NOVELTY - Substrate treatment apparatus (I) comprises: a substrate holding unit; a chemical liquid supplying unit having a nozzle (4) which supplies the chemical liquid onto the major surface of the substrate; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate to heat the supplied chemical liquid by irradiation with infrared radiation emitted from the lamp, where the heater has a smaller diameter than the substrate; and a heater moving unit to move the heater along the major surface of substrate.    USE - The apparatus is useful for treating a major surface of a substrate (claimed) such as wafers, substrates for LCD, plasma display and emission display devices, substrates for optical disks, magnetic disks, magneto-optical disks and photo masks, ceramic substrates and substrates for solar cells.    ADVANTAGE - The apparatus: is capable of maintaining the chemical liquid on the major surface of the substrate at higher temperature, thus facilitating the entire major surface of the substrate to be treated evenly by the chemical liquid, promoting the lift-off of the hardened resist without ashing by reducing the consumption of the chemical liquid, eliminating the problem of the damage to the major surface of the substrate due to the ashing, and reducing the period for the treatment with the chemical liquid; utilizes the lamp housing, which is heat-resistant and highly transparent, that prevents an atmosphere containing droplets of the chemical liquid around the major surface of the substrate from adversely influencing the infrared lamp, and thus the amount of the infrared radiation emitted from the lamp can be stably maintained for a longer period of time; and suppresses the generation of the mist of the chemical liquid when the chemical liquid is present on the major surface of the substrate.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a substrate treatment method (M1) for removing a resist from a substrate surface, comprising: supplying the chemical liquid at a predetermined flow rate onto a major surface of the substrate, and rotating the substrate at a first rotation speed to form a liquid film of the chemical liquid on the major surface of the substrate as covering the major surface; rotating the substrate at a second rotation speed lower than the first rotation speed, so that the chemical liquid film formed on the major surface of the substrate is retained on the major surface; a liquid film heating step of, simultaneously with the liquid film retaining step, locating a heater in opposed relation to the major surface of the substrate and heating the retained chemical liquid film by the heater; and a heater moving step of, simultaneously with the liquid film retaining step and the liquid film heating step, moving the heater along the major surface of the substrate;    (2) a substrate treatment method (M2) for removing a resist from a substrate surface, comprising: the liquid film forming; a liquid film thinning step of, after the liquid film forming step, rotating the substrate at a first rotation speed without supplying the chemical liquid onto the major surface of the substrate, by which the chemical liquid film formed on the major surface of the substrate is thinned; a liquid film retaining step of, after the liquid film thinning step, rotating the substrate at a second rotation speed lower than the first rotation speed without supplying the chemical liquid onto the major surface of the substrate, by which the chemical liquid film formed is retained on the major surface of the substrate; and a liquid film heating step of, simultaneously with the liquid film retaining step, heating the substrate or the chemical liquid film retained on the major surface of the substrate by a heater;    (3) a substrate treatment apparatus (II) (1) comprising: a treatment chamber (2); the substrate holding unit (3) provided in the treatment chamber; the chemical liquid supplying unit; the infrared lamp; an annular gas outlet port to be located in opposed relation to the major surface of the substrate to radially spout a gas along the major surface of the substrate; and a retention head which retains the infrared lamp and the gas outlet port together; and    (4) a substrate treatment apparatus (III) comprising: the substrate holding unit; a chemical liquid flow pipe through which a chemical liquid is supplied onto a major surface of the substrate; the chemical liquid supplying unit which supplies the chemical liquid to the chemical liquid flow pipe; the heater surrounding the chemical liquid flow pipe; a retention head which retains the heater and the chemical liquid flow pipe together; and a retention head moving unit which moves the retention head along the major surface of the substrate, where the chemical liquid flowing through the chemical liquid flow pipe is heated by the irradiation with the infrared radiation emitted from the lamp.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the substrate treatment apparatus.    Substrate treatment apparatus (1)    Treatment chamber (2)    Substrate holding unit (3)    Nozzle (4)    Cup (5)