TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The alkoxysilanes and/or alkoxyalkylsilanes comprises optionally saturated, optionally branched, aliphatic, alicyclic and aromatic groups, which are functionalized at any position of the alkoxide groups by heteroatoms comprising oxygen, nitrogen, sulfur, chlorine or bromine. The phosphorus-containing compounds comprises phosphorus(V) oxide, phosphoric acid, polyphosphoric acid, phosphoric acid esters or phosphonic acid esters with alpha - and beta -position siloxane functionalized group. The strong carboxylic acid salts comprises formic acid, acetic acid, oxalic acid, trifluoroacetic acid, mono-, di-and trichloroacetic acid, glyoxylic acid, tartaric acid, maleic acid, malonic acid, pyruvic acid, malic acid or 2-oxoglutaric acid. The printable oxide medium is produced in the form of doping medium based on hybrid sols and or gels using alcoholates/esters, hydroxides or oxides of aluminum, gallium, germanium, zinc, tin, titanium, zirconium, lead and/or arsenic. The concentration of the parasitic doping on the treated substrates is different from at least two ten-magnitude of the doping influenced doped regions. Preferred Method: The oxide medium is textured up to a highly viscous, glass-type composition, and the obtained product is either solubilized by the addition of a solvent back into solution or is re-transformed in a sol state using intensive shearing mixing devices and is retransformed by repeated partial or complete structure back recovery (gelation). The layers are vitrified on the surfaces by heat treatment at a temperature in of 750-1100 degrees C, preferably 850-1000 degrees oC, and the silicone doped atoms, e.g. boron and/or phosphorus are left on the substrate, where the conductivity of the substrate is influenced. A simultaneous co-diffusion with formation of n- and p-type layers is carried out by heat treatment of the layers, which are formed in the printed oxide medium. The silicon wafers are printed with the oxide medium as doping medium. The printed doping medium is dried, compressed and then subjected to subsequent gas phase diffusion with phosphoryl chloride, where high doping is obtained in the printed areas and lower doping in areas, which are subjected to gas phase diffusion. The oxide medium, which deposited on the entire surface of the silicon wafer, is dried and/or compacted as doping medium, and the local doping of the underlying substrate material is initiated from the compacted paste by means of laser irradiation. The silicon wafers are printed either over the entire surface or locally with oxide medium as doping medium to form n- and p-dopant acting medium optionally by alternating structures. The printed structures are dried, compressed and encapsulated with diffusion barrier material, preferably sol-gel-based or plasma enhanced chemical vapor deposition based silicon dioxide layers. The drying, compaction and/or the doping of the oxide medium is carried out by heat treatment, after printing the oxide medium, and the resulting glass layers are etched with an acid mixture containing hydrofluoric acid and optionally phosphoric acid to obtain hydrophobic silicon wafer surfaces, where the etching mixture comprises 0.001-10 wt.% hydrofluoric acid or 0.001-10 wt.% hydrofluoric acid and 0.001-10 wt.% phosphoric acid in the mixture as an etchant. The oxide medium is prepared with the simultaneous use of boron-containing and phosphorus-containing compounds. EXAMPLE - 83 g Ethylene glycol monobutyl ether, 83 g diethylene glycolmonoethylether and 5 g phosphorus pentoxide were provided in a beaker with stirring to obtain slightly yellowish solution. 7.15 g Tetraethyl orthosilicate and 12 g of ethyl cellulose were added to these solutions to obtain a paste. The paste was printed on silicon wafers. The printed wafers were dried on a hot plate at 300 degrees C for 2 minutes and then placed into a 900 degrees C muffle furnace. The wafers were etched with 5% hydrofluoric acid solution and heated at 50 degrees C to obtain doping medium.