NOVELTY - System (I) (100) comprises: a first load lock station; a second load lock station; and many process stations arranged in a serial configuration between the first load lock station and the second load lock station, where the process stations comprise first, second, third, fourth and fifth process stations.    USE - The system (I) is useful for manufacturing a photovoltaic device and the system (II) is useful for large scale manufacture of thin film photovoltaic modules (all claimed). The systems are also useful for the manufacture of multi junction and single junction solar module.    ADVANTAGE - The systems provide large scale manufacturing of photovoltaic device, and multi junction and single junction solar module.    DETAILED DESCRIPTION - System (I) comprises: a first load lock station; a second load lock station; and many process stations arranged in a serial configuration between the first load lock station and the second load lock station, where the process stations comprise: a first process station configured to deposit a first conductive layer over a surface of a substrate; a second process station configured to deposit a copper layer over the first conductive layer; a third process station configured to deposit an indium layer over the copper layer to form a copper-indium composite structure; a fourth process station configured to expose the copper-indium composite structure to sulfur-bearing species to form a copper-indium-sulfide layer; and a fifth process station to form a second conductive layer over the copper-indium-sulfide layer. INDEPENDENT CLAIMS are also included for:    (1) a system (II) comprising: many chambers configured to hold a substrate, where the substrate is optically transparent and has a lateral dimension of greater than or equal to 1.5 m; at least one load locks coupled to the chambers for transferring the substrate to and from each of the chambers; and a transfer tool configured to transfer the substrate between each of the chambers and at least one of the load locks, where at least a first one of the chambers is configured to form a copper-indium composite material with copper-rich stoichiometry overlying an electrode layer on the substrate, and at least a second one of the chambers is configured to subject the copper-indium composite material to a thermal process in a sulfur-bearing environment to form a chalcogenide structure photovoltaic film; and    (2) a system (III) comprising: a first load lock configured to hold substrate; a first process chamber coupled to the first load lock and configured to form a first electrode layer over a surface of the substrate; a second process chamber coupled to the first process chamber and configured to receive the substrate from the first process chamber and form a copper layer overlying the first electrode layer; a third process chamber coupled to the second process chamber and configured to receive the substrate from the second process chamber and form an indium layer overlying the copper layer; and a fourth process chamber coupled to the third process chamber and configured to receive the substrate from the third process chamber and subject the substrate to sulfur-bearing species at a first temperature to form a copper-indium-sulfide layer.    DESCRIPTION OF DRAWING(S) - The figure shows the simplified view diagram of the system for large scale manufacture of thin film photovoltaic devices.    Load locks (1, 2)    System (100)