NOVELTY - The method comprises providing a silicon monocrystalline seed arranged in the bottom area of a crucible, where the monocrystalline seed has a seed surface with a crystal orientation (110) perpendicular to the bottom of the crucible and an edge surface with the crystal orientation (100) parallel to a side surface of the crucible, melting the high purity silicon and allocating in the crucible, and solidifying the liquid ultra-pure silicon starting from the bottom of the crucible on the seed surface of the silicon monocrystalline seed thus forming a silicon block (14) on the seed surface.    USE - The method is useful for producing silicon wafers for silicon solar cell (claimed).    ADVANTAGE - The method is capable of energy efficiently, simply and economically producing silicon wafers thus improving the efficiency of the solar cells.    DETAILED DESCRIPTION - The method comprises providing a silicon monocrystalline seed arranged in the bottom area of a crucible, where the monocrystalline seed has a seed surface with a crystal orientation (110) perpendicular to the bottom of the crucible and an edge surface with the crystal orientation (100) parallel to a side surface of the crucible, melting the high purity silicon and allocating in the crucible, solidifying the liquid ultra-pure silicon starting from the bottom of the crucible on the seed surface of the silicon monocrystalline seed thus forming a silicon block (14) on the seed surface of the monocrystalline seed, which largely takes over the crystal orientation, and dividing the silicon block into wafers (16) so that a wafer surface exhibits the crystal orientation, where more than 70% of the wafer surface exhibits the crystal orientation of the mono-crystalline structure. The silicon mono-crystalline seed is produced from a monocrystalline silicon column (15), where the column axis has a space orientation, and themselves composed of several parts, where the bottom of the crucible cover almost the entire surface of the parts in the same crystal orientation direction. The mono-crystalline silicon column forms the seed surface of the silicon mono-crystalline seed with the crystal orientation and the edge surface of the silicon mono-crystalline seed with the crystal orientation that are sliced. The silicon block is subdivided into rectangular silicon columns before separation into wafers, such that the column axis runs parallel to the seed surface of the silicon mono-crystalline seed. The wafer surface with the crystal orientation is texture etched with an alkaline etching solution. An INDEPENDENT CLAIM is included for silicon wafer.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a device for melting and crystallization of silicon for manufacturing silicon blocks (Drawing includes non-English language text).    Silicon block (14)    Silicon column (15)    Silicon wafers (16)    Crystal orientation parallel to a side surface of the crucible (100)    Crystal orientation perpendicular to a bottom of the crucible. (110)