TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The layers (c), (d) and (e) are chosen in their compositions with the proviso that the lattice constant of one of the layers (d), (e) and/or the side of the layer (c) facing away from the layer (a) or (b) corresponds to the lattice constant of the layer (f). The layer (a) on the side facing towards the layer (b) or (c) is a silicon surface of a silicon monocrystal. The layer (b) has a thickness of 20-100 nm, and/or a p- or n-doping concentration of 1x 1015-1x 1021 cm-3. The amount of antimony and indium in the layer (c) on the side facing towards the layer (a) or (b) is less than the amount of antimony and indium on the side, which is facing away from the layer (a) or (b), and passes through a maximum in the direction of a space coordinate, which is orthogonal to the main surfaces of the layer (c). The layer (c) is made of multiple of partial layers, preferably 2-10 layers, where the amount of antimony and indium is variable or constant within the partial layer. The layer (c) has a thickness of 1-500 nm, preferably 100-400 nm, and/or optionally exhibits a p- or n-doping concentration of 1x 1015-1x 1021 cm-3. The layer (d) has a thickness of 1-150 nm, and/or an undoped and/or a p- or n-doping concentration of 1x 1015-1x 1021 cm-3. The layer (d) is epitaxially formed of a single or multiple layers having 1-10 layers, or is epitaxially formed on the layer (c), optionally on the layer (d) and/or (e), or is epitaxially formed on the layer (c), the layer (d), (e), or the layer (f). The reactants for forming the layers comprises: 1-5C trialkylgallium, preferably triethylgallium, tritertiarybutylgallium and/or trimethylgallium as gallium-reactant; diborane or 1-5C trialkylborane, preferably tritertiarybutyl borane and triethylborane and/or borane-amine-adducts e.g. dimethylaminoborane as boron-reactant; alan-amine-adducts or 1-5C trialkylaluminum, preferably trimethylaluminum, tritertiarybutylaluminum and/or dimethylethylaminealane as aluminum-reactant; 1-5C trialkylindium preferably trimethylindium as indium-reactant; phosphine and/or 1-5C alkyl phosphine, preferably tertiarybutylphosphine as phosphorus reactant; arsine, 1-5C alkylarsine, and/or trimethylarsine, preferably tertiarybutylarsine as arsine reactant; 1-5C trialkyl antimony, preferably triethyl antimony and/or trimethylantimony as antimony reactant; and ammonia, 1-8C mono-alkylhydrazine, preferably tertiarybutylhydrazine and/or 1-5C 1,1-di-alkylhydrazine, preferably 1,1-dimethylhydrazine as nitrogen reactant, where 3-5C alkyl groups are optionally branched, and the reactants for doping the layers comprises diethyltellurium, dimethylzinc, diethylzinc, ditertiarybutyl silane, silane, ditertiarybutyl sulfide, bis-cyclopentadienyl-magnesium, or tetrabromomethane.Preferred Method: The method comprises (i) introducing a substrate comprising the layer (a) into an epitaxy-apparatus, preferably a metalorganic vapor phase epitaxy-apparatus, (ii) loading a carrier gas with reactants in a defined concentrations relative to the predetermined composition of the layers (a), (b), (c), (d) and (e), optionally (f), or their partial layers, (iii) heating the loaded carrier gas over the surface at 300-800 degrees C, preferably 400-625 degrees C in case of layers (c) and (d) or their partial layers or at 525-725 degrees C in case of the layer (e) or its partial layers, and (iv) passing the substrate or the surface of the uppermost layer on the substrate for a defined exposure duration, where the total concentration of the reactants and the duration of exposure are adjusted with each other according to the condition, that the semiconductor layer is formed epitaxially having a predetermined layer thickness on the surface of the substrate or the surface of the uppermost layer is formed on the substrate, where the epitaxial growth mode is carried out in a continuous manner by flow rate-modulation-epitaxy or by atomic layer deposition. The layer (c) is grown in partial layers, where heating of the substrate is carried out between the growth of two partial layers and/or after the growth of the last partial layer, at 550-750 degrees C, preferably 600-725 degrees C. The total pressure of the carrier gas and the reactants is adjusted at 10-1000 hPa, preferably 50-500 hPa, where the ratio of the sum of the partial pressures of the reactants to the partial pressure of the carrier gas is between 1.10E-6 to 0.5, and the deposition rate is 0.01-10 mu m/hour, preferably 0.05-5 m/hour. Preferred Definitions:    z, v = 1; either    x, y, t = 0; or    y, v = 1; either    x, z, t = 0; or    x = 0.01-0.1;    y = 0.90-0.99;    z, t = 0; either    v = 1; or    x = 0.01-0.1;    z = 0.90-0.99;    y, t = 0; either    v = 1; or    t = 0.01-0.1;    v = 0.90-0.99;    y, x = 0;    z = 1;    y = 1;    x, z, u = 0; either    v = 1 - w; or    x, z = 0;    y = 1+u; and    v+w = 1    EXAMPLE - No suitable example given.