TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The process further comprises: creating prior to the doping the first zone, at least one barrier layer, where a first barrier layer in the barrier layer overlays the first zone for controlling the many dopant profiles, where the first barrier layer has a first cross sectional barrier profile that is correlated to the first predetermined cross sectional graphene profile; removing subsequently to the doping the first zone and prior to the generating, the at least one barrier layer or its portion thus allowing subsequent generation of the first graphene layer on the substrate by the generating step; doping the second zone with carbon in accordance with a second many dopant profiles, where each respective dopant profile in the second many dopant profiles has the doping for a corresponding subzone in the second many sub zones, where at least one dopant profile in the second many dopant profiles is different than another dopant profile in the second many dopant profiles and generating the second many graphene sublayers on the substrate by heating the substrate, where at least one graphene sublayer in the second many graphene sublayers has a characteristic dimension that is different than an adjacent graphene sublayer in the second many graphene sublayers, where the graphite based structure comprises a second graphene layer overlying a second zone in the many zones of the substrate, the second zone comprises a second many subzones, the second graphene layer comprising a second many graphene sublayers that collectively defines a second predetermined cross sectional graphene profile for the second zone; and doping the third zone with carbon in accordance with a third many dopant profiles, where each respective dopant profile in the third many dopant profiles has the doping for a corresponding subzone in the third many subzones, where at least one dopant profile in the third many dopant profiles is different than another dopant profile in the third many dopant profiles and generating the third many graphene sublayers on the substrate by heating the substrate, where at least one graphene sublayer in the third many graphene sublayers has a characteristic dimension that is different than an adjacent graphene sublayer in the third many graphene sublayers, thus producing the third graphene layer having multiple bandgaps and the graphite based structure, where the the graphite based structure comprises a third graphene layer overlying a third zone in the many zones of the substrate, the third zone comprises a third many subzones, the third graphene layer comprising a third many graphene sublayers that collectively defines a third predetermined cross sectional graphene profile for the third zone. The step of doping the second zone with carbon is conducted concurrently with or subsequently to the doping the first zone with carbon. The step of generating the second many graphene sublayers is conducted concurrently with (preferred) or subsequently to the generating the first many graphene sublayers. The first and second graphene layers form an intersection, and are separated from each other by a boundary condition at the intersection. The second graphene layer is adjacent to the first graphene layer and separated from the first graphene layer by a trench. At least two of the first, second and third predetermined cross sectional graphene profiles are the same or different. At least two of the first, second and third graphene layers form an intersection, and separated from each other by a boundary condition at the intersection or at least two of the first, second and third graphene layers are adjacent to each other and separated from each other by a trench. The doping comprises ion implantation. The ion implantation is performed with a dose between 105 ions/cm2 and 1021 ions/cm2 and energy of 5 400 KeV. The step of generating the graphene layer by heating the substrate comprises exposing the substrate to many heat cycles of 900 1300 degrees in a furnace with quenching between heat cycles in the many heat cycles, or rapid thermal anneal including a pulsed source. The step of creating comprises forming a barrier layer in the at least one barrier layer at a predetermined thickness by depositing a barrier material on the substrate or oxidizing the substrate and tailoring the formed barrier layer to correlate with the first predetermined cross sectional graphene profile by lithographically removing undesired portion of the barrier layer and/or modifying boundaries or edges of the barrier layer or forming the first barrier layer at a predetermined thickness by depositing a barrier material on the substrate or oxidizing the substrate and correlating the first barrier layer with the first predetermined cross sectional graphene profile by lithographically removing an undesired portion of the barrier layer and/or tailoring an edge or a side wall of the barrier layer. The step of removing the at least one barrier layer comprises anisotropically etching the substrate. The removing the barrier layer is conducted using plasma etching, ion beam etching, reactive ion etching or sputtering and evaporation. Preferred Components: The first many dopant profiles comprises a first dopant profile formed in a first subzone in the many subzones and a different second dopant profile formed in a second subzone in the first many subzones. The first many dopant profiles further comprises a third dopant profile formed in a third subzone in the first many subzones, where the third subzone in adjacent to the second subzone in the first many subzones, and the third dopant profile is different than the second dopant profile in the first many dopant profiles. The first barrier layer comprises first many barrier sublayers that collectively defines the first predetermined cross sectional barrier profile. The first many dopant profiles comprises a first dopant profile formed in a first subzone in the