NOVELTY - A solar thin film battery sheet assembly producing method involves preparing thin film layer by forming molybdenum film layer on a substrate, followed by depositing molybdenum layer on the surface of the substrate. The molybdenum layer is deposited, followed by forming molybdenum layer film on the substrate, forming P-type thin film battery P-N junction part, carrying out electron beam evaporation of film material to prepare copper-indium-gallium-selenium layer to form a P-type thin film battery P-N junction, and preparing cadmium sulfide or zinc sulfide film layer.    USE - Method for producing solar thin film battery sheet assembly.    ADVANTAGE - The method enables producing solar thin film battery sheet assembly with improved efficiency.    DETAILED DESCRIPTION - A solar thin film battery sheet assembly producing method involves preparing thin film layer by forming molybdenum film layer on a substrate, followed by depositing molybdenum layer with 0.2-0.5 mu m on the surface of the substrate at air pressure of 1.5x 10-1 Pa under action of bonding force. The 0.8 -l mu m molybdenum layer is deposited at air pressure of 1.0x 10-2 Pa, followed by forming molybdenum layer film on the substrate, forming P-type thin film battery P-N junction part at atmosphere of 10-1, carrying out electron beam evaporation of film material to prepare copper-indium-gallium-selenium layer to form a P-type thin film battery P-N junction, carrying out electron beam evaporation at 1.5x 10-3 Pa and 150-200 degrees C, preparing cadmium sulfide or zinc sulfide film layer with thickness of 0.05 mu m to form a N-type thin film battery P-N junction, forming intrinsic zinc oxide film with thickness of 0.05 mu m by evaporating the film material at 150-200 degrees C and 1.5x 10-3 Pa, The film material is evaporated corresponding ion source at 150-200 degrees C and 1.5x 10-3 Pa to prepare aluminum-doped film layer with thickness of 0.15 mu m. The film material is evaporated using electron beams at 150-200 degrees C and 1.5x 10-3 Pa corresponding ion source to obtain magnesium fluoride antireflection layer with thickness of 0.1-1.5 mu m, preparing guiding flow layer of nickel and aluminum thin film thickness as antireflection layer and electrode, forming a scribe line small battery sheet, combining PVB glue film and the backplate substrate with thin film battery component. The PVB glue film is placed on thin film substrate and back-plate substrate, followed by removing excess PVB glue film, filling thin film cell component into high pressure kettle and solidifying to obtain finished product. An INDEPENDENT CLAIM is also included for a solar energy thin film battery assembly production device.