NOVELTY - The method involves introducing (S100) an inert gas in chamber after plasma processing, and performs a static elimination process. The gas which is mixture of nitrogen, oxygen and argon gases and whose ionization energy is lower than helium gas is introduced after the static elimination step. The pressure in the chamber is maintained to pressure higher than the pressure in the plasma processing, or the pressure in the static elimination step. A to-be-processed object is made to leave from electrostatic chuck by support pin after maintaining the high pressure.    USE - Method for controlling to-be-processed object such as semiconductor wafer to leave from electrostatic chuck (ESC). Can also be used for large substrate for flat panel display, electroluminescent element and substrate for solar cell.    ADVANTAGE - The pressure in the chamber is maintained to pressure higher than the pressure in the plasma processing, or the pressure in the static elimination step, so that the residual electric charge of electrostatic chuck surface layer can be reduced, and adsorption can be prevented. Thus the damage of wafer can be prevented by stopping the separation process of wafer when the residual electric charge of electrostatic chuck surface layer is not reduced to the predetermined value or less and the adsorption of the to-be-processed object by the residual electric charge of the surface layer of electrostatic chuck can be prevented.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a plasma processing apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the detachment control process. (Drawing includes non-English language text)    Step for introducing inert gas in chamber after plasma processing (S100)    Step for introducing high frequency electric power in chamber (S101)    Step for applying voltage after birth one from plasma (S102)    Step for performing etching process (S103)    Step for supplying process gas and stopping high frequency electric power after completion of process (S104)