NOVELTY - The method involves providing a wafer-level substrate. A semiconductor die (124) is mounted over the substrate. An encapsulant is deposited over the semiconductor die and the substrate. A trench is formed through the encapsulant around the semiconductor die. The trench is aligned with a conductive via. A shielding layer (186) conforming to the encapsulant and extending to the substrate is formed. A portion of the substrate is removed to expose the via. An interconnect structure is formed over the substrate opposite the semiconductor die, where the structure is connected to the via.    USE - Method for making an integrated flipchip semiconductor device for performing function in fields and applications. Uses include but are not limited to a micro-controller, microprocessor, charged-coupled device (CCD), solar cell and digital micro-mirror device (DMD), for performing signal processing, high-speed calculation, transmitting and receiving electromagnetic signal, controlling stand-alone electronic device e.g. cellular phone, personal digital assistant (PDA), digital video camera (DVC), graphics card and network interface card, transforming sunlight to electricity and creating visual projection for a TV display in entertainment fields, communications fields, power conversion fields, network fields, computers fields, consumer product fields, military applications, aviation applications, automotive applications, industrial controllers applications and office equipment fields.    ADVANTAGE - The method enables the semiconductor device to commonly use a metal shielding layer mounted to the encapsulant formed over the semiconductor die to reduce electromagnetic interference (EMI) and radio frequency interference (RFI), so that the shielding layer is electrically connected through a build-up interconnect structure to a low impedance ground point to dissipate EMI and RFI energy. The method enables the semiconductor device to provide a short electrical conduction path from active devices on the semiconductor die to conduction tracks on printed circuit board (PCB) to reduce signal propagation distance, lower capacitance and improve circuit performance. The method enables the semiconductor die to be mechanically and electrically connected directly to the PCB using flipchip style first level packaging without an intermediate carrier. The method enables providing bumps to be reflowed to improve electrical contact to a conductive layer. The method enables the encapsulant to be deposited over a package for environmental protection by preventing moisture and particles from entering the package and contaminating die or bond wires. The method enables utilizing contact pads formed over a surface of the PCB using metal deposition process such as electrolytic plating or electroless plating, to prevent oxidation in the device. The method enables combining semiconductor packages over a single substrate, so that the electronic device can be manufactured using cheaper components and streamlined manufacturing process, thus manufacturing the semiconductor device that does not fail in an inexpensive manner for consumers.    DETAILED DESCRIPTION - The semiconductor die is a flipchip type die, wire-bonded die and a conductive through silicon via (TSV) die. The shielding layer is made of conductive paste and non-metal material i.e. carbon-black or aluminum flake.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of EMI and RFI shielding layers extending into through silicon via an interposer.    Semiconductor die (124)    Electrically conductive layer (132)    Electrically conductive layer or redistribution layer (144)    Shielding layer (186)    Bumps (200)