TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The process (I) further comprises: separating the silicon powder from a slurry, prior to contacting the silicon powder with the solvent metal; drying the silicon powder, after separating the silicon powder from the slurry; pre-treating the powder with acid treatment, vacuum melting, magnetic separation and/or drying, prior to contacting the silicon powder with the solvent metal; acid washing the silicon crystals, sufficient to remove impurities, after separating the first silicon crystals and the first mother liquid; and melting the silicon crystals after separating the first silicon crystals and the first mother liquid. The step of contacting the silicon powder with a solvent metal comprises feeding silicon powder into a molten bath. In the process (I), during the melting, the temperature is maintained above the solidus temperature of the first molten liquid. The second molten liquid is cooled to a temperature of less than the liquidus temperature of the second molten liquid. The second molten liquid is cooled to within 125 degrees C above the solidus temperature of the second molten liquid, where the second molten liquid is cooled at a rate of less than 75 degrees C/hour over a period of at least 2 hours. The second molten liquid is cooled to above the solidus temperature of the second molten liquid and below the liquidus temperature of the second molten liquid. The process (II) comprises contacting the first molten liquid with a salt flux after melting the silicon under submersion and before separating the dross and the second molten liquid, where contacting the first molten liquid with a salt flux comprises adding the salt flux to the surface of the first molten liquid. The process (II) further comprises washing the first silicon crystals with acid after separating the first silicon crystals and the first mother liquid. Preferred Components: The temperature of the first molten liquid is below the liquidus temperature of the first molten liquid and is above the solidus temperature of the first molten liquid. The first gas comprises at least one of chlorine, elemental chlorine, inert gas, oxygen, nitrogen, helium, argon, hydrogen, sulfur hexafluoride, phosgene, carbon tetrachloride, water vapor, carbon dioxide, carbon monoxide, tetrachlorosilane and tetrafluorosilane. EXAMPLE - Silicon powder was collected as a spent slurry from a manufacturing process by cutting ingots to make solar panel cells. Most silicon carbide and polyethylene glycol was removed from the slurry and the silicon powder was dried to remove water. The powder was optionally treated with acid to further remove impurities before drying. The silicon powder was fed into a molten bath of aluminum and submerged. The silicon was fed using a rotary degasser and quickly submerged. The powder was sheared into individual grains. The powder was kept submerged by melt turbulence. The temperature was held above the solidus temperature. Chlorine gas was injected into the mixture to remove silicon carbide, silicon dioxide, phosphorus and any other inclusions or precipitates formed. Dross was removed from the surface. The molten bath was then put through a fractional crystallization process to grow crystals in the bath. The temperature was raised above the liquidus temperature and then slowly lowered down to the close to the solidus temperature to grow primary silicon crystals in the bath, to remove silicon carbide, iron and other elements that prefer to be in the melt rather than in the solidifying primary silicon crystals. The process was run for at least 4 hours. The temperature of the bath was kept homogeneous to prevent crystals from growing preferentially in one part of the bath, where a top heater provided the additional heat to the surface to prevent crystal growth on the surface of the bath. The liquid was removed from the bath. The molten liquid was poured out of the bath, pumped or sucked out of the bath or released out of a hole in the bottom of the furnace. The silicon crystals form a network of primary silicon flakes that remain in the furnace as the liquid aluminum eutectic was poured out. The furnace was heated during pouring and was further heated after the liquid is poured out and the furnace is tilted to remove more of the aluminum eutectic. The above steps were repeated by remelting the first silicon crystals in aluminum and then growing the crystals again. The silicon crystals were acid washed to remove any residual aluminum. The crystals were washed with water after the acid washing. The silicon flakes were melted under. Gas was injected into the molten silicon. The remaining aluminum was then removed using a directional solidification or gas injection. Directional solidification was done using a temperature gradient. Portions of the top, bottom or sides of the ingot was trimmed to further remove impurities. The directional solidification was repeated.