NOVELTY - The structure has a first dielectric layer between a front glass substrate (1) and a second dielectric layer made of silicon oxynitride. The second layer is located between a transparent conductive oxide (TCO) layer (3a) made of indium tin oxide and the first layer. The conductive layer is located between and directly contacts the second layer and a conductive metallic infrared (IR) reflecting layer (3b) made of zinc oxide or tin oxide, and/or zinc aluminum oxide. The structure is provided on an interior surface (1b) of the glass substrate so as to face a semiconductor film (5).    USE - Front electrode structure e.g. glass/silicon oxynitride/silicon nitride/Indium tin oxide structure, glass/silicon oxynitride/indium tin oxide structure, or glass/silicon oxynitride/titanium dioxide/transparent conductive oxide structure, for use in a photovoltaic device i.e. amorphous-silicon based photovoltaic device. Can also be used for a single or tandem thin-film solar cell, cadmium sulfide and/or cadmium telluride photovoltaic device, and a polysilicon and/or microcrystalline silicon photovoltaic device.    ADVANTAGE - The arrangement of the layers in the structure enables reduced visible light reflection, increased conductivity, economical manufacturability, and/or increased IR reflection capability. The TCO layer and the conductive metallic IR reflecting layer realize reduced sheet resistance of an overall electrode to achieve increased conductivity and improved overall photovoltaic module output power, increased reflection of IR radiation by the electrode to reduce the operating temperature of the semiconductor film, reduced total thickness of the front electrode coating to reduce fabrication costs and/or time, improved or enlarged process window in forming the TCO layer, and/or reduced risk of thermal stress-caused module breakage by reflecting solar thermal energy, and reducing temperature difference across a photovoltaic module.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a photovoltaic device.    Front glass substrate (1)    Interior surface (1b)    TCO layer (3a)    Conductive metallic IR reflecting layer (3b)    Semiconductor film (5)