NOVELTY - Manufacture of light-trapping synergetic antireflection structure involves preparing etching solution by mixing 3 wt.%/wt.% sodium hydroxide with 8 volume%/volume% isopropanol in volume ratio 25:2, etching a cone shape on the surface of processed monocrystalline silicon wafer by the prepared etching solution, using high-resolution magnetic control ion sputtering device for plating the resultant etched cone with silver, annealing the resultant silver-plated cone under nitrogen atmosphere, cooling, and forming a layer of discontinuous silver nanoparticles on the surface of the cone.    USE - Manufacture of light-trapping synergetic antireflection structure used for silicon thin-film solar cell.    ADVANTAGE - The method efficiently provides light-trapping synergetic antireflection structure having excellent antireflection effect, by a simple process. The silicon thin-film solar cell is efficiently obtained using the light-trapping synergetic antireflection structure.    DETAILED DESCRIPTION - Manufacture of light-trapping synergetic antireflection structure involves preparing etching solution by mixing 3 wt.%/wt.% sodium hydroxide with 8 volume%/volume% isopropanol in volume ratio 25:2, etching a cone shape on the surface of processed monocrystalline silicon wafer by the prepared etching solution at 80 degrees C for 30-50 minutes, using high-resolution magnetic control ion sputtering device for plating the resultant etched cone with silver under sputtering current of 15-50 mA for 15-30 seconds, annealing the resultant silver-plated cone under protection of nitrogen atmosphere at 350-400 degrees C for 2-3 hours, cooling naturally, and forming a layer of discontinuous silver nanoparticles having particle diameter of 40-100 nm, on the surface of the cone. The processed monocrystalline silicon wafer is prepared by soaking monocrystalline silicon wafer having resistivity of 8-13 Omega ?cm in acetone solution, ultrasonically treating in water bath at 35 degrees C for 10-20 minutes, washing with deionized water, ultrasonically treating for 10-15 minutes, discharging the resultant sample, soaking the discharged sample in CP4A cleaning liquid at normal temperature for 3-5 minutes, soaking in 14 wt.%/wt.% hydrofluoric acid solution for 2-3 minutes, washing the resultant sample with deionized water, and drying under nitrogen atmosphere in a dryer. The CP4A cleaning liquid is a mixture of 40 wt.%/wt.% hydrofluoric acid, acetic acid, 65-68 wt.%/wt.% nitric acid, and ultra-pure water in volume ratio of 3:5:3:22.