TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Apparatus: In the Czochralski growth apparatus, the particle blocking device is a particle shield at least partially covering the inner growth zone of the crucible. The particle blocking device is a particle shield positioned on the wall of the crucible projecting into the inner growth zone, a particle shield positioned at the opening of the wall of the crucible, a particle shield positioned at least partially around or within the delivery point of the feeder, and/or a sleeve positioned within the feeder, the sleeve extending at least partially below the delivery point of the feeder and having a lower edge positioned within the outer feed zone of the crucible. The apparatus further comprises a thermally-insulated shield positioned above the inner growth zone of the crucible, where the thermally-insulated shield and the wall are separated by a gap, and where the particle blocking device substantially prevents the solid feedstock from passing through the gap. The particle blocking device is a particle shield positioned on the wall of the crucible projecting into the inner growth zone extending to a position adjacent to the thermally-insulated shield. The thermally-insulated shield has an inverse conical shape. The particle blocking device is an insulated housing circumferentially positioned around the thermally-insulated shield, where the insulated housing is positioned at least partially above the outer feed zone. The insulated housing is positioned at least partially above the inner growth zone, or externally positioned around the thermally-insulated shield. The thermally-insulated shield has a lower edge positioned within the inner growth zone below an upper edge of the wall, and where the insulated housing is positioned around the lower edge of the thermally-insulated shield. The particle blocking device comprises quartz, graphite, silicon carbide coated graphite, or silicon carbide. The solid feedstock further comprises at least one dopant material, where the dopant material is phosphorus, boron, gallium, indium, aluminum, arsenic, or antimony. The inner growth zone and the outer feed zone comprise a solid precharge comprising silicon to be melted in it. The solid precharge in the inner growth zone, the outer feed zone, or both further comprises at least one dopant material. The Czochralski growth apparatus is a continuous Czochralski growth apparatus. Preferred Method: In the method of Czochralski growth of the silicon ingot, the particle blocking device is a particle shield at least partially covering the inner growth zone of the crucible; a particle shield positioned on the wall of the crucible projecting into the inner growth zone; a particle shield positioned at the opening of the wall of the crucible; a particle shield positioned at least partially around or within the delivery point of the feeder; and/or a sleeve positioned within the feeder, the sleeve extending at least partially below the delivery point of the feeder and having a lower edge positioned within the outer feed zone of the crucible. The Czochralski growth apparatus further comprises a thermally-insulated shield positioned above the inner growth zone of the crucible. The thermally-insulated shield and the wall are separated by a gap, and where the particle blocking device substantially prevents the solid feedstock from passing through the gap. The particle blocking device is a particle shield positioned on the wall of the crucible projecting into the inner growth zone extending to a position adjacent to the thermally-insulated shield. The thermally-insulated shield has an inverse conical shape. The particle blocking device is an insulated housing circumferentially positioned around the thermally-insulated shield, where the insulated housing is positioned at least partially above the outer feed zone. The insulated housing is positioned at least partially above the inner growth zone. The insulated housing is externally positioned around the thermally-insulated shield. The thermally-insulated shield has a lower edge positioned within the inner growth zone below an upper edge of the wall, and where the insulated housing is positioned around the lower edge of the thermally-insulated shield. The particle blocking device comprises quartz, graphite, silicon carbide coated graphite, or silicon carbide. The solid feedstock further comprises at least one dopant material. The inner growth zone and the outer feed zone comprise a solid precharge comprising silicon to be melted in it. The solid precharge in the inner growth zone, the outer feed zone, or both further comprises at least one dopant material.