TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The method utilizes indium tin oxide, fluorine tin oxide, aluminum tin oxide or antimony tin oxide. In the method, a thin layer of etching paste is applied on to the transparent conductive oxide layer by spin coating. The etching paste is applied in a pattern on to the transparent conductive oxide layer by screen printing, silk-screen printing, pad printing, stamp printing or ink-jet printing. The applied etching composition is activated by irradiating the entire surface layer, by what only the surface areas covered by etching composition are etched. In the method, at first a photo mask is positioned over the transparent conductive oxide layer, which is covered with etching paste and that only those areas are activated by irradiation, which are irradiated through the pattern of the photo mask. The UV irradiation lasts for 20 seconds to 2 minutes.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The etching composition comprises: 25-50 wt.% (preferably 0.01-5 wt.%) of an etching component; phosphoric acid as etching component; and 25-60 wt.% of organic solvent and 10-35 wt.% of water, provided that the amount of solvent and water does not exceed 75 wt.%. The etching composition comprises a photoacid generator comprising: diphenyliodonium triflate, trisulfoniumnonasulfate, nitro benzyl esters, preferably 4-nitrobenzyl-9-10-dimethoxyanthracene-2-sulfonate, sulfones, preferably phenylacylphenylsulfone, phosphates, preferably triarylphosphates, N-hydroxyimide sulfonates, N-hydroxyphthalimide methane sulfonate, or diazonaphthoquinones, preferably 1-oxo-2-diazonaphthochinone-5-arylsulfonate; or triphenylsulfonium trifluoromethanesulfonate, diphenyl-4-methylphenylsulfonium trifluoromethanesulfonate, diphenyl-2,4,6-trimethylphenylsulfonium p-toluenesulfonate, diphenyl(4-(phenylthio)phenyl)sulfonium hexafluorophosphate, diphenyl(4-(phenylthio)phenyl)sulfonium hexafluoroantimonate, diphenyl(4-phenylthiophenyl)sulfonium triflate, (4,8-dihydroxy-1-naphthyl)dimethylsulfonium triflate or norbornane-on(3) sulfonic acid ester. Preferred Components: The photo acid generating substances further comprises bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate, bis(4-tertbutylphenyl)iodonium p-toluenesulfonate, bis(4-tert-butylphenyl)iodonium triflate, butoxycarbonyl-methoxyphenyldiphenylsulfonium triflate, (4-bromophenyl)diphenylsulfonium triflate, (tert- Butoxycarbonyl-methoxynaphthyl)-diphenylsulfonium triflate, (4-tert-butylphenyl)diphenylsulfonium triflate, diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate, diphenyliodonium hexafluorophosphate, diphenyliodonium nitrate, diphenyliodonium perfluoro-1-butanesulfonate, diphenyliodonium p-toluenesulfonate, (4-fluorophenyl)diphenylsulfonium triflate, N-hydroxynaphthalimide triflate, N-hydroxy-5-norbornene-2,3-dicarboximide perfluoro-1-butanesulfonate, (4-lodophenyl)diphenylsulfonium triflate, (4-mthoxyphenyl)diphenylsulfonium triflate, 2-(4-methoxystyryl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (4-methylphenyl)diphenylsulfonium triflate, (4-methylthiophenyl)methyl phenyl sulfonium triflate, (4-phenoxyphenyl)diphenylsulfonium triflate, (4-phenylthiophenyl)diphenylsulfonium triflate, triarylsulfonium hexafluorophosphate salts, triphenylsulfonium perfluoro-1-butanesufonate, triphenylsulfonium triflate, tris(4-tertbutylphenyl) sulfonium perfluoro-1-butanesulfonate, tris(4-tertbutylphenyl) sulfonium triflate, bis(cyclohexylsulfonyl)diazomethane, bis(t-butylsulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, triphenylsulfonium trifluoromethanesulfonate, diphenyl-4-methylphenylsulfonium trifluoromethanesulfonate, diphenyl-2,4,6-trimethylphenylsulfonium p-toluenesulfonate, diphenyl(4-(phenylthio)phenyl)sulfonium hexafluorophosphate, diphenyl(4-(phenylthio)phenyl)sulfonium hexafluoroantimonate, diphenyl(4-phenylthiophenyl)sulfonium triflate, (4,8-dihydroxy-1-naphthyl)dimethylsulfonium triflate, (4,7-dihydroxy-1-naphthyl)dimethylsulfonium triflate or norbornane-on(3) sulfonic acid ester.