TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The thin-film N-type semiconductor and thin-film P-type semiconductor is made of a material including silicon, germanium, gallium arsenide, indium phosphide, gallium phosphide, gallium antimonide, zinc telluride, an elemental semiconductor, binary compound semiconductor, ternary compound semiconductor and/or quaternary compound semiconductor, the semiconductor micro/nanostructure array is made of a material including silicon, germanium, gallium arsenide, indium phosphide, gallium phosphide, gallium antimonide, zinc telluride, an elemental semiconductor, binary compound semiconductor, ternary compound semiconductor and/or quaternary compound semiconductor, the first transparent substrate and second transparent substrate is made of a material including plastic plate, glass plate, quartz plate, plastic plate coated with transparent conductive film, glass plate coated with transparent conductive film or quartz plate coated with transparent conductive film, the transparent conductive film is made of indium tin oxide or fluorine-doped tin oxide, and the source-material wafer is made of a material including silicon, germanium, gallium arsenide, indium phosphide, gallium phosphide, gallium antimonide, zinc telluride, an elemental semiconductor, binary compound semiconductor, ternary compound semiconductor and/or quaternary compound semiconductor.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: The method further comprises: coating a curable adhesive on a temporary substrate, where the temporary substrate is made of a semiconductor material, conductive material or an insulating material, inserting the semiconductor micro/nanostructure array of the source-material wafer into the curable adhesive of the temporary template, curing the curable adhesive, where the curable adhesive is sol, gel glue, melted metal, polymer, spin-on-glass, wax, polymethylmethacrylate or poly(3-hexylthiophene), and separating the semiconductor micro/nanostructure array from the source-material wafer and transferring the semiconductor micro/nanostructure array to the temporary substrate, where the semiconductor micro/nanostructure array is separated from the source-material wafer via ultrasonic vibration, slight knocking, chemical etching or directly lifting the source-material wafer, and the semiconductor micro/nanostructure array is detached from the temporary substrate with sticking force, stress, chemical etching or laser melting or via dissolving the curable adhesive with a solvent; stacking the another micro/nanostructure PN junction diode array thin-film solar cell to form a stack structure, where the semiconductor micro/nanostructure array of each the micro/nanostructure PN junction diode array thin-film solar cell absorbs a different waveband of sunlight; and filling a transparent non-conductive material into gaps of the semiconductor micro/nanostructure array. The step of fusing together the thin-film N-type semiconductor and one side of the semiconductor micro/ nanostructure array or the step of fusing together the thin-film P-type semiconductor and another side of the semiconductor micro/nanostructure array is realized with laser illumination or with heating and pressing. The semiconductor micro/nanostructure array is formed with an epitaxial method, a doping method, an etching method or a crystal growth method, where the etching method is dry etching method, wet etching method, physical etching method and/or chemical etching method, and a mask used by the etching method is a photoresist patterned with a photolithographic technology, spin-coated nanoparticles, nano-islands formed via rapidly annealing a coated metal film, template fabricated with an anodic aluminum oxide method or template fabricated with an electrochemical chemical vapor deposition method. The selectively-etched layer is formed in between the source-material wafer and the semiconductor micro/nanostructure array before the semiconductor micro/nanostructure array is fabricated with an epitaxial process and an etching method, where the semiconductor micro/ nanostructure array is separated from the source-material wafer via removing the selectively-etched layer with chemical etching method or dry etching method. The semiconductor micro/nanostructure array is an array of diodes each having at least one PN junction, where the outmost P-type portions of the diodes are joined to the thin-film P-type semiconductor, and outmost N-type portions of the diodes are joined to the thin-film N-type semiconductor, and the semiconductor micro/nanostructure array is an array of diodes each having many PN junctions and absorbing different wavebands of sunlight. Preferred Components: The longitudinal section of the semiconductor micro/ nanostructure array has a width of 1 nm to 3000 mu m. The semiconductor micro/nanostructure array is made of a P-type semiconductor material or an N-type semiconductor material.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The thin-film N-type semiconductor is made of a small molecule organic semiconductor material including 2-phenyl-5-(4-biphenylyl)-1,3,4- oxadiazole, aluminum tris(8-hydroxyquinoline), (1-(3-methoxycarbonyl)-propyl-1-1-phenyl-(6,6)C61), 4,4,-bis(2,2,diphenyl vinyl)-1,1'-biphenyl, beryllium-quinoline complex, aluminum (III) bis(2-methyl-8-quinolinate)4-phenylphenolate, oxadiazole or 2,5-bis(tert-butyl-2-benzoxazolyl) thiophene, and the thin-film P-type semiconductor is made of a small molecule organic semiconductor material including poly(3-hexylthiophene), poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene), poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-p-phenylene vinylene), poly(3,4-ethylenedioxythiophene), poly(9,9-dioctylfluoreny-2,7-diyl, (N, N'-diphenyl-N, N'-bis(3-methyl-phenyl)-1,1'-biphenyl-4,4'diamine) or N,N'-his-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine. EXAMPLE - No suitable example given.