TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The forming of the back surface field layer includes removing at least a portion of the second conductive type impurity doping layer formed at the rear surface part of the silicon substrate. The forming of the front and rear electrodes comprises coating a front electrode paste and a rear electrode paste, and annealing the front electrode paste and rear electrode paste at 600-750 degrees C at the same time. The method further comprises texturing the silicon substrate to form an unevenness on a front surface, or on front and rear surfaces of the silicon substrate. In the method, when the unevenness is formed on the front and the rear surfaces, the forming of the back surface field layer includes reducing or removing the unevenness formed on the rear surface of the silicon substrate. The removing of the portion of the second conductive type impurity doping layer comprises removing the second conductive type impurity doping layer and a portion of the silicon substrate at the rear surface part of the first conductive type silicon substrate. The forming of the emitter layer: includes forming a first region where the second conductive type impurity has a first concentration and a second region where the second conductive type impurity has a concentration higher than the first concentration; and further includes forming a mask layer on a front surface of the silicon substrate and forming a predetermined opening part in the mask layer, forming the second region through the predetermined opening part, and forming the first region after removing the mask layer. The forming of the mask layer deposits a silicon oxide layer on the silicon substrate. The forming of the predetermined opening part in the mask layer includes coating an etching paste on a predetermined region of the mask layer and etching the etching paste. The forming of the second region and the first region comprises thermally diffusing different impurity doping concentrations of the second conductive type impurity at 800-950 degrees C for 20-100 minutes. The forming of the second region includes thermally diffusing the second conductive type impurity at a higher temperature and for a longer time than when forming the first region. Preferred Components: The concentration of the second conductive type impurity in the back surface field layer is lower than the concentration of the second conductive type impurity in the emitter layer, where the concentration of the second conductive type impurity in the back surface field layer is approximately zero. The first region has a shallower doped depth of the second conductive type impurity than that of the second region. The front electrode contacts the second region of the emitter layer. The roughness of an unevenness formed on the rear surface of the substrate is different from the roughness of unevenness formed on a front surface of the substrate. The second conductive type impurity includes at least one of phosphorus, arsenic or antimony. EXAMPLE - No suitable example given.