NOVELTY - Ultralow defect gallium-containing nitride crystal comprising gallium, nitrogen, a first large area surface and a second large area surface, is new. The crystal has a wurtzite crystal structure. The first and second large area surfaces are parallel to one another, and have a maximum dimension of greater than or equal to 10 mm. The at least one of the first large area surface and the second large area surface is characterized by a dislocation density of 104 cm-2 and by a stacking fault concentration of 10 cm-1, as determined by etching, in a solution comprising phosphoric acid and sulfuric acid.    USE - The ultralow defect gallium-containing nitride crystal is useful for manufacturing bulk or patterned substrates, which are useful in optoelectronic devices, lasers, LEDs, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, and transistors, where the crystals are aluminum nitride, indium nitride, indium gallium nitride, aluminum gallium nitride or aluminum indium gallium nitride containing crystals.    ADVANTAGE - The ultralow defect gallium-containing nitride crystal is free of thermal expansion mismatch, impurities, and tilt boundaries, thus efficiently providing the electronic devices with improved performance in a simple, easy and cost effective manner.    DETAILED DESCRIPTION - Ultralow defect gallium-containing nitride crystal, comprises gallium, nitrogen, a first large area surface and a second large area surface, is new. The crystal has a wurtzite crystal structure. The second large area surface is on the opposite side of the crystal. The first and second large area surfaces are parallel to one another, and have a maximum dimension of greater than or equal to 10 mm. The first large-area surface comprises a crystallographic orientation that is miscut from a (10-10) m-plane by -60 degrees C to 60 degrees C toward a (0001) +c-direction and by 10 degrees C toward an orthogonal (1-210) a-direction. The at least one of the first large area surface and the second large area surface is characterized by a dislocation density of 104 cm-2 and by a stacking fault concentration of 10 cm-1, as determined by etching, in a solution comprising one or more of phosphoric acid, which is conditioned by prolonged heat treatment to form polyphosphoric acid, and sulfuric acid, at 100-500 degrees C for 5 minutes to 5 hours, where the temperature and the time are selected to cause formation of etch pits with diameters of 1-25 mu m.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic flow diagram of a method of forming a proto-seed crystal.    Substrate (110)    Boule (120)    Proto-seeds. (130)