NOVELTY - The device has a non-glassy bonding layer (154) deposited on a carrier substrate (152) e.g. zinc oxide. A set of seed structures (104C) is bonded to the non-glassy bonding layer through a bonding interface. A layer of semiconductor material (142) i.e. compressively strained gallium nitride, is grown upon a surface of the seed structures, where a layer of the semiconductor material contains thickness of greater than two microns and the seed structures are spaced from adjacent seed structures by distance of between 1 micron and about hundred microns.    USE - Semiconductor structure/device. Uses include but are not limited to an integrated circuit (IC) e.g. logic processor and memory device, radiation emitting device e.g. LED, resonant cavity LED (RCLED) and vertical cavity surface emitting laser (VCSEL), radiation absorbing device e.g. optical sensor and solar cell, and switching/rectifying device i.e. power electronic device.    ADVANTAGE - The device facilitate epitaxial fabrication of relatively thick layers of the semiconductor material with relatively lower concentrations of defects of the glass bonding layer by implementing strain balance obtained between an epitaxial layer formed of gallium nitride, of the semiconductor material and the seed structures. The carrier substrate and the layer of the semiconductor material can be bonded together by abutting a glass bonding layer on the carrier substrate against the layer of semiconductor material, thus maintaining resulting structure at desired temperature and pressure for sufficient amount of time to produce sufficient bonding strength between adjoining layers.    DETAILED DESCRIPTION - The device has a glass bonding layer made of oxide glass, phosphosilicate glass (PSG), borosilicate glass (BSG), borophosphosilicate glass (BPSG), polyimide, doped or undoped quasi-inorganic siloxane spin-on-glass (SOG), inorganic spin-on- glass and doped or undoped silicate glass.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an intermediate structure formed by growing additional semiconductor material over patterned semiconductor material on the intermediate structure.    Seed structures (104C)    Semiconductor material (142)    Carrier substrate (152)    Non-glassy bonding layer (154)    Intermediate structures (160, 170)