NOVELTY - The solar cell comprises a light absorbing layer (110), a semiconductor layer (120) disposed on a first surface of the light absorbing layer, a first electrode (170) disposed on the semiconductor layer in a first direction of the semiconductor layer, a first passivation layer (140) disposed on a second surface of the light absorbing layer, a second passivation layer (150) disposed on the first passivation layer in a second direction that is opposite to the first direction of the semiconductor layer, and a contact hole (160) that is disposed in the first and second passivation layers.    USE - Used as a solar cell such as crystalline wafer type solar cell and a thin film type solar cell.    ADVANTAGE - The solar cell can be efficiently manufactured with improved electrical characteristics, good heat stability, long lifespan, excellent junction characteristics and increased output current and fill factor characteristics.    DETAILED DESCRIPTION - The solar cell comprises a light absorbing layer (110), a semiconductor layer (120) disposed on a first surface of the light absorbing layer, a first electrode (170) disposed on the semiconductor layer in a first direction of the semiconductor layer, a first passivation layer (140) disposed on a second surface of the light absorbing layer, a second passivation layer (150) disposed on the first passivation layer in a second direction that is opposite to the first direction of the semiconductor layer, a contact hole (160) that is disposed in the first and second passivation layers and exposes a portion of the light absorbing layer, a second electrode disposed on the second passivation layer in the second direction of the second passivation layer and connected with the light absorbing layer through the contact hole, an impurity layer disposed in the portion of the light absorbing layer exposed by the contact hole, and an anti-reflective layer (130) formed on the semiconductor layer in the first direction of the semiconductor layer. The second passivation layer is made of a compound containing carbon. A content of the carbon in the second passivation layer is 6-12 at.%. The semiconductor layer is doped with N-type dopants. The first electrode is formed directly on the anti-reflective layer. An INDEPENDENT CLAIM is included for a method for manufacturing a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a solar cell.    Light absorbing layer (110)    Semiconductor layer (120)    Anti-reflective layer (130)    First passivation layer (140)    Second passivation layer (150)    Contact hole (160)    First electrode. (170)