NOVELTY - The film (10) has a matrix layer (14) in which two quantum dots is provided. First and second base energy levels are excited by projecting multiplexed light upon quantum dots (16,18), first level is greater than second level. The energy transition probability in an energy level higher than energy level difference in which phosphorescent light emission material (20) carries out the light emission transition to form increased mini band. The up-conversion is carried out to the phosphorescent light emission material provided in the matrix layer by carrying out an energy transition.    USE - Wavelength conversion film for photoelectric conversion apparatus (claimed) such as solar cell such as PN-junction type solar cell and PIN junction-type solar cell.    ADVANTAGE - The up-conversion function has excellent conversion efficiency. The transition probability of the energy ban structure can be improved. The conversion efficiency of photoelectric conversion apparatus can be made high.    DETAILED DESCRIPTION - The matrix layer is configured of either a dielectric portion or an organic material in which the band gap is greater than the first base energy level. The matrix layer around each quantum dot forms a selective tunnel obstacle with the combination of band gap of matrix layer, and thickness of each distance between quantum dots and matrix layer. The threshold-energy level difference between a conduction band mini band and a valence band mini band is set to predetermined formula. The long wavelength light is absorbed by the second quantum dot to generate the light of short wavelength from the phosphorescent light emission material in the matrix layer. The diameter of first quantum dot and second quantum dot are set in 2-20 nm. First quantum dot and second quantum dot are respectively arranged alternately at layered form. First quantum dot and second quantum dot are comprised with an indirect transition semiconductor. The band gap is consists of an inorganic material or organic substance, and phosphorescent light emission material is consists of rare-earths ion or a metal ion. The effective refractive index of a wavelength conversion film is set to a specific value. Both the quantum dots are made of silicon and germanium. The rare-earths ion is made of ytterbium ion, erbium ion and thulium ion, and the metal ion is made of manganese ion. The matrix layer is made of silicon monoxide, silicon nitride, and silicon carbide. An INDEPENDENT CLAIM is included for photoelectric conversion apparatus that includes wavelength conversion film arranged on the opposite side to the incident side of the light of a photoelectric converting layer. The wavelength conversion film has optical confinement function to transmit long wavelength light and to reflect short wavelength light. First layer is provided on laminated structure (30) which consists of a dielectric material or organic substance, and second layer is consists of a wavelength conversion film. The thickness of first layer and second layer is set to a predetermined value in an optical wavelength order.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the process for manufacturing wavelength conversion film.    Wavelength conversion film (10)    Matrix layer (14)    Quantum dots (16,18)    Phosphorescent light emission material (20)    Laminated structure (30)