NOVELTY - Cleaning and etching junction solar battery comprises providing silicon chip in volume ratio of 1:1:5-1:1:10 with ammonia water, hydrogen peroxide and deionized water, and cleaning; preliminary washing silicon chip using potassium hydroxide solution and de-ionized water; removing silicon wafer into volume ratio of alkaline solution, propanol, additive and deionized water and etching; further etching silicon chip with hydrofluoric acid, nitric acid or hydrochloric acid and deionized water at volume ratio of 1:2:3-1:2:4 at 5-30 degrees C for 5-30 seconds, and taking out.    USE - Method for cleaning and etching junction solar battery for large area solar cell production.    ADVANTAGE - The method solves problem caused by plasma point discharge and amorphous silicon thin film deposition is not uniform.    DETAILED DESCRIPTION - Cleaning and etching junction solar battery comprises (A) providing silicon chip in volume ratio of 1:1:5-1:1:10 with ammonia water, hydrogen peroxide and deionized water, and cleaning at 45-85 degrees C for 1-10 minutes; (B) preliminary washing silicon chip using potassium hydroxide solution and de-ionized water at vol. ratio of 1: 2-1:10 at 45-85 degrees C for 20-120 seconds and taking out, and removing raw edges of saw, where deionized water is at normal temperature; (C) removing silicon wafer into volume ratio of 3:3:1:5-3:3:1:10 alkaline solution, propanol, additive and deionized water for 1-5 minutes at 45-85 degrees C, and etching; (D) further etching silicon chip with hydrofluoric acid, nitric acid or hydrochloric acid and deionized water at volume ratio of 1:2:3-1:2:4 at 5-30 degrees C for 5-30 seconds, and taking out; (E) treating smooth texture and round silicon sheet with hydrochloric acid, hydrogen peroxide and deionized water at vol. ratio of 1:5-1:1:10, and washing for 30-150 seconds at 45-85 degrees C; (F) treating silicon wafer with acid, hydrofluoric acid and deionized water at vol. ratio of 1:1-1:9 for 10-50 seconds at 15-35oC, removing silicon oxide layer on surface; and (G) cleaning silicon chip with water for 1-5 revolutions/minute at 50-100 degrees C.