NOVELTY - Crystal comprises at least two single crystal domains having a nitride composition comprising: a first domain having a first thickness, and first and second lateral dimensions, where the first and second lateral dimensions define a plane that is perpendicular to the first thickness, and each of the first lateral dimension and the second lateral dimension is greater than 2 mm; and a second domain having a second thickness, a third lateral dimension and a fourth lateral dimension, where the third and fourth lateral dimensions define a plane that is perpendicular to the second thickness.    USE - The crystal is useful for making optoelectronic devices, lasers, LEDs, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits and transistor.    ADVANTAGE - The crystal: exhibits high quality; and can be fabricated in a method i.e. capable of producing highly accurate crystallographic registry between the elementary seed crystals and the observed defects resulting from the merging of the elementary seed crystals.    DETAILED DESCRIPTION - Crystal comprises at least two single crystal domains having a nitride composition comprising: a first domain having a first thickness, a first lateral dimension, and a second lateral dimension, where the first lateral dimension and the second lateral dimension define a plane that is perpendicular to the first thickness, and each of the first lateral dimension and the second lateral dimension is greater than 2 mm; and a second domain having a second thickness, a third lateral dimension and a fourth lateral dimension, where the third and fourth lateral dimensions define a plane that is perpendicular to the second thickness, each of the third lateral dimension and the fourth lateral dimension is greater than 2 mm, each of the single crystal domains has a dislocation density of less than 107 per cm2 and is separated by a line of dislocations with a linear density of 50 to 5x 105 per cm, a polar misorientation angle gamma between the first domain and the second domain is greater than 0.005 degrees and less than 0.5 degrees , and misorientation angles alpha and beta are greater than 0.01 degrees and less than 1 degrees . An INDEPENDENT CLAIM is also included for fabricating (1100) a crystal, comprising: providing (1110) the crystals; providing (1120) a handled substrate; bonding (1130) the crystals to the handle substrate; and growing (1140) the crystals to cause a coalescence into a merged crystal, where the merged crystal comprises the first domain and the second domain.    DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of the method for making the crystal.    Fabricating a crystal (1100)    Providing at least two crystals (1110)    Providing a handled substrate (1120)    Bonding the crystals (1130)    Growing the crystals (1140)