TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method, the first thermal treatment is performed: in a reducing atmosphere; and at a temperature of 300-2000 degrees C for 0.001-1000 hours. The method further comprises: performing a cooling process at a rate of 10-100 degrees C per minute after the first thermal treatment; performing a second thermal treatment after the first thermal treatment and the cooling process; forming a graphitization catalyst layer (13) on the crystalline graphene grown on the inorganic substrate; and performing a second thermal treatment on the inorganic substrate with the crystalline graphene and graphitization catalyst layer on it, so that crystallinity of the crystalline graphene is increased. Preferred Components: The inorganic substrate: comprises at least one of a metal oxide based substrate, a silica based substrate, a boron nitride based substrate or a silicon based substrate; has at least one of a monocrystalline structure, a polycrystalline structure or an amorphous structure; has a thickness of 10 nm to 100 mu m; and comprises a base including at least one of a silicon-based crystalline or a sapphire crystalline, and a thin film disposed on the base, where the thin film has a thickness of 10-1000 nm. The graphitization catalyst comprises at least one of nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, tantalum, titanium, tungsten, uranium, vanadium or zirconium., where the graphitization catalyst layer has a thickness of 100-1000 nm. The crystalline graphene has a D-band to G-band peak intensity ratio of less than or equal to 0.5, preferably 0.2-0.001.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The vapor carbon supply source comprises at least one of carbon monoxide, methane, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene or toluene. EXAMPLE - Silicon dioxide thin film having a thickness of 300 nm was formed on a silicon substrate by using thermal oxidation. The resultant silicon substrate with the silicon dioxide thin film was then was placed in a chamber, and thermally treated at 11000 degrees C for 10 minutes by using an inductive heating source (a first thermal treatment) while hydrogen gas and nitrogen gas were supplied into the chamber at 5 standard cubic centimeters/minute (sccm) and 4970 sccm, respectively. Then acetylene gas was further injected into the chamber at 25 sccm for 10 minutes, to grow the graphene. Then the inductive heating source was removed from the chamber, which was then naturally cooled to obtain the crystalline graphene formed on the silicon dioxide thin film.