NOVELTY - The method comprises: providing a layer of crystallized silicon, where the surface of the layer is inhomogeneous in terms of a size of crystallites and made up of large crystallites (12) and small crystallites (13); forming a layer of a non-nucleating material (21) for the silicon on the surface of the silicon layer, where thickness of the silicon layer is adjusted to cover an entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of the silicon layer on the surface of the assembly.    USE - The method is useful for forming an epitactic silicon layer, made up of crystallites, (claimed) that is useful for making of solar cells.    ADVANTAGE - The method is capable of forming the epitactic silicon layer with good quality in a cost-effective manner.    DETAILED DESCRIPTION - The method comprises: providing a layer of crystallized silicon, where the surface of the layer is inhomogeneous in terms of a size of crystallites and made up of large crystallites (12) with a size of higher than 20 mu m and small crystallites (13) of a smaller size, the large crystallites are distributed on a surface in a noncontinuous manner, an average lateral clearance between two neighbor large crystallites does not exceed 20-100 mu m, and the small crystallites are present in a surface area of 10-60% of the surface; forming a layer of a non-nucleating material (21) for the silicon on the surface of the inhomogeneous silicon layer, where thickness of the silicon layer is adjusted to cover an entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of the silicon layer on the surface of the obtained assembly under conditions that are suitable for forming an expected epitactic layer. The large crystallites are present in a pyramidal form. The step of forming the layer of non-nucleating material comprises: forming the layer of the non-nucleating material for silicon on the surface, where the layer recovers an entirety of outer surface of the small crystallites; and exposing the covered surface to a surface treatment favorable with the elimination of the layer of non-nucleating material on a part of the outer surface of the large crystallites. The step of providing the layer of crystallized silicon comprises: setting a contact of the surface to treat with precursors of the non-nucleating material such as organosilicon polymers; and heat treating the unit formed by the surface in contact with the precursors by condensation-reticulation, where the setting and heat treating steps are consecutive or simultaneous. The setting step is carried out by steeping, turning, or brushing a liquid solution including the precursors. The heat treating step includes heating at a temperature of 300-700 degrees C under atmosphere of nitrogen or air. The method further comprises heat treating for one hour and at a temperature of 1000 degrees C under an oxidizing atmosphere. The surface treatment is carried out by chemical attack using a hydrofluoric acid solution if the non-nucleating material is made of silicon oxide. The step of forming the layer of a non-nucleating material is operated by directional plasma attack by argon plasma. The epitaxial growth is carried out by a liquid phase epitaxy including a liquid bath containing silicon and a solvent such as tin, and by a gas phase epitaxy implementing a trichorosilane based precursor. The epitactic layer has a crystallite size greater than or equal to 100 mu m.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of structures obtained at various stages of a method for forming an epitactic silicon layer made up of crystallites.    Large crystallites (12)    Small crystallites (13)    Non-nucleating material. (21)