NOVELTY - A back contacted back junction solar cell module is manufactured by forming semi-finished solar cells, each on a respective donor wafer having greater than or equal to 1 porous release layer, forming semi-finished solar cells on donor wafer having greater than or equal to 1 porous layer, separating each semi-finished solar cell from donor wafer by attaching a temporal chuck to the upper major surface of the semi-finished solar cell and cleaving greater than or equal to 1 release layer, and optionally removing remains of greater than or equal to 1 release layer on separated semi-finished solar cells by chemical etching.    USE - Manufacture of back contacted back junction solar cell module (claimed).    ADVANTAGE - Highly efficient back contacted back junction solar cell module can be manufactured at low cost.    DETAILED DESCRIPTION - A back contacted back junction solar cell module is manufactured by forming semi-finished solar cells, each on a respective donor wafer having greater than or equal to 1 porous release layer, forming semi-finished solar cells on donor wafer having greater than or equal to 1 porous layer, separating each semi-finished solar cell from donor wafer by attaching a temporal chuck to the upper major surface of the semi-finished solar cell and cleaving greater than or equal to 1 release layer, and optionally removing remains of greater than or equal to 1 release layer on separated semi-finished solar cells by chemical etching. Formation of semi-finished solar cell involves employing monocrystalline silicon donor wafer having planar deposition surface into which greater than or equal to 1 porous release layer is formed, placing donor wafer in chemical vapor deposition chamber and epitaxially depositing 3-layered structure of doped monocrystalline silicon layers (epi-layers) onto porous release layer of deposition surface, such that the 1st epi-layer has thickness of 0.2-5 mu m and is doped with 1x 1016-1x 1020 cm-3 N-type or P-type doping element, the 2nd epi-layer is deposited directly onto the 1st epi-layer, has thickness of 10-65 mu m, and is doped with 1x 1015-1x 1017 cm-3 doping element giving the opposite conductivity of the 1st epi-layer, and the 3rd epi-layer is deposited directly onto the 2nd epi-layer, has thickness of 0.2-5 mu m, and is doped with 1x 1016-1x 1020 cm-3 N-type or P-type doping element, surface texturing the upper major surface of the last deposited epi-layer, and depositing greater than or equal to 1 surface passivation layer (14) and optionally greater than or equal to 1 anti-reflective coating layer (8) on textured surface. An INDEPENDENT CLAIM is included for back contacted back junction solar cell module.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the back contacted back junction solar cell module.    Emitter layer (3)    Base layer (4)    Front layer (5)    Anti- reflective coating layer (8)    Surface passivation layer (14)