TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Matrix: The matrix is a part of a thermoelectric device. It further comprises nanostructures including one or more fill materials. A distance between the first end and the second end is at least 300, 400, 500, or 525 mu m. The nanowires correspond to an area, the area being approximately 0.0001 mm2 in size; the nanowires correspond to an area, the area being smaller than 0.01 mm2 in size; or the nanowires correspond to an area, the area being at least 100 mm2 in size. The area is at least 1000 mm2 in size; the area is at least 2500 mm2 in size; or the area is at least 5000 mm2 in size. The melting temperature and the sublimation temperature are each above 450 degrees C; the melting temperature and the sublimation temperature are each above 550 degrees C; the melting temperature and the sublimation temperature are each above 650 degrees C; the melting temperature and the sublimation temperature are each above 750 degrees C; or the melting temperature and the sublimation temperature are each above 800 degrees C. Thermal conductivity is less than 5 Watts per meter per degree Kelvin; thermal conductivity is less than 1 Watt per meter per degree Kelvin; thermal conductivity is less than 0.1 Watt per meter per degree Kelvin; thermal conductivity is less than 0.01 Watt per meter per degree Kelvin; thermal conductivity is less than 0.001 Watt per meter per degree Kelvin; or thermal conductivity is less than 0.0001 Watt per meter per degree Kelvin. One or more fill materials each include at least one selected from photoresist, spin-on glass, spin-on dopant, aerogel, xerogel, and oxide. The photoresist is G-line photoresist. The oxide is selected from aluminum oxide (A12O3), iron oxide (FeO, FeO2, Fe2O3), titanium oxide (TiO), titanium dioxide (TiO2), zirconium dioxide (ZrO2), zinc oxide (ZnO), hafnium oxide (HfO2), chromium oxide (CrO), tantalum oxide (Ta2O5), silicon nitride (SiN), titanium nitride (TiN), boron nitride (BN), silicon dioxide (SiO2), aluminum nitride (AlN), and cyanide (CN). One or more fill materials include one or more long chains of one or more oxides. The matrix is porous. Surfaces of the nanowires are hydrophilic or hydrophobic. At least one surface of the matrix is planarized. One or more fill materials are in different layers respectively. The different layers include a first layer, a second layer, and a third layer; the first layer includes one or more materials selected from SiN, TiN, BN, AlN, and CN; the second layer includes a first oxide; and the third layer includes a second oxide. The first oxide is SiO2 and the second oxide is ZrO2. The first layer is on the nanowires; the second layer is on the first layer; and the third layer is on the second layer. The different layers further include a fourth layer and a fifth layer; the fourth layer includes the first oxide; and the fifth layer includes the second oxide. Matrix includes a first region and a second region; and one or more fill materials include one or more first materials located in the first region and one or more second materials located in the second region. Nanowires include a semiconductor, where the semiconductor is silicon. The nanostructures correspond to nanoholes; and the nanoholes are the voids. The nanostructures correspond to nanowires; and spaces surrounding the nanowires are the voids. Preferred Method: Making matrix with at least one embedded array of nanostructures further comprises forming the nanostructures including first ends and second ends respectively. It also comprises pretreating one or more surfaces of the nanostructures. Pretreating includes altering the hydrophobicity of one or more surfaces of the nanostructures. The method further comprises preparing one or more fill materials. Preparing one or more fill materials includes doping one or more fill materials; and curing one or more fill materials. Curing one or more fill materials includes heating one or more fill materials to at least 300 degrees C; or curing one or more fill materials includes heating one or more fill materials to at least 500 degrees C. The method also comprises planarizing at least one surface of the matrix. Planarizing at least one surface of the matrix includes polishing the surface of the matrix. Filling the voids includes applying one or more fill materials in liquid form to the nanostructures; and rotating the nanostructures to remove at least a portion of one or more fill materials. Filling the voids includes dipping the nanostructures in one or more fill materials. Filling the voids includes depositing one or more fill materials. Depositing one or more fill materials includes chemical vapor deposition; or depositing one or more fill materials includes atomic layer deposition. Depositing one or more fill materials includes using at least one selected from tetra-methyl-ortho-silicate (TMOS), tetra-etho-ortho-silicate (TEOS), and silane (SiH4). Depositing one or more fill materials includes forming at least a conformal layer of one or more fill materials. Depositing one or more fill materials includes depositing one or more fill materials in layers. Depositing one or more fill materials includes depositing a first layer, the first layer including one or more materials selected from a SiN, TiN, BN, AlN, and CN; depositing a second layer, the second layer including a first oxide; and depositing a third layer, the third layer including a second oxide. The first oxide is SiO2 and the second oxide is ZrO2. The process for depositing the first layer includes depositing the first layer on surfaces of the nano structures; the process for depositing the second layer includes depositing the second layer on the first layer; and the process for depositing the third layer includes depositing the third layer on the second layer. Depositing one or more fill materials further includes depositing a fourth layer, the fourth layer including the first oxide; and depositing a fifth layer, the fifth layer including the second oxide. One or more fill materials include one or more first materials and one or more second materials; the voids include a first void and a second void; and the process for filling the voids includes filling the first voids with one or more first materials; and filling second voids with one or more second materials.