NOVELTY - The device has nanowires (120), each having first end (130) and second end (140). A contact layer (174) electrically couples the nanowires through first end of each nanowire. A shunt (180) is electrically coupled to the contact layer. All of the nanowires are parallel to each other. The first contact resistivity between first end and contact layer ranges from 10-13 to 10-7 ohm-square meter. The first work function between first end and contact layer is less than 0.8 electron volts. The contact layer is associated with first thermal resistance ranging from 10-2 to 1010 Kelvin per Watt.    USE - Thermoelectric device for use in solar power, battery electrodes, energy storage, catalysis, and LEDs.    ADVANTAGE - Provides a thermoelectric device that includes arrays of nanostructures made of materials with advantageous electrical, thermal and mechanical properties. Ensures that the arrays of nanostructures are embedded in one or more fill materials with electrode structures of the thermoelectric devices. Includes electrode structures with multiple cooperating materials which are useful in achieving the desired goals. Uses fill materials that support the formation of good electrical and thermal contacts with the nanowires.    DETAILED DESCRIPTION - Fill materials (160) are located between the nanowires, such that the nanowires are fixed in position relative to each other by the fill materials. The fill materials are made of a material selected from a group consisting of photoresist, spin-on glass, spin-on dopant, aerogel, xerogel, nitride, and oxide. The contact layer is made of a material selected from a group consisting of a semiconductor, a semi-metal, and a metal. The semiconductor may be silicon, germanium, carbon, boron, phosphorus, nitrogen, gallium, arsenic or indium. The semi-metal may be boron, germanium, silicon or tin. The metal may be titanium, aluminum, copper, gold, silver, platinum, nickel, phosphorus, boron, chromium, lithium, tungsten, magnesium, titanium-tungsten, titanium-nickel, titanium-nitrogen, molybdenum, titanium-silicon, molybdenum-silicon, or tungsten-silicon. The shunt is made of a material selected from a group consisting of titanium, aluminum, copper, gold, silver, platinum, nickel, phosphorus, boron, chromium, lithium, tungsten, magnesium, titanium-tungsten, titanium-nickel, titanium-nitrogen, molybdenum, titanium-silicon, molybdenum-silicon, nickel-silicon, tungsten-silicon, graphite, steel, an alloy of nickel and iron, an alloy of cobalt, chromium, nickel, iron, molybdenum, and manganese. An INDEPENDENT CLAIM is also included for the thermoelectric device manufacture method.    DESCRIPTION OF DRAWING(S) - The drawing is a simplified diagram showing an array of nanowires with an electrode structure used in the thermoelectric device.    Nanowires (120)    First end of each nanowire (130)    Second end of each nanowire (140)    Fill materials (160)    Contact layer (174)    Shunt (180)