NOVELTY - The method comprises: forming a conductive via (410) into a semiconductor wafer (404); removing a portion of the semiconductor wafer so the conductive via extends above a surface of the semiconductor wafer; forming a first insulating layer including a first material composition over the surface of the semiconductor wafer and the conductive via; forming a second insulating layer including a second material composition over the first insulating layer; and removing a portion of the second insulating layer and a portion of the first insulating layer to expose the conductive via.    USE - The method is useful for making a semiconductor device (claimed) including microcontroller, microprocessor, charged-coupled device, solar cell and digital micro-mirror device that is useful in: electronic devices including cellular phones, personal digital assistants, digital video cameras and graphics card and network interface card inserted into computer; fields of entertainment, communications, power conversion, networks, computers and consumer products; and military applications, aviation, automotive, industrial controllers and office equipment.    ADVANTAGE - The method is capable of efficiently making the semiconductor device with reduced size, less power consumption, high performance and smaller footprint.    DETAILED DESCRIPTION - The method comprises: forming a conductive via (410) into a semiconductor wafer (404); removing a portion of the semiconductor wafer so the conductive via extends above a surface of the semiconductor wafer; forming a first insulating layer including a first material composition over the surface of the semiconductor wafer and the conductive via; forming a second insulating layer including a second material composition over the first insulating layer; removing a portion of the second insulating layer and a portion of the first insulating layer to expose the conductive via, while detecting a difference between the first material composition and second material composition; and completely removing the second insulating layer. The step of detecting the difference between the first material composition and second material composition is carried out using an optical detection process or a motor current detection process. The method further comprises providing a substrate including the first and second insulating layers formed over the substrate.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of packages.    Semiconductor wafer (404)    Conductive via (410)    Insulating layer (412)    Dielectric or insulating layer. (414)