NOVELTY - A gas-barrier film (2) has polysilazane application layer formed on surface(s) of base material (6). Polysilazane application layer is converted into barrier layer by irradiating using excimer lamp. The ratio of oxygen and silicon in arbitrary points of 5% of surface side of the depth direction of the barrier layer is more than 1 to 2.3, measured by X-ray photoelectron spectroscopy. Ratio of oxygen and silicon in arbitrary points of 95% of the base-material side of depth direction of barrier layer is more than 0.2 to 2, measured by X-ray photoelectron spectroscopy.    USE - Gas-barrier film is used for organic photoelectric conversion element, organic electroluminescent element (all claimed), liquid crystal display element and packaging material of foodstuff, pharmaceuticals and industrial products.    ADVANTAGE - The gas-barrier film has excellent flexibility, gas-barrier property and bending tolerance, and reduced generation of process contamination.    DETAILED DESCRIPTION - A gas-barrier film has polysilazane application layer formed on surface(s) of a base material. The polysilazane application layer is converted into barrier layer by irradiating using excimer lamp. The ratio of oxygen and silicon in the arbitrary points of 5% of the surface side of the depth direction of the barrier layer is more than 1 to 2.3, measured by X-ray photoelectron spectroscopy. The ratio of oxygen and silicon in the arbitrary points of 95% of the base-material side of the depth direction of the barrier layer is more than 0.2 to 2, measured by X-ray photoelectron spectroscopy. The ratio of nitrogen with respect to silicon in the whole region of the depth direction of the barrier layer is 0-0.8, measured by X-ray photoelectron spectroscopy. An INDEPENDENT CLAIM is included for manufacture of gas-barrier film. The dew point of gas-barrier film during polysilazane coating and solvent removal process is 5-15 degrees C. The dew point of gas-barrier film during curing process is -100 degrees C to 10 degrees C. The dew point of gas-barrier film during excimer modification is -100 degrees C to 0 degrees C.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of organic electronic device.    Organic electronic device (1)    Gas-barrier film (2)    Electrodes (3,5)    Organic functional layer (4)    Base material (6)