TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: In the method, a polymerization initiator having a molecular weight of at least 170 is used. In the method, at least one substituted benzene compound of formula (1a) is used as the polymerization initiator. The organic layer is formed by flash vapor deposition.R1 = 1-18C alkyl, 1-18C aryl (both optionally substituted), carbonyl or a substituent comprising any two or more such groups bonding to each other;R2-R4 = 1-18C alkyl, 1-18C aryl (both optionally substituted), amino, alkoxy, acyl, alkoxycarbonyl, alkylthio, arylthio, OH, halo or CN;R7, R9 = H or methyl;R8, R10 = H;L1, L2 = 1-18C alkylene, 1-18C arylene, ether, imino, carbonyl, or monovalent or polyvalent linking group comprising any of these groups bonding to each other in series;m1, m2 = 1-6; andn1-n3 = 0-5.Preferred Components: The polymerization initiator is liquid at 30 degrees C under one atmosphere. The polymerization initiator has a melting point of not higher than 30 degrees C. The composition contains the polymerization initiator in a ratio of at most 2 wt%. The compound used as the polymerization initiator is substituted benzophenone compound of formula (1b). The radical-polymerizing monomer constituting the organic layer is at least one ethylene compound of formula ((R8-CH=C(R7))m1-L1) (1c) or ethylene ester compound of formula ((R10-CH=C(R9)-C(=O)-O)m2-L2) (1d).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent is of formula (R8-C(R1)(R7)-(C(R2)(R6))e-C(R3)(R5)-R4) (XII) and/or substituted benzene compounds of formula (XIII). The organic solvent is a fluorinated organic solvent, mixture solvents containing fluorinated organic solvents, or mixture solvents containing fluorinated and non-fluorinated organic solvents. The organic solvent is hexafluoroisopropanol, 1,1,1,3,3,3-hexafluoro-2-phenyl-2-propanol, 1,1,1,3,3,3-hexafluoro-2-(p-tolyl)-propanol and/or perfluoropropane.n = 3-5000;R1-R20 = H, F, Cl, Br, I, amino, formyl, carboxy, OCjH(2j+1), CjH(2j+1), SCjH(2j+1), N(CjH(2j+1))2, CjH(2j+1)SO3H, or CjH2jPO3H2;j = 0-8;Y1 = S, O, C6H4, C=C, C=N, or N=N;p = 0-3;y = 0 or 1;m, a = -5000 to 5000;A1 = organic anion, organic cation, inorganic anion, or inorganic cation; ande = 0-5.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The doped conjugated polymer is polyacetylene of formula (I), polypyrrole of formula (II), polyparaphenylene of formula (III), polythiophene of formula (IV), polyfuran of formula (V), poly(3,4-ethylenedioxythiophenes) of formula (VI), poly(3,4-propylenedioxythiophenes) of formula (VII), polythianaphthenes of formula (VIII), polyanilines of formula (IX), poly-phenyl-tetrahydro-bi(thieno-dioxinyl)-yl-benzene-diamine of formula (X), poly-phenyl-(1H-pyrrol-2-yl)-amine of formula (XI) and/or their derivations or copolymers. The doped conjugated polymer is an acid doped conjugated polymer or an oxidant doped conjugated polymer. The concentration of the doped conjugated polymer is less than 40 wt.%. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Agent - The surface-control agent is a silicone type surface-control agent. EXAMPLE - None given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The alkali compound is tetrahydroxymethyl ammonium, tetrahyroxy ethyl ammonium chloride, potassium hydroxide, sodium hydroxide and/or ammonium hydroxide. The cyclic compound is N-vinylpiperazine, N-vinyl methyl piperazine, N- vinylethyl piperazine, N-vinyl-N'-methylpiperazine, N-acryloyl piperazine, N-acryloyl-N'-methylpiperazine, N-vinylmorpholine, N- vinyl methyl morpholine, N-vinylethyl morpholine, N-acryloyl morpholine, N-vinylpiperidone, N-vinyl methyl piperidone, N- vinylethyl piperidone, N-acryloyl piperidone, N-vinyl pyrrolidone, N-vinyl methyl pyrrolidone, N-vinylethyl-2-pyrrolidone, N-acryloyl pyrrolidone, N-vinylcarbazole and/or N-acryloyl carbazole.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The texture-etchant composition comprises polysaccharides chosen from glue partition compound, fructan compound, mannan compound and/or lactam-type compound. The glue partition compound is cellulose, dimethylamino cellulose, diethylaminoethyl cellulose, ethylhydroxyethyl cellulose, methylhydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl cellulose, ethyl cellulose, methyl cellulose, carboxymethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, ( alpha )-cyclodextrin, ( beta )-cyclodextrin, ( gamma )- cyclodextrin, hydroxypropyl ( beta )-cyclodextrin, methyl-( beta )- cyclodextrin, dextran, dextran sulfate sodium, saponin, glycogen, zymosan and/or lentinan. The content of polysaccharide is 10-9-10 weight% with respect to 100 weight% of the texture etchant composition.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The acid treatment of silkworm cocoons comprises thermally treating animal protein silkworm cocoons for 3-10 hours at 40-100 degrees C in nitric acid solution of 1-20 mol/L. The high-temperature calcining involves calcining materials for 1-8 hours at 800-1500 degrees C under nitrogen atmosphere. Preferred Component: The nitrogen content in graphitized nitrogen-containing carbon material is 5-5.5%.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Method: Sintering time is 1-4 hours. Thermal processing time is 2-6 hours.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metallic foil contains element chosen from copper, aluminum and selenium. The deposition amount of metallic foil is 0.1-2 atomic%. The light absorption layer comprises copper-indium-gallium-selenium-sulfur-containing complex of formula: Cu(InxGa1-x)(SeyS1-y)2, where x is 0-1 and y is 0-1. Preferred Property: The metallic foil has thickness of 1-50 nm.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Layers: The organic light-emitting device further has light-emitting layer, hole-transport layer, hole injection layer, electron-transport layer, electron injection layer and hole-blocking layer.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. SPECIFIC COMPOUNDS - 475 Polycyclic compounds e.g. diphenyl-(10 -phenyl-10H-phenoxazin-3-yl)-amine of formula (Ia), naphthalen-1-yl-phenyl-(10 -phenyl-10H-phenoxazin-3-yl)-amine, biphenyl-4-yl-phenyl-(10-phenyl-10H -phenoxazin-3-yl)-amine, naphthalen-2-yl-phenyl-(10-phenyl-10H-phenoxazin-3-yl) -amine, and phenyl-(10-phenyl-10H-phenoxazin-3 -yl)-(1,1';4',1'')terphenyl-4-yl-amine are specifically claimed.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electroconductive composition further contains solvent. The content of carbon nanotubes, electroconductive polymer and onium salt compound is 3-50 %mass and 30-80 %mass and 1-50 %mass, respectively with respect to total solid content of electroconductive composition. Preferred Process: The carbon nanotubes are uniformly dispersed in the electroconductive composition. The electroconductive film is formed by molding the electroconductive composition, and applying heat or active energy ray. The electroconductive laminate is formed by coating the electroconductive composition on a base material, and applying heat or active energy ray. The electroconductive laminate has electrode.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The onium salt compound is compound having oxidation ability with respect to the carbon nanotubes and/or electroconductive polymer, and produces acid, by applying heating or active energy ray irradiation. The onium salt compound is of formulae: R22-S+(-R21)(-R23)-.X- (I), X-S(-R21)(-R23)-R24-S+(-R21)(-R23)-.X- (II), R25-I+-R26.X- (III), R28-N+(-R27)(-R29)-R30-.X- (IV), or R32-C+(-R31)(-R33)-.X- (V).R21-R23,R25,R26,R31-R33=linear or branched or cyclic alkyl, aralkyl, aryl, or heteroaryl (all optionally substituted);R27-R30=H, linear or branched or cyclic alkyl, aralkyl, aryl, heteroaryl, alkoxy, or aryloxy;or two of R21and R23, R21, R23, R25 and R26, R31-R33, and two of R27-R30=aliphatic ring, aromatic ring, and heterocyclic ring;R24=linear or branched or cyclic alkylene or arylene;andX-=anion of aryl sulfonic acid, anion of perfluoro alkyl sulfonic acid, anion of perhalogenation Lewis acid, anion of perfluoroalkyl sulfonimide, perhalogen acid anion, or alkyl, or aryl borate anion.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The base material is resin film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The weight ratio of tin oxide or tin dioxide, and silica is 53.4-26.7:0.01-14.4. The band gap of isolation layer is 3.4-3.6 eV and the refractive index is 1.6-2.1.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The formulation comprises one or more organic solvents and one or more organic binders or its precursors, preferably having permittivity of 3.3 or less at 1000 Hz. Preferred Definitions:    one or more of Ar1-Ar3 and/or one or more of Ar4-Ar6=electron donating aryl or heteroaryl chosen from 94 claimed groups e.g. group of formula (D1)-(D5), or electron accepting aryl or heteroaryl chosen from 44 claimed groups e.g. group of formula (A1)-(A5);    R11,R12=H, or R1 or R3;and    X1,X2=O.    EXAMPLE - 1,4-Bis-(4-octyl-phenyl)-3,6-di-thiophen-2-yl-1H,4H-pyrrolo(3,2-b)pyrrole-2,5-dione (in g) (2.4) was dissolved in chloroform (720 cm3) at 23 degrees C. N-Bromosuccinimide (1.325) was added and resulting solution was stirred at 23 degrees C for 18 hours. The reaction mixture was poured into methanol, precipitate was filtered and recrystallized in tetrahydrofuran. 3.6-Bis-(5-bromo-thiophen-2-yl)-1,4-bis-(4-octyl-phenyl)-1H,4H-pyrrolo(3,2-b)pyrrole-2,5-dione (1.15) was obtained.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The mass ratio of solvent with respect to solute is 60-90:10:40. The solvent is water, ethanol, t-butyl alcohol or camphene. The weight ratio of solute of precursor of organic siloxane ceramics with respect to spinning polymer is 35-65:35-65. The precursor of organic siloxane ceramics is butyl titanate, tetraisopropyl titanate, ethyl orthosilicate, zinc acetate, zinc nitrate, zirconium nitrate, manganese chloride, chloride, acetate, barium nitrate, ferric nitrate, cerium nitrate, yttrium nitrate, indium nitrate, and/or silver nitrate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The spinning polymer is polyethylene pyrrolidone, polyacrylonitrile, polyvinyl butyral, sodium polyacrylate, polymethyl methacrylate, polyvinyl alcohol, cellulose, nylon 66, polystyrene, elastic polypeptide, recombinant protein, polyimide, and/or polylactic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Protective gas is hydrogen and argon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The high thermal conductivity material consists of copper, silver, gold, aluminum, graphitized carbon, silicon, carbon nanotubes, diamond and/or graphene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The carbonaceous material is chosen from carbon black, vapor-grown carbon fiber, carbon nanofiber and carbon nanotube. The negative electrode active material contains graphite.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The non-aqueous electrolyte contains fluorine-containing-lithium salt as electrolyte and solvent. The solvent is chosen from cyclic carbonate, linear carbonate ester and fatty acid ester.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The resin film contains polysaccharide and carbonaceous electroconductive material. The polysaccharide is chosen from chitosan, chitin, cellulose and their derivatives. The polysaccharide has ester bonding with organic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The nickel content of catalyst is 5-30 weight% in conversion of metal. The content of metallic nickel is 40-75 weight% with respect to the nickel content. The catalyst further contains alkali metal, alkaline-earth metal element, rare earth element and/or precious metal element.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The complex agent is citrate. The reducing agent is ascorbic acid, its derivative(s) or isomer. The organic substance which coats the surface is 2-10C organic substance.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The dispersion liquid further contains inorganic glass component and surfactant with hydrophilic-lipophilic balance value of 10 or more. The inorganic glass component contains elements chosen from silicon, lithium, boron and phosphorus. The metal nanowires have surface layer to cover the core material. The core material is different from the metal contained in the surface layer. The content metal nanowire in the electroconductive film is 0.005-1 g/m2.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The sputtering target has a structure containing compound phase chosen from sodium fluoride compound phase, sodium sulfide compound phase and a sodium selenide compound phase. Preferred Properties: The average particle diameter of the sodium fluoride compound phase, sodium sulfide compound phase and sodium selenide compound phase is 5 mm or less, each respectively. The average particle diameter of the metal phase in the target substrate is 10-100 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preparation (claimed): Elements chosen from calcium, strontium, barium, titanium, vanadium, chromium, manganese, copper, zinc, palladium, silver, cadmium, scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium, and/or their oxide is mixed with indium, cobalt, antimony and tellurium to form mixture, and obtained mixture is heat-treated at 400-800 degrees C, to obtain indium-cobalt-antimony telluride compound (I). Preferred Composition: The mixture includes iron, nickel, ruthenium, rhodium, palladium, iridium platinum, silicon, gallium, germanium, tin or their oxide. Preferred Definitions:    x,y=more than 0 to 0.5;and    m=more than 0 to 0.1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compound: The compound has formula (I), where x is 0-0.4,, preferably 0-0.25 and z is 0.9-2, preferably 0.9-1.75, more preferably 1-1.5, most preferably 1.5. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The monopropellant is hydrogen peroxide. The catalyst is silver. The rigid material is aluminum or steel.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The self-regulating pressure (I) source further includes: an opening in the chamber to allow the gas to leave the chamber; and a filter proximate the opening, the filter impervious to liquids while allowing gas to pass. The chamber is cylindrical. The filter is PTFE. The pressure source is operatively connected to an actuator. The actuator is a fluidic elastomer actuator. The air chamber is open to the atmosphere. The pressure source (II) is made of rigid materials.
TECHNOLOGY FOCUS - METALLURGY - The solder bonding layer comprises a layer of one of tin and indium sandwiched between layers of one of chromium and titanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Film: The transparent conductive film contains compound of tin and fluorine. The transparent conductive film comprises X-ray-diffraction pattern. The diffraction peak intensity of a surface is a larger transparent conductive film than the diffraction peak intensity of any crystal planes other than plane. Average particle diameter of crystal computed from half value width of the diffraction peak intensity of surface. The larger transparent conductive film is average particle diameter of the crystal grain computed from the half value width of the diffraction peak intensity of any crystal planes other than a surface. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Alkali metal compound is potassium compound and/or sodium compound.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The composition contains 0.01-0.5 mol.% trifunctional or more than trifunctional copolymerization components with respect to the total acid component of polyester.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: An oxidizing agent other than hydrogen peroxide, is further added during color reduction method of vinyl polymer. The oxidizing agent is oxygen, ozone and/or organic peroxide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The vinyl polymer is (meth)acrylic ester-type polymer, or acrylic acid ester polymer. The crosslinkable functional group of vinyl polymer is exists in the molecular chain terminal. Preferred Property: The color difference of the vinyl polymer before and after contacted with hydrogen peroxide solution, is 10 or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The surface treating agent is silane coupling agent. The tetracarboxylic-acid comprises 3,3',4,4'-biphenyl tetracarboxylic acid dianhydride and/or pyromellitic dianhydride as main components. The diamine comprises p-phenylenediamine and/or diaminodiphenyl ether as main component. Preferred Methods: The surface treating agent is coated on the self-supportive film from time to time for 2-30 minutes. The polyimide metal laminated product is obtained by laminating the metal layer on the polyimide film using an adhesive agent by metallizing method. In the polyimide metal laminated product, base metal layer is formed on the polyimide film by metallizing method, and metal plating layer is formed by wet plating method. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The photocurable resin composition further contains silane coupling agent (0.5-10 parts mass), and (meth)acryloxy group-containing organopolysiloxane (0-2000 parts mass) having structure different from the cyclic organopolysiloxane, with respect to 100 parts mass of cyclic organopolysiloxane. In the photocurable resin composition, content of functional group e.g. (meth)acryloxy group is 180-900 g/mol. Preferred Definitions:    R1=methyl.
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The ferritic stainless steel further contains (in %mass) titanium (0.05 or less), molybdenum (0.05-0.5), copper (0.05-0.5), vanadium (0.05-0.5), rare-earth element (0.001-0.05), calcium (0.001-0.01) and/or zirconium (0.05-0.5). The chromium concentration in the oxide layer during formation of the oxide layer from surface layer is 5 %mass or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The mixed gas used during stirring comprises hydrogen gas (0.1-5%), and nitrogen gas or argon gas (remainder).    TECHNOLOGY FOCUS - METALLURGY - Preferred Material: The container and stirring rod used for stirring are made of stainless steel coated with titanium nitride, chromium nitride, or diamond-like carbon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The average particle diameter of nano-metal oxide is about10 to 50 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of lead in the powder is preferably 0.01 ppm or less. Preferred Property: The half-power band width of magnesium oxide powder of the peak of (111) plane, (200) plane and (220) plane obtained by X-ray diffractometry using Cu-K-( alpha ) ray, is 0.20 degrees or less, respectively. The magnesium oxide powder has 50% accumulation particle diameter (D50) measured by laser diffraction-scattering type particle size distribution of 0.1-10 mu m.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Apparatus: The guide frame has lower and side portions provided with opening portion that connects lower and side portions inside and outside of guide frame. The apparatus comprises supply pipe (6) that supplies washing liquid to the inner bottom portion of the washing tank. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The source of silicon and chromium used in the manufacture is chromium silicide particles (Cr3Si, Cr5Si3, Cr3Si2, CrSi and CrSi2).    TECHNOLOGY FOCUS - METALLURGY - Preferred Film: A diffused layer with a thickness of 50 nm or more is formed as a portion of heat-resistant-alloy coating film at the interface with an iron-type base material.
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The sputtering target has a structure containing at least one of compound containing antimony single element, or antimony and copper in crystal grain or grain boundary of alloy phase containing copper-gallium alloy. The sputtering target further contains sodium fluoride compound, sodium sulfide compound or sodium selenide compound. The amount of sodium in target with respect to total metallic elements is 0.05-2 atomic%.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The tellurium group glass frit contains 3-40 mol% of silver by conversion of oxide with respect to total amount of tellurium group glass frit. The tellurium group glass frit contains tungsten and/or molybdenum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electrolyte anion comprises fluorine atom.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The phenolic hydroxyl group-containing compound has 2 or more hydroxyl groups, preferably hindered phenol-type compound, bisphenol-type compound and phenolic resin-type compound. The monomer of conductive polymer is pyrrole, thiophene, aniline, phenylene and/or its derivatives.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The weight ratio of amide-type solvent with respect to solvent other than amide-type solvent is 80/20-5/95. The amide-type solvent is N,N-dimethylacetamide or N,N-dimethylformamide. The solvent other than amide-type solvent is methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, cyclopentanone, propyl-glycol-monomethyl ether acetate, methyl mono glyme, methyl-di-glyme, ethyl mono glyme, ethyl diglyme, butyl diglyme and/or gamma -butyrolactone.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyamidoimide (I) is preferably of formula (II). Preferred Process: The polyamidoimide film is obtained by forming polyamidoimide solution into a film. Preferred Property: The polyamidoimide film has linear thermal expansion coefficient of 22 ppm/K or less at 100-300 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The conjugate base is chosen from carboxylate anion, carbonate ion, bicarbonate ion, citrate ion, phosphate ion, borate ion and tartrate ion. The trivalent gold compound is chosen from gold carboxylate, gold oxide, gold hydroxide and alkali metal. Preferred Process: The method involves using carrier chosen from metal oxide, porous silicate, porous metal complex, porous polymer bead, carbon material, ceramic honeycomb, or metal honeycomb.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The support plate is a glass plate. Preferred Property: The glass substrate has thickness of 0.03-0.8 mm.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic insulating film is a film containing silicon oxide, silicon nitride, silicon oxynitride or aluminum oxide. Preferred Property: The thickness of the inorganic insulating film is 5-5000 nm.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The resin layer contains silicone resin. The silicone resin is obtained by reacting hardened material of organo alkenyl polysiloxane and organo-hydrogen-polysiloxane. Preferred Properties: The surface roughness (Ra) of the surface which connected the resin layer of the inorganic insulating film is 30 nm or less. The thickness of the resin layer is 1-100 mu m.
TECHNOLOGY FOCUS - POLYMERS - Preparation (Claimed): Preparation of (I) comprises coupling one or more (II) with each other in an aryl-aryl coupling reaction. Preferred Components: The mixture or polymer blend comprises (I) and one or more n-type organic semiconductor compounds. In the mixture or polymer blend, the n-type organic semiconductor compound is optionally substituted fullerenes and graphene, or phenyl-C60-butyric acid methyl ester (PCBM-C60), PCBM-C70, PCBM-C61, PCBM-C71, bis-PCBM-C61, bis-PCBM-C/1, indene-C60 bisadduct or graphene. Preferred Definitions:    R3, R4 = H.    EXAMPLE - 1-(4,6-Dibromo-thieno(3,4-d)thiazol-2-yl)-2-ethyl-hexan-1-one (251 mg) was weighted into a microwave vial and then 4,8-dioctyl-2,6-bis-trimethylstannanyl-benzo(1,2-b;4,5-b')dithiophene (437 mg), tri-O-tolyl-phosphine (14.4 mg) and tris(dibenzylideneacetone)dipalladium(0) (5.4 mg) were added. The flask was subjected to three successive cycles of vacuum followed by refilling with nitrogen. Then, anhydrous degassed N,N'-dimethylformamide (1.6 cm3) and anhydrous degassed toluene (10 cm3) were added via a syringe. The reaction was heated over microware at 120 degrees C for 2 minutes, 140 degrees C for 2 minutes, 160 degrees C for 2 minutes and 170 degrees C for 20 minutes to obtain poly(4,8-dioctyl-benzo(1,2-b;4,5-b')dithiophene-2,6-diyl-alt-2-(2-ethylhexan-1-one)-thieno(3,4-d)thiazole-4,6-diyl) (215 mg).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The hydrofluoric acid concentration in hydrofluoric acid solution is 1-20 %mass, preferably 3-10 %mass. The mixed acid solution has hydrofluoric acid concentration of 1-50 %mass, preferably 5-10 %mass, and nitric acid concentration of 1-70 %mass, preferably 40-63 %mass.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The back surface electrode layer contains indium, tin or strontium. The contact layer comprises cadmium or oxygen. The contact layer is cadmium, indium oxide or tin oxide. The window layer contains aluminum-doped zinc oxide, gallium -doped zinc oxide or gallium and aluminum co-doped zinc oxide. The buffer layer comprises the barium doped strontium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal hydroxide (A) is composite metal hydroxide of formula: M2+1-xAl3+x(OH-)(X(power)n-)x/n.mH2O, preferably (Al2Li(OH)6)rY'.qH2O.M2+=Mg2+, Ca2+ or Zn2+;x=more than 0 to less than 0.5;m=0-2;n=1-3;X(power)n-=n valent anion;Y'=inorganic anion or organic anion;r=valency of Y';andq=positive number.Preferred Property: The solubility of composite metal hydroxide is 7 or more.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The transparentization nucleating agent (D) is 1-(8-propyl-2,6-bis-(4-propyl-phenyl)-tetrahydro-(1,3)dioxino(5,4-d)(1,3)dioxin-4-yl)-ethane-1,2-diol. Nitrogen-containing organic compound (B) is fatty amine, aliphatic imine, and/or aliphatic amide-type organic compound, preferably aromatic compound containing nitrogen-containing heterocyclic ring group or hindered amine-type organic compound. Preferred Property: The solubility of hindered amine organic compound is 7 or more. The oxygen-containing organic compound is organic compound containing secondary or tertiary alcohol having solubility of 7 or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of zinc, silicon, aluminum and oxygen in the layer (2) is 20-40 atomic%, 5-20 atomic%, 0.5-5 atomic% and 35-70 0.5-5 atomic%, respectively, measured using inductively coupled plasma emission spectrochemical analysis. The molar fraction of zinc sulfide and zinc sulfide with respect to the total content of silicon dioxide in the layer (3) is 0.7-0.9. The composite layer further has layer (4) which is silicon-oxide layer. The transparent base material has resin layer in the side which has composite layer. The composite layer has transparent conductive layer containing aluminum-containing indium-tin oxide, zinc oxide or zinc oxide. Preferred Properties: The refractive index of layer (2) is 1.5-1.8 at wavelength of 550 nm. The refractive index of layer (3) is 2.0-2.4 at wavelength of 550 nm. The thickness of the layer (4) is 5-40% of the total thickness of layer (2), layer (3) and layer (4). The thickness of layer (4) is 5-300 nm. The refractive index of the layer (4) is 1.43-1.5 at wavelength of 550 nm.
TECHNOLOGY FOCUS - POLYMERS - The air chamber is made from resin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: Alternately, the composition comprises ester compound (A) (100 ppm or less) of formula: CH2=CH-OCO-R2 (V), (meth)acrylic acid (B) (1000 ppm or less) of formula: CH2=CR1-COOH (VI) and acetic acid (C) (100 ppm or less). The composition further contains compound: R3-C(=CH2)-C(=O)-O-CH(-CH3)-O-C(=O)-C(=CH2)-R3 of formula (III), and volatile organic compound (2000 ppm or less). The total content of compound (I), compound (II) and compound (III) is 99.9 wt.% or more. The ratio of content of compound (II) to total content of compound (I) and compound (II) is 0-0.03 (excluding 0).R3=H or methyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polymer contains compound (I) and further has a repeating unit different from repeating unit (IV). The polymer composition further contains a copolymer having a repeating unit different from repeating unit (IV).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The zerovalent palladium compound is bis(dibenzylidene acetone)palladium complex in which two dibenzylidene acetone is coordinated to one zerovalent palladium. The ionic boron compound is triphenylcarbenium tetrakis(pentafluorophenyl)borate. The phosphine compound is tricyclohexylphosphine.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The cyclic olefin addition polymer has ratio (Mw/Mn) of weight average molecular weight (Mw) and number average molecular weight (of polystyrene conversion) (Mn) of 1-6, glass transition temperature of 130-400 degrees C, and solvent solubility with respect to 10 %mass or more solution of isododecane, methyltris(trimethylsiloxy)silane or decamethylcyclopentasiloxane. Cast film containing the cyclic olefin addition polymer has oxygen permeability coefficient of 40 Barrer or more measured by differential pressure method, and destructive elongation of 50% or more measured by tension test. Preferred Process: During manufacture of high gas-permeable cyclic olefin addition polymer, addition polymerization is carried out at 0-150 degrees C for 1-72 hours under by inert gas atmosphere. Preferred Definitions:    R1=methyl;    s=0-2;    j=2;    A1-A4=H;and    k=0.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The anti-reflective layer comprises silicon nitride or silicon oxide. The adhesive comprises hydrofluoric acid-type etchant.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The hydrogen treatment is carried out by supplying hydrogen of 10-500 sccm, reaction pressure of 0.1-760 torr and reaction temperature of 300-1100 degrees C. The silicon precursor is chosen from silane, dichlorosilane and silicon chloro hydride. The chemical vapor deposition method is thermal chemical vapor deposition or plasma-enhanced chemical vapor deposition. After peeling off from substrate surface, the free-standing silicon film is heat treated at 1000-1450 degrees C to expand grains.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): The aldehyde compound (II) is reacted in presence of reducing agent, to obtain methylol compound. SPECIFIC COMPOUNDS - (4-((4-((4-(bis(4-(hydroxymethyl)phenyl)amino)phenyl)methyl)phenyl)(4-(hydroxymethyl)phenyl)amino)phenyl)methanol of formula (Ia), (4-((4-(4-(bis(4-(hydroxymethyl)phenyl)amino)phenoxy)phenyl)(4-(hydroxymethyl)phenyl)amino)phenyl)methanol, (4-((4-(2-(4-(bis(4-(hydroxymethyl)phenyl)amino)phenyl)ethenyl)phenyl)(4-(hydroxymethyl)phenyl)amino)phenyl)methanol, (4-((4-(2-(4-(bis(4-(hydroxymethyl)phenyl)amino)phenyl)ethyl)phenyl)(4-(hydroxymethyl)phenyl)amino)phenyl)methanol and (4-((2-(2-(2-(bis(4-(hydroxymethyl)phenyl)amino)phenyl)ethyl)phenyl)(4-(hydroxymethyl)phenyl)amino)phenyl)methanol.    EXAMPLE - 4-((4-((4-(Bis(4-formylphenyl)amino)phenyl)methyl)phenyl)(4-formylphenyl)amino)benzaldehyde (12.3 g), ethanol (150 ml) and sodium borohydride (3.63 g) were reacted for 4 hours, extracted, spin-dehydrated using magnesium sulfate, filtered, washed and dried, to obtain (4-((4-((4-(bis(4-(hydroxymethyl)phenyl)amino)phenyl)methyl)phenyl)(4-(hydroxymethyl)phenyl)amino)phenyl)methanol.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Process: Manufacture of thin film solar cell, which further involves forming intermediate layer on the back electrode. The compound thin film is formed on the intermediate layer. The columnar crystal grain is a p-type semiconductor.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: An intermediate layer is of formula: AxSe1-x, where A is chosen from copper, indium, gallium, copper-indium alloy, gallium-indium alloy or copper-gallium alloy, and x is 0-0.7.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The thin film comprises magnesium (more than 5 at%) and group III element (0.5-2 at%), and has a resistance value of 10x 10-3-7x 10-4 Omega .cm and a band gap energy value of 3.4-3.75 eV.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The buffer layer is made of a material selected from the group consisting of gallium arsenide, aluminum gallium arsenide, gallium indium phosphide and aluminum gallium indium phosphide. The etch stop layer is made of a material selected from the group consisting of a quatemary III-phosphide, a ternary III-phosphide, gallium indium phosphide, aluminum indium phosphide, and aluminum gallium indium phosphide. The substrate can be made of gallium arsenide or gallium phosphide.    TECHNOLOGY FOCUS - METALLURGY - The adhesive layer on the photoelectric element is made of a material selected from the group consisting of gold, silver, copper, nickel, chromium, palladium, titanium, tin, zinc, and germanium. The substrate with high heat-dissipating ability can be made of a material selected from the group consisting of gold, silver, copper, aluminum, zinc, copper-zinc alloy, aluminum-magnesium alloy, stainless steel, molybdenum, and silicon.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The anionic surfactant is preferably sulfur-containing compound (I).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic solvent is ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol monobenzyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, dipropylene-glycol monobutyl ether, furfuryl alcohol, tetrahydrofurfuryl alcohol, N-methyl-2-pyrrolidone, dimethylsulfoxide and/or sulfolane. The surfactant is fluorine-type anionic surfactant, fluorine-type nonionic surfactant, fluorine-type amphoteric surfactant and/or hydrocarbon-type anionic surfactant. The alkali compound is sodium hydroxide, potassium hydroxide, and/or tetramethylammonium hydroxide. The etching liquid composition further contains silicon or silicon compound.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The n-type silicon layer contains silicon-hydrogen of microcrystals. Preferred Properties: The optical band gap having refractive index in wavelength 500 nm of the n-type silicon layer is 2.5 or less and absorption coefficient of 10-4/cm is 2.5 eV or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The titanium oxide particles are obtained using quaternary ammonium ion (II). Preferred Definitions:    M=ruthenium, iron, osmium or cobalt;    Y1=S;    A11-A13=S, carboxy, phosphoric acid, sulfonic acid, alkoxy or its salt;    CI1=tetrabutyl ammonium;and    A1=isothiocyanate, isocyanate, isoselenocyanate or halo.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The diamine compound is 2-(4'-aminophenyl)-5-aminobenzoimidazole. The diamine component does not contain 4,4'-oxydianiline. The diamine further contains phenylene diamine.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The maximum heating temperature to imidate is 350 degrees C or more, preferably 450 degrees C or more. Preferred Property: The polyimide film has tensile strength of 450 MPa or more.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The porous membrane has an elongation ratio of 0.5% or more as measured by thermomechanical analysis test at 25 degrees C, and a thermal contraction rate of -1% to 1% at 250 degrees C in at least one direction. Preferred Definitions:    Ar1,Ar2=group chosen from groups of formulae (i)-(v), in a molar ratio of 25 mol% or more, with 20-75 mol% of Ar1 being 4,4'-diphenyl ether;and    X,Y'=-O-, -CH2-, -CO-, -S-, -SO2-, or -C(CH3)2-.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The antimicrobial monomer component is chosen from quaternary ammonium salt, quaternary phosphonium salt, quaternary sulfonium salt, pyridinium salt and piperidinium salt.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The hard-coat layer is irradiated with ultraviolet ray and hardened. Preferred Property: The hard-coat layer has surface roughness (Ra) of 1-50 nm, and contains 1-10000 protrusions having size of 20 nm or more per 125 mu m2.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The crystalline particles contain silver phosphate and calcium phosphate, and have crystal system of 1 cubic crystal or two hexagonal crystal. The sulfur-compound adsorption agent is obtained by drying the reaction product acquired by dispersing and stirring calcium phosphate particle by the solution containing a silver ion. The calcium phosphate is hydroxyapatite. The amount of silver is 0.1-60 wt.%. The to-be-processed object is gas.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The raw material comprises perovskite phase and fluorite phase raw material, perovskite phase comprising nitrate, fluorite phase comprising yttrium, lanthanum, zirconium, gadolinium, samarium, and cerium oxide, and the perovskite has a structure represented as (La1-xZx)a (M1-yNy)O3d, where Z is a doped perovskite, A is calcium or strontium element, M and N are occupied perovskite B consisting of chromium, manganese, iron, cobalt, nickel and copper, a is 0.8-1, x is 0-0.5, y is 0-0.4, and d is 0-0.1764, and the fluorite phase is Yttria-stabilized zirconia, gadolinia doped ceria (GDC), lanthanum-doped ceria (LDC), samaria-doped ceria (SDC).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The reagent is chosen from citrate, EDTA, citric acid, glycine and urea.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The method further comprises: depositing the Group III material on a first solar cell device of the solar cell structure; depositing the Group V material on the first solar cell device of the solar cell structure; and controlling a depositing ratio of the Group III material and the Group V material. In the method, alternating between depositing a Group III material and depositing a Group V material further comprises: depositing a Group III material on the solar cell structure; and depositing a Group V material after deposition of the Group III material, where alternating between depositing the Group III material further comprises depositing the Group III and the Group V materials for 1-1000 seconds. Preferred Components: The Group III materials comprise at least one of boron, aluminum, gallium, indium or thallium. The Group V materials comprise at least one of nitrogen, phosphorus, arsenic, antimony or bismuth. In the photovoltaic device, the tunnel junction is formed by the MEE method of alternating between depositing of the Group III and Group V materials. The photovoltaic device further comprises: a buffer layer (106) positioned between the substrate and the first solar cell device; a nucleation layer (104) positioned between the buffer layer and the substrate; and a second solar cell device positioned between the first solar cell device and the contact. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The insulating layer includes yttria-stabilized zirconia containing yttrium oxide (8 mol% or less) and having ratio of gadolinium and cerium of 0.25 or less. The conductive layer includes gadolinium doped ceria. Preferred Process: A cathode layer containing praseodymium-barium-cobalt complex oxide (PrBaCo2O5+a) and nickel/yttria-stabilized zirconia cermet is formed adjacent to the insulating layer, where a is not defined. The insulating layers are conductive to oxide ions at less than 600 degrees C. Preferred Properties: The thickness of thin-film ion conductive structure is 10 nm or less. The conductive layers have thickness of 100 nm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The inactive gas is argon, nitrogen gas, helium or neon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first reactant and/or the second reactant comprises borohydride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The buffer gas comprises argon. The substrate comprises copper or nickel.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The drop box and feeder pan comprise silicon carbide.
TECHNOLOGY FOCUS - METALLURGY - The metal window is made of nonmagnetic conductive metal such as aluminum or alloy containing aluminum.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The phenoxy resin composition further comprises: at least one comprising bisphenol-A phenoxy, bisphenol-A/bisphenol-F phenoxy, brominated phenoxy, phosphorus phenoxy, bisphenol-A/bisphenol-S phenoxy, caprolactone modified phenoxy, and siloxane modified phenoxy; energy-ray curable acrylic oligomer or acrylic polymer resin; at least one photoinitiator comprising benzophenon, acetophenon, dibenzyl, diacetyl, diphenyl sulfide and azobisisobutyronitrile; and at least one crosslinking agent comprising the phenoxy resin among melamine, urea-formaldehyde, isocyanate functional prepolymer, a phenolic curing agent and an amino-group curing agent. In the phenoxy resin composition: a weight-average molecular weight of the phenoxy resin is 1000-100000; and an end of the phenoxy resin comprises at least one comprising an epoxy group, a hydroxyl group, an amine group, a fluorine group, a siloxane group and an amide group. Preferred Method: The phenoxy resin composition is applied as a thin or thick film having a thickness of 0.1-500 microns on a polymer material. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The dopant containing vapor is comprised of phosphorus oxychloride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inert gas comprises argon and helium. A material used to form the heater comprises graphite.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The reaction pipe is formed of a material consisting of quartz, silica, silicon nitride, boron nitride, zirconia, yttria, silicon carbide, graphite, silicon and a vitreous carbon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The underlayer comprises a metal selected from nickel, cobalt, palladium, silver or molybdenum. The underlayer is a metal silicide. The monovalent copper plating composition comprises at least one reducing agent, or at least one sources of copper ions chosen from of copper oxide, copper sulfate and copper methane sulfonate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Substrate: The substrate is soda lime glass.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The silicon material has 99.9-99.999% purity.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The copper selenide is copper (II) selenide and/or copper (I) selenide. The copper selenide particle powder contains (in %mass) sum total of copper and selenium (98 or more) and oxygen (2 or less). The copper selenide particle powder further contains 100 ppm or less of chlorine, iodine and phosphorus, respectively, and 1000 ppm or less of sodium. The average particle diameter of copper selenide particle powder is preferably 10-400 nm. The reducing agent is hydrazine or hydrazine compound. Preferred Process: The manufacture of copper selenide particle powder is carried out at 20-100 degrees C. The copper particle slurry is obtained by adding reducing agent and alkali to 10-60 degrees C copper salt aqueous solution.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The silicon-type elastomer is polydimethylsiloxane. Preferred Process: The three-layered structure is formed in single surface or both surfaces on a support substrate (7). The rubbing process is performed to the surface of the layer which contacts the ink. The support substrate and intermediate layer are closely contacted. The three-layer stacked elastomer stamp in the formation of organic thin film is used in hot state or heated by ink at high temperature.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The aluminum ultra fine particles have maximum particle diameter of 1000 nm or less.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Property: The organic medium has moisture content of 0.5 %mass or less.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The component (B) further contains polyfunctional (meth)acrylate (B2) having 2 or more (meth)acryl group in a molecule, and does not contain fluorine. The component (B1) does not contain fluorine. The content of component (B) in sheet-type adhesive agent is 50-98 %mass. The primary agent (a) and secondary agent (b) contain an adhesive improvement agent (E). The organic layered clay mineral (A) is organic layer-like silicate. The component (C) is thermal radical polymerization initiator. The thermal radical polymerization initiator is an organic peroxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal carbide is aluminum carbide and semimetal carbide is silicon carbide. The target is a mixture of metal and semimetal or an alloy containing metal and semimetal.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The polyimide has number average molecular weight of 2000-1000000. The planarization layer has thickness of 0.2-1000 mu m.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The mixture weight ratio of component (a1) and component (a2) in the bifunctional (meth)acrylate is 10:90-90:10. The mixture weight ratio of bifunctional methacrylate and polyfunctional urethane (meth)acrylate is 60:40-95:5. The polymeric composition further contains a photoinitiator. Preferred Properties: The resin molding has a thickness of 0.1-3 mm and a dielectric constant of 4 or less at 1 MHz. The laminate is formed by forming a transparent conductive film on the surface(s) of the resin molding.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Arrangement: The inert gas cavity formation mechanism is equipped with a supply system which supplies an inert gas from the side between the cathode and anode. The clearance gap (S) between the anode and cathode is 1-2 mm. The mechanism which collects the carbon nanoparticles is provided with a mechanism which sucks aqueous medium containing the carbon nanoparticles, a mechanism which separates carbon nanoparticles from the aqueous medium, and a mechanism which dries the separated carbon nanoparticles. The collection process involves recovering the carbon nano materials of foamy component on the aqueous medium, collecting carbon nano materials in the aqueous medium, or collecting the carbon nano materials in gaseous phase on the aqueous medium.
TECHNOLOGY FOCUS - METALLURGY - The nanoparticles include gold (Au), silver (Ag), platinum (Pt), aluminum (Al), tungsten (W), and vanadium (V).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The template layer comprises refractory nitride i.e. niobium titanium nitride.    TECHNOLOGY FOCUS - METALLURGY - The nucleation layer comprises cobalt and titanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: A porous adsorbent having large pore diameter than the alcohol molecule, is further used in the transesterification process. The porous adsorbent is chosen from 4A type-molecular sieve, 5A type-molecular sieve and 13X type-molecular sieve. The porous adsorbent adsorbs the raw material alcohol molecule, and desorbs raw material fullerene derivative. The base catalyst is potassium tert-butoxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The carboxylate group of the raw material fullerene derivative is carboxylate group having phenylbutyric acid methyl ester group. The raw material alcohol is 1-12C primary or secondary alcohol.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic compound is triaryl isocyanurate, diallyl isocyanurate, diallyl monomethyl isocyanurate, and/or diallyl mono-glycidyl isocyanurate, preferably diallyl monomethyl isocyanurate. The organic compound contains 2 or more of alkenyl groups in 1 molecule. The organic compound has average molecular weight of 900 or less.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polysiloxane-type composition further contains hydrosilylation catalyst or curing retarder. The polyhedral structured-polysiloxane is a modified polyhedral-structured polysiloxane obtained by carrying out hydrosilylation reaction of the polyhedral-structured polysiloxane-type compound containing alkenyl group and compound containing hydrosilyl group. The polyhedral-structured polysiloxane is liquefied at 20 degrees C. The polyhedral-structured polysiloxane-type compound containing alkenyl group comprises siloxane unit of formula: (AR22SiO-SiO3/2)a(R33SiO-SiO3/2)b. The compound containing hydrosilyl group is cyclosiloxane containing hydrosilyl group and/or linear siloxane containing hydrosilyl group in a molecule terminal, preferably 1,3,5,7- tetrahydrogen 1,3,5,7- tetramethyl cyclotetrasiloxane. The polyhedral-structured polysiloxane containing hydrosilyl group contains structural unit of formula: (XR42SiO-SiO3/2)a(R53SiO-SiO3/2)b.a+b=6-24;a=1 or more;b=0 or 1;A=alkenyl;R2,R4=alkyl or aryl;R3=H, alkyl, aryl, or group bonded with other polyhedral-structured polysiloxane;R5= R3 or alkenyl;X=group of formula: -(CH2)l(-Si(-R)(-R)-O)m-Si(-R)(-R)-Y' or group of formula (i);l,n=2 or more;m=0 or more;Y',Z=H, alkenyl, alkyl, aryl or portion bonded with polyhedral-structured polysiloxane through alkylene chain, where at least 1 of Y' or Z is H;andR=R3.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electroconductive composition further comprises conductive support agent (C), and anion compound (D) other than conjugated-type polyanion (A).    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The conjugated-type conductive polymer (B) is polythiophene.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The non-crystalline polyester polyol (A) is orthophthalic acid or its anhydride, naphthalene 2,3-dicarboxylic acid or its anhydride, naphthalene 1,2-dicarboxylic acid or its anhydride, polyhydric carboxylic acid or its anhydride, anthraquinone 2,3-dicarboxylic acid or its anhydride and/or 2,3-anthracene dicarboxylic acid or its anhydride. The polyhydric alcohol is diol chosen from ethylene glycol, propylene glycol, butylene glycol, neopentyl glycol and cyclohexane dimethanol, and functionality of 3 or more polyol.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The adhesive agent contains crystalline polyester. The curing agent is polyisocyanate. The non-crystalline polyester polyol (A) is polyester polyol compound having isocyanuric ring of formula (I).R1-R3=-(CH2)n1-OH or -(CH2)n2-O-(C(=O)-X-C(=O)-O-Y'-O)n3-H;n1,n2=2-4;n3=1-5;X=1,2-phenylene, 1,2-naphthylene, 2,3-naphthylene, 2,3-anthraquinone diyl, 2,3-anthracenediyl, or optionally substituted arylene;andY'=2-6C alkylene.
TECHNOLOGY FOCUS - METALLURGY - Preferred Plate: The pit occupied area rate of plate is 85% or more, and average surface roughness of plate is 0.05-0.20 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameters: The inorganic dehumidification agent has pH of 4-6.5, specific surface area of 600-800 g/m2, and pore diameter of 2-5 nm. Pore volume is 0.3-1.0 ml/g. Average particle diameter is 3-10 mu m.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The barrier layer (B) is orthophthalic acid or its anhydride, naphthalene 2,3-dicarboxylic acid or its anhydride, naphthalene 1,2-dicarboxylic acid or its anhydride, polyhydric carboxylic acid or its anhydride, anthraquinone 2,3-dicarboxylic acid or its anhydride and/or 2,3-anthracene dicarboxylic acid or its anhydride. The polyhydric alcohol is diol chosen from ethylene glycol, propylene glycol, butylene glycol, neopentyl glycol and cyclohexane dimethanol, and functionality of 3 or more polyol. The gas-barrier film further has sealant layer (D).    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The barrier layer (B) contains crystalline polyester. The curing agent is polyisocyanate. The barrier layer (B) is polyester polyol compound having isocyanuric ring of formula (I).R1-R3=-(CH2)n1-OH or -(CH2)n2-O-(C(=O)-X-C(=O)-O-Y'-O)n3-H;n1,n2=2-4;n3=1-5;X=1,2-phenylene, 1,2-naphthylene, 2,3-naphthylene, 2,3-anthraquinone diyl, 2,3-anthracenediyl, or optionally substituted arylene;andY'=2-6C alkylene.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The content of hydrolysis product is 100 wt.% or less with respect to acrylic resin. The acrylic resin has a weight average molecular weight of 4000-50000. Preferred Properties: The vapor-deposited film layer is transparent. On the vapor-deposited film layer, a gas-barrier coating layer (17) is formed as the dry film of a thin film formed using a coating liquid containing a water-soluble polymer, and an alkoxysilane or its hydrolysis product.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organoaluminum compound is trialkylaluminum, preferably trimethylaluminum, triethylaluminum, or triisobutylaluminum. The reaction material of organoaluminum compound and organic silane compound is of formula (III).R5,R6=R3;andR7=R1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of oxygen in copper-gallium alloy sputtering target is 0.2 %mass or less. The variation of gallium concentration in copper-gallium alloy sputtering target is 3 %mass or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layer: The thickness of mixed layer is 1-50 mu m.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The polyimide film is obtained by reaction of diamine having benzoxazole structure and tetracarboxylic acids. Preferred Property: The 180 degrees peeling strength between the substrate and polyimide film in the easy separation portion is 1/2 or less with respect to 180? peeling strength between the substrate and polyimide film in the favorable adhesion portion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The pulsed light has irradiation time of 10 milliseconds to 20 mu s and irradiation interval of 99.98 milliseconds to 200 mu s. Preferred Process: The film-like material is irradiated from the light source in which pulsed light is equipped with a flash lamp. The pulse light irradiation is performed at room temperature. Preferred Components: The pulsed light is electromagnetic waves at wavelength of 1 pm to 1 m or 10 nm to 1000 mu m. The flash lamp is xenon flash lamp. The light source of pulsed light is light source which irradiates pulsed light repeatedly. The optical absorption material is carbonaceous material. The optical absorption material has light absorbency at wavelength of 180-4000 nm in the composition containing silane compound.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The silane compound is cyclic silane compound of formula (II) or linear silane compound having silicon-containing compound of formula: -(Si(-R3)(-R4))y-.R1,R2=H, 1-20C alkyl, 6-20C aryl, or 7-20C aralkyl;R3,R4=R1 or including hydroxy;x=4-20;andy=3-1000.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyimide (I) is preferably of formulae (II)-(VIII).
TECHNOLOGY FOCUS - METALLURGY - The precursor layer consists of silicon phosphorus, antimony, boron, aluminum, gallium and indium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor device contains several carbon nanotubes with different diameters. The carbon nanotubes having P-type end portion is bonded with electrode (10) through intercalant (b1), and N-type end portion is bonded with electrode (12) through intercalant (b2). The electrode (12) is spaced apart and positioned from electrode (10). The intercalant (b1) is an atom, which is lithium, sodium and/or potassium. The intercalant (b2) is an atom, which is fluorine, chlorine and/or bromine.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The liquid composition comprises the alkene (0.01-20, preferably 0.2-10 wt.%). Preferred Components: The dialkyl zinc is diethyl zinc. The alkene is a cycloalkene, cycloalkediene, cyclotriene, or cyclotetraene (preferably cyclopentene, cyclohexene, trans,trans-1,4-diphenyl-1,3-butadiene, 1,2,3,4,5-pentamethylcyclopentadiene, 1,4-cyclohexadiene, 1-methyl-1,4-cyclohexadiene, 1,3,5,7-cyclooctatetraene, and 1,6-diphenyl-1,3,5-hexatriene). EXAMPLE - No suitable example is given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The paste comprises at least one etching medium (5-90 wt.%) and nickel particles (5-90 wt.%). The nickel particles exhibit a size of 20 nm-50 mu m. The paste is substantially free of glass frit. The passivation layer comprises at least one dielectric comprising silicon nitride, silicon oxide, aluminum oxide and silicon carbide and/or amorphous silicon. The etching medium contains at least one form of phosphoric acid, phosphoric acid salts and/or phosphoric compounds. The etching medium comprises an inorganic mineral acid including hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid and nitric acid, and/or an inorganic acid which has an alkyl radical having 1-10C including alkyl carboxylic acids, the hydroxycarboxylic acids and dicarboxylic acids including formic acid, acetic acid, lactic acid and oxalic acid and/or a caustic alkaline compound including potassium hydroxide or sodium hydroxide. The metal contacts exhibit nickel silicide at a boundary surface to the silicon substrate. The metal contacts are adjacent on the side of the passivation layer. Preferred Method: The method further comprises: heating the paste to 200-600 degrees C, preferably 200 degrees C for a period of 1 second-10 minutes; thickening of a nickel contact structure (11) formed by the applied printable paste by applying an additional conductive layer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of sodium tripolyphosphate, n-butyl naphthalene sulfonate in additive is 5-10 wt.%, and 1-5 wt.%, respectively. The additive further contains 0.1-0.5 vol.% of corrosive liquid. The corrosive liquid is sodium hydroxide or potassium hydroxide aqueous solution. The content of sodium hydroxide or potassium hydroxide in aqueous solution is 0.5-3 wt.%. Preferred Property: The additive provides the monocrystalline silicon wafer with average surface reflectance of 8-10% at wavelength of 400-1100 nm.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass-making feedstock contains (in %mass) silica (50-75), alumina (3-20), boron trioxide (0-20), magnesium oxide (0-15), calcium oxide (0-15), barium oxide (0-15), magnesium oxide, calcium oxide, strontium oxide and barium oxide (1-30), zinc oxide (0-5), lithium oxide (0-5), sodium oxide (0-10), potassium oxide (0-15), lithium oxide, sodium oxide and potassium oxide (0-24), zirconia (0.5-10) and phosphorus pentoxide (0-0.0018).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The catalytic active component is platinum, palladium, rhodium, ruthenium, iridium, cobalt, manganese, tungsten, gold, silver and rhenium. The support material is titanium oxide, gamma -aluminum oxide, theta -aluminum oxide, Delta -aluminum oxide, cerium oxide, silicon oxide, zinc oxide, magnesium oxide, aluminum silicon oxide, silicon carbide, magnesium silicate, zirconia and/or titanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The matrix phase (A) comprises free volume of 2-20%, preferably 5-20%. The solid component further contains matrix phase (B) including homogeneous or non-homogeneous amorphous structure, crystals or crystallites, and/or closed or open pores. The matrix phases (A) and/or (B) comprise metallic or non-metallic component, preferably oxide component.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The extended surfaces of metal material contained in a part of the second portion of the reforming mixture flow path are made of stainless steel or a metal alloy having nickel content of greater than 80 wt.%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The passivation layer is formed by forming a third passivation layer formed of silicon oxynitride on the second passivation layer.    TECHNOLOGY FOCUS - METALLURGY - The front electrode is formed by coating a paste containing silver. Another paste containing aluminum is coated on a remaining portion excluding a formation portion of electrode current collector patterns from the passivation layer.
TECHNOLOGY FOCUS - METALLURGY - The method enables doping a dopant into the graphene layers, where the dopant is selected from a group consisting of lithium, beryllium, boron, fluorine, aluminum, silicon, phosphorus, sulfur and chlorine. The support substrate is made of a material selected from a group consisting of copper, silicon, sapphire, silicon oxide, silicon dioxide, quartz, and glass. The method enables using reactive gas including hydrogen and oxygen. The carbon-soluble layer is made of metal such as nickel, cobalt, iron, palladium, platinum or alloy.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The method enables using reactive gas including tetrafluoromethane.
TECHNOLOGY FOCUS - POLYMERS - Preferred Elastomer: The thermoplastic elastomer is copolymer of ethylene and 1-octene.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Vegetable oil is waste tempura oil.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: Three or more types of silane compounds are used. The content of silane compound in which n is 1 and R1 is alkyl substituted with fluoro is 5-50 mol%. The content of silane compound in which n is 0 is 15-50 mol%. The content of silane compound in which n is 1 and R1 is 1-6C unsubstituted alkyl is 20-70 mol%. The content of silane compound in which n is 2 and R1 is 1-6C unsubstituted alkyl is 3-15 mol%. The solvent used during hydrolytic condensation is cyclohexanone, isopropanol and/or 1-methoxy-2-propanol.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The reaction liquid containing silicone resin is mixed with butyl acetate and/or isopropanol. The concentration of silicone resin is set to 0.5-20 wt.%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The barrier layer is arranged on the light-reflective metal layer by closely contacting. Preferred Component: The barrier layer contains inorganic oxides.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The vapor-deposition material has volume density of 0.9-1.5 g/cm3. Preferred Composition: The silicon dioxide powder contains 20% or more of crystal structure.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The linear polymeric compound is polyallylate resin with structure of formulae (1)-(5).R11-R14=H or substituent each independently;R15-R18=substituent each independently;R21-R26=H or substituent each independently, and greater than or equal to 1 represents a substituent;R31-R38=H or substituent each independently;X=substituent, coupling group as which a part of ring structure may be sufficient and may couple even at R31-R34, and may form ring structure;R41,R51-R52=substituent each independently;m,k,n=0-3. Preferred Definitions:    R15-R18=F, Cl, Br, 1-4C alkyl group, Ph or methoxy group each independently; and    R21-R26=R15, H, halo, alkyl, aryl or alkoxy.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of carbon contained in the copper selenide particle powder is less than 0.1 %mass. The copper source is chosen from basic copper carbonate powder, copper carbonate powder and copper oxide powder. The selenium source is chosen from selenium powder and selenium dioxide powder. The reducing gas is hydrogen gas or a mixed gas of hydrogen gas and inert gas. The average primary particle diameter of the copper selenide particle powder is 20-200 nm. The primary particle size of copper selenide particle powder is less than 2 mu m. Preferred Method: The method further involves adding a solvent to the components (A and B) and mixing. The material (a) is preferably baked at 250-340 degrees C.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The polyol is ethylene glycol, diethylene glycol, 1,3-propanediol, 1,4-butanediol, glycerol, 1,2,4-butane triol, and/or 1,2,5-pentane triol. The coating composition further comprises alkylene glycol monoalkyl ether of formula: HO-((CH2)p-O-)q-(CH2)rH (II), preferably ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether and/or 3-methyl-3-methoxy butanol, and solvent chosen from propylene-glycol-monomethyl-ether acetate and/or butyl acetate.p,r=1-6;andq=1-3.    TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The siloxane resin has weight average molecular weight of 400-20000. Preferred Component: The siloxane resin has silsesquioxane structure.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Conditions: The favorable adhesion portion and easy separation portion are formed by inactivation process to a portion of coupling-agent-processed layer and forming a specific pattern, after coating and shielding, by carrying out blasting, vacuum plasma processing, atmospheric pressure plasma processing, corona treatment, actinic radiation irradiation treatment, activated gas process, and/or chemical solution process. The actinic radiation process is UV irradiation process.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The resin layer consists of a polyimide obtained by reacting an aromatic diamine and an aromatic tetracarboxylic acid. 70 Mol% or more of aromatic diamine has a benzoxazole structure, diaminodiphenylether structure, and/or phenylenediamine structure. 70 Mol% or more of aromatic tetracarboxylic acid consists of pyromellitic dianhydride and/or biphenyl tetracarboxylic acid dianhydride. Preferred Properties: The 180 degrees peeling strength between the inorganic layer and resin layer in the easy separation portion is 1 N/cm or more with respect to that in the favorable adhesion portion. The 180 degrees peeling strength between the inorganic layer and resin layer in the easy separation portion is 50% or less of that in the favorable adhesion portion. The thickness of resin layer is 0.5-50 mu m, and the linear expansion coefficient in the surface direction of the resin layer is -5 ppm/ degrees C to +35 ppm/ degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - A glass surface is coated with a film element that is made of silicon dioxide.    TECHNOLOGY FOCUS - METALLURGY - The glass substrate is made of ferrous/silicon (F/Si).
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The liquid non-solvent ultraviolet curable resin composition contains urethane (meth)acrylate resin, and photoinitiator(s) having maximum ultraviolet-ray absorption peak wavelength of 300-400 nm. The polyol used for manufacture of urethane (meth)acrylate resin is polyether polyol, polycarbonate polyol and/or hydrogenated polybutadienepolyol. Preferred Properties: The illumination intensity at the time of irradiating ultraviolet-ray is 0.05-8 W/cm2. The viscosity of liquid non-solvent ultraviolet curable resin composition is 200-50000 mPa.second at 25 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The blocking layer containing barium titanate, magnesium oxide and/or aluminum oxide, is laminate of barium titanate layer and magnesium oxide layer. The optical absorber includes semiconductor chosen from antimony sulfide, lead sulfide, lead-tin-selenium alloy (Pb-Sn-Se(1-n), where n is not defined), cadmium selenide and lead-cadmium-selenium alloy (Pb-Cdn-Se(1-n)). The semiconductor further includes bismuth, zinc, and/or titanium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The hole transportation layer contains copper(I) thiocyanate, copper(I) iodide, poly(3-hexylthiophene), and 2,20,7,70-tetrakis-(N,N-di-p-methoxyphenylamine)-9,90-spirobifluorene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The atomic ratio of iridium to platinum metal is 0.1:1-10:1, preferably 1:1-3:1, more preferably 1.5:1-2.5:1. The platinum to ruthenium metal is 1:1-4:1, preferably 1:1-3:1, more preferably 1.5:1-2.5:1. Preferred Components: The shell comprises platinum metal and ruthenium metal. The metal is supported to carbon. EXAMPLE - None given.
TECHNOLOGY FOCUS - POLYMERS - Preferred Product: The sheetlike material comprises water-soluble polyester resin in an amount of more than 3 g/m2 and water adsorbent in an amount of less than 30 %mass. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): A halogen component of formula: N(-R4)(-R5)-A-B'-X and silylating agent of formula: HSiR1R2R3 are reacted in presence of base, and tris(dibenzylideneacetone)dipalladium(0) to obtain nitrogen-containing compound (I).X=halo. SPECIFIC COMPOUNDS - 68 Nitrogen-containing compounds e.g. N,N-dimethyl-4-((E)-2-(4-(triethoxysilyl)phenyl)diazen-1-yl)aniline of formula (IA), 4-((E)-2-(4-(diethoxy(methyl)silyl)phenyl)diazen-1-yl)-N,N-dimethylaniline, 4-((E)-2-(4-(ethoxydimethylsilyl)phenyl)diazen-1-yl)-N,N-dimethylaniline, N,N-dimethyl-4-((E)-2-(4-(trimethylsilyl)phenyl)diazen-1-yl)aniline, and 4-((E)-2-(4-(diethoxy(phenyl)silyl)phenyl)diazen-1-yl)-N,N-dimethylaniline are disclosed.    EXAMPLE - 4-(4-Bromo-phenylazo)-N,N-dimethyl aniline (2 mmol), triethoxysilane (3 mmol), tris(dibenzylideneacetone)dipalladium (0.03 mmol), (2-biphenyl)di-t-butyl phosphine (6 mmol) and dimethyl formamide (4 ml) were stirred at 60 degrees C for 3 hours, cooled to room temperature, and chloroform (10 ml) and water (10 ml) were added, and oil-and-water liquid separation was performed. The resultant organic layer was purified to obtain N,N-dimethyl-4-((E)-2-(4-(triethoxysilyl)phenyl)diazen-1-yl)aniline (IA) (0.35 g) having yield of 45.2%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Ceramic slurry containing inorganic filler and inorganic binder material, is coated on surface(s) of the porous film. Preferred Composition: The inorganic filler is calcium carbonate, alumina, silica, barium titanate, titania, talc, aluminum hydroxide and/or aluminumoxy hydroxide, and has diameter of 0.1-2 mu m.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The ceramic slurry comprises 0.1-30 wt.% of water-soluble polymer, 1-40 wt.% water-soluble particulate-form polymer formed by emulsion polymerization or suspension polymerization method, 1-50 wt.% of inorganic filler and 20-70 wt.% of water. The water-soluble polymer is methyl cellulose, carboxymethyl cellulose and their salt, associated urethane-type polymer and/or alkali swelling acrylic resin. The particulate-form polymer is acryl-type copolymer, methacryl-type copolymer, (meth)acryl styrene copolymer, (meth)acryl acrylonitrile copolymer, silicone-acryl-type copolymer, epoxy-acryl-type copolymer, polybutadiene, polyisoprene, butadiene-styrene random copolymer, isoprene-styrene random copolymer, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-styrene copolymer, butadiene-styrene block copolymer, and/or styrene-butadiene-styrene block copolymer. Preferred Properties: The particle diameter of particulate-form polymer is 0.01-1 mu m. The ratio of average hole diameter (A1) with respect to average hole diameter (A2) in porous film is more than 1.5. The ratio of solid phase paraffinic oil with respect to liquid phase paraffinic oil is 1:0.8-1:2. The porous film has thickness of 10-30 mu m, porosity of 30-50%, permeability of 100-400 seconds/100 ml and tensile strength of 1000-3000 kgf/cm2 at 150 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method involves using 2.05-2.15 atomic percentage of tin and intrinsic tin oxide. The deposited intrinsic tin oxide has a thickness of 30-150 nm .
TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): The high molecular compound having aromatic structural unit (I), is obtained by polymerizing an organic compound of formula (XVIIA), or polymerizing an organic compound of formula (XVIIB), and ionizing obtained high molecular compound having aromatic structural unit of formula (XVIIB'). The high molecular compound having structural unit (II), is obtained by polymerizing organic compound of formula (XXA), or polymerizing an organic compound of formula (XXB), and ionizing obtained high molecular compound having aromatic structural unit (XXB').R14'=R1;R14"=groups of formulae (ii) or (iii);R15,R19=R2;andR18'=R6.Preferred Composition: The layers containing high molecular compound are electron injection layer and/or electron carrying layer. The high molecular compound having aromatic structural unit (I) or (II), further has aromatic structural unit of formula (X) or (XI).R10=R1;R11,R13=R2;R12=R6;andm10=0 or more. EXAMPLE - (In g) ethyl 5-(2,7-dibromo-9-methyl-9H-fluoren-9-yl)-2-(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)benzoate (0.47), ethyl 2-(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-5-(9-methyl-2,7-bis(3,3,4,4-tetramethyl-1,2,5-bromadioxolan-1-yl)-9H-fluoren-9-yl)benzoate (0.48), dichlorobis z (triphenylphosphine)palladium (0.6 mg), tetrabutyl ammonium bromide (6 mg), toluene (6 mL), and sodium carbonate aqueous solution (2 mol/L) were provided into reaction container under argon atmosphere, stirred at 105 degrees C for 6 hours, to obtain reaction mixture. Phenylboronic acid (35 mg) was added and stirred at 105 degrees C for 14 hours, and sodium-diethyldithiocarbamate trihydrate (0.65) and water (13 mL) were added to the obtained reaction mixture, and stirred at 80 degrees C for 2 hours, dripped, and precipitates were recovered by filtration and dried. The eluate was dripped, and dried, to obtain high molecular compound having aromatic structural unit (I) or (II).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): A condensation polymerization of raw material containing compound of formula: Y3-Aa-Y4, and contains one or more types of ion, is performed, to obtain high molecular compound (I). The condensation polymerization of raw material containing compound of formula: Y3-Aaa-Y4, and does not contains ion, is performed, to obtain high molecular compound (I).Aa=bivalent group;Y3,Y4=group used for condensation polymerization;Aaa=-R7-((Q3)n6-Y5)m9;R7=(1+m9) valence organic group;Q3=divalent organic group;Y5=-CO2R'2, -SO3R'2, -SO2R'2, -PO3(R'2)2 or -B(R'2)2;n6=0 or more;R'2=6-50C aryl optionally substituted by optionally substituted 1-30C alkyl;andm9=1 or more. Preferred Definitions:    Ar1=(2+n3) valence aromatic group obtained by removing hydrogen from compounds (A) chosen from benzene, naphthalene, anthracene, phenanthrene, 4,5-dihydro-pyrene, 9H-fluorene, 7H-benzo(c)fluorine, 9,9'-spirobi(fluorene), 6,12-dihydro-indeno(1,2-b)fluorine, pyridine, pyrazine, pyrimidine, (1,3,5)triazine, 5,6,7,8-tetrahydro-quinoline, 5,6,7,8-tetrahydro-quinoxaline, (1,10)phenanthroline, 9H-carbazole or dibenzofuran;and    Ar2=(2+n4+n5) valence aromatic group obtained by removing hydrogen from compounds (A).    EXAMPLE - (In mL) high molecular compound was provided into flask (100) and mixture was heated at 55 degrees C. Aqueous solution was dissolved in cesium hydroxide and monohydrate (120 mg), and water was added and stirred at 55 degrees C for 6 hours, to obtain reaction solvent. The obtained solvent was distilled after cooling mixture to room temperature, and solid was obtained by cleaning the solid which arose with water and drying under reduced pressure, to obtain conjugated polymer compound containing aromatic structural unit (I) or (II).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The crown ether is 18-crown-6 or 15-crown-5. The lithium ion-containing crown ether is of formula: Li2(18-crown-6)3(M(dmit)2)2(H2O)4 or Li2(15-crown-5)3(M(dmit)2)2(H2O)2.dmit=1,3-dithiol-2-thione-4,5-dithiolate;andM=Ni, Pd, Au, or Pt, preferably Ni.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Compound: The phenazine-type compound is preferably silicon-containing compound of formula (II).R',R",R'"=H or linear, branched or cyclic 1-20C alkyl or alkoxy, linear, branched or cyclic 2-20C alkenyl, linear, branched or cyclic 2-20C alkynyl, linear, branched or cyclic 2-20C alkylcarbonyl, 4-20C aryl or heteroaryl, 4-20C arylalkyl or heteroarylalkyl, 4-20C aryloxy or heteroaryloxy, or 4-20C arylalkyloxy or heteroarylalkyloxy (all optionally substituted by groups (L'));andL'=group L, which is different from silyl or germyl.Preferred Components: The organic solvents are organic binders or precursors. Preferred Property: The organic solvents have permittivity of 3.3 or less at 1000 Hz. SPECIFIC COMPOUNDS - 3 Phenazine-type compounds i.e. 5,9,14,18-tetrakis((triethylsilyl)ethynyl)indanthrene of formula (Ia), 5,9,14,18-tetrakis((cyclopentyldiethylsilyl)ethynyl)indanthrene and 5,9,14,18-tetrakis((cyclohexyldiethylsilyl)ethynyl)indanthrene are disclosed.    EXAMPLE - (In g) solution of triethylethylnylsilane (2.245) was added in dioxane at 0 degrees C for 5 minutes, to obtain off-white suspension. The cooling bath was removed, and solution was stirred at 22 degrees C for 30 minutes. Indanthrene-5,9,14,18-tetraone (0.881) was added in one portion and dark green mixture was sonicated for 2 minutes, to obtain brown solution. Ammonium chloride was added and the mixture was stirred at 22 degrees C for 1 hour. The upper brown organic layer was separated and suction filtered to remove the insoluble impurities, and filtrate was vacuum-evaporated. The mixture was stirred at 120 degrees C for 40 minutes, cooled and concentrated to dryness, to obtain 5,9,14,18-tetrakis((triethylsilyl)ethynyl)indanthrene.
Preferred Definitions:    R1,R2=methyl.    EXAMPLE - Zinc chloride (1 mol part), sodium methylate (2 mol parts) and methanol were mixed, stirred at room temperature for 30 minutes and the precipitated sodium chloride was filtered and separated. Methyl acetoacetate (2 mol parts) and methanol were added to the resulting solution, and the resulting filtrate was stirred at room temperature for 30 minutes. The obtained precipitate was washed and dried with methanol to obtain zinc-methyl-acetoacetate complex. N,N,N',N'-tetramethylethylenediamine and hexane were added to the obtained complex, stirred and refluxed for 1 hour and the resulting solution was recrystallized to obtain zinc compound with an yield of 97%. The obtained zinc compound was dissolved in methyl acetate to obtain zinc oxide composition.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The aluminum-gallium-arsenic/aluminum-arsenic (AlxGa1-xAs/AlAs) comprises aluminum-gallium-arsenic (AlxGa1-xAs) and aluminum-arsenic (AlAs) having thickness of 10-200 nm and concentration of 1 x 1017-1 x 1019 /cm3. Preferred Process: The three-junction solar cell manufacturing method further involves utilizing germanium substrate and diffusion of phosphorus/arsenic.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The workpiece comprises compound semiconductor, magnetic material, and silicon.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The D-A-D rod comprises porphyrin or perylene bisimide. Preferred Process: Formation of photoactive layer further involves using chiral ligand (13).
TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Components: The removal fluid removes the ink layer and the conductive layer in contact with the ink layer.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The intrinsic conductive polymer comprises: either poly(3,4-ethylenedioxythiophene) or pyrroles; or silane. The conductive layer comprises: a surfactant, which further comprises either a UV absorber or light stabilizing agent; and comprises a binder, which further comprises polyurethane, polyester or acrylic.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The metal is at least one chosen from zinc, indium, gallium, aluminum, silicon, germanium and tin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The fluorine-containing gas is xenon difluoride, bromotrifluoride, pentafluorobromide and/or ammonium trifluoride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The additional trace element is aluminum, gallium or indium. The atomic ratio of aluminum is 0.001-0.005 with respect to total amount of zinc, titanium and aluminum. The atomic ratio of gallium is 0.001-0.005 with respect to total amount of zinc, titanium and gallium. The atomic ratio of indium is 0.001-0.005 with respect to total amount of zinc, titanium and indium. Preferred Condition: The raw material powder is annealed under nitrogen, argon, helium, carbon dioxide and/or hydrogen atmosphere.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The main component of photoelectric converting layer is compound semiconductor(s) containing group VIb element chosen from at least one of selenium, sulfur and tellurium, group IIIb element chosen from at least one of aluminum, gallium and indium, and group Ib element chosen from at least one of copper and silver.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The reaction liquid further contains trisodium citrate having concentration of 0.001-0.25 M.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The gas or liquid contains hydrogen fluoride or hydrofluoric acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metallic ion is silver ion or palladium ion, where the palladium ion is obtained from palladium chloride. The catalyst solution comprises (in %): hydrofluoric acid (0.1-10), hydrochloric acid (0.1-10) and palladium chloride (1-100 mg/l). The acidic etching solution is hydrofluoric acid. The basic etching solution is ammonium fluoride. The oxidant is hydrogen peroxide or nitric acid. The metallic ions have a size of 0.5-100 nm. Preferred Method: The method further involves treating the substrate with alkaline solution, preferably potassium hydroxide. The substrate is treated with the substrate for 45 seconds, preferably 30-35 seconds. The substrate solution is applied with catalyst solution by spray-coating, floating, pouring, roller coating, nozzle coating, lubrication film coating, or squeezing process.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The film (C) is further formed on the glass board material. Preferred Composition: The film (A) is prism film. The film (B) is barrier film which suppresses transfer of alkali-metal ion from the glass board material. The film (C) is transparent conductive film. The film (A) contains titanium oxide. The film (B) contains alumina or magnesium oxide. The film (C) contains fluorine-doped tin(II) oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The iron(III) salt is chosen from iron chloride, iron sulfate, iron nitrate, iron fluoride, iron iodide, iron sulfide, iron sulfite, iron phosphate, iron nitrite, iron carbonate and iron acetate. The protic acid is chosen from hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, acetic acid and citric acid. The etching solution has pH of 0.5-6. The zinc oxide layer has resistivity of less than 10-2 ohm.cm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - A silicon-containing precursor such as hexamethyl disiloxane (HMDSO), tetra ethoxy silane (TEOS), hexamethyl disilazane (HMDSN) is introduced as a starting material for the PECVD process in the vacuum chamber.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The hydrated silicate is silicic acid. The silicon oxide film is an anti-reflective coating. The wafer is solar cell wafer or single crystal silicon (100) wafer, multi-crystalline wafer, or phosphor doped wafer. Preferred Method: The deposition is accomplished at 60-90 degrees C. The method further comprises exposing the wafer to the wet chemical solution contact print film deposition.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The content of glass fiber in the fiber optic paper is 70-90 weight%. The fiber optic paper further comprises (in weight%) fibrillated or non-fibrillated acrylic fiber (20), and polyvinyl alcohol fiber binder (10). The content of liquid phenolic resin is 20-50 g/m2. The content of fiber optic paper is 40-44 g/m2 or 20-24 g/m2. The hardened resin content of fiber optic paper is 26-40 weight% or 35-55 weight%. Preferred Properties: The fiber optic paper has specific gravity of 0.5 g/cc or more and Gurley air permeability of 200 cfm or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The chloride salts have metal ions of metals comprising alkaline metals, alkaline earth metals or transition metals. The chloride salts are sodium chloride (15-25 wt.%, preferably 20 or 22 wt.%), potassium chloride (10-35 wt.%, preferably 15 or 27 wt.%), magnesium chloride (5-20 wt.% preferably 12 wt.%, or 45-65 wt.% preferably 53 wt.%) or manganese chloride (45-65 wt.%, preferably 50-60 wt.%). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The raw material comprises nitrogen gas, silicone fume, hydrogen, trimethyl gallium, biscyclopentadienyl magnesium, trimethyl aluminum and trimethyl indium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The sulfur-depth profile is formed such that a relative change in the sulfur content, at least over a portion of the depth profile, is at least 10%. A layer stack of individual layers of copper, zinc and tin is sequentially deposited several times, and/or the layer stack of individual layers of chalcogens comprising sulfur or selenium is sequentially deposited several times. The precursor layer stack is sequentially deposited several times. The first precursor layer is formed such that the copper content is less than the total amount of zinc and tin, and the zinc content is greater than the tin content. The two precursor layers are formed such that the ratio of the total content of the chalcogen to the total content of the metals is greater than or equal to 1. Preferred Method: The process gas is supplied during at least one second time interval. The second time interval is shorter than a first time interval, in which the heat treatment is carried out. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - The transparent support comprises glass.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The patterned layer of functional material comprising dielectric material comprises material selected from aluminum oxide, silicon oxide, and/or silicon nitrides. The patterned layer of functional material comprising conductive material comprises material selected from transparent conductors such as indium-tin oxide (ITO), ZnO, SnO2, In2O3, metals, degenerately doped semiconductors, carbon ink, and/or sinterable metal nanoparticle suspensions. The patterned layer of functional material comprising semiconductive material comprises material selected from zinc oxide, and/or tin oxide.    TECHNOLOGY FOCUS - POLYMERS - The patterned layer of functional material comprising dielectric material comprises material selected from organic polymers. The patterned layer of functional material comprising conductive material comprises material selected from conducting polymers, and/or silver-epoxy. The transparent support comprises flexible polymer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The group VI transition metal carbide and/or group VI transition metal dioxide, are molybdenum and/or tungsten. Preferred Properties: The average primary particle size of nanoparticles containing group VI transition metal carbide and/or group VI transition metal dioxide, before melting is 1-15 nm. The average primary particle size of nanoparticles containing transition metal carbide, is 1-15 nm. Preferred Process: The thin film is formed by printing a coating liquid containing nanoparticles of group VI transition metal carbide and/or group VI transition metal dioxide, on base material in pattern shape. Before baking the thin film is dried under air at 200-400 degrees C.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: A protective agent having an organic group is coupled to nanoparticles, by a coupling group. The coupling group is chosen from at least one of functional groups of formulae: -C(=O)-H, -C(=O)-OH, -C(=O)-Z1, -C(=O)-, -O-P(=O)(-Z2)-Z1, -S(=O)2-OH, -S(=O)2-Z1, -Si(-Z1)(-Z3)-Z2, -O-Si(-Z1)(-Z3)-Z2, -NH2, -C(-SH)(=S), -SH, -C(-R)=CH2, and/or group of formulae (I) or (II).Z1-Z3=halo, H or alkoxy;andR=H or methyl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The coating film has iron-chromium-based oxide layer in the vicinity of the boundary between the coating film and base of the reaction tube.    TECHNOLOGY FOCUS - METALLURGY - Preferred Material: The reaction tube is made of stainless metal material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The group IA dopant material is provided in an amount of 0.03-3 atomic% of copper in the precursor layer. The group IA material comprises sodium, lithium or potassium. Group VA material chosen from bismuth, arsenic and antimony is further contained.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The molar ratio of lithium or potassium with respect to silicon in alkali-metal silicate layer is 0.001-1. The total content of molar ratio of lithium or potassium and the molar ratio of sodium with respect to silicon is 1 or less. The alkali-metal silicate layer contains boron or phosphorus. The substrate is a metal substrate. The anodized aluminum film (20) formed on the surface of the metal substrate is a porous type anodized aluminum film. The alkali metal is sodium, lithium or potassium. The alkali-metal silicate layer contains silicon, alkali metal and element chosen from group-15 element other than nitrogen, preferably phosphorus and group-13 element other than aluminum, preferably boron. The molar ratio of total content of group-15 element and group-13 element is 0.15 or less. The photoelectric conversion semiconductor layer (50) of photoelectric conversion element contains chalcopyrite structure of group Ib element chosen from copper and silver, group IIIb element chosen from aluminum, gallium and indium, and group VIb element chosen from sulfur, selenium and tellurium. Preferred property: The thickness of alkali-metal silicate layer is 2 mu m or less.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The metal substrate is a clad material which is formed by incorporating one or both surfaces of aluminum, stainless steel or steel substrate by aluminum plate.
TECHNOLOGY FOCUS - METALLURGY - The support is made of material selected from a group consisting of aluminum, stainless steel and brass.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The arithmetic mean roughness in the surface of the low-reflective film is 3-5 nm, measured by scanning probe microscope apparatus. The refractive index of the low-reflective film is 1.20-1.46. Preferred Composition: The content of elemental fluorine in the surface of the low-reflective film is 3-20 atomic%, measured by the X-ray photoelectron spectroscopy. The hollow microparticles are hollow silica microparticles. The matrix contains silica precursor as a main component, and structure derived from fluorine-containing ether compound having polyoxyperfluoroalkylene chain in a principal chain, and hydrolyzable silyl group at terminal(s) of principal chain. The silica precursor is hydrolysis-condensation product of alkoxysilane. The fluorine-containing ether compound is of formula: R11O(CF2CF2O)aCF2-(Q)b(-(CH2)d-SiLpR3-p)c.R11=1-20C monovalent perfluoro saturated hydrocarbyl or 2-20C monovalent perfluoro saturated hydrocarbyl in which ether oxygen atom is interrupted between carbon atom-carbon atom, and does not include -OCF2O-;a=1-200;b=0 or 1;d=2-6;L=hydrolysable group;R=H or monovalent hydrocarbyl;andp=1-3.(i) Q does not exist, when b is 0, (ii) Q is bivalent or trivalent coupling group, (iii) Q is optionally bivalent coupling group, when c is 1 ; and (iv) Q is optionally trivalent coupling group, when c is 2.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The primary diamine is isophorone diamine.    TECHNOLOGY FOCUS - POLYMERS - Preferred Polymer: The polyimide (B) is obtained by reacting primary amine of formula: H2N-R-NH2 and aromatic tetracarboxylic acid chosen from formulae (IV)-(VI) in organic solvent. The polyimide (A) is obtained by polymerizing trans-1,4-cyclohexane diamine and aromatic tetracarboxylic acid (IV)-(VI).X1-X6=hydroxy or chloro. EXAMPLE - (In parts mass) trans-1,4-cyclohexanediamine (2.8548) in N-methylpyrrolidone/toluene (36.7571) and biphenyl tetracarboxylic dianhydride (7.3555) in N-methylpyrrolidone/toluene were stirred at room temperature and heat-polymerized at 190 degrees C to obtain polyimide (A) with reduced viscosity of 2.05 dl/g. Isophorone diamine (4.2575) and biphenyl tetracarboxylic dianhydride (7.3555) in benzyl alcohol/pseudo cumene were heat-polymerized to obtain polyimide (B) with reduced viscosity of 2.52 dl/g. The prepared polyimide (A,B) were mixed to obtain a resin composition. The resin composition was cast on a glass substrate and dried at 200 degrees C to form transparent and uniform film with glass transition temperature of 340 degrees C, excellent solubility and linear thermal expansion coefficient of 15.4x 10-6 K-1.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The reinforcing material contains glass fiber, glass fiber cloth, glass fabric, glass nonwoven fabric, glass mesh, glass bead, glass powder, glass flake, colloidal silica and/or silica particles, preferably glass fiber cloth, glass fabric and/or glass nonwoven fabric. The content of reinforcing material in composite sheet is 5-95 vol.%. Preferred Process: A coating layer containing silicon nitride, silicon oxide, silicon carbide, aluminum nitride, indium tin oxide and/or indium zinc oxide is formed on at least one surface of matrix surface.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The ratio of elastic modulus of matrix at 25 degrees C and elastic modulus of reinforcing material at 25 degrees C is 10-7-10-2. The elastic modulus of matrix is 1x 105-1x 109 dyne/cm2. The display-device substrate has thermal expansion coefficient of 20 ppm/ degrees C or less. Preferred Composition: The matrix comprises silicone rubber, styrene-butadiene rubber, butadiene-based rubber, isoprene-based rubber, chloroprene, neoprene rubber, ethylene-propylene-diene terpolymer, styrene-ethylene-butylene-styrene block copolymer, styrene-ethylene-propylene-styrene block copolymer, acrylonitrile-butadiene rubber, hydrogenated nitrile rubber, fluorinated rubber and/or plasticized polyvinyl chloride.
TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): The high molecular compound having aromatic structural unit (I), is obtained by polymerizing an organic compound of formula (IV), or polymerizing an organic compound of formula (V), and ionizing obtained high molecular compound having aromatic structural unit (VI). The high molecular compound having structural unit (II), is obtained by polymerizing organic compound of formula (VIII), or polymerizing an organic compound of formula (IX), and ionizing obtained high molecular compound having aromatic structural unit (X).R11'=R1;andR15'=R6.Preferred Composition: The high molecular compound having aromatic structural unit (I) or (II), further has aromatic structural unit of formula: -(Ar1-((R10)m12))-.Ar1=aromatic-amine residue having valence of 2+m12 or aromatic group (all optionally substituted);R10=R2;andm12=1 or more. EXAMPLE - 2-(9,9-Bis(3,4-bis((2-(2-(2-methoxyethoxy)ethoxy)ethoxy))phenyl)-7-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-9H-fluoren-2-yl)-4,4,5,5-tetramethyl-1,3,2-dioxaborolane (1.09 g), ethyl 5-(2,5-dibromophenyl)-2-(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)benzoate (0.41 g), dichlorobis(triphenylphosphine)palladium (1.1 mg), methyltrioctyl ammonium chloride (8 mg), toluene (18 ml), and 2 mol/L of sodium carbonate aqueous solution (2 ml) were stirred at 105 degrees C for 23 hours, and subsequently phenylboronic acid (37 mg) was added and stirred at 105 degrees C for 6 hours. Water was added to the obtained mixture, and organic layer was concentrated under reduced pressure to obtain high molecular compound having aromatic structural unit (I) or (II).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of onium salt compound is 10 parts mass or more with respect to 100 parts mass of conductive polymer. The conductive polymer and onium salt compound are uniformly dispersed in the electroconductive composition. The onium salt compound is sulfonium-salt compound(s) of formulae: R22-S+(-R21)(R23).X- (I) and/or X-.S+(-R21)(-R23)-R24-S+(-R21)(-R23).X- (II) capable of generating an acid by the action of heat or active energy ray irradiation. The electroconductive composition contains moisture content of 0.01-15 %mass.R21-R23=phenyl optionally substituted by chloro;R24=alkylene or arylene;X-=alkyl or arylborate anion;andor adjacent R21-R23=aliphatic ring, aromatic ring or heterocyclic ring.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The conductive polymer is a conjugated polymer having repeating unit derived from monomer(s) chosen from thiophene type-compound, pyrrole type-compound, aniline type compound, acetylenic compound, p-phenylene type-compound, p-phenylene vinylene type-compound, p-phenylene ethynylene type-compound and their derivatives, preferably thiophene compound. The conductive polymer has thiophene-based repeating unit(s) of formulae (i)-(v). The electroconductive composition further contains a solvent.R1-R13=H, halo, alkyl, alkoxy, perfluoroalkyl, perfluoroalkoxy, amino, alkylthio, polyalkyleneoxy, acyloxy, or alkyloxycarbonyl;Y'=C, N or Si;andn=1 or 2.Preferred Components: The base material is resin film. The electroconductive laminate further has an electrode.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The n+1-th layer at the side of the base film in the inorganic thin film layer is a layer which consists of a compound containing a type metal or a 3d transition metal, oxygen, and/or nitrogen. The n+1-th layer at the side of the base film in the inorganic thin film layer is a layer which consists of aluminum oxide, or a silicon compound containing oxygen and/or nitrogen. The thickness of first layer is 0.1-500 nm. The thickness of n+1-th layer is 0.1-500 nm, preferably 0.1-50 nm.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyether compound includes an oxirane monomeric unit (M1) having a cationic group, and an oxirane monomeric unit (M2) having a crosslinkable group as separate repeating units. The oxirane monomeric unit (M1) is repeating unit of formula: -(O-CH(-A+X-)-CH2)- (I) or (II). The oxirane monomeric unit (M2) is monomeric unit(s) chosen from arylglycidyl-ether unit, glycidyl-acrylate unit and glycidyl-methacrylate unit.A+=group having onium cation structure containing cationic nitrogen atom;X-=anion;andR1-R4=H or optionally substituted 1-10C hydrocarbyl, where R2 and R3 are mutually bonded.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The film thickness of the silica is 10-100 nm. Preferred Composition: The catalyst component contains metal or metal oxide chosen from platinum, palladium, rhodium, nickel, cobalt, copper, manganese, iron, aluminum, zirconium, lanthanum, cerium, magnesium, and calcium. The content of metal oxide is 1-0 %mass. The silica has methyl group.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: An organic compound is used as starting material for manufacturing catalyst.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The layer (a) contains oxide semiconductor material or its compound. The layer (b) contains silicon, carbon nanotube and/or graphene. The solar cell further has transparent electrode layer containing conductive (in)organic compound.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The material of The substrate contains perovskite-type single crystal oxide such as sapphire, mica mineral, quartz mineral, strontium titanate, silicon wafer, zinc oxide wafer and gallium nitride wafer. The silicate is muscovite, biotite, fluorophlogopite, talc, montmorillonite, vermiculite, chlorite and/or kaolinite. Preferred Properties: The thickness of the film is 10-1000 nm. The average particle diameter of silicate is 1-100 mu m. The laser fluence of the film is 1.75-3.5 J/cm2. Preferred Condition: The temperature of the substrate is room temperature to 1000 degrees C. The annealing temperature is 500-1000 degrees C. The pressure of atmosphere, during annealing film, is 1x 10-7 to 1x 10-2 Torr.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The primary alkyl contained in polyoxyethylene component is 4-20C alkyl. The repeating number of polyoxyethylene in the surfactant is 2-30. The amount of surfactant dissolving in multi-phase fluid is 0.01-10 %mass. Preferred Properties: The surfactant has hydrophilic-lipophilic balance of 11-16 and number average molecular weight of 200-3000.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The transparent conductive layer contains conductive polymer including polythiophene having polycation including repeating unit of formula (I), and polyanion, and oxide of zinc, indium and tin. The optical layer contains hollow particles. The transparent conductive layer has reflection prevention structure having average reflectance of 2% or less at wavelength of 280-780 nm. The base material is plastic film or glass.R1,R2=H or 1-4C alkyl;andor R1+R2=optionally substituted 1-12C alkylene.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The surfactant system comprises a bidentate diamine and 6-18C alkylamines.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Process: An electrolyte layer is placed in interval between underlying structure and the top structure, where the underlying structure includes lower plate and the bottom electrode layer. The top structure includes top electrode layer and porous layer formed on silicon layer, a dye contained in the porous layer is absorbed in top electrode layer. Bottom electrode layer containing conductive inorganic material formed by vacuum deposition method and is coated on the lower plate by inkjet method or screen printing method. The lower plate is heat treated in vacuum or inert gas atmosphere before forming the bottom electrode layer. The semiconductor layers are coated on bottom electrode layer by inkjet method or screen printing method. The electrolyte layer is formed by injecting electrolyte into the air gap between the underlying structure and the top structure.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The structure contains dye sensitized organic material compound. The lower plate comprises paper or organic compound and the bottom and top electrode layers comprise conductive organic compound and/or conductive inorganic material. The semiconductor layers comprise N-type semiconductor organic compound and/or cadmium sulfide and P-type semiconductor organic compound and/or copper indium gallium selenide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The (meth)acryloyl group of vinyl polymer (A) exists in the molecular chain terminal. The polymerization initiator is optical radical initiator, preferably 2,4,6-trimethylbenzoyl diphenylphosphine oxide or bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide. The content of polymerization initiator is 0.001-10 parts weight with respect to 100 parts weight of components (A) and (B).    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The vinyl polymer (A) is obtained by polymerizing principal chain with (meth)acrylate monomer. The vinyl polymer (B) is manufactured using mercaptan-type compound which has thiol group as chain-transfer agent, and has alkoxysilyl group of formula: -Si(OR2)n(R3)3-n. The content of vinyl polymer (B) is 5-60 wt.% with respect to 100 wt.% of components (A) and (B).R2,R3=1-4C alkyl;andn=1-3.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent is aromatic alcohol, aromatic hydrocarbon, heterocyclic compound and/or phenolic solvent. The aromatic alcohol is benzyl alcohol. The aromatic hydrocarbon is trimethylbenzene. The heterocyclic compound is pyridine. The phenolic solvent is m-cresol.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The content of polyimide is 5-50 %mass. A polyimide is isolated from a polymerization reaction material, and the organic solvent is further dissolved in isolated polyimide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Filler: The filler is aluminum oxide. The composition further contains 200-800 parts mass of heat conductive filler, preferably aluminum hydroxide having BET specific surface area of less than 1 m2/g.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The (meth)acrylic resin composition contains monomer having organic acid group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Filler: The heat conductive filler is chosen from aluminum oxide and aluminum hydroxide having average particle diameter of 50 mu m or less.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The mixed composition further contains phosphate ester (20-100 parts mass).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general method for the preparation of the compound (II) is given. Preferred Definitions:    R1=1-12C alkyl group.    SPECIFIC COMPOUNDS - 20 Compounds are disclosed as compound (II) e.g. 2,6-bis(5-(4-butylphenyl)thiophen-2-yl)pyrazine of formula (IIa), 2,6-bis-(5-phenyl-thiophen-2-yl)-pyrazine, 2,6-bis(5'-(4-octylphenyl)-2,2'-bithiophen-5-yl)pyrazine, 2,6-bis-(5-p-tolyl-thiophen-2-yl)-pyrazine, and 2,6-bis-(5-m-tolyl-thiophen-2-yl)-pyrazine.    EXAMPLE - A solution including 2,6-bis(5'-bromo-2'-thienyl)pyrazine (0.52 g), 4-n-butylbenzeneboronic acid (0.51 g), and tetrakis(triphenylphosphine)palladium(0) (0.017 g) in N-methylpyrrolidone (25 ml) was prepared, and a solution including sodium carbonate (0.80 g) in water (5 ml) was added to it. The resulting mixture was stirred at 80 degrees C for 6 hours. After allowed to cool, the mixture was poured into water (400 ml), and the resulting precipitate was separated by filtration and washed with water. The precipitate was dried under reduced pressure and then dissolved in toluene. The dissolved precipitate was purified by column chromatography (silica gel) and recrystallized from a toluene/methanol mixed solvent, so that 2,6-bis(5-(4-butylphenyl)thiophen-2-yl)pyrazine was obtained (0.45 g, yield 69%).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The alkali liquor is sodium hydroxide water solution, potassium hydroxide aqueous solution, sodium carbonate aqueous solution, potassium carbonate aqueous solution, sodium bicarbonate water solution or potassium carbonate aqueous solution.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The catalyst is organic palladium and organic phosphine ligand or mixture of organic palladium and organic phosphine ligand. The organic palladium is tris(dibenzylideneacetone)dipalladium, tetrakis(triphenylphosphine)palladium or Bis(triphenylphosphine)palladiumchloride. The organic phosphine ligand is tri(o-tolyl)phosphine. The organic solvent A is tetrahydrofuran, ethylene glycol dimethyl ether, benzene, chlorobenzene or toluene. The organic solvent B is acid, quinoline, imidazole, butanol or N-methyl--2-pyrrolidine. The organic solvent C is tetrahydrofuran, chloroform, methylene dichloride or N, N-dimethyl formamide. Preferred Process: The mol ratio of the catalyst to total substance is 0.05-50%. The mol ratio of organic palladium and organic phosphine ligand mixture is 1: 2-20. The method further involves reacting naphthalene tetracarboxylic acid dianhydride and alkylamine into organic solvent B, refluxing obtained mixture and cooling to room temperature for making reacting solution into alkali solution. The alkali solution is extracted by chloroform to obtain the N, N'-bis-substituted 2,6-dibromo-1,4,5,8-naphthalene tetracarboxylic acid imide. The mixed solution is reacted with organic solvent C at room temperature and removed the solvent to obtain the 2, 6-trimethyl tin-N-alkyl-thiofuran.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The photoelectric-converting layer is a photoelectric-converting layer used for amorphous-silicon solar cell, polycrystalline-silicon solar cell, or microcrystal silicon-type solar cell. The oxide transparent conductive film contains zinc oxide as main component. The atomic ratio of low-valence metal oxide to zinc is 0.02-0.1. The low valence metal oxide is chosen from low-valence titanium oxide, low-valence niobium oxide, low-valence tantalum oxide and low-valence molybdenum oxide. The low-valence titanium oxide is of formula: TiO2-x, (where x is 0.1-1), preferably titanium oxide of formula: TiO(II), Ti2O3(III), Ti3O5, Ti4O7, Ti6O11, Ti5O9 or Ti8O15. The low-valence niobium oxide is chosen from divalent niobium oxide (NbO(II)), trivalent niobium oxide (Nb2O3(III)) and tetravalent niobium oxide (NbO2(IV)). The low-valence tantalum oxide is chosen from tetravalent tantalum oxide (TaO2(IV)) and trivalent tantalum oxide (Ta2O3(III)). The low-valence molybdenum oxide is chosen from tetravalent molybdenum oxide (MoO2(IV)) and trivalent molybdenum (Mo2O3(III)). Preferred Properties: The specific resistance of an oxide transparent electrode layer is 2x 10-3 Omega .cm or less. The thin film photoelectric-conversion element has transmittance of 85% or more in wavelength of 780-1500 nm, and surface resistance of 20 Omega ./square or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent conductive oxide film comprises a material selected from doped zinc oxide (ZnO), indium tin oxide (ITO), indium oxide (In2O3), tin oxide (SnO2), and/or cadmium oxide (CdO). The buffer layer comprises a material selected from silicon oxynitride (SiON), aluminum, titanium, and/or zinc.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The passivation layer comprises silicon dioxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The paste composition comprises (in wt.%): silver (38-52) and lead-free bismuth-tellurium-oxide (1-3.5). The paste composition further comprises inorganic additive chosen from bismuth oxide, titanium dioxide, aluminum oxide, boron oxide, stannic oxide, antimony oxide, chromium oxide, iron oxide, zinc oxide, copper oxide, cuprous oxide, manganese dioxide, nickel oxide, ruthenium dioxide, metal which can generate listed metal oxide during firing and their mixture, and inorganic components of less than 70 wt.% comprising silver powder, bismuth-tellurium-oxygen powder, and any of the inorganic additives. Preferred Components: The bismuth-tellurium-oxide further comprises (in wt.%): lithium dioxide (0.1-7, preferably 0.9-5), titanium dioxide (0.1-4, preferably 0.3-2), boron oxide (0.1-8), zinc oxide (0.1 -3) and phosphorus pentoxide (0.3-2). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The bismuth-tellurium-oxide further comprises lithium oxide (0.1-7 (preferably 0.9-5) wt.%), titanium dioxide (0.1-4 (preferably 0.3-2) wt.%), boron oxide (0.1-8 (preferably 0.9-6) wt.%), zinc oxide (0.1-3 (preferably 0.1-2) wt.%), and phosphorus pentoxide (0.3-2 (preferably 0.3-1) wt.%). EXAMPLE - Typical composition comprised (in wt.%): bismuth oxide (26.64); titanium dioxide (67.22); lithium oxide (2.16); titanium dioxide (0.48); boron oxide (2.09); zinc oxide (0.98); and phosphorus pentoxide (0.43).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The alkali metal is sodium, potassium or lithium. The alkali metal silicate film contains boron or phosphorus. The content of alkali metal silicate is 5-30 %mass. Preferred Process: The composite structure layer is formed by inorganic metal oxide, preferably silicon oxide. Preferred Property: The thickness of inorganic metal oxide film and alkali metal silicate layer is 300 nm or less and 1 mu m or less, respectively.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The metal substrate is a clad material which is formed by incorporating one or both surfaces of aluminum, stainless steel or steel substrate by aluminum plate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The Ib group element contained in the first absorber layer and the second absorber layer is copper.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The thickness of thin metal film layer is 0.01-1 mu m. The arithmetic mean roughness (Ra) on the surface of the base sheet is 20 nm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The low valent metal oxide is low valent titanium oxide (TiO), low valent niobium oxide (NbO), low valent tantalum oxide (TaO), and low valent molybdenum oxide (MoO). The low valent TiO is TiO2x (x=0.1-1). The low valent TiO is TiO(II), Ti2O3(III), Ti3O5, Ti4O7, Ti6O11, Ti5O9, and Ti8O15. The low valent NbO is chosen from NbO(II), Nb2O3(III) and NbO2(IV). The low valent TaO is chosen from TaO2(IV) and Ta2O3(III). The low valent MoO is chosen from MoO2(IV) and Mo2O3(III).    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polyalkylene carbonate resin is polyoxyethylene carbonate resin or polypropylene carbonate resin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of fluorine in the group (R) of carbonate (I) is 10-76 %mass.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of cyclic carbonate (I) is 0.2-8 volume%. The electrolytic solution further contains linear carbonate (Ic). The volume ratio of cyclic carbonate (Ia), cyclic carbonate (Ib) and linear carbonate (Ic) is 0.5-8/10-92/0-89.5. The cyclic carbonate (Ib) is ethylene carbonate, propylene carbonate, fluoroethylene carbonate and/or vinylene carbonate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The back side of the substrate is etched using solution containing nitric acid-hyposulfurous acid-hydrogen peroxide to isolate the edge from the anti-reflective film. The damage from the surface of the substrate is removed using low-concentration solution containing potassium hydroxide or ammonium hydroxide-water-hydrogen peroxide, and cleaned using solution containing hydrochloride acid-hydrogen fluoride. Preferred Component: The substrate is doped with impurity chosen from elements of group III and elements of group V.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The crosslinking layer contains a crosslinked polymer containing acryloyl group. Preferred Properties: The dynamic friction coefficient based on JIS C2151 (2006) and static friction coefficient based on JIS C2151 (2006) between the crosslinking layer side and the protective layer side is 0.75 or less and 0.65 or less, respectively. The surface-resistance of the crosslinking layer side is 1x 1013 ohm/square or less. The thickness of the base material is 100 mu m or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The ratio of high conductive metal in the organic substance layer side of electrode layer (18) is 30% or less, and the ratio of high conductive metal in the organic substance layer and other side of electrode layer (18) is 70% or more. The high conductive metal is aluminum, silver, gold and/or copper. Electrode layer (18) is formed by vapor codeposition of aluminum and calcium, or silver and magnesium.
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The stainless steel sheet contains (in %mass) carbon (0.15 or less), silicon (0.1-2), chromium (10-32), niobium (0.01-0.8), titanium (0.01-0.5), and remainder of iron and unavoidable impurities, and further contains molybdenum (0.2-5), copper (0.1-3), manganese (less than 2), phosphorus (0.04 or less), sulfur (0.03 or less), nickel (less than 0.6), chromium (11-32), aluminum (0-0.12), titanium (0-1), nitrogen (0.025 or less) and/or boron (0-0.1).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The anode active particles are silicon nanoparticles. The content of silicon nanoparticles is 50 weight% or more. Preferred Property: The silicon nanoparticles have size of 1-100 nm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The polyelectrolyte further contains nonionic plasticizer and non-volatile ionic liquid. The nonionic plasticizer is dimethyl phthalate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polymer is polyalkylene oxide, preferably polyethylene oxide. The block copolymer is the self-assemblying block copolymer. The weight ratio of polyalkylene oxide with respect to silicon nanoparticles is 1:10-10:1. The block copolymer comprises amphiphilic block and hydrophobic block. The amphiphilic block is polystyrene. The hydrophobic block is polyethylene-oxide block. The polyelectrolyte contains polystyrene-block-polyethylene oxide copolymer and polyethylene oxide. Preferred Properties: The polyethylene oxide has weight average molecular weight of 200-20000. The glass transition temperature of the amphiphilic block is 20 degrees C more than that of the glass transition temperature of the hydrophobic block.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: In preparing porous film, the structure directing agent is selected from polar non-ionic amphiphiles, preferably phytantriol. The inverse lyotropic liquid crystalline phase is selected from Q229(QII raised to P), Q224 (QII raised to D), and Q230 (QII raised to G). Moreover, more than 95% of the first solvent is removed. The substrate is a conductor or semi-conductor. The material to be deposited is a metal or an oxide. The metal is present as a solution of ions in the second solvent. The metal is platinum, preferably in the form of hexachloroplatinic acid. The process further comprises: (v) providing a third composition comprising a third solvent and a precursor of a second material to be deposited; (vi) optionally, washing the layer; (vii) contacting the layer with the third composition; and (viii) electrochemically depositing the second material onto the first material. The process as well comprises washing the porous film to remove structure-directing agent.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The compound having 3-6 hydroxy groups is glycerol, trimethylol propane, pentaerythritol and/or sorbitol.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The adduct (A) has number average molecular weight of 400-10000 and hydrophilic-lipophilic balance of 10-18.5. Preferred Composition: The amount of adduct (A) is 0.1-40 wt.%. The hydrous cutting fluid further contains monovalent or bivalent linear or branched aliphatic carboxylic acid (B) having carbonyl group, and nonionic surfactant (C) having hydrophilic-lipophilic balance of 6-8.5. Preferred Definitions:    (A1O)m=-(A2O)n/(A3O)k-;    A2O=oxyalkylene;    A3O=oxypropylene;    n=m;    k=1-100;and    n/(n+k)=0.1-0.9.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Ion-implantation is carried out using hydrogen, nitrogen, oxygen, argon, helium, neon, xenon and/or krypton. The organosilicon compound thin film has a thickness of 30-500 nm. The laminate has a water-vapor permeation rate of 1 g/m2/day or less at 40 degrees C and 90% relative humidity.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The curable silicone resin composition further contains unsaturated compound having (meth)acryloyl group. The content of radical polymerization initiator is 0.01-10 %mass. The ratio of all-vinyl group number with respect to total number of (meth)acryloyl groups in polyhedral silsesquioxane resin is 1:4-13:1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The lead-free glass frits contain 11-33 wt.% of silicon dioxide, 0-7 wt.% of aluminum oxide, 2-10 wt.% of barium oxide and 40-73 wt.% of bismuth oxide. The lead-containing glass frits contain 53-57 wt.% of lead oxide, 25-29 wt.% of silicon dioxide, 2-6 wt.% of aluminum oxide and 6-9 wt.% of barium oxide.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The aluminosilicate glass preferably glass transition temperature of 500-570 degrees C, thermal expansion coefficient of 6-10x 10-6 K-1 and hardness of more than 550 Kgf/mm or more, after tempered in mixed salt of molten potassium nitrate and sodium nitrate. The glass ceramics have hardness of more than 800 Kgf/mm2 after tempering process. Preferred layers: A potassium ion surface compressive layer having surface compressive stress of 850 Mpa or more, is formed in aluminosilicate glass, after tempering with potassium nitrate. A sodium ion surface compressive layer having depth of 150 mu m or more, is formed in aluminosilicate glass, after tempering with sodium nitrate. A potassium ion and sodium ion compressive layer having surface compressive stress of 1000 Mpa or more, is formed in aluminosilicate glass after tempered in mixed salts of molten potassium nitrate and sodium nitrate. Preferred Composition: The aluminosilicate glass or glass ceramics does not contain arsenic oxide or antimony oxide. The aluminosilicate glass further contains (in weight%) refining agent(s) chosen from at least one of cerium oxide (0.01 to more than 0.2), fluorine (0-0.5) and tin oxide (0.01-0.5). The glass is thin glass. The glass ceramics are thin glass ceramics having thickness of less than 0.5 mm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The secondary electrode contains inorganic sodium compound of formula: NaxMO2 (I), where M is iron, nickel, cobalt, manganese, chromium, vanadium, titanium, boron, aluminum, magnesium and/or silicon, and x is more than 0 to 1.2.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The electrolyte is non-aqueous electrolyte which is capable of dissolving in an organic solvent. The organic solvent is 4-fluoro-1,3-dioxolan-2-one.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The sodium rechargeable battery electrode further contains an electrode formation agent chosen from at least one of polyvinylidene fluoride, polyacrylic acid, sodium polyacrylate, and carboxymethylcellulose, and carbon material.
TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The precursor is heated or imidated by cyclization reaction using a dehydrating agent. The polymerization is performed at 180-220 degrees C in a solvent. EXAMPLE - Trimellitic anhydride chloride (in g) (22) and acetonitrile (63) were added to reaction container, dissolved and cooled. 9H-fluorene-9,9-dimethanol (10) was dissolved in liquid consisting of acetonitrile (30) and pyridine (10) and reacted. Solid product was filtered and washed with liquid mixture of acetic acid (35) and acetonitrile (15), and dried at 100 degrees C for 1 hour under reduced pressure. The product was recrystallized after adding obtained white solid (23) to mixture of acetic acid (85), acetic anhydride (6) and dimethyl formamide (110) and heat-dissolving at 120 degrees C. The precipitated crystal was filtered, washed with liquid mixture of acetic acid (35) and acetic anhydride (15) and dried at 130 degrees C for 2 hours. (9H-fluorene-9,9-diyl)bis(methylene)bis(1,3-dioxo-1,3-dihydroisobenzofuran-5-carboxylate) (15) was obtained at yield of 97.1%.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The surfactant is alkylphenol type surfactant and/or ethylene oxide-propylene oxide-ethylene oxide type block copolymer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The semiconductor material is selected from a group consisting of aluminum antimonide, aluminum arsenide, aluminum nitride, aluminum phosphide, gallium arsenide, gallium phosphide, indium antimonide, indium arsenic, indium nitride, indium phosphide, aluminum gallium arsenide, indium gallium phosphide and aluminum indium arsenic.    TECHNOLOGY FOCUS - METALLURGY - The germanium containing material is selected from a group consisting of gallium and aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The glass frit comprises: a lead-containing glass frit comprising of oxides consisting of lead oxide, silicon oxide, boron oxide and aluminum oxide; or a lead-free glass frit comprising oxides group consisting of boron oxide, zinc oxide, bismuth oxide, silicon oxide, aluminum oxide and barium oxide. The material of the first passivation layer is silicon nitride (SiNx), silicon carbide (SiCx), titanium oxide, aluminum oxide, silicon oxide (SiOx), and/or indium tin oxide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The molecules have an electron acceptor group (B1) and 1-6 electron acceptor groups (A1) covalently bound to a (B1) group, where each of the (A1) groups individually includes hydrocarbyl compounds of formula (X1Y1Z1). The molecules have: two distinct instances of the (A1) group bound to an instance of the (B1) group to form an (A2-B1-A2) structure; or two identical instances of the (A1) group bound to an instance of the (B1) group to form an (A2-B1-A2) structure. The electron acceptor groups (A1) comprise a vinylimide moiety. The electron acceptor group (b1) comprises a benzothiadiazole moiety. The (A1) groups are covalently bonded to the group (B1) via Z1 in the (A1) groups. The molecules provide electron transport, and are substantially planar. The organic photovoltaic cell is a two-layer cell including a layer of the electron acceptor (108) material and a layer of an electron donor (106) material sandwiched between two electrodes (102, 104). The organic photovoltaic cell is a bulk heterojunction cell including a mixture of the electron acceptor material and an electron donor material sandwiched between two electrodes.X1 = (-C(=W1)-N(R1)-C(=W1)-);W1 = O or S;R1 = heteroalkyl (optionally substituted by F) or optionally branched or cyclic 1-20C alkyl;Y1 = at least one aromatic ring;A2, A3 = distinct instances of (A1) group; andZ1 = doubly bonded hydrocarbyl having (-C=C-) or triply bonded (-CC-), where X1 and Y1 are connected by two single covalent bonds, and Y1 and Z1 are connected by a single covalent bond.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The silicon powder is contained in the silicon sludge which generated in silicon manufacturing process.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The passivation film is formed from aluminum oxide, aluminum nitride or aluminum oxynitride. The wet-chemical oxidization is performed using an etching solution such as hydrogen chloride, hydrogen peroxide, nitric acid and sulfuric acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the step (i), cleaning is carried out at 70-90 degrees C for 5-20 minute. In the step (ii), reaction is carried out at 70-85 degrees C for 20-60 minutes. Preferred Components: In the step (i), the alkalescent cleaning solution is sodium citrate or aqueous ammonia. In the step (ii), the mass concentration of the potassium hydroxide is 3%, the volume concentration of the alcohol is 3-8%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The metal particles are flat-shaped particles having aspect ratio of 1 or more. Preferred Composition: The metal particles contain silver.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The surface of the substrate is deposited with a silicon nitride layer.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The electron-donating material is polythiophene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The gas-barrier film has a regular transmittance of 70% or more with respect to light in visible region. The total thickness of buffer layer is 10-4000 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compounds: The metal or metallic compound in the semiconductor fine particles is metal atom, metal chalcogenide, metal carboxylate, or metal nitrate. The metal atom is titanium, tin, gold, silver, copper, aluminum, zirconium, niobium, vanadium and/or tantalum. The metal chalcogenide is cadmium sulfide or cadmium selenide. The metal oxide is of titanium, tin, zinc, magnesium, aluminum, tungsten, zirconium, hafnium, strontium, indium, cerium, yttrium, lanthanum, vanadium and/or tantalum. The metal carboxylate is calcium carbonate, potassium carbonate, and/or barium carbonate. The metal nitrate is lanthanum nitrate. The semiconductor fine particles have a core-shell structure, with metal chalcogenide as core, and chalcogenide or metal carboxylate as shell. The semiconductor fine particles have metal chalcogenide chosen from titanium oxide and tin oxide as core, and metal chalcogenide or metal carboxylate chosen from aluminum oxide, magnesium oxide, calcium carbonate, titanium oxide, and titanium oxide/magnesium oxide as shell. Two or more types of metal atoms are contained when the semiconductor fine particles are doped with a metal atom. The semiconductor fine particles contain metal atom doped with the metal chalcogenide. The dopant is niobium, vanadium and/or tantalum. The particle size of semiconductor fine particles is 1-1000 nm. The semiconductor fine particles contain an additive consisting of an electroconductive material, preferably graphene. Preferred Definitions:    Mz=Ru;    m1,m2=1;    X=isothiocyanato;    m3=2;    L1,L2=ethenylenyl;and    R105,R106=substituted aniline or substituted thiophenyl.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Process: The glass composition is baked, and crystal phase of silicon dioxide-zinc oxide-type and magnesium oxide-boron trioxide-type are precipitated to obtain glass ceramics. Preferred Properties: The difference (( alpha )2-( alpha )1) between the thermal expansion coefficient (( alpha )1) of glass ceramic at 30-500 degrees C and thermal expansion coefficient (( alpha )2) of glass ceramic at 30-600 degrees C, is 0-9x 10-7/ degrees C. The difference between the glass softening point (Ts) and crystallization peak temperature (Tx) of glass composition is 130 degrees C or more. The glass ceramic has thermal expansion coefficient of 60-70x 10-7/ degrees C at 30-550 degrees C. Preferred Composition: The sealing material further contains ceramic powder. The content of ceramic powder is 0-5 %mass or less, with respect to the total content of glass powder.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The fluorene derivative (I) is preferably of formulae (II)-(V). SPECIFIC COMPOUNDS - 186 Fluorene derivatives e.g. N-(9-methylidene-9H-fluoren-2-yl)-9-(naphthalen-1-yl)-N-phenyl-9H-carbazol-3-amine of formula (Ia), N-(9-(diphenylmethylidene)-9H-fluoren-2-yl)-9-(naphthalen-1-yl)-N-phenyl-9H-carbazol-3-amine, N-(9-(9H-fluoren-9-ylidene)-9H-fluoren-2-yl)-9-(naphthalen-1-yl)-N-phenyl-9H-carbazol-3-amine, N-(9-methylidene-9H-fluoren-2-yl)-N,9-bis(naphthalen-1-yl)-9H-carbazol-3-amine and N-(9-(diphenylmethylidene)-9H-fluoren-2-yl)-N,9-bis(naphthalen-1-yl)-9H-carbazol-3-amine.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): Preparation of (I) comprises: chlorinating or brominating tetraazaperopyrene compound of formula (II) using a chlorination or bromination agent. Preferred Process: (II) is obtained by reacting 4,9-diaminoperylenquinone-3,10-diimine (III) with a carboxylic acid chloride compound of formula (R9-C(=O)-Cl) (IV). Preferred Components: The chlorination agent is N,N'-dichloroisocyanuric acid and the bromination agent is N,N'-dibromoisocyanuric acid. Preferred Definitions:    R5-R8 = H;    R1-R4 = Cl or Br; and    R9, R10 = phenyl group (substituted with 1-5 F).    SPECIFIC COMPOUNDS - 13 Compounds (I) are disclosed e.g. 4,7,11,14-tetrachloro-1,3,8,10-tetraazaperopyrene of formula (Ia), 2,9-disubstituted tetraazaperopyrenes, 2,9-bis-(trifluoromethyl)-4,7,11,14-tetrachloro-1,3,8,10-tetraazaperopyrene, 2,9-bis-(pentafluoroethyl)-4,7,11,14-tetrachloro-1,3,8,10-tetraazaperopyrene, and 2,9-bis-(heptafluoropropyl)-4,7,11,14-tetrachloro-1,3,8,10-tetraazaperopyrene.    EXAMPLE - Tetraazaperopyrene (100 mg) in concentrated sulfuric acid (10 ml) was added to dichloroisocyanuric acid (360 mg). The reaction mixture was stirred for 7 days at 100 degrees C. Then, the reaction mixture was cooled to room temperature, poured on ice and neutralized with aqueous sodium hydroxide. The precipitate was filtered, washed with water and repeatedly extracted with dichloromethane until the solution was colorless. The solvent was removed in vacuo, the residue re-crystallized from tetrahydrofuran, washed with pentane, and worked up to obtain 4,7,11,14-tetrachloro-1,3,8,10-tetraazaperopyrene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The lanthanide is selected from erbium or ytterbium. The erbium or ytterbium is also selected from erbium nitrate, ytterbium nitrate, ytterbium triflate or erbium triflate. An alkaline methylate is also used in the preparation of ternary lanthanide complexes (I). The alkaline methylate is selected from alkali or alkaline hydroxide, preferably potassium hydroxide or cesium hydroxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): Ternary lanthanide complexes (I) is prepared by mixing and stirring lanthanide, diketone and Lewis base ligand in a solution. Preferred Components: The beta -diketonate is fluorinated. The (N,N-donor) is selected from 5-nitro-1,10-phenanthroline, bathophenanthroline or 2,2-bipyridine. The solvent is selected from alcohol or acetonitrile. The alcohol is selected from methanol or ethanol. The alkaline methylate is selected from sodium methylate or potassium methylate. SPECIFIC COMPOUNDS - 20 Ternary lanthanide complexes (I) are specifically claimed, e.g. tris(acetylacetonate)mono(bathophenanthroline)erbium(III) of formula (II), tris(2,4-hexanedione)mono(bathophenanthroline)erbium(III), tris(2,2,6,6-tetramethyl-3,5-heptanedione)mono(bathophenanthroline)erbium(III), tris(2,6-dimethyl-3,5-heptanedione)mono(bathophenanthroline)erbium(III) and tris(2,6-dimethyl-3,5-heptanedione)mono(5-nitro-1,10-phenanthroline)erbium(III).    EXAMPLE - The example illustrates preparation of ternary lanthanide complexes. 0.451 g of Erbium nitrate or ytterbium nitrate and 3 mmol of beta -diketone were mixed in 20 mL of methanol and 0.841 g of potassium methylate solution to obtain a mixture. 2,2'-Bipyridine, bathophenanthroline and 1,10-phenanthroline were added into the obtained mixture. This mixture was stirred at reflux for 5 hours to obtain pink-yellow microcrystals of the desired product.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Salt: The halogen-containing inorganic salt is chosen from analytically pure zinc chloride, sodium chloride, potassium chloride, ferric chloride, sodium bromide, potassium bromide, copper bromide, potassium iodide and sodium iodide. The copper-containing inorganic salt is chosen from analytically pure copper chloride, copper nitrate, copper sulfate and copper acetate. The concentration of surfactant is 0.02-4 mol/l. The concentration of halogen ion-containing inorganic salt is 0.005-0.5 mmol/l. The concentration of copper-containing inorganic salt is 0.005-0.5 mmol/l. The inorganic silver salt precursor is chosen from anhydrous silver nitrate, silver trifluoromethanesulfonate and silver acetate. The concentration of silver salt precursor is 0.02-4 mol/l. The inorganic platinum salt precursor is chosen from chloroplatinic acid, potassium chloroplatinate, platinum nitrate and platinum chloride. The concentration of platinum salt precursor is 0.008-2 mol/l. The amount of concentrated nitric acid is 5-50 ml. The concentration of concentrated nitric acid is 65 %mass. The annealing is performed at 100-400 degrees C for 20-500 minutes.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polyhydric alcohol is chosen from analytically pure ethylene glycol, neopentyl glycol, sorbitol, glycerol and pentaerythritol. The surfactant is chosen from polyvinyl pyrrolidone, cetyl pyridinium chloride, cetyl trimethyl ammonium chloride, poly diallyl dimethyl ammonium chloride and cetyl trimethyl ammonium bromide. The concentration of polyvinylpyrrolidone solution is 0.005-0.5 mol/l.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The laser ablation layer is made of gallium nitride, indium tin oxide, gallium oxide and gallium oxynitride. The flexible printed circuit board is made of metals selected from the group consisting of iron, silver, gold, copper, chromium, tungsten, aluminum, molybdenum, zinc, nickel, platinum, palladium, cobalt, indium, manganese, silicon, tantalum, titanium, tin, lead, vanadium, ruthenium, iridium, zirconium, rhodium, magnesium, and stainless steel.    TECHNOLOGY FOCUS - POLYMERS - One polymeric compound is selected from the group consisting of copolymer, polyamine or polyamine including copolymer, polysulfite or (polysulfate) or polysulfite including copolymer, polystyrene or polystyrene including copolymer, polyacrylic acid or polyacrylic acid including copolymer, polyimide or polyvinyl alcohol (PVA), polyallylamine, polyacrylic acid, and the planarization layer is comprised of polyester.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The mother board comprises iron alloy having nickel, molybdenum and/or chromium, titanium or titanium alloy, and element chosen from copper, nickel, aluminum, molybdenum and chromium. The bonding layer contains molybdenum, nickel, chromium, titanium and iron. The protective layer contains oxide of gold, platinum, iridium, palladium, osmium, rhodium and ruthenium, and oxide or nitride of molybdenum, nickel, chromium, titanium, iron, aluminum, boron and carbon. The flexible printed circuit board is made of metal chosen from iron, silver, gold, copper, chromium, tungsten, aluminum, molybdenum, zinc, nickel platinum, palladium, cobalt, indium, manganese, silicon, tantalum, titanium, tin, lead, vanadium, ruthenium, iridium, zirconium, rhodium, magnesium and stainless steel.    TECHNOLOGY FOCUS - POLYMERS - The reinforcing substrate comprises at least one polymeric compound chosen from polyamine, polysulfite, polystyrene, polyimide, polyvinylalcohol, polyallylamine and polyacrylic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The titanium source of the titanium dioxide is anatase, rutile and brookite.
