NOVELTY - An array of nanowires, comprises: a set of nanowires, the set of nanowires including a set of first ends and a set of second ends respectively; where: for each of the set of nanowires, a corresponding first end selected from the set of first ends and a corresponding second end selected from the set of second ends are separated by a distance of at least 200 mu m; and all nanowires of the set of nanowires are substantially parallel to each other.    USE - The array of nanowires and nanostructures are useful in solar power, battery electrodes and/or energy storage, catalysis, and/or light emitting diodes.    ADVANTAGE - The array of nanowires and nanostructures are cost effective, highly improved and reliable.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are:    (1) an array of nanostructures, comprising: a set of nanostructures, the set of nanostructures including a set of first ends and a set of second ends respectively; where: for each of the set of nanostructures, a corresponding first end selected from the set of first ends and a corresponding second end selected from the set of second ends are separated by a distance of at least 200 mu m; all nanostructures of the set of nanostructures are substantially parallel to each other; and each of the set of nanostructures includes a semiconductor material; and    (2) a method for forming the array of nanowires, comprising: providing a semiconductor substrate including a first surface and one or more second surfaces; masking at least one or more portions of the one or more second surfaces with at least a first portion of the first surface being exposed; applying a metalized film to at least the exposed first portion of the first surface; etching the semiconductor substrate through at least the exposed first portion of the first surface using a first etchant solution; and forming a first set of nanowires, each of the first set of nanowires including a first end at a third surface and a second end, the first end and the second end being separated by a first distance of at least 200 mu m; where: the first set of nanowires corresponds to a first area on the first surface; the first area on the first surface substantially corresponds to the exposed first portion of the first surface; and all nanowires of the first set of nanowires are substantially parallel to each other.    DESCRIPTION OF DRAWING(S) - The drawing shows a simplified schematic diagram of an array of nanowires.    Semiconductor substrate (110)    Array of nanostructures (120, 160)    Nanowires (130, 17)    First end (140)    Second end (150)