TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The amount of water contained in the etching composition is less than 25 wt.%. The etching composition further contains silicon nitride material residue. Preferred Process: The contacting process is carried out at 40-150 degrees C for 1-200 minutes. The etching composition removes the silicon nitride material of formula: SiNx relative to silicon oxide material (SiO2) by ratio of 50:1. The etching composition is heated inline during delivery to the device structure, and rinsed from the surface by following specified etching action.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The organic solvent is ethylene glycol, neopentyl glycol, propylene glycol, dipropylene glycol, diethylene glycol, ethanol, propanol, butanol, pentanol, hexanol, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol phenyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether, tripropylene glycol methyl ether, propylene glycol monoethyl ether, propylene glycol n-propyl ether, dipropylene glycol n-propyl ether, tripropylene glycol n-propyl ether, propylene glycol n-butyl ether, dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether and propylene glycol phenyl ether (phenoxy-2-propanol), preferably propylene glycol or diethylene glycol. The alkoxysilane compound of formula: SiR1R2R3R4, chosen from trimethoxysilane, triethoxysilane, methyldimethoxysilane, methyldiethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, ethyltrimethoxysilane, dimethylethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, phenyltrimethoxysilane, tetraethoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, n-butyltrimethoxysilane, n-butyltriethoxysilane, hexyltrimethoxysilane and hexyltriethoxysilane, preferably n-propyltrimethoxysilane. The oxidizing agent is chosen from hydrogen peroxide, iron chloride oxone, ammonium peroxomonosulfate, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium nitrate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, ammonium hypochlorite, sodium persulfate, sodium hypochlorite, potassium iodate, potassium permanganate, potassium persulfate, nitric acid, potassium persulfate, potassium hypochlorite, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, tetrabutylammonium peroxomonosulfate, peroxomonosulfuric acid, ferric nitrate, urea hydrogen peroxide and peracetic acid, preferably nitric acid. The etchant is chosen from hydrofluoric acid, ammonium fluoride, ammonium bifluoride, hexafluorosilicic acid, tetrafluoroboric acid, tetrabutylammonium tetrafluoroborate, tetraalkylammonium fluoride of formula: NR4F, alkyl hydrogen fluoride of formula: NRH3F, dialkylammonium hydrogen fluoride of formula: NR2H2F, trialkylammonium hydrogen fluoride of formula: NR3HF, trialkylammonium trihydrogen fluoride of formula: NR3:3HF, preferably ammonium bifluoride.R1-R4=H, linear or branched 1-6C alkyl, 1-6C alkoxy, or phenyl, where at least one of R1-R4 is 1-6C alkoxy;R=liner or branched 1-6C alkyl;andx=not defined.N.B. x is not defined. Preferred Property: The etching composition has pH of 1-7, preferably 3-7.