NOVELTY - The method comprises selectively applying a hot melt etch resist to an anti-reflective coating on a semiconductor substrate having a PN junction, applying an etchant to exposed portions of the anti-reflective coating of the semiconductor substrate to remove the exposed portions of the anti-reflective coating and selectively exposing a front side of the semiconductor substrate, and applying a stripper comprising potassium carbonate and potassium silicate to the semiconductor substrate to remove the hot melt etch resist from the anti-reflective coating.    USE - The method is useful for stripping hot melt etch resists from semiconductors for manufacturing photovoltaic cells or solar cells.    ADVANTAGE - The method is capable of simply and effectively stripping the hot melt etch resists from the semiconductors with high sensitivity and reduced power consumption thus improving the efficiency of the photovoltaic cells.    DETAILED DESCRIPTION - The method comprises selectively applying a hot melt etch resist to an anti-reflective coating on a semiconductor substrate having a PN junction, applying an etchant to exposed portions of the anti-reflective coating of the semiconductor substrate to remove the exposed portions of the anti-reflective coating and selectively exposing a front side of the semiconductor substrate, applying a stripper comprising potassium carbonate and potassium silicate to the semiconductor substrate to remove the hot melt etch resist from the anti-reflective coating at a room temperature to 70 degrees C, and depositing a metal on the selectively exposed front side of the semiconductor substrate to form current tracks. The semiconductor substrate comprises PN junction, an anti-reflective coating on the front side of the substrate, and an electrode comprising aluminum placed on a back side of the semiconductor substrate. The stripper further comprises antifoaming agents. A stripper composition has a pH of 8-12. An INDEPENDENT CLAIM is included for a stripping composition.