NOVELTY - The method comprises forming a thin dielectric layer (370) on a surface of a silicon substrate (304) having a photovoltaic solar cell structure, forming a polysilicon layer over the thin dielectric layer, depositing an etch-resistant dopant material on the silicon substrate, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material or using a non-thermal exposure of the dopant material to UV light through a photo-polymerization process, and heating the silicon substrate and the etch-resistant dopant material.    USE - The method is useful for manufacturing a photovoltaic solar cell (claimed) such as a thin silicon solar cell.    ADVANTAGE - The method ensures efficient and economic manufacture of the solar cell with high thermal stability.    DETAILED DESCRIPTION - The method comprises forming a thin dielectric layer (370) on a surface of a silicon substrate (304) having a photovoltaic solar cell structure, forming a polysilicon layer over the thin dielectric layer, depositing an etch-resistant dopant material on the silicon substrate, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material or using a non-thermal exposure of the etch-resistant dopant material to UV light through a photo-polymerization process, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause a dopant source (320) to diffuse into the silicon substrate. The etch-resistant dopant material comprises dopant source. The step of forming the cross-linked matrix comprises causing a phase change from liquid to solid of the etch-resistant dopant material on the silicon substrate, exposing the etch-resistant dopant material to non-infrared electromagnetic radiation, and transmitting acoustic waves toward the etch-resistant dopant material. The step of exposing the etch-resistant dopant material to non-infrared electromagnetic radiation comprises exposing the etch-resistant dopant material to UV light or exposing the etch-resistant dopant material with light from a visible spectrum or electromagnetic radiation having a wavelength of 380-760 nm. The step of depositing the etch-resistant dopant material comprises dispensing the etch-resistant dopant in liquid form on the silicon substrate or dispensing the etch-resistant dopant material in interdigitated contact fingers on the silicon substrate, and depositing a chemical group comprising a chemical structure, which comprises silanes, cyclosilanes and siloxanes. The step of dispensing the etch-resistant dopant material comprises screen printing and ink-jet printing the etch-resistant dopant material onto the silicon substrate, spin coating the etch-resistant dopant material onto the silicon substrate, and dispensing a dopant material comprising a single-polarity dopant source onto the silicon substrate. The step of dispensing the dopant material comprising the single-polarity dopant source onto the silicon substrate comprises dispensing a positive-type dopant and a negative-type dopant onto the silicon substrate. The method further comprises etching the silicon substrate to remove the dopant source material, and reducing the amount of solvent in the etch-resistant dopant material by heating the etch-resistant dopant material to 400 degrees C after forming the cross-linked matrix in the etch-resistant dopant material. The dopant material is exposed to electromagnetic radiation to perform a curing step comprising acrylate polymerization, cationic polymerization, thiolene chemical application and hydrosilane addition. The etching step comprises etching a part of the photovoltaic solar cell structure of the silicon substrate. An INDEPENDENT CLAIM is included for a solar cell.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a solar cell.    Silicon substrate (304)    Dopant source (320)    Diffusion region (340)    Dielectric layer (370)    Etched-away exposed region. (410)