NOVELTY - The method involves performing process of depositing silicon oxide on a collector (S1) by chemical vapor deposition method such that an active material layer containing the silicon oxide is formed on the collector. Lithium of quantity with which irreversible capacity of the active material layer is compensated is provided to the active material layer (S2) by gaseous-phase method. The active material layer is heat-processed in inert gas atmosphere of 280 to 400 degree Celsius (S3) after providing the lithium to the active material layer.    USE - Method for manufacturing an electrode for a high capacity lithium ion secondary battery that is utilized for supplying power to a portable terminal e.g. portable information terminal and portable electronic device, a domestic-use small electric power storage apparatus, and a vehicle such as two-wheeled motor vehicle, electric vehicle and hybrid electric vehicle.    ADVANTAGE - The method enables heat-processing the active material layer in the inert gas atmosphere of 280 to 400 degree Celsius such that lithium is reliably spread in the active material layer and irreversible capacity is compensated, so that the electrode manufactured can exhibit discharge capacity equivalent to theoretical capacity, thus raising energy density of the battery. The method enables completion of the heat treatment process in comparatively short time, so that adhesion strength of the active material layer and the collector is improved with heat processing in inert gas atmosphere and need of managing the pressure of atmosphere exactly is avoided, thus making heat processing in inert gas atmosphere excellent in productivity and workability.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for manufacturing an electrode.'(Drawing includes non-English language text)'    Step for performing process of depositing active material on collector (S1)    Step for providing lithium of quantity with which irreversible capacity of active material layer is compensated to active material layer (S2)    Step for heat-processing active material layer in inert gas atmosphere of 280 to 400 degree Celsius (S3)