NOVELTY - Monolithic integrated semiconductor structure comprises a layer structure including (a) a carrier layer based on doped or undoped silicon, (b) optionally a layer having the composition (I), (c) a relaxation layer with the composition (II), (d) optionally a layer with the composition (III) for blocking incorrect dislocations, (e) optionally a layer of hetero-offset having the composition (IV), and (f) an arbitrary, preferably Group III/V semiconductor material or a combination of different arbitrary semiconductor materials.    USE - The semiconductor structure is useful for manufacturing a III/V channel transistor or different III/V-based components e.g. lasers, a light emitting diode, a detector and a solar cell on a silicon substrate (claimed).    ADVANTAGE - The structure ensures improved performance of the integrated circuits.    DETAILED DESCRIPTION - Monolithic integrated semiconductor structure comprises a layer structure including (a) a carrier layer based on doped or undoped silicon, (b) optionally a layer having the composition (BxAlyGazNtPv1) (I), (c) a relaxation layer having the composition (BxAlyGazInuPvSbw) (II), where the amount of elements (antimony and indium) on the side facing towards the layer (a) or (b) is less, equal, or greater than the amount of the elements on the side facing away from the layer (a) or (b) and is different or constant within the relaxation layer, (d) optionally a layer having the composition (BxAlyGazInuPvSbwNt) (III) for blocking incorrect dislocations, (e) optionally a layer of hetero-offset having the composition (BxAlyGazInuPvSbwNtAsr) (IV), and (f) an arbitrary, preferably Group III/V semiconductor material, or a combination of multiple different arbitrary semiconductor materials, where the sum of all the Group-III elements of the above mentioned stoichiometric subscripts is 1, and the sum of all the Group-V elements is also 1.    Either y, z, u, w, t, a, v, m, r = 0-1; or    y = 1-u-x-z; or    t = 0;    l, v1 = 0.9-1; either    v, w = 0-1; or    v = 1-w; and    x = 0-0.1.    INDEPENDENT CLAIMS are also included for:    (1) p- or n-doping at least one layer including (a), (b), (c), (d), (e), and/or (f); and    (2) the semiconductor structure obtainable by the above mentioned method.