NOVELTY - Fabricating group III-nitride semiconductor film involves depositing/growing group III-nitride semiconductor film in semiconductor light absorbing or light emitting device structure; and growing textured or structured surface of semiconductor film in situ with growth or deposition of semiconductor film, by controlling growing of group III-nitride semiconductor film to obtain texture of textured surface, or at least one structure of structured surface, that increase output power of light from the light emitting device, or increase absorption of light in the light absorbing device.    USE - For fabricating group III-nitride semiconductor film used in solar cell, light emitting diode device (claimed).    ADVANTAGE - The group III-nitride semiconductor film having textured surface does not contain damage or contains less damage, as compared to damage formed by etching to create etched textured or structured surface of group III-nitride semiconductor film in light absorbing or light emitting device. By controlling growing of group III-nitride semiconductor film to obtain texture of textured surface, or at least structure of structured surface, increases output power of light from light emitting device or increases absorption of light in light absorbing device. The method uses photo electrochemical (PEC) etching of Nitrogen-face nitride based materials and devices. In order to complete this texturing process, substrate material must be removed after device is deposited. Subsequently, PEC etching must then be performed on the N-face of the nitride based device. The method allows for precise control of texturing features, such as shape, height and density based on process conditions, and benefits the elimination of further texturing techniques or steps, thus reduces overall manufacturing cost and improves product yield. The realization of textured group III-V material improves performance of light emitting diode (LED) and solar cells devices. Using textured material for LED or solar cell device allows for enhanced extraction or collection of light, in comparison to devices without use of textured material. The method can also achieve textured surface for use in electronic devices, e.g. transistors or high electron mobility transistors (HEMTs).    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for light emitting/light absorbing device comprising group III-nitride semiconductor film grown or deposited in semiconductor light absorbing/light emitting device structure; and texture or at least structure grown on surface of group III-nitride nitride semiconductor film to form textured or structured surface, where texture or structures of structured surface increase an output power of light from light emitting device, or increase absorption of light in light absorbing device.    DESCRIPTION OF DRAWING(S) - The figure shows flowchart of method of fabricating group III-nitride semiconductor film.