TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The electrode comprises: a buffer layer at a region adjacent to the semiconductor layer, and an electrode portion separated from the buffer layer by the electrode portion, where the buffer layer has the composition of the metallic glass with some of the material of the conductive powder dissolved in it. At least one of the buffer layer, the interface of the semiconductor layer and the buffer layer, and the semiconductor layer comprises a conductive material that is crystallized.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The first element, the second element, and the third element are included in a ratio satisfying the equation as given in the specification. The first element, the second element, the third element, and the fourth element are included in a ratio satisfying equation as given in the specification. The conductive powder, the metallic glass, and the organic vehicle are included at 30-99 wt.%, 0.1-20 wt.%, and 0.9-69.9 wt.%, respectively. Preferred Components: The eutectic temperature of the conductive powder and the first element is lower than the firing temperature of the conductive paste. The conductive paste has a firing temperature of less than or equal to 1000 degrees C, and optionally has a firing temperature of 200-1000 degrees C. The first element comprises at least one of lanthanum (La), cerium (Ce), praseodymium (Pr), promethium (Pm), samarium (Sm), lutetium (Lu), yttrium (Y), neodymium (Nd), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), thorium (Th), calcium (Ca), scandium (Sc), barium (Ba), beryllium (Be), bismuth (Bi), germanium (Ge), lead (Pb), ytterbium (Yb), strontium (Sr), europium (Eu), zirconium (Zr), thallium (TI), lithium (Li), hafnium (Hf), magnesium (Mg), phosphorus (P), arsenic (As), palladium (Pd), gold (Au), plutonium (Pu), gallium (Ga), aluminum (Al), copper (Cu), zinc (Zn), antimony (Sb), silicon (Si), tin (Sn), titanium (Ti), cadmium (Cd), indium (In), platinum (Pt), and mercury (Hg). The metallic glass further comprises a second element and a third element, and the metallic glass is an alloy of formula (A)x-(B')y-(C')z (I). The metallic glass further comprises a second element, a third element, and a fourth element, and the metallic glass is an alloy of formula (A)x'-(B')y'-(C')z'-(D')w'. The conductive powder has resistivity of less than or equal to 100 mu Omega cm. The conductive powder comprises at least one of silver (Ag), aluminum (Al), copper (Cu), and/or nickel (Ni).A=first element;B'=second element;C'=third element;x and x'=composition ratio of first element;y and y'=composition ratio of second element;z and z'=composition ratio of third element;x+y+z=100;D'=fourth element;w'=composition ratios the fourth element;x'+y'+z'+w'=100. EXAMPLE - A metallic glass of Cu46Zr46Al8 was prepared in a form of a ribbon having a thickness of 90 mu m and a width of 0.5 cm. The metallic glass ribbon was cut to have a length of 1 cm and coated with silver (Ag) paste including silver (Ag) (85 wt.%). The metallic glass ribbon was heated at 650 degrees C for 30 minutes while being exposed to air to provide a conductive thin film. The heating treatment was performed at a speed of 50 degrees C/minutes. The film had 8 atomic.% silver solid solubility.