NOVELTY - The structure has an intrinsic gallium arsenide layer (904) placed over an amorphous n-type silicon layer (902), where the arsenide layer comprises non-oriented polycrystalline intrinsic gallium arsenide and oriented polycrystalline intrinsic gallium arsenide. The arsenide layer includes a surface having random distribution of circular cross-section protrusions projecting away from the surface of the arsenide layer. The protrusions have average diameter and average height of about 50 nanometer. An amorphous p-type silicon layer (906) is placed over the arsenide layer.    USE - PIN structure for use in a photovoltaic device (claimed) i.e. crystalline silicon-based solar cell, of a non-oriented/oriented polycrystalline semiconductor device e.g. Group-III intrinsic gallium arsenide semiconductor device, Group-IV intrinsic gallium arsenide semiconductor device and Group-V intrinsic gallium arsenide semiconductor device.    ADVANTAGE - The structure utilizes less sophisticated equipment, and is less in time intensive. The structure reduces or prevents contamination from organic molecules. The structure provides cooling rate for substrate to facilitate the formation of the protrusions on surfaces of the intrinsic gallium arsenide layer so as to impart varying degrees of roughness to the layer and increase light absorption of the layer by reducing reflection of incoming light. The intrinsic gallium arsenide layer exhibit different unique structural properties so as enhance light absorption, collection efficiency and charge carrier mobility in an efficient and cost-effective manner. The intrinsic gallium arsenide layer is prevented from suffering by light-induced degradation.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a photovoltaic device comprising a voltage source.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a photovoltaic device.    Amorphous n-type silicon layer (902)    Intrinsic gallium arsenide layer (904)    Amorphous p-type silicon layer (906)    Intrinsic gallium arsenide particles (908)    Electrodes (910, 912)