NOVELTY - A substrate (10) with a transparent conductive film has a substrate (12) consisting of glass containing an alkali, a titanium oxide layer (14) containing titanium oxide, a silicon oxide layer (16) containing silicon oxide, and a tin oxide layer (24). A tin oxide peak portion (18) exists on the silicon oxide layer, the tin oxide peak part is formed at 0.3-2 densities/ mu m2, and the diameter of bottom face of peak portion is 0.2-2 mu m. The tin oxide layer has a corrugation on surface. The substrate has intermediate oxide layer (20) consisting of an oxide different from peak portion.    USE - Substrate with transparent conductive film is used for solar cell.    ADVANTAGE - The substrate with transparent conductive film has high haze value and light reflection prevention property. The solar cell enables to produce electric power at high utilization efficiency of light.    DETAILED DESCRIPTION - A substrate with a transparent conductive film has a substrate consisting of glass containing an alkali, a titanium oxide layer containing titanium oxide as a main component formed on the substrate, a silicon oxide layer containing silicon oxide as a main component and having thickness of 15-40 nm, formed on the titanium oxide layer, and a tin oxide layer. A tin oxide peak portion exists on the silicon oxide layer, the tin oxide peak part is formed at 0.3-2 densities/ mu m2, and the diameter of bottom face of tin oxide peak portion is 0.2-2 mu m. The tin oxide layer has a corrugation on the surface. The height of corrugation is smaller than height of the tin oxide peak portion formed on the silicon-oxide layer. The substrate has an intermediate oxide layer consisting of an oxide different from tin oxide peak portion formed between the silicon oxide layer, the tin oxide layer, and the tin oxide peak portion.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of substrate with transparent conductive film.    Substrate with transparent conductive film (10)    Substrate (12)    Titanium oxide layer (14)    Silicon oxide layer (16)    Tin oxide peak portion (18)    Intermediate oxide layer (20)    Tin oxide layer (24)