TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: Silicon wafers are positioned between the two semiconductor-grade ceramic masks to protect the substrate's edges from heavy diffusion and the diffusion source is deposited at the start of a rapid temperature ramp up (50-100?C/minute) to produce good quality n+ and p+ diffusion layers simultaneously on the two opposing faces of the silicon wafer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The composition further comprises a silicon source including colloidal silica saturated with silicon dioxide, hexafluorosilicic acid (H2SiF6) or metal silicates. The fluoride source is H2SiF6, ammonium fluoride, hydrogen fluoride (HF), fluotitanic acid (H2TiF6), barium fluoride, boron tetrafluoride, sodium fluoride or other metal and non-metal fluorides. The composition further comprises a catalyst from elements of the inorganic reduction-oxidation system that promotes a redox reaction of the reduction-oxidation system. The catalyst is Pd(O2C3F3)2, H2TiF6, titanium tetrachloride (TiCl4) or titanium ammonium hexafluoride ((NH4)2TiF6). The composition is created by dissolving into an aqueous acidic component containing fluorine compound(s) containing an element of the reduction-oxidation system. The compound is iodine pentoxide (I2O5) or lead dioxide (PbO2). The compound is I2O5, vanadium oxide (V2O5), PbO2, cobalt(II, III) oxide (Co3O4), niobium oxide (NbO), NbO2, Nb2O5, potassium ferricyanide (K3(FeCN6)), iron oxide (FeO), Fe3O4, or Fe2O3. The composition further comprises cobalt hydroxide. The aqueous solution comprises H2TiF6 or HF and the reduction-oxidation system comprises K3Fe(CN)6, where the composition does not contain organic components or Si source. The aqueous solution comprises H2TiF6 or HF and the reduction-oxidation system comprises V2O5, where the composition does not contain organic components or Si source. The aqueous solution comprises HF and the reduction-oxidation system comprises PbO2, I2O5, or Co3O4. The composition further comprises metallic compounds, where upon exposure to a silicon substrate, the composition forms silicon oxide-based conductive films on the substrates. The metallic compounds are metallic nitrides, metallic chlorides, and metallic fluorides. The metallic nitrides are bismuth, titanium, cobalt, copper, selenium or cerium based nitrides and the metallic chlorides and fluorides are bismuth, titanium, cobalt, vanadium, cerium, aluminum, lanthanum, or magnesium based chlorides and fluorides. The substrate comprises silicon and the oxide layer comprises silicon oxide (SiOx). The surface comprises greater than or equal to 50% oxygen at the face of the layer and no oxygen at the oxide semiconductor interface. The substrate is exposed to a room temperature wet chemical growth solution comprising a metal additive, where a conductive oxide film is grown. The metal additives include metallic nitrides from bismuth, titanium, cobalt, copper, selenium or cerium based nitrides and metallic chlorides and fluorides comprise bismuth, titanium, cobalt, vanadium, cerium, aluminum, lanthanum, or magnesium based chlorides and fluorides. The additive includes a boron source from perboric acid, boron oxide or boron iodide. The method is used to accomplish creating a selective emitter, creating an antireflection coating, creating a passivation film, creating a textured antireflection coating, removing the emitter, creating a transparent conductive oxide, creating an oxide-based thin film, creating a sacrificial layer, thinning the emitter, cleaning an electronic device surfaces, removing a phosphosilicate glass coating layer, or passivating the non-metalized surfaces of Vertical MultiJunction Si solar cells. EXAMPLE - No suitable example given.