NOVELTY - The method involves forming a disordered nanowire mat (120) on a nanowire seed layer (112), where the disordered nanowire mat includes a set of doped crystalline silicon nanowires (125) placed in a random interwoven pattern and each nanowire includes a fixed end (126) connected to the seed layer, a free end (127) formed away from the seed layer and a body (128) extending between the fixed end and the free end. A p-i-n coating layer (130) is formed over the disordered nanowire mat such that the p-i-n coating layer conformally coats a portion of the body and free end of each of the nanowires.    USE - Method for generating a vertically structured, disordered nanowire photovoltaic conductivity semiconductor solar cell.    ADVANTAGE - The method enables allowing the disordered nanowire mat to operate random interwoven pattern of the nanowires to scatter incident light, thus causing a photon to interact with the nanowires before being absorbed by the p-i-n coating layer and allowing large amount of surface area to be provided by the disordered nanowire mat to facilitate formation of a thin a-Si p-i-n coating layer over large effective area, and hence increasing light absorption and effectively eliminating stability problems associated with thicker a-Si p-i-n layers. The method enables allowing the solar cell to be made from established solar materials using large-area compatible fabrication processes, thus reducing manufacturing cost of production process and facilitating a rapid transition from fossil fuel.    DETAILED DESCRIPTION - The method enables forming a conductive layer by sputtering Indium-Tin Oxide (ITO) onto a glass substrate. The p-i-n layer is formed by depositing amorphous silicon (a-Si) and amorphous silicon-germanium (a-SiGe) using a plasma-enhanced chemical vapor deposition (PECVD) process.    DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional perspective view of a vertically structured, disordered nanowire photovoltaic conductivity semiconductor solar cell.    Nanowire seed layer (112)    Disordered nanowire mat (120)    Doped crystalline silicon nanowires (125)    Fixed end of nanowire (126)    Free end of nanowire (127)    Body (128)    P-i-n coating layer (130)