TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The organometallic compound comprises a metal alkoxide, a metal halide, a metal alkyl, a metal alkylamide, a carbonyl metal compound, a metal aryl, a metal cyclopentadienyl, and/or a metal phosphine. The surface modification agent is an organometallic compound, and the organometallic compound comprises a metal containing compound of formula (M-(R8)p) (A), and/or metal containing compound of formula (M-(O-R9)p) (B). The surface modification agent or organometallic compound is a compound comprising aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, diethylaluminum ethoxide, tris(ethylmethylamido) aluminum, triethylaluminum, triisobutylaluminum, trimethylaluminum, tris(diethylamido)aluminum, tris(ethylmethylamido) aluminum, trimethylarsine, diborane, trimethylboron, bis(N,N'-diisopropylacetaminato) cobalt(II), dicarbonyl(cyclopentadienyl) cobalt(I), (N,N'-diisopropylacetaminato) copper(II), bis(N,N'-di-tert-butylacetamidinato) iron(II), gallium tribromide, gallium trichloride, triethylgallium, triisopropylgallium, trimethylgallium, tri(dimethylamido)gallium, tri-tert-butylgallium, digermane, germane, tetramethylgermanium, hafnium(IV) chloride, hafnium(IV) tert-butoxide, tetrakis(diethylamido) hafnium(IV), tetrakis(dimethylamido)hafnium (IV), tetrakis(ethylmethylamido) hafnium(IV), indium trichloride, indium (I) iodide, indium acetylacetonate, triethylindium, tris(N,N'-Ditert-butylacetamidinato) lanthanum(III), bis(pentaethylcyclopentadienyl) magnesium, molybdenum hexacarbonyl, molybdenum(V) chloride, molybdenum(VI) fluoride, N,N-dimethylhydrazine, ammonia, azidotrimethylsilane, niobium(V) chloride, niobium(V) ethoxide, bis(methyl-cyclopentadienyl) nickel(II), phosphine, tert-butylphosphine, tris(trimethylsilyl) phosphine, cyclopentadienyl(trimethyl)platinum (IV), bis(ethylcyclopentadienyl) ruthenium(II), trimethylantimony, tris(dimethylamido)antimony, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethoxydimethylsilane, disilane, methylsilane, octamethylcyclotetrasiloxane, silane, tris(isopropoxy) silanol, tris(tert-butoxy)silanol, tris(tert-pentoxy)silanol, pentakis(dimethylamido) tantalum(V), tantalum(V) chloride, tantalum(V) ethoxide, tris(diethylamino)(tert-butylimido) tantalum(V), bis(diethylamido)bis(dimethylamido) titanium(IV), tetrakis(diethylamido) titanium(IV), tetrakis(dimethylamido)titanium(IV), tetrakis(ethylmethylamido) titanium(IV), titanium(IV) bromide, titanium(IV) chloride, titanium(IV) tert-butoxide, vanadium (V) oxytriisopropoxide, bis(tert-butylimido)bis(dimethylamido) tungsten(VI), tungsten hexacarbonyl, tungsten(VI) chloride, tungsten(VI) fluoride, tris(N,N-bis(trimethylsilyl)amide) yttrium(III), yttrium(III) butoxide, diethylzinc, tetrakis(diethylamido) zirconium(IV), tetrakis(dimethylamido) zirconium (IV), tetrakis(ethylmethylamido) zirconium(IV), zirconium(IV) bromide, zirconium(IV) chloride, and/or zirconium(IV) tert-butoxide. The electrode active material is a positive electrode active material comprising spinel, olivine, carbon-coated olivine, lithium iron phosphate (LiFePO4), metal containing compound of formula (LixM1yM2z1PO4, Li1+x1Ni alpha Mn beta Co gamma Met1 delta O2-z2Fz2, An1B2(XO4)3) (S1) and/or vanadium oxide. The electrode active material is a negative electrode material comprising graphite, amorphous carbon, lithium titanate (Li4Ti5O12), metal containing compound of formula (MX1-x1Ax1Li2-y1By1Ti6-z3Cz3O14-tQt) (S2), tin alloys, silicon alloys, intermetallic compounds, and/or lithium metal. The surface active agent comprises a first surface modification agent and a second surface modification agent, where the first surface modification agent is an organometallic compound of (A) and (B), and the second surface modification agent is ammonia, phosphine, a halophosphine, a alkylphosphine, a haloalkylphosphine, an alkylamine, and/or moisture. The surface of the active material is alternately treated for 1-1000 times with the first and the second surface modification agents. The surface of the active material is treated with plasma. The plasma is generated by applying radiofrequency discharge on fluorine based gas. The fluorine based gas is F2, fluorine containing compounds (Cq(F2)q+2), (Cq(F2)q), or (Cq(F2)q-2).M = metal;R8, R9 = alkoxide, alkyl, aryl, or aminealkyl (optionally substituted), halo or H; andp = 1-6;M1 = vanadium, chromium, magnesium (mg), iron, cobalt, or nickel;M2 = IIA, IIIA, IVA, VA, VIA or IIIB metals having an ionic radius less than the ionic radius of Fe2+;Met1 = mg, zinc, aluminum, gallium, boron, zirconium or titanium;MX = barium, strontium, calcium, Mg, lead, or tin;x, y, z1, alpha , beta = 0-1;x1 = 0-0.4;gamma = 0-2;delta = 0-0.2;z2, x1, y1, z3, t = 0-0.5;n1 = 0-3; andq = 1-20.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymeric binder is polyvinylidene difluoride (PVDF), and/or PVDF-hexafluoropropylene. The conductive filler is carbon black, carbon fiber, graphite, and/or a metallic nano powder. The concentration of the surface modification agent in the slurry is 0.00001-5 wt.%.