NOVELTY - The method comprises applying a metal layer to one side of a semiconductor component, locally heating the metal layer such that the metal layer is momentarily melted in a local region, where the metal layer is formed as a metal foil, and removing non-melted regions of the metal foil. The method further comprises applying an intermediate layer such as a dielectric layer on the side of the semiconductor component, removing the intermediate layer in the local region by laser ablation, and removing the metal film remote from the semiconductor component by illuminating laser beam.    USE - The method is useful for locally making contact with a semiconductor component such as a part of a photovoltaic solar cell in the method for producing a photovoltaic solar cell.    ADVANTAGE - The method is capable of making the contact with the semiconductor component in an economical manner.    DETAILED DESCRIPTION - The method comprises applying a metal layer to one side of a semiconductor component, locally heating the metal layer such that the metal layer is momentarily melted in a local region, where the metal layer is formed as a metal foil, and removing non-melted regions of the metal foil. The method further comprises applying an intermediate layer such as a dielectric layer on the side of the semiconductor component, removing the intermediate layer in the local region by laser ablation, and removing the metal film remote from the semiconductor component by illuminating laser beam. The metal foil is patterned during the contacting process. A predetermined breaking point is formed in the metal film during the heating step, and is partially spaced-apart from non-melted regions of the semiconductor component before the patterning step. A multilayered metal film is used as the metal layer. The laser beam has a beam profile that is a higher intensity in edges than in a center. A metallic seed layer is formed by a first metallization process, and a second seed layer is formed by a second metallization process. The metal foil is applied on side of n-doped and p-doped regions (2a, 2b) of the semiconductor component. The n-doped and p-doped regions are electrically connected to the metal foil so that a metallic contact structure is formed the n-doped and p-doped regions after the removal of the metal film. An INDEPENDENT CLAIM is included for a machine for locally making contact with a semiconductor component.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic top view of a back of back-contact solar cells.    P-doped regions (2a, 2b)    Doping structure. (14)