TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first metal has a resistivity of less than 100 (preferably less than 15) mu Omega cm. The first metal is at least one silver, copper, gold, aluminum, calcium, beryllium, magnesium, sodium, molybdenum, tungsten, tin, zinc, nickel, potassium, lithium, iron, palladium, platinum, rubidium, chromium, and strontium. The second metal has a heat of mixing with the conductive powder of less than 0 kJ/mole. The conductive powder comprises silver, and the second metal is at least one lanthanum, cerium, praseodymium, promethium, samarium, lutetium, yttrium, neodymium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, thorium, calcium, scandium, barium, ytterbium, strontium, europium, zirconium, lithium, hafnium, magnesium, phosphorus, arsenic, palladium, gold, plutonium, gallium, germanium, aluminum, zinc, antimony, silicon, tin, titanium, cadmium, indium, platinum, and mercury. The third metal reduces a glass transition temperature of the metallic glass and/or increases a crystallization temperature of the metallic glass. The metallic glass comprises copper and zirconium, and the third metal is at least one aluminum, silver, nickel, titanium, iron, and hafnium. The third metal is present at 10 atomic percent or less. The metallic glass has a supercooled liquid region of 5-200 degrees C. The supercooled region is within a temperature range of 100-800 degrees C. The fourth metal has an absolute value of a Gibbs free energy of metal oxide formation greater than an absolute value of a Gibbs free energy of metal oxide formation of each of the first, second, and the third metals if present. The fourth metal has an absolute value of a Gibbs free energy of metal oxide formation of 100 kJ/mole or greater. The conductive powder, the metallic glass, and the organic vehicle are present at 30-98 wt.%, 1-50 wt.%, and 69-1 wt.% respectively. The metallic glass is substantially amorphous. The buffer layer further comprises a crystallized conductive material. The conductive material is included in at least one of the semiconductor layer and the buffer layer. EXAMPLE - None given.