NOVELTY - A gallium-containing nitride crystal (701, 702) comprises a crystalline substrate member having a length of greater than 5 mm; at least one large-area surface having a semipolar orientation, where the semipolar orientation is miscut from each of the m-plane orientation and the c-plane orientation by at least 5 degrees ; and at least one impurity selected from oxygen, hydrogen, lithium, sodium, potassium, fluoride, chloride, bromide, iodide, silicon, germanium, copper, manganese and iron having an impurity concentration of greater than 1016 cm-3.    USE - As gallium-containing nitride crystal (claimed) useful for manufacture of bulk or patterned substrates for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, power electronics, transistors.    ADVANTAGE - In the gallium-containing nitride crystal, the bi-faceted growth morphology can be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules. The large-area surface having a semipolar orientation allows improved device performance, improved crystallographic quality, reduced impurity incorporation, or increased capability for incorporation of dopants or band-gap modifiers such as aluminum (Al) or indium (In). The hexagonal phase of gallium nitride is a wurtzite-structure crystal with distinct growth sectors. The manufacturing efficiency is enhanced by using seed crystals or plates that are already large in a relatively slow-growing dimension, and performing the predominant crystal growth in a relatively faster growing direction. The large area faces of the seed plates are stable under the pre-selected growth conditions.    DETAILED DESCRIPTION - A gallium-containing nitride crystal (701, 702) comprises a crystalline substrate member having a length of greater than 5 mm; at least one large-area surface having a semipolar orientation, where the semipolar orientation is miscut from each of the m-plane orientation and the c-plane orientation by at least 5 degrees ; and at least one impurity selected from oxygen (O), hydrogen (H), lithium (Li), sodium (Na), potassium (K), fluoride (F), chloride (Cl), bromide (Br), iodide (I), silicon (Si), germanium (Ge), copper (Cu), manganese (Mn), and iron (Fe) having an impurity concentration of greater than 1016 cm-3, where the impurity has a distribution along a direction parallel at least one large-area surface of the crystal containing at least 4 alternating bands of a higher impurity concentration and a lower impurity concentration of at least one impurity, and the higher impurity concentration is 1.05-40 times higher than the lower impurity concentration.    DESCRIPTION OF DRAWING(S) - The figure shows a view of simplified diagram illustrating the crystallographic misorientation between two adjacent wafer-bonded crystals.    First and second nitride crystal; (701, 702)    Adhesion layer (704)    Surfaces (711, 712)