TECHNOLOGY FOCUS - POLYMERS - The outer package is covered with thermoplastic resin mold. The binder is chosen from PTFE and aramid resin e.g. poly-meta-phenylene isophthalamide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The transparent conducting material used in the manufacturing process is provided with metal source, oxygen supply source and surface roughness source. The metal source is selected from dimethylzinc, diethylzinc or zinc acetyl-acetonate. The oxygen supply source is selected from oxygen, water, carbon-dioxide or nitrous oxide. The oxygen supply source is selected from tetrahydrofuran or alcohol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The corroded light absorption layer is formed by corroding surface of the light absorption layer using chemical solution selected from the nitric acid-phosphoric acid solution, bromine methanol solution, and potassium dichromate sulfuric acid solution. The back contact transition layer is made of zinc telluride.    TECHNOLOGY FOCUS - METALLURGY - The positive layer and negative layer is selected from the molybdenum, nickel, copper, and silver.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The amorphous semiconductor layer is made of silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electrolyte is water (28) or water-based. The electrolyte contains electron acceptor. The electron acceptor is carbon dioxide. The photocathode is made of nickel oxide, tungsten oxide and/or ferric oxide. The photoelectrochemical cell further contains a secondary electrode. The secondary electrode is provided with a catalyst to promote oxidation of water. The catalyst is manganese complex. The secondary electrode is n-type sensitized photo anode containing n-type sensitizer. Preferred Properties: The photocathode is provided with catalyst, which promotes reduction of water and formation of hydrogen, when illuminated by light (26). The photocathode and secondary electrode are separated by membrane in which proton diffusion is faster than diffusion of hydrogen and oxygen.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The sensitizer of photocathode is dye, an organic dye, a donor-acceptor dye, metal complex, semiconductor nano particles or quantum dot. The sensitizer of photoanode is dye, an organic dye, metal complex, semiconductor nano particles or a quantum dot.
TECHNOLOGY FOCUS - METALLURGY - The p-type semiconductive graphene is doped with boron or aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The compound of the second passivation layer is silicon carbon nitride compound (SixCyNz), where x, y and z are greater than 1. The second passivation layer is made of silicon carbide and/or diamond-like carbon. The first passivation layer is made of aluminum oxide and/or aluminum nitride.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic nanotube is N-glycoside type glycolipid of formula: G-NHCO-R1.G=sugar residue obtained by removing hemiacetal hydroxy group bonded with anomeric carbon atom of sugar;andR1=10-24C unsaturated hydrocarbyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Conditions: Polymerization is carried out below the gel-liquid crystal phase transition temperature of organic nanotubes.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The nanowires comprise a first nanowire group (210) having an average diameter of 100-300 nm and a second nanowire group (220) having an average diameter of 400-700 nm. The first nanowire group has 1-15 vol.% of the whole nanowire ink solution, and the second nanowire group has 0.1-5 vol.% of the whole nanowire ink solution. The nanowire ink solution comprises: a first nanowire group; and a second nanowire group having an average diameter greater than an average diameter of the first nanowire group and a volume.% less than a volume.% of the first nanowire group. The substrate has a groove (110) having a width gradually decreasing downward, and the first and second nanowire groups are disposed within the groove. The second nanowire group is disposed on an edge of the groove, and the first nanowire group is disposed on the second nanowire group. The substrate comprises a flexible substrate, a transparent substrate, or a glass substrate. The nanowire ink solution comprises nanowires having at least two sizes. The nanoparticle ink solution comprises nano materials having at least two normal distributions in a diameter. Preferred Method: The step of preparing nanowires having at least two normal distributions in a diameter involves: preparing a first nanowire group having an average diameter of 100-300 nm at about 1-15 vol.% of the whole nanowire ink solution; and preparing a second nanowire group having an average diameter of 400-700 nm at 0.1-5 vol.% of the whole nanowire ink solution. EXAMPLE - No suitable example is given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The substrate is a silicon carbide (SiC) wafer; or graphitized catalyst metal. The gas is hydrogen gas. The adhesive support is a thermal release tape. The insulating substrate is a silicon oxide film.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred structure: In (A1), the three-dimensional shape includes (or the pattern is a repetition of) at least one of a convex part and a concave part shaped in the form of one selected from hemisphere, cylinder, and a bowl; and the three-dimensional shape or the pattern is hollow. The three-dimensional shape has a size and a pitch of 0.1-100 mu m; and a height or a depth of 10 nm to 10 mu m. The graphene is single-layered or multi-layered (preferably epitaxial graphene). In (A2), the first set of the carbon atoms collectively form a non-protruding portion, the second set of the carbon atoms collectively form a protruding portion, and the first plane and the second plane are different. The three-dimensional graphene structure (A2) further comprises several protruding portions, where the non-protruding portion and the protruding portions are collectively arranged in a repeating three-dimensional pattern. Preferred Method: In the method (M1), the pattern is obtained by photolithography. The growing of the graphene involves performing a heat treatment at 1000-2000 degrees C in an inert atmosphere for one minute to one hour. The pattern is formed on a graphitized catalyst metal on the substrate. The method (M1) further involves supplying a separate carbon source when growing the graphene. In the method (M2), injecting the gas is performed at 600-1200 degrees C for 1-60 minutes, and the pressure of the gas is 500-800 torr. The adhesion of the adhesive support to the three-dimensional graphene structure is adjusted by heat. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: QDs are indium arsenide (InAs), gallium arsenide (GaAs), germanium (Ge), silicon germanium (SiGe), cadmium sulfide (CdS), indium phosphide (InP), lead selenide (PbSe), and/or gallium nitride (GaN). Doped semiconductor material in each spacer layer and semiconductor material of each QD layer are GaAs, InP, Si, barium fluoride (BaF2), or silicon carbide (SiC).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Particles: The inorganic oxide particles are hollow silica particles. The amount of inorganic oxide particles with respect to total amount of composite is 30-85 %mass.    TECHNOLOGY FOCUS - POLYMERS - Preferred Film: The antireflection film has minimum reflectance of 0.2%, total light transmittance of 86-100%, and haze of 0-3%. The low refractive index layer has water contact angle of 65 degrees or more, oil contact angle of 10 degrees or more, refractive index of 1.05-1.4, and pencil hardness of more than HB. The support is polyethylene terephthalate film, triacetyl cellulose film or polycarbonate film. The amount of polymer coupled with inorganic oxide particles in organic-inorganic composite is 95 %mass or more. The copper content of composite is 0.2 %mass or less with respect to total amount of composite. The fluorine content of composite is 0.1-60 %mass with respect to total amount of composite. The composite is obtained by living radical polymerization. The antireflection film has a hard coat layer (4) on the support, high refractive index layer (2) on the support or hard coat layer, and intermediate refractive index layer (3) on the support or hard coat layer. The low refractive index layer is provided on the hard coat layer. The low refractive index layer is formed by coating a coating material containing the composite. Preferred Monomer: The polymerizable monomer is chosen from styrene, acrylic ester and methacrylic ester. The polymer is thermoplastic polymer and has dispersion degree of 1-1.9.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The thin film comprises silicon. The dielectric material board comprises aluminum nitride or silicon nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The atomic ratio of titanium is 2-10% with respect to the total number of metal atoms. The titanium source is a low valence titanium oxide of formula TiO2-x including titanium oxide (TiO) or titanium oxide (Ti2O3). The acid solution comprises hydrochloric acid, sulfuric acid, nitric acid, and/or hydrofluoric acid. The alkaline solution comprises sodium hydroxide, ammonia, potassium hydroxide, and/or calcium hydroxide.x=0.1-1.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The semiconductor element comprises an amorphous silicon or p-type semiconductor layer of an amorphous silicon alloy, an i-type semiconductor layer, and a n-type-semiconductor layer.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The acid solution comprises acetic acid and/or formic acid.
TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The metal powder comprises metallic element particles having particle size of less than or equal to 10 mu m. It comprises silver, copper, or aluminum. The absorption layer comprises compound semiconductor containing group IB element, group IIIB element, and group VIB element. It consists of copper-indium-selenium semiconductor.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The compound semiconductor is copper-indium-selenium type semiconductor having chalcopyrite structure. IB Group element is copper or silver.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The compound semiconductor film is film containing chalcopyrite type-compound of formula: LMX2, L1M1(X1)2 or L2M2(X2)2, where L is group IB element, M is group IIIB element, X is group VIB element, L1 is copper, silver or gold, M1 is aluminum, gallium or indium, X1 is sulfur, selenium or tellurium, L2 is copper, M2 is gallium and/or indium and X2 is selenium, preferably copper-indium-gallium selenide (Cu(In,Ga)Se2) film, or film containing cadmium, zinc, lead, silver, antimony and/or bismuth and sulfur, selenium and/or tellurium, or film containing zinc, gallium, indium and/or cadmium and phosphorus and/or arsenic. The metal element and/or metal compound comprise copper halide, halogenated indium, gallium halide and/or selenium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The amine solvent is 1-5C amine.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The charge-generating layer contains a complex or fullerene or its derivative. The complex is a phthalocyanine complex or naphthalocyanine complex.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent conductive layer is made of zinc oxide (ZnO), aluminum (Al), indium oxide (In2O3), tin (Sn), tin oxide (SnO2), antimony (Sb) or indium oxide zinc (In2O3 Zn).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The ZnS and ZnSxO1-x thin film are prepared through radio frequency sputtering at air pressure of 0.15-2 Pa, and 100-250 W for 0.5-2 hours, where ZnS thin film thickness is 20-40 nm, ZnSxO1-x thin film thickness is 80-120 nm. The ZnSxO1-x and ZnS film are subjected to post-heat treatment at 350-450 degrees C, the time is.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The total content of tin, zinc and aluminum in the solder alloy is more than 8 %mass.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The flux contains rosin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The thickness of the primer layer is 0.005-1 mu m. The thickness of the gas-barrier layer (3) and gas-barrier layer (5) is 0.005-2 mu m. The thickness of gas-barrier film (4) and gas-barrier film (6) is 0.05-3 mu m.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The silicon oxide (II) is 1,3,5-tris(3-trialkoxy silyl alkyl)isocyanurate trimer of formula: (NCO-R4Si(OR3)3)3, 1,3,5-tris(3-trimethoxy silylpropyl)isocyanurate.R4=(CH2)n;andn=1 or more. Preferred Definitions:    R1=C2H5.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameters: Specific resistance of surface layer is less than or equal to 1x 106 Omega cm. Specific surface area of electrode part is 1-10000 cm2/g of surface layers. Surface layer contains greater than or equal to 1 at.% nitrogen. Base material is porous body which has communicating hole of 50 mu m-3 mm of air hole diameter, and surface layer is formed in inner surface of communicating hole. Alkali concentration of aqueous alkali solution is 0.1-10 M, and acid concentration of aqueous acids is less than or equal to 0.5 M. Preferred Conditions: Heating temperature during spin-drying process is 400-1000 degrees C. Output in plasma processing is 10-1000 W. Preferred Processes: Spin-drying process serves as electroconductive process by performing heating in spin-drying process in atmosphere of nitrogen gas. Process in electroconductive process is plasma processing.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The nickel film is formed by ion-plating method or spraying process.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The volume of hydrogen is 1-5% (preferably 2-4%) with respect to total volume of the mixed gas. The raw material contains magnesium oxide (6-20 %mass), aluminum oxide (1.5-2.5 %mass), silicon dioxide (0.8-1.2 %mass) and zinc oxide (remainder). Preferred Properties: The conductive film has thickness of 280-395 nm and transmittance of 80-86%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The substrate is glass, conductive glass or metal foil. The pH of cation solution is 3-5. The pH of anion solution is 12-14. The pH of chemical bath is 5-14. The copper salt is chosen from copper chloride, copper sulfate or copper acetate. The tin salt is stannous chloride or stannous sulfide. The zinc salt is chosen from zinc chloride, zinc sulfate, zinc nitrate or zinc acetate. The complexing agent is chosen from aqueous ammonia, triethanolamine, ethylene diamine tetraacetic acid, sodium citrate or ammonium citrate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The sulfur-containing compound is thioacetamide, sodium thiosulfate or thiourea. The sulfur source is hydrogen sulfide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The rare earth oxide is selected from elements having atomic number of 57-71 lanthanide scandium and yttrium oxide. The noble metal is platinum, palladium, gold, iridium, ruthenium, rhodium, silver or osmium. The carbon carrier is carbon nanotube, activated carbon, carbon fiber, graphite or carbon gel. The rare earth oxide is salt of nitrate, sulfate or hydrochloride of rare.
TECHNOLOGY FOCUS - POLYMERS - The macromolecule template agent is PVP having molecular weight of 1300000.
TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The method of producing polypyrrole nanoparticles of controllable size comprises: (a) dissolving the pyrrole monomer and 2, 4-diamidodiphenylamine in the first solvent to form pyrrole monomer and initiator blended solution; (b) dissolving the oxidant in the second solvent to form oxidant solution; (c) cooling the blended solution obtained by the pyrrole monomer and initiator and the oxidant solution obtained in step (b) to 0 degrees C respectively, mixing quickly, vigorously shaking the mixed solution for 10 seconds, allowing to stand for 24 hours and obtaining reaction solution after reacting completely; (d) collecting the reaction solution obtained in step (c) carrying out centrifugation at 4500 revolutions per minute for 30 minutes, obtaining solid product; (e) washing the obtained solid product using the mixed solution containing 3 times of water and methanol at a volume ratio of 9:1; (f) repeating centrifugal sedimentation and washing step for 3-5 times to remove supernatant; and (g) drying under a controlled vacuum degree of 0.02-0.09 MPa at 50 degrees C. Preferred Components: The diameter of polypyrrole nanometer particle is 80-600nm and the electric conductivity is 10-2-10-7S/cm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method further involves providing at least one compound comprising the second metal ion and at least one nitrate moiety, where the compound comprises thorium (IV) nitrate tetrahydrate. The reduction occurs in the presence of at least one protecting agent or at least one polyol. Preferred Components: The first reducible metal ion comprises at least one coinage metal ion or at least one ion of an IUPAC Group 11 element or at least one silver ion. The second metal ion comprises at least one thorium ion, preferably in its +4 oxidation state. The first metal nanowire comprises an average diameter of 10-500 (preferably 40) nm; and an aspect ratio of 50-10000. EXAMPLE - A 500 ml reaction flask containing ethylene glycol (280 ml), thorium (IV) nitrate tetrahydrate (17.8 mg), and 27 mM sodium chloride (5.3 g) in ethylene glycol was degassed overnight at room temperature using nitrogen that was introduced below the liquid surface through a TEFLON (RTM: fluoropolymer) tube. The tube was then retracted from the liquid to provide nitrogen blanketing of the reaction flask headspace at approximately 0.5 l/minute, after which the flask was then heated to 145 degrees C. Stock solutions of 0.50 M AgNO3 in ethylene glycol and 0.84 M polyvinylpyrrolidinone (PVP, 55000 weight-average molecular weight) in ethylene glycol were also degassed with nitrogen, then 20 ml syringes of each were prepared. The AgNO3 and PVP solutions were then added at a constant rate over 25 minutes via a 12 gauge a TEFLON (RTM: fluoropolymer) syringe needle. The flask was then held at temperature for 120 minutes, after which it was allowed to cool down to ambient temperature. The obtained silver nanowire product had an average nanowire length of 28.2 plus minus 10.4 mu m and an average nanowire diameter of 56.1 plus minus 13.7 nm, based upon measurement of at least 100 wires.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The wavelength conversion layer contains nano particle that is made of zinc selenide, cadmium selenide, cadmium sulfide, cadmium zinc selenide and zinc sulfide.    TECHNOLOGY FOCUS - METALLURGY - The nano particle contains luminescence element that is made of manganese, europium, ytterbium, terbium, antimony, silver, copper, gold and aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The fourth layer is made of a composition consisting of Group IV elements, hydrogen, silicon carbide, amorphous silicon, nano-crystalline silicon, metallic nitrides and/or metallic carbides. The fifth layer is made of a composition consisting of Group IV elements, hydrogen, silicon carbide, amorphous silicon, nano-crystalline silicon, metallic nitrides and/or metallic carbides. The substrate is graphite, graphite foil, glassy graphite, impregnated graphite, pyrolytic carbon, pyrolytic carbon coated graphite, flexible foil coated with graphite, graphite powder, carbon paper, carbon cloth, carbon, glass, alumina, carbon nanotube coated substrates, carbide coated substrates, graphene coated substrates, silicon-carbon composite, and/or silicon carbide. A composition of the first conductive layer is silicon, silicon carbide, conductive metal nitride, aluminum, copper, silver, and/or transparent metal alloy and transparent conductive metal oxide. The composition layers comprise silicon, silica, aluminum oxide, tantalum nitride, titania, silicon carbides, silicon nitrides, metal oxides, metal carbides, metal nitrides and conductive ceramics.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor layer comprises gallium arsenide, cadmium telluride or silicon carbide, or silicon single crystal.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The metal layer (m1) or metal layer (m2) comprises element chosen from aluminum, silver, gold, copper, platinum, nickel, cobalt, chromium and titanium, or metal layer (m2) comprises silver or copper. The long-wavelength absorption layer comprises element chosen from sulfur, indium, selenium, beryllium, copper, lithium, thallium, zinc, cadmium, oxygen, gallium, aluminum and magnesium, preferably sulfur, oxygen, selenium and/or indium.
TECHNOLOGY FOCUS - METALLURGY - The sacrificial layer is made of silicon and germanium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The etching gas is chosen from the group of chlorine trifluoride (ClF3), xeno difluoride (XeF2), bromine trifluoride (BrF3), bromine pentafluoride (BrF5) and nitrogen trifluoride (NF3).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The P layer, I layer and N layer are made of the amorphous silicon or crystalline silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of gallium in copper-gallium-based alloy powder is more than 29 to 38 at.%, and has oxygen content of 150 ppm or less. The content of gallium in the copper-gallium-based sputtering target material is more than 25 to less than 40 at.% (preferably, more than 29 to 38 at.%). The oxygen content of the copper-gallium-based sputtering target material is 200 ppm or less. Preferred Process: The copper-gallium-based alloy powder is obtained by gas atomizing method or disc atomizing method.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method (I) further comprises: sulfurizing the first layer; forming a buffer layer, where the buffer layer is disposed on the first layer; forming a second layer disposed on the buffer layer, where the second layer and the buffer layer collectively define at least a portion of an optoelectronic device structure; etching the first layer to remove a portion of the first layer; providing the first precursor so that it comprises copper and acetylacetonate (copper(II) acetylacetonate); providing the second precursor so that it comprises indium and acetylacetonate (indium(III) acetylacetonate); and forming many layers disposed on the first layer, where the layers collectively define an optoelectronic device structure (a solar cell structure, a light-emitting diode structure, or a photodiode structure). The removal of organic materials from the first layer is enabled by baking the substrate at greater than 80 degrees C, preferably 370 degrees C. The first layer is formed by depositing the first ink on the substrate via a deposition method comprising ink rolling, doctor-blade coating, wire coating, silk screening, spray coating, roll-to-roll transfer, or spin coating. In the method (II): the substrate comprises a second layer comprising molybdenum, and the first layer is formed on a surface of the second layer; the first layer is sulfurized by exposing the first layer to elemental sulfur at 400-550 degrees C, preferably 525 degrees C; and the organic solvent is removed from the first layer by heating the first layer to 370 degrees C. Preferred Components: The buffer layer comprises cadmium sulfide. The second layer comprises zinc-oxide. The nanoparticles further comprise indium. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The semiconductor layer is made of zinc oxide, indium oxide, gallium oxide and tin oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent conductive oxide layer is made of silicon nitride or titanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The encapsulation layer(s) is of hexagonal boron-nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The inorganic material is carbon material (BB) chosen from single-walled carbon nanotube, double-wall carbon nanotube, multiwall carbon nanotube, carbon nanofiber and vapor growth carbon fiber. The average particle diameter of alumina particles is 0.1-100 mu m. The ratio of 90% accumulation particle size and 10% accumulation particle size of alumina particles is 10 or less. Preferred Method: An alumina seed crystal is added to the dispersion liquid. The raw material is a solution of alumina raw material. The alumina raw material liquid is basic aluminum chloride solution obtained by dissolving basic aluminum chloride, liquid obtained by dispersing alumina raw material or boehmite dispersion liquid obtained by dispersing boehmite.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The microporous material comprises carbon cloth, reticulated glassy carbon, a microporous carbon material, and titanium/ruthenium oxide fine gauze.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The non-noble metal ions are selected from copper (Cu), lead (Pb), bismuth (Bi), tin (Sn), cerium (Ce), gold (Ag), antimony (Sb), and tantalum (Tl).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The etching of the solar cell is performed with a hydrofluoric-acid nitric acid liquid mixture.    TECHNOLOGY FOCUS - METALLURGY - The conductivity-type of the semiconductor substrate is n-type, and the impurity is aluminum.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Hydrophilic functional group (A) is a carboxylic acid group, derived from a composition having polyester resin (C) as main component which has carboxylic acid group and sulfonic acid group in the side chain. Polyester resin (C) is polyester resin with carboxylic acid group and sulfonic acid group (c1), polyester resin with carboxylic acid group in the side chain (c2), and/or polyester resin with sulfonic acid group in the side chain (c3). Melamine type crosslinking agent (B) is 40-75 mass parts with respect to 100 mass parts polyester resin (C). The protective layer contains polymer consists of a compound with carbon-carbon double bond group which takes part in a polymerization reaction. The mass content of the unit structure (C=C) part of the carbon-carbon double bond group, having formula weight of 24, with respect to the total mass of protective layer is greater than or equal to 9 mass%. Ratio ( nu 1/ nu 2) of peak intensity ( nu 1) of stretching vibration of the carbon-carbon double bond and peak intensity ( nu 2) of stretching vibration of carbon-hydrogen single bond (C-H) measured by Fourier transform-infrared spectroscopy (FT-IR) method is less than or equal to 0.3. The protective layer has a compound which does not contain sulfur, phosphorus, metallic element, metal ion, or nitrogen-containing functional group. Linear structure is silver nanowire.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: Compound (A) is 2,2-bis(4-hydroxyphenyl)propane-diglycidyl ether or 3-ethyl-3(((3-ethyl-oxetan-3-yl)methoxy)methyl)oxetane. The content of compound (A) is 0.01-15 parts mass with respect to 100 parts mass of polyimide precursor. The resin composition further contains an organic solvent.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polymer terminal structure is carboxyl group, amino group, hydroxyl group, or isocyanate group.
TECHNOLOGY FOCUS - POLYMERS - Preparation: No general preparation given. Preferred Compounds: The high-molecular compound (I) or (II) is preferably of formula (IV) or (V). EXAMPLE - Chlorobenzene (20 ml), tris(dibenzylideneacetone)dipalladium(0)-chloroform (4.1 mg), tri(o-tolyl)phosphine (4.9 mg), 5,12-bis-(2-decyl-tetradecyl)-4a,5,12,14a-tetrahydro-quino(2,3-b)acridine-7,14-dione (228 mg), and 5,5'-bis(trimethyl tin)-2,2'-bithiophene (98 mg) were mixed in nitrogen atmosphere, stirred, refluxed for 3 days, reaction solution was poured into mixed solution of methanol (200 mL) and hydrochloric acid (5 mL), stirred for 3 hours, extracted using chloroform, filtered, washed using methanol and hexane, concentrated, the solution was poured into methanol, and filtered, to obtain high-molecular compound (185 mg) as reddish brown solid having number average molecular weight of 1.2x 104, and weight average molecular weight of 3.5x 104.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inert gas includes argon, helium, neon and/or nitrogen. The inorganic material is aluminum oxide, tin oxide, silicon oxide, and/or magnesium oxide. The thickness of vapor-deposited film is 10-200 nm. Preferred Conditions: Plasma-processing is carried out such that the product of electric power density and processing time is 150 W.second/m2 or more. The protective layer is formed by applying a mixed solution containing a metal alkoxide and a water-soluble molecule, and heat-drying.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Mass density of hydrofluoric acid is 5-10, preferably 7-9%.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: The mortar is prepared using emery 600# and 1000#. The temperature of the mortar is controlled at 36 degrees C. The step of adding new suspension liquid and emery in the blending container is carried out using emery 600#.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The weight ratio of carbon carrier and alloy accelerant is 40:60-80:20. The carbon carrier comprises activated carbon, carbon black, carbon nanoparticles, carbon nanotube, carbon nanofiber, furnace black and/or graphite carbon black. The superficial area of carbon carrier is 10-2000 m2/g. The pH is 8-13 and adjusted by glycol water solution. The reductive atmosphere comprises hydrogen or mixed gas of hydrogen and inert gas. Preferred Process: The temperature for heat treatment of alloy accelerant is 200-750 degrees C.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Disclosed): Heating and condensation of 3,3',3"-nitrilotriacetic acid and N-substituted 1,2-diaminobenzene are carried out. The reaction product and a metal salt are mixed with solvent at room temperature, and metal complex is produced. Preferred Definitions:    M=cerium ion;    a=2;    c=0;and    L=ligands (V) and (VI).    EXAMPLE - Tris(2-benzimidazolyl methyl)amine (in mg) (200), potassium hydroxide (247), dimethyl sulfoxide (5 ml) and 3,5-di-t-butylbenzylbromide (626) were mixed and stirred at room temperature for 2 hours. The mixture was extracted and dried to produce a ligand. The obtained ligand (84), cerium (III) trifluoromethane sulfonate (24) and ethanol (2 ml) were mixed and stirred for 2.5 hours to produce a metal complex at yield of 40%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The glossy plating layer consisting of nickel, further consists of polishing agent containing component (I) chosen from sodium 1,3,6-naphthalene trisulfonate, benzenesulfonic acid, p-toluenesulfonamide, and saccharin, and component (II) chosen from coumarin, formaldehyde, allylsulfonic acid, 2-butyne-1,4-diol, propargyl alcohol, thiourea, ethylcyanohydrin, and pyridine.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The etching solution comprises nitric acid (65-68 wt.%), hydrofluoric acid (40 wt.%), acetic acid, sodium hydroxide, potassium hydroxide and/or water.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The platinum-based catalysts comprises carbon material. The carbon material comprises a carbon nanotube, an activated carbon or carbon fibers.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The strontium raw material is strontium carbonate, strontium nitrate and/or strontium oxide. The aluminum raw material is alumina, aluminum hydroxide and/or aluminum. The cerium raw material is cerium oxide and/or cerium nitrate. The ytterbium raw material is ytterbium and/or ytterbium nitrate.
TECHNOLOGY FOCUS - POLYMERS - Preferred Compositions: Weight ratio modified aromatic hydrocarbon:fluorocarbon resin is 10-40:90-60. Weight ratio aromatic hydrocarbon:DVB:AIBN is 100:0-10:1-4. Aromatic hydrocarbon is hydrocarbon containing benzene ring structure and can be divided into monocycle aromatic hydrocarbon, polycyclic aromatic hydrocarbon, and/or condensed ring aromatic hydrocarbon. Fluorocarbon resin is fluorocarbon resin, polyvinylidene fluoride, perfluorinated ethylene-propylene copolymer, polyvinyl fluoride, and/or ethylene-tetrafluoroethylene copolymer. Crosslinked network-based composition contains acceptable assistant or filler. Preferred Parameters: Mass concentration of aromatic hydrocarbon is 95-99%. Mass concentration of DVB and AIBN is 95-99%. Number average molar mass of fluorocarbon resin is 50-1000 thousands. Mass concentration of chlorosulfonic acid is 5-20%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The natural graphite has a particle size of 100-250 meshes. The composite comprises 80-85% of conductive aggregate material and 15-20% of adhesive. Preferred Method: The method involves mold pressing the mixture preferably at 130-140 degrees C under a pressure of 12-30 Mpa.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The high temperature processing is carried out at a temperature of 830 plus minus 0.5 degrees C for 5-10 minutes. The step of ultrasonic cleaning comprises a frequency of 80KHZ and power of 1800 W for a period of 0-8 hours. The mixed solution of alkali and isopropyl alcohol has a mass percentage of 0.9-1.2 wt%, the volume fraction of the isopropyl alcohol is 5.2-6.8%, and the etching time of the step of cleaning is carried out at a temperature of 80 plus minus 2 degrees C for 15-18 minutes. The step of placing is carried out for 0-5 minutes. Preferred Components: The mixed solution of hydrofluoric acid, hydrochloric acid and water is 0 to 20%. The hydrochloric acid has a volume fraction of 0-40%, and the water has a volume fraction of 40-100%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The aluminum source comprises aluminum chloride, aluminum nitrate, or aluminum sulfate. Preferred Method: The hydrothermal reaction is carried out at 140-190 degrees C for 48 hours. Washing is carried out using low carbon alcohol or 4C alcohol. Drying is carried out at 0-120 degrees C for 1-72 hours. Roasting is carried out at 450-800 degrees C for 1-15 hours.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The polyethylene glycol has an average molecular weight of 10000-2500000, preferably 100000-1000000. The mixture comprises (wt.%) polyethylene glycol (0.05-10, preferably 0.15-3), urea (10-40), aluminum source (2-6.5, preferably 3-5), and water.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The top-contact layer is made of aluminum zinc oxide, indium zinc oxide, or indium tin oxide or tin-doped indium oxide. The photovoltaic-absorber layer is made of copper-zinc-tin-sulfur/selenide material layer or copper-indium-gallium-diselenide material layer. The support layer is made of ethylene-vinyl acetate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The front electrode is made of titanium, palladium and silver.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Supply: In the gas supply, the cross section ratio of the inlet cross sections and those inflow cross sections coupled to the respective inlet cross sections is identical for all gas inlets. The inflow cross sections are formed as straight slots. The length of the slots is unequal. The cross section ratios are designed in such a way that in each slot the same volume of gas escapes per slot length and per time from the slot. Moreover, at least some of the inflow cross sections open into a passage from a furnace chamber of one processing furnace to a furnace chamber of a neighboring processing furnace, and being shaped as horizontal slot for passing solar cell substrates from the one processing furnace to the neighboring processing furnace. All inflow cross sections open from below into the furnace chamber. The inflow cross sections are positioned in a face of a hot wall furnace. Preferred Device: In the gate device, the inflow canals are positioned on one side of the sealing element and a gas discharge is positioned on the other side of the sealing element. The gas discharge and the gas supply each open exclusively from below into the furnace chamber. The gas discharge is symmetric to the gas supply. The gas discharge comprises exhaust cross sections opening into the furnace chamber, the exhaust cross sections having the same size than the inflow cross sections. The gas supply comprises a feed duct with a feeding cross section, and the gas discharge comprises gas outlets connected with an outlet duct with an outlet cross section, where the outlet cross section is larger than the feeding cross section.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Conductive mesh comprises zinc, aluminum, silver, silicon, copper or their combinations. Glass substrate is utilized in the substrate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The sintered compact has area of 25000 mm2 or more and thickness of 5 mm or more. Preferred Composition: The sintered compact has bixbite structure containing indium oxide, and the atomic ratio of gallium and sum of gallium and indium is 0.01-0.13. The sintered compact contains tin (100-10000 ppm) and aluminum (100-10000 ppm).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The silicon quantum dot layer has thickness of 70 nm or less. The conductive polycrystalline silicon layer has thickness of 5-10 nm. Preferred Component: The medium is silicon nitride and/or silicon oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: A surface of the metal layer is coated with molybdenum, nickel, gold, aluminum, chromium, tungsten and copper. The N type layer includes cadmium sulfide, zinc sulfide, or cadmium zinc sulfide.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass composition contains zirconium oxide (0.01-8) and boron trioxide (0.1-8). The molar ratio of alumina and barium oxide is 0.1-2. The molar ratio of sodium oxide and potassium oxide is 0-2. The substrate has liquidus temperature of 1200 degrees C or less, liquid phase viscosity of 104.5 dPa.second or more, density of 3.7 g/cm3 or less, warped point of 590 degrees C or more and high temperature viscosity of 102.5 dPa.second at 1650 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The alkali metal-based compound is sodium hydroxide. The transition metal and its compound are cobalt chloride and iron (II) chloride. The metallic ingredient is aluminum. One of the reactant capsules contains an inorganic metal hydride that is sodium borohydride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electrode layer contains copper-zinc-tin sulfide (CuZnSnS4). The electrode layer contains back surface electrode and act as light absorption layer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The (poly)alkylene glycol monomethyl ether compound is of formula (I)-(III).R1,R2=H or CH3;andn=1-2.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The binder resin is ethyl cellulose or polyvinyl butyral.
EXAMPLE - Tetrakis(bicyclo(2.2.2)octadiene)porphyrin (in mg) (520), vanadyl-sulfate n-hydrate (496), sodium acetate (550) and glacial acetic acid (80 mL) were mixed, reacted at 75 degrees C for 130 hours, water was added to the reaction mixture, extracted the product using chloroform, organic layer was washed using sodium hydrogencarbonate aqueous solution, water and saturated salt solution, dried using anhydrous sodium sulfate, concentrated and purified, to obtain tetrakis(bicyclo(2.2.2)octadiene)vanazylporphyrin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The carbon support is carbon nanopowder, carbon nanotube or carbon nanohorn. The platinum metal precursor is potassium tetrachloroplatinate(II), potassium hexachloroplatinate (IV), chloroplatinic acid or tetraammine platinum(II) chloride. The reducing agent is sodium borohydride, formaldehyde or ethylene glycol.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Solvent: The solvent is distilled water, methanol, ethanol and/or ethylene glycol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The thin film comprises transparent conductive oxide. The transparent conductive oxide comprises zinc oxide or tin oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The texturing solution is methanol or ethanol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The reducing agent is sodium borohydride.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The metal layer has an average thickness of up to 1000 microns. The metal layers include at least one alignment structure. The processing apparatus includes a furnace element (700). The processing apparatus includes a furnace portion and a reactor or micro-reactor portion. The processing apparatus includes a catalyst system, where the catalyst system includes a catalyst consisting of least one of the metal layer that engages fluid flowing through the opening in the metal layer and a catalyst located in the at least one fluid channel and formed of a different composition from at least one of the metal layers, and the metal laminate having a different composition from the metal layers. In the processing apparatus, the metal layers are connected together by stacking and aligning the metal layers and then heating the metal layers. The metal include a brazing metal on at least one side of the metal layer. Preferred Method: In the method, at least one the metal layers functions as catalyst for fluid flowing through the at least one fluid channel in the processing apparatus. The step of connecting together includes brazing together many metal layers, where the brazing metal has a different composition from the metal layers, and the brazing metal has a melting temperature of at least 10 degrees C less than the metal layer the brazing material in coated on it. The method includes a step of inserting at least one catalyst into the at least one fluid channel, where the catalyst is not formed from the metal layers. The processing apparatus includes a reactor or micro-reactor, where the reactor or micro-reactor designed to convert at least one by product of the combusted natural gas into a liquid alcohol. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The glass frit comprises complex powder combined boron trioxide, bismuth oxide, zinc oxide, silicone dioxide, alumina, magnesium oxide, disodium trioxide and zirconium dioxide. The metallic component comprises metallic component comprising aluminum and metallic component-II comprising bismuth.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The functional group(s) of the organic component is carboxyl, mercapto, amino, ester, ether, butyl radical and/or sulfite radical.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The phosphorus doping agent is phosphorus powder. The poly-crystal silicon material is high pure electronic silicon material or metallurgical compensation silicon material.    TECHNOLOGY FOCUS - METALLURGY - Preferred Components: The phosphorus doping agent is phosphorus silicon base alloy.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polyolefin resin composition contains polypropylene resin as main component or polyphenylene-ether resin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The annealing: is performed after the etching; in a combinatorial manner comprises varying the annealing temperature or varying the gas ambient within an annealing chamber during the annealing; comprises annealing the TCO at 250-350 degrees C; and comprises one of conventional thermal heating or rapid thermal annealing. The etching: is a wet etch; is achieved with an acidic wet chemistry which is one of sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid or carboxylic acid; and is performed in a site-isolated manner to form site-isolated regions. The method of claim further comprises: depositing an optical conversion layer configured to transform incident light into electrical energy over the textured surface of the TCO film; depositing a conductive material over the optical conversion layer; varying the depositing between the site-isolated regions comprising varying a deposition temperature; varying the etching between site-isolated regions comprising varying the etching chemistries; and etching the TCO with the wet chemistry to texture a surface of the TCO in an irregular pattern. The site-isolated deposition comprises placing a physical mask on the substrate and depositing the TCO film over the physical mask. The physical vapor deposition is done at room temperature. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The chlorine-doped tin oxide particles preferably exhibits a peak at 337 plus minus 10 cm-1 in Raman spectrum. The chlorine-doped tin oxide particles contain essentially no oxygen defects. Preferred Properties: The chlorine-doped tin oxide particles have specific surface area of 10-300 m2/g. The average particle diameter of primary particle is 1-5000 nm. The detection strength of average value aA and maximum value aM of oxygen satisfies the relation: aM less than aAx 3, measured by energy dispersion X ray spectrometry.The detection positions p and Cl whose detection strength (a) of oxygen is 1/5 or less of maximum value aM in measurement area, and detection position (q) whose detection strength (b) of oxygen is 1/2 or less of maximum value bM of the detection strength of Cl in measurement area substantially coincides.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The organic compound having hydroxyl group is further mixed.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layer: The transition metal oxide layer is a p-type oxide semiconductor comprising vanadium oxide, silver oxide, nickel oxide, molybdenum oxide and/or copper oxide, or n-type oxide semiconductor comprising tungsten oxide, titanium oxide and zinc oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The aqueous sol of zirconium oxide colloidal particles has specific surface area of 10 m2/g or more after heat processing at 1000 degrees C for 5 hours in air.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The carbonate of quaternary ammonium is of formulae: (NR4)2CO3 (I) and/or NR4HCO3 (II).R=1-14C hydrocarbyl.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Component: The metal complex pigment (I) is preferably of formula (II) or (III).R111-R114=alkyl, alkynyl or alkoxy;andA7-A10=carboxy, phospho or their salts. EXAMPLE - 8,8-Dichloro-4',12'-bis((E)-2-(5-(hept-1-yn-1-yl)thiophen-2-yl)ethenyl)-7,7',9,9'-tetraaza-8-ruthena-8,8'-spirobi(tricyclo(7.4.0.02,7)tridecane)-1(13),1'(13'),2,2',4,4',6,6',9,9',11,11'-dodecaene-4,12-dicarboxylic acid was reacted with ammonium thiocyanate (407 mg) and potassium cyanide (348 mg) were stirred at 130 degrees C for 5 hours, filtered, and washed by ethyl ether to obtain crude substance. The obtained crude substance was dissolved in methanol solution, and refined to obtain metal complex pigment (I).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: The silicon dioxide particles contain fused-quartz glass particles, soda lime glass particles, alkali-free glass particles, or borosilicate glass particles.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The silicon oxide particles are processed by hydrohalic acid. Preferred Component: The hydrohalic acid is hydrochloric acid or hydrofluoric acid. Preferred Property: The particle size of the silicon dioxide particles is 500 nm or less. Preferred Arrangement: The porous titanium oxide sintered compact is arranged on the light entry-side substrate.
TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The crystalline polymer microporous membrane has a thickness of 50 mu m or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The intermetallic compound comprises silicon (10-28 at.%), boron (0-500 weight ppm) and remainder of nickel and unavoidable impurities. Preferred Process: Several disk-shaped components (15a,15b) having through-hole are laminated in crystal structure of catalyst, and the position of through-hole in adjacent disk-shaped components is different. The intermetallic compound contains beta 1-phase of L12 crystal structure. The catalyst is heated at 700 degrees C or more and contacted with hydrocarbon to produce hydrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The hydrogen sensitive pigment consists of oxides, hydroxides, hydrated oxides, acids, oxysalts and polyoxometalates of tungsten, molybdenum, vanadium and/or chromium, and consists of silico-tungstic acid, phospho-tungstic acid, phospho-molybdic acid, tungsten oxide, tungstic acid and/or molybdenum oxide. The metal activator particles are a noble metal consisting of platinum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The oxide is selected from a group consisting of bismuth oxide, selenium oxide, tellurium oxide, arsenic oxide, manganese oxide, and antimony oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The temperature of the diffusion furnace in the step (ii) is 780-820 degrees C. The temperature of the diffusion furnace in the step (iii) is 800-840 degrees C. The pre-diffusion temperature in the step (iv) is 800-840 degrees C. The oxygen temperature in the step (v) is 800-840 degrees C. The temperature of the diffusion furnace in the step (vi) is 820-860 degrees C.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No preparation method is given. Preferred Components: The electroactive layer is a charge transport layer or a photoactive layer (140). The charge transport layer is a hole transport layer (130). The photoactive layer further comprises a host material or a photoactive material.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer is a homopolymer.The polymer having a structure of formula (IV) or (V).Ar1 = aryl unit, preferably phenylene, naphthylene, biphenylene, binaphthylene, anthracenylene, fluorenylene, and/or diarylamine; anda, b = mole fraction, where a+b is 1. SPECIFIC COMPOUNDS - 2 Compounds (I) are specifically claimed i.e. N,N'-di-naphthalen-1-yl-1,2,6,7,N,N'-hexaphenyl-3,8-dithia-dicyclopenta(a,f)naphthalene-4,9-diamine of formula (Ia) and 2,7-diisopropyl-N,N'-di-naphthalen-1-yl-1,6,N,N'-tetraphenyl-3,8-dithia-dicyclopenta(a,f)naphthalene-4,9-diamine.    EXAMPLE - To a mixture solution of 1,5-dihydroxynaphthalene (16 g), bromoacetophenone (41.8 g) in acetone (400 ml) was added potassium carbonate (45 g). The mixture was heated to reflux for 18 hours. The white solid was formed during the reaction. The solids were filtered off and washed with water, diluted hydrochloric acid (5%), water (100 ml) and acetone (200 m) and dried to give 2-(5-(2-oxo-2-phenyl-ethoxy)-naphthalen-1-yloxy)-1-phenyl-ethanone (a). (a) was added to a flask and then dichloromethane (2300 ml) was added to the mixture followed by adding methanesulfonic acid (50 g). The suspension mixture became pink in color and then a dark brown solution. The solution was refluxed for 1 hour and worked up to give 3,8-diphenyl-1,6-dioxa-dicyclopenta(a,f)naphthalene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The hydrogen fluoride and nitric acid are mixed in a solution in a ratio of 1:0.5-4. The mixed acid solution contains 10-30% of hydrogen fluoride and nitric acid. The acid solution contains 30-60 vol.% of nitric acid. The mixed acid contains hydrogen fluoride and nitric acid in a ratio of 1:3-8. Preferred Method: The chemical cleaning process is carried out at 20-40 degrees C until the reaction is complete.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The precursor is precursor containing water, (CH3CH2)2M or M-N-(ACH3)2 precursor, or M-O-CH3 or M-OC2H5 precursor.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first conductive foil includes aluminum, copper, steel, titanium, molybdenum, and tungsten. The solar cell is made of silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The film layer is doped with sodium, phosphorus, potassium, nitrogen, boron, arsenic and/or antimony. The film layer comprises: (copper/indium gallium)/selenium sulfur tellurium ((Cu/In1-xGax)(N)/Se1-y-zSyTez), where x s 0.7, y is 0-1, z is 0-1 and N is greater than or equal to 100; 20 atm.% of aluminum, silicon, titanium, vanadium, zinc, gallium, zirconium, niobium, molybdenum, ruthenium, palladium, indium, tin, tantalum, tungsten, rhenium, iridium, platinum, gold, lead or bismuth; (copper (indium gallium) (selenium sulfur tellurium)) ((Cu( alpha )(In1-xGax)( beta )(Se1-yzSy,Tez)(1- alpha - beta ))), where x is 0.7, y is 0-1, z is 0-1, alpha is 0-1 and beta is 0-1; ((In1-xGax)(1- alpha )(Se1-yzSy,Tez)( alpha )/ Cu(1- beta ) (Se1-yzSy,Tez)( beta ))(N), where x is greater than or equal to 0.7, y is 0-1, z is 0-1, alpha is greater than or equal to 0.8, beta is greater than or equal to 0.8 and Ni is greater than or equal to 100; Cu( alpha )(In1-xGax)( beta )(Se1-yzSy,Tez)(1- alpha - beta ), where x is greater than or equal to 0.7, y is 0-1, z is 0-1, alpha is 0.1-0.4, beta is 0.4-0.8 alpha + beta is 0.7, and alpha + beta is 0.5-0.7 when the film layer is annealed in the presence of H2S, H2Se or both; and In 1-x Cux, where x is less than 0.5. The annealing step comprises forming Cu(In, Ga)(S, Se, Te)2 with a tetragonal chalcopyrite crystal structure. The excess material comprises: Cu1-xSx, where x is 0.2-1; Cu1-x(S, Se)x, where x is 0.2-1; Cu1-x(S, Se, Te)x, where x is 0.2-1; and Cu1-x(Se1-y, Sy, Tez)x, where x is 0-1, y is 0-1 and z is 0-1. The underlying layer comprises Cum(In1-kGak)n, Se, Te or S, where k is 0-1 and n is greater than m, and Cuq(In1-pGak)r, where p is 0-1.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: In the method the thin film epitaxial layer can be grown laterally across a top surface of the assembly substrate. The method further includes: processing the assembly substrate and thin film epitaxial layer as an integrated epitaxial packaged structure within a semiconductor processing apparatus; forming at least one second separate thin film epitaxial layer or at least one second separate assembly substrate on the thin film epitaxial layer; forming a sacrificial layer (1020) attached between a bottom surface of the assembly substrate and the surface of the crystalline substrate (1010); forming a spacer situated adjacent the assembly substrate and above the crystalline substrate; controlling heating and cooling of the liquid phase material; and controlling a side profile of the openings to be vertical, step recessed or sloped to any desired angle. Preferred Components: In the method: the thin film epitaxial layer includes a graded composition throughout a thickness direction of the assembly substrate; liquid phase epitaxial material is adapted with thermal characteristics matching the assembly substrate; the crystalline substrate is detachable from the assembly substrate by a shearing action or by chemical etchant; the second separate thin film epitaxial layers and thin film epitaxial layers include different dopant species; the thin film epitaxial layer has a multidimensional structure including lines and via interconnects; and the crystalline substrate can be re-used after the epitaxial layer is separated for growing the second epitaxial layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The iron oxide is ferric oxide. The cathode active material is activated charcoal.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The polycrystal silicon wafer surface contains sodium, aluminum, chromium, iron, nickel and copper as impurities in a concentration of 1x 1010 atoms/cm2. The sum total area of (311) surface, (110) surface, (551) surface, (221) surface, (553) surface, (335) surface, (112) surface, (115) surface and/or (117) surface is 50% or more of substrate surface. The total area of (111) surface with respect to total area of substrate surface is less than 30%. The total area of (100) surface with respect to total area of substrate surface is less than 10%. The total content of carbon and oxygen in polycrystal silicon wafer is 100 ppm or less. Preferred Process: The polycrystal silicon wafer is obtained by slicing surface(s) of polycrystal silicon ingot having thickness of 30 mm or more. Preferred Properties: The polycrystal silicon wafer has average surface roughness of 1 nm or less. The surface orientation of silicon wafer is less than plus minus 10 degrees with respect to surface perpendicular to the direction of solidification.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The fluorine-doped tin oxide particles further have peak at 78 plus minus 5 cm-1, 97 plus minus 5 cm-1, 109 plus minus 5 cm-1, 186 plus minus 5 cm-1 and 207 plus minus 5 cm-1 in Raman spectroscopy, and specific surface area of 10-300 m2/g. Preferred Process: The fluorine-doped tin oxide particles are further doped with chlorine. Organic compound having hydroxyl group is further mixed during manufacture of the fluorine-doped tin oxide particles. A water-soluble tin(II) compound (excluding fluoride), a water-soluble fluoride, and basic compound are mixed in water, and obtained deposit is baked under oxygen-containing atmosphere. Preferred Composition: The fluorine-doped tin oxide particles include primary particles having average particle diameter of 1-5000 nm. The water-soluble tin(II) compound is tin(II) chloride.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: The insulating glass is phosphosilicate glass, borophosphosilicate glass or fluorosilicate glass.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Paste: The metal paste comprises (wt.%): reactant (0.1-3); and particulate conductive metal (70-92); and further comprises a sintering inhibitant. Preferred Components: The sintering inhibitant is selected from titanium resinate, titanium dioxide, aluminum oxide, zinc oxide, manganese dioxide, silicon dioxide, rhodium resinate and/or any compound that decomposes into one of the oxides at 600-900 degrees C (preferably titanium resinate). The reactant is a phosphorus-containing material, a boron-containing material or fluorine-containing material. The phosphorus-containing material is selected from phosphorus oxides, phosphorus salts, phosphorus oxyacids, phosphorus sulfides, phosphides, phosphorus-containing surfactants and/or phosphorus-containing glass frits. The boron-containing material is selected from boron powder, a stable suspension of boron, boric acid, BBr3, triethylborate and/or boron-containing glass frit. The fluorine-containing material is fluorine-containing glass frit (preferably having a fluorine-containing component that is selected from fluorides, salts of fluorine and/or oxyfluorides, especially BiF3, AlF3, NaF, LiF, KF, CsF, ZrF4, TiF4 and/or ZnF3). The particulate conductive metal is silver. EXAMPLE - A conductive metal paste comprising (parts by weight): organic vehicle (8) of ethyl cellulose dissolved in solvent, terpineol (2), Thixotrol (RTM: organic rheological additive) (0.75), butylated hydroxytolueneionol (0.2), solution (5) containing 85 wt.% phosphoric acid, silver powder (80.5), octylene glycol titanate (0.2) was prepared.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The flexible substrate is a metal. The metal or substrate is stainless steel. The stainless steel comprises 22 wt.% of chromium and 5.8 wt.% or 3-3.95 wt.% of aluminum, where the balance is iron. The metal is a metal consisting of aluminum, titanium, molybdenum, nickel, vanadium, chromium, silver or gold. The glass layer comprises 1-25 (preferably 4-16) wt.% of a sodium ion source. The sodium ion source is present at 4-18 (preferably 4-16) wt.%. The multilayer article further comprises a conductive layer disposed on at least a portion of the glass layer. The conductive layer comprises: material consisting of metals, oxide-doped metals, metal oxides and/or organic conductors; and molybdenum. The flexible metal substrate is in the form of a sheet. The multilayer article further comprises a photoactive layer disposed on the conductive layer, a cadmium sulfide (CdS) layer disposed on the photoactive layer, and a transparent conductive oxide disposed on the CdS layer. The photoactive layer comprises copper indium-gallium-selenide (CIGS), copper indium selenide (CIS) or copper zinc tin selenium (CZTS-Se). The transparent conductive oxide comprises doped zinc oxide and indium tin oxide. The substrate is a metal consisting of aluminum, titanium, molybdenum, nickel, vanadium, chromium, silver, or gold.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The nanoparticle has all three dimensions at the nanoscale. It is in form of a nanobox, or a nanotube. The salt of platinum is not soluble in water. It is platinum chloride (PtCl2). The nanoparticle of silver is a nanocube and the obtained nanoparticle is a nanobox; or the nanoparticle of silver is a nanowire and the obtained nanoparticle is a nanotube. Preferred Parameter: The homogeneous Pt/Ag single wall nanoparticle has a size from 5 nm to 100 nm, preferably from 30 nm to 100 nm. Preferred Composition: The molar concentration of the salt of platinum in step (b) is from 3x10-2 M to 4 x 10-2 M. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The electrode is cathode having sequentially laminated structure of lithium fluoride layer, calcium layer, and aluminum layer.    TECHNOLOGY FOCUS - METALLURGY - Preferred Components: The alkaline earth metal is calcium or barium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The active layer further contains electron-accepting compound, preferably fullerene derivative. The active layer has thickness of 300 nm or more, preferably 600 nm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electrodeposition liquid further contains water-soluble phosphorus compound. The colloidal particles in the liquid have negative charge. Preferred Property: The pH of the electrodeposition liquid is 5-10.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymeric substrate is a polyimide polymer (preferred) or a polyester polymer. The polymer substrate comprises filler. The filler is talc (preferred) or glass. Preferred Process: The polymer surface is heated for at least 1000 microseconds. EXAMPLE - Tetraethylorthosilicate (2.4109 g) was dissolved in 1-butanol (10 ml). Then glacial acetic acid (1.04 g) and nitric acid (0.02 g) were added. The solution was then refluxed at 118 degrees C for 2 hours. After refluxing, sodium propionate (0.2873 g), tris(acetylacetonato) aluminum (0.1179 g) and triethylborate (0.5054 g) were added to the solution. The solution was stirred until clear and 1-butanol was added until the total volume of 25 ml was achieved. Then a Kapton (RTM: Polyimide film) was diced to size and cleaned by rinsing the surface with methanol and/or argon plasma cleaned. The glass precursor formulation was filtered. The cleaned polyimide substrate was rod-coated with 0.1 ml of filtered glass precursor formulation in a clean room environment. The coated sample was dried for 30 seconds, then at 150 degrees C for 2 minutes. The drawdown coating and drying, cycle was repeated until the desired thickness was obtained. The final layer was then fired to 400 degrees C for 2 minutes at 10 degrees C/second to obtain sodium aluminoborosilicate glass composition having sodium oxide (10 wt.%) coated on Kapton (RTM: Polyimide film).
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Condition: Electric potential (I) is 2-2.5 V.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compounds: The lithium-containing transition metal oxide is a nickel type lithium-containing transition complex oxide of formula: LiaNi1-(b+c)CobMcO2, where a is 1-1.05, b is 0.1-0.35, c is 0.005-0.3, and M is aluminum, strontium and/or calcium. The negative-electrode active material comprises graphite and silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The conductive filler comprises 51-100 wt.% of conductive nanoplate. Preferred Property: The conductive nanoplate has thickness of 100 nm or less.
TECHNOLOGY FOCUS - METALLURGY - The electrodes comprises single-layer structures made of aluminum, silver and copper and multi-layer structures made of alloy of titanium and tungsten, tin and nickel.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The 1st compound semiconductor photoelectric conversion cell contains indium-aluminum-gallium phosphide (In0.48(AlaGa1-a)0.52P), where a is 0-0.7. The 2nd compound semiconductor photoelectric conversion cell contains aluminum-gallium arsenide (AlbGa1-bAs), where b is 0-0.45. The 3rd compound semiconductor photoelectric conversion cell contains gallium-indium arsenide (GacIn1-cAs), where c is 0.65 to less than 1. The 4th compound semiconductor photoelectric conversion cell contains gallium-indium arsenide (GadIn1-dAs), where d is (c-0.35) to less than c.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The soft monomer unit is 2-12C alkyl acrylate unit and 8-14C alkyl methacrylate unit. Preferred Property: The nonaqueous electrolyte has solubility parameter of 15-23.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The average particle diameter of rubber-like resin particles (A) and (B) is 500 nm or less and 30 nm or more, respectively. The difference in average particle diameter of particles (A) and (B) is 50 nm or more. The coverage (C1) of graphite particles with respect to rubber-like resin particles (A) is 20-65%. The coverage (C2) of graphite particles with respect to rubber-like resin particles (B) is 0.1-2 times than that of coverage (C1) of graphite particles. The rubber-like resin contained in the rubber-like resin particles (B) has solubility parameter (SP2) of 10.5-13.5. The difference in solubility parameter (SP2) of rubber-like resin contained in the particles (B) and solubility parameter (SP1) of rubber-like resin contained in the particles (A) is 1-6.5, where SP1 is smaller than SP2. Preferred Composition: The rubber-like resin (A) is fluoro rubber, silicone rubber, butyl rubber, ethylene-propylene rubber, isoprene rubber, butadiene rubber, styrene-butadiene rubber, chlorinated rubber, acrylic rubber and polyurethane rubber, preferably styrene-butadiene rubber containing butadiene unit (30-70 wt.%) or acrylic rubber containing soft monomer unit (30-70 wt.%). The rubber-like resin (B) is nitrile rubber containing butadiene unit (30-60 wt.%). The total content of rubber-like resin particles (A and B) is 0.1-3 parts weight, with respect to 100 parts weight of graphite particles. The weight ratio of rubber-like resin particles (A) and rubber-like resin particles (B) is 50/50-90/10.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of inorganic particles in layer (B) is 10-30 wt.%.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The content of cyclic olefin copolymer in layer (B) is 3-8 wt.% (excluding 3). Preferred Properties: The apparent density and rigid degree of polyester film is 0.8-1.1 g/cm3 and 1-10 mN/m (excluding 10), respectively. The relative reflectance of at least one side of polyester film at wavelength of 560 nm is 98% or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The separation layer is made from nitride or oxynitride of silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The treated waste silicon is separated by centrifugal force using a centrifuge or hydrocyclone.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The IIB-VIA compound semiconductor materials are selected from Cd-S, Cd-Se, Cd-Te, Cd-Zn-Te, and Cd-Hg-Te. The IB-IIIA-VIA compound semiconductor materials are selected from Cu-In-Se. The IB-IIIA-VIA compound semiconductor materials are selected from Cu-In-Se, with Al and/or Ga as partial or complete compositional substitutes for Ga. The IB-IIIA-VIA compound semiconductor materials are selected from Cu-In-Se, with Ag partial replacing Cu. The IB-IIIA-VIA compound semiconductor materials are selected from Cu-In-Se, with S or Te as partial or complete replacements for Se.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The compound including repeating unit of formulae (II) and/or (III) is compound derived by reacting natural cellulose and N-oxyl compound. The content of modified cellulose fiber is 0.1-99.9 %mass with respect to total content of resin composition. The epoxy resin is epoxy resin having aryl group. The epoxy resin is chosen from bisphenol-type epoxy resin, novolak-type epoxy resin, phenol aralkyl-type epoxy resin and biphenyl-type epoxy resin. Preferred Properties: The total light transmittance of molded product having thickness of 30 mu m is 70% or more. The bending strength of molded product is 50N or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The phenols are phenol type compound which has alkyl group. Preparation (Claimed): The compound is prepared by making phenols and anthracene-9-carboaldehyde in presence of catalyst containing non-reactive oxygen containing organic solvent and oxo-acid. Preferred Definitions:    X,Y=alkyl group as substituent.    SPECIFIC COMPOUNDS - 1 of 1 Compound (1) is specifically disclosed e.g. 9-(3-methyl-4-hydroxybenzyl)-10-(3-methyl-4-hydroxyphenyl) anthracene.    EXAMPLE - A bis-cresol hydro anthracene was prepared by putting o-cresol (108 g), anthracene-9-carboaldehyde (41.2 g), and methanol (108 g) into 300 mL reaction container with reflux tube, dissolving at 40 degrees C, adding concentrated sulfuric acid (5.4 g), performing reaction at 40 degrees C for 24 hours, dissolving reaction liquid in methyl isobutyl ketone (216 g), washing with water (108 g), removing the catalyst, stirring at 10 degrees C, and performing reduced-pressure drying after separating the precipitated crystal by filtration.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The cadmium selenide/zinc sulfide quantum dot (6-37 parts weight) is coated on zinc oxide nanorods (100 parts weight). The nanosilver particle (2-10 parts weight) is further coated on zinc oxide nanorods (100 parts weight). The zinc oxide nanorods are synthesized using aqueous solution. Preferred Method: The method further involves coating the nanosilver particle on the zinc oxide nanorods in which the cadmium selenide/zinc sulfide quantum dot is coated. The substrate is transparent substrate in which indium tin oxide (ITO) is coated.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The phosphorus diffusion is carried out using phosphoryl chloride. The arc layer is formed using silicon nitride, silicon oxy nitride, or silicon oxide. The nickel deposition is carried out using nickel sulfate, phosphoric acid, sodium hydroxide or ammonium hydroxide, ammonium chloride and water. The copper deposition is performed using copper sulfate, sodium hydroxide, formaldehyde, ethylenediamine tetraacetic acid and water. The selective cap deposition is performed using silver, tin, silver-tin, lead or nickel.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of ( epsilon )-type phthalocyanine blue seed is 8-13 parts weight. The organic solvent is alcohol, ether, benzene or phenol, preferably n-propanol.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: The substrate is glass sheet.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The copper ion salt is acetylacetonate. The zinc ion salt is zinc acetylacetonate. The tin ion salt is oxalate.
TECHNOLOGY FOCUS - POLYMERS - The approach lights are provided with LEDs which is built-in in the polycarbonate pipe.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Content of hydrogen peroxide is 10-40 mass%. Content of potassium hydroxide is 20-50 mass%. Alkaline solution is potassium hydroxide or sodium hydroxide solution (20-50 mass%). Additive is alcohol additive of hydrogen peroxide. Content of hydrofluoric acid is 10-60 mass%. Content of nitric acid or hydrochloric acid is 10-60 mass%.
TECHNOLOGY FOCUS - METALLURGY - Preferred Parameters: Tin concentration with thickness of 2-2.5 mm is less than or equal to 80 wt.ppm in indium tin brazing filler metal side surface of indium target. Tin concentration with thickness of 1.5-2 mm is less than or equal to 160 wt.ppm in indium tin brazing filler metal side surface of indium target. Tin concentration of indium tin brazing filler metal used in bonding is 10-60 at.%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The emitter layer has a sheet resistance of 90-170 ohm/square. The black silicon has lateral structures dimensions in the range of 65-200 nm. The black silicon is free of gold, and comprises silver or copper (less than 1019 cm-3). The device further has passivation layer (564) comprising aluminum oxide or silicon oxide. The processing of silicon substrate to remove outer layer includes etching black silicon surface with at least one of tetramethylammonium hydroxide, potassium hydroxide, sodium hydroxide, hydrogen fluoride, and nitric acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal(s) is chosen from vanadium, niobium, tantalum, chromium, molybdenum and tungsten. The palladium alloy contains palladium, chromium, niobium or tungsten.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The Brunauer-Emmett-Teller specific surface area of silver powder is 1-3.5 m2/g.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The charge transport medium is formed with ferrocene derivative, triphenylamine derivative, phenothiazine derivative or tetramethylpiperidinyl oxy derivative.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The metal complex is of formula: (Ru(L1)(L2)n(L3)3-n) (I). The electrolyte layer contains pyridine derivative. The metal complex shows absorption derived from spin-forbidden transition.L1=terpyridine derivative of formula (i);L2=organic molecules containing elemental phosphorus of formula: P(R1)(R2)(R3), preferably P(OR11)m(R12)a-m or group of formula (ii);L3=halo, NCS-, SCN-, CN or NCO-;n=1-3, preferably 1;X1-X3=group having adsorptivity with respect to metal oxide, preferably carboxylic acid group or its salt or ester;p-r=0-5, at least one of p-r is 1 or more;R1-R3=alkyl, alkenyl, aryl, alkyloxy or aryloxy (all optionally substituted);R11,R12=alkyl or aryl (both optionally substituted);m=0-3;Cy=optionally substituted cyclic group having one phosphorus and two oxygen as a ring atom and having one or more optionally condensing ring;R21=alkyl, aryl, alkyloxy or aryloxy (all optionally substituted);or R21+ring atom of Cy=ring;andor R1+R2,R2+R3=ring.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The plasma consists essentially of argon and oxygen with a volume ratio of 9:1-0:10. In the process the power density is: 0.25-1 W/cm2, where the treating time is at least 10 minutes; or greater than 10 W/cm2. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: When the content of zinc and copper in the solder alloy is more than 13.1 %mass, and more than 1.9 %mass, respectively, then the solder alloy does not contains aluminum.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The flux contains rosin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The oxide sinter has a density of 5.3 g/cm3 or more and a specific resistance of 12 m Omega .cm or less. The atomic ratio of additional trace element(s) with respect to the sum total content of zinc, titanium, and additional trace elements is greater than 0.001 and less than 0.005. The atomic ratio of titanium with respect to the sum total content of zinc, titanium and additional trace elements is more than 0.02 and 0.1 or less.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): Organic fluoride compound and organic lithium compound are introduced into a microreactor provided with flow path which can mix several liquids, and reacted to form a reaction product. The obtained reaction product is mixed with electrophilic agent which exhibits electrophilic effect with respect to the reaction product, to obtain fluorine-containing substituted compound. Preferred Components: The organic fluoride compound is 2-6C fluoroalkyl halide, preferably perfluoroalkyl halide. The organic lithium compound is butyllithium. The electrophilic agent is aldehyde, ketone, and isocyanate. Preferred Process: The reaction is performed at more than -20 degrees C, preferably 0 degrees C or more in diethyl ether. SPECIFIC COMPOUNDS - 8 Fluorine-containing substituted compounds are disclosed e.g. 1-bromo-1,1,2,2,3,3,4,4,5,5-decafluorohexane of formula (Ia), 1,1,1,2,2,3,3,4,4,5,5,6-dodecafluoro-6-iodoheptane, 1,1,1,2,2-pentafluoro-2-iodoethane, 1,1,1,2,2,3,3-heptafluoro-3-iodopropane and 1,1,1,2,2,3,3,4,4-nonafluoro-4-iodobutane.    EXAMPLE - Tridecafluorohexyl bromide and benzaldehyde were diluted with mixed solution of tetrahydrofuran and diethyl ether, and reacted, to obtain 6-bromo-1,1,1,2,2,3,3,4,4,5,5,6-dodecafluoroheptane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The transition metal is nickel and/or palladium. The organic transition metal catalyst is organic nickel complex or organic palladium complex.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The fluoroolefin is olefin substituted with one or more fluorine atom. The organic boron compound is of formula: RBY'2 (I) or of formula (II). The fluoroolefin is formula: R-C(-F)=C(-F)2 (III).R=aryl, heteroaryl, cycloalkyl, alkyl, alkenyl or alkynyl (all optionally substituted);Y'=hydroxy, alkoxy or alkyl, where alkoxy or alkyl of two Y' optionally crosslinked;andM'=lithium, sodium or potassium.Preferred Process: At least one of fluorine atom bonded with sp2 carbon atom of fluoroolefin is substituted by group (R). The fluoroolefin is reacted with organic boron compound in presence or absence of base. Preferred Definitions:    R=optionally substituted monocyclic, bicyclic or tricyclic aryl.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The other phases are liquid-crystal phases chosen from SmB, SmBcryst, SmI, SmF, SmG, SmE, SmJ, SmK and SmH. The other phases appear adjacent to a crystal phase when heating up the organic-semiconductor material from a crystal phase. The number (NA) of condensed rings of unit A is 3-5. The number of rings of the condensed ring is 5 or 6. NA is greater than or equal to the number of cyclic structure units (B). Unit (C) is 2-20C hydrocarbon group of -(CH2)n-X-(CH2)m-CH3.X=S, O or NH;m=0-17;andn=2 or more.When rotating unit (A) or unit (B) centering on a single bond with unit (C), the straight line which ties the carbon or hetero element which is in the outermost portion of the core of carbon atom coupled with unit (C) with unit (A) or unit (B) not directly coupled to unit (C) while rotating makes an angle of 80 degrees or less with the axis. During temperature-reduction of organic semiconductor material, N-phase, SmA-phase or SmC-phase appears prior to the appearance of other phases. The temperature at which a crystal phase appears is 200 degrees C or less. When the temperature of organic semiconductor material is increased, the other phases appear at -20 degrees C or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The aromatic derivative is 3,4-ethylenedioxythiophene. The oxidant is iron(III) p-toluenesulfonate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Conditions: Oxidative polymerization is vapor-phase oxidative polymerization carried out in the presence of organic redox molecules. The composition is formed by providing a solution containing organic redox molecules, oxidant, and solvent, and drying the solution. Preferred Components: The conductive composition further contains nonconductive polymer chosen from polyglycol, polyvinyl alcohol, and polysaccharide. The organic redox molecules are organic stable radical compound, viologen, fullerene derivative, and/or their precursors. The organic redox molecules are nonconducting polymer bearing robust but redox-active organic groups, such as nitroxide, galvinoxyl and nitronylnitroxide. The organic redox molecules are nonconducting polymer bearing redox-active groups, such as viologen or quinone. The conducting polymer is defined by polymer substance of heteroaromatic congeners. The conducting composition has an electric conductivity higher than 1 S/cm when it is measured by four-terminal method.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The selenium precursor solution is obtained by adding carbon monoxide gas and selenium metal to solvent and mixing. The copper/indium precursor solution is obtained by mixing copper and indium in coordinating solvent at 100-200 degrees C under vacuum. The indium/copper precursor solution and selenium precursor are mixed under inert gas atmosphere. The carbon monoxide gas is added at 20-200 degrees C. The nanoparticles are collected using alcohol or acetone. A halogenated salt and iodinized salt are further added to the indium precursor. Preferred Properties: The nanoparticles have size of 2-100 nm, and quantum size effect and chalcopyrite crystal morphology having regular vacancy. Preferred Composition: The copper indium selenide nanoparticles are of formula: Cu-In2-5Se4 or CuIn1.1Se2.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The solvent is amine-based compound, preferably oleylamine, octylamine, hexylamine, butylamine, propylamine, aniline, benzylamine, hexadecylamine and/or octadecylamine, or cationic surfactant, neutral surfactant and/or anionic surfactant. The cationic surfactant is alkyl trimethylammonium halide and/or alkyl trimethylammonium hydroxide. The neutral surfactant is 3-20C carboxylic acid, tri(3-20C-alkyl)phosphine oxide, tri(3-20C-alkyl)phosphine, triphenylphosphine, 3-20C-alkylthiol and/or 3-20C-alkylamine. The anionic surfactant is sodium alkyl sulfate and/or sodium alkyl phosphate. The coordinating solvent is oleylamine, octylamine, hexylamine, butylamine, propylamine, aniline, benzylamine, dibenzyl amine, tribenzylamine, diphenylamine, triphenylamine, hexadecylamine, octadecylamine, tri-n-octylamine, tri-n-hexylamine, tri-n-butylamine, oleic acid, trioctylphosphine oxide, trioctylphosphine, tributylphosphine and/or triphenylphosphine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The nanoporous material comprises anodic alumina or aerogel. The material formed by reaction of the first and second precursors or first, second and third precursors is selected from metal, metal oxide, metal nitride, metal phosphide, metal sulfide and metal carbide. The metal is selected from tungsten, ruthenium, iridium, platinum, palladium, rhodium, silver, copper, cobalt, iron, nickel, molybdenum, tantalum, titanium, aluminum, silicon, and germanium. The metal oxide is selected from titanium oxide, zinc oxide, aluminum oxide, tin oxide, hafnium oxide, zirconium oxide, tantalum oxide, hafnium oxide, niobium oxide, scandium oxide, yttrium oxide, magnesium oxide, boron oxide, silicon oxide, germanium oxide, lanthanum oxide, cerium oxide, neodymium oxide, samarium oxide, gadolinium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, and lutetium oxide. The metal nitride is selected from titanium nitride, tantalum nitride, tungsten nitride, niobium nitride, gallium nitride, indium nitride, molybdenum nitride, boron nitride, aluminum nitride, gallium nitride, tantalum nitride, zirconium nitride, hafnium nitride, and copper nitride. The metal phosphide is selected from indium phosphide and gallium phosphide. The metal sulfide is selected from zinc sulfide, copper sulfide, calcium sulfide, barium sulfide, lead sulfide, lanthanum sulfide, indium sulfide, copper sulfide, tungsten sulfide, and titanium sulfide. The metal carbide is selected from tantalum carbide, tungsten carbide, silicon carbide, and titanium carbide.
TECHNOLOGY FOCUS - METALLURGY - The vertical support brackets, horizontal support channel and support brace channel are made of light gauge galvanized steel.    TECHNOLOGY FOCUS - POLYMERS - The ballast trays are made of vacuum formed high-molecule weight polyethylene that is UV light resistant.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The silicon slice is cleaned by using concentrated sulfuric acid (H2SO4) and hydrogen peroxide solution. The drying process is carried out by using the nitrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The particulate material consists of titanium oxide, zirconium oxide, aluminum nitride and/or barium titanate. The first metal consists of copper, silver, and gold. The single layer comprises an alloy consisting of silver/gold, silver/gold/copper, gold/nickel, gold/palladium, silver/germanium, silver/copper, silver/palladium, silver/nickel, and silver/titanium. The second metal consists of chromium, nickel, palladium, titanium, and germanium. The second layer comprises a material consisting of chromium, nickel, palladium, titanium, germanium, and indium tin oxide. The third layer comprises indium-tin-oxide, indium-zinc-oxide, aluminum-tin-oxide, aluminum-zinc-oxide, or zirconium-tin-oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The hole injection material comprises hexaazatriphenylene hexacarbonitrile or a conducting polymer doped with a colloid-forming polymeric sulfonic acid.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymeric matrix consists of polymethylmethacrylate, polycarbonate, and polysiloxane.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Components: The solar cell further comprises a dielectric layer in contact with the front surface, where the doped domain extends into a window in the dielectric layer. In the solar cell, at least 95 atomic.% of the dopant in the portion of the doped domain extending into the semiconductor layer is within 100 nm of the front surface. The semiconductor layer has a thickness of 5-100 mu .    TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Method: In the method, dopant from the printed ink is driven into the semiconductor sheet during the heating step. The step of heating comprises: heating in an oven; and rastering a laser over the printed pattern. Preferred Components: The printing comprises inkjet printing. The ink has viscosity of 0.1-100 mPa-second. The ink comprises not greater than 20 wt.% of doped silicon nanoparticles.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The doped domain comprises either: an n-type dopant which is phosphorus, arsenic and/or antimony; or a p-type dopant which is boron, aluminum, gallium and/or indium. The doped domain has a dopant concentration of 5x 1018-5x 1019 atoms/cm3. Preferred Method: The driving-in comprises: heating in an oven the semiconductor sheet with the surface in contact with the doped silicon nanoparticles; and directing a laser beam at the doped silicon nanoparticles on the surface of the semiconductor sheet. The driving-in further comprises creating a dopant profile in the semiconductor sheet, where at least 95 atomic.% of the dopant in the semiconductor sheet is within 100 nm of the surface of the semiconductor sheet. The method for doping a semiconductor sheet further comprises printing a pattern of doped silicon nanoparticles on the surface of the semiconductor prior to performing the dopant drive-in.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The conductive layers each comprise a transparent or semi-transparent conductive oxide such as silicon nitride or zinc oxide.    TECHNOLOGY FOCUS - POLYMERS - The substrate of the transparent or semi-transparent layer comprises polyethylene terephthalate or polycarbonate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: In the process, the distributor comprises several cones and each distribution opening has a flare-out portion, where the flare-out portion is in fluid communication with the throttle portion of the distribution opening and the cone, the gasses passing through the flare-out portion and cones. The cones that are in fluid communication with the flare-out portion of the peripheral distribution openings open into the reaction chamber. Preferred Components: The first gas comprises a gas selected from hydrogen, argon, and/or helium. The second gas comprises a gas selected from silane, and/or trichlorosilane. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - METALLURGY - The shielding layer is made of aluminum, ferrite or carbonyl iron, stainless steel, nickel silver, low-carbon steel, silicon-iron steel and foil.    TECHNOLOGY FOCUS - POLYMERS - The encapsulant is made of polymer composite material i.e. epoxy resin. The shielding layer is conductive resin.
TECHNOLOGY FOCUS - METALLURGY - The finger electrodes and the light receiving surface alignment markings are made of glass paste containing material selected from a group consisting of aluminum, copper, silver and alloy.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The component (D) contains phosphate ester-type flame retardant.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The rubber polymer in component (B) is polybutadiene-type rubber, acrylic-type rubber and/or olefin-type rubber. The component (C) does not contain chlorine and bromine in molecular structure. The component (E) is surface-treated by a surface treating agent chosen from at least one of polyurethane resin, polyolefin resin and/or acrylic resin. The elemental phosphorus is supported by processing component (E) with phosphoric acid ester compound.
TECHNOLOGY FOCUS - POLYMERS - The damping element is made of plastic fiber reinforced plastics, nanoparticle-reinforced plastics, nylon, Polyamide-6, polyamide-66, polybutylene terephthalate (PTB), metal or quartz.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The aqueous dispersion further contains adhesion provision component. Preferred Process: The microwave is irradiated, and adhesive bond layer is heated at 50 degrees C or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metallic composition further contains dopant. The etching agent includes metal-containing composition chosen from glass frit, ammonium fluoride, ammonium hydrogen fluoride, phosphoric acid phosphorous acid, phosphorus trichloride, phosphorus pentachloride, phosphorus oxychloride, potassium hydroxide, hyrofluoric acid/nitric acid, hydrochloric acid, chlorine compounds and/or sulfuric acid. The metal in the metal-containing composition and/or metal-containing composition is chosen from silver, copper, aluminum, gold, tungsten, nickel, vanadium, chromium, cobalt, ruthenium, rhodium, palladium and tin, preferably silver or aluminum.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The component (a) is chosen from alkali metal compound, onium compound and organic amine compound.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The composite resin sheet further contains hardening agent of the epoxy resin. The hardening agent is acid anhydride. The cage-type silsesquioxane is of formula (I)-(III).at least two of R=alicyclic epoxy.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The amount of silsesquioxane in the epoxy resin is 50 %mass or more. The vinyl polymer is polymethacrylate resin having polyvinyl formal resin and/or epoxy group and hydroxyl group. The amount of vinyl polymer is 1-30 parts mass with respect to 100 parts mass of epoxy resin. Preferred Property: The weight average molecular weight of vinyl polymer is 1000-100000.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The solution obtained in step (a) has a pH value of 5-7. The mixed solvent with a volume ratio of water, ethanol to butanol is 100-130:100:0.1-3 and mole ratio of bivalent cobalt salt to bivalent ferric salt is 6-4:2. The reaction in step (b) is carried out at 120-160 degrees C for 4-12 hours.
TECHNOLOGY FOCUS - POLYMERS - Preferred Compositions: Energy-beam-curable resin composition contains silane coupling agent. Gas barrier layer contains silicon oxide in boundary part with protective layer. Base material contains cyclic olefin copolymer as a component. Copolymerization ratio norbornene:ethylene of cyclic olefin copolymer is 80:20-90:10 by mass ratio. Preferred Parameters: Melt volume rate (MVR) of copolymer of cyclic olefin is 0.8-2 cm3/10 minutes.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The sulfur-containing condensed ring compound is of formula (IV).ring X=condensed ring including p number of unit (A) and q number of unit (B);p,q=0 or more;3p+q=1-7;andR1-R4=H, halo, alkyl, alkenyl, alkynyl, aryl, alkoxy, aryloxy, acyl, alkyloxycarbonyl, aryloxy carbonyl, carboxy, formyl, hydroxy, amino, cyano, silyl, mercapto, sulfonyl, cycloalkyl, cycloalkenyl, alkylthio, ester, imino, amide, sulfide, disulfide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The doping material has a lowest unoccupied molecular orbital (LUMO) equal to or more positive than 0.0 V. The doping material has a LUMO equal to or more positive than 0.24 V in MeCN vs Fc/Fc+. The doping material is selected from compound of formula (II) (preferably 2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(perfluorophenyl)-acetonitrile); 2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(perfluoropyridin-4-yl)-acetonitrile); 2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(4-cyanoperfluorophenyl)-acetonitrile); 2,2',2''-(cyclopropane-1,2,3-triylidene)tris(2-(2,3,5,6-tetrafluoro-4-(trifluoromethyl)phenyl)-acetonitrile); or (cyclopropane-1,2,3-triylidene)tris(2-(2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenyl)-acetonitrile)).X=R1-CH2-CN;R1=aryl (preferably phenyl, biphenyl, alpha -naphthyl, beta -naphthyl, phenanthryl or anthracyl) or heteroaryl (preferably pyridyl, pyrimidyl, triazyl, or quinoxalinyl) (at least partially substituted with electron-poor groups (acceptor groups) such as electron-attracting groups (preferably fluorine, chlorine, bromine, CN, trifluoromethyl or nitro)).Preferred Material: The doping material is embedded in the matrix material. The doping material and the matrix material comprise two layers that are in physical contact with one another. The matrix material is present in a first and a second layer, where either the first or the second layer is doped with the doping material. The first and second layers are arranged adjacent to one another.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The silicon thin film is formed using silane, disilane or trisilane. The diluent gas is hydrogen, helium or argon. The doped gas is boron trifluoride, diborane or trimethylborane.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - The electrical current for the electrochemical etching the substrate is pulse electrical current. The electric current density for the electrochemical etching the substrate is 1 mA/cm2-1 A/cm2, preferably 1 mA/cm2-250 mA/cm2.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The process further comprises: doping the back side of the substrate comprising depositing aluminum on the back side of the substrate to obtain a substrate comprising an aluminum layer (7), and annealing the substrate comprising the aluminum layer; removing the aluminum layer after the step of annealing; and doping the front side of the substrate comprising lighting the front side of the substrate using a white light source producing a light radiation. Preferred Components: The substrate comprises boron having a concentration of greater than or equal to 5, preferably greater than 50 ppm by mass. The impurities comprise aluminum, iron, calcium, phosphorus or boron. The impurity concentration of each of aluminum, iron, calcium, phosphorus and boron is 1-10000 ppm by mass. The substrate comprises doping impurities such as boron, phosphorus and aluminum, metallic impurities such as iron, copper, titanium, nickel, chromium and tungsten, and structural defects such as dislocations and grain boundaries with a density of greater than 104 defects/cm2. The thickness of the aluminum layer is 10 nm to 10 pm. The concentration of boron is greater than or equal to 5, preferably greater than 100 ppm by mass. In the impurities, aluminum is present at 1-5000 (preferably 5-300) ppm by mass, iron is present at 1-5000 (preferably 5-300) ppm by mass, calcium is present at 1-5000 (preferably 5-300) ppm by mass, boron is present at 5-5000 (preferably 100-800) ppm by mass, and phosphorus is present at 1-5000 (preferably 100-800) ppm by mass. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The transparent resin is thermoplastic resin or thermosetting resin. The content of lignin in resin reinforcement material is 5 %mass or less. The content of resin reinforcement material in transparent resin composite material is 5-60 %mass. The composite material has a layer containing cellulose nanofiber and transparent resin or transparent resin film layer on at least one surface. Preferred Property: The resin reinforcement material has average fiber diameter of 5-200 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Materials: The resistance film layer is silicon nitride thin film layer, silicon dioxide film layer or aluminum oxide film layer. The alkaline solution is potassium hydroxide and/or sodium hydroxide solution.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The cell unit is preferably formed from any of Gallium Arsenide, Gallium Indium Phosphide, Gallium Indium Arsenide, Indium Phosphide, Gallium Indium Arsenide Phosphide and Aluminum Gallium Indium Phosphide. A substrate on which the cell unit is preferably formed of at least one of Gallium Arsenide, Indium Phosphide or Germanium.
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preferred Method: The method (I) further comprises: (c1) as above per se; growing the nanoparticles of the virus-nanotube-nanoparticle complex; and (d1) as above per se. In the method (I), the step of contacting the nanotubes to the virus includes non-covalent binding of the nanotubes to the virus. In the method (II), the (e1) includes forming a photoanode with the nanotube-nanoparticle complex. Preferred Components: The virus includes a template for nucleation and growth of nanoparticles. The virus is a genetically engineered virus, which is M13. The nanocomposite is a biomineralized nanomaterial, which is a virus-templated nanomaterial.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The nanoparticles include inorganic nanoparticles that include titanium dioxide nanoparticles. The nanotubes include semiconductive nanotubes that include single-walled carbon nanotubes. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - METALLURGY - A portion of tellurium in the light absorbing layer is substituted with any one of selenium or silicon. The buffer layer is formed from cadmium sulfide, zinc oxide, zinc sulfide, zing hydroxide, or magnesium-doped zinc oxide. The transparent electrode uses either zinc oxide, aluminum-doped zinc oxide, or boron-doped zinc oxide.
TECHNOLOGY FOCUS - POLYMERS - The inner cover is made of metal, while the cover body is made of resin.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The segment is derived from aryl, arylamine or thiophene building blocks. The segment comprises at least one core, which is triarylamine, hydrazone or enamine, arene, heteroarene, nitrofluorene, 9- fluorenylidenes, malononitrile, diphenoquinone, naphthalenetetracarboxylic diimide, thiophene, oligothiophene, annelated thiophene, perylene, tetrathiafulvalene, melamine, porphyrin or phthalocyanine. The linker is a covalent linker, ester linker, ketone linker, amide linker, amine linker, imine linker, ether linker, urethane linker or carbonate linker. (A) exhibits many thick monosegments of (A), which forms a layered structure. The amount of periodical (A) is 30-99 wt.%. The periodical (A) is uniformly or non-uniformly distributed in (A).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The additive is added into the silicon chip etching solution at 0.1-2 v/v%. The silicon chip etching solution is aqueous solution of sodium hydroxide or potassium hydroxide, and the concentration of the sodium hydroxide (or potassium hydroxide) is 0.5-2 wt.%.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The citric acid (or sodium citrate) is present at 1-5 wt.%, and the sodium dodecyl benzene sulfonate is present at 0.1-5 wt.%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Conditions: The aqueous titanium tetrachloride solution is obtained by adding distilled water to titanium tetrachloride precursor and magnetically stirring. The concentration of titanium tetrachloride aqueous solution is 0.1-2 mol/L. Ammonium sulfate is added to aqueous solution and stirred for 0.5-1 hour at room temperature. The molar ratio of titanium tetrachloride and ammonium sulfate is 0.1:1. The doping process is carried out by adding ammonium fluoride and stirring for 0.5-1 hour at room temperature. The molar ratio of ammonium fluoride and titanium tetrachloride is 0.1-4. Devitrification is carried out removing solvent by using a filter under reduced pressure, washing with distilled water to remove impurities, removing moisture in a vacuum oven, removing small amount of residual organics in the mixture, and removing organic matter by calcining the mixture of nitrogen/fluorine-codoped titanium dioxide nanoparticles. The photocatalyst is sintered in a tubular furnace at 350-450 degrees C for 2-5 hours.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic layer contains silicon nitride, silicon oxide, silicon oxynitride or aluminum oxide. The organic layer contains silicon compound. The uppermost inorganic layer contains surfactant does not containing silicon compound, or surfactant containing 5 %mass or less of silicon compound. The content of coating material is 10 %mass or less. The surface energy of inorganic layer is 30 or more mN/N. Preferred Properties: The viscosity of organic solvent is 10 cP or more. The viscosity of coating material is 10 cP or less, before coating.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic compound is (meth)acrylate-type organic compound crosslinked by photopolymerization reaction.
TECHNOLOGY FOCUS - POLYMERS - Preferred Compositions: Biaxially-oriented laminated polyester film comprises 0.5-2 mol.% component consists of polyethylene naphthalate in low intrinsic viscosity layer which is derived from terephthalic acid. Intermediate layer is the low intrinsic viscosity layer. Preferred Parameters: Intrinsic viscosity of laminated polyester film is 0.5-0.7 dl/g. Intrinsic viscosity of high intrinsic viscosity layer is 0.55-0.85 dl/g. Intrinsic viscosity of high intrinsic viscosity layer containing 20-50 wt.% polyethylene naphthalate resin is 0.75-1 dl/g. Total thickness ratio of high intrinsic viscosity layer is 5-60% on the basis of thickness of laminated polyester film. Low intrinsic viscosity layer contains 40-90 wt.% polyethylene naphthalate resin on the basis of the weight of this layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method comprises: cleaning a silicon chip (2) surface polishing, depositing a layer of silicon nitride film on the surface of a silicon sheet, screen printing a layer of corrosive slurry on the silicon nitride film surface to obtain a mask pattern, carrying out electrochemical corrosion to the silicon sheet; or cleaning the silicon chip surface polishing, depositing a layer of silicon nitride film on the surface of the silicon sheet, deposition of a layer of silicon oxide film on the surface of the silicon chip, photo-etching to obtain the mask pattern, cleaning the pattern using phosphoric corrosion, and carrying out electrochemical corrosion to the silicon sheet. In the method, a magnetic field strength in step of passing is 5-500 mT. The electrochemical corrosion current density is 0.01-100 mA/cm2. The magnetic field coil initial direction is vertical to the current direction.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic membrane is transparent conductive film or gas barrier layer.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The copolymerization ratio of norbornene and ethylene is 80:20-90:10. Preferred Properties: The melt volume rate of cyclic olefin resin is 0.8-2 cm3/10 minutes. The color adjustment film has retardation of 100-150 nm.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): Carbazole is halogenated using halogenating reagent such as N-halo-succinimide and coupled by reactions such as Stille coupling, Suzuki coupling and Ullmann coupling with boric acid ester compound having thiophene ring. The resultant product is further processed using halogenating reagent and reacted with phosphoric acid or phosphate ester, to obtain the dye (I). Preferred Process: The semiconductor electrode is formed by immersing the substrate with porous semiconductor in the varnish containing phosphonic acid group-containing dye. Preferred Definitions:    X=group having carbazole ring;and    Y'=group having thiophene ring.    SPECIFIC COMPOUNDS - 60 Phosphonic acid-containing compounds are disclosed e.g. diethyl(5-(5-(9-ethyl-9H-carbazol-3-yl)-4-hexylthiophen-2-yl)-4-hexylthiophen-2-yl)phosphonate of formula (A), (5-(5-(9-ethyl-9H-carbazol-3-yl)-4-hexylthiophen-2-yl)-4-hexylthiophen-2-yl)phosphonic acid, (4-decyl-5-(4-decyl-5-(9-ethyl-9H-carbazol-3-yl)thiophen-2-yl)thiophen-2-yl)phosphonic acid, (4-butyl-5-(4-butyl-5-(4-butyl-5-(9-ethyl-9H-carbazol-3-yl)thiophen-2-yl)thiophen-2-yl)thiophen-2-yl)phosphonic acid and (5-(4-butyl-5-(4-butyl-5-(4-butyl-5-(9-ethyl-9H-carbazol-3-yl)thiophen-2-yl)thiophen-2-yl)thiophen-2-yl)-4-butylthiophen-2-yl)phosphonic acid.    EXAMPLE - 3-(5-(5-Bromo-3-hexylthiophen-2-yl)-3-hexylthiophen-2-yl)-9-ethyl-9H-carbazole (in mg) (257), tetrakis (triphenylphosphine) palladium (28), diethyl phosphate (74), triethyl amine (56), toluene (1.84 g) were stirred and heated in a reaction container at 90 degrees C. The resultant solution was filtered and the filtrate was distilled, to obtain a crude product. The obtained product was refined using column chromatography, to obtain (5-(5-(9-ethyl-9H-carbazol-3-yl)-4-hexylthiophen-2-yl)-4-methylthiophen-2-yl)phosphonate with yield of 32%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The average diameter of dispersed phase is 0.1-50 nm. Preferred Composition: The metallic elements are chosen from 3B group, 4A group, 5A group and 6A group metals. The molar ratio (M2/M1) of metallic element (M2) and rare earth metal and/or 4th period transition metal (M1) is 1-4.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The inorganic medium is inorganic-type amorphous medium derived from inorganic polymer. The inorganic polymer is silicon-containing polymer, borazine polymer or borazine-silicon-based polymer. The silicon-containing polymer is polysilazane.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): The fullerene derivative (I) is manufactured by mixing fullerene and metallic compound comprising element of group 8, 9 or 10 in periodic table, adding and reacting aryl-containing compound of formula: H-R1, and reacting metallic compound by adding chelating agent having at least one amino group or carboxyl group. Preferred Composition: The solvent is ester solvent. Preferred Definitions:    R1=phenyl optionally substituted by 1-20C organic group;    a=4-12;and    ring A=60C fullerene, 70C fullerene or fullerene structure other than 60C fullerene and 70C fullerene.    EXAMPLE - 1,1,2,2-Tetrachloroethane (50 mL), and anhydrous ferric trichloride (in g) (22.5) were mixed, and deaerated 60C fullerene (2) and phenol (13.05) were added, and stirred at 25 degrees C. Saturated sodium hydrogen carbonate aqueous solution (200 mL) was added, and reaction is stopped. Ethyl acetate (200 ml) and ethylenediaminetetraacetic acid (8.12) were added, and stirred for 30 minutes. The reaction mixture was filtered, extracted, washed, dried, concentrated, crystallized with ethyl acetate (10 ml) and toluene (200 ml), and vacuum-dried at 50 degrees C for 3 hours, to obtain fullerene derivative (1.45).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metallic component comprises organic silver compound. The conductive material comprises silver powder. The conductive paste further comprises zinc oxide powder and aluminum powder. The glass frit is complex powder having silicon dioxide-aluminum dioxide-lead oxide-boron trioxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-magnesium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-zirconium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-zinc oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-magnesium oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-zirconium oxide-zinc oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-magnesium oxide-zirconium oxide-zinc oxide group, silicon dioxide-aluminum dioxide-boron trioxide group, silicon dioxide-aluminum dioxide-boron trioxide-magnesium oxide group, silicon dioxide-aluminum dioxide-boron trioxide-zirconium oxide group, silicon dioxide-aluminum dioxide-boron trioxide-zinc oxide group, silicon dioxide-aluminum dioxide-boron trioxide-magnesium oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-boron trioxide-zirconium oxide-zinc oxide group and silicon dioxide-aluminum dioxide-boron trioxide-magnesium oxide-zirconium oxide-zinc oxide group.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic component is aromatic family or aliphatic hydrocarbon compound comprising carboxyl group, mercapt group, amino group, ester group, butyl radical, and/or sulfite radical.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The conductive paste further comprises zinc oxide powder and aluminum powder. The glass frit is complex powder having silicon dioxide-aluminum dioxide-lead oxide-boron trioxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-magnesium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-zirconium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-zinc oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-magnesium oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-zirconium oxide-zinc oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron trioxide-magnesium oxide-zirconium oxide-zinc oxide group, and lead-free complex powder comprising silicon dioxide-aluminum dioxide-boron trioxide group, silicon dioxide-aluminum dioxide-boron trioxide-magnesium oxide group, silicon dioxide-aluminum dioxide-boron trioxide-zirconium oxide group, silicon dioxide-aluminum dioxide-boron trioxide-zinc oxide group, silicon dioxide-aluminum dioxide-boron trioxide-magnesium oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-boron trioxide-zirconium oxide-zinc oxide group or silicon dioxide-aluminum dioxide-boron trioxide-magnesium oxide-zirconium oxide-zinc oxide group.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organo-silver compound comprises silver and carboxyl, mercapto, amino, ester, ether, butyl radical and/or sulfite radical based aromatic or aliphatic hydrocarbon compound, organic silver compound-I selected from silver formate, silver oxalate, and silver citrate or organic silver compound-II selected from silver butylate, silver propionate, silver malonate, silver acetate, silver succinate, silver maleate, silver terephthalate and silver benzoate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The conductive paste composition further comprises zinc oxide powder. The metallic component comprises metallic component-I selected from silver or aluminum and metallic component-II selected from lead or bismuth. The glass frit is complex powder having silicon dioxide-aluminum dioxide-lead oxide-boron oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron oxide-magnesium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron oxide-zinc oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron oxide-magnesium oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-lead oxide-boron oxide-zirconium oxide-zinc oxide group or silicon dioxide-aluminum dioxide-lead oxide-boron oxide-magnesium oxide-zirconium oxide-zinc oxide group or lead-free complex powder having silicon dioxide-aluminum dioxide-boron oxide group, silicon dioxide-aluminum dioxide-boron oxide-magnesium oxide group, silicon dioxide-aluminum dioxide-boron oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-boron oxide-zinc oxide group, silicon dioxide-aluminum dioxide-boron oxide-magnesium oxide-zirconium oxide group, silicon dioxide-aluminum dioxide-boron oxide-zirconium oxide-zinc oxide group or silicon dioxide-aluminum dioxide-boron oxide-magnesium oxide-zirconium oxide-zinc oxide group.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The functional group of the organic component is carboxyl group, mercapto group, amino group, ester group, butyl radical or sulfite radical.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The glass frit is silicon dioxide-aluminum oxide-lead oxide-boron oxide-magnesium oxide group, silicon dioxide-aluminum oxide-lead oxide-boron oxide-magnesium oxide-zirconium oxide group, silicon dioxide-aluminum oxide-lead oxide-boron oxide-magnesium oxide-zinc oxide group and/or silicon dioxide-aluminum oxide-lead oxide-boron oxide-magnesium oxide-zinc oxide-zirconium oxide group.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The conductive paste composition further comprises organic component that is chosen from carboxyl group, mercapto group, amino group, ester group, butyl radical, and/or sulfite radical.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The phosphorus is liquid phosphorus oxychloride. Preferred Property: The metallurgical crystalline silicon sheet has resistance of 2-80 Omega /square.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The sintering target contains 5 wt.% or less of gallium oxide and 3 wt.% or less of aluminum oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The etching gas is comprised of one or more gas chosen from the group consisting of Xenon difluoride (XeF2), chlorine trifluoride (ClF3), bromine trifluoride (BrF3), bromine pentafluoride (BrF5). The coolant gas is comprised of nitrogen gas or inert gas and oxygen atom.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Properties: The thickness of silicon layer is 0.03-0.05 mu m. The corrugation has a diameter of 20-60 nm. The photoelectric conversion element has a convex portion having a height of 1-50 nm.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compound: The substrate contains aluminum-gallium nitride of formula: AlxInyGazN, where x, y and z is 0-1, and x+y+z is not 0, gallium phosphide, gallium arsenide, neodymium-gallium oxide, lithium-gallium oxide, alumina, magnesium aluminate, zinc oxide, silicon, silicon carbide, silicon-germanium, or zirconium boride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Gas: The cleaning gas contains helium, argon, nitrogen and/or oxygen.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: ( beta )-Diketone is hexafluoroacetylacetone or trifluoroacetylacetone.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The positive-electrode electrolyte solution is aqueous solution containing manganese-ethylenediaminetetraacetic acid complex. The concentration of manganese-ethylenediaminetetraacetic acid complex in aqueous solution is 0.2-1 mol/L. The negative-electrode electrolyte solution is aqueous solution containing chromium-ethylenediaminetetraacetic acid complex. The positive-electrode electrolyte solution and negative-electrode electrolyte solution are aqueous solution containing manganese-ethylenediaminetetraacetic acid complex and chromium-ethylenediaminetetraacetic acid complex.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The amorphous semiconductor material is hydrogenated amorphous silicon material. The primary precursor material is phosphine. The primary layer contains n+ hydrogenated amorphous silicon material. The secondary precursor material is silane. The secondary layer contains hydrogenated amorphous silicon material. The tertiary precursor material is diborane. The tertiary layer contains p+ hydrogenated amorphous silicon material. The crystallization-stop precursor material is methane. The crystallization-stop layer contains amorphous silicon carbide (128). The metal film is aluminum film. The substrate is glass substrate. The semiconductor film is a silicon film. Preferred Properties: The crystallization-stop layer has thickness of less than 1 mu m, preferably less than 20 nm. The silicon film has thickness of 0.1-40 mu m. The aluminum layer has thickness of 5-300 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The titanium dioxide nanowires further comprise titanium dioxide nanowires affixed to pristine graphene sheets.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent (S1) is dimethylformamide (DMF), cyclopentanone (CPO), 2-propanol, 1-cyclohexyl-2-pyrolidine (CHP), and/or N-methyl-2-pyrroiidione (NMP). The solvent (S1) maintains the solute in a substantial liquid suspension for at least 2 weeks. In the solution, the solvent (S1) is a mixture of CHP and NMP in 1:1 ratio. The solvents (S2) and (S3) are DMF, CPO, CHP, and/or NMP. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The indium target has average grain size of 1-20 mm, power density of 2 W/cm2, and film-forming rate of more than 4000 Angstrom /minute in gas-pressure of 0.5 Pa under argon atmosphere. Preferred Composition: The total concentration of copper, nickel and iron in the indium target is 100 weight ppm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The organometallic compound raw material and/or reactive gas contain carbon, nitrogen, hydrogen, silicon, phosphorus, boron and/or metal atom. The metal catalyst contains tungsten, platinum, rhodium or ruthenium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The organometallic compound is of formula (I), (II) or (III).M1=cobalt, nickel, iron, manganese, ruthenium or chromium;R1-R15=H or CnH2n+1;M2=tungsten, molybdenum or titanium;M3=platinum, niobium, zirconium or titanium;R16-R18=CnH2n+1;andn=1 or more.The reactive gas contains ammonia, dimethylhydrazine, methylamine, dimethylamine, silane, disilane or hydrogen.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The CBD reaction liquid comprises zinc source(s), sulfur source(s), ammonia and/or ammonium salt, citric acid compound(s), and water. The concentration of citric acid compound is 0.001-0.25M and the concentration of ammonia and/or ammonium salt is 0.001-0.4M. The pH of CBD reaction liquid before reaction start is 9-12. The surface-treatment liquid contains an aqueous solution of compound having a cyano group or an amino group. The compound having cyano group is potassium cyanide. The compound having amino group is ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine and/or pentaethylenehexamine.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The electron-accepting material comprises polydiallyldimethyl ammonium chloride, polyallylamine hydrochloride, methacryloxyethyltrimethyl ammonium chloride, acryloxyethyl dimethylbenzyl ammonium chloride, methacryloxyethyl dimethylbenzyl ammonium chloride, and/or acryloxyethyltrimethyl ammonium chloride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: During formation process a reducing agent which reduces the metal oxide is supplied. During removal process, etching gas is supplied and metal contained in the solid solution layer is removed. The layer (A) containing carbon is formed on the substrate. The metal layer containing the metal is formed on the layer (A). The layer (A) and the metal layer are heated to the solid solution temperature. The graphene is made to grow in a direction parallel on the surface of the substrate by making non-uniform concentration distribution of a direction parallel on the surface of the substrate concentration distribution of the carbon in the solid solution layer. The interval of the crystal grain boundary along the direction (A) and direction (B) are constant. Preferred Components: The substrate is a silicon dioxide substrate or a silicon group board which attached the silicon dioxide film to the surface. The metal is an alloy containing iron, nickel and/or cobalt. The etching gas is chlorine. The substrate is a single layer or multilayer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The average particle diameter of bio-origin silica and carbonaceous material is 0.1-500 mu m. The method uses potassium compounds (0.1-20 wt.%) as reaction catalyst with respect to the mass of bio-origin silica. The mixture of bio-origin silica, carbonaceous material, and metal silicon is granulated as granulated material (1-8 mm) using binder. Preferred Process: The granulated material is supplied to reactor during the reaction from upper part of vertical reactor and extracting the reaction residue from the lower part.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The silver paste comprises particulate silver, an organic vehicle and a glass frit consisting of: lead-free glass frits with a softening point temperature of 550-611 degrees C and containing 11-33 wt.% of silica (SiO2), 0-7 wt.% of alumina (Al2O3) and 2-10 wt.-% of boron oxide (B2O3); and lead-containing glass frits with the softening point temperature of 571-636 degrees C and containing 53-57 wt.% of lead (II) oxide, 25-29 wt.% of SiO2, 2-6 wt.% of Al2O3 and 40-73 wt.% of B2O3. A total content of glass frit in the silver paste is 0.25-8 wt.%. The particulate silver is present in a proportion of 50-92 wt.%, based on total silver paste composition. The organic vehicle content is 20-45 wt.% based on total silver paste composition.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The sacrificing layer is silicon nitride layer and the etching liquid is phosphoric acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The maximum concentration value of copper is 5asterisk1014-1asterisk1015 atoms/cm3. Preferred Parameters: The output electric power of the induction coil in casting process of polycrystalline material is 350-380 kW.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Property: The crystallized polyester resin pellets do not exhibit exothermic peak by differential scanning calorimetry. Preferred Process: Heat processing is solid state polymerization. Heat processing is carried out at temperature less than 190 degrees C or more than the melting point of polyester resin pellets by 10 degrees C for 5-90 hours. Preferred Component: The non-crystallized polyester resin pellets are obtained by esterifying or transesterifying dicarboxylic acid component or its ester-forming derivative and glycol component, and subsequently the polyester resin pellets are obtained by carrying out polycondensation reaction.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The titanium sintered porous component has an apparent spring constant of 1x 104-1x 105 N/mm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: An impurity element is doped to zinc oxide, to form polycrystal film. Preferred Properties: The transparent conductive film has light transmittance of 80% or more at 400-800 nm and resistivity of 4x 10-4 Omega .cm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The matrix material comprises sol-gel material. Preferred Properties: The refractive index of corrugated layer is 1.55-2.25. The nanoparticles have particle size of 10-60 nm. Preferred Layer: The photoelectric conversion unit has a non-monocrystal silicon layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The concentration of hydrofluoric acid, nitric acid and sulfuric acid in the liquid mixture is 10-20 %mass, 10-20 %mass and 20-50 %mass, respectively.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The paste is obtained by mixing polyol-type compound having molecular weight of 100 or more and organic solvent. The organic solvent is aromatic-type or terpene-type monoalcohol solvent. The polyol-type compound is chosen from 3-methyl-1,5-pentanediol, 2,4-diethyl-1,5-pentanediol, 2-ethyl-1,3-hexanediol, 3-methyl-1,3-butanediol, 2,2-dimethyl-1,3-propanediol, 2,2-diethyl-1,3-propanediol, 2-butyl-2-ethyl-1,3-propanediol and trimethylolpropane.    TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The weight average molecular weight of methacrylic resin is 20000-200000.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The oxide is zinc oxide. The acid aqueous solution is hydrochloric acid aqueous solution or sulfuric acid aqueous solution.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Ligand: The ligand is acetylacetone.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The etching component is a mixture of hydrofluoric acid and hydrogen peroxide or a mixture of ammonium hydroxide and hydrogen peroxide.    TECHNOLOGY FOCUS - POLYMERS - The thickening agent is one or more selected from methylcellulose, carboxymethyl cellulose, polyethylene glycol, sodium polyacrylate and polyvinyl alcohol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The doping is performed in hydrogen or hydrogen plasma atmosphere. Preferred Component: The thin film is made of indium oxide, tin oxide and indium-tin oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal core contains gold, platinum, silver, copper, iron or semiconductor quantum dot.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The surface modifier is of formula: Rt-(Rh-O)l-Rf-Ra-X. The hollow particle stacked material is spherical material having diameter of 30-400 nm. The coverage of surface modifier of metal core in surface of metal core is 20% or more.Rt=H, hydroxy, 1-4C alkoxy or 1-4C alkyl;Rh=linear or branched 2-6C alkylene;Rf= group of formula (i) or (ii);Ra=3-18C linear alkyl, 3-18C branched alkyl or 3-18C aralkyl;X=thiol, cyano, dithiol, amino or isocyano;Y1,Y2=H or fluoro, where at least one of Y1 and Y2 is fluoro;l,m=1-12;n=1-6;and-(Rh-O)l-=cyclic group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The composition of matter comprises ((PY'5Me2)Mo(S2))(CF3SO3)2. Preferred Method: In the method, the water bath is maintained at a pH of less than 5 (preferably less than 4, especially 3). The negative potential applied to the cathode is an over potential of approximately -400 mV compared to the standard hydrogen electrode. Preferred Definitions:    x+ and x-=2;    M'=Mo.    EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The thickness of the cerium(III)chloride-doped polyaniline electrochromic film is 0.01-1 mu m. Preferred Composition: The strong alkaline solution comprises mixture of sodium hydroxide and potassium hydroxide. The strong acidic plating solution comprises sulfuric acid, phosphoric acid, hydrochloric acid and/or perchloric acid. The concentration of strong alkaline solution and strong acidic plating solution is 0.05-2 mol/L, and 0.1-3 mol/L, respectively. The mass ratio of aniline and cerium(III)chloride in the strong acidic plating solution is 0.01:0.2. The content of aniline in the strong acidic plating solution is 0.08-2 mol/L.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The thickness of the first high weather resistant PET layer is 30-100 mu m, preferably 5-15 mu m and the second high resistant PET layer is 30-60 mu m, preferably 5-15 mu m. The thickness of the PET base material is 100-250 mu m. The thickness of the grafting layer is 1-5 mu m. The binding material is a two-component polyurethane glue.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Materials: The concentrated acid is concentrated hydrochloric acid and nitric acid. The titanium source is titanyl sulfate, titanic sulfate, titanium tetrachloride, titanium tetraisopropoxide, or tetra-n-butyl titanate. The tin resource is tin chloride or tin acetate. The inert gas is nitrogen, argon or helium. The reducing gas is hydrogen or methane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electrolyte is lithium salt lithium chlorate (LiClO4), lithium boro fluoride (LiBF4), lithium arsenide fluoride (LiAsF6) and lithium phosphofluoride.    TECHNOLOGY FOCUS - METALLURGY - Preferred Components: Conductive metal sheet is prepared from molybdenum, gold, silver, copper, titanium and lead. Inert cylinder electrode is prepared from molybdenum, gold, silver, copper, copper alloy, titanium, titanium alloy, lead or lead alloy. Diameter is not more than 6 mm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Ionic liquid is imidazole ionic liquid.
TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The priming material is deuterated, and is homopolymer or copolymer of monomeric unit (I) and monomeric unit chosen from phenylene, naphthylene, triarylamine, fluorene, N-heterocyclic compound, dibenzofuran, dibenzopyran, dibenzothiophene, and deuterated analogs. The priming material has at least one nitrogen-containing unit of formula (II). Alternately, the priming material contains nitrogen-containing unit of formula (Ia) or (IIa).X'=H and deuterium;andY'=H, deuterium, alkyl, aryl, silyl or crosslinked vinyl.Preferred Layers: The primary active layer is a hole transport layer or hole injection layer. The secondary active layer is a photoactive layer or hole transport layer. The hole injection layer comprises a conductive polymer and a fluorinated acid polymer. Preferred Definitions:    X=H, deuterium or bromo.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The spherical pore-forming agent is powder, starch, poly(methylmethacrylate) (PMMA) or other self spherical substance. The fibrous pore-forming agent is paper fiber, carbon nanofiber, polyvinyl alcohol fiber or other self fibrous substance. Preferred Method: The discharge sintering process is carried out at 1300-1450 degrees C for 2-4 hours, and the plastic condition is 450-650 degrees C and temperature elevation rate is 0.5-1 degrees C per minute.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic carrier is ethyl cellulose, terpineol, diethylene glycol, butyl ether acetate and/or ethyl lactate.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The positive-electrode electrolyte solution is an aqueous solution comprising manganese-EDTA complex, manganese-ethylene glycol bis( beta -aminoethylether)-N,N,N',N'-tetraacetic acid complex (Mn-EGTA), Mn-hydroxyethyliminodiacetic acid complex (Mn-HIDA), Mn-diethylenetriaminepentaacetic acid complex (Mn-DTPA complex), Mn-EDTA-hydroxide complex, iron-EGTA complex, iron-HIDA complex, iron-DTPA complex, and/or iron-EDTA-hydroxide complex, preferably Mn-EDTA complex, Mn-DTPA complex, and/or Mn-EDTA-hydroxide complex, or iron-EGTA complex, iron-HIDA complex, and/or iron-DTPA complex. The total concentration of manganese complex and iron complex in the aqueous solution is 0.1-1 mol/L. The negative-electrode electrolyte solution is an aqueous solution containing chromium-EDTA complex (Cr-EDTA), Cr-EGTA complex, Cr-EDTA-hydroxide complex, Cr-nitrilotriacetic acid complex (Cr-NTA), and/or Cr-DTPA complex. The positive-electrode electrolyte solution and negative-electrode electrolyte solution are aqueous solutions containing Mn-EDTA complex and Cr-EDTA complex. The concentration of chromium complex in the aqueous solution is 0.1-1 mol/L.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The anchor layer contains polyols and isocyanate compound. Preferred Properties: The thermal expansion coefficient of the anchor layer is 20-100 ppm/ degrees C. The thermal expansion coefficient of the gas barrier layer is 1 ppm/ degrees C or less. The tensile elasticity modulus of the anchor layer is 0.5-7 GPa. The tensile elasticity modulus of the gas barrier layer is 10 GPa or less. The thickness of the anchor layer is 10-500 nm. The thickness of the gas barrier layer is 10-1000 nm. The spectral transmission factor in 400-1000 nm of the gas-barrier laminated film is 85% or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Conditions: Reaction is carried out at 380-430 degrees C. Hydrogen bromide is diluted with inert gas. The gas flow rate is adjusted to 20 ml/minute or more per g of silicon. Silicon is metal-grade silicon. After reaction, tribromosilane is separated and recovered by distillation.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Condition: The reduction speed rate of ingot is 0.05-0.2 mm/minute.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The atomic ratio of transition element with respect to copper is 0.5-3.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The alkali aqueous solution contains water and potassium hydroxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Solvent: The organic solvent is chosen from 2-methyl-2,4-pentanediol, propylene glycol, 2,2,4-trimethyl-1,3-pentanediol, 1,3-butanediol, 1,4-butanediol, 1,6-hexanediol, 2,2-dimethyl-1,3-propanediol, hydroquinone, 1,4-cyclohexane diol and N-methyl proline.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The phosphorus oxides are of formula (PxOy) (I). The phosphoric acids are of formula (HO(P(O)(OH)O)nH) (II). The phosphoric acids comprise trimetaphosphoric acid. The phosphorus oxide is tetraphosphorus decaoxide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The poly(amic acid) is an aromatic or aliphatic poly(amic acid). Preferred Process: The process further comprises curing the mixture after drying, and mixing the phosphorus oxide and poly(amic acid) with a poly(amic acid)-compatible solvent to form the mixture. The step of mixing a phosphorus oxide in a poly(amic acid) solution to form a mixture comprises first pre-dissolving the phosphorus oxide in a poly(amic acid)-compatible solvent, which is N-methylpyrrolidone (preferred), N,N-dimethylformamide, N,N-dimethylacetamide or M-ethylpyrrolidone. The poly(amic acid)-compatible solvent comprises a precursor solvent from which the poly(amic acid) has been formed.x = 1-4;y = 4-10; andn = 1-10, preferably 1-4. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent dielectric layer is made of a material selected from a group consisting of silicon nitride, silicon dioxide, tin doped indium oxide, tin dioxide, aluminum zinc oxide, and zinc oxide.
TECHNOLOGY FOCUS - METALLURGY - The metal contact structure and metal line are fabricated from at least one of silver, silver alloy, copper, tin, cobalt, rhenium, nickel, zinc, lead, or aluminum. The metal contact structure is fabricated by silver. The metal line is fabricated by silver or copper.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The temperature of secondary resin composition during roll compression bonding is more than the (TmB-8( degrees C)) and less than (Tmb+3( degrees C)). Preferred Process: The surface layer is formed with primary microporous film, and intermediate layer is formed with secondary microporous film when lamination microporous film has 3-layered constitution containing surface layer and intermediate layer.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The primary resin compositions are polypropylene (100 mass parts), and thermoplastic resin composition containing polyphenylene ether (5-90 mass parts). The secondary resin composition is ethylene resin composition. The primary microporous film has sea island structure having sea portion of phase containing polypropylene, and island portion of phase containing polyphenylene ether. Preferred Property: The particle size of island portion is 0.01-10 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The acceptor impurity comprises at least one metallic compound or organometallic compound. The acceptor impurity comprises at least one compound chosen from antimony, arsenic, bismuth, phosphorus, nitrogen, lithium, potassium, sodium, rubidium, copper, silver and gold.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The M1 is manganese, cobalt, or calcium. The M2 is selenium or sulfur. The buffer layer has thickness of 10-100 nm. The solar cell has lattice constant of the buffer layer is 0.50-0.61 nm. The buffer layer is formed with physical vapor deposition.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The light absorption layer contains group IB element, IIIB element, and/or VIB element. The semiconductor layer contains group IIIB element and group VIB element. The primary semiconductor layer contained in the photoelectric conversion element contains indium sulfide (In2S3). The secondary semiconductor layer contained in photoelectric conversion element contains zinc oxide. Preferred Properties: The porous layer region has porosity of 10-80% and thickness of 5-70 nm.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The glutarimide acrylic resin (G) does not contain unit of formula: -(CH2-C(-R7)(-R8))-.R7=H or 1-8C alkyl;andR8=6-10C aryl.Preferred Composition: The content of alkylacrylate ester-type crosslinked elastomer particles is 5-40 weight% with respect to 100 weight% of resin composition. The content of components (G) and (F) in the resin composition is 40-90 weight% and 10-60 weight%, respectively. The component (F) is obtained by copolymerizing 100 parts weight of monomer mixture containing 50-100 weight% of alkyl acrylate ester and 0-50 weight% of methacrylic acid alkylester, 0.5-5 parts weight of polyfunctional monomer having 2 or more nonconjugated double bonds in a molecule, and monomer mixture (E) containing 60-100 weight% of methacrylic acid alkylester and 0-40 weight% of alkyl acrylate ester, or 50-90 weight% of methacrylic acid alkylester, 0-40 weight% of alkyl acrylate ester and 10-35 weight% of unsaturated carboxylic acid, in presence of alkyl acrylate ester-type crosslinked elastomer particles (B) having average particle diameter of less than 80 nm. The content of alkyl acrylate ester-type crosslinked elastomer particles in (meth)acrylic-type resin (F) is more than 30 weight% to 60 weight%. Preferred Properties: The acrylic resin film has glass transition temperature of 115 degrees C or more, haze value of 1% or less and thickness of 300 mu m or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic compound particles are inorganic-oxide particles containing primary particles connected with bead string form. Preferred Property: The circularity of the inorganic compound particles is 0.5-1.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The inorganic compound particles and polymer are bonded through a coupling agent. The coupling agent is of formula: X-Si(((R1)R2)R3). The polymer contains methacrylate or acrylate as monomer unit, and has crosslinkable functional group(s) including reactive double bond(s). The reactive double bond is a carbon-carbon double bond in a (meth)acryloyl group. The content of inorganic compound particles is 70-96 %mass, preferably 55-94 volume%. The organic-inorganic composite further includes 30 %mass or less of free polymer which is not bonded with the inorganic compound particles. The organic-inorganic composite is crosslinked by radical polymerization using crosslinking agent. The coating material further contains organic solvent, photoinitiator and hardening agent.X=polymerization start group;R1,R2=1-10C alkyl;andR3=1-10C alkoxy, H, hydroxy, or halo.Preferred Properties: The polymer has molecular weight distribution of 2.3 or less, number average molecular weight of 10000-100000 g/mol. The organic-inorganic composite film has refractive index of 0.02 which is lower than the theoretical refractive index. The organic-inorganic composite film has refractive index of 1.42 or less, minimum reflectance of 1.5% or less, and pencil hardness is more than F. The coating material has solid content of 0.2-50 %mass, viscosity of 5 Pa.second or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layers: The primary conductive layer contains tantalum, titanium, chromium, aluminum, niobium, vanadium, tungsten, hafnium and copper. The solid electrolytic capacitor has electrolytic layer containing manganese dioxide, tetracyano quinodimethane, polyethylene dioxythiophene, polyaniline and polypyrrole.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The thermoplastic polyamide resin comprises dimer acid, diamine and/or dicarboxylic acid.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The organic electroconductivity material-doped polystyrene sulfonate is poly (3,4-ethylene dioxythiophene). Preferred Property: The frequency of electromagnetic wave is 5 kHz to 200 GHz.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The coating film contains metal nanoparticles. The coating composition contains metal nanoparticles, solvent and dispersing agent, organic dielectric material or organic semiconductor material. The metal nanoparticles contain silver, copper and/or aluminum.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The organic semiconductor material is obtained by dissolving poly-3-hexylthiophene in chloroform. The organic dielectric material contains liquid of polyvinyl alcohol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The inorganic layer contains oxide and/or nitride of aluminum and/or silicon.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The polymeric composition further contains acidic monomer. Preferred Properties: The number of (meth)acryloyloxy groups of the (meth)acrylate is 3-5, preferably 4. The viscosity before hardening the (meth)acrylate is 1000 mPa.second or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electroactive materials further comprise slurry (50-70 wt.%) containing binder and solvent. The organic particles are ceramic particles, chosen from barium titanate, hafnium oxide, strontium titanate, titanium dioxide, silicon dioxide, aluminum trioxide, tin dioxide, cesium dioxide, magnesium oxide, calcium oxide, yttrium trioxide, and calcium carbonate. Preferred Property: The nanofiber structure has diameter of 100-200 nm, and porosity of 40-90%.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The separator comprises polyvinyl alcohol containing organic particles embedded in nanofiber structure. The heated rollers comprise copper, aluminum alloy, nylon, polyvinylidene fluoride, or ethylene chlorotrifluoroethane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The paste is passed through the opening of the mesh, and is discharged onto a pattern surface of a silicon substrate.
TECHNOLOGY FOCUS - METALLURGY - The separation preventing layer has, as main component, at least one kind of oxide of metal selected from group consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium, and yttrium. The insulating layer is made of silicon oxide, aluminum oxide, zirconium oxide, tantalum oxide, magnesium oxide, calcium fluoride, or magnesium fluoride. The second electrode layer includes a layer having, as main component, at least one kind of metal selected from the group consisting of molybdenum, zirconium, hafnium, titanium, aluminum, tantalum, and vanadium. The first electrode layer includes, as main component, palladium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameters: Average diameter of microparticles that hold free electron is 5-500 nm. Preferred Components: Microcrystal thin film semiconductor layer which comprises p layer, i layer, and n layer, or mixed layer of microcrystal semiconductor and amorphous semiconductor is microcrystal silicon layer or mixed layer of microcrystal silicon and amorphous silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Microparticle that holds free electron is metal microparticle e.g. palladium (Pd), silver (Ag), aluminum (Al), or gold (Au) or microparticle of hexaboride represented by XB6, wherein X is yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), strontium (Sr), or calcium (Ca). Microcrystal thin film semiconductor layer which comprises p layer, i layer, and n layer or mixed layer of microcrystal semiconductor and amorphous semiconductor is microcrystal silicon layer or mixed layer of microcrystal silicon and amorphous silicon. Preferred Parameters: Average diameter of microparticles is 5-500 nm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Dispersion liquid with microparticles contains ethanol, methanol, and/or isopropyl alcohol as solvent.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compound: The material having thermal expansion coefficient less that of silver is molybdenum, tungsten, chromium, vanadium, niobium or tantalum.
TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The methacrylic resin film is molded using a die having openness of 0.2-0.5 mm, at 210-270 degrees C by melt-extrusion T-die method.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The interval of the plasma torch and molten silicon is 1/2 or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The spacer tube is made of molybdenum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preparation: No preparation method is given. Preferred Components: The organic layer is an emissive layer and the compound is an emissive dopant. The organic layer further comprises a host. SPECIFIC COMPOUNDS - 34 Compounds (I) are specifically claimed e.g. ruthenium carbene complexes of formulae ((A)-(E)).    EXAMPLE - Zinc dust (2.339 g), 2-(phenylamino)benzenethiol (12 g) and formic acid (100 ml) were added in flask (250 ml). The reaction mixture was refluxed under nitrogen for 6 hours. The reaction mixture was filtered off to remove insoluble material. Perchloric acid (35.9 ml) was added to the filtrate and stirred for 20 minutes. Water (200 ml) was added and the precipitation was collected. The precipitate was washed with water and ether to obtain 3-phenyl-benzothiazol-3-ium perchlorate (a). Copper chloride (3.9 g), lithium tert-butoxide (3.15 g) and anhydrous tetrahydrafuran (400 ml) were added in a flask (500 ml). The reaction mixture was stirred inside a glove box over night. Subsequently, the obtained (a) (2.31 g) was added to the reaction mixture and stirred over night. The reaction mixture was removed from the glove box and filtered. The filtrate was concentrated to dryness and re-suspended in dichloromethane. The suspension was filtered and the filtrate was concentrated to dryness to substituted 3-phenyl-2,3-dihydro-benzothiazole compound of formula (a1). The obtained (a1) (1 g) was mixed with ruthenium dichloride(dimethyl sulfate (DMSO) 4) (0.777 g) in 2-ethoxyethanol. The reaction mixture was vacuum evacuated and back filled with nitrogen three times. The reaction mixture was heated to reflux for 1 hour. The reaction mixture was evaporated to dryness under vacuum. The residue was purified to give ruthenium carbene complexe of formula (II).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No preparation method is given. Preferred Components: A substituted dibenzonaphtacene derivative of formula (II) is also used. (I) or (II) comprises substituted dibenzonaphtacene derivatives of formulae (III)-(XII).X = CR2 or N, where at least one X is CR2;Z = substitutent comprising optionally (hetero)aromatic rings or ring systems with 5-60 ring atoms; andn, m = 0-4.Provided that: T is equal to CR1, during n-times the occurrence of six-membered ring (n) and the n six-membered rings replace R1 by CR1, and U1 is equal CR1, during m-times the occurrence of six-membered ring (m), and m six-membered ring replace R1 by CR1. SPECIFIC COMPOUNDS - 105 Compounds (I) are disclosed, e.g. 6,6'-(4,4'-(5,6,11,12,13,14-hexaphenyldibenzo(fg,op)tetracene-4,7-diyl)bis(4,1-phenylene))bis(2,4-diphenyl-1,3,5-triazine) (Ia), 9,9'-(3,3'-(5,6,11,12,13,14-hexaphenyldibenzo(fg,op)tetracene-4,7-diyl)bis(3,1-phenylene))bis(9H-carbazole), 4,4'-(5,6,11,12,13,14-hexaphenyldibenzo(fg,op)tetracene-4,7-diyl)bis(N,N-diphenylaniline), 4-(5,6,7,11,12,13,14-heptaphenyldibenzo(fg,op)tetracen-4-yl)-N,N-diphenylaniline and 4-(3-(4,6,7,11,12,13,14-heptaphenyldibenzo(fg,op)tetracen-5-yl)phenyl)-2,6-diphenylpyridine.    EXAMPLE - 5,12-Bis(3-bromophenyl)-4,7,11,14-tetraphenyldibenzo(fg,op)tetracene (IX) (16.05 g) and 2-chloro-4,6-diphenyl-1,3,5-triazine (9.42 g) were suspended in p-xylene (387 ml). Then sodium tert-butoxide (4.56 g) was added to this suspension and palladium(II) acetate (93.61 mg) and tri-tert-butylphosphine (0.94 ml) were added. The reaction mixture was heated for 20 hours under reflux, and cooled. The organic phase was separated, washed several times with water, dried with sodium sulfate and then concentrated to obtain 9,9'-(3,3'-(4,7,11,14-tetraphenyldibenzo(fg,op)tetracene-5,12-diyl)bis(3,1-phenylene))bis(2-phenyl-9H-carbazole).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass frit (A) further contains silica and boron oxide. The glass frit (A) and glass frit (B) contain (in wt.%) lead oxide (71.8-90), silica (4.9-12), boron oxide (4.9-11), alumina (0-5), zinc oxide (0.5-5), titania (0-5), strontium oxide (0-5), barium oxide (0-5), zirconia (0-5), ferric oxide (0.3-0.5), chromium oxide (0.2-0.3), cobalt (III) oxide (0.1-0.4) and manganese oxide (0.3-0.5). The glass frit (B) is lead oxide-silica-boron oxide-type glass frit containing silver oxide (AgO or Ag2O), calcium carbonate and/or barium carbonate. The total content of silver oxide, calcium carbonate and/or barium carbonate in glass frit (B) is 0.1-3 wt.%. The content of each glass frit (A) and glass frit (B) in the glass frit, is 40-60 wt.%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The silicon chip is processed with mixed solution containing acetic acid and deionized water before forming the nano array structure.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The stainless steel foil substrate is a flexible stainless steel foil with model number of SUS304 (steel use stainless 304) or SUS430 (steel use stainless 430). The bottom electrode is a double-layer molybdenum film. The gate electrode is nickel/aluminum grid electrode. The absorbing layer is indium-gallium-selenium film. The buffer layer is cadmium sulfide thin film. The intrinsic zinc oxide layer is zinc oxide thin film. The aluminum-doped zinc oxide layer is aluminum-doped zinc oxide film. The flexible stainless steel substrate indium-gallium-selenium film battery manufacturing method enables utilizing evaporation source as boron nitride crucible molybdenum wire. Preferred Composition: The flexible stainless steel substrate indium-gallium-selenium film battery manufacturing method enables utilizing sputtering gas as argon gas or argon-oxygen mixed gas having argon and oxygen at volume ratio of 1:0.25-1.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The alcohol in the potassium hydroxide-alcohol solution or sodium hydroxide-alcohol solution is ethylene glycol, glycerin or propylene glycol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal atoms comprise copper. The atomic layer of metal atoms is on a noble metal core. Preferred Method: The hindering process is performed using a surfactant including citric acid, ethylenediamine tetraacetic acid (EDTA) or its mixture, where the surfactant is in solution with an acid and a platinum salt. The hindering process is performed by forming a coordination complex between a surfactant and at least one of the metal atoms and platinum atoms. The method further involves depositing the atomic layer of metal atoms onto the metal core using under potential deposition (UPD). The treating of the particle with the solution involves mixing the particle with the solution. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of silica particles (I) silica particles (II) is 5-95 parts mass, each with respect to 100 parts mass of silica particles (a).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The (meth)allyl compound (c) is of formula: Y'-(C(=O)-O-CH2-C(-R6)=CH2)e. The content of (meth)allyl compound (c) and (meth)acrylate compound (b) with respect to 100 parts mass of silica particles (a) before surface treatment is 5-200 parts mass and 20-500 parts mass, respectively. The content of polymerization initiators (d) is 0.01-10 %mass with respect to 100 %mass of curable composition. The (meth)acrylate compound (b) is (meth)acrylate compound which has three or more ethylenically unsaturated groups, and does not have ring structure, or (meth)acrylate compound which has two ethylenically unsaturated groups and has a fluorene structure.e=2-4;R6=H or methyl;andY'=6-18C organic residue which has aromatic ring structure.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The glass transition temperature of the homopolymer of the (meth)acrylate compound (b) is 80 degrees C or more. The hardened material of the composition has Abbe's number of 50 or less. Preferred Definitions:    R1,R2,R4=methyl;    R3,R5=methyl or ethyl;    a=2 or 3;    b-d=0 or 1;and    X=phenyl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The heat exchanger body comprises aluminum or an aluminum alloy.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The second material consists of aluminum phosphide, aluminum indium phosphide, indium gallium phosphide, aluminum indium gallium phosphide and gallium phosphide. The substrate comprises gallium arsenide and germanium. The first material consists of gallium arsenide, indium gallium phosphide and aluminum indium gallium phosphide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The thermally insulative filler comprises H2Mg3(SiO3)4, CaCO3, Mg(OH)2, Mica, BaO, gamma -AlO(OH), gamma -AlO(OH), Al(OH)3, BaSO4, CaSiO3, ZrO2, SiO2, a glass bead, a glass fiber, MgO.xAl2O3, CaMg(CO3)2, and/or clay (preferably H2Mg3(SiO3)4, and/or CaCO3, Mg(OH)2). The thermally conductive filler comprises AlN, BN, MgSiN2, SiC, graphite, ceramic-coated graphite, expanded graphite, graphene, a carbon fiber, a carbon nanotube, and/or graphitized carbon black (preferably graphite, and/or boron nitride, especially graphite). The thermally conductive filler comprises (vol.%): electrically conductive filler (0-100 vol.%) with a resistivity of less than or equal to 1 Ohm.cm; and/or electrically insulative filler (0-100) with a resistivity of greater than or equal to 105 Ohm.cm. The thermally conductive filler comprises electrically conductive filler with a resistivity of less than or equal to 1 Ohm.cm; and electrically insulative filler with a resistivity of greater than or equal to 105 Ohm.cm.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The thermoplastic polymer comprises a polyamide, polyester, polyethylene and ethylene based copolymer, polypropylene, polyphenylene sulfide, polyetheretherketone, polycarbonate, and/or polyetherimide (preferably polyamide, polyester, polyethylene and ethylene based copolymer, polypropylene, and/or polyphenylene sulfide). EXAMPLE - A composition comprising (vol.%): Valox315 (RTM: polybutylene terephthalate); Finntalc M40 (RTM: talc) (31); and Thermocarb TC300 (RTM: graphite) (13) was prepared. The composition was evaluated for thermal conductivity and volume resistivity, and it was found to be 1.49 W/mK, and greater than 107 Ohm.cm, respectively.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: A solution containing polyisoimide resin is coated to obtain polyisoimide molded product, and obtained molded product is rearranged to obtain polyimide resin molded product. The polyisoimde resin is rearranged in solution of polyisoimide resin, and obtained polyimide resin solution is coated to form polyimide resin molded product. Polyisoimide resin is melted, molded, and polyisoimide resin in obtained molded product is rearranged to obtain polyimide resin molded product.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The modified siloxane polymer is obtained by reacting a siloxane compound of formula (I) and a siloxane compound of formula: -L-Si(-R7)(-R8)-O-(-Si(-R9)(-R10)-O-)m-Si(-R11)(-R12)-L'-. The siloxane polymer having network structure is of formula: (R13SiO3/2)t(R14R15SiO)d(R16R17R18SiO1/2)m'.R1-R6=H, halo, and/or 1-10C alkyl, 3-20C cycloalkyl, 6-20C aryl, 7-20C arylalkyl, 1-20C heteroalkyl, 2-20C heterocycloalkyl, 2-20C alkenyl, 2-20C alkynyl, or 1-10C alkoxy (all optionally substituted), with at least two being H;n=0-10;L,L'=single bond, halo, and/or 1-8C alkylene, preferably singe bond, methylene, ethylene, propylene, butylene, or pentylene;R7-R18=halo, and/or 1-10C alkyl, 3-20C cycloalkyl, 6-20C aryl, 7-20C arylalkyl, 1-20C heteroalkyl, 2-20C heterocycloalkyl, 2-20C alkenyl, 2-20C alkynyl, or 1-10C alkoxy (all optionally substituted), with at least one of R16-R18 preferably being alkenyl;m=0-500;t,m'=greater than 0;d=0 or more;andt+m'+d=1.An average of one or more cyclosiloxane portions are contained in 1 molecule of modified siloxane polymer. The number average molecular weight of modified siloxane polymer is 500-30000. The content of modified siloxane polymer is 5-95 %mass. The composition further contains a curing agent having two or more hydrogen-silicon bonds, and a hydrosilylation catalyst.
TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The resin is chosen from acrylic resin, epoxy resin or modified silicone resin. The amount of inorganic oxide particles is 1-90 weight%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): The preparation of (I)-(III), comprises (a) carrying out coupling reaction between pyrrole nitrogen atom and an aryl or heteroaryl group; and (b) carrying out ring-closure reaction between pyrrole ring and the aryl or heteroaryl group that is coupled in step (a). Preferred Definitions:    R1, R2 = pyridinyl, pyrimidinyl, pyridazinyl, pyrazinyl, triazinyl, benzimidazolyl, naphthyl, anthracenyl, phenanthrenyl, benzanthracenyl, pyrenyl, biphenyl, terphenyl or quaterphenyl (all optionally substituted by at least one group R3).    SPECIFIC COMPOUNDS - 168 Compounds (I) are disclosed e.g. 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-13,13-dimethyl-1,9-diazapentacyclo(10.7.0.0(2,10).0(3,8).0(14,19))nonadeca-2(10),3,5,7,11,14(19),15,17-octaene of formula (Ia), 9-(4,6-diphenylpyrimidin-2-yl)-13,13-dimethyl-1,9-diazapentacyclo(10.7.0.0(2,10).0(3,8).0(14,19))nonadeca-2(10),3,5,7,11,14(19),15,17-octaene, 13,13-dimethyl-9-(pyridin-2-yl)-1,9-diazapentacyclo(10.7.0.0(2,10).0(3,8).0(14,19))nonadeca-2(10),3,5,7,11,14(19),15,17-octaene, 9-(4,6-bis(pyridin-2-yl)pyrimidin-2-yl)-13,13-dimethyl-1,9-diazapentacyclo(10.7.0.0(2,10).0(3,8).0(14,19))nonadeca-2(10),3,5,7,11,14(19),15,17-octaene and 9-(2,6-bis(pyridin-2-yl)pyridin-4-yl)-13,13-dimethyl-1,9-diazapentacyclo(10.7.0.0(2,10).0(3,8).0(14,19))nonadeca-2(10),3,5,7,11,14(19),15,17-octaene.    EXAMPLE - 19,19-Dimethyl-3,12-diazapentacyclo(10.7.0.0(2,10).0(4,9).0(13,18))nonadeca-1,4,6,8,10,13(18),14,16-octaene (68 g) was dissolved in dimethylformamide (1000 ml) under inert atmosphere and then mixed with 60% sodium hydride (13.8 g) in mineral oil (345 mmol). After 1 hour a solution of 2-chloro-4,6-diphenyl-(1,3,5)triazine (73 g) in tetrahydrofuran (1000 ml) was added dropwise at room temperature. Then the reaction mixture was stirred for 12 hours at room temperature. Then the reaction mixture was worked up to obtain (Ia).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Alcohol is methanol, ethanol, or glycol. Phenol is phenol or naphthol. Organic acid is formic acid or acetic acid. Preferred Processes: Reaction medium is not added to backflow reaction, solvent is removed by direct evaporation of solution. Reaction medium is added to backflow reaction, lower liquid is separated via liquid separation method, and lower liquid is fetched to evaporate to remove reaction medium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The mask of the battery is coated with carbitol, propylene glycol methyl ether acetate, ethylene glycol ethyl ether, ethylene glycol monobutyl ether acetate, petroleum ether, turpentine oil or terpineol.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - preparation (claimed): A tin compound of formula (II) and tin chloride, or boron compound of formula (III) are reacted in presence of bromide/iron bromide and N-bromosuccinimide, to obtain tin-centered dendrimer compound. Preferred Composition: The tin-centered dendrimer compound is preferably tetrakis(4-(4'-(1-naphthyl)biphenyl))tin, tetrakis(p-quaterphenyl)tin, tetrakis(4-(4'-(2-thiophenyl)biphenyl))tin, tetrakis(4-(4'-(2-pyridinyl)biphenyl))tin, tetrakis(4-(9-anthracenyl)phenyl)tin, tetrakis(4-(10-methyl-9-anthracenyl)phenyl), tetrakis(4-(10-phenyl-9-anthracenyl)phenyl), tetrakis(4-(10-(1-naphthyl)-9-anthracenyl)phenyl)tin, tetrakis(4-(10-(2-naphthyl)-9-anthracenyl)phenyl)tin, tetrakis(4-(4'-(9-anthracenyl)biphenyl))tin, tetrakis(4-(4'-(9-(10-methylanthracenyl))biphenyl))tin, tetrakis(4-(4'-(9-(10-phenylanthracenyl))biphenyl))tin, tetrakis(4-(4'-(9-(10-(2-naphthyl)anthracenyl))biphenyl))tin, tetrakis(4-(1,2-di-p-tolyl vinyl)phenyl)tin, tetrakis(4-(1-p-tolyl-2-(4-biphenyl)vinyl)phenyl)tin, tetrakis(4-(1-(4-bromophenyl)-2-(p-tolyl)vinyl)phenyl)tin, tetrakis(4-(1-(4-bromophenyl)-2-(1-naphthyl)vinyl)phenyl)tin, tetrakis(4-(1-(4-bromophenyl)-2-(4-biphenyl)vinyl)phenyl)tin, tetrakis(4-(1-(p-methylmercaptophenyl)-2-(p-tolyl)-vinyl)phenyl)tin, tetrakis(4-(1-(p-methylmercaptophenyl)-2-(1-naphthyl)vinyl)phenyl)tin, tetrakis(4-(1-(p-methylmercaptophenyl)-2-(4-biphenyl)vinyl)phenyl)tin, tetrakis(4-(2-(2-naphthyl)-2-(p-tolyl)vinyl)phenyl)tin, tetrakis(4-(1-(2-naphthyl)-2-(1-naphthyl)vinyl)phenyl)tin, tetrakis(4-(1-(2-naphthyl)-2-(4-biphenyl)vinyl)phenyl)tin, tetrakis(4-(1-(4-biphenyl)-2-(p-tolyl)vinyl)phenyl)tin, tetrakis(4-(1-(4-biphenyl)-2-vinyl)phenyl)tin and tetrakis(4-(1,2-di-(4-biphenyl)vinyl)phenyl)tin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The solid-metal oxide is nanometer level having a proton conducting capable of filling and absorbing-metal oxide, and is compound or composition of more than two of sulfonated SiO2, TiO2, Al2O3, WO3, WO3-ZrO2, SiO2-Al2O3-, TiO2-Al2O3, SiO2-TiO2 or MoO3.    TECHNOLOGY FOCUS - POLYMERS - The solid polymer electrolyte is capable of conducting proton, and is sulfonated polymer. The solid polymer electrolyte membrane is based on the sulfonated polymer composite film. The sulfonated polymer is aryl sulfonic acid, sulfonic acid imine, polyether sulfonic acid, alum acid, imidazole sulfonic acid, phosphoric acid or nitrile silicone alkyl sulfonic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: A gaseous chlorine compound comprising dichloroethylene, trichloroethylene, dichloroethane, trichloroethane and/or hydrogen chloride is added to gas. The center opening treatment is carried out in presence of nitrogen-carrier gas or oxygen admixture containing dichloroethylene. The oxide layer is treated with water vapor.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The core particles have diameter of 2-10 nm. Preferred Composition: The concentration of copper ion in acidic aqueous solution is 1 mM to less than saturation concentration.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The glass frits (A) and (B) have softening point of 510-570 degrees C, and 530-680 degrees C, respectively. Preferred Composition: The glass frit (A) contains (in mol%) of bismuth(III) oxide (20-40, preferably 5-30), barium oxide (5-20 or 5-25) and 5 mol.% or less of alumina. The glass frits (A) and (B) contains bismuth and/or barium.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electroconductive paste further contains zinc oxide. The electroconductive powder is silver powder.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The difference of solubility parameter value with metal colloid of nonaqueous solvent is 9 MPa1/2 or more. Preferred Components: The nonaqueous solvent has dielectric constant which is less than the amphiphilic solvent. The metal particles contain gold, silver, copper, aluminum and platinum. The organic ion is quaternary ammonium salt poorly soluble or insoluble in water, phosphonium salt, fluorescent cationic dye, or oxonium salt. The layered compound is layered clay compound containing montmorillonite mineral group or mica group. The layered compound-metal particle composite suspension further contains organic pigment, hole transporting substance, p-type semiconductivity substance, electron transport substance, n-type semiconductivity substance and crosslinked substance. The electron acceptor photoreduced with pigment is added to the insulating layer, and dielectric layer. The layered compound-metal particle composite multilayer function film is laminated on the one side of the insulating layer containing platinum as metal particle. The layered compound-metal particle composite multilayer function film is laminated on the other insulating layer side containing gold, silver, copper and aluminum as metal particle. The content of metal particle, electroconductivity, plasmon resonance property, degree of aggregation and optical absorption feature are controlled.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The Vickers hardness (Hv) of edging portion of wafer is 1.2-5 times the Vickers hardness of center portion. The crystal grain diameter of edging portion of wafer is 5 mm or less. The Vickers hardness of edging portion of wafer is 1100 Hv or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Salt: The metal halide salt comprises Zn (II) chloride and tin (II) chloride. The element (A) is copper. The element (B) is zinc. The element (C) is tin. The element (D) is sulfur. The semiconductor film comprises a copper zinc tin sulfur or copper zinc tin sulfur selenide film. The combining process further involves copper (II) acetate, zinc (II) chloride, tin (II) chloride, and thiourea in the liquid solvent, and combining a precursor having copper in a +2 oxidation state into the solution. The metal halide salt includes an element in a +2 oxidation state, preferably tin.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Solvent: The solvent comprises a polar solvent or non-toxic solvent. The solvent is chosen from dimethyl sulfoxide, dimethylformamide, dichloromethane, tetrahydrofuran, ethyl acetate, propyl acetate, or other acetate, acetone, methyl ethyl ketone, methyl amyl ketone, or other ketone, acetonitrile, polar aprotic solvent, ethanol, n-propanol, i-propanol, terpineol, or other alcohol, ethylene glycol, propylene glycol, or other diol, phenol, cresol, or other phenolic solvent. The solution includes a co-solvent chosen from monoethanolamine, diethanolamine, triethanolamine, monoethylamine, diethylamine, triethylamine, pyridine, or other amine, hexane thiol, or other thiol, ethane dithiol, hexane dithiol, or other dithiol, diethyl ether, or other ether.
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The magnetic steel sheet contains (in %mass) silicon (less than 7), aluminum (less than 5), manganese (less than 3), sulfur (0.01 or less), nitrogen (0.005 or less) and oxygen (0.01 or less) and remainder of iron and unavoidable impurities. The laser is irradiated at interval of 0.2-5 mm to the back yoke portion.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The resin containing structural unit having hydroxyl group is of formula: -(CH2-C(-R1)(-Q1-A1-OH))m- (I).R1=H or methyl;Q1=-C(=O)O- or -C(=O)NRa-;A1=optionally substituted alkylene or -(CH2CHRbO)x-(CH2CHRb)-;Ra,Rb=H or alkyl;x=1-100;andm=5-100.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The pH value and zeta potential of dispersion liquid is adjusted by adding nitric acid and/or ammonia. The water contact angle of dispersion liquid is adjusted by performing corona treatment or plasma processing. Preferred Property: The bundle of carbon nanotube in carbon nanotube content layer has diameter of 1-4 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The molybdenum-sodium complex oxide contains sodium molybdate. The sodium containing region consists of metal sodium, sodium oxide or sodium molybdate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Film: The oxide film is molybdenum oxide film. Preferred Composition: The metal back-surface electrode layer contains molybdenum. The p-type copper-zinc-tin-sulfur or selenium light-absorption layer contains copper-zinc-tin sulfide (Cu2ZnSnS4), copper-zinc-tin selenide (Cu2ZnSnSe4) or copper-zinc-tin-sulfur selenide (Cu2ZnSn(S,Se)4).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The amorphous layer is made from silicon, silicon-germanium, silicon carbide, silicon monoxide, silicon oxynitride, silicon carbon nitride, silicon nitride, silicon germanium oxide, silicon-germanium nitride and silicon-germanium carbide.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polymerizable resin composition contains unsaturated compound containing unsaturated group of formula: -R4-CR5=CH2 or -CR5=CH2, in a molecule. The unsaturated compound and silicone resin are subjected to radical copolymerization. The weight ratio of unsaturated compound and silicone resin is 10-90:90-10. The molded product is film or sheet.R4=alkylene, alkylidene, or -OCO-;andR5=H or alkyl.Preferred Property: The diameter of synthetic fiber is less than the wavelength of visible light.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The zinc-oxide-type transparent-conductive-film forming material contains zinc oxide as main component and titanium black. The ratio of number-of-atoms of titanium black with respect to total number of metal atoms is more than 2 to 10. Preferred Property: The relative density of the oxide sinter is 93% or more. Preferred Condition: The zinc-oxide-type transparent-conductive-film forming material is manufactured under inner atmosphere or reducing atmosphere chosen from at least one of nitrogen, argon, helium, carbon dioxide, vacuum and hydrogen.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The chlorosulfonyl compound (I) is obtained by reacting ammonia and amino group-containing compound of formula: Cl-S(=O)2-NH-S(=O)2-R1 or its salt. The ammonium salt (II) is reacted with tertiary amine compound or hydroxide of alkali metal.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of catalyst and activator in solution is 0.1-4 wt.% and 0.05-3 wt.%, respectively. The catalyst is metallocene, and activator is thiophene. The contraction bath tub comprises organic solvent chosen from water, alcohol, dimethyl sulfoxide and acetone, and polyvinyl alcohol or poly acrylonitrile solution. Preferred Property: The carbon nanotube fiber has diameter of 1-100 mu m and tensile strength of 4-40 g/d.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The p-type semiconductor layer is selected from the crystal silicon, amorphous silicon or amorphous silicon carbide. The substrate is selected from quartz, glass, ceramics or stainless steel.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The ytterbium (Yb) element is doped in substituted erbium compound of formula Er3+:YbnY1-nAlO3, where n is 0.05-0.25 or Er3+:YbnY3-nAl5O12, where n is 0.15-0.75. The boron, gallium or indium element is doped in a substituted erbium compound of formula Er3+:YMzAl1-zO3, where M is boron, gallium and/or indium and z is 0.1-0.5 or Er3+:Y3MzAl5-zO12, where M is boron, gallium and/or indium and z is 0.5-2.5. The nitrogen (N) and/or fluorine (F) element is doped in the substituted erbium compound of formula Er3+:YAlNxFyO3-x-y, where x is 0.010.05 or Er3+:Y3Al5NxFyO12-x-y, where x is 0.04-0.20 and y is 0.04-0.20. The boron, gallium or indium element is doped in the substituted erbium compound of formula Er3+:YbY1-nMzAl1-zO3, where M is boron, gallium and/or indium, n is 0.05-0.25 and z is 0.1-0.5 or Er3+:YbnY3-nMzAl5-zO12, where M is boron, gallium and/or indium, n is 0.15-0.75 and z is 0.5-2.5. The nitrogen and/or fluorine element is doped in the substituted erbium compound of formula Er3+:YbnY1-nAlNxFyO3-x-y, where n is 0.05-0.25 and x is 0.01-0.05 or Er3+:YbnY3-nAl5NxFyO12-x-y, where n is 0.15-0.75, x is 0.04-0.20 and y is 0.04-0.20. The nitrogen and/or fluorine element is doped in the substituted erbium compound of formula Er3+:YbnY1-nMzAl1-zNxFyO3-x-y, where M is boron, gallium and/or indium, n is 0.05-0.25, x is 0.01-0.05, y is 0.01-0.05 and z is 0.1-0.5 or Er3+:YbnY3-nMzAl5-zNxFyO12-x-y, where M is boron, indium and/or gallium, n is 0.15-0.75, x is 0.04-0.20, y is 0.04-0.20 and z is 0.5-2.5.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The material consisting of zinc oxide is formed as a base material. The transparent conductive film contains hydrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic compound consists of vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic compound consists of an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, a high molecular compound, and a heterocyclic compound having a dibenzofuran skeleton or a dibenzothiophene skeleton.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The graded interlayer has tertiary band gap, and contains indium-gallium-aluminum arsenide ((InxGa1-x)yAl1-yAs, where x and y are such that the third band gap of interlayer is greater than secondary band gap). The graded interlayer contains arsenic, nitrogen, antimony-based group III-V compound semiconductors. The primary substrate contains gallium arsenide or germanium. The surrogate substrate contains sapphire, gallium arsenide, germanium or silicon. The solar subcell (a) contains indium-gallium phosphide emitter layer and indium-gallium phosphide base layer. The solar subcell (b) contains indium-gallium phosphide emitter layer and gallium-arsenide base layer. The solar subcell (c) contains indium-gallium-arsenic phosphide emitter layer and indium-gallium-arsenic phosphide base layer. The solar subcell (d) contains indium-gallium arsenide base layer and indium-gallium arsenide emitter layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The cell includes a spacer comprising a material selected from one of aluminum oxide, silicon oxide, titanium oxide, magnesium oxide, cerium oxide, aluminum nitride, silicon nitride, aluminum oxynitride, silicon oxynitride and titanium oxynitride.    TECHNOLOGY FOCUS - METALLURGY - The cell includes a reflective layer comprising one of aluminum, gold, platinum, silver and copper.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The inorganic compound is selected from vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The organic compound is selected from aromatic amine compound, carbazole derivative, aromatic hydrocarbon, high molecular compound, and heterocyclic compound having dibenzofuran skeleton or dibenzothiophene skeleton.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic thin film layer contains alumina, and has thickness of 10-200 nm.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The adhesion layer has elastic modulus of 1x 10-2 MPa to 1 MPa. The thickness of the inorganic thin film is 10-200 nm. Preferred Composition: The laminate material further has a transparent conductive thin film provided on the surface opposite to the surface in which the adhesive layer is formed and a hard-coat layer provided on the surface opposite to the surface in which the inorganic thin film.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: Alternately, the polyaniline composition comprises a bivalent block-forming isocyanate compound in which a compound of formula: OCN-X-NCO is formed into blocks, instead of the silicone type compound.X=bivalent optionally substituted hydrocarbyl.The phenolic compound has one phenolic hydroxyl group. The composition further contains an organic acid having sulfonic acid group(s) as heat-resistant stabilizer.    TECHNOLOGY FOCUS - POLYMERS - Preferred Compounds: The silicone type compound has a repeating unit of formula (I), and structures of formulae (II,III) at both ends. The silicone type compound has a weight average molecular weight of 100000 or less. The content of silicone type compound is 0.01-100 wt.% with respect to the polyaniline composite. The polyaniline molecule is an unsubstituted molecule. The proton donor is of formula: M(X'ARn)m', preferably of formula: M(O3S-CH(-COOR113)(-CH2-COOR112))m'. The polyaniline compound is dissolved in the composition.R1,R5-R8,R12=H or optionally substituted hydrocarbyl, with the content of component in which R1, R5-R8 and R12 are optionally substituted aryl being 90% or less;R2-R4,R9-R11=H, alkyl or alkoxyalkyl;l,m=0 or more;l+m=0-3;n=1 or more;M=H, organic free radical, or inorganic free radical;m=valence of M/valence of X';X'=anion group;A=optionally substituted hydrocarbyl;R=-H, -R101, -OR101, -COR101, -COOR101, -(C=O)-(COR101), or -(C=O)-(COOR101);R101=optionally substituted hydrocarbyl, silyl, alkylsilyl, -(R102O)x-R103, or -(OSi(R103)2)x-OR103;R102=alkylene;R103=hydrocarbyl;x,r=1 or more;m'=valence of M;R112,R113=hydrocarbyl or -(R114O)r-R115;R114=hydrocarbyl or silylene;R115=H, hydrocarbyl, or (R116)3Si-;andR116=hydrocarbyl.
TECHNOLOGY FOCUS - METALLURGY - The sublimable vapor deposition material is selected from Zinc oxide (ZnO), Calcium Oxide (CaO), Magnesium oxide (MgO), Tin oxide (SnO2) and Cerium Oxide Powder (CeO2).The meltable vapor deposition material is selected from silicon dioxide (SiO2), Aluminium oxide ( Al2O3) and Titanium dioxide (TiO2).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The method enables providing a subcell composed of an gallium indium phosphate, gallium arsenide, gallium indium arsenide, gallium arsenide antimonide and gallium indium arsenic nitride emitter region and an gallium arsenide, gallium indium arsenide, gallium arsenide antimonide and gallium indium arsenic nitride base region, and another subcell composed of indium gallium arsenide base and emitter regions.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - The cartridge-based system is operable to receive replaceable cartridges for providing reactants for the extraction chemical process, where the replaceable cartridges includes reactants comprising at least one of aluminum, calcium, magnesium, sodium, potassium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The reducing agent is hydrogen iodide, hydrogen chloride or hydrogen bromide. Preferred Process: The reaction is performed at -20 degrees C or more, preferably -20 degrees C to 120 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: When the peak height based on 1s-3d electron transition appearing in the low energy side of K absorption in the X-ray absorption near edge structure of the iron obtained by X-ray absorption analysis, is 1, the peak height of the complex oxide is less than 0.047. The number of iron ions existing per unit surface area of the titanium oxide is 0-1 (excluding 0 and 1) per nm2.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The organophosphorus compound is a phosphoric acid ester compound of formula (I).Q1-Q4=1-6C alkyl;R1,R2=methyl;n=1 or more;n1,n2=0-2;andm1-m4=0-3.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The resin composition has a bending elastic modulus of 1800-3000 MPa, preferably 2000-3000 MPa. The retention of Charpy impact strength at 23 degrees C after leaving the resin composition at 120 degrees C for 500 hours is 60% or more with respect to that at 23 degrees C. The Charpy impact strength of the resin composition at 23 degrees C after leaving in an environment of 120 degrees C for 500 hours is 7 kJ/m2 or more. Preferred Composition: The resin composition further comprises thermostabilizer (0.01-3), and UV absorber and/or optical stabilizer (0.01-3). Preferred Conditions: The temperature of molten resin composition during extrusion from die exit of extruder is 350 degrees C or less. The structure of extruder has a front stage and a back stage from the upstream. When the barrel full length of the extruder is set to 100%, the range of front stage is 40% or more and the range of back stage is 60% or less. The barrel temperature in front stage is below the glass transition point of polyphenylene ether. The barrel temperature of back stage is 240-320 degrees C. The screw structure of the front stage consists of a sequential feeding (right-hand thread) screw element and a sequential feeding (45 degrees or less) kneading disc element. The screw structure of the back stage consists of two or more of rectangular (90 degrees ) kneading disc element, backward feeding (45 degrees or less) kneading disc element, and backward feeding (left-hand thread) screw element. The styrene resin is supplied from the back-stage barrel.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The evaporation source material contains 5-100 parts mass of electroconductive material with respect to 100 parts mass of silicon oxide. The electroconductive materials are zinc oxide and/or tin oxide, and metal nitride and metal oxynitride.    TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The glass transition temperature of polyester base material is 100 degrees C or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The ozone water has ozone concentration of 10-60 ppm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Metal-type nanowire is silver nanowire.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: Protective layer contains nitrogen (N), sulfur (S), phosphorus (P), metallic element, metal ion, and/or functional group. Electrically conductive laminated body contains photopolymerization initiator having greater than or equal to 20 value of maximum absorption wavelength difference in protective layer. Electrically conductive laminated body contains electrically conductive region and non-electroconductive region which are divided after processing.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The first quantum dot comprises a group IIIA element (preferably indium, gallium, or aluminum).
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Composition: The solar panel further contains a panel carrier, in which at least some of the back contacts of the solar cell are coupled to conductors in the solar panel, a field region adjacent to the side (b) of the substrate in predefined pattern, a barrier layer formed onto the side (a) and into the through-holes, an anti-reflective coating formed on the barrier layer on the side (a) of the substrate, via and conductive material formed on the through-holes.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The diffusion-resistant layer has diffusion barrier against metal diffusion. The predefined pattern of selective emitter regions is completely defined on the side (a) on the substrate without extending into the through-holes. The diffusion resistance layer is high-temperature oxide. A boron-rich silicon layer is formed on the selective-emitter region is decomposable by low-temperature oxidation. The barrier layer comprises sublayer (A) and sublayer (B), and prevents acid-catalyzed diffusion of metal during formation of via into the semiconductor substrate, and has thickness of 2-25 mm. The emitter regions comprise selective emitter regions exposed to a side (a) of the substrate and acts as an initial plating base for electroplating conductors. The intermediate electroconductive layer is formed on the selective emitter and extends laterally to the through-holes. The conductive coating is applied in a fluid form, by printing or spraying. The silicon to oxygen content ratio in sublayer (A) is less than the silicon to oxygen content ratio in sublayer (B). The conductive material is applied as a metal paste having acid value of less than 130. Preferred Property: The thickness of the diffusion-resistance layer is 1-30 nm, when measured on the side (a) of the semiconductor substrate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The thickness of silicon nitride layer is 0.2 mm or more.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The mass ratio of silicon nitride powder and thermosetting phenol resin is 10:8-8:10. The thermosetting phenol resin is novolak-type phenol resin. The mold release material contains hexamethylenetetramine as hardening agent. Preferred Layer: The mold release material layer is composite mold release material layer comprising mixed material baking layer and silicon nitride layer formed on mixed material baking layer. Preferred Property: The thickness of mixed material baking layer is 0.5 mm or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The coating is dielectric hydrogen-doped silicon nitride coating or alumina coating derived from absorbate molecules of trimethyl aluminum. The substrate is n-type emitter, silver substrate or p-type semiconductor.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The adsorbate molecules form 2-10 monolayers on the surface. The adsorbate molecules are organometallic chemical vapor-deposited precursor molecules, preferably water, ammonia, hydrogen peroxide, silane alcohol, ether, lactone, lactam, ketone, ester, carboxylic acid, oxirane or their deuterated products.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The liquid medium is water. The oxidizing agent is transition metal salt and/or persulfate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The conjugated double bond conductive polymer has a pyrrole or thiophene ring (preferably, 3,4-ethyl dioxythiophene), as repeating unit. The poly-N-vinylacetonitrile and conjugated double bond conductive polymer doped with anion are dispersed in the liquid medium.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The glass article has ultraviolet-light transmission rate of 2% or less based on ISO9050(1990) and light transmittance of more than 70% at wavelength of 550 nm. Preferred Composition: The content of silicon oxide in ultraviolet-ray shielding film is 50 %mass or more. The ultraviolet-ray shielding film further contains organic compound (b) chosen from polyether compound, polyol compound, polyvinylpyrrolidone and polyvinyl caprolactam, structural unit derived from silane coupling agent or silane coupling agent and indium-tin oxide microparticles.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic compound (a) has 2 or more nitrogen-containing functional group of formula (I) in a molecule, 2 or more hydroxyl-containing functional group of formula (II) in a molecule. The organic compound (a) has structural unit with which two hydroxyl-containing functional groups (II) are bonded by 3C or less alkylene group, and 2,2'-spirobi(benzo(d)1,3-dithia-2-cupracyclopentane) in a molecule. The organic compound (a) is of formula (III).A1-A5=H, hydroxy, linear or branched 1-20C alkyl or group of formula (i), at least one of A1-A5 is group of formula (i);andR1,R2=linear or branched 1-20C alkyl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The conductive layers are made of tin oxide, antimony oxide and zinc oxide.    TECHNOLOGY FOCUS - METALLURGY - The metallic layer is made of silver or alloy.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The volume content of columnar-crystal structure is 95-100%. The average particle diameter of columnar-crystal structure is 0.1-50 mm.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The concentration of copper, nickel or iron in the target is 1000 weight ppm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The sputtering target has bulk resistance of 1 Omega .cm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The second precursor comprises a nitrogen-containing species (preferably nitrogen, ammonia, hydrazine, nitrogen radicals, nitrogen ions, excited neutral species of nitrogen, or active neutral species of nitrogen). The Group III element is selected from boron, aluminum, gallium or indium. The hydrogen-containing species comprises hydrogen, ammonia, hydrazine, hydrogen radicals, hydrogen ions, excited neutral species of hydrogen, active neutral species of hydrogen or a mixture of hydrogen and nitrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electroconductive material is carbonaceous material. The chemical solution is acidic aqueous solution or alkaline aqueous solution, preferably hydrochloric acid aqueous solution, nitric acid aqueous solution, sulfuric acid aqueous solution, aqueous solution of alkali metal hydroxide, and aqueous solution of alkaline-earth metal hydroxide. Preferred Process: The membrane is formed by applying a coating liquid during manufacture of collector.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The collector further contains membrane including electroconductive material, binder comprising polysaccharide, and carboxylic acid or its derivative(s).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The glass frit has thermal expansion coefficient at 30-300 degrees C of 70-110x 10-7/ degrees C and softening point of 450-600 degrees C.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electroconductive paste contains aluminum powder.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass composition contains (in mol%) silica (59-67), aluminum trioxide (5-8), boron trioxide (0-0.3), magnesium oxide (6-10), calcium oxide (6-10), strontium oxide (3-9), barium oxide (2-7), zirconium oxide (0-1), sodium oxide (0-1) and potassium oxide (0-1). The total content of magnesium oxide, calcium oxide, strontium oxide and barium oxide is 24-29%. The sodium oxide and potassium oxide is 0-1.5%.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The glass plate has thickness of 0.5-2 mm, density of 2.6 g/cm3 or less, thermal expansion coefficient at 30-380 degrees C of 85-110asterisk10-7/ degrees C and ( beta )-OH value of 0.25 mm-1 or less.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of titanium oxide is 0-50000 ppm. The content of tin oxide and sulfur trioxide is 50-30000 ppm. The content of cerium oxide and tungsten oxide is 0-10000 ppm. The content of nickel oxide is 0-500 ppm. Preferred Properties: The compressive-stress and depth of compressive-stress layer is 400 MPa or more and 30 mu m or more, respectively.
TECHNOLOGY FOCUS - POLYMERS - The housing side walls and intermediate housing walls are partially made of foam material i.e. polyethylene foam plastic.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent conductive layer is made of doped oxide such as doped zinc oxide or doped tin oxide. The conductive interlayer is made of conductive oxide or nitride. The back contact is made of transparent conductive oxide. The semiconductor layers are made of amorphous silicon, proto-crystalline silicon, microcrystalline silicon or silicon germanium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic solvent is N-methyl-2-pyrrolidone. The volume ratio of organic solvent and potassium hydroxide is 1:0.5-1:2. Preferred Property: The size of concavo-convex is 1-5 mu m.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The porphyrin skeleton-containing compound is tetraphenylporphyrin. The metal salt is sulfate. Preferred Process: The method further involves separating metal complex of the compound and water. Preferred Compound: The metal complex of the porphyrin skeleton-containing compound is of formula (II).M=metal.
TECHNOLOGY FOCUS - POLYMERS - Preparation: No general preparation given. Preferred Composition: The condensed polycyclic polymer further has anthracene-containing structural unit of formula: -(Ar1)- (III). The anthracene-containing structural unit (III) is of formula (IV).Ar1=heterocyclyl or aryl (both optionally substituted);R5,R6=H, halo or monovalent group;or R5+R6=ring;Z1=-O-, -S-, -Se-, -Te-, -S(=O)-, -S(=O)2-, -C(-R7)=C(-R8)-, -C(-R9)=N-, Or -N(-R10)-, preferably -S-;R7-R10=H, halo, or monovalent group;andor R7+R8=ring. Preferred Definitions:    X1,X2=sulfur;and    R1,R2=linear, branched or cyclic 1-30C alkylthio.    EXAMPLE - 2,6-Dibromo-3,7-bis(dodecylthio)benzo(1,2-b;4,5-b')dithiophene (in mg) (180), 5,5'-bis(tributyl stannyl)-2,2'-bithiophene (180), tetrakis(triphenylphosphine)palladium(0) (30), toluene (2 mL), and dimethylformamide (2 mL) were mixed under nitrogen atmosphere at 80 degrees C for two days. The solution was added to mixed solution of methanol (100 mL) and hydrochloric acid (10 mL), and stirred. The reaction mixture was suction filtered, washed with hexane and acetone, extracted, reprecipitated by adding and stirring methanol, and further suction filtered, to obtain 3,7-bis(dodecylthio)-2-(thienothienyl)benzo(1,2-b;4,5-b')dithiophene polymer (56) having number average molecular weight of 5600 based on polystyrene conversion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The support is further contacted with aqueous solution of metal precursor comprising ionic compound of the metal. Preferred Composition: The amount of transition interstitial compound is 0.1-10 mu mol per square meter BET surface of the high surface area support. The coverage of active metal is 100% of the surface of the interstitial compound. The interstitial compound is vanadium carbide, molybdenum carbide or tungsten carbide, preferably molybdenum carbide. The metal is platinum, palladium or copper. The high surface area support is carbon or alumina, preferably alumina. The noble metal contained in the catalyst is platinum. The catalyst comprises 0.1-10 mu mol of molybdenum carbide per square meter of the surface area. The ionic compound is cationic noble metal compound or anionic noble metal compound.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The carbon-type substrate further has nanocorrugated structure (b) having larger irregular period than the size of corrugated structure (a). The size of the corrugated structure (b) is more than sub micrometer. The carbon-type substrate is metal-impregnated graphite substrate. The mask particles are deposited by sputtering process (101).
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preferred Compositions: The microorganisms which belong to Ensifer genus are E. adhaerens MY11e strain (NITE P-1019) or E. adhaerens SB2 strain. The gel which has negative electrode substance is a gel manufactured using the gelatinizer chosen from the group which consists of agar, gelatin and gellan gum.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compositions: The nutrient is a nutrient containing carbon, nitrogen, hydrogen, oxygen, phosphorus, sulfur, potassium, magnesium, sodium, calcium, iron, manganese, cobalt, zinc, copper, aluminum, a boron, molybdenum, nickel and tungsten. The electron acceptor is rhodium oxide, platinum oxide, lead oxide or preferably manganese oxide.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Process: The water is decomposed into hydrogen and/or oxygen, and organic substance is decomposed, by irradiating light (4) to the light excitation semiconductor, in the device. The partial reduction or partial oxidation of organic substance is performed in the device. Preferred Arrangement: The light excitation semiconductor is accommodated in light-transmissive cell (7) of device. Preferred Component: The device has fluorescent lamp.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The perovskite-type oxide (I) is preferably of formula: BaZr0.8Sn0.2O3 or BaZr0.8Ge0.2O3. The perovskite-type oxide is single-phase sintered compact having theoretical density of 96% or more. Preferred Property: The diameter of granular lump of the sintered compact is 0.1-45 mu m. Preferred Definitions:    x=more than 0 to 0.5 or less;and    M=Sn, Ge, Si or Pb, preferably Sn or Ge.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The metal complex is supported by electroconductive support.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The ligand is porphyrin compound, phthalocyanine compound or salen compound.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Method: The annealing process is carried out at 490 degrees C.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The 2nd organic molecule is arranged by intermolecular interaction with 1st organic molecule. The 1st and 2nd organic molecules have pi -electron conjugated system. The solution where 1st organic molecule was dissolved is made to contact with the base material to chemically bond 1st molecule on the base material. According to the concentration of the solution where 1st organic molecule was dissolved and contact time, the concentration of 1st organic molecule chemically bonded together on the base material is adjusted. The 2nd organic molecule is introduced on the base material by applying or vapor depositing a solution where 2nd organic molecule was dissolved on the base material. The base material has hydrophilic group. The 1st organic molecule is of formula R-Si(X1)(X2)-X3 (I). The field effect transistor has gate electrode, gate insulating film, source electrode, drain electrode, and organic semiconductor layer. The organic semiconductor layer is provided so that the gate electrode may be opposed through the gate insulating film. The source electrode and drain electrode are provided so that it may connect to the organic semiconductor layer, and are provided on the gate insulating film.R=organic group which has a pi-electron conjugated system; andX1-X3=group from which R detaches by reaction of Si and hydrophilic group..
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The P-type trichlorosilane having purity of 99.9999% or monosilane is used during P-type deposition performed on metal belt that is attached to upper end pillar. The i-type trichlorosilane having purity of 99.9999% and N-type trichlorosilane are used in the reflection barrier layer containing aluminum, iron, copper, calcium, boron, phosphorus, arsenic and unavoidable impurities.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: An organic seed layer is formed on substrate, and the organic seed layer are grown to form oxide nanostructures. Preferred Composition: The oxide nanostructures comprises zinc oxide nanowires.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The impurity atom is unequal or non-compensatory n-p atom pair combination chosen from chromium-nitrogen, molybdenum-nitrogen, tungsten-nitrogen, molybdenum-phosphorus, or tungsten-phosphorus.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal is platinum, silver and/or gold. The semiconductor in hot electron-based metal-semiconductor nanodiode solar cell is titanium dioxide, cerium oxide, zinc oxide, silicon, germanium, silicon carbide, cadmium selenide, gallium phosphate, and/or gallium nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The cadmium compound utilized in the method is cadmium acetate, cadmium chloride and/or cadmium nitrate. The sulfide utilized in the method is sodium sulfide and/or ammonium sulfide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent with high boiling point is at least one of N-methylpyrrolidone, N,N-dimethylacetylamide or dimethyl sulfoxide. The organic heat stabilizer is barium stearate or calcium stearate. The aromatic diamine is at least one of 4,4'-diamido-diphenyl ether, p-phenylenediamine and m-phenylenediamine. The aromatic tetracid dihydride is at least one of the benzenetetracarboxylic anhydride, biphenyl tetra formic acid dihydride or benzophenone tetra formic acid dihydride. The organic heat stabilizer is present at 0.5-10 pbw. The aromatic diamine is present at 50-700 pbw. The aromatic tetracid dihydride is present at 100-1400 pbw. The mole ratio of the aromatic diamine and aromatic tetracid dihydride is 1:1. The volume ratio of the acetic anhydride and pyridine in the mixed solvent is 1:1.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The coating amount is 0.2-10 g/cm2, where the drying temperature is 70-150 degrees C and the drying time is 2-10 hours. Preferred Components: The content of the perfluorinated sulfonic acid resin in the perfluorinated sulfonic acid resin solution is 2-40 wt.%. The perfluorinated sulfonic acid resin is obtained by having copolymerization reaction on the sulfo group perfluorinated vinyl ether monomer and tetrafluoroethylene. The perfluorinated sulfonic acid resin is present at 100 parts by weight (pbw).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The base is chosen from sodium hydroxide or potassium hydroxide. The acid is hydrochloric acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The conductive materials and the submicron particles comprise silver. The inorganic components have a bimodal size distribution. The thick film composition further comprises at least one additive containing: (a) a metal including zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, copper, iron, cobalt or chromium; (b) a metal oxide of at least one of the metals including zinc, lead, bismuth, gadolinium, cerium, zirconium, titanium, manganese, tin, ruthenium, copper, iron, cobalt or chromium; and/or any compounds that can generate the metal oxides of (b) upon firing. The inorganic additives comprise zinc oxide. The submicron particles further comprise zinc oxide and an inorganic binder. The device further comprises an insulating film and a semiconductor substrate, where the insulating film comprises at least one component including titanium oxide, silicon nitride of formula (SiNxH), silicon oxide, and silicon oxide/titanium oxide. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The graded layer is located adjacent to the absorber layer, where the back window layer is located between the graded layer and the emitter layer. The p-n junction is located within two depletion lengths of the heterojunction. The material of the emitter layer is aluminum gallium arsenide. The optoelectronic semiconductor device is a single carrier transport solar cell, where a majority of the absorber layer is outside of a depletion region formed by the p-n junction.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The electrolyte is an acetonitrile solution comprising 0.5M lithium iodide, 0.05M iodine and 0.5M 4-tert-butylpyridine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent conductive films are made of indium oxide, zinc oxide, tin oxide or titanium oxide.
TECHNOLOGY FOCUS - METALLURGY - The type of n-type dopant is phosphorus or arsenic. The type of p-type dopant and another type of p-type dopant are selected from one of boron and aluminum. The additional dopant is selected from a group of aluminum, boron, phosphorus and arsenic. The metal contacts are made of a metal selected from a group of aluminum, silver or copper.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Primary components are boron, aluminum, gallium and/or indium. Secondary components are fluorine, chlorine, bromine, and/or iodine. Preferred Process: The zinc-tellurium layer is heated at more than room temperature before implanting primary and secondary components, and annealed.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The conductive layer contains zinc, indium, tin and magnesium. The substrate contains aluminum-indium-gallium nitride (AlxInyGazN, where x is 0-1, y is 0-1 and z is 0-1), gallium phosphide, gallium arsenide, sodium-gadolinium oxide, lithium-gallium oxide, aluminum oxide, magnesium-aluminum oxide, zinc oxide, silicon, silicon carbide, silicon germanium or zirconium diboride. The recesses and projections contain convex portion whose cross-sectional shape is trapezoid (9). Preferred Properties: The surface roughness of the surface on the opposite side to the p-type nitride semiconductor layer side of conductive layer is 0.003-0.005 mu m. The thickness of conductive layer is 0.25-0.5 mu m. The length of top and bottom of trapezoid is 0.3-0.7 mu m. The length of lower base of the trapezoid is 1-1.7 mu m. The height of the trapezoid is 1-1.2 mu m. The surface roughness of the surface having recesses and projections of the p-type nitride semiconductor layer is 0.01-0.02 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electron conductor film comprises zinc oxide and titania. The polysulfide electrolyte includes potassium chloride and sodium fluoride. The sulfur-containing compound of the cathode includes copper sulfide (CuS), copper (I) sulfide (Cu2S), cobalt sulfide (CoS), and cobalt disulfide (CoS2). The coating material of the sulfide compound coated counter-electrode comprises CuS and CoS.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The low surface tension solvent includes methanol.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The solar cell is manufactured by adhering impurity gas e.g. boron trichloride, diborane or phosphine, to the semiconductor layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition (a) further contains inorganic oxide particles having number average particle diameter of 1-100 nm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The component (C) has (meth)acryloyl group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The titanium monoxide (II) microparticles have peak of titanium monoxide (II) in X-ray diffraction pattern. The magnesium metal is in granular form. The molar ratio of titanium dioxide (IV) and magnesium metal is 1.1-10. Preferred Properties: The magnesium metal has particle size of 1-500 mu m. The titanium monoxide (II) microparticles have primary particle diameter of 100 nm to 1 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The thickness of main portion is 1-100 mu m. The metal coating film is coated on both surfaces. The metal catalyst is provided on one or both main surfaces of main portion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The low-refractive index material layer is formed using metal fluoride microparticles, silicon dioxide microparticles or tin oxide microparticles.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The number of repeating units (I) is 1-1000. Preferred Definitions:    R2=-R7-N+(-R9)(-R10)-R8-COO- or -R11-N+(-R12)(-R13)-R14.X-;    R7,R8=1-4C alkyl;    R9,R10=H or 1-4C alkyl;    R12,R13=H or 1-4C alkyl;    R11=1-4C alkylene;    R14=organic group;and    X-=anion.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): Benzoyl chloride is reacted with a hydroxy compound of formula: X-CH2-OH, to obtain compound (I).    TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The resin is polycarbonate resin, polyester resin, or polyarylate resin. Preferred Definitions:    X1-X3=group of formula (i);    R=1-3C alkyl;    a=0-10;and    n,m,l=0-3.    SPECIFIC COMPOUNDS - 14 Compounds (I) are disclosed e.g. benzene-1,3,5-tricarboxylic acid tricyclohexylmethyl ester of formula (IA), benzene-1,3,5-tricarboxylic acid tricyclohexyl ester, benzene-1,3,5-tricarboxylic acid tris-(4-methyl-cyclohexyl) ester, benzene-1,3,5-tricarboxylic acid tris-(2-cyclohexyl-ethyl) ester, and benzene-1,3,5-tricarboxylic acid tris-(3,5-dimethyl-cyclohexyl) ester.    EXAMPLE - (In g) cyclohexane methanol (17.41), triethylamine (16.7), and toluene (25) were stirred at room temperature. A solution obtained by dissolving trimesoyl chloride (13.27) in toluene (50) was dripped and reacted at 90 degrees C. The reaction mixture was cooled to room temperature, neutralized, and water-washed. The organic layer was dried. The solvent was distilled off and recrystallized using isopropyl alcohol. The obtained white powder was dried to obtain benzene-1,3,5-tricarboxylic acid tricyclohexylmethyl ester (16) with a yield of 64.2%. The resin composition obtained by mixing (in parts mass) the obtained compound, chloroform solution (55) of poly(bisphenol A carbonate), and chloroform solution (40) of N,N'-diphenyl-N,N'-di(m-tolyl)benzidine formed a resin having a wear of 0.39/ mu m and excellent gas barrier property.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In forming the Al2O3/SiO2 stack, the silicon containing compound is BDEAS. The method comprises: repeating steps (b) to (d) before the beginning of step (e) until the desired SiO2 layer thickness is obtained; and if necessary, repeating steps (e) to (g) until the desired Al2O3 layer thickness is obtained. The SiO2 layer has a thickness comprised between 1 nm and 15 nm and Al2O3 layer has a thickness of 30 nm. The method comprises: (h) annealing the Al2O3/SiO2 stack issued of step (g) at a temperature of 400-900 degrees C, preferably between 400 degrees C and 425 degrees C, in an atmosphere of nitrogen. The duration of the annealing step (h) is not more than 10 minutes. The silicon containing compound comprises at least 97% of at least one silicon containing compound selected from: BDEAS, BDMAS, BEMAS, DIPAS, DTBAS; and: 200 ppb to 5 ppm of molybdenum, 1000 ppb to 5 ppm of iron, 200 ppb to 5 ppm of copper, 200 ppb to 10 ppm of tantalum. The aluminum containing compound comprises at least 97% of at least one aluminum containing compound selected in the list: Al(Me)3, Al(Et)3, Al(Me)2(OiPr), Al(Me)2(NMe)2 or Al(Me)2(NEt)2. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method comprises: repeating steps of (b)-(d) before the beginning of step (e) until the desired SiO2 layer thickness is obtained; and if necessary, repeating steps of (e)-(g) until the desired Al2O3 layer thickness is obtained. The SiO2 layer has a thickness of 1-15 nm and Al2O3 layer has a thickness of 30 nm. The method comprises (h) annealing the Al2O3/SiO2 stack issued of step (g) at a temperature of 400-900 (preferably 400-425) degrees C, in an atmosphere of nitrogen. The duration of the annealing step of (h) is no more than 10 minutes. Preferred Components: The silicon containing compound is bis(diethylamino)silane. The silicon containing compound comprises at least 97% of the silicon containing compound. The aluminum or silicon containing compound comprises at least 97% of the aluminum or silicon containing compound comprising 200-5 ppm of molybdenum, 1000-5 ppm of iron, 200-5 ppm of copper and 200-10 ppm of tantalum. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of silicon exists in the surface of organic layer which contacts with inorganic layer is 0.25 atomic% or less. The content of silicon in the organic layer is 0.9-2.5 %mass. The group having silicon, is of formula (I) or (II).R1=H or 3C or less alkyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The acrylic resin is of formula (III). The acrylic resin coupled with the inorganic layer, is of formula (IV).R2=R1;andM=constitutent element of inorganic layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The molar concentration of lanthanum nitrate solution is 0.01 mol/l. The lanthanum molybdate nanotube material has an outer diameter of 50-150 nm and wall thickness of 25-50 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preparation (Claimed): The preparation of (I) comprises weighing oxides of strontium, calcium, ytterbium, lithium elements and corresponding salt, fully grinding the materials and uniformly mixing, sintering the powders in air at 500-700 degrees C for 10-14 hours, cooling, crushing, sintering the powders under reduced atmosphere at 800-1000 degrees C for 10-14 hours, crushing after cooling, sintering the powders in air at 1000-1200 degrees C for 20-28 hours, cooling the powders to room temperature, taking out the powders and fully grinding Preferred Components: The reduced atmosphere is hydrogen, carbon, carbon monoxide, or a mixture of nitrogen and hydrogen atmosphere.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The oxide sinter further contains metallic element(s) chosen from titanium, zirconium, hafnium and molybdenum, as additional elements. The atomic ratio of total content of tungsten and molybdenum, with respect to total content of indium, tungsten and molybdenum, in the oxide sinter is 0.003-0.05. The atomic ratio of content of tungsten with respect to total content of indium and tungsten, is preferably 0.003-0.05. The oxide sinter further has crystal grains (C) containing tungstic acid indium compound phase, and crystal grains (D) which does not contain tungsten-oxide phase.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The silicon ingot is a polycrystalline silicon.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The precursor composition used in the manufacture of moist-and-heat-resistance film is aqueous solution containing zinc and/or its compound, and indium and/or its compound. The content of acetic acid in the precursor composition is 5-50 volume%. The precursor composition contains zinc acetate, acetylacetonate salt of indium and indium acetate. The device has semiconductor light absorption layer containing chalcopyrite-type compound semiconductor, kesterite-type compound semiconductor, stannite-type compound semiconductor and II-VI group semiconductor.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The apparatus includes a double acting pump (22) comprises a double acting piston in a double acting cylinder thus defining two pump chambers, where each of the two pump chambers provides a respective one of the pump arrangements. The pump double acting pump is operable alternately to draw in a charge of feed gas whilst exhausting a charge of permeate gas and to compress and deliver a charge of feed gas to the hollow fiber separation arrangement whilst decompressing a charge of permeate gas from the hollow fiber separation arrangement. The displacement volume is the same at each end of the double acting piston. The two double acting pumps are provided, to operate substantially in antiphase, where as one pump draws in a charge of feed gas whilst exhausting a charge of permeate gas, the other pump is compressing a charge of feed gas whilst decompressing a charge of permeate gas, and vice-versa. The two double acting pistons are fixedly coupled and connected to a drive which causes the double acting pistons to reciprocate in their respective cylinders. The chamber of each double acting pump has a feed gas delivery passage connected in common to the inlet flow passage of the hollow fiber separation membrane. In the gas separation apparatus: where one chamber of each double acting pump has a permeate gas inlet passage, the permeate gas inlet passages being connected in common to the permeate gas passage of the hollow fiber separation membrane arrangement; and a heat exchanger (18) arrangement is provided to extract heat from the gas passing in use into the hollow fiber separation membrane arrangement. The feed gas is air and the permeate is an oxygen-enriched air fraction and the retentate is a nitrogen-enriched air fraction.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The electron conductor layer is formed of material selected from the group consisting of titanium dioxide and zinc oxide. The surface passivation layer is formed of fluoride ions and ammonium ions.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The ceramic perimeter element is made of aluminum oxide. The thermally conductive and electrically nonconductive surface is made of aluminum nitride.
TECHNOLOGY FOCUS - METALLURGY - Preferred Properties: The magnesium metal has particle size of 1-500.m, and is in the form of granular. Preferred Composition: The molar ratio of magnesium and niobium is 1.1-10.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The 3-octahedron-type synthetic smectite is synthetic smectite containing stevensite, and is of formula: LixMgySi4O10(OH)2 (I), where x is more than 0.3 to less than 0.7, and y is more than 2.6 to less than 3. Preferred Properties: The 3-octahedron-type synthetic smectite has viscosity of 300-600 mPa.second at 20 degrees C, when it is set as 1 %mass dispersion aqueous medium.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The water-soluble polymer is carboxymethylcellulose ammonium. Preferred Process: Water-soluble polymer is removed by heating, during manufacture of synthetic smectite film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Film: The deposition film contains hydrogen derived from silicon-hydrogen bond or nitrogen-hydrogen bond. Light irradiation is performed by plasma processing in the presence of atmospheric gas chosen from helium, neon, argon, mixed gas of helium and hydrogen, mixed gas of neon and hydrogen, mixed gas of argon and hydrogen, mixed gas of helium and nitrogen, mixed gas of neon and nitrogen, and mixed gas of argon and nitrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The carbon material is chosen from carbon black, carbon nanotube and graphite.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polyimide resin dispersing agent is branched polyimide resin dispersing agent having isocyanuric ring structure.
TECHNOLOGY FOCUS - METALLURGY - The manufacturing method of thin film solar cell is selected from copper (Cu), silver (Ag), gold (Au), Gallium (Ga), Aluminum (Al), Sulfur (S), zinc (Zn), cadmium (Cd), silicone (Si), germanium (Ge), tin (Sn), lead (Pb), selenium (Se), tel rhenium (Te), lithium hydride (LiH), Sodium hydride (NaH), Potassium Hydride (KH), calcium silicate hydrate (CsH), Lithium Borohydride (LiBH4), Sodium borohydride (NaBH4), Lithium aluminium hydride (LiAlH4), Sodium cyanoborohydride (NaBH3), Super Hydride (LiBHEt3), Sodium cyanoborohydride ( NaCNBH3), Sodium aluminium hydride (NaAlH4), Lithium bis(trimethylsilyl)amide (LiHMDS) and Sodium bis(trimethylsilyl)amide (NaHMDS).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The silver powder may also be surface-treated with solid fatty acid. The liquid fatty acid has a melting point of -20 degrees C to +20 degrees C. The solid fatty acid has a melting point of +20 degrees C or more. The quantity of fatty acid is 0.1-5 %mass with respect to the total amount of silver powder and fatty acid. The liquid fatty acid is butyric acid, valeric acid, caproic acid, heptanoic acid, caprylic acid, pelargonic acid, myristoleic acid, palmitoleic acid, ricinolic acid, oleic acid, linoleic acid, and/or linolenic acid, preferably oleic acid and/or linolenic acid. The diluent is reactive diluent, preferably 1,2-epoxy-4-(2-methyl-oxiranyl)-1-methylcyclohexane or 4-t-butylphenylglycidyl ether.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The thermosetting resin is epoxy resin and/or phenol resin. The thermoplastic resin is phenoxy resin, butyral resin, cellulosic resin, acrylic resin, and/or polyester resin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The aqueous solution is 25% sodium borohydride solution in water.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The pressure sensitive adhesive material of the adhesive tape is pure acrylate.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No preparation method is given. SPECIFIC COMPOUNDS - 3 Compounds (I) are disclosed i.e. 8,16-bis(decyldimethylsilylethynyl)flavanthrene of formula (Ia), 8,16-bis(butyldiisopropylsilylethynyl)flavanthrene and 8,16-bis(triisopropylsilylethynyl)flavanthrene.    EXAMPLE - N-Butyllithium (8 mmole) was added dropwise to a solution of decylethynyldimethylsilane (1.851 g) in anhydrous tetrahydrofuran (30 cm3) at 0 degrees C within 5 minutes to yield a colorless clear solution. The cooling bath was removed and the solution was stirred at 22 degrees C for an additional 30 minutes. The reaction mixture remained as a clear colorless solution. Flavanthrone (0.817 g) was added in one portion as a solid (deep yellow) and the mixture was supersonicated for 2 minutes, then stirred at 22 degrees C for 2 hours. The mixture was then placed in an oil-bath and stirred at 55 degrees C for 20 hours to yield a pale-brown suspension. The reaction was quenched with saturated ammonium chloride solution (50 cm3) and the layer mixture was stirred at 22 degrees C for 30 minutes. The upper organic layer was separated and the aqueous later was extracted with diethyl ether (2x 20 cm3). The solvents of the combined organic extracts were removed by vacuum evaporation and the brown residue was dissolved in chloroform, then suction filtered through a silica plug (washed with chloroform). The filtrate (brown-red solution) was vacuum evaporated to dryness to yield a brown-red oily residue which was purified by flash-column chromatography on silica to afford 8,16-bis(decyldimethylsilylethynyl)flavanthrene.
TECHNOLOGY FOCUS - METALLURGY - The metal powder is micro-nano iron or nickel alloy powder.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The conductive matrix in step (G) is indium tin oxide glass.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The conductive matrix in step (G) is conductive metal sheet.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The conductive matrix in step (G) is drum-shaped and belt-shaped conductive metal or conductive alloy.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The 4-bromine-phthalonitrile in step (C) is 4-bromine-5-nitryl phthalonitrile, 4-bromine-5-p-tertiary butyl phenoxy-phthalonitrile, 4-bromine-5-m-phenoxy-phthalonitrile, 4-bromine-5-o-phenoxy-phthalonitrile, 4-bromine-5-p-phenoxy-phthalonitrile or 4-bromine-5-nitryl-p-isopropyl phenoxy-phthalonitrile.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The conductive matrix in step (G) is polyester sheet coated with conducting medium.
TECHNOLOGY FOCUS - METALLURGY - The distribution plate comprises an aluminum material.
TECHNOLOGY FOCUS - METALLURGY - The light-capturing element includes chemical luminescent substance such as alkaline earth metal aluminate, coated alkaline earth aluminate, alkaline earth silicate or zinc sulfide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The window layer is made of phosphide selected from one of aluminum gallium indium phosphide and aluminum indium phosphide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The sintered compact is manufactured in reducing environment containing nitrogen, argon, helium, carbon dioxide, vacuum and hydrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The titanium-based alloy is palladium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The transition metal(s) is from iron-platinum group. The carrier material is a porous network of carbon and nitrogen and fulfills the conditions for coordinative binding of the transition metal to the substrate. The reducing agent is hydrogen (preferred), ethylene glycol, sodium borohydride, hydrazine and/or ammonia. The transition metal is in an oxidation state of zero. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The substrate base comprises first and second strands that are spaced apart from each other, which extends longitudinally in first and second directions, to form a grid with openings, which are respectively bonded by an adjacent pair of the first strands and an adjacent pair of the second strands, where the number of substrate fibers extends from at least one of the first and the second strands, which are spaced apart from each other. The substrate base comprises fields that are spaced apart from each other, where the number of substrate fibers contacts at least one of the fields, which are spaced apart from each other. The catalyst film contacts both the substrate base and the substrate fiber. Preferred Method: The method further comprises forming the number of substrate fibers by oxidizing a crude substrate base with the metal in such a manner that the metal contained in a portion of the crude substrate base is oxidized to form the oxide of the metal, where the remaining un-oxidized portion of the crude substrate base is the substrate base. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compositions: The alkoxy silyl group containing compound which has thiol group is alkoxy silyl group containing compound of formula R2-Si(R1)(R3)-R4-SH. The (meth)acrylic-type compound is (meth)acrylamide compound of formulae CH2=C(R5)-C(=O)-N(R7)-R8 or CH2=C(R5)-C(=O)-O-R6.R1-R3=1-4C alkyl group or 1-4C alkoxy group;R4=1-12C alkylene group;R5=H or Me; andR7,R8=H, halo or monovalent organic group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The carbon material is chosen from carbon black and graphite.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The branched polymer dispersing agent is comb-shaped polymer dispersing agent or star-shape polymer dispersing agent.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The nickel-type lithium containing complex oxide is of formula: LiaNi1-(b+c)CobMcO2, where a is 1-1.05, b is 0.1-0.35, c is 0.005-0.30 and M is aluminum, strontium or calcium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The proton donor is of formula: M(XARn)m, or of formula: M(O3S-CH(-CH2-COOR13)-COOR14)m'. The polyaniline composite dissolves 95 g of toluene and 5 g of isopropyl alcohol in solvent at 25 degrees C. The polyaniline composite further contains phosphorus. The composition further contains phenolic compound, heat-resistant stabilizer.M=H, organic free radical or inorganic free radical;m,m'=valence of X;X=anion;A=optionally substituted hydrocarbyl;R=-H, -R1, -OR1, -COR1, -COOR1, -C(=O)(COR1) or -C(=O)-(COOR1);R1=optionally substituted hydrocarbyl, silyl, alkylsilyl, -(R2O)x-R3 or (OSiR3)2x-OR3;R2=alkylene;x,n,r=1 or more;R13,R14=hydrocarbyl or -(R15O)r-R16;R15=hydrocarbyl or silylene;R16=H, hydrocarbyl or R17;andR3,R17=hydrocarbyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The weight average molecular weight of polyaniline molecule is 52000 or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal oxide is an oxide containing tin and/or antimony, preferably antimony-doped tin oxide (5-50 wt.%). The conductive particles are acicular microparticles. The functional layer is chosen from transparent conductive layer, damage-resistant layer, weatherproof layer, reflection-prevention layer, anti-fingerprint layer and pollution-protection layer.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The conductive layer further contains crosslinking agent and/or surfactant.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The window layer is made of zinc oxide, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and gallium doped zinc oxide.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Components: The light source includes organic or inorganic light emitting diodes. The light-emitting diode includes organic light emitting diodes. The reflective display includes an electrophoretic display or a multi-layer liquid crystal display. The solar cell is a silicon-based solar cell, a thin-film solar cell, an organic photo-voltaic solar cell and/or a dye- sensitized solar cell.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The vapor or gas molecules are chosen from moisture, oxygen, nitrogen, hydrogen, carbon dioxide, argon and hydrogen sulfide. The inorganic barrier layer contains aluminum, silver, silicon, zinc, tin, titanium, tantalum, niobium, ruthenium, gallium, platinum, vanadium and/or indium. The inorganic reactive layer includes alkali metal oxide, zinc oxide, titanium oxide, metal-doped zinc oxide and/or silicon oxide, or inorganic matrix. The solar cell includes copper, indium, gallium, arsenic, cadmium, tellurium, selenium and/or sulfur. The inorganic reactive layer is doped with non-oxide chemical component(s). The barrier layers include two barrier layers, and reactive layer sandwiched between two barrier layers. The barrier layers are made of amorphous materials. The inorganic barrier layer is transparent. Preferred Property: The thickness of inorganic barrier layer and inorganic reactive layer is each 10 nm to 1 micron.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method : The step (c) is conducted at a microwave power of 50-2000 watts, preferably 150-300 watts for not more than 10 minutes. The step (c) is conducted at a temperature of 50-100 degrees C, preferably 60-80 degrees C. The method further comprises before step (b), microwave heating the nanotube dispersing solution at a microwave power of 150-300 watts for not more than 5 minutes to surface modify the carbon nanotubes. Preferred Components: The solvent has a pH of not greater than 4, preferably 1-3. The weight ratio of the oxidant to the carbon nanotubes is not less than 2/1, preferably not less than 5/1. The oxidant comprises potassium chlorate, sodium chlorate, potassium perchlorate, hydrogen peroxide and/or potassium permanganate. EXAMPLE - Sulfuric acid solution (45 ml) was mixed with 5 ml of phosphoric acid to obtain an acidic aqueous solution. Multi-walled carbon nanotubes (0.05 g) was added into the acidic aqueous solution followed by stirring at room temperature for 1 hour to obtain a nanotube dispersing solution. Then, the nanotube-dispersing solution was heated by microwave at a microwave power of 200 watts for 2 minutes to conduct surface modification of the carbon nanotubes. Potassium permanganate (0.25 g) was added into the nanotube dispersing solution followed by stirring the solution at a room temperature for 30 minutes to obtain a reaction solution. The reaction solution was heated by microwave at a microwave power of 150 watts for 4 minutes at 65 degrees C. Then the reaction solution was filtered using a filter and an aspirator. The powders obtained on the filter were scraped off and dried to obtain the graphene nanoribbons.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The film-forming inorganic substance comprises natural clay mineral.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic amine compound is 8C or more optionally saturated aliphatic amine compound, preferably octylamine, dodecylamine, or oleyl amine. The organic carboxylic acid compound is 8-18C optionally saturated aliphatic carboxylic acid compound, preferably octanoic acid. The monohydrazide compound is formic acid hydrazide, aceto hydrazide, propano hydrazide, butano hydrazide, 2-methyl propano hydrazide, pentano hydrazide, 3-methyl butano hydrazide or 2,2-dimethyl propano hydrazide. The molar ratio of monohydrazide compound with respect to silver atom of silver compound is 0.4-2 mol. Preferred Property: The silver nanoparticles are heated from 35 degrees C to 550 degrees C at temperature increase rate of 5 degrees C/minute, and 20-60% of weight reduction is carried out at 180 degrees C or less, measured by differential thermal thermogravimetric analysis.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The organic amine compound is 8C or more saturated or unsaturated aliphatic amine compound, preferably octyl amine, dodecyl amine, and oleyl amine. The organic carboxylic acid compound is 8-18C saturated or unsaturated aliphatic carboxylic acid compound, preferably octanoic acid. The acyl mono-hydrazide compound is of formula: RCO-NHNH2 (I).R=H or 1-4C saturated aliphatic hydrocarbyl.The acyl mono-hydrazide compound is chosen from formic acid hydrazide (HCO-NHNH2), aceto hydrazide (CH3CO-NHNH2), propane hydrazide (CH3CH2CO-NHNH2), butano hydrazide (CH3(CH2)2CO-NHNH2), 2-methyl-propano hydrazide ((CH3)2CHCO-NHNH2), pentano hydrazide (CH3(CH2)3CO-NHNH2), 3-methyl-butano hydrazide ((CH3)2CHCH2CO-NHNH2), and 2,2-dimethyl propano hydrazide ((CH3)3CHCO-NHNH2). The molar ratio of acyl mono-hydrazide with respect to silver atom of the silver compound is 0.4-2 mol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The device structure further contains additional group III-nitride layer(s). The layer (A) is transition layer (1306). The additional group III-nitride layers are group III-polar III-nitride layers. The substrate is silicon carbide substrate having miller indices (1,0,0,-1), sapphire having miller indices (0,0,0,1), nitridized misoriented substrate or silicon substrate having miller indices (1,1,1), preferably (001) silicon substrate. The additional group III-nitride layers are gallium-polar gallium nitride layers. The N-polar group III-nitride layers include gallium nitride. Preferred Process: The transition layer is doped with magnesium. The N-polar group III-nitride layers are optionally doped.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The P-type window layer is a P-type crystallite silicon material or P-type microcrystalline silicon germanium material. The glass substrate with the transparent conductive thin film is zinc oxide film, tin oxide film or tin oxide and zinc oxide composite film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The hetero polyacid is of formula: HmXY'12O40.m=3-5;X=central coordination atom;andY'=acidic group.The carrier base material is activated carbon, carbon nanotube, carbon fiber or graphite. The inert atmosphere is nitrogen atmosphere, argon atmosphere or helium atmosphere.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The silicon oxide has ratio of oxygen and silicon of 1.6-2, measured by X-ray photoelectron spectroscopy. Preferred Property: The thin film of silicon oxide has thickness of 10-300 nm. Preferred Process: The surface of base material having thin film of silicon oxide is subjected to reactive-ion-etching process using gas chosen from argon, nitrogen, oxygen and hydrogen.    TECHNOLOGY FOCUS - POLYMERS - Preferred Layer: The gas barrier laminate further has an anchor-coat layer provided between base material and thin film of silicon oxide. Preferred Composition: The material of anchor-coat layer contains polyester resin, urethane resin, acrylic resin and/or oxazoline group-containing resin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: In the method (M1), in step (a), the graphene oxide is obtained by treating graphite with at least one of acidic solution selected from hydrogen sulfate (H2SO4), potassium permanganate (KMnO4), hydrochloric acid (HCl), and hydrogen nitrate (HNO3), where H2SO4 or KMnO4 is additionally applied in the acidic solution. In the method (M2), the optoelectronic device is an organic solar cell or an organic light emitting diode (OLED), where in the organic solar cell, a buffer layer is formed on one of an interface of a positive electrode and a photo-activation layer or an interface of a negative electrode and the photo-activation layer, or on both of the interfaces of it; and in the OLED, a buffer layer is formed on one of an interface of a positive electrode and a light emitting layer or an interface of a negative electrode and the light emitting layer, or on both of the interfaces of it. Preferred Components: The sulfonyl hydrazide-based reducing agent is a compound having a sulfonyl hydrazide substituent of formula O=S(A')(NHNH2)=O. The organic solvent is selected from at least one of amides, alcohols, sulfoxides, propylene carbonate, and acetonitrile.A'=-(CH2)nCH3-, substituted mesitylene, or groups of formulae (i)-(iv);m and n=0-20. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: There is at least one partition film layer made of self-assembled microspheres. The material is an inorganic or organic material. The partition film layer made up of the self-assembled microspheres utilizes single dispersed polystyrene, silicon dioxide, titanium dioxide, zirconium dioxide microspheres, and/or microsphere of a coated core-shell structure. In the step (ii), the temperature of the thermal treatment of the partition film of composite structure is 50-200 degrees C. Preferred Method: The step (i) further comprises lifting, rotatably spraying and/or exerting a direct current (DC) outer electric field.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer partition film layer is made of polyolefin and/or polyimide. The polymer partition film layer in the step (i), is made of polyethylene, polypropylene or polyimide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: Degreasing is carried out by soaking the copper foil base material in an alkaline solution at 10-200 degrees C for 1-300 minutes, and carrying out ultrasonic oscillations at 10-100 degrees C for 1-300 minutes with a degreasing agent. Water washing is carried out at 10-100 degrees C using deionized water, and ultrasonic oscillating for 1-300 minutes. Acid washing is carried out at 10-100 degrees C using 0.1-3 mol/L acid solution. The ultrasonic oscillation is at a frequency of 20 k to 100 kHz, and a power of 50-1200 W. The sulfur tin heat treatment is carried out for 0.1-4 hours. Preferred Component: The alkaline solution is sodium hydroxide, sodium carbonate, sodium bicarbonate, or sodium phosphate. The acid solution comprises hydrochloric acid, sulfuric acid, acetic acid, or nitric acid. The sulfur source is hydrogen sulfide, elemental sulfur steam, or sulfide tin. The tin source is steam of elemental tin disulfide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The degreasing agent is detergent, ethanol, or acetone.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The alkaline etching uses 1-5 mass % sodium hydroxide or potassium hydroxide solution. The mixed solution comprises 40-50% nitric acid, and 60-70% hydrofluoric acid. The volume ratio of hydrofluoric acid and nitric acid is 1:2-7. Preferred Method: Alkaline etching is carried out at 70-90 degrees C, and comprises controlling corrosion depth at 1-6 um. Acid etching is carried out for 10-140 seconds at 2-16 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The ATO nanopowder has grain size of 5-15 nm, and the antimony is present at 5-20%.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The alcohol solvent comprises methanol, ethanol, propanol, isopropanol, or glycol.    TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Component: The filter medium of the size is filter paper, porous cloth, or micro-pore filtration membrane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The solar cell device manufacturing method further involves dry etch process by utilizing chlorine gas, fluorine gas, bromine gas and oxygen gas.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The diffusion prevention film is provided as an amorphous-silicon film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The acidic nano titania sol contains nano titania having anatase crystal structure. The aqueous nano titania sol further contains co-solvent and/or humectant. Preferred Process: At least a portion of the dried portion concentrated aqueous nano titania sol is subjected to more than 200 degrees C for 1-1000 seconds. At least a portion of gelled portion is subjected to thermal treatment by sensible heating and/or microwave heating, under reducing atmosphere. The nano titania is doped with element chosen from groups VA and VB (20 wt.% or less of total weight of the nano titania), or niobia (20 wt.% or less of total weight of the nano titania). The ultraviolet radiation is performed using ultraviolet-A, The ultraviolet-B, ultraviolet-C or X-rays. Preferred Property: The nano titania has particle size of less than 100 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The volume ratio of nitric acid and hydrogen fluoride in acid etching step is 1:3. The dilute alkali solution is potassium hydroxide with a concentration of 2%. The dilute nitric acid and hydrogen fluoride is obtained by 20 times dilution of nitric acid and hydrogen fluoride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The photovoltaic absorber layer is formed of cadmium telluride material. The first conductive film is formed of molybdenum, titanium, chromium, tungsten, nitride, cobalt, copper, metal oxide, metal selenide, metal sulfide, metal phosphide, amorphous Silicon, nanocrystalline silicon, amorphous germanium and nanocrystalline germanium. The second conductive film is formed of aluminum, indium and tin.
TECHNOLOGY FOCUS - METALLURGY - The electron reflector forming species are selected from a group of zinc, manganese and magnesium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Semiconductor wafer and metal ion are used during manufacturing solar cell wafer. The semiconductor wafer is silicon wafer. The metal ion is ion of noble metal. The concentration of metal is 10-1000 ppm, during manufacture of solar cell wafer. Preferred Property: The solar cell wafer has surface reflectance of 10% or less at wavelength of 600 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The barrier layer is made of stannum nitride and tantalum nitride.    TECHNOLOGY FOCUS - METALLURGY - The electrode layer is made with sodium metal ions.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The recesses are formed by etching with mixed acid solution added with the acid such as fluoride, sulfuric acid, and nitric acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The etching step comprises: etching with the acidic solution such that the metal oxide and OMS are removed from the OMS-metal oxide-carbon complex to obtain the hierarchical mesoporous carbon; or etching with the basic solution such that the OMS is removed from the OMS-metal oxide carbon complex and the obtained hierarchical mesoporous carbon includes the metal oxide. The first heat treating process is performed under air atmosphere at 300-700 degrees C. The second heat treating process is performed under a non-oxidative gas atmosphere at 600-1200 degrees C. Preferred Components: The metal salt comprises at least one of iron nitrate, cobalt nitrate, nickel nitrate, iron chloride, cobalt chloride, iron sulfate, cobalt sulfate and nickel sulfate. The average particle diameter of the metal oxide within the OMS-metal oxide complex is 20-200 nm. The metal oxide within the OMS-metal oxide complex comprises at least one of cobalt oxide, iron oxide or nickel oxide. The acidic solution is a hydrofluoric acid solution. The basic solution is sodium hydroxide solution or potassium hydroxide solution. EXAMPLE - Ferric nitrate (2.9 g) was dissolved in water to prepare an iron nitrate aqueous solution, and KIT-6 (ordered mesoporous silica (OMS) material, 1 g) used as a template, was impregnated with the iron nitrate aqueous solution (5.9 g). Then the resulting product was dried and heat treated in air at 550 degrees C for 3 hours, and the iron nitrate was converted to iron oxide to form an OMS-iron oxide complex. The OMS-iron oxide complex (5.56 g) was impregnated with a solution containing sucrose (6.25 g) dissolved in water. The impregnated OMS-iron oxide complex was heat treated under a nitrogen atmosphere at 900 degrees C for 4 hours. The heat treated product was etched with a 50 wt.% hydrofluoric acid solution to obtain the hierarchical mesoporous carbon product.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The reservoir includes at least one compression device, preferably with at least one elastic element for compressing the ion exchange vessel, preferably the ion exchange medium, in the ion exchange vessel. The sheath of the ion exchange vessel is at least partially elastic. The reservoir exhibits attachment geometry of the ion exchanger vessel, with which the inlet is connected with the fluid inlet or the outlet is connected with the fluid outlet. The ion exchange vessel is arranged in a fixed holder casing, preferably an inner cylinder, in the reservoir. The reservoir has an exchange port for ion exchangers, which is closable by a lid (54), preferably by a snap lock or latching lock. The ion exchange vessel is maintained by a holding device, preferably a bipartite holding part having nails or a locking connection, on the lid. The lid has a least two step opening mechanism (70).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The catalyst ink further comprises a first and second intermediate coating disposed between the particle base and the two-dimensional catalyst film; and ink filler (112). Preferred Components: The two-dimensional catalyst film contacts the outermost and/or innermost surface of the particle base. The particle base exhibits a base dimension, which is 50-10000, preferably 100-5000 times greater than the thickness of the two-dimensional catalyst film. The two-dimensional catalyst film exhibits a thickness of 1-20 atomic layers. The particle base contains glass or a non-noble metal.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The first and second intermediate coating contains a first and a second polymer material, where the first polymer material is different from the second polymer material. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The primary solution is heated to predetermined temperature. The primary solution and secondary solution are contacted by pouring the secondary solution into the heated primary solution. The molar ratio of indium component and zinc component is 9/1-1/9.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The primary solution contains surfactant. The raw material containing phosphorus component is tris trimethylsilyl phosphine. The raw material containing sulfur component is bistrimethyl silyl sulfide. The indium component is indium acetate. The zinc component is zinc acetate.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The organic solvent used for washing is ketone or alcohol.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyimide includes a repeating unit of formula (I). The addition amount of dehydrating agent is such that the ratio of number-of-moles of dehydrating agent and number-of-moles of amide group in polyamic acid is 10-0.01. The addition amount of imidating agent is such that the ratio of imidating agent and number-of-moles of amide group in polyamic acid is 10-0.01.R1=tetravalent organic group chosen from groups of formulae (i)-(v);R2=divalent organic group chosen from groups of formulae (vi)-(xv);andR3=trifluoromethyl.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The component (A) is of formula (II) or (III). The component (B) is epoxy compound of formula (IV). The content of component (B) is 3-50 parts mass with respect to total content of 100 parts mass of components (A) and (B).R5,R6=1-4C alkyl or 6-10C aryl;E1,E2=epoxy containing group;b=2-5;b-c+1=2-6;c=0-4;andd=3-6.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The colloid-forming fluorinated acid polymer has a fluorinated olefin backbone and a pendant group consisting of fluorinated ether sulfonate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The 0.1 mm or more gap of the copper alloy is 0.5% or less. The average particle diameter of copper alloy in surface perpendicular to the growth direction is 0.5 mm or less. The gallium concentration distribution of copper alloy in the surface direction perpendicular to the growth direction is less than 0.5 %mass.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The compound (a) having dithiolane-type partial structure (I), is p-type organic-type semiconductor material having number average molecular weight of 20000-50000. The compound (a) further has a polycyclic-type partial structure of formula (II).Z1=C, Si, or Ge;R1,R2=alkyl, fluoroalkyl, cycloalkyl, aryl, heteroaryl, or alkylsilyl (all optionally substituted);andR1+R2=ring. Preferred Definitions:    Z=He optionally forming benzene ring or thiophene ring with carbon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The barrier layer is made of a material selected from a group comprising titanium nitride, titanium aluminum nitride, tantalum nitride, chromium nitride, titanium diboride, lanthanum hexaboride and tungsten silicide.    TECHNOLOGY FOCUS - METALLURGY - The metal support is made of a material selected from a group comprising iron based metal alloy, nickel based metal alloy, copper based metal alloy, austenitic steel and ferritic steel.
TECHNOLOGY FOCUS - METALLURGY - The lower layer is made of aluminum, silver, copper, nickel, titanium or zinc, or their alloys. The upper layer is made of tin, lead tin, copper, silver, gold, zinc, nickel, vanadium, palladium or their alloys.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal catalyst comprises palladium catalyst.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): The 1,2,4,5-substituted phenyl derivative (I) is manufactured by coupling-reacting leaving group-containing compound of formula (II) and metal matrix or heteroatom group-containing compound of formula (III) in presence of a base and a metal catalyst, or coupling-reacting metal matrix or heteroatom group-containing compound of formula (IV) and leaving group-containing compound of formula (V).Y1,Y2=leaving group;andM1,M2=metal matrix or heteroatom group.Preferred Property: The 1,2,4,5-substituted phenyl derivative (I) has molecular weight of 1000 or less. Preferred Definitions:    Py=pyridyl optionally substituted by 1 or more methyl.    SPECIFIC COMPOUNDS - 34 1,2,4,5-Substituted phenyl derivatives are disclosed e.g. 2-(4-(2,4,5-tris(4-(pyridin-2-yl)phenyl)phenyl)phenyl)pyridine of formula (Ia), 2-methyl-6-(4-(2,4,5-tris(4-(6-methylpyridin-2-yl)phenyl)phenyl)phenyl)pyridine, 3-(4-(2,4,5-tris(4-(pyridin-3-yl)phenyl)phenyl)phenyl)pyridine, 4-(4-(2,4,5-tris(4-(pyridin-4-yl)phenyl)phenyl)phenyl)pyridine and 5-methyl-2-(4-(2,4,5-tris(4-(5-methylpyridin-2-yl)phenyl)phenyl)phenyl)pyridine.    EXAMPLE - 1,2,4,5-Tetrabromo-3,6-dimethylbenzene (in g) (1), 4-(2-pyridyl)phenylboronic acid (2.83), palladium acetate (26.6 mg) and 2-dicyclohexylphosphino-2',4',6'-triisopropylbiphenyl (113 mg) were dissolved in dioxane (30 mL) and water (20 ml). The reaction mixture was heat-refluxed for 72 hours, cooled, diluted with methanol, recrystallized and purified to obtain 4',5'-bis(4-(2-pyridyl)phenyl)-3',6'-dimethyl-4,4"-di(2-pyridyl)-1,1':2',1"-terphenyl (1.21), with yield of 71%.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The low-lead glass powder preferably contains (in wt.%) lead oxide (1-5), bismuth oxide (28-43), boric oxide (10-15), alumina (7-15), silica (10-15), zinc oxide (7-12), copper oxide (2-5), lithium oxide (1-3), zirconium oxide (1-2), sodium oxide (2-5), magnesium oxide (1-2) and calcium oxide (1-2).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The lead-free glass powder preferably contains (in wt.%) bismuth oxide (30-70), boric oxide (2-8), alumina (3-10), silica (10-25), cupric oxide (2-5), lithium oxide (1-9), zirconium oxide (2.5-8.5) and sodium oxide (2-4).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of zirconium oxide, nickel oxide, chromium oxide, cobalt oxide, alumina, zinc oxide, calcium oxide is 2-5 mol%, 0.2-0.5 mol%, 0.2-0.5 mol%, 0.2-0.5 mol%, 4-10 mol%, 4-15 mol% and 12-16 mol%, respectively. Preferred Properties: The seal material has average thermal expansion coefficient of 10.4-11.5x 10-6/K. The seal material is nucleated at 550-600 degrees C for 0.5-2 hours, and crystallized at 800-850 degrees C for 0.5-2 hours, and has average thermal expansion coefficient of 10.5-12x 10-6/k. The seal material is thermally treated at 750 degrees C for 200 hours. The seal material has vitrification conversion temperature of 580-680 degrees C, glass transition temperature of 630-730 degrees C, and average particle size of 20 mu m.
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preparation (Disclosed): The peptide is prepared by carrying out recombinant expression or chemo synthesis. Preferred Peptide: The peptide comprises amino acid sequence of formula: X2-Trp-X1-Asn/Thr-Pro/Arg-Trp-X3 (II).X2=0-3 arbitrary amino acids;andX3=0-12 arbitrary amino acids, preferably Trp.The peptide is chosen from peptide comprising partials sequence comprising one of 6(12) amino acid sequences (SEQ ID NO: 1-6) all fully defined in the specification and amino acid sequence of SEQ ID NOs: 7-15. The peptide comprising an amino acid sequence of SEQ ID NOs: 1-12 in which one or more amino acids are deleted, added or substituted. The peptide comprises an amino acid sequence of SEQ ID NO: 13-15. The peptide is bonded with labeled compound. Preferred Method: The method involves incubating the composition with carbon nanotube. Trp-Trp-Asn-Arg-Trp (SEQ ID NO: 7), Trp-Trp-Arg-Thr-Pro-Trp (SEQ ID NO: 8), Trp-Trp-Asn-Pro-Trp (SEQ ID NO: 9), Trp-Asn-Pro-Trp-Asn-Ser-Trp (SEQ ID NO: 10), Trp-Asn-Pro-Trp-Trp (SEQ ID NO: 11), Trp-Asn-Pro-Trp-Ala-Gly-Trp (SEQ ID NO: 12), Trp-Asn-Arg-Trp (SEQ ID NO: 13), Trp-Arg-Thr-Pro-Trp (SEQ ID NO: 14) and Trp-Asn-Pro-Trp (SEQ ID NO: 15).    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: Preferred Component: The carbon nanotube is multi-walled carbon nanotube. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: In the device (D1), the organic layer is an emissive layer and the compound is an emissive dopant, where the organic layer further comprises a host (preferably metal 8-hydroxyquinolate, especially compound of formula (II)).    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal in the compound (C1) is iridium (Ir).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general method for the preparation of the compound (C1) is given. Preferred Compound: The compound (C1) is a compound of formula (I').R1, and R3=branched alkyl with branching at a position further than the alpha position to the carbonyl group;R2=H, D, alkyl, silyl, alkoxy, amino, alkenyl, alkynyl, arylkyl, aryl or heteroaryl;R4=3C or 4C alkyl group;R5-R7=H or methyl;m=1-3. Preferred Definitions:    A=phenyl.    SPECIFIC COMPOUNDS - 50 Compounds are specifically claimed as compound (I) e.g. compound of formulae (Ia)-(Ie).    EXAMPLE - Dimer of formula (If) (2.9 g, 1.80 mmol), pentane-2,4-dione (1.80 g), K2CO3 (2.49 g) and 2-ethoxyethanol (22 ml) were stirred at room temperature for 24 hours. The precipitate was filtered and washed with methanol. The solid was further purified by passing it through a silica gel plug that was pretreated with 15% triethylamine (TEA) in hexanes and eluted with methylene chloride. 2-Propanol was added to the filtrate. The filtrate was concentrated, filtrated and then sublimed twice under high vacuum at 240 degrees C to obtain the compound (Ia) (1 g, yield 64%).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The AlxTiyOz has solid content of 0.5-5%, and particle size of AlxTiyOz is 5-50 nm, and hydrosol has pH of 7-10, preferably 2-5. The silicon dioxide has solid content of 0.5-5%, and particle size of 5-30 nm, and hydrosol has pH of 8-10. The nanosol of titanium dioxide and silicon dioxide is 0.3-3:1. The thickness of the titanium dioxide, titanium dioxide/silicon dioxide and SiA is 60-130 nm, 70-150 nm and 80-170 nm.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The glass substrate of glass ceramic is uniformly distributed with YF3 nanocrystalline orthogonal structure having grain size of 20-30 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The curved surface is etched by using chlorine gas, methane gas, tetrafluoromethane gas and trifluoromethane gas.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The lifting device is silicon carbide material.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Method: In step (3), the reaction temperature is preferably controlled at greater than 200 degrees C; and the reaction product can be further processed by subjecting it into cooling, separation, filtration, washing and drying processes to obtain multi-element metal chalcogenide nanopowder. The cooling process is preferably carried out at 80 degrees C; the separation process is performed by adding with non-solvent consisting of methanol and/or toluene to obtain precipitate; the washing process utilizes non-solvent consisting of methanol and/or toluene; and the drying process is carried out at 50 degrees C for 1 hour under vacuum condition.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The pure metal element powder consists of copper, indium and/or gallium. The chalcogen consists of sulfur, selenium and/or tellurium. The metal alloy powder consists of copper/indium alloy and/or copper/gallium alloy. The multi-element metal chalcogenide compound (I) is of formula Cux(InyGa1-y)(SzSe1-z)2 (preferably copper-indium-gallium-selenide compound, copper-indium-gallium-sulfur-selenide compound, indium-gallium-selenide compound, or indium-gallium-sulfur-selenide compound).x=0-2;y=0.5-1; andz=0-0.3.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent consists of aromatic amine of formula (II) (preferably diphenylamine, N-phenylbenzylamine, 2-anilinoethanol, and/or N-phenylethylenediamine); aromatic amine of formula (III) (preferably 4-butylaniline, 2-biphenylylamine, 2-aminobenzonitrile, N,N-diethyl-1,4-phenylenediamine, and/or o-phenetidine); or aromatic diamine of formulae (IVa)-(IVc) (preferably 1,2-phenylenediamine, 1,3-phenylenediamine, 1,4-phenylenediamine, and/or 4-methyl-l,3-phenylenediamine).R=H, 1-10C alkyl, 1-10C amino, 1-10C alkoxy, nitrile, or aryl;R', R"=H, aryl, 1-5C amino, or 1-5C alcohol group; andR1=H, 1-10C alkyl, nitrile or aryl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The base and emitter contact structures are made of silver, aluminum, titanium, palladium, zinc, platinum, nickel, tin, lead, cobalt, tungsten and bismuth.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The quantum dot particle has a diameter of 20 nm to 100 mu . The dielectric particles are fumed silica, colloidal silica or alumina nanoxide powder. The quantum dot comprises either: a core (10), and a shell (150) that at least partially overcoates the core; or a core, a metal layer (23) formed on at least a portion of the outer surface (21) of the core, and a shell that at least partially overcoats the metal layer, where the core and shell each fabricated from a semiconductor material. The silane is 3-amino propyl trimethoxysilane or 3-mercaptopropyl trimethoxysilane. Preferred Method: In the method, the step (b) comprises subjecting the dispersion from step (a) to a solid-liquid separation process to isolate the aggregates; and the step (a) comprises mixing the quantum dots with the dispersion to form the aggregates. The method of making many quantum dot particles (I) further comprises breaking down the aggregates to particles on the nanometer or micron scale. In the method, the step (d1) comprises subjecting the dispersion from step (c1) to a solid-liquid separation process to isolate the quantum dot-crosslinked silane complexes. The method of making many quantum dot particles (II) further comprises breaking down the quantum dot-crosslinked silane complexes to particles on the nanometer or micron scale. EXAMPLE - Quantum dots (100 mg in 5 ml toluene) were washed once with methanol and resuspended in anhydrous toluene (20 ml). Fumed silica (1 g) was added to the suspension and the mixture was sonicated for 4 hours. The solvent was removed by evaporation. The resulting powder was optionally washed with methanol and optionally milled to size fewer than 5 mu to obtain quantum dot-dielectric particle complexes.
