TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The first graphene layer includes either two-dimensional (2D) graphene or three-dimensional (3D) graphene. The first polarized ferroelectric layer comprises a ferroelectric polymer, where the ferroelectric polymer comprises poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)). The active layer comprises one of silicon, an organic semiconducting polymer, dye-sensitized molecules, gallium arsenide, cadmium telluride, and copper indium gallium selenide. The organic semiconducting polymer is poly(3-hexylthiophene-2,5-diyl) (P3HT): polycarbonate (PC70BM). Bottom electrode comprises either a metal electrode or a second graphene layer and a second polarized ferroelectric layer. The first graphene layer resides between the first polarized ferroelectric layer and the active layer. The top electrode further includes a conductive layer on the first polarized ferroelectric layer. The first graphene layer comprises doped graphene. First graphene layer has a select work function that is defined by the first polarized ferroelectric layer. The graphene layer comprises between one sheet and forty sheets of one-atom-thickness graphene; or the graphene layer has a select work function that is defined by the polarized ferroelectric polymer of the ferroelectric layer. The second electrode comprises a second graphene layer and a second polarized ferroelectric layer, and further comprises second polarized ferroelectric layer forming a second internal electric field that extends into the active layer, thus further contributing to the moving of the electrons and holes to opposite ones of the first and second electrodes. The active layer comprises one of: silicon, an organic semiconducting polymer, dye-sensitized molecules, gallium arsenide, cadmium telluride, and copper indium gallium selenide. The first graphene layer has a select work function that is defined by the first polarized ferroelectric layer. Preferred Process: The charge carriers are subjected to an amount of charge-carrier recombination, and where the internal electric field reduces the amount of charge carrier recombination.