NOVELTY - Producing pseudo-Schottky photovoltaic cell (100), comprises e.g.: providing doped silicon wafer (110) having obverse side and reverse side; sintering wafer; removing second silicon-oxide layer (130) on reverse side; applying first photoresist on obverse side; depositing metal contact on reverse side; applying second photoresist on reverse side; disposing conductive paint onto obverse side; removing grid mask on obverse side to form collector grid composed of conductive paint; and attaching first and second electrical conduction leads respectively to collector grid and metal contact.    USE - The method is useful for producing a pseudo-Schottky photovoltaic cell.    ADVANTAGE - The method: is simple; avoids utilization of large volumes of harmful chemicals including hydrofluoric acid and acetone, thus reducing both the volume and cost of storage and disposal of consumed chemicals; utilizes less energy to produce pseudo-Schottky photovoltaic cell, thus reducing particulate and geothermal pollution at the utility source; and avoids the utilization of glass and photo developing chemicals.    DETAILED DESCRIPTION - Producing a pseudo-Schottky photovoltaic cell (100), comprises: providing a doped silicon wafer (110) having an obverse side and a reverse side; sintering the wafer to expose the obverse side in an oven by raising temperature to 220 degrees C and maintaining for 5 minutes, thus producing respective first and second silicon-oxide layer (130) on the obverse and reverse sides of the wafer; polishing the first silicon-oxide layer on the obverse side to uniform thickness; removing the second silicon-oxide layer on the reverse side; applying a first photoresist on the obverse side; depositing a metal contact on the reverse side, causing a third silicon-oxide layer on the obverse side; applying a second photoresist on the reverse side; removing the third silicon-oxide layer on the obverse side; sintering the wafer to expose the reverse side in the oven at 90 degrees C for 10 minutes, thus causing a fourth silicon-oxide layer on the obverse side; removing the first and second photoresists on the respective obverse and reverse sides; sintering the wafer to expose the obverse side in the oven raising to 220 degrees C and maintaining for 5 minutes; superposing a grid mask on the obverse side; disposing a conductive paint onto the obverse side; removing the grid mask on the obverse side to form a collector grid composed of the conductive paint deposited on the obverse side; and attaching first and second electrical conduction leads respectively to the collector grid and the metal contact to form the pseudo-Schottky photovoltaic cell.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a prototype pseudo-Schottky photovoltaic cell.    Pseudo-Schottky photovoltaic cell (100)    Wafer (110)    Ohmic contact (120)    Silicon-oxide layer (130)    Grid lines (140)