NOVELTY - A solar cell (100) comprises gallium indium phosphorus (GaInP) layer (108); n-type gallium arsenide (GaAs) layer (110) in contact with it; p-type GaAs layer (112) in contact with n-type GaAs layer; second GaInP layer (116) in contact with p-type GaAs layer; second p-type GaAs layer (118) in contact with second GaInP layer; metallic positive electrical contact (120) in contact with p-type GaAs contact layer; and metallic negative electrical contact (122) in contact with first GaInP layer, where the positive and negative electrical contacts are exposed on same side of solar cell.    USE - For manufacturing solar cell (claimed) particularly III-V solar cell useful in e.g. a consumer device, such as a mobile telephone, a mobile gaming apparatus, a tablet computing device, or the like for generating electrical power for such a device.    ADVANTAGE - The solar cell improves efficiency and is relatively small in size. The cell has few shading effects, thus allowing more light to reach absorbing layers of the solar cell. The cell includes all back-side contacts, thus increasing ease in which the solar cell is packaged and interconnected with other solar cells in solar panel, e.g. connecting several of the cells may allow high voltages in small areas. The metal stack survives acid etches to release the cell from wafer, and the cell can be used by itself or stacked with other cells in unique configurations and small form factors. As both the positive and the negative contact pad are exposed on the back side of the solar cell, the conductive metals of the contact pads do not block light from reaching the absorbing layer of the solar cell. This arrangement enhances efficiency of conversion of solar radiation into electrical power over conventional III-V solar cell designs.    DETAILED DESCRIPTION - A solar cell (100), comprises: several layers of compound semiconductors comprising: a first gallium indium phosphorus (GaInP) layer (108); an n-type gallium arsenide (GaAs) layer (110) that is immediately above and in direct contact with the first GaInP layer; a p-type GaAs layer (112) that is immediately above and in direct contact with the n-type GaAs layer; a second GaInP layer (116) that is immediately above and in direct contact with the p-type GaAs layer; a second p-type GaAs layer (118) that is immediately above and in direct contact with the second GaInP layer; and a positive electrical contact (120), comprised of metal, that is in direct contact with the p-type GaAs contact layer; and a negative electrical contact (122), comprised of metal, that is in direct contact with the first GaInP layer, where the positive and negative electrical contacts are exposed on a same side of the solar cell. An INDEPENDENT CLAIM is included for method for manufacturing the solar cell involving growing a semiconductor stack that comprises the following layers i.e. first gallium indium phosphorus (GaInP) layer, n-type gallium arsenide (GaAs) layer, first p-type GaAs layer, second GaInP layer, second p-type GaAs layer, grown by way of epitaxy; adding a positive electrical contact, comprised of metal, in direct contact with the p-type GaAs contact layer; and adding a negative electrical contact, comprised of metal in direct contact with the first GaInP layer.    DESCRIPTION OF DRAWING(S) - The figure shows a cutaway view of solar cell.    Solar cell (100)    First gallium indium phosphorus (GaInP) layer (108)    N-type gallium arsenide (GaAs) layer (110)    First p-type GaAs layer (112)    Second GaInP layer (116)    Second p-type GaAs layer (118)    Positive electrical contact (120)    Negative electrical contact (122)