NOVELTY - A silica-type film formation composition comprises a silicon compound, solvent containing gamma -butyrolactone, solvent (b) having boiling point of 80-100 degrees C, and solvent (c) having boiling point of 180-220 degrees C, and surface conditioner. The solvent comprises 20 %mass or more of gamma -butyrolactone. The content of solvent (b) is 20-50 %mass with respect to total content of solvent. The silicon compound is formed by hydrolyzing and polycondensing monomer component containing silicon-containing compounds (I)-(III).    USE - Composition is used for forming silica-type film for semiconductor device for solar cell system (all claimed). Uses include but are not limited to surface-protection film, buffer coating film, interlayer insulation film, diode, transistor, thermistor, static random access memory, mask read-only memory, integrated circuit element, light emitting diode, charge coupled device, liquid crystal display device, optical waveguide and photoresist.    ADVANTAGE - The composition efficiently forms silica-type film with suppressed generation of clogging of inkjet nozzle, and cracks after precure and hardening. The surface tension of coating film of dry process is homogenized. Evaporation of solvent from coating film surface is homogenized.    DETAILED DESCRIPTION - A silica-type film formation composition comprises a silicon compound, solvent containing gamma -butyrolactone, solvent (b) having boiling point of 80-100 degrees C, and solvent (c) having boiling point of 180-220 degrees C, and surface conditioner. The solvent comprises 20 %mass or more of gamma -butyrolactone. The content of solvent (b) is 20-50 %mass with respect to total content of solvent. The silicon compound is formed by hydrolyzing and polycondensing monomer component containing silicon-containing compounds of formulae: PhSiX3 (I), R1nSiX4-n (II) and R22SiX2 (III).    Ph=optionally substituted phenyl;    X=hydrolyzable group;    R1=1-20C alkyl;    n=0 or 1;and    R2=1-20C organic group.    INDEPENDENT CLAIMS are included for the following:    (1) formation of silica-type film, which involves discharging silica-type film formation composition, performing pattern drawing, forming drawing pattern film by inkjet method, and hardening; and    (2) semiconductor device, which has a substrate, and silica-type film formed on the substrate.