NOVELTY - The method comprises depositing (602) an ink on a front substrate surface of a substrate in an ink pattern, heating (604) the substrate in a baking ambient at 400 degrees C for 1 minute to create a densified film ink pattern, cleaning the substrate, exposing (606) the substrate to a dopant source in a diffusion furnace with a deposition ambient comprising phosphoric acid and phosphorus oxychloride gas at 800 degrees C for 20 minutes, and heating (608) the substrate in a drive-in ambient at 875 degrees C for 25 minutes. The substrate is doped with boron atoms.    USE - The method is useful for forming a multi-doped junction a solar cell on a substrate.    ADVANTAGE - The method is capable of economically and efficiently forming the multi-doped junction solar cell on a substrate with high solar conversion efficiency, less number of manufacturing steps, improved performance and reduced reflectivity and without any contamination of the wafer bulk.    DETAILED DESCRIPTION - The method comprises depositing (602) an ink on a front substrate surface of a substrate in an ink pattern, heating (604) the substrate in a baking ambient at 400 degrees C for 1 minute to create a densified film ink pattern, cleaning the substrate, exposing (606) the substrate to a dopant source in a diffusion furnace with a deposition ambient comprising phosphoric acid and phosphorus oxychloride gas at 800 degrees C for 20 minutes, and heating (608) the substrate in a drive-in ambient at 875 degrees C for 25 minutes. The substrate is doped with boron atoms. The ink comprises a set of silicon-containing particles and a set of solvents. A phosphosilicate glass layer is formed on the front substrate surface and on the densified film ink pattern. A first diffused region with a first sheet resistance (30-50 Ohm/sq) is formed under the front substrate surface covered by the densified film ink pattern. A second diffused region with a second sheet resistance (90-110 Ohm/sq) is formed under the front substrate surface not covered with the densified film ink pattern. The first sheet resistance is smaller than the second sheet resistance. A ratio of the carrier nitrogen gas to the reactive oxygen gas is 1:1-1.5:1. The baking ambient and the drive-in ambient are an inert ambient and/or an oxidizing ambient.    DESCRIPTION OF DRAWING(S) - The diagram shows a flow chart of a method of forming a multi-doped junction solar cell on a substrate.    Depositing an ink on a front substrate surface of a substrate (602)    Heating the substrate in a baking ambient (604)    Exposing the substrate to a dopant source (606)    Heating the substrate in a drive-in ambient. (608)