TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The metal-containing precursor comprises a metal selected from Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Au, Ag, Cu, a Group I metal, a Group II metal, a Group III metal and/or a Group IV metal, and the metal-containing precursor is selected from a metal, an alkylated metal compound, a metal alkoxide, a metal carboxylate, a metal nitrate, a metal chlorate, a metal sulfate, a metal acetylacetonate, a metal halide, a metal cyanide, a metal hydroxide, a metal oxide, and/or a metal peroxide. Preferably metal-containing precursor is selected from palladium acetate, palladium chloride, tetrakis(triphenylphosphine)palladium, palladium acetylacetonate, platinum chloride, platinum acetylacetonate, tetrakis(triphenylphosphine)platinum, dichloro(ethylenediamine)platinum, nickel chloride, nickel acetate, nickel sulfide, nickel sulfate, nickel nitrate, nickel acetylacetonate, cobalt chloride, cobalt carbonyl, cobalt acetate, cobalt nitrate, cobalt acetylacetonate, cobalt sulfate, chloro(1,5-cyclooctadiene)rhodium dimer, rhodium acetylacetonate, rhodium chloride, rhodium nitrate, iridium acetylacetonate, iridium chloride, iron acetate, iron chloride, iron acetylacetonate, iron nitrate, ruthenium chloride, gold chloride, trichloro(pyridine)gold, silver nitrate, silver chloride, silver acetate, silver carbonate, silver cyanate, copper chloride, copper sulfate, copper acetate, dimethyl zinc, diethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, dimethyl cadmium, diethyl cadmium, cadmium acetate, cadmium acetylacetonate, cadmium iodide, cadmium bromide, cadmium chloride, cadmium fluoride, cadmium carbonate, cadmium nitrate, cadmium oxide, cadmium perchlorate, cadmium phosphide, cadmium sulfate, mercury acetate, mercury iodide, mercury bromide, mercury chloride, mercury fluoride, mercury cyanide, mercury nitrate, mercury oxide, mercury perchlorate, mercury sulfate, lead acetate, lead bromide, lead chloride, lead fluoride, lead oxide, lead perchlorate, lead nitrate, lead sulfate, lead carbonate, tin acetate, tin bisacetylacetonate, tin bromide, tin chloride, tin fluoride, tin oxide, tin sulfate, germanium tetrachloride, germanium oxide, germanium ethoxide, trimethyl gallium, triethylgallium, gallium acetylacetonate, gallium-3-chloride, gallium fluoride, gallium oxide, gallium nitrate, gallium sulfate, indium acetate, indium hydroxide, indium chloride, indium oxide, indium nitrate, indium sulfate, thallium acetate, thallium acetylacetonate, thallium chloride, thallium oxide, thallium ethoxide, thallium nitrate, thallium sulfate, and/or thallium carbonate. The first precursor or second precursor is selected from a Group V and a Group VI precursor. The Group V or Group VI precursor is selected from hexanethiol, octanethiol, decanethiol, dodecanethiol, hexadecanethiol, mercaptopropylsilane, sulfur-trioctylphosphine, sulfur-tributylphosphine, sulfur-triphenylphosphine, sulfur-trioctylamine, trimethylsilylsulfur, ammonium sulfide, sodium sulfide, selenium-trioctylphosphine, selenium-tributylphosphine, selenium-triphenylphosphine, tellurium-tributylphosphine, tellurium-triphenylphosphine, tristrimethylsilylphosphine, tris(dimethylamino)phosphine, triethylphosphine, tributylphosphine, trioctylphosphine, triphenylphosphine, tricyclohexylphosphine, arsenic oxide, arsenic chloride, arsenic sulfate, arsenic bromide, arsenic iodide, nitrous oxide, nitric acid, and/or ammonium nitrate. The nanocrystal is selected from a metal nanocrystal and a semiconductor nanocrystal, where the metal nanocrystal comprises a metal selected from Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Au, Ag and/or Cu, and the semiconductor nanocrystal is at least one compound selected from a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV compound and/or a Group I-III-VI compound. The Group II-VI compound is selected from a binary element compound (preferably CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and/or MgS); a ternary element compound (preferably CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and/or MgZnS); and a quaternary element compound (preferably HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and/or HgZnSTe). The Group III-V compound semiconductor is selected from a binary element compound (preferably GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and/or InSb); a ternary element compound (preferably GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and/or GaAlNP); and a quaternary element compound (preferably GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and/or InAlPSb). The Group IV-VI compound is selected from a binary element compound (preferably SnS, SnSe, SnTe, PbS, PbSe, and/or PbTe); a ternary element compound (preferably SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, and/or SnPbTe); and a quaternary element compound (preferably SnPbSSe, SnPbSeTe, and/or SnPbSTe). The Group IV compound is selected from a singular element compound (preferably Si and/or Ge), and a binary element compound (preferably SiC, and/or SiGe). The nanocrystal to which the ligand compound is coordinated has a solvent content of less than or equal to 20 wt.