NOVELTY - The annealing method involves placing a semiconductor material into a high pressure device so that high pressure is applied to the semiconductor material via the high pressure device. The semiconductor material is then heated to an elevated temperature that remains below the thermal stability limit of the semiconductor material lattice. The high pressure and temperature are maintained for a time sufficient to decrease crystal lattice defects in the semiconductor material as compared to the semiconductor material prior to high pressure treatment.    USE - Annealing method for decreasing defects in semiconductor material. Can be used in the manufacture of a semiconductor device (claimed), e.g., LED, solar cell, laser diode, CPU, graphic integrated circuit (IC), memory IC, surface acoustic wave (SAW) filter, bulk acoustic wave (BAW) filter.    ADVANTAGE - Provides an annealing method that reduces defects in the semiconductor material lattice by 50 to 90 percent as compared to the semiconductor material prior to high pressure treatment. Ensures reduced rate of decay of light emission due to reduced density of defects in the semiconductor material such as gallium nitride. Ensures that the reduction of defects in a semiconductor device, such as LED, allows the LED to be operated at higher operating temperatures, thus generating more intense light emissions for longer durations.    DETAILED DESCRIPTION - The semiconductor material is selected from a group consisting of gallium nitride (12), aluminum nitride, silicon, gallium phosphide, gallium arsenide, and their combinations. The semiconductor material is a semiconductor layer epitaxially grown on a support substrate. The semiconductor material may be formed by vapor phase deposition process, metal organic chemical vapor deposition (MOCVD), or liquid crystallization process. An INDEPENDENT CLAIM is also included for the semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing is an image of gallium nitride on a sapphire semiconductor.    Gallium nitride (12)    Sapphire (14)