NOVELTY - Method of using a volatile metal compound to form a metal-containing layer on at least a substrate within a reaction zone under the use of an agent for the formation or storage of and for supplying at least two process gases and agent for tempering the substrate, is claimed, where as process gas precursor, both a volatile metal compound with an ability to incorporate additional ligands and a compound as ligand, are used and the process gas precursors are separately supplied as metal containing- and ligand forming process gas to the reaction zone.    USE - The method is useful for forming a metal-containing layer on at least a substrate within a reaction zone (claimed), where the metal-containing layer is a copper- and silver-containing layer. The metal-containing layer is useful for the manufacture of semiconductors, solar cells and optical components.    ADVANTAGE - The method: is economically and environmentally favorable; uses stable, oxygen- or carbon-bound metal compounds; forms metal-containing layer on a substrate without using plasma enhancement or air-sensitive metal compounds; is realizable without using fluorine- or phosphorus-containing compounds; and enables a deposition of pure metal layers on substrate.    DETAILED DESCRIPTION - Method of using a volatile metal compound to form a metal-containing layer on at least a substrate within a reaction zone under the use of an agent for the formation or storage of and for supplying at least two process gases and agent for tempering the substrate, is claimed, where: as process gas precursor, both a volatile metal compound with an ability to incorporate additional ligands and a compound as ligand, are used and the process gas precursor is separately supplied as metal containing- and ligand forming process gas to the reaction zone; the process gas precursors are so adapted to one another, such that the precursors form a complex in the reaction, and the complex can be decomposed at below the decomposition temperature of the metal compound; and the substrate temperature is so adjusted that it lies at below the decomposition temperature of the metal compound and above or equal to the decomposition temperature of the metal complex formed from the process gases.