NOVELTY - A silicon tetrachloride and zinc are reacted in a reactor (20) and polycrystalline silicon is produced in the reactor. Then, silicon tetrachloride and zinc are supplied in an amount such that silicon tetrachloride is supplied in reactor. The reactor is maintained at 800 degrees C or more and inert gas atmosphere is provided inside the reactor. The obtained polycrystalline silicon is taken out from the reactor by moving polycrystalline silicon to the cooling space (45) of the inert gas atmosphere leading to the reactor and cooled, to obtain polycrystalline silicon.    USE - Manufacture of polycrystalline silicon used for solar cells.    ADVANTAGE - The polycrystalline silicon is manufactured with high productivity, and polycrystalline silicon is taken out from the reactor by easy and economical method.    DETAILED DESCRIPTION - A silicon tetrachloride and zinc are reacted in a reactor and polycrystalline silicon is produced in the reactor. Then, silicon tetrachloride and zinc are supplied in an amount such that silicon tetrachloride is supplied in reactor at 907-1200 degrees C, or zinc and silicon tetrachloride are supplied to make molar ratio of zinc with respect to silicon tetrachloride is smaller. The reactor is maintained at 800 degrees C or more and inert gas atmosphere is provided inside the reactor. The obtained polycrystalline silicon is taken out from the reactor by moving polycrystalline silicon to the cooling space of the inert gas atmosphere leading to the reactor and cooled, to obtain polycrystalline silicon. An INDEPENDENT CLAIM is included for manufacturing apparatus (50) of polycrystalline silicon. The manufacturing apparatus has supply pipe (7) of silicon tetrachloride vapor (9), and supply pipe (8) of zinc vapor to upper portion, and discharge pipe (6) of exhaust gas (11) in the lower portion. In bottom side of the reactor silicon tetrachloride and zinc reacts within reactor, and produces polycrystalline silicon. The reactor has cooling unit (44) forming cooling space of inert gas atmosphere. Between the reactor and the cooling unit, silicon tetrachloride and zinc are reacted within reactor such that the gas in the reactor does not leak to cooling unit. After performing reaction of silicon tetrachloride and zinc, the obtained polycrystalline silicon is moved to cooling space out of reactor through a structure.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of manufacturing apparatus of polycrystalline silicon.    Silicon carbide rod (3)    Discharge pipe (6)    Supply pipe of silicon tetrachloride vapor (7)    Supply pipe of zinc vapor (8)    Silicon tetrachloride vapor (9)    Zinc vapor (10)    Exhaust gas (11)    Division component of supply space of silicon tetrachloride vapor (13)    Division component of supply space of zinc vapor (14)    Reactor (20)    Side wall (31)    Cooling unit (44)    Cooling space (45)    Manufacturing apparatus (50)    Partition wall of supply space of silicon tetrachloride vapor (131)    Supply space of silicon tetrachloride vapor (132)