NOVELTY - The method comprises providing (1) a substrate in an evacuable chamber of a layer deposition device, and sputtering metal precursor materials of a sputtering target on the substrate while steering simultaneous selenium-radicals on the substrate so that a selenium-based chalcogenide film is formed on the substrate. The sputtering step comprises sequential sputtering (3, 7, 9) of the precursor materials of a variety of sputtering targets on the substrate. The sequential sputtering comprises a first sputtering operation in which a first sputtering target comprising indium selenide is used.    USE - The method is useful for manufacturing a layer of semiconductor material such as an absorber layer on a substrate such as a solar cell substrate (all claimed).    ADVANTAGE - The method ensures efficient, accurate and reliable manufacture of the layer of semiconductor material on the substrate with high quality and superior restorability.    DETAILED DESCRIPTION - The method comprises providing (1) a substrate in an evacuable chamber of a layer deposition device, and sputtering metal precursor materials of a sputtering target on the substrate while steering simultaneous selenium-radicals on the substrate so that a selenium-based chalcogenide film is formed on the substrate. The sputtering step comprises sequential sputtering (3, 7, 9) of the metal precursor materials of a variety of sputtering targets on the substrate. The sequential sputtering comprises a first sputtering operation in which a first sputtering target comprising indium and/or indium selenide and/or gallium selenide is used, a second sputtering operation in which a second sputtering target comprising copper and/or copper gallium is used, and a third sputtering operation in which a third sputtering target comprising indium and/or indium selenide and/or gallium selenide is used. The selenium-based chalcogenide film forms a portion of an absorber film. The metal precursor materials include copper, indium and gallium. The method further comprises removing selenium from a selenium-vapor source using a plasma to produce a flux of selenium-radicals. An INDEPENDENT CLAIM is included for a hybrid film production device.    DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of a method for manufacturing a layer of semiconductor material on a substrate (Drawing includes non-English language text).    Providing a substrate in an evacuable chamber of a layer deposition device (1)    Sequential sputtering of the metal precursor materials (3, 7, 9)    Further deposition step in which selenium radicals are simultaneously deposited on the substrate (11)    Further processing of the deposited layer. (13)