NOVELTY - Electrode structure (I) comprises: a bottom electrode; a top electrode; and an insulating column operable to insulate the bottom electrode from the top electrode, where the top electrode is positioned on a top surface of the insulating column and the bottom electrode is positioned on top of a substrate supporting the insulating column, the bottom electrode does not extend between the insulating column and the substrate.    USE - The electrode structure (I) or (II) is useful: in a low-mobility semiconducting device, which is a photovoltaic cell or transistor (organic field effect transistor) (claimed); and for design and manufacture of interdigitated electrical contacts for low electronic mobility semiconductors.    ADVANTAGE - The electrode structure: provides interdigitated electrical contacts for low electronic mobility semiconductors having a large channel width in a small footprint with enhanced gate coupling strength and full depletion of the channel material, at less than 100 nm length scale; and effectively eliminates the source of the drain leakage currents due to the presence of the inactive semiconductor material.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) an electrode structure (II), comprising a first electrode, having a first thickness, a first width, and a first length, and a second electrode, having a second thickness, a second width and a second length, where the first and second electrodes are coplanar and supported on a common substrate, and where the first and second electrodes are separated in the plane of the substrate by a predetermined linear distance, where the first width and the second width are less than 100 nanometers;    (2) a low-mobility semiconducting device, comprising a grating having the electrode structure (I) or (II), and a semiconducting material disposed between adjacent insulating columns within the grating;    (3) a low-mobility semiconducting device (III), comprising a substrate patterned into a grating, a bottom electrode positioned in a groove of the substrate, a top electrode coplanar to the bottom electrode and positioned on a top surface of the substrate and a semiconducting material disposed on top of the bottom electrode and the top electrode, where the top electrode and the bottom electrode are separated out of a plane of the substrate by a channel length; and    (4) making an electrode structure, comprising forming a nanostructured template on a substrate, depositing a first metal on the template and removing excess metal from areas of the template desired to be metal-free, where the nanostructured template comprises an oxidized conductor patterned into a grating, the grating comprising lines and grooves, each line having a height and a top surface, a width and two opposing sides, and a length and each groove having a width and a bottom, the width of the groove defining a spacing between the lines.