NOVELTY - The method comprises exposing a substrate (102) to precursor gases in a first processing region of a deposition chamber, and exposing the substrate to excited inert gas neutral species in a second processing region of the chamber until a desired thickness of the film is reached, and growing a film at a temperature of 400-550 degrees C. The processing regions are fluidically isolated from one another. The precursor gases include silicon (Si)-containing gases and/or germanium (Ge)-containing gases. The method further comprises exposing the substrate to a surfactant precursor.    USE - The method is useful for growing an epitaxial film (claimed), which is useful in a semiconductor device such as a solar cell and a transistor.    ADVANTAGE - The method is capable of efficiently growing the epitaxial film at low temperature with less defect densities thus economically manufacturing the semiconductor device with high carrier mobility and speed.    DETAILED DESCRIPTION - The method comprises exposing a substrate (102) to precursor gases in a first processing region of a deposition chamber, and exposing the substrate to excited inert gas neutral species in a second processing region of the chamber until a desired thickness of the film is reached, and growing a film at a temperature of 400-550 degrees C. The processing regions are fluidically isolated from one another. The precursor gases include silicon (Si)-containing gases and/or germanium (Ge)-containing gases. The method further comprises exposing the substrate to a surfactant precursor. An exposure dosage of the precursor gases is influenced by rotation speed of a rotating substrate support. The thickness of the film is greater than or equal to a monolayer. The excited inert gas neutral species are generated using plasma energy and using laser irradiation. The substrate is exposed to laser irradiation and hydrogen plasma. A surface of the film is heated by laser irradiation. The hydrogen plasma includes a chlorine source.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of processing regions and a substrate of a film.    Substrate (102)    Zone-A (104)    Zone-C (108)    Central axis (112)    Substrate holder. (114)