TECHNOLOGY FOCUS - ELECTRONICS - Preferred Components: The LED is a semipolar LED grown on a bulk gallium nitride substrate (100) or semipolar gallium nitride. The LED further comprises an active region (106) for emitting the light, where the active region comprises at least one quantum well having a thickness of at least 4 nm. The LED is grown on a semipolar plane of the gallium nitride and the semipolar plane is (20-2-1). The active region comprises one quantum well or a single quantum well (SQW). A peak wavelength of the light is in a blue spectrum or wavelength range, where the wavelength shift of the peak wavelength is less than 4 nm up to a current density of 400 A/cm2. A top surface area of the LED, or a top surface of the light emitting active region of the LED, is less than 0.2 mm2. The output power is more than 140 mW at the current density of 100 A/cm2 or more than 460 mW at the current density of 400 A/cm2. The EQE drop is less than 9% when the current density is changed from 100-400 A/cm2. The III-nitride based semipolar LED has a crystal quality, active region thickness, semipolar orientation, and structure so that the light output power is at least 100 mW, or the EQE is at least 50%, at the current density of at least 100 A/cm2. The structure increases carrier uniformity, the active region thickness reduces the carrier density, and the semipolar orientation of the LED increases the crystal quality so that the output power or the EQE is obtained. The structure includes: a number of quantum wells in the active region; and a superlattice between the substrate and an active region of the LED, where the superlattice has a number of periods and composition so that the light output power is at least 100 mW, or the EQE is at least 50%, for the current density of at least 100 A/cm2. The LED further comprises: a gallium nitride substrate; an n-type gallium nitride layer overlying a semipolar plane of the gallium nitride substrate; the superlattice comprising an indium gallium nitride/gallium nitride superlattice overlying the n-type gallium nitride layer; the active region including an indium gallium nitride/gallium nitride single quantum well overlying the indium gallium nitride/gallium nitride superlattice; an aluminum gallium nitride electron blocking layer overlying the single quantum well; a p-type gallium nitride layer (110) overlying the electron blocking layer (108); a transparent conductive contact layer overlying the p-type gallium nitride layer; and metal contact to the n-type gallium nitride layer. Preferred Method: The fabricating comprises growing the LED under growth conditions and with a crystal quality, active region thickness, semipolar orientation, and structure, where the III-nitride based semipolar LED has a light output power of at least 100 mW, or EQE of at least 50%, for a current density of at least 100 A/cm2. EXAMPLE - No suitable example given.