TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The precursor is a solid. The precursor comprises halides, alkoxides, beta -diketonates, nitrates, alkylamides, amidinates, cyclopentadienyls, or other forms of organic or inorganic metal or non-metal compounds. The precursor comprises tetrakis(1-methoxy-2-methyl-2-propoxide) hafnium(IV), hafnium tert-butoxide, hafnium ethoxide, aluminum isopropoxide, bis(cyclpentadinyl) ruthenium(II), tetrakis(ethylmethylamino)hafnium, hafnium(IV) nitrate, hafnium(IV) chloride, hafnium(IV) iodide, dimethyl bis(t-butyl cyclopentadienyl) hafnium(IV), di(cyclopentadienyl)hafnium dichloride, lead tert-butoxide, zirconium(IV) tert-butoxide, titanium(IV) isopropoxide, barium isopropoxide, strontium isopropoxide, bis(pentamethylcyclopentadienyl) barium, bis(tripropylcyclopentadienyl) strontium, (trimethyl)pentamethylcyclopentadienyl titanium(IV), bis(2,2,6,6-tetramethyl-3,5-heptanedionato) barium triglyme adduct, bis(2,2,6,6-tetramethyl-3,5-heptanedionato) strontium, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) titanium(III), pentakis(dimethylamido)tantalum(V) or tantalum compound of formula (Ta(N(CH3)2)3(NC9H11)). The concentration of the precursor is 0.01-1M. The precursor solution further includes stabilizing additives (0.0001-1 M) comprising oxygen containing organic compounds such as tetrahydrofuran, 1,4-dioxane or dimethylformide. The solvent has a boiling point to ensure no solvent loss during vaporization. The solvent comprises ethylcyclohexane, dioxane, octane, 2,5-dimethyloxytetrahydrofuran, toluene, n-butyl acetate, 2-methoxyethyl acetate, cyclohexanone, propylcyclohexane, 2-methoxyethyl ether (diglyme) or butylcyclohexane. The reaction solution comprises water, oxygen, ozone, hydrogen, ammonia, silane, disilane, diborane, hydrogen sulfide, organic amines or hydrazines, or other gaseous molecule or plasma or radical sources. The delivery of the vaporized precursor solution comprises delivery at a flow rate of 10 nl/minute to 10 ml/minute. Preferred Method: The method further comprises purging the deposition chamber between each alternate delivery of vaporized precursor solution and vaporized reaction solution. The vaporized precursor solution is delivered for 0.1-10 seconds, a first purge is carried out for 1-10 seconds, vaporized reaction solution is delivered for 0.1 to 10 seconds, and a second purge is carried out for 1-10 seconds. The vaporized precursor solution and the vaporized reaction solution are both completely vaporized. The alternate delivering comprises delivering using a vapor phase switching method or fast action pressure swing method. The precursor solution is: aluminum isopropoxide dissolved in ethylcyclohexane or octane and the thin film is aluminum trioxide; dimethylbis(tert-butylcyclopentadienyl) hafnium(IV) dissolved in ethylcyclohexane or octane and the thin film is hafnium oxide; tetrakis(1-methoxy-2-methyl-2-propoxide) hafnium(IV) dissolved in ethylcyclohexane or octane and the thin film is hafnium oxide; hafnium tert-butoxide or hafnium ethoxide dissolved in ethylcyclohexane or octane and the thin film is hafnium oxide; a mixture of bis(isopropoxy) barium, bis(isopropoxy) strontium, and bis(isopropoxy) titanium dissolved in ethylcyclohexane or octane and the thin film is barium strontium titanate; and bis(cyclpentadinyl) ruthenium(II) dissolved in dioxane, dioxane/octane or 2,5-dimethyloxytetrahydrofuran/octane and the thin film is ruthenium. The precursor solution is vaporized at 100-350 degrees C and at -14 psig to +10 psig.