TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The alkaline compound of formulation (F1) includes at least one of KOH, sodium hydroxide (NaOH), TMAH, and ammonium hydroxide (NH4OH). The alkaline compound of formulation (F2) includes potassium hydroxide (KOH). The pre-cleaning solution includes alkaline chemicals, inorganic or organic acid additives, and at least one of nonionic or anionic surfactants. The alkaline chemicals of the pre-cleaning solution include at least one of NaOH, KOH, TMAH, or NH4OH.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Formulation: The texture formulation (F1) further comprises low molecular weight organic carboxylic acids for p-type silicon wafer texture; and an organic compound containing surface active cations in their formula for n-type silicon texture. The crystalline silicon texture formulation (F2) further comprises silica in an amount sufficient to initiate pyramid formation. Preferred Components: The aliphatic diol includes organic 4-10C diols (preferably at least one of butanediol, pentanediol, hexanediol, heptanediol, octanediol, and their derivatives, where the derivatives include at least one of 3-methyl-1,5-pentanediol, 2-methyl-2,4-pentanediol, 2,2,4-trimethyl-1,3-pentanediol, 2-ethyl-1,3-pentanediol, and 2,5-dimethyl-2,5-hexanediol). The low molecular weight organic carboxylic acids are 2-10C acids, preferably at least one of acetic acid, glycolic acid, glycine, propionic acid, lactic acid, oxalic acid, malonic acid, malic acid or tartaric acid. The organic compound containing surface active cations in their formula for n-type silicon texture includes at least one of tetramethyl ammonium hydroxide (TMAH), and choline. The ethylene glycol derivative includes an ethylene glycol ether derivative and diethylene glycol. The propylene glycol derivative includes a propylene glycol ester derivative. The nonionic surfactants include alkyl benzene polyoxyethylene with 5-13 ethylene oxide units. The anionic surfactant includes sulfonic acid. Preferred Method: The substrate comprises a wafer and the wafer is textured for a time sufficient to remove saw damage and to produce pyramids. The texture solution is applied to the c-Si substrate for less than or equal to 30 minutes. The method further involves: maintaining a temperature of the texture solution of 80-90 degrees C during the texturing of the c-Si substrate. The method further involves: pre-cleaning the c-Si substrate with a pre-cleaning solution to remove organic contaminants before texturing the c-Si substrate with solution (F2); applying a dilute acid rinse to the c-Si substrate after applying the solution (F2) to neutralize the solution (F2); and applying a water rinse to the c-Si substrate after texturing the c-Si substrate. EXAMPLE - No suitable example is given.