NOVELTY - System (I) comprises: (a) crucible (20) having interior region, where crucible is made of quartz material, and crucible is configured in upright position and has open region to expose melted material; and (b) energy source comprising arc heater (11) configured above open region and spaced by a gap between exposed melted material and muzzle region of arc heater to cause formation of determined temperature profile within vicinity of a center region of exposed melted material while maintaining outer regions of melted material at a temperature below a melting point of quartz material of crucible.    USE - The system is useful for forming high quality silicon material for photovoltaic devices and solar cells (all claimed).    ADVANTAGE - The system: is simple and easy to maintain; and provides silicon material for solar cells at lower cost.    DETAILED DESCRIPTION - System (I) comprises: (a) a crucible (20) having interior region, where crucible is made of quartz material (which is capable of withstanding at least 1400 degrees C), and crucible is configured in an upright position and has open region to expose melted material; and (b) an energy source comprising arc heater (11) configured above open region and spaced by a gap between exposed melted material and muzzle region of arc heater to cause formation of determined temperature profile within vicinity of a center region of exposed melted material while maintaining outer regions of melted material at a temperature below a melting point of quartz material of crucible. An INDEPENDENT CLAIM is also included for a system (II) comprising: components (a) and (b) as above per se; and (c) a nozzle region configured to output argon gas to cause a dimple region within a vicinity of the center region of the melted material.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of modified metallurgical silicon purification apparatus.    Vessel (10)    Heater (11)    Decompression tube (12)    Crucible (20)    Silicon melt (100)