NOVELTY - A moisture-proof film consists of a water-trapping layer (2) provided between films (1,3). The water-trapping layer comprises carboxylic anhydride. The water-vapor permeation rate (T1: g/m2.day) of film (1) measured at 40 degrees C and 90% relative humidity is less than or equal to the water-vapor permeation rate of film (3) at the same conditions. The water-vapor permeation rate of film (1) is less than 0.1 g/m2.day.    USE - Moisture-proof film is used for over-laminating in organic electronic devices (all claimed). Uses include but are not limited to organic electroluminescent device, organic thin-film transistor device, organic solar cell, and electronic paper.    ADVANTAGE - The moisture-proof film maintains a low water-vapor permeation rate over a long period of time, and is transparent and economical. The film economically provides flexible organic electronic device having excellent durability. The water-trapping layer has excellent mechanical property and moldability. Since the film is transparent, it can be arranged in the light-emission surface and light-receiving surface side of an element, without interrupting light.    DESCRIPTION OF DRAWING(S) - The drawings show a sectional view of the structure of an organic electroluminescent element using the moisture-proof film, and a sectional view of the structure while peeling moisture-proof film and sealing organic electroluminescent element as over-laminating film.    Films (1,3)    Water-trapping layer (2)    Sealing material (5)    Organic-inorganic layer (6)    Substrate (8)
NOVELTY - The roll (1) has a doughnut shaped end surface process seal (3) affixed on a side of a transparent support film at an end surface of a dry film-resist roll part (2) that winds up dry film resist to a cylindrical core (8) to form a photosensitive layer in roll shape. Adhesive is applied on a side of seal base material of the end surface process seal, where adhesive force of the adhesive is about 400-600 g/mm. The end surface process seal is formed with a core through-hole, where carboxyl group content is about 100-600 and weight average molecular weights of binder resin are about 5000-500000.    USE - Dry film-resist roll for forming a conductive pattern e.g. printed wiring board, lead frame and semiconductor package, on a film device e.g. flexible display device, film solar cell and film type electrostatic capacitance type touchscreen.    ADVANTAGE - The doughnut shaped end surface process seal is affixed on the side of the transparent support film at the end surface of the dry film-resist roll part that winds up the dry film resist to the cylindrical core to form the photosensitive layer in roll shape such that edge fusion inhibitory effect of the dry film resist can be improved, so that worsening rewinding operativity and cause of defects in a wiring pattern can be avoided.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a dry film-resist roll.    Dry film-resist roll (1)    Dry film-resist roll part (2)    Doughnut shaped end surface process seal (3)    Cylindrical core (8)
NOVELTY - The method involves providing a catalyst support structure (30) having a core (32) and an inner carbide thin film on the core. Catalyst nanoparticles (34) are deposited on the catalyst support structure. An outer carbide thin film (36) is preferentially formed on the catalyst support structure compared to catalyst particles after depositing the catalyst nanoparticles, where the outer carbide thin film surrounds the catalyst particles to anchor the catalyst particles to the catalyst support structure, which comprises carbon or modified carbon.    USE - Method for forming a stabilized catalyst structure that is utilized in an electrochemical device e.g. fuel cell such as polymer electrolyte membrane (PEM) fuel cell and phosphoric acid fuel cell.    ADVANTAGE - The carbide thin films of the catalyst structure protect a carbon support from corrosion so as to maintain catalyst performance of the catalyst particles, an electrode and an electrochemical cell. The outer carbide thin film greatly improves stability of the catalyst particles.    DETAILED DESCRIPTION - The method enables utilizing a carbide precursor that comprises tungsten salt, boron salt, niobium salt, molybdenum salt, tantalum salt and titanium salt.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a catalyst structure having a carbide thin film utilized in a fuel cell.    Catalyst support structure (30)    Core (32)    Catalyst nanoparticles (34)    Outer carbide thin film (36)
NOVELTY - A photoelectric conversion element material comprises component (A) containing oxygen atom, and sulfide of group 15 element, and component (B) containing organic semiconductor and/or inorganic semiconductor. The number ratio of oxygen atom with respect to group 15 atom is 0.01-0.8.    USE - Photoelectric conversion element material is used for manufacture of solar cell (all claimed).    ADVANTAGE - The photoelectric conversion element material has high photoelectric conversion efficiency and excellent durability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of photoelectric conversion element material;    (2) solar cell (1); and    (3) manufacture of solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the solar cell containing the photoelectric conversion element material.    Solar cell (1)    Substrate (2)    Transparent electrode (3)    Layers (4,5)    Cathode (7)
NOVELTY - The method comprises exposing an insulating or semiconducting solid state material to an amount of radiation, which is sufficient to change its insulating or semiconducting state into a conducting state. The material includes an oxide. The radiation has an energy of 80-100 eV, which is higher than an oxygen defect formation energy in anatase. The method further comprises simultaneous exposure to an anion gas such as atomic, molecular oxygen or ozone. The radiation includes electrons, extreme UV, ions, interference or laser light.    USE - The method is useful for lithographic patterning of an insulating or semiconducting solid state material in crystalline form to form a lithographic pattern, which is useful in solar cells, photoelectrochemical devices, optical devices, gas sensors, electrochromic displays, capacitors, varistors, resistors, inductors, memristors, magnetic spin valves, MOSFETS and other electronic/spintronic devices (all claimed).    ADVANTAGE - The method is capable of lithographic patterning the insulating or semiconducting solid state material with less energy consumption in a rapid manner.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a lithography system.
NOVELTY - Processing method of transparent conductive film (3) involves forming transparent conductive film using an organic metal gas-phase growth method, generating hydrogen radical inside a processing container (12), and exposing the transparent conductive film to the hydrogen radical.    USE - Processing method of transparent conductive film used for thin-film solar cell.    ADVANTAGE - The processed transparent conductive film has improved electroconductive characteristics.    DESCRIPTION OF DRAWING(S) - The drawing shows a processing apparatus of processing method of transparent conductive film.    Substrate (1)    Transparent conductive film (3)    Processing container (12)    Metal catalyst (18)    Pipe (20)
NOVELTY - The target (12) has a crystalline structure of indium that is provided in an area of an indium target element. An erosion deepest portion is surrounded by the crystalline structure of indium. The indium target element is made into the crystalline structure by which the erosion cannot be carried out on the average than the crystalline structure in the other area of the indium target element.    USE - Indium sputtering target used for formation of light absorption layer of copper-indium-gallium-selenium (CIGS) type thin film solar cell.    ADVANTAGE - The operating efficiency of the indium target element can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of indium sputtering target.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of planar-shaped of the disc type indium target element. (Drawing includes non-English language text)    Backing plate (11)    Indium sputtering target (12)
NOVELTY - A gas barrier laminated material (10) comprises PET film-containing base material (1) and silicon oxide thin film (2) formed on the surface of base material. The orientation angle of the molecular chain of the base material measured by phase difference method and the surface cohesion force are improved from 50 degrees -90 degrees or -50 degrees to -90 degrees . The ratio of oxygen and silicon in the thin film (2) is 1.6-2.0 calculated by X-ray photoelectron spectroscope. The peeling strength of the film (2) with respect to the base material is 2 N/15 mm or more.    USE - Gas barrier laminated material is used as packaging material for foodstuffs, precise electronic components and pharmaceuticals, and back surface protecting sheet of solar cell module.    ADVANTAGE - The gas barrier laminated material has excellent adhesiveness even in hot-humid environment.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of gas barrier laminated material.    PET film base material (1)    Silicon oxide thin film (2)    Gas barrier laminated material (10)
NOVELTY - A glass substrate (1) consists of scattering layer (2). The surface of scattering layer is polished. The scattering layer has transparent continuous phase containing oxides and oxide particles. The portion(s) of surface of polished scattering layer has continuous phase. The oxide particles have refractive index lower than the continuous phase. The difference of refractive index of oxide particles and continuous phase is 0.3 or more. The average particle diameter of oxide particles is 0.1-10 mu m. The thickness of the scattering layer is 10 mu m or less.    USE - Glass substrate is used for photoelectric conversion element (claimed) e.g. organic electroluminescent element for display, backlight and illumination, and solar cell.    ADVANTAGE - The glass substrate has excellent uniformity, and favorable light-extraction efficiency, and is economical. The scattering layer with reduced thickness is formed.    DETAILED DESCRIPTION - A glass substrate consists of scattering layer. The surface of scattering layer is polished. The scattering layer has transparent continuous phase containing oxides and oxide particles. The portion(s) of surface of polished scattering layer has continuous phase. The oxide particles have refractive index lower than the continuous phase. The difference of refractive index of oxide particles and continuous phase is 0.3 or more. The average particle diameter of oxide particles is 0.1-10 mu m. The thickness of the scattering layer is 10 mu m or less. The average value of distance from the glass substrate to the surface of the scattering layer is larger than the average particle diameter of the oxide particles. An INDEPENDENT CLAIM is included for manufacture of glass substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of structure of organic electroluminescent element.    Glass substrate (1)    Scattering layer (2)    Electrode layers (3,5)    Light emitting layer (4a)    Organic layer (4b)
NOVELTY - A coating liquid comprises a polyvinyl alcohol-type resin (A), boron compound as dopant (B), 70 wt.% or more polyhydric alcohol (C) having boiling point of 100 degrees C or more, and silicon-containing microparticles (D).    USE - Coating liquid is used for forming film for semiconductor element e.g. transistor, diode and solar cell.    ADVANTAGE - The coating liquid has stable viscosity, and efficiently provides uniform film on high-functional semiconductor with reduced up-and-down fluctuation of resistance value.
NOVELTY - A coated article consists of nickel nanoparticles (14) dispersed on a substrate (11), and a silicon film (15) provided on the substrate. The substrate is provided on a catalyst film (13) comprising nickel.    USE - Coated article is used in photovoltaic device e.g. solar cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of polycrystalline silicon film.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the formation of silicon film during manufacturing process.    Substrate (11)    Buffer layer (12)    Catalyst film (13)    Nickel nanoparticles (14)    Silicon film (15)
NOVELTY - A separation film comprises inorganic particles and does not contain organic binder polymeric compound. The inorganic particles have pore with diameter of 0.01-10 mu m formed due to interstitial volume.    USE - Separation film used for electrochemical device e.g. lithium secondary battery (all claimed), fuel cell, solar cell and capacitor. Uses include but are not limited to electric vehicle, cellular phone, camcorder and notebook computer.    ADVANTAGE - The separation film has excellent mechanical strength, high resistance against temperature increases or external shocks, and enables movement of lithium ion smoothly through fully formed pores. The electrochemical device containing the separation film has improved stability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) electrochemical device, which has anode, cathode, separation film and electrolyte interposed between the cathode and the anode; and    (2) manufacture of separation film.
NOVELTY - The device has a concentrating parabolic collector (200) attached to a back side (103) of a transparent substrate (101). The parabolic collector includes a reflective surface (210) i.e. parabolic mirror, facing the back side of the transparent substrate and a focal point (F). A solar cell (120) is formed on the back side of the transparent substrate between the focal point and the reflective surface. The solar cell is made of material, and includes thickness providing photo-active absorption and photoelectric conversion of a portion (L2) of sun radiation.    USE - Composite spectrum-splitting photovoltaic (PV) device.    ADVANTAGE - The device achieves high photoelectric conversion efficiency along with material cost reduction to build high-efficient solar cells. The reflective surface re-directs the portion of the sun radiation toward the focal point, thus ensuring concentrating of the portion in vicinity of the focal point.    DETAILED DESCRIPTION - The material of the solar cell is hydrogenated amorphous silicon, monocrystalline silicon and indium gallium arsenide.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a PV device comprising a parabolic collector and two solar cells of different materials and sizes formed on opposite sides of a transparent substrate.    Focal point (F)    Portion of sun radiation (L2)    Transparent substrate (101)    Back side of substrate (103)    Solar cells (110, 120)    Concentrating parabolic collector (200)    Reflective surface of parabolic collector (210)
NOVELTY - The system has solar cells (102,104) that comprise solder pads. Interconnect (120) is aligned with solar cells and provided with a main portion (122) and multiple tabs (124) extending from main portion. Each tab is provided with a downward depression extending towards the solar cell. The lower surfaces of tabs are positioned above and coupled to relative upper surfaces of solder pads of the solar cells. A solder joint (118) is formed around a periphery of downward depression between the interconnect tab and solder pad to form an electrical connection between the solar cells.    USE - Solar power system.    ADVANTAGE - The solar cells can be electrically connected in and installed effectively into photovoltaic modules. Thus, the solar cell cracking during solder joint formation and contamination from solder residue can be prevented, and the positioning accuracy of solder joint on solar cell can be improved reliably. The failure rates caused while electrically connecting interconnects with solar cells can be reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic plan view of the electrically connected solar cells.    Solar cells (102,104)    Solder joint (118)    Interconnect (120)    Main portion (122)    Tab (124)
NOVELTY - The solar cell device (100) has a first band alignment mismatch which is set between a first contact (102) and an absorbing medium (103) which causes a first surface of the absorbing medium on a first side (104) of the absorbing medium to be in inversion. A second band alignment mismatch is arranged between a second contact (108) and the absorbing medium causes a second surface of the absorbing medium on the second side of the absorbing medium to be under accumulation.    USE - Solar cell device for providing carrier selective contact device.    ADVANTAGE - Allows the silicon dioxide to be deposited in low-cost and low-temperature approaches since the second band alignment mismatch is arranged between a second contact and the absorbing medium causes a second surface of the absorbing medium on the second side of the absorbing medium to be under accumulation. Achieves high conductivity with lower absorption by using a superlattice approach. Improves field effect surface passivation by actively suppressing the concentration of the carrier.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for providing the carrier selective contact device.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the carrier selective contact device.    Solar cell device (100)    First contact (102)    Absorbing medium (103)    First side (104)    Second contact (108)
NOVELTY - The film has main film that is coated with polysilazane containing liquid to single surface of base material. A gas barrier layer is formed in a base material. The modified layers are formed in surface of gas barrier layer, when modification process is performed in gas barrier layer. The nitrogen contents of modified layers are differed and film densities of modified layers are differed.    USE - Gas-barrier film used for display portion of solar cell, organic electroluminescent element and LCD of electronic device. Can also be used for packaging goods such as foodstuff, industrial goods and pharmaceutical goods.    ADVANTAGE - The cutting processing of gas-barrier film can be increased. The barrier performance of gas-barrier film can be improved reliably. The bending tolerance and smoothness of gas-barrier film can be increased.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) organic photoelectric conversion element; and    (2) manufacturing method of gas barrier film.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the solar cell.    Bulk hetero junction-type organic photoelectric conversion element (10)    Substrate (11)    Transparent electrode (12)    Counter electrode (13)    Photoelectric conversion unit (14)    Electron carrying layer (18)
NOVELTY - The apparatus has a heating module (1) including a heating unit (11), a pyrometry unit (13) and a temperature control unit (12). A loading module (2) includes a substrate (21) and an auxiliary plate (22) and is surrounded with the heating module and defined between the heating and pyrometry units. A thin film (3) is coated on the substrate and directly contacted with the substrate and the auxiliary plate. The substrate and the auxiliary plate are tightly jointed, such that the thin film is securely positioned and sealed. The heating unit includes radiant tungsten halogen lamps (111).    USE - Thin film processing apparatus for processing a thin film of a solar cell i.e. copper indium gallium selenide (CIGS) solar cell.    ADVANTAGE - The substrate is coated with the thin film in which the auxiliary plate is arranged, so that the thin film is heated by thermal radiation symmetrically in thickness direction due to the substrate or the auxiliary plate made transparent for thermal radiation, thus preventing debonding, warping and cracking problem of the thin film and eliminating outgassing from the thin film. The apparatus provides better repeatability for directly controlling temperature of the thin film and conserving energy due to directly heating thin film by a tungsten halogen tube, so that the apparatus is practical to use, and satisfies consumers requirements.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a thin film processing apparatus.    Heating module (1)    Loading module (2)    Thin film (3)    Heating unit (11)    Temperature control unit (12)    Pyrometry unit (13)    Substrate (21)    Auxiliary plate (22)    Radiant tungsten halogen lamps (111)
NOVELTY - Preparation of copper-doped/calcium-doped cadmium sulfide co-sensitizer involves doping impurity atom into semiconductor quantum dot, and assembling in quantum dot-sensitized solar cells.    USE - Preparation of copper-doped/calcium-doped cadmium sulfide co-sensitizer used for solar cell.    ADVANTAGE - The copper-doped/calcium-doped cadmium sulfide co-sensitizer is prepared by simple and economical method. The solar cell sensitized with copper-doped/calcium-doped cadmium sulfide co-sensitizer has improved open circuit voltage, photoelectric conversion efficiency and short circuit current density, and electrons are effectively injected into conduction band of titania by reducing dark current.
NOVELTY - Nanocrystalline anatase-type titanium dioxide thin film has dual-scale pore structure having size of 1-5 nm and 100-30 nm.    USE - Nanocrystalline anatase-type titanium dioxide thin film is used for solar cell.    ADVANTAGE - The nanocrystalline anatase-type titanium dioxide thin film is prepared by simple method.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of nanocrystalline anatase-type titanium dioxide thin film. Ethanol, tetrabutyl titanate and organic chelating agent are mixed in water bath at 30-40 degrees C, stirred uniformly, and maintained for 30 min, to obtain tetrabutyl titanate complex. Deionized water and ethanol are mixed at volume ratio of 1:2-4 are mixed, to obtain uniform aqueous solution of ethanol. The resulted product is stirred at speed of 500-l000 rpm, and dropped into tetrabutyl titanate complex, to obtain tetrabutyl titanate-ethanol complex solution. To the resulted product polyethylene glycol 2000 surfactant is added, and stirred at 30-40 degrees C, to obtain titanium oxide sol is 0.3-0.65 mol/L. The resulted product is subjected to static aging at room temperature for l-8 hours, coated on substrate, and obtained titanium dioxide sol-coated substrate sheet is dried 80-120 degrees C for 6-18 hours. The dried product is calcined at 550-750 degrees C for 1-4 hours, to obtain nanocrystalline anatase-type titanium dioxide thin film having dual-scale pore structure. The molar ratio of ethanol, tetrabutyl titanate and organic chelating agent in tetrabutyl titanate complex is 1:1.5-5. The pH value of tetrabutyl titanate-ethanol complex solution is 5.5-6.5. The molar ratio of tetrabutyl titanate and water in tetrabutyl titanate-ethanol complex solution is 1:25-45. The amount of polyethylene glycol 2000 added is 1.6-3.8 g/100 ml.
NOVELTY - The method involves calculating pre-depositing quartz tube diffusion furnace temperature according to preset temperature. Nitrogen phosphorus oxychloride is carried to a quartz tube diffusion furnace. Flow rate of nitrogen is about 500-2000sccm. Nitrogen phosphorus oxychloride depositing process is performed. Flow rate of oxygen is about 400-2000sccm. Oxygen and nitrogen are continuously mixed with the phosphorus oxychloride. Oxygen and nitrogen stopping process is performed. Silicon sheet phosphorus deposition process is performed.    USE - Polycrystalline silicon solar battery diffusion method.    ADVANTAGE - The method enables realizing pre-deposition operation and phosphorus oxychloride carrying operation, prolonging silicon sheet minority carrier service life, improving solar battery diffusion property, effectively blocking stack layer dislocation due to presence of chlorine and reducing high temperature lattice damage so as to improve photoelectric silicon sheet converting efficiency.
NOVELTY - The method involves constructing a cheap compound thin film solar battery structure. A solar light absorption characteristic of an aluminum antimonide thin film material is determined. Syntopic target sputtering process is performed. A depositing multi-layer is formed on a substrate of a crystalline thin film. The crystalline thin film is covered with a back contact layer.    USE - Pulse laser deposition aluminum antimonide-based thin film solar battery manufacturing method.    ADVANTAGE - The method enables improving photoelectric convert efficiency of aluminum antimonide thin film solar battery, and ensuring better application prospect.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a pulse laser deposition aluminum antimonide-based thin film solar battery manufacturing method.
NOVELTY - The method involves collecting ion injection from a surface of black silicon. Energy of the ion injection is about 5KeV-40KeV. Black silicon ion injection annealing process is performed by utilizing oxygen. Annealing temperature is about 800-1100 degrees centigrade. Annealing time is about 20-90 minutes. RCA cleaning and HF solution washing process is performed to obtain clean black silicon. Alkali treating process is performed by utilizing alkali solution. A black silicon-type substrate is formed as a P-type substrate that is formed as phosphorus ion.    USE - Solar battery nanometer emitter preparation method.    ADVANTAGE - The method enables realizing solar battery nanometer emitter preparation operation in a simple manner, avoiding the need to utilize a phosphorus silicon glass, and improving production efficiency and reducing emitter preparation cost.    DETAILED DESCRIPTION - The black silicon-type substrate is formed as an N-type substrate that is formed as boron ion. An INDEPENDENT CLAIM is also included for a solar battery nanometer emitter.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating a solar battery nanometer emitter preparation method.'(Drawing includes non-English language text)'
NOVELTY - The method involves cleaning and drying a supporting unit. Carbon black powder and polyvinylidene fluoride emission are mixed to obtain paste mixture. The paste mixture is coated on an upper part of the supporting unit. A carbon-based layer is formed on a surface of the supporting unit. An air polyvinylidene fluoride diffusion layer is formed on a surface of the carbon-based layer. The carbon black powder is added with deionized water. The supporting unit is made of carbon paper and carbon cloth material.    USE - Air cathode single chamber microbial fuel battery manufacturing method.    ADVANTAGE - The method enables realizing air cathode single chamber microbial fuel battery manufacturing process in a simple manner.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating relationship between air cathode single chamber microbial fuel battery manufacturing characteristics. '(Drawing includes non-English language text)'
NOVELTY - A platinum on carbon (Pt/C) catalyst comprises 1-2 pts. wt. carbon black carrier, 100-200 pts. wt. deionized water, 200-350 pts. wt. of 15-30 g/L chloroplatinic acid hexahydrate in reducing polyol solution, 30-100 pts. wt. reducing polyol, and 10-40 pts. wt. of 1 M alkali solution in which amount of platinum (Pt) in catalyst is 60 mass%.    USE - A platinum on carbon catalyst for fuel cell (claimed).    ADVANTAGE - Pt/C catalyst has large electrochemical activity area, and preparation is simple and has high yield.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of Pt/C catalyst which involves combining raw materials, stirring until pH is 11-13, 1st standing, performing ultrasonic agitation for 10-20 minutes, performing microwave heating, cooling to room temperature, adjusting pH to 1-4 using acid, 2nd standing for 5-30 minutes, performing suction filtration, washing, and drying.
NOVELTY - This utility new type belongs to photovoltaic solar device field, a is one for manufacturing a silicon single crystal furnace of feeding mechanism. It is mainly composed of storage, the opening and closing door combination, feeding pole, feeding pole to open and close a door opening and closing control mechanism of opening and closing door combination comprise several fan of opening and closing door are closed, opening and closing door are connected with each storage port movable connecting, feeding pole extends into the storage barrel, and one end extends to the door opening and closing and opening and closing door, feeding pole the other end set with graphite card head, upper storage port is set with support bracket, the support bracket center with one through hole, a feeding pole by the through hole extends into the storage, of a mechanism in the upper storage peripheral surface is further set with support disk, a feeding pole comprise several connecting rods, several connecting rods with each opening and closing door movably connecting. This utility new type has the advantages that it can according to need of control oil jar jar pole extending and retracting to open and close a door to open and close so as to control precise feeding, high efficiency, low intensity and reduces the production cost.
NOVELTY - This utility new type belongs to the field of solar battery technology field, especially relates to high radiating hot solar battery back plate, wherein it is composed of connecting order of anti-scratch wearable coating, first adhesive layer, aluminium alloy layer, the second adhesive layer, the insulation barrier layer, adhesive layer and third ethylene-acetic acid ethylene bonding layer. Aluminium alloy is hot good conductor of, the battery module in produce of heat radiated in time, protecting the service life of battery, at the same time compact of structure with aluminium foil of excellent water vapour barrier property, and the surface cover with high dispersing nano-porous gas hardening coating of SiO2 material, futher improve the gas barrier property, the back plate the vapour transmissivity of 0.001g/m2.d This utility new type back plate reduces the production cost, reduces the back plate water vapour transmission rate and improves the battery module radiating function and prolong the battery module use service life.
NOVELTY - A raw material (70) containing liquid or solid polycyclic aromatic hydrocarbon is contacted with a catalyst (30) on a heated substrate (10), and carbon fiber nanostructure is formed in one surface (10a) side of the substrate.    USE - Manufacture of carbon nanofiber structure used for carbon nanofiber electrode and carbon nanofiber conductor wire (all claimed). Uses include but are not limited to dye-sensitized solar cell, lithium ion secondary battery, lithium ion capacitor, electrical double layer capacitor, fuel cell, metal air cell and for touchscreen.    ADVANTAGE - The method produces carbon nanofiber structure with improved productivity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) carbon nanofiber conductor wire, which is obtained by drawing the carbon nanofiber of the nanofiber structure in filament form; and    (2) apparatus for manufacturing carbon nanofiber structure, which consists of substrate supported rotatably, catalyst coating device which applies the coating liquid containing catalyst material in the outer peripheral surface of the substrate, heating apparatus for heating the catalyst material, reducible gas supply apparatus which supplies the reducible gas for reducing the catalyst material heated by the heating apparatus and forms particulate form activated catalyst, raw material coating device which coats the raw material and contacts with catalyst, and heating apparatus for heating the portion of coated raw material.    DESCRIPTION OF DRAWING(S) - The drawing shows the process of the manufacture of the carbon nanofiber structure.    Substrate (10)    Surface (10a)    Catalyst (30)    Structure (40)    Raw material (70)
NOVELTY - The polystyrene resin, polytetrafluoroethylene (PTFE) resin and electroconductive material are mixed at a ratio of 80-95:10-2.5:10-2.5. The melting temperature of PTFE resin is higher than the melting temperature of polystyrene resin. The mixing of polystyrene resin, PTFE resin and electroconductive material is performed at a temperature higher than the melting point of polystyrene resin and lower than the melting point of PTFE resin. The mixed material is extruded to form a film having a fixed thickness. The polystyrene resin is removed from the film.    USE - Method for manufacturing porous electroconductive base material used in gas diffusion layer of polymer electrolyte fuel cell (PEFC).    ADVANTAGE - The porous electroconductive base material maintains stable electroconductivity for a long period of time by improving adhesion of electroconductive material with the PTFE resin material. The porous electroconductive base material is produced simply at low cost by performing mixing and extrusion of resin materials and electroconductive material.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the extrusion apparatus for the manufacture of porous electroconductive base material.(Drawing includes non-English language text)    Extrusion apparatus (1)    Hopper (11)    Extruder (12)    Die (13)    Expansion roller (14)
NOVELTY - The fuel cell system has combined fuel processing apparatus having auxiliary sulfur resistant fuel processing (SRFP) unit (1), main steam reforming (STR) unit (2), sulfur removal or hydrogen enrichment (SR-HE) unit (3), hydro-desulfurization (HDS) unit (4) and HYP unit. The HYP unit is being most beneficial when the fuel cell unit is in low or medium temperature.    USE - Fuel cell system.    ADVANTAGE - Enables to effectively process the sulfur-containing fuels by combining two different fuel processing units in fuel cell system.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a start-up and shut-down method.    DESCRIPTION OF DRAWING(S) - The drawing shows the block diagram of the high temperature fuel cell system.    SRFP unit (1)    Main STR unit (2)    SR-HE unit (3)    HDS unit (4)
NOVELTY - The method involves depositing the contact material on the final substrate by laser-induced forward transfer (LIFT) of the material from a donor substrate to the final substrate, preferably using pulsed laser methods, and sintering the contact material by a laser source, preferably a continuous laser. The contact material used is a paste of carbon nanoparticles, carbon nanotubes, graphene paste, graphene film. The metal paste contains silver or copper.    USE - Method for creating electrical contacts (claimed) for electronic or optoelectronic device including high-concentration and low-concentration solar cells, thin films, organic LEDs (OLEDs).    ADVANTAGE - The contacts created by the method have excellent conductivity and adherence properties, in addition to high ratios between the height (thickness) and width.
NOVELTY - A negative electrode consists of electrical power collector and electrode layer containing negative electrode active material (I) containing silicon, titanium, germanium, tin and zinc, conductive support agent and binder containing resin, arranged on the surface of electrical power collector. The elasticity modulus (E) of binder containing resin is 1-7.4 GPa.    USE - Negative electrode is used for electrical devices (claimed). Uses include but are not limited to capacitors, motor vehicle components, auxiliary power supplies and lithium ion secondary battery for electric vehicles, hybrid electric vehicles, fuel cell vehicles, and hybrid fuel cell electric vehicle, mobile telephone and notebook personal computers.    ADVANTAGE - The negative electrode economically provides battery having excellent durability, reliability, workability, initial stage capacitance, output characteristics and cycle characteristics.    DETAILED DESCRIPTION - A negative electrode consists of electrical power collector and electrode layer containing negative electrode active material (I), conductive support agent and binder containing resin, arranged on the surface of electrical power collector. The negative electrode active material is of formula: SixTiyMzAa (I).    M=Ge, Sn or Zn;    A=unavoidable impurity;    x,y,z=0-100 (excluding 0,100);    a=0-0.5 (excluding 0.5);and    x+y+z+a=100.    The elasticity modulus of binder containing resin is 1-7.4 GPa. An INDEPENDENT CLAIM is included for electrical devices, which contains negative electrode.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the laminated flat non-bipolar lithium ion secondary battery.    Electric power collector (11)    Anode collector (12)    Negative electrode active layer (15)    Electrolyte layer (17)    Cell layer (19)
NOVELTY - The present invention relates to a conductive silver paste with glass frit for solar cells. The conductive silver paste comprises silver particle and glass frit, and the composition of the glass frit includes the combination of Bi2O3, B2O3, SiO2, ZnO and Al2O3. The conductive silver paste of the present invention is utilized to increase the adhesion force of the back side silver electrode on solar cells.
NOVELTY - Use of a composition comprising a diethylzinc and an aryl compound (X), for depositing a zinc oxide film, is claimed.    USE - The composition is useful in a chemical vapor deposition for depositing a zinc oxide film such as a conductive transparent oxide film, which is useful in the manufacture of a micromorph solar cell, a flat panel display and LED (all claimed).    ADVANTAGE - The non-toxic composition ensures effective deposition of the zinc oxide film over large areas at low temperature in a cost-effective manner.    DETAILED DESCRIPTION - Use of a composition comprising a diethylzinc and an aryl compound of formula (X), for depositing a zinc oxide film, is claimed.    R1 = H, alkyl, an olefin conjugated with aromatic ring, or optionally substituted 1-12C aryl.    An INDEPENDENT CLAIM is included for depositing the zinc oxide film, comprising (a) positioning a substrate in a deposition chamber, (b) vaporizing the composition, and (c) introducing, into the deposition chamber, a gaseous mixture comprising an oxygen source, such as water or an alcohol optionally containing less than 5C, and a doping product consisting of trimethylaluminum, triethylaluminum, tri-propylaluminum, diethyl ethoxide, dimethyl isopropoxide, tris(acetylacetonate) aluminum, tris(acetate) aluminum, tris(tetramethylheptadionate) aluminum, aluminum alkoxide, aluminum chloride, tris(dimethylamino) aluminum, trimethylgallium, triethylgallium, tri-propylgallium, diethylgallium ethoxide, dimethyl gallium, isopropoxide, tris(acetylacetonate)gallium, tris(acetate)gallium, tris(tetramethylheptadionate)gallium, gallium alkoxide, gallium chloride, tris(dimethylamino)gallium, diborane, trimethylborane, triethylborane, trimethylborate, tri-isopropylborate and 1,3,5-trimethylborazine.
NOVELTY - Ammonothermal group III metal nitride crystal having wurtzite crystal structure comprises a first large area surface having a maximum dimension greater than 10 mm and a pattern of locally-approximately-linear arrays of threading dislocations.    USE - The crystal is useful for: seed bulk crystal growth and as substrates for optoelectronic device, integrated circuits, transistors, LED, laser diodes, transistors, photodetectors, solar cells and for photoelectrochemical water splitting for hydrogen generation devices; and growing gallium nitride, aluminum nitride, indium nitride, indium gallium nitride, aluminum gallium nitride or aluminum indium gallium nitride.    ADVANTAGE - The crystal: is substantially free of other crystal structures, where the other crystal structures being less than 1 vol% in reference to a volume of the substantially wurtzite crystal structure, and substantially free of cracks (all claimed); exhibits high quality; provides large area substrates; and fabricates large-area group III metal nitride substrates, and high-performance LED and/or laser diodes that avoid potential issues associated with defective regions.
NOVELTY - Photovoltaic device (D1) comprises: (a) a substrate (102); (b) a conductive layer (104) formed on the substrate; (c) an absorber layer (106) formed on the conductive layer from a copper-zinc-tin containing chalcogenide material; (d) a cadmium including emitter layer (110) formed directly on the absorber layer; (e) an aluminum oxide including buffer layer (116) formed directly on the emitter layer including atomic layer deposition layer; and (f) a transparent conductor layer formed on the buffer layer.    USE - The photovoltaic device is useful in solar cells, panels and modules to provide power to electronic devices, homes, buildings, and vehicles.    ADVANTAGE - The photovoltaic device: has an efficiency of 8.5% (claimed); and utilizes copper-zinc-tin containing chalcogenide material in the absorber layer which is of low cost and is environmentally friendly.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a photovoltaic device (D2), comprising: (a)-(c) as above per se; an aluminum oxide including passivation layer formed in direct contact with the absorber layer and including an atomic layer deposition layer having a thickness of less than 25 Angstrom ; a cadmium including emitter layer formed in direct contact with the aluminum oxide including passivation layer; and a transparent conductor layer formed on the cadmium including emitter layer.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the photovoltaic device having a buffer layer formed by atomic layer deposition between an emitter and a transparent conductive layer.    Substrate (102)    Conductive layer (104)    Absorber layer (106)    Emitter layer (110)    Buffer layer (116)
NOVELTY - The antenna (100) has a first antenna inducing electromagnetic fields by using an RF signal. A second antenna induces electromagnetic fields by using the RF signal. A capacitor is connected between an input terminal of the first antenna and an input terminal of the second antenna. The capacitor is constituted by the first RF feed and the second RF feed. A dielectric is arranged between the first RF feed and the second RF feed. The first and second RF feeds are coaxially arranged with respect to each other.    USE - Plasma antenna for use in a plasma generating apparatus (all claimed) in a substrate treating apparatus manufacturing semiconductors, displays, solar cells.    ADVANTAGE - The plasma antenna improves coupling force between the two antennas constituting the dual antenna. The plasma antenna maintains mutual inductance between the two antennas when the two antennas are inductively coupled to each other. The plasma antenna achieves balance of current flowing into the two antennas in an efficient manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a plasma generating apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a substrate treating apparatus.    Substrate treating apparatus (10)    Plasma antenna (100)    Chamber body (231)    Dielectric cover (232)    Electrostatic chuck (510)
NOVELTY - Producing a nitride semiconductor crystal involves obtaining p-type conductivity by introducing C and O atoms simultaneously into the crystal by metal organic chemical vapor deposition process using as source materials an organic metal compound of a group III element, hydride of nitrogen, and an organic compound having any of partial structures C-C-O, C-C=O, C=C-O, C=C=O, C?=C-O, and C-O-C.    USE - For producing a nitride semiconductor crystal (claimed), used in electronic devices, such as light receiving and emitting devices (LEDs, semiconductor lasers, photodiodes, super luminescent diodes, phototransistors, solar cells), electronic devices other than light receiving and emitting devices (diodes, transistors, bipolar electronic devices, unipolar electronic devices, integrated devices), spintronics devices, photocatalyst devices, and electron tubes, and in semiconductor substrates, laser media, magnetic semiconductors, phosphors (luminescent, i.e. phosphorescent and fluorescent, materials).    ADVANTAGE - In a nitride semiconductor with a particularly high aluminum content, it is conventionally difficult to produce a low-resistance p-type. The method has good controllability.    DESCRIPTION OF DRAWING(S) - The figure shows perspective view of a substrate on which a nitride semiconductor layer is formed.    Substrate (11)    Nitride semiconductor layer (12)    P-type nitride semiconductor layer (13)
NOVELTY - A solar battery is prepared by selecting silicon with resistance of not greater than 6 Omega .cm, etching in 1-1.5% (m/v) sodium hydroxide solution at 75-80 degrees C for 14-16 minutes, forming small pyramid surface with surface size of 1-2 mu m, heating at 820 degrees C in furnace for 10 minutes to diffuse phosphorus source into phosphorus atom in which diffusion quantity is 1200-1400 sccm, forming high square resistance of PN junction, etching silicon sheet perimeter using gas plasma, removing conductive layer around silicon sheet, soaking in 10% hydrofluoric acid solution for 4 minutes.    USE - Preparation of solar battery (claimed).    ADVANTAGE - Preparation process is simple and convenient, and has improved utilization rate, improved production efficiency, and reduced product failure rate. Silicon sheet has high resistivity.    DETAILED DESCRIPTION - A solar battery is prepared by selecting silicon with resistance of not greater than 6 Omega .cm, etching in 1-1.5% (m/v) sodium hydroxide solution at 75-80 degrees C for 14-16 minutes, forming small pyramid surface with surface size of 1-2 mu m, heating at 820 degrees C in furnace for 10 minutes to diffuse phosphorus source into phosphorus atom in which diffusion quantity is 1200-1400 sccm, forming high square resistance of PN junction, etching silicon sheet perimeter using gas plasma, removing conductive layer around silicon sheet, soaking in 10% hydrofluoric acid solution for 4 minutes, plating silicon nitride layer, screen printing on silicon surface with conductive function of silver paste and aluminum paste, and sintering to form a good ohmic contact.
NOVELTY - A thin film solar cell is prepared by using single band difference super-lattice structure, using single band difference of super-lattice material, and performing pulsed laser deposition (PLD) technique.    USE - Preparation of thin film solar cell (claimed).    ADVANTAGE - Product has improved efficiency and simplified technology process.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of preparation of thin film solar cell using pulsed layer. (Drawing includes non-English language text).
NOVELTY - A microbiological fuel battery cathode preparation method involves utilizing an acceptor that comprises manganese ore powder and trivalent iron salt, and carrying out acid dipping treatment.    USE - Method for preparing microbiological fuel battery cathode for use as a graphite cathode (claimed).
NOVELTY - This utility new type claims a one focusing multi-junction gallium arsenide solar battery, to P-type silicon carbide substrate, from the substrate surface by the lower bottom in turn stacked with P-GaAs low temperature buffer layer, a high temperature P-GaAs buffer layer, bottom battery, battery in the top battery and the N + + -GaAs contact layer, wherein the bottom battery in battery and in the battery and the top battery is provided with a tunnelling junction connecting structure. Because the P-type silicon carbide substrate is a wide band gap semiconductor material with germanium substrate and the gallium arsenide substrate has high conducting hot coeffcient, so the battery can improve the stability and long-term reliability of low concentration. In addition, the battery using P-GaAs buffer layer between the silicon carbide substrate and the bottom battery, so as to solve the valid silicon carbide substrate and multi-junction gallium arsenide battery crystal lattice type different lattice constant and hot expanding difference large caused by coeffcient of epitaxial growth.
NOVELTY - A glass plate comprises glass composition including 45-60 %mass silicon dioxide, 8-18 %mass aluminum trioxide, 0-15 %mass boron trioxide, 1-40 %mass magnesium oxide, calcium oxide, strontium oxide, and barium oxide, 1-20 %mass strontium oxide, and 1-30 %mass sodium dioxide and potassium oxide, and has mass ratio of strontium oxide and barium oxide of 1 or more, and strain point of more than 590 degrees C.    USE - Glass plate is used for surface protective film (claimed) for thin film solar cell e.g. cadmium-telluride-type solar cell and compound semiconductor thin film solar cell.    ADVANTAGE - The glass plate has excellent strain point. The surface protective film obtained using the glass plate has excellent crack resistance, and washability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of glass plate; and    (2) surface protective film.
NOVELTY - A slurry comprising an organic binder and a raw material powder comprising oxygen, carbon, zinc and titanium is processed into a granulated powder by spray drying. The obtained granulated powder is filled in a metal container, and de-binder process is carried out. The resultant product is subjected to isotactic-pressing sintering, to obtain a zinc oxide-type sintered compact. The ratio of titanium is 0.2-5 %mass with respect to total number of metal atom. The tap density of granulated powder after de-binder process is 2.8 g/cm 3 or more.    USE - Manufacture of zinc oxide-type sintered compact used as target (claimed) for forming zinc oxide-type transparent conductive film. Uses include but are not limited to motor vehicle window, heat-ray reflective film, antistatic film, frozen showcase, solar cell, liquid crystal display element, light receiving element, touch screen, and organic/inorganic electroluminescent element.    ADVANTAGE - The method enables manufacture of zinc oxide-type sintered compact having high-density. The voltalization of zinc is suppressed during manufacture of zinc oxide-type sintered compact. The non-toxic zinc oxide-type transparent film formed using the zinc oxide-type sintered compact has excellent electroconductivity, and does not contain indium.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for target.
NOVELTY - The method involves injecting reactive gas such as chlorine trifluoride and xenon difluoride, within a vacuum chamber during etch action of a large area silicon substrate. The substrate is prepared within the vacuum chamber due to low reflection. Dry etching of plasma bandit is performed within the vacuum chamber for 5-40 minutes through blacking process of the substrate.    USE - Method for manufacturing a board for a solar cell.    ADVANTAGE - The method enables performing dry-type etching process without forming the plasma to form laminar flow of the reactive gas at processing condition so as to texture the substrate, reduce production cost and processing time and improve productivity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a solar cell manufacturing method    (2) a solar cell board.    DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view of a solar cell board.
NOVELTY - Ruthenium/palladium/carbon catalyst comprises palladium and ruthenium deposited on a carbon support. The nominal atomic ratio of ruthenium to palladium in the catalyst is 0.2-1.5.    USE - The ruthenium/palladium/carbon catalyst is useful for electro-oxidation of the formic acid in formic acid fuel cells (claimed).    ADVANTAGE - The catalyst activates itself when used in a formic acid fuel cell by spontaneous oscillations of the fuel cell voltage, which requires no external energy supply (claimed).    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) producing ruthenium/palladium/carbon catalyst comprising (a) providing palladium/carbon catalyst with a palladium crystallite size of less than 5 nm, and (b) subsequently depositing ruthenium on the produced palladium/carbon catalyst; and    (2) a formic acid fuel cell comprising a cathode, preferably palladium/carbon catalyst, an ion-conducting membrane, and an anode, preferably palladium catalyst refined with ruthenium, where the palladium catalyst refined with ruthenium is ruthenium/palladium/carbon catalyst.
NOVELTY - Manufacturing fiber reinforced composite comprises: laminating a fiber-reinforced composite material and a matrix impregnated with reinforcing fibers to prepare a laminate; heating the laminate; laminating a felt on a top of the laminate; hardening the laminate by applying heat and pressure to the surface of the fiber felt for welding the fiber of the fiber felt into the matrix; exposing a portion of the fiber felt to the surface of the fibers; raising temperature of the matrix; increasing the pressure to be applied to the laminate; and completely curing the laminate.    USE - The method is useful for manufacturing a fiber reinforced composite (claimed) that is useful as a separator of a polymer electrolyte membrane fuel cell and a redox flow battery.    ADVANTAGE - The method is capable of manufacturing the fiber reinforced composite without surface treatment, so that production cost can be reduced, and productivity can be improved.    DETAILED DESCRIPTION - Manufacturing fiber reinforced composite comprises: laminating a fiber-reinforced composite material and a matrix impregnated with reinforcing fibers to prepare a laminate; heating the laminate; laminating a felt on a top of the laminate; hardening the laminate by applying heat and pressure to the surface of the fiber felt for welding the fiber of the fiber felt into the matrix; exposing a portion of the fiber felt to the surface of the fibers so that the exposed fiber portion of the laminate is cured; raising temperature of the matrix; increasing the pressure to be applied to the laminate; and completely curing the laminate by increasing the temperature to a glass transition temperature.
NOVELTY - The method involves forming photoactive layer that consists of mixed layer of n-type semiconductor nanostructure and p-type phthalocyanine nanostructure. The mixed layer of n-type semiconductor nanostructure and p-type phthalocyanine nanostructure is dispersed in water. The p-type phthalocyanine nanostructure is condensed, recrystallized, and disappeared.    USE - Method for manufacturing organic solar cell device.    ADVANTAGE - Since the mixed layer of n-type semiconductor nanostructure and p-type phthalocyanine nanostructure is dispersed in water, the organic solar cell can be manufactured in environment-friendlily manner.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the solar sell device. (Drawing includes non-English language text)
NOVELTY - A copper-gallium alloy sputtering target comprises 22-29 atomic% gallium and remainder of copper and unavoidable impurities, and is in dissolved and casted form. The sputtering target has an eutectoid structure comprising mixed phase of zeta-phase, which is an intermetallic compound layer of copper and gallium, and ( gamma ) phase, and satisfies specific relation.    USE - Copper-gallium alloy sputtering target is used for copper indium gallium selenide-type solar cell.    ADVANTAGE - The copper-gallium alloy sputtering target having excellent quality, is manufactured economically with reduced oxygen content, and provides solar cell having excellent conversion efficiency.    DETAILED DESCRIPTION - A copper-gallium alloy sputtering target comprises 22-29 atomic% gallium and remainder of copper and unavoidable impurities, and is in dissolved and casted form. The sputtering target has an eutectoid structure comprising mixed phase of zeta-phase, which is an intermetallic compound layer of copper and gallium, and ( gamma ) phase, and satisfies the relation: D less than or equal to 7x C-150, where D ( mu m) is diameter of the ( gamma )phase and C is (atomic%) concentration of gallium. An INDEPENDENT CLAIM is included for manufacture of copper-gallium alloy sputtering target.
NOVELTY - An oxide sinter contains zinc, and element(s) (X) (excluding case in which magnesium alone is added) having an ionization potential (Ip) of 4.5-8 eV, and an atomic radius (d) of 1.2-2.50 Angstrom , and has sintered density of at least 95%. The atomic ratio of element (X) and sum of zinc and element (X) is 0.0001-0.2.    USE - Oxide sinter is used for sputtering target for forming oxide thin film for solar cell (all claimed).    ADVANTAGE - The solar cell containing the oxide sinter has improved conversion efficiency.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) solar cell; and    (2) manufacture of photoelectric conversion device.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the solar cell containing the oxide sinter.    Substrate (1)    Lower electrode film (2)    P-type-semiconductor layer (3)    N-type buffer layer (4a)    N-type-semiconductor layer (4b)
NOVELTY - The cell has a first group of subcells lattice matched to a first substrate. A second group of subcells is lattice matched to a second substrate, where the second group of subcells is bonded to the first group of subcells and one of three subcells comprises a base layer with alloy of elements of groups on a periodic table. The first group of subcells comprises an epitaxial Germanium substrate overlying a Silicon substrate. The second substrate comprises a thinned substrate bonded to the first group of subcells. The second substrate is removed from the second group of subcells.    USE - Lattice-matched multijunction solar cell.    ADVANTAGE - The cell anneals the groupings of the subcells grown on the substrate by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) in-situ or post-growth at temperatures so as to optimize performance of the grouped subcells and the multijunction solar cell, thus improving lattice-matching and improving reliability, and hence enhancing temperature bonding process diffusion by additional heat treatment after the wafer bonding process to optimize performance of the solar cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a multijunction solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure illustrating a method for manufacturing a multi- junction solar cell comprising a Arsenic n-plus region and a p-type Germanium substrate.
NOVELTY - A silicon carbide thin film is formed on a substrate (10). A metal thin film is formed on the silicon carbide thin film, and heated to obtain a metal composite layer (14) and graphene (13) on the substrate.    USE - Manufacture of graphene used for fabricating display device and electronic device (all claimed). Uses include but are not limited to electronic paper display device, organic light emitting device, liquid crystal display device, sensor, bipolar junction transistor, heterojunction bipolar transistor, single electron transistor, light emitting diode and solar cell.    ADVANTAGE - The method enables manufacture of graphene with excellent conductivity, and light transmission property.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication of a device.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of structure explaining manufacture of graphene.    Substrate (10)    Graphene (13)    Metal composite layer (14)
NOVELTY - Method of controlling orientation of growth of metal oxide semiconductor nanostructure involves performing thermal chemical vapor deposition method by growing a source material into the nanostructure having polar surface (110a) and non-polar surface (110b), and reducing the surface energy of the polar surface having a wurtzite crystal structure. The source material contains a source for nanostructure and a thermal decomposition material. The surface energy reduction of polar surface during the control process is carried out using the thermal decomposition material.    USE - Method of controlling orientation of growth of metal oxide semiconductor nanostructure used for semiconductor devices (claimed) e.g. sensor, light-emitting device, solar cell, and energy-harvesting device, and electronic device.    ADVANTAGE - The method enables the effective control of orientation of growth of metal oxide semiconductor nanostructure having excellent semiconductor property, piezoelectric property, transparency, biocompatibility, and photo-physical properties, by simple process.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) metal oxide semiconductor structure;    (2) semiconductor device; and    (3) growing of metal oxide semiconductor crystal.    DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of the growth of zinc oxide wires in the non-polar direction.    Zinc oxide wire (110)    Polar surface (110a)    Non-polar surface (110b)
NOVELTY - A composite material comprises corrosion-resistant nickel-based alloy, aluminum or aluminum alloy, and titanium diffused layer having thickness of 1-50 mu m between the corrosion-resistant nickel-based alloy, aluminum or aluminum alloy.    USE - Composite material is used for silicon wafer, semiconductor, liquid crystal, and photovoltaic solar cell panel.    ADVANTAGE - The composite material has excellent corrosion resistance property, strength, adhesiveness, uniform-heating property and thermal conductivity.
NOVELTY - The method involves alkaline texturing of a front surface (32) of a semiconductor wafer (30), where a back surface (34) of the semiconductor wafer is not masked against the alkaline texturing, so that the back surface is enlarged than the front side surface. P-N junction process is performed by the semiconductor wafer. The back surface is subjected to wet-chemical etching process to smoothen the back surface such that chemical edge insulation of the semiconductor wafer is done with P-N junction.    USE - Method for surface treating a monocrystalline semiconductor wafer for manufacture of solar cells in an inline plant.    ADVANTAGE - The back surface is subjected to wet-chemical etching process to smoothen the back surface such that such that the chemical edge insulation of the semiconductor wafer is done with the P-N junction, thus surface treating the semiconductor wafer in a simple and inexpensive manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a monocrystalline semiconductor wafer solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic partial cross-sectional view of a semiconductor wafer subjected to a process for producing a semiconductor-wafer solar cell.    Semiconductor wafer (30)    Front surface of semiconductor wafer (32)    Back surface of semiconductor wafer (34)    Front face electrode structure (42)    Back electrode structure (44)
NOVELTY - The enclosed-channel reactor system comprises: a reactor body (21) provided with a set of enclosed channels; an inlet cap (22) that is connected with the reactor body at an upstream side (25) and has an inlet end, which links enclosed channels with the reactor body; and an outlet cap (23) that is connected with the reactor body at a downstream side (26) and has an outlet end, which links enclosed channels with the reactor body. The reactor body has a cylindrical or polygonal contour.    USE - The enclosed-channel reactor system is useful for preparing catalysts or support materials (claimed) that are used to increase a reaction rate of fuel cells.    ADVANTAGE - The system provides a better reactor design, and improves the utilization efficiency and reduces consumption and manufacturing cost of the catalyst.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing catalysts or support materials.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of an enclosed-channel reactor system.    Reactor body (21)    Inlet cap (22)    Outlet cap (23)    Upstream side of the reactor body (25)    Downstream side of the reactor body. (26)
NOVELTY - The device has an evacuated and heated reaction chamber (1) that is connected with an evaporator chamber (2). The evaporator chamber is equipped with a pair of separately controllable heating element (5,6) at the transition ends of the reaction chamber. The heating elements of the evaporator chamber are resistant to thermal radiation from the outside of the evaporator chamber with a shielding element (7), such that the temperature of the heating elements is adjusted.    USE - Device for adjusting gaseous phase in reaction chamber for use in production of solar cells.    ADVANTAGE - The reactivity of the gas phase in the reaction chamber with the arranged substrate is increased. The resistant to thermal radiation of the heating elements from the outside of the evaporator chamber are facilitated. Therefore, the production of the evaporation source is facilitated, and the required welds are reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the device for adjusting gaseous phase in reaction chamber.    Device for adjusting gaseous phase in reaction chamber (1)    Evaporator chamber (2)    Controllable heating elements (5,6)    Reaction chamber (7)    Substrate (8)
NOVELTY - An argon ion is irradiated to cerium-oxide nanoparticles layer of nano-order thickness formed on a substrate, to obtain fluorite-type undoped cerium-oxide nanoparticles which contain 75% or more cerium (III) ion, and maintain atmospheric stability.    USE - Production of fluorite-type undoped cerium-oxide nanoparticles (claimed) used for fuel cell material, oxygen storage material, and exhaust gas catalyst for motor vehicles.    ADVANTAGE - Since the oxygen diffusion from the inside of fluorite-type undoped cerium-oxide nanoparticles is restrained, high concentration cerium (III) ion is maintained stably under room temperature with humidity of 60% or less for 2 months or more even after heat exposure at 300 degrees C/10 minutes. The oxidation from the back side of argon-ion irradiation surface is suppressed using a substrate.
NOVELTY - An electrically conductive paste composition comprises electroconductive powder, glass frit, tellurium compound, and a vehicle. The glass frit contains lead and tellurium in molar ratio of 0.4-5.5, and glass containing 3-30 mol% lithium oxide, 28-60 mol% lead oxide, 3-18 mol% boron trioxide, and 10-40 mol% silicon dioxide, in conversion of oxide.    USE - Electrically conductive paste composition is used for solar cell for solar cell module.    ADVANTAGE - The electrically conductive paste composition provides solar cell having excellent electrical property, fill factor value and output characteristics.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of solar cell.    Solar cell (10)    Solar cell module (12)    Sealing material (14)    Surface glass (16)    Protective film (18)
NOVELTY - A cadmium telluride thin film solar battery preparation method involves placing mixture of copper powder and ammonium chloride powder or copper chloride ammonium powder in a container, carrying out a heating process, and forming a cadmium telluride layer by using a condensation process and gas in the container.    USE - Method for preparing a cadmium telluride thin film solar battery.    ADVANTAGE - The method enables preparing a cadmium telluride thin film solar battery with high conversion efficiency and reduced battery area of 0.49 cm2.
NOVELTY - A laminated metal base composite material is prepared by removing oil from platinum (Pt) metal foil by etching and ultrasonically cleaning, Pt metal surface plating molybdenum (Mo) using direct current (DC) electroplating device to obtain Pt/Mo plating sample, 1st time annealing Pt/Mo plating sample under inert atmosphere protection to obtain annealed Pt/Mo plating sample, silver (Ag) plating surface of Pt/Mo plating sample using DC electroplating device to obtain Pt/Mo/Ag plating sample, and 2nd time annealing Pt/Mo/Ag plating sample under inert atmosphere protection.    USE - Preparation of laminated metal base composite material for solar battery array interconnection chip (claimed).    ADVANTAGE - The laminated metal base composite material has high tensile strength and excellent oxidation resistance, heat impact resistance, conductivity, wear resistance, and weldability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for solar battery array interconnection chip comprising the composite material and a gallium arsenide solar cells having weld tensile strength of 324 gram power after carrying out single point spot welding resistance.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional diagram of laminated Pt/Mo/Ag metal base composite material.    Platinum base metal (1)    Intermediate layer of molybdenum metal (2)    Silver metal surface (3)
NOVELTY - A spiro(fluorene-9,9'-xanthene) derivative (I) is new.    USE - 2,7-dibromo-spiro(fluorene-9,9'-xanthene) derivative used for organic electric storage device, organic solar battery, organic laser diode device and organic field effect tube.    ADVANTAGE - The method is simple.    DETAILED DESCRIPTION - A spiro(fluorene-9,9'-xanthene) derivative of formula (I) is new. An INDEPENDENT CLAIM is included for preparation of spiro(fluorene-9,9'-xanthene) derivative (I).
NOVELTY - A transparent-conductive-film laminate (2) has a structure, which consists of an indium-oxide transparent conductive film (21) and zinc-oxide transparent conductive film (22) formed on the film (21), provided on top of a translucent substrate (1). The film (21) has surface roughness of 1 nm or less. The laminate has surface roughness of 30 nm or more, haze rate of 8% or more, sheet resistance of 30 Omega /square or less, and average absorption factor of 15% or less with respect to light having wavelength of 400-1200 nm.    USE - Transparent-conductive-film laminate is used in thin film solar cell (claimed). Uses include but are not limited to liquid crystal display element, light receiving element, motor vehicle window, heat ray reflective film for construction, antistatic film and frozen showcase.    ADVANTAGE - The transparent conductive film laminate has low light absorption loss and excellent optical confinement effect, and enables simple and economical manufacture of highly efficient thin film solar cell with improved productivity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of transparent-conductive-film laminate; and    (2) manufacture of thin film solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the thin film solar cell.    Translucent substrate (1)    Transparent conductive film laminate (2)    Amorphous photoelectric conversion unit (3)    Indium-oxide transparent conductive film (21)    Zinc oxide transparent conductive film (22)
NOVELTY - A solar cell comprises semiconductor nanocrystals (SCNs) containing groups II and VI elements.    USE - A solar cell (claimed).    ADVANTAGE - The SCNs have increased photostability, high quantum yield, and high optical efficiency and can be easily made biocompatible by using conventional functionalization methods for nanocrystals.    DETAILED DESCRIPTION - A solar cell comprises semiconductor nanocrystals of formula W'Y'xZ(1-x) (2-6-6 SCNs).    W'=group II element;    Y', Z=group VI elements which are not the same; and    x=0-1.    INDEPENDENT CLAIMS are included for:    (1) organic light emitting device containing 2-6-6 SCNs; and    (2) solid-state LED containing 2-6-6 SCNs.
NOVELTY - A polyethylene terephthalate film has crystallization temperature of 145-160 degrees C, and crystallization temperature peak-width of 10-25 degrees C. When the polyethylene terephthalate film is measured in Fourier-transform-type infrared spectroscopy, the ratio of spectral intensity (r1) observed at 1388 cm-1 and spectral intensity (r2) observed at 1372 cm-1 is 0.7-0.94, and the ratio of spectral intensity (r3) observed at 988 cm-1 and spectral intensity (r4) observed at 971 cm-1 is 0.6-0.73.    USE - Polyethylene terephthalate film is used for insulating material. Uses include but are not limited to solar cell backsheet, compressor motor for air-conditioner, capacitor and automobiles.    ADVANTAGE - The polyethylene terephthalate film has excellent heat-and-moisture resistance, planarity, and heat resistance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of polyethylene terephthalate film.
NOVELTY - The cell has a glass substrate (1) on which a transparent conductive layer (2) and an absorber layer (4) are formed. The absorber layer is provided with a metal contact (5). Matrix-form metal oxide nano-rods (3) are arranged on the transparent conductive layer along a cross-section direction of the metal contact. The absorber layer covers the metal oxide nano-rods with a flat surface along a vertical direction. A seed layer for deposition of zinc oxide-nano-rods is placed on the transparent conductive layer. The metal oxide nano-rods are made of titanium dioxide or magnesium oxide.    USE - Nano-structured superstrate solar cell i.e. thin-film silicon solar cell.    ADVANTAGE - The absorber layer covers the matrix-form metal oxide nano-rods with the flat surface along the vertical direction, so that light coupling effect in the thin film silicon solar cells can be improved, thus improving efficiency of the solar cell with inexpensive manufacture. The solar cell increases color absorption, transparency and high conductivity of the transparent conductive layer by texturing the optical light path.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a superstrate solar cell.    Glass substrate (1)    Transparent conductive layer (2)    Metal oxide nano-rods (3)    Absorber layer (4)    Metal contact (5)
NOVELTY - They system (2) has an introducer (3) that introduces the gas which does not mutually react with other gas in circulation type pipe (1) into the circulation type pipe. The circulation type pipe circulates the gas which is introduced from introducer. An extraction device (4) extracts out the desired gas which is circulated through circulation type pipe.    USE - Gas circulation system used in vehicle such as fuel cell electric vehicle.    ADVANTAGE - The gas circulation system can be used effectively by storing gas in circulation type pipe. The wastage of energy in gas circulation system can be reduced effectively. The environmental system can be efficiently assembled by introducing and conveying required gas from circulation type pipe at required place.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of the gas circulation system. (Drawing includes non-English language text)    Circulation type pipe (1)    Gas circulation system (2)    Introducer (3)    Extraction device (4)
NOVELTY - A coating composition comprises tetraalkoxy silane (A-1) and/or organoalkoxysilane (A-2), aminosilane (A-3), epoxy silane (A-4), block isocyanate silane (A-5), silane compound (A-6) containing double bond between carbons, organic polymer microparticles (B), curing catalyst (C), and dispersion medium (D).    USE - A coating composition for cured material used for laminated body (all claimed) used in plasma display, liquid crystal display, organic electroluminescent display, mobile telephone components, touch screen, and solar cell.    ADVANTAGE - Cured material of coating composition exhibits excellent adhesion to polyethylene terephthalate film.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) manufacture of coating composition which involves preparing and mixing components (A-1) and/or (A-2), (A-3), (A-4), (A-5), (A-6), (B), (C), and (D);    (2) laminated body in which cured film is formed on polyethylene terephthalate film; and    (3) manufacture of laminated body which involves coating the coating composition on polyethylene terephthalate film and curing by heating or UV irradiation.
NOVELTY - An adhesive composition comprises a polyisobutylene type-resin having a mass mean molecular weight of 20000 or more, styrene-type copolymer(s) chosen from styrene-butadiene-styrene triblock copolymer, styrene-block-(ethylene-co-butylene)-block-styrene triblock copolymer, styrene-isobutylene diblock copolymer, and/or styrene-isobutylene-styrene triblock copolymer (SIBS), and a tackifier having a softening point of 135 degrees C or less.    USE - Adhesive composition is used for forming adhesive layer of adhesive sheets used in sealing applications of organic electroluminescent elements (all claimed) e.g. organic transistors, organic memories, LCDs, electronic paper, thin-film transistors, electrochromic devices, electrochemical light-emitting devices, touchscreens, solar cells, thermoelectric conversion devices, piezoelectric conversion devices, electrical storage devices. Can also be used for temporarily fixing electronic material to glass plate, substrate, etc.    ADVANTAGE - The adhesive composition forms adhesive sheets having excellent adhesion performance characteristics, transparency, and effect of preventing invasion of water. The adhesive sheet suppresses deterioration in characteristics of organic electroluminescent elements.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for adhesive sheet (1a) having an adhesive layer (12) comprising the adhesive composition.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the adhesive sheet.    Adhesive sheet (1a)    Base material (11)    Adhesive layer (12)    Peeling sheet (13)
NOVELTY - A semiconductor film consists of an aggregate of semiconductor quantum dots containing a metal atom, and a ligand chosen from amine-containing ligands (I), (II) and (III), coordinated to each semiconductor quantum dot.    USE - Semiconductor film is used for solar cells (e.g. PN junction type solar cell), LEDs, thin-film transistors, and electronic device (all claimed).    ADVANTAGE - The semiconductor film has high photoelectric current and excellent film peeling strength.    DETAILED DESCRIPTION - A semiconductor film consists of an aggregate of semiconductor quantum dots containing a metal atom, and a ligand chosen from amine-containing ligands of formulae (I), (II) and (III), coordinated to each semiconductor quantum dot.    X1,X2=-SH, -NH2 or -OH;and    A1-A3,B'1,B'2=H or substituents having 1-10 atoms.    When both A1 and B'1 are H, X1 is -SH or -OH. An INDEPENDENT CLAIM is included for manufacture of semiconductor film, which involves providing a semiconductor quantum dot dispersion containing solvent (I) and ligand (I) coordinated to each dot on a substrate and forming aggregate of semiconductor quantum dots with a molecular chain shorter than the ligands, applying a solution containing solvent (II) and ligand (II) chosen from ligands (I)-(III), and carrying out ligand-exchange process.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a pn junction type solar cell using the semiconductor film.    Transparent substrate (10)    Transparent conductive film (12)    P-type semiconductor layer (14)    N-type semiconductor layer (16)    PN junction type solar cell (100)
NOVELTY - Controlling specific surface area of niobium-doped titanium dioxide nanofiber, comprises electrospinning niobium precursor while controlling its content (0.1-60 wt.%) based on titanium precursor.    USE - The nanofiber is useful for applying on catalyst carrier, transparent conductive oxides material, solar cell (claimed), fuel cell, photocatalyst and secondary battery.    ADVANTAGE - The method produces anatase-, rutile-, and corrugated-type nanofiber having high specific surface area.
NOVELTY - Liquid silicone layer (2,4) is coated to the white board glass surface panel (5) and the back surface panel (1). The back surface panel is laminated to the surface panel to form a photovoltaic cell (3) after hardening the silicone layer by irradiating an ultraviolet-ray to the back surface panel and the surface panel. The liquid silicone includes platinum as a catalyst.    USE - Manufacturing method of solar cell module (claimed) used for photovoltaic power generation.    ADVANTAGE - A solar cell module with high durability can be manufactured in which silicone sealing is carried out with an unprecedented simple manufacturing method.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for solar cell module.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the solar cell module.    Back surface panel (1)    Silicone layer (2,4)    Photovoltaic cell (3)    Surface panel (5)    Solar cell module (10)
NOVELTY - The fabrication method involves forming a patterned resist layer over anti-reflective coating layer (220) of solar cell structure then etching away an exposed portion of anti-reflective coating layer using the patterned resist layer to expose a portion of a surface (211,212) of solar cell structure. A metal seed layer having a first portion extending over the patterned resist layer and a second portion (252) extending over exposed portion of the surface of the solar cell structure, is formed then selectively removing the first portion of the metal seed layer, and the patterned resist layer.    USE - Fabrication method of solar cell structure.    ADVANTAGE - Improves manufacturing efficiency by facilitating simultaneous fabrication of conductive patterns over solar cell structures.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the solar cell structure.    Substrate (210)    Surface (211,212)    Anti-reflective coating layer (220)    Second portion (252)    Conductive material (300)
NOVELTY - A one high reflecting solar battery back film, comprising a base layer, is coated on the outer surface of a base layer of a reflecting layer, a base layer and a surface of the bottom layer. This utility new type using high whiteness of spherical or pyramid structure, which increases the area of the absolute reflection to increase diffuse reflection power of the solar cell module , so as to increase the total capacity of the photovoltaic module. And using of processing process is more simple, the rate of finished products is high.
NOVELTY - Preparing a polymer particle comprises: mixing a radical polymerizable monomer with a chain transfer agent, and performing a polymerization reaction with the polymer having an average molecular weight of 10000-100000 g/mol to prepare a polymeric resin; drying and forming an air gap; and preparing a spherical polymer particle through a chemical crushing process and dispersing into the immiscibility solvent which is insoluble about the polymer resin and an air gap structuring agent.    USE - The method is useful for preparing a polymer particle (claimed) that is used in a fuel cell, a conduction ball, a toner, a drug carrier and a column filler.    ADVANTAGE - The polymer particle is prepared in a simple manner with high volume concentration and increased specific surface area, and is recyclable.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a polymer particle having a specific surface area of 30-80 m2/g, and the pore volume of 0.01-0.8 ml/g, and a particle size of 0.5-100 mu m.
NOVELTY - A cleaning agent contains 2-15 g potassium hydroxide, 1-5 g surfactant, 1-3 g osmotic agent, and 1-5 g chelating agent.    USE - A cleaning agent for monocrystalline silicon solar cells (claimed).    ADVANTAGE - The agent has good cleaning effect, is low cost, environment-friendly, and safe.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for use of cleaning agent for monocrystalline silicon solar cells which involves diluting cleaning agent to 10-20 times.
NOVELTY - Low-surface concentration diffusion method involves placing silicon wafer in a diffusion furnace, then introducing phosphorus source into the furnace at 800-820 degrees C such that phosphorus is diffused on the silicon wafer, introducing nitrogen and oxygen into the furnace at 800-820 degrees C such that oxygen is diffused on the silicon wafer, then introducing nitrogen into the furnace at 850-870 degrees C such that nitrogen is diffused on the silicon wafer, introducing nitrogen into the furnace at 740-780 degrees C, and baking the resultant silicon wafer under nitrogen protection atmosphere.    USE - Low-surface concentration diffusion method for producing P-N junction during manufacture of solar cell.    ADVANTAGE - The P-N junction formed by low-surface concentration diffusion process improves photoelectric conversion efficiency of the solar cell.
NOVELTY - A cathode material with double perovskite structure, is a powder material comprising a complex oxide of praseodymium, barium and cobalt, with metal cation vacancy.    USE - Cathode material with double perovskite structure, is used in intermediate-temperature solid oxide fuel cells.    ADVANTAGE - The cathode material has excellent catalytic oxygen reduction efficiency even at low temperatures.    DETAILED DESCRIPTION - A cathode material with double perovskite structure, is a powder material comprising a complex oxide of praseodymium, barium and cobalt, of formula: Pr1-xBa1-yCo2O5+d, where x and y are greater than 0 and 0.1 or less, and d is 0.3-0.5, with metal cation vacancy. An INDEPENDENT CLAIM is included for preparation of cathode material.
NOVELTY - The microreactor has an end plate (28), a combustion catalyst plate (27), a combustion channel plate (26), a reforming catalyst plate (25) and a reforming channel plate (24) stacked and assembled, where a set of combustion catalyst-filled parts and a set of combustion catalyst-unfilled parts are present in first and second portions of the entire combustion catalyst plate, the catalyst-filled parts are formed linearly from a reactant inlet to a product outlet in parallel with a flow direction of reactants, and the catalyst-unfilled parts exist alternatingly with the catalyst-filled parts.    USE - Microreactor for reforming hydrocarbon i.e. methane, while performing endothermic reaction and an exothermic reaction in a petrochemical industry. Can also be used in a fuel cell i.e. polymer electrolyte membrane fuel cell (PEMFC) and a Fischer-Tropsch process.    ADVANTAGE - The method enables exhibiting higher productivity, reducing manufacturing time and cost due to decreased size and weight and improved safety with superior material and heat transfer performance and improved reaction rate, so that uniform temperature distribution can be achieved throughout the combustion plate, thus lowering highest temperature of a reactor and decreasing temperature gradient, and hence solving problems of degradation of catalyst and lowering of reactor durability and thermal deformation.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a microreactor, where a set of combustion catalyst-filled parts is formed linearly from a reactant inlet to a product outlet perpendicularly along flow direction of reactants and a set of combustion catalyst-unfilled parts exist alternatingly with the combustion catalyst-filled parts.    Reforming channel plates (20, 24)    Reforming catalyst plates (21, 25)    Combustion channel plates (22, 26)    Combustion catalyst plates (23, 27)    End plate (28)
NOVELTY - The method involves melting and pressurizing an electrically conductive composition (11A) supplied to a T-die (12) with an extruder. The electrically conductive composition is extruded to a film form from a lip part (12A) of the T-die, where temperature of the lip part is 280 degree celcius. The electrically conductive composition is cooled by a cooling roller (13) immediately after extrusion and is extended by rotation of the cooling roller between the T-die and the cooling roller, where the electrically conductive composition is pressed to the cooling roller using a rubber roll (15).    USE - Method for manufacturing an electroconductive film utilized for a battery e.g. lithium ion battery and fuel cell, and as an antistatic unit and electromagnetic wave shield unit.    ADVANTAGE - The method enables cooling the electrically conductive composition by the cooling roller immediately after extrusion such that the electrically conductive composition is extended by rotation of the cooling roller between the T-die and the cooling roller, so that mixture ratio of the electroconductive filler can be reduced, thus providing the electroconductive film with excellent surface smoothness.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure illustrating a manufacturing method of an electroconductive film.    Electrically conductive composition (11A)    T-die (12)    Lip part (12A)    Cooling roller (13)    Rubber roll (15)
NOVELTY - A solvent for evanescent binder resin used for manufacture of electronic components, such as multilayer ceramic, plasma display, and solar cell, contains methyl butanetriol.    USE - A solvent for evanescent binder resin (claimed) used for manufacture of electronic components, such as multilayer ceramic, plasma display, and solar cell.    ADVANTAGE - The solvent has excellent solubility of binder resin and good volatility, viscosity of binder resin solution can be adjusted, and electronic component using electroconductive and dielectric paste can be manufactured more simply.    DETAILED DESCRIPTION - A solvent for evanescent binder resin contains methyl butanetriol of formula (1).    R1, R2=H provided that the other is OH.
NOVELTY - The battery (100) has a winding electrode body (20) containing an elongate-sheet-like positive electrode (30) and an elongate-sheet-like negative electrode (40) that are accommodated in a square-shaped battery case (10). A non-aqueous electrolyte (25) is supplied to the battery case. Ladder-like/basketlike silsesquioxane supplied from the non-aqueous electrolyte exists in a vicinity of the negative electrode. The positive electrode is provided by which a positive electrode active material layer (34) is formed on a positive electrode electrical power collector (32).    USE - Lithium ion secondary battery for use in a vehicle e.g. motor vehicle, hybrid vehicle such as plug-in hybrid motor vehicle, and electric vehicle such as fuel cell electric vehicle.    ADVANTAGE - The battery is provided in which formation of a solid electrolyte inter-phase membrane (SEI) can be suppressed using the silsesquioxane on the negative electrode such that fall of the battery capacity can be suppressed by the silsesquioxane in the non-aqueous electrolyte.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a lithium ion secondary battery.    Square-shaped battery case (10)    Winding electrode body (20)    Non-aqueous electrolyte (25)    Elongate-sheet-like positive electrode (30)    Positive electrode electrical power collector (32)    Positive electrode active material layer (34)    Elongate-sheet-like negative electrode (40)    Lithium ion secondary battery (100)
NOVELTY - A cathode catalyst comprises 75-99.7 wt.% nanocarbon, 0.2-15 wt.% dopant and 0.1-10 wt.% transition metal. Catalyst has porous nanostructure doped with nitrogen, phosphorus and/or boron. Mass ratio of nitrogen, phosphorus and/or boron is 5:1-100:1. Catalyst is prepared by taking conductive polymer precursor, polymerizing in weakly acidic condition, adding transition metal salt, phosphorus-containing compound and/or boron-containing compound, oxidizing, drying, and performing high-temperature pyrolysis.    USE - Cathode catalyst for fuel cells, i.e. proton exchange membrane fuel cell and direct methanol fuel cell (claimed).
NOVELTY - A graphite reinforced composite material (4) has single (411) or multiple graphene layer formed from highly graphitized graphene dispersion and substrate (43) where graphene layer is uniformly dispersed.    USE - Graphite reinforced composite material for e.g. thermal grease, conductive glue, printing circuit plate, light emitting diode, LCD, solar battery, pressure sensor, surface acoustic wave filter, resonator, transistor, capacitor, transparent laser, UV laser, and/or DNA chip (all claimed).    ADVANTAGE - The material has perfect plane of single graphene layer and improved physical and chemical properties.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of graphite reinforced composite material which involves dispersing highly graphitized graphene dispersion in solvent to form solution, adding dispersant, fully mixing to obtain single or multiple graphene layer, and mixing solution with substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a micro-structural schematic diagram of a graphite reinforced composite material.    Graphite reinforced composite material (4)    Substrate (43)    Single layer graphene (411)
NOVELTY - A porous silicon material is prepared by carrying out in-situ catalytic reaction of raw material silicon and mineralizing agent in organic solvent under presence of transition metal oxide as catalyst in reactor to obtain hole structure.    USE - Preparation of porous silicon material for making integrated circuit, solar cell, photovoltaic device, and lithium-ion battery (all claimed).    ADVANTAGE - Process is simple, low cost, and is environment-friendly, and has controllable parameters and reaction conditions.    DESCRIPTION OF DRAWING(S) - The drawing shows a scanning electron microscope image of porous silicon material.
NOVELTY - A 2,7-dibromo-spiro(fluorene-9,9'-xanthene) derivative (I) is new.    USE - 2,7-dibromo-spiro(fluorene-9,9'-xanthene) derivative used for organic electric storage device, organic solar battery, organic laser diode device and organic field effect tube.    ADVANTAGE - The method is simple.    DETAILED DESCRIPTION - A 2,7-dibromo-spiro(fluorene-9,9'-xanthene) derivative of formula (I) is new.    R=sec. amino, pyrrolyl, indolyl, carbazolyl, benzimidazolyl or derivative.    An INDEPENDENT CLAIM is included for preparation of 2,7-dibromo-spiro(fluorene-9,9'-xanthene) derivative (I).
NOVELTY - Producing hollow carbon black comprises oxidizing carbon black using an oxidizing gas.    USE - The method is useful for producing a hollow carbon black that is useful in a carbon support of a secondary battery and as a carrier for a fuel cell electrocatalyst (all claimed), a black pigment, fillers and reinforcing agents.
NOVELTY - A 60C powder and 70C powder are mixed (S1) in predetermined preparation amount and organic solvent is distributed. A poor solvent of fullerene is poured in equal volume amount into mixed solution. The obtained liquid-liquid interface is forced mixed and nucleus of 60C is produced (S2). A two-ingredient fullerene nano whisker of length and diameter is manufactured (S3) and left in a solution containing uniformly disperse nucleus at 15 degrees C for two days. The nucleus is crystal-grown. Thus, control method of diameter and length of two-ingredient fullerene nano whisker is performed.    USE - Control method of diameter and length of two-ingredient fullerene nano whisker used in solar cell industry and semiconductor device industry.    ADVANTAGE - The method enables control of diameter and length of two-ingredient fullerene nano whisker with reduced fluctuations.    DETAILED DESCRIPTION - A 60C powder and 70C powders are mixed in predetermined preparation amount and an organic solvent is distributed. A poor solvent of the fullerene is calmly poured in an equal volume amount into the mixed solution to form a liquid-liquid interface. The liquid-liquid interface is forced mixed and nucleus of 60C is uniformly produced in solution. A two-ingredient fullerene nano whisker of length and diameter is manufactured. The two-ingredient fullerene nano whisker is left in a solution containing uniformly disperse nucleus at 15 degrees C for two days. The nucleus is crystal-grown. Thus, control method of diameter and length of two-ingredient fullerene nano whisker is performed.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of flowchart explaining control method of diameter and length of two-ingredient fullerene nano whisker.    Mixed-solution preparation process (S1)    Crystal-nucleation process (S2)    Two-ingredient fullerene nano whisker manufacturing process (S3)
NOVELTY - The semiconductor device has a field insulating film that covers a portion of a surface of an n-type silicon carbide (SiC) epitaxial layer. A portion of the surface of the SiC epitaxial layer is comprised of a field region (15) and an active region (13) surrounded by the field region. An electric field moderating portion is positioned in a portion of the field region closer to the active region. A top surface of the electric field moderating portion is formed lower than a surface of the active region. The electric field moderating portion is formed with a p-type layer.    USE - Semiconductor device e.g. Schottky barrier diode used in power electronics e.g. power module of phase inverting circuit for driving electric motor used as power source in electric and hybrid vehicles, trams, and industrial robots as well as for performing conversion for matching electricity generated by solar cell, wind turbine and household power generating device with electricity from commercial power supply.    ADVANTAGE - The barrier height between the Schottky electrode connected to the surface of the semiconductor layer and the semiconductor layer can be decreased, thus reducing the reverse leakage current even if a reverse voltage close to a breakdown voltage is applied. Hence the overall reverse leakage current and forward voltage of the Schottky barrier diode can be effectively reduced. Thus the voltage resistance performance of the wide bandgap semiconductor can be fully exerted.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic and enlarged views of the Schottky barrier diode.    Active region (13)    Opening (14)    Field region (15)    Trapezoidal trench (17)    Ring-shaped trench (32)
NOVELTY - The method involves forming a back contact layer (20) on a glass substrate (10). A CIGS absorber layer (30) is formed on the back contact layer. The surface of the CIGS absorber layer is treated with a metal-based solution of cadmium hydroxide, zinc hydroxide or indium hydroxide, so that corresponding metal ions are produced during treatment and the metal ions diffuse into the surface of the CIGS absorber layer and dope the surface of the CIGS layer to form a homo-junction within the CIGS absorber layer. A buffer layer (40) is formed on the CIGS absorber layer.    USE - Method for manufacturing a CIGS thin film solar cell.    ADVANTAGE - The method enables treating the CIGS absorber layer with the metal-based alkaline solution, and forming the buffer layer on the CIGS absorber layer, so that the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer, thus improving quality of the p-n junction at the CIGS absorber layer/buffer layer interface.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an apparatus for manufacturing CIGS solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film solar cell.'(Drawing includes non-English language text)'    Glass substrate (10)    Back contact layer (20)    CIGS absorber layer (30)    Buffer layer (40)    Electrode layer (50)
NOVELTY - A nonwoven fabric comprises a continuous multiple fiber. The continuous multiple fiber contains fiber having average fiber diameter of 0.1-5 mu m and fiber diameter of 5 mu m or more. The fiber has plurality of holes having sizes of 1/10000 or more on the fiber surface. The nonwoven fabric has average apparent density of 0.05-2 g/cm3, average void diameter of 0.1-10 mu m and maximum void diameter of 50 mu m or less.    USE - Nonwoven fabric is used for liquid or gas filter, electrical storage device, adsorbent, sound absorption material, heat insulating material, cleaner, protective clothing material, wallpaper or shoji paper (all claimed), film material for battery, separator of capacitor and fuel cell.    ADVANTAGE - The nonwoven fabric is efficiently manufactured with short circuit-proof property, liquid absorption permeability, liquid maintain property, adsorptivity, sound absorbency, wipeability, thermal-insulation-property and flame resistance, and improved collection efficiency, and suppressed pressure loss and short circuit.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of nonwoven fabric, which involves discharging polymer fluid from discharge hole having narrow diameter, blewing off from outer side of discharge hole act and expanding or diameter-narrowing discharged polymer fluid, solidifying discharged polymer fluid, and collecting fiber to make nonwoven fabric.
NOVELTY - The method involves forming a precursor layer (400) on a substrate (11) when a semiconductor nanoparticle used as a raw material of a light absorption layer applies coating liquid distributed to organic solvent. A hydrogenation catalyst layer is formed on the precursor layer. Reduction removal processing is performed to reduce and remove impurity remaining in the precursor layer in hydrogen atmosphere using the hydrogenation catalyst layer as a catalyst. Oxidation removal processing is performed to oxidize and remove the impurity remaining in the precursor layer in an oxygen environment.    USE - Method for manufacturing a solar cell i.e. thin film-type solar cell.    ADVANTAGE - The reduction removal processing is performed to reduce and remove impurity such as ligand of organic substance and organic solvent, remaining in the precursor layer and the light absorption layer in hydrogen atmosphere using the hydrogenation catalyst layer as the catalyst, so that conversion efficiency of the solar cell can be improved to 2-5% and manufacturing cost of the solar cell can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows sectional views illustrating a method for manufacturing a solar cell.    Substrate (11)    Lower electrode (31)    Buffer layer (51)    Precursor layer (400)
NOVELTY - A compound semiconductor thin film has a lower layer having microparticles of (I)-(II) and (IV)-(VI) group compound, and laminated component having copper layer planarizing lower layer surface.    USE - Compound semiconductor thin film is used for solar cell (claimed).    ADVANTAGE - The compound semiconductor thin film has reduced surface roughness.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of compound semiconductor thin film; and    (2) solar cell.
NOVELTY - The laminate apparatus has a panel portion (35), in which a blood laminate body is interposed. A diaphragm is fixed in a space unit. A heater fitted unit (40) is equipped inside the panel portion. A heater unit is inserted into the heater fitted unit. A heat exchanger is provided with a communication unit (47A). A heat medium supplying unit (48) supplies thermal medium to the communication unit. The communication unit and a heater mounting unit (40A) are isolated with a sealing element (S). Another heater mounting unit (40B) is positioned in the outside of the panel portion.    USE - Laminate apparatus for laminating a solar cell module in a solar cell.    ADVANTAGE - The laminate apparatus has a panel portion, in which a blood laminate body is interposed, and thus enables facilitating the heat exchange between the heater fitted units. The panel portion is uniformly heated up. The temperature down of the panel portion outside is prevented. The temperature of the panel portion is efficiently maintained. The production efficiency is improved. The unnecessary task and time for laminating the solar cell module are reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a panel portion. (Drawing includes non-English language text).    Panel portion (35)    Heater fitted unit (40)    Heater mounting units (40A,40B)    Communication unit (47A)    Supplying heat medium unit (48)    Sealing element (S)
NOVELTY - Substituted 1,4-dihydro-pyrrolo(3,2-b)pyrrole compounds (I) are new.    USE - (I) are useful as strongly fluorescent compounds, and pigments and in two-photon excited fluorescence microscopy, bulk heterojunction solar cells and organic FET.    ADVANTAGE - (I): are prepared form one stage process using simple substrates; exhibit strong absorption of light in 280-520 nm, thus less substance can be used with the same final effect, low oxidation potential and large highest occupied molecular orbital-lowest unoccupied molecular orbital gap; and provide very high fluorescence quantum yields.    DETAILED DESCRIPTION - Substituted 1,4-dihydro-pyrrolo(3,2-b)pyrrole compounds of formula (I) are new.    R1-R3 = alkyl, aryl, arylethynylaryl or heteroaryl (all optionally substituted) or H.    Provided that 1,4-dihydro-pyrrolo(3,2-b)pyrrole is excluded. An INDEPENDENT CLAIM is also included for preparation of (I).
NOVELTY - The method involves isolating copper indium selenium-type light absorption layer (4) as a solid substance by making an aqueous solution of a monohydric strong base immersing laminated body (1), where a substrate (2) is provided in a copper indium selenium-type thin film solar cell. The isolate copper indium selenium-type light absorption layers are collected, where a monohydric strong base is made of sodium hydroxide and potassium hydroxide. The mole concentration of the monohydric strong base of the aqueous solution is a range from 2 molar to the saturated solubility.    USE - Method for collecting the valuables from a copper indium selenium-type thin film solar cell.    ADVANTAGE - The copper indium selenium-type light absorption layer is isolated as a solid substance by making an aqueous solution of a monohydric strong base immersing laminated body, and hence enables reducing the manufacturing cost of a copper indium selenium-type thin film solar cell in an effective manner and improves the photoelectric conversion efficiency of the copper indium selenium-type thin film solar cell in a reliable manner, and also recovers the copper indium selenium-type light absorption layer with high density in a simply manner, thus recovers the single-piece without providing the damage to a glass substrate and suppresses the running cost and the waste water treatment cost of a chemical.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a copper indium selenium-type thin film solar cell. (Drawing includes non-English language text).    Laminated body (1)    Substrate (2)    Back surface electrode layer (3)    Copper indium selenium-type light absorption layer (4)    Buffer layer (5)    Window layer (6)
NOVELTY - Production of fluorinated copolymer involves polymerizing fluorine-containing monomer having carboxylic-type functional group or sulfonic acid-type functional group with fluorinated olefin in polymerization medium to obtain a mixture comprising fluorinated copolymer, unreacted monomer and the polymerization medium, heating the mixture in an evaporation reactor with stirrer, stirring the resultant product to evaporate and collect the unreacted monomer and the polymerization medium, and washing obtained fluorinated copolymer with a washing medium.    USE - Production of fluorinated copolymer used for ion-exchange membrane (claimed) for fuel cell.    ADVANTAGE - The method efficiently and economically provides fluorinated copolymer with high quality. The ion-exchange membrane comprising the fluorinated copolymer has excellent heat resistance, solvent resistance and chemical resistance.
NOVELTY - A copper paste composition comprises 40-90 wt.% copper coated nanoparticles or copper coated hetero-metal nanoparticles (A) which are coated by organic compound on surface, 1-30 wt.% binder resin (B), 1-20 wt.% monomers and oligomers (C), 0.1-3 wt.% curing agent (d), and remainder of solvent (E).    USE - Copper paste composition is used for printing electronic article e.g. flexible printed circuit board (all claimed). Uses include but are not limited to lamp, radio-frequency identification tag, lamp, display, solar cell, battery and semiconductor.    ADVANTAGE - The economical copper paste composition provides printed electronic article having excellent electrical conductivity, adhesive strength with respect to substrate, and printability even at atmospheric pressure. The oxidation of copper contained in the composition is prevented using organic compound.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) electronic printing method; and    (2) electronic printing article.
NOVELTY - Manufacture of carbon material containing defect involves contacting carbon material with metal-containing compound, heating in air and introducing deformity.    USE - Manufacture of carbon material containing defect. Uses include but are not limited to fuel cell, lithium ion battery, semiconductor device, gas sensor, catalyst and medical device.    ADVANTAGE - The method efficiently and economically provides carbon material containing defect.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for carbon material containing defect.
NOVELTY - Conductive masterbatch comprises carbon nanotube and silicone gum.    USE - The conductive masterbatch is useful in the manufacture of a conductive film (claimed) that is useful in a plasma-display panel, a LCD, a LED, an organic electroluminescent device, a touch panel and a solar cell.    ADVANTAGE - The eco-friendly conductive masterbatch can be inexpensively prepared with high productivity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) preparing conductive masterbatch comprising mixing carbon nanotube and silicone gum and then pelletizing the mixture using an extruder; and    (2) manufacturing a conductive film comprising preparing the master batch, preparing a synthetic resin film comprising a base material, and mixing the master batch with the synthetic resin film and then molding.
NOVELTY - Sulfur and solvent (A) are mixed and irradiated with ultrasonic wave, to obtain mixed solution (a). Organic tin compound and solvent (B) are mixed and irradiated with ultrasonic waves, to obtain mixed solution (B). Solvent (C) is added to mixed solution (a) and mixed at 90-130 degrees C. Mixed solution (b) is added to reaction mixture, heated to 270-310 degrees C and then cooled to room temperature, to obtain tin sulfide nanorod.    USE - Manufacture of tin sulfide nanorods used for photoelectron device, solar cell and holographic optical element material.    ADVANTAGE - The method enables manufacture of tin sulfide nanorods with tapered shape, by simple process in a short period of time.
NOVELTY - The substrate (100) has aluminum-arsenic-antimony (AlAsSb) layer (20) that is formed on the silicon substrate (10). An aluminum-arsenic (AlAs) layer (30) is formed on the AlAsSb layer. A gallium-arsenic (GaAs) layer (40) is formed on the AlAs layer. The AlAsSb layer is formed on the Si substrate by removing the oxide film on the Si substrate.    USE - Compound semiconductor substrate for use during manufacture of solar cell.    ADVANTAGE - High quality solar cell can be effectively manufactured, since the aluminum-arsenic-antimony layer is formed on silicon substrate by removing oxide film on silicon substrate.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing compound semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows the block diagram of the compound semiconductor substrate.    Silicon substrate (10)    AlAsSb layer (20)    AlAs layer (30)    GaAs layer (40)    Compound semiconductor substrate (100)
NOVELTY - Producing alpha -alane involves preparing a tetraalkyl ammonium alanate solution in toluene; heating the solution while adding an alkyl halide to produce crystals for nucleation; after producing the crystals for nucleation, slowly adding alkyl halide to produce alane, toluene, and tetraalkyi ammonium chloride; continuing to heat the solution so that the alane that is formed is in the alpha -crystalline phase; and removing the alpha -alane crystals by filtration, leaving tetraalkyl ammonium halide in toluene solution as the filtrate.    USE - For producing alpha -alane (claimed) used in fuel cell.    ADVANTAGE - The method recycles the quaternary salts and solvents; is more economical and yields alane with superior properties compared with routes based on the reaction of metal aluminum hydride with aluminum chloride; produces alpha -alane that is capable of efficiently and controllably producing hydrogen for a sustained period of time.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for producing alpha -alane involving preparing a tetraalkyl ammonium alanate solution in toluene; adding sufficient tetrahydrofuran to produce alane, toluene, and a tetraalkyl ammonium compund; and removing the alpha -alane crystals by filtration, leaving tetraalkyl ammonium halide in toluene solution as the filtrate.
NOVELTY - Manufacturing support coated with mixed composite conductive layers, comprises forming a support (10), forming compact film of mixed composite conductive layers (20) on one or both surfaces of the support by coating paste or slurry comprising conductive composite powder mixture and sintering the support coated with mixed composite conductive layers.    USE - The support coated with mixed composite conductive layers is useful in anode, cathode, separator and membrane for fuel cells, electrolytic cell and electrochemical device (all claimed).    ADVANTAGE - The mixed composite conductive layers provide high electrical conductivity to the support; prolong the service life of support; does not cause corrosion of devices; improve the performance of electrochemical devices; can efficiently remove hydrogen or oxygen and maintain stable voltage under small electric resistance to stabilize the operation of fuel cell, electrolytic cell and electrochemical device.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for support coated with mixed composite conductive layers, comprising Support including support powder component and compact film of mixed composite conductive layers on one or both surfaces of the support by coating paste or slurry comprising conductive composite powder mixture.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of support coated with mixed composite conductive layers.    Support (10)    Mixed composite conductive layer (20)    Functional layer (30)    Catalyst layer (40)
NOVELTY - Substituted 9,10-dihydrophenanthrene compounds (I) are new.    USE - (I) is useful in an organic electroluminescent device (claimed) such as organic LED, organic photoelectric device, organic solar cell, organic photo conductor drum and organic transistor.    ADVANTAGE - (I) has excellent thermal stability, electrochemical stability and driving durability so as to improve efficiency of the organic electroluminescent device.    DETAILED DESCRIPTION - Substituted 9,10-dihydrophenanthrene compounds of formula (I) are new.    Ar1 = 1-6c-aryl; and    R1-R3 = 1-6C-alkylsilyl, 1-60C-alkyl, 6-60C-arylsilyl, dicycloalkyl, alkenyl, alkynyl, alkoxy, alkyl amino, arylamino, 1-60C-aryloxy, thioaryl, thioalkyl, alkoxycarbonyl, alkylcarbonyl or 6-60C-arylcarbonyl (all optionally substituted), heterocycloalkyl, H, halo, nitro, OH, CN, N, O, S, Si, or five-membered or six-membered cycloalkyl, where R1-R3 forms a fused ring.    An INDEPENDENT CLAIM is included for an organic electroluminescent device comprising an organic layer containing (I), where the organic layer is formed between a first substrate and a second substrate.
NOVELTY - A norbornene-based styrene derivative (I) is new.    USE - New norbornene-based styrene derivative is used for manufacture of hole transport polymer for electric component e.g. solar cell and organic light-emitting diode (all claimed).    DETAILED DESCRIPTION - A norbornene-based styrene derivative of formula (I) is new.n=1-15.    INDEPENDENT CLAIMS are included for the following:    (1) manufacture of norbornene-based styrene derivative;    (2) hole transport polymer, which has repeating unit of formula (II);    (3) manufacture of hole transport polymer, which involves adding organometallic catalyst(s) chosen from aromatic compound of formulae: L1-MaXaXbXc, L1-Ma(-L2)-XaXb or MaXaXb or aromatic compound of formula (V) in monomer mixture of norbornene-based styrene derivative and polymerizing; and    (4) electric component, which has hole-transport layer manufactured using the hole transport polymer.    Ma=group 3-10 transition metal element;    L1,L2= phi - ligand of cyclopentadienyl derivative, or sigma -ligand of phosphine, amine, imine, amide, oxide or heterocycloalkyl carbine;    Y'=1-20C alkyl, trialkylsilyl, cycloalkyl, cycloalkylsilyl, 6-40C aryl, alkylaryl, arylalkyl, arylsilyl, arylalkyl silyl, cycloalkyl, aryl or cycloalkylaryl silyl;    Xa-Xc=H, halo, hydroxy, 1-20C alkyl, alkylallyl, alkoxy, thioalkoxy, amide, carboxy, acetylacetonato, sulfonyl, 6-40C aryl, alkylaryl, allylaryl, arylalkyl, haloaryl, aryloxy, arylalkyl, thioaryloxy, arylamide, arylalkyl amide or aryloxy arylamino.
NOVELTY - A solar cell wafer phosphorus diffusion uniformity improvement method involves varying nitrogen flow rate and pressure to improve the diffusion uniformity of the solar cell wafer, where the wafer has resistivity of 1-3 ohm.cm.    USE - Method for improving phosphorus diffusion uniformity of a solar cell wafer.    ADVANTAGE - The method enables effectively controlling the atmosphere inside the furnace tube and the status field of the dopant gas flow rate, so as to achieve diffusion process stability and repeatability, and making the whole tube monolithic uniformity.
NOVELTY - The method involves depositing (S1) gallium copper on the upper portion of the substrate through the sputtering process to form the selenideindium on the substrate. The gallium copper and the selenideindium are deposited (S2) on the upper portion of the substrate through the sputtering process to form the selenization copper on the substrate. The substrate is made of molybdenum material. Selenium or sulfur is supplied to the upper side of substrate.    USE - Method for fabricating light absorption layer (claimed) of solar cell.    ADVANTAGE - Since the gallium copper and selenideindium are deposited on the upper portion of the substrate through the sputtering process to form the selenization copper on the substrate, the loss of indium in the crystallization stage can be prevented. The separation of gallium due to the selenideindium can be prevented. The volume expansion due to additional inflow of selenium can be prevented in the crystallization stage. The stress applied to the thin film can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a light absorption layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for fabricating light absorption layer of solar cell.(Drawing includes non-English language text)    Step for depositing gallium copper on upper portion of substrate (S1)    Step for depositing gallium copper and selenideindium on upper portion of substrate (S2)    Step for performing crystallization (S3)
NOVELTY - A direct formic acid fuel cell carbon-supported palladium or palladium-platinum catalyst is prepared by adding precursor aqueous solution with carbon carrier to obtain suspension liquid, then adding inorganic salt and reducing agent into the liquid, putting in oil bath at 90-100 degrees C and refluxing for 6-10 hours, where the precursor solution is palladium(II) chloride (PdCl2) aqueous solution or mixed solution of PdCl2 aqueous solution and chloroplatinic acid hexahydrate aqueous solution; cooling and filtering reaction liquid; and drying and grinding filter cake.    USE - Method of preparing a direct formic acid fuel cell carbon-supported palladium or palladium-platinum catalyst (claimed).    ADVANTAGE - The method has simple operation with no post-processing step and can obtain catalyst having particle diameter of 2.5-3 nm.    DETAILED DESCRIPTION - Preparation of a direct formic acid fuel cell carbon-supported palladium or palladium-platinum catalyst comprises:    (A) adding precursor aqueous solution with carbon carrier, ultrasonically stirring to obtain suspension liquid, then adding inorganic salt and reducing agent into the liquid, adjusting pH value to 9-10, then putting in oil bath at 90-100 degrees C and refluxing for 6-10 hours, where the precursor solution is palladium(II) chloride (PdCl2) aqueous solution or mixed solution of PdCl2 aqueous solution and chloroplatinic acid hexahydrate aqueous solution;    (B) cooling and filtering reaction liquid; and    (C) washing filter cake with deionized water, vacuum drying, and grinding.
NOVELTY - A platinum-iron/carbon catalyst is prepared by dissolving ferric nitrate or ferric chloride in deionized water, heating to 40-60 degrees C, adding ammonia water to pH value of not greater than 3, cooling, adding platinum/carbon catalyst, stirring for 1-3 hours, evaporating at 40-60 degrees C, firing at not less than 700 degrees C in hydrogen-argon atmosphere, cooling, treating in acid at 100 degrees C for 12-36 hours, filtering, washing, and treating at 80-100 degrees C for 8-16 hours in inert atmosphere.    USE - Method for preparing platinum-iron/carbon catalyst for proton exchange membrane fuel cell, i.e. hydrogen, methanol or ethanol fuel cells (claimed).
NOVELTY - A nitrogen-doped carbon nanotube comprises inner conductive layer and porous carbon outer layer.    USE - Nitrogen-doped carbon nanotube used as fuel cell cathode (claimed).    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation of nitrogen-doped carbon nanotube comprising dispersing carbon nanotube in water, adding carbon source, performing hydrothermal reaction at 120-190 degrees C for 6-20 hours, and performing high-temperature treatment at 600-1000 degrees C with nitrogen source.
NOVELTY - A diethylaminocoumarin compound is new.    USE - A diethylaminocoumarin compound for dye sensitizer and preparation of solar battery (all claimed).    ADVANTAGE - Preparation process is simple, and solar battery has better efficiency.    DETAILED DESCRIPTION - A diethylaminocoumarin compound of formula (I) or formula (II) is new.    Ar=6-18C aryl.    An INDEPENDENT CLAIM is included for preparation of diethylaminocoumarin compound of formula (I) or formula (II).    DESCRIPTION OF DRAWING(S) - The drawing shows a curve of diethylaminocoumarin assembly electric current.
