TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method (M1): the pressure within the chamber is less than 1asterisk10-6 Ton; the electromagnetic heating source is radio frequency heating; the electromagnetic heating source is microwave heating; the first susceptor is made with material capable of absorbing electromagnetic waves (radio frequency and Microwaves) from the electromagnetic heating source; and the first susceptor is made with material transparent to electromagnetic wave from the electromagnetic heating source. The method (M1) further comprises: placing the substrate with one side residing on first susceptor; placing the metals or the semi-metals in an open boat or crucible; and placing the open boat or crucible on a second susceptor, where a second electromagnetic heating source is further used for heating the second susceptor. In the method (M1): the first susceptor is coated with material capable of absorbing electromagnetic waves (radio frequency and microwaves) from the electromagnetic heating source; the second susceptor is made with material capable of absorbing electromagnetic waves (radio frequency and microwaves) from the second electromagnetic heating source; the open boat or crucible is coated with material capable of absorbing electromagnetic waves (radio frequency and Microwaves) from the second electromagnetic heating source; and the open boat or crucible is heated with the second electromagnetic heating source using radio frequency and microwaves. In the method (M1): copper, indium, gallium, selenium, copper-indium, copper-gallium, and copper-indium-gallium are deposited to the substrate simultaneously to achieve copper-poor CIGS composition; copper, indium, gallium, selenium, copper-indium, copper-gallium, and copper-indium-gallium are deposited to the substrate separately to achieve copper-poor CIGS composition; and electromagnetic heating source(s) heats the substrate to a temperature of 300-800 degrees C. In the method (M2): sodium is introduced as a dopant for CIGS on the substrate during physical vapor deposition; the selenium source is in a gaseous state and is introduced to the substrate via tubing and/or a carrier gas; the tubing is further comprised of a valve which controls the flow of the selenium source; and nitrogen or argon gas is further introduced via the tubing as a carrier gas. In the method (M3): copper, indium and gallium are in copper-indium-gallium alloy powder form before the copper, indium and gallium is heated by the first heating source; the first heating source is an electrical heating source; the first heating source is a second electromagnetic heating source providing radio frequency and microwaves; and the second electromagnetic heating source originates from the first electromagnetic heating source. Preferred Components: In the method (M1): the substrate comprises multiple layers; at least one of the multiple layers is made with material capable of absorbing electromagnetic waves (radio frequency and Microwaves) from the electromagnetic heating source; the multiple layers includes a barrier layer and a back contact layer; the substrate is positioned to the material source at a distance of 1 mm to 30 cm; and the substrate is positioned to the electromagnetic heating source at an optimal distance. In the method (M1), the material source (504) comprises elements and/or compounds comprising copper, indium, gallium, selenium, copper-indium alloy, copper-gallium alloy or copper indium and gallium alloy, to achieve copper-poor CIGS composition. In the method (M4), the target compound is cadmium sulfide, zinc sulfide, indium selenide, indium sulfide or zinc oxide.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: In the apparatus (A1): the electromagnetic heating source heats the substrate at 300-800 degrees C; the substrate is positioned within a susceptor; the susceptor is made with material capable of absorbing electromagnetic waves (radio frequency and microwaves) from the electromagnetic heating source; the susceptor is made of silicon carbide, or silicon carbon nitride; the susceptor is made with material transparent to electromagnetic waves (radio frequency and microwaves) from the electromagnetic heating source; and the elements for deposition onto the substrate is placed in an open boat or a crucible. In the apparatus (A1): a second electromagnetic heating source is provided, where an open boat or a crucible is placed on a susceptor and the susceptor is heated by the second electromagnetic heating source using radio frequency and microwaves to a temperature of 50-2000 degrees C; the susceptor is made of material capable of absorbing electromagnetic waves (radio frequency and microwaves) from the second electromagnetic heating source; the elements for deposition onto the substrate is carried into the chamber via a tubing and a carrier gas; and the carrier gas comprises nitrogen, argon, neon or helium. In the apparatus (A2): many elements for crystallization onto the substrate is carried into the chamber via a tubing and a carrier gas; many elements and gaseous materials for crystallization onto the substrate is transported into the chamber via a tubing and a carrier gas; the apparatus further comprises a second enclosure inside the chamber, where the second enclosure comprises a heating source to heat the second enclosure, where a first portion of the elements is heated to gaseous state and thus transported by a carrier gas to the substrate for crystallization; the elements are transported to the substrate for crystallization via a first tubing; the second portion of the gaseous materials is transported to the substrate for crystallization via a second tubing and a carrier gas; the elements comprises copper, indium and gallium elements; the copper, indium and gallium elements are in elemental form or in the form of copper-indium-gallium alloy powder, or copper gallium alloy, copper indium powder and/or any other powder; heating source is a second electromagnetic heating source; the tubing is coupled with a valve to control the transportation of the gaseous materials; and the carrier gas is nitrogen, helium, neon and argon. The electromagnetic heating source is fixed frequency electromagnetic heating or variable frequency electromagnetic heating. The electromagnetic heating source is capable of heating many elements and/or compounds to a temperature of 50-2000 degrees C. The elements and/or compounds comprises copper, indium, gallium, selenium, copper-indium, copper-gallium, copper-indium-gallium, indium gallium selenide, copper selenide (Cu2-xSe) and/or copper indium gallium selenide. EXAMPLE - No suitable example given.