NOVELTY - A nanocrystal/quantum dot sensitized crystalline silicon battery cell preparation method involves diffusing crystal silicon battery sheet into cleaning solution, cleaning, diffusing cleaned crystal silicon battery sheet into corrosive liquid, performing ultrasonic corrosion process and washing resultant product. The resultant product is impregnated into ammonium fluoride solution, followed by performing hydrogen-terminated surface process, performing chemical vapor deposition process, vulcanizing resultant product and treating vulcanized product in oven to obtain finished product.    USE - Method for preparing nanocrystal/quantum dot sensitized crystalline silicon battery cell that is utilized for manufacturing semiconductor photoelectric material and solar battery.    ADVANTAGE - The method enables preparing nanocrystal/quantum dot sensitized crystalline silicon battery cell in a simple and inexpensive manner.    DETAILED DESCRIPTION - A nanocrystal/quantum dot sensitized crystalline silicon battery cell preparation method involves preparing a cleaning liquid composition by mixing ammonia water (28%) and hydrogen peroxide (30%) in volume ratio of 1:1:3-4, diffusing crystal silicon battery sheet into the cleaning solution, cleaning ultrasonically for 5-15 minutes, and removing and washing resultant product by water, preparing a corrosive liquid composition by mixing hydrofluoric acid and anhydrous alcohol in a volume ratio of 1-3:4, diffusing cleaned crystal silicon battery sheet into corrosive liquid, performing ultrasonic corrosion process for 2-15 minutes, and removing and washing resultant product by water. The resultant product is impregnated into ammonium fluoride solution (0.1-1 mol/L) for 2-15 minutes, followed by performing hydrogen-terminated surface process by adding metal salt aqueous solution (0.01-5 mol/L) for 2-15 minutes, impregnating metal salt and removing and drying in a vacuum drying box, where sulfur (32 g) is placed in the vacuum drying box at distance of 15 cm away from the treating material, the temperature is maintained at 200-250 degrees C and pressure is maintained at 0.097-0.099 MPa. The resultant product is subjected to chemical vapor deposition process for 5-30 minutes, followed by vulcanizing the surface of the silicon chip to form nanocrystalline/quantum dot sensitized layer, immersing in water, washing ultrasonically for 2-15 minutes, treating at 150-200 degrees C in oven for 5-15 minutes to obtain finished product.