NOVELTY - The dispersion device comprises a spreader plate (120) including gas nozzles (170) that perpendicularly inject a mixing gas of a carrier gas and a reaction gas about the spreader plate to an inside of a fluid bed reactor (100). The spreader plate is equipped with a path to allow particle type poly-silicon about a wall (110) of the reactor with a fixed angle, where the poly-silicon is grown up in a central part for the discharge. The device has a thickness of 5-10 mm. A lower part (124) of the spreader plate is made of high quality alloy that is stable at a temperature of 600-1000 degrees C.    USE - The dispersion device is useful in a fluid bed reactor for producing a particle type poly-silicon (claimed) that is useful for manufacturing a solar cell.    ADVANTAGE - The dispersion device prevents reaction gas deposition in the reactor wall, removes rain floating area on the spreader plate, improves mixing of the reactant to improve reaction efficiency, reduces abrasion of the spreader plate and contamination of the poly-silicon, minimizes ejection of the ungrown poly-silicon, prevents outflow of the poly-silicon grain from a grid nozzle so as to reduce process loss, and reduces manufacturing cost of the solar cell.    DETAILED DESCRIPTION - The dispersion device comprises a spreader plate (120) including gas nozzles (170) that perpendicularly inject a mixing gas of a carrier gas and a reaction gas about the spreader plate to an inside of a fluid bed reactor (100). The spreader plate is equipped with a path to allow particle type poly-silicon about a wall (110) of the reactor with a fixed angle, where the poly-silicon is grown up in a central part for the discharge. The device has a thickness of 5-10 mm. A lower part (124) of the spreader plate is made of high quality alloy that is stable at a temperature of 600-1000 degrees C. The first gas nozzle, in which the mixing gas is injected, is included in the lower part of the spreader plate. The second gas nozzles injecting the mixing gas to the reactor inside are included in a top of the spreader plate. A diameter of the first gas nozzle is greater than a diameter of each second gas nozzle. The second gas nozzles are arranged around the first gas nozzle. The diameter of the second gas nozzle is 1/10- one half of the diameter of the first gas nozzle. The 3-10 second gas nozzles are arranged around the first gas nozzle. The device further comprises: a first cooling fluid inlet port that is located in a central part of the spreader plate and injects a cooling fluid; a first cooling channel connected to the first cooling fluid inlet port and located in a lower part of the spreader plate; a first cooling fluid vent in which the flowing cooling fluid is ejected through the first cooling channel; a carrier gas inlet port parallelly injecting the carrier gas through the gas nozzle that is positioned in the outermost of the spreader plate about the reactor wall; a second cooling fluid inlet port that is located in the outermost of the spreader plate and injects the cooling fluid; a second cooling channel connected to the second cooling fluid inlet port and located in the outermost of the spreader plate; and a second cooling fluid vent in which the flowing cooling fluid is ejected through the second cooling channel. A temperature of the spreader plate is maintained at 200-350 degrees C. A diameter of gas nozzles in a distance from the central part of the spreader plate is 1.2-1.5 times greater than the diameter of the other gas nozzles. A casting speed of the carrier gas is smaller than a terminal velocity of the grown up poly-silicon. The dispersion device has a linear velocity of 200-500 cm/s. The reactor wall has the fixed angle of 30-50 degrees . The lower part of the spreader plate comprises a metal.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic side view of a dispersion device of a fluid bed reactor.    Fluid bed reactor (100)    Reactor wall (110)    Spreader plate (120)    Lower part (124)    Gas nozzles. (170)