NOVELTY - A silicon sheet is cleaned and subjected to phosphoryl chloride diffusion. The silicon sheet is immersed in 5% hydrofluoric acid solution, to remove oxide film. A mask plate is prepared, fixed in a graphite framework and plasma-enhanced chemical vapor deposition (PECVD) plating is carried out. N-type layer is removed from silicon sheet. The surface of silicon sheet is further cleaned using low-concentration ammonia aqueous solution, corroded in presence of mask, bleached, plated, printed and sintered to form selective emitter solar battery.    USE - Manufacture of selective emitter solar battery.    ADVANTAGE - The method economically provides selective emitter solar battery in high yield, by a simple process.    DETAILED DESCRIPTION - A silicon sheet is cleaned and subjected to phosphoryl chloride diffusion by controlling gas ratio and temperature. The silicon sheet is then immersed in 5% hydrofluoric acid solution, to remove oxide film. A mask plate matching with emitter screen plate is prepared and fixed in a graphite framework of plasma-enhanced chemical vapor deposition (PECVD) machine, and PECVD plating is carried out to form silicon nitride film. The obtained emitter mask is immersed in mixed solution of hydrofluoric acid, nitric acid and sulfuric acid, and N-type layer is removed from the edge and periphery of silicon sheet. The surface of silicon sheet is further cleaned by low-concentration ammonia aqueous solution or mixed liquid of ammonia aqueous solution and hydrogen peroxide, corroded in presence of mask, bleached using 5% hydrofluoric acid to remove residual mask, plated by PECVD method, printed, sintered and tested to form selective emitter solar battery. An INDEPENDENT CLAIM is included for selective emitter solar battery.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of selective emitter solar battery.    Thin gate line (1)    Heavily doped transverse component (2)    Heavily doped zone (3)    Lightly doped zone (4)