NOVELTY - Composition for use as resist in nanoimprint lithography processes (NIL), comprises a perfluoropolyether (PFPE)-based reactive copolymer, a reactive diluent and a polymerization initiator.    USE - As a resist in nanoimprint lithography processes; as a stamp material (mold) for use in nanoimprint lithography; for preparing imprinted resist article, and nanopatterned and/or nanoprocessed substrate article use in integrated circuits (IC); integrated optics; nanophotonic devices; photovoltaic devices, preferably solar cells; bit-patterned med displays, preferably TFT-displays; diodes, preferably light emitting diodes (LED) or organic light emitting diodes (OLED); (bio)sensors and/or lab-on-chip devices (claimed); and for removing impurities present on the stamp during the curing step.    ADVANTAGE - The composition is resist composition that provides advanced release properties with a reduced defect rate when de-molding the imprinted resist from a stamp; provides suitable substrate adhesion, etch selectivity, aspect ratio, resolution and/or wetting properties; allows curing in seconds; exhibits excellent wetting properties and forms continuous, stable and homogenous layers after application to the substrate; exhibits a longtime stability, so that it can be stored a couple of days, preferably 3 days without de-wetting; allows suitable curing conditions and release at sub-100 nm resolution for stamps without anti-sticking layers (ASL) and sub-20 nm resolution for stamps with ASL; achieves an excellent resolution of 15 nm easily on a 2x 2 cm2 Si stamp without any defects.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) process (P1) of production of an imprinted resist article by use of nanoimprint processes involving: providing a substrate for nanoimprint processes; applying the resist composition on at least part of the surface of the substrate provided; providing a stamp for nanoimprint processes and imprinting the resist composition applied to the substrate with the stamp to generate a negative copy of the stamp topography on the resist; and subsequently releasing the stamp to set free an imprinted resist article;    (2) imprinted resist article obtainable by the nanoimprint process (P1);    (3) process (P2) of production of a nanopatterned and/or nanoprocessed substrate article by use of nanoimprint lithography processes involving: providing a substrate for nanoimprint lithography processes; applying the resist composition on at least part of the surface of the substrate; providing a stamp for nanoimprint lithography processes and imprinting the resist composition applied to the substrate with the stamp to generate a negative copy of the stamp topography on the resist; releasing the stamp to set free an imprinted resist article on the substrate; and subsequently using at least a part of the imprinted resist article as an etch mask to produce a nanopatterned substrate article comprising at least part of a positive copy of the topography of the imprinted resist article; and/or subsequently etching a part of the imprinted resist article and using the partly etched imprinted resist article as a deposition mask to deposit a further material to the substrate to produce a heterogeneous nanoprocessed substrate article; and    (4) nanopatterned and/or nanoprocessed substrate article obtainable by the nanoimprint lithography process (P2).