TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The step of decomposing the single source precursor in the presence of the thiol comprises: exposing the single source precursor to microwave radiation in the presence of the thiol; exposing the single source precursor to a temperature of 60-360 degrees C in the presence of the thiol; decomposing the single source precursor in the presence of at least one of 1,2-ethanedithiol and 3-mercaptopropionic acid (preferred); and dissolving the single source precursor in a solvent to form a solution; combining the solution with the thiol or thiol acid to form a reaction mixture; exposing the reaction mixture to microwave radiation to heat the reaction mixture to a temperature of at least 160 degrees C; and decomposing at least one of complexes comprising (triphenyl-P)2Cu( mu -S-ethyl)2In(S-ethyl)2 and (triphenyl-P)2Cu( mu -S-ethyl)2Ga(S-ethyl)2 in the presence of the thiol. The step of decomposing the precopolymer of the single source precursor comprises decomposing the single source precursor in the presence of 3-mercaptopropionic acid. The step of exposing the reaction mixture to microwave radiation to heat the reaction mixture to a temperature of at least 160 degrees C comprises: exposing the reaction mixture to a temperature of at least 200 degrees C to form a mixture of particles in the chalcopyrite phase and the wurtzite phase; and exposing the reaction mixture to a temperature of at least 220 degrees C to form a particles in the wurtzite phase. The step of forming particles comprising a I-III-VI2 material in a wurtzite phase comprises: dissolving the single source precursor in a solvent to form a solution, combining the solution with the thiol to form a reaction mixture, and exposing the reaction mixture to microwave radiation to heat the reaction mixture to a temperature of at least 160 degrees C; or forming the particles having a flat, or hexagonal shape, having an average length of 500-400 nm and an average thickness of 0.5-200 nm. The method-1 further comprises forming particles comprising a I-III-VI2 material in a chalcopyrite phase, where the step forming comprises: subjecting the single source precursor to carbon dioxide; decomposing the single source precursor in the carbon dioxide; and forming the particles comprising the I-III-IV2 material in the chalcopyrite phase from one or more products of the decomposition of the single source precursor. The step of forming particles comprising a I-III-VI2 material in a chalcopyrite phase comprises forming the particles having an average particle size of 5-200 nm. The step of depositing the particle matrix over at least a portion of a substrate comprises depositing the particle matrix using a printing process, an ink jet process or spin coating process. The step of applying particles comprising a I-III-VI2 material in a wurtzite phase comprises applying a mixture of particles of the I-III-VI2 material in the wurtzite phase and particles of the I-III-VI2 material in a chalcopyrite phase comprising applying the mixture of particles, where an average diameter of the particles of the I-III-VI2 material in a chalcopyrite phase substantially equal to an average thickness of the particles the I-III-VI2 material in the wurtzite phase. The method-2 further comprises applying a pressure to the particles to promote adhesion between the particles and the conductive material. The step of annealing the particles to convert the I-III-VI2 material in the wurtzite phase to a chalcopyrite phase comprises exposing the particles to a temperature of 300-600 degrees C. EXAMPLE - (Triphenyl-P)2Cu( mu -S-ethyl)2-In(S-ethyl)2 (6 g) or (triphenyl-P)2Cu( mu -S-ethyl)2Ga(S-ethyl)2 (5.71 g) was dissolved in benzyl acetate (40 ml) followed by addition of 3-mercaptopropionic acid (8 ml) in a vessel. The benzyl acetate and 3-mercaptopropionic acid were obtained. The solution was capped and stirred for 5 minutes at room temperature. The reaction mixture was placed in a extraction system. The reaction mixture was then irradiated with microwave radiation to provide reaction temperatures at 160-240 degrees C for 1 hour. Upon completion, the reaction mixture was cooled to room temperature to yield precipitation of CuInS2 and CuGaS2 chalcopyrite and wurtzite particles.