NOVELTY - An oxide sinter comprises zinc, titanium, oxygen, and additional trace element (TE) chosen from gallium and aluminum. The atomic ratio of titanium to total content of zinc, titanium and additional trace element is 0.02-0.1. The atomic ratio of trace element to total content of zinc, titanium and trace element is 0.005-0.06. The titanium is derived from titanium oxide having a crystal structure of titanium oxide single phase by X-ray diffraction, with weight changes by differential thermal-thermogravimetry simultaneous measurement of 5.5-20% by temperature rising up to 600 degrees C.    USE - Oxide sinter is used for target for forming zinc oxide-type transparent conductive film for transparent conductive substrate (all claimed). Uses include but are not limited to liquid crystal display element, plasma display, solar cell, transparent electromagnetic-wave-absorber, ultraviolet-ray absorber and transparent semiconductor device.    ADVANTAGE - The zinc oxide-type transparent conductive film has electroconductivity, low resistance and excellent durability.    DETAILED DESCRIPTION - An oxide sinter comprises zinc, titanium, oxygen, and additional trace element (TE) chosen from gallium and aluminum. The atomic ratio of titanium to total content of zinc, titanium and additional trace element is 0.02-0.1. The atomic ratio of additional trace element to total content of zinc, titanium and additional trace element is 0.005-0.06. The titanium is derived from titanium oxide having a crystal structure of titanium oxide single phase by X-ray diffraction, with weight changes by differential thermal-thermogravimetry simultaneous (TG-DTA) measurement of 5.5-20% by temperature rising up to 600 degrees C, weight changes by differential thermal-thermogravimetry simultaneous (TG-DTA) measurement of 16.5-51% by temperature rising up to 800 degrees C, molar ratio of oxygen and titanium by electron-probe-microanalyzer (EPMA) measurement of 0.012-0.5 and atomic ratio of oxygen and titanium by scanning-type analytical-electron microscope (SEM-EDX) measurement of 0.004-0.165. INDEPENDENT CLAIMS are included for the following:    (1) manufacture of oxide sinter;    (2) target;    (3) formation of zinc oxide-type transparent conductive film; and    (4) transparent conductive substrate.