TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The sulfur is introduced into the vapor chamber via a first cracking cell, and the selenium is introduced into the vapor chamber via a second cracking cell. The method further comprises: using the first cracking cell to crack the sulfur before the sulfur is introduced into the vapor chamber; using the second cracking cell to crack the selenium before the selenium is introduced into the vapor chamber; regulating an amount of sulfur introduced into the vapor chamber by at least one adjusting needle valve and adjusting a temperature of the bulk zone; regulating an amount of selenium introduced into the vapor chamber by at least one adjusting needle valve and adjusting a temperature of the bulk zone; forming a metal grid electrode (702) on the transparent conductive electrode; and dividing the solar cell into a many isolated substructures using a laser or mechanical scriber. The absorber layer constituent components further comprise copper, zinc and tin, where the copper, zinc and tin are deposited onto the molybdenum layer: using thermal evaporation; or using sputtering, electron-beam evaporation, vacuum deposition, physical deposition or chemical deposition. The buffer layer is formed using chemical bath deposition or vacuum deposition. The step of forming the transparent conductive electrode on the buffer layer comprises: depositing a thin layer of intrinsic zinc oxide on the buffer layer; and depositing a transparent conductive oxide layer (602) on the intrinsic zinc oxide layer. The buffer layer is formed having a thickness of 40-100 nm. The layer of intrinsic zinc oxide is deposited to a thickness of 40-100 nanometers. The transparent conductive oxide layer is deposited by sputtering. Preferred Components: The substrate comprises a soda-lime glass substrate or a metal foil substrate. The substrate has a thickness of 1-3 mm. The molybdenum layer (104) has a thickness of 600 nm to 1 mu m. The buffer layer comprises at least one cadmium sulfide, zinc sulfide, cadmium selenide and zinc selenide. The transparent conductive oxide layer comprises aluminum-doped zinc oxide or indium-tin-oxide.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The first cracking cell comprises: a bulk zone containing the sulfur; a cracking zone for cracking the sulfur; and a needle valve between the bulk zone and the cracking zone for controlling a flux of the sulfur into the cracking zone and into the vapor chamber. The second cracking cell comprises: a bulk zone containing the selenium; a cracking zone for cracking the selenium; and a needle valve between the bulk zone and the cracking zone for controlling a flux of the selenium into the cracking zone and into the vapor chamber. EXAMPLE - No suitable example given.