NOVELTY - Optoelectronic semiconductor structure comprises: a negative (n)-type semiconductor region (3); a positive (p)-type semiconductor region (1); a p-n junction formed between the n-type and p-type semiconductor regions; and an active region (2), where the optoelectronic semiconductor structure is configured to transport, when in use, charge carriers between the active region and each of the n-type semiconductor region and the p-type semiconductor region through a single substantially planar boundary surface (9) of the active region.    USE - The optoelectronic semiconductor structure is useful as a part of an LED or a photovoltaic cell in a semiconductor device (all claimed).    ADVANTAGE - The semiconductor structure: can act as both light emitting structure for light emitters and light receiving structure for light absorbers; enables the transport of both n-type and p-type charge carriers into or from the active region through one single planar boundary surface of the active region, as compared to conventional structures; provides the semiconductor device exhibiting improved efficiency and optoelectronic energy conversion; utilizes the passivation region, thus reducing the surface recombination on the edges of the active region, enabling flexible positioning and configuration of the p-type and n-type semiconductor regions, and avoiding a situation where poor interfaces between the active region and some of the p-type and n-type regions would deteriorate the performance of the structure; is less in thickness; and achieves low resistive losses, uniform current density and uniform light emission.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for transporting charge carriers in the optoelectronic semiconductor structure, comprising transporting charge carriers between the active region and each of the n-type semiconductor region and the p-type semiconductor region through a single substantially planar boundary surface of the active region.    DESCRIPTION OF DRAWING(S) - The figure shows schematic view of the LED structure.    Positive-type semiconductor region (1)    Active region (2)    Negative-type semiconductor region (3)    Passivation layer (7)    Boundary surface (9)