NOVELTY - Method for dry-etching two-step aluminum-induced crystallization of amorphous silicon membrane involves adding polyoxyethylene-8-octyl phenyl ether TritonX-100 (RTM: t-octylphenoxypolyethoxyethanol) solution, washing glass substrate, ultrasonic cleaning successively substrate with acetone, ethanol and deionized water, drying with nitrogen, depositing amorphous silicon film on substrate using a plasma enhanced chemical vapor deposition method, placing in the vacuum, cooling samples in annealing furnace and placing in magnetron sputtering etching.    USE - Method for dry-etching two-step aluminum-induced crystallization of amorphous silicon membrane used in field effect transistors and membrane solar batteries.    ADVANTAGE - The two-step aluminum-induced crystallization of amorphous silicon membrane is efficiently dry-etched.    DETAILED DESCRIPTION - Method for dry-etching two-step aluminum-induced crystallization of amorphous silicon membrane involves adding polyoxyethylene-8-octyl phenyl ether TritonX-100 (RTM: t-octylphenoxypolyethoxyethanol) solution, washing the glass substrate on surface dirt, ultrasonic cleaning successively substrate with acetone, ethanol and deionized water for 15 minutes, drying with nitrogen, depositing an amorphous silicon film on substrate using a plasma enhanced chemical vapor deposition method, controlling film thickness to 300-500 nm, depositing substrate temperature at 250 degrees C, providing 99.999% gas source of silane and hydrogen, controlling the gas pressure of glow discharge to 50-200 Pa under RF voltage of 13.56 MHz, placing growth of the amorphous silicon film samples in a oxygen chamber, oxidizing at 20-200 degrees C for 0.5 -72 hours, forming layer of silicon dioxide thin film to 1-20 nm, providing the sample using vacuum evaporation method or sputtering method, depositing on the sample surface for the aluminum film having thickness of 5-100 nm, obtaining substrate/a-silicon:hydrogen/silica/aluminum structure, evaporating or sputtering material which is 99.999% aluminum or aluminum target, placing sample in an annealing furnace with nitrogen as protective gas at 450-550 degrees C for 10 minutes, placing in the vacuum under pressure of 1-10 Pa in the constant annealing furnace at 250-450 degrees C, performing temperature annealing treatment for 1-2 hours, cooling the samples in an annealing furnace and placing in the annealed sample in a magnetron sputtering etching to remove surface residual aluminum.