NOVELTY - The method comprises disposing a layer comprising a stress layer on a surface of a source substrate (2), operatively associating a handle foil with the stress layer, applying a force to the handle foil to separate the stress layer from the source substrate and to leave, on the stress layer surface, a portion of the source substrate corresponding to the area present in contact with the surface of the source substrate, and providing a fracture plane (16) below the surface of the source substrate. The stress layer has a stress layer surface area.    USE - The method is useful for manufacturing a thin film direct bandgap semiconductor active solar cell device.    ADVANTAGE - The method is capable of economically manufacturing the thin film direct bandgap semiconductor active solar cell device with high energy conversion efficiency.    DETAILED DESCRIPTION - The method comprises disposing a layer comprising a stress layer on a surface of a source substrate (2), operatively associating a handle foil with the stress layer, applying a force to the handle foil to separate the stress layer from the source substrate and to leave, on the stress layer surface, a portion of the source substrate corresponding to the area present in contact with the surface of the source substrate, and providing a fracture plane (16) below the surface of the source substrate. The stress layer has a stress layer surface area present in contact with and bonded to the surface of the source substrate, and a less thickness value that results a spontaneous spalling of the source substrate, and comprises a deposited stress layer or layers. The portion of the source substrate is less thick than a source layer. The source substrate comprises an inorganic single crystal or polycrystalline material. The deposited stress layer/layers extends/extend from and operatively associated with the substrate, and comprises/comprise an optional adhesion layer that forms an interface with the source substrate operatively associated with a metal layer (6) opposite to the interface. The handle foil comprises a plastic or metal foil that extends from and operatively associated with the stress layer, a flexible layer, and a polyimide layer. The fracture plane comprises a growth interface placed between the source substrate and the stress layer, and a plane provided below a formed p-n junction, diode, transistor, resistor or metal contact.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic side elevational-cross sectional view of a mechanical force-induced spalling of a source substrate.    Source substrate (2)    Metal layer (6)    Handle layer (8)    Semiconductor layer (14)    Fracture plane. (16)