NOVELTY - A semiconductor wafer having semiconductor die(s) (124) containing contact pads, and conductive polymer (132,134) is deposited on contact pads on semiconductor wafer. An insulating layer (a) (154) is formed on a carrier, and semiconductor die is mounted on carrier with conductive polymer. The conductive polymer is heated to glass transition temperature, and encapsulant is deposited on semiconductor die and insulating layer (a). Interconnect structure is electrically connected through conductive polymer to contact pads on semiconductor die to obtain semiconductor device.    USE - Manufacture of semiconductor device (claimed) e.g. microcontroller, microprocessor, charge-coupled device, solar cell and digital micro-mirror device used in military, aircraft, automobile field, industries and office.    ADVANTAGE - The method efficiently provides semiconductor device having reduced size and power consumption performance.    DETAILED DESCRIPTION - A semiconductor wafer having several semiconductor die(s) with contact pads formed on the active surface of semiconductor die, is prepared. A conductive polymer is deposited on the contact pads on semiconductor wafer, and semiconductor die is separated. A carrier is provided, and insulating layer (a) is formed on the carrier. Openings are formed on insulating layer (a), and semiconductor die is mounted on the carrier with conductive polymer disposed in openings of insulating layer (a). The conductive polymer is heated to glass transition temperature, and an encapsulant is deposited on semiconductor die and insulating layer (a). The carrier is removed to expose the conductive polymer, and an interconnect structure is formed on semiconductor die, encapsulant, and conductive polymer. The interconnect structure is electrically connected through the conductive polymer to the contact pads on the semiconductor die to obtain semiconductor device. An INDEPENDENT CLAIM is included for semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of semiconductor device.    Semiconductor die (124)    Active surface (130)    Conductive layer (132,134)    Insulating layer (154)    Redistribution layer (156)