NOVELTY - The device has a drift region (102) placed on a surface (100a) of a substrate (100). A deep trench doped region (106) is placed in a deep trench (104) of the drift region. An epitaxial region (108) is placed on the drift region. A trench gate (114) passes through the epitaxial region. A gate insulating layer (116) is placed on a surface of the trench gate. A source region (110) is placed in the epitaxial region and placed beside two sides of the trench gate. A drain electrode (124) is placed on another surface (100b) of the substrate. A source electrode (122) is placed on the source region.    USE - Trench metal oxide semiconductor transistor device for use in electronic devices and power supply systems for electric vehicle/hybrid electric vehicle industries, distributed power and smart grid industries, and wind power and photovoltaic system industries.    ADVANTAGE - The device enables thickness of the drift region under the deep trench doped region to be thinner than thickness of the drift region under the trench gate, so that the drift region under the deep trench doped region can form a depleted region in a quick manner, a PN junction at the bottom of the deep trench doped region can sustain a withstand voltage in a fast manner, and an avalanche breakdown can occur in an easy manner to avoid breakdown occurring at the bottom and corner of the trench gate, thus avoiding insufficient turn-on current of the device, and enhancing electric field strength at the gate oxide layer of the device when the breakdown of the device occurs. The doped region formed at the bottom of the deep trench doped region is omitted, so that a side spacer can isolate electric current when the device is turned on or operated with a reversed breakdown voltage, thus improving reliability of the device.    DETAILED DESCRIPTION - The deep trench doped region is a P-type deep trench doped region. The epitaxial region is a P-type epitaxial region. The substrate is an N positive substrate. The drift region is an N negative drift region. An INDEPENDENT CLAIM is also included for a method for manufacturing a trench metal oxide semiconductor transistor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure illustrating a method for manufacturing a trench metal oxide semiconductor transistor device.    Substrate (100)    Substrate surfaces (100a, 100b)    Drift region (102)    Deep trench (104)    Deep trench doped region (106)    Epitaxial region (108)    Source regions (110, 112)    Trench gate (114)    Gate insulating layer (116)    Source electrode (122)    Drain electrode (124)