NOVELTY - A photoelectric conversion apparatus comprises microcrystal thin film semiconductor layer which contains p layer, i layer, and n layer or mixed layer of microcrystal semiconductor and amorphous semiconductor, wherein p layer (4), i layer (5), and n layer (6) are formed on transparent electrode side between transparent electrode (1) and back surface electrode (7), and surface plasmon induction layer (2) which has microparticles (3).    USE - A photoelectric conversion apparatus for solar cell.    ADVANTAGE - Photoelectric conversion efficiency is improved.    DETAILED DESCRIPTION - A photoelectric conversion apparatus comprises microcrystal thin film semiconductor layer which contains p layer, i layer, and n layer or mixed layer of microcrystal semiconductor and amorphous semiconductor, wherein p layer (4), i layer (5), and n layer (6) are formed on transparent electrode side between transparent electrode (1) and back surface electrode (7), and surface plasmon induction layer (2) which has microparticles (3) that hold free electron and have average diameter of 1-1000 nm and is laminated between transparent electrode and p layer and between back surface electrode and n layer. Microparticles are microparticles of tungsten oxide of formula WyOz, wherein W is tungsten, O is oxygen, and z/y is 2-3 or microparticles of composite tungsten oxide of formula MxWyOz, wherein W is tungsten, O is oxygen, x/y is 0.001-1, z/y is 2-3, and M is hydrogen (H), helium (He), alkali metal, alkaline earth metal, or rare earth element e.g. magnesium (Mg), zirconium (Zr), chromium (Cr), manganese (Mn), iron (Fe), ruthenium (Ru), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), zinc (Zn), cadmium (Cd), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), silicon (Si), germanium (Ge), tin (Sn), lead (Pb), antimony (Sb), boron (B), fluorine (F), phosphorus (P), sulfur (S), selenium (Se), bromine (Br), tellurium (Te), titanium (Ti), niobium (Nb), vanadium (V), molybdenum (Mo), tantalum (Ta), rhenium (Re), beryllium (Be), hafnium (Hf), osmium (Os), bismuth (Bi), or iodine (I). Microparticles have average diameter of 1-1000 nm. An INDEPENDENT CLAIM is included for manufacturing method of photoelectric conversion apparatus which involves forming transparent electrode on transparent substrate, forming surface plasmon induction layer which contains coating film coated with dispersion liquid having microparticles, laminating surface plasmon induction layer between back surface electrode and n layer and between transparent electrode and p layer, performing plasma chemical vapor deposition (CVD) method, forming microcrystal silicon layer which contains p layer, i layer, and n layer or mixed layer of microcrystal silicon and amorphous silicon by performing wet coating method using silane compound, and forming back surface electrode on formed n layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional diagram of photoelectric conversion apparatus.    Transparent electrode (1)    Surface plasmon induction layer (2)    Microparticles (3)    P layer (4)    I layer (5)