NOVELTY - A plasma processing apparatus (100) comprises mounting table in processing chamber (102) and mounting the substrate; processing gas inlet unit that introduces processing gas into the processing chamber; gas exhaust unit that exhausts and depressurizes an inside of the processing chamber; and magnetic field generation unit having 2 magnet rings (210, 220) vertically spaced from each other and arranged along a circumferential direction of the processing chamber.    USE - Plasma processing apparatus for performing process on substrate by generating plasma of processing gas in depressurized processing chamber (claimed), the substrate comprising semiconductor wafer, flat panel display substrate, and solar cell substrate.    ADVANTAGE - The apparatus is capable of improving uniformity in plasma process by increasing plasma confining effect by a cusp magnetic field in a circumferential direction.    DETAILED DESCRIPTION - Plasma processing apparatus (100) comprises mounting table in processing chamber (102) and mounting the substrate; processing gas inlet unit that introduces processing gas into the processing chamber; gas exhaust unit that exhausts and depressurizes an inside of the processing chamber; and magnetic field generation unit having 2 magnet rings (210, 220) vertically spaced from each other and arranged along a circumferential direction of the processing chamber. Each of the magnet rings has segments of which magnetic poles are alternately reversed one by one or group by group along a circumferential direction of an inner surface of the magnet ring. Arrangement of upper and lower magnetic poles is changed by rotating one magnet ring in a circumferential direction with respect to the other magnet ring. An INDEPENDENT CLAIM is included for plasma processing.    DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view of a plasma processing apparatus.    Apparatus (100)    Processing chamber (102)    Lower electrode (110)    Upper electrode (120)    Magnet rings (210, 220)