NOVELTY - Flexible copper indium gallium selenide (CIGS) solar battery preparation device comprises vacuum room provided with a working table having outer side provided with flexible CIGS solar battery substrate for pushing holding mechanism of working table, upper part provided with heater, upper side provided with two target substrates and sputtering source corresponding to two target substrates, where absorption layer and buffer layer are deposited by working table.    USE - Flexible CIGS solar battery preparation device.    ADVANTAGE - The device avoids the influence of gravity so that deposition non-uniformity is avoided.
NOVELTY - This utility new type claims a one solar battery capable of reducing production cost of using silicon sheet diffusion furnace. The diffusion furnace include furnace door of furnace body, the inside of the furnace body is set with set with boat, silicon sheet is placed in the quartz boat up, upper furnace body is set with air inlet tube and discharge tube, said upper discharge tube connecting with an exhaust fan, said upper furnace body is provided with a switch device, said switch device comprise suspension support, upper suspension support frame is suspended with a movable bracket and first driving device, further comprise rotating pole, a push-pull pole and used for pushing the push-pull rod moving of second driving device. Because the structure uses the structure of force-saving lever, therefore, the time in the furnace door, the force of small, second driving device of bearing load is small, therefore, second driving device is not easy to be damaged, it can not need frequently change, reduces the purchase second driving device of the cost, it can greatly reduce the production cost. Is suitable for the solar battery silicon slice processing device field;
NOVELTY - This utility new type claims a one solar battery capable of reducing production cost of using silicon sheet diffusion furnace. The solar battery using silicon sheet diffusion furnace, comprise furnace door of furnace body, the inside of the furnace body is set with set with boat, silicon sheet is placed in the quartz boat up, upper furnace body is set with air inlet tube and discharge tube, said upper discharge tube connecting with an exhaust fan, said upper furnace body is provided with a switch device, said switch device comprise base, upper base is provided with a movable bracket and first driving device, further comprise rotating pole, a push-pull pole and used for pushing the push-pull rod moving of second driving device. Because the structure uses the structure of force-saving lever, therefore, the time in the furnace door, the force of small, second driving device of bearing load is small, therefore, second driving device is not easy to be damaged, it can not need frequently change, reduces the purchase second driving device of the cost, it can greatly reduce the production cost. Is suitable for the solar battery silicon slice processing device field;
NOVELTY - This utility new type claims a diffusion exhaust one good stability of solar battery silicon sheet using the diffusion furnace. The solar battery using silicon sheet diffusion furnace, comprise furnace door of the furnace body is provided with the furnace body set with boat, silicon sheet is placed in the quartz boat up, furnace body is set with upper air inlet tube and discharge tube, said discharge tube upper connecting with an exhaust fan, the exhaust fan comprise a fan main body, the fan main body upper connecting with a control switch, said control switch and the fan main body is provided with a frequency converter. Time when the external environment change, through frequency of the frequency converter so as to make the fan rotating speed change occurs before the pneuma ability of the fan to the outside environment change, so as to maintain a valid control for diffusion of air exhaust property of the diffusion furnace stable so as to avoid diffusion of gas in a diffusion furnace is not distribute on the upper silicon sheet are caused by the silicon sheet surface of square block resistance uniformity is bad of. Is suitable for the solar battery silicon slice processing device field;
NOVELTY - A large gamma -copper iodide crystal has size of not greater than 1 cm.    USE - A large gamma -copper iodide crystal for ultra-fast scintillation crystal, ultra-high count rate electronics, X-ray and gamma -ray measurements, solar cell materials, and photocatalytic materials.    ADVANTAGE - Product has low growth temperature, low solution viscosity, simple device, directly observable growth process, high purity, good uniformity, and excellent optical quality.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for growing of large copper iodide crystal which involves using cryogenic cooling solution, using a solvent system which contains ammonium chloride (NH4Cl), ammonium bromide (NH4Br), and ammonium iodide (NH4I), and using copper as reducing agent in which growth temperature area is 30-60 degrees C and cooling rate is 0.1-0.5 degrees C/day.    DESCRIPTION OF DRAWING(S) - The drawing shows a picture of a large gamma-copper iodide crystal.
NOVELTY - The method involves connecting a diffusion and etching processing unit with a polycrystalline silicon chip that is formed with a side part of an etching structure. A polycrystalline silicon wafer is mixed with passivation liquid. A polycrystalline silicon chip surface is filled with the passivation liquid. A silicon nitride thin film is formed with the silicon chip surface and a plasma enhanced chemical vapor deposition (PECVD) layer, where the passivation liquid is a hydrofluoric acid solution. A multi-crystal sheet is formed with a uniformity passivation liquid layer.    USE - Poly-crystalline silicon solar battery passivation layer processing method.    ADVANTAGE - The method enables providing simple and easy operation and prolonged service life, and improving stability and processing efficiency of a subsequent module.
NOVELTY - The antireflection film has a main portion whose bottom section is provided with a silicon dioxide layer (1). The refractive index of the silicon dioxide layer is 1.45-1.58. A middle section of main portion is provided with a high refractive index passivation silicon nitride layer (2). The refractive index of passivation silicon nitride layer is 2.00-2.40. A top section of main portion is provided with a silicon nitride layer (3) with optimized electric property. The refractive index of the silicon nitride layer with optimized electric property is 1.90-2.25.    USE - Antireflection film used for potential induced degradation (PID)-free polycrystalline silicon solar battery.    ADVANTAGE - The electrical property and the conversion efficiency of the PID-free polycrystalline silicon solar battery can be improved by using the antireflection film.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the antireflection film.    Silicon dioxide layer (1)    Passivation silicon nitride layer (2)    Silicon nitride layer with optimized electric property (3)
NOVELTY - The method involves pre-processing a silicon sheet that is extended out of an outlet boat according to low temperature and high temperature diffusion conditions. A low temperature diffusion rate is about 700 to 800 degree Celsius. Diffusion process is performed by phosphorus source gas, oxygen and nitrogen, where diffusion time is about 6 to 8 min. A flow rate of the phosphorus source gas and the nitrogen are about 600 to 800 sccm and 7 to 8 slm, respectively. The silicon sheet is put in a diffusion furnace to perform heating process.    USE - Solar battery fills diffusion bonding method.
NOVELTY - The method involves performing acid washing of a defective chip. Deionized water is used to wash a stirrer. Silicon sheet diffusion bonding process is performed to remove phosphorus silicon glass. The phosphorus silicon glass is plated with a reflecting film.    USE - Defective solar battery silicon chip wet etching method.
NOVELTY - The method involves cleaning polycrystalline silicon wafer rear pile in a diffusion furnace. Polycrystalline silicon slice process is performed. The diffusion furnace is filled with nitrogen of phosphorus oxychloride. The diffusion furnace is filled with oxygen and nitrogen. Cooling process is performed, where temperature of the diffusion furnace is raised to 800 to 820 degrees Celsius and flow rate of oxygen is 1.6 to 2.2 liter/minute.    USE - Low-temperature polycrystalline silicon solar battery temperature diffusing method.    ADVANTAGE - The method enables reducing minority carrier composite so as to improve high energy photon and improving multi-crystal silicon solar battery efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a low-temperature polycrystalline silicon solar battery temperature diffusing method.'(Drawing includes non-English language text)'
NOVELTY - The method involves coating a surface of a tin indium oxide conductive glass with thiophene radical material. Electric polymerization provide activity potential value is calculated. 3-hexyl thiophene using electrochemical polymerization process is performed. Activity layer donor material preparation process is performed. Composite multilayer is coated with activity layer material. Nitrogen drying process is performed to obtain a mercapto biphenyl three thiophene / Gold (Au)/indium tin oxide (ITO) semi-electrode. A supporting electrolyte is coated with lithium chlorine tetra oxygen (LiClO4).    USE - Solar battery composite multilayer activity layer material preparation method.    ADVANTAGE - The method enables utilizing a donor receptor activity layer material layer interface forming structure and determining consistency of donor and receptor.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a solar battery composite multilayer activity layer material.'(Drawing includes non-English language text)'
NOVELTY - Preparing niobium rotating target comprises adding niobium powder and tantalum powder, then uniformly mixing, sintering the mixture using a furnace, adding the above treated niobium powder into a mold, adding sulfide powder into the mold to coat the surface of the niobium powder, sintering the coated niobium powder using a hot pressing sintering furnace under vacuum environment, carrying out demolding process for the heated niobium powder, and then cooling at normal temperature to obtain rotating target product, machinery processing the obtained product, and then cleaning and checking.    USE - The niobium rotating target is useful for solar battery, liquid crystal display, plasma displays, touch screen mobile phone, optical glass and gas sensor.    ADVANTAGE - The method is capable of preparing the niobium rotating target with high compactness and yield, good conductivity, density of less than 4.59 g/cm3, resistivity of less than 9x 10-3 Omega .cm, less energy and time consumption, in simple and economical manner.    DETAILED DESCRIPTION - Preparing niobium rotating target comprises adding niobium powder and tantalum powder with a ratio of 20:1-50, then uniformly mixing, sintering the mixture using a furnace at 350-550 degrees C for 1-3 hours under normal pressure, adding the above treated niobium powder into a mold, adding sulfide powder into the mold to coat the surface of the niobium powder, sintering the coated niobium powder using a hot pressing sintering furnace at 10-1300 degrees C, for 1-5 hours under pressure of 15-30 MPa and vacuum environment, carrying out de-molding process for the heated niobium powder at 400-1100 degrees C, and then cooling at normal temperature to obtain rotating target product, machinery processing the obtained product, and then cleaning and checking.
NOVELTY - The battery has a smooth seed layer slurry containing 70-85 wt.percent metal powder, 2-10 wt.percent inorganic function glass powder and 5-20 wt.percent organic carrier, where the metal powder contains spherical nanometer antimony powder. Diameter of particles in the metal powder is 3 to 8m2/g. Spherical metal bismuth powder is added to the smooth seed layer slurry.    USE - SE crystalline silicon solar battery.    ADVANTAGE - The battery has high welding intensity, small contact resistance of an electrode and better average photoelectric convert efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a SE crystalline silicon solar battery preparing method.
NOVELTY - A benzothiadiazole-containing compound (I), is new.    USE - A benzothiadiazole-containing compound (I) used as an active layer of a solar cell device, a light emitting layer of organic electroluminescent device (claimed), and organic field effect transistor.    ADVANTAGE - The benzothiadiazole-containing copolymer (I) has high energy conversion efficiency.    DETAILED DESCRIPTION - A benzothiadiazole-containing compound of formula (I), is new.    R1, R2=1-25C alkyl;    R3, R4=H, 1-20C alkyl; and    n=10-100.    An INDEPENDENT CLAIM is included for preparing (I).
NOVELTY - A resin base material (1) is conveyed and contacted with each of pair of film-forming roller. A film-forming gas is supplied between rollers, and a gas barrier layer (3) is formed on the resin base material by plasma chemical vapor deposition method after performing plasma discharge. The resin base material has a stress absorption layer (2) having pushing hardness of 0.4-1 GPa with respect to load of 100 mu N, at both surfaces, and gas barrier layer is formed on at least one stress absorption layer. Thus, gas barrier film (1a) is manufactured.    USE - Manufacture of gas barrier film for electronic device e.g. organic electroluminescent element, liquid crystal display and solar cell element.    ADVANTAGE - The gas barrier film having excellent gas barrier property even at high temperature and humidity conditions, and flexibility is manufactured. The generation of microdefects during formation of gas barrier film is prevented.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for gas barrier film.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of gas barrier film.    Resin base material (1)    Gas barrier films (1a,1b)    Stress absorption layer (2)    Gas barrier layer (3)    Overcoat layer (5)
NOVELTY - A redox flow battery consists of volume (I) of positive electrolyte, volume (II) of negative electrolyte, porous separator between volumes (I, II) and pressure controller configured to regulate pressures, and applied to the positive and negative electrolytes on respective sides of the porous separator during battery operation. The volumes (I, II) of the positive and negative electrolyte are adjusted by flowing positive or negative electrolyte across the porous separator to maintain a target ratio between the volumes (I, II).    USE - Redox flow battery used for large-scale energy storage and integral components in electrical power infrastructure.    ADVANTAGE - The redox flow battery has excellent battery performance, durability, workability, improves regulation of volume of electrolytes and requires low cycle costs, and is economical.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for composite separator having porous structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of redox flow battery cell utilizing pressure and/or volume regulation.    Single flow cell (500)    Porous separator (501)    Inlets (504, 505)    Peristaltic pumps (506, 507)    Outlets (508, 509)    Gas source of vacuum (510)
NOVELTY - A composition comprises boron trifluoride complex salt (A) and ionic liquid-containing fluorine atom (B).    USE - Composition is used as etching paste for removal of silicon nitride film (claimed) used as interlayer insulation film, passivation film and anti-reflective film for manufacture of semiconductor element e.g. complementary metal-oxide semiconductor and solar cell.    ADVANTAGE - The silicon nitride film is efficiently removed by the composition, under low temperature.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for removal of silicon nitride film, which involves using the composition.
NOVELTY - Preparing an amorphous silicon oxide coated carbon-based composite comprises: coating a silane polymer on a surface of a carbon material and then drying to obtain the silane polymer coated carbon composite; and mixing the silane polymer coated carbon composite with a solvent, stirring and heat-treating the carbon composite.    USE - The method is useful for preparing an amorphous silicon oxide coated carbon-based composite that is useful in a fuel cell (all claimed).    ADVANTAGE - The carbon composite improves an electrochemical anti-corrosion property and endurance of the fuel cell.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) an amorphous silicon oxide coated carbon composite; and    (2) an electrocatalyst for a fuel cell that comprises a support element made of amorphous silicon oxide coated carbon material, where the electrocatalyst is coated on the support element.
NOVELTY - Preparing a hydrogel absorber comprises: mixing two acrylate compounds (I) or (II) to prepare a dispersed phase solution; injecting a continuous phase solution and a dispersed phase solution into a cylinder through a tube to form a droplet; and subjecting the droplets to UV irradiation to prepare the hydrogel absorber.    USE - The method is useful for preparing a hydrogel absorber (claimed) that is used to collect metal ion i.e. lithium ion used as a nuclear fusion energy source in a secondary battery, a hybrid car, a high capacity battery, an aircraft, a cellular phone, a notebook, a solar cell and a medical device.    ADVANTAGE - The hydrogel absorber can collect the metal ion i.e. lithium ion, from the seawater and the effluent in an efficient manner, and is recycled in a simple manner.    DETAILED DESCRIPTION - Preparing a hydrogel absorber comprises: mixing two acrylate compounds of formula (I) or (II) to prepare a dispersed phase solution; injecting a continuous phase solution and a dispersed phase solution into a cylinder through a tube to form a droplet; and subjecting the droplets to UV irradiation to prepare the hydrogel absorber.    X = O or NH;    n = 1-5;    R1, R2 = 1-6C-alkyl optionally substituted with NR3R4; and    R3, R4 = H or 1-6C alkyl.
NOVELTY - An organic thin-film solar cell element comprises furan-containing compound (I) and furan-containing compound (II).    USE - Organic thin-film solar cell element is used for ink composition (claimed), and used as power supply of display board and marker lamp.    ADVANTAGE - The organic thin-film solar cell element has excellent photoelectric conversion efficiency and durability.    DETAILED DESCRIPTION - An organic thin-film solar cell element comprises furan-containing compound of formula (I) and furan-containing compound of formula (II).    R1,R2,R6,R7 =optionally substituted aliphatic hydrocarbyl, optionally substituted alkoxy carbonyl or a substituted or optionally substituted aryl oxycarbonyl;    R3-R5,R8-R10=H, halo or group of formula (III) or (IV);    X=-O-, -NR19-, or -S-;    R19=H, optionally substituted aliphatic hydrocarbyl, and optionally substituted aryl;    R11-R13=H, halo, optionally substituted aliphatic hydrocarbyl, optionally substituted aryl, optionally substituted aliphatic heterocyclyl, optionally substituted hetero aryl, substituted silyl group, cyano group, optionally substituted alkoxyl, optionally substituted aryloxy, or substituted amino;    R14-R18=H, halo, optionally-substituted aliphatic hydrocarbyl, optionally substituted aryl, optionally substituted aliphatic heterocyclyl, optionally substituted hetero aryl, substituted silyl group, cyano group, optionally substituted alkoxyl, optionally substituted aryloxy group, or substituted amino;and    R14-R18=ring.    An INDEPENDENT CLAIM is included for ink composition, which contains organic thin-film solar cell element material and organic solvent.
NOVELTY - An organic thin-film solar cell material comprises a dibenzo-pyrromethene boron chelate compound (I).    USE - Organic thin-film solar cell material is used for organic thin-film solar cell used for apparatus (all claimed). Uses include but are not limited to timepiece, mobile telephone, mobile personal computer, and electrical appliance.    ADVANTAGE - The organic thin-film solar cell material provides the organic thin-film solar cell with high open end voltage.    DETAILED DESCRIPTION - An organic thin-film solar cell material comprises a dibenzo-pyrromethene boron chelate compound of formula (I).    X1-X17=H, fluoro, chloro, bromo, or iodo.    INDEPENDENT CLAIMS are included for the following:    (1) organic thin-film solar cell, which consists of an active layer containing the organic thin-film solar cell material; and    (2) apparatus, which consists of the organic thin-film solar cell.
NOVELTY - Coated porous separator comprises first organic binder, second organic binder and third organic binder dispersed on a porous base material, where the first organic binder includes water-insoluble polymer compound and inorganic particles dispersed in water emulsion or suspension, the second organic binder includes ion conductive polymer compound, and the third organic binder includes a polymer compound comprising coating solution.    USE - The coated porous separator is useful in an electrochemical device i.e. secondary battery (all claimed) including lithium ion battery, a fuel cell, a solar cell and a super capacitor.    ADVANTAGE - The coated porous separator can improve the capacity of the battery in an inexpensive manner.
NOVELTY - This utility new type belongs to photovoltaic solar device field, a silicon bearing mechanism is one of a production of silicon single crystal furnace crystal growth of silicon single crystal furnace. It include, connecting piece and a graphite locating device, the steel body is set with one telescopic mechanism, connecting piece is set on the telescopic mechanism, the graphite locating device fixed on the connecting piece. This utility new type has the advantages of telescopic mechanism through the graphite locating device can be extended or retracted so as to change the weighing mechanism to meet the need of the length in the secondary crystal silicon growing furnace, improves the working efficiency and reduces the production cost.
NOVELTY - Visible light catalyst preparation involves adding surface activity agent into volatile organic solvent, and stirring the mixture to fully dissolve at room temperature to obtain solution A. Cadmium nitrate tetrahydrate and C60 solution are added to the solution A. Titanium source is added to the solution A. The solution A is stirred for 0.5 hours. The solution A is transferred into a culture dish for drying at 40 degrees C for four days to obtain sample.    USE - Method for preparing visible light catalyst (claimed) used for carrying out photolysis of water into hydrogen in solar cells.    ADVANTAGE - The method enables preparing visible light catalyst in an eco-friendly manner.    DETAILED DESCRIPTION - Visible light catalyst preparation involves adding surface activity agent into volatile organic solvent, and stirring the mixture to fully dissolve at room temperature to obtain solution A. Cadmium nitrate tetrahydrate and C60 solution are added to the solution A. Titanium source is added to the solution A. The solution A is stirred for 0.5 hours. The solution A is transferred into a culture dish for drying at 40 degrees C for four days to obtain sample. The sample is added to the sodium sulfide solution. The material is stirred at room temperature. The material is centrifuged, washed and dried to obtain needed catalyst.
NOVELTY - The flexible solar battery has electrode structure that is made of insulating material and electrically conductive material. The insulating material is set on both sides of X and Y plane pattern of electrically conductive material. The conductive material is strip-shaped or round-shaped.    USE - Flexible solar battery e.g. copper-indium-gallium selenium compound thin film battery, amorphous silicon thin film battery, amorphous/microcrystalline silicon thin film battery, cadmium telluride thin film battery and organic fuel battery (all claimed).    ADVANTAGE - Since flexible battery units are connected in series, internal power loss of battery is reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a flexible solar battery manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the flexible solar battery.    Flexible battery unit (204)
NOVELTY - The film has a blunt temper-able anti-reflection film bottom layer formed with a silicon dioxide layer (1), where thickness of the silicon dioxide layer is 2-30nm. A blunt temper-able anti-reflection film middle layer is formed with a high refractive index passivation silicon nitride layer (2), where the thickness of the high refractive index passivation layer is 2-30nm. A blunt temper-able anti-reflection film top layer is formed with an electric property optimizing silicon nitride layer (3), where thickness of the electric property optimizing layer is 4-50nm.    USE - High efficient potential induced degradation (PID) free single crystal silicon solar battery blunt temper-able anti-reflection film.    ADVANTAGE - The film optimizes electric property of a single crystal silicon battery, effectively reduces influence of PID and improves conversion efficiency with better economic benefit.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a high efficient PID free single crystal silicon solar battery blunt temper-able anti-reflection film.    Silicon dioxide layer (1)    High refractive index passivation silicon nitride layer (2)    Electric property optimizing silicon nitride layer (3)
NOVELTY - The method involves washing of N type crystal silicon substrate using de-ionized water through etching treatment. The substrate is dipped in the mixed solution of concentrated sulfuric acid and hydrogen peroxide. The substrate is soaked in hydrogen chloride and hydrofluoric acid in mixed solution to 2-3 min, and washed using de-ionized water to wash. The substrate etching treatment is dried, and using de-ionized water to wash substrate. The substrate is transferred to circulating hot water with water bath temperature 80-100 degrees C in 2 to 3 hours.    USE - Cleaning processing method of N-type crystalline silicon substrate of solar battery.    ADVANTAGE - The cleanliness of the surface of the substrate to make the smooth can be improved, so as to improve the open-circuit voltage of the solar battery preparation. The battery photoelectric convert property can be improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the cleaning processing method of N-type crystalline silicon substrate of solar battery. (Drawing includes non-English language text)
NOVELTY - The structure has a FTO conductive glass layer arranged with an n-type silicon thin film. A hybrid CH3NH3PbI3 layer is fixed with a P-type silicon film. The n-type silicon thin film is selected from titanium or zinc oxide layer. Thickness of the n-type silicon thin film is about 5-15nm. Thickness of the CH3NH3PbI3 layer is about 300-500nm. Thickness of the P-type silicon thin film is about 5-15nm.    USE - Solar battery perovskite structure.    ADVANTAGE - The structure has low cost, and is easy to realize large area production, and improves stability of a battery.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a solar battery perovskite structure manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a photographic illustration of a solar battery perovskite structure.
NOVELTY - The battery has a laminated transparent glass substrate (1) provided with a transparent conductive oxide layer (2), two P-type semiconductor layers (3, 7), two amorphous silicon light absorption layers (4, 8), two N-type semiconductor layers (5, 9) and a metal electrode (10). One of the N-type semiconductor layers and one of the P-type semiconductor layers are provided with a tunnel junction part (6). Thickness of one of the amorphous silicon light absorption layers is 200-600 nm.    USE - Laminated amorphous silicon solar energy battery.    ADVANTAGE - The battery has high working efficiency and wide application range.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a laminated amorphous silicon solar energy battery in partial section.    Laminated transparent glass substrate (1)    Transparent conductive oxide layer (2)    P-type semiconductor layers (3, 7)    Silicon light absorption layers (4, 8)    N-type semiconductor layers (5, 9)    Tunnel junction part (6)    Metal electrode (10)
NOVELTY - The method involves forming a three-dimensional (3D) surface in a textured crystalline silicon substrate. An upper surface self-assembly of a molecular single layer is provided with a dopant agent. The dopant agnet is coated in the crystalline silicon substrate. A hot annealing process i.e. peak annealing process, is performed in the crystalline silicon substrate. The dopant agent is made of boron or phosphorus material.    USE - 3D ultra-shallow junction crystalline silicon substrate manufacturing method.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a photoelectric solar battery    (2) a 3D ultra-shallow junction crystalline silicon substrate manufacturing system.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a 3D ultra-shallow junction crystalline silicon substrate manufacturing method.
NOVELTY - The method involves selecting a material of a silicon substrate (1). A polishing process is performed on a front surface of the silicon substrate. A depositing medium film (2) is formed on the silicon substrate. The silicon substrate is provided with a P-type opening area and an N-type opening area. A double-side phosphorus diffusion mask is determined. A back contact is formed on two surfaces of the silicon substrate. The depositing medium film and a glass are removed. A contact area of the depositing medium film is printed by corrosive slurry.    USE - Back-junction back-contact crystalline silicon solar battery manufacturing method.    ADVANTAGE - The method enables reducing a light shading area and improving solar battery utilization range.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a back-junction back-contact crystalline silicon solar battery in sectional manner.    Silicon substrate (1)    Depositing medium film (2)
NOVELTY - The method involves forming a silicon nano-wire on an upper surface of a single crystal P-type silicon substrate by performing a wet etching process, where resistivity of the single crystal P-type silicon substrate is 0.5-1.5 Qcm, thickness of the single crystal P-type silicon substrate is 180 microns, diameter of the silicon nano-wire is 100-200nm and length of the silicon nano-wire is 3-1O um. The silicon nano-wire is fixed to an upper surface of a copper foil by utilizing a copper conductive tape. An amorphous silicon passivation layer is prepared by using PECVD technique.    USE - Method for preparing a flexible substrate of a silicon nano-wire heterojunction solar battery.    ADVANTAGE - The method enables improving light absorption characteristics of the silicon nano-wire. The method enables directly using an array of the silicon nano-wires for manufacturing the single crystal P-type silicon substrate while manufacturing a battery, so that the array of the silicon nano-wires are covered evenly on the single crystal P-type silicon substrate, thus improving repeated usage of the single crystal P-type silicon substrate, reducing silicon material consumption and saving material cost.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a silicon nano-wire heterojunction solar battery flexible substrate preparation method.'(Drawing includes non-English language text)'
NOVELTY - The method involves composing raw material of a bipolar plate, cathode plate and an anode plate. A silk screen is fixed with a starting screen printer. A surface of the cathode plate and the anode plate are fixed in an upper screen plate. A pressing device is connected with the cathode plate. The anode plate is connected with fluid inlet and outlet. The anode plate is formed with a seal groove that is located on the cathode plate. Seal glue is formed as KD504 double-component epoxy glue. Thickness of the seal glue is about 0.1-0.4 mm.    USE - Bi-polar plate proton exchange membrane fuel battery sealing method.    ADVANTAGE - The method enables realizing simple and convenient usage and improving fuel battery stability.
NOVELTY - A naphthalene-containing benzo-thiadiazole units bithiophene copolymer (I) is new.    USE - Naphthalene-containing benzo-thiadiazole units bithiophene copolymer used in organic solar battery, organic electroluminescent device, and organic field effect transistor (claimed).    ADVANTAGE - The copolymer provides improves material utilization rate.    DETAILED DESCRIPTION - Naphthalene-containing benzo-thiadiazole units bithiophene copolymer of formula (I) is new.    n=1-70;    R1, R2=H, or 1-20Calkyl;    R3=H, 1-20C alkyl, 1-20C alkoxy or thiophenyl; and    R4=H, 1-20C alkyl or 1-20C alkoxy.    An INDEPENDENT CLAIM is included for preparing the copolymer of formula (I).
NOVELTY - Preparation of polymeric graphene nitride quantum dots modified titania nanotube catalyst involves adding precursor in a crucible, placing titania nanotubes with length of 1-3 cm into the precursor, heating to 350-650 degrees C with speed of 3-8 degrees C/minute for 3-5 hours, and washing using 0.1 M nitric acid.    USE - Preparation of polymeric graphene nitride quantum dots modified titania nanotube catalyst used for producing photoelectrocatalysis hydrogen (all claimed) used in solar cells, and photocatalytic treatment of pollutants.    ADVANTAGE - The method enables environmentally-friendly preparation of polymeric graphene nitride quantum dots modified titania nanotube catalyst having excellent photocatalytic activity by a simple process with high productivity.
NOVELTY - The device has middle position vaporizer whose upper end is set with rectifying tower portion (5). A bottom of ammonium hydroxide high feeding tank (1) is set with metal tube flow meter (2). A discharge hole is connected with metal tube flow meter (10) which is connected with third automatic adjusting valve. Industrial liquid ammonia receiving tanks (12,13) are connected with rectifying tower kettle (4) and carburetor that is set with tower water outlet (15). A bottom of ammonia receiving tank is set with industrial liquid ammonia filling port (14).    USE - Waste ammonium hydroxide recovery device used for producing ultra-pure ammonia for use as raw material during manufacturing of semiconductor LED, flat panel display (FPD) and crystal silicon solar battery sheet.    ADVANTAGE - The environment protection by using the waste ammonium hydroxide recovery device can be improved and enhanced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a waste ammonium hydroxide recovery method of producing ultra-pure ammonia.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the waste ammonium hydroxide recovery device.    Ammonium hydroxide high feeding tank (1)    Metal tube flow meters (2,10)    Rectifying tower kettle (4)    Rectifying tower portion (5)    Industrial liquid ammonia receiving tanks (12,13)    Industrial liquid ammonia filling port (14)    Tower water outlet (15)
NOVELTY - A glass plate comprises alumina, zirconia, sodium oxide, potassium oxide, magnesium oxide, calcium oxide, strontium oxide, barium oxide, zirconia, and ferric oxide, in preset mass ratio, and has a strain point of greater than 580 degrees C.    USE - Glass plate is used for thin-film solar cells e.g. copper-indium selenide type thin-film solar cell and cadmium telluride type thin-film solar cells (all claimed).    ADVANTAGE - The glass plate has high strain point and enables manufacture of thin-film solar cells with high productivity.    DETAILED DESCRIPTION - A glass plate comprises alumina, zirconia, sodium oxide, potassium oxide, magnesium oxide, calcium oxide, strontium oxide, barium oxide, zirconia, and ferric oxide, in preset mass ratio, and has a strain point of greater than 580 degrees C. (5Al2O3+7.5ZrO2-15Na2O-5K2O)=-32 to 60. (0.012MgO+0.016CaO+0.021SrO+0.023BaO+0.021ZrO2-Fe2O3)=0.27-0.6.
NOVELTY - A glass plate comprises 40-70 %mass silica, 1-20 %mass alumina, 5-20 %mass lithium oxide, sodium oxide and potassium oxide, 5-40 %mass magnesium oxide, calcium oxide, strontium oxide and barium oxide, 0.1-10 %mass zirconia. The ratio of lithium oxide, sodium oxide and potassium oxide with respect to sum total of magnesium oxide, calcium oxide, strontium oxide and barium oxide is 0.2-1.0. The glass plate has strain point at 600 degrees C or more.    USE - Glass plate is used for copper indium selenide type thin film solar cell and cadmium telluride type thin film solar cell (all claimed).    ADVANTAGE - The glass plate provides solar cells with improved photoelectric conversion efficiency.
NOVELTY - An indium-tin oxide powder has a true density of 5.75-6.8 g/cm3 as measured by substitution method using helium gas in a pycnometer. The specific surface area of the indium-tin-oxide powder is 2-100 m2/g, when measured by BET method.    USE - Indium-tin oxide powder is used for composition used for formation of transparent conductive film used for solar cell and touchscreen (all claimed).    ADVANTAGE - The indium-tin oxide powder has reduced refractive index, and desired density and specific surface area, and provides the solar cell with high generating efficiency and the touchscreen with desired brightness, and is manufactured by simple method.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of indium-tin oxide powder, which involves mixing an alkali and a mixed solution containing indium salt and tin salt at 0-15 degrees C, co-precipitating the hydroxide of indium and tin, and thermally-decomposing at 300-950 degrees C;    (2) composition, which contains the indium-tin oxide powder and a dispersion medium; and    (3) transparent conductive film, which contains the indium-tin oxide powder.
NOVELTY - A resin composition contains resin (A) having 2 or more hydroxyl groups in a molecule, isocyanate compound (B) having 2 or more isocyanate groups in a molecule, and metal-containing coupling agent (C) (I).    USE - Resin composition for adhesive agent e.g. oxygen barriering adhesive agent for multilayer film for laminate (all claimed). Uses include but are not limited to packaging material for foodstuff, protective films for solar cells, gas-barrier substrate for display elements, building material, and industrial material.    ADVANTAGE - The adhesive agent formed of resin composition has excellent oxygen barrier property and laminate strength.    DETAILED DESCRIPTION - A resin composition contains resin (A) having 2 or more hydroxyl groups in a molecule, isocyanate compound (B) having 2 or more isocyanate groups in a molecule, and metal -containing coupling agent (C) of formula (I).    M=Si, Ti or Al;    X=1-15C linear alkylene, branched alkylene, arylene or arylalkylene;    R=1-8C alkyl, cycloalkyl, aryl or aralkyl;    Z=organic group chosen from vinyl, epoxy, amino, imino, isocyanate or mercapto;and    n=1-3.    INDEPENDENT CLAIMS are included for the following:    (1) adhesive agent, which is formed of resin composition;    (2) laminate, which is formed by coating and hardening the resin composition on a base material; and    (3) multilayer film, which has layer formed by adhesive agent.
NOVELTY - An organic polymeric multi-metallic alkoxide or aryloxide composition (C1) comprises an organic polymer having metal coordination sites, and multi-metallic alkoxide or aryloxide molecules that are coordinated with the organic polymer.    USE - As dielectric materials in thin film transistors, organic field effect transistors, integrated circuits, active-matrix displays, and solar cells.    ADVANTAGE - The organic polymeric multi-metallic alkoxide or aryloxide composition provides improved properties such as improved mobility for dielectric materials in various devices; improves the properties of organic field effect transistors including n-type or p-type organic field effect thin film transistors, using improved dielectric materials; can be readily manufactured thin film devices using low-cost processes; increases the dielectric constant of the resulting dielectric layers.    DETAILED DESCRIPTION - An organic polymeric multi-metallic alkoxide or aryloxide composition (C1) comprises an organic polymer having metal coordination sites, and multi-metallic alkoxide or aryloxide molecules that are coordinated with the organic polymer, where the multi-metallic alkoxide or aryloxide molecules include (M')n(OR)x.    M'=metal selected from Group 2 of the Periodic Table, or metal selected from any of Groups 3 to 12 and Rows 4 and 5 of the Periodic Table;    n=at least 2;    R=alkyl or aryl;    x=at least 2.    Provided that: at least one M' is a metal selected from Group 2 of the Periodic Table and at least one other M is a metal selected from any of Groups 3-12 and Rows 4 and 5 of the Periodic Table. An INDEPENDENT CLAIM is included for making the organic polymeric multi-metallic alkoxide or aryloxide composition (C1), involving mixing a non-aqueous solution of an organic polymer comprising metal coordination sites with a multi-metallic alkoxide or aryloxide in an organic solvent, and removing the organic solvent.
NOVELTY - A photovoltaic device has a glass substrate or superstrate, a doped n-type layer (A) provided adjacent to glass substrate or superstrate, and comprising tellurium and cadmium, doped p-type layer (B) provided adjacent to layer (A), and comprising cadmium and tellurium, and layer (C) provided adjacent to doped n-type or p-type layer (B), and comprising cadmium and tellurium.    USE - Photovoltaic device is used for reverse p-n junction solar cell device.    ADVANTAGE - The photovoltaic device has excellent conversion efficiency, and is manufactured economically.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the p-n junction solar cell device.
NOVELTY - A deposition method involves positioning a substrate in a sputtering chamber comprising a zinc-containing target, delivering a sputtering gas to the sputtering chamber, activating the sputtering gas, and depositing a semiconductor layer comprising a ternary compound of zinc, oxygen and nitrogen, and having transmittance less than 80%, on a substrate.    USE - Deposition method is used for forming semiconductor film (claimed). Uses include but are not limited to thin film transistor, liquid crystal display, organic light-emitting display, solar cell panel and quantum dot display.    ADVANTAGE - The method enables efficient deposition of semiconductor film having excellent mobility.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor film.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of sputtering chamber.    Physical vapor deposition chamber (100)    Substrate (102)    Target (104)    Susceptor (106)    Actuator (112)
NOVELTY - Photovoltaic stack of layers are formed on a substrate, in which at least one layer of the photovoltaic stack of layers includes a microcrystalline layer. A vacuum chamber is purged with a gettering gas to remove contaminant species from the chamber, a microcrystalline layer is formed, and deposited on the substrate at a vacuum base pressure of more than 5x 105 Torr, to form photovoltaic device.    USE - Formation of photovoltaic device. Uses include but are not limited to silicon-based solar cell, solar panel, calculator and solar powered light.    ADVANTAGE - The method provides photovoltaic device having improved efficiency by an economical process in low vacuum.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the photovoltaic device having microcrystalline layers.    Tandom cell structure (100)    Substrate (102)    Top cell (115)    N-type layer (118)    Lower level cells (125)
NOVELTY - The method involves forming a porous layer on a surface of a substrate, the porous layer comprising particles and voids. A solution (208) is dispensed into first and second regions, but not into a region between the first and second regions, of the porous layer to provide a patterned composite layer. The region between the first and second regions is removed without removing the first and second regions, then the substrate is heated.    USE - Fabrication method of solar cell for converting solar radiation into electrical energy.    ADVANTAGE - A new interaction is created between porous mixture and a dopant material such that subsequent etch processes create a pattern printed, doped, and topologically improved coating by removal of the porous surface material. The printed qualities of a solvent based ink jetted material are improved by creating a new composite material.    DESCRIPTION OF DRAWING(S) - The drawing illustrates a cross-sectional view of a stage in the fabrication of a solar cell.    Solution (208)    Second solution (212)    Dual-patterned composite layer (214)
NOVELTY - A sputtering target comprises copper, indium, gallium, selenium, and unavoidable impurity as a main component. The atomic ratio of selenium to total content of copper, indium, gallium and selenium is 50.1-60%.    USE - Sputtering target is used for forming thin film e.g. light-absorption layer for solar cell.    ADVANTAGE - The solar cell containing the film has high energy-conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of sputtering target.
NOVELTY - A solution comprising a solvent, a polymer, and an organic acid is prepared and stirred, to obtain a stirred solution. A copper precursor and reducing agent (A) are added to the stirred solution, to produce reactant solution. A reducing agent (B) is added to the reactant solution and reacted for 30 minutes to 5 hours. Copper nanoparticles are separated from the reactant solution, and collected. Thus, the manufacture of copper nanoparticles is enabled.    USE - Manufacture of copper nanoparticles used for ink (claimed). Uses include but are not limited to display, radio-frequency identification, flexible board, solar cell, thin-film transistor, and memory device.    ADVANTAGE - The method enables manufacture of copper nanoparticles having excellent oxidation resistance, by simple and environmentally-friendly process.
NOVELTY - The method involves providing a semiconductor substrate (10) in a deposition chamber of a vapor deposition apparatus. Gaseous silicon species are supplied into the chamber, resulting in the formation of a copper silicide surface layer on a surface of the copper-containing conductor (42) and in the formation of amorphous silicon on top of the passivation layer (16) at the first side of the substrate. A protective cover (51) of an insulating silicon compound, e.g. silane compound, is provided on the surface layer, the protective cover comprising both the surface layer and the protective layer.    USE - Manufacturing method for solar cell (claimed).    ADVANTAGE - The use of a copper silicide as a surface layer, covered with a protective layer of an insulating silicon compound, results in good surface protection. The surface layer ensures the lateral extension of a stable bond across the surface, while the protective layer provides the protection function in the form of a closed coating that is corrosion-resistant. The interface layer constitutes a plating base and a copper-containing conductor is deposited in an electrochemical process, resulting in a low-cost process that is robust, suitable for creation of conductors of sufficient height and thickness to provide low resistance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional, diagrammatic view of en electronic device, such as a solar cell.    Semiconductor substrate (10)    Passivation layer (16)    Interface layer (41)    Copper-containing conductor (42)    Protective cover (51)
NOVELTY - A polycrystalline silicon (24) obtained by the zinc reduction method is installed into the washing tank (21) with washing basket (25). The washing liquid (22) in washing tank is supplied through a washing-liquid nozzle (20), to wash the polycrystalline silicon. The polycrystalline silicon is washed using ultrasonic cleaning process.    USE - Washing method of polycrystalline silicon used as raw material for semiconductor and solar cell.    ADVANTAGE - The method enables efficient washing of polycrystalline silicon with reduced impurities.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of washing method of polycrystalline silicon.    Washing-liquid nozzle (20)    Washing tank (21)    Washing liquid (22)    Polycrystalline silicon (24)    Washing basket (25)
NOVELTY - A liquid composition comprises etching component(s) chosen from salt of Lewis' acid having structure including boron and halogen bonded with boron, Lewis' acid and compound capable of generating the Lewis' acid, solvent and thixotropic nature imparting agent. The etching component is solid at room temperature. The content of the thixotropic nature imparting agent is 0.1-5 %mass of whole of liquid composition.    USE - Liquid composition is used for removal of silicon nitride film for substrate (all claimed) for solar cell.    ADVANTAGE - The silicon nitride film is removed using the liquid composition at reduced temperature.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) removal of silicon nitride film; and    (2) substrate, which is obtained by removing silicon nitride film.
NOVELTY - A glass substrate is prepared (S110) for carrying out physical reinforcement. The process gas containing hydrogen fluoride (HF) gas is contacted (S120) with surface of the glass substrate, in which physical reinforcement is carried out at 250-400 degrees C, to obtain reflection preventing glass.    USE - Manufacture of reflection preventing glass. Uses include but are not limited to building material glass, motor vehicle glass, display glass, optical element, solar cell glass, show window glass, optical glass and spectacle lens.    ADVANTAGE - The method enables safe manufacture of reflection preventing glass with reduced explosiveness.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of manufacture of reflection preventing glass. (Drawing includes non-English language text)    Preparation of glass substrate (S110)    Contacting process gas (S120)
NOVELTY - A curable resin composition containing organopolysiloxane having alkenyl group, organopolysiloxane having hydrogen atom coupled with silicon atom, platinum metal-type catalyst, reaction inhibitor and solvent is applied on support substrate (10), and non-hardened curable resin composition layer (12) is formed. Inhibitor and solvent are removed by arranging non-hardened layer on setter (54) mounted in top portion of support pin (52), and layer is hardened to form substrate with resin layer. A glass substrate is laminated on resin layer, and glass laminate is manufactured.    USE - Manufacture of glass laminate for manufacturing electronic device (claimed) e.g. solar cell, liquid crystal panel and organic electroluminescent panel.    ADVANTAGE - The glass laminate having excellent flatness is manufactured. The generation of gap between resin layer and glass substrate is suppressed.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of electronic device, which involves forming component for electronic devices on the surface of glass substrate of glass laminate, and removing support substrate with resin layer from laminate.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view explaining manufacture of glass laminate.    Support substrate (10)    Curable resin composition layer (12)    Support stand (50)    Support pin (52)    Setter (54)
NOVELTY - A cation moving-type electricity storage device comprises an electrolyte layer, a positive electrode and negative electrode provided on both sides electrolyte layer. At least one electrode is a complex containing electrode active material from which electroconductivity changes with insertion and detachment of ion, anionic material which is fixed in the electrode, and porous carbon material.    USE - Cation moving-type electricity storage device is used as lithium secondary battery. Uses include but are not limited to personal computer, mobile telephone, hybrid electric vehicle, electric vehicle, fuel cell electric vehicle and portable information terminal.    ADVANTAGE - The cation moving-type electricity storage device has excellent capacitance density and charge-and-discharge property.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) electrode;    (2) porous sheet; and    (3) doping rate improvement method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of electrode.    Electrical power collectors (1, 5)    Positive electrode (2)    Electrolyte layer (3)    Negative electrode (4)
NOVELTY - An organic solvent dispersion comprises a conductive polymer/polyanion complex (A) containing a polythiophene and a sulfo anion-group-containing polymer and having structural unit (I), an amine compound (B) (II), an alcohol-soluble compound (C) (III), and an alcohol-containing organic solvent (D).    USE - Organic solvent dispersion is used for composition for forming electroconductive film (all claimed) for electronic component carrier tape, magnetic card, magnetic tape, magnetic disc, release film integrated circuit tray, organic electroluminescent element and solar cell.    ADVANTAGE - The organic solvent dispersion has excellent storage stability. The electroconductive film formed using the composition containing the organic solvent dispersion has reduced time-dependant fall of width.    DETAILED DESCRIPTION - An organic solvent dispersion comprises a conductive polymer/polyanion complex (A) containing a polythiophene and a sulfo anion-group-containing polymer and having structural unit of formula (I), an amine compound (B) (II), an alcohol-soluble compound (C) (III), and an alcohol-containing organic solvent (D).    A=1-12C alkylene;    X1=1-40C alkyl, 3-40C alkenyl or 3-40C aralkyl;    Y'=oxyethylene, oxypropylene or oxyethylene oxypropylene;    m=1-20;and    X1-X7=H, hydroxy or alkoxy, and at least 2 is hydroxy.    INDEPENDENT CLAIMS are included for the following:    (1) electroconductive composition, which comprises components (A-D) and binder component chosen from active energy ray radical polymerizable compound, epoxy resin and non-active energy beam radical polymerizable acrylic copolymer; and    (2) electroconductive film, which is obtained by coating the electroconductive composition to a base material, and irradiating an active energy ray.
NOVELTY - p-type organic semiconductor material (I), is new.    USE - The semiconductor material is useful in optoelectronic devices including organic solar cell, organic LED, or organic thin-film transistor.    ADVANTAGE - The semiconductor material: replaces poly(3-hexylthiophene), and thus enhances power-conversion efficiency, and increases organic solar cell performance; and can be easily and regularly stacked to form a film.    DETAILED DESCRIPTION - p-type organic semiconductor material of formula (I), is new.    C1 = conjugated oligomer; and    E1 = electron withdrawing group.    DESCRIPTION OF DRAWING(S) - The figure illustrates a schematic representation of an organic solar-cell device.    Organic solar-cell device (10)    Anode (11)    Hole transport layer (12)    Active layer (13)    Cathode (14)
NOVELTY - A polyvinylidene chloride emulsifier contains 40-50 pts. wt. deionized water, 30-40 pts. wt. vinylidene chloride monomer, 2-10 pts. wt. acrylate monomer, 5-20 pts. wt. abundant polar radical monomer, 0.1-5 pts. wt. initiator, and 0.5-1.5 pts. wt. emulsifying agent in which abundant polar radical monomer is 2,2-dimethyl-4-amyl alcohol ester, lauryl alcohol ester, and/or cellulose acetate.    USE - A polyvinylidene chloride emulsifier for weather barrier coating (claimed) and outermost layer of solar battery backsheet material.    ADVANTAGE - Emulsifier has excellent weather resistance and improved adhesive reinforcing layer on intermediate structure.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of polyvinylidene chloride emulsifier which involves vacuum pumping reaction container, introducing inert gas, adding deionized water, initiator, abundant polar radical monomer, acrylate monomer, and emulsifying agent, heating and stirring at 140-160 degrees C, maintaining constant pressure of 0.2-1.2 MPa in reaction container and vinylidene chloride monomer, continuously reacting for 20-40 minutes, cooling at 110-125 degrees C, and stirring for 10-30 hours.
NOVELTY - Preparing porous silicon material comprises introducing transition metal salt precursor in an organic solvent containing mineralizing agent to perform catalytic pore forming reaction.    USE - The porous silicon material is useful in an integrated circuit, a solar battery and a lithium ion battery (claimed).    ADVANTAGE - The method is capable of preparing porous silicon material in a cost effective manner.
NOVELTY - Catalyst comprising N, N'-disalicylaldehyde and transition metal salts of ethylenediamine according to the ratio of 1:1-1:0.015, is new, where the carbon material in N, N'-disalicylaldehyde and transition metal salts of ethylenediamine are present in the ratio of 40-90:10-60.    USE - The catalyst is useful in preparation of a membrane-electrode assembly of a fuel cell including methanol, ethanol, propanol, glycerol or dimethyl ether, alkaline, hydrogen-alkaline, zinc-air or microbial fuel cells(claimed).    ADVANTAGE - The catalyst reduces preparation cost and improves wear resistance of the fuel cell.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) preparing the catalyst; and (2) use of catalyst in the preparation of a membrane-electrode assembly of a fuel cell, where the application method comprises carrying out ultrasonic dispersion of catalyst in water and then adding ethanol or isopropyl alcohol to obtain the catalyst solution, dipping the electrode into the catalyst solution and then naturally drying to form a catalyst layer, dropping methanol solution and Nafion(RTM: Sulfonated tetrafluoroethylene based fluoropolymer-copolymer) solution as adhesive on the catalyst layer and then naturally airing.
NOVELTY - Preparation of three-dimensional porous graphene involves adding 500 mg oxidized graphite in a quartz tube, pumping vacuum of 8x 104-9x 104 Pa to tube, closing the tube valve, sealing tube in muffle furnace, heating at 500-1200 degrees C for 5-30 minutes with rate of 5-20 degrees C/minute for 5-30 minutes, taking out the quartz tube and immersing in ice water for 3-5 minutes, repeating heating-quenching process for 1-9 times, and collecting quartz tube product.    USE - Preparation of three-dimensional porous graphene used in lithium ion battery, fuel cell, solar cell, photocatalyst, catalytic oxidation, gas sensor, and drug delivery (all claimed).    ADVANTAGE - The method efficiently and economically provides environmentally-friendly three-dimensional porous graphene.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for usage method of three-dimensional porous graphene in lithium-ion battery, fuel cell, solar cell, photocatalyst, oxidation, gas sensor, and drug delivery system combined with graphene oxide, tin oxide, iron oxide, cobalt oxide, copper oxide, molybdenum oxide, gold nanoparticles and palladium nanoparticles.
NOVELTY - A hydrogen chloride composite ultrafiltration or nanofiltration membrane is prepared by mixing high molecular polymer substrate and a UF polymer with a negatively charged nanofiltration membrane or filler material, and uniformly distributing in the filler within the ultra-filtration or nanofiltration membrane with negative polymer filler mass fraction of 0.5-20 wt.%.    USE - Hydrogen chloride composite ultrafiltration or nanofiltration membrane for fuel cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing hydrogen chloride composite ultrafiltration or nanofiltration membrane.
NOVELTY - Chiral triphenylene discotic liquid crystal dimer compounds, particularly isomannide series compound (I) and isosorbide series compound (II) are new.    USE - Chiral triphenylene discotic liquid crystal dimer compounds, particularly isomannide series compound and isosorbide series compound for use in basic research, organic light emitting diode, organic solar cell and organic thin film transistor.    DETAILED DESCRIPTION - Chiral triphenylene discotic liquid crystal dimer compounds, particularly isomannide series compound of formula (I) and isosorbide series compound of formula (II) are new.    m and n=1,3,4,5,6 or 7.    An INDEPENDENT CLAIM is included for a method for preparing chiral triphenylene discotic liquid crystal dimer compounds, particularly isomannide series compound of formula (I) and isosorbide series compound of formula (II).
NOVELTY - The method involves preparing a surface of a flat wide gap semiconductor. A large energy gap semiconductor is contained with titanium dioxide. Graphene is transferred to the surface of the wide gap semiconductor. A light material layer is obtained. A solar battery is obtained. Mechanical polishing process is performed to polish a titanium oxide single-crystal substrate. Oxygen plasma etching process is performed. Chemical mechanical polishing process is performed to obtain a finished product.    USE - Selective tunneling theory based solar battery preparation method.    ADVANTAGE - The method enables greatly simplifying structure of a solar battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a selective tunneling theory based solar battery preparation method.'(Drawing includes non-English language text)'
NOVELTY - The method involves orientating gallium arsenide substrate. A long layer of gallium arsenide buffer layer is grown, and multilayer embedded structure of gallium antimonide quantum point material is grown. A single layer periodic structure is grown on gallium antimonide quantum point layer. Growth period of periodic structure is repeated to more than three times to form multi-layer structure. Growth temperature of gallium antimonide quantum point layer is 0-30 degrees C to ensure stable curing of gallium antimonide quantum point layer.    USE - Liquid phase epitaxial growth method of gallium antimonide quantum point material of multi layer structure for solar device.    ADVANTAGE - The cost for performing the liquid phase epitaxial growth process is reduced, and the growth process is performed in simple and convenient processes. The light emitting property of the multi layer structure is greatly improved, and the width of the structure is reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the liquid phase epitaxial growth process. (Drawing includes non-English language text)
NOVELTY - The method involves fully dispersing and dissolving powder-shaped conductive carbon black in absolute ethyl alcohol. Ultrasonic agitation process is performed at a lower condition. A micelle uniformity elastic material is obtained. Distilled water is sprayed on a roller. PTFE melting and volatilizing process is performed to obtain a diffusion layer that is formed with a pore. A catalytic layer is fully embedded in a stainless steel net that is arranged in a rolling machine. The diffusion layer is pressed to a side of the stainless steel net.    USE - Micro-biological fuel battery air cathode sheet preparation method.    ADVANTAGE - The method enables reducing air cathode sheet charge transferring resistance, and improving preparation efficiency, electro-chemical property and potential environment-friendly energy.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a micro-biological fuel battery air cathode sheet.
NOVELTY - The equalizer has an equalization circuit unit whose end is provided with an anode of a single battery. An end of a balance circuit unit and a cathode of the single battery are connected with each other. Another end of the balance circuit unit and an anode of the single battery are connected with each other. The balance circuit unit includes a comparator. A negative signal input end of the comparator is connected with an output end of the comparator. A negative power supply input end of the comparator and a connecting end of the balance circuit unit are connected with each other.    USE - Vanadium single-battery voltage equalizer.    ADVANTAGE - The equalizer is simple in structure and practical to use, and effectively realizes voltage equalization operation.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a vanadium single-battery voltage equalizer.'(Drawing includes non-English language text)'
NOVELTY - The method involves setting (S1) the substrate holder of a silicon wafer in a plasma generating device, and setting (S1) a magnetic coil or magnetic steel around the substrate holder. Reaction gas is supplied (S2) to the plasma generating device. A plasma excitation power supply causes plasma to be generated in the plasma generating device. The reaction gas is excited (S3) by the plasma.    USE - Polishing method of silicon wafer, e.g., for manufacture of solar cells.    ADVANTAGE - Good polishing effect is achieved while reducing environmental pollution.    DESCRIPTION OF DRAWING(S) - The drawing is a flowchart illustrating the polishing method of silicon wafer. (Drawing includes non-English language text).    Silicon wafer removing step (S0)    Substrate holder/magnetic coil setting step (S1)    Reaction gas supplying step (S2)    Reaction gas exciting step (S3)    Restraining magnetic field generating step (S4)
NOVELTY - This utility new type claims a one for vanadium battery electrolyte circulating pump of simple regulator, voltage regulator include, a potentiometer, a first to a fifth, first operational amplifier, second operational amplifier, a first capacitance and second capacitance. When the potentiometer regulating end of adjusting potentiometer of the other end, that is to say, the purpose time output end of the first operational amplifier, the end potential of the bonus device, would the change so as to realize the electrolyte circulating pump continuous adjustable of, compared with the existing technology, this utility new type has a circuit structure is simple, the volume is small, the using element, low cost, which is good for popularization and promotion.
NOVELTY - A platinum-tungsten trioxide-carbon fuel cell catalyst comprises Vulcan XC72 (RTM: conductive carbon black pellet or powder) as carrier, platinum nanoparticle as active component and tungsten trioxide as additive.    USE - Platinum-tungsten trioxide-carbon fuel cell catalyst used as proton exchange membrane.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of platinum-tungsten trioxide-carbon fuel cell catalyst comprising taking mesoporous silicon oxide molecular sieve as template, adding tungsten precursor, dispersing in non-aqueous solvent, filtering at 10-50 degrees C, stirring for 12-48 hours, evaporating at 20-80 degrees C, heating at 300-800 degrees C for 3-8 hours, adding sodium hydroxide, separating, washing, vacuum drying at 40-80 degrees C for 5-48 hours, mixing chloroplatinic acid and ethylene glycol solution, adding sodium hydroxide, adjusting pH to 9-13, microwave heating for 0.5-5 minutes, stirring, cooling, adding platinum/ethylene glycol to mesoporous silicon oxide molecular sieve, adding nitric acid solution, adjusting pH to 3, stirring for 24-48 hours, standing for 3-6 days, centrifuging, washing, and vacuum drying.
NOVELTY - The battery has a battery unit formed with a light absorbing protecting layer, a glass layer, a cadmium telluride/cadmium sulfide layer, a graphite layer and a back electrode layer, where thickness of the light protecting layer, the glass layer, the cadmium telluride/cadmium sulfide, the graphite layer and the back electrode layer are 50 nm, 10 to 15 nm, 200-350nm, 100-200nm and 200-350nm, respectively.    USE - Cadmium telluride thin film solar energy battery.    ADVANTAGE - The battery has high light absorption rate and wear rate and low production cost.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a cadmium telluride thin film solar energy battery manufacturing method.
NOVELTY - A supply process of hydrogen selenide mixed gas for solar cells involves storing hydrogen-selenide mixed gas and inert gas supplied from base gas supply flow path and 100% selenized hydrogen gas supplied from source gas supply flow path in buffer tank in adjusted concentration, supplying hydrogen-selenide mixed gas from buffer tank, measuring concentration of mixed gas after mixing inert gas and 100% selenized hydrogen gas, measuring pressure in buffer tank while controlling both flow volume of inert gas and 100% selenized hydrogen gas, and controlling flow volume of the gases.    USE - A supply process of hydrogen selenide mixed gas for solar cells (claimed).    ADVANTAGE - Drift phenomenon can be suppressed. Error of concentration actual value of hydrogen selenide in the mixture after supply start is reduced.    DETAILED DESCRIPTION - A supply process of hydrogen selenide mixed gas for solar cells involves storing hydrogen-selenide mixed gas and inert gas supplied from base gas supply flow path and 100% selenized hydrogen gas supplied from source gas supply flow path in buffer tank in adjusted concentration, supplying hydrogen-selenide mixed gas from buffer tank, measuring concentration of mixed gas after mixing inert gas and 100% selenized hydrogen gas, measuring pressure in buffer tank while controlling both flow volume of inert gas and 100% selenized hydrogen gas, and controlling flow volume of inert gas and 100% selenized hydrogen gas according to measured pressure.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the supply process of hydrogen-selenide mixed gas for solar cells. (Drawing includes non-English language text).    Mixing inert gas and selenized hydrogen gas in a mixer (S2)    Measuring selenized hydrogen concentration (S3)    Storing hydrogen selenized mixed gas on buffer tank (S4)    Measuring pressure of hydrogen selenized mixed gas (S5)    Computing mixing flow volume correction coefficient (S6)
NOVELTY - A film is formed on base material (2) in spraying process using mixed powder obtained by mixing copper-gallium alloy powder containing 15.15-50 %mass gallium, and remainder of copper in mass ratio of 99:1-70:30, to obtain copper-gallium alloy sputtering target (1). The copper-gallium alloy sputtering target comprises 15-45 %mass gallium, and remainder of copper and unavoidable impurities.    USE - Manufacturing method of copper-gallium alloy sputtering target used for forming light-absorption layer of copper-indium-gallium-selenide quaternary alloy solar cell.    ADVANTAGE - The method enables manufacture of copper-gallium alloy sputtering target by preventing crack and notch, irrespective of shape and dimension of base material.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for copper-gallium alloy sputtering target.    DESCRIPTION OF DRAWING(S) - The drawing shows perspective view of copper-gallium alloy sputtering target. (Drawing includes non-English language text)    Copper-gallium alloy sputtering target (1)    Base material (2)    Target material (3)
NOVELTY - The method involves generating a plasma (330) in an arc chamber (304), defined by an arc chamber body (302), and extracting plasma from the arc chamber body through an extraction aperture (306) disposed on a faceplate (307) of the arc chamber to an extraction region (308) outside the arc chamber. Ions are directed within the plasma disposed in the extraction region toward the faceplate.    USE - Method of reducing glitch rate of ion implanter for introducing conductivity-altering impurities into workpiece, such as solar cell.    ADVANTAGE - Reducing glitching in an ion implanter will increase throughput and improve the quality of the implanted workpieces.    DESCRIPTION OF DRAWING(S) - The drawing is a schematic figure which illustrates an ion implanter during a plasma-assisted conditioning cycle.    Arc chamber body (302)    Arc chamber (304)    Extraction aperture (306)    Faceplate (307)    Extraction region (308)    Plasma (330)
NOVELTY - The method involves forming a passivation layer on a graded-density silicon antireflection surface, where a chamber is maintained at a temperature within a high-temperature processing range. A dopant-containing layer is formed on a silicon surface (14) during or prior to emitter junction formation, where formation of the passivation layer is performed with the dopant-containing layer in place on a substrate (12). A contact is formed on the substrate after forming the passivation layer without removing dopant materials.    USE - Method for processing a silicon surface to provide surface passivation for high-efficiency silicon-based devices i.e. high efficiency silicon solar cells.    ADVANTAGE - The method enables eliminating a separate high-temperature passivation step and eliminating the step of stripping the phosphorus silicate glass or other dopant materials from the wafer or substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for processing silicon surface to provide surface passivation for high-efficiency silicon-based devices.    Substrate (12)    Silicon surface (14)
NOVELTY - The apparatus has a control unit (120) that controls measurement data which measured the result of process of substrate. A recipe optimization process unit computes a difference with target value to change portion of process conditions of recipe, so as to optimize recipe with small difference. The recipe with package optimization is searched out of storage unit (123). A recipe package optimization process unit is provided to change portion of process conditions similarly to the recipe in optimization process execution about searched recipe.    USE - Substrate processing apparatus such as Vertical heat processing apparatus for processing semiconductor wafer. Can also be used in sheet film-forming apparatus and sheet etching apparatus, for processing flat panel display and solar cell.    ADVANTAGE - The time which the optimization of recipe requires can be shortened. The improvement of productivity of substrate processing apparatus can be obtained.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a control apparatus of substrate processing apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a longitudinal cross-sectional view of the vertical heat processing apparatus. (Drawing includes non-English language text)    Vertical heat processing apparatus (100)    Substrate process unit (110)    Control unit (120)    User interface unit (122)    Storage unit (123)
NOVELTY - The apparatus (1) has a storage tank (4) which stores phosphoric acid aqueous solution. A substrate holding unit holds the substrate to a horizontal position in the state at which the phosphoric acid aqueous solution in storage tank is made to immerse the substrate. A heating unit has a heat-emitting portion facing the substrate currently hold at substrate holding unit, and heats the substrate by the thermal radiation or heat transfer from heat-emitting unit.    USE - Substrate processing apparatus of sheet form for performing etching process of silicon oxide film and silicon nitride film on surface of substrate e.g. semiconductor wafer used for manufacturing semiconductor device. Can also be used for processing substrate for LCD device, substrate for plasma display, substrate for field emission display, substrate for optical disk, substrate for magnetic disk, substrate for magneto optical disk, substrate for photo-mask, ceramic substrate, and substrate for solar cell.    ADVANTAGE - Since the heating unit heats the substrate by the thermal radiation or heat transfer from heat-emitting unit, the phosphoric acid concentration can be maintained low, and the phosphoric acid aqueous solution can be made to act on the nitride film of surface of substrate. The etching rate can be raised, and selection ratio of nitride film can be maintained highly and simultaneously.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the substrate processing apparatus. (Drawing includes non-English language text)    Substrate processing apparatus (1)    Storage tank (4)    Water supply path (61)    Bottom supply pipe (63)    Bottom valve (64)
NOVELTY - The battery life prediction apparatus has heat-flow sensor (2) which is provided to detect the temperature with respect to a battery (1) at locations. The change of the thermal flux caused by deterioration of the battery from temperature differences of locations is measured. The heat-flow sensor is equipped with the substrate. The surface of substrate is arranged parallel with respect to the attachment surface of the battery.    USE - Apparatus for predicting life of battery such as secondary battery e.g. lithium ion battery, fuel cell, and solar cell (all claimed), used in electronic device, electric vehicle e.g. personal computer.    ADVANTAGE - The change of the thermal flux caused by deterioration of the battery from temperature differences of locations is measured, so that the durability of the battery can be estimated efficiently. The change of the heat flow rate of the battery life prediction apparatus can be measured effectively.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the battery life prediction system.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the battery life prediction apparatus.    Battery (1)    Heat-flow sensor (2)    Elastic portion (3)    Case (4)    Battery can (11)
NOVELTY - The method involves performing plasma etching by introducing treatment gas containing fluorocarbon gas and oxygen gas into a treatment chamber. A recessed portion is formed to predetermined depth in a multilayer film formed on a base silicon film and is provided with a laminated film formed by alternately laminating silicon oxide film and silicon nitride film with different relative dielectric constants. The over etching process is repeatedly performed (S140) with the flow rate ratio of oxygen gas to fluorocarbon gas to be increased/reduced compared to first over etching process.    USE - Method for processing semiconductor wafer of three-dimensional NOT-AND (NAND) flash memory, using plasma such as parallel-plate capacitive coupling type plasma. Can also be used in large substrate for flat panel display (FPD), electroluminescent element and solar cells, using inductively-coupled-plasma (ICP),RLSA plasma and magnetron plasma.    ADVANTAGE - Since the lower end shape of recessed portion is expanded when plasma-etching the multilayer film, the variation of the plasma processing apparatus can be suppressed and the inhibitory effect of a substrate loss can be heightened.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a plasma processing apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the processing of semiconductor wafer using plasma. (Drawing includes non-English language text)    Step for performing main etching process (S110)    Step for performing first over etching process (S120)    Step for performing first over etching process (S130)    Step for repeatedly performing over etching process (S140)
NOVELTY - A liquid composition comprises an etching component that is solid at room temperature, solvent, and microparticles comprising organic particulates, metal oxide fine particles and inorganic fine particles, where aspect-ratio of the microparticles is greater than or equal to 2.9.    USE - Liquid composition for use as an etching paste for removing a silicon nitride film (claimed) that is utilized for manufacturing semiconductor element or a solar cell.    ADVANTAGE - The composition has improved uniformity and printing property, and improves conversion efficiency of the solar cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for removing a silicon nitride film.
NOVELTY - A composition comprises an etching component selected from trifluoromethanesulfonic acid, trifluoromethanesulfonic acid salt, and trifluoromethanesulfonic acid ester, and a substance that dissolves the etching component at 100-250 degrees C.    USE - Composition for use as etching paste for removing a silicon nitride film (claimed) that is utilized as an interlayer insulation film, a passivation film, an anti-reflective film for manufacturing semiconductor elements and a solar cell. Can also be used for screen printing, flexographic printing, a micro contact printing, plate printing, inkjet printing, slit printing, dispenser printing, and formeless printing application.    ADVANTAGE - The composition has improved uniformity, and provides the solar cell with improved conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for removing a silicon nitride film.
NOVELTY - A liquid composition contains at least 1 etching component chosen from salt of Lewis acid containing boron and halogen coupled with boron, and Lewis acid, and compound capable of generating Lewis acid, a solvent and microparticles chosen from organic particulate, metal oxide particles and inorganic fine particles. The etching component is solid at room temperature. The total content of microparticles in composition is 0.1-5 %mass.    USE - Liquid composition for removing silicon nitride film for substrate (all claimed) used for semiconductor element and solar cell.    ADVANTAGE - The liquid composition efficiently enables removal of silicon nitride film at low temperature.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for removing silicon nitride film.
NOVELTY - The silicon mono-crystal pulling apparatus (1) has a heating element that heats a crucible (11). A heat shield board (26) is provided above the crucible and set to move an inside of a chamber (10) to a gravitational direction. An annular upper-end ring (20) supports the heat shield board. A gas introduction port (2) introduces gas in the chamber. A gas exhaust port (3) emits the gas in the chamber. The upper-end ring is fixed to a surface of a gravitational direction upper side of the annular portion. A shield ring (27) is located in the outer side of the shielding board.    USE - Silicon mono-crystal pulling apparatus for manufacturing silicon mono-crystal for solar cell and semiconductor.    ADVANTAGE - The change of radiation rate is prevented by suppressing the adhesion of silicon oxide to the chamber upper wall. High quality silicon mono-crystal can be manufactured. The productivity can be improved. Since the gas shielding wall protrudes below, the shortening of the melting time of the raw material in the melt process can be estimated.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic views of the structure of the silicon mono-crystal pulling apparatus at the time of melt process and at the time of main portion process. (Drawing includes non-English language text)    Silicon mono-crystal pulling apparatus (1)    Gas introduction port (2)    Gas exhaust port (3)    Chamber (10)    Crucible (11)    Annular upper-end ring (20)    Heat shield board (26)    Shield ring (27)
NOVELTY - The jig (50) has a mounting portion (10) which mounts the glass article (1). An abutting element (20) is made to abut the glass article. The abutting element is arranged in a contact state at the edge portion (1a) of the glass article. The thickness of the abutting element is same as the thickness of the glass article. The abutting element is provided with a material same as the material of glass article. The mounting portion is provided with a crystallized glass board containing beta-quartz solid solution or the beta-spodumene solid solution as a primary crystal structure.    USE - Jig of glass article conveying apparatus used for forming transparent conductive film and heat ray reflective film such as tin doped-indium-oxide (ITO) film and fluorine dope tin oxide (FTO) film in surface of glass article such as glass substrate for solar cell panel and glass plate for heat reflective glass, using chemical vapor deposition (CVD) apparatus.    ADVANTAGE - The mounting portion does not thermally expand by comprising with the crystallized glass board containing beta-quartz solid solution or the beta-spodumene solid solution by making a mounting portion into a primary crystal structure, so that the heat resistance and durability can be improved. The stable CVD processing can be performed, even when the spray temperature of the source gas to the glass article is high. The quality glassware which can be used for a heat reflective glass can be manufactured efficiently.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the jig for glass article film-forming.    Glass article (1)    Edge portion of glass article (1a)    Mounting portion (10)    Abutting element (20)    Jig (50)
NOVELTY - The jig (50) has a press element (20) which presses the mounting portion (10) that mounts the glass article (1). An angular portion of the glass article is provided. The press element is provided according to the size of the glass article, so that a layout change is possible. The mounting portion is provided to convey the glass article, so that a chemical vapor deposition is continuously performed to the glass article. The press element is opposingly arranged, so that the edge portion of the back and front in the conveyance direction of the glass article is covered.    USE - Jig of glass article conveying apparatus used for forming transparent conductive film and heat ray reflective film such as tin doped-indium-oxide (ITO) film and fluorine dope tin oxide (FTO) film in surface of glass article such as glass substrate for solar cell panel and glass plate for heat reflective glass, using chemical vapor deposition (CVD) apparatus.    ADVANTAGE - The mounting portion does not thermally expand by comprising with the crystallized glass board containing beta-quartz solid solution or the beta-spodumene solid solution by making a mounting portion into a primary crystal structure, so that the heat resistance and durability can be improved. The stable CVD processing can be performed, even when the spray temperature of the source gas to the glass article is high. The quality glassware which can be used for a heat reflective glass can be manufactured efficiently.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the jig for glass article film-forming.    Glass article (1)    Mounting portion (10)    Press element (20)    Weights (20a-20d)    Jig (50)
NOVELTY - A multilayer electrode consists of a conductor layer and composite electrode layers (203a,203b), provided sequentially. Each electrode layer comprises a particulate material suitable for use as active material in a metal ion battery, and a binder. A major component of the active material of layer (203a) is a material which is different from a material forming a major component of the active material of layer (203b).    USE - Multilayer electrode is used as anode in metal ion batteries (claimed) used in mobile telephones, laptops, electric vehicles, and hybrid electric vehicles. Can also be used for flow cell batteries, fuel cells, sensors, solar cells, electrical and thermal capacitors, microfluidic device, gas or vapor sensors, thermal or dielectric insulating devices, and device used for controlling or modifying transmission, absorption or reflectance of light or other forms of electromagnetic radiation.    ADVANTAGE - The multilayer electrode improves both capacity retention and cycle life of batteries.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) metal ion battery (200); and    (2) formation of multilayer electrode.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the metal ion battery having two anode layers.    Metal ion battery (200)    Conductive anode current collector layer (201)    Composite electrode layers (203a,203b)    Electrolyte (205)    Cathode layer (207)
NOVELTY - The method involves creating a temperature difference between a source and a substrate during a time interval in which source and substrate are maintained at temperatures in ranges having first and second average temperatures respectively. First average temperature is greater than second average temperature and is less than melting temperature/minimum softening temperature of a semiconductor polycrystalline/amorphous material to transfer a portion of the material from source to substrate. Source is separated from substrate to provide a coated substrate comprising a layer of the material.    USE - Method for forming layer on substrate used in fabrication of solar cell.    ADVANTAGE - The average temperature of source is greater than average temperature of substrate and is less than melting temperature/minimum softening temperature of the semiconductor polycrystalline/amorphous material in order to transfer specific portion of the semiconductor polycrystalline/amorphous material from source to substrate, and the source is separated from substrate to provide coated substrate comprising layer of the semiconductor polycrystalline/amorphous material. Thus, the high temperature challenge can be easily faced by the substrate and the low-temperature or high-temperature substrates can be used in the fabrication of solar cells.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view illustrating the relationship between power, time and temperature of source and substrate.
NOVELTY - The apparatus (1) has branch pipe (60) with several branch portions (122,123), that divides processing gas according to predetermined flow rate ratio, while supplying divided processing gas to several gas supplying zones (49). An addition pipe (130) is connected to one of the branch portions, for adding an adjustment gas to processing gas. One of the gas pipes (53,54) connected to branch portion, is provided with gas flow path that is provided with bending portion for preventing gas concentration variation according to molecular weight ratio of adjustment gas to main gas.    USE - Plasma processing apparatus e.g. parallel plate type plasma etching apparatus for processing semiconductor wafer. Can also be used in processing large substrate for flat panel display (FPD), substrate for electroluminescent (EL) device or solar battery.    ADVANTAGE - The bending portion can be arranged within a gas pipe at which main gas and adjustment gas are mixed together so that a gas flow path within the gas pipe can be lengthened and gas concentration variations according to the molecular weight ratio of the adjustment gas to the main gas can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of plasma processing apparatus.    Plasma processing apparatus (1)    Gas supplying zone (49)    Gas pipes (53,54)    Branch pipe (60)    Branch portions (122,123)    Addition pipe (130)
NOVELTY - A gas barrier laminated film (10) is obtained by laminating primer layer (12), and vapor deposition film layer (13) sequentially on surface(s) of resin base material (11). The primer layer comprises polyol having acidic group having acid value of 1-100 mg potassium hydroxide/g, and is formed using silane coupling agent having organic functional group, or hydrolyzate of silane coupling agent, and composite with isocyanate-type compound. The vapor deposition film layer contains silicon oxide at least.    USE - Gas barrier laminated film. Uses include but are not limited to electronic device-based component, packaging foodstuff, daily necessaries and pharmaceutical, solar cell back sheet, aluminum foil, electronic paper, sealing material, liquid crystal display element, solar cell, electromagnetic wave shield and touchscreen, etc.    ADVANTAGE - The transparent gas barrier laminated film has excellent adhesiveness after light irradiation test and high durability.    DESCRIPTION OF DRAWING(S) - The drawing shows sectional view of gas barrier laminated film of this invention.    Gas barrier laminated film (10)    Resin base material (11)    Primer layer (12)    Vapor deposition film layer (13)
NOVELTY - Site structure of plant consists of concrete foundation which is provided upright to site surface comprised with soil, solar cell array which is mounted on the concrete foundation, and solar cell module provided on the solar cell array. The soil of site structure comprises local soil which is mixed with organic soil improvement material. The organic soil improvement material is cut into predetermined length, and is fibrous bark of conifers such as cedar and cypress.    USE - Site structure of plant is used for photovoltaic power generation.    ADVANTAGE - The site structure is hygienic, and has excellent drainage capability and inhibits the growth of weeds. Scattering of dust in the site is prevented. Maintenance of site structure is reduced. Reproduction of various microorganisms can be suppressed. Erosion of the soil during rainfall can be eliminated.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of site structure of photovoltaic power generation plant, which involves providing the organic soil improvement material and local soil, mixing the mixture of materials on the site, secondary-mixing using cultivator to-be-towed by work vehicle, and roll-compacting the surface using rear rotation pressure machine.
NOVELTY - A platinum-based anode catalyst is prepared by crushing nanographene, adding 100 mL ethylene glycol/100 g crushed graphene, mixing ultrasonically, adding 1.5-15 wt.% organic micromolecule, stirring ultrasonically, adding deionized water at volume ratio of 1:2, stirring for 12-24 hours at 80-90 degrees C, adding 20 wt.% hexachloroplatinic acid, putting in oil bath at 110-130 degrees C for 3-5 hours, filtering, washing with deionized water and ethanol, and vacuum drying until particle size is 2-3 nm.    USE - Method for preparing platinum-based anode catalyst used for direct-methanol fuel cell (claimed).    ADVANTAGE - The method has simple operation and stable product.
NOVELTY - The apparatus (1) has a rectangular waveguide that transmits microwave. A slot antenna having slot is positioned at surface of rectangular waveguide for passing microwave. A dielectric material is arranged parallel to incident direction of microwave, so that slot of slot antenna is covered and microwave is injected to side surface of plasma production region. The plasma density between base material and target is larger at target vicinity than base material vicinity. An electron cyclotron resonance (ECR) is occurred in surface of target.    USE - Magnetron sputtering apparatus for forming film structure (claimed) on organic electro-luminance device, LED device, touch-screen, solar cell and electronic paper.    ADVANTAGE - The gas-barrier property of film structure can be improved reliably. The thickness of barrier film can be reduced effectively.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) magnetron sputter film-forming method; and    (2) film structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a front-back direction sectional view of the magnetron sputter film-forming apparatus. (Drawing includes non-English language text)    Magnetron sputter film-forming apparatus (1)    Magnetron sputter cathode (3)    Microwave plasma generation apparatus (4)    Base material (20)    Target (30)    Backing plate (31)
NOVELTY - Protective film comprises organic layer containing acrylate terminated adamantane derivatives (I) and acrylate terminated 9,9'-spirobi(fluorene)-2,7-diol derivatives (II).    USE - The protective film is useful for optical device, preferably organic LED, LCD, plasma display device and solar cell (all claimed) encapsulation.    ADVANTAGE - The protective film ensures low oxygen permeating rate and water vapor transmission rate; is heat resistant and prevents damages to optical component by mechanical impact and contraction; improves the stability and lifetime of optical device; and exhibits mono or multilayered structure.    DETAILED DESCRIPTION - Protective film comprises organic layer containing acrylate terminated adamantane derivatives of formula (I) and acrylate terminated 9,9'-spirobi(fluorene)-2,7-diol derivatives of formula (II).    R = less than or equal to 10C alkylene.
NOVELTY - The method involves heating the electric component by irradiating the laser. The membranous polymers film is compressed. The membranous polymers film is connected with the macromolecular film. The transparency of the membranous polymers film is 40% or greater. The electric component is arranged on the metallic board. The membranous polymers film is made of poly acrylonitrile (polyacrylonitrile), polyimide, polyethylene, polypropylene, ethylene vinyl acetate, PVC, polyamide and polycarbonate.    USE - Method for molding electric component such as organic LED (OLED), LCD, electrophoresis system, electrophoretic display (EPD), plasma-display panel (PDP), thin film transistor (TFT), microprocessor, RAM and solar cell, used in metallic board strip using laser.    ADVANTAGE - The electric component can be soldered effectively without need of the substrate. The thermal transformation of the macromolecular film and electric component can be increased. The efficiency of the electric component can be increased. The exhaustion of the contaminant from the electric component can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the electric component.    Macromolecular film roll (11)    Calender roll (12,14)    Middle roll (13)    Laser (15)    Metallic board strip (16)
NOVELTY - A zwitterionic carbon nanotube comprises zwitterionic polymer-modified carbon nanotube (I) obtained by modifying carbon nanotube with zwitterionic polymer. The carbon nanotube includes single-walled carbon nanotube or multi-walled carbon nanotube.    USE - Zwitterionic carbon nanotube is used for manufacture of zwitterionic carbon nanotube-metal nanoparticles composite used as cathode catalyst for fuel cell (all claimed).    DETAILED DESCRIPTION - A zwitterionic carbon nanotube comprises zwitterionic polymer-modified carbon nanotube of formula (I) obtained by modifying carbon nanotube with zwitterionic polymer. The carbon nanotube includes single-walled carbon nanotube or multi-walled carbon nanotube.    X -=Cl -, Br -, I -, BF 4-, ClO 4-, PF 6-, OH -, AlCl 4- or NTf 2-;    Y'=O or NR 1;    R 1-R 4=H, linear or branched 1-10C alkyl (optionally substituted by -OH, -COOH or -SO 3H) or aryl (optionally substituted by -OH, -Br, -Cl, -COOH, -COO-, -SO 3H, primary amine, secondary amine, tertiary amine or linear or branched 1-10C alkyl);    A=zwitterionic polymer;and    m=1-10.    INDEPENDENT CLAIMS are included for the following:    (1) zwitterionic carbon nanotube-metal nanoparticles composite of formula (II), which is obtained by fixing metal nanoparticles in zwitterionic carbon nanotube;    (2) manufacture of zwitterionic carbon nanotube, which involves modifying allyl group of carbon nanotube using imidazolium salt to obtain modified carbon nanotube of formula (III), and polymerizing zwitterionic compound and allyl group-modified carbon nanotube;    (3) manufacture of zwitterionic carbon nanotube-metal nanoparticles composite, which involves settling metal nanoparticles on zwitterionic carbon nanotube; and    (4) fuel cell, which includes zwitterionic carbon nanotube as metal-free cathode catalyst.    M=Pd, Rh, Ir, Cu, Ni, Fe or Au.
NOVELTY - Preparing highly porous material comprises synthesizing the porous material having an uniform pore size, dissolving a metal nano-particle precursor and a reducing agent in a solvent to obtain a metal nano-particle reaction solution, mixing the solution with the porous material, and filtering the solution and then drying to obtain a final product.    USE - The method is useful for preparing a highly porous material such as mesoporous or macro-porous material (all claimed), which is useful for a proton exchange membrane fuel cell.    ADVANTAGE - The method enables simple preparation of the highly porous material with uniform pore size, high specific surface area and excellent stability in a rapid manner.
NOVELTY - A seal material comprises 9-15 wt.% alumina, 35-50 wt.% silica, 25-35 wt.% calcium oxide, and 5-15 wt.% boron trioxide.    USE - Seal material is used for solid oxide fuel cell.    ADVANTAGE - The seal material has wide spheroidizing temperature and high compactness, and does not has air hole.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of seal material, which involves mixing boron-containing compound, aluminium-containing compound, calcium-containing compound and silicon-containing compound, melting, and cooling.
NOVELTY - The microcrystal sealing glass containing zinc oxide (ZnO) comprises raw materials which include boron oxide (B2O3) of 25 to 60 molecular ratio, aluminum oxide (Al2O3) of 20 to 50 molecular ratio, silicon dioxide (SiO2) of 5 to 30 molecular ratio, titanium oxide (TiO) of 0 to 5 molecular ratio, and zinc oxide (ZnO) and mixture of magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), and barium oxide (BaO).    USE - Microcrystal sealing glass containing zinc oxide (ZnO) used for SOFC.    ADVANTAGE - Promotes forming of calcium boron oxide (CaB2O4) crystal in glass by adding zinc oxide (ZnO), reduces volatile boron (B) material in working environment, improving heat stability of self-sealing glass and chemical compatibility of cathode, and at the same time, adding of zinc oxide promotes forming of calcium zinc silicon oxide (Ca2ZnSi2O7) crystal in the glass, which is good for improving the sealing glass of other module of SOFC with matching degree of hot expansion coefficient. Selection of raw materials is simplified, thus preparation process becomes easy. Maintains uniformity of mixing and distribution status of high proportion, to obtain silicon dioxide (SiO2) as the main body of reversible glass network structure. Cost is low since process is simple and feasible.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a preparation method for microcrystal sealing glass; and    (2) a utilization method for microcrystal sealing glass.
NOVELTY - This utility new type provide a one for unmanned use of solar energy system, the system is composed of a solar energy battery module, power supply management system, an energy storage battery, data interface is composed of a solar battery module of high efficiency of flexible thin film solar energy battery sheet packaging, wherein is suitable for streamline design for flexible body of surface material according to claim, and output high efficiency, stability, power supply management system, comprising a one-way diode, a solar maximum power tracking system, a voltage stabilizing chip and so on, under the low illumination for automatic control of battery charging, storage battery, high capacity lithium battery group, the independent system integrated solar energy unmanned plane up, it can greatly increase without process of the machine, and the solar energy unmanned machine volume, at the same time, can be without other accessorial function human machine of long time provide power, the solar energy unmanned machine is suitable for a multi-application field.
NOVELTY - The module has a front transparent substrate layer (a), a first transparent conductive oxide (TCO) layer (b) and a thin film photoelectric conversion layer (c) that are fixed together along vertical direction. A second TCO layer (d) and a back transparent substrate layer (f) are arranged in a first etching region (1). The first etching region is provided with the thin film photoelectric conversion layer. A second etching region (2) is located on the first etching region and a third etching region (3). The three regions are located in a dead zone (g).    USE - Multi-color light-transmitting film solar battery module.    ADVANTAGE - The module has high conversion efficiency and aesthetic appearance.    DETAILED DESCRIPTION - The thin film photoelectric conversion layer is selected from single-junction amorphous silicon thin film battery layer, amorphous silicon/amorphous silicon thin film battery double layer, amorphous silicon/amorphous silicon germanium thin film battery double-layer, the amorphous silicon/microcrystalline silicon thin film battery double-layer, amorphous silicon/amorphous germanium silicon/microcrystalline silicon thin film battery layer, three-junction indium gallium selenium battery layer or cadmium telluride battery layer. The front transparent substrate layer and the back transparent substrate layer are toughened glass layer. An INDEPENDENT CLAIM is also included for a multi-color light-transmitting film solar battery module manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a multi-color light-transmitting film solar battery module.    Front transparent substrate layer (a)    TCO layers (b, d)    Thin film photoelectric conversion layer (c)    Back transparent substrate layer (f)    Dead zone (g)    Etching regions (1-3)
NOVELTY - The method involves selecting a silicon wafer on a surface of a silicon sheet, where the silicon wafer is put into a quartz boat for loading the silicon wafer in a propulsion tube. A diffusion furnace is doped with phosphorus. A phosphoro-silicate glass is removed from a silicon chip. The diffusion furnace is pushed into a flower basket and discharged by using hydrofluoric acid cleaning process. The silicon sheet is cleaned by using the silicon wafer. Diffusion light is doped with the phosphorus, where temperature of the diffusion furnace is 880-920 degrees Celsius.    USE - P-type double-sided silicon solar battery electric property improving method.    ADVANTAGE - The method enables realizing impurity of the phosphorus and gettering effect of the silicon wafer and greatly improving service life of the silicon chip and converting efficiency of a solar battery.
NOVELTY - The process involves removing a machinery damage layer of a silicon sheet surface by using a sodium hydroxide concentration. Nano-silver granule solution is deposited on a silicon sheet. Mixed solution is deposited on a silicon chip of nano-silver particle, which is formed with a hole. A silicon chip hole residual is removed by nitric acid solution. A silicon sheet oxide layer is removed by a hydrogen fluoride solution, where the nitric acid solution is heated in the range of 6 to 100 degrees Celsius. Concentration of silver nitrate solution is 0.001% to 0.003%.    USE - Crystalline silicon solar battery surface texturing process.    ADVANTAGE - The process enables reducing reflection loss, and improving the battery conversion efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a crystalline silicon solar battery surface texturing process.'(Drawing includes non-English language text)'
NOVELTY - The method involves forming an N-1-P layer between front and back sides of a transparent conductive oxide (TCO) layer to form a triangular-shaped structure. The TCO layer is formed as an aluminum layer and an indium tin oxide layer. Wavelength of a one-dimensional (1D) grating texture part is about 200 to 500 nm.    USE - Light-absorption reinforcing thin film silicon solar battery texture transverse staggering method.    ADVANTAGE - The method enables performing silicon thin film solar battery light absorption process between front and back sides of the grating texture part to increase a total light absorption rate. The method enables providing a silicon thin film solar battery with transverse displacement effect so as to improve working efficiency of the silicon thin film solar battery of about 7.9 to 17.8%.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a light-absorption reinforcing thin film silicon solar battery texture transverse staggering method.
NOVELTY - The copper (Cu)-aluminum (Al) transition plate has a Cu end plate (1) connected to Al end plate (2) by a heat-shrinkable or cold-shrinkable anti-corrosion tube (3). The Cu and Al end plates are connected with a strip-shaped Al plate (5) using bolts (6) inserted in the connecting holes (4) formed in the Cu and Al end plates. An insulating layer (7) is formed on the Cu end plate and the anti-corrosion tube. The thickness of portion of insulating layer on the Cu end plate is same as the thickness of portion of insulating layer on the anti-corrosion tube.    USE - Copper (Cu)-aluminum (Al) transition plate for solar panel. Can also be used in power plant and transformer substation.    ADVANTAGE - The transition plate has long service life by avoiding electrochemical corrosion and preventing fatigue fracture.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of the structure of the Cu-Al transition plate.    Cu end plate (1)    Al end plate (2)    Anti-corrosion tube (3)    Connecting hole (4)    Strip-shaped Al plate (5)    Bolt (6)    Insulating layer (7)
NOVELTY - The composition is provided with boron trifluoride monoethylamine complex and 1-butyl-3-methylimidazolium hexafluoro phosphate. The composition contains a solvent. The sum total content rate of the component is 30-80 mass percent. The steam pressure in 25 degreeCelcius containing the solvent that is less than a certain value.    USE - Composition for removing an inorganic thin film, interlayer insulation film, a passivation film and an anti-reflective film consisting of silicon nitrides and silicon oxide. Can also be used for the manufacturing process of a semiconductor element and a solar cell.    ADVANTAGE - The composition is provided with boron trifluoride monoethylamine complex and 1-butyl-3-methylimidazolium hexafluoro phosphate, and thus improves the conversion efficiency of the solar cell, and enables to remove the inorganic thin film at low temperature.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for removing a silicon nitride film by using a composition.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of an etching process of a silicon wafer.
NOVELTY - The removal method involves coating an etching material containing boron compound selected from a salt of the Lewis acid that contains a halogen coupled with the boron. The Lewis acid is generated by the compound on a silicon nitride (SiN) film by a printing process. The SiN film is removed by heating. The boron compound is liquefied at the heating temperature and is dissolves in a liquid substance with the heating temperature. The printing process is plate printing. The SiN film is formed on the silicon film or the silicon oxide film on the silicon substrate or the silicon-oxide substrate.    USE - Method for removing an inorganic thin film, such as a silicon nitride film and a silicon oxide film used for a manufacturing process of a semiconductor element or a solar cell.    ADVANTAGE - The removal method involves coating an etching material containing boron compound selected from a salt of the Lewis acid that contains a halogen coupled with the boron, and thus utilizes new etching material, and removes the inorganic thin film at low temperature.
NOVELTY - A laminated film comprises transparent conductive layer which is laminated on one side of transparent film base material (21), and hard-coat layer (24) and reflection prevention layer (23) which are laminated on other side of transparent film base material and which have light transmittance and electroconductivity. Reflection prevention layer is a transparent resin layer whose refractive index is below predetermined setting value.    USE - Laminated film for organic type solar cell (claimed), liquid crystal element, electroluminescence device, touchscreen element and solar cell element.    ADVANTAGE - Adhesiveness of transparent film base material and reflection prevention layer is improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an organic type solar cell comprising laminated film.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the schematic structure of the transparent electrode.    Transparent electrode (20)    Transparent film base material (21)    Transparent electrode layer (22)    Reflection prevention layer (23)    Hard-coat layer (24)    Photoelectric converting layer (40)
NOVELTY - A glass substrate having thickness less than 2 mm is prepared for carrying out physical reinforcement. The process gas containing hydrogen fluoride (HF) gas is contacted with surface of the chemically strengthened glass substrate, to obtain reflection preventing glass.    USE - Manufacture of reflection preventing glass. Uses include but are not limited to building material glass, motor vehicle glass, display glass, optical element, solar cell glass, show window glass, optical glass and spectacle lens.    ADVANTAGE - The method enables safe manufacture of reflection preventing glass having excellent strength and reduced weight.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of manufacture of reflection preventing glass. (Drawing includes non-English language text)    Preparation of glass substrate (S110)    Contacting process gas (S120)
NOVELTY - A gas containing trifluoroacetic acid is contacted on surface(s) of a glass ribbon, to obtain surface-treated glass substrate.    USE - Manufacture of surface-treated glass substrate. Uses include but are not limited to building material glass, motor vehicle glass, display glass, optical element, solar cell glass, show window glass, optical glass and spectacle lens.    ADVANTAGE - The method enables efficient and safe manufacture of surface-treated glass substrate having reduced size, with reduced explosion and fire breakout.
NOVELTY - The hydrogen generator (10) has reaction chamber which includes fuel with hydrogen containing material for releasing hydrogen gas, when fuel is heated. The outlet (14) of reaction chamber is provided for removal of hydrogen gas. A biasing portion (60) is positioned to maintain the constant contact between fuel and heating element (50) and retainer (40). The retainer is bisected with reaction chamber, so that biasing portion and fuel are provided on opposite sides of retainer. The biasing portion, heating element and retainer are provided within reaction chamber.    USE - Hydrogen generator for fuel cell, used in fuel cell system.    ADVANTAGE - The total amount of energy supplied to the initiator can be reduced during use of the hydrogen generator. The removal of hot cartridges can be prevented. The damage occurred to the hydrogen consuming apparatus can be avoided. The reaction efficiency of the hydrogen generator can be improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the hydrogen generator.    Hydrogen generator (10)    Outlet (14)    Retainer (40)    Heating element (50)    Biasing portion (60)
NOVELTY - Porous organosilica nanoparticles having a Brunauer-Emmett-Teller surface area of at least 400 m2/g and/or a pore volume of at least 0.7 cm3/g, is claimed, where the nanoparticles have a mean pore diameter of 1-50 nm, a mean diameter of 1-100 nm and the pores of the nanoparticles are randomly oriented.    USE - The porous organosilica nanoparticles is useful in coating: optical element, ophthalmic element, solar cell, window, glass panel or low-k dielectric; and a display panel (all claimed).    ADVANTAGE - The porous organosilica nanoparticles exhibit a refractive index of less than 1.16, a pore volume of greater than 50% of the volume of the particle, and a density of less than 3 g/cm3 (claimed).    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a solution or dispersion for forming a coating, where the solution or dispersion comprising a solvent and many porous organosilica nanoparticles;    (2) a coating comprising the porous organosilica nanoparticles and a binder;    (3) combination comprising coating and a substrate; and    (4) preparing porous organosilica nanoparticles comprising mixing a bis and/or tris silane with an organic templating agent, a surfactant and a base in order to form porous silica nanoparticles.
NOVELTY - A chalcopyrite compound film is formed on a substrate, and the formed film is annealed in gas atmosphere containing sulfur under pressurized condition, to obtain semiconductor film.    USE - Manufacture of semiconductor film used in solar cell (claimed).    ADVANTAGE - The method produces semiconductor film with favorable forbidden band width and having Z atom defects repaired without using highly toxic gases.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for chalcopyrite compound.    DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart of the treatment process of chalcopyrite thin film. (Drawing includes non-English language text)    Copper-indium-selenide film forming step (14)    Crystallization process (15)    Copper-indium-selenide film introduction process (16)    Nitrogen gas introduction process (17)    Hydrogen gas introduction process (18)
NOVELTY - The apparatus (100) has holders (106A-106J) that are positioned along periphery of winding table. A upper guide holding unit (130X) is provided to bundle the fiber drawn out from first bobbin group (108A-108J)consisting of bobbins among the bobbins attached to support units respectively, and supply the bundled fiber to mandrel. A lower guide holding unit is provided to bundle the fiber drawn out from second bobbin group consisting of bobbins not belonging to the first bobbin group, and supply the bundled fiber to mandrel.    USE - Hoop volume apparatus used in filament winding apparatus for manufacturing tank (all claimed) such as high pressure gas tank of fuel cell vehicle. Can also be used in arbitrary apparatus for winding fiber around the propeller shaft used by vehicle, aircraft, and door-frame.    ADVANTAGE - Since the guide holding units are provided to bundle the fiber drawn out from bobbin groups, and supply the bundled fiber to mandrel, respectively, the hoop winding of the fiber drawn out from many bobbins can be performed simultaneously in efficient manner. Hence, the productivity of filament winding apparatus can be improved, productivity in manufacture of the tank can be improved, and the performance and the look of completion products can be maintained excellently. The structure of hoop volume apparatus can be simplified efficiently.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of tank.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the hoop volume apparatus.    Hoop volume apparatus (100)    Holders (106A-106J)    Bobbins (108A-108J)    First guide holding unit (130X)    Second guide holding unit (130Y)
NOVELTY - The conductor has a transparent support material (1), first admittance adjusting layer (2), transparent metal film (3) and second admittance adjusting layer (4) that are stacked in sequential order. The thickness of the transparent metal film is less than or equal to 15 nm. The average absorption factor of transparent conductor is less than or equal to 15 % and maximum value of absorption factor is less than or equal to 25 %. The optical admittance of light containing wavelength of 570 nm at the interface joining the two admittance adjusting layers and the transparent metal film is represented by specific formula.    USE - Transparent conductor used for panel of display element such as electrostatic capacitive type touchscreen, organic electroluminescent element and solar cell. Can also be used in inorganic electroluminescent element, liquid crystal element, plasma display element, electroluminescent light control element, field emission display element, mobile telephone and electronic paper.    ADVANTAGE - The optical admittance of light containing specific wavelength at the interface joining the two admittance adjusting layers and the transparent metal film is represented by specific formula, thus the surface electrical resistance value of the transparent conductor can be reduced and the transparency of the transparent conductor can be increased. The reflection of the light on the surface of the transparent conductor can be suppressed.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the laminated constitution of the transparent conductor.    Transparent support material (1)    Admittance adjusting layers (2,4)    Transparent metal film (3)
NOVELTY - We report a precursor structure of CIGS to resolve the problem of overly higher roughness of Cu(In,Ga)Se2 (CIGS) forming in the CIGS absorber layer caused by sputtering and the inhomogeneous distribution of elemental Ga during selenization in the same time period. Results demonstrate that the proposed precursor structure of CIGS is superior to conventional sputtering structure for its ability to reduce surface roughness in the CIGS absorber layer following a two-stage selenized annealing process and resolves inhomogeneous distribution elemental Ga in CIGS cells. Using experimental analysis, we explored the mechanism underlying the increase in grain size in the CIGS absorber layer.
NOVELTY - The method involves implanting p-type dopants (203) into a substrate e.g. wafer, via blanket ion implantation process. N-type dopants are implanted into the substrate via the blanket ion implantation process. First annealing process is performed to form a p-type region and second annealing process i.e. blanket annealing process, is performed to form an n-type region, where the p-type region and the n-type region are proximate to each other. A dielectric layer is formed on a surface of the substrate after performing the first annealing process and before implanting n-type dopants.    USE - Method for forming a solar cell i.e. interdigitated back contact (IBC) solar cell, using ion implantation process. Can also be used for an integrated circuit device.    ADVANTAGE - The method enables performing the first annealing process to form the p-type region and the second annealing process to form the n-type region and forming the solar cell in a cost-effective and quick manner.    DETAILED DESCRIPTION - The first annealing process is selective annealing process. The p-type dopant is selected from a group consisting of boron, aluminum, gallium, indium and thallium.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a structure illustrating a method for manufacturing an IBC solar cell.    N-type base of solar cell (102)    Implanting p-type dopants (203)    Implanted region (204)
NOVELTY - A catalyst is a monolith catalyst laminated on a support. The support has monolithic structure and is metal foam or metal net.    USE - Catalyst is used for fuel cell autothermal reforming reaction.
NOVELTY - A nanocrystal comprises: a core comprising a Group III element and a Group V element; and monolayer shell disposed on a surface of the core, where the shell comprises compound containing zinc, selenium and sulfur atom, and where an average mole ratio of Selenium:Sulfur in the monolayer shell is 2:1-20:1.    USE - In light emitting device (selected from display, sensor, photodetector, solar cell, hybrid composite, or bio-labeling device (all claimed).    ADVANTAGE - The nanocrystals have excellent light emitting properties and stability; improved luminescence efficiency, and full width at half maximum; has higher quantum efficiency and higher color purity. The nanocrystals are prepared by highly reproducible method.    DETAILED DESCRIPTION - A nanocrystal comprises: a core comprising a Group III element and a Group V element; and monolayer shell disposed on a surface of the core, where the shell comprises a compound of the formula ZnSexS(1-x) (I), and where an average mole ratio of Se:S in the monolayer shell is 2:1-20:1.    x=0 or 1.    An INDEPENDENT CLAIM is included for preparing the nanocrystal comprising a core comprising a Group III element and a Group V element, and a monolayer shell formed on a surface of the core involving: providing a nanocrystal core comprising a Group III element and a Group V element, and contacting the nanocrystal core with a precursor of Zn, Se, and S to form a monolayer shell on a surface of the nanocrystal core and prepare the nanocrystal, where the precursor of Zn, Se, and S is present in an amount such that an average mole ratio of Se:S in the monolayer shell is 2:1-20:1.
