NOVELTY - Production of dopant profile in silicon-based semiconductor substrate involves applying a liquid dopant source onto the textured surface of the semiconductor substrate, drying the dopant source and generating precipitates simultaneously, and diffusing dopant atoms into the semiconductor substrate by performing one or more heat treatment process. The drying of dopant source is performed using a two-temperature treatment process of the semiconductor substrate having the precipitates in a pyramidal surface area.    USE - Production of dopant profile in alkaline textured mono-crystalline silicon-based semiconductor substrate used for manufacture of solar cell.    ADVANTAGE - The method enables the production of dopant profile in alkaline textured mono-crystalline silicon-based semiconductor substrate with reduced contact resistance of metal-semiconductor junction by simple and fast process, and provides the solar cell with high efficiency.    DETAILED DESCRIPTION - Production of dopant profile in silicon-based semiconductor substrate involves applying a liquid dopant source onto the textured surface of the semiconductor substrate, drying the dopant source and generating precipitates simultaneously, and diffusing dopant atoms into the semiconductor substrate by performing one or more heat treatment process. The drying of dopant source is performed using a two-temperature treatment process of the semiconductor substrate having the precipitates in a pyramidal surface area. A primary temperature treatment process is carried out by heating the semiconductor substrate to a primary temperature (T1), maintaining the primary temperature for a time (t1), and cooling subsequently to a secondary temperature (T2). A secondary temperature treatment process is performed by maintaining the secondary temperature of the substrate for a time (t2). The temperature difference ( delta T) between the primary temperature and the secondary temperature of the two-temperature treatment process is 50-100 degrees C, and the time (t1) of the primary temperature treatment process is less than the time (t2) of the secondary temperature treatment process.