NOVELTY - The apparatus has a nozzle in an injector (35) that supplies source gas for forming film on substrate. An exhaust flow path (37) is formed between pair of wall surfaces (34,36) on both sides of injector. An exhaust gas inlet port (34a) is formed in substrate vicinity of wall surface (34) of injector. The distance between exhaust gas inlet port and the injector in the center of the width direction of the exhaust flow path is larger than distance between exhaust gas inlet port and injector in both ends of the width direction.    USE - Chemical vapor deposition (CVD) film making apparatus such as atmospheric pressure thermal CVD apparatus for forming transparent electrode film on soda-glass substrate used in manufacture of photoelectric conversion apparatus such as tandem-type silicon system solar cell for solar cell panel. Can also be used in manufacture of crystalline silicon solar batteries including amorphous silicon solar cell and microcrystal silicon solar cell, the silicon-germanium solar cell and triple mold solar cell.    ADVANTAGE - The adhered particle number can be suppressed by setting distance of the space in the center of the width direction of inlet port of an exhaust flow path larger than the distance of the space direction in the edge of the width direction. Hence the deterioration of distribution of the haze rate of a film can be suppressed by suppressing the adhering particle number. The periodic maintenance of an injector and an exhaust flow path of the CVD film making apparatus can be reduced. Hence operation rate of film making apparatus can be improved and film forming productivity can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for film forming method.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the chamber of CVD film making apparatus. (Drawing includes non-English language text)    Chamber (21)    Wall surfaces (34,36)    Exhaust gas inlet port (34a)    Injector (35)    Exhaust flow path (37)