NOVELTY - The diode (100) comprises: a light emitting or absorbing region (140) having a diameter of 20-30 microns and a height of 2.5-7 microns; first terminals (125) spaced apart and coupled to the light emitting region peripherally on a first side, where each first terminal has a height of 0.5-2 microns; a second terminal coupled centrally to a mesa region of the light emitting region on the first side and having a height of 1-8 microns; and an inorganic semiconductor. The mesa region has a height of 0.5-2 microns and a diameter of 6-22 microns, and comprises an alloyed metallic layer.    USE - The diode is useful for a printable composition of a liquid or gel suspension for manufacturing LED-based devices and photovoltaic devices.    ADVANTAGE - The diode ensures simple and economical manufacture of the LED-based devices and photovoltaic devices with high reliability.    DETAILED DESCRIPTION - The diode (100) comprises: a light emitting or absorbing region (140) having a diameter of 20-30 microns and a height of 2.5-7 microns; first terminals (125) spaced apart and coupled to the light emitting region peripherally on a first side, where each first terminal has a height of 0.5-2 microns; a second terminal coupled centrally to a mesa region of the light emitting region on the first side and having a height of 1-8 microns; and an inorganic semiconductor. The mesa region has a height of 0.5-2 microns and a diameter of 6-22 microns, and comprises an alloyed metallic layer, which is deposited before the second terminal and coupled to the second terminal. The second terminal comprises a center metal layer of 0.5-1.5 microns in height and 6-10 microns in diameter. The center metal layer is coupled to the mesa region of the light emitting or absorbing region, and comprises a first layer coupled to the mesa region, a second layer, a third layer, a fourth layer, a fifth layer, a sixth layer and a seventh layer. The first layer, the second layer, the third layer, the fourth layer, the fifth layer and the sixth layer of the center metal layer are deposited in the heights of 180-220 nm, 180-220 nm, 1.5-2.5 microns, 230-270 nm, 1.5-2.5 microns and 230-270 nm, respectively. The second terminal further comprises a die metal having a height of 4-6 microns and a width of 4-11 microns and alloyed to the mesa region of the light emitting or absorbing region and to the center metal layer. The second terminal and the light emitting or absorbing region further comprise nitride passivation on lateral sides, where the nitride passivation is located at a thickness of 0.2-1 microns. Each first terminal comprises via metal having a width of 2-4 microns and a length of 6-11 microns, a first layer coupled to the light emitting or absorbing region, a second layer, a third layer and a fourth layer. The first layer, the second layer, the third layer and the fourth layer of the first terminal are deposited in the heights of 80-120 Angstrom , 450-550 nm, 450-550 nm and 80-120 nm, respectively. The lateral sides of the diode are formed during fabrication on a wafer as a perimeter trench of 0.5-5 microns deep between each diode on the wafer. A second side of the light emitting or absorbing region is formed during fabrication by substrate (105) removal from a second, backside of a wafer. The light emitting or absorbing region is hexagonal, square, triangular, rectangular, lobed, stellate or toroidal, and the diameter is measured opposing face-to-face, where each lateral side of the diode is less than 10 microns in height, has a sigmoidal curvature and terminates in a curved point. The diode has a diameter of 20-30 microns, a height of 5-15 microns, and a width of 20-30 microns. The light emitting or absorbing region of the diode has a surface texture comprising circular rings, curvilinear trapezoids, parallel stripes or a stellate pattern. A contact of the second metal terminal is spaced apart from contacts of the first metal terminals by 1-7 microns in height.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of a diode.    Diode (100)    Substrate (105)    First terminal (125)    Light emitting regions (140)    Buffer layer. (145)