NOVELTY - A surface textured zinc oxide transparent conductive film with seed crystal layer comprises zinc oxide seed crystal layer or doped zinc oxide seed crystal layer with fixed crystal axis, and doped zinc oxide covering layer grown in the direction of fixed crystal axis on the seed crystal layer in the surface texturing structure. The doping element in the doped zinc oxide seed crystal layer or the doped zinc oxide covering layer is boron, alumina, gallium, indium, scandium, yttrium, silicon, germanium, tin, lead, titanium, zirconium and hafnium.    USE - Surface textured zinc oxide transparent conductive film is used for transparent electronics and photoelectric device.    ADVANTAGE - The surface textured zinc oxide transparent conductive film has high textured surface, light tripping effect, light capturing effect, improved performance and compact seed crystal layer, and is economically manufactured at high yield by simple process.    DETAILED DESCRIPTION - A surface textured zinc oxide transparent conductive film with seed crystal layer comprises zinc oxide seed crystal layer or doped zinc oxide seed crystal layer with fixed crystal axis, and doped zinc oxide covering layer grown in the direction of fixed crystal axis on the seed crystal layer in the surface texturing structure. The doping element in the doped zinc oxide seed crystal layer or the doped zinc oxide covering layer is boron, alumina, gallium, indium, scandium, yttrium, silicon, germanium, tin, lead, titanium, zirconium and hafnium. The total amount of doping element is 0.25-10 mol%. The thickness of seed crystal layer is 20-250 nm. The total thickness of seed crystal layer and covering layer is 600 nm to 3 mu m. The surface texturing structure is distributed on the same plane of several prism structures. The height from the bottom surface of single prism structure to the top point is 500 nm or less. An INDEPENDENT CLAIM is included for preparation of surface textured zinc oxide transparent conductive film with seed crystal layer, which involves preparing zinc oxide seed crystal layer or doped zinc oxide seed crystal layer with fixed crystal axis on substrate, and preparing doped zinc oxide covering layer on the zinc oxide seed crystal layer or the doped zinc oxide seed crystal layer along the fixed crystal axis through magnetron sputtering method.