NOVELTY - Use of a multilayer structure, comprising a substrate enclosing at least one halogenated polymer and at least one stack material of a layer-A of silicon dioxide and a layer-B of a substituted amine compound disposed between the substrate and the layer-A, in a front and/or rear protective sheet of a photovoltaic module comprising photovoltaic cells covered with an encapsulant, is claimed, where the stack is disposed on a face of the substrate turned towards the encapsulant and optionally on the opposing face of the substrate and the multilayer structure does not contains glass layer.    USE - The multilayer structure is useful in a front and/or rear protective sheet of the photovoltaic module comprising photovoltaic cells covered with the encapsulant (claimed), where the photovoltaic module is used to produce electricity used in farm or solar power station and dwelling and to devices such as mobile phones, ticket machines, bus shelters and lighting equipment.    ADVANTAGE - The multilayer structure can be simply and economically manufactured, and prevents the photovoltaic module from yellowing. The photovoltaic module exhibits high transparency and aging resistance.    DETAILED DESCRIPTION - Use of a multilayer structure, comprising a substrate enclosing at least one halogenated polymer and at least one stack material of a layer-A of silicon dioxide and a layer-B of a substituted amine compound of formula (SiOxNyHz) disposed between the substrate and the layer-A, in a front and/or rear protective sheet of a photovoltaic module comprising photovoltaic cells covered with an encapsulant, is claimed, where the thickness of layer-A is less than or equal to 60 nm, the thickness of layer-B is greater than twice of the thickness of the layer-A, the sum of the thicknesses of the layer-A and the layer-B is 100-500 nm, the stack is disposed on the face of the substrate turned towards the encapsulant and optionally on the opposing face of the substrate and the multilayer structure does not contains glass layer having a thickness of 50 nm or more.    z = less than (x+y)/5, preferably less than (x+y)/10, where x is 0-2, and y is 0-1.