TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the step (a): the nanocarbon is washed with ultrasonic waves in an organic solvent or an aqueous acid solution; and the nanocarbon is thermally oxidized at 400-600 degrees C for 30 minutes to 5 hours under an air atmosphere. The method further includes, after the step (b), immersing a semiconductive nanocarbon into a tin-containing solution to adsorb tin(II) ions on a surface of the semiconductive nanocarbon and then washing the tin ion-adsorbed semiconductive nanocarbon with wafer. In the step (c), the nanocarbon having the palladium seed is treated with a strong acid to deposit purified palladium. In the step (d): when the electroless nickel plating solution is a normal temperature type of nickel plating solution, the strong acid-treated nanocarbon is immersed into the electroless nickel plating solution at 20-40 degrees C for 5-20 minutes, and when the electroless nickel plating solution is a high temperature type of nickel plating solution, the strong acid-treated nanocarbon is immersed into the electroless nickel plating solution at 70-100 degrees C for 1-10 minutes; and the pH of the electroless nickel plating solution is maintained at 4-6. The step (d) is conducted: under the conditions of a palladium concentration of 0.4-1 g/l, a nickel plating solution concentration of 5-10 g/l, a deposition time of 10-15 minutes, a reaction temperature of 70-80 degrees C, and a pH of 4-5, so as to form a fibrous nickel plated layer; under the conditions of a palladium concentration of 0.4-1 g/l, a nickel plating solution concentration of 5-10 g/l, a deposition time of 5-10 minutes, a reaction temperature of 80-100 degrees C, and a pH of 5-6, so as to form a scalelike nickel plated layer; and under the conditions of a palladium concentration of 0.125-0.2 g/l, a nickel plating solution concentration of 5-10 g/l, a deposition time of 5-10 minutes, a reaction temperature of 80-100 degrees C, and a pH of 5-6, so as to form a spherical nickel plated layer. In the step (e), the nanocarbon having the nickel plated layer is heat-treated at a high temperature of 300-700 degrees C for 3 hours under an inert gas atmosphere, a vacuum atmosphere or an air atmosphere. Preferred Components: The nanocarbon is a semiconductive single-walled carbon nanotube, a semiconductive single-walled carbon nanotube bundle (both preferred), a carbon nanofiber, a multi-walled carbon nanotube, a triple-walled carbon nanotube, a double-walled carbon nanotube or a metallic single-walled carbon nanotube. EXAMPLE - Semiconductive single-walled carbon nanotube bundle was immersed into an ethanol solution, treated with ultrasonic waves for 30 minutes (washing process), immersed into a solution including palladium(II) chloride, hydrochloric acid and water, and then further treated with ultrasonic waves for 10 minutes. Then, the semiconductive single-walled carbon nanotube bundle was immersed into a solution including 0.1 mol tin(II) chloride and 0.1 mol hydrochloric acid for several seconds to sensitize the semiconductive single-walled carbon nanotube bundle, and then the sensitized semiconductive single-walled carbon nanotube bundle was immersed into a concentrated sulfuric acid solution, treated with ultrasonic waves for 3 minutes, immersed into a nickel plating solution including SX-A is (a nickel plating solution including nickel in a concentration of 2.138 M), SX-M (a reducing solution including sodium hypophosphite in a concentration of 2.36 M) and water, and then stirred at 90 degrees C for 10 minutes at a speed of 200 rpm to obtain a nickel-coated single-walled carbon nanotube bundle.