first many subzones and a different second dopant profile formed in a second subzone in the first many subzones and the first many barrier sublayers comprises a first barrier sublayer overlaying the second subzone in the many subzones, the first many dopant profiles further comprises a third dopant profile formed in a third subzone in the first many subzones, where the third subzone is adjacent to the second subzone in the first many subzones, and the third dopant profile is different than the second dopant profile in the first many dopant profiles and the first many barrier sublayers comprises the first barrier sublayer and a second barrier sublayer, where the first barrier sublayer overlays the second subzone and the third sub zone in the first many subzones, and the second barrier sublayer overlays the third subzone in the first many subzones. The second predetermined cross sectional graphene profile is the same as or different than the first predetermined cross sectional graphene profile. The second graphene layer has thickness that is same as or different than the first graphene layer. At least two of the first, second and third graphene layers have a same or different thickness. In the method, one dopant profile in first many dopant profiles has a maximum dopant concentration between 105 ions/cm2 and 1021 ions/cm2. The first dopant profile has maximum dopant concentration of 1011 ions/cm2 and 1021 ions/cm2 and the second dopant profile has maximum dopant concentration of 105 ions/cm2 and 1018 ions/cm2 or The first dopant profile has maximum dopant concentration of 1015 ions/cm2 and 1021 ions/cm2, the second dopant profile has maximum dopant concentration of 1010 ions/cm2 and 1019 ions/cm2 and the third dopant profile has maximum dopant concentration of 105 ions/cm2 and 1014 ions/cm2. At least one dopant profile in the first many dopant profiles has a dopant penetration depth that is different than another dopant profile in the first many dopant profiles. In the method, one dopant profile in the first many dopant profiles has dopant penetration depth that is 1 nm and 5 mu m. The first dopant profile has first dopant penetration depth of 20 nm and 5 mu m and the second dopant profile has second dopant penetration depth of 2 nm and 3 mu m or the first dopant profile has first dopant penetration depth of 20 nm and 10 mu m, the second dopant profile has a second dopant penetration depth of 10 nm and 5 mu m and the third dopant profile has third dopant penetration depth of 2 nm and 3 mu m. The substrate comprises a semiconducting material, display glass, sapphire, aluminum oxide, metallic slug or flexible material, silicon, silicon carbide, germanium, boron nitride, gallium arsenide or molybdenum sulfide. The at least one graphene sublayer in the first graphene layer is flat or curved. The one graphene sublayer in the first graphene layer has a portion overhanging, butting or joining another adjacent graphene sublayer in the first graphene layer. An outmost one graphene sublayer in the first graphene layer covers an underlying graphene sublayer in the first graphene layer. The first graphene layer has a characteristic dimension that is 1 20 nm, 20 50 nm, 50 100 nm or 100 500 nm. The first graphene sublayer in the first graphene layer has characteristic dimension of 1 20 nm, the second graphene sublayer in the first graphene layer has characteristic dimension of 20 50 nm and the third graphene sublayer in the first graphene layer has characteristic dimension of 50 100 nm. The first graphene sublayer has thickness that is same as or different than the second graphene sublayer in the first graphene layer. At least two of the first, second and third graphene sublayer have same thickness or different thicknesses. One graphene sublayer in the first graphene layer comprises 1 graphene sheet or graphene sublayer in the first graphene layer comprises 2 10 graphene sheets or 10 30 graphene sheets, or 30 50 graphene sheets or 50 100 graphene sheets or over 100 graphene sheets. The barrier layer comprises a dielectric material, silicon dioxide or silicon nitride. The graphene layers comprises one graphene layer, 2 graphene layers, 2 10 graphene layers, 10 100 graphene layers, 100 1000 graphene layers or more than 1000 graphene layers, each overlaying a corresponding zone in the zones. The first graphene layer or each graphene layer in graphene layers has smooth shape, stepwise shape, concave shape or convex shape or the first graphene layer has cup like shape, conical like shape or dome like shape. The first graphene layer comprises many graphene sublayers, where a first graphene sublayer and a second graphene sublayer in the many graphene sublayers have different characteristic dimensions along a first lateral direction and the first graphene sublayer and the second graphene sublayer in the many graphene sublayers have same characteristic dimension along a second lateral direction or the first graphene sublayer and a second graphene sublayer in the many graphene sublayers have different characteristic dimensions along both a first lateral direction and a second lateral direction. The second graphene layer in the graphene layers has a cross sectional graphene profile that is same as or different than the first graphene layer in the graphene layers. The second graphene layer in the graphene layers has a thickness that is same as or different than the first graphene layer in the graphene layers. In the graphite based structure, where each graphene layer in the graphene layers has cross sectional graphene profile that is same as or different than the first graphene layer in the graphene layers. The first portion of the second graphene sublayer overlays on the entire top surface of the first graphene sublayer or on a portion of the top surface of the first graphene sublayer. The surface of the first zone further comprises a third subsurface adjacent to the first subsurface and the second graphene sublayer in