TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method: the pattern inhibitor layer is formed: during a screen-printing process; or during a microcontact-printing process. The screen-printing process further comprises applying an inhibitor solution to the first portion of the back surface. The microcontact-printing process further comprises: exposing a pattern stamp to an inhibitor solution; and contacting the back surface of the substrate with the inhibitor solution contained on the pattern stamp to form the pattern inhibitor layer on the first portion of the back surface. In the method: the passivation layer is formed by sequentially exposing the substrate to trimethyl aluminum and water vapor while depositing the aluminum oxide during the selective atomic layer deposition process; the metallic paste comprising aluminum and silver is disposed within the first portion of the back surface while forming the contact layer; the pattern inhibitor layer is removed from the back surface by dissolving the pattern inhibitor layer in a solvent comprising of water, acetone, methyl ethyl ketone, diethyl ketone, benzene, toluene, xylene and/or their derivatives; and native oxides and contaminants are removed from the back surface of the substrate during a preclean process prior to forming the pattern inhibitor layer. The method further comprises heating the metallic paste to form a metallic silicide comprising aluminum silver silicide during a silicidization process, where the contact layer comprises the metallic silicide material. Preferred Components: The pattern inhibitor layer comprises octadecyltrichlorosilane. The inhibitor solution comprises a hydrophobic self-assembled monolayer compound including octadecyltrichlorosilane. The passivation layer has a thickness of 20-80 nm. The contact layer comprises aluminum and silver. The first portion of the back surface has a positive pattern for the contact layer and the second portion of the back surface has a negative pattern for the passivation layer. The first portion of the back surface of the substrate has a surface area ratio 2-10% of the back surface. EXAMPLE - No suitable example given.