NOVELTY - A solar battery comprises positive surface electrode, n-type doped silicon substrate, zinc oxide seed crystal layer (2), zinc oxide nanometer array buffer layer (3), n-type doped gallium nitride buffer layer, n-type doped indium gallium nitride layer, involuntary doped indium gallium nitride layer (6), p-type doped indium gallium nitride layer, p-type heavy doped gallium nitride window layer, positive surface electrode (9), and antireflection conducting film (10) which covers area of p-type heavy doped gallium nitride window layer except positive surface electrode.    USE - Solar battery of silicon substrate uni-junction gallium indium nitride.    ADVANTAGE - The solar battery has low production cost and high absorption rate of sunlight, and effectively solves problems of crystal lattice matching and heat expansion coefficient matching when extending gallium nitride thin film by substrate.    DETAILED DESCRIPTION - A solar battery comprises positive surface electrode, n-type doped silicon substrate, zinc oxide seed crystal layer (2), zinc oxide nanometer array buffer layer (3), n-type doped gallium nitride buffer layer, layer of n-type doped indium gallium nitride of formula InaGa1-aN, layer of involuntary doped indium gallium nitride of formula InbGa1-bN (6), layer of p-type doped indium gallium nitride of formula IncGa1-cN, p-type heavy doped gallium nitride window layer, positive surface electrode (9), and antireflection conducting film (10) which covers area of p-type heavy doped gallium nitride window layer except positive surface electrode.    a=0.15-0.35;    b=0.45-0.65; and    c=0.05-0.35.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the solar battery of silicon substrate uni-junction gallium indium nitride. (Drawing includes non-English language text).    Zinc oxide seed crystal layer (2)    Zinc oxide nanometer array buffer layer (3)    Involuntary doped indium gallium nitride layer (6)    Positive surface electrode (9)    Antireflection conducting film (10)