TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first substrate and the second substrate each independently comprises: (i) an optionally doped group IV element, an optionally doped IV-IV multielement semiconductor or an optionally doped IV-IV-IV multi-element semiconductor; (ii) a polymorphic phase, oxide, nitride, oxynitride, carbide, oxycarbide, oxynitrocarbide, or hydride of the optionally doped group IV element, the optionally doped IV-IV multi-element semiconductor or the optionally doped IV-IV-IV multi-element semiconductor; (iii) aluminum (Al), aluminum oxide (Al2O3), titanium (Ti), titanium dioxide (TiO2) or any oxide, nitride, oxynitride, carbide, oxycarbide and/or oxynitrocarbide of Ti, titanium tungsten (TiW), niobium (Nb), tantalum (Ta), zirconium (Zr), europium (Er) or lanthanum (La), or a peroskvite compound used in refractory metal-oxide-semiconductor gates, where (i), (ii) and (iii) have an optionally hydroxylated-terminated surface or hydride-terminated surface; (iv) an optionally doped group II-V or III-VI or their tertiary alloys; silicon (Si), germanium (Ge), Si(x)Ge(1-x), Si(1-x-y)Ge(x)C(y), Si(1-x-y)Ge(x)Sn(y)C(z), Ge(x)C(1-x), gallium arsenide (GaAs), Si(3(1-x))Ge(3x)N(4(1- delta )), Ga(1-x)Al(x)As, Si(1-x-y)Ge(x)C(y)O2, Ge(x)C(1-x)O2, Si3N4, Si(3(1-x))Ge(3x)N(4- delta ); TiO2 or any oxide, nitride, oxynitride, carbide, oxycarbide and/or oxynitrocarbide of Ti, TiW, Nb, Ta, Zr, Er or La; Si, SiO2, SiGe, SiGe oxide, SiN, SiC, Al or Al2O3; or boron nitride (BN), boron phosphate (BP), boron arsenide (BAs), boron-antimony (BSb), boron bismuth (BBi), aluminum nitride (AlN), aluminum phosphate (AlP), aluminum arsenide (AlAs), aluminum-antimony (AlSb), antimony-bismuth (AlBi), gallium nitride (GaN), gallium phosphate (GaP), gallium arsenide (GaAs), gallium-antimony (GaSb), gallium-bismuth (GaBi), indium-nitride (InN), indium-phosphate, indium-arsenide, indium-antimony, indium-bismuth, titanium nitride, titanium-phosphate, titanium-arsenide, titanium-antimony, titanium-bismuth, cadmium-selenide, cadmium-sulfide, cadmium-telluride, zinc oxide, zinc-selenide, zinc-sulfide, zinc-telluride, Be(x)Zn(1-x)Se, where x is 0-1, cadmium-zinc-telluride, mercury-cadmium-telluride and mercury-zinc-telluride. The first bonding surface comprises O2H2Si(1x 1)(100) or hydroxy-terminated SiO2 surface (SiO2-O2H2Si), where 5-90% of hydrogen is desorbed from the first bonding surface. The bonding layer consists of silicon, oxygen and hydrogen. The second bonding surface is SiOx, where x is 0-2.4.