NOVELTY - The method comprises forming a first metal layer over the semiconductor surface, anodizing the first metal layer to create a porous metal-oxide layer formed over the semiconductor surface using acids, where pores present in the porous metal-oxide layer form an array of openings in the porous metal-oxide layer, and forming a contact metal layer over the porous metal-oxide layer, where parts of the contact metal layer extend into openings of array of openings such that the contact metal layer contacts the semiconductor surface through the array of openings in the porous metal-oxide layer.    USE - The method is useful for forming point metal electrical contacts to a textured semiconductor surface of a semiconductor device (claimed) such as silicon solar cell device.    ADVANTAGE - The method is capable of easily, rapidly, economically and effectively forming the point metal electrical contacts to a textured semiconductor surface of the semiconductor device with high-quality and throughput, long lifespan, excellent absorption capacity, improved performance, reduced size and less power consumption and without damage.    DETAILED DESCRIPTION - The method comprises forming a first metal layer over the semiconductor surface, anodizing the first metal layer to create a porous metal-oxide layer formed over the semiconductor surface using acids, where pores present in the porous metal-oxide layer form an array of openings in the porous metal-oxide layer, forming a contact metal layer over the porous metal-oxide layer, where parts of the contact metal layer extend into openings of the array of openings such that the contact metal layer electrically contacts the semiconductor surface through the array of openings in the porous metal-oxide layer, and heating the contact metal layer such that parts of the contact metal layer are driven through the dielectric layer to electrically contact the semiconductor surface through the array of openings in the porous metal-oxide layer. The first metal layer is formed onto the semiconductor surface such that after the anodizing step the porous metal-oxide layer contacts the semiconductor surface, is pre-processed to cause the pores, which result from the anodizing step to preferentially form in selected locations, and is deposited by sputtering and/or a thermal evaporation process. An INDEPENDENT CLAIM is included for a semiconductor device having a semiconductor surface on which an electrical contact is formed.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a solar cell with a rear surface contact formed as a point metal contact structure formed through a porous dielectric layer.    Crystalline silicon solar cell device (100)    P-type wafer substrate (105)    N-type emitter layer (110)    Anti-reflection coating (115)    N-type electrode. (120)