NOVELTY - A film (F1) of organosilicon compound is formed on silicon substrate (1). A region of film (F1) in which high-concentration diffusion layer is to be formed is removed, and opening (2a) is formed on region. A dopant coating agent (4) is applied to cover film (F1) and opening, and primary dopant is diffused into substrate (1) through film (F1) and opening, such that high-concentration diffusion layer is formed in portion where dopant is diffused through opening and low-concentration diffusion layer is formed in portion where dopant is diffused through film (F1).    USE - Formation of p-type selective emitter used for solar cell (claimed) e.g. p-n junction-type solar cell, pin-type solar cell and Schottky-type solar cell.    ADVANTAGE - The highly efficient solar cell having p-type selective emitter layer having high-concentration diffusion layer and low-concentration diffusion layer is manufactured with high yield by a simple process, by formation of p-type selective emitter.    DETAILED DESCRIPTION - A film (F1) of an organosilicon compound is formed on a light-receiving surface of a silicon substrate. A region (R1) of film (F1) in which a high-concentration diffusion layer is to be formed is removed, and an opening is formed on the region (R1). A primary dopant coating agent (A1) is applied to cover the film (F1) and the opening, and primary dopant is diffused into the silicon substrate through the film (F1) and the opening, such that a high-concentration diffusion layer is formed in a portion where the primary dopant is diffused through the opening and a low-concentration diffusion layer is formed in a portion where the primary dopant is diffused through the film (F1). An INDEPENDENT CLAIM is included for solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of solar cell.    Silicon substrate (1)    Polysilazane film (2)    Opening (2a)    Primary dopant coating agent (3)    P-type selective emitter layer (4)