TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The sulfate based anionic surfactant comprises ammonium dodecylsulfate, ammonium laureth sulfate, sodium dodecyl sulfate, sodium lauryl sulfate, sodium laureth sulfate, potassium dodecylsulfate, potassium laureth sulfate, ammonium octyl sulfate, sodium octyl sulfate, potassium octyl sulfate, ammonium hexyl sulfate, sodium hexyl sulfate, potassium hexyl sulfate, ammonium stearyl sulfate, sodium stearyl sulfate and potassium stearyl sulfate. The sulfate based anionic surfactant is present in an amount of 0.000001-1 wt.%. The composition further comprises an alkali compound, polysaccharide, a monomer, a polymer, and a cyclic compound. The monomer has one of nitrogen, oxygen and sulfur atom in the ring structure. The alkali compound includes potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethyl ammonium and tetrahyroxy ethyl ammonium. The polysaccharide includes glucan compound, fructan compound, galactan compound and their metal salts. The glucan compound includes cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethylcellulose, ethylcellulose, methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, alpha -cyclodextrin, beta -cyclodextrin, gamma -cyclodextrin, hydroxypropyl beta -cyclodextrin, methyl- beta -cyclodextrin, dextran, dextran sulfate sodium, saponin, glycogen, zymosan, lentinan, and their metal salts. The monomer includes N-vinyl pyrrolidone, N-acryloyl morpholine, N-vinyl succinimide, N-acryloxy succinimide, N-vinylcaprolactam, and N-vinylcarbazole. The polymer has an average molecular weight of 1000-1000000, and a boiling point of greater than or equal to 100 degrees C. An amount of the polymer is 10-12 wt.% to 1 wt.%. The cyclic compound has a boiling point of greater than or equal to 100 degrees C and solubility of 6-16. Preferred Method: The etching method comprises spraying the composition on the wafer at 50-100 degrees C for 30 seconds to 60 minutes, and precipitating the wafer at 50-100 degrees C for 30 seconds to 60 minutes. EXAMPLE - No suitable example given.