NOVELTY - Manufacture of semiconductor laminate comprising metal oxide layers (70) and (L2) and dielectric layer involves forming metal oxide layer (70) containing metal oxide(s) (M1) chosen from indium oxide, gallium oxide, zinc oxide and tin oxide using a liquid phase (P1), and forming metal oxide layer (L2) containing metal oxide (M2) chosen from gallium oxide, zinc oxide, tin oxide, hafnium oxide, silicon oxide, aluminum oxide, titanium oxide, alkali metal oxide and alkaline-earth metal oxides using liquid phase (P2).    USE - Manufacture of semiconductor laminate used for semiconductor laminate for electronic component e.g. transistor, thin film transistor, diode, solar cell, sensor, radio-frequency identification tag or thin-film transistor back panel for display device (all claimed).    ADVANTAGE - The semiconductor laminate having favorable electrical stability is economically manufactured.    DETAILED DESCRIPTION - Manufacture of semiconductor laminate comprising metal oxide layers (70) and (L2), and dielectric layer involves forming metal oxide layer (70) containing metal oxide(s) (M1) chosen from indium oxide, gallium oxide, zinc oxide and tin oxide using a liquid phase (P1), and forming metal oxide layer (L2) containing metal oxide (M2) chosen from gallium oxide, zinc oxide, tin oxide, hafnium oxide, silicon oxide, aluminum oxide, titanium oxide, alkali metal oxide and alkaline-earth metal oxides using liquid phase (P2). The metal oxide layer (70) is arranged between metal oxide layer (L2) and the dielectric layer. The metal oxide layer (70) has layer thickness of 20 nm or less. The liquid phase (P1) contains metal oxide(s) (M1) or metal oxide precursor(s) (MP1). The metal oxide (M1) is chosen from indium oxide, gallium oxide, zinc oxide and tin oxide. The liquid phase (P2) contains metal oxide(s) (M2) or metal oxide precursor(s) (MP2). The metal oxide (M2) is chosen from gallium oxide, zinc oxide, tin oxide, hafnium oxide, silicon oxide, aluminum oxide, titanium oxide, alkali metal oxide and alkaline-earth metal oxide. The metal oxides (M1) and (M2) are different.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of the semiconductor element containing the semiconductor laminate.    Semiconductor element (10)    Substrate (20)    Gate electrode (30)    Dielectric layer (40)    Metal oxide layer (70)