NOVELTY - Fabricating a solar cell (I) having a p-n junction, comprises (a) introduction of an impurity element of a first conductivity type into a semiconductor substrate (32), (b) formation of a layer of material of a second conductivity type opposite to the first conductivity type, (c) heating the substrate to anneal, and (d) growing a layer of combined anti-reflective and protective material in superimposition with the p-n junction.    USE - The method is useful for fabricating solar cell.    ADVANTAGE - The method reduces time and cost and allows the formation of combination layer without undue delay.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) fabricating a solar cell (II), comprising disposing a semiconductor substrate of the first conductivity type having the p-n junction formed by the presence of ions of the second conductivity type implanted in it, heating the substrate to anneal with the thermal processing apparatus, transferring the substrate from the thermal processing apparatus to a plasma deposition chamber, while maintaining the temperature to be within a range of temperatures, and step (d) as above per se by exposing the semiconductor substrate to plasma chemistries; and    (2) a system for fabricating solar cells on the semiconductor substrate of the first conductivity type having the p-n junction formed by introduction of ion impurities of a second conductivity type, comprising: multiple processing stations including the thermal processing apparatus and a plasma processing chamber; a substrate transport device configured to move a substrate between the multiple process stations; a gas delivery system in fluid communication with the processing chamber; a heating system including a pedestal in the plasma processing chamber, where the pedestal holds a substrate and is heated to a selected temperature; a vacuum system in fluid communication with the plasma processing chamber; a microwave source in fluid communication with the plasma processing chamber; and a processor in data communication with the thermal processing apparatus, substrate transport device, gas delivery system, vacuum system, heating system and microwave source; a memory in data communication with the processor; and a computer readable program disposed within the memory to cause the processor to regulate operation of the thermal processing apparatus, substrate transport device, gas delivery system, heater, vacuum system and microwave source, where the computer readable program includes a first set of computer instructions adapted to control the substrate transport device to dispose semiconductor substrate into thermal processing apparatus, a second set of instruction adapted to control the thermal processing apparatus to generate heat and anneal the substrate, a third set of computer instructions adapted to control the substrate transport device to transfer the substrate from the thermal processing apparatus to the plasma deposition chamber and a fourth set of instructions adapted to control the plasma processing chamber, the gas delivery system, heating system, vacuum system, and microwave source to form the layer of combined anti-reflective and protective material in superimposition with the p-n junction.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic side view of a layer stack upon which the anti-reflective layer is deposited with the system.    Substrate (32)    Negative-type layer (34)    Oxide layer (36)    Metal layer (40)    Layer stack (52)