TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step (a) is accomplished using the process (P1) including laser ablation, a chemical etching process, an electrochemical process, track etching, micro- or nano-lithography, contact lithography, X-ray-beam lithography, electron-beam lithography, ion-beam lithography, photo-lithography, nanoimprint lithography or chemical self-assembly. The method of fabricating a nanostructure further comprises depositing at least one additional material to form a layered nano structure. The step (b) further comprises depositing the material directly along the nano-pit to form the nanostructure. The step (b1) further comprises depositing at least one anode material directly on the nano-pitted anode substrate and/or the step (b2) further comprises depositing at least one cathode material directly on the nano-pitted cathode substrate. The step of depositing the anode material and/or the step of depositing the cathode material, and the step (b) are accomplished by sputter-coating, chemical vapor deposition or pulsed laser method, where the sputter-coating is direct current sputter-coating, radio frequency sputter-coating, magnetron sputter-coating or reactive sputter-coating. The method of constructing a nanobattery further comprises forming the anode substrate and/or the cathode substrate using the process (P1). In the method of fabricating a nano-pitted substrate: the predetermined amount of polishing time is 5 minutes; the predetermined amount of oxidation time is 1 hour; the first predetermined voltage is 40 V; the predetermined step-down rate is 2 V/minute; the second predetermined voltage is 2 V; and the predetermined temperature is 4 degrees C. The method of fabricating a nano-pitted substrate further comprises: chemically polishing a metal thin film in phosphoric acid for 5 minutes; oxidizing the metal thin film with an oxalic acid electrolyte solution in an electrochemical cell at 4 degrees C at 40 V and for 1 hour; decreasing the 40 V at a step-down rate of 2 V/minute to 2 V; and etching the oxidized metal thin film with phosphoric acid to form the nano-pitted substrate. Preferred Components: The conductive substrate: includes many nano-pits, where the nano-pit has a diameter of 1 nm-10 mu m; and is constructed of conductive materials consisting of a metal, metal alloy, electrolyte, superconductor, semiconductor, plasma, graphite or conductive polymer. The anode substrate and/or the cathode substrate is constructed of a metal, metal alloy, electrolyte, superconductor, semiconductor, plasma, graphite or conductive polymer. The metal is aluminum, antimony, bismuth, boron, cadmium, carbon, cerium, chromium, cobalt, copper, dysprosium, erbium, europium, gadolinium, germanium, gold, graphite, hafnium, holmium, indium, iridium, iron, lanthanum, lutetium, magnesium, manganese, molybdenum, neodymium, nickel, niobium, palladium, platinum, praseodymium, rhenium, ruthenium, samarium, selenium, scandium, silver, silicon, tantalum, terbium, thulium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zirconium or zinc. The metal alloy is aluminum copper, aluminum chromium, aluminum magnesium, aluminum silicon, aluminum silver, cerium gadolinium, cerium samarium, chromium silicon, cobalt chromium, cobalt iron, cobalt iron boron, copper cobalt, copper gallium, copper indium, copper nickel, copper zirconium, hafnium iron, iron boron, iron carbon, iron manganese, iridium manganese, iridium rhenium, indium tin, molybdenum silicon, nickel aluminum, nickel chromium, nickel chromium silicon, nickel iron, nickel niobium titanium, nickel titanium, nickel vanadium, samarium cobalt, silver copper, silver tin, tantalum aluminum, terbium dysprosium iron, terbium iron alloy, titanium aluminum, titanium nickel, titanium chromium, tungsten rhenium, tungsten titanium, zirconium aluminum, zirconium iron, zirconium nickel, zirconium niobium, zirconium titanium, zirconium yttrium, zinc aluminum or zinc magnesium. The material deposited in step (b) is: an oxide, polymeric, ceramic, mineral or metallic material; and carbon, silicon, graphite, copper oxide, metal alloy, mixed metal oxide, lithium-containing oxide, phosphate, fluorophosphate, silicate, tin oxide, zinc oxide, titanium oxide, titanium dioxide, vanadium pentoxide, magnesium oxide, silicon dioxide, nichrome or hydroxyapatite. The material deposited in step (b) further comprises metal oxides (Q1) comprising tin oxide, lithium cobalt oxide, zinc oxide, copper oxide, titanium oxide, titanium dioxide, vanadium pentoxide, magnesium oxide, silicon dioxide, nichrome, lithium titanate spinel oxide, lithium nickel carbonyl manganese oxide of formula (LiNixCO1-2xMnO2), lithium nickel manganese oxide (LiNi0.5Mn1.5O4), lithium nickel cobalt aluminum oxide (Li(Ni0.8Co0.15Al0.05)O2), lithium manganate, iron olivine (lithium iron phosphate), lithium iron magnesium phosphate of formula (LiFe1-xMgPO4), lithium molybdenum phosphate, lithium cobalt phosphate, lithium nickel phosphate, lithium vanadium phosphate, lithium vanadyl phosphate, lithium pyrophosphates of formula (LiMP2O7), lithium iron pyrophosphate (LiFe1.5P2O7), lithium vanadium fluorophosphates (LiVPO4F or Li5V(PO4)2F2), lithium aluminum fluorophosphate, lithium chromium fluorophosphate (Li5Cr(PO4)2F2), lithium cobalt fluorophosphate, lithium nickel fluorophosphate, lithium iron silicate, lithium manganese silicate or lithium vanadyl monosilicate.x, M = not defined.The first acid and/or the second acid is phosphoric acid. The acidic solution is an oxalic acid electrolyte solution. The anode material and/or the cathode material is conductive materials consisting of an oxide, polymeric, ceramic, mineral or metallic material. The anode material: is carbon, silicon, graphite, mixed metal oxide, hydroxyapatite, nichrome or graphite; and further comprises tin oxide, zinc oxide, copper oxide, titanium oxide, titanium dioxide, vanadium pentoxide, magnesium oxide or silicon dioxide. The cathode material: is carbon, silicon, graphite, a copper oxide, graphite, a lithium-containing oxide, a phosphate, a fluorophosphate, a silicate, tin oxide, zinc oxide, titanium oxide, titanium dioxide, vanadium pentoxide, magnesium oxide, silicon dioxide, nichrome or hydroxyapatite; and further comprises metal oxides (Q1). EXAMPLE - Nanostructured films of tin oxide were deposited directly on nano-pitted aluminum substrates, by radio frequency magnetron sputtering from a tin oxide target in an argon atmosphere, utilizing a Cressington 208 (RTM: Sputter coater) with a power source. The pits in the aluminum substrate were 200 nm in diameter and 150 nm deep. Sputtering was performed at room temperature under 0.01 mbar of argon pressure, with a spacing of 7 cm between the target and the sample. The tin oxide columns had been deposited by sputtering so that their height from the surface was 300-400 nm. Deposition by sputtering more material made the columns taller providing more surface area. Thus the nanostructured electrode was obtained in which tin oxide was directly in contact with the aluminum current collector.