NOVELTY - A dispersion containing doped particles is applied on a specific portion of a semiconductor layer or a base material (10) consisting of semiconductor element, dried, doped with a p-type or n-type dopant and sintered, to obtain a dopant injection layer (52). Thus, a semiconductor device (500a) is manufactured. The crystal orientation of dopant injection layer is same as that of the semiconductor layer or base material. The concentration of the dopant is more than 1x 1020 atoms/cm3 in depth of 0.1 mu m from the surface of the dopant injection layer.    USE - Manufacture of semiconductor device e.g. solar cell including selective emitter type solar cell and back-contact type solar cell, thin-film transistor, field effect transistor (claimed).    ADVANTAGE - The semiconductor-silicon film is efficiently manufactured. The semiconductor laminate is economically manufactured with favorable semiconducting properties, flexibility, and lightness.    DETAILED DESCRIPTION - A dispersion containing doped particles is applied on a specific portion of a semiconductor layer or a base material consisting of semiconductor element. A non-sintered dopant injection layer is obtained by drying the applied dispersion. The specific portion of the layer or the base is doped with a p-type or n-type dopant by irradiating the non-sintered dopant injection layer with light, and the non-sintered dopant injection layer is sintered, to obtain a dopant injection layer integrated with the layer or the base material. Thus, a semiconductor device having the semiconductor layer or base material consisting of semiconductor element, and the dopant injection layer on the semiconductor layer or base material, is manufactured. The crystal orientation of dopant injection layer is same as that of the semiconductor layer or base material. The concentration of the dopant is more than 1x 1020 atoms/cm3 in depth of 0.1 mu m from the surface of the dopant injection layer. The concentration of the dopant is 1/10 or less of depth of 0.1 mu m in depth of 0.3 mu m from the surface of the dopant injection layer. The dispersion contains particles consisting of element same as semiconductor layer or base material. INDEPENDENT CLAIMS are included for the following:    (1) dispersion, which contains particles having crystallinity degree of 40% or less, and obtained from n-doped or p-doped semiconductor element;    (2) non-sintered silicon particle film, which consists of non-sintered silicon particles. The amount of desorption gas which desorbs when heated at 600 degrees C and 1 atmosphere in inert gas atmosphere is 500 mass ppm or less based on total amount of non-sintered silicon particle film;    (3) manufacture of non-sintered silicon particle film, which involves applying silicon particle dispersion containing silicon particle dispersed in dispersion medium on a base material, forming silicon particle dispersion film, drying silicon particle dispersion film, forming dry silicon particle film, baking dry silicon particle film at 300-900 degrees C, and forming non-sintered silicon particle film;    (4) semiconductor silicon film, which consists of sintered silicon particle, and does not contain carbon atom;    (5) manufacture of semiconductor-silicon film, which involves obtaining non-sintered silicon particle film, irradiating light to non-sintered silicon particle film, or applying heat, sintering silicon particle in non-sintered silicon particle film, and forming semiconductor-silicon film;    (6) semiconductor laminate, which has a composite silicon film on a base material, a primary silicon layer derived from amorphous silicon, and a secondary silicon layer derived from silicon particle on the primary silicon layer; and    (7) manufacture of semiconductor laminate, which involves forming amorphous-silicon layer on base material, applying silicon particle dispersion on amorphous-silicon layer, forming non-processed laminate in which silicon particle layer is laminated on amorphous-silicon layer by drying, irradiates laminate with light, and forming composite silicon layer.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of selective emitter-type solar cell.    Base material (10)    Light-receiving surface lateral electrode (22)    Protective layer (24)    Dopant injection layer (52)    Semiconductor device (500a)