NOVELTY - The method involves setting (S101) several temperature zones. The thicknesses and refractive indexes of antireflection films on surfaces of deposited silicon wafers are acquired (S102) in temperature zones. The heating rates for current to-be-deposited silicon wafers are adjusted (S103) in corresponding temperature zones according to acquired thicknesses and acquired refractive indexes of antireflection films on the surfaces of deposited silicon wafers in temperature zones. The antireflection films are formed (S104) on the surfaces of to-be-deposited silicon wafers.    USE - Method for adjusting thicknesses and refractive indexes of antireflection film used for manufacturing solar battery sheet.    ADVANTAGE - By adjusting the heating rates for current to-be-deposited silicon wafers in corresponding temperature zones, the refractive indexes of the antireflection films can be reduced while the thicknesses of the antireflection films can be increased or the refractive indexes of the antireflection films can be increased while the thicknesses of the antireflection films can be reduced. The limitation caused in the procedure for adjusting the uniformity of antireflection films can be prevented. The uniformity of the thicknesses and the uniformity of the refractive indexes of the formed antireflection films can be guaranteed, and the quality of solar battery sheet can be improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for adjusting thicknesses and refractive indexes of antireflection film. (Drawing includes non-English language text)    Step for setting several temperature zones (S101)    Step for acquiring thicknesses and refractive indexes of antireflection films on surfaces of deposited silicon wafers in temperature zones (S102)    Step for adjusting heating rates for current to-be-deposited silicon wafers in corresponding temperature zones (S103)    Step for forming antireflection films on surfaces of to-be-deposited silicon wafers (S104)