NOVELTY - The method comprises pre-cleaning a silicon chip using deionized water, introducing the pre-cleaned silicon chip into alkaline solution to remove damage layer and then washing using deionized water, placing the silicon chip in aqueous solution of hydrofluoric acid for surface etching process and then rinsing by deionized water and drying, pre-cleaning the surface etched silicon chip using deionized water, placing the processed silicon chip into etching solution for etching and then rinsing with deionized water, and cleaning the etched silicon chip to remove organic matter.    USE - The method is useful for cleaning and etching solar battery (claimed).    ADVANTAGE - The method is capable of simply and economically cleaning and etching the solar battery with high purity.    DETAILED DESCRIPTION - The method comprises pre-cleaning a silicon chip using deionized water at a temperature of 50-90 degrees C for 2-12 minutes to obtain pre-cleaned silicon chip, introducing the pre-cleaned silicon chip into alkaline solution to remove damage layer and then washing using deionized water, placing the silicon chip in aqueous solution of hydrofluoric acid (1-10 mass%) for surface etching process at a temperature of 50-90 degrees C for 1-6 minutes and then rinsing by deionized water and drying, pre-cleaning the surface etched silicon chip using deionized water, placing the processed silicon chip into etching solution for etching at 10-30 degrees C for 1-6 minutes and then rinsing with deionized water, cleaning the etched silicon chip to remove organic matter using deionized water, placing the washed silicon wafer in mixed solution of hydrofluoric acid, nitric acid and deionized water for performing surface polishing treatment at a temperature of 5-30 degrees C for 1-15 minutes and then washing with deionized water at 50-90 degrees C for 2-8 minutes, where the hydrofluoric acid content in mixed solution is 1-2 mass%, nitric acid content in mixed solution is 40-60 mass% and deionized water content in mixed solution is 38-59.9 mass%, washing the processed silicon chip to remove metal impurity ion using deionized water at 50-90 degrees C for 1-10 minutes, and placing the processed silicon chip in aqueous solution of hydrofluoric acid for surface etching process a temperature of 50-90 degrees C for 15-40 minutes and then drying to obtain the product. The drying steps are carried out by hot air drying at a temperature of 60-80 degrees C for 15-40 minutes.