TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The providing of the liquid starting material, comprises feeding the particles made of the semiconductor material and/or a precursor compound of the semiconductor material, into a gas stream, where the gas stream exhibits a sufficiently high temperature for converting the particles made of the semiconductor material from solid state to liquid and/or gaseous state and/or for thermally decomposing the precursor compound. The gas stream is filled into a reactor container in which the liquid starting material is separated and/or condensed from the gas stream and the liquid starting material is fed directly from the reactor container into the melt of the semiconductor material. The base area, which at least partially comprises the produced semiconductor material, is melted in a controlled manner for feeding the liquid semiconductor material into the melt. The melting process is controlled with heating- and/or cooling medium that are arranged in the base area or associated with the base area.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The inner side of the reactor container, preferably in the regions that comes in contact with the liquid semiconductor material, is covered with a solid layer made of the solidified semiconductor material. The thickness of the solid layer is monitored using a sensor, preferably ultrasonic sensor, and the thermal equilibrium in the reactor container (101) is controlled by heating- and/or cooling medium. The reactor exhibits a solid base area, which at least partially comprises the produced semiconductor material. The heating- and/or cooling medium comprises at least one induction heater and/or a focusable light- and/or matter beam e.g. a laser or an electron beam. The source comprises a reactor container and/or a collector container, in which the liquid semiconductor material serving as the starting material is formed and/or collected. The device for controlled feeding of the liquid semiconductor material serving as the starting material, into the melt, comprises channels and/or pipes, which at least partially comprises quartz, graphite and/or silicon nitride. EXAMPLE - No suitable example given.