NOVELTY - The method comprises: forming a first layer (312) on a substrate (302) using reactive sputtering, where the first layer is operable as an absorber layer (306) and comprises a chalcogenide material; heating the substrate at a temperature of 400-650 degrees C; annealing the substrate using a directed energy source at a temperature below a melting point of the chalcogenide material; and passivating the annealed chalcogenide material. The reactive sputtering comprises sputtering metal sputtering targets in an environment comprising the presence of a reactive source.    USE - The method is useful for forming a semiconductor material on a substrate (claimed) that is useful in thin film photovoltaic device such as a solar cell.    ADVANTAGE - The method is capable of energy-efficiently forming the semiconductor material on the substrate with high conversion efficiency, reliability and productivity in an economical and environmentally friendly manner.    DETAILED DESCRIPTION - The method comprises: forming a first layer (312) on a substrate (302) using reactive sputtering, where the first layer is operable as an absorber layer (306) and comprises a chalcogenide material; heating the substrate at a temperature of 400-650 degrees C; annealing the substrate using a directed energy source at a temperature below a melting point of the chalcogenide material; and passivating the annealed chalcogenide material. The reactive sputtering comprises sputtering metal sputtering targets in an environment comprising the presence of a reactive source. The directed energy source is a flash lamp. The process parameters of the directed energy source are varied in a combinatorial manner between site-isolated regions defined on a surface of the substrate, where the process parameters comprise energy source power, dwell time, substrate temperature, pressure, and/or annealing atmosphere composition.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a simple substrate thin film photovoltaic stack.    Substrate (302)    Back contact layer (304)    Absorber layer (306)    Buffer layer (308)    Front contact layer. (312)