NOVELTY - A transparent conductive electrode layer (20) is provided on a transparent substrate (10). P-doped semiconductor layer(s) (30) are deposited on the layer (20). A wide optical band gap interface film (40) comprising intrinsic hydrogenated amorphous silicon film is deposited on the layer (30). The interface film (40) is treated with hydrogen plasma. An intrinsic semiconductor layer comprising silicon is deposited on film (40). N-doped semiconductor layer(s) (60) are deposited on the intrinsic semiconductor layer. An electrode (80) is formed on layer (60), to obtain solar cell.    USE - Formation of solar cells e.g. silicon-based solar cell (claimed), tandem cells and multi junction solar cells.    ADVANTAGE - The solar device formed has high resistance, stability with respect to the light induced degradation, and has excellent performance.    DETAILED DESCRIPTION - A transparent conductive electrode layer is provided on a transparent substrate. P-doped semiconductor layer(s) are deposited on the transparent conductive electrode layer. The p-doped layer(s) having sub layer(s) comprises p-doped amorphous silicon, p-doped amorphous silicon-carbon, p-doped amorphous silicon-oxygen, p-doped microcrystalline silicon, p-doped microcrystalline hydrogenated silicon, p-doped microcrystalline silicon-carbon and/or p-doped microcrystalline silicon-oxygen. A wide optical band gap interface film comprising intrinsic hydrogenated amorphous silicon film is deposited on the p-doped semiconductor layer. The wide optical band gap interface film is treated with hydrogen plasma. An intrinsic semiconductor layer comprising silicon is deposited on the wide optical band gap interface film. N-doped semiconductor layer(s) are deposited on the intrinsic semiconductor layer. The n-doped semiconductor layers having sub layer(s) comprises n-doped amorphous silicon, n-doped amorphous silicon-carbon, n-doped amorphous silicon-oxygen, n-doped microcrystalline silicon, n-doped microcrystalline hydrogenated silicon, n-doped microcrystalline silicon-carbon and/or n-doped microcrystalline silicon-oxygen. An electrode is formed on the n-doped semiconductor layer, to obtain a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of an amorphous silicon-based solar cell.    Transparent substrate (10)    Transparent conductive electrode layer (20)    P-doped semiconductor layer (30)    Wide optical band gap interface film (40)    Amorphous semiconductor layer (50)    N-doped semiconductor layer (60)    Electrode (80)