NOVELTY - Fabricating copper indium diselenide semiconductor film involves providing substrates having copper and indium composite structure; transferring the substrates into furnace (300); introducing gaseous species including hydrogen species and selenide species and carrier gas into the furnace; transferring thermal energy to increase temperature and initiate formation of film on each substrates; maintaining temperature; removing the selenide species from the furnace; introducing a hydrogen sulfide species into the furnace; increasing temperature to third temperature of 500-525 degrees C.    USE - For fabricating copper indium diselenide semiconductor film useful in photovoltaic modules, flexible sheets, building or window glass, automotive, and solar cells.    ADVANTAGE - The method is compatible with conventional systems, which allows cost effective implementation. The hanging device is provided within processing chamber to allow easy transfer and to ensure structure integrity of the copper indium diselenide species (CIS) and/or copper indium gallium diselenide species (CIGS) devices; provides cost-effective method for making thin film solar cell panel.    DETAILED DESCRIPTION - Fabricating copper indium diselenide semiconductor film involves providing substrates having copper and indium composite structure, and including the peripheral region with openings; transferring the substrates into furnace (300), each of the substrates provided in vertical orientation with respect to direction of gravity, the number of substrates defined by number N, where N is greater than 5, the furnace including holding apparatus having first elongated member configured to hang each of the substrates using the first opening; introducing gaseous species including hydrogen species and selenide species and carrier gas into the furnace and transferring thermal energy into the furnace to increase first temperature to second temperature of 350-450 degrees C and initiating formation of a copper indium diselenide; maintaining second temperature; removing the selenide species from the furnace; introducing a hydrogen sulfide species into the furnace; increasing temperature to third temperature of 500-525 degrees C, while the substrates are maintained in an environment including a sulfur species to extract out at least one selenium species from the copper indium diselenide film.    DESCRIPTION OF DRAWING(S) - The figure shows diagram of furnace.    Furnace (300)    Process chamber (302)    Chamber end cap (304)    Heating element (306)    Turbomolecular pump (310)    Rotary pump (312)    Gas injection pipe (314)    Conductance valve (318)