NOVELTY - The method involves providing a base structure, and forming a p-type doped layer (213) above a base structure. A defect-induced internal electrical connection layer (22) is formed by using a mixture comprising a group IV-based precursor and a nitrogen-based precursor, where a number of atoms of group IV element e.g. carbon, and nitrogen element are greater than 50% of total number of atoms in the electrical connection layer. An n-type doped layer (231) is formed, where the connection layer is deposited between the doped layers and electrically coupled between the doped layers.    USE - Method for manufacturing a semiconductor apparatus e.g. semiconductor light-emitting device such as LED, and solar cell. Can also be used for manufacturing a photo detector, transistor and a diode i.e. laser diode.    ADVANTAGE - The method enables the connection layer to be used as a tunnel junction layer between the doped layers to perform Fowler-Nordheim tunneling (F-N tunneling) since significant difference is provided between lattice constants of junction materials that cause band bending to reduce band gap distance of charge tunnel, thus generating F-N tunnel current without employing a heavy doping method. The method enables simplifying complex process control and enhancing fabrication material selection in an easy manner.    DETAILED DESCRIPTION - The internal electrical connection layer is formed by using chemical vapor deposition, physical vapor deposition, or implantation operation. The base structure is formed by another n-type doped layer (211) and an intermediate layer (212). The intermediate layer is a light-emitting layer in LED or light-absorbing layer in a solar cell. The p-type doped layer has a p-dopant concentration of 1018-1021 atoms per cubic cm, and the latter n-type doped layer has an n-dopant concentration of 1018-1021 atoms per cubic cm.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor apparatus.    Semiconductor devices (21, 23)    Defect-induced internal electrical connection layer (22)    Semiconductor apparatus (200)    N-type doped layers (211, 231)    Intermediate layers (212, 232)    P-type doped layers (213, 233)