NOVELTY - A transparent conductive film deposited is cleaned on surface of substrate and substrate is cleaned in plasma chemical vapor deposition system. Raw materials are provided in plasma chemical gas-phase deposition system. Argon gas is infused to generate argon plasma, and argon flow rate of nitrogen is introduced. Substrate and cavity of plasma chemical vapor deposition system are cleaned. p-n Junction surface deposited silver film is prepared using magnetic control sputtering deposition, to obtain tin sulfur compound laminated solar battery.    USE - Production of tin sulfur compound laminated solar battery.    ADVANTAGE - The tin sulfur compound laminated solar battery is economically produced with high efficiency, by a simple method.    DETAILED DESCRIPTION - A transparent conductive film deposited is cleaned on the substrate, and substrate is cleaned in plasma chemical vapor deposition system. Raw materials containing tin and sulfur are provided in the plasma chemical gas-phase deposition system of raw material evaporation device. An argon gas is infused to generate argon plasma, argon flow rate of nitrogen is introduced to 20-70 sccm. The substrate and cavity of plasma chemical vapor deposition system are cleaned using argon plasma for 10-20 minutes under power of 10-50 W and processing pressure of 30-100 Pa. Substrate is heated using substrate heating device at 200-350 degrees C, and primary stage deposition is carried out using plasma chemical vapor deposition method on the cleaned surface of substrate. The n-type tin sulfur thin film is prepared, and argon gas and hydrogen are introduced to the plasma chemical gas-phase deposition system at 150-1000 degrees C for 20-120 minutes under hydrogen flow rate of 5-50 sccm, plasma power of 60-250 W and pressure of 100-150 Pa. The secondary stage deposition is performed using plasma chemical vapor deposition on the cleaned surface of substrate for preparing P-type tin-sulfur film. The gas is passed to the plasma chemical gas-phase deposition system for 20-120 minutes under flow rate of 20-70 sccm, power of 60-250 W, and pressure of 100-150 Pa. The inletting argon gas is stopped, plasma chemical gas-phase deposition system in the cavity of vacuum annealing is carried out at a plurality of groups to prepare p-n junction, and cooled to room temperature. The annealing is performed at 300-450 degrees C for 30-120 minutes in the argon atmosphere. The plurality of p-n junction surface deposited silver film having thickness of 100-300 nm is prepared using magnetic control sputtering deposition, to obtain tin sulfur compound laminated solar battery.