TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The method further comprises: preparing the inorganic particle by contacting a particle comprising the phosphorus containing silicon compound with water to remove phosphorus from the surface of the inorganic particle, where the water is a liquid, a vapor, or a supercritical fluid, and contacting the particle comprising the phosphorus containing silicon compound with water or an organic solvent to clean the particle; and after heat treating the semiconductor substrate, disposing a p-type doping paste, which is different from the n-type doping paste, on a second surface of the semiconductor substrate, and then heat treating the semiconductor substrate. The disposing step comprises disposing the n-type doping paste on an entire surface of or a portion of a surface of the semiconductor substrate by screen printing. The step of heat treating the semiconductor substrate onto which the n-type doping paste is disposed comprises heat treating at a first temperature to remove the organic vehicle, and then heat treating at a second temperature, which is higher than the first temperature, to dope the semiconductor substrate with an n-type impurity. The n-type doping paste and the p-type doping paste are disposed on a same side of the semiconductor substrate, and the n-type doping paste and the p-type doping paste are alternately disposed. The first temperature is 100-600 degrees C. The second temperature is 700-1100 degrees C. The emitter layer is disposed on an entire surface or on a portion of a surface of the semiconductor substrate.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The concentration of phosphorus decreases in a direction from a center of the inorganic particle. The phosphorus containing silicon compound comprises a phosphosilicate crystal, and/or a phosphosilicate glass. The phosphorus-containing silicon compound comprises a phosphosilicate glass having a structure of formula (xSio2-yP2O5-zMO). The inorganic particle comprises a phosphorus rich region (12) located at a center of the inorganic particle, and a silicon rich region (11) located at the surface of the inorganic particle, where the silicon rich region has a ratio of phosphorus to silicon (10b) which is less than a ratio of phosphorus to silicon of the phosphorus rich region. The inorganic particle has particle size of 0.5-50 mu m.x, y = greater than 0;z = greater than or equal to 0; andM = metal.Preferred Composition: (I) further comprises a conductive material, and the emitter layer and the electrode are integratedly formed using the doping paste. The inorganic particle and the organic vehicle are present at 1-80 wt.% and 20-99 wt.% respectively, based on a total weight of the doping paste. EXAMPLE - None given.