the first many graphene sublayers further comprises a third portion of the second graphene sublayer formed on the third subsurface and a second intermediate portion connecting the first portion and the third portion of the second graphene sublayer. The first graphene sublayer or the second graphene sublayer has characteristic dimension that is 1 20 nm, 20 50 nm, 50 100 nm or 100 500 nm. The first graphene sublayer has thickness that is same or different than as the second graphene sublayer. The first graphene sublayer of the second graphene sublayer comprises 1 graphene sheet, 2 50 graphene sheets, 50 100 graphene sheets or over 100 graphene sheets. The surface of the first zone further comprises a fourth subsurface adjacent to the second sub surface and a third graphene sublayer in the first many graphene sublayers comprises a first portion formed on a top surface of the second graphene sublayer, a second portion formed on the fourth subsurface and a first intermediate portion connecting the first portion and the second portion of the third graphene sublayer, where the third graphene sublayer has a characteristic dimension that is different than the second graphene sublayer. The surface of the first zone further comprises: a third sub surface adjacent to the first subsurface; a fourth subsurface adjacent to the second subsurface; and a third graphene sublayer in the first many graphene sublayers comprises a first portion formed on a top surface of the second graphene sublayer, a second portion formed on the fourth sub surface, a third portion formed on the third sub surface, a first intermediate portion connecting the first portion and the second portion of the third graphene sublayer, and a second intermediate portion connecting the first portion and the third portion of the third graphene sublayer. The first portion of the second graphene sublayer overlays on the entire top surface of the first graphene sublayer or on a portion of the top surface of the first graphene sublayer. The surface of the first zone further comprises: a third sub surface adjacent to the first subsurface, a fourth subsurface adjacent to the second sub surface, and a fifth subsurface adjacent to the third sub surface; the second graphene sublayer in the many graphene sublayers further comprises: a third portion of the second graphene sublayer formed on the third subsurface, and a second intermediate portion connecting the first portion and the third portion of the second graphene sublayer; and a third graphene sublayer in the many graphene sublayers comprises a first portion formed on a top surface of the second graphene sublayer, a second portion formed on the fourth sub surface, a third portion formed on the fifth subsurface, a first intermediate portion connecting the first portion and the second portion of the third graphene sublayer, and a second intermediate portion connecting the first portion and the third portion of the third graphene sublayer. The surface of the first zone further comprises a fourth subsurface adjacent to the second subsurface and separated from the first subsurface by the second sub surface, a third graphene sublayer in the first many graphene sublayers is formed on the fourth sub surface of the surface and the second graphene sublayer in the first many graphene sublayers further comprises a third portion formed on a top surface of the third graphene sublayer and a second intermediate portion connecting the first portion and the third portion of the second graphene sublayer. The first graphene sublayer, the second graphene sublayer or the third graphene sublayer has a characteristic dimension that is 1 20 nm, 20 50 nm, 50 100 nm or 100 500 nm. At least two of the first graphene sublayer, the second graphene sublayer and the third graphene sublayer have the same thickness or different thicknesses. The first graphene sublayer, the second graphene sublayer or the third graphene sublayer comprises 1 graphene sheet, 2 50 graphene sheets, 50 100 graphene sheets or over 100 graphene sheets. The fourth graphene sublayer in the first many graphene sublayers is formed on a top surface of the second graphene sublayer, where the fourth graphene sublayer in the first many graphene sublayers has characteristic dimension that is same as or different than the second graphene sublayer, and the fourth graphene sublayer in the first many graphene sublayers has thickness that is same as or different than the first, second or third graphene sublayer, where the surface of the first zone is flat or curved. The substrate comprises many layers, each respective layer in the many layers made of corresponding material. The graphene layers comprise 1 graphene layer formed on a surface of a zone in the zones or 2 graphene layers, 2 10 graphene layers, 10 100 graphene layers, 100 1000 graphene layers or more than 1000 graphene layers each formed on a surface of a corresponding zone in the zones. The second graphene layer in the graphene layers is formed on a surface of second zone in the zones, the second graphene layer has a cross sectional graphene profile that is same as or different than the first graphene layer in at least one graphene layer. The second graphene layer in the graphene layers is formed on a surface of a second zone in the zones, the second graphene layer has a thickness that is same as or different than the first graphene layer in at least one graphene layer. The second graphene layer in at least one graphene layer is formed on a surface on a surface of a second zone in the at least one zone, the second graphene layer forming an intersection with the first graphene layer and separated from the first graphene layer by a boundary condition at the intersection or the second graphene layer in the at least one graphene layer is formed on a surface of a second zone in the at least one zone, the second graphene layer is separated from the first graphene layer by a trench. EXAMPLE - No suitable example given.