NOVELTY - The photovoltaic device comprises a semiconductor substrate (10), patterned antireflective coating layers (14'), an aluminum layer (18), a highly doped p-type semiconductor region, and metal layers. The substrate includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion. The patterned antireflective coating layers are located on a p-type semiconductor surface (13) of the semiconductor substrate, where one portion of the p-type semiconductor surface of the semiconductor substrate is exposed.    USE - Used as a photovoltaic device such as a solar cell.    ADVANTAGE - The photovoltaic device can be economically manufactured with high light absorption efficiency and throughput.    DETAILED DESCRIPTION - The photovoltaic device comprises a semiconductor substrate (10), patterned antireflective coating layers (14'), an aluminum layer (18), a highly doped p-type semiconductor region, and metal layers. The substrate includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion. The patterned antireflective coating layers are located on a p-type semiconductor surface (13) of the semiconductor substrate, where one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. The aluminum layer is located directly on one portion of the p-type semiconductor surface of the semiconductor substrate. The p-type semiconductor portion and/or the n-type semiconductor portion have a textured surface. The portion of the p-type semiconductor surface of the substrate provides a grid pattern on the p-type semiconductor surface of the substrate. The highly doped p-type semiconductor region is positioned between the aluminum layer and one portion of the p-type semiconductor surface of the semiconductor substrate. The metal layers are disposed on the aluminum layer, and fully or partially cover the patterned antireflective coating layers. An INDEPENDENT CLAIM is included for a method for forming a photovoltaic device.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross sectional view of a photovoltaic structure.    Semiconductor substrate (10)    N-type semiconductor surface (12)    P-type semiconductor surface (13)    Patterned antireflective coating layers (14')    Aluminum layer. (18)