NOVELTY - The manufacture method involves patterning a wafer using a cap etch photoresist. The wafer has a substrate (5) with grown semiconductor light detection device epitaxial layers (45). The cap region in the exposed areas on the top region of the epitaxial layers is then etched according to a cap etch pattern. An anti-reflection coating (11) is then applied over the epitaxial layers without removing the cap etch photoresist. The cap etch photoresist is removed using a lift-off procedure to expose the contact areas of the cap etch pattern and to lift the anti-reflection coating.    USE - Semiconductor light detection device manufacture method for making high-power solar cells and photodetectors. Can be used in making semiconductor light detection devices (claimed) or semiconductor light sensitive devices such as high-powered and high-efficiency solar cells.    ADVANTAGE - Provides an improved method of patterning anti-reflection coatings on solar cells, particularly multi-junction solar cells, to accommodate epitaxial contact regions with minimum loss. Determines the shadowing loss by the width of the metal grids even in the case of misalignment. Forms a self-aligned anti-reflection coating that provides electrical insulation, and that also acts as a physical barrier between the particles.    DETAILED DESCRIPTION - The wafer is patterned with the cap etch photoresist in the cap etch pattern using photolithography, in which the cap etch pattern define the contact areas. The cap etch photoresist is removed to expose the contact areas and to lift off the anti-reflection coating only over the contact areas in order to align patterns of the cap region and the anti-reflection coating, thus providing a self-aligning cap etch section. An INDEPENDENT CLAIM is also included for the semiconductor light detection device.    DESCRIPTION OF DRAWING(S) - The drawing is a sectional view showing a process step in making a semiconductor light detection device.    Patterned cap (3)    Substrate (5)    Anti-reflection coating (11)    Semiconductor light detection device epitaxial layers (45)    Backside metal (52)