NOVELTY - Improving solar battery diffusion technology efficiency involves: placing cleaned and dried silicon wafer in diffusion furnace and adding nitrogen; treating silicon slice in low temperature pre-oxidizing diffusion furnace by adding oxygen; performing pre-diffusing treatment at lower temperature by filling with phosphorus oxychloride for nitrogen; stopping filling with phosphorus oxychloride for nitrogen and adding oxygen; performing high temperature propelling diffusion by cutting off nitrogen and oxygen; low temperature annealing by introducing nitrogen; and taking out silicon chip.    USE - For improving solar battery diffusion technology efficiency (claimed).    ADVANTAGE - The method improves solar battery diffusion technology efficiency by enhancing diffusion effect of phosphorus absorption, as silicon wafer has low carrier life time. The process enhances gettering effect of phosphorus diffusion technology.    DETAILED DESCRIPTION - Method for improving solar battery diffusion technology efficiency, involves: treating surface of silicon wafer for cleaning and drying; placing silicon slice obtained into diffusion furnace, and inletting nitrogen; treating silicon slice in low temperature pre-oxidizing diffusion furnace for heating and introducing oxygen, for 3-10 minutes; performing pre-diffusing treatment at lower temperature, by filling with phosphorus oxychloride (POCl3) for nitrogen and treating at specific temperature for 10-40 minutes; stopping filling with POCl3 for nitrogen and introducing oxygen, at specific temperature for 5-10 minutes; performing high temperature propelling diffusion by cutting off nitrogen and oxygen, at specific diffusion temperature for first period of time of 10-40 minutes; low temperature annealing by introducing nitrogen for 60-120 minutes; and taking out silicon chip. The temperature in step of placing silicon slice into diffusion furnace, and inletting nitrogen is 780-820 degrees C. The temperature in step of treating silicon slice in low temperature pre-oxidizing diffusion furnace and introducing oxygen is 800-840 degrees C. The pre-diffusing temperature in step of filling with POCl3 for nitrogen is 800-840 degrees C. The oxygen temperature in step of distributing oxygen is 800-840 degrees C. The temperature in performing high temperature propelling diffusion is 820-860 degrees C. The temperature in low temperature annealing is reduced to 600-700 degrees C, where temperature reducing speed is 10 degrees C/minute.