NOVELTY - A metal-organic chemical vapor deposition (MOCVD) system (400) comprises: chamber, substrate (402) support system, and gas emission system; where support system comprises support planets (404) equidistant from central axis of support system perpendicular to plane; gas-emission system comprises gas-emitting fixture (410) at central axis, radially emits several gases at equal total flow rates (414) across planets, and provides several isolated environments to deposit uniform layers on substrates; and system is operable to vary greater than or equal to 1 process parameter in each isolated environment.    USE - As metal-organic chemical vapor deposition (MOCVD) system, useful for forming layers on substrate (all claimed) such as for forming optoelectronics devices e.g. LEDs (blue or green LEDs), infrared LEDs, lasers, and solar cells, including III/V technology; and in applications involving II/VI technologies, such as CdTe photodiodes and HgCdTe photodetectors.    ADVANTAGE - The MOCVD system provides high throughput processing. A combination of conventional processing and combinatorial processing in isolated environments are used to develop and investigate materials and processes to manufacture optoelectronic devices such as LED. The application of high productivity combinatorial (HPC) techniques to develop and investigate materials and processes for manufacture of thin film LEDs can significantly improve research and development throughput as well as results in significant cost savings in materials and time, as MOCVD system can readily provide variations on multi-quantum well layers and thicknesses, while maintaining other parameters constant. The system enables application of combinatorial techniques to process sequence integration in order to arrive at globally optimal sequence of LED manufacturing operations by considering interaction effects between unit manufacturing operations, process conditions, hardware details, and materials characteristics of components utilized. The MOCVD system provides improved system and methods that provide capability to vary GaN growth conditions and/or deposition of device layers (e.g. n- and p-type doped GaN layers, multi-quantum well layers, and other layers such as electron blocking layer) within single MOCVD run. The variations can be accomplished by changing local deposition environment in system with multiple wafers processed per run, such that several groups of wafers receive individual processing conditions for layers of interest. In this way run-to-run variation is removed and number of cycles per unit time increases because multiple experiments are conducted in parallel. The combinatorial MOCVD system is constructed to allow both global conditions for all wafers in run and allow isolated conditions for groups of wafers for selected layers in device. The conventionally performed MOCVD is expensive and time consuming. The ability to perform multiple local variations per MOCVD run provides increase in productivity for MOCVD system compared with traditional non-combinatorial MOCVD systems. In addition, due to removal of run-to-run variability and need to do many repeat baseline runs within multi-run experiment, productivity is increased another 1.5-2 times. Total productivity enhancement is estimated to be 15-20 times when compared to conventionally performed MOCVD. By using system combinatorial MOCVD can be performed such that whole substrates or groups of substrates are processed within isolated environments or only one condition per each substrate area is varied, so that within wafer stress effects due to compositional changes in film are avoided in deposited films and devices.    DETAILED DESCRIPTION - A metal-organic chemical vapor deposition (MOCVD) system (400) comprises: chamber, substrate (402) support system, and gas emission system; where substrate support system comprises several substrate support planets (404) operable to support greater than or equal to 1 substrate, substrate support planets are disposed in plane and are equidistant from central axis of substrate support system, where central axis is perpendicular to plane; gas-emission system comprises gas-emitting fixture (410) disposed at central axis of substrate support system, is operable to radially emit several gases from gas-emitting fixture at equal total flow rates (414) across substrate support planets, and is operable to provide several isolated environments suitable for depositing uniform layers on substrates; substrate support system and gas emission system are contained within chamber; and system is operable to vary greater than or equal to 1 process parameter in each isolated environment. The MOCVD system is operable to provide different process parameters for depositing greater than or equal to 1 layer of differing composition or thickness on substrates in different isolated environments; and is operable to provide common process parameters to all substrates for depositing greater than or equal to 1 layer on all substrates. The process parameters comprise temperature, gas composition, processing time, and/or precursor flow rates. The system further comprises temperature control system for each substrate support planet operable to control temperature for each substrate disposed on it. The substrate support system further comprises transport system comprising mechanism for rotating each substrate support planet and mechanism for revolving substrate support planets about central axis of substrate support, where revolving can be stopped to position substrates within isolated environments. The transport system is capable of advancing substrate support planet or substrate on them to desired isolated environment, and holding it in that environment for desired length of time. The gas-emitting fixture is capable of emitting same or different gases into each isolated environment, where when gas-emitting fixture emits different gases into each isolated environment, each substrate support planet is positioned within isolated environment. The system further comprises metrology station for each isolated environment. An INDEPENDENT CLAIM is included for method for forming layers involving: depositing first layer having first set of layer parameters on several substrates using MOCVD using first set of process parameters, and depositing second layer having second set of layer parameters on several substrates using MOCVD using second set of process parameters; where at least one of layers is deposited in isolated environment, and layers are uniform across substrate of several substrates.    DESCRIPTION OF DRAWING(S) - The figure shows schematic diagram of the high throughput MOCVD system in universal mode.    Planetary combinatorial MOCVD system (400)    Substrate (402)    Substrate support/planet (404)    Central fixture (410)    periphery of system (430)    Uniform flows of gas precursor (414)