NOVELTY - Manufacture of semiconductor laminate involves coating copper-indium sulfide-type microparticles dispersion on base material (22), forming copper-indium sulfide-type dispersion film (21), drying, presintering, obtaining presintering copper-indium sulfide-type film (23), contacting the obtained film in selenium-containing atmosphere, substituting at least one portion of the sulfur in the film by selenium, obtaining presintering copper-indium selenide-type film (23'), irradiating light (15), sintering, and forming copper-indium selenide-type semiconductor film (5).    USE - Manufacture of semiconductor laminate used for solar cell (all claimed).    ADVANTAGE - The method economically provides semiconductor laminate having high quality, crystallinity and uniformity of the semiconductor film.    DETAILED DESCRIPTION - Manufacture of semiconductor laminate involves coating copper-indium sulfide-type microparticles dispersion in which copper-indium sulfide-type microparticles (2) are dispersed in dispersion medium (1), on base material, forming copper-indium sulfide-type dispersion film, drying the obtained film, presintering, obtaining presintering copper-indium sulfide-type film, contacting the obtained presintering copper-indium sulfide-type film in selenium-containing atmosphere, substituting at least one portion of the sulfur in the resultant copper-indium sulfide-type film by selenium, obtaining presintering copper-indium selenide-type film, irradiating light, sintering the copper-indium selenide-type microparticles (2') in the resultant copper-indium selenide-type film, and forming copper-indium selenide-type semiconductor film. An INDEPENDENT CLAIM is included for solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the manufacture of semiconductor laminate.    Dispersion medium (1)    Copper-indium sulfide-type microparticles (2)    Copper-indium selenide-type microparticles (2')    Copper-indium selenide-type semiconductor film (5)    Light (15)    Copper-indium sulfide-type dispersion film (21)    Base material (22)    Presintering copper-indium sulfide-type dispersion film (23)    Presintering copper-indium selenide-type film (23')