NOVELTY - The method comprises placing a substrate (1201) having a surface region at a first process station, forming a first electrode layer overlying the surface region of the substrate at the first process station using a first process, transferring the substrate to a second process station, forming a first resistive layer (1205) overlying the first electrode layer at the second process station, forming a barrier layer overlying the first electrode layer at the second process station using a second process, and transferring the substrate in a controlled ambient to a third process station.    USE - The method is useful for manufacturing a thin-film photovoltaic device such as a solar cell.    ADVANTAGE - The method is capable of easily manufacturing the photovoltaic device with high energy conversion efficiency.    DETAILED DESCRIPTION - The method comprises placing a substrate (1201) having a surface region at a first process station, forming a first electrode layer overlying the surface region of the substrate at the first process station using a first process, transferring the substrate to a second process station, forming a first resistive layer (1205) overlying the first electrode layer at the second process station, forming a barrier layer overlying the first electrode layer at the second process station using a second process, transferring the substrate in a controlled ambient to a third process station, forming (1204) a first window layer overlying the first electrode layer at the third process station, transferring the substrate in a controlled ambient to a fourth process station, forming a p-type absorber layer (1203) overlying the first electrode layer at the third process station using a third process, transferring the substrate to a fifth process station, and forming a second electrode layer overlying the n-type window layer at the fourth process station using a fourth process. The p-type absorber layer is characterized by a first bandgap range and a first thickness range. The method further comprises: transferring the substrate to a fifth process station and forming another barrier layer overlying the surface region of the substrate at a sixth process station using a fifth process, before forming the first electrode layer; transferring the substrate to the sixth process station and forming a resistive layer overlying the n-type window layer at the sixth process station using a sixth process, before forming the second electrode layer; in-situ monitoring properties of each layer formed at each process station; determining a process condition for a process based on data obtained in the monitoring of the earlier processes; forming a first absorber layer overlying the first electrode layer at the second process station; forming a n-type tunnel junction layer overlying the first window layer at the fourth process station; forming a p-type tunnel junction layer overlying the n-type tunnel junction layer at the fifth process station; forming a second window layer overlying the second absorber layer at the sixth process station; forming the first resistive layer overlying the first window layer before forming the n-type tunnel junction layer; and forming a second resistive layer overlying the second window layer before forming the second electrode layer. The step of transferring the substrate comprises transferring the substrate under reduced pressure and transferring the substrate in an ambient. The process stations are in process communication/are mechanically coupled with one another such that the substrate is maintained in an environment separate from an ambient environment external to the process chambers at all times during the method and in mechanical communication with one another such that the substrate is transferred from one process station to the next without being exposed to an ambient environment external to the process chambers. The first electrode layer comprises a transparent conducting oxide material and a conductive polymer material. The second electrode layer comprises a transparent conducting oxide material. The second electrode layer overlies on the second window layer at the seventh process station. The first resistive layer has a resistivity of 10 kohm-cm.    DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of a method for manufacture of a thin film photovoltaic device.    Placing substrate (1201)    Depositing backside electrode (1202)    Depositing p-type absorber layer (1203)    Depositing N-type window layer (1204)    Depositing resistive layer. (1205)