NOVELTY - The system (400) has a plasma source providing a plasma (460) in a plasma region. A grid plate comprises a set of apertures to allow ions (470) from the plasma region, where the grid plate is biased by a pulsed power supply. Another grid plate comprises the apertures to allow the ions to pass through subsequent ions passing through the former grid plate, where the latter grid plate is biased by the power supply. A substrate holder supports a target substrate (440) in a position, where the substrate is implanted with the ions subsequent to the ions passing through the latter grid plate.    USE - Plasma grid beamline implantation system e.g. load-locked implantation system, plasma immersion implantation system and multi-stage differentially pumped implantation, for generating a multiple-piece simultaneous homogenous implantation for emitter and Back Surface Field doping, and for achieving surface passivation for selective emitter application in solar cell industry.    ADVANTAGE - The grid plates accelerates the ions from the plasma, thus minimizing back streaming electrons in an efficient manner. The system preferably comprises a chamber with a specific dimension, so that a plasma and grid overflow regions ensure uniformity of implantation on the substrate, thus providing the system with a multi-stage differentially-pumped non-load locked arrangement, thus transporting the substrate on a conveyor from an atmospheric side to a vacuum side, and hence reducing material cost of the system in an efficient manner. The system minimizes the dopant concentration of the homogeneous emitter region and maximizing the dopant concentration of the selective emitter regions, so that the ability of the solar cell to transfer the generated electrons from the homogeneous emitter region through the selective emitter regions to the contact lines is increased, thus reducing risk of losing electricity to electron-hole pair recombination and maximizing dopant concentration of the selective emitter regions near the contact lines, and hence allowing light to enter the solar cell and improving solar cells ability to transfer the electrons from the electron-hole pair generating region to contact lines in an efficient manner. The system provides a light dose implantation of a metallic species at locations near the surface of the wafer, so that a metal/silicon contact is improved markedly, thus improving performance of seed implants or work function adjustment implants in an efficient manner.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a plasma immersion implantation system.    Plasma grid implantation system (400)    Target substrate (440)    Plasma (460)    Ions (470)    High-voltage pulsar (480)