NOVELTY - Producing (M1) a film of metal particles involves applying a material comprising a metal powder having a particle size of 0.001-10 mu m on a substrate; and drying the material on the substrate to form the film.    USE - For producing a film of metal particles useful for die attachment (claimed) of multichip and single components; in variety of industries including hybrid electric vehicles, wind and solar power generation including photovoltaic cells, transportation, industrial applications, consumer electronics and telecommunications.    ADVANTAGE - The method allows sintering of material at relatively low pressure and relatively low temperature in comparison to conventional sintering processes while achieving substantially the same results; provides high thermal and electrical conductivity bonds with high reliability and flexible bond line thickness; and promotes a substantially uniform bond line thickness subsequent to sintering. Using the method, a first component can be reliably attached to a second component; porosity, thermal and mechanical properties can also be substantially uniform; a bond line having a thickness of 2-100 microns can be achieved; control and uniformity of bond line thickness over both large and small areas can be achieved; reduces loss of material during processing which results in overall cost savings of at least 15-20% in comparison to conventional attachment processes; allows lowering of capital costs; and reduces organic residue such that post-cleaning does not necessary. In the method lead-free bonds are formed without intermetallic. The process is a simple, high yield, high throughput manufacturing process.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a composition (C1) comprising a metal powder having a particle size (d50) of 0.001-10 mu m, where the metal powder comprises 30-95 wt.% of the paste; a binder having a softening point of 50-170 degrees C, where the binder comprises 0.1-5 wt.% of the paste; and a solvent in an amount to dissolve at least the binder;    (2) a film comprising a layer of the composition (C1) having a dry thickness of 5-300 microns;    (3) a lamination process (M2) for applying a layer of metal particles to a component involving placing the component on a film comprising the layer of metal particles on a polymeric substrate to form an assembly, applying heat to the assembly in a range of 50-175 degrees C, applying pressure to the assembly in a range of 0.05-3 MPa; and releasing the component from the assembly, where the layer of metal particles remains on the component and separates from the polymeric substrate;    (4) a method (M3) for attachment involving applying a film of metal particles to a substrate, placing a die on the film to form an assembly, applying a pressure of less than 40 MPa to the assembly, and sintering the assembly at 175-400 degrees C for 0.25 seconds to 30 minutes;    (5) a method (M4) for attachment involving applying a film of metal particles on a back side of a wafer, dicing the wafer to form several dies, placing at least one die on a substrate to form an assembly, applying a pressure of less than 40 MPa to the assembly, and sintering the assembly at 175-400 degrees C for 0.25 seconds to 30 minutes; and    (6) a method (M5) for attachment involving applying a film of metal particles on a back side of a die, placing the die on a substrate to form an assembly, applying a pressure of less than 40 MPa to the assembly, and sintering the assembly at 175-400 degrees C for 0.25 seconds to 30 minutes.