TECHNOLOGY FOCUS - METALLURGY - The conductive material is made of carbon fiber material, graphite material and stainless steel material. The surface of cathode electrode is coated with molybdenum, iron, and manganese oxide and cobalt compound as catalyst. The external lead is titanium lead and copper lead.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The catalyst bed includes a catalyst selected from group of manganese oxide, silver oxide and cobalt oxide.    TECHNOLOGY FOCUS - METALLURGY - The catalyst bed includes a catalyst selected from group of platinum, palladium and ruthenium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The solvent-free coating liquid further contains aluminum, titanium, tin, zinc, zirconium, tantalum and/or niobium (0.0002-0.01 mol) with respect to 1 mol of silicon in condensation reactant of phenyl trialkoxysilane. Preferred Process: The metal alkoxide is added during manufacture of solvent-free coating liquid. Preferred Properties: The solvent-free coating liquid has ratio of peak value of molecular weight of 200-350 and peak value of molecular weight of 750-1500 of 1-3 and viscosity of 6-18 mPa.second.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The condensation reactant of phenyl trialkoxysilane is 1-6C phenyl trialkoxysilane. Preferred Process: A ( beta )-diketone, ( beta )-ketoester, ethyl acetoacetate or metal carboxylate (1.8-2.2 mol) with respect to 1 mol of metal alkoxide is further added to mixture. An alcohol having boiling point less than the phenyl trialkoxysilane as solvent is added during manufacture of solvent-free coating liquid.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The reactive compounds are azide, amines, hydrazine and/or hydrogen. Azide is alkyl azide. Azide is methyl azide, hydrogen cyanide, 1-diazo-N,N-dimethylmethanamine, trimethylsilyl azide, N'-ethanimidoylethanimidamide, sec-cyclopropanecarbohydrazonamide, tert-butyl azide and/or benzotriazole. Preferred Definitions:    X=H, halo, alkoxy, alkylamino or amine.
TECHNOLOGY FOCUS - POLYMERS - Preferred Processes: Manufacturing method involves introducing ion exchange group into polymer of polymeric composition after polymerization process. Polymerization of polymeric composition is performed at 105-130 degrees C. Preferred Parameters: Viscosity average molecular weight of component A is greater than or equal to 700000. Viscosity average molecular weight of component B is less than or equal to 500000. Porous polyethylene sheet has thickness of 10-300 mu m and porosity of 30-80%. Preferred Components: Porous polyethylene sheet is unstretched.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal organic compound containing zinc is dimethyl zinc, diethyl zinc, zinc acetate, zinc acetate anhydride or zinc-acetyl acetonate. The gas containing oxygen is water vapor, oxygen, carbon dioxide or ozone. The gas containing dopant element is diborane gas. The metalorganic containing dopant element is trimethylgallium, trimethylaluminum or trimethylindium. The metalorganic containing gas and gas containing dopant element are periodically injected within the reactor. The free electron concentration of conductive film is 1.8x 1020 cm-3. The free electron mobility of conductive film is 35 cm2/V.second.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Metal oxide nanowire is sol-gel, where the metal oxide solution comprises zinc acetate, methoxyethanol and methanolamine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The copper coating layer is formed by electroplating method using a plating bath containing sodium salt. A nickel plating layer is further interposed between base material (11) and copper coating layer.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The steel sheet contains (in %mass) carbon (0.0001-0.15), silicon (0.001-1.2), manganese (0.001-1.2), phosphorus (0.001-0.04), sulfur (0.0005-0.03), aluminum (0-0.2), nickel (0-0.6), chromium (11.5-32), copper (0-1), titanium (0-1), niobium (0-1), nitrogen (0-0.025), boron (0-0.01), molybdenum (0-2.5), vanadium (0-0.5), tungsten (0-0.3) and calcium, magnesium, yttrium and rare-earth metal (0-0.1) and remainder of iron and unavoidable impurities.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The ratio of outer diameter (OD1) and outer diameter (ODf) is 3:1.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The tempered glass preferably comprises (in %mass) silica (50-65), alumina (8-15), boron oxide (0-1), sodium oxide (12-15), potassium oxide (4-7), magnesium oxide (1.8-5), and mixture (0.001-0.5) of strontium oxide and barium oxide. The amount of mixture of magnesium oxide, calcium oxide, strontium oxide and barium oxide with respect to mixture of magnesium oxide and zirconium oxide is preferably 0.5-0.8. The arsenic oxide, antimony oxide and lead oxide are not contained. The content of mixture of tin oxide, sulfur trioxide and chloride is 100-3000 ppm. Preferred Properties: The compressive-stress layer has compressive-stress value of 10 mu m or more and thickness of 200 MPa or more. The tempered glass has liquidus temperature of 1075 degrees C or less, liquid phase viscosity of 104 dPa.second or more measured at 1250 degrees C or less, and density of 2.6 g/cm3 or less.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The gel fraction of adhesive layer for temporary attachment is 50 weight% or more.
TECHNOLOGY FOCUS - METALLURGY - Preferred Properties: The number of proton released from the metal particles during evaluation is 3x 1019/m2 or less. The particle surface has 8C or less organic substance. The metal-particle powder does not produce sintering between the particles even when maintained at 40 degrees C in air.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The piezoelectric material contains quartz crystal, potassium phosphate, barium titanate, titanic acid, zirconic acid, Rochelle salt, zinc oxide, lithium niobate, lithium tantalate, lithium tetraborate, langasite, aluminum nitride, tourmaline or sodium nitrite. The semiconductor film contains titanium dioxide, silicon carbide, gallium nitride, gallium phosphate, gallium arsenide, cadmium selenide, cadmium sulfide, ferric oxide, strontium titanate, bismuth oxide, iron-titanium oxide, manganese titanate, barium titanate, potassium tantalate, tungsten trioxide, tin oxide, niobium oxide or niobium(III) oxide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Layer: The light emitting layer contains condensed polycyclic compound as a host material, and a phosphorescent emitting material. The phosphorescent emitting material is ortho-metalated complex of metal atom chosen from iridium, osmium and platinum. The element further has an electron injection layer between cathode and light emitting layer, an electron carrying layer between cathode and light emitting layer, and a positive hole transport layer between anode and light emitting layer. The electron injection layer contains nitrogen-containing ring derivative. The electron carrying layer and positive hole transport layer contain organic electroluminescent element material containing the polycyclic compound. A reducing dopant is added to the interface of cathode and organic thin film layer. SPECIFIC COMPOUNDS - 139 Condensed polycyclic compounds (I) are disclosed e.g. 11-Phenyl-12-(1-phenyl-pyrrolidin-3-yl)-4a,11-dihydro-11,12-diaza-indeno(2,1-a)fluorene of formula (Ia), 12-(1,4-Diphenyl-pyrrolidin-3-yl)-11-phenyl-4a,11-dihydro-11,12-diaza-indeno(2,1-a)fluorene, 12-(1,5-Diphenyl-pyrazolidin-3-yl)-11-phenyl-4a,11-dihydro-11,12-diaza-indeno(2,1-a)fluorene, 11-Phenyl-12-(1,4,5-triphenyl-pyrazolidin-3-yl)-4a,11-dihydro-11,12-diaza-indeno(2,1-a)fluorene and 12-(1,5-Diphenyl-(1,2,3)triazolidin-4-yl)-11-phenyl-4a,11-dihydro-11,1 2-diaza-indeno(2,1-a)fluorene.    EXAMPLE - 11-Phenyl-4a,11-dihydro-11,12-diaza -indeno(2,1-a)fluorene (in g) (1.7), 4-bromo-1,3,5-triphenyl pyrazole (3.8), sodium t-butoxide (0.96), tris(dibenzylideneacetone)dipalladium(0) (0.46), t-butyl phosphine-fluoro boric acid (0.44) and xylene (50 ml) were mixed and heated for 72 hours. Toluene (1000 ml) was added and heated. The solution was concentrated, filtered and purified to produce 11-Phenyl-12-(1-phenyl-pyrrolidin-3-yl)-4a,11-dihydro-11,12-diaza-indeno(2,1-a)fluorene at yield of 15%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: In the process, the shift in the given geometry is the change of tetrahedral coordination to a square-planar coordination. The emission wavelength of the metal complex, after the embedding step, is shifted to at least 10 nm. The emission spectrum of the metal complex by embedding into the polymeric matrix is widened to at least 10 nm. Preferred Components: In the metal complex, the value of difference between the lower excited singlet and underlying triplet state is less than 2500 cm-1. The metal complex is of formula (I) or (II). The metal complex exhibits: an emission lifetime, in the electronic excited state, of maximum 20 mu s; and an quantum efficiency emission in the solid material of greater than 30%. The embedded metal complex emits white light.M = Cu, Ag or Au;L1-L3 = ligand, preferably monodentate, bidentate (preferred) or polydentate ligands;X = anion, preferably Cl, Br, I, SCN, CN, RS, RSe, R2N, R2P or RCC;R = alkyl (e.g. CH3, C2H5, n-propyl, isopropyl, n-butyl, tert-butyl or adamantyl), aryl (e.g. phenyl, tolyl, naphthyl or C6F5), alkenyl (e.g. CR=CR2aCR3a), alkynyl (-CCR1a), OR1a, N(R1a)2 (all deuterated, halogenated or optionally substituted by another alkyl, aryl, alkenyl or alkynyl groups), heteroaryl (e.g. furyl, thienyl, pyridyl or pyrimidyl), R1a, R2a or R3a; andR1a-R3a = H or R.
TECHNOLOGY FOCUS - METALLURGY - The catalyst metal layer is made of material selected from group consisting of nickel, iron, cobalt, ruthenium, the rhodium, palladium, osmium, iridium, platinum, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gold and silver.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Disclosed): Dibromo-type compound of formula (II) reacts with butyl lithium and ((benzenesulfinyl)oxy)sulfanyl benzenesulfinate to obtain substituted benzo chalcogeno acene compound of formula (III) as substituted benzo chalcogeno acene compound (I). Preferred Compound: The substituted benzo chalcogeno acene compound (I) is preferably of formula (IV). Preferred Definitions:    E=S;and    R1,R2=phenyl, 1-naphthyl, 2-naphthyl, 1-anthracenyl or 2-anthracenyl (all having branched alkyl).    SPECIFIC COMPOUNDS - 372 Substituted benzo chalcogeno acene compounds (I) e.g. 6,16-bis(4-(2-hexyldecyl)phenyl)-3,11,19-trithiapentacyclo(10.7.0.02,10.04,9.013,18)nonadeca-1(12),2(10),4(9),5,7,13(18),14,16-octaene of formula (IA), 6,16-bis(4-(2-methylpropyl)phenyl)-3,11,19-trithiapentacyclo(10.7.0.02,10.04,9.013,18)nonadeca-1(12),2(10),4(9),5,7,13(18),14,16-octaene, 6,16-bis(4-tert-butylphenyl)-3,11,19-trithiapentacyclo(10.7.0.02,10.04,9.013,18)nonadeca-1(12),2(10),4(9),5,7,13(18),14,16-octaene, 6,16-bis(4-(2-methylbutan-2-yl)phenyl)-3,11,19-trithiapentacyclo(10.7.0.02,10.04,9.013,18)nonadeca-1(12),2(10),4(9),5,7,13(18),14,16-octaene, and 6,16-bis(4-(2,2-dimethylpropyl)phenyl)-3,11,19-trithiapentacyclo(10.7.0.02,10.04,9.013,18)nonadeca-1(12),2(10),4(9),5,7,13(18),14,16-octaene are disclosed.    EXAMPLE - 6,17-Bis(4-(2-hexyldecyl)phenyl)-3,11,12,20-tetrathiapentacyclo(11.7.0.02,10.04,9.014,19)icosa-1(13),2(10),4(9),5,7,14(19),15,17-octaene (82 mg), toluene (6 ml), bis(1,5-cyclooctadiene)nickel(0) (27 mg) and triphenylphosphine (51 mg) were stirred at room temperature for one hour under nitrogen atmosphere. The resultant reaction mixture was heated at 120 degrees C, cooled to room temperature, and silica gel column chromatography was performed to obtain 6,16-bis(4-(2-hexyldecyl)phenyl)-3,11,19-trithiapentacyclo(10.7.0.02,10.04,9.013,18)nonadeca-1(12),2(10),4(9),5,7,13(18),14,16-octaene (IA) (51 mg).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Disclosed): Aromatic compound of formula: Ar1-X and nitrogen-containing compound of formula: Ar2Ar3N-H are reacted at 0-150 degrees C in a solvent e.g. dehydrated toluene in the presence of a catalyst e.g. tris(dibenzylidene acetone)dipalladium (0) and a base e.g. t-butoxy sodium in inert gas atmosphere e.g. argon to obtain aromatic amine derivative (I).X=halo.Preferred Layer: The organic thin film layer has a positive hole transport layer and positive hole injection layer, each containing the aromatic amine derivative. The light emitting layer contains anthracene derivative, fluoranthene derivative, styryl amine derivative and arylamine derivative. At least one of positive hole transport layer and positive hole injection layer contains acceptor material. SPECIFIC COMPOUNDS - 143 Aromatic amine derivatives are specifically disclosed e.g. 9,9-dimethyl-7-(naphthalen-2-yl)-N-phenyl-N-(4-(4-phenylphenyl)phenyl)-9H-fluoren-2-amine of formula (Ia), 9,9-dimethyl-7-(naphthalen-1-yl)-N-phenyl-N-(4-(4-phenylphenyl)phenyl)-9H-fluoren-2-amine, 9,9-dimethyl-7-(phenanthren-9-yl)-N-phenyl-N-(4-(4-phenylphenyl)phenyl)-9H-fluoren-2-amine, 9,9-dimethyl-7-(naphthalen-2-yl)-N-phenyl-N-(4-(3-phenylphenyl)phenyl)-9H-fluoren-2-amine and 9,9-dimethyl-7-(naphthalen-1-yl)-N-phenyl-N-(4-(3-phenylphenyl)phenyl)-9H-fluoren-2-amine.    EXAMPLE - 2-Bromo-7-(7,8-dihydronaphthalen-2-yl)-9,9-dimethyl-9H-fluorene (in g) (8), t-butoxy sodium (2.6), N-phenyl-N-1,1':4',1''-terphenyl-4-ylamine (6.4), tris(dibenzylidene acetone)dipalladium (0) (92), tri-t-butyl phosphine (42) and dehydrated toluene (100 mL) were added and reacted at 80 degrees C under argon atmosphere for 8 hours. The reaction solution was cooled, filtered, extracted with toluene and dried. The obtained product was purified and 9,9-dimethyl-7-(naphthalen-2-yl)-N-phenyl-N-(4-(4-phenylphenyl)phenyl)-9H-fluoren-2-amine (7.7) was obtained in the form of pale yellow powder.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method further involves forming an anti-reflection part comprising silicon nitride, silicon oxide and amorphous silicon oxide or silicon oxynitride.
TECHNOLOGY FOCUS - METALLURGY - The ion implanter includes two masks that are made of graphite and silicon carbide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The substitution reaction reagent is alkyl silyl cyanide, organic magnesium reagent, organic lithium reagent, aliphatic alcohol, halogenated alcohol, phenol, carboxylic anhydride, sulfonic acid or sulfonic acid anhydride. The cyanide content of ionic compound is 10000 ppm or less. The ionic compound is obtained by reacting cyanide compound, boron compound and halide of organic or inorganic cation. The cyanide compound is trialkylsilyl cyanide. Preferred Definitions:    R14=halo.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composite metal oxide is of formula: Li1+x(NiaMnbCoc)O2, where x+a+b+c is 1, x is 0-0.1 (including 0.1), c is 0-0.4 (including 0) and a/b is 0.7-3. The negative electrode in the battery contains graphite material, lithium metal, lithium alloy or lithium as active material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The crystalline semiconductor comprises crystalline silicon. The crystalline silicon comprises monocrystalline silicon. The wafer is a monocrystalline silicon wafer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The precursor gasses is included with trichlorosilane. The susceptors are etched using chlorine containing gas such as hydrogen chloride or chlorine.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Component: The solar cell further has zinc sulfide buffer layer, tin oxide buffer layer, and zinc oxide buffer layer, formed on metal chalcogenide layer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal chalcogenide is preferably of formula: Cu2+zZnSn1-zSySe4-y, Cu2ZnSnSySe4-y, Cu3ZnSySe4-y, CuZnSn2SySe4-y, Cu1+zZn2Sn1-zSySe4-y, CuZn2SnSySe4-y, Cu2Zn2SySe4-y, Zn2Sn2SySe4-y, Cu3+zSn1-zSySe4-y, Cu3SnSySe4-y, Cu2Sn2SySe4-y, Cu2+xZn1-xSnSySe4-y, Cu3+xZn1-xSySe4-y, or Cu1+xZn1-xSn2SySe4-y. The metal chalcogenide is formed in the form of nanocrystals having average particle size of 1-20 nm. The colloidal dispersion is in the form of nanocrystal organic ink or nanocrystal aqueous ink. Preferred Condition: The heating process is carried out at 125-300 degrees C under an atmosphere which does not contain oxygen. Preferred Process: The formed nanocrystals are coated on a substrate, and nanocrystals are heated at 350-550 degrees C, and during formation of metal chalcogenide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The metal chalcogenide is formed in presence of oleylamine and/or dodecylamine. The copper dichalcogenocarbamate is of formula: Cu2+(A-(A)C-NR1R22)2. The zinc dichalcogenocarbamate is of formula: Zn2+(A-(A)C-NR1R22)2. The tin dichalcogenocarbamate is of formula: Sn4+(A-(A)C-NR1R22)4.R1,R2=H or organic group;andR1+R2=ring(s).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The 8C or less organic substance is added to surface of metal particle in metal particle powder.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The tempered glass further contains (in %mol) zirconium oxide (1-9), and titania (0.0.1). Preferred Properties: The compressive-stress layer has compressive-stress value of 300 MPa or more and thickness of 10 mu m or more. The tempered glass has deterioration factor of 0.01-0.6, liquidus temperature of 1075 degrees C or less, liquid phase viscosity of 104 dPa.second or more, density of 2.6 g/cm3 or less and Young's modulus of 65 GPa or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of aluminum oxide and total content of magnesium oxide and calcium oxide contained in the tempered glass is 4-13 mol% (more preferably 5-11 mol%) and 3-13 mol% (more preferably 5-12 mol%), respectively. The content of boric oxide, lithium oxide, sodium oxide and potassium oxide is 0-3 mol% (or 0-1 mol%), 0-8 mol% (or 0-2 mol%), 5-20 mol% (more preferably 10-18 mol%) and 0.1-10 mol% (preferably 1-6 mol%), respectively. The molar ratio of total content of aluminum oxide and sodium oxide, to silicon dioxide is 0.1-0.7, more preferably 0.2-0.5. The molar ratio of total content of boric oxide and sodium oxide to silicon dioxide is 0.1-0.7, more preferably 0.15-0.27. The molar ratio of phosphorus pentoxide to silicon dioxide is 0-0.5 or 0-0.1. The molar ratio of aluminum oxide to silicon dioxide is 0.01-0.7, preferably 0.07-0.2. The molar ratio of sodium oxide to aluminum oxide is 0.5-4, preferably 1-2.3. The etching process is carried out using etching liquid containing hydrogen fluoride, hydrochloric acid, sulfuric acid, nitric acid, ammonium fluoride, sodium hydroxide and/or ammonium hydrogen fluoride. The mass of glass is 0.05-50 g/cm2, when it is immersed in 10 %mass hydrochloric acid aqueous solution (maintained at 80 degrees C) for 24 hours. Preferred Properties: The etched surface has surface roughness (Ra) of 1 nm or less. The ratio of surface roughness of end surface to surface roughness of etched surface is 1-5000. The compressive-stress layer has thickness of 10 mu m or more and compressive-stress value of 200 MPa or more. The tempered glass has liquidus temperature of 1250 degrees C or less, and liquid phase viscosity of 104 dPa.second or more at 1280 degrees C and 102.5 dPa.second at 1620 degrees C or less, density of 2.6 g/cm3 or less.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Property: The adhesive layer for temporary attachment has gel fraction of 80 wt.% or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The compound (A) contains 20-80% of ethylene oxide unit per molecule of the compound (A). The compound (B) is compound obtained by reacting polycaprolactone modified hydroxyethyl (meth)acrylate with reaction product of organic isocyanate having 3 or more isocyanate groups in a molecule, and alcohol having 13-25C long chain alkyl. The ratio of the compound (B) with respect to the gross mass of the compounds (A,B) is 10-90 %mass. The imprint material further contains surfactant and solvent. The polymeric group is acryloyloxy, methacryloyloxy, vinyl or allyl group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electrode is arranged on substrate (71) comprising glass. Preferred Process: The thinner transparent conductive zinc-oxide higher-boron-doped layer is deposited such that the ratio of diborane and diethyl zinc is 0.1-1, preferably 0.2-0.55. The thicker transparent conductive zinc-oxide lower-boron-doped layer is deposited such that the ratio of diborane and diethyl zinc is 0.01-0.2, preferably 0.02-0.1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compounds: The electrolyte solution is an aqueous solution containing potassium hydroxide, sodium hydroxide, lithium hydroxide, barium hydroxide, and/or magnesium hydroxide. The positive-electrode catalyst contains manganese dioxide or platinum. The catalyst contains perovskite type complex oxide of formula: AB'O3, where A is lanthanum, strontium and/or calcium, and B' is manganese, iron, chromium and/or cobalt.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The content of magnesium in the aluminum alloy is 0.0001-8 wt.%. The content of elements other than aluminum, magnesium, silicon and iron is 0.005 wt.% or less. The content of iron is 0.0001-0.03 wt.%, and the content of silicon is 0.0001-0.02 wt.%. The sum total content of elements other than magnesium and aluminum is 0.1 wt.% or less.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The anion-exchange membrane comprises polysulfone, polyether sulfone, polyphenyl sulfonate, polyvinylidene fluoride, and/or polyimide, or resin of styrene and/or divinylbenzene, and/or their copolymers. The anion-exchange capacity of the anion-exchange membrane is 0.5-3 meq/g.
TECHNOLOGY FOCUS - METALLURGY - The tip and ground electrode contains material selected from silicon, manganese and aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The X-ray diffraction pattern obtained by drying, molding and baking the catalyst precursor shows a peak in the lattice space of 5.3 plus minus 0.5, 3.73 plus minus 0.3, 2.63 plus minus 0.2, 2.26 plus minus 0.2 and 1.71 plus minus 0.1. The catalyst precursor does not have a larger peak than the peak intensity of 5.3 plus minus 0.5 in the range of lattice space of 8.7 plus minus 0.5 and 7.6 plus minus 0.5. Preferred Composition: The atomic ratio of copper with respect to total content of copper, zinc and aluminum is 0.5-0.9. The atomic ratio of zinc with respect to total content of copper, zinc and aluminum is 0.01-0.15. The atomic ratio of aluminum with respect to total content of copper, zinc and aluminum is 0.1-0.5. The ratio of aluminum and zinc is 2.5-5. Preferred Conditions: Molding is carried out by tableting molding or extrusion molding, or extrusion molding without using an inorganic binder. The hydrogen-containing gas is obtained by carbon-monoxide conversion or carbon-monoxide selective methanation.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The relative density of oxide sinter is 93% or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The amount of unit of crosslinked (meth)acrylic resin derived from polyfunctional (meth)acryl monomer is 0.5-50 wt.%. Preferred Properties: The organic solvent has boiling point of 160-290 degrees C. The inorganic fine particle-dispersed paste composition has viscosity of 10-100 Pa.second, measured using Brookfield viscometer at 23 degrees C and rotation speed of 10 rpm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The annealing process during the manufacture of the zinc oxide type transparent conductive film forming material is carried out in inert atmosphere chosen from nitrogen, argon, helium, carbon dioxide, vacuum and hydrogen. Mixture of titanium oxide powder, and zinc oxide powder or zinc hydroxide powder is used in the manufacturing process.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: Acidic conditions include perchloric acid through cyclic voltammetry or linear scanning electrochemical processing the catalyst, where in a molybdenum electrode, carbon surface is introduced with functional group and micro noble metal molybdenum. Electrochemical processing is carried out for 5-50 hours, - 0.15 to + 1 V, and at a scanning speed of 50-200 mV/second. When linear scanning electrode is 300-5500 revolutions/minute (rpm), the electric potential is - 0.15 to + 1 V, and at a scanning speed of 10-50 mV/second.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The hydroxyl-containing non-electroconductive polymer is obtained by reacting alcohol compound of formula (-(CH2-C(R1)(C(=O)-O-R2-OH)-)) and acid anhydride compound of formula (O-(C(=O)-(R3)m-(CXnH2-n)l-R4)2).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal layer is a metal alloy that includes a member consisting of iron, nickel and/or cobalt and copper and/or zinc.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The conductive silicide core is titanium silicide core or cuprous sulfide core. The n-type photoactive hematite shell includes a dopant to absorb visible light. The nano beams are two dimensional. The thickness of the n-type photoactive hematite shell is 7-40 nm, preferably 25-30 nm. The dopant includes tungsten.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The first compartment includes a basic solution and the second compartment includes an acidic solution. Preferred Method: The method further comprises annealing the hematite hetero-nanostructure. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The transparent conductive oxide layer is made of boron-zinc oxide. Preferred Property: The transparent conductive oxide layer has thickness of 1000-2000 nm.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Composition: The organic thin film layer is chosen from light-emitting layer (130), hole-transport layer, hole-injection layer, electron-transport layer, electron-injection layer and/or hole-blocking layer. The light-emitting layer contains phosphorescence or the fluorescence host material.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The imidazo pyridine derivative (I) is preferably of formula (II) or (III).X5-X7=-N- or - CR';andR'=H or D. Preferred Definitions:    Ar2=naphthyl, anthracenyl, phenanthrenyl, triphenylenyl or pyrenyl (all optionally substituted).    SPECIFIC COMPOUNDS - 66 Imidazo pyridine derivatives e.g. 4,6-bis(naphthalen-2-yl)-2-(4-(2-(naphthalen-2-yl)imidazo(1,2-a)pyridin-3-yl)phenyl)pyrimidine of formula (Ia), 2-(4-(2-(naphthalen-2-yl)imidazo(1,2-a)pyridin-3-yl)phenyl)-4,6-bis(phenanthren-9-yl)pyrimidine, 4,6-bis(phenanthren-9-yl)-2-(4-(2-phenylimidazo(1,2-a)pyridin-3-yl)phenyl)pyrimidine, 4,6-bis(naphthalen-2-yl)-2-(4-(2-(naphthalen-2-yl)imidazo(1,2-a)pyridin-3-yl)phenyl)pyrimidine, and 2-(4-(2-(naphthalen-2-yl)imidazo(1,2-a)pyridin-3-yl)phenyl)-4,6-bis(phenanthren-9-yl)pyridine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The vapor deposition material further contains indium, indium oxide or compound containing indium or indium oxide. The content of indium, indium oxide or compound containing indium or indium oxide is 1-50 wt.% with respect to total content of silicon and silicon oxide. The ratio of number of atoms of silicon and oxygen in the vapor deposition film is 1.5-2.1. Preferred Properties: The volume density of vapor deposition material is 0.8-1.8 g/cm3. The tensile strength of gas-barrier vapor deposition film is 3% or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The metal thin film has thickness of 5-10 nm. The transparent conductive thin film has volume resistivity of 10-4 Omega .cm or less, and transmittance of light with wavelength of 300-500 nm of 70% or more, preferably 80% or more. Preferred Composition: The metal thin film further contains copper, zinc and/or indium (10 vol.% or less).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Component B2 is polyamine crosslinking agent. Polyamine crosslinking agent is aromatic polyvalent amine crosslinking agent. Component C2 is ammonium salt of carboxylic acid.    TECHNOLOGY FOCUS - POLYMERS - Preferred Compositions: Component A1 contains 0.1-20 wt.% alpha , beta -ethylenically unsaturated dicarboxylic acid monoester monomer unit. Component A3 and/or component B3 contain basic crosslinking promoter.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The transparent conductive thin film has transmittance of light with wavelength of 700-800 nm of 60% or more, and transmittance of peak wavelength of 80% or more. The thickness of metal thin film is 5-20 nm, preferably 5-10 nm. Preferred Composition: The metal thin film further contains copper, zinc and/or indium (10 vol.% or less).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The solar cell elements are produced as semiconductor material using indium gallium phosphide, gallium arsenide, indium gallium arsenide and nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic particles of layer (B) are titanium dioxide particles. The content of barium sulfate, silicon dioxide and titanium dioxide in layer (A) is 16-24 %mass, 0.5-3 %mass and 2-6 %mass, respectively. The content of non-crystalline cycloolefin type copolymer and titanium dioxide in layer (B) is 3-15 wt.% and 8-20 wt.%, respectively. Preferred Properties: The layer (A) has ~(D)b value (yellowness change value) of less than 5, which is the value measured before ultraviolet (UV) irradiation and after UV irradiation at illumination intensity of 100 mW/cm2, 60 degrees C and 50% relative humidity for 48 hours. The relative reflectance of white polyester film is 100% or more in 560 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Conditions: After supporting process and before introduction of source gas, a reducing gas is introduced into the reaction container, the surface activity of the catalyst particles is improved, and heating aggregation is promoted.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The powder from which boron is removed, is passed into the high-temperature region containing hydrogen. The silicon dioxide component contained in the powder is reduced by hydrogen, to form silicon. The resultant powder is cooled, recovered as the silicon powder, and the resultant silicon powder is heated to obtain the molten metal of silicon. The obtained molten metal is centrifuged, the heavy impurity element is removed from silicon, and recovered as silicon powder.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The silicon comprises (in %mass): particles (20) having diameter of 0.6-3 mm, particles (80) having diameter greater than 3-40 mm. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The concentration of oxygen-deficiency type defect of the intermediate layer is more than 1x 1014 atoms/cm3 and less than 1x 1018 atoms/cm3.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The copper precursor is chosen from copper chloride, copper acetoacetonate, copper nitrate, copper sulfate and copper acetate. The indium precursor is chosen from indium chloride, indium acetoacetonate, indium nitrate, indium sulfate and indium acetate. The gallium precursor is chosen from gallium chloride, gallium acetoacetonate, gallium nitrate, gallium sulfate and gallium acetate. The zinc precursor is chosen from zinc chloride, zinc acetoacetonate, zinc nitrate, zinc sulfate and zinc acetate. The tin precursor is chosen from tin chloride, tin acetoacetonate, tin nitrate, tin sulfate and tin acetate. The solvent is chosen from methanol, ethanol, 2-propanol, 2-methoxyethanol, ethylene glycol, monoethanolamine, tridecylalcohol, pentanol or propylene glycol. The sulfur precursor is chosen from thiourea, thioacetamide and sodium sulfide. The selenium precursor is chosen from selenium chloride, sodium selenium oxide, sodium selenide and selenium powder.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Metal nanoparticle is gold, silver, copper, aluminum or alloy.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The viscosity of slurry-like adhesive when measured by B-type viscometer at 30 rpm and 23 degrees C is 3000 mPa.second or more. The joining is performed at room temperature. The heat-resistant glass plates are made of quartz glass. Heating is carried out at 500 degrees C or more. The number of heat-resistant glass plates is 10 or more. The glass polygonal tube has outer diameter of 500 mm or more, wall thickness of 10 mm or more and length of 1000 mm or more. The dimensional tolerance of the outer diameter, wall thickness and length of glass polygonal tube is within plus minus 5 mm, plus minus 2 mm and plus minus 10 mm, respectively.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The solar cell comprises silicon carbide, gallium nitride, gallium phosphide, gallium sulfide, aluminum arsenide, aluminum phosphide, cadmium sulfide, zinc telluride, zinc selenide, zinc sulfide, or its alloy. The solar cell further comprises nitrogen (N, 0.01-10%). The absorbing layer comprises dilute nitride absorbing layer having semiconducting alloy with group-III element, group-V element, and nitrogen. The dilute nitride absorbing layer comprises nitrogen (0.01-10 atomic%). The dilute nitride absorbing layer comprises electrically active carrier (1016-5x 1018 cm3). The solar cell comprises GaxInyAlzNaAsbPcSbdSe. The substantially transparent solar cell comprises gallium, arsenide, nitrogen and phosphorus; and N has concentration of 0.01-10%.x, z, b,c, d, e=less than 1;anda=0.0001-0.01.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The boron compound has average primary particle diameter of 10 nm-12 mu m (preferably 10 nm-5 mu m) and volume average secondary particle diameter (50%D) of 10 nm-15 mu m.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred composition: The dispersion medium contains an organic binder.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Conditions: The area of support is 30 cm2 or more. While sending out the belt-shaped support from a delivery roll and conveying, application process is carried out, followed by cooling and drying. The dry membrane or carbon-dioxide separation membrane is wound onto a winding-up roll (50) before or after crosslinking. The support is conveyed at 1 m/minute or more from the application process to the drying process. The gel membrane is formed to a thickness of 10 mu m or more. Cooling is carried out at a wet bulb temperature of 35 degrees C or less.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compound: The carbon-dioxide carrier is an alkali-metal carbonate of cesium, rubidium and/or potassium. The carbon-dioxide separation membrane contains 50 %mass or more of compound containing cesium or 15 %mass or more of compounds containing potassium, as carbon-dioxide carrier.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The composition has a viscosity of 1000 cp or more as measured using a Brookfield viscometer according to JIS Z8803, cooling the circumference of the container containing the composition with ice water at 0 degrees C within 700 seconds after cooling start. Preferred Composition: The polysaccharide is agar. The content of polysaccharide is 10 %mass or less, preferably 0.3-5 %mass. The water-absorbing polymer is polyvinyl alcohol-polyacrylic acid copolymer. The composition further contains an amino acid having a logP value of -2.5 or less. The amino acid is glycine and/or serine.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The glass frit has thermal expansion coefficient of (55-85)x 10-7/ degrees C at 30-300 degrees C, and softening point of 550-650 degrees C.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The active layer contains fullerene derivative compound and conjugated polymer. Preferred Property: The pH of the application solution is 3-9.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The thin film is a crystalline thin film comprising indium-gallium phosphide (In0.5Ga0.5P), gamma -indium selenide (( gamma )-In2Se3), indium sulfide (In2S3), copper-indium-gallium sulfide (CuIn1-xGaxS), gallium arsenide, cadmium telluride, copper-indium sulfide (CuInS2), copper-indium-gallium selenide (CuIn1-xGaxSe) and/or copper-zinc-tin sulfide (Cu2ZnSnS4). The atomic ratio of copper to indium in the raw material solution is 0.85-1.4.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method further comprises forming the at least one halide ion by solvolysis of the at least one compound. Preferred Components: The first atom comprises at least one of a boron atom, a phosphorus atom, a silicon atom, a carbon atom (all preferred), a nitrogen atom, a sulfur atom, and a selenium atom. The first metal comprises at least one element from international union of pure and applied chemistry (IUPAC)Group 11 or at least one coinage metal and silver.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The halide ion comprises at least one chloride ion or bromide ion. The compound is capable of forming at least one carbocation. The compound comprises at least one of diethyldichlorosilane, phenylphosphonic dichloride, dichlorophenylborane, and triphenylmethyl chloride. EXAMPLE - Ethylene glycol (EG) (280 ml), 52 mM solution of diethyldichlorosilane (0.20 g) in EG and a 3 mM solution of iron (II) acetylacetone (3.3 g) in ethylene glycol were added to a 500 ml of reaction flask. The solution was stripped of at least some dissolved gases by bubbling nitrogen (N2) into the solution for at least 2 hrs using a glass pipette at room temperature with mechanical stirring while at 100 rpm. Solutions of 0.77 M polyvinylpyrrolidinone in EG and 0.25 M silver nitrate in EG were degassed with N2, then 20 ml syringes of each were prepared. The reaction mixture was heated to 145 degrees C under N2, then the silver nitrate and PVP solutions were added at a constant rate over 25 minutes and worked up to give a silver nanowire.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: Chlorine (Cl2) reacts with ferrous chloride (2FeCl2) in the quench solution to obtain ferric chloride (2FeCl3). Iron fillings are added to the quench solution. Iron (Fe) reacts with ferric chloride (2FeCl3) to obtain ferrous chloride (3FeCl2), and ferrous chloride in the quench solution is restored. The quench solution further comprises chromium chloride. Before initiation of quenching reaction, the quench solution comprises 1.5 M of ferrous chloride, 0.2 M of chromium chloride and 0.1 M of hydrochloric acid. At least one source contains a source that emits light at ferrous chloride absorption peak. An indication that the quench solution has risen over the source and the corresponding detector, is provided by an absorption more than a level threshold value. The stored electrolyte solution contains ferrous chloride. Preferred System: The quench system further has a quench sensor containing source(s) and corresponding detector(s), and a pump capable of exchanging quench solution with stored electrolyte solution of a flow cell battery system.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The passivation film is made of silicon oxide, silicon nitride or aluminum oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The thin layer three-fold transition is made of indium gallium phosphide or gallium arsenide material. The individual transition is made of germanium material.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Composition: The active layer contains n-type semiconductor and p-type semiconductor.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The photoelectric conversion element material is buffer material.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The p-type semiconductor is polymeric material. Preferred Definitions:    ring 1=5-membered ring or 6-membered ring, preferably 5-membered ring.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass frit comprises (in mol%) bismuth oxide (20-55), silicon dioxide (10-50, preferably 16-26), boron trioxide (1-10 or 10-30), lithium oxide-sodium oxide-potassium oxide (5-35), potassium oxide (0.5-3 or 5-15), sodium oxide (0.01-3 or 16-28, preferably 5-15), lithium oxide (1-8), phosphorus pentoxide (0.2-8), titanium dioxide (15-35 or 1-5), vanadium pentoxide (1-16), alumina (0.5-2.5), zinc oxide (21-31), zirconia (1-5) and fluorine (0.5-15).    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The oxide is silver oxide, aluminum oxide, bismuth oxide, cobalt oxide, chromium oxide, copper oxide, iron oxide, potassium oxide, lithium oxide, manganese oxide, nickel oxide, silicon oxide, tin oxide or vanadium oxide, preferably cobalt oxide. The content of oxide is 100 ppmw to 10 weight%, preferably 500 ppmw to 8 weight%, more preferably 1000 ppmw to 7 weight%. The content of organometallic compound is 0.05-5 weight%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Gas: The inert gas is nitrogen, argon or helium. Preferred Process: The polishing is carried out after annealing treatment. The shape of the target is cylindrical, spherical or rectangular. The distance between substrate and spray nozzle is 20-150 mm.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The substrate is made of aluminum, aluminum alloy, copper, copper alloy and/or steel. The CIG type alloy powder is copper-indium-gallium alloy powder, copper-gallium alloy powder or copper-indium alloy powder. The size of CIG type alloy powder is 5-100 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The etching agent comprises hydrogen fluoride. The silicon oxidizing agent is hydrogen peroxide, carbon dioxide, ozone, potassium dichromate, chromium trioxide, potassium iodate, potassium bromate, sodium nitrite, nitric acid or potassium permanganate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The dye mixture layer contains titanium dioxide, carbon nanotubes, graphene or conductive metal.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The primary electrode layer and secondary electrode layer comprise conductive organic compound.    TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Composition: The lower plate is paper which is coated with heat-resistant material.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Method: In step (B), the reaction is conducted at 200-240 degrees C and 8-10 MPa for 8-10 hours.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In step (A), the carbon nanotube solution has a pH of 0.24-1 and concentration of 0.5 mol/L. The amount of cerium oxide is 7-30 mass% based on 36 mass% (solid) carbon nanotube. The amount of carbamide is 30-50 mass% based on 36 mass% (solid) carbon nanotube.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The amount of acrylate is 0.2-0.5 mass% of the mass of carbon nanotube.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The method comprises:(A) dissolving carbon nanotube in water in a measuring tank made of polypropylene material in water; heating at 60-80 degrees C; adding cerium oxide; dissolving completely; adding carbamide; and stirring until dissolved completely;(B) adding the solution in step (A) into a pressure reaction kettle via PVC plastic pipeline; setting the pressure at 6.5 MPa and temperature at 300 degrees C; and adding acrylate;(C) taking the glue after finishing the reaction; washing at 16000 revolutions/minute via high-speed centrifugal machine; and repeatedly washing for 3-5 times until detecting that there is no more chlorine ion using 1 mol/L silver nitrate solution;(D) pumping the pasty glue material into a high-speed ball mill device via membrane pump; adding dispersing agent i.e. polyethylene glycol 20000; and ball milling for 2-3 hours; and(E) feeding the slurry after ball milling into comminutor to pelletize; controlling the inlet temperature at 200-250 degrees C; and controlling the discharge opening temperature at 100-150 degrees C.The amount of dispersing agent i.e. polyethylene glycol is 0.5 mass% based on the mass (solid) of glue.
TECHNOLOGY FOCUS - METALLURGY - The anti-reflection wires are made of silver nano particle.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The barium copper sulfur fluoride transparent conductive thin film is doped with potassium, rubidium or sodium, and replaced by barium copper fluoride compound (BaCuQ1F) and strontium copper fluoride (SrCuQ2F), where Q1 is selenium or tellurium and Q2 is sulfur, selenium, or tellurium.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The substrate is a plastic substrate consisting of polyethersulfone, polyethylene terephthalate and polyimide substrates.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic laminar compound is smectite. The content of inorganic laminar compound is 0.1-9 %mass with respect to 100 %mass of gas-barrier resin, inorganic laminar compound and additive.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The coupling agent is silane coupling agent having one or more organic functional groups. The crosslinking agent is crosslinking agent having hydrogen bonding groups. The content of additive is 0.3-20 %mass with respect to 100 %mass of gas-barrier resin, inorganic laminar compound and additive. The content of silane coupling agent is 0.1-10 %mass with respect to 100 %mass of anchor-coat-layer-forming resin composition. Preferred Process: An anchor-coat layer is interposed between inorganic thin film layer and gas-barrier resin composition layer using resin composition containing silane coupling agent having one or more organic functional groups.
TECHNOLOGY FOCUS - METALLURGY - The anode current collector is made of stainless steel, aluminum alloy or conductive graphite, and negative current collector is made of stainless steel, copper alloy and conductive graphite.    TECHNOLOGY FOCUS - POLYMERS - The porous organic membrane material is made of polyethylene, polypropylene, polyvinylidene fluoride or other non-conductive polymeric material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of M in active component is 5-10mol.%. The weight of the catalyst is 10-20 % of the weight of the cathode. The YSM comprises 5-20mol% of yttrium oxide and zirconium dioxide. The weight ratio of LSM and YSZ is 1-3. Preferred Components: The LSM isLa1-xSrxMnO3, where x is 0-1.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic acid is oxalic acid, tartaric acid, sucrose, formic acid or acetic acid. The reducing agent is oxalic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The calcium material is calcium carbonate, calcium nitrate or calcium oxide. The material is tungsten trioxide. The neodymium material is neodymium oxide and/or neodymium nitrate. The ytterbium material is ytterbium oxide and/or ytterbium nitrate. The mean grain size of tungstate near-infrared quantum cutting material is 100 nm-100 mu m (preferably 0.5-30 mu m). Preferred Process: The pre-calcining is performed for 2-3 hours; and calcining for 3-5 hours.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The reaction gas is formed from a group consisting of inert gas, oxygen gas, helium gas, neon gas, argon gas and nitrogen gas.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The (meth)acrylic acid ester monomer mixture (( alpha )1) contains 90-99.9 %mass of (meth)acrylic acid ester monomer, and polyfunctional monomer (0.1-10).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The first and third conductive layers are made of indium tin oxide, zinc oxide-aluminum, fluorinated tin oxide, tin oxide, titanium oxide, zinc sulfide, indium gallium zinc oxide and silicon oxide. The second conductive layer is made of aluminum, silver, gold, chromium, copper and titanium. An adhesion promoter layer is made of chromium, titanium and zinc oxide.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The conducting device has a metallic/organic interface, where the surfaces (S) and (S1) are separated by a distance of 10-500 (preferably 50-200) nm, and the organic material species comprising the organic supramolecular fibrillar fills the distance between the two surfaces (S) and (S1). The supramolecular fibrillar organic species are oriented as parallel beam of nanowires extending radially with respect to conductive surfaces (S) and (S1). The supramolecular fibrillar organic species has a length corresponding to the distance separating the surfaces (S) and (S1) of two metallic materials. Preferred Method: The conductive surface (S) and (S ') are separated by 1 micron or less. The step (E) is followed by a step (E1) comprising removing the solvent employed in step (E). The irradiation process of step (E) is effected by subjecting the medium of step (E) to solar radiation.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent used in step (E) is a chlorinated solvent, preferably chloroform, dichloromethane or 1,1,2,2-tetrachloroethane. Preferred Definitions:    A1, A2 = -O-;    R1, R2 = benzyl or 1-18C alkyl;    R = -CH2-A; and    A = H, halo or 1-8C alkyl.    SPECIFIC COMPOUNDS - The use of N-(4-(bis(4-octoxyphenyl)amino)phenyl)-2-chloro-acetamide of formula (Ia), N-(4-(bis(4-octoxyphenyl)amino)phenyl)acetamide, N-(4-(bis(4-octoxyphenyl)amino)phenyl)octanamide, N-(4-(bis(4-benzyloxyphenyl)amino)phenyl)acetamide and N-(4-(bis(4-benzyloxyphenyl)amino)phenyl)-2-chloro-acetamide is specifically claimed as (I).
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The resin component contains inorganic particles. Preferred Definitions:    Z=tetravalent organic group of formula (X);    R6-R10=1-10C monovalent organic group;    t,u=0-3;    Y'=divalent organic group of formula (XI) or (XII);and    v,w,x=0-4.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of siloxane derivative (C) which has two or more epoxy groups in a molecule is 5-60 weight% with respect to the 100 wt.% of component (A), component (B) and component (C). The alicyclic epoxy group of the alicyclic epoxy compound is cyclohexene oxide group. The alicyclic epoxy compound (A) is 7-oxabicyclo(4.1.0)hept-3-yl-methyl-7-oxabicyclo(4.1.0)heptane-3-carboxylate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The curable resin composition further contains curing catalyst.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: Sputtering target for forming film (II) and film (III) contains zinc oxide as a main component, and one or more additional element chosen from aluminum or gallium. The sputtering target satisfies relation: -(Al)+0.3 less than or equal to (Ga) less than or equal to -2.68x (Al)+1.74, where Al is atomic ratio of aluminum with respect to total amount of aluminum and zinc, and Ga is atomic ratio of gallium with respect to total amount of zinc and gallium. The ratio of hydrogen with respect to argon and hydrogen is 0.43 or less. The laminate has transmittance of 10% or less after heat-processing in hydrogen atmosphere at 500 degrees C, and haze rate of 8% or more. The film (I) contains indium oxide as main component and metallic element chosen from tin, titanium, tungsten, molybdenum, zirconium, cerium or gallium. The atomic ratio of tin with respect to total amount of indium and tin in film (I) is 15 atomic% or less. The atomic ratio of titanium with respect to total amount of indium and titanium in film (I) is 5.5 atomic% or less.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The method further comprises: controlling the temperature of the rotatable substrate support; flowing gas and liquid through the rotatable substrate support to control its temperature; traversing the sheet-like flexible substrate back and forth along its longitudinal axis relative to the high frequency induction coupled plasma torch; rotating the sheet-like flexible substrate about its longitudinal axis relative to the high frequency induction coupled plasma torch; and cutting the solar cell modules into smaller portions to be mounted on a substrate for producing a solar cell panel. The depositing at least one thin film layer, comprises: depositing at least one of a n-type doped silicon layer, a i-type doped silicon layer, and a p-type doped silicon layer on the outer surface of the sheet-like flexible substrate. The depositing at least one thin film layer further comprises depositing a thin film layer of transparent conductive metal oxide on the outer surface of the sheet-like flexible substrate after the deposition of the at least one thin film layer. Preferred Components: The silicon thin film solar cell modules are p-i-n or n-i-p type layered structures.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The source chemical is silicon tetra chloride, trichlorosilane, silane, tetrafluorosilane, other silicon containing compound, phosphine, diborane, germane, germanium tetra chloride, germanium tetra fluoride or other germanium containing compounds. The source chemicals are in a form of gas, vapor, aerosol, small particle or powder. The transparent conductive metal oxide is an oxide of indium, tin or zinc. The plasma gas is helium, neon, argon and/or hydrogen. EXAMPLE - No suitable example is given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The salt mixture further comprises lithium and/or calcium nitrate. The amount of barium nitrate is 0.01-30 mol.%. EXAMPLE - None given.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The transistor further comprises: a gate electrode (14) on a substrate (12); a source electrode (17a) and a drain electrode on a substrate, the source electrode and the drain electrode facing each other and defining a channel region; an insulation layer (16) on the substrate, the insulation layer electrically insulates the source electrode, the drain electrode, and the gate electrode; and an active layer in between the source electrode and the drain electrode, where the active layer includes the organic semiconductor compound or the organic semiconductor polymer.    TECHNOLOGY FOCUS - POLYMERS - Preparation: No preparation method is given. Preferred Components: (II) has a number average molecular weight of 5000-200000. Preferred Definitions:    R7, R8 = thiophenyl, thiazolyl, thiadiazolyl, isoxazolyl, oxadiazolyl, imidazolyl, pyrazolyl, trizolyl, tetrazolyl, pyridyl, pyridazinyl, quinolinyl, isoquinolinyl, quinoxalinyl, naphthyridinyl, benzoimidazolyl, pyrimidopyrimidinyl, benzothiadiazolyl, benzoselenadiazolyl, benzotriazolyl, benzothiazolyl, benzoxazolyl, phenanthrolinyl, phenazinyl or phenanthridinyl; and    Ar1, Ar2 = phenylene, thiophene, benzothiophene, thienothiophene, thiazole, thiazolothiazole, fluorene or carbazole (all optionally substituted).    SPECIFIC COMPOUNDS - 1 Compound (I) is disclosed i.e. 2,6-di-tert-butyl-4,8-di(2-thienyl)-pyreno(4,5-b:9,10-b')dithiazole of formula (Ia).    EXAMPLE - Cesium carbonate (9.3 g) was added to a stirred solution of N,N'-(5,10-dibromo-2,7-di-tert-butylpyren-4,9-diyl)dithiophene-2-carbothioamide (7.2 g) in dimethylformamide (120 ml). The reaction mixture was heated at 120 degrees C for 3 hours. After the reaction was complete, it was cooled to room temperature and water was added to it. The precipitate was filtered and washed with dichloromethane to give 2,6-di-tert-butyl-4,8-di(2-thienyl)-pyreno(4,5-b:9,10-b')dithiazole as a yellow solid (4.5 g).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The high-molecular compound having repeating unit (III) is obtained by polymerizing bivalent group-containing compound (I), and bicycloheptane-containing compound of formula (V). The high-molecular compound having repeating unit (III) and repeating unit (IV) is obtained by polymerizing bivalent group-containing compound (I), aromatic compound (II), and boronic-acid residue or borate residue-containing compound of formula: A'-C'-B' (VI), or bivalent group-containing compound (I), aromatic compound (II) and bicycloheptane-containing compound (V), or bivalent group-containing compound (I), aromatic compound (II), boronic-acid residue or borate residue-containing compound (VI) and bicycloheptane-containing compound (V). Preferred Definitions:    Y'=group chosen from 8 groups e.g. -O-, -C(=O)-C(=O)-, or group of formula (i)-(iii);    R3,R4,R13=H or substituent;    X1=halo;and    A',B'=group chosen from 8 groups e.g. -B(-OMe)2, -B(-OEt)2 or group of formula (iv)-(vi).    EXAMPLE - 15,16-Dimethyl-4,11-dibromotetracyclo(6.6.2.02,7.09,14)hexadeca-2(7),3,5,9(14),10,12-hexaene-15,16-dicarboxylate (in g) (4.802) and bis(pinacolato)diboron (10.16) were added to dioxane solution (150 mL) and stirred at room temperature. (1,1'-Bis(diphenylphosphine)ferrocene)dichloropalladium (II) (408.3 mg), 1,1'-bis(diphenylphosphine)ferrocene (277.2 mg) and potassium acetate (3.926) were added to mixture and reacted for 7 hours. The mixture was filtered and distilled to obtain 15,16-dimethyl-4,11-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)tetracyclo(6.6.2.02,7.09,14)hexadeca-2(7),3,5,9(14),10,12-hexaene-15,16-dicarboxylate (3.5), with yield of 60.9% and purity of 97.5%.
Preferred Definitions:    X1=N.    SPECIFIC COMPOUNDS - 377 phenanthrene derivatives are specifically claimed e.g. 2,6-di-phenanthren-9-yl-4-(4-quinolin-2-yl-phenyl)-benzo(h)quinoline of formula (Ia), 2,6-di-phenanthren-9-yl-4-(4-phenanthridin-6-yl-phenyl)-benzo(h)quinoline, 2,6-di-phenanthren-9-yl-4-pyridin-4-yl-benzo(h)quinoline, 2,6-di-phenanthren-9-yl-4-(4-pyridin-2-yl-phenyl)-benzo(h)quinoline and 2,6-di-phenanthren-9-yl-4-(4-pyridin-3-yl-phenyl)-benzo(h)quinoline.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The nitrogen-containing compound (I) is preferably of formula (II)-(IV).X6-X8=N or CR';andR5,R6=R1. SPECIFIC COMPOUNDS - 99 Nitrogen-containing compounds e.g. 1-(4-(4,6-diphenylpyridin-2-yl)phenyl)-2-phenyl-1H-1,3-benzodiazole of formula (Ia), 1-(4-(4,6-bis(naphthalen-2-yl)pyridin-2-yl)phenyl)-2-phenyl-1H-1,3-benzodiazole, 1-(4-(4,6-bis(phenanthren-9-yl)pyridin-2-yl)phenyl)-2-phenyl-1H-1,3-benzodiazole, 1-(4-(4,6-diphenylpyridin-2-yl)phenyl)-2-(naphthalen-2-yl)-1H-1,3-benzodiazole, and 1-(4-(4,6-bis(naphthalen-2-yl)pyridin-2-yl)phenyl)-2-(naphthalen-2-yl)-1H-1,3-benzodiazole are specifically claimed.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. SPECIFIC COMPOUNDS - 6 Compounds (I) are specifically claimed, e.g. 3-(3,5-bis-carbazol-9-yl-phenyl)-9-(6-phenyl-pyridin-2-yl)-9H-carbazole of formula (A), 3-(3,5-bis-carbazol-9-yl-phenyl)-9-(4,6-diphenyl-pyrimidin-2-yl)-9H-carbazole, 3-(3,5-bis-carbazol-9-yl-phenyl)-9-(4,6-diphenyl-(1,3,5)triazin-2-yl)-9H-carbazole, 3-(3,5-bis-carbazol-9-yl-phenyl)-9-(4-pyridin-2-yl-phenyl)-9H-carbazole and 3-(3,5-bis-carbazol-9-yl-phenyl)-9-(4-(4,6-diphenyl-pyrimidin-2-yl)-phenyl)-9H-carbazole.    EXAMPLE - (In g) bromocarbazole (43.76) in dimethylformamide (100 ml) was coupled with 2-chloro-4,6-diphenylpyrimidine (57.13) in presence of sodium hydride to obtain 9-(4,6-diphenyl-(1,3,5)triazin-2-yl)-9H-carbazole (82.0). The obtained compound was reacted with 2-(3,5-di-carbazolyl-phenyl)-4,4,5,5-tetramethyl-(1,3,2)dioxaborolane (10.09) in the presence of tetrakistriphenyl phosphine palladium (1.82) under reflux, to obtain 3-(3,5-bis-carbazol-9-yl-phenyl)-9-(6-phenyl-pyridin-2-yl)-9H-carbazole (8.90) with yield of 70%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The concentration of hydrochloric acid in the hydrochloric acid elution process is 9 %mass or more.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The method further involves extracting esterified adipate to an organic solvent, calculating the amount of adipate extracted from the analytical curve of the adipate in the extraction process, and computing adipic acid by conversion calculation. Preferred Composition: The organic solvent is a mixed solvent of n-hexane and dichloromethane. The amount of adipate in the calculation process is calculated by gas chromatography mass spectroscopy.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The tin or tin precursor is tin, tin oxide, tin nitrate and/or tin acetate. The substrate is silicon substrate, silicon oxide substrate, silicon nitride substrate, gallium nitride substrate, scandium-aluminum-magnesium oxide substrate, lithium-niobate substrate, zinc oxide substrate and/or sapphire substrate.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The solvent (a) is tetrahydrofuran, ethyl ether, dichloromethane, trichloromethane and/or ethyl acetate. The molar content of 2-i-propoxy-4,4,5,5-tetramethyl-1,3,2-dioxaborolan is 2-4 times with respect to molar amount of the 2,7-dibromo-9,9-dialkyl fluorine. The solvent (b) is benzene, chlorobenzene, toluene, ethylene glycol dimethyl ether, tetrahydrofuran, ethyl ether, dichloromethane, trichloromethane and/or ethyl acetate. The catalyst is a mixture of organopalladium and organic phosphorus ligand. The amount of catalyst is 0.0002-0.2 times of that of content of 2,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan)-9,9-dialkyl fluorine. The base solution is aqueous solution of sodium hydroxide, aqueous solution of sodium carbonate, aqueous solution of sodium bicarbonate or aqueous solution of tetraethyl ammonium hydroxide. The molar amount of base in base solution is 2-20 times with respect to molar amount of 2,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan)-9,9-dialkyl fluorine. The organopalladium is palladium tetra(triphenylphosphine)?palladium(II) acetate?tris(dibenzylideneacetone)dipalladium(0) or bis(triphenylphosphine)palladiumchloride. The organic phosphorus ligand is tricyclohexyl phosphine and/or tri(o-tolyl)phosphine. Preferred Definitions:    R1,R2=6-17C alkyl;and    m=6-12.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The cesium is cesium carbonate, cesium azide, cesium, and cesium iodide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The anti-releasing layer has a droplet contact angle of 60 degrees or more. The graphene laminate has a surface resistivity of 5 k Omega /square or less. The graphene laminate consists of substrate/blocking layer/graphene layer/metal catalyst layer/graphene layer/blocking layer structure.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The hydrophobic portion has 1-50C alkyl group, 4-60C cycloalkyl, and/or 6-60C aryl. The polar portion has hydroxyl group, carboxylic acid group, sulfonic acid group, amino group, carbonyl group, cyano group, and/or halo group. The blocking layer contains acrylate type component, epoxy type component, ethylene-vinyl acetate type component, polyvinyl chloride type component, polyurethane type component, phenol-derived component, polyester type component, polyether type component, polysulfide type component, polyimide type component, and/or polyamide type component, and compound having carbonyl-containing structure of formula (III) and compound having ester-containing structure of formula (IV).R3=hydroxy, carboxy, sulfonic acid group, amino, carbonyl, cyano, or halo;X3,X4=H or 1-5C alkyl;andR4=1-10C linear or branched alkyl.The substrate comprises polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyethersulfone, polycyclic olefin, polyacrylate, polyetheretherketone, and/or polyimide. The composition has a glass transition temperature of 10-80 degrees C. The composition contains (in mol%) compounds (I) and/or (II) (60-95), compound (III) (2-20), and compound (IV) (3-20).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The (meth)acrylic acid ester monomer mixture (AB1) contains (meth)acrylic acid ester monomer (90-99.9 %mass) and polyfunctional monomer (0.1-10 %mass).
TECHNOLOGY FOCUS - METALLURGY - Preferred Components: The metallic glass further comprises at least one of second element having resistivity less than about 100 ohms; third element to form solid solution with conductive powder; and fourth element having absolute value of Gibbs free energy of oxide formation that is about greater than or equal to 100 kJ/mol. Second element, third element, and fourth element are copper (Cu), zirconium (Zr), and tin (Sn). First element is phosphorus (P), antimony (Sb), beryllium (Be), boron (B), thorium (Th), erbium (Er), terbium (Tb), promethium (Pm), dysprosium (Dy), yttrium (Y), samarium (Sm), gadolinium (Gd), holmium (Ho), neodymium (Nd), cerium (Ce), lanthanum (La), calcium (Ca), ytterbium (Yb), europium (Eu), strontium (Sr), barium (Ba), potassium (K), rubidium (Rb), and/or cesium (Cs).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The optical filter is made of zirconium oxide, silicon dioxide, magnesium fluoride or aluminum. The photovoltaic element is made of copper indium gallium selenide, cadmium telluride or gallium indium phosphide.
TECHNOLOGY FOCUS - METALLURGY - The conductive material is aluminum, chromium, silver, platinum, copper, titanium, nickel, rhodium, cobalt, magnesium, iron, zirconium, molybdenum, palladium, hafnium, iridium, tungsten, tantalum, indium tin oxide (ITO), polysilicon and graphite.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition ratio of copper-indium-gallium selenide is 1-20%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The solar cell further comprises a reflective metal layer located adjacent the opposite side.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The absorbing layer is dye sensitized or organic.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The volume ratio of high-boiling-point solvent and low-boiling-point solvent is 95:5-20:80.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The diffusion-restraining layer is made of zinc oxide, tin oxide, titanium oxide, zirconia, hafnium oxide, vanadium oxide, niobium oxide, zinc nitride, tin nitride, titanium nitride, zircon nitride, hafnium nitride, vanadium nitride and/or niobium nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The second material comprises a material consisting of silicon nitride (SixNy), silicon carbide, silicon and/or silicon dioxide. The monolithic crucible body comprises less than 5 vol.% of aluminum. The coating layer comprises silicon, silicon nitride, and silicon oxynitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: In the polycrystal, the average grain size is 100 nm or more. The surface roughness of the surface which contacts the substrate of the silver reflecting film is less than 1 nm. The surface roughness of the surface of silver reflecting film is more than 10 nm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The reducing agent is tripropylene glycol n-butyl ether.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The element (A), element (B') and element (C') has solubility at 20 plus minus 15 degrees C. Preferred Composition: The element (C') does not have valency of II. The solvent is polar solvent (II) and/or non-polar solvent (BB). The reducing agent is hydride reducing agent, hydrazine, oxalic acid, ascorbic acid, formaldehyde, acetaldehyde and/or sodium sulfite.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The optical semiconductor is manufactured using reduction inhibitor containing element chosen from tin, titanium, indium and germanium. The mixed ratio of niobium compound and reduction inhibitor is 1-5. The nitridation process is performed at 773-1023K. Nitrogen compound gas used at the nitridation process contains ammonia. The velocity of circulation of the nitrogen compound gas in nitridation process is 0.05-5 cm/second. Cleaning liquid used in cleaning process contains an acidic solution or alkaline solution.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The average particle diameter of catalyst particles is 3-7 nm. Preferred Composition: The catalyst particles contain platinum or its alloy.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The photoelectric conversion element consists of indium, gallium, nitrogen, gallium phosphide, gallium arsenide, neodymium gallate, lithium metagallate, magnesium and aluminum, zinc oxide, silicon, silicon carbide, and silicon and germanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The sealing glass consists of bismuth system glass which contains zinc oxide, bismuth oxide and boric oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal salt contained in the metal salt-containing composition is chosen from magnesium, calcium, strontium, barium, yttrium, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, iron, nickel, copper, silver, zinc, aluminum, gallium, indium, tin and antimony, preferably zinc. The metal salt is nitrate, sulfate, carboxylate, halide, alkoxide, and acetylacetone. The metal salt-containing composition is also used for formation of the gate insulating layer. The metal salt contained in the metal salt-containing composition is barium, yttrium, zirconium, hafnium, tantalum and/or aluminum. The metal oxide is amorphous oxide. Preferred Properties: The arithmetic mean roughness of the surface of the channel layer is 10 nm or less. The metal oxide has density of 4-5.5 g/cm3.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The polyhydric carboxylic acid is maleic acid, citraconic acid, phthalic acid and/or trimellitic acid.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The hydrocarbon fuel is 4C or less hydrocarbon compound.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The Lewis acid catalyst is metal-containing Lewis acid chosen from gallium(III) chloride, gallium(III) bromide, indium chloride, indium bromide, bismuth chloride, aluminum chloride, iron(II) chloride, iron(III) chloride, iron(II) bromide, iron(III) bromide, nickel chloride, cadmium oxide, chromium oxide, molybdenum(VI) oxide, iron(III) oxide, iron(II) sulfate and iron(III) sulfate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The halosilane is chlorosilane. The ether or ester group-containing compound is chosen from methyl tert-butyl ether, ethyl tert-butyl ether, methyl diphenylmethyl ether, methyl triphenylmethyl ether, tert-butyl acetate and diphenylmethyl acetate. The hydrolyzable silicon-containing compound does not contain hydrogen halide or acyl halide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The dielectric layers of solar cell comprises silicon oxide, aluminum oxide and titanium oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The load comprises a metal hydride consisting of magnesium borohydride or sodium borohydride.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass frit further comprises glass frit (C) having glass transition temperature (c1) lower than the glass transition temperatures (b1) and (c1). The content of glass frit (A), glass frit (B) and glass frit (C) is 5-15 parts weight, 70-95 parts weight and 5-15 parts weight, respectively, with respect to 100 parts weight of the glass frit. The total content of glass frit (A) and glass frit (C) is 5-30 parts weight, with respect to 100 parts weight of the glass frit. The content of conductive powder, organic solvent and glass frit is 50-90 parts weight, 10-50 parts weight and 3.5-4.5 parts weight, respectively, with respect to 100 parts weight of the paste composition. Preferred Property: The average particle diameter of glass frit is 1.0-2.5 mu m.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The conductive powder includes silver or aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameter: The photoelectric chemical characteristic is optical cathodic current of electron which moves to external substance from surface in outer potential position of 0 V based on silver/silver chloride electrode reference. The composition ratio of nitrogen which has peak in 396.5 eV plus minus 0.5 V in N1s shell spectrum of X-ray photoelectron spectroscopy (XPS) is 0-1%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Base is metal hydride. Alkaline earth metal salt is magnesium halide. Base and alkali metal salt or alkaline earth metal salt is alkyl magnesium halide. Iron catalyst is bivalent iron salt or trivalent iron salt.
TECHNOLOGY FOCUS - ELECTRONICS - Preparation: No preparation method is given. Preferred Components: The electroactive layer is a hole transport layer (130). The hole transport layer comprises (I). The electroactive layer is an electroactive layer comprising a host compound having (I) and a dopant. Preferred Definitions:    Ar1, Ar2 = phenyl, biphenyl, terphenyl or deuterated derivatives; and    a = 0.    SPECIFIC COMPOUNDS - 3 Compounds (I) are specifically disclosed i.e. 1,1,1',1'-tetramethyl-N5,N5'-bis(2-methyl-4-phenyl-phenyl)-N5,N5'-bis(2-methyl-4-(3-phenylphenyl)phenyl)-3,3'-spirobi(indane)-5,5'-diamine of formula (Ia), 1,1,1',1'-tetramethyl-N5,N5'-bis(4-phenylphenyl)-N5,N5'-bis(4-(3-phenylphenyl)phenyl)-3,3'-spirobi(indane)-5,5'-diamine and N5,N5'-bis(4-(4-bromophenyl)phenyl)-1,1,1',1'-tetramethyl-N5,N5'-bis(4-phenylphenyl)-3,3'-spirobi(indane)-5,5'-diamine.    EXAMPLE - Under an atmosphere of nitrogen a vial was charged with 1,1,1',1'-tetramethyl-N5,N5'-bis(4-phenylphenyl)-3,3'-spirobi(indane)-5,5'-diamine (0.73 g), 4,4'-iodobromobiphenyl (0.902 g), tris(dibenzylideneacetone)dipalladium (0.044 g), 1,1'-bis(diphenylphosphino)ferrocene (0.053 g) and toluene (40 ml). The resulting solution was stirred for 10 minutes followed by addition of sodium t-butoxide (0.242 g). The reaction was heated to 90 degrees C for 22 hours. After cooling to room temperature, the resulting thick solution was diluted with toluene (-100 ml) and filtered through a silica pad. Evaporation of the volatiles and purification on silica using a mixture of dicholoromethane and hexane (40%) to give N5,N5'-bis(4-(4-bromophenyl)phenyl)-1,1,1',1'-tetramethyl-N5,N5'-bis(4-phenylphenyl)-3,3'-spirobi(indane)-5,5'-diamine (0.479 g).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No preparation method is given. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The nanorods comprises material selected from zinc oxide, titanium oxide, gallium nitride, gallium arsenide, gallium phosphate.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: Fullerene is processed substantially in liquid phase. Functionalization is a process of chemical reaction selected from cyclopropanation, cycloaddition, organometallic addition, 1,3-dipolar cycloaddition, diels-alder(2+4) cycloaddition, and Grignard addition. The process consists of at least 2 reaction steps performed at different reaction temperatures, having at least one temperature more than other temperature. The process is carried out in a tubular reactor and/or continuous stirred tank reactor and is automated using at least one process control system. The process comprises thermal and/or photochemical isomerization. The reactants are premixed in a solvent before being introduced into a reactor. Functionalization further contains in situ deprotonation and diazo compound generation using soluble organic base. Excess of soluble organic base relative to diazo compound precursor is utilized. The process comprises a single reaction step or multiple reaction steps, which are performed under superheated conditions, where pressure in the process is greater than atmospheric pressure. The process does not contain nickel oxide. Preferred Composition: The soluble base is a cyclic or hindered amine derivative or its mixture. The solvent is an aromatic aprotic solvent.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The soluble molybdenum compound is chlorine acid, sodium molybdate or potassium molybdate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The chitosan has molecular weight of 10000-500000 g/mol. The platinum nano colloid solution is prepared by mixing ethylene glycol solution and soluble molybdenum compound, adjusting pH value of the solution to 10-14, heating at 80-190 degrees C the solution for 30 minutes in the presence of air or inert gas, and cooling to room temperature with a temperature gradient of 10 degrees C/minute. The acetic acid has a mass concentration of 10%. The ethylene glycol solution has a mass concentration of 20-90%. The solvent is ethanol aqueous solution, ethylene glycol, isopropyl alcohol or acetone.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No preparation method given. Preferred Compounds: Compounds (I) are one or more of 7 compounds, e.g. of formulae (I1), (I2) and (I3)A1-A3=5-25C aromatic or heteroaromatic (which is mono- or polycyclic, i.e. which may also contain two or more individual rings that are connected to each other via single bonds, or contain two or more fused rings, and where each ring is optionally substituted with one or more groups L).Preferred Composition: The formulation comprises one or more organic binders or precursors, having permittivity at 1000 Hz of 3.3 or less, and optionally one or more solvents. Preferred Definitions:    R1+R2, R2+R3, R3+R4, R5+R6, R6+R7, R7+R8, A1-A3=benzene, furan, thiophene, selenophene, pyrrole, pyridine, pyrimidine, thiazole, thiadiazole, oxazole, oxadiazole, selenazole, thieno(3,2-b)thiophene, dithieno(3,2-b:2' ,3'-d)thiophene, selenopheno(3,2-b)selenophene, selenopheno(2,3-b)selenophene, selenopheno(3,2-b)thiophene, selenopheno(2,3-b)thiophene, benzo(1,2-b:4,5-b')dithiophene, 2,2-dithiophene, 2,2-diselenophene, dithieno(3,2-b:2',3'-d)silole, 4H-cyclopenta(2,1-b:3,4-b')dithiophene, benzo(b)thiophene, benzo(b)selenophene, benzooxazole, benzothiazole, benzoselenazole (optionally substituted with one or more groups L).    EXAMPLE - 1-Butanol (300 cm3) was added to 1,4-benzoquinone (1109 g) and vinyl-benzene (233 cm3), and was heated at reflux for 17 hours. The mixture was allowed to cool and solvent removed in vacuo. The residue was purified by silica plug (dichloromethane) and then recrystallized twice from acetonitrile to give dibenzo(a,h)anthracene-7,14-dione as orange solid (5.0 g).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The methanol fuel cell comprises anode catalyst and cathode catalyst. The anode catalyst contains platinum/activated carbon or platinum-ruthenium/ activated carbon or platinum-ruthenium black or ruthenium /activated carbon, and osmium, iridium, tungsten, tin, and/or molybdenum. The cathode catalyst contains platinum/activated carbon or ruthenium/activated carbon. The exchange membrane contains cross-linked polymer or polymer. The methanol fuel cell catalyst is load-type catalyst. The carrier is silica, aluminum trioxide and/or porous carrier. The carbon nanotube is activated carbon. The active component is platinum, ruthenium, palladium, gold, silver, and/or iridium. The content of the active component is 1-40% of the total weight of the catalyst. The heteropoly acid comprises 11 oxide composite e.g. hydrogen-phosphorus-tungsten oxide composite (H3PW12O40), hydrogen-silicon-tungsten oxide composite (H1SiW12O10), hydrogen-phosphorus-molybdenum oxide composite (H3PMo12O10), hydrogen-silicon-molybdenum oxide composite (H1SiMo12O10), and hydrogen-germanium-tungsten oxide composite (H1GeW12O10). The proton exchange membrane is perfluorinated sulfonic acid proton exchange membrane, radiation grafting film or high- fluoride film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The protective layer comprises gold oxide, platinum oxide, iridium oxide, palladium oxide, osmium oxide, rhodium oxide, molybdenum nitride, nickel nitride, chromium nitride, titanium nitride, iron nitride, aluminum nitride, boron nitride and carbon nitride. The flexible substrate comprises iron, silver, gold, copper, chromium, tungsten, aluminum, molybdenum, zinc, nickel, platinum, palladium, cobalt, indium, manganese, silicon, tantalum, titanium, tin, zinc, lead, vanadium, ruthenium, iridium, zirconium, rhodium and magnesium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The planarization layer comprises polyester copolymer, polystyrene copolymer, polyimide copolymer, polyacrylic acid copolymer, polyamid acid copolymer, polyamine copolymer, polyvinyl alcohol copolymer and polyallyl amine copolymer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The method involves further utilizing initiator and terpineol. The initiator is scandia stabilized zirconia.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The mole ratio of gadolinium and samarium to the cerium is 2:8.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconductor nanocrystal-polymer composite further contains inorganic precursor. The inorganic precursor is silicon, titanium, zinc, indium and/or tin.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent is organic solvent. The ketone is gamma -butyrolactone, cyclohexanone, 3-hexanone, 3-heptanone, 3-octanone, acetone and/or methyl ethyl ketone. The alcohol is styrene, chloroform, toluene, dimethyl formaldehyde, tetrahydrofuran, dimethyl sulfoxide, acrylate, N-methypyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, methanol, ethanol, 2-methyl-1-butanol and/or 2- methyl-2-butanol. The solvent is preferably ketone, tetrahydrofuran and/or trichloroethane.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer membrane is thermoplastic polymer and conducting polymer, or poly vinyl carbazole, polyvinyl alcohol, polymer, polyolefin, polylaurylmethacrylate, polymethyl (meth)acrylate, polyester, polycarbonate, poly(meth)acrylic acid, polyacrylamide, polyalkylene glycol, chitosan and polyvinyl pyrrolidone of aromatic vinyl monomer or polyaniline, polyphenylene, polypyrrole, polyacetylene, polyacene, polythiophene, polyalkylthiophene, polyphenylene, poly(phenylene sulfide), poly (vinylene phenylene) and/or polyfuran.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The atomic ratio of low-valent metal and zinc is 0.02-0.1. The specific resistance of oxide transparent conductive film is 2x 10-3 Omega .cm or less. The low-valent metal oxide is chosen from low-valent titanium oxide, low-valent niobium oxide, low-valent tantalum oxide and low-valent molybdenum oxide. The low-valent titanium oxide is of formula: TiO2-x, where x is 0.1-1, preferably TiO(II), Ti2O3(III), Ti3O5, Ti4O7, Ti6O11, Ti5O9 and Ti8O15. The low-valent niobium oxide is chosen from NbO(II), Nb2O3(III) and NbO2(IV). The low-valent tantalum oxide is chosen from TaO2(IV) and Ta2O3(III). The low-valent molybdenum oxide is chosen from MoO2(IV) and Mo2O3(III). The average light transmittance transparent electrode film at wavelength of 780-1500 nm is 85% or more, and surface resistance of 20 Omega /square or less. The solar cell has a light absorption layer (2) containing copper indium selenide, copper indium sulfide, copper gallium selenide, copper gallium sulfide, cadmium tellurium, their solid solution, copper zinc sulfide, copper tin sulfide, copper zinc selenide, copper tin selenide or their solid solution.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The first, second and third TCO layers are separately made of a material selected from indium tin oxide (ITO); zinc oxide (ZnO); aluminum zinc oxide (AZO or ZnO:Al); and tin dioxide doped with fluorine (SnO2:F). The nano-particles are metal particles and the metal particle is preferably selected from gold (Au) particle and an Ag particle. The nano-particles are dielectric particles and the dielectric particle is preferably selected from silicon dioxide (SiO2) particle, silicon nitride (Si3N4) particle and a titanium dioxide (TiO2) particle. The thin-film solar cell is selected from silicon (Si) thin-film solar cell; heterojunction solar cell having intrinsic thin layer (HIT solar cell); an organic thin-film solar cell; and a copper indium gallium diselenide (CuInGaSe2) thin-film solar cell.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The formation of mask comprises forming silicon nitride mask side and backlight surface of crystal silicon substrate or silicon substrate. Plasma-enhanced chemical vapor deposition comprises using silane and ammonia gas as process gas or silane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The doped passivation layer is made of silicon nitride, silicon oxy-nitride, silicon oxide, silicon-rich silicon nitride, silicon-rich silicon oxide, and the dopant is made of phosphorus.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The opacifying pigment: is at least one of titanium dioxide or barium sulfate; and comprises the pigmented portion (4b) of the second layer of encapsulant (2-10 wt.%, preferably 47 wt.%), where each layer of encapsulant further comprises at least one ultraviolet light absorber. The pigmented portion of the second layer of encapsulant is 75-200 mu , preferably 125-175 mu in thickness.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The ultraviolet light absorber is at least one of benzophenone, benzotriazole or hindered amines.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The electrode layer is made of copper (Cu), silver (Ag), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti) and gold (Au). The nickel layer is removed from the seed layer by using sulfuric acid, hydrogen peroxide, nitric acid and acetic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The solvent used for performing solvent casting process is selected from methylene chloride, methyl ethyl ketone and dimethylacetamide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of titanium oxide in layers (1,3) is 0.1-10 %mass. The content of tin oxide in layers (1,3) is 0.001-10 %mass. The content of gallium oxide in layers (2,4) is 0.1-7 %mass. The content of aluminum oxide in layers (2,4) is 0.1-10 %mass. Preferred Properties: The film thickness of layer (1) is 50-300 nm. The film thickness of layer (3) is 50-1500 nm. The film thickness of layer (2) is 400-1750 nm. The film thickness of layer (4) is 50-1400 nm. The total film thickness of the transparent conductive film is 2000 nm or less. The transparent conductive layer has a surface resistivity of 7 Omega /square or less, a haze of 11% or more, an all-optical transmittance of 80% or more, and a change rate of less than 5% with respect to electroconductivity in reduction-resistant evaluation environment and total light transmittance.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent conductor is made of zinc oxides. The manufacturing of solar cell using silicon hydride, hydrogen and diborane as noble gas.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The heat insulating material has bulk density of 0.2-1.5 g/cm3, pore volume 0.5-2 mL/g, and ratio of accumulating pore volume of pore having pore diameter of 0.05-0.5 mu m and accumulating pore volume of pore having pore diameter of 0.003-150 micrometer of 70% or more. Preferred Composition: The heat insulating material further contains (in %mass) infrared ray-opacification particles, inorganic fiber (0-20) and large particles (L) containing element (e1) (0.005-5) chosen from alkali metal element, alkaline-earth metal element and germanium, and has heat conductivity of 0.2 W/m.K or less at 800 degrees C. The content of infrared ray-opacification particles having average particle diameter of 0.5-30 mu m in heat insulating material is 0.1-39.5 %mass. The content of germanium in heat insulating material is 10-1000 mass ppm. The heat insulating material contains phosphorus (0.002-6), and iron (0.005-6).    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The heat insulating material is accommodated in cover material (3) comprising resin film including inorganic fiber.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Authentic amorphous-silicon layer is formed between the main surface of the semiconductor substrate and semiconductor layer. Conductive layer made of indium tin oxide is formed on the surface of the semiconductor region.
TECHNOLOGY FOCUS - METALLURGY - The deposition prevention plate and shutter are made of iron, cobalt, nickel or stainless steel.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The glass has loss-of-clarity temperature of 1330 degrees C or less and Young's modulus of 84 GPa or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The compound semiconductor has compositional formula: CuxInyGa1-ySezS2-z or Cu2-x'Sny'Zn2-y'Sez'S4-z'.x,y=0-1;z,x',y'=0-2;andz'=0-4.The nanoparticles contain indium and sulfur in molar ratio of 1/8-2, preferably indium sulfide. The average particle diameter of nanoparticle is 1-200 nm. The ink contains binder containing sulfur atom, of formula: C(=S)(-R1NR2)(-R3NR4) (I).R1-R4=H or 1-10C alkyl.The buffer layer is formed by applying or printing, and heat-processing ink.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inverse structure of micro groove structure on the surface of mold contains anodically oxidized alumina. The reduced content of mold after immersing in phosphoric acid ester compound is 0.001-3 %mass. The content of phosphorus atom in the surface of transparent film is 0.001-0.14 atomic%. Preferred Properties: The pH of aqueous solution which extracts the phosphoric acid ester compound is less than 6.5. The active-energy-ray-curable composition has transmittance of 50-100%, in 500 nm when dissolving 3 parts mass of phosphoric acid ester compound, with respect to 100 parts mass of heavy synthetic compound in the active-energy-ray-curable composition.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The mold dissolution component is phosphoric acid ester compound. The phosphoric acid ester compound is polyoxyethylene alkyl phosphoric acid ester compound of formula: (HO)3-n-P(=O)-(O-(CH2CH2O)m-R1)n (I).R1=alkyl;m=1-20;andn=1-3.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Process: A precursor layer is stacked by sputtering using a target (A) containing copper and IIIb group element(s) (excluding indium) and a target (B) containing indium, and precursor is heated under an atmosphere containing a VIb group element, during production of solar cell.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The IIIb group element (excluding indium) is gallium. The Ib group element is copper. The VIb group element is selenium and/or sulfur, preferably, selenium. The ratio (A/B) of values of X/(In+X) ratio (A) of uppermost surface of the p-type semiconductor layer and X/(In+X) ratio (B) at depth at which a smallest X/(In+X) ratio in film is exhibited, is 1.4-1.8.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The dielectric layer formed in upper side of substrate consists of silicon oxide, aluminum oxide, and titanium oxide or silicon nitride.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The composition further comprises 0.1-50 weight% of cyclic compound. The alkali compound is potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethyl ammonium chloride or tetrahydroxy ethyl ammonium chloride. The surfactant is chosen from 40 surfactants e.g. polyoxyethylene alkyl cyclohexyl ether, polyoxyethylene ( beta )-naphthyl ether, polyoxyethylene castor ether, polyoxyethylene hydrogenated caster ether and polyoxyethylene lauryl ester. The cyclic compound is chosen from 67 cyclic compounds e.g. piperazine, N-methylpiperazine, N- ethylpiperazine, hydroxyethylpiperazine and N-(2-aminoethyl)piperazine. The composition further comprises 0.000001-1 weight% of fluorosurfactant chosen from 10 fluorosurfactants e.g. 1-30C alkyl carboxylate, alkyl sulfate, alkyl phosphate, alkyl quaternary ammonium salt, alkyl carboxybetaine and alkyl sulfobetaine, organic solvent chosen from ethyl alcohol, propyl alcohol, ethylene glycol, methyl ethyl ketone solution and methyl isobutyl ketone solution, and silica-containing compound chosen form colloid silica solution, sodium silicate liquid, liquid potassium silicate and liquid lithium silicate. Preferred Property: The boiling point of cyclic compound is 100 degrees C or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Graphite powder, potassium persulfate and phosphorus pentoxide are added respectively into concentrated sulfuric acid at 80 degrees C, stirred uniformly, cooled for more than 6 hours, washed till obtained product becomes neutral, dried, dried product is added into concentrated sulfuric acid (200-250 mL), potassium persulfate is added, temperature is maintained at 0-20 degrees C for 5-60 minutes, left in oil bath at 35 degrees C for 1-2 hours, deionized water containing hydrogen peroxide solution is slowing added, to obtain a mixture. The mixture is left until mixture becomes bright yellow, pumping filtration is carried out under heating, washed using hydrochloric acid, pumping filtration is carried out, and dried at 60 degrees C for 48 hours under vacuum condition, to obtain graphite oxide. Preferred Composition: The mass ratio of graphite powder, potassium persulfate and phosphorus pentoxide is 2:1:1. The amount of the potassium permanganate is 3 times of graphite powder. The mass concentration of the hydrogen peroxide solution is 30%. The molar concentration of aqueous solution of chloroplatinic acid is 0.04 mol/L. The reducing agent is hydrazine hydrate or sodium borohydride. The amount of the reducing agent is 3-10 times of chloroplatinic acid.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The mass ratio of platinum-ruthenium nanoalloy and graphene in the emulsion of platinum-ruthenium nanoalloy and graphene is 1:10.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The surfactant is sodium toluenesulfonate, sodium dodecyl benzene sulfonate, aliphatic sulfate or quaternary ammonium salt. The cosurfactant is n-octanol, nonanol, n-heptanol or n-hexanol. The oil phase is cyclohexane. The mass ratio of surfactant, cosurfactant and oil phase is 10:7:1. The demulsifier is propanone or anhydrous ethanol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Graphite powder, potassium persulfate and phosphorus pentoxide are added respectively into concentrated sulfuric acid at 80 degrees C, stirred uniformly, cooled for more than 6 hours, washed till obtained product becomes neutral, dried, dried product is added into concentrated sulfuric acid (200-250 mL), potassium persulfate is added, temperature is maintained at 0-20 degrees C for 5-60 minutes, left in oil bath at 35 degrees C for 1-2 hours, deionized water containing hydrogen peroxide solution is slowing added, to obtain a mixture. The mixture is left until mixture becomes bright yellow, pumping filtration is carried out under heating, washed using hydrochloric acid, pumping filtration is carried out, and dried at 60 degrees C for 48 hours under vacuum condition, to obtain graphite oxide. Preferred Composition: The mass ratio of graphite powder, potassium persulfate and phosphorus pentoxide is 2:1:1. The amount of the potassium permanganate is 3 times of graphite powder. The mass concentration of the hydrogen peroxide solution is 30%. The molar concentration of aqueous solution of chloroplatinic acid is 0.04 mol/L. The mass ratio of platinum and graphene in the emulsion of platinum and graphene is 1:10. The reducing agent is hydrazine hydrate or sodium borohydride. The amount of the reducing agent is 3-10 times of chloroplatinic acid.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The surfactant is sodium toluenesulfonate, sodium dodecyl benzene sulfonate, aliphatic sulfate or quaternary ammonium salt. The cosurfactant is n-octanol, nonanol, n-heptanol or n-hexanol. The oil phase is cyclohexane. The mass ratio of surfactant, cosurfactant and oil phase is 10:7:1. The demulsifier is propanone or anhydrous ethanol.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The molar ratio of catalyst to monomer (II) is 1:80-120. The molar ratio of monomer (II), monomer (III) and monomer (IV) is 1-2:2-6:1-2. The catalyst is organopalladium, or a mixture of organopalladium and organophosphine ligand in a molar ratio of 1:3-10.    TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): A bromothiophene-group containing monomer of formula (II), a thio group-containing monomer of formula (III) and a bromo group-containing monomer of formula: Br-D2-Br (IV) are dissolved in a solvent under oxygen-free condition, and carrying out Stille reaction at 90-110 degrees C for 20 minutes to 2 hours in the presence of a catalyst, to obtain polymer (I). Preferred Definitions:    n=6-12;    x,y=2-40;and    x+y=4-80.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: The cover glass (I): further contains 3-15 mole% of magnesium oxide; contains 15.5-30 mole% of sodium oxide, lithium oxide and potassium oxide; and contains more than 12 mole% of sodium oxide. In the cover glass (I) the ratio of lithium oxide to sodium oxide, lithium oxide and potassium oxide is 0-0.2 in mole fraction. The cover glass (II): further contains 0-15 (preferably 0-10) mass% of potassium oxide and the ratio of magnesium oxide to lithium oxide, sodium oxide and potassium oxide is greater than or equal to 0.11; further contains 0-5 mass% of zirconium oxide; contains 0-15 mass% of potassium oxide, and lithium oxide, sodium oxide and potassium oxide is less than or equal to 30 mass%; and contains 57.5 mass% or less of silicon oxide-1/2aluminum oxide. In the cover glass (II) the compressive-stress layer has a compressive stress of greater than or equal to 400 MPa and a surface stress depth of greater than or equal to 20 mu m. EXAMPLE - Glass composition (containing (in mole%) silicon dioxide (65.2), aluminum oxide (7.6), lithium oxide (0.1), sodium oxide (18.4), potassium oxide (2), magnesium oxide (6.6), tin oxide (0.1), (sodium oxide, lithium oxide and potassium oxide) (20.5)) was heated in an electric furnace for 4 hours at 1550 degrees C with a platinum crucible and was made into molten glass, and the molten glass was spread out on an iron plate to obtain a block of glass. The glass block was kept at 600 degrees C for 30 minutes and cooled to obtain a piece of plate-shaped glass. The glass block was subjected to cutting and polishing to obtain glass substrate (0.7 mm). Then, the glass substrate was rinsed, and was then subjected to chemical strengthening (by immersing for 2 hours in 95% of potassium nitrate and 5% of sodium nitrate). The chemically-strengthened glass was rinsed and dried, to obtain a cover glass.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Method: The permeation selectivity of fluosilicic acid (hexa fluorosilicic acid) and monovalent anion in monovalent selectivity anion exchange membrane, is less than 1. The purifier has anode chamber flow path which introduce nitric acid liquid into anode chamber, and a cathode chamber flow path which introduces a nitric acid liquid into cathode chamber. Nitric acid and/or hydrofluoric acid is added to purification liquid taken through purification liquid extraction path, and process liquid is prepared.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The organohydrogen polysiloxane has silicon atom-bonded aryl group(s) in one molecule. The content of alkoxysilyl group-containing compound is 0.1-10 parts mass with respect to 100 parts mass of organopolysiloxane and organohydrogen polysiloxane.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The reaction medium comprises toluene and oleylamine. Preferred Process: Mixing of reducing agent with metal/amine complex is performed in a continuous flow apparatus, in which metal/amine complex and reducing agent are pumped by individual pump and transferred to continuous flow apparatus.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The metal oxide nano-rod is formed from zinc oxide, titanium dioxide, magnesium oxide and zinc magnesium oxide, and the TCO layers are formed from fluorine-doped tin oxide, indium-tin oxide and aluminum zinc oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The condensate is dropped from condensation unit and molten salt in condensate is contacted with molten silicon. The evaporative removal of molten salt is carried out to system outside after removing the impurity from molten silicon. The inert gas is blown in the molten silicon. The impurities are boron. The molten salt contains compound chosen from composite salt-containing alkali metal and halogen, and composite salt-containing alkaline-earth metal and halogen. The molten salt is lithium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride, cesium fluoride, silicofluoride soda, cryolite, mixture of sodium fluoride and barium fluoride, and mixture of sodium fluoride, barium fluoride and barium chloride. The amount of molten salt is 5-300 %mass with respect to molten silicon. The molten salt is further provided to the container. The container consists of graphite or silicon carbide. The recovery unit is cyclone, bag filter or wet collection unit.
Preferred Definitions:    R=styrenated phenyl group of formula (i);    k=1-5;    Y'=1-15C alkylene or functional group of formula: -C(=O)-Z-;and    Z=1-15C alkylene, vinylene, phenylene or carboxyl group-containing phenylene group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The conductive particles have average particle diameter of 0.01-1000 mu m.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The volume ratio of methanol and water in mixed solution is (1-10):1 preferably (1-5):1. The solvent comprises methanol, ethanol, or methyl pyrrolidone preferably dimethylformamide solvent. The mixed solution can be formed from methanol and ethyl orthosilicate at mol ratio (2-10):1 preferably (3-6):1.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The dipping step is performed at 0-50 preferably 25 degrees C for 10-24 preferably 12-16 hours. The reaction step is performed at 0-30 preferably 10-20 degrees C for 3-30 preferably 10-20 minutes. The soaking step is performed at 0-40 preferably 25 degrees C for 30-30 preferably 10-20 minutes. The vacuum drying is performed at 50-80 preferably 70 degrees C, 0.02-0.08 preferably 0.05 MPa for 10-20 preferably 12 hours. Preferred Component: The PTFE membrane having number average molecular weight of 10-30 preferably 20, and thickness of 0.05-0.5 mm preferably 0.1-0.2 mm, porosity of 50-90 preferably 70-80%, pore diameter of 20-500 preferably 100-200 nm. The mass ratio of porous Teflon (RTM: PTFE) film and solution of methanol and water is 1:(100-1000) preferably 1:(500-700). The proton conductive polymer solution in solute is selected from at least one of sulfonated polyethersulfone with number average molecular weight of 50000-100000, sulfonated polyimide with number average molecular weight of 50000-100000, sulfonated polyether-ether-ketone with number average molecular weight of 50000-100000, or modified polybenzimidazole with number average molecular weight of 50000-100000. The proton conducting polymer solution has concentration of 1-10 preferably 2-5%.
TECHNOLOGY FOCUS - METALLURGY - The metals such as aluminum, platinum, molybdenum, copper, nickel, iridium, ruthenium, gold, titanium nitride, tantalum nitride, and tungsten nitride are included.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The thickness of: the absorber layer is 1.5-2 mu ; the bulk region is 0.8-1.2 mu ; and the transition region is 0.4-0.6 mu . In the bulk region: a highest value of Ga/(Ga+In) molar ratio is at least 2x a highest value of Ga/(Ga+In) molar ratio in the transition region; a highest value of S/(Se+S) molar ratio is at least 2x a highest value of S/(Se+S) molar ratio in the transition region; and a lowest value of Ag/(Ag+Cu) molar ratio is at least 20% less than a lowest value of Ag/(Ag+Cu) molar ratio in the transition region. In the transition region a lowest value of Ga/(Ga+In) molar ratio is at least 1.2x a lowest value of Ga/(Ga+In) molar ratio in the surface region. In the surface region: a highest value of S/(Se+S) molar ratio is at least 2x a highest value of S/(Se+S) molar ratio in the transition region; and a lowest value of Ag/(Ag+Cu) molar ratio is at least 20% less than the lowest value of Ag/(Ag+Cu) molar ratio in the transition region. The surface region: Ag/(Ag+Cu) molar ratio decreases at an outward surface of the surface region relative to Ag/(Ag+Cu) molar ratio in an interior portion of the surface region; and S/(S+Se) molar ratio is greater than a surface region Ag/(Ag+Cu) ratio. In the absorber layer: the Ag/(Ag+Cu) molar ratio has a non-linear depth profile; molar ratio of group IB/group IIIA is 0.8-1; molar ratio of Ga/group IIIA is 0.3-0.6 or 0.25-0.5; and molar ratio of Ag/group IB is 0.1-0.3 or 0.05-0.25. The absorber layer further includes at least one dopant material comprising sodium, potassium or lithium. The bulk region includes a Ga/(Ga+In) molar ratio of 0.2-0.6, a S/(Se+S) molar ratio of 0.06-0.3 and a Ag/(Ag+Cu) molar ratio of 0.11-0.07.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The complex oxide is zinc titanate. Preferred Properties: The average particle diameter of zinc oxide powder and complex oxide powder is 1 mu m or less and 1.5 mu m or less, respectively. The BET specific surface area of zinc oxide powder and complex oxide powder is 2-30 m2/g and 2-100 m2/g, respectively.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Complex: The metal complex catalyst is nickel complex. Preferred Definitions:    A=2,5-thienylene of formula (a);and    R1,R2=optionally substituted 1-20C alkyl, 3-20C cycloalkyl or optionally substituted aryl.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Condition: The ionizing method of glass substrate involves ionizing alkali oxides in substrate by radiating ionizing radiation. The ionizing radiation is ultraviolet radiation, X-rays and/or gamma -rays.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The dopant is an organic compound, metal-organic compound or inorganic compound containing 10 atoms or more, preferably 30 atoms or more and more preferably 100 atoms or more, preferably tris-(perfluoro-tert-butoxy)aluminum (III), pentafluorophenylamide of formula (I), (R3Si-X-SiR3)+(BAr4) or ((R2N)2-C=N)n-Ar.M=metal, preferably CO, Ni, Pd or Cu;R=1-10C alkyl, 3-10C aryl or heteroaryl;X=halo or group (a) chosen from fluoro, aryl or heteroaryl;Ar=aryl or heteroaryl, preferably phenyl, naphthyl or anthryl;andn=2-4.
TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): A halogenated naphthalene of formula (II) is coupled to obtain the constrained macrocyclic compound.X=halo. EXAMPLE - (In g) mixture of 2,2'-bipyridine, 1,5-cyclooctadiene (6.15 ml), bis(1,5-cyclooctadiene)nickel (12.7), toluene solution of 2,7-dibromonaphthalene (6.29) were reacted at 80 degrees C. 1M hydrochloric acid (400 ml) was added and the solid obtained was separated. The organic layer produced by adding toluene and salt solution (300 ml) was dried to obtain constrained macrocyclic compound (25 mg) with yield of 0.9%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The nitrogenous aromatic compound is of formula (I).R1 and R2=-H, -CH2OH or -SO3H.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The upper and lower layers has silicon-di-oxide as a main component.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The molar ratio of gold to palladium is less than or equal to 100:1, preferably less than or equal to 25:1. The carrier has a specific surface area of more than 100 m2/g, preferably more than 200 m2/g. The carrier is carbon (preferred), titanium dioxide, zirconium dioxide, iron oxides or silicon carbide, where carbon is carbon black, activated carbon (both preferred), graphite, glassy carbon, highly oriented pyrolytic graphite, single-walled or multi-walled carbon nanotubes, especially carbon black or activated carbon grafted with amino, polyamines or phosphorus containing functional groups. The total amount of gold and palladium in the catalyst is 0.1-75 wt.%, preferably 5-10 wt.%. The amount of gold in the catalyst is 0.05-70 wt.%, preferably 5-10 wt.%. The amount of palladium in the catalyst is 0.01-20 wt.%, preferably 0.5-2 wt.%. The electrochemical cell comprises a cathode, an anode and an electrolyte, where the cathode comprises the catalyst. In the process, the reaction temperature is 0-90 degrees C, preferably less than or equal to 10 degrees C. In the process, the oxygen partial pressure is 1-10 bar, preferably 4-5 bar and the hydrogen partial pressure is 1-10 bar, preferably more than 1-2 bar. The reaction medium further comprises at least one compound comprising water and/or organic solvents, preferably at least water.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Process: The reaction is conducted in an electrochemical cell, especially in a fuel cell, particularly in a hydrogen fuel cell or in a proton exchange membrane fuel cell. EXAMPLE - Oxygen and hydrogen gas were sent to the fuel cell via a humidifier containing water at 50 degrees C, oxygen partial pressure of 4.72, and hydrogen partial pressure of 1.16 at 2 degrees C, to obtain hydrogen peroxide (2.6 wt.%).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The fluorosilane is trichloro-(1-pentafluorophenyl-prop yl)-silane. Preferred Property: The water-repellant surface transaction layer has thickness of 0.1-100 mm.
TECHNOLOGY FOCUS - POLYMERS - The support is made from a group consisting of organic glass, polycarbonate, PVC, polyethylene terephthalate (PET), and polypropylene (PP).
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preferred Method: The concentration of sulfur, selenium, and tellurium is elevated relative to a concentration in the standard culture medium, where the concentration is 2-100X times or more than 100X times. The method involves growing and/or maintaining and culturing photosynthetic cells, non-photosynthetic cells of photosynthetic organism under conditions that allow cells to perform photosynthesis. The method further involves recovering nanoparticles from cells, where nanoparticles include quantum dots, and deriving metal ions from copper, zinc, cadmium, indium and gallium. The method involves acidifying culture medium for inducing cellular flocculation and centrifuging the cellular flocculent for concentrating nanoparticles, manipulating one or more variables chosen from concentration of one or more metals, ratio of two or more metals, concentration of sulfur, selenium, and/or tellurium, duration of exposure of the cells to the one or more metals, temperature and/or pressure of the bioreactor, one or more constituents of the culture medium and light intensity during the biosynthesis, where manipulation of one more variables determines size of nanoparticle. The method further involves repeating the steps several times with different metal with selected number of layers. Preferred Cell: The photosynthetic cells are either prokaryotic or eukaryotic cells or combination of prokaryotic and eukaryotic cells. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The nano-structure is made of metal oxide such as antimony tin oxide, titanium oxide, zinc oxidate, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, cadmium selenium, cadmium tellurium, zinc selenium or zinc tellurium. A lower portion charge transport sacrificial layer is made of zinc oxide or poly(3,4-ethylenedioxythiophene).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The substrate is silicon substrate or glass substrates.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The amino-silane is 3-aminopropyl try ethoxy silane.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The step of forming the amino-silane pattern involves used of micro contact printing, nano imprinting or ink-jet printing. The step of forming amino-silane pattern involves introducing hydroxyl group on the surface of the polymer layer, where a patterned polydimethylsiloxane (PDMS) stamp containing amino-silane is coated on the polymer layer. The gold nano particle aqueous solution is surrounded by the citrate. Preferred Components: The polymer layer comprises polyimide. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The method (M1) involves coating the deposition step in the flat panel display, where the coating comprises depositing the coating film having a thickness of 20-30 micron by the spray type and comma coating mode. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The mixed gas is chosen from air, oxygen, hydrogen and/or argon. Preferred Properties: The purity of each of the oxygen, the hydrogen and the argon is greater than 99.9999%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred method: The method further involves applying bias electric power at the stage which supports amorphous titanium oxide. Large amount of bias electric power is applied to reduced-pressure atmosphere (B) than reduced-pressure atmosphere (A). Preferred Composition: The mask is the metal film pattern formed on amorphous titanium dioxide. Etching under reduced-pressure atmosphere (B) is performed using oxygen as etching gas. The etching gas contains a mixture of tetrafluoromethane and perfluoropropane gas.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The membrane is doped with the elements selected from gallium, aluminum and boron.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Composition: The III-V group compounds (1.34eV-2.45eV) are of formula: AxB(1-x)C (I).A=gallium or aluminum;B=indium;andC=phosphorus.The buffer layer has thickness of 30 nm-100 nm. The III-V group compounds are of formula: GaxIn(1-X)P (II). The III-V group compounds are of formula: CuInyGa(1-y)SZSe(1-z) (III). EXAMPLE - None given.
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preparation: No preparation method is given. Preferred Protein: The fusion protein comprises an amino acid sequence exhibiting 90% or more amino-acid-sequence identity with respect to the amino acid sequence of SEQ ID NO: 2, 27 or 32. Sequences not defined here may be found at ftp://ftp.wipo.int/pub/published_pct_sequences/publication. Preferred Peptide: The first and second peptide portion can couple with a different target substance respectively. The C-terminal portion of the first peptide portion unites with the N terminal portion of the polypeptide portion. The N terminal portion of the second peptide portion has united with the C-terminal portion of the polypeptide portion. Preferred Polypeptide: The polypeptide portion which can form the multimer having a lumen is Dps. The Dps comprises amino acid sequence exhibiting 90% or more of amino-acid-sequence identity with respect to the amino acid sequence of SEQ ID NOs: 4-29. Sequences not defined here may be found at ftp://ftp.wipo.int/pub/published_pct_sequences/publication. Preferred Target: The first target substance and second target substance are a metal material, a silicon material, or carbon raw material. Preferred Component: The multimer comprises a substance in a lumen. The multimer is a composite complex comprising first and second target substance capable of coupling with first and second peptide respectively in the fusion protein. Preferred Transformant: The transformant is Escherichia coli.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal material is a titanium raw material or a zinc raw material. The silicon material is an oxide of a silicon or silicon. The carbon raw material is a carbon nano raw material. ACTIVITY - Antibacterial. No biological data given.    MECHANISM OF ACTION - None given.    EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The glass frit contains silicon dioxide, phosphorus pentoxide, alkali metal oxide and alkaline earth metal oxide. The alkali metal oxide is potassium oxide, sodium oxide and/or lithium oxide. The alkaline earth metal oxide is magnesium oxide, calcium oxide, strontium oxide and/or barium oxide.
TECHNOLOGY FOCUS - METALLURGY - The semiconductor material is made of group IV materials, compounds and alloys comprising materials from groups II and VI, or compounds and alloys comprising materials from groups III and V or their combinations. The semiconductor material further includes a material selected from silicon, gallium arsenide, germanium, copper indium gallium selenide (CIGS), cadmium telluride, and alloys or their combinations. The silicon material is selected from monocrystalline, multicrystalline, microcrystalline, polycrystalline, or their combinations.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - A silicon oxide film is formed in a thermal growing mode. The back sides of the semiconductor substrate and adhesion layer are coated with aluminum. The substrate is doped with phosphorus.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The thin film made of titanium nitride, is formed by doping titanium compound layer on the substrate. The weight of titanium within the thin film is greater than the weight of nitrogen.
TECHNOLOGY FOCUS - POLYMERS - Preparation (Claimed): The silsesquiazane polymer is manufactured by subjecting silane compound of formula (IV) to ammonolysis reaction under ammonia gas atmosphere. Preferred Composition: The silsesquiazane polymer further includes imine group-containing structural unit of formula: -Si(-Ar')-(NH)1.5 (II). The content of imine group-containing structural unit (I) is 10-100 mol% with respect to total number-of-moles of structural units in silsesquiazane polymer. The silsesquiazane polymer is of formula (III). The sulfur content of siliceous film is 2-15%.Ar'=aromatic group optionally substituted by 1-6C hydrocarbyl, or 2-12C unsaturated hydrocarbyl;n=0.1-1;andm=0-0.9.Preferred Properties: The silsesquiazane polymer has weight average molecular weight of 500-10000. The siliceous film has refractive index with respect to light of 633 nm is 1.6 or more. EXAMPLE - 1-Sulfonatophenyl trichloride (1 mol) and phenyltrichlorosilane (1 mol) were mixed. Xylene (3 L) was added to mixture. The reaction mixture was reacted and subjected to ammonolysis reaction. Ammonia gas was supplied to reaction mixture and reacted, to obtain polymer having number average molecular weight of 2500 and weight average molecular weight of 4000.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of zinc oxide, aluminum oxide, magnesium oxide and silica in the conducting film is 70-94 wt.%, 0.5-3 wt.%, 5-25 wt.% and 0.5-3 wt.%, respectively. Preferred Atmosphere: The inert atmosphere is helium, argon, neon or nitrogen atmosphere. Preferred Properties: The conducting film has transmittance of 80-90% at 500-700 nm, and unit resistance of 5x 10-3-7.6x 10-4 Omega .cm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The quantum layer contains indium-antimony-arsenic alloy (InSbxAs1-x, where x is 0-1). The barrier layer contains aluminum-antimony-arsenic alloy (AlSbyAs1-y, where y is 0-1).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The wafer material comprises multi-crystalline silicon or single crystal silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Processes: Light doped semiconductor substrate is doped with boron. The fabrication method involves removing phosphosilicate glass layer formed on emitter layer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The organo-aluminate compound(s) is less than or equal to 2, preferably greater than or equal to 1 wt.%. It is diisopropyl(oleyl)acetoacetyl or its derivative. The glass frit(s) is present at 0.5-3, preferably less than or equal to 2 wt.%. EXAMPLE - An aluminum-based paste was prepared from (wt.%) Glass frit no.1 (2), silica (0.50), wetted aluminum powder (80), organo aluminate (1), ethyl cellulose varnish (11.50), surfactant (0.20), and solvent (4.80). It had a viscosity of 34.19 Pa-seconds, could provide crystalline silicon solar cells with open circuit voltage of 614 mV, and had efficiency of 16.47%, Pencil hardness of 611, Cross hatch adhesion of 1, no appearance defects (i.e. 0%), and Bowing of 0.87 mm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The complex hydride is sodium borohydride. The solution which acts as fuel with which the complex hydride is stabilized is 4.5 wt.% sodium hydroxide. The cobalt boride catalyst is supported on nickel foam.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The electroluminescent dopant is amino substituted chrysenes and amino-substituted anthracenes. Preferred Definitions:    Ar1 = phenyl, naphthyl, phenanthryl, anthracenyl, phenylnaphthylene, naphthylphenylene or deuterated analogs;    R1-R3 and R6-R8 = H or D;    R4, R5, R9 and R10 = methyl;    R11, R13 = H or D; and    R12 = phenyl, naphthyl, phenanthryl, anthracenyl or deuterated analogs.    SPECIFIC COMPOUNDS - 8 Compounds (I) are specifically diclosed e.g. 9,10-bis-(2,6-dimethyl-4-naphthalen-1-yl-phenyl)-anthracene of formula (Ia), 9-(2,6-dimethyl-4-naphthalen-1-yl-phenyl)-10-(2,6-dimethyl-4-naphthalen-2-yl-phenyl)-anthracene, 9-(2,6-dimethyl-4-naphthalen-2-yl-phenyl)-10-(2,6-dimethyl-phenyl)-anthracene, 2-tert-butyl-9,10-bis-(2,6-dimethyl-3-naphthalen-1-yl-phenyl)-anthracene, and 9-(2,6-dimethyl-4-naphthalen-2-yl-phenyl)-10-(2,6-dimethyl-4-naphthalen-1-yl-phenyl)-anthracene.    EXAMPLE - Trifluoro-methanesulfonic acid 4-(10-(2,6-dimethyl-4-naphthalen-1-yl-phenyl)-anthracen-9-yl)-3,5-dimethyl-phenyl ester (1.07 g) and 2-naphthaleneboronic acid (0.56 g) was added into a rubidium fluoride (100 ml), followed by the addition of tetrahydrofuran (30 ml). The mixture was purged with pure nitrogen (N2) for 10 minutes. Then potassium carbonate (0.89 g) was dissolved in the water (5 ml). The mixture was continued to purge with N2 for 10 minutes, and then added a catalyst (1,1'-bis(diphenylphosphino)ferrocene)dichloropalladium(II) (0.1 g). The mixture was refluxed overnight. After split of aqueous phase, organic layer was filtered through silica pad to remove black palladium and concentrated to give the crude product as a black oil. The crude product was purified by silica gel column chromatography to give 9-(2,6-dimethyl-4-naphthalen-2-yl-phenyl)-10-(2,6-dimethyl-4-naphthalen-1-yl-phenyl)-anthracene (yield-77%).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The conducting carbon structures are carbon nanotube and graphene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The passivation layer is made of aluminum zinc oxide thin film and indium tin oxide thin film. The N-type semiconductor layer is made of doped amorphous silicon thin film with phosphine acceptor impurity. The back contact electrode is made of aluminum paste and silver paste. The oxidation silicon, silicon nitride and silicon carbide are evaporated on P-type or N-type crystalline silicon substrate. Sulfuric acid is mixed with hydrogen peroxide to remove photoresist from crystalline silicon substrate. The crystalline silicon substrate is dipped in sodium hydroxide solution. The front electrode is made of fluorine doped tin oxide. The P-type semiconductor layer is formed by injecting silane, hydrogen gas, diborane and phosphine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The front side transparent conductivity oxide layer is made of zinc oxide with aluminum and indium tin oxide.    TECHNOLOGY FOCUS - METALLURGY - The p-type semiconductor layer is formed with hydrogenated doped amorphous silicon thin film with p-type boron acceptor impurity or hydrogenated silicon oxide film to inject nitric oxide gas. The n-type semiconductor layer is formed of doped amorphous silicon thin film with phosphine acceptor impurity. The back surface electrode layer is made of aluminum or silver. The glass substrate is distilled in hydrofluoric acid.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The catalyst is Lewis acid catalyst. Preferred Process: Diels-Alder reaction of acene compound of formula (V) and vinylene carbonate is carried out to obtain 1,2-diol. Oxidative cleavage of the diol is carried out to obtain acene dicarboxylic acid compound.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of pure selenium phase in sputtering target is 90 %mass or less.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The alloy powder contains (in %mass) selenium (30-90), and remainder of copper-selenium alloy powder, or alloy powder contains gallium (70 or less) and remainder of copper-gallium alloy powder, or alloy powder contains indium (30-70) and remainder of copper-indium alloy powder, or alloy powder contains indium (70 or less), gallium (50 or less), and remainder of copper-indium-gallium alloy powder.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The thermoset ionomer includes crosslinking imidazolium of formula (I), crosslinking pyrazolium of formula (II), crosslinking 1,2,3-triazolium of formula (III), and/or crosslinking 1,2,4-triazolium of formula (IV). The imidazolium is chosen from imidazolium, 2-methylimidazolium and benzimidazolium. The pyrazolium is pyrazolium and/or benzopyrazolium. The N-alkylated moieties are of formula: (Q-A)n-Y'(X-)n. The azolium is bis-alkylated 1,1'(1,4-butanediyl)bis(imidazole) of formula (V). The thermoset polymer is of formula (VI). The alkylated moieties are of formula: (Q-P1)n-Y'(X")n'. The cationic moiety is bis-alkylated-1,2-bis(diphenylphosphino)ethane of formula (VII). The crosslinking nucleophile is chosen from imidazole, 2-methylimidazole, benzimidazole, pyrazole, benzopyrazole, 1,2-bis(diphenylphosphino)ethane and 1,6-bis(diphenylphosphino)hexane. The halogenated polymer comprises chlorinated butyl rubber, brominated isobutylene-co-p-methylstyrene, chlorinated polyethylene or halogenated ethylene-propylene-diene monomer. The thermoset ionomer further contains filler, additive and solvent. The filler is chosen from carbon black, silica, clay, glass fiber and polymeric fiber. The additive is chosen from antioxidant, wax, reinforcing filler, non-reinforcing filler, ultraviolet-radiation stabilizer, anti-ozone-stabilizing compound, tackifier, oil and soap. The antioxidant is phenolic or amine-type antioxidant. The solvent is chosen from hexane, toluene, tetrahydrofuran, dichloromethane and chloroform.Q=polymer;R1-R3=H, silyl, optionally substituted 1-16C aliphatic group, 1-16C aryl;or two or more of R1-R3=azole ring;X"=anion;A=imidazolium, pyrazolium, oxazolium, thiazoliuim or triazolium;X"=anion;n=2-300;Y'=linker;P1=quaternary phosphonium cation;andn'=2-10.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The high-refractive index glass has liquid phase viscosity of 103 dPa.second or more, and is tabular. The high-refractive index glass has refractive index of 1.55-2.3, and density of 4 g/cm3 or less. The surface roughness of the non-polished surface of the high-refractive index glass is 10 Angstrom or less. Preferred Composition: The total content of silica, alumina, and boron trioxide is 60-70 mol%. The content of silica and boron trioxide is 60-70 mol% and 0-1 mol%, respectively. The total content of magnesium oxide, calcium oxide, strontium oxide and barium oxide in the glass composition is 25-30 mol%. The total content of barium oxide, lanthanum oxide, niobium oxide, zirconium oxide and titanium oxide in the glass composition is 15-25 mol%. The molar ratio of boron trioxide with respect to silica is 0-0.1. The molar ratio of silica with respect to total content of magnesium oxide, calcium oxide, strontium oxide, barium oxide, lanthanum oxide and niobium pentoxide is 1.5-2.5. The molar ratio of total content of magnesium oxide, calcium oxide, strontium oxide and barium oxide with respect to total content of magnesium oxide, calcium oxide, strontium oxide, barium oxide, lanthanum oxide, niobium pentoxide, and gadolinium oxide is 0.8-0.99.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The chemically strengthened glass has surface pressure shrinkage stress of 550 MPa or more and thickness of 1.2 mm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The carbon content is less than 0.1 %mass. The content of the chalcogen compound powder in the paste is 20-80 %mass. The metal source is metal hydroxide powder. The metal source is mixture of metal oxide powder or metal hydroxide and an oxide. The metal source contains gallium. The reducing gas is hydrogen or mixture of hydrogen gas and an inert gas. Preferred Process: The heating is performed at 220 degrees C or more in the reducing gas. The reducing gas contains selenium hydride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The dispersion medium is alcohol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The non-electroconductive layer of the apparatus is made of material containing oxygen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first reducible metal ion comprises at least one of at least one coinage metal ion, at least one ion of an element from IUPAC group 11 or at least one silver ion. The second metal or metal ion comprises cobalt, an ion of cobalt, rhodium or an ion of rhodium. The metal nanowire comprises: an aspect ratio of 50-10000; and an average diameter of 10-300 nm. EXAMPLE - Ethylene glycol (280 ml) and cobalt chloride hydrate (1.1 g) in ethylene glycol were added to a reaction flask (500 ml). Nitrogen was bubbled into the solution for at least 2 hours at room temperature with mechanical stirring. Stock solutions of silver nitrate (0.25 M) in ethylene glycol and polyvinylpyrrolidinone (PVP) (0.77 M) in ethylene glycol were degassed by bubbling nitrogen into the solutions for 60 minutes. Two syringes were loaded with silver nitrate (20 ml) and PVP (20 ml) solutions. The reaction mixture was heated to 145 degrees C under nitrogen and the silver nitrate and PVP solutions were added at a constant rate for 25 minutes. The reaction mixture was held at 145 degrees C for 90 minutes and allowed to cool to room temperature. The cooled reaction mixture was diluted by an equal volume of acetone and centrifuged. The decanted solid was re-dispersed in isopropanol (200 ml), shaken for 10 minutes and centrifuged again, decanted and diluted with (15 ml) isopropanol to form the silver nanowire.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The first reducible metal ion comprises coinage metal ion(s), ion(s) of an element from IUPAC group 11, and/or or silver ion(s). The composition comprises metal oxide compound(s) comprising second metal(s) or metal ion. The metal oxide compound comprises metal oxide halide compound and/or transition metal oxide compound. The second metal or metal ion has an oxidation state of +4 or greater. It comprises element(s) or ion of an element from IUPAC groups 3-7.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The metal nanowire has aspect ratio of 50-10000, average diameter of 10-300, preferably 25-60 nm.
