NOVELTY - The apparatus has a plasma deposition unit (202) generating plasma (214). A movement system (204) moves a substrate (234) under the plasma deposition unit. A mesh system is located between the plasma deposition unit and the substrate in which a mesh (248) comprises a number of materials for deposition on the substrate and in which the plasma passing through the mesh causes a portion of the number of materials from the mesh to be deposited on the substrate. A controller (208) controls operation of the plasma deposition unit and the movement system.    USE - Plasma deposition apparatus for depositing number of materials e.g. aluminum, aluminum oxide, zinc oxide, aluminum copper, aluminum doped zinc oxide, gallium doped zinc oxide, paint, highly-oriented pyrolytic graphite, conductive polymers and non-conductive polymers, on a surface of a substrate i.e. semiconductor wafer during manufacturing of organic LED display, integrated circuit, processor, display device, sensor, solar cell, aircraft/automobile window or windscreen, medical device, biomedical implant and engineered tissue (all claimed).    ADVANTAGE - The mesh system is located between the plasma deposition unit and the substrate in which the mesh comprises a number of materials for deposition on the substrate and in which the plasma passing through the mesh causes the portion of the number of materials from the mesh to be deposited on the substrate, so that bulky and costly vacuum pumps and other equipment for providing vacuum environment are avoided.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a method for depositing materials    (2) an atmospheric plasma deposition system    (3) a method for plasma deposition of materials on a substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic perspective view of a plasma deposition system.    Plasma deposition unit (202)    Movement system (204)    Controller (208)    Generating plasma (214)    Substrate (234)    Mesh (248)