NOVELTY - The cadmium telluride thin film photovoltaic device comprises a glass substrate (12), a transparent conductive oxide layer (14) disposed on the glass substrate, a cadmium sulfide thin film layer (18) disposed on the transparent conductive oxide layer, a cadmium telluride thin film layer (20) disposed on the cadmium sulfide layer, an anisotropic conductive layer disposed on the cadmium telluride thin film layer, a metal contact layer disposed on the anisotropic conductive layer, and a resistive transparent buffer layer (16).    USE - Used as a cadmium telluride thin film photovoltaic device such as solar panels.    ADVANTAGE - The cadmium telluride thin film photovoltaic device exhibits improved energy conversion efficiency and quality and increased life span, and can be manufactured in an economical and rapid manner.    DETAILED DESCRIPTION - The cadmium telluride thin film photovoltaic device comprises a glass substrate (12), a transparent conductive oxide layer (14) disposed on the glass substrate, a cadmium sulfide thin film layer (18) disposed on the transparent conductive oxide layer, a cadmium telluride thin film layer (20) disposed on the cadmium sulfide layer, an anisotropic conductive layer disposed on the cadmium telluride thin film layer, a metal contact layer disposed on the anisotropic conductive layer, a resistive transparent buffer layer (16) disposed between the transparent conductive oxide layer and the cadmium sulfide thin film layer, a first isolation scribe extending through the cadmium telluride thin film layer to the glass substrate to form isolated cells in the device, a series connecting scribe, and a second isolation scribe through the metal contact layer, the anisotropic conductive layer, the cadmium telluride thin film layer and the cadmium sulfide thin film layer. The cadmium sulfide thin film layer and the cadmium telluride thin film layer form a p-n junction. The anisotropic conductive layer: comprises a polymeric binder, conductive particles and an inert filler material; defines a thickness of 4-6 mu m; and has a resistance in a z direction of 0.1-100 Ohms and an x and y directions of greater than 100 k Ohms. The conductive particles have: a size sufficient to traverse the anisotropic conductive layer to provide a direct conductive connection between the cadmium telluride layer and the metal contact layer and an average diameter of 4-8 mu m that is equal to the thickness of the anisotropic conductive layer to 50% greater than the thickness of the anisotropic conductive layer; and comprise metal-plated glass beads, metal particles and/or metal-plated polymeric beads. The first isolation scribe: forms a part of the anisotropic conductive layer; is filled with the polymeric binder and the conductive particles; and has a width of 75-125 mu m. The adjacent individual conductive particles positioned within the first isolation scribe define a break to disrupt electrical flow through a plane defined by the anisotropic past layer. The series connecting scribe forms the part of the anisotropic conductive layer to contact the transparent conductive oxide layer to electrically connect adjacent cells to each other in series.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a cadmium telluride thin film photovoltaic device.    Glass substrate (12)    Transparent conductive oxide layer (14)    Resistive transparent buffer layer (16)    Cadmium sulfide thin film layer (18)    Cadmium telluride thin film layer. (20)