NOVELTY - Preparation of polyaniline and group II-VI semiconductor compound photovoltaic conversion film involves adding hydrotalcite precursor in amide solvent, stirring, reacting, centrifuging and removing precipitate to obtain transparent colloidal solution (A), immersing pre-treated quartz, silicon or indium-tin oxide conductive glass in polyaniline solution of N-methylpyrrolidone, drying, immersing further in solution (A), drying, repeating immersion process for 2-80 times to obtain polyaniline and hydrotalcite multilayer composite film, and carrying out in-situ vulcanization or selenylation.    USE - Preparation of polyaniline and group II-VI semiconductor compound photovoltaic conversion film (claimed).    ADVANTAGE - The method enables preparation of polyaniline and group II-VI semiconductor compound photovoltaic conversion film with excellent photoelectric conversion property and suppressed agglomeration of group II-VI semiconductor compound.    DETAILED DESCRIPTION - Preparation of polyaniline and group II-VI semiconductor compound photovoltaic conversion film involves preparing hydrotalcite precursor using nitrate and chloride ion as anion and cation chosen from divalent metal ion and trivalent metal ion, adding 0.5-2 g/L hydrotalcite precursor in amide solvent, stirring at speed of 3000-5000 rpm, reacting for 36-72 hours, centrifuging and removing precipitate to obtain clear and transparent colloidal solution (A), immersing pre-treated quartz, silicon or indium-tin oxide conductive glass in 0.2-1 g/L polyaniline solution of N-methylpyrrolidone for 5-15 minutes, drying, immersing further in solution (A) for 5-15 minutes, drying, repeating immersion process for 2-80 times to obtain polyaniline and hydrotalcite multilayer composite film, and carrying out in-situ vulcanization or selenylation. The molar ratio of divalent metal ion and trivalent metal ion is 2-4. The divalent metal ion is chosen from divalent zinc ion, divalent cadmium ion and/or divalent copper ion. The trivalent metal ion is chosen from trivalent aluminum ion, trivalent chromium ion, trivalent gallium ion, trivalent indium ion, trivalent cobalt ion, trivalent iron ion, trivalent lanthanum ion and/or trivalent vanadium ion.