NOVELTY - The method involves dividing a plate-shaped semiconductor material (2) made of silicon and forming several semiconductor segmentation elements (12). Each semiconductor segmentation element is loaded into each charge portion of the base material. The semiconductor segmentation element is dissolved within the charge portion. The dissolved melt substance is cooled and solidified after heating the semiconductor segmentation element.    USE - Manufacturing method of spherical semiconductor material used in ball semiconductor type solar cell module (claimed).    ADVANTAGE - Since each segmented semiconductor segmentation element is reliably dissolved and solidified, the spherical semiconductor material with uniform volume can be obtained. Hence the photoelectric conversion performance is improved, and the process defect in the assembly of ball semiconductor type solar cell module and appearance defect are reduced.    DETAILED DESCRIPTION - The laser beam is scanned and an affected zone (22) is formed in the inside of plate-shaped semiconductor material. The affected zone is grown on the surface of the plate-shaped semiconductor material, and is segmented by applying external stress to the plate-shaped semiconductor material. The laser beams are irradiated along a direction and are intersected with other. The support film (3) is extended along the plate-shaped semiconductor material before the laser scanning process. The support film is extended so that the semiconductor segmentation element is set in two repetition distances in two different directions (DR1,DR2). The support film is overlapped on top of the base material. The charge portions are positioned so as to correspond with positioning of semiconductor segmentation element. The semiconductor segmentation elements are supported by the support film and the base material. The semiconductor segmentation elements are peeled from the support film. The charge portion is provided with a recessed portion for maintaining the melt substance so that each of the semiconductor segmentation elements is separated at the time of the dissolving. The mold release portion with liquid repellent property is formed in the inner surface of the recessed portion with respect to the melt substance. The volume of semiconductor segmentation element is in the range of 0.01-65 mm3. The semiconductor material is expanded in at the time of solidification. The spherical semiconductor material is polished. An INDEPENDENT CLAIM is included for ball semiconductor type solar module which has semiconductor material doped with impurity.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the spherical semiconductor material.    Plate-shaped semiconductor material (2)    Support film (3)    Semiconductor segmentation element (12)    Affected zone (22)    Directions (DR1,DR2)