NOVELTY - A photoelectric conversion device comprises: first electrode (340); crystalline silicon substrate (300); light-transmitting semiconductor layer (320) in contact with crystalline silicon substrate; and at least one second electrode (360), where crystalline silicon substrate and light-transmitting semiconductor layer are sandwiched between first electrode and second electrode, and light-transmitting semiconductor layer comprises organic compound and inorganic compound.    USE - As photoelectric conversion device (claimed) e.g. solar cell.    ADVANTAGE - The photoelectric conversion device has little loss of light absorption in window layer, and high conversion efficiency. The photoelectric conversion device includes crystalline silicon substrate having n-type conductivity and light-transmitting semiconductor layer having p-type conductivity, where light-transmitting semiconductor layer serves as window layer. The light-transmitting semiconductor layer includes organic compound having high hole-transport property, and inorganic compound comprising transition metal oxide having electron-accepting property. Since crystalline silicon or amorphous silicon is used for window layer, light loss due to light absorption in window layer is caused. But, although photo-carriers are generated also in window layer, minority carriers are likely to be recombined in window layer; thus, photo-carriers taken out as current are almost generated on back electrode side in crystalline silicon substrate, which is opposite side of p-n junction. Thus light absorbed in window layer is not substantially utilized, and window layer is preferably formed using material having light-transmitting property with respect to light in wavelength range where crystalline silicon has optical sensitivity. The composite material formed has high transmittance of light in wide wavelength range from visible light region to infrared region. The composite material is stable, and silicon oxide is not generated at interface between crystalline silicon substrate and composite material; thus, defects at interface can be reduced, resulting in improvement in lifetime of carriers. The composite material has extremely high passivation effect on silicon surface. Thus, photoelectric conversion efficiency of photoelectric conversion device can be improved. Also, n-type crystalline silicon substrate serves as light absorption layer, thus light loss caused by light absorption in window layer is reduced, and photoelectric conversion can be efficiently performed in light absorption layer.    DETAILED DESCRIPTION - A photoelectric conversion device comprises: first electrode (340); crystalline silicon substrate (300); light-transmitting semiconductor layer (320) in contact with crystalline silicon substrate; optionally amorphous silicon layer (311) in contact with other surface of crystalline silicon substrate; optionally silicon semiconductor layer (330) in contact with amorphous silicon layer; at least one second electrode (360), where crystalline silicon substrate, light-transmitting semiconductor layer, and optionally amorphous silicon layer, and silicon semiconductor layer are sandwiched between first electrode and second electrode, and light-transmitting semiconductor layer comprises organic compound and inorganic compound. The photoelectric conversion device alternatively comprises first amorphous silicon layer in contact with one of surfaces of crystalline silicon substrate; light-transmitting semiconductor layer in contact with first amorphous silicon layer; second amorphous silicon layer in contact with other surface of crystalline silicon substrate; silicon semiconductor layer in contact with second amorphous silicon layer; and at least one second electrode, where crystalline silicon substrate, first amorphous silicon layer, light-transmitting semiconductor layer, second amorphous silicon layer, and silicon semiconductor layer are sandwiched between first electrode and second electrode. The conductivity type of crystalline silicon substrate and silicon semiconductor layer are n-type, conductivity type of light-transmitting semiconductor layer is p-type, and conductivity type of amorphous silicon layer is i-type. The photoelectric conversion device further comprises light-transmitting conductive film over light-transmitting semiconductor layer. The inorganic compound is oxide of metal belonging to any of Group 4 to Group 8 in periodic table.    DESCRIPTION OF DRAWING(S) - The figure shows the photoelectric conversion device.    Crystalline silicon substrate (300)    First amorphous silicon layer (311)    Light-transmitting semiconductor layer (320)    Silicon semiconductor layer (330)    First electrode (340)    Second electrode (360)