TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electrode material is indium tin oxide, gold, aluminum, or silver.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The electrode includes at least one small molecule and/or at least one FSP, where at least small molecule is N,N'-bis(2-(trimethylammonium)ethylene)perylene-3,4,9,10-tetracarboxydiimide iodide, N',N'-bis(2-trimethylammonium)ethylene)naphthalene-1,4,5,8-tetracarboxyldiimide iodide, sodium N,N'-bis(3-sulfonatopropyl)naphthalene-1,4,5,8-tetracarboxylic diimide, or sodium N,N'-bis(3-sulfonatopropyl)perylene-3,4,9,10-tetracarboxylic diimide.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The FSP is 2,5-diyl-poly(3-(6-(3-cyanopyridinium-yl)-hexyl)thiophene), 2,5-diyl-poly(3-(6-(4-tert-butylpyridinium-yl)-hexyl)thiophene), or poly(3-(6-diethylphosphonato-hexyl)thiophene)). The number of bilayer is at least two having at least two different FSPs, where the FSP is changed with each repetition of steps (a)-(c). The library of established work function values for electrode/FSP pairs includes multiple bilayer work function data for many different electrode materials and an FSP. EXAMPLE - Cathodic buffer layer consisted of electrostatic layer-by-layer (eLBL) assembled (functionalized semiconducting polymer (FSP):poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate))n) (PEDOT:PSS) multilayer films on freshly cleaned indium tin oxide (ITO) coated glass substrates. The photoactive layer was low band gap poly((4,8-diethylhexyloxyl)benzo((1,2-b:4,5-b')dithiophene)-2,6-diyl)-alt-((5-octylthieno(3,4-c)pyrrole-4,6-dione)-1,3-diyl) (PBDTTPD) and 71C-butyric acid methyl ester (PC71BM) mixed in a bulk heterojunction. The photoactive layer solution was prepared under an inert environment where separate solutions of PBDTTPD and PC71BM in o-dichlorobenzene were stirred at 80 degrees C for 8 hours then mixing the PBDTTPD and PC71BM (1:1.5). This formed a 15 mg/ml solution, which was left to stir at 80 degrees C for 2 hours. A heated spin casting method was used to coat the photoactive layer. The eLbL-modified ITO substrates and the PBDTTPD:PC71BM solution were heated to 90 degrees C in air, and pipette tips were heated to 80 degrees C. Immediately before coating, a heated ITO/(FSP:PEDOT:PSS), substrate was transferred to the spin-coated chuck. The photoactive layer solution (100 mu l) was quickly dispensed and spin-cast at 600 rpm for 1 minute in air, forming a 90 nm thick layer as determined with optical profilometry. The films were covered with a Petri dish and stored in air and darkness for 18 hours. After which, a 20 nm vanadium pentoxide hole transport layer and 80-100 nm aluminum anode were thermally evaporated under high vacuum defining a device area of 0.155 plus minus 0.008 cm2. The photo voltaic characteristics of the organic photovoltaic device devices were characterized at 25-30 degrees C in air under simulated AM1.5 G conditions and calibrated to a certified silicon reference cell with a KG-5 filters.