TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The bottom electrode comprises a continuous conducting layer on top of the substrate extending under the insulating column. The insulating column is positioned in contact with the substrate. The bottom electrode comprises aluminum, titanium, titanium oxide and/or zinc oxide. The top electrode comprises platinum, gold, gold-palladium alloy, indium tin oxide and/or poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate). The substrate comprises silicon, aluminum, glass, quartz, fused silica and/or polyethylene terephthalate. The insulating column comprises glass, quartz, fused silica and/or polyethyelne terepthalate. In the electrode structure, where a length between adjacent insulating columns is less than or equal to 100 nm and matches a charge carrier diffusion length. The semiconducting material is a polymer blend of poly(3-hexylthiophene) (P3HT)/(6,6)-phenyl C61 butyric acid methyl ester (PCBM). In the electrode structure (II), the first and second electrodes comprise distinct conducting materials. The conducting material is aluminum, titanium, platinum, gold, gold-palladium alloy, titanium oxide, zinc oxide, indium tin oxide or poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate). The first width and the second width are equal to the predetermined linear distance between the first and second electrodes. The semiconducting material in the low-mobility semiconducting device comprising (II), is a conductive polymer blend comprising P3HT/PCBM, and the semiconducting material comprises inorganic nanocrystals. The first width and the second width are of the order of a characteristic charge carrier persistence length of the semiconducting material. In the low-mobility semiconducting device (III): the bottom electrode has a thickness (d) that is smaller or equal to twice a charging screening length (L(D)) having formula (L(D)) is equal to square root of epsilon s epsilon ok(B)T/e2n, where epsilon s is the relative permittivity of the semiconducting material, epsilon o is the vacuum permittivity, k(B) is the Boltzmann constant, T is temperature, e is the elementary charge and n is the charge carrier density; the thickness of the top electrode and the bottom electrode is less than 100 nanometers, where the substrate is coated by an oxidized conducting layer; the top electrode and the bottom electrode comprise aluminum, titanium, platinum, gold, gold-palladium alloy, titanium oxide, zinc oxide, indium tin oxide and/or poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate); the top electrode and the bottom electrode comprise distinct conducting materials; and where a thickness of the bottom electrode is 40 nm and a charge screening length of the semiconducting material is greater than 60 nm in a fully depleted state. Preferred Method: In the method of making the electrode structure, where depositing the first metal comprises depositing a metal onto the top surface of the lines of the grating, removing excess metal comprises removing metal from the bottom of the grooves, depositing the first metal comprises depositing a metal into the grooves and removing excess metal comprises removing metal from the top surface of the lines. The method further comprises: depositing a second metal; and removing the nanostructured template. The second metal comprises a different conducting composition from the first metal. The depositing the first metal comprises depositing a metal onto the top surface and a first side of the two opposing sides of the lines. The depositing the second metal comprises depositing a metal onto the top surface and a second side opposing the first side of the lines. The removing excess metal comprises removing metal from the top surface of the lines and the bottom of the grooves.