NOVELTY - Recycling of silicon carbide from silicon material coil, comprises taking inorganic nanoparticle dispersion of waste mortar; separating solid from liquid by filtering; repeatedly washing filter residue with deionized water; decompressing and distilling first washing filtrate; extracting with liquid polyethylene glycol; performing secondary decompressing and distilling; adding additive to obtain new dispersion liquid; filtering dispersion liquid; drying filter residue; crushing; and performing ultrasonic vibration auxiliary flotation.    USE - Recycling of silicon carbide from silicon coil used for manufacturing thin film solar cell.    ADVANTAGE - The method provides solar grade silicon ingot having reduced phosphorus and boron content, preferably phosphorus content of less than 0:01 ppmw and boron content of less than 0:16 ppmw. The silicon ingot provides solar battery with reduced attenuation photoelectric conversion efficiency.    DETAILED DESCRIPTION - Recycling of silicon carbide from silicon material coil comprises taking inorganic nanoparticle dispersion of waste mortar; separating solid from liquid by filtering; repeatedly washing filter residue with deionized water; decompressing and distilling first washing filtrate; extracting with liquid polyethylene glycol; performing secondary decompressing and distilling; adding additive according to proportion to obtain new dispersion liquid; filtering dispersion liquid; drying filter residue; crushing; performing ultrasonic vibration auxiliary flotation using flotation liquid with specific gravity of 2.35-2.9, in which upper solid main component comprises silicon and silicon carbide, and lower layer solid main component comprises silicon carbide, small wire saw scrap iron, and precise adhesive; washing lower layer solid with water for 2-3 times; filtering; removing iron; washing with deionized water for 2-5 times; filtering; drying to obtain new silicon carbide and silicon carbide according to proportion in second dispersion liquid; soaking upper layer solid in strong acid for 1-5 times; filtering; washing with deionized water for 1-5 times; drying to obtain primary silicon powder; heating and melting silicon powder in resistor furnace or induction heating device; subjecting surface of liquid with high temperature plasma to remove impurities; and introducing silicon liquid in vacuum furnace to remove impurities, and then to unidirectional solidification furnace to obtain multi-crystal silicon ingot with enriched silicon impurity in each grade of surface.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a process for recycling silicon carbide from silicon material coil (Drawing includes non-English language text).