NOVELTY - Apparatus for producing multicrystalline silicon ingots by induction method comprises an enclosure (1) comprising means for startup heating of silicon (3), a cooled crucible (4) enveloped by an inductor (5) and having a movable bottom (7) and four walls consisting of sections spaced apart by vertically extending slots, means for moving the movable bottom (11), and a controlled cooling compartment (6) arranged under the cooled crucible.    USE - The apparatus is useful for producing multicrystalline silicon ingots by induction method (claimed); and for manufacturing solar cells from multicrystalline silicon.    ADVANTAGE - The improved apparatus makes it possible to decrease silicon melt spills and to increase the quality of multicrystalline silicon.    DETAILED DESCRIPTION - Apparatus for producing multicrystalline silicon ingots by induction method comprises an enclosure (1) comprising means for startup heating of silicon (3), a cooled crucible (4) enveloped by an inductor (5) and having a movable bottom (7) and four walls consisting of sections spaced apart by vertically extending slots, means for moving the movable bottom (11), and a controlled cooling compartment (6) arranged under the cooled crucible, where the inside face defines a melting chamber (16) of a rectangular or square cross-section and the walls of the cooled crucible extend outwards at least from the inductor toward the lowest portion of the cooled crucible to expand the melting chamber, characterized in that each wall of the cooled crucible has a central section providing the absence of a vertically extending slot at the middle of a side of the melting chamber, and the angle beta of expanding the melting chamber is defined by beta =arctg (2x(k - 1.35x10-3 x b)/d).    d=dimension of the smaller side of the rectangle or of the side of the square of the cross-section of the melting chamber at the inducer level;    b=dimension of the adjoining side of the cross-section of the melting chamber at the inducer level; and    k=an empirical coefficient, which is 1.5 to 2.    DESCRIPTION OF DRAWING(S) - The drawing shows a longitudinal sectional view of apparatus for multicrystalline silicon ingots by induction melting.    Enclosure (1)    Charging hopper (2)    Means for start-up heating of silicon (3)    Cooled crucible (4)    Inductor (5)    Controlled cooling compartment (6)    Movable bottom (7)    Means for moving movable bottom (11)    Melting chamber (16)    Silicon lump material (17)