NOVELTY - Producing printable, high-viscous oxide medium with a viscosity of greater than 500 mPas in the form of doping medium, comprises carrying out anhydrous sol-gel-based synthesis by condensation of alkoxysilanes and/or alkoxyalkylsilanes with (a) symmetric and asymmetric carboxylic acid anhydrides in the presence of boron-containing compounds and/or phosphorus-containing compounds and/or (b) with strong carboxylic acids in the presence of boron-containing compounds and/or phosphorus-containing compounds, and producing pasty, viscous doping medium (dopant pastes) by controlled gelation.    USE - The oxide medium is useful (i) as a doping medium for the processing of silicon wafers for photovoltaic, microelectronic, micromechanical and micro-optical applications, (ii) for producing passivated emitter- and rear cell structure-, passivated emitter with rear locally diffused-, passivated emitter, rear totally diffused-, interdigitated back contact solar cells, and (iii) for producing a handle- and abrasion-resistant layer on silicon wafers, where (a) the solar cells comprises additional architectural features, preferably metal wrap through, emitter-wrap-through, selective emitter, selective front surface field, selective back surface field or bifaciality, (b) the oxide medium, which is printed on the surface of the silicon wafer, is dried at a temperature of 50-950 degrees C, preferably 50-400 degrees C with at least one sequential annealing step (annealing by means of a step function) and/or an annealing-platform, and compressed for glazing to obtain a grip- and abrasion-resistant layer with a thickness of up to 500 nm (all claimed).    ADVANTAGE - The method uses capping agent comprising acetoxytrialkylsilane, alkoxytrialkylsilane, halotrialkylsilane and/or derivatives for improving the stability of the oxide medium (claimed). The oxide medium produces products with improved durability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) the oxide medium, which is produced by the above mentioned method, comprising binary or ternary system comprising silcion dioxide-phosphorus pentoxide, silicone dioxide-boron trioxide and silicone disoxide-phosphorus pentoxide-boron trioxide and/or mixtures of higher level, which is produced using alkoxides/esters, hydroxides or oxides of aluminum, gallium, germanium, zinc, tin, titanium, zirconium, arsenic or lead during production; and    (2) using the oxide medium as the doping medium for the processing of silicon wafers for photovoltaic, microelectronic, micromechanical and micro-optical applications.