NOVELTY - Growing monocrystalline silicon ingot involves providing monocrystalline ingot growing apparatus including chamber (100) having internal pressure, and crucible (102) disposed within the chamber; preparing silicon melt (104) in crucible; introducing inert gas into the chamber from a gas inlet above the silicon melt, where the inert gas flows over surface of silicon melt and has flow rate; introducing volatile dopant into silicon melt, where the volatile dopant includes indium, growing an indium-doped monocrystalline silicon ingot, and controlling indium dopant concentration in ingot.    USE - For growing a monocrystalline silicon ingot (claimed), useful in the fabrication of semiconductors and solar cells.    ADVANTAGE - The indium-doped monocrystalline silicon wafer has high efficiency of converting solar spectral irradiance (e.g. sunlight) on its surface. The indium-doped monocrystalline silicon wafer is capable of solar spectral irradiance conversion efficiency of at least 17%, 18%, 19%, or 20%, as measured under an absolute air mass of 1.5. Advantageously, the light induced degradation of indium-doped monocrystalline silicon wafer is less than the LID of conventional boron-doped solar cells.    DETAILED DESCRIPTION - Growing monocrystalline silicon ingot involves providing monocrystalline ingot growing apparatus including chamber (100) having an internal pressure, and a crucible (102) disposed within the chamber; preparing silicon melt (104) in the crucible; introducing an inert gas into the chamber from gas inlet above the silicon melt, where the inert gas flows over the surface of the silicon melt and has a flow rate; introducing volatile dopant into the silicon melt, where the volatile dopant includes indium; growing an indium-doped monocrystalline silicon ingot, where the indium-doped monocrystalline silicon ingot has an indium dopant concentration; and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber. An INDEPENDENT CLAIM is included for monocrystalline silicon ingot having a central axis, a circumferential edge, a radius extending from the central axis to the circumferential edge, and a mass, comprising a mean indium concentration of at least 5x 1014 atoms per cubic centimeter; and an axial variance of indium concentration of less than 5x 1014 atoms per cubic centimeter over an axial length of over 20 centimeters, where the radius of the ingot is greater than about 75 millimeters.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-section of a crystal growth chamber.    Growth chamber (100)    Crucible (102)    Silicon melt (104)    Susceptor (106)    Furnace (108)    Heating element (110)    Insulation (112)    Reflectors (114)    Melt surface (116)    Pulling cable (120)    Phase boundary (138)    Programmable devices (140)