NOVELTY - Preparing gallium-doped monocrystalline silicon, comprises: dismantling a furnace and clearing up a hearth; filling a furnace according to the number of the atoms in each cubic square meter of monocrystalline silicon material by weighing gallium and the rest of monocrystalline silicon, spreading the weighed gallium and indium in a quartz crucible in a monocrystalline silicon layer, placing the quartz crucible in a single-crystal furnace, and deploying a hook-shaped magnetic field outside the single-crystal furnace; and performing vacuumizing and leak hunting in a monocrystal furnace.    USE - The method is useful for preparing gallium-doped monocrystalline silicon, which is useful for a solar cell (claimed) such as battery.    ADVANTAGE - The method is useful for preparing gallium-doped monocrystalline silicon thus providing the solar cell with high photo conversion efficiency (17%), low in light degradation and little in crystal default.    DETAILED DESCRIPTION - Preparing gallium-doped monocrystalline silicon, comprises: (1) dismantling a furnace and clearing up a hearth; (2) filling a furnace according to the number of the atoms in each cubic square meter of monocrystalline silicon material by weighing gallium with purity of 1x 1016-1x 1018 atoms/cm3 of higher than 6N and the rest of monocrystalline silicon, spreading the weighed gallium and indium in a quartz crucible in a monocrystalline silicon layer, placing the quartz crucible in a single-crystal furnace, and deploying a hook-shaped magnetic field outside the single-crystal furnace; (3) performing vacuumizing and leak hunting in a monocrystal furnace; (4) providing the revolving speed of the quartz crucible to 5-10 revolutions per minute (rpm), the pressure in the furnace to 1000-2500 Pa, the flow speed of inert gas to 10-50 slpm and the magnetic field to 1000-3000 GS, and heating and pressurizing the single crystal furnace to obtain a monocrystalline melt; (5) providing the revolving speed of the quartz crucible to 5-10 rpm, the pressure in the furnace to 1000-2500 Pa, the flow speed of inert gas to 10-50 slpm and the magnetic field to 1000-3000 GS, and stabilizing the single crystal silicon melt to 1430-1470 degrees C and then insulating for 1.5-2 hours; (6) providing the revolving speed of the quartz crucible to 5-10 rpm, the pressure in the furnace to 1000-2500 Pa and the distance between a guide cylinder and silicon melting solution to 5-30 mm, preheating the seed crystal, melting the preheated seed crystal and the stabilized monocrystalline melt to melt, and providing the average seeding pull speed to 5-8 mm/minute; (7) shouldering by providing the lifting speed to 0.1-10 mm/minute and the seed crystal revolving speed to 1-10 rpm; (8) providing the lifting speed to 0.1-5 mm/minute and the lifting speed of the 1/2 shoulder to 1-3 mm/minute; (9) providing the lifting speed to 0.5-2mm/minute, the revolving speed of the crystal rod to 1-20 rpm, the revolving speed of the quartz crucible to 5-10 rpm, the pressure in the furnace to 1000-2500 Pa, the flow speed of inert gas to 10-50 slpm, the magnetic field to 1000-3000 GS and the distance between a guide cylinder and silicon melting solution to 5-30 mm, lifting the silicon crystal rod, and isometrically growing the crystal to target length; (10) providing the pressure in the furnace to 1000-2500 Pa, the flow speed of inert gas to 10-50 slpm and the magnetic field to 1000-3000GS and then cooling to obtain the monocrystal silicon rod; and (11) blowing down and taking out a silicon single crystal rod and moving out a quartz crucible.