NOVELTY - Producing solar cell, comprises: providing controlled atmospheric annealed single crystal aluminum antimonide substrate material by producing heat treated aluminum antimonide crystal, exposing the heat treated crystal to an atmosphere containing oxygen to form a crystalline oxide layer, and removing areas of the oxide layer from aluminum antimonide host crystal to enable coupling of conductive material contacts or coupling more solid-solution semiconductor materials to host crystal; and coupling material with controlled atmospheric annealed single crystal aluminum antimonide active host layer.    USE - The method is useful for producing a solar cell.    ADVANTAGE - The method: utilizes highly pure aluminum antimonide single crystal substrate that efficiently couples the sun energy distribution; and provides high quality solar cell which allows for direct conversion of solar energy to electrical power, and has increased overall conversion efficiency.    DETAILED DESCRIPTION - Producing a solar cell, comprises: providing a controlled atmospheric annealed single crystal aluminum antimonide substrate material by producing a heat treated aluminum antimonide crystal by heat treating an aluminum antimonide host crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, at least one surface molecule group to decompose and elemental antimony to evaporate from a surface of the aluminum antimonide crystal, exposing the heat treated aluminum antimonide crystal to an atmosphere containing oxygen to form a crystalline oxide layer on the surface of the aluminum antimonide crystal, and removing areas of the oxide layer from the aluminum antimonide host crystal to enable coupling of conductive material contacts or coupling more solid-solution semiconductor materials to the host crystal, where the controlled atmospheric annealed single crystal aluminum antimonide substrate material has a uniform resistivity of less than 10 Omega -cm and is utilized as an active host layer; and coupling at least one solid-solution semiconductor material with the controlled atmospheric annealed single crystal aluminum antimonide active host layer, where each of the solid-solution semiconductor materials further comprise a lattice parameter so as to produce a lattice-matched configuration. An INDEPENDENT CLAIM is also included for producing a solar cell, comprising: providing the controlled atmospheric annealed single crystal aluminum antimonide substrate material by heat treating an aluminum antimonide host crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental antimony from a surface of the aluminum antimonide crystal to produce a heat treated aluminum antimonide crystal, forming stable oxides of aluminum and antimony from residual surface oxygen to form a crystalline oxide layer on the surface of the heat treated aluminum antimonide crystal, and removing areas of the oxide layer from aluminum antimonide host crystal for coupling conductive material contacts or coupling more solid-solution semiconductor materials; and coupling the at least one solid-solution semiconductor material with the controlled atmospheric annealed single crystal aluminum antimonide substrate material.    DESCRIPTION OF DRAWING(S) - The figure illustrates a lattice matched four layer solar cell device.    Aluminum-gallium-indium-antimony semiconductor (420)    Aluminum-antimony layer (424)    Gallium-indium-antimony layer (428)    Zinc cadmium telluride semiconductor (432)    Solar cell (500)