TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The material further comprises a substrate on the graphene. In the material, the crystal plane of the inorganic material has an atomic arrangement of a hexagon, a tetragon, or a pentagon. In the material, the crystal system of the inorganic material is a cubic system, a tetragonal system, a hexagonal system, an orthorhomic system, a rhomoboheral system, a monoclinic system, or a triclinic system. In the material, a distance between atoms at first and third sites in the hexagon atomic arrangement of the inorganic material is -20% to 20% of a distance between carbon atoms at first and fourth sites of a hexagonal repeating unit of the graphene, where a shorter axis of the hexagon atomic arrangement of the inorganic material and a longer axis of the graphene are oriented in a substantially same direction. In the material, the inorganic material is an epitaxial layer on the graphene. The material comprises: a substrate having a surface; an inorganic material having a crystal system, where at least one crystal plane of the inorganic material is oriented to be parallel to the surface of the substrate; and graphene interposed between the surface of the substrate and the inorganic material. Preferred Components: The inorganic material comprises at least one of Ge, Si, Sn, SiC, AlAs, AlP, AlSb, Al2O3, BN, BP, GaAs, GaN, GaP, GaSb, GaNO, InN, InNO, InAs, InP, InSb, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, PbS, PbTe, AlN, BN, BNO, MgS, MgSe, or MgTe (preferably ZnO, GaN and/or Al2O3). The graphene has a sheet shape and an area of greater than or equal to 1 square millimeter. EXAMPLE - Zinc acetate powder of formula (C2H3O2)2Zn was dissolved in ethanol to prepare a 0.01 M solution. Then, the prepared 0.01 M solution was spin-coated or dip-coated on a graphene coated polyethylene terephthalate (PET) plastic substrate having the dimensions 2 cmx 2 cm, thereby forming a ZnO seed layer. The plastic substrate coated with graphene, on which the ZnO seed layer was formed, was immersed in a solution for growing ZnO in order to grow a ZnO nanorod. The ZnO growth solution was prepared by dissolving zinc nitrate of formula Zn(NO3)2.6H2O and hexamethylenetetramine (HMT) of formula C6H12N4 in deionized (DI) water (250 ml). The prepared ZnO growth solution had a concentration of 0.025 M Zn nitrate, 0.025 M HMT and DI Water. The plastic substrate, having the ZnO seed layer, was immersed in each of the prepared ZnO growth solutions and then the temperature was increased to 95 degrees C and held for 3 hours to obtain ZnO nanorod on the graphene coated plastic substrate. The formed ZnO nanorod had a length of 2000 nm and a diameter of 100 nm.