NOVELTY - A thin-film amorphous silicon solar cell assembly production method involves arranging transparent conductive oxide layer, arranging a transparent conductive oxide glass layer, an amorphous silicon layer, an aluminum-doped zinc oxide layer, a polyvinyl butyral, a toughened glass layer, an aluminum-doped zinc oxide layer, an amorphous silicon layer, a transparent conductive oxide layer and a polyimide layer, where a transparent conductive oxide glass is subjected to laser scribing and plasma-enhanced chemical vapor deposition, followed by subjecting a deposited silicon layer to laser scribing.    USE - Method for producing thin-film amorphous silicon solar cell assembly    ADVANTAGE - The method enables producing thin-film amorphous silicon solar cell assembly with improved electric quantity of unit area.    DETAILED DESCRIPTION - A thin-film amorphous silicon solar cell assembly production method involves arranging transparent conductive oxide layer, arranging a transparent conductive oxide glass layer, an amorphous silicon layer, an aluminum-doped zinc oxide layer, a polyvinyl butyral, a toughened glass layer, an aluminum-doped zinc oxide layer, an amorphous silicon layer, a transparent conductive oxide layer and a polyimide layer in turn, where a transparent conductive oxide glass is subjected to laser scribing and plasma-enhanced chemical vapor deposition in turn, followed by subjecting a deposited amorphous silicon layer to laser scribing. The pressure of sputtering chamber is controlled to 1-1.5 x 10-6 mbar, followed by adding aluminum-doped zinc oxide target and a cell substrate in a space of 80-90mm apart, adding argon gas having purity of more than 4N5 and at the flow rate of 300-350slh, and sputtering an aluminum-doped zinc oxide layer having thickness of 500-600 nm. The aluminum-doped zinc oxide back electrode is subjected to laser scribing to generate electrical energy layer of cell, which is connected electrically to front portion and back portion of electrode. Positive and negative leads are welded onto the back portion of electrode, where the back portion of the cell is coated with polyvinyl butyral with a thickness of 0.6-0.8 mm and a back toughened glass plate is added, followed by performing lamination process in an autoclave. An aluminum-doped zinc oxide layer is deposited with a thickness of 500-600 nm onto one side of the toughened glass layer, followed by subjecting resultant product to laser scribing, depositing an n th, an i th and a p th amorphous silicon layer by plasma-enhanced chemical vapor deposition, and resultant product to laser scribing, where the n th amorphous silicon layer is 30-50 nm thick, the I th amorphous silicon layer is 200-300 nm thick and the p th amorphous silicon layer is 10-20 nm thick. A transparent conductive oxide layer is deposited with a thickness of 700-800 nm, followed by subjecting the layer to laser scribing, which is electrically connected with a circuit that is composed of amorphous silicon and aluminum-doped zinc oxide layer, welding an electrode lead to the transparent conductive oxide layer, and connecting to a junction box after parallel connection with a cell electrode on the front side. A transparent polyimide substrate is applied over transparent conductive oxide for packaging, followed by connecting respective leads of two cells in series, and passing into a junction box.