NOVELTY - The method involves depositing a set of carbon nanotubes (30) on a surface of a transition metal layer (10) comprising a transition metal element. A semiconductor chalcogenide material layer is deposited directly on the set of carbon nanotubes. A transition metal chalcogenide layer is formed by thermal annealing, where the chalcogenide layer comprises a chalcogenide of the transition metal element, where the thermal annealing is performed at a temperature that induces an interaction between a semiconductor chalcogenide material of the chalcogenide material layer and the metal element.    USE - Method for forming a low resistance electrical contact between a transition metal layer and a semiconductor material during fabrication of a thin film solar cell.    ADVANTAGE - The method enables providing the electrical contact between the transition metal layer and the semiconductor chalcogenide material layer to be functionally intact even when gaps or cavities develop in the transition metal chalcogenide layer during a normal chalcogenide formation processes or variations in the chalcogenide formation processes, so that the reliability of the electrical contact between the transition metal layer and the semiconductor material of the semiconductor chalcogenide material layer is enhanced due to the presence of the set of carbon nanotubes over a comparative structure that does not include carbon nanotubes. The method enables forming the high work function material layer to reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer, thus enhancing efficiency of a solar cell including the chalcogenide semiconductor material.    DETAILED DESCRIPTION - The thermal annealing is a stand-alone anneal process. The transition metal element layer comprises an element that is selected from a group consisting of cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum and aurum. The semiconductor chalcogenide material is a semiconductor sulfide material. The transition metal element is molybdenum. The set of carbon nanotubes is predominantly metallic. The transition metal element is selected from niobium, vanadium, zinc, titanium, molybdenum, chromium, and tungsten. The semiconductor material layer comprises one of copper indium selenide, copper indium gallium selenide, Cu2(Zn,Fe)Sn(S,Se)4, Ga(S,Se), gallium(II) telluride, gallium arsenide, In2(S,Se)3, indium telluride, indium(III) phosphide, cadmium telluride, Cd(S,Se), ZnTe, Zn3P2, Pb(Se,S), Zn(S,Se), W(S,Se)2, bismuth sulfide, silver sulfide, nickel monosulfide, zinc oxide, cuprous oxide, cupric oxide, copper(I) sulfide, or iron disulfide.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure after deposition of carbon nanotubes on a transition metal layer formed on a substrate.    Substrate (8)    Transition metal layer (10)    Carbon nanotubes (30)