NOVELTY - The solar cell (108) comprises a semiconductor layer having a front surface, first doped domains extending from the front surface and into the semiconductor layer, a rear surface, a reflective coating over a portion of the rear surface, second doped domains present along the portion of the rear surface, a first electrical interconnect, and a second electrical interconnect, where the portion of the first doped domain extending from the front surface comprises doped silicon, doped germanium and/or their alloys. The first electrical interconnect is present in contact with the first doped domain.    USE - The solar cell is useful in photovoltaic modules.    ADVANTAGE - The solar cell can be simply and economically fabricated with rear point connections, improved increased energy conversion efficiency and less consumption of energy and without any damages.    DETAILED DESCRIPTION - The solar cell (108) comprises a semiconductor layer having a front surface, first doped domains extending from the front surface and into the semiconductor layer, a rear surface, a reflective coating over a portion of the rear surface, second doped domains present along the portion of the rear surface, a first electrical interconnect, and a second electrical interconnect, where the portion of the first doped domain extending from the front surface comprises doped silicon, doped germanium and/or their alloys. The first electrical interconnect is present in contact with the first doped domain, and the second electrical interconnect is present in contact with the second doped domain. The solar cell further comprises a first dielectric layer present in contact with the front surface, and a second dielectric layer present in contact with the rear surface. The first doped domain extends into a window in the first dielectric layer, and comprises an n-type dopant, where 95 atm.% of the dopant in the portion of the first doped domain extending into the semiconductor layer is arranged within 100 nm of the front surface. The first doped domain has a dopant concentration of 5/asterisk1018 to 5/asterisk1019 atoms/cm3. The semiconductor layer has a thickness of 5-100 microns. The doped domains are located within openings formed through the dielectric, where the openings have an average diameter of 5-100 microns and a spacing of 50-500 microns. The semiconductor layer is doped with a p-type dopant of the second doped domain. The second doped domain extends into a window in the second dielectric layer.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic side perspective view of a photovoltaic module with a portion of the backing layer removed to expose some of the solar cells within the module.    Transparent front sheet (102)    Protective backing layer (104)    Protective seal (106)    Solar cells (108)    Current collectors. (120)