NOVELTY - The device has crystalline semiconductor particles (104) e.g. germanium and silicon or silicon-germanium, placed over a first electrode (102). A semiconductor layer is placed over the crystalline semiconductor particles. A second electrode is placed over the semiconductor layer, where adjacent particles are fusion-bonded. The crystalline semiconductor particles are of first conductivity type. The semiconductor layer is of second conductivity type, which is different from the first conductivity type.    USE - Semiconductor device i.e. photoelectric conversion device, for use as a solar cell installed outdoor for generating electrical power from light energy. Can also be used as a low electric power source for consumer appliance such as calculator and clock.    ADVANTAGE - The device provides high conversion efficiency, and has favorable productivity. The device uses one-conductivity type or intrinsic crystalline semiconductor particles of which the adjacent particles are fusion-bonded to each other, so that movement of photogenerated carriers along light-accepting flat surface direction is not inhibited and efficiency of carrier collection is improved, thus improving photoelectric conversion efficiency. The device forms a p-n junction when retaining shape of the crystalline semiconductor particles, so that area of light acceptance that contributes to photoelectric conversion is increased, thus improving conversion efficiency. The device can be manufactured without using a large silicon ingot, so that raw material of silicon is not wastefully consumed.    DETAILED DESCRIPTION - The first electrode is made of material selected from a group consisting of aluminum, indium, tin and zinc. The second electrode is made of material selected from a group consisting of indium oxide and indium tin oxide or zinc oxide.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photoelectric conversion device.    Substrate (101)    Electrode (102)    Crystalline semiconductor particles (104)