NOVELTY - The method comprises preparing an N-type base semiconductor substrate, where the substrate comprises an n-base layer (10), a p-type emitter (20) positioned on the n-base layer, a first passivation layer (30a) positioned on the p-type emitter, and a second passivation layer (30b) positioned on the n-base layer, applying a first conductive paste onto the first passivation layer, firing the conductive paste at 800-1000 degrees C for 30 seconds to 5 minutes, and applying a second conductive paste onto the second passivation layer.    USE - The method is useful for manufacturing a p-type electrode, which is useful in an N-type base solar cell (claimed).    ADVANTAGE - The method is capable of economically and simply manufacturing the p-type electrode with less contact resistance and improved electrical properties thus enhancing conversion efficiency of the solar cell.    DETAILED DESCRIPTION - The method comprises preparing an N-type base semiconductor substrate, where the substrate comprises an n-base layer (10), a p-type emitter (20) positioned on the n-base layer, a first passivation layer (30a) positioned on the p-type emitter, and a second passivation layer (30b) positioned on the n-base layer, applying a first conductive paste onto the first passivation layer, firing the conductive paste at 800-1000 degrees C for 30 seconds to 5 minutes, and applying a second conductive paste onto the second passivation layer. The first conductive paste comprises 100 parts by weight (pbw) of a conductive powder comprising a metal consisting of silver, nickel and/or copper, 0.3-8 pbw of aluminum powder with a particle diameter of 3-11 mu m, 3-22 pbw of a glass frit, and an organic medium. A softening point of the glass frit is 300-600 degrees C. The first passivation layer has a thickness of is 10-2000 Angstrom . The first and second conductive pastes applied onto the first and second passivation layers respectively are co-fired.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method for manufacturing a p-type electrode of an N-type base solar cell.    N-base layer (10)    P-type emitter (20)    First passivation layer (30a)    Second passivation layer (30b)    N-type electrode. (71)