NOVELTY - Manufacturing solar cell copper-indium-gallium-selenium (CIGS) absorber layer target comprises e.g. placing copper, indium, and gallium in a container upper layer heating area in an independent space, and selenium in the container lower layer heating area, sealing, filling argon gas, nitrogen or helium gas, adjusting temperature of upper layer heating area and lower layer heating area, thermal insulating, cooling to room temperature, removing prepared block out, ball milling, sieving the powder to obtain powder product, and placing powder in hot-pressing furnace, and pressing.    USE - The method is useful for manufacturing solar cell copper-indium-gallium-selenium (CIGS) absorber layer target (claimed).    ADVANTAGE - The method uses different heating methods according to different melting point and boiling point materials, so that selenium in gaseous form and copper, indium and gallium in liquid form are mixed fully, which not only increases the uniform distribution of selenium in the alloy, but also increases the density of target material, and reduces the reaction time and improves the production efficiency; and uses material with different melting and boiling points with different temperature zone heating and the material with low melting point so as to avoid using high temperature melting material, thus saving the cost.    DETAILED DESCRIPTION - Manufacturing solar cell copper-indium-gallium-selenium (CIGS) absorber layer target, comprises (i) placing block-shaped copper, indium, and gallium respectively according to the ratio in a container upper layer heating area in an independent space, and selenium in the container lower layer heating area, sealing container under vacuum degree of less than 10-2 Pa or filling argon gas, nitrogen or helium gas lower than the atmospheric pressure according to the ratio, (ii) adjusting the temperature of upper layer heating area of each independent space to a temperature higher than the melting point of corresponding material, melting and flowing to the lower layer heating area, adjusting the temperature of lower layer heating area to a temperature higher than the boiling point of selenium, moving selenium with the material in downward to form a stream, until the upper heating region of all flows into the lower layer heating area, finally, stopping heating of upper layer heating area, adjusting temperature of lower layer heating area higher than the melting point of copper, thermal insulating for 1-10 hours, then slowly cooling to room temperature within 8 hours, and removing the prepared block out from the container, ball milling, sieving the powder to obtain the powder product, and (iii) placing the prepared powder into the hot-pressing furnace at 600-920 degrees C, pressing to the needed size at 30-300 MPa to obtain the needed processing block.