NOVELTY - The method involves preparing seed crystal (4) with main surface (4b) whose center portion is located in side surface of other main surface (4a) into which semiconductor melt (3) is poured. A casting mold (2) with inner peripheral side surface (2c) is located between opening (2a) and bottom surface. The seed crystal is positioned on the bottom surface of the casting mold. The semiconductor melt is injected toward the center of main surface of seed crystal and is solidified in casting mold. A site in alignment with peripheral portion of main-surface side is protruded.    USE - Manufacturing method of semiconductor ingot for generating solar cell element.    ADVANTAGE - The silicon ingot can generate the solar cell element with enhanced photoelectric conversion efficiency. The manufacturing process of the semiconductor ingot can be simplified. The manufacturing cost of the seed crystal and the ingot can be reduced. The usage of mold release material can be reduced. High-quality semiconductor ingot with few impurities can be manufactured efficiently and effectively.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the method involves positioning seed crystal on plate-shaped object. Heat conductivity of plate-shaped object is set different from seed crystal in bottom surface of casting mold. Several plate-shaped objects with heat conductivity smaller than preset plate-shaped object are prepared. Preset plate-shaped object is positioned in center of bottom surface of casting mold so that center of main surface of the seed crystal is contacted. Several plate-shaped objects are positioned around preset plate-shaped object so that peripheral portion (4d) of main-surface side of the seed crystal is contacted. The center portion of bottom surface of casting mold is cooled so that temperature of center portion of bottom surface of casting mold is set low than the peripheral portion. A holder (5) supporting the casting mold is positioned on the outer surface site corresponding to center of bottom surface so that temperature is set lower than circumference of the outer surface site. The site facing outer surface site of casting mold is made of material with heat conductivity larger than circumference of site of holder.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the manufacturing method of the semiconductor ingot.    Casting mold (2)    Opening (2a)    Inner peripheral side surface (2c)    Semiconductor melt (3)    Seed crystal (4)    Main surfaces (4a,4b)    Peripheral portion (4d)    Holder (5)