NOVELTY - The apparatus (10) has an elongate shaft (16) i.e. telescoping cylinder, received into a parison. First and second ends (12, 14) of the elongate shaft respectively and removably receive two container penetration elements (34, 38) e.g. seal, for forming fluid-tight connection between the first and second ends of the elongate shaft. Diameter of the first end of the elongate shaft is less than diameter of the second end of the elongate shaft. The fluid-tight connection is selected from one of threaded connection, dovetail interlock connection, ball and detent connection and lock bar connection.    USE - Positioning apparatus i.e. telescoping apparatus, for blow molding a hollow liner of a container that is utilized for containing fluids such as compressed natural gas (CNG) and hydrogen gas utilized in a fuel cell.    ADVANTAGE - The apparatus is formed as a unitary structure and telescoping apparatus, so that time and space required for use of the positioning apparatus and manufacture of a hollow liner of a container can be minimized. The apparatus is provided with threads i.e. coarse threads, so as to facilitate high turn rate, thus reducing time expended to secure the container penetration elements to the positioning apparatus and remove the container penetration elements. The apparatus is formed with apertures with uniform size and shape that are uniformly spaced apart so as to facilitate proper inflation of the hollow liner of the container.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a positioning apparatus including two container penetration elements.    Positioning apparatus for blow molding a liner of a container (10)    Ends of an elongate shaft (12, 14)    Elongate shaft (16)    Container penetration elements (34, 38)    Apertures (42)
NOVELTY - The method involves providing a conductive layer with an electrically conductive component formed as a linear metal structure in a single side of base material such that ratio of standard deviation with respect to an average value of a surface-resistance value of width direction is 0.1 or less and an average value of opening area of a network is 5 micrometer or more and 100 micrometer or less. Roll-to roll pressing process is performed in the base material at press temperature about 100 degrees Celsius. Polymer matrix (6) is included in the conductive layer.    USE - Method for manufacturing an electrically conductive laminated body for a display body i.e. LCD body, of a touchscreen on an electronic paper (all claimed). Can also be used for a solar cell body and an organic electroluminescence body.    ADVANTAGE - The method enables providing the conductive layer with excellent electroconductivity property by making the electrically conductive component into the linear metal structure, which has network structure with high electro-conductivity, so that the electrically conductive laminated body with high transparency and a low surface-resistance value can be obtained.    DETAILED DESCRIPTION - The linear metal structure is a single-fibrous conductor (2), nanowire (4) and an acicular conductor like whisker (5). INDEPENDENT CLAIMS are also included for the following:    (1) a display body    (2) a touchscreen    (3) an electronic paper.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a linear metal structure used for an electrically conductive laminated body.    Electrically conductive surface (1)    Single-fibrous conductor (2)    Nanowire (4)    Acicular conductor like whisker (5)    Polymer matrix (6)    Contact formed by overlap of fibrous conductor (7)
NOVELTY - A semiconductor crystal growth container (1) comprises thin-tube part (2) which installs seed crystal, crystallization increase part (3) which increases seed crystal in surface inside perpendicular to the crystal growth axial direction and crystal growth axial direction, and crystal growth part (4) which is a straight body part which makes crystal increased in crystal increase part grow to crystal growth axial direction.    USE - Semiconductor crystal growth container for making semiconductor crystal used for solar cell (claimed).    ADVANTAGE - Wafer utilization factor is high and transition and production of twin crystal is suppressed.    DETAILED DESCRIPTION - A semiconductor crystal growth container comprises thin-tube part which installs seed crystal, crystallization increase part which increases seed crystal in surface inside perpendicular to the crystal growth axial direction and crystal growth axial direction, and crystal growth part which is a straight body part which makes crystal increased in crystal increase part grow to crystal growth axial direction. Cross-sectional shape orthogonal to crystal growth axial direction of crystallization increase part and crystal growth part is quadrangle. Inner-wall angle of crystallization increase part is 35.3 degrees with respect to crystal growth axial direction. An INDEPENDENT CLAIM is included for a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the semiconductor crystal growth container.    Crystal growth container (1)    Thin-tube part (2)    Crystallization increase part (3)    Crystal growth part (4)
NOVELTY - An adhesive agent comprises polyisocyanate component and polyol component. The polyol component contains polyol (a) having polycarbonate skeleton, and monool obtained by reacting polyol having carbonate and monoisocyanate.    USE - Adhesive agent is used for lamination of outdoor-type composite sheet (claimed). Uses include but are not limited to raincoat, umbrella, hood-cover, tarpaulin, cover sheet for motor vehicles, cover sheet for construction, sheet for verandas, tent, solar cell back sheet, leisure sheet, etc.    ADVANTAGE - The adhesive agent has excellent initial stage adhesive strength, and provides lamination with excellent durability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of adhesive agent, which involves preparing polyurethane polyol by reacting hydroxyl group of the polycarbonate polyol and isocyanate group of polyisocyanate component, in a equivalence ratio of 1 or more, and obtaining polyol component by reacting hydroxyl group of the polyurethane polyol and isocyanate group of monoisocyanate, in the equivalence ratio of 1 or more.
NOVELTY - A hot-rolled sheet comprising chemical composition is annealed at 750-950 degrees C for more than 30 minutes. The hot-rolled steel sheet is cold rolled. An intermediate annealing of cold-rolled sheet is carried out for 5 minutes at 950-1100 degrees C and cold rolled for more than 10 seconds, to obtain average grain size of 80-200 mu m. The intermediate-annealing steel plate is cold rolled with cold rolling-reduction ratio of 55-75%, to obtain board having thickness of 0.30 mm or less, and to obtain non-oriented electromagnetic steel sheet having average grain size of 60-150 mu m.    USE - Manufacture of non-oriented electromagnetic steel sheet used as raw material of drive motor and fuel cell in electric vehicle.    ADVANTAGE - The method enables efficient manufacture of non-oriented electromagnetic steel sheet having excellent magnetic flux density, and output characteristics, with reduced iron loss.    DETAILED DESCRIPTION - A hot-rolled sheet comprising chemical composition containing 1.5-3.5 %mass silicon, 0.1-2.5 %mass aluminum, 0.08-2.5 %mass manganese, 0.06-0.2 %mass phosphorus, 0.005 %mass or less carbon, 0.005 %mass or less nitrogen 0.0020-0.006 %mass sulfur, and remaining of iron, is annealed at 750-950 degrees C for more than 30 minutes. The hot-rolled steel sheet is cold rolled. An intermediate annealing of cold-rolled sheet is carried out for 5 minutes at 950-1100 degrees C and cold rolled for more than 10 seconds, to obtain average grain size of 80-200 mu m. The intermediate-annealing steel plate is cold rolled with cold rolling-reduction ratio of 55-75%, to obtain board having thickness of 0.30 mm or less, and to obtain non-oriented electromagnetic steel sheet having average grain size of 60-150 mu m and satisfies following relation: Si+2x sol.Al-Mn greater than or equal to 2, where Si, sol.Al, and Mn are mass content of each element.
NOVELTY - The system has six power main supplies that are connected with six groups of silicon bar (2) connected to high pressure side winding of three-phase six-winding transformer (5) connected to three-phase power supply. The medium voltage side winding and low voltage side winding of three-phase six-winding transformer are connected to different main power supplies (3). The three groups of silicon rod are electrically connected by switch. A control cabinet (6) is connected to high voltage starting power supply (1), high pressure maintaining power supply (4) and main power supply.    USE - Power supply system for polysilicon reducing furnace for forming polycrystalline silicon used for manufacturing solar battery, and electronic product formation industry.    ADVANTAGE - The floor area of the power supply system can be reduced. The installation cost of the power supply system can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for starting power supply system for polysilicon reducing furnace.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the power supply system for polysilicon reducing furnace.    High voltage starting power supply (1)    Silicon bar (2)    Main power supply (3)    High pressure maintaining power supply (4)    Three-phase six-winding transformer (5)    Control cabinet (6)
NOVELTY - A conjugated oligomer comprises at least 3 conjugated monomers, and is terminated with at least one tris(trialkylsilyl)silyl group.    USE - Conjugated oligomer is used for fluorescent marker, field effect transistor device, light emitting transistor device, organic solar cell and blue light emitting diode (all claimed). Uses include but are not limited to battery, sensor and electroluminescent material.    ADVANTAGE - The conjugated oligomer is thermally stable and has high fluorescence quantum yield, excellent antistatic property, solubility and processability, and provides transistor device with high mobility and low bulk density, and battery with excellent cycle characteristics.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of hypersilylated conjugated oligomer of formula (I), which involves reacting bromine-containing compound of formula (II) and tributyl tin-containing structure of formula (III) with tetrakis(triphenylphosphine)palladium(0).    A1-An=aryl or bond;    L1-Ln+1=bond, or linear or branched 2-20C alkenyl or linear or branched 2-20C alkynyl (both optionally substituted by heteroatom);    n=3 or more;    M=Si(Si(Alk)3)3;    L=1 or more;and    Alk=alkyl.
NOVELTY - An electronic component has two substrates (1, 2), either of which is transparent, organic component (3) positioned between substrates, and junction portion (6) provided in outer peripheral portion of substrates. The junction portion comprises low melting glass (4) containing vanadium oxide and filler particles (5) containing low heat-expansion material. An oxide uses bivalent transition metal as constituent element, and has structure distributed in low heat-expansion material. The thermal expansion coefficient of low heat-expansion material at 30-250 degrees c is 5x 10-7/ degrees C or less.    USE - Electronic component e.g. organic solar cell and lighting fixture.    ADVANTAGE - The electronic component has reliable junction portion with joining layer having excellent adhesiveness, gas-barrier property, moisture resistance and water resistance, and is manufactured by a simple method. The heating of filler particles by irradiation of laser is enabled.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) filler particles;    (2) sealing material paste; and    (3) manufacture of electronic component.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the junction portion, and upper side of the electronic component.    Substrates (1, 2)    Organic component (3)    Low melting glass (4)    Filler particles (5)    Junction portion (6)
NOVELTY - An anthracene derivative (I) is new.    USE - New anthracene derivative is used as intermediate for preparing compound for composition for forming hardened material for fluorescence element (all claimed). Uses include but are not limited to recording material, optical material, coating materials, lens, optical sheet, hologram recording material, organic photoreceptor, photoresist material, anti-reflective film, semiconductor sealing material, molecule magnetic memory, organic solar cell, organic electroluminescent element, liquid crystal display element, pharmaceutical intermediate component and dye intermediate.    ADVANTAGE - The new anthracene derivative has high heat resistance and refractive index. The compound obtained using anthracene derivative as intermediate compound, has high versatility, carbon density, melting point, refractive index, and excellent fluorescence ability.    DETAILED DESCRIPTION - An anthracene derivative of formula (I) is new.    X=residue of indole;and    Y'=residue of indole or hydroxy.    INDEPENDENT CLAIMS are included for the following:    (1) compound (a), which is obtained using anthracene derivative (I) as intermediate;    (2) composition, which contains anthracene derivative (I) or compound (a);    (3) hardened material, which is obtained by hardening the composition;    (4) fluorescence element, which has hardened material; and    (5) manufacture of anthracene derivative (I).
NOVELTY - A heterojunction solar cell consists of a n-type emitter region containing gallium indium phosphide and having thickness of 10-100 nm, a n-type window layer containing aluminum indium phosphide or aluminum gallium indium phosphide and having thickness of 10-50 nm and delta -doping layer with doping density of 1011-1013 cm2, between emitter region and window layer.    USE - Heterojunction solar cell (claimed).
NOVELTY - Preparation of absorbing layer containing copper-zinc-tin sulfide selenide involves spin-coating clear precursor solution prepared using copper salt, zinc salt and tin salt, primary solvent chosen from ethanol, methanol, isopropyl alcohol and acid, and secondary solvent containing ethylene glycol and propylene glycol, such that concentration of copper element is 0.83-83 mmol/L and concentration of tin element is 0.42-42 mmol/L, on substrate to form oxide film, and performing sulfide-and-selenide annealing under inert gas atmosphere.    USE - Preparation of absorbing layer used for solar battery.    DETAILED DESCRIPTION - Preparation of absorbing layer containing copper-zinc-tin sulfide selenide (Cu2ZnSn(S,Se)4) involves preparing clear precursor solution using copper salt, zinc salt and tin salt, primary solvent chosen from ethanol, methanol, isopropyl alcohol and acid, and secondary solvent containing ethylene glycol and propylene glycol, such that concentration of copper element is 0.83-83 mmol/L and concentration of tin element is 0.42-42 mmol/L, spin-coating the precursor solution on substrate at 200-450 degrees C for 5-20 times to form oxide film, and performing sulfide-and-selenide annealing at 450-580 degrees C under inert gas atmosphere. The volume ratio of primary solvent and secondary solvent is 5:(0.1-10).
NOVELTY - A polyoxometalate and hemicyanine derivative mixture assembled inorganic/organic hybrid film comprises polyoxometalate and a hemicyanine derivative comprising (?)-1,1'-(1,3-propyl)-bis(4-((?)-2-(4-(dimethylamino)1-naphthalenyl)ethenyl)pyridine) bromide and (?)-1,1'-methylene-bis(4-(4-(dimethylamino) styryl) pyridine) bromide at a molar ratio of 1:1, 1:2 or 2:1.    USE - Polyoxometalate and hemicyanine derivative mixture assembled inorganic/organic hybrid film for use in photoelectrochemical cell (claimed) and solar battery.    ADVANTAGE - The film has wide application prospect.    DETAILED DESCRIPTION - A polyoxometalate and hemicyanine derivative mixture assembled inorganic/organic hybrid film comprises polyoxometalate (K5(BW12O40)) and hemicyanine derivative comprising (?)-1,1'-(1,3-propyl)-bis(4-((?)-2-(4-(dimethylamino)1-naphthalenyl)ethenyl)pyridine) bromide and (?)-1,1'-methylene-bis(4-(4-(dimethylamino) styryl) pyridine) bromide at a molar ratio of 1:1, 1:2 or 2:1.
NOVELTY - Preparation of anode material involves dispersing barium salt having particle size of 50-400 nm, gadolinium-doped ceria having particle size of 50-300 nm and nickel having particle size of 1-5 mu m for 5-30 minutes, performing ultrasonic dispersion, adding gadolinium-doped ceria and nickel to blender, stirring for 15-30 minutes, mixing in high-speed machine and calcining in air.    USE - Preparation of anode material used for solid oxide fuel cell.    ADVANTAGE - The method efficiently enables manufacture of anode material having excellent electro-catalysis property, corrosion resistance and non-flammable property by suppressed generation of waste.
NOVELTY - A zinc sulfide nano-crystalline thin film preparing method involves selecting base raw materials for preparing solution, heating under water bath, stirring, where the base solution is zinc sulfate and ammonium sulfate, followed by controlling temperature of the solution at 60-90 degrees C, adding 0.5-3.0 mol/l ammonia water and 0.1-0.5 mol/l thiourea in mixed solution, inserting substrate vertically into the mixed solution, adding triethanolamine to depositing zinc sulfide thin film, performing zinc sulfide thin film deposition on the substrate and removing and cleaning the substrate.    USE - Method for preparing zinc sulfide nano-crystalline thin film that is utilized for preparing solar cell (claimed).    ADVANTAGE - The method enables preparing zinc sulfide nano-crystalline thin film with high compactness and uniformity.    DETAILED DESCRIPTION - A zinc sulfide nano-crystalline thin film preparing method involves selecting base raw materials for preparing solution, heating under water bath, stirring, where the base solution is zinc sulfate with concentration of 0.01-0.2 mol/l and ammonium sulfate with concentration of 0.01-0.1 mol/l, followed by controlling temperature of the solution at 60-90 degrees C, adding 0.5-3.0 mol/l ammonia water and 0.1-0.5 mol/l thiourea in mixed solution, inserting substrate vertically into the mixed solution, adding triethanolamine to depositing zinc sulfide thin film, performing zinc sulfide thin film deposition on the substrate and removing and cleaning the substrate.
NOVELTY - 2,1,3-Benzothiadiazole-based thiophene-conjugated polymer derivative (I) is new.    USE - 2,1,3-Benzothiadiazole-based thiophene-conjugated polymer derivative (I) used in organic solar cell (claimed).    ADVANTAGE - The 2,1,3-benzothiadiazole-based thiophene-conjugated polymer derivative (I) has improved solubility, chemical stability and thermal stability.    DETAILED DESCRIPTION - 2,1,3-Benzothiadiazole-based thiophene-conjugated polymer derivative of formula (I) is new.    n=2-35;    Ar=group of formulae (II-VI); and    R1 and R2=H, substituted or unsubstituted 1-20C-alkyl group.    An INDEPENDENT CLAIM is included for method for preparing 2,1,3-Benzothiadiazole-based thiophene-conjugated polymer derivative (I).
NOVELTY - A composite material comprises carbon fiber which is contained in aromatic polyimide with which aromatic compound is directly connected with imide bond.    USE - A composite material used as heat insulating material, frame and panel used for satellite (all claimed).    ADVANTAGE - Heat insulating material of low thermal conductivity is easily arranged to part more to be heat-retained.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) frame comprising composite material which is inserted by pair of substrate which consists of fiber reinforced resin; and    (2) panel comprising frame and solar cell which is fixed to one side of frame.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph of the measurement result of heat conductivity of sample heat insulating material. (Drawing includes non-English language text).
NOVELTY - Producing a dehydrogenation catalyst, comprises impregnating an alumina layer of an alumina carrier with a platinum solution containing hexahydroxo platinate(IV) ions with an immersion method and calcining the alumina carrier subjected to the immersion step to provide a dehydrogenation catalyst. The alumina carrier has the alumina layer formed by anodic oxidation on at least a part of the surface of an aluminum support.    USE - The method is useful for producing dehydrogenation catalyst (claimed), which is useful for generating hydrogen and aromatic compounds (for fuel cells of automobiles) from cyclic hydrocarbons, such as cyclohexane and methylcyclohexane.    ADVANTAGE - The method rapidly produces dehydrogenation catalyst with improved reaction efficiency and high catalyst activity for a long period.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a dehydrogenation catalyst in which platinum is supported on an alumina carrier having an alumina layer formed by anodic oxidation on at least a part of the surface of an aluminum support, where the alumina layer is divided equally into three parts in the layer thickness direction and the parts are designated as a first region, a second region and a third region in order from the outside, and the mass ratio of platinum atoms to aluminum atoms in the first region C1, the mass ratio of platinum atoms to aluminum atoms in the second region C2 and the mass ratio of platinum atoms to aluminum atoms in the third region C3 is greater than C1-C2 and greater than C1-C3.
NOVELTY - The apparatus has a transfer substrate (150), which is arranged at the lower portion of a silicone melt sprue (140). The silicone melt sprue has an outlet (142), which is provided with a silicone molten metal. The silicon melting unit is formed with the silicone molten metal. The silicone melt sprue has a discharging extension unit, which is extended to the lower portion of the outlet. A heating portion is provided for surrounding the exterior wall of the silicone melt sprue. The heating portion controls the solidification rate of the silicone molten metal.    USE - Apparatus for manufacturing a silicon substrate for a solar cell.    ADVANTAGE - The transfer substrate is arranged at the lower portion of a silicone melt sprue and the silicone melt sprue has an outlet, which is provided with a silicone molten metal, thus minimizes the silicon substrate surface roughness, easily made of the silicon substrate of the thin plate space, improves the energy conversion efficiency of the silicon substrate, and also minimizes the load, according to the transfer in the silicon melt transfer.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a silicone melt sprue of the silicon substrate manufacturing apparatus.    Silicone melt sprue (140)    Lower side silicone melt sprue (141)    Outlet (142)    Transfer substrate (150)    Thin plate formation unit (160)
NOVELTY - Coating solution obtainable by: (a) dissolving at least one metal or metal compound comprising a group 11 metal, a group 12 metal, a group 13 metal, a group 14 metal, a group 11 metal compound, a group 12 metal compound, a group 13 metal compound and a group 14 metal compound in a solvent to obtain a metal complex solution; and (b) adding 0.1-50 vol.% of an alcohol having 1-5C to the metal complex solution, is claimed.    USE - The coating solution is useful for forming a light-absorbing layer of a solar cell (claimed) such as copper zinc tin sulfur and selenium solar cell.    ADVANTAGE - The coating solution: exhibits improved affinity for the back electrode and remedy agglomeration that occurs after coating and before baking; enables production of a uniform light-absorbing layer; exhibits improved storage stability; does not contain hydrazine and the chemical properties (explosiveness) of hydrazine in the formation of a light-absorbing layer would not be of any problems, thus improving the safety of the production process; and provides light-absorbing layer with improved film quality.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for forming the coating solution, comprising the steps (a) and (b) as above per se.
NOVELTY - Making a sputtering target, comprises providing a backing structure (70), and forming a copper indium gallium sputtering target material (30) on the backing structure by spray forming, where: 0-10% of primary phase regions in the sputtering target material have a size of greater than 30 mu m in any random 1 cm by 1 cm area of the sputtering target; an average primary phase region in the sputtering target material has a size of not greater than 10 mu m; and the sputtering target material has an overall uniform composition.    USE - The method is useful for making sputtering target (claimed), which is useful for manufacturing solar cells.    ADVANTAGE - The method: provides the sputtering target, which is free from structural defects, exhibits high density, low porosity, a composition with a high uniformity and a fine scale microstructure, and provides the solar cells with high efficiency; eliminates the need of extra process steps associated with powder handling, storage, classification and consolidation, hence it is simple and cost effective; and prevents the occurrence of deposit cracking.    DESCRIPTION OF DRAWING(S) - The figure shows a side view of spray forming process and apparatus for forming a sputtering target.    Tundish (4)    Atomizer (14)    Crucible (25)    Sputtering target material (30)    Backing structure (70)
NOVELTY - The light transmissive type solar cell module (10) has a separation area that is formed on a transparent insulated substrate (1). A reflection prevention layer (7) is formed in the surface at a side of a back surface protective layer (8) of a back surface metal-electrode layer (6). The back surface metal-electrode layer contains a silver or an alloy of silver, and the reflection prevention layer contains silver sulfide.    USE - Light transmissive type solar cell module for use as an outer material in boundary of indoor and outdoor and for the power generation.    ADVANTAGE - The light transmissive type solar cell module has a reflection prevention layer that is formed in the surface at a side of a back surface protective layer of a back surface metal-electrode layer, thus reducing the reflection of indoor light, enables to observe an outdoor scene in weak night time of exterior light, providing a lighting unit in an appropriate position at low cost.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method for a light transmissive type solar cell module.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a light transmissive type solar cell module.    Transparent insulated substrate (1)    Back surface metal-electrode layer (6)    Reflection prevention layer (7)    Back surface protective layer (8)    Light transmissive type solar cell module (10)
NOVELTY - The reactor (1) has a coil (2) formed by providing a winding on a magnetic core (3) that penetrates inside the coil and abuts to an end surface of the coil. A frame shape bobbin (4A) ensures insulation between the coil and the magnetic core. A bottomed cylindrical case (6) accommodates an assembly (1A) of the coil and the magnetic core. A handle part (44A) is utilized in a state accommodating the assembly in the case when positioning the assembly to a predetermined position of the case such that the handle part is not hooked in an opening edge part of the case.    USE - Reactor for use in a converter of a power converter device (all claimed) i.e. bidirectional direct current (DC)-DC converter, for a vehicle e.g. hybrid vehicle. Can also be used in an electric vehicle and a fuel cell electric vehicle.    ADVANTAGE - The handle part is utilized in the state accommodating the assembly in the case when positioning the assembly to the predetermined position of the case such that the handle part is not hooked in the opening edge part of the case, so that the handle part can held with a hand or the conveyance tool by providing a bending part easily for assembly operation, thus improving productivity during manufacture. The reactor allows resin containing ceramic filler selected from silicon nitride, alumina, aluminum nitride, boron nitride, mullite and silicon carbide to be used for ensuring insulation between the coil of the assembly and a side wall part, thus improving insulation of the side wall part and heat dissipation performance.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a reactor.    Reactor (1)    Assembly (1A)    Coil (2)    Magnetic core (3)    Frame shape bobbin (4A)    Bottomed cylindrical case (6)    Handle part (44A)
NOVELTY - The controller (1) has a charge/discharge control part (14) setting a discharge object and a charge object for secondary batteries (2a, 2b) and controlling discharge state of the discharge object to an electric equipment (4) and charge condition from a fuel cell (3) to the charge object. A determination unit (11) determines a relative deterioration degree about each of the batteries. A charging/discharging area control unit (16) sets the variation range of charging rate about each battery based on relative deterioration degree determined by the determination unit.    USE - Power controller for controlling charging/discharging state of a secondary battery e.g. lithium ion secondary battery and lithium ion polymer secondary battery, and a fuel cell in a hybrid vehicle.    ADVANTAGE - The charging/discharging area control unit sets the variation range of charging rate about the batteries based on the relative deterioration degree determined by the determination unit, so that usage time and usage frequency of the battery can be changed by setting the variation range of charging rate according to the deterioration degree, thus equalizing deterioration state of the secondary batteries reliably, and hence improving power generating efficiency, without electric power shortage while reducing running cost of a hybrid vehicle.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of a power controller.'(Drawing includes non-English language text)'    Power controller (1)    Secondary batteries (2, 2a, 2b)    Fuel cell (3)    Electric equipment (4)    Determination unit (11)    Charge/discharge control part (14)    Charging/discharging area control unit (16)
NOVELTY - A microporous film stacking-together material comprises sheet(s) of microporous film stacked together, and peeling film adjacent to the microporous film. The peeling strength of microporous film and the peeling film is 0.5-250 g/25mm. The peeling film contains stretching adjuvant.    USE - Microporous film stacking-together material. Uses include but are not limited to lithium ion secondary battery-cell separator, separator of capacitor, and fuel cell material, mobile telephone, electric vehicle, electric motor cycle, and notebook computer.    ADVANTAGE - The microporous film stacking-together material provides separator having excellent cyclic characteristics.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of microporous film stacking-together material, which involves forming laminated material of the precursor sheet of a microporous film, and a peeling film by the coextruding method, and forming microporous film.
NOVELTY - The method involves providing a semiconductor substrate (3). The semiconductor substrate is inserted into a process chamber (1) and an aluminum oxide layer is deposited by plasma enhanced chemical vapor deposition to form plasma in a plasma zone by supplying the aluminum-containing gas. The suction of the gases from the process chamber is enabled during the chemical vapor deposition. The plasma zone is created with respect to the aluminum-containing gas flow between the supply point of the aluminum-containing gas and suction location of the gases in the process chamber.    USE - Method for applying aluminum oxide layer on semiconductor substrate used for electronic component e.g. photovoltaic solar cell.    ADVANTAGE - The transfer rate of the gases can be enabled favorably so that the homogeneity and quality of the aluminum oxide layer can be improved efficiently by attaining the low recombination rate. Thus the efficiency of the semiconductor substrate after application of the aluminum oxide layer can be enhanced and the application cost of the aluminum oxide layer can be reduced effectively.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device for applying aluminum oxide layer on semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the device for applying the aluminum oxide layer on the semiconductor substrate.    Process chamber (1)    Conveying device (2)    Semiconductor substrate (3)    Gas outlet (6)    Oxygen gas supply line (7)
NOVELTY - A plating solution used for preparing platinum-ruthenium proton exchange membrane fuel cell catalyst comprises 0.4-0.6 mol/L alkali metal sulfate, 20-30 mmol/L alkali metal molybdate, 10-15 mmol/L ruthenium chloride and 100-200 mmol/L sulfate of divalent metal ion.    USE - Plating solution used for preparing platinum-ruthenium proton exchange membrane fuel cell catalyst (claimed).    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for application of plating solution comprising putting solution in proton exchange membrane fuel cell under the 0 V, plating at - 0.75 V, forming platinum-ruthenium-divalent metal ion layer at 0.5 degrees C in 1 molar acidic solution, and removing divalent metallic ion layer.
NOVELTY - Manufacture of solar grade silicon involves melting 2-N purity metallic silicon, obtaining (1) molten metal silicon, blowing gas including oxidizing gas, suffocating gas, inert gas, and/or reducible gas on molten metal silicon, and removing impurity having predetermined concentration.    USE - Manufacture of solar grade silicon used for solar cell.    ADVANTAGE - The method enables economical manufacture of solar grade silicon having high purity.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view illustrating manufacture of solar grade silicon. (Drawing includes non-English language text)    Molten silicon preparing process (1)    Induction heating (2)    Nitrogen gas blowing process (3)    Temperature reducing process (4)    Solidification process (5)
NOVELTY - Carbonization of regenerated cellulose film involves clamping a regenerated cellulose film (10) with a sheet (11) comprising natural cellulose fiber having pulp as a main component, using a heat resistant component (13), and baking at high temperature under oxygen interruption atmosphere or low-oxygen atmosphere under pressurized state.    USE - Carbonization of regenerated cellulose film e.g. cellophane film, cotton film, and timber, is uses for forming paper and nonwoven fabric, and used as carbon thin film material for fuel cell. Uses include but are not limited to lithium-ion battery, separator for capacitor, sensor, medical device, packaging material, household container, and indoor and outdoor-type building material.    ADVANTAGE - The method enables carbonization of regenerated cellulose film having high porosity, water permeability, and heat resistance by a simple process with high yield.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for carbonization apparatus, which has a clamp for clamping the regenerated cellulose film, and heater and pressurizer having heating rolls and a heat resistant endless belt, and mechanism driven at speed as mechanism in which the heat resistant endless belt is press-contacted to portion of heating rolls having low circumferential speed at high temperature.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating carbonization of regenerated cellulose film.    Regenerated cellulose film (10)    Sheets (11,12)    Heat resistant components (13,14)
NOVELTY - The solar cell (50) has a semiconductor material (54) i.e. amorphous silicon, having a positive side (72) and a negative side (76). A positive contact (58) is in electrical communication with the positive side, where the positive contact collects current from the positive side. A negative contact (62) is in electrical communication with the negative side, where the negative contact collects current from the negative side. The negative contact includes a coil geometry for coupling with an external interface, where the negative contact provides near field communication.    USE - Solar cell for a portable electronic device (claimed) such as cellular telephone, portable e-mail paging device, camera, portable music player, portable video player, personal digital assistant, portable book reader, portable video game player, tablet computer, netbook computer and laptop computer. Can also be used for a desktop computer.    ADVANTAGE - The solar cell charges an energy storage unit i.e. lithium ion battery, of the portable electronic device, so that service life of the storage unit can be extended and less power consumption from a typical outlet is required to operate the portable electronic device. The negative contact performs an additional function such that fewer components are required in the portable electronic device, so that more compact package of the portable electronic device can be obtained.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a portable electronic device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a solar cell.    Solar cell (50)    Semiconductor material (54)    Positive contact (58)    Negative contact (62)    Positive side (72)    Negative side (76)
NOVELTY - A laminate contains a substrate, and a layer of oxide film, nitride film, oxynitride film or oxycarbide film containing element chosen from among silicon, aluminum, and titanium, formed on the substrate. The layers are exposed to a vacuum UV light generated through plasma formed from a gas containing carbon monoxide, carbon dioxide, and methane, such that to modify portion(s) of the laminate.    USE - Modification method used for modified laminate (claimed). Uses include but are not limited to packaging articles, solar cell, liquid crystal display element and organic electroluminescent element.    ADVANTAGE - The method enables quick modification of laminate having excellent gas-barrier property and productivity.
NOVELTY - The apparatus (1) has a control unit which controls position of holding element (51) which holds the to-be-processed object (W) according to leaning angle of cutting wire (3), so that the to-be-processed object is formed in circular-arc-shape. The to-be-processed object is pressed on cutting wire for cutting the to-be-processed object by fluctuating the wire with wire guide (2) while the cutting wire point-contacts with the to-be-processed object with circular-arc-shape.    USE - Swiveling-type wire saw apparatus for cutting column or rectangular solid shaped to-be-processed object such as silicon ingot to thin-plate shaped wafer used for manufacturing semiconductor device such as solar cell. Can also be used in sapphire and silicon carbide.    ADVANTAGE - The control unit which controls position of holding element which holds the to-be-processed object according to leaning angle of cutting wire, so that the cutting speed of object can be increased and the burnout rate of wire can be reduced. The process cost and machining time can be reduced and the productivity can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for cutting process method.    DESCRIPTION OF DRAWING(S) - The drawing shows an exploded perspective view of swiveling-type wire saw apparatus.    Swiveling-type wire saw apparatus (1)    Wire guide (2)    Cutting wire (3)    Holding element (51)    To-be-processed object (W)
NOVELTY - The substrate (10) has a conductive thin film (13), and an undercoat layer (12) that is stacked upon a surface of a glass substrate. The haze of the glass substrate is not more than 3%. The surface roughness of a surface of the glass substrate, is located at a side where the undercoat layer and the conductive thin film are to be stacked and maintained in the range 0.5 nm to 50 nm.    USE - Conductive thin film-equipped glass substrate for use in low-emissivity glass substrate and thin film solar cell (all claimed).    ADVANTAGE - The undercoat layer and the adhesiveness of the conductive thin film can be improved. The generation of peeling of the conductive thin film can be suppressed. The coating-film-peeling resistance with the conductive thin film can be improved. The haze can be reduced. The transparency of the conductive thin film-equipped glass substrate\can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of conductive thin film-equipped glass substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the conductive thin film-equipped glass substrate.    Conductive thin film-equipped glass substrate (10)    Glass substrate (11)    Undercoat layer (12)    Conductive thin film (13)
NOVELTY - Manufacture of glass involves preparing (S110) a glass substrate, and contacting (S120) the glass substrate with a processing gas including a fluorine compound at 250-650 degrees C under normal pressure and atmosphere.    USE - Manufacture of glass used for manufacturing panel for solar cell and display (all claimed) building material glass, and glass for motor vehicle. Uses include but are not limited to glass for window, display, and optical element, optical glass, and spectacle lens.    ADVANTAGE - The method enables manufacture of glass having excellent anti-reflective property.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating manufacture of glass. (Drawing includes non-English language text)    Glass substrate preparing process (S110)    Glass substrate and processing gas contacting process (S120)
NOVELTY - A process gas containing a fluorine compound is contacted with a surface of a glass substrate (310) at 250-650 degrees C under normal pressure in atmosphere, and a layer (330) of a fluorine-based organic compound is formed on the surface (312), to obtain anti-reflective glass (300).    USE - Manufacture of anti-reflective glass. Uses include but are not limited to building material, motor vehicle, display panel, optical element, solar cell panel, show window glass, optical glass, and spectacle lens.    ADVANTAGE - The method enables manufacture of anti-reflective glass having excellent antifouling property for a long period of time.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for glass.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of anti-reflective glass.    Glass (300)    Glass substrate (310)    Surface (312)    Contact layer (320)    Layer of fluorine-based organic compound (330)
NOVELTY - A curable resin composition comprises a radically polymerizable compound, an alicyclic epoxy compound, and an acid anhydride.    USE - Curable resin composition is used for hardened material (claimed). Uses include but are not limited to fiber reinforced material, solar cell substrate, optical element, transparent sheet, optical semiconductor element, carbon fiber reinforced plastic, touch screen, semiconductor sealing material, optical lens, electronic paper, etc.    ADVANTAGE - The curable resin composition has excellent workability and handleability, and provides hardened material having excellent heat-resistance and toughness, and does not contain high-molecular weight component such as polymer as an essential component.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for hardened material, which is obtained by hardening the curable resin composition.
NOVELTY - A heteroaromatic derivative (I) is new.    USE - New heteroaromatic derivative is used for photoactive layer for organic thin film solar cell (all claimed) for portable electronic component, clothes, bag and window of motor vehicle and building.    ADVANTAGE - The heteroaromatic derivative has high yield, high solubility and high charge mobility, and provides solar cell with high efficiency.    DETAILED DESCRIPTION - A heteroaromatic derivative of formula (I) is new.    A=6-20C arylene or 3-20C heteroarylene;    Z=S, O or Se;    R1,R2=1-20C alkyl, 1-20C alkylthio, 6-20C aryl-1-20C alkyl or 3-20C heteroaryl (all optionally substituted 1-20C alkyl, 2-20C alkenyl, 2-20C alkynyl, 1-20C alkoxy, amino, hydroxy, halo, cyano, nitro or trifluoromethyl silyl);    R11,R12=H, halo, 1-20C alkyl, 6-20C aryl, 3-20C heteroaryl, 3-20C cycloalkyl, 5-7-membered heterocycloalkyl, cyano, nitro or hydroxy;and    n=1-500.    An INDEPENDENT CLAIM is included for manufacture of heteroaromatic derivative (I).
NOVELTY - A printed circuit board consists of a substrate (1), a wiring layer (2) patterned on the substrate by printing a conductive paste composite, an electroless metal plating layer (3) formed on the patterned wiring layer, and an electrolytic or electroless metal plating layer (4,5) additionally formed on the electroless metal plating layer for improving electroconductivity of wiring formed with the patterned wiring layer and the electroless metal plating layer.    USE - Printed circuit board e.g. flexible printed circuit board and chip-on-board is used for radio-frequency identification system, light-emitting diode, organic thin film transistor, antenna, touch screen, and solar cell.    ADVANTAGE - The printed circuit board has improved conductivity, and enables the formation of wiring with reduced line width, and is environmentally-friendly.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabrication of printed circuit board.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the printed circuit board.    Substrate (1)    Wiring layer (2)    Electroless metal plating layer (3)    Electrolytic or electroless metal plating layer (4,5)
NOVELTY - Forming a catalytic material comprises: providing sacrificial template particles; templating a mixture of reactive polymer precursor and a metal precursor onto the sacrificial template particles under conditions to enable in situ polymerization of the reactive polymer precursors to produce a sacrificial template coated with a reactive polymer containing dispersed electrocatalytic material precursors; heat treating the dispersed precursors; and removing the sacrificial template particles to produce a highly dispersed, self-supported, high surface area electrocatalytic material.    USE - The method is useful for forming a catalytic material (claimed), which is useful in polymer electrolyte membrane and direct-methanol fuel cells.    ADVANTAGE - The method is capable of easily and economically forming active catalytic material with high stability and durability and reduced risk of damage in an industrial manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an unsupported catalytic material comprising highly dispersed active metal sites and a substantial portion of carbon and nitrogen derived from polymer formed from melamine, carbaldehyde and/or carbamide.
NOVELTY - Alkaline catalyst comprising a first metal, a second metal, and hydroxide, where an aqueous solution containing a hydrogen generation metal produces at least 4 l of hydrogen per 5 gram of hydrogen generation metal per 15 minutes at a production temperature of 140 degrees F and at a pressure of 1 atm, when the alkaline catalyst is added to the aqueous solution containing the hydrogen generation metal, is new.    USE - The alkaline catalyst is useful for producing hydrogen (claimed), which is useful in fuel cell, turbine generator and camp stove fuel.    ADVANTAGE - The alkaline catalyst ensures rapid and economical production of the hydrogen with high yield and stability in an efficient and eco-friendly manner, and can be recovered and recycled for repeated use.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) the preparation of the alkaline catalyst;    (2) a method-1 of producing hydrogen, comprising adding the alkaline catalyst to the aqueous solution containing the hydrogen generation metal; and    (3) a system for hydrogen generation, comprising the aqueous solution, the hydrogen generation metal, and the alkaline catalyst.    DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of a method for producing an alkaline catalyst.    Adding a first metal hydroxide to an aqueous solution (102)    Adding a second metal hydroxide to the aqueous solution (104)    Mixing the aqueous solution (106)    Subjecting the aqueous solution to a magnetic field of at least 5000 gauss (108)    Dehydrating: the aqueous solution to form a solid alkaline catalyst. (110)
NOVELTY - A composition comprises graphene sheets, and 1 or more metals having an anodic index of -0.7 V or less.    USE - Composition is used for coating for component and structure e.g. metallic reinforced material, concrete structure, and bridge (all claimed). Uses include but are not limited to tunnels, power plants, cooling towers, refineries, parking garages, foundation pilings, storage tanks, pier structures, solar cell, music players, etc.    ADVANTAGE - The coating formed using the composition has excellent corrosion resistance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) coating (20), which consists of composition;    (2) component or structure, which is coated with coating comprising composition; and    (3) method of inhibiting the corrosion of structure and object having surface, which involves coating portion of the surface with coating.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of reinforced structure.    Concrete structure (10)    Reinforced element (12)    Electroconductive element (14)    Surface (16)    Coating (20)
NOVELTY - A device contains substrate and carbon nanostructure-oxide-metal vertical diode array.    USE - A device for optoelectronic systems, such as data transfer in computing and sensing and terahertz detection.    ADVANTAGE - The arrays produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to 7800 mA/cm2.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) rectenna comprising antenna coupled to the device;    (2) conversion of solar energy to electrical energy which involves contacting solar cell consisting of rectenna with solar electromagnetic waves;    (3) conversion of solar energy to heat which involves contacting solar cell consisting of rectenna with solar electromagnetic waves;    (4) memory system comprising electric circuitry coupled to the device; and    (5) optical switch comprising electric circuitry coupled to the device.    DESCRIPTION OF DRAWING(S) - The drawings show process flow diagrams of CNT rectenna fabrication.    Silicon wafer substrate coated with catalytic layer of Fe and Al for nanotube growth (1)    Plasma-etched chemical vapor deposition growth of closed-end carbon nanotubes from catalytic layer (2)    CNT array with open-ended nanotubes (3)    Introduction of dielectric layer (4)    Deposition of metal contacts (5)
NOVELTY - The method involves providing a base substrate including a surface. III-V semiconductor material layers (110) are directly placed on the surface of the base substrate by using chemical vapor deposition (CVD) technique or molecular beam epitaxy technique. A stressor layer (150) is placed on one of the layers of III-V semiconductor material. A flexible handle substrate (160) is operatively associated with the stressor layer. A controlled spalling is used to separate the III-V semiconductor material layer from the base substrate to expose a surface of the layer.    USE - Method for monolithically integrating high efficiency flexible III-V based solar cells into a flexible substrate e.g. flexible handle substrate and base substrate, for recharging batteries for consumer mobile electronic devices or directly powering consumer mobile electronic devices.    ADVANTAGE - The method enables providing III-V semiconductor material layers on the surface of the base substrate, so that efficiency of the solar cell is improved by 20% under an air mass coefficient of 1.5 at 1 sun (solar irradiance of 1,000 watts/meter squared), thus decreasing material costs and processing costs of the solar cell.    DETAILED DESCRIPTION - The base substrate is made of one of silicon, silicon carbide, germanium, gallium arsenide, gallium nitride and indium phosphide.    DESCRIPTION OF DRAWING(S) - The drawing shows a side cross-sectional view of a monolithically integrated flexible solar cell in which adjacent cells are connected in series.    III-V semiconductor material layer (110)    Semi-insulating layer (120)    Dielectric layer (130)    Stressor layer (150)    Flexible handle substrate (160)
NOVELTY - The substrate processing apparatus comprises a processing vessel (202) configured to process a substrate (200). A purging portion is configured to perform a purge to supply inert gas at a flow rate into a substrate container accommodating the substrate. Another purging portion is configured to perform another purge to supply inert gas at another flow rate into the substrate container. The latter flow rate is lower than the former flow rate. A substrate container opening or closing portion is configured to open and close the substrate container.    USE - Substrate processing apparatus, such as an etching apparatus, an annealing apparatus, an oxidation apparatus or a nitridation apparatus for manufacturing semiconductor devices, such as large scale integrated circuits. Uses include but are not limited to an exposure apparatus, a coating apparatus, a molding apparatus, a developing apparatus, a dicing apparatus, a wire bonding apparatus, a drying apparatus, a heating apparatus, an inspection apparatus, liquid crystal display manufacturing apparatus or a solar cell manufacturing apparatus.    ADVANTAGE - The processing vessel is configured to process a substrate which ensures that the quality and manufacture throughput of semiconductor devices are improved effectively while suppressing formation of a natural oxide film.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following    (1) a method of manufacturing a semiconductor device; and    (2) a non-transitory computer-readable recording medium for storing a program.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a processing furnace in a substrate processing apparatus.    Substrate (200)    Processing vessel (202)    Boat (217)    Processing gas supplying nozzle (220)    Controller (280)
NOVELTY - A catalyst comprises porous metal nanoparticles which are encapsulated by reaction-enhancing material. The reaction-enhancing material enhances attraction of reactant(a) into pore(s) of porous metal catalyst, or expulsion of reaction product from pore(s) of porous metal catalyst. The porous metal nanoparticles are capable of catalyzing reactants to provide reaction product.    USE - Catalyst is used in redox reaction of oxygen to form water in fuel cell (all claimed).    ADVANTAGE - The catalyst has excellent catalytic activity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) fuel cell; and    (2) manufacture of encapsulated porous metal nanoparticles catalyst.
NOVELTY - An absorber layer (106) is formed on substrate (102) for absorbing photon. Then, a buffer layer (108) is formed on absorber layer, and intrinsic zinc oxide layer (112) is formed on buffer layer by hydrothermal reaction in solution comprising zinc-containing salt and alkaline chemical, to obtain photovoltaic device. The absorber layer and buffer layer are semiconductors.    USE - Fabrication of photovoltaic device e.g. thin-film solar cell.    ADVANTAGE - The method enables fabrication of photovoltaic device preventing short circuiting by reducing formation of shunt paths using intrinsic zinc oxide having high electrical resistance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for photovoltaic device.    DESCRIPTION OF DRAWING(S) - The drawing shows cross-section view of layers formed in photovoltaic device.    Substrate (102)    Back contact layer (104)    Absorber layer (106)    Buffer layer (108)    Intrinsic zinc oxide layer (112)
NOVELTY - A photovoltaic device comprises a laminate comprising primary intrinsic compositionally-graded semiconductor layer (35) comprising primary compositionally-graded alloy of a primary semiconductor material and a secondary semiconductor material, an intrinsic semiconductor material layer comprising at least secondary semiconductor material, and a secondary intrinsic compositionally-graded semiconductor layer (45) comprising a secondary compositionally-graded alloy of primary semiconductor material and secondary semiconductor material, sequentially.    USE - Photovoltaic device e.g. solar cell.    ADVANTAGE - The photovoltaic device has excellent open circuit voltage.    DETAILED DESCRIPTION - A photovoltaic device comprises a laminate comprising primary intrinsic compositionally-graded semiconductor layer comprising primary compositionally-graded alloy of a primary semiconductor material and a secondary semiconductor material, an intrinsic semiconductor material layer comprising at least secondary semiconductor material, and a secondary intrinsic compositionally-graded semiconductor layer comprising a secondary compositionally-graded alloy of primary semiconductor material and secondary semiconductor material, sequentially. The atomic concentration of secondary semiconductor material monotonically decreases with distance from an interface with intrinsic semiconductor layer in primary compositionally-graded alloy and secondary compositionally-graded alloy. An INDEPENDENT CLAIM is included for method for forming photovoltaic device.    DESCRIPTION OF DRAWING(S) - The drawing shows the vertical cross-sectional view of semiconductor structure.    P-doped primary semiconductor material layer (30)    Primary intrinsic compositionally-graded semiconductor layer (35)    Intrinsic secondary semiconductor material layer (40)    Secondary intrinsic compositionally-graded semiconductor layer (45)    N-doped primary semiconductor material layer (50)
NOVELTY - Substrate (A) consists of insulating support substrate (2) and alkali-metal supply layer (a) provided on the substrate (2). The alkali-metal supply layer contains potassium and sodium as alkali metal, in the molar ratio of 0.1 or more.    USE - Substrate is used for manufacture of copper-indium-gallium-selenide-type solar cell (claimed) for electric power generation.    ADVANTAGE - The substrate provides durable copper-indium-gallium-selenide-type solar cell with excellent power generating efficiency. Control of grain size of copper-indium-gallium-selenide layer even if it is formed at high temperature. Alkali-metal diffusion of alkali metal in copper-indium-gallium-selenide layer is favorable.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of copper-indium-gallium-selenide-type solar cell (1).    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of copper-indium-gallium-selenide-type solar cell.    Copper-indium-gallium-selenide-type solar cell (1)    Insulating support substrate (2)    Electrodes (3,7)    Photoelectric conversion layer (4)    Transparent conductive layer (6)    Substrate (A)    Alkali-metal supply layer (a)
NOVELTY - The apparatus (10) has a conveyance unit (11) that conveys the wafer (20) mounted in tray (21) along process path. A heater (12) heats the wafer. The inert gas head (13) sprays the inert gas such as nitrogen on wafer from upper direction, when the tray in which the wafer is mounted passes directly under the inert gas head. Dispersion head (14) sprays the film-forming gas on wafer from upper direction, when the tray directly passes under the dispersion head. Total flow volume of inert gas sprayed on wafer is more than the total flow volume of film-forming gas sprayed on wafer.    USE - Normal-pressure chemical vapor deposition (CVD) apparatus for forming thin film on silicon substrate/wafer, used during manufacturing of semiconductor device such as solar cell.    ADVANTAGE - Since the inert gas is sprayed on the wafer before spraying the film forming gas from film-gas supply section, the temperature of the wafer support surface decreases before the film forming process. Hence the curvature of the wafer generated by spraying of the film-forming gas during the film-forming process is reproduced in advance. The curvature state of the wafer can be stabilized. The thin film can be uniformly formed on the wafer surface by suppressing the curvature of wafer. The manufacturing cost of the solar cell can be reduced by cutting out several wafers from the same amount ingot.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the film forming method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the normal-pressure CVD apparatus. (Drawing includes non-English language text)    Normal-pressure chemical vapor deposition apparatus (10)    Conveyance unit (11)    Heater (12)    Inert gas head (13)    Dispersion head (14)    Wafer (20)    Tray (21)
NOVELTY - The solar cell (10) has an interfacial stabilization film (4a) provided on the surface of an N-type silicon layer (2). Another interfacial stabilization film (4b) is provided on the surface of a P-type silicon layer (3). The interfacial stabilization films consist of silicon dioxide layer (5), aluminum trioxide layer and aluminum oxide layer (6) in the laminated state. The aluminum trioxide layer localizes fixed electric charge in the interface with the silicon dioxide layer.    USE - Solar cell for photovoltaic power generation system.    ADVANTAGE - The interface trap density level is reduced by using interfacial stabilization film consisting of three layers. The operation efficiency of solar cell is improved by reducing carrier recombination speed.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for solar cell manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the solar cell structure.    N-type silicon layer (2)    P-type silicon layer (3)    Interfacial stabilization films (4a,4b)    Silicon dioxide layer (5)    Aluminum oxide layer (6)    Solar cell (10)
NOVELTY - The solar cell distribution electrical storage system (10) has a charge-and-discharge circuit (30) which controls the charge of a lithium ion battery (LiB) by the electric power generated by a photovoltaic cell (24) which belongs to an applicable division system in the service voltage range of the battery, and the discharge from the battery. A power inverter circuit (40) outputs the electric power generated by the cell, and the electric power discharged from the battery. The battery consists of an electrical storage cell whose serial number is 1.    USE - Solar cell distribution electrical storage system.    ADVANTAGE - Eliminates the use of an equalization circuit, thus simplifying and reducing the size of the control circuitry.    DESCRIPTION OF DRAWING(S) - The drawing shows the block diagram of the solar cell distribution electrical storage system. (Drawing includes non-English language text).    Solar cell distribution electrical storage system (10)    Photovoltaic cell (24)    Charge-and-discharge circuit (30)    Power inverter (40)    Lithium ion battery (LiB)
NOVELTY - The particle has sorts of functional group that are selected from the group which consists of a respective functional group. The number of conjugated double bonds is modified by the conjugated organic molecule.    USE - Surface modification sulfide semiconductor particle of thin film solar cell.    ADVANTAGE - The thin film solar cell can be manufactured using the surface modification sulfide semiconductor particle.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a thin film solar cell.
NOVELTY - A difficulty ice coating surface structure is obtained by coating silane-type compound, and has surface roughness of 1-5 mu m. The difficulty ice coating surface structure has water-repellent surface having contact angle with water of 130 degrees or more.    USE - Difficulty ice coating surface structure. Uses include but are not limited to structural material of building, clamp for spiral rod, armor rod, spacer for electric wire, steel pipe, construction material, boats and ships, aeroplane, solar cell panel, impeller of windmill, etc.    ADVANTAGE - The difficulty ice coating surface structure provides dropping of ice without using electric power, and has excellent anti-corrosion property.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of difficulty ice coating surface structure, which involves manufacturing strand wire-like electric wire, producing surface micro structure on electric wire, and coating silane-type compound.    DESCRIPTION OF DRAWING(S) - The drawing shows sectional view of overhead power line.    Overhead power line (10)    Raw steel filament (11)    Strand (12)
NOVELTY - Manufacture of indium-hydroxide powder involves performing electrolysis reaction using anode containing an indium and ammonium nitrate aqueous solution as electrolyte solution. The solubility of indium-hydroxide powder is 10-6-10-3 mol/L.    USE - Manufacture of indium-hydroxide powder used for manufacturing indium oxide powder for sputtering target (all claimed) for transparent conductive film for solar cell and touchscreen.    ADVANTAGE - The method efficiently provides indium-hydroxide powder having uniform particle size and narrow particle size distribution width, and high density.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of indium oxide powder, which involves forming (S1) indium-hydroxide powder and calcining.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of manufacture of indium oxide powder. (Drawing includes non-English language text)    Generation of indium-hydroxide powder (S1)    Recovering produced indium-hydroxide powder (S2)    Drying process (S3)    Generation of indium oxide powder (S4)
NOVELTY - Forming a solar cell, comprises: (a) providing an indium-aluminum target of indium and aluminum; (b) providing a solar cell substrate (2) with a back contact layer (6) on it; (c) forming metallic precursor layers (10) over the back contact layer by sputtering materials of the indium-aluminum target onto the solar cell substrate over the back contact layer; and (d) thermally processing (38) the obtained substrate, thus converting the metal precursor layers to an absorber layer.    USE - The method is useful for forming a solar cell.    ADVANTAGE - The method utilizes the aluminum, and indium-containing layer having smoother morphology and improved compositional uniformity, hence provides the solar cell with enhanced efficiency.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a sequence of processing operations for forming the solar cell.    Solar cell substrate (2)    Back contact layer (6)    Metallic Precursor layers (10)    Thermal processing step (38)    Selenization process (40)
NOVELTY - Formation of graphene oxide involves oxidizing graphite using an acid to obtain primary reaction product containing graphene oxide, recovering acid from the primary reaction product, and then oxidizing the graphite using the recovered acid to obtain recycled reaction product containing graphene oxide.    USE - Formation of graphene oxide. Uses include but are not limited to primary battery, secondary battery, electric component, notebook computer, mobile phone, touch panel, lithium-ion capacitor, fuel cell, thin film solar cell, liquid crystal display, etc.    ADVANTAGE - The method provides graphene oxide with improved productivity under short period of time.
NOVELTY - A plating liquid comprises 0.1-500 g silicon powder, 0.5-500 g oxidizing agent, 1-500 g potassium cyanide in 1 l water.    USE - Plating liquid used in manufacture of substrate (claimed) used as solar cell substrate.    ADVANTAGE - The plating liquid enables manufacture of substrate by a simple process with improved productivity.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of substrate, which involves preparing the plating liquid, adding boron to plating liquid, placing a substrate into the prepared plating liquid, preparing another plating solution, and plating the substrate with the prepared solution.
NOVELTY - The apparatus has a top plate (7) that contacts upper portion of vacuum vessel (1) on sides of O-ring (3). An exhaust apparatus (5) exhausts and reduces pressure inside the vacuum vessel. An electric field supply unit supplies electric field to transmit top plate and to form plasma in vacuum vessel. A peeling unit engages with vacuum vessel and top plate and spaces apart the top plate relative to vacuum vessel. A solvent supply path supplies solvent from outer peripheral portion of vacuum vessel. A solvent container is arranged in solvent supply path.    USE - Plasma processing apparatus e.g. vacuum processing apparatus used for manufacturing semiconductor device such as CPU, flash memory, solar cell and LED.    ADVANTAGE - Since the solvent supply path is provided to supply solvent from outer peripheral portion of vacuum vessel and the solvent container is arranged in solvent supply path, the air release can be easily carried out at the top plate of vacuum vessel, and the removal of the components of vacuum vessel can be made easier and the plasma processing apparatus maintenance time can be effectively shortened.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for removing top plate of vacuum processing apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the vacuum vessel of vacuum processing apparatus.    Vacuum vessel (1)    O-ring (3)    Induction coil (4)    Exhaust apparatus (5)    Top plate (7)
NOVELTY - Manufacture of alkali-metal silicate and silicon involves contacting alkali metal and silica (2), obtaining mixture comprising alkali-metal silicate, and alkali-metal silicide, and separating silicon, and alkali-metal salt.    USE - Manufacture of alkali-metal silicate and silicon used for steel, aluminum metal, and solar cell. Uses include but are not limited to fumed silica, and semiconductor material.    ADVANTAGE - The method enables manufacture of alkali-metal silicate and silicon having high purity with high yield.    DESCRIPTION OF DRAWING(S) - The drawing shows a reactor of manufacturing alkali-metal silicate and silicon.    Metallic sodium (1)    Silica (2)    Boron nitride or aluminum trioxide or magnesium oxide crucible (3)    Reaction container (4)    Electric furnace (5)
NOVELTY - The deposition source (5) has vapor deposition material (11) that is adjoined to trigger electrode (13). The trigger discharge is generated between trigger electrode and vapor deposition material, when voltage is applied to trigger electrode. An arc discharge is induced between anode electrode (23) and vapor deposition material, so that constituent of vapor deposition material is evaporated. A jet nozzle of supply-flow channel which introduces hydrogen gas from exterior space is located in space between anode electrode and trigger electrode.    USE - Coaxial-type vacuum-arc vapor-deposition source of micro-particles forming apparatus (claimed) for forming nitride micro-particles such as niobium, tantalum titanium and zirconium used for fuel cell catalyst, photo-catalyst and waste gas catalyst used in vehicle industry, chemical industry and household appliance manufacturing industry.    ADVANTAGE - The oxidation of nano-particle and film of vapor-deposited portion can be suppressed by providing jet nozzle of supply-flow channel to introduce hydrogen gas from exterior space.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a micro-particles forming apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the micro-particles forming apparatus using the coaxial-type vacuum-arc vapor-deposition source.    Deposition source (5)    Vapor deposition material (11)    Cathode electrode (12)    Trigger electrode (13)    Anode electrode (23)
NOVELTY - The apparatus (100) has a process chamber housing (102) defining a process chamber (103). A platen (108) is positioned in the process chamber for supporting a workpiece (110). A source (114) generates plasma in the process chamber. A biasing system (170) biases the platen to attract ions from the plasma towards the workpiece during first processing time interval and the platen to repel the ions from the platen toward interior surfaces of the process chamber housing during cleaning time interval separate from the first time interval and occurring after the first time interval.    USE - Plasma processing apparatus such as doping systems, etching systems and deposition systems.    ADVANTAGE - The process chamber is operated at pressure of less than or equal to 10 mTorr, so that switching efficiency between species in the process chamber is facilitated and cross contamination concerns are minimized with effective cleaning. The apparatus utilizes a dual-polarity power supply for providing a positively pulsed direct current (DC) signal to the platen comprising positive amplitude (VC) during cleaning time interval to provide sufficient energy for effective ion assisted cleaning.    DETAILED DESCRIPTION - The workpiece is a semiconductor wafer, a solar cell, a flat panel and a polymer substrate. An INDEPENDENT CLAIM is also included for a plasma processing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a plasma processing apparatus comprising a biasing system.    Plasma processing apparatus (100)    Process chamber housing (102)    Process chamber (103)    Platen (108)    Workpiece (110)    Source (114)    Biasing system (170)
NOVELTY - A semi-aromatic polyamide film comprises 90-98 %mass semi-aromatic polyamide (A) and 2-10 %mass thermoplastic elastomer (B). The semi-aromatic polyamide (A) comprises dicarboxylic acid(s) including terephthalic acid as a main component and diamine(s) including 9C aliphatic diamine as a main component. The thermoplastic elastomer (B) has a functional group. The semi-aromatic polyamide film is a stretched film.    USE - Semi-aromatic polyamide film is used as substrate film for flexible printed circuit, coverlay film, switch and insulation film for touch screen. Uses include but are not limited to packaging material of pharmaceutical, electrical insulation material for motor, dielectric material for capacitor, video tape, guard plate for solar cell substrate, liquid-crystal board, light-emitting diode mounted substrate, tape for heat-resistant masking, heat-resistant barcode label, heat-resistant reflector, and photographic film, etc.    ADVANTAGE - The semi-aromatic polyamide film has high heat resistance, heat-and-moisture resistance and chemical resistance, excellent ductility and deformation tolerance, reduced thickness and nonuniformity, and low water-absorption property.
NOVELTY - The photo voltaic device (10) has a semiconductor region (14) that is provided with a pnictide semiconductor formed of zinc and phosphorus. An insulating region (22) comprising chalcogenide with thickness ranging between 0.5 nm to 20 nm is electrically coupled to the semiconductor region is. A rectifying region (24) is electrically communicated with the semiconductor region in a manner such that the insulating region is electrically mounted between the collector region and semiconductor region.    USE - Photovoltaic device such as solar cell device with metal-insulator-semiconductor (MIS) and semiconductor-insulator-semiconductor (SIS) structures.    ADVANTAGE - The rectifying region is electrically communicated with the semiconductor region in the manner such that the insulating region is electrically mounted between the collector region and semiconductor region, thus the quality of the insulating layer in photovoltaic device in which the insulator layer interfaces with the pnictide-containing film can be improved efficiently. The better passivation can be achieved, and the electronic characteristics of the device can be improved. Hence, the electronic performance of the device can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for making photovoltaic device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the photovolatic device incorporating the pnictide semiconductor.    Photovoltaic device (10)    Incident light (12)    Semiconductor region (14)    Insulating region (22)    Rectifying region (24)
NOVELTY - A solvent composition comprises solvent and hydroxy alkyl-containing compound (I) (excluding monohydroxy stearic acid).    USE - Solvent composition used for manufacture of paste composition (claimed) for forming coating film, wiring or micro-pattern of electronic device. Uses include but are not limited to capacitor, inductor, varistor, thermistor, transistor, speaker, actuator, antenna and solid oxide fuel cell.    ADVANTAGE - The coating film and wiring of the electronic device formed using the paste composition suppresses the reduction of electrical characteristics, delamination and defects during wiring and coating film formation. Since the solvent composition contains low molecular weight gelatinizer having specific structure, the paste composition having favorable viscosity for the formation of coating film and wiring of the electronic device is obtained. The wiring pattern formed using the paste composition has high accuracy. The softening of the paste composition is prevented by drying and baking process. The generation of residual ash content and volatile material in the wiring and coating film is reduced, even after passing through baking process.    DETAILED DESCRIPTION - A solvent composition comprises solvent and hydroxy alkyl-containing compound (excluding monohydroxy stearic acid) of formula: R1-CH2-R2 (I).    R1=monohydroxy alkyl;and    R2=carboxy or amide.    An INDEPENDENT CLAIM is included for manufacture of the paste composition, which involves heat-dissolving the solvent composition at 30-90 degrees C.
NOVELTY - The manufacturing method involves using PVD to form a layer of transparent conducting oxide (TCO) (21), using plasma-enhanced chemical vapor deposition (PECVD) to form a layer of hole-based silicon semiconductor (22), using PECVD to form first layer of intrinsic microcrystalline silicon semiconductor (23), and using PECVD under a condition of high processing pressure and high plasma power to form second layer of intrinsic microcrystalline silicon semiconductor (24). The PVD is used to form a conductive metal layer (27) in pattern on the layer of electron-based silicon semiconductor (26).    USE - Manufacturing method of microcrystalline silicon thin film solar cell.    ADVANTAGE - Effectively prevents chamber contamination during film deposition from happening in the high processing pressure and high plasma power (PECVD) process and simultaneously enabling the multiple layers of microcrystalline silicon thin film respectively in different chambers using different plasma sources while allowing crystallinity as well as the structure of microcrystalline silicon thin film to be formed by manufacturing method to be controlled and adjusted at will.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram showing a process chamber used in manufacturing method.    Substrate (20)    TCO (21)    Hole-based silicon semiconductor (22)    First layer of intrinsic microcrystalline silicon semiconductor (23)    Second layer of intrinsic microcrystalline silicon semiconductor (24)    Electron-based silicon semiconductor (26)    Conductive metal layer (27)
NOVELTY - A solar cell (100) has a primary transparent conductive film (300), a photoelectric converting layer (400) and a secondary transparent conductive film (500) provided one by one on a substrate (200). The solar cell is operated by injecting light (10) from secondary transparent conductive film side, or injecting light from side of the substrate and secondary transparent conductive film. The primary transparent conductive film and secondary transparent conductive film contains an amorphous oxide respectively containing indium, and gallium and zinc.    USE - Solar cell (claimed).    ADVANTAGE - The solar cell has excellent optoelectronic taking-out efficiency, favorable short circuit current density and high curve factor.    DETAILED DESCRIPTION - A solar cell has a primary transparent conductive film, a photoelectric converting layer and a secondary transparent conductive film provided one by one on a substrate. The solar cell is operated by injecting light from secondary transparent conductive film side, or injecting light from side of the substrate and secondary transparent conductive film. The primary transparent conductive film and secondary transparent conductive film contains an amorphous oxide respectively containing indium, and gallium and zinc. In the primary transparent conductive film, the composition ratio of indium and gallium is 1, and the composition ratio of zinc and gallium is 1. In the secondary transparent conductive film, the composition ratio of indium and gallium is 1-4, and the composition ratio of zinc and gallium is 1-4. An INDEPENDENT CLAIM is included for manufacture of solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of solar cell.    Light (10)    Solar cell (100)    Substrate (200)    Transparent conductive films (300,500)    Photoelectric converting layer (400)
NOVELTY - An organic thin film solar cell material comprises aza dipyrromethene compound.    USE - An organic thin film solar cell material for organic thin film solar cell used for apparatus (all claimed) e.g. power supply, timepiece, mobile telephone, personal computer, and electrical appliance.    ADVANTAGE - The organic thin film solar cell material exhibits outstanding optical absorption property, and the organic solar cell shows excellent photoelectric transfer characteristics.    DETAILED DESCRIPTION - An organic thin film solar cell material comprises aza dipyrromethene compound of formula (I).    Rg1, Rg2=optionally substituted 6-membered heterocyclic ring with greater than or equal to 1 N atom or optionally substituted 5-membered heterocyclic ring with greater than or equal to 1 N atom;    Rg3, Rg4=optionally substituted 6-30C aromatic hydrocarbon ring or optionally substituted 5-40C heterocyclic ring;    Rg5=halo, OH, optionally substituted 6-30C aromatic hydrocarbon ring, or optionally substituted 5-40C heterocyclic ring;    n=0 or 1; and    M=coordination metal.    An INDEPENDENT CLAIM is included for organic thin film solar cell which contains organic thin film solar cell material as active layer.
NOVELTY - Depositing polycrystalline silicon, comprises introducing a reaction gas comprising a silicon containing component and hydrogen into a reactor, depositing polycrystalline silicon in the form of rods, introducing a silicon or silicon-containing compounds acting gas into the reactor, circulating silicon or silicon-containing compounds attacking gas around the polycrystalline rods and an inner wall of reactor to assist in the formed deposit, and adhering silicon-containing particles to the inner wall of the reactor or on the polycrystalline silicon rods before removing the rods from the reactor.    USE - The method is useful for depositing polycrystalline silicon (claimed), which is useful as a starting material for the production of single crystal silicon for semiconductors and for the manufacture of solar cells for photovoltaics.    ADVANTAGE - The method ensures efficient deposition of highly pure polycrystalline silicon thus reducing the production cost of the single crystal silicon.    DETAILED DESCRIPTION - Deposition of polycrystalline silicon, comprises introducing a reaction gas comprising a silicon containing component and hydrogen into a reactor, depositing polycrystalline silicon in the form of rods, introducing a silicon or silicon-containing compounds acting gas into the reactor, circulating silicon or silicon-containing compounds attacking gas around the polycrystalline rods and an inner wall of reactor to assist in the formed deposit, and adhering silicon-containing particles to the inner wall of the reactor or on the polycrystalline silicon rods before removing the polycrystalline silicon rods from the reactor.
NOVELTY - Production of high purity silicon nitride, comprises (a) producing high-purity silicon dioxide by precipitation of at least one silicate solution with at least one acidifying agent, where pH value of precipitation template, precipitation suspension and washing medium is less than 2, preferably less than 0.5 in the first washing step, and (b) implementing the high-purity silicon dioxide with at least one high purity carbon source and at least one nitrogen source to obtain high-purity silicon nitride.    USE - The method is useful for producing high purity silicon nitride that is useful: for the production of high purity silicon; for the production of ceramic materials; and as a coating material, a separation layer and/or a barrier layer, where the high purity silicon is useful for manufacturing solar cells or other products for solar and electronic industry (all claimed).    ADVANTAGE - The method is capable of economically and efficiently producing the silicon nitride with high purity (99.99%) and without other impurities.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) high purity silicon nitride, obtained by the method, having aluminum content of less than or equal to 5 parts per million (ppm), boron content of 10-0.0001 ppm, calcium content of less than or equal to 2 ppm, iron content of less than or equal to 20 ppm, nickel content of less than or equal to 10 ppm, phosphorus content of 10-0.0001 ppm, titanium content of less than or equal to 2 ppm and zinc content of less than or equal to 3 ppm; and    (2) preparing high purity silicon comprising thermally decomposing the high purity silicon nitride.
NOVELTY - The method involves providing a connecting web (3) for connecting mutually spaced apart contact elements (2) of device (15) for electrically connecting electrical energy store to battery. The contact elements are made of electrically conductive semi-finished copper or aluminum sheet. An electrical insulative carrier (12) is coherently and permanently fixed with contact elements, and is connected with lead frame (1). The connecting web between contact elements is removed.    USE - Manufacturing method of device for electrically connecting electrical energy store e.g. flat cell such as lithium ion cell, lead acid cell, zinc cell, nickel metal hydride cell and fuel cell to battery used for electrical propelled vehicle (all claimed) such as hybrid and electric car. Can also be used in manufacturing device for electrically connecting other electrical energy stores such as double layer capacitor to battery.    ADVANTAGE - The manufacture of device for electrically connecting electrical energy store to battery is facilitated at low cost. The space saving by interconnecting the flat cells to battery using device is achieved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device for electrically connecting electrical energy store to battery.    DESCRIPTION OF DRAWING(S) - The drawings show the top view of the lead frame and perspective view of the device for electrically connecting electrical energy store to battery.    Lead frame (1)    Contact element (2)    Connecting web (3)    Carrier (12)    Device for device for electrically connecting electrical energy store to battery (15)
NOVELTY - 2,3,7,8-Tetrahydro-1,6-dioxa-pyrene organic semiconductor materials (I) are new.    USE - (I) are useful in semiconductor electronic devices e.g. organic electroluminescent devices, organic field effect transistor, organic thin film transistor, organic light emitting transistor, organic integrated circuits, organic solar cells, organic field quenching device, light emitting electrochemical cell, organic laser diode and organic photoreceptor, and photoelectric devices (all claimed).    ADVANTAGE - (I) have good environmental stability and photoelectric properties; have good solution processing properties; has simple preparation process; and facilitate modification treatment subsequently.    DETAILED DESCRIPTION - 2,3,7,8-Tetrahydro-1,6-dioxa-pyrene organic semiconductor materials of formula (I) are new.    R1-R4 = 1-22C straight, branched or cyclic alkyl, 2-40C alkenyl, alkynyl, aryl, arylalkyl (at least one carbon is optionally replaced with X1 or substituted with Z1) or H;    X1 = Si, Se, O, S or N;    Z1 = alkenyl, alkynyl, aryl, hydroxy, amino, carbonyl, carboxy, ester, cyano or nitro; and    rings Ar1, Ar2 = benzene, biphenyl, naphthalene, anthracene, thiophene, benzothiophene, bithiophene or its derivatives.    An INDEPENDENT CLAIM is also included for preparation of (I).
NOVELTY - Preparing metalloporphyrin-phenolic resin comprises dissolving meso-tetra (hydroxyphenyl) porphyrin and metal acetate in N,N-dimethyl formamide, reflux heating, pouring into deionized water, cooling, aging, vacuum filtering, and washing, re-crystallizing the resulting product using methanol, to obtain meso-tetra (hydroxyphenyl) metalloporphyrin; dissolving meso-tetra (hydroxyphenyl) metalloporphyrin in sodium hydroxide solution, adding deionized water to dilute, adding phenol and formaldehyde, placing in water bath, adding surfactant-containing solution, stirring, and filtering.    USE - The metalloporphyrin-phenolic resin is useful for non-precious metal fuel cell cathode material catalyst.    DETAILED DESCRIPTION - Preparing metalloporphyrin-phenolic resin comprises (i) purifying meso-tetra (hydroxyphenyl) porphyrin by column chromatography, dissolving meso-tetra (hydroxyphenyl) porphyrin and metal acetate in N,N-dimethyl formamide, reflux heating at 100-200 degrees C for 30-90 minutes, pouring into 2 volumes of deionized water, cooling to room temperature, aging for 12-36 hours, vacuum filtering, and washing, re-crystallizing the resulting product using 2-5 times of methanol, to obtain meso-tetra (hydroxyphenyl) metalloporphyrin; (ii) dissolving meso-tetra (hydroxyphenyl) metalloporphyrin in sodium hydroxide solution, adding deionized water to dilute and to adjust the pH to 8-14, adding phenol and formaldehyde, placing in 40-90 degrees C constant temperature water bath for 20-60 minutes, adding surfactant-containing solution, stirring at 60-90 degrees C for 3-7 days, filtering, where the ratio of meso-tetra (hydroxyphenyl) metalloporphyrin and sodium hydroxide is 0.1-10, the molar ratio of meso-tetra (hydroxyphenyl) metalloporphyrin and phenol is 0.1-5, the surfactant is a polyethylene oxide-polypropylene oxide-polyethylene oxide, and the concentration is 50-250 g/l.
NOVELTY - A Tolumonas osonensis strain P2-A-1 having power generation ability, comprising 16S ribosomal DNA (rDNA) gene having 1425 base pair sequence (SEQ ID NO: 1) fully defined in the specification (GU370947), is new. The T.osonensis strain P2-A-1 is T.osonensis strain P2-A-1 (CGMCC 7562).    USE - The T.osonensis strain P2-A-1 is useful for processing sludge and sewage in factory, and separation, purification and filtration to obtain Gram-negative bacteria, in gelatin liquefying experiment, urease experiment, sulfureted hydrogen test and indole test, and as microbial fuel cell for power generation (all claimed).    ADVANTAGE - The T.osonensis strain P2-A-1 is directly utilized as microbial cell and exhibits high power generating ability, and provides power density of 509 mW/m2.
NOVELTY - The unit has a primary chamber provided with a housing that is filled with a primary liquid medium, where sides of the housing is closed with sealing covers. The first sealing cover is passes through an outlet duct and a secondary closed chamber of a primary circuit and a metal main housing. A wall of a third sealing cover is connected with a wall of the second sealing cover. The primary chamber is provided with a lead lining outer casing that is made of copper. The metal main casing is made of stainless steel.    USE - Power unit for low-energy nuclear sources.
NOVELTY - Selenization of solar battery comprises forming surface of precursor layer of substrate unit in one heating cavity, vacuum heating, improving heating inner cavity of air circulation, putting reaction gas into selenide to heating cavity of air pressure value in heating cavity, increasing temperature in heating cavity, reacting reaction gas into selenide in heating cavity, increasing pressure to 2-6 atm after annealing process, reacting reaction gas and selenide precursor layer and forming light absorbing layer.    USE - Method of selenization of solar battery used for selenide device of solar battery (claimed).    ADVANTAGE - The method has shortened heating and cooling time and selenide reaction time.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the solar battery.
NOVELTY - A copper-gallium binary sputtering target has a composition containing 28-35 atom% gallium, remainder of copper and unavoidable impurities, and a coexisting structure such that a low-gallium-content copper-gallium binary alloy phase having 26 atom% or less gallium, remainder of copper, is enveloped by a high-gallium-content copper-gallium binary alloy phase having at least 28 atom% gallium.    USE - Copper-gallium binary sputtering target is used for manufacturing solar cell.    ADVANTAGE - The copper-gallium binary sputtering target is efficiently manufactured with high density and flexural strength, and suppressed generation of crack during cutting, and improved generating efficiency, and excellent machinability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of copper-gallium binary system sputtering target.
NOVELTY - Semiconductor material comprises a first layer formed above a surface of a substrate, where the first layer comprises: copper, indium, gallium, silver and at least one of sulfur or selenium; copper, indium, gallium, aluminum and at least one of sulfur or selenium; or at least one of X1a, copper, indium, gallium and at least one of sulfur or selenium, where X1a is sodium, magnesium, potassium and calcium, and the concentration of X1a varies from a first interface of the first layer to a second interface of the first layer.    USE - The semiconductor material is useful in a thin film photovoltaic device, copper indium gallium sulfide or copper indium gallium selenide solar cells, and copper zinc tin sulfide or copper zinc tin selenide solar cells.    ADVANTAGE - The semiconductor material utilizes the first layer which increases the band gap at the front surface of the absorber layer, and thus exhibits higher efficiency performance than those having a single gradient in the band-gap.
NOVELTY - A cobalt-based alloy comprises 18-32 wt.% chromium, 3-16 wt.% tungsten, 0.1-5 wt.% iron, 0.01-0.2 wt.% carbon, 0.5-2 wt.% manganese, 0.1-1 wt.% silicon, 0.005-0.3 wt.% aluminum, 0.001-0.08 wt.% vanadium, 0.0001-0.008 wt.% boron, 0.001-0.02 wt.% magnesium and remainder of cobalt and unavoidable impurities.    USE - Cobalt-based alloy is used for apparatus structural component (claimed) e.g. reaction container and piping for manufacture of compound semiconductor photovoltaic solar cell.    ADVANTAGE - The apparatus structural component containing the cobalt-based alloy has excellent workability, and decomposable-proof property with respect to hydrogen sulfide and hydrogen selenide.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for apparatus structural component.
NOVELTY - The electrode has an electrode base layer (2) which contacts with an electrical power collector (1). An electrode surface layer (3) contacts with an electrolyte layer (4), and the electrode base layer which has an active material, a conductive support agent, and a binder. The electrode surface layer has an electroconductive substance formed to contact all of the electrode surfaces.    USE - Electrode for electrical storage devices (claimed) e.g., lithium secondary battery of electronic devices. Uses include but are not limited to a portable personal computer, a mobile telephone, a portable information terminal, a hybrid electric vehicle, an electric vehicle, and a fuel cell electric vehicle.    ADVANTAGE - Achieves an electrode that has excellent energy density and cycling characteristics, and improves retainability of electrolyte solution, and retention ratio of an electrical storage device.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an electrode. (Drawing includes non-English language text).    Electrical power collector (1)    Electrode base layer (2)    Electrode surface layer (3)    Electrolyte layer (4)
NOVELTY - An imprint material comprises component (A) having ethylene oxide unit with repeat unit number of 2-46, and urethane bond(s) in principal chain, and compound having 4-10 polymeric groups in both terminal of molecule, silicone compound as component (B) and photoinitiator as compound (C).    USE - Imprint material is used for forming optical component, solid-state imaging device, light-emitting device, semiconductor element, solar cell, display and electronic device (all claimed). Uses include but are not limited to storage media, biochips, and lithography.    ADVANTAGE - The imprint material provides film having excellent abrasion resistance and low mold-release strength, and enables excellent pattern formation.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for film, which is obtained by coating imprint material and transferring pattern.
NOVELTY - The manufacturing method involves forming a diffusion prevention mask layer in the back surface on the opposite side to a light receiving surface of a substrate (1). The pulse width is patterned in the diffusion prevention mask layer by irradiation of the short pulsed laser radiation. The impurity is diffused at the back surface of the substrate by setting the diffusion prevention mask layer as a mask. The diffusion prevention mask layer is made of an oxide layer and a nitride layer.    USE - Method for manufacturing a photovoltaic cell (Claimed), such as a back-electrode-type solar cell.    ADVANTAGE - The diffusion prevention mask layer is formed in the back surface on the opposite side to a light receiving surface of a substrate and the impurity is diffused at the back surface of the substrate by setting the diffusion prevention mask layer as a mask, thus simplifies the manufacturing process at low cost and achieves high conversion efficiency.    DESCRIPTION OF DRAWING(S) - The drawings show a schematic representation of a manufacturing method of the photovoltaic cell.    Substrate (1)    Diffusion prevention masks (2,3)    Short pulsed laser radiation (4)    Opening unit (5)    Passivation film (10)
NOVELTY - The manufacturing method involves forming a light absorption layer (13). The light absorption layer undiluted solution made to dissolve a compound and thiourea containing copper, zinc and tin in a solvent is prepared. The light absorption layer undiluted solution is coated on a substrate (11). The solvent of coated light absorption layer undiluted solution is dried. The precursor layer is formed. The compound semiconductor that sinters the precursor layer and absorbs light is formed. The light absorption layer undiluted solution contains a chloride and molybdenum.    USE - Method for manufacturing a solar cell.    ADVANTAGE - The manufacturing method involves forming a light absorption layer, and thus ensures safe and inexpensive solar cell manufacturing method, prevents precipitation of the compound dissolved in the light absorption layer, and improves the productivity of the solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a solar cell.    Substrate (11)    Lower electrode (12)    Light absorption layer (13)    Buffer layer (14)    Transparent electrode (15)
NOVELTY - The solar cell panel has a frame (105) with transparent elements, which clamps an outer edge portion of a solar cell module (104). A light-diffusion layer (106) is provided on a surface of a light-receiving surface side of the recessed portions that clamp a photovoltaic cell (101) of the solar cell module. The light-diffusion layer, in which a titanium oxide particle is dispersed, comprises a layer of glass particles. A light reflection portion is provided on a side surface of the frame. An edge portion of the light-receiving surface side is formed in curved-surface shape.    USE - Solar cell panel.    ADVANTAGE - The light-diffusion layer is provided on a surface of the light-receiving surface side of the recessed portions that clamp the photovoltaic cell, and thus reduces the amount of optical losses that are generated due to the frame, and hence improves the modular output of the modular peripheral portion and ensures that a highly efficient solar cell panel is provided.    DESCRIPTION OF DRAWING(S) - The drawings show a top view and a cross-sectional view of a solar cell panel. (Drawing includes non-English language text).    Photovoltaic cell (101)    Filler (103)    Solar cell module (104)    Frame (105)    Light-diffusion layer (106)
NOVELTY - A composite encapsulating material comprises silicon dioxide, aluminum oxide, yttrium oxide and zinc oxide.    USE - Composite encapsulating material.    ADVANTAGE - The composite encapsulating material has better air impermeability and compressibility, and lower softening temperature, and is eco-friendly.
NOVELTY - A laminated film consists of a polyester film, and a film layer laminated on the surface(s) of the polyester film. The film layer contains acid-modified polyolefin resin, and basic compound having boiling point of 200 degrees C or less. The polyester film contains a compound (A) derived from the acid-modified polyolefin resin contained in the film layer.    USE - Laminated film is used as solar cell module backsheet, optical film, tracing film, packaging film, magnetic tape, and insulating tape.    ADVANTAGE - The laminated film has excellent recyclability, water resistance, and adhesiveness, and is economical.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of laminated film, which involves carrying out film-forming process by applying a coating liquid containing acid-modified polyolefin resin and basic compound on the polyester film, providing the film layer, and stretching the film layer.
NOVELTY - The method involves doping the impurity through an opening unit. The opening unit is formed by exposing a semiconductor substrate (10) to a mask layer using an etching paste. The etching paste is formed on the mask layer. The mask layer is formed on the semiconductor substrate. The semiconductor substrate is prepared. The etching paste is provided with an acid material. The mask layer is deposited in the etching paste and is provided with silicon nitride and silicon oxide. An impurity layer (22) is provided with a back surface field. The mask layer is removed using the acid material.    USE - Method for manufacturing a solar cell.    ADVANTAGE - The opening unit is formed by exposing the semiconductor substrate to the mask layer using the etching paste and the mask layer is provided with silicon nitride and silicon oxide, thus simplifies the process forming the impurity layer, and thus ensures high producibility for manufacturing the solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a solar cell.    Semiconductor substrate (10)    Impurity layers (20,30)    Reflection barrier layer (22)    Electrode (24)    Passivation film (32)
NOVELTY - A cover glass has a volume resistivity of 1x 108.3 Omega .cm or more and surface layer to be disposed on the solar-cell side having a sodium concentration of 0.01-13 %mass in conversion of sodium oxide.    USE - Cover glass. Uses include but are not limited to plasma display panel, field electric display, liquid crystal display, solid-state image sensor, semiconductor laser and solar cell module.    ADVANTAGE - The cover glass has suppressed deterioration of performance of photovoltaic cell from electrical potential difference in the solar cell module containing photovoltaic cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of Cover glass.
NOVELTY - The solar cell (1) has a passivation layer (3) provided on a semiconductor substrate (2) and consisting of a material whose band-gap energy is greater than that of the semiconductor substrate. A nano pillar-shaped semiconductor (5) is provided on the passivation layer. An anti-reflective film i.e. reflection prevention layer (10), is provided between the semiconductor substrate and the passivation layer. The semiconductor substrate consists of alloy of gallium and arsenium, and the passivation layer consists of alloy of aluminum, indium and phosphorus.    USE - Nano pillar-type solar cell.    ADVANTAGE - The solar cell has excellent conversion efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a nano pillar-type solar cell.    Nano pillar-type solar cell (1)    Semiconductor substrate (2)    Passivation layer (3)    Nano pillar-shaped semiconductor (5)    Reflection prevention layer (10)
NOVELTY - The photoelectric conversion element (1) has a flat laminated structure unit (2), by which a compound semiconductor is photo electrically converted and is laminated on a flat form. A mask pattern (3) coats the surface while laminating on the surface of the flat laminated structure unit. A nano pillar structure unit (4), on which the compound semiconductor is photo electrically converted and is laminated while extending in the shape of a nano pillar. The gap of the nano pillar structure unit is filled by a filler layer (5) and reinforces the nano pillar structure unit.    USE - Photoelectric conversion element for use as a solar cell for photo electrically converting the light injected from a nano pillar structure unit.    ADVANTAGE - The flat laminated structure unit, by which a compound semiconductor is photo electrically converted and is laminated on a flat form and the filler layer, with which the gap of the nano pillar structure unit is filled to reinforce the nano pillar structure unit, thus obtains outstanding photoelectric conversion efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a photoelectric conversion element.    Photoelectric conversion element (1)    Flat laminated structure unit (2)    Mask pattern (3)    Nano pillar structure unit (4)    Filler layer (5)
NOVELTY - The cell has a p-type silicon oxide layer (10) arranged to a joining interface of a p-type amorphous silicon-type thin film (3) and a translucent electrically conductive film (4). The p-type silicon oxide layer forms an intentional recombination level in the joining interface, where the p-type silicon oxide layer has film thickness smaller than that of the p-type amorphous silicon-type thin film. The p-type silicon oxide layer includes an optical band gap larger than that of the p-type amorphous silicon-type thin film.    USE - Solar cell i.e. hetero junction-type solar cell.    ADVANTAGE - The cell improves the electro conductivity in the joining interface, reduces the contact resistance of the translucent electrically conductive film, and achieves the reduction of the series resistance, thus achieving the improvement of the photoelectric conversion efficiency of the solar cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a solar cell.    N-type single crystal silicon substrate (1)    I-type amorphous silicon layer (2)    P-type amorphous silicon-type thin film (3)    Translucent electrically conductive film (4)    P-type silicon oxide layer (10)
NOVELTY - The apparatus has mounting unit (10) to which surface roughness is coarser than a glass article (1) to be finished. The surface roughness of the mounting unit is 0.1- 1.0 micrometer. A crystallized glass board is provided with a beta-quartz solid solution or the beta-spodumene solid solution as a primary crystal structure.    USE - Apparatus for conveying glass article such as glass substrate solar cell panel and heat reflective glass.    ADVANTAGE - Since the surface roughness of the mounting unit can be coarser than the glass article to be finished, fixed frictional force can act between the glass article and the mounting unit. Thus, the glass article can stay easily at the place initially mounted in the mounting unit. The position shift of the glass article can be suppressed, even if source gas is sprayed on the glass article. The spray defect of the source gas can be prevented. The film of uniform thickness can be formed on the surface of the glass article.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the motion of the glass article in the film-forming unit of the apparatus.    Glass article (1)    Conveying unit (3)    Roller (9)    Mounting unit (10)    Gas injection unit (12)
NOVELTY - The evaporation source (100A) has a crucible (10) which accommodates a vapor deposition material. An opening unit is provided to release the steam of vapor deposition material which is evaporated. A steam generation unit (1A) is provided with one portion which is immersed in the melting vapor deposition material (11), where the portion's other side is positioned toward the opening unit. A heater (3) is provided to heat the steam generation unit.    USE - Evaporation source of vacuum evaporation system (claimed) for forming thin film device such as organic electroluminescence display, flat panel display (FPD), semiconductor and solar cell.    ADVANTAGE - The steam generation unit has specific portion which is immersed in the melting vapor deposition material, where the portion's other side is positioned toward the opening unit, so that the temperature gradient provided toward the opening unit can be easily attached in order to efficiently and stably carry out steam generation.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the evaporation source.    Steam generation unit (1A)    Heater (3)    Crucible (10)    Melting vapor deposition material (11)    Evaporation source (100A)
NOVELTY - An electrochemical and/or optoelectronic device comprises cobalt complex operatively connected to a dye sensitizer of formula D- pi 1-B- pi 2-A    USE - A dye sensitizer compound for electrochemical and/or optoelectronic device (claimed) such as solar cells.    DETAILED DESCRIPTION - A dye sensitizer compound of formula D- pi 1-B- pi 2-A (I) is new.    D= pi -electron donor group of formula D-25;    R3, R4=optionally branched -(O)m-6-12C alkyl or 6C aryl, linear -O-6-12C alkyl or substituted phenyl group, or -O-n-hexyl or 2,4-di-(n-hexyloxy)phenyl;    A= pi -electron acceptor group;    pi 1, pi 2=optional bridge groups;    B= pi -electron bridge group of formula 2;    n=1-5;    R1, R2=-(O)m-alkyl, -(O)m-cycloalkyl, -(O)m-alkenyl, -(O)m-alkynyl, -(O)m-aryl, or -(O)m-heteroaryl;    m=0-1; and    R1+R2=optionally substituted alkylene, -O-alkylene-O-, annulated aryl or annulated heteroaryl.    An INDEPENDENT CLAIM is included for a dye sensitizer compound of formula D- pi 1-B- pi 2-A.
NOVELTY - Producing hollow platinum or platinum alloy catalyst, comprises forming many core-metal nanoparticles with low melting point in an oxygen free non-aqueous solvent, depositing platinum or platinum alloy onto the metal nanoparticles with low melting point to form a covering made of platinum or platinum alloy, which coats the core-metal nanoparticle, and removing the metal nanoparticles with low melting point from the particles, which are coated with the platinum or platinum alloy, to form many hollow particles of platinum or platinum alloy.    USE - The hollow platinum or platinum alloy catalyst is useful in fuel cell applications.    DETAILED DESCRIPTION - Producing hollow platinum or platinum alloy catalyst, comprises forming many core-metal nanoparticles with low melting point in a non-aqueous solvent free of oxygen, depositing platinum or platinum alloy onto the metal nanoparticles with low melting point to form a covering made of platinum or platinum alloy, which coats the core-metal nanoparticle, and removing the metal nanoparticles with low melting point from the particles, which are coated with the platinum or platinum alloy, to form many hollow particles of platinum or platinum. An ionic liquid is used as a medium at room temperature, when platinum or platinum alloy is deposited on the core metal nanoparticles or the metal nanoparticle core with low melting point is melted or the covering is annealed to improve their catalytic activity.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of the fuel cell comprising the hollow platinum catalysts in at least one of the electrodes.    Fuel cell (10)    Polymeric ion-conducting membrane (12)    Cathode catalyst layer (14)    Anode catalyst layer (16)    Gas channels (22, 24)
NOVELTY - A monovalent copper complex (I) having mononuclear coordinating structure is new.    USE - New monovalent copper complex is used for electronic device e.g. organic electroluminescent device, organic integrated circuit, organic field effect transistor, organic thin-film transistor, organic light-emitting transistor, organic solar cell, organic optical detector, organic optical receiver, organic field quenching device, light-emitting electrochemical cell, organic laser diode, organic electroluminescent device sensor, organic plasma laser light emitting device-organic electroluminescent device and light-emitting electrochemical cell (all claimed).    ADVANTAGE - The monovalent copper complex having favorable luminescence characteristic is economically synthesized by simple method.    DETAILED DESCRIPTION - A monovalent copper complex of formula (I) having mononuclear coordinating structure is new.    A1=coordinating atom-containing neutral bidentate ligand;    B1=two neutral monodentate phosphine ligand or neutral bidentate bridging phosphine ligand;and    Ac-=counterion.    The ligands are neutral, such that monovalent copper coordination compound is ionic, inner boundary has positive charge and outer boundary has divalent negative charged counterion.
NOVELTY - Organic electrolyte solution comprises a metal-ligand coordination compound, where the ligand is an organic phosphate compound.    USE - The organic electrolyte solution is useful as at least one of catholyte and anolyte of a redox flow battery (claimed), where the redox flow battery is useful in a mobile phone, a portable computer, an electric vehicle, a hybrid vehicle, a fuel cell, a super capacitor, and other devices utilizing a large output and high voltage.    ADVANTAGE - The organic electrolyte solution provides the battery with a high energy density and excellent energy efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a redox flow battery comprising a cathode cell (1) comprising a cathode (13) and a catholyte, an anode cell (2) comprising an anode (14) and an anolyte, and an ion exchange membrane (10) disposed between the cathode cell and the anode cell, where at least one of the catholyte and the anolyte is the organic electrolyte solution.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic diagram of a redox flow battery.    Cathode cell (1)    Anode cell (2)    Ion exchange membrane (10)    Cathode (13)    Anode (14)
NOVELTY - Flow-through type manufacturing method of organometallic complex involves using microwave applicator provided with a waveguide furnace having a built-in flow through-type microwave absorption tube installed at angle of 15-35 degrees with respect to the longitudinal direction of the waveguide and having two or more direction reversal portions.    USE - Flow-through type manufacturing method of organometallic complex used as wavelength-conversion material for solar cell.    ADVANTAGE - The method efficiently and economically provides high-purity organometallic complex, with quick production rate and response selectivity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) organometallic complex;    (2) complex phosphorescence material for organic electroluminescent element, which consists of organometallic complex; and    (3) organic pigment sensitization material or wavelength conversion material, which consists of organometallic complex.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic structure of microwave absorption tube.    Inflow port (1)    Outflow port (2)    Direction reversal portion (3)
NOVELTY - The method involves depositing the second protective layer on the oxide semiconductor layer. The oxide semiconductor layer is deposited on the first protective layer. A vacuum is formed in the processing chamber (110) while loading the substrate in the substrate support portion (120) which is installed inside the chamber. The oxide semiconductor layer is selected from indium gallium zinc oxide, indium gallium oxide and ITZO.    USE - Sputtering method for use during manufacture of physical vapor deposition apparatus, display device, semiconductor device, solar cell or organic lighting apparatus etc.    ADVANTAGE - The uniform thickness of the oxide semiconductor layer can be attained effectively. The perpendicular line smudge is improved to the panel of the LCD apparatus using the oxide semiconductor layer having the uniform thickness. The substrate is stopped in the gravity direction on the parallel direction while reducing the formation of impurity. The deposition time of the oxide semiconductor layer is shortened, since the substrate is moved based on the distance of the sub target. The interfacial property of the oxide semiconductor layer is improved, since the vacuum is not destroyed.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for sputtering device.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the sputtering device.    Sputtering device (100)    Processing chamber (110)    Substrate support portion (120)    Substrate drift unit (140)    External power supply (150)
NOVELTY - The device has an ICP coil that is reeled in the exterior wall of plasma reaction portion (200). An injection nozzle (110) is arranged in a gas inlet (100) which is positioned at the upper end of the reactor. A cooling portion (300) is arranged for cooling the generated silicon nano particle. A collecting portion (400) is arranged for collecting cooled particle piled up in a mesh filter.    USE - Device for manufacturing silicon nano particle (claimed) used as photoelectric conversion/optical transform material for solar cell and LED.    ADVANTAGE - The particle agglutination formation can be prevented. The silicon nano particle is uniformly generated within the reactor, and the production yield of silicon nano particle is improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon nano particle manufacturing device.    Gas inlet (100)    Injection nozzle (110)    Plasma reaction portion (200)    Cooling portion (300)    Collecting portion (400)
NOVELTY - A fullerene is synthesized by using combination of halogenated compound and trivalent phosphine compound which is triphenylphosphine.    USE - Synthesis of fullerene for ultrahard material, superconducting material (all claimed), optical material, solar cell, or other thermally conductive materials.    ADVANTAGE - Process is simple and reduces water and energy consumption, and thermal power generation achieves zero carbon emissions.    DETAILED DESCRIPTION - A fullerene is synthesized by using combination of halogenated compound of formula MX4, preferably MCl4 and trivalent phosphine compound which is triphenylphosphine.    M=C, Si, Ge, Ti, Pb, Sn, S, and other elements; and    X=F, Cl, Br, or I.    An INDEPENDENT CLAIM is included for synthesis polymer or supramolecular polymer which involves reacting combination of carbon dioxide (CO2) or carbon monoxide (CO) with water or methanol under strong alkali condition.
NOVELTY - Manufacture of gas-barrier film (10) involves forming gas-barrier layer (1) by coating composition containing a solvent, polysilazane and an amine compound, on surface of base material (0), drying, and irradiating vacuum-ultraviolet light. The content of solvent having boiling point of 70-110 degrees C is 20-50 %mass. Hansen solubility parameter value distance of the solvent on the base material is 8-14.    USE - Manufacture of gas-barrier film used for organic light-emitting diode display. Uses include but are not limited to organic electroluminescent element, sealing material of construction, organic light-emitting diode element, solar cell, liquid crystal, liquid crystal display element, foodstuffs, pharmaceutical, solar cell element, light-emitting element, solar cell element, etc.    ADVANTAGE - The method enables manufacture of gas-barrier film having excellent smoothness, flexibility, and cutting processing stability, and productivity. The gas-barrier film provides lightweight organic light-emitting diode display having excellent durability and visibility. The crack of barrier layer of gas barrier film and base material is suppressed.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of gas-barrier film.    Base material (0)    Gas-barrier layers (1,2)    Protective layer (3)    Gas-barrier film (10)
NOVELTY - Preparation of metal nanocomposite material comprises mixing transition metal chalcogenide compound and n-butyllithium under argon gas at room temperature, adding pure water, centrifugally purifying to obtain dispersion; preparing reducing agent solution; preparing stabilizing agent solution; preparing metal ion solution; putting aqueous dispersion into reaction container, adjusting pH, adding reducing agent and stabilizing agent, adding metal ion solution, and ice bathing or performing microwave hydrothermal method.    USE - Method for preparing metal nanocomposite material (claimed) used for improving photoelectric property of two-dimensional transition metal chalcogenide, super capacitor, fuel cell, and biosensor.    DETAILED DESCRIPTION - Preparation of metal nanocomposite material comprises mixing transition metal chalcogenide compound and n-butyllithium at a mole ratio of 1:1-1:12 under argon gas at room temperature for 12-48 hours, adding pure water to obtain the two-dimensional transition metal chalcogenide nano-sheet with single layer or multiple layers, centrifugally purifying to obtain dispersed single layer or multiple layers of two-dimensional transition metal chalcogenide nano-sheet dispersion; weighing reducing agent, preparing into 10- 100 mmol/L reducing agent solution; preparing 10-100 mmol/L stabilizing agent solution; adding metal salt in ultra pure water, preparing into 10-100 mmol/L metal ion solution; putting aqueous dispersion into reaction container, adjusting pH to 8-9, adding reducing agent and stabilizing agent into reaction vessel, adding metal ion solution, and ice bathing or performing microwave hydrothermal method.
NOVELTY - Wafer cleaning composition comprises: an acrylic copolymer containing a monomer (I) and monomer (II); amine-based compounds; an inorganic base, organic base or its mixtures; and water.    USE - The wafer cleaning composition is useful for ingot cutting process (claimed) during manufacturing process of a wafer of a semiconductor device and solar cell.    ADVANTAGE - The composition has excellent stain removal power, and effectively prevents etching of the wafer surface during washing of the wafer.    DETAILED DESCRIPTION - Wafer cleaning composition comprises: an acrylic copolymer containing a monomer of formula (I) and monomer of formula (II); amine-based compounds; an inorganic base, organic base or its mixtures; and water.    R1, R3 = H or CH3;    R2 = H or COOR7;    R7 = H or monovalent cation;    R4 = H or COOR8;    R8 = H or monovalent cation;    R5 = 1-8C-alkyl or phenyl;    R6 = 1-8-alkylene; and    X, Y = H or a monovalent cation.    An INDEPENDENT CLAIM is included for manufacturing a semiconductor device comprising cleaning the wafer using wafer cleaning composition after cutting an ingot.
