NOVELTY - The method comprises providing a source of a solid organic material in an atmosphere at a pressure of 50-200 kPa, heating the organic material to a first temperature to produce a vapor of organic material, and exposing a surface of a substrate (14) having a second temperature lower than the first temperature to the vapor to deposit organic material from the vapor onto a surface of the substrate. The pressure is an ambient pressure. The first temperature and the second temperature are higher than 30 degrees C. The first temperature is 20-350 degrees C. The second temperature is 20-200 degrees C.    USE - The method is useful for depositing a layer of an organic material on a substrate for producing an organic electronic device such as organic FET, organic solar cell or organic LED, where: the layer is an organic semiconducting layer, dielectric or insulating layer, layer comprising a surface modifying agent, layer with electron-conducting properties, layer comprising a hole-conducting material, exciton- and/or electron-conducting layer, multiplication layer, hole-injecting layer, hole-transporting layer, light-emitting layer, electron-transporting layer, electron-injecting layer, encapsulation layer, light-absorbing layer, sensor layer, photosensitive layer, barrier layer and self-assembled monolayer; the substrate is inorganic glasses, quartz, ceramic foils or plates, undoped or doped inorganic semiconductors, polymeric materials, filled polymeric materials, and coated or uncoated metallic foils or plates; the organic material is rylene diimides and naphthalene diimides, tetraazaperopyrene, diketopyrrolopyrrole, fullerenes and fullerene derivatives, thiophene compounds, aromatic compounds with condensed thiophene unit, acenes, spiro compounds, metal complexes, and organo-silicon and organophosphorus compounds in the form of self-assembled monolayers; and the material for forming the self assembled monolayers comprises silanes, trialkoxyalkyl-3-glycidyl ether silanes, trialkoxyallylsilanes, trialkoxy(isocyanatoalkyl)silanes, trialkoxysilyl(meth)acryloyloxyalkanes, trialkoxysilyl(meth)acrylamidoalkanes, phosphonic acids, carboxylic acids, hydroxamic acids, amines, phosphines, thiols, n-octadecyltrimethoxysilane, n-octadecyltriethoxysilane, octadecyltrichlorosilane, hexamethyldisilazane, hexadecanethiol, mercaptoacetic acid, 3-mercaptopropionic acid, mercaptosuccinic acid, 3-mercapto-1-propanesulfonic acid, alkali metal and its ammonium salts, octadecylphosphonic acid and/or 12,12,13,13,14,14,15,15,16,16,17,17,18,18-pentadecafluorooctadecylphosphonic acid (all claimed).    ADVANTAGE - The method is capable of producing the organic electronic devices in a cost effective manner.    DETAILED DESCRIPTION - The method comprises providing a source of a solid organic material in an atmosphere at a pressure of 50-200 kPa, heating the organic material to a first temperature to produce a vapor of organic material, and exposing a surface of a substrate (14) having a second temperature lower than the first temperature to the vapor to deposit organic material from the vapor onto a surface of the substrate. The pressure is an ambient pressure. The first temperature and the second temperature are higher than 30 degrees C. The first temperature is 20-350 degrees C. The second temperature is 20-200 degrees C. A difference between the first temperature and the second temperature is 10-100 degrees C. The atmosphere in which the organic material is vaporized consists of a gas or a gas mixture that is inert towards the organic material and air. The substrate is moved through the vapor and moved through areas with different concentration of the organic material in the vapor, and arranged above the source of the solid organic material. A distance between the source and the substrate is 0.5-3 mm. A deposition rate of a layer (15) of the organic material on the substrate is 1-600 nm/minute.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of an organic FET that has an organic semiconducting layer of compound deposited onto a silicon/silicone dioxide substrate.    Silicone wafer (11)    Gate structures (12)    Dielectric layer (13)    Substrate (14)    Layer of organic material. (15)