NOVELTY - Back-side-illumination (BSI) complementary-metal oxide-semiconductor (CMOS) image sensor comprises a photodiode device comprising a substrate, at least one photodiode in the substrate and a wide bandgap material layer on a first surface of the substrate, a metal interconnection layer disposed on a second surface of the semiconductor substrate, an anti-reflective layer (ARL) on the wide bandgap material layer, a color filter on the ARL, and a micro lens on the color filter.    USE - Used as a back-side-illumination complementary-metal oxide-semiconductor image sensor.    ADVANTAGE - The image sensor: improves the sensitivity to blue light; reduces and prevents crosstalk and a mixture of colors; and comprises the solar cell including a photodiode device, which improves the receiving efficiency of blue light to enhance the electricity generation capability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a solar cell, comprising a photodiode device including a substrate, at least one photodiode in the substrate, and a wide bandgap material layer on a first surface of the substrate, an anti-reflective layer (ARL) on the wide bandgap material layer, a first electrode layer in the ARL electrically connected to the photodiode device, and a second electrode layer on a second surface of the semiconductor substrate electrically connected to the photodiode device;    (2) a photodiode system comprising a substrate, at least one photodiode in the substrate, at least one photodiode between an insulating material in a horizontal plane, and the wide bandgap material layer on a first surface of the substrate;    (3) a solar cell comprising the photodiode system and further including a first electrode electrically connected to the photodiode, a second electrode electrically connected to the photodiode;    (4) an image sensor comprising the photodiode system and further including a color filter on the photodiode, a micro-lens on the color filter, a metal interconnection layer, where at least one photodiode is on the metal interconnection layer and between the color filter and the metal interconnection layer;    (5) unit pixel (220) comprising the photodiode system, a transfer transistor operatively connected to the at least one photodiode of the photodiode system and configured to transfer charges generated by the photodiode of the photodiode system to a floating diffusion region in the substrate for storage, a reset transistor operatively connected to the floating diffusion region, the reset transistor configured to reset charges stored in the floating diffusion region, a drive transistor configured to buffer signals corresponding to charges stored in the floating diffusion region, and a select transistor operatively connected to the drive transistor, and the select transistor configured for selecting the unit pixel; and    (6) an imaging system comprising a CMOS image sensor including the photodiode system, a bus operatively connecting the CMOS image sensor to a processor configured to process an output of the CMOS image sensor.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the BSI-CMOS image sensor.    Pixel array region (200)    Unit pixel (220)    CMOS control circuit (300)