NOVELTY - Producing back electrode type heterojunction solar cells, comprises e.g. preparing n-type crystalline silicon substrate (101), laminating intrinsic type amorphous semiconductor layer (102), p-type amorphous semiconductor layer (103) and a transparent conductive oxide film (104) on back of the substrate, dividing into p-doped region and n-doped region, etching, laminating intrinsic type amorphous semiconductor layer, n-type amorphous semiconductor layer (107) and transparent conductive oxide film on front of substrate back, etching, laminating, and forming p-electrode and n-electrode.    USE - The method is useful for producing back electrode type heterojunction solar cells (claimed).    ADVANTAGE - The method produces solar cells having improved photoelectric conversion, is simple and time saving, and prevents degradation of the cells.    DETAILED DESCRIPTION - Producing back electrode type heterojunction solar cells, comprises (i) preparing n-type crystalline silicon substrate (101), (ii) sequentially laminating intrinsic type amorphous semiconductor layer (102), p-type amorphous semiconductor layer (p) (103) and a transparent conductive oxide film (104) on back of the prepared substrate, (iii) dividing the back of the substrate into form, which is alternately arranged repeatedly with p-doped region and n-doped region, etching intrinsic type amorphous semiconductor layer, p-type amorphous semiconductor layer (p) and transparent conductive oxide film of the n-doped region, and removing, (iv) sequentially laminating intrinsic type amorphous semiconductor layer, n-type amorphous semiconductor layer (n) (107) and transparent conductive oxide film on front of the substrate back, (v) etching intrinsic type amorphous semiconductor layer, n-type amorphous semiconductor layer (n) and transparent conductive oxide film of the p-doped region, removing, sequentially laminating intrinsic type amorphous semiconductor layer, n-type amorphous semiconductor layer (n) and transparent conductive oxide film of the p-doped region, and sequentially laminating intrinsic type amorphous semiconductor layer, n-type amorphous semiconductor layer (n) and transparent conductive oxide film of the n-doped region, and (vi) forming p-electrode on the transparent conductive oxide film of the p-doped region, and forming n-electrode on the transparent conductive oxide film of the n-doped region. An INDEPENDENT CLAIM is also included for back electrode type heterojunction solar cells comprising n-type crystalline silicon substrate, intrinsic type amorphous semiconductor layers, p-type amorphous semiconductor layer and transparent conductive oxide film sequentially stacked on substrate back of the p-doped region, intrinsic type amorphous semiconductor layers, n-type amorphous semiconductor layer and transparent conductive oxide film sequentially stacked on substrate back of the n-doped region, p-electrode arranged on the transparent conductive oxide film of the p-doped region, and n-electrode arranged on the transparent conductive oxide film of the n-doped region.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-section of the back electrode type heterojunction solar cells (Drawing includes non-English language text).    Crystalline silicon substrate of n-type (101)    Intrinsic type amorphous semiconductor layer (102)    Amorphous semiconductor layer of p-type (103)    Transparent conductive oxide film (104)    Amorphous semiconductor layer of n-type (107)