NOVELTY - The method (200) involves transporting (210) a substrate through a deposition chamber having a vacuum environment and deposition modules. A buffer layer is deposited (220) onto the substrate during the transport of the substrate through the primary deposition module. A window layer is deposited (230) onto the buffer layer during the transport of the substrate through the secondary deposition module. A transparent conductive layer is deposited (240) onto the window layer during the transport of the substrate through the tertiary deposition module.    USE - Incline chemical vapor deposition (CVD) method of fabricating device e.g. copper indium gallium diselenide solar cell.    ADVANTAGE - The generated buffer layer, window layer and transparent conductive layer are performed efficiently in a vacuum environment of a single deposition chamber. The deposition of the buffer layer in incline CVD system can be eliminated. The efficiency of the reaction processes and epitaxial growth at the surface of incline CVD system can be improved efficiently. The temperature of the precursor gases and energy for reaction can be increased. The high speed processing of web substrates in roll-to-roll deposition systems can be ensured without redundant equipment. The quality of the deposited films in incline CVD system can be improved. The cost of the process equipment in incline CVD system can be reduced. The reaction of the precursor gases in regions of the deposition chamber can be prevented and unwanted deposits and contamination can be avoided. The nonuniformity in the deposited layer of incline CVD system can be minimized. The pumping of incline CVD system is uniform along the length of the slots and improved laminar flow of incline CVD system can be achieved. The operation time of fabricating device can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for incline CVD system.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the incline CVD process of fabricating device.    Step for processing incline CVD of fabricating device (200)    Step for transporting a substrate through deposition chamber (210)    Step for depositing buffer layer onto substrate (220)    Step for depositing window layer onto buffer layer (230)    Step for depositing transparent conductive layer onto window layer (240)