NOVELTY - A perylene diimide copolymer comprises dithienopyridine compound (I).    USE - Perylene diimide copolymer for use in organic solar battery device, organic electroluminescence device, organic field effect transistor (all claimed), semiconductor material, organic optical storage, organic non-liner material and organic laser.    ADVANTAGE - The perylene diimide copolymer has high solubility, absorbability, wide absorption range and charge transmission performance, and utilizes high amount solar energy.    DETAILED DESCRIPTION - A perylene diimide copolymer comprises dithienopyridine compound of formula (I).    n=1-100;    R1,-R3=H,1-20C alkyl, 1-20C alkoxybenzene or phenyl;and    R4=1-20C alkyl.    INDEPENDENT CLAIMS are also included for the following:    (1) a method for preparing perylene diimide copolymer, which involves Stille coupling of boron substituted compound of formula (II) and butyl substituted compound (III), in the presence of an organic solvent and catalyst without oxygen to obtain copolymer    (2) an organic solar battery device comprising a glass base material, an electric layer arranged on the glass base material, and a poly-(3,4-ethylideneldioxo thiophene), where a polymer (styrene sulfonic acid) layer is coated on the electric layer, an active layer comprising electronic doner material and an electronic acceptor material coated on the poly-(3,4-ethylideneldioxo thiophene), a metallic aluminum layer is deposited on the active layer and epoxy resin, the electronic feeder material is (6,6) phenyl-C61-methyl butyrate, and the electronic donar material is the perylene diimide copolymer    (3) an organic electroluminescence device sequentially comprising a glass base material, an electric layer arranged on the glass base material, a light emitting layer coated on the electric layer, a lithium fluoride buffer layer deposited on the light emitted layer and an metallic layer deposited on the lithium fluoride buffer layer, where the light emitting layer is formed using perylene diimide copolymer    (4) an organic field effect transistor sequentially comprising a doped silicon sheet base material, a silica insulation layer arranged on surface of the doped silicon sheet base material, a octadecyltrichlorinsilicon decoration layer coated on the silica sheet, an organic semiconductor layer coated on the octadecyltrichlorinsilicon decoration layer, and a source electrode and a drain electrode, which are arranged on a surface of the organic semiconductor layer, where the organic semiconductor layer is the perylene diimide copolymer    (5) an organic field effect transistor, orderly comprising a doped silicon sheet base material, a silicon dioxide insulation layer arranged on the surface of the doped silicon sheet base material, a octadecyltrichlorinsilicon decoration layer coated on the silicon dioxide surface, an organic semiconductor layer coated on the octadecyltrichlorinsilicon decoration layer and a source electrode and a drain electrode which are arranged on the surface of the organic semiconductor layer, where the organic semiconductor layer is the perylene diimide copolymer containing dithienopyridine compound (I)