TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: The first bending angle or the first curvature is the same as or different than the second bending angle or the second curvature. The first graphene stack has a first characteristic dimension and the second graphene stack has a second characteristic dimension, where the first characteristic dimension is different than the second characteristic dimension. The first graphene stack has a first graphene orientation and the second graphene stack has a second graphene orientation, where the first graphene orientation is different than the second graphene orientation. The first and second graphene stacks are made of first and second graphene types respectively, where the first graphene type is different than the second graphene type. The graphene stacks comprises a third graphene stack formed in third zone, where the third graphene stack comprises a third non-planar graphene layer having third bending angle or third curvature. At least two of the first, second, and third graphene stacks are substantially the same. At least two of the group consisting of the first non-planar graphene layer, the second non-planar graphene layer, and the third non-planar graphene layer differ from each other in at least one of a characteristic dimension, a graphene orientation or a graphene type. The first bending angle or the first curvature is different than the third bending angle or the third curvature. The first and the third graphene stacks form an intersection and are functionally separated by a boundary condition at the intersection. The third graphene stack is substantially the same as the first graphene stack and is separated from the first graphene stack in the first zone. At least one graphene stack from the graphene stacks is formed in each zone of the zones. A graphene stack formed in one zone is substantially the same as a graphene stack formed in another zone. The first graphene stack further comprises a second graphene layer that has a different characteristic dimension than the first graphene layer to provide the first graphene stack with bandgaps. The first graphene stack comprises a second graphene layer, where the first non-planar graphene layer and the second graphene layer have the same thickness. The first graphene stack comprises a second graphene layer, where the first non-planar graphene layer and the second graphene layer have different thicknesses. A graphene layer in the first graphene stack consists of 1-100 graphene sheets. A graphene layer in the first graphene stack comprises over 100 graphene sheets.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Substrate: The substrate comprises a feature in the first zone, where the feature has a non-planar surface. The first non-planar graphene layer of the first graphene stack overlays the non-planar surface of the feature. The feature comprises an element and/or recess. The non-planar surface is a circumferential surface of the feature. The non-planar surface is concave and/or convex. The feature formed in the first zone comprises a hole, a dot, a pillar, a cone, a truncated cone or a dome. A first curvature of the non-planar surface has a negative value. The substrate is an unpatterned or a patterned substrate. The substrate comprises a semiconducting material, glass, sapphire, an aluminum oxide, a metallic slug, silicon, a silicon carbide, germanium, a boron nitride, a gallium arsenide or molybdenum sulfide. The substrate comprises layers, in which each respective layer is made of corresponding material. EXAMPLE - No suitable example given.