TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The inorganic film packaging material is metal oxide, metal sulfide, or metal nitride. The metal oxide comprises calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, aluminum sesquioxide, dichromium trioxide, tin dioxide, nickel oxide, or antimony pentoxide. The metal sulfide comprises titanium disulfide, chromium disulfide, copper sulfide, zinc sulfide, tin bisulfide, nickel sulfide, cobalt disulfide, antimony sulfide, lead sulfide, lanthanum trisulfide, cerium sulfide or zirconium disulfide. The nitride comprises silicon nitride or aluminum nitride.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polythiol-polyene system comprises polythiol-polyene compound of formula C(CH2OC(=O)(CH2)nSH)4, CH3(CH2)nC(CH2OC(=O)(CH2)nSH)3, HS(CH2CH2O)nCH2CH2SH, or S(CH2)nC(=O)(CH2CH2O)nC(=O)(CH2)nSH. The coupling agent is methyl vinyl dichlorosilane, methyl hydrogen dichlorosilane, dimethyl dichlorosilane, chlorosilane, vinyl chlorosilane, gamma -aminopropyl trimethoxysilane, polydimethyl siloxane, poly(methylhydrosiloxane), polymethyl methoxysiloxane, gamma -methyl propylene acid-base trimethoxysilane, gamma -aminopropyl triethoxysilane, gamma -glycidyl ether propyl trimethoxysilane, aminopropyl silsesquioxane, gamma -methyl propylene acyloxy propyl trimethoxysilane, long chain alkyl trimethoxysilane, vinyl triethoxysilane, vinyl trimethoxysilane, gamma -chloropropyl triethoxysilane, bis-( gamma -diethoxy silane), aniline methyltriethoxysilane, N- beta -(aminoethyl) gamma -aminopropyl trimethoxysilane, N-( beta -aminoethyl) gamma -aminopropyl triethoxysilane, N- beta -(aminoethyl) gamma -aminopropyl methyl dimethoxy silane, gamma -(2,3-epoxy propoxy) propyl trimethoxysilane, gamma -(methacryloyloxy) propyl trimethoxysilane, gamma -hydrosulfonyl propyl trimethoxysilane or gamma -hydrosulfonyl propyl triethoxysilane. Preferred Method: The method specifically comprises washing rigid base plate with surface roughness less than 1 nm; drying by dry nitrogen; employing high vacuum evaporation, spin coating, self-assembling, ink jet printing, screen printing to prepared optoelectronic device on rigid substrate; preparing inorganic sealing material layer on prepared photo-electronic device; preparing UV sensitive material layer on device, where the ultraviolet sensitive material layer; performing UV photo-curing on rigid substrate surface for 30 seconds; repeating steps of preparing UV sensitive material layer on device and UV photo-curing to cure device with UV; continuously repeating for several times; and testing service life and other parameters of device. The inorganic sealing material and UV sensitive material packaging layer adopt vacuum evaporation, ion group beam deposition, ion plating, direct current sputtering coating, radio frequency sputtering coating, ion beam sputtering coating, ion beam assisted deposition, plasma enhanced chemical vapor deposition, high density inductance coupling type plasma source chemical vapor deposition, catalyst type chemical vapor deposition, magnetron sputtering, ink jet printing, electroplating, spraying, spin coating, dip coating, or roller coating or Langmuir-Blodgett film processing.