NOVELTY - Combinatorial method of forming a solar substrate, comprises: (301) depositing a transparent conductive oxide (TCO) film by physical vapor deposition, where depositing the TCO comprises a site-isolated deposition to form site-isolated regions on a single substrate through the physical vapor deposition; (302) annealing the TCO film; forming a molecular masking layer on the TCO film; and (303) etching the TCO film to provide a textured surface that scatters light incident upon the textured surface, where at least one of the depositing, the annealing or the etching is performed combinatorially.    USE - The method is useful in forming a solar substrate (claimed) useful as a thin film photovoltaic solar cell.    ADVANTAGE - The method provides: a TCO having a texture that can trap light within a wide light spectrum at a high efficiency; and a thin film photovoltaic solar cell of high efficiency at reduced costs.    DETAILED DESCRIPTION - Combinatorial method of forming a solar substrate, comprises: (301) depositing a transparent conductive oxide (TCO) film by physical vapor deposition at less than 250 degrees C, where the depositing of the TCO comprises a site-isolated deposition to form site-isolated regions on a single substrate through the physical vapor deposition, and each site isolated region has a uniform composition of zinc oxide; (302) annealing the TCO film at greater than 200 degrees C; forming a molecular masking layer on the TCO film, where the molecular mask allows for differential texturing, and the forming of the molecular masking layer comprises applying an etching formulation to the surface of the TCO film; and (303) etching the TCO film to provide a textured surface that scatters light incident upon the textured surface, where at least one of the depositing, the annealing or the etching is performed combinatorially.    DESCRIPTION OF DRAWING(S) - The figure illustrates a flowchart showing a method of processing a transparent conductive oxide film and completing a solar cell.    Depositing a TCO comprising zinc oxide by physical vapor deposition at less than 250 degrees C (301)    Annealing the TCO at greater than 200 degrees C (302)    Etching the TCO with a wet chemistry to texture the TCO (303)    Depositing silicon thin film layers and a back contact to form the solar cell (304)