NOVELTY - The method involves sectionally applying gas to a surface of a substrate in an area of a locally structured semiconductor layer to be produced for precipitation, doping and/or etching. The area by area application of the gas is performed in such a manner that the gas flows in the surface of the substrate by a shadow mask and/or a nozzle, where recesses of the shadow mask correspond to a structure of the locally structured semiconductor layer to be produced and the nozzle exhibits an option for heating and/or plasma activation of the gas.    USE - Method for producing a locally-structured semiconductor layer on a substrate e.g. semiconductor substrate such as silicon semiconductor substrate, gallium arsenide semiconductor substrate, germanium semiconductor substrate and silicon carbide semiconductor substrate, carrier substrate, metal substrate, glass substrate and ceramic substrate, for production of a solar cell, deposition of an epitaxial semiconductor layer on the semiconductor substrate, deposition of micro-crystalline semiconductor layer on the semiconductor substrate, diffusion of a locally structured doped semiconductor layer into the semiconductor substrate, for structuring a semiconductor layer for a series circuit, for structuring a metal layer for the series circuit and for local metal deposition (all claimed).    ADVANTAGE - The gas is sectionally applied to the surface of the substrate in the area of the locally structured semiconductor layer to be produced for precipitation, doping and/or back-etching, thus enabling replacement of complex diffusion and/or laser or back-etching processes for production of selective emitter with emitter deposition.    DETAILED DESCRIPTION - The gas is selected from a group consisting of hydrogen chloride, hydrogen, chlorosilane, phosphine, hydride, boron trichloride, trimethylphosphine, gaseous flouride such as carbon tetrafluoride and sulfur hexafluoride and/or mixtures of gases.    DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view illustrating integrated interconnection with a deposited metal layer.    Non-conductive substrate (0)    Highly doped p-type semiconductor layer (1)    P-doped semiconductor layer (2)    N-doped semiconductor layer (3)    Metal layer (4)