NOVELTY - The method involves patterning etch-impeding material formed on an emitter surface of a silicon wafer solar cell to form an etch-impeding mask. Emitter surface of silicon wafer solar cell is etched back with the etch- impeding mask using a solution based on alkaline and oxidizing solutions etched through etch-impeding mask (410) at slower rate through unmasked areas of the emitter surface to form heavily doped selective emitter (412) on the silicon wafer solar cell. The emitter surface of silicon wafer solar cell is etched-back until target sheet resistance is reached.    USE - Method for fabricating silicon wafer solar cell.    ADVANTAGE - Operating efficiency of the silicon wafer solar cell can be improved. Effective reduction or removal of heavily doped dead layer and surface contaminants can be achieved for higher efficiencies using inline-diffusion. Silicon wafer solar cell can be manufacturing easily and efficiently with low manufacturing cost.    DETAILED DESCRIPTION - The emitter surface of the silicon wafer solar cell is etched-back using solution of potassium hydroxide (KOH) and sodium hypochlorite solutions. Etch-blocking mask is formed on the etch-impeding material formed on the emitter surface of the silicon wafer solar cell. Etch-impeding material is patterned through etch-blocking mask to form etch-impeding mask, and etch-blocking mask is comprised of screen-printing the blocking mask on the etch- impeding material formed on the emitter surface of the silicon wafer solar cell. Unmasked portions of etch-impeding material are removed from the emitter surface prior to the etching-back of the emitter surface of the silicon wafer solar cell. Unmasked portions of etch-impeding material are removed using dilute hydrofluoric acid (HF) solution. Emitter surface of silicon wafer solar cell is etched back, while removing the etch-blocking mask, and etch- impeding material is comprised of silicate glass material. Silicate glass material is selected from the group comprising phosphosilicate glass (PSG) and borosilicate glass (BSG). Surface contaminants are removed using a dilute HF solution, and comprised of residual etch-impeding material after etching-back the emitter surface of the silicon wafer solar cell. An anti-reflective coating (ARC) is deposited on an outer surface of the emitter for performing final metallization (415).    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the process for fabricating silicon wafer solar cell.    Silicon wafer (402)    Diffused doped emitter layer (404)    Etch-impeding mask (410)    Heavily doped selective emitter (412)    Metallization (415)