NOVELTY - A paste composition comprises, prior to firing: a conductive metal component; a glass component; and a vehicle.    USE - The paste composition and the methods are useful for making a photovoltaic cell; for making a photovoltaic cell contact; and for making a solar cell contact (all claimed).    ADVANTAGE - The paste composition achieves (i) non-degradation of passivation stack, (ii) defect free surfaces and void free vias, and (iii) a strong and uniform back surface field (BSF) layer within dot vias and line vias.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are:    (1) a photovoltaic cell comprising a silicon wafer and a back contact on it, the back contact comprising dielectric passivation layers at least fully coated with a non fire-through aluminum (Al) back paste, the Al back side paste comprising, prior to laser firing: a conductive metal component; a glass component; and a vehicle;    (2) a method of making the paste composition, comprising: providing a conductive metal component, a glass component, and a vehicle; and dispersing the conductive metal component, and the glass component in the vehicle;    (3) a method of making a photovoltaic cell contact, comprising: (a) providing a silicon substrate and a locally pre-opened rear passivation layer on it; (b) applying a paste composition on the locally opened rear passivation layer, the paste comprising a conductive metal component, a glass component, and a vehicle; and (c) heating the paste to sinter the conductive metal component; and    (4) a method of making a solar cell contact, comprising: (a) providing a p-type silicon wafer having at least two sides where a first (front) side is texturized; (b) depositing a phosphorus compound on the texturized side to form an emitter; (c) depositing a passivation layer on at least a second (back) side of the silicon wafer; (d) applying an antireflective/passivation surface to both sides of the silicon wafer; (e) applying a back side tabbing silver (Ag) or Ag/Al paste to at least a portion of the passivation layer; (f) applying a back Al paste to the back passivation layer to cover at least a some portion of the back side tabbing Ag or Ag/Al paste; (g) applying a front paste to at least a portion of the antireflection coating on the first side; (h) firing the silicon wafer such that the pastes sinter where front Ag makes contact to silicon while reacting with antireflective coatings; and (i) firing a laser upon at least a portion of the back side paste to drive Al metal through the passivation layer and into the silicon wafer.