NOVELTY - The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer, forming a conformal junction partner layer over the absorber layer, depositing a smoothing insulator layer over the junction partner layer to fill gaps and depressions in the absorber layer to reduce a roughness of the absorber layer, adding an insulating layer over the smoothing layer, and forming a web-like layer of conductive material over the insulating layer. The absorber layer comprises a group IB-IIIA-VIA material.    USE - The method is useful for roll-to-roll and/or batch manufacturing of a photovoltaic device or a copper-indium-gallium-selenide solar cell.    ADVANTAGE - The method ensures economic and simple manufacture of the photovoltaic device with improved durability, thermal stability and lifespan and high conversion efficiency.    DETAILED DESCRIPTION - The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer, forming a conformal junction partner layer over the absorber layer, depositing a smoothing insulator layer, over the junction partner layer to fill gaps and depressions in the absorber layer to reduce a roughness of the absorber layer, adding an insulating layer over the smoothing layer, and forming a web-like layer of conductive material over the insulating layer. The absorber layer comprises a group IB-IIIA-VIA material. The web-like layer of conductive material comprises carbon nanotubes. The absorber layer prior to deposition of smoothing layer has peaks of 10-100 nm. The smoothing layer comprises an electrically conductive material, sol gel transparent conductive oxide (TCO) or TCO particles, and an electrically conductive leveling layer. The smoothing layer and web layer have the same thickness. The smoothing insulator is sufficient to cover all peaks of rough absorber, and is thin to allow electrons to pass out of the absorber layer. The method further comprises creating the absorber layer: by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer; or by thermal reaction of the precursor layer in an atmosphere containing an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a photovoltaic device.    Base substrate (52)    Base or back electrode (54)    P-type absorber layer (56)    N-type semiconductor thin film (58)    Transparent electrode. (60)