NOVELTY - A nanoscale chemical templating is performed by providing layer of oxide spheres on substrate (12); forming oxygen reactive element-containing layer (18) on upper surface of each oxide sphere and on exposed substrate upper surface; and performing anneal process which forms layer of compound oxide on oxide spheres in areas in which the oxygen reactive element-containing layer is in direct contact with the layer of oxide spheres, and further forming non-oxidized seed material in areas in which the oxygen reactive element-containing layer is in direct contact with exposed substrate upper surface.    USE - Method for nanoscale chemical templating (Claimed) for providing patterned substrate used in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing.    ADVANTAGE - The method uses oxygen reactive element-containing layer thus improving the ability to seed the growth of nanowires.    DETAILED DESCRIPTION - Nanoscale chemical templating comprises providing layer of oxide spheres on semiconductor substrate, the layer of oxide spheres having opening that exposes semiconductor substrate upper surface; forming oxygen reactive element-containing layer on upper surface of each oxide sphere and on exposed substrate upper surface; performing anneal process which forms layer of compound oxide on oxide spheres in areas in which the oxygen reactive element-containing layer is in direct contact with the layer of oxide spheres, the anneal process further forming a non-oxidized seed material in areas in which the oxygen reactive element-containing layer is in direct contact with exposed substrate upper surface; and growing semiconductor nanowires from non-oxidized seed material. An INDEPENDENT CLAIM is included for a semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view of a structure after forming an oxygen reactive element-containing layer.    Substrate (12)    Oxide layer (14')    Oxygen reactive element-containing layer (18)