NOVELTY - The apparatus (1) has heater (22) that is provided for heating reactor (10). The silicon-tetrachloride gas is supplied in reactor from silicon-tetrachloride gas supply port (16a). The temperature of reactor is set to precipitation temperature range of silicon. A silicon tetrachloride is restored with zinc within reactor. The silicon is precipitated in wall portion corresponding to area set by precipitation temperature range of silicon in reactor. The silicon precipitated to silicon precipitation area is peeled by moving rod element (24b) to silicon precipitation area.    USE - Silicon manufacturing apparatus for solar cell used in electronic device.    ADVANTAGE - The manufacturing cost of the silicon can be reduced. The yield can be improved. The silicon can be recovered continuously. The rod element is moved using the simple structure. The mixing of element material with silicon precipitates can be prevented. The manufacture of polycrystalline silicon can be performed continuously, without replacing the reactor.    DETAILED DESCRIPTION - The reactor is standingly arranged in a perpendicular direction. A silicon-tetrachloride gas supply line (16) is provided for supplying silicon-tetrachloride gas in reactor from silicon-tetrachloride gas supply port. A zinc gas supply line (18) is provided for supplying zinc gas in reaction container from zinc gas supply port (18a). The zinc gas supply port is in communication with reactor. A rod element is penetrated upon inside of reactor. The zinc gas is supplied in reaction container from zinc gas supply port. The expansion pipe (24c) is provided with rod element. The rod element which opposes the silicon precipitation area is extended in perpendicular direction. The reactor is equipped with inner tube (26) removably inserted inside reactor. A plate-shaped element is connected with inner wall face of inner tube. An INDEPENDENT CLAIM is included for silicon manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon manufacturing apparatus.    Silicon manufacturing apparatus (1)    Reactor (10)    Silicon-tetrachloride gas supply line (16)    Silicon-tetrachloride gas supply port (16a)    Zinc gas supply line (18)    Zinc gas supply port (18a)    Heater (22)    Rod element (24b)    Expansion pipe (24c)    Inner tube (26)