TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal mesh pattern comprises metal, metal oxide or its alloy. The metal mesh pattern comprises copper, aluminum, neodymium, molybdenum, silver, gold, chromium, titanium, nickel, iron, cobalt, zinc, tin, tungsten, iridium, indium, platinum, hafnium and/or its oxides. The metal mesh pattern has width of 0.5-100 mu m.    TECHNOLOGY FOCUS - POLYMERS - Preferred Method: The method further comprises formation of a transparent conductive material layer (50) on the upper part of a pattern layer (40), after the formation of the transparent insulation material layer. The pattern layer comprises the transparent insulation layer between the metal mesh pattern and the metal mesh pattern. The method comprises forming the transparent insulation material layer between the metal mesh patterns using negative photoresist, forming the negative photoresist layer on the transparent substrate and the metal mesh pattern, exposing surface side of the metal mesh pattern to opposite to the transparent substrate, and developing the negative photoresist layer in the area corresponding to the metal mesh pattern. The method further comprises heat-treating step prior to exposing step, where the heat-treating temperature is 50-130 degrees C. The method further comprises heat-treating step prior to developing step, where the heat-treating temperature is 100-230 degrees C. Preferred Components: The negative photoresist layer composition comprises alkali-soluble polymer resin, monomer with at least two acrylate groups, a photoinitiator, and a solvent. The negative photoresist layer composition further comprises a surfactant, a coupling agent, an oxidation stabilizer and/or a polymerization inhibitor. The transparent conductive material layer comprises metal oxide, metallic nanowire, conductive polymer and/or carbon body. The conductive film comprises a transparent substrate, a pattern layer provided on one surface of the transparent substrate, and a transparent insulation layer provided between the metal mesh pattern and the metal mesh pattern to from pattern layer, where the surface energy of the pattern layer is 25-45 N/m. The conductive film further comprises a transparent conductive material layer provided in the upper portion of the pattern layer. The conductive film further comprises a transparent conductive material layer provided between the transparent substrate and the pattern layer. The aperture ratio of the metal mesh pattern is 80-99.5%. The conductive film has total light transmittance of greater than or equal to 70%. The thickness of the metal mesh pattern is not greater than 1 mu m. The surface resistance of the pattern layer is less than or equal to 50 Omega . The taper angle of the metal mesh pattern is 0-90. The transparent insulation material layer has thickness of 2 mu m and has total light transmittance of greater than or equal to 80%. The organic layer is buffer layer comprising at least two of poly(3 4-ethylenedioxythiophene)-poly(styrenesulfonate), molybdenum oxide and/or tungsten oxide.