NOVELTY - The plasma treating apparatus comprises a plasma treatment chamber (12) for treatment of a substrate using generated plasma (14), and a vacuum pump device (18) in fluid communication with the plasma treatment chamber via a gas outlet. The plasma treatment chamber includes a gas inlet, which opens for supplying a process gas. The vacuum pump device includes molecular nitrogen having pressure of 2-50 Pa. An inner surface of the plasma treatment chamber has normalized effective pumping speed of 2000, 3000, 4000, 5000 or 6000 m3/hour per square meter of inner surface of the treatment chamber.    USE - The plasma treating apparatus is useful for treating a substrate (claimed) that is useful in a solar cell, a display device and a semiconductor device.    ADVANTAGE - The plasma treatment apparatus treats the substrate in an energy efficient and rapid manner.    DETAILED DESCRIPTION - The plasma treating apparatus comprises a plasma treatment chamber (12) for treatment of a substrate using generated plasma (14), and a vacuum pump device (18) in fluid communication with the plasma treatment chamber via a gas outlet. The plasma treatment chamber includes a gas inlet, which opens for supplying a process gas. The vacuum pump device includes molecular nitrogen having pressure of 2-50 Pa. An inner surface of the plasma treatment chamber has normalized effective pumping speed of 2000, 3000, 4000, 5000 or 6000 m3/hour per square meter of inner surface of the treatment chamber. The effective pumping speed of the vacuum pump device includes aerodynamic conductance of all gas-carrying structures, which are located in downstream of the plasma treatment chamber and upstream of the vacuum pump device. The vacuum pump device has pumping speed more than 10% or 20% of deviating pumping speed. The plasma treatment chamber is fludically connected to the vacuum pump device using a connecting line, which has a flow cross section of more than 500 cm2, and is disposed within a vacuum chamber (11). The plasma treatment chamber is present in fluid communication with the vacuum chamber via a flow-through passage. A sum of the cross-sectional areas of the passages between the plasma treatment chamber and vacuum chamber is 500 cm2. The apparatus further comprises a plasma generating device comprising an excitation coil for inductive excitation within the plasma treatment chamber. The exciting coil is disposed outside the plasma processing chamber in its circumferential direction, and is aligned parallel to a substrate plane with its coil plane. A radio frequency transmission power of the plasma generating device is 5 kW, 7.5 kW or 10 kW per square inner surface of the plasma treatment chamber. An INDEPENDENT CLAIM is included for a method for treating substrate within a plasma processing chamber.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a plasma treatment device.    Vacuum chamber (11)    Plasma treatment chamber (12)    Plasma (14)    Vacuum pump device (18)    Root pump. (30)