NOVELTY - The condensing type plasma reactor comprises: a vacuum chamber; a first electrode (5) that is arranged in the vacuum chamber and faces an interior of the vacuum chamber; a second electrode (6) arranged in the vacuum chamber, opposed to the first electrode and spaced from the first electrode at a spacing (D); and a radio frequency electric power supply for supplying power to one of the electrodes, where the other electrode is connected to ground. The two electrodes includes a central region (11) intended to receive a substrate (10), where the spacing is constant in the central region.    USE - The condensing type plasma reactor is useful for depositing a thin film such as amorphous silicon film, microcrystalline silicon film, silicon oxide (SiOx) film, silicon nitride film and microcrystalline carbon film on a plane substrate, a glass such as flat panel display and solar panel, a crystalline silicon substrate such as sensor and insulating layer, and a metal or polymeric flexible sheet using plasma enhanced chemical vapor deposition.    ADVANTAGE - The reactor uniformly and economically deposits the thin film on the substrate without consuming more radio frequency energy and reactive gases, reduces the effects of hot spots, and improves the removal of powder outside a region between the electrodes.    DETAILED DESCRIPTION - The condensing type plasma reactor comprises: a vacuum chamber; a first electrode (5) that is arranged in the vacuum chamber and faces an interior of the vacuum chamber; a second electrode (6) arranged in the vacuum chamber, opposed to the first electrode and spaced from the first electrode at a spacing (D); and a radio frequency electric power supply for supplying power to one of the electrodes, where the other electrode is connected to ground. The two electrodes includes a central region (11) intended to receive a substrate (10), where the spacing is constant in the central region, a peripheral region in which the spacing decreases gradually and symmetrically relative to a median plane and to the two electrodes to form a bevel including a separative space. A ratio of length of the peripheral region and a length of the central region is 0.01-0.6. An angle formed between each of the electrodes and the median plane on the separative space is 30-45 degrees . The two electrodes form the bevel converging towards the separative space in the peripheral region. Each of the electrodes includes a round profile converging towards the separative space in the peripheral region. The separative space has a width, which is equal to or lower than a thickness of sheath, of 1-3 mm. The reactor further comprises: a discharge channel present in fluidic communication with the separative space and connected to a pumping device to allow the evacuation of reactive plasma gases towards an outside of the vacuum chamber; and a unit for opening the reactor at the median plane and one of the electrodes supporting the substrate to introduce and remove the substrate when the reactor is opened and the electrode is lowered. The discharge channel is present in fluidic communication with an opening in a wall of the reactor. The opening is placed in comparison and in extension with the separative space. The discharge channel extends on the periphery part of the electrodes. The electrodes supporting the substrate include a mobile portion in the central area. The mobile portion is lowered to introduce and remove the substrate. An INDEPENDENT CLAIM is included for a method for forming a deposit using a plasma reactor.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of electrodes with a substrate.    First electrode (5)    Second electrode (6)    Substrate (10)    Central region (11)    Spacing. (D)