NOVELTY - Depositing (M1) copper-indium-gallium-selenide (CIGS) thin film for solar panel construction comprises: (a) providing a chamber; (b) providing a substrate and placing the substrate inside the chamber; (c) providing a material source; (d) placing metals or semi-metals in the material source inside the chamber; (e) reducing pressure within the chamber; (f) heating the substrate with an electromagnetic heating source; (g) heating material source with an electromagnetic heating source; and (h) performing deposition of the metals and/or semi-metals to the substrate.    USE - The method is useful for depositing copper-indium-gallium-selenide (CIGS) thin film for solar panel construction (claimed) which is useful in manufacturing solar cells.    ADVANTAGE - The method: utilizes low cost substrates, and thus allows for a simple, and low cost manufacturing method of solar cells; eliminates gallium segregation problem in a solar cell's absorber layer resulting from certain deposition processes; utilizes three dimensional electromagnetic heating which is selective in heating and offers a rapid method for uniform heating; maintains the structural integrity of substrate materials; ensures uniformity and granularity of the thin film material; and minimizes materials loss during the deposition process.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) depositing (M2) CIGS thin film for solar panel construction comprising: providing a chamber; providing a substrate and placing the substrate inside the chamber, where the substrate is already coated with copper, indium and gallium by physical vapor deposition; providing a material source where the material source is selenium; placing the material source inside the chamber; reducing pressure within the chamber; heating the substrate with an electromagnetic (radio frequency and microwaves) heating source; heating material source with an electromagnetic heating source; and performing selenization of the copper, indium, gallium on the substrate;    (2) depositing (M3) CIGS thin film for solar panel construction comprising: providing a first chamber; providing a substrate and placing the substrate inside the chamber; providing a second chamber; providing a portion of copper, indium and gallium elements or copper-indium-gallium alloy, where the copper, indium and gallium or the copper-indium-gallium alloy is heated by a first heating source; reducing pressure within the chambers; converting the copper, indium and gallium or copper, indium and gallium alloy powder into vapors and transporting the vapors to a heating area by a first tubing, where the heating area comprises a second heating source and the substrate, and the second heating source is a second electromagnetic heating source; providing a portion of selenium vapor or hydrogen selenide gas and introducing the portion of selenium vapor or hydrogen selenide gas to the heating area via a second tubing; heating the substrate with the second heating source; and performing a crystallization of the portion of selenium or hydrogen selenide and the portion of copper, indium and gallium to the substrate;    (3) an apparatus (A1) for deposition of many elements onto a solar cell substrate comprising: a chamber; a substrate; many elements for deposition onto the substrate; an electrical source to conduct deposition of the elements to the substrate; a electromagnetic heating source to heat the substrate; and a vacuum source to control the pressure environment of the chamber;    (4) an apparatus (A2) for deposition of many elements onto a solar cell substrate comprising: a chamber; a substrate; many elements and gaseous materials for crystallization onto the substrate; an electromagnetic heating source to heat the substrate and to conduct crystallization of the elements and gaseous materials to the substrate; an electromagnetic heating source to heat the elements; and a vacuum source to control the pressure environment of the chamber; and    (5) depositing (M4) CIGS thin film for solar panel construction comprising: providing a vessel where the vessel further comprises a water-based chemical bath solution, where the water-solution further comprises at least one target compound; providing a CIGS-coated substrate and placing the CIGS-coated substrate inside the vessel; providing an electromagnetic heating source; heating the vessel and the water-based chemical bath solution with the electromagnetic heating source; and allowing the target compounds to deposit onto the CIGS coated substrate as the water-based solution is heated.    DESCRIPTION OF DRAWING(S) - The figure illustrates a schematic diagram illustrating the deposition of copper, indium, gallium, or copper-indium-gallium powder by evaporation, and copper-indium-gallium or copper-gallium/indium by sputtering.    Unheated substrate (501)    Barrier layer (502)    Back contact layer (503)    Copper, indium and gallium metal source (504)