NOVELTY - The method comprises: subjecting a metallurgical silicon into a crucible apparatus to a thermal process to cause the metallurgical silicon to change from a first state to a second state, where the second stage is a molten state not exceeding 1500 degrees C and the thermal process is derived from a thermal source; causing a first portion of impurities to be removed from the metallurgical silicon in the molten state; and shifting the crucible apparatus in a direction including a rotating, a horizontal and/or a vertical movement relative to a thermal source.    USE - The method is useful for purifying silicon bearing materials for photovoltaic applications such as solar cells.    ADVANTAGE - The method is capable of rapidly, effectively and economically purifying the silicon bearing materials with high quality and flexibility and without pollution in an environmentally-friendly manner.    DETAILED DESCRIPTION - The method comprises: subjecting a metallurgical silicon into a crucible apparatus to a thermal process to cause the metallurgical silicon to change from a first state to a second state, where the second stage is a molten state not exceeding 1500 degrees C and the thermal process is derived from a thermal source; causing a first portion of impurities to be removed from the metallurgical silicon in the molten state; shifting the crucible apparatus in a direction including a rotating, a horizontal and/or a vertical movement relative to a thermal source providing the thermal process by a mechanism coupled to the crucible apparatus such that a solidus-liquidus interface of the molten state achieves one-directional cooling purification without a temperature segregation coefficient management of a concentration of remaining impurities in the molten state within a vicinity of the solidus-liquidus interface; cooling the molten metallurgical silicon from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region; and solidifying the liquid state region to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%. The thermal process: uses an arc heater (4); has a source of 3000 degrees C; and comprises a thermal pulse or pulses and a convection process of the molten state. The crucible apparatus remains in a stationary state. The molten metallurgical silicon has a temperature profile characterized by a higher temperature region within a center region and a lower temperature region within an edge region of the crucible apparatus. The molten state is free from any foreign objects for circulating the molten metallurgical silicon. The second state of the metallurgical silicon includes an inner portion having a temperature of 2500-3000 degrees C and an outer portion having an outer temperature not exceeding 1500 degrees C. The method further comprises: subjecting an upper molten region of the metallurgical silicon with an inert blanket of gas; subjecting a portion of the upper molten region to a hydrogen gas to cause a reaction and remove a boron impurity with the hydrogen gas to remove the oxygen impurity, where the metallurgical silicon has a purity of 99%; subjecting a region of the molten metallurgical silicon to a hydrogen species to remove a boron impurity using a gas consisting of boron trioxide, hydrated boron oxide (B2O3.H2O), boron hydride (BH4), diborane (B2H6), borane (BH3), boric acid, metaboric acid (HBO2), hydrogen borate (HBO3), hypoboric acid (H4B2O4), boronic acid (H3BO2), hypoborous acid, pyroboric acid, boron oxide, tetraboron trioxide or tetraboron pentoxide; and causing a convective current from a temperature differential between the inner portion and the outer portion of the metallurgical silicon. The hydrogen species are injected using channel regions. A crucible (2) is maintained in a vacuum to keep the molten metallurgical silicon free from external contaminants. The vacuum is selected to achieve a desired impurity removal characteristic from the molten metallurgical silicon.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of an apparatus for growing single silicon crystals.    Vessel (1)    Crucible (2)    Crucible support (3)    Arc heater. (4)