NOVELTY - A mixed solar cell manufacturing method involves utilizing enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) process for growing n-gallium nitride (GaN) layer, on an indium tin oxide (ITO) conductive substrate. The n-GaN is added with ITO conductive substrate. The sample is processed in an inductively coupled plasma etching machine. Poly(3-hexylthiophene) solution is added on the n-GaN nano-ITO substrate surface. Poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) is coated with poly(3-hexylthiophene) solution of ITO substrate surface, and baked to obtain finished product.    USE - Method for manufacturing mixed solar cell based on a reversal structure of GaN nanorods.    ADVANTAGE - The method enables manufacturing mixed solar cell with high efficiency in converting solar radiation into electricity in commercial and civil power generating systems in a simple and cost-effective manner.    DETAILED DESCRIPTION - A mixed solar cell manufacturing method involves utilizing enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) method for growing n-gallium nitride (GaN) layer with the thickness of 70nm-80nm, on indium tin oxide (ITO) conductive substrate in the presence of hydrogen as carrier gas of 70-90 sccm, at a flow rate of trimethyl gallium of 0.4-0.6 sccm, under microwave power of 600-700 W, at 150-200 degrees C, where the substrate temperature is 350-400 degrees C the growth thickness on the GaN buffer layer is 1.5-2.5 mu m, concentration of the n-GaN layer is 1x 1017 cm-3-1x 1018 cm-3. The n-GaN is added with ITO conductive substrate followed by adding acetone, water and alcohol respectively carrying out ultrasonic cleaning for 2-3 minutes, using de-ionized water to wash for 10-15 minutes. Photo-etching mask process is utilized on the sample surface of mask area and the interval of the mask area is 400-500nm, the thickness is 300-350nm, and the size is 300-400nm. The sample is processed in an inductively coupled plasma etching machine to obtain n-GaN nano-column with the height of 600-700nm and the distance of 400-500 nm. Oxygen (10-15 sccm) is introduced into the machine, and n-GaN nano mask at top end is removed followed by adding acetone and anhydrous alcohol for 3-5 minutes and ultrasonic cleaning with de-ionized water for 10-15 minutes form the nano-column of the n-GaN on the ITO conductive substrate, as a transmission path. Poly(3-hexylthiophene) solution is added on the n-GaN nano-ITO substrate surface, and rotated at speed of 1000-1500 rpm, and spin coated to obtain aluminum foil stock with thickness of 100-150nm, and heated at 100-150 degrees C for 15-20 minutes. Poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) is coated with poly(3-hexylthiophene) of ITO substrate surface, and baked to obtain finished product, where the mixed solar cell comprises a glass protective layer (1), ITO conductive layer (2), a GaN buffer layer (3), n-GaN nanorods (4), poly(3-hexylthiophene) (P3HT) (5), and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS), ITO conductive layer is arranged on the glass protective layer, forming ITO transparent conductive glass, the GaN buffer layer extends to the ITO conductive layer, the n-GaN nanorods extend to the GaN buffer layer with a height of 600-700 nm and an interval of 400-500 nm, the P3HT is arranged on the n-GaN nanorods and the PEDOT:PSS is arranged on the P3HT.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a mixed solar cell.    Glass protective layer (1)    Indium tin oxide conductive layer (2)    Gallium nitride buffer layer (3)    N-gallium nitride nanorods (4)    Poly-3-hexylthiophene (5)