NOVELTY - Forming a gallium arsenide material on a wafer (112), comprises (a) heating a wafer to a deposition temperature of greater than or equal to 550 degrees C within a processing system, (b) exposing the wafer to a deposition gas comprising a gallium precursor gas and arsine, and (c) depositing a gallium arsenide layer on the wafer at a deposition rate of greater than or equal to 30 mu m/hour.    USE - The method is useful for forming group III/V materials and gallium arsenide material on wafer (all claimed), which is used in solar, semiconductor and other electronic device applications.    ADVANTAGE - The method has improved epitaxial growth rate.    DETAILED DESCRIPTION - Forming a gallium arsenide material on a wafer (112), comprises either: (a) heating a wafer to a deposition temperature of greater than or equal to 550 degrees C within a processing system, (b) exposing the wafer to a deposition gas comprising a gallium precursor gas and arsine, and (c) depositing a gallium arsenide layer on the wafer at a deposition rate of greater than or equal to 30 mu m/hour; or (a1) heating a wafer to a deposition temperature of greater than or equal to 650 degrees C within a processing system, (b1) exposing the wafer to a deposition gas comprising gallium precursor gas, aluminum precursor gas and arsine, and (c1) depositing a gallium arsenide layer on the wafer at a deposition rate of greater than or equal to 30 mu m/hour, where the gallium arsenide layer comprises aluminum gallium arsenide. INDEPENDENT CLAIMS are also included for forming a group III/V material on a wafer, comprising: (A) heating a wafer to a deposition temperature of greater than or equal to 600 degrees C within a processing system, (B) exposing the wafer to a deposition gas including gallium precursor gas, indium precursor gas and arsine, and (C) depositing group III/V layer on the wafer at a deposition rate of greater than or equal to 30 mu m/hour, where the group III/V layer comprises gallium, arsenic or indium; or (A1) heating a wafer to a deposition temperature of greater than or equal to 600 degrees C within a processing system, (B1) exposing the wafer to a deposition gas including gallium precursor gas, indium precursor gas, aluminum precursor gas and phosphorus precursor gas, and (C1) depositing group III/V layer on the wafer at a deposition rate of greater than or equal to 30 mu m/hour, where the group III/V layer comprises gallium, indium, aluminum and phosphorus.    DESCRIPTION OF DRAWING(S) - The figure shows a gallium arsenide stack containing a variety of group III/V layers.    Gallium arsenide stack (100)    Gallium arsenide cell (110)    Wafer (112)    Buffer layer (114)    Sacrificial layer (116)