NOVELTY - A coating liquid containing organometallic compound is formed on substrate, to form coating film. The obtained coating film is dried and heated to obtain inorganic film. The coating film is heated under oxygen-containing atmosphere less than dew-point-temperature of -10 degrees C, to more than the temperature to which mineralization of the organometallic compound component occurs. The metal-oxide-fine-particles layer in which the metal oxide fine particles containing metal oxide as a main component filled, is formed.    USE - Manufacture of metal oxide film for element for thin-film transistor for device e.g. light-emitting device, electric power generation device, display device and input device (all claimed). Uses include but are not limited to liquid crystal display element, field emission lamp, solar cell, liquid crystal display, electroluminescent display, plasma display, electronic paper element, electrochromic element.    ADVANTAGE - The method provides coating film excellent transparency, electroconductivity and strength.    DETAILED DESCRIPTION - A coating film is formed on a substrate using a metal oxide film-forming coating liquid containing organometallic compounds. The obtained coating film is dried and heated to obtain inorganic film. The coating film is heated under oxygen-containing atmosphere less than dew-point-temperature of -10 degrees C, to more than the temperature to which mineralization of the organometallic compound component occurs, and then thermal decomposition and/or combustion processes are performed to remove the organic component contained in the dry coating film. The metal-oxide-fine-particles layer in which the metal oxide fine particles containing metal oxide as a main component filled, is formed. The organometallic compound contains organoaluminum compound, organosilicon compound, organoscandium compound, organotitanium compound, organovanadium compound, organochrome compound, organomanganese compound, organoiron compound, organocobalt compound, organonickel compound, organocopper compound, organogallium compound, organogermanium compound, organo yttrium compound, organozirconium compound, organo niobium compound, organomolybdenum compound, organo ruthenium compound, organoantimony compound, organolanthanum compound, organohafnium compound, organotantalum compound, organotungsten compound, organobismuth compound, organo cerium compound, organoneodymium compound, organosamarium compound, organogadolinium compound, organomagnesium compound, organocalcium compound, organostrontium compound and/or organobarium compound. The metal oxide is aluminum oxide, a silicon oxide, scandium oxide, titanium oxide, vanadium oxide, chromium oxide, manganese oxide, iron oxide, cobalt oxide, nickel oxide, copper oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, niobium oxide, molybdenum oxide, ruthenium oxide, antimony oxide, lanthanum trioxide, hafnium oxide, tantalum oxide, tungsten oxide, bismuth oxide, cerium oxide, neodymium oxide, samarium oxide, gadolinium oxide, magnesium oxide, calcium oxide, strontium oxide and/or barium oxide. INDEPENDENT CLAIMS are included for the following:    (1) element, which has metal-oxide-fine-particles layer as metal oxide film;    (2) substrate with metal oxide film; and    (3) device.