NOVELTY - An oxide sinter comprises indium oxide, cerium oxide, and oxide of metallic element (M) chosen from at least one of titanium, zirconium, hafnium, molybdenum and tungsten. The atomic ratio of cerium with respect to total content of indium, cerium and metallic element (M) is 0.3-9 atomic%. Oxide sinter has indium oxide phase having bixbite-type structure as main crystalline phase, and cerium oxide phase having fluorite as secondary phase. The cerium oxide phase is finely dispersed in the form of crystal grains having average grain diameter of 3 mu m or less.    USE - Oxide sinter is used for sputtering target for transparent conductive film (both claimed). Uses include but are not limited to light emitting diode, solar cell, liquid crystal display element, optical disk, motor-vehicle window, heat wire reflecting film for construction, touch panel, antistatic film and frozen showcase.    ADVANTAGE - The transparent conductive film is formed using sputtering target at high speed, and has high productivity and refractive index, and low resistance. The generation of nodule is suppressed in transparent conductive film.    DETAILED DESCRIPTION - An oxide sinter comprises indium oxide, cerium oxide, and oxide of metallic element (M) chosen from at least one of titanium, zirconium, hafnium, molybdenum and tungsten. The atomic ratio of cerium with respect to total content of indium, cerium and metallic element (M) is 0.3-9 atomic%. The atomic ratio of metallic element (M) with respect to total content of indium, cerium and metallic element (M) is 1 atomic% or less. The atomic ratio of total content of cerium and metallic element (M) with respect to total content of indium, cerium and metallic element (M) is 9 atomic% or less. The oxide sinter has indium oxide phase having bixbite-type structure as main crystalline phase, and cerium oxide phase having fluorite as secondary phase. The cerium oxide phase is finely dispersed in the form of crystal grains having average grain diameter of 3 mu m or less. INDEPENDENT CLAIMS are included for the following:    (1) manufacture of oxide sinter;    (2) sputtering target; and    (3) transparent conductive film.