NOVELTY - A surface layer and isolation layer preparation method involves cleaning a silicon sheet, soaking the silicon sheet in a hydrofluoric acid solution, and taking out and cleaning the silicon sheet. A surface layer is prepared by scanning a surface of the silicon sheet by a laser source focused by a lens in an atmosphere of argon gas to obtain the surface layer. An isolated layer is prepared by synchronously conveying oxygen, and continuously scanning edge part of the silicon sheet by the laser source to obtain silicon dioxide isolation layer.    USE - Method for preparing a surface layer and an isolation layer that are utilized in a crystalline silicon solar cell.    ADVANTAGE - The method enables preparing the surface layer and the isolation layer with wave band light reflectivity of 250-1050 nm in a simple, easy and environmental-friendly manner.    DETAILED DESCRIPTION - A surface layer and isolation layer preparation method involves cleaning a silicon sheet, soaking the silicon sheet in a hydrofluoric acid solution for 2-5 minutes, taking out the silicon sheet, and cleaning the silicon sheet with de-ionized water. A surface layer is prepared by scanning a surface of the silicon sheet by a laser source focused by a lens in an atmosphere of argon gas to obtain the surface layer, where laser flow speed is 5-15 L/minute and energy density of the laser source is 0.16 J/cm2 to 0.48 J/cm2 and a ratio between scanning focus light spot radius and adjacent laser pulse focused light spot offset distance is in the range of 9.0x 103-3.4x 104. An isolated layer is prepared by synchronously conveying oxygen, and continuously scanning edge part of the silicon sheet by the laser source to obtain silicon dioxide isolation layer, where the laser flow speed 10-20 L/minute, the energy density of the laser source is 0.16 J/cm2 to 0.80 J/cm2 and the ratio between scanning focus light spot radius and adjacent laser pulse focused light spot offset distance is in the range of 9.6x 103-6.8x 104.