NOVELTY - A semiconductor nanowire device comprises: a substrate (1010) having at least one semiconductor nanowire of several semiconductor nanowires formed with that, where the semiconductor nanowire comprises at least one first quantum dot (1040) disposed within a second quantum dot (1045) within a predetermined portion of the semiconductor nanowire and formed by a self-organization of the semiconductor nanowire during its growth.    USE - As semiconductor nanowire device (claimed) such as self-organizing dot-within-a-dot nanowire and dot-within-a-dot-within-a-well nanowire structures, solid state light sources and full solar spectrum solar cells.    ADVANTAGE - The semiconductor nanowire device can be prepared by method that provides defect free nanowires and associated structures for group IIIA-nitrides without using foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabricating semiconductor nanowire devices involving: initiating the growth of at least one wurtzite semiconductor structure of wurtzite semiconductor structures on a substrate, where the initiation achieved by providing for the wurtzite semiconductor structure at least one nanoscale droplet of nanoscale droplets of a first predetermined group IIIA element constituent of the wurtzite semiconductor on the surface of the substrate and absent both a foreign catalyst and other constituent elements of the wurtzite semiconductor; growing from the wurtzite semiconductor structure a nanowire by growing a series of semiconductor materials in a predetermined sequence atop the wurtzite semiconductor where a predetermined portion of the series of semiconductor materials includes at least of a predetermined second group IIIA element and a predetermined group five A (VA) element; where growing the nanowire comprises forming at least one first quantum dot disposed within a first quantum well by a process of self-organization within a predetermined portion of the nanowire.    DESCRIPTION OF DRAWING(S) - The figure shows depicts a nanowires light source employing nanowires featuring dot-within-a-dot-in-a-nanowire features.    Dot-within-a-dot-in-a-nanowire light source (1000)    Substrate (1010)    GaN barrier (1030)    First quantum dot (1040)    Second quantum dot (1045)