NOVELTY - Manufacturing a semiconductor device (1) including a flat semiconductor substrate (2), involves: applying a dopant source by selectively ink jetting a first pattern of a phosphoric acid or boric acid solution on a main surface (2a) of the semiconductor substrate; heating the substrate so as to diffuse phosphorus or boron atoms from the dopant source into the substrate, by forming first diffusion regions (4) immediately beneath the first pattern; and forming a metal contact pattern in alignment with the first diffusion regions.    USE - For manufacturing a semiconductor device, particularly a photovoltaic cell or solar cell (claimed).    ADVANTAGE - The method is a more economical for manufacturing a photovoltaic cell having a selective emitter in a single high-temperature diffusion step; and employs common and inexpensive acid solutions for creating the selective emitter. The use of phosphoric or boric acid in combination with the method of ink jetting source material to a substrate enables the highly economical and reasonably accurate formation of a selective emitter in a solar cell.    DETAILED DESCRIPTION - Manufacturing a semiconductor device (1) including a flat semiconductor substrate (2), involves: either applying a dopant source by selectively ink jetting a first pattern of a phosphoric acid or boric acid solution on a main surface (2a) of the semiconductor substrate, heating the substrate so as to diffuse phosphorus or boron atoms from the dopant source into the substrate, by forming first diffusion regions (4) immediately beneath the first pattern, and forming a metal contact pattern in alignment with the first diffusion regions; or applying a dopant source by selectively ink jetting a first pattern and a second pattern of a same dopant source solution onto a main surface of the semiconductor substrate, where the second pattern have a lower dopant source concentration per unit of substrate area than the first pattern; heating the substrate so as to diffuse dopant atoms from the dopant source into the substrate, by forming first diffusion regions immediately beneath the first pattern and second diffusion regions (6) immediately beneath the second pattern; and forming a metal contact pattern in alignment with the first diffusion regions.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional side view of the photovoltaic cell.    Semiconductor device (1)    Semiconductor substrate (2)    Main surface (2a)    Back side (2b)    Emitter (3)    First diffusion regions (4)    Second diffusion regions (6)    Anti-reflection coating (8)    Ohmic contacts (13)    Back side metallization pattern (14)