NOVELTY - The method comprises: providing a doped semiconductor wafer comprising a front side, a back side, and a pn junction; selectively applying a resist composition on top of the front side of the semiconductor wafer, where the resist composition comprises hydrogenated rosin resins that are solids at room temperature, hydrogenated rosin resin esters that are liquids at room temperature, and fatty acids; and applying an etch composition to the semiconductor to etch away exposed sections of the front side of the semiconductor to form current tracks.    USE - The method is useful for forming a set of current tracks on semiconductors of a semiconductor device including photovoltaic and solar cell.    ADVANTAGE - The method is capable of reducing the detectable undercutting between the resist composition and the front side of the semiconductor or the antireflective layer on the front side of the semiconductor to which the resist composition is applied, thus enabling the metal current tracks to have uniform dimensions and providing the semiconductor device with uniform current flow and increased electrical output, reducing or eliminating the short circuiting of adjacent current tracks due to interconnecting tributaries. The method is capable of enabling the formation of current tracks with fine line dimensions, thus increasing the current tracks on the semiconductor and enabling the formation of the current tracks on smaller sized wafers. The undesirable shadowing is reduced or eliminated by reducing the size of the current tracks, thus enabling an increase in the absorption of the incident light by the semiconductor device. The dissolved resist can be precipitated out by a neutralization process, thus permitting easy waste treatment, and permitting less periodic maintenance on equipment.    DETAILED DESCRIPTION - The method comprises: providing a doped semiconductor wafer comprising a front side, a back side, and a pn junction; selectively applying a resist composition on top of the front side of the semiconductor wafer, where the resist composition comprises hydrogenated rosin resins that are solids at room temperature, hydrogenated rosin resin esters that are liquids at room temperature, and fatty acids; and applying an etch composition to the semiconductor to etch away exposed sections of the front side of the semiconductor to form current tracks. The front side of the semiconductor further comprises an antireflective layer. An emitter layer of the front side of the semiconductor wafer is n++ doped. An INDEPENDENT CLAIM is included for a composition comprising hydrogenated rosin resins, hydrogenated rosin resin esters, and fatty acids.