NOVELTY - The apparatus has an impurity condensation unit (7) which cools and condenses the impurity vapor evaporated from liquid level of silicon molten metal (3). An impurity catching unit (8) of an antipollution device arranges in stand-by position during silicon purification process to receive fall of impurity to prevent contamination of silicon molten metal, when impurity vapor is condensed. Catching unit arranges between condensation unit and liquid level of silicon molten metal during completion or discontinuation of silicon purification process, when impurity is received.    USE - Apparatus for refining silicon used for manufacturing solar cell.    ADVANTAGE - The impurity catching unit of an antipollution device arranges in stand-by position during silicon purification process to receive fall of impurity, when impurity vapor is condensed, hence the contamination of the silicon molten metal can be prevented effectively. The silicon can be purified efficiently. The impurities can be eliminated. The silicon purification process can be performed conveniently.    DETAILED DESCRIPTION - The apparatus has pressure reduction unit which reduces pressure of a process chamber (2) below predetermined pressure. A crucible portion (4) arranges interior of processing chamber to accommodate silicon molten metal. A heating unit (5) heats the silicon in crucible portion by evaporating impurity in heated silicon molten metal. The impurity catching unit has a thermal insulation surface which interrupts the thermal radiation from liquid level of silicon molten metal with respect to impurity of impurity condensation unit in operating position. The catching surface receives the impurity fallen in other side of thermal insulation surface, while impurity of impurity condensation unit is heat-shrunk. An anteroom (22) has the pressure reduction unit which is connected with process chamber through a gate valve (14). The antipollution device is equipped with a catching unit moving mechanism for holding impurity catching unit between process chamber and anteroom, so that the movement of catching unit moving mechanism is possible. The impurity catching unit is made to wait in the anteroom at the time of silicon purification process and is located in the operating position of processing chamber interior during discontinuation and completion of silicon purification processes. A molten metal receiving chamber (21) is provided with a container (23) for receiving hot molten-metal molten silicon by connecting with the process chamber through the gate valve. The hot molten-metal is received and refined silicon with molten metal is collected in receiving indoor container. A material supply chamber (20) is provided with a material input hopper that is connected with the process chamber through gate valve for collecting refined silicon by injecting silicon raw material containing impurity to the crucible of processing chamber interior for performing continuous process. An INDEPENDENT CLAIM is included for silicon refining method involves acquiring impurity of silicon to remove the impurity in the silicon using the silicon refining apparatus by evaporating the impurity vapor from the liquid level of silicon molten metal while operating the antipollution device for preventing contamination of silicon molten metal. The impurity is acquired, while heating pressure-reducing processing chamber interior at less than or equal to 500 Pa temperature in the crucible portion beyond the melting point. The pressure higher than 500 Pa is provided to interior of processing chamber. The impurity acquiring process is repeated, until impurity received by the impurity catching unit is eliminated to prevent contamination of silicon molten metal. The silicon refined in the crucible portion is collected.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon refining apparatus.    Process chamber (2)    Silicon molten metal (3)    Crucible portion (4)    Impurity condensation unit (7)    Impurity catching unit (8)