TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The method (M2) further comprises: introducing 0.5%-3% nitrogen to cause a lattice match between the termination layer and first surface region; forming a contact layer overlying the second active region, where the contact layer is compatible with a silver and copper-based contact scheme employed in a silicon-based foundry; using the device for manufacture of a solar cell or solar module; and cleaning the first surface region to be substantially free from organic or metallic contaminants, forming termination layer, forming tunnel junction region overlying the buried emitter region, forming the back surface field region overlying the tunnel junction region, and forming the second active cell and forming a contact layer having the contact pattern overlying the back surface field region. The buried emitter layer is formed entirely or partially via diffusion: using a thermal process prior to deposition of the second active cell; and prior to or after loading the silicon substrate into a deposition chamber. The buried emitter layer is formed entirely or partially via ion implantation. The steps providing silicon substrate and first active cell, and subjecting the first active cell region to thermal process and cause formation of first active cell are provided from manufacture of a solar cell having a contact pattern configured for a single junction solar module or the multi-junction monolithically integrated photovoltaic device. Preferred Components: The second semiconductor layer: comprises aluminum phosphide; is carbon or tellurium doped, where a bandgap of the tunnel junction is greater than 2.2 eV and the multi-junction photovoltaic device is in the wafer form; and is doped with a second dopant comprising tellurium, silicon and/or selenium. The first semiconductor layer: comprises gallium phosphide; is carbon or tellurium doped; and is doped with a first dopant comprising carbon, zinc and/or magnesium. A composition of the first semiconductor layer comprises aluminum gallium phosphide compound of formula (AlX1Ga(1-X1)P), and the composition of the second semiconductor layer comprises aluminum gallium phosphide compound of formula (AlY1Ga(1-Y1)P).X1, Y1 = not defined.The composition of first and/or second semiconductor layers comprises gallium indium arsenic nitride aluminum phosphide compound of formula (Ga(In)AsNAlP). The band-gap of the tunnel junction is greater than 1.8 eV. The tunnel junction includes a third semiconductor layer that is provided between the first and second semiconductor layers, such that the first and second semiconductors are adjacent to the third semiconductor layer. The third semiconductor layer is a delta-doped layer including n-type dopant. The termination layer comprises an aluminum or indium for aluminum gallium phosphide nucleation material. The tunnel junction region comprises many doped silicon layers, and a doped gallium and phosphorus bearing layer. The contact layer has a bandgap greater or lesser than the bandgap of the base of the second active cell. EXAMPLE - No suitable example given.