NOVELTY - The apparatus comprises: a silicon material input part provided with a silicon material from the outside; a silicon melting part for forming a silicon molten metal; a crucible heating portion for heating a double furnace to melt the silicon; a transfer substrate arranged at a lower part of a silicon melt sprue for transferring the molten silicon; a thin plate formation part for cooling the transferred molten silicon and forming a silicon laminate; a surface heating portion for heating a surface of the molten silicon discharged through an outlet; and a gas jet part.    USE - The apparatus is useful for manufacturing a silicon substrate (claimed) that is used in a solar cell.    ADVANTAGE - The apparatus manufactures the silicon substrate with reduced surface roughness, and improved energy conversion efficiency.    DETAILED DESCRIPTION - The apparatus comprises: a silicon material input part provided with a silicon material from the outside; a silicon melting part for forming a silicon molten metal; a crucible heating portion for heating a double furnace to melt the silicon; a transfer substrate arranged at a lower part of a silicon melt sprue for transferring the molten silicon; a thin plate formation part for cooling the transferred molten silicon and forming a silicon laminate; a surface heating portion for heating a surface of the molten silicon discharged through an outlet; a gas jet part arranged adjacent to the surface heating portion and blowing a high pressure gas on the surface of the molten silicon; and a storage heating portion for heating the silicon molten metal stored in the silicon melt sprue using a heater, an induction coil, and a plasma electron-beam apparatus. The surface heating portion heats the molten silicon with the temperature more than a silicon melting point using plasma heating, induction heating or resistance heating method. The gas jet part sprays the high pressure gas in the surface of the molten silicon, where high pressure gas is hydrogen gas, nitrogen gas or hydrogen. The apparatus further comprises a silicon molten metal heating portion that controls the solidification rate of silicon molten metal. The heater or the induction coil surrounds the silicon melt sprue and indirectly heats the silicon melt sprue. A pre-heating zone is arranged at a lower part of the transfer substrate to heats the transfer substrate. The transfer substrate coagulates the silicon melt while transferring the silicon melt. An inactive gas is emitted into the silicon melt surface using a post-baking process. An INDEPENDENT CLAIM is included for a method for manufacturing a silicon substrate.