NOVELTY - A semiconductor substrate is provided. The semiconductor substrate is contacted with an aqueous solution comprising colloidal metal and/or salt of a metal, where metal is chosen from silver, gold, palladium, platinum, and ruthenium. The obtained semiconductor substrate is optionally rinsed and contacted with copper plating solution containing water soluble copper salt, and complexing agent for copper ion, reducing agent. The copper layer (20) is annealed. The method for electroless deposition of copper layer is enabled.    USE - Method for electroless deposition of copper layer used for wire bonding and semiconductor component (all claimed). Uses include but are not limited to switch, rectifier in power electronic circuit, power semiconductor device, volume conductive diode, thyristor, transistor, polycrystalline diode and solar cell.    ADVANTAGE - The method enables electroless deposition of copper layer with excellent ductility, electrical conductivity, and thermal conductivity, and suppresses the resistivity. The primary contact metal layer and/or secondary contact metal layer acts as a diffusion layer and suppress the diffusion and electromigration of copper atoms.    DETAILED DESCRIPTION - A semiconductor substrate is provided. The semiconductor substrate is contacted with an aqueous solution comprising colloidal metal and/or salt of a metal, where metal is chosen from silver, gold, palladium, platinum, and ruthenium. The obtained semiconductor substrate is rinsed. The obtained semiconductor substrate is contacted with aqueous solution containing reducing agent. The obtained semiconductor substrate is optionally rinsed and contacted with copper plating solution containing water soluble copper salt, complexing agent for copper ion, reducing agent, agent for adjusting the pH value to more than 9.0 such that the agent is not sodium hydroxide, water soluble cyano metal compound, non-ionic surfactant, and water, at a temperature less than the boiling point of the copper plating solution resulting in the formation of a copper layer. The obtained semiconductor substrate is optionally rinsed semiconductor substrate, and the copper layer is annealed. The method for electroless deposition of copper layer is enabled. INDEPENDENT CLAIMS are included for the following:    (1) electroless deposited copper layer; and    (2) semiconductor component (10).    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of semiconductor component.    Semiconductor component (10)    N-doped volume (12,14)    Copper layer (20)    Surface (160)    Contact area (162)