TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The functional group comprises a halide. The compound comprising the polymerizable organosilane and the halide is silicon chloride compound (C13H25SiCl3). The functional group comprises an amine to hydrolyze and to attach to the porous dielectric. The compound comprising the polymerizable organosilane and the amine comprises (dimethylamino)silane or octadecyldimethyl(dimethylamino)silane. The compound further includes at least one linking group having a structure of formula ((CH2)n). The layer formed as the result of the exposing is a conformal thin film. The polymerized organosilane is formed on the porous dielectric region and not on the conductive region. The polymerized organosilane further comprises a halide for facilitating attachment with the porous dielectric. The polymerized organosilane includes a hydrolyzable group for facilitating attachment with the porous dielectric region, where the hydrolyzable group does not include an alkyl group. The polymerized organosilane comprises (dimethylamino)silane, an octadecyldimethyl(dimethylamino)silane, dodecyldimethyl(methoxy)silane, a trimethoxysilane, a triethoxysilane or silicon chloride compound (C12H25SiCl3).n = greater than or equal to 0, where n is selected to match a pore size (preferably 11-50 Angstroms) of the porous dielectric.Preferred Method: The method further comprises post-processing the substrate to polymerize the compound, removing contamination from the porous dielectric and a conductive region of the substrate prior to the exposing, and removing the contamination from the conductive region after the formation. The post-processing comprises physical modifications, chemical modifications, electrical modifications, thermal modifications, magnetic modifications, photolytic modifications, cleaning, surface modification, surface preparation, deposition, dispensing, reaction, functionalization, etching, planarization, chemical mechanical planarization, electrochemical mechanical planarization, lithography, patterning, implantation, thermal treatment, infrared treatment, UV treatment, electron beam curing, X-ray treatment, vaporization, annealing, crosslinking, polymerizing or oligomerizing.