TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The optoelectronic semiconductor structure is configured to generate, when in use, diffusion-assisted current spreading in a direction deviating from the direction of the electric field within the structure. In the semiconductor structure: the distance from any point of the active region to the nearest point of any of the n-type semiconductor region and the p-type semiconductor region is less than or equal to five times, preferably less than or equal to twice the corresponding diffusion length of the charge carriers; the p-n junction lies substantially outside the active region, where the semiconductor structure is configured to generate, when in use, diffusion-assisted transport of charge carriers between the active region and each of the n-type semiconductor region and the p-type semiconductor region; the active region is formed as an active layer preferably extending substantially through the entire semiconductor structure; the n-type and p-type semiconductor regions lie on the same side of the active layer; and a passivation region is formed as a passivation layer (7) preferably extending substantially through the entire semiconductor structure, where the n-type semiconductor region, the p-type semiconductor region and the active region lie on the same side of the passivation layer. The semiconductor structure further comprises a passivation region adjacent to the active region, where the boundary surface is formed by the interface between the passivation region and the active region, and the distance between the boundary surface and any of the n-type semiconductor region and the p-type semiconductor region is less than or equal to five times, preferably less than or equal to twice the corresponding diffusion length of the charge carriers. Preferred Method: The method comprises: spreading current in a direction deviating from the direction of the electric field within the optoelectronic semiconductor structure by means of diffusion; and transporting charge carriers between the active region and each of the n-type semiconductor region and the p-type semiconductor region by means of diffusion.