TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal particles are copper powder. The metal particles include combination of nanometer and micrometer-sized particles.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The composition (C1) further comprises free radical initiator (up to 5 wt.%). In the composition (C1), the metal particle to liquid monomer is 0.1-0.8 (preferably 0.2-0.5). Preferred Method: In the method, the heating is at temperature of 210-275 (preferably 220-250) degrees C. The substrate is a thin film photovoltaic cell having TCO layer disposed on it. The substrate is a film stack comprising an antireflective coating, and a crystalline silicon p-n junction-based solar cell. The substrate comprises a crystalline silicon solar cell and includes a patterned surface, and the providing of the conductive composition including direct screen printing of the conductive composition onto the patterned surface. The patterned surface is formed by selective removal of portions of a dielectric film and deposition of a barrier layer in the removed positions. Preferred Components: The liquid monomer is a self crosslinking monomer selected from trimethylolpropane trimethacrylate, trimethylolpropane triacrylate, di(trimethylo1propane) tetraacrylate, glycerol propoxylate triacrylate, pentaerythritol tetraacrylate, and/or trimethylolpropane propoxylate triacrylate. EXAMPLE - A solution containing copper formate (2.3 wt.%) in neodecanoate (NDA) was prepared at a temperature of 80 degrees C then cooled to room temperature before using it to form the following copper conductor mixture. The solution was mixed with micron-sized and nanometer-sized copper powders. The average diameters of the two size ranges of copper powders are 1 micron and 60 nanometer, respectively. The copper conductor mixture was prepared having copper powder, micron powder and nanometer powder in a ratio of 0.121:0.698:0.181. The mixture was milled by a three roll milling machine to break particle aggregates. Such prepared copper paste i.e. a conductive composition was then printed on a silicon substrate and consolidated in 5% H2 in N2 to 220 degrees C with 10 minutes holding time. The electrical resistance of the formed copper trace was measured and then transferred into electrical resistivity, which was 9.8 mu Omega -cm. The thickness of the formed copper film was 10 pm.