NOVELTY - The method involves performing edge deletion process to remove respective portions (W1) of electrodes (110, 140) and a photoelectric conversion unit (PV) included in an outermost cell (SC) positioned at an end of a substrate (100) among a set of cells (UC). Edge isolation process is performed to remove respective another portions of the electrodes and the photoelectric conversion unit included in the outermost cell, where the latter portions of the edge isolation process overlap the former portions of the edge deletion process.    USE - Method for manufacturing a thin film solar cell e.g. double junction thin film solar cell and triple junction thin film solar cell, utilized to generate electric energy from solar energy.    ADVANTAGE - The substrate is made of the transparent material, so that light incident on the substrate efficiently reaches the photoelectric conversion unit. The method enables placing the cells contributing to generation of electric power in a region without including a dummy cell, thus increasing number of cells in the region, while increasing electric power. The method enables utilizing a laser to generate high output power in the edge deletion process, thus reducing process time by removing a large-sized damaged region of the cells on the substrate. The edge isolation process is performed after the edge deletion process is performed to reduce generation of leaked electric current. The method enables placing portion of the damaged region at location spaced apart from the outermost cell, so that electric current is not leaked, thus increasing efficiency of the thin film solar cell. The method enables securing and reducing size of the region in which the cells are formed, thus improving efficiency of a solar cell module. The method enables reducing a band gap of a semiconductor layer doped with germanium, so that the semiconductor layer can absorb large amount of light of long wavelength band, thus enhancing efficiency of the thin film solar cell.    DETAILED DESCRIPTION - The substrate is made of transparent material e.g. glass or plastic. The photoelectric conversion unit can include cadmium telluride material and copper indium gallium selenide material. The photoelectric conversion unit includes intrinsic semiconductor layer made of germanium, amorphous silicon and microcrystalline silicon. An INDEPENDENT CLAIM is also included for a thin film solar cell comprising a substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film solar cell.    Photoelectric conversion unit (PV)    Outermost cell (SC)    Cells (UC)    Portions of electrodes and photoelectric conversion unit (W1)    Substrate (100)    Electrodes (110, 140)