TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: In the method (M1), sequentially performing is provided on a reel to reel apparatus, and the method further comprises sequentially performing the vaporizing, releasing, and irradiating to build up a thickness of the film of material. The method (M1) further comprises moving the substrate during formation of the film of material, where the movement is a constant rotation, variable rotation or linear movement. In the methods, the formation of the film is provided by a heterogeneous chemical reaction between the smaller particle droplets and a portion of the surface region. The formation of the film is provided within a vacuum environment. In the method (M1): vaporizing a precursor material to form droplets of size 10-20 microns is provided in a first chamber; subjecting the droplets to a mega-sonic energy source is provided in a second chamber; and the thermal energy is provided by irradiation, which comprises irradiating the film of material using thermal energy to process the film to cause a recrystallization of the film to form larger sized crystalline materials that is provided in a third chamber, where the first chamber, the second chamber, and the third chamber are configured in a cluster-tool. In the method (M1), the second temperature is at room temperature to 300 degrees C. In the method (M1), the vaporizing is provided by a nozzle configured with a gas source to facilitate vaporization of the precursor material, and the method further comprises: directing the vaporized precursor material to a surface coupled to the mega-sonic energy source, or to a cone shaped surface coupled to the mega-sonic energy source; and subjecting the smaller droplet particles to a convective force to evenly deposit the film of material overlying the surface region of the substrate member. In the method (M2) the movement is a constant rotation or a variable rotation. Preferred Components: The film is of material comprising a zinc oxide, zinc sulfide, or a diamond like coating. The film of material has a thickness of 10-100 nm. The substrate member is a plastic, metallic, semiconductor and/or insulator. EXAMPLE - No suitable example given.