TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layer: The crystal orientation of the semiconductor layer or base material, and the crystal orientation of the dopant injection layer are same. The concentration of the dopant is more than 1x 1020 atoms/cm3 in a depth of 0.1 mu m from the surface of the dopant injection layer. The concentration of dopant is 0.1- mu m-deep 1/10 or less in a depth of 0.3 mu m from the surface of the dopant injection layer. The semiconductor elements are silicon, germanium, or their mixture. The dispersion is applied by printing method or spin coating method. The crystallinity degree of the particles is 40% or less. The average primary particle diameter of the particle is 30 nm or less. The dopant is chosen from boron, aluminum, gallium, indium, titanium, phosphorus, arsenic, antimony, or their mixture. The concentration of particles is more than 1x 1020 atoms/cm3. An electrode is formed on the dopant injection layer (52). The dopant injection layer is used for forming selective emitter layer or back-contact layer, back surface electric field layer or surface electric field layer. The desorption gas is obtained from silane compound, organic solvent, and their mixture. The non-sintered silicon particle film has thickness of 50-2000 nm. The silicon particle is obtained by laser-thermo decomposition method. Preferred Method: A secondary dopant injection layer is further formed on another specific portion. The baking is carried out at 500 degrees C or more and 800 degrees C or less. The semiconductor-silicon film is not subjected to heat-processing at more than 1000 degrees C. Light is irradiated to non-sintered silicon particle film, or heat is applied. Light irradiation is performed using a laser. Sintering is performed in a non-oxidizing atmosphere. The semiconductor-silicon film contains elongated silicon particles. At least one portion of the elongated silicon particle has a short axis diameter of 100 nm or more and aspect ratio of more than 1.2. The average primary particle diameter of the silicon particle is 100 nm or less. The non-sintered semiconductor-silicon film has thickness of 50-2000 nm. The height of the convex portion of the composite silicon layer is 100 nm or less. The thickness of the amorphous-silicon layer is 300 nm or less. The thickness of the silicon particle layer is 300 nm or less. The average primary particle diameter of the silicon particle is 100 nm or less. The surface of the base material is made of carbide, nitride, carbonitride, and their mixture, preferably silicon carbide, silicon nitride, silicon carbonitride, graphite, and their mixture. The base material is obtained from molten silicon. The contact angle of surface layer is 70 degrees or less. The average primary particle diameter of the silicon particle is 100 nm or less. The wavelength of the laser is 600 nm or less. The thickness of the semiconductor-silicon film is 50-500 nm.    TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The base material contains polymer material. The glass transition temperature of the polymer material is 300 degrees C or less. The average primary particle diameter of the silicon particle is 100 nm or less. The carrier mobility of the semiconductor-silicon film is more than 0.1 cm2/V.second. The on-off ratio of the semiconductor-silicon film is 102 or more. The light irradiation is performed using pulse-form light. The irradiation energy of pulse-form light is 15-250 mJ/(cm2.shot). The frequency of irradiation of the pulse-form light is 5-100 times. The irradiation time of the pulse-form light is 200 nanoseconds/shot or less. The wavelength of the said laser is 600 nm or less.