NOVELTY - A composition contains alkoxide compound(s) (I), compound(s) chosen from titanium compound, zirconium compound and silicon alkoxide, solvent, and resin.    USE - Composition is used for forming passivation layer on semiconductor substrate for manufacturing solar cell (all claimed).    ADVANTAGE - The composition has excellent storage stability, and enables formation of passivation layer having high refractive index by simple method.    DETAILED DESCRIPTION - A composition contains alkoxide compound(s) of formula (I), compound(s) chosen from titanium compound, zirconium compound and silicon alkoxide, solvent, and resin.    M=Nb, Ta, V, Y or Hf;    R1=1-8C alkyl or 6-14C aryl;and    m=1-5.    INDEPENDENT CLAIMS are included for the following:    (1) passivation layer-containing semiconductor substrate, which has a semiconductor substrate, heat-treated substance layer of the passivation composition provided in portion(s) of semiconductor substrate;    (2) manufacture of passivation layer-containing semiconductor substrate, which involves providing the passivation layer (6) on one portion of a semiconductor substrate, forming composition layer, heat-processing composition layer and forming passivation layer;    (3) solar cell element, which has p-type layer and n-type layer, semiconductor substrate by which pn junction is carried out, passivation layer formed on whole surface of semiconductor substrate, or heat-treated substance layer of passivation layer composition formed on at least one portion, electrode provided on layer(s) of p-type layer and n-type layer; and    (4) manufacture of solar cell element, which involves providing composition for passivation layer to portion(s) of semiconductor substrate by which pn junction is carried out, forming composition layer, heat-processing composition layer and forming passivation layer, forming electrode on layer(s) of p-type layer and n-type layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view explaining the manufacture of solar cell element.    P-type semiconductor substrate (1)    Diffused layers (2,4)    Anti-reflective film (3)    Back surface electrode (5)    Passivation layer (6)    Surface electrode (7)