NOVELTY - The solid-state light emitting device comprises a channel formed of multiple-layers of molybdenum sulfide on a substrate, a source contact formed of a first material, and a drain contact that is formed of a second material on the substrate and is present in contact with first and second ends of the channel, where Schottky junctions are formed at an interface of one of the source and drain contacts and the channel exhibiting a photovoltaic effect. The source contact includes a first adhesion layer. The drain contact includes a second adhesion layer. The substrate is made of a flexible polymer.    USE - Used as a solid-state light emitting device.    ADVANTAGE - The solid-state light emitting device exhibits good light emission, photoelectric effect and superconductivity, and improved device characteristics.    DETAILED DESCRIPTION - The solid-state light emitting device comprises a channel formed of multiple-layers of molybdenum sulfide on a substrate, a source contact formed of a first material, and a drain contact that is formed of a second material on the substrate and is present in contact with first and second ends of the channel, where Schottky junctions are formed at an interface of one of the source and drain contacts and the channel exhibiting a photovoltaic effect. The source contact includes a first adhesion layer. The drain contact includes a second adhesion layer. The substrate is made of a flexible polymer. The device further comprises a reflective material located between the multiple-layers of molybdenum sulfide and the substrate, an array of photovoltaic devices, a dielectric layer formed on the multiple-layers of molybdenum sulfide and the source and drain contacts, and first and second gate electrodes formed on the dielectric layer. The distance between the source contact and the drain contact is shorter than the electron-hole recombination length of the device. Each photovoltaic device includes a single channel formed of multiple-layers of molybdenum sulfide and a single source contact and a single drain contact. The photovoltaic devices are connected in series and in parallel. A first subgroup of the photovoltaic devices is connected in parallel and a second subgroup of the photovoltaic devices is connected in series. The dielectric material has a thickness of 5ANGSTROM    to 100 nm.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a solid-state light emitting device.