NOVELTY - Fabricating transparent conductive thin film involves: preparing target for fabricating transparent conductive thin film, comprising aluminum doped zinc oxide material through exploration of composition of the material via evaluation of electrical/optical properties upon deposition at differing positions, where the deposition deposits zinc and aluminum oxides continuously on substrate by off-axis radio frequency (RF) sputtering using sputter guns, respectively loaded with zinc and aluminum oxides; and depositing target on substrate by sputtering it at room temperature.    USE - For fabricating transparent conductive thin film (claimed) which is useful in flexible electronic devices; as transparent conductors for flat panel displays, light emitting diodes or solar cells; and for electromagnetic shielding.    ADVANTAGE - The obtained thin film has superior conductivity (low resistivity of not greater than 10-3 Omega .cm) and high light transmittance of at least 90% even when deposition is carried out at room temperature. The obtained thin film had superior electrical and optical properties. By replacing the indium tin oxide (ITO) thin film, the transparent conductive thin film (aluminum (Al)-doped zinc oxide (AZO) thin film) allow cost reduction and provide environmental protection.    DETAILED DESCRIPTION - Fabricating (M1) a transparent conductive thin film involves: preparing a target for fabricating a transparent conductive thin film comprising a material containing aluminum doped zinc oxide of formula AlxZn1-xO (I) through exploration of a composition of the material via evaluation of electrical and optical properties upon deposition at differing positions, where the deposition deposits zinc oxide and aluminum oxide continuously on a substrate by off-axis radio frequency (RF) sputtering using sputter guns, respectively loaded with zinc oxide and aluminum oxide, at an angle of 90 degrees C to the substrate with varying compositions at differing positions of the substrate; and depositing the target on a substrate by sputtering it at room temperature.    x=0.04-0.063.