TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step of forming the metal interconnection involves: (a) etching the porous, low-k dielectric layer to form an opening in it, thereby exposing a portion of the substrate; (b) forming a barrier layer on the exposed surfaces of the substrate and the porous, low-k dielectric layer; (c) forming a metal layer on the barrier layer; and (d) removing a portion of the metal layer and a portion of the barrier layer, thereby exposing a top surface of the porous, low-k dielectric layer and forming a metal interconnection. The pressure in the chamber is 4-10 Torr, the density of a RF plasma power is 0.7-2.0 W/cm2, and an electrode gap is 200-1000 mm. The method of manufacturing a semiconductor device involves introducing an organosilicon precursor, an oxidant and at least one porogen into a chamber comprising a substrate and heating the substrate to a deposition temperature of 100 to less than 245 degrees C, thereby forming a porogen-containing dielectric layer on the substrate; and removing at least a portion of the at least one porogen from the porogen-containing dielectric layer to form a porous, low-k dielectric layer, where the oxidant is introduced into the chamber at a flow rate that is less than or equal to 0.7 times that of the organosilicon precursor, and where the organosilicon precursor is of formula (I). The step of forming the dielectric layer involves exciting the organosilicon precursor with plasma using plasma enhanced chemical vapor deposition (PECVD) method. The porogen is removed from the porogen-containing dielectric layer using UV-ray irradiation (60), e-beam irradiation, and/or thermal treatment. The method of manufacturing semiconductor device involves introducing an organosilicon precursor and at least one porogen into a chamber comprising a substrate and heating the substrate to a deposition temperature of 100 to less than 245 degrees C, thereby forming a porogen-containing dielectric layer on the substrate; and removing at least a portion of the at least one porogen from the porogen-containing dielectric layer to form a porous, low-k dielectric layer, where no oxidant is introduced into the chamber, and where the organosilicon precursor is of formula (I) (preferably Si(Me)2(OEt)-CH2-SiH(OEt)2). The substrate is heated to a deposition temperature of about 220 degrees C. Preferred Components: The oxidant is selected from O2, O3, N2O and CO2. The porous, low-k dielectric layer comprises Si-O-Si network with Si-O-Si backbone and a carbon bridge structure (-Si-(CH2)n-Si-). The ratio of bridging carbons to methyl groups is 0.5:1 to 3:1. The precursor comprises organosilicon precursor of formula Si(OEt)2(Me)-CH2-CH2-Si(OEt)2(Me), SiH(OEt)(Me)-CH2-CH2-Si(OEt)2(Me), SiH(OEt)(Me)-CH2-CH2-SiH(Me)(OEt), Si(Me)2(OEt)-CH2-CH2-Si(OEt)(Me)2, SiH(Me)(OEt)-CH2-CH2-Si(Me)2(OEt), SiH(Me)2-CH2-CH2-SiH(OEt)2, Si(Me)2(OEt)-CH2-CH2-SiH(OEt)2, Si(OEt)2(Me)-CH2-Si(OEt)2(Me), Si(Me)2(OEt)-CH2-Si(Me)2(OEt), Si(OEt)(Me)2-CH2-SiH(OEt)2, SiH(OEt)(Me)-CH2-Si(OEt)2(Me), SiH(Me)2-CH2-SiH(OEt)2, SiH(Me)(OEt)-CH2-SiH(OEt)(Me) or SiH(Me)(OEt)-CH2-Si(Me)2(OEt).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The porogen comprises a hydrocarbon compound. The at least one porogen comprises alpha -terpinene. Preferred Definitions:    n=1 or 2;    R1-R6=H, methyl, methoxy or ethoxy.    When R1 to R3 include one hydrogen, one methyl and one alkoxy, R4 to R6 include one methyl and two alkoxy; when R1 to R3 include one hydrogen, one methyl, and one alkoxy, R4 to R6 include one hydrogen, one methyl and one alkoxy; when R1 is methyl, R2 is methoxy or ethoxy, R3 is methoxy or ethoxy, R4 is methyl, R5 is methoxy or ethoxy and R6 is methoxy or ethoxy.    EXAMPLE - No suitable example given.