NOVELTY - The method of making a semiconductor device, comprises forming discrete rows or zones of particles on a web substrate, forming a first semiconductor layer of a first conductivity type over the web substrate, forming a second semiconductor layer of a second conductivity type over a first side of the first semiconductor layer, forming a first electrode (525) layer over the second semiconductor layer, forming a handle web substrate over the first electrode layer, and delaminating the web substrate from the first semiconductor layer.    USE - The method is useful for making a semiconductor device including a monolithic photovoltaic device.    ADVANTAGE - The method is capable of effectively and economically making the semiconductor device including the monolithic photovoltaic device with high efficiency.    DETAILED DESCRIPTION - The method of making a semiconductor device, comprises forming discrete rows or zones of particles on a web substrate, forming a first semiconductor layer of a first conductivity type over the web substrate, forming a second semiconductor layer of a second conductivity type over a first side of the first semiconductor layer, forming a first electrode (525) layer over the second semiconductor layer, forming a handle web substrate over the first electrode layer, delaminating the web substrate from the first semiconductor layer, forming a second electrode layer over a second side of the first semiconductor layer such that the first and second electrode layers are in electrical contact with each other, separating the first and second electrode layers into discrete first and second electrodes, forming a resist layer over the second side of the first semiconductor layer such that the resist layer fills the openings located in the rows or zones and fills unintentionally created hole in the first semiconductor layer due to a presence of particle or other defect on the substrate web or in the first or the second semiconductor layer in a location other than one of the rows or zones, selectively exposing the resist layer such that the resist layer is stabilized in the unintentionally created hole, and removing or washing the resist layer from all locations. An opening extends through the first and second semiconductor layers, and is formed by laser or mechanical scribing. The semiconductor device comprises a monolithic photovoltaic device. The photovoltaic device comprises: a series of photovoltaic cells including a first photovoltaic cell defined by first and second electrode pair and a second photovoltaic cell (54) defined by another first electrode and second electrode pair; and first electrodes separating trenches (520) that are offset from second electrodes separating trenches. An overlap portion of the first electrode of the first photovoltaic cell overlaps an overlap portion of the second electrode of the second photovoltaic cell. A part of the overlap portion of the second electrode of the second photovoltaic cell extends through the opening to electrically contact a part of the overlap portion of the first electrode of the first photovoltaic cell. Each of the discrete first electrodes is in electrical contact with a respective one of the discrete second electrode. The opening comprises: discrete openings, which are arranged in row or zone in a direction perpendicular to a movement direction of the web substrate such that the first and the second semiconductor layers remain continuous between the discrete openings; a single opening positioned such that the first and the second semiconductor layers remain continuous on side of the single opening; and a trench, which extends perpendicular to a movement direction of the web substrate. The single opening divides the first and the second semiconductor layers into discrete sections, which comprise a portion of the first and second semiconductor layers. A surface of the web substrate comprises: groove or ridge, which extends across an entire width of the web substrate perpendicular to a movement direction of the web substrate; or discrete grooves or ridges extending in a width direction of the web substrate perpendicular to a movement direction of the web substrate. The rows or zones extend in a direction perpendicular to the movement direction of the web substrate. The step of delaminating the web substrate from the first semiconductor layer causes the particles to drop away from their location and forms the openings by directly an absence of the particles or indirectly through inducing fracture in a nearby area of the first and the second semiconductor layers. The step of forming the resist layer comprises coating the resist layer over the second side of the first semiconductor layer, which is moved by the handle web substrate. The step of exposing the resist layer comprises: exposing the resist layer through a first mask, which prevents exposure of the resist layer located in each one of the openings located in the rows or zones while the handle web substrate is moving; and exposing the resist layer through the first and the second semiconductor layers, which act as a second mask such that the resist layer is stabilized in the unintentionally created hole at locations where the first and the second semiconductor layers are missing. The step of forming the second electrode layer comprises forming the second electrode layer over the second side of the first semiconductor layer and in the opening followed by scribing the second electrode layer after the step of delaminating to separate the second electrode layer into discrete second electrodes. The first and second semiconductor layers and the first electrode layer are formed by sputtering over the web substrate while the web substrate is moving, and the second electrode layer is formed by sputtering over the second side of the first semiconductor layer while the handle web substrate is moving. The web substrate comprises a metal web, the first electrode layer comprises a transparent conductive layer, and the handle web substrate comprises a polymer web. The second electrode of the second photovoltaic cell electrically shorts: a first portion (521) of the first semiconductor layer to a first portion (523) of the second semiconductor layer; a second portion of the first semiconductor layer to a second portion of the second semiconductor layer; the first portion of the first semiconductor layer to the second portion of the first semiconductor layer; or the first portion of the second semiconductor layer to the second portion of the second semiconductor layer. INDEPENDENT CLAIMS are included for:    (1) a method of making a photovoltaic device; and    (2) a photovoltaic device.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a semiconductor device.    Second photovoltaic cell (54)    Trenches (520)    First portion of a first semiconductor layer (521)    First portion of a second semiconductor layer (523)    First electrode. (525)