NOVELTY - Producing solar cell (100) comprises e.g. (i) providing a crystalline silicon substrate (101), (ii) doping at least one first portion of silicon substrate for generating a base (102) and a second region of the silicon substrate for forming an emitter (103), (iii) forming a combination layer (105) by performing a plasma nitriding or plasma oxynitriding in a plasma made of ammonia gas and/or nitrous oxide gas for generating a base film made of amorphous silicon nitride or amorphous silicon oxynitride and immediate implementing a silicon cover layer made of e.g. amorphous silicon nitride.    USE - The solar cell is useful for multiple solar modules, which are connected in series with a string (claimed).    ADVANTAGE - The solar cell has improved surface passivation, reduces ghost plating, and reduces potential induced degradation-effect in solar modules.    DETAILED DESCRIPTION - Producing solar cell (100) comprises (i) providing a crystalline silicon substrate (101), (ii) doping at least one first portion of the silicon substrate for generating a base (102) and a second region of the silicon substrate for forming an emitter (103), (iii) forming a combination layer (105) by performing a plasma nitriding or plasma oxynitriding in a plasma made of ammonia gas and/or nitrous oxide gas for generating a base film made of amorphous silicon nitride or amorphous silicon oxynitride and immediate implementing a silicon cover layer made of amorphous silicon nitride, amorphous silicon carbon nitride or amorphous silicon oxynitride directly by plasma nitriding or plasma oxynitriding, and subsequent plasma-enhanced chemical vapor deposition (PECVD) process using at least one silicon-containing process gas for depositing, and (iv) contacting base and emitter. An INDEPENDENT CLAIM is also included for the solar cell comprising a crystalline silicon substrate with the base, the emitter and contacts, and a combination layer coated with at least in sections directly on a surface of the crystalline silicon substrate deposited by plasma nitriding or plasma oxynitriding in the plasma made of ammonia gas and/or nitrous oxide gas for generating the base film made of amorphous silicon nitride or amorphous silicon oxynitride and the silicon cover layer made of amorphous silicon nitride, amorphous silicon carbon nitride or amorphous silicon oxynitride obtainable with an immediately adjacent to the base film by PECVD deposition using at least one silicon-containing process gas.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a solar cell.    Solar cell (100)    Crystalline silicon substrate (101)    Base (102)    Emitter (103)    Combination layer (105)