NOVELTY - A paste composition comprises 50-95 wt.% conductive metal component, and 0.5-15 wt.% glass component comprising at least one glass composition (g1) having glass transition temperature of less than 600 degrees C.    USE - Paste composition is used for manufacturing contact for manufacturing solar cell (all claimed) for semiconductor device.    ADVANTAGE - The solar cell having excellent electrical property, high fill-factor, and low contact resistance is efficiently manufactured, using the paste composition.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) solar cell, which has silicon wafer and contact comprising 50-95 wt.% conductive metal component, 0.5-15 wt.% glass component containing glass composition comprising 55-80 mol% lead oxide, 4-13 mol% silica, 11-22 mol% alumina, 3-10 mol% manganese oxide, 0.5-5 mol% metallic oxide of formula: M2O5 (I) and 0.1-3 mol% metallic oxide of formula: M'O2 (II);    (2) manufacture of solar cell, which involves providing and depositing paste composition on at least one side of silicon wafer and firing wafer at predetermined temperature for predetermined time to fuse glass component and sintering conductive metal component;    (3) manufacture of paste composition, which involves combining conductive metal component, glass component comprising 3-40 mol% silica and 0.1-25 mol% oxide (t1) of transition metal chosen from manganese, iron, cobalt, nickel, copper, titanium, vanadium, chromium, tungsten, niobium, tantalum, hafnium, rhodium, ruthenium, palladium and platinum and vehicle and dispersing conductive metal component and glass component in vehicle; and    (4) manufacture of solar cell contact, which involves applying paste composition comprising conductive metal component, glass component and vehicle on front side of silicon substrate (100) and heating paste to sinter conductive metal component and fuse glass.    M=P, Ta, As, Sb, V or Nb;and    M'=Ti, Zr or Hf.    DESCRIPTION OF DRAWING(S) - The drawing shows the flow diagram of the fabrication of semiconductor device.    Silicon substrate (100)    N-type diffusion layer (200)    Front-side passivation layer/anti-reflective coating (300)    Front electrode (500)    Aluminum back electrode (506)