NOVELTY - Organic composition comprises: a heterocyclic compound (I); and a metal-containing compound comprising a transition element-containing compound and/or a lanthanide-containing compound.    USE - The composition is useful in semiconductor device (transistor), electronic device) (all claimed), solar cell, memory device, organic light emitting device, photosensor and laser device.    ADVANTAGE - The composition provides semiconductor device and electronic device having improved charge mobility due to a reduced grain boundary.    DETAILED DESCRIPTION - Organic composition comprises: a heterocyclic compound of formula (X1-Y1-(-Ar1-)n-Y2-X2) (I); and a metal-containing compound comprising a transition element-containing compound and/or a lanthanide-containing compound.    Ar1 = 6-30C aromatic ring group, 4-30C heteroaromatic ring group, or 6-30C condensed polycyclic group (all optionally substituted);    n = 1-100;    Y1, Y2 = 6-30C arylene having a conjugation structure, 6-30C alkenylene having a conjugation structure (both optionally substituted) or single bond;    X1, X2 = 1-20C alkyl, 3-20C cycloalkyl, 1-20C alkoxy (all optionally substituted), 6-30C aryl, 3-20C cycloalkyl, 2-30C heteroaryl (all substituted with a carboxy group), 2-30C N-containing aromatic ring, H, halo, NR7R8 or carboxy (-COOH); and    R7, R8 = 1-20C alkyl, 3-20C cycloalkyl, 1-20C alkoxy, 6-30C aryl, 2-30C heteroaryl (all optionally substituted) or H.    Provided that at least one of X1 and X2 is 6-30C aryl, 3-20C cycloalkyl, 2-30C heteroaryl (all substituted with a carboxy group), 2-30C N-containing aromatic ring group, or carboxy (-COOH). INDEPENDENT CLAIMS are also included for a transistor (20) or an electronic device, comprising an infinite coordination polymer (ICP) including the organic composition, where the ICP includes at least two compounds linked to each other through a transition element ion or a lanthanide ion.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of the transistor.    Transistor (20)    Substrate (22)    Gate electrode (24)    Insulation layer (26)    Active layer (28)