NOVELTY - The thin film photovoltaic device (10) comprises a substrate (15), a first fluorinated photovoltaic layer disposed over a first area of the substrate, a second photovoltaic layer comprising amorphous silicon and fluorine, a non-fluorinated primer layer (20) disposed between the substrate and the photovoltaic layer, intervening layers disposed between the primer layer and the substrate, a p-type semiconducting layer disposed between the first photovoltaic layer and the second photovoltaic layer, and an n-type semiconducting layer disposed between the first and second photovoltaic layers.    USE - Used as a thin film photovoltaic device.    ADVANTAGE - The thin film photovoltaic device exhibit high carrier mobility, improved photovoltaic conversion efficiency and quantum efficiency, low porosity, little or no Staebler-Wronski degradation, and low concentrations of electronic and chemical defects, and allows for the ultrafast formation of silicon-containing amorphous semiconductors from fluorinated precursors in a microwave plasma process.    DETAILED DESCRIPTION - The thin film photovoltaic device (10) comprises a substrate (15), a first fluorinated photovoltaic layer disposed over a first area of the substrate, a second photovoltaic layer comprising amorphous silicon and fluorine, a non-fluorinated primer layer (20) disposed between the substrate and the photovoltaic layer, intervening layers disposed between the primer layer and the substrate, a p-type semiconducting layer disposed between the first photovoltaic layer and the second photovoltaic layer, and an n-type semiconducting layer disposed between the first and second photovoltaic layers. The photovoltaic layer comprises an element such as fluorine for reacting with the substrate, the primer layer and the intervening layers, and an amorphous material, and directly contacts the primer layer. The primer layer: is positioned for preventing reaction of the element with the first area of the substrate; lacks the element for reacting with the substrate; has a thickness of 1800 Angstrom ; comprises an amorphous material; and differs in composition from the photovoltaic layer. The substrate comprises a metal, a plastic and glass. The fluorine has an atomic concentration of 0.5-4%. The intervening layers include an n-type layer or a p-type layer. The element for reacting with the substrate is adapted for etching the substrate. The first and second photovoltaic layers are an intrinsic semiconductor. The first photovoltaic layer is disposed between the substrate and the second photovoltaic layer. The n-type or p-type semiconducting layer is disposed between the substrate and the first photovoltaic layer, and is disposed over the second photovoltaic layer. An INDEPENDENT CLAIM is included for a photovoltaic material comprising amorphous silicon.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a photovoltaic device structure.    Photovoltaic device (10)    Substrate (15)    Primer layer (20)    Active layer. (25)