NOVELTY - A nanometer structure flexible film preparation method involves selecting nano pore membrane, 108-1010 nm flexible aluminum foil with holes 5-200 nm and adhering nano pore membrane on soft aluminum foil substrate nano pore membrane, followed by making electrolyte, where the electrolyte is prepared by mixing cadmium acetate, thiourea (0.01-0.1M) and ammonium acetate (0.003-0.03M) and adjusting pH ranges from 10.5-11. The current density is 0.5-1.5mA/cm2 and the electrolytic bath is set at 70-80 degrees C for depositing to form cadmium sulfide layer in the hole of nano pore membrane.    USE - Method for preparing nanometer structure flexible film for solar cell.    ADVANTAGE - The method enables preparing a nanometer structure flexible film with better photon-generated carrier transmission and increased photoelectric conversion efficiency in a cost-effective manner.    DETAILED DESCRIPTION - A nanometer structure flexible film solar cell preparation method involves selecting nano pore membrane, 108-1010 nm flexible aluminum foil with holes 5-200 nm and adhering nano pore membrane on soft aluminum foil substrate nano pore membrane, followed by making electrolyte, where the electrolyte is prepared by mixing cadmium acetate (0.001-0.01M), thiourea (0.01-0.1M) and ammonium acetate (0.003-0.03M) and adjusting pH ranges from 10.5-11. The current density is 0.5-1.5mA/cm2 and the electrolytic bath is set at 70-80 degrees C for depositing for 15-30 minutes to grow cadmium sulfide layer in the hole of nano pore membrane by using ammonia. The obtained film layer as anode is put in a zinc nitrate electrolyte bath at 60-70 degrees C and deposited for 30-60 minutes to form a zinc oxide layer, where the current density is 0.1-1.0 mA/cm2. The obtained zinc oxide layer is placed into evaporation chamber, followed by raising the temperature to 250-300 degrees C to form indium gallium selenium compound of ((In7Ga3)2Se3) preset layer. The obtained preset layer is heated at 400-450 degrees C for 1-5 hours, and the heat is preserved for 0.1-1 hours to form a copper film, followed by reducing the temperature to 250-300 degrees C and continuously evaporating for 0.1-5 hours to generate 0.1-1.5 mu m indium gallium selenium compound of ((In7Ga3)2Se3) as the p type CIGS absorber layer. The obtained layer is deposited on tin indium oxide transparent conductive material or aluminum doped zinc oxide by magnetic control sputtering to obtain nano structure of a flexible thin film.