NOVELTY - A method to deposit copper-indium-gallium-selenide thin film involves providing a chamber (C1), providing a substrate (226), providing metallic target, providing a sodium-doping source, reducing pressure within the chamber (C1), adding sputtering gas into the chamber (C1), sputtering the elements and/or compounds from the metallic targets to the substrate, providing a chamber (C2), transferring the substrate from chamber (C1) to chamber (C2), providing selenium vapor into the chamber (C2), and performing vapor deposition as to allow the selenium to be deposited on the substrate.    USE - Method for depositing copper-indium-gallium-selenide thin film used for solar panel construction.    ADVANTAGE - The method enables deposition of copper-indium-gallium-selenide thin film having high quality and enables economic production of solar cell.    DETAILED DESCRIPTION - A method to deposit copper-indium-gallium-selenide thin film involves providing a chamber (C1), providing a substrate and placing the substrate inside the chamber (C1), providing metallic target, placing the metallic targets inside the chamber (C1), providing a sodium-doping source, reducing pressure within the chamber (C1) to a pressure less than lxlO-6 Torr, adding sputtering gas into the chamber (C1) after reducing pressure within the chamber (C1) to a pressure less than lxlO-6 Torr, until the pressure in the chamber is increased to 100 mTorr or less, sputtering the elements and/or compounds from the metallic targets to the substrate, providing a chamber (C2), transferring the substrate from chamber (C1) to chamber (C2) after the substrate is sputtered with the elements, providing selenium vapor into the chamber (C2), and performing vapor deposition as to allow the selenium to be deposited on the substrate. The metallic target comprises elements and/or compounds chosen from copper, copper-gallium, indium, copper-indium and copper-indium-gallium. An INDEPENDENT CLAIM is included for solar cell apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of sputtering chamber and selenization chamber for depositing copper-indium-gallium-selenide thin film.    Sputtering chamber (200)    Selenization chamber (202)    Heater (206)    Substrate (226)    Sputtering target (230)