NOVELTY - Multilayered fabricated electrical device (600) comprises: bottom contact layer; top contact layer; and intermediate insulating metal oxide layer between the contact layers, where top contact layer comprises a first top contact layer portion (604) electrically isolated from other top contact layer portion, and the first top contact layer portion includes many spaced apart, electrically conductive interconnects (602) that penetrate the first top contact layer portion in an interconnect-top contact area including top contact material area and electrically conductive interconnect material area.    USE - The device is useful as a solid state battery, a solar cell, or a semiconductor device (claimed).    ADVANTAGE - The device increases usable surface area of electrically conductive interconnects (claimed), and exhibits improved performance, high manufacturing tolerance and low electrical contact resistance.    DETAILED DESCRIPTION - Multilayered fabricated electrical device (600) comprises: a bottom contact layer; a top contact layer; and at least one intermediate insulating metal oxide layer between the top and bottom contact layers, where the top contact layer comprises a first top contact layer portion (604) electrically isolated from at least one other top contact layer portion, and the first top contact layer portion includes many spaced apart, electrically conductive interconnects (602) that penetrate the first top contact layer portion in an interconnect-top contact area, the interconnect-top contact area is defined as a minimum rectangular area of a surface of the first top contact layer portion that contains all conductive interconnects, the interconnect-top contact area includes a top contact material area and an electrically conductive interconnect material area, the conductive interconnect material area is 10-90% of the interconnect-top contact area, and the electrically conductive interconnects are formed of a reflowed material from the top contact layer, the at least one intermediate layer and the bottom contact layer.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic illustration of a vertical cross-section of a thin film solid state device in which interconnects are created by laser perforation.    Device (600)    Electrically conductive interconnects (602)    First top contact layer portion (604)    Second top contact layer portion (606)    Separating etch (608)