NOVELTY - Process-I for purifying silicon comprises (1) obtaining a silicon fiber, ribbon or microplate in which one of its dimension is less than 75 microns in size, (2) oxidizing the fiber, ribbon or microplate to provide a silicon dioxide skin, (3) annealing the silicon dioxide coated fiber, ribbon or microplate, and (4) etching the silicon dioxide skin and optionally repeating the steps (2)-(4) as per above se.    USE - The process-I is useful for purifying silicon, which is useful in electronic device, optical device (e.g. optical fiber), solar cell (all claimed) and in radar detectors, where the process is useful for producing all grades of silicon including solar grade or electronic grade.    ADVANTAGE - The process continuously and rapidly purifies the silicon with high surface area thus providing the multicrystalline silicon materials with valuable commercial properties and improved dimensions in an economical manner by improving the processing of the silicon fibers with less mechanical strain.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a continuous process for the purification of silicon comprising passing the silicon fiber or ribbon into an oxidation zone to provide the silicon dioxide skin on it, passing the coated silicon fiber or ribbon into an annealing zone in which the silicon is heated such that impurities in it migrate to the silicon dioxide coating, passing the annealed silicon fiber or ribbon to a cooling zone, and passing the cooled fiber or ribbon to an etching zone where the silicon dioxide coat is removed;    (2) a purified silicon fiber, ribbon or microplate made by the process;    (3) a process for pulling the silicon fiber (e.g. a silicon fiber for purification), comprising heating a cylindrical composition comprising a silicon core such as a silicon rod, an interface layer of a metal oxide, nitride and/or sulfide longitudinally surrounding the core, a glass sheath longitudinally surrounding the interface layer, and pulling the silicon fiber from the core once the silicon melts; and    (4) the cylindrical composition of matter longitudinally surrounded by the interface layer, which is in turn longitudinally surrounded by a glass sheath.