NOVELTY - Silicon nanocrystal ink (P1) comprises partially halide-terminated nanocrystals of silicon or its alloy in an organic solvent to form a colloidal dispersion of the silicon nanocrystals.    USE - The silicon nanocrystal ink is useful for making silicon nanocrystal film which is useful in semiconductor device comprising solar cell, transistor, photodetector or LED (all claimed).    ADVANTAGE - The silicon nanocrystal ink: provides silicon nanocrystal film having an area of at least 9 cm2 that exhibits no cracks observable by scanning electron microscopy, atomic force microscopy, or optical microscopy; provides robust film for optoelectronic device integration (to render the film air stable or enhance optoelectronic properties). The nanocrystals are free of oxides and/or organic ligands and surfactants.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a silicon nanocrystal ink (P2) comprising at least 1x 10-5 volume fraction of non-agglomerated nanocrystals of silicon or its alloy in an organic solvent to form a colloidal dispersion of the nanocrystals, where the nanocrystals are free of organic ligands and surfactants;    (2) preparing a silicon nanocrystal ink comprising combining partially halide-terminated nanocrystals of silicon or its alloy with organic solvent under conditions to form colloidal dispersion of the silicon nanocrystals;    (3) a silicon nanocrystal film (F1) having an area of at least 9 cm2 that exhibits no cracks observable by scanning electron microscope, atomic force microscopy, or optical microscopy, where the nanocrystals comprise silicon or its alloy are free of organic ligands and surfactants;    (4) a silicon nanocrystal film (F2) comprising partially halide-terminated nanocrystals of silicon or its alloy;    (5) making (M1) a silicon nanocrystal film comprising solution coating a silicon nanocrystal ink;    (6) preparing an amine-terminated silicon nanocrystal film comprising: providing a silicon nanocrystal film; and contacting an amine with the nanocrystal film under conditions to replace at least a portion of the halides and form an amine-terminated nanocrystal film of silicon or its alloy;    (7) preparing an alkyl-terminated silicon nanocrystal film comprising: providing a silicon nanocrystal film; and contacting an alkyl Grignard reagent with the nanocrystal film under conditions to replace at least a portion of the halides and form an alkyl-terminated nanocrystal film of silicon or its alloy;    (8) preparing an oxygen-terminated silicon nanocrystal film comprising: providing a silicon nanocrystal film; and contacting an oxidizing agent with the nanocrystal film under conditions to replace at least a portion of the halides and form an oxygen-terminated nanocrystal film of silicon or its alloy.