TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The carbonized catalyst is nickel (preferred), cobalt, iron, platinum, gold, aluminum, chromium, copper, magnesium, manganese, molybdenum, rhodium, silicon, tantalum, titanium, tungsten, uranium, vanadium or zirconium. The carbonized catalyst layer has a thickness of 100-300 nm. Preferred Method: The carbonized catalyst layer is prepared by sputtering method.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The substrate is glass, silicon, silica or plastic. The concentration of the fullerene derivative solution is 0.1-1 wt.%. The fullerene derivative in the step (b) is PC60BM ((6,6)-phenyl-C61-butyric acid methyl ether) (preferred), bis-PC60BM, tris-PC60BM, (6,6)-phenyl C71 butyric acid methyl ester (PC70BM), (6,6)-phenyl C84 butyric acid methyl ester (PC84BM), (6,6)-phenyl C61 butyric acid methyl ester (PC60BB), PC60BO, PC60BD, PC60BC, triphenylamine (TPA)-PC60BM, 9,9-dimethylfluorene (MF)-PC60BM, indene-C60 monoadduct (IC60MA), indene-C70 monoadduct (IC70MA) or C60. Preferred Method: The lamination of fullerene derivative solution is carried out by spin coating method at a speed of 300-5000 revolutions per minute for 30-60 seconds, where the fullerene derivative solution has a thickness of 5-10 nm. The heat treatment is carried out at 800-1000 degrees C under air atmosphere or vacuum atmosphere for 5-30 minutes with a heating rate of 20-50 degrees C/minute. EXAMPLE - Graphene film was produced by forming nickel layer on silicon dioxide/silicon substrate to a thickness of 300 nm by sputtering process. The resulting substrate was laminated with fullerene derivative solution (prepared by mixing 0.005 g PCBM with 1 g chlorobenzene) by spin coating process to a thickness of 5-10 nm at a speed of 5000 revolutions per minute for 40 seconds. The resulting sequentially arranged silicon dioxide/silicon substrate/nickel layer/fullerene derivative solution layer stacked laminate was subjected to heat treatment at 800 degrees C for 5 minutes at a heating rate of 20-50 degrees C/minute to obtain graphene film, which was cooled at a rate of 50 degrees C/minute.