NOVELTY - Catalyst comprising mesoporous carbon structure doped with phosphorus atom, is new.    USE - The catalyst is useful for oxygen reduction reaction in fuel cell (all claimed).    ADVANTAGE - The catalyst can be simply, rapidly and economically prepared with excellent electrocatalyst activity, improved stability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a fuel cell comprising a cathode catalyst; and    (2) preparing catalyst.
NOVELTY - The device has an air outlet having inner cavity that is divided into upper half portion and lower half portion. The upper half portion and lower half portion are provided with funnel structure. An outer wall of detachable nozzle is provided with a lug boss. An air inlet pipeline is fixedly connected with an air inlet. The air inlet and the air outlet are detachably connected with each other. The gas of air inlet pipe is entered into a buffer cavity of the air inlet, such that the air is sprayed on an upper substrate.    USE - Device for manufacturing atomic layer deposited thin-film used in micro-nano electronic device and solar battery.    ADVANTAGE - The efficiency of atomic layer deposited thin-film manufacturing device can be improved. The atom layer deposited thin-film can be manufactured quickly.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the device for manufacturing atomic layer deposited thin-film.    Detachable nozzle (201)    Cavity support frame (202)    Substrate table (204)    Temperature control device (205)    Moving platform (206)
NOVELTY - A 9,9'-bifluorenylidene organic semiconductor material is new.    USE - A 9,9'-bifluorenylidene organic semiconductor material for preparing organic field effect transistor, organic solar cell, and organic electroluminescent device (all claimed).    ADVANTAGE - Product has good photoelectric property, is easy to modify, and improves processability and solubility.    DETAILED DESCRIPTION - A 9,9'-bifluorenylidene organic semiconductor material of formula (I) is new.    A=aromatic derivative e.g. benzene, biphenyl, thiophene, bithiophene, condensed thiophene, fluorene, carbazole, thieno cyclopentadiene, thieno silole, benzobithiophene, fluorene indole, indolocarbazole, benzothiadiazole, naphthalene thiadiazole, benzotriazole, quinoxaline, pyrrole dione, thiophene-containing carbon-carbon double bond, or carbonitride;    x=0-99%;    y=1-100%;    x+y=100%;    M=1-20C cyclic alkyl; and    n=0-1000.    An INDEPENDENT CLAIM is included for preparation of 9,9'-bifluorenylidene organic semiconductor material of formula (I).
NOVELTY - The polycrystalline silicon chip comprises crystal grains having long and short diameter. The chip has a diameter of less than 3, and an area of greater than 25%. The roundness of the crystal grain is 0.4-10.    USE - The polycrystalline silicon chip is useful as substrate in a solar cell.    ADVANTAGE - The polycrystalline silicon chip is eco-friendly, has low energy consumption, reduces the defect density, and improves the open-circuit voltage and convert the efficiency of solar cell.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a polycrystalline silicon ingot comprising the chip; and    (2) producing the polycrystalline ingot.
NOVELTY - The battery has silicon substrate (100) that is provided with light receiving surface (102) and non-light receiving P-type and N-type regions (104,106). A P-type and N-type area bus electric conduction belts are arranged on non-light receiving surface of Bragg reflection layer (200). The Bragg reflection layer is formed with Bragg reflection films which are overlapped along thickness direction of crystalline silicon battery. The refractive index of silicon nitride and titanium dioxide materials is greater than the refractive index of silicon dioxide material.    USE - Back contact crystalline silicon battery used in solar power generation industry.    ADVANTAGE - The photoelectric conversion efficiency of the back contact crystalline silicon battery can be effectively improved. The light energy utilization efficiency of the battery can be effectively improved. The physical intensity of the crystalline silicon battery can be enhanced.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a method for treating non-light receiving surface of back contact crystalline silicon battery; and    (2) a method for preparing back contact crystalline silicon battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the back contact crystalline silicon battery.    Silicon substrate (100)    Light receiving surface (102)    Non-light receiving P-type region (104)    Non-light receiving surface N-type region (106)    Bragg reflection layer (200)
NOVELTY - Trifluoromethyl group-containing aromatic diamine monomers selected from 4,4'-(5,5'-sulfonylbis(3',5'-bis(trifluoromethyl)biphenyl-5,2-diyl))bis(oxy)dianiline (I) and 3,3'-(5,5'-sulfonylbis(3',5'-bis(trifluoromethyl)biphenyl-5,2-diyl))bis(oxy)dianiline (II) are new.    USE - In the preparation of high fluorine-containing copper-cladded polyimide plate; in the preparation of high performance high molecular weight material; in microelectronic package, a liquid crystal display orientation, solar battery substrate, and gas separation membrane and so on.    ADVANTAGE - The polyimide prepared using the monomer has excellent dissolving ability, low dielectric constant and high thermal stability. The monomer shows good dissolving ability, high optical transparency and low color, low dielectric constant and excellent water absorption performance. The monomer has relatively simple synthesis route, improves dielectric property of polyimide, and improves optical performance and film-forming property.    DETAILED DESCRIPTION - Trifluoromethyl group-containing aromatic diamine monomers selected from 4,4'-(5,5'-sulfonylbis(3',5'-bis(trifluoromethyl)biphenyl-5,2-diyl))bis(oxy)dianiline of formula (I) and 3,3'-(5,5'-sulfonylbis(3',5'-bis(trifluoromethyl)biphenyl-5,2-diyl))bis(oxy)dianiline of formula (II) are new. An INDEPENDENT CLAIM is included for preparation of the monomer.
NOVELTY - The method involves doping an impurity atom such as copper and magnesium, into a sensitizer assembled quantum point sensitized solar cell. The sensitizer assembled quantum point sensitized solar cell is contained with magnesium impurity atom soluble salt solution.    USE - Solar cell copper-doped/magnesium-doped cadmium sulfide co-sensitizing agent preparation method.    ADVANTAGE - The method enables operating the sensitizer assembled quantum point sensitized solar cell in simple and easy manner at low cost and improving application range of a co-sensitizing agent.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical illustration of a solar cell copper-doped/magnesium-doped cadmium sulfide co-sensitizing agent preparation method.'(Drawing includes non-English language text)'
NOVELTY - The method involves performing rear wet etching of a silicon wafer. The silicon wafer is put into a diffusion furnace. Nitrogen, oxygen and boron source are introduced for a silicon wafer process surface deposition. A rear surface of a silicon chip is provided at a raising temperature to preset temperature. The nitrogen is introduced in a cooling process to obtain boron diffusion of a rear sheet.    USE - N-type silicon chip boron diffusion method for a crystal silicon solar cell (claimed).    ADVANTAGE - The method enables reducing a surface of the silicon sheet of boron atom concentration, so as to reduce composite rate and crystal lattice damage of a surface of a resistance standard deviation (STDEV) control at about 2 degree Celsius. The method enables improving efficiency of a battery, avoiding generation of multi-boron-silicon glass (BGS), and saving cost.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a manufacturing method for a crystal silicon solar cell    (2) a crystal silicon solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating an N-type silicon chip boron diffusion method.
NOVELTY - The method involves placing a silicon wafer into a diffusion furnace after performing the wet etching process, so that the boron, oxygen and nitrogen are deposited on the surface of the silicon wafer. The deposition surface of the silicon wafer is heated to the preset diffusion temperature, so that the diffusion of oxygen and nitrogen is promoted. The diffused oxygen and nitrogen is cooled after cooling the silicon wafer surface.    USE - Method for diffusing boron into N type silicon wafer during manufacture of crystalline silicon solar cell (claimed).    ADVANTAGE - The boron atom concentration on the surface of the silicon wafer can be reduced by performing the deposition diffusion process. Hence, the crystal lattice damage can be prevented and the sheet resistance standard deviation (STDEV) can be controlled at about 2 degrees centigrade. The uniformity of the boron diffusion resistance can be improved. Hence, the conversion efficiency of the crystalline silicon solar cell can be improved. The consumption of the boron source can be reduced. Hence, the generation of excessive borosilicate glass (BGS) can be avoided and the cost required for performing the diffusion process can be saved.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a method for manufacturing crystalline silicon solar cell; and    (2) a crystalline silicon solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram illustrating the process for diffusing boron into N type silicon wafer.
NOVELTY - The method involves performing rear wet etching of a silicon wafer. The silicon wafer is put into a diffusion furnace at a 890-920 degrees centigrade. Nitrogen, oxygen and boron are introduced into a silicon wafer surface for taking deposition. A rear diffusion stage is deposited on a surface of the silicon wafer under the protection of nitrogen atmosphere. Temperature is raised to preset temperature for boron diffusion, and rear oxidation stage of a boron diffused silicon chip is performed to obtain rear boron diffusion of the silicon chip.    USE - N-type silicon chip boron diffusion method for a crystalline silicon solar cell (claimed).    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a manufacturing method for a crystalline silicon solar cell    (2) a crystalline silicon solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating a N-type silicon chip boron diffusion method for a crystalline silicon solar cell.
NOVELTY - Preparing a solar cell antireflection film includes depositing a layer of silicon nitride film of the wafer surface in the silicon nitride film; depositing a layer of silicon nitride film, and introducing nitrogen oxide gas; forming silicon nitride and silicon oxide mixed film; and forming layer on the surface of the silicon wafer, medium transition from silicon nitride to silicon oxide transition of solar cell antireflection film.    USE - Method for preparing solar cell antireflection film.    ADVANTAGE - The method improves battery current and enhances photoelectric conversion efficiency of the cell.    DETAILED DESCRIPTION - Preparing a solar cell antireflection film comprises:    (A) depositing a layer of silicon nitride film of the wafer surface having a refractive index of 2.3-2.5, and adjusting the ratio of x, y and z values of SixNyHz in the silicon nitride film;    (B) depositing a layer of silicon nitride film having refractive index of 2-2.08, and introducing nitrogen oxide (NOx) gas;    (C) forming silicon nitride and silicon oxide mixed film to reduce the film refractive index to 1.75-1.85; and    (D) forming layer on the surface of the silicon wafer having a refractive index of 2.3-2.5, gradual transition to 1.75-1.85, medium transition from silicon nitride to silicon oxide transition of solar cell antireflection film.
NOVELTY - The method involves mixing the composition of CuAlhMxQ2 material, where M is any one of tin, antimony, germanium, titanium, vanadium, chromium, Manganese, iron, copper, nickel and zinc, and Q equal to S and/or Se, and x is not less than 0 and 0.1.    USE - Thin film solar cell material preparation method.    ADVANTAGE - The method enables avoiding generation of open-circuit voltage.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating thin film solar cell material preparation method. '(Drawing includes non-English language text)'
NOVELTY - The battery has an emitter region formed as an II type hetero-junction window layer made of semiconductor material, where thickness of the hetero-junction window layer is 10 to 50nm. The thickness of the emitter region is 4 to l00nm. The hetero-junction window layer uses n-type gallium-arsenic-phosphorus (GaAsP), and the emitter region uses n-type aluminum-gallium-indium-phosphorus (AlGalnP).    USE - Solar battery.    ADVANTAGE - The battery solves the problem of window layer material in super-wide band gap, and improves multi-junction efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a solar battery.
NOVELTY - The method involves pre-processing a silicon chip in a microwave field of 1.0 Giga Hertz to 1.25 Giga Hertz in 4 to 10 minutes, and adding SiH4 in a reaction chamber at temperature range of 180 degrees centigrade to the 250 degrees centigrade. A surface of the silicon chip is processed by plasma chemical vapor deposition process to form a-S1: H thin film surface of the silicon chip. The a-S1: H thin film surface is provided with SiNx: H film. The thickness a-S1: H thin film surface is 8nanometer to 20nanometer.    USE - Method for preparation of a crystalline silicon solar battery passive film (claimed).    ADVANTAGE - The method enables providing sufficient passivation to the surface of the silicon wafer, effectively reducing the impurity on the surface of the silicon wafer and crystal grain boundary defects such as dislocation, and improving output power of polycrystalline silicon solar battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a method for preparation of a crystalline silicon solar battery passive film.
NOVELTY - The method involves forming a passivation layer on a surface of a semiconductor substrate, where thickness of the passivation layer is 500nanometer. An ion injection process is used for forming an impurity source region on a side surface of the semiconductor substrate through the passivation layer. The laser irradiation is used on the impurity source region to obtain a solar battery doped region. The passivation layer is silicon nitride passivation layer, silicon dioxide passivation layer or aluminum oxide layer.    USE - Method for forming a doped region of solar battery.    ADVANTAGE - The method enables increasing the speed of laser for doped region process, ensuring the convenient and fast power regulation, fast reaction speed, realizing the precise control of doping concentration for the doping depth of the doped zone, and simplifying the process condition.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating a solar battery doped region forming method.
NOVELTY - Boron diffusion device comprises a furnace tube (10), which is provided with a first inlet (12), and an exhaust gas bottle (20). The first air inlet is set on upper tube wall of the furnace tube, and the furnace tube is placed in horizontal direction.    USE - Boron diffusion device.    ADVANTAGE - The boron diffusion device reduces boron source consumption amount, and improves conversion efficiency of solar battery.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing crystalline silicon solar cells, which involves:    (A) texturing wafer of silicon chip after placing into the boron diffusion device;    (B) heating the silicon wafer and then introducing boron, oxygen and nitrogen at the same time to obtain boron and oxygen deposited surface of silicon chip; and    (C) reducing temperature of obtained material, and then the silicon wafer surface is passed through water steam for wet oxygen oxidation to obtain desired product.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of boron diffusion device. (Drawing includes non-English language text).    Furnace tube (10)    Furnace door (11)    Air inlets (12,13)    Exhaust gas bottle (20)
NOVELTY - This utility new type claims a polycrystalline silicon chip etching one automatic liquid supplementing device, comprising a box body, a box body is provided with a liquid storage container, a liquid storage container through pipeline connecting in turn and measuring pump is set on liquid outlet of upper box body, the upper box body is further provided with a liquid storage container is connected with the liquid inlet of the metering pump is provided with a power regulator and a timer control by metering pump outlet to a specific rate in the set time. This utility new type silicon wafer wool maker provided automatic liquid supplementation device, can be the independent to finish the automatic fluid infusion function, weighing continuous infusion process, the polysilicon solar battery chain type etching process can be a multi-etching device is compatible with the etching process in chain of, according to Rena, Schmid, and so on device.
NOVELTY - This utility new type claims a one with new-type fine grid line structure of crystalline silicon solar battery, comprising a SiN layer, N type layer and P-type substrate, said upper SiN layer is provided with a main grid line and the thin grid line, the said the thin grid line is set as three areas, which are main grid near the thin grid line area, the middle area and the thin grid line does not end the thin grid line area. This utility new type can maintain or increase a small amount of slurry consumption amount, new-type fine grid line structure is helpful for reducing series resistance.
NOVELTY - A conductive sheet-shaped silver powder is prepared by dissolving solid silver nitrate in ethanol to obtain silver nitrate solution, adding dispersing agent, adjusting pH value using nitric acid and ammonia water, dissolving reducing agent in ethanol to obtain reducing agent solution in which reducing agent is ascorbic acid, hydrazine hydrate, formaldehyde, or sodium borohydride, adding silver nitrate solution and reducing agent solution in slurry ball milling tank, ball milling in which ball milling medium is zirconium oxide, filtering, washing silver ball powder, oven-drying, and sieving.    USE - Preparation of conductive sheet-shaped silver powder for conductive paste (claimed) of solar cell, conductive coating, conductive ink, and conductive glue.    ADVANTAGE - The preparation improves compactness of silver powder and thickness of silver powder, and is time-saving and labor-saving.    DETAILED DESCRIPTION - A conductive sheet-shaped silver powder is prepared by dissolving solid silver nitrate in ethanol to obtain silver nitrate solution with 10-180 g/L concentration, adding dispersing agent in which mass ratio dispersing agent:silver nitrate is 0.1-1:1, adjusting pH value to 1-7 using nitric acid and ammonia water, dissolving reducing agent in ethanol to obtain reducing agent solution with 10-200 g/L concentration in which mass ratio reducing agent:silver nitrate is 0.6-1.2:1 and reducing agent is ascorbic acid, hydrazine hydrate, formaldehyde, or sodium borohydride, adding silver nitrate solution and reducing agent solution in slurry ball milling tank, ball milling at 20-400 rpm rotating speed for 60-180 minutes in which ball milling medium is zirconium oxide with 1-2 mm diameter and mass ratio ball medium:slurry is 1-3:1, filtering, washing silver ball powder multiple times, oven-drying at 40-60 degrees C, and sieving.
NOVELTY - This utility new type relates to a one all-vanadium redox flow battery system, comprising an all-vanadium redox flow battery stack (1) and the constant temperature water bath (8), anode electrolyte storage tank (2) is set on the outer wall upper jacket, jacket is provided with upper heating inlet and outlet of liquid, heating inlet and outlet of the anode liquid constant temperature circulating water pipeline (9) is connected with the constant temperature water bath (8), a cathode electrolyte storage tank (3) is set on the outer wall upper jacket, jacket is provided with upper heating inlet and outlet of liquid, heating inlet and outlet of liquid through the cathode constant temperature circulating water pipeline (10) is connected with the constant temperature water bath (8), the all-vanadium redox flow battery system has high low temperature of starting abiligy. It can maintain the battery system in the temperature of the electrolyte is always greater than 15, to ensure that all-vanadium redox flow battery continuous and efficient operation.
NOVELTY - The material has an indium tin oxide (ITO) upper conductive substrate connected with a Nano-wire array. An indium tin oxide Nano-wire array is covered with upper cuprous sulfide Nano-particles. Length of the indium tin oxide Nano-wire array is about 30 microns. Diameter of the indium tin oxide Nano-wire array is about 50-300 nm. Diameter of the cuprous sulfide Nano-particle is about 5-100 nm. The upper conductive substrate is formed as a tin indium oxide glass or fluorine-doped tin oxide glass.    USE - Tin indium oxide Nano-wire array composite material for a solar battery.    ADVANTAGE - The material realizes copper sulfide (Cu2S) rear ITO Nano-wire array electrode material preparation, and improves platinum (Pt) or gold (Au) and solar battery electrode metal sulfur compound utilization rate.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing tin indium oxide Nano-wire array composite material that is utilized in a solar battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph view illustrating a method for preparing tin indium oxide Nano-wire array composite material.
NOVELTY - The panel has a silicon wafer whose upper surface is located on a silicon nitride film that is provided with a first silicon nitride layer. An upper part of a panel body is formed a second silicon nitride layer that is matched with the first silicon nitride layer. Refractive index of the second silicon nitride layer is greater than refractive index of the first silicon nitride layer, where the refractive index of the second silicon nitride layer is 2.15 to 2.2. Thickness of the first silicon nitride film is 70-90nm.    USE - Solar panel for a solar battery (claimed).    ADVANTAGE - The panel increases the barrier effect of the surface of the silicon nitride film to UV light, decreases UV intensity in the silicon nitride film and prevents silicon nitride film UV activation group to reduce the charge trapping centers, thus reducing the solar cell light-induced attenuation.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a solar battery panel manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating a solar battery panel manufacturing method.'(Drawing includes non-English language text)'
NOVELTY - The method involves spraying deionized water at surface of a silicon sheet to form a water film. A protecting layer is formed at an upper part of the water film. A phosphorosilicate glass part is prepared. The water film and a silicon chip are entered into a hydrogen fluorin acid groove. The hydrofluoric acid groove is filled with hydrofluoric acid liquid medicine, where liquid medicine is hydrofluoric acid. A back part of the silicon sheet and an edge part of the phosphorosilicate glass part are removed. The silicon chip is put into etching solution for etching process.    USE - Silicon solar cell wet etching method.    ADVANTAGE - The method enables stably controlling etching square resistance value and increasing effective area of a PN junction so as to improve converting efficiency of a battery sheet.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a silicon solar cell wet etching method.
NOVELTY - The method involves forming a silicon wafer with a silicon nitride film layer, where thickness of the silicon nitride film layer is about 100 nm, and refractive index of the silicon nitride film layer is 1.9 to 2.4. A P-type polycrystalline silicon chip is formed with an acid etching layer. Ammonia and silane gases are emitted from the acid etching layer of the silicon chip, where standard status of gases is in ratio of 1:10 to 20. The silicon dioxide film layer is formed with a dinitrogen monoxide layer.    USE - Anti-reflecting film-coated solar battery manufacturing method.    ADVANTAGE - The method enables improving reflection intensity, adjusting color difference of battery so as to improve operating efficiency, and improving large-scale production range.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an anti-reflecting film-coated solar battery manufacturing method.
NOVELTY - The method involves forming a silicon base body with a half-mask layer, where the half-mask layer is filled with silicon oxide, silicon oxynitride, silicon nitride or titanium dioxide solution. A crystal silicon battery is formed with a patterned etching layer that is formed with a heavily doped region. An annealing temperature range of a RTP furnace is about 600-1100 degrees Celsius. The half mask layer is formed with a selective doping area. The crystal silicon battery is connected with a side part of a silicon chip, where the half-mask layer is formed with a silicon material surface.    USE - Crystalline silicon solar battery manufacturing method.    ADVANTAGE - The method enables improving annealing efficiency and reducing doping problem in an effective manner.    DETAILED DESCRIPTION - The crystal silicon battery is made of IBC back-contact or PERL/PERT material. The silicon chip is made of single crystal silicon, single crystal or multi-crystal material.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a crystalline silicon solar battery manufacturing method.
NOVELTY - The method involves placing a silicon chip on a hot annealing furnace tube, where temperature of the silicon chip is 600-700 degrees Celsius. An annealing process is performed at high temperature under nitrogen atmosphere for 10-100 seconds. Mixed chlorine oxidation is detected for 30-60 seconds, where thickness of the silicon chip is 2-30 nm.    USE - Method for manufacturing a PN junction of a crystalline silicon solar battery.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for manufacturing PN junction of a crystalline silicon solar battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view illustrating a method for manufacturing a PN junction of a crystalline silicon solar battery.'(Drawing includes non-English language text)'
NOVELTY - The socket has a socket shell orderly connected with a thin film lithium solar battery, a plug and a solar energy receiver. The solar receiver is connected with the thin film solar cell that is fixed into an oil removing and cleaning surface of a socket bottom part. The lithium solar battery is connected with an electric amount display.    USE - Self-power supply solar socket.    ADVANTAGE - The socket is convenient to use and simple in structure, and saves energy consumption, and has wide range of applications.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a self-power supply solar socket.
NOVELTY - The solar battery has a contact surface that is placed between upper and lower surfaces of second transition metal layer (36) of substrate (31). A flat upper surface of contact surface is placed between upper and lower surfaces of first transition metal layer (32). The roughened metal layer of contact surface is placed between lower surface of second roughened surface (42) and upper surface of P-type and n-type semiconductor layers (34,35). The contact surface between upper and lower surfaces of transparent conductive layer (38) of zinc oxide layer (37) is of flat contact surface.    USE - Solar battery.    ADVANTAGE - The photoelectric efficiency of the solar battery can be improved with low material cost. The generating efficiency of the solar battery can be improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the solar battery.    Substrate (31)    Transition metal layers (32,36)    P-type semiconductor layer (34)    N-type semiconductor layer (35)    Zinc oxide layer (37)    Transparent conductive layer (38)    Roughened surface (42)
NOVELTY - The method involves forming a P type semiconductor layer (34) on an upper surface of a roughened metal layer (33). A coarsening treatment is performed for an upper surface of the P-type semiconductor layer. An n-type semiconductor layer (35) is formed on the upper surface of the P type semiconductor layer. A coarsening treatment is performed for an upper surface of the n-type semiconductor layer. A transition metal layer (36) is formed on the upper surface of n-type semiconductor layer, a zinc oxide layer (37) and a transparent conducting layer (38).    USE - Method for manufacturing solar cell.    ADVANTAGE - The generating efficiency of the solar cell is improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the process for manufacturing solar cell.    Roughened metal layer (33)    P type semiconductor layer (34)    N-type semiconductor layer (35)    Transition metal layer (36)    Zinc oxide layer (37)    Transparent conducting layer (38)
NOVELTY - The seal structure is comprised of a steel plate (1), a screw rod (2), a screw cap (3), a spring (4) and a flow channel side plate (5). One side of the flow channel side plate is provided with a spring fixing structure. One end of the spring is installed in the spring fixing structure, while other end is fixedly connected with an inner side of the steel plate. The screw cap is sleeved on the screw rod which is connected with an outer side of the steel plate. The spring is made of carbon or steel.    USE - Seal structure of vanadium redox battery.    ADVANTAGE - The seal structure can improve the leakage sealing performance of the electric stack module effectively, hence the mutual leakages can be avoided. The assembly time of multi-stack module can be reduced due to the high pressing force of the spring. The discharge phenomenon caused by penetration of the solid and liquid particles through the flow channel holes can be avoided.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the seal structure.    Steel plate (1)    Screw rod (2)    Screw cap (3)    Spring (4)    Flow channel side plate (5)
NOVELTY - A nitrogen-doped nonprecious metal catalyst is prepared by mixing sucrose, 6-benzyladenine and iron chloride, adding carbon dioxide and concentrated sulfuric acid to react for 10-15 days, washing, drying, ball milling, and graphitizing under nitrogen protective atmosphere at 600-1000 degrees C for 1-3 hours.    USE - Method for preparing nitrogen-doped nonprecious metal catalyst used in preparation of fuel cell (claimed).
NOVELTY - A bromo-thiophene derivative (I) is new.    USE - Bromo-thiophene derivative used in organic solar cell.    ADVANTAGE - The derivative has good chemical stability and solubility.    DETAILED DESCRIPTION - Bromo-thiophene derivative of formula (I) is new.    R=H or optionally substituted 1-20C alkyl.    An INDEPENDENT CLAIM is included for preparing compound (I).
NOVELTY - A fluorescent carbon dot material is prepared by (1) dissolving water-soluble protein in ultrapure water, adding with ferric nitrate, uniformly mixing with absolute ethanol, subjecting into hydrothermal reaction at 120-200 degrees C for 10-20 hours to obtain fluorescent carbon dot solution; and (2) adding with carbon powder, and performing carbonization reaction under nitrogen gas protection at 600-1000 degrees C for 2-6 hours to obtain modified fluorescent carbon dot material.    USE - Method for preparing fluorescent carbon dot material used as oxygen reduction reaction catalyst (claimed) in e.g. fuel cell.    ADVANTAGE - The method can provide fluorescent carbon dot material having excellent fluorescence characteristic compared with traditional fluorescent carbon dot material. Further, the obtained fluorescent carbon dot material exhibits good oxygen reduction catalytic property when tested as catalyst for the oxygen reduction reaction at the cathode of solid oxide fuel cell.
NOVELTY - The coating method involves using tubular PECVD depositing anti-reflection film. The tubular PECVD film plating time in a furnace body from the furnace outlet temperature to a furnace tail are 38 to 420 degrees Celsius and 370 to 410 degrees Celsius at 360 % of 400 volts.    USE - Coating method for coating high shunt resistance crystalline silicon solar cell.    ADVANTAGE - Reduces resistance of crystal silicon solar cell by using tubular PECVD coating to improve parallel resistance of crystal silicon solar battery.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic block diagram of a tubular PECVD device. (Drawing includes non-English text).
NOVELTY - Preparation of low-temperature liquid phase zinc oxide nanocone array comprises directly suspending cleaned substrate in growth solution in water bath to obtain zinc oxide nanocone array. The growth solution comprises potassium hydroxide, zinc nitrate, and zinc hydroxide.    USE - Method for preparation of low-temperature liquid phase zinc oxide nanocone array (claimed) used for superhydrophobic surface, detector, piezoelectric transducer, UV laser, and solar battery.    ADVANTAGE - The method is environmentally friendly and suitable for industrial production, and has simple equipment and process, low energy consumption, and stable performance.
NOVELTY - Preparation of crystalline silicon solar battery involves forming P-type semiconductor by doping silicon chip in boron, performing chemical vapor deposition, physical vapor deposition or atomic layer deposition to boron-doped silicon, plating nickel on silicon chip surface, annealing at 950-1100 degrees C, cooling to 900-800 degrees C, forming N-type semiconductor by doping silicon chip in phosphorus, and performing deposition at 860 plus minus 30 degrees C for 10-60 minutes.    USE - Method for preparing crystalline silicon solar battery (claimed).    ADVANTAGE - The method saves time, and produces high-quality solar battery.
NOVELTY - Polishing monocrystalline silicon sheet comprises polishing front and back surface of silicon layer using polishing solution.    USE - Method for polishing monocrystalline silicon sheet used for reducing surface defect, enhancing flatness of silicon sheet, improving open-circuit voltage of solar battery, and enhancing long wave band reflectivity of sunlight.    ADVANTAGE - The method is efficient, and reduces manufacturing cost.
NOVELTY - The structure has an aluminum oxide thin film layer (2) adhered on a P-type doped layer of a silicon dioxide thin film layer (3). The silicon dioxide thin film layer is adhered on an upper surface of a silicon chip substrate (5). A silicon nitride thin film layer (1) is adhered on an upper surface of the aluminum oxide thin film layer. Refractive indices of the silicon nitride thin film layer, the aluminum oxide thin film layer and the silicon dioxide thin film layer are 1.9-2.4, 1.55-1.65 and 1.4-1.5, respectively. Thickness of the silicon nitride thin film layer is 20-150mm.    USE - Thin film passivation structure for a crystalline silicon solar cell.    ADVANTAGE - The structure can effectively passivate a silicon sheet P-type doped surface so as to achieve better interface passivation effect.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film passivation structure.    Silicon nitride thin film layer (1)    Aluminum oxide thin film layer (2)    Silicon dioxide thin film layer (3)    Silicon chip substrate (5)
NOVELTY - The substrate has a P-type crystal silicon main body (10) whose upper surface is provided with a doped germanium formed unit (110). Thickness of the P-type crystal silicon main body is 1-20 mm.    USE - Germanium silicon substrate for a solar cell (claimed).    ADVANTAGE - The substrate improves working performance of a solar battery, and has better light attenuation effect.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a germanium silicon substrate preparation method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a germanium silicon substrate.    P-type crystal silicon main body (10)    Doped germanium formed unit (110)
NOVELTY - The material comprises an intermediate absorbing material unit combined with a chalcopyrite structure compound. The material unit is selected from chemical composition of copper, gallium, indium, germanium, tin, sulfide or selenide. A doping element is incorporated in the material unit to form single-independent energy level between a valence band and a conduction band in the structure compound and an intermediate zone. The material unit adopts a towanite structure with a tetragonal crystal system. Valence state of the structure compound and valency of the doping element are same.    USE - Chalcopyrite structure combined intermediate absorbing material for a solar cell.    ADVANTAGE - The doping element is utilized for improving energy level absorption of the material, so that the material exhibits wide range of spectral absorption characteristics and realizes near-infrared light photoelectric conversion sub-effect. The material implements rational design, and can be prepared by utilizing low-cost and easily-available raw materials in an easy and simple manner. The material realizes optical band gap changing effect in the intermediate zone so as to realize wide application range of the solar cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a chalcopyrite structure combined intermediate absorbing material preparation method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an intermediate zone of a chalcopyrite structure combined intermediate absorbing material. '(Drawing includes non-English language text)'
NOVELTY - The method involves performing a soaking process in diluted hydrochloric acid. A cleaning and drying process is performed in the diluted hydrochloric acid. Stannous chloride is dissolved in mixed solution of glycol and triethanolamine. A spin coating process is performed in an upper part of a float glass substrate. A thin film sample metal pre-fabricated layer is placed in a center part of a quartz tube. Vulcanizing temperature of the quartz tube is 460-540 degrees.    USE - Material-zinc-tinsulfur solar battery absorbing layer thin film manufacturing method.    ADVANTAGE - The method enables selecting better vulcanization temperature under vulcanizing condition.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a material-zinc-tinsulfur solar battery absorbing layer thin film manufacturing method.'(Drawing includes non-English language text)'
NOVELTY - The method involves mounting two ends of a to-be-stretched welding strip on two traction devices through a clamping device i.e. pneumatic clamping device, respectively (S10). The to-be-stretched welding strip is processed by welding treatment by moving the traction devices along back and forth extending directions (S20). Reciprocating motion between the traction devices is determined, where moving speed of each traction device is 100-500 mm/min. The to-be-stretched welding strip is arranged on a protective layer and made of copper, aluminum, tin, iron or nickel material.    USE - Solar battery welding strip processing method.    ADVANTAGE - The method enables effectively processing the to-be-stretched welding strip of a solar battery plate without any heat stress, improving quality of the solar battery plate and reducing waste product rate.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a solar battery welding strip processing method.'(Drawing includes non-English language text)'    Step for mounting two ends of a to-be-stretched welding strip on two traction devices through a clamping device (S10)    Step for processing a to-be-stretched welding strip by welding treatment by moving traction devices along back and forth extending directions (S20)
NOVELTY - Preparation of phosphorus-doped silicon sheet comprises heating silicon sheet, purifying, depositing and diffusing phosphorus and cooling. Phosphorus source compound is phosphoryl chloride. Reacting phosphoryl chloride and oxygen with decreasing volume ratio.    USE - Method for preparing phosphorus-doped silicon sheet used for manufacturing solar cell (claimed).    ADVANTAGE - The method has better electrical parameters and improves conversion efficiency of solar battery.
NOVELTY - The method involves arranging a surface film layer of a stainless steel bipolar plate. The stainless steel bipolar plate is fixed in a sealed container. The container is filled with gas. Temperature of the container is maintained at 120-180 degrees Celsius. A micro-area generating oxide layer is formed with the surface film layer.    USE - Fuel cell metal bipolar plate surface modified layer non-micro-processing method.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a fuel cell metal bipolar plate surface modified layer non-micro-processing device.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a fuel cell metal bipolar plate surface modified layer non-micro-processing device.
NOVELTY - This utility new type claims a one solar battery surface passivation layer structure, the structure using silicon dioxide passivation film and silicon nitride passivation film is composed of laminated passivation film structure so as to overcome the interface defect density of silicon nitride passivation film and high hydrogen bond is not stable of, solves the problem that the silicon dioxide passivation film metal ion-blocking abiligy, easy absorbing water, light of reducing reverse effect is not good and so on, and the thickness of silicon dioxide passivation film optimized for 10-40 nm, the light absorption of the base up to greatly increase passivation effect of silicon material for electro-active impurities and surface defect, the surface composite rate of photon-generated carrier is obviously reduced, the conversion efficiency of crystalline silicon is increased by 0.3%.
NOVELTY - Corn residue is washed and dried at 600-1000 degrees C, carbonized and milled in a milling tank for 12 hours. The milled corn is soaked in nitric acid solution for 20-24 hours and washed with distilled water to neutralize. Ferric chloride solution is added to the neutralized material, and the activated material is dried and milled for 6-12 hours at 600-1000 degrees C under nitrogen protection, graphitized and immersed in nitric acid to removed iron. The graphitized material is washed to neutral and dried to obtain non-noble metal catalyst.    USE - Manufacture of non-noble metal catalyst used for oxygen reduction in fuel cell.    ADVANTAGE - The method produces catalyst having excellent oxygen reduction property, has high catalytic activity, is economical, environmentally-friendly and safe.
NOVELTY - Preparation of wet carbon dioxide synthesis gas comprises catalytically reacting wet carbon dioxide as cathode and helium or inert gas as anode into micro-tubular catalytic membrane reactor with electrolytic cell as its external power supply.    USE - Method for preparation of wet carbon dioxide synthesis gas (claimed).    ADVANTAGE - The method uses a membrane reactor having high volume power density, mass and heat transfer efficiency, and mechanical properties, small volume, and easy insulation and sealing properties.    DETAILED DESCRIPTION - Preparation of wet carbon dioxide synthesis gas comprises catalytically reacting wet carbon dioxide as cathode and helium or inert gas as anode into micro-tubular catalytic membrane reactor with electrolytic cell as its external power supply. The catalytic reaction is carried out through co-spinning-co-sintering improved phase inversion method to obtain three-layer composite ceramic microtubes, and impregnating into anode. The co-spinning is carried out through tetracyclic hole spinneret mold while co-sintering is carried out through one-step molding. The microtubes comprise metal-ceramic collector layer, anode functional layer, dense electrolyte outer layer, and gradient pore structure. An INDEPENDENT CLAIM is include for a tetracyclic hole spinneret mold device comprising inner orifice (1), upper spacer cover (2), upper spacer (3), bath gel (4), bottom cover (5), middle spacer, lower spacer, bottom outlet, outer feed hole, middle layer orifice, outer channel, middle layer channel, inner channel, and gel bath channel.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of tetracyclic hole spinneret mold device.    Inner orifice (1)    Upper spacer cover (2)    Upper spacer (3)    Bath gel (4)    Bottom cover (5)
NOVELTY - Preparation of animal manure nitrogen-carbon material involves naturally drying animal manure, carbonizing carbon material under nitrogen, pulverizing in a ball mill with nitric acid solution, stirring for 20-24 hours, washing with deionized water, drying, adding iron(III) chloride and ethanol for 0.5-1 hours, drying for 6-8 hours, and carbonizing under nitrogen.    USE - Preparation of animal manure nitrogen-carbon material used for oxygen-reduction catalyst (claimed) for catalytic reaction of oxygen reduction in fuel cell.
NOVELTY - The method comprises carrying out physical vapor deposition coating on the metal bipolar plate, directly plugging holes on the metal bipolar plates, pumping air from a vacuum coating equipment chamber to the holes through an open valve at internal pressure of 0.1-10x 10-3 Pa and temperature of 100-180 degrees C, pumping off an intake valve, adjusting the pressure in the holes to 1.1asterisk10-2 to 105 Pa for 30 minutes, reducing the temperature to 20-50 degrees C, opening the vacuum chamber to remove the bipolar plate to complete coating, clogging ad oxidation process.    USE - The method is useful for surface modification of a metal bipolar plate hole blocking layer in a fuel cell (claimed).    ADVANTAGE - The method is capable of surface modification of a metal bipolar plate hole blocking layer in a fuel cell in a cost effective manner with less energy consumption, thus ensuring the conductivity and improving corrosion resistance and service life of the plate.
NOVELTY - The OTB device comprises five sources. An electric current for the first, second and third sources are set to be 85-90A. An electric current for the fourth and fifth sources is set to be 95-100 A. The first, second and third sources deposit silicon in a film. The fourth and fifth sources deposit hydrogen in the film.    USE - The OTB device is useful for depositing a silicon nitride film using a gradient change method (claimed), where the silicon nitride film is used in a solar cell.    ADVANTAGE - The OTB device improves passivation property and anti-reflection property of the film thus improving the efficiency of the solar cell.
NOVELTY - Producing large-area single-layer molybdenum diselenide single chip, comprises cleaning a substrate, introducing molybdenum trioxide and selenium powder into a reaction furnace, vacuumizing the reaction furnace, then filling with inert gas, heating the reaction furnace and then cooling, and removing the substrate to obtain a reaction product.    USE - The method is useful for producing large-area single-layer molybdenum diselenide single chip (claimed), which is useful in a solar battery, FET, a photo-catalytic hydrogen production.    ADVANTAGE - The method enables the production of molybdenum diselenide single chip with good uniformity and high quality.
NOVELTY - Non-alcoholic alkaline solution comprises an alkali solution and texturing additives that are non-alcoholic additives.    USE - The non-alcoholic alkaline solution is useful for texturing a silicon wafer that is useful for manufacturing a plate for a solar cell (all claimed).    ADVANTAGE - The non-alcoholic alkaline solution uniformly textures the silicon wafer so that reflectivity of the wafer is reduced thus increasing conversion efficiency of the solar cell.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) texturing silicon wafer comprising preparing the alkaline solution, cutting a diamond wire into the silicon wafer, etching the silicon wafer using alkaline solution, washing silicon wafer using water and acid and then drying to obtain textured silicon wafer; and    (2) manufacturing a solar battery plate comprising cutting the diamond wire into silicon wafer and then etching.
NOVELTY - An adhesive composition comprises acrylate compound (A), polymerization initiator (B) and filler (C). The acrylate compound (A) contains hydroxyl-containing acrylate compound (A1). The amount of hydroxyl-containing acrylate compound (A1) is 45-83 %mass with respect to 100 %mass acrylate compound (A).    USE - Adhesive composition is used for solar cell module and connecting photovoltaic cell and wiring (all claimed).    ADVANTAGE - The adhesive composition has excellent adhesive strength, and low temperature during thermocompression bonding.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) solar cell module (7), which is obtained by connecting photovoltaic cell (1) and wiring (2) using the adhesive composition; and    (2) connection method of photovoltaic cell and wiring.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of solar cell module.    Photovoltaic cell (1)    Wiring (2)    Ethylene vinyl alcohol sheet (4)    Glass sheet (5)    Solar cell module (7)
NOVELTY - An electroconductive film has smooth meshwork structure having film thickness of 10-1000 nm and containing metals.    USE - Electroconductive film is used for electronic device e.g. display apparatus and solar cell.    ADVANTAGE - The electroconductive film has excellent flexibility, electroconductivity, and can be manufactured efficiently and economically by simple method.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of electroconductive film, which involves coating metal-ion containing solution to support, and carrying out diffusion permeation of reducible gas containing hydrazine in metal-ion containing solution which is applied to support; and    (2) solid surface treatment apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of solid surface treatment apparatus.    Gas containing ammonia (1)    Gas flow pipe (2)    Airflow diffusion portion (3)    Solid conveying apparatus (4)    Coated solution (5)
NOVELTY - Method (M1) of forming a photovoltaic device (50), comprises: processing a precursor layer in at least one step to form a photovoltaic absorber layer; and depositing a transparent material layer (59) loaded with conductive nanopowder or nanoparticles.    USE - The method is useful for forming a photovoltaic device (claimed) which is useful thin-film solar cells.    ADVANTAGE - The method: provides improved photovoltaic devices; utilizes low cost transparent conductor; and provides low-cost, long-lived thin-film solar cells, preferably cells constructed on low-cost metal foils.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method (M2) of forming a photovoltaic device comprising: processing the precursor layer in steps to form the photovoltaic absorber layer; and depositing a smoothing, insulating layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a photovoltaic device.    Photovoltaic devices (50)    Base substrate (52)    Barrier layer (53)    Transparent conductive layer (59)    Transparent electrode (60)
NOVELTY - The full contact twin collection surface solar cell has cells provided such that dual simultaneous insolation and dual connectivity to external electrical circuitry are performed. The top and bottom plates are provided to form the collection surfaces. The plates are formed with n-material layers, bases (5), and p-material layers, to constitute the complete solar cell.    USE - Full contact twin collection surface solar cell.    ADVANTAGE - The increased efficiency is provided over single sided main portion of comparable dimensionality due to increased mounting flexibility over single-sided main portion. The full contact twin solar cell is formed with two cells in one. Thus the cell can generate a greater output than that of a single cell of comparable dimension and construction at certain times during the solar insolation daily cycle. The efficiency per unit area perpendicular to the insolation source is improved, due to the cells employment of full surface area collection at both the top and bottom plates. Since the twin cell configuration utilizes boron phosphorus as a barrier between the top and bottom junctions, the dual collection and distribution are allowed. The flexibility of the external connections enables the construction of multiple solar array panel configurations.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the bottom base of full contact twin collection surface solar cell.    Bottom base (5)
NOVELTY - The collector (100) has a linearly extending receiver (110) comprising solar cells, and trough reflectors (120) comprising respective ends and fixed in position with respect to the receiver. The reflectors are oriented parallel to a long axis of the receiver. A support structure (130) comprises a transverse reflector support (155) extending transversely to a rotation axis (140) beneath the end of one of the reflectors. The reflector support is attached to the ends of the reflectors for supporting the ends at different distances from the receiver, where the receiver comprises coolant channels.    USE - Solar energy collector for use in a concentrating photovoltaic system for providing electricity and heat.    ADVANTAGE - The support structure comprises the transverse reflector support that is attached to the ends of the reflectors for supporting the ends at different distances from the receiver, thus reducing manufacturing cost, enraging easy installation and increasing durability of the system, while improving performance, efficiency and reliability of the system.    DESCRIPTION OF DRAWING(S) - The drawing shows a front perspective view of a solar energy collector.    Solar energy collector (100)    Linearly extending receiver (110)    Trough reflectors (120)    Support structure (130)    Rotation axis (140)    Transverse reflector support (155)
NOVELTY - The method involves obtaining a base layer comprising crystalline silicon. An electron collector is formed on a first side of the base layer, where the electron collector includes a quantum-tunneling-barrier (QTB) layer (204) situated adjacent to the base layer and a transparent conducting oxide (TCO) layer (206) situated adjacent to the QTB layer, the TCO layer has a work function of less than 4.2 electron volt, and the QTB layer has a thickness between 1 and 50 angstroms. A hole collector is formed on a second side of the base layer, where the second side is opposite to the first side.    USE - Method for fabricating a solar cell i.e. crystalline-silicon based heterojunction solar cell. Can also be used for fabricating a p-n junction based solar cell.    ADVANTAGE - The method enables the BSF layer to collect hole current and improve back-side passivation, thus improving solar cell performance by reducing surface recombination. The method enables allowing thermal oxide to be used as a tunneling barrier to provide low dangling bond interface and provide better surface passivation to generate a higher open circuit voltage, thus limiting final short circuit current and reducing absorption loss and surface passivation loss. The method enables providing additional n-type doping to be shallow enough so as to avoid blue blindness.    DETAILED DESCRIPTION - The base layer is one of a mono-crystalline silicon wafer and an epitaxially grown crystalline-silicon thin film. An INDEPENDENT CLAIM is also included for a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a solar cell with a TCO/QTB electron collector.    Solar cell (200)    Substrate (202)    QTB layer (204)    TCO layer (206)    Front-side electrode (210)    Back-side electrode (212)
NOVELTY - The solar cell assembly has a solar cell (101) with an interconnect portion. A bonding layer of eutectic alloy is arranged between an interconnector and the interconnect portion for bonding the interconnector with the interconnect portion. The interconnect portion is formed of a metallic portion (103) and a germanium layer (107) formed over the metallic portion. The interconnector is formed of gold layer at a surface. The bonding layer is formed of eutectic gold-germanium alloy.    USE - Solar cell assembly used in aerospace applications.    ADVANTAGE - Since the eutectic alloy bonding layer is formed at a relatively low temperature, the heat budget can be released and manufacturing process of solar cell assembly can be simplified. Hence, the manufacturing cost can be reduced and the tensile strength of the bond of the interconnector and the interconnect portion can be increased. Thus, the life of the aerospace craft can be increased. Since annealing is done prior to joining the electrode and interconnect portion, the diffusion can be avoided and a good ohmic contact can be formed.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing solar cell assembly.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating a method for manufacturing solar cell assembly.    Solar cell (101)    Metallic portion (103)    Barrier layer (105)    Germanium layer (107)    Precursor layer of interconnector (109)
NOVELTY - The method involves forming a conductive sputtering target by powder metallurgy or a casting process such that an atomic ratio of copper to indium and aluminum and gallium in the target is less than one. The target is arranged on a housing of a planar or cylindrical rotary magnetron, where the target comprises sodium and faces a rotatable coating drum for sputtering material onto a substrate material. The magnetrons is oriented such that a line perpendicular to the target intersects at a substrate (1), where the magnetron is powered by a direct current (DC) power supply.    USE - Method for making a conductive sputtering target that is utilized for large-scale production of a thin-film copper indium/gallium diselenide (CIGS) solar cell.    ADVANTAGE - The conductive sputtering target is formed by powder metallurgy or the casting process such that the atomic ratio of copper to indium and aluminum and gallium in the target is less than one, thus enabling large-scale and economical production of the thin-film CIGS solar cell in a cost-effective manner. The method enables manufacturing of the solar cell without utilizing high temperature toxic gases and toxic wet chemical baths. The method enables manufacturing of the solar cell with improvements in a back contact/reflection layer and elimination of cadmium and disposal of toxic wastes.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a conductive sputtering target.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure of a basic solar cell with a thin zirconium nitride inserted between a CIGS layer and a back conducting/reflecting metal layer.    Substrate (1)    Electrical contact layer (2)    Added barrier layer (2a)    CIGS layer (3)    Semiconductor layer (4)
NOVELTY - The barrier film has vapor deposition material that is heated for base material, and an evaporating particle is generated to pass through in the atmosphere carrying out the ion plating with the high-density plasma. The film thickness of the barrier film is in the range of 5-30 nm. The difference of the maximum value of a water-vapor-permeation rate and minimum value is incorporated to form a gas barrier layer (11) 1 g/m2 day or less. A generation unit is provided for generating evaporating particle to resistive heating.    USE - Gas barrier film used for wrapping materials for export such as medical pharmaceutical, cladding of inkjet tank element, and resin, cladding for industrial materials called solar cell back sheet, and packaging material of foodstuff.    ADVANTAGE - Since film thickness of the barrier film is in specific range, the difference of the maximum value of a water-vapor-permeation rate and minimum value is incorporated to form a gas barrier layer, the gas barrier performance of the gas barrier film can be improved, so as to reduce the smaller deterioration of the gas barrier performance due to decrease in film thickness resulting from raise of the production rate.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the structure of the gas barrier plastic film.    Plastic film (10)    Gas barrier layer (11)
NOVELTY - The imprint mold (130) has a main portion which is provided with a substrate (133). A corrugated pattern (132) for transferring the pattern is formed in the upper surface of the substrate. A peeling support pattern (131) is provided in the upper surface location of the substrate adjacent to the corrugated pattern, so as to support peeling with the transfer material and the corrugated pattern. The surface area of the peeling support pattern is smaller than the surface area of the corrugated pattern.    USE - Imprint mold for forming corrugated pattern in pattern molded object (claimed) e.g. photomask. Can also be used for semiconductor device, optical element, wiring circuit, hard disk, optical media, tip for assaies, microneedle, biosensor, cell culture board, test probe, sample holing material, display panel, panel component, solar cell, fuel cell, microchannel, microreactor, and microelectromechanical systems (MEMS) device.    ADVANTAGE - The peeling of the transfer material can be performed smoothly with the imprint mold, without damaging the inferior transfer of the corrugated pattern to the transfer material. Hence, the generation of pattern collapse can be prevented and the high quality pattern can be formed in the pattern molded object.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a pattern molded object; and    (2) a method for manufacturing imprint mold.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional views of the imprint mold.    Imprint mold (130)    Peeling support pattern (131)    Corrugated pattern (132)    Substrate (133)
NOVELTY - A raw material oil (CC) comprises a saturated 6-membered-ring component as main component. In hydrogenated state, the oil contains saturated 6-membered-ring component chosen from cyclohexane, methyl cyclohexane, and/or dimethylcyclohexane. The ratio of dimer of saturated 6-membered-ring component is less than 0.3 %mass.    USE - Raw material oil is used in dehydrogenation systems (claimed) used for producing hydrogen used in petroleum refining, chemical industries, fuel cells, fuel electric vehicles, and distributed power supplies.    ADVANTAGE - The raw material oil enables stable, economical and efficient manufacture of hydrogen with a hydrogen recovery rate of 90 mol% or more, suppressing decline in recovery, without requiring a special driving device.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for dehydrogenation system provided with a dehydrogenation device (BB) which dehydrogenates the raw material oil and produces hydrogen.    DESCRIPTION OF DRAWING(S) - The drawing shows a conceptual view of the dehydrogenation system. (Drawing includes non-English language text)    Heated gas (AA)    Dehydrogenation device (BB)    Raw material oil (CC)    Hydrogen and dehydrogenated product (DD)
NOVELTY - A base layer comprising crystalline silicon (c-Si) is obtained. A hole collector is formed on a first side of the base layer. The hole collector contains quantum-tunneling-barrier (QTB) layer (204) situated adjacent to the base layer and a transparent conducting oxide (TCO) layer (206) situated adjacent to the quantum-tunneling-barrier layer. The transparent conducting oxide layer has a work function of 5 eV or more. An electron collector is formed on a second side of the base layer which is opposite the first side, to fabricate the solar cell (200).    USE - Fabrication of solar cell used for generating photo current.    ADVANTAGE - The method enables fabrication of solar cell having excellent energy conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of solar cell.    Solar cell (200)    Substrate (202)    Quantum-tunneling-barrier layer (204)    Transparent conducting oxide layer (206)    Back surface field layer (208)
NOVELTY - The fiber holding apparatus such as bobbin apparatus (100A) has bobbin containing main unit (71) and circular plate (72) for holding a wound carbon fiber bundle (f1). A releasing bar (80) applies force to fiber paid out from the bobbin. A slack suppression bar (90) applies tension to the fiber paid out from bobbin. An extension unit (74) extends from the bobbin and holds releasing bar and slack suppression bar in an integrated manner such that the releasing bar and slack suppression bar are arranged in sequence toward the downstream of feeding-out direction (DF) of fiber bundle.    USE - Fiber holding apparatus such as bobbin apparatus used in high pressure gas tank manufacturing apparatus (claimed) for manufacturing high pressure gas tank used as hydrogen gas accommodation tank used in fuel cell vehicle.    ADVANTAGE - The extension unit can hold the releasing bar and slack suppression bar in a stable state. Since the twist of fiber and damage of fiber drawn out from the bobbin can be suppressed, the quality of the manufactured tank can be improved. The space-saving property of the fiber holding apparatus can be improved and the productivity in manufacture of tank can be improved. The releasing bar is operated only if the extension unit is rotated to a predetermined position, so that the energy required for the drive of releasing bar can be reduced.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) high pressure gas tank manufacturing apparatus; and    (2) method for manufacturing tank.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the bobbin apparatus.    Main unit (71)    Circular plate (72)    Extension unit (74)    Releasing bar (80)    Slack suppression bar (90)    Bobbin apparatus (100A)    Feeding-out direction of fiber bundle (DF)    Carbon fiber bundle (f1)
NOVELTY - A doped conductive crystalline region is formed on surface of crystalline semiconductor layer by forming dopant-containing amorphous silicon layer stack on at least a portion of surface of crystalline semiconductor layer and irradiating selected area of dopant-containing amorphous silicon layer stack in which selected area of dopant-containing amorphous silicon layer stack interacts with upper portion of the underlying crystalline semiconductor layer (106) to form a doped conductive crystalline region.    USE - Formation of doped conductive crystalline region on surface of crystalline semiconductor layer for solar cells.    ADVANTAGE - Fabrication of solar cell structure and resulting solar cell structures are improved.    DETAILED DESCRIPTION - A doped conductive crystalline region is formed on surface of crystalline semiconductor layer by forming dopant-containing amorphous silicon layer stack on at least a portion of surface of crystalline semiconductor layer and irradiating selected area of dopant-containing amorphous silicon layer stack in which selected area of dopant-containing amorphous silicon layer stack interacts with upper portion of the underlying crystalline semiconductor layer (106) to form a doped conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on at least a portion of the surface of the crystalline semiconductor layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the process for using dopant-containing amorphous silicon layer stack to form localized doped crystalline regions.    Amorphous i-aSiH layer (102)    B-doped p-aSiH layer (104)    Underlying crystalline semiconductor layer (106)    Patterned radiation (108)    Melted/diffused irradiated region (110)
NOVELTY - The unit has a transparent wiring part (11) formed on an insulated substrate (10) i.e. glass substrate. The wiring part is formed of inorganic material i.e. indium tin oxide. A non-wiring part (12) is formed of resin material. A pattern of the resin material is formed in a non-wiring part such that UV irradiation is performed and resist is hardened after forming the resist based on acrylic resin as the non-wiring part. An indium tin oxide film is formed into a film, which is in contact with the substrate. The inorganic material and the resin material are mixed by an outermost surface.    USE - Transparent wiring part for a thin film transistor of a front-drive type display device e.g. LCD, electroluminescent display and plasma display, a touchscreen and a solar cell.    ADVANTAGE - The part has high transparency and electroconductivity and reduced manufacturing cost.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a formation method for a transparent wiring part.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film transistor.    Insulated substrate (10)    Transparent wiring part (11)    Non-wiring part (12)
NOVELTY - Carbon monoxide and/or hydrogen are manufactured by injecting electron into molecular catalyst and producing carbon monoxide and/or hydrogen in aqueous medium containing hydrophobic compound which is insoluble in water by pressure due to carbon dioxide. By controlling pH of water and/or reaction temperature and/or pressure of carbon dioxide, production amount of carbon monoxide and hydrogen can be changed. Pressure of carbon dioxide is greater than or equal to 0.5 MPa. The pH is 4-11.    USE - Manufacture of carbon monoxide and/or hydrogen for producing ammonia, methanol, synthetic fuels, reducing agent, and fuel cell, welding metals, and modifying fats and oils.    ADVANTAGE - Amount of carbon dioxide can be reduced, and production amount of carbon monoxide and hydrogen can be changed according to reaction conditions.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for molecular catalyst which is a complex containing metal coordinated to carbon of carbon dioxide.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph of current density and current efficiency during manufacture of carbon monoxide and/or hydrogen. (Drawing includes non-English language text).
NOVELTY - An antistatic thermoplastic resin composition is formed by blending 5-15 pts. wt. carbon nanotubes with respect to 100 pts. wt. resin component containing 35-60 wt.% styrene resin and 40-65 wt.% polyamide elastomer.    USE - Antistatic thermoplastic resin composition used for forming molded article (claimed) e.g. integrated circuit trays and conveying cases. Uses include but are not limited to car navigation system, car audio system, fuel cell peripheral device mounted in electric vehicles, slot machine, pachinko and electronic game devices, carrier reel, tape automated bonding tape, tape reel, chip on film tape reel, liquid crystal display conveyance tray and plasma display conveyance tray.    ADVANTAGE - The antistatic thermoplastic resin composition produces molded articles having excellent moldability, surface external appearance and low surface specific resistance.
NOVELTY - A laminate has sequential lamination of glass (1), curable resin layer (2), transparent resin layer, curable resin layer and glass. The curable resin layer contains a phenolic hydroxyl group-containing polyamide resin (A) and an epoxy resin (B).    USE - Laminate for window material used for cover glass for display device (claimed) e.g. organic electroluminescent display and liquid crystal display, touch screen, solar cell, lithium ion battery, electronic paper, signage, illumination device, construction component, motor vehicle components and electric train.    ADVANTAGE - The laminate has excellent lightness and impact resistance, and is environmentally-friendly.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of laminate.    Glass (1)    Sheet-like curable resin composition (2)    Polycarbonate (3)
NOVELTY - The sheet molding machine has an extruder for performing extrusion of melted thermoplastic resin. A die is used for molding the extruded resin in the form of a sheet. A touch roller presses the sheet on a cooling roller. The touch roller has a surface formed from metal or ceramics material. The cooling roller has a rubber layer (6) provided on a roller core (5). The rubber layer contains inorganic filler. A fluorine resin layer (8) is formed on the rubber layer.    USE - Sheet molding machine for manufacture of resin sheet for sealing solar cell of photovoltaic power generation unit.    ADVANTAGE - The adhesion of sheet to the cooling roller is prevented by using the fluorine resin layer. The cooling roller having sufficient cooling function is obtained by mixing inorganic filler with the rubber layer. The adhesion of sheet to the touch roller is prevented by forming the touch roller surface from metal or ceramics material. The sheet having a favorable external appearance is produced with sufficient productivity by performing extrusion of the sheet continuously at high speed.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the cooling roller.    Roller core (5)    Rubber layer (6)    Adhesive agent (7)    Fluorine resin layer (8)
NOVELTY - The method involves stacking solar cells each including P-N junction semiconductor layers (61,71,72,80) formed on a substrate (60), such that each solar cell absorbs light of different wavelengths. The spaced connection bumps (20',20'') and tunnel junction layers are formed between solar cells. The contacts are connected to the solar cells so as to output electric charge generated by the solar cells.    USE - Method for fabricating hybrid stacked chip used for manufacturing solar cell.    ADVANTAGE - The lens can be arranged on the solar cell to concentrate the beams of light, so that the area of the solar cell under the lens can be effectively reduced, and the manufacturing cost of the solar cell can be easily reduced. The semiconductor layers of different materials are provided by stacking tunnel layer and bumps, so as to prevent the problem of lattices mismatch between the layers, and to increase the efficiency of the solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the process for fabricating hybrid stacked chip used for manufacturing solar cell.    Connection bumps (20',20'')    Substrate (60)    P-N junction semiconductor layers (61,71,72,80)    Material layers (611,612,711,712,721,722,801,802)    Contacts (D-G)
NOVELTY - A benzaldehyde derivative (I) is new.    USE - New benzaldehyde derivative is used for gelatinizer for manufacturing electrolyte gel (all claimed). Uses include but are not limited to electrolyte of fuel cell, secondary battery, dye-sensitized solar cell, artificial actuator, electrochemical sensor, light emission display apparatus, shock absorber, packing material, optical material and building material etc.    ADVANTAGE - The benzaldehyde derivative provides stable electrolyte gel having excellent heat resistance, extensibility, strength, elasticity, softness, stretching property and flame retardance.    DETAILED DESCRIPTION - A benzaldehyde derivative of formula (I) is new.    R1-R3=1-9C linear or branched alkyl, where methylene (-CH2-) contained in linear or branched alkyl optionally replaced by sulfide bonding (-S-);and    R4-R6=1-4C linear or branched alkyl.    INDEPENDENT CLAIMS are included for the following:    (1) gelatinizer, which contains the benzaldehyde derivative (I);    (2) manufacture of electrolyte gel, which involves mixing the gelatinizer and ionic liquid; and    (3) electrolyte gel, which contains the gelatinizer and ionic liquid, and formed by gelatinizing the ionic liquid by the gelatinizer.
NOVELTY - Hydrogen filling system comprises desulfurizer (1), compressor (2), reformer (3), hydrogen conversion reactor (4), pressure swing adsorption device (5), carbon monoxide analyzer, high-pressure compressor, hydrogen container, and dispenser and temporary storage tank arranged between the pressure swing adsorption device and carbon monoxide analyzer at the rear end of pressure swing adsorption device, which temporarily stores hydrogen during system shutdown that is to be fed into the reformer when system restarts.    USE - Used as hydrogen filling system.    ADVANTAGE - The system supplies hydrogen to hydrogen storage safely and efficiently. The pre-operation of reformer can be activated by catalyst to reduce start-up time and improve hydrogen productivity and efficiency of the system.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for controlling the hydrogen filling system, comprising desulfurizing natural gas, compressing the desulfurized natural gas, reforming compressed natural gas, generating hydrogen, separating the hydrogen and other gases, temporarily storing hydrogen, analyzing the carbon monoxide concentration in hydrogen gas, compressing hydrogen to high pressure, storing hydrogen and filling hydrogen fuel cell vehicle and temporarily storing hydrogen and analyzing the carbon monoxide concentration between system shutdown and reactivation.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of hydrogen filling system.    Desulfurizer (1)    Compressor (2)    Reformer (3)    Hydrogen conversion reactor (4)    Pressure swing adsorption device (5)
NOVELTY - A hydrogen generation catalyst comprises a mayenite type compound having conduction electrons or hydrogen anions of 1015 cm-3 or more as support, and metal particles for decomposing ammonia supported on the surface of the support.    USE - Hydrogen generation catalyst is used for forming hydrogen (claimed) for fuel cell of motor vehicles.    ADVANTAGE - The hydrogen generation catalyst having excellent performance characteristics is manufactured economically by simple method with high conversion rate.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of catalyst, which involves heating the material in reduced environment, reducing compound of catalyst active metal, supporting the metal particles by sputtering, impregnating active metal, carrying out physical mixing, and carrying out thermal decomposition of mixture, liquid phase processing, or vapor deposition process; and    (2) manufacture of hydrogen, which involves supplying 0.1-100 vol.% ammonia gas to catalyst layer containing catalyst, and carrying out catalyzed degradation by weight space velocity of 500/mlg-1h-1 or more under reaction pressure of 0.01-1 Mpa and at 300-800 degrees C.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of reaction line for ammonia decomposition.    Reactor (1)    Cylinder (2, 3, 4)    Ball flowmeter (5)    Exhaust port (6)    Calibration pipe (7)
NOVELTY - Formation of pattern involves forming phase-separation film (105) on substrate (101) using composition containing polymers, and removing one portion phase of phase-separation film. The polymers comprise fluorine atom-containing polymer.    USE - Formation of pattern used for semiconductor element (all claimed) for semiconductor device, liquid crystal device and solar cell.    ADVANTAGE - The method provides micropattern having excellent lithographic characteristics, and suppressed line width roughness and critical dimensional uniformity. The circuit containing semiconductor element having pattern has excellent integration degree and recording density.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of pattern after forming phase-separation film in the region on the lower layer film divided with the pre pattern.    Substrate (101)    Lower layer film (102)    Pre-pattern (103)    Phase-separation film (105)    Polymer phases (105a,105b)
NOVELTY - Substituted 1,6-dihydro-dicyclopenta(b,g)naphthalene compounds (I), are new.    USE - (I) are useful for manufacturing organic semiconductor device (claimed) e.g. solar cell.    ADVANTAGE - (I) provide the organic semiconductor device with high light stability and solubility, and excellent charge mobility.    DETAILED DESCRIPTION - Substituted 1,6-dihydro-dicyclopenta(b,g)naphthalene compounds of formula (I), are new.    Z = S (preferred) or Se;    R1, R2 = 1-20C-alkyl, 1-20C-alkoxy, 1-20C-alkylthio or 6-20C-alkyl;    A1-A3, B1-B3 = 6-20C-arylene or 3-20C-heteroarylene;    R7, R8 = trifluoromethyl, silyl (both optionally substituted with one or more substituents), H, 1-20C-alkyl, 3-20C-cycloalkyl, 6-20C-aryl, 3-20C-heteroaryl, 6-20C-alkyl, 2-20C-alkenyl, 2-20C-alkynyl, 1-20C-alkoxy, amino, hydroxyl, halo, CN, nitro;    n, o = 1-3; and    l, m, p, q = 0-3, preferably 1-3.    An INDEPENDENT CLAIM is included for the preparation of (I).
NOVELTY - A catalyst support comprises gold nanoparticles having an average particle diameter of 100 nm or less, supported by a support having reducing power.    USE - Catalyst support. Uses include but are not limited to purification of internal-room air by removing carbon monoxide, reduction of nitrogen oxide in environmental atmosphere, carbon monoxide selective oxidation in fuel cells, propylene oxide synthesis from propylene, and glucose oxidation to produce gluconic acid.    ADVANTAGE - The catalyst support has excellent catalytic activity and can be manufactured by a convenient method. The support used has excellent economical efficiency and large specific surface area.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of catalyst support, which involves contacting a support having reducing power with gold carboxylate in the presence of water.
NOVELTY - Single-wall carbon nanotube is uniformly dispersed in water containing surface active agent, to form carbon nanotube dispersion liquid. Carbon nanotube dispersion liquid is added with a diazonium salt under ultrasonic condition, and metallic carbon nanotube is removed.    USE - Selective removal of metallic carbon nanotube for printing ink used for thin film transistor device (claimed), logic circuit device, solar battery, liquid crystal display, biosensor and radio frequency identification tag.    ADVANTAGE - The selective removal of metallic carbon nanotube is easily, quickly and economically enabled.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of thin film transistor device, which involves forming printing ink using carbon nanotube dispersion liquid.
NOVELTY - Mono-crystalline silicon piece etching additive composition comprises polyethylene glycol, sodium benzoate, citric acid, hydrolyzed polymaleic anhydride, sodium acetate and balanced water.    USE - Mono-crystalline silicon piece etching additive composition used for making etching liquid for solar cell.    ADVANTAGE - The mono-crystalline silicon piece etching additive composition is cost-effective, eco-friendly, and highly reduces chemical oxygen demand of etching solution and obtains uniform, fine product, and ensures stable crystalline silicon solar cell.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a monocrystalline silicon wafer flocking additive comprises an alkali solution and the mono-crystalline silicon piece etching additive in ratio of 0.2-100 or 5:100; and alkali solution is aqueous solution of inorganic or organic alkali; and    (2) an etching method for preparation of monocrystalline silicon piece, which involves mixing and etching additives uniformly in water to obtain a wool-making additive, roughening the wool-making additive; mixing and etching additive uniformly into the alkali solution to obtain etching additive's alkali solution; and immersing monocrystalline silicon wafer into etching additive's alkali solution at 75-90 degrees C for 500-1500 seconds.
NOVELTY - Method for preparation of polyvinylidene fluoride-polyvinyl alcohol composite proton exchange membrane, involves: first dissolving polyvinyl alcohol in dimethyl sulfoxide and water to prepare mixed macromolecule solution, adding silicon tetrachloride and sodium tungstate, heating, stirring, then adding polyvinylidene fluoride, heating in vacuum oil bath and stirring to form solution, pouring solution on polytetrafluoroethylene glass plate and drying, to obtain polyvinylidene fluoride-polyvinyl alcohol composite proton exchange membrane doped with silicon tungstate and silicon dioxide.    USE - For preparation of doped polyvinylidene fluoride-polyvinyl alcohol composite proton exchange membrane (claimed) useful in direct methanol fuel cell (DMFC) that is used as portable mobile power supply for cellular communication, military and in emergency rescue.    ADVANTAGE - The proton exchange membrane not only has good proton conductivity and low methanol permeability, but also has low swelling degree, good alcohol resistance and is convenient for large scale production. The proton exchange membrane has low development cost, good stability and low methanol permeability, thus can replace Nafion (RTM: proton exchange membrane) in research hotspot. When proton exchange membrane is evaluated for proton conduction performance, it shows excellent proton conductive rate that is greater than Nafion membrane, and has low swelling rate than Nafion film. The method for forming proton exchange membrane uses in-situ synthesis method to produce silicotungstic acid and silicon dioxide in membrane, where silicotungstic acid and silicon dioxide are uniformly distributed in film, and provide desired electrical (such as proton) conductivity, and method is simple, easy for industrialization and promotes development of direct methanol fuel cell.
NOVELTY - A transparent conductor, comprises: a transparent conductive film including a metal nanowire and a conductive polymer. The transparent conductor has a basterisk value of less than 1.78 in color coordinates of CIE Lab at wavelengths of 400-700 nm.    USE - As a transparent conductor which is used in an optical display apparatus (claimed) including touchscreen panels, flexible displays, E-paper, and solar cells.    ADVANTAGE - The transparent conductor has a haze value of 1.0-2.0% at wavelengths of 400-700 nm; is capable of reducing and/or preventing uneven surface resistance caused by metal nanowires, preventing pattern visibility, and preventing yellowish showing of the conductive film due to an inherent color of the metal nanowires; and exhibits low surface resistance and high transmittance. The conductive polymer helps to compensate for deviation of non-uniform surface resistance of the metal nanowires used alone in a conductive film, and helps to provide the color coordinate basterisk value of less than 1.78, and reduce milkiness.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a composition (c1) for a transparent conductive film comprising: a metal nanowire, a conductive polymer, and a heat curing agent; and    (2) an optical display apparatus comprising the transparent conductor.
NOVELTY - A metal substrate used for electronic device using semiconductor has a base material layer (1) and a reaction suppression layer (2) joined to one surface of the base material layer. The base material layer is formed using an iron-based material. The reaction suppression layer is formed using aluminum-silicon alloy containing 0.2-8.5 %mass silicon.    USE - Metal substrate is used for electronic device e.g. solar cell (all claimed), thin-film transistor, organic electroluminescent device and light-emitting diode.    ADVANTAGE - The metal substrate having excellent heat resistance is economically manufactured by simple method. The peeling of base material layer and reaction suppression layer is suppressed even when metal substrate is heat-processed at more than 500 degrees C.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the metal substrate.    Base material layer (1)    Reaction suppression layer (2)
NOVELTY - Preparing nanoparticle involves providing nanoparticle that comprises structurally disordered material composition, and thermally treating the nanoparticle that comprises the structurally disordered material composition to provide nanoparticle that comprises a structurally ordered material composition.    USE - For preparing a nanoparticle (claimed) used in membrane and fuel cell.    ADVANTAGE - The core-shell structured platinum-cobalt (Pt-Co) nanoparticles, composed of Pt3Co ordered intermetallic cores with 2-3 atomic-layer Pt shells, can be prepared by a simple method to yield carbon supported core-shell structured Pt-Co nanoparticles. The Pt shell is strained to the ordered intermetallic core, which has a 0.8% smaller lattice constant than a disordered alloy. These nanoparticles exhibit generally high Pt mass activities for oxygen reduction reaction (ORR) in comparison with related Pt-Co systems reported in the literature under similar testing conditions and with enhanced durability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) membrane comprising a nanoparticle having a core comprising a first material arranged in a structurally ordered array, and a shell surrounding the core and comprising a second material different from first material and further structurally ordered with respect to the structurally ordered array; and    (2) fuel cell comprising membrane containing a nanoparticle having core containing first material arranged in a structurally ordered array, and a shell surrounding the core and comprising a second material different from the first material and further structurally arranged with respect to the structurally ordered array.
NOVELTY - Spherical silicon is manufactured by spreading powder-form or strip-form raw material silicon (12) on support base (5), heating and melting raw material silicon, irradiating microwave to region where raw material silicon is spread, cooling silicon in molten state, and obtaining spherical silicon.    USE - Manufacture of spherical silicon for solar cell.    ADVANTAGE - Binding of spherical silicon atoms can be suppressed, single spherical silicon can be manufactured, and manufacturing cost can be reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional diagram of a microwave heating device used for manufacturing spherical silicon.    Microwave heating device (1)    Microwave oscillation part (2)    Microwave exposure part (3)    Support base (5)    Raw material silicon (12)
NOVELTY - A zinc oxide-type transparent-conductive-film forming material comprises oxide sinter containing zinc oxide as main component and titanium and carbon. The titanium source is titanium carbide and the ratio of number of titanium atom is 0.2-5% with respect to total number of metal atoms.    USE - Zinc oxide-type transparent-conductive-film forming material is used for forming target used for film forming by sputtering method, ion-plating method, pulse laser deposition method and electron-beam vapor deposition method and for transparent conductive substrate (all claimed). Uses include but are not limited to solar cell, liquid crystal display and light receiving element.    ADVANTAGE - The zinc oxide-type transparent-conductive-film forming material provides target having excellent reproducibility, electroconductivity, near-infrared area permeability, chemical durability, heat-resistance property, moisture-resistance property and weather resistance property, and is manufactured economically.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) target;    (2) formation of zinc oxide-type transparent-conductive film; and    (3) transparent conductive substrate.
NOVELTY - The functional film (10,30) has inorganic layer (14) which is formed into film on surface with organic compound of substrate (12,24) which is made of silicon nitride. The residual compression stress of inorganic layer is 200-4000Mpa. The peak of silicon-nitrogen bonding in the Fourier-transform infrared absorption spectrum of inorganic layer is located in 800-900cm-1. The peak of the silicon-hydrogen bond is located in 2100-2200cm-1. The peak of nitrogen-hydrogen bonding is located in 3300-3400cm-1 by satisfying predetermined equation.    USE - Functional film e.g. gas barrier film used for thin film solar cell, and organic electroluminescent display. Can also be used in protective film, antireflection film of display apparatus such as optical element, LCD, and semiconductor device.    ADVANTAGE - The high gas-barrier property of the functional film can be ensured. The damage occurred to the inorganic layer can be prevented. The performance of the functional film can be improved. The flexibility of the film can be improved. The peeling of the deposited film forming material can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional views of the gas barrier film.    Functional film (10,30)    Substrate (12,24)    Inorganic layer (14)    Support portion (26)    Organic layer (28)
NOVELTY - A solar cell has front-side metal grid (300) set above the photovoltaic structure. The front-side metal grid includes one or more electroplated metal layers and one or more finger strips (302,304), and each end of the respective finger strip (302) is coupled to the corresponding end of the adjacent finger strip (304) via additional short lines (306,308), and ensure that the respective finger strip has no open end.    USE - Solar cell for converting light into electricity using photovoltaic effect.    ADVANTAGE - Finger strip with no open end is ensured by coupling the end of respective finger strip to the corresponding end of the adjacent finger strip via additional short lines.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a fabricating method for solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the electroplated metal grid situated on the surface of the solar cell.    Front-side metal grid (300)    Finger strips (302,304)    Short lines (306,308)    Busbars (310,312)
NOVELTY - Method of refining hydrogen selenide containing gas involves passing hydrogen selenide-containing gas to AW-500 molecular sieve, and reducing the quantity of hydrogen sulfide in hydrogen selenide-containing gas to less than 10 ppmv.    USE - Method of refining hydrogen selenide containing gas (claimed) used in solar cell.    ADVANTAGE - The method efficiently provides refined hydrogen selenide containing gas.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for purification of hydrogen selenide, which involves allowing hydrogen selenide to pass through to 4-A molecular sieve, and allowing hydrogen selenide to pass through to AW-500 molecular sieve.
NOVELTY - A semiconductor wafer comprises a substrate, a primary aluminum gallium nitride layer on the substrate, a secondary aluminum gallium nitride layer on the primary aluminum gallium nitride layer, a gallium nitride layer on the secondary aluminum gallium nitride layer, and crystalline gallium nitride islands between the aluminum gallium nitride layers.    USE - Semiconductor wafer is used for light-emitting diode and solar cell (all claimed).    ADVANTAGE - The semiconductor wafer has reduced occurrence of threading dislocations and curvature, and is quickly and economically manufactured by simple process. The light-emitting diode containing semiconductor wafer has excellent internal quantum efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of semiconductor wafer.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of semiconductor wafer.
NOVELTY - Formation of surface coating film involves applying a surface coating film-forming composition onto a base material where the composition comprises organic solvent component and a surface coating film-forming component including 2 or more elements chosen from silicon, titanium and zirconium, and heating coating film.    USE - Formation of surface coating film is used for solar cell (claimed) e.g. silicon-crystal solar cell.    ADVANTAGE - The method enables manufacture of formation of surface coating film having excellent characteristics, and is formed economically by simple process.
NOVELTY - The energy management system (1) has a fuel cell (10) which supplies electric power to a load (60). A secondary battery (20) stores surplus electric power of the fuel cell and supplies the accumulated electric power to the load. A heat recovery equipment is positioned so that the heat generated in the fuel cell about the refrigerant pipe into which refrigerant flows and the heat generated in the secondary battery may be collected.    USE - Energy management system for secondary batteries e.g. lithium ion battery.    ADVANTAGE - Enables effective recycling of coolant used in cooling a secondary battery which contributes to economical efficiency in a cogeneration system.    DESCRIPTION OF DRAWING(S) - The drawing shows a structural view of an electric power grid in the energy management system.    Energy management system (1)    Fuel cell (10)    Secondary battery (20)    Load (60)    Hot water storage unit (70)
NOVELTY - The apparatus (1) has a chamber (20) that is provided to store the substrate holder (10) which is provided to mount the substrate. A cooling mechanism (30) is provided to cool the wall portion surrounding the substrate holder of the chamber. A heat insulating material (40) is enclosed to the surroundings of the substrate holder and is arranged in the chamber. The heat insulating material is spaced apart and is arranged from the wall portion of the chamber.    USE - In-line type semiconductor manufacturing apparatus for manufacturing semiconductor device such as solar cell.    ADVANTAGE - The process dispersion within the chamber by which the wall portion is cooled can be suppressed. The damage to the chamber is prevented. The uniformity of the temperature distribution in the chamber can be made high. The distribution of film quality and the distribution of the film forming rate can be improved. The dust generation from the cladding material is suppressed by knitting the fiber. The lifetime of substrate can be improved. The conversion efficiency of solar cell can be improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor manufacturing apparatus. (Drawing includes non-English language text)    Semiconductor manufacturing apparatus (1)    Substrate holder (10)    Chamber (20)    Cooling mechanism (30)    Heat insulating material (40)
NOVELTY - The method involves forming a lower insulating layer (160) on a front surface and a back surface of a substrate (110) e.g. silicon wafer. An upper insulating layer (130) is formed on the lower insulating layer and an opening is formed, which is passed through the upper insulating layer and the lower insulating layer, where a maximum width of the opening at the lower insulating layer is greater than a maximum width of the opening at the upper insulating layer. The lower insulating layer is made of aluminum oxide or silicon oxide, and the upper insulating layer is made of silicon oxide.    USE - Method for manufacturing a semiconductor device e.g. solar cell.    ADVANTAGE - The method enables increasing a contact area between the electrode and the emitter layer or the back surface field layer as the size of the electrode exposed to the outside of the anti-reflection layer can decrease while suppressing a reduction in a light incident area resulting from the electrode. The method enables removing a damaged portion generated by the laser, where separate wet etching process for removing the particles is not required, so that the damage of the substrate can be prevented even if the laser is used.    DETAILED DESCRIPTION - The upper insulating layer on the front surface of the substrate and the lower insulating layer on the back surface of the substrate are made of silicon nitride.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a semiconductor device.    Substrate (110)    Emitter layer (120)    Upper insulating layer (130)    Electrodes (140, 170)    Lower insulating layer (160)
NOVELTY - A black curable resin composition contains carboxyl group-containing photosensitive resin (A), photoinitiator (B), diluent (C), epoxy compound (D), urethane (meth)acrylate (E), and perylene-type black coloring agent (F).    USE - Black curable resin composition is used for hardened material used as solder resist film for printed wiring board (all claimed). Uses include but are not limited to solar cell backsheet, backsheet surface of light emitting diode, backlight for street lights, cover-lay, and coating material for light absorption agents.    ADVANTAGE - The hardened material formed using the black curable resin composition has excellent flexibility and high transmittance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) hardened material, which is obtained by hardening black curable resin composition; and    (2) flexible printed wiring board.
NOVELTY - A glass material (1) has infrared light reflective coating (12) comprising network of nanomaterials, attached to the glass material surface.    USE - Glass material is used for heat receiver tube and parabolic trough collector (all claimed) used in solar power plant for converting solar energy into electrical energy.    ADVANTAGE - The glass material is economical and has excellent transparency, adhesiveness with respect to optical film, high conductivity, infrared light reflectivity and mechanical flexibility, and low sheet resistance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) heat receiver tube;    (2) parabolic trough collector; and    (3) manufacture of glass material.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of glass tube.    Glass material (1)    Glass tube wall (10)    Inner surface (11)    Infrared light reflective coating (12)    Intermediate layer (14)
NOVELTY - A tempered glass has a compressive-stress layer comprising glass composition including 50-80 mol% silicon dioxide, 4-16 mol% aluminum trioxide, 0-5 mol% boron trioxide, 0.1-20 mol% sodium oxide, and 0-15 mol% potassium dioxide, where total content of magnesium oxide, calcium oxide, strontium oxide, and barium oxide is 0.5-13 mol% and molar ratio total content of magnesium oxide, calcium oxide, strontium oxide, and barium oxide and total content of lithium dioxide, sodium dioxide, and potassium oxide is 0.05-2.    USE - Tempered glass is used for substrate of solar cell e.g. thin film compound solar cell (all claimed) and copper indium gallium selenide-type solar cell, and cover glass. Uses include but are not limited to mobile telephone, digital camera, personal digital assistant, touchscreen display, flat panel display, window glass, magnetic disc substrate, cover glass for solid-state image sensor and tableware.    ADVANTAGE - The tempered glass has excellent mechanical strength and melting property.
NOVELTY - A tetragonal single crystal silicon wafer comprises sliced single crystal silicon having tetragonal cross-section in which single crystal silicon is grown by float zone (FZ) method. Tetragonal single crystal silicon has four-fold symmetry in in-plane resistivity. In-plane distribution of resistivity is less than or equal to 22%.    USE - A tetragonal single crystal silicon wafer for solar cell panel (claimed).    ADVANTAGE - In-plane distribution of resistivity of tetragonal single crystal silicon can be improved, high-speed growth of tetragonal single crystal silicon can be achieved, formation of defects during growth of single crystal silicon can be suppressed, and efficiency of solar cell can be improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph of in-plane distribution of resistivity of single crystal silicon with tetragonal cross-section. (Drawing includes non-English language text).
NOVELTY - Manufacture of transparent conductive glass coated with fluorinated-tin oxide film involves preparing tin(II)chloride dihydrate precursor and ammonium fluoride, providing prepared product and 0.5 N hydrochloric acid solution into a reactor, ultrasonically nebulizing the resultant product, and spraying into a substrate, providing the substrate into an oven, heating the substrate, stabilizing, drying the resultant product, coating fluorinated-tin oxide on the substrate, heating for 30 minutes and then cooling.    USE - Manufacture of transparent conductive glass coated with fluorinated-tin oxide film (claimed) used for computer monitor, television, light-emitting device and solar cell.    ADVANTAGE - The method provides transparent conductive glass coated with fluorinated-tin oxide film having favorable sheet resistance and visible light transmittance.
NOVELTY - The component (100) has a heat distribution layer i.e. composite film, standing in physical contact and/or thermal contact with a carrier (102) or a capping layer structure (128). The heat distribution layer distributes heat of an electrically active region (106). The heat distribution layer is designed in such a way that a neutral axis of the component is established in the electrically active region during bending of the component at edge of the electrically active region, in the capping layer structure or at edge of the capping layer structure.    USE - Optoelectronic component i.e. organic LED (claimed), for use in an organic solar cell.    ADVANTAGE - The heat distribution layer is designed in such a way that the neutral axis of the component is established in the electrically active region during bending of the component at the edge of the electrically active region, in the capping layer structure or at the edge part of the capping layer structure, thus providing a simple and mechanically flexible design of the component with increased functionality, overall efficiency and high mechanical stability. The heat distribution layer is designed in a simple, robust and cost-effective manner with reliability. The component is designed such that the component is protected from the risk of mechanical stress and damage.    DETAILED DESCRIPTION - The heat distribution layer comprises a material selected from a group consisting of aluminum, steel, copper, soot, graphite, grapheme, carbon nanotube. An INDEPENDENT CLAIM is also included for a method for manufacturing an optoelectronic element.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of an optoelectronic element.    Organic LED (100)    Carrier (102)    Electrically active region (106)    Capping layer structure (128)    Mechanical sensitive region (130)
NOVELTY - The method involves patterning the photoresist in the side of the conductivity type semiconductor substrate (S1). The semiconductor substrate is dipped (S2) in the mixture of the fluoric acid solution and hydroperoxide solution. A protective film is formed on the side of the semiconductor substrate (S4), while adhering silver particle from the silver nitrate solution doping (S5) the conductive impurity in the microwire. A PN junction structure is formed (S6) in the side of the semiconductor substrate to form the back surface field (GSF) layer.    USE - Method for fabricating solar cell (claimed).    ADVANTAGE - The lithography design of the photoresist can be facilitated. The concentration of the wet etchant and soaking time of the semiconductor substrate can be realized. The aspect ratio of the nanowire can be improved. The manufacturing cost of the solar cell can be reduced. The reflectivity of the light incoming with the multiple microwires and nanowire can be reduced. High efficiency of solar cell can be obtained. The route of the incoming light can be increased with quantum effect.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart illustrating the process for fabricating solar cell.(Drawing includes non-English language text)    Step for patterning photoresist in side of conductivity type semiconductor substrate (S1)    Step for dipping semiconductor substrate in mixture of fluoric acid solution and hydroperoxide solution (S2)    Step for forming protective film on side of semiconductor substrate (S4)    Step for doping conductive impurity in microwire (S5)    Step for forming PN junction structure in side of semiconductor substrate (S6)
NOVELTY - A copper-indium selenide thin film solar cell absorption layer preparation method involves using a substrate comprising hydrochloric acid, acetone and absolute ethyl alcohol and ultrasonic cleaning the substrate. The substrate is washed. Copper sulfate, indium sulfate, sodium thiosulfate and sodium citrate are utilized as an electrolyte. The substrate equipped with bipolar electrolytic cell is cleaned and performing electro-deposition process on the cleaned substrate, washed by distilled water and dried to obtain the finished product.    USE - Method for preparing a copper-indium selenide thin film solar cell absorption layer.    ADVANTAGE - The method enables preparing the copper-indium selenide thin film solar cell absorption layer in an economical manner.    DETAILED DESCRIPTION - A copper-indium selenide thin film solar cell absorption layer preparation method involves using a substrate comprising 50 mass% hydrochloric acid, acetone and absolute ethyl alcohol and ultrasonic cleaning the substrate for 20-40 minutes. The substrate is washed using distilled water. 8-12 mmole.l-1 copper sulfate, 7-8 mmole.l-1 indium sulfate (In2(SO4)3), 55-65 mmole.l-1 sodium thiosulfate and 8-9 mmole.l-1 sodium citrate are utilized as an electrolyte, and pH of solution is adjusted to 4. The substrate equipped with bipolar electrolytic cell is cleaned and performing electro-deposition process on the cleaned substrate for 30-60 minutes, washed by distilled water and dried at 300-400 degrees C for 30-60 minutes to obtain the finished product.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for preparing a copper-indium selenide thin film solar cell absorption layer. '(Drawing includes non-English language text)'
NOVELTY - A glass-ceramic seal material consists of 60-100 wt.% glass powder and 0-40 wt.% ceramic powder material.    USE - Glass-ceramic seal material for low-temperature solid oxide fuel cell (claimed).    ADVANTAGE - The glass-ceramic seal material is easily and economically manufactured with high stability and favorable thermal expansion coefficient.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of glass-ceramic seal material.
NOVELTY - Hydroxyl phenyl beryline imide derivatives (I) are new.    USE - In organic light emitting diode, field effect transistor and solar cell (claimed).    ADVANTAGE - The compound (I) can be synthesis using simple method that provides high yield of the compound (I).    DETAILED DESCRIPTION - Hydroxyl phenyl beryline imide derivatives of formula (I) are new.    R=1-18C straight-chain or branched primary alkyl    An INDEPENDENT CLAIM is included for a method of synthesis of substituted beryline imide derivative (I).
NOVELTY - Preparation of nanoparticles system involves selecting anti-reflection microstructure, impregnating the resultant product in noble metal precursor solution, adding reducing agent to obtain noble metal nanoparticles deposited anti-reflection microstructure, impregnating the deposited noble metal nanoparticles in chalcogenide semiconductor compound precursor solution, and heating the resultant product in which chalcogenide semiconductor compound in formed on the surface of nanoparticles.    USE - Preparation of nanoparticles system used for solar heat collector and energy absorber (all claimed).    ADVANTAGE - The method provides nanoparticles system having excellent anti-reflective characteristics, and photo-thermal conversion efficiency of 30.56%.
NOVELTY - The flatness auto compensation device comprises a processing unit (60), which converts the measurement height into an elevation displacement about the predetermined reference height of a substrate. A measuring unit (10) is mounted about the virtual xy plane of a lifting operation portion (50). A control unit (40) controls the vertical or horizontal movement speed of the processing unit according to the elevation displacement of the substrate. A control unit controls the processing movement of the processing unit. The measuring unit is equipped within a measurement sphere eastern (20).    USE - Flatness auto compensation device for compensating the surface flatness of the substrate, such as the silicon wafer within a semiconductor device or a solar cell or a light emitting diode or a liquid crystal polymer device or a plane display panel.    ADVANTAGE - The control unit controls the vertical or horizontal movement speed of the processing unit according to the elevation displacement of the substrate, and thus efficiently maintains the planarity of the substrate within the semiconductor device, and hence reduces the manufacturing cost of the semiconductor device.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for compensating the surface flatness of the substrate, such as the silicon wafer within a semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a flatness auto compensation device.    Measuring unit (10)    Measurement sphere eastern (20)    Control unit (40)    Lifting operation portion (50)    Processing unit (60)
NOVELTY - A transparent conductive base material (15) is a laminated component comprising a transparent base material (11), a conductive layer (12) and a transparent resin layer (13) containing an electroconductive substance, in order.    USE - Transparent conductive base material is used for touchscreen (claimed). Uses include but are not limited to organic electroluminescent, solar cell, plasma display and liquid crystal display.    ADVANTAGE - The transparent conductive base material has excellent durability and low contact resistance. The touchscreen containing transparent conductive base material has excellent operativity.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the transparent conductive base material.    Transparent base material (11)    Conductive layer (12)    Transparent resin layer (13)    Resin layer (14)    Transparent conductive base material (15)
NOVELTY - The invention discloses a method of preparing a buffer layer of a copper-indium-gallium-selenium solar cell, comprising the following steps: surface modification treatment for spraying surface modification liquor over a main absorption layer, which contains at least copper, indium, gallium, selenium, of the substrate to improve the surface of the main absorption layer and to form a moisture surface; atomization treatment for utilizing an atomization device to atomize the buffer layer into mist droplets falling to the surface modification liquor on the main absorption layer, thereby forming the buffer layer; rinsing treatment, utilizing deionized water to rinse the buffer layer that has been treated by atomization treatment; and blow-drying treatment, utilizing a fan for blowing and drying the liquid remained on the buffer layer. The formed buffer layer can be provided for subsequent processes for fabricating the copper-indium-gallium-selenium solar cell to form a transparent conductive layer. Therefore, the buffer layer of the invention can enhance the photoelectric conversion efficiency of the overall copper-indium-gallium-selenium solar cell.
NOVELTY - A metal salt (A) is added to a solvent, and converted to an insoluble compound comprising nanoparticle seeds. A portion of metal salt (B) and a reducing agent are added and reacted in the presence of obtained nanoparticle seeds and surfactant, to obtain metal nanoparticles (20). Each metal nanoparticle includes a metal shell (22) containing metal from metal salt (B) formed around a nucleus (26) obtained from a nanoparticle seed.    USE - Method for forming metal nanoparticles around nucleus used for metal nanoparticle composition (claimed). Uses include but are not limited to soldering application, printed circuit board, conformal coatings, thin-film solar cell, battery, drug delivery and drug therapy system, thermoelectric material, gas sensor and conductive ink.    ADVANTAGE - The method provides metal nanoparticles having narrow and desired size with high productivity.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for nanoparticles composition.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of metal nanoparticles.    Metal nanoparticles (20)    Metal shell (22)    Surfactant coating (24)    Nucleus (26)
NOVELTY - A negative electrode consists of a metal foil, a negative-electrode active-material layer formed on the surface(s) of metal foil and containing a titanium-containing oxide as active material, and a film containing an electroconductive material formed between the metal foil and active-material layer.    USE - Negative electrode is used for secondary batteries (claimed) e.g. lithium ion secondary batteries. Uses include but are not limited to electric vehicles, hybrid vehicles, rail vehicles, boats, ship, aircraft, mobile telephones, portable information terminals, solar energy power generation systems, wind generator systems, and fuel cell systems.    ADVANTAGE - The negative electrode provides secondary batteries which can be charged and discharged with a large current at a high rate, and have low internal resistance and impedance without requiring addition of a large amount of a material, such as a conductive additive which does not contribute to the electrical capacity into the active-material layer even in cases where a titanium-containing oxide is used as active material.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for secondary battery.
NOVELTY - A ferritic stainless steel contains 0.020 %mass or less carbon, less than 3 %mass silicon, less than 1 %mass manganese, 0.04 %mass or less phosphorus, 0.030 %mass or less sulfur, 10 %mass to less than 16 %mass chromium, 0.020 %mass or less nitrogen, 1.4-4 %mass aluminum, more than 0.15 %mass to 0.5 %mass titanium, 0.05-0.5 %mass nickel, and remainder of iron and unavoidable impurities. The mass ratio of content of aluminum with respect to chromium in ferritic stainless steel is 0.14 or more.    USE - Ferritic stainless steel is used for exhaust system component e.g. exhaust pipe of motor vehicles or motorcycles, catalyst outer cylinder material and exhaust duct of thermal power generation plant, and solid-oxide-type component for fuel cell.    ADVANTAGE - The ferritic stainless steel has excellent thermal-fatigue characteristics and oxidation resistance.
NOVELTY - An article comprises a substrate comprising a heat-sensitive material having deposited nanoparticles or nanocomposite film of crystalline metal oxide.    USE - Article e.g. gas sensor, electrochromic device, solar cell and photocatalyst (all claimed). Uses include but are not limited to air/water purification, self-cleaning, hydrophilic/hydrophobic switching, sterilization and hydrogen production through water-splitting.    ADVANTAGE - The ultrafast pulsed laser annealing process enables favorable crystallinity, stoichiometry, and morphology of titania.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) system;    (2) method for depositing nanoparticles or nanocomposite films of crystalline metal oxide onto a substrate; and    (3) ultrashort laser-based method.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of pulsed laser deposition system.
NOVELTY - The cover glass comprises a coating layer that is made of two optical wavelength band filters, where the transmittance of the former optical wavelength band filter is higher than transmittance of the latter optical wavelength band filter. The former optical wavelength band filter is formed on the glass. The rare-earth material is also used.    USE - Cover glass for solar cell.    ADVANTAGE - The cover glass comprises a coating layer that is made of two optical wavelength band filters, where the transmittance of the former optical wavelength band filter is higher than transmittance of the latter optical wavelength band filter, and thus enables improving efficiency of the polycrystalline silicon solar cell by fixing the range of the reflection or the transmitted light.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a cover glass for solar cell.
NOVELTY - Formulation comprises at least one doped conductive polymer, at least one oxidizing agent and at least one solvent.    USE - The formulation is useful in an organic electronic device that is an electroluminescent device (all claimed), polymer electro-luminescent device, an organic integrated circuit, an organic FET, an organic thin film transistor, an organic light-emitting transistor, an organic solar cell, an organic optical detector, an organic photoreceptor, an organic field-quench device, an organic light-emitting electrochemical cell or an organic laser diode.    ADVANTAGE - The formulation exhibits outstanding hole injection characteristics and high conductivity with wider spectral window of the optical transmissivity and good durability.
NOVELTY - Glass substrate processing involves cleaning a glass substrate in concentrated sulfuric acid and hydrogen peroxide solutions, and then in deionized water by ultrasonic cleaning process. The cleaned material is dried in oven to obtain hydroxylated product of the glass substrate. The obtained product is placed in a mixed solution of (3-aminopropyl) triethoxysilane and ethanol for certain time, and then glass substrate is taken out under nitrogen environment. The obtained material is dried in oven for certain time, and then cooled at room temperature to obtain aminated glass substrate.    USE - Method for processing glass substrate used for preparing glass encapsulated solar cells (all claimed).    ADVANTAGE - The method enables to produce glass encapsulated solar cells with improved hardness and friction performance of solar cells.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing glass encapsulated solar cells, which involves:    (A) coating of aminated glass substrate by spray coating, dip coating, pulling, roller coating, spin coating, flow coating or brush coating by using epoxy radical of modified silica sol;    (B) plating antireflection film on the coated glass substrate, and then strengthening antireflection film to obtain the finished product;    (C) preparing modified silica sol by dissolving ethyl orthosilicate and gamma-(2,3-epoxypropoxy)propyl trimethoxysilane in absolute ethyl alcohol;    (D) stirring the obtained mixture uniformly to obtain solution;    (E) adding ethanol and ammonia water solution into the obtained solution; and    (F) stirring continuously for a certain time at room temperature to obtain the modified silica sol.
NOVELTY - An organic solar cell material comprises phenyl carbazole as core, and benzothiadiazole compound (I) in side chain.    USE - Material is used for active layer of organic solar cell (all claimed).    ADVANTAGE - The material has excellent solubility, and is manufactured with high purity. The thin film formed using the solution has high quality.    DETAILED DESCRIPTION - An organic solar cell material comprises phenyl carbazole as core, and benzothiadiazole compound of formula (I) in side chain.    X=thiophene derivative chosen from group of formula (i)-(vii);    R1-R4=H, 1-12C alkyl or alkoxy;and    n=0-6.    INDEPENDENT CLAIMS are included for the following:    (1) preparation of organic solar cell material, which involves reacting carbazole with p-dibromobenzene, adding boric acid ester, performing Suzuki coupling reaction to obtain 9-(4-bromophenyl) carbazole, dissolving 9-(4-bromophenyl) carbazole in solvent (A), under ice-cooling condition, dropping N-bromosuccinimide solution to resulting mixture, reacting at room temperature for 3-8 hours, quenching, washing, extracting, drying, and purifying to give crude product, dissolving crude product in solvent (B), dropping butyl lithium, injecting pinacol boronic acid isopropyl ester to resulting mixture, reacting for 6-12 hours, quenching with ice-water, extracting, drying and filtering to obtain benzocarbazole boronate, esterifying resulting mixture with alkyl bromide, and boric acid, performing Suzuki coupling reaction, to obtain bromine-substituted thiophene compound, protecting bromine-substituted thiophene compound under inert atmosphere, adding palladium tetrakis(triphenylphosphine), dissolving into solvent, adding aqueous potassium carbonate solution, reacting at 85-110 degrees C for 48-72 hours, extracting, drying, performing column chromatography, adding organic solvent (C) and auxiliary agent, washing with water, extracting and drying; and    (2) application of material.
