NOVELTY - Continuous Czochralski (CZ) crystal growing where at least one crystal ingot (204) is pulled into growth chamber from crystal/melt interface defined in crucible, comprises: separating molten crystalline material into inner growth region (210) surrounding crystal/melt interface and outer region for receiving crystalline feedstock; controlling flow of molten crystalline material by increasing path distance and time for crystalline feed-stock to travel between outer region and inner growth region; and defining annular space with respect to sidewalls of heat shield.    USE - The method is useful for continuous Czochralski (CZ) crystal growing.    ADVANTAGE - The method: utilizes devitrification promoter for the weirs that improves zero dislocation performance in the crystal and make the weirs substantially impervious to slumping or loss of mechanical support due to high temperatures associated with molten silicon; is cost-effective; utilizes devitrification promoter with a tall weir that not only improves zero dislocation performance, but also provides the additional benefit avoidance of slumping which would dangerously impede the rotation of the crucible and otherwise interfere with safe operation of the crystal grower; and prevents dust particles from causing dislocation defects in the growing ingot, and enables direct utilization of recycled sources of silicon as feedstock for producing high purity silicon wafers for solar cells from recycling tops, tails, slabs and pot scrap bi-product materials.    DETAILED DESCRIPTION - Continuous Czochralski (CZ) crystal growing where at least one crystal ingot (204) is pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock, comprises: separating the molten crystalline material into an inner growth region (210) surrounding the crystal/melt interface and an outer region for receiving the crystalline feedstock; controlling the flow of the molten crystalline material by increasing path distance and time for crystalline feed-stock to travel between the outer region and the inner growth region; and defining an annular space with respect to sidewalls of a heat shield (216) in the growth chamber so that the annular space substantially restricts entry of dust into the growth region.    DESCRIPTION OF DRAWING(S) - The figure illustrates schematic diagram showing a side sectional view of an extended weir providing an optimal annular gap between the top of the weir and the underside of the heat shield.    Ingot (204)    Annular opening (205)    Growth region (210)    Passageway (214)    Heat shield (216)