NOVELTY - An amorphous carbon layer (102) is formed on graphite substrate (101). An aluminum nitride layer (103) is formed on the amorphous carbon layer. A n-type nitride semiconductor layer (s1) is formed on the aluminum nitride layer. A mask layer (106) is formed on the n-type nitride semiconductor layer (s1). A light absorption layer (108) is formed on the n-type nitride semiconductor layer (s2). A n-side electrode (112) is electrically connected to the n-type nitride semiconductor layers, to obtain a solar cell.    USE - Manufacture of solar cell (claimed) used for high-frequency device and power device.    ADVANTAGE - The method enables efficient and economical manufacture of solar cell.    DETAILED DESCRIPTION - A surface of a graphite substrate is subjected to oxygen ashing process to form an amorphous carbon layer on surface of the graphite substrate. An aluminum nitride layer is formed on the amorphous carbon layer by organometallic vapor-phase epitaxy. A n-type nitride semiconductor layer (s1) is formed on the aluminum nitride layer. A mask layer having opening portions is formed on the n-type nitride semiconductor layer (s1). A n-type nitride semiconductor layer (s2) is formed on portion of n-type nitride semiconductor layer (s1) exposed from the opening portions. A light absorption layer containing nitride semiconductors is formed on the n-type nitride semiconductor layer (s2). P-type nitride semiconductor layers are formed on the light absorption layer. A p-side electrode (111) is electrically connected to the p-type nitride semiconductor layers. A n-side electrode is electrically connected to the n-type nitride semiconductor layers, to obtain solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the solar cell.    Graphite substrate (101)    Amorphous carbon layer (102)    Aluminum nitride layer (103)    Buffer layer (104)    Mask layer (106)    Light absorption layer (108)    P-side electrode (111)    N-side electrode (112)