NOVELTY - An amorphous silicon layer (14) is arranged on a substrate. A polycrystalline semiconductor layer (24, 26) is arranged on the silicon layer. A transparent conductive layer (18) is provided on polycrystalline semiconductor layer. A pattern layer (20) is provided on a surface of the transparent conductive layer for guiding incident light horizontally into polycrystalline semiconductor layer. The transparent conductive layer is made of transparent conductive oxide (TCO) that is indium tin oxide (ITO), aluminum zinc oxide (AZO), or zinc tin oxide (ZTO).    USE - Solar cell structure.    ADVANTAGE - The incident light is absorbed through transparent conductive layer, and is guided by pattern layer horizontally into distributing evenly in polycrystalline semiconductor layer, thus raising photoelectric conversion efficiency of the solar cell structure. The transparent conductive layer is made through chemical vapor deposition (CVD) process for controlling the crystallization direction of the transparent conductive film, in further controlling the surface appearance, and raising light capturing capability and functions of elements, thus achieving the advantage of lower production cost. Since the polycrystalline semiconductor layer is of a direct energy gap semiconductor, the polycrystalline semiconductor layer has better photoelectric conversion efficiency, offers more selections for absorption spectrum and characteristic modulations, also polycrystalline semiconductor layer can be made into thin film to reduce cost significantly, such that the material itself and its photoelectric conversion efficiency are less affected by the thermal effect, and that is helpful in maintaining stability of solar cell operated in the high focusing factor light gathering system, thus reducing deterioration of material and increasing service life of the solar cell. The increased transmittance of incident light is provided through the transparent conductive layer, with the guidance of incident light provided by pyramid-shape pattern layer.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of manufacturing solar cell structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of an enlarged portion of solar cell structure.    Solar cell structure (10)    Amorphous silicon layer (14)    Transparent conductive layer (18)    Pattern layer (20)    Polycrystalline semiconductor layers (24, 26)