NOVELTY - The heterojunction semiconductor has a bulk layer of semiconductor material, a high-resistivity layer (14) provided over the bulk layer and a microcrystalline beta-silicon carbide layer ( beta -SiC) (24) provided over the high-resistivity layer. The beta -SiC layer is provided by annealing a structure comprising the bulk layer, a high-resistivity layer, SiC seed crystals at the surface of the high-resistivity layer, and the SiC layer, causing the SiC layer to covert into the microcrystalline beta-SiC layer.    USE - Heterojunction semiconductor for wideband gap photovoltaic device e.g., highly-efficient photo-voltaic conversion solar cell.    ADVANTAGE - Higher open circuit voltage output is achieved in a photo-voltaic cell using a wide band gap heterojunction design while lowering the cell unit cost.    DETAILED DESCRIPTION - The bulk layer, the high-resistivity layer, the microcrystalline beta-SiC layer are created by exposing of a top surface of a single-piece semiconductor material to an energy source that causes heating of a portion of the single-piece semiconductor material. Exposing the top surface of the single-piece semiconductor material to the energy source is ceased to cause the single-piece semiconductor material to transform into the structure comprising the bulk layer, the high- resistivity layer, and SiC seed crystals at the surface of the high-resistivity layer. A SiC layer is formed over the high-resistivity layer having the SiC seed crystals. The structure comprising the bulk layer, the high-resistivity layer, the SiC seed crystals at the surface of the high-resistivity layer, and the SiC layer are annealed, causing the SiC layer to covert into the microcrystalline beta-SiC layer. An INDEPENDENT CLAIM is also included for a method for manufacturing a heterojunction semiconductor.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of heterojunction semiconductor as assembled into a photovoltaic cell.    N-type silicon (12)    High-resistivity layer (14)    Microcrystalline beta-silicon carbide layer (24)    Top electrode (26)    Bottom electrode (28)