NOVELTY - Sputtering source comprises: a vacuum chamber having an ion emission aperture; a first sputtering target provided within the chamber and positioned so that its sputtering surface is oriented orthogonally to the aperture; a second sputtering target provided within the chamber and positioned so that its sputtering surface is oriented orthogonally to the aperture; a plasma power applicator for igniting and sustaining plasma within the chamber in the space between the first and second targets; a first magnet array; and a second magnet array.    USE - The sputtering source is useful: in a deposition system for depositing a layer onto a substrate; in physical vapor deposition on a substrate (all claimed) for forming thin films including diamond-like coating on substrates e.g. magnetic disks used in hard drives, indium tin oxide deposition of polymeric substrates and deposition of hydrated amorphous silicon; and fabrication of solar cells and light emitting diodes.    ADVANTAGE - The sputtering source: enables high deposition rate, high target utilization, controlled plasma interaction with the growing film and reduced neutral recoil or negative ion induced damage on the substrate; enables the fabrication of diamond-like coating with densities greater than 2.7 g/cm3 and without the incorporation of process hydrogen; has lower thermalization effect; requires decreased amount of working gas; affords the process engineer greater luxury of process-design; has a decreased sensitivity to vacuum environment; provides improved economics through higher yields as fewer finished film structures are found to have contamination defects, thus has the ability to relax costly standards of vacuum quality prior to production; and provides high quality transparent conductive oxide deposition with high transmissivity and low resistivity.    DETAILED DESCRIPTION - Sputtering source comprises: a vacuum chamber having an ion emission aperture; a first sputtering target provided within the chamber and positioned so that its sputtering surface is oriented orthogonally to the aperture; a second sputtering target provided within the chamber and positioned so that its sputtering surface is oriented orthogonally to the aperture, in a facing relationship to the first target and at a distance (d) from the first target; a plasma power applicator for igniting and sustaining plasma within the chamber in the space between the first and second targets; a first magnet array positioned behind the first target and having many magnets oriented with the south pole pointing towards the first target; and a second magnet array positioned behind the second target and having many magnets oriented with the north pole pointing towards the second target. INDEPENDENT CLAIMS are also included for:    (1) a deposition system for depositing a layer onto a substrate (166), comprising: a processing chamber (140); a first sputtering source provided on one side of the processing chamber; a second sputtering source provided on the opposite side of the processing chamber; and a transport mechanism provided within the processing chamber to scan the substrate while the first and second sputtering sources are energized, where the ion emission apertures are directed towards the processing chamber; and    (2) physical vapor deposition on a substrate, comprising forming a plasma cage within the vacuum chamber and exposing the emission aperture of the vacuum chamber into the processing chamber while confining the plasma to the vacuum chamber; and transporting the substrate in front of the aperture while ions are emitted from the aperture.    DESCRIPTION OF DRAWING(S) - The figure illustrates a system for high capacity sequential processing of substrates.    Processing chambers (140)    Carrier (156)    Substrate (166)    Robotic arm (168)    Loading module (170)