TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method (I) further comprises: (d) removing a portion of the silicon dioxide to expose a portion of the electronic or solar grade wafer surface as the planar seed before depositing the silicon over layer, depositing a silicon dioxide optical window (124) layer over the silicon over layer, and removing the silicon dioxide optical window layer and the release layer after converting the silicon over layer into recrystallized high crystalline quality silicon; (e) using a feedback control system based on a crystalline quality or melt temperature profile of the molten silicon over layer to create a uniform melt zone during a full length scan in the direction orthogonal to the vertical silicon over layer epitaxy when using the shaped heat source; (f) using seeding carrier heater to heat the seeding carrier to greater than 600 degrees C, preferably 1000-1200 degrees C before melting the portion of the silicon over layer; (g) using an inert gas curtain or an air evacuated environment to create a clean manufacturing and melting environment by controlling and minimizing chemical oxidation during the melting of the first and second portions of the silicon over layer and recrystallization of the silicon over layer into the recrystallized high crystalline quality silicon; and (h) doping the silicon over layer using a boron or phosphors silicon dioxide cap over the silicon over layer to tailor the electrical conductivity of the recrystallized high crystalline quality silicon before depositing the sacrificial silicon dioxide window layer. The conversion of the silicon over layer into recrystallized high crystalline quality silicon includes: using a shaped heat source to melt a portion of the silicon over layer, where the portion is in contact with the planar seed to form a vertical silicon over layer epitaxy; and scanning the shaped heat source in a direction orthogonal to or at a non-zero angle to the vertical silicon over layer epitaxy to form an in-plane and horizontal silicon over layer epitaxy. The method (II) further comprises: adhering to a surface of or embedding into the high-temperature substrate the planar seed before depositing the low crystalline quality crystal silicon over layer over the planar seed, and capping the low crystalline quality silicon over layer with the coating of silicon dioxide; using a surface tension reduction gas curtain before melting the first portion of the silicon over layer, where the surface tension reduction gas curtain includes a processing gas that flows above the surface of the silicon over layer to reduce surface tension of molten silicon over layer to increase wetting and spreading of the molten silicon over layer onto the high-temperature substrate; the step (e) as above per se; using a substrate heater to heat the high-temperature substrate to greater than 600 degrees C, preferably 1000-1200 degrees C before melting the portion of the silicon over layer; depositing at least one diffusion barrier to the surface of the high-temperature substrate before adhering the planar seed and before depositing the silicon over layer over the planar seed; the steps (g) and (h) as above per se; and depositing a transparent conductive oxide layer before adhering the planar seed and before depositing the silicon over layer over the planar seed. The adhering is achieved by chemical, mechanical or electrostatic adhesion onto a far-edge of the high-temperature substrate. The scanning includes relative motion of the energy sources either linearly or rotationally with respect to the high-temperature substrate. Preferred Components: The coating of silicon dioxide release layer has a thickness of 1-20 mu or greater than 0.5 mu . The silicon over layer: has a thickness of 40-50 mu or grater than 1 mu ; and comprises silicon that exhibits an amorphous grain structure and/or silicon with a polycrystalline grain structure. The shaped energy heat source: is a linear laser line source (126) or a scanning Gaussian beam with a laser fluence and wavelength sufficient to penetrate and melt the silicon over layer, a focus lamp, a scanning electron beam, a scanning ion, a hot wire or a filament; is a laser source that has an exposure profile with a full width half maximum width greater than 50 mu (preferably 100 mu -1 mm); and is a continuous wave or operates at a high repetition mode of operation rate. The high-temperature substrate: is a high-temperature glass panel substrate, and has a softening temperature of greater than 1550 degrees C and remaining solid when in contact with the molten silicon over layer; or is oxide of aluminum, oxide of silicon, oxynitride, silicon aluminum oxynitride, silicon carbide, ceramic or mullite. The planar seed has a thickness of 30-50 mu . The processing gas includes a combination of carbon monoxide or carbon dioxide with dry oxygen; a combination of nitrogen with dry ammonia; or a combination of nitrogen and hydrogen. EXAMPLE - No suitable example given.