NOVELTY - The method involves forming a compound semiconductor layer that is formed on back surface electrode that is formed on a ribbon shaped base material (1). A transparent conductive layer is formed on buffer layer consisting of oxide semiconductor, that is formed on compound semiconductor layer. The ribbon shaped base material is driven in chamber (10) consisting of several decompression chambers corresponding to base material supply, electrode formation, buffer layer formation, transparent conductive layer formation and base material collection processes while maintaining pressure of 1pa.    USE - Method for manufacturing solar cell e.g. copper indium selenide (CIS) type solar cell, copper indium gallium selenide (CIGS) type solar cell, copper indium gallium selenium sulfur (CIGSS) type solar cell and copper zinc tin sulfide (CZTS) type solar cell for manufacturing solar cell module (all claimed) used in domestic photovoltaic power generation unit, larger scale solar cell array, and larger scale solar power system.    ADVANTAGE - The simple structured solar cell is designed easily while improving the conversion efficiency and yield. The high film forming rate is attained while reducing the waiting time between two consecutive processes.    DETAILED DESCRIPTION - A differential-pumping unit is arranged between two adjacent decompression chambers. The width of the ribbon-shaped base material is 30-mm. The compound semiconductor layer is composed of chalcopyrite-type semiconductor which consists of 1 sort of compound semiconductor material chosen from III group element or VI group element. INDEPENDENT CLAIMS are included for the following:    (1) manufacturing apparatus for solar cell; and    (2) manufacturing method for solar cell module.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the manufacturing apparatus of solar cell.    Ribbon shaped base material (1)    Chamber (10)    Nozzles (12-15)    Connection pipe (21)    Exhaust ports (31-36)