NOVELTY - Thick film paste composition comprises: (a) 80 to 99% by weight based on solids of an electrically conductive metal powder; (b) 0.1 to 5% by weight based on solids of one or more glass frits; (c) 0.0 to 15% by weight based on solids of a zinc-containing additive selected from zinc oxide, metallic zinc, compounds that generate zinc oxide upon firing, zinc alloys, and its mixtures; dispersed in (d) an organic medium comprising 0.01 to 10% by weight based on total organic medium of phosphonium surfactant.    USE - The composition is useful for manufacturing article, preferably semiconductor device, where the semiconductor device is a solar cell (all claimed). Preferably, it can be used in the front side of solar cell device.    ADVANTAGE - The invention provides compositions, structures, and devices which have improved electrical performance.    DETAILED DESCRIPTION - Thick film paste composition comprises: (a) 80 to 99% by weight based on solids of an electrically conductive metal powder; (b) 0.1 to 5% by weight based on solids of one or more glass frits; (c) 0.0 to 15% by weight based on solids of a zinc-containing additive selected from zinc oxide, metallic zinc, compounds that generate zinc oxide upon firing, zinc alloys, and its mixtures; dispersed in (d) an organic medium comprising 0.01 to 10% by weight based on total organic medium of phosphonium surfactant of general structure: (R1)(R2)(R3)(R4)P+X-.    R1, R2, R3, R4=selected from alkyl, alkyl/aryl and heteroaryl groups, where R1, R2, R3, R4 are the same or different; and    X=selected from halides, tetrafluoroborate, bis(trifluoromethanesulfonyl)amide, O,O-diethyl phosphorodithioate, methanesulfonate, decanoate, dodecylbenzenesulfonate, dicyanamide, bis(2,4,4-trimethylpentyl)phosphinate, dibutyl phosphate, hexafluorophosphate and its combinations.    INDEPENDENT CLAIMS are:    (1) an article comprising: (a) one or more substrates; (b) a deposit of a thick-film paste composition on the one or more substrates, the composition comprising: (i) 80 to 99% by weight based on solids of an electrically conductive silver powder; (ii) 0.1 to 5% by weight based on solids of one or more glass frit; (iii) 0.0 to 15% by weight based on solids of a zinc-containing additive selected from zinc oxide, metallic zinc, compounds that generate zinc oxide upon firing, zinc alloys, and its mixtures; dispersed in (iv) an organic medium comprising 0.01 to 10% by weight based on total organic medium of phosphonium surfactant of general structure: (R1)(R2)(R3)(R4)P+X-; and    (2) a method of manufacturing a semiconductor device comprising: (a) providing one or more semiconductor substrates; (b) applying an insulating film on the semiconductor substrate; (c) applying a thick-film paste composition on the insulating film where the thick-film paste composition comprises: (i) 80 to 99% by weight based on solids of an electrically conductive silver powder; (ii) 0.1 to 5% by weight based on solids of one or more glass frits; (iii) 0.0 to 15% by weight based on solids of a zinc-containing additive selected from zinc oxide, metallic zinc, compounds that generate zinc oxide upon firing, zinc alloys, and its mixtures; dispersed in (iv) an organic medium comprising 0.01 to 10% by weight based on total organic medium of phosphonium surfactant of general structure: (R1)(R2)(R3)(R4)P+X-; and (d) firing the semiconductor substrate, insulating film and thick-film paste composition where upon firing the organic medium is removed, and the silver and glass frit are sintered.