NOVELTY - A conductive composition (C1) for a front electrode busbar (80) of a silicon solar cell, comprises: a metallic powder, a solder powder, a curable resin, a reducing agent, and a curing agent.    USE - As conductive composition for a front electrode busbar of a silicon solar cell (claimed) used in solar power generation.    ADVANTAGE - The conductive composition for busbar does not fire through the silicon nitride film as a result does not form a contact surface with the n-type layer. Thus, recombination of electrons and holes can be minimized in a region below the busbar. Accordingly, open circuit voltage of the silicon solar cell is increased which increases conversion efficiency. Thus, by using the composition, it is possible to provide a new silicon solar cell with excellent photovoltaic efficiency and is economical also. Moreover, by using copper as the conductive powder, a general high-priced silver paste used for manufacturing the front electrode busbar of the silicon solar cell can be replaced with a low-priced conductive composition, thus lowering the price of the silicon solar cell.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacturing a front electrode busbar of a silicon solar cell, involving: applying the composition to the front surface of the silicon solar cell where its front electrode finger line (51) is formed; printing and drying the composition at the front electrode busbar of the silicon solar cell to form a substrate; and heating the substrate at a melting point or more of the solder powder;    (2) a substrate comprising a front electrode busbar of a silicon solar cell formed with the composition (C1);    (3) a silicon solar cell comprising: a silicon substrate (2) having a p-n junction structure; an anti-reflection film layer (30) formed at the front surface of the silicon substrate; an electrode array electrically and mechanically connecting to the front surface of the silicon substrate through the anti-reflection film layer; a second electrode formed at the rear surface of the silicon substrate; and at least one third electrode electrically and mechanically connecting to the first electrode array, which is not connected with the front surface of the silicon substrate, and contains the conductive composition (C1); and    (4) manufacturing the silicon solar cell, involving: forming a silicon substrate having a p-n junction structure; forming an anti-reflection film layer at the front surface of the silicon substrate; forming a first electrode array by printing, drying, and firing a first conductive composition including a metallic powder and a glass flit on the anti-reflection film layer and firing the first conductive composition through the anti-reflection film layer to electrically and mechanically connect to the front surface of the silicon substrate; forming a second electrode by printing and firing a second conductive composition including a metallic powder and a glass flit on the rear surface of the silicon substrate; and forming a third electrode by printing, drying, and firing a third conductive composition (C1) on the anti-reflection film and the first electrode array to mechanically connect to the anti-reflection film, to electrically and mechanically connect to the first electrode array, and not to be connected with the front surface of the silicon substrate.    DESCRIPTION OF DRAWING(S) - The figure shows a view of a process for manufacturing the silicon solar cell.    p-Type silicon wafer substrate (2)    n-Type layer (20)    Anti-reflection film layer (30)    Aluminum rear electrode (61)    Front electrode busbar (80)