NOVELTY - The method involves forming a first silicon semiconductor layer (340). An amorphous silicon film is formed as a second silicon semiconductor layer over the first silicon semiconductor layer. Catalyst material promoting crystallization of silicon is added selectively to a region (350a) of the second layer. The region of the second silicon semiconductor layer is crystallized by a heat treatment. A third silicon semiconductor layer (360) is formed over the second silicon semiconductor layer. A stacked layer including the first, second and third semiconductor layers is divided at a region.    USE - Method for fabricating a photoelectric conversion device i.e. multi-junction tandem type thin film amorphous and crystal silicon based photoelectric conversion device such as solar cell, for power generation application. Can also be used as a triple type photoelectric conversion device.    ADVANTAGE - The method enables forming a light- transmitting conductive film between a conductive layer and the first semiconductor layer and locally performing crystallization for the second region of the second semiconductor layer with use of an excimer laser such that the region to which the catalyst material is added and crystallized in advance, is subjected to the laser irradiation and roughness can be formed over the light-transmitting conductive film, so that crystallinity can be preferably improved or contribution of the region to the photoelectric conversion can be improved while giving a light-trapping effect.    DETAILED DESCRIPTION - The catalyst material is selected from a group consisting f iron, cobolt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum, copper and gold.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating a method for fabricating a multi-junction photoelectric conversion device.    Substrate (300)    Silicon semiconductor layers (340, 360, 540, 550)    Regions of silicon semiconductor layer (350a, 350b)    Light- transmitting conductive film (380)    Interlayer (400)