TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The preparation method specifically comprises: (i) using the spray thermal decomposition method for preparing zinc oxide seed film on the ITO glass, comprising (a) orderly conducting ultrasonic cleaning to the ITO glass substrate using trichloroethylene, acetone, and isopropanol for 10 to 25 minutes under the constant temperature of 60-80 degrees C, then using the ultrapure water to wash to clean, at last using the nitrogen to blow to dry, (b) placing the zinc acetate with concentration of 0.1-0.5M and acetic acid with concentration of 0.01-0.05M (the mol ratio of the zinc acetate and the acetic acid is 10:1) orderly in the mixed solution of the ethanol and the distilled water (1:3, vol./vol.), mixing completely, then preparing into the zinc oxide seed layer precursor solution, (c) placing the cleaned ITO glass on the electric heating plate, heating to 350-400 degrees C and then spraying fog seed layer precursor solution, where the spraying time is 2-5 minutes, and obtaining the zinc oxide seed layer with thickness of 20-50 nm, and (d) placing the ITO glass adhesive with zinc oxide seed layer in the tube furnace, heating processing for 45-60 minutes at 350-400 degrees C, and preparing into the zinc oxide seed layer thin film; (ii) using electrochemical method to deposit in the zinc oxide solution to prepare the zinc oxide nano linear array with high orientation, comprising (a) using the standard three electrode electro-deposition system by an electrochemical method in the zinc chloride solution, an ITO thin film is coated with zinc oxide seed layer as the working electrode, molybdenum electrode as counter electrode, saturated calomel electrode as reference electrode, (b) preparing zinc oxide nanowire electro-deposition solution, using zinc chloride (1-5 x 10-4) as the electro-deposition precursor, and potassium chloride (0.1-3.4 M) as the support electrolyte, (c) feeding the solution with oxygen at constant temperature of 70-80 degrees C for 10-20 minutes before the electro-deposition, and in the process of the electro-deposition, conducting the bubbling oxygen treatment to solution, (d) applying -1V vs saturated calomel electrode to the working electrode, where the deposition electric quantity Q is 2.5-50 C/cm2, when the Q exceeds the set value, automatically it stops working, (e) after taking out the sample, using the deionized water to wash, using nitrogen to dry to prepare zinc oxide nanowire array; and (iii) dipping zinc oxide nanowire array for etching to prepare zinc oxide nano-tube array, which is highly oriented, comprising (a) placing the prepared zinc oxide nano linear array into the potassium chloride solution with concentration of 2-3.4 M at 70-80 degrees C constant temperature, and etching for 2-3 hours, and (ii) taking out the sample, using the deionized water to wash, and using nitrogen to dry to prepare zinc oxide nano-tube array. The zinc oxide nanowire array and zinc oxide nano-tube array are obtained at the same time. The zinc oxide seed layer thin film is prepared by spray pyrolysis. The height of the zinc oxide nano-wire is regulated by charge Q; the diameter of the zinc oxide nanowire is regulated by the concentration of potassium chloride, and zinc chloride. The thickness of the pipe wall of the zinc oxide nano-tube is determined by the etching time of the zinc oxide nanowire in the etching solution.