NOVELTY - Dried germanium is placed in the crucible of a single-crystal furnace and dopant is added. The system is vacuumized, leakage is detected, and argon is supplied. The material in the crucible is heated, mixing and melted, controlling the rotating speed of curable at 3-10 rpm. The rotating speed is reduced to 0.2-0.8 rpm and then increased to 0.5-2 rpm after 20-60 minutes. The process is repeated thrice. The furnace temperature is reduced to 939-948 degrees C and the germanium melt is contacted with a seed crystal rotated at 5-20 rpm for crystal growth.    USE - Growth method of doped germanium single crystal for solar cells.    ADVANTAGE - The method enables simple growth of doped germanium single crystal, with uniform distribution of dopant. The change in axial resistivity of single crystal is low. The germanium single crystal resistivity is 0.001-0.003 Omega .cm.    DETAILED DESCRIPTION - High-purity germanium is placed in a hot water tank cleaning machine and temperature is increased to 40-65 degrees C. Germanium is sequentially passed to hot acid-pickling groove and ultrasound overflow tank, and cleaned till there is no acid residue. Germanium is taken out, placed in a stainless steel tray, dried in an oven by heating at 100-120 degrees C for 2-3 hours, cooled, and removed. Dried germanium is placed in the crucible of a single-crystal furnace and dopant is added. The system is vacuumized, leakage is detected, and argon is supplied at 5-60 sltm/minute. The material in the crucible is heated, mixing and melted, controlling the rotating speed of curable at 3-10 rpm. The rotating speed is reduced to 0.2-0.8 rpm and then increased to 0.5-2 rpm after 20-60 minutes. The process is repeated thrice for mixing of germanium and dopant. The furnace temperature is reduced to 939-948 degrees C and the germanium melt is contacted with a seed crystal rotated at 5-20 rpm for crystal growth, with crucible rotating in the opposite direction. The crucible speed is controlled at 3-10 rpm, reduced to 0.2-0.8 rpm, and improved to 0.5-2 rpm after 20-60 minutes. The process is repeated thrice for uniform mixing.