NOVELTY - A silicon wafer is etched using sodium hydroxide, isopropanol and deionized water, positioned in quartz boat, processed, special mark is marked at one side (A) of bearing box, and upper portion of the silicon wafer in quartz boat faces towards the side (A). Wafer is dry-etched, again placed in bearing box, processed, and discharged. Silicon wafer is subjected to plasma-enhanced chemical vapor deposition, placed in charging platform of printer, one side of bearing box is kept vertically along printing production line, silicon wafer is printed and sintered, to obtain solar cell.    USE - Production of solar cell by diamond wire cutting.    ADVANTAGE - The method economically and efficiently provides solar cell, with improved yield.    DETAILED DESCRIPTION - Line position of a silicon wafer is observed, silicon wafer is mechanically inserted or manually inserted according to the line vertical to a basket. Then, the silicon wafer is etched using (in %mass) sodium hydroxide (1.5-1.8), isopropanol (3-4), additive (0.15-0.35) and remainder of deionized water, reacted at 80-82 degrees C for 10-20 minutes, and thinning amount of the silicon wafer is controlled to 0.3-0.5 g. The silicon wafer is positioned in a quartz boat, such that the position is same as the position in the basket, processed, consistency of position of the silicon wafer in the quartz boat is maintained during discharging, a special mark is marked at one side (A) of a bearing box, such that the side (A) is distinguished from other sides, and upper portion of the silicon wafer in the quartz boat faces towards the side (A). The resultant wafer is dry-etched, position of the silicon wafer in bracket is fixedly kept, and the silicon wafer is again placed in bearing box, such that direction of silicon wafer is same as that of diffused silicon wafer placed in bearing box. The silicon wafer in the basket is positioned, such that portion of the silicon wafer facing towards the side (A) on the bearing box is vertically upward. When the wafer is discharged using a flat plasma-enhanced chemical vapor deposition method, and edge of the special mark of the bearing box is positioned vertical along operation direction of the silicon wafer. When the wafer is discharged using plasma-enhanced chemical vapor deposition method, same vertical direction of the silicon wafer in graphite boat and the basket are maintained. The wafer is discharged, such that upper edge of vertical silicon wafer in the graphite boat is close to one side of the bearing box with the special mark. Then, the silicon wafer is subjected to plasma-enhanced chemical vapor deposition, and the bearing box is placed in a charging platform of a printer, one side of the bearing box with the special mark is kept vertical to printing production line, the silicon wafer is printed and sintered, to obtain solar cell.