NOVELTY - The method comprises: placing a substrate in a vacuum deposition system; establishing a pressure of less than atmosphere within the vacuum deposition system; establishing a temperature of 175-225 degrees C within the vacuum deposition system; establishing a flow of a zinc-containing film-forming gas and water vapor into the vacuum deposition system; establishing a flow ratio between the water vapor and the zinc-containing film-forming gas to be 0.8-1.1; and establishing a flow of a dopant gas into the vacuum deposition system with the zinc-containing film-forming gas and the water vapor.    USE - The method is useful for forming an electrode that is useful in a photovoltaic cell, an LED, an organic LED, a flat panel display and a thin film solar module (all claimed).    ADVANTAGE - The method is capable of forming the electrode with improved stability against degradation thus preventing performance loss of the devices.    DETAILED DESCRIPTION - The method comprises: placing a substrate in a vacuum deposition system; establishing a pressure of less than atmosphere within the vacuum deposition system; establishing a temperature of 175-225 degrees C within the vacuum deposition system; establishing a flow of a zinc-containing film-forming gas and water vapor into the vacuum deposition system; establishing a flow ratio between the water vapor and the zinc-containing film-forming gas to be 0.8-1.1; and establishing a flow of a dopant gas, hydrogen and diborane into the vacuum deposition system with the zinc-containing film-forming gas and the water vapor. The flow of the hydrogen comprises 100 standard cubic centimeters per minute (sccm) and the flow of diborane comprises 40 sccm. The pressure is 0.4-1.1 mbar. The flow ratio comprises a unit of volume of diethyl zinc and a unit of volume of water. The method further comprises: forming a transparent layer on the substrate in the vacuum deposition system; forming a first layer of transparent conductive oxide on the transparent layer by introducing water and diethyl zinc into the vacuum deposition system at a flow ratio of 0.8-1.1 and introducing a dopant gas at a first flow rate; forming a second layer of transparent conductive oxide on a substrate by introducing diethyl zinc and water into the vacuum deposition system at a flow ratio of 0.8-1.1 and introducing the dopant gas at a second flow rate; forming an absorber layer on the first layer of transparent conductive oxide before forming the second layer of transparent conductive oxide on the absorber layer; and forming an enclosure layer on the second layer of transparent conductive oxide. The absorber layer comprises a photoactive layer that generates electricity from absorbed photons. The first flow rate of dopant gas is similar to the second flow rate of the dopant gas. The step of forming the first layer of the transparent conductive oxide is performed in the vacuum deposition system at temperature of 150-225 degrees C. The first layer of conductive oxide and the second layer of conductive oxide form an electrode. An INDEPENDENT CLAIM is included for a thin film solar module.