TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The composition applied on the substrate is dried. The step of applying the anhydrous composition on the substrate is carried out by printing, spraying, spin coating, dipping, meniscus coating, slit coating, slot-die coating or curtain coating, preferably by inkjet printing including continuous, thermal and piezo-inkjet printing. The step of irradiating the anhydrous composition is carried out with electromagnetic radiation having a wavelength of 150-300 nm. The thermal conversion is carried out at a temperature of greater than 150 degrees C. In the method, before, during or after the thermal treatment, UV-, infrared- or visual-radiation is irradiated. Preferred Composition: The anhydrous composition, in addition to indium-halogen-alkoxide, comprises other precursors, preferably alkoxide and halogen alkoxide of other elements, preferably alkoxide and halogen alkoxide of boron, aluminum, gallium, germanium, tin, lead, phosphorus, zinc and antimony in dissolved or dispersed form. The composition comprises: 0.1-10 wt.% of indium-halogen-alkoxide, relative to the total weight of the composition; and 90-99.9 wt.% of the solvent or dispersion medium. The composition exhibits a viscosity of 1 mPa.s to 10 Pa.s. Preferred Components: The substrate includes glass, silicon, silicon dioxide, metal- or transition metal-oxide, metal or polymeric material.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent or dispersion medium is an aprotic or weakly protic solvent and/or dispersion medium, where the solvent or dispersion medium is methanol, ethanol, isopropanol, tetrahydrofurfuryl alcohol, tert-butanol, butyl acetate, methoxyethanol or toluene. SPECIFIC COMPOUNDS - The use of 5 compounds (I) is specifically claimed i.e. dimethoxy-ethoxy indium chloride of formula (InCl(OCH2CH2OCH3)2) (Ia), dimethoxy indium chloride, diethoxy indium chloride, diisopropoxy indium chloride and di-tert-butoxy indium chloride.    EXAMPLE - A solution (2.5 wt.%) of dimethoxy indium chloride (100 mu l) in ethanol was applied on a doped silicon substrate having a length of 15 mm and 200 nm thick silica coating, where the step of applying was carried out by spin coating at 2000 revolutions per minute for 5 seconds. The coated substrate was irradiated, for 5 minutes, with UV radiation (from mercury lamp) having a wavelength of 150-300 nm. Subsequently, the substrate was heated on a hot plate at 350 degrees C to obtain indium oxide-containing layer.