NOVELTY - Copper indium gallium selenide (CIGS) solar cell (200) comprises: a glass substrate (210) comprising many arrayed protrusions which protrude from at least one surface of the glass substrate; a light absorbing surface (220) located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions; and a photoelectric transducer structure (250) comprising an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer.    USE - Used as solar cell.    ADVANTAGE - The solar cell utilizes: the arrayed protrusions that increase the absorption of the light and the photoelectric yield; the intermediate layer that improves the junction (i.e. smoothness) between the photoelectric transducer structure and the bottom electrode layer; and the i-type semiconductor layer that improves the junction of the p-type semiconductor layer and the n-type semiconductor layer, thus increasing the quantum efficiency of the photoelectric transducer structure.    DETAILED DESCRIPTION - Copper indium gallium selenide (CIGS) solar cell comprises: a glass substrate comprising many arrayed protrusions which protrude from at least one surface of the glass substrate, where the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined; a light absorbing surface located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions; and a photoelectric transducer structure comprising an n-type semiconductor layer located on the light absorbing surface and made of a CIGS compound, an i-type semiconductor layer located on the n-type semiconductor layer and made of an oxide, and a p-type semiconductor layer located on the i-type semiconductor layer and made of an oxide. An INDEPENDENT CLAIM is also included for manufacturing the CIGS solar cell, comprising: providing the glass substrate; forming the arrayed protrusions on at least one surface of the glass substrate and forming the light absorbing surface on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions; depositing a bottom electrode layer (230) onto the light absorbing surface; depositing an intermediate layer onto the bottom electrode layer; depositing the photoelectric transducer structure onto the intermediate layer; depositing a top electrode layer onto the photoelectric transducer structure; forming a wire on the top electrode layer; and depositing an anti-reflection layer onto the wire.    DESCRIPTION OF DRAWING(S) - The figure shows an enlarged cross-sectional view of a part of the copper indium gallium selenide solar cell.    Copper indium gallium selenide solar cell (200)    Glass substrate (210)    Light absorbing surface (220)    Bottom electrode layer (230)    Photoelectric transducer structure (250)