NOVELTY - P-Shaped and N-shaped sheet of epitaxial layer crystal battery is provided, P-type sheet and N-type epitaxial deposition thin film crystal of N-shaped sheet is provided, and epitaxial deposition of P-type crystalline silicon film is formed, to obtain suitable PN junction structure. P-Type silicon substrate is formed on low temperature epitaxial N-type monocrystal silicon thin film using hot wire chemical vapor deposition. Low temperature epitaxial mutant is prepared, annealed using nitrogen or argon gas and rapid-cooled, to obtain crystalline silicon solar battery.    USE - Preparation of mutation crystal silicon solar battery (claimed).    ADVANTAGE - The mutation crystal silicon solar battery is efficiently prepared with improved conversion efficiency, by simple method.    DETAILED DESCRIPTION - A P-shaped and N-shaped sheet of epitaxial layer crystal battery is provided, P-type sheet and N-type epitaxial deposition thin film crystal of N-shaped sheet is provided, and epitaxial deposition of P-type crystalline silicon film is formed, to obtain suitable PN junction structure. The P-type silicon substrate is formed on the low temperature epitaxial N-type monocrystal silicon thin film using a hot wire chemical vapor deposition. The silane and phosphine are added in the source gas flow rate ratio of 1:0.001-1:0.1, diluting ratio is controlled to 90-98%, and pressure is controlled to 1-5 Pa. The temperature of substrate temperature control is controlled at 1600-2000 degrees C, and distance between substrate and hot wire is controlled at 150-300 degrees C. The hot wire temperature is controlled to 3-8 cm in the controlling ratio of 10-300 nm, or plasma-assisted chemical vapor deposition, diluting ratio is controlled to 90-98%, pressure is controlled to 1-20 Pa, the temperature of substrate in the temperature control is controlled at 150-300 degrees C under radio frequency source power density of 0.1-2 W/cm2. The low temperature epitaxial mutant is prepared, annealed using nitrogen or argon gas to protect annealing or vacuum annealing, and temperature is increased at speed of more than 20 degrees C/minute for 10-200 seconds at 800-1200 degrees C, and rapid-cooled, to obtain crystalline silicon solar battery.