NOVELTY - The method comprises depositing a layer comprising group III atoms on a substrate (206) by a first method in a first processing chamber and depositing a layer on the substrate by a second method in a second processing chamber. The first processing chamber comprises: a first processing environment; a second processing environment separated from the first processing environment; a substrate transport system (204) to move the substrate for sequential processing from the first processing environment to the second processing environment; and a gas control system.    USE - The method is useful for manufacturing a group III-V thin film device (claimed) that is useful in LEDs such as infrared LEDs, lasers, solar cells and multiple quantum well heterostructure devices.    ADVANTAGE - The method is capable of manufacturing the group III-V thin film device with reduced dust formation and without undesirable generation of particles and damaging chamber hardware and pumps, thus increasing quality and efficiency of the thin film device.    DETAILED DESCRIPTION - The method comprises depositing a layer comprising group III atoms on a substrate (206) by a first method in a first processing chamber and depositing a layer on the substrate by a second method in a second processing chamber. The first processing chamber comprises: a first processing environment; a second processing environment separated from the first processing environment; a substrate transport system (204) to move the substrate for sequential processing from the first processing environment to the second processing environment; and a gas control system to maintain isolation between the first processing environment and the second processing environment. The first method comprises: forming a first layer on the substrate in the first processing environment by contacting the substrate with precursor gases comprising group III precursors, contacting the substrate with a first neutral plasma comprising group V precursors in the second processing environment; and repeating the forming and contacting steps until a layer of desired thickness is formed. The first processing environment is to perform chemical vapor deposition that is metal organic chemical vapor deposition (MOCVD). The second processing environment is to contact the substrate with plasma. The second method comprises forming a second layer on the substrate by contacting the substrate with precursor gases in the second processing chamber. The precursor gases in the first processing environment further comprise group V precursors. The plasma-excited species of nitrogen comprises nitrogen species having a lowest excited state of molecular nitrogen. The method further comprises contacting the substrate with second plasma in a third processing environment; and depositing an additional layer by the first method and monitoring the first layer in a fourth processing environment. The second plasma is different from the first neutral plasma. The third processing environment is separated and isolated from the first and second processing environments. A second layer is deposited by the second method. The fourth processing environment is separated from and isolated from the first and second processing environments and comprises a metrology environment. The monitoring step comprises determining layer thickness, surface quality, deposition rate, uniformity across the substrate, uniformity in one substrate relative to another, composition of layers, temperature of the substrate and layers or curvature induced in the substrate during growth.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a chemical vapor deposition system.    Outer chamber (200)    Environments (202)    Substrate transport system (204)    Substrate. (206)