NOVELTY - The solar cell has back surface field portion (170) contacted with semiconductor substrate-free actual amorphous silicon layer. N-type amorphous silicon layer (170b) is formed on N-type impurity to high concentration in comparison with substrate (110) while positioning amorphous silicon layer at rear surface of intrinsic amorphous silicon layer (170a). N-type microcrystalline silicon layer (170c) is formed on N-type impurity to high concentration in comparison with substrate while positioning N-type microcrystalline silicon layer at rear surface of amorphous silicon layer.    USE - Bifacial light-receiving type solar cell.    ADVANTAGE - The photoelectric conversion efficiency of the solar cell is improved and the manufacturing cost of the solar cell is reduced. Since the oxide aluminum film having the first dielectric layer is located at the front side of the emitter portion, the recombination which is generated on the surface of the emitter part is reduced. The passivation property at the interface of the crystalline silicon is improved with the intrinsic amorphous silicon layer, so that the recombination generated on the surface at the back surface field portion is reduced. The constant resistance of the second electrode is reduced and the fill factor is increased. The back surface field portion is formed with microcrystal silicon layer and the laser beam having the low energy density is used, so that the thermal damage of the substrate by the laser beam is minimized and thus the generation of the dark current is minimized and the open circuit voltage is increased. The deglazing process can be omitted in the plating process, so that the manufacturing process of the solar cell is simplified and the reflectivity of the light at the front side of the solar cell and rear surface are reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of bifacial light-receiving type solar cell.    Semiconductor substrate (110)    Back surface field portion (170)    Intrinsic amorphous silicon layer (170a)    N-type amorphous silicon layer (170b)    N-type microcrystalline silicon layer (170c)