NOVELTY - The method involves forming a sputter target by hot pressing bulk barium copper sulfur fluoride (BCSF) or hot pressing copper sulfide, barium sulfide and barium fluoride powders in stoichiometric proportions. A BCSF thin film is sputtered from the sputter target onto a plastic substrate e.g. polyethersulfone substrate, polyethylene terephthalate substrate and polyimide substrate, where the BCSF thin film is soaked in water for 30 seconds and heated at temperature of 80 degree Celsius for 30 seconds after sputtering the BCSF thin film.    USE - Method for making a BCSF transparent conductive thin film of a p-type charge carrier (claimed). Uses include but are not limited to multijunction solar cells, transparent electronics, low operating voltage LEDs, high-efficiency solar cells, electro-magnetic interference (EMI) shielding applications, wearable computers, lightweight displays, higher-efficiency emissive displays and large-area displays.    ADVANTAGE - The method enables placing precursors within vitreous carbon crucible, so that reactants are isolated from a quartz ampoule, which prevents contamination with oxides from the ampoule. The method enables providing two-step baking schedule, which results in negligible amounts of residual unreacted precursors so as to eliminate a need for pressing material into pellets before baking or sulfurdizing the material under flowing hydrogen sulfide, thus lowering processing cost. The method enables providing the BCSF transparent conductive thin film that possesses higher conductivity and better environmental stability than organic transparent conductive thin films.    DETAILED DESCRIPTION - The thin film is doped with potassium, rubidium, sodium, barium or strontium, copper, sulfur, selenium, tellurium and fluoride. An INDEPENDENT CLAIM is also included for a p-type charge carrier.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph representing relationship between intensity and temperature for x-ray diffraction (XRD) data for undoped BCSF.