NOVELTY - Forming high quality silicon material for photovoltaic devices, comprises: (a) transferring a raw silicon material in a crucible (20); (b) subjecting the raw silicon material in the crucible to thermal energy; (c) subjecting an exposed inner region of the melted material to an energy source; (d) removing one or more impurities from the melted material; (e) providing chemicals and gases required for purification and high-pressure damped gas mixtures; (f) outputting an inert gas through a nozzle region; and (g) providing a cover gas to maintain the melted material within the crucible.    USE - The method is useful for forming high quality silicon material for photovoltaic devices (claimed). The method is useful for purifying metallurgical silicon to produce raw materials for manufacturing single crystal silicon ingots and poly crystal silicon ingots for solar cells.    ADVANTAGE - The method provides silicon with high quality for solar cells, increasing demands for cleaner, more flexible production, and mass production capability in an economical manner.    DETAILED DESCRIPTION - Forming high quality silicon material for photovoltaic devices comprises: (a) transferring a raw silicon material in a crucible having an interior region; (b) subjecting the raw silicon material in the crucible to thermal energy to cause the raw silicon material to be melted into a liquid state; (c) subjecting an exposed inner region of the melted material to an energy source comprising an arc heater configured above the exposed region and spaced by a gap between the exposed region and a muzzle region of the arc heater to cause formation of determined temperature profile within a vicinity of an inner region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible; (d) removing one or more impurities from the melted material to form a higher purity silicon material in the crucible; (e) providing chemicals and gases required for purification and high-pressure damped gas mixtures through an independent injecting device; (f) outputting an inert gas through a nozzle region to cause a dimple region within a vicinity of the center region of the melted material; and (g) providing a cover gas to maintain the melted material within the crucible, where the crucible is provided within a vessel (10), the crucible is made of a quartz material, the quartz material is capable of withstanding a temperature of at least 1400 degrees C, the melted material has an exposed region bounded by the interior region of the crucible, the independent injecting device has a chemical and gas supply tube and a high-pressure gas supply tube, and the chemicals and gases required for purification is provided through the chemical and gas supply tube and the high-pressure damped gas mixtures is provided through the high-pressure gas supply tube.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of an apparatus.    Vessel (10)    Heater (11)    Decompression tube (12)    Exhaustion passage controlling cap (15)    Crucible. (20)