TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Composition: The ink composition comprises In(SenBu))3 and/or Ga(SenBu)3. Preferred Components: The first or second ink contains In(SeR)3 or Ga(SeR)3 (preferably In(SenBu)3 or Ga(SenBu)3). The ratio of In to Ga in the second ink is given by the formula In1-xGax. The first ink or second ink contains MalkM'b(E'R)4 or Malk(E'R). The first polymeric precursor compound is at least one copper indium gallium diselenide (CIGS) polymeric precursor compounds. The first layer is enriched in Cu so that the ratio of Cu to atoms of Group 13 is 1-4 (preferably 1.5, 2, 2.5, 3, or 3.5). The first ink or second ink contains sodium ions (0.01-2 atom percent). The first ink or second ink contains NaIn(SenBu)4, NaIn(SesBu)4, NaIn(SeiBu)4, NaIn(SenPr)4, NaIn(Senhexyl)4, NaGa(SenBu)4, NaGa(SesBu)4, NaGa(SeiBu)4, NaGa(SenPr)4, NaGa(Senhexyl)4, Na(SenBu), Na(SesBu), Na(SeiBu), Na(SenPr), Na(Senhexyl), Na(SenBu), Na(SesBu), Na(SeiBu), Na(SenPr), or Na(Senhexyl).x=0.01-1;Malk=Li, Na, or K;n and i=not defined.    TECHNOLOGY FOCUS - POLYMERS - Preferred Process: The process further involves adding Cu(E'R') or a copper-containing compound to the first or second ink; adding a polymeric precursor compound that is deficient in the quantity of a Group 11 atom to the first or second ink; annealing the layers at a temperature of 450-650 degrees C, optionally in the presence of Se vapor; depositing an ink containing In(SsBu)3 after annealing; depositing a layer of a third ink onto the contact layer of the substrate before step (b), where the third ink contains a third polymeric precursor compound that is enriched in the quantity of a Group 11 atom; exposing the second ink layer to chalcogen vapor; and applying heat, light, or radiation, or adding at least one chemical or crosslinking reagent to the first or second ink before depositing onto the substrate. In the process, each heating process is a process involving converting the layer at 100-450 degrees C. The thickness of the layers after annealing is 500-5000 nanometers, where for any step the thickness per pass is 75-150 nm. The thickness of one layer of step (b) or one layer of step (d), before or after heating, is 10-2000 (preferably 100-1000, especially 200-500, particularly 250-350) nanometers. The steps (b) and (c) are repeated, or steps (d) and (e) are repeated, or steps (b) to (e) are repeated. The steps (b) and (d) are interchanged so that the second ink is deposited onto the contact layer of the substrate before the first ink. The third polymeric precursor compound is enriched in Cu so that the ratio of Cu to atoms of Group 13 is 1.05-1.9 (preferably 1.05, 1.1, 1.15, 1.2, 1.3, 1.4, or 1.5). The steps (b) and (d) are interchanged so that the second ink is deposited onto the third ink layer of the substrate before the first ink. The combined thickness of the first and second ink layers after heating is 20-10000 nanometers. The depositing is done by spraying, spray coating, spray deposition, spray pyrolysis, printing, screen printing, inkjet printing, aerosol jet printing, ink printing, jet printing, stamp printing, transfer printing, pad printing, flexographic printing, gravure printing, contact printing, reverse printing, thermal printing, lithography, electrophotographic printing, electrodepositing, electroplating, electroless plating, bath deposition, coating, wet coating, dip coating spin coating, knife coating, roller coating, rod coating, slot die coating, meyerbar coating, lip direct coating, capillary coating, liquid deposition, solution deposition, layer-by-layer deposition, spin casting, and/or solution casting. The substrate coated with an electrical contact layer is a conducting substrate.s=not defined. EXAMPLE - No suitable example given.