NOVELTY - Atomic layer deposition comprises: alternately delivering a vaporized precursor solution and a vaporized reaction solution to a deposition chamber; forming a monolayer of components of the precursor solution and reaction solution on the surface of a substrate in the deposition chamber; and repeating until a thin film of a predetermined thickness is formed.    USE - The atomic layer deposition method is useful: in forming barrier layers of a conductor, high-dielectric constant gate dielectric layers, high dielectric constant capacitance layers, capping layers, and metallic gate electrodes in silicon wafer processes; for building ultra thin and highly conformal layers of metal, oxide, nitride, and monolayer at a time in a cyclic deposition process; and in electronics industries such as flat panel display, compound semiconductor, magnetic and optical storage, solar cell, nanotechnology and nanomaterials.    ADVANTAGE - The thin film is free from impurity contamination. The method provides unique combinations of solution stabilization and delivery technologies, preferably allows the use of low-volatility solid atomic layer deposition precursors dissolved in solvents, where the low-volatility solid precursors are less expensive and exhibit very high boiling points, and unstable solutes can be stabilized in solution and still retain very high boiling points and the method is cost effective.    DETAILED DESCRIPTION - Depositing a atomic layer comprises: alternately delivering a vaporized precursor solution and a vaporized reaction solution to a deposition chamber; forming a monolayer of components of the precursor solution and reaction solution on the surface of a substrate in the deposition chamber; and repeating until a thin film of a predetermined thickness is formed, where the vaporized precursor solution comprises one or more low volatility precursors dissolved in a solvent, the precursor solution is delivered to a vaporizer at room temperature and vaporized without decomposition or condensation, and the vaporized precursor solution is delivered to the substrate at a constant flow rate by operating a vacuum pump associated with the vaporizer at constant pumping speed corresponding to the constant flow rate. An INDEPENDENT CLAIM is included for a thin film formed by the atomic layer deposition process, where the precursor solution is vaporized without decomposition or condensation before use in the atomic layer deposition process.