NOVELTY - The method comprises: forming a layer of polysilicon (104) over a backside of a solar cell substrate; printing a first dopant source (105) over the layer of polysilicon; curing the first dopant source to diffuse dopants from the first dopant source to the layer of polysilicon to form a first diffusion region (107) in the layer of polysilicon; and preventing counterdoping of dopants from the first dopant source to a second dopant source (106) using a thermally stable ink for the first dopant source during the curing of the first dopant source.    USE - The method is useful for fabricating solar cell, which is useful for converting solar radiation to electrical energy.    ADVANTAGE - The method is capable of economically fabricating solar cell with improved stability and efficiency thus preventing the counter doping.    DETAILED DESCRIPTION - The method comprises: forming a layer of polysilicon (104) over a backside of a solar cell substrate; printing a first dopant source (105) over the layer of polysilicon; curing the first dopant source to diffuse dopants from the first dopant source to the layer of polysilicon to form a first diffusion region (107) in the layer of polysilicon; preventing counterdoping of dopants from the first dopant source to a second dopant source (106) using a thermally stable ink for the first dopant source during the curing of the first dopant source; and texturing a surface formed over the front side of the solar cell substrate. The solar cell substrate has a front side facing the sun to receive solar radiation during normal operation, the backside opposite the front side. The first dopant source comprises printable inks. The step of preventing counterdoping of dopants from the first dopant source to the second dopant source comprises: forming a capping layer over the first dopant source; forming the second dopant source to a thickness greater than 3000 Angstroms; and purging dopants from the first dopant source out of a chamber during the curing of the first dopant source. The step of curing of the first dopant source cures the second dopant source to diffuse dopants from the second dopant source to form a second diffusion region (108) in the layer of polysilicon. The step of purging dopants from the first dopant source out of the chamber during the curing of the first dopant source comprises flowing an inert gas through the chamber, and curing the first dopant source in a chamber under vacuum. The first and second dopant sources are printed in one pass of an inkjet printing process. An INDEPENDENT CLAIM is included for a solar cell structure.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross sectional view of a method for fabricating solar cell.    Polysilicon layer (104)    First dopant source (105)    Second dopant source (106)    First diffusion region (107)    Second diffusion region. (108)