NOVELTY - The photodiode (400) has a wide bandgap junction (404) with a lattice matched homo-junction (430) to detect a first light spectrum. A narrow bandgap junction (406) is coupled to the wide bandgap junction, and comprises a short-wavelength infrared photodiode structure to detect a second light spectrum. The lattice matched junction comprises an intrinsic-type indium phosphide layer (422) sandwiched by a positively doped indium phosphide layer (420) and a negatively-type doped indium phosphide layer (424). The wide bandgap junction comprises a positively doped indium gallium arsenide layer (408).    USE - Back illuminated dichromatic photodiode e.g. avalanche photodiode, for extending short-wavelength infrared camera sensitivity range to a visible region. Can also be used for PIN diode for attenuator, fast switch, photodetector and high voltage power electronic applications, and photo conductor in solar cell and motion detector applications.    ADVANTAGE - The narrow bandgap junction is coupled to the wide bandgap junction, and comprises the photodiode structure to detect the light spectrum, so that the photodiode can extend an SWIR camera sensitivity range to a visible region. The photodiode allows extending SWIR camera sensitivity range to allow higher level of integration to reduce difficulty of integrating multiple band photo detection and imaging and to cover multiple optical bands with high efficiency and density by using the photodiode, thus improving camera image quality and reducing weight, volume and power consumption of the photodiode.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a method for performing dichromatic photodetection    (2) a method for providing a dichromatic photodiode.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a dichromatic photodiode comprising a dual-junction structure coupled to a transparent substrate and/or microlens.    Dichromatic photodiode (400)    Wide bandgap junction (404)    Narrow bandgap junction (406)    Positively doped indium gallium arsenide layer (408)    Positively doped indium phosphide layer (420)    Intrinsic-type indium phosphide layer (422)    Negatively-type doped indium phosphide layer (424)    Lattice matched homo-junction (430)