NOVELTY - The method involves forming photoresist layer comprising fluorinated photoresist material on device substrate, exposing the photoresist layer to patterned radiation, contacting exposed photoresist layer with developing agent to remove portion of the exposed photoresist layer, treating the developed structure to form a treated structure, and contacting treated structure with stripping agent to remove the first pattern of photoresist.    USE - Method for patterning device including an organic thin film transistor, an organic solar cell, an organic LED, a bioelectronic sensor or an organic conductor-based touch sensor (claimed), touch screens, lighting and displays, e-readers and LCD displays.    ADVANTAGE - The method enables relatively simple recycling of the solvents from photolithographic processing waste stream, and hence manufacturing costs and environmental impact are reduced. The active organic materials are decomposed in the presence of UV light, and hence reduction of the energy permits the photopolymer to be exposed without causing significant photolytic damage to underlying active organic layers. The method is simple and cost-effective, as low-cost recycling apparatus permits on-site recycling and eliminates issues regarding shipping wastes from manufacturing sites. Reduced light exposure times improve manufacturing throughput of desired devices.    DETAILED DESCRIPTION - The method involves forming photoresist layer (2) comprising fluorinated photoresist material on device substrate, exposing the photoresist layer (4) to patterned radiation, contacting exposed photoresist layer with developing agent to remove portion of the exposed photoresist layer in accordance with the patterned radiation for forming developed structure (6) having first pattern of photoresist covering the substrate and complementary second pattern of uncovered substrate corresponding to the removed portion of photoresist, treating the developed structure (8) to form a treated structure, and contacting treated structure with stripping agent to remove the first pattern of photoresist (10). The developing agent comprises mixture of first and second fluorinated solvents, where at least one of the first and second solvent is hydrofluoroether. The stripping agent comprises at least the first or second solvent in concentrations different from that of the developing agent. An INDEPENDENT CLAIM is included for photoresist system.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating method for patterning device.    Forming photoresist layer (2)    Exposing photoresist layer (4)    Forming developed structure (6)    Treating developed structure (8)    Removing first pattern of photoresist (10)