NOVELTY - An absorber layer is deposited onto a back-contact layer (120) carried by a substrate (110). The process are sequentially repeated from zero to R times, where R is a repeat counting index having value from 0 to R which identifies the successive steps (S3) and (S4), and temperature of substrate from steps (S2)-(S5) is more than 350 degrees C. At least one element (B') is deposited onto back-contact layer of substrate in an amount which is more than 10% and less than 90% of total amount of elements (B') at end of deposition process carried out in presence of at least one element (C').    USE - Fabrication of absorber layer used for thin-film photovoltaic device (claimed).    ADVANTAGE - The method efficiently and economically forms absorber layer. The thin-film photovoltaic device containing the layer has excellent energy-conversion efficiency.    DETAILED DESCRIPTION - An absorber layer (130) is made of chalcogenide material of formula: AB'C' with quaternary, pentanary or multinary variations. An absorber layer (130) is deposited onto a back-contact layer (120) carried by a substrate (110). The process are sequentially repeated from zero to R times, where R is a repeat counting index having value from 0 to R which identifies the successive steps (S3) and (S4), and temperature of substrate from steps (S2)-(S5) is more than 350 degrees C. At least one element (B') is deposited onto back-contact layer of substrate in an amount which is more than 10% and less than 90% of total amount of elements (B') at the end of the deposition process carried out in presence of at least one element (C'). An initial amount of at least one element (A) and/or element (B') is deposited in presence of at least one element (C) with atomic ratio (Ar/B'r) of more than 1. The atomic ratio (A/B') of the total deposited elements (A) and (B') at the end of the deposition is calculated by relation of formula: (1/(3+2R))2 less than A/B' less than 1. At least one element (A) and/or element (B') is deposited in presence of at least one element (C') with atomic deposition ratio (A'r/B"r) which is 1/1.2 times less than the atomic deposition ratio (Ar/B'r). The atomic ratio (A/B') of the total deposited elements (A) and ('B) at the end of the reaction is calculated by relation of formula: ((2+2r)/(3+2R))2 less than A/B less than 1+3((1+2r)/(2+2R))2. At least one element (A) and/or element (B') is deposited in presence of at least one element (C') with atomic deposition ratio (A1r/B1'r) which is 1.2 times or more than the atomic deposition ratio (A'r/B"r). The atomic ratio (A/B') of the total deposited elements (A) and (B) at the end of the reaction is calculated by relation of formula: ((3+2r)/(3+2R))2 less than A/B less than 1+3((1+r)/(1+R))1/2. An additional amount of at least one element (B') is deposited in presence of at least one element (C') onto the partially completed absorber layer by changing the atomic ratio (A/B') of the total deposited elements (A) and (B') at the end of the reaction to more than 0.6 to less than 0.99.    A=copper or silver;    B'=indium, gallium or aluminum;and    C'=sulfur, selenium or tellurium.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic structure of absorber layer deposited on a substrate.    Substrate (110)    Back-contact layer (120)    Absorber layer (130)    Semiconductor buffer layer (140)    Front-contact conductive oxide layer (150)