TECHNOLOGY FOCUS - ELECTRONICS - Preferred Assembly: In the solar cell assembly, each of the solar cells (3) includes a metallic substrate (311), a back electrode layer (312) formed on the metallic substrate (311), a top electrode layer structure (33) disposed at one side of the back electrode layer (312) opposite to the metallic substrate (311), and a semiconductor photovoltaic layer (32) disposed between the back electrode layer (312) and the top electrode layer structure (33), the metallic substrate (311) of each of the solar cells (3) having an end portion (311a) corresponding to the first end portion (301) of the respective one of the solar cells (3), the top electrode layer structure (33) of each of the solar cells (3) having an end portion (33a) corresponding to the second end portion (302) of the respective one of the solar cells (3), the end portion (311a) of the metallic substrate (311) of each subsequent one of the solar cells (3) in the series connection being bonded to the end portion (33a) of the top electrode layer structure (33) of the preceding one of the solar cells (3) in the series connection. The top electrode layer structure (33) includes a transparent current diffusion layer (331) formed on the semiconductor photovoltaic layer (32), and a transparent front electrode layer (332) formed on the transparent current diffusion layer (331). The top electrode layer structure (33) includes a transparent current diffusion layer (331) formed on the semiconductor photovoltaic layer, (32) and a front electrode layer (332) formed on the transparent current diffusion layer (331) and having a set of conductive strips (332a) that are spaced apart from one another and that are made from a metallic material. The metallic substrate (311) is flexible. The metallic substrate (311) is made from a metallic material selected from iron (Fe), chromium (Cr), nickel (Ni), and combinations. The metallic substrate (311) is made from stainless steel having a composition comprising 60-77 wt.% of Fe, 15-32 wt.% of Cr, and 8-25 wt.% of Ni. The semiconductor photovoltaic layer (32) is made from a semiconductor material selected from silicon (Si), cadmium telluride (CdTe), copper indium selenide (CuInSe), and copper indium gallium selenide (CuInGaSe). Each of the solar cells (3) includes a nonconductive substrate (313) formed with a through-hole (3130), a back electrode layer (312) formed on the non-conductive substrate (313), a conductive connecting block (314) filling the through-hole (3130) and connected to the back electrode layer (312), a front electrode layer structure (33) disposed at one side of the back electrode layer (312) opposite to the non-conductive substrate (313), and a semiconductor photovoltaic layer (32) disposed between the back electrode layer (312) and the top electrode layer structure (33), the non-conductive substrate (313) of each of the solar cells (3) having an end portion (313a) corresponding to the first end portion (301) of the respective one of the solar cells (3), the through-hole (3130) being formed in the end portion (313a) of the non-conductive substrate (313), the top electrode layer structure (33) of each of the solar cells (3) having an end portion (33a) corresponding to the second end portion (302) of the respective one of the solar cells (3), the end portion (313a) of the non-conductive substrate (313) of each subsequent one of the solar cells (3) in the series connection together with the conductive connecting block (314) being bonded to the end portion (33a) of the top electrode layer structure (33) of the preceding one of the solar cells (3) in the series connection. The non-conductive substrate (313) is flexible. The conductive connecting block (314) is made from a metal selected from gold (Au), silver (Ag), copper (Cu), tungsten (W) and alloys. The top electrode layer structure (33) includes a transparent current diffusion layer (331) formed on the semiconductor photovoltaic layer (32), and a transparent front electrode layer (332) formed on the transparent current diffusion layer (331).