TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The sputtering source further comprises: a second sputtering target provided inside the vacuum chamber in a facing relationship to the sputtering target; and an array of magnets provided behind the sputtering target, where a first array of magnets provided behind the sputtering target and a second array of magnets provided behind the second sputtering target, where the polarity of the first array of magnets is oriented opposite the polarity of the second array of magnets. In the sputtering source: the bias source comprises a direct current (DC) power source; the bias field apparatus comprises a louver arrangement having rotatable slats; and the plasma power applicator comprises cathode coupled to plasma power source, where the sputtering source applies voltage of 100 to -300 V to the slats which are separated by 5-30 mm. The system further comprises second sputtering source provided on the processing chamber in a facing relationship to the sputtering source, and a second bias field apparatus, thus facilitating dual-sided deposition simultaneously on the substrate. In the system: the bias power source applies a voltage of 100 to -300 V to each of the bias field apparatus and the second bias field apparatus; and each of the bias field apparatus and the second bias field apparatus comprise a shutter arrangement which comprises many parallel rotatable slats. Preferred Method: The method further comprises: changing the trajectory direction of the ions after the ions exit the aperture, thus controlling the adsorbate angle of incidence of the ions on the substrate; collimating the ions after the ions exit the aperture to thus generate an oblique flux of ions; and applying a magnetic field (BH(max) (maximum energy product)) of greater than 200 kJ/m3 to less than 425 kJ/m3 to the sputtering source. In the method: the step of applying a bias field comprises applying a retarding field to reduce the energy of the ions prior to the ions reaching the substrate; and the step of applying a bias field comprises applying a voltage of 100-(-300) V to a bias field applicator positioned between the substrate and the sputtering source.