NOVELTY - The device has a conducting layer (2) provided with a surface (2b) facing the device. The surface is provided with valleys formed between two elementary surfaces, where a radius of curvature of the device is lesser than 100nm. A microcrystalline silicon elementary photoelectric device (6) is provided with a p-type layer on an incoming light side, where average thickness of the elementary photoelectric device is of 15-30nm. Another elementary photoelectric device (10) is placed between the former elementary photoelectric device and a top electrode layer.    USE - Multi-junction photoelectric device for a hydrogenated amorphous silicon/microcrystalline silicon double-junction solar cell.    ADVANTAGE - The device can improve performance of thin film silicon solar cells onto textured substrates by developing a cell structure for limiting impact of local low-quality regions onto solar cell electrical performance so as to achieve better light trapping of a p-type silicon oxide layer that reduces influence of cracks/bad diodes on electrical characteristics of the solar cell, thus achieving high efficiencies by allowing for better light trapping without losing electrical characteristics of the cell. The device achieves high efficiency cells without using complex re-structuring of the textured interface so as to allow for reduced densities of local low-quality diodes, thus achieving high improvement in the cell and module efficiency, and hence achieving reproducibility with high roughness of the conducting layer and maintaining electrical field throughout the device.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for producing a multi-junction photoelectric device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a hydrogenated amorphous silicon/microcrystalline silicon double-junction solar cell.    Conducting layers (2, 8)    Surface (2b)    Substrate (4)    Microcrystalline silicon elementary photoelectric devices (6, 10)    Intermediate layer (14)