NOVELTY - Rapid-thermal annealing method of amorphous silicon film involves performing ultrasonic cleaning of glass substrate by acetone, alcohol and deionized water, drying, performing plasma-enhanced chemical vapor deposition, forming amorphous silicon film having thickness of 200-300 nm, soaking the resultant silicon film in the hydrofluoric acid and water in ratio of 1:100 for 1-2 minutes, washing by deionized water, performing rapid-thermal annealing treatment, naturally cooling under room temperature, heating under nitrogen gas as protective gas and crystallizing.    USE - Rapid-thermal annealing method of amorphous silicon film used for manufacture of microelectronics e.g. thin-film transistors and solar cell.    ADVANTAGE - The method economically enables rapid-thermal annealing of amorphous silicon film, by a simple process, without environmental pollution.    DETAILED DESCRIPTION - Rapid-thermal annealing method of amorphous silicon film involves performing ultrasonic cleaning of glass substrate by pure acetone, alcohol and deionized water, drying, placing the resultant substrate into a plasma-enhanced chemical vapor deposition reaction chamber, performing plasma-enhanced chemical vapor deposition at 150-250 degrees C under vacuum degree of 1.1 Torr, forming amorphous silicon film having thickness of 200-300 nm under sputtering power of 200 W and frequency of 13.56 MHz, removing the oxide layer of amorphous silicon film using hydrofluoric acid, soaking the resultant amorphous silicon film in the hydrofluoric acid and water in ratio of 1:100 for 1-2 minutes, washing by deionized water, placing the resultant amorphous silicon sample in a rapid-thermal annealing furnace, performing rapid thermal treatment in heating rate of 150-200 degrees C/second, naturally cooling the surface of the film at 640 degrees C under constant temperature for a period of time, cooling the resultant film under room temperature, heating under nitrogen gas as protective gas and crystallizing.