NOVELTY - Producing inorganic thin film dielectric material layer comprises: providing substrate (510); depositing first inorganic thin film dielectric material layer (530) on substrate using atomic layer deposition process within atomic layer deposition (ALD) system; treating first inorganic thin film dielectric material layer after its deposition by at least removing substrate from ALD system to a different environmental condition; providing patterned deposition inhibiting material layer on substrate; and selectively depositing second inorganic thin film dielectric material layer (540) on substrate.    USE - The method is useful for producing an inorganic thin film dielectric material layer (claimed) which is useful for manufacturing thin film transistors and photovoltaics.    ADVANTAGE - The method: enables production of relatively inexpensive circuits containing thin film transistors with improved performance; reduces the reliance on high resolution or very fine alignment features during the manufacturing process; and provides high quality dielectric without the use of a thick layer, and in a simple manner.    DETAILED DESCRIPTION - Producing an inorganic thin film dielectric material layer comprises: providing a substrate (510); depositing a first inorganic thin film dielectric material layer (530) on the substrate using an atomic layer deposition process within an atomic layer deposition (ALD) system; treating the first inorganic thin film dielectric material layer after its deposition by at least removing the substrate from the ALD system to a different environmental condition than that experienced in the ALD system; providing a patterned deposition inhibiting material layer on the substrate; and selectively depositing a second inorganic thin film dielectric material layer (540) on a region of the substrate, where the deposition inhibiting material layer is not present using an atomic layer deposition process within the ALD system.    DESCRIPTION OF DRAWING(S) - The figure illustrates a cross-sectional view of a thin film transistor.    Substrate (510)    Gate (520)    First inorganic thin film dielectric layer (530)    Second inorganic thin film dielectric layer (540)    Semiconductor layer (570)