon oxide substrate. The layer of porous inorganic gyroid network has a thickness of 100-200 nm. The thickness is 120-160 (preferably 130-150) nm. The substrate is quartz, glass, or semiconductor. The inorganic filler is a ceramic oxide or the mixed oxide. The inorganic filler is SiO2, TiO2, or BaTiO3. The filler precursor is tetraethyl orthosilicate, titanium(IV) isopropoxide; or barium hydroxide/titanium(IV) isopropoxide. The inorganic filler is SiO2, and the filler precursor is tetraethyl orthosilicate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent is dichlorobenzene (preferred), chlorobenzene, dichloromethane, toluene or tetrahydrofuran. The organic material used to modify the substrate is hydroxyl terminated polystyrene, hydroxyl terminated poly(vinylpyridine), or hydroxyl terminated poly(acrylonitrile). The organic material used to modify the substrate is hydroxyl terminated polystyrene. The hydroxyl terminated polystyrene has a molecular weight of 5000-10000. The non-preferential solvent is dichloromethane, chloroform or dichloromethane.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The block copolymer is poly(styrene)-poly(L-lactide) chiral block copolymer, the first polymer blocks are poly(L-lactide), and the second polymer blocks are polystyrene. The coating layer has a thickness of 100-200 (preferably 130-150) nm. The volume fraction of the first polymer blocks in the block copolymer is 36-50%, preferably 40%. The first polymer blocks are selected degraded by hydrolysis. The second polymer block matrix is removed by using an organic solvent. The second polymer block matrix is removed by using an organic solvent of tetrahydrofuran or toluene. The second polymer block matrix is removed by using UV light exposure. The second polymer block matrix is removed by using UV light exposure with a wavelength of 254 nm and an intensity of 3 mW/cm2. Preferred Process: The coating is spin coating (preferred), slot coating, gravure coating, or blade coating. The spin coating has spin rate of 1000-5000 rpm. The spin coating has spin rate of 1500-4000 rpm. The organic solvent solution has a concentration of the block copolymer of 1.5-10 (preferably 3) wt.%. 17. The process further comprises aging the inorganic filler filled in the film under controller humidity at room temperature to 70 degrees C for a period of 1-6 hours, prior to step (e). EXAMPLE - No suitable example given.