NOVELTY - Preparation of buffer layer oxide target involves adding zinc oxide, magnesium oxide and tertiary oxide, adding zirconia balls, pure water and dispersant, mixing materials, grinding, obtaining slurry, pouring slurry into porous mold silver, drying, obtaining blank, heating blank, sintering, depositing secondary layer of copper-indium-gallium sulfide absorber layer, providing cadmium sulfide film, providing argon gas as working gas, controlling the throttle valve, and performing RF power source sputtering process.    USE - Preparation of buffer layer oxide target used for copper indium gallium selenide solar cell.    ADVANTAGE - The buffer layer oxide target is efficiently prepared with improved uniformity, durability, density, quality, performance and conversion efficiency.    DETAILED DESCRIPTION - Preparation of buffer layer oxide target involves adding 100 pts. wt. zinc oxide, 1-10 pts. wt. magnesium oxide and tertiary oxide, adding 68 pts. wt. zirconia balls, 30 pts. wt. pure water and 2 pts. wt. dispersant, mixing materials, grinding for 10-14 hours, obtaining slurry, pouring slurry into a porous mold silver, drying for 24 hours, obtaining blank, heating blank at 1350-1550 degrees C for 6 hours, sintering, forming a buffer layer for sputtering the oxide target embryo, cutting and polishing the surface of buffer layer into a silver oxide target, sputtering direct current power of primary layer with buffer oxide layer target having molybdenum film having thickness of 500 nm, depositing secondary layer of copper-indium-gallium sulfide absorber layer having thickness of 2000 nm, providing cadmium sulfide film having thickness of 100 nm by tertiary layer plating bath method, sputtering chamber evacuated to a background pressure of 0.7x 10-5 to 0.9x 10-5 torr in the vacuum pumping system, providing argon gas as working gas, controlling the throttle valve through the argon sputter working pressure chamber of 2x 10-3 torr, and performing RF power source sputtering process to power of 250 watts.