NOVELTY - Precursors (P1) are new.    USE - As solution-based precursors used as starting materials in film deposition processes such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition processes; for the deposition of thin films for semiconductor devices. Also useful for forming high-k gate dielectric layers for silicon, germanium and carbon based group IV elemental semiconductors or for forming high-k gate dielectric layers for indium-gallium-arsenic, aluminum-gallium-arsenic and other III-V high electron mobility semiconductors; for forming high-k capacitors for dynamic random access memory, flash, phase-change and resistive memory devices; as metal-based catalysts for gas purification, organic synthesis, fuel cell membranes and chemical detectors or as metal-based surfaces for electrode materials in fuel cells.    ADVANTAGE - The solution-based precursors do not decompose or solidify during vaporization and are therefore ideal for use in vapor phase deposition processes. If solution formulations are not used, many solid precursors by themselves can not be employed in vapor phase deposition because of decomposition or solidification in a sublimating source at elevated temperatures. By using the precursors of solution-based chemistry, it eliminates self-growth tendencies that have been observed when using neat metal-organic precursors.    DETAILED DESCRIPTION - Precursors (P1) of formula AxB'yM(m') are new.    M = metal;    m' = oxidation state of metal M (0-7);    x + y = m, if m is not 0; or    x + y = 1-8;    A and B'=cyclopentadienyl (Cp) and its derivatives (R1R2R3R4R5Cp), primary, secondary or tertiary alkyl groups (CnH2n+1), cycloalkyl groups (CaR12a-1), cycloalkyldienes (CuR22u-4), benzene and its derivatives (R1R2R3R4R5R6C6), amides (R1R2N) or bidentate ligands (R7E1=C(R9)-(C(R10)=C(R11))o-E2R8;    R1-R6 = H or alkyl (CmH2m+1);    m = 1-6;    n = 1-12;    a = 3-12;    R1 and R2 = H or alkyl;    u = 4-12;    E1 and E2 = N, O, P or S;    o = 0-4;    R7-R11 = H, alkyl or aryl.    INDEPENDENT CLAIMS are included for the following:    (1) forming a thin oxide film involving alternately delivering a metal precursor (P1) and an oxygen precursor to a substrate in the deposition chamber;    (2) forming a thin nitride film involving alternately delivering a metal precursor (P1) and a nitrogen precursor to a substrate in the deposition chamber; and    (3) thin film formed from a metal precursor (P1).