NOVELTY - A silica-type film-forming composition contains silicon compound obtained by hydrolytically condensing hydrolyzable group-containing compound (I), a solvent and surface-control agent. The solvent contains solvent (s1) having boiling point of 80-160 degrees C, and solvent (s2) having boiling point of 180-230 degrees C. The mass ratio of content of solvent (s1) is 0.3-0.5 with respect to sum total content of solvent (s1) and solvent (s2), when solvent (s1) having boiling point is 80-100 degrees C.    USE - Composition is used for forming silica-type film for semiconductor device used for solar cell system (all claimed). Uses include but are not limited to transistor, thermistor, varistor, thyristor, dynamic random access memory, charge coupled device, light-emitting diode, hybrid integrated circuit, optical waveguide and photoresist.    ADVANTAGE - The silica-type film-forming composition has quick drying property.    DETAILED DESCRIPTION - A silica-type film-forming composition contains silicon compound obtained by hydrolytically condensing hydrolyzable group-containing compound of formula: R1nSiX4-n (I), a solvent and surface-control agent. The solvent contains solvent (s1) having boiling point of 80-160 degrees C, and solvent (s2) having boiling point of 180-230 degrees C. The mass ratio of content of solvent (s1) is 0.3-0.5 with respect to sum total content of solvent (s1) and solvent (s2), when solvent (s1) having boiling point is 80-100 degrees C. The mass ratio of content of solvent (s1) is 0.4-0.6 with respect to sum total content of solvent (s1) and solvent (s2), when solvent (s1) having boiling point is 100-130 degrees C. The mass ratio of content of solvent (s1) is 0.5-0.7 with respect to sum total content of solvent (s1) and solvent (s2), when solvent (s1) having boiling point is 130-160 degrees C.    R1=1-20C organic group;    X=hydrolyzable group;and    n=0-2.    INDEPENDENT CLAIMS are included for the following:    (1) formation of silica-type film; and    (2) semiconductor device.