NOVELTY - A niobium-doped titanium dioxide (TiO2) transparent conductive film is prepared by mixing analytically pure niobium pentoxide (Nb2O5) with TiO2 into a silicone furnace, and pre-burning; cooling, adding polyvinyl alcohol as polymerization agent, and compressing on tableting machine; placing sacrificial material made of silicon wafer into the furnace, sintering, and cooling to obtain TiO2 and Nb2O5 co-doped with oxide ceramic target; and magnetically sputtering with niobium-doped titanium dioxide transparent conductive film, adding reaction gas, and annealing the film.    USE - Method for preparation of niobium-doped titanium dioxide transparent conductive film used for applying on front of the silicon thin film solar cell electrodes, particularly amorphous silicon/microcrystalline silicon cell (claimed).    ADVANTAGE - The method greatly increased the concentration of the film carrier and the conductivity performance, has higher refractive index of 2.4-2.7 than indium tin oxide (ITO) and AZO which will help reduce the loss of light transmission in two media interfaces, increased the absorption rate of light transmittance, improved photoelectric conversion efficiency of the battery, and is more stable in reducing gas at high atmosphere than ITO, FTO and AZO.    DETAILED DESCRIPTION - A niobium-doped titanium dioxide (TiO2) transparent conductive film is prepared by mixing analytically pure 4-5 N of niobium pentoxide (Nb2O5) with TiO2 at mass ratio of 5-12:1 into a high-temperature silicone furnace, and pre-burning for 4-5 hours at 820-850 degrees C; cooling at room temperature, adding polyvinyl alcohol as polymerization agent, and compressing on tableting machine until thickness of 3-5 mm and diameter of 40-50 mm; placing sacrificial material made of silicon wafer into the furnace, sintering at 1350-1380 degrees C for 3-4 hours, and cooling at room temperature to obtain TiO2 and Nb2O5 co-doped with oxide ceramic target; and magnetically sputtering with niobium-doped titanium dioxide transparent conductive film using the sodium calcium-silicon glass as substrate at 3.5-5.5 W/cm2, at 550-650 degrees C and at pressure of 0.8-1.2 Pa, with the distance of the substrate and the target is 3-5 cm and the sputtering background pressure is 3x10-4-1x10-4 Pa, adding reaction gas for 15-20 minutes, and annealing the film at 450-500 degrees C.