NOVELTY - The solar cell has n-type doped region (131) and p-type doped region (132) that are formed at back surface of semiconductor substrate (100). A back passivation layer (140) is formed on substrate, in which contact holes are formed for exposing portion of doped regions. The light receiving surface of substrate is textured to form textured surface (101) opposite to formation surface of doped regions. The surface of substrate at formation region of mark is provided with etched surface that is different from textured surface in structure and property.    USE - Solar cell.    ADVANTAGE - The absorptance of light is increased by forming the textured surface so that the efficiency of the solar cell is improved.    DETAILED DESCRIPTION - The electron electrode (151) and hole electrode (152) are formed on exposed doped regions. An alignment mark (160) is formed at rear surface of substrate. The textured surface is provided with anisotropically etched surface and the surface of the substrate at formation region of mark is provided with non-uniformly or isotropically etched surface. The front surface field region is positioned on the textured surface. An anti-reflection layer (120) is positioned on the front surface field region. An INDEPENDENT CLAIM is included for method for manufacturing solar cell, which involves forming an insulating layer on the n-type doped layer. A mask defining a p-type doped region formation area and alignment mark formation area on insulating layer is formed. The insulating layer is selectively removed using the mask. The n-type doped layer in alignment mark formation area is removed and surface of substrate in alignment mark formation area is non-uniformly or isotropically etched. The p-type impurities are doped into substrate in the p-type doped region formation area.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the solar cell.    Semiconductor substrate (100)    Textured surface (101)    Anti-reflection layer (120)    N-type doped region (131)    P-type doped region (132)    Back passivation layer (140)    Electron electrode (151)    Hole electrode (152)    Alignment mark (160)