NOVELTY - Method for inducing crystallization of amorphous silicon thin film involves providing glass as growth substrate and triton solution, cleaning the glass substrate surface dirt, ultrasonic cleaning substrate with acetone, ethanol and deionized water, drying with nitrogen, depositing layer of amorphous silicon thin film on substrate using plasma enhanced chemical vapor deposition method, depositing substrate, providing gas source containing silane and hydrogen, annealing, cooling sample naturally in annealing furnace, and etching to remove surface residual aluminum.    USE - Method for inducing crystallization of amorphous silicon thin film used for preparing photoelectric devices e.g. field effect transistor and thin film solar cell.    ADVANTAGE - The method for inducing crystallization of amorphous silicon thin film is efficiently enabled.    DETAILED DESCRIPTION - Method for inducing crystallization of amorphous silicon thin film involves providing glass as growth substrate and Triton solution, cleaning the glass substrate surface dirt, ultrasonic cleaning substrate with acetone, ethanol and deionized water for 15 minutes, drying with nitrogen, depositing layer of amorphous silicon thin film on substrate using a plasma enhanced chemical vapor deposition method, depositing substrate at 250 degrees C, providing gas source containing 5 N 99.999% silane and hydrogen, controlling gas at certain pressure glow discharge and refining furnace voltage range, growing amorphous silicon thin film on the oxidized sample at oxygen chamber at 20-200 degrees C for 0.5-72 hours, forming layer of silicon dioxide film having thickness of 1-20 nm, removing the sample by vacuum evaporation method or sputtering method, depositing on the sample surface of aluminum film having thickness of 5-100 nm, obtaining substrate/silicon-hydrogen/silica/aluminum structure, evaporating or sputtering material to the 99.999% aluminum or aluminum target, placing sample in nitrogen as protective gas, rapid annealing for 10 minutes, cooling the samples in an annealing furnace, then placing in a vacuum degree of 1-10 Pa to the thermostat annealing furnace, annealing at 250-450 degrees C for 1-2 hours, and cooling sample naturally in the annealing furnace, placing sample in a mixed etching solution, annealing and etching to remove surface residual aluminum. The film has thickness of 300 nm.