NOVELTY - Forming metal wrap through (MWT) silicon solar cell involves: providing p-type silicon wafer with holes forming vias, n-type emitter, anti-reflective coating (ARC), and front-side metallization in form of bottom set of thin conductive metal collector lines having no contact with holes; applying conductive metal paste having no or only poor fire-through capability and containing particulate electrically conductive metal and organic vehicle, over bottom set and to holes; drying paste; and firing paste, where top set of thin conductive metal collector lines superimposes bottom set.    USE - For production of metal wrap through (MWT) silicon solar cell (claimed).    ADVANTAGE - The forming of MWT silicon solar cell allows for production of MWT silicon solar cells having front-side metallization, where portion of the front-side metallization is two-layered. Moreover, process allows for simultaneously forming second layer of two-layer portion of front-side metallization and metallization of inside of holes of MWT silicon solar cells, where second layer of two-layer portion and metallization of inside of holes form continuous metallization i.e. top set of thin conductive metal collector lines and metallization of inside of holes form continuous or uninterrupted entity, and as a consequence top set of thin conductive metal collector lines is in direct electric contact with metallization of inside of holes; whereas otherwise most solar cells are in form of silicon wafer that has been metallized i.e. provided with metal contacts which are electrically conductive, in which front-side metallization is in form of H pattern, whereas back-side metallization is aluminum anode in electric connection with silver or silver/aluminum busbars or tabs of H pattern, and photoelectric current is collected from front-side busbars and back-side busbars or tabs. By the improved process, the fired conductive metal paste adheres well to holes i.e. it adheres well to n-type emitter surface of inside of holes of silicon wafer, where good adhesion is important with regard to long service life of MWT silicon solar cells. Further, conductive metal paste with its at best poor fire-through capability does not or not significantly damage n-type emitter when steps, when third and fourth steps of process are carried out, which then avoids shunting characteristics.    DETAILED DESCRIPTION - Production of metal wrap through (MWT) silicon solar cell involves: providing p-type silicon wafer with holes forming vias between front-side and back-side of wafer, n-type emitter extending over entire front-side and inside of holes, anti-reflective coating (ARC) layer on front-side that leaves out inside of holes, and front-side metallization in form of bottom set of thin conductive metal collector lines having no contact with inside of holes; applying conductive metal paste over bottom set of thin conductive metal collector lines and to holes of silicon wafer to form continuous metallization which comprises top set of thin conductive metal collector lines and metallization of inside of holes, where conductive metal paste has no or only poor fire-through capability and comprises at least one particulate electrically conductive metal selected from silver, copper and nickel, and organic vehicle; drying applied conductive metal paste; and firing dried conductive metal paste, so that wafer reaches peak temperature of 700-900 degrees C, where top set of thin conductive metal collector lines superimposes bottom set of thin conductive metal collector lines. The holes have narrow rim around their front edges left out by ARC layer and bottom set of thin conductive metal collector lines has no contact with rims. The conductive metal paste comprises organic electrically conductive metal (50-92 wt.%), and vehicle (10-45 wt.%). The conductive metal paste further comprises at least one glass frit selected from lead-free glass frits with softening point temperature of 550-611 degrees C and containing SiO2 (11-33 wt.%), Al2O3 (greater than 0 to 7 wt.%) and B2O3 (2-10 wt.%); and lead-containing glass frits with softening point temperature of 571-636 degrees C and containing PbO (53-57 wt.%), SiO2 (25-29 wt.%), Al2O3 (2-6 wt.%), and B2O3 (6-9 wt.%), where at least one of lead-free glass frits contains Bi2O3 (40-73 wt.%). The total content of glass frit in conductive metal paste is (0.25-8 wt.%). The conductive metal paste is applied as conductive metal layer or as conductive metal plug, or by printing. The firing is performed as co-firing together with at least one metal paste selected from back-side aluminum paste that has been applied to back-side to form aluminum back anode, and backside silver or silver/aluminum paste that has been applied to back-side to form silver or silver/aluminum back collector contacts. An INDEPENDENT CLAIM is included for the MWT silicon solar cell made by the process.