NOVELTY - Manufacturing a semiconductor device involves introducing an organosilicon precursor, an oxidant and at least one porogen into a chamber comprising a substrate (10), thereby forming a porogen-containing dielectric layer on the substrate; removing at least a portion of the at least one porogen from the porogen-containing dielectric layer to form a porous, low-dielectric constant (k) dielectric layer (40); and optionally forming a metal interconnection on the substrate, where the oxidant is introduced into the chamber at a flow rate that is less than or equal to 0.7 times that of the organosilicon precursor.    USE - For manufacturing a semiconductor device (claimed) such as single discrete device and integrated circuit device; for forming a diode such as Gunn diode, IMPATT diode, laser diode, light-emitting diode, PIN diode, Schottky diode, Tunnel diode or Zener diode; photocell; solar cell; transistor such as bipolar transistor, Darlington transistor, field-effect transistor, IGBT transistor or uni-junction transistor; Hall effect sensor; charge-coupled device; microprocessor or memory device such as random access memory or read-only memory.    ADVANTAGE - The method uses improved porous and/or low-k dielectric material having improved mechanical strength and/or dielectric properties for manufacturing semiconductor device. The method effectively uses improved insulating layers with reduced capacitance.    DETAILED DESCRIPTION - Manufacturing a semiconductor device involves introducing an organosilicon precursor, an oxidant and at least one porogen into a chamber comprising a substrate (10), thereby forming a porogen-containing dielectric layer on the substrate; removing at least a portion of the at least one porogen from the porogen-containing dielectric layer to form a porous, low-dielectric constant (k) dielectric layer (40); and optionally forming a metal interconnection on the substrate, where the oxidant is introduced into the chamber at a flow rate that is less than or equal to 0.7 times that of the organosilicon precursor, and where the organosilicon precursor is of formula R1R2R3-Si-(CH2)n-Si-R4R5R6 (I).    R1-R6=H, methyl or alkoxy;    n=1-5.    DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional view illustrating a method of forming a porous and/or low-k dielectric layer.    Substrate (10)    Porous and/or low-k dielectric layer (40)    Pore (50)    UV irradiation (60)