TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The process comprises disposing the colloidal inorganic semiconductor layer on a substrate by adsorption or chemical coupling, dispersing the semiconductor layer in a dispersion solvent, introducing a stabilization compound or the layer in the dispersion solvent and in the precursor solution, and purifying the semiconductor layer by flocculation and precipitation or by filtration. Preferred Components: The material to be deposited comprises a composition of Mx Ey comprising a cationic element (M) and an anionic element (E) in stoechiometric ratio, which is characterized by x and y values corresponding to absolute values of average oxidation of the elements. The composition comprises a chalcogenide, a phosphide or an oxide. The film to be deposited comprises a composition consisting of cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, germanium sulfide (GeS or GeS2), germanium selenide (GeS or GeSe2), germanium telluride, tin sulfide (SnS or SnS2), tin selenide (SnSe or SnSe2), tin telluride, lead sulfide, lead selenide, lead telluride, copper indium sulfide, copper indium selenide, silver indium sulfide, silver indium selenide, copper sulfide (CuS or Cu2S), silver sulfide, silver selenide, silver telluride, iron sulfide (FeS or FeS2), indium phosphide, cadmium phosphide, zinc phosphide, cadmium oxide, zinc oxide, iron oxide (FeO or Fe3O4), aluminum oxide, titanium oxide, silicon oxide or their alloys. The film to be deposited comprises a transition metal or lanthanide, an element producing an excess or a deficit electrons with respect to the film, and a metal. The metal comprises gold, silver, nickel, molybdenum and aluminum. The substrate comprises silicon oxide, aluminum oxide, indium-titanium oxide, titanium oxide, gold, silver, nickel, molybdenum, aluminum, silicon, germanium, silicon carbide, graphene, cellulose, and a polymer. A flow of introduction of precursor solution is determined so that a speed of increasing the thickness of the semiconductor layer is 1 nm per second to 0.1 nm per hour. A temperature of the reaction medium is -100 degrees C to 350 degrees C. If the element (E) is chalcogenide, the precursor is a compound containing the chalcogenide with oxidation degree of -2 and is formed in-situ by the reaction of a reducing agent with a compound having oxidation degree of 0 or a positive oxidation degree. If the element (E) is sulfur, the precursor is salt containing sulfur ions (S2-). If the element (E) is selenide, the precursor comprises a salt containing selenide ions (Se2-). If the element (E) comprises tellurium, the precursor is salt containing tellurium ions (Te2-). If the element (E) is oxygen, the precursor is hydroxide ion (HO-). If the element (M) is a metal, the precursor is a compound containing a metal having a positive or null oxidation degree and is a metallic salt. The metallic salt is carboxylate, chloride, nitrate, sulfate, or thiolate. The material has a thickness of 0.5 nm, preferably 0.5-25 nm.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The dispersion solvent comprises distilled water, methanol, ethanol, isopropanol, butanol, chloroform, acetone, hexane, tetrahydrofuran, and dimethyl sulfoxide. The dispersion solvent is a supercritical fluid or an ionic liquid. The stabilization compound comprises an organic ligand. The organic ligand comprises a carboxylic acid, a thiol, an amine or a phosphine and a quaternary ammonium, and is an ion. The precursor comprises bis(trimethylsilyl) sulfide, hydrogen sulfide, sodium hydrosulfide, sodium sulfide, ammonium sulfide, thiourea, thioacetamide or sodium selenosulfate. The reducing agent comprises sodium tetrahydridoborate. The oxygen precursor is a solution of sodium hydroxide, potassium hydroxide, or tetramethylammonium hydroxide.