NOVELTY - A crystalline silicon solar cell light concentration diffusion method involves utilizing conductivity-type P-type silicon material, cleaning, and drying. Oxidation process is performed, and cleaned wafer is placed into a diffusion tube to obtain a thick oxide layer followed by passing into the flow of nitrogen, phosphorus oxychloride diffusion source of mixed gas. The temperature is raised to 805 degrees C and diffused with diffusion source-phosphorus oxychloride, and distributed on wafer, and cooled. Silicon wafer after diffusion is cooled to room temperature to get diffused silicon surface sheet.    USE - Method for light concentration diffusion of crystalline silicon solar cell.    ADVANTAGE - The method enables realizing light concentration diffusion of cell with increased integrating degree of the P-N node and a sizing agent, a short-circuit current of the solar cell by 0.2-0.25 A, and efficiency of a cell piece by more than 3%.    DETAILED DESCRIPTION - A crystalline silicon solar cell light concentration diffusion method involves utilizing conductivity-type P-type silicon material, cleaning and drying. Oxidation process is performed on the material at 780-785 degrees C under the conditions of access flow of nitrogen, and cleaned wafer is placed into a diffusion tube for oxidation to obtain 20-25nm thick oxide layer, such as silicon dioxide layer followed by passing into the flow of nitrogen, phosphorus oxychloride diffusion source of mixed gas of nitrogen and phosphorus deposition at 780-785 degrees C and an atmosphere of oxygen, and phosphorus oxychloride chemical reaction for 300-360 seconds, where the main reaction equation is represented as given in the equation of specification. The temperature is raised to 805 degrees C and diffused with diffusion source- phosphorus oxychloride mixed gas of nitrogen, and distributed on a silicon wafer for 20-30 minutes, and cooled to 780-785 degrees C for 500-600 seconds. Silicon wafer after diffusion is cooled to room temperature to get diffused silicon surface sheet with high resistance of 85-90 Omega/square.