NOVELTY - A conductive back reflection electrode based on pyramid texture degree morphology zinc oxide layer, consists of a substrate, a zinc oxide layer with pyramid surface morphology, a metallic silver layer, and a zinc oxide interface layer forming a thin film laminated structure. The zinc oxide layer with pyramid surface morphology is made of intrinsic zinc oxide, or aluminum/gallium/boron/molybdenum/tungsten-doped zinc oxide material. The zinc oxide layer with pyramid surface morphology has a surface roughness of 50-300 nm and a thickness of 0.5-4 mu m.    USE - Conductive back reflection electrode based on pyramid texture degree morphology zinc oxide layer, is used for thin-film solar cells (claimed).    ADVANTAGE - The conductive back reflection electrode has excellent light trapping property, wide spectrum, and high texture degree reflection. The light use ratio is high. the electrode can be prepared by a simple and easy method. When compared with short-circuit current density of batteries prepared under same conditions and based on texture degree metallic aluminum for achieving texture degree reflection, the short-circuit current density of a thin-film solar cell formed using the back reflection electrode is improved by more than 10%.    DETAILED DESCRIPTION - A conductive back reflection electrode based on pyramid texture degree morphology zinc oxide layer, consists of a substrate, a zinc oxide layer with pyramid surface morphology, a metallic silver layer, and a zinc oxide interface layer forming a thin film laminated structure. The zinc oxide layer with pyramid surface morphology is made of intrinsic zinc oxide, or aluminum/gallium/boron/molybdenum/tungsten-doped zinc oxide material. The substrate is hard glass substrate, stainless steel, or flexible polyethylene naphthalate, polyethylene terephthalate, or polyimide. The zinc oxide layer with pyramid surface morphology has a surface roughness of 50-300 nm and a thickness of 0.5-4 mu m. The silver layer has a thickness of 70-500 nm. The interface layer has a thickness of 70-500 nm. An INDEPENDENT CLAIM is included for preparation of conductive back reflection electrode.