NOVELTY - Composition comprises: a quantum dot-functionalized metal oxide, comprising a quantum dot including a I-III-VI semiconductor, and/or a I-II-IV-VI semiconductor; a metal oxide; and a linker binding the quantum dot to the metal oxide, where the linker comprises a first functional group (F1) capable of binding to the quantum dot and many second functional groups (F2) capable of binding to the metal oxide. The linker is substituted hydrocarbyl compounds (I).    USE - The composition is useful in a device comprising a photoanode, solar cell, LED, photosensor, nanostructured electronic array, thin-film display, battery, fuel cell, electrolytic cell, or field-effect transistor (claimed).    ADVANTAGE - The composition utilizes linkers which increases binding of quantum dots to a metal oxide as compared to direct binding, thus increasing absorbance of the quantum dot-functionalized metal oxide at a given photon energy.    DETAILED DESCRIPTION - Composition comprises: a quantum dot-functionalized metal oxide, comprising a quantum dot including a I-III-VI semiconductor, and/or a I-II-IV-VI semiconductor; a metal oxide; and a linker binding the quantum dot to the metal oxide, where the linker comprises a first functional group (F1) capable of binding to the quantum dot and many second functional groups (F2) capable of binding to the metal oxide. The linker is substituted hydrocarbyl compounds of formula (I).    F1 = -NH2, -SH, -S- (all preferred), -COOH, -COO-, -PO3H2, -PO3H-, -B(OH)2, -BO2H-, -SO3H, or -SO3-;    A1 = aryl, heteroaryl, aliphatic, or heteroaliphatic, preferably phenyl or lower alkyl; and    F2 = -PO3H2, -PO3H-, -B(OH)2, -BO2H-, -SO3H, or -SO3- (when z is greater than or equal to 1) or -COOH, -COO-, -PO3H2, -PO3H-, -B(OH)2, -BO2H-, -SO3H or -SO3- (when z is greater than or equal to 2), where (F2)z is oxysilane moiety comprising z lower alkoxy groups bound to silicon.    An INDEPENDENT CLAIM is also included for a making a quantum dot-functionalized metal oxide, comprising exposing a metal oxide to a linker comprising the first functional group (F1) capable of binding to a quantum dot and second functional groups (F2) capable of binding to the metal oxide, thus producing a linker-functionalized metal oxide, and exposing the linker-functionalized metal oxide to a quantum dot comprising a I-III-VI semiconductor, and/or a I-II-IV-VI semiconductor, thus producing a quantum dot-functionalized metal oxide.