TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The material of elongated structure and the material of seed are semiconductor materials. The core/shell structure is: spherical or non-spherical in shape and is positioned concentrically or non-concentrically within the elongated structure; is spherical in shape, having at least one shell, each shell having a thickness of 0.2-20 nm; or is elongated in shape. The length of the longest axis of the structure is 6-100 nm. The diameter of the structure is 1.5-10 nm. The elongated shaped core/shell structure has an aspect ratio larger than 1.8, preferably 1.8-50. The core/shell structure is: a core/multishell structure; or spherical core/spherical shell, spherical core/elongated shell, or elongated core/elongated shell. The core of the core/shell structure is spherical in shape and has a diameter of 1-20 nm, or is rod-like in shape, where the length of the rod-like longest axis is 5-500, preferably 10-100 nm, the thickness of the rod like core is 2-20, preferably 2-10 nm, and the rod-like core has an aspect ratio of 1.8-50. The nanostructure comprises an elongated structure of a first material, embedding a core/shell structure containing a core of a second material and at least one shell of a further material, where each of the first, second and further materials are selected so that adjacent materials are different from each other. The shell material is selected to have a polymorphic crystal form to enable anisotropic growth on it, where the material enabling anisotropic growth has a cubic (zinc blend), and a non-cubic crystal structure including hexagonal (wurtzite), monoclinic, orthorhombic, rhombohedral or tetragonal crystal structure. The core/shell structure is elongated core/elongated shell, elongated core/elongated shell(1)/elongated shell(2) (both preferred), spherical core/spherical shell, spherical core/spherical shell(1)/spherical shell(2), spherical core/elongated shell, spherical core/spherical shell(1)/elongated shell(2), or spherical core/elongated shell(1)/elongated shell(2). The seed structure is a rod element of a single material. The elongated structure comprises the rod element of a single material which is positioned concentrically or non-concentrically in the elongated structure, where the rod element is positioned concentrically in the elongated structure, with the thickness of the elongated structure material along one of the axis, in comparison to the other axis, is different. The thickness of the elongated structure material along the long axis is at least twice, preferably at least three times as large as the thickness along the short axis. Each of the elongated structure material and the rod element material, is metal oxides, insulators or semiconducting materials. The elongated core/shell structure comprises an elongated core and 1-30 numbers of elongated shells. The nanostructure exhibits a type I or a type II band configuration of the core semiconductor versus outer rod semiconductor levels. Preferred Process: The process further comprises isolating the seeded rods. The process comprises: obtaining a pre-made solution of seed structures, where each of the seed structures is a rod element seed, a core/shell seed (both preferred) or a core/multishell seed; and contacting the seed structures, in solution, with a precursors solution of an elongated structure material under conditions permitting elongated growth of the material onto the surface of the seed structure. In the process: the step of contacting is carried out in solution by adding the seed structures together with precursors of the elongated structure material into a growth solution; and adding in conducted by injection into a growth solution that is at a high temperature.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Each of the first material, second (core) material and further material(s) is: metals, metal alloys, metal oxides, insulators or semiconducting materials; or comprises an element of groups IIIB, IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA or VA of block d, or transition metal of groups IIIB, IVB, VB, VIB, VIIB, VIIIB, IB or IIB of block d, preferably scandium, titanium, vanadium, chromium, manganese, iron, nickel, copper, zinc, yttrium, zirconium, niobium, technetium, ruthenium, molybdenum, rhodium, tungsten, gold, platinum, palladium, silver, manganese, cobalt, cadmium, hafnium, tantalum, rhenium, osmium, iridium or mercury; or is a semiconductor material of group I-VII, group II-VI, group III-V, group IV-VI, group III-VI, and/or group IV semiconductors. The semiconductor material of group I-VII include copper(I)chloride, copper(I) bromide, copper(I)iodide, silver(I) chloride, silver bromide and/or silver iodide. The semiconductor material of group II-VI include cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, zinc sulfide, zinc telluride, mercuric sulfide, mercuric selenide, mercuric telluride, cadmium zinc selenide and/or zinc oxide. The semiconductor material of group III-V include indium arsenide, indium phosphide, indium nitride, gallium nitride, indium antimonide, indium arsenide phosphide, indium gallium arsenide, gallium arsenide, gallium phosphide, gallium antimonide, aluminum phosphide, aluminum nitride, aluminum arsenide, aluminum antimonide, cadmium selenide telluride and/or zinc cadmium selenide. The semiconductor material of group IV-VI is lead selenide, lead telluride, lead sulfide, lead tin telluride and/or thallium tin telluride of formula (Tl2SnTe5). The material comprises an element of group IV including carbon, silicon, germanium, tin or lead. The core/shell comprises a core material including indium arsenide, indium phosphide, cadmium selenide, zinc telluride, zinc selenide or zinc selenium telluride. Each of shell materials is cadmium selenide, cadmium sulfide, cadmium sulfur selenide, cadmium zinc selenide, cadmium zinc sulfide, zinc sulfide, zinc selenide or zinc telluride. The material of the elongated structure is cadmium sulfide, cadmium zinc sulfide, zinc sulfide, zinc telluride or zinc sulfide/zinc telluride. The nanostructure is indium arsenide/cadmium selenide/cadmium sulfide, indium phosphide/zinc telluride/zinc sulfide, indium phosphide/zinc selenide/zinc telluride, indium phosphide/zinc selenide/cadmium sulfide, indium phosphide/zinc selenide/zinc sulfide, zinc telluride/zinc selenide/zinc sulfide, zinc selenide/zinc telluride/zinc sulfide, zinc selenium telluride/zinc telluride/zinc sulfide, cadmium selenide/cadmium sulfur selenide/cadmium sulfide, cadmium selenide/cadmium sulfide/cadmium zinc sulfide, cadmium selenide/cadmium zinc selenide/cadmium zinc sulfide, cadmium selenide/cadmium zinc sulfide/zinc sulfide, indium arsenide/cadmium selenide/zinc selenide/cadmium sulfide or indium phosphide/zinc selenide/zinc telluride/zinc sulfide. EXAMPLE - No suitable example given.