TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The method comprises: employing a multiplicity of k x l solar cells; laminating the multiplicity of solar cells in a rectangular tessellated-resembling array of k rows and l columns to a module front substrate with their front-side facing the module front substrate; electrically interconnecting the finger conductors of the solar module by forming a set of ribbons, where each ribbon is made to be in electric contact with an intended selection of via contacts in the second insulation layer; and laminating a back-side cover substrate onto the back-side of the module front substrate including the multiplicity of solar cells. In the method: the continuous amorphous silicon layer is formed by loading the module into the amorphous silicon deposition chamber for deposition of 1-50 nm thick layer of alpha -silicon by chemical vapor deposition (CVD); a continuous layer of silicon nitride (SiNx) is deposited onto the continuous amorphous silicon layer by CVD; the contact access area is cleaned by plasma ashing in oxygen/nitrous oxide, and a hydrofluoric etching after formation of the first insulation layer; and the continuous metallic phase is deposited by plasma vapor deposition until the continuous metallic phase on the back-side of the wafer has a thickness of 200 nm to 20 mu m, preferably 350-800 nm, where the continuous metallic phase is a stack of metal layers comprising aluminum/nickel-chromium/copper, aluminum/nickel-chromium/tin-copper, or aluminum-silicon/nickel-vanadium/tin-copper, and the aluminum or aluminum-containing alloy is made to be in contact with the amorphous silicon layer.x = not defined.The insulation layers are made by: screen printing a polyimide composition to form a patterned layer having a thickness of 1-10 mu m and linear contact areas with a width of 50-200 mu m running in parallel and aligned above the center of each positive type (P-type) and negative type (N-type) region of the multiplicity of alternating rectangular emitter- and base regions; and curing the obtained layer at 180-200 degrees C. The finger conductors are made by: direct current magnetron sputtering in a multi-chamber tool, a continuous aluminum layer as a semiconductor contact layer, followed by a continuous layer of nickel-chromium (Ni0.8Cr0.2), and then a continuous layer of copper using planar targets and argon as a sputtering gas; and patterning the deposited continuous metal layers by laser ablation that forms linear grooves in the metal layers. The second insulation layer is formed by one of: applying a patterned adhesive or a printable insulating ink onto the metallic phase (finger conductors) of the wafer; depositing an un-patterned continuous second insulation layer, and using the subsequent patterned print of conductive material to selectively etch through, penetrate, melt or dissolve the second insulation layer in selected regions, having the conductive layer acting as a shadow mask to prevent UV curing of the underlying insulator, thus allowing the conductor to penetrate the insulator in the selected areas; or printing the via conductor pads directly onto the cell metalization, and then flowing a self-levelling insulator layer around the conductor pads to form the second insulating layer by UV curing. The ribbons are formed by: applying a suitable length of metal strip or band from a spool; stretching and cutting the metal strip or band to size; forming a strain relief feature and then placing the metal strip or band over the second insulating layer with the correct orientation; and pressing the metal strip or band into the conductive adhesive or solder paste in the access openings. Preferred Components: The metal stack also contains an upper contact layer on the opposite side of the adhesion contact layer comprising copper, tin and silver containing alloys, a copper-tin-silver containing alloy, a copper-tin alloy, tin, or noble metals such as gold, silver or palladium. The metal strip has a constant cross-section and is made of solid copper core coated with pure tin of a thickness of 10-300 mu m, preferably 35-50 mu m, and a width of 0.1-20 mm, preferably 3-6 mm, where each ribbon is oriented and located such that it is parallel and aligned with either an even or an odd numbered row of the rectangular pattern of m-n access points of the solar cells, and is spanning across two solar cells in the same row of the multiplicity of k x l solar cells of the solar module, so that: ribbons aligned with an odd numbered row of the rectangular pattern of m-n access points of an odd numbered solar cell will connect the emitter type regions of this solar cell with the base type regions of the next solar cell in the row; ribbons aligned with an even numbered row of the rectangular pattern of m-n access points of odd numbered solar cell will connect the emitter type regions of this solar cell with the base type regions of the previous solar cell in the row; if the solar cell is the first solar cell in the row, the ribbons aligned with even numbered rows do only span across this solar cell; and if the solar cell is the last cell in the row, the ribbons aligned with odd numbered rows do only span across this solar cell. The crystalline silicon wafer has: one of the geometries comprising squares, pseudo-squares, rectangles or pseudo-rectangles, where pseudo refers to rounded corners, chamfered corners or angled corners; and a length and a width of 50-400 mm, preferably 125 mm. The crystalline silicon wafer has three stratified layers of doped silicon, where: a back-side emitter layer of the crystalline silicon thin wafer has thickness of 0.2-5 mu m, preferably 0.8 mu m and is doped with either of N-type or P-type doping element at 1 x 1016 to 1 x 1020 cm-3 (preferably 1 x 1019 cm-3) or 1 x 1018 to 5 x 1019 cm-3 (preferably 1 x 1019 to 5 x 1019 cm-3); an intermediate base layer of the crystalline silicon thin wafer has a thickness of 10-65 mu m, preferably 40 mu m, and is doped to a concentration