NOVELTY - A primary compound semiconductor layer is provided on a silicon substrate (10). A secondary compound semiconductor layer is formed on the primary compound semiconductor layer at a high temperature, to obtain the compound semiconductor laminated material (1). The secondary compound semiconductor layer is a layer containing indium-arsenic-antimony-containing compound (I). An indium raw material, arsenic raw material, and antimony raw material are irradiated, during the formation of secondary compound semiconductor layer.    USE - Manufacture of compound semiconductor laminated material used for suprathermal electron devices e.g. high-electron mobility transistor and heterojunction bipolar transistor, optical devices e.g. light-emitting diode and laser diode, magnetic sensors, and solar cell.    ADVANTAGE - The method provides the compound semiconductor laminated material with excellent surface flatness and high crystallinity.    DETAILED DESCRIPTION - A primary compound semiconductor layer is provided on a silicon substrate. A secondary compound semiconductor layer is formed on the primary compound semiconductor layer at a high temperature, to obtain the compound semiconductor laminated material. The primary compound semiconductor layer contains group-III-V compound semiconductor. The secondary compound semiconductor layer is a layer containing indium-arsenic-antimony-containing compound of formula: InAs1-xSbx (I), where x is 0-0.3 (including 0.3). An indium raw material, arsenic raw material, and antimony raw material are irradiated, during the formation of secondary compound semiconductor layer. The ratio of molecular beam intensity of antimony raw material with respect to molecular beam intensity of indium raw material during the formation of secondary compound semiconductor layer is 1 or more. The formation rate of secondary compound semiconductor layer is 1 mu m per hour.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view explaining the manufacture of compound semiconductor laminated material.    Compound semiconductor laminated material (1)    Silicon substrate (10)    Primary compound semiconductor (11)    Secondary compound semiconductor (12)