NOVELTY - Deposition device comprises a susceptor (128) configured to receive substrates (120), and a reactor (136) formed with: a first chamber configured to inject a first gas onto the substrates; a second chamber configured to inject a second gas onto the substrates; a first constriction zone configured to route the first gas from the first chamber to the second chamber; an exhaust portion configured to discharge from the reactor the first and second gas to the substrates; and a second constriction zone configured to route the first and second gases from the second chamber to the exhaust portion.    USE - The device is useful for depositing a material on a substrate using atomic layer deposition process (all claimed).    ADVANTAGE - The device effectively removes excess precursors or material such as physisorbed precursor molecule from the substrate using multiple-staged Venturi effect.    DETAILED DESCRIPTION - Deposition device comprises a susceptor (128) configured to receive one or more substrates (120), and a reactor (136) formed with: a first chamber configured to inject a first gas onto the one or more substrates passing across the first chamber; a second chamber configured to inject a second gas onto the substrates passing across the second chamber; a first constriction zone configured to route the first gas from the first chamber to the second chamber over the substrates, where the first constriction zone is formed between the first chamber and the second chamber, and the first constriction zone is configured so that a pressure of the first gas in the first constriction zone is lower than a pressure of the first gas in the first chamber and a speed of the first gas in the first constriction zone is higher than a speed of the first gas in the first chamber; an exhaust portion configured to discharge from the reactor the first gas and the second gas remaining after exposure to the substrates; and a second constriction zone configured to route the first gas and the second gas from the second chamber to the exhaust portion over the substrates. The second constriction zone is formed between the second chamber and the exhaust portion. The second constriction zone is configured so that a pressure of the second gas in the second constriction zone is lower than a pressure of the second gas in the second chamber and a speed of the second gas in the second constriction zone is higher than a speed of the second gas in the second chamber. An INDEPENDENT CLAIM is included for a method of depositing material on a substrate, comprising causing a relative movement between a susceptor receiving one or more substrates and a reactor, providing a first gas into a first chamber formed in the reactor, injecting the first gas onto the one or more substrates passing across the first chamber, routing the first gas from the first chamber to the second chamber formed in the reactor over the one or more substrates via a first constriction zone formed in the reactor, a pressure of the first gas in the first constriction zone lower than a pressure of the first gas in the first chamber and a speed of the first gas in the first constriction zone higher than a speed of the first gas in the first chamber, routing the first gas from the second chamber to an exhaust portion formed in the reactor over the one or more substrates via a second constriction zone formed in the reactor, providing a second gas into the second chamber, injecting the second gas onto the one or more substrates passing across the second chamber, and routing the second gas from the second chamber to the exhaust portion over the one or more substrates via the second constriction zone, a pressure of the second gas in the second constriction zone lower than a pressure of the second gas in the second chamber and a speed of the second gas in the second constriction zone higher than a speed of the second gas in the second chamber.    DESCRIPTION OF DRAWING(S) - The figure shows a cross sectional diagram of a deposition device.    Process chamber (110)    Substrate (120)    Support plate (124)    Susceptor (128)    Reactor. (136)