NOVELTY - Method for processing substrate, involves determining moving velocity for moving a liquid application position on which the etching liquid is applied from an edge portion of a principal face of the substrate to a center portion of the principal face of the substrate, rotating the substrate in an rotational axis, passing through the principal face of the substrate and moving nozzle, and rotating the substrate in the rotational axis while continuing the discharge of the etching liquid toward the principal face of the substrate.    USE - The method is useful for processing substrate (claimed) including semiconductor wafers, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for field emission displays, substrates for optical discs, substrates for magnet discs, substrates for magnet-optical discs, glass substrates for photomasks, substrates for ceramics, and substrates for solar cells.    ADVANTAGE - The method enables to carry out etching processing for principal face of a substrate with high uniformity when adapting to changes of center discharging conditions by adjusting scan conditions.    DETAILED DESCRIPTION - Method for processing substrate, involves determining moving velocity for moving a liquid application position on which the etching liquid is applied from an edge portion of a principal face of the substrate to a center portion of the principal face of the substrate according to a supply condition of the etching liquid under a state that the liquid application position is positioned at the center portion of the principal face of the substrate, rotating the substrate in an rotational axis, passing through the principal face of the substrate and moving a nozzle while discharging the etching liquid such that the liquid application position is moved from the edge portion of the principal face of the substrate to the center portion of the principal face of the substrate, and rotating the substrate in rotational axis while continuing the discharge of the etching liquid toward the principal face of the substrate, under the state that the liquid application position is positioned at the center portion of the principal face of the substrate. An INDEPENDENT CLAIM is included for substrate processing apparatus.