NOVELTY - UV cure chamber (200) comprises at least one cure station, where each station comprises a window (209) having first and second sides, a UV light source mounted the first side of the window, a wafer (205) support exposed to the UV source disposed on the second side of the window, an inlet (213) for injecting a purge gas, the inlet positioned on the wafer support side of the window and configured to direct the purge gas in a direction non-parallel to and towards the second the side of the window and an outlet (215) for exhausting the purge gas.    USE - The UV cure chamber is useful: for purging and cleaning process in the annealing and curing of semiconductor wafers; to process work pieces of various shapes, sizes and materials include display face planes, printed circuit boards, solar cell wafers and micro-electro-mechanical systems; and to lower the k-value of dielectric materials comprising oxides deposited by pulse deposition layer processes.    ADVANTAGE - The UV cure chamber: removes porogen accumulation, thus improves throughput and cost by allowing more wafers to be processed between chamber cleans and/or reduces the duration of chamber cleans; and provides strengthening dielectric films, repairing damage to low k films, stabilizing fluorinated silicate glass films, improving hermeticity and selectivity of silicon carbide etch stop films, curing nitrides and oxides, extracting water produced in dielectric (e.g. silicon dioxide) deposition, densification of dielectric materials and increasing stress in dielectric film (e.g. strained gates).    DETAILED DESCRIPTION - UV cure chamber (200) comprises at least one cure station, where each station comprises a window (209) having first and second sides, a UV light source mounted the first side of the window, a wafer (205) support exposed to the UV source disposed on the second side of the window, an inlet (213) for injecting a purge gas, the inlet positioned on the wafer support side of the window and configured to direct the purge gas in a direction non-parallel to and towards the second the side of the window and an outlet (215) for exhausting the purge gas. A major outlet area is a combined sectional surface area perpendicular to the wafer support plane of all features used for exhausting gases; a major inlet area is a combined inlet sectional surface area of all features that serve as final restrictions on the inlet path of a gas; a major outlet to major inlet surface area ratio is greater than 4 for at least one station; and a portion of the inlet unbroken by an outlet spans greater than or equal to 75% of a perimeter around the wafer support.    DESCRIPTION OF DRAWING(S) - The figure illustrates a cross-section schematic diagram of a semiconductor processing chamber.    Chamber (200)    Wafer (205)    Window (209)    Inlet (213)    Outlet (215)