NOVELTY - A device consists of an active layer comprising semiconductor layer (I), semiconductor layer (II), a transparent barrier layer, and a substrate (101). The barrier layer separates the active layer and substrate such that migration of deleterious species across the barrier layer is functionally impeded. The semiconductor layers comprise germanium carbide, germanium nitride, tin-germanium, tin oxide, gallium phosphide, gallium nitride, indium nitride, aluminum nitride, zinc oxide, magnesium oxide, and/or silicon-tin-germanium carbide.    USE - Device e.g. thin-film solar cell and thin-film transistor, is used for converting radiation to electrical energy, in electronic, optoelectronic, and energy conversion applications, including integrated circuits, flexible circuits, and microelectromechanical systems.    ADVANTAGE - The device has excellent economical efficiency, reliability, and performance characteristics.    DETAILED DESCRIPTION - A device consists of an active layer for converting radiation to electrical energy comprising semiconductor layer (I) of conductivity type (I) of thickness 30-150 nm, semiconductor layer (II) of conductivity type (II) of thickness 30-150 nm, a transparent barrier layer consisting of rare-earth compound(s), and a substrate transparent to a majority of radiation for converting. The barrier layer separates the active layer and substrate such that migration of deleterious species across the barrier layer is functionally impeded. The semiconductor layers comprise layer(s) chosen from germanium carbide (GeCx), germanium nitride (GeNx), tin-germanium (SnGex), tin oxide (SnOx), gallium phosphide (GaP), gallium nitride (GaNx), indium nitride (InNx), aluminum nitride (AlNx), zinc oxide (ZnOx), magnesium oxide (MgOx), and silicon-tin-germanium carbide (SivSnyGezCw), where x is greater than 0 and 20 or less, v, y and z are greater than 0 and 1 or less, and w is 0-1.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the physical metal oxide semiconductor layer structure formed on semiconductor-on-glass substrate.    Substrate (101)    Thin-film semiconductor (102)    Dielectric oxide (103)    Polycrystalline semiconductor gate contact (104)    Metal gate electrode (105)