NOVELTY - The processing apparatus has an end station (270) that is configured to support a workpiece (295). An ion beam generator (210) is configured to generate an ion beam towards the end station. A scanning device (220) is configured to scan the ion beam along a transverse scanning direction. The scanning device is positioned in a first path of the ion beam towards the end station and out of a second path of the ion beam towards the end station.    USE - Processing apparatus for performing ion implantation on workpiece e.g. semiconductor wafer for semiconductor device and for substrate such as solar panels, and perform processing such as film deposition or surface treatment using ion implantation apparatus (claimed).    ADVANTAGE - The apparatus is enhanced with reduced equipment footprint, reduced purchasing and/or maintenance cost and increased manufacturing throughput. The ion beam transmitted along the bents section of the second path in the deceleration stage is decelerated to reduce the beam energy of the ion beam in accordance with an ion implantation recipe to be applied to the workpiece. The additional decelerating electrodes are arranged to further control the beam energy. The first intermediate multi-pole device and the output multi-pole device improves beam parallelism and beam uniformity before the scanned ion beam is used for ion implantation. The beam energy is adjusted and accelerated in accordance with the ion implantation recipe to be applied to the workpiece, so that uniform, low current, high energy ion implantation is achievable with ID scanning action. The arc chamber is operated individually while the arc chamber is turned off to provide further flexibility in current beam and/or current energy adjustment. The ion beams are modified to improve beam uniformity and/or to adjust a beam dimension.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) an ion implantation apparatus; and    (2) an ion implantation method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic top view of an ion implantation apparatus in a first mode.    Ion implantation apparatus (200)    Ion beam generator (210)    Scanning device (220)    End station (270)    Workpiece (295)