TECHNOLOGY FOCUS - POLYMERS - Preferred Apparatus: In silicon ribbon processing apparatus, the deposition unit comprises a reservoir holding a dopant source and where the deposition element comprises a nozzle for the delivery of the dopant source. The dopant source comprises a silicon particle ink. Deposition unit comprises a p-dopant source, an n-dopant source, a first nozzle to deliver the p-dopant to a first side of the silicon ribbon and a second nozzle to deliver n-dopant to a second side opposite the first side of the silicon ribbon. Deposition unit comprises a p-dopant source and an n-dopant source and nozzles configured to pattern the p-dopant and the n-dopant along the same side of silicon ribbon. Deposition unit comprises a chemical vapor deposition (CVD) system connected to precursor reservoirs for the deposition of an inorganic dielectric material. CVD system comprises a silane source and an ammonia source such that the CVD system deposits a layer of silicon nitride. The silicon ribbon processing apparatus further comprises a polymer sheet dispenser and lamination system configured for laminating the polymer sheet over the inorganic dielectric material. Deposition unit comprises a source for elemental metal deposition. In formation of passivation layer on a silicon sheet, the dielectric material or the dielectric precursor material comprises a dielectric precursor material comprising a spin-on glass. Dielectric material or the dielectric precursor material comprises a dielectric material and where the depositing comprises a CVD process where the precursor compositions are directed through a nozzle toward the silicon ribbon. The silicon ribbon is moving at a rate from about 0.1 centimeters per minute (cm/min) to about 50 cm/minute. In forming highly doped surface layer on silicon sheet, the first dopant material comprises doped silicon particles and where the curing comprises passing a heated roller over the coated surface. The first dopant material comprises a doped spin-on glass and where the curing comprises irradiation with a heat lamp. The first coated surface comprises a p-type dopant element and further comprising depositing a second dopant material for form a second coated surface on the silicon ribbon opposite the first coated surface, where the second dopant material comprises a n-type dopant. Preferred Method: Forming highly doped surface layer on silicon sheet comprises depositing a second dopant material such that the first coated material and the second coated material form a selected pattern on the first coated surface. In forming protective polymer layer on silicon sheet, laminating step comprises passing the polymer sheet and silicon ribbon together through rollers. Preferred Components: In forming protective polymer layer on silicon sheet, the polymer sheet comprises polycarbonate. The ribbon material has a length of at least about 25 meters and is wound on a spool.