NOVELTY - The structure has a poly crystal silicon ingot which is generated by solidifying molten silicon towards upper direction from the downward direction in a crucible furnace. The oxygen concentration in an upper end portion and a lower end portion of crucible furnace is higher than the oxygen concentration in the center portion of the crucible furnace. The center portion is between the upper end portion and the lower end portion. The oxygen concentration in upper end portion is higher than oxygen concentration in lower end portion.    USE - Poly crystal silicon ingot structure used for manufacturing semiconductor poly crystal silicon wafer used in polycrystalline-silicon solar cell (all claimed).    ADVANTAGE - The oxygen concentration in upper end portion and lower end portion of crucible furnace is higher than the oxygen concentration in the center portion of the crucible furnace, and oxygen concentration in upper end portion is higher than oxygen concentration in lower end portion, such that the gettering effect of the oxygen concentration can be improved effectively. The quality improvement of the poly crystal silicon ingot structure can be attained. The gettering effect can be acquired at low cost.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) poly crystal silicon wafer formed by disconnecting poly crystal silicon ingot;    (2) polycrystalline-silicon solar cell containing the substrate formed from the poly crystal silicon wafer; and    (3) manufacturing method of poly crystal silicon ingot, involves performing melting and heating process in a silicon within the crucible furnace. The unidirectional solidification process is carried out to cool the crucible. The oxygen introduction process is performed in molten silicon for introducing oxygen. The oxygen-containing portion on the inner surface of the position is provided upwardly than the liquid level of the molten silicon during melting of silicon in melting process and is more downwardly than the upper end surface of poly crystal silicon ingot during solidification of silicon in unidirectional solidification process. The liquid level of molten silicon is raised by setting expansion of molten silicon sequentially from the downward direction. The molten silicon and oxygen containing portion are contacted during oxygen introduction process, so that oxygen is diffused from oxygen containing portion in molten silicon. The oxygen-containing powder is poured in molten silicon in the oxygen introduction process after molten more than 50% of silicon is solidified at unidirectional solidification process. The oxygen gas is supplied to molten silicon in oxygen introduction process.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating the distribution of the oxygen concentration in the poly crystal silicon ingot structure. (Drawing includes non-English language text)