NOVELTY - Wet-chemical synthesis method of producing group I-III-VI2 semiconductor material, comprises forming solution containing organic solvent, at least one group I precursor comprising at least one compound of at least one group I element, and at least one group III precursor comprising at least one compound of at least one group III element, where group I precursor is present in solution at less than 120% of stoichiometric ratio of group I element, and group III precursor is present in solution at greater than 55% of stoichiometric ratio of group III element.    USE - The wet-chemical synthesis method is useful for producing group I-III-VI2 semiconductor material (claimed) which is used in photovoltaic cells, solar cells and solar panels.    ADVANTAGE - The wet-chemical synthesis method provides group I-III-VI2 semiconductor material in a cost effective manner.    DETAILED DESCRIPTION - Wet-chemical synthesis method of producing group I-III-VI2 semiconductor material, comprises forming solution containing organic solvent, at least one group I precursor comprising at least one compound of at least one group I element, and at least one group III precursor comprising at least one compound of at least one group III element, where group I precursor is present in solution at less than 120% of stoichiometric ratio of group I element in group VI-III-VI2 semiconductor material, and group III precursor is present in solution at greater than 55% of stoichiometric ratio of group III element in group I-III-VI2 semiconductor material. An INDEPENDENT CLAIM is also included for a photovoltaic or opto-electronic device comprising a substrate (102) layer, and an absorber layer overlying the substrate layer, where the absorber layer consisting of semiconducting photo-absorptive nanocrystals of a group Ib-IIIa-VI2, a group II-VI, a group III-V, or a group I2-II-IV-VI4 semiconducting p-type material and less than 10 wt.% of at least one solvent, the absorber layer having a smooth, ridged or rough surface.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of CIGS photovoltaic cell.    Copper indium gallium selenide cell (101)    Substrate (102)    Boundary layers (103)    Back contact layer (104)    Ohmic junction (105)