NOVELTY - A glass washing pad (100) contains nonwoven fabric (110) containing metal-containing fiber comprising metal on the surface of fiber.    USE - Glass washing pad. Uses include but are not limited to manufacture of video display apparatus e.g. flat panel display and glass substrate of solar cell.    ADVANTAGE - The glass washing pad enables efficient removal of attachments of glass.    DESCRIPTION OF DRAWING(S) - The drawing shows top view and side view of the glass washing pad.    Glass washing pad (100)    Nonwoven fabric (110)
NOVELTY - An aromatic compound (II) and boron-containing compound (III) are subjected to coupling reaction, to form picene compound (I). The obtained compound (I) is dehydrohalogenated, to obtain picrene derivative (IV).    USE - Manufacture of picene compound or its derivative used for organic semiconductor, field-effect transistor and solar cell (all claimed).    ADVANTAGE - The picene compound or its derivative is manufactured efficiently and economically with high yield.    DETAILED DESCRIPTION - An aromatic compound (II) and boron-containing compound (III) are subjected to coupling reaction, to form picene compound (I). The obtained compound (I) is dehydrohalogenated, to obtain picrene derivative (IV).    X1,X2=halo;    R7,R8=H, halo, nitro, optionally protected hydroxy, optionally protected amino, 1-20C alkoxy or -SiR13R14R15, optionally protected carboxy, or optionally substituted 1-20C hydrocarbyl;    R13-R15=H or optionally substituted 1-20C hydrocarbyl;    Ar'=aryl optionally substituted by halo, nitro, optionally protected hydroxy, optionally protected amino, 1-20C alkoxy or -SiR13R14R15, optionally protected carboxy, or optionally substituted 1-20C hydrocarbyl;    R5,R6=R13;    R11,R12=H or 1-20C alkoxy;and    or R11+R12=ring.    An INDEPENDENT CLAIM is included for picene compound (I).
NOVELTY - A hydrogel forming composition comprises a water-soluble organic polymer (A) having an organic acid salt structure or an organic acid anion structure, a silicate (B) and a dispersant (C) of silicate with weight average molecular weight of 200-20000 and hydrolysis resistance, and is capable of forming self-supporting hydrogel.    USE - Hydrogel forming composition for manufacturing hydrogel (all claimed). Uses include but are not limited to chromatographic support material, bioreactor support material, fireproof coating material, mudflow prevention material, shock absorption material, stationery material, adhesive material, sealing material, fuel cell material, photographic film material, etc.    ADVANTAGE - The composition easily and safely enables manufacture of hydrogel having excellent transparency and strength.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of hydrogel, which involves mixing water-soluble organic polymer (A), silicate (B) and dispersing agent (C), and gelatinizing.
NOVELTY - Preparation of double-layer plasma-enhanced chemical vapor deposition silicon nitride film comprises depositing first layer of silicon nitride film on quartz tube under nitrogen at 405-470 degrees C for 120-200 seconds and depositing second layer of silicon nitride film at 405-470 degrees C for 700-900 seconds.    USE - Method for preparing double-layer plasma enhanced-chemical vapor deposition silicon nitride film (claimed) used as solar battery.    ADVANTAGE - The method saves time, improves yield, and has low production cost.
NOVELTY - A rare earth upconversion nanoparticles (UCNPs) with core-shell-shell structure contains outside shell layer containing neodymium ion (Nd3+) and layers containing ytterbium ion (Yb3+).    USE - A rare earth upconversion nanoparticles with core-shell-shell structure for solar battery, sensor, biological analysis, and medical imaging (all claimed).    ADVANTAGE - Upconversion nanoparticles have greatly improved conversion efficiency and high power laser irradiation, avoid quenching effect, greatly improve excitation light source penetration depth, and effectively avoid interference of autofluorescence and scattered light in biological tissue.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of rare earth upconversion nanoparticles which involves preparing Yb3+-containing nanoparticle core layer, preparing Yb3+-containing nanoparticle core-shell, and preparing Yb3+-containing and shell layer containing Nd3+ core-shell-shell nanoparticles.    DESCRIPTION OF DRAWING(S) - The drawing shows an X-ray diffraction pattern of upconversion nanoparticles with core-shell-shell structure. (Drawing includes non-English language text).
NOVELTY - A hole layer tungsten carbide/carbon composite material is prepared by dissolving template agent in mixture of ethanol and water at 40 degrees C, adding carbon and tungsten source, stirring to obtain uniform transparent solution of precursor solution, adding wood powder, performing vacuum impregnation under reduced pressure for 30-90 minutes, volatilizing to remove solvent at 30-60 degrees C, drying, curing at 100-150 degrees C for 12-48 hours to obtain polymerized product, reducing carbon under reduced atmosphere, drying in high temperature furnace at 700-1400 degrees C for 1-7 hours, cooling, and grinding.    USE - Preparation of hole layer tungsten carbide/carbon composite material for electrochemical catalysis, sensors, organic synthesis, and direct-methanol fuel cell catalyst.    ADVANTAGE - Process is simple, fast, and low cost, and has additional value and high efficiency.
NOVELTY - An alcohol-resistant proton conducting composite film comprises polymer proton-conducting film consisting of graphene layer attached to 1 side of polymer proton-conducting film or between 2 layers of polymer in proton-conducting film.    USE - An alcohol-resistant proton conducting composite film (claimed).    ADVANTAGE - Alcohol resistance of film is improved, preparation process is simple, and bonding between graphene layer and proton-conducting film is strong.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of alcohol-resistant proton conducting composite film which involves taking chemical vapor deposited graphene substrate, paving surface of graphene-containing layer with film-forming solution containing 5-10 wt.% volatile solvent for 8-12 hours at 60-120 degrees C to obtain proton-conducting film, chemical vapor depositing graphene on proton conductive film by immersing in 0.1-2.5 M Fe3+ solution for 1-14 days to completely etch substrate, washing, and drying.
NOVELTY - A conductive glass is obtained by sequentially laminating sodium ion-blocking layer and aluminum-doped zinc oxide film layer on base layer. The upper surface of the aluminum-doped zinc oxide film layer is textured.    USE - Conductive glass is used for solar battery (claimed).    ADVANTAGE - The conductive glass has improved transmittance of incident light, and light transmittance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of conductive glass.
NOVELTY - Preparing graphene powder material involves adding the graphite oxide in organic alkali solution, ultrasonically dispersing to obtain the graphene dispersion liquid, adding organic boron hydride to obtain the graphene dispersion liquid, rear stirring process solid-liquid separation, drying to obtain the product.    USE - For preparing a graphene powder material (claimed), used in bio-sensing, electronic, electrochemical, solar cells.    ADVANTAGE - The reaction condition is mild, process is simple, the period is short, graphene impurity content is low, has high efficiency, economic and environment-friendly, and it is easy to realize large-scale production.
NOVELTY - Liner titanium dioxide hollow ball comprises hollow wall which grows up pointed cone of sea urchinshaped hollow ball tip cone which is rutile. The hollow ball wall comprises anatase. The diameter of hollow ball is 30-800 nm, and length of cone is 50-200 nm.    USE - As liner titanium dioxide hollow ball (claimed); in photo-catalysis, sensitivity, solar battery.    ADVANTAGE - The liner titanium dioxide hollow ball is prepared by template-free simple hydrothermal method and is of self-assemble into mixed liner TiO2 hollow sphere. The liner titanium dioxide hollow ball is one of n-type semiconductor material, which has excellent quality, which can be widely applied to photocatalysis, gas sensitivity or solar battery.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the liner titanium dioxide hollow ball involving: dissolving Ti(SO4)2 in the water to prepare concentration of water solution of 4-20 mol/ml, stirring to dissolve rear dropping H2O2 solution, where the H2O2 solution and Ti(SO4)2 is a mass ratio of 0.5-2:1, stirring at room temperature to obtain orange solution; adding the orange yellow solution in sodium hydroxide, where the sodium hydroxide and the Ti(SO4)2 are in the mass ratio of 0-3:1, continuously stirring, then the mixed solution to hydrothermal kettle in, separating at 80-160 degrees C processing for 3-24 hours, to obtain the mixed solution, washing by water, drying to obtain the mixed liner TiO2 hollow sphere.
NOVELTY - A surface-coated glass is obtained by coating a silica hydrosol on a glass substrate by immersing, pulling the substrate from the sol, forming an antireflection film on the rear surface of substrate, and depositing a hydrocarbon gas raw material on the antireflection film by plasma-enhanced chemical vapor deposition to form a diamond film layer.    USE - Preparation of surface-coated glass for solar battery assembly (all claimed) e.g. solar cell modules.    ADVANTAGE - The method provides surface-coated glass having excellent light transmittance, hardness, and scratch resistance. The surface-coated glass provides solar cell modules having excellent photoelectric conversion efficiency and prolonged service life.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for solar battery assembly.
NOVELTY - The conductive glass has a glass substrate layer (1), the sodium ion blocking layer (2), conductive layer (3) and a antireflection layer (4) that are stacked sequentially. The antireflection layer made of silicon dioxide, is laminated on top of the conductive layer. The sodium ion blocking layer is made of silicon-nitrogen-oxygen alloy. The conductive layer is made of zinc oxide film, indium tin oxide film, or fluorine doped tin oxide film.    USE - Conductive glass for solar battery, touch screen, LCD device or lighting device application (all claimed).    ADVANTAGE - The visible light transmittance of the conductive glass can be upgraded significantly. The conductive is featured with simple operation, low cost, high production efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing conductive glass.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the conductive glass.    Glass substrate layer (1)    Sodium ion-blocking layer (2)    Conductive film layer (3)    Anti-reflection layer (4)
NOVELTY - A photovoltaic compound is new.    USE - A photovoltaic compound for photovoltaic device e.g. organic solar cell (all claimed).    ADVANTAGE - Preparation process is energy-saving and has high product purity and product is easy to purify.    DETAILED DESCRIPTION - A photovoltaic compound of formula (I) is new.    R1, R3=6-12 carbon-containing straight or branched-chain alkyl;    R2=H or 6-12 carbon-containing straight or branched-chain alkyl; and    n=3.    INDEPENDENT CLAIMS are included for:    (1) preparation of photovoltaic compound; and    (2) preparation of compound of formula (III) which involves subjecting compound of formula (IV) and compound of formula (V) into reaction and refluxing with acetonitrile.
NOVELTY - An ethyl-vinyl acetate film surface coating comprises 15-20 %mass carbon nanotubes, 5-15 %mass nano silica, 3-15 %mass fatty alcohol ethoxylate as dispersing agent, 3-5 %mass silane coupling agent as caking agent, 3-5 %mass propylene glycol butyl ether as additive and 10-30 %mass organic solvent. The mass ratio of fatty alcohol ethoxylate and silane coupling agent is 1:1-3:1.    USE - Ethyl-vinyl acetate film surface coating is used for solar cell.    ADVANTAGE - The ethyl-vinyl acetate film having uniform dispersion of nano silica and carbon nanotubes, favorable conductivity and low yellowing index is formed, by simple process. The solar cell comprising the ethyl-vinyl acetate film has improved photoelectric conversion efficiency.
NOVELTY - An ethyl-vinyl acetate film surface coating contains 5-10 %mass carbon nanotubes, 5-15 %mass nano silica, 3-15 %mass free alkylphenol ether as dispersing agent, 3-5 %mass acrylic acid, 3-5 %mass propylene glycol methyl ether acetate and remainder of organic solvent. The mass ratio of free alkylphenol ether and acrylic acid is 1:1-3:1. The acrylic acid and propylene glycol methyl ether acetate are film-forming additives.    USE - Ethyl-vinyl acetate film surface coating is used for solar cell.    ADVANTAGE - The ethyl-vinyl acetate film having uniform dispersion of nano silica and carbon nanotubes, favorable conductivity and low yellowing index is formed, by simple process. The solar cell comprising the ethyl-vinyl acetate film has improved photoelectric conversion efficiency.
NOVELTY - The coating has a metal reflecting layer formed on the upper of a semiconductor absorption layer. A metal reflecting layer is aluminum, and the semiconductor absorption layer is germanium. An infrared transparent oxide layer is arranged between the metal reflecting layer and the semiconductor absorption layer, where the transparent oxide layer is made of Cr203, Al203 or Ti02. The metal reflection layer is provided with an adhesive layer made of is N1, Ti or Cr203. A reflection film is covered on a conductor layer of an anti-reflection absorption layer and is made of Si3N4 and Si02-SiN4.    USE - Solar energy selective absorbing coating for solar system heat collector.    ADVANTAGE - The solar system heat collector absorbs solar energy to the utmost extent and effectively suppresses infrared radiation, which breaks through the limitation of the traditional high temperature selective absorbing coating.    DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a solar energy selective absorbing coating.
NOVELTY - The semiconductor device (100) has P-type doped layers (113,133) and N-type doped layers (111,131) that are internally electrically connected with each other. An internal electrically connecting layer (12) of P-type doped layer and N-type doped layer is provided with magnesium element and nitrogen element having specific atomic number. The nitrogen element in electrically connected with magnesium element. The electrically connecting layer is formed of oxides of nitride, silicide and carbide, carbon, silicon or metal.    USE - Semiconductor device such as LED, light detector, solar battery, transistor and laser diode (all claimed).    ADVANTAGE - The operation efficiency of the semiconductor device can be improved for improving the luminous efficiency of the LED by providing P-type and N-type doped layers that are provided with internal electrically connecting layer having magnesium element and nitrogen element which are connected with each other.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device.    Semiconductor components (11,13)    Internal electrically connecting layer (12)    Semiconductor device (100)    N-type doped layers (111,131)    P-type doped layers (113,133)
NOVELTY - The battery has a silicon nitride film structure (2) set on a silicon substrate (1). The silicon nitride film structure comprises two silicon nitride film layers, where an refractive index of the silicon nitride film layers along direction is far away from the silicon substrate.    USE - Crystal silicon solar battery.    ADVANTAGE - The battery can control a refractive index of a different silicon nitride film of a reasonable range so as to avoid over-high refractive index of a set of silicon nitride films for producing absorption of light.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a crystal silicon solar battery manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a crystal silicon solar battery.    Silicon substrate (1)    Silicon nitride film structure (2)    Silicon nitride films (21-24)
NOVELTY - Hollow shell-type carbon supported platinum-based nanocatalyst is new.    USE - Hollow shell-type carbon supported platinum-based nanocatalyst used as fuel cell cathode catalyst.    ADVANTAGE - The nanocatalyst has high catalytic activity.    DETAILED DESCRIPTION - Hollow shell-type carbon supported platinum-based nanocatalyst of formula PtMx is new.    M=silver, gold, ruthenium, rhodium, palladium, osmium or iridium; and    x=not less than 0 and not more than 0.95.    An INDEPENDENT CLAIM is included for the preparation of hollow shell-type carbon supported platinum-based nanocatalyst.
NOVELTY - The structure has a supporting plate placed on a base plate that is formed with a top groove. A groove opening is located at a side surface of the top groove. A lower plane and an upper plane of a bottom plate are provided with multiple convex ribs. The supporting plate is provided with a reinforcing rib or lug boss.    USE - Glass fiber reinforced polyurethane material structure for use in a solar panel frame.    ADVANTAGE - The structure has better corrosion resistance, better insulation effect, stable structure, better anti-bending and anti-torsion performance, low production cost, light rear frame weight and high anti-twist strength.    DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a glass fiber reinforced polyurethane material structure.
NOVELTY - The method involves selecting a primary oxygen-argon, vacuumizing by a high purity argon gas and oxygen at an initial working pressure. A middle thin film layer is radio frequency (RF) magnetic control sputtered and deposited on top of a substrate. An indium-tin oxide (ITO) thin layer for magnetic control sputtering reaction chamber process is replaced by middle thin film layer. A secondary oxygen-argon is selected, vacuumized by high purity argon gas and oxygen at a final working pressure. The ITO film layer is RF magnetic control sputtered and deposited on middle thin film layer.    USE - Method for preparing low temperature deposition flexible crystalline ITO transparent conductive film used for industrial LCD, organic light emitting diode and solar battery.    ADVANTAGE - The ITO thin film can be generated with low temperature deposition, good conductivity, high visible light transmission rate and strong adhesive force.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the low temperature deposition flexible crystalline indium tin oxide transparent conductive film. (Drawing includes non-English language text)
NOVELTY - Passivation of crystalline silicon solar cell wafer using silicon heterojunction involves providing silicon hydride as silicon source, carbon dioxide as oxygen source, hydrogen as carrier gas and catalyst, plasma source having frequency of 13.56 MHz, radio frequency source having frequency of 20-1OO MHz or very high frequency source, and performing plasma-assisted chemical vapor phase deposition of crystalline silicon heterojunction solar cell on oxygen-doped hydrogenated amorphous silicon thin film.    USE - Passivation of crystalline silicon solar cell wafer using silicon heterojunction (claimed).    ADVANTAGE - The method economically and efficiently enables passivation of crystalline silicon solar cell wafer using silicon heterojunction.
NOVELTY - This utility new type is suitable for thin film solar battery field, it claims one for scribing device, comprising at least one of the first sliding limiting as the etching device assembly is standard of fixing plate, fixing on a fixing plate of upper device and driving device and a first sliding position-limit device sliding connecting first. Wherein, one end of said first guide pole of fixing cutter set with a bevel, a bevel cutter set up is provided with a mechanical scoring head. Driving device driving said first guide sliding driving up the said first sliding limiting device, so as to drive the said first guide pillar is connected with the mechanical scoring head passes through transmission of encountering of an obstacle in etching process. Because the force of the drive device output and continuously adjustable, so as to ensure the first guide post capable of continuously adjusting the constant of output in scoring, and time barrier of fluctuation or change of force, so that to obtain the width, depth and uniformity of lines in thin film solar battery.
NOVELTY - The manufacturing device has ultra-high vacuum chemical vapor deposition (UHVCVD) reaction chamber (1) having background vacuum degree better than 5 x 10 to 9 Torr, and highest heating temperature of 800 to 1000 degrees centigrade, vacuum transitional chamber (2), wafer buffer chamber (3), and central transfer chamber (4). The central transfer chamber, hot treatment chamber (5) and MOCVD reaction chamber (6) are provided with mechanical pump. The hot treatment chamber has baking temperature of 1400 degrees centigrade. The MOCVD has heating temperature of 800 to 900 degrees centigrade.    USE - Manufacturing device for silicon substrate gallium arsenide epitaxial material used in solar battery.    ADVANTAGE - Improves production efficiency and yield of device. Improves quality of epitaxial material by reducing dust of substrate in transfer process and chemical reagent pollution risk in atmospheric environment, thus improving performance of device. Construction cost and operation cost of clean factory are reduced since cluster device has compact structure and small floor area, thus, production cost of silicon substrate gallium arsenide epitaxial material is also reduced. Prolongs service life of epitaxial chamber, and shortens maintenance time of epitaxial chamber.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing method for silicon substrate gallium arsenide epitaxial material.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a manufacturing device for silicon substrate gallium arsenide epitaxial material.    Ultra-high vacuum chemical vapor deposition reaction chamber (1)    Vacuum transitional chamber (2)    Wafer buffer chamber (3)    Central transfer chamber (4)    Hot treatment chamber (5)    Metal organic chemical vapor deposition reaction chamber (6)
NOVELTY - The method involves locating a silicon chip in nano-titanium dioxide aqueous dispersion. UV light is irradiated by the silicon chip. The silicon chip is insulated with a phosphorus silicon glass by using edge insulating treatment. A crystalline silicon solar cell is provided with a mono-crystalline silicon solar cell, a single crystal solar cell and a polycrystalline silicon solar battery.    USE - Crystalline silicon solar battery silicon oxide film preparation method.    ADVANTAGE - The method enables preparing a crystalline silicon solar battery silicon oxide film in a simple manner, reducing production cost and improving quality of a product.
NOVELTY - The furnace has conveying belt (3) which conveys solar cell substrate (2) through sides of hearth (1), temperature control heating device (4) which coats whole outer wall, baffle plates (11,12) that divide furnace interior into spraying area (5) and reaction area (6), and selenium steam injection device (8) that injects selenium to substrate moved in spraying zone by conveying belt. The upper baffle plate has exhaust hole (51) that discharges inert gas spraying area, and lower baffle plate has inert gas inlet hole (71) that inputs inert gas in reaction area.    USE - Gasification furnace for preparing selenium absorption layer of CIGS solar battery.    ADVANTAGE - Improves selenide effect and efficiency since selenium is sprayed uniformly. Avoids time consuming movement of air entering into reaction zone, and complete exhaustion of reaction zone.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic sectional view of the gasification furnace.    Hearth (1)    Solar cell substrate (2)    Conveying belt (3)    Temperature control heating device (4)    Spraying area (5)    Reaction area (6)    Selenium steam injection device (8)    Baffle plates (11,12)    Exhaust hole (51)    Inert gas inlet hole (71)
NOVELTY - The method involves forming a surface spraying layer on a silicon sheet that is connected with a liquid protective layer. The liquid protective layer is formed on the spraying layer that is connected with a solid protection layer. A silicon chip is connected with a normal chain device. Hafnium/nitric acid (HF/HN03) mixed solution etching process is performed. The silicon chip is connected with the solid protection layer to remove alkali solution. The mixed solution is selected from one of phosphoric acid, sulfuric acid and hydrogen peroxide or ethanol solution.    USE - Solar battery diffusion surface wet etching method.    ADVANTAGE - The method enables improving electric performance and solar battery appearance, reduces solar cell electrical performance failure generating ratio and preventing the protective layer from being damaged during etching process.    DETAILED DESCRIPTION - The protective layer is coated with paraffin or Vaseline (RTM: Petroleum jelly).
NOVELTY - This utility new type upper claims one for solar battery diffusion of diffusion device, comprising a diffusion pipe and spraying pipe, spraying pipe passes through a fixing of the top and is vertical to the diffusion tube section of said diffusion tube, bottom of said spray pipe is provided with one group of the spraying port of the silicon chip in quartz boat for spray phosphorus source to a spray pipe of the spray pipe located in a quartz boat of above, and the length of said quartz boat is equal, the utility model is new type by the phosphorus source directly from the tail is blown into from the upper part spraying of quartz tube blowing, the distribution in the phosphorus diffusion process is more uniform to prevent the liquid medicine in the silicon chip and stability of resistance between the silicon sheet, improves the conversion efficiency of solar battery sheet.
NOVELTY - A glass block (2) is fixed by a clamp. The back side of the glass block is irradiated by laser beam from a laser scribing machine. A scribing groove (11) is formed in the back side of the glass block during the irradiation process. The dust generated and melted during the formation of scribing groove is removed from the glass block using a wiping cloth (10).    USE - Laser scribing method for glass block used in manufacture of solar cell e.g. copper indium gallium selenide (CIGS) thin film solar cell.    ADVANTAGE - The adhesion state of CIGS film on the glass block is improved by removing the dust on the glass block before the formation of CIGS film on the glass block. The scribing groove is formed with high precision by using the laser scribing machine. The improvement of the characteristic of the solar cell is possible.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the cleaning of glass block using the wiping cloth.    Glass block (2)    Spring (9)    Wiping cloth (10)    Scribing groove (11)
NOVELTY - Synthesizing (M1) a copper zinc tin sulfide (Cu2ZnSnS4) conformal layer, involves: depositing, via atomic layer deposition, a copper(I) sulfide (Cu2S) layer; depositing, via atomic layer deposition, a tin(IV) sulfide (SnS2) layer on the Cu2S layer; and depositing, via atomic layer deposition, a zinc sulfide (ZnS) layer on the SnS2 layer; and forming Cu2ZnSnS4 from the Cu2S layer, ZnS layer, and the SnS2 layer.    USE - For synthesizing a copper zinc tin sulfide conformal layer; and for synthesizing and depositing chalcogenides including Cu2ZnSnS4 (all claimed) used in photovoltaic applications such as solar cells.    ADVANTAGE - In the improved method, binary compounds, such as metal sulfides can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor such as H2S with purge steps between. The method allows for the synthesis of Cu2ZnSnS4, a potentially low cost semiconductor being explored for photovoltaic applications. Also, it allows for the synthesis and deposition of complex chalcogenides such as Bi2Te2Se, Bi2Te2S and SnBi2Te4.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) synthesizing and depositing (M2) chalcogenides involving: creating n first sulfide/second sulfide/third sulfide stacks by: depositing, via x cycles of atomic layer deposition, a first sulfide layer; depositing, via y cycles of atomic layer deposition, a second sulfide layer; and depositing, via z cycles of atomic layer deposition, a third sulfide layer; and    (2) depositing SnS2 on a substrate, involving: exposing the substrate to tetrakis(dimethylamido)Sn(IV) for 1 second; purging for 20 seconds with an inert gas; exposing the substrate to hydrogen sulfide (H2S) for 1 second; and purging for 20 seconds with nitrogen.
NOVELTY - The method involves preparing a substrate, where the substrate is a glass substrate or metal foil. A polycrystalline silicon layer is arranged on the substrate. A metal pattern layer is arranged on the polycrystalline silicon layer through a wet etching process. A poly-crystal silicon nanostructure is formed in the polycrystalline silicon layer through a dry etching process. The metal pattern layer is removed. The metal pattern layer is made of silver or gold. Thickness of the metal pattern layer is 100-400 nm.    USE - Method for manufacturing a polycrystalline silicon thin film nano structure of a polycrystalline silicon thin film solar cell (claimed).    ADVANTAGE - The method enables efficiently manufacturing the poly-crystal silicon nanostructure with better light trap effect in a cost effective manner, so that fabrication cost of a poly-crystal silicon thin film solar cell can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a polycrystalline silicon thin film solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating a polycrystalline silicon thin film nano structure manufacturing method. '(Drawing includes non-English language text)'
NOVELTY - A photoelectric conversion element (1) comprises conductive-type semiconductor substrate (3), conductive-type semiconductor film (8) provided on one surface of the semiconductor substrate, conductive-type semiconductor film (13) provided independently from the semiconductor film (8), on the surface, dielectric film (4,7,12) provided between semiconductor substrate and the semiconductor film (8) and/or between semiconductor substrate and the semiconductor film (13) and intermetallic compound layer (15) formed on the semiconductor film (8) and the semiconductor film (13).    USE - Photoelectric conversion element is used for solar cell.    ADVANTAGE - The photoelectric conversion element has high photoelectric conversion efficiency, and is efficiently manufactured by a simple process.    DETAILED DESCRIPTION - A photoelectric conversion element comprises conductive-type semiconductor substrate, conductive-type semiconductor film (8) provided on one surface of the semiconductor substrate, conductive-type semiconductor film (13) provided independently from the semiconductor film (8), on the surface, dielectric film provided between semiconductor substrate and the semiconductor film (8) and/or between semiconductor substrate and the semiconductor film (13) and intermetallic compound layer formed on the semiconductor film (8) and the semiconductor film (13).    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the photoelectric conversion element.    Photoelectric conversion element (1)    Conductive-type semiconductor substrate (3)    Dielectric films (4,7,12)    Conductive-type semiconductor films (8,13)    Intermetallic compound layer (15)
NOVELTY - The functional film has an easily bonding layer (20) which is provided between an organic layer (14) and a substrate (12). An inorganic layer (16) is occupied 10% of thickness of the organic layer, and that is comprised with particles (20a) that are derived from the easily bonding layer in amount of 15 % or less. A particle size of the particles in the easily bonding layer is in 0.01-0.1 micrometer, and the inorganic layer is provided with a silicon nitride. The thickness of the inorganic layer is 10-100 nm. The thickness of the organic layer is 0.5-5 micrometers.    USE - Functional film such as gas barrier film used for solar cell and organic electroluminescent display. Can also be used in optical film, protective film, and antireflection film for semiconductor device and display apparatus such as liquid crystal display.    ADVANTAGE - Since the particles of the easily bonding layer are derived to the inorganic layer, the high optical characteristic of the functional film can be acquired effectively. The performance of the functional film can be improved in effective manner. Since the opposing surface of the shower electrode is roughened by film-forming of spray deposit film, the peeling of the deposited film forming material can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of functional film.    Substrate (12)    Organic layer (14)    Inorganic layer (16)    Easily bonding layer (20)    Particle (20a)
NOVELTY - The radiation-detecting semiconductor component (10) comprising silicon substrate (1) having a surface structure (3) provided facing a radiation entrance surface (5) of the semiconductor component and extended to a depth of 100 nm into silicon substrate. A radiation-absorbing layer (2) with thickness of not more than 1 mu m is provided for absorbing radiation with a wavelength greater than 1100 nm.    USE - Radiation-detecting semiconductor component such as photo detector or solar cell (CLAIMED).    ADVANTAGE - The radiation-detecting semiconductor component with high sensitivity in the infrared spectral region, and is suitable for applications at high frequencies is manufactured efficiently at low cost.    DESCRIPTION OF DRAWING(S) - The drawings show the cross-sectional views of the radiation-detecting semiconductor component.    Silicon substrate (1)    Radiation-absorbing layer (2)    Surface structure of silicon substrate (3)    Radiation entrance surface of semiconductor component (5)    Radiation-detecting semiconductor component (10)
NOVELTY - The method involves plating a first metal layer (430) on a solar cell (400) by conducting first current through a seed metal layer (420) of the cell along a first direction at first voltage for first time using an excess plated metal (439) in an electroplating bath. Metal is ejected from the metal layer by conducting second current through the cell along a second direction at second voltage for second time. Additional metal is plated to the metal layer subsequent to eject metal from the first metal layer by conducting third current at third voltage for third time along the first direction.    USE - Method for plating a metal layer on a solar cell utilized to convert solar radiation to electrical energy.    ADVANTAGE - The method enables forming an anti-reflective coating (ARC) over a texturized surface and a front side to improve light absorption properties of the solar cell, thus improving plating metal and removing contaminants from the solar cell during manufacturing, and hence reducing fabrication steps, improving overall output yield, decreasing overall solar cell manufacturing time and increasing available product yield due to less handling. The method enables showing waveform within a voltage output display for plating metal on the solar cell without plating metal along solar cell edges, thus eliminating the need for various standard edge coating, etching and protection processes.    DETAILED DESCRIPTION - The metal is selected from a group containing copper, tin, tungsten, titanium, titanium tungsten, silver, gold, titanium nitride, tantalum nitride, ruthenium and platinum.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a solar cell.    Solar cell (400)    Seed metal layer (420)    Metal layer (430)    Excess plated metal (439)    Enclosure (495)
NOVELTY - Preparation of ceramic sintered compact involves preparing mixture of silicon carbide powder and powdery pyrolyzed silicon-organic polymer, and compacting at 1200-2500 degrees C under inert atmosphere or vacuum of 1 MPa or more. The content of powdery pyrolyzed silicon-organic polymer with respect to total mixture of silicon carbide powder and powdery pyrolyzed silicon-organic polymer is 45 wt.% or more.    USE - Preparation of ceramic sintered compact. Uses include but are not limited to mounting plate of electronic component and photovoltaic solar cell, gasket of mechanical seal, slide bearing, wear-stable component, and construction component of high-temperature chemical plant.    ADVANTAGE - The method provides ceramic sintered compact having high strength, hardness, corrosion resistance, thermal conductivity, tribological property and wear resistance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for ceramic sintered compact.
NOVELTY - A hydrogen fuel cell ion exchange membrane is prepared by mixing 5-8 parts polyvinylidene fluoride, and 10 wt.% sodium hydroxide solution, reacting for 3-4 hours, soaking in benzyl alcohol solution at room temperature for 3-5 hours to absorb alcohol solution, drying polymer film in glass plate with 2 glass extension layers at 90 degrees C for 3 hours, soaking in triamine acid ester solution 2 hours, removing, and drying.    USE - Preparation of hydrogen fuel cell ion exchange membrane (claimed).    ADVANTAGE - The membrane has high electronic conductivity, and good tensile strength, and method is low cost.
NOVELTY - A glass film (1) comprises glass board material (10) having thickness of 200 mu m or less, and blocking prevention layer (20) positioned on one surface (10a) of glass board material. The blocking prevention layer contains thermosetting resin (21) and microparticles (22). The static friction coefficient between the surface (20a) of the blocking prevention layer and the other side of the glass board material is 1 or less. The glass film has basterisk values of -1 to 1, after heating at 300 degrees C for 30 minutes.    USE - Glass film is used for film roll (claimed), organic electroluminescent display, electronic paper, touch screen, image display apparatus, liquid crystal display and solar cell.    ADVANTAGE - The economical and lightweight glass film comprises glass board material having excellent gas barrier property, stability and flexibility. The surface of blocking prevention layer has excellent strength and transparency, and reduced static friction coefficient property, and blocking inhibitory effect. The thermosetting resin has excellent heat resistance, adhesiveness, and is hard to discolor even the transparent conductive film heated at 200-300 degrees C. The generation of crack in blocking prevention layer during heating at high temperature is suppressed.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for film roll.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of glass film.    Glass film (1)    Glass board material (10)    Surface of glass board material (10a)    Blocking prevention layer (20)    Surface of blocking prevention layer (20a)    Thermosetting resin (21)    Microparticles (22)
NOVELTY - The method involves supplying gas in a chamber, while gas is ejected toward a base material (2) from an elongate opening portion formed in the chamber. An opening portion is formed in the chamber along an elongate direction for processing the surface of the base material, by moving the base material along vertical direction to relatively a plasma jet which is irradiated toward the base material from the opening portion. The surface of base material is processed for forming flow of gas in direction of relative movement.    USE - Method for processing plasma such as thermal plasma such as ion, electron and neutral atom used for polycrystalline silicon semiconductor film used for manufacturing polycrystalline silicon thin film transistor (poly-SiTFT) and solar cell.    ADVANTAGE - The opening portion is formed in the chamber along the elongate direction for processing the surface of the base material, by moving the base material along vertical direction to relatively plasma jet which is irradiated toward the base material from the opening portion, such that the processing of the surface vicinity of the base material can be performed uniformly. The high temperature heat processing can be performed at short time. The excellent reproducibility of the temperature profile of base material can be achieved. The temperature control property can be ensured.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for plasma processing apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the plasma processing apparatus.    Base material (2)    Solenoid coil (3)    Quartz blocks (4,5)    Space (7)    Plasma jet nozzle (8)
NOVELTY - The reactor has a reaction layer extending in a two-dimensional plane subtended by two directions. Chemical cells (CC) include circuit portions (CP1,CP2) for circulation of chemical fluids (A,B). A fluid distribution circuit include sets of inlet orifices (IA,IB) to respectively dispense chemical fluids to reaction layer, and sets of outlet orifices (OA',OB') to respectively collect chemical fluids from reaction layer. Each circuit portion connects respective inlet and outlet orifices. The outlet orifices are shifted along one direction with respect to inlet orifices.    USE - Electrochemical reactor for photovoltaic apparatus (claimed) and microelectronic packaging. Can also be used in fuel cell, reduction-oxidation flow battery, hydrogen reformer, artificial photosynthesizer and micro channel heat sink.    ADVANTAGE - Since different dimensions and shapes are provided for the channel portions, orifices can be more easily processed using different materials. The reactor allows high electrochemical power densities through efficient microstructures, and is highly scalable from small footprints to large footprints, without loss of power density. The reactor provides reduced complexity, since fluid separation by laminar flow is applicable. Efficient electrochemical energy storage and delivery can be enabled, due to reduced wiring resistance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a photovoltaic apparatus; and    (2) a method for operating photovoltaic apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a two-dimensional view of the chemical cell used in electrochemical reactor.    Chemical fluids (A,B)    Chemical cells (CC)    Circuit portions (CP1,CP2)    Inlet orifices (IA,IB)    Outlet orifices (OA',OB')
NOVELTY - Mixture comprises at least two or more different triaryl amino compounds (I).    USE - The mixture is useful: in an electronic device including organic integrated circuits, organic FETs, organic thin-film transistors, organic light-emitting transistors, organic solar cells, organic optical detectors, organic photoreceptors, organic field-quench devices, organic light emitting electrochemical cells, organic laser diodes and organic electroluminescent devices; and as a hole transport layer (all claimed).    ADVANTAGE - The mixture increases the service life, performance and power efficiency of the electronic device.    DETAILED DESCRIPTION - Mixture comprises at least two or more different triaryl amino compounds of formula (I).    Ar1 = aryl or heteroaryl ring system having 5-60 aryl ring atoms (both optionally substituted with one or more radicals of R1);    R1 = H, D, F, C(=O)R2, CN, Si(R2)3, P(=O)(R2)2, S(=O)R2, S(=O)2R2, linear 1-20C-alkyl, -alkoxy or -thioalkyl, branched or cyclic 3-20C-alky, -alkoxy or -thioalkyl, 2-20C-alkenyl or -alkynyl, where the above-mentioned groups are optionally with substituted one or more radicals of R2, one or more CH2 groups are replaced by -R2C=CR2-, -CC-, Si(R2)2, C=O, C=S, C=NR2, -C(=O)O-, -C(=O)NR2-, P(=O)(R2), -O-, -S-, SO or SO2 and one or more H atoms are substituted by D, F or CN, aryl or heteroaryl ring system having 5-30 aryl ring atoms (both optionally substituted by one or more radicals R2), or aryloxy or heteroaryloxy group having 5-30 aromatic ring atoms (both optionally substituted by one or more radicals R2); either    R2 = H, D, F, or aliphatic, aryl or heteroaryl organic radical having 1-20C, in which one or more H atoms are replaced by D, or F; or    R2R2 = a ring.    An INDEPENDENT CLAIM is included for a formulation comprising the mixture, and at least one solvent.
NOVELTY - A transition metal compound-loaded titanium oxide suspension contains transition metal compound-loaded titanium oxide in which a transition metal compound is loaded on crystalline titanium oxide. The transition metal compound-loaded titanium oxide has an average aspect ratio (major axis/minor axis) of 1.5 or greater. The content of the transition metal compound-loaded titanium oxide is 4 wt% or more. The electric conductivity of the supernatant of the suspension is 300 ( mu )S/cm or less.    USE - Transition metal compound-loaded titanium oxide suspension is used for obtaining transition metal compound carrying titanium oxide (claimed), indoor wallpaper and furniture in home, hospital, school and high functionalization of a domestic electrical appliance, and antimicrobial, an antifungal, deodorizing, air purification, water purification, and stain-resistance. Uses include but are not limited to cover of a solar water heater heat collecting cover, a fuel cell, an optical fiber, and the illuminating lamp for vehicles, a fishing net, a rope, a hose, a ship's-bottom component, an antialgae material, shoes, a bag, a blind, a curtain, etc.    ADVANTAGE - The transition metal compound-loaded titanium oxide suspension has reduced ionic impurity, and excellent in responsiveness with respect to visible light.    DETAILED DESCRIPTION - An independent claim is included for transition metal compound carrying titanium oxide, which is obtained by drying transition metal compound-loaded titanium oxide suspension.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of rod-shaped rutile-type titanium dioxide.
NOVELTY - An organocopper complex (I) is new.    USE - Organocopper complex for organocopper solution used for forming copper oxide thin film (all claimed) used for solar cell and thin film semiconductor device.    ADVANTAGE - The organocopper complex enables formation of copper oxide thin film at low temperature.    DETAILED DESCRIPTION - An organocopper complex of formula (I) is new.    R11,R12,R21,R22=1-20C alkyl, 2-20C non-aromatic hydrocarbyl having unsaturated bond, 6-20C aryl or 3-20C heteroaryl, in which H is C-H bond are optionally substituted by monovalent substituent;    R11+R21,R12+R22=ring;and    R31,R32=H, 1-20C alkyl, 1-20C alkoxy, 2-20C non-aromatic hydrocarbyl having unsaturated bond, 6-20C aryl, 3-20C heteroaryl or hydroxy, in which H is C-H bond are optionally substituted by monovalent substituent.    When R11,R12,R21,R22 are methyl, R31 and R32 are alkyl, aryl, alkoxy or hydroxy. INDEPENDENT CLAIMS are included for the following: (i) organocopper complex solution containing the organocopper complex and a solvent; (ii) copper oxide thin film formed by drying and heat processing coating film of the organocopper complex solution; (iii) formation of copper oxide thin film, which involves coating the organocopper complex solution on a base material, forming a coating film, drying, and heating at 230-300 degrees C; and (iv) dioxane compound of formula (II) used as ligand for forming organocopper complex.    R13,R23=R11;and    R33=R31.
NOVELTY - The sensor has a solar cell that is connected to an energy storage device i.e. micro-battery or lithium battery. A positive terminal is provided in the energy storage device. A MOSFET transistor is arranged with a drain terminal that is connected to a terminal of the energy storage device through a load. A terminal of a gate is connected to a touch pad for detection of microvolt variations generated due to touching of the finger on the touch pad. The variations are returned to a MOSFET driver, and current is passed from the energy storage device towards a circuit load i.e. generator.    USE - Touch/capacitive sensor for use in automation projects in an area. Uses include but are not limited to apartment, house, office or industrial environment.    ADVANTAGE - The microvolt variations are returned to the MOSFET driver, and current is passed from the energy storage device towards the circuit load, thus ensuring charging of the battery by solar source, and ensuring autonomy of the sensor in an autonomous manner for a lifetime of about ten years without replacement of the battery. The sensor is simple to configure, install, use and is inexpensive.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a remote control.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a self-powered touch switch.'(Drawing includes non-English language text)'
NOVELTY - A solar battery surface reflective film coating contains 70 wt.% tetrabutyl titanate, 15 wt.% n-butyl acetate, and 15 wt.% isooctyl alcohol. Reflective film coating is prepared by atmospheric pressure chemical vapor deposition method.    USE - A solar battery surface reflective film coating (claimed).    ADVANTAGE - The reflective film coating increases thickness and density of titanium dioxide film and exhibits good solar energy absorption ability and high energy conversion efficiency.
NOVELTY - The method involves removing a surface energy damage layer from polysilicon/single crystal silicon wafer. Diffusion process is performed on the polysilicon/single crystal silicon wafer to form a PN junction layer. A surface of a silicon chip is covered with a dielectric layer or mask layer. Chemical corrosion process is performed to form a mask layer on a non-electrode grid line region. Reactive ion etching process is performed on a pyramid suede structure to form a selective emitter structure. Thickness of the polysilicon/single crystal silicon wafer is determined.    USE - Polysilicon/single crystal silicon solar cell selective emitter structure manufacturing method.    ADVANTAGE - The method enables simplifying manufacturing process and improving conversion efficiency and mass production.    DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view of a polysilicon/single crystal silicon wafer.
NOVELTY - The aluminum-doped zinc oxide thin film preparation method involves heating a quartz substrate under a working gas at a given temperature, pressure, and vacuum degree. The quartz substrate undergoes a pre-sputtering to obtain a target material. The quartz substrate's target material undergoes a direct current magnetron sputtering at 3-6 revolutions per minute for 5-25 minutes on one section, and 8-10 minutes for another section, and is cooled at a room temperature to obtain an aluminum-doped zinc oxide thin film.    USE - Aluminum-doped zinc oxide thin film preparation method for solar cells, LCD monitors, or heat reflectors.    ADVANTAGE - Achieves a low cost and easier preparation method of an aluminum-doped zinc oxide thin film that has excellent performance.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of an aluminum-doped zinc oxide thin film at a-axis and c-axis orientations.
NOVELTY - Making (M1) a polymer involves: contacting the silylalkynyl dialkoxyl arylaldehyde and the leaving group-substituted dialkoxyl arylphosphonate under conditions that provide for coupling of the silylalkynyl dialkoxyl arylaldehyde and the leaving group-substituted dialkoxyl arylphosphonate to provide leaving group-substituted silylalkynyl diarylethene.    USE - For making a polymer such as for making regioregular aryl ethynyl-aryl vinyl copolymer (claimed) which is used for electronics application e.g. as active layers in light-emitting diodes, plastic lasers, light emitting-electrochemical cells, thin film transistors, and chemical sensors; and also in solid-state electronic devices and solar cells.    ADVANTAGE - The polymer obtained by the present method has high crystallinity, red-shifted absorptions in the optical region, greater conductivity, and (usually) a smaller band-gap compared to the regiorandom versions of the same polymer.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) new silylalkynyl dialkoxyl arylaldehyde compound of formula (I);    (2) new leaving group-substituted dialkoxyl arylphosphonate compound of formula (II);    (3) new leaving group-substituted silylalkynyl diarylethene monomer of formula (III); and    (4) producing (M2) the monomer.    R1a, R1b, R2a and R2b=1-20C alkyl, 2-20C alkene, 2-20C alkyne or alkylene glycol;    R5=1-20C alkyl;    R3 and R4=1-20C alkyl;    X=hydroxide, alkoxide, astatine, iodine, bromine, chlorine, or fluorine, triflate (CF3SO3-), mesylate (CH3SO3-), tosylate (CH3C6H4SO2-), or besylate.
NOVELTY - An acidophilic microbial fuel cell comprises acidophilus bacteria culture medium as anode and air as cathode.    USE - An acidophilic microbial fuel cell for culturing acidophilic microorganisms (claimed).    ADVANTAGE - Acidophilic microbial fuel cell generates electricity and has short culturing period and high culture and microbial activity.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for culture method of acidophilic microorganisms which involves assembling up-flow-type or cup-type microbial fuel cell using acidophilic bacteria culture medium as anode solution and air as cathode, sending fresh culture medium from anode, culturing to turn culture medium from light green to reddish brown and obtain cultured acidophilic microorganism culture medium, and discharging from cathode to obtain acidophilic microorganisms.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of an up-flow-type acidophilic microbial fuel cell. (Drawing includes non-English language text).
NOVELTY - Solution of polyamide, comprises an aromatic copolyamide, and a solvent.    USE - The solution of polyamide is useful for manufacturing display element, optical element and illumination element (claimed) including organic electroluminescent element, liquid crystal element, organic electroluminescent illumination, thin film transistor element and color filter element, which is useful in photoelectric complex circuit, thin-film-transistor-LCD, displays and solar cell panels, organic LED for LCDs in mobile phone display and digital camera.    ADVANTAGE - The solution of polyamide provides display, optical and illumination elements with improved flexibility, thermal stability, coefficient of thermal expansion and oxygen and moisture barrier properties, and high transparency during high temperature processing. The display, optical and illumination elements are light in weight and easy to handle, and have low transportation costs.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) manufacturing the solution of an aromatic copolyamide, comprising (a) forming a mixture of two or more aromatic diamines, (b) dissolving the aromatic diamine mixture in a solvent, (c) reacting the diamine mixture with at least one aromatic diacid dichloride, where hydrochloric acid or a polyamide solution is generated, and (d) eliminating the hydrochloric acid with a reagent; and    (2) manufacturing a display element, an optical element or an illumination element, comprising the steps (a)-(d) as above per se, to obtain polyamide solution, (e1) applying the solution of aromatic copolyamide onto a base, (f1) forming a polyamide film on the base after the applying step (e1), and (g1) forming the display element, the optical element or the illumination element on the surface of the polyamide film.
NOVELTY - The three-dimensional (3D) nanoplasmonic structure (100) has multiple nanorods (130) formed on a substrate (110). Metal nanoparticles (150) are formed on surfaces of the substrate and the nanorods. Preferably, the nanorods comprise an oxide semiconductor material, a metal oxide, an insulating material or carbon nanotubes.    USE - 3D nanoplasmonic structure for optoelectronic device (claimed), e.g. optical biosensor, and fluorescence spectroscopy. Can also be used in light-emitting device, solar battery and secondary battery.    ADVANTAGE - Controls and amplifies light absorption band since metal nanoparticles strongly and distinctively interact with electromagnetic wave due to surface plasmon resonance phenomenon. Enables adjustment of peak wavelength band of optical absorbance spectrum by using dewetting process.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a 3D nanoplasmonic structure manufacturing method; and    (2) a surface plasmon resonance frequency adjusting method.    DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of a 3D nanoplasmonic structure.    3D nanoplasmonic structure (100)    Substrate (110)    Nanorods (130)    Metal nanoparticles (150)
NOVELTY - Structure comprises: a chemically patterned substrate, where the chemical pattern comprises discrete regions of a first chemical functionality surrounded by a second chemical functionality; and a phase separated block copolymer thin film overlying the chemically patterned substrate. The thin film includes discrete elements of a first phase in a matrix of a second phase, where a first set of the discrete elements of the first phase overlie the discrete regions of the first chemical functionality, and a second set of the discrete elements overlie the second chemical functionality.    USE - The structure is useful: in semiconductor processing, nanoscale filtering and preparation of separation membranes; as catalyst support; in fuel cells; and as etch mask in pattern transfer applications.    ADVANTAGE - The structure: is thermodynamically stable complex three-dimensional film; utilizes the thin film copolymer, which exhibits bicontinuous morphologies; can be prepared by a method, which is efficient in controlling the film morphology; and is defect free.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for fabricating the structure, comprising: providing (401) the chemically patterned substrate; depositing (403) a layer of material comprising a block copolymer on the substrate; and inducing (405) the material to undergo micro-phase separation, thus forming the phase separated block copolymer thin film on the chemical pattern.    DESCRIPTION OF DRAWING(S) - The figure shows a flowchart of a process of forming the registered block copolymer film having complex morphology on a substrate.    Forming the registered block copolymer film (400)    Providing step (401)    Depositing step (403)    Inducing step (405)
NOVELTY - The thin film forming method involves cleaning a process chamber by flowing a first gas with fluorine in process chamber (402) and coating the process chamber with a first encapsulating layer with amorphous silicon by flowing a second gas for a first duration into the process chamber (404). A substrate is loaded into the process chamber (406) after coating with first encapsulating layer. A thin film is deposited on the substrate by flowing a third gas into the process chamber (408). The substrate is unloaded from the process chamber (410).    USE - Forming method for thin film on substrate.    ADVANTAGE - Enables forming a thin film on a substrate which provides additional protection against fluorine contamination by coating the process chamber with an encapsulating layer and shows improved refractive index and solar cell efficiency performance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a silicon nitride film forming method on solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart representation of forming a thin film on a substrate.    Process chamber cleaning step (402)    Process chamber coating step (404)    Substrate loading step (406)    Thin film depositing step (408)    Substrate unloaded step (410)
NOVELTY - Double-layer antireflection coating process of mono-crystalline silicon solar cell involves introducing ammonia gas and silane into reaction chamber, controlling the ammonia gas flow rate and silane flow rate, controlling pressure of the reaction chamber to 1500-1600 mTorr, coating, vacuumizing reaction chamber, introducing ammonia gas and silane or 15-20 seconds, controlling the ammonia gas flow rate and silane flow rate, controlling the pressure of reaction chamber to 1500-1600 mTorr, coating and introducing nitrogen gas under normal pressure.    USE - Double-layer antireflection coating process of mono-crystalline silicon solar cell (claimed).    ADVANTAGE - The silicon solar cell is manufactured efficiently with excellent workability.    DETAILED DESCRIPTION - Double-layer antireflection coating process of mono-crystalline silicon solar cell involves introducing ammonia gas and silane into reaction chamber for 15-20 seconds, controlling the ammonia gas flow rate of 6300-6400 sccm and silane flow rate of 1400-1500 sccm, controlling the pressure of the reaction chamber to 1500-1600 mTorr, coating at 450-460 degrees C for 100-110 seconds under radiofrequency power is 6300-6500 W, vacuumizing reaction chamber, introducing ammonia gas and silane or 15-20 seconds, controlling the ammonia gas flow rate of 7100-7200 sccm and silane flow rate of 600-700 sccm, controlling the pressure of reaction chamber to 1500-1600 mTorr, coating at 450-460 degrees C for 560-570 seconds under radio frequency power of 6300-6500 W and introducing nitrogen gas under normal pressure.
NOVELTY - A metal silicide is formed on silicon substrate by making liquid ammonia which dissolves metal adhere on surface of silicon substrate, evaporating ammonia from silicon substrate, and heating silicon substrate in inert atmosphere.    USE - Formation of metal silicide on silicon substrate for solar cell (all claimed).    ADVANTAGE - Consumption of electric power or is reduced, cheap manufacturing equipment can be used, and operation cost of manufacturing process can be reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for silicon substrate containing barium silicide (BaSi2) thin film.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the procedure of the metal silicide formation method. (Drawing includes non-English language text).
NOVELTY - A vapor deposition material is obtained by mixing metallic silicon and silicon oxide, and heating. The vapor deposition material has volume density of 0.6-2 g/cm3. The ratio of number of oxygen atoms and silicon is 1.2-2. The silicon oxide is 20% or more silicon dioxide containing crystal structure.    USE - Vapor deposition material is used for transparent gas-barrier vapor deposition film (claimed). Uses include but are not limited to packaging material for foodstuffs, pharmaceuticals, hard disks, semiconductor modules, and back sheet and front sheet of solar cells.    ADVANTAGE - The vapor deposition material has high gas-barrier property and productivity, and reduced splash phenomenon.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for transparent gas-barrier vapor deposition film (8).    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of transparent gas-barrier vapor deposition film.    Polymer film base material (1)    Inorganic oxide film (2)    Transparent gas-barrier vapor deposition film (8)
NOVELTY - The battery (10) has an insulating part (22) covering a projection surface (28) of a rectangular-shaped electric power generation element (21) along lamination direction. Elongation rate of a surface area /insulating part (17) corresponds to thickness of a cell layer (19) at time of extension of the insulating part. Internal stress is less than breaking stress of the insulating part. A battery cladding-material (29) is equipped with the insulating part. Two electrical power collectors (11, 12) are connected with two current collecting plates (25, 26).    USE - Laminated structure battery i.e. laminated-type non-aqueous electrolyte lithium ion secondary battery, for use in vehicle. Uses include but are not limited to an electric vehicle, a hybrid electric vehicle, a fuel-cell vehicle and a hybrid fuel cell electric vehicle.    ADVANTAGE - The internal stress is less than the breaking stress of the insulating part so as to avoid formation of a current path, so that foreign material i.e. nail, can be insulated and blocked in an easy manner, thus suppressing internal resistance of the battery in a better manner. The battery is inexpensive.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a compound assembled battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a laminated structure battery.'(Drawing includes non-English language text)'    Laminated structure battery (10)    Electrical power collectors (11, 12)    Surface area /insulating part (17)    Cell layer (19)    Rectangular-shaped electric power generation element (21)    Insulating part (22)    Current collecting plates (25, 26)    Projection surface (28)    Battery cladding-material (29)
NOVELTY - A glass powder comprises 1-30 wt.% phosphorus pentoxide, 10-50 wt.% bismuth oxide, 1-10 wt.% boron trioxide, 1-15 wt.% silica, 0-10 wt.% alumina, 0-10 wt.% zinc oxide, 0-10 wt.% manganese dioxide and 0-5 wt.% iron(III) oxide. The content of the alumina, zinc oxide, manganese dioxide and iron(III) oxide content are not simultaneously zero.    USE - Glass powder is used for silver paste for solar cell.
NOVELTY - An apparatus comprises crucible which contains silicon material in a molten state and installed in order to rotate, induction coil, and susceptor which is installed at the outside of the crucible. The seed melt which is initial melting of the silicon material in the bottom central portion of the crucible. The silicon material is installed in order to cover the lower portion of the crucible and heated by the induction coil with electromagnetic induction.    USE - Apparatus is used for manufacturing poly-crystal silicon for solar battery.
NOVELTY - The method involves forming an emitter region (3) having one doping type at a front side of a crystalline silicon substrate having another doping type. A doped dielectric layer of one doping type is provided on the front surface of the crystalline silicon substrate. An antireflection coating is deposited on the doped dielectric layer. A metal pattern is screen printed on the antireflection coating. The screen printed metal pattern is fired through the antireflection coating and the doped dielectric layer for forming screen printed emitter contacts.    USE - Method for fabricating silicon photovoltaic cell e.g. passivated emitter rear contacted (PERC) silicon solar cell.    ADVANTAGE - The performance gain in open circuit voltage is improved due to the enhanced passivation from the oxide. Hence the efficiency of the silicon photovoltaic cell is improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the front-Side lifetime investigation structure.    PERC cell (1)    Wafer (2)    Emitter region (3)    Thermal oxide (4)    PECVD silicon nitride layer (5)
NOVELTY - A composite material contains magnetic material powder and polymeric material which includes the powder in a dispersed state. The content of the magnetic material powder with respect to total composite material is more than 50 vol.% and 75 vol.% or less. The saturation magnetic flux density of the composite material is more than 0.6T. The relative magnetic permeability of the composite material is 35 or less and more than 20.    USE - Composite material is used reactor for converter for power converter device (all claimed). Uses include but are not limited to bidirectional DC-DC converter, converter of air conditioning machine, hybrid vehicle, plug-in hybrid motor vehicle, electric vehicle and fuel cell electric vehicle.    ADVANTAGE - The composite material provides reactor with suppressed loss.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for reactor (1).    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of reactor.    Reactor (1)    Coil (2)    Magnetic core (3)    Case (4)    Attaching portion (41)
NOVELTY - The method involves forming a metallic film (250) with average thickness of less than or equal to 50 nm on a substrate (100). The metallic film is subjected to a heat processing treatment for changing the configuration of the metallic film into the metallic particle assembly (200) in which several silver made metallic particles (201) are arranged space apart in two-dimensional direction. The temperature of the heat processing treatment is more than 280 degrees C. A coating liquid is coated on the metallic film of the substrate.    USE - Method for manufacturing metallic particle assembly for use in optical element such as organic electroluminescent element, inorganic electroluminescent element such as inorganic LED, quantum dot light emitting element and photoelectric conversion element such as solar cell element.    ADVANTAGE - Since the metallic film is subjected to a heat processing treatment, the metallic particle can be manufactured in desired shape with sufficient control. The luminous efficiency and conversion efficiency of the optical element can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the manufacturing process of the metallic particle assembly.    Substrate (100)    Metallic particle assembly (200)    Metallic particle (201)    Metallic film (250)    Surface area of thermally decomposed metallic film (255)
NOVELTY - The device (2) has a semiconductor device (Q) that is positioned on pattern of copper plate layer (10a) positioned on a ceramic substrate (10). The electric power system terminal and signal system terminal are electrically connected with the semiconductor device. A resin layer is formed to cover the semiconductor device and ceramic substrate. The signal system terminal is extended and positioned in orthogonal direction with respect to the main surface of the ceramic substrate.    USE - Power module semiconductor device used in inverter apparatus (claimed) such as 3-phase alternating current inverter apparatus and full bridge inverter apparatus. Can also be used in-vehicle, solar cell, industrial apparatus and consumer application apparatus and converter.    ADVANTAGE - The structure of the power module semiconductor device can be simplified. The number of components required during manufacture of power module semiconductor device can be reduced.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) the manufacturing method of the power module semiconductor device;    (2) the metal mold; and    (3) the inverter apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the power module semiconductor device.    Power module semiconductor device (2)    Ceramic substrate (10)    Copper plate layer (10a)    Columnar electrode (20)    Semiconductor device (Q)
NOVELTY - A separator consists of a base material having an inner surface and an outer surface, and inorganic particles provided on the outer surface and the inner surface of the base material. The base material has porosity of 55% or more, and average flow pore diameter of 30 mu m or less. The average particle diameter of the inorganic particles is 1-4 mu m. The content of inorganic particles having diameter of 1 mu m or less is 40 vol.% or less. The content of inorganic particles having diameter of 2 mu m or more is 30-75 vol.%.    USE - Separator is used for electrochemical element e.g. lithium-ion secondary battery (all claimed) for hybrid vehicles and electric vehicles, solar cells and capacitors.    ADVANTAGE - The separator maintains high rate characteristics and can suppress short circuits. The lithium-ion secondary battery containing separator has excellent charging/discharging characteristics, low-temperature operation property and high-temperature durability, and is safe.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of separator; and    (2) lithium-ion secondary battery.
NOVELTY - A polyimide having dioxo-2,3-dihydro-1H-isoindole-containing structural unit (I), is new.    USE - New polyimide is used in varnish for forming molded component e.g. film (all claimed) used as transparent substrates and transparent protective film material for liquid crystal display, organic electroluminescent display, electronic paper and solar cell substrate.    ADVANTAGE - The polyimide has excellent film formability and solubility even when a low hygroscopic solvent is used as solvent, and produces molded component having excellent transparency and heat resistance. The polyimide film has high glass transition temperature, and reduced linear thermal expansion coefficient. The aggregation of polymer chain and electronic conjugation in the polyimide is suppressed.    DETAILED DESCRIPTION - A polyimide having dioxo-2,3-dihydro-1H-isoindole-containing structural unit of formula (I), is new.    R=H or 1-6C alkyl, in which at least one of R bonded to same benzene ring is alkyl.    INDEPENDENT CLAIMS are included for the following:    (1) varnish, which comprises the polyimide and an organic solvent;    (2) molded component, which comprises the polyimide; and    (3) synthesis of the polyimide.
NOVELTY - The method involves depositing a sacrificial layer structure (1) as a paste on a substrate (3). The paste of solid, glass and/or ceramic particles and a pasting agent with an organic binder, and an organic solvent, is applied on the substrate and then dried at 100-200 degrees C for 5-30 min. A functional layer (5) is deposited on the substrate. The substrate consisting of functional layer is partially covered by the sacrificial layer structure. The porous regions partially formed on the sacrificial layer structure, are removed from the substrate by injecting water and/or organic solvent.    USE - Method for producing patterned thin film for component or circuit board (claimed) such as electronic component and surface-mounted component of solar cell.    ADVANTAGE - The mechanical removal of the porosity of the sacrificial layer structure is facilitated. The costly disposal of the pollutants is avoided. Therefore, the patterned thin film is manufactured in a simple and cost-effective manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a component or circuit board.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional views illustrating the process of producing patterned thin film.    Sacrificial layer structure (1)    Substrate (3)    Functional layer (5)    Patterned thin film (6)
NOVELTY - The electronic device (10) has an electronic device main body (13) that is located between a base material (11) with flexibility and a sealing element (12) with flexibility. The electronic device main body is sealed in between the base material and the sealing element, through a sealing agent (14) that contains polyurea. The base material and the sealing element comprise a gas barrier layer. The gas barrier layer contains a metal oxide or a metal oxynitride.    USE - Electronic device, such as an organic electroluminescent element, an organic solar cell, an organic transistor, an inorganic electroluminescent element and an inorganic solar cell or a copper indium gallium selenide solar cell.    ADVANTAGE - The electronic device main body is sealed in between the base material and the sealing element, through the sealing agent, and thus ensures that the electronic device has an excellent tolerance corresponding to the bending, and hence ensures an excellent durability of the electronic device.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing an electronic device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an electronic device.    Electronic device (10)    Base material (11)    Sealing element (12)    Electronic device main body (13)    Sealing agent (14)
NOVELTY - A curable epoxy resin composition comprises nucleus-hydrogenated bisphenol A-type epoxy compound (A) and monoallyl diglycidyl isocyanurate compound (B) (I).    USE - Curable epoxy resin composition is used for forming hardened material and for sealing element of optical semiconductor device (all claimed). Uses include but are not limited to adhesive agent, laminated material, sealant, resist, coating material, transparent sheet, optical element, optical component, electronic paper, solar cell substrate, etc.    ADVANTAGE - The curable epoxy resin composition has excellent heat resistance property, light resistance property and thermal shock resistance property, and provides hardened material having excellent electricity supply characteristics and reflow tolerance at high temperature, and optical semiconductor device having excellent quality, storage stability at high-humid condition and durability.    DETAILED DESCRIPTION - A curable epoxy resin composition comprises nucleus-hydrogenated bisphenol A-type epoxy compound (A) and monoallyl diglycidyl isocyanurate compound (B) of formula (I).    R1,R2=H or 1-8C alkyl.    INDEPENDENT CLAIMS are included for the following:    (1) hardened material, which is obtained by hardening the curable epoxy resin composition; and    (2) optical semiconductor device, which contains optical semiconductor element sealed using hardened material of curable epoxy resin composition.
NOVELTY - Organic, electron-conducting layer comprises at least one dopant to increase n-type conductivity of an organic layer. The dopant includes salts of cyclopentadiene compounds (I).    USE - The organic, electron-conducting layer is useful in an organic electronic device such as an organic solar cell, an organic transistor, a light-emitting device, an organic component, an organic LED and an organic light-emitting electrochemical cell (all claimed).    ADVANTAGE - The organic, electron-conducting layer can be economically manufactured with high performance, improved charge carrier mobility and density, improves the electronic conductivity and electrical characteristics of the electronic device, and reduces the complexity and cost of the manufacture of electronic device.    DETAILED DESCRIPTION - Organic, electron-conducting layer comprises at least one dopant to increase n-type conductivity of an organic layer, where the dopant includes salts of cyclopentadiene compounds of formula (I).    R1-R5 = H, D, halo, -CN, -NO2, -OH, amine, ether, thioether, alkyl, cycloalkyl, acryl, vinyl, allyl, aryl, fused aryl or heteroaryl; and    M+ = alkali metals including Li, Na, K, Rb or Cs.    An INDEPENDENT CLAIM is included for producing an organic electron-conducting layer comprising performing a solvent or sublimation process using salt-like cyclopentadiene compounds.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a structure of an organic LED.    Glass layer (1)    Indium tin oxide layer (2)    Hole injector layer (3)    Hole-transporting layer, (6) Hole blocking layer. (4)
NOVELTY - The combustor (10) has a combustion passage (72) which allows waste gas inlet pipe (90) for combustion of waste gas and mixing gas. A mixing box (62) is arranged in gap between casings (50,60) for mixing air. An ignition system (80) is used to generate fire to mixing gas. A porosity cylindrical burner (70) has holes that are formed at outward appearance and connected to combustion passage. The waste gas inlet pipe is connected to chamber for supplying waste gas and fuel gas. A mixing gas inlet tube (32) is connected in chamber (22) to supply of mixing gas in which air is mixed.    USE - Combustor for processing waste gas ejected during manufacturing process of semiconductor such as LCD and solar cell. Uses include but are not limited to perfluorocompound gas, tetrafluoroethylene gas, tetrafluoroethylene gas, octafluoropropane gas, nitrogen trifluoride gas, sulfur hexafluoride gas.    ADVANTAGE - The inlet tubes are connected to chamber for supplying waste gas, fuel gas and mixing gas in which air is mixed respectively, so that the combustion efficiency is improved and the incomplete combustion of the waste gas and generation of the nitrogen oxide can be reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of combustor.    Combustor (10)    Chamber (22)    Mixing gas inlet tube (32)    Inner casings (50,60)    Mixing box (62)    Burner (70)    Combustion passage (72)    Ignition system (80)    Waste gas inlet pipe (90)
NOVELTY - The interconnection element has a bus bar bump (120) that is formed with a structure being protruded from one end of a bus bar main portion (110) sticking to electrode tap of secondary battery. The bus bar main portion is connected to a fuse for generating voltage. An oscillating component acid pattern (130) is formed in a communication area of bus bar bump and bus bar main portion.    USE - Electrode tap interconnection element for interconnecting electrode taps of electrochemical device (claimed) such as lithium secondary battery used in portable small electronic instrument such as cellular phone, notebook computer and camcorder and hybrid electric vehicle. Can also be used in super capacitor, ultra capacitor, fuel cell, sensors, electrolysis device and electrochemical reactor.    ADVANTAGE - The supersonic vibration occurring during ultrasonic welding of multiple bus bars of the battery can be prevented by forming oscillating component acid pattern in communication area of bus bar bump and bus bar main portion.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the structure of the interconnection element.    Bus bar main portion (110)    Curved side portions of bus bar main portion (111-113)    Bus bar bump (120)    Oscillating component acid pattern (130)
NOVELTY - The method involves forming the copper-indium-gallium thin film layer on the substrate. The selenium is deposited on the thin film layer. The substrate is heat-treated using the induction heating coil (14) under the selenium vapor atmosphere. Molybdenum is coated on the substrate made of sodalime glass, steel or ceramic.    USE - Method for manufacturing copper-indium-gallium-selenium (CIGS) photoreceptive layer for solar cell.    ADVANTAGE - The uniformity of the crystallization of the photoreceptive layer can be improved, since the temperature uniformity of the central portion and edge of the substrate is improved. The temperature of the substrate and process speed can be controlled according to the length of the induction heating coil.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the method for manufacturing CIGS photoreceptive layer.    Copper evaporator (11)    Gallium evaporator (12)    Indium evaporator (13)    Substrate roll (17)
NOVELTY - A polyamide resin comprises 95-99.95 %mass polyamide with a number average molecular weight of 2000 or more, and 0.05-5 %mass polyamide oligomer with a number average molecular weight of 500-2000. At least 25 mol% of the total monomer units comprising the polyamide and the polyamide oligomer are structural units derived from alicyclic monomer (I) or (II). The content of trans-isomer structural units derived from the alicyclic monomer in the polyamide resin is 50-85 mol%.    USE - Polyamide resin is used for polyamide resin composition for molded product (all claimed). Uses include but are not limited to surface mount technology connector, light-emitting diode reflector, solar cell substrate, radiator tank, resonator, off-shore-oil-field pipe, airbag base fabric, digital-data storage, shoe sole, insulation block for motor stator, etc.    ADVANTAGE - The polyamide resin has excellent heat resistance, rigidity at high temperature, chemical resistance and fluidity, and low water-absorbability. The polyamide resin exhibits crystallization even when molded into a mold at 80 degrees C.    DETAILED DESCRIPTION - A polyamide resin comprises 95-99.95 %mass polyamide with a number average molecular weight of 2000 or more, and 0.05-5 %mass polyamide oligomer with a number average molecular weight of 500-2000. At least 25 mol% of the total monomer units comprising the polyamide and the polyamide oligomer are structural units derived from alicyclic monomer of formula: X-Z-X (I) or X-R1-Z-R2-X (II). The content of trans-isomer structural units derived from the alicyclic monomer in the polyamide resin is 50-85 mol%.    X=carboxy or amino;    Z=3C or more alicyclyl;and    R1,R2=1C or more alkylene.    An INDEPENDENT CLAIM is included for polyamide resin composition, which comprises 0.1-10 parts mass compound (B) as a Lewis base with respect to 100 parts mass polyamide resin.
NOVELTY - The device has support stand (30) that supports the crucible (10). A groove is formed on the top profile of the stand (20) of the crucible. The stand is located between the crucible and support stand. A plate (40) is fixed between the crucible and stand.    USE - Device for growing sapphire crystal during fabrication of solar cell, LED, laser diode, silicon on sapphire (SOS), etc.    ADVANTAGE - The deep portion can be accurately conformed the center of the support stand and center of the crucible. The heating of the crucible can be completely controlled so as to uniformly manage the quality of the ingot. The locating time of crucible on the support stand can be shortened and the work efficiency of the sapphire crystal can be reduced with high productivity. The temperature for growing the crystal can be maintained.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the device for growing sapphire crystal.    Crucible (10)    Stand (20)    Support stand (30)    Plate (40)
NOVELTY - A metal material containing copper and gallium is melted (ST1), forged (ST2) by molten state, and solidified (ST3), to obtain copper-gallium-type alloy target.    USE - Manufacture of copper-gallium-type alloy target for sputter film deposition of light-absorption layer of thin-film solar cell.    ADVANTAGE - The copper-gallium-type alloy target having suppressed crack at the time of a process, and reduced amount of oxygen, is manufactured.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for copper-gallium-type-alloy target.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view explaining manufacture of copper-gallium-type alloy target. (Drawing includes non-English language text)    Melting of alloy material (ST1)    Forging (ST2)    Solidifying (ST3)
NOVELTY - A 1,7-bis (3,3',4,4'-dialkoxybenzene)-N,N'-di (alkyl) imide is new.    USE - New 1,7-bis (3,3',4,4'-dialkoxybenzene)-N,N'-di (alkyl) imide for organic light emitting diode, field effect transistors, and solar cells (all claimed).    ADVANTAGE - The method is simple, and has high yield.    DETAILED DESCRIPTION - A 1,7-bis (3,3',4,4'-dialkoxybenzene)-N,N'-di (alkyl) imide of formula (I) is new.    R, R1=alkyl.    An INDEPENDENT CLAIM is included for preparation of compound.    DESCRIPTION OF DRAWING(S) - The drawing shows a thermal gravimetric (TG) analysis graph of series of compounds PDI-Ph-OC10, PDI-Ph-OC14, and PDI-Ph-OC18.
NOVELTY - A vinylene diamide complex (I) is new.    USE - New vinylene diamide complex is used for film-forming material for solution used for forming oxide film (all claimed) for semiconductor element and optical element. Uses include but are not limited to touchscreen, solar cell, television, radio, computer, boats and ships, aircraft, lighting fixture, medical device, plasma-etching apparatus and optical cell.    ADVANTAGE - The vinylene diamide complex provides oxide film with excellent electrical property and optical property.    DETAILED DESCRIPTION - A vinylene diamide complex of formula (I) is new.    M=zirconium or hafnium;    R1,R4=3-12C alkyl;    R2,R3=H or 1-4C alkyl;    R5=1-12C alkyl or alkyl substituted by QR6;    Q=2-6C linear alkylene optionally substituted by 1-3C alkyl;and    R6=1-6C alkoxy or di(1-6C alkyl)amino.    INDEPENDENT CLAIMS are included for the following:    (1) manufacture of vinylene diamide complex;    (2) film-forming material, which is obtained by reacting vinylene diamide complex with oxidizing agent chosen from oxygen gas, air, ozone, water and hydrogen peroxide;    (3) film-forming material solution, which contains film-forming material and organic solvent; and    (4) manufacture of oxide film.
NOVELTY - Porphyrin derivatives (I) or (II) is new.    USE - Porphyrin derivatives is used for organic solar cell (claimed).    ADVANTAGE - The organic solar cell obtained using the porphyrin derivative has high efficiency, and improved energy conversion efficiency.    DETAILED DESCRIPTION - Porphyrin derivatives of formula (I) or (II) is new.    E1,E2=groups chosen from group of formulae (i)-(v);    X=S,O or N;    R1,R2=H, alkyl or alkoxy;    M=Si, Sn or Zn;    D'=H, or groups chosen from group of formulae (vi)-(x);    R3,R4=H, alkyl, alkoxy or phenyl;    A=phenylene, phenylacetylene or groups chosen from group of formulae (xi)-(xiii);    A1=phenyl or phenylacetyl;    A2=groups chosen from group of formulae (xiv)-(xvii);    A3=H or cyano;    A4,A5=cyano, COOEt or NO2;    A6=groups chosen from group of formulae (xviii)-(xxv), in which methylene group is replaced;    A7=CH3, CN or CF3;    B1,B2=arylene, alkynylene, alkenylene, -C=C- or -C?C-;    n=0 or 1;and    m=1.    An INDEPENDENT CLAIM is included for organic solar cell.
NOVELTY - Polyarylene polymer including substituted (triphenylvinyl)benzene recurring units (I) is new.    USE - Polyarylene polymer is useful in: polymer electrolyte membrane for fuel cell; ion exchange resin membrane; salt removal membrane for water treatment; heat resistant engineering plastics (all claimed); and secondary batteries.    ADVANTAGE - Polyarylene polymer possess long hydrophilic chain of sulfonic acid group; has high proton conductivity; and exhibits excellent dimensional stability, tensile strength, elongation properties, and mechanical, chemical and electrochemical properties. The introduction of the polymer electrolyte membrane into the fuel cell improves the fuel cell performance.    DETAILED DESCRIPTION - Polyarylene polymer including substituted (triphenylvinyl)benzene recurring units of formula (I) is new.    R1-R4 = 1-20C alkyl, 1-20C alkoxy, 6-18C aryl, 1-20C acyl (all optionally substituted), H, -SO3R, - P(=O)(OH)2, -F, -CN, -OH, -SH, -NO2, -CH2-Cl or - CH2N+(CH3)3O-H;    R = 1-20C alkyl, 1-20C alkoxy, 6-18C aryl, 1-20C acyl (all optionally substituted) or H;    k = 1-5; and    n = 1-990.    An INDEPENDENT CLAIM is also included for preparing polyarylene polymer.
NOVELTY - Graphene-based foam having a structure defined by a three-dimensional network of interconnected and ordered open cells is claimed. The open cells are defined by cell walls. The cell walls are formed of graphene sheets, partially reduced graphene oxide sheets, and/or reduced graphene oxide sheets, and has a thickness defined by the thickness of many graphene sheets, partially reduced graphene oxide sheets, and/or reduced graphene oxide sheets.    USE - The graphene-based foam is useful in an electrode, capacitor, fuel cell, battery, capacitive desalination device, thermal or acoustic insulator, chemical or mechanical sensor, actuator, adsorbent, catalyst support, filter, electronic component, a graphene-based film comprising or in the form of a permanently compressed graphene-based foam (claimed) and in biomedical applications, field emission, mechanical damping, and three dimensional flexible electronic devices.    ADVANTAGE - The graphene-based foam: has a density of 0.5-7 mg/cm3, and a compression set at 50% compression of less than or equal to 15% (claimed), thus exhibiting improved mechanical properties and minimizing the loss of unique properties attributed to the graphene-based material; has inherent electrical conductivity; and can be prepared without shrinkage or less shrinkage in a controlled manner.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a composition comprising the graphene-based foam; and    (2) preparing the graphene-based foam, comprising providing a dispersion of graphene sheets, partially reduced graphene oxide sheets, and/or reduced graphene oxide sheets in a freeze castable medium, and subjecting the dispersion to freeze casting.
NOVELTY - An anthracene derivative (I) is new.    USE - Anthracene derivative is used for organic electronic device e.g. organic light-emitting device, organic solar cell, organophotoreceptor drum and organic transistor (all claimed).    ADVANTAGE - The anthracene derivative is efficiently prepared with excellent durability, efficiency and driving voltage.    DETAILED DESCRIPTION - An anthracene derivative of formula (I) is new.    R1,R2=H, halo, nitrile, nitro, amino, 1-40C alkyl, 2-40C alkenyl, 1-40C alkoxy, 3-40C cycloalkyl, 2-40C heterocycloalkyl, 6-40C aryl or 5-40C heteroaryl (all optionally substituted by group A);    R3=groups chosen from group of formulae (i)-(ix);    X,Y'=CH or N;    R11-R24=H, halo, nitrile, nitro, amino, 1-40C alkyl, 2-40C alkenyl, 1-40C alkoxy, 3-40C cycloalkyl, 2-40C heterocycloalkyl, 6-40C aryl or 5-40C heteroaryl (all optionally substituted by group A);    R11+R12,R14+R15=condensed ring;    R23+R24=fused ring;    L1-L8=direct bond, 2-40C alkenylene optionally substituted by 1-40C alkyl, 2-40C alkenyl, 2-40C alkynyl, 1-40C alkoxy, 6-40C aryl or 5-40C heteroaryl, or 6-40C arylamine optionally substituted by 1-40C alkyl, 2-40C alkenyl, 1-40C alkoxy, 3-40C cycloalkyl, 2-40C heterocycloalkyl, 6-40C aryl or 5-40C aryl, or 6-40C aryl, 5-40C heteroaryl or 25-40C spiro (all optionally substituted by group A);    R4-R10=1-40C alkyl, 3-40C cycloalkyl, 6-40C aryl, or 5-40C heteroaryl (all optionally substituted by group A);and    group A=H, halo, nitrile, nitro, amino, 1-40C alkyl, 2-40C alkenyl, 1-40C alkoxy, 3-40C cycloalkyl, 2-40C heterocycloalkyl, 6-40C aryl or 5-40C heteroaryl.    An INDEPENDENT CLAIM is included for organic electronic device.
NOVELTY - Tungsten wire rope winding machine comprises machine frame (9) for placing one end of the yarn drum rack (13), a mechanical forming mechanism is rack set with a strand of twisted mechanism (11), a mechanism side (3), a traction mechanism (8) and wire rewinding automatic winding displacement mechanism (5).    USE - As tungsten wire rope winding machine (claimed), used in solar cell.    ADVANTAGE - The tungsten wire rope winding machine fully meet single crystal furnace operating temperature of 1500 degrees C, tungsten wire from heat variant requirements into life than ten times the growth of rope.    DESCRIPTION OF DRAWING(S) - The figure shows schematic view of tungsten wire rope winding machine.    Protection window (1)    Mechanism side (3)    Self-lock tightening handle (4)    Displacement mechanism (5)    Traction mechanism (8)    Machine frame (9)    Strand of twisted mechanism (11)    Yarn drum rack (13)
NOVELTY - The method involves heating an absorber material source (820) within reactor chamber (810). An initial film growth of cadmium telluride source material (826) from the absorber material source is deposited onto cadmium sulfide layer (846) of substrate (840), after preheating the substrate to a preset temperature. The substrate temperature during the deposition of the cadmium telluride layer (850) is controlled to be at a lower temperature than later deposition of cadmium telluride layer. The substrate is primarily heated by radiant heat from the absorber material source.    USE - Method for forming film for use as absorber in solar cell or photovoltaic module containing photovoltaic device (claimed). Can also be used in detector, electronic device, telecommunication device, charge-coupled imaging device, computer, and biological or medical device.    ADVANTAGE - The reliability of solar cell can be improved and the stability of the solar cell can be maintained for a long period of time. The material cost and manufacturing cost of the solar cell can be reduced. The solar cells can be fabricated with cadmium telluride thin film or absorber with enhanced reliability. The cadmium telluride growth rate can be varied during deposition of the thin film, so as to provide a gradation from a smaller grain region to a larger grain region within the cadmium telluride thin film. The lifetime of the solar cell can be improved. The solar cell can resist degradation during stress testing.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thin-film photovoltaic (PV) device.    DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the assembly for use in depositing cadmium telluride layer or thin film in solar cell.    Reactor chamber (810)    Absorber material source (820)    Cadmium telluride source material (826)    Substrate (840)    Cadmium sulfide layer (846)    Cadmium telluride layer (850)
NOVELTY - Polyethylene glycol containing compounds are new.    USE - In metal plating composition in any industry where metal plating is done. The metal plating compositions are used in the manufacture of electrical devices such as printed wiring boards, through-holes, vias, integrated circuits, electrical contact surfaces and connectors, electrolytic foil, silicon wafers for microchip applications, semiconductors and semiconductor packaging, solar cell, lead frames, optoelectronic devices and packaging and solder bumps. The metal plating compositions also are used for metal plating decorative articles such as jewelry, furniture fittings, automobile parts and sanitary appliances. The composition is also used to plate metal or metal alloy on a substrate.    ADVANTAGE - The metal plating composition comprising the compound exhibit good leveling performance and throwing power. The compound improves metal plating performance of the composition and provides composition with acceptable leveling performance.    DETAILED DESCRIPTION - Compounds of formula H-A'p-Q'-(C(O)-CH2O-((R1CH)t-O)z-CH2-C(O)-NH-A)u-H (I) are new.    A'=-(NH-(CH2)x')y'-; -NH(CH2)x'-(O-(CHR1)w'-O-(CH2)x'; or -NH-((R1CH)r'-O-)w'-C2H4-;    A=-((CH2)x-NH)y-; -(CH2)x-(O-(CHR1)r)w-O-(CH2)x-NH-; or -((R1CH)r-O)w-C2H4-NH-;    R1=-H or -CH3;    Q'=-NH- or -O-;    p=0 or 1;    r'=2 to 4;    w'=1 to 50;    x'=2 to 6;    y'=0 to 5;    r=2 to 4;    w=1 to 50;    x=2 to 6;    y=0 to 5;    t=2 to 4;    u=1 to 20;    w=1 to 50;    z=1 to 50.    Provided that Q' is -NH- when p is 1 or is -O- when p is 0 and the H- and Q' form a chemical bond when p is 0; H- and Q' form a chemical bond when y' is 0, H is bonded to the nitrogen of terminal -C(O)-NH- when y is 0.
NOVELTY - A conductive silver paste comprises silver and vanadium-phosphorus-oxide comprising 80-94 wt.% vanadium pentoxide and 6-20 wt.% phosphorus pentoxide, with respect to total weight of vanadium-phosphorus-oxide, dispersed in an organic vehicle.    USE - Conductive silver paste is used for metal-wrap-through silicon solar cell with n-type or p-type silicon base (claimed).    ADVANTAGE - The conductive silver paste having excellent hole filling property, enables the manufacture of metal-wrap-through silicon solar cell with improved performance.
NOVELTY - The method involves mixing copper zinc tin sulphide or selenide solution with thiol solvent to obtain black ink solution. Spin coating process is performed in a soda-lime glass substrate. A prefabricated film is obtained. Drying process is performed in the prefabricated film in a non-blast drying box at temperature of 130-230 degrees Celsius. Thickness of the prefabricated flim is 50-300 nm. Sulphide or selenide annealing treatment is performed for 30-60 min to form a copper zinc tin sulphide or selenide solar cell absorption layer thin film.    USE - Method for manufacturing a thiol-based ink-coated copper zinc tin sulphide or selenide solar cell absorption layer thin film.    ADVANTAGE - The method enables saving raw material resources, reducing volatile solvent and low carbon organic matter solvent requirement and ensuring better controllability during zinc-tin-sulfur nanometer crystal ink synthesis process by utilizing an oxygen element. The method enables improving photo-electric performance of the absorption layer thin film, realizing better repeatability and manufacturing the absorption layer thin film in a simple manner.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view illustrating a thiol-based ink-coated copper zinc tin sulphide or selenide solar cell absorption layer thin film manufacturing method.'(Drawing includes non-English language text)'
NOVELTY - Saturation method of graphite boat involves adding 21 graphite boats into a furnace tube, vacuumizing for 3600 seconds, introducing ammonia gas, maintaining the furnace tube at 425 degrees C for 240 seconds under pressure of 1700 mTorr and discharging power of 7200 w, introducing nitrogen with flow rate of 7500 sccm under pressure of 35 mTorr for 20 seconds, introducing silane with flow rate of 800-900 sccm until the pressure is stabilized to 1600-1800 mTorr for 9000-10000 seconds, stopping ventilating, vacuumizing to pressure of 35 mTorr, and discharging.    USE - Saturation method of graphite boat used for solar cell.    ADVANTAGE - The graphite boat is saturated with reduced color defects.    DETAILED DESCRIPTION - Saturation method of graphite boat involves adding 21 graphite boats into a furnace tube, vacuumizing for 3600 seconds, introducing ammonia gas, maintaining the furnace tube at 425 degrees C for 240 seconds under pressure of 1700 mTorr and discharging power of 7200 w, then introducing nitrogen with flow rate of 7500 sccm under pressure of 35 mTorr for 20 seconds, further introducing ammonia gas with flow rate of 7500 sccm under pressure of 35 mTorr such that the pressure in the furnace tube is 1600-1800 mTorr and the temperature is controlled at 420-430 degrees C for 120 seconds, then introducing silane with flow rate of 800-900 sccm until the pressure is stabilized to 1600-1800 mTorr for 9000-10000 seconds, stopping ventilating, vacuumizing to pressure of 35 mTorr, then introducing nitrogen gas with flow rate of 6000 sccm for 20 seconds, vacuumizing, repeating the process twice to restore normal pressure, and discharging.
NOVELTY - The preparation method involves selecting a heterogeneous substrate (3) preferably from an insulating material, a ceramic, glass or quartz. Magnetic control sputtering device is used to sputter polycrystalline silicon (1) and graphite (2), in which sputtering power is adjusted to target value. The temperature is naturally cooled to room temperature after the sputtering is performed, to obtain the polycrystalline silicon thin film doped with carbon element.    USE - Preparation method for high conductive polycrystalline silicon thin film used for solar cell.    ADVANTAGE - Conductivity of the polycrystalline silicon thin film is improved. Provides simple operation and convenient control such as temperature of the substrate, sputtering power, gas flow rate and sputtering air pressure, thus enabling to control the carbon content and control the conductivity of the polycrystalline silicon thin film.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of a magnetic control sputtering of polycrystalline silicon and graphite.    Polycrystalline silicon target (1)    Graphite target (2)    Heterogeneous substrate (3)
NOVELTY - The utility model claims one solar cell back sheet, comprising a base layer, in particular, further comprising a weather-proof outer coating of the base layer are respectively formed on the upper and lower surface of the upper resistance layer and coating. The solar battery back board weatherable coating is directly formed on the surface of the base material surfaces of weather-proof outer coating (surface in contact with the air) is used for protecting basal material and with the silicon glue adhesion protective junction box, weather-proof inner coating and protecting basal material and packaging adhesive layer (EVA encapsulating film or other packaging film); The utility model has good weather resistance, high reflection rate, easy assembly and repairing, good heat conducting efficiency, flame retardant property, at the same time it has low cost and high cost performance and easy;
NOVELTY - The utility model claims one back cooling, back through the liquid cooling type photo-electric member generating efficiency, wherein it comprises a frame, a low iron glass, a bonding layer, a solar cell string interconnects, a bonding layer, a toughened glass, silicone structural glue, a locating adhesive tape, a back plate, a glue type water outlet, a toughened glass, glue type water inlet, the low-iron toughened glass layer, the adhering layer, the interconnection with the solar cell string, a bonding layer, a toughened glass in turn, after cooling the laminated surface planeness detector for tempered glass adhered locating strip, upper covering belt hole of the toughened glass, the back of the silicone structure glue seal outside the locating adhesive tape, silicone structural glue curing, assembled frame, a back plate, a glue type water outlet, glue type water inlet. Assembling is simple, it can realize modularization component, improves the indoor environment, improves the solar power generation efficiency, and effectively recovering heat, saves space, realizes photovoltaic building integrated, which is suitable for new energy utilization field.
NOVELTY - The furnace has a furnace main portion (2) that is provided with a quartz boat (3). A discharge pipe (5) is connected with an upper exhaust fan (6). The movable bracket (72), first driving device (73), rotating rod, push-pull rod (75) and second driving device (76) are located in the furnace main portion. The push-pull rod is provided at the front end of the rotating shaft. The push-pull rod pushes the rotating rod to rotate so as to drive the furnace door.    USE - Solar cell silicon wafer diffusion furnace used for solar cell silicon wafer processing device.    ADVANTAGE - Since the second drive device of load is small, the damage of the drive device can be prevented and the frequently change of the drive device can be avoided. The production cost of the solar cell silicon wafer diffusion furnace is reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of solar cell silicon wafer diffusion furnace.    Furnace main portion (2)    Quartz boat (3)    Discharge pipe (5)    Upper exhaust fan (6)    Movable bracket (72)    First driving device (73)    Push-pull rod (75)    Second driving device (76)
NOVELTY - The etching process and diffusion process are performed for an upper surface of a P-type silicon sheet. The etching process and diffusion process are performed for a back surface of the silicon sheet. A passivation layer is formed on the back surface of the silicon sheet. An anti-reflection layer is formed on the upper surface of silicon sheet. A hole is formed in the anti-reflection layer and the passivation layer by projecting laser beam on the anti-reflection layer and the passivation layer.    USE - Back surface passivation method for solar battery.    ADVANTAGE - The solar battery has high photoelectric conversion efficiency by reducing the reflectivity of light. The back surface passivation of solar battery is performed at low cost.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the process performed for the passivation of back surface of the solar battery.(Drawing includes non-English language text)
NOVELTY - The slurry has silver powder, glass powder, organic binding agent, indium and zinc compound, dispersing agent, where weight percent of the silver powder, glass powder, organic binding agent, indium and zinc compound, and dispersing agent is 75 to 90%, 1 to 8%, 1.5 to 4%c, 0.1 to 10%, and 0 to 1%, respectively and the glass powder is lanthanum, boron and zinc glass. The indium and zinc compound is made of zinc stearate. The dispersant agent is a ferric stearate, where average grain diameter of the glass powder is 3u microns.    USE - Solar cell positive silver slurry.    ADVANTAGE - The slurry has compound of indium and zinc so as to increase the bonding strength between the electrode and silicon substrate, and reduces the series resistance and sheet resistance, and provides zinc component with the organic binder so as to reduce the indium and zinc surface tension and improve the electrode performance.
NOVELTY - The method involves preparing (S110) the substrate to form DCS oxide in the upper portion so as to cover the same pattern and Disilane (DS) oxide. The DS oxide is formed in the side of pattern which is formed at the surface of substrate. The DCS oxide is etched (S120,S130) to the primary and secondary-order product using media having first and second DCS/DS etching selectivity. The media is provided with hydrogen fluoride/ammonia and second DCS/DS etching selectivity is provided with hydrogen fluoride/isopropyl alcohol (HF/IPA).    USE - Film etching method for use during manufacture of semiconductor device, display device and thin film solar cell.    ADVANTAGE - The difference of etching selectivity of DCS/DS can be raveled. The generation of etch residue in the DCS/DS high selectivity etching can be resolved so that the pattern is tightly formed and loading effect can be improved according to the pattern size. The damage to the upper portion of the poly-silicon pattern which is partially etched can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the film etching process. (Drawing includes non-English language text)    Step for preparing substrate (S110)    Step for etching DCS oxide (S120,S130)
NOVELTY - Operating a fuel cell system (10), comprises: providing a catalyst consisting essentially of platinum and ruthenium as catalytically active materials; providing a catalytic reactor having surfaces having the catalyst disposed on it and configured to expose the catalyst to at least a hydrocarbon fuel and steam; reforming a high-sulfur content hydrocarbon fuel with at least steam for a first period of time; reforming the low-sulfur-content hydrocarbon fuel with at least steam for a second period of time; and providing reformed hydrocarbon fuel to a fuel cell stack (12).    USE - The method is useful for operating a fuel cell system.    DETAILED DESCRIPTION - Operating a fuel cell system (10), comprises: providing a catalyst consisting essentially of platinum and ruthenium as catalytically active materials, where the platinum content is selected based on a desired level of sulfur resistance, and the catalyst is configured for self cleaning of sulfur compounds when performing steam reforming using a low-sulfur-content hydrocarbon fuel; providing a catalytic reactor having surfaces having the catalyst disposed on it and configured to expose the catalyst to at least a hydrocarbon fuel and steam; reforming a high-sulfur content hydrocarbon fuel with at least steam for a first period of time; reforming the low-sulfur-content hydrocarbon fuel with at least steam for a second period of time; and providing reformed hydrocarbon fuel to a fuel cell stack (12).    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a fuel cell system.    Fuel cell system (10)    Fuel cell stack (12)    Reformer (14)    Desulfurization system (16)    Power lines (20)
NOVELTY - A metal paste composition comprises metal, aliphatic polycarbonate, organic solvent and alkali.    USE - Metal paste composition is used for wiring board on insulated substrate and wiring pattern after baking, material for forming conductive layer of solar cell element.    ADVANTAGE - The metal paste composition has excellent metal dispersibility and can be handled easily. The composition provides sintered components having low volume resistivity.
NOVELTY - Use of a double salt of calcium nitrate and potassium nitrate for manufacturing a nitrate-based heat transfer fluid or a nitrate-based thermal energy storage fluid, is claimed.    USE - The double salt of calcium nitrate and potassium nitrate is useful for manufacturing a nitrate-based melt, which is useful as a nitrate-based heat transfer fluid or a nitrate-based thermal energy storage fluid in solar energy applications (all claimed) including solar electrical power plant systems.    ADVANTAGE - The double salt: is ammonium-free; provides the melt (M1), which has a melting temperature of 131 degrees C, and a decomposition temperature of at least 510 degrees C, preferably at least 550 degrees C (all claimed), hence it exhibits both low melting temperature and high decomposition temperature, and is easy to make and to handle; and provides the heat transfer fluid or nitrate-based thermal energy storage fluid, which is chloride-free and less corrosive, increases the lifetime of system, exhibits low water absorption and caking tendency, and can be produced by a method, which avoids removal of the water from the aqueous solution, and requires less energy.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) manufacturing a nitrate-based melt (M1), comprising mixing the double salt with sodium nitrate and potassium nitrate, followed by controlled heating and melting of the resulting mixture; and    (2) a melt (M1) obtained by the method.
NOVELTY - The device has a stacking including a reception face (2) that is intended to receive a solar flow. A thermoelectric generator (4) is arranged with a thermoelectric module that is placed between a hot face (6) and a cold face (8). The hot face is located on a side of the reception face. A heat source (14) is interposed partly between the reception face and the hot face of the thermoelectric generator. A control unit is arranged for the heat source. A set of channels extends parallel to the hot face and to the reception face.    USE - Hybrid solar device for generation of electricity.    ADVANTAGE - The heat source is interposed partly between the reception face and the hot face of the thermoelectric generator, and the control unit is arranged for the heat source, thus allowing the solar device to have increased lifetime, while ensuring an approximately constant electricity production twenty-four hours a day even when subjected to variations due to passing of clouds or even during alternating days and nights. The thermal resistance of the device is reduced, thus ensuring mechanical integrity of the device.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a solar system.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic side view of a solar device.    Reception face (2)    Thermoelectric generator (4)    Hot face (6)    Cold face (8)    Heat source (14)
NOVELTY - The flexible substrate comprises a silica membrane (2) coated on both surfaces of a flexible film (1) that consists of transparent resin. The flexible film is an acrylic resin, a polyamide, a polyethylene terephthalate or a polyethylene naphthalate.    USE - Flexible substrate for use as a base of an organic electronics circuit, such as an organic transistor, an organic solar cell and organic electroluminescence.    ADVANTAGE - The flexible substrate comprises a silica membrane coated on both surfaces of a flexible film that consists of transparent resin, and thus reduces cost of the flexible terminal of the organic electronics, suitable as the substrate for forming the flexible organic electronics circuit with respect to the organic solvent.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of a flexible substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a flexible substrate.    Flexible film (1)    Silica membrane (2)
NOVELTY - A photocurable nanoimprint composition comprises (meth)acryl group-containing organosilicon compound (A) (I), metal alkoxide (B), polymerizable monomer (C) which has a (meth)acryl group, and photoinitiator (D).    USE - Composition is used for forming pattern used for surface-treatment sapphire substrate used in replica metal mold for photocurable nanoimprint (all claimed). Uses include but are not limited to light-emitting diode board, secondary battery, solar cell, fuel cell, semiconductor integrated circuit and used in biotechnology.    ADVANTAGE - The photocurable nanoimprint composition has high storage stability for long period of time, adhesiveness with base material and pattern transferability.    DETAILED DESCRIPTION - A photocurable nanoimprint composition comprises (meth)acryl group-containing organosilicon compound (A) of formula (I), metal alkoxide (B), polymerizable monomer (C) which has a (meth)acryl group, and photoinitiator (D).    R1=H or methyl;    R2=1-20C alkylene or 3-10C cycloalkylene;    R3=1-4C alkyl, 3-4C cycloalkyl, or 6-12C aryl;    R4=1-4C alkyl or 3-4C cycloalkyl;    l=1-3;    m=0-2;    k=1-3;    l+m+k=4;    M=tungsten, tin, indium, antimony, molybdenum, niobium, zirconium, or hafnium;and    R5=1-10C alkyl.    (i) When M is tungsten, p is 6 or 5; (ii) When M is molybdenum and niobium, p is 5; (iii) When M is tin, hafnium, or zirconium, p is 4; and (iv) When M is indium or antimony, p is 3. INDEPENDENT CLAIMS are included for the following:    (1) formation method of pattern;    (2) manufacturing method of surface-treatment sapphire substrate; and    (3) replica metal mold for nanoimprint, which has hardening component of the composition.
NOVELTY - The method involves depositing dopant source in some areas on a surface of a semiconductor substrate in one coating phase. The dopant is diffused into the substrate in a drive-in phase. The dopant source is deposited again in some areas on the substrate in another coating phase, while the dopant is diffused into the semiconductor substrate. The diffusion depth of the dopant through the gas flow of dopant in one coating phase and gas flow of dopant in other coating phase is set independent of dopant concentration in the region near the surface of the semiconductor substrate.    USE - Method for doping semiconductor substrate (claimed) used for solar cell such as p-type solar cell, n-type front surface filed (FSF) solar cell and n-type back surface field (BSF) solar cell.    ADVANTAGE - The process time can be significantly reduced because the entire time of the one coating phase is shifted in the drive-in phase. The dopant concentration in the near-surface region of the semiconductor substrate is reduced, while the dopant in the semiconductor substrate can be driven more deeply into the semiconductor substrate. The dopant concentration can be varied in regions near the surface, without changing the diffusion depth of the impurity. The concentration of the dopant deposited on the semiconductor substrate can be adjusted.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for doped semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating the setting of dopant concentration near the surface during the coating phase.
NOVELTY - Solder joint of an electrically conductive solder material comprising at least one substrate, is claimed. The solder material comprises metal and at least one glass material, preferably glass and/or glass-ceramic comprising 68-80 wt.% lead(II) oxide, 10-15 wt.% silicon dioxide, 0-4 wt.% boron trioxide, 0-10 wt.% aluminum oxide, 1-6 wt.% lithium oxide, 1-10 wt.% phosphorus pentoxide and 0-4 wt.% zirconium dioxide. The total weight of lithium oxide and phosphorus pentoxide is 2-15 wt.%. The weights are based on oxide.    USE - The solder joint is useful in an electrical- and/or electronic component, preferably silicon-based solar cell or flat screen. The solder paste is useful for front- and/or rear side contacting of silicon-based solar cells or for producing, preferably sealing flat screens (all claimed).    ADVANTAGE - The solder joint exhibits controllable processing temperature and is durable.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a solder paste comprising the above solder material.
