NOVELTY - The wafer (1) has a largest surface (10) formed with a largest area. A side surface (12) is connected to a fringe of the largest surface. A nanostructured layer (14) is formed on the side surface for assisting the stress dispersion of the wafer. An included angle between the side surface and the largest surface ranges from 45 to 90 degrees. The side surface and the largest surface are interconnected by a fillet. The side surface is one of a rectangular surface and an annular surface. The largest surface of the wafer is one of a rectangle, rhombus, circle, ellipse and a square.    USE - High rupture resistance wafer e.g. n-type semiconductor, p-type semiconductor, solar cell wafer, LED wafer and semiconductor wafer (all claimed), for portable electronic products such as smart mobile phone, notebook computer and tablet, in a semiconductor industry such as solar power industry, LED industry and biotechnology industry.    ADVANTAGE - The side surface forms the nanostructured layer to assist the stress dispersion of the wafer, so that the wafer is provided with high rupture resistance to protect the wafer from damage during semiconductor or other processes or protect the wafer from intense stress concentration and damages such as defects, on functional structures of the largest surface or defects produced during wafer processing while resisting tensile force to enhance the rupture resistance of the wafer.    DETAILED DESCRIPTION - The wafer is made from one of glass, silicon, germanium, carbon, aluminum, gallium nitride, gallium arsenide, gallium phosphide, sapphire, spinel, aluminium oxide, silicon carbide, zinc oxide, magnesium oxide, lithium aluminate, lithium aluminium oxide and magnesium aluminate. An INDEPENDENT CLAIM is also included for a wafer.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a high rupture resistance wafer.    High rupture resistance wafer (1)    Largest surface (10)    Side surface (12)    Nanostructured layer (14)