NOVELTY - A silicon based solar battery p-n junction manufacturing method involves taking 3-4N silicon as a substrate. The obtained piece is dipped in the presence of sealed environment protection of argon gas. The dipped piece is taken out and cooled to room temperature. A silicon slice phosphorus source is coated on a p-type layer, and the coated phosphorus source is dried into a drying room. A shallow junction is formed in the presence of protection of high temperature and nitrogen. Diffusion impurity redistribution and annealing process are performed in a boundary of the p-n junction.    USE - Method for manufacturing a silicon based solar battery p-n junction.    ADVANTAGE - The method enables manufacturing the silicon based solar battery p-n junction without loss of material waste and without impurities.    DETAILED DESCRIPTION - A silicon based solar battery p-n junction manufacturing method involves taking 3-4N silicon as a substrate, where 3-4N lies in range of P less than 0.2 partspermillion (ppm) weight and B less than 0.2 ppm weight in high temperature cleaning, and the high temperature is 1350-1400 degrees C. The obtained piece is dipped in the presence of sealed environment protection of argon gas, where dipping liquid is 1420-1450 degrees C in molten state and B less than 0.2 ppm weight for 6-7N multi-crystal silicon, and dipping liquid dipping temperature is controlled at 1420 degrees C for 0.2-0.6 seconds. The dipped piece is taken out and cooled to room temperature. A silicon slice phosphorus source is coated on a p-type layer, and the coated phosphorus source is dried into a drying room for 10-30 minutes at the temperature of 80-100 degrees C. A shallow junction is formed in the presence of protection of high temperature and nitrogen, where the temperature is in range of 1000-1100 degrees C-1050 degrees C for 4-5 minutes. Diffusion impurity redistribution and annealing process are performed in a boundary of a p-n junction at temperature ranging from 800-900 degrees C-850 degrees C for 30-40 minutes.