NOVELTY - The photovoltaic material has at least three PIN semiconductor junctions stacked in tandem, in which P, I and N layers of the junctions comprise of hydrogenated monocrystalline silicon contained in an amorphous silicon matrix. Each of the P and N layers of each PIN junction has a specific composition. The P layers of all junctions has boron as doping agent. The P layer of second junction has arsenic. The P layer of third junction has gallium. The N layers of all junctions has phosphorus as doping agent. The N layer of second junction has gallium. The N layer of third junction has arsenic.    USE - PIN-type multijunction photovoltaic material used in photovoltaic ceramic device (claimed). Can be used in processing direct solar radiation into electrical energy, in providing semiconductor materials for energy integration in solar cells, in production of photovoltaic devices with ceramic base or ceramic products used in construction industry, and in screening of tiles, panel or building facade.    ADVANTAGE - Provides a PIN-type multijunction photovoltaic material that has silicon-based amorphous crystalline or amorphous silicon with microcrystalline cores, and that is suitable for integration on a ceramic substrate to form a solar panel with improved solar energy efficiency. Uses doping agents that improve performance and stability of the PIN junctions, thus improving the yield and efficiency of the photovoltaic material. Avoids migration of harmful chemical elements from the ceramic substrate to the photovoltaic material mounted on the ceramic substrate. Provides a photovoltaic device that has guaranteed watertight property, improved durability, and lasting layer resistance without jeopardizing properties of the photovoltaic device by ionic diffusion.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) the use of the photovoltaic ceramic device;    (2) a photovoltaic ceramic device manufacture method; and    (3) the enamel formulation of the photovoltaic material.