% based on the total wt. of the nanocrystal and an organic material coordinated to it, where the organic material comprises the ligand compound and the solvent. The nanocrystal has a quantum efficiency of greater than or equal to 40%, a full width at half maximum of a light emitting spectrum of less than or equal to 50 nanometers, and a size distribution of less than or equal to 10%.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Method: The thermal decomposition reaction is performed at greater than or equal to 180 degrees C. The thermal decomposition reaction is performed at a pressure of greater than or equal to 2 bar. The method further involves adding a first nanocrystal to a mixture of the first precursor, ligand compound, and second precursor, performing the thermal decomposition reaction in the presence of the first nanocrystal to prepare a synthesized nanocrystal, where the synthesized nanocrystal comprises a core of the first nanocrystal and a shell part of a second nanocrystal disposed on the core, and the first nanocrystal is selected from a metal nanocrystal and a semiconductor nanocrystal. The method further involves adding a non-solvent to a product of the thermal decomposition reaction and separating a nanocrystal to which the ligand compound is coordinated. Preferred Components: The solvent is selected from less than or equal to 10C alkane, less than or equal to 9C cycloalkane, 6-12C aromatic hydrocarbyl, halogenated hydrocarbyl, ether, heteroaromatic cyclic compound, less than or equal to 4C carboxylic acid, ketone, sulfoxide, amide, and/or less than or equal to 6C alkanenitrile compound (preferably pentane, hexane, heptane, octane, nonane, decane, benzene, toluene, xylene, ethylbenzene, butylbenzene, diethylether, dibutylether, dichloromethane, chloroform, carbon tetrachloride, tetrachloroethylene, ethylacetate, butylacetate, and/or methylethylketone). The ligand compound is selected from RCOOH, RNH2, (R)2NH, (R)3N, RSH, (R)3PO, (R)3P, ROH, or RCOOR'. The non-solvent is selected from acetone, ethanol, butanol, isopropanol, ethanediol, water, tetrahydrofuran, dimethylsulfoxide, diethylether, formaldehyde, acetaldehyde, and/or ethylene glycol.R and R'=1-24C alkyl and/or 5-20C aryl. EXAMPLE - About 1.6 mmol of indium palmitate (In(CH3(CH2)14CO2)3) and 80 ml of octane were mixed, and the mixture was injected into a pressurized reactor. The pressurized reactor was sealed, and oxygen and air in the reactants and the pressurized reactor were removed using a vacuum pump for 5 minutes. Next, nitrogen was injected into the reactor, the temperature of which was then increased up to 100 degrees C. When the reactor has a temperature of 100 degrees C, an auxiliary reactor was filled with a solution prepared by mixing 0.8 mmol of tris(trimethylsilyl)phosphine ((TMS)3P) and 4 ml of trioctylphosphine (TOP), and was charged with nitrogen to have a pressure of 2 bar, and by using such pressure difference, the (TMS)3P solution was rapidly injected into the pressurized reactor. After injecting the (TMS)3P solution, the reactor was pressurized with nitrogen to have a pressure of 5 bar and was heated to have a temperature of 180 degrees C to conduct a reaction for 1 hour. The reactants were stirred at 700 revolutions per minute (rpm) throughout the reaction. The InP semiconductor nanocrystal was separated by centrifugation. Acetone or ethanol was added to the solution including the nanocrystals at room temperature to remove an organic material. The resulting solution was subjected to centrifugation for 10 minutes to prepare InP semiconductor crystals as a precipitate. The semiconductor nanocrystals as prepared was subjected to a thermogravimetric analysis where the temperature was increased at a speed of 10 degrees C per minute from room temperature to 600 degrees C under a nitrogen atmosphere. The obtained semiconductor nanocrystal had an organic material content of 50% remaining on its surface.