NOVELTY - The photoelectric conversion device comprises a pair of electrodes (210, 220), a first silicon semiconductor layer (230), a second silicon semiconductor layer (240) present in contact with the first silicon semiconductor layer, a third silicon semiconductor layer (250) present in contact with the second silicon semiconductor layer, a first light-transmitting film (310) present in contact with the third silicon semiconductor layer, a fourth silicon semiconductor layer (260) present in contact with the first light-transmitting film, and a fifth silicon semiconductor layer (270).    USE - Used as a photoelectric conversion device such as thin film solar cell.    ADVANTAGE - The photoelectric conversion device can be simply and economically formed with improved photo electric conversion efficiency, excellent light-absorption properties and enhanced electric characteristics.    DETAILED DESCRIPTION - The photoelectric conversion device comprises a pair of electrodes (210, 220), a first silicon semiconductor layer (230), a second silicon semiconductor layer (240) present in contact with the first silicon semiconductor layer, a third silicon semiconductor layer (250) present in contact with the second silicon semiconductor layer, a first light-transmitting film (310) present in contact with the third silicon semiconductor layer, a fourth silicon semiconductor layer (260) present in contact with the first light-transmitting film, a fifth silicon semiconductor layer (270) present in contact with the fourth silicon semiconductor layer, a sixth silicon semiconductor layer present in contact with the fifth silicon semiconductor layer, and a second light-transmitting film present in contact with the sixth silicon semiconductor layer. The first, second, third, fourth, fifth and sixth silicon semiconductor layers, and the first and second light-transmitting films are arranged between the pair of electrodes. The second light-transmitting film includes an organic compound and an inorganic compound, and has a thickness of 0-140 nm. The first and fourth silicon semiconductor layers have p-type conductivity. The second and fifth silicon semiconductor layers have i-type conductivity. The third and sixth silicon semiconductor layers have n-type conductivity. The second silicon semiconductor layer is amorphous silicon semiconductor layer. The fourth silicon semiconductor layer is microcrystalline or polycrystalline silicon semiconductor layer. One of the pair of electrodes has an uneven surface, and is a light-transmitting conductive film. The inorganic compound has an electron-accepting property. The organic compound has a hole-transport property.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a photoelectric conversion device.    Pair of electrodes (210, 220)    First silicon semiconductor layer (230)    Second silicon semiconductor layer (240)    Third silicon semiconductor layer (250)    Fourth silicon semiconductor layer (260)    Fifth silicon semiconductor layer (270)    First light-transmitting conductive film. (310)