NOVELTY - The element has a mixture provided with an organic particle with an average particle diameter of 1-25 mu m which consists of thermally-decomposable resin particle. The sinter-ability powder is made up of silicon nitride as a main component and molded to make a molded object. The molded object is baked until the organic particle disappears. The sintered compact layer is obtained by sintering the sinter-ability powder. The porous hole originating in the shape of the organic particle is formed in the surface of the sintered compact layer.    USE - Silicon melt solution contact element used for manufacturing crystalline silicon such as spherical crystalline silicon and plate-shaped crystalline silicon of solar cell.    ADVANTAGE - Since the porous hole originating in the shape of the organic particle is formed in the surface of the sintered compact layer, the liquid repellency with respect to the fuse|melted silicon melt solution on the surface can be increased. The spherical crystalline silicon or the crystalline silicon of large sized plate shape can be manufactured efficiently. The liquid repellency can be maintained permanently. The crystallinity of spherical crystalline silicon can be increased. The efficiency of the silicon melt contacting element can be improved.    DETAILED DESCRIPTION - The element has porous sintered compact layer that is formed on the substrate. The thickness of the porous sintered compact layer is 5-500 mu m. The hole occupied area ratio of porous sintered compact layer is 30 to 80 %. The size of the hole is 1-25 mu m. The average depth of the hole which exists in the surface of the porous sintered compact layer is 5 mu m or more. INDEPENDENT CLAIMS are included for the following:    (1) manufacturing method of the crystalline silicon, involves cooling a silicon melt solution in the surface of the porous sintered compact layer of the silicon melt solution contact element. The silicon melt solution is obtained by melting solid-state silicon on a porous sintered compact layer; and    (2) manufacturing method of silicon melt solution contact element involves obtaining dispersion liquid for sintered compacts is obtained by mixing thermally-decomposable resin particles with an average particle diameter of 1-25 mu m in the organic solvent with respect to the sinterability powder. The sinterability powder is sintered at the temperature of 1100-1700 degrees C, so as to form porous sintered compact layer. The porous sintered compact layer is formed on the substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the stereoscopic-microscope photograph of the silicon melt solution contact element.