NOVELTY - A photovoltaic device (10), comprises: a transparent superstrate (12); a transparent conductive oxide (14) on the transparent superstrate; an n-type window layer (18) on the transparent superstrate; a p-type absorber layer (20) on the n-type window layer (18), where the p-type absorber layer (20) comprising cadmium telluride, where the p-type absorber layer (20) defines a back surface positioned opposite from the n-type window layer (18), and where the back surface is tellurium enriched; and an inert conductive paste layer (23) on the back surface of the p-type absorber layer (20).    USE - A photovoltaic device (claimed).    ADVANTAGE - The photovoltaic device exhibits less degradation over time.    DETAILED DESCRIPTION - A photovoltaic device (10), comprises: a transparent superstrate (12); a transparent conductive oxide (14) on the transparent superstrate; an n-type window layer (18) on the transparent superstrate; a p-type absorber layer (20) on the n-type window layer (18), where the p-type absorber layer (20) comprising cadmium telluride, where the p-type absorber layer (20) defines a back surface positioned opposite from the n-type window layer (18), and where the back surface is tellurium enriched; and an inert conductive paste layer (23) on the back surface of the p-type absorber layer (20), where the inert conductive paste layer (23) is substantially free from an acid or acid generator. An INDEPENDENT CLAIM is included for forming a back contact onto an exposed surface of a p-type absorber layer (20) of a p-n junction in the manufacture of a thin film photovoltaic device, where the p-type absorber layer (20) comprises cadmium telluride, the method involves: enriching the exposed surface with tellurium; forming an inert conductive paste layer (23) onto the exposed surface; and applying a metal layer (24) onto the inert conductive paste layer (23).    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a cadmium telluride thin film photovoltaic device.    Photovoltaic device (10)    Transparent superstrate (12)    Transparent conductive oxide (14)    N-type window layer (18)    P-type absorber layer (20)