TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The covalent bond is formed using sulfur, selenium and tellurium. The n-type semiconductor is cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, cadmium-selenium sulfide, cadmium-selenium telluride, cadmium-tellurium sulfide, zinc-selenium sulfide, zinc-selenium telluride, zinc-tellurium-sulfide, cadmium-zinc sulfide, cadmium-zinc-selenide, cadmium-zinc-telluride, cadmium-zinc-selenium sulfide, cadmium-zinc-selenium telluride, cadmium-zinc-tellurium sulfide, cadmium-mercury-selenium sulfide, cadmium-mercury-selenium telluride, cadmium-mercury-tellurium sulfide, mercury-zinc-selenium sulfide, mercury-zinc-selenium telluride, mercury-zinc-tellurium sulfide, gallium nitride, gallium phosphide, gallium arsenide, gallium antimonide, indium phosphide, indium arsenide, indium-antimony alloy, gallium nitrophosphate, gallium-arsenic nitride, gallium-antimony nitride, gallium-arsenic phosphide, gallium-antimony indium phosphide, indium-arsenic-nitride, indium-antimony nitride, indium-arsenic phosphide, indium-antimony phosphide, gallium-aluminum-nitrophosphate, gallium-aluminum-arsenic nitride, gallium-aluminum-antimony nitride, gallium-aluminum-arsenic phosphide, gallium-aluminum-antimony phosphide, gallium-indium-antimony-phosphide, indium-aluminum nitride, indium-aluminum-arsenic nitride, indium-aluminum-antimony nitride, indium-aluminum-arsenic phosphide, indium-aluminum-antimony phosphide, lead sulfide, lead selenide, lead telluride, lead-selenium sulfide, lead-selenium telluride, lead-tellurium sulfide, tin-lead sulfide, tin-lead selenide, tin-lead telluride, tin-lead-selenium sulfide, tin-lead-selenium telluride, tin-lead-tellurium sulfide and/or silicon, preferably cadmium sulfide, cadmium selenide and/or cadmium telluride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The coupling region containing organic group of formulae: -R0-X-, or -X-. The organic semiconductor molecule portion interacts with organic semiconductor molecule portion adjacent organic semiconductor molecule. The interaction is hydrophobic interaction, electrostatic interaction, coordinate bond, Vander Waals force, hydrogen bond, charge transfer interaction, antigen antibody reaction and/or covalent bond. The organic semiconductor molecule contained in organic semiconductor molecule portion is anthracene, naphthacene, pentacene or thiophene-type compounds of formulae (I) and (II). The p-type organic semiconductor molecule has thiophene-type structure of formulae (III) and (IV), and anthracene-type structure of formula (V), naphthacene-type structure of formula (VI), pentacene-type structure of formula (VII). At least one of organic semiconductor molecule, which is capable of self-arranging between organic semiconductor molecules, is of formulae (VIII)-(XII).R0,R1-R4=group which capable of interacting with 1-20C alkylene or adjoining t-type organic semiconductor molecule;X=sulfur, selenium or tellurium;andn=0-10.(i) When R0 is directly couples with organic semiconductor molecule portion, then X is directly couples with inorganic semiconductor; and (ii) when R0 does not exists, then X is directly couples with organic semiconductor molecule and inorganic semiconductor.