NOVELTY - The method comprises forming three-dimensional heat conducting nanowires on a first side of a wafer, depositing semiconductor structures on a second side of the wafer, depositing a conductive filler between the nanowires (36), planarizing the nanowires and the conductive filler (38), patterning and etching cavities on the first side of the wafer (30), depositing an interface material on the cavities (32), and forming nanotubes on the cavities (34). The planarizing step comprises performing chemical-mechanical planarization.    USE - The method is useful for fabricating a semiconductor device such as: a LED; a flip-flop; an optical data storage device such as nano-head disk drive and an on-chip data or off-chip storage device for a processor chip; a package for integrated circuit; a MOSFET; an optical interconnection system; a wireless communication device such as a nano antenna; a memory device including a single-molecule magnets memory device and an optical storage molecules memory device; a polycrystalline solar cell; nano-based image sensors including charge coupled devices and complementary metal oxide semiconductor sensors; a nano display device such as an electronic display; chemical and biological sensors; a photon sensing device; and a magnet data storage device.    ADVANTAGE - The method is capable of simply, economically and efficiently fabricating the semiconductor device with less power consumption, high speed and sensitivity, long term data storage capacity, compact size, increased thermal reliability and compatibility and high performance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a method for fabricating a heat remover; and    (2) a semiconductor device.    DESCRIPTION OF DRAWING(S) - The diagram shows a flow chart of a method for fabricating a semiconductor device.    Patterning and etching cavities on first side of wafer (30)    Depositing interface materials on cavities (32)    Growing nanotubes on cavities using chemical vapor deposition (34)    Depositing conductive filler between nanowires (36)    Planarizing nanowires and conductive filler. (38)