TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The thickness of the non-conductive or poorly conductive layer is adapted in such a manner that the reflection of the incident or outgoing light is minimized in the desired spectral range. The non-conductive or poorly conductive layer is amorphous. The non-conductive or poorly conductive layer exhibits a sheet resistance of greater than 1000 ohms/sq, preferably greater than 10,000 ohms/sq. The non-conductive or poorly conductive layer has a higher melting point and a higher evaporation temperature than the conductive or semi-conductive layer (4). The non-conductive or poorly conductive layer consists of an oxide- or sulfide semiconductors for e.g. indium tin oxide, aluminum-doped zinc oxide, fluorine tin oxide, tin oxide, titanium dioxide, zinc sulfide or indium gallium zinc oxide, preferably it consists of an amorphous oxide semiconductors for e.g. indium tin oxide, indium gallium zinc oxide. The semi-conductive layer (4) consists of an oxide or sulfide semiconductor for e.g. indium tin oxide, aluminum-doped zinc oxide, fluorine tin oxide, tin oxide, titanium dioxide, zinc sulfide or indium gallium zinc oxide, preferably it consists of an oxide semiconductor or sulfide semiconductor with a lower evaporation temperature and melting point than the materials used in layer (2) for e.g. zinc sulfide, molybdenum trioxide, vanadium pentoxide. The metallic layer (3) is made of aluminum, silver, aurum, chromium, copper, titanium, or a combination of these metals. The metallic layer consists of an adhesion promoter layer of chromium or titanium having a thickness of at most 5 nm and an additional metal layer made of aluminum, silver, copper or aurum, where the total thickness of the two metals is greater than 8 nm. The sequence of layers between the electrode layer and the counter electrode of the components with a transparent conductive layer, which has a conductivity greater than 1e-6 S/cm, is preferably a p- or n-doped organic vapor-deposition layer with an optical band gap greater than 2 eV.