NOVELTY - An oxide sintered component contains zinc, titanium and oxygen. The atomic ratio of titanium and total amount of zinc and titanium is 0.02-0.1.    USE - Oxide sintered component is used for forming zinc oxide-type transparent conductive film for forming pattern, and transparent conductive substrate (all claimed). Uses include but are not limited to solar cell, liquid crystal display device, organic electroluminescent device, inorganic electroluminescent device, touch panel, motor-vehicle window, heat-ray reflective film for construction, antistatic film, and frozen showcase.    ADVANTAGE - The zinc oxide-type transparent conductive film formed using the oxide sintered component has excellent heat resistance, moisture resistance, alkali resistance, acid resistance and surface resistance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of oxide sintered component, which involves molding raw material powder containing mixed powder of titanium oxide powder and zinc oxide powder or mixed powder of titanium oxide powder and zinc hydroxide powder, and zinc titanate powder and sintering obtained molded product (a) at 600-1500 degrees C under inert gas atmosphere and vacuum, reducing atmosphere or inert gas atmosphere;    (2) oxide mixture, which contains zinc oxide and titanium oxide;    (3) manufacture of oxide mixture, which involves molding raw material powder containing mixed powder of titanium oxide powder and zinc oxide powder or mixed powder of titanium oxide powder and zinc hydroxide powder and annealing obtained molded product at 50-600 degrees C under oxidizing atmosphere, inert atmosphere, vacuum or reducing atmosphere;    (4) target, which is obtained by processing oxide sintered component or oxide mixture;    (5) formation of zinc oxide-type transparent conductive film;    (6) transparent conductive substrate, which has zinc oxide-type transparent conductive film on transparent base material;    (7) zinc oxide-type transparent conductive forming material, which contains zinc oxide, titanium oxide and oxide of gallium or aluminum. The ratio of number of atoms of gallium or aluminum is 0.5-6 atomic% with respect to total number of metal atoms including oxide of gallium or aluminum and titanium oxide; and    (8) patterning method, which involves etching the zinc oxide-type thin film with acid and patterning.