NOVELTY - Silicon-based photovoltaic device produced by electrical means, comprises: silicon substrate (20) having a first side and a second side; field-induced emitter (52) comprising an inversion layer; at least one selective emitter; first insulating film; at least one contact region (50a, 50b) to the selective emitter; field-induced back-surface field (BSF) region (54); at least one selective BSF region; second insulating film that is formed on the second side of the silicon substrate and contains an electrical charge of a second sign; and at least one contact region to the selective BSF region.    USE - The silicon-based photovoltaic device is useful in solar cells.    ADVANTAGE - The device has high efficiency, reduced cost, and increased throughput in the field of solar cell fabrication.    DETAILED DESCRIPTION - Silicon-based photovoltaic device produced by electrical means, comprises: silicon substrate (20) having a first side and a second side; field-induced emitter (52) that is formed in the silicon substrate on the first side and comprises an inversion layer; at least one selective emitter formed in the silicon substrate on the first side of it; first insulating film that is formed on the first side of the silicon substrate and contains an electric charge of a first sign intended for generating the inversion layer; at least one contact region (50a, 50b) to the selective emitter; field-induced back-surface field (BSF) region (54) that is formed in the silicon substrate on the second side and comprises an accumulation layer; at least one selective BSF region formed in the silicon substrate on the second side of it; second insulating film that is formed on the second side of the silicon substrate and contains an electrical charge of a second sign, which is opposite to the first sign and is intended for generating the accumulation layer; and at least one contact region to the selective BSF region.    DESCRIPTION OF DRAWING(S) - The figure shows a sectional view of the device formed after completion of the pulse electrical treatment.    Silicon substrate (20)    Selective emitters (24e, 24f)    Contact regions (50a, 50b)    Field-induced emitter (52)    Field-induced back-surface field region (54)