NOVELTY - Method for manufacturing back-contacted back-junction silicon solar cell module involves: A) forming several semi-finished solar cells on crystalline silicon wafer (1); B) laminating semi-finished solar cells and then perform remaining steps of step A); and then C) completing process to form functional solar cells by forming set of ribbon contacts on top of second patterned insulation layer for interconnection of the semi-finished solar cells of module; and D) laminating back-side cover substrate on back-side of module front substrate including the several solar cells.    USE - For manufacturing back-contacted back-junction silicon solar cell module.    ADVANTAGE - The method is cost effective which provides back-contacted back-junction high efficiency solar modules. The second insulation layer has the function of electrically insulating the finger conductors from the module interconnection or ribbons except at specific contact areas where electric contact between the finger conductors and ribbons are intended, analogous to the function of the first insulation layer. This ribbon can be made from a thin layer of electric conducting material with huge surface area which reduces resistive losses in the ribbons to a minimum. The ribbons are advantageously bent or formed in such a way that the stress can be relieved by a small deformation in the ribbon at the bends, thus prevent the stress from causing fracture in the module.    DETAILED DESCRIPTION - Method for manufacturing back-contacted back-junction silicon solar cell module involves A) forming semi-finished solar cells, by i) employing crystalline silicon wafer (1) having layered stratified doped structure having back-side emitter layer and base layer (5), and ii) forming texturing and depositing surface passivation film on front side of wafer, iii) forming back side surface passivation layer by depositing continuous amorphous silicon layer covering entire back side of wafer, and iv) forming first insulation layer onto back side surface passivation layer with linear openings defining electric contact access areas running in parallel and located more or less directly above each of multiplicity of alternating rectangular emitter- and base regions (7), v) forming rectangular metallic electric finger conductor in parallel with and more or less directly above each of the multiplicity of alternating rectangular emitter- and base regions, vi) forming second insulation layer onto the finger conductors with a set of access openings at positions where electric contact with the underlying finger conductor is intended, and vii) forming via contact in each access opening in second insulation layer in electric contact with finger conductor lying below the access opening; B) laminating semi-finished solar cells to module front substrate with their front-side facing the module front substrate in rectangular tessellated-resembling pattern and then perform the eventual remaining wafer process steps from step A) until all wafer process steps including step vii) is performed; and then C) completing process to form functional solar cells of semi-finished solar cells by forming set of ribbon contacts on top of second patterned insulation layer for interconnection of the semi-finished solar cells of module; and D) laminating back-side cover substrate on the back-side of module front substrate including the solar cells.    DESCRIPTION OF DRAWING(S) - The figure shows schematic diagram of front and back-side view of silicon wafer.    Wafer (1)    Front surface field layer (4)    Base layer (5)    Emitter region (6)    Base region (7)    Reference member (8)