TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The semiconductor nanocrystal is Ag, Au, Ru, Rh, Pt, Pd, Os, Ir, Ni, Cu, CdS, Pt-tipped, TiO2, Mn/ZnO, ZnO, CdSe, SiO2, ZrO2, SnO2, WO3, MoO3, CeO2, ZnS, WS2, MoS2, SiC, GaP and/or Cu-Au. The photocatalytic capping agent is chalcogenides, zintl ions, transition metals, lanthanides, actinides, tetrasulfides and tetraselenides of vanadium, niobium, tantalum, molybdenum, tungsten, rhenium, tetratellurides of niobium, tantalum, tungsten, the monometallic and polymetallic polysulfides and/or polyselenides. The first inorganic capping agent is a reduction photocataylst, and the second inorganic capping agent is an oxidative photocatalyst. The first semiconductor nanocrystal forms a core (preferably cubic core), and the second semiconductor nanocrystal forms a shell around the core having hexagonal crystal structures extending outwardly from the cubic core. The first semiconductor nanocrystal forms a carbon nanotube where the first inorganic capping agent is ZnS. The second semiconductor nanocrystal forms graphene foliates where the second inorganic capping agent is TiO2. The first and second semiconductor nanocrystal form a nanorod where the first semiconductor nanocrystal comprises one ZnS region and the capping agent ReO2, the second semiconductor nanocrystal comprises two Cu regions and the capping agent W2O3, and the second semiconductor nanocrystal forms at end points of the nanorod. The porous substrate is glass frits, fiberglass cloth, alumina or silicon. The polar solvent is water. The configuration varies based on changing a reaction time, changing reaction temperature profile, changing a structure of the organic capping agents, a chemistry of the organic and inorganic capping agents, or adding more semiconductor nanocrystal precursor. Preferred Method: The step (a) is performed by a colloidal route, a high-temperature and high-pressure autoclave-based method, a high temperature solid state reaction or a template-assisted synthetic method. (C1) is deposited on a porous substrate by plating, chemical synthesis in solution, chemical vapor deposition (CVD), spin coating, plasma enhanced chemical vapor deposition (PECVD), laser ablation, thermal evaporation, molecular beam epitaxy, electron beam evaporation, pulsed laser deposition (PLD), sputtering, reactive sputtering, or atomic layer deposition.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The organic solvent is stabilizing organic ligand, trioctylphosphine oxide, long-chain aliphatic amines, long-chain aliphatic phosphines, long-chain aliphatic carboxylic acids, and/or long-chain aliphatic phosphonic acids; tertiary-Butanol, pentane, pentanes, cyclopentane, hexane, hexanes, cyclohexane, heptane, octane, isooctane, nonane, decane, dodecane, hexadecane, benzene, 2,2,4-trimethylpentane, toluene, petroleum ether, ethyl acetate, diisopropyl ether, diethyl ether, carbon tetrachloride, carbon disulfide, alcohol, hexadecylamine (HDA) and/or hydrocarbon solvents at high temperatures. The polar solvent is 1,3-butanediol, acetonitrile, ammonia, benzonitrile, butanol, dimethylacetamide, dimethylamine, dimethylethylenediamine, dimethylformamide, dimethylsulfoxide (DMSO), dioxane, ethanol, ethanolamine, ethylenediamine, ethyleneglycol, formamide (FA), glycerol, methanol, methoxyethanol, methylamine, methylformamide, methylpyrrolidinone, pyridine, tetramethylethylenediamine, triethylamine, trimethylamine and/or trimethylethylenediamine. EXAMPLE - No suitable example is given.