TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: In the crystal, each of the single crystal domains: comprises aluminum indium gallium nitride of formula (AlxInyGa1-x-yN); comprises gallium nitride; has a dislocation density of less than 103 per cm2; is separated by a line of dislocations with a linear density of less than 1x 105 per cm; has a nonpolar or semipolar surface crystallographic orientation; has an impurity concentration of hydrogen greater than 1017 per cm2, and an impurity concentration of at least one of lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, fluorine or chlorine greater than 1015 per cm; has an impurity concentration of at least one of beryllium, magnesium, calcium, strontium, barium, scandium, yttrium, a rare earth element, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum or tungsten greater than 1014 per cm; has a crystallographic orientation within 5 degrees of a (0 0 0 1) gallium-polar plane, a (0 0 0 -1) nitrogen-polar plane, and a (1 0 -1 0) non-polar plane; and has a crystallographic orientation within 5 degrees of an orientation comprising a (1 1 -2 plus minus 2) plane, a (6 0 -6 plus minus 1) plane, a (5 0 -5 plus minus 1) plane, a (4 0 -4 plus minus 1) plane, a (3 0 -3 plus minus 1) plane, a (5 0 -5 plus minus 2) plane, a (7 0 -7 plus minus 3) plane, a (2 0 -2 plus minus 1) plane, a (3 0 -3 plus minus 2) plane, a (4 0 -4 plus minus 3), a (5 0 -5 plus minus 4) plane, a (1 0 -1 plus minus 1) plane, a (1 0 -1 plus minus 2) plane, a (1 0 -1 plus minus 3) plane, a (2 1 -3 plus minus 1) plane or a (3 0 -3 plus minus 4) plane.x = greater than or equal to 0; andy = less than or equal to 1.The polar misorientation angle gamma between the first domain and the second domain is less than 0.05 degrees . The misorientation angles alpha and beta are less than 0.2 degrees . In the crystal, at least one of the single crystal domains has a stacking-fault concentration of less than or equal to 103 per cm. The crystal further comprises a semiconductor structure overlying at least one of the single crystal domains, where an active layer of the semiconductor structure lies within a single domain of the crystal. The semiconductor structure forms a portion of a device comprising an LED, a laser diode, a photodetector, an avalanche photodiode, a transistor, a rectifier, a thyristor, Schottky rectifier, a p-i-n diode, a metal-semiconductor-metal diode, a high-electron mobility transistor, a metal semiconductor FET, a metal oxide FET, a power metal oxide semiconductor FET, a power metal insulator semiconductor FET, a bipolar junction transistor, a metal insulator FET, a heterojunction bipolar transistor, a power insulated gate bipolar transistor, a power vertical junction FET, a cascode switch, an inner sub-band emitter, a quantum well infrared photodetector and/or a quantum dot infrared photodetector. EXAMPLE - No suitable example given.