NOVELTY - A polysilicon with two acid etching texture preparation method involves preparing hydrofluoride-nitric acid solution. The temperature of the acid etching solution is controlled, and a damaged layer of the silicon wafer is treated by the solution. The cleaned silicon wafer is reacted in sodium hydroxide, and the surface of the porous silicon is removed. The wafer is reacted with mixed solution. A secondary acid etching textured silicon wafer is reacted with sodium hydroxide. The silicon wafer is cleaned, after reaction with mixed solution followed by plasma etching and sintering.    USE - Method for preparing polysilicon with two acid etching texture that is utilized in a solar battery.    ADVANTAGE - The method enables eliminating chromatic aberration of solar cells after PECVD coating, in a cost-effective and simple manner.    DETAILED DESCRIPTION - A polysilicon with two acid etching texture preparation method involves preparing hydrofluoride (3-3. 3 mol/l)-nitric acid solution (9-9. 8 mol/l) at a cycle time of 2 hours. The temperature of the acid etching solution is controlled at 3-10 degrees C, and a damaged layer of the silicon wafer is treated by the solution for 40-60 seconds and washed with deionized water. The cleaned silicon wafer is reacted in sodium hydroxide (2%) for 10 seconds, and the surface of the porous silicon is removed and washed with de-ionized water. The wafer is reacted with 5% of hydrofluoride and 10% of hydrochloride mixed solution for 30 seconds, the surface metal ion and oxide layer are removed and washed with deionized water after drying. The temperature of the acid etching solution is controlled at 6-12 degrees C prior to etching. The wafers are placed in an acid etching solution secondary acid etching texture, and the reaction time is controlled for 40-60 seconds. The secondary acid etching textured silicon wafer is reacted in a 2% sodium hydroxide for 10 seconds for removal of the surface of porous silicon and washed with deionized water. The silicon wafer is cleaned, after reaction in the hydrofluoride and hydrochloride mixed solution for 30 seconds, and the surface of the metal ions and the oxide layer are removed and washed with deionized water after drying followed by sequentially plasma etching, removing phosphor-silicon glass, plasma-enhanced chemical vapor deposition (PECVD), screen printing and sintering process to obtain a finished product.