NOVELTY - A lead-free and cadmium-free sealing glass composition, comprises: a first glass fit, comprising, prior to firing, (a) 25-65 mol% bismuth oxide (Bi2O3), (b) 3-60 mol% zinc oxide (ZnO), and (c) 4-65 mol% boron oxide (B2O3).    USE - The lead-free and cadmium-free sealing glass composition and methods are useful for bonding first and second glass panels to one another; for bonding a cap wafer to a device wafer so as to hermetically seal and isolate a MEMS device in a cavity defined between it; and for sealing a solar cell module in a glass cylinder (claimed).    ADVANTAGE - The lead-free and cadmium-free sealing glass composition is highly improved, safe, and has good flow characteristics with low or tunable crystallization tendencies.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are:    (1) a method of bonding first and second glass panels to one another, so as to hermetically seal and isolate a cavity defined between it, comprising; (a) providing a first homogeneous powder glass sealing composition comprising: (i) 25-65 mol% Bi2O3, (ii) 3-60 mol% ZnO, (iii) 4-65 mol% B2O3, (iv) no intentionally added oxides of silicon, and (v) no intentionally added oxides of aluminum; (b) providing a second homogeneous powder glass sealing composition comprising: (i) 25-65 mol% Bi2O3, (ii) 3-60 mol% ZnO, (iii) 4-65 mol% B2O3, (iv) 0.1-25 mol% of at least one selected from copper oxide (CuO), iron oxide (Fe2O3), cobalt oxide (Co2O3), manganese oxide (MnO), nickel oxide (NiO), chromium oxide (Cr2O3); (c) mixing the first and second powders form a homogeneous mixture; (d) applying the homogeneous mixture to at least one of the first and second glass plates; (e) positioning the first and second glass plates such that the first and second powders come into contact with both glass plates; and (f) firing at a temperature of 350-550 degrees C to sinter and flow the first and second powders thus forming a hermetic seal defining a cavity between the first and second plates;    (2) a method of bonding a cap wafer to a device wafer so as to hermetically seal and isolate a microelectromechanical systems (MEMS) device in a cavity defined between it, comprising: (a) providing a unfired paste including the sealing glass composition; (b) depositing the unfired paste onto the cap wafer and/or the device wafer by screen printing; (c) positioning the cap wafer and device wafer in relation to each other such that the paste is positioned between it; and (d) heating the cap wafer and device wafer to a temperature above the melting point of the glass component to form a hermetic seal between the cap wafer and device wafer that isolates the MEMS device in the cavity defined between it;    (3) an apparatus including a MEMS device, where the MEMS device is hermetically sealed in a vessel defined by a cap wafer, a device wafer, and a hermetic glass seal, the hermetic glass seal comprising the sealing glass composition;    (4) a sealed assembly comprising at least two or more glass plates and a sufficient amount of a sintered sealing glass composition between it defining an interior cavity;    (5) an encapsulated solar cell assembly comprising at least two or more glass plates and a sufficient amount of a sintered sealing glass composition between it defining an interior cavity, the cavity containing a solar cell, the sealing glass comprising, prior to firing, (a) a first homogeneous powder glass sealing composition; and (b) a second homogeneous powder glass sealing composition;    (6) a multi-pane window comprising at least two or more glass plates and a sufficient amount of a sintered sealing glass composition between it defining an interior cavity, the cavity containing the solar cell;    (7) a process of sealing a solar cell module in a glass cylinder comprising: (a) positioning a set of solar cells in electrical contact with one another inside a glass cylinder; (b) applying the composition to at least one of the glass cylinder and a conductive metal endcap designed to fit over the end of the cylinder; (c) bringing the cylinder end, composition and endcap into physical contact with one another; (d) induction heating the composition to a temperature of 400-600 degrees C to provide a hermetic seal between the endcap and cylinder;    (8) a solar cell module comprising a glass cylinder having a transmittance of greater than 80% at 550 nm, in which are situated a set of silicon solar cells in electrical contact with one another and a conductive metal endcap, the endcap hermetically sealed to the cylinder by induction heating of a portion of the sealing glass composition;    (9) an electronic apparatus comprising: (a) a MEMS device, (b) at least one substrate comprising at least one of glass, metal, and silicon, and (c) the sealing glass;    (10) a MEMS device comprising at least two silicon wafer substrates hermetically sealed with a fired glass powder composition, the powder comprising, prior to firing, (a) 32-55 mol% Bi2O3, (b) 10-45 mol% ZnO, (c) 10-50 mol% B2O3, (d) 1.5-9 mol% of at least one selected from CuO, Fe2O3, Co2O3, MnO, NiO, Cr2O3, and combinations, (e) 0.1-20 mol% alkali metal oxides, (f) no intentionally added oxides of silicon, and (g) no intentionally added oxides of aluminum;    (11) a solar cell array or module hermetically sealed within a glass vessel, the glass vessel bonded to at least one cap or cover, the bonding effectuated by a sintered glass composition, the sintered glass composition;    (12) a solar cell comprising a contact, the contact comprising a fired paste, the paste comprising prior to firing, the lead-free and cadmium-free glass composition; and    (13) an encapsulated solar cell assembly comprising at least one glass plate and at least one metal plate and a sufficient amount of a sintered sealing glass composition between it defining an interior cavity, the cavity containing a solar cell, the sealing glass.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a stylized MEMS device.    P-type silicon substrate (10)    N-type diffusion layer (20)    Passivation layer/ anti-reflective coating, which can be one of a silicon nitride film, titanium oxide film, or silicon oxide film (30)    P layer/back surface field (40)    Aluminum paste formed on backside (60)