NOVELTY - The multilayer structure comprises a base comprising a substrate (11), a first layer formed on the base, and a metallic layer formed on the first layer. The first layer comprises an indium-gallium-selenide film (210), where a gallium to indium molar ratio of the indium-gallium-selenide film is 0-0.8. The metallic layer comprises gallium and indium without a Group VIA material. The first layer and the metallic layer are distinct layers with no reaction between the first layer and the metallic layer. Indium and gallium in the metallic layer form a stack including indium and gallium films.    USE - The multilayer structure is useful for forming Group IB, IIIA and VIA compound absorbers for solar cells.    ADVANTAGE - The multilayer structure is capable of easily forming the absorbers with high performance thus economically and efficiently manufacturing the solar cells with high yield and quality.    DETAILED DESCRIPTION - The multilayer structure comprises a base comprising a substrate (11), a first layer formed on the base, and a metallic layer formed on the first layer. The first layer comprises an indium-gallium-selenide film (210), where a gallium to indium molar ratio of the indium-gallium-selenide film is 0-0.8. The metallic layer comprises gallium and indium without a Group VIA material. The first layer and the metallic layer are distinct layers with no reaction between the first layer and the metallic layer. Indium and gallium in the metallic layer form a stack including indium and gallium films. The first layer further comprises a copper film. The indium-gallium-selenide film and the copper film are distinct films with no reaction between them. The copper film is interposed between the base and the indium-gallium-selenide film and interposed between the indium-gallium-selenide film and the metallic layer. A ratio of number of moles of gallium to the total number of moles of gallium and indium in the metal layer is 0.2-0.3. The metallic layer further comprises a metallic stack including a copper film. The gallium and indium without the Group VIA material form a metal layer (230) different than the copper film.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a multilayer structure.    Substrate (11)    Conductive layer (13)    Precursor stack (200)    Indium-gallium-selenide film of first layer (210)    Metal layer. (220)