TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The wide bandgap material layer includes: a material having a low absorption coefficient with respect to blue light; and p+-silicon carbide, p+-silicon nitride or p+- silicon cyanide. The sensor further comprises a p+-silicon layer between the wide bandgap material layer and the substrate. The substrate includes a p--type silicon substrate. The substrate includes a pixel array region (200) and a peripheral circuit region, and the wide bandgap material layer is on the entire pixel array region, and is formed only on a portion of the pixel array region corresponding to a blue pixel. The wide bandgap material layer includes a p+-silicon carbide layer obtained by implanting carbon ions into a p+-silicon layer. The substrate is a p--type silicon substrate, the p+-silicon layer is on the substrate, and the wide bandgap material layer is formed by implanting carbon ions into one of the entire region of the p+-silicon layer and a partial upper region of the p+-silicon layer. The wide bandgap material layer is a laser annealed layer. The ARL includes: a first structure including a silicon nitride layer; a second structure including a buffer layer and a hafnium oxide layer; a third structure including a silicon oxide layer and a silicon oxynitride layer; a fourth structure including a buffer layer, a silicon nitride layer, and a titanium oxide layer; a fifth structure including a buffer layer, a hafnium oxide layer, and a titanium oxide layer; a sixth structure including a buffer layer, a slot plasma antenna (SPA) oxide layer, a silicon nitride layer, and a titanium oxide layer; a seventh structure including a buffer layer, an SPA oxide layer, a silicon nitride layer, and a titanium oxide layer; an eighth structure including a buffer layer, an SPA oxide layer, and a silicon nitride layer; a ninth structure including a buffer layer, an SPA oxide layer, a hafnium silicon oxide layer, and a titanium oxide layer; and a tenth structure including a buffer layer, a hafnium silicon oxide layer, and a titanium oxide layer. The sensor further comprises a passivation layer on the ARL. The photodiode includes a P-N junction diode structure through the entire thickness of the substrate, and the wide bandgap material layer is between an n-type semiconductor layer of the photodiode and the anti-reflective layer.