NOVELTY - The package has a cap layer (107) located on a dielectric layer (102) and filled into an opening (103) formed in the dielectric layer for exposing a conducting pad (104a) of a conducting pad structure (104). A hole (106) extends between surfaces (100a, 100b) of a semiconductor substrate (100) i.e. silicon wafer, and exposes the conducting pad. An insulating layer (108) is located on a sidewall of the hole, and a conducting layer (110) is located on the insulating layer on the sidewall of the hole, where the conducting layer electrically contacts with the conducting pad structure.    USE - Semiconductor chip package for an electronic product. Uses include but are not limited to active or passive devices or electronic components with digital or analog circuits, such as optoelectronic devices, micro electro mechanical systems (MEMS), micro fluidic systems, and physical sensors for detecting heat, light, or pressure, image sensor devices, LEDs, solar cells, RF circuits, accelerators, gyroscopes, micro-actuators, surface acoustic wave devices, and ink printer heads.    ADVANTAGE - The dielectric layer opening is filled with the cap layer, which directly contacts the conducting pad structure and a bottom surface of the conducting pad, so that formation of bubbles in the subsequent bonding process is avoided, thus ensuring that the cap layer supports the conducting pad structure to ensure that the conducting pad structure is not broken in the subsequent chip package process or when the finished product of the chip package is operational, and hence effectively improving the reliability of the chip package.    DETAILED DESCRIPTION - The cap layer is made of metal material, ceramic material, or polymer material. An INDEPENDENT CLAIM is also included for a method for forming a chip package.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a chip package.    Semiconductor substrate (100)    Surfaces of semiconductor substrate (100a, 100b)    Dielectric layer (102)    Opening (103)    Conducting pad structure (104)    Conducting pads (104a-104c)    Hole (106)    Cap layer (107)    Insulating layer (108)    Conducting layer (110)