NOVELTY - Manufacturing silicon-based semiconductor device containing silicon substrate that has front side and back side, selective emitters (24e, 24f), selective emitter contact regions, and a field-induced emitter involves forming the selective emitters and the selective-emitter contact regions by electrical and thermal treatment; and forming the field-induced emitter by pulse electrical treatment.    USE - For manufacturing silicon-based semiconductor device containing silicon substrate that has front side and back side, selective emitters, selective emitter contact regions, and a field-induced emitter (claimed), where the semiconductor device are selected from photovoltaic devices such as solar cells.    ADVANTAGE - The method significantly simplifies manufacturing, reduces cost, and increases throughput in the field of semiconductor fabrication.    DETAILED DESCRIPTION - Manufacturing silicon-based semiconductor device containing silicon substrate that has front side and back side, selective emitters (24e, 24f), selective emitter contact regions, and a field-induced emitter involves either forming the selective emitters and the selective-emitter contact regions by electrical and thermal treatment; and forming the field-induced emitter by pulse electrical treatment. The method further involves forming selective back-surface field (BSF) regions (25a, 25b) and contacts to the selective BSF regions by electrical and thermal treatment. The silicon-based semiconductor device further comprises a field-induced BSF region, and the method further involves forming the field-induced BSF region by pulse electrical treatment. The method involves providing a silicon substrate that has a front side and a back side; applying a dopant substance onto the front side of the silicon substrate in the form of dots or stripes, thus forming dopant-containing regions; carrying out initial sintering of the dopant-containing regions in order to solidify the dopant substance and to form low-doped selective-emitter regions; forming a front-side silicon oxide layer at least on the front side of the silicon substrate; depositing a front-side insulating film onto the silicon oxide layer; forming front windows on the front-side insulating film and on the silicon oxide layer; forming a silicon oxide layer on the back side of the silicon substrate; depositing a back-side insulating film onto the back-side silicon oxide layer; forming back windows on the back-side insulating film and on the back-side silicon oxide layer; applying a front-side conductive layer (38a) onto the front-side insulating film and onto the front windows and applying a back-side conductive layer (38b) onto the back-side insulating film and onto the back-side windows; performing electrical and thermal treatment by passing electrical current independently through the front-side conductive layer and through the back-side conductive layer, thus forming the selective emitters, the selective BSF regions, selective emitter contact regions, and contacts to the selective BSF regions, thus obtaining an intermediate device structure; cooling the intermediate device structure to an equilibrium state of the intermediate device structure; subjecting the intermediate device structure to pulse electrical treatment by applying a voltage pulse or pulses between the front-side conductive layer and the back-side conductive layer of the intermediate device structure; and removing the front-side conductive layer from the intermediate functional structure. The silicon-based semiconductor device is a front-side solar cell.    DESCRIPTION OF DRAWING(S) - The figure shows a view of the step of the method, which is a unique electrical and thermal treatment of the initial device structure.    Selective emitters (24e, 24f)    Selective back-surface field regions (25a, 25b)    Front-side conductive layer (38a)    Back-side conductive layer (38b)    Electrodes (42a, 42b)    Thermal zone (43)