NOVELTY - Manufacturing a solar cell, comprises providing a semiconductor element for converting light of a predetermined first wavelength region into electrical energy, and providing at least one coating for converting light of at least one second wavelength region in the light of the first wavelength region, where the coating is produced by aerosol deposition of at least one inorganic phosphor.    USE - The method is useful for manufacturing a solar cell (claimed).    ADVANTAGE - The method is capable of economically manufacturing the solar cell with high stability, density and resistance against environmental influences.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a solar cell, comprising a semiconductor element for converting light of a first predetermined wavelength region into an electrical energy, which is provided with the coating for converting light of the second wavelength region in the light of the first wavelength region.
NOVELTY - Processing a polysilicon solar battery comprises etching polycrystalline silicon of the solar battery with polysilicon acid, washing the etched polycrystalline silicon, and basic texturing the washed polycrystalline silicon and then cleaning.    USE - The method is useful for processing a polysilicon solar battery (claimed).    ADVANTAGE - The method is capable of improving efficiency and service life of the polysilicon solar battery.
NOVELTY - The apparatus has a production chamber (102), which carries out evaporation vaporization of the solid and produces gas. The production chamber makes a reactive gas (104) and a solid raw material (101) transduced. An opening-closing mechanism (107) opens and closes the exit flow path of the generated gas from the production chamber. A heater (103) heats separately the production chamber and opening-closing mechanism, and has a mechanism in which carrier gas for providing an evacuation tube is heated.    USE - Gas supply apparatus for crystal growth manufacturing apparatus used for solar cell and FPD apparatus.    ADVANTAGE - Generated gas is utilized stably, since material which does not react with a reactive gas is provided. Prevents generated reactive gas adsorbing and carrying out the film growth in the contact surface for opening and closing. Contact surface is maintained at purity, and raw material is vaporized directly. Low cost and speeding-up of growth rate are achieved.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of a gas supply apparatus.    Solid raw material (101)    Production chamber (102)    Heater (103)    Reactive gas (104)    Opening-closing mechanism (107)
NOVELTY - Producing (M1) an encapsulated coating comprises: applying a hardening material to a surface of a porous coating, where the porous coating comprises an open pore structure and many bilayers disposed on a substrate, and the hardening material permeates into at least a portion of the open pore structure of the porous coating; and applying hardening conditions to harden the hardening material and form the encapsulated coating comprising hardened hardening material disposed on the surface of the porous coating and within at least a portion of the open pore structure of the porous coating.    USE - The method is useful for producing an encapsulated coating (claimed) that is used in optical applications comprising dichroic mirrors, high performance pigment or solid state color filters, semiconductor devices, capacitor, dielectric resonator, optical elements of digital cameras, protective film for solar cells, pictures and displays, ophthalmic and cosmetic and drug delivery applications.    ADVANTAGE - The method provides coating: that is more durable compared with the porous coating lacking the hardened hardening material (claimed); and exhibiting UV protection capabilities.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) a coating material comprising particles of a first material dispersed in a carrier, where the particles comprise many bilayers and are porous;    (2) forming (M2) the coating material comprising: depositing the bilayers on a substrate to form a porous coating; drying the porous coating for a predetermined period of time; delaminating the porous coating from the substrate to form particles; and dispersing the particles in the carrier; and    (3) an article comprising a first substrate, a porous coating comprising many bilayers and an open pore structure, where at least a portion of the bilayers comprise nanoparticles and a polyelectrolyte, and a laminating material.
NOVELTY - The apparatus has concatenated bath furnace portion (510) which is arranged in low height than secondary connection bath furnace portion (520). A channel section (321) is arranged at the upper portion of silicon melting portion (320). A silicone molten metal is formed in first silicon melting portion (310). The connection bath furnace portion (510) is provided with side portions which are extended to the vertical direction in both ends of backside covered with the silicone molten metal.    USE - Apparatus for refining silicon used for manufacturing poly silicon ingot for solar cell.    ADVANTAGE - The electronic beam directly irradiated in the connection bath furnace portion can be prevented, and the silicon refining effect can be improved. The production efficiency can be improved. The silicone molten metal polluted by the impurity can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional views of the apparatus for refining silicon.    Electron gun (210)    Silicon melting portions (310,320)    Channel section (321)    One-way direction solidification portion (400)    Concatenated bath furnace portions (510,520)
NOVELTY - The nitrogen gas generating system comprises a storage tank installed in a vessel for storing the fuel; a fuel cell device for producing electricity; a nitrogen extractor for extracting the nitrogen gas from the exhaust gas ejected in the fuel cell device; and a nitrogen supplying apparatus for supplying the nitrogen gas extracted from the nitrogen extractor. The nitrogen extractor includes a deoxygenator that removes oxygen from the exhaust gas. A moist defoger removes moisture from the exhaust gas. A condenser cools the exhaust gas.    USE - The nitrogen gas generating system is useful in a vessel (claimed).    ADVANTAGE - The system generates the nitrogen gas in an environment-friendly manner without the requiring a separate apparatus. The nitrogen gas can be supplied to the liquid cargo storage tank without the requiring a separate nitrogen gas generator.    DETAILED DESCRIPTION - The nitrogen gas generating system comprises a storage tank installed in a vessel for storing the fuel; a fuel cell device for producing electricity; a nitrogen extractor for extracting the nitrogen gas from the exhaust gas ejected in the fuel cell device; and a nitrogen supplying apparatus for supplying the nitrogen gas extracted from the nitrogen extractor. The nitrogen extractor includes a deoxygenator that removes oxygen from the exhaust gas. A moist defoger removes moisture from the exhaust gas. A condenser cools the exhaust gas. A nitrogen storage part stores the nitrogen gas. A blower injects the nitrogen gas stored in the nitrogen storage part to the storage tank. The storage tank further includes: a branch line in which the nitrogen supplying apparatus is branched from the nitrogen storage part to multiple storage tanks; and a valve that is installed in the branch line.
NOVELTY - A glass substrate has anti-reflective layer formed with predetermined depth from the surface of glass. The transmittance of glass substrate is 95-97%. The anti-reflective layer has pore size of less than 1 nm.    USE - Glass substrate is used for cover glass of solar cell, and display device.    ADVANTAGE - The glass substrate has excellent antifouling characteristics.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of glass substrate, which involves preparing etching solution including hexafluorosilicic acid, silicon dioxide, hydroxide or fluoride compound and polyvalent metal ions, and etching the surface of glass substrate.
NOVELTY - A solar cell is obtained using solid solution of perovskite structure-containing organic-metal halide and photoabsorbent.    USE - Solar cell (claimed).    DETAILED DESCRIPTION - A solar cell is obtained using solid solution of perovskite structure-containing organic-metal halide (A"M"(X1(1-m)X2(m))3) and photoabsorbent.    M"=organic ammonium ion or Cs+;    X1=I-;    X2=Br-;and    m=0.1-1.
NOVELTY - A carbon loading non-noble metal oxygen reduction composite catalyst comprises carbon carrier, pyrrole monomer, and 0.01-15 mass% oxidant containing 1-40 wt.% non-noble metal salt, where the mass ratio of carbon carrier and pyrrole monomer is 0.01:0.99 to 0.99:0.01.    USE - Carbon loading non-noble metal oxygen reduction composite catalyst for use in an alkaline fuel battery field.    ADVANTAGE - The catalyst is prepared in a simple, easy and economical manner, and is suitable for industrial production.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a carbon loading non-noble metal oxygen reduction composite catalyst, which involves mixing the carbon carrier and pyrrole monomer, uniformly dispersing the mixture in the solvent, adding the dispersed mixture into an oxidizing agent, fully grinding till the solvent is volatilized completely, placing the mixture in a vacuum oven, drying, adding non-noble metal salt and solvent, fully grinding till the solvent is volatilized, putting the mixture into the vacuum oven to dry to obtain the compound precursor, setting the precursor compound in a quartz boat and roasting under the protection of inert atmosphere to obtain the composite catalyst.
NOVELTY - A naphtho-bis-thiadiazole derivative (I), is new.    USE - New naphtho-bis-thiadiazole derivative is used as fluorescent paint, intermediate material, and organic electronic material e.g. organic electroluminescent light-emitting layer material of organic electroluminescent element used for electronic device e.g. solar cell.    ADVANTAGE - The naphtho-bis-thiadiazole derivative has excellent light absorptivity and fluorescence emissivity, and donor-acceptor-type structure containing electron donating groups and electron withdrawing groups.    DETAILED DESCRIPTION - A naphtho-bis-thiadiazole derivative of formula (I), is new.    NY,NY'=tertiary amino group;and    N=nitrogen atom, which is bonded directly to 4th position or 9th position of naphtho(1,2-c:5,6-c')bis(1,2,5)thiadiazole.    An INDEPENDENT CLAIM is included for manufacture of naphtho-bis-thiadiazole derivative (I).
NOVELTY - A benzo fluorenyl amine compound (I), is new.    USE - New benzo fluorenyl amine compound is used for hole-transport material/hole-injection material for organic electroluminescent element (all claimed). Uses include but are not limited to photoelectric conversion element, solar cell, image sensor, flat light display, electrophotographic photoreceptor and luminescent material.    ADVANTAGE - The organic electroluminescent element using new benzo fluorenyl amine compound has excellent luminance, current efficiency, power efficiency, and high efficiency and reduced power consumption and drive voltage.    DETAILED DESCRIPTION - A benzo fluorenyl amine compound of formula (I), is new.    R1,R2=biphenylyl, terphenyl or benzo(a)fluorenyl optionally having methyl;and    R3,R4=H or methyl.    INDEPENDENT CLAIMS are included for the following:    (1) hole-transport material/hole-injection material, which comprises the benzo fluorenyl amine compound (I); and    (2) organic electroluminescent element, which comprises benzo fluorenyl amine compound (I) in light emitting layer, positive hole-transport layer or positive hole-injection layer.
NOVELTY - A fullerene derivative (I) is new.    USE - New fullerene derivative used for electron acceptor, and N-type semiconductor material for organic thin-film solar cell (all claimed). Uses include but are not limited to synthesis of multi-adduct fullerene derivative, electroluminescent element, photoelectric conversion elements, light sensor and organic thin-film transistor.    ADVANTAGE - The fullerene derivative which does not contain an addition position isomer, with excellent electron-accepting property and favorable solubility with respect to organic solvent, is manufactured by a simple process. The addition position of an organic group in the fullerene derivative is controllable.    DETAILED DESCRIPTION - A fullerene derivative of formula: C60(OR)8 (I), is new.    R=methyl or ethyl.    INDEPENDENT CLAIMS are included for the following:    (1) manufacture of fullerene derivative;    (2) brominated fullerene;    (3) N-type semiconductor material, which consists of fullerene derivative; and    (4) organic thin-film solar cell, which consists of photoelectric conversion layer containing N-type semiconductor layer.
NOVELTY - A laminated sheet comprises P1 layer containing thermoplastic resin with glass transition temperature (Tg) of greater than or equal to 10 degrees C as main structural component and P3 layer containing thermoplastic resin with Tg of less than or equal to 10 degrees C as main structural component. P1 layer contains 3-40 mass% inorganic particle with respect to total amount of P1 layer. Average particle diameter of inorganic particle is greater than or equal to 2.5 mu m. Ratio (T1/Ta) of total thickness (T1) of P1 layer with respect to total thickness (Ta) of laminated sheet is greater than or equal to 25%.    USE - A laminated sheet for electrical insulation materials, such as solar cell backsheet, distribution cable, adhesive tape, and transport hose, motor vehicle material, and building material.    ADVANTAGE - Excellent adhesion between interlayers of laminated sheet can be retained, and laminated sheet can be exposed to outdoors over a long period of time.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of laminated sheet which involves supplying raw material made of thermoplastic resin for P1 layer and raw material made of thermoplastic resin for P3 layer to separate extruders, melting, merging P1 layer and P3 layer, laminating, and extruding to sheet form by T-die.
NOVELTY - The gas-barrier film has a gas barrier layer (2), which has zinc and silicon compounds in the side of polymer film base material (1). The value calculates content ratio of zinc and silicon atom by 15 nanometer interval in depth direction by x-ray photoelectron spectroscopy. The points satisfy formula of 0.8 greater than or equal to ai-a(i+1) not less than 0, in which i represents 0 or more and n-1 or less integer, when set as a0,a1,a2, a3 and an, in which a0 is value in measuring point at side of gas barrier layer outermost surface and an is value in measuring point of the side close to interface with polymer film base material.    USE - Gas-barrier film e.g., transparent gas-barrier film used for packaging materials. Uses include but are not limited to foodstuff, pharmaceutical, flat-panel TV, organic electroluminescent display, large-sized LCD, high-definition display, electronic paper and solar cell.    ADVANTAGE - Gas-barrier film excellent in flexibility is obtained, since gas-barrier film has high gas-barrier property with respect to water vapor and is maintained also after repeating bending.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of a gas-barrier film.    Polymer film base material (1)    Gas barrier layer (2)
NOVELTY - A photovoltaic cell comprises layer (A) comprising group IV element-containing solar cell emitter comprising doping-type material (a) or n-type material or p-type material, and window layer (B) comprising material (b1) chosen from III-V material and group IV element different from the group IV element in the layer (A), and doping-type material (b2) same as the doping-type material (a). The layer (B) is positioned adjacent to the layer (A). The window layer (B) forms heterointerface with the layer (A).    USE - Photovoltaic cell is used for method for generating energy for satellite and space vehicle, vehicle e.g. aircraft, spacecraft and surface and sub-surface water-based vehicles and energy storage system (all claimed) for domestic and commercial electricity production.    ADVANTAGE - The photovoltaic cell has high current density and energy conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for energy generation method.
NOVELTY - A composition comprises copper formate (II), an amine and a formic acid.    USE - Composition is used for manufacturing electronic devices e.g. printed wiring board and solar cell.    ADVANTAGE - The composition has improved electroconductivity, strength and durability.
NOVELTY - The device has a heat source arranged to heat a photovoltaic solar cell (2), and generation units (3) generating charge carriers in the cell. An ultrasound transducer (20) is intended to generate ultrasonic waves to be propagated in the cell. The generation units comprise injection units for injecting an electric current in the cell. The cell includes a tank intended to be filled by a liquid, and the tank comprises a liquid temperature regulator arranged to control temperature of the cell to a value or a target range of temperature.    USE - Device for restoring a photovoltaic solar cell containing silicon.    ADVANTAGE - The device allows an effective and homogeneous dissipation of increase in temperature of the cell during injection of the charge carriers when the cell submerges in the liquid so as to allow an restoration kinetics acceleration for the cell, thus obtaining temperature control of the cell while avoiding the thermomechanical problems of constraints and reducing processing time of the cell, and hence ensuring rapid and effective restoration of the cell based on silicon from effects of degradation under illumination and maintaining mechanical integrity and performance of the cell.    DETAILED DESCRIPTION - The liquid comprises ethylene glycol or glycerol or soluble cutting oil. An INDEPENDENT CLAIM is also included for a method for restoring a photovoltaic solar cell containing silicon.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a restoring device.    Support (1)    Photovoltaic solar cell (2)    Generation units (3)    Light source (3b)    Ultrasound transducer (20)
NOVELTY - Fabrication of group IV material (16) on silicon substrate (12) involves providing crystalline silicon substrate, epitaxially growing rare earth structure (14) on silicon substrate, and epitaxially growing single crystal group IV material film on rare earth structure.    USE - Fabrication of group IV material on silicon substrate used for manufacturing rare earth oxide/ group IV template for solar cell and photonic device.    ADVANTAGE - The method provides improved growth of rare earth oxide/group IV material on silicon substrate with favorable field screening.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of group IV material on silicon substrate.    Rare earth oxide/group IV template (10)    Silicon substrate (12)    Rare earth structure (14)    Group IV material (16)
NOVELTY - Manufacture of laminated material involves providing transfer layer (3) having corrugated shape comprising sequentially arranged shape retention layer (4) and contact bonding layer (5), laminating support film (2) having corrugated shape on the transfer layer, obtaining transfer film (1), contacting transferred material and contact bonding layer contained in the transfer layer, obtaining laminated material, and removing support film from the laminated material. The shape retention layer and the contact bonding layer contains metal alkoxide polycondensed product.    USE - Manufacture of laminated material. Uses include but are not limited to light emitting diode, liquid crystal display device, solar cell panel, sapphire substrate, and reflection-preventing board substrate.    ADVANTAGE - The method enables manufacture of laminated material having high heat resistance, photocatalyst property and electroconductivity property, by a simple process.    DETAILED DESCRIPTION - Manufacture of laminated material involves providing transfer layer having corrugated shape comprising sequentially arranged shape retention layer and contact bonding layer, laminating support film having corrugated shape on the transfer layer, obtaining transfer film, contacting transferred material and contact bonding layer contained in the transfer layer, obtaining laminated material, and removing support film from the laminated material. The shape retention layer and the contact bonding layer contains metal alkoxide polycondensed product formed on the support film. An INDEPENDENT CLAIM is included for transfer film.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of transfer film.    Transfer film (1)    Support film (2)    Transfer layer (3)    Shape retention layer (4)    Contact bonding layer (5)
NOVELTY - The light-heat energy conversion module (100) is provided with a metallic particle (124) dispersed and spreaded in the sole of a space side between nanowires (122,132) and a nanowire interval in the form of a cluster. A semiconductor material is arranged in a lower-side of a substrate (110). The shape lengthways spread toward the downward of the substrate opposite to the nanowire. The nanowires consisting of the semiconductor material are arranged in the upper side of the substrate. The nanowires boil the fluid in the lower-side of the substrate, in which latter nanowire formed is contacted.    USE - Light-heat energy conversion module for use in nanowires panel of a solar energy generating apparatus (all claimed) for power generation.    ADVANTAGE - The light-heat energy conversion module is provided with a metallic particle dispersed and spreaded in the sole of a space side between nanowires and a nanowire interval in the form of a cluster, and thus reduces the reflectivity of the sunlight through nanostructures, maximizes the sunlight absorption rate and maximizes the boiling heat transfer efficiency delivered through the nanostructures surface to the fluid.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a solar energy generating apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a boiling heat transmission procedure of a light-heat energy conversion module.    Light-heat energy conversion module (100)    Substrate (110)    Surfaces (120,130)    Nanowires (122,132)    Metallic particle (124)
NOVELTY - Composition comprises a silane coupling agent comprising silicon derivative (I), and heating medium comprising diphenyl ether.    USE - The heating medium composition is useful for a solar thermal power generation system (claimed).    ADVANTAGE - The heating medium composition ensures that the heating medium containing diphenyl ether is not decomposed in the pipe, so that the deterioration of the pipe is prevented, thus improving resistance of the solar thermal power generation system.    DETAILED DESCRIPTION - Composition comprises a silane coupling agent comprising silicon derivative of formula (I), and heating medium comprising diphenyl ether.    OR1-OR3 = 1-5C-alkoxy; and    X = vinyl, allyl, 3-glycidoxypropyl, 3-methacryloxypropyl, 3-aminopropyl, N-phenyl-3-aminopropyl or N-2-(aminoethyl)-3-aminopropyl.    An INDEPENDENT CLAIM is included for a pipe protection agent for protecting a pipe through which the heating medium comprising diphenyl ether is passed, comprising a silane coupling agent.
NOVELTY - A black curable resin composition comprises photosensitive resin (A) (meth)acryloylized with amine catalyst, photoinitiator (B), diluent (C), epoxy compound (D) and coloring agent (E). The coloring agent (E) contains a blue coloring agent (E1), yellow coloring agent (E2) and red coloring agent (E3).    USE - Black curable resin composition is used for printed wiring board (claimed) used in field of soldering resist, solar cell backsheet surface of light emitting diode.    ADVANTAGE - The black curable resin composition has excellent resolution, heat resistance and adhesiveness.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for printed wiring board, which is obtained by coating the black curable resin composition.
NOVELTY - Joining first component (10) with second component (12), comprises welding the first- and the second components using a welding filler material arranged as a film (14) between the first- and the second components, and at least one energy beam (20).    USE - The method is useful for joining first component with second component (claimed).    ADVANTAGE - The method makes use of the film which is inexpensive, and can be easily dimensioned, and is simple and economic.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic side view of welded plastic sheet, film and metal plate.    First component (10)    Second component (12)    Film (14)    Energy beam (20)    Supporting plate (23)
NOVELTY - A washing composition contains amine and formic acid, and carries out removal of copper oxide on the surface of metal copper. The product of nitrogen number in amine and number of moles of amine is less than the number of moles of formic acid.    USE - Washing composition for removal of copper oxide on surface of metal copper used in electroconductive copper ink during manufacture of electronic component e.g. printed wiring board and solar cell.    ADVANTAGE - The washing composition efficiently and reliably enables removal of copper oxide on the surface of metal copper.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for washing method.
NOVELTY - A phthalocyanine-substituted cellulose is new. The hydrogen atom of sixth position hydroxyl group contained in the glucose unit of cellulose in phthalocyanine-substituted cellulose, is substituted by group(s) chosen from phthalocyanine-type tetravalent group (I), phthalocyanine-type trivalent group (II), phthalocyanine-type bivalent group (III) and (IV), and phthalocyanine-type monovalent group (V).    USE - New phthalocyanine-substituted cellulose is used for film or coating liquid for manufacturing laminate for electronic device e.g. photoelectric conversion element and solar cell (all claimed).    ADVANTAGE - The new phthalocyanine-substituted cellulose has excellent solubility with respect to solvent and dispersibility. The electronic device using phthalocyanine-substituted cellulose has high carrier mobility and efficiency.    DETAILED DESCRIPTION - A phthalocyanine-substituted cellulose is new. The hydrogen atom of sixth position hydroxyl group contained in the glucose unit of cellulose in phthalocyanine-substituted cellulose, is substituted by group(s) chosen from phthalocyanine-type tetravalent group of formula (I), phthalocyanine-type trivalent group of formula (II), phthalocyanine-type bivalent group of formulae (III) and (IV), and phthalocyanine-type monovalent group of formula (V).    Z=triazole-type group of formula (i);    W1,W2=H, 1-12C alkyl or phenyl;    n,p=0-12;and    M=zinc, copper, cobalt, nickel, cadmium or two H.    INDEPENDENT CLAIMS are included for the following:    (1) laminate, which has a layer containing phthalocyanine-substituted cellulose; and    (2) manufacture of laminate, which involves coating the coating liquid on another layer, and drying.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of solar cell. (Drawing includes non-English language text)
NOVELTY - Aluminum base material (10, 16) is anodized with the voltage of 50-68 V in presence of oxalic-acid aqueous solution having concentration of 0.35 mol/L to less than 1 mol/L as electrolyte solution to obtain anodized porous alumina having fine concavo-convex structure on the surface. The temperature of the electrolyte solution is more than 10 degrees C and less than 20 degrees C.    USE - Manufacture of anodized porous alumina used for manufacturing mold for manufacturing molded product (all claimed). Uses include but are not limited to television, mobile telephone, meter panel, bathroom, solar cell component, mirror of motor vehicles, signboard, copier, scanner, visible light communication, optical waveguide, relief hologram, optical lens, polarization splitter, and cell culture sheet.    ADVANTAGE - The method efficiently provides anodized porous alumina having excellent external appearance, by simple method without using special apparatus. The molded product formed using anodized porous alumina has low haze value, and excellent reflection preventing performance and water-repellent performance. The level difference of crystal grain boundary is restrained. The regularity of protrusion in molded product is high. The space of protrusion in molded product is large.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of mold (18); and    (2) molded product.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view explaining the manufacture of mold.    Aluminum base materials (10,16)    Pore (12)    Oxide film (14)    Mold (18)
NOVELTY - The method comprises separating a cell breakage having a silicon content of greater than 98 mass% from starting materials, and treating the cell breakage with chloromethane and/or dichloromethane and hydrogen in the presence of catalyst during Mueller Rochow synthesis at a temperature of 350-650 degrees C. The formed gaseous methylchlorosilanes are separated by distillation. Solids remaining in a reactor are fed to the metal recycling. The starting materials are treated at a temperature of 400-550 degrees C.    USE - The method is useful for recycling disused solar modules and solar cells from silicon and silicon-containing components (claimed).    ADVANTAGE - The method is capable of economically recycling the disused solar modules and solar cells from silicon and silicon-containing components.
NOVELTY - Organic semiconductor compounds comprising thieno(2,3-f)benzothiophene repeating units (I).    USE - (I) are useful in organic thin films (claimed), which are useful in flat panel displays (including LCDs, organic LED displays, plasma display panels, surface-conduction electron-emitter displays (SEDs) and similar devices), transistors, solar cells, memory devices, photosensors, laser devices, and electronic devices.    ADVANTAGE - (I) provide the organic thin film with low bandgap, improved electrical properties, such as higher charge mobility, improved processability, and workability at a lower cost.    DETAILED DESCRIPTION - Organic semiconductor compounds comprising thieno(2,3-f)benzothiophene repeating units of formula (I), are new.    X1, X2 = S, Se or NRa1;    Ra1, Rc1 = 1-30C-linear or branched alkyl, 3-20C-cycloalkyl, 1-30C-linear or branched alkoxy, 6-30C-aryl, 7-30C-arylalkyl, 2-30C-heteroaryl (all optionally substituted), or H;    Rb1 = 1-30C-linear or branched alkyl, 3-20C-cycloalkyl, 1-30C-linear or branched alkoxy, 6-30C-aryl, 7-30C-arylalkyl or 2-30C-heteroaryl (all optionally substituted);    R1-R4 = 1-30C-linear or branched alkyl, 3-20C-cycloalkyl, 1-30C-linear or branched alkoxy, 6-30C-aryl, 7-30C-arylalkyl, 2-30C-heteroaryl (all optionally substituted), halo (-F, -Cl, -Br or -I), -CORb1 or -C(=O)ORc1;    D1 = 1-20C-aylene, 4-20-aromatic ring, 4-14-heteroaromatic ring or 6-30C-condensed polycyclic including a heteroaromatic ring (all optionally substituted);    a = 1-100 mole%; and    b = 0-99 mole%, based on a sum, 100 mole% of a and b.
NOVELTY - A transparent laminated film comprises multilayer film, a hardened layer in the front-back both sides of a base film, where the hardened layer exists in curable resin and the range whose average particle diameters are 1-200 nm, and contains microparticles whose relative standard deviations (standard deviation (sigma)/average particle diameter d) of a particle size distribution are 50 % or less.    USE - Transparent laminated film for use as base materials, such as solar cell, organic type solar cell, flexible display, organic electroluminescent illumination, touchscreen, color filter, backlight, and photoelectric-element board.    ADVANTAGE - The film has high dimensional stability and high transparency at the time of high temperature.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a transparent substrate having transparent laminate film as a base material.
NOVELTY - The semiconductor device (10) has a template layer that is formed above a substrate (11). The template layer is included with a set of lower nitride semiconductor layers (13) formed on a lower microlens array pattern (12) which is made of non-conducting substance and formed on the substrate. An upper micro lens array pattern (14) is formed below a set of upper nitride semiconductor layers (15) made of non-conducting substance, and above the set of lower nitride semiconductor layers. Two microlens array patterns are provided with hemi-spherical grain patterns.    USE - Semiconductor device such as transistor or optical device such as LED, laser diode, photo-detection device or solar cell (All claimed) used as backlight or keypad of cellular phone, display panel and lighting device.    ADVANTAGE - The crystallization of the nitride semiconductor layer can be improved. The optical extraction effect with the function of double or multi lens can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing substrate for semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows an exploded perspective view of the template layer of nitride semiconductor epitaxial structure.    Semiconductor device (10)    Substrate (11)    Lower microlens array pattern (12)    Lower nitride semiconductor layer (13)    Upper microlens array pattern (14)    Upper nitride semiconductor layer (15)
NOVELTY - A benzo-bisbenzofuran derivative (I) is new.    USE - New benzo-bisbenzofuran derivative is used in coating solutions used for forming organic semiconductor thin films e.g. semiconductor active layers of organic thin-film transistors, and in coating solutions used for non-luminous organic semiconductor devices (all claimed). Uses include but are not limited to organic thin-film solar cells, solid-state image sensors, gas sensors, organic rectifiers, organic inverters, and information recording elements.    ADVANTAGE - The new benzo-bisbenzofuran derivative economically provides organic thin-film transistors having high carrier mobility, negligible threshold voltage change after repeated driving, and excellent chemical stability and film density. The new compound has high crystallinity, and excellent solvent solubility and transistor characteristics.    DETAILED DESCRIPTION - A benzo-bisbenzofuran derivative of formula (I), is new.    R1-R10=H or substituent;and    any two adjacent groups of R1-R4 and R6-R9=optionally substituted benzene ring, with benzene ring formed by R2 and R3 and/or benzene ring formed by R7 and R8 being substituted.    An INDEPENDENT CLAIM is included for coating solution containing compound (I) and a polymer binder.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the structure of organic thin-film transistor element.    Substrate (11)    Electrodes (12,15a,15b)    Insulator layer (13)    Semiconductor active layer (14)
NOVELTY - Preparation of copper-indium-selenide-based or copper-indium-gallium-selenide-based light-absorbing layer involves preparing a light-absorbing ink including a precursor of copper, indium or gallium as an organic metal precursor, and a solvent, where a ligand in the organic metal precursor has a keto-enol tautomeric property, coating the obtained light-absorbing ink on a substrate and performing heat treatment.    USE - Preparation of copper-indium-selenide-based or copper-indium-gallium-selenide-based light-absorbing layer used for thin-film solar cells.    ADVANTAGE - The method enables economical preparation of copper-indium-selenide-based or copper-indium-gallium-selenide-based light-absorbing layer with reduced amount of residual carbon impurity. The thin-film solar cell containing the light-absorbing layer has high conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for light-absorbing ink.
NOVELTY - A multilayer structure barrier film is prepared by depositing plasma enhanced vapor into transparent substrate material, vacuuming under gas at 1-80 Pa, plasma etching, and depositing 20-1000 nm inorganic coatings.    USE - Method for preparing multilayer structure barrier film used for high-grade food and medicine packaging material, organic solar cell or organic electroluminescent element.    ADVANTAGE - The method is simple. The film is economical, and has smooth surface.
NOVELTY - This utility model belongs to the mechanical device, belonging to the technical field of key part in the solar battery assembly, relating to one kind of pre-coated copper belt of tin coater, comprising a copper substrate and said copper material is coated on the outer surface of the alloy layer, said alloy layer is further coated with a soldering flux layer. The utility model pre-coated tin-coated copper on the existing pre-coated copper belt of tin coater outer peripheral pre-coating soldering flux layer so that the finally obtained with the client using time can, without soaking, without drying, the client saves the material cost and shortens the production period, improves the production efficiency and reduces the production cost of photovoltaic component.
NOVELTY - The utility model claims one back contact solar cell wet etching transmission rod structure, comprising a transmission rod and transmission rod, the transmission rod is sleeved on the outer diameter of any one end of the transmission rod or two ends of edge etching wheel or/and hitching etching. The advantages of the utility model are: the utility model adopts small corruption roller, has simple structure, easy preparation, convenient to assemble, compatible with liquid method using etching device. The utility model can perfectly insulated solves the problem of back-contact battery, which avoids leakage, with no need of additional process, greatly reduces the production cost of back-contact battery, and is suitable for industrial mass production.
NOVELTY - The ultra-pure conductive silver paste preparation method involves adding ammonia water or nitric acid to adjust the potential of hydrogen (pH) value of solution in the range of 4-10, and adding dispersing agent to obtain mixed reaction solution. The ammonia water or nitric acid is added to adjust the pH value of solution to obtain mixed reducing solution. The mixed reaction solution and mixed reducing solution are pre-heated in a constant-temperature water bath boiler to temperature in the range of 20-80 degrees Celsius.    USE - Preparation method for ultra-pure conductive silver paste of solar cell.    ADVANTAGE - Improves photoelectric conversion efficiency of solar cells due to narrow grain size distribution, good dispersibility, and tap density of more than 4.5 grams per cubic centimeter. Enables preparation of ultra-pure silver powder without changing the characteristic of silver powder due to application of plasma technology. Decreases large amount of pure water and ethanol used that is good for large-scale production since plasma processing is simple.
NOVELTY - The preparation method involves filling protective atmosphere with nitrogen, nitrogen-hydrogen mixed gas, or a mixture of ammonia gas and argon gas, with argon gas as auxiliary gas. The nitriding temperature is divided into two sections or multi-sections, in which the first stage is 6000 degrees Celsius, 00 degrees Celsius. The highest heating temperature is 1300-1380 degrees Celsius. The heat preservation time is equivalent the dosage of the raw material. The raw material is then grinded to obtain nitrogen-enriched alpha-phase silicon nitride silicon carbide power.    USE - Preparation method for rich alpha-phase silicon nitride-silicon carbide powder, using recycled and purified silicon wafer wire-saw dust powder.    ADVANTAGE - The preparation method is simple, low-cost, easy for large-scale production, and can be used for realizing silicon wafer wire-saw mortar recovery tail material with high added value.    DETAILED DESCRIPTION - The volume fraction of the hydrogen in the mixture of nitrogen gas and hydrogen gas is 0-50%. The argon gas volume fraction is 0-80%. The recycling and purifying in the silicon wafer wire-saw dust powder silicon carbide phase according to the content of silicon nitride-silicon carbide product taking adjusting range can be 0-80%. The silicon wafer wire-saw dust powder is polysilicon and single crystal silicon solar cell sheet. The silicon wafer and electronic semiconductor industry used to produce wire saw cutting the tail mortar recovery material, is made up of silicon wafer wire-saw mortar online recycling tail material and offline recovery tail.
NOVELTY - The preparation method involves extruding wet ceramic solar plate, then delivering wet ceramic solar panel from the left to the right. The wet ceramic solar is then dried or fired. A thinning process is then performed, in which wet ceramic solar plate is thinned until ceramic solar panel takes shape. The thinning process is performed gradually.    USE - Preparation method for ceramic solar panel device (claimed).    ADVANTAGE - The preparation method provides a low-dust pollution process, with rapid operation, while able to reuse thinning device repeatedly.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a ceramic solar panel device.    DESCRIPTION OF DRAWING(S) - The drawing shows the ceramic solar panel preparation device.    Conveying platform (10)    Ceramic solar panel device (20)    First thinning device (21)    Second thinning device (22)    N-th device thinner (23)
NOVELTY - The method involves determining total amount of residual ammonia. The green light is displayed, when accumulated amount W1 is in normal range. The yellow light is displayed, when accumulated amount W2 is of 86-95 %. The red light is displayed, when accumulated amount W3 is of 96-100 %. The DCU is controlled, when electronic control unit (ECU) receives engine signal. The value measured by pressure sensor (1) and temperature sensor (2) is judged to reach preset value. The output of ammonia gas is controlled to realize metering function.    USE - Method for detecting residual amount of ammonia used as fuel for car using ammonia gas mass flow meter (claimed).    ADVANTAGE - The residual amount of ammonia can be easily detected in simple manner at low cost with high safety and reliability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an ammonia gas mass flow meter.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the process for detecting residual amount of ammonia.    Pressure sensor (1)    Temperature sensor (2)    Solid ammonia storage material (3)    Ammonia gas mass flow meter (5)    Ammonia-storing tank (7)
NOVELTY - The multi-junction gallium arsenide solar battery has P-type silicon carbide substrate whose surface is orderly stacked with low temperature P-gallium arsenide buffer layer, high temperature P-gallium arsenide buffer layer, bottom battery, top cell and N-gallium arsenide contact layer from bottom portion. A tunnelling junction is provided between bottom battery and middle battery. The bottom battery and middle battery are provided with a connecting structure.    USE - Multi-junction gallium arsenide solar battery.    ADVANTAGE - The high hot coefficient of the multi-junction gallium arsenide solar battery is ensured, so the stability and durability of the battery can be improved with high reliability. The silicon carbide substrate can effectively solve the lattice in multi-junction gallium arsenide battery.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a multi-junction gallium arsenide solar battery preparation method.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of the multi-junction gallium arsenide solar battery. (Drawing includes non-English language text)
NOVELTY - The method involves dipping a silicon-based battery sheet in ethyl alcohol solvent for 15-30 seconds. A silicon nanometer rod is dipped in metal salt solution. Ultrasonic cleaning process is performed by using concentrated nitric acid for 5 min. Complex agent is added with source solution and surface active agent to obtain quantum dots (QDs) colloid solution based on a magnetic force stirring environment condition. The QDs colloid solution is deposited in the silicon-based battery sheet. Hot process is performed by a vacuum drying box at temperature of 200-250 degrees Celsius for 5 min.    USE - Method for manufacturing a silicon nanometer rod /QDs composite efficient silicon-based solar cell sheet.    ADVANTAGE - The method enables adopting the silicon nanometer rod /QDs to improve absorption performance, photoelectric conversion efficiency, quantum confinement effect and hot carrier capturing efficiency. The method enables simplifying silicon-based solar cell sheet manufacturing process, improving material utilization rate and reducing production cost.    DETAILED DESCRIPTION - The battery sheet is made of single crystal silicon, polysilicon, amorphous silicon or microcrystalline silicon material.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a silicon nanometer rod/QDs composite efficient silicon-based solar cell sheet manufacturing method.
NOVELTY - A carbon fiber-loaded metal catalyst is obtained by mixing carbon fiber, graphitized additive and metal particles in the mass ratio of 100:0.01:0.01-100:50:90. The carbon fiber has diameter of 50 nm-5 mu m, porosity of 20-80%, specific surface area of ?2-2500 m2g-1 and pore volume of 0.1-15 mL.g-1. The graphitized additive is high-degree graphitized carbon material chosen from graphene oxide nanobelts, single-arm, double-arm or multi-arm carbon nanotubes, graphene oxide, graphene or graphene nano-sheet. The metal particles have diameter of 0.1-50 nm.    USE - Carbon fiber-loaded metal catalyst is used in fuel battery, lithium-ion battery, and super-capacitor hydrogen storage material.    ADVANTAGE - The carbon fiber-loaded metal catalyst has excellent stability, durability and electrochemical activity.    DETAILED DESCRIPTION - A carbon fiber-loaded metal catalyst is obtained by mixing carbon fiber, graphitized additive and metal particles in the mass ratio of 100:0.01:0.01-100:50:90. The carbon fiber has diameter of 50 nm-5 mu m, porosity of 20-80%, specific surface area of ?2-2500 m2g-1 and pore volume of 0.1-15 mL.g-1. The graphitized additive is high-degree graphitized carbon material chosen from graphene oxide nanobelts, single-arm, double-arm or multi-arm carbon nanotubes, graphene oxide, graphene or graphene nano-sheet. The metal particles have diameter of 0.1-50 nm. The metal particles are transition metal chosen from lanthanide metal, actinide metal, metal alloy, metal oxide, and metal salt. An INDEPENDENT CLAIM is included for preparation of carbon fiber-loaded metal catalyst.
NOVELTY - Photovoltaic cell comprises a first layer comprising a solar cell emitter layer comprising a group-IV layer having a doping type selected from p-type doping and n-type doping; and a second layer with opposite doping type relative to the first layer, the second layer comprising a material selected from a III-V material and a group-IV material, the second layer group-IV material being different from the first layer group-IV material; where a p-n junction is formed at a heterojunction between the first and second layers.    USE - The photovoltaic cell is useful for energy generation (claimed).    ADVANTAGE - Improved single-junction cells or subcells in a multijunction photovoltaic cell, especially solar cell, having multiple layers to form a heterostructure, are provided.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for energy generation involving providing a photovoltaic cell comprising a first layer comprising a solar cell emitter layer comprising from a group-IV layer having a doping type selected from p-type doping and n-type doping; and a second layer with opposite doping type relative to the first layer, the second layer comprising a material selected from a III-V material and a group-IV material, the second layer group-IV material being different from the first layer group-IV material; where a p-n junction is formed at a heterojunction between the first and second layers.
NOVELTY - Etching composition comprises: (a) 0.5-50 wt.% of base; (b) 10-80 wt.% alcohol; (c) 0.01-15 wt.% additive; and (d) water. The additive comprises at least one of boron oxide, boric acid, potassium borate, sodium tetraborate, aluminum chloride, silicon phosphate, boron phosphate, aluminum phosphate, sulfuric acid, formic acid, acetic acid, citric acid and/or nitric acid. The etching composition reacts on the semiconductor wafer at 120-200 degrees C to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas.    USE - The composition is useful for etching a semiconductor wafer (claimed) and fabricating a silicon chip solar cell.    ADVANTAGE - The composition: provides excellent texture structure on the surface of the semiconductor wafer; etches single surface of wafer, thus no need to cover a protection mask on the other surface of semiconductor wafer; fabricates silicon chip solar cell having high conversion efficiency; and provides silicon chip having excellent anti-reflectivity.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for etching a semiconductor wafer, comprising: applying a first etching composition to a first surface of a semiconductor wafer; and etching the semiconductor wafer at an etching temperature, where the first etching composition comprises (a)-(d) as above per se, where the additive includes at least one of boron oxide, boric acid, potassium boric acid, sodium tetraborate, aluminum chloride, aluminum hydroxide, phosphoric acid, silicon phosphoric acid, boron phosphate, aluminum phosphate, sulfuric acid, formic acid, acetic acid, citric acid and/or nitric acid.
NOVELTY - The solar cell is provided to set a carrier concentration of amorphous oxide semiconductor layer in photoelectric converting layer is lower than the carrier concentration of the amorphous oxide semiconductor layer that is far from the photoelectric converting layer. The thickness of the amorphous oxide semiconductor layer provided in the photoelectric converting layer side is 10 nm or less. The photoelectric converting layer is provided with a p-type compound semiconductor material that is provided with a chalcopyrite-type crystal structure.    USE - Solar cell.    ADVANTAGE - Since the carrier concentration of amorphous oxide semiconductor layer in photoelectric converting layer is lower than carrier concentration of amorphous oxide semiconductor layer that is far from photoelectric converting layer, the carrier recombination of copper indium gallium selenide (CIGS) photoelectric converting layer and electroconductive indium gallium zinc oxide (InGaZnO) amorphous oxide semiconductor layer can be suppressed effectively. Thus, the photoelectric conversion efficiency in the solar cell can be improved in effective manner.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view illustrating relationship between forbidden band width of CIGS and conversion efficiency of solar cell. (Drawing includes non-English language text)
NOVELTY - The solar cell (10) has amorphous oxide semiconductor layers (13,14) which are provided on a p-type silicon layer (12). A Ga content rate of the amorphous oxide semiconductor layer in the p-type silicon-layer is lower than the Ga content rate of amorphous oxide semiconductor layer in position that is far from p-type silicon layer. The p-type silicon layer is provided with single-crystal p-type silicon layer, polycrystal p-type silicon layer, and amorphous p-type silicon layer. The thickness of amorphous oxide semiconductor layer provided in p-type silicon-layer is 10 nm or less.    USE - Solar cell.    ADVANTAGE - Since the Ga content rate of the amorphous oxide semiconductor layer in the p-type silicon-layer is lower than the Ga content rate of amorphous oxide semiconductor layer far from p-type silicon layer, the carrier recombination of the silicon layer and the indium gallium zinc oxide (InGaZnO) amorphous oxide semiconductor layer can be suppressed effectively. Thus, the photoelectric conversion efficiency in the solar cell can be improved in effective manner.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of solar cell.    Solar cell (10)    Back surface electrode (11)    P-type silicon layer (12)    Amorphous oxide semiconductor layers (13,14)    Surface electrode (15)
NOVELTY - The apparatus has a tube (2) which accommodates the to-be-processed object (100). The tube is provided with an opposing portion (97). The to-be-processed object is exposed to the gas for heat processing. The opposing portion is positioned facing the internal peripheral surface (11b) of the opening portion (11) of the tube. The heat conductivity of the protection tube (7) is set to be larger than the heat conductivity of the tube.    USE - Apparatus for heat-processing of object e.g. glass substrate used in manufacture of solar cell and semiconductor device.    ADVANTAGE - Since the heat conductivity of the protection tube is set to be larger than the heat conductivity of the tube which accommodates the to-be-processed object, the protection tube is heated up rapidly. Thus the fall of the temperature of gas which touched the protection tube can be suppressed, and the adhesion of a foreign material in the inside of the tube which accommodates the to-be-processed object can be suppressed. The collision of the foreign material with the inner surface of the tube can be prevented. Thus the damage of the tube can be suppressed.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the heat-processing apparatus.    Tube (2)    Protection tube (7)    Opening portion (11)    Internal peripheral surface (11b)    Opposing portion (97)    To-be-processed object (100)
NOVELTY - The frame has multiple vertical support portions (100) and multiple lateral supports (200) for the support in a horizontal side of a solar cell panel (10). A pair of perpendicular covers is inserted in both sides of a perpendicular frame. A pair of perpendicular grippers fixes a wire (140) of the solar cell panel. The perpendicular frame is opened into the groove type to support a horizontal frame. The horizontal cover is inserted in the lower surface of the horizontal frame. The material of the lateral support and vertical support portion is aluminum, aluminum alloy or polyvinyl chloride.    USE - Frame for building integrated solar cell window and door.    ADVANTAGE - The perpendicular frame is opened into the groove type to support installed at the inner side of a horizontal frame, and thus facilitates the wiring work of the wire of the solar cell panel, sprucely covers the wire of the solar cell panel, improves the beauty of the outer tube, and prevents the tightening mistake of the wire of the solar cell panel and the short circuit of wire.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a building integrated photovoltaic system.    Solar cell panel (10)    Terminal unit (20)    Vertical support portions (100)    Wire (140)    Lateral supports (200)
NOVELTY - The method involves providing a crystalline silicon substrate. A graded single crystal germanium-tin layer is epitaxially grown on the silicon substrate using a grading profile to grade tin through the germanium-tin layer, where the germanium-tin layer has thickness in a range of approximately 3 micrometer to approximately 5 micrometer. A layer of III-V solar collection material is epitaxially grown on the germanium-tin layer, where the germanium-tin layer includes tin up to an interface with the layer of III-V solar collection material.    USE - Method for depositing III-V solar collection materials i.e. indium gallium phosphide materials, on a germanium-tin template on a crystalline silicon substrate of a solar collection device (all claimed) in a solar cell industry.    ADVANTAGE - The method enables growing III-V solar collection materials on single crystal germanium-tin on the silicon substrates so as to provide higher crystalline quality for germanium-tin material and improved interfaces between the adjacent germanium-tin layers, thus fabricating solar cells with increased efficiency at low cost in an easier manner.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a method for fabricating a solar cell on a silicon substrate    (2) an III-V solar collection material    (3) a solar collection device.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph representing grading profiles for deposition of a germanium-tin template.
NOVELTY - The germanium template fabrication method involves providing a crystalline silicon substrate (12) and epitaxially growing a thin layer (14) of germanium doped with tin on the silicon substrate. The tin is distributed adjacent the silicon substrate. A single crystal layer of germanium on the thin layer of germanium doped with tin is epitaxially grown. The epitaxial growth of germanium continues on thin layer resulting in a thick layer (16) of pure germanium in forming a germanium template (10).    USE - Fabrication method for germanium template on silicon substrate used in photonic, electronic or solar device.    ADVANTAGE - Provides new and improved methods for the growth of single crystal germanium templates on single crystal silicon substrates and enables growth of IV and III-V materials on silicon substrates by fabricating a germanium template on a silicon substrate.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a IV or III-V device.    DESCRIPTION OF DRAWING(S) - The drawing shows a simplified layer diagram of IV/III-V solar material grown on the germanium template.    Germanium template (10)    Silicon substrate (12)    Thin layer (14)    Thick layer (16)    IV and III-V material structure (20)
NOVELTY - The utility model claims one crystal silicon photovoltaic component, comprising a low-iron ultra-white toughened glass (1), upper adhesive film (2), a battery (3), a lower glue film (4), a back plate (5), wherein the lower glue film (4) is higher than upper adhesive film (2), this utility model has the film's dosage compared with the common component is reduced by 5%, reduces the cost's component's performance component will not be influenced.
NOVELTY - A composition containing silane compound is coated on a board to form a coating film, by heat processing or optical process. The coating film is contacted with heated gas and the silane compound on the board under normal pressure and normal-pressure chemical vapor deposition process, to form silicon film.    USE - Formation of silicon film used for e.g. integrated circuits and solar cells.    ADVANTAGE - The method economically provides the silicon film having excellent quality, adhesiveness and high density. The formation method is simple and does not require any special apparatus such as heavy, thick, long and large high-vacuum apparatus.
NOVELTY - The method involves forming a boron silicate glass (BSG) film (2) on a surface of an N-type wafer (1) by CVD. An NSG film (3) is formed on the BSG film by CVD. An N-type diffused layer (5) is formed in a back surface of the N-type wafer. A P-type diffused layer (4) is formed in the surface of the N-type wafer simultaneously by heat-processing in the gas atmosphere containing an N-type dopant. The BSG film, the NSG film and an oxide film formed on the N-type wafer are removed simultaneously by heat processing. A surface top PSG film is formed on a P-type wafer by CVD.    USE - Method for manufacturing a semiconductor device i.e. solar cell (claimed).    ADVANTAGE - The method enables removing the BSG film, the NSG film and the oxide film formed on the wafer simultaneously by heat-processing, thus enabling reduction of material cost and shortening of manufacture period by simplification of manufacturing process. The method enables controlling P-type diffused layer formation and N-type diffused layer formation independently, thus manufacturing a semiconductor device with optimal structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a structure for manufacturing a solar cell. '(Drawing includes non-English language text)'    N-type silicon wafer (1)    BSG film (2)    NSG film (3)    P-type diffused layer (4)    N-type diffused layer (5)    Thermally oxidized film (6)    Nitride film (7)
NOVELTY - The method involves etching liquid (2) that is supplied to semiconductor substrate such as silicon substrate (11). The substrate is maintained on conditions to which bubble generate continuously by etching reaction in etching liquid. The etch process is performed to form unevenness in surface of substrate by setting bubble as a micro mask. The etch process including detachment process is performed to disconnect intermittently bubble which grew large from on substrate. The detachment process is performed to rotate substrate intermittently.    USE - Method for manufacturing substrate for solar cells (claimed).    ADVANTAGE - Since etch process is performed to form unevenness in the surface of the semiconductor substrate by setting bubble as a micro mask and etch process including detachment process is performed to disconnect intermittently bubble which grew large from on substrate, a fine texture can be formed with high density in the substrate surface of the substrate and the substrate with higher generating efficiency and lower light reflectivity can be obtained.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a substrate manufacturing apparatus for solar cells; and    (2) the substrate for solar cells.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the substrate manufacturing apparatus for solar cells.    Etching tank (1)    Etching liquid (2)    Support stand (3)    Support stand handle (4)    Silicon substrate (11)
NOVELTY - The method involves diffusing dopant i.e. opposite p or n-type dopant, into a first surface of a silicon substrate (10) to form a heavily doped layer on the first surface. Barrier material is formed in trenches (11). The first surface is selectively etched to reduce thickness of the heavily doped layer outside the trenches to form a lightly doped layer while the heavily doped layer remains in the trenches. The barrier material is removed to define the heavily doped layer arranged in the trenches and the lightly doped layer in regions of the first surface outside the trenches.    USE - Method for fabricating a silicon solar cell.    ADVANTAGE - The method enables utilizing a selective emitter used to reduce contact resistance between a front contact and a semiconductor and to remain a preferred lateral conductivity of a non-electrode region, where the selective emitter comprises higher doping concentration in a local region and lower doping concentration in other region so as to obtain lower electrode-semiconductor contact resistance and preferred short-wavelength optical response. The method enables improving pass production with high yield and without extra high-cost facilities and complex procedure if the trenches comprise large enough depths for about 30 micrometer and fabricating a solar cell with high performance at low cost through easy procedure. The method enables utilizing silver paste with faster diffusion rate than phosphorus during co-firing, so that leakage current is worsened so as to balance-off the selective emitter.    DETAILED DESCRIPTION - The silicon substrate is a mono-crystalline silicon substrate or multi-crystalline silicon substrate and P-type or n-type doped silicon substrate. An INDEPENDENT CLAIM is also included for a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a silicon solar cell.    Silicon substrate (10)    Trenches (11)
NOVELTY - The manufacturing method involves applying a solvent, containing organic solvent, metal particle and insulating polymer, and an electroconductive ink containing water, to a predetermined region of a base material (11). A conductive pattern is formed by supplying electricity to the predetermined region, by applying tension to the base material, by allowing the region to generate heat, and by melting the metal particles.    USE - Manufacturing method for substrate, e.g., flexible substrate. Uses include but are not limited to organic electroluminescent display, solar cell, and electronic paper.    ADVANTAGE - Enables stable reduction of the resistance value of the board since the conductive pattern is formed by supplying electricity to the predetermined region, by applying tension to the base material, by allowing the region to generate heat, and by melting the metal particles.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the manufacturing method of the substrate.    Base material (11)    Pattern formation apparatus (31)    Inkjet head (41)    Drying furnace (51)    Release sheet (61)
NOVELTY - The photoelectric conversion element has a substrate (11) on which a lower conductive nitride semiconductor layer (16) is provided. An upper conductive nitride semiconductor layer (14) is provided is on a photoelectric converting layer (15). An indium composition ratio is high in a region of 6% of a depth from an interface of a middle buffer layer (17) and the photoelectric converting layer. The indium composition ratio is smaller than an aluminum composition ratio in a region from a point in which the indium composition ratio is high to the interface.    USE - Photoelectric conversion element used for tandem-type nitride semiconductor solar cell element.    ADVANTAGE - The photoelectric conversion element is provided with high curve factor. The accumulation of the distortion energy in the photoelectric converting layer can be prevented, as the middle buffer layer can be inserted directly under the photoelectric converting layer. High crystallinity can be provided.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the photoelectric conversion element.    Substrate (11)    Upper conductive nitride semiconductor layer (14)    Photoelectric converting layer (15)    Lower conductive nitride semiconductor layer (16)    Middle buffer layer (17)
NOVELTY - The solar cell has a VIB metal thin film that is deposited on a substrate (106). A polycrystalline III-V semiconductor thin film is deposited on the metal thin film. The substrate is made of metal foil, aluminum, molybdenum, or tungsten. The metal thin film is made of molybdenum or tungsten. The polycrystalline semiconductor thin film is made of indium phosphide or gallium arsenide.    USE - Solar cell for producing power using close-spaced sublimation (CSS) technique.    ADVANTAGE - Both spatial control and morphology control are allowed when indium phosphide crystals directly on metal foils by using CSS technique. Efficient transfer of source material to the substrate is ensured since the CSS technique provides small precursor transport distance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the CSS system.    Graphite blocks (102)    Substrate (106)    Indium phosphide source powder (108)    Spacer (110)    Thermocouples (114)
NOVELTY - A multi layer structure comprises a film layer containing copper (Cu), indium and gallium, and at least one selenium (Se), tellurium (Te), or sulfur (S) that is annealed at an average heating rate of at least 1 degrees C per second and cooled after removal of excess material including Cu and at least one S, Se, or Te at an average cooling rate of at least approximately 0.1 degrees C per second.    USE - As a multi layer structure (claimed) used in forming chalcogenide absorbers for photovoltaic devices; and used as photon absorbers in thin film based solar cells.    ADVANTAGE - The multi layer structure provides high volume manufacturing of thin film layers with high throughput and yield.    DETAILED DESCRIPTION - A multi layer structure comprises a film layer containing Cu~a(In1-xGax)~b (where alpha is greater than beta , and x is 0 or 1) and at least one Se, Te, or S that is annealed at an average heating rate of at least 1 degrees C per second and cooled after removal of excess material including Cu and at least one S, Se, or Te at an average cooling rate of at least approximately 0.1 degrees C per second. The multi layer structure further comprises an underlying layer on a substrate; and an overlying layer on the film layer.
NOVELTY - The method involves forming separated layer by depositing layered substance powder on first substrate. The thin film of layers is formed on formed separated layer. A second substrate is laminated on outermost surface of formed thin film. The laminated main portion precursor is produced and that is separated from first substrate side in separated layer between first substrate and second substrate. The thin film is provided on substrate including obtained laminated main portion which having thin film on second substrate.    USE - Method for manufacturing laminated main portion for solar cell, semiconductor device, organic electroluminescent (EL), barrier film, and semiconductor element installed in window of building, vehicle, and wall.    ADVANTAGE - The manufacturing process of laminated main portion can be simplified easily in efficient manner.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the laminated main portion manufacturing process. (Drawing includes non-English language text)
NOVELTY - The apparatus has modification control unit (13a) that controls supply amount of raw fuel to modifier (2), and supply amount of water to steam generation device (6). A pressure detector (12) detects pressure of water vapor supplied to modifier from steam generation device. The timing, in which the change of supply amount of raw fuel to modifier is increased, is determined, when production amount of hydrogen-containing-gas in modifier is increased, based on detection result of pressure detector after increasing the change of supply amount of water to steam generation device.    USE - Hydrogen-containing gas generation apparatus for fuel cell system.    ADVANTAGE - The ratio of the raw fuel and water vapor that are supplied to the modifier is controlled precisely.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of adjusting production amount of hydrogen-containing-gas in modifier.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of fuel cell system. (Drawing includes non-English language text)    Modifier (2)    Steam generation device (6)    Pump (11)    Pressure detector (12)    Modification control unit (13a)
NOVELTY - A dual phase structure thin material (1) comprises indium-antimony nanoparticles crystal phase (2), and matrix (3) which is oxide phase of metal.    USE - Dual phase structure thin material is used as wavelength-variable inorganic optoelectronic element for solar cell.    ADVANTAGE - The highly efficient dual phase structure thin material is economical, enables favorable package film-forming by phase-separation of oxide crystal phase and efficient conversion of sunlight.    DETAILED DESCRIPTION - A dual phase structure thin material comprises indium-antimony nanoparticles crystal phase, and matrix which is oxide phase of metal (M). The dual phase structure thin material is of formula: (InSb)100-x-yMxOy.    x=23-49;    y=35-65;    x+y=70-98;and    M=Ti, In and/or Zn.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of dual phase structure thin material.    Dual phase structure thin material (1)    Indium-antimony nanoparticles crystal phase (2)    Matrix (3)
NOVELTY - The method involves laminating (S11) a buffer layer on a substrate. A flexible substrate is laminated (S12) on the buffer layer. A transparent conducting oxides thin film is deposited (S13) on the flexible substrate. The deposited transparent conducting oxides thin film is posting-processed (S14) on the flexible substrate. The deposited flexible substrate is separated (S15) from the buffer layer through the transparent conducting oxides thin film.    USE - Method for manufacturing a flexible electronic device, such as organic solar cell and touch panel.    ADVANTAGE - The deposited transparent conducting oxides thin film is posting-processed on the flexible substrate and the deposited flexible substrate is separated from the buffer layer through the transparent conducting oxides thin film, thus improves the quality of the life of the human with a health care, reduces the cost of the flexible substrate, prevents the bending of the flexible substrate by heat, ensures the plasma of the high power at high temperature, improves the flexible electric component, and also ensures the excellent performance of the flexible electric component.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a manufacturing method of flexible electronic device. (Drawing includes non-English language text).    Laminating the buffer layer on the substrate (S11)    Laminating the flexible substrate on the buffer layer (S12)    Depositing the transparent conducting oxides thin film on the flexible substrate (S13)    Post-processing the deposited transparent conducting oxides thin film on the flexible substrate (S14)    Separating the deposited flexible substrate from the buffer layer through the transparent conducting oxides thin film (S15)
NOVELTY - A high current density carrying nano granular material comprises conducting nano crystals (63) embedded in a matrix containing insulating carbon-free material.    USE - High current density carrying nano granular material is used for electrical component, and arrays of field emission electron or ion sources, sheets, long wire deposition, power cables, multiple pixel aerial photon detector, fast imaging in image resizer, visible and X-ray regime, and solar cell (all claimed).    ADVANTAGE - The nano granular material with large grain size provides material having excellent electroconductivity, radiation sensitivity and durability, and enables high electromagnetic conversion in solar cells.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) electrical component;    (2) manufacture of high current density carrying nano granular material; and    (3) arrangement for manufacturing high current density carrying nano granular material.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram for arrangement for nano granular material.    Electron beam (60)    Precursor molecules (61,62,67)    Nano crystals (63)    Radicals (69)    Reaction chamber (610)
NOVELTY - A glass substrate (5) comprises 50-65 %mass silicon dioxide, 8-15 %mass aluminum oxide, 0-1 %mass boron trioxide, 0-10 %mass magnesium oxide, 1-12 %mass calcium oxide, 6-12 %mass strontium oxide, 0-3 %mass barium oxide, 1-7 %mass zirconium oxide, 2-8 %mass sodium oxide, and 0-8 %mass potassium oxide. The sum of total amount of magnesium oxide, calcium oxide, strontium oxide, and barium oxide contained in the glass substrate is 15-30 %mass. The ratio of strontium oxide with respect to sodium oxide contained in the glass substrate is 0.8-2.5.    USE - Glass substrate is used for solar cells e.g. copper-indium-gallium-selenide solar cell and cadmium telluride solar cell (all claimed).    ADVANTAGE - The glass substrate has excellent strength, alkali-diffusibility, moldability, and loss-of-clarity prevention property, high glass transition point temperature, desired average coefficient of thermal expansion, and reduced density, and provides the solar cells with excellent power-generating efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the copper-indium-gallium-selenide solar cell.    Copper-indium-gallium-selenide solar cell (1)    Glass substrate (5)    Positive electrode (7)    Buffer layer (11)    Negative electrode (15)
NOVELTY - Manufacture of organic polymer thin film involves preparing solution of raw material compound, forming thin film on the surface of a base material, exposing and irradiating the surface of base material with plasma or electron beam, polymerizing the film, and forming organic polymer thin film.    USE - Manufacture of organic polymer thin film (claimed). Uses included but are not limited to medical agent sheet, drug delivery system, filter, protection sheet, sterilization film, cell culture sheet, fuel cell, poultice, agriculture, sample observation of living organism, etc.    ADVANTAGE - The method efficiently provides organic polymer thin film having excellent gas-barrier property, permeability and selective-adsorption property.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for organic polymer thin film, which has composition continuously inclined from the surface of thin film to the cross-sectional direction of the thin film.
NOVELTY - Manufacturing graphene involves: preparing a carrier member on which the graphene is formed on one surface; exposing the graphene to dopant vapor to dope the graphene; transferring the doped graphene onto a target member; and removing the carrier member.    USE - The method is useful for manufacturing graphene (claimed) used in a display device, an electronic device, a photoelectric device, a battery, and a solar cell.    ADVANTAGE - The method produces high quality graphene with an improved electrical characteristic in large quantities.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is manufacturing a graphene film, which involves: preparing a roll-type heat-releasable film in which the graphene film is formed on one surface; exposing the graphene film to dopant vapor to dope the graphene film; transferring the doped graphene film onto a roll-type target film; and removing the heat-releasable film, where the operations are performed in one direction according to a roll-to-roll method.
NOVELTY - Nanoparticle including metal particles and anionic ligands bonded to an outer surface of the metal particles, is new, where the metal particles includes a metal seed with a thickness of 0.5-50 nm, and a metal shell covers the metal seed.    USE - The nanoparticle is useful in an antiviral agent or an antimicrobial agent for an air cleaning system and a water treatment system, and useful as a catalyst of a fuel cell.    ADVANTAGE - The nanoparticle can be prepared in a simple and efficient manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparing nanoparticle.
NOVELTY - The nitride semiconductor element has an n-type-semiconductor layer (2n) and a p-type-semiconductor layer (2p). An active layer (11) for light emission is formed by the nitride semiconductor and is arranged between the n-type and p-type semiconductor layers. The acceptor impurity is added to an intermediate layer (16) which is positioned among the active layers in which the light is converted into an electric current. Magnesium, zinc, beryllium, calcium, strontium or barium is used as acceptor impurity.    USE - Nitride semiconductor element such as nitride semiconductor light-emitting device such as LED and semiconductor laser, and nitride semiconductor light receiving element (all claimed) e.g. solar cell.    ADVANTAGE - The light emission by electric current injection or light reception can be performed in the active layer of p-type-semiconductor layer side and n-type-semiconductor layer side.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a nitride semiconductor light-emitting device;    (2) a nitride semiconductor light receiving element; and    (3) a manufacturing method of nitride semiconductor element.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view of the nitride semiconductor light-emitting device.    N-type-semiconductor layer (2n)    P-type-semiconductor layer (2p)    Active layer (11)    Barrier layer (15)    Intermediate layer (16)
NOVELTY - Cyclohexasilane (2) accommodated in a raw material tank (1) is passed towards a vaporizer (8) through a sending line, and cyclohexasilane is vaporized with vaporizer. The silicon film is formed by chemical vapor deposition with vaporized cyclohexasilane in reaction chamber (13).    USE - Formation of silicon film e.g. amorphous silicon film and polysilicon film for semiconductor device and electronic device e.g. thin-film transistor, solar cell, display component and integrated circuit.    ADVANTAGE - The method enables formation of silicon film having high purity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) cyclohexasilane package; and    (2) silicon film forming apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the silicon film forming apparatus.    Raw material tank (1)    Cyclohexasilane (2)    Vaporizer (8)    Heater (10)    Reaction chamber. (13)
NOVELTY - A gas barrier film has gas barrier layer on surface(s) of polymer film base material (1). Gas barrier layer has sequential lamination of layer (a) having compound essentially containing element(s) of groups 3-14, and layer (b) (4) essentially containing silicon compound. Layer (a) has layered area (1A) (2) which is located in polymer film base material side measured by X-ray reflectance method, and layered area (1B) (3) adjacent to layer (b) and having thickness of 0.2-20 nm. Density of area (1B) is less than density of area (1A), and is higher than density of layer (b).    USE - Gas barrier film (claimed). Uses include but are not limited to packaging material for packing foodstuff and pharmaceuticals, solar cell, electronic paper, flat panel television, organic electroluminescent electronic component, large-sized liquid crystal display and high-definition display.    ADVANTAGE - The gas barrier film has excellent gas-barrier property with respect to water vapor, transparency and heat resistance.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of gas barrier film.    Polymer film base material (1)    Areas (2,3)    Layer (4)
NOVELTY - Manufacture of II-type germanium clathrate involves maintaining germanium wafer and sodium by interval of 5-20 mm, heating at 300-480 degrees C under atmospheres of inert gas for 30 minutes to 10 hours, and heating at 200-350 degrees C under negative pressure of 10-2 Pa or less for 2-72 hours.    USE - Manufacture of II-type germanium clathrate. Uses include but are not limited to semiconductor raw material for superconductor, thermo-element and solar cell.    ADVANTAGE - The solar cell formed using semiconductor raw material has improved generating efficiency.
NOVELTY - An alicyclic epoxy compound (I) is new.    USE - New alicyclic epoxy compound used as reactive diluent and stabilizer e.g. acid acceptor. Uses include but are not limited to optical semiconductor sealing material, adhesive agent, electric insulation material, ink, coating material, transparent sheet, optical element, electronic paper, solar cell substrate, optical waveguide, etc.    ADVANTAGE - The new alicyclic epoxy compound has excellent solubility with respect to organic solvent, and low volatile property.    DETAILED DESCRIPTION - An alicyclic epoxy compound of formula (I) is new.    R1-R11=H or linear or branched 1-4C alkyl;and    Ra=branched 8-23C alkyl.    An INDEPENDENT CLAIM is included for manufacture of alicyclic epoxy compound.
NOVELTY - A perylene compound (I) or (II) is new.    USE - New perylene compound is used for solar cell module for solar power generation device (all claimed).    ADVANTAGE - The solar power generation device formed using the solar cell module containing perylene compound absorbs light of long wavelength, and has excellent power generation efficiency.    DETAILED DESCRIPTION - A perylene compound of formula (I) or (II) is new.    Z1=H, hydroxy, alkyl, alkoxy, phenyl, phenoxy, or benzyl;    Ar'1,Ar'2=group of formula (i)-(iii);    R11-R13=H, or alkyl;and    n11,n12,n13=1-3.    An INDEPENDENT CLAIM is included for solar cell module, which has light guide having light incident surface and light exit surface area smaller than the light incident surface and contains perylene compound (I), and solar cell element which generates power.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of solar cell module.    Solar cell module (1)    Light guide (2)    Solar cell element (3)    Reflecting plate (4)    Frame (5)
NOVELTY - A nano-silicon-phosphor-slurry comprises 10-30 pts. wt. phosphorus-coated nanometer silicon powder, 5-15 pts. wt. additive, and 50-85 pts. wt. organic solvent, where the concentration of the phosphorus in phosphorus-coated nanometer silicon powder is 5-20%, the additive comprises 10-30 pts. wt. lead oxide, 20-60 pts. wt. polyphosphoric acid trimethylsilyl ester and 30-70 pts. wt. terpineol, and the organic solvent is terpineol or sandalwood.    USE - Nano-silicon-phosphor-slurry for preparing selective emitter cell (claimed) and solar battery.    ADVANTAGE - The slurry has better ohmic contact, enhanced adhesive force silver grid line.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for INDEPENDENT CLAIMS are also included for the following:    (1) a method for preparing a nano-silicon-phosphor-slurry    (2) a method for utilizing nano-silicon-phosphor-slurry for preparing selective emitter cell.
NOVELTY - A sodium salt comprises sodium halide, sodium compound and/or sodium borate.    USE - Sodium salt used in thin film solar cell for manufacturing battery IB-IIIA-VIA chalcopyrite semiconductor absorption layer.    ADVANTAGE - The sodium salt improves polycrystalline thin film IB-A III-IVA semiconductor absorption layer structure.    DETAILED DESCRIPTION - Sodium salt comprises sodium halide (NaX), sodium compound (Na2Y') and/or is sodium borate (NaBO3).    X=F, Cl or Br; and    Y'=O, S or Se.    DESCRIPTION OF DRAWING(S) - The drawing is a perspective view illustrating a thin film solar cell.
NOVELTY - A compound is new.    USE - New compound is used as donor material for preparation of organic solar cell in photoactive layer (claimed).    ADVANTAGE - Compound has good film forming, high photoelectric conversion efficiency, organic micromolecule donor, narrower band gap, wide spectral band, good transmission of electronic device, and increased solubility of organic compound.    DETAILED DESCRIPTION - A compound of formula (1), formula (2), or formula (3) is new.    A1,A2,A3=formulae (Ia)-(Ic);    D1,D2,D3=formulae (Id)-(If);    Ar1,Ar2,Ar3=formulae (Ig)-(Ik); and    R1-R2-R3-R4=8-16C.    An INDEPENDENT CLAIM is included for preparation of argon-containing compound which involves blending with (6,6)-phenyl-C61-butyric acid methyl ester (PCBM) receptor material of organic solar battery photoactive layer.
NOVELTY - The material has nickel nano particles attached with Cea8Gda2O1T material and deposited on a GDC surface, where mass ratio of the GDC and the nickel is 1: 0.3 to 1: 0.7.    USE - One-dimensional nanometer fiber base Ni-GDC composite anode material for intermediate and low temperature solid oxide fuel battery field.    ADVANTAGE - The material has better dispersibility and binding of nickel and ceramic, and can prepare anode electrode and reduces agglomeration of nickel in an effective manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a one-dimensional nanometer fiber base Ni-GDC composite anode material preparation method.    DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view of a one-dimensional nanometer fiber base Ni-GDC composite anode material.
NOVELTY - A photovoltaic building glass, comprising one upper cover board low-iron toughened glass (1), the toughened glass (5) and the lower cover plate's between the solar battery sheet series and parallel group (3), the electric energy output end of said photovoltaic building glass's connecting inverter device, power supply, said inverter control end connecting the constant-frequency integration control module. Said inverter comprises a's connecting input end of the PI adjusting module, constant-frequency integration control module, a PWM circuit module, a bridge module and output end, said output end of the feedback inverter output inductance current to said constant-frequency integration control module. The utility model is based on constant-frequency integration control inverter, a stable output alternating current, the current the same frequency and the same phase with the power grid's sine wave, so as to effectively reach the grid-connected power supply.
NOVELTY - The method involves cleaning a mono-crystalline silicon piece. The cleaned silicon piece is placed into alkaline solution. A surface of the silicon piece is covered with an oxide layer. The surface of the silicon piece is cleaned by utilizing acidic solution. A silicon dioxide film and a silicon nitride-reflection film are grown on the silicon piece based on magnetic control sputtering technique, hot oxidation technique or PECVD technique. Thicknesses of the silicon dioxide film and the silicon nitride-reflection film are 0.1-0.4 micrometer and 0.08-0.15 micrometer, respectively.    USE - Method for manufacturing a solar battery single crystal silicon sheet.    ADVANTAGE - The method enables reducing reflection rate in full spectrum range and improving conversion efficiency of the solar cell in an effective manner.    DESCRIPTION OF DRAWING(S) - The drawing shows a photographic view illustrating a solar battery single crystal silicon sheet manufacturing method.
NOVELTY - The method involves preparing a thin film by selecting zinc acetate as zinc source, thioacetamide as sulfur source, sodium citrate as complexing agent, acetic acid and acetate buffer solution as pH value control solution through a chemical bath deposition technique. Doping process is performed by taking indium sulfate as a doping source. Annealing process is performed at annealing temperature of 350 degree Celsius for 1.5 hours in nitrogen gas atmosphere by vapor deposition technique. Cooling process is performed at room temperature to obtain an indium-doped zinc-sulfide thin film.    USE - Method for manufacturing an indium-doped zinc-sulfide thin film that is utilized as a buffer layer material of a thin film solar cell (all claimed).    ADVANTAGE - The method enables adopting a non-vacuum chemical vapor deposition to control the film component composition, reduce manufacturing cost and realize large-scale production of the zinc-sulfide thin film, and introducing doping impurities to reduce resistivity of the zinc-sulfide thin film in range of 0.26 megohm-cm at doping rate of 2at %, maintain low impurity phase in the thin film and achieve high optical transmission rate of 85% in a visible light area based on test result.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an indium-doped zinc-sulfide thin film application.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view illustrating doping concentration of an indium-doped zinc-sulfide thin film. '(Drawing includes non-English language text)'
NOVELTY - The method involves removing an anti-reflecting film from an unqualified solar battery. A reflecting film is replaced on a solar battery sheet. Information of the unqualified solar battery is printed. Impurities of the unqualified solar battery are removed. The unqualified solar battery is soaked in hydrofluoric acid solution. Hydrofluoric acid solution of the unqualified solar battery is removed. The solar battery sheet is soaked in alkaline solution i.e. potassium hydroxide solution. A qualified solar battery sheet is obtained.    USE - Unqualified solar battery sheet coating processing method.    ADVANTAGE - The method enables simplifying coating process, reducing fragment rate and processing cost, avoiding re-etching risk and improving qualified solar battery sheet obtaining efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating an unqualified solar battery sheet coating processing method.'(Drawing includes non-English language text)'
NOVELTY - The system has a flexible heating fabric (1) arranged with a metal wire or metal plating layer (4), where a warp and a weft yarn are woven with the metal wire or metal plating layer. A temperature measuring and control module (2) is provided with an intelligent mobile phone (19), a single chip, a temperature sensor (7), a switch triode, a keyboard (11) and a display (12). A power supply unit is connected with a solar cell and a lithium battery (14). The lithium battery is connected with the flexible heating fabric by the switch triode.    USE - Flexible fabric heating system.    ADVANTAGE - The system has temperature controlling function, and can improve fabric resistance. The fabric is simple to prepare.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a flexible fabric heating system.    Flexible heating fabric (1)    Temperature measuring and control module (2)    Metal wire or metal plating layer (4)    Temperature sensor (7)    Keyboard (11)    Display (12)    Lithium battery (14)    Intelligent mobile phone (19)
NOVELTY - Preparing copper aluminum oxide powder comprises (i) adding cuprous oxide and aluminum hydroxide according to weight ratio 1:1-4 into polyvinyl alcohol respectively, where the amount of polyvinyl alcohol accounts for 64-78%, and magnetic stirring and dissolving completely at room temperature to form two sols, (ii) mixing two sols and magnetic stirring to obtain precursor sol, (iii) drying the precursor sol at 135-175 degrees C to obtain dry sol, and (iv) grinding the dry sol in an agate mortar, placing in a sintering furnace, synthesizing and annealing.    USE - The method is useful for preparing copper aluminum oxide powder (claimed).    ADVANTAGE - The method produces high purity product, which is analyzed by morphology analysis, photoluminescence analysis and infrared spectroscopic analysis, and is useful in preparing optical devices.    DETAILED DESCRIPTION - Preparing copper aluminum oxide powder comprises (i) adding cuprous oxide and aluminum hydroxide according to weight ratio 1:1-4 into polyvinyl alcohol respectively, where the amount of polyvinyl alcohol accounts for 64-78%, and magnetic stirring and dissolving completely at room temperature to form two sols, (ii) mixing two sols and magnetic stirring to obtain precursor sol, (iii) drying the precursor sol at 135-175 degrees C to obtain dry sol, and (iv) grinding the dry sol in an agate mortar, placing in a sintering furnace, synthesizing by adjusting the temperature from the room temperature to highest temperature of 1150 degrees C, 1180 degrees C, and 1200 degrees C, and annealing.
NOVELTY - Preparing highly oriented zinc oxide nano-cone array structure material by wet chemical growth method, comprises using sol-gel method to prepare zinc oxide seed precursor, then coating zinc oxide seed precursor on the substrate to form a thin film, hot processing to obtain nano zinc oxide crystal seed layer, placing the crystal seed layer in a reaction vessel with the substrate surface suspended reversely and immersing in zinc oxide growing solution, and preparing zinc oxide nanocone array under water bath condition, controlling the pH value of solution at 10-12.    USE - The nano-cone array is used in super-hydrophobic surface, detector, piezoelectric transducer, ultraviolet laser and solar battery.    ADVANTAGE - The method uses simple device and techniques, is easy to operate, is economical, and is suitable for industrialized production. The nano-cone array is highly compact, uniform, and good orientation; and has high flatness, stable performance, and firm combination with the substrate.    DETAILED DESCRIPTION - Preparing highly oriented zinc oxide nano-cone array structure material by wet chemical growth method, comprises using sol-gel method to prepare zinc oxide seed precursor, then coating zinc oxide seed precursor on the substrate to form a thin film, hot processing to obtain nano zinc oxide crystal seed layer, placing the crystal seed layer in a reaction vessel with the substrate surface suspended reversely and immersing in zinc oxide growing solution, and preparing zinc oxide nanocone array under water bath condition, where zinc oxide growth solution comprises potassium hydroxide and zinc nitrate with concentration of 0.10-0.25 mol/l of tetrahydroxozincate ion solution, and controlling the pH value of solution at 10-12.
NOVELTY - The method involves processing the organic matter which is provided in specific proportion in the ratio of 1:5-1:1. The mixed solution is inoculated in a single chamber of a film-free reactor. The single anode chamber is started without biological membrane reactor in the specific state for biological degradation. The cathode materials are recycled. The organic solution is comprised of acetate, phosphate buffer solution, ammonium chloride and proper amount of additive.    USE - Recyclable bio-energy cathode method for degrading organic matter.    ADVANTAGE - The organic matter can be recycled effectively. The processing efficiency can be improved.
NOVELTY - Fluorinated 9,9'-bianthracene derivatives (I) are new.    USE - Fluorinated 9,9'-bianthracene derivatives used in organic electroluminescent devices, organic photovoltaic solar cell (claimed), organic laser, and organic field-effect transistor.    ADVANTAGE - The fluorinated 9,9'-bianthracene derivatives have good thermal stability and luminescent properties, and derivatives are easy to synthesize and absorbs energy effectively and transfers energy to object.    DETAILED DESCRIPTION - Fluorinated 9,9'-bianthracene derivatives of formula (I) are new.    R1-R5=Hydrogen, fluorine or trifluoromethyl group.
NOVELTY - The apparatus (10) has multi-chamber that is equipped with work chamber (12) for etching target object (14). A degassing chamber (18) covers and wraps the work chamber, and protection chamber (22) covers and wraps the degassing chamber. Inside of work chamber, degassing chamber and protection chamber has chamber pressure (P1), degassing pressure (P2) and gas pressure (P3) respectively. Chamber pressure is larger than degassing pressure, so that residual gas is discharged, and gas pressure is larger than degassing pressure so that protection chamber compresses degassing pressure.    USE - Gaseous-phase etching apparatus such as Gaseous-phase wet etching apparatus and gaseous-phase dry etching apparatus for etching target object such as solar cell, semiconductor and flat panel display substrate (all claimed).    ADVANTAGE - The volatilization characteristic of gas containing fluorine can be utilized. The target object can be etched and high safety on use can be maintained with gaseous-phase etching apparatus. Size of the target object can be reduced during etching operation so that manufacturing cost of gaseous-phase etching apparatus can be reduced, and high etching rate can be achieved. Residual gas leakage in the atmosphere can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the gaseous-phase etching apparatus.    Gaseous-phase etching apparatus (10)    Work chamber (12)    Target object (14)    Degassing chamber (18)    Protection chamber (22)    Chamber pressure (P1)    Degassing pressure (P2)    Gas pressure (P3)
NOVELTY - The silicon thin film solar cell has a gallium nitride thin film which is positioned between a transparent conductive film and a silicon thin film. A silicone preventing film is included in a transparent conductive film. The gallium nitride thin film is provided with refractive index between the refractive index of the transparent conductive film and the refractive index of the silicon thin film. The transparent conductive film is AZO transparent conductive film.    USE - Silicon thin film solar cell.    ADVANTAGE - Since single layer can be applied in the silicon thin film solar cell, the cost of the solar cell can be reduced. Since the gallium nitride thin film with high conductivity can be used in the solar cell, the electrical property of the solar cell can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a reflection barrier layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon thin film solar cell.
NOVELTY - The manufacturing apparatus has an etching tank (2) is provided to perform a texture etching by maintaining the etching liquid (1) of the strong alkali type. The semiconductor substrate is immersed in the etching liquid. A filtration portion (6) is provided with the hydrophilic fiber portion to filter the etching liquid. The hydrophilic fiber portion is twined without bonding together in which fibers are intersected to each other.    USE - Apparatus for manufacturing solar cell.    ADVANTAGE - The hydrophilic fiber portion is twined without bonding together in which fibers are intersected to each other, so that the high optical efficiency of the solar cell can be improved. The photoelectric conversion efficiency of the solar cell can be improved. The same-shaped texture can be obtained uniformly with respect to the light-receiving surface side of the semiconductor substrate. The defect of the texture can be suppressed by removing the insoluble product from etching liquid. The solar cell can be manufactured with high productivity.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of the solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the manufacturing apparatus of the solar cell.    Etching liquid (1)    Etching tank (2)    Cassette (3)    Pump (5)    Filtration portion (6)
NOVELTY - A resin composition comprises 100 parts mass polycarbonate resin (A) containing resin (a1) having phenyl acetate group-having structural unit (I), and 3-200 parts mass (meth)acrylate copolymer (B) containing an aromatic (meth)acrylate unit (b1) and methyl methacrylate unit (b2) in a mass ratio of 5-80/95-20, with respect to 100 parts mass polycarbonate resin (A).    USE - Resin composition is used for forming molded product e.g. sheet, motor vehicle upholstery panel, motor vehicle lamp lens, window, casing, game machine component, touchscreen and light guide, protection window, component for display apparatus, cover for display apparatus, component for protector and vehicle mounted component of portable display component (all claimed). Uses include but are not limited to mobile telephone, light guide plate, portable terminal, car, airplane, roofs, garage, arcade, solar cell cover, spectacles, goggles, etc.    ADVANTAGE - The resin composition provides molded product having excellent surface hardness, abrasion resistance, transparency, moldability and mechanical characteristics, and avoids whitening of molded product at the time of molding.    DETAILED DESCRIPTION - A resin composition comprises 100 parts mass polycarbonate resin (A) containing resin (a1) having phenyl acetate group-having structural unit of formula (I), and 3-200 parts mass (meth)acrylate copolymer (B) containing an aromatic (meth)acrylate unit (b1) and methyl methacrylate unit (b2) in a mass ratio of 5-80/95-20, with respect to 100 parts mass polycarbonate resin (A). An INDEPENDENT CLAIM is included for molded product, which is formed by inject-molding the resin composition.
NOVELTY - Producing hydrogen gas, comprises (P1) classifying iron containing raw material into an uniform size, (P2) removing surface impurities by heat treating the classified raw materials under reducing atmosphere, (P3) obtaining byproduct gas by dissolving the treated raw materials in hydrogen gas containing acid solution, (P4) removing acid and water soluble impurities from the byproduct gas, (P5) removing moisture and dust impurities from the byproduct gas, and obtaining a highly pure hydrogen by continuously removing the impurities of the byproduct gas using pressure swing adsorption.    USE - The hydrogen gas is useful as an energy source for hydrogen fuel cell power plants.    ADVANTAGE - The method makes use of industrial waste iron containing raw material, is environmentally friendly and economical.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic process flow for producing hydrogen gas (Drawing includes non-English language text).    Classifying step (P1)    Surface impurities removing step (P2)    Byproduct gas obtaining step (P3)    Acid and water soluble impurities removing step (P4)    Moisture and dust impurities removing step (P5)
NOVELTY - The cleaning method involves producing fluorine in at least one electrolytic cell, and the absolute pressure of fluorine in the electrolytic cell is less than or equal to 1.1 bar. The absolute pressure of fluorine delivered to at least one chamber is less than or equal to 0.85 bar. The fluorine contains greater than or equal to 1 wt.% hydrogen fluoride, and fluorine is less than or equal to 2 wt.% of hydrogen fluoride.    USE - Cleaning method of chamber e.g. chemical vapor deposition (CVD) or physical vapor deposition (PVD) chamber, used in manufacture of various devices, using fluorine. Uses include but are not limited to semiconductors, electro mechanical devices, solar cells and thin film transistors (TFTs).    ADVANTAGE - Provide a simple, economic, reliable and safe process in providing fluorine and use it chamber cleaning agent.
NOVELTY - A 3,4-bis(carbamoyloxy)thiophene (I) or (II), is new.    USE - New 3,4-bis(carbamoyloxy)thiophene is used for copolymer for reaction liquid used in formation of electroconductive coating (all claimed) and electroconductive material. Uses include but are not limited to antistatic agent, condenser, solar cell, organic electroluminescent element, capacitor, and sensor.    ADVANTAGE - The copolymer containing repeating unit derived from 3,4-bis(carbamoyloxy) thiophene has high resistance value at high temperature.    DETAILED DESCRIPTION - A 3,4-bis(carbamoyloxy)thiophene of formula (I) or (II), is new.    R1,R2=1-12C alkyl;    R3-R8=H or 1-3C hydrocarbyl;and    or R4+R5,R7+R8=cyclic structure.    INDEPENDENT CLAIMS are included for the following:    (1) copolymer, which comprises a repeating unit (a) derived from 3,4-bis(carbamoyloxy)thiophene and repeating unit (b) derived from thiophene monomer;    (2) manufacture of copolymer, which involves oxidatively polymerizing 3,4-bis(carbamoyloxy)thiophene and thiophene monomer; and    (3) manufacture of electroconductive coating, which involves coating reaction liquid containing copolymer on a base material, and it drying.
NOVELTY - Manufacture of indium-zinc oxide-type sputtering target involves granulating (ST103) mixed powder which contains indium oxide powder and/or zinc oxide powder to a average particle diameter of 500 mu m or less, molding under 100 Mpa or more, and baking (ST105) at 1250-1550 degrees C.    USE - Manufacture of indium-zinc oxide-type sputtering target used for display and thin film solar cell.    ADVANTAGE - The method provides indium-zinc oxide-type sputtering target having improved dispersibility.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of indium-zinc oxide-type sputtering target. (Drawing includes non-English language text)    Measurement process (ST101)    Pulverization and mixing process (ST102)    Granulation process (ST103)    Formation process (ST104)    Baking process (ST105)    Manufacturing process (ST106)
NOVELTY - An aluminum material comprises aluminum base material, and composite-plating film which codeposits aluminum and an inorganic fine particle, on the surface of the aluminum base material.    USE - Aluminum material is used for heat exchanger, back surface cooler of solar cell and cooler (all claimed).    ADVANTAGE - The aluminum material has suppressed generation of electric corrosion, and high hydrophilic property.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) surface treatment method of aluminum material, which involves immersing aluminum base material in the electrolyte in which aluminum salt and an inorganic fine particle are mixed, codepositing aluminum and an inorganic fine particle;    (2) heat exchanger, which contains aluminum material;    (3) back surface cooler of solar cell; and    (4) cooler, which is formed with the aluminum material.
NOVELTY - The battery (10a) has an electric power generation element (20) provided with a positive electrode (21), a negative electrode (22) and separators (23) laminated repeatedly. An exterior body (30) seals inner side of the electric power generation element, where an elastic body (40a) is arranged between a corner of the electric power generation element and the exterior body. A part of the elastic body contacts an outermost layer of the generation element, where the outermost layer protrudes the exterior body side more than the outermost layer along lamination direction.    USE - Rectangular flat laminate type battery i.e. lithium ion secondary battery, for use as driving power supply and auxiliary power supply in a vehicle such as electric vehicle (EV), motor vehicle, hybrid EV (HEV), fuel-cell vehicle and hybrid fuel cell EV. Can also be used as a bipolar battery.    ADVANTAGE - The exterior body seals the inner side of the electric power generation element by arranging the elastic body between the corner of the electric power generation element and the exterior body, so that damage to the exterior body caused by vibration and impact is avoided while reducing weight of the battery.    DESCRIPTION OF DRAWING(S) - The drawings show a schematic view and sectional views of a rectangular flat laminate type battery.    Rectangular flat laminate type battery (10a)    Electric power generation element (20)    Positive electrode (21)    Negative electrode (22)    Separators (23)    Exterior body (30)    Elastic body (40a)
NOVELTY - The cell (1) has an electrode film arrangement (3) and an elastic element (2) arranged in a cell housing (5). The electrode film arrangement is pressed against a housing wall (5.1) of the cell housing by the elastic element that is designed as a fluid-tight gas filled hollow body (6). The elastic element is made of a plastic material and a closed-pore foam material, where the elastic element corresponds to the planar expansion anodes and/or cathodes of the electrode film arrangement. The elastic element is arranged in the electrode film arrangement.    USE - Single cell i.e. lithium ion cell, for use in a battery (claimed) e.g. electrochemical energy storage device and/or energy converter, and elliptic column-type non-aqueous electrolyte battery, for a vehicle e.g. hybrid vehicle, fuel cell vehicle or electric car.    ADVANTAGE - The electrode film arrangement is pressed against the housing wall of the cell housing by the elastic element that is designed as the fluid-tight gas filled hollow body, thus allowing thickness alterations of the electrode film arrangement to be compensated in simple and inexpensive manner, allowing the cell to be installed in a space saving manner and designed in simple and compact manner, avoiding the risk of damage for the elastic element, and ensuring prolonged service life of the cell. The cell is designed such that the overall weight and size of the battery are reduced with an enhanced function of the battery.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a battery    (2) a method for manufacturing a single cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic exploded perspective view of a single cell for a battery.    Single cell (1)    Elastic element (2)    Electrode film arrangement (3)    Cell housing (5)    Housing wall (5.1)    Fluid-tight gas filled hollow body (6)
NOVELTY - A core-shell structured composite material comprises platinum coated on surface of tungsten carbide core in which composite material has particle diameter of 50-150 nm.    USE - A core-shell structured composite material for electrocatalyst used for methanol fuel cells (claimed).    ADVANTAGE - Core-shell structured composite material has high catalytic activity, good thermal stability, and improved anti-poisoning capacity, catalytic conversion efficiency, and service life, and preparation is simple and low-cost and reduces raw material consumption.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of core-shell structured composite material which involves granulating ammonium metatungstate and copper nitrate mixed solution by spray-drying, reducing and carbonizing by performing temperature-programmed solid reaction under hydrogen-rich atmosphere, cooling to obtain tungsten carbide/copper composite material, placing in platinum-containing compound solution, and performing substitution reaction.
NOVELTY - The cell has a germanium substrate formed with a gallium arsenic buffer layer. An aluminum gallium arsenic back field layer is formed on a gallium arsenic substrate that is formed with an aluminum gallium arsenic window layer and a gallium arsenic contact layer. A reflecting layer is formed on a composite structure of the germanium substrate by MOCVD process. Thickness of the germanium substrate is 15-200 mm, where thickness of the gallium arsenic buffer layer is 0.3-1.5 microns.    USE - Composite-type DBR germanium-based gallium arsenic thin film single-junction solar cell.    ADVANTAGE - The cell has improved conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a composite-type DBR germanium-based gallium arsenic thin film single-junction solar cell manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a composite-type DBR germanium-based gallium arsenic thin film single-junction solar cell.
NOVELTY - The method involves processing a silicon sheet surface structure. A phosphorus diffusion process is performed. A boron diffusion process is performed. PECVD is deposited on the processed silicon sheet surface structure. A positive and negative double-side silicon nitride deposition process is performed on the processed silicon sheet surface structure. A sintering process is performed at temperature of about 80 degrees Celsius to 90 degrees Celsius to prepare a double-surface single crystal silicon solar battery.    USE - Method for manufacturing a double-surface single crystal silicon solar battery.    ADVANTAGE - The method enables improving conversion efficiency of a solar battery and achieving 25-30 wt.% total efficiency of the double-surface single crystal silicon solar battery.
NOVELTY - Preparation of copper indium gallium selenide (CIGS) thin-film solar cell absorbent comprises sputtering first copper-depleted in CIGS preset layer to obtain copper-enriched CIGS target, sputtering into copper-depleted in CIGS preset layer, and sputtering with second depleted copper-poor in CIGS preset layer; and heating. The molar ratio of copper, indium, and gallium atoms in copper-enriched CIGS target is 0.5-1. The molar ratio of copper, indium, and gallium atoms in copper-poor CIGS target is 1-1.5.    USE - Method for preparation of copper indium gallium selenide thin-film solar cell absorbent (claimed).    ADVANTAGE - The absorbent has good quality The method is simple, has low energy consumption and pollution, and reduces production costs.
NOVELTY - The method involves forming a silicon wafer and a buffer layer on a battery emitter junction. A hot growing oxide layer is formed on a surface of the silicon wafer and the passivating emitter junction, where the buffer layer is made of silicon dioxide. Thickness of the buffer layer is 5-20 nm. A pentavalent element is formed on a doped ion implantation to form an N-type and a P-type of the emitter junction. An ion injection adulteration silicon chip is arranged in nitrogen atmosphere according to annealing temperature, which is maintained with temperature at 800-900 degrees centigrade.    USE - Method for preparing crystalline silicon solar cell emitter junction.    ADVANTAGE - The method avoids ion implantation caused by crystal lattice damage, and enables reducing channel effect and improving hot annealing process of passivation emitter junction quality, inhibiting the area leakage current, battery open circuit voltage and reverse current and battery performance.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a crystalline silicon solar cell emitter junction.'(Drawing includes non-English language text)'
NOVELTY - A plate-type rear contact solar cell is prepared by placing graphite frame (1) on silicon chip (2) and air hole (3), covering rear side with baffle, feeding gas through silicon nitride thin film air hole, covering uniformly, and forming point contact.    USE - Method for preparing plate-type rear contact solar cell (claimed).    ADVANTAGE - The process skips laser drilling process, greatly improves solar battery open-circuit voltage, and increases conversion efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of plate-type rear contact solar cell.    Graphite frame (1)    Silicon chip (2)    Air hole (3)
NOVELTY - A nitrogen dioxide nanohorns-graphite nano composite contains 1-3 mass% nitrogen dioxide nanohorns, and graphite at mass ratio nitrogen dioxide nanohorns:graphite of 1:0.02-0.6.    USE - Nitrogen dioxide nanohorns-graphite nano composite for fuel cell catalyst (claimed).    ADVANTAGE - The composite has excellent electro-catalytic activity, and stability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:(1) preparation of nitrogen dioxide nanohorns-graphite nano composite which involves adding 0.1-90% water to direct current (DC) arc synthesizer, operating at 1x 104-9x 104 Pa, 80-120 A, and 473-1073 degrees C for 0.1-100 hours, mixing nitrogen-containing dry air, or nitrogen and carbon monoxide, oxygen, or carbon dioxide mixture, and anodic or cathodic graphite rod to obtain solid product, and heating in air, or inert gas and oxygen mixture;(2) preparation of catalyst involves mixing alcohol solution of alkali metal or alkaline-earth metal hydroxide, or alcohol and water solution to obtain liquid A, dissolving transition metal element soluble salt, or acid to obtain transition metal compound solution, dispersing nano composite in water-miscible organic solvent, or solvent and water mixed solution to obtain suspension B, mixing liquid A and suspension B, precipitating, and separating under reduced pressure or vacuum and inert atmosphere.
NOVELTY - Aqueous cleaning agent comprises 0.1-0.5 wt.% surfactant, 1-10 wt.% ethanol, 0.001-0.05 wt.% rosin and deionized water.    USE - Aqueous cleaning agent used for removing solar cell module glue residue (claimed).    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of aqueous cleaning agent comprising mixing deionized water and surfactant, stirring to obtain milky white solution, adding rosin in ethanol, stirring to dissolve, adding the milky white solution to obtain transparent solution and stirring for 5 minutes.
NOVELTY - The utility model claims one suitable for building integrated photovoltaic's crystal silicon dual-glass component, comprising a glass and a crystalline silicon solar cell, said crystal silicon solar cell is clamped between the two pieces of glass and laminated by an adhesive as a whole, said crystal silicon solar cell is composed of multiple solar battery plate grid, said grid composed of multiple arranged solar battery sheet and the welding strip taking up the electric serial-to-parallel connecting strip's battery. The utility model has high light transmittance and high conversion efficiency, simple technology, but also has uniform light assembly, it has good's appearance effect of the double-glass photovoltaic building more beautiful, so as to obtain commercial application's larger scale the building integrated photovoltaic field.
NOVELTY - The utility model claims one based on stone outer wall's CdTe thin film solar cell system, stone external wall panel, wherein said stone outer wall outer surface is covered with CdTe thin film solar cell, CdTe thin film solar cell with the stone outer wall outer surface is coated with adhesive layer. The whole system is rational in design and structure, smart design, the CdTe thin film solar cell with the insulating stone is combined as a whole, forming one new energy environment-friendly stone, monomer used is assembled building external vertical surface. CdTe thin film solar cell with high light absorption, the absorption coefficient is as high as 104cm-1 or more in the visible light range, 95%'s photon can be absorbed in the range of 1 (mu) m thick's absorption layer. In practical application, the large's outer wall of building to realize light energy, summer season effectively reduce indoor temperature energy-saving and environment-friendly. The patent technology has good practical effect, and it is easy to popularize.
NOVELTY - The semiconductor device (1) has several quantum dot layers (31) e.g. planar semiconductor film that are formed on a main surface of a substrate (10). The quantum dot layer is provided with a quantum dot (31a). The quantum dot of quantum dot layers is stacked, such that the lamination direction of quantum dot is inclined with respect to the vertical direction of the main surface of the substrate. The height of quantum dot laminated portion in lamination direction is made larger than the length of quantum dot laminated portion in direction perpendicular to lamination direction.    USE - Semiconductor device used as solar cell (claimed), semiconductor laser, optical amplifier, optical repeater, optical receiver and photodetector e.g. infrared sensor and photoelectric conversion element.    ADVANTAGE - Since the lamination direction of quantum dot is inclined with respect to the vertical direction of main surface of substrate, the optical response characteristic of semiconductor device can be improved. Thus, the efficiency of semiconductor device can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the semiconductor device.    Semiconductor device (1)    Substrate (10)    Buffer layer (20)    Quantum dot layers (31)    Quantum dot (31a)
NOVELTY - A solar cell module consists of an upper substrate, a lower substrate, and a nanostructure layer which is capable of reversible conversion of superhydrophilic-superhydrophobic by optical irradiation and contains a photoresponsive organic compound.    USE - Solar cell module (claimed).    ADVANTAGE - The solar cell module has high aperture ratio.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of solar cell module.
NOVELTY - Manufacture of metal oxide-conductive carbon composite involves introducing a liquid reaction mixture containing water, a compound containing a transition metal chosen from manganese, iron, cobalt and nickel, and a conductive carbon powder into a rotatable reactor, rotating the reactor, dispersing obtained nuclei of hydroxide of transition metal and the conductive carbon powder, simultaneously loading the hydroxide of the transition metal onto the conductive carbon powder, heating to convert the hydroxide loaded onto the conductive carbon powder into oxide nanoparticles.    USE - Manufacture of metal oxide-conductive carbon composite. Uses include but are not limited to fuel cell, secondary battery, electrochemical capacitor and antistatic material.    ADVANTAGE - During manufacture of metal oxide-conductive carbon composite, metal oxide nanoparticles having evenness of size are efficiently and highly dispersedly adhered to conductive carbon powder.    DETAILED DESCRIPTION - Manufacture of metal oxide-conductive carbon composite involves introducing a liquid reaction mixture containing water, a compound containing a transition metal chosen from manganese, iron, cobalt and nickel, and a conductive carbon powder and having pH of 9-11 into a rotatable reactor, rotating the reactor to apply shearing stress and centrifugal force to the liquid reaction mixture to produce nuclei of hydroxide of the transition metal, dispersing the obtained nuclei of hydroxide of the transition metal and the conductive carbon powder, simultaneously loading the hydroxide of the transition metal onto the conductive carbon powder, heating the conductive carbon powder loaded with the hydroxide of the transition metal to convert the hydroxide loaded onto the conductive carbon powder into oxide nanoparticles.
