NOVELTY - A copper-indium-gallium-selenium solar cell component consists of glass, polyimide, a molybdenum back contact layer, a copper-indium-gallium-selenium absorbing layer, a cadmium sulfide buffer layer, a transparent window layer having high-resistance intrinsic zinc oxide thin film, a transparent window layer having low-resistance zinc-aluminum oxide thin film, and an aluminum top electrode. The thickness of glass is 1.5-2 mm and the thickness of polyamide is 25-30 mu m. The thickness of high-resistance film is 80-120 nm.    USE - Copper-indium-gallium-selenium solar cell component (claimed).    ADVANTAGE - A copper-indium-gallium-selenium solar cell component has excellent flexibility and comprises large crystal particles of copper-indium-gallium-selenium thin film crystals. The solar cell component is prepared easily through a rigid substrate in a large scale.    DETAILED DESCRIPTION - A copper-indium-gallium-selenium solar cell component based on a polyimide film-soda glass composite substrate, consists of glass, polyimide, a molybdenum back contact layer, a copper-indium-gallium-selenium absorbing layer, a cadmium sulfide buffer layer, a transparent window layer having high-resistance intrinsic zinc oxide thin film, a transparent window layer having low-resistance zinc-aluminum oxide thin film, and an aluminum top electrode, forming a laminated structure. The thickness of glass is 1.5-2 mm and the thickness of polyamide is 25-30 mu m. The contact layer consists of a high-resistance layer and a barrier layer. The thickness of high-resistance film is 80-120 nm and the thickness of low-resistance film is 600-700 nm. The absorbing layer has a composition of formula: CuIn1-xGaxSe2, where x is 0.25-0.35, the conductivity is p-type, and thickness is 1.5-2 mu m. The buffer layer has a conductivity of n-type and a thickness of 45-50 nm. The window layer has a conductivity of n-type. The zinc oxide film has a thickness of 50-100 nm, the zinc-aluminum oxide film has a thickness of 0.4-0.6 mu m, and the top electrode has a thickness of 0.8-1.5 mu m. An INDEPENDENT CLAIM is included for manufacture of copper-indium-gallium-selenium solar cell component.