NOVELTY - The method comprises transferring a substrate into a first chamber of a multichamber system, forming an electrode layer (1320) overlying the substrate in the first chamber, patterning the electrode layer, transferring the substrate to a second chamber of the multichamber system, forming a conductive layer over a surface of the substrate in the first chamber, and forming a copper-bearing material layer overlying the electrode layer in the second chamber or forming a copper layer over the conductive layer in the second chamber.    USE - The method is useful for manufacturing a thin film multi junction and single junction photovoltaic module.    ADVANTAGE - The method is capable of efficiently manufacturing the thin film multi junction and single junction photovoltaic module with excellent photoelectric conversion efficiency and high reliability.    DETAILED DESCRIPTION - The method comprises transferring a substrate into a first chamber of a multichamber system, forming an electrode layer (1320) overlying the substrate in the first chamber, patterning the electrode layer, transferring the substrate to a second chamber of the multichamber system, forming a conductive layer over a surface of the substrate in the first chamber, forming a copper-bearing material layer overlying the electrode layer in the second chamber or forming a copper layer over the conductive layer in the second chamber, transferring the substrate to a third chamber of the multichamber system, forming an indium layer overlying the copper-bearing material layer in the third chamber for forming a copper-indium composite film, transferring the substrate comprising the copper-indium composite film to a fourth chamber of the multi-chamber system, subjecting the copper-indium composite film to a thermal treatment process in the fourth chamber in an environment including sulfur-bearing species, transforming the copper-indium composite film to a copper-indium-disulfide material, and forming a photovoltaic absorber layer for a thin film photovoltaic module using the copper-indium-disulfide material. The substrate is optically transparent, and has a lateral dimension of greater than or equal to 1.5 m. The chambers of the multi-chamber system are mechanically coupled with one another. The substrate comprises soda lime glass, quartz, fused silica, or plastic. The first chamber comprises sputtering targets disposed in series and characterized by resistivity of 100-10 ohm-cm. The electrode layer comprises sub-layers, and is characterized by a total thickness of 300-400 nm. The patterning step comprises forming electrode patterns using a laser ablation technique. The second chamber comprises a vacuum environment with a pressure of less than or equal to 6.2 mTorr. The third chamber comprises a sputtering target made of material comprising 99.999% pure indium. The indium layer is formed overlying the copper-bearing material layer using a direct current sputtering technique. The fourth chamber comprises heaters configured to perform a rapid thermal annealing of the substrate at a temperature of 500 degrees C. The sulfur-bearing species comprise a hydrogen sulfide gas, a sulfur vapor from a solid phase sulfide material, or a deposited sulfur layer overlying the indium layer. The thermal treatment process comprises forming a copper sulfide cap layer over the copper-indium-disulfide material. The method further comprises subjecting the substrate to a dip process for removing the copper sulfide cap layer, transferring the substrate from a first load lock to the first process chamber, and transferring the substrate from the fourth process chamber to a second load lock. The step of forming the photovoltaic absorber layer comprises doping the substrate with sodium, boron or aluminum. The first load lock and the second load lock are part of the multi-chamber system.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a method for large scale manufacture of a thin film photovoltaic module.    Large substrate (1310)    Electrode layer (1320)    Layer of copper indium disulfide material (1360)    New surface region (1368)    Dip process. (1400)