TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method further comprises (e) forming a first sheet and a second sheet on the first and second surfaces, after step (b) but prior to the step (c). Preferred Components: A material for the substrate comprises monocrystalline silicon, monocrystalline germanium or monocrystalline silicon germanium, and the first surface or the second surface is crystalline plane (110) or crystalline plane (112), and the sidewalls of the first groove and the second groove is crystalline plane (111). The maximum doping concentration of the first doping and second doping regions are greater than 5x 1019 cm-3. In case the type of impurities in the first doping region is contrary to the type of impurities in the second doping region: (a1) when the type of impurities in the first doping region is n-type, and the type of impurities in the second doping region is p-type, then the material for the portion of the first sheet adjacent to the substrate is silicon nitride, and the material for the portion of the second sheet adjacent to the substrate is aluminum oxide; and (b1) when the type of impurities in the first doping region is p-type, and the type of impurities in the second doping region is n-type, then the material for the portion of the first sheet (200) adjacent to the substrate is aluminum oxide, and the material for the portion of the second sheet adjacent to the substrate is silicon nitride. In case the types of impurities in the first and second doping regions are same: (a2) when the impurities in both the first and second doping regions are n-type, then the material for the portion of the first and second sheets are silicon nitride; and (b2) when impurities in both the first and second doping regions are p-type, then the material for the portion of the first and second sheets are aluminum oxide. The strip plate is formed of monocrystalline silicon, monocrystalline germanium or monocrystalline silicon germanium, and the side surfaces are crystalline plane (110) or (112), and the third and fourth surfaces are crystalline plane (111). The maximum doping concentration of the first doping and second doping regions are greater than 5x 1019 cm-3. The first doping and second doping regions have impurities of the same type or contrary. The first sheet and second sheet are arranged on the surfaces the first and second doping regions. EXAMPLE - No suitable example given.