NOVELTY - The optoelectronic device comprises: a first electrode; a quantum dot layer (454) that is disposed on the first electrode and comprises quantum dots; a fullerene layer (452) disposed directly on the quantum dot layer, where the quantum dot layer and the fullerene layer form an electronic heterojunction; and a second electrode disposed on the fullerene layer. The first electrode or the second electrode consists of conductive oxides, metals, metal alloys, metal-inclusive compounds, carbon nanotubes, and conductive polymers.    USE - The optoelectronic device is useful as a photovoltaic device (solar cells), a photodetector, electroluminescent devices such as LEDs and laser diodes, and a thermovoltaic cell.    ADVANTAGE - The optoelectronic device has improved material properties and performance-related parameters including more efficient charge separation, greater charge carrier mobility, longer diffusion lengths, higher quantum efficiencies and sensitivity tunable to a desired range of electromagnetic spectra, can be economically, reliably and simply fabricated, and exhibits a sensitivity to a broad spectral range including visible and infrared or UV and visible and IR, to enable simultaneous detection in the range.    DETAILED DESCRIPTION - The optoelectronic device comprises: a first electrode; a quantum dot layer (454) that is disposed on the first electrode and comprises quantum dots; a fullerene layer (452) disposed directly on the quantum dot layer, where the quantum dot layer and the fullerene layer form an electronic heterojunction; and a second electrode disposed on the fullerene layer. The first electrode or the second electrode consists of conductive oxides, metals, metal alloys, metal-inclusive compounds, carbon nanotubes, and conductive polymers. The quantum dots consist of visible light-sensitive quantum dots, infrared-sensitive quantum dots, and UV-sensitive quantum dots. The quantum dot layer has a thickness of 5 nm to 5 microns. The quantum dots comprise a set of first quantum dots and a set of second quantum dots. The first quantum dots have a first average size and a first composition, and the second quantum dots have a second average size different from the first average size and a second composition different from the first composition. The fullerene layer has a thickness of 3-300 nm. The optoelectronic device further comprises a hole blocking layer (576) disposed on the fullerene layer, an electron blocking layer (572) disposed between the first electrode and the quantum dot layer, and an exciton blocking layer disposed on the fullerene layer or on the first electrode. The second electrode is disposed on the hole blocking layer. The electron blocking layer comprises a discontinuous layer and a pattern of electron blocking material. The quantum dot layer exhibits a charge carrier mobility of greater than 1x 10-4 cm2/V-seconds to 10 cm2/V-seconds and an interparticle spacing of less than or equal to 2 nm, and is a chemically treated quantum dot layer that exhibits increased charge carrier mobility relative to an untreated quantum dot layer. The optoelectronic device has a power conversion efficiency of 4.5% when illuminated by an incident white light beam of 100 mW/cm2. An INDEPENDENT CLAIM is included for a method for fabricating an optoelectronic device.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross sectional view of a photodiode device.    Fullerene layer (452)    Quantum dot layer (454)    Substrate (464)    Electron blocking layer (572)    Hole blocking layer. (576)