NOVELTY - The method involves supplying a gas mixture with hydrogen-based gas, silicon-based gas and carbon and oxygen containing gas, where the mixture includes volumetric flow ratio of the hydrogen-based gas to the silicon-based gas between about 5 and about 15 and volumetric flow ratio of the carbon and oxygen containing gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between of about 10 percent and 50 percent. Process pressure of the mixture within the processing chamber is maintained, while forming a doped p-type amorphous silicon containing layer (122).    USE - Method for forming a doped p-type amorphous silicon containing layer on a substrate e.g. glass substrate, polymer substrate and metal substrate, for thin film single/multiple junction solar cell devices.    ADVANTAGE - The method enables improving light absorption by enhancing light trapping, substrate and thin films formed over by wet, plasma, ion and mechanical processes. The method enables p-i-n layers of a p-i-n junction provided for a solar cell with improved efficiency and with reduced cost of producing the solar cell. The method enables reduction in affect of shunt type defects to improve the solar cell's device performance. The method enables plasma treatment process to improve electrical properties at an interface when surface defects can be removed or eliminated during the treatment process. The method enables increased amount of solar radiation to be absorbed through intrinsic layers, thus improving cell efficiency. The method enables improving film transparency, conductivity and stability of electric devices by controlling film properties of a p-type doped silicon containing layer such as carbon doped p-type silicon oxide layer, formed in the solar cell devices. The method enables fabricating high stability p-i-n solar cells with high fill factor, high short circuit current, high open circuit voltage and better device stability.    DETAILED DESCRIPTION - An INDEPENDENT CALIM is also included for a thin film solar cell structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a thin film solar cell device oriented toward light or solar radiation.    Multi-junction solar cell (100)    Solar radiation (101)    Substrate (102)    Transparent conducting oxide layers (110, 140)    Doped p-type amorphous silicon containing layer (122)    Intrinsic type amorphous silicon containing layer (124)    N-type microcrystalline silicon containing layer (126)    P-type microcrystalline silicon containing layer (132)    Intrinsic type microcrystalline silicon containing layer (134)    N-type amorphous silicon containing layer (136)    Metal back layer (150)