NOVELTY - Preparing transition metal load type fullerene nanomaterial, comprises dissolving fullerene in mortar, adding good solvent into mortar dissolved fullerene and putting into a glass bottle, shaking the bottle and filtering to obtain saturated solution, mixing transition metal element containing compound with poor solvent, placing the saturated solution in natural light or fixed wavelength light transmission container and adding the filtered solution to form interface, and placing the interface in culture box to culture.    USE - The method is useful for preparing transition metal load type fullerene nanometer material i.e. nanotube, nanowhisker or nanochip (claimed), which is useful in fuel cell electrode, catalyst or catalyst carrier, semiconductor and high-molecular composite material.    ADVANTAGE - The method prepares transition metal load type fullerene nanomaterial with high detachable property and good repeatability in an environment friendly manner.    DETAILED DESCRIPTION - Preparing transition metal load type fullerene nanomaterial, comprises: (a) dissolving fullerene in mortar and then grinding to obtain metal luster, adding good solvent into dissolved fullerene to obtain mixed liquid, putting the liquid into a glass bottle, ultrasonically shaking the bottle at room temperature and then filtering to obtain fullerene saturated solution, and placing the saturated solution in ice water bath at 0-5 degrees C; (b) weighing and mixing certain amount of transition metal element containing compound with poor solvent, filtering the mixed solution to obtain the transition metal element containing poor solvent, and placing the metal element containing poor solvent in ice water bath at 0-5 degrees C; and (c) placing the saturated solution in natural light or fixed wavelength light transmission container, adding the metal element containing poor solvent into the saturated solution to form interface, placing the interface in ice water bath at 0-5 degrees C, evenly and ultrasonically mixing the interface, and placing the interface in culture box to culture at a constant-temperature of -5 to -20 degrees C.