TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The crystals are placed on the handle substrate by means of a pick and place machine, a robot or a die attach tool. The method of growing a large-area crystal further comprises: utilizing the merged crystal as a substrate for a semiconductor structure; arranging the semiconductor structure so that the active region of the semiconductor structure lies within a single domain of the merged crystal; and utilizing the merged crystal as a seed crystal for bulk crystal growth. Preferred Components: The crystals have a hexagonal crystal structure or a cubic crystal structure. The crystals comprise cubic boron nitride, boron phosphide, boron arsenide, aluminum phosphide, aluminum arsenide, aluminum antimonide, beta -silicon carbide, gallium phosphide, gallium arsenide, gallium antimonide, indium phosphide, indium arsenide, zinc sulfide, zinc selenide, cadmium sulfide, cadmium selenide, cadmium telluride, cadmium zinc telluride or mercury cadmium telluride. The crystals comprise zinc oxide, zinc sulfide, silver iodide, cadmium sulfide, cadmium selenide, 2H-silicon carbide, 4H-silicon carbide or 6H-silicon carbide. The crystals comprise regions having a concentration of threading dislocations higher than 106 cm-2 separated by regions having a concentration of threading dislocations lower than 106 cm-2. The two nitride crystals comprise aluminum-indium-gallium nitride of formula (AlxInyGa(1-x-y)N). The crystals have a dislocation density below 106 cm-2, preferably 104 cm-2. At least one of the two crystals has an ion-implanted/damaged region. The surfaces of the crystals being wafer-bonded to the handle substrate have a crystallographic orientation within one degree of (0 0 0 1), (0 0 0 -1), (1 0 -1 0), (1 0 -1 plus minus 1), (2 0 -2 1) and (1 1 -2 2). The handle substrate is sapphire, aluminum oxide, mullite, silicon, silicon nitride, germanium, silicon germanium, diamond, gallium arsenide, silicon carbide, magnesium aluminate spinel, zinc oxide, indium phosphide, gallium nitride, indium nitride, gallium aluminum indium nitride or aluminum nitride. The handle substrate is a glass and comprises an oxide of at least one of materials including silicon, germanium, tin, lead, boron, aluminum, gallium, indium, thallium, phosphorus, arsenic, antimony, lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, strontium, barium, yttrium, titanium, zirconium, hafnium, manganese, zinc or cadmium. At least one of the handle substrate and the crystal further comprises an adhesion layer, where the adhesion layer comprises at least one of silicon dioxide, germanium dioxide, silicon nitride (SiNx), aluminum nitride (AlNx), boron, aluminum, silicon, phosphorus, zinc, gallium, germanium, gold, nickel, titanium, chromium, cadmium, indium, tin, antimony, thallium, lead, or their oxide, nitride or oxynitride. The handle substrate has substantially the same composition as the crystals. At least one of the crystals comprises a merged crystal.x, y, x+y = 0-1. EXAMPLE - No suitable example given.