TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The substrate is ceramic, mica, macromolecule plastic, or glass sheet.    TECHNOLOGY FOCUS - METALLURGY - Preferred Method: The method may comprise: (a) cleaning the substrate by physical vapor deposition method or electrochemical deposition method, depositing a back electrode layer and copper film, and obtaining the linear copper film; (b) in step (a), the substrate is copper film into a reaction container, introducing the mixed gas of oxygen and hydrogen sulfide, controlling the reaction temperature, the copper film into cuprous sulfide or copper sulfide nanowire array through gas-solid reaction to prepare the combined sulfide or cuprous copper sulfide nanowire array in hydrochloric acid aqueous solution to oxide layer on the surface by the physical vapor deposition method, where a cuprous sulfide or copper sulfide nanowire array deposition containing Z element to obtain p-type semiconductor nanowire array absorption layer, where Z=2-9; and (c) the oil sample in the heating furnace, under the protection of argon gas protection, where hydrogen selenide or hydrogen sulfide atmosphere to selenylation or vulcanization, controlling at 300-600 degrees C for 0.1-3 hours, p-type semiconductor copper indium gallium. In step (a), the physical vapor deposition method is magnetron sputtering, thermal evaporation, electron beam evaporation method, a laser beam evaporation method or selenylation method. The electrochemical deposition is pulse electrochemical deposition, chemical deposition or constant voltage constant current electrochemical deposition. In step (b), the mixed gas of hydrogen sulfide and oxygen is 1:100-1:0; the reaction is controlled at 10-200 degrees C; the solid reaction time is 1-500 hours; and the concentration of the hydrochloric acid aqueous solution is 0.001-2 mol/L. In step (b), the p-type semiconductor nanowire array layer is formed from semiconductor alloy of formula CuxJ(1-x)Ey(DzS(1-z))2; the physical vapor deposition is sputtering, thermal evaporation method, electron beam evaporation method or laser evaporation method. The thermal evaporation method is evaporating indium-gallium, evaporating copper, and evaporating indium-gallium; or evaporating gallium-selenium, evaporating indium-selenium, evaporating copper; or evaporating indium selenium, evaporating gallium selenium, or evaporating copper selenium; or evaporating indium-gallium-selenium, copper, or selenium; and the sputtering target uses more than one element comprising copper, indium, gallium and selenium. In step (d), depositing n-type semiconductor layer refers to a chemical bath, spin coating, dipping, electrochemical deposition or physical vapor deposition; n-shaped semiconductor layer is cadmium sulfide, zinc sulfide, selenide, zinc oxide, zinc selenide, indium sulfide, indium zinc selenium, or tin; and the n-shaped semiconductor thin layer is 200 nm thickness.Z=2-9;x=greater than 0 but less than or equal to 1;y=0-1;z= greater than or equal to 0 but less than 1;J=Ag or Au is more than 0;E=Al, In or Ga;E=Al, In or Ga; andD=Se or Te.Preferred Component: The substrate is metal, silicon chip, or stainless steel sheet. The back electrode is molybdenum, aluminum, gold, copper, indium tin oxide glass, silver, tungsten, nickel or titanium.