NOVELTY - A carbazole porphyrin-quinoxaline copolymer compound (I).    USE - Carbazole porphyrin-quinoxaline copolymer compound for use as an organic semiconductor material in an organic solar cell device. (all claimed).    ADVANTAGE - The copolymer compound has better dissolubility, wide light spectrum absorption range and high energy conversion efficiency.    DETAILED DESCRIPTION - A carbazole porphyrin-quinoxaline copolymer compound of formula (I).    n=1-100;    R1,R2=C 1-32 alkyl.    INDEPENDENT CLAIMS are also included for the following:    (1) a carbazole porphyrin-quinoxaline copolymer preparation method involves performing Stille coupling reaction with presence of catalyst and solvent by using 5,15-dibromo-10,20-alkyl carbazole porphyrin compound of formula (I) and bitributyl tin-quinoxaline compound of formula (II) for obtaining carbazole porphyrinquinoxaline copolymer compound of formula (III).    (2) an organic solar cell device comprising a glass substrate, a conductive layer arranged on the glass substrate, a poly(3,4-ethylidene thiophene)-poly(pstyrenesulfonicacidp) layer coated on the conductive layer, an active layer coated on the poly(3,4-ethylidene thiophene)poly(pstyrenesulfonicacidp) layer, a metal aluminum layer deposited on the active layer and epoxy resin encapsulated on the layers, where the active layer comprises electron donor material and electron receptor material, and the electron receptor material is (6,6) phenyl-C61-methyl butyrate, and the electron donor material is carbazole porphyrinquinoxaline copolymer compound    (3) an organic electroluminescence device comprising a glass substrate, a conductive layer arranged on the glass substrate, a light emitting layer coated on the conductive layer, a lithium fluoride buffer layer evaporated on the light emitting layer and a metal aluminum layer deposited on the buffer layer, where the light emitting layer is the carbazole porphyrin-quinoxaline copolymer compound    (4) an organic FET device comprising doped silicon wafer substrate, silicon dioxide insulation layer arranged on a surface of the doped silicon wafer substrate, an octadecylselyl trichlorine silicane decoration layer coated on the surface, an organic semiconductor layer coated on the octadecylselyl trichlorine silicane decoration layer, a source electrode and an electricity leakage electrode that are arranged on the surface of the organic semiconductor layer, where the organic semiconductor layer is the carbazole porphyrin-quinoxaline copolymer compound.