TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred components: The alkali metal is lithium. The alkali metal diazabutadien compound is selected from lithium2(diazabutadien)ligand4 of formula (I), lithium4(diazabutadien)2ligand2 of formula (II), lithium2(diazabutadien) of formula (III), lithium(diazabutadien)ligand2 of formula (IV) or lithium(diazabutadien)2 of formula (V).. Nickel, cobalt, manganese, titanium, niobium, lanthanum, boron or their mixture are utilized during alkali metal deposition on the substrate. Lithium, lithium nitride (LinNm), lithium carbide (LinCm), lithium carbon nitride (LinCmNp), lithium silicide (LinSim), lithium oxide (LinOm), lithium cobalt oxide (LinComO2) or (LinComOp), lithium oxide manganese (LiMnO2 or LinMnmOp), lithium oxide nickel (LiNiO2) or (LinNimOp), lithium phosphorus oxynitride (LinPO4POnNn), (LiPON), lithium tantalate lanthanum (LiLanTmOp), lithium niobate (LiNbO3 or LinNbmOp) and lithium boron (LinBm) are utilized in the process, where m, n and p are 1-7. The reactive gas is utilized during process that acts as an oxidizing agent and selected from nitrogen dioxide, nitric oxide, hydrogen peroxide, water, ozone or oxygen.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The reducing agent is selected from nitrogen, radical chemical species, diethyl zinc, dimethyl zinc, trimethylaluminum, pyrazoline, dihydro benzene furan, 9-borabicyclo (3,3,1) nonane, diborane, phenylhydrazine, dimethyl hydrazine, monomethyl hydrazine, tris(trimethylsilyl)amine, triethylamine, trimethylamine, diethylamine, dimethylamine, ethylamine, methylamine, trisilylamine, hydrazine, phenyl silane, ethyl silane, methyl silane, diethyl silane, dimethyl silane, ammonia, trisilane, disilane, silane or hydrogen gas. The reactive gas is the oxidizing agent that is selected from carboxylic acid. Preferred Conditions: The deposition method is selected from chemical vapor deposition, atomic layer deposition, plasma chemical vapor deposition, plasma atomic layer deposition, pulse chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, high temperature wire chemical vapor deposition, high temperature wire atomic layer deposition or supercritical fluid deposition. The reactive gas is a reducing agent that is introduced into the reactor. Preferred Definitions:    Ligand=tetrahydrofuran, diethylether, dimethylaminoethane, acetonitrile, glyme, diglyme or polyglyme; and    litium compound=lithium diisopropylamide.