NOVELTY - Composition comprises at least one oligosilane and/or polysilane comprising hydrogen and silicon and/or germanium, where: at least 50 mol.% of the oligosilane(s) and/or polysilane(s) have a molecular weight distribution of 700-2300 g/mol or M1lM2x M1 g/mol, in which M1 is 800 g/mol, and M2 is 0.45; and at least 75 mol.% of the oligosilane(s) and/or polysilane(s) have a chain length of 10-1000000 silicon and/or germanium units.    USE - The composition is useful in formulation, which is useful for: making a thin film transistor, capacitor, diode and/or resistor device and/or circuit, radio frequency identification tag, display backplane, sensor and/or photovoltaic device; and forming a silicon oxide film (all claimed).    ADVANTAGE - The oligosilane and/or polysilane composition can be obtained: without the need for post-polymerization; and by utilizing the metal powders as catalysts, thus minimizing chances of introducing contaminants, particularly carbon impurities.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a formulation comprising: the composition; and a solvent in which the oligosilane or polysilane is soluble;    (2) method (I) of making the oligosilane and/or polysilane, comprising: combining a hydrogen-containing compound of formulae (AnH2n+2) (A1) and/or (c-AmH2m) (A2) with a catalyst comprising an elemental Group 7-12 transition metal or its substrate-anchored derivative to form the oligosilane(s) and/or polysilane(s); and removing the catalyst from the oligosilane(s) and/or polysilane(s);    (3) method (II) of making the polysilane or polyarylsilane, comprising: combining a hydrogen-containing compound of formulae (AaH2a+2-bRb) (A3) and/or (c-AeHpeR1re) (A4) with a catalyst of formula (R3xR4 yR5xMXw) or its multinuclear or substrate anchored derivative to form a polysilane or polyarylsilane of formula (H-((AaH2a-bRb)s-(c-AeHpe-2R1re)q)-H) or its branched or crosslinked version, in which at least 75 mol.% of the polysilane or polyarylsilane has a chain length of 10-1000000 silicon and/or germanium units; and removing the catalyst from the polysilane or polyarylsilane;    (4) forming a semiconductor film from the formulation, comprising: coating or printing the formulation onto a substrate, optionally with simultaneous or immediately subsequent UV irradiation; heating the coated or printed formulation sufficiently to form an amorphous, hydrogenated semiconductor; and optionally annealing and/or irradiating the amorphous, hydrogenated semiconductor sufficiently to at least partially crystallize and/or reduce a hydrogen content of the amorphous, hydrogenated semiconductor and form the semiconductor film;    (5) making a thin film transistor, capacitor, diode and/or resistor device and/or circuit, comprising making the semiconductor film, and then forming a conductor on the semiconductor film; and    (6) forming a silicon oxide film from the formulation, comprising: forming a thin film from the formulation; and drying, curing and/or annealing the thin film in an oxidizing atmosphere.    A = Si or Ge;    n = 3-20;    m = 4-6;    a = 1-100;    R, R1 = H, aryl or (-AcH2c+1-dR2d);    R2 = aryl, alkyl or H;    c = 1-4;    e = 3-8;    p = 2-r;    r = 0-2;    M = Rh, Fe, Ru, Os, Co, Ir, Ni, Pd, or Pt;    x, y, z, w = 0-5;    (w+x+y+z) = less than or equal to 6; either    R3, R4, R5 = cyclopentadienyl, indenyl, fluorenyl, allyl, benzyl, silyl, (per)alkylsilyl, germyl, (per)alkylgermyl, hydride, phosphine, amine, sulfide, carbon monoxide, nitrile, isonitrile, siloxyl, germoxyl, hydrocarbyl, hydrocarbyloxy, hydrocarbyl phosphino, hydrocarbylamino, or hydrocarbylsulfido ligand (all optionally substituted); or    at least two of R3-R5 = form a poly dentate ligand; and    X = halo or a halo-equivalent.    Provided that sx a is greater than or equal to 6 if q is 0; q is greater than or equal to 2 if s is 0; and (s+q) is greater than or equal to 2 if both s and q are not equal to 0.