NOVELTY - An aqueous coating liquid containing polyvinyl alcohol-type resin having 1,2-diol structural unit (I) with high dopant concentration is partially coated on one surface of a semiconductor substrate (1), and subsequently an organic solvent coating liquid with low dopant concentration is coated on whole surface of substrate. The resultant material is heat-processed, such that dopant high concentration diffusion portion (11a) and selective emitter layer (11) are formed in semiconductor substrate to obtain solar cell.    USE - Manufacture of solar cell (claimed) e.g. pn junction-type solar cell for semiconductor device e.g. transistor and diode.    ADVANTAGE - The method efficiently and reliably provides solar cell having high photoelectric conversion efficiency with reduced surface carbon residue in selective emitted layer.    DETAILED DESCRIPTION - An aqueous coating liquid containing polyvinyl alcohol-type resin having 1,2-diol structural unit of formula: -(C(-R1)(-R2)-C(-R3)(-X-C(-R4)(-OH)-C(-R5)(-OH)-R6))- (I) with high dopant concentration is partially coated on one surface of a semiconductor substrate by screen printing, and subsequently an organic solvent coating liquid with low dopant concentration is coated on the whole surface of the substrate by spin coat method. The resultant material is heat-processed, such that partial coating by screen printing and whole surface coating by spin coat method make the surface layer portion of the semiconductor substrate accumulated and a dopant high concentration diffusion portion is formed. The surface layer portion of the semiconductor substrate into which only the whole surface coating is carried out, is made into dopant low concentration diffusion portion (11b), and a selective emitter layer is formed in the semiconductor substrate to obtain solar cell.    R1-R3,R5-R6=H or organic group;and    X=single bond or linking chain.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of solar cell. (Drawing includes non-English language text)    Semiconductor substrate (1)    Light-receiving surface electrode (4)    Anti-reflective film (5)    Back surface field layer (6)    Selective emitter layer (11)    Dopant high concentration diffusion portion (11a)    Dopant low concentration diffusion portion (11b)