TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: In the method, electroplating copper onto the at least one surface under conditions in which a ratio of a cathode current density at the surface to an anode current density at the anode is at least 20 comprises selecting a strength and a concentration of the at least one suppressor agent, and a surface area of the anode so that the ratio is established during the act of electroplating copper. The electroplating copper comprises applying a time-varying voltage between the anode and the at least one surface of the substrate. The step (a) comprises: forming the electrochemical cell to include the at least one surface, the anode, and the electroplating solution having dissolved copper which is present at a concentration of 50-100 g/l; and immersing the substrate in the electroplating solution. The method for electroplating copper further comprises: linearly oscillating the substrate in the electroplating solution during the act of electroplating copper; and rotating the substrate in the electroplating solution during the act of electroplating copper. The step of electroplating copper comprises depositing the copper onto the at least one surface of the substrate as a substantially dendrite-free film at a deposition rate of at least 6 mu m/minute. Preferred Components: In the step (b) comprises electroplating the copper onto the at least one surface under conditions in which the ratio is 20-100, preferably 60-100. The anode comprises an inert anode, and electroplating copper onto the at least one surface comprises electroplating the copper from dissolved copper in the electroplating solution. The anode comprises a copper-containing anode, and electroplating copper onto the at least one surface comprises electroplating the copper provided from the copper-containing anode. The anode comprises a copper-containing anode. The copper-containing anode comprises a porous mass of copper particles, grooved body comprising copper, porous mass of sintered copper-containing particles or mesh comprising copper. The at least one suppressor agent of the electroplating solution comprises at least one of surfactant, chelating agent, leveler agent or wetting agent. The electroplating solution comprises at least one accelerator agent, where the at least one accelerator agent is substantially free of at least one type of alkali element. The at least one suppressor agent provides a suppression strength of at least 5. EXAMPLE - Titanium adhesion layer (20 nm thick) was deposited onto a surface of a single-crystal silicon wafer, followed by depositing copper seed layer (100 nm thick) onto the adhesion layer. The titanium adhesion layer and copper seed layer were each deposited using physical vapor deposition. A photoresist was applied to the seed layer and photo lithographically patterned to form a mask layer having many openings in it that exposed portions of the seed layer. An electrochemical cell was formed by immersing the silicon wafer including the mask layer in an electroplating solution with an anode. The anode of the electrochemical cell was made from a grooved copper anode. The electroplating solution (comprised of composition contained of copper (60 g/l), sulfuric acid (60 g/l), and hydrochloric acid (50 g/l), additives (comprised eMAT RB10 (RTM: Not defined) (accelerator/brightner) (2 ml/l), eMAT RS14 (RTM: Not defined) suppressor (20 ml/l) and eMAT RL6 (RTM: Not defined) leveler (5 ml/l))). Copper was electroplated into many openings of mask layer and on exposed, respective surfaces of seed layer by applying a voltage between the anode and silicon wafer to impress a cathodic direct current density of 300 mA/cm2 to form many bumps. The ratio of the current density at the cathode to the current density at the anode was 40. The copper was deposited at a rate of 6 mu m/minute.