NOVELTY - A diamond/cadmium telluride thin-film solar cell manufacturing method involves pre-treating and surface modification on a silicon substrate/p-type diamond thin-film. A pre-treated p-type layer is placed into the diamond film of a UV ozone cleaning machine. The surface modified p-type diamond film is deposited on n-type thin-film to form n-type thin film heterojunction. Annealing treatment is performed on the thin film followed by etching a silicon substrate in a window layer light absorption area and evaporating a thin film solar cell to obtain a finished product.    USE - Method for manufacturing a diamond/cadmium telluride thin-film solar cell.    DETAILED DESCRIPTION - A diamond/cadmium telluride thin-film solar cell manufacturing method involves pre-treating and surface modification on a silicon substrate/p-type diamond thin-film using acetone ultrasonic cleaning for 5-15 minutes to remove surface oils on the diamond film, and ultrasonically cleaning with deionized water for 10-20 minutes to remove surface impurities. The pre-treated p-type layer is placed into the diamond film of the UV ozone cleaning machine for surface modification and modification to reduce the contact barrier and improve the bonding strength between the film heterogeneous at UV wavelength of 185 nm and 254 nm, and temperature of 50-150 degrees C for 1-5 minutes. The surface modified p-type diamond film is deposited on n-type diamond/cadmium telluride thin-film at sublimation source temperature of 550-650 degrees C, substrate temperature of 450- 500 degrees C, a distance of 1-5 mm and distillation time of 1-2 minutes to form a n-type diamond/cadmium telluride thin film heterojunction. Annealing treatment is performed on the p-type diamond/n-type diamond/cadmium telluride thin film using cadmium chloride in the presence of 5-20 ml/minute argon gas in 500-1500 Pa reaction chamber pressure, with the sputtering power of 100-500 W for 10-20 minutes, and the substrate temperature is maintained at 400-500 degrees C for 10-30 minutes followed by etching a silicon substrate in a window layer light absorption area using 1-20% sodium hydroxide solution, and performing metal contact deposition using a vacuum deposition method and evaporating the p-type diamond/n-type diamond/cadmium telluride thin film solar cell at 100-300 degrees C for 30-60 minutes to obtain finished product.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a diamond/cadmium telluride thin-film solar cell.