NOVELTY - Method (M1) for growing a crystal from a liquid (14) in a crucible (12), involves: heating the crucible with at least one heating element (20); and extracting heat from the crucible using a heat exchanger (18) in thermal contact with the crucible, where the crucible is supported from below by a support structure (16) and the heat exchanger includes insulation (22, 24) that is movable away from the support structure.    USE - For growing crystal from liquid in crucible; where the crystal is multicrystalline ingot, single crystal boule, or silicon (claimed). The single crystal silicon is useful for semiconductor devices for microelectronics industry. The multicrystalline silicon is useful for photovoltaic applications e.g. solar cells.    ADVANTAGE - The method provides improved method for growing crystal from liquid in crucible compared to prior art methods involving moving of crucible which can be difficult at high temperature and with heavy crucible, and can cause vibrations and perturbations at the solid/liquid interface. In the method support structure and crucible are not moved during the crystal growing process, whereas insulation is moved during crystal growing process. In the method to reduce heat input to bottom of crucible and to control heat extraction independently of heat input, insulation of heat exchanger such as shield is raised between heating element and crucible at controlled speed as the crystal grows, without moving crucible. A temperature gradient is produced by shielding only portion of a heating element e.g. bottom portion of cylindrical element can be shielded to cause heat transfer from heating element to be less to bottom of crucible than at the top, to promote controlled solidification of charge in controlled manner (directional solidification) by moving heat shields upward at controlled rat, which causes stabilizing of temperature gradient in crucible. The heat extraction can be controlled independently of heat input by lowering insulation and by using heat exchanger. These approaches include independent control of temperature gradients in the liquid and solid during crystal growth without moving heat zone, crystal, or crucible. While the method primarily includes heat exchanger method (HEM), it is applicable to other techniques in which growth occurs from bottom to top of a melt, such as Vertical Bridgman, Modified Bridgman, Thermal Gradient Freeze (TGF), and Thermal Gradient Technique (TGT). The solid-liquid interface is submerged and hence any mechanical or thermal perturbations are damped out by surrounding liquid before reaching the solid-liquid interface. It is not necessary to rotate crucible to minimize effects of hot/cold spots in heat zone. After crystal growth, crystal is still in heat zone so furnace temperature can be reduced below melting point of material and temperature gradient imposed by helium flow through heat exchanger can be reduced by decreasing heat flow. Under these conditions, the crystal can be in situ annealed to relieve solidification stresses and reduce defect density prior to controlled cool-down of the crystal. The heat extraction at bottom of crucible can be increased by decreasing either heat exchanger temperature or by lowering insulation under crucible before, after, or while shielding is raised. The rate of movement of heat shields can be independently controlled to control both heat input and heat extraction from bottom of crucible to achieve most favorable crystal growth condition. Under these conditions, a convex interface can be maintained. Therefore, temperature gradients in liquid and solid are reduced and higher quality crystals can be produced at faster growth rate. An additional advantage is that larger diameter and taller ingots/boules can be grown without introducing additional stress and causing spurious nucleation. With the method it is possible to produce large multicrystalline silicon ingots with centimeter-size grains, with vertical orientation of grain boundaries, and no impinging interfaces; which results in producing high-efficiency solar cells comparable to those produced using single crystal silicon. The method can result in producing ingots of up to 69-300 cm square cross-section at low cost. Thus system can be used to produce ingots or boules of greater than or equal to 300 kg.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a system for growing a crystal from a liquid in a crucible comprising: a support structure to support the crucible from below; at least one heating element to provide heat to the crucible; and a heat exchanger to extract heat from the support structure, where the heat exchanger includes insulation that is movable away from the support structure.    DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional view of furnace to produce single crystal boules.    Furnace (10)    Crucible (12)    Molten liquid (14)    Support block (16)    Heat exchanger (18)    Heating elements (20)    Movable insulation pack (22)    Movable heat shield (24)    Furnace insulation (26)