TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The material is enriched or deficient in a Group 11 atom. The polymeric precursor compound has a metal containing compound of formula ((Cu1-x1Agx1)u1(M11-y1M2y1)v1((S1-z1Sez1)R)w1). The thin film has a thickness of 0.001-100 micrometers, preferably 0.1-10 micrometers. The substrate is semiconductor, a doped semiconductor, silicon, gallium arsenide, insulators, glass, molybdenum glass, silicon dioxide, titanium dioxide, zinc oxide, silicon nitride, a metal, a metal foil, molybdenum, aluminum, beryllium, cadmium, cerium, chromium, cobalt, copper, gallium, gold, lead, manganese, molybdenum, nickel, palladium, platinum, rhenium, rhodium, silver, stainless steel, steel, iron, strontium, tin, titanium, tungsten, zinc, zirconium, a metal alloy, a metal silicide, a metal carbide, a polymer, a plastic, a conductive polymer, a copolymer, a polymer blend, a polyethylene terephthalate, a polycarbonate, a polyester, a polyester film, a Mylar (RTM: Polyester film), a polyvinyl fluoride, polyvinylidene fluoride, a polyethylene, a polyetherimide, a polyethersulfone, a polyetherketone, a polyimide, a polyvinylchloride, an acrylonitrile butadiene styrene polymer, a silicone, an epoxy, paper, and/or coated paper. The substrate is a shaped substrate, a tube, a cylinder, a roller, a rod, a pin, a shaft, a plane, a plate, a blade, a vane, a curved surface or a spheroid.M1, M2 = different atoms of Group 13;x1, y1, z1 = 0-1,u1, v1 = 0.5-1.5;w1 = 2-6;R = alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.Preferred Process: The substrate is heated at a temperature of 100-550 degrees C, preferably 200-400 degrees C. In the thin film material, the depositing is done by spraying, spray coating, spray deposition, spray pyrolysis, printing, screen printing, inkjet printing, aerosol jet printing, ink printing, jet printing, stamp printing, transfer printing, pad printing, flexographic printing, gravure printing, contact printing, reverse printing, thermal printing, lithography, electrophotographic printing, electrodepositing, electroplating, electroless plating, bath deposition, coating, dip coating, wet coating, spin coating, knife coating, roller coating, rod coating, slot die coating, Meyer bar coating, lip direct coating, capillary coating, liquid deposition, solution deposition, layer-by-layer deposition, spin casting, and/or solution casting. The process further comprises an optional step of selenization or sulfurization, either before, during or after steps (c) or (d). EXAMPLE - In an inert atmosphere glovebox, a Schlenk tube was charged with 0.36 g of metal compound of formula (indium(selenium-secondary butyl)3) and 0.15 g of metal compound of formula (silver-selenium-secondary butyl). Benzene (15 ml) was added, and the reaction mixture was stirred at 25 degrees C for 30 minutes. A light yellow solution was obtained. The solution was filtered through a filter cannula and the mother liquor was collected. The solvent was then removed under dynamic vacuum and worked up to obtain a polymeric precursor compound of formula (silver(Ag)0.9(selenium-secondary butyl)3.9 indium) (A). Then the obtained polymeric precursor was heated at 10 degrees C, per minute to a final temperature of 500 degrees C and holding the temperature at 500 degrees C for 30 minutes and worked up to obtain silver/indium/selenium (AIS) (AgInSe2) material.