NOVELTY - Preparation of double-layer textured zinc oxide thin film involves mixing zinc oxide powder and metal (M) oxide powder, grinding, sintering, depositing zinc oxide-based thin film on a substrate using obtained ceramic target by magnetron sputtering method, immersing the zinc oxide thin film in aqueous ammonia, forming a layer (A) on the surface of the thin film, then depositing zinc oxide-based thin film on layer (A), immersing the thin film in hydrochloric acid, hydrogen fluoride, sodium hydroxide or nitric acid solution, and forming layer (B) on the surface of the thin film.    USE - Preparation of double-layer textured zinc oxide thin film used as front electrode of solar cell.    ADVANTAGE - The double-layer textured zinc oxide thin film effectively scatters the sunlight, improves light utilization efficiency of the solar cell device, and is economically prepared by simple process.    DETAILED DESCRIPTION - Preparation of double-layer textured zinc oxide thin film involves mixing pure zinc oxide powder and metal (M) oxide powder, grinding the powder mixture, sintering the powder at 1000-1500 degrees C, depositing zinc oxide-based thin film on a substrate using obtained ceramic target as target by magnetron sputtering method at 25-500 degrees C for 10-90 minutes with distance between substrate and target of 80 mm under vacuum degree of growth chamber of 2x 103 Pa or more, flow rate of argon gas in the growth chamber of 20-80 sccm, pressure of 0.1-10 Pa, and sputtering power of 50-200 W, immersing the zinc oxide thin film in 0.5-6 wt.% aqueous ammonia or sodium carbonate solution for 1-30 minutes, forming a layer (A) on the surface of the thin film, then depositing zinc oxide-based thin film on the obtained layer (A) by magnetron sputtering method, immersing the obtained thin film in 0.1-1 wt.% hydrochloric acid, hydrogen fluoride, sodium hydroxide or nitric acid solution for 1-60 seconds, and forming layer (B) on the surface of the thin film. The double-layer textured zinc oxide thin film contains zinc-metal (M) oxide (Zn1-xMxO, where M is aluminum, gallium, indium, boron or fluorine, and x is more than 0 and less than 0.10).