NOVELTY - The apparatus has a moving mechanism which moves a crucible (1) and a heater (3) to an up-down direction. A cover (5) covers an upper opening portion of the crucible. An inert gas inlet tube (6) introduces an inert gas to an inert gas introduction hole (5Ba1). An outer crucible (2) is provided in the outer periphery of the crucible. The cover is detachably attached on a surrounding wall (5A) along an upper opening portion edge (1b) of the crucible. The lower end of the cover main portion is located in the upper opening portion edge. The inlet tube is bent and stretched.    USE - Apparatus for manufacturing polycrystal silicon ingot used for polycrystalline-silicon solar cell (claimed).    ADVANTAGE - Since the unidirectional solidification of the melted silicon melt solution is carried out, the high quality of the polycrystal silicon ingot with few silicon carbide foreign materials is manufactured effectively. The manufacturing cost of the polycrystal silicon ingot is reduced. The propagation of polycrystalline-silicon solar cells is accelerated. The heat resistance and the intensity of the outer crucible are enhanced. The amount of charge of the silicon raw material is increased.    DETAILED DESCRIPTION - The tubes are connected, so that inert gas is introduced to the inert gas introduction hole of the cover. The inert gas inlet tube is provided with the flexible tube. The inner surface of the surrounding wall is arranged inside the inner surface of the upper opening portion edge of the crucible which is provided in the tetragon. The pair of board material stands along the sides which opposes the upper opening portion edge of the crucible. The board material is provided with a notch. The surrounding wall engages each notch of the board material. An INDEPENDENT CLAIM is included for manufacturing method of polycrystal silicon ingot, involves injecting silicon raw material to the upper opening portion of the crucible. The silicon raw material is processed to obtain polycrystalline-silicon material.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the polycrystal silicon ingot manufacturing apparatus.    Crucible (1)    Upper opening portion edge (1b)    Outer crucible (2)    Heater (3)    Cover (5)    Surrounding wall (5A)    Inert gas introduction hole (5Ba1)    Inert gas inlet tube (6)