NOVELTY - The plasma generation source has a belt-like magnet (400) that is arranged around the exterior wall of a plasma chamber (100). Microwave irradiation equipment (200) irradiates microwave in plasma generation space, controls the scan direction and electric field of the irradiated microwave so that the magnetic field is formed on the plasma generation space by the pairs of belt-like magnets and the plasma density is enhanced according to the magnetic field distribution.    USE - Plasma-generating source for generating high density plasma to obtain diamond thin film used in semiconductor, organic LED, solar cell and LED. Can also be used in lamp and secondary battery.    ADVANTAGE - High density plasma can be distributed through large area at low operating pressure of electric field of magnetic field formed within the plasma chamber. The need to drive the microwave irradiation equipment to scan the magnetic structure can be avoided. The material can be uniformly deposited on the large sized substrate by the belt-like magnet. Since the plasma chamber is made of stainless steel, quartz or glass, the need for O-ring used for the vacuum sealing can be avoided. The mean free path of the generated neutral particle beam can be improved. By separating and independently controlling the plasma generating power and ion accelerating voltage, the damage of thin film by high-energy particle can be prevented. The sputtering device can evaporate the superior quality thin films using plasma generation source. The sputtering efficiency and directivity of the sputtered particle can be improved in the low operating pressure by generating high density plasma in the target vicinity. The kind and number of the target can be freely selected out and co-evaporation process can be performed effectively. The neutral particle beam generation source can be replaced and high flux neutral particle beam can be supplied to large area while minimizing plasma-substrate interaction. The energy necessary for the thin film deposition can be reduced. The sputtering device and neutral particle beam generation source can be easily assembled in the thin film depositing system for forming superior quality thin films.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for system for depositing thin film.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the plasma generation source.    Plasma chamber (100)    Microwave irradiation equipment (200)    Belt-like magnet (400)