NOVELTY - Fabrication of high-bandgap gallium-indium phosphide-containing photovoltaic converter involves providing a crystalline growth structure having a growth surface with lattice constant which same as relaxed lattice constant of gallium-indium-phosphide alloy which has a bandgap more than the gallium-indium phosphide, growing a front contact layer on the growth surface of crystalline growth structure, growing a gallium-indium-phosphide photovoltaic cell (71) on the front contact layer, and growing a back contact layer on the gallium-indium-phosphide photovoltaic cell.    USE - Fabrication of high-bandgap gallium-indium phosphide-containing photovoltaic converter used for solar cell.    ADVANTAGE - The method provides gallium-indium phosphide-containing photovoltaic converter having high bandgap.    DETAILED DESCRIPTION - Fabrication of high-bandgap gallium-indium phosphide-containing photovoltaic converter involves providing a crystalline growth structure having a growth surface with lattice constant which is same as relaxed lattice constant of gallium-indium-phosphide alloy which has a bandgap more than the gallium-indium phosphide (Ga0.51In0.49P), growing a front contact layer on the growth surface of crystalline growth structure, growing a gallium-indium-phosphide photovoltaic cell on the front contact layer, and growing a back contact layer on the gallium-indium-phosphide photovoltaic cell. The crystalline growth structure contains graded gallium-indium phosphide structure with a base surface having a lattice constant which is same as the gallium arsenide. The growth surface contains gallium-indium phosphide (GaAs1-xPx) alloy. The gallium-indium-phosphide photovoltaic cell has a relaxed lattice constant which is same as the lattice constant of the growth surface.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the high-bandgap gallium-indium phosphide-containing photovoltaic converter.    Gallium-indium-phosphide photovoltaic cell (71)    Anti-reflection coating (78)    Transparent handle (80)    Back surface confinement layer (84)    Parent substrate (97)