NOVELTY - Method for making material (I) comprises (a) providing one or more silver indium gallium selenide (AIGS), silver indium sulfide (AIS), or silver gallium sulfide (AGS) polymeric precursor compounds or inks, (b) providing a substrate (10), (c) depositing the compounds or inks onto the substrate and (d) heating the substrate at 20-650 degrees C in an inert atmosphere to produce the material.    USE - The method is useful: for preparing (I), which is useful as a semiconductor and photovoltaic material and a thin film with a thickness of 0.001-100 micrometers, preferably 0.1-10 micrometers; for the preparation of a photovoltaic device for a system for providing electrical power (all claimed). (I) is useful to make semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells.    ADVANTAGE - The method provides (I), which: is stable; allows a control of the stoichiometry, structure and ratios of atoms in the semiconductors, preferably metal atoms; prepares chemically and physically uniform semiconductor layers; makes solar cells and other products at relatively low temperatures; exhibits enhanced processability to form a thin film for making solar cell; provides enhanced control of the uniformity and properties of a semiconductor material; enhanced solubility in organic solvents; and makes photovoltaic layers, semiconductors, and devices regardless of the morphology, architecture, or manner of fabrication of the semiconductors or devices.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) (I) obtained by the method; and    (2) a method for providing electrical power comprising using the system to convert light into electrical energy.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of a solar cell.    Substrate (10)    Electrode layer (20)    Absorber layer (30)    Window layer (40)    Transparent conductive layer. (50)