TECHNOLOGY FOCUS - ELECTRONICS - Preferred Parameters: In manufacturing the buffer layer of the photoelectric conversion device, in the preparation step, the component (N) is mixed in a mixed solution of the component (Z), component (S), component (C), and water. The reaction solution is prepared so as to have a pH of 7.5-11.0 after the film forming step and the liquid phase method is performed. After the film forming step, at least the buffer layer is annealed at a temperature not less than 150 degrees C but not more than a heat-proof temperature of the substrate. In preparing the reaction solution used in manufacturing the Zn compound layer, each component is mixed through concentration control so that the pH of the reaction solution becomes 7.5-11.0 after reaction. Preferred Components: In the preparation step, at least one kind of zinc source selected from zinc sulfate, zinc acetate, zinc nitrate, zinc citrate, and hydrates is used as the component (Z); the sulfur source which includes thiourea is used as the component (S); and the citrate compound which includes sodium citrate and/or a hydrate is used as the component (C). In manufacturing the photoelectric conversion device, the major component of the photoelectric conversion semiconductor layer (30) is at least one kind of compound semiconductor having a chalcopyrite structure. The kind of compound semiconductor is a semiconductor formed of a group Ib element, a group IIIb element, and a group VIb element, where: the group Ib element is at least one kind of element selected from copper (Cu) and silver (Ag); the group IIIb element is at least one kind of element selected from aluminum (Al), gallium (Ga), and indium (In); and the group VIb element is at least one kind of element selected from sulfur (S), selenium (Se), and tellurium (Te). The anodized substrate selected from an anodized substrate formed of an Al-based Al base with an aluminum oxide (Al2O3)-based anodized film formed on at least one surface side, an anodized substrate formed of a compound base of a iron (Fe)-based Fe material and an Al-based Al material attached to at least one surface side of the Fe material with an Al2O3-based anodized film formed on at least one surface side of the compound base, and an anodized substrate formed of a base of a Fe-based Fe material and an Al-based Al film formed on at least one surface side of the Fe material with an Al2O3-based anodized film formed on at least one surface side of the base is used as the substrate (10).