TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The donor element is at least one selected from phosphorus (P) and antimony (Sb). The donor element-containing glass powder contains at least one donor element-containing material selected from phosphorus oxide (P2O3), phosphorus pentoxide (P2O5) and antimony trioxide (Sb2O3); and at least one glass component material selected from silicon dioxide (SiO2), potassium oxide (K2O), sodium oxide (Na2O), lithium oxide (Li2O), barium oxide (BaO), strontium oxide (SrO), calcium oxide (CaO), magnesium oxide (MgO), beryllium oxide (BeO), zinc oxide (ZnO), lead oxide (PbO), cadmium oxide (CdO), vanadium pentoxide (V2O5), tin oxide (SnO), zirconium dioxide (ZrO2) and molybdenum oxide (MoO3). The composition further comprises a metallic element that crystallizes through reaction with the glass powder, where the metallic element that crystallizes through reaction with the glass powder is at least one selected from silver (Ag), silicon (Si), copper (Cu), iron (Fe), zinc (Zn) and manganese (Mn). It exhibits paste state. The dispersion medium comprises a binder and a solvent. Preferred Method: Producing photovoltaic cell comprises applying the composition on the textured surface of a silicon substrate, followed by optional drying. The silicon substate having a textured surface structure is formed by removing the damaged surface layer from a silicon substrate sliced from an ingot and etching the thus obtained silicon substrate to form a textured surface structure. The method further comprises subsequent to applying the composition on the textured surface and optional drying the following steps: (a) thermal diffusion treatment, preferably at a temperature of 600 to 1200 degrees C, to form a glass layer and an n-type diffusion layer beneath the glass layer; (b) removing the glass layer by etching; (c) forming a p+-type diffusion layer on the rear surface of the substrate; (d) forming an antireflective film over the n-type diffusion layer; (e) forming surface electrode on the antireflective film; (f) forming rear surface electrode on the p+-type diffusion layer; and (g) sintering to establish electrical connection between the surface electrode and the silicon substrate.