TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The method further comprises: applying again the second solution to the substrate; drying the substrate; dipping the substrate in the solution in methanol of a compound that promotes sintering; washing the substrate with isopropyl alcohol; drying the substrate with nitrogen and heating the substrate; repeating the steps until the desired thickness of the film is achieved; utilizing an air brush for applying the second solution to the substrate, where the first solution is present at 40 mg/ml solution; applying a third solution to the substrate; drying the substrate; dipping the substrate in a methanol solution of a compound that promotes sintering; washing the substrate with isopropyl alcohol; and drying the substrate with nitrogen and heating the substrate and forming a second film on the substrate. In the method the first solution is diluted and forms the second solution which has a concentration lower than the first and 1-10 mg/ml. The second solution is applied: to the substrate that is vertically mounted at 20-100 degrees C; and via airbrush with a pressure of 10-40 psi nitrogen as the carrier gas. The method comprises drying substrate, followed by applying the second solution to substrate for 2 minutes at 150 degrees C, where the solution of the compound that promotes sintering in methanol is at 60 degrees C. The step of heating is performed at 400 degrees C for 1 minute. The method comprises drying, dipping and washing the substrate, drying and heating the substrate, after two or more cycles of applying the second solution to a substrate, where the film is 500 nm in thickness. Preferred Components: The compound that promotes sintering is one of cadmium halide, a chloride containing salt and a chloride containing compound, preferably trimethylsilyl chloride or ammonium chloride. The third solution is a solution formulated to form a heterostructure. The layer of metal comprises a noble metal or gold, platinum or silver. The layer of transparent conductor is carbon nanotubes, metal nanowires, combustion synthesized indium-tin oxide or conductive polymer. EXAMPLE - 40 mg/ml Concentrated stock solution of cadmium telluride or cadmium selenide nanocrystals, previously subjected to overnight ligand exchange with pyridine was diluted in trichloromethane to a concentration of 1 mg/ml. The resulting solution was applied to a vertically mounted 80 degrees C substrate via airbrush with a steady pressure of 20 psi nitrogen as the carrier gas. When one quarter solution was applied, the sample was removed, dried for 2 minutes at 150 degrees C, and dipped in saturated solution of cadmium chloride in methanol held at 60 degrees C. The resulting substrate was immediately washed two times with fresh isopropyl alcohol, blown dried with nitrogen and placed on 400 degrees C hot plate in air for 1 minute. The sample was remounted and the one quarter solution was applied following same protocol. After performing four cycles, the resulting film of 500 mm thickness was obtained.