TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: (I) is the only metal oxide precursor used in the method. (I) is used in an amount of 0.1-15 wt.%, based on the total weight of the composition. The substrate is made of glass, silicon, silicon dioxide, a metal- or transition metal oxide, a metal or a polymeric material. Preferred Method: The application of anhydrous composition on the substrate is carried out by coating method, printing method, spraying method, spin coating method, dipping method, meniscus coating, slit coating, slot-die coating or curtain coating. The conversion is carried out thermally at a temperature of greater than 150 degrees C. The method further comprises irradiating the substrate with UV-, infrared or visible radiation before, during or after the thermal treatment.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solvent is an aprotic- or weakly protic solvent, preferably methanol, ethanol, isopropanol, tetrahydrofurfuryl alcohol, 1-methoxy-2-propanol, tert-butanol or toluene. The composition exhibits a viscosity of 1 mPas-10 Pas. Preferred Definitions:    R = -CH3, -CH2CH3, -CH2CH2OCH3, -CH(CH3)2, -CH(CH3)CH2OCH3, -C(CH3)3 or (tetrahydrofuran-2-yl)methyl.    EXAMPLE - Doped silicon substrate (having an edge length of 15 mm, a silicon oxide coating with a thickness of 200 nm, and finger structures made of indium tin oxide-gold) was coated with 100 mu l 5 wt.% solution of coating composition (prepared by dissolving 2.5 g indium-chloro-dimethoxide in 50 ml anhydrous 2-methoxyethanol, adding 1.76 g silver nitrate and stirring under exclusion of light for 12 hours, filtering resulting solid and evaporating the clear solution at 40 degrees C under vacuum, and drying residual solid for 12 hours at 1 mbar) in 2-methoxyethanol by spin coating. Then the coated substrate was heat-treated in air at 350 degrees C for 1 hour. Then the obtained semiconductor layer was coated with a solution of polydimethylsiloxane in butanol by spin coating and then the substrate was annealed for 1 hour at 350 degrees C to obtain indium oxide-containing layer.