NOVELTY - Electroplating thin film (100) including Group VA material on conductive surface (102) involves: providing electrodeposition solution having pH of greater than or equal to 7 and comprising solvent; Group VA material, and another material including Group IB, Group IIIA, and/or Group VIA material; and complexing agent(s) that complexes with materials to form soluble complex ions of materials; contacting solution with anode and conductive surface; establishing potential difference between anode and conductive surface; and electrodepositing thin film of Group VA material and another material on surface.    USE - For electroplating thin film including Group VA material on conductive surface, where the thin film is VAIBIIIA thin film or VAIBIIIAVIA thin film (claimed) for solar cells such as solar cell absorbers.    ADVANTAGE - The method for electroplating thin film including Group VA material on conductive surface allows for depositing uniform, smooth and defect-free doped Group IB-Group IIIA alloy or mixture films, as well as doped Group IB-Group IIIA-Group VIA alloy or mixture layers, in repeatable manner. The films include layers of Cu(In,Ga)(S,Te,Se)2. The stoichiometry or composition of such films e.g. Group IB/Group IIIA atomic ratio, can be controlled by varying plating conditions. With the method, it is possible to form micron or sub-micron thick alloy or mixture films on conductive contact layer surfaces for formation of solar cell absorbers. Doped copper indium gallium diselenide (CIGS) and CIS type solar cell absorbers can be prepared from precursors including Group VA elements as dopant elements, such as phosphorus, arsenic, antimony and bismuth. The prior art plating solutions for obtaining such materials had acidic pH of less than 7; but in the improved method the electrodeposition is carried out with electrodeposition solution that is neutral (pH=7) to basic (pH of greater than 7) and includes at least one complexing agent to effectively complex one of Cu, In and Ga at this pH value.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electroplating solution for electroplating Group VAIBIIIA thin film on conductive surface comprising: solvent; Group VA material including antimony, bismuth and/or arsenic dissolved in the solvent; Group IB material including copper dissolved in the solvent; Group IIIA material including gallium and/or indium dissolved in the solvent; first complexing agent forming complex with the Group IB material; second complexing agent forming complex with the Group IIIA material; and third complexing agent forming complex with the Group VA material; where pH of solution is greater than or equal to 7.    DESCRIPTION OF DRAWING(S) - The figure shows schematic view of precursor stack formed in the electrodepositon process.    Thin film including Group VA dopant element (100)    Conductive layer (102)    Further layer (104)