NOVELTY - Manufacturing thin film photovoltaic module, comprises: transferring a substrate (1310) into a first chamber; forming an electrode layer (1320); transferring the substrate to second chamber; forming a copper (Cu)-bearing material layer; transferring the substrate to a third chamber; forming an indium (In) layer thus forming a Cu-In composite film; transferring the substrate comprising the Cu-In composite; subjecting the Cu-In composite film to thermal treatment process; transforming the Cu-In composite film to a copper-indium-disulfide material (1360); and forming photovoltaic absorber layer.    USE - The method is useful for manufacturing thin film photovoltaic module including feed forward control.    ADVANTAGE - The method provides large scale manufacture of multi junction and single junction solar module using integrated manufacturing system and thin and thick film photovoltaic materials.    DETAILED DESCRIPTION - Manufacturing a thin film photovoltaic module, comprises: transferring a substrate (1310) into a first chamber of a multichamber system, the substrate being optically transparent and having a lateral dimension of 1.5 meters or greater; forming an electrode layer (1320) overlying the substrate in the first chamber; transferring the substrate to a second chamber of the multichamber system; forming a copper (Cu)-bearing material layer overlying the electrode layer in the second chamber; transferring the substrate to a third chamber of the multichamber system; forming an indium (In) layer overlying the copper-bearing material layer in the third chamber thus forming a Cu-In composite film; transferring the substrate comprising the Cu-In composite film to a fourth chamber of the multi-chamber system; subjecting the Cu-In composite film to a thermal treatment process in the fourth chamber in an environment including sulfur-bearing species; transforming the Cu-In composite film to a copper-indium-disulfide material (1360); and forming a photovoltaic absorber layer for a thin film photovoltaic module using the copper-indium-disulfide material. An INDEPENDENT CLAIM is also included for a method of forming copper-indium-sulfide layer, comprising transferring a substrate into a first process chamber of a multi-chamber system, forming a conductive layer (1530) over a surface of the substrate in the first chamber, forming a copper layer over the conductive layer in a second chamber of the multi-chamber system, forming an indium layer over the copper layer in a third chamber of the multi-chamber system thus forming a copper-indium composite layer, exposing the copper-indium composite layer to sulfur bearing species at a first temperature in a fourth chamber of the multi-chamber system and forming a copper-indium-sulfide (S) layer.    DESCRIPTION OF DRAWING(S) - The figure shows a simplified schematic diagram showing process of large scale manufacture of thin film photovoltaic modules using multiple chamber configuration.    Substrate (1310)    Electrode layer (1320)    Copper indium disulfide material (1360)    Window layer (1510)    Conductive layer (1530)