NOVELTY - The method comprises doping a liquid precursor with dopants, depositing the doped liquid precursor on a surface (101a) of a substrate wafer (101) to create a doped film on the surface of the substrate wafer, creating a lightly diffused region (107) in the substrate wafer, heating the doped film on the substrate wafer, selectively curing the doped film on the surface of the substrate wafer to create cured and uncured regions of the doped film by patterned irradiation, and heating the cured doped film on the substrate wafer for converting the cured doped film into silicon compounds.    USE - The method is useful for diffusing dopants such as positive type impurities and negative type impurities into a substrate wafer for manufacturing a solar cell as a diffusion source (all claimed).    ADVANTAGE - The method is capable of effectively and simply diffusing the dopants into the substrate wafer thus rapidly increasing the efficiency and lifetime of the solar cell.    DETAILED DESCRIPTION - The method comprises doping a liquid precursor with dopants, depositing the doped liquid precursor on a surface (101a) of a substrate wafer (101) to create a doped film on the surface of the substrate wafer, creating a lightly diffused region (107) in the substrate wafer, heating the doped film on the substrate wafer, selectively curing the doped film on the surface of the substrate wafer to create cured and uncured regions of the doped film by patterned irradiation, heating the cured doped film on the substrate wafer for converting the cured doped film into silicon compounds, selectively oxidizing the cured doped film on the surface of the substrate wafer to create non-oxidized and oxidized uncured regions of the cured doped film on the surface of the substrate wafer, heating the oxidized doped film on the substrate wafer for selectively diffusing the dopants from the oxidized doped film into the substrate wafer, heating the non-oxidized and oxidized uncured regions of the doped film, diffusing the dopants from the non-oxidized and oxidized uncured regions of the doped film into the substrate wafer at different diffusion rates on the heating of the non-oxidized and oxidized uncured regions to produce differentiated sheet resistances on the surface of the substrate wafer, and etching the oxidized uncured regions of the doped film from the surface of the substrate wafer. The step of heating the doped film diffuses the dopants from the doped film into the substrate wafer. The diffusion of the dopants from the doped film into the substrate wafer comprises simultaneous creation of heavily diffused regions (106) and lightly diffused regions on the substrate wafer. The doped liquid precursor is selectively deposited on the substrate wafer for creating patterns of the doped film on the surface of the substrate wafer. The created patterns of the doped film on the surface of the substrate wafer enable the selective diffusion of the dopants into the substrate wafer after the heating of the doped film. The selectively cured doped film acts as a diffusion source for selectively diffusing the dopants into the substrate wafer. The deposition of the doped liquid precursor is performed by ink-jet printing, screen printing, condensing, pneumatic spraying, ultrasonic spraying, electrospraying, spraying by liquid ejection from an orifice, spraying by direct injection of droplets of the doped liquid precursor impinging on the substrate wafer, spin coating, roller coating, bar coating, curtain coating and dip coating. The liquid precursor comprises monomers, polymers, and oligomers of silicon and hydrogen. An INDEPENDENT CLAIM is included for a method for manufacturing a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a solar cell structure manufactured using a method for selectively diffusing dopants into a substrate wafer.    Substrate wafer (101)    Surface of the substrate wafer (101a)    Polycrystalline silicon (105)    Heavily diffused region (106)    Lightly diffused region (107)    Silicon nitride layer (108)    Metal contact. (109)