TECHNOLOGY FOCUS - METALLURGY - The non-redox active metal is provided with an element from group 2, group 11 and group 13, and that is made up of aluminum, indium and strontium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The semiconductor material includes single crystal silicon. The up-conversion components include an up-conversion material and sensitizer material comprising rare earth. The up-conversion material includes erbium, and the sensitizer material includes dysprosium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compositions: Abundance ratio of anatase-type titanium oxide increases from the surface of the conductor to the surface of the chromophore layer. Abundance ratio of rutile-type titanium dioxide increases from the surface of the chromophore layer to the surface of the conductor. The titanium oxide layer is formed of a rutile-type titanium dioxide layer positioned on the conductor and an anatase-type titanium oxide layer positioned on the rutile-type titanium dioxide layer. Preferred Parameters: Based on the vacuum level, the chromophore's lowest unoccupied molecular orbital (LUMO) level is larger than the conduction band level of the region near the chromophore layer. Based on the vacuum level, the chromophore's Fermi level is smaller than the Fermi level of the region near the chromophore layer. Fermi level of the rutile-type titanium dioxide layer is larger than the Fermi level of the anatase-type titanium oxide layer. Fermi level of the conductor is larger than the Fermi level of the rutile-type titanium dioxide layer. The chromophore's LUMO level is larger than the conduction band level of the anatase-type titanium oxide layer. The chromophore's Fermi level is smaller than the Fermi level of the anatase-type titanium oxide layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The engineered substrate includes, as a second phase, an additive material that is chemically non-reactive with aluminum nitride and has a CTE that is greater than that of pure aluminum nitride at same temperature. The second phase comprises about 5% or greater by weight of the substrate. The second phase comprises titanium nitride. The multiphase aluminum nitride material has a CTE that is within 25% of the CTE of a Group III-Nitride material other than pure aluminum nitride at the same temperature. The Group III-Nitride material comprises gallium nitride. The semiconductor growth layer comprises gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), InN, InAlGaN, AlInN, aluminum gallium arsenide (AlGaAs), gallium phosphide (GaP), GaAs, GaAsP, or AlGaInP. The semiconductor growth layer comprises a single crystal material.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The metal complex is of formula (II).Ln=rare earth metal atom, preferably europium, terbium, erbium, ytterbium, neodymium or samarium;NL=neutral ligand;m=valence of Ln;andn=1-5. Preferred Definitions:    R1=electron withdrawing group, preferably halo or perfluoroalkyl.    EXAMPLE - (In g) sodium hydride (0.96), spin-dried tetrahydrofuran (22.5 ml), spin-dried tetrahydrofuran solution (12.5 ml) of 2-acetyl thiophene (2.52) and 4-fluoromethyl benzoate (3.70) were stirred and refluxed under nitrogen stream for 8 hours. The reaction mixture was returned to room temperature and pure water (10.0) was added. Hydrochloric acid (5.0 ml) was added and the organic layer was separated and concentrated under reduced pressure. The concentrate was recrystallized and (1-(4-fluorophenyl)-3-(2-thienyl)-1,3-propanedione (FTP) (83) was obtained with yield of 57%. FTP (556.1 mg) and 1,10-phenanthroline (151.4 mg) were dispersed in methanol (25.0). A solution of methanol (10.0) containing sodium hydroxide (112.0 mg) was added to the dispersion liquid, and stirred for 1 hour. A solution containing europium chloride (III) hexahydrate (256.5 mg) dissolved in methanol (5.0) was added and stirred at room temperature for 2 hours. The produced deposit was suction-filtered and washed with methanol to obtain europium-containing metal complex (730.0 mg).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The ratio of I-B group element content with respect to III-B group element content in surface portion and remaining portion is 0.8-1.1, respectively. The average value of ratio of VI-B group element content and I-B group element content in surface portion is 2-2.3. The average value of ratio of VI-B group element content and I-B group element content in remaining portion is 1.6-1.9. I-B group element is copper. VI-B group element is selenium. The photoelectric conversion apparatus further has crystal grains. Preferred Property: Average particle diameter of the crystal grains in the remaining portion is less than average particle diameter of the crystal grains in surface portion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The insulating oxide in shell portion of photoelectric conversion element contains magnesium oxide, zirconium oxide, aluminum oxide and silicon oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Microparticles are chosen from zirconium oxide, aluminum oxide, silicon oxide and magnesium oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The reflection layer contains aluminum-indium-gallium nitride semiconductor. The primary and secondary dielectric particles are chosen from silicon oxide, silicon oxynitride, silicon carbonitride, silicon fluoride and hafnium oxide. A coating layer containing non-doped gallium nitride is provided between primary particle layer and nitride semiconductor layer. The conductive layer is formed by laminating layers containing zinc, indium, tin and magnesium. The substrate contains aluminum-indium-gallium nitride, gallium phosphide, gallium-arsenic, neodymium-gallium oxide, lithium-gallium oxide, aluminum oxide, magnesium-aluminum oxide, zinc oxide, silicon, silicon carbide, silicon-germanium or zirconium boride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The molten raw material is supplied to crucible (1) for crystal growth. The molten raw material is stirred.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The wet chemical etchant is selected from hydrofluoric acid, hydrochloric acid or base. The electrical contact layer is made of zinc oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layer: The bonding layers (120,140) are made of complex of aluminum, gallium, indium phosphide, arsenic and antimony ((Al)(Ga)InP(As)(Sb)). The bonding layers (120,140) have a dopant concentration of 5x 1018/cm3 or more. The wafers (110,130) comprise one or more layers consisting of silicon, germanium, gallium arsenide, indium phosphide, gallium phosphide, gallium antimonate, and gallium indium nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The interposer sheet is made of silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and boron nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The group III element is gallium. The mole concentration of gallium in the semiconductor layer (3) is more towards the portion opposite to semiconductor layer (4). The group I element is copper. The content of copper in the semiconductor layer (3) is less than the content of copper in the vicinity of semiconductor layer (4). The group VI element is selenium. The content of selenium in semiconductor layer (3) is more than the content of selenium in the vicinity of semiconductor layer (4).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The reaction chamber is filled with a catalyst.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of bismuth oxide and boron trioxide in the lead free frit powder is 75-95 weight% and 1-15 weight%, respectively. The content of zinc oxide, alumina and/or barium carbonate in the lead free frit powder is 1-20 weight%. Preferred Property: The average particle diameter of glass frit powder is 1-10 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The average particle diameter of the copper powder is 1-300 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The reduction occurs in the presence of at least one halide ion, at least one protecting agent and at least one polyol. Preferred Components: The first reducible metal ion comprises at least one coinage metal ion, at least one ion of an IUPAC Group 11 element, and at least one silver ion. The composition (c1) comprises silver nitrate. The second metal ion comprises tin and germanium in their +2 oxidation states. The product comprises at least one metal nanowire. In the composition (c2), the metal nanowire comprises at least one silver nanowire having a smallest dimension of 10-300 nm and an aspect ratio of 50-10000. EXAMPLE - To a 500 ml reaction flask containing ethylene glycol (EG) (280 ml), 9.3 mM SnCl2 (1.1 ml) in EG was added and degassed for 2 hours by bubbling nitrogen into the solution using a glass pipette with mechanical stirring at 100 revolutions per minute (rpm). Stock solutions of 0.77 M polyvinylpyrrolidone (PVP) in EG and 0.25 M AgNO3 in EG were also degassed with nitrogen for 60 minutes. 20 ml Syringes of the PVP and AgNO3 solutions were then prepared. The reaction mixture was heated to 145 degrees C under N2, and after the reaction mixture was held 10 minutes at the set point temperature, the AgNO3 and PVP solutions were added at a constant rate over 25 minutes via a 12 gauge TEFLON (RTM: fluoropolymer syringe needle). The reaction mixture was held at 145 degrees C for 90 minutes, at which time sample was taken for analysis by optical microscopy and then allowed to cool to ambient temperature. The cooled reaction mixture (15 ml) was diluted with isopropanol (35 ml), centrifuged for 15 minutes at 1500 rpm, decanted, and then re-dispersed in isopropanol (IPA) (5 ml). The resulting mixture was sampled for scanning electron microscopy. The average nanowire diameter was 97 plus minus 24 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The converter includes an insulating layer made of zinc sulfide or particulate silicon dioxide. The electron transport layer is made of dyed titanium dioxide.    TECHNOLOGY FOCUS - METALLURGY - The electron transport material includes a particulate oxide semiconductor that is selected from one of titanium, zinc and tin. The porous electroconductive layer is made of an electroconductive material selected from one of indium, aluminum and tin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The instant absorption electric power generation substance of hydrogen and oxygen of liquid magnesium is loaded in the piezoelectric element magnet of fuel cell power generation machine. The pinhole cavity of piezoelectric element is enclosed with carbon substance.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The aluminum iron alloy is used in the interior of straight pipe of fuel cell power generation machine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Anti-reflective film made of titanium oxide is provided on light receiving surface.
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The steel plate further contains copper (0.3 or less) and/or molybdenum (1 or less), and vanadium (0.5 or less) and/or niobium (0.5 or less).
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The steel plate further comprises copper (0.3-1) and/or molybdenum (1 or less, excluding 0), and vanadium (0.5 or less, excluding 0).
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The ferrite type steel plate further contains (in %mass) copper (0.3-1.0) and/or molybdenum (1.0 or less, excluding 0), and vanadium (0.5 or less, excluding 0).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The coupling between fullerene of fullerene dimer is cleaved by acting oxidizing agent on fullerene dimer, during manufacture of fullerene compound. Preferred components: A basic compound is used during manufacture of fullerene compound. The oxidizing agent is bivalent copper salt. The fullerene dimer is of formula (X).R24-R26=R21.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The 1st silicon layer is microcrystalline silicon layer, and the 2nd silicon layer is amorphous silicon layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The heat reflective film consists essentially one of gold, aluminum, silver or copper.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The first reaction unit includes a reformer which is supplied with a vaporized liquid fuel of a hydrocarbon type as the first reaction material and which generates gas including hydrogen as a product material from the first reaction material, and the second reaction unit includes a carbon monoxide remover which is supplied with the product material as the second reaction material and which removes carbon monoxide included in the product material. The first and second reaction units are separately arranged, and the reaction device main body is further provided with a connection portion that connects the first and second reaction units. In the reaction device, a heat-insulating room is provided in between the first reaction unit and the second reaction unit. The second reaction unit is heated by the first heater through the connection portion. In the reaction device, the container is made of glass, where an internal space of the container is at vacuum pressure. The reaction device further comprises a supporting portion to support the reaction device main body by connecting the reaction device main body and the container. The supporting portion is provided with many flow passages to supply reaction material that is used for reaction at the reaction device main body, from outside of the container to the reaction device main body, and to discharge product material that is generated by the reaction at the reaction device main body, to outside of the container. The supporting portion is provided at one end portion at the second reaction unit side of the reaction device main body. The heat reflective film is covered with a heat absorbing film (32b) at the second portion to form the heat releasing portion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The compound (b) is of formula: CuInwGa(1-w)(SezS(1-z))2. The compound (a) is of formula: CuInxGa(1-x)(SeyS(1-y))2.x=0-0.2;y=0.8-1;w=0.8-1;andz=0-0.2.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The titanium salt is chosen from titanium sulfate, tetrabutyl titanate, isopropyl titanate, titanium tetrachloride and ammonium titanium lactate. The alkali solution is chosen from ammonia water solution, sodium hydroxide solution, potassium hydroxide solution, barium hydroxide solution or calcium hydroxide solution. The oxide is chosen from hydrogen peroxide, sodium peroxide, potassium peroxide, barium peroxide or calcium peroxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal chalcogenide is chosen from tin disulfide, tin diselenide, indium selenide, zinc telluride, indium telluride, copper (I) sulfide, germanium sulfide, mercury selenide, gallium (III) selenide, antimony selenide, antimony telluride, molybdenum disulfide, copper indium sulfur selenide of (CuInSxSe2-x) and copper indium gallium selenide of (CuInyGa1-ySe2), where x is in the range of greater than 0 and less than or equal to 2 and y is in the range of greater than 0 and less than or equal to 1. The oxide semiconductor thin film electrode is chosen from metal oxide of titanium, niobium, zinc, tin, zirconium, yttrium, lanthanum, tantalum, tungsten, hafnium, strontium, indium, vanadium, chromium, molybdenum, strontium titanate or calcium titanate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The oxide semiconductor comprises nickel ferrite, cobalt-iron oxide, or strontium-copper oxide. The oxide semiconductor is calcium and potassium-doped strontium copper oxide. The secondary electrode of solar cell comprises aluminum. The light absorption layer comprises silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The base material of n-type transparent conductive oxide film is zinc oxide, zinc-doped indium oxide, tin-doped indium oxide and indium gallium zinc oxide. The base material of p-type transparent conductive oxide film is nickel oxide, cuprous oxide, zinc magnesium oxide. The aluminum nitride, titanium nitride and gallium nitride are mixed for forming p-type transparent conductive oxide film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: A layer (r2) is deposited using an acidic electrolysis bath, and layer (r1) and/or layer (r2) comprise copper and indium, and atomic ratio of copper and indium is 1-2. The layer (r1) and/or (r2) is intermixed by heating process and annealed in atmosphere comprising at least one element VI. A layer (r3) is deposited on layer (r2), and layer (r1), layer (r2) and layer (r3) comprises copper, indium and gallium. Preferred Composition: The adaptation layer comprises molybdenum. The layer (r1) comprises copper. Preferred Properties: The layer (r1) has thickness of more than 40 nm. The adaptation layer has thickness of 600 nm or less.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: In the method: forming the flexible and conformal material comprises coating the surface region with the polymer material of 1-10 mu . The method further comprises affixing stripes on substrate structure pre-applied with a layer of flexible and conformal material. Preferred Components: In the method: the transparent substrate member comprises a substrate material comprising glass, quartz, metal, semiconductor or plastic and is optically transparent to the electromagnetic radiation; the polymer material is configured to absorb thermal energy from the electromagnetic radiation; the flexible and conformal material acts as a carrier material to hold the solar cells; the solar cells are configured as many stripes arranged on and to be released from one portion of the transparent substrate member; the films of materials comprises a first electrode layer, an absorber layer overlying the electrode layer, a window layer overlying the absorber layer and a second electrode layer overlying the window layer with the thickness of less than 20 mu ; the thickness of the absorber material is grain size of it; the solar cells has a thin film absorber material; and the interface region comprises many VanderWall's forces to bond the flexible and conformal material with the surface region which are overcomed during the detachment of the flexible and conformal material from the surface region. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The quantum well is made of silicon germanium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The reactive silicon group of organic polymer is methyl dimethoxysilyl group.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The reactive silicon group is contained in the terminal of the organic polymer. The principal chain of organic polymer (A) and organic polymer (B) is polyoxyalkylene-type polymer, polyacryl-type polymer and/or hydrocarbon-type polymer, preferably polyoxyalkylene-type polymer. The organic polymer further contains initiator having one hydroxyl group in a molecule and initiator having two or more hydroxyl groups in a molecule. The amount of organic polymer (B) is 20-2000 parts weight with respect to 100 parts weight of organic polymer (A). The curable composition further contains 1-20 parts weight of phthalate ester plasticizer with respect to 100 parts weight of organic polymer (A). Preferred Process: The organic polymer is obtained by introducing reactive silicon group into polyoxypropylene-type polymer in presence of initiator and metal cyanide complex catalyst. Preferred Definitions:    R1=methyl;and    Y'=oxygen.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The resin (B) is dispersed phase. The amount of polyolefin as component (C) contained in at least one layer of (P) is 5-30 %mass with respect to total amount of layer (P1). The amount (MB) of component (B) with respect to the amount (MC) of component (C) satisfies the relation: MC less than or equal to -0.14MB+30.5. At least two layers of (P) contain particles.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The refining material contains potassium cyanide, sodium cyanide, nitric acid, and/or ammonium hydroxide. The catalyst contains silver chloride, potassium bromide, potassium iodide, cupric chloride, platinum(II) chloride, chloroplatinous acid, chloroplatinic acid, gold(I) chloride, gold(III) chloride, chloroauric acid (HAuCl4) and/or hydrogen auricchloride (HAuCl2). The content of refinement material is 1.5-3 weight equivalents with respect to number of moles of the catalyst. The metal nanowire contains silver. After heating the solvent, a capping agent is added (ST20) to the solvent, and after adding metal compound to the solvent, a room temperature solvent is added (ST50) to the reaction solution. The content of capping agent is 50-300 parts weight with respect to 100 parts weight of the metal compound. The catalyst contains (in wt.%) sodium chloride (80-90), water (3-12), magnesium (0.2-1.2), potassium (0.05-0.5) and additional elements (1-8) including zinc, iron, selenium, manganese, phosphorus, bromine and/or iodine. The catalyst contains bay salt and/or refined salt. The content of catalyst is 0.005-0.5 part weight with respect to 100 parts weight of the metal compound. Preferred Property: The metal nanowire has length of 20 mu m or more.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The solvent contains propylene glycol, 1,3-propanediol, and/or dipropylene glycol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The intrinsic semiconductor layer is made of amorphous silicon or microcrystalline silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composite material composition contains carbon nanotube (in parts weight) (0.5-20) and carbon fiber or carbon black (10-30) with respect to base polymer (100). The composition further contains plasticizer, stress-relief agent, release agent, flame retardant and/or antistatic agent. The carbon nanotube is single-wall carbon nanotube or multi-walled carbon nanotube. The carbon black is chopped carbon black or milled carbon black.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The plasticizer is dioctyl phthalate, dibutyl phthalate and/or dioctyl adipate. The flame retardant is tetrabromobisphenol A, brominated polystyrene and/or brominated epoxy oligomer. The antistatic agent is polyethylene glycol ester, sorbitan monostearate and/or sorbitan monolaurate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The base polymer is polypropylene, polycarbonate, polystyrene, polyvinyl chloride, polyether ether ketone, polyethylene, modified polyphenylene oxide, acrylonitrile-butadiene-styrene, polymethyl methacrylate, thermoplastic elastomer, polyvinyl acetate, polyester, polyphenylene sulfide, polyether sulfone, polybutylene terephthalate or polyamide. The stress-relief agent is ethylene-propylene diene rubber, styrene-ethylene-butadiene-styrene and/or methyl methacrylate-butadiene styrene.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: Alternately, transparent surface electrode is formed by performing chemical etching process to metal pattern. Preferred Compound: The nonelectroconductive polymer having hydroxyl group, is a polymer (A) having structural unit of formulae: -(CH2-C(-R1)(-Q1-A1-OH))-(I) and -(CH2-C(-R2)(-Q1-(A2)y-Z))- (II).R1,R2=H or methyl;Q1,Q2=-C(=O)O- or -C(=O)NRa-;Ra=H or alkyl;A1,A2=optionally substituted alkylene or -(CH2CHRbO)x-CH2CHRb-;Rb=H or alkyl;x=average repetition unit number;y=0 or 1;Z=alkoxy, -O-C(=O)-Rc, -O-SO2-Rd or -O-SiRe3;Rc,Rd,Re=alkyl, perfluoroalkyl or aryl;m+n=50-100;andm/(m+n)=0.2 or more.
TECHNOLOGY FOCUS - INDUSTRIAL STANDARDS - The silicon nitride film is formed by a chemical vapor deposition method. The impurity diffused layer is formed by thermal diffusion of phosphorus. The metal impurity is etched by aqueous alkali solution, particularly sodium hydroxide aqueous solution or potassium hydroxide aqueous solution, or aqueous acids, particularly diluted hydrochloric-acid aqueous solution.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The step of removing the substrate from the organic solution is performed at a constant speed of 10-150 mu m/s. The speed of removing the substrate is constant from a time period, when the substrate initially emerges from the organic solution to when the substrate is completely removed from the organic solution. Preferred Components: The solvent has a boiling point of 35-85 degrees C. The solvent includes acetone, methyl ethyl ketone, chloroform, dichloromethane, tetrahydrofuran, acetonitrile, benzene, cyclohexane, dichloroethane, ethanol, ethyl acetate and/or petroleum ether. The organic solute or organic thin film includes anthracene, tetracene, pentacene, merocyanine, copper phthalocyanine, perylene, rubrene, anthradithiophene, polyfluorene, polyacetylene, polydiacetylene, polythiophene, oligothiophene, polyisothinanaphthene, polyarylenevinylene, polyaniline, polycarbozole, polyfuran, polyacene or its derivatives. The organic thin film includes a crystals aligned in stripes. The organic thin film has: a carrier mobility of 0.1 cm2/Vs or more; and has a thickness of 10 nm to 5 mu m. The organic solute is included in the organic solution at a concentration of 0.1-2 wt.%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: Nano-texturing is carried out using a mixed solution of hydrofluoric acid, nitric acid, and ultrapure water in a ratio of 1:1-1:15 or 1:1-15:1. The auxiliary metal is silver, gold, iron, platinum and/or copper.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: In the method, the fuel cell is a polymer electrolyte membrane fuel cell. The method (III) further comprises regenerating the spent carbon dioxide adsorbent. The method (IV) further comprises regenerating the spent sulfur and/or carbon dioxide adsorbents by using gas streams comprising a steam or a mixture of steam and carbon dioxide free inert gases.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The (meth)acrylate monomer mixture (A2) contains 90-99.9 %mass of (meth)acrylate monomer, and 0.1-10 %mass of polyfunctional monomer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The reaction catalyst is platinum catalyst.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The aromatic group-containing dialkoxysilane is diphenyl dimethoxysilane, diphenyl diethoxysilane. The alkenyl group-containing trialkoxysilane is vinyl trimethoxysilane, allyl trimethoxysilane and/or p-styryl trimethoxysilane. The hardening agent is 1,4-bis(dimethylsilyl)benzene and/or tetramethyldisiloxane. The hardening agent is hydrosilyl group-containing siloxane having 1-12C alkyl group, aryl group and siloxane bonds. The hydrosilyl group-containing siloxane compound is obtained by cocondensing tetramethyldisiloxane and trialkoxysilane containing aryl group or 1-12C alkyl, or obtained using 5-50 mol% of mono or dialkoxysilane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The spherical particles has average particle diameter of 40-60 nm or 100-120 nm, and distance between particles of 120-180 nm or 300-360 nm. Preferred Composition: The content of spherical particle is 5-80 vol.% with respect to total content of transparent film. The spherical particles are particles containing metal oxide comprising silicon.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The transparent resin is epoxy resin and/or acrylic resin. Preferred Property: The refractive index difference of transparent resin and spherical particles is 0.1 or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Processes: Modification process is performed by carrying out free span conveyance of resin base material. Preferred Components: Perhydropolysilazan is used as inorganic precursor compound.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The coating resin is formed using a crosslinking agent as at least one portion of a monomer. The crosslinking agent is polyfunctional aromatic vinyl compound and/or polyfunctional (meth)acrylic acid ester. The coating resin is formed using a monofunctional monomer as at least one portion of a monomer. The polysiloxane is formed using hydrolyzate of an alkoxysilane, alkoxysilane, and/or their condensate. The ionomer resin is an ionomer of ethylene and an unsaturated carboxylic copolymer. The resin composition contains ionomer resin (100 parts mass) and near-infrared absorber (0.05-30 parts mass). The near-infrared absorber is obtained by dispersing the microparticles in a monomer to obtain a copper-salt-containing monomer, block polymerizing the copper-salt-containing monomer to obtain a polymer, and pulverizing the polymer. The content of monomer is 0.01-20 parts mass with respect to 1 part mass of microparticles. The near-infrared absorber is obtained by mixing the microparticles, and hydrolyzate of alkoxysilane, alkoxysilane, and/or their condensate. The polysiloxane is obtained by pulverizing the reaction material of silicon type compound. The content of silicon type compound is 0.3-20 parts mass by silica conversion with respect to 1 part mass of copper in microparticles.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The amount of carbon is preferably 1 %mass or less. The content of chalcogen compound powder in the alcohol is 20-80 %mass. The amount of solvent is 70 %mass or less with respect to water. The metal source is complex oxide of the mixture of a copper salt and indium salt or copper, and composite hydroxide of indium or copper and indium. The mixture contains gallium salt. The composite hydroxide contains gallium. The complex oxide contains gallium. Preferred Property: The boiling point of solvent is 200 degrees C or less.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The dispersion medium is alcohol. The solvent is methanol, ethanol, propanol, butanol, or pentanol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The molar ratio of sulfur atom with respect to sum total number-of-moles of sulfur atom and oxygen atom in the buffer layer is 0.3-0.6. The cadmium-free metal is metal(s) (unavoidable impurity may also be included) chosen from zinc, indium and tin, preferably zinc. The substrate contains a metal which can form a hydroxide ion and a complex ion. The main component of photoelectric conversion semiconductor layer contains compound semiconductor of Ib group element(s) chosen from copper and silver, IIIb group element(s) chosen from aluminum, gallium and indium, and/or VIb group element(s) chosen from sulfur, selenium and tellurium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The carbonyl ion is citrate ion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The passivation film is made of silicon oxide, silicon nitride, silicon carbide, aluminum oxide, amorphous silicon, microcrystal silicon or titanium oxide.    TECHNOLOGY FOCUS - METALLURGY - The electrode contains single units of boron, aluminum, gallium, phosphorus, arsenic, indium, antimony. The conductive paste is made of silver.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. EXAMPLE - Zinc porphyrin complex (1 equivalent), fullerene 60C (3 equivalent) and sarcosine (30 equivalent) were mixed, refluxed, distilled and purified using silica gel column chromatography, to obtain fullerene-type compounds.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The process further involves mixing the milled particles with a binder before the step of compressing the milled particles. Preferred Components: The binder comprises sulfur, corn starch and/or cesium chloride. The quaternary chalcogenide crystals are chosen from copper-zinc-tin sulfide (Cu2ZnSnS4) (CZTS), copper-zinc-tin sulfur selenide (Cu2ZnSn(Sa,Se1-a)4), CZTS/selenium and copper zinc tin selenide (Cu2ZnSnSe4).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The composition further comprises glass frit and an organic vehicle.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The conductive metal powder comprises silver or aluminum.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): No general preparation given. Preferred Composition: The fluorene-type compound (I), is preferably of formula (II) or (III).A1-A3= CR' or nitrogen;andR'=R1.Preferred Layer: The organic film layer has light-emitting layer, hole-transport layer, hole injection layer, electron-transport layer, electron injection layer and/or hole-blocking layer. The light-emitting layer has phosphorescence or fluorescence host material. SPECIFIC COMPOUNDS - 184 Fluorene-type compounds e.g. 3-(3-(3-((Z)-buta-1,3-dienyl)-2-methyl-benzofuran-7-yl)-phenyl)-9-(4,6-diphenyl-pyrimidin-2-yl)-9H-carbazole of formula (Ia), 3-(3-(3-((Z)-Buta-1,3-dienyl)-2-methyl-benzo(b)thiophen-7-yl)-phenyl)-9-(4,6-diphenyl-pyrimidin-2-yl)-9H-carbazole, 3-(3-(3-((Z)-buta-1,3-dienyl)-2-methyl-benzo(b)thiophen-7-yl)-phenyl)-9-(4,6-diphenyl-pyridin-2-yl)-9H-carbazole, 9-(4,6-bis-biphenyl-4-yl-(1,3,5)triazin-2-yl)-3-(3-(3-((Z)-buta-1,3-dienyl)-2-methyl-benzo(b)thiophen-7-y l)-phenyl)-9H-carbazole, and 9-(4,6-Bis-biphenyl-4-yl-pyridin-2-yl)-3-(3-(3-((Z)-buta-1,3-dienyl)-2-methyl-benzo(b)thiophen-7-yl)-phenyl)-9H-carbazole are disclosed.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The sulfocompound is sodium hydrogensulfite, sodium sulfite, potassium bisulfite and potassium sulfite. The platinum salt is chloroplatinic acid, potassium hexachloroplatinate, sodium chloroplatinate and platinum tetrachloride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The polyatomic alcohol is ethylene glycol or 1,5-pentanediol.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Layer: The organic thin film layer is light emitting layer, hole transport layer, hole injection layer, electron transport layer, electron injection layer or hole blocking layer. The organic thin film layer contains the compound (I). SPECIFIC COMPOUNDS - 138 Compounds (I) are specifically claimed, e.g. 9'-(4,6-diphenyl-(1,3,5)triazin-2-yl)-9'H-(9,3',6',9")tercarbazole of formula (A), 9'-(4,6-diphenyl-pyrimidin-2-yl)-9'H-(9,3',6',9")tercarbazole, 9'-(4,6-diphenyl-pyridin-2-yl)-9'H-(9,3',6',9")tercarbazole, 9'-(2-phenyl-quinazolin-4-yl)-9'H-(9,3',6',9")tercarbazole and 9'-quinoxalin-2-yl-9'H-(9,3',6',9")tercarbazole.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The ceramic powder comprises alumina powder, zirconia powder and yttrium oxide powder.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The formation of yttrium oxide film involves using material chosen from metal, ceramics, silicon, silicon carbide, quartz, glass, polymer and organic compound.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred: The electroconductive film contains aluminum oxide or gallium oxide (0.1-20 weight%) with respect to zinc oxide. The underlayer contains silicon, tin and/or aluminum. Preferred Property: The thickness of the electroconductive film is 45-500 nm.
TECHNOLOGY FOCUS - METALLURGY - Preferred Components: Barrier layer contains alloy consists of valve metal. Barrier layer contains inorganic oxides.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The distance (d) is 30-300 (preferably 40-200) mm. The maximum magnet energy products (BHmax) for the individual magnets of the first and second magnet arrays is greater than 200 (preferably greater than 300) k Joule (J)/m3 and less than 425 (preferably less than 400) kJ/m3. In the sputtering source each of the first and second magnet arrays further comprise a secondary magnet positioned in the center of the corresponding magnet array and oriented at opposite polarity of the magnets in the corresponding magnet array. The magnetic strength of the secondary magnet less than or equal to magnetic strength of any magnet in the corresponding magnet array. The magnets in each of the first and second magnet arrays are arranged to define an axis height (h) and axis width (w), set so that the flattening factor (f) which is equal to the ratio of the difference between (h) and (w) and (h) is above 0.65. Preferred Method: The step of forming the plasma cage comprises: positioning the first sputtering target within the vacuum chamber; positioning the second sputtering target within the vacuum chamber; providing the plasma power applicator; positioning the first magnet array behind the first target; and positioning the second magnet array behind the second target. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The photonic nanobars comprise tungsten, nickel, steel aluminum, aluminum alloys, noble metals, and near-noble metals, silver, and/or silver alloys.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal includes magnesium and iron. The metal silide includes magnesium silicide and beta -iron silicide. The eutectic or near-eutectic composition comprises magnesium (43-44 wt.%), silicon (54-56 wt.%) and iron (44-46 wt.%).
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Cell: The cell (S1) further comprises silicon dioxide, zinc oxide and/or tin oxide (0.1-9 wt.%); and an antireflective coating layer disposed on another portion of the n-type region. Preferred Components: The p-type silicon substrate is at least one of a polycrystalline silicon substrate or single crystalline silicon substrate.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition (C1) comprises boron nitride (0.005-8 wt.%); and aluminum powder (45-79 wt.%). Preferred Components: The boron nitride comprises amorphous boron nitride, cubic boron nitride and/or hexagonal boron nitride. The aluminum powder comprises nodular aluminum, spherical aluminum, flake aluminum and/or irregularly-shaped aluminum. EXAMPLE - Organic vehicle 1 comprising (%): terpineol solvent (46.7), dibutyl carbitol (40.9), and ethyl cellulose (12.4) was prepared. Organic vehicle 2 comprising (%): terpineol solvent (50) and dibutyl carbitol (50) was prepared. A composition comprising (g): the organic vehicle 1 (0.207), the organic vehicle 2 (0.023), aluminum powder (28.13) and boron nitride (0.64) was prepared.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The silicon solar cell further comprises a silicon wafer. Preferred Method: The application of the composition is performed by screen printing. The step of firing is performed as co-firing together with other front-side and/or back-side metal pastes that have been applied to the silicon wafer to form front-side and/or back-side electrodes on it during firing. EXAMPLE - Typical composition comprised (in wt.%) of: air-atomized aluminum powder (74) with average particle size of 6 mu m; organic vehicle of polymeric resins and organic solvents (26); and calcium carbonate (3).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The thin film solar cell is selected from the group IB-IIIA-VIA.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The lattice constant of unit crystal lattice of transparent conductive film in c-axial direction and a-axial direction is 5.23-5.28 Angstrom and 3.24-3.26 Angstrom , respectively. The density of transparent conductive film is 5.55-5.65 g/cm3. The transparent conductive film has a carrier concentration of more than 1x 1021/cm3 and band gap of 3.93-4 eV. Preferred Process: Film formation is performed by sputtering method.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: Metal (A) is hard to oxidize when compared with metal (B). Metal (A) is noble metal. Preferred Process: Vapor deposition is sputtering vapor deposition. The shell is porous shell.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transition metal is molybdenum.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The chlorosilane compound is trichlorosilane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The weakly bonded crystalline material exhibits at least one alphanumeric, and is chosen from graphite, mica, clay, hexagonal boron nitride, and transition metal dichalcogenide of formula: MX2 (M is molybdenum, niobium, tungsten or tantalum and X is sulfur, selenium or tellurium). The single discrete atomic dry layer of weakly bonded crystalline material is graphene. The crystalline material is optical transparent.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The element A is lithium, sodium, potassium, magnesium, calcium, strontium, silver, cadmium and/or zinc, the element B is magnesium, calcium, strontium or copper, and the element C is germanium, aluminum and/or gallium. The compound semiconductor contains dopant (A) chosen from zinc-copper, cadmium-copper, magnesium-copper, calcium-copper and strontium-copper, dopant (B) chosen from copper-zinc, silver-copper, lithium-copper, sodium-copper, potassium copper, magnesium-zinc, calcium-zinc and strontium-zinc, dopant (C) chosen from aluminum-tin, gallium-tin, germanium-tin and selenium-sulfur and composite dopant (D) chosen from aluminum-tin/selenium-sulfur, gallium-tin-selenium-sulfur, germanium-tin/selenium-sulfur, zinc-copper/aluminum-tin, zinc-copper/gallium-tin, silver-copper/selenium-sulfur, lithium-copper/selenium-sulfur, sodium-copper/selenium-sulfur, potassium-copper/selenium-sulfur, magnesium-copper/aluminum-tin, magnesium-copper/gallium-tin, magnesium-zinc/selenium-sulfur, calcium-copper/aluminum-tin, calcium-copper/gallium-tin, calcium-zinc/selenium-sulfur, strontium-copper/aluminum-tin, strontium-copper/gallium-tin, strontium-zinc/selenium-sulfur, cadmium-copper/aluminum-tin and cadmium-copper/gallium-tin. The main component has composition of formula: (Cu1-wAw)2(1+a)Zn1+b(Sn1-yCy)1+cS4(1+d) (I').
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The composite material comprises carbon, allotropes of carbon, or a nanometer conductive polymeric material. The allotropes of carbon comprises white carbon or chaoite, carbon black, glassy carbon, diamond, amorphous carbon, graphene, fulerene, graphite, carbyne, diatomic carbon, tricarbon, atomic carbon, graphitizable carbon, pyrolytic carbon and coke.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The conductive polymeric material comprises heterocycle, aromatic heterocyclic compound, polyacetylene, poly(arylene vinylene), polythiophene, polyaniline, and/or polypyrrole.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal comprises aluminum or gold. The metallic compound comprises manganese protoxide, zinc oxide and magnesium oxide. The compound of metal ions and acid ions includes calcium carbonate. The high polymer solution comprises boron, magnesium, aluminum calcium, manganese and zinc.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The compound of metal ions and acid ions includes phytochemicals consisting of lignans, oligosaccharides, polysaccharides, flavonoids, iridoids, fatty acids, scopoletin, catechin, beta-sitosterol, damnacanthal and alkaloids.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The chlorophyll comprise chlorophyll a, chlorophyll b, chlorophyll c1, chlorophyll c2, chlorophyll d, and chlorophyll e, and is in a powder state or in a liquid state.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The conductive polymeric material comprises heterocycle, aromatic heterocyclic compound, polyacetylene, poly(arylene vinylene), polythiophene, polyaniline, and/or polypyrrole. The high polymer solution further comprises vitamins and a high polymer of glucose. The high polymer of glucose comprises a compound consisting of potato starch, water chestnut starch, corn starch, sweet potato starch, lotus root starch, mustard powder and pueraria powder.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: (I) further comprises carbon support structures connected to respective catalyst compound particles. The transition-metal macrocycles are: cobalt (Co), iron (Fe), nickel (Ni), and manganese (Mn) phthalocyanines; Co, Fe, Ni, and Mn porphyrins; or their derivatives. The metallic nanoparticles are silver (Ag), Ni, Co, gold (Au), tungsten (W), molybdenum (Mo) and/or Mn. The metallic nanoparticles have diameters of 1-500 nm. The carbon support structures are carbon nanotubes, fullerenes, carbon nanofibers or carbon black. The transition-metal macrocycles are fully halogenated cobalt-dodecafluorophthalocyanine and/or fully halogenated cobalt phthalocyanine. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The substrate comprises gold, iron and/or stainless steel. The conductive colloids comprise carbon based nanoparticles, which are graphite flakes, carbon platelets, carbon nanotubes, laser-deposited amorphous carbon spheres and/or carbon black.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polyelectrolyte layer comprises polyacrylamide, polyallyl amines and/or polyamidoamines, and a copolymer of acrylamide and a quaternary ammonium salt.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The fuel is oxidized at the anode by the first catalyst, producing carbon dioxide bubbles, which are used to self-pump the fuel and ions, which are reduced at the cathode by the second catalyst. The fuel source comprises a single stream of fuel and electrolyte mixture.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first reducible metal ion comprises one or more of at least one coinage metal ion, at least one ion of an element from IUPAC group 11 or at least one silver ion. The second metal comprises at least one element from IUPAC groups 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13 or 14, preferably titanium or tin. The compound comprises at least one aromatic moiety. The compound comprises at least one cyclopentadienyl moiety or phenyl moiety. The compound is titanocene dichloride or phenyltintrichloride. The metal nanowire comprises an aspect ratio of 50-10000 and an average diameter of 10-300 nm. The metal nanowire comprises at least one silver nanowire. EXAMPLE - Ethylene glycol (EG, 300 ml), polyvinylpyrrolidone (3.4 g), and titanocene dichloride (12.6 mg) were added to reaction flask. This solution was degassed overnight by bubbling nitrogen into the solution using a Teflon (RTM: Fluoropolymer) tube at room temperature with mechanical stirring while at 100 rotations per minute. A stock solution of 0.50 M silver nitrate in EG was also degassed by bubbling nitrogen into the solution for at least 60 minutes. A syringe was loaded with 20 ml of the silver nitrate solution. The reaction mixture was heated to 145 degrees C under nitrogen and the silver nitrate solution was added at a constant rate over 25 minutes via a 12 gauge Teflon (RTM: Fluoropolymer) syringe needle. The reaction was held at 145 degrees C for 60 minutes then allowed to cool to room temperature to provide silver nanowire product.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The non-fluorene-type monomer contains (meth)acrylic-type monomer, monofunctional (meth)acrylate or alkyl methacrylate. The fluorene compound contains two or more polymerizable unsaturated bond. The fluorene compound is 9,9-bisaryl fluorene. The amount of fluorene compound is 2 mol% or less, preferably 0.05-1.2 mol% with respect to total amount of polymerization component.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: A gas cluster ion beam is irradiated to a base material, and the base material is cleaned and/or planarized. Evaporation-vaporization of an interlayer film forming material is carried out and the evaporated material is ionized to form an interlayer film. While adhering to the interlayer-film surface, without carrying out evaporation-vaporization of carbon-film forming material and ionizing the evaporated material, a gas cluster ion beam is irradiated to the carbon-film forming material and a film is formed. Preferred Components: The boron material is a boron compound consisting only of hydrogen and boron. The boron material contains boron compound(s) containing 1-18 boron atoms. The boron compound contains borohydride(s) containing 2-18 boron atoms. The forming material of interlayer film includes carbide and/or nitride of silicon, chromium, tungsten, titanium and/or molybdenum. Preferred Properties: The forming material of interlayer film has a thickness of 0.05-0.2 mu m. While increasing the content of carbon-film forming material from a base material incliningly towards a carbon film, the content of carbide and/or nitride of silicon, chromium, tungsten, titanium and/or molybdenum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The halogen is fluorine, chlorine, bromine or iodine. The halogen solution is aqueous solution or alcohol solution. The concentration of halogen solution is 0.001-1 weight%. The fuel cell bipolar plate is graphite. The carbon complex material is carbon-based filler and resin binder. The carbon-based filler is natural graphite, artificial graphite, expanded graphite, coke, carbon, carbon black, carbon fiber, carbon nanotube, graphene and/or graphene oxide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The resin binder is thermoplastic resin or thermosetting resin.
TECHNOLOGY FOCUS - INDUSTRIAL STANDARDS - The element's adhesiveness can be tested by a cross cut adhesion test based on Japanese Industrial Standard (JIS-K5600).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The barrier layer is formed by the chemical vapor deposition comprising silicon oxide or silicon oxynitride and silicon nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The first chamber of the gas distribution plate delivers a fluidizing gas; and the second chamber of the gas distribution plate delivers a silicon-bearing gas, where silicon-bearing gas and fluidizing gas are mixed together before entering the reaction chamber. An inert gas is introduced to inlet port(s) and comprises 2-10% of the total gas flow. The silicon-bearing gas is silane, disilane, trisilane, dichlorosilane, trichlorosilane, dibromosilane, tribromosilane, diiodosilane, tribromosilane, silicon tetrachloride, and/or silicon tetrabromide. The silicon-bearing gas is injected in combination with hydrogen chloride, where molar ratio of hydrogen chloride diluted with silicon-bearing gas is not exceeding 2%. The fluidizing gas is hydrogen, nitrogen, helium, argon, silicon tetrachloride, silicon tetrabromide, and/or silicon tetraiodide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first reducible metal ion comprises at least one of at least one coinage metal ion, at least one ion of an element from the international union of pure and applied chemistry (IUPAC) Group 11, or at least one silver ion. The other atom comprises at least one: oxygen atom; nitrogen atom; sulfur atom; phosphorus atom; or selenium atom. The second metal atom comprises at least one element from IUPAC Groups 3-10, preferably IUPAC Group 10. The second compound comprises at least one heterocyclic aromatic moiety, preferably a benzonitrile moiety, a bipyridine moiety, a terpyridine moiety, or a methylbenzimidazole moiety. The metal nanowire comprises at least one silver nanowire. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first reducible metal ion comprises a coinage metal ion, ion of element from international union of pure and applied chemistry Group 11, or silver ion. The lanthanide metal or ion of lanthanide comprises lanthanum, lanthanum ion, cerium, cerium ion, praseodymium, praseodymium ion, neodymium, neodymium ion, samarium, samarium ion, europium, europium ion, gadolinium, gadolinium ion, terbium, terbium ion, dysprosium, dysprosium ion, holmium, holmium ion, erbium, erbium ion, thulium, thulium ion, ytterbium, ytterbium ion, lutetium, or ion of lutetium ion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The first and second barrier layers comprise silicon dioxide, silicon nitride, or silicon carbide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The hygroscopic hydrolyzing chemical is sodium silicate or sodium silicide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compositions: Etchant contains hydrogen fluoride aqueous solution, nitric acid aqueous solution, and water or acetic acid, wherein volume ratio of hydrogen fluoride aqueous solution, nitric acid aqueous solution, and water or acetic acid is 0.01-20:250-350:50-150. Hydrogen fluoride aqueous solution contains 49 wt.% hydrogen fluoride. Nitric acid aqueous solution contains 70 wt.% nitric acid. Etchant comprises sodium hydroxide aqueous solution containing 45 wt.% sodium hydroxide. Etchant contains hydrogen fluoride aqueous solution, hydrogen peroxide, and water, wherein volume ratio of hydrogen fluoride aqueous solution, hydrogen peroxide, and water is 0.1-2:5-20:80-120. Light absorbing layer is made of crystalline silicon.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The rear electrode further comprises a glass frit. The glass frit is made of lead silicate glass, bismuth-based glass, or lithium-based glass.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The passivation layer is made of a silicon nitride-based compound. The buffer layer is made of aluminum oxide or aluminum oxynitride.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The silicon-aluminum eutectic alloy powder comprises (at.%) silicon (12) and aluminum (88).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The quaternary chalcogenide crystals consist of copper-zinc-tin-sulfide (Cu2ZnSnS4), copper-zinc-tin-selenide (Cu2ZnSnSe4), and copper-zinc-tin-sulfide-selenide (Cu2ZnSnSa, Se1-a)4, where a is 0-1.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The non-conductive polymer comprises an epoxy, an acrylic and/or polysiloxanes.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The heat treatment is carried out using high temperature and low temperature. The heat treatment under nitrogen atmosphere is carried out at 500-900 degrees C and the heat treatment under nitrogen and oxygen atmosphere is carried out at 1000-1200 degrees C; or heat treatment under nitrogen atmosphere is carried out initially at high temperature of 1000-1200 degrees C for 10-18 minutes and is carried out at low temperature of 500-900 degrees C, and the heat treatment under nitrogen and oxygen atmosphere is carried out at 1000-1200 degrees C; or heat treatment under nitrogen atmosphere is carried out initially at high temperature of 1000-1200 degrees C and is carried out at low temperature of 500-900 degrees C for 10-18 minutes, and the heat treatment under nitrogen and oxygen atmosphere is carried out at 1000-1200 degrees C.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass plate comprises (wt.%): SiO2 (54-58.5), Al2O3 (15-15.6), B2O3 (1.4-1.7), Na2O (2-8), K2O (1.4-2), MgO (1.4-2), CaO (2-9), BaO (6.5-10), and SrO (3.2-5.6), and sulfate (SO3), phosphate (P2O6), antimony oxide (Sb2O3), fluorine (F) and chlorine (Cl) (greater than 2%). Total weight of the Na2O and K2O is 1.4-12 wt.%. Total weight of MgO, CaO, and SrO is 13.1-17.3 wt.%. The glass plate has strain point temperature of higher than 620 degrees C, thermal expansion coefficient is 75-85x 10-7/K at 50-350 degrees C, thermal resistant stability of greater than 145K.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The film is formed by plasma-enhanced chemical vapor deposition.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): A silane derivative of formula (II) is reacted with oxidizing agent(s) chosen from sulfoxide derivative and metal oxide, water to obtain a disiloxane derivative of formula (III). A disiloxane derivative of formula (IV) is reacted with an alcohol of formula: R5-OH in the presence of a catalyst, to obtain a disiloxane derivative of formula (V).R3=3-6C alkyl except butyl, 2-4C alkenyl, 2-4C alkynyl, or H, when n is 4, and 2-6C alkyl, 2-4C alkenyl, 2-4C alkynyl, or H, when n is 5;X=chloro, bromo, or di(1-4C alkyl)amino;R5=1-3C alkyl or allyl;andR4=1-3C alkoxy or allyloxy. Preferred Definitions:    R1=H, methoxy, ethoxy, vinyl, allyl, ethynyl or propargyl.    SPECIFIC COMPOUNDS - 22 Compounds (I) are disclosed e.g. 1,1,3,3-di(butane-1,4-diyl)disiloxane of formula (IA), 1,3-diethoxy-1,1,3,3-di(butane-1,4-diyl)disiloxane, 1,3-diallyloxy-1,1,3,3-di(butane-1,4-diyl)disiloxane, 1,3-dipropyl-1,1,3,3-di(butane-1,4-diyl)disiloxane, and 1,3-diisopropyl-1,1,3,3-di(butane-1,4-diyl)disiloxane.    EXAMPLE - Tetrahydrofuran (50 mL) and distilled water (25 mL) were taken in a flask. 1-Chloro-1-silacyclopentane (9.23) was added over 30 minutes and stirred for 4 hours. Hexane (50 mL) was added to the obtained solution and moved to a separating funnel. The organic layer was washed with saturated salt solution and distilled water, dried, and concentrated. By vacuum-distilling, 1,1,3,3-di(butane-1,4-diyl)disiloxane (5.3 g) was obtained as colorless liquid with a yield of 74.4% and a purity of 99%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The thickness of monolayer is 100 nm to 30 mu m. The thickness of multi-layer is 100 nm to 4 mu m. The copper-indium-gallium sulfide composition has size of 10 nm to 10 mu m. Preferred Components: The copper-indium-gallium sulfide composition is copper-indium selenide, copper-gallium selenide, copper-indium selenide, copper-indium-gallium sulfide, copper-gallium sulfide, copper-silver selenide and copper-indium-gallium arsenide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The thickness of n-layer is 5-25 nm. The electrical contact layers are transparency.
TECHNOLOGY FOCUS - METALLURGY - The capsule comprises a material selected from gold, platinum, silver, palladium, rhodium, titanium, rhenium, copper, stainless steel, zirconium, and/or tantalum or their alloys. The cylindrical sleeve member is made of a material selected from stainless steel, iron, steel, iron alloy, nickel and/or nickel alloy. The high strength enclosure is made of a material selected from steel, low-carbon steel, SA723 steel, SA266 carbon steel, 4340 steel, A-286 steel, iron based super alloy, 304 stainless steel, 310 stainless steel, 316 stainless steel, 340 stainless steel, 410 stainless steel, 17-4 precipitation hardened stainless steel, zirconium and its alloys, titanium and its alloys, Monel, Inconel, Hastelloy, Udimet 500, Stellite, Rene 41, and Rene 88. The at least one continuous annular metal or cermet member has an inner diameter of 1.5-8 inches, a height of 1.5-8 inches, and ratio between the outer diameter and the inner diameter of 1.5-3.
TECHNOLOGY FOCUS - METALLURGY - The zinc-oxide type crystalline transparent conductive film consists of metal doped zinc-oxide chosen from aluminum, gallium, boron, indium, fluorine, silicon, germanium, titanium, zirconium or hafnium doped zinc-oxide. The indium oxide type transparent conductive film consists of metal doped indium oxide chosen from titanium, tin or gallium doped indium oxide.
TECHNOLOGY FOCUS - METALLURGY - The device comprises semiconductor layers and an active layer with an element made of aluminum, gallium, indium, arsenic, phosphorus, and nitrogen.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The soluble small molecular semiconductor material comprises 5,11-bis-trimethylsilanylethynyl-1,9-dithia-dicyclopenta(b,i)anthracene, 5,11-bis-trimethylsilanylethynyl-1,7-dithia-dicyclopenta(b,i)anthracene, 5,11-bis-((tri-tert-butylsilanyl)-ethynyl)-1,9-dithia-dicyclopenta(b,i)anthracene, 5,11-bis-((tri-tert-butylsilanyl)-ethynyl)-1,7-dithia-dicyclopenta(b,i)anthracene, 5,11-bis-triethylsilanylethynyl-1,9-dithia-dicyclopenta(b,i)anthracene or 5,11-bis-triethylsilanylethynyl-1,7-dithia-dicyclopenta(b,i)anthracene.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The soluble organic semiconductor material comprises a soluble polymer semiconductor material or a soluble small molecular semiconductor material. The soluble polymer semiconductor material is polythiophene, polyhexylthiophene, poly(3-hexylthiophene), poly(p-phenylene vinylene), poly(dioctylfluorene-co-benzothiadiazole), poly acetylene, polyprrole and/or polyailine. The water soluble photosensitive material comprises dichromated polyvinyl alcohol or a waterborne photoresist. The soluble organic semiconductor material and the water soluble photosensitive material have a same pattern. The active layer is located above the source and the drain or the source and the drain are located above the active layer. The active layer of each OTFT is located above the source and the drain or the source and the drain of each OTFT are located above the active layer. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The buffer layer contains arsenic compound of formula: As2X3. The light absorption layer contains copper-indium-gallium selenide (CIGS).X=6 group element.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The method utilizes doping source and an implantation type wafer molder, where the source is made of boron bromide, phosphorus oxychloride, and phosphoric acid and the molder is made of quartz glass, sapphire, alumina, and zirconia.    TECHNOLOGY FOCUS - METALLURGY - The method utilizes stainless steel, tungsten steel, and molybdenum steel.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: A solution (a) containing selenium powder, surfactant and solvent (I) is heated at 230-250 degrees C. A solution (b) containing copper amino alkoxide, indium amino alkoxide and solvent (II) is added to solution (a) and agitated. Preferred Components: The solvent (I) is hexadecane. The solvent (II) is toluene. The surfactant is hexadecylamine.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The silane coupling agent is methyltrimethoxysilane, tetraethoxysilane, methyltrichlorosilane, methyltrimethoxysilane, methyltriethoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriisopropoxysilane, ethyltributoxysilane, butyltrimethoxysilane, nonafluorobutylethyl trimethoxysilane, trifluoromethyl trimethoxysilane, dimethyldiaminosilane, dimethyldichlorosilane, dimethyldiacetoxysilane, dimethyldimethoxysilane, dibutyldimethoxysilane, and/or trimethylchlorosilane. The binder solution contains (in parts weight) silane coupling agent (10-15) and water (15-25). The spherical colloidal silica nanoparticles have a diameter of 10-100 nm. The colloidal silica complex compound solution contains silane coupling agent (10-20), colloidal silica (3-10), and alcohol (30-50). The usage amount of colloidal silica complex compound solution is 60-90 parts weight and the usage amount of binder solution is 10-40 parts weight. The pH is adjusted to 2-6 by addition of an acid stabilizer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The quaternary ammonium salt is tetrabutyl ammonium bromide, hexadecyl trimethyl ammonium bromide or dodecyl dimethyl benzyl ammonium chloride.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The concentration of the polyvinyl pyrrolidone ethanol solution is 10%. Preferred Process: The inorganic-organic precursor fiber is heated at 65 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The silicon raw material has iron concentration of less than 1015 atoms/cc, nickel concentration of less than 1014 atoms/cc and chromium concentration of less than 1014 atoms/cc.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The polyolefin microporous membrane is produced by a process that includes melting and mixing together at least polyolefin resin, organosiloxane particles and a plasticizer to obtain a melted mixture, molding and biaxially stretching the melted mixture to obtain a stretched film, and extracting and removing the plasticizer from the stretched film. Preferred Components: The organosilicone particles have an average particle diameter of 0.01-10 mu m. The organosilicone particles have a spherical or golf ball shape and comprise a polysiloxane cross-linked structure. The polysiloxane cross-linked structure comprises siloxane units of formulae (R1SiO(1.5)) (a) and (R2R3SiO) (b) or silicon dioxide (SiO2).R1-R3 = organic group having a carbon atom directly connected to a silicon atom.The polysiloxane cross-linked structure contains the siloxane units (a) and the sum of siloxane units (b) and SiO2 at a molar ratio of 100/0-50/50. The film that forms a surface layer and contains organosilicone particles at a rate of 5-60 mass %.
TECHNOLOGY FOCUS - POLYMERS - The electrically nonconductive material comprises polyoxymethylene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compound: The group II-VI compound is cadmium telluride. Preferred Composition: The junction partner layer comprises cadmium and sulfur. The molar ratio of cadmium with respect to tin in the cadmium-doped tin oxide is 0.1 or less. The molar ratio of tin with respect to indium in the tin-doped indium sulfide is 0.2 or less. The molar ratio of tin with respect to gallium in the tin-doped gallium sulfide is 0.2 or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The catholyte is a liquid or liquid slurry. The fixed anode active material is a paste. The fixed anode active material comprises a metal/metal oxide or metal/metal hydroxide matrix. The fixed anode active material preferably comprises zinc/zinc oxide.    TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Components: The separator arrangement includes a nonwoven or woven matt configured to retain electrolyte.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: When X is -O-M+, and M+ is H+, NH4+, K+, Li+ or Na+, the aprotic organic solvent is polar aprotic organic solvent. When X is F, Cl, Br or I, the aprotic organic solvent is apolar aprotic organic solvent. The content of fluorinated ion-exchange polymer in the liquid composition is 5 weight% or more. The liquid composition further contains catalyst particles. The chlorofluoroolefin is chlorotrifluoroethylene. Preferred Property: The aprotic organic solvent has boiling temperature of 50 degrees C or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Solvent: The organic solvent is ethylene glycol monophenyl ether or diethylene glycol monophenyl ether.    TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The paste further comprises resin(s) chosen from cellulosic resin, polyvinyl acetal resin, poly alpha -methylstyrene resin, polyalkylene oxide resin, and/or colophony resin. The (meth)acrylic resin contains polymethylmethacrylate (90 wt.% or more) and has a weight average molecular weight of 80000-1 million.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The component (B) is layered silicate with ion exchange capacity of 50-130 milliequivalent/g or layered silicate with 50-90 milliequivalent/g of exchangeable cation which can be substituted by organic onium ion. The component (B) is processed by silane coupling agent. The composition contains 100-250 parts weight of component (B) with respect to 100 parts weight of component (A).    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyimide is copolymer of tetracarboxylic anhydride and diamine compound. The tetracarboxylic dianhydride and diamine compound are aliphatic compounds. Preferred Property: The composite film has total light transmittance of 85% or more and haze of 3% or less.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The hydroxyl group-containing repeating unit (I) of modified cellulose fiber is obtained by contacting compound including hydroxyl group or halogen-containing repeating unit of formula (IV) and compound having aryl group. The hydroxyl group-containing repeating unit (II) of modified cellulose fiber is obtained by contacting hydroxyl group or halogen-containing repeating unit of formula (V) and compound having aryl group. The hydroxyl group-containing repeating unit (III) of modified cellulose fiber is obtained by contacting compound including carbonyl group-containing repeating unit of formula (VI) and compound having aryl group.Y'=hydroxy or halo;andd-f=1 or more.Preferred Composition: The resin having aryl group is phenol resin. The content of modified cellulose fiber is 0.1-99.9 %mass with respect to resin composition. The phenol resin is novolak-type phenol resin and/or resol-type phenol resin. Preferred Properties: The molded component has total light transmittance of 70% or more at thickness of 30 mu m, and bending strength of 50 N or more.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The photovoltaic cell is interposed with the sealing adhesive agent after the connection of tab wire, and laminated with surface sheet and back surface sheet.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Property: The electroconductive adhesive film has glass transition temperature of preferably 140-180 degrees C after hardening.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The total amount of silver and manganese oxide is 9.2-60%. The amount of silver manganate crystal used during manufacture of silver-manganese-carbon-containing catalyst is 23-138 mg. The carbon carrier used in catalyst is acetylene black, carbon nanotube and/or graphite. The inert gas is nitrogen, argon or helium.
TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The component (A) has viscosity average molecular weight of 2.2x 104-3.2x 104.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The ligand (C2) has one or two functional groups which is chemically bonded with a metal, and 1 or 2 lone pairs by which physical interaction between metals is possible. The ligand (C2) is compounds other than polyalkylene glycol. The central metal of metal complex (B) is beryllium, magnesium, zinc, aluminum, copper, platinum, europium, gallium, indium, cobalt and/or iridium. Preferred Properties: The boiling point of ligands (C1) and (C2) is 60-200 degrees C and 200 degrees C or more, respectively, under atmospheric pressure. The boiling point of ligand (C2) is higher than that of ligand (C1) by 30 degrees C or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The TCO nanoparticles comprise at least one dimension of size less than or equal to 200 (preferably 3-25) nm. The TCO nanoparticle includes a surface modification by an unsaturated moiety.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The unsaturated moiety is a moiety which comprises one or more pi-bond. The unsaturated moiety is optionally substituted alkene, alkyne or diene. The unsaturated moiety is of formula (R1-C?=C-R2) or (R3-C(R4)=C(R5)-C(R6)=C((R7)(R8))), preferably acetylene, ethylene, and/or butadiene.R1-R8 = H (preferred), an aliphatic species, an aromatic species or a halide, where the aliphatic species is CH3-, the aromatic species is C6H5-, or the halide is Cl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The method further comprises: reacting TCO nanoparticles with at least one unsaturated moiety to provide the surface modified TCO nanoparticles; and heating the TCO nanoparticles prior to reacting them with at least one unsaturated moiety, where the heating is carried out at a temperature of 250-550 degrees C. The reacting step comprises heating the TCO nanoparticles with the unsaturated moiety, where the heating is carried out at a temperature of 50-250 degrees C. The crosslinking step is by cycloaddition, photochemical reaction and/or thermal reaction. The applying step is by spin coating, spray coating, roller coating, chemical deposition, and/or physical vapor deposition. Preferred Components: The substrate is a plastic or glass substrate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The cell comprises an anti- reflective coating made of silicon mononitride, silicon dioxide, titanium dioxide or tantalum oxide.    TECHNOLOGY FOCUS - METALLURGY - The electrode layer is made of aluminum and silver.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metallic nanoparticle layer is printed with a mixture comprising nickel nanoparticles.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Process gas containing noble gas and/or nitrogen (90-99.9 volume%) and hydrogen (0.1-10 volume) during conversion of amorphous semiconductor layer to crystalline semiconductor layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The process gas contains hydrogen, tungsten, sulfur, nitrogen and argon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The solid reactant is solid sodium borohydride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method (M1), the anodization occurs at a voltage of at least 10V or at least 70V, or 120-150V. The anodization occurs for 40 hours or 45-47 hours. The method (M1) further involves rinsing the nanostructure array, and performing at least one subsequent anodization, where the subsequent anodization comprises providing a second electrolytic solution comprising a mixture of solvent, a halide-bearing species, and de-ionized water. The subsequent anodization occurs at a voltage of at least 10V or 35V, where the voltage is increased to a voltage of at least 50V at a predetermined rate, and where the subsequent anodization occurs for duration of at least 3 hours. Preferred Nanostructure Array: In the nanostructure array, the nanostructures comprise a pore size of at least 150 nm. Preferred Components: The concentration of the halide-bearing species is less than 0.5% (preferably 0.25-0.3%). The halide-bearing species is fluoride-bearing or chloride-bearing species. The halide-bearing species is HF. The substrate is titanium. The substrate can contain pre-existing nanostructures. The electrolytic solution comprises a mixture of solvent, halide-bearing species, and de-ionized water. The fluoride-bearing species is NH4F.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The units for restricting mass transport comprise providing an electrolytic solution having a mixture of solvent having a viscosity to restrict the mobility of ions, halide-bearing species, and de-ionized water. The units for restricting the mobility of ions comprise providing a substrate having pre-existing nanostructures.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent has a viscosity of 3-1000 cP. The solvent is selected from diethylene glycol (DEG) or ethylene glycol. The electrolyte is DEG. The solvent in the second electrolytic solution is formamide. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic thin film layer is layer containing complex oxide of silicon oxide and aluminum oxide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: An inorganic thin film layer is laminated on coating layer, or inorganic thin film layer is laminated on the coating layer and a protective layer is further provided on the inorganic thin film layer. Preferred Composition: The protective layer contains polymer comprising (meth)acrylic acid/(meth)acrylate copolymer containing homopolymer of (meth)acrylic acid or (meth)acrylic acid (10 %mass or more), and crosslinking agent chosen from polyurethane urea resin with ether bond, epoxy resin, polyisocyanate and silane coupling agent, or resin composition contains polyester resin having weight average molecular weight of 22000-40000 and polyisocyanate. The coating layers contain resin composition comprising resin having oxazoline group, and acrylic resin having carboxyl group, and the amount of resin having oxazoline group in resin composition for coating layers is 5.1-9 mmol/g. The resin composition for coating layers further contains urethane resin having carboxyl group. The content of resin having oxazoline group in resin composition for coating layers is 20-70 wt.%. The content of acrylic resin is 10-60 %mass in resin composition for coating layers. The content of urethane resin is 10-60 %mass in resin composition for coating layers. Preferred Properties: The urethane resin has acid value of 10-40 mg potassium hydroxide/g. The acrylic resin has acid value of 40 mg potassium hydroxide/g or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The substrate comprises a material selected from silicon dioxide, fused-silica, quartz, silicon, borosilicate glass, metal, hardened sapphire and a ceramic (preferably silicon). The conductive layer comprises a conductive metal. The electrodeposition is by potentiostatic, galvanostatic or by alternating current/voltage techniques. The preparation method further involves coating with a metal oxide or nitride.    TECHNOLOGY FOCUS - METALLURGY - The metal is selected from gold, silver, rhodium, copper, chrome, nickel, brass, iridium and/or their alloys.    TECHNOLOGY FOCUS - POLYMERS - The resist polymer comprises polymethyl methacrylate. The substrate comprises a material selected from organic polymers, siloxane polymers and fluorocarbon polymers.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The workpiece comprises an adhesion layer adjacent to the base body made of titanium, vanadium, chromium, chromium nitride, zirconium, niobium, molybdenum, hafnium, tantalum, silicon or nickel and/or their mixture. The base body made of steel, steel alloys, titanium, titanium alloys, aluminum, aluminum alloys, magnesium, magnesium alloys, copper, copper alloys, ceramic material, hard metal, tungsten, tungsten alloys, tantalum, tantalum alloys, nickel, nickel alloys, Silicon, silicon compounds, bronze, plastic and/or their mixture.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The carbon particles have average particle diameter of 20-100 nm and the polymer particles have average particle diameter of 100-600 nm. The dispersion liquid is sprayed such that the average liquid drop diameter of the droplets is 1-6 mu m. The average particle diameter of the porous carbon material is 500 nm-3 mu m and the microporous average hole diameter of the porous carbon material is 10-500 nm. Preferred Composition: The ratio of polymer particles with respect to the carbon particles in the dispersion liquid is 0.5-12. The porous carbon particles have outer shell portion formed with carbon and interior space currently formed in the outer shell portion. Preferred Process: The temperature at the time of forming mixed aggregate is 100-300 degrees C. The temperature at the time of removing polymer component is 400-1100 degrees C. The polymer component is removed in oxidizing gas atmosphere or inert gas atmosphere.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The reduced pressure is raised to 10-2 Pa or more, and the inert gas is introduced. The chamber is heated at 50-200 degrees C. The semiconductor melt is a silicon melt solution, germanium melt solution or gallium arsenide melt. Preferred Apparatus: The pressure reduction unit is a cryopump, a diffusion pump, a molecular pump or an ion pump. The manufacturing apparatus has a heating unit for heating chamber. The cooling plate is made of graphite.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Salt: The alkali metal salt is potassium carbonate, sodium carbonate, potassium fluoride, or cesium fluoride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The bidentate phosphine ligand is 1,4-bis(diphenylphosphino)butane or 1,1'-bis(diphenylphosphino)ferrocene. The palladium complex coordinated with bidentate phosphine ligand is dichloro(1,1'-bis(diphenylphosphino)ferrocene)palladium or dichloro(1,4-bis(diphenylphosphino)butane)palladium. The palladium complex coordinated bidentate phosphine ligand is synthesized from 1,4-bis(diphenylphosphino)butane or 1,1'-bis(diphenylphosphino)ferrocene, and bis(dibenzylidene acetone)palladium. The reaction is carried out under 2-50 equivalent coexistence of water with respect to phenyl boron compound. Preferred Definitions:    X=chloro;    R1=formyl;and    R2,R3=H, 1-4C alkyl, 1-4C alkoxy or fluoro.    EXAMPLE - Dichloro(1,1'-bis(diphenylphosphino)ferrocene) palladium (in mg) (7.3), 3-nitro phenylboronic acid (167) and sodium carbonate (212) were added to a reaction container, and argon substitution was carried out. Then, 1,4-dioxane (2 mL) and water (0.3 mL) were added. The mixture was cooled at -196 degrees C, chlorotrifluoroethylene (466) was added and sealed under argon airflow, heated at 100 degrees C and stirred for 2 hours. 1-Nitro-3-(trifluoro vinyl)benzene was obtained at yield of 84%. The mixture was filtered, concentrated and purified to obtain 1-nitro-3-(trifluoro vinyl)benzene (162) at yield of 77%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The perfluoro polyether structure of compound (A) is of formula: -(CaF2aO)z-. The compound (A) is preferably of formula: CH2-CH-(X)p-CF(-CF3)-(OCF2CF(-CF3))m-O-(CF(-CF3)CF2O)n-CF(-CF3)-(X')p-CH-CH2.z=50-600;X=-CH2-, -CH2O-, -CH2OCH2- or -Y'-NR1-CO;Y'=-CH2- or group of formula (i);R1,R2=H, methyl, phenyl or allyl;X'=-CH2-, -OCH2-, -CH2OCH2- or -CO-NR2-Ya;Ya=-CH2- or group of formula (ii);p=0 or 1;r=2-6;m,n=0-600;andm+n=50-600.The monoalkenyl compound (D) is linear polyfluoro monoalkenyl compound of formula: Rf2-(X')p-CH=CH2. The compound (C-1) is of formula (I). The compound (C-2) is of formula: (Mt-Si(-R5-3-t))i-Z-(Si(-R53-u)-Mu)j.Rf2=F-(CF(CF3)CF2O)w-CF(CF3)-;w=1-500;M=-(CH2)x-Si(-R6)2-H and -(CH2)x-Si(-R6)2-Q'-Rf4;R5,R6=1-20C monovalent hydrocarbyl;Q'=1-15C divalent organic group;Rf4=perfluoroalkyl or perfluorooxyalkyl;x=1-3;t=1-3;u=0-3;t+u=2-6;i,j=0 or 1;Z=H, -Q'-M' or -Q'-Rf4-;andM'=-(CH2)x-Si(-R6)2-H.When i and j are 1, Z is -Q'-, -Rf'- or -Q'-Rf'-Q'- (Rf' is perfluoroalkylene or perfluorooxyalkylene). Preferred Properties: The hardened material has solid substance persistence of 60 %mass or more with respect to concentrated sulfuric acid having concentration of 98 %mass measured at 40 degrees C for 500 hours.
Preferred Definitions:    R1=tetravalent phenylene, tetravalent tolylene, tetravalent xylylene, tetravalent biphenyl or group of formula (a), preferably tetravalent phenylene or tetravalent biphenyl;    R2=group chosen from groups of formulae (b)-(k), preferably group (i);and    R3=1-16C alkyl, 1-16C haloalkyl or halo, preferably halo or alkyl halide, more preferably 1-16C fluoroalkyl.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The hardening agent is phenol-type hardening agent, and has boiling point of 150 degrees C or more and is nonvolatile.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The curable composition further contains hardening accelerator. Preferred Properties: The hardened material of curable composition has bending elastic modulus of 12 MPa or less (preferably 10 MPa or less, more preferably 8 MPa or less) at 200 degrees C and 3200 MPa or more (3400 MPa or more) at 23 degrees C, and glass transition temperature of 180 degrees C.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The glass transition temperature of noncrystalline polymer which forms island portion with diameter of 30-200 nm, is 230-400 degrees C. The average ratio of length of island portion and breadth of island portion having diameter of 30-200 nm, is 1-20. The diameter of island portion is 1-30 nm. Preferred Component: The noncrystalline polymer is 5-(2-methyl-4-(2-(4-((2-methyl-1,3-dioxo-2,3-dihydro-1H-isoindol-5-yl)oxy)phenyl)propan-2-yl)phenoxy)-2-(4-((4-methylbenzene)sulfonyl)phenyl)-2,3-dihydro-1H-isoindole-1,3-dione. The island portion having diameter of 1-30 nm, contains polyether imide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The base material is glass substrate (2).    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The particle size of electroconductive polymer particles is 30 nm or less. The dry film thickness of electroconductive film is 25-380 nm. Preferred Composition: The total compounding quantity of binder component is 150-10000 parts weight with respect to 100 parts weight of electroconductive polymer particles in electroconductive coating composition. The compounding quantity of alkoxysilane oligomer (I) in binder component is 97-100 wt.%. The conductive polymer of electroconductive coating composition comprises composite of poly(3,4-disubstituted thiophene) and polyanion. The electroconductive coating composition further contains electroconductive improvement agent chosen from N-methylformamide and N-methylpyrrolidone.
TECHNOLOGY FOCUS - POLYMERS - Preferred Sheet: The area ratio of Mw of less than or equal to 2500 in gel permeation chromatography (GPC) measurement of soluble components of polymer (P) in ethyl acetate is greater than or equal to 50%. The polymer (A) comprises an acrylic polymer obtained by polymerizing a monomer composition containing (meth)acrylate monomer as a main component. EXAMPLE - A mixed solution of butyl acrylate (97 parts) and acrylic acid (3 parts), 2,2'-azobisisobutyronitrile (0.20 parts) as polymerization initiator, and ethyl acetate (200 parts) was subjected to polymerization at 60 degrees C for 12 hours to obtain a solution of polymer A. A mixed solution of butyl acrylate (95 parts) and acrylic acid (5 parts), benzoyl peroxide (0.20 parts) as polymerization initiator, and toluene (300 parts) was subjected to polymerization for 2 hours to obtain a polymer A1. A mixed solution prepared by adding TETRAD C (RTM: epoxy-based cross-linking agent) (2 parts) to polymer A (100 parts) was applied to base material surface which had been subjected to corona treatment so that the thickness of pressure-sensitive adhesive layer after drying was 15 mu m. Thus, a surface protective sheet (test) was produced. The resultant surface protective sheet was attached to a polyethylene film, and then left to stand at 40 degrees C for 2 days. A surface protective sheet (comparative) was prepared in same way as test sheet except polymer A1 was used in place of polymer A. Then both protective sheets were evaluated for adhesion of pressure-sensitive adhesive layer for coated steel plate having ten-point average surface roughness (Rz) of 8 mu m (N/20 mm) and results for test/comparative were: 0.76/0.24. Also there was no rain line mark or slightly observed for test, but the rain line mark remained for the comparative.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The oxide comprises: either zirconia doped with at least one of yttrium oxide, ytterbium oxide, calcium oxide, magnesium oxide, scandium oxide or cerium oxide; or ceria doped with at least one of yttrium oxide, ytterbium oxide, calcium oxide, magnesium oxide, scandium oxide or zirconium oxide.The anode is porous, where its porosity is infiltrated with an electrocatalyst.The electrocatalyst comprises at least one of praseodymium, cobalt, cerium, europium or other rare earth elements.The cathode comprises an electron-conducting phase comprising at least one of nickel oxide or magnesium oxide. In the electrolyzer cell, the perovskite (I) is of formula (Pr0.2La0.8Co0.8Fe0.2O3-m). Preferred Definitions:    A1 = at least one of calcium or strontium;    B1 = at least one of manganese, cobalt or iron; and    D1 = La.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The semi-aromatic polyamide resin is polymerized using phosphorus acid catalyst. Preferred Composition: The semi-aromatic polyamide film further contains phosphorus thermostabilizer of formula (I), bifunctional-type thermostabilizer and hindered phenol-type thermostabilizer having an amide group.R1-R4=H, 2,4-di-tert-butyl-5-methylphenyl or 2,4-di-tert-butylphenyl, preferably 2,4-di-tert-butyl-5-methylphenyl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic semiconductor compound has average particle diameter of 1-50 nm, and ratio of average particle diameter and average crystalline diameter of 1-3. The area ratio of the inorganic semiconductor compound in the region from the cathode side surface to 20% of thickness of film thickness is 75-100% in the cur surface of the thickness direction of the active layer.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The dispersing agent is compound having nitrogen atom, sulfur atom, fluorine atom, or carbonyl group in position other than polar group. The dispersing agent has electron-donating portion and electron-accepting portion, and the polar group having the electron-accepting portion. The dispersing agent is a compound having triple bond or hexahydrocyclopenta-indole compound of formula (I). The polar group is carboxyl group.R=H, alkyl, aryl, alkoxy, alkenyl, alkynyl or heteroaryl (disclosed)."N.B.: R is defined in disclosure, but not in claims."
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The copper/manganese catalyst further comprises at least one rare earth metal (preferably lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and/or lutetium; especially Lanthanum or Cerium). The copper/manganese catalyst comprises manganese and copper oxides supported on porous inorganic supports, where the porous inorganic supports are selected from aluminum oxide, silicon dioxide, silicon dioxide-aluminum oxide, titanium dioxide and magnesium oxide. Preferred Catalyst System: In the catalyst system, the mass ratio of copper to manganese on the second copper/manganese catalyst is 0.4-0.9 (preferably 0.5-0.75). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Organometallic precursor, and iron nitrate, gold chloride and/or copper oxide are optionally added, during production of monodispersed carbon spheres.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Condition: The mixture is heated at 540-650 degrees C, (preferably, 565 degrees C or less) for 40-130 minutes, (preferably, 45 minutes or less) under pressure of 1500-7500 psi. Preferred Process: The heated mixture is cooled to room temperature, before venting of carbon dioxide. An organic solvent is added to cooled mixture, and centrifuged, to extract the carbon spheres. Preferred Composition: The low-volatile solvent is chosen from squalane and squalene. The organometallic precursor is chosen from diphenylgermane, diphenylgermane, tetraethylgermane, triphenylgermane, and tetramethylgermane.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The amine is 2-dimethylamino ethanol and/or 2-diethylamino ethanol.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polyester resin is water-soluble polyester resin. Preferred Process: The polyester resin is dissolved in a solvent, or scattered by a colloid in solvent, and then mixed with polyethylene dioxythiophene aqueous solution. Preferred Property: The change rate of resistance value (in ohm/square) of conductive film is 10% or less, when performing humid-proof test at 60 degrees C and 90% humidity for 240 hours.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic layer is layer which consists of silicon oxide, silicon nitride, silicon oxynitride and silicon oxide zinc.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The monomer compound which has maleimide group is monomer compound which has maleimide group of formula (2). The polymerization initiator is compound containing the structural unit of formula (A). The organic layer and the inorganic layer are provided in the other surface of base material which is polyethylene naphthalate film or polyethylene terephthalate film.R1,R2=H, halo, alkyl, alkenyl or aryl group, or hydrocarbon group which is set to one and forms 5-membered ring or 6-membered ring;R3=alkylene group or substituents such as straight alkyl groups, Me, Et or branched alkyl;n=1-6;X=alkylene group or branch chained alkylene group;m=0-4; andn=2-5.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic layer contains silicon oxide, silicon nitride, silicon oxynitride and silicon zinc-oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The triplet sensitizers are chosen from benzophenone and/or thioxanthone.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The base material is chosen from polyethylene naphthalate or polyethylene terephthalate.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Composition: The oxygen mole concentration in the argon gas is set to 1/2 or less of the total of carbon monoxide mole concentration and hydrogen mole concentration, by adding hydrogen before contacting with metal oxide catalyst when oxygen mole concentration in the argon gas exceeds one half of total of carbon monoxide mole concentration and hydrogen mole concentration. The metal oxide catalyst is metal oxide other than metal which forms a metal carbonyl compound. The metal oxide catalyst is a copper oxide, a zinc oxide, or their mixture.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Processes: When heating temperature is set to a 1st predetermined temperature and heating process is performed, quantum dot containing CuO is produced. When heating temperature is set to a 2nd predetermined temperature which is higher than the 1st predetermined temperature and heating process is performed, quantum dot containing Cu2O is produced. Bulk material is irradiated with laser beam to produce quantum dot aggregate. Preferred Conditions: The 1st predetermined temperature is 600-700 degrees C. The 2nd predetermined temperature is greater than or equal to 900 degrees C. Preferred Parameters: Collected copper oxide quantum dot has average particle diameter of greater than or equal to 9 nm. Preferred Components: Bulk material is a ceramic rod which has CuO or Cu2O as main component.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Electroconductive material is intercalated using an electroconductive material solution containing expanded graphite and electroconductive material. The electroconductive material pressurizes the expanded graphite intercalated by the interlayer at the thickness direction. The manufacture of heat conductive sheet further involves performing integration sintering of electroconductive material layer and graphene by heating.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The group 2 element is calcium or magnesium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The solid wax is fatty acid ester and/or fatty acid amide. The solid wax has a melting point of 50-160 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic pigment comprises white pigment, preferably titanium oxide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The rubber reinforced aromatic vinyl-type resin (100 %mass) further contains (meth)acrylate compound unit (30-90 %mass).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The addition amount of hydrogen peroxide is 2 molar equivalent or more with respect to germanium. Preferred Process: The germanium chloride collected is hydrolyzed.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The electrolyte solution which contains at least one sort of alkali comprises 4-tert-butylpyridine and N-methylbenzimidazole.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The electrolyte solution which contains at least one sort of solvent comprises nitrile compound, lactone compound, carbonate compound, ethers, alcohol and sulfones.
TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Method: The printing method is inkjet printing, screen printing, relief printing, offset printing, gravure printing, micro contact printing, and/or nanoimprinting.    TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The binder resin is cellulose resin and/or acrylic resin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The guest pigment molecule is porphyrin-type dye, phthalocyanine-type dye, carotenoid-type dye, naphthalene tetracarboxylic acid diimide-type dye, or their derivatives. The porphyrin-type dye is tetrakis(4-pyridyl)porphyrin. The host molecule is 2,3,6-tri-O-methyl( beta )-cyclodextrin. The inclusion complex has crystal lattice of triclinic system containing one molecule of porphyrin and two molecules of cyclodextrin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The photo-curing ink composition comprises sensitizer, scavenger, stabilizer, antifoaming agent, moisturizer, pH buffer solution, photocure monomer, surface tension modifier, and water or vegetable oil.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The amine compound is of formula: R5-N(-R4)-R6 (I), R8-N(-R7)-CH2-CH2-OH (II) or of formula (III). The amine compound is optionally substituent by nitrogen-containing aromatic heterocyclic compound. The organic titanate is of formula (IV).R1-R3=H or monovalent substituent;R4,R6=H, alkyl, alkoxy, aryl, or alkyl carbonyl (all optionally substituted), preferably alkyl or hydroxy;R7,R8= alkyl, aryl, or alkyl carbonyl (all optionally substituted), methyl or hydroxyethyl;R9-R13=H, alkyl, alkoxy, alkylamino, aryl, or alkyl carbonyl (all optionally substituted), amino, hydroxy, N-alkyl carbamoyl, or alkoxycarbonyl, preferably H;n,p=0-4;R=alkoxy;andq=0 or 1.(i) When p+n is 4, then q is 0; and (ii) When p+n is 2 then q is 1.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The total content of pyridimine-type compound (I) and tetrazole-type compound (II) is 0.01-10 %mass with respect to content of silver. The mass ratio of pyridimine-type compound (I) and tetrazole-type compound (II) is 1:99-99:1. The distance between the patterns in conductive layer, is 50 mu m or less. Preferred Process: The conductive layer is further subjected to patterning process, and developed, during manufacture of electroconductive material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The carrier is active carbon, carbon nanotube, graphene, or titanium dioxide. The weight-to-volume ratio (g:L) of urea and ethylene glycol is 50-500:200 (preferably 50-100:200). Preferred Method: The method includes ultrasonically dispersing carrier in deionized water to obtain first solution, adding urea and ultrasonically dispersing to obtain second solution, adding chloroplatinic acid solution, and heating to 70-95 degrees C for 0.5-3 hours; adding ethylene glycol and heating to 100-140 degrees C for 0.5-3 hours; and washing obtained catalyst with deionized water and drying.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The solvent thermal reaction kettle lining filling ratio of powder core is 80%. The solvent thermal reaction obtained after sample uses HCl aqueous solution (0.1 mol/L) for 24 hours ion exchange. The obtained product after ion exchange is subjected to calcining at 400 degrees C for 2 hours.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The alkali is sodium carbonate, potassium carbonate or cesium carbonate.    TECHNOLOGY FOCUS - POLYMERS - Preparation (Claimed): The preparation of (I) comprises carrying out nucleophilic substitution reaction of 4,4'-(9H-fluorene-2,7-diyl)diphenol- imidazole based monomer of formula (II) and bis(4-fluorophenyl)methanone, 4,4'-sulfonylbis(chlorobenzene), perfluorobiphenyl or 4,4'-sulfonylbis(1,2-difluorobenzene) in the presence of an alkali under the inert atmosphere. Preferred Method: The method comprises: (i) dissolving monomers, toluene and alkali dissolved in a solvent, reacting for 4-8 hours at 110-130 degrees C, boiling toluene and water generated in the reaction system to remove water, where the solvent is N,N-dimethylformamide, dimethyl sulfoxide or N-methyl-2-pyrrolidone; and (ii) increasing the reaction temperature to 140-170 degrees C, where the reacting temperature is not greater than boiling point of the solvent and reacting for 4-30 hours.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polyphenyl carbosilane is of formula (I).x=1-2;andy=0-1.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The first transparent electrode is surface-polished using a coating solution containing an alkylsilane type compound (0.1-2 wt.%) of formula: Ar1-Ar2-Si(-Cl)3, Ar3-Ar4-Si(-OCH3)3, or Ar5-Ar6-Si(-OC2H5)3.Ar1=CH3 or CF3;Ar2=(CH2)n or (CF2)n;n=3-18;Ar3,Ar5=CH3(CO)2O or NH2;andAr4,Ar6=(CH2)n.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The iridium pioneer is hexachloro iridium acid hydrate or iridium chloride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The polycrystalline silicon wafer is annealed in air or inert gas that is chosen from nitrogen, argon and helium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The surface active agent is sodium dodecyl sulfate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The organic solvent is ethanol, pentanol and/or normal heptane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The relative density of oxide sinter is 93% or more. Preferred Gas: Sintering during manufacture of film forming material is carried out in atmosphere containing nitrogen, argon, helium, carbon dioxide, vacuum, and/or hydrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The mold consists of graphite dies and a graphite punch.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: Preferably, boria is not contained. The alkali-free glass further comprises tin oxide (0.001-1), and has a Young's modulus of greater than 78 GPa, a liquidus temperature of less than 1250 degrees C, a temperature of 1660 degrees C or less at 102.5 poise, and a viscosity of 104.8 poise at liquidus temperature. The ratio of Young's modulus and density is greater than 29.5 GPa/g.cm-3.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The first electrode is a transparent conductive oxide (TCO) layer which is made of zinc oxide, tin dioxide, indium tin oxide, and indium oxide.    TECHNOLOGY FOCUS - METALLURGY - The TCO layer is made of aluminum, silver, copper, molybdenum, and alloys.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The methods (M1) and (M2) further comprise a step of forming a diffusion barrier layer on the substrate before the back electrode layer is formed. The selenization process enables selenium to diffuse from an upper surface of the precursor layer into the precursor layer, where the precursor layer further includes selenium. Preferred Components: The thin-film solar cell further comprises the diffusion barrier layer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The alkali layer is formed of an alkali metal including lithium, sodium, potassium, rubidium, cesium or their chemical compounds, or formed of a sulfide, where the sulfide is lithium sulfide, sodium sulfide, potassium sulfide, rubidium sulfide or cesium sulfide. In the selenization process, a selenium source is used, where the selenium source is hydrogen selenide, selenium, selenium vapor or diethylselenide. The precursor layer further includes silver and aluminum. The back electrode layer is formed of a material comprising of molybdenum, silver, aluminum, chromium, titanium, nickel or gold, or formed of a material consisting of fluorinated tin oxide, indium tin oxide, zinc oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, boron-doped zinc oxide or indium zinc oxide. The buffer layer is formed of a material consisting of cadmium sulfide, zinc sulfide, indium(III) sulfide, cadmium selenide, zinc Selenide, indium(III) selenide, titanium dioxide, tin oxide, zinc oxide or zinc magnesium oxide. The front electrode layer is formed of a material comprising of fluorinated tin oxide, indium tin oxide, zinc oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, boron-doped zinc oxide or indium zinc oxide. The alkali metal sulfide is lithium sulfide, sodium sulfide, potassium sulfide, rubidium sulfide or caesium sulfide. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal precursors for forming core particles are metal compounds comprise at least one of palladium, copper, gold and iridium. The metal precursors for forming shell layers comprise at least one of platinum, iridium and gold. The metal precursor is hexachloroplatinic acid. The metal precursors are metal acetylacetonate of at least one of palladium, copper, gold and iridium. The metal precursors for forming core particles are palladium(II) acetylacetonate and copper(II) acetylacetonate. The core particles are supported through out the support by a reaction of a support and metal precursors for forming core particles in an ether-based solvent. The metal compound is metal acetylacetonate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The amine based reducing agent is further used in the preparation of the core support. The ether based solvent is benzyl ether. The ester based reducing agent is Hantzsch ester or its derivative. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Arrangement: A heat generator is provided for giving heat with respect to the circulating fluid. The heat exchanger heat-exchanges between air of the to-be-air-conditioned area and circulating fluid, and warms air.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The metal is silver (alloy) or gold (alloy), or metal oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The solvent is water, monohydric alcohol, and/or polyhydric alcohol. The monohydric alcohol is methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, and/or 2-methyl-2-propanol. The polyhydric alcohol is ethylene glycol, propylene glycol, and/or glycerol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The material contains doped material chosen from silicon carbide, gallium nitride, gallium phosphide, gallium sulfide, aluminum astatide, aluminum phosphide, cadmium sulfide, zinc telluride, zinc selenide, zinc sulfide or their alloy, and nitrogen (0.01-10%). The multiple bandgap material further contains absorbing layer and emitter layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The ion implanted dopant has phosphorus and the additional dopant introduced for diffusion are introduced in the form of phosphorus oxychloride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The insulating layer contains aluminum oxynitride, silicon oxynitride, titanium-oxynitride, aluminum nitride, silicon nitride, titanium nitride, magnesium fluoride, zinc sulfide, aluminum oxide, silicon oxide, titanium oxide, magnesium oxide and/or cerium oxide. Preferred Property: The insulating layer has thickness of 50-300 nm.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The p-type organic-semiconductor materials have number average molecular weights of 15000-50000. The heterocyclic organic compound of formula (1) has nitrogen atom even if there is X1-X4 or X5-X8. The heterocyclic organic compound of formula (1) has a structure of formulae (2), (3) and (4). The work function of the 1st electrode is reverse laminated constitution smaller than the work function of 2nd electrode.X11-X13=-CR2=;R2-R6=substituent chosen from (cyclo)alkyl group, fluorination alkyl group, (hetero)aryl group, and alkylsilyl group in which the substituent may combine with each other and form a ring; andZ1=atom chosen from C, Si and Ge. Preferred Definitions:    X1=X5;    X2=X6;    X3=X7;    X4=X8;    X12=-N=; and    Z1=C or Si.
TECHNOLOGY FOCUS - METALLURGY - The heating element in the manufacturing apparatus is made of tungsten, molybdenum, kanthal (RTM: iron-chromium-aluminium (FeCrAl) alloy) or silicon carbide (sic).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The super-hydrophobic material comprises oxide of metals and soda lime glass, quartz glass or sand.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Components: The first cells and the second cells include a same number of photovoltaic units. In the thin film solar cell module the second cells are positioned within 4 cm from an edge of the substrate. In the photovoltaic units positioned in the same layer, voltage of the second cells is higher than voltage of the first cells, and current of the first cells is higher than current of the second cells. The photovoltaic unit of the first cells and the photovoltaic unit of the second cells in the same layer comprise at least one intrinsic semiconductor layer containing amorphous silicon germanium, where the intrinsic semiconductor layers of the first cells contain germanium with higher concentration than that of the intrinsic semiconductor layers of the second cells. The concentration of germanium contained in the intrinsic semiconductor layers of the first cells is reduced as the first cells are closer to the edge regions. The band gap energy of the intrinsic semiconductor layers of the first cells increases as the first cells are closer to the edge regions. The photovoltaic unit of the first cells and the photovoltaic unit of the second cells in the same layer comprise at least one intrinsic semiconductor layer containing micro crystalline silicon, where the intrinsic semiconductor layers of the first cells contain germanium with higher crystallinity than that of the intrinsic semiconductor layers of the second cells, and the crystallinity of the second cells is lower than crystallinity of the first cells by 7-10%. The thin film solar cell module further comprises: at least one seed layer coming in contact with the intrinsic semiconductor layers of the first cells; and at least one seed layer coming in contact with the intrinsic semiconductor layers of the second cells, where the seed layers of the first cells have higher crystallinity than that of the seed layers of the second cells.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The target and subtarget are provided with boron, phosphorus and arsenic.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The p-type dopant is magnesium. The p-type nitride compound semiconductor crystal containing indium is indium nitride, indium-gallium nitride, indium-aluminum nitride, and/or indium-aluminum-gallium nitride. The substrate comprises silicon, sapphire, silicon carbide, and/or gallium nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The zinc oxide-type transparent conductive film further contains silicon and indium. The atomic ratio of silicon and sum of zinc, silicon and tin is more than 1 atomic% to less than 8 atomic%, and atomic ratio of tin and sum of zinc, silicon and tin is more than 0.1 atomic% to less than 1 atomic%, when silicon acts as donor. The atomic ratio of gallium and sum of zinc, gallium, indium and tin is more than 1 atomic% to less than 8 atomic%, and atomic ratio of indium and sum of zinc, gallium, indium and tin is more than 0.1 atomic% to 1 atomic%, when gallium and indium act as donor. The atomic ratio of gallium and sum of zinc, gallium, silicon and tin is more than 1 atomic% to less than 8 atomic%, and atomic ratio of silicon and sum of zinc, gallium, silicon and tin is more than 0.1 atomic% to 1 atomic%, when gallium and silicon act as donor. Preferred Property: The transparent conductive film has thickness of less than 200 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent conductive layer is made of transparent conductive oxide selected from a group consisting of doped zinc oxide, doped tin oxide, doped indium oxide, and cadmium stannate. The hydrophilic oxide is selected from a group consisting of silicon oxide and aluminum oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The injection layer is made of molybdenum oxide i.e. molybdenum trioxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The electrode pattern is formed of tungsten and dielectric pattern is formed of silicon oxide and silicon nitride. The electrode layer is formed of indium tin oxide and zinc oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The material of the moisture absorbent is selected from zeolite, barium oxide, and/or calcium oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The glass component further comprises 2-25 mol.% (vanadium pentoxide (V2O5)+ phosphorus pentoxide (P2O5 )+ antimony pentoxide Sb2O5), lithium oxide (1-15 mol.%), sodium oxide (8-25 mol.%), potassium oxide (8-25 mol.%), titania (8-22 mol.%), silica (25-50 mole.%), vanadium pentoxide (2-18 mol.%), and phosphorus pentoxide (0.2-5 mol.%). The first glass composition comprises lead (II) oxide (50-65 mol.%), B2O3+SiO2 (5-75 mol.%), 1-20 mol.% of a trivalent oxide of an element consisting of aluminum, gallium, indium, scandium and/or yttrium, and alumina (0.1-8 mol.%), less than 55 mol.% of zinc oxide (ZnO), 5 mol.% of zirconia (ZrO2), less than 40 mol.% of (Li2O+Na2O+K2O), less than 20 mol.% of (TiO2+ZrO2), 5-85 mol.% of bismuth oxide (Bi2O3), and less than 40 mol.% of (Sb2O5+ niobium pentoxide (Nb2O5)). The element has an atomic number of from 57 to 71. The second glass composition comprises 30-40 mole.% of (Li2O+Na2O+ K2O), 2-26 mol.% of TiO2, 5-75 mol.% of (B2O3+SiO2), less than 30 mol.% of (V2O5+P2O5+Sb2O5), less than 30 mol.% of(magnesium oxide (MgO)+ calcium oxide (CaO)+ barium oxide (BaO)+ strontium oxide (SrO)), and ZnO (less than of 55 mol.%).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: The porous substrate is chosen from oxide ceramics, alumina, titania, zirconia, non-oxide ceramics, silicon carbide, silicon nitride, sintered metal, porous metal, stainless steel, nickel, sintered metals with ceramic surfaces, porous metals with ceramic surfaces, and Vycor (RTM: porous glass).    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The sulfur-resistant palladium alloy composite membrane further comprises porous zirconia coated on stainless steel support, and sealant. The content of gold in palladium-gold alloy is 5-50 %mass. Preferred Properties: The thickness of palladium layer and secondary layer material is 1-7 mu m. The pore size of porous substrate is 20-80 nm. The thickness of palladium-gold alloy is 2-10 mu m, preferably 2-5 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconducting material is silicon, silicon alloys, and silicon compounds. The particles are silicon, silicon oxides, silicon nitride, aluminum oxides and/or aluminum silicate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The antireflective layer consists of silicon oxide (SiO2) and silicon nitride (Si3N4). The photovoltaic layer consists of amorphous silicon and the substrate consists of crystalline silicon. The DBR period consist layer of silicon oxide and amorphous silicon, and the phase matching layer consists of silicon oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The n-type impurity is phosphorus and/or antimony. The n-type impurity-containing material comprises phosphorus oxide, phosphorus pentoxide, antimony oxide, silica, potassium oxide, sodium oxide, lithium oxide, barium oxide, strontium oxide, calcium oxide, magnesium oxide, beryllium oxide, zinc oxide, lead oxide, cadmium oxide, vanadium pentoxide, tin oxide, zirconium oxide, titania and/or molybdenum oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The glass power containing the p-type impurity is boron trioxide, alumina, gallium trioxide, silica, potassium oxide, sodium oxide, lithium oxide, barium oxide, strontium oxide, calcium oxide, magnesium oxide, beryllium oxide, zinc oxide, lead oxide, cadmium oxide, vanadium pentoxide, tin oxide, zirconium oxide, titanium oxide or molybdenum trioxide. The p-type impurity is boron, aluminum or gallium.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - The n-type impurity is chosen from phosphorus and antimony. The p-type impurity is chosen from boron, aluminum and gallium. The glass powder contains n-type impurity chosen from phosphorus oxide and antimony oxide, or p-type impurity chosen from boron trioxide, aluminum oxide and gallium oxide, and glass component substance chosen from silicon dioxide, potassium oxide, sodium oxide, lithium oxide, barium oxide, strontium oxide, calcium oxide, magnesium oxide, beryllium oxide, zinc oxide, lead oxide, cadmium oxide, vanadium oxide, tin oxide, zirconium oxide, titanium dioxide and molybdenum oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The aluminum nitride layer, aluminum oxide layer, chromium layer and nickel layer are stacked on the aluminum containing metal layer. The steel plate is plated with aluminum, silicon and copper. The steel plate is heat processed using ammonia or hydrazine and is anodized using sulfuric acid alumite, oxalic aid alumite or chromic acid alumite.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The fluorine-containing chain-shaped ether is of formula: Rf1-O-Rf2. The fluorine-containing chain ether is 1,1,2,2-tetrafluoroethyl-2,2,3,3-tetrafluoropropyl ether, 2,2,3,3,3-pentafluoropropyl-1,1,2,2-tetrafluoroethyl ether, 1,1,2,2-tetrafluoro-3-(1,1,2,2-tetrafluoroethoxy)propane, 1,1,1,2,3,3-hexafluoro-3-(2,2,3,3,3-pentafluoropropoxy)propane, 1,1,1,2-tetrafluoro-3-(2,2,3,3-tetrafluoropropoxy)propane and 1,1,1,2,2-pentafluoro-3-(2,3,3,3-tetrafluoropropoxy)propane. The nitrile compound is of formula: R1-(CN)n, preferably acetonitrile, propionitrile or glutaronitrile. The volume ratio of the nitrile compound and fluorine-containing chain ether is 10/90-99/1. The electrolytic salt is tri-ethyl-methyl ammonium salt, tetraethylammonium salt or spirobipyridinium salt.R1=1-10C alkyl or 1-10C alkylene;Rf1=1-10C fluoroalkyl;Rf2=1-4C alkyl having fluoro;andn=1 or 2.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The alkali-free glass is free of boria, and contains tin oxide (0.001-1). The glass has a Young's modulus of 78 GPa or more, a Young's modulus/density ratio of 29.5 GPa/g.cm3 or more, a liquidus temperature of 1250 degrees C or less, a temperature of 1660 degrees C or less corresponding to a viscosity of 102.5 poise, and a viscosity of 104.8 poise or more at liquidus temperature.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic fine particles contain inorganic fine particles having average particle diameter of 14-30 nm and inorganic fine particles having average particle diameter of more than 30 nm in mass ratio of 1/9-9/1.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The inorganic fine particles are surface-treated using 5-40 parts mass of silane compound of formula: H2C=C(-R1)-C(=O)-O-(CH2)a-SiR2b(OR3)3-b or 5-40 parts mass of silane compound of formula: X-(CH2)c-SiR4d(OR5)3-d.R1=H or methyl;R2=1-3C alkyl or phenyl, preferably methyl;R3,R5=H or 1-10C hydrocarbyl, methyl or ethyl;a=1-6, preferably 2 or 3;b=0-2, preferably 0 or 1;X=6-12C aromatic group, phenyl;R4=1-3C alkyl or phenyl, methyl or phenyl;c=0-6;andd=0-2.Preferred Components: The (meth)acrylate compound (b) has three ethylenically unsaturated groups, and does not have ring structure. The (meth)acrylate compound (b) has one ethylenically unsaturated group and alicyclic structure. Preferred Properties: The glass transition temperature of the homopolymer of the (meth)acrylate compound (b) is 80-300 degrees C. The absolute value of the refractive index temperature dependence coefficient of the hardened material is 7x 10-5/ degrees C or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The surface of the substrate is formed from germanium oxide, silicon oxide, nitride, or oxynitride, silicon, compound semiconductors, or a polymeric material. The dendritic metal structure is formed from silver (preferred) or copper. Preferred Parameter: The dendritic metal structure is no more than 200 nm in average thickness.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The glass has chromaticity coordinates X of 0.22-0.4 and Y of 0.25-0.35. Preferred Composition: The glass comprises (in mol%) phosphorus pentoxide (27.5-44.4, preferably 35-40), tin oxide (0.1-40, preferably 20-40 or 1-5), zinc oxide (30-71, preferably 30-48 or 50-60), manganese oxide (0.1-2.4), and oxide of formula: MmOn (0-10), where M is titanium, zirconium, vanadium, niobium, chromium, nickel, copper, boron, aluminum, silicon, chlorine, gallium, germanium, arsenic, selenium, cadmium, indium, antimony, tellurium, mercury, thallium, bismuth, sulfur, and/or rare-earth element, and m and n are 1 or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: Fatty acid (I) is carboxylic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The substrate is made of silicon, germanium, sapphire, silicon carbide, zinc oxide, lithium gallate, lithium tantalite, silicon germanium, lithium niobate.    TECHNOLOGY FOCUS - METALLURGY - The metal is selected from one of gallium, indium, and aluminum.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Components: Elimination apparatus is combustion elimination apparatus. Silica recovery unit is a filter which captures silica produced by the elimination apparatus.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameters: The Brunauer-Emmett-Teller (BET) specific surface area of recovered silica is 1-1000 m2/g.
TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Method: The printing method is inkjet method, screen printing method, relief printing method, offset printing, gravure method, micro contact printing method or nano imprint method.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The binder resin is cellulose resin and/or acrylic resin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Elements having less than or equal to 6 valence electrons are indium and zinc. Electrode layer of solar cell contains platinum, titanium, aluminum, and/or silver, and negative electrode layer contains indium tin oxide, fluorine-doped tin oxide, and/or aluminum zinc oxide. Light absorbing semiconductor layer contains dye-adsorbed titanium dioxide, zinc oxide, and/or quantum dots of groups III-V elements.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The PVBC and TTMPP are initially introduced into the mixture to be equimolar. The crosslinker is of the ex-situ type. The cross linker is 4,4'-bis(chloromethyl)-1,1'-biphenyl. The aprotic solvent is nitrogen based. The aprotic solvent has a boiling point greater than 200 degrees C. The PVBC reactant polymer initially has a molecular weight of 55 kDa. The ionic conductivity of the membrane is greater than 48 mS/cm measured at 20 degrees C. The membrane has a swelling ratio of 25-57%. The membrane has a water up take value of 60-239%. The membrane has a normalized ion conductivity of 34.1-41.9 mS g/mmol cm. The degree of crosslinking of the membrane measured by 'H NMR is 10-50%. The membrane is not soluble in water, methanol, ethanol, isopropanol, N,N dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methyl-2-pyrrolidone at temperature of 20-85 degrees C.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of reaction film-type lubrication agent is 0.01-10 wt.% with respect to water-miscible solvent and water. The reaction film-type lubrication agent is a silane coupling agent.
TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The thieno-thiophene copolymer has number average molecular weight of 1000-2000000. Preferred Component: The thieno-thiophene copolymer further has repeating unit of formula (II) or (III).a=1-5;andb=1-30. Preferred Definitions:    m=1 or 2;    R1,R2=H;and    W'=O.
TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Component: The cathode is graphite, carbon felt or carbon cloth. The anode is graphite, carbon felt or carbon cloth.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The siliceous sand is molded using alkaline earth metal compound chosen from calcium compound, magnesium compound or their mixture, preferably calcium hydroxide, calcium carbonate, calcium oxide, calcium sulfate or their mixture. The ratio of alkaline earth metal atom with respect to silicon atom in sand is 0.001-0.04. The siliceous sand has silicon dioxide content of 97 wt.% or more. The granulated material has size of less than 1400 mu m. The amount of siliceous sand having particle size of less than 75 mu m and 150-1400 mu m is 25-70 wt.% and 10-50 wt.%, respectively. The ratio of alkali metal atom with respect to silicon atom in granulated material is less than 0.01. The alkaline earth metal compound is contacted with the surface of siliceous sand in the presence of water, heated at 100-1600 degrees C and granulated. The amount of alkaline earth metal compound with respect to 100 parts weight of siliceous sand is 0.1-5 parts weight. The silicon dioxide content of siliceous sand is 97 wt.% or more. The siliceous sand has average particle diameter of 1-200 mu m. The metallic silicon is manufactured by supplying granulated material to an arc furnace, and reductively reacting.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The photocatalyst is titanium dioxide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The structural material is obtained by impregnating slurry containing phenol resin and silicon powder having average particle diameter of 1-10 mu m in polyurethane material structure having spongy porous structure, carbonizing at 900-1350 degrees C, and carrying out reaction sintering of silicon at 1350 degrees C or more. The ultraviolet ray light guide is formed from ultraviolet light transmissive material having ultraviolet light transmittance of 70% or more at 300 nm, preferably ultraviolet light transmissive acrylic resin. The water purifier has a liquid feeding pump (400) for supplying to-be-purified wastewater to the filter. The water purifying system has liquid feeding unit (IV).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor is titanium dioxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The compound (I) is preferably chosen from formulae (VI), (VII) and (VIII).R8-R11,R14=H, halo, optionally substituted alkyl, alkenyl, alkynyl, alkoxy, alkylthio, amino, acyloxy, carbonyl, aryl, or heteroaryl;j8-j11=1-5;R12,R13=H, halo, optionally substituted alkyl, alkenyl, alkynyl, alkoxy, alkylthio, amino, carbonyl, aryl or heteroaryl;R15=H, halo, optionally substituted alkyl, alkenyl, alkynyl, alkoxy, alkylthio, amino, aryl or heteroaryl;k=0 or more;j12-j14=1-4;adjacent R8-R13=cyclic structure;andj15=1-8. Preferred Definitions:    X=carboxylic acid group.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Composition: The aromatic compound is of formula (V)-(VII). SPECIFIC COMPOUNDS - 144 Aromatic compounds are specifically claimed e.g. bis-biphenyl-4-yl-(7,7-dimethyl-7H-12-oxa-indeno(1,2-a)fluoren-9-yl)amine of formula (Ia), bis-biphenyl-4-yl-(7,7-dimethyl-7H-12-oxa-indeno(1,2-a)fluoren-1-yl)amine, bis-biphenyl-4-yl-(7,7-dimethyl-7H-12-thia-indeno(1,2-a)fluoren-1-yl)amine, bis-biphenyl-4-yl-(7,7-diphenyl-7H-12-oxa-indeno(1,2-a)fluoren-1-yl)amine and bis-biphenyl-4-yl-(7,7-diphenyl-7H-12-thia-indeno(1,2-a)fluoren-1-yl)amine.    EXAMPLE - 9-Chloro-7,7-dimethyl-7H-12-oxa-indeno(1,2-a)fluorene (in g) (5), N,N-di-1,1'-biphenyl-4-ylamine (5.04), sodium t-butoxide (4.52) and tri-tert-butylphosphine (0.1) were dissolved in toluene (200 ml), and bis(dibenzylideneacetone)palladium(0) (0.27) was added to mixture. The mixture was refluxed and agitated under nitrogen atmosphere for 12 hours. The reaction mixture was extracted with toluene and distilled water. The obtained organic layer was dried with anhydrous magnesium sulfate, filtered, and concentrated. The resulting product was purified through silica gel column chromatography using n-hexane/dichloromethane mixed in volume ratio of 2:1, to obtain bis-biphenyl-4-yl-(7,7-dimethyl-7H-12-oxa-indeno(1,2-a)fluoren-9-yl)amine (7.8), with yield of 82.3%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The oxidation-reduction reaction agent is chosen from chromium group compound, a manganese group compound, a copper group compound, an iron-type compound, a zinc group compound, a cobalt group compound, and nickel group compound. The front stage of the desulfurization catalyst is filled with the oxidation-reduction reaction agent. The oxidation-reduction reaction device and the desulfurizer are comprised integrally. The desulfurization catalyst is a copper-zinc-based catalyst.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The particles material has curved-surface-form portion, porous or compact substance network structure, and contains inorganic material. The conductor is chosen from silver, platinum, palladium, rhodium, ruthenium, cobalt, nickel, iron, copper, iridium and osmium. The semiconductor is chosen from zinc sulfide, cadmium sulfide, copper oxide and tin sulfide. The core surface includes deoxyribonucleic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The layered double hydroxide is at least one layered double hydroxide selected from a magnesium-aluminum double hydroxide, a nickel-aluminum double hydroxide, and a cobalt-aluminum double hydroxide. The air electrode catalyst is a complex oxide having at least one metal element selected from iron, cobalt, nickel, titanium, manganese and copper, and having at least one structure selected from a perovskite structure, a spinel structure and a pyrochlore structure. Preferred Parameter: A layer thickness of the electrolyte for air electrodes is 0.5-500 mu m, preferably 1-200 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The nanomaterial has outer diameter of 300-400 nm, and has uneven surface similar to grooves and turns of the brain. The surface has larger specific surface, where shell thickness is 30-40 nm. The shell is formed by assembling smaller nanoparticles. The particle size of nanoparticle is 5-20 nm. The soluble copper salt in step (A) comprises copper acetate or copper nitrate. The mol. ratio of copper salt to urea in step (B) is 1:5. Ultrasonic radiation time in step (D) is 2 hours. Water bath temperature of ultrasonic wave is 80 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step (ii), where the temperature of the substrate is 700 degrees C, the target-substrate distance is 7 cm, working pressure is 1 Pa and laser energy is 350 mJ/pulse.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The solar cell electric power generation module is made of single crystal silicon, polysilicon, amorphous silicon and copper indium selenide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The phosphonium surfactant is selected from trihexyl(tetradecyl)phosphonium bis(trifluoromethanesulfonyl)amide and trihexyl(tetradecyl)phosphonium bis(2,4,4-trimethylpentyl)phosphinate. The zinc-containing additive is zinc oxide. The glass frit comprises one or more components selected from bismuth oxide (Bi2O3), boric acid (B2O3), silicon dioxide (SiO2), phosphorus pentoxide (P2O5), cerium oxide (CeO2), and vanadium pentoxide (V2O5). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The aqueous solution contains amines selected from the group of ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, and penta ethylene hexamine.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Method: Delineating emitter and base regions with pulsed laser ablation utilizing flat top laser beam on thin crystalline silicon substrate is carried out via pulsed laser ablation of deposited borosilicate glass (BSG) layer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step of irradiating the base region with flat top laser beam to form doped base regions further comprises irradiating phosphorus-doped silicon oxide layer to form doped base regions.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The copper and indium composite structure further comprises gallium. The carrier gas comprises nitrogen gas. The substrate further comprises gallium material.    TECHNOLOGY FOCUS - METALLURGY - The copper and indium composite structure comprises copper and indium alloyed material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The thickness of amorphous coating is 100-1000 Nm. The droplets of metallic solvent has diameter of 100% or less.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The phosphazene compound is chain-shaped phosphazene of formula: P(-R)3=N-(P(-R)2=N)n-P(-R)2=O (I) and cyclic phosphazene of formula (II). The sulfonate is chain-shaped sulfonate or cyclic sulfonate of formula (III).X11,X12,X21-X27,Y11,Y12=halo or R-O-;R=alkyl or aryl;n=3-10;m=0-10;andZ=1-5C alkylene having sulfonyl group."N.B: X11,X12,X21-X27,Y11,Y12 are defined, but do not appear in the structure or group". The supporting electrolyte is lithium hexafluorophosphate, lithium tetrafluoroborate, lithium bis(trifluoromethyl sulfonyl)imide, lithium bis(pentafluoroethyl sulfonyl)imide or lithium bis(fluorosulfonyl)imide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The light conversion layer includes the p-type semiconductor material containing poly- 3-hexylthiophene. The light conversion layer has a bulk heterojunction structure.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preparation: No general method for preparation of isolated salt is given in the specification. Preferred Compound: The compound is isolated crystalline solid salt, (H2DABCO)(TiO(C2O4)2)2H2O. Preferred Method: In method (M1), the salt is heated at 350 degrees C. Preferred Components: The amorphous titania is free from detectable crystalline forms of titania as determined by powder X-ray diffraction techniques. The composite material has an average particle size of 25-35 mu M. The anode further comprises Li4Ti5O12, and/or additional carbon, blended with the composite material. The anode comprises lithium metal. The electrolyte comprises a lithium salt in a non-aqueous liquid medium. EXAMPLE - An ammonium hydroxide (NH4OH) was added to titanium isopropoxide (25 ml), producing a white gelatinous precipitate. The precipitate was washed three times to remove excess base and placed in de-ionized water (100 ml). About 0.23M solution of oxalic acid (200 ml) was added producing a clear solution of titanyl-oxalato anion, H2(TiO(C2O4)2). An approximately stoichiometric amount of an aqueous solution of 1,4-diazabicyclo(2.2.2)octane was added to the clear solution, thus isolated crystalline solid salt as a white crystalline solid was obtained.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The transparent oxide film layer is formed in the presence of an argon gas and/or oxygen. Preferred Component: The back electrode layer further includes aluminum zirconium oxide transparent conductive oxide film layer and metal silver conductive film in multi-stage membrane layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The acyl chlorinating agent is thionyl chloride, phosphorus trichloride, phosphorus oxychloride, phosphorus pentachloride or carbon tetrachloride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The sulfonated polybenzimidazole contains benzimidazole structure and sulfonic acid group heterocyclic polymer. The organic solvent is benzene, toluene, N,N-dimethyl formamide, N,N-dimethyl formamide, N,N-dimethyl acetamide, dimethyl sulfoxide, N-methyl pyrrolidone or mixture of compounds. The catalyst is N,N-dimethyl formamide, triethylamine, pyridine, pyridine, triethylamine, pyridine, pyridine or triethylbenzyl ammonium chloride. The precipitating agent is benzene, toluene, methanol, ethanol, ether, acetonitrile, deionized water or mixture of compounds.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The reaction gas inlet connecting body and the reaction gas outlet connecting body are made from quartz glass.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The halogen lamp group framework is made from aluminum alloy.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The chloroacetyl chloride crude product in the step (i) is product containing greater than 92% of chloroacetyl chloride content sold in the market. The drying agent in the step (v) is anhydrous calcium chloride. Preferred Method: The step (i), where weight ratio of the activated carbon to the chloroacetyl chloride crude product in the step (i) is 0.5-2:100. The step (ii), where weight ratio of the zinc particle to the chloroacetyl chloride crude product is 1-5:100. The step (iii), where weight ratio of glacial acetic acid to the chloroacetyl chloride clear liquid is 0.1-1:100. The container in the step (i) is a glass product. The rectifying device in the step (iii) is a glass product. The rectifying devices in the steps (iv) and (v) are quartz products.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The oxide substrate of the bismuth layered perovskite-like structure is chosen from 44 e.g. carbon-bismuth niobate, strontium-bismuth niobate, barium-bismuth niobate, palladium-bismuth niobate, calcium-bismuth-tantalum oxide composite (CaBi2Ta2O9). The absolute ethyl alcohol or deionized water is used in manufacture of piezoelectric material. The mass ratio of absolute ethyl alcohol or deionized water and the raw material mixture is 1-3:1.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The silicon hydride (SiH) is injected in deposition chamber to form embo layer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The (x/y) ratio is more than one to provide a fuel additive with unreacted sugars, which, when ignited, produces a modulated flame. The (x/y) ratio is less than one to provide a fuel additive with unreacted hydrogen peroxide, which, when ignited, produces flash ignition. The (x/y) ratio is approximately one to provide a fuel additive with reacted hydrogen peroxide and sugars. The fruit juice has 15-20% of sugar content. The hydrogen peroxide solution is mixed with the iron(II) green catalyst and sufficient sulfuric acid to form a yellow/brown iron(III) reactant solution, which is then added to the fruit juice for reaction. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The decoupling layer is etched using reactive plasma (preferably oxygen, carbon tetrafluoride, and/or hydrogen).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The epoxy compound or epoxy resin other than the compound (I) is contained in the composition.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The anti-reflection layer is made of silicon nitride, silicon oxide and intrinsic amorphous silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The buffer layer is made of cadmium sulfide, zinc sulfide, indium sulfide, zinc oxide and magnesium oxide. The transparent conductive layer is made of zinc oxide.    TECHNOLOGY FOCUS - METALLURGY - The target is made of copper, gallium and indium. A back electrode layer is made of molybdenum, tungsten, titanium and tantalum.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The concentration of diborane is 1 volume%.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - The ceramic material comprises mixture of metal oxides (preferably oxide of at least one of silicon, zinc, zirconium, aluminum, titanium, ruthenium, tin, cerium, lead, strontium, sodium, calcium, bismuth, boron, lithium or phosphorus).    TECHNOLOGY FOCUS - METALLURGY - The metal is selected from silver, copper, gold, palladium, platinum, nickel, cobalt, zinc, molybdenum, tungsten, ruthenium, titanium, and/or their alloys.    TECHNOLOGY FOCUS - POLYMERS - The UV-curable material is selected from acrylates, methacrylates, vinyl ethers or epoxy resins. The polymer forming cap is intrinsically conductive polymer, a sulfonated perfluorohydrocarbon polymer, polystyrene, polystyrene/methacrylate, sodium bis(2-ethylhexyl) sulfosuccinate, tetra-n-octyl-ammonium bromide or an alkane thiolate.
TECHNOLOGY FOCUS - METALLURGY - The back electrode is aluminum, silver, gold, nickel, copper/nickel or titanium/palladium/silver electrode.
TECHNOLOGY FOCUS - METALLURGY - The back electrode is aluminum, silver, gold, nickel, copper/nickel, aluminum/nickel or titanium/palladium/silver electrode.
TECHNOLOGY FOCUS - METALLURGY - The conductive layers are of aluminum, copper, tin, nickel, gold and silver.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The multi-coated lens is formed of at least three layers of different coatings, where the coatings are respectively formed of a material selected from aluminum oxide (Al2O3), aluminum fluoride (AlF3), bismuth oxide (Bi2O3), cerium fluoride (CeF3), chromium-contained coating, hafnium fluoride (HfF4), hafnium oxide (HfO2), magnesium fluoride (MgF2), scandium oxide (Sc2O3), silicon monoxide (SiO), silicon dioxide (SiO2), tantalum pentoxide (Ta2O5), titanium dioxide (TiO2), yttrium oxide (Y2O3), zinc sulfide (ZnS) and zirconium dioxide (ZrO2).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The photocatalyst particles are titanium oxide particles. The inorganic oxide particles are silica particles. The photocatalyst particles have a number average particle diameter of 10-100 nm and a population average particle diameter of greater than 5 nm and 100 nm or less, as computed by measuring the length of 100 arbitrary particles into a visual field of 200000 times using a scanning electron microscope.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The silicone emulsion has a glass transition point of greater than 60 degrees C. The solid content of photocatalyst coating liquid is 1-10 %mass.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic layer contains oxide, nitride, carbide, oxynitride, or oxycarbide of metal(s) chosen from silicon, aluminum, indium, tin, zinc, titanium, copper, cerium and tantalum. Preferred Condition: The oxygen concentration during ultraviolet irradiation is 35 ppm or less, preferably 20 ppm or less. The ultraviolet irradiation amount is 50-200 mJ/cm2 or 1-25 mW/cm2, and the irradiation time is 1-12 seconds.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The polymeric compound having phosphate ester group is (meth)acrylate. The polymeric composition further contains another (meth)acrylate other than the polymeric compound having phosphate ester group. Preferred Property: The thickness of the organic layer is 0.3-10 mu m.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The total amount of the polymeric compound having phosphate ester group in the polymeric composition, is 0.01-50 wt.%. The polymer compound having phosphate ester group is of formula: Ac1-O-X1-O-P(=O)(-O-Z2)-O-Z1.Z1=H, Ac2-O-X2-, or substituent not having polymeric group;Z2=H, Ac3-O-X3-or substituent not having polymeric group;Ac1,Ac2,Ac3=(meth)acryloyl;andX1,X2,X3=alkylene, alkyleneoxy, alkyleneoxy carbonyl or alkylene carbonyloxy.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The aldehyde compound is cinnamaldehyde derivative chosen from cinnamaldehyde, ( alpha )-methyl cinnamaldehyde, ( alpha )-pentyl cinnamaldehyde, ( alpha )-hexyl cinnamaldehyde, p-isopropyl ( alpha )-methyl hydrocinnamaldehyde and p-tert-butyl-( alpha )-methyl hydrocinnamaldehyde.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic layer is an emissive layer. Preferred Definitions:    R1-R3=H or 1-15C alkyl.    EXAMPLE - A round-bottomed flask (100 ml) was charged with (1,2,4)triazolo(4,3-a)quinoline (ligand A, 827 mg), benzylpyridine dichloro bridge dimmer (500 mg), sodium carbonate (470 mg) and 2-ethoxyethanol (100 ml). The reaction was stirred and heated at 135 degrees C for 3 hours under nitrogen while protected from light with aluminum foil. The reaction mixture was cooled to ambient temperature and concentrated under reduced pressure (20 mm Hg). A light brown solution was obtained and further purified by flash column chromatography on silica gel using dichloromethane to give iridium complex (510 mg, 78%).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor which forms the semiconductor layer is titanium oxide. Preferred Definitions:    group of formula (a)=group of formula (b);    R3,R4=H, halo, hydroxy, thiol, cyano, alkenyl, alkynyl, alkoxy, amino, heterocyclic group, optionally substituted alkyl or aryl;    orR3+R4=cyclic structure;    n=0 or more;    Y'=sulfur, oxygen, or selenium atom, preferably sulfur;    R1=H;and    M=metal atom or metal ion chosen from ruthenium, osmium, copper or iron.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The semiconductor layer contains titanium oxide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The cyclobutene-type compound (I) is preferably of formula (II) or (III). The semiconductor which forms semiconductor layer is titanium oxide.R3,R4=H, optionally substituted alkyl alkenyl, alkynyl, alkyl carbonyl, alkoxy carbonyl, aryl or heterocyclyl;X,Y'=C,N,S or O;R5-R8=H, halo, nitro, cyano, hydroxy, thiol, optionally substituted alkyl, alkenyl, alkynyl, alkyl carbonyl, alkoxy carbonyl, alkoxy, alkyl thio, amino, aryl or heterocyclyl;R9,R10=R5 excluding H or alkyl keto;n=0-4;R9+adjacent two C,R10+adjacent two C=optionally substituted aromatic ring;n=0-4;andR11-R14=H, optionally substituted alkyl, alkenyl, alkynyl, aryl or heterocyclyl, in which at least one of R11-R14 is group (i).(i) At least one of R3-R10 is group (i); (ii) When X and Y' are N, then R6 or R8 does not exist; and (iii) When X and Y' are S or O, then R5-R8 do not exist. Preferred Definitions:    m=0-4;    at least one of L1-L3=group of formula (ii);    R15,R16=H, halo, hydroxy, thiol, cyano, optionally substituted alkyl, aryl, alkenyl, alkynyl, alkoxy, amino or heterocyclyl;    R15+R16=ring;    Y'=S;and    R1=H.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The photoelectric conversion layer contains titanium oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The carbonyl group-containing compound (I) is of formula (X)-(XII).R6,R7=H, halo, hydroxy, thiol, cyano, optionally substituted alkyl, aryl, alkenyl, alkynyl, alkoxy, amino or heterocyclic group;n=0 or more;Y'=sulfur, oxygen or selenium;R600,R700=H, halo, hydroxy, thiol, cyano, optionally substituted alkyl, aryl, alkenyl, alkynyl, alkoxy, amino or heterocyclic group;n=0 or more;or R600+R700=cyclic structure;R8-R10=halo, optionally substituted alkyl, alkenyl, alkoxy, alkynyl, thioalkoxy, seleno alkyl, aryl or heterocyclic group;n10=1-8;andn8,n9=1-5.The carbonyl group-containing compound (XI) is cis-isomer or trans-isomer. The carbonyl group-containing compound (XII) is cis-isomer or trans-isomer. Preferred Definitions:    at least one R1 and R2=group of formula (i);and    R4=H.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The electroconductive element or its alloy covers at least one portion of the surface within the void, or is filled within the portion of the void. The porous silicon particles contain silicide of arsenic, barium, carbon, calcium, cerium, cobalt, chromium, copper, erbium, iron, gadolinium, hafnium, lutetium, magnesium, manganese, molybdenum, niobium, neodymium, nickel, phosphorus, palladium, promethium, platinum, plutonium, rhenium, rhodium, ruthenium, scandium, samarium, tantalum, terbium, thorium, titanium, thulium, uranium, vanadium, tungsten, yttrium, ytterbium, and/or zirconium. The porous silicon particle has average particle diameter of 0.1-1000 mu m, average porosity of 15-93%, and average void diameter of 5 nm to 2 mu m. The ratio of average particle diameter and average void diameter of porous silicon particle is 5 or more. Electroless plating of electroconductive element is carried out in at least one portion within the void, and electroconductive element is deposited. The porous silicon particle contain 1 atomic% or more of base elements whose deposition potential is more than electroconductive element. Substituted plating which substitutes base element by the electroconductive element is performed. The porous silicon particle is placed on a filter. Electroless plating or substituted plating is performed at flow field of 0.1 cm/second or more. The porous silicon particle is heated at 600 degrees C or more with temperature increase rate of more than 100K/min in an atmosphere containing hydrocarbon-type gas (10 volume% or more). Carbon is deposited by thermally decomposing the hydrocarbon-type gas within the void in at least one portion within the void of the porous silicon particle.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The electrode further comprises a current collector (222), where the current collector is embedded within the electrode. The at least a portion of the reactive metal particles has a diameter of less than 100 nm, preferably less than 50 nm. The at least a portion of many reactive metal particles comprises particles having a diameter of less than 10 nm. The at least a portion of the reactive metal particles comprises particles having an oxide shell. The at least one face of the electrode has enhanced geometric surface area by adding contours. The at least some of the surface area is contoured during volumetric compression. The electrode is: sintered (220) and the sintering temperature is 100-900 degrees C, preferably 400-700 degrees C; a gas or liquid diffusion electrode; and has first and second electrodes which can be configured to permit flow of electricity.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The at least a portion of the metal substrate particles is groups 3-16 metals, lanthanides and/or their alloys. EXAMPLE - Nickel powder (15 nm) (0.15 g) and micron-nickel powder (0.5 micron)(1.35 g) were blended in vial to obtain resulting mixture. The resulting mixture was poured into a die containing one quarter circle of expanded nickel metal. The die was then volumetrically compressed to 1500 psi and held for 30 seconds to obtain electrode. The resulting electrode was removed from the die and placed in a furnace at 500 degrees C for 1 hour.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The compound (I) is preferably of formula (II).p=2-4.The organic electroluminescent element further has light emitting layer (5), positive hole transport layer (4) or electron blocking layer. The light emitting layer further contains phosphorescence dopant.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Definitions:    X=oxygen or sulfur.    SPECIFIC COMPOUNDS - 84 Chalcogen-containing aromatic compounds are disclosed e.g. 4,14-diphenyl-8,10-dioxatetracyclo(7.7.0.02,7.011,16)hexadeca-1(9),2(7),3,5,11(16),12,14-heptaene of formula (Ia), 9-(3-(14-(3-(9H-carbazol-9-yl)phenyl)-8,10-dioxatetracyclo(7.7.0.02,7.011,16)hexadeca-1(9),2(7),3,5,11(16),12,14-heptaen-4-yl)phenyl)-9H-carbazole, 9-(14-(9H-carbazol-9-yl)-8,10-dioxatetracyclo(7.7.0.02,7.011,16)hexadeca-1(9),2(7),3,5,11(16),12,14-heptaen-4-yl)-9H-carbazole, 4,14-bis((8-thiatricyclo(7.4.0.02,7)trideca-1(9),2(7),3,5,10,12-hexaen-6-yl))-8,10-dioxatetracyclo(7.7.0.02,7.011,16)hexadeca-1(9),2(7),3,5,11(16),12,14-heptaene and 5,13-bis((5-(5-(thiophen-2-yl)thiophen-2-yl)thiophen-2-yl))-8,10-dioxatetracyclo(7.7.0.02,7.011,16)hexadeca-1(9),2(7),3,5,11(16),12,14-heptaene.    EXAMPLE - 2,9-Dibromo-benzo(b)benzo(4,5)furo( 3,2-d)furan (in g) (5), phenylboronic acid (10), tetrakis(triphenylphosphine)palladium (0) (1), toluene (200 ml), and ethanol (100 ml) were stirred. Aqueous sodium carbonate solution was added to the obtained solution and stirred at 100 degrees C for 5 hours. The obtained reaction solution was cooled to room temperature. The organic layer was washed using distilled water (100 ml), dried using anhydrous magnesium sulfate, magnesium sulfate was filter-separated and solvent was depressurizingly distilled off. The obtained product was purified, to obtain 4,14-diphenyl-8,10-dioxatetracyclo(7.7.0.02,7.011,16)hexadeca-1(9),2(7),3,5,11(16),12,14-heptaene in yield of 81%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The surfactant is chelating agent. The chelating agent is hydroxyethylidene diphosphate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic acid is sulfuric acid, hydrochloric acid or nitric acid. The alkaline solution is a saturated solution of potassium hydroxide, sodium hydroxide or lithium hydroxide. The metal salt is chloride, sulfate or nitrate of antimony, indium or copper. The conductive salt is sodium salt, potassium salt and/or lithium salt.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of metal salt, conductive salt, organic acid, and inorganic acid in the solution used for forming semiconductor film, is 0.1-0.5 mol/L, 1-4 mol/L, 0.5-3 mol/L and 0.01-0.1 mol/L, respectively. The organic acid is sulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, methanesulfonic acid, hexanesulfonic acid, heptanesulfonic acid, amino acid, citric acid, tartaric acid or glycin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent is chosen from tetrahydrofuran, dioxane, glycol dimethyl ether, benzene and methylbenzene. The catalyst is mixture of organic palladium catalyst, organic phosphine ligand or organic palladium catalyst. The organic palladium catalyst is dibenzylideneacetone-dipalladium/tri(o-tolyl)phosphine, tetrakis (triphenylphosphine) palladium or bis(triphenylphosphine)palladiumchloride. Preferred Process: The perylene tetracarboxylic imidodicarbonic diamide copolymer preparing method further involves adding a mixture of organic palladium catalyst, organic phosphine ligand or organic palladium catalyst in organic solvent, reacting for 24-72 hours at 70-100 degrees C under protection of inert gases, adding reaction solution to alcohols compounds for precipitation, filtering and washing precipitates, drying the obtained precipitates, dissolving precipitates with methylbenzene, adding precipitates to water solution of sodium diethyldithio carbamate, heating to 80-100 degrees C, stirring and reacting for 8-14 hours, separating organic phase in the reaction solution by column chromatography, decomposing and removing the organic solvent, precipitating organic solvent with methyl alcohol, obtaining the precipitates, filtering the precipitates, performing Soxhlet extraction to obtained solids with acetone for 2-4 days, precipitating with alcohols compounds, filtering and obtaining a product.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The first gas and second gas are selected from noble gas and nitrogen.
TECHNOLOGY FOCUS - METALLURGY - The mixed catalyst is a set of metal particles, which is selected from white gold and platinum-rhodium.
TECHNOLOGY FOCUS - METALLURGY - The atoms or molecules contains elements selected from group consisting of boron, aluminum, phosphorus and arsenic.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The non-glassy bonding layer is made of silicon-oxide, silicon-nitride, and silicon-oxi-nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The buffer layer comprises gallium arsenic phosphorus (Ga As (x) P (1-x)), gallium indium phosphorus (Ga (1-y) In (y) P), and/or aluminum arsenic phosphorus (Al As (z) P (1-z)), where x is 0-1, y is 0-1 and z is 0-1.The first junction comprises gallium arsenic. The second junction comprises gallium indium phosphorus.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The glass frit comprises 60-92 weight percentage of lead oxide, 10-30 weight percentage of silicon dioxide, 0.1-2.0 weight percentage of aluminum oxide, 0.1-2.0 weight percentage of zirconium oxide, 0.01-20 weight percentage of potassium oxide, 0.01-10 weight percentage of sodium oxide, 0.05-5 weight percentage of lithium oxide, 20-80 weight percentage of bismuth oxide, 0.01-20 weight percentage of barium oxide and 0.1-25 weight percentage of titanium oxide based on total weight of the glass frit. The passivation layer comprises a silicon nitride layer. The inorganic components comprise 2-8 weight percentage of zinc oxide.    TECHNOLOGY FOCUS - METALLURGY - The glass frit is made of lead compound or bismuth compound. The inorganic components comprise metal/metal oxide powder selected from a group consisting of zinc, titanium, manganese, tin, copper, molybdenum and indium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The buffer layer is made of cadmium aluminum sulfide, cadmium sulfide and aluminum oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The hydrogen bromide gas and oxygen gas are reacted with the surface of substrate, during formation of seed points. The hydrogen bromide gas is provided with a high selectivity of silicon to silicon oxide. The growing masks are provided with growing silicon oxybromide particles.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Layer: The electroconductive layer consists of orientated polycrystal thin film having specified surface on the surface. The face distance of conductive layer in film thickness direction is less than the face distance of bulk crystal. Preferred Process: At least one portion of the electroconductive layer is oxidized or nitrided. Preferred Composition: The transition metal element is molybdenum. The group Ib element is copper. The group IIIb element is aluminum, gallium and/or indium. The group VIb element is selenium. The transition-metal dichalcogenide thin film is molybdenum selenide (MoSe2) thin film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Silica gel isolation film layer has volume pore space of 5-20% and thickness of film layer is 10-25 nm. Transparent conductive oxide film layer comprises tin oxide composite zinc oxide or fluorine-doped tin oxide (F:SnO2), and thickness of film is 75-400 nm.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Q1-L1 part of compound is represented by formula (1), formula (2), formula (3), or formula (4).Y01=O, S, or N-R01;X01, X02=L1, aryl group, or heteroaryl group;R01=L1 or aryl group;X21-X28=L1, H, or substituent;A1-A-8=C or N;Y31=MR31R32, O, S, or N-R33;M=C, Si, Ge, Ti, or Sn;X31-X38=H or substituent;R31, R32=alkyl group or aryl group;R33=alkyl group, aryl group, or heteroaryl group;X41-X45=L1; andn01=0 or 1. Preferred Definitions:    Q2=fluoranthene, pyrene, chrysene, triphenylene, perylene, or coronene; and    A1-A4, A5-A8=conjugated bond.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The conductive ink further comprises at least one or more surfactant, a conductive polymer, and alcohol. The conductive ink has a viscosity of 0.01-10000 Pa's and at a shear rate of 0.01-1000 revolutions per minute. Preferred Components: In the ionic liquid, a cation portion interacts with n electrons of the carbon nanotubes. The solvent is an organic solvent and/or water. The organic solvent comprises at least one of an amine group, an amide group, a sulfone group, a carboxyl group, and a hydroxyl group in its side chain. The concentration of the carbon nanotubes is 10 g/l or lower. In the conductive ink, a volume ratio of the ionic liquid to the solvent is 0.01-30. In the conductive ink, a thixotropy index value is 1-10 in terms of a ratio of viscosity at a shear rate of 0.5-5 revolutions per minute. EXAMPLE - Carbon nanotubes (1 g) was added to 100 ml of a mixed solvent including water and isopropyl alcohol in mixing ratio of 1:1 filled in a glass bottle. The glass bottle containing the carbon nanotubes was homogenized for 10 minutes to form carbon nanotube dispersion. The dispersion was centrifuged at ambient temperature to form supernatant liquid (90 ml). A 1-ethyl-3-methylimidazolium tetrafluoroborate (90 ml) was added to the dispersion remaining after recovery of the supernatant, and the resultant was stirred for 3 hours and worked up to give ink.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The covering layer is formed from amorphous or microcrystalline silicon, silicon nitride and/or silicon oxynitride. The contact layer section of the covering layer contains amorphous or microcrystalline silicon. The rear side passivation layer is formed from aluminum oxide, amorphous silicon, amorphous silicon nitride or amorphous silicon oxide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The ligand of zirconium complex is of formula: -C(=O)-CH2-C(=O)-Y'. The ligand of zirconium complex has a structure of formula (I). The zirconium salt and/or zirconium complex are zirconium 2'-hydroxy-4',5'-dimethoxyacetophenone complex and/or zirconium isovaleryl acetone complex. The curable resin composition further contains an acid anhydride. The polyhydric carboxylic acid is a compound obtained by reacting 5C or more polyhydric alcohol having a functionality of 2-6, and saturated aliphatic cyclic anhydride, preferably a compound obtained by reacting 5C or more polyhydric alcohol having a functionality of 2-6 or siloxane structure, and methylhexahydrophthalic anhydride or cyclohexane-1,3,4-tricarboxylic acid-3,4-anhydride. The polyhydric carboxylic acid has branched chain structure or cyclic structure. The cycloaliphatic epoxy resin is 3,4-epoxycyclohexylmethyl-3',4'-epoxycyclohexyl carboxylate or cyclohexane-1,4-dicarboxylic acid bis-(7-oxa-bicyclo(4.1.0)hept-3-ylmethyl) ester. The curable resin composition further contains a hindered amine light stabilizer and an antioxidant.Y'=1-6C alkyl or 1-3C alkoxy;Z=1-3C alkyl or 1-3C alkoxy;andm,n=1-3.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The water-containing cutting fluid has surface tension of 55 mN/m or less. Preferred Definitions:    R=2-6C alkyl;and    m/(m+n)=0.5-1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The vapor deposition material has density of 0.9-1.5 g/cm3. The purity of magnesium oxide powder is 99.9% or more. Preferred Composition: The content of metallic silicon powder is 5-30 wt.% with respect to sum total of metallic silicon and silicon dioxide. The molar ratio of magnesium oxide and silicon in metallic silicon is 0.1-2. The concentration of calcium contained in vapor deposition material is 100 ppm or less. The concentration of calcium contained in magnesium oxide powder is 1000 ppm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compound: The inorganic ultraviolet absorber has particle surface treated with inorganic substance, and is preferably titanium oxide or zinc oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The desulfurization material is zinc oxide and cerium oxide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: A sulfonic-acid curing catalyst is aromatic sulfonic acid. The content of sulfonic-acid curing catalyst is 8-40 parts weight with respect to 100 parts weight of melamine resin derivative. The electroconductive-improving agent is a compound having amide group, sulfo group, and/or hydroxyl group. The thermosetting-type electroconductive coating composition further contains water-soluble antioxidant. The water-soluble antioxidant is ascorbic acid or erythorbic acid, wettability-improving agent or antifoamer. The antifoamer is a silicone emulsion. Preferred Property: The thickness of the electroconductive film is 45 nm or less.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The conductive polymer is a composite component of poly (3,4-dialkoxythiophene) or poly(3,4-alkylene dioxythiophene) having repeating structure of formula (I) and a dopant. The content of melamine resin derivative is 150-750 parts weight with respect to 100 parts weight of conductive polymer. The content of silicone with both ends modified by polyether is 10-60 parts weight with respect to 100 parts weight of melamine resin derivative.R1,R2=1-4C alkyl, 1-4C alkylene or H.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The doped and modified nano TiO2 is obtained by:(A) dissolving 0.1-0.5 pts.wt. monomer, oxide or nitrate of phosphorus, boron, europium, copper, iron, chromium, zinc, germanium, strontium, selenium, ruthenium, palladium, cadmium, indium, tin, antimony, tellurium, nitrogen, aluminum, sulfur, barium, vanadium, platinum, gold, bismuth, cerium, praseodymium, neodymium or dysprosium in distilled water (100 pts.wt.) with pH value of 2-7, and stirring the solution for 1-12 hours at room temperature;(B) adding titanium tetrachloride (1-10 pts.wt.) into the solution;(C) adding 2-30 pts.wt. urea into the solution and continuously stirring for 1-3 hours to obtain emulsion;(D) transferring the emulsion in polymerized tetrafluoride lining reaction kettle, controlling temperature to 150-180 degrees C for 1-2 hours, then performing solid and liquid separation, washing, and drying to obtain precursor powder after doping and modifying; and(E) placing the precursor powder in a forging furnace, and forging for 0.5-4 hours at 400-600 degrees C.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Method: The mixed gas before preprocessing is carried out, is adjusted such that oxygen mole concentration in the mixed gas is more than one half of the total of carbon monoxide mole concentration and hydrogen mole concentration. The PSA adsorption agent contains a carbon molecular sieve. The TSA adsorption tower is equipped with adsorption tube in which the interior is filled with the TSA adsorption agent. The TSA adsorption agent is cooled by flowing through a liquid refrigerant in the TSA adsorption tower. The TSA adsorption agent is heated by flowing through a liquid heat medium in the TSA adsorption tower. The adsorption temperature in the TSA adsorption process is -50 degrees C to -10 degrees C. Preferred Apparatus: The TSA adsorption tower has a primary gas passing mouth and a secondary gas passing mouth, adsorption pipes connected with gas passing mouth, and which are filled with TSA adsorption agent. The temperature variation adsorption type gas-separation apparatus has a refrigerant storage tank for holding liquid refrigerant supplied to the TSA adsorption tower in order to cool TSA adsorption agent in the adsorption pipe, a heat-medium storage tank for holding the liquid heat medium supplied to the TSA adsorption tower in order to heat the TSA adsorption agent in the adsorption pipe, a primary refrigerant line for supplying the refrigerant to the TSA adsorption tower from the refrigerant storage tank, a secondary refrigerant line for returning the refrigerant to the refrigerant storage tank from the TSA adsorption tower, a primary heat-medium line for supplying the heat medium to the TSA adsorption tower from the heat-medium storage tank, a secondary heat-medium line for returning the heat medium to the heat-medium storage tank from the TSA adsorption tower.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Properties: The organic photosensitizer molecules and organic light emitting molecules have cationic ( pi )-interaction. The light conversion element has viscosity of 1 Pa.second or less at 300 K and melting point and solidification temperature of 0 degrees C or less. Preferred Composition: The anion in the ionic liquid is bis(trifluoromethylsulfonyl)imide, tris(trifluoromethylsulfonyl)carbide, hexafluorophosphate, tris(pentafluoroethyl)trifluorophosphate, or anion of formula: (BR1R2R3R4)-.R1-R4=CH3(CH2)n or aryl;andn=1-9.The cation in the ionic liquid is imidazolium ion, pyridinium ion, piperidinium ion, pyrrolidinium ion, pyrazolium ion, thiazolium ion, quaternary ammonium ion, quaternary phosphonium ion or sulfonium cation. Preferred Process: The stirring is performed by irradiating ultrasonic waves, bubbling, using stirrer, liquid sending pump, grinder, bead mill, homogenizer, wet jet mill and/or microwave irradiation.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Semiconductor which forms semiconductor layer is titanium oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Formula (Za) is represented by formula (Zb).R3, R4=H, halo, OH, thiol group, CN, optionally substituted alkyl group, aryl group, alkenyl group, alkynyl group, alkoxy group, NH2, or heterocyclic group;R3+R4=cyclic structure;n= greater than or equal to 0;Y=S, O, or Se; andX=acidic group. Preferred Definitions:    Y=S; and    R1=H.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The conductive substrate comprises foam graphite and glass carbon fiber.    TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Components: The conductive substrate comprises carbon cloth, carbon paper, carbon felt, graphite felt and active carbon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The molar ratio of copper sulfate and potassium iodide is 0.01-0.05 mol/l and 0.01-0.05 mol/l, respectively.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The amount of ethylenediaminetetraacetic acid is 0.01-0.05 mol/l.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The precursor of active component is metal nitrate, sulfate, chloride and/or acetate. The strong reducing agent is sodium borohydride, potassium borohydride, hydrazine (callose) and/or thiourea dioxide.    TECHNOLOGY FOCUS - METALLURGY - Preferred Components: The metal is iron, cobalt, nickel, copper, molybdenum, titanium, tungsten, gold, ruthenium and/or iridium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The carrier is active carbon, carbon black, acetylene black, graphite carbon, carbon nano-tube, carbon nano fiber and/or conductive polymer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The filler is chosen from active carbon, graphite or carbon felt.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The metal net is chosen from titanium wire net or stainless steel net.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The molar ratio of niobium atom with respect to titanium atom, during manufacture of transparent conductive film is 0.005-0.4. The oxygen concentration and water vapor concentration in the atmosphere in which film containing niobium-doped titanium oxide is formed, are 0 volume%, respectively.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: An alcohol having boiling point of 160 degrees C or less, is further sprayed on the glass substrate. The organic niobium compound is niobium pentaethoxide. The organotitanium compound is titanium tetra-isopropoxide.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The crystallizable solder glass contains (in wt.%) barium oxide and/or boron trioxide, magnesium oxide (less than 5), calcium oxide (less than 15), zinc oxide (less than 15), beryllium oxide (less than 15), gallium (III) oxide (less than 15), indium trioxide (less than 15), yttrium trioxide (less than 15), lanthanum oxide (less than 15), dysprosium oxide (less than 15), titania (less than 15), zinc-tin oxide (less than 15) and hafnium oxide (less than 15), and comprises amorphous glass, or partly-crystallized glass ceramic or ceramic. The crystalline phase of crystallizable solder glass contains strontium-silicon oxide (SrSi2O5, SrSiO3, Sr2SiO4, Sr2Si3O8 or Sr2MgSi2O7).
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The additional element comprises titanium (4-25 mass ppm) and sulfur (3-12 mass ppm).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The solvent or dispersion medium is a methanol, ethanol, isopropanol, tetra hydraulic furfuryl alcohol, tert butanol, butyl acetate, methoxyethanol and 1-Methoxy-2-Propanol or toluene. The indium halogen alkoxide consists of bromine, aluminum, gallium, germanium, tin, lead, phosphorus, hydrogen fluoride, zinc and antimony.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The dispersed radiation curing dispersion solution contains methyl methacrylate, polystyrene phosphonate, methyl methacrylate-modified unsaturated polyester polymer and/or modified fluorinated silicone polymer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The rare-earth oxide is oxide of lanthanum, praseodymium, neodymium, samarium and gadolinium. The pores have a rectangular cross-section. The adsorber comprises cordierite base.
TECHNOLOGY FOCUS - POLYMERS - Preferred: The water-soluble vinyl polymer is polyvinyl alcohol, polyvinyl pyrrolidone, and/or acrylic acid polymer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: Hardenable functional groups are hydroxyl group, carboxyl group, amino group, glycidyl group, silyl group, silanate group, and/or isocyanate group.    TECHNOLOGY FOCUS - POLYMERS - Preferred Layer: The metal-clad laminated sheet further has secondary resin layer formed on primary resin layer. The secondary resin layer consists of polyimide. Preferred Process: The manufacture of metal-clad laminated sheet further involves coating the composition containing fluorine-containing polymer having hardenable functional group and epoxy resin in metal foil, and forming primary resin layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The molarity ratio of oxoacid and hydrogen fluoride is 1:0.00005-1:0.05. The molarity ratio of hydrogen fluoride and nitric acid and/or hydrogen peroxide is 1:0.095-1:4. The oxoacid is iodic acid, periodic acid, bromic acid and/or their salt, preferably iodic acid or periodic acid. Preferred Component: The silicon wafer is polycrystal silicon wafer.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass frit contains lead oxide (52-88), silica (0.5-15), alumina (0.5-10), zinc oxide (0-22), tantalum oxide (0-8), zirconia (0-10), phosphorus pentoxide (0-8), lithium oxide, potassium oxide and sodium oxide (0-15), boron trioxide (0-12), ferric oxide, cobalt trioxide, cuprous oxide and manganese oxide (0-25). The glass frit is cadmium free and lead free.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal additive comprises organo-metal compound(s) selected from vanadium acetylacetonate, vanadyl acetylacetonate, antimony acetylacetonate, yttrium acetylacetonate, metal 2-methylhexanoate, metal 2-ethylhexanoate, or metal 2-propylhexanoate, where the metal is vanadium, antimony, phosphorus or yttrium. The paste composition further contains cobalt, nickel, zirconium, tin, zinc or lithium organo-metal compound.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The aluminum-gallium-indium nitride light emitting diode has increased oscillation strength and indium incorporation rate.
TECHNOLOGY FOCUS - METALLURGY - The seed layer is selected from a group consisting of copper, aluminum, tungsten, nickel and cobalt.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: Purity of diethyl zinc is 99.995%. Metal organic chemical gas phase deposition method is carried out at substrate temperature of 125-180 degrees C, and the pressure of plating film reaction gas of 130 Pa.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal layers are formed by coating nickel solution formed by dissolving nickel in acidic solution which is nitric acid or hydrochloric acid solution.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The substrate is made of silicon wafer or chip. The electrically conductive material is made of aluminum, chromium, copper, gold, iron, lead, molybdenum, nickel, silver, tantalum, tin, titanium, palladium, platinum and vanadium.    TECHNOLOGY FOCUS - METALLURGY - The electrically conductive material is made of aluminum, chromium, copper, gold, iron, lead, molybdenum, nickel, silver, tantalum, tin, titanium, palladium, platinum and vanadium.
TECHNOLOGY FOCUS - METALLURGY - Preferred Method: The atomic layer deposition (ALD) of aluminum oxide passivation layer is less than 2 nm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The ALD method uses trimethyl aluminum and water as precursor source.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The dielectric layer is made of silicon dioxide, silicon nitride, silicon oxynitride, alumina, zirconia, titania, tantalum pentoxide, zinc oxide and hafnium oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The coating material comprises a semiconductor-hydrogen compound such as silane and/or germanium. The inert gas is argon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - A glass bonding layer is provided to comprise a borophosphosilicate glass (BPSG). A non-glassy bonding layer is made of silicon dioxide (SiO2), silicon nitride (Si3N4) and silicon oxynitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The catalyst contains compound of iron, cobalt, or nickel. The compound of iron is oxide or hydroxide of iron. The catalyst contains powder material. The support of catalyst containing magnesium oxide and/or aluminum oxide is further added during manufacture of carbon nanofiber. The reducing gas used during manufacture of carbon nanofiber is hydrogen. The carbon black is acetylene black.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass substrate contains silicon dioxide (58-69), alumina (7-12), boron trioxide (0-0.5), magnesium oxide (4-9), calcium oxide (0-4.5), strontium oxide (0-1.5), barium oxide (0-1.5), zirconium oxide (0-1.5), titanium dioxide (0-1.5), sodium oxide (6.5-10.5), and potassium oxide (2-8). The total amount of magnesium oxide, calcium oxide, strontium oxide and barium oxide is 9-15 mol%. The total amount of sodium oxide and potassium oxide is 10.5-15 mol%. The molar ratio of magnesium oxide and alumina is 0.2-0.85. The ratio of total amount of sodium oxide, potassium oxide, strontium oxide and barium oxide with respect to total amount of alumina and zirconia is 1-2.2. The product of molar ratio of total amount of sodium oxide and potassium oxide with respect to amount of alumina, and molar ratio of sodium oxide and potassium oxide is 0.9-10. The glass substrate has glass transition temperature of 650-750 degrees C and average coefficient of thermal expansion of 75x 10-7-90x 10-7/ degrees C at 50-350 degrees C. The difference of temperature of glass substrate at which viscosity is 104 dPa.second and devitrification temperature is -20 degrees C or more. The glass substrate has density of 2.58 g/cm3 or less and brittleness index of less than 6800 m-1/2.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The light source is an Yttrium aluminum garnet (YAG) solid state laser device or helium-cadmium (He-Cd) gas laser device or argon (Ar) laser device.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The substrate has haze rate of 10-50% at wavelength of 800 nm. The diameter of bottom face of discontinuous monticulus portion is 50-2000 nm. Preferred Composition: The oxide (e3) comprises mixed oxide of silicon and tin, and the molar ratio of tin and silicon in mixed oxide is 0.2:0.8-0.5:0.5.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The semiconductor layer as cathode, anode (3) and passivated proton source-containing electrolyte (2) are placed in electrolysis equipment. Preferred Composition: The electrolyte comprises ionic liquid, organic salt, inorganic salt, inorganic base, inorganic acid, alcohol, organic acid, organic base and/or acidic organic compound. The anion of ionic liquid is chosen from halide, nitrate, sulfonate, imide, sulfate, tosylate, carboxylate, borate, phosphate, aluminate, thiocyanate, isothiocyanate, amide, antimoniate, and arsenate, preferably chloride, nitrate, trifluoromethanesulfonate and acetate. The cation of ionic liquid is chosen from imidazolium ion, pyrrolidinium ion, pyridinium ion, piperidinium ion, guanidinium ion, uranium ion, thiouranium ion, morpholinium ion, ammonium ion, phosphonium ion, sulfonium ion, pyrazolium ion, tetrazolium ion, thiophenium ion, thiazolium ion and quinolinium ion, preferably imidazolium ion. Preferred Properties: The ionic liquid has electroconductivity of 10-20 mS/cm and viscosity of less than 50 mPa.second.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The protection gas is inert gas. The weight ratio of the abrasive medium to the metal mixture powder is 20:1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The nanocarbon is carbon nanotube which is not oxidized using an oxidizing agent. Preferred Properties: The nanocarbon thin film has surface resistivity of 107 Omega /square or less and visible light transmittance of 60% or more.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic solvent is hydrophobic organic solvent. Preferred Process: The cast film is formed in atmosphere with relative humidity of 60% or more. Preferred Definitions:    R4=9-anthranil or 1-pyrenyl.    EXAMPLE - (In g) 1-pyrene methanol acrylate (0.286), octadecyloxy ethylmethacrylate (3.44) and azobisisobutyronitrile (59.4 mg) dissolved in toluene (2 ml) were stirred at 65 degrees C in nitrogen atmosphere for 12 hours. The reaction material was dissolved in tetrahydrofuran and methanol was added. The obtained polymer was deposited and vacuum dried to obtain octadecyloxy ethylmethacrylate-1-pyrene methanol acrylate copolymer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal is nickel, cobalt, copper, silver, aluminum, gold or their alloys. The thermoelectric conversion material is bismuth, bismuth telluride or lead telluride, preferably bismuth telluride containing antimony or selenium. The catalyst layer contains ceramics comprising platinum or palladium. The ceramics contain alumina, tin oxide or zirconia.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): Preparation of (I) comprises introducing one or more aryl and/or arylamino groups to the pyrene-structure by organometallic coupling reaction. SPECIFIC COMPOUNDS - 73 Compounds (I) are disclosed e.g. 7-tert-butyl-N,N,N',N'-tetra-p-tolyl-pyren-1,3-diamine of formula (Ia), 7-tert-butyl-N,N,N',N'-tetrakis-(2,4-dimethyl-phenyl)-pyren-1,3-diamine, 7-tert-butyl-N,N,N',N'-tetraphenyl-pyren-1,3-diamine, 7-tert-butyl-N,N'-di-p-tolyl-N,N'-di-p-benzonitrile-dipyren-1,3-diamine and 7-tert-butyl-1,3-bis-(4-diphenyl-phenylamine).    EXAMPLE - 1,3-Dibromo-7-tert-butyl-pyrene (48.06 mmole), di-p-tolylamine (105.7 mmole) and sodium-tert-butylate (153.8 mmole) were suspended in toluene (500 ml). Then obtained suspension was added with palladium acetate (1.20 mmole) and a 1 M tri-tert-butylphosphine-solution (2.4 ml). The reaction mixture was heated for 2 hours under reflux. After cooling, the organic phase was separated, washed trice with water (200 ml) and then evaporated to dryness. The residue was extracted with hot toluene, recrystallized from toluene and finally sublimed under high vacuum to obtain 7-tert-butyl-N,N,N',N'-tetra-p-toyl-pyren-1,3-diamine with a purity of 99.9%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The P-type metal oxide is molybdenum oxide, vanadium pentoxide, nickel oxide, or tungsten oxide. The N-type metal oxide is titanium oxide (TiOx, where x is more than 1 to less than 2), titanium dioxide, zinc oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, gallium-doped zinc oxide, nitrogen-doped zinc oxide, and/or aluminum-gallium-zinc oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The catalyzed liquid used during manufacture of solar cell electrode comprises (in weight%) hydrochloric acid (0.01-0.03), palladium chloride (0.1-0.2), distilled water as tin chloride (0.1-0.3) and remainder of solvent. The catalyst activation liquid used during manufacture of solar cell electrode comprises hydrochloric acid (0.002-0.004), distilled water as sulfuric acid (0.001-0.003) and remainder of solvent. The etchant used during manufacture of solar cell electrode comprises sulfuric acid (30-50), glycerine (0.1-0.2), distilled water as propylene glycol (0.2-0.3) and remainder of solvent.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The phosphorus source is chosen from phosphate or aluminum metaphosphate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The rare earth element is chosen from nickel, cerium, lanthanum, praseodymium, neodymium, radon, samarium, europium and gadolinium.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The ratio of magnesium oxide and calcium oxide in the glass plate is 30 or less. The glass plate comprises (in %mass) silica (60-74), alumina (0.5-2.5), boron trioxide (0-5), sodium oxide (10-20), potassium oxide (0-3), magnesium oxide (4.5-10), calcium oxide (1-10), iron oxide (0.005-0.06), antimony oxide (0-0.1) and zirconium oxide (0-3), does not contain cerium oxide. The solar transmittance and visible ray transmittance of glass plate having thickness of 4 mm, are 85% or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The conductive material is transparent conductive oxide, which is indium tin oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The display device includes an anti-reflective layer made of silicon nitride.
TECHNOLOGY FOCUS - METALLURGY - The back contacts are made of aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The substrate with dielectric layer is made of sapphire aluminum oxide, silicon, zinc oxide, gallium nitride, gallium arsenate, silicon carbide, aluminum nitride or magnesium oxide material. The dielectric layer is made of silicon oxide or silicon nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The dopant is made of aluminum nitride (AlN), gallium nitride (GaN) or indium nitride (InN), lithium nitride (LiN), N-acetyl-glucosamine and magnesium nitride (MgN).    TECHNOLOGY FOCUS - METALLURGY - The dopant is made of lithium (Li), sodium (Na), potassium (K), gold (Au), silver (Ag), copper (Cu) and neptunium (Np).
TECHNOLOGY FOCUS - METALLURGY - The group III-nitride semiconductor film is deposited and doped with magnesium, iron, carbon, oxygen, silicon, boron or hydrogen, where group III-nitride semiconductor film comprises heterostructure comprising layers of gallium-nitride, aluminum-nitride, indium-nitride, aluminum-gallium-nitride, indium-gallium-nitride or aluminum-indium-nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The material of the reflector rod is non-crystalline material such as ITO, zinc oxide (ZnO), nitrides or oxides of silicon (Si), titanium (Ti), tantalum (Ta), and zirconium (Zr), or composite material of nitrides or oxides of Si, Ti, Ta, and Zr.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Processes: Substrate is annealed in the presence of S. Cu, Zn, and Sn are deposited through effusion cells. S and/or Se is deposited via a cracking cell. Cu, Zn, Sn, and S and/or Se are deposited simultaneously on the substrate. The fabrication method involves providing Cu, Zn, Sn, and S and/or Se in non-elemental form prior to thermal evaporation. Preferred Components: Substrate contains glass having a surface consists of molybdenum (Mo) coating, wherein absorber layer is deposited on the Mo coating. Emitter layer contains cadmium sulfide (CdS). Window layer contains intrinsic zinc oxide (i-ZnO) and aluminum doped zinc oxide (Al-ZnO).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The additive comprises 4-25 mass ppm of titanium and 3-12 mass ppm of sulfur.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The crosslinkable group is alkenyl group which has unsaturated double bond at the terminal and alkoxy silyl group. The crosslinking point is alkyl group bonded with silicon atom.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyimide silicone has crosslinkable group or crosslinking point as crosslinking portion. The resin composition further contains peroxide which generates radical by heating to temperature (A).
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Components: The p-type copper oxynitride layer is of formula (Cu2OxNy). The window layer: has a band gap energy, which is greater than that of light absorbing layer; and transmits solar light incident from the transparent electrode. The light absorbing layer comprises one of amorphous silicon, amorphous silicon germanium, micro-crystalline silicon, micro-crystalline silicon germanium, crystalline silicon, crystalline silicon germanium, copper oxide, zinc oxide, or titanium oxide. The solar cell further comprises: an negative (n)-type layer between the light absorbing layer and the rear electrode, where the window layer, the n-type layer, and the light absorbing layer constitute a p-i-n structure; an optional window layer between the light absorbing layer and the window layer, where a band gap energy of the optional window layer is less than that of the window layer; and an upper light absorbing layer between the window layer and the transparent electrode, where the window layer transmits a portion of solar light incident from the transparent electrode and reflects other portions. In the solar cell: the window layer and the light absorbing layer constitute a p-n structure; a refractive index of the window layer is greater than that of the transparent electrode and less than that of the light absorbing layer; the light absorbed by the light absorbing layer has a shorter wavelength than that absorbed by the upper light absorbing layer; and each of the light absorbing layer and the upper light absorbing layer has a p-i-n structure.x+y = 1; andy = greater than 0 and less than 0.01.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The non-metallic element is chosen from element of group XV, group XVI element excluding oxygen and group XVII element, preferably nitrogen. The film-forming gas contains gas of nitrogen-containing organosilicon compound.
TECHNOLOGY FOCUS - METALLURGY - The semiconductor element and semimetal element are made of boron, germanium, arsenic, antimony, tellurium or bismuth. The metallic element is made alkali metal, alkaline-earth metal element, technetium, zinc group element, cadmium, mercury, aluminum, tin, lead, gallium, indium, or thallium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The sodium containing compound comprises sodium fluoride, sodium chloride, sodium molybdate, sodium selenide, sodium hydroxide, sodium oxide, sodium sulfate, sodium selenate, sodium sulfide, sodium sulfite, sodium tungstate, sodium titanate, sodium metavanadate, or sodium orthovanadate.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The method further comprises providing a push rod, and a pushing step comprising stopping the supply of phosphorus source gas carrying source and dry oxygen for 5-40 minutes to promote the furnace environment with nitrogen atmosphere, where the nitrogen flow is 30 l/minute.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The plastic substrate is any polyethylene glycol terephthalate, polyimide or polymethylmethacrylate. The wavelength of UV light is 254 nm or 365 nm.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): Diene-type carboxylic acid or its anhydride is reacted with alkali, to obtain diene-type carboxylate anion.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polymerizable or curable composition further contains radical initiator and/or a drier. EXAMPLE - 6-Tert-butyl-2,4-xylenol and ADEKA STAB 2112 (RTM: organophosphite processing stabilizer) were added to alpha-allyloxy methyl acrylic acid, mixed and reacted, to obtain alpha-allyloxy methylacrylic-acid ion.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The inorganic semiconductor thin film formed on a substrate is made of titanium dioxide, tin oxide, zinc oxide, tungsten trioxide or niobium pentoxide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): The bromine-containing compound of formula (II) is reacted with triisopropyl borate in presence of n-butyl lithium and tetrahydrofuran to obtain boron hydroxide-containing compound of formula (III). The obtained compound (III) is reacted in presence of palladium tetrakis triphenylphosphine, tetrahydrofuran and sodium hydroxide, to obtain fluorene derivative (I). Preferred Definitions:    Ar1-Ar3=phenyl, biphenyl, 1-naphthyl, 2-naphthyl, fluorene, thiophene, pyrrol, furan or pyridyl.    SPECIFIC COMPOUNDS - 180 fluorene derivatives e.g. N-(9,9-dimethyl-9H-fluoren-2-yl)-N,N',N'-triphenyl-5-(9-phenyl-9H-carbazol-3-yl) -benzene-1,3-diamine, 5-(9-biphenyl-4-yl-9H-carbazol-3-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl) -N,N',N'-triphenyl-benzene-1,3-diamine, N-(9,9-dimethyl-9H-fluoren-2-yl)-5-(9-naphthalen-2-yl-9H-carbazol-3-yl)-N,N', N'-triphenyl-benzene-1,3-diamine, N-(9,9-dimethyl-9H-fluoren-2-yl)-5-(9-naphthalen-1-yl-9H-carbazol-3-yl)-N,N', N'-triphenyl-benzene-1,3-diamine and N-(9,9-dimethyl-9H-fluoren-2-yl) -5-(9-(9,9-dimethyl-9H-fluoren-2-yl)-9H-carbazol-3-yl)-N,N',N'-triphenyl-benzene-1, -3-diamine are specifically claimed.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Method: The variable temperature diffusion process is preferably performed by (1) inserting the roughed silicon wafer into a quartz boat; putting the boat into a furnace; increasing the furnace temperature to 700-810 degrees C; feeding large-scale nitrogen (5-10 standard liter/minute (slm)), small-scale nitrogen (0.7-1.5 slm) and oxygen (0.3-1 slm) to carry out the low-temperature pre-deposition diffusion for 15-20 minutes; (2) increasing the furnace temperature to 810-830 degrees C; feeding the large-scale nitrogen (5-10 slm) to carry out junction pushing for 10-15 minutes; and (3) feeding the large-scale nitrogen (5-10 slm), small-scale nitrogen (0.5-1.5 slm) and oxygen (0.1-0.8 slm); and then increasing the furnace temperature to 830-870 degrees C to carry out the high-temperature deposition diffusion for 5-15 minutes.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The anti-reflection film comprises aluminum oxide or silicon nitride film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The P-type material is boron, gallium, indium and/or aluminum. The N-type material is phosphorus, arsenide and/or stibium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The molybdate is ammonium molybdate, molybdenum chloride or molybdic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The metal salt comprises cobalt salt and transition metal salt. The cobalt salt is cobalt sulfate, cobalt nitrate, cobalt chloride or ethyl acetate. The transition metal salt is ammonium vanadate, molybdate, tungstate or nitric acid cerium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The carbon material is active carbon, graphite, nanometer carbon fiber, carbon nano-tube or carbon. The nitrogen-containing compound is pyridine, pyrrole, diethylamine, triethylamine, ethylene diamine, N,N-dimethyl formamide, N,N-dimethyl acetamide, 3, 3'-hydroxyl diphenylamine or N-methyl pyrrolidone. Preferred Process: The catalyst is prepared by using solvent such as water, methanol, ethanol or chloroform, and inert gas such as argon or nitrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The water-retaining substance comprises silica, and/or heteropolyacid, where the silica is gas phase silica or silica gel, and the heteropolyacid is phosphotungstic acid, phosphomolybdic acid, silicotungstic acid or silicomolybdic acid.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The low boiling point alcohol is isopropanol, propyl alcohol, ethanol or butanol. The high boiling point solvent is N,N-dimethylformamide, N,N-dimethylacetylamide, dimethyl sulfoxide or glycol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: A material of the p-type semiconductor layer comprises silicon, germanium, or gallium arsenide. The halogen-doped aluminum oxide layer comprises fluorine, chlorine, bromine, or iodine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The source of extra chalcogen includes particles of an elemental chalcogen. The chalcogen is selenium, sulfur and/or tellurium. The group IB element is copper. In the precursor material the at least one element of group IIIA include gallium, indium and/or aluminum. The group IB-chalcogenide nanoparticles include nanoparticles of copper selenide, copper sulfide and/or copper telluride. The group IIIA-chalcogenide nanoparticles include nanoparticles of indium selenide, nanoparticles of indium sulfide, nanoparticles of indium telluride, nanoparticles of gallium selenide, nanoparticles of gallium sulfide and/or gallium telluride. The group IB-chalcogenide nanoparticles and/or the group IIIA-chalcogenide nanoparticles include a chalcogenide core with a chalcogen-containing coating, where the coating provides the extra source of chalcogen. The precursor material (B1) further comprises a source of extra chalcogen material mixed with the core-shell nanoparticles. The core nanoparticles include nanoparticles of a group IB element and nanoparticles of at least one group IIIA elements, where the group IIIA elements include indium and/or gallium. The non-oxygen chalcogen material is selenium, sulfur and/or tellurium. The core shell nanoparticles include core nanoparticles of: a binary alloy (102), where the binary alloy contains a group IB element and a chalcogen and the chalcogen is selenium, sulfur or tellurium; a binary alloy, where the binary alloy contains a group IIIA element and/or a chalcogen and the group IIIA element is indium or gallium; or a ternary alloy, where the ternary alloy contains two different group IIIA elements and a chalcogen and the two different group IIIA elements are indium and gallium and the chalcogen is selenium and/or sulfur and/or tellurium. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The light-absorbing layer is made of crystalline silicon.    TECHNOLOGY FOCUS - METALLURGY - The transparent conductive layers are made of oxidized indium, tin, molybdenum, titanium, zirconium, zinc, gadolinium, niobium, neodymium and tantalum.
TECHNOLOGY FOCUS - METALLURGY - The N type CIGS layer is deposited by mixing an alkali metal with a selenide i.e. sodium selenide, using a co-evaporation method. The alkali metal is natrium (Na).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Catalyst: In the supported catalyst, M is Nb, Ta, or Zr, and x is equal to 3. The support comprises niobium oxide (NbO2) or NbMyOz, y is less than 1, and z is greater than or equal to 2. EXAMPLE - No example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The core comprises a material consisting of copper, aluminum, brass, bronze, nickel, silver and/or their alloys.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The non-acid protic solvent comprises ethylene glycol. The high polarity solvent comprises dimethyl sulfoxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The average grain size of amorphous/nanocrystalline layers are varied by altering the flow ratio of hydrogen to combination of silicon source with hydrogen, and the deposition temperature is under a carbon tetrafluoride flow.
TECHNOLOGY FOCUS - POLYMERS - Preparation (Claimed): Preparation of the polymer (P1) involves coupling the monomers (A1) with each other, and/or with at least one monomer of formula R4-Ar3-R5, in an aryl-aryl coupling reaction.Ar3=T1.Preferred Compounds: The polymer (P1) is selected from 23 compounds, as given in the specification, e.g. compound of formula (II).n=greater than 1. Preferred Definitions:    Ar1 and Ar2=thiophene-2,5-diyl, thiazole-2,5-diyl, selenophene-2,5-diyl, furan-2,5-diyl, thieno(3,2-b)thiophene-2,5-diyl, thieno(2,3-b)thiophene-2,5-diyl, selenopheno(3,2-b)selenophene-2,5-diyl, selenopheno(2,3-b)selenophene-2,5-diyl, selenopheno(3,2-b)thiophene-2,5-diyl or selenopheno(2,3-b)thiophene-2,5-diyl (all optionally mono- or polysubstituted with R3).    EXAMPLE - A mixture of 2,7-dibromo4,5-diheptyl-benzo(1,3-d) bisthiazole (91.4 mg), 2,5-bis-trimethylstannanyl-thiophene (137.1 mg), 4,7-dibromo-5,6-bis-octyloxy-benzo(1,2,5)thiadiazole (92.1 mg), tris(dibenzyl-ideneacetone)dipalladium(0) (6.1 mg), tri(o-tolyl)phosphine (8.1 mg) and chlorobenzene (4.5 cm3) was degassed for 10 minutes. The mixture was then heated at 170 degrees C in a reactor for 30 minutes. After work up, poly(4,7-5,6-bis-octyloxy-benzo(1,2,5)thiadiazole)-co-(2,5-thienyl)-co-(2,7-4,5-diheptyl-benzo(1,2-d;4,3-d)bisthiazole) (having number average molecular weight of 3700 and weight average molecular weight 5900) (80 mg; 51%) was obtained as a black solid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The solar cell comprises silicide which is made of one metal material and silicon, where metal material comprises nickel (Ni), manganese (Mn), silver (Ag), platinum (Pt), zinc (Zn), gold (Au) and iron (Fe). The 1N template conductive layer is amorphous silicon, and 2N template conductive layer is microcrystalline silicon. The second electrode is made of transparent conductive oxide, and first electrode is made of transparent conductive oxide or metal material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electroconductive particles are carbon particles. The active material contains lithium transition metal oxide.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The electroconductive organic polymer compound is polyaniline, polypyrrole, polythiophene and/or their derivatives, preferably derivative of polythiophene. The aqueous emulsion adhesive is an acryl type emulsion adhesive.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Composition: The opto-electric device includes organic layer obtained by curing actinic radiation photocurable resin composition containing (in weight%) component (A) (30-90) chosen from aromatic acrylate and (meth)acrylate component, component (B) (1-30) chosen from monofunctional acrylate, (meth)acrylate, vinylamide, acrylamide and (meth)acrylamide component and photoinitiator (C) (0.1-10), or component (D) (10-60) chosen from polybutadiene acrylate and (meth)acrylate, component E (1-89.9) chosen from acrylate and (meth)acrylate, and component (C), or component (F) (5-50) chosen from urethane acrylate and (meth)acrylate, component (E) (1-94.9), and component (C), or component (G) (20-98.9) chosen from acrylate or (meth)acrylate, thiol component (H) (1-20), or epoxy polysiloxane component (I) (20-99.9), component (K) (0.2-79.9) chosen from epoxy or oxetane functional organic component or mixture of epoxy or oxetane functional organic components not exhibiting polysiloxane group and photoinitiator (J) (0.1-10).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Element: The group 13 element is indium. Preferred Properties: The resistivity of transparent electrode is 7x 10-3 Omega .cm or less. The changes of resistivity when the transparent electrode is maintained at 85 degrees C for 1000 hours under relative humidity of 85% is 0.8-1.2.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The substrate is soda-lime glass substrate.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The diffusion barrier comprises titanium nitride, tantalum nitride and/or tantalum nitride silicide. The buffer layer comprises cadmium sulfide. The transparent conductive oxide layer (702) comprises aluminum-doped zinc oxide or indium-tin-oxide. Preferred Process: The method further involves forming a metal grid electrode (802) on the transparent conductive electrode, and dividing the solar cell into several isolated substructures using laser or mechanical scriber.    TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The constituent components further comprise copper, zinc and/or tin. The stress-relief layer comprises soft metal containing aluminum, copper and silver. The absorber layer comprises copper/zinc/tin(sulfur, selenium) alloy. Preferred Properties: The stress-relief layer has thickness of 50 nm to 1 mu m. The diffusion barrier has thickness of 3-50 nm. The buffer layer has thickness of 60-70 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The crystalline semiconductor substrate and/or crystalline semiconductor layer (a) comprise single crystalline silicon or polycrystalline silicon. Dopant concentration of the amorphous semiconductor layer is higher than dopant concentration of the crystalline semiconductor layer (a). The solar cell further comprises semiconductor layer (b) (24) disposed between crystalline semiconductor substrate and second metal electrode layer (b), and passivation layer (22) disposed between the amorphous semiconductor layer and metal electrode layer (a). The dopant concentration of the semiconductor layer (b) is higher than dopant concentration of the crystalline semiconductor substrate. The semiconductor layer (b) comprises amorphous silicon. Preferred Properties: The crystalline semiconductor layer (a) has thickness of less than 500 nm. The amorphous semiconductor layer has thickness of 1-20 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Barrier layers contain gallium arsenide (GaAs), and quantum dot layers contain indium gallium arsenide (InxGa1-xAs).x=0-1.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The cyclic olefin is tetracyclododecene. The vinyl compound is vinyl cyclohexane. The amount of ethylene, cyclic olefin and vinyl compound is 40-65 mol%, 30-45 mol% and 3-20 mol%, respectively. The base material is arranged on each pair of film-forming roll, and the gas-barrier layer is laminated by plasma chemical vapor deposition method. A transparent conductive film is further laminated on single surface of base material, by sputtering method or ion-plating method.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: In the carbon distribution curve, the difference of maximum value and minimum value is 1 atomic% or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The thin film layer is formed by vacuum coating method or plasma chemical vapor deposition using film-forming roll. Preferred Property: The laminated film has water-vapor permeability of 5x 104 g/m2/day.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The cyclic aliphatic epoxy resin is of formulae (I) and/or (II). The resin composition further contains glycidyl-type epoxy resin, glass filler and hindered phenolic antioxidant. The amount of glycidyl-type epoxy resin is 0.1-10 parts mass with respect to 100 parts mass of cycloaliphatic epoxy resin. The glass filler is glass tissue. The amount of glass filler is 1-90 %mass.X=-O-, -S-, -SO-, -SO2-, -CH2-, CH(CH3)- or C(CH3)2.Preferred Property: The transparent composite substrate has total light transmittance 80% or more at 440 nm in thickness of 2 mm.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The molar ratio of p-phenylbenzyl (meth)acrylate and o-phenylbenzyl (meth)acrylate in monofunctional (meth)acrylate compound (I) is 50/50-10/90. The content of monofunctional (meth)acrylate compound (I) is 50 %mass or more. The content of bifunctional (meth)acrylate (II) is 40 %mass or less. The composition further contains (meth)acrylate compound (m1) having fluorene structure, and (meth)acrylate compound (m2) other than (meth)acrylate compound (m1). Preferred Property: The refractive index of composition is 1.57 or more at 25 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic particles are chosen from titanium oxide, zirconium oxide, calcium oxide, silicon oxide, zinc oxide, aluminum oxide, zinc sulfide, calcium sulfate, barium sulfate, barium titanate, and strontium titanate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of organic solvent in organic-solvent solution is 20 %mass or less.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The film has average coefficient of thermal expansion of -10 ppm/ degrees C to 20 ppm/ degrees C, at 100-200 degrees C, thickness of 1-50 mu m, and satisfy VTM-0 standard prescribed by UL94 method. Decline in the reflectance of the light with wavelength of 425 nm after heating the film, at 200 degrees C for 2 hours is 2% or less. Preferred Composition: The film does not contain flame retardant.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The gas contains noble gas and nitrogen gas. The film-forming gas contains organosilicon compound and oxygen. The thin film layer contains silicon, oxygen and carbon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The nonmetallic element is group 15 elements, group 16 elements excluding oxygen and/or group 17 elements, preferably nitrogen. The content of nitrogen in thin film layer with respect to total content of silicon, oxygen, carbon and nitrogen is 1 atomic% or more. The film-forming gas is gas of compound containing oxygen and nitrogen or gas of nitrogen-containing organosilicon compound. Preferred Layer: The thin film layer is a layer formed by plasma chemical vapor deposition method using film-forming gas containing nitrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Conditions: Pressure of processing chamber interior during capture of impurity is less than or equal to 500 Pa. Pressure of processing chamber interior during prevention of molten silicon metal contamination is greater than or equal to 500 Pa. Preferred Processes: Silicon in crucible is heated beyond silicon melting point.
TECHNOLOGY FOCUS - POLYMERS - The reactor portion, piston and cylinder portions are made of quartz glass or borosilicic acid glass.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The carbon nanotube is single walled, double walled, thin multi-walled, multi-walled and/or roped. The solvent contained in the carbon nanotube solution is water, 1-20C aliphatic alcohol and/or carbon dioxide, where the water is necessarily contained. The carbon nanotube is present at 0.0001-10 parts by weight. The carbon nanotube solution further contains a nitro compound of formula (R-(NOx)y) (0.00001-3 mol/l). The oxidizer is oxygen, air, ozone, hydrogen peroxide, nitric acid, nitro compound and/or nitric acid oxidizer and is present at 0.001-10 equivalent weight in proportion to a carbon equivalent weight of the carbon nanotube within the carbon nanotube liquid mixture. The acid solution is an aqueous solution containing any one acid comprising nitric acid, phosphoric acid, sulfuric acid, hydrochloric acid and/or fluoric acid.R = 1-7C alkyl or 6-20 aryl; andx, y = 1-3.Preferred Method: The temperature at the sub-critical water or supercritical water condition is 100-600 degrees C. The carbon nanotube liquid mixture containing the oxidizer is prepared by injecting the oxidizer to make it contact with the carbon nanotube solution, while the carbon nanotube solution is injected into a pre-heater located at a front end of the first purifying reactor and is preheated (S400) at a temperature of 200-370 degrees C. The method further comprises: cooling the first or the second purified product at 0-100 degrees C; filtering the product after cooling; recovering the filtered product; de-pressurizing the product at a pressure of 1-10 atmospheres; and recovering the de-pressurized product. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The electrically conductive film is made of component selected from the group that comprised indium-tin oxide (ITO), indium-zinc oxide (IZO), indium oxide (In2O3), tin oxide (SnO2), zinc oxide (ZnO) and carbon nanotube that contained silicon oxide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The aromatic diamine is aromatic diamine containing 70 mol% or more of benzoxazole or phenylenediamine structure. The aromatic tetracarboxylic acid is aromatic tetracarboxylic acid containing 70 mol% or more of pyromellitic acid residue or biphenyl tetracarboxylic-acid structure.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The average surface roughness of the surface other than that with craters is 1-4 nm. Crates are present in both surfaces of the film. The single-sided average surface roughness of the film with smooth surface is 0.2-1 nm. Preferred Conditions: The precursor solution of polyimide contains lubricant particles having an average particle diameter of 0.03-2.5 mu m. A separate solution not containing lubricant particles having an average particle diameter of 0.03-2.5 mu m of another polyimide, or containing 0.01 %mass or less, is used in the manufacture of polyimide film having polyimide layer (A) containing lubricant particles and polyimide layer (B) not containing slipping lubricant particles. At least one portion of inorganic filler of the film surface vicinity is removed by dissolving by acid-treatment. Pressure-heating is carried out by heating in vacuum.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The thickness of environmentally-resistant functional layer is 0.1-100 mu m. The polymer component is horizontally installed such that the environmentally-resistant functional layer side becomes the lower surface which contacts air. A Bunsen burner is installed such that the flame opening of the burner is located in the lower portion separated from the lower surface at the side of the environmentally-resistant functional layer by 45 mm. The edge of polymer component is contacted with the flame and horizontal-firing test which provides indirect flame of 55-mm-high Bunsen burner to the lower surface of functional layer for 30 seconds from the flame opening is carried out. The polymer component has flame retardance with respect to the flame. The functional layer is a photocatalyst layer, a pollution protection layer, a humidity control layer, a water-vapor barrier, a water-resistant layer, a water-repellent layer, a hydrophilic layer, an oil-repellent layer, a sanitary function layer, an antibacterial layer, an antifungal layer, or a deodorizing layer.
TECHNOLOGY FOCUS - POLYMERS - Preparation: No general preparation given. Preferred Polymer: The high molecular compound further contains structural unit chosen from formula (III) or (IV). The high molecular compound has number average molecular weight of 2x 103-1x 106.a,c=1-4;andb=0-4. EXAMPLE - (In g) 2-bromo-3-dodecyl thio-thiophene (1), 5,5'-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)-2,2'-bithiophene (0.55), tetrahydrofuran (20 ml), tri-t-butylphosphonium tetrafluoroborate (50 mg), tris(dibenzylidene acetone)dipalladium (64 mg) and potassium carbonate aqueous solution (5.5 ml) were refluxed for 5 hours. The reaction liquid was concentrated and poured into water. Toluene was added and the toluene layer was extracted and concentrated to obtain high molecular compound (1.7) with yield of 90%.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The thickness of physically functional layer is 0.005-100 mu m. The polymer component is horizontally installed such that the physically functional layer side becomes the lower surface which contacts air. A Bunsen burner is installed such that the flame opening of the burner is located in the lower portion separated from the lower surface at the side of the physically functional layer by 45 mm. The edge of polymer component is contacted with the flame and horizontal-firing test which provides indirect flame of 55-mm-high Bunsen burner to the lower surface of physically functional layer for 30 seconds from the flame opening is carried out. The polymer component has flame retardance with respect to the flame. The physically functional layer is a conductive layer, a fingerprint-proof layer, a hard-coat layer, an ink absorption layer, an inorganic-particle-content layer, a reflection-prevention layer, or an optical permselective layer. The chemically functional layer is an alkali-resistant layer, an acid-resistant layer, or a solvent-resistant layer.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Processes: Conveyed ammonium bicarbonate is heated and decomposed in CCS pressure injection station. Carbon dioxide isolated from decomposition generated gas is pressure-injected at sea-bottom after pressurizing with compressor and liquefying. Aqueous ammonia is recovered from decomposition generated gas and conveyed to carbon dioxide-containing waste gas site of incidence to be used for fixing carbon dioxide-containing waste gas as ammonium bicarbonate.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): Grignard-reaction reagent prepared from halo thiophene compound of formula (II) is reacted with Grignard-reaction reagent prepared from dihalo thiophene compound of formula (III) in presence of nickel complex compound of formula (IV) having bidentate ligand, to obtain thiophene polymer.X=halo;andL-L=bidentate-type ligand. EXAMPLE - Dichloro(1,3-bis(diphenylphosphino)propane)nickel (542 mg) and tetrahydrofuran (200 ml) were mixed under nitrogen stream, cooled to 10 degrees C or less, Grignard-reaction reagent obtained from 2-bromo-thiophene was dripped to the reaction mixture, stirred for 10 minutes, cooled, Grignard reaction reagent prepared from 2,5-dibromo-3-hexyl thiophene (80 mmol) was dripped to the reaction mixture, heated to room temperature, reacted for 12 hours, diluted hydrochloric acid (100 ml) and excess methanol were added to reaction mixture, washed using water and methanol, dried and purified using acetone, to obtain thiophene polymer (7.3 g).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The adhesive imparting agent is silane-coupling agent. Preferred Group: The alkenyl group in the hardening agent is vinyl group.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The hardening agent is organopolysiloxane having alkenyl group or hydrosilyl group. The polyhedral structure polysiloxane modified component is liquefied at 20 degrees C, and has 3 or more hydrosilyl groups or alkenyl group in a molecule. The hydrosilyl group or alkenyl-group containing compound (c) is siloxane compound having hydrosilyl group or alkenyl group, cyclosiloxane having hydrosilyl group or alkenyl group. The polyhedral structure polysiloxane-type composition further contains hydrosilylation catalyst and curing retarder.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic solvent is tetrahydrofuran, 1,3-dioxolane and/or 1,4-dioxane.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyamidoimide (I) is of formula (II). Preferred Property: The polyamidoimide film has linear thermal expansion coefficient of 20 ppm/ degrees C or less at 100-300 degrees C.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The component (C) is amine hardening accelerator and/or modified imidazole-type hardening accelerator. The ratio of number-of-moles of acid anhydride group of acid anhydride and number-of-moles of phenolic hydroxyl group of phenol resin with respect to number-of-moles of epoxy group of crystalline epoxy resin is 0.6-1.2. The flux agent is benzoic acid and/or 2-methyl-benzoic acid.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The epoxy resin composition further contains (in %mass) solid epoxy resin (D) (10-50), and flux agent (G) (1-15). The mass ratio of phenol resin with respect to acid anhydride is 10:90-70:30. Preferred Property: The epoxy resin composition has melt viscosity of 1 Pa.second or less at 150 degrees C and gelling time of 120-300 seconds at 150 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The container main component contains metal impurity chosen from iron, aluminum, manganese, magnesium, calcium, copper, titanium, chromium, nickel, tungsten, vanadium, zinc and zirconium. The content of metal impurity is 1000 ppm or less, preferably 10 ppm or less. Preferred Properties: The thickness of the mold release agent is 300-1000 mu m, preferably 350-600 mu m. The open-pore rate of the porous component is 10-40%, preferably 20-30%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The ion beam containing fluorine ion is ion beam containing CxFy ion. The zinc containing deposition source is zinc oxide, and the ion beam further contains oxygen ion. The current density of the ion beam is 200-1500 micron/cm2. The mix ratio of the CxFy gas and oxygen gas is 1:99-20:80. Preferred Process: The gas is introduced in the ion formation space. Voltage is applied to the filament opposing in the ion formation source and thermoelectron is discharged. The gas is ionized in the anode side and spiral movement of the discharged thermoelectron is carried out. Ion beam formed by ionization is oriented to the substrate side and irradiated.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The magnesium hydroxide fine particles and magnesium oxide microparticles have a purity of 99.9 %mass or more, a chlorine content of 500 mass ppm or less, and a ratio of 1-10 with respect to volume-based average particle diameter and number-based average particle diameter. The sum total content of iron, titanium, nickel, chromium, molybdenum and magnesium in the magnesium hydroxide fine particles and magnesium oxide microparticles is 500 mass ppm or less. The magnesium oxide microparticles have a citric acid activity (40%) of 20-2000 seconds. Preferred Method: The hydrothermally treated magnesium hydroxide slurry is filtered and washed with water, to obtain magnesium hydroxide cake (I). Pure water (5-100 times) is added and stirred with cake (I), filtered, and washed with water to obtain magnesium hydroxide cake (II). The process is repeated 1-20 times, to obtain highly purified magnesium hydroxide cake. The cake is dried to obtain magnesium hydroxide fine particles. Raw salt magnesium aqueous solution is prepared and reacted with 1-18N aqueous alkali solution at a reaction rate of 1-30 mol%, to obtain crude magnesium hydroxide slurry. A coagulant is added to the crude slurry, magnesium hydroxide is filtered, and magnesium chloride solution is obtained as filtrate, or coagulant is added, magnesium hydroxide is coagulated and sedimented, and magnesium chloride aqueous solution is obtained as supernatant.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The tin catalyst consists of a tin-zinc alloy comprising 3-6 % of zinc. The substrate comprises titanium. The metal oxide catalyst comprises tantalum oxide deposited onto the substrate and iridium oxide deposited onto the tantalum oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The catholyte comprises 2M potassium chloride, and an aqueous solution of 0.1-3M of a compound consisting of potassium sulfate having a pH of 6.5 and sodium sulfate having a pH of 5.5. The anolyte comprises 1M sodium hydroxide, and 0.5M sulfuric acid.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): The ionic compound of formula: AM(O-CH(CH3)CH2(OCH2CH2)n-1OCH3)(OY2)(OY3)(OY4) is produced by reacting metallic compound of formula: AMH4 and 1,2-epoxyethane having group of formula: -CH2(OCH2CH2)n-1OCH3.n=2 or more.Preferred Process: The ion conductive material is obtained by adding salt including element (A) to the ionic compound (I), or dispersing ionic compound in structural material. Preferred Definitions:    A=Li or Na;    M=Al or B;and    Y1-Y4=oligoalkylene ether, where at least one of Y1- approximately 4 includes alkyl as electron donating group on carbon which is located in position with respect to oxygen atom adjacent to M and has 2-5 repeating numbers of alkylene oxide.    EXAMPLE - Polyoxyethylene methyl glycidyl ether (in g) (2) was dissolved in tetrahydrofuran (5 mL). Solution (2.3 mL) of lithium aluminum hydride was added to mixture and reacted. The reaction mixture was heated at 45 degrees C, and stirred for 2.5 hours, to obtain ionic compound.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The field effect transistor has a structure comprising topgate bottom-contact structure, bottom-gate top-contact structure, top-gate top-contact structure, and bottom-gate bottom contact structure.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No preparation method is given. SPECIFIC COMPOUNDS - 7 Compounds (A) are disclosed e.g. (benzo(rst)phenanthro(10,1,2-cde)pentaphene-1,9-diylbis(ethyne-2,1-diyl))bis(triisopropylsilane) of formula (Aa), 9,18-bis(2-ethylhexyloxy)benzo(rst)phenanthro(10,1,2-cde)pentaphene, 1,9-dimethoxybenzo(rst)phenanthro(10,1,2-cde)pentaphene, 9-(2-butyloctyloxy)-18-(2-propyloctyloxy)benzo(rst)phenanthro(10,1,2-cde)pentaphene and 5-(2-octyldecyloxy)-10-(2-octyldodecyloxy)anthra(9,1,2-cde)benzo(rst)pentaphene.    EXAMPLE - A solution of triisopropylsilyl acetylene (2 g) in tetrahydrofuran (25 ml) was cooled to 0 degrees C and treated with n-butyllithium (4 ml, 2.5 M in hexanes). The mixture was stirred at 60 degrees C for 30 minutes, then cooled to room temperature. The mixture was treated with isoviolanthrone (1 g) and stirred at 60 degrees C for 2 hours. The mixture was cooled to room temperature and treated with a solution of stannous chloride (2 g) in water (4 ml) and concentrated aqueous hydrochloric acid (1 ml). The mixture was stirred at 60 degrees C for 30 minutes, cooled to room temperature, treated with methanol (50 ml), and filtered. The filter cake was washed with methanol until the washings were colorless. The dried solid was purified by flash chromatography (silica gel, toluene) and then recrystallized from chloroform to give (benzo(rst)phenanthro(10,1,2-cde)pentaphene-1,9-diylbis(ethyne-2,1-diyl))bis(triisopropylsilane) (140 mg, 8% yield).
TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The metal atom or the metal in a metal ion is a transition metal of 6th group or 4th period of periodic table, preferably manganese, iron, cobalt, nickel, copper and/or platinum.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The macrocyclic compound (I) is preferably of formula (II).R7,R8=H or monovalent;or two or more R7+R8=ring;Q5=group of formula (i)-(iii);R9,R10,R11,R12=R7;or two or more R9+R10=ring;X3=nitrogen or trivalent group;X4=-O-, -S-, -NR-;R=R';or R11+R12=ring;andAr=optionally substituted bivalent aromatic group. Preferred Definitions:    P1+P2=aromatic heterocyclyl;and    or P3+P4=nitrogen-containing aromatic heterocyclyl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: Nanoparticles are inorganic particles, detritus or sphere. Metal particles in porous metal catalyst component is platinum, ruthenium, rhodium, osmium, iridium, rhenium, cobalt, nickel, titanium, copper, zirconium, strontium, zinc, indium, lanthanum, vanadium, molybdenum, tungsten, niobium, magnesium, aluminum, yttrium, scandium, samarium, palladium and/or gallium Preferred Property: The size of pores in porous carbon structure is 100 nm to 1 mu m.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The carbon precursor is obtained by performing addition polymerization of monomer chosen from phenol-formaldehyde, phenol, furfuryl alcohol, resorcinol-formaldehyde, 1-20C aliphatic hydrocarbon or aromatic hydrocarbon formaldehyde, sucrose, glucose, xylose, divinyl benzene, cyclonitrile, polyvinylchloride, vinylacetate, styrene, methacrylate methylmethacrylate, ethylene glycol dimethylacrylate, urea, melamine and/or linear compound (CH2=CRR'), in presence of an acid catalyst, basic catalyst and polymerization initiator.R,R'=alkyl or 1-20C aryl.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The anode material comprises carbon paper, carbon cloth, carbon fiber, carbon nano tube, felt and graphite rod. The cathode material comprises carbon cloth, carbon paper and cathode material loaded catalyst.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal layer comprises tungsten, rhenium, iridium, tantalum, ruthenium or molybdenum. The metal oxides comprise aluminum oxide, silicon dioxide or titanium dioxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The nanostructure is made of silicon material. The etching gas contains sulfur hexafluoride gas. The ARC contains silicon nitride and is formed via plasma-enhanced chemical vapor deposition.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The deposition gas contains octafluorocyclobutane gas.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal oxide comprises a transition metal, a mixed metal oxide and a dopant. The metal oxide is titanium oxide, tin oxide, zinc oxide, tungsten oxide, niobium oxide, tantalum oxide, barium titanate, strontium titanate, zinc titanate or copper titanate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The quantum dots has a 1s absorbance peak in an absorbance spectrum of the quantum dots, and a linker that chemically attaches the quantum dots to the metal oxide film. The linker has the property of preserving the 1s absorbance peak in the absorbance spectrum for the quantum dots attached to the linker. (I) comprises carboxylic acid, acetic acid, phosphonic acid, phosphonate, boronic acid, boronate, sulfonate and thiol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The seed substrate is formed of aluminosilicate glass, barium borosilicate glass, aluminoborosilicate glass, sapphire and quartz.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The gas barrier layer is obtained by injecting ion into layer containing hydrolysis and dehydration product of tetrafunctional organosilane compound by plasma ion-implantation. Preferred Composition: The ion is chosen from ion of hydrogen, oxygen, nitrogen, argon, helium, xenon, krypton, silicon compound, and hydrocarbon. The transparent conductor layer contains electroconductive metal oxide. The electroconductive metal oxide is zinc-based oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The tetrafunctional organosilane compound is tetra-(1-10C)alkoxysilane.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The organic layer comprises organic electroluminescent material.
TECHNOLOGY FOCUS - METALLURGY - The affinity adjustment unit is formed using titanium and titanium alloy. The substrate is formed using molybdenum. The metal contains copper, indium, gallium and selenium.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The raw material contains (in %mass) silica (50-80), alumina (2-20), boric oxide (30-15), sodium oxide (1-20), mixture (0-3) of strontium oxide and barium oxide, lithium oxide (0-1), potassium oxide (0-10), mixture (0-5) of magnesium oxide, calcium oxide, strontium oxide and barium oxide (0-5), mixture (0-5) of zirconium oxide and titania. The mass ratio of lithium oxide and potassium oxide with respect to sodium oxide is 0-0.5.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The electrically insulating layer is made of aluminum oxide, pseudoboehmite and bayerite.    TECHNOLOGY FOCUS - METALLURGY - The metal substrate layer is formed of aluminum or an aluminum alloy.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The coating agent is selected from a group comprising acrylonitrile, vinyl acetate and methacrylic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The barrier layer and anti-reflective layer are formed of silicon oxide, silicon nitride or aluminum oxide. Nitrogen thiosulfate is used as oxidizer and silver nitrate, hydrogen peroxide or sodium hydroxide is used as catalytic agent in the electroless treatment process and selective products removing step is performed in a solution containing hydrofluoric acid and hydrogen peroxide.
TECHNOLOGY FOCUS - METALLURGY - The N-type dopant is selected from a group consisting of boron (B), aluminum (Al), gallium (Ga) and indium (In).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The reagent includes hydrofluoric acid, nitric acid, or phosphoric acid.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Cell: In the PEC, the electrically conducting substrate is fluorine-doped tin oxide on glass. The primary amines have a size less than the size of tri-n-octylphosphine oxide. The electrolyte is selected from alkali metal sulfides. The amine is a primary amine has the formula RNH2 where R is selected from propyl, butyl, pentyl, hexyl, heptyl, allyl, phenyl, and benzyl. The oxide is a transition metal oxide. The metal oxide film has more than two layers comprising a light absorbing layer and a light scattering layer.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: In the article, the metal oxide comprises a transition metal, a mixed metal oxide, and a dopant. The metal oxide is selected from titanium oxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), tungsten oxide (WO3), niobium oxide (Nb2O5), tantalum oxide (Ta2O5), barium titanate (BaTiO3), strontium titanate (SrTiO3), zinc titanate (ZnTiO3), and copper titanate (CuTiO3). The quantum dots are selected from cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, indium arsenide, indium phosphide, indium antimonide, and zinc cadmium selenide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Article: In the article, R is selected from propyl, butyl, pentyl, hexyl, heptyl, allyl, phenyl, and benzyl. Alternatively, the article comprises: a substrate; a metal oxide film on the substrate, quantum dots on the metal oxide film, the quantum dots further comprising ligands attached to the quantum dots, the ligands being primary amities having a size less than the size of tri-n-octylphosphine oxide. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The forming step comprises: providing a predetermined thickness in the bi-axial strain and then providing the misfit dislocations to reduce the biaxial stain towards the relaxed state, where the predetermined thickness is a critical thickness between a strained state and the relaxed state which is substantially relaxed bi-axially; and depositing aluminum-gallium-nitride material of formula (AlxGa(1-x)N) (II) at a thickness of less than 100 nm, and annealing (II) at 1000-1400 degrees C. The semi-polar surface orientation is within 5 degrees of one of (43-71), (32-51), (21-31), (31-42), (41-53), (81-98) and (30-34), where the semi-polar surface orientation provides for formation of the relaxed state of the thickness. The method further comprises: subjecting the semi-polar surface to a roughening process before formation of the epitaxial layer (803); forming a second epitaxial (I) layer on a back side of the substrate; removing the substrate to form a free-standing (I) layer, crystal, wafer or boule; and fabricating a LED or a laser diode on at least a portion of epitaxial (I) layer. Preferred Components: The substrate comprises bulk gallium nitride, and is patterned (801), having a pitch of 10-1000 nm. The thickness of the epitaxial (I) layer is greater than 1 mu , preferably 10 mu . The epitaxial (I) layer has a threading dislocation density of below 109 cm-2, a stacking fault density of less than 103 cm-1 and a strain of less than 0.1%, and the layer comprises at least two epitaxial (I) layers and/or at least one epitaxial layer having a graded composition. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electrolyte support comprises lanthanum strontium gallium magnesium oxide (La(0.9)Sr(0.1)Ga(0.8)Mg(0.2)O(3)). The perovskite comprises strontium iron molybdenum oxide (Sr(2)Fe(1.5)Mo(0.5)O(6- delta )). The nickel comprises nickel nitrate solution.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step of forming the rear surface protective layer comprises forming a first protective layer on the rear surface of the substrate; and forming a second protective layer on the first protective layer. Each of the first and second protective layers comprises aluminum oxide, silicon nitride, silicon oxide, or silicon cyanide. The method further comprises forming an antireflection layer (230) on the emitter layer before forming the rear surface protective layer. The antireflection layer comprises silicon nitride and/or silicon oxide. The substrate is a silicon substrate doped with p-type impurity; and the emitter layer is a silicon layer doped with n-type impurity.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step of forming a light absorbing layer further includes performing heat treatment using hydrogen selenide at 500-600 degrees C.    TECHNOLOGY FOCUS - METALLURGY - Preferred Method: The mixed metal layer is made of copper, indium, and gallium. The first electrode is made of reflective conductive metal; and the second electrode is made of transparent conductive metal.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The first and second doping layers include silicon oxides, which include different conductive impurities. The substrate is N-type silicon wafer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The converter material comprises a pigment material and/or a material having a core-shell structure. The pigments are inorganic pigments, preferably from doped zinc sulfide or strontium aluminate based luminophores and/or quantum dots (especially cadmium selenide), which can dispersed by the use of stabilizing agents (surfactants; physisorbed or chemisorbed onto the surface of the particle).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The pigments can be organic pigments, such as rhodamine, perylene-based dyes, and/or squaraines.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The addition amount of aromatic compound is 0.5-20 wt.% with respect to solid amount of polyamic acid. Preferred Definitions:    R1=tetravalent organic group of formula (i), (ii), (iii), (iv) or (v);    R2=bivalent biphenylene group of formula (vi);    R3=1-16C (halo)alkyl or halo;and    X=direct bond or amide bond.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The epoxy resin is chosen from bisphenol-A epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, biphenyl-type epoxy resin and naphthalene-type epoxy resin. The content of epoxy resin with respect to 100 parts mass of polyimide resin is 10-100 parts mass. The polyimide resin further has benzophenone structure and tolylene structure, and does not have alkylene structure. The polyimide resin is obtained by reacting polyisocyanate having biphenyl skeleton, and acid anhydride. The polyisocyanate having biphenyl skeleton is polyisocyanate derived from tolidine diisocyanate, or tolidine diisocyanate. The molar ratio of triazine in the condensate (c1) and condensate (c2) is 30% or more. The triazine is chosen from melamine, acetoguanamine and benzoguanamine. The content of phenol resin with respect to 100 parts mass of polyimide resin is 10-500 parts mass. Preferred Properties: The polyimide resin has biphenyl-skeleton content of 25-40 %mass, logarithmic viscosity of 0.2-0.7 dl/g. The viscosity of the epoxy resin is 12 Pa.second or less. The cured material of the thermosetting resin composition has linear expansion coefficient of is 50 ppm/ degrees C or less.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The refractive-index regulator is a (meth)acrylate compound having fluorene structure, of formula (II), or a bismaleimide compound of formula (III).R11-R16,R21-R24=H or methyl;q,r=1 or 2;andR25,R26=H, methyl or ethyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The transparent composite sheet has a light transmittance of 85% or more at 550 nm, a mean coefficient of linear expansion of 20 ppm/ degrees C or less at 50-200 degrees C, and a thickness of 25-200 mu m. The glass fiber is E-glass.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The flake-shaped metal powder has average particle diameter of 1-100 mu m, average thickness of 0.01-5 mu m and aspect ratio of 5-1000. Preferred Composition: The flake-shaped metal powder contains aluminum. The metal oxide film contains silica. Preferred Process: The surface of flake-shaped metal powder is coated by polymer film.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The heat-conductive resin composition contains flake-shaped metal powder (5-50 %mass) and resin (50-95 %mass). The polymer film contains polymer obtained by polymerizing oligomer or monomer having one or more polymerizable double bonds.
TECHNOLOGY FOCUS - METALLURGY - The compound type light absorption layer contains copper, indium, zinc, tin, molybdenum and selenium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconductor layer comprises silicon, germanium and/or carbon. A buffer layer (42) containing zinc, sulfur, oxygen and/or silicon is formed on the insulating layer.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The insulating layer comprises plastic or glass. The plastic is polyimide resin, polyamidoimide resin, and/or polysilsesquioxane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The nanoparticles comprise: an element consisting of group IB, MB, IMA, IVA, VA and VIA elements; and inorganic materials consisting of silicon, amorphous silicon, copper, copper selenide, copper sulfide, copper telluride, copper indium sulfide, copper indium selenide, copper indium telluride, copper iron sulfide, copper indium gallium selenide, copper zinc tin sulfide, zinc oxide, zinc sulfide, zinc selenide, zinc telluride, zinc indium oxide, zinc gallium oxide, zinc aluminum oxide, zinc indium selenide, zinc gallium selenide, zinc aluminum selenide, zinc tin oxide, zinc tin sulfide, zinc tin selenide, zinc tin telluride, zinc tin gallium oxide, zinc tin gallium sulfide, zinc tin gallium selenide, zinc tin gallium telluride, tin oxide, tin sulfide, indium oxide, indium tin oxide, indium phosphide, indium sulfide, indium selenide, indium oxide, indium arsenide, cadmium selenide, cadmium telluride, cadmium sulfide, cadmium-tellurium selenide, cadmium oxide, lead selenide, lead sulfide, gallium oxide, gallium arsenide, gallium indium arsenide, gallium phosphide, iron sulfide, aluminum oxide, molybdenum trioxide, molybdenum dioxide, molybdenum trisulfide, molybdenum disulfide, molybdenum triselenide, molybdenum diselenide, nickel oxide and/or germanium. The surface modifier comprises cadmium chloride salts, zinc chloride salts or cadmium bromine salts.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The nanoparticle dispersion contains additives consisting of salts, fillers, ligands and/or dopants. The chemical treatment comprises contacting the layer of nanoparticles with a solution comprising chemical treatment agents consisting of salts, fillers, ligands and/or dopants.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of flake-shaped metal powder, fibrous carbon material and resin in the heat conductive resin composition is preferably 10-40 %mass, 2-20 %mass and 40-88 %mass, respectively. The fibrous carbon material is carbon nanotubes. The flake-shaped metal powder contains aluminum. Preferred Properties: The fibrous carbon material has average fiber diameter of 3-500 nm and mean fiber length of 0.5 nm to 20 mu m. The flake-shaped metal powder has average particle diameter of 1-100 mu m, and average thickness of 0.01-5 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The recycled abrasive slurry, abrasive slurry and alkali compound are mixed, and the pH is adjusted to 7.5-8. Preferred Property: The electric conductivities of abrasive slurry is less than 50 mu S/cm, preferably less than 20 mu S/cm. Preferred Composition: The abrasive slurry contains polar organic liquid with free abrasive particles. The alkali compound is hydroxide of alkali or alkaline-earth metals e.g. sodium hydroxide, lithium hydroxide, calcium hydroxide, and magnesium hydroxide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polar organic liquid contains polyethylene glycol, polypropylene glycol, copolymers of polyalkylene oxides and polyalkylene glycol, and abrasive particles chosen from at least one of aluminum oxide, silicon carbide, boron carbide and gallium carbide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The grid electrode contains transparent conductive material containing aluminum-doped zinc oxide, fluorine-doped tin oxide, gallium-doped zinc oxide and/or boron-doped zinc oxide, or metal. Preferred Process: The grid electrode is integrally formed with electrode layer (39). A metal layer (m1) including nickel, silver and/or platinum is provided on metal layer (m2) including gold. Preferred Property: The thickness ratio of grid electrode and electrode layer (39) is 0.5-3.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The crosslinked component is obtained by heating cyclic olefin copolymer in presence of radical polymerization initiator. Preferred Composition: The cyclic non-conjugated diene-derived repeating unit (B) is 5-vinyl-2-norbornene or 8-vinyl-9-methyl-tetracyclo(4.4.4.0.12.5.17.10)-3-dodecene, preferably 5-vinyl-2-norbornene. The cyclic olefin-derived repeating unit (C) is bicyclo(2.2.1)-2-heptene or tetracyclo(4.4.4.0.12.5.17.10)-3-dodecene. The radial polymerization initiator is dibenzyl compound. Preferred Properties: The crosslinked component has maximum loss-tangent value of 0.6 or less at 30-300 degrees C, measured using solid viscoelasticity measurement, and storage elastic modulus of 0.1 GPa or more at 260 degrees C. The ratio of storage elastic modulus of crosslinked component at 260 degrees C with respect to storage elastic modulus at 30 degrees C is 0.05 or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The difference of maximum and minimum value of silicon distribution curve is 5 atomic% or less. The atomic ratio of carbon in layer (G) is 67 atomic% or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The sulfate content of the composition Z3 is adjusted by adding sulfuric acid or its salt to the composition Z3. The partially removal of the reduction product in process step (iii) is carried out by treating the composition Z2 with an ion exchanger. Preferred Components: The composition Z3 comprises 100-500 (preferably 100-200) ppm of sulfate content. The salt of the sulfuric acid is an alkali salt and/or ammonium salt of sulfuric acid. The alkali salt of the sulfuric acid is sodium sulfate. The composition Z3 comprises less than 20 ppm of iron. The internal transmission of the coating in the layer of the composite is greater than 80%. The roughness of the layer is less than 20 nm.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The thiophene monomer is 3,4-ethylenedioxythiophene (EDT) and the polythiophene is poly (3,4-ethylenedioxythiophene) (PEDOT). The composition Z1 also contains a polyanion. The polyanion is a polystyrene sulfonic acid (PSS). The composition Z3 is a PEDOT/PSS dispersion. The composition Z3 comprises: a viscosity of 60-250 mPas; a conductivity of at least 400 S/cm; and a PEDOT/PSS content of 1-5 wt.%. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The removal of the reduction product is carried out by treating the composition Z2 with an ion exchanger. Preferred Components: After completion of the step (iii) the content of non-polymerized thiophene monomer is 3-50 (preferably 5-30) ppm. The thiophene monomer is 3,4-ethylenedioxythiophene (EDT) and the polythiophene is poly (3,4-ethylenedioxythiophene) (PEDOT). The composition also contains a polyanion, which is a polystyrene sulfonic acid (PSS). The composition Z3 comprises PEDOT/PSS dispersion. The molar ratio of oxidant:thiophene monomer is less than 2.33:1 (a one electron/molecule of oxidizing agent), and less than 1.16:1 (a two electron/molecule of oxidizing agent). The composition contains less than 500 ppm of inorganic anions. The composition comprises conductivity of at least 500 S/cm, and a PEDOT/PSS content of 0.8-2 wt.%. The internal transmission of the layer is greater than 80%. The conductivity of the layer is at least 500 S/cm. EXAMPLE - Glass flask (3 l) was equipped and connected with a stirrer, a material inlet, a gas inlet tube and a temperature control thermostat comprising water (2050 g), aqueous polystyrene solution (500 g) and a 10% iron(III) sulfate solution (5.6 g). The stirrer rotated at 50 rpm. The temperature was adjusted to 18 degrees C. About the gas inlet tube, nitrogen was added through the solution for 30 minutes. Subsequently, ethylenedioxythiophene (10.13 g) inserted through the material inlet. Subsequently, sodium (19.5 g) was added to the material inlet. The mixture was stirred for 18 hours at 18 degrees C. After completion of addition the reaction mixture into a plastic cup over, and inorganic salts were removed as 500 ml of a cation and an anion exchanger (290 ml) was added. The mixture was stirred for 2 hours and filtered off the cation. Finally, the mixture through a 10 micron filter was added to give polythiophene-containing composition.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The amount of recycled abrasive slurry, new abrasive slurry, and alkali compound being mixed is adjusted to provide a pH and ion content of the abrasive slurry of any possible combination of pH ranges of 6-9, 6-8, 6-7, 6.5-9, 6.5-8, 6.5-7, 7-9, 7-8, 7-7.5, 7.5-9, 7.5-8, 8-9, and 8-8.5, with one of the electric conductivities of the abrasive slurry of less than 50 mu S/cm, less than 45 mu S/cm, less than 40 mu S/cm, less than 35 mu S/cm, less than 30 mu S/cm, less than 25 mu S/cm, and less than 20 mu S/cm. The abrasive slurry is a polar organic liquid with free abrasive particles. The abrasive particles are aluminum oxide (corundum), silicon carbide, boron carbide, and/or gallium carbide. The alkali compound is hydroxide of alkali or alkaline earth metal, such as sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, and magnesium hydroxide. The wafer is mono-, micro- or poly-crystalline with a thickness of 100-250 mu m, and is made of silicon or gallium arsenide. The abrasive slurry mixture comprises polyethylene glycol 200, silicon carbide particles in size distribution F800 and/or F600, and alkali (10-500 ppmw potassium hydroxide).    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polar organic liquid is polyethylene glycol, polypropylene glycol, copolymers of various polyalkylene oxides, and polyalkylene glycol.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The impurity of glass layer is removed on silicon chip, chemically cleaned, impurities enriched layer is removed, cleaning liquid containing oxidant and silicon dioxide silicon dissolving agent is subjected to wet chemical cleaning. Preferred Component: The silicon oxidant is silica dissolve agent containing nitric acid, sulfuric acid, hydrogen peroxide, potassium permanganate, potassium chromate or acetic acid. The oxidant is ammonium fluoride, ammonium bifluoride, hydrofluoric acid or ammonium hydroxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconductor is titan oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The photoelectric conversion layer is formed on the semiconductor by absorbing a dye after absorbing the compound. The charge transporting layer comprises a p-type compound semiconductor. Preferred Definitions:    R1 = tert-butyl group, i-propyl group or triethylmethyl group;    X = cyclohexane ring (optionally substituted);    R2 = single bond; and    B1 = carboxyl group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The anti-reflecting layer on the doped region, is made of silicon nitride, silicon oxide, titanium dioxide, zinc oxide, stannic oxide and magnesium dioxide.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Arrangement: The packing coke is coke and/or graphite. The shelf consists of graphite. The laminate is arranged side by side in one row between the electrodes (2) provided at both sides of the furnace in the longitudinal direction. Each laminate is arranged in a direction in which the main surface of carbon board and shelf face the electrode.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The indium-gallium-selenium film is plated with cadmium sulfide having thickness of 0.05 microns. The zinc oxide is coated with transparent conductive oxide aluminum. The zinc oxide aluminum is plated with nickel on surface. The nickel is equipped with aluminum film. The aluminum film is plated with nickel protecting layer of protecting aluminum. The protection nickel is plated with soda-lime glass cover.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Disclosed): The nitrogen-containing aromatic compound of formula (II) is prepared by reacting bromine-containing compound of formula (III) and nitro group-containing compound of formula (IV) to obtain indene-containing compound of formula (V) and condensing indene-containing compound (V). Preferred Definitions:    X=N-A'.    SPECIFIC COMPOUNDS - 80 Nitrogen-containing aromatic compounds are disclosed e.g. 5-biphenyl-3-yl-6-(3-carbazol-9-yl-phenyl)-5,6-dihydro-indolo(2,3-b)indole of formula (Ia), 5-(3-carbazol-9-yl-phenyl)-6-(4,6-diphenyl-(1,3,5)triazin-2-yl)-5,6-dihydro-indolo(2,3-b)indole, 5-(3-carbazol-9-yl-phenyl)-6-dibenzofuran-2-yl-5,6-dihydro-indolo(2,3-b)indole, 5,6-bis-(3-carbazol-9-yl-phenyl)-5,6-dihydro-indolo(2,3-b)indole and 5-methyl-6-octyl-3-phenyl-5,6-dihydro-indolo(2,3-b)indole.    EXAMPLE - 5-(3-(9H-Fluoren-9-yl)-phenyl)-5,6-dihydro-indolo(2,3-b)indole (in g) (2.4), 3-bromo-biphenyl (1.4), copper iodide (0.2), tribasic potassium phosphate (3.1), trans-1,2-cyclohexanediamine (1.1) and 1,4-dioxane (30 ml) were mixed and heated at 120 degrees C. The reaction mixture was precipitated, filtered, distilled, cooled and purified to obtain 5-biphenyl-3-yl-6-(3-carbazol-9-yl-phenyl)-5,6-dihydro-indolo(2,3-b)indole (1.2), with yield of 37%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The titanium dioxide particles are further baked at 300-900 degrees C until free moisture content is 1 %mass or less. The aggregate of titanium dioxide particles is pulverized to obtain titanium dioxide particles having average primary particle diameter of 5 mu m or less. Preferred Composition: The water repellent and lipophilic agent contains silicone compound, metal soap and/or fluorine compound.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Properties: The water repellent and lipophilic film has critical surface tension of 25-40 dyn/cm, oil-absorption amount with respect to di-2-ethylhexyl phthalate/titanium dioxide particles is 18 g or less and content angle with respect to water is 90 degrees or more.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The paint resin is fluororesin.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The intermetallic compound phase is dispersed in oxide phase as microcrystal grain with average particle diameter of 50 mu m or less. Preferred Composition: The content of intermetallic compound phase in the sputtering target is 0.1-6 %mass.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The average particle diameter of copper powder is 1-300 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The surface of semiconductor is etched using nitrogen fluoride gas and argon gas.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compounds: The conductive layer comprises indium-tin oxide, tin oxide, or indium-tin-zinc oxide. The conductive layer has a thickness of 1-200 nm. The window layer comprises conductive material (II). An oxide layer comprising sodium-doped metal oxide is arranged on the back side electrode layer. The oxide layer has a thickness of 1-200 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The laminated structure further has an inorganic base layer (14) formed on surface of base layer. The inorganic base layer is silicon oxide layer or titanium oxide layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The light scattering portion is formed of copper oxide, cobalt oxide, iron oxide, molybdenum oxide, manganese dioxide, chromium oxide, nickel oxide, iron titanate, manganese containing titanium dioxide, antimony containing titanium dioxide, manganese containing iron oxide, cadmium sulfide, cobalt aluminum oxide, cadmium selenium sulfide, copper chromium oxide, ferronickel oxide, nickel chrome oxide, cobalt aluminum oxide, cobalt chrome oxide, iron manganic acid, cobalt iron oxide, copper chromium oxide, zinc chromium oxide, galvanized iron oxide, iron chromium oxide, metal-copper manganese oxide, copper manganese chromium oxide, sodium alumiosilicate, alumino lithium silicate, alumino potassium silicate, sodium-aluminosilicate sulfide, alumino lithium-silicate sulfide, aluminum potassium silicate sulfide, and titanium dioxide.    TECHNOLOGY FOCUS - METALLURGY - The side surface of solar cell module is formed of tin, nickel, aluminum, zinc, copper, silver, and gold.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The base metal particles are comprised of copper, nickel, lead, tin, iron, indium, zinc, cobalt and/or bismuth.
TECHNOLOGY FOCUS - METALLURGY - The gallium arsenide layer comprises metallic particles including noble metals selected from a group consisting of ruthenium, palladium, silver, osmium, iridium, platinum and gold.
TECHNOLOGY FOCUS - METALLURGY - The reflective layer is formed of aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The nano protrusion portion is made of transparent conductive oxide. The transparent conductive oxide is chosen from indium-tin-oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium oxide, niobium-strontium-titanium oxide, lanthanum-strontium-cobalt oxide, lanthanum-strontium-manganese oxide and strontium-ruthenium oxide.
Preferred Definitions:    X=group of formula (vi);    Y'=groups of formula (vii) or (viii);    R6,R7=R1;    R8-R10=single bond or 1-10C monovalent organic group;and    v,w,x=0-4.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The sewage is an organic wastewater biochemical treatment. The power generating microorganism is a domesticated mixed microbial flora. The nitrate pollution in underground water nitrate nitrogen concentration is 20-100 mg/liter. Preferred Method: The optimized power generating condition is at 25-40 degrees C and pH value of 8-10. The dissolved oxygen concentration is less than 0.2 mg/liter. The optimized growth of denitrifying microorganism is carried out at 25-35 degrees C, pH value of 8-10, and dissolved oxygen concentration of 0.1-0.5 mg/liter.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The binder resin which has structural unit containing oxazoline group further has structural unit containing hydroxyl group. The molar ratio of structural unit which has oxazoline group in binder resin is 40-60%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The sodium of surfactant is diffused within the light absorption layer. The surfactant is made of sodium palmitate, sodium lauryl sulfate, alpha sulfonic acid sodium, and alpha olefin sulfonic acid sodium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic acid is sulfonic acid compound and/or aromatic hydrocarbon compound with sulfonic group. The aromatic hydrocarbon compound is hydroxyl or methyl group. The sulfonic acid compound is acetylene hydrocarbon, alkane, olefin sulfonic acid compound, methanesulfonic acid, ethanesulfonic acid, vinyl sulfonic acid, allyl sulfonic acid, acetylene group sulfonic acid, alkyne group sulfonic acid, p-methyl benzene sulfonic acid, methyl benzene sulfonic acid, methyl benzene sulfonic acid, benzene sulfonic acid, m-benzene sulfonic acid or o-hydroxy benzene sulfonic acid. The concentration of organic acid in the electrolyte is 1.5-3 mol/L.
