NOVELTY - A solar cell (100) comprises a semiconductor portion (102); a graphene layer (112) disposed on a first surface of the semiconductor portion; and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and fingers extending from the bus bar portion. The first surface of the semiconductor portion includes a p-type doped region (108) and second surface having an n-type doped region (104).    USE - As a solar cell (claimed) such as graphene solar cells.    ADVANTAGE - The transparency of the transparent conducting overlayer (TCO) layer is greater than or equal to 85% with a resistance per square of less than 10 Omega . Though the graphene layer satisfies the desired transparency parameters for the cell, the resistance of the graphene layer without the conductive bus layer is greater than desired. Fabricating the conductive bus layer on the graphene layer to form the TCO portion reduces the resistivity of the TCO portion to be within the desired resistance parameters while maintaining the desired transparency parameters. The use of graphene in the cell allows the cell to be flexible such that the cell may conform and be applied to curved surfaces.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for forming a solar cell involving forming a graphene layer on a metallic film; forming a polymethyl-methacrylate (PMMA) layer on the graphene layer; removing the metallic film from the graphene layer; disposing the graphene layer and the PMMA layer on a first surface of a semiconductor portion such that the graphene layer contacts the first surface of the semiconductor portion; removing the PMMA layer to expose the graphene layer; forming a first conductive layer on the exposed graphene layer; and removing a portion of the first conductive layer to pattern a bus bar and fingers in the first conductive layer.    DESCRIPTION OF DRAWING(S) - The figure shows side cut-away view of a solar cell.    Solar cell (100)    Semiconductor portion (102)    N-type doped region (104)    P-type doped region (108)    Metallic layer (110)    Graphene layer (112)    Conductive bus layer (114)