NOVELTY - The method involves epitaxially growing a crystal and forming several nanowire-like semiconductors (2) on the surface of semiconductor substrate (1). The gap of nanowire-like semiconductors is filled with filler (5) for embedding the nanowire-like semiconductors such that the nanowire-like semiconductor-filler composite element (6) is formed. The nanowire-like semiconductor arrays (9,10) are formed for peeling the nanowire-like semiconductor-filler composite element from the semiconductor substrate, by external force or heat shrink stress of filler.    USE - Manufacturing method of nanowire device used as light emitting device, solar cell, transistor and sensors.    ADVANTAGE - The recycling process of semiconductor substrate can be ensured with reduced cost. The operation for peeling the nanowire-like semiconductor-filler composite element from the semiconductor substrate can be performed easily with high freedom degree.    DETAILED DESCRIPTION - The support substrate (8) is formed in the surface of nanowire-like semiconductor-filler composite element, opposite side to semiconductor substrate. The portion of fillers on the opposite side to the semiconductor substrate is removed such that the front-end of nanowire-like semiconductor is exposed. The electrode (7) is connected at the front-end of exposed nanowire-like semiconductor for forming the support substrate on electrode. The heat-shrinkable material layer is formed in the surface on the opposite side to the semiconductor substrate of nanowire-like semiconductor-filler composite element. The portion of surface of the semiconductor substrate is covered with an amorphous film. The diameter of the surface of the semiconductor substrate exposed from the amorphous film is made smaller than the diameter of nanowire-like semiconductor. The catalyst metal is positioned on the surface of the semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional views illustrating the manufacturing process of nanowire device.    Semiconductor substrate (1)    Nanowire-like semiconductor (2)    Filler (5)    Nanowire-like semiconductor-filler composite element (6)    Electrode (7)    Support substrate (8)    Nanowire-like semiconductor arrays (9,10)