NOVELTY - Manufacturing a silicon monocrystal seed (12) for silicon-wafer production, comprises: arranging silicon monocrystal seed in the bottom region of a crucible (3), which has a seed surface with a (110)-crystal orientation parallel to the bottom region of the crucible, in which liquid high-purity silicon is solidified, starting from the seed surface of the silicon monocrystal seed; and separating the silicon block into silicon-wafers such that the wafer surface has (100)-crystal orientation. The silicon monocrystal seed is manufactured from a silicon monocrystal block.    USE - The method is useful for manufacturing a silicon monocrystal seed for silicon-wafer production.    ADVANTAGE - The method: is cost efficient; produces optimal silicon monocrystal seed plates for crucible solidification method; and reduces the wastage of seed material for manufacturing the seed plates.    DETAILED DESCRIPTION - Manufacturing a silicon monocrystal seed (12) for silicon-wafer production, comprises: arranging silicon monocrystal seed in the bottom region of a crucible (3), which has a seed surface with a (110)-crystal orientation parallel to the bottom region of the crucible, in which liquid high-purity silicon is solidified, starting from the seed surface of the silicon monocrystal seed; and separating the silicon block into silicon-wafers such that the wafer surface has (100)-crystal orientation. The silicon monocrystal seed is manufactured from a silicon monocrystal block, which has (110)-spatial orientation. The silicon monocrystal block is split parallel to the block axis for forming the seed surface of the silicon monocrystal seed with the (110)-crystal orientation and a lateral surface of the silicon monocrystal seed with the (100)-crystal orientation. INDEPENDENT CLAIMS are also included for:    (1) manufacturing silicon-wafers, comprising manufacturing several tracks, which are made of a silicon monocrystal block present in the silicon monocrystal seed, cutting-off the silicon monocrystal block in tracks parallel to the block axis for forming the seed surface of the silicon monocrystal seed with (110)-crystal orientation and the lateral surface of the silicon monocrystal seed with the (100)-crystal orientation, where the tracks are combined to almost completely cover the bottom region of the crucible, and the silicon block formed in the crucible is divided during separating into silicon-wafers, into rectangular silicon cuboids, the cuboid axis of which respectively extends parallel to the seed surface of the silicon monocrystal seed and perpendicular to the tracks of the silicon monocrystal seed, and cutting the silicon cuboids across the cuboid axis;    (2) the silicon-wafer manufactured by the above mentioned method; and    (3) a silicon solar-cell comprising the silicon-wafer, where a p/n-junction is configured between the (100)-wafer front- and rear side, and the (100)-wafer front-side has a coating in which at least the wafer rear-side is provided with contacts.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic side sectional view of a device (1) for melting and crystallizing silicon blocks by using a silicon monocrystal seed in the bottom region.    Device (1)    Crucible (3)    Interior space (4)    Crucible base (5)    Silicon monocrystal seed (12)