TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The method further comprises: exposing the inorganic material of the bottom layer to a fluorine containing plasma to form an inorganic layer containing elements of the inorganic material and fluorine as the first layer, a fluorine and silane containing plasma to form an inorganic layer containing elements of the inorganic material, silicon, carbon, and fluorine as the first layer, or to a fluorine containing plasma with a titanium containing precursor to form an inorganic layer containing elements of the inorganic material, and titanium, carbon, and fluorine as the first layer; and forming at least one second alternating-layer stack on the first alternating-layer stack, where the second alternating-layer stack includes a second hydrophobic first layer and a second inorganic hydrophilic second layer. The step (a) comprises adsorbing a metal-organic precursor layer on a substrate (522) using atomic layer deposition, and exposing the metal-organic precursor layer to a radical species from a plasma that converts a surface portion of the metal-organic precursor layer to the inorganic compound of the first layer. The step (b) comprises depositing a polymer, a plasma polymer, or a polymer of aluminum, oxygen, carbon, and fluorine on the bottom layer, and exposing the bottom layer to tridecafluoro-1,1,2,2-tetrahydrooctylmethylbis(dimethylamino)silane, and causing the deposited tridecafluoro-1,1,2,2-tetrahydrooctylmethylbis(dimethylamino)silane to react with trimethylaluminum in the bottom layer to form an aluminum-silicon-oxygen-carbon-fluorine polymer as the first layer on the bottom layer. The method for forming the inorganic hydrophilic second layer comprises exposing the first layer to a metal-organic precursor, molecules of which are adsorbed on the first layer, and exposing the adsorbed metal-organic molecules to radicals of a plasma to convert the adsorbed metal-organic molecules to an inorganic layer. The method for providing the bottom layer comprises exposing a substrate to a metal-organic precursor, purging physisorbed metal-organic precursor from the substrate by injecting an inert gas onto the substrate, exposing metal-organic molecules remaining on the substrate after the purging to radicals generated from a plasma, and providing an organic precursor to the metal-organic molecules remaining on the substrate and exposed to the radicals. Preferred Components: The hydrophobic first layer has a thickness of 1-100 Angstrom . The inorganic hydrophilic second layer has a thickness of 1-5 Angstrom . The bottom layer is aluminum oxide, zirconium dioxide, hafnium oxide, silicon dioxide and/or titanium dioxide. The hydrophobic first layer is a polymer. The second layer has a thickness equal to a molecular diameter of a water molecule. The hydrophobic first layer is an organic aluminum-oxygen-carbon-fluorine compound or inorganic aluminum-oxygen-fluorine compound. The hydrophobic first layer is fabricated comprising exposing the bottom layer to a fluorine-containing plasma to convert a surface of the bottom layer to the inorganic aluminum-oxygen-fluorine compound of the hydrophobic first layer. The first layer is formed by exposing a substrate to glycidylmethacrylate to deposit a layer of glycidylmethacrylate, and exposing the deposited layer of glycidylmethacrylate to an dinitrogen monoxide plasma to convert the deposited layer to poly(glycidylmethacrylate). The encapsulation material further comprises at least one second alternating-layer stack on the first alternating-layer stack.    TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Components: The device further comprises a second alternating-layer stack arranged on the first alternating-layer stack, where the second alternating-layer stack includes a second hydrophobic first layer and a second inorganic hydrophilic second layer.