NOVELTY - The manufacture of an optical scattering transparent conducting oxide (TCO) layer on a substrate, comprises depositing the TCO layer on the substrate, in which the substrate is moved and coated in a coating plant at a coating source with a ceramic or metallic target in a direction of transport, structuring the surface of the TCO layer by wet etching process for a light-scattering property, and thermally activating the etched layer using rapid thermal processing. The substrate coating takes place at a substrate temperature of room temperature to 180 degrees C.    USE - The method is useful for manufacturing an optical scattering transparent conducting oxide (TCO) layer on a substrate for solar cells or solar modules (claimed), where TCO layer is useful as transparent electrode in thin film solar cells or flat screens, as blocker layer in a selective layer system for glasses or as infrared reflecting layer.    ADVANTAGE - The method is capable of economically manufacturing the transparent conducting oxide layer on the substrate without losses in the optical and electrical properties in an optimum and energy-efficient manner.    DETAILED DESCRIPTION - The method for manufacturing an optical scattering transparent conducting oxide (TCO) layer on a substrate, comprises depositing the TCO layer on the substrate, in which the substrate is moved and coated in a coating plant at a coating source with a ceramic or metallic target in a direction of transport, structuring the surface of the TCO layer by wet etching process for a light-scattering property, and thermally activating the etched layer using rapid thermal processing. The substrate coating takes place at a substrate temperature of room temperature to 180 degrees C. The thermal activation is carried out on the partial area of the substrate along a line transverse to the direction of transport by impulse energy input using electromagnetic radiation or particle bombardment for the transmission and electric conductivity of the TCO layer. The thermally activated area extends over the whole width of the substrate transverse to the direction of transport. The thermal activation takes place by lasers, gas discharge lamps, electron ray, or flash- or halogen lamp. The exposure time of the energy input is 1 mu s to 1 s. The deposition of the TCO layer takes place with a stoichiometry suitable for the desired transparency and electric conductivity. An amorphous silicon or amorphous and microcrystalline silicon based absorber is used in the method.