NOVELTY - A Czochralski growth apparatus comprises: a crucible having at least one wall separating an inner growth zone and an outer feed zone, the wall having at least one opening providing restricted fluid communication between the inner growth zone and the outer feed zone; a solid feedstock delivery system comprising a feeder having a delivery point overhanging the outer feed zone of the crucible and delivering solid feedstock comprising silicon in it; and at least one particle blocking device substantially preventing the solid feedstock from entering the inner growth zone of the crucible.    USE - The Czochralski growth apparatus is useful for growing silicon ingot (claimed) for use in fabricating materials for integrated circuits and photovoltaic solar cells.    ADVANTAGE - The apparatus efficiently prepares silicon ingots having good overall properties, and minimizes or eliminates effects caused by replenishing the crucible while the ingot is pulled.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included:    (1) a method of Czochralski growth of a silicon ingot which involves: (i) providing a crucible in a Czochralski growth apparatus having at least one wall separating an inner growth zone and an outer feed zone, the wall having at least one opening providing restricted fluid communication between the inner growth zone and the outer feed zone; (ii) providing a solid precharge comprising silicon into the inner growth zone and the outer feed zone of the crucible; (iii) melting the solid precharge in the inner growth zone and in the outer feed zone; (iv) initiating growth of the silicon ingot from the inner growth zone; (v) delivering solid feedstock comprising silicon from a silicon delivery system into the outer feed zone while growing the silicon ingot, the silicon delivery system comprising a feeder having a delivery point overhanging the outer feed zone of the crucible and delivering solid silicon in it; and (vi) removing the silicon ingot from the Czochralski growth apparatus; where the Czochralski growth apparatus comprises at least one particle blocking device substantially preventing the solid silicon from entering the inner growth zone of the crucible; and    (2) a silicon ingot grown using the latter method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a Czochralski growth apparatus.    Czochralski growth apparatus (100)    Crucible (110)    Wall (111)    Inner growth zone (112)    Outer feed zone (113)    Heater (114)    Melt (115)    Thermally-insulated shield (116)    Solid feedstock delivery system (117)    Feeder (118)    Delivery point (119)    Gap (120)