NOVELTY - Method for electroplating copper, comprises: (a) forming an electrochemical cell (115) including at least one surface (112) of a substrate (110), an anode (106), and an electroplating solution (104)in contact with the at least one surface and the anode, where the electroplating solution includes at least one suppressor agent; and (b) electroplating copper onto the at least one surface under conditions in which a ratio of a cathode current density at the at least one surface to an anode current density at the anode is at least 20.    USE - The method is useful: for electroplating copper which is used in electrical interconnects for integrated circuits, solar cells, and to form through-substrate interconnects or other metallization structures in integrated circuits and other electronic devices; and for forming many different types of electrically conductive structures other than copper bumps or pillars.    ADVANTAGE - The method: provides electroplating of copper that has substantially-free of dendrites, exhibits high-degree of (111) crystallographic texture, which is more resistant to stress-induced voiding than other crystallographic textures; utilizes suppressor agent that improves surface roughness, ductility, brightness, and electrical conductivity; and provides electroplating of high-quality copper film at high-deposition rate.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for method for forming porous anodic film, comprising: forming the electrochemical cell including the cathode, a consumable copper-containing anode, and an electroplating solution in contact with the cathode and the consumable copper-containing anode; and forming a porous anodic film on the consumable copper-containing anode by generating a current through the electrochemical cell for a time to pass at least 1000 coulombs per liter of the electroplating solution through the electroplating solution.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of the electroplating apparatus used for electroplating copper onto at least one surface of the substrate.    Electroplating solution (104)    Anode (106)    Substrate (110)    Surface (112)    Electrochemical cell (115)