NOVELTY - Method (I) of forming a back contact on a thin film photovoltaic device comprises: applying an anisotropic conductive paste to a p-n junction defined by a n-type thin film layer and a p-type thin film layer; curing the anisotropic conductive paste to form an anisotropic conductive layer (22) on the p-n junction; and applying a metal contact layer on the anisotropic conductive layer.    USE - The method is useful in forming a back contact on a thin film photovoltaic device.    ADVANTAGE - The method provides a photovoltaic device having improved energy conversion efficiency and device lifetime by providing improved contact between the back contact and the p-type layer.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method (II) of forming a back contact on a thin film photovoltaic device or a cadmium telluride based thin film photovoltaic device comprising: (i) forming a resistive transparent buffer layer on transparent conductive oxide layer, where the transparent conductive oxide layer is on a glass substrate; (ii) forming a cadmium sulfide layer on the resistive transparent buffer layer; (iii) forming a cadmium telluride layer on the cadmium sulfide layer; (iv) forming a first isolation scribe (21) through the p-n junction or the cadmium telluride layer to an underlying glass substrate to form isolated cells; (v) forming a series connecting scribe (25) through the p-n junction or the cadmium telluride layer to a transparent conductive oxide layer; (vi) applying an anisotropic conductive paste to the p-n junction or the cadmium telluride layer and filling the first isolation scribe to form isolated cells in the device and filling the series isolation scribe to electrically connect adjacent cells to each other in series in the series isolation scribe; (vii) curing the anisotropic conductive paste to form an anisotropic conductive layer on the p-n junction or the cadmium telluride layer; and (viii) forming a second isolation scribe (26) through the metal contact layer, the anisotropic conductive layer and the p-n junction or the cadmium telluride layer.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic of a top view of the cadmium telluride thin film photovoltaic device.    First isolation scribe (21)    Anisotropic conductive layer (22)    Conductive particles (23)    Series connecting scribe (25)    Second isolation scribe (26)