NOVELTY - A semiconductor particle is manufactured by positioning substrate (10) and target (11) in parallel in reactive gas atmosphere, maintaining temperature of substrate and temperature of target so that etching rate of target by plasma (P) may become larger than that of substrate top, performing atmospheric pressure plasma-enhanced chemical transport which deposits constituent of target on substrate by making discharge occur between substrate and target in which discharge occurs by using high frequency electric power (4) of ultrashort wave, and forming semiconductor particle on substrate.    USE - Manufacture of semiconductor particle for manufacture of electric power generation elements, such as diode, transistor, and solar cell.    ADVANTAGE - Highly purified semiconductor particles, such as silicon particles, which have high recovery rate and small particle size distribution can be manufactured.    DETAILED DESCRIPTION - A semiconductor particle is manufactured by positioning substrate (10) and target (11) in parallel in reactive gas atmosphere, maintaining temperature of substrate and temperature of target so that etching rate of target by plasma (P) may become larger than that of substrate top, performing atmospheric pressure plasma-enhanced chemical transport which deposits constituent of target on substrate by making discharge occur between substrate and target in which discharge occurs by using high frequency electric power (4) of ultrashort wave, and forming semiconductor particle on substrate. Substrate contains material which does not easily produce chemical reaction in substrate surface after exposure to plasma. An INDEPENDENT CLAIM is included for semiconductor particle manufacturing apparatus which comprises reactive gas supply part (8) and discharge part (9) which supply and discharge reactive gas, respectively, 1st electrode (2) which supports target (11), 2nd electrode (3) which supports substrate (10) so that it may become in parallel with respect to target, temperature control part which controls temperature of 1st and 2nd electrodes so that etching rate of target by plasma (9) may become larger than that of substrate, and atmospheric pressure plasma-enhanced chemical transport apparatus which deposits constituent of target on substrate by making discharge occur between substrate and target through high frequency electric power (4) in which frequency electric power is high electric power of ultrashort wave band.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the semiconductor particle manufacturing apparatus.    1st electrode (2)    2nd electrode (3)    High frequency electric power (4)    Reactive gas supply part (8)    Discharge part (9)    Substrate (10)    Target (11)    Plasma (P)