NOVELTY - A thin-film semiconductor composition (C1) comprises a blend of conjugated polymer and an electron acceptor material, where the composition having a micron-size hexagonal-ring pattern honeycomb structure, and the center of the hexagonal-ring pattern has a thickness that is at least one molecular layer and less than 10 nm.    USE - As thin-film semiconductor composition useful in a photovoltaic device, an article of manufacturing (comprising electronic device, optical device and optoelectronic device), composite and field effect transistor device (claimed).    ADVANTAGE - The composition is substantially or at least 75 percent transparent to visible light. The thin-film semiconductor composition comprising blended conjugated polymer and electron acceptor material has a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light. The semiconductor composition has a micron-size hexagonal-ring pattern honeycomb structure, with the polymer-based blended material concentrated within the hexagonal-ring frame and with the center of the hexagonal-ring pattern having a thickness that is at least one molecular layer and less than 10 nm. The thin-film honeycomb framework structure exhibits efficient charge transfer and charge transport and is at the same time highly transparent for e.g. at least 75% transparent.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) making thin-film semiconductor conductor composition, involving: i) co-dissolving conjugated polymer and electron acceptor material in a non-polar volatile solvent to form a blended solution; ii) depositing a layer of the blended solution of (i) on a hydrophilic solid surface, or a water layer; iii) introducing a high humidity gas over the surface of the blended solution of (ii); and iv) evaporating the solvent of (i) to provide micron-size hexagonal-ring pattern honeycomb polymer-based blended structure, where the center of the hexagonal-ring pattern has a thickness that is at least one molecular layer and less than 10 nm;    (2) a photovoltaic device comprising the composition (C1);    (3) an article of manufacturing comprising the composition (C1);    (4) a composite comprising a substrate and the composition (C1) deposited on the substrate; and    (5) a field effect transistor device comprising the composition (C1).