NOVELTY - The method involves depositing a barrier layer (218) comprising titanium within features (210) in a substrate (200). A material e.g. titanium material, is sputtered from a target in a presence of a plasma formed from process gas by applying direct current (DC) power to the target. Pressure of less than about 500 millitorr is maintained within a process chamber. Substrate bias radio frequency (RF) power of 5000 watt is provided to deposit a seed layer (224) comprising the material over the barrier layer. A conductive material (226) is deposited over the seed layer to fill the features.    USE - Method for forming a layer e.g. barrier/buffer layer i.e. titanium nitride seed layer and bulk dielectric layer, on a substrate placed in a process chamber. Uses include but are not limited to a silicon substrate, 3-5 compound substrate, silicon germanium substrate, epi-substrate, silicon-on-insulator substrate, display substrate such as LCD, plasma display and electro luminescence (EL) lamp display, LED substrate, solar cell array, solar panel and a semiconductor wafer.    ADVANTAGE - The method enables providing the barrier layer with increased wetting properties and reduced stress levels on the substrate after deposition so as to increase resistance to stress migration and electro-migration between the layers in an effective manner. The method enables limiting amount of charged ions of the process gas so as to reduce incidence of the charged inert gas ions bombarding the substrate, thus reducing damage to substrate surfaces and the barrier layer in an efficient manner. The method enables utilizing the barrier layer that serves as an electrical and physical barrier to prevent or limit diffusion of the material or electro-migration from the features into underlying and/or adjacent layers in an accurate manner. The method enables eliminating a need to deposit additional layers into the features of the substrate so as to protect the underlying substrate layers, thus allowing more space to deposit additional materials within the features.    DETAILED DESCRIPTION - The process gas is selected from a group consisting of argon, helium, nitrogen, hydrogen and oxygen. An INDEPENDENT CLAIM is also included for a computer readable medium comprising a set of instructions for forming layers on a substrate placed in a process chamber.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a substrate during different stages of a method for forming layers on a substrate.    Substrate (200)    Features (210)    Barrier layer (218)    Seed layer (224)    Conductive material (226)