NOVELTY - The process comprises applying a conductive metal paste over a bottom set of thin conductive metal collector lines and to holes of an n-type silicon wafer to form a continuous metallization, which comprises a top set of thin conductive metal collector lines and a metallization of the inside of the holes, drying the applied conductive metal paste, and firing the dried conductive metal paste, where the wafer reaches a peak temperature of 700-900 degrees C. The n-type silicon wafer is provided with: holes forming vias between a front-side and a back-side of the wafer; and a p-type emitter.    USE - The process is useful for the production of a metal-wrap-through silicon solar cell.    ADVANTAGE - The process ensures efficient and easy production of the metal-wrap-through silicon solar cell with long service life.    DETAILED DESCRIPTION - The process comprises applying a conductive metal paste over a bottom set of thin conductive metal collector lines and to holes of an n-type silicon wafer to form a continuous metallization, which comprises a top set of thin conductive metal collector lines and a metallization of the inside of the holes, drying the applied conductive metal paste, and firing the dried conductive metal paste, where the wafer reaches a peak temperature of 700-900 degrees C. The n-type silicon wafer is provided with: holes forming vias between a front-side and a back-side of the wafer; a p-type emitter extending over the entire front-side and the inside of the holes; an anti-reflective coating layer on the front-side that leaves out the inside of the holes; and a front-side metallization that is present in the form of the bottom set of thin conductive metal collector lines. The top set of thin conductive metal collector lines superimposes the bottom set of thin conductive metal collector lines. The conductive metal paste has no or only poor fire-through capability, comprises: 10-45 wt.% of an organic vehicle; 50-92 wt.% of a particulate electrically conductive metal consisting of silver; and 0.25-8 wt.% of a glass frit that consists of lead-free glass frits with a softening point temperature of 550-611 degrees C and lead-containing glass frits with a softening point temperature of 571-636 degrees C, is applied as a conductive metal layer or as a conductive metal plug, and is applied by printing. The holes have a narrow rim around their front edges left out by the anti-reflective coating layer. The firing step is performed as cofiring together with a back-side silver paste that is applied to the back-side to form silver back collector contacts. An INDEPENDENT CLAIM is included for a metal-wrap-through silicon solar cell.