NOVELTY - The apparatus has a polysilicon plate constrained from moving along an axis to experience lateral strain along an orthogonal axis. A semiconductor substrate (1100) has a cleave region (1106) and a surface region (1102) in communication with the plate to transmit the lateral strain. A peripheral gastight region is in fluid communication with the cleave region. A compressed gas source provides pressure to the gastight region during application of the lateral strain to result in a controlled cleaving in the substrate. The plate transmits the lateral strain along the orthogonal axis.    USE - Apparatus for manufacturing solar cells for photovoltaic applications. Can also be used in three-dimensional packaging applications in integrated semiconductor devices, photonic devices, piezoelectronic devices, flat panel displays, microelectromechanical systems (MEMS), nano-technology structures, sensors, actuators, integrated circuits and biological and biomedical devices.    ADVANTAGE - The apparatus manufactures the large substrates in cost effective and efficient manner. The apparatus allows area of a patterned initiation region to be limited to 1-3 percentage of the total substrate surface area to reduce total process dose, thus minimizing energy costs of the apparatus and enhancing productivity of thick film cleaving process. The apparatus allows pre-processing of a donor surface prior to or after implantation such as surface texturing, maximizing surface reflective properties, passivation, contact formation and surface doping to eliminate the need of a temporary supporting substrate. The apparatus transfers film onto a temporary or permanent substrate to avoid damaging a film.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for forming solar cells.    DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of a semiconductor substrate having a cleave region at a predetermined depth beneath a surface region.    Semiconductor substrate (1100)    Surface region (1102)    Cleave region (1106)    Thick film (1120)    High energy ion beam (1140)