NOVELTY - A crystalline silicon solar cell laminated with silicon monoxide-silicon nitride composite film (SiOx-SiNx) is prepared by cleaning and etching crystalline silicon glass, subjecting to phosphorus diffusion, plasma etching to remove antireflection coating film, and depositing with SiOx-SiNx lamination film comprising vacuuming tube; heating, nitrogen purging, and vacuum pumping; stress testing; depositing SiOx film and SiNx film in the surface of the silicon glass; depositing SiOx and SiNx film at the back of the silicon glass; and nitrogen purge cooling.    USE - Method for preparation of crystalline silicon solar cell laminated with silicon monoxide-silicon nitride composite film (claimed).    ADVANTAGE - The film has large structural interfacial stress and high interface state density, improves the passivation effect, high adhesion effect to the silicon glass, and does not deposit directly to the silicon nitride.    DETAILED DESCRIPTION - A crystalline silicon solar cell laminated with silicon monoxide-silicon nitride composite film (SiOx-SiNx) is prepared by cleaning and etching crystalline silicon glass, subjecting to phosphorus diffusion, plasma etching to remove antireflection coating film, and plasma-enhanced chemical vapor depositing with SiOx-SiNx lamination film comprising vacuuming tube at 400-420 degrees C; heating at 450 degrees C, nitrogen purging at 8 standard L/minute, and vacuum pumping at pressure of 100 mTorr for 2 minutes; stress testing to ensure that the equipment's internal pressure is constant at 50 mTorr for 50 seconds; depositing SiOx film in the surface of the silicon glass at deposition power of 2500 W, at 450 degrees C and at 1500 mTorr for 900-1200 s, with nitrous oxide flow rate of 4.4-4.8 standard L/minute and silane flow rate of 275-310 standard cm3/minute; depositing with SiNx film at deposition power of 4800 W and at 480 degrees C for 280-300 s, with ammonia flow rate of 5.2-5.8 standard L/minute and silane flow rate of 860-910 standard cm3/minute; depositing SiOx film at the back of the silicon glass at deposition power of 2500 W, at 450 degrees C and at 1500 mTorr for 900-1200 s, with nitrous oxide flow rate of 4.4-4.8 standard L/minute and silane flow rate of 275-310 standard cm3/minute; depositing with SiNx film at deposition power of 4800 W and at 480 degrees C for 280-300 s, with ammonia flow rate of 5.2-5.8 standard L/minute and silane flow rate of 860-910 standard cm3/minute; and nitrogen purge cooling.