NOVELTY - The device has a front surface field structure comprising a crystalline layer (154) formed on a crystalline substrate. The front surface field structure includes a noncrystalline layer (156) formed on the crystalline layer, where the crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. The crystalline layer includes an active doping level higher than an active doping density of the substrate. The crystalline layer includes a thickness less than a diffusion length of minority carriers in the crystalline layer.    USE - Interdigitated back contact (IBC) heterojunction photovoltaic device for an integrated circuit chip, light sensitive device, calculator, solar powered light and an IBC solar cell or panel utilized to provide power to electronic devices, homes, buildings and vehicles.    ADVANTAGE - The p-doped interlayer includes a narrow bandgap material that is provided between a hydrogenated amorphous silicon and a transparent conductive oxide at emitter contacts so as to improve carrier transport. The device allows thinner layers for layers of a front surface field (FSF) junction as compared to back side of cell so as to reduce absorption loss.    DETAILED DESCRIPTION - The crystalline substrate is an n-type c-silicon substrate (152). The crystalline and the noncrystalline layers are made of hydrogenated silicon with 5-40 atomic percent hydrogen. The device provides a p-doped noncrystalline layer made of hydrogenated silicon and a p-doped interlayer (202) made of hydrogenated germanium.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photovoltaic device including a front surface field contact with a p-doped crystalline layer and a p-doped noncrystalline layer, and an interdigitated back contact including a p-doped layer formed on an interlayer between a first p-doped layer and a transparent electrode and an n-doped crystalline layer in contact with the substrate.    Back surface of emitter contacts (118)    Anti-reflection coating layer (124)    N-type c-silicon substrate (152)    Crystalline layer (154)    Noncrystalline layer (156)    P-doped interlayer (202)