NOVELTY - The method comprises forming a III-V semiconductor layer (130) on a substrate (110), and forming an indium (In)-III-V semiconductor layer (140) on a growth surface of the III-V semiconductor layer with an In solid phase concentration above an In saturation regime by combining an In precursor, a group III element precursor different from the In precursor and a group V element precursor in a processing chamber configured with an In super-saturation regime that includes a chamber temperature that is lower than a chamber temperature corresponding to the In saturation regime.    USE - The method is useful for forming a semiconductor structure such as electronic device structures including transistors, light emitting structures such as laser diodes and light emitting diodes, light receiving structures such as waveguides, splitters, mixers, photodiodes, solar cells and solar subcells and/or microelectromechanical system structures such as accelerometers and pressure sensors, where the electronic device structures are useful for producing radiation such as visible light, which is useful for illumination applications, media storage and retrieval applications, communications applications, printing applications, spectroscopy applications, biological agent detection applications and image projection applications.    ADVANTAGE - The method is capable of effectively forming the semiconductor structure with less defect densities and high quality.    DETAILED DESCRIPTION - The method comprises forming a III-V semiconductor layer (130) on a substrate (110), forming an indium (In)-III-V semiconductor layer (140) on a growth surface of the III-V semiconductor layer with an In solid phase concentration above an In saturation regime by combining an In precursor, a group III element precursor different from the In precursor and a group V element precursor in a processing chamber configured with an In super-saturation regime that includes a chamber temperature that is lower than a chamber temperature corresponding to the In saturation regime, selecting the group V element precursor to include ammonia and trimethylindium, and selecting the group III element precursor to include triethylgallium. The In-III-V semiconductor layer has a thickness that is greater than a critical thickness. The step of forming the In-III-V semiconductor layer comprises decreasing a desorption flux of In from V-pit sidewalls of the In-III-V semiconductor layer relative to a desorption flux of indium from the growth surface of the In-III-V semiconductor layer, increasing an incorporation of In in V-pit sidewalls relative to an incorporation of In in the growth surface of the Indium-III-V semiconductor layer, increasing an In partial pressure in the processing chamber relative to an overall group III partial pressure, and forming an indium gallium nitride layer. The step of increasing the incorporation of In in the V-pit sidewalls comprises decreasing the chamber temperature, increasing a chamber pressure, and/or increasing an In partial pressure. An INDEPENDENT CLAIM is included for a semiconductor structure.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a semiconductor structure.    Substrate (110)    Semiconductor material layer (130)    Dislocations (132B)    Indium-III-V semiconductor layer (140)    V-pits. (152A)