NOVELTY - Etching for manufacturing a mono-crystalline silicon solar cell comprises etching at least a surface of a mono-crystalline silicon wafer by using an alkaline solution, where the alkaline solution contains an alkaline compound containing at least one compound selected from sodium hydroxide and potassium hydroxide, an alcohol compound, and a compound for releasing in the alkaline solution noble metal ions containing at least one ion selected from gold ions, silver ions, platinum ions, and palladium ions.    USE - The method is useful for etching for manufacturing a mono-crystalline silicon solar cell (claimed).    ADVANTAGE - Since the silver metal ions are catalytic in function for the increase of the silicon etching rate in the alkaline etching solution, the process time for the texturization of mono-crystalline silicon wafer is reduced.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are:    (1) a method for manufacturing a mono-crystalline silicon solar cell comprising etching at least a surface of a first-type mono-crystalline silicon wafer by using an alkaline solution, where the alkaline solution contains an alkaline compound containing at least one compound selected from sodium hydroxide and potassium hydroxide, an alcohol compound, and a compound for releasing in the alkaline solution noble metal ions containing at least one ion selected from gold ions, silver ions, platinum ions, and palladium ions; doping second-type impurities into the first-type mono-crystalline silicon wafer, so as to form a first-type area, a second-type area, and a junction between the first-type area and the second-type area; processing the edges of the first-type mono-crystalline silicon wafer so that there is substantially no short circuit between the edges of the first-type area and the second-type area; etching the at least a surface of the mono-crystalline silicon wafer to removing a phosphosilicate glass structure on the at least a surface; forming an anti-reflective layer on the first-type mono-crystalline silicon wafer; and forming an electrode structure on the first-type mono-crystalline silicon wafer so that the first-type area and the second-type area form a current loop via an external load; and    (2) an etching method applied in a method for manufacturing a crystalline silicon solar cell comprising etching at least a surface of a crystalline silicon wafer by using an alkaline solution, where the crystalline silicon wafer is selected from mono-crystalline silicon wafer and quasi-mono-crystalline silicon wafer, and the alkaline solution contains an alkaline compound containing at least one compound selected from sodium hydroxide and potassium hydroxide, an alcohol compound, and a compound for releasing in the alkaline solution noble metal ions containing at least one ion selected from gold ions, silver ions, platinum ions, and palladium ions.