TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Components: The ink contains indium selenide of formula (In(SeR1)3) and/or gallium selenide of formula (Ga(SeR1)3), preferably indium tri(selenium n-butyl) or gallium tri(selenium n-butyl).R1 = alkyl    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The steps of depositing first layer of ink and depositing second layer are interchanged so that the second layer is deposited on the substrate before the ink. The steps of depositing first layer of ink, heating first layer, depositing second layer and heating the layers are repeated at least one time in any order. The heating step is a process comprising converting the layer at 100-450 degrees C or annealing the layers at 450-650 degrees C or annealing the layers at 450-650 degrees C in the presence of selenium vapor. The process (I) further comprises adding sodium ions (0.01-2 atom percent) to any of the layers. The depositing is done by spraying, spray coating, spray deposition, spray pyrolysis, printing, screen printing, inkjet printing, aerosol jet printing, ink printing, jet printing, stamp printing, transfer printing, pad printing, flexographic printing, gravure printing, contact printing, reverse printing, thermal printing, lithography, electrophotographic printing, electrodepositing, electroplating, electroless plating, bath deposition, coating, wet coating, dip coating, spin coating, knife coating, roller coating, rod coating, slot die coating, Meyer bar coating, lip direct coating, capillary coating, liquid deposition, solution deposition, layer-by-layer deposition, spin casting and/or solution casting. The process (II) further comprises adding sodium ions (0.01-2 atom percent) to any of the layers or adding metal compound of formula (M1alkM1B(ER2)4) or M1alk(ER2).M1alk = Li, Na or K; andR2 = alkyl or aryl.Preferred Components: The copper chalcogenide is copper selenide or copper telluride. The substrate is a semiconductor, doped semiconductor, silicon, gallium arsenide, insulators, glass, molybdenum glass, silicon dioxide, titanium dioxide, zinc oxide, silicon nitride, metal, metal foil, molybdenum, aluminum, beryllium, cadmium, cerium, chromium, cobalt, copper, gallium, gold, lead, manganese, molybdenum, nickel, palladium, platinum, rhenium, rhodium, silver, stainless steel, steel, iron, strontium, tin, titanium, tungsten, zinc, zirconium, metal alloy, metal silicide, metal carbide, polymer, plastic, conductive polymer, copolymer, polymer blend, polyethylene terephthalate, polycarbonate, polyester, polyester film, mylar, polyvinyl fluoride, polyvinylidene fluoride, polyethylene, polyetherimide, polyethersulfone, polyether ketone, polyimide, PVC, acrylonitrile butadiene styrene polymer, silicone, epoxy, paper and/or coated paper. The photovoltaic layer is deficient in the quantity of group 13 atoms relative to group 11 atoms. The group 13 chalcogenide is indium sulfide, indium selenide, indium telluride, gallium sulfide, gallium selenide or gallium telluride.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymeric precursor compound is at least one CIGS, copper indium sulfur/selenium (CIS), copper gallium sulfur/selenium (CGS), (copper, silver)(indium, gallium aluminum)(sulfur, selenium) (CAIGAS), (silver) (indium, gallium aluminum)(sulfur, selenium) (AIGAS), (copper)(indium, gallium aluminum)(sulfur, selenium) (CIGAS), copper silver tetrakis (selenium tert-butyl)indium aluminum (CAIAS), gallium aluminum tris(selenium tert-butyl) copper silver (CAGAS), copper silver tetrakis(selenium butyl)indium aluminum (AIAS), AGAS, copper (selenium secondary butyl) indium aluminum (CIAS), copper (selenium secondary butyl) gallium aluminum (CGAS), copper silver indium gallium sulfur and/or selenium (CAIGS), silver indium gallium sulfur and/or selenium (AIGS), copper silver indium sulfur and/or selenium (CAIS), copper aluminum/silver gallium sulfur and/or selenium (CAGS), aluminum/silver indium sulfur and/or selenium (AIS) or aluminum/silver gallium sulfur and/or selenium (AGS) polymeric precursor compound. The polymeric precursor compound is enriched or deficient in the quantity of a group 11 atom. EXAMPLE - Polymeric precursor (copper-selenium tert-butyl-selenium n-butyl-indium gallium-bis(selenium n-butyl) (((Cu)(Se tert-butyl)(selenium n-butyl)(0.75 In, 0.25 Ga)(Se n-butyl)2)) (40-60 mg) was initially heated from 20-260 degrees C for 1.5 hours in an inert atmosphere (nitrogen). The sample was allowed to cool before a second heating sequence was performed in which the sample was heated at 10 degrees C/minute from 20-250 degrees C, followed by heating at 2 degrees C/minute to 400 degrees C. The obtained copper indium gallium selenide material was cooled to 20 degrees C for 1 hour.