NOVELTY - The method comprises melting a liquid phase epitaxial material within a pocket, directing the liquid phase epitaxial material onto an assembly substrate (130) using a manifold, retaining the assembly substrate with a first frame portion, retaining a seed substrate adjacent to the assembly substrate such that the liquid phase material is introduced into a template within the assembly substrate and contacts a surface of the seed substrate through openings of the assembly substrate, and controlling melting and cooling of the liquid phase epitaxial material within the assembly substrate.    USE - The method is useful for forming an epitaxial thin film, which is useful in a substrate of a semiconductor device including a solar cell, a light emitting diode, radio frequency and wireless systems, microwave and millimeter-wave radars, satellite communication systems, lasers, sensors, optical data storage systems and fiber optics systems.    ADVANTAGE - The method is capable of economically and easily forming the epitaxial thin film with high-yield and desired geometry, structure and thickness.    DETAILED DESCRIPTION - The method comprises melting a liquid phase epitaxial material within a pocket, directing the liquid phase epitaxial material onto an assembly substrate (130) using a manifold, retaining the assembly substrate with a first frame portion, retaining a seed substrate adjacent to the assembly substrate such that the liquid phase material is introduced into a template within the assembly substrate and contacts a surface of the seed substrate through openings of the assembly substrate, controlling melting and cooling of the liquid phase epitaxial material within the assembly substrate to form an first thin film epitaxial layer, controlling a temperature of the liquid phase epitaxial material while or before moving the first frame portion and/or a second base portion to separate the epitaxial layer from the seed substrate, processing the assembly substrate and thin film epitaxial layer as an integrated epitaxial packaged structure within a semiconductor processing apparatus to form active devices on the assembly substrate and/or thin film epitaxial layer, forming second separate thin film epitaxial layers on the first thin film epitaxial layer, forming a spacer positioned adjacent to the assembly substrate and above a crystalline substrate (110), controlling heating and cooling of the liquid phase material, and controlling a side profile of the openings to be vertical, step recessed or sloped to any desired angle. The first thin film epitaxial layer: is transferred as a distinct layer from the seed substrate; is grown laterally across a top surface of the assembly substrate; includes a graded composition throughout a thickness direction of the assembly substrate; has a multidimensional structure including lines and via interconnects; and forms part of a p-n junction. The liquid phase epitaxial material is adapted with thermal characteristics matching the assembly substrate. The separating step is achieved by a shearing action and by a chemical etchant. The first and second separate thin film epitaxial layers include different dopant species. The crystalline substrate is re-used for growing the second epitaxial layer with the assembly substrate after the first epitaxial layer is separated.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a crystalline substrate, an assembly substrate and a sacrificial layer or metamorphic buffer layer grown on a crystalline substrate.    Crystalline substrate (110)    Surface of crystalline substrate (115)    Metamorphic buffer layer (120)    Assembly substrate (130)    Windows. (140)