NOVELTY - Making a photovoltaic cell involves applying passivating layer (35) to first and second sides of wafer, applying to first side a silver paste (500) comprising, prior to firing, silver, a glass component, and a vehicle, applying to the second side an aluminum paste comprising, prior to firing, aluminum, a glass component, and a vehicle, firing the wafer for a time and temperature sufficient to adhere the silver to front side and the aluminum to back side.    USE - For making a photovoltaic cell, used in e.g. MCS heaters, LED lighting, thick film hybrids, fuel cell systems, and automotive electronics (claimed).    ADVANTAGE - The method enables solar cell manufacturers to use novel solar cell designs, to give higher efficiencies and also allow use of thinner wafers that can lead to substantial cost savings in large-scale manufacturing. The invention also allows use of much less backside aluminum paste in certain cell designs compared to conventional solar cells, leading to further cost savings.    DETAILED DESCRIPTION - Making a photovoltaic cell involves providing a silicon wafer (10) having a first side and a second side, applying a phosphorus source to the first side of the silicon wafer, firing the wafer to form a phosphorus glass layer on the first side of the silicon wafer, removing at least a portion of phosphorus glass layer from the first side of the silicon wafer, polishing the second side of the silicon wafer, applying passivating layer (35) to the first and second sides of the wafer, applying to the first side a silver paste (500) comprising, prior to firing, silver, a glass component, and a vehicle, applying to the second side an aluminum paste comprising, prior to firing, aluminum, a glass component, and a vehicle, firing the wafer for a time and temperature sufficient to adhere the silver to the front side and the aluminum to the back side, thus forming front and back contacts. An INDEPENDENT CLAIM is included for device including an electronic circuit comprising aluminum, glass component, and at least one other metal selected from palladium, silver, platinum, gold, boron, gallium, indium, zinc, tin, antimony, magnesium, potassium, titanium, vanadium, nickel, and/or copper.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of fabrication of semiconductor device.    Silicon wafer (10)    N-type layer (20)    Silicon nitride film (30)    Passivating layer (35)    Aluminum paste (70)    Gaps (80)    Silver paste (500)