NOVELTY - Sludge collection (S3) involves recovering silicon from sludge containing powder of silicon generated when processing silicon in water or aqueous solution, by forming (BB) a stable oxide film by supplying a gas containing an oxygen component to fresh surface of powder generated by processing of silicon in water or aqueous solution.    USE - Collection of sludge generated during cutting, polishing, dicing or back-grinding process in manufacture of wafer used for semiconductor products and solar cells.    ADVANTAGE - The method forms a stable oxide film, thus suppressing oxidation of powder of matter to be treated present in sludge, and readily recovers a large quantity of matter to be treated.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for granular material of recovered silicon.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the sludge collection method. (Drawing includes non-English language text)    Formation of stable oxide film (BB)    Production of silicon ingot (S1)    Processing of silicon ingot (S2)    Sludge collection process (S3)    Melting of recovered silicon (S4)
NOVELTY - Producing a nanostructured carbon-based material, comprises: (a) preparing a suspension by mixing 0.5-80 wt.% of carbon compound comprising graphite or graphitic materials with 0.001-100 wt.% of exfoliating agents that are pure or in solution, where exfoliating agents are constituted by oligomers or polymers comprising 1-1000 (preferably 3-20) repeating units comprising at least one ether group, preferably at least one ethoxy group, and at least one optionally substituted aromatic group; and (b) sonicating the obtained suspension and/or performing mechanical milling of the obtained suspension.    USE - The method is useful for producing a nanostructured carbon-based material, which is useful for producing conductive inks, conductive films, additives for plastic materials, sensors for detecting chemical substances both in a gas and in a liquid, transistors, diodes, optical modulators, transparent conductive materials, solar cells, batteries, ultracapacitors, support for medical or biomedical active ingredients, antibacterial, support capable of differentiating the molecular growth of some cells, protective coatings, flexible electronics, composites or fillers for composites (claimed).    ADVANTAGE - The method: utilizes the exfoliating agents, which provide the nanostructured carbon-based material exhibiting high yield and quality, and high length/thickness ratio and electrical conductivity; and facilitates an easy removal of the compounds used for solid exfoliation.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a nanostructured carbon-based material obtained by the method.
NOVELTY - The method comprises: molding a feedstock composition including a hollow particle and white inorganic particle that are immiscibile in a polyester resin to obtain an undrawn sheet; cooling the shaped undrawn sheet; expanding the cooled undrawn sheet to obtain a film; biaxially expanding the film; and heat-treating the biaxially expanded film. A heat-resistance temperature of the hollow particle is 240-290 degrees C. A particle diameter of the hollow particle is 0.5-5 mu m. An average particle diameter of the white inorganic particle is 0.1-3 mu m.    USE - The method is useful for manufacturing a white polyester reflective film that is useful in a reflective sheet (all claimed) used in a backlight of an image display apparatus, a lamp reflector, a lighting equipment, a light sign board, and a solar cell.    ADVANTAGE - The white polyester reflective film has good stability and optical property, and can be manufactured without any breakage and with high flexibility and productivity.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a white polyester reflective film.
NOVELTY - A compound semiconductor device has a substrate (1) having primary doped region(s) (11) and secondary doped region(s) (12), and a semiconductor layer (2) disposed on substrate.    USE - Compound semiconductor device e.g. light-emitting diode, photodetector, solar cell and power transistor.    ADVANTAGE - The compound semiconductor device has excellent light-emitting efficiency, reliability and durability, and is manufactured by simple process with high yield. The defects caused by secondary growth are reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of compound semiconductor device.    Substrate (1)    Semiconductor layer (2)    Extension components (6)    Doped regions (11, 12)    Rod structure (21)
NOVELTY - Manufacture of interface passivation structure (1) having a p-type silicon substrate (31), silica film (36a) chemically-deposited in contact with the substrate on top, and silicon nitride film (36b) formed in contact with the silica film involves depositing the silicon nitride film in contact with silica film on top when substrate temperature is more than 220 degrees C to less than 380 degrees C.    USE - Manufacture of interface passivation structure used for photoelectric conversion element (claimed) e.g. solar cell.    ADVANTAGE - The silicon nitride film in the interface passivation structure has high passivation characteristics.    DETAILED DESCRIPTION - Manufacture of interface passivation structure having a p-type silicon substrate, silica film chemically-deposited in contact with the substrate on top, and silicon nitride (SiNx, where x is not defined) film formed in contact with the silica film involves depositing the silicon nitride film in contact with silica film on top when substrate temperature is more than 220 degrees C to less than 380 degrees C.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the interface passivation structure. (Drawing includes non-English language text)    Interface passivation structure (1)    Silicon substrate (31)    Passivation film (36)    Silica film (36a)    Silicon nitride film (36b)
NOVELTY - A photocatalyst for the generation of diatomic hydrogen from a hydrogen containing precursor under the influence of actinic radiation, comprises a semiconductor support and a gold and palladium alloy on the semiconductor support.    USE - As photocatalyst for the generation of diatomic hydrogen from a hydrogen containing precursor (claimed) used as an energy carrier and fuel in internal combustion engines, gas turbines, and fuel cells.    ADVANTAGE - The photocatalyst is cost ineffective; provides a good yield in terms of diatomic hydrogen generation; generates diatomic hydrogen from a hydrogen containing precursor in its liquid state; and reduces reverse reaction of hydrogen and oxygen to water during photolysis.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) preparing a photocatalyst involving providing a semiconductor support and depositing gold and palladium alloy on the semiconductor support;    (2) generating diatomic hydrogen from a hydrogen containing precursor, involving contacting the photocatalyst with the hydrogen containing precursor while exposing the photocatalyst to actinic radiation; and    (3) photolysis system for the generation of diatomic hydrogen comprising a reaction zone containing the photocatalyst.
NOVELTY - A cadmium ternary sulfur semiconductor quantum dot tellurium sensitizer comprises tellurium ion soluble salt and soluble salt of sulfur ion at a mol concentration ratio of 1:1-1:1000, and cadmium ternary sulfur semiconductor quantum dot association as sensitizer assembled quantum dot sensitized solar battery.    USE - Cadmium ternary sulfur semiconductor quantum dot tellurium sensitizer for use in sensitized solar cell.    ADVANTAGE - The sensitizer provides the cell with improved photoelectric conversion efficiency, improved transmission path of photo-generated electron, increased short circuit current density, increased open-circuit voltage and improved energy conversion efficiency, and is simple and inexpensive to prepare.
NOVELTY - A resin composition comprises diene polymer, and 5-30 %mass softener with respect to total mass of resin composition.    USE - Resin composition is used for resin sheet for organic electroluminescent element for image display apparatus (all claimed). Uses include but are not limited to organic electroluminescent display, organic electroluminescent illumination, organic semiconductor, light emitting diode, liquid crystal display and organic solar cell.    ADVANTAGE - The resin composition has excellent transparency, flexibility, water vapor barrier property, adhesiveness, and provides image display apparatus having excellent visibility and without generation of dark spots.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for resin sheet (1), which has sealing layer (3) obtained using resin composition.    DESCRIPTION OF DRAWING(S) - The drawing shows sectional-view of structure of resin sheet.    Resin sheet (1)    Base material sheet (2)    Sealing layer (3)    Release film (4)
NOVELTY - The method involves forming (S210) a titanium dioxide layer in an upper portion of a solar cell in a spin coating mode by using titanium dioxide solution. A zinc oxide layer is formed (S230) in an upper portion of the titanium dioxide layer. A zinc oxide nano rod is formed (S250) in an upper portion of the zinc oxide layer for obtaining longitudinal refractive index value. A magnesium oxide layer (S270) is formed on a surface of the zinc oxide nano rod. Titanium dioxide solution is added on a top surface of the solar cell. Thickness of the titanium dioxide layer is in specific range.    USE - Method for forming an anti-reflection layer of a solar cell.    ADVANTAGE - The method enables forming the zinc oxide layer on the upper portion of the solar cell so as to avoid reflection diffusion problem of sunlight and generation of interference problem on a surface of the solar cell, thus improving generation of photoelectron effect on an active layer of the solar cell and active layer generation efficiency.    DETAILED DESCRIPTION - The zinc oxide nano rod is formed by reacting solution through mixing of zinc nitrate and hexamethylenetetramine to constant rate.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for forming an anti-reflection layer of a solar cell.'(Drawing includes non-English language text)'    Step for forming titanium dioxide layer in upper portion of solar cell (S210)    Step for forming zinc oxide layer in upper portion of titanium dioxide layer (S230)    Step for forming zinc oxide nano rod in upper portion of zinc oxide layer (S250)    Step for forming a magnesium oxide layer on surface of zinc oxide nano rod (S270)
NOVELTY - A parallel line pattern (1) has parallel lines (10) containing an electroconductive material formed on a base material (2) and separated by movement of a fluid.    USE - Parallel line pattern is used for base material with transparent conductive film for device for electronic apparatus (all claimed). Uses include but are not limited to liquid crystal display, plasma display, organic electroluminescent field emission, touchscreen, mobile telephone, electronic paper, solar cells, electroluminescent light control element, smart phone, etc.    ADVANTAGE - The thin parallel line pattern has excellent transparency and stable resistance value.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) base material with transparent conductive film; and    (2) formation of parallel line pattern.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of base material.    Parallel line pattern (1)    Base material (2)    Parallel lines (10)    Line segment (11,12)    Thin film portion (13)
NOVELTY - A polycarbonate resin molded product is covered with a cured layer of energy ray-curable acrylic resin composition. The energy at the puncture point on surface of polycarbonate resin molded product measured by high-speed side impact test JIS K7211 is 50 J or more. The polycarbonate resin molded product which has surface hardness measured by JIS K5600 is more than HB (hard black).    USE - Polycarbonate resin molded product e.g. lamp lens, upholstery panel, casing and window (claimed) for motor vehicle, electrical/electronic device and residence. Uses include but are not limited to window glass of car, window glass for construction machine, sunroof, roof panel, spectacles, goggles, solar cell cover, camera, game machine, helmet, etc.    ADVANTAGE - The polycarbonate resin molded product has excellent mechanical characteristics, surface hardness, surface impact strength, thermal stability, hydrolysis resistance and weather resistance.
NOVELTY - The method comprises plasma coating a surface (4) of a substrate (2) with a preparation layer (12) using a first process gas containing base element in a gaseous compound so that the preparation layer includes the base element, and plasma treating the preparation layer using a second process gas containing molecular oxygen. The first process gas contains a gaseous precursor, and a carrier gas. The element includes a metal or a semiconductor. The second process gas is air. The substrate is made of a metallic, semiconducting, ceramic or organic material, and includes micro- or nanoparticles.    USE - The method is useful for applying an oxide layer made of an oxide of a base element to a surface of a substrate (claimed), where the oxide layer is useful as dielectric sheets for solar cell and for FETs in microelectronics, hydrophobic passivation films and anti-reflective coatings on glasses or organic-functional layers for medical implant workpieces.    ADVANTAGE - The method allows safe application of oxide layer to the substrate with high quality and purity in an economical manner thus enhancing tensile strength, elasticity and coefficient of thermal expansion of the substrate.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a device for applying an oxide layer made of an oxide of a base element to a surface of a substrate.    Substrate (2)    Surface (4)    Oxide layer (6)    First plasma layer (10)    Preparation layer. (12)
NOVELTY - The invention relates to a high conductive tinned copper strip with a Cu-Zn intermetallic phase. It applies for a wiring structure of a photovoltaic module of a solar cell. The photovoltaic module of the solar cell is formed by a plurality of solar panels connected to the tinned copper strips in series. It is characterized by the Cu-Zn intermetallic phase containing Cu5Zn8 and CuZn5 on the interface between a surface of the copper strip and a tin coating, and the tin coating is calculated on a total composition 100 weight percent basis, wherein the content of the Zn metal is between 0.01wt% and 93wt%. Accordingly, the tinned copper strip of the present application is provided with excellent conductivity (more than 25%) to reduce power loss during the transmission through solar panels, so as to achieve the efficiency of enhancing the photoelectric conversion efficiency of the solar photovoltaic module.
NOVELTY - The present invention provides a surface treatment of solar cells. First, a semiconductor substrate having a first phase material thereon is provided. A phase change process is performed to change the first phase material into a second phase material. An etching process is carried out to remove the second phase material.
NOVELTY - Pressure sensor comprises: substrate; sensor thin film transistor (TFT) (30) disposed on substrate and comprising gate insulating layer, where gate insulating layer comprises organic matrix in which piezoelectric inorganic nano-particles are dispersed; power unit (70) configured to apply an alternating current (AC) signal to gate of sensor TFT; and pressure sensing unit (100) configured to obtain remnant polarization value based on drain current that is generated in response to AC signal and detected by sensor TFT, and to sense pressure based on remnant polarization value.    USE - The pressure sensor is useful in flexible or stretchable electronic components, large-sized sensors, actuators, memories, solar batteries, and electronic devices.    ADVANTAGE - The pressure sensor exhibits high flexibility and processability at low temperatures, and improved piezoelectric coefficient characteristic, is mechanically reliable, and exhibits excellent electric characteristics.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a pressure sensing method comprising: applying an alternating current (AC) signal to a gate of a sensor thin film transistor (TFT) comprising a piezoelectric gate insulating layer (33); detecting a drain current from the sensor TFT, where the drain current is generated in response to the AC signal; obtaining a renmant polarization value based on the drain current; and sensing a pressure based on the renmant polarization value.    DESCRIPTION OF DRAWING(S) - The figure illustrates schematic perspective view of the sensor thin film transistor of a pressure sensor.    Sensor thin film transistor (30)    Gate electrode (31)    Piezoelectric gate insulating layer (33)    Power unit (70)    Pressure sensing unit (100)
NOVELTY - The method involves providing solar cell device having first side (11) for capturing incident light and second side (12) for assembly to carrier. The optically transparent structure (22) of insulating material is arranged on top of passivation layer on one of sides of solar cell device. The polymer material is patterned to form aperture to first contact region (13). The contact structures (41-43) of conducting material are provided in aperture by performing electrochemical deposition. The solar cell device is made of cadmium telluride and copper indium gallium selenide.    USE - Method for manufacturing solar cell (claimed) such as thin film type solar cell and metal wrap through (MWT) type solar cell.    ADVANTAGE - The cost of solar cells using electrochemical deposition can be reduced due to a limited number of process steps, and the manufacturing artifacts such as residues and/or ghost plating can be prevented. The solar cell with electrochemically deposited conductors can be provided without manufacturing artifacts such as residues and/or ghost plating.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a solar cell; and    (2) a manufacturing equipment.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the process for manufacturing solar cell.    Semiconductor portion (10)    Sides of solar cell device (11,12)    Contact region of solar cell device (13)    Transparent structure (22)    Contact structures (41-43)
NOVELTY - Catalyst comprises: a substrate comprising a material consisting of iridium or ruthenium; and a mixed-metal coating on the substrate comprising platinum and at least one material consisting of gold, palladium, iridium, ruthenium, rhodium, rhenium or osmium.    USE - The catalyst is useful as an anode for generating electricity in a fuel cell (all claimed).    ADVANTAGE - The catalyst: is resistant to carbon monoxide adulteration; exhibits high reactivity and low over-potential for carbon monoxide-stripping compared to pure platinum(111); and is cost effective.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for generating electricity in a fuel cell, comprising: obtaining a fuel cell comprising an anode and a cathode; and exposing the anode to hydrogen gas and thus generating electricity, where the anode comprises the catalyst.
NOVELTY - Anion exchange membrane comprises a polymer substrate comprising a graft chain having an alkyl substituted imidazolium salt as an ion exchange group, where the graft chain is formed by N-alkylating an imidazole site of a polymer containing an N-vinylimidazole derivative as a polymerization unit with an alkyl halide with a carbon number of greater than 3.    USE - The anion exchange membrane is useful in a solid polymer electrolyte fuel cell.    ADVANTAGE - The anion exchange membrane exhibits favorable conductivity, water uptake property and alkaline durability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for producing the anion exchange membrane, comprising graft-polymerizing an N-vinylimidazole derivative with a polymer substrate to introduce a polymer of the N-vinylimidazole derivative as a graft chain into the polymer substrate, and N-alkylating an imidazole site of the graft chain with an alkyl halide with a carbon number of greater than 3 to form an alkyl substituted imidazolium salt.
NOVELTY - A transparent conductor (1) has a base material (11), a transparent conductive layer (12) containing metal filler and a light transmissive layer containing optical absorption material.    USE - Transparent conductor is used for input device for display apparatus (all claimed) for electronic device e.g. television, notebook-type personal computer, information input device, mobile telephone and tablet-type computer. Uses include but are not limited to touch screen, flat panel display, solar cell, electromagnetic interference compound and optical filter.    ADVANTAGE - The transparent conductor has high contrast and suppressed increase in sheet resistance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) input device; and    (2) display apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the transparent conductor.    Transparent conductor (1)    Base material (11)    Transparent conductive layer (12)    Black-floating prevention layer (13)
NOVELTY - The layer (104) has main portion which is provided with a carbon nanotube group (111G) comprising vertically aligned carbon nanotubes (111). An N-type dopant (113) is positioned in one end side of the carbon nanotubes while including P-type dopant (114) in other end side of the carbon nanotubes. The element with larger electronegativity than a carbon nanotube is used as a P-type dopant while using the element whose electronegativity is smaller than carbon nanotube as the N-type dopant.    USE - Electric power generation layer of solar cell (claimed).    ADVANTAGE - Since the n-type dopant and the p-type dopant are positioned in the state reliably separated into both sides through the atom or molecule, the power generating efficiency can be improved. The durability of the electric power generation layer can be improved.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) the manufacturing method of electric power generation layer; and    (2) the solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the solar cell. (Drawing includes non-English language text)    Electric power generation layer (104)    Carbon nanotubes (111)    Carbon nanotube group (111G)    N-type dopant (113)    P-type dopant (114)
NOVELTY - Concentration of metallic compound involves reducing solid metallic compound (a) chosen from gallium, indium, germanium, tellurium, and mixture of solid metallic compound (a) which contains the metal chosen from group which consists of cesium with metal content rate (A), and obtaining gas metallic compound, and then oxidizing the gas metallic compound and collecting solid metallic compound (b) as with metal content rate (B) higher than metal content rate (A).    USE - Concentration of metallic compound e.g. gallium (claimed) from used electronic components e.g. copper indium gallium selenide-type solar cell and light-emitting diode, and ore extracted from mines.    ADVANTAGE - The method efficiently and economcially concentrates metallic compounds.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for apparatus for concentrating metallic compound.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic block diagram of apparatus for concentrating metallic compound.    Reaction tube (10)    Top stopper (11)    Lower stopper (13)    Lower glass tube (14)    Heater (15)
NOVELTY - A nano-wire-carbon nano-tube hybrid film (100) comprises a substrate (110), a nanowire layer (120) formed on the substrate and including a metal nanowire as main component, a carbon nanotube layer (130) formed on the nanowire layer, including a carbon nanotube as a main component, and having a mesh structure with the nanowire layer, and a top coating layer (140) formed on the carbon nanotube layer and having an insulating property.    USE - Nanowire-carbon nanotube hybrid film. Uses include but are not limited to light-receiving elements of liquid crystal display device, light-emitting diode, organic electroluminescent diode, touch panel and solar cell.    ADVANTAGE - The nanowire-carbon nanotube hybrid film has excellent permeability and conductivity, and improved durability and flexibility.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of nano-wire-carbon nano-tube hybrid film.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic cross-sectional view of nanowire-carbon nanotube hybrid film.    Nanowire-carbon nanotube hybrid film (100)    Substrate (110)    Nanowire layer (120)    Carbon nanotube layer (130)    Top coating layer (140)
NOVELTY - A composition (C1) comprises at least one compound selected from hydantoin and its derivative, at least one alkoxylated glycol and at least one alkaline compound.    USE - For texturing monocrystalline semiconductor substrates (claimed) for photovoltaic devices, including semiconductors in the manufacture of solar cells.    ADVANTAGE - The composition inhibits or reduces formation of flat areas between pyramid structures on the textured monocrystalline semiconductors to increase incident light absorption and improve the efficiency of the devices; reduces incident light reflectance; and improves light absorption of the wafers, and efficiency of the texturing method.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for texturing monocrystalline semiconductor substrates in alkaline baths involving contacting the monocrystalline semiconductor substrate with the composition (C1) to anisotropically texture the monocrystalline semiconductor substrate.
NOVELTY - The method comprises adding a solid acid catalyst to sulfuric acid to prepare a dopant, adding a volatile agent to the dopant and then volatilizing, and providing the mixture to a silicone mold. The dopant is n-type dopant or p-type dopant. A concentration of the sulfuric acid is 90-98%. The sulfuric acid is present in an amount of 0.1-1000 milliliter in 1 g of the dopant.    USE - The method is useful for manufacturing silicon single crystal (claimed) that is useful in a semiconductor device or a solar cell.    ADVANTAGE - The method is capable of economically manufacturing the silicon single crystal with high purity and volatility.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a silicon single crystal melt solution.
NOVELTY - A solar cell has indium phosphide thin film deposited on molybdenum or tungsten thin film on metal substrate made from metal foil, aluminum, molybdenum or tungsten. The indium phosphide thin film is deposited by metal organic chemical vapor deposition (MOVCD).    USE - Solar cell e.g. indium phosphide solar cell for converting solar energy to electric energy.    ADVANTAGE - Solar cells are manufactured at low cost since number of semiconductor raw materials used are minimized and low cost matched substrate is used, and the substrate is robust and lightweight and act as outstanding diffusion barrier to environment and exhibits high thermal stability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing method for solar cell.    DESCRIPTION OF DRAWING(S) - The drawing illustrates the poly-indium phosphide fabrication scheme, poly-indium phosphide on flexible molybdenum foil and poly-indium phosphide which sputtered molybdenum on a 3 inch wafer.
NOVELTY - Manufacturing nanoparticles of a target material comprises: mixing graphene oxide with an aqueous solvent to prepare an aqueous solution; mixing the target material with an organic solvent to prepare an organic solution; mixing the aqueous solution with the organic solution; and preparing nanoparticles of the target material by the graphene oxide.    USE - The method is useful for manufacturing nanoparticles of a target material including an organic material, an inorganic material, and/or a metallic material, or a polymer, a monomolecule, an organic semiconductor, a metal, an alloy, a metal oxide, and/or a mineral, or a conjugated polymer, where the nanoparticles are useful in: an electronic device including an organic LED, a solar cell, a printing device, a bioimaging device, and a sensor (all claimed), where the printing device includes inkjet printing device, spin coating device, roll-to-roll printing device, and screen printing device; display elements such as a field emission display, a LCD and a LED; battery cells such as a supercapacitor and a fuel cell; and nanodevices such as a field effect transistor, a memory device, and an electrical device such as a hydrogen storage device, and an optical fiber.    ADVANTAGE - The method is capable of manufacturing nanoparticles of the target material with high yield, improved electrical and optical properties, and high efficiency in an environmentally-friendly manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for nanoparticles comprising the target material, and graphene or its oxide formed on a surface of the target material.
NOVELTY - Preparation of transition metal oxide involves combining peroxide with a solution of an alcohol-based solvent and a transition metal.    USE - Preparation of transition metal oxide used for forming film for organic device e.g. organic light-emitting diode, organic solar cell and organic photodetector in apparatus (all claimed). Uses include but are not limited to oxide-based photovoltaic, functional circuits and systems, optoelectronic and/or electronic device, and display and/or solid-state lighting application.    ADVANTAGE - The method enables preparation of economical transition metal oxide having excellent hole injection/collection property, transport property, stability for long period of time in external environment, dispersibility with respect to water-free solvent and quality, by a simple process. The transition metal oxide film obtained using the transition metal oxide has excellent transparency. The organic device containing the transition metal oxide has excellent durability and stability. The organic solar cell containing the transition metal oxide has excellent photovoltaic performance and electrical property, and is environmentally-friendly.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) apparatus, which comprises an organic device including a transition metal oxide layer in which constituents of layer comprises transition metal and peroxide; and    (2) preparation of transition metal oxide film, which involves preparing a transition metal oxide by combining transition metal with solution of alcohol based solvent and peroxide solution, vacuum-pumping transition metal, peroxide solution and alcohol-based solvent, forming an at least partially dried transition metal oxide, and dispersing at least partially dried transition metal oxide in water-free solvent.
NOVELTY - Surface of III-nitride substrate or film (20-23) is planarized by coating surface with layer of sacrificial planarization material (30) to cover surface roughness features, etching sacrificial planarization material to expose surface roughness features, and simultaneously etching sacrificial planarization material and surface roughness features to reduce height of surface roughness features in which ratio of sacrificial planarization material etch rate to III-nitride etch rate is 0.2-1.2.    USE - Method of planarizing surface of III-nitride substrate or film for semiconductor device e.g. LED, laser diode, or solar cell (all claimed).    ADVANTAGE - Formation of structural defects on planarized surface can be suppressed, and high quality optical and semiconductor devices can be produced.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) III-nitride substrate or film; and    (2) semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the possible evolution of GaN surface features resulting from different selectivities of etching of the sacrificial planarization material vs. the GaN material.    III-nitride substrate or film (20-23)    Planarization material (30)
NOVELTY - Conductive polymer is obtained by carrying out chemical oxidative polymerization of 3,4-dialkoxy thiophene (I), and polyanion in presence of acetylene glycol-type surfactant (II) and (III) where content of acetylene glycol-type surfactant is 10-300 parts mass with respect to 100 parts mass 3,4-dialkoxy thiophene (I).    USE - Conductive polymer is used for electroconductive composition for forming coating film (all claimed). Uses include but are not limited to solid electrolytic capacitor, liquid crystal display, electroluminescent display, plasma display, electrochromic display, solar cell and touchscreen.    ADVANTAGE - The coating film obtained using conductive polymer has excellent electroconductivity, and adhesiveness.    DETAILED DESCRIPTION - Conductive polymer is obtained by carrying out chemical oxidative polymerization of 3,4-dialkoxy thiophene of formula (I), and polyanion in presence of acetylene glycol-type surfactant of formulae (II) and (III) where content of acetylene glycol-type surfactant is 10-300 parts mass with respect to 100 parts mass 3,4-dialkoxy thiophene (I).    R1,R2=H, 1-4C alkyl or optionally substituted 1-4C alkylene;and    R3-R8=1-5C alkyl.    INDEPENDENT CLAIMS are included for the following:    (1) electroconductive composition, which comprises conductive polymer; and    (2) coating film, which comprises electroconductive composition as conductor.
NOVELTY - Conductive polymer is obtained by carrying out chemical oxidative polymerization of 3,4-dialkoxy thiophene (I), and polyanion in presence of aqueous medium mixed with acetylene glycol-type surfactant (II) and (III) where content of acetylene glycol-type surfactant is 0.001-1 mol with respect to 1 mol 3,4-dialkoxy thiophene (I).    USE - Conductive polymer is used for electroconductive composition for forming coating film (all claimed). Uses include but are not limited to solid electrolytic capacitor, liquid crystal display, electroluminescent display, plasma display, electrochromic display, solar cell and touchscreen.    ADVANTAGE - The coating film obtained using conductive polymer has excellent electroconductivity, and adhesiveness.    DETAILED DESCRIPTION - Conductive polymer is obtained by carrying out chemical oxidative polymerization of 3,4-dialkoxy thiophene of formula (I), and polyanion in presence of aqueous medium mixed with acetylene glycol-type surfactant of formulae (II) and (III) where content of acetylene glycol-type surfactant is 0.001-1 mol with respect to 1 mol 3,4-dialkoxy thiophene (I).    R1,R2=H, 1-4C alkyl or optionally substituted 1-4C alkylene;    R3-R8=1-5C alkyl;    i,m,n=0-25;and    i+m=0-40.    INDEPENDENT CLAIMS are included for the following:    (1) electroconductive composition, which comprises conductive polymer; and    (2) coating film, which comprises electroconductive composition as conductor.
NOVELTY - An anode pole and a cathode pole are immersed in an aqueous solution containing a hydrazine compound, and two poles are electrically connected by an external circuit to produce hydrogen. The anode pole contains anode catalyst comprising metal complex containing nitrogen-containing polycyclic compound as a ligand and 8-group or 9-group element as metal component, and metal consisting of 9-group element.    USE - Production of hydrogen used as fuel for fuel cell.    ADVANTAGE - Hydrogen is efficiently produced at controlled conditions.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for hydrogen production apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic block diagram of hydrogen production apparatus. (Drawing includes non-English language text)
NOVELTY - Manufacture of solar cell involves performing a dry etching process to form a textured surface including several minute protrusions on a primary surface of a semiconductor substrate (110), performing primary cleansing process for removing damaged portions of surfaces of the minute protrusions, performing secondary cleansing process for removing impurities remaining or again adsorbed on surfaces of the minute protrusions using an acid chemical after performing primary cleansing process, and forming an emitter region (121) at primary surface of the semiconductor substrate.    USE - Manufacture of solar cell (claimed).    ADVANTAGE - The method enables stable manufacture of solar cell having excellent efficiency and improved anti-reflection effect, field passivation effect and surface passivation effect.    DETAILED DESCRIPTION - Manufacture of solar cell involves performing a dry etching process to form a textured surface including several minute protrusions on a primary surface of a semiconductor substrate, performing primary cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on surfaces of the minute protrusions, performing secondary cleansing process for removing impurities remaining or again adsorbed on surfaces of the minute protrusions using an acid chemical after performing primary cleansing process, and forming an emitter region at primary surface of the semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of solar cell.    Semiconductor substrate (110)    Emitter region (121)    Dielectric layers (131,132)    Back bus bar (152)    Back surface filed regions (172)
NOVELTY - A polishing composition (3) comprises a fatty acid salt of an alkali metal, colloidal silica (4) and an oxidizing agent. The concentration of fatty acid salt of the alkali metal is 1.7x 10-4-8.6x 10-4 mol/kg.    USE - Composition is used for polishing compound semiconductor substrate e.g. indium phosphorus group board (claimed) for semiconductor devices such as laser diode and solar cell.    ADVANTAGE - The polishing composition has excellent polishing rate even when high-speed polishing is performed, and provides excellent quality substrate after the polishing.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of compound semiconductor substrate (1), which involves preparing compound semiconductor substrate, polishing the surface of compound semiconductor substrate using polishing composition and cleaning the surface of compound semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a conceptual diagram of the polishing process.    Substrate (1)    Abrasive cloth (2)    Polishing composition (3)    Colloidal silica (4)
NOVELTY - The method involves forming a silicon nitride (SiNX) film (36b) that is in contact with a chemical silicon dioxide (SiO2) film (36a). Hydrogen (H2) gas is transduced on the silicon dioxide film. The silicon nitride film is deposited by silicon nitride film deposition process. Annealing treatment of the silicon dioxide film and the silicon nitride film is carried at temperature of 900 degrees by annealing treatment process. The silicon dioxide film and the silicon nitride film are laminated on a p-type silicon substrate (31).    USE - Method for manufacturing an interface passivation structure that is utilized for a photoelectric conversion element i.e. passivation-type solar cell.    ADVANTAGE - The silicon nitride film is deposited by the silicon nitride film deposition process so as to achieve high passivation performance of the silicon nitride film, thus improving photoelectric conversion efficiency of a solar cell in a better manner.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a photoelectric conversion element i.e. passivation type-solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of an interface passivation structure.'(Drawing includes non-English language text)'    Interface passivation structure (1)    P-type silicon substrate (31)    Aluminum film (33)    Chemical silicon dioxide film (36a)    Silicon nitride film (36b)
NOVELTY - Germanium and antimony are epitaxially grown on a predetermined substrate simultaneously by direct current sputter deposition method, and n+-type germanium semiconductor layer with electron concentration of 1019 cm-3 or more.    USE - Formation of n-type germanium semiconductor layer used for ohmic contact structure (claimed) for germanium transistor and silicon-germanium stacked solar cell.    ADVANTAGE - The method enables economical formation of n-type germanium semiconductor layer. The ohmic contact structure containing n-type germanium semiconductor layer has reduced contact resistance of electrode layer and n-type germanium semiconductor layer, and is economically manufactured by simple and environmentally-friendly process.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for ohmic contact structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of direct current sputter deposition apparatus. (Drawing includes non-English language text)
NOVELTY - An antireflection coating comprises a layer comprising spherical nanoparticles having texture formed on a light-receiving portion of a solar cell.    USE - Antireflection coating is used for solar cell (claimed).    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of antireflection coating; and    (2) solar cell.
NOVELTY - Manufacture of condensed heterocyclic compound (II) involves using bicyclic compound (I).    USE - Manufacture of heterocyclic compound used for organic semiconductor material (all claimed). Uses include but are not limited to organic electroluminescent element for mobile telephone and television, organic solar cell element, organic photoconversion element and organic transistor element.    ADVANTAGE - The method provides asymmetrical heterocyclic compound having high purity with high yield, by simple process.    DETAILED DESCRIPTION - Manufacture of condensed heterocyclic compound of formula (II) involves using bicyclic compound of formula (I).    X1=halo;    Y1,Y2=oxygen, sulfur or selenium;    R1,R2=substituent;    m,n=0-4;and    or R1+R2=optionally substituted ring (when m and n are 2 or more).
NOVELTY - The system (1a) comprises a fuel cell system (3) located in an operational gas container (5), a gas receiving device (7) connected to the operational gas container for storage of boil-off gas (BO), a sorbent for receiving the boil-off gas from the operating gas container. The fuel cell system comprises a cooling system with a coolant spacer that is connected to the gas receiving device. The fuel cell system and the gas receiving device are arranged in series at the coolant spacer. A pressure regulator regulates the pressure in the gas receiving device.    USE - The operational gas system is useful for an underwater vehicle such as submarine and unmanned underwater vehicle (claimed).    ADVANTAGE - The simple operational gas system can efficiently store the boil off gases in the underwater vehicle.    DETAILED DESCRIPTION - The system (1a) comprises a fuel cell system (3) located in an operational gas container (5), a gas receiving device (7) connected to the operational gas container for storage of boil-off gas (BO), a sorbent for receiving the boil-off gas from the operating gas container. The fuel cell system comprises a cooling system with a coolant spacer that is connected to the gas receiving device. The fuel cell system and the gas receiving device are arranged in series at the coolant spacer. A pressure regulator regulates the pressure in the gas receiving device. A temperature regulator regulates the temperature in the gas receiving device. The sorbent includes a molecular sieve for adsorbing the boil off gas, where the sorbent is a hydride storage. An INDEPENDENT CLAIM is included for a method for operating the operation gas system.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a system for an underwater vehicle.    Operation gas system (1a)    Fuel cell system (3)    Operational gas container (5)    Gas receiving device (7)    Boil-off gas. (BO)
NOVELTY - A dihydrophenazine compound (I) is new.    USE - New dihydrophenazine compound is used as host material for hole-transport material, hole-injection material and for organic electroluminescent element (all claimed). Uses include but are not limited to electrophotographic photoreceptor, photoelectric conversion element, solar cell and image sensor.    ADVANTAGE - The dihydrophenazine compounds provides organic electroluminescent device with excellent durability.    DETAILED DESCRIPTION - A dihydrophenazine compound of formula (I) is new.    R1-R6=H, 1-18C linear, branched or cyclic alkyl, 1-18C linear, branched or cyclic alkoxy, 6-24C aryl or 6-24C aryloxy;    or R1+R2=5-membered ring or 6-membered ring;and    Ar'=benzofluorenyl group of formula (a) or 6-18C aryl optionally substituted by 1-18C linear, branched or cyclic alkyl, 1-18C linear, branched or cyclic alkoxy or cyano.
NOVELTY - The fabric comprises an inner layer adhered with a ventilating and retaining moisture layer. A radiation-proof layer is provided with an outer insulation layer. The inner layer is provided with 50-70 wt.% of a jute fiber and 30 -50 wt.% of a mulberry fiber. The radiation-proof layer is provided with 30-50 wt.% of a cotton fiber and 50 -70 wt.% of a silk fiber. The radiation-proof layer is fixed with an interweaving warp and a weft. A solar pearl sheet is stringed by using nylon seam. An outer warm-keeping layer is fixed with a solar pearl sheet. A solar cell is connected with the pearl sheet.    USE - Radiation-proof insulating shell clothing fabric.    ADVANTAGE - The fabric has high air permeability, better moisture proof effect and radiation-proof effect and high heat conductivity.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a radiation-proof insulating shell clothing fabric.
NOVELTY - Preparation of branched nanostructure molybdenum catalyst comprises dissolving chloroplatinic acid hexahydrate (H2PtCl6.6H2O) in deionized water to prepare 0.02-0.8 M solution, adding polyethylene pyrrolidone and isopropyl alcohol, and uniformly stirring, where molar ratio of H2PtCl6.6H2O to polyethylene pyrrolidone to isopropyl alcohol is 100:5:2; sealing and irradiating for 5-15 minutes, where irradiation dose is 100-300 kGy and current is 7 mA; and centrifuging, removing supernatant liquor, repeatedly washing precipitate with ethanol and water and vacuum drying.    USE - Method for preparing branched nanostructure molybdenum catalyst (claimed) used as methanol fuel cell anode catalyst.    ADVANTAGE - The catalyst has electrochemical surface area of 39.5 m2/g, high electrocatalysis activity, and high antitoxicity, and solves problem such as methanol anode oxidization rate, polarization phenomenon, and low catalytic efficiency.
NOVELTY - Manufacturing covellite particles (I), comprises reacting an aqueous solution containing copper salt and sulfurate salt in a molar ratio of 1:1.    USE - (I) is useful in coating material for coating glass plate (windowpane of buildings or car window) or transparent plastic substrate, visible light blocking film for coating and heat blocking film for coating (all claimed), and conductive thin film substrate as electromagnetic shielding material, semiconductor packaging material and automotive or architectural or automotive window films (e.g. touch screen, LCD, or plasma display panel) for antistatic, solar cell, car window cover, car interior mold, building interiors or window coating.    ADVANTAGE - (I) has a conductivity of 10-1 to 105 Omega /cm, a dispersibility of 10-30 mV, light permeability in the visible light area of greater than or equal to 80%, and light permeability in the infrared area of greater than or equal to 80% (all claimed). The method is economical.    DETAILED DESCRIPTION - Manufacturing covellite particles of formula (CuxSy) (I) (where the coupling ratio of the x/y is 0.8-1.5), comprises reacting an aqueous solution containing copper salt and sulfurate salt in a molar ratio of 1:1. An INDEPENDENT CLAIM is also included for (I) manufactured from the above mentioned method.
NOVELTY - The sputtering device has a tube shape target (200) which is arranged in the process space of the processing chamber (100). A magnet module unit (300) is inserted and arranged inside the tube shape target. A driver (400) is bonded to the tube shape target. A rotation driving unit (600) is installed outside the processing chamber to provide different rotary motions to swing the driver shafts for making the driver to rotate the tube shape target. The drive shafts are made of carbon alloy material, steel chromium molybdenum (SCM) material, monomer cast nylon or acetal material.    USE - Sputtering device for use in manufacturing process of semiconductor device, solar cell, and display panel.    ADVANTAGE - The maintenance time and cost of the equipment can be reduced. The structure of the driver can be simplified. The utilization ratio of the tube shape target can be increased, and the thickness of the thin film deposited in the substrate can be uniformly performed.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the sputtering device.    Processing chamber (100)    Tube shape target (200)    Magnet module (300)    Driver (400)    Module unit (500)    Rotation driving unit (600)
NOVELTY - Preparing cellulose nano fiber/polylactic acid composite film comprises (i) pretreating the raw materials, using benzyl alcohol extracting method to remove the impurity and terpene compound in the raw material, (ii) carrying out chemical process to remove lignin and hemicellulose in the raw material, (iii) carrying out mechanical treatment to prepare cellulose fiber suspension liquid, (iv) vacuum filtering to prepare the nano cellulose film, and (v) preparing nano cellulose/polylactic acid composite film material by mixing/impregnation.    USE - The film is used in flexible display, electronic paper, solar cell, flexible circuit, and glass substrate substitute.    ADVANTAGE - The method uses chemical method to remove most of lignin and hemicellulose, by reducing hydrogen bonding force between the filaments of hemicellulose and lignin, and uses mechanical treatment to obtain uniform shape and size; and produces nano cellulose with diameter of small size and uniform distribution, with fibril diameter of 15-50 nm and length-diameter ratio of 1200.
NOVELTY - The method involves adding graphene oxide to carbon nanotubes. A nitrogen-doped graphite alkene is added to mixed solution. A filtering film is annealed after reduction treatment to obtain a carbon nanotube film material. The carbon nanotubes are filled with graphene oxide solution. Active agent is added with water solution. Dispersing solution is obtained. Iron salt solution is filled in a quartz vessel. An UV lamp is irradiated.    USE - High-efficient carbon nano-tube thin film solar cell preparation method.    ADVANTAGE - The method enables ensuring high photoelectric conversion efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view illustrating a high-efficient carbon nano-tube thin film solar cell preparation method.
NOVELTY - The method involves cleaning a silicon sheet. A surface of an oxide layer is removed by using de-ionized water. The silicon sheet is dried by nitrogen. A surface of the silicon sheet is etched by using alkaline solution at concentration range of 2-4 wt%. A silicon nano-wire structure is prepared at reaction temperature of 70 degrees Celsius. The silicon sheet is covered by a discontinuous noble metal particle layer. The silicon sheet is soaked in hydrofluoric mixed solution with concentration of 3-6mol/l. A pyramid-shaped silicon nano-wire compound light trapping structure is obtained.    USE - Solar cell surface pyramid-silicon nano-wire composite structure preparation method.    ADVANTAGE - The method enables improving ultra-hydrophobic performance and visible light range, reducing surface reflectivity and realizing surface chemical modification at surface contact angle of 150 degrees.    DESCRIPTION OF DRAWING(S) - The drawing shows a photograph of a solar cell surface pyramid-silicon nano-wire composite structure.
NOVELTY - The method involves cleaning a polycrystalline silicon slice by mixed solution of nitric acid, chromic acid and hydrofluoric acid. A PN junction is prepared. A silicon chip is placed in atmosphere for realizing phosphorus oxychloride diffusion, where diffusion temperature is set between 700-900 degrees centigrade. Corrosion slurry is uniformly covered on a back side of a silicon sheet. Back printed corrosion slurry is heated. Residual corrosion slurry is washed to remove a front glass. A silicon nitride film is obtained by performing PECVD technique on a front side of the silicon sheet.    USE - Corrosion slurry based polycrystalline silicon solar battery back surface polishing method.    ADVANTAGE - The method enables reducing back polishing complexity, technical steps, production cost, chemical and gas dosage and environment pollution.    DETAILED DESCRIPTION - The corrosion slurry contains sodium hydroxide/potassium hydroxide.
NOVELTY - The method involves setting screen printing screen up on a conductive base. Catalyst slurry through the screen printing screen up printing a layer of catalyst is provided on a conductive base layer. Solvent is heated in the catalyst layer. Viscosity is 1000-5000cp. Thickening agent is cellulose type. Dosage is 0.01-5 percent. The thickening agent is sodium carboxymethyl cellulose, sodium carboxymethyl 2- carboxylic ethyl cellulose, methyl cellulose, 2 hydroxypropyl methylcellulose, 2 methylcellulose, 2 methylcellulose, 2 butyl- hydroxyethyl ethyl cellulose and hydroxypropyl cellulose.    USE - Preparation method for a proton exchange membrane fuel cell catalyst layer.    ADVANTAGE - The method enables improving electrochemical performance.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of a preparation method for a proton exchange membrane fuel cell catalyst layer.
NOVELTY - The method involves preparing (S101) the n-type crystalline silicon substrate. The genuine type amorphous semiconductor layer is laminated (S103) on the rear surface of the substrate. The p-type amorphous semiconductor layer and a transparent conducting oxide are formed (S105) on the transparent conducting oxide of the p area. The N-region is formed (S106) that diffuses through laser irradiation. The laser is locally irradiated in the dopant solution or the paste. The N-type impurity ion is coated on a substrate portion, in which N region is formed.    USE - Method for fabricating back contact type hetero-junction solar cell.    ADVANTAGE - The p-type amorphous semiconductor layer and the transparent conducting oxide are formed on the transparent conducting oxide of the p area and the N-region is formed that diffuses through laser irradiation, thus prevents the contamination of the silicon substrate, the amorphous silicon layer and the damage, such as etching paste.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a back contact electrode type heterojunction solar cell manufacturing method. (Drawing includes non-English language text).    Preparing the n-type crystalline silicon substrate (S101)    Texturing the surface of the substrate to form the concavo-convex (S102)    Laminating the genuine type amorphous semiconductor layer on the rear surface of the substrate (S103)    Forming the p-type amorphous semiconductor layer and a transparent conducting oxide (S105)    Forming N region that diffuses through laser irradiation (S106)
NOVELTY - The method comprises: producing binary-phase nanoparticles of copper, indium, gallium, selenium (CI(G)S)-group; preparing hybrid-type slurry by mixing precursor solution comprising nanoparticles and CI(G)S-group element, solvent and chelating agent; aging the hybrid slurry for 5-10 days; vacuum coating the aged slurry on a CI(G)S-group thin film; and heat-treating the formed film. The method further comprises carrying out ultrasonic treatment for the mixture to mix and disperse the slurry components; and drying the coating before heat-treating the formed film.    USE - The method is useful for manufacturing CIGS group-thin film of a solar cell (all claimed).    ADVANTAGE - The method is capable of manufacturing CIGS group-thin film with improved reliability and efficiency.    DETAILED DESCRIPTION - The method comprises: producing binary-phase nanoparticles of copper, indium, gallium, selenium (CI(G)S)-group; preparing hybrid-type slurry by mixing precursor solution comprising nanoparticles and CI(G)S-group element, solvent and chelating agent; aging the hybrid slurry for 5-10 days; vacuum coating the aged slurry on a CI(G)S-group thin film; and heat-treating the formed film. The binary-phase nanoparticles producing step is carried out using low temperature colloidal method, solvothermal synthesis method, or ultrasonic micro-way synthesis method. The method further comprises carrying out ultrasonic treatment for the mixture to mix and disperse the slurry components; and drying the coating before heat-treating the formed film. The aging step is carried out using ultrasonic treatment. The vacuum coating step is carried out by one of spraying method, ultrasonic spraying method, spin coating method, tape casting method, screen printing method or inkjet printing method. The heating step is carried out at 500-530 degrees C for 60-90 minutes. An INDEPENDENT CLAIM is included for a CI(G)S-based thin film.
NOVELTY - The method involves providing a silicon substrate (24). The substrate is placed in a vacuum chamber (20). A surface of the substrate is conditioned by plasma-etching the surface under vacuum and providing a conditioned surface (25). The substrate is heated to a temperature. An aluminum film is deposited onto the conditioned surface of the substrate by a sputtering method under an atmosphere of argon. An epitaxial aluminum nitride layer is deposited on the aluminum film by a sputtering method under an atmosphere of nitrogen and argon.    USE - Method for depositing aluminum nitride layer on silicon substrate used in semiconductor of LED, laser diode, photovoltaic solar cell and power device such as high electron mobility transistor.    ADVANTAGE - Since the epitaxial aluminum nitride layer is deposited on the aluminum film by sputtering method under atmosphere of nitrogen and argon, the substrate can be actively cooled, while preventing the accumulation of contaminants on the conditioned surface. Thus, the excessive thermal stress on the substrate and the limitations of handling the equipment can be avoided, while the substrate is cooled down and the temperature decrease is adjusted.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the apparatus for depositing aluminum film and aluminum nitride layer on substrate.    Vacuum chamber (20)    Target holder (21)    Target (22)    Silicon substrate (24)    Conditioned surface (25)
NOVELTY - Raw material is prepared using glass composition containing 11-20 %mass sodium oxide and 11 %mass or less boron trioxide. The obtained raw material is melted within a melting container. Then, surface sodium component is volatilized by overflow down-draw method, and plate-shaped glass is obtained. The resulted product is immersed in potassium nitrate molten salt, and a compressive-stress layer is formed in the surface by ion-exchanging sodium ion in glass for reinforcement, and potassium ion in potassium nitrate molten salt, to obtain tempered glass substrate.    USE - Manufacture of tempered glass substrate used for touchscreen display, cover glass of solar cell, cover glass of mobile telephone, cover glass of solid-state imaging device. Uses include but are not limited to digital camera, portable terminal, magnetic disc and flat panel display.    ADVANTAGE - The method enables manufacture of tempered glass substrate having excellent strength with high productivity within short period of time.    DETAILED DESCRIPTION - Raw material is prepared using glass composition containing 11-20 %mass sodium oxide and 11 %mass or less boron trioxide. The obtained raw material is melted within a melting container. Then, surface sodium component is volatilized by overflow down-draw method, and plate-shaped glass having silica abundant layer on surface for reinforcement is obtained. The resulted product is immersed in potassium nitrate molten salt, and a compressive-stress layer is formed in the surface by ion-exchanging sodium ion in glass for reinforcement, and potassium ion in potassium nitrate molten salt, to obtain tempered glass substrate. An INDEPENDENT CLAIM is included for tempered glass substrate.
NOVELTY - A process paper (1) comprises paper base material (2) and releasing agent layer (3) formed on paper base material. Tensile strength of machine direction (MD) and transverse direction (TD) of paper base material regulated by JIS P8113 is 1-10 kN/m. Elongation of MD and TD regulated by JIS P8113 is 0.5-6%. Tear strength of MD and TD regulated by JIS P8116 is 100-1000 mN.    USE - A process paper for manufacture of film used for solar cell sealing (claimed).    ADVANTAGE - Occurrence of blocking on wound film for solar cell sealing can be prevented.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of film used for solar cell sealing which involves subjecting resin composition which forms film for solar cell sealing on releasing agent layer of process paper to extrusion molding process, forming laminated body on which process paper and film for solar cell sealing are laminated, and peeling process paper from laminated body.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional diagram of the process paper.    Process paper (1)    Paper base material (2)    Releasing agent layer (3)
NOVELTY - The method involves performing (S1) the annealing process on a metal oxide thin film layer formed on a buffer layer provided in a substrate. The metal solution is dropped down (S2) on the rotated substrate. The metal oxide thin film layer in the buffer layer is crystallized (S3) after the annealing process. The substrate is made from silicon, silicon monoxide, indium tin oxide, glass or gallium nitride. The metal solution is selected from aluminum, gallium, zinc and tin. The metal oxide thin film layer is selected from zinc oxide, and the indium-zinc oxide and gallium-zinc oxide.    USE - Method of growing nanoparticle-type superlattice thin film of thermoelectric module for solar cell.    ADVANTAGE - The thermal conductivity of thermoelectric module can be reduced using the nano technology, thus the thermal performance of the thermoelectric module can be improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process of growing nanoparticle-type superlattice thin film of thermoelectric module. (Drawing includes non-English language text)    Step for performing annealing process on metal oxide thin film layer formed on buffer layer provided in substrate (S1)    Sep for dropping down metal solution on rotated substrate (S2)    Step of crystallizing metal oxide thin film layer formed on buffer layer (S3)
NOVELTY - Manufacturing graphene oxide sponge by freeze-drying, comprises (a) oxidizing graphite and purifying to obtain graphene oxide slurry, and (b) freezing and drying the slurry.    USE - The method is useful for manufacturing graphene oxide sponge by freeze-drying (claimed).    ADVANTAGE - The graphene oxide sponge is free of denaturation and has highly improved dispersibility, where high-quality graphene can be produced by thermal reduction of the graphene oxide sponge, and the graphene oxide sponge can be used as industrially important liquid raw material including sol, ink, colloid, paste and slurry, and the high-quality graphene can be used as thin film material, coated material, film material, composite, solar cell, transparent conductive film, sensor and electromagnetic interference shielding material.
NOVELTY - Polymer (Q) comprising a first cyclopentadienyl repeating unit (I) and having a molecular weight of greater than or equal to 40000 Da, is new.    USE - (Q) is useful in an electronic device including p-channel transistor (all claimed), a field effect transistor, organic light emitting diodes, solar cells and photovoltaic cells.    ADVANTAGE - (Q) has high carrier mobility, optimal highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels and more efficient hole injection, high melting temperature and thermal, oxidative and mechanical stabilities, good solubility in common organic solvents and solution processability, and improved broad absorption bands (-500 nm to 900-1000 nm) and low optical band gaps (1.2-1.4 eV) for maximum light harvesting in solar cells.    DETAILED DESCRIPTION - Polymer (Q) comprising a first cyclopentadienyl repeating unit of formula (I) and having a molecular weight of greater than or equal to 40000 Da, is new.    X = O, S or Se;    R = H or optionally substituted 1-30C-organic group;    R2-R5 = H, halo, CN or optionally substituted 1-30C-organic group;    m = 0-3;    A = electron withdrawing group of formula (a) or (b) comprising two or more rings fused together, with two of the rings each comprising at least one imine group;    Y1 = O, S, Se or N(R6); and    R6 = H or optionally substituted 1-30C-organic group.    INDEPENDENT CLAIMS are included for:    (1) the preparation of (Q); and    (2) a p-channel transistor comprising a semiconducting layer obtained by solution processing and annealing a composition, where the composition comprises at least one solvent and (Q), and the transistor has a field effect carrier mobility of 0.3 cm2/volt-second or more.
NOVELTY - The battery separator (10) has a gel impregnated non-woven component (14) comprising acid and non-acid dissolvable fibers. The component contains silica gel having a basis weight of about 20 to 160% that of the basis weight of the component itself. The acid dissolvable fibers are cellulosic fibers, while the non-dissolvable fibers are polymer, e.g. polyolefin, or glass fibers.    USE - Battery separator for lead acid battery (claimed) e.g. idle stop start (ISS) battery, hybrid electric vehicle battery, electric fuel battery.    ADVANTAGE - Enables the use of gel that is capable of surviving the electrolyte of the battery, since the gel has solubility and physical adsorption properties enabling semi-dissolution resulting in gel formation and acid incorporation within the acidity constraints of the battery's electrolyte.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a gel impregnated nonwoven component.    DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of the battery separator.    Battery separator (10)    Microporous membrane (12)    Gel impregnated non-woven component (14)    Backweb (18)    Bonds (24)
NOVELTY - The method involves forming a base material layer on a metal material. A macromolecular film is coated on a roll part. A coating layer is formed on the base material layer. Energy dose is irradiated on the base material layer through a laser. A membranous polymers film is positioned in a gap on the roll part. Length of the roll part is 1.5-5m. The membranous polymers film is made of transparent material. The macromolecular polymers film is compressed.    USE - Method for manufacturing a semiconductor substrate that is utilized for a solar cell, a display device and a LED device.    ADVANTAGE - The method enables reducing thermal transformation of the coating layer and roughness of the base material layer.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a method for manufacturing a semiconductor substrate.
NOVELTY - The apparatus has a rocking frame that inhibits rotation of tightening of the hollow filter element (22). The rocking frame surrounds the vicinity of the inner cavity filter element (24) and is included with filter cartridge including the ion resin. The filter cartridge is connected to the inlet port. A filter housing is provided with outlet port and filter cap (26) for covering the upper end of outside hollow filter element and inner cavity filter element. The upper end of the inner cavity filter element is bind in the bottom surface of the filter cap.    USE - Ion filter apparatus for fuel cell e.g. hydrogen fuel cell used in vehicle such as car.    ADVANTAGE - The reliability of ion filter apparatus can be improved by minimizing the damage and operation relief of ion filter apparatus through the safe bond among the filter cartridge, and the use. The occurrence of damage to the filter cartridge can be prevented using the ion resin cut-off filter which is set up in the outlet port.    DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of the ion filter apparatus.    Hollow filter element (22)    Inner cavity filter element (24)    Filter cap (26)    Outside hollow frame (222)    Inner cavity frame (242)
NOVELTY - A corrosion removing method involves immersing adhering surface of silicon wafer to be treated in a double corrosion phosphorus fluoride-containing solution and oxidizing agent. The immersed surface is etched. The etching time and etchant concentration are adjusted to obtain a resistance value at an acceptable range before and after etching the silicon wafer.    USE - Method for removing corrosion from a phosphor plasma membrane.    ADVANTAGE - The method enables removing corrosion from the phosphor plasma membrane in an effective manner and improving the appearance and electrical property of the solar cell.
NOVELTY - A heterocyclic compound (I) is new.    USE - New heterocyclic compound is used for organic semiconductor material for thin film for organic electronic device e.g. thin-film transistor element, photoelectric conversion element, organic solar cell element, organic light emission transistor element, organic semiconductor laser element and organic electroluminescent element (all claimed).    ADVANTAGE - The organic semiconductor material obtained by the heterocyclic compound has excellent semiconducting property and stability. The organic electronic device obtained by the thin film containing the organic semiconductor material has excellent heat resistance and weather resistance. The organic solar cell element having excellent durability and photoelectric conversion efficiency, is economically obtained using the organic semiconductor material, by a simple process.    DETAILED DESCRIPTION - A heterocyclic compound of formula (I) is new.    R1,R2=aryl, alkyl (both optionally substituted) or H;and    m,n=1-4.
NOVELTY - Metal compound (I) is new.    USE - (I) is useful for a green dye (claimed) in a color filter for a color image display and a low molecular weight type solar cell.    ADVANTAGE - (I) has improved physical property.    DETAILED DESCRIPTION - Metal compound of formula (I) is new.    M = divalent transition metal, preferably Ti or Ni; and    R1 = 3-8C alicyclic or aryl (optionally substituted), or linear or branched 2-10C-alkyl.    An INDEPENDENT CLAIM is included for a synthetic intermediate of (I) represented by a zinc complex of formula (III).
NOVELTY - The reactor comprises: a reactor main body having a gas inlet port; a heat exchanger that comprises a cooling medium inlet port and is installed inside the reactor main body; and a catalyst layer consisting of catalyst inside the reactor main body in order to surround the heat exchanger. The heat exchanger is comprised of a cooling pipe of coil type. The cooling medium inlet port is adjacent to the gas inlet port of the reactor main body.    USE - The reactor is useful for selective oxidation of carbon monoxide in a fuel reforming system (all claimed).    ADVANTAGE - The reactor has good heat exchange characteristics.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a fuel reforming system.
NOVELTY - A fluorene monomer (I) is new.    USE - Fluorene monomer is used for fuel cell polymer electrolyte membrane.    ADVANTAGE - The fluorene monomer is economically manufactured with excellent dimensional stability, hydrogen ion conductivity and unit cell performance.    DETAILED DESCRIPTION - A fluorene monomer of formula (I) is new. An INDEPENDENT CLAIM is included for manufacture of fluorene monomer, which involves reacting 2,6-dimethoxyphenol and 9H-fluoren-9-one in the presence of sulfuric acid and mercaptopropionic acid.
NOVELTY - Photo-curable composition comprises halogen and (meth)acrylate group-containing silicone compound and photopolymerization initiator.    USE - The photo-curable composition is useful for forming an organic protective layer that is useful in an optical member (all claimed), which is useful in an organic light emitting device and an organic solar cell.    ADVANTAGE - The photo-curable composition improves performance and reliability of the optical member, and reduces moisture, water vapor and/or oxygen permeability of the member.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) an organic protective layer having a thickness of 5 mu m, relative humidity of 100% at 50 degrees C for 24 hours in water measured in a thickness direction, and vapor transmission rate of less 8 g/m2.24 hours; and    (2) an optical member including an organic protective layer.
NOVELTY - A fuel cell power generating device (1) has modifier (2) where fuel gas is supplied to obtain modified gas, fuel cell stack (3) which is electric power generated using the modified gas, combustion system for sewage gases (7) which supplies sewage gas to the combustion system as combustion gas, methane concentration meter (18) which measures the methane gas concentration in the sewage gas supplied to the combustion system for sewage gases, and control part (4) which controls the flow volume of the sewage gas supplied based on the measured methane gas concentration.    USE - A fuel cell power generaating device (claimed).    ADVANTAGE - Sewage gas is utilized for electric power generation and heating the modifier.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for control method of fuel cell power generating device.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of the fuel cell power generating device. (Drawing includes non-English language text).    Fuel cell power generating device (1)    Modifier (2)    Fuel cell stack (3)    Control part (4)    Modification system for sewage gases (5)    Modification system for town gas (6)    Combustion system for sewage gases (7)    Combustion system for town gas (8)    On-off valve (9)    Desulfurizer (10)    Flow control valve (11)    On-off valve (12)    Flow control valve (13, 14)    Carbon monoxide modifying device (16)    Generated electric power monitor (17)    Methane concentration meter (18)    Load monitoring means (19)
NOVELTY - 9,10-Bis(4-((3-(6-(heptan-3-yl)-1H-pyrimidin-4-on-2-yl)ureido)methyl)phenyl)anthracene based quadruple hydrogen-bonded supramolecular assembly of fluorescent nanoparticles (I) is new.    USE - (I) is useful in preparing simulated light capture system (claimed) for photocatalysis, photoluminescence diodes and solar cells, and cell imaging.    ADVANTAGE - (I) provides simulated light capture system with high efficiency and excellent light capture performance and physical properties. The method is simple and efficient.    DETAILED DESCRIPTION - 9,10-Bis(4-((3-(6-(heptan-3-yl)-1H-pyrimidin-4-on-2-yl)ureido)methyl)phenyl)anthracene based quadruple hydrogen-bonded supramolecular assembly of fluorescent nanoparticles of formula (I) is new.    R = 4,4'-(anthracene-9,10-diyl)bis(4,1-phenylene) of formula (II).    INDEPENDENT CLAIMS are also included for:    (1) preparing (I); and    (2) use of (I) in preparing simulated light capture system, comprising 9,10-bis(4-((3-(6-(heptan-3-yl)-1H-pyrimidin-4-on-2-yl)ureido)methyl)phenyl)anthracene in chloroform, adding energy acceptor and mixing to obtain fluorescent energy acceptor molecular nanoparticles, the molar ratio of 9,10-bis(4-((3-(6-(heptan-3-yl)-1H-pyrimidin-4-on-2-yl)ureido)methyl)phenyl)anthracene and energy acceptor is 352:1, 176:1, 88:1,58:1 or 44:1.
NOVELTY - The light trapping structure has a single crystal silicon layer that is etched by small pyramid shape zinc oxide layer of nano-grade up large pyramid, by using sodium hydroxide, isopropanol and sodium silicate. The thickness of the zinc oxide layer on a surface of a silicon substrate is 300-1000 mu m. An average light reflectivity of the light trapping structure with wavelength of 400-1100 mu m is less than 10%.    USE - Light trapping structure for surface of silicon substrate used in solar cell.    ADVANTAGE - The cost can be reduced and high conversion efficiency can be maintained. The reflection on the surface of the silicon substrate can be reduced. The absorption of the visible light by solar battery can be increased.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing light trapping structure for surface of silicon substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows silicon substrate integral reflecting test curve.
NOVELTY - The solar cell has a semiconductor region (23) that is positioned between the conductivity type semiconductor layers. The semiconductor region is provided with a first semiconductor layer that is adjacent to a conductivity type first semiconductor layer. A quantum dot layer (21) is formed on a first semiconductor layer. The quantum dot layer is defined as a barrier layer (15). The first barrier layer is provided with 1.5-2.0-nm-high quantum dot and with respective in-plane density. The barrier layer is formed of gallium, arsenide and antimony.    USE - Solar cell for optical nano device of intermediate band type.    ADVANTAGE - The intermediate band can be formed in surface direction and improvement of quantum efficiency and lifetime improvement of carrier can be achieved, by using the quantum dot of high-density and fixed height range for solar cell. The solar cell can be manufactured more effectively. The lifetime improvement of carrier can be realized by controlling the in-plane density and height of quantum dot.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of quantum dot cell of Type-I band structure applied to the solar cell, and quantum dot cell of Type-II band structure. (Drawing includes non-English language text)    Gallium arsenide substrate (11)    N-type semiconductor layer (13)    Barrier layer (15)    Quantum dot layers (21,22)    Semiconductor region (23)
NOVELTY - A bismuth-doped lead sulfide/cadmium sulfide quantum dot cosensitizing agent is obtained by doping lead sulfide quantum dot with bismuth impurity, forming cadmium sulfide quantum dot and assembling. The molar concentration of impurity bismuth atom and semiconductor quantum dot cation is 1:1-1:1000.    USE - Bismuth-doped lead sulfide/cadmium sulfide quantum dot cosensitizing agent for sensitized solar cell.    ADVANTAGE - The bismuth-doped lead sulfide/cadmium sulfide quantum dot cosensitizing agent has improved light absorption property. The sensitized solar cell has improved photoelectric conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of bismuth-doped lead sulfide/cadmium sulfide quantum dot cosensitizing agent.
NOVELTY - A silver-doped lead sulfide/cadmium sulfide quantum dot cosensitizer is obtained doping lead sulfide/cadmium sulfide semiconductor quantum dot cation with impurity silver atom, and assembling. The molar ratio of impurity silver atom and semiconductor quantum dot cation is 1:1-1:1000.    USE - Silver-doped lead sulfide/cadmium sulfide quantum dot cosensitizer for sensitized solar cell.    ADVANTAGE - The sensitized solar cell obtained using the silver-doped lead sulfide/cadmium sulfide quantum dot cosensitizer has high energy conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of silver-doped lead sulfide/cadmium sulfide quantum dot cosensitizer.
NOVELTY - The method involves obtaining bismuth atom from a soluble salt that is equipped with a semiconductor quantum dot in concentration ratio about is 1:1 to 1:1000. A co-sensitizer assembled quantum dot sensitized solar battery is formed based on a lead sulfide quantum dot obtaining from the soluble salt. An impurity atom is derived from a bismuth chloride, where the impurity atom is a bismuth atom. A soluble substance is generated by a bismuth nitrate soluble salt and solvent, where the quantum dot is a bismuth-doped cadmium sulfide quantum dot.    USE - Vulcanization lead and bismuth doped cadmium sulfide co-sensitizing agent solar battery preparation method.    ADVANTAGE - The method enables preparing solar battery with improved filling factor effect and photoelectric conversion efficiency, and preparing the battery with simple structure and operation at low cost.    DESCRIPTION OF DRAWING(S) - The drawing shows a photograph illustrating of a vulcanization lead and bismuth doped cadmium sulfide co-sensitizing agent solar battery.
NOVELTY - The photovoltaic cell has a solar cell sheet (1) having an upper surface that is distributed with several sub-grid lines (2). The sub-grid lines are formed parallel to each other. A film layer (3) made of ethylene-vinyl acetate is adhered on the sub-grid lines of the solar battery sheet, and formed with several parallel metal wires (4). Several vertical main grid lines (5) formed in the film layer are perpendicularly connected with the sub-grid lines so as to form a net-like structure.    USE - Composite net-shaped photovoltaic cell.    ADVANTAGE - Since the sub-grid lines can be tightly integrated, the formation of the crack in the photovoltaic cell due to the pressure can be avoided. Hence the impact on the current generation can be avoided.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic perspective view of the composite net-shaped photovoltaic cell.    Solar cell sheet (1)    Sub-grid lines (2,5)    Film layer (3)    Metal wire (4)
NOVELTY - The array has a silicon quantum dot layer and a germanium quantum dot layer that are alternately arranged with each other. Distance between the silicon quantum dot layer and the germanium quantum dot layer is about 0.5-3nm.    USE - Multi-junction hetero quantum dot array for a multi-junction hetero quantum dot solar cell.    ADVANTAGE - The array is inexpensive, and has high conversion efficiency.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a multi-junction hetero quantum dot solar cell    (2) a multi-junction hetero quantum dot array manufacturing method    (3) a multi-junction hetero quantum dot solar cell manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a multi-junction hetero quantum dot array.'(Drawing includes non-English language text)'
NOVELTY - The solar battery has a silicon carbide Nano meter line array structure provided with multiple silicon Nano-wires that are fixed on an upper surface of a substrate. The substrate is formed with a metal thin film that is fixed with each silicon Nano-wire. A top end of each silicon Nano-wire is fixed with a metal thin film unit that is made of metal Nano-particles. Each silicon Nano-wire is covered with a functional layer. The metal Nano-particles are made of metal indium or tin particles. The functional layer is formed as an intrinsic silicon thin film layer.    USE - Silicon nanowire array shaped thin film solar battery.    ADVANTAGE - The solar battery improves open-circuit voltage and battery production efficiency, and has wide range of applications and high practicability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a silicon thin film solar battery manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a silicon nanowire array shaped thin film solar battery.
NOVELTY - The preparation device includes raw material heating chambers (1,2) into which elemental tellurium and cadmium are respectively heated. The gas generated in each chamber are led to a gas mixing device (5) via a gas discharge pipes (3,4). The resulting gas mixture is output to a semiconductor substrate (6) via the outlet of the mixing device.    USE - Preparation device for cadmium telluride thin film solar cell.    ADVANTAGE - Provides a cadmium telluride thin film solar cell that is cost-effective to manufacture due to separate generation of gases from both tellurium and cadmium, with the resultant mixed for subsequent preparation of the cadmium telluride thin film.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method for a cadmium tellurium thin film solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of the cadmium tellurium thin film deposition system.    First raw material heating chamber (1)    Second raw material heating chamber (2)    Gas discharge pipes (3,4)    Gas mixing device (5)    Semiconductor substrate (6)
NOVELTY - The method involves placing a surface of a black silicon sheet along sunlight direction by utilizing reactive ion etching process. The silicon sheet is placed in sulfur-containing atmosphere. Energy density in the surface of the silicon sheet is controlled. Temperature of the silicon sheet is maintained when a vaporization point is higher than a melting point. The surface of the silicon sheet is scanned and formed on a surface of a high-concentration sulfur doped alloy layer. Concentration and atomic ratio of sulfur are about 1019-1O21Vcm3 and 0.1-1%, respectively.    USE - Micro-structured crystalline silicon solar battery silicon chip surface sulfur-doping method.    ADVANTAGE - The method enables improving photo-electricity conversion efficiency.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a micro-structured crystalline silicon solar battery silicon chip surface sulfur-doping method.
NOVELTY - The method involves collecting a silicon wafer for making an anti-reflection film. A silicon nitride film is formed by adopting a PECVD technique. Volume ratio of silane gas is about 1.75 to 2.25. A silicon chip surface deposition process is performed to realize an anti-reflecting film preparing process. The silicon nitride film is made of group of air paths of ammonia and silicon-heating gas. Plasma is coated on a silicon chip to form a surface of the silicon nitride film. Thickness and refractive index of the silicon nitride film are respectively about 75 nm to 85 nm and 2.12 to 2.25.    USE - Method for preparing an anti-reflecting film of a solar battery sheet (all claimed).    ADVANTAGE - The method enables improving anti-PID effect of the anti-reflection film and silicon dioxide production and reducing utilization rate of current equipments.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) an anti-reflecting film    (2) a solar battery sheet.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing an anti-reflecting film of a solar battery sheet.'(Drawing includes non-English language text)'
NOVELTY - The cell has a protective layer covered on a surface of a catalyst layer. A thin layer is formed on a micro-pore structure by electrostatic spinning technology. The protective layer is arranged with inert polymer material. Pore size of the microporous structure thin layer is 200nm-10000nm, where thickness of the protective layer is 50mm.    USE - Air cathode microbiological fuel cell.    ADVANTAGE - The cell is convenient for expanding electrode preparation and to maintain cathode near neutral pH, and has better repeatability, and avoids microorganisms adhering to surface of the air cathode by using hydraulic shearing force, and promotes ionic conductivity of anode.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing air cathode microbiological fuel cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating an air cathode microbiological fuel cell.'(Drawing includes non-English language text)'
NOVELTY - The system has a generation apparatus (1) i.e. generator device, integrated with an electric power generation part such that the apparatus performs electric power generation action when liquid e.g. hydrazine, stored in a portable container (2) is supplied to the apparatus. An insertion port (3) is installed at an opening of the container such that liquid is supplied to the apparatus and electric power generation action is started, where the electric power generation action of the apparatus is stopped by extracting the fluid in the container via the insertion port in the apparatus.    USE - Fuel cell electric power generation system for small portable electronic device e.g. mobile device such as mobile telephone and portable information terminal, in a facility. Uses include but are not limited to a family restaurant, a coffee shop, a beauty salon, a beauty parlor, karaoke, a game center, a pachinko hall and a pub.    ADVANTAGE - The system provides electric power supply for charging the portable electronic by carrying a small container in which liquid fuel is stored, so that reduction of size and weight is attained at lower cost. The system stops the electric power generation action of the generation apparatus by extracting the fluid in the container via the insertion port, so that the liquid fuel is utilized effectively without any wastage.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a generating apparatus in which an electric power generation part of the electric power generation system is integrated.    Generation apparatus (1)    Portable container (2)    Insertion port (3)    Air supplying opening (10)    Air exhaust port (11)
NOVELTY - The single crystalline substrate structure (100) comprises a coal property film pattern (110), which is provided with a photoresist pattern that is made from the carbonization thermal process of the nitride. The carbonization thermal process of the nitride is used for forming a gallium nitride film (120), which is provided with an epitaxial thin film. The single crystalline substrate structure is made of mono crystal substrate (105), such as a sapphire single crystal substrate and a single crystal silicon substrate.    USE - Single crystalline substrate structure for use in a light emitting device, a solar cell and a display.    ADVANTAGE - The carbonization thermal process of the nitride is used for forming a gallium nitride film, which is provided with an epitaxial thin film, and thus efficiently suppresses the transition of the lattice defect of the single crystalline substrate structure, and enhances efficiency of the thermal process in the single crystalline substrate structure, while simplifying the structure of the single crystalline substrate structure.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a single crystalline substrate structure, involves processing a carbonization thermal process by using ambient gases, such as hydrogen, nitrogen, argon, neon, helium and oxygen.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a single crystalline substrate structure.    Single crystalline substrate structure (100)    Mono crystal substrate (105)    Coal property film pattern (110)    Gallium nitride film (120)
NOVELTY - A photovoltaic element is fabricated by obtaining inverted solar cell structure (100) including misoriented germanium substrate, base layer (102) containing gallium arsenide, back surface field layer (106) adjoining the base layer, surfactant-induced disordered indium gallium phosphide (InGaP) emitter layer (104), window layer (108) adjoining emitter layer, and contact layer (116), forming a stressor layer on inverted solar cell structure, attaching a flexible handle layer to stressor layer, and spalling through germanium substrate to form solar cell structure.    USE - Fabrication of photovoltaic element for solar cell.    ADVANTAGE - Solar cell performance is improved.    DETAILED DESCRIPTION - A photovoltaic element is fabricated by obtaining inverted solar cell structure (100) including misoriented germanium substrate, base layer (102) containing gallium arsenide, back surface field layer (106) adjoining the base layer, surfactant-induced disordered indium gallium phosphide (InGaP) emitter layer (104) which is provided between germanium substrate and base layer and forms heterostructure with base layer, window layer (108) adjoining emitter layer, and contact layer (116), forming a stressor layer on inverted solar cell structure, attaching a flexible handle layer to stressor layer, and spalling through germanium substrate to form solar cell structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the solar cell structure having single junction including disordered emitter layer grown in reverse order.    Solar cell structure (100)    Base layer (102)    Emitter layer (104)    Back surface field layer (106)    Window layer (108)    Contact layer (116)    Etch stop layer (118)
NOVELTY - The apparatus has a cleaning chamber (400) in which oxygen gas is contained. A door (D4) is arranged between an etch chamber (300) and cleaning chamber. The concentration of oxygen gas contained within the etch chamber is set higher than the concentration of oxygen gas contained in the cleaning chamber. The etch chamber is provided to etch surface of a silicon substrate (S). The cleaning chamber is provided to remove residue adhered on etched surface of silicon substrate. The sulfur hexafluoride gas is contained in the etch chamber.    USE - Apparatus for manufacturing solar battery.    ADVANTAGE - The production efficiency of solar battery can be improved. The manufacturing time of solar battery can be reduced. The processing efficiency of solar battery can be improved effectively. The occurrence of residue or damage on surface of silicon substrate can be prevented.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the etch and cleaning chambers.    Etch chamber (300)    Cleaning chamber (400)    Door (D4)    Roller (R3,R4)    Silicon substrate (S)
NOVELTY - The method involves providing a crystalline silicon substrate. A grading profile is selected. A single crystal germanium tin layer is epitaxially grown on the silicon substrate (42) using the grading profile to grade tin through the layer. The thickness of the single crystal germanium tin layer is 3-5 mu m. The layers of high band gap material are made of indium gallium phosphorus and arsenic.    USE - Method for forming germanium tin template on silicon substrate.    ADVANTAGE - The efficiency of the solar cell can be improved by growing single crystal germanium tin layer on silicon substrate using grading profile to grade tin through layer. The cost of the solar cell can be reduced. The solar cell can be produced efficiently. The crystalline quality of the entire cell can be improved and absorption of the cell can be improved.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) a method of fabricating a solar cell on a silicon substrate;    (2) a germanium tin template on a silicon substrate; and    (3) a solar cell on a silicon substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the germanium template on the silicon substrate.    Germanium template (40)    Silicon substrate (42)    Graded germanium tin portion (44)    Germanium portion (46)
NOVELTY - The wafer (200) has an epitaxial layer (208) exhibiting a thickness of about 25-35 micron, where a diameter of the wafer is 100-300 mm. A density of a basal plane dislocation (BPD) (210) of a portion of the epitaxial layer is lesser than 0.5-2 per square cm. A buffer layer (204) is formed on a surface of a silicon carbide substrate and exhibits a thickness of 0.5-15 microns, where a diameter of the carbide substrate is 100-300 mm. An epitaxial stack is arranged on the carbide substrate. The buffer layer is arranged between the carbide substrate and an N-drift layer (202).    USE - Silicon carbide wafer for use as an epitaxial semiconductor wafer (claimed) in a semiconductor device such as diode, transistor i.e. radio frequency power transistor, and solar cell.    ADVANTAGE - The epitaxial layer exhibits the thickness of about 25-35 micron, where the density of the BPD of the portion of the epitaxial layer is lesser than 0.5-2 per square cm, thus preventing defects from forming in substrate wafers and the epitaxial layer.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for making an epitaxial wafer.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a wafer.    Silicon carbide wafer (200)    N-drift layer (202)    Buffer layer (204)    Epitaxial layer (208)    BPD (210)
NOVELTY - The apparatus has a solar cell structure (402), and a doped cadmium oxide layer (406) overlying the solar cell structure. A metal contact (412) is provided on a back side of the solar cell structure. An additional cadmium oxide layer is located between the solar cell structure and the metal contact. The solar cell structure is provided with an emitter layer (404), such that the cadmium oxide layer overlies the emitter layer.    USE - Multi-junction solar cell apparatus.    ADVANTAGE - Performance of the solar cells is increased by forming and utilizing a low resistivity and high transmission semiconductor in the transparent contact layer. Reduced series resistance allows for higher concentration factors in photovoltaics, so reduced cost and improved efficiency are achieved. Less infrared absorption and higher conductivity allows reduction in the amount of shading losses.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the solar cell structure with additional cadmium oxide layer.    Multi-junction solar cell (400)    Solar cell structure (402)    Emitter layer (404)    Doped cadmium oxide layer (406)    Metal contact (412)
NOVELTY - The forming method involves disposing graphene (110) over one of the major surfaces (104,124) of first and second substrates (120), the first substrate comprising a semiconductor material (108). The major surface of the first substrate is bonded to the major surface of the second substrate with the graphene disposed between the major surfaces of the substrates. The graphene is disposed over one of the major surfaces of the substrates by disposing a graphene monolayer over the major surfaces of the substrates.    USE - Semiconductor structure forming method used in fabrication of semiconductor device. Uses include but are not limited to electronic signal processors, memory devices, optoelectronic devices e.g., LEDs, laser-emitting diodes, solar cells.    ADVANTAGE - Reduces impurity levels, improves the quality of a crystal lattice i.e., reduce the number of defects in the crystal lattice proximate the exposed major surface in the thin layer of semiconductor material and improves the planarity of the exposed major surface by treating the exposed major surface of the thin layer of semiconductor material such as by grinding, polishing, etching, and thermal annealing.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a composite semiconductor substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional side view of a semiconductor structure that includes an active layer formed over the thin layer of material of the structure.    Major surfaces (104,124)    Semiconductor material (108)    Graphene (110)    Second substrates (120)    Vertically extending conductive via (150)
NOVELTY - The cylindrical shape target (100) is made from indium (103). The diameter of an average crystal grain of the whole surface sputter is 1-20 mm. A linear grain boundary is provided with a 50 micrometer or more linear region. A portion of the linear grain boundary is termed as a coincidence boundary. The area ratio of the crystal grain having the linear grain boundary is 5 percent or more. The standard deviation of the average grain size of the whole surface sputter is 6 mm or less.    USE - Cylindrical shape target for use as sputtering target for light absorption layer preparation for cerium-indium-gallium-selenium(CIGS) type thin film solar cell.    ADVANTAGE - The cylindrical shape sputtering target made from indium with in-plane favorable thickness distribution can be provided at the time of sputtering in efficient manner. Since the whole surface of target material is spattered uniformly, the high utilization efficiency of target material can be acquired. The film-thickness uniformity and the stability of sputter can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing cylindrical shape target.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the method of plastic working.    Cylindrical shape target semi-finished product (100)    Base (101)    Support stand (102)    Indium (103)    Backing tube (104)
NOVELTY - Method for optimizing surface property of zinc oxide-based conductive film involves smoothening corrosion pits and convexes on the surface of zinc oxide-based conductive film.    USE - Method for optimizing surface property of zinc oxide-based conductive film used for solar battery (claimed).    ADVANTAGE - The method efficiently provides zinc oxide-based conductive film having excellent transparency. The solar battery provided using oxide-based transparent conductive film has reduced short circuit.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for zinc oxide-based conductive film.
NOVELTY - Formation of silicon nitride film (23) involves supplying process gas containing silane-type gas, nitrogen gas, hydrogen gas or ammonia gas, to processing container, exciting process gas, producing plasma, plasma processing using produced plasma, forming silicon nitride film on substrate, and applying bias electric field with respect to portion of silicon nitride film by controlling ON/OFF of a high frequency electric-power intermittently, during forming silicon nitride film or after forming silicon nitride film.    USE - Formation of silicon nitride film used as sealing material for manufacturing organic electronic device (all claimed). Uses include but are not limited to organic electroluminescent device, organic transistor, organic solar cell and organic field effect transistor.    ADVANTAGE - The method enables formation of silicon nitride film having excellent sealing characteristics, and improved step coverage property. The organic electronic device containing silicon nitride film has excellent corrosion resistance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of organic electronic device; and    (2) film-forming apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of manufacture of organic electroluminescent device. (Drawing includes non-English language text)    Anode layer (20)    Light-emitting layer (21)    Cathode layer (22)    Silicon nitride film (23)    Glass substrate (G)
NOVELTY - A solar cell element consists of semiconductor substrate containing main surface (a) and main surface (b) provided on the other side of main surface (a), and in which p-type semiconductor region and an n-type semiconductor region are laminated, such that the p-type semiconductor region is positioned closest to the main surface (a) and the n-type semiconductor region is positioned closest to the main surface (b). A passivation layer (B) (5) contains aluminum oxide. A protective layer (C) (12) contains zirconium oxide and/or hafnium oxide.    USE - Solar cell element (claimed).    ADVANTAGE - The solar cell element has excellent, durability, reliability, thermal stability, electrical-leak resistance and high moisture resistance.    DETAILED DESCRIPTION - A solar cell element consists of semiconductor substrate containing main surface (a) and main surface (b) provided on the other side of main surface (a), and in which p-type semiconductor region and an n-type semiconductor region are laminated such that the p-type semiconductor region is positioned closest to the main surface (a) and the n-type semiconductor region is positioned closest to the main surface (b). The p-type semiconductor region, a passivation layer (B) containing aluminum oxide, a protective layer (C) containing zirconium oxide and/or hafnium oxide, are sequentially arranged.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional-view of protective layer.    Passivation layer (5)    Protective layer (12)    Oxide layers (21, 22)    Protection unit layer (23)
NOVELTY - An active energy-ray curable resin composition comprises organic-inorganic composite component (a) in which (meth)acryloyl group is bonded with surface through specified bonding (I), ultraviolet absorber (b), hindered-amine light stabilizer (c), and organic solvent (d) having boiling point of 70-200 degrees C. The component (D) comprises 51-99 pts. wt. aliphatic alcohol having boiling point of 70-200 degrees C and 49-1 pts. wt. ester and/or ether structure having boiling point of 70-180 degrees C.    USE - Active energy-ray curable resin composition is used for laminate (claimed). Uses include but are not limited to motor vehicle, medical application, coating layer for protecting articles, building material, window, measuring instrument cover, solar cell, greenhouse coating material, signboard, lighting fixture, etc.    ADVANTAGE - The active energy-ray curable resin composition has excellent adhesiveness. The laminate comprising the active energy-ray curable resin composition has excellent mechanical strength, abrasion resistance, pencil hardness and weather resistance.    DETAILED DESCRIPTION - An active energy-ray curable resin composition comprises organic-inorganic composite component (a) in which (meth)acryloyl group is bonded with surface through -O-Si-X- bonding (I), ultraviolet absorber (b), hindered-amine light stabilizer (c), and organic solvent (d) having boiling point of 70-200 degrees C. The component (D) comprises 51-99 pts. wt. aliphatic alcohol having boiling point of 70-200 degrees C and 49-1 pts. wt. ester and/or ether structure having boiling point of 70-180 degrees C.    X=2-10C alkylene optionally substituted by -CH2-, -OCONH- or -S-.    An INDEPENDENT CLAIM is included for laminate, which has hard-coat layer obtained by irradiating the active energy-ray curable composition.
NOVELTY - A zinc oxide-type conductive film contains zinc, silicon, tin and oxygen. The atomic ratio of silicon with respect to total content of zinc, silicon and tin is 1-8%. The atomic ratio of tin with respect to total content of zinc, silicon and tin is 0.1-1%. The silicon acts as donor. The tin acts with respect to suppression of film thickness dependence of resistivity characteristics.    USE - Zinc oxide-type transparent conductive film is used for apparatus, liquid crystal display, touch screen (all claimed), solar cell, and flat panel display.    ADVANTAGE - The zinc oxide-type transparent conductive film has less resistivity, film thickness dependence of resistivity and resistivity distribution, and reduced thickness of 200 nm.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for sintered compact target for magnetron sputtering, which contains composition comprising zinc, silicon, tin and oxygen.
NOVELTY - A pre-etched surface of silicon wafer is contacted with alkaline-earth metal, to form substructure on pre-etched silicon wafer surface.    USE - Method for treating surface of pre-etched silicon wafer used for solar cell (all claimed).    ADVANTAGE - The solar cell formed using the pre-etched silicon wafer has high luminous efficiency.
NOVELTY - A nonaqueous electrolyte secondary battery contains positive electrode containing conductive polymer, negative electrode containing carbonaceous material capable of occluding and removing ion, and electrolyte solution containing lithium hexafluorophosphate as supporting electrolyte. A separator is positioned between positive and negative electrodes. The positive electrode, negative electrode, and the supporting electrolyte have ionic conductivity.    USE - Nonaqueous electrolyte secondary battery e.g. lithium secondary battery. Uses include but are not limited to driving power supply, portable personal computer, mobile telephone, portable information terminal, hybrid electric vehicle, electric vehicle, and fuel cell electric vehicle.    ADVANTAGE - The nonaqueous electrolyte secondary battery has excellent weight energy density, and stable battery characteristics.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of nonaqueous electrolyte secondary battery.
NOVELTY - An organic-semiconductor material compound having thienothiophene skeleton (I).    USE - Material is used for organic-semiconductor device (claimed) e.g. organic field-effect transistor, organic thin-film solar cell and organic light emitting diode.    ADVANTAGE - The organic-semiconductor material has high charge mobility. The solar cell using the material has high energy-conversion efficiency.    DETAILED DESCRIPTION - An organic-semiconductor material compound having thienothiophene skeleton of formula (I).    A=condensed ring.
NOVELTY - Preparation of cobalt nanoparticles comprises dissolving cobalt chloride hexahydrate and surfactant in mixture of deionized water and absolute ethanol to obtain solution A; dissolving sodium hydroxide in deionized water to obtain solution B; dissolving sodium borohydride in deionized water to obtain solution C; reacting solutions A, B, and C in autoclave; and carrying out hydrothermal reaction to obtain cobalt nanoparticles.    USE - Preparation of cobalt nanoparticles used for magnetic recording materials, magnetic fluid, permanent magnet, wave-absorbing hard alloy, catalytic materials, or in ceramic and solar battery.    ADVANTAGE - The method has controllable reaction conditions, thus capable of producing cobalt nanoparticles with diameter of 250-900 nm. It has readily available raw materials, simple equipment requirement, low cost, simple operation, and has fast and efficient features. The cobalt nanoparticle product has regular morphology, uniform particle size, good dispersibility, controllable size, high yield, good stability, and suitable for large-scale industrial production.
NOVELTY - Manufacture of wavelength conversion device (1) involves producing nanoparticles of a perovskite-type oxide fluorescent substance containing praseodymium, calcium, strontium and/or titanium by carrying out hydrothermal reaction in water in subcritical or supercritical state, providing a film containing nanoparticles on a substrate (2), and forming a wavelength conversion layer (3) which converts ultraviolet light into reduced light.    USE - Manufacture of wavelength conversion device (claimed) used for photovoltaic apparatus e.g. solar cell.    ADVANTAGE - The method economically provides wavelength conversion device having high efficiency and reliability, and excellent durability. Since a perovskite type oxide fluorescent substance is used, the wavelength conversion device with excellent thermal and chemical stability is provided.    DESCRIPTION OF DRAWING(S) - The drawing shows the structure of the wavelength conversion device.    Wavelength conversion device (1)    Substrate (2)    Wavelength conversion layer (3)    Ultraviolet-ray (A)    Red fluorescence (B)
NOVELTY - A positive electrode (2) contains a conductive polymer as a positive electrode active material. The median diameter of particles of the conductive polymer is 5 mu m or less.    USE - Positive electrode is used for electrical storage device (claimed). Uses include but are not limited to portable PC, mobile telephone, portable information terminal, hybrid electric vehicle, electric vehicle, fuel cell electric vehicle, lithium secondary battery.    ADVANTAGE - The electrical storage device using the positive electrode has excellent weight power density, cycling characteristics and capacitance density per active material weight.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of positive electrode;    (2) positive electrode active material;    (3) manufacture of positive electrode active material; and    (4) electrical storage device.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of electrical storage device.    Electrical power collectors (1)    Positive electrode (2)    Electrolyte layer (3)    Negative electrode (4)
NOVELTY - The supply vessel (10) has a metal container (12) defining an enclosable interior volume including interior surface structure. The interior surface structure is coated with an ultra-high purity effective polyperfluoroalkoxyethylene coating. The ultra-high purity effective polyperfluoroalkoxyethylene coating has a thickness in a range of from 15 to 50 mils. The container is additionally coated with the ultra-high purity effective polyperfluoroalkoxyethylene coating on exterior surfaces.    USE - Supply vessel for storage and dispensing of ultra-high purity chemical reagents such as solvents, chemical precursors, photoresists, cleaning agents, dopant materials, organometallic reagents, or other chemicals requiring use at ultra-high purity. Can be used as a component of a wide variety of ultra-high purity chemical reagent-utilizing systems such as ultra-high purity deionized water dispensing apparatus and semiconductor manufacturing tool e.g., for semiconductor processing, fabrication of solar cells, manufacture of flat-panel displays, synthesis of nano materials.    ADVANTAGE - The ultra-high purity effective polyperfluoroalkoxyethylene coating on the interior metal surface structure is effective to maintain deionized water filling the ampoule.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a supply vessel.    Supply vessel (10)    Metal container (12)    Flanged base member (14)    Cover (16)    Mechanical fastener (18)
NOVELTY - The method involves selecting a base material, performing magnetic control sputtering at room temperature on a base material for preparing a silver film, and carrying out insitu annealing of the silver film to form a core particle. A thin film solar battery silver/aluminum core-shell type composite nano particle trapping structure is formed by a layer of nanometer particles for a solar battery device.    USE - Thin film solar battery silver/aluminum core shell type composite nano particle trapping structure preparation method.    ADVANTAGE - The method enables adjusting light extinction peak position in range of 350 to 700 nm and broadening spectrum half height width for making a thin film solar battery silver/aluminum core shell type composite nano particle trapping structure that can improve photoelectric conversion efficiency of a thin film solar battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating a thin film solar battery silver/aluminum core shell type composite nano particle trapping structure preparation method.'(Drawing includes non-English language text)'
NOVELTY - The method comprises mixing 20-50 wt.% of a polymer particle with 50-80 wt.% of a pore-forming agent, extruding the mixture through an extruder to form a sheet, uniaxially/biaxially stretching the extruded sheet to form a porous separating membrane, and removing the pore-forming agent from the membrane using a solvent. The concentration of the pore-forming agent in the solvent is less than or equal to 0.3 wt.%. The membranous polymers particle is a polyolefin based material. The solvent is pure after the removal step of the pore forming agent. The porogen concentration of the solvent is less than or equal to 0.06 wt.%.    USE - The method is useful for manufacturing a porous separation membrane, which is useful in an electrochemical device (all claimed) such as a primary battery, a fuel cell, a solar cell, a supercapacitor device and a lithium secondary battery including a lithium metal secondary battery, lithium-ion secondary battery, and lithium polymer secondary battery or the lithium-ion polymer secondary battery.    ADVANTAGE - The method is capable of economically manufacturing the porous separation membrane with excellent porosity and gas permeability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for:    (1) a porous separation membrane; and    (2) an electrochemical device.
NOVELTY - Metal oxygen battery cell (200A) comprises: an active metal anode (110); a cathode for electro-reducing molecular oxygen; and a non-aqueous liquid oxygen carrying compound (OCC) in contact with the cathode.    USE - Used as metal oxygen battery cell.    ADVANTAGE - The metal oxygen battery cell achieves very high energy density.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) using OCC for delivering molecular oxygen to the cathode of an active metal battery cell, comprising providing the metal oxygen battery cell and providing a liquid organofluorine or liquid siloxane compound as the molecular OCC in contact with the battery cell cathode; and    (2) replenishing OCC for use in an active metal oxygen flow cell battery, comprising circulating the OCC nearby the cathode by which at least a portion of the molecular oxygen is electro-reduced during cell discharge, and replenishing the partially or fully spent OCC in an oxygen containing environment remote from the cathode.    DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the battery cell.    Active metal anode (110)    Second porous body layer (122)    First porous body layer (124)    Metal oxygen battery cell (200A)    Cell casing (230A)
NOVELTY - The manufacturing method involves forming the opening portion (30) in the base material for vapor deposition rate detection. The deposition source (18) is provided to enable the vicinity of the surface which forms the compound semiconductor layer (19,20). The base material is pinched, and a vapor deposition rate detection unit (21-23) is provided in the position facing deposition source. The compound semiconductor layer forming material is supplied from deposition source to the vapor deposition rate detection unit through opening portion for measuring vapor deposition rate.    USE - Manufacturing method of compound solar cell.    ADVANTAGE - The vapor deposition rate can be controlled effectively and accurately regarding the distance between the base material and the deposition source. Thus the compound solar cell with stable quality is manufactured effectively.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view of the vacuum evaporation system. (Drawing includes non-English language text)    Base material unwinding chamber (11)    Deposition source (18)    Semiconductor layer (19,20)    Vapor deposition rate detection unit (21-23)    Opening portion (30)
NOVELTY - Manufacture of cobalt nitride or iron nitride involves mechanochemical reaction of cobalt II oxide or iron III oxide, and hexagonal crystal boron nitride.    USE - Manufacture of cobalt nitride or iron nitride used as substitute compound of rare earth magnet e.g. nitridation magnet, and noble metals e.g. platinum used as catalyst of fuel cell.    ADVANTAGE - The method economically provides cobalt nitride or iron nitride with favorable storage stability at normal temperature, by simple process.
NOVELTY - Copper in the aqueous solution of copper salt is reduced by adding reducing agent (27) is added to aqueous solution of copper-salt (23) comprising amine group-containing compound (I) having 2 or more amine groups per molecule, and hydrocarbon chain-containing compound (II) having carbon number of 4 or less, to obtain copper nanowire (1).    USE - Manufacture of copper nanowire used for transparent conductive film, fuel cell, paste for die-bonding, lithium-ion secondary batter, and high thermal conductive material (all claimed).    ADVANTAGE - The method enables manufacture of copper nanowire by a simple process.    DETAILED DESCRIPTION - Copper in the aqueous solution of copper salt is reduced by adding reducing agent (27) is added to aqueous solution of copper-salt (23) comprising amine group-containing compound of formula (I) having 2 or more amine groups per molecule, and hydrocarbon chain-containing compound of formula (II) having carbon number of 4 or less, to obtain copper nanowire (1).    R1-R4=H, alkyl or alkenyl.    INDEPENDENT CLAIMS are included for the following:    (1) transparent conductive film, which has copper nanowire in transparent matrix, and transparent base material;    (2) fuel cell, which has copper nanowire as electrode or catalyst;    (3) paste, which has copper nanowire;    (4) lithium-ion secondary battery, which as copper nanowire as negative electrode electrical power collector; and    (5) high thermal conductive material, which is obtained by dispersing copper nanowire into thermal conductive filler.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view illustrating manufacture of copper nanowire. (Drawing includes non-English language text)    Copper nanowire (1)    Container (21)    Aqueous solution of copper salt (23)    Reducing agent (27)
NOVELTY - The apparatus has a susceptor which comprises multiple susceptor bars (3) with predetermined width (W), to be separated from each other with a fixed gap (S). Multiple susceptor blocks (5) are protruded in an upper portion of each susceptor bar and are contacted with a poly-silicon film (1) which is supported by the susceptor. A transportable heating lamp (2) of the susceptor is moved from an upper portion of the susceptor along a one-way direction. The susceptor includes material such as quartz, silicon carbide, sapphire and graphite.    USE - Apparatus for recrystallizing polycrystalline silicon wafer used for manufacturing solar cell.    ADVANTAGE - The cracking of the silicone by the susceptor can be avoided. The grain size of the polycrystalline silicon wafer can be reduced. The area in which the susceptor and poly-silicon film contacts can be minimized.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for recrystallizing silicon wafer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon wafer recrystallizing apparatus.    Poly-silicon film (1)    Transportable heating lamp (2)    Susceptor bar (3)    Susceptor block (5)    Fixed gap (S)    Predetermined width (W)
NOVELTY - The mask has a main portion which is provided with a film. The adhesive is coated in the rear side of film. The strip-shaped film band (100) is attached to the portions of substrate (200) except the substrate opening portion using an adhesive, so as to form a mask pattern.    USE - Film band type mask for depositing material on large size substrate, used during manufacturing process of display, semiconductor device, solar cell, organic LED (OLED) pixel and OLED lamp.    ADVANTAGE - The strip-shaped film band can be easily attached with the substrate and the mask can be conveniently arranged in substrate. The material deposition process can be performed easily at low cost. The manufacturing cost of the mask can be reduced. The increase in the total weight of the mask can be suppressed by attaching the film band with the substrate, so that the mask can be lifted easily. The attachment and detachment of mask can be facilitated.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the film band type mask.    Film band (100)    Substrate (200)
NOVELTY - The manufacturing method involves laminating a reflection prevention layer (4) with a high refractive index layer (4a) and a low refractive index layer (4b) on the main surface of a transparent substrate (3). A base layer (5) is simultaneously formed in the other main surface of the transparent substrate. A transparent conductive layer (6) is formed on the base layer. The low-refractive-index layer with a refractive index lower than the transparent substrate, is formed on the high refractive index layer.    USE - Manufacturing method for a substrate with a transparent conductive layer for a solar cell and a photosensor, such as a photoelectric conversion element, a touchscreen and a display.    ADVANTAGE - Simple and economical manufacturing of the substrate with the transparent conductive layer is enabled. Light transmittance of the substrate is improved. Photoelectric conversion efficiency of the photoelectric conversion element is increased.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method for a photoelectric conversion element.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a substrate with a transparent conductive layer.    Substrate (1)    Transparent substrate (3)    Reflection prevention layer (4)    High refractive index layer (4a)    Low refractive index layer (4b)    Base layer (5)    Transparent conductive layer (6)
NOVELTY - The method involves providing a source substrate (100), and performing an etching process to form recesses (150) on one side (102) of the substrate. The recesses are arranged in the region of the semiconductor devices and between the recesses, and the walls of recesses are formed within the range for severing the substrate into separation areas (140). A metallic layer is formed on the side of substrate with recesses and walls. An etching process is carried out for cutting the substrate in the separation areas and forming isolated semiconductor devices.    USE - Method for producing isolated semiconductor devices such as LED e.g. infrared LED (IRED), or solar cells.    ADVANTAGE - An improved method for producing isolated semiconductor devices in an inexpensive and rapid manner is provided. The substrate has relatively high stability. The separation can be carried out without mechanical stress or crystal damage of the semiconductor components. Hence semiconductor elements with relatively small thickness can be formed efficiently. The process can be carried out in an economical manner, without using an expensive auxiliary substrate for stabilization. Good heat dissipation can be achieved, and the components can be operated with higher performance and same efficiency.    DESCRIPTION OF DRAWING(S) - The drawings show a front sectional view of the substrate with a wear layer and an intermediate layer, and a front sectional view of the substrate after the structuring of intermediate layer as separate layer portions for production of semiconductor devices.    Source substrate (100)    Side of substrate (102)    Wear layer (112)    Separation area (140)    Recess (150)
NOVELTY - Crystalline silicon solar cell diffusion method involves adding dried silicon wafers to diffusion furnace comprising laser diffusion unit comprising horizontal scanning and vertical scanning, introducing nitrogen gas, increasing furnace temperature to 786 degrees C, introducing phosphorus oxychloride, oxygen and nitrogen with different flow rates for predetermined diffusion time.    USE - Crystalline silicon solar cell diffusion method (claimed).    ADVANTAGE - The method efficiently provides crystalline silicon solar cell having high photoelectric conversion efficiency by economical process in short period of time.    DETAILED DESCRIPTION - Crystalline silicon solar cell diffusion method involves adding dried silicon wafers to diffusion furnace comprising laser diffusion unit comprising horizontal scanning and vertical scanning, introducing nitrogen gas, increasing furnace temperature to 786 degrees C, introducing phosphorus oxychloride at 1500 ml/minute, oxygen at 300 ml/minute and nitrogen at 7 L/minute for 13 minutes, increasing temperature to 826-838 degrees C, maintaining flow rate of phosphorus oxychloride, oxygen and nitrogen at 1500 ml/minute, 2900 ml/minute and 5 L/minute, respectively with diffusion time for 10 minutes and maintaining temperature at 820 degrees C and flow rate of phosphorus oxychloride, oxygen and nitrogen at 2000 ml/minute, 2900 ml/minute and 4 L/minute, respectively with diffusion time of 10 minutes.
