NOVELTY - A chalcogenide thin film solar energy battery manufacturing method involves preparing alkali element precursor solution, adding a viscosity modifier, stirring the solution to obtain stable precursor solution, and preparing a bottom electrode thin film on a substrate. A bottom electrode is applied with metal chalcogenide film to obtain a reaction layer and placed in a furnace to form crystalline chalcogenide semiconductor thin film. The high-purity chalcogenide solution is prepared followed by preparing a buffer layer and a window layer and placing an upper electrode on the buffer layer.    USE - Method for manufacturing a chalcogenide thin film solar energy battery.    ADVANTAGE - The method enables manufacturing the chalcogenide thin film solar energy battery in a simple and easy manner.    DETAILED DESCRIPTION - A chalcogenide thin film solar energy battery manufacturing method involves preparing alkali element precursor solution by taking high pure alkali metal, alkali compound or chalcogenide element powder such as sulfur and selenium having purity of 99.99%, and solvent such as ketones, alcohols, amines and other organic solvents, mixing and adding with viscosity modifier, and stirring the material at room temperature for more than 12 hours to obtain stable precursor solution, preparing bottom electrode thin film on a substrate using conventional high vacuum gas phase process such as heat evaporation, magnetron sputtering and molecule beam epitaxy. The bottom electrode is applied with a metal or a metal chalcogenide film by conventional high vacuum gas phase process such as heat evaporation, magnetron sputtering and molecule beam epitaxy, to obtain a reaction layer and placed in normal temperature. The high-purity chalcogenide solution is prepared by using conventional film-forming process such as spray deposition, ink jet printing, die coating, or knife coating, and baked at low temperature to form solid thin film. The reaction layer is placed in a high temperature furnace at 200-1000 degrees C for 5-60 minutes to obtain the crystalline chalcogenide semiconductor thin film followed by preparing semiconductor thin film chalcogenide buffer layer using chemical bath deposition method and preparing a window layer and an upper electrode on the upper buffering layer using conventional high vacuum gas phase process such as heat evaporation, magnetron sputtering and molecule beam epitaxy, where the high pure alkali metal and alkali compound are added to control the alkali ion and metal ion ratio in absorption layer of 0.1-5%, the concentration of chalcogenide is 0.1-5 M, the substrate is a non-alkali glass, rigid and flexible metallic material or a polymeric film, and/or transparent conductive titanium oxide, and the metal is copper, zinc, tin, indium and gallium and thickness of the reaction layer is 0.6-2 micrometers.