NOVELTY - The apparatus comprises a chamber installed inside a substrate, a unit to supply a reaction gas to the chamber, an energy source to form crystalline nanoparticles to dissociate the reaction gas, and a substrate blocking unit adapted to block heat emitted from the energy source and the reaction gas and openably and closably installed inside the substrate, where the operation of opening and closing the substrate is performed so that the time of the substrate cut-out delay when the thin film is deposited in the substrate. The substrate blocking unit is a plate in which chamber is divided.    USE - The apparatus for manufacturing a thin film (claimed), which is useful in a thin film transistor and a solar cell.    ADVANTAGE - The apparatus ensures efficient and economic manufacture of the high definition thin film with high resistivity and increased deposition rate and degree of crystallinity, and can suppress the formation of the noncrystalline substance in depositing the thin film.    DETAILED DESCRIPTION - The apparatus comprises a chamber installed inside a substrate, a unit to supply a reaction gas to the chamber, an energy source that forms crystalline nanoparticles to dissociate some of the reaction gas, and a substrate blocking unit adapted to block heat emitted from the energy source and the reaction gas and openably and closably installed inside the substrate, where the operation of opening and closing the substrate is performed so that the time of the substrate cut-out delays when the thin film is deposited in the substrate. The substrate blocking unit is a plate in which chamber is divided. The substrate blocking unit comprises a cut-out main body for blocking an upper side of the substrate, and a rotary shaft for opening and closing the substrate and rotated about the substrate. The blocking portion is integrally formed with the cut-out main body on the side of the substrate. The cut-out main body is a plane plate and a domed plate. The gas supply unit provides a first reaction gas including an element of the thin film formed in the substrate and a second reaction gas for suppressing the formation of noncrystalline substance on the substrate. The apparatus further comprises a first vacuum pump to act on one part of the chamber divided with plate, and a second vacuum pump to act on the chamber when the plate is removed. The energy source comprises a heating wire apparatus installed between the gas supply unit and the substrate. A bias confirmation part is connected to the substrate and forms the electric field in the substrate. The time of cut-out is 5 minutes when the thin film deposition is delayed in the substrate.