TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal gate material comprises titanium. The ILD material comprises low-k dielectric material. The removal rate of the metal gate material is less than 2 Angstrom min-1. The removal rate of the ILD is less than 50 Angstrom min-1. The removal rate of SOG is 500-2000 Angstrom min-1. The removal composition comprises at least one fluoride, at least one metal corrosion inhibitor, water, and at least one organic solvent. The pH of the removal composition is less than 7. The fluoride source comprises a species including ammonium fluoride (preferred), hydrofluoric acid ammonium bifluoride, hexafluorosilicic acid (HFSA), ammonium hexafluorosilicate, tetrafluoroboric acid, ammonium tetrafluoroborate, tetrabutylammonium tetrafluoroborate (TBA-BF4), hexafluorotitanic acid or ammonium hexafluorotantalate. The pH of the removal composition is 3-7. The removal composition is devoid of abrasive or other inorganic particulate material, silicic acid, surfactant(s), oxidizing agent(s) or polymeric species.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The metal corrosion inhibitor comprises a species including iminodiacetic acid (IDA), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotris(methylenephosphonic acid) (NTMP) (all preferred), boric acid, ammonium borates, ascorbic acid, L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, gallic acid, glycine, serine, proline, leucine, alanine, asparagine, aspartic acid, glutamine, valine, lysine, boric acid, nitrilotriacetic acid, malic acid, acetic acid, maleic acid, 2,4-pentanedione, N,N,N',N'-ethylenediaminetetra(methylenephosphonic)acid (EDTMP), 1, 5, 9-triazacyclododecane-N,N',N''-tris(methylenephosphonic acid) (DOTRP), 1,4,7,10-tetraazacyclododecane-N,N',N'',N'''-tetrakis(methylenephosphonic acid) (DOTP), diethylenetriaminepenta(methylenephosphonic acid) (DETAP), aminotri(methylenephosphonic acid), bis(hexamethylene)triamine phosphonic acid, 1, 4, 7-triazacyclononane-N,N',N''-trismethylenephosphonic acid (NOTP), esters of phosphoric acids, 5-amino-1,3,4-thiadiazole-2-thiol (ATDT), benzotriazole (BTA), citric acid, ethylenediamine, oxalic acid, tannic acid, EDTA, uric acid, 1,2,4-triazole (TAZ), tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3- triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 5-phenylthiol-benzotriazole, halo-benzotriazoles, naphthotriazole, 2-mercaptobenzimidazole (BI), 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole, 2,4-diamino-6-methyl-1,3,5-triazine, thiazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, imidazoline thione, mercaptobenzimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol, benzothiazole, tritolyl phosphate, imidazole, indiazole, benzoic acid, malonic acid, ammonium benzoate, catechol, 4-tert butyl catechol, pyrogallol, resorcinol, hydroquinone, cyanuric acid, barbituric acid and derivatives such as 1,2-dimethylbarbituric acid, alpha -keto acids such as pyruvic acid, adenine, purine, glycine/ascorbic acid, p-tolylthiourea, succinic acid, phosphonobutane tricarboxylic acid (PBTCA), alkyl phosphates or phosphoric acid. The removal composition: comprises quaternary ammonium bases, a buffered fluoride, a glycol solvent, a phosphonic acid, or water; NH4F, HEDP, IDA, ethylene glycol, or water; and further comprises dissolved SOG, at least one buffering agent including a salt of the conjugate base of the fluoride source or ammonia. The organic solvent comprises a glycol solvent comprising ethylene glycol (preferred), propylene glycol, diethylene glycol, dipropylene glycol, glycerol, a monoglyceride, a diglyceride or a glycol ether.