NOVELTY - The process comprises containing a molten material in a low aspect ratio, wide diameter crucible (200) for reducing convection currents and thermal variations in the melt, melting solid crystalline material in a pre melter for providing a continuous replenishment of molten material to the crucible for maintaining the crystal/melt interface at a desired level in the crucible, providing heaters beneath the crucible for establishing corresponding thermal zones across the melt, and controlling the thermal output of the heaters for providing an optimal thermal distribution across the melt.    USE - The process is useful for growing a single crystal ingot from a seed crystal positioned at a crystal/melt interface in a molten material (claimed), where the single crystal ingot is useful for fabrication of electronic components of semiconductor devices such as integrated circuit devices or solar cells.    ADVANTAGE - The process allows economical, continuous and rapid growth of the single crystal ingot with high purity and increased throughput and without crystal defects thus enhancing conversion efficiency and performance of the solar cells.    DETAILED DESCRIPTION - The process comprises containing a molten material in a low aspect ratio, wide diameter crucible (200) for reducing convection currents and thermal variations in the melt, melting solid crystalline material in a pre melter for providing a continuous replenishment of molten material to the crucible for maintaining the crystal/melt interface at a desired level in the crucible, providing heaters beneath the crucible for establishing corresponding thermal zones across the melt, and controlling the thermal output of the heaters for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. The step of providing continuous replenishment of molten material to the crucible for maintaining the crystal/melt interface at a desired level comprises: determining the weight of the crucible both empty and with a desired depth of melt in the crucible; sensing the actual weight of the growth crucible during crystal growth; and controlling the output of the pre melter based on a difference between the actual weight of crucible and melt during crystal growth and the determined weight of the crucible with a desired depth of melt by actuating a dispenser for releasing a predetermined amount of solid crystalline feedstock into the pre melter to maintain the desired depth of melt in the crucible. An INDEPENDENT CLAIM is included for a system for growing an ingot from a crystal positioned at a crystal melt interface in a molten material contained in a crucible.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic side view of a system for growing enhanced purity single silicon crystal.    Crucible (200)    Growth chamber (202)    Ingot (203)    Isolation valve (204)    Flow control device. (212)