NOVELTY - The method involves forming an emitter layer (20) to a front surface of a semiconductor substrate (10) by ion-implanting a first conductive-type dopant. A back surface field layer (30) is formed to a back surface of the semiconductor substrate by ion-implanting a second conductive-type dopant. An amount of additional dopant doped during formation of the back surface field layer is larger than an amount of the additional dopant doped during formation of the emitter layer when the additional dopant is a dopant other than the conductive-type dopants.    USE - Method for manufacturing a solar cell.    ADVANTAGE - The ion-selection using the mass spectrometer is not performed in the ion-implantation for the back surface field layer that does not directly influence the properties of the solar cell, so that contact resistance with an electrode can be reduced while maintaining the other properties of the solar cell. The method enables avoiding the need of a mass spectrometer, thus reducing manufacturing cost of the solar cell. The amount of the light reaching the p-n junction between the semiconductor substrate and the emitter layer can be increased, thus reducing optical loss of the solar cell. The method enables allowing holes having mobility to be lower than that of the electrodes to move to the front surface of the semiconductor substrate, and not to the back surface of the semiconductor substrate, so that the conversion efficiency of the solar cell can be enhanced. The method enables increasing open-circuit voltage and short-circuit current of the solar cell by an anti-reflection film, thus enhancing efficiency of the solar cell.    DETAILED DESCRIPTION - The additional dopant comprises hydrogen. An INDEPENDENT CLAIM is also included for a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a solar cell.    Semiconductor substrate (10)    Emitter layer (20)    Anti-reflection film (22)    Electrode (24)    Back surface field layer (30)