NOVELTY - Production of monocrystalline copper indium sulfide (CuInS2) includes drying reactor; coating inner wall of reactor with carbon and drying; mixing sulfur, indium and copper powders, adding into carbon-coated reactor, sealing, vacuumizing, placing into thermostatic vertical furnace, slowly heating, and cooling to room temperature to obtain CuInS2 polycrystalline ingot; and polishing surface, etching, grinding into powder, adding into carbon-coated reactor, mixing with excess sulfur powder, sealing, vacuumizing, and placing into high temperature zone of sectional vertical furnace.    USE - Method for production of monocrystalline copper indium sulfide (claimed) used for thin film solar cell.    ADVANTAGE - The method improves growth speed of crystal, solves large crystal diameter problem, and obtains product with excellent property.    DETAILED DESCRIPTION - Production of monocrystalline copper indium sulfide (CuInS2) comprises:    (A) drying reactor;    (B) coating inner wall of reactor with carbon and drying;    (C) mixing sulfur powder, indium powder and copper powder, adding into carbon-coated reactor, sealing, vacuumizing, placing into thermostatic vertical furnace, slowly heating to target temperature and insulating to melt raw materials, lowering temperature and insulating, and cooling to room temperature to obtain CuInS2 polycrystalline ingot;    (D) polishing surface, etching, grinding into powder, adding into carbon-coated reactor, mixing with excess sulfur powder, sealing, vacuumizing, placing into high temperature zone of sectional vertical furnace, heating to target temperature and insulating to fully melt polycrystalline powder, lowering reactor into middle transition temperature zone and into low temperature zone, cooling to low temperature and insulating, and cooling sectional vertical furnace to room temperature to obtain CuInS2 crystal seed having (112) crystal orientation; and    (E) cutting CuInS2 polycrystalline ingot and crystal seed, polishing surface, etching with bromine methanol, washing, and drying to obtain pretreated ingot and crystal seed; and adding pretreated crystal seed into carbon-coated reactor, tightly contacting with seed bag, placing CuInS2 powder as solvent above the seed, placing pretreated CuInS2 polycrystalline ingot above the powder, sealing, vacuumizing, placing reactor into sectional vertical furnace, moving reactor into middle transition temperature zone to carry out initial growing, placing polycrystalline ingot and powder solvent into high temperature zone while placing crystal into low temperature zone, heating high temperature zone to target temperature and insulating while applying rotating magnetic field to middle transition temperature zone, rising reactor until crystal seed is completely melted, lowering reactor to intermediate transition temperature zone, and cooling vertical segment furnace to room temperature.    An INDEPENDENT CLAIM is included for a monocrystalline CuInS2 production device comprising reactor; and vertical furnace comprising furnace body provided with high temperature and low temperature zones, middle transition temperature zone, heating body, magnetic field generator, seeding section, constriction section and initial crystal growth section.