of 1 x 1015 to 1 x 1017 cm-3, 5 x 1015 to 5 x 1016 cm-3, or 1 x 1016 to 5 x 1016 cm-3 (preferably 3 x 1016 cm-3) of an doping element of the opposite conductivity of the emitter layer; and a front surface field layer of the crystalline silicon thin wafer has a thickness of 0.2-5 mu m or 1-10 mu m, preferably 1.5 mu m, and is doped to a concentration of 1 x 1016 to 1 x 1020 cm3 (preferably 1 x 1018 to 1 x 1019 cm-3), or 5 x 1017 to 5 x 1019 cm-3 (preferably 5 x 1017 cm-3), of either P-type or N-type doping element. In the crystalline silicon wafer: the emitter layer is doped with either phosphorus or boron atoms, the base layer is doped with boron atoms if the emitter layer is doped with phosphorus atoms, or doped with phosphorus atoms if the emitter layer is doped with boron atoms, and the front surface field layer is doped with either phosphorus or boron atoms; or the emitter layer is doped with phosphorus atoms, the base layer is doped with boron atoms, and the front surface field layer is doped with boron atoms. The surface passivation consists of a first amorphous silicon layer and a second silicon nitride (SiNx) layer deposited onto the first insulation layer except at the linear electric contact access areas. The first insulation layer has a thickness of 1-10 mu m of a polymer having a resistivity of at least 1016 rho ( Omega m), where: the linear electric access area of each emitter- and base region extends across the entire length or width of the solar cell in the form of a linear through-going groove or slit in the first insulation layer, and is located more or less directly above the longitudinal center axis of the corresponding emitter- or base region; and the linear electric access area has a width of 50-200 mu m. In the solar cell, the rectangular electric finger conductor: above each of the linear electric contact access areas is made from a metallic phase with a thickness of 200 nm to 20 mu m, preferably 350-800 nm; is patterned to define one finger conductor above each base- or emitter region which extends across the entire length or width of the solar cell; is located more or less directly above the longitudinal center axis of the corresponding emitter- or base region; and has a distance between two adjacent emitter regions or two adjacent base regions of 0.1-5 mm, preferably 0.5-2 mm. The metallic phase is a metal stack with 300 nm thick layer of aluminum followed by 50 nm thick layer of nickel-chromium (Ni0.8Cr0.2) and 50 nm thick layer of copper, where the aluminum or aluminum-containing alloy is the adhesion layer in contact with the amorphous silicon layer. The second insulation layer is a polyimide layer having a thickness of 1-10 mu m, where each solar cell of the module has a set of access openings with cross-section in a parallel plane of the second insulation layer of 2 x 2 mu m2 filled with an electrically conductive solder paste in electric contact with at least some of the underlying finger conductors. The access openings of each solar cell of the multiplicity of k x l solar cells of solar module are located such that they define a rectangular pattern of n columns and m rows for each solar cell, where: each column is a linear set of m access points above one of either an emitter- or base type finger conductor of the solar cell, and each row defines a linear set of n access points for ribbons oriented perpendicularly in relation to the finger conductors; for every odd numbered solar cell of every row of the multiplicity of solar cells of the solar module, the rectangular pattern of m-n access points is made so that each access point in every odd numbered row in the set of m rows is made to contact the finger conductor in electric contact with the emitter type regions of the solar cell, and every even numbered row in the set of m rows is made to contact the finger conductor in electric contact with the base type regions of the solar cell; and for every even numbered solar cell of every row of the multiplicity of the solar cells of the solar module, the rectangular pattern of m-n access points is made so that each access point in every odd numbered row in the set of m rows is made to contact the finger conductor in electric contact with the base type regions of the solar cell, and every even numbered row in the set of m rows is made to contact the finger conductor in electric contact with the emitter type regions of the solar cell. The ribbons are made of the metal strip. The second insulation layer is discontinuous and made up of a set of rectangular areas deposited onto finger conductors to be configured as shown in figure 9 of the specification, and the via contacts are formed in areas in between the rectangular sections of the insulation layer where the underlying finger conductors are exposed. The finger conductors are given a wave-resembling design by employing a zigzagged opening between the finger conductors as shown in the upper part of the figure 10 as given in the specification. The second insulation layer is discontinuous and made up of a set of adhesive strips of insulating material configured as shown in the lower part of the figure 10 as given in the specification, and the ribbons are made by a tapered metal strip having in-plain stress relief structure as shown in the upper part of the figure 10 as given in the specification. The finger conductors are given a tapered design as shown in the figure 11 of the specification. The second insulation layer is either discontinuous and made up of a set of rectangular areas deposited onto finger conductors to be configured as shown in the lower part of figure 11 as given in the specification, or continuous and made up of a sheet with a set of access openings for the via contacts as shown in the upper part of figure 11 as given in the specification, and the ribbons are made by a tapered metal strip having in-plain stress relief structure as shown in the upper part of figure 10 as given in the specification. EXAMPLE - No suitable example given.