NOVELTY - Use of a composition comprising a diethylzinc and a tricyclic aryl compound (X), in a process for depositing a zinc oxide film, is claimed.    USE - The composition is useful in a chemical vapor deposition for depositing a zinc oxide film, where the zinc oxide film is a conductive transparent oxide film, which is useful in the manufacture of a micromorph solar cell, a flat panel display and LED (all claimed).    ADVANTAGE - The composition is non-toxic, and ensures effective deposition of zinc oxide film over large areas at low temperature, in a cost-effective manner.    DETAILED DESCRIPTION - Use of a composition comprising a diethylzinc and a tricyclic aryl compound of formula (X), in a process for depositing a zinc oxide film, is claimed.    R1 = H, alkyl, an olefin conjugated with aromatic ring, or optionally substituted 1-12C aryl.    An INDEPENDENT CLAIM is included for depositing the zinc oxide film, comprising (a) positioning a substrate in a deposition chamber, (b) vaporizing the composition, and (c) introducing, into the deposition chamber, a gaseous mixture comprising an oxygen source, such as water or an alcohol optionally containing less than 5C, and a doping product consisting of trimethylaluminum, triethylaluminum, tri-propylaluminum, diethyl ethoxide, dimethyl isopropoxide, tris(acetylacetonate) aluminum, tris(acetate) aluminum, tris(tetramethylheptadionate) aluminum, aluminum alkoxide, aluminum chloride, tris(dimethylamino) aluminum, trimethylgallium, triethylgallium, tri-propylgallium, diethylgallium ethoxide, dimethyl gallium, isopropoxide, tris(acetylacetonate)gallium, tris(acetate)gallium, tris(tetramethylheptadionate)gallium, gallium alkoxide, gallium chloride, tris(dimethylamino)gallium, diborane, trimethylborane, triethylborane, trimethylborate, tri-isopropylborate and 1,3,5-trimethylborazine. ORGANIC CHEMISTRY - Preferred Components: The diethylzinc is present at 95-99.9 wt.%, preferably 99.5 wt.%. (X) is present at 0.1-5 wt.%, preferably 0.5 wt.%. (X) is acenaphthylene. INORGANIC CHEMISTRY - Preferred Components: The zinc oxide is doped with aluminum, boron, gallium, indium, yttrium, scandium, fluorine, vanadium, silicon, germanium, titanium, zirconium or hafnium.