TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The SWTE: further comprises an etch defect passivator and citric acid; comprises water, sulfuric acid, citric acid, and phosphoric acid or diethylenetriaminepentakis(methylphosphonic acid) (DTPMP); and additionally comprises boric acid. The UKON etch process includes a UKON etch composition comprising a hydrofluoric acid/nitric acid mixture and water, where the UKON etch process composition has a ratio of hydrofluoric acid/nitric acid of 0.25-0.55. The multi-component process window enhancer comprises sulfuric acid and at least one of phosphoric acid or DTPMP. In the SWTE, sulfuric acid is present at 3-11 wt.%, citric acid is present at 4-12 wt.%, phosphoric acid is present at 35-45 wt.% and water is present at 40-50 wt.%, or sulfuric acid is present at 1-3.25 wt.%, citric acid is present at 1.5-3.75 wt.%, phosphoric acid is present at 8-18 wt.%, boric acid is present at 1.5-3.75 wt.%, and water is present at 74-84 wt.%, or the sulfuric acid is present at 3-11 wt.%, DTPMP is present at 40-54 wt.% and water is present at 39-51 wt.%, or sulfuric acid is present at 1.25-3.25 wt.%, DTPMP is present at 11-19 wt.%, boric acid is present at 1.5-3.75 wt.%, and water is present at 70-88 wt.%, or sulfuric acid is present at 2-6 wt.%, citric acid is present at 2.25-6.5 wt.%, phosphoric acid is present at 19-29 wt.%, DTPMP is present at 22-32 wt.%, and water is present at 35-45 wt.%, sulfuric acid is present at 1.25-2.75 wt.%, citric acid is present at 1.5-3.25 wt.%, phosphoric acid is present at 6-16.5 wt.%, DTPMP is present at 8-18 wt.%, boric acid is present at 1.5-2.25 wt.%, and water is present at 58-78 wt.%. Preferred Method: The surface of the wafer is contacted with the composition at 2-30 degrees C, preferably 12-16 degrees C, for 20-90 seconds, preferably 30-60 seconds. EXAMPLE - 70 ml Sulfuric acid (98%) and 450 ml phosphoric acid (85%) with water and citric acid were combined and heated to obtain the silicon wafer texturing enhancer.