TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: Each of the first substrate and the second substrate comprises: (i) an optionally doped group IV element, an optionally doped IV-IV multi-element semiconductor, or an optionally doped IV-IV-IV multi-element semiconductor; (ii) a polymorphic phase, oxide, nitride, oxynitride, carbide, oxycarbide, oxynitrocarbide, hydride of an optionally doped group IV element, an optionally doped IV-IV multi-element semiconductor, or an optionally doped IV-IV-IV multi-element semiconductor; or (iii) aluminum, aluminum oxide, titanium, titanium dioxide, nitride, oxynitride, carbide, oxycarbide, and oxynitrocarbide of titanium, titanium-tungsten, niobium, tantalum, zirconium, erbium and/or lanthanum, or a peroskvite compound used in refractory metal oxide semiconductor gates, where each of (i)-(iii) has an optionally hydroxylated-terminated surface or hydride-terminated surface. Each of the first substrate and the second substrate comprises silicon, germanium, silicon germanium (SixGe1-x), silicon germanium carbide(Si1-x-yGexCy), silicon germanium tin (Si1-x-yGexSny), silicon germanium tin carbide (Si1-x-y-zGexSnyCz), or germanium carbide (GexC1-x), gallium arsenide, silicon germanium nitride (Si3(1-x)Ge3xN(4(1- delta ))), gallium aluminum arsenide (Ga1-xAlxAs), silicon germanium oxynitride (SixGe(1-x)(OyN1-y)n), silicon germanium carbide oxynitride (Si1-x-yGexCy(OxN1-x)n), silicon germanium carbonitride ((Si1-x-yGexCy)3N4-x-y), silicon dioxide, germanium dioxide, silicon germanium dioxide (SixGe1-xO2), silicon germanium compound (Si1-x-yGexCyO2), germanium compound (GexC1-xO2), silicon nitride or silicon germanium nitride (Si3(1-x)Ge3xN(4(1- delta ))). The first bonding surface comprises silicon hydrogen peroxide (O2H2Si(1x 1)(100)) or hydroxy-terminated silicon dioxide surface (SiO2-O2H2Si), where 5-90% of hydrogen is desorbed from the first bonding surface. The second bonding surface is silicon oxide (SiOx), where x is 0-2. The bonding layer comprises silicon, oxygen, and hydrogen.