NOVELTY - An amorphous semiconductor has composition (I) containing specified cations, specified anions and specified additives, in specified stoichiometric amount.    USE - Amorphous semiconductor is used for manufacture of electronic device e.g. thin-film transistor (all claimed) and photovoltaic cells. Uses include but are not limited to channel layer for thin-film transistor and field-effect transistor, absorber for thin-film solar cells, pixel switches and derivers for active-matrix, liquid crystal displays, light-emitting displays, electrophoretic displays, analog, digital and/or power electronics for macroelectronics, radio-frequency identification tags, and switches for integrated circuits fabricated near back-end of integrated circuit process.    ADVANTAGE - The semiconductor has high performance, improved electron mobility and alignment of neighbor atom, and reduces process timing.    DETAILED DESCRIPTION - An amorphous semiconductor has composition of formula: C1dC2eC3fA1lA2mA3nW1xW2 yW3z .    C=cation selected based on criteria for forming spherically symmetric 4s-, 5s- or 6s- derived conduction bands, substantially precluding crystallization, facilitating formation of an amorphous microstructure and/or providing a closed shell configuration;    A=anion selected based on criteria comprising suppressing crystallization, facilitating processability, providing bandgap and covalence and/or selecting anions to provide closed shell configuration;    W=different additives;and    d,e,f,l,m,n,x,y,z=relative stoichiometric amounts.    INDEPENDENT CLAIMS are included for the following:    (1) manufacture of amorphous semiconductor, which involves providing cation selected from zinc ion (Zn2+), gallium ion (Ga3+), indium ion (In3+), stannous ion, stannic ion, antimony ion (Sb3+, Sb5+) and bismuth ion (Bi3+, Bi5+), providing anion selected from phosphorus ion (P3-), arsenic ion (As3-), antimony ion (Sb3-), sulfur ion (S2-), selenium ion (Se2-), tellurium ion (Te2-) and bismuth ion (Bi3-), optionally providing additive chosen from magnesium ion, calcium ion, strontium ion, barium ion, boron ion, aluminum ion, scandium ion, yttrium ion, cerium ion (Ce2+, Ce3+), oxygen ion and/or fluoride ion, combining at least one cation, anion and additive to form a mixture, processing the mixture to form amorphous semiconductor; and    (2) manufacture of electronic device.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of Amorphous semiconductor used in manufacture of electronic device.