NOVELTY - The component has a contact structure (1-3) that is provided with a first-order branching point (1.1a,1.1b,2.1a,2.1b,3.1a,3.1b). The first-order subsequent conduction track (1.1A,1.1B,2.1A,2.1B,3.1A,3.1B) is provided with a second-order branching point (1.2a,1.2b,2.2a,2.2b,3.2a,3.2b) at which the second-order subsequent conduction track (1.2A,1.2B,2.2A,2.2B,3.2A,3.2B) branches off. The electrical through-conduction resistance of each second-order track is higher than the resistance of the first-order track connected to second-order track through the second-order branching point.    USE - Semiconductor component such as lateral transistor, bipolar transistor or FET e.g. hetero-structure FET (HFET) and gallium nitride FET (all claimed). Can also be used in semiconductor diode such as power diode, LED and photovoltaic solar cell.    ADVANTAGE - The homogeneous power loss causes a surface-homogeneous dissipation, so that the stresses on the semiconductor device due to temperature differences can be avoided or reduced. The more efficient temperature control in heat dissipation area is made possible.The efficiency in manufacturing the semiconductor device can be improved. The manufacturing cost can be reduced. The reliability and service lifetime can be improved. The reflections on the structure can be reduced. The dynamic stability of the component can be improved. The impedance matching of the wideband can be improved. The complexity of a contact structure can be reduced. The electric field peaks can be reduced, thus the breakdown behavior in the stop-band can be improved.    DETAILED DESCRIPTION - The contact structure is provided with a contact-making point (1a,2a,3a) for electrically conductively connecting the contact structure to an external terminal. The contact structure is provided with a first-order branching point proceeding from the contact-making point at which the first-order subsequent conduction track branches off.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the semiconductor component structure.    Contact structures (1-3)    First-order subsequent conduction tracks (1.1A,1.1B,2.1A,2.1B,3.1A,3.1B)    Second-order subsequent conduction tracks (1.2A,1.2B,2.2A,2.2B,3.2A,3.2B)    Contact-making point (1a,2a,3a)    First-order branching points (1.1a,1.1b,2.1a,2.1b,3.1a,3.1b)    Second-order branching points (1.2a,1.2b,2.2a,2.2b,3.2a,3.2b)