NOVELTY - Manufacture of fullerene derivative (IV) involves reacting sulfur-containing salt (I) and fullerene in presence of a base.    USE - Manufacture of fullerene derivative used as material for active layer of photoelectric conversion element for organic thin-film solar cell for organic thin-film solar cell module, and organic thin-film transistor for electrophoresis display, liquid crystal display and organic electroluminescent display.    ADVANTAGE - The method efficiently and economically provides fullerene derivative at reduced reaction temperature.    DETAILED DESCRIPTION - Manufacture of fullerene derivative of formula (IV) involves reacting sulfur-containing salt of formula (I) and fullerene in presence of a base.    R1,R2=1-30C organic group;    Z=group of formula (i) or (ii);    R3=group of formula (iii);    Ar1=6-30C aryl, 2-30C alkynyl, 2-30C heteroaryl or 2-30C alkenyl (all optionally substituted);    n=1-3;    Y(power)n-=n-valent anion;    R7=carbonyl and bivalent group other than vinylene group;    R8=1-30C organic group;    p,q,r=0 or 1;and    ring A=fullerene skeleton.    When r is 1, then p is 1. INDEPENDENT CLAIMS are included for the following:    (1) sulfur-containing salt of formula (I-1);    (2) sulfur-containing salt, which is of formula (XIII); and    (3) sulfur-containing compound, which is of formula (XIV).    X-=monovalent anion.
NOVELTY - Manufacture of electroconductive component (10,20) involves processing substrate with mixed gas comprising nitrogen gas, hydrogen gas and oxygen gas by atmospheric pressure plasma process and forming electroconductive layer (14) on surface(s) of substrate using coating liquid containing alkoxysilane compound and silver by sol gel process. The content of oxygen gas is 0.01 volume% or less.    USE - Manufacture of electroconductive component. Uses include but are not limited to touchscreen, liquid crystal display, organic electroluminescent display and solar cell.    ADVANTAGE - The method efficiently provides electroconductive component having reduced surface resistance with high productivity.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of electroconductive component.    Electroconductive component (10,20)    Support component (12)    Electroconductive layer (14)    Intermediate layer (24)
NOVELTY - The pattern presentation apparatus comprises a board material (52), which is provided on a surface (52f) of a solar cell (51). An illumination unit supplies the electric power obtained by the solar cell and irradiates light to the pattern (52L) from the end surface (52e) of the board material. A frame (1f) holds the solar cell and the board material. The solar cell light receives the exterior light after transmitting the board material in the surface and generates electric power. The frame fixes the solar cell by gripping the periphery of the solar cell for sliding.    USE - Pattern presentation apparatus for presenting patterns, such as a name of the resident on a doorplate of a building.    ADVANTAGE - The pattern presentation apparatus comprises illumination unit supplies the electric power obtained by the solar cell and irradiates light to the pattern from the end surface of the board material, and thus prevents failure arise over a long term, and easily maintain appropriate operation of the pattern presentation apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a pattern presentation apparatus.    Frame (1f)    Solar cell (51)    Board material (52)    End surface (52e)    Surface (52f)    Pattern (52L)
NOVELTY - The battery (100) has a winding electrode body (80) comprising a positive electrode i.e. positive electrode sheet (10), and a negative electrode i.e. negative electrode sheet (20), and a non-aqueous electrolyte provided in a battery case (50). The case is equipped with an electric current interruption mechanism (30), which is operated at time of inner pressure rise of the case. Ratio of volume of the non-aqueous electrolyte with respect to volume of a gap of the electrode body is in certain value. The non-aqueous electrolyte includes gas forming agent.    USE - Non-aqueous-electrolyte secondary battery i.e. lithium ion secondary battery, for use as a power supply for a motor i.e. electric motor, in a vehicle i.e. motor vehicle such as hybrid vehicle, plug-in hybrid motor vehicle, electric vehicle, fuel cell electric vehicle, bicycle, electric-power assisted bicycle and electric wheelchair. Can also be used for be used for a personal computer and a portable terminal.    ADVANTAGE - The secondary battery is reliable in structure, and combines tolerance at the time of overcharge and high battery performance such as outstanding cycling characteristics and input-output characteristics.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a non-aqueous-electrolyte secondary battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a non-aqueous-electrolyte secondary battery.    Positive electrode sheet (10)    Negative electrode sheet (20)    Electric current interruption mechanism (30)    Battery case (50)    Winding electrode body (80)    Non-aqueous-electrolyte secondary battery (100)
NOVELTY - Preparation of a zinc oxide nanomaterial comprises uniformly spreading zinc powder on an induction heating device for heating surface of a graphite sheet; placing a sensor heating device at less than 30 mm above or below the graphite paper; and starting the induction heating device.    USE - Method for the preparation of a zinc oxide nanomaterial (claimed) used for a short wave laser, a secondary battery, a chemical sensor, a solar battery, and a rubber additive.    ADVANTAGE - The method is simple, has high conversion rate, and does not need a complex separating program.
NOVELTY - An adhesive tape (10) comprises base material (11) which is subjected to mold release process, and adhesive layer (12) provided on the surface where the mold release process of base material is not carried out. The adhesive layer is stuck by mold-release-processed surface of base material such that the peeling is possible, and through-hole (10a) formed along the thickness direction.    USE - Adhesive tape is used for fixing photovoltaic cells in solar cell module.    ADVANTAGE - The adhesive tape has excellent adhesiveness.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of adhesive tape.    Adhesive tape (10)    Through-hole (10a)    Base material (11)    Surfaces (11a,11b)    Adhesive layer (12)    Adhesive face (12a)
NOVELTY - A silver compound and alcohol solvent are mixed, to obtain silver compound-alcohol slurry. To the resulted product aliphatic hydrocarbon amine is added, to obtain complex compound containing silver compound and amine. The resulted complex compound is heated and thermally decomposed, to obtain silver nanoparticles.    USE - Manufacture of silver nanoparticles used for forming electroconductive film and electroconductive wiring. Uses include but are not limited to electromagnetic wave control material, circuit board, antenna, heat sink, liquid crystal display, an organic electroluminescent display, field emission display, solar cell, organic transistor, electronic paper, etc.    ADVANTAGE - The silver nanoparticles having excellent electroconductivity are prepared by safe and simple method within short period of time.
NOVELTY - A copper-gallium alloy sputtering target comprises copper-gallium alloy particle (10), an island-like sodium compound grain (20), and copper-gallium alloy particle covered with sodium containing material (30).    USE - Copper-gallium alloy sputtering target is used for forming light absorption layer of copper-indium-gallium-selenium quaternary alloy solar cell.    ADVANTAGE - The copper-gallium alloy sputtering target is efficiently manufactured with suppressed crack and arc discharge.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of copper-gallium alloy sputtering target.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of copper-gallium alloy sputtering target.    Copper-gallium alloy particle (10)    Sodium compound grain (20)    Copper-gallium alloy particle covered with sodium containing material (30)    Sodium containing material (30a)    Copper-gallium alloy (30b)
NOVELTY - A sputtering target comprises 57-68 wt.% selenium and remainder of molybdenum and unavoidable impurities, and has structure including primary phase containing molybdenum selenide and secondary phase containing molybdenum selenide.    USE - Sputtering target is used for forming molybdenum selenide layer and solid lubricant layer used in cadmium-indium-gallium selenide for thin-film solar cell.    ADVANTAGE - The sputtering target has high crack resistance. The solar cell containing the film formed using the target has high energy-conversion efficiency.    DETAILED DESCRIPTION - A sputtering target comprises 57-68 wt.% selenium and remainder of molybdenum and unavoidable impurities, and has structure including primary phase containing molybdenum selenide (MoSe2) and secondary phase containing molybdenum selenide (Mo3Se4). An INDEPENDENT CLAIM is included for manufacture of sputtering target.
NOVELTY - The evaporation source has a crucible unit (100) that is provided with nozzle heaters and a crucible made of tungsten, molybdenum, quartz and ceramics. Multiple alternant nozzles are connected to a linear conduit line (210) which is connected to an upper crucible cover (115) of the crucible. The nozzle heater is provided with a tungsten bar which is arranged adjacent to linear conduit line for covering the crucible. A connecting element is used to detachably connect the linear conduit line and crucible.    USE - Bulk high temperature evaporation source for evaporating metal such as copper, indium and gallium during manufacturing of solar cell, semiconductor device and display.    ADVANTAGE - Since the nozzle and linear conduit line are altogether made of same material, the stress caused by difference of the coefficient of thermal expansion of the crucible can be prevented. The assembly, material replacement, maintenance and repair of the evaporation source can be facilitated easily.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the evaporation source.
NOVELTY - The free energy device has anaerobic reactor (200) in which the flow control bath (100) is set for treating sewage. The membrane separation bioreactor makes the supernatant liquid to be flown to the anaerobic reactor. The basic material is made of ammonia, magnesium hydroxide, sodium hydroxide, calcium carbonate, and sodium carbonate.    USE - Self-supporting sludge free energy device for treating sewage in agriculture area, farming field, fishing village, urban district, island area, and mountain area.    ADVANTAGE - The sewage can be treated effectively and easily without consuming more time and cost. The loss of hydrogen gas during the driving of membrane bio-reactor can be prevented. The separate process about the sludge treatment becomes unnecessary. The feces of the domestic sewage can be reused effectively. The sludge free energy device can be strengthened.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the self-supporting sludge free energy device.    Flow control bath (100)    Anaerobic reactor (200)    Treated water storage tank (400)    Gas holder (500)    Fuel cell (600)
NOVELTY - Transition metal nanoparticles with sizes of 1-3 nm are synthesized by dissolving metal precursors and surfactant at a ratio of 1:2.5 in organic solvent until complete dissolution, adding 9.4 M reducing agent to solution, adding capping agent with continuous stirring in which ratio metal:capping agent is 1:10-1:40, refluxing at 70-130 degrees C, cooling solution at 27-32 degrees C, and adding anti-solvent to precipitate ultra-small uniform-sized transition metal nanoparticles.    USE - Synthesis of transition metal nanoparticles for selective hydrogenation or reduction of large organic molecule or natural product synthesis (all claimed). Can also be used in catalysis and fuel cells.    ADVANTAGE - Transition metal nanoparticles have tunable shape, uniform size, and better catalytic activity.    DESCRIPTION OF DRAWING(S) - The drawings show transmission electron microscope images of Rh-thiol nanoparticles in which each nanoparticle has size of 0.6 mm or 3.12 nm.
NOVELTY - A resin composition comprises near-infrared absorber, which is microparticles comprising copper phosphonate (I), antioxidant chosen from hindered phenolic antioxidant and phosphorus-based antioxidant (II) bonded to phosphorus atoms in molecule and having 1 or more structures (III) bonded to phosphorus atoms in molecule, and resin.    USE - Resin composition is used for forming intermediated film for laminated glass (all claimed) for motor vehicle, building, and solar cell.    ADVANTAGE - The resin composition has reduced yellowing property, and heat resistance.    DETAILED DESCRIPTION - A resin composition comprises near-infrared absorbent, which is microparticles comprising copper phosphonate of formula (I), antioxidant chosen from hindered phenolic antioxidant and phosphorus-based antioxidant of formula: -(-O-R) (II) bonded to phosphorus atoms in molecule and having 1 or more structures of formula (III) bonded to phosphorus atoms in molecule, and resin.    R1=-CH2CH2-R';    R'=H, alkyl or fluoroalkyl;    R2-R4= alkyl;    R5-R8=hydrogen or alkyl;and    R=alkyl.    INDEPENDENT CLAIMS are included for the following:    (1) intermediate film, which is obtained using the resin composition; and    (2) laminated glass, which has the intermediate film.
NOVELTY - A coating composition comprises silica precursor, neutral catalyst, alcohol and non-fluorine silane-based organic compound.    USE - Coating composition is used for coating window used in construction field, solar cell and automobile applications.    ADVANTAGE - The environmentally-friendly coating composition has excellent transparency, self-cleaning property and water repellency, with reduced carbon dioxide emission.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of coating composition, which involves forming a silica nanostructure on a base material using silica precursor, neutral catalyst, alcohol and water, and coating the non-fluorine silane-based organic compound on obtained product.
NOVELTY - A glass sheet laminate comprises glass sheet (11) having thickness of 10-500 mu m and cured film (17) formed from curable composition containing fluorine-containing polyarylene prepolymer (A) having crosslinkable functional group.    USE - Glass sheet laminate is used for guard plate and semiconductor device (all claimed). Uses include but are not limited to liquid crystal display, portable terminal, solar cell and light-emitting diode.    ADVANTAGE - The glass sheet laminate has excellent protection performance, durability, and photoelectric conversion efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of glass sheet laminate.    DESCRIPTION OF DRAWING(S) - The drawing shows sectional view of thin-film transistor.    Semiconductor device (10)    Glass sheet (11)    Gate electrode (12)    Source electrode (13)    Cured film (17)
NOVELTY - A positive electrode comprises electroconductive polymer particle having flat shape as active material.    USE - Positive electrode is used for electrical storage device e.g. capacitor (claimed). Uses include but are not limited to portable personal computer, mobile telephone, portable information terminal, hybrid electric vehicle, electric vehicle and fuel cell electric vehicle.    ADVANTAGE - The positive electrode provides electrical storage device having high energy density and excellent cycling characteristics, average aspect ratios and capacitance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) electrical storage device, which comprises negative electrode and positive electrode opposingly placed on both sides of electrolyte layer; and    (2) manufacture of slurry for positive electrode, which involves ball milling active material particle and binder comprising conductive polymer.
NOVELTY - A complex oxide sintered compact contains indium, zirconium, hafnium, and oxygen as main elements. The atomic ratio of content of zirconium with respect to total content of indium, zirconium and hafnium is 0.05-4.5. The atomic ratio of hafnium with respect to total content of indium, zirconium and hafnium is 0.0002-0.15.    USE - Complex oxide sintered compact is used for sputtering target for manufacturing oxide transparent conductive film for laminate substrate for element e.g. solar cell, liquid crystal display, flexible plasma display and touchscreen for electronic device (all claimed) e.g. mobile device.    ADVANTAGE - The complex oxide sintered compact provides lightweight electronic device. The oxide transparent conductive film manufactured using complex oxide sintered compact has low resistance and optical absorption property large wavelength range of infrared region from visible region.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) sputtering target;    (2) manufacture of oxide transparent conductive film;    (3) oxide transparent conductive film; and    (4) laminate substrate.
NOVELTY - A sputtering target is a sintered component of composition containing 0.6-8 atomic% aluminum and/or gallium, 0.1 atomic% or more silicon, and remainder of zinc and unavoidable impurities. The sum total content of aluminum, gallium and silicon is 33 atomic% or less, with respect to the total amount of metal components. The complex oxide particles of zinc and silicon in the sintered component have particle diameter of 5 mu m or less.    USE - Sputtering target is used for zinc oxide-based transparent film used as light transmissive protective film. Uses include but are not limited to electronic paper, solar cell, optical disk, touchscreen element, liquid crystal display element, electroluminescent display element, electrophoresis-type display element and toner display element.    ADVANTAGE - The sputtering target is efficiently manufactured, with suppressed generation of abnormal discharge. The zinc oxide-based transparent oxide film having excellent gas-barrier property, flexural strength and heat conductivity, is obtained by the sputtering target with suppressed generation of cracks.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of sputtering target.
NOVELTY - Manufacture of tempered glass substrate (G) involves melting glass-making feedstock, molding molten glass into plate-shaped glass substrate having long-side dimension of 1000 mm or more and short-side dimension of 500 mm or more, and forming compressive-stress layer on surface of glass substrate by performing ion-exchange treatment in the state which made the glass substrate incline.    USE - Manufacture of tempered glass substrate (claimed) used for cover glass. Uses include but are not limited to large-sized television, digital signage, touch screen, electronic blackboard, solid-state image sensor and solar cell.    ADVANTAGE - The tempered glass substrate is manufactured efficiently with excellent mechanical strength, by simple method.    DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of tool having tempered glass substrate. (Drawing includes non-English language text)    Support tool (2)    Inclination support portion (4,5)    Inclination support portion (3ea,3eb)    Slip prevention frame material (3ha,3hb)    Glass substrate (G)
NOVELTY - A redox flow cell consists of a reaction cell with two polar-specific chambers (1,2) for catholyte and anolyte, each communicating with a liquid reservoir and separated by an ion-exchange membrane. The chambers are each filled with redox-active components as substance or dissolved in water or an organic solvent, dissolved conducting salts, and other additives. The redox-active component is a high-molecular-weight compound. The membrane is a size-exclusion membrane (3) for separating solvent and dissolved-form high-molecular-weight component.    USE - Redox flow cell is used for electrical-power storage.    ADVANTAGE - The redox flow cell has excellent durability and long service life, is environmentally-friendly, and does not incorporate expensive, toxic and/or endangering electrolytes.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the redox flow cell.    Polar-specific chambers (1,2)    Size-exclusion membrane (2)    Inlet connection (4)    Outlet connection (5)    Current conductor (6)
NOVELTY - The coating device (10) comprises a chamber (15), which is connected to an evacuation unit for creating a vacuum. A vaporization unit (22) and a high frequency ionization unit (29) are arranged in the chamber. A high frequency coil (30) is provided, which is in communication with the vaporization unit to stimulate and to ionize the molecules of the vapor. A channel arrangement (33) with multiple channels (34) made of ceramic is provided for discharging the molecules from the vaporization unit in the direction of a substrate (11). A holder (12) is provided for the substrate.    USE - Coating device for coating large-area substrates, such as a semiconductor monocrystalline plate, a metal-coated non-metallic plate and a non-metallic plate with non-metallic surface, for producing thin atomic layers for thin-film solar cells.    ADVANTAGE - Production of highly controlled thin layers is enabled. Efficient control of incidence energy of particles on the substrate is ensured. Efficient control of growing up conditions of the layers is enabled by selectively controlling the switching on and off of the coating operation.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for producing epitaxial layers.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a coating device.    Coating device (10)    Substrate (11)    Holder (12)    Chamber (15)    Vaporization unit (22)    High frequency ionization unit (29)    High frequency coil (30)    Channel arrangement (33)    Channel (34)
NOVELTY - A laminated film comprises protective layer and inorganic layer laminated on surface of base film in order. The protective layer contains urethane resin and block isocyanate as main component. The block isocyanate has dissociation temperature of 130 degrees C or less.    USE - Laminated film is used for packaging foodstuffs, pharmaceuticals, solar cell, organic electroluminescent element, electronic paper, semiconductor element and industrial commodities.    ADVANTAGE - The laminated film having excellent adhesiveness, gas-barrier property, durability, stability, homogeneous characteristics, and design property is manufactured economically and efficiently.
NOVELTY - Manufacture of polyimide film involves forming a polyimide precursor film by an electro-deposition process using a polyimide precursor solution composition, and imidating. The polyimide precursor solution composition contains polyamic-acid salt (I), in which content of amide system solvent in solvent is 5 %mass or less.    USE - Manufacture of polyimide film used as insulating layer of electronic circuit board, condenser insulating film, insulating layer of microelectromechanical systems, primer of wire-coating material, fuel cell component, metal rust preventive film, heat resistant paint, heat-resistant coating, metal/resin joining, coating of pad, and coating of sliding component.    ADVANTAGE - The method enables stable manufacture of polyimide film having excellent heat resistance, chemical resistance and surface smoothness, with reduced impact on environmental pollution.    DETAILED DESCRIPTION - Manufacture of polyimide film involves forming a polyimide precursor film by an electro-deposition process using a polyimide precursor solution composition, and imidating. The polyimide precursor solution composition contains polyamic-acid salt of formula (I), in which content of amide system solvent in solvent is 5 %mass or less.    A=tetravalent aromatic or aliphatic group;    B'=bivalent aromatic or aliphatic group;and    X1,X2=basic compounds.    An INDEPENDENT CLAIM is included for electro-deposition coating material, which contains the polyamic-acid salt (I) and 5 %mass or less amide system solvent in solvent.
NOVELTY - An ultraviolet curable resin composition comprises polymer (A) having 2 or more (meth)acrylate groups, and photoinitiator (B). The polymer has number average molecular weight of 10000 or more and dispersion degree of 1.5 or less. The ultraviolet curable resin composition provides optical laminated component, which is bonded together with glass having thickness of 300 mu m or less and transparent plastic having thickness larger than glass thickness.    USE - Ultraviolet curable resin composition is used for forming cured material for optical laminated component (all claimed) used in flat panel display. Uses include but are not limited to mobile telephone, smart phone, tablet information terminal, solar cell, lithium ion battery, cover glass, digital signage, touch screen, electronic paper, liquid crystal display, etc.    ADVANTAGE - The ultraviolet curable resin composition has excellent thermal shock-proof property, shock-resistant absorptivity, light resistance, heat resistance and moisture resistance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) cured material, which is obtained by curing the ultraviolet curable resin composition; and    (2) optical laminated component, which consists of the cured material.
NOVELTY - An insulating thermally-conductive filler dispersion composition comprises polyamic acid obtained by reacting biphenyl tetracarboxylic dianhydride and diamino diphenylether, 35-70 vol.% insulating thermally conductive filler covered using aluminum nitride or aluminum oxide, and having specific surface area of 1.5-5 m2/g, volume average particle diameter of 1-8 mu m, and uniformly distributed particles having particle diameter (d10) of 0.5 mu m or more, and particle diameter (d90) of 15 mu m or less, and solvent.    USE - Composition is used for insulating thermally-conductive polyimide resin composition for forming insulating film for metal heat sink and metal base circuit (all claimed). Uses include but are not limited to hybrid motor vehicle, fuel cell electric vehicle, motor component, high-density and high-intensity light emitting diode, mobile telephone, portable terminate, base station apparatus of communication system, personal computer, and semiconductor manufacturing apparatus.    ADVANTAGE - The insulating thermally-conductive filler dispersion composition has excellent thermal conductivity. The insulating film obtained using insulating thermally-conductive filler dispersion composition has high dielectric breakdown voltage.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of insulating thermally-conductive polyimide resin composition, which involves coating insulating thermally-conductive filler dispersion composition, and heating;    (2) insulation film, which is obtained using insulating thermally-conductive polyimide resin composition;    (3) metal heat sink, which has the insulating film comprising insulating thermally-conductive polyimide resin composition; and    (4) metal base circuit board, which has the insulating film comprising insulating thermally-conductive polyimide resin composition.
NOVELTY - The method involves kneading an electrically conductive material, a binder and an oxalate complex compound i.e. lithium oxalate borate, in a prescribed solvent to form a kneaded material. A positive electrode active material is mixed with the kneaded material to form another kneaded material. A positive electrode active material layer is formed on a positive electrode electrical power collector by applying the latter kneaded material to produce a positive electrode. A non-aqueous electrolyte secondary battery (100) is constructed by utilizing the positive electrode.    USE - Method for manufacturing a non-aqueous electrolyte secondary battery i.e. lithium ion secondary battery, that is mounted in a vehicle. Uses include but are not limited to a plug-in hybrid motor vehicle, a hybrid vehicle, an electric vehicle, an electric lorry, a bicycle with a motor engine, an electric-power assisted bicycle, an electric wheelchair, an electric railway and a fuel cell electric vehicle.    ADVANTAGE - The battery is constructed by utilizing the positive electrode, so that effect of film formation agent addition can be exhibited appropriately, performance of the battery can be improved, and decomposition of a non-aqueous electrolyte, precipitation of lithium and elution of a metallic element can be suppressed, thus improving durability of the battery.    DETAILED DESCRIPTION - The binder is made of polymer material such as styrene-butadiene rubber (SBR), polyvinylidene fluoride (PVdF) or PTFE. The electrically conductive material is made of dibutyl phthalate (DBP) or acetylene black (AB). An INDEPENDENT CLAIM is also included for a non-aqueous electrolyte secondary battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a non-aqueous electrolyte secondary battery.    Battery case (50)    Case main body (52)    Cover body (54)    Positive electrode terminal (70)    Non-aqueous electrolyte secondary battery (100)
NOVELTY - In this invention, a cost-effective and effective selenization method at high process temperature above 550 DEG C is proposed for the p-type light-absorption layer of the Cu(Zn, Sn)Se2 (CZTSe) and Cu(In, Ga)Se2 (CIGSe) solar cells. The selenization above 550 DEG C has been difficult for using the selenium element. The selenium sources are selenide-based and composed of two compensation discs of (SnSe2+Se) and (CuSe2+Se) for the CZTSe system and a single compensation disc of (SnSe2+Se) for the CIGSe systems. With the utilization of our selenide-based compensation discs for the selenium source, we succeed in obtaining the p-type absorption layer without using (a) the toxic H2Se gas, (b) the highly volatile Se element, and (c) the highly explosive hydrazine solvent proposed by IBM Inc. Furthermore, the most important result of this selenide-based selenization technique is to obtain a dense and smooth absorption layer composed of large grains of 2-10 micro m, which can reduce the chance of charge trapping by grain boundary and is critical to have better photovoltaic efficiency.
NOVELTY - Synthesis of copper-zinc-tin-sulfur photosensitive thin film involves adding copper sulfate pentahydrate, heptahydrate zinc sulfate crystal and tin sulfate crystal in alcohol as organic solvent to obtain zinc sulfate solution (solution A); adding the solution A in flask, heating by argon gas, adding sodium sulfide solution, cooling to obtain copper-zinc-tin-sulfur solution (solution B); and heating solution B to 80-120 degrees C, gradually adding dispersant, after cooling, and dividing the solution B into upper and lower two layers, to obtain the copper-zinc-tin-sulfur photosensitive thin film.    USE - For synthesis of copper-zinc-tin-sulfur photosensitive thin film (claimed), used in solar cell.    ADVANTAGE - The process produces non-toxic and low cost copper-zinc-tin-sulfur (Cu2ZnSnS4) photosensitive thin film; has simple synthesis route without vacuum; and is fast, and environment friendly. The copper-zinc-tin-sulfur photosensitive thin film improves the solar cell performance; and has very good consistency and uniformity.    DETAILED DESCRIPTION - Synthesis of copper-zinc-tin-sulfur photosensitive thin film involves adding copper sulfate pentahydrate, heptahydrate zinc sulfate crystal and tin sulfate crystal in alcohol as organic solvent to obtain zinc sulfate solution whose molar concentration is 5-15 mol/l (solution A); adding the solution A in the flask, heating to 170-210 degrees C by argon gas, adding sodium sulfide solution, standing, naturally cooling to obtain copper-zinc-tin-sulfur solution with a particle (solution B); and heating the solution B to 80-120 degrees C, gradually adding dispersant, after cooling, dividing the solution B into upper and lower two layers, where the upper layer contains black liquid, that is a copper-zinc-tin-sulfur solution, and separating, to obtain the copper-zinc-tin-sulfur photosensitive thin film.
NOVELTY - A benzothiophene narrow band conjugated polymer (I) is new.    USE - Benzothiophene narrow band conjugated polymer used for organic solar battery.    DETAILED DESCRIPTION - A benzothiophene narrow band conjugated polymer of formula (I) is new. An INDEPENDENT CLAIM is included for preparation of benzothiophene narrow band conjugated polymer (I).
NOVELTY - An yttrium-vanadium oxide-based fluorescent powder is new, where the fluorescent powder is converted into an ultraviolet broadband infrared light emitting fluorescent powder excitation, at excitation spectrum of 270-400 nm and emission spectra of 1000-1100 nm.    USE - As fluorescent powder for solar battery (claimed).    ADVANTAGE - The fluorescent powder is used for producing solar battery having high light emission luminance, uniform grain size and good chemical stability and thermal stability. The fluorescent powder manufacturing method is simple; has no pollution; and has low cost.    DETAILED DESCRIPTION - An yttrium-vanadium oxide-based fluorescent powder of formula Y1-x-y-zVO4: Bi3+ xYb3+ yRz, where x, y, and z are mol coefficients, is new, where the fluorescent powder is converted into an ultraviolet broadband infrared light emitting fluorescent powder excitation, at excitation spectrum of 270-400 nm and emission spectra of 1000-1100 nm.    R=at least one Tb, Dy, Pr, Ce, Ho, Gd, Eu or Mn;    x=not less than 0.001 and not greater than 0.4;    y=greater than 0.0001 and less than 0.3;    z=greater than 0.0001 and not more than 0.3.    An INDEPENDENT CLAIM is included for preparation of the fluorescent powder.
NOVELTY - The utility model claims a solar battery sheet production equipment, one rectangular constant temperature plane radio frequency coil device, comprising a reaction chamber and two ends and high frequency power supply's high frequency magnetic field generating coil, said reaction chamber is divided into chamber and is set on the back end of the chamber and the chamber's vacuum chamber, is connected with said small chamber's front end for the coil's high frequency magnetic field is introduced in the vacuum chamber's coupling window's front chamber is provided with a coupling window's parallel fixing plate, said coil winding in the plane to form a rectangular spiral and is fixed on the upper fixing plate. This utility model adopts circular tube wound into rectangular planar spiral coil, high frequency power supply is added on the two ends of the rectangular, a rectangular planar coil can ensure the constant coil temperature, the plasma's density, so as to ensure process repeatability, the rectangular plane coil can make the constant temperature vacuum chamber body is made of metal material, which overcomes the quartz cavity is etched through's.
NOVELTY - Preparation of molybdenum-based alloy and graphene carbon material composite catalyst comprises ultrasonic dispersing graphene carbon material in 1-methyl-2-pyrrolidone at 20-30 degrees C for 1-3 hours, adding molybdenum nitrate solution to heavy metal and salt solution, mixing until uniform, adding sodium borohydride solid and reacting in hydrothermal reaction kettle at 20-200 degrees C for 4-48 hours.    USE - Method for preparing molybdenum-based alloy and graphene carbon material composite catalyst (claimed).    ADVANTAGE - Catalyst has good application prospect and economic benefit.    DESCRIPTION OF DRAWING(S) - The drawing shows a process flow diagram of molybdenum-based and graphene carbon material composite catalyst preparation (Drawing includes non-English language text).
NOVELTY - This utility model claims one kind of liquid flow battery's structure and it is composed of liquid flow frame's stack. The liquid flow frame structure comprises an anode flow frame and cathode flow frame, the anode flow frame and cathode flow frame are centre symmetric structures, and the anode flow frame and cathode flow frame are respectively comprises a flow frame and main flow pipe with the external liquid storage tank's inlet's said main flow pipe is set on the surface of the lateral frame's flow, the in turn is connected with the pressure stabilizing cavity, and toothed current limiting section, a snake-shaped flow passage and the distributing flow passage, the distribution flow channel is connected with the reaction area. The utility model's structure not only solves the problem that the single liquid flow is not uniform caused by voltage difference great's technical problem, the voltage difference between the single battery's small range, which greatly improves the stability and safety of vanadium cell's, but also effectively increases the impedance's conductive path's electrolyte reduces the bypass's self-discharge current is reduced, and prevents the electrolyte from the reaction side's region, improves the reaction efficiency's electrolyte.
NOVELTY - This utility model claims one kind of honeycomb light collecting type solar panel, comprising a photovoltaic battery chip, wherein the photovoltaic battery chip's honeycomb collecting plate is arranged at the bottom, each honeycomb light collecting monomer is set as upper big and lower small cone. Photovoltaic battery chip can effectively the incident light to the utmost extent to bottom's upper, improves the solar battery unit area's energy flow density solar energy's efficiency, improves the discharging efficiency's photovoltaic cell. In addition, the utility model is composed of honeycomb cell array, the area can be adjusted, it is suitable for all kinds of user, at the same time it has simple structure, easy manufacture, low cost and so on.
NOVELTY - Integrated feeding tank in preparing hydrogen by hydrolyzing device's layered heat-conducting drying's structure is composed of a shell, a liner integrated in top part's upper cylindrical sleeve sealing cover, a feeding pool, heat drying, air drying chamber, a gas outlet valve, a circulating water system and gas path system. Wherein, heat conducting drying frame can solve the heat transfer and gas drying problem's device, a drying tray's upper vent hole can be increased and the contact's gas dryer, a sealing cover and a feeding tank and a heat-conducting layer and the frame are integrated on the cylindrical sleeve up to realize the integration and rapid assembly function. By the electric control one-way valve precisely control amount so as to control the hydrogen production rate. Through the function's circulating water system improves the heat transfer and mass transfer device to realize the's makes full use of waste heat. This utility model is safe and reliable, wide work range, it can suitable for different process for preparing hydrogen by hydrolysing's hydrogen storage material, adjustable height, the working efficiency is high, and it can be matched with fuel cell's different requirements.
NOVELTY - The utility model claims a sea water desalting, salt and salt by-product and salt chemical, mudflat cultivation technology field, especially relates to one kind of tower type light gathering solar photo-thermal energy storage generating sea water desalting salt mudflat cultivation system. One side of the top end of the tower's heliostat field facing the sun's is provided with sunshine temperature-gathering device, the sunshine in collecting the top end's tower is provided with a storage tank, the lower part's energy storage tank in the solar collecting tower up one platform is provided with a heat exchange control device, electric control device and power generating device, an energy storage tank is connected with the heat exchange control equipment, heat exchange control device generating device, further is connected with the output cable in the power generating device is connected with power control device, seawater desalination plant or salt plant is equipped with an electric control cabinet, a power input cable and the power control device, the power control device up. The utility model is the tower type light gathering solar photo-thermal power generation, energy storage, light gathering solar photovoltaic power generation system and seawater desalting, salt and salt by-product and salt chemical, mudflat cultivation are organically combined together to form one of green and environment-friendly recycling economy industrial chain.
NOVELTY - Holmium-doped lanthanum trifluoride upconversion luminescent material comprises lanthanum trifluoride, holmium fluoride and ammonium fluoride or ammonium hydrogen fluoride. The mol ratio of lanthanum trifluoride and holmium trifluoride is 1:1-99:1. The total mole number of ammonium fluoride or ammonium hydrogen fluoride, lanthanum trifluoride and holmium trifluoride is 1-20%.    USE - The luminescent material is useful in solar cell conversion material and photocatalysis.    ADVANTAGE - The luminescent material has low excitation energy and rare earth ion energy difference, thus improving the energy transfer on upconversion process, improving probability of occurrence and electronic transition pathways, and increasing the upconversion luminescence efficiency.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for:    (1) preparing the holmium-doped lanthanum trifluoride upconversion luminescent material, comprising (a) taking lanthanum trifluoride and holmium trifluoride, adding ammonium fluoride or ammonium hydrogen fluoride, fully mixing the raw materials uniformly, reacting under the protection of nitrogen or argon gas atmosphere at 800-1300 degrees C for 2-10 hours; and    (2) use method of holmium-doped lanthanum trifluoride up-conversion luminescent material, comprising utilizing near infrared wavelength range of 800-1200 nm and/or near infrared light to excite the luminescent material.
NOVELTY - Synthesis of copper-zinc-tin sulfide quantum dot involves dissolving tin(II)ion salt in aqueous stabilizer which prevents tin(II)salt hydrolysis, then adding copper(II)ion and zinc(II)ion salts, dissolving the resultant product, adding mercapto compound, adjusting pH value of the mixed solution, then adding sulfur source aqueous solution, stirring, carrying out hydro-thermal reaction under microwave, cooling, washing the resultant product and drying.    USE - Synthesis of copper-zinc-tin sulfide quantum dot used as solar cell material.    ADVANTAGE - The method economically and environmentally-friendly provides nontoxic copper-zinc-tin sulfide quantum dot having improved structure with reduced energy consumption, by simple process.
NOVELTY - The method involves etching a crystal silicon surface, and partially printing crystal silicon of a shielding layer on a back surface. A double-side boron diffusion process is performed for removing the shielding layer and a boron silicon glass layer. A double-side anti-reflecting film is formed. A screen printing and sintering process is performed. The shielding layer is contained with paraffin and/or silicon oxide. Hydrogen fluoride, hydrochloric acid and nitric acid mixed liquid in the shielding layer are removed. The film is contained with silicon nitride, silicon oxide and aluminum oxide.    USE - Double-side P-type crystalline silicon solar battery manufacturing method.    ADVANTAGE - The method enables realizing disposable diffusion on the silicon solar cell and increasing a PN junction area of the solar cell, so that power generating efficiency of the solar cell is improved.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a double-side p-type crystalline silicon solar battery.
NOVELTY - The method involves printing shielding layer crystal silicon on the back surface. The boron diffusion process is performed by removing shielding layer and boron silicon glass layer. The double side anti-reflecting film (1) is formed by performing screen printing and sintering process. The shielding layer is removed with hydro fluoride, hydrogen chloride and nitric acid. The anti reflecting film is selected from the group consisting of silicon nitride, silicon oxide and aluminum oxide.    USE - N-type double-side solar cell manufacturing method.    ADVANTAGE - The PN junction area of the solar cell can be improved, so the output efficiency of the solar cell can be improved effectively.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the double-side solar cell manufacturing process.    Anti-reflecting film (1)    Positive electrode (2)    Front emitter layer (3)    Substrate (4)    Back electrode (6)
NOVELTY - Preparation of porous pyramid antireflective structure involves cleaning single crystal silicon substrate, carrying out etching process (a) to form face pyramid structure on the surface, immersing crystal silicon substrate in acid solution, carrying out etching process (b) to form mono-crystalline silicon substrate, preparing nano-structure, carrying out etching process (c) to form porous pyramid structure, carrying out alkali etching, and controlling the porous size of the pyramid structure to 0.8-2 microns.    USE - Preparation of porous pyramid antireflective structure used for preparing heterojunction with intrinsic thin-layer solar cell (claimed).    ADVANTAGE - The solar cell formed using the porous pyramid antireflective structure has improved short circuit current density, passivation effect of the substrate, open circuit voltage and conversion efficiency.
NOVELTY - A carbon-supported platinum-cobalt alloy catalyst is prepared by transforming graphite into graphite oxide using Hummers method, sonicating with ethylene glycol in ice bath to obtain graphene oxide-ethylene glycol suspension, pretreating with activated carbon XC-72, reacting with nitric acid and hydrogen peroxide to obtain reduced graphene oxide-carbon XC-72 carrier, sonicating, adding chloroplatinic acid and cobalt acetate solution, stirring, adding sodium hydroxide to adjust pH, heating in microwave reactor, cooling to room temperature, washing, filtering, grinding, and calcining.    USE - Preparation of carbon-supported platinum-cobalt alloy catalyst for fuel cell (claimed).    ADVANTAGE - The carbon-supported platinum-cobalt alloy catalyst is durable, and has good conductivity, large surface area and excellent catalytic activity.    DETAILED DESCRIPTION - A carbon-supported platinum-cobalt alloy catalyst (Pt-Co/C) is prepared by transforming graphite into graphite oxide using Hummers method in which 20-50 mg graphite powder is mixed with 50-100 ml ethylene glycol and 10-30 ml isopropanol, sonicating in ice bath for 15-30 minutes to obtain graphene oxide-ethylene glycol suspension, pretreating with 5-30 mg activated carbon XC-72, reacting with nitric acid and hydrogen peroxide (H2O2) to obtain reduced graphene oxide-carbon XC-72 carrier, performing magnetic stirring for 20-60 minutes, sonicating in ice bath for 10-20 minutes, adding 1.7-3.4 ml 0.0386 M chloroplatinic acid (H2PtCl6) and 1.33-2.66 ml cobalt acetate Co(CH3COO)2 solution, performing magnetic stirring for 30-60 minutes, adding 0.2 M sodium hydroxide (NaOH) to adjust pH to 8-11, stirring for 10-20 minutes, heating in microwave reactor for 1-2 minutes, preferably 0.5-2 minutes, cooling to room temperature for 0.5-2 minutes, washing with acetone and ethanol, filtering to remove suspended particles, grinding, and calcining.
NOVELTY - Manufacture of nano-structured copper-indium-gallium selenide (CIGS) absorber film involves depositing a film (a) including indium gallium selenide compound (230) on a substrate, then depositing a film (b) including copper-selenium compound, then heating the substrate and, then reactively depositing a film (c) including indium gallium selenide compound (240) to convert films into CIGS absorber film, and forming nano-morphological asymmetries in CIGS absorber film.    USE - Manufacture of copper-indium-gallium selenide absorber film for material for apparatus e.g. solar cell module (all claimed).    ADVANTAGE - The method efficiently provides copper-indium-gallium selenide absorber film having high optical absorption coefficient and light-trapping efficiency.    DETAILED DESCRIPTION - Manufacture of nano-structured copper-indium-gallium selenide (CIGS) absorber film involves depositing a film (a) including indium gallium selenide compound (230) on a substrate, then depositing a film (b) including copper-selenium compound, then heating the substrate and films to convert copper-selenium compound (CuSe) to copper-selenium compound (Cu2-xSe, where x is 0.2 to less than 1), then reactively depositing a film (c) including indium gallium selenide compound (240) to convert films into CIGS absorber film, and forming nano-morphological asymmetries in CIGS absorber film. The surface portion of the CIGS absorber film has a distribution of grain sizes with gaps between most of their surface area characterized by reentrant angles which effectively trap light. INDEPENDENT CLAIMS are included for the following:    (1) material; and    (2) apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view explaining the manufacture of copper-indium-gallium selenide absorber film.    Molybdenum layer (210)    Soda lime glass (220)    Indium-gallium selenide compound layer (230)    Copper-selenide compound layer (240)    Copper selenide material (250)
NOVELTY - The solar cell (1) has base (2), emitter (3) and passivation layers (4,5). The passivation layers are made of hydrogenated aluminum nitride. The hydrogenated siticiumnitrid is provided with a silicon oxide layer or a silicon nitride oxide layer. The vapor deposition nitrogen (N2), hydrogen (H2), ammonia (NH3) and trimethylaluminum (TMA) are inserted in atomic and/or molecular form.    USE - Solar cell for converting light into electrical power.    ADVANTAGE - The electrical efficiency of the solar cell can be improved effectively. Also the cost for manufacturing the solar cell can be reduced. The solar cell can be manufactured with less effort. The passivation effect of the solar cell can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view for the solar cell.    Solar cell (1)    Base (2)    Emitter (3)    Passivation layers (4,5)    Metallization lattice (7)
NOVELTY - A glass substrate contains 45-70 %mass silicon oxide, 10-20 %mass aluminum oxide, 0-0.5 %mass boron oxide, 0-6 %mass magnesium oxide, 0-4 %mass calcium oxide, 9.5-20 %mass strontium oxide, 0-5 %mass barium oxide, 0-8 %mass zirconium oxide, 3-10 %mass sodium oxide and 2-9.5 %mass potassium oxide.    USE - Glass substrate for copper-indium-gallium-selenium type solar cell (claimed).    ADVANTAGE - The glass substrate has high glass transition temperature and favorable moldability and thermal expansion coefficient, and provides solar cell having excellent power generation efficiency.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for copper-indium-gallium-selenium type solar cell (1).    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of solar cell.    Solar cell (1)    Glass substrate (5)    Buffer layer (11)    Transparent conductive film (13)    Cover glass (19)
NOVELTY - A glass sheet fluororesin laminated component has a 10-500 microns thick glass sheet and a fluororesin coat layer.    USE - Glass sheet fluororesin laminated component is used for guard plate, photoelectric conversion element e.g. solar cell and light-emitting diode, and semiconductor device (all claimed).    ADVANTAGE - The glass sheet fluororesin laminated component has excellent gas-barrier properties, flexibility, durability, and superb evenness.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of glass sheet fluororesin laminated component. The fluororesin coat layer is obtained by coating solution of fluororesin on surface of a glass sheet having thickness of 10-500 microns, removing solvent and hardening.
NOVELTY - The crystalline silicon solar cell wafer (100) has a crystalline silicon substrate (10) having a first surface, a second surface, and a side surface (15). An insulating layer (12) is formed merely on the side surface of the crystalline silicon substrate. The insulating layer covers merely on entire the side surface of the crystalline silicon substrate, and is in directly contact with the crystalline silicon substrate. The crystalline silicon substrate is a single crystalline silicon substrate, or a poly-crystalline silicon substrate.    USE - Crystalline silicon solar cell wafer.    ADVANTAGE - The throughput is increased, the manufacturing cost is reduced, and the pollutants are reduced since the edge isolation cutting process can be omitted during fabrication of the solar cell. The power generation area of the solar cell is increased since the edge region of the substrate is not removed. The solar cell exhibits better yield since the substrate can be prevented from being damaged due to the edge isolation cutting process. The solar cell has better operational safety since the current leakage between the first electrode and the second electrode at the edge region of the substrate is prevented.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a crystalline silicon solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the crystalline silicon solar cell wafer.    Crystalline silicon substrate (10)    Insulating layer (12)    Side surface (15)    Crystalline silicon solar cell wafer (100)
NOVELTY - A polypropylene film has haze of 6% or less, and thermal contraction rate of 15% or less at 150 degrees C. When thermomechanical analysis of polypropylene film is performed at a temperature increase rate of 5 degrees C/minute and load of 0.5 kg/mm2, the thermal elongation (E in %) in machine direction (MD) at 120-150 degrees C satisfies specified relation.    USE - Polypropylene film. Uses include but are not limited to packaging foodstuffs, electrical insulation component, surface protection film, base film of transparent conductive film, insulation film, capacitor, motor, back sheet of solar cell, and barrier film of inorganic oxide.    ADVANTAGE - The polypropylene film has excellent heat resistance, and dimensional stability. The mis-positioning and deformation during printing is suppressed. The polypropylene film has excellent physical properties even if it is exposed to environment at 150 degrees C or more. The efficiency of printing process is improved efficiently.    DETAILED DESCRIPTION - A polypropylene film has haze of 6% or less, and thermal contraction rate of 15% or less at 150 degrees C. When thermomechanical analysis of polypropylene film is performed at a temperature increase rate of 5 degrees C/minute and load of 0.5 kg/mm2, the thermal elongation (E in %) in machine direction (MD) at 120-150 degrees C satisfies the relation: log(E) less than or equal to 0.0275T-2.4839, where T is temperature (in degrees C).
NOVELTY - A polypropylene film has a haze of 6% or less, a heat shrinkage rate of 15% or less at 150 degrees C, a crystallinity, obtained from the endothermic peak area at a melting endothermic peak measured at a rate of temperature rise of 20 degrees C/minute using a differential scanning calorimeter, of 55% or more, a crystallinity, obtained from the endothermic peak area at 150 degrees C or more, of 48% or more, and a melting peak temperature at the melting endothermic peak of 168 degrees C or more.    USE - Polypropylene film is used as e.g. packaging film. Can also be used as base film of transparent conductive films e.g. insulation films of capacitors and motors, back sheets of solar cells, and barrier film of inorganic oxide e.g. indium-tin oxide.    ADVANTAGE - The polypropylene film is a highly-rigid oriented polypropylene film having excellent mechanical characteristics e.g. dimensional stability and high-temperature heat resistance. Deformation by shrinkage during heat-sealing, and mispositioning and deformation during printing are suppressed. Printing efficiency is improved, and usage of coating agent and lamination adhesive agent is facilitated. The physical properties of the film are maintained even when exposed to an environment of 150 degrees C or more. The film is thin, lightweight and economical.
NOVELTY - A sputtering target has sintered compact having component comprising 2-30 atomic% gallium, 15-45 atomic% indium and 0.05-15 atomic% sodium, and remainder of copper and unavoidable impurity. The sintered compact has sodium compound phase in which sodium is present in the form of sodium compound containing compound chosen from sodium fluoride, sodium sulfide and sodium selenide. The average particle diameter of sodium compound phase is 10 mu m or less.    USE - Sputtering target is used for copper-indium-gallium selenide thin-film solar cell.    ADVANTAGE - The sputtering target has suppressed moisture absorption discoloration and abnormal discharge at the time of sputtering, and high strength and damage-proof property. The copper-indium-gallium selenide thin-film solar cell is obtained with high mass productivity and generating efficiency using sputtering.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of sputtering target.
NOVELTY - Silicon is produced by reacting chlorosilane compound and hydrogen, and exhaust gas discharged during silicon deposition is contacted with activated carbon. Hydrogen in post-conversion-reaction gas obtained in the conversion reaction is separated, and the separated hydrogen is supplied to the silicon deposition process. The post-conversion-reaction gas is contacted with adsorbent containing Lewis acidic compound before separation process. Hydrogen in the separation process is contacted with adsorbent containing Lewis acid compound, to obtain polycrystalline silicon.    USE - Manufacture of polycrystalline silicon used as raw material for manufacturing semiconductor, wafer and solar cell for generating photovoltaic power.    ADVANTAGE - The phosphorus impurity derived from activated carbon catalyst in circulating gas is removed easily and effectively. The content of phosphorus atom is reduced.    DETAILED DESCRIPTION - Silicon is produced by reacting chlorosilane compound and hydrogen, and the exhaust gas discharged during silicon deposition is contacted with activated carbon and hydrogen chloride in the exhaust gas is removed. Hydrogen in a post-conversion-reaction gas obtained in the conversion reaction process is separated, and the separated hydrogen is supplied to the silicon deposition process. The post-conversion-reaction gas obtained in the conversion reaction process is contacted with an adsorbent containing Lewis acidic compound before separation process. The hydrogen obtained in the separation process is contacted with adsorbent containing Lewis acid compound before supplied to the silicon deposition process, to obtain polycrystalline silicon.
NOVELTY - The structure has second semiconductor layer that comprises dopant profile with graded concentration such that first portion of second semiconductor layer, distal from first semiconductor layer, is degenerately doped for forming first tunnel junction layer of a tunnel junction. The second portion of second semiconductor layer, proximal to first semiconductor layer, is doped for forming emitter layer of first photovoltaic homo-junction. The third semiconductor layer is degenerately doped for forming second tunnel junction layer of tunnel junction.    USE - Photovoltaic semiconductor structure of tandem solar cell device or photovoltaic device (all claimed).    ADVANTAGE - The third semiconductor layer is degenerately doped for forming second tunnel junction layer of tunnel junction so that the photovoltaic semiconductor structure can be formed easily.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming photovoltaic semiconductor structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the performance of tunnel junction structures integrated with base photovoltaic cell.    Upper grid contact (500)    Upper tunnel junction layer (505)    Composite lower tunnel junction and emitter layer (510)    Absorber layer (520)    Back surface field layer (525)
NOVELTY - Acid-treatment of silicon-containing substrate involves contacting silicon substrate with acidic solution containing 28-50 wt.% nitric acid, 5-30 wt.% hexafluorosilicic acid, 1-10 wt.% hydrofluoric acid and 20-60 wt.% water in a process vessel, treating and removing the substrate from the process vessel.    USE - Acid-treatment of silicon-containing substrate used for silicon solar cell.    ADVANTAGE - The method efficiently and economically provides surface-processed silicon-containing substrate.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) processed silicon-containing substrate; and    (2) usage method of acidic solution in treatment of silicon-containing substrate.
NOVELTY - The device has a p-doped silicon substrate (10) formed at a surface, and an aluminum oxide passivation layer arranged on a p-doped section of the substrate. The layer comprises a beryllium, gallium or iron ion layer that is applied directly on a surface of the substrate. A nitride layer i.e. silicon nitride layer, is formed as a covering layer on a beryllium, gallium or iron oxide layer (21) or beryllium, gallium or iron-doped oxide layer. A thin silicon dioxide layer is formed between the substrate and a beryllium, gallium or iron-doped nitride layer.    USE - Semiconductor device i.e. thin layer-solar cell e.g. mono or polycrystalline silicon-based solar cell, for generating current from solar energy.    ADVANTAGE - The aluminum oxide passivation layer is arranged on the p-doped section of the substrate, and comprises the beryllium, gallium or iron ion layer that is applied directly on the surface of the substrate, thus increasing efficiency of the semiconductor device, and reducing manufacturing cost of the semiconductor device.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device of a solar cell.    P-doped silicon substrate (10)    Beryllium gallium or iron oxide layer (21)
NOVELTY - The solar cell (100) has a silicon substrate (102) that is provided with a negative basic doping. A dielectric layer (116) is provided on back side of the silicon substrate. The dielectric layer is provided with an electrical layer (120) made of solid aluminum. The dielectric layer is provided with openings (122) through which the electrical layer is contacted with the backside of the silicon substrate. A p-doped back-side selective emitter (124) is provided at the pads (126) of silicon substrate.    USE - Solar cell such as passivated emitter, rear locally-diffused (PERL) solar cell and passivated emitter and rear contact (PERC) solar cell for solar panel.    ADVANTAGE - The solar cell of n-type or p-type doped silicon can be mounted flexibly. The potential and efficiency of the solar cell can be improved. The solar cell can be manufactured easily at low cost. The photovoltaic effect of the solar cell can be improved. The crystal quality and homogeneity of the silicon substrate can be improved. The cleaning of wafer can be carried out efficiently.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the solar cell.    Solar cell (100)    Silicon substrate (102)    Dielectric layer (116)    Electrical layer (120)    Openings (122)    P-doped back-side selective emitter (124)    Pads (126)
NOVELTY - A texture-forming composition comprises water, a base, and a phosphonic acid anion (I).    USE - Composition is used for texture formation of uneven structure in silicon surface used in manufacture of silicon substrate having uneven structure on surface (claimed) for photoelectric conversion elements e.g. solar cells.    ADVANTAGE - The composition enables manufacture of silicon substrate with reduced nonuniformity and light reflectivity, and excellent reproducibility, without requiring stringent management of liquid composition. The preparation kit can be prepared easily with uniform high concentration. Transport cost is reduced.    DETAILED DESCRIPTION - A texture-forming composition comprises water, a base, and a phosphonic acid anion of formula (I).    R=5-25C organic group.    INDEPENDENT CLAIMS are included for the following:    (1) manufacture of silicon substrate having uneven structure on surface, which involves contacting the surface of a silicon substrate with the texture-forming composition; and    (2) composition-preparation kit comprising solution (I) containing water and a base, and solution (II) containing phosphonic acid anion.
NOVELTY - Method for forming quantum antidots in gallium-arsenide/germanium semiconductor involves depositing carbon on surface of germanium substrate, diffusing carbon and germanium on surface of germanium substrate, and nucleating epitaxy gallium-arsenide film on surface of substrate.    USE - Method for forming quantum antidots used for high-contrast grating mirror, buried high-reflectivity layer and high-diffraction layer of light-emitting device, high-diffraction layer of multiple-junction solar cell, high-resistivity electrical isolation layer and photonic nano-device (all claimed) e.g. quantum dot laser, quantum dot semiconductor optical amplifier and quantum dot photodetector.    ADVANTAGE - The quantum antidot structure is manufactured efficiently and economically with high resistivity and reduced parasitic leakage in semiconductor device.
NOVELTY - A polyarylate resin comprises a bisphenol residue (I), and an aromatic dicarboxylic acid residue (II).    USE - Polyarylate resin is used in resin solution for forming film (all claimed) used for electronic device, molding component for liquid crystal display, solar cell and lighting fixture in portable terminal, diaphragm of substrate film, coating material, disk for information recording, protective film, transparent conductive film, optical lens, binder for electrophotographic photoreceptor, and audio equipment. Uses include but are not limited to substrate film of flexible display, laminated film, motor, water-repellent coating agent, and mold release-property coating agent.    ADVANTAGE - The polyarylate resin has excellent light transmittance in short wavelength region, heat resistance, flame retardance, flexibility, fluidity, coating workability, water-repellent property, antifouling property, surface slipperiness, mold release property and hydrolysis resistance, and reduced yellowing property. The resin solution containing the polyarylate resin has reduced inherent viscosity.    DETAILED DESCRIPTION - A polyarylate resin comprises a bisphenol residue of formula (I), and an aromatic dicarboxylic acid residue of formula (II).    R1-R4=1-6C hydrocarbyl, halo alkyl or halo;    p,q,r,s=0-4;and    X=divalent radical containing fluoro.    INDEPENDENT CLAIMS are included for the following:    (1) resin solution, which is obtained by dissolving polyarylate resin in an organic solvent; and    (2) film, which has polyarylate resin formed into a film.
NOVELTY - The solar cell has an active region (104) which is a multilayer structure comprised of crystalline semiconductors e.g. silicon, gallium arsenide, elemental/compound semiconductors, III-V and II-VI semiconductors. The active region is comprised of opposing upper and lower surface zones (116,118) that are both nano-structured. The active region is arranged on a substrate (102) such that nano-voids (114) are formed between the active region and the substrate. The multilayer structure is comprised of a p-doped layer and an n-doped layer, and provides electrical power when illuminated.    USE - Ultra thin film nanostructured solar cell such as single-junction solar cell, multi-junction solar cell, silicon solar cell, elemental semiconductor solar cell and compound semiconductor solar cell.    ADVANTAGE - The cost of the solar cell can be significantly reduced without compromising efficiency by reducing the total amount of semiconductor material required for an efficient solar cell. The solar cell can be fabricated at a large scale, and hence the cost of the solar cell can be further reduced.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of fabricating a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of the solar cell.    Substrate (102)    Active region (104)    Nano-void (114)    Upper surface zone (116)    Lower surface zone (118)
NOVELTY - Substituted benzo(lmn)(3,8)phenanthroline-1,3,6,8-tetraone compounds (I) are new.    USE - (I) are useful in an electronic device, negative-channel transistor (all claimed), organic LEDs, solar cells, sensors or FET elements.    ADVANTAGE - (I): exhibit improved melting points, crystallinity and thermal and oxidative stability, and good solubility in common organic solvents; act as good electron transport materials; and provide the organic films exhibiting improved mechanical strength, toughness and/or durability without forming cracks in the films.    DETAILED DESCRIPTION - Substituted benzo(lmn)(3,8)phenanthroline-1,3,6,8-tetraone compounds (I) of formulae (IIa) and (IIb) are new.    X1 = O, S, Se, Te or NR;    Y1 = N;    R = H, alkyl, heteroalkyl, aryl or heteroaryl;    R1, R2 = alkyl, heteroalkyl, aryl or heteroaryl (all optionally substituted); and    R3, R4 = R1, H or halo.    INDEPENDENT CLAIMS are also included for:    (1) making (I); and    (2) a negative-channel transistor comprising a layer that comprises at least one (I), where the layer is obtained by solution processing and annealing a composition comprising at least one solvent and (I).
NOVELTY - A solar battery surface processing method involves mixing an aqueous solution of 3-7 mass% hydrogen chloride and 1-2 mass% hydrogen fluoride, cleaning solar battery surface using obtained solution, washing and etching solar battery surface using mixed solution of an aqueous solution of 20-50 mass% nitric acid and 0.5-5 mass% hydrogen fluoride, etching resultant product using a mixed solution of 60-80 mass% sulfuric acid and 5-12 mass% hydrogen peroxide, oxidizing resultant product to form an oxide layer.    USE - Method for processing solar battery surface i.e. amorphous silicon/crystal silicon heterojunction solar energy battery.    ADVANTAGE - The method enables processing solar battery surface with high efficiency.
NOVELTY - A resin composition comprises mixture containing fully aromatic polyamide and multifunctional compound having more than trivalence, or fully aromatic polyamide containing structural units (I), (II), (III) and (IV), and multifunctional compound modified aromatic polyamide derived from multifunctional compound having more than trivalence. The molar fraction of the structural units (I), (II), (III) and (IV) are l, m, n, and o, respectively.    USE - Resin composition is used for formation of film (claimed). Uses include but are not limited to optical filter, lens, microlens array, anti-reflective film, and substrate for display materials and solar cell.    ADVANTAGE - The resin composition has excellent chemical resistance with respect to acetone, and provides the film with high light transmittance and reduced thermal expansion coefficient.    DETAILED DESCRIPTION - A resin composition comprises mixture containing fully aromatic polyamide and multifunctional compound having more than trivalence, or fully aromatic polyamide containing structural units of formula (I), (II), (III) and (IV), and multifunctional compound modified aromatic polyamide derived from multifunctional compound having more than trivalence. The molar fraction of the structural units (I), (II), (III) and (IV) are l, m, n, and o, respectively.    l=25-50;    l+m=50;    n=20-50;    l+m+n+o=95-100;    R1,R2=trifluoromethyl, fluoro, methoxy, methyl, nitro, cyano, or bromo;    R3,R4=arbitrary group;    q=1-3;    R5,R6=arbitrary group;    r=1-4;    R7=group containing silicon, phosphorus, sulfur, aryl, or ether bond;and    R8=aryl.    An INDEPENDENT CLAIM is included for film, which contains the resin composition.
NOVELTY - System comprises fluorometer, laser dye, solid host and solvent.    USE - The system is useful: for investigating the effect of solid matrix on rhodamine dye (claimed); and in applications including tunable laser medium, pH indicator, sensors, non linear optical material, and sensitization of solar cells.    ADVANTAGE - The system utilizes fluorescent dyes which has greater sensitivity of fluorescence towards instrumental detection.
NOVELTY - Preparation of strontium bismuth based magnetic photocatalyst involves mixing bismuth nitrate as raw material and nitric acid as solvent, placing in reaction vessel, mechanically stirring to obtain transparent homogeneous solution, preparing strontium ferrite suspension by mixing strontium ferrite as raw material and sodium dodecylbenzenesulfonate as dispersant, placing sodium dodecylbenzenesulfonate, bismuth nitrate and strontium ferrite in reaction vessel, stirring, adding sodium hydroxide to adjust pH value, filtering, drying, placing in muffle furnace, calcining and cooling.    USE - Method for preparing strontium bismuth based magnetic photocatalyst (claimed) used for degradation of organic pollutants, photocatalytic decomposition of water into hydrogen and solar cells.    ADVANTAGE - The catalyst is environment-friendly and has good magnetic performance and strong anti-demagnetization capability. The method is safe, short and simple.    DETAILED DESCRIPTION - Preparation of strontium bismuth based magnetic photocatalyst comprises mixing bismuth nitrate as raw material and nitric acid as solvent at ratio of 1:4-6 to form homogeneous solution with concentration of 3-5 mol/volume, placing in reaction vessel, mechanically stirring to obtain transparent homogeneous solution, preparing strontium ferrite suspension by mixing strontium ferrite as raw material and sodium dodecylbenzenesulfonate as dispersant, placing sodium dodecylbenzenesulfonate, bismuth nitrate and strontium ferrite in reaction vessel, stirring for 10-20 minutes, adding 3-5 mol/L sodium hydroxide to adjust pH value of mixed solution to 11-13, filtering, collecting filtrate and filter residue, drying filter residue at 55-65 degrees C, placing in muffle furnace, calcining at 500-600 degrees C for 3-5 hours and cooling. Mass ratio of sodium dodecylbenzenesulfonate, bismuth nitrate and strontium ferrite is 1:20:4-6.
NOVELTY - A co-doped oxide-containing ceramic material with apatite toughened structure is new.    USE - Co-doped oxide-containing ceramic material with apatite toughened structure used for solid oxide fuel cell, oxygen sensor and oxygen permeable membrane.    ADVANTAGE - The material has stable and compact structure, and excellent ion-conducting property and sintering performance.    DETAILED DESCRIPTION - A co-doped oxide-containing ceramic material with apatite toughened structure of formula M10-xAxX6yB'yO27-(x+y)/2 is new.    M=La, Pr, Nd, Sm, Gd, Ce, Tb, Er, Yb or Dy;    X=Si, Ge or P;    A=Mg, Ca, Sr, Ba, Co, Ni, Cu, Mn or Bi; and    B'=B, Al, Ga, Zn, Mg, Ti, Ge, Fe, Co, N1, Cu or Mn.    An INDEPENDENT CLAIM is included for preparation of co-doped oxide-containing ceramic material with apatite toughened structure.
NOVELTY - This utility model relates to solar energy capable of realizing waste heat by using one's gallium arsenide secondary generating device. Comprising a fixed bracket following seat is set on the fixing bracket and upper end of the sunlight tracking's, one fixing bracket is provided with a step surface reflective condenser and gallium arsenide solar battery power generation unit further comprises a semiconductor temperature difference battery level generating unit. This utility model claims one kind of energy-saving, simple structure, simple processing, low cost, wide gallium arsenide solar secondary generating device.
NOVELTY - The component has a photovoltaic battery assembly connected a heat-conducting contact and a light collecting system. A tubular tracking photovoltaic concentrator component unit is provided with a sealed glass tube housing. The photovoltaic battery assembly is formed with a light receiving surface for realizing sunshine tracking implementation. The photovoltaic battery assembly is provided with a high-efficient concentrator. A photovoltaic cell is formed as a single crystal silicon cell, a polycrystalline silicon cell, a cadmium telluride cell or CIGS thin film solar cell.    USE - Tubular tracking photovoltaic concentrator component.    ADVANTAGE - The component is inexpensive, and has better sealing performance, better weather resistance effect, high mechanical strength, self-supporting force and prolonged service life.    DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a tubular tracking photovoltaic concentrator component.
NOVELTY - The method involves fixing a substrate into a diffusion furnace. The diffusion furnace is filled with first selenide gas. Multi-step heating operation is performed, while raising temperature to first predetermined temperature at first predetermined time. The first selenide gas is extracted. Second selenide gas is filled in the diffusion furnace. The diffusion furnace is heated at second predetermined temperature in second predetermined time. The temperature is reduced. The second selenide gas is extracted from the diffusion furnace to perform cooling process.    USE - CIGS thin film solar cell manufacturing method.    ADVANTAGE - The method enables reducing absorption layer film peeling and molybdenum sulfide layer thickness.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a CIGS thin film solar cell manufacturing device.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph representation results of a CIGS thin film solar cell manufacturing method. '(Drawing includes non-English language text)'
NOVELTY - The method involves performing plasma-enhanced chemical vapor deposition operation to form a silicon nitride passivation film. A surface of the silicon nitride passivation film is formed with a silicon base material layer. Nitrogen is filled in a chamber. Pressure of the nitrogen is greater than pressure of the chamber. The nitrogen is heated for about 5 to 10 minutes at temperature of about 460 degrees centigrade to 480 degrees centigrade. Radio frequency power of the silicon nitride passivation film is about 5 to 6.5 KW. Reaction environment pressure of the nitrogen is about 10000mTorr.    USE - Method for manufacturing a silicon nitride passivation film of a solar cell.    ADVANTAGE - The method enables reducing passivation difficulties of the silicon nitride passivation film in nitrogen atmosphere for performing silicon nitride passivation film heating process so as to improve hydrogen atoms silicon nitride passivation film passivation effect. The method enables improving substrate photon-generated carrier composite efficiency and photoelectric conversion efficiency of a solar cell. The method enables avoiding the need to utilize additional devices so as to reduce manufacturing cost, thus improving production efficiency of a solar cell product.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a solar cell manufacturing method.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a silicon nitride passivation film.
NOVELTY - The substrate has a main surface and an end surface. The level difference (Rk) of a core unit of the end surface is set to 1.20 micrometers or less under conditions of the cutoff value of 0.8 mm, when the end surface is etched by 0.5 micrometer or less of etching amount. The arithmetic-mean inclination of the end surface becomes 0.13 or less under conditions of the cutoff value of 0.025 mm, when the end surface is etched by 0.5 micrometer or less of etching amount. The level difference of the core unit is 1.00 micrometers or less under conditions of cutoff value of 0.8 mm.    USE - Glass substrate for FPD of image display apparatus such as LCD, plasma display (PDP), organic electroluminescent display (OLED), field emission display (FED), touchscreen and solar cell.    ADVANTAGE - The level difference of the core unit of end surface is set to specific value, when end surface is etched by specific etching amount. Hence the dust generation can be suppressed after the completion of the etching process.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of the glass substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical diagram demonstrating the smoothing roughness curve and load curve.    Smoothing roughness curve (10)    Load curve (11)    Equivalent straight line (12)
NOVELTY - The method involves making an electrically conductive composition by which electro-conductive filler is blended with a thermoplastic resin into an intermediate layer (11). A multilayer film (1) which makes a composition for peeling which has the thermoplastic resin different from the thermoplastic resin as a main component both outer layers (12) is formed into a film by a co-extrusion method. The thickness of the multilayer film is set to be 120 micrometers or more in a method to manufacture an electro-conductive film (f) which peels both the outer layers.    USE - Method for manufacturing electro-conductive film used for battery such as lithium ion battery and fuel cell.    ADVANTAGE - The potential of the electro-conductive can be drawn fully. Favorable electro-conductivity of the film can be attained.    DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view illustrating the manufacturing method of electro-conductive film.    Multilayer film (1)    Chilled roll (3)    Intermediate layer (11)    Outer layer (12)    Electro-conductive film (f)
NOVELTY - A positive electrode active material comprises core portion (17) which consists of lithium transition metal oxide, and coated portion (18) coated on at least one portion of surface of the core portion. The coated portion contains layer-structure silicate as main component. Phosphoric acid crosslinking of the lithium transition metal oxide of core portion and phyllosilicate (19) of the coated portion is carried out.    USE - Positive electrode active material is used for manufacturing non aqueous-electrolyte secondary battery e.g. lithium ion secondary battery used as power supply of vehicle (all claimed). Uses include but are not limited to hybrid vehicle, plug-in hybrid motor vehicle, electric vehicle, fuel cell electric vehicle, electric wheelchair, electric-power-assisted bicycle, personal computer and portable terminal.    ADVANTAGE - The non-aqueous-electrolyte secondary battery has excellent durability.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of positive electrode active material;    (2) non-aqueous-electrolyte secondary battery;    (3) manufacture of non aqueous-electrolyte secondary battery; and    (4) vehicle.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the Positive electrode active material.    Core portion (17)    Coated portion (18)    Phyllosilicate (19)
NOVELTY - The system (200) has a fuel cell apparatus (150) generating electric power using fuel, and a control apparatus e.g. cluster/community energy management system (CEMS), communicating with the fuel cell apparatus. The control apparatus receives a message that shows classification of the fuel cell apparatus. The control apparatus receives the message that shows presence or absence of a function and transmits the message that shows the classification of the fuel cell apparatus prior to reception of the message showing the classification of the fuel cell apparatus.    USE - Energy management system (EMS) for managing distributed power supply of household appliances. Uses include but are not limited to an air conditioner, an illuminating device, a solar cell, and a storage battery i.e. secondary battery.    ADVANTAGE - The control apparatus receives the message that shows classification of the fuel cell apparatus, so that the household appliances can be appropriately controlled.    DETAILED DESCRIPTION - The fuel cell apparatus contains a solid oxide fuel cell (SOFC), a polymer electrolyte fuel cell (PEFC), a phosphoric acid fuel cell (PAFC), a molten carbonate fuel cell (MCFC) and a gas engine type electric power generating apparatus. The control apparatus is home energy management system (HEMS), store energy management system (SEMS), building energy management system (BEMS), and factory energy management system (FEMS). An INDEPENDENT CLAIM is also included for a management method.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic block diagram of an EMS.'(Drawing includes non-English language text)'    Load (120)    Storage battery unit (140)    Fuel cell apparatus (150)    EMS (200)    User terminals (300, 310, 320)
NOVELTY - The method involves preparing a wound electrode portion (20) in which an uncoated portion (33) where positive electrode active material layers (32,34) are not formed is laminated. Secondary battery is structured by accommodating the wound electrode portion and a non-aqueous electrolyte in a battery case. The secondary battery is subjected to an aging treatment in which the secondary battery is retained within a temperature range that is equal to or higher than 60 degrees C.    USE - Method for manufacturing non-aqueous electrolyte secondary battery (claimed) such as lithium secondary battery used as driving power supply for vehicle such as motor vehicle, electric vehicle, hybrid vehicle and fuel cell powered vehicle. Can also be used in nickel hydride battery.    ADVANTAGE - The method can perform the high-temperature aging treatment even if encapsulation with dry air by the atmosphere or ambient air is adopted. The manufacturing cost of the secondary battery is reduced by reducing the aging treatment time.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a non-aqueous electrolyte secondary battery.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the non-aqueous electrolyte secondary battery.    Wound electrode portion (20)    Positive electrode active material layers (32,34)    Uncoated portion (33)    Negative electrode current collector terminal plate (62)    Separator (70)
NOVELTY - A barrier film (10) comprises a substrate (12), a base polymer layer (14), an oxide layer (16), an adhesion-modifying layer (18) and a top coat polymer layer (20), in order.    USE - Barrier film is used as flexible replacements for glass encapsulating materials in display, lighting, solar, photovoltaic and electronic devices, e.g. copper indium gallium (di)selenide (CIGS) solar cell, organic light emitting display (OLED), electrochromic display, electrophoretic display, liquid crystal display (LCD) and electroluminescent solid state lighting device.    ADVANTAGE - The barrier film has excellent weatherability and resistance to inter-layer delamination. The addition of adhesion-modifying layer greatly improves the peel strength adhesion especially after exposure to high heat and humidity conditions, removes the need for a tie layer, simplifies the coating process and barrier coating stack construction, and retains excellent barrier properties and optical transmission performance.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of barrier film.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the barrier film.    Barrier film (10)    Substrate (12)    Base polymer layer (14)    Oxide layer (16)    Adhesion-modifying layer (18)    Top coat polymer layer (20)    Inorganic layer (21)
NOVELTY - Cathode composite composition for a lithium (Li) ion battery, comprises lithium-based compounds; and at least one of LiMn1.5Ti0.5O4 and LiMn1.5Ni0.5O4.    USE - The composition is useful for Li-ion battery (claimed). The battery is useful in a variety of applications in which primary or secondary batteries are used, including fuel cells for automotive and transportation applications.    ADVANTAGE - The cathode composite composition provides batteries having increased material utilization, improved cathode cyclability, increased energy density and decreased irreversible capacity loss as compared to traditional Li-ion batteries.    DETAILED DESCRIPTION - Cathode composite composition for a lithium (Li) ion battery, comprises Li(M1-xLix)O2 or yLi2MnO3.(1-y)LiM2; and at least one of LiMn1.5Ti0.5O4 and LiMn1.5Ni0.5O4.    M=Ni, Co, or Mn;    x=greater than 0 but less than 0.5; and    y=greater than 0 but less than 1.    An INDEPENDENT CLAIM is included for a Li-ion electrochemical cell comprising a cathode, an anode, and a separator disposed between the cathode and the anode, where the cathode comprises a mixture of either Li(M1-xLix)O2 or yLi2MnO3.(1-y)LiM2, and LiMn1.5Ti0.5O4, the LiMn1.5Ti0.5O4 comprises a spinel structure.
NOVELTY - The method involves forming a first silicon nitride film on a semiconductor substrate (102) using a plasma flow from a first plasma chamber (111). A second silicon nitride film of a composition different from the first silicon nitride film is formed using the plasma flow from a second plasma chamber (112) into which ammonia gas and silane gas are introduced in flow ratio different from flow ratio of first plasma chamber. A flow controller (113) is provided to adjust the flow ratio of the ammonia gas and silane gas introduced into the two plasma chambers.    USE - Method for manufacturing solar cell (claimed).    ADVANTAGE - By adjusting the flow ratio of the ammonia gas and silane gas introduced into the two plasma chambers, the anti-reflective film can be formed with excellent in passivation effect. The silicon nitride film of the two layer structure can be formed stably. The productivity improvement of the solar cell can be ensured.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the remote plasma chemical vapor deposition apparatus. (Drawing includes non-English language text)    Remote plasma chemical vapor deposition apparatus (100)    Film-forming chamber (101)    Semiconductor substrate (102)    Plasma chambers (111,112)    Flow controller (113)
NOVELTY - An ink composition comprises a low-viscosity solvent and highly viscous alcohol, and is obtained by forming an ink from a solution obtained by mixing 100 pts. wt. poly(3,4-ethylenedioxythiophene) (11)/polystyrene sulfonate (12) aqueous solution, 300 pts. wt. or less mixed alcohol, and a silane coupling agent (13). The concentration of poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate aqueous solution is 1.3 wt.% to 3.5 wt.% or less.    USE - Ink composition is used for manufacturing transparent conductive film (all claimed). Uses include but are not limited to liquid crystal display, electroluminescent display, plasma display, electrochromic display, electronic paper, electromagnetic wave shield, solar cell and touch screen.    ADVANTAGE - The transparent conductive film formed using the ink composition has excellent electroconductivity and transmittance.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) manufacture of ink composition;    (2) transparent conductive film, which is formed using ink composition; and    (3) manufacture of transparent conductive film.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of ink composition.    Polyethylenedioxythiophene (11)    Polystyrene sulfonate (12)    Silane coupling agent (13)
NOVELTY - The shadow masks has a first mask that is used for depositing a back contact layer (120) on a substrate (110) and provided with vertical lines and first tabs that are joined to vertical lines on one side. A second mask is used for depositing copper indium gallium selenide absorption layer (130), buffer layer and conductive layer on back contact layer. A third mask is used for depositing metal gate lines, and provided with bus bar openings and sets of finger openings. Second parallel lines in first mask depend on length of cells, width of second parallel lines and length of substrate.    USE - Set of shadow masks used for fabrication of interconnected thin film solar cells such as copper indium gallium selenide cells, for concentrated photovoltaic system (all claimed).    ADVANTAGE - The subsequent high temperature annealing process which damage the solar cells, can be avoided. The grid thickness can be maintained, while the interference in shadow masks is suppressed. The cell isolation and interconnection steps can be integrated into the cells construction process, so that the labor cost and the material cost of fabrication can be reduced.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view illustrating the thin film solar cells during the fabrication process.
NOVELTY - Aqueous alkaline etchant solution (S1) for texturing surface of crystalline silicon substrate comprises 0.5-5 wt.% of alkaline component and 0.1-5 wt.% of nanoparticle slurry.    USE - For texturing surface of crystalline silicon substrate (claimed) useful in fabrication of crystalline silicon-based solar cells.    ADVANTAGE - The aqueous alkaline etchant solution provides improved textured crystalline silicon surface, with increased density of smaller-sized pyramids compared to KOH-only process. The improved morphology of textured surface that is achieved by utilizing aqueous alkaline etchant solution leads to decrease in measured reflectance and increased light absorption.
NOVELTY - The desulfurizer has a gas introduction pipe (3) which introduces desulphurization object gas in a container (2). The gas introduction pipe is provided with a header tubular-main portion (30) whose length is intersected with respect to the advancing direction of the desulphurization object gas in the desulfurizing agent filling area (S1), and is located in the desulfurizing agent filling area. The jet nozzle (32) for desulphurization object gas is provided in the longitudinal direction of the header tubular-main portion at intervals.    USE - Desulfurizer of fuel cell power generation system used for processing target fuel gas such as liquid petroleum gas used as hydrogen source of fuel cell.    ADVANTAGE - The inclinations with respect to desulfurizing agent is attained. The structure of the desulfurizer is simple, so that manufacturing cost of the desulfurizer can be reduced effectively.    DETAILED DESCRIPTION - The gas introduction pipe has a non-header tubular-main portion which is penetrated into the container and is extended in the advancing direction of the desulphurization object gas in the desulfurizing agent filling area. The header tubular-main portion is connected with the front-end portion of the non-header tubular-main portion. A cover closes end side opening of the container. The cover is provided with the outflow port and a hole different from the outflow port. The gas introduction pipe approaches into the inside from the exterior of the container through the hole of the cover. The jet nozzles of the advancing direction of the desulphurization object gas in the desulfurizing agent filling area are desulfurized so that desulphurization object gas is ejected in the opposite direction.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the desulfurizer.    Container (2)    Gas introduction pipe (3)    Header tubular-main portion (30)    Jet nozzle (32)    Desulfurizing agent filling area (S1)
NOVELTY - A fullerene derivative (I) is new.    USE - New fullerene derivative is used for organic semiconductor film for organic thin-film solar cell (all claimed) e.g. silicon-type solar cell.    ADVANTAGE - The organic thin-film solar cell formed using organic semiconductor film containing fullerene derivative has high photoelectric energy conversion efficiency.    DETAILED DESCRIPTION - A fullerene derivative of formula (I) is new.    R 1-R 9=H, or deuterium.    An INDEPENDENT CLAIM is included for manufacture of fullerene derivative.
NOVELTY - The method involves isolating portions other than the light-emitting device of the film-forming room interior. The organic material adhering to portions other than the light-emitting device of the film-forming room interior is washed by oxygen and the water content heated in the removed state. The organic materials isolated from portions other than device by the cleaning process in the state removed in oxygen or water content are collected. The collected organic material is returned and recycled to the light-emitting-device manufacturing process.    USE - Method for manufacturing light emitting device such as organic electroluminescent display or organic LED using organic material such as organic electronics material, organic-semiconductor material, organic solar cell material, organic electroluminescent material and pharmaceutical organic material.    ADVANTAGE - The utilization efficiency of the organic material can be improved. The organic material is recoverable and recyclable without degrading organic materials other than the organic material which is formed into the film on the substrate.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for light-emitting-device manufacturing apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the manufacturing apparatus of the light-emitting device.    Substrate (1)    Conveyance chamber (32)    Conveyance mechanism (33)    Pre-processing chamber (34)    Refinement chamber (40)
NOVELTY - A solar cell (10) has a n-type-semiconductor layer (3), an intermediate layer, and a p-type semiconductor layer (5) containing chalcogenide compound as a main component, where the main component of the intermediate layer is tin-zinc-sulfur type compound whose number of atoms with respect to the sum of total number of atoms of zinc and tin is 10-40%.    USE - Solar cell such as copper-indium selenide solar cell, copper-indium-gallium selenium solar cell and copper-indium-gallium-selenium sulfide solar cell.    ADVANTAGE - The solar cell has high durability and high photoelectric conversion efficiency, and does not use the compound containing an element with high toxicity.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a solar cell.    Transparent substrate (1)    Transparent electrode film (2)    N-type-semiconductor layer (3)    Short circuit prevention layer (4)    P-type-semiconductor layer (5)    Solar cell (10)
NOVELTY - A phosphor substrate (100) is equipped with transparent substrate (101), fluorescent substance layer (102) formed on one surface of the transparent substrate and wavelength selection film formed on the fluorescent substance layer. The fluorescent substance layer emits light by excitation of light, and contains fluorescent substance particles (103), and gap (104) maintained among the fluorescent substance particles.    USE - Phosphor substrate is used for solar cell module and light-emitting device for illuminating device, display apparatus (all claimed) for flat panel display and electronic device e.g. mobile telephone.    ADVANTAGE - The solar cell module obtained by the phosphor substrate has excellent photoelectric conversion efficiency. The illuminating device obtained by the phosphor substrate has excellent illumination intensity.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) light-emitting device; and    (2) solar cell module.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the phosphor substrate.    Phosphor substrate (100)    Transparent substrate (101)    Fluorescent substance layer (102)    Fluorescent substance particles (103)    Gap (104)
NOVELTY - Method of corroding substrate involves contacting substrate with process medium having pH value of more than 12 and viscosity of 1.5 mPa.second or more.    USE - Method of corroding substrate used in crystalline solar cell.    ADVANTAGE - The method efficiently and economically corrodes substrate surface.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) device for carrying out corroding substrate; and    (2) usage method of medium in smoothing of substrate surface.
NOVELTY - Thin-film Cu(In, Ga)Se2-based solar cells and the III-V laser diodes of GaN, InGaN, GaAs etc. for the light-emitting purpose all involve the Ga element. In this invention, a cost-effective and unique processing method has been developed for synthesizing the Ga-containing alloys, compounds, and Intermetallic compounds in the powder form. Due to its low melting temperature of 29 DEG C, Ga metal as an ingot can not be used for powder processing. Ga needs in the forms of chloride, sulfate, or metalorganic compounds for the chemical reactions. Ga needs to be dissolved in solvents in order for chemical synthesis. Ga compounds can be formed by casting to form ingots instead of powder. Ga needs in the forms of dangerous trimethyl gallium or trimethyl gallium in order to be used for metalorganic chemical vapor deposition of GaAs, GaN, AlGaInP thin films or powders. If the Ga-containing compounds can not synthesized by powder processing, the cost for its applications in solar cells and LEDs will be very high and its processing needs to be careful due to the toxicity of its precursors. In this invention, a shear scratch procedure is needed in order to extend the Ga metal and to blend with the second powders (X). After this mixing stage, a reaction at 200 to 1000 DEG C in protective atmosphere is conducted to form the GaX powders. If the reaction is conducted in air, Ga2O3 or Ga-X oxides can be obtained. To explain the feasibility of this invention, we demonstrate different kinds of Ga-containing powders involving, alloy and ceramic, oxide and non-oxide, nitride, sulfide, phosphide, selenides, intermetallic compound, Cu(In, Ga)Se2 etc. A general formula of GaX is used to present our synthesized powders, where X is symbolized for different kinds of materials in powder form.
NOVELTY - A joined structure comprises square pole or cube-form rock salt-type oxide nanoparticles with fine metal particles. Alloy nanoparticles comprise base metal containing 0.1-90 atomic% noble metal, rock salt-type oxide, and remainder of unavoidable impurities in inert gas, and have particles diameter of 1-100 nm. The alloy nanoparticles are heated with inert gas at high temperature, and contacted with hot oxidizing gas to oxidize base metal component in alloy nanoparticles which are floating in gas. The alloy nanoparticles are phase-separated from metal component to obtain joined structure.    USE - Manufacture of joined structure (claimed) used for nanodiode, resistance switching element, photoresponsive sensor adhesive and solar cell.    ADVANTAGE - The method enables stable continuous generation of highly-pure joined structure in gas phase. The square pole or cube form rock salt-type oxide nanoparticles of joined structure have high crystallinity with respect to fine metal particles.    DESCRIPTION OF DRAWING(S) - The drawing shows the rock salt-type oxide nanoparticle manufacture apparatus.    Piping (1)    Flow regulation valve (2)    Heating tube (3)    Pressure control valve (7)    Heater (B)
NOVELTY - A metal complex (I), is new.    USE - New metal complex is used for cathode of fuel cell (all claimed).    ADVANTAGE - The metal complex has excellent activity with respect to reduction of oxygen to water rapidly, without generating hydrogen peroxide.    DETAILED DESCRIPTION - A metal complex of formula (I), is new.    M=Co or Fe;    L=bi-dentate ligand of formula (a)-(c);    R1-R7=1-3C alkyl;    d,j,l=0-4;    e,f,h=0-3;    g,i,k=0-2;    X=carbon or oxygen;    Y(power)(-n)=n-valent counter anion;    n=1-4;and    nx m=4.    INDEPENDENT CLAIMS are included for the following:    (1) manufacture of metal complex (I); and    (2) method of reducing oxygen to water by catalyzing and using metal complex (I).
NOVELTY - A slag former comprises following raw materials: 30-60 wt.% sodium silicate (Na2SiO3), 20-50 wt.% silica (SiO2), 1-5 wt.% titanium dioxide (TiO2), and 1-5 wt.% alumina (Al2O3).    USE - As slag former in the formation of polycrystalline silicon medium (claimed); and in the solar battery and solar cell.    ADVANTAGE - The former avoids environmental pollution, is clean, safe, exhibits improved semiconductor photoelectric effect, exhibits improved photoelectric conversion efficiency, and has important effect in application of the solar cell. The slag former is simple, is suitable for industrial popularization, and has improved application prospect.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of using slag former in the formation of polycrystalline silicon medium, involving adding slagging agent into polycrystalline silicon medium, smelting, and purifying, where the slagging agent is the slag former.
NOVELTY - A polycrystalline silicon is prepared by taking doped with an active dopant of silicon material in quartz crucible, heating in heat-insulating cage of ingot furnace at 1535-1565 degrees C until silica materials are melted completely, adjusting temperature of bottom of quartz crucible to 1380-1420 degrees C, raising temperature to 1425-1440 degrees C at rate of 150-200 degrees C/hour for 30-90 minutes, adjusting heat insulation cage lifting speed to 6-8 mm/minute in which distance between lower cavity of heat-insulating cage and bottom of ingot furnace heat preservation layer is between 6-8 cm.    USE - Preparation of polycrystalline silicon for solar cells.    ADVANTAGE - Preparation process is stable and has fewer dislocation defects and higher cell efficiency.    DETAILED DESCRIPTION - A polycrystalline silicon is prepared by taking doped with an active dopant of silicon material in quartz crucible, heating in heat-insulating cage of ingot furnace at 1535-1565 degrees C until silica materials are melted completely, adjusting temperature of bottom of quartz crucible to 1380-1420 degrees C, raising temperature to 1425-1440 degrees C at rate of 150-200 degrees C/hour for 30-90 minutes, adjusting heat insulation cage lifting speed to 6-8 mm/minute in which distance between lower cavity of heat-insulating cage and bottom of ingot furnace heat preservation layer is between 6-8 cm; silicon material in the quartz crystal surface nucleation inner surface of quartz crucible at the bottom of active layer is formed nucleation after entering crystal growth period, controlling temperature of ingot furnace heater to 1425-1440 degrees C, adjusting heat insulation cage lifting speed to 3-5 mm/hour, cooling of ingot furnace heater in later period of crystal growth at rate of 1-2 degrees C/hour and adjusting heat insulation cage lifting speed to 6-10 mm/hour, and processing silicon material in crystal by annealing and cooling.
NOVELTY - A silicon solar cell is prepared by pre-cleaning silicon solar cells, preparing polishing solution by adding surfactant to alkaline solution, heating polishing solution at 8-10 degrees C, immersing silicon solar cell in polishing solution for 90-200 seconds, acid-washing, water-washing, and drying.    USE - Polishing of silicon solar cell (claimed).    ADVANTAGE - Method has simple operation, good polishing effect, and well matched with the traditional production line integration.
NOVELTY - A leachate containing vanadium battery electrolyte preparation method involves extracting pentavalent vanadium in a leach liquor using an extracting agent and transforming sulfuric acid, directly reducing desorption or reducing back extraction pentavalent vanadium by using reducing agent through vanadium extraction process to obtain the vanadium battery electrolyte, where the reducing agent is sulfur dioxide gas, ascorbic acid or sulfuric acid.    USE - Method for preparing a leachate containing vanadium battery electrolyte.    ADVANTAGE - The method enables preparing the leachate containing vanadium battery electrolyte in a simple, economical and eco-friendly manner with less time consumption, and high purity and electrical conductivity.
NOVELTY - A solar battery is prepared by designing titanium dioxide and silicon dioxide thin layer alternately for a solar cell composite anti-reflection film, followed by using tetrabutyl orthotitanate and ethyl orthosilicate as precursor, and ethanol as solvent, preparing titanium dioxide sol and silicon dioxide sol-gel. The prepared sol-gel is coated on a glass using impregnated coating film-pulling coating technique, followed by carrying out heat treatment to obtain a finished product.    USE - Solar battery.    ADVANTAGE - The battery has better light transmittance, and is simple to prepare.
NOVELTY - The layer has a woven high molecular polymer proton exchange membrane provided with two sides of a porous polymer nanometer fiber film. A porous polymer film surface is uniformly deposited on a layer of metal nano-particles with catalytic activity. A fuel cell core forms a porous polymer nanometer fiber film catalyst layer. Proton exchange film material is provided with salt type perfluorinated sulfonic resin. Pure high molecular polymer is polyvinylidene fluoride, polyvinyl alcohol, polyacrylonitrile, polymethyl methacrylate.    USE - Thin film catalyst layer for a fuel cell chip.    ADVANTAGE - The layer has high porosity and high specific surface area. The layer has better adhesiveness , and is uniform. The layer improves catalyst utilization rate, and improves stability of membrane electrode.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a fuel cell chip preparation method.
NOVELTY - The anti-reflection coating layer has a main structure that is formed between two mediums having different refractive index, for preventing the reflection of electromagnetic wave between two dispersive mediums. The dielectric constant of main structure is set according to the magnetic permeability space distribution property, the amplitude of electric field of electromagnetic wave, the angular frequency of electromagnetic wave, the wave admittance and wave impedance within the respective anti-reflection layer and the average time of pointing vector.    USE - Anti-reflection coating layer used in optical lens, solar cell, military microscope, stealth equipment, LED and organic LED.    ADVANTAGE - The wavelength spectrum property and the thickness limitation property of the anti-reflection coating layer can be improved, so as to reduce the optical reflection between two mediums having different refractive index. The magnetic permeability, the wave admittance and wave impedance of the electromagnetic wave can be grasped easily.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming anti-reflection coating layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a graph showing the refractive index distribution forming the non-uniformity anti-reflection coating layer.
NOVELTY - Porous layer and absorbing layer are prepared by melting copper (Cu) and gallium (Ga) in vacuum induction smelting furnace, casting, cooling, removing blank, processing to CuGa target, melting indium (In) material in vacuum induction melting furnace, casting, cooling, removing blank, processing to In target, placing alkali-free glass substrate, substrate coating material, CuGa target and In target in sputtering chamber, sputtering molybdenum, sputtering copper/indium/gallium (CIG), plating with selenium using selenide plating furnace, and removing test piece.    USE - Preparation of porous layer and absorbing layer for film flattening layer (claimed) and copper/indium/gallium thin-film solar cell.    ADVANTAGE - The preparation of porous layer and absorbing layer is environment-friendly and reduces production cost.    DETAILED DESCRIPTION - Porous layer and absorbing layer are prepared by melting Cu and Ga in vacuum induction smelting furnace, casting in 3 inches low carbon steel mold, cooling for 12 hours, removing blank, processing to 3-inch CuGa target, melting In material in vacuum induction melting furnace, casting in 3 inches low carbon steel mold, cooling for 12 hours, removing blank, processing to 3-inch In target, placing alkali-free glass substrate, substrate coating material, CuGa target and In target in sputtering chamber, sputtering molybdenum using direct current power to obtain thin film with 500 nm thickness, sputtering CG to obtain absorbing layer with 1000 nm thickness, plating with selenium using selenite plating furnace, and removing test piece.
NOVELTY - A resin composition comprises an ethylene-type copolymer resin (A), and a heat conductive filler (B), and heat conductivity of 0.5 W/m.K or more. The heat conductive filler (B) contains element(s) chosen from group II, group IV, group XI, group XII, group XIII, and group XIV. The content of heat conductive filler (B) is 100-1000 parts mass with respect to 100 parts mass ethylene-type copolymer resin (A).    USE - Resin composition is used for forming molded product for heat sink (all claimed). Uses include but are not limited to motor vehicle, light-emitting diode product, laptop personal computer, mobile telephone, projector, solar cell module, surface-side protection component, solar cell sealing material, and back surface-side protection component.    ADVANTAGE - The resin composition has excellent thermal conductivity. The molded product obtained using resin composition has excellent adhesiveness with respect to metal, antistatic property, flexibility, and mechanical strength. The electronic device and component obtained using resin composition have excellent long-term reliability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for molded product, which is obtained by molding the resin composition.
NOVELTY - The method involves providing a set of solar cells comprising a doped nanowire titanium oxide core (101), where graphene is provided on the core, and the set of solar cells comprises high-temperature photovoltaic transducers. Majority of the solar cells are aligned parallel to one another and perpendicular to a titanium foil. The titanium foil is provided with the set of solar cells that is arranged on a heat gathering surface of a thermal-conversion electricity generation apparatus to form a co-generation apparatus to convert light into electricity.    USE - Method for facilitating co-generation conversion of light into electricity using solar cells, in color discriminative retinal implant applications.    ADVANTAGE - The method enables combining opacities of graphene independent of wavelength of light, as an antenna shell surrounding the nanowires, thus ensuring maximal harvesting of incident sunlight, while coupling high solar collection efficiency of graphene-based antennas with highly efficient rectification properties of graphene/silicon-carbide-or-titanium-oxide junctions to create a new and highly efficient class of solar cells without the use of batteries, and hence optimizing electrical response to light wavelength by controlling length of the nanowires to provide color vision to visually impaired.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following:    (1) a method for forming a set of solar cells    (2) an apparatus for generation of electricity using solar energy.    DESCRIPTION OF DRAWING(S) - The drawing shows a side elevational sectional view of an object having a nanowire titanium oxide core.    Object (100)    Core (101)    Graphene shell (102)
NOVELTY - An optoelectronic component comprises a primary organic functional layer structure, a secondary organic functional layer structure, and a charge carrier pair creation layer structure between the primary organic functional layer structure and the secondary organic functional layer structure. The charge carrier pair creation layer structure contains a hole-leading charge carrier pair creation layer, and a primary electron-leading charge carrier pair creation layer. The hole-leading charge carrier pair creation layer comprises inorganic substance or an inorganic mixture.    USE - Optoelectronic component is used as white organic light emitting diode (claimed) and solar cell.    ADVANTAGE - The optoelectronic component is efficiently manufactured with reduced current density and durability, and excellent mechanical property.    DETAILED DESCRIPTION - An optoelectronic component comprises a primary organic functional layer structure, a secondary organic functional layer structure, and a charge carrier pair creation layer structure between the primary organic functional layer structure and the secondary organic functional layer structure. The charge carrier pair creation layer structure contains a hole-leading charge carrier pair creation layer, and a primary electron-leading charge carrier pair creation layer. The hole-leading charge carrier pair creation layer comprises inorganic substance or an inorganic mixture. The primary electron-leading charge carrier pair creation layer comprises an organic or organic mixture. An INDEPENDENT CLAIM is included for manufacture of optoelectronic element.
NOVELTY - The extinguishing system (1) has a battery (3) having a housing (5). An extinguishing container (7) is provided with an extinguishing medium (25). The extinguishing container is arranged as far as possible directly on the housing of the battery. The extinguishing system is designed to extinguish a fire in the battery automatically by emptying the extinguishing container. A quenching device (8) is equipped with a nozzle which is faced towards the battery to distribute the extinguishing medium, when fire occurs.    USE - Extinguishing system for batteries e.g. high-voltage batteries such as lithium-ion battery mounted in hybrid vehicle or electric vehicle (all claimed). Can also be used in lead, nickel, nickel hydrogen, nickel-iron, zinc, bromine batteries etc. in solar cells, submarines, ships, or generators in buildings.    ADVANTAGE - As the extinguishing container with the extinguishing medium is arranged as far as possible directly on the housing of the battery to extinguish fire in the battery automatically by emptying the extinguishing container, the safety of the battery is improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing extinguishing system.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the extinguishing system.    Extinguishing system (1)    Battery (3)    Housing (5)    Extinguishing container (7)    Quenching device (8)    Extinguishing medium (25)
NOVELTY - A polypeptide having a peptide fragment (I) and carbon nanotubes are added to polar medium, and carbon nanotubes are dispersed in polar medium, to obtain dispersion liquid of carbon nanotubes. The total weight mean molecular weight of peptide fragment (I) is 5000-50000.    USE - Manufacture of dispersion liquid of carbon nanotubes used for manufacturing carbon nanotubes-containing molding (all claimed). Uses include but are not limited to electron-emitting element, fuel cell, composite material, semiconductor material, scanning probe, microscope probe and electromagnetic wave-shielding material.    ADVANTAGE - The method enables manufacture of dispersion liquid of carbon nanotubes having excellent stability. The carbon nanotubes-containing molding having excellent handleability is manufactured by simple method, using the dispersion liquid of carbon nanotubes.    DETAILED DESCRIPTION - A polypeptide having a peptide fragment of formula: -(Pro-Y'-Gly)n- (I) and carbon nanotubes are added to polar medium, and