TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The short-circuit proof film has composition of formula (Cuf; Zn(g-w/2); Sn(h-v-w/2); 1X+4v; 2X+3w; Ch(f/2+g+2h)) (C) or (Cu(f-w); Zn(g-w); Sn(h-v); 1X+4v; 2X+3w; Ch(f/2+g+2h)) (D), and has a thickness of 10-200 nm, preferably 10-50 nm. Surface areas of defect size of greater than 1 mu m represent less than 5%, preferably less than 1% of the surface of the rear electrode opposite to the substrate. The non-active areas covered by the short-circuit proof film occupy at least 30%, preferably at least 75% of the surface areas of the defect size of greater than 1 mu m. The concentration in 1X+4 and/or 2X+3 in the absorbent layer decreases the rear electrode towards a surface of the assembly opposite to the substrate. The absorbent layer and/or short circuit proof film of the composition (C) or (D) has molar ratios of metal cations of 1X/(Sn+Zn) less than 0.5 and/or 2X/(Sn+Zn) less than 0.5.f = m-0.3 to m+0.3, where m is 2 or 4;g = n-0.3 to n+0.3, where n is 0 or 1;h = p-0.3 to p+0.3, where p is 0 or 1;v = 0 or 0.5; andw = 0-0.5.Preferred Method: The chemically depositing step is carried out by immersing the substrate covered by rear electrode in a chemical bath containing copper at an oxidation state of +2, where the chemical bath comprises an ammonia concentration of less than 4 M and a sodium hydroxide concentration of less than 0.2 M. The immersing step is carried out at a temperature of 18-25 degrees C for 1-15 minutes. The method comprises bringing the precursor film with a chalcogenide of metal cations so as to form, on the surface of the rear electrode, a continuous film with a thickness of 10-350 nm, preferably 10-50 nm. The step of bringing the precursor film comprises performing liquid deposition of chalcogenides oligomers of metal cations on the precursor film, where the chalcogenides oligomers have a structure of formula ((SnjChk)(2k-4j)-) (H), ((1X+4jChk)(2k-4j)-) (I), ((2X+3jChk)(2k-3j)-) (J), ((SnlZnqChr)(2r-41-2q)-) (K), ((Snl1X+4qChr)(2r-4l-4q)-) (L) or ((Snl2X+3qChr)(2r-4l-3q)-) (M). The dispersion of chalcogenides oligomers of metal cations has a concentration of greater than 0.05 M, preferably greater than 0.3 M. The step of depositing aqueous or hydroalcoholic dispersion of chalcogenides oligomers of metal cations comprises drying, forming the short-circuit proof film by thermal treatment, forming the absorbent layer on the surface of the short-circuit proof film, and is simultaneously performed by depositing solid liquid nanoparticle for forming the absorbent layer. The solid nanoparticles and the chalcogenides or oligomers of two metal cations are contained in a single aqueous or hydroalcoholic dispersion. The concentration of the solid nanoparticle is 20-400 g/l, preferably 60-200 g/l. A concentration of the chalcogenides oligomers of metal cations is 0.01-0.4 M, preferably 0.025-0.2 M. The single aqueous or hydroalcoholic dispersion comprises oligomers (K). The absorbent layer and the short-circuit proof film has molar ratios in metal cations such as 0.75 less than Cu(Zn+Sn) less than 1.2 and 0.8 less than Zn/Sn less than 1.4.j = 1-20;k = 1-2j+2;l, q = 1-4; andr = 1-2(l+q).