NOVELTY - The system comprises a load lock station (1306) comprising interfaces, process stations, and transfer stations. One of the interfaces provides access to the load lock station from an environment (1307) external to the system. The process stations are configured to perform a process associated with a set of processes for forming a thin film photovoltaic device. Each process station includes an individually controlled temperature system and individually controlled pressure system to maintain identified operating parameters during the process.    USE - The system is useful for manufacturing a thin film photovoltaic device such as multi junction and single junction solar modules.    ADVANTAGE - The system easily and economically manufactures the thin film photovoltaic device with high energy conversion efficiency and reliability.    DETAILED DESCRIPTION - The system comprises a load lock station (1306) comprising interfaces, process stations, and transfer stations. One of the interfaces provides access to the load lock station from an environment (1307) external to the system. The process stations are configured to perform a process associated with a set of processes for forming a thin film photovoltaic device. Each process station includes an individually controlled temperature system and individually controlled pressure system to maintain identified operating parameters during the process. Each transfer station: is mechanically coupled with an interface of the load lock station at a first end of the transfer station; is additionally coupled with one of the process stations at a second end of the transfer station so that a substrate (1310) is transferred between the load lock station and the process stations via the transfer station associated with the process station; and includes individually controlled gas delivery systems configured to provide an inert atmosphere between the load lock station and the process stations by delivering an inert gas to the transfer stations associated with the process stations. The set of processes for forming the thin film photovoltaic device comprise film deposition, patterning, etching, curing, annealing, or cleaning processes. The load lock station: includes an individually controlled pressure system configured to evacuate the load lock station from an ambient pressure to a vacuum pressure and to pressurize the load lock station from the vacuum pressure to the ambient pressure; and is centrally located among the process stations so that the transfer stations extend radially outwards from the load lock station to each of the process stations. The vacuum pressure is less than or equal to 6.2 mTorr. The transfer stations include the individually controlled pressure systems operable to maintain a pressure at or between the ambient pressure and the vacuum pressure so that an equivalent pressure is maintained between the load lock station, a process station and the associated transfer station. The system is configured to maintain, transfer and process substrates comprising lateral dimensions of two feet by five feet. One of the process stations is configured to perform physical vapor deposition via scanning magnetron sputtering. The sputtering target is five feet wide. A first process station is configured to form a copper (Cu)-indium (In) composite material with a Cu-rich stoichiometry overlying an electrode layer on the substrate. A second process station is configured to subject the copper-indium composite material to a thermal process in a sulfur-bearing environment to form a copper-indium-sulfur composite material. The thermal process is performed at a temperature of 500 degrees C. An INDEPENDENT CLAIM is included for a method of manufacturing thin film photovoltaic devices.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a system with a multi-chamber configuration.    Heaters (1305)    Load lock station (1306)    Environment (1307)    Substrate (1310)    Electrode layer. (1320)