TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method comprises: either the steps (a)-(c) as above per se, (d1) providing plasma, gases and chemicals required for purifying in the high-speed jet flow to the surface of the silicon melt through the independent injecting device, (e1) raising the crucible via the crucible manipulating device within the vessel to keep a constant level of the liquid surface and to maintain heating of the silicon material at the solidus-liquidus interface, (f1) removing one or more impurities from the melted material to form a higher purity silicon material in the crucible, and (g1) outputting an inert gas through a nozzle region to cause a dimple region within a vicinity of the center region of the melted material; or the step (a)-(c) as above per se, (d2) guiding hot gas rising from the surface of the silicon melt through a guiding element configured with a carrier gas to cause a portion of evaporated melted material to return to the melted material, and (e2) removing one or more impurities from the melted material to form a higher purity silicon material in the crucible, where the two or more arc heaters are configured with a focus point below the surface of the melted material.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: The method further comprises transporting the crucible through the crucible manipulating device in cooperation with a crucible transporting device and a crucible conveyor belt at the end of the silicon purification process. The nozzle region is coupled to an argon gas source, where the nozzle region comprises a ceramic material. The dimple region provides an increased surface region for a plume to interact with the melted material, where the dimple region has a depth of at least one centimeter. The crucible is provided within a vessel and further comprises raising the crucible via a crucible manipulating device within the vessel to keep a constant level of the liquid surface and to maintain heating of the silicon material at the solidus-liquidus interface. Preferred Components: The nozzle region comprises nozzles, and the inert gas comprises an argon gas characterized by a flow rate suitable to form the dimple region comprising a plurality of recessed regions each of which is separated by an elevated region. The melted material comprises: a viscosity of 0.7 pascal-second; a silicon material and a phosphorus species; and a resulting phosphorus species of 0.1 ppm and less.