NOVELTY - The method comprises disposing a first layer comprising oxygenated cadmium telluride over a support, producing a first vapor (100) comprising cadmium and tellurium from a solid source material (102), reacting a precursor material to form hydrogen telluride, reacting hydrogen telluride with the first vapor to form a second vapor (104) comprising tellurium, and depositing, on the first layer, a coating material comprising cadmium, tellurium or cadmium telluride and oxygen within a deposition environment (108), which comprises oxygen, the first vapor and the second vapor.    USE - The method is useful for depositing a film on a support for fabricating a thin film solar cell such as a cadmium telluride/cadmium sulfide heterojunction-based photovoltaic cell or a photovoltaic device.    ADVANTAGE - The method fabricates the photovoltaic cell having doped absorber layers with higher carrier densities thus improving efficiency of the photovoltaic cell.    DETAILED DESCRIPTION - The method comprises disposing a first layer comprising oxygenated cadmium telluride over a support, producing a first vapor (100) comprising cadmium and tellurium from a solid source material (102), reacting a precursor material to form hydrogen telluride, reacting hydrogen telluride with the first vapor to form a second vapor (104) comprising tellurium, and depositing, on the first layer, a coating material comprising cadmium, tellurium or cadmium telluride and oxygen within a deposition environment (108), which comprises oxygen, the first vapor and the second vapor. The step of depositing the coating material comprises depositing the coating material via close space sublimation, sputtering, vapor transport deposition and/or diffuse transport deposition. The step of reacting hydrogen telluride comprises reacting hydrogen telluride with oxygen. The step of reacting the precursor material comprises heating the precursor material. The precursor material comprises a telluride salt and ammonium telluride. The initial environment comprises cadmium, tellurium, and oxygen. The method further comprises depositing the first layer on the support in an initial environment essentially free of the second vapor. An INDEPENDENT CLAIM is included for a system for depositing a film on a support.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a system for depositing films on a support.    First vapor (100)    Solid source material (102)    Second vapor (104)    Hydrogen telluride source (106)    Deposition environment. (108)