TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal comprises a Group IB metal (preferably copper or silver).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The atomic layer deposition is photo-assisted atomic layer deposition or is liquid injection atomic layer deposition or is plasma-enhanced atomic layer deposition. The at least one metal fluorinated beta -diketonate precursor is delivered to a substrate by liquid injection. The at least one optionally-substituted hydrazine is delivered to a substrate by vapor draw. The at least one metal fluorinated beta -diketonate precursor is dissolved in an organic solvent. The method involves using at least one metal fluorinated beta -diketonate precursor; a co-reagent comprising at least one optionally-substituted hydrazine; and a further co-reagent selected from hydrogen, hydrogen plasma, ammonia, borane, and/or silane. The at least one precursor is delivered to a substrate selected from glass, plastic, silicon, silicon oxide, silicon nitride, tantalum, tantalum nitride, copper, ruthenium, titanium nitride, tungsten, and tungsten nitride. The film is formed at a temperature of 60-70 degrees C. The film is formed directly or indirectly on a glass substrate. Preferred Components: The fluorinated beta -diketonate is selected from hexafluoroacetyl acetate (hfac); trifluoroacetyl acetonate (tfac); thenoyltrifluoroacetetonate (ttfa); and bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate) (fod). The at least one metal fluorinated beta -diketonate precursor is of formula (hfac)MX (I). The at least one metal fluorinated beta -diketonate precursor is selected from (hfac)AgCOD, (hfac)AgTMED, (hfac)AgVTES, (hfac)CuCOD, (hfac)CuTMED and (hfac)CuVTES. The at least one metal fluorinated beta -diketonate precursor is (hfac)AgCOD or (hfac)CuCOD. The organic solvent is selected from toluene, heptane, octane, nonane and tetrahydrofuran.M=a Group IB metal (preferably copper or silver);X=a neutral ligand (preferably 1,5-cyclooctadiene (COD), triethylphosphine, trimethylphosphine, triphenylphosphine, triethylphosphate, trimethylphosphate, vinyltriethylsilane (VTES), vinyl trimethylsilane, tetramethylethylenediamine (TMED), ethylenediamine, tetramethylpropylenediamine, tertiary-butyl isocyanate, bistrimethylacetylene, allyl, methylallyl, dimethylallyl, butadiene or dimethylbutadiene). SPECIFIC COMPOUNDS - Use of 5 compounds i.e. hydrazine, t-butylhydrazine, phenylhydrazine of formula (I'), dimethylhydrazine and methylhydrazine is specified as the co-reagent.    EXAMPLE - An atomic layer deposition (ALD) process was developed using a silver precursor ((hfac)AgCOD) and a substituted hydrazine (tertiary-butyl hydrazine, TBH). Alternate pulses of these precursors with purge steps in-between were demonstrated to be well suited for formation of a coherent, continuous silver film at a variety of temperatures. By reducing the temperature the nucleation density was increased which enhanced film properties. Deposition was achieved at temperatures as low as 60-70 degrees C. The (hfac)AgCOD precursor was delivered to a glass substrate by liquid injection of a precursor solution (0.2M in toluene) and subsequent flash evaporation, whereas the TBH was delivered as neat precursor vapors by a vapor draw set up. Initially films were grown by ALD at 130 degrees C, 110 degrees C, 90 degrees C and 70 degrees C with the (hfac)AgCOD precursor and TBH on a glass substrate. In comparison study, use of alcohol as a co-reagent (i.e. n-propanol) was limited to deposition at temperatures to 110 degrees C (i.e. deposition with n-propanol effectively stopped at substrate temperatures of approximately 110 degrees C) whereas film growth occurred with TBH even at 60 degrees C ( approximately 6 nm). The silver films were characterized and their microstructure was correlated with the deposition parameters. The grain size of the films decreased with decreasing deposition temperature. This was accompanied by an increase in nucleation density. The electrical conductivity was measured in films grown at 110 degrees C at film thicknesses of approximately 20-25 nm. The electrical properties of ALD silver films deposited onto glass substrates were assessed using four-point probe measurements. The crystallinity of the film increased with deposition temperature.