NOVELTY - Preparation of metal electrode comprises sensitizing black silicon surface using sensitizing liquid with tin chloride; activating sensitized black silicon surface through activating liquid; depositing transitional layer at black silicon surface that is pre-treated before chemical plating; drying transitional layer; depositing metal electrode layer on transitional layer by evaporation of sputtering; annealing deposited metal layer; and photo-etching metal layer and transitional layer into electrode shape.    USE - Preparation of metal electrode used for silicon photoelectric detector or solar cell.    ADVANTAGE - The method improves provides improves force between metal electrode and black silicon surface, and lowers contact resistance. It has easy steps and low production cost. The metal electrode provides silicon photoelectric detector or solar cell with improved apparatus efficiency and response speed.    DETAILED DESCRIPTION - Preparation of metal electrode comprises sensitizing black silicon surface using sensitizing liquid with tin chloride to adsorb tin on black silicon surface; activating sensitized black silicon surface through activating liquid with palladium chloride; forming activating center at black silicon surface after reducing palladium by tin; depositing transitional layer at black silicon surface performed with pre-treatment before chemical plating through chemical plating, in which transitional layer is made of nickel-phosphorus alloy, nickel boron alloy, copper metal, nickel-copper phosphorus three-element alloy or nickel-copper-boron three-element alloy, and has thickness 0.5-10 mu m; drying transitional layer; depositing metal electrode layer on transitional layer by evaporation of sputtering; annealing deposited metal layer; and photo-etching metal layer and transitional layer into form electrode shape to prepare electrode.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a process for preparing metal electrode (Drawing includes non-English language text).