NOVELTY - The cell has a semiconductor substrate (10) including a p-type semiconductor portion (10A) and an overlying n-type semiconductor portion (10B), where an exposed surface of the p-type semiconductor portion defines a back side surface of the substrate. A back side surface metallic film (16) is located on the back side surface of the substrate. A patterned anti-reflective coating includes grid pattern located on a front side surface (12) of the substrate, where the coating includes metallic filled pin holes (19'). A front side surface metallic film (22) is located within the grid pattern.    USE - Photovoltaic solar cell.    ADVANTAGE - The cell allows as-deposited antireflective coating composition to be subjected to post deposition treatment so as to improve properties of a layer or surface of the coating. The cell allows the coating to include anti-reflective material that can reduce reflection from the surface of substrate. The cell allows a textured/roughened surface to be used in solar cell applications so as to increase efficiency of light absorption. The cell allows evaluating effectiveness of substrate cleanness and quantity of pin holes in the coating of the cell.    DETAILED DESCRIPTION - The front side surface of the semiconductor substrate is a non-textured or textured front side surface. The semiconductor substrate is made of silicon, germanium, silicon germanium, silicon carbide, silicon germanium carbide, gallium arsenide, gallium nitride indium arsenide, indium phosphide, cadmium telluride, copper indium gallium selenium sulfide, silicon and III/V and II/VI compound semiconductor.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure after forming a front side surface metallic film within grid pattern.    Semiconductor substrate (10)    P-type semiconductor portion (10A)    N-type semiconductor portion (10B)    Front side surface (12)    Back side surface metallic film (16)    Metallic filled pin hole (19')    Front side surface metallic film (22)