TECHNOLOGY FOCUS - ENVIRONMENT - Preferred Method: The operating temperature of the membrane distillation system is 40-50 degrees C. Preferred Components: The sewage is nitrogenous sewage for biochemical treatment, where the total nitrogen concentration is more than 20 mg/l.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The silicon is silicon carbide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The PAC layer is graphene or graphite. The substrate is a copper, copper-coated silicon, fused silica or silicon carbide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The COF layer comprises a COF comprising COF-5, TP-COF (consisting of pyrene and triphenylene functionalities), NiPc-PBBA (nickel phthalocyanine-6,18,30,42-tetrakis(4-phenylene)-5,7,17,19,29,31,41,43-octaoxa-12,24,36,48-tetraaza-6,18,30,42-tetrabora-50-nickelahexadecacyclo(23.23.3.1(13,23).1(37,47).0(2,10).0(4,8).0(11,49).0(14,22).0(16,20).0(26,34).0(28,32).0(35,51).0(38,46).0(40,44).0(50,52).0(50,53))tripentaconta-1,3,8,10,12,14(22),15,20,23(53),24,26(34),27,32,35,37(52),38(46),39,44,47-nonadecaenyl) COF, ZnPc-Py (tri-tert-butylpyridinotribenzotetraazaporphinatozinc) COF, ZnPc-DPB (zinc phthalocyanine-trans,trans-1,4-diphenyl-1,3-butadiene) COF, ZnPc-NDI COF (comprising naphthalenediimide diboronic acid and zinc octahydroxyphthalocyanine) or ZnPc-PPE (poly(phenylethanone)-zinc phthalocyanine) COF. The COF layer: has a thickness of 5 nm to 1 mu and an average grain size of at least 5 unit cells; has pores with a diameter of 1-6 nm; and comprises at least 3 molecular layers. In the method: the COF layer has at least one covalent bond comprising an imine bond, a hydrazone bond, a triazine bond or a boronate ester bond; the subunit compound comprises at least two catechol moieties; and the multifunctional linker compound comprises at least two boronic acid moieties.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The piezoelectricity nanostructures comprise zinc oxide, zinc sulfide, zinc stannate, barium titanate and/or mixtures of the inorganic compounds. The water is disintegrated into oxygen and hydrogen gas.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The glass frit further comprises (in weight%) silver-containing oxide (0.1-10), lead oxide (70.1-90), silicon dioxide (4.9-12), boric oxide (4.9-11), alumina (0-5), magnesium oxide (0-0.2), zinc oxide (0.5-5), titanium dioxide (0-5), strontium oxide (0-5), barium oxide (0-5), zirconium oxide (0-5), ferric oxide (0.3-0.5), chromium (III) oxide (0.2-0.5), cobalt (II) oxide or cobalt oxide (0.1-0.4), manganese dioxide (0.3-0.5), conductive powder and additive. The additive is silver.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The silver-containing oxide is silver oxide, silver pyrovanadate, silver tetramolybdate, silver-tungsten oxide, silver-zinc oxide, silver-tin oxide, silver-iron oxide, silver permanganate, silver-copper oxide and silver-cadmium oxide. The content of silver-containing oxide is 0.1-10 weight%. The front electrode contains vanadium, molybdenum, tungsten, zinc, tin, cadmium, iron, manganese or copper. Preferred Properties: The average particle diameter of additive is less than that of the conductive powder.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The tubular target consists of molybdenum and its alloy, tungsten and its alloy, and chromium and its alloy.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The concentration of sodium fluoride, deionized water and hydrochloric acid is 3.5-4.5 g/L, 35-45 ml and 37 wt.%, respectively. The addition amount of glass powder with respect to 1 L of roughening solution is 50 g. The concentration of sodium chloride solution and tin chloride solution is 300-340 g/L and 83.33-116.67 g/L, respectively. The volume ratio of sodium chloride solution and tin chloride solution, is 5:3. The content of 37 wt.% hydrochloric acid is 62-88 ml. The mass ratio of silver nitrate and glass powder is 1.5-2:5. The reducing agent is ascorbic acid solution. Preferred Property: The diameter of glass powder is 0.1-5 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The thickness of indium-gallium nitride layer is 8-16 nm. The thickness of barrier layer gallium nitride is 3-8 nm. The indium-gallium nitride and gallium nitride are intrinsic film. The concentration of carrier is 1x 1016-1x 1017/cm3. The thickness of p-gallium nitride layer is 50-100 nm. The hole concentration of p-gallium nitride layer is 1x 1017-1x 1018/cm3. The thickness of n-gallium nitride layer is 50-100 nm. The electronic concentration of n-gallium nitride layer is 1x 1018-1/asterisk1019/cm3. Preferred Components: The p-gallium nitride ohmic contact electrode is nickel/gold alloy or tin-indium oxide material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The precursor is titanium acetate or titanium isopropoxide. The hydrolyzed precursor is treated with nitric acid. An indium tin oxide layer or fluorine doped tin oxide layer is provided on the substrate before forming the photocatalytic layer.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The titanium dioxide obtained is dispersed in solvent chosen from water, ethanol, acetone, diethylene glycol, formamide, alpha -terpineol, ( gamma )-butyrolactone, methylcellosolve or propylmethyl cellosolve.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Content of ZrO2 is 2-5 mol.%. Content of NiO is 0.2-0.5 mol.%. Content of Cr2O3 is 0.2-0.5 mol.%. Content of Co2O3 is 0.2-0.5 mol.%. Content of Al2O3 is 4-10 mol.%. Content of ZnO is 4-15 mol.%. Content of CaO is 12-16 mol.%. Average coefficient of thermal expansion of glass powder is 10.4-11.5x 106/k. Preferred Method: The method comprises curing glass powder at 550-600 degrees C for 0.5-2 hours, and crystallizing at 800-850 degrees C for 0.5-2 hours.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Solvent comprises butanone, ethanol, cyclohexanone, n-butanol, butyl acetate and/or deionized water.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: Sealing pad comprises (wt.%): glass powder (40-60) dispersant (0.1-2), plasticizer (2-8), binder (2-5), and solvent (30 -50). Preferred Components: Dispersant comprises polyethylene imine and/or triethanolamine. Plasticizer comprises dibutyl phthalate, polyvinyl alcohol 200 and/or olein. Binder comprises polyvinyl butyral, glycerin, ethyl cellulose, and/or methyl cellulose.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The oxide sinter does not contain tin oxide phase and strontium oxide phase. The strontium is contained only in the perovskite type oxide phase. The transparent oxide conductive film has n-type buffer layer containing zinc oxide as main component.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The total amount of sodium oxide and magnesium oxide is 21-25 mol%. The total amount of sodium oxide and potassium oxide is 18 mol% or less. The total amount of sodium oxide, potassium oxide and magnesium oxide is 24-28 mol%. The total amount of silica, alumina, magnesium oxide, calcium oxide, zirconia, sodium oxide and potassium oxide is 0.66 mol% or more, which satisfies the relation: 0.029x SiO2+0.021x Al2O3+0.016x MgO-0.004x CaO+0.016x ZrO2+0.029x Na2O+0x K2O-2.002. Preferred Properties: The glass has viscosity of 102 dPa.second or less at 1650 degrees C and surface pressure shrinkage stress surface is 550 MPa or more. The thickness of compressive-stress layer formed in the glass surface is 30 mu m or more. The thickness of glass plate is 0.4-1.2 mm.
TECHNOLOGY FOCUS - POLYMERS - Preparation (Disclosed): Triazole compound of formula (II) and derivative corresponding to structural unit (D') are copolymerized in the presence of a metal complex to obtain alternating copolymerized polymer.X=fluoro, chloro, bromo, iodo, MgCl, MgBr, MgI, B(OR)2 or SnR. Preferred Definitions:    R=1-12C alkyl or substituted alkyl;    n=3-20;    D'=structural unit of formula (a) or (b);and    R1-R3=monovalent hydrocarbyl or substituted hydrocarbyl, preferably 1-12C alkyl or substituted alkyl.    EXAMPLE - 4,7-Bis(5-bromothiophen-2-yl)-2-octyl-2H-1,2,3-benzotriazole (in mg) (100) and 2,2'-(9,9-bis(n-octyl)fluorene-2,7-diyl)-bis(4,4,5,5-tetramethyl-(1,3,2)dioxa-borolan) (113) were added to toluene (8 mL), heated and refluxed at 115 degrees C for 10 minutes. Tetrakis triphenylphosphine palladium (8) was added to reaction mixture, 35% tetraethylammonium hydroxide aqueous solution (0.2 mL) and water (0.2 mL) were added and heat-stirred at 115 degrees C. Bromobenzene (60 mu l) was added and refluxed at 115 degrees C for 1 hour. Phenylboronic acid (58) was added and heat-refluxed for 12 hours. Then, the reaction solution was cooled to room temperature, precipitated, separated by filtration, and red solid was extracted. Methanol was added and reprecipitated, after concentrating and dissolving in chloroform. Precipitate was filtered and vacuum-dried, and alternating-copolymerized polymer (42) was obtained as red powder at yield of 31%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The quaternary alloy sputtering target has density of 5.5 g/cm3 or more. Preferred structure: The structure of quaternary alloy sputtering target has indium- and gallium-containing aggregation phase having mean diameter of 100 mu m or less. Preferred Composition: The quaternary alloy sputtering target has oxygen concentration of 200 or less weight ppm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Alkali solution is sodium hydroxide water solution, sodium carbonate water solution, sodium bicarbonate water solution or tetraethyl ammonium hydroxide aqueous solution.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): (I) is prepared by in the oxygen free environment, mixing pentaborane compound of formula (A), dibromo anthracene compound of formula (B), and dibromo thiophene compound of formula (C), and performing Suzuki reaction with catalyst, alkali and first solvent for 72 hours to obtain material (I). Preferred Method: Second solvent is tetrahydrofuran, ether, methyl chloride, chloroform or ethyl acetate. Catalyst is mixture of organic palladium or organic palladium and organic phosphorus ligand. Organic palladium is Pd (PPh3)4, Pd (OAc)2, Pd2 (dba)3 or Pd (PPh3)2C12. Organic phosphorus-containing ligand is P(o-Tol) 3. Mol ratio of organic palladium to organic phosphorus ligand is 1:20. First organic solvent is toluene, ethyl alcohol methyl ether, tetrahydrofuran, ether, in dichloromethane, trichloromethane or ethyl acetate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The mold release promoter comprises calcium, strontium, and/or barium.
TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The material of glycogen is chosen from sugar, sucrose, treacle, cane juice and very-refined sugar. The liquid mixture contains potassium carbonate. The water-containing liquid, powder-form carbon-containing material and powder-form glycogen are mixed to form liquid mixture. The particles size of powder form carbon-containing material is 100 mu m or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The heat treating step is conducted in an inert or reductive atmosphere. The process further comprises separating the graphene sheet from the graphitizing catalyst in an acid solution. The thickness of the graphene sheet is controlled by adjusting the amount of the polymer that is disposed upon the graphitizing catalyst. The heat-treatment is selectively applied to the graphitizing catalyst. The graphitizing catalyst is in intimate contact with the substrate. Preferred Components: In the method the substrate is silicon. The graphene sheet has a width and a length each of greater than or equal to 1 mm, preferably 1-1000 mm. The polymer is a self-assembling polymer. The graphitizing catalyst is in form of a sheet. The graphene substrate further comprises a graphitizing catalyst layer interposed between the substrate and the graphene sheet. In the graphene substrate, the substrate is silicon. EXAMPLE - Nickel was deposited on a silicon substrate (3 cmx 3 cm) on which silicon dioxide (100 nm) was coated by sputtering to obtain a nickel thin film. Oleic acid was dissolved in chloroform to obtain oleic acid solution (1 mg/ml). The oleic acid solution (50 mu l) was added to a Langmuir-Blodgett device having water to obtain a self assembled monolayer (SAM). The SAM layer was polymerized by UV radiation (254 nm). The obtained oleic acid SAM was transferred to the silicon substrate. Then, the oleic acid coated substrate was heated in a vacuum at 60 degrees C for 12 hours and dried. The dried oleic acid coated substrate was heat-treated in a furnace under a nitrogen atmosphere at 500 degrees C for 1 hour to obtain prepare a substrate (area of 3 cmx 3 cm) and a single-layered graphene sheet. Then, the substrate including the graphene sheet was immersed in hydrochloric acid (0.1 M) for 24 hours to remove the nickel thin film to obtain separated graphene sheet.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The organic electroluminescent element has an electron injection layer containing nitrogen-containing ring derivative between cathode and light-emitting layer, and an electron carrying layer containing organic-electroluminescent-element material provided between cathode and light-emitting layer. Preferred Process: A reducing dopant is added to interface of cathode and organic thin-film layer.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Composition: The light-emitting layer contains organic-electroluminescent-element material as host material, or phosphorescence-emitting material comprising ortho-metalated complex of iridium, osmium and platinum. Preferred Definitions:    at least one of A1 and A2=H, optionally substituted pyridine ring, pyrimidine ring or triazine ring;and    X1,X2=optionally substituted phenylene, biphenylene or terphenylene.    SPECIFIC COMPOUNDS - 120 Indolocarbazole compounds are disclosed e.g. 11-(4-(2,6-diphenyl-pyrimidin-4-yl)phenyl)-12-phenyl-11,12-dihydro-11,12-diaza-indeno(2,1-a)fluorene of formula (Ia), 11-(4-(4,6-diphenyl-(1,3,5)triazin-2-yl)phenyl)-3,8,12-triphenyl-11,12-dihydro-11,12-diaza-indeno(2,1-a)fluorene, 11-(4-(4,6-diphenyl-(1,3,5)triazin-2-yl)phenyl)-12-phenyl-11,12-dihydro-11,12-diaza-indeno(2,1-a)fluorene, 11-(4-(4,6-diphenyl-pyrimidin-2-yl)phenyl)-12-phenyl-11,12-dihydro-11,12-diaza-indeno(2,1-a)fluorene and 11-(4-(2,6-diphenyl-pyridin-4-yl)phenyl)-12-phenyl-11,12-dihydro-11,12-diaza-indeno(2,1-a)fluorene.    EXAMPLE - 11-Phenyl-11,12-dihydro-11,12-diaza-indeno(2,1-a)fluorene and 4-(4-bromophenyl)-2,6-diphenylpyrimidine were reacted in presence of toluene, sodium tert-butanoate, tri-tert-butylphosphine tetrafluoroborate and tris(dibenzylideneacetone)dipalladium to obtain 11-(4-(2,6-diphenyl-pyrimidin-4-yl)phenyl)-12-phenyl-11,12-dihydro-11,12-diaza-indeno(2,1-a)fluorene having molecular weight of 638.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The antioxidant is chosen from (2,4-di-tert-butyl phenyl) phosphite ester, stearyl pentaerythritol phosphite ester, tetra (beta-(3, 5-di-tert-butyl4-hydroxyl phenyl) propionic acid) pentaerythritol ester, beta-(4-hydroxyl-3, 5 di-tert-butyl phenyl) propionic acid n-octadecanol ester, orthophosphorous acid tri (nonyl benzene and nonyl mixed ester), tri (nonyl phenyl) phosphorous acid ester or mixtures of the organic compounds. The silane coupling agent is chosen from gamma-amino propyl triethoxysilane, gamma-glycidyl ether oxypropyl trimethoxy silane, vinyl triethoxy silane, 3-aminopropyl trimethoxy silane, vinyl trimethoxy silane, or mixtures of the silane. The crosslinking agent is a peroxide chosen from 2, 5-dimethyl-2, 5-di (tert-butyl-peroxy) hexane, 1,1 (tertbutyl peroxide), 3, 3, 5-trimethylcyclohexane, tert-butyl peroxy 2-ethylhexyl carbonate or mixtures of the peroxides. The light stabilizer is a hindered amine chosen from di (I-octyloxy-2, 2, 6, 6-tetramethyl-4-piperidiny) diester, 0, 2, 6, 6-(tetramethyl-4piperidinyl) sebacate, 2, 2, 6, 6-1 piperidine alcohol ester or mixtures of the hindered amines.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - The cathode material is one of metal lithium sheet, graphite carbon or conductive carbon black. The membrane is one of polyethylene or polypropylene. The electrolyte is LiPF6.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The solar battery component is silicon based thin film solar cell component comprising compounds such as copper indium gallium selenide (CIGS), cadmium telluride (CdTe) and crystalline silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Silver and silicon wafer are utilized to manufacture the printing pattern.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal nanoparticle is a silver nanoparticle. The metal oxide nanoparticle is an indium tin oxide nanoparticle. The nanocarbon is a carbon nanotube, a graphene, and/or a graphite nanoparticle.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The photosensitive layer is formed from a photosensitive coating comprising an organic compound with at least one photosensitive functional group, a solvent, and optionally an additive. The organic compound is selected from cinnamate, coumarin and its derivatives, a polyimide, and/or an acrylate. The acrylate is selected from 2-hydroxyethyl methacrylate, tripropylene glycol diacrylate, and/or polyurethane acrylate. The additive is a photo initiator, a photo sensitizer, and/or a photoacid generator. The difference between the high water contact angle and the low water contact angle is 5-40 degrees . The high water contact angle region is 25-75% of the total area of the photosensitive layer.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The cinnamate is selected from polyvinyl cinnamate, methyl 4-hydroxy cinnamate, and/or polyvinyl 4-methoxy cinnamate. The conductive layer comprises a conductive material selected from conductive polymer, a metal nanoparticle, a metal oxide nanoparticle, and/or a nanocarbon. The conductive polymer is selected from a polyaniline, a polythiophene a polyacetylene, and/or a polypyrrole. The conductive coating has a surface tension of 15-40 dyne/cm. The radiation light is an ultraviolet light. The dosage of the irradiation light is 100-800 mJ/cm2 during irradiating the photosensitive layer. The photosensitive coating comprises an organic compound with at least one photosensitive functional group, a solvent, and optionally an additive. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The p-type dopant includes metallic zinc dopants, dimethyl zinc, diethyl zinc, metallic magnesium dopants, cyclopentadienyl magnesium, and/or carbon tetra chloride or carbon bromide. The n-type dopant includes hydrogen sulfide, sulfur, silane, disilane, hydrogen selenide, and/or selenium. The GaAs containing precursor is (N methyl )2GaAs(tert-butyl).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The amount of niobium in the composite oxide is 5-20 at%, preferably 6-8 at%, with respect to the sum total content of titanium and niobium. The precious metal catalyst is a platinum catalyst. The amount of precious metal catalyst is 10-50 wt.% with respect to the support material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The mask layer is a layer containing microparticles (105). The photocatalyst layer comprises particles of semiconductor material, and titanium dioxide. The metal is silver or palladium.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: Microparticles are polymer latex particles.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The film comprises oxygen and zinc. The film comprises cadmium-sulfide-oxygen of formula: CdS1-yOy, where y is 0.01-0.5.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The gasket is made of graphite and/or carbon particles.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The water-soluble polyvinyl polymer is polyvinyl alcohol, polyvinyl pyrrolidone and/or polyacrylic acid.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The average particle diameter of zinc oxide powder and calcium oxide powder is each 0.1-10 mu m.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Reactive functional group is hydroxyl group.    TECHNOLOGY FOCUS - POLYMERS - Preferred Compositions: Weight average molecular weight of polymer (B) is 50000-500000.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The gas comprises at least one of gallium chloride, indium chloride, and aluminum chloride. The substrate comprises at least one of gallium nitride, indium nitride, aluminum nitride, indium gallium nitride, indium gallium arsenide, indium gallium phosphide, aluminum gallium nitride, aluminum gallium arsenide, aluminum gallium phosphide, aluminum indium gallium nitride, aluminum indium gallium arsenide, and aluminum indium gallium phosphide. The III-V semiconductor material has thickness of less than 1000 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The elongated structure comprises silicon dioxide. The substrate comprises silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The stirring is performed at not greater than 5 minutes. Preferred Components: The reaction solution comprises hydrochloric acid of at least 2M. The silicate is at least one of tetramethyl orthosilicate, tetraethyl orthosilicate, tetrapropyl orthosilicate, tetrabutyl orthosilicate or sodium silicate. The micelle forming agent is a triblock copolymer. The salt is at least one of ammonium fluoride, potassium chloride or sodium sulfate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The alkane is at least one of heptane (preferred), pentane, hexane, octane, nonane, decane, undecane or dodecane. The particles are rod like with pores running along the long axis of the particles. EXAMPLE - P123 (RTM: Triblock copolymer of (ethoxy)20-(isopropoxy)70-(ethoxy)20) (2.4 g) and ammonium fluoride (0.028 g) were dissolved in hydrochloric acid solution (80 ml). The hydrochloric acid concentration in the solution was varied between 1.37-1.98 M. The pH of the solution was thus varied between 0.8-0.9. The mixture was stirred at 20 degrees C until the polymer was dissolved. Heptane or decane respectively with an alkane to P123 (RTM: Tri block copolymer of (ethoxy)20-(isopropoxy)70-(ethoxy)20) molar ratio of 280 was premixed with tetraethyl orthosilicate (5.5 ml) and then added to the micellar solution. The synthesis was kept under vigorous stirring for 4 minutes and then under static conditions for 5 minutes to 3 hours. After the reaction, the solution was transferred to a Teflon (RTM: Polytetrafluoroethylene) flask for hydrothermal treatment at 80-130 degrees C for 6-120 hours. The material was then filtered and washed with distilled water and dried at 100 degrees C over night. Finally, the material was calcinated at 550 degrees C for 5 hours with a temperature rate of 10 degrees C/minute to obtain mesoporous silica (SBA-15).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The back roll contains porous ceramic.    TECHNOLOGY FOCUS - POLYMERS - Preferred Film: The patterned film is resin film comprising electroconductive substance.
TECHNOLOGY FOCUS - POLYMERS - Preferred: The material in gas barrier layer is perhydro polysilazane. The base material layer contains polysulfone-type resin polyarylate-type resin and/or alicyclic hydrocarbon resin. Preferred Film: The gas barrier film is obtained by obtained by injecting ion chosen from hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, krypton, silicon compound and hydrocarbon, into gas barrier layer containing polysilazane compound. Preferred Property: The gas barrier film has haze value of 8% or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The primer layer contains silicon-containing compound. The gas barrier layer comprises material containing oxygen atom (60-75%), nitrogen atom (0-10%) and silicon atom (25-35%). Preferred Process: The ion chosen from hydrogen, nitrogen, oxygen, argon, helium, neon, xenon and krypton is ionized, and injection of ion is carried out by plasma ion-implantation. Preferred Property: The film density of surface-layer portion is 2.4-4 g/cm3.    TECHNOLOGY FOCUS - POLYMERS - Preferred Layer: The gas barrier layer is layer obtained by injecting ion into a layer containing polysilazane-type compound. Preferred Composition: The polysilazane-type compound is perhydropolysilazane. Preferred Property: The molded material has water-vapor-permeation rate at 40 degrees C and relative humidity of 90% of 0.50 g/m2/day or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The volume average particle diameter of boron nitride particles is 0.1-300 mu m. The content of boron nitride is 10-300 parts mass with respect to 100 parts mass of binder.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The binder is a silicone resin or a norbornene resin. The composition is free of titanium oxide. The average particle diameter of melamine cyanurate particles is 0.5-4 mu m. The content of melamine cyanurate particles is 5-180 parts mass with respect to 100 parts mass of binder.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The alkoxysilane or chlorosilane has cyclic ether group(s) chosen from epoxy group, 3,4-epoxy cyclohexyl group and oxetanyl group.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The silicone-resin mixture is obtained using 10-100 wt.% of trifunctional alkoxysilane or trifunctional chlorosilane, or 10-100 wt.% of raw material containing chlorosilane compound or raw material containing alkoxysilane compound. The silicone-resin mixture is polysiloxane mixture having weight average molecular weight of 1500-30000. The nanofiber-reinforced transparent composite material further contains hardening agent and polymerization initiator. The weight ratio of silicone-resin mixture and nanofiber is 10:90-90:10. The composite material is in the form of plate shape or film. Preferred Properties: The nanofibers have diameter of 5-50 nm and aspect ratio of 100-1000.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: A gas consisting of oxygen, water vapor, carbon dioxide, carbon monoxide, and/or ozone is used for oxidation. The intermediate contact layer consists of silicon oxycarbide of formula: SiOxCy, where x is greater than 0 and less than 2.2 and y is greater than 0 and less than 2.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The organic silicon compound is hexamethyldisiloxane, tetraethylsiloxane, tetramethyldisiloxane, tetramethylcyclotetrasiloxane, triethylsilane, trimethylsilane, tetramethylsilane, tetraethoxysilane, tetramethoxysilane, hexamethyldisilazane and/or tetramethyldisilazane.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The base material comprises polyethylene terephthalate, polyethylene naphthalate, or polyamide-type film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The polycrystalline silicon-manufacturing apparatus has plasma electrode as anode and silicon as cathode.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The organic compound of surface layer is provided with the titanium alkoxide, the titanium alkoxide compound, the amine compound, the titanium alkoxide compound, the carboxyl group and the carbonyl group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The thermal radiation material further has secondary corrugated structure having larger irregular period than the size of primary corrugated structure in metal impregnated carbon-type substrate. The secondary corrugated structure is sub-micrometer. The metal impregnated carbon-type substrate is metal impregnated graphite substrate. Preferred Process: The metal removal process is wet etching process carried out using an acid or gas capable of reacting with the metal. The nano primary corrugated structure is manufactured by plasma etching process. The secondary corrugated structure is formed on the surface of metal impregnated carbon-type substrate, after metal removal process and before formation of primary corrugated structure.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): A dibromo material of formula (II) and 2,5-bi(4-tributyltin-phenyl)thiophene derivative of formula (III) are subjected to Stille coupling reaction in presence of catalyst and an organic solvent under oxygen-free environment to obtain perylene tetracarboxylic acid diamide organic semiconductor material (I). Preferred Composition: The content of catalyst is 0.01-20 mol% with respect to total content of perylene tetracarboxylic acid diamide organic semiconductor material (I). The catalyst is palladium or mixture of organic palladium organic phosphor ligand. The organic palladium is tris(dibenzylideneacetone)dipalladium(0), tetrakis (triphenylphosphine)palladium and/or bis(triphenylphosphine)palladiumchloride. The organic phosphor ligand is tri(o-tolyl)phosphine. The molar ratio of organic palladium with respect to organic phosphor ligand is 1:1-20. The organic solvent is tetrahydrofuran, glycol dimethyl ether, dioxane, N,N-dimethyl formamide, benzene and/or methylbenzene. The molar ratio of dibromo material with respect to 2,5-bi(4-tributyltin-phenyl)thiophene derivative is 1:1-2:1. Preferred Condition: The Stille coupling reaction is carried out at 50-1300 degrees C for 24-72 hours. Preferred Process: After performing Stille coupling reaction, the reactant mixture is purified by adding to methanol, conducting suction filtration, washing with methanol, drying, obtaining colloid containing organic semiconductor material, dissolving in methylbenzene, adding obtained methylbenzene solution of organic semiconductor material to aqueous solution of diethyldithio amino sodium, heating at 80-1000 degrees C, performing column chromatography, leaching with chlorobenzene, eliminating organic solvent of chlorobenzene by decompression, and extracting by acetone soxhlet.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): Alkoxyethanol of formula: HO-CH2-CH2-O-R2, halogenating reagent of formula: X-CH2CH2-O-R2, sodium salt of thiol of formula: R1-SH, and sulfide compound of formula: R1-S-CH2-CH2-OR2 are processed to obtain sulfone compound (I).X=halo. Preferred Definitions:    R1,R2=ethyl, methyl, propyl or isopropyl.    (i) When R1 is methyl, then R2 is propyl or isopropyl; (ii) When R1 is ethyl, then R2 is isopropyl; (iii) When R1 is propyl, then R2 is methyl, ethyl, propyl or isopropyl; and (iv) When R1 is isopropyl, then R2 is ethyl, propyl or isopropyl.    SPECIFIC COMPOUNDS - 24 Sulfone compounds (I) e.g. methyl(isopropoxyethyl)sulfone of formula (IA), (methoxyethyl)methyl sulfone, methyl(propoxyethyl)sulfone, ethylsulfone(methoxyethyl) and (propoxyethyl)propyl sulfone are disclosed.    EXAMPLE - Thionyl chloride (82.3 g), N,N-dimethylformamide (1.84 g), 2-isopropoxy ethanol (62.6 g) and ultrapure water (55.6 g) were stirred for 1 hour, and the organic layer was fractionated. The obtained reaction liquid was added to methyl mercaptan sodium aqueous solution (129.4 g), maintained at 50 degrees C for 15 hours, and obtained organic layer was cleaned using dilute sulfuric acid. Hydrogen peroxide solution (80.7 g) was added to obtained organic layer and maintained at 40 degrees C to obtain methyl(isopropoxyethyl)sulfone (IA) (61.2 g).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preparation: No preparation method is given. Preferred Composition: The concentration of platinum, cobalt and gold on the support is 1-90 (preferably 20-80) wt.%. EXAMPLE - Ru(III)-chloride (12.0 g) was taken in 1,2-propylene glycol (500 ml) in a reaction flask. After stirring for 30 minutes at 300 rpm, sodium hydroxide solution solution was added to obtain the desired pH value of 5.5. The arabic gum (1.75 g) was added to the reaction mixture. After 30 minutes mixing, carbon black asteriskasteriskTMasteriskasteriskVulcan XC 72R asteriskasterisk/TMasteriskasterisk (RTM: carbon carrier) (7.0 g) was added to the mixture. After 1 hour of mixing, the content of the flask was heated up to 150 degrees C, then platinum precursor precursor was added. The chloroplatinic acid (18.4 g) dissolved in 100 ml 1,2-propylene glycol was slowly added into the flask with a dropping funnel, and final temperature was maintained for 30 minutes. The slurry was then cooled to 150 degrees C. Then cold deionized water (275 ml) was added for 100 degrees C. Hydrochloric acid solution was added to attain a pH value of 0.8 and the temperature was maintained 100 degrees C for 120 minutes to hydrolyze the arabic gum. Stirring was continued for additional 30 minutes. When the system cooled to room temperature, the solids were allowed to settle down and the solvent was decanted. The solid residue was washed with an ethanol-water solution (500 ml) for 10 minutes. Finally, the solid residue was filtered under vacuum and was transferred to a desiccator for drying and worked up to give platinum ruthenium/C alloy catalyst.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The thickness of primary buffer layer and secondary buffer layer is each 10-50 Angstrom .
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Film: The thickness of antireflection film is 50 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The sacrificial material is selected from polysilicon material, silicon-germanium, semiconducting material (III-V).
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Components: The microbial fuel cell is cylindrical in shape. The cation exchange membrane is tubular. The anode chamber has a volume of at least 1 l. The microbial fuel cell further comprises: additional catalyst forming a layer on the conductive material; and a second restrictor (defining a second opening through which water flows into or out of the anode chamber) in contact with the cation exchange membrane. The anode chamber comprises bacteria for oxidizing organic compounds. The microbial fuel cell: has an associated buoyancy that causes the microbial fuel cell to float. The buoy comprises an electrically powered device. The microbial fuel cell is electrically coupled to the electrically powered device, and provides electricity to the electrically powered device.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The anode comprises: carbon, which is granular carbon having a size of 3-10 mm; and a conductive current collector. The cathode comprises a conductive material and a catalyst to facilitate reduction of oxygen at the cathode, where: the conductive material and the catalyst are supported by an exterior surface of the cation exchange membrane, and an interior surface of the cation exchange membrane defines the anode chamber; or the catalyst is supported by the exterior surface of the cation exchange membrane, and the conductive material forms a layer on the catalyst. The conductive material comprises carbon fibers, and a metal coating supported by the carbon fibers. The catalyst comprises platinum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Zinc solution is zinc nitrate hexahydrate solution, zinc sulfate heptahydrate solution or zinc acetate solution.
TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The difference of the refractive index of axis parallel to the stretching direction of dispersed phase and the refractive index of axis parallel to the stretching direction of continuous phase is 0.05 or less. Preferred Composition: The dispersed phase contains polyethylene naphthalate-type resin or acrylic resin and rubber gum as main component, and the continuous phase contains acrylic resin and rubber gum or polyethylene naphthalate-type resin as main component, or dispersed phase contains polyethylene naphthalate-type resin, and continuous-phase contains thermoplastic resin comprising (in %mass) formed by copolymerizing vinyl cyanide monomer (20-40), aromatic vinylic monomer (40-80) and other monomer (0-20) and having weight average molecular weight of 150000-230000 and average refractive index of 1.545-1.575, or polyethylene naphthalate-type resin. The acrylic resin is copolymer containing aromatic vinyl compound monomer unit, (meth)acrylic-ester-type monomeric unit and carbonyl group-containing unit of formula (III).X=0 or N-R;andR=H, or alkyl, aryl or cycloalkyl (all optionally substituted).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The carbide is hydrogenated silicon and/or germanium carbide and oxycarbide is hydrogenated silicon and/or germanium oxycarbide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The metal material is metal microparticles or metal nanowire.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The gas chosen from hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, and krypton is ionized.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The gas-barrier layer contains polysilazane compound. The hydroxyl-containing polymer contains 10 mol% or more of repeating unit containing hydroxyl group. The polysilazane compound is perhydro polysilazane. Preferred Properties: The molded product has water-vapor permeation rate of 0.1 g/m2/day at 40 degrees C and 90% relative humidity, and total light transmittance of 90% or more, measured based on JISK7361-1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The treatment process includes a heat treatment process or a plasma treatment process, and the atomic layer deposition process and treatment process are conducted at less than 600 degrees C. The substrate is exposed to a purge gas during a purge process. Preferred Component: The purge gas is an inert gas. The plasma comprises a hydrogen plasma, a nitrogen plasma, or an argon plasma.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The first reactant gas is silicon tetrachloride. The second reactant gas is trimethylaluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The gas supplied in cavity comprises at least one of hydrogen, helium, argon, or nitrogen. It can be cryogenic gas, room temperature gas, or heated gas. The source with rapidly varying thermal power flux rate is pulsed laser, preferably yttrium aluminum garnet or yttrium lithium fluoride laser. The first and second particles comprise hydrogen, deuterium, or helium. The first particles are provided at dosage of less than or equal to 8x 1016/cm2. The second particles are provided at dosage of less than or equal to 5x 1016/cm2.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The bulk material comprises at least one of single crystalline silicon or germanium ingot, polycrystalline silicon tile, multi-crystalline silicon tile, or compound semiconductor ingot or tile.
TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The adhesive is coated on upper and lower surfaces of separator edges and is of same material as gasket, preferably consisting of fluorine rubber, polymer resin, or liquid silicone resin. It is applied to thickness of 10-100 mu m. It can be screen adhesive formed by screen printing.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The second solvent comprises a hydrogen species, nitrogen species, at least one trace metal, and dissolved mineralizer. The first solvent is ammonia (NH3).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The portion of the wavelength converting layer located at the distance of 5 nm or shorter from the end portion of the metal layer is made of silicon dioxide, silicon nitride, silicon oxynitride, silicon oxyfluoride, anisotropic conductive film, silicon oxide, aluminum oxide, magnesium oxide, yttrium oxide or rutherfordium dioxide.    TECHNOLOGY FOCUS - METALLURGY - The metal layer is made of aluminum, silver, gold, copper, platinum, nickel, cobalt, chromium and titanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: Titanium oxide, aluminum oxide and/or tungsten oxide are incorporated into the layer. Preferred Substrate: The substrate is monocrystalline or polycrystalline thick film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconductor is oxide semiconductor which consists of titanium oxide, zinc oxide, strontium titanate, nickel oxide, tin oxide, vanadium oxide, tungsten oxide, or indium oxide. The metals are gold, platinum, or palladium. The sacrificial agent is hydrogen peroxide solution. Preferred Parameter: The metal nanoparticle functions as catalyst, and substrate functions as catalyst carrier.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The conductive polymer is polyaniline. Preferred Process: The polymerization is performed in presence of sacrificial agent.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The oxide semiconductor is titanium oxide, zinc oxide, strontium titanate, nickel oxide, tin oxide, vanadium oxide and/or indium oxide. The metal contained in metal nanoparticles is gold, silver, platinum, palladium, iridium and/or rhodium. The sacrificial agent is hydrogen-peroxide solution or metal salt.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The conductive polymer is polyaniline.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The component (C) has specific surface area of 25-180 m2/g. Preferred Composition: The content component (C) is 5-50 parts mass with respect to 100 parts weight of component (A), component (B) and component (C). The component (C) is silica.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The component (A) has 25-40 %mass of biphenyl structure, and logarithmic viscosity of 0.2-0.7 dl/g. The component (B) has viscosity of 12 Pa.seconds or less at 150 degrees C. The cured material of the resin composition has linear expansion coefficient of 50 ppm/ degrees C or less. Preferred Composition: The component (B) is chosen from bisphenol-A epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, biphenyl-type epoxy resin, and naphthalene-type epoxy resin. The content of component (B) is 10-100 parts mass with respect to 100 parts mass of component (A). The component (A) is polyimide resin having benzophenone structure, polyimide resin having tolylene structure and/or polyimide resin which does not have the alkylene structure. The thermosetting resin composition further contains melamine resin (D).
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The content of biphenyl skeleton in the polyimide resin is 25-40 %mass, and the logarithmic viscosity of polyimide resin is 0.2-0.7 dl/g. The epoxy resin is bisphenol A epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, biphenyl type epoxy resin, and/or naphthalene type epoxy resin. The content of epoxy resin is 10-100 parts mass with respect to 100 parts mass of polyimide resin. The polyimide resin further has a benzophenone structure and a tolylene structure. The polyimide resin does not have an alkylene structure. The polyimide resin is obtained by reacting a polyisocyanate having a biphenyl skeleton, and an acid anhydride. The polyisocyanate is tolidine diisocyanate or is derived from tolidine diisocyanate. The alkoxylated melamine resin is methoxylated methylolmelamine resin. The content of alkoxylated melamine resin is 3-100 parts mass with respect to 100 parts mass of polyimide resin. The resin composition further contains boric acid or boric acid ester. Preferred Properties: The epoxy resin has a viscosity of 12 Pa.second or less at 150 degrees C. The cured material of the thermosetting resin composition has a linear expansion coefficient of 50 ppm/ degrees C or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The inorganic salt is aluminum salt, ammonium salt, or hydrazine salt. Preferred Definitions:    a=0.
TECHNOLOGY FOCUS - POLYMERS - Preferred Compound: The chlorine content of protonated optionally substituted polyaniline is 0.6 weight% or less. The protonated optionally substituted polyaniline is optionally substituted polyaniline protonated with organic sulfonic acid or its salt. The organic sulfonic acid or its salt is sulfosuccinic acid derivative or compound of formula (I).M=H, organic free radical or inorganic free radical;m'=valence of M;R112,R113=hydrocarbyl or -(R114O)r-R115;R114=hydrocarbyl or silylene;R115=H, hydrocarbyl or R1163Si-;R116=hydrocarbyl;andr=1 or more.The high molecular compound has sulfonic acid group, phosphoric acid group, phosphonic acid group, carboxy group or hydroxyl group. The high molecular compound contains ester-containing repeating unit of formula (A) and/or (B), and (C). The acid value of high molecular compound is 1 mg/g or more. The weight average molecular weight of high molecular compound is 2000-200000. The oxygen-containing organic solvent is 1-12C alcohol. The electroconductive composition further contains low molecular acidic compound having sulfonic acid group, phosphoric acid group, phosphonic acid group or carboxy group. The low molecular acidic compound is naphthalenesulfonic acid or alkylnaphthalene sulfonic acid.Ra-Rc=H or 1-6C alkyl;Rd=alkyl;A1+=sodium ion, ammonium ion or of formula (a);andR'=H, alkyl, alkenyl, alkynyl or hydroxy alkyl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The magnetically sensitive particles are magnetically sensitive metals or metal oxides. The magnetically sensitive metal oxide is chosen from iron, cobalt, ferric oxide and magnetite, preferably ferric oxide. The non-magnetically sensitive nanoparticles are carbon nanoparticles.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The surfactants are chosen from anionic, cationic, nonionic, zwitterionic, amphoteric and ampholytic surfactants. The anionic surfactants are sodium dodecylbenzenesulfonate. The cationic surfactants are trimethylammonium bromide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The monomer (m1) has two or more amino groups. The aromatic moieties comprises six-membered 4C aromatic ring, and each six-membered aromatic ring is provided with one amino group and electron-donating substituent is provided on aromatic carbon atom adjacent to carbon atom to which at least one of two amino groups is attached. The monomer (m1) or monomer (m2) has metal-bonding-ring group, spiro group or chiral carbon atom. Preferred Process: The monomer (m2) has different structure with respect to monomer (m1), and monomer (m2) has one or more aromatic moieties and at least two amino groups. The monomer (m2) is contacted with monomer (m1), and formaldehyde or source of methylene, or formaldehyde or source of methylene and oligomer derived from monomer (m1).    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The polymer is formed by step-growth polymerization in presence of acid. The polymeric bicyclic diamine is reacted with an alkyl or benzyl halide or polymeric bicyclic diamine is reacted with alkyl dihalide or xylene dihalide, to obtain polymeric quaternary ammonium cationic polymer. The polymeric quaternary ammonium cationic polymer with counter anion (a1) is formed, and counter anion (a1) is exchanged with respect to counter anion (a2). The polymer is formed at interface between two immiscible liquids, or surface of solid or macroporous substrate. Preferred Property: The polymer has average degree of polymerization of 10 or more. Preferred Composition: The polymer comprises aromatic moiety-containing compound of formula (I) or quaternary ammonium cation derivative of aromatic moiety-containing compound (I).A,B'=carbon atom derived from aromatic moiety (m1);andX,Y'=carbon atom derived from aromatic moiety (m2).
TECHNOLOGY FOCUS - POLYMERS - Preferred Compound: The organic polymer compound is a multidentate ligand. The functional group is ionic group. The particles of organic polymer compound have fine hole on the surface, and average particle diameter of 1-100 mu m. The amount of functional group introduced with respect to organic polymer compound is 0.1-7 mequivalent/g.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The thermoplastic resin composition further contains chemical admixture.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The alkaline solution is aqueous solution of sodium hydroxide, aqueous solution of sodium carbonate, aqueous solution of sodium bicarbonate or aqueous solution of tetraethyl ammonium hydroxide. The volume of the alkaline solution is 2-20 times of molar quality of 2,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan)-yl-9,9-dialkyl fluorene.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: 2,7-Dibromo-9,9-dialkyl fluorene of formula (3) is reacted with n-butyl lithium in a solvent (S2) at -70 degrees C to -85 degrees C in the molar ratio of 1:2-4, in water-free and oxygen-free environment. Bis(pinacolato) diboron or 2-i-propoxy-4,4,5,5-tetramethyl-1,3,2-dioxaborolan is added and condensation reaction is carried out for 12-48 hours to obtain 2,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan)-yl-9,9-dialkyl fluorene. Preferred Composition: The solvent (S2) is tetrahydrofuran, ethyl ether, dichloromethane, trichloromethane or ethyl acetate. The molar quantity of the 2-i-propoxy-4,4,5,5-tetramethyl-1,3,2-dioxaborolan or bis(pinacolato)diboron is 2-4 times of 2,7-dibromo-9,9-dialkyl fluorene. The molar quantity of the catalyst is 0.01-20% of 2,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan)-yl-9,9-dialkyl fluorene. The catalyst is organopalladium or mixture of organopalladium and organic phosphorus ligand. The organopalladium is tris(dibenzylideneacetone)dipalladium(0), palladium tetrakis(triphenylphosphine), palladium diacetate or palladium bis(triphenyl phosphine)dichloride. The organophosphorus ligand is tri(o-tolyl)phosphine or tricyclohexyl phosphine. The molar ratio of organopalladium and organic phosphorus ligand is 1:1-20. The organic solvent (S1) is toluene, ethylene glycol dimethyl ether, tetrahydrofuran, ethyl ether, dichloromethane, trichloromethane or ethyl acetate.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The hardening agent is trifunctional or more than trifunctional polyisocyanate.
TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The glass transition temperature of norbornene-type ring-opened copolymer hydride is 100-200 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The halo is chloro, bromo or iodo. The phosphono is coupled to the dipyrromethane by a linking group.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The linking group is alkyl, aryl, alkylaryl, or alkylarylalkyl groups. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: Preparing trihalosilane further comprises: (iii) contacting the silicon- containing copper catalyst contacted with the hydrogen halide in step (ii) with the hydrogen gas and the silicon tetrahalide at a temperature of from 500 to 1400 degrees C to reform the silicon-containing copper catalyst comprising at least 0.1% (w/w) silicon; and (iv) contacting the reformed silicon-containing copper catalyst with the hydrogen halide at a temperature of from 100 to 600 degrees C to form a trihalosilane. It also comprises repeating steps (iii) and (iv) at least one time; and purging prior to the contacting reformed silicon-containing copper catalyst with the hydrogen halide in step (ii) or (iv). Purging is conducted with argon or silicon tetrachloride. Step (ii) is conducted in the presence of hydrogen. The method also comprises recovering the trihalosilane, where the residence time of the hydrogen and silicon tetrahalide is from 1 to 10 seconds and the residence time of the hydrogen halide is from 1 to 10 seconds. Contacting in step (ii) is conducted at a pressure from 7 to 1000 kilopascal (gauge pressure) (kPag). Step (i) is conducted at a pressure from 7 to 1000 kPag. Preferred Components: The copper catalyst further comprises a support, where the support is activated carbon. The trihalosilane has the formula HSiX3, where X is fluoro, chloro, bromo, or iodo. Hydrogen halide is HCl, the silicon tetrahalide is SiCl4, and the trihalosilane is HSiCl3. Preferred Composition: The copper catalyst comprises from 0.1 to 35% (w/w) of the mixture and the mixture comprises copper, gold and magnesium. The silicon-containing copper catalyst comprises from 1 to 5% (w/w) of silicon. The mole ratio of hydrogen to silicon tetrahalide in step (i) is from 20:1 to 5:1. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The concentration of cadmium-containing solute is 0.001-1 mol, and the concentration of sulfur-containing solute is 0.001-1 mol. The cadmium-containing solute includes cadmium chloride, and the sulfur-containing solute includes thiourea.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The solution comprises alcohol(s) in a concentration of 5-95 vol.%. The alcohol is methanol, ethanol, and/or isopropyl alcohol.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): An aldehyde-type compound of formula (II) and carboxyl group-containing compound of formula (III) are reacted to obtain indanone derivative (I). SPECIFIC COMPOUNDS - 48 Indanone derivative (I) e.g. 2-((5-(4-(diphenylamino)phenyl)thiophen-2-yl)methylidene)-1,3-dioxo-2,3-dihydro-1H-indene-5-carboxylic acid of formula (IA), 2-((5-(4-(bis(4-methylphenyl)amino)phenyl)thiophen-2-yl)methylidene)-1,3-dioxo-2,3-dihydro-1H-indene-5-carboxylic acid, 2-((5-(4-(bis(4-tert-butylphenyl)amino)phenyl)thiophen-2-yl)methylidene)-1,3-dioxo-2,3-dihydro-1H-indene-5-carboxylic acid, 2-((5-(4-(bis(4-(2,4,4-trimethylpentan-2-yl)phenyl)amino)phenyl)thiophen-2-yl)methylidene)-1,3-dioxo-2,3-dihydro-1H-indene-5-carboxylic acid and 2-((5-(4-(bis(4-methoxyphenyl)amino)phenyl)thiophen-2-yl)methylidene)-1,3-dioxo-2,3-dihydro-1H-indene-5-carboxylic acid are disclosed.    EXAMPLE - Acetic acid solution (2 ml) of 3-hydroxy-2-(methoxycarbonyl)-1-oxo-1H-indene-6-carboxylic acid (0.58 mmol) and 5-(4-(diphenylamino)phenyl)thiophene-2-carbaldehyde (0.58 mmol) were stirred at 100 degrees C for 1 hour, and evaporated under reduced pressure at 70 degrees C to obtain 2-((5-(4-(diphenylamino)phenyl)thiophen-2-yl)methylidene)-1,3-dioxo-2,3-dihydro-1H-indene-5-carboxylic acid (IA) (0.24 g).
TECHNOLOGY FOCUS - POLYMERS - Preparation (Claimed): Preparation of (A) comprises coupling monomers with each other, and/or with monomers of the formula (R4-Ar3-R5), in an aryl-aryl coupling reaction. Preferred Components: (A) has a structure of formula (-((Ar1-U1-Ar2)x-(Ar3)y)n-) (II) or (R4-((Ar1-U1-Ar2)x-(Ar3)y)n-R5) (IIa).Ar1-Ar3 = aryl or heteroaryl (both optionally substituted);Ar1, Ar2 = single bond, preferably thiophene-2,5-diyl, thiazole-2,5-diyl, selenophene-2,5-diyl, furan-2,5-diyl, thieno(3,2-b)thiophene-2,5-diyl, thieno(2,3-b)thiophene-2,5-diyl, selenophene(3,2-b)selenophene-2,5-diyl, selenophene(2,3-b)selenophene-2,5-diyl, selenophene(3,2-b)thiophene-2,5-diyl or selenophene(2,3-b)thiophene-2,5-diyl (all optionally substituted);x = 0-2, preferably 1; eitherRa1, Ra2, Ra3 = 1-40C carbyl or hydrocarbyl (both optionally substituted) or H; orRa1Ra2Ra3 = hetero atom ring;y = 0-2;n = less than 1;R4, R5 = H, -CH2Cl, -CHO, -CH=CH2, -SiRa1Ra2Ra3, -SnRa1Ra2Ra3, -BRa1Ra2, -B(ORa1)(ORa2), -B(OH)2 or P1-Sp;P1 = polymerizable or crosslinkable group; andSp = spacer group or single bond. EXAMPLE - (4-(Thiophene-2-carbonyl)-(2,1,3)thiadiazole-3-yl)-thiophen-2-ylmethanone (1.7 g), anhydrous toluene (70 cm3) and Lawesson's reagent (3.8 g) were stirred at room temperature for 2 hours. 2-Ynedioic acid bis-(2-ethylhexyl) ester (3.4 g) was then added and the reaction mixture was heated at reflux for 17 hours. Acetone (50 cm3) was added to the mixture, and then the mixture was pre-absorbed onto silica and purified to give 4,7-dithiophen-2-yl-benzo(2,1,3)thiadiazole-5,6-dicarboxylic acid bis-(2-ethylhexyl) ester.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The nonaqueous electrolyte further contains carbonate compound (b) chosen from vinylene carbonate, vinylethylene carbonate, fluoroethylene carbonate and difluoroethylene carbonate, and functional group-containing compound of formula (III). The supporting electrolyte is lithium salt chosen from lithium hexafluorophosphate, lithium tetrafluoroborate, lithium bis(trifluoromethanesulfonyl)imide, lithium bis(pentafluoroethane sulfonyl)imide and lithium bis(fluoro sulfonyl)imide.A,B',D'=single bond, oxygen, sulfur, carbonyl, thiocarbonyl, sulfinyl, sulfonyl or NR8;R8=monovalent aliphatic hydrocarbyl, alicyclic hydrocarbyl or aromatic hydrocarbyl;andR4-R6=single bond or bivalent aliphatic hydrocarbyl.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The squarylinium dye is of formula (I), (II) or (III). The light emitting component is light emitting diode element.A=groups chosen from group of formulae (i)-(xi);A'=groups chosen from group of formula (xii)-(xxii);ring B, ring B'=benzene ring, naphthalene ring, phenanthrene ring or pyridine ring;R1,R'1=halo, nitro, cyano, 6-30C aryl, 7-30C arylalkyl, 1-8C alkyl, 1-8C haloalkyl, 1-8C alkoxy, 1-8C haloalkoxy or 2-8C ether;R2,R'2=H, halo, 6-30C aryl, 7-30C arylalkyl or 1-8C alkyl;R3-R9,R'3-R'9=H, halo, 1-8C alkyl, or group which forms condensed ring;X,X'=oxygen, sulfur, selenium, -CR51R52, 3-6C cycloalkan-1,1-diyl, -NH- or -NY2;R51,R52=H or 1-20C alkyl, 6-30C aryl or 7-30C arylalkyl (all optionally substituted by hydroxy, halo, cyano or nitro);Y,Y',Y2=H or 1-20C alkyl, 6-30C aryl or 7-30C arylalkyl (all optionally substituted by hydroxy, halo, cyano or nitro), in which alkyl and methylene of arylalkyl is optionally substituted by -O-, -S-, -CO-, -COO-, -OCO-, -SO2-, -NH-, -CONH-, -NHCO-, -N=CH- or -CH=CH-;andR,R'=0 or substituent number of groups (i)-(xxii).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The layer containing compound (I) is obtained by solution coating method. Preferred Definitions:    Q = tetravalent silicon;    A1 = group of formula (i)-(vii);    X1-X8 = carbon or nitrogen;    X9 = carbon, silicon, germanium, titanium or tin;    R4-R8, R11, R16, R17, R21, R22 = optionally substituted alkyl, cycloalkyl, aryl, heteroaryl, alkylsilyl, alkenyl, alkynyl, alkoxy, cycloalkyl oxy, aryloxy, acyl, alkoxycarbonyl, aryloxy carbonyl, acyloxy, acylamino, alkoxy carbonylamino, aryloxy carbonylamino, sulfonylamino, sulfamoyl, carbamoyl, alkylthio, arylthio, sulfonyl, sulfinyl, ureido, amide phosphate, hydroxy, mercapto, halo, cyano, sulfo, carboxy, nitro, hydroxamic acid, sulfino, hydrazino or imino, or bond with L2 in formula (I);    n1, n2 = 0-4;    R9, R10 = bond with L2 in formula (I);    X10 = oxygen-atom, sulfur or -NR'-;    R' = H, alkyl, aryl, acyl or sulfonyl.;    R12-R15, R18, R19, R21-R26 = H, R4-R8, R11, R16, R17, R21, R22; and    x, y, z = 0 or 1.    R12 and R13, R14 and R15, R18 and R19 may combine with each other and may form condensed ring, which may have a substituent.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The platinum-palladium alloy nanoparticles are octahedral. The platinum-palladium alloy nanoparticles are platinum-palladium alloy (Pt7Pd3, Pt5Pd5 or Pt3Pd7). The catalyzer is obtained from platinum metal salt which is chloroplatinic acid. The palladium metal salt is sodium tetrachloropalladate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The precipitator is lithium fluoride, sodium fluoride or ammonium fluoride.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): The preparation comprises carrying out a regular high-temperature solid phase method or a hydrothermal synthesis method. Preferred Method: The high-temperature solid phase method comprises taking chlorides of each element, grinding and drying, heating in a tube furnace, and providing hydrogen fluoride atmosphere by decomposition of ammonium bifluoride or ammonium fluoride; or reacting nitrate or hydrochloride of each element with ammonium bifluoride or ammonium fluoride solution according to a metering ratio to obtain the precipitate, evaporating and heating the tube furnace, where the heating temperature in the tube furnace is 700-1000 degrees C and the heating time is 4-10 hours. The hydrothermal synthesis method comprises taking nitrates or hydrochlorides of the metal elements according to a chemical metering ratio, adding a chelant into the nitrate or hydrochloride solution of metal element to react completely, adding a precipitator, performing hydrothermal synthesis at 160-220 degrees C for 14-36 hours, naturally cooling, and washing and drying the obtained precipitate to obtain the photoluminescence chemical material in the form of micro tubes, micro rods, a micro spheres, a micro flowers or a tripod micro tubes. While transmitting the intense red light with a central wavelength of 659 nm, the wavelength of the ultraviolet light is 370 nm or 442 nm and the wavelength of infrared light is 1540 nm. Preferred Components: The chelant is trisodium citrate, ethylene diamine tetraacetic acid, hexadecyl trimethyl ammonium bromide or polyvinylpyrrolidone.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The antireflective film contains antireflective material is chosen from silica (SiOx, where x is not defined), silicon nitride (SiNx or SNx), magnesium fluoride, alumina, titania and tantalum oxide. The transparent conductive film is indium-tin oxide film, aluminum-doped zinc oxide film or fluorine-doped tin oxide film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The inorganic film packaging material is a metal oxide, metal sulfide, or metal nitride. The metal oxide comprises calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, aluminum sesquioxide, chromium (III) oxide, tin dioxide, nickel oxide, or antimony pentoxide. The metal sulfide comprises titanium sulfide, iron sulfide, chromium disulfide, copper sulfide, zinc sulfide, tin sulfide, nickel sulfide, cobalt sulfide, antimony sulfide, lead sulfide, lanthanum sulfide, cerium sulfide, or zirconium sulfide. The metal nitride comprises silicon nitride, or aluminum nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The inorganic thin film packaging is metal oxide, metal sulfide, or metal nitride. The metal oxide comprises calcium oxide, tantalum pentoxide, titanium dioxide, zirconium dioxide, copper oxide, zinc oxide, aluminum oxide, chromium (III) oxide, tin dioxide, nickel oxide, or antimony pentoxide. The metal sulfide comprises titanium disulfide, iron sulfide, chromium (III) sulfide, copper sulfide, zinc sulfide, tin sulfide, nickel sulfide, lead sulfide, lanthanum sulfide, or zirconium disulfide. The metal nitride comprises silicon nitride or aluminum nitride.    TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The acrylic resin is polyester acrylate, epoxy acrylate, carbamate acrylate, or polyether acrylate. The plasticizer is dioctyl phthalate, dibutyl phthalate, polyvinyl butyral, acetyl tributyl citrate, dimethyl phthalate, diethyl phthalate, bis(2-(2-(butoxyethoxy)ethyl)) adipate, isopropyl titanate, butyl titanate, citrate, tris-2(ethylhexyl) trimellitate, bis(2-ethylhexyl) phthalate, bis(2-ethylhexyl) sebacate, glycol dibenzoate, phthalic anhydride, dipropylene glycol dibenzoate, or chlorosulfonated polyethylene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The oxidizing agent is ozone or hydrogen peroxide. The hydroxide is potassium hydroxide or sodium hydroxide. The wafer comprises silicon. The tunnel oxide comprises silicon dioxide. The amorphous layer comprises silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The Group V precursor comprises a nitrogen-containing species. The nitrogen-containing species comprises active neutral species of nitrogen. The nitrogen-containing species comprises a mixture of nitrogen and hydrogen. The Group V precursor comprises plasma-activated species of a Group V containing molecule. The Group III precursor comprises a gallium-containing species. The Group III precursor comprises species selected from boron (B), aluminum (Al), gallium (Ga) and indium (In). The Group III precursor comprises a metal organic species. The Group III-V thin film is a Group III metal nitride thin film. The hydrogen-containing species are selected from hydrogen and excited species of hydrogen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The upper clad layer comprises a first gallium nitride material. The active layer comprises a doped gallium nitride material including indium gallium nitride or aluminum gallium nitride. The under clad layer comprises a second gallium nitride material. The upper clad layer, the active layer, and the under clad layer are each formed using metal organic chemical vapor deposition (MOCVD) or a molecular beam epitaxial method. The first dielectric layer includes a silicon oxide material. The second dielectric layer includes a silicon nitride material. The wet etch process uses at least a buffered hydrogen fluoride as an etchant. The passivation layer is zirconium oxide, tantalum pentoxide, and/or amorphous silicon.    TECHNOLOGY FOCUS - METALLURGY - Preferred Component: The contact structure comprises metal.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method (M1), the preheated oven is maintained at a temperature of 155-165 degrees C (preferably 160 degrees C). Preferred Nanowire: The one dimensional nanowire has zinc sulfide shell formed radially surrounding the doped cadmium sulfide core. In the nanowire (N1), the doped cadmium sulfide core contains a dopant (preferably manganese), and the nanowire (N1) is manganese doped cadmium sulfide core with zinc sulfide shell (CdS:Mn/ZnS). Preferred Components: The dopant source is manganese acetate. The mixed aqueous solution (mixture II) consists of zinc acetate dihydrate in an amount that is 2.6 molar times that of the Cd molar concentration in mixture I and thiourea in an amount that is 3 molar times that of the Zn molar concentration in mixture II.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The reaction chamber is a closable cylindrical stainless steel chamber lined with a polymeric non-stick coating. EXAMPLE - In Teflon (RTM: polytetrafluoroethylene) lined closed cylindrical stainless steel chamber, a cadmium acetate and thiourea (1:3 molar ratio) were filled with appropriate amount of ethylenediamine and 3 molar.% of manganese acetate was used as the dopant source. The closed chamber was placed inside a preheated oven at 160 degrees C and the reaction was continued for 6 hours. In the next step, a mixed aqueous solution of zinc-acetate dihydrate (2.6 molar times that of cadmium source) and thiourea (1:3 molar ratio) was added and the reaction was continued for additional 4 hours. Upon normal cooling, the product was washed several times in water and ethanol and finally dried in vacuum to obtain core/shell single-crystalline, one dimensional manganese doped cadmium and zinc sulfide (CdS:Mn/ZnS) nanowire.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Device: The device further comprises at least one inorganic epilayer located on inorganic substrate, and at least one inorganic buffer layer positioned between inorganic substrate and inorganic epilayer. The anode comprises a semiconductor material chosen from an p-type or n-type semiconductor. The anode comprises indium tin oxide. The cathode comprises one or more materials sufficient to make ohmic contact with a semiconductor material. The material sufficient to make ohmic contact with semiconductor material is chosen from zinc, gold, aluminum, silver, their alloy, and their mixture. The inorganic substrate comprises a semiconducting material chosen from germanium, silicon, gallium arsenide, indium phosphide, gallium nitride, aluminum nitride, cadmium telluride, zinc telluride, copper indium gallium (di)selenide (CIGS), and their mixture. The inorganic epilayer comprises at least one of III-V group material, germanium, silicon, gallium arsenide, indium phosphide, gallium nitride, aluminum nitride, cadmium telluride, zinc telluride, copper indium gallium (di)selenide (CIGS), and their mixture, preferably gallium arsenide and indium phosphide. The inorganic buffer layer comprises gallium arsenide and/or indium phosphide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Layer: The organic window layer comprises 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) or naphthalene tetracarboxylic anhydride (NTCDA), and has thickness of less than 25 nm.
TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Composition: The ink composition further contains soluble high-molecular compound (0.5-20 weight%) and remainder of solvent component chosen from alcohol, glycol, ester, ketone and amine. The solvent has solvent polarity parameter of 40-55 kcal/mol. The solubility parameter of the high molecular compound is 9-14.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: The electronic device is obtained by printing the ink or on a printable surface.    TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Component: The ink (I1) comprises a second semiconducting material able to form a bulk heterojunction with the semiconducting nanoparticles, and the ink solvent is compatible for the semiconducting nanoparticles and for the second semiconducting material such that a stable or metastable ink is achieved.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method (M1), the semiconducting nanoparticles are treated with solutions of at least one substitution ligands to substitute insulating primary ligands at the surface of semiconducting nanoparticles with the substitution ligands. The substitutions ligands are selected according to their ligand affinity to the nanoparticles which is in the same range as the affinity of the insulating primary ligands and do not form a covalent bond to the semiconducting nanoparticles. The substitution ligands have a boiling point less than or equal to 150 degrees C; and a molecular weight of less than or equal to 100 g/mol. The substitution ligand is linear or branched 2-8C chain or (hetero)cyclic or (hetero)aromatic from monocyclic to polycyclic with 3 cycles. The substitution ligands comprises at least one pi -electron system. The method (M1) is repeated at least one time (preferably three times).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The washing agents are alcohols selected from methanol, ethanol, propanol and/or linear or branched 4-8C alcohols. The dispersion solvent is apolar aprotic solvent selected from n-hexane, petroleum ether and/or higher species including their isomers. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The buffer material further comprises a dopant, preferably p-type dopant chosen from lithium, sodium, potassium, nitrogen, phosphorus, arsenic, antimony and bismuth, or n-type dopant chosen from boron, aluminum, gallium, indium, fluorine, chlorine, bromine, iodine and astentine. The concentration of dopant is 1x 1014-1x 1020 atoms/cm3. The buffer material has thickness of 0.1-1000 nm, preferably 0.1-300 nm. The buffer material further comprises at least one other transparent material, preferably tin oxide. The atomic ratio of cadmium and zinc is 1:100-100:1. The atomic ratio of tin and zinc is 1:100-100:1. The substrate is a glass chosen from soda lime glass, low ferrous glass and solar float glass. The device has semiconductor material chosen from cadmium telluride, copper indium gallium sulfide and amorphous silicon. The device has substrate comprising glass, barrier material comprising silicon aluminum oxide or tin oxide, transparent conductive oxide material having cadmium sulfide or doped tin oxide, window material having cadmium sulfide, and semiconductor material having cadmium telluride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The thickness of conductive layer (2) is 0.5-10 mu m. Preferred Process: The conductive layer (2) is formed from substance which does not volatilize by heating at 450-660 degrees C for 1-100 hours in atmosphere containing hydrocarbon-containing substance.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The patterned inorganic material: comprises a metal suboxide composition, a patterned semiconductor material or a patterned dielectric material; and has an average pitch of less than or equal to 40 nm or for individual features having an average width of less than or equal to 20 nm. In the structure, the average linewidth roughness is 1.2-2 nm. EXAMPLE - Surfaces of 5 inch silicon wafers were pretreated with a basic detergent, an acidic detergent, oxygen plasma, ultraviolet ozone, piranha etch solution or dimethyl sulfoxide with subsequent heating to 225-275 degrees C to render the surfaces hydrophilic. The precursor solution (prepared by filtering a solution of zirconium oxychloride (0.5 moles) combined with ultrapure water (500 ml)) was coated on a standard lithography spin coating track. A wafer was loaded onto a spin coater and the precursor solution was dispensed onto the center of the wafer. The spin coater was spun at 100 RPM for 5 seconds to spread the resist across the wafer and then at 3000 RPM for 30-60 seconds to cast the resist film. The wafer was subjected to a pre-exposure bake at 40-200 degrees C for 0.1-5 minutes to give a substrate deposited with patternable coating materials on the surface.
TECHNOLOGY FOCUS - METALLURGY - The seed layer comprises one of copper, ruthenium, cobalt, copper alloys, ruthenium alloys or cobalt alloys. The barrier layer comprises of titanium, tantalum, titanium nitride or tantalum nitride.
TECHNOLOGY FOCUS - POLYMERS - Preferred Parameters: The thickness of A-layer and the diameter of distribution domain by non-crystalline thermoplastic resin is 2-20 (0.1-10). The surface protrusion height is less than or equal to 50 pieces/100 cm2. The coarse protrusion number of objects of greater than or equal to 0.56 mu m protrusion height is less than or equal to 5 pieces /100 cm2. The peak temperature of loss tangent in the dynamic viscoelasticity measurement of longitudinal direction is 120-180 degrees C. Preferred Components: The A-layer contains inert particle (0.02-0.5 mass%) with average particle diameter of 100-600 nm. The B-layer contains inert particle (0.02-0.5 mass%) with average particle diameter of 5-100 nm. The non-crystalline thermoplastic resin is non-crystalline polyimide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The silane compound is hydrolyzate of 3-aminopropyl trimethoxysilane and/or 3-aminopropyl triethoxysilane, or its reaction material. The organic compound layer further contains acrylonitrile, isocyanate compound, epoxy acrylate, compound (B) having two or more carboxylic acid groups, or 1 or more carboxylic acid anhydride groups, or its reaction material, non-aromatic unsaturated compound having hydroxyl group, and unsaturated compound chosen from unsaturated carboxylic ester, styrene, unsaturated carboxylic acid and unsaturated hydrocarbon. The non-aromatic unsaturated compound is 2-hydroxyethyl methacrylate. The unsaturated compound is methyl methacrylate. The compound (B) is tetrabasic acid anhydride or its reaction material.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The boric acid or borate is boric acid or trialkyl borate. The trialkyl borate is tributyl borate. The content of boric acid or borate is 3-50 parts mass with respect to 100 parts mass of polyimide resin.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The polyimide resin is obtained by reacting polyisocyanate having biphenyl structure and acid anhydride. Preferred Composition: The polyimide resin has content of biphenyl structure of 25-40 %mass, and logarithmic viscosity of 0.2-0.7 dl/g. The epoxy resin is bisphenol-A epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, biphenyl-type epoxy resin and/or naphthalene-type epoxy resin. The content of epoxy resin is 10-100 parts mass with respect to 100 parts mass of polyimide resin. The polyimide resin further has benzophenone structure or tolylene structure, and does not have alkylene structure. The polyisocyanate having biphenyl structure is polyisocyanate derived from tolidine diisocyanate or tolidine diisocyanate. Preferred Properties: The viscosity of epoxy resin is 12 Pa.second or less at 150 degrees C. The cured material of thermosetting resin composition has linear expansion coefficient of 50 ppm/ degrees C or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The base layer, the ceramic layer, or the protective layer is the film including silicon oxide, silicon nitride, silicon oxynitride, and/or silicon dioxide. Preferred Process: The base layer and the protective layer are formed into a film by plasma chemical vapor deposition (PECVD method) under film-forming pressure of 1-20 Pa, and high frequency electric-power of 10-30 MHz, in presence of source gas chosen from tetraethyl siloxane, hexamethyl disiloxane, tetramethyl cyclotetrasiloxane, hexamethyldisilazane, triethyl silane, trimethylsilane, monosilane, disilane, octamethylcyclo tetrasiloxane, tris dimethyl aminosilane, tetrachlorosilane, tetraethoxysilane, and bis(tertiarybutylamino)silane, and mixed gas chosen from oxygen, ozone, water, hydrogen peroxide, ammonia, nitrogen, nitrous oxide, carbon dioxide, carbon monoxide, hydrogen, argon, and helium. Preferred Properties: The base layer has thickness of 5-1000 nm, and arithmetic mean roughness (Ra) of 3 nm or less. The protective layer has thickness of 5-1000 nm. The ceramic layer has thickness of 10-1000 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The zinc-tin-metal (A) compound film is formed by forming zinc-type thin film containing zinc or zinc-chalcogen element compound on glass substrate, forming tin-type thin film containing tin or tin-chalcogen element on zinc-type thin film and heat-processing laminate of zinc-type thin film and tin-type thin film in atmosphere containing chalcogen element.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The semiconductor contains copper and silver as XI group element, zinc and/or cadmium as XII group element, indium, gallium and/or aluminum as XIII group element, and sulfur, selenium and/or tellurium as XVI group element. The semiconductor film contains I group element, II group element and oxygen. The semiconductor has a chalcopyrite structure. The semiconductor film has p-type semiconducting properties, resistivity of 1-107 Omega .cm and carrier concentration of 1011-1019/cm3. The band gap of semiconductor film is 1-2 eV.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The average particle diameter rubber-containing particles is 0.04-0.13 mu m. The refractive index difference of rubber-containing particles with respect to continuous phase (a) is 0.015 or less. The optical film has film thickness of 100 mu m or less, haze value of 1.2% or less at 23 degrees C, glass transition temperature of 120 degrees C or more, and thickness direction retardation of -0.5 nm to -200 nm. The absolute value of photoelastic coefficient of optical film is 5x 10-2. The frequency count of fold-proof of optical film in orthogonal direction is 10 or more with respect to stretching direction. Preferred Components: The optical film extends at least in one direction. The dispersed phase (b) contains particles having multilayered structure other than triple layer structure.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The polycrystal silicon ingot is a rectangular cross-section or a square of 322-530 mm length. The polycrystalline silicon is of n-type.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The basic compound is hydroxide or carbonate of alkali metal or alkaline earth metal, ammonia, 1-50C amine, 5-20C pyridine or 2-20C azole.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The acidic functional group containing monomer is acrylic acid, methacrylic acid, maleic acid, crotonic acid, itaconic acid, citraconic acid, vinyl benzoic acid or monomer of formula: H2C=C(-R5)-COO-R6-COOH (III) or H2C=C(-R7)-O-R8-COOH (IV). The nitrile group containing monomer is methacrylonitrile, acrylonitrile, alpha -cyano acrylate, dicyano vinylidene, fumaronitrile or monomer chosen from formulae: H2C=C(-R9)-COO-R10-OCH2CH2CN (V), H2C=C(-R11)-COO-(CH2CH2O)n-CH2CH2CN (VI), H2C=C(-R12)-O-R13-OCH2CH2CN (VII), H2C=C(-R14)-CONH-R15CH2CH2CN (VIII) and H2C=C(-R16)-CON(-R18CH2CH2CN)-R17-CH2CH2CN (IX).R5,R7,R9,R11,R12,R16=H or CH3;R6,R8,R15=1-20C alkylene and/or alkylene oxy chain;R10,R13=1-20C alkylene chain;andR17,R18=direct bond, 1-20C alkylene or 1-20C alkylene oxy.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The binder resin composition contains 0.1-1.5 mol of structural units derived from acidic functional group containing monomer with respect to 1 mol of structural unit derived from nitrile group-containing monomer. The copolymer further contains structural unit derived from acrylic monomer of formula: H2C=C(-R1)-COO-(CH2CH2O)n-R2 (I) and/or H2C=C(-R3)-COO-R4 (II).R1,R3=H or CH3;R2=H, 1-12C alkyl or phenyl;n=1-50;andR4=H or 4-100C alkyl.The total amount of the structural units (I) and (II) with respect to 1 mol of structural units derived from nitrile group-containing monomer is 0.001-1.5 mol. The acidic functional group is carboxyl group, sulfo group or phospho group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metallic catalyst comprises gold, nickel, iron, silver, palladium and/or palladium/nickel. The silicon gas comprises silane, silicon tetrachloride, and/or trisdimethylaminosilane. The solar cell further comprises silicon-germanium branched nanowires and/or germanium branched nanowires.
TECHNOLOGY FOCUS - METALLURGY - The contact member is made of metal material. The thin conductor strips are made of copper foils.    TECHNOLOGY FOCUS - POLYMERS - The housing is made of durable plastic.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The doping gas is selected from diborane and phosphine.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The component of the etching liquid contains potassium hydroxide and isopropanol.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The hindered amine light stabilizer is stabilizer having tertiary hindered amine group. The antioxidant is hindered phenolic antioxidant having beta position of hindered phenol group substituted by t-butyl group.    TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The adhesive sheet has water vapor permeability of less than 0.5 g/m2.day at 40 degrees C and 90% relative humidity.
TECHNOLOGY FOCUS - METALLURGY - Preferred Materials: The substrate carrier is formed from a material comprising aluminum, stainless steel, aluminum magnesium silicon, aluminum magnesium manganese, and/or titanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The micron-sized electrically conductive particles and/or the sub-micron-sized electrically conductive particles: includes metal particles, metal plated particles and/or metal alloy particles; and is copper, silver (both preferred), platinum, palladium, gold, tin, indium, aluminum and/or bismuth. The micron-sized electrically conductive particles: have an average particle size of 2-20 mu m; and is present at 70-90 wt.%, based on the total amount of the adhesive. The sub-micron-sized electrically conductive particles: have an average particle size of 400-800 nm; and is present at 0.5-7.5 (preferably 0.75-2) wt.%, based on the total amount of the adhesive. The weight ratio of micron-sized electrically conductive particles to sub-micron-sized electrically conductive particles is 100:0.1-100:21.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The adhesive additionally comprises at least one curing agent. Preferred Components: The resin component is: thermosetting resins and/or thermoplastic resins; and epoxy resins, benzoxazine resins, acrylate resins, bismaleimide resins, cyanate ester resins and/or polyisobutylene resins, where the epoxy resin is monofunctional glycidyl ethers and/or poly-functional glycidyl ethers. In bonded assembly, at least one inwardly facing surface has a surface area of less than 5000 mu m2. EXAMPLE - Typical adhesive comprised (in wt/wt.%) of: diepoxide of a cycloaliphatic alcohol of bisphenol A (8.63); cycloaliphatic epoxy resin (2.16); micron-sized electrically conductive particles (having volume average particle size of 2-50 mu m) (84.91); sub-micron-sized electrically conductive particles (having volume average particle size of 500-800 nm) (1.82); boron trifluoride amine complex (0.81); and butyl glycol acetate (1.68).
TECHNOLOGY FOCUS - METALLURGY - The metal layer in the composite anode is selected from aluminum (Al), calcium (Ca), magnesium (Mg), silver (Ag), gold (Au), platinum (Pt) and palladium (Pd).
TECHNOLOGY FOCUS - METALLURGY - The upper electrode is gold or silver, and the lower electrode is titanium/gold or titanium/palladium/silver. The insulating layer is made from silicon dioxide.
TECHNOLOGY FOCUS - METALLURGY - The double-structure textured TCO thin film is zinc oxide, boron doped zinc oxide thin film, aluminum doped zinc oxide thin film, gallium doped zinc oxide thin film and metal element, rare earth elements or metal oxide film doped zinc oxide thin film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The alloy thin film has gallium concentration of 10-20 atomic%. Preferred Property: The thickness of alloy thin film is 0.1-2 mm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The maximum crystal grain diameter is 20 mm or less.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Arrangement: A light-receiving surface is set by using the electrode layer at the side of photoelectric conversion layer containing pigment with short maximal absorption wavelength as transparent electrode.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compounds: The semiconductor is a porous semiconductor. P-type semiconductor is used for one photoelectric conversion layer and n-type semiconductor is used for the other photoelectric conversion layer. The conductive layer is an ionic conductor containing oxidation-reduction species, or a liquid electrolyte.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Pigment: The pigment differs in maximal absorption wavelength for every photoelectric conversion layer. Preferred Definitions:    M=ruthenium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal of the polymeric metal oxide nano-dot is aluminum, tin, magnesium, calcium, titanium, manganese, zinc, gold, silver, copper, nickel or iron. The metalloid of the polymeric metalloid oxide nano-dot is silicon. The mean particle size of the modified nano-dot is 1-100 nm. In the fabrication method of the modified nano-dot: a positive surface charge of the modified nano-dot is +1 to +200 mV; and a negative surface charge of the modified nano-dot is -1 to -200 mV.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The amount of the modifier diluted with the solvent is present at 0.1-99.9 wt.%. The nano-dot solution of the polymeric metal oxide, polymeric metalloid oxide or polymeric metal alloy oxide is present at 0.1-20 wt.%. The modifier has amino group, hydroxy group, alkyl group, alkenyl group, halogen group or phosphite group. The modifier having the amino group is 3-aminopropyltriethoxysilane. The modifier having the alkyl group is n-octyltrimethoxysilane. The modifier having the alkenyl group is vinyltrimethoxysilane. The solvent is tetrahydrofuran, toluene or alcohol. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The gas barrier layer contains polysilazane compound which is perhydropolysilazane. The adhesive sheet is ionized using a gas chosen from hydrogen, nitrogen, oxygen, argon, helium, neon, xenon and krypton. The adhesive in the adhesive layer is rubber-based adhesive agent or acrylic adhesive. Preferred Properties: The water-vapor-permeation rate of adhesive layer with 50 mu m-thickness is 25 g/m2/day or less at 40 degrees C and relative humidity of 90%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The alkali silicate film layer contains metal oxide of formula: M2O.nSiO2, where M is lithium, sodium or potassium and n is 3-5. The base material is copper-coated steel sheet containing (in %mass) carbon (0.001-0.15), silicon (0.001-0.1), manganese (0.005-0.6), phosphorus (0.001-0.05), sulfur (0.001-0.5), aluminum (0.001-0.5), nickel (0.001-1), chromium (0.001-1), copper (0-0.1), titanium (0-0.5), niobium (0-0.5), nitrogen (0-0.05) and remainder of iron and unavoidable impurities. The core material is copper-coated steel sheet containing (in %mass) carbon (0.001-0.15), silicon (0.001-1.2), manganese (0.001-1.2), phosphorus (0.001-0.04), sulfur (0.0005-0.03), aluminum (0-0.2), nickel (0-0.6), chromium (11.5-32), copper (0-1), titanium (0-1), niobium (0-1), nitrogen (0-0.025), molybdenum (0-2.5), boron (0-0.01), vanadium (0-0.5), tungsten (0-0.3) and mixture (0-0.1) of calcium, magnesium, yttrium and rare-earth metal and remainder of iron and unavoidable impurities. The substrate has further has nickel plating layer (13) interposed between base material and copper coating layer and molybdenum film layer on alkali silicate film layer. Preferred Process: The copper coating layer is formed by electric copper plating method.
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preferred Method: The method uses measurement substrate for antigen antibody reaction which reacts with the antigen which adds an antibody to plasmon metal complex aqueous solution, deposits a metal complex with an antibody on a metal substrate, and corresponds specifically.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The carriers are metal substrate, metal particle, metallic needle, or capillary film. The quantum crystal comprises nanocluster of plasmon metal which is arranged on the metal carrier. At least one part of plasmon metal forms the nanocluster in the quantum crystal of the metal complex formed on the metal carrier exists in a ligand and an ionic bond state. The metal complex is formed using amino acid ion, ammonia ion, thiosulfate ion, or nitrate ion as ligand. The plasmon metal is chosen from gold, silver, and copper. The concentration of plasmon metal complex aqueous solution is 500-5000, preferably 500-2000 parts/million (ppm). The molar fraction of the dispersing agent with respect to a silver nanocluster is 1:50-1:150 in conversion of a silver atomic weight. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: A film is formed by stretching multibranched polyimide to draw ratio of 0.05-0.5. The multibranched polyimide is formed by imidating multi-branched polyamic acid which is an intermediate-reaction product of pyromellitic dianhydride and 1,3,5-tris(4-aminophenoxy)benzene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Solution: The seed crystal growing solution contains structure directing agent having amine, imine or quaternary ammonium. The film is formed using zeolite or analogous molecule, preferably MFI zeolite, ZSM-5, silicalite, TS-1, AZ-1, bor-C, FZ-1, LZ-105, monoclinic H-ZSM-5, NU-4, NU-5, TSZ, TSZ-III, TZ-01, USC-4, USI-108, ZBH or ZKQ-1B. Preferred Substrate: The substrate contains metallic and nonmetallic elements including two or more hydroxyl groups in oxide material, thiol or amine combined with single metal or metal alloy, polymers having functional groups on the surface, semiconductor compounds, zeolite, or natural polymer, synthetic polymers or conductive polymer membrane having hydroxyl groups at surface. The structure directing agent includes quaternary ammonium hydroxide of formula: R1-N+(-R2)(-R4)-R3.OH-.R1-R4=H, or 1-30C alkyl, aralkyl or aryl (optionally substituted with hetero atom chosen from oxygen, nitrogen, sulfur and phosphorus).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The temperature of the body is set at temperatures typically of less than -15 (preferably less than -25, especially less than -50) degrees C. The second step is present.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The second heat transfer system is the same or different from the first heat transfer system. The heat transfer fluid comprises at least one linear perfluoropolyethers (I) (at least 50, preferably at least 60, especially at least 70 mol.%), optionally, at least one fluid selected from hydrofluoroether (HFE), hydrofluoropolyether (HFPE) and perfluoropolyether (PFPE) (preferably (HFPEs) of formula R'bO-Rf1-Rb1 (II) (at most 40, preferably at most 30, especially at most 20 mol.%)) and optionally, at least one additive. The heat transfer fluid consists of the linear perfluoropolyether (I). The linear perfluoropolyether (I) is of formula R'f-(OCF2)n'(OCF2CF2)m'-OR'f (III). The secondary loop passageway comprises at least one rubber seal.R'b and Rb1=-Cm1F2m1+1 or -Cn1F2n1+1-h1Hh1;m1,n1=1-3;h=1 to 2n1+1;Rf1=perfluoropolyoxyalkylene chain of formula -(CF2O)a1-(CF2CF2O)b1-(CF2-(CF2)z1-CF2O)c1;a1,b1,c1=up to 100 (preferably up to 50);z1=1 or 2;m',n'=0-50 (preferably up to 20);m'/n'=0.1-10.Provided that one of R'b and Rb1 is a -Cn1F2n1+1-h1Hh1, and the other of R'b and Rb1 is -Cm1F2m1+1; when a1, b1 and c1 is greater than or equal to 0, then a1+b1 is greater than 0 (preferably, each of a1 and b1 is greater than 0 and b1/a1 comprises 0.1-10). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - POLYMERS - Preparation (Claimed): The preparation of the polymer, comprises carrying out Suzuki, Yamamoto, Stille or Hartwig-Buchwald polymerization. Preferred Components: The proportion of structural units (I) is (0.01-50 mole.%), based on the total number of structural units of the polymer. Preferred Definitions:    T = metal-ligand coordination compound, where the metal-ligand coordination compound contains at least a bi- or multidentate organic ligand and the metal in the metal-ligand coordination compound is platinum or iridium.    EXAMPLE - Polymers were synthesized using monomers 2,2'-(6,6-bis(4-tert-butylphenyl)-12,12-dioctyl-6,12-dihydroindeno(1,2-b)fluorene-2,8-diyl)bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) (50 mole.%), 2,8-dibromo-6,6,12,12-tetraoctyl-6,12-dihydroindeno(1,2-b)fluorine (24 mole.%), bis(4-bromophenyl)methanone (25 mole.%) and iridium complex of formula (III) (1 mole.%) by Suzuki coupling.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The weather-resistance polyester film is obtained by simultaneously-biaxially stretching process.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal conductive layer contained on the transparent conductive film contains electroconductive material.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The amount of structural unit (I) is 95 mol% or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The weight ratio of naphthalene disulfonic acid salt and naphthalene monosulfonate is 1-60:99-40. The amount of naphthalene-type compound contained in naphthalene monosulfonate is 20-90 wt.%. The naphthalene monosulfonic acid contains naphthalene-type compounds of formulae (II) and (III). The conductive polymer monomer is pyrrole. Preferred Process: Nitro group-containing compounds of formulae (IV)-(VI) is further dissolved in electrolytic polymerization liquid.R1-R15=H, linear or branched 1-6C alkyl or phenyl.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The carrier plate comprises glass. The surface-treated regions comprise a region formed by plasma or ion beam treatment, or a region formed by depositing or coating organosilane, organosilazane or siloxane-based resin composition. The glass filler-reinforced plastic substrate film is a transparent composite in which a glass-filler is impregnated or dispersed in a transparent siloxane-based resin or organic resin having crosslinkable reactive group, preferably glass cloth or glass fabric, nonwoven glass fabric, glass mesh, glass beads, glass powder, glass flakes, chopped glass, milled glass, fumed silica sol and/or colloidal silica. The glass filler-reinforced plastic substrate film is coated with a hard coating layer such that film has excellent planarity and/or gas barrier property. Preferred Process: The surface-treating involves surface modification of a carrier plate using plasma or ion beam treatment, or surface modification of carrier plate using a thin film coating of organosilane, organosilazane or siloxane-based resin, or organic resin.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The hard coating layer comprises crosslinkable organic resin, crosslinkable organic resin having inorganic nanoparticles dispersed, or inorganic film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition comprises (mole.%): lithium cation (5-40); potassium cation (20-70); at least two members selected from: sodium cation (0-30), calcium cation (10-25) and cesium cation (10-40); nitrate anion (40-100); and optionally at least one anion selected from nitrite (40-90) and chloride (0-5), where when cesium or calcium is not present, the composition comprises nitrite; or lithium (10-30, preferably 15-30, especially 15); potassium (25-45, preferably 30-45, especially 30 or 40); sodium (5-15, especially 10); calcium (5-20, preferably 10-20, especially 15); cesium (15-35, preferably 20-30, especially 30 or 20); nitrate (96-100, preferably 100, especially 97); and optionally chloride (1-4, preferably 3); or lithium (20-30, preferably 24 or 26); sodium (5-15, preferably 11 or 15); potassium (40-60, preferably 53, especially 48); calcium (5-20, preferably 13, especially 12); nitrate (15-35, preferably 21 or 24); nitrite (65-85, preferably 79, especially 74); and optionally chloride (1-3, preferably 2); or lithium (20-35, preferably 24 or 28); sodium (15-25, preferably 22); potassium (30-40, preferably 33, especially 32); cesium (10-25, preferably 21, especially 18); nitrate (40-55, preferably 45 or 46); nitrite (45-60, preferably 55, especially 53); and optionally chloride (0.1-3, preferably 1). EXAMPLE - A composition comprising (mole.%): lithium cation (15), potassium cation (30), sodium cation (10), calcium cation (15), cesium cation (30) and nitrate anion (100) was prepared. The melting point of the salt mixture was found to be 65 degrees C, and thermal stability was found to be 561 in air and 563 in nitrogen atmosphere.
TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The crystalline polymer microporous film is laminated with porous material comprising polymer porous membrane or nonwoven fabric. Preferred Properties: The average stream flow hole diameter of hole in layer (102) is 200 nm or less. The thickness of layer (102) is 0.1-50 mu m. Preferred Composition: The crystalline polymer (p1) and crystalline polymer (p2) contain polytetrafluoroethylene or its copolymer. The polytetrafluoroethylene copolymer contains tetrafluoroethylene, perfluoroalkyl vinyl ether, hexafluoropropylene and/or chlorotrifluoroethylene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The film thickness of film (a) and film (b) is 200-700 mu m and 300-2200 mu m, respectively. The transparent conductive film (b) has surface roughness of 35.0 nm or more and surface resistance of 25 ohms/square or less. The transparent conductive film laminate has haze rate of 10% or more.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): A triazine compound of formula (II) is subjected to coupling reaction with Ar1-B'(OR1)2, Ar3-B'(OR1)2 or Ar2-B'(OR1)2 in presence of base and metal catalyst, to obtain 1,3,5-triazine compound derivative.X=leaving group;R1=H, 1-4C alkyl or phenyl group, where two R1 are united with oxygen atom and boron atom, to form ring;andAr2,Ar3=Ar1. SPECIFIC COMPOUNDS - 2,4,6-tris(4'-(2-pyridyl)biphenyl-4-yl)-1,3,5-triazine of formula (Ia) is disclosed as 1,3,5-triazine compound derivative (I).    EXAMPLE - 4-(Pyridin-2-yl)phenylboronic acid (3.28 g), toluene solution (0.17 mL) containing 2,4,6-tris(4-bromophenyl)-1,3,5-triazine (1.5 g), palladium acetate (12.3 mg), and tri-tert-butylphosphine (0.165 mmol) were suspended in tetrahydrofuran (50 mL), heated and refluxed. 4N-sodium hydroxide aqueous solution (6.9 mL) was added to obtained solution, refluxed for 25 hours, and water (50 mL) and methanol (20 ml) were added to mixture, cooled and filter-separated, to obtain 2,4,6-tris(4'-(2-pyridyl)biphenyl-4-yl)-1,3,5-triazine as white solid (1.6 g).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor fine particles are titanium oxide fine-particles.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The photoelectric conversion element has the photoreceptor layer, a charge-transfer component (3), and structure which laminated the counter electrode (4) on an electroconductive support (1). The composite sensitizing dye is adsorbed to the semiconductor fine-particles. The dye (I) is dye of formula (V)-(VII).R13-R17=H, alkyl, alkoxy, or aryl;andX'=S, O, NH, and Se. Preferred Definitions:    M=ruthenium;    B1=group of formula (a)-(c), =C(-R112)-R111 or =C(-COOH)-CN;    R110, R19=aliphatic group, aromatic group, or heterocyclic group optionally having acidic group as functional group;    u=0-3;    R18=sulfur or=C(-R114)-R113;    R111-R114=cyano or acidic group, and    R19=aliphatic, aromatic, or heterocyclic group optionally having acidic group.    The carbon-carbon double bonds in formula (a),=C(-R112)-R111and=C(-R114)-R113 are E-type or Z-type.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The AZO film layer of the dual layer is deposited on the TCO glass by magnetron sputtering device. The temperature of the primary piece of the TCO glass is 150-350 degrees C, vacuum degree of the main unit is less than 1x 10-5 Pa, sputtering pressure is 2-5 mTorr, gas is argon and oxygen, volume ratio of argon is 94-96% and oxygen is 4-6%, and target material for depositing the dual-layer AZO film layer is AZO ceramic target. Preferred Component: The content of Al2O3 is 1.8-2.2% in the first AZO film. The content of Al2O3 is 3-5% in the first AZO film. The thickness of the first AZO film is 950-1050 nm.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: During washing process, the substrate is immersed in 100% acetone solution for 10-30 minutes, then in 100% methanol solution for 10-30 minutes, then in deionized water of 20-30 degrees C for two times or more, and further in 5-15 weight% isopropyl alcohol solution of 40-70 degrees C for 3-6 minutes.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The standard chemical solution comprises ammonium hydroxide (0.1-5%) and hydrogen peroxide (0.1-5%). During washing process, the silicon substrate is immersed in standard chemical solution of 25-80 degrees C for 2-4 minutes. The concentration of hydrofluoric acid is 0.1-15%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The indium target has oxygen concentration of 0.0005 %mass or less. Preferred Property: The indium target has average particle diameter of 10 mm or less.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The component (a) is chosen from imidazole-type microcapsule hardening agent and amine microcapsule-type hardening agent. The mass ratio of imidazole-type microcapsule hardening agent and amine microcapsule-type hardening agent is 15:85-22:78. The amine microcapsule-type hardening agent is hardening agent obtained from diethylenetriamine or triethylene tetraamine. The amine microcapsule-type hardening agent has benzene structure, naphthalene structure, diphenyl structure, triphenyl structure, anthracene structure, dicyclopentadiene structure, norbornene structure, acenaphthalene structure, adamantane structure, fluorene structure, benzofuran structure, benzoxazine structure, indene structure, indane structure, hydantoin structure, oxazoline structure, cyclic carbonate structure, aromatic ring imide structure, alicyclic imide structure, oxadiazole structure, thiadiazole structure, benzoxadiazole structure, benzothiadiazole structure, carbazole structure, azomethine structure, oxazolidone structure, triazine structure, isocyanurate structure, xanthene structure or structures of formulae (I-XVIII).    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The component (b) contains trifunctional or polyfunctional epoxy resin. The polyfunctional epoxy resin includes structure originating in glycidyl amine compound. The hardening agent composition further composition further contains epoxy resin (c) other than (b). The mass ratio of component (b) with respect to component (c) is 100:10-100:10000.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal powder is titanium, tantalum, cobalt chrome, niobium, stainless steel, nickel, copper, aluminum, and/or its alloys. The metal powder is commercially pure titanium and titanium alloys. The extractable particulate is spherical potassium chloride having an average diameter of 50-600 microns.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The first homogenizing aid is: polyethylene glycol having a molecular weight of 2000-35000; and solid at room temperature. The second homogenizing aid is mineral oil or polyethylene glycol having a molecular weight of 200.
TECHNOLOGY FOCUS - METALLURGY - Preferred Method: The method further comprises annealing the layers at 160-180 degrees C for 300-600 seconds; and annealing layers at 270-400 degrees C for 900-1800 seconds. The substrate comprises glass, metal, metal foil, stainless steel or copper foil. The backside electrode comprises molybdenum, copper or titanium. At least one of the layers comprises selenium. The electrodepositing step comprises electrodepositing a copper metal layer on the backside electrode; electrodepositing a zinc metal layer on the copper metal layer; and electrodepositing a tin metal layer on the zinc metal layer.
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The steel plate further contains boron (0-0.01), vanadium (0-0.5), tungsten (0-0.3), calcium, magnesium, yttrium and rare earth element.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The intermediate layer comprises one of zinc oxide (ZnO), tin oxide (SnO), and silicon oxide (SiOx).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The semiconductor film can be made of cadmium sulfide/cadmium telluride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The vapor deposition material further contains zinc sulfide. Preferred Properties: The vapor deposition film has tensile strength of 3% or more. The shape of vapor deposition material is granular form, powder form or press-molded form.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The photoconductive material layer has thickness of 0.5-20 mu m, preferably 1-2 mu m. Preferred Composition: The photoconductive material is crystalline silicon or multicrystalline silicon.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The luminescent material is luminescent dye or semiconductor. The reflective layer (A) is dielectric mirror, dichroic mirror, photonic crystals or wavelength filter.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The fatty-acid silver is 8-18C fatty-acid silver.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The fatty acid is monocarboxylic acid.
TECHNOLOGY FOCUS - METALLURGY - The electrode is made of bimetal or triple-metal material selected from iron-silicon, silicon-germanium, antimony-tellurium, germanium-lead-tellurium, lead-tellurium, lead-selenium, lead-selenium-tellurium, bismuth telluride or antimony telluride.
TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): The preparation of (I) comprises in presence of catalyst and organic solvent in oxygen-free environment, carrying out Stille coupling reaction with heterocyclic compounds of formula (II), (III), (IV) and (V) to obtain (I).x+y+z=2;x= not less than 1;z, y=0-1;andn=1-100.Preferred Processes: The preparation of compound (IV) comprises condensing diketone compound and 3,6-dibromo-o-phenylenediamine compound at mol ratio of 1:0.1-10 for 1-24 hours at 20-120 degrees C in presence of organic solvent. The temperature of Stille coupling reaction is 60-130 degrees C for 24-72 hours. Preferred Components: The organic solvent of condensation reaction is acetic acid, m-cresol, p-toluenesulfonic acid, chloroform, methanol, ethanol and butanol. The mol ratio of compounds (II), (III), (IV) and (V) is k:i:m:p. The amount of catalyst of Stille coupling reaction is 0.05-50%. The catalyst is organic palladium catalyst or mixture of organic palladium catalyst and organic phosphine ligand; the organic palladium catalyst is tris(dibenzylideneacetone)dipalladium(0), tetrakis(triphenylphosphine)palladium or bis(triphenyl-phosphine)palladium(II) chloride; the organic phosphine ligand is tri(o-tolyl)phosphine; and the organic solvent of the Stille coupling reaction is tetrahydrofuran, glycol dimethyl ether, benzene, chlorobenzene and/or toluene.m+p=more than 0 and not less than k;m, p=more than 0;andi= not less than 0.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal layer comprises a metal consisting of aluminum, barium, indium, silver, copper, gold, platinum, palladium, samarium, magnesium, calcium and/or lithium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic particles contain metal particles of gold, silver, copper and/or platinum.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The hydrocarbon and alcohol are alicyclic compounds.
TECHNOLOGY FOCUS - POLYMERS - The protective film consists of polypropylene or polyethylene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal-adhesive layer further comprises cobalt (Co), tungsten (W), chromium (Cr), molybdenum (Mo), nickel (Ni), titanium nitride (TiNx), titanium tungsten (TiWx), titanium silicide (TiSix), titanium silicon nitride (TiSiN), tantalum nitride (TaNx), tantalum silicon nitride (TaSiNx), nickel vanadium (NiV), and/or tungsten nitride (WNx). The insulating anti-reflection layer includes SiNx; silicon oxide (SiOx); titanium oxide (TiOx); and/or aluminum oxide. The anti-reflection layer includes a transparent conducting oxide (TCO) layer, and the metal adhesive layer is in contact with the TCO layer. The TCO layer includes indium tin oxide (ITO); aluminum zinc oxide (AZO); gallium zinc oxide (GZO); and tungsten doped indium oxide (IWO). Preferred Method: Forming the front side metal grid further comprises forming a soldering layer comprising tin or Ag on top of metal-contact layer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The aqueous solution includes hydrofluoric acid and nitric acid. The crystalline silicon substrate is monocrystalline silicon substrate or polycrystalline silicon substrate. The residue-removing liquid is hydrofluoric acid aqueous solution. The etching residues remaining on an upper surface of the substrate are removed by plasmarizing etching gas (II) including fluorine or chlorine. Etching gas (II) includes hydrogen chloride, chlorine trifluoride, nitrogen fluoride, carbon tetrafluoride, octafluoropropane, nitrogen trifluoride, hexafluoroethane, fluorine, trifluoromethane, sulfur hexafluoride, and/or chlorine. Etching gas (II) includes inert gas and/or oxygen.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The solid source is phosphorus oxide (PxOy, where x and y are not defined) or boron oxide (BxOy).
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Components: The alcohol compound comprises at least one compound selected from ethanol, propanol, and isopropanol. The compound for releasing in the alkaline solution noble metal ions is a silver compound, where the silver compound is a silver salt of an inorganic acid or a silver salt of an organic acid. The silver compound contains at least one compound selected from silver chlorate (AgClO3), silver acetate (AgC2H3O2), silver permanganate (AgMnO4) and silver sulfate (Ag2SO4), and the additive amount of the silver compound is approximately 30 ppm to 5000 ppm by weight. Preferred Composition: The additive amount of the silver compound is approximately 1 ppm to 100 ppm by weight. The alkaline compound is potassium hydroxide, and the additive amount of the potassium hydroxide is approximately 1% to 4% by weight, the alcohol compound is an isopropanol, the additive amount of the isopropanol is approximately 2% to 6% by volume, and the additive amount of the silver compound is approximately 1 ppm to 100 ppm by weight. The additive amount of the alkaline compound is approximately 1% to 4% by weight, the additive amount of the alcohol compound is approximately 0.5% to 10% by volume, and the additive amount of the silver compound is approximately 1 ppm to 1500 ppm by weight.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inclusion is metal, metal oxide, carbon, carbon compound and/or chloride compound, preferably iron oxide, chromium oxide, nickel oxide, silicon oxide, aluminum oxide and/or cobalt oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of peroxo disulfate or peroxo monosulfate is 60-100 g/L. The content of hyphochlorite is 300-600 mL/L. The alkaline component of the alkaline etching solution is chosen from sodium hydroxide, potassium hydroxide, ammonia or its derivative, alkylamine, tetra alkylammonium hydroxide, alkanol amine, hydroxy alkylamine, polyalkylene amine and cyclic N-substituted amine. The content of alkaline component is 1-100 g/L, preferably 5-10 g/L. The aqueous alkaline etching solution further contains complexing agent, surfactant and/or stabilizer. The complexing agent is chosen from hydroxyphenol, amine, hydroxy carboxylic acid, polyalcohol, phosphonic acid and/or polyphosphate. The peroxodisulfate is ammonium and/or potassium peroxodisulfate. The peroxomonosulfate is potassium peroxomonosulfate. The dopant is phosphorus, arsenic, boron, aluminum or gallium.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The organic solvent is 1-4C primary or secondary monohydric alcohol. The polysaccharide or its derivative is chosen from chitin, chitosan, cellulose, cellulose derivative, chitosan derivative and hydroxyalkylated polysaccharide. The polybasic organic acid is chosen from aromatic polybasic carboxylic acid and aromatic polybasic carboxylic acid derivative, preferably polybasic organic acid anhydride. The electroconductive material is electroconductive carbonaceous material. The mass ratio of polysaccharide and polybasic organic acid is 0.8-5. The electric collector contains coating solution including binder.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The indium target has arithmetic mean surface roughness of preferably 1.2 mu m or less and 10-point average surface roughness of 10 mu m or less.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The dopant source contains silicon phosphide (SixPy) phases and/or silicon phosphate (SixPyOz) phases. The dopant is removed using alkaline etching solution, alkaline component, peroxodisulfate, peroxomonosulfate, hypochlorite and/or hydrogen peroxide. The alkaline component is chosen from sodium hydroxide, potassium hydroxide, ammonia, ammonia derivative, alkyl amine, alkanolamine, hydroxyalkyl alkyl amine, polyalkylene amine, cyclic N-subamine and tetraalkyl ammonium hydroxide. The alkaline etching solution contains complexing agent, surfactant and stabilizer. The complexing agent is chosen from hydroxy phenol, amine derivative, hydroxycarboxylic acid, polyalcohol, phosphonic acid and polyphosphate. The peroxodisulfate is sodium peroxodisulfate and/or potassium peroxodisulfate. The peroxomonosulfate is potassium peroxomonosulfate.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The method involves selecting the process pressure value to at least 0.3 mbar. The method involves performing only step (a) at a pressure value of 0.45 mbar and power density value of 270 W/14000 cm2. The method involves selecting the process pressure to 0.4 mbar and the power density to 230 W/14000 cm2.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The support material comprises at least one of aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide. The particles comprise at least one of silicon oxide and nitride oxide.
TECHNOLOGY FOCUS - METALLURGY - The carrier medium includes a metal selected from the group consisting of gold, silver, copper, nickel, titanium and platinum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The high transmittance glass comprises silicon dioxide (71-75 wt.%), sodium oxide (13-14 wt.%), calcium oxide (10-11 wt.%), magnesium oxide (2-3 wt.%), aluminum oxide (0.02-0.05 wt.%), potassium oxide (0.01-0.02 wt.%), manganese dioxide (0.18-0.25 wt.%), iron oxide (15-18 ppm) and iron oxide (total iron) (0.007-0.008 wt.%), where the glass has a redox ratio in the range of 0.15-0.25. The manganese dioxide is in the range of 0.05-0.6 (preferably 0.2-0.25) wt.%. The glass has a redox ratio in the range of 0.1-0.4, preferably 0.2-0.25. The total iron is less than 0.02 wt.%. The glass melting furnace is an air-fuel furnace or oxy-fuel furnace. EXAMPLE - Typical glass sheet composition comprised (in wt.%) of: silicon dioxide (72.43); sodium oxide (13.61); calcium oxide (10.6); magnesium oxide (2.84); aluminum oxide (0.04); potassium oxide (0.014); manganese dioxide (0.1899); iron oxide (0.0017); and iron oxide (total iron) (0.0075).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The contact layer contains molybdenum, tungsten, titanium or tantalum. The film stack comprises copper film, indium film, and/or gallium film.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The transparent electrode layer of solar cell is made of transparent conductive oxide material such as combination of zinc oxide and aluminum, zinc oxide boron combination, zinc oxide, boron combination, indium tin oxide, and indium zinc oxide.    TECHNOLOGY FOCUS - METALLURGY - The light absorbing layer of solar cell comprises material made of copper, indium, gallium and selenium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The oxygen diffusion protecting layer is high-concentration boron layer (120). The boron concentration (A) of high-concentration boron layer is higher than boron concentration (B) of substrate layer (I) and boron concentration (C) of substrate layer (II). The copper concentration (a) of oxygen diffusion protecting layer is higher than copper concentration (b) of substrate layer (I) and copper concentration (c) of substrate layer (II). Preferred Property: The depth of oxygen diffusion protecting layer is 3-10 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The substrate is silicon, and the first material is germanium. The second material comprises germanium, germanium silicon, or polysilicon.
TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The microporous membrane has porosity of 30-60%, air permeability of 100-10000 second/100 ml, and winding-road rate of 1.2-2.5. Preferred Process: A polymer composition is formed on at least one main surface of the microporous membrane, during formation of separator. The polymer composition comprises metal oxide. Preferred Composition: The material of microporous membrane is polyolefin. The polymer composition comprises metal oxide, and copolymer containing polyvinylidene fluorine or polyvinylidene monomeric unit.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The quantum wells of the first type are formed of GaNAs materials. The quantum wells of the second type are formed of InGaAs materials. The materials of the quantum wells of the first type include GaAsInN.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The process further comprises: withdrawing a bottom recovery liquid containing tetrachlorosilane, trichlorosilane and the catalyst from the bottom portion of the reaction column, introducing the bottom recovery liquid into the evaporation tank and recycling the catalyst recovered from the bottom portion of the evaporation tank to the reaction column; and recycling trichlorosilane as feed material toward the reaction column via a tetrachlorosilane/trichlorosilane separation column. Preferred Components: The catalyst is at least one of a tertiary aliphatic hydrocarbon substituted amine of formula (R1R2R3N) (I) or a tertiary aliphatic hydrocarbon substituted amine hydrochloride of formula (R1R2R3NH+Cl-) (II). The number of the upper condensers is 2-5. The reaction column comprises a mixing tray section between the upper feed injection point and the lower catalyst injection point, preventing liquid catalyst freezing by direct contact with cold reflux liquid.R1-R3 = at least 2C aliphatic hydrocarbon.. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The silicon type oxide is silicon dioxide. The vapor deposition layer contains zinc sulfide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The unsaturated nitrile is acrylonitrile. The non-aromatic unsaturated compound is 2-hydroxyethyl methacrylate. The unsaturated compound is methylmethacrylate. The compound (C1) is tetrabasic acid anhydride. The gas barrier film has functional groups chosen from the group which the organic functional group of silane compound becomes from amino group, vinyl group and epoxy group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The powder has median diameter of 10 mu m or less and contains 5 vol.% or less of particles with size of 60 mu m or more and 95 wt.% or more of particles of 250 mesh passage. Preferred Composition: The powder contains metal and metallic compound dispersed in carbon. The metal and metallic powder contain iron group element chosen from iron, nickel and cobalt, rare earth element chosen from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, gadolinium, terbium, dysprosium, holmium, erbium or lutetium, alkali metal chosen from sodium, potassium, rubidium, lithium and cesium, alkaline earth metal chosen from strontium and barium, and group IV element chosen from titanium, zirconium and hafnium. The hybrid plasma is direct current plasma and high frequency induction plasma or direct current plasma and microwave plasma, or 2-stage high frequency induction plasma.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of component (A) and component (B) is 20-95 weight% and 5-80 weight%, respectively with respect to total content of component (A) and component (B). The component (B) is chosen from isobornyl (meth)acrylate, dicyclopentenyl (meth)acrylate, and dicyclopentanyl (meth)acrylate. The composition further contains ethylenically unsaturated group-containing compound (C) other than component (A) and component (B). The component (C) does not contain ethylenic unsaturated compound which has polar group. The composition does not contain photoinitiator.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of arabitol is 40-90 weight% with respect to solid component of PEDOT/PSS. Preferred Condition: The heating process is performed at 100-200 degrees C for 1-5 hours.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The component (c) is glycidyl (meth)acrylate. The component (f) is styrene. The monomer (d) is silicon-containing monomer of formula: -SiX3 (I).X=hydrolysable group or hydroxyl, preferably methoxy.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The modified polyethylene resin composition further contains 0.01-10 parts weight of aromatic vinyl monomer (f). The component (a) is low-density polyethylene or linear low density polyethylene. The polyethylene-resin composition contains 0.1-100 parts weight of modified polyethylene resin composition with respect to 100 parts weight of styrene-type elastomer and/or 100-500 parts weight of modified polyethylene resin compositions with respect to 100 parts weight of tackifier. Preferred Properties: The modified polyethylene resin composition has water vapor barrier property of less than 2g/m2.day/0.4 mm, and adhesive strength with respect to aluminum is more than 35 N/25 mm width.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition also comprises: from 5000 ppb to 10 ppm of nickel (Ni); from 2000 ppb to 10 ppm of zinc (Zn); from 5000 ppb to 10 ppm of tungsten (W). The composition comprises other metal impurities such as boron (B), calcium (Ca), potassium (K), chromium (Cr), sodium (Na), niobium (Nb), titanium (Ti), manganese (Mn), cobalt (Co), tin (Sn) in a quantity comprised between 0 and 20ppm for each of them. The trialkylaluminum is selected from trimethylaluminum and triethylaluminum. In using the composition, the deposition method is an ALD method. The thin film is a film of aluminum oxide (Al2O3). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition comprises: 5000 ppb to 10 ppm of nickel, 2000 ppb to 10 ppm of zinc, and 5000 ppb to 10 ppm of tungsten; and 97-99.4% of the aluminum precursor. The composition comprises other metal impurities such as boron, calcium, potassium, chromium, sodium, niobium, titanium, manganese, cobalt, and tin, where the amount of the each impurities are present at 0-20 ppm. Preferred Components: The aluminum precursor is dimethylaluminum isopropoxide. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The metallic gas comprises magnesium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of component (B) is 5-50 parts mass with respect to 100 parts mass of component (A). Preferred Properties: The component (B) has nitrogen adsorption specific surface area of 5-180 m2/g and dibutyl-phthalate (DBP) oil absorption amount of 40-180 ml/100g.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The crosslinked fluorine rubber layer has loss modulus (E") of 1500-20000 kPa at 160 degrees C, stretching strain of 1%, initial load of 157 cN, and frequency of 10 Hz in dynamic viscoelasticity test, tensile fracture elongation of 140-700% at 160 degrees C, 110-700% at 200 degrees C or 80-700% at 230 degrees C and fracture tensile strength of 3-20 MPa at 160 degrees C or 2-20 MPa at 200 degrees C. Preferred Composition: The component (A) is vinylidene fluoride copolymer rubber, tetrafluoroethylene/perfluoro(alkylvinyl ether)-type copolymer rubber or tetrafluoroethylene/ propylene-type copolymer rubber. The fluororubber composition further contains crosslinking agent (C) and/or crosslinking adjuvant (D).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The fluid is a gas or a liquid (preferably isotropic or anisotropic liquid).    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The method further involves repeating the exposure step and the diffusion step; filling step for filling a fluid in the polymer film; and attaching a transparent conductive film on one side of the polymer film. In the method, at least two of the exposure areas of the LC-monomer mixture have different exposure times, exposure intensities, exposure periods, or diffusion periods, where an inner side of the light-permeable container is processed by a homogeneous parallel alignment process. When several polymer films are formed, the method further involves stacking the polymer films. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The cleaning liquid used for wet chemical cleaning is diluted hydrofluoric acid, RCA or buffered oxide etch. The cleaning time lasts for 3-5 minutes.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The cage-like silsesquioxane is of formula (I). The composite nanofiber is manufactured using isocyanate groups as reactive groups.R=alkyl;andR'=functional group having reactive group at terminal.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The nano-film is doped with metal element titanium dioxide film. The doped metal element comprises (in mol%) doped molybdenum (0.3), doped lanthanum (0.3), cerium (0.1) or iron (0.02) and co-doped.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The substrate material are made of nitride matrix materials such as aluminum nitride (AlN), gallium Nitride (GaN), indium Nitride (InN), aluminum gallium nitride (AlGaN), and indium gallium Nitride (InGaN), and zinc oxide matrix materials such as zinc Oxide (ZnO), indium zinc oxide (InZnO), aluminum zinc oxide (AlZnO), gallium zinc oxide (GaZnO), zirconium Oxide (ZrZnO), magnesium Oxide (MgZnO) and silicon zinc oxide (SiZnO).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The fine powder containing active magnesium is obtained by baking at least one type of magnesium ore chosen from brucite and magnesite at 800-1100 degrees C and pulverizing the powder with a particle size of 300 meshes or less. The powder comprises (in wt.%): magnesium oxide (80), and calcium oxide and calcium carbonate (20). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Metal is ruthenium (Ru), iron (Fe), osmium (Os), copper (Cu), tungsten (W), chromium (Cr), molybdenum (Mo), nickel (Ni), palladium (Pd), platinum (Pt), cobalt (Co), iridium (Ir), rhodium (Rh), rhenium (Re), manganese (Mn), and/or zinc (Zn).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: Acidic group contains a carboxyl group. Substituents Za-Ze contain pyridine ring, pyrimidine ring, pyrazine ring, pyridazine ring, pyrazole ring, imidazole ring, triazole ring, thiazole ring, oxazole ring, benzimidazole ring, benzotriazole ring, benzoxazole ring, and/or benzothiazole ring.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Components: The photoelectric conversion element further has photoreceptor layer, charge-transfer body and counter electrode that are laminated on electroconductive support body.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor fine particles are titanium oxide fine particles. Preferred Process: The composite sensitizing dye is adsorbed to semiconductor fine particle.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The dye (1) is one or more of 3 compounds, e.g. group of formulae (5)-(7). The mix ratio of quantity (R) of dye (2) with respect to quantity (S) of dye (1) is 100/1-1/1000 by molar ratio.R11,R13-R17=H, alkyl, alkoxy or aryl as substituent;R12=H or substituent;B1=methylene substituted by heterocyclic acidic nucleus or electron withdrawing group;n11=1-12;L11=electron-transport property coupling group containing thiophene ring, furan ring, pyrrole ring and /or selenophene ring as cyclocondensed heterocyclic rings;A1=5-7 membered nitrogen-containing heterocyclic ring; andX=S, O, NH or Se.That B1 has acidic group(s). That X is same or different when n11 is greater than or equal to 2. Preferred Definitions:    Mz=Ru;    B1=one or more of 6 compounds, e.g. group of formulae (8), =C(R111)-R112, =C(R113)-R114, (11), (12) or =C(CN)-COOH;    R110,R19=aliphatic group, aromatic group or heterocyclic group which may have an acidic group as functional group;    p=0-3;    R18=S;    R111-R114=CN or acidic group;    m1=1; and    R105=thiophene.    That E type or Z type may be sufficient as carbon-carbon double bond.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The ring formed of Za, Zb or Zc is chosen from group which consists of pyridine ring, pyrimidine ring, pyrazine ring, pyridazine ring, pyrazole ring, imidazole ring, triazole ring, thiazole ring, oxazole ring, benzimidazole ring, benzotriazole ring, benzoxazole ring and benzothiazole ring. The metal complex pigment is compound of formulae (4)-(8).D=group which has R, acidic group A or acidic group A; andX=X1 or X2. Preferred Definitions:    Za, Zb, Zc=acidic group A or substituent;    R=-(Y1)n1B';    Y1=-O- (Y1-1), -COO- (Y1-2), -N(Z)CO- (Y1-3), -COON(Z)- (Y1-4), -CH=CH- (Y1-5), phenylene-1,4-diyl (Y1-7) or a group of formula (Y1-6a), (Y1-6b), (Y1-6c), (Y1-7) or (Y1-8), or at least 2 of Y1-1-Y1-8 are coupled with Za, Zb or Zc;    n1= greater than or equal to 0;or    Q1=O or S;    B'=5-30C alkyl group;    Z1a, Z1b, Z1c, Z2a, Z2b, Z2c, Z3, Z4, Z5=H or 5-30C alkyl group;    BL=ligand which can be coordinated to greater than or equal to 2 metal atom or compound of formulae (BL-1)-(BL13);    R21-R30=substituent which may substitute on C of ring of (BL-1)-(BL-13) throat;    e, f, g, h, j, k,q,p=0-8;    r=0-6;    s,t=0-4;    u,v=0-3;    R1a, R1b, R2a, R2b=substituent bonded with N atom; and    M1, M2=Ru, Fe, Os, Cu, W, Cr, Mo, Ni, Pd, Pt, Co, Ir, Rh, Re, Mn and Zn.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Substrate: The substrate is sodalime glass board. Preferred Composition: The back plate contains molybdenum. The copper III group metal is indium or gallium. Preferred Process: The liquid selenium source is evaporated in presence of nitrogen or argon as carrier gas.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The liquid selenium source is dimethyl selenide, di-t-butyl selenium, methyl allyl selenium, diallylselenium, and/or di-isopropyl selenium.
TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): The preparation of (I) comprises respectively supplying heterocyclic compounds (II), (III), (IV) and (V) in the existence of catalyst and organic solvent in anaerobic environment, and processing Stille coupling reaction to obtain (I). Preferred Processes: The preparation of compound (IV) comprises condensing diketone compound, 3,4-diamine thiophene, and hydrogen chloride in molar ratio of 1:0.1-10 in the existence of the organic solvent at 0-78 degrees C for 1-24 hours, and processing brominating with N-bromosuccinimide at molar ratio of 1:0.1-10 in the existence of the organic solvent in the weak alkaline environment at 0-70 degrees C for 1-48 hours. The temperature in Stille coupling reaction is 60-140 degrees C for 24-72 hours. Preferred Components: The organic solvent in the condensation reaction comprises ethanol, carbinol and/or ethyl acetate; and the alkali in the bromination reaction at weak alkaline environment comprising chloroform and acetic acid at volume ratio of 1:0.1-10 and tetrahydrofuran. The molar ratio of compounds (II), (III), (IV) and (V) in Stille coupling reaction is k:i:m:p. The amount of catalyst in Stille coupling reaction is 0.05-40%. The catalyst is organic palladium catalyst or mixture of organic palladium catalyst and organic phosphorus ligand; the organic palladium catalyst comprises tris(dibenzylideneacetone)dipalladium(0), tetrakis(triphenylphosphine)palladium(0)4 and bis(triphenylphosphine)palladium; the organic phosphorus ligand is tri(o-tolyl)phosphine; and the organic solvent in the Stille coupling reaction comprises tetrahydrofuran, glycol dimethyl ether, benzene, chlorobenzene and/or toluene.m+p=not less than k and larger than 0;m=greater than 0;p=greater than 0;andi= not less than 0.
TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): The preparation of (I) comprises in presence of anaerobic environment, catalyst and organic solvent, carrying out Stille coupling reaction with heterocyclic compounds of formula (II), (III), (IV) and (V) to obtain (I). Preferred Processes: The preparation of compound (IV) comprises condensing diketone compound and 3,6-dibromo-o-phenylenediamine compound at mol ratio of 1:0.1-10 at 20-120 degrees C for 1-24 hours in the presence of organic solvent. The temperature in Stille coupling reaction is 50-150 degrees C for 24-72 hours. Preferred Components: The organic solvent in condensation reaction is acetic acid, m-cresol, p-toluenesulfonic acid, chloroform, methanol, ethanol and/or butanol. The mol ratio of compounds (II), (III), (IV) and (V) is k:i:m:p. The amount of the catalyst is 0.05-50%. The catalyst is organic palladium catalyst or mixture of organic palladium catalyst and organic phosphine ligand; organic palladium catalyst is tris(dibenzylideneacetone)dipalladium(0), tetrakis(triphenylphosphine)palladium(0)4 and bis(triphenylphosphine)palladium; organic phosphine ligand is tri(o-tolyl)phosphine; and the organic solvent is tetrahydrofuran, ethylene glycol dimethyl ether, benzene, chlorobenzene and methylbenzene.m+p=more than 0 and not more than k;p=more than 0;andi= not less than 0.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The catalyst is organic catalyst, at 0.01-10%. The organic palladium catalyst is mixture of organic palladium and organic phosphorus ligand, tris(dibenzylideneacetone)dipalladium(0)/tri(o-tolyl)phosphine, tetrakis(triphenylphosphine)palladium or bis(triphenyl-phosphine)palladium(II) chloride. The molar ratio of organic palladium to organic phosphorus ligand is 1:2-20. The organic solvent is N,N-dimethylformamide, tetrahydrofuran, dioxane, glycol dimethyl ether, benzene and/or methylbenzene.    TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): The preparation of (I) comprises adding naphthoic tetracarboxylate diimide dibromo compound, derivative of 2,9-bis(tri)butyl tin-naphtho(2,1-b;3,4-b') dithiophene and catalyst to organic solvent, performing Stille reaction for 24-72 hours at 50-130 degrees C under protection of inertial gas to obtain (I). Preferred Components: The molar ratio of naphthoic tetracarboxylate diimide dibromo compound to derivative of the 2,9-bis(tri)butyl tin-naphtho (2,1-b;3,4-b') dithiophene is (1-1.5):1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The non-porous sub-layer consists of zirconium oxide, titanium oxide, aluminum oxide, silicon oxide and silicon oxynitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal ion is silver, nickel, zinc, cadmium, tin and/or copper. The substrate comprises a solar cell. Preferred Method: The method further comprises monitoring the metal ion concentration in the solution with the anion selective electrode.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The thin film solar cell comprises molybdenum layer, copper indium gallium selenide (CIGS) layer, copper indium selenide (CIS) layer or copper zinc tin sulfide (CZTS) layer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The etching solution further contains complexing agent, surfactant and acid. The acid is chosen from sulfuric acid, phosphoric acid, hydrochloric acid and hexafluorosilicic acid. The complexing agent is chosen from phenol, amine, hydroxycarboxylic acid, polyalcohol, phosphonic acid and polyphosphate. The oxidant is sodium peroxodisulfate, potassium peroxodisulfate, potassium peroxomonosulfate and ammonium peroxodisulfate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The alkaline component of the alkaline etching solution consists of lithium hydroxide, sodium hydroxide, potassium hydroxide, ammonium hydroxide, quaternary ammonium hydroxides, tetraalkylammonium hydroxide, organic bases, and/or organic amines. The organic moderator of the alkaline etching solution consists of sulfuric acid alkyl esters and/or their salts, alkyl carboxylic acids and/or their salts, alkyl and alkyl benzene sulfonic acids and/or their salts, mono-and diesters of orthophosphates, fluorinated carboxylic acids, fluorinated sulfonic acids, polyalkylene glycol ethers such as fatty alcohol ethoxylates or fatty alcohol propoxylates, alkyl polyglucosides, sucrose stearic acid esters, sorbitan fatty acid esters, N-methyl glucamides, alkylphenol ethoxylates, alkyl phenol propoxylate, alkanolamides, alkynediols, substituted alkynol, ethoxylated alkynediols, fluorinated alkyl alkoxylates, alkyl betaines, amido betaines, alkyl sulfobetaines, amido alkyl sulfobetaine, alkyl amine oxides, alkyl amido alkyl amine oxides, fluorinated amphoteric alkyl compounds, alkyl amine ethoxylates, dialkyl dimethyl ammonium salts, alkyl benzyl dimethyl ammonium salts, sodium dodecyl benzene sulfonate, dodecyl dimethyl amine oxide, and/or dioctyl dimethyl ammonium chloride. The alkaline etching solution further comprises a component consisting of complexing agents for silicic acid, complexing or chelating agents for metal cations, buffer substances and/or hydrogen peroxide at very low concentrations less than 0.2 wt.%. The complexing agent comprises hydroxyphenols, amines, hydroxycarboxylic acids, polyalcohols, phosphonic acids, and/or polyphosphates. The dopant of the silicon layer is phosphorus, arsenic, boron, gallium or aluminum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor (a) is semiconductor of group of IV, preferably germanium or silicon. The semiconductor (b) is mixture semiconductor of group of III-V, preferably n-type-indium-gallium phosphide or gallium phosphide. The content of gallium in the semiconductor (b) is 49-51%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The etchant of the primary metal-containing composition is selected from ammonium fluoride, ammonium bifluoride, phosphorus acid, phosphoric acid, phosphorus trichloride, phosphorus pentachloride, phosphorus oxychloride, potassium hydroxide, hydrofluoric/nitric acid, hydrogen chloride, chlorine compounds and sulfuric acid.    TECHNOLOGY FOCUS - METALLURGY - The metal of the compositions is selected from the group comprising silver, copper, aluminum, gold, tungsten, nickel, vanadium, chrome, cobalt, ruthenium, rhodium, palladium, tin and their alloys or salt.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Zinc oxide membrane, gallium, and tin oxide thin film are provided in the transparent conductive layers.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The electrode layer has layer (2a) containing molybdenum and layer (2b) containing tungsten.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The chalcopyrite structure-containing semiconductor layer contains copper-indium-gallium selenide (Cu(InxGa1-x)Se2, where x is 0-1).
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The phosphorus acid-containing solution further contains alcohol and/or surfactant. The phosphorus silica glass contains silicon phosphide (SixPy or SixPyOz). The method further involves adding sodium hydroxide and hydrogen peroxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The silicon-hydrogen compound (III) or (IV), prior to use in step (b), is partially or completely oligomerized, where the molecular weight of the oligomerized silicon compound is adjusted to 500-10000 (preferably 1000-3000) g/mole. The coating of the substrate takes place by spin-on deposition, casting, spraying of the liquid phase, knife, roll coating or the slot. The thermal treatment is performed at 200-1000 degrees C, preferably 300-650 degrees C. The steps (b) to (d) are performed several times. Preferred Components: The dopant is a boron trihydride complex with a complexing agent comprising tetrahydrofuran, nitro-containing compound of formula (NR3) (I) or a boron compound of formula (BxCxnH2xn-x) (II), prepared by reaction of a boron trihydride-complex with a cyclic diene. The silicon compound is a silicon-hydrogen compound of formula (SinH2n+2) (III) or (SinH2n) (IV); a silicon halide; a silicon-organyl compound; and/or an oligomeric silicon compound of formula (Sin1R2n1+2) (V) or (SinR2n) (VI). The silicon-containing formulation contains solvent. In formula (I) and (II):R3 = H, alkyl, aryl or SR12;R12 = H, alkyl or aryl;x = 1-4; andn = 3-10.In formula (III), (IV), (V) and (VI):n = 3-20;n1 = 8-100; andR = H, halo or organyl.
TECHNOLOGY FOCUS - METALLURGY - The semiconductor material is selected from a group comprising silicon, gallium arsenide and silicon germanium alloys.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The gas mixture of boron gas, hydrogen gas, carbon dioxide and silane gases are flowed in deposition region.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The glass composition (C1) comprises (wt.%): silicon oxide (SiO2) (55-75); sodium oxide (Na2O) (1-8); potassium oxide (K2O) (1-9); calcium oxide (CaO) (7-12); zirconium oxide (ZrO2) (1-8); strontium oxide (SrO) (3-9); magnesium oxide (MgO) (0-5); aluminum oxide (Al2O3) (0-7); and boron oxide (B2O3) (0-3); where the total amount of Na2O and K2O is (5-12 wt.%), and the total amount of CaO, MgO and SrO is (10-24 wt.%). The glass substrate has: a strain-point over 570 degrees C; and a thermal expansion coefficient of 60-85x 10-7/ degrees C (preferably 65-80x 10-7/ degrees C). In the composition (C1): the total amount of SiO2 and Al2O3 is 60-70 wt.%; and the total amount of CaO, MgO, SrO and BaO is 15-24 wt.%.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The triazine ring-containing hyperbranched polymer further has repeating unit of formula (II) or (III). The triazine ring terminal of triazine ring-containing hyperbranched polymer is capped with alkyl group, aralkyl group, aryl group, alkylamino group, alkoxy silyl group containing alkylamino group, aralkyl amino group, arylamino group, alkoxy group, aralkyloxy group, aryloxy group or ester group. Preferred Definitions:    A=group of formula (i).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The substrate comprises glass, silicon, alumina, gallium nitride/alumina, aluminum nitride, zinc oxide, and/or silicon carbide. The zinc oxide layer includes nitrogen as dopant. Sputtering is carried out using a target containing alumina or gallium oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of silver nanoparticles in the silver nanoparticles-containing composition is 15-75 %mass. The content of ammonia component in the silver nanoparticles-containing composition is 0.1 %mass or more. The content of nitric acid component in the silver nanoparticles-containing composition is 0.1 %mass or more. Preferred Property: The primary particle mean diameter of silver nanoparticles measured by transmission electron microscope is 100 nm or less.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic acid or its derivative is 5-8C carboxylic acid or its derivative, preferably heptanoic acid or its derivative.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The silver nanoparticles-containing composition further contains polymer formed by polymerizing monomer having vinyl group, water-dispersible polymer having hydroxyl group, polyoxyethylene glycol group and/or polyethylene glycol group, and polymer with urethane bond. The polymer comprises vinyl chloride homopolymer, vinyl chloride copolymer, vinyl acetate homopolymer and/or vinyl acetate copolymer. Preferred Property: The polymer has glass transition temperature of 0-100 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of component (B) is 5-50 parts mass of with respect to 100 parts mass of component (A). Preferred Properties: The component (B) has nitrogen adsorption specific surface area of 5-180 m2/g and dibutyl-phthalate (DBP) oil absorption amount of 40-180 ml/100g.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The fluororubber composition contains crosslinking agent (C). Preferred Property: The crosslinked fluororubber substance has loss modulus (E") of 1500-20000 kPa at 160 degrees C, stretching strain of 1%, initial load of 157 cN, and frequency of 10 Hz in dynamic viscoelasticity test.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The chelating agent contains maleic acid/acrylic acid copolymer. The addition amount of chelating agent is 0.5-5 vol.%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The phenanthroline-type compound (I) is of formula (II). The compound (I) is of formula (III).R8-R19=R1;B'=1,3-phenylene, 1,4-phenylene, 1,4-naphthylene, 1,5-naphthylene or 2,7-naphthylene;andX'=methyl or t-butyl, phenyl or naphthyl (both optionally substituted).Preferred Property: The electronic extraction layer has film thickness of 0.5-10 nm.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The composition comprises the base (0.3-15 mass parts with respect to 100 mass parts of water) and the amino alcohol compound (0.01-10 mass parts with respect to 100 mass parts of water). EXAMPLE - Sodium hydroxide (2 g) was dissolved in the pure water (100 g). 2-(Ethylamino)ethanol (1 g) was mixed with the obtained solution to form the composition.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The solar cell has top electrode layer and bottom electrode layer. The substrate is made of gallium arsenide, silicon or germanium. The quantum dot layer contains indium arsenide, gallium arsenide, indium-gallium arsenide, indium-aluminum arsenide, indium-aluminum-gallium arsenide, indium antimonide, indium-gallium antimonide, indium-aluminum antimonide, indium-aluminum-gallium antimonide, indium-arsenic nitride, indium-gallium-arsenic nitride, indium-aluminum-arsenic nitride, indium-aluminum-gallium-arsenic nitride, indium-antimony nitride, indium-gallium-antimony nitride, indium-aluminum-antimonide nitride, indium-aluminum-gallium-antimony nitride, indium-arsenic phosphide, indium-gallium-arsenic phosphide, indium-aluminum-arsenic phosphide, indium-aluminum-gallium-arsenic phosphide, indium-antimony phosphide, indium-gallium-antimony phosphide, indium-aluminum-antimony phosphide and indium-aluminum-gallium-arsenic phosphide.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): An aldehyde group-containing compound of formula (II) reacts with a linear compound of formula: R11-CH2-R12 (III) to obtain optical functional material (I). Preferred Definitions:    R11=cyano;and    R12=carboxy.    SPECIFIC COMPOUNDS - 116 Optical functional materials (I) e.g. (2E)-3-(5-((E)-2-(4-((E)-2-(4-(bis(4-(2,4,4-trimethylpentan-2-yl)phenyl)amino)phenyl)ethenyl)phenyl)ethenyl)thiophen-2-yl)-2-cyanoprop-2-enoic acid of formula (IA), (2E)-3-(10-((E)-2-(4-((E)-2-(4-(bis(4-(2,4,4-trimethylpentan-2-yl)phenyl)amino)phenyl)ethenyl)phenyl)ethenyl)-3,7,11-trithiatricyclo(6.3.0.02,6)undeca-1(8),2(6),4,9-tetraen-4-yl)-2-cyanoprop-2-enoic acid, (2E)-3-(10-(5-((E)-2-(4-((E)-2-(4-(bis(4-(2,4,4-trimethylpentan-2-yl)phenyl)amino)phenyl)ethenyl)phenyl)ethenyl)thiophen-2-yl)-3,7,11-trithiatricyclo(6.3.0.02,6)undeca-1(8),2(6),4,9-tetraen-4-yl)-2-cyanoprop-2-enoic acid, (2E)-3-(10-(10-((E)-2-(4-((E)-2-(4-(bis(4-(2,4,4-trimethylpentan-2-yl)phenyl)amino)phenyl)ethenyl)phenyl)ethenyl)-3,7,11-trithiatricyclo(6.3.0.02,6)undeca-1(8),2(6),4,9-tetraen-4-yl)-3,7,11-trithiatricyclo(6.3.0.02,6)undeca-1(8),2(6),4,9-tetraen-4-yl)-2-cyanoprop-2-enoic acid and (2E)-3-(5-(5-((E)-2-(4-((E)-2-(4-(bis(4-(2,4,4-trimethylpentan-2-yl)phenyl)amino)phenyl)ethenyl)phenyl)ethenyl)thiophen-2-yl)thiophen-2-yl)-2-cyanoprop-2-enoic acid are disclosed.    EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The device further comprises a back-side conductive layer located on one side of the silicon substrate. The first insulating film comprises at least a silicon oxide layer and silicon nitride layer, where the silicon nitride layer contains the electrical charge of a first sign, and the silicon oxide film is a barrier that prevents leaking of the electric charge of a first sign to the silicon substrate. The field-induced emitter, the selective emitter, the contact region to the selective emitter, the field-induced BSF region, the selective BSF region, the contact region to the selective BSF region, the electrical charge of a first sign and the electrical charge of a second sign are formed by means of electrical and thermal treatment. The electrical charge of a first sign and the electrical charge of a second sign are charges that are formed simultaneously by mean of an electrical pulse. The contact region to the selective emitter and the contact region to the selective BSF region comprise alloys that are formed during the electrical and thermal treatment. The device comprises a front-side solar cell, where the back-side conductive layer is a back reflector. The electrical charge of a first sign and the electrical charge of a second sign are 2x 1012-5x 1012 carriers/cm2.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The content of silane compound (I) is 20-80 mol%.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The pre-baked film formed using the composition has dissolution rate of 10-1000 Angstrom /second or more in 2.38 wt.% of tetramethylammonium hydroxide aqueous solution with respect to polysiloxane (Ia). The pre-baked film formed using the composition has dissolution rate of more than 4000 Angstrom /second in 2.38 wt.% of tetramethylammonium hydroxide aqueous solution with respect to polysiloxane (Ib). The cured film has dielectric constant of 4 or less. Preferred Composition: The polysiloxane (Ia) contains 1-80 wt.% of polysiloxane (I), and 1-40 mol% of silane compound (II). The polysiloxane (Ib) is obtained by hydrolytic condensation of the silane compound in presence of a basic catalyst. The polysiloxane (Ib) contains 1-40 mol% of silane compound (II). The composition further contains hardening adjuvant which generates acid or base on heating or radiating, and crown ether. Preferred Definitions:    R=methyl.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The organic silicon-nitride compound is an open chain compound of formula: R2-(Si(-R3)(-H)-NH)x-Si(-R5)(-H)(-R4) or cyclic compound of formula (I).R2,R4=1-20C hydrocarbyl;R3,R5,R6=R1;x=n;andy=2-10.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The oxide sinter target contains aluminum and/or gallium. The translucent substrate is a glass substrate. The transparent conductive film has a surface roughness of 35 nm or more and a surface resistance of 25 Omega /square or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The P-type passivating layer comprises silicon nitride, silicon carbide and silicon dioxide and another different type passivating layer comprises aluminum oxide, titanium dioxide and hafnium oxide.
TECHNOLOGY FOCUS - ELECTRONICS - Preferred Solar Cell: In the tandem type thin film silicon solar cell, the i1 layer has a thickness of 150-500 nm. The tandem solar cell has a-SiO:H/a-Si:H structure, where the i1 layer accommodates oxygen atoms in its structure, or has amorphous silicon oxide structure.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compounds: The salt is nitrate, halogenide, hydrosulfate or carbonate. The precipitation agent is sodium hydrogen carbonate, ammonium chloride, or ammonium hydrogen carbonate. The silicon-containing agent is silica. The light source is a luminescent indium-aluminum-gallium nitride. Preferred Definitions:    A,B'=Eu2+ and/or Mn2+;    n=greater than 0.5 and 7 or less;and    x,y=greater than 0.02 and 0.2 or less.
TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Method: The method (A1) further comprises removing the UV blocking mask patterns after performing the UV lighting process. The method (B1) further comprises: performing a cutting process to cut the flexible substrate film, the release layer and the carrier substrate in sequence at where the flexible substrate film is exposed to UV light; and performing a separating step (214) to allow air to enter into an interface between the release layer and the flexible substrate film which is covered by UV blocking mask patterns and the carrier substrate, before performing the debonding step. The method (C1) further comprises: performing a cutting process to cut the flexible substrate film, the release layer and the carrier substrate in sequence at where the flexible substrate film is exposed to the UV light; and performing a separating step to allow air to enter into an interface between the release layer, which was not exposed to the UV light, and the carrier substrate, before performing the debonding step.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The release layer comprises hydrocarbon (C-H) functional group and parylene group materials, where the parylene group materials comprise substituted benzyl recurring units of formula (I), (II) or (III). The release layer, after being exposed to UV light comprises keto (C=O) functional group or hydroxy (-OH) functional group.n = greater than 20. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: In the glass substrate: the ratio of lithium oxide to the sum of the metal oxide (RO) and lithium oxide is less than 0.3, where RO is greater than 4%; and sum of zirconium dioxide, titanium dioxide, boric oxide and sodium oxide to silicon oxide is less than 0.3, where the ratio of titanium dioxide is less than 3%. The glass substrate has a liquidus temperature of less than 1090 degrees C. The chemically strengthened glass substrate has a plate thickness of 0.3-1.5 mm, a compressive layer depth of 25-70 mu m, and a compressive stress value of 400-900 MPa. Preferred Method: The method of manufacturing the cover glass further comprises applying the ion-exchange treatment to the glass substrate after performing etching. EXAMPLE - Frit material (comprised (in mass%) of silicon dioxide (62), aluminum trioxide (11.3), sodium oxide (14.5), potassium oxide (3.3), magnesium oxide (2.2), calcium oxide (3.2), zirconium dioxide (3.4) and tin dioxide (0.1)) was dissolved at 1520 degrees C, clarified at 1550 degrees C, and agitated at 1350 degrees C by using a continuous dissolution apparatus, to form the glass. Then the obtained glass was shaped into a thin plate having a thickness of 0.7, to obtain the glass substrate.
TECHNOLOGY FOCUS - METALLURGY - The absorber layer comprises cadmium telluride. The mixed phase layer comprises cadmium oxide, cadmium sulfide, cadmium sulfate and/or cadmium sulfite.
TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The photonic crystal structure is a cholesteric LC structure. The polymer film comprises at least two areas having different pitches, where at least two areas of the polymer film have different refraction indexes. The polymer film is connected to a light-permeable element. The fluid is gas or liquid, and the liquid is an isotropic liquid or an anisotropic liquid. The isotropic liquid is a solvent and/or a monomer. The monomer is capable of being polymerized. The anisotropic liquid comprises chiral LC or achiral LC. The chiral LC is cholesteric LC. The achiral LC is nematic LC or smectic LC. The polymer film in the reflective display module comprises many pixels, where each of the pixels has many sub-pixels, and pitches and/or refraction indexes of the sub-pixels are different.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The electrolyte contains lithium hexafluorophosphate, lithium tetrafluoroborate and/or lithium perchlorate.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The viscosity control solvent contains 1-ethyl-3-methylimidazolium-bis(trifluoromethanesulfonyl)imide anion (EMI+(N(CF3SO2)2)-), 1-ethyl-3-methylimidazolium-boron tetrafluoride anion (EMI+(BF4)-), 1-ethyl-3-methylimidazolium-trifluoromethanesulfonate anion (EMI+(CF3SO3)-), 1-butyl-3-methylimidazolium-bis(trifluoromethanesulfonyl)imide anion (BMI+(N (CF3SO2)2)-), 1-methyl-propylpiperidinium-(trifluoromethanesulfonyl)sulfide (MPP+(N(CF3SO2)S)-), 1-methyl-propylpiperidinium-cyanogen compound (MPP+(N(CN)2)-), butyl pyridinium-boron tetrafluoride anion (Bpi+(BF4)-) and/or butyl pyridinium bis(trifluoromethanesulfonyl)imide anion (Bpi+(N(CF3SO2)2)-). The carbonate group solvent contains propylene carbonate, ethylene carbonate, diethyl carbonate, dimethyl carbonate and/or ethyl methyl carbonate. The viscosity control solvent contains an ionic liquid. The content of viscosity control solvent is 0.333-1 volume% with respect to carbonate group solvent. Preferred Property: The viscosity control solvent has viscosity of 0.3-1.0 mPa.second.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: At least one portion of cyanide ion-containing solution is neutralized by introduction of acidic solution. Preferred Composition: The semiconductor layer or semiconductor substrate contains i-type silicon, n-type silicon, or p-type silicon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The majority of the spherically-shaped silver particles further comprises at least one silver plate with lateral dimensions of 100-2000 nm attached to each of the majority of the spherically-shaped silver particles. The first surface morphology modifier (0.02-0.25 g/g of silver) is sodium citrate, the second surface morphology modifier (0.0006-0.0024 g/g of silver) is copper nitrate, the reducing agent is ascorbic acid, and the water soluble silver salt is silver nitrate. The acidic reducing and surface morphology modifier solution further comprises a dispersing agent comprising ammonium stearate, stearate salts and/or polyethylene glycol with molecular weight of 200-8000. Preferred Process: The process further comprises separating the silver powder particles from the final aqueous solution, washing the silver powder particles with deionized water and drying the silver powder particles. EXAMPLE - Acidic aqueous silver salt solution was prepared by dissolving silver nitrate (80 g) in deionized water (250 g). This solution was kept at 25 degrees C while continuously stirring. Acidic reducing and surface morphology modifier solution was prepared by adding and dissolving ascorbic acid (45 g) to deionized water (750 g) in a separate container from the silver nitrate solution. This solution was kept at 25 degrees C while continuously stirring. Nitric acid (20 g) was then added to the solution followed by the addition of sodium citrate (10 g) and copper nitrate (0.06 g). After both solutions were prepared, the acidic aqueous silver nitrate solution was added to the acidic reducing and surface morphology modifier solution without any additional agitation or stirring in less than 5 seconds to make a reaction mixture. After 5 minutes, the reaction mixture was stirred for 3 minutes. The reaction mixture was filtered and the silver powder collected.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The aromatic solvent comprises alkoxybenzenes, alkylbenzenes, tetralins and/or derivatives.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The monomer of the conductive polymer comprises pyrroles, thiophenes, anilines and/or derivatives. The pi conjugated conductive polymer comprises a constituent consisting of alkyl group, carboxylic group, sulfonate group, alkoxyl group, hydroxyl group and cyano group.
TECHNOLOGY FOCUS - POLYMERS - The step layer is photo-curable resin, reactive curable resin and thermal curable resin.
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Composition: The negative charge generates an inversion layer at the semiconductor surface, when the semiconductor surface is n-type. The negative charge repels minority carriers from the semiconductor surface, when the semiconductor surface is p-type.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The titanium dioxide layer contains mixture of amorphous titanium dioxide and anatase crystals. The titanium oxide layer is titanium dioxide. The semiconductor surface is silicon surface, which is portion of a solar cell or photodetector.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Fluid: The cutting fluid comprises the surfactant (0-20 wt.%) that induces hydrogen bonding. Preferred Components: The cutting particles are made from silicon carbide, copper oxide, cuprous oxide, silicon oxide, aluminum oxide, zirconium oxide and titanium-copper oxide. The cutting particles are microparticles or nanoparticles. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameter: The first passivation region has a thickness of 1-10 nm. The first passivation region has a fixed charge, where the first passivation region is positioned on an incident of the substrate and the fixed charge of the first passivation region is a polarity opposite a conductive type of the substrate, where the first passivation region has a thickness of 3-20 nm. The fixed charge of the first passivation region has a magnitude of 1 x 1012 to 1015/cm2. The emitter region is positioned on a first surface opposite a second surface of the substrate, the second surface being an incident surface of the substrate, on which light is incident. The solar cell further comprises a surface field region of the non-crystalline semiconductor positioned on the first surface of the substrate to be spaced apart from the emitter region, the surface field region containing an impurity of a conductive type equal to a conductive type of the substrate. The solar cell further comprises a second passivation region having a first passivation portion positioned between the substrate and the emitter region and a second passivation portion positioned between the substrate and the surface field region, where each of the first and second passivation portions has a thickness of 1-10 nm. Each the first and second passivation portions has a fixed charge, where the fixed charge of each of the first and second passivation portions has a magnitude of 1 x 1012 to 1015/cm2, respectively, and each of the first and second passivation portions has a thickness of 3-20 nm. Preferred Component: The first passivation region is made of silicon oxide, aluminum oxide or zinc oxide. When the substrate is of a p-type, the first passivation region is made of aluminum oxide, and when the substrate is of an n-type, the first passivation region is made of silicon oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The lower solar cell is comprised of organic solar cell, dye solar cell, gallium arsenide solar cell and cadmium telluride solar cell.
TECHNOLOGY FOCUS - METALLURGY - The P-type layers and intrinsic layers are made of amorphous silicon germanium, microcrystalline silicon or germanium.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The first photoelectric conversion layer is formed of amorphous silicon (a-Si). The second photoelectric conversion layer is formed of amorphous silicon-germanium (a-Si:Ge). The third photoelectric conversion layer is formed of microcrystalline silicon ( mu c-Si) or microcrystalline silicon-germanium ( mu c-Si:Ge). The TCO is one selected from tin oxide (SnO2), zinc oxide (ZnO) and indium tin oxide (ITO).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameter: A thickness of the ultra-thin conductive layer is equal to or greater than 2 nm, and is equal to or less than 20 nm. When temperature increases to or over 30 degrees C, transmittance of the temperature dependent optical layer to the infrared light is reduced. When temperature drops to or below 20 degrees C, transmittance of the temperature dependent optical layer to the infrared light is increased. Preferred Component: The ultra-thin conductive layer is made of transition metals, where the transition metals include nickel (Ni), silver (Ag), or aluminum (Al). The temperature dependent optical layer is made of vanadium oxide or a compound of vanadium and oxygen. The temperature dependent optical layer is doped with titanium (Ti), Ag, or copper (Cu).
TECHNOLOGY FOCUS - METALLURGY - The tetravalent metallic oxide contains a metallic element selected from Tin (Sn), titanium (Ti), silicon (Si), germanium (Ge), zirconium (Zr) and cerium (Ce).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The passivation layer further has 1-50% of alumina-doped silica layer or silica-doped alumina layer. The aluminum-silicon oxide (AlSiOx) layer has sub-layer and silicon nitride layer.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The polymaleimide compound is a bismaleimide compound having a molecular weight of 250-600. The bismaleimide compound is of formula (I), preferably phenylenebis maleimide or methylphenylenebis maleimide. The content of polymaleimide compound is 5-200 parts mass with respect to 100 parts mass of polyimide resin.R3=single bond or methylene;R4=H or 1-6C alkyl;andn=0-4.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polyimide resin further has a benzophenone structure and a tolylene structure, and does not have an alkylene structure. The content of biphenyl skeleton in the polyimide resin is 20-45 %mass. The resin composition has a logarithmic viscosity of 0.1-0.9 dl/g. The polyimide resin is obtained by reacting a polyisocyanate having biphenyl skeleton, with an acid anhydride. The polyisocyanate is tolidine diisocyanate or is derived from tolidine diisocyanate. The resin composition further contains an epoxy resin (5-200 parts mass with respect to 100 parts mass of polyimide resin) chosen from bisphenol-A epoxy resin, bisphenol-F type epoxy resin, bisphenol-S type epoxy resin, biphenyl type epoxy resin, and naphthalene type epoxy resin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The solvent is N,N-dimethylformamide. The tertiary amine is 3,5-diethyl ( beta )-picoline, isoquinoline or pyridine. The amount of phosphate ester with respect to solid content of polyamic acid is 0.3-30 wt.%. Preferred Definitions:    R1=group of formula (a)-(e);    R2=bivalent biphenylene group of formula (f);and    R3=1-16C alkyl, 1-16C halo alkyl or halo.
TECHNOLOGY FOCUS - POLYMERS - Preparation: No general preparation given. Preferred Units: The high-molecular compound further contains a triamine-containing repeating unit of formula (II), a fluorene-containing repeating unit of formula (III), and a triarylamine-containing repeating unit of formula (IV). Unit (I) is preferably of formula (V). The high-molecular compound has a weight average molecular weight of 3x 103-1x 108 by polystyrene conversion.R'a=alkyl;Ar3-Ar6=bivalent heterocyclyl or arylene (both optionally substituted);Ar7-Ar9=monovalent heterocyclyl or aryl (both optionally substituted);x,y=0 or positive integer;andR'c,R'd=optionally substituted alkyl. EXAMPLE - (In g) 2-(7-(1,3,2-dioxaborinan-2-yl)-9,9-dioctyl-9H-fluoren-2-yl)-1,3,2-dioxaborinane (2.63), 2,7-dibromo-9,9-bis-(4-hexyloxy-phenyl)-9H-fluorene (3.38), Aliquot 336 (RTM: methyltrioctylammonium chloride) (0.65), and toluene (50 ml) were taken in a flask. Palladium acetate (1.8 mg) and tris(2-methoxyphenyl)phosphine (13.1 mg) were added in nitrogen atmosphere and heated at 85 degrees C. The contents were stirred for 1.5 hours after heating at 105 degrees C, while 17.5 wt.% sodium carbonate aqueous solution (9.8) was dripped. T-Butylphenyl boric acid (89 mg) dissolved in toluene (2.5 mL) was added and stirred at 105 degrees C for 2 hours. Sodium N,N-diethylthiocarbamate trihydrate (3) and ion-exchange water (30 mL) were added and stirred at 65 degrees C for 2 hours. The organic layer was separated, washed with ion-exchange water (65 mL), added to tetrahydrofuran (400 mL), and dripped in methanol. A polymer (4.47) was precipitated, filtered and dried. The polymer had a number average molecular weight of 1.1x 105 and a weight average molecular weight of 3.1x 105 by polystyrene conversion. A light-emitting element obtained using the polymer had a light-emission start voltage of 4.5 V, a maximum luminous efficiency of 2.84 cd/A, maximum brightness at 12.2 V, and a maximum brightness of 3090 cd/m2.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The reducing agent is an organic substance reducing agent. The fluoride solution containing silver is fluorinated silver solution.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The dispersion medium is organic solvent, and has specific resistance of 5x 107 Omega .cm or more and dielectric strength of 30 kV/2.5 mm or more. Preferred Material: A metal plate is provided, such that it space apart with one electrode (20) and contact to other electrode (22) and insulator between electrodes for barrier electrodischarge treatment.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Materials: The glass frit comprises lead oxide, zinc oxide, silicon dioxide, boron oxide, bismuth oxide, barium oxide, and/or sodium oxide. The passivation film comprises aluminum oxide.    TECHNOLOGY FOCUS - METALLURGY - Preferred Materials: The protective layer comprises copper, palladium, iridium, and/or their alloy or oxide. The alloy comprises copper-aluminum alloy, palladium-aluminum alloy, and/or iridium-aluminum alloy.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The compound (B) is of formula (I).R1-R3=H, optionally branched 1-18C alkyl or alkyl ester of formula: -CH(-R4)-C(=O)OR5;R4=H or methyl;andR5=optionally branched alkyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polymer (A) contains 1-20 %mass of monomer having triazole skeleton.
TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Material: The wool material consists of alumina fiber, silica fiber, or alumina silicate fiber. The wool material has a density of 1-100 kg/m3 and a thickness of 3-50 mm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The amount of zinc is 2-5 mol per 1 mol of tetrachlorosilane. Preferred Process: The tetrachlorosilane is heated in presence of catalyst chosen from gold, silver, copper, platinum, palladium, nickel, iron, aluminum, gallium, indium, germanium, tin and lead, and silicon.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The substrate contains common glass or toughened glass. The transparent conductive layer contains a zinc oxide-based transparent conductive glass doped with boron, aluminum and/or germanium, or tin dioxide-based transparent conductive glass doped with fluorine, aluminum and/or germanium. The rough surface comprises rough portion (121) and smooth portion (122) arranged alternately. Preferred Properties: The rough portion has width of 5-30 mm. The smooth portion has width of 0.1-2 mm. The substrate, sodium ion-blocking layer, and transparent conductive layer have thickness of 2-8 mm, 20-200 mm, and 500-1500 mm, respectively.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The sodium ion-blocking layer comprises tin dioxide, alumina and titanium dioxide, or silica, alumina and titanium dioxide. The total content of alumina and titanium dioxide in sodium ion-blocking layer is more than 0 to 1 wt.% or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The ion is obtained by ionizing hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, krypton, silicon compound, and/or hydrocarbon.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The gas-barrier layer is a layer containing polysilazane type compound and acrylic resin, and has a water vapor permeation rate of 1 g/m2/day or less at 90% relative humidity. The layer obtained by injection of ion into the layer is formed by plasma ion implantation, conveying the elongate molding in a fixed direction. Preferred Composition: The content of acrylic resin is 0.1-70 %mass with respect to the total amount of polysilazane compound and acrylic resin. The polysilazane compound is perhydropolysilazane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The non-conductive component is obtained using alumina or silicon carbide.
TECHNOLOGY FOCUS - MECHANICAL ENGINEERING - Preferred Components: The upper surface of the partition unit is made to incline from inner side, so that it may lower toward the outer side, and the inside surface of partition unit is made to follow the inside surface of the cooling crucible without a level difference. Partition unit is composed of silicon, silicon carbide (SiC), quartz, alumina, or carbon.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The concentration of aluminum in square silica container is 5-500 wt.ppm. The hydroxyl group concentration in square silica container is 5-500 wt.ppm. The concentration of lithium, sodium and potassium in the square silica container are 5 wt.ppm or less. The concentration of titanium, chromium, iron, nickel, copper, zinc, and gold are 0.1 wt.ppm or less. The square silica container further has mold release promoter. The mold release promoter stimulates mold release of the polycrystal silicon ingot in inner surface portion of the square silica container. The mold release promoter is calcium, strontium and/or barium. The total concentration of calcium, strontium and/or barium is 50-5000 mu g/cm2, or 50-5000 wt.ppm with respect to total value of each element at depth of 2 mm from the inner surface of the square silica container. Preferred Properties: The bulk density of the porous silica plate is 1.6-2.2 g/cm3. The bulk density of the surface portion of both the parallel flats of the porous silica plate has difference of 0.05 g/cm3 or more about the bulk density which sets at depth of 3 mm from each internal and external surface.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Components: Raw material inlet tube is positioned with an inclination angle ( theta ). Inner surface of raw material inlet tube is covered by silicon material.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: Heat-resistant board contains quartz. Preferred Forms: Heat-resistant board is opaque.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): No general preparation given. Preferred Composition: The electroactive compound (10% or more) is deuterated. The dopant is chrysene derivative. Preferred Property: The dopant has deep blue emission. Preferred Definitions:    Ar1-Ar2=phenyl, biphenyl, naphthylphenyl, naphthylbiphenyl, terphenyl, or quaterphenyl;    R2=H, D, alkyl, alkoxy, siloxane or silyl;    or adjacent R2=aromatic ring;    m=1-6;    Ar3=group of formula (i);    E=single bond, C(R3)2, O, Si(R3)2, or Ge(R3)2;    R3=alkyl or aryl;and    or adjacent two R3=non-aromatic ring.    SPECIFIC COMPOUNDS - 17 electroactive compounds e.g. 2-methyl-1-(2-methyl-4-(4-(naphthalen-2-yl)phenyl)naphthalen-1-yl)-4-(4-(naphthalen-2-yl)phenyl)naphthalene of formula (Ia), 2-hexyl-1-(2-hexyl-4-(4-(naphthalen-2-yl)phenyl)naphthalen-1-yl)-4-(4-(naphthalen-2-yl)phenyl)naphthalene, 1-(3-(naphthalen-1-yl)phenyl)-4-(4-(3-(naphthalen-1-yl)phenyl)naphthalen-1-yl)naphthalene, 5-(4-(4-(4-(naphthalen-1-yl)phenyl)naphthalen-1-yl)naphthalen-1-yl)benzene-1,3-dicarbonitrile, and 1-(3-(naphthalen-1-yl)phenyl)-4-(4-(4-(naphthalen-1-yl)phenyl)naphthalen-1-yl)naphthalene are disclosed.    EXAMPLE - (In g) 4,4'-dibromo-2,2'-dimethyl-1,1'-binaphthyl (4.4), 4-(naphthalen-1-yl)phenylboronic acid (5.21), sodium carbonate (30 ml), toluene (120 ml) and Aliquat (0.5) were stirred under nitrogen atmosphere for 20 minutes, and tetrakis(triphenylphosphine) (462 mg) was added, stirred under nitrogen atmosphere for 15 minutes, heated at 95 degrees C for 18 hours, cooled, filtered, dried and recrystallized to obtain 2-methyl-1-(2-methyl-4-(4-(naphthalen-2-yl)phenyl)naphthalen-1-yl)-4-(4-(naphthalen-2-yl)phenyl)naphthalene.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The p-layer and n-layer have thickness of 10-40 nm, and 20-50 nm, respectively. The purity of silane in reaction gas is 99.8-99.99%. Preferred Process: The trimethylboron and phosphine are diluted by hydrogen.
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preferred Method: The method also comprises making grown algae of as raw material for anaerobic fermentation. The electricity of microorganism fuel device is used for illuminating system power needed for illuminating biological reactor. Preferred Component: The algae comprises Chlorella vulgaris of chlorophyta.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The pigment is chosen from titanium dioxide, magnesium oxide, barium sulfate and alumina. The filler has average particle diameter of 5-40 mu m. The filler is chosen from fused silica and molten spherical silica.    TECHNOLOGY FOCUS - POLYMERS - Preferred Compound: The thermosetting organopolysiloxane (A) is of formula: (CH3)aSi(OR1)b(OH)cO(4-a-b-c)/2.R1=1-4C monovalent hydrocarbyl;a=0.8-1.5;b=0-0.3;c=-0.001-0.5;anda+b+c=0.801 or more and less than 2.Preferred Composition: The total number of moles of alkenyl group with respect to total number of moles of organic group coupled with silicon atom in organopolysiloxane (B) is 0.5-5 mol%. The silicone resin composition further contains pigment (3-400) having average particle diameter of 0.05-10 mu m, filler (400-1500) and organometallic catalyst with respect to thermosetting organopolysiloxane (100).
TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Components: Source gas is derived from fossil fuel, biomass, or waste material.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The dielectric structure includes one or combination of silicon dioxide, titanium dioxide, aluminum oxide and silicon nitride.    TECHNOLOGY FOCUS - METALLURGY - The contact electrode contains one or combination of nickel, silver, aluminum, copper and palladium. The barrier layer is made of titanium, tungsten or molybdenum.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The compound having sulfur or selenium is of formula: R1R2N-C(=X)-NR3R4. The metallic compound particles contain group VIB element, preferably copper-indium-gallium-selenium alloy of formula: CuInxGa1-xSe2, silver-indium-gallium-selenium alloy of formula: AgInxGa1-xSe2, copper-indium-gallium-selenium-sulfur alloy of formula: CuInxGa1-x(SeyS1-y)2, copper-zinc-tin-selenium-sulfur alloy of formula: Cu2ZnSn(SexS1-x)4 or copper-aluminum-selenium-sulfur alloy of formula: CuAl(SexS1-x)2 or copper-selenium-sulfur alloy of formula: Cu2-xSe1-ySy, indium-gallium-selenium-sulfur alloy of formula: (InxGa1-x)2(Se1-ySy)3, or indium-gallium-selenium-sulfur alloy of formula: InxGa1-xSe1-ySy, or copper-selenium alloy of formula: Cu2-xSe, or indium-selenium-sulfur alloy of formula: In2(SexS1-x), or copper-tin-selenium-sulfur alloy of formula: Cu2-xSn2-y(Se1-zSz)2 or copper-zinc-selenium-sulfur alloy of formula: Cu2-xZn2-y(Se1-zSz)2, or copper-selenium-sulfur alloy of formula: Cu2-xSe1-ySy, zinc-selenium-sulfur alloy of formula: Zn2-xSe1-xSx or tin-selenium-sulfur alloy of formula: Sn2-xSe1-ySy.R1-R4=H, 1-10C alkyl or aryl;x-z=0-1;andX=sulfur or selenium.Preferred Property: The average particle diameter of metallic compound particles is 1-200 nm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The junction partner layer is composed of cadmium sulphide and the solution is composed of cadmium, zinc, mercury, manganese and magnesium.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The amount of alkyl sulfonic acid anion with respect to 100 parts mass of water is 0.001-10 parts mass. The composition further contains silicate (0.1-10 parts mass) and antifoamer (0.01-5 parts mass) with respect to water (100 parts mass). The composition and silicon substrate surface are contacted at 50-100 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The indium salt is indium nitrate, indium chloride and/or indium triflate. The liquid precursor has indium concentration of 0.1-0.5 M. The deposited solid precursor is thin film of indium selenide or elemental selenium.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Process: The nitrogen-containing agent reduces 50% of elemental selenium. The elemental selenium and at least one nitrogen-containing agent are contacted in presence of non-nitrogen-containing solvent. Preferred Composition: The nitrogen-containing agent contains hydrazine, primary amine and/or secondary amine, preferably ethylene diamine, pyridine, ethanolamine, diethylenetriamine and/or N-methylimidazole. The non-nitrogen-containing solvent is glycol. The solution of indium salt comprises solvent chosen from alcohol, glycol, water, dimethylformamide, primary amine and secondary amine. The solvent for indium salt is methanol, ethanol, butanol, ethylene glycol and/or dimethylformamide. The liquid precursor comprises solute comprising indium and selenium, and hydrazine-free solvent, and has molar ratio of indium and selenium of 1:1-2:3. The hydrazine-free solvent is alcohol, glycol, dimethylformamide, water, primary amine and/or secondary amine.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The mass ratio of conductive fiber and component other than conductive fiber in conductive layer is 0.1-5. The conductive fiber comprises metal nanowire containing alloy with metal other than silver and silver. Preferred Properties: The electroconductive material has half value width in absorption peak at wavelength of 320-390 nm of 100 nm or less, preferably 20-70 nm. The conductive layer has ratio of peak top light absorbency at wavelength of 325-390 nm, light absorbency at wavelength of 800 nm of 1.5 or more, surface resistance of 0.1-5000 Omega /square and total visible light transmittance of 85% or more. The metal nanowire has average short-axis length of 50 nm or less and average long-axis length of 2 mu m or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The oxygen ion conductive material is selected from a group comprising impure zirconia and gadolinium oxide (Gd2O3) doped cerium oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The porous support is baked for 50-500 hours. Preferred Property: The deoxygenated film has film thickness of 10-50 mu m. Preferred Definitions:    M=Ni.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The semiconductor fine particles are titanium oxide fine particles.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The dye which has structure (1) is of formulae (5) or (D)n-CH=C(Y1)-Y2. The dye which has structure (5) is one or more of 4 compounds, e.g. group of formulae (7)-(10). The dye which has structure (7) is of formula (11). The dye which has structure (10) is of formula (12).A=atomic group required to form ring with carbon-nitrogen bond;Y1-Y3=acidic group;L=single bond or bivalent coupling group;LL=alkenylene, alkynylene or arylene as bivalent coupling group which may have a substituent;R,R1-R3=heterocyclic group coupled with H, aliphatic group, aromatic group or C; andB=atomic group required to form a ring with two carbon atoms and nitrogen atom on benzene ring.That only one side of Y1 and Y2 is acidic group while other side is electron attractive group. That R1 and R2 may form a ring with substituent on LL. Preferred Definitions:    Mz=Ru;    X=monodentate or bidentate ligand coordinated by acyloxy, acylthio, thio acyloxy, thio acylthio, acylaminoxy, thiocarbamate, dithiocarbamate, thiocarbonate, dithiocarbonate, trithiocarbonate, acyl, thiocyanate, isothiocyanate, cyanate, isocyanate, cyano, alkylthio, arylthio, alkoxy, aryloxy, halo, carbonyl, dialkyl ketone, 1,3-diketone, carbonamide, thiocarbonamide or thiourea;    R101,R102=sulfonic acid group, hydroxyl group, hydroxamic acid group, phosphoryl group, phosphonyl group or preferably carboxyl group as acidic group; and    Y1-Y3=sulfonic acid group, phosphonic acid group, phenolic hydroxyl group, alkyl sulfonyl carbamoyl group, phosphoric acid group or preferably carboxylic acid group as acidic group.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconductor fine particles are titanium oxide fine particles. The composite sensitizing dye is adsorbed to the semiconductor fine particles. The photoelectric conversion element has the photoreceptor layer, a charge-transfer body and a counter electrode laminated on an electroconductive support.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of metal ion with respect to support after desalinating is 0.001-10 parts mass with respect to 100 parts mass of support. The ratio of mass of metal particles added to the suspension liquid (a) with respect to mass of metal ion supported by the support is 0.0001-0.005. The group IV is transition metal element is chosen from titanium, vanadium, chromium, manganese, iron, cobalt, nickel and copper. The group V transition metal element is chosen from zirconium, niobium, molybdenum, ruthenium, rhodium, platinum, palladium, technetium and silver. The content of metal particles contained in the metal-particle supported catalyst is 40-99.9 %mass. The support is inorganic-type support or organic-type support. The inorganic-type support or organic-type support contains elements chosen from silicon, aluminum, carbon, titanium, zirconium and cerium, or tin oxide, antimony-doped tin oxide, tin-oxide-doped indium oxide, antimony pentoxide, tungstosilicic acid, phosphor-doped tin oxide and/or aluminum-doped zinc oxide. Preferred Process: The drying process is carried out under inert atmosphere.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The agent comprises (in % mass): molybdenum (50-95, based on conversion to nickel oxide), and nickel (0.5-25, based on conversion to molybdenum oxide). EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): Aldehyde or ketone compound of formula (II) and active methylene compound of formula (III) are reacted in presence of piperidine, to obtain indol-type compound. Preferred Composition: The p-type organic-semiconductor material is poly(3-hexylthiophene). The n-type organic-semiconductor material is fullerene derivative. Preferred Definitions:    R1,R2=1-40C alkyl optionally substituted by halo, cyano, nitro, hydroxy, or thiol, or 6-40C -Ar1-B'-H;    Ar1=Ar;    B'=direct bond or groups chosen from group of formulae (i)-(ix);    Y'=-S-, -O-, or -NR"-;and    R"=H, 1-20C alkyl, or 6-20C aryl, in which H is optionally substituted by halo, cyano, nitro, hydroxy, thiol, or optionally substituted alkyl.    SPECIFIC COMPOUNDS - 41 indol-type compounds e.g. (2E)-2-(1,3-benzothiazol-2-yl)-3-(4-(diphenylamino)phenyl)prop-2-enenitrile of formula (Ia), (2E)-2-(1,3-benzoxazol-2-yl)-3-(4-(diphenylamino)phenyl)prop-2-enenitrile, (2E)-2-(1H-1,3-benzodiazol-2-yl)-3-(4-(diphenylamino)phenyl)prop-2-enenitrile, (2E)-2-(1,3-benzothiazol-2-yl)-3-(4-(bis(4-ethylphenyl)amino)phenyl)prop-2-enenitrile and (2E)-2-(1-phenyl-1H-1,3-benzodiazol-2-yl)-3-(4-(piperidin-1-yl)phenyl)prop-2-enenitrile.    EXAMPLE - (In mmol) 4-(diphenylamino)benzaldehyde (20), 2-benzothiazole acetonitrile (20), and anhydrous piperazine (4) were dissolved in solvent, heated at 60 degrees C for 6 hours, filtered and recrystallized to obtain (2E)-2-(1,3-benzothiazol-2-yl)-3-(4-(diphenylamino)phenyl)prop-2-enenitrile.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Layer: The photoreceptor layer further contains a pigment of formula: Mz(LL1)m1(LL2)m2(X)m3.Cl' (II).Mz=metal atom;LL1=bidendate or tridendate ligand of formula (ix);LL2=bidendate or tridendate or ligand of formula (x);X=monodendate or bidendate ligand other than LL1 and LL2;m1,m2=0-3;m3=0-2;Cl'=counter-ion capable of neutralizing the electric charge in the bipyridine-type pigment;R101,R102=carboxy, sulfonic acid group, hydroxy, hydroxamic group, phosphoryl or phosphonyl;R103,R104=substituent;R105,R106=alkyl, aryl or heterocyclyl;d1,d2=0 or more;L1,L2=conjugated chain;a1,a2,b1,b2=0-3;adjacent R103,R104=ring;d3=0 or 1;Za-Zc=nonmetallic atom group capable of forming 5- or 6- membered ring, and optionally containing acidic group;andc=0 or 1. EXAMPLE - 6-(4-Hexyl-5-(4-hexyl-5-(4-hexyl-5-(4-hexylthiophen-2-yl)thiophen-2-yl)thiophen-2-yl)thiophen-2-yl)naphthalene-2,3-dicarbonitrile was reacted with 4'-acetyl-1,1'-biphenyl-3,4-dicarbonitrile in presence of lithium chloride (7.5 equivalent), n-butyl alcohol, and 1,8-diazabicyclo(5.4.0)undec-7-ene (9 equivalent) at 110 degrees C for 5 hours to obtain an intermediate compound. The obtained intermediate compound was reacted with zinc acetate, and reacted at 90-110 degrees C to obtain metal complex dye (I).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The precursor solution is mixed solution of nickel ion and copper ion. The nickel ion is obtained from nickel nitrate. The copper ion is obtained from copper nitrate. Preferred Process: The activated carbon is dried at 100-120 degrees C for 1-2 hours to remove adsorbed water and gas, then immersed into precursor solution and processed. Saturated solution is prepared by dissolving and uniformly agitating deionized water and chemicals, dried activated carbon (1-1.5 g) is added into 5 ml of prepared saturated solution, and agitated for 1-2 hours. Resultant product is placed in heating furnace, roasted to decompose into copper oxide and nickel oxide, heat is maintained for 1-2 hours at 500-600 degrees C, and copper oxide, nickel oxide and activated carbon are subjected to reduction reaction in presence of carbon powder to generate simple substance e.g. metal copper and nickel, continuously heated to 1500-1600 degrees C on basis of generated metal simple substance, and heat is maintained for 1-2 hours. Alloy is formed using the simple substance, and by reproducing porous structure of activated carbon.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The olefin-based organic phosphonic acid is phosphonic acid, ethylene phosphonic acid, acrylic acid or acrylic acid. The molar ratio of chloro auric acid with respect to olefin-based organic phosphonic acid is 1:0.5-7. The pH of chloro auric acid is 3-12.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The silicon sheet is cleaned using acetone, and solution containing hydrofluoric acid, nitric acid, absolute ethyl alcohol and water in the volume ratio of 3:5:3:22. The silicon sheet is (100) or (100) oriented single crystal silicon sheet.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The reactant of hydrocarbon is ethanol, propanol, butanol, methyl ethyl ether, formaldehyde, propenone or tartar.
TECHNOLOGY FOCUS - BIOTECHNOLOGY - Preferred Enzyme: The laccase enzyme has (a) molecular weight of 63 kDa as measured by sodium dodecyl sulphate-polyacrylamide gel electrophoresis (SDS-PAGE), or 58.33 kDa as measured by MALDI-ToF method, (b) isoelectric point (pI) of 3.5, (c) specific activity of 347 IU mg-1 or 5784 nkatal mg-1 against ImM ABTS in 50 raM Mcllvain buffer, pH of 4.0 at 30 degrees C, and 6380 IU mg-1 or 10635 nkatal mg-1 using 0.02 mM syrigaldazine in 50 mM Mcllvain buffer, pH 5.5 at 30 degrees C, and (d) N-terminal amino acid sequence having SEQ ID NO: 1. The enzyme functions at pH 2.5-8.5, preferably at pH 3-5.5. The enzyme is effective in dye degradation treatment at 30-70, preferably at 35-50 degrees C. Sequences not defined here may be found at ftp://ftp.wipo.int/pub/published_pct_sequences/publication. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Properties: The glass has liquidus temperature of 1100 degrees C, liquid phase viscosity of 104 dPa/second or more. The compressive-stress layer has compressive stress of 100 MPa or more and thickness of 1 mu m or more. Preferred Composition: The glass comprises (in %mass) sodium oxide (1-20), mixture (0-3) of strontium oxide and barium oxide, silica (50-80), alumina (2-20), boron trioxide (0-15), lithium oxide (0-1), potassium oxide (0-10), mixture (0-5) of magnesium oxide, calcium oxide, strontium oxide and barium oxide, and mixture (0-5) of zirconium oxide and titania. The mass ratio of total content of lithium oxide and potassium oxide with respect to sodium oxide in the glass is 0-0.5 %mass.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polymethacrylate has silsesquioxane-containing unit of formula (I) in side chain. The polymethacrylate containing silsesquioxane is block copolymer or graft copolymer synthesized using siloxane-containing monomer of formula (II). The polystyrene derivative styrene-terminal polyethylene-oxide macromer synthesized using silicon-containing compound of formula (III).R=H, optionally substituted alkyl, aryl or aralkyl.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The film has visible-light transmittance of 85% or more at wavelength of 400-800 nm.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The amount of antimony trioxide contained in glass in outside-hooking with respect to total amount of other component (excluding iron oxide) is 0.1-0.5 %mass. The amount of iron oxide with respect to total amount of other component (excluding antimony trioxide) is 0.01-0.04 %mass. The amount of alkali metal element precipitated on the glass surface is 300 nmol/cm2, at 120 degrees C and pressure of 0.2 MPa. Preferred Properties: The outdoor-type glass tube has average permeability of 91% or more in 1 mm thickness at 450-1000 nm, permeability of 90% or more in 1 mm thickness at 400 nm, linear expansion coefficient of 85-110x 10-7/ degrees C, melt viscosity of 10-2 dPa.second or less at 1500 degrees C, density of 2.6 g/cm3 or less and glass transition temperature of 520 degrees C or more.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The glass fiber is E glass.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The polyfunctional (meth)acrylate monomer has a triazine skeleton or pentaerythritol skeleton. The monomer having triazine skeleton is of formula (I). The bismaleimide compound is of formula (II).R1-R6,R21-R24=H or methyl;n,o,p=1 or 2;andR25,R26=H, methyl or ethyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The cured material of the curable composition has a glass transition temperature of 220 degrees C or more. The transparent composite sheet has a light transmittance of 85% or more at 550 nm, an average linear expansion coefficient of 20 ppm/ degrees C or less at 50-200 degrees C, and a thickness of 25-200 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The nanorods consist of zinc oxide, titanium oxide, magnesium oxide, zinc-magnesium oxide. The TCO layer consists of fluorine-doped tin oxide (FTO), indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The seeding layer of the metal complex is applied to the substrate by dip-coating or spin-coating onto the substrate of a film of a solution of the metal complex and removing the solvent by evaporation. Preferred Components: The metal complex is a nickel complex, palladium complex, platinum complex, titanium complex, or gallium complex, preferably nickel formate, palladium acetate, platinum acetonylacetate, titanium diisopropoxide bis(tetramethyl)heptanedionate, or gallium (III) acetonylacetate. The metal complex seeding layer on the substrate is a very thin seeding layer and the silicon is grown in the form of moncrystalline nanowires. The metal complex seeding layer on the substrate is thicker than the seeding layer, and the silicon is grown in the form of monocrystalline columns, or polycrystalline silicon. The growth temperature in the method is 500 degrees C or below, preferably 300 degrees C. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Oxide: The inorganic oxide is chosen from silicon dioxide, alumina and silica-alumina.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Disclosed): Preparation of (I) comprises: reacting substituted alpha , alpha -difluorosulfonic acid compounds of formula (R1a-O-C(=O)-CF2-SO2F) with Grignard reagents of formula (R2a-D1-MgX3) to give substituted difluoro-ketone compounds of formula (R2a-D1-C(=O)-CF2-SO3H), representative of (I).R1a = alkyl, aryl, cycloalkyl, heteroaryl or their fluoro or perfluoro analogs;R2a = alkyl, alkenyl, alkynyl or their 1-32C fluoro or perfluoro analogs; andX3 = Cl, Br or I.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The copolymer: has a weight average molecular weight of less than or equal to 500 kg/mol; and comprises at least three monomer units. The polymer blend comprises a blend of at least two different sulfonated polyelectrolytes, each comprising 5-95 wt.% of the blend. The matrix polymer is: fluorinated; and comprises a poly(vinylidene fluoride) homopolymer or copolymer, where the matrix copolymer is poly(vinylidene fluoride-co-hexafluoropropylene). The average domain size of the polymer within the matrix polymer is 1-500 nm. EXAMPLE - 1,1-Difluoro-2-oxo-2-(4-vinylphenyl)ethanesulfonic acid (1 g) was dissolved in deionized water (3 g) in a 10 l polymerization tube and then Vazo 56 (RTM: 2,2'-Azobis(2-amidinopropane)dihydrochloride) (6 mg) was added. The resultant reaction solution was gently sparged with dry nitrogen for 10 minutes, and then heated to 65 degrees C for 1 hour. The reaction solution was cooled to room temperature and acetone was added, to obtain the homopolymer poly(1,1-difluoro-2-oxo-2-(4-vinylphenyl)ethanesulfonic acid).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation given. Preferred Compound: The pigment (I) is of formula (III) or (IV). The carboxylic acid group is of formula: =C(-CN)(-COOH).R19-R58=H or substituent, 6 or more of R19-R34, and 6 or more of R35,R40,R41,R46,R47,R52,R53 and R58, or 6 or more of R36,R39,R42,R45,R48,R51,R54 and R57, are substituted with structure (a), and one or two of R19-R58 are substituted with COOH.Preferred Layer: The photoreceptor layer has the pigment (I), a pigment of formula (II) having one or more carboxylic acid groups in a molecule and structure of formula: -(X)n-R201, and semiconductor fine particles.R101-R116=H or substituent;adjacent R101-R116=ring;n=0 or 1;X=NR211, oxygen atom or sulfur atom;R211=H or substituent;andR201=aliphatic group, aromatic group or heterocyclyl. Preferred Definitions:    A=heterocyclic ring.    EXAMPLE - 3,6-Bis((4-methylphenyl)thio)phthalonitrile (in g) (3.7) and 4-((4-((4-carboxyphenyl)sulfanyl)-2,3-dicyanophenyl)sulfanyl)benzoic acid (1.5) were dissolved in quinoline, tin chloride (3.6) was added and stirred at 150 degrees C for 10 hours. The reaction solution was cooled, filtered and purified to obtain tin phthalocyanine pigment.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The manufacture of titanium oxide sol further includes dechlorination process to separate hydrochloric acid using ultrafiltration membrane, reverse osmosis membrane, ion exchange resin and/or electrodialysis membrane. Preferred Composition: The titanium oxide sol contains anatase (70% or more), chlorine (0.1 %mass or less) and carbon, sulfur, aluminum, silicon and iron (less than 0.01 %mass). Preferred Condition: The aqueous titanium tetrachloride is mixed in water of 80 degrees C or more for 60 seconds.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): Metallic compound is reacted with ( beta )-diketone in a solvent, to obtain metal complex (I) or (II). Preferred Process: The metal-containing thin film is formed using metal complex solution, reducing gas, oxygen source and solvent. Preferred Composition: The reducing gas is hydrogen gas or ammonia gas. The oxygen source is oxygen gas. The solvent is chosen from aliphatic hydrocarbon, aromatic hydrocarbon, and ether. Preferred Definitions:    L=1,5-hexadiene, 2,4-hexadiene, 1,5-cyclooctadiene, 2,3-dimethyl-1,3-butadiene or 1,3-pentadiene;and    M=zinc, copper, ruthenium, cobalt, strontium, nickel, indium, magnesium, aluminum, gallium, or yttrium.    SPECIFIC COMPOUNDS - 138 metal complex having dialkylalkoxy methyl group-containing (beta)-diketonato ligand are disclosed e.g. bis(2-ethoxy-2,6,6-trimethyl-3,5-heptanedionato)zinc (II) of formula (Ia), bis(2-n-propoxy-2,6,6-trimethyl-3,5-heptanedionato)zinc (II), bis(2-n-butoxy-2,6,6-trimethyl-3,5-heptanedionato)zinc (II), bis(2-ethoxy-2,6,6-trimethyl-3,5-heptanedionato)copper (II) and bis(2-ethoxy-2,6,6-trimethyl-3,5-heptanedionato)(2,4-hexadiene)ruthenium (II).    EXAMPLE - 2-Ethoxy-2,6,6-trimethyl-3,5-heptanedione (4.85 g), ether (40 ml), water (1 ml), and sodium hydroxide (0.94 g) were mixed and stirred at room temperature for 10 minutes, methanol solution of zinc chloride (1.53 g) was added to the reaction mixture at room temperature, reacted for 10 minutes, filtered, concentrated and vacuum-distillated, to obtain bis(2-ethoxy-2,6,6-trimethyl-3,5-heptanedionato)zinc (II) (3.94 g) in an yield of 71%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic dispersant is alcohol. The organic adhesive is polyvinyl alcohol or water-soluble resin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The molar ratio of ethanolamine, polyphosphate, sodium dodecyl benzene sulfonate, sodium hydroxide, and water is 12-25:5-15:1-10:1-5:20-100, preferably 15-20:8-12:3-8:1-3:80-100. Water is deionized water. The polyphosphate is sodium polyphosphate, potassium polyphosphate, or ammonium polyphosphate.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The ion conductor is carbonate ion (CO32-) conductor or oxygen ion (O2-) conductor. The carbonate ion conductor is lithium carbonate, sodium carbonate or potassium carbonate. The oxygen ion conductor is yttria-stabilized zirconia or gadolinium oxide-doped ceria. The electron conductor is nickel, iron, silver, tungsten, nickel(II) oxide and/or silver oxide. The carbon gasification catalyst is carbonate, bicarbonate, sulfate or nitrate of lithium, sodium, potassium, beryllium, magnesium, calcium, strontium, scandium, titanium, vanadium, manganese, iron, nickel, molybdenum and/or silver. The addition amount of conductor catalyst is 1-50 %mass of solid carbon. The solid carbon is carbon black, graphite, coke, biomass, coal, petroleum coke and/or organic waste material. The anode carrier gas is nitrogen gas, argon gas, helium gas, carbon dioxide gas or water.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The light absorbing layer is made of at least one compound comprising cadmium telluride, copper indium gallium diselenide, copper indium gallium diselenides (Cu(In,Ga)Se2 and Cu(In,Ga)(Se,S)2), silver indium gallium diselenide, copper indium aluminum diselenide or copper aluminum diselenide. The first electrode is made of a conductive metal. The first electrode is made of one of molybdenum, copper, and aluminum. The second electrode is made of a transparent conductive oxide. The second electrode is made of indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, zinc magnesium oxide, or tin oxide. The solar cell further comprises an anti-reflective layer disposed on the second electrode. The buffer layer contains indium oxide (In2O3) doped with at least one of silicon and tin.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Sol: The sol comprises a mixture of a first sol comprising a hydrolyzed alkoxysilane and a second sol comprising a mixture of a hydrolyzed organosilane and a hydrolyzed organofluorosilane. The sol comprises tetraalkoxysilane and total of the organosilane and the organofluorosilane in a relative weight percent ratio of 0.2-2. The relative weight percent ratio of the organosilane to the organofluorosilane in the sol is 0.5-1.5. The sol further comprises (wt.%): an acid catalyst (0.001-2) where the sol has a pH of 1-4; a base catalyst (0.001-2), where the sol has a pH of 7-10; a low molecular weight polymer (0.1-10); a particle size tuning additive (0.1-2) that provides a transmission increase of 0.5-2% compared to a same coating without the particle size tuning additive; a cross-linking additive; and an alkoxysilane precursor with functional groups that can react with a hydrophobic reactive agent. Preferred Components: The alkoxysilane comprises tetramethoxysilane or tetraethoxysilane. The organosilane comprises methyltrimethoxysilane. The organofluorosilane comprises trifluoropropyltrimethoxysilane, or (tridecafluoro-1,1,2,2-tetrahydrooctyl)trimethoxysilane.    TECHNOLOGY FOCUS - POLYMERS - Preferred Coating: The coating further comprises: a substrate having a surface on which the dried gel is attached, where the dried gel has a thickness of 80 nm to 1 micron; and a solar panel having a surface on which the dried gel is attached. Preferred Components: The dried gel is formed from a mixture comprising the sol; an organic solvent selected from alcohols, esters, ethers, aldehydes or ketones; and water, where an amount of the solvent and the water in the mixture is 50-99.5 wt.%. The ratio of the solvent to the water is 5-20 wt.%. The dried gel comprises an abrasion resistance sufficient to pass standard EN 1096.2 abrasion testing when cured at less than 150 degrees C. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The acidic group is carboxyl. The photoreceptor layer further contains another pigment which does not contain metal atom. The pigment is of formula: Mz(LL11)m11(LL12)m12(X)m13.DI.Mz=metal atom;LL1=bidentate or tridentate ligand of formula (vi);LL12=bidentate ligand of formula (vii);m11,m12=0-3;m13=0-2;DI=counter ion;R101,R102=carboxy, sulfonic acid, hydroxy, hydroxamic acid, phosphoryl or phosphonyl;R103,R104=substituent;R105,R106=aryl or heterocyclyl;d1-d3=0 or more;L1,L2=optionally substituted ethenylene and/or ethynylene which is conjugated with pyridine ring;L1+L2=ring;a1,a2,b1,b2=0-3;or adjacent R103=ring;or adjacent R104=ring (when b2 is 2 or more);or R103+R104=ring (when both b1 and b2 is 1 or more);andc=0 or 1. Preferred Definitions:    RA=-(Y1)n1-B;    Y1=-COO-, -N(-Z)CO-, -COON(-Z) or groups chosen from group of formulae (ii)-(v);    n1=1 or more;    B'=5-30C alkyl;    Y2-Y4=C, O, S, or N;    Z=H or 1-30C alkyl;    ring Za-ring Zd=pyridine ring, pyrimidine ring, pyrazine ring, pyridazine ring, pyrazole ring, imidazole ring, triazole ring, thiazole ring, oxazole ring, benzimidazole ring, benzotriazole ring, benzoxazole ring or benzothiazole ring;and    M=ruthenium, iron, osmium, copper, tungsten, chromium, molybdenum, nickel, palladium, platinum, cobalt, iridium, phenyl, rhenium, manganese or zinc.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): The organosilicon compound (1) is manufactured by reacting organosilicon compound (2) or organosilicon compound (5) and organosilicon compound (3), and reacting organosilicon compound (4). Preferred Definitions:    R1-R8=phenyl;    R9-R11=Me;    R12=H or Me;    R13=H, vinyl or methacryl; and    n=2.    SPECIFIC COMPOUNDS - 4 Compounds (1) are specifically disclosed, e.g. group of formulae (1-3), (2-3), (3-3) or (4-3).    EXAMPLE - The organosilicon compound was manufactured by attaching cooling pipe, thermometer, sampling device and dropping funnel to 500 mL four-neck flask, dissolving in toluene (44.6 g) in nitrogen atmosphere, preparing hexamethyl cyclotrisiloxanes (22.3 g), feeding dimethyl chlorosilane (7.1 g) and dimethylformamides (6.7 g) on water bath, stirring by magnetic stirrer and reacting, confirming disappearance of dimethyl chlorosilane production of chloro-((dimethyl(trimethylsilyloxy)silyl)oxy-dimethylsilyl)oxy-dimethylsilane with gas chromatography, suspending tetrahydroxy containing compound (36.1 g) with toluene (180 g) and feeding into flask, feeding dimethyl chlorosilane (7.1 g) after dripping triethylamines (15.2 g) and stirring for 1 hour and carrying out stirring reaction all night, washing obtained slurry 3 times with pure water, distilling off low boiling component in evaporator, and obtaining 43.2 g of liquid products.
TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The polyether polymer is polyoxypropylene-type polymer or linear polymer which does not have a branched chain, and has number average molecular weight of 22000 or more. The main chain structure of a polyether polymer (B) is a polyoxypropylene type polymer. The reactive silicon group (II) is dimethoxy methylsilyl. The (meth)acrylic-type polymer (C) is reactive silicon group-containing (meth)acrylic-acid alkylester type polymer and/or copolymer. The weight ratio of polyether polymer (A) to polyether polymer (B) is 50:50-5:95. The curable composition further contains amine compound and/or organic dialkyl tin compound as condensation catalyst. The contact adhesive contains polyether polymer (A) and a polyether polymer (B). Preferred Definitions:    R1=chloromethyl, methoxymethyl, alkoxy, methoxy, ethoxy or phenoxy;and    W'=-O-R8.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The curable composition further contains refractive index regulator. The refractive index regulator is chosen from (meth)acrylate compound having dicyclopentanyl structure, (meth)acrylate compound having fluorene structure, (meth)acrylate compound having dioxane structure, or bismaleimide compound, preferably (meth)acrylate compound having dicyclopentanyl structure, (meth)acrylate compound having fluorene structure and (meth)acrylate compound having dioxane structure. The (meth)acrylate compound having dicyclopentanyl structure is of formula (III). The (meth)acrylate compound having fluorene structure is of formula (IV), (V), or (VI). The (meth)acrylate compound having dioxane structure is of formula (VII). The bismaleimide compound is of formula (VIII).R11-R14,R21-R24=R1;d,e=1 or 2;andR25,R26=H, methyl or ethyl.Preferred Properties: The transparent composite sheet has light transmittance at wavelength of 550 nm, of 85% or more, mean coefficient of linear expansion at 50-200 degrees C of 20 ppm/ degrees C or less and thickness of 25-200 mu m.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Component: The glass substrate is glass base comprising semi-toughened glass base and toughened glass base.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The coated microparticles are semiconductor particles e.g. titania particles, silica particles and zinc oxide particles, and has particle size of 500-900 nm and particle spacing is 0-10 mu m. The TCO transparent conductive thin film is zinc oxide thin film, boron-doped zinc oxide thin film, aluminum-doped zinc oxide thin film, gallium-doped zinc oxide thin film, other metal element doped and co-doped zinc oxide thin film, or metal element-doped tin oxide thin film.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent is toluene, xylene, tetralin, decalin, chlorobenzene, dichlorobenzene, trichlorobenzene, chloroform, tetrahydrofuran (THF), or cyclohexanes. The organic semiconductor is aromatic compound of pi-electron conjugated system, chain compound, organic pigment, or organosilicon compound. The organic semiconductor is dioctylbenzothienobenzothiophene (C8-BTBT), didocylbenzothienobenzothiophene (C10-BTBT), didodecylbenzothienobenzothiophene (C12-BTBT), or 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene).    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer is polymethylmethacrylate (PMMA), polyvinyl pyrolidone (PVP), alpha -methyl polystyrene, polystyrene, polyvinyl alcohol, or polyethyleneglycol.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The polyfunctional acrylic monomer is 1,4-butanediol diacrylate, trimethylol-propane triacrylate, acrylic acid addition product of bisphenol A diglycidyl ether, ethylene oxide-modified bisphenol A diacrylate and/or isocyanuric-acid ethylene oxide modified diacrylate, preferably isocyanuric-acid ethylene oxide modified diacrylate.    TECHNOLOGY FOCUS - POLYMERS - Preferred Property: The gel fraction of acrylic resin composition is less than 3%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The average size of oxidated graphene is 100 nm to 200 mu m.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The cation material comprises compound having an amino group. The solvent comprises liquid mixture comprising water, ethanol, methanol, acetone, N-methylformamide and/or N-methylpyrrolidone. Preferred Property: The cation material has film thickness of 1 nm or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The metal oxide conductive layer is made of antimony doped zinc oxide, gallium doped zinc oxide, zinc oxide, tin oxide or indium tin oxide.    TECHNOLOGY FOCUS - METALLURGY - The metal layer is formed of silver, aluminum or platinum.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The length, diameter, number per unit area, crystallinity, amount of defects, functional group species, functional group amount, density, weight and distribution of carbon nanotube formed in carbon nanotube-formation surface (S1) and carbon nanotube-formation surface (S2) differs.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The hydrothermal reaction is performed at 200 degrees C for 16 hours. The method involves repeating the centrifuging process for 5 times. The method involves drying the product at 70 degrees C for 36 hours.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Condition: Liquefied zinc and liquefied zinc chloride are separated by specific-gravity difference. Preferred Arrangement: A circulation mechanism for liquid zinc is provided in the cavity. The circulation mechanism is a plate material having a surface which divides the cavity into two in an upper limit and contains the center axis line of the main component. A blocker (15) for preventing penetration of liquefied zinc and liquefied zinc chloride through the gas outlet is provided in the inner upper face of main component in the downward direction of gas outlet. The upper end vicinity of main component is provided with a liquid outlet (21) for extracting liquefied zinc and liquefied zinc chloride. A gravity-separation apparatus is arranged at the exterior of liquid outlet for separating liquefied zinc and liquefied zinc chloride. A collection apparatus for liquefied zinc chloride is arranged at the liquid outlet. The inclination angle is preferably 10-30 degrees . A temperature-control mechanism is provided for controlling the temperature of liquid zinc in the main component to 450-550 degrees C.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The material of main component is silicon carbide or fused silica. Silicon chloride is chlorosilane.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Layer: The organic layer comprising the derivative (I) is electron carrying layer (3) and/or electron injection layer.
TECHNOLOGY FOCUS - METALLURGY - Preferred Components: The copper paste further contains sintering auxiliary agent, which is a carboxylic acid metallic salt or metal carboxylic acid complex, where the metal cation species are other than copper, and are cationic species of a first metal group containing bismuth and/or tin, and a second metal group containing zinc, aluminum, indium, silver, cobalt, titanium, nickel and/or manganese.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The first organic solvent is chosen from 9-14C alkanol, 4-9C alkanediol, polyalkylene glycol, polyvalent alcohol monoalkylether, glycerol, 1,2,3-butane triol, 1,2,4-butane triol, 1,2,5-pentane triol or 1,2,6-hexane triol. The method further utilizes a second organic solvent chosen from 4-9C alkanediol, polyalkylene glycol, glycerol, 1,2,3- butane triol, 1,2,4-butane triol, 1,2,5- pentane triol or 1,2,6- hexane triol; a third organic solvent chosen from 9-14C alkanol, 4-9C alkanediol, polyvalent alcohol monoalkylether, glycerol, 1,2,3- butane triol, 1,2,4- butane triol, 1,2,5- pentane triol or 1,2,6- hexane triol; a fourth organic solvent chosen from 4-9C alkanediol, polyalkylene glycol, glycerol, 1,2,3- butane triol, 1,2,4-butane triol, 1,2,5- pentane triol or 1,2,6- hexane triol. The (dialkylamino)alkylamine is chosen from (dialkylamino)propylamine of formula (R2N-CH2CH2CH2-NH2), (where R2 is not defined).
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): The amine compound (I) is obtained by reacting triquinane compound (II), amine compound of formula: NH(-Ar1)(-Ar2) (IV) and NH(-Ar4)(-Ar3) (V) in presence of base and catalyst containing palladium compound and trialkylphosphine. Preferred Definitions:    ring A,ring B',ring C'=benzene ring.    SPECIFIC COMPOUNDS - 42 Amine compounds are disclosed e.g. 6-N,6-N,19-N,19-N-tetraphenylhexacyclo(14.7.0.01,9.03,8.010,15.017,22)tricosa-3(8),4,6,11,13,17(22),18,20-octaene-6,19-diamine of formula (Ia), 10-(19-(9,9-dimethyl-9,10-dihydroacridin-10-yl)hexacyclo(14.7.0.01,9.03,8.010,15.017,22)tricosa-3(8),4,6,11,13,17(22),18,20-octaen-6-yl)-9,9-dimethyl-9,10-dihydroacridine, 6-N,19-N-bis(naphthalen-1-yl)-6-N,19-N-diphenylhexacyclo(14.7.0.01,9.03,8.010,15.017,22)tricosa-3(8),4,6,11,13,17(22),18,20-octaene-6,19-diamine, 6-N,6-N,19-N,19-N-tetrakis(4-methylphenyl)hexacyclo(14.7.0.01,9.03,8.010,15.017,22)tricosa-3(8),4,6,11,13,17(22),18,20-octaene-6,19-diamine and 6-N,19-N-diphenyl-6-N,19-N-bis(4-phenylphenyl)hexacyclo(14.7.0.01,9.03,8.010,15.017,22)tricosa-3(8),4,6,11,13,17(22),18,20-octaene-6,19-diamine.    EXAMPLE - 6,19-Dibromohexacyclo(14.7.0.01,9.03,8.010,15.017,22)tricosa-3(8),4,6,11,13,17(22),18,20-octaene (in g) (0.7), diphenylamine (0.58), cesium carbonate (1.51), palladium acetate (7 mg), tri-tert-butylphosphine (20 mg), and ortho xylene (10 mL) were stirred at 120 degrees C for 15 hours under nitrogen atmosphere. Pure water and toluene were to obtained reaction product. The obtained organic layer was concentrated under reduced pressure and solvent was distilled off. The obtained product was purified, to obtain 6-N,6-N,19-N,19-N-tetraphenylhexacyclo(14.7.0.01,9.03,8.010,15.017,22)tricosa-3(8),4,6,11,13,17(22),18,20-octaene-6,19-diamine having purity of 99.6% and glass transition temperature of 120 degrees C, in yield of 74%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The inert gas is high-purity argon (99.9 volume% or more). The distance between the target material and substrate is 7-8 cm. The sputtering power is 70-80 W. The prepared n-type zinc oxide thin film has resistivity of 104-108 Ohmx cm, thickness of 60-80 nm, average transmittance of 90% or more from visible light area to near infrared area, and crystal orientation along (002) plane.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The zinc oxide target material has density of more than 95% and resistance rate of 10-1 to 103 Omega .cm. The grain size of zinc oxide precursor is 20-200 nm.
TECHNOLOGY FOCUS - POLYMERS - Preparation (claimed): The porphyrin copolymer-containing pyrrolepyrroledione unit is prepared by carrying out polycondensation and oxidizing reaction to compounds (II), (III) and (IV) in organic solvent system with catalyst and oxidant to generate 5,15-di(9,9-dialkyl fluorine) porphyrin; carrying out bromination substitution in organic solvent system with catalyst to generate 5,15-dibromo-10,20-di(9, 9-dialkyl fluorine)porphyrin; carrying out Suzuki coupling reaction with compound (V) in organic solvent system with catalyst under inert gas environment to obtain copolymer (I). Preferred Components: Each unit of porphyrin copolymer-containing pyrrolepyrroledione unit has fluorine with alkyl group. The catalyst used in Suzuki coupling reaction is organic palladium catalyst or mixture of organic palladium and organic phosphine ligand at molar ratio of 1:2-20; and the molar amount of catalyst used in Suzuki coupling reaction is 0.05-20% of compound (V); and organic solvent is weakly polar and/or polar nonproton organic solvent. Preferred Processes: The polycondensation and oxidizing reaction comprises dissolving compounds (II), (III) and (IV) in organic solvent, adding organic acid as catalyst at molar amount of 0.1-20 times of compound (III), stirring for 12-14 hours, adding oxidant at 1-10 times of compound (III), continuously stirring, adding triethylamine to carry out quenching reaction, and purifying to obtain condensation polymer. The Suzuki coupling reaction comprises adding compound 5,15-dibromo-10,20-di(9,9-dialkyl fluorine) porphyrin and organic solvent under protection of inert gas, vacuumizing to remove inert gas, adding catalyst, heating at 50-120 degrees C and reacting for 24-72 hours.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (claimed): The preparation of (I) comprises using 2,7-bi(4,4,5,5-tetramethyl-1,3,2-dioxane pentaborane)-9,9-dialkyl fluorine, 9,10-dibromoanthracene and its derivative, pyrrole-pyrrole-dione and its derivative as monomer raw material, adding with catalyst and aqueous alkali in organic solvent, performing Suzuki reaction at 60-100 degrees C for 12-72 hours under anaerobic condition to obtain fluorene polymer containing anthracene and pyrrolepyrrole-dione unit. The pyrrole-pyrrole-dione and its derivative are of formula (II). Preferred Components: The mol ratio of 2,7-bi(4,4,5,5-tetramethyl-1,3,2-dioxanepentaborane)-9,9-dialkyl fluorine, 9,10-dibromoanthracene and its derivative, pyrrole-pyrrole-dione and its derivative is 1:a:b. The catalyst is organic palladium catalyst, at 0.5-10%. The organic palladium catalyst is tris(dibenzylideneacetone)dipalladium(0)/tri(o-tolyl)phosphine, tetrakis(triphenylphosphine)palladium(0) or bis(triphenylphosphine)palladiumchloride. The aqueous alkali is sodium hydroxide aqueous solution, sodium carbonate aqueous solution, sodium bicarbonate aqueous solution or tetraethyl ammonium hydroxide aqueous solution; and the aqueous alkali maintains reaction system in alkaline environment with pH not greater than 10. The organic solvent is toluene, glycol dimethyl ether, tetrahydrofuran, ether, methylene chloride, chloroform or ethyl acetate.a=greater than 0;b=greater than 0;ora+b=0.9-1.1.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The P-type oxidation additionally comprises alkaline earth metals, transition elements, group III elements, or group V elements. The P-type oxidation is expressed as of formula (AxB1yOz) or (Sr1-aMaCubOc). The content of the P-type oxidation is 0.1-5 parts by weight, based on the total amount of the paste.A = Cu or Ag;B1 = B, Al, Ga, In, Ti, Mn, Y, La, Fe, Cr, Sb, Sc, Nd or Bi;M = K, Na or Ca;x = 0.5-1.5;y = 0.5-2.5;z = 1.5-4.5;a = 0.03-0.2; andb, c = 1.5-2.5.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: In the solar cell, each of the BSF layer and the rear contact comprises the P-type oxidation. The BSF layer has a thickness of 4-10 mu m. The solar cell further comprises an antireflective layer on the semiconductor substrate. Preferred Method: The step of forming the paste comprises synthesizing the P-type oxidation, adding the P-type oxidation into with an aluminum paste, mixing the P-type oxidation with the aluminum paste to form a mixture, and milling the mixture of the P-type oxidation and the aluminum paste. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The aromatic compound consists of benzenes, alkylated benzenes, toluenes and/or xylenes. The carbon nanoparticles are soluble in ethanol, xylenes, hexane, and chloroform.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The insulating layer is made of magnesium oxide or silicon oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The second cleaning solution contains compounds consisting of potassium hydroxide, ammonium hydroxide, hydrochloric acid, ammonium citrate or ammonium acetate (0.1-10 vol.%), and hydrogen peroxide (0.1-5 vol.%).
TECHNOLOGY FOCUS - METALLURGY - The electrode layer and current collector are made of silver. Another electrode layer contains material selected from the group consisting of nickel, copper, aluminum, tin, zinc, indium, titanium, gold and combination.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: Compound (A) and/or compound (B) have cyclic skeleton(s) chosen from benzene ring and cyclohexane ring. The content of compound (B) is 1-1000 parts weight, preferably 10-250 parts weight, with respect to 100 parts weight of compound (A). The resin composition further contains an inorganic filler and a silane coupling agent. The polymerization initiator is photo or thermal cationic polymerization initiator, or photo or thermal radical polymerization initiator.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The adhesive mass of the sheet material comprises iron oxide particles coated on silicon dioxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The barrier layer is made of dielectric material e.g. silicon nitride, silicon oxide, silicon oxynitride, aluminum nitride, aluminum oxide and aluminum oxynitride. The barrier layer is made of silicon nitride.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The average value of oxygen contained in target material is 200 mass ppm or less. Preferred Property: The copper-gallium alloy phase has average particle diameter of 40 mu m or more.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Property: The porous silica film has surface roughness of 8 nm or less.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The translucent base material is polyethylene terephthalate, polymethyl methacrylate, polycarbonate and/or tetrafluoroethylene-ethylenic copolymer. Preferred Properties: The thickness of translucent base material is 0.1-80 mm.
TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Composition: The ceramic porous component comprises a positive element containing silicon (50 mol% or more). The base material has a glass transition temperature of 200 degrees C or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The atomic ratio of gadolinium and indium is 0.03-0.05. The conductive film has carrier concentration of less than 3.5x 1020 cm -3 and Hall mobility of more than 65 cm2/V.second. The average transmittance of membrane component in the film at wavelength of 400-1200 nm is 85% or more. The solar cell has silicon group semiconductor or compound semiconductor as a photoelectric conversion element, a light absorption layer comprising copper indium selenide, copper indium sulfide, cooer gallium selenide, copper gallium sulfide, their solid solution or cadmium telluride, an intermediate layer comprising cadmium sulfide layer or cadmium/zinc sulfide, a window layer comprising zinc oxide or zinc/magnesium oxide.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The nanoparticles comprises nanoparticles of silicon, germanium, aluminum, gallium, indium, copper, silver, gold, titanium, zinc, iron, cobalt, nickel, palladium, platinum or nanoparticles of compounds or alloys comprising at least one of these elements. The nanoparticles exhibit an average diameter of 2 nm to 5 mu m. The reducing agent comprises an acid or a base, preferably hydrofluoric acid, hexafluorosilicic acid, hydrochloric acid, potassium hydroxide solution or sodium hydroxide solution, depending on the selection of the nanoparticles.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The reducing agent is at least partially included in the starting phase in the step (a). The starting phase is separated from the target phase comprising the nanoparticles with oxide-free surface, and the target phase is supplied for further use. At least partially oxidic surface of the nanoparticles is obtained intrinsically and/or artificially. The two phase system is thoroughly mixed. The mixing is carried out by shaking, ultrasonic, flowing, stirring, heating and/or passing through liquids or gases. The two phase system is additionally heated or subjected to radiation or electrical fields. Preferred Components: The starting phase comprises water, an aqueous phase or an organic solvent. The target phase comprises organic solvents, water or aqueous solvents, which are immiscible with the starting phase. The organic solvent comprises haloalkanes, e.g. chloroform, tetrachloromethane, long-chain linear or branched alcohol or other solvents, which are not immiscible with the aqueous phases. EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The intermediate electrode layer has material selected from group consisting of indium tin oxide, fluorine-doped tin oxide, zinc oxide, tin oxide, and the combinations.    TECHNOLOGY FOCUS - METALLURGY - The intermediate electrode layer has material selected from group consisting of titanium, chromium, nickel, niobium, molybdenum, tin, tantalum, tungsten, platinum, and gold. The metal electrode layer has material selected from group consisting of aluminum, nickel, copper, zinc, molybdenum, silver, platinum, and gold.
TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Arrangement: The ring-shaped heat-retention lid covers the peripheral portion of the opening of the crucible, the opening is covered through the ring-shaped periphery heat-retention component (6) having a central opening of an area smaller than the molten-metal surface in the crucible. The decompression chamber has a chamber in which an exchangeable heat-retention lid is accommodated through a gate valve. Preferred Conditions: The pressure in the decompression chamber during silicon purification is 500 Pa or less. The pressure during exchange of heat-retention lid is higher than 500 Pa.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): An ester of formula (VII) is converted into a carboxylic acid compound of formula (VIII) by heating and refluxing a solution obtained by dissolving compound (VII) and lithium iodide in pyridine, distilling the solvent, filtering, and washing the precipitate with water, to obtain compound (IX) as compound (I).M=alkali metal or alkaline earth metal.Preferred Compounds: Compound (I) is chosen from 10 compounds e.g. compounds of formulae (II)-(VI).p=2-20;R=H or 1-20C hydrocarbyl;andR'3,R'6,R"3,R"6=H, or 1-20C hydrocarbyl, 1-20C alkoxy, 6-20C aryloxy, amino, or silyl (all optionally substituted by 1-10C hydrocarbyl, 1-10C alkoxy, 6-12C aryloxy, amino, hydroxy, halo, or silyl). SPECIFIC COMPOUNDS - 10 Compounds (I) are disclosed e.g. 1,4-dibutyl-anthracene-2,3-dicarboxylic acid bis-(2-(2-(2-methoxy-ethoxy)-ethoxy)-ethyl) ester of formula (IA), pentacene-2,3-dicarboxylic acid bis-(2-(2-(2-methoxy-ethoxy)-ethoxy)-ethyl) ester, naphthacene-2,3-dicarboxylic acid bis-(2-(2-(2-methoxy-ethoxy)-ethoxy)-ethyl) ester, 1,4-diphenyl-anthracene-2,3-dicarboxylic acid bis-(2-(2-(2-methoxy-ethoxy)-ethoxy)-ethyl) ester, and anthracene-2,3-dicarboxylic acid bis-(2-(2-(2-methoxy-ethoxy)-ethoxy)-ethyl) ester.    EXAMPLE - 1,4-Dibutyl-anthracene-2,3-dicarboxylic acid bis-(2-(2-(2-methoxy-ethoxy)-ethoxy)-ethyl) ester was obtained by heating and refluxing 1,4-dibutyl-anthracene-2,3-dicarboxylic acid dimethyl ester with triethylene glycol monomethyl ether in toluene in the presence of sulfuric acid catalyst (0.5 eq) for 24 hours, with a yield of 60%.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The graphene contains oxide and/or nitride, preferably alumina, silica, zirconium dioxide, yttrium(III) oxide, chromium(III) oxide, beryllium oxide, tin dioxide, europium(III) oxide, titanium dioxide, titanium dioxide-alumina, gadolinium oxide, uranium dioxide, uranium and plutonium mixed oxide ((U-Pu)O2), thorium oxide (ThO), silicon nitride, aluminum nitride, titanium nitride, boron nitride, chromium nitride, tantalum nitride, beryllium-silicon nitride and/or titanium-aluminum nitride. Preferred Process: Graphene is formed by induced coupled plasma-chemical vapor deposition and low-pressure chemical vapor deposition or atmospheric pressure chemical vapor deposition, at 1000 degrees C or less. Then, formed graphene is cooled, and patterned. The substrate is locked in load-locked chamber (13) within induced coupled plasma chemical vapor deposition chamber (15), carbon source is supplied to induced coupled plasma chemical vapor deposition chamber and graphene is formed at 1000 degrees C or less. Plasma power, reaction time or cooling speed is controlled during induced coupled plasma chemical vapor deposition to control property of graphene. The graphene is further doped using (in)organic dopant. Preferred Properties: The longitudinal and transverse length of the graphene sheet is 1 mm-5 m. The graphene has transparency.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (Claimed): The aromatic compound having nitrogen-containing structural unit (I) is manufactured by reacting nitrogen compound of formula: NR1R2R3, phosphorus compound of formula: PR1R2R3 and/or sulfur compound of formula: SR1R2R and aromatic compound, and converting aromatic compound to onium salt. Preferred Composition: The aromatic compound is of formula (II) or (V), or of formula: X1-(Ar1-N(-Ar3-Z-N+R1R2R3A)-Ar2)n-X2 (III), or X1-(Ar1-N(-Ar3-Z-X3)-Ar2)-X2. The aromatic compound has nitrogen-containing structural unit of formula: -(Ar1-N(-Ar3-Z-N+R1R2R3A)-Ar2)- or -(Ar1-N(-Ar3-Z-X3)-Ar2)-, or nitrogen-containing structural unit of formula (IV). The hole injection layer and/or positive hole transport layer have crosslinked structure.n=1 or more;X1,X2=H or monovalent group;andX3=leaving group. EXAMPLE - Tetrahydrofuran solution (0.2 mol/L) of tri(4-bromophenyl)amine (in g) (100) and pentane solution (1.6 mol/L) of tertiary-butyl lithium were mixed. 1,6-Dibromohexane was added to reaction mixture and reacted. The reaction mixture was cooled to room temperature for 30 minutes, distilled, washed and dried to obtain (4-(6-bromohexyl)-phenyl)-bis-(4-bromophenyl)amine (24.1), with yield of 21%.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation (disclosed): Aromatic heterocyclic compound of formula (A) or (B) and phenanthroline compound of formula (C) are subjected to cross-coupling reaction in presence of metal catalyst, to obtain phenanthroline compound (I). Preferred Compound: The phenanthroline compound (I) is preferably of formula (II) or (III). Preferred Definitions:    L=single bond, or group chosen from 12 groups e.g. groups of formulae (a)-(e);    R11-R13=1-40C alkyl, 2-40C alkenyl, 2-40C alkynyl, 6-40C aryl, 5-40C heteroaryl, 1-40C alkoxy, 6-40C aryloxy, 6-40C arylamino or 1-40C alkylamino (all optionally substituted), halo or cyano;    a=0-4;    b=0-3;and    c=0-2.    SPECIFIC COMPOUNDS - 12 Phenanthroline compounds are disclosed e.g. 2-methyl-5-(1,10-phenanthrolin-2-yl)-1H-isoindol-1,3(2H)-dione of formula (Ia), 2-methyl-5-(1,10-phenanthrolin-3-yl)-1H-isoindol-1,3(2H)-dione, 2-methyl-5-(1,10-phenanthrolin-5-yl)-1H-isoindol-1,3(2H)-dione, 2-methyl-5-(4-(1,10-phenanthrolin-2-yl)phenyl)-1H-isoindol-1,3(2H)-dione and 2-methyl-5-(4-(1,10-phenanthrolin-3-yl)phenyl)-1H-isoindol-1,3(2H)-dione.    EXAMPLE - Tetrakis(triphenylphosphine) palladium(0) (in g) (0.1), 2-chloro-phenanthroline (0.8), 5-bromo-2-methyl-1H-isoindol-1,3(2H)-dione (1.6), and cesium carbonate (3), 1,2-dimethoxyethane (37 mL) were mixed, stirred at 80 degrees C for 6 hours, water (50 mL) was added to the reaction mixture and filtered, to obtain 2-methyl-5-(1,10-phenanthrolin-2-yl)-1H-isoindol-1,3(2H)-dione.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general preparation is given in the specification. Preferred Compound: The compound (I) is selected from 2 compounds as given in the specification, e.g. compound of formula (II). Preferred Definitions:    n and a=2.    SPECIFIC COMPOUNDS - 7 Compounds are specifically claimed as the compound (I), e.g. Ir((2-(pyrazol-1-yl)phenylato)2)(CNtBu)OTf (Ia); Ir((2-(pyridin-2-yl)phenylato)2(CNtBu)OTf; Ir((2-(pyrazol-1-yl)phenylato)2)(CNtBu)(CCPh); Ir((2-(pyridin-2-yl)phenylato)2(CNtBu)(CCPh); and Ir((2-(pyridin-2-yl)phenylato)2 (CCPh)2Li.    EXAMPLE - (Ir((2-(pyrazol-1-yl)phenylato)2muCl)2 (1.073 g) dissolved in dichloromethane (CH2Cl2) (20 ml) at room temperature was reacted with tert-butylisocyanide (0.25 ml) for 1 hour. The mixture was flash chromatographed through silica with CH2Cl2 to remove the less polar impurities and the product was eluted using CH2Cl2/MeOH 95/5. Removing the solvent and washing the residue with methanol (MeOH) gave clean Ir((2-(pyrazol-1-yl)phenylato)2(CNtBu)Cl (830 mg, 71% yield). Ir((2-(pyrazol-1-yl)phenylato)2(CNtBu)Cl (500 mg), dissolved in CH2Cl2 (50 ml), and silver triflate (AgOTf) (236 mg) dissolved in MeOH (25 ml) were added at room temperature. The mixture was reacted for 2 hours. After work up, Ir((2-(pyrazol-1-yl)phenylato)2(CNtBu)OTf (626 mg, greater than 99% yield) was obtained.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The alkali element or alkali compound is chosen from lithium, sodium, potassium and their compounds. The solar cell further has alkali diffusion barrier layer (201) containing molybdenum, tungsten, tantalum, vanadium, titanium, niobium, zirconium, chromium, titanium nitride, zirconium nitride, tantalum nitride, and/or vanadium nitride, molybdenum layers (A1 and B1) and adhesion layer. The transition metal layer (203) further comprises copper, indium, and/or aluminum, and molybdenum, tungsten, tantalum, vanadium, titanium, niobium, and/or zirconium. The transition metal layer (203) comprises molybdenum, tungsten, tantalum, vanadium, titanium, niobium, and/or zirconium, lattice distortion element or lattice distortion compound chosen from oxygen, molybdenum dioxide and molybdenum trioxide, molybdenum containing oxygen and sodium, 59 atomic% or more of molybdenum, 5-40 atomic% of oxygen, and 0.01-1.5 atomic% of sodium, and molybdenum containing gallium and/or copper, or 50-90 atomic% of molybdenum, 10-50 atomic% of gallium, and 0-10 atomic% of copper. The p-type semiconductor absorber layer comprises copper-indium-gallium selenide containing alkali, copper-indium-gallium diselenide containing alkali, 0.03-1.5 atomic% of sodium, and copper-deficient copper-indium selenide containing 0.03-1.5 atomic% of sodium. The molybdenum layer (B1) further comprises copper, indium, and/or aluminum. The adhesion layer comprises 90 atomic% or more of chromium. The alkali diffusion barrier layer comprises 90 atomic% or more of molybdenum. Preferred Properties: The alkali diffusion barrier layer has thickness of 100-400 nm. The transition metal layers (202 and 203) have thickness of 100-500 nm, and 20-80 nm, respectively. Preferred Process: The transition metal layer (203) is deposited using a sputtering target comprising molybdenum-copper-gallium alloy or molybdenum-gallium alloy.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The insulating layer contains silicon nitride. Preferred Properties: The primary surface layer has refractive index of 1.9-2.1. The secondary surface layer has refractive index of 2.1-2.3. The semiconductor substrate contains amorphous silicon.
TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Property: The nonwoven fabric has a thickness of 20 mu m or less. The cellulose nanofiber is plant-derived. The ratio of mean fiber length and average fiber diameter is 2000 or more. The average fiber diameter of cellulose nanofiber is 15-80 nm and the standard deviation of fiber diameter distribution is 80 nm or less. The cellulose fiber is derived from wood fibers and/or seed hair fibers, and the Kappa number is 30 or less. The ratio of average fiber diameter of cellulose fiber and average fiber diameter of cellulose nanofiber is 10/1-100/1. The ratio of cellulose nanofiber is 0.01-15 parts weight with respect to 100 parts weight of cellulose fiber. The nonwoven fabric is synthetic-resin-free, and has a tensile strength of 6 N/15 mm or more and an air permeability of 10-500 seconds/100 ml, at a basic weight of 10 g/m2.
TECHNOLOGY FOCUS - TEXTILES AND PAPER - Preferred Properties: The polyolefin fibers have an average fiber diameter of 10-1000 nm and a mean fiber length of 1-1000 mu m, and are polyethylene fibers. The cellulose fibers have an average fiber diameter of 0.2-1 mu m. The weight ratio of cellulose fibers and polyolefin fibers is 99.9/0.1-10/90, preferably 70/30-20/80. The nonwoven fabric is free of a hydrophilic binder, and synthetic resin having a melting point of 100 degrees C or less. The nonwoven fabric has a tensile strength of 12 N/15 mm or more and an air permeability of 50-100 seconds/100 ml at a basic weight of 10 g/m2, and a thickness of 10-18 mu m. The nonwoven fabric is processed at a temperature lower than the melting point or softening point of polyolefin fibers. Preferred Method: The nonwoven fabric is obtained by dispersing raw material polyolefin fibers in a solvent to obtain a dispersion liquid, and homogenizing the dispersion liquid with a homogenizer provided with a crushing type homo-valve seat (2).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Properties: The copper flat wire has area ratio of 60-90% of (100) face which is orthogonal with respect to rolling direction and Young's modulus of 90 GPa or less. The total area ratio of the (100) face and (102) face which are orthogonal with respect to rolling direction is 20-95%. The crystal grain diameter of the hot-rolled interconnector material is 100 mu m or less.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The substrate is a silicon (Si) substrate which is chemically etched while varying a mixture ratio of water, HNO3, and HF irrespective of a crystallization direction of the substrate.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The component (c) is urethane (meth)acrylate. The composition further contains functional material(s) chosen from material of white light reflector, black material, infrared ray absorbent material, ultraviolet ray absorbent material, antistatic material, and electromagnetic wave shielding material and organic solvents (400-900 with respect to total of 100 parts mass of components (a)-(c)).    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The resin has melting point of 230 degrees C or less. The copolymer (b) has ABA triblock structure containing methacrylic ester as A-block component and acrylic ester as B-block component or -(A1)-(B)-(A2)- structure in which (A1) and (A2) represent the block component which respectively consists of methacrylic acid alkylester, and (B) represents the block component which consists of acrylic acid alkylester. The block copolymer (b) is manufactured by living anion polymerization method. The polyvinyl acetal resin is polyvinyl butyral resin. The coating composition is coated on back sheet base material chosen from polyester type resin and polycarbonate. The base material is glass, polycarbonate type resin, polyester type resin, cellulose resin or liquid crystal polymer.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The inorganic oxide layer comprises aluminum oxide, zinc oxide, zirconium oxide, silicon oxide, and/or hafnium oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The hydrophilic groups are hydroxyl groups or carboxylic acid groups.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The organic layer comprises poly vinyl alcohol.
TECHNOLOGY FOCUS - POLYMERS - Preferred Film: The dimensional-change rate of gas barrier film in vertical direction and horizontal direction after 5-minute immersion in 30 degrees C water is 30 ppm or less, preferably 20 ppm or less. The gas barrier film has alternate lamination of at least 2 layers of organic layer and at least 2 layers of inorganic layer. The dimensional change rate of gas barrier film in vertical direction and horizontal direction after 5 minute immersion in N-methylpyrrolidone at 30 degrees C is 20 ppm or less. The difference of water-vapor permeation rate of gas barrier film after 5-minute immersion in N-methylpyrrolidone at 30 degrees C, and water vapor permeation rate before immersion is 0.01 g/m2/day or less. The difference of water vapor permeation rate of the gas barrier film after 5-minute immersion in 30 degrees C water, and water vapor permeation rate before immersion is 0.01 g/m2/day or less. The thickness of base film is 50-150 times of total thickness of organic layer and inorganic layer. The thickness of organic layer is 1-30 times of the thickness of the inorganic layer adjacent to the organic layer. The thickness of gas barrier film is 25-500 mu m.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The solution containing nanoparticles is prepared by dissolving or dispersing nanoparticles in water, distilled water, alcohol, propanone, nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, acetic acid, carbonic acid, boric acid, perchloric acid, sodium hydroxide, potassium hydroxide, calcium hydroxide, barium hydroxide and/or aqueous ammonia. The secondary carrier which absorbs nanoparticles from mixed solution is separated. The reaction mixture is filtered (3) using filter including paper, polymer material, metal and/or ceramic materials. Preferred Composition: The nanoparticles contain precious metal raw material including gold, silver, platinum, rhodium, palladium, ruthenium, osmium, rhenium and/or iridium, or transition metal raw material containing titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, yttrium, zirconium, niobium, molybdenum, tungsten and/or hafnium. The secondary carrier comprises activated carbon or carbon black. The content of nanoparticles in catalyst is 1 weight ppm to 80 wt.%. Preferred Properties: The secondary carrier has specific surface area of 50-5000 m2/g, and particle size of 100 nm to 50 mm.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Parameter: The concentration of zinc salt is 0.01-0.30 M. The concentration of second sulfur source is 0.01-1 M. The concentration of second sulfide synthetic adjuvant is 1-10 M. The thickness of cadmium sulfide film is 10-130 nm. The thickness of zinc (sulfide, oxide, hydroxide) film is 50-250 nm. The molar ratio of sulfur with respect to zinc is 0.3-1. The molar ratio of oxygen with respect to zinc is 0-0.7.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The sintering aids comprise 0.001-1 weight% of arsenic(III) oxide, antimony(III) oxide, bismuth(III) oxide, boric acid, tellurium(IV) oxide, indium(III) arsenide, indium(III) antimonide, indium(III) selenide, indium(III) telluride, bismuth(III) phosphate or boron(III) phosphate, with respect to dry indium-tin oxide powder. Preferred Process: The method further involves casting the slip using a porous plaster of paris or porous polymer mold to form an indium-tin oxide green component, and firing the green component.
TECHNOLOGY FOCUS - METALLURGY - Preferred Composition: The lead-free solder alloy contains zinc (0.4 %mass or more) and/or phosphorus (0.001 %mass or more).
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compositions: Precipitation rod is a silicon carbide rod consists of porous silicon carbide impregnated with silicon. Mass ratio of silicon carbide: impregnated silicon is 80:20-95:5.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The group 2 element is calcium, strontium or barium, preferably strontium. Preferred Properties: The sputtering target has bulk density of 4-4.8 g/cm3 and electrical resistance of 1 k Omega or less.
TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: In the processing apparatus, the metal layers forming many fluid channels when the metal layers are connected together. The metal layers including at least one alignment structure, the aligned structure spaced from the opening in the metal layer and not forming the fluid channel, the alignment structure positioned in the same location on each of the metal layers.
TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: No general method for the preparation of the complex (I) is given. Preferred Layer: The buffer layer is formed as thin film using a spin coating method, dip coating method, roll coating method, screen coating method, spray coating method, spin casting method, flow coating method, screen printing method, ink jet method, drop casting method, or vacuum deposition method. The thickness of the buffer layer (L1) is 0.1-100 nm. Preferred Definitions:    R1 and R2=6-30C aryl or 2-30C heteroaryl (all optionally substituted).    EXAMPLE - No suitable example given.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The crystal silicon wafer comprises mono-crystalline silicon piece and silicon chip. The alkaline solution is aqueous sodium hydroxide (NaOH) or aqueous potassium hydroxide (KOH). The mass percentage concentration of NaOH is 50%, and the mass percentage concentration of KOH is 50%. Preferred Processes: The atomization technology comprises ultrasonic atomization, pulverized nozzle with high pressure, rotating and spraying gas. The crystal silicon chip heating temperature is 70-100 degrees C.
TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The CP-4A solution comprises hydrofluoric acid solution with concentration of 40 wt.%, nitric acid, absolute ethyl alcohol and deionized water at volume ratio of 3:5:3:22. The alkaline agent is potassium hydroxide (1-2%), or mixed solution of isopropanol (5-10%) and deionized water. The silver particle size is 30-50 nm. The acidic etchant comprises 40 wt.% hydrofluoric acid, 30 wt.% hydrogen peroxide and deionized water at ratio of 1:5:8-12, and silicon chip after silver etched for 1-5 minutes in acid corrosive. The super pure water resistance rate is less than or equal to 16 cm. Preferred Processes: The temperature of the water bath is 70-90 degrees C, and etching for 30-40 minutes in alkaline corrosive. The removal of residual silver comprises removing residual silver at surface by ultrasonic cleaning method, using nitric acid solution with concentration of 20-40 wt.%, removing silver in pyramid surface, and cleaning with deionized water.