NOVELTY - Forming passivation materials on a substrate (302), comprises: forming a pattern inhibitor layer on back surface of substrate, where pattern inhibitor layer covers first portion of back surface and a second portion of back surface remains substantially free of pattern inhibitor layer; forming a passivation layer (330) comprising aluminum oxide on second portion of back surface, where pattern inhibitor layer is free of material used to form passivation layer; removing pattern inhibitor layer from first portion of back surface; and forming a contact layer (340) on first portion of back surface.    USE - The method is useful for forming passivation materials on a substrate (claimed) which is useful in a silicon-based photovoltaic devices including solar cells.    ADVANTAGE - The method: forms a passivation layer comprising aluminum oxide that provides a negative charge within the layer which prevents or greatly reduces the formation of undesirable shunt currents throughout the photovoltaic device; and provides a dielectric passivation and metallization process sequence that enables manufacturing of a high efficiency crystalline silicon solar cell at an increased throughput.    DETAILED DESCRIPTION - Forming passivation materials on a substrate, comprises: forming a pattern inhibitor layer on a back surface of a substrate, where pattern inhibitor layer covers a first portion of back surface and a second portion of back surface remains substantially free of pattern inhibitor layer; forming a passivation layer comprising aluminum oxide on second portion of back surface using a selective atomic layer deposition process, where pattern inhibitor layer is substantially free of material used to form passivation layer after performing the process; removing pattern inhibitor layer from first portion of back surface; and forming a contact layer on first portion of back surface.    DESCRIPTION OF DRAWING(S) - The figure depicts a view of the substrate after being processed at different steps of a passivation and metallization process sequence.    Substrate (302)    Passivation layer (330)    Contact layer (340)