NOVELTY - The method comprises preparing oxidized graphite target, depositing a graphene oxide film on a substrate of the oxidized graphite target by radio frequency magnetron sputtering under argon/oxygen mixed gas, and performing microwave irradiation on the oxidized graphite target to form a laminate of the exfoliated graphite. The oxidized graphite target has a carbon atom content of 87-89 wt.%, oxygen atom content of 11-13 wt.% and an impurity content of 0-3 wt.%. The mixed gas of argon/oxygen has a ratio of 1:0.1-4. The sputtering step is carried out at a pressure of 10 mTorr.    USE - The method is useful for manufacturing graphene oxide thin layer (claimed), which is useful in a LCD device, electronic paper display device, organic electroluminescent display device and a solar cell.    ADVANTAGE - The method is capable of economically and efficiently manufacturing the thin layer with good electrical property and controlled thickness.    DETAILED DESCRIPTION - The method comprises preparing oxidized graphite target, depositing a graphene oxide film on a substrate of the oxidized graphite target by radio frequency magnetron sputtering under argon/oxygen mixed gas, and performing microwave irradiation on the oxidized graphite target to form a laminate of the exfoliated graphite. The oxidized graphite target has a carbon atom content of 87-89 wt.%, oxygen atom content of 11-13 wt.% and an impurity content of 0-3 wt.%. The mixed gas of argon/oxygen has a ratio of 1:0.1-4. The sputtering step is carried out at a pressure of 10 mTorr. The rotating speed of substrate is 5 revolutions per minute. The substrate is silicon wafer. The substrate temperature is maintained at 22-27 degrees C. The method further comprises controlling parameter consisting of thickness, deposition time, rotational velocity and temperature of the substrate. The thickness of the graphene oxide film is 0.9-1 mm. The argon/oxygen gas is injected by the division rate of 1:1. An INDEPENDENT CLAIM is included for a graphene oxide thin layer.