NOVELTY - Zinc oxide thin film is deposited on glass substrate. Zinc oxide nanowire array film is placed perpendicular to conductive glass substrate. Nanowire array is immersed in mercaptopropionic acid solution, and surface-modification is carried out. The array is immersed in quantum dot solution to obtain nanowire surface assembly (A). The structure is immersed in octadecyltrichlorosilane solution, removed and dried to obtain nanowire surface assembly (B). The structure is placed in furnace pre-filled with nitrogen gas, to obtain one-dimensional quantum dots.    USE - Method for sectional-assembling different quantum dots along one-dimensional nanowire used in photoelectric detection and photovoltaic application.    ADVANTAGE - The method economically provides sectional-assembling different quantum dots having excellent electron transfer capacity and light absorption capacity.    DETAILED DESCRIPTION - Zinc oxide thin film having thickness of 20-50 nm is deposited on conductive glass substrate or silicon substrate using atomic layer deposition method and annealed at 450 degrees C for 0.5-1 hour. Zinc oxide nanowire array film is placed perpendicular to silicon or conductive glass substrate on which a zinc oxide seed layer is pre-deposited by hydrothermal method. Nanowire array is immersed in mercaptopropionic acid solution, surface-modification is carried out for 2 hours, array is removed, dried with nitrogen and allowed to stand for 2 hours. The array is immersed in oil phase quantum dot solution for 12-24 hours, to obtain nanowire surface assembly (A) of quantum dot. The structure is immersed in octadecyltrichlorosilane solution for 2 hours, removed and naturally dried in nitrogen atmosphere for 2 hours in ultraviolet exposure for 1 minute. The nano-structure is immersed in aqueous solution of quantum dot for 12-24 hours, to obtain nanowire surface assembly (B) of quantum dot. The structure is filled in annealing furnace pre-filled with nitrogen gas for 30 minutes and heated at 300 degrees C for 5 minutes, to obtain one-dimensional quantum dots.