NOVELTY - The method comprises providing a semiconductor substrate with a p-n junction, depositing two dielectric layers, on a front side of a solar cell, having an opening produced by a laser ablation using a plasma-enhanced chemical vapor deposition, and performing a light-induced deposition of an electrically conductive material in the opening to form a front side contact. The step of depositing the dielectric layers is carried out at a temperature of 300-400 degrees C. The two dielectric layers are deposited resulting in a reflection spectrum with two minima.    USE - The method is useful for manufacturing a solar cell.    ADVANTAGE - The method is capable of economically manufacturing the solar cell with high photo conversion efficiency.    DETAILED DESCRIPTION - The method comprises providing a semiconductor substrate with a p-n junction, depositing two dielectric layers, on a front side of a solar cell, having an opening produced by a laser ablation using a plasma-enhanced chemical vapor deposition, and performing a light-induced deposition of an electrically conductive material in the opening to form a front side contact. The step of depositing the dielectric layers is carried out at a temperature of 300-400 degrees C. The two dielectric layers are deposited resulting in a reflection spectrum with two minima. The method further comprises depositing a silicon nitride (SiNx), a silicon oxide (SiOx) or a silicon oxynitride (SiOxNy) layers as an inner anti-reflective layer and a SiOx or SiOxNy layer as an outer layer that faces away from a solar cell using a multi-crystalline silicon-based semiconductor substrate. When the light-induced electrodeposition step is performed, the semiconductor substrate is irradiated during a deposition of nickel with a light having a wavelength of 520-535 nm, during a deposition of silver with light having a wavelength of 615-635 nm and/or during a deposition of copper with light having a wavelength of 450-470 nm. The substrate is irradiated at an illuminance of 5500-40000 Lux. A first layer such as SiNx layer has a thickness of 10-100 nm. A second layer such as SiOx or SiOxNy layer has a thickness of 50-200 nm. A refractive index of the outer layer is equal to the refractive index of the material such as ethylene vinyl acetate embedding the solar cell. A deposition rate of the nickel is 0.25-0.30 mu m/minutes, and a deposition rate of the silver is 0.6-1 mu m/minutes.