TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Method: The method further comprises: refurbishing (260) the substrate after the step of selectively etching the first intermediate layer and prior to the step of forming the second intermediate layer; and forming openings (230) in the first single crystal silicon layer, where the step of selectively etching the first intermediate layer comprises etching the first intermediate layer through the openings. The refurbishing step comprises at least one of: etching residue from a surface of the substrate; polishing the substrate; or re-growing a portion of the substrate. The step of forming the first single crystal silicon layer comprises: epitaxially growing the first single crystal silicon layer on the first intermediate layer; forming holes in the first intermediate layer; and epitaxially growing silicon from the substrate through the holes and over the first intermediate layer. The step of forming the first intermediate layer comprises one of: epitaxially growing the first intermediate layer on the substrate by epitaxially growing one of silicon-germanium or silicon-arsenic on the substrate; implanting an impurity into the substrate, where the impurity comprises one of germanium or arsenic; or forming oxide or nitride on the substrate. Preferred Components: The first intermediate layer is composed of one of oxide or nitride. In the semiconductor structure: at least one of a number of the openings, a size of the openings or a spatial orientation of the openings is based on at least one of a thickness of a sacrificial intermediate layer, a composition of the sacrificial intermediate layer or an etch chemistry for detaching the single crystal silicon solar cell from the sacrificial intermediate layer; and the single crystal silicon solar cell comprises a layer of single crystal silicon, where the etch openings extend completely through the layer of single crystal silicon. The semiconductor structure further comprises solar cell wiring in and/or on the layer of single crystal silicon, where the layer of single crystal silicon has a thickness of 5-50 mu m, and the etch openings have a width of 100 nm to 1 mu m. EXAMPLE - No suitable example given.