NOVELTY - The method involves applying an aluminum-containing layer (5) on a surface of a semiconductor structure in a contact region i.e. cell contact region, of a surface. Aluminum is alloyed from the aluminum-containing layer into the semiconductor structure by thermal effect for forming a p-doped region (4), which is formed as a dopant by aluminum, in the semiconductor structure at the contact region. The aluminum-containing layer in the contact region is partially removed by an acid etching agent. The contact region is electrochemically metalized with metal, which is not aluminum.    USE - Method for producing a metallic contact structure e.g. n-contact structure and p-contact structure i.e. contact grid, on a surface of a semiconductor structure e.g. photovoltaic solar cell, and preliminary stage in a manufacturing process of a photovoltaic solar cell (all claimed), which is used for converting incident electromagnetic radiation into electrical energy.    ADVANTAGE - The aluminum is alloyed from the aluminum-containing layer into the semiconductor structure by the thermal effect for forming the p-doped region, which is formed as the dopant by the aluminum, in the semiconductor structure at the contact region, thus avoiding contamination of a spatial loading zone. The method satisfies requirements for providing the contact region, which is suitable for soldering connections. The contact region is electrochemically metalized with metal, which is not aluminum, thus easily applying an electrochemical metallization process. The method reduces a required amount of silver during manufacturing the metallic contact structure, thus reducing cost for producing the metallic contact structure, and increasing an efficiency of the solar cell.    DETAILED DESCRIPTION - The acid etching agent contains hydrochloric acid, sodium hydroxide, and sodium trichloride. An INDEPENDENT CLAIM is also included for a photovoltaic solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a photovoltaic solar cell.    Silicon wafer (1)    N-doped emitter (2)    Antireflection layer (3)    P-doped region (4)    Aluminum-containing layer (5)