NOVELTY - The method comprises preparing melting crucibles (1), covering a bottom of the crucible with thin monocrystalline silicon seed crystal plates (2a-2d) of a material having a predetermined orientation its crystal axes to form seed crystal plate layer, solidifying melt in the crucible under the action of a directed prevailing temperature gradient in a vertical direction to a material block. A predetermined acute angle of greater than 10 degrees is inclined relative to a vertical direction of the crystal axes of the seed crystal plate.    USE - The method is useful for producing a block of material such as monocrystalline silicon ingots by direct solidification of a melt for producing a silicon wafer that is useful in a solar cell (all claimed).    ADVANTAGE - The method is capable of economically preparing the silicon ingots with less dislocation density thus enhancing conversion efficiency of the solar cell.    DETAILED DESCRIPTION - The method comprises preparing melting crucibles (1), covering a bottom of the crucible with thin monocrystalline silicon seed crystal plates (2a-2d) of a material having a predetermined orientation its crystal axes to form seed crystal plate layer, solidifying melt in the crucible under the action of a directed prevailing temperature gradient in a vertical direction to a material block. A predetermined acute angle of greater than 10 degrees is inclined relative to a vertical direction of the crystal axes of the seed crystal plate. The seed crystal plates are directly oriented adjacent to one another. The seed crystal plates and their edges are modified such that the edges are directly positioned with minimum displacements and tilts and to completely cover a bottom of the melting crucible. The acute angle of two adjacent seed crystal plates with respect to a vertical direction differs by a minimum angle of 7.5-25 degrees , and is opposite in sign. The acute angle of the seed crystal plates along a direction, which is perpendicular to the vertical direction, is rotated to the same orientation in rotation steps about the vertical direction. The crystal plates are oriented plates with a square cross-section, and are separated from a single crystalline material cylinder with a predetermined orientation of the crystal axes. The (001) crystal axis is tilted relative to a perpendicular to the top and bottom by the predetermined acute angle. INDEPENDENT CLAIMS are included for:    (1) a silicon wafer; and    (2) a silicon solar cell.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic perspective view of a bottom of a crucible.    Melting crucibles (1)    Silicon seed crystal plates. (2a-2d)