NOVELTY - A device (100) including at least one light-emitting diode comprises: first base region (102) comprising an n-type III-V semiconductor material; second base region (104) comprising p-type III-V semiconductor material; and multi-quantum well structure (106) disposed between first and second base regions, where the structure comprises at least three quantum well regions and at least two barrier regions, where first barrier region is disposed between first and second quantum well regions, and second barrier region is disposed between second quantum well region and third quantum well region.    USE - As device including light-emitting diode (LED) (claimed), semiconductor laser, photodetector, and solar cell used to convert electrical energy into electromagnetic radiation, or to convert electromagnetic radiation into electrical energy.    ADVANTAGE - The device provides an improved distribution of electron holes across the multi-quantum well structure during operation of the photoactive device.    DETAILED DESCRIPTION - A device (100) including at least one light-emitting diode (LED), comprises: a first base region (102) comprising an n-type III-V semiconductor material; a second base region (104) comprising a p-type III-V semiconductor material; and a multi-quantum well structure (106) disposed between the first base region and the second base region, where the multi-quantum well structure comprises at least three quantum well regions and at least two barrier regions, a first barrier region of at least two barrier regions disposed between a first quantum well region and a second quantum well region of at least three quantum well regions, a second barrier region of the barrier regions disposed between the second quantum well region and a third quantum well region of the quantum well regions, where the first quantum well region is located closer to the first base region than the third quantum well region, and the third quantum well region is located closer to the second base region than the first quantum well region; where each of the first quantum well region, the second quantum well region, and the third quantum well region comprises InxGa1-xN and has a well region thickness in a direction extending between the first base region and the second base region of at least 2 nm, and each of the first barrier region and the second barrier region comprises InyGa1-yN, where y is 0.05, and has a barrier region thickness in the direction extending between the first base region and the second base region greater than each of the well region thicknesses and at least 2 nm; and where an electron hole energy barrier between the third quantum well region and the second quantum well region is less than an electron hole energy barrier between the second quantum well region and the first quantum well region. An INDEPENDENT CLAIM is included for forming a radiation-emitting device, involving: forming several openings extending through a layer of strained semiconductor material over a strain relaxation layer; thermally treating the strained semiconductor material and the strain relaxation layer and causing deformation of the strain relaxation layer and relaxation of the strained semiconductor material to form at least one volume of relaxed semiconductor material; sequentially epitaxially depositing several III-V semiconductor material volumes over at least one volume of relaxed semiconductor material to form a multi-quantum well structure comprising a first barrier region disposed between a first quantum well region and a second quantum well region, and a second barrier region disposed between the second quantum well region and a third quantum well region; forming each of the first quantum well region, the second quantum well region, and the third quantum well region to have a well region thickness of at least 2 nm; forming each of the first barrier region and the second barrier region to have a barrier region thickness greater than or equal to each of the well region thicknesses; and selecting a composition of each of the first quantum well region, the second quantum well region, and the third quantum well region such that an electron hole energy barrier between the third quantum well region and the second quantum well region is less than an electron hole energy barrier between the second quantum well region and the first quantum well region.    DESCRIPTION OF DRAWING(S) - The figure shows a simplified cross-sectional view of a radiation-emitting semiconductor device.    Device (100)    First base region (102)    Second base region (104)    Multi-quantum well structure (106)    First quantum well region (108)    Second quantum well region (110)    Third quantum well region (112)    Fourth quantum well region (114)    Well region thickness (115)