NOVELTY - Preparing one-dimensional graphene/semiconductor nanowire composite photoanode, comprises preparing spinning solution, mixing the spinning solution, high molecular polymer, ethanol solution, solvent and acid additive, preparing a semiconductor graphene composite fiber, injecting the spinning solution into an injector, cleaning the fiber, performing electro-spinning process and ultrasonic dispersing process on the fiber, doping 2.5-20 wt.% of graphene on a P25 light anode film, and coating indium tin oxide on the fluorine-doped tin oxide conductive glass.    USE - The one-dimensional graphene/semiconductor nanowire composite photoanode is useful in a solar battery.    ADVANTAGE - The method provides one-dimensional graphene/semiconductor nanowire composite photoanode with high quality and low interface resistance in a simple and cost-effective manner, thus improving durability of the solar battery.    DETAILED DESCRIPTION - Preparing one-dimensional graphene/semiconductor nanowire composite photoanode, comprises: (a) preparing semiconductor graphene composite fiber spinning solution with a concentration of 0.01-0.12 mg/ml, and mixing the spinning solution, high molecular polymer, semiconductor precursor oxide ethanol solution, solvent and acid additive, where the high molecular polymer is present at 10-60 mg/ml in a solution system, the semiconductor precursor ethanol solution comprises isopropyl titanate, zinc acetate or aluminum acetylacetonate with a concentration of 0.1-0.8 g/ml, the high molecular polymer is polyethylene pyrrolidone, the solvent is ethanol or water, and acid additive is glacial acetic acid; (b) preparing a semiconductor graphene composite fiber using electrostatic spinning technology, injecting the spinning solution into a micro sample injector under action of an electrostatic field, and cleaning the composite nanofiber using an aluminum foil, where the aluminum foil has a static spinning voltage of 14-20 kV, flow speed of 0.1-1 ml/hour, temperature of 10-20 degrees C, and humidity of 10-45%; (c) performing the electro-spinning process on the composite nanofiber using an inert gas at 400-1200 degrees C for 3-5 hours, and performing an ultrasonic dispersing process on the composite nano fiber using the solvent; and (d) doping 2.5-20 wt.% of one-dimensional semiconductor nano graphene on a P25 light anode film, and coating indium tin oxide on the fluorine-doped tin oxide conductive glass at 180-600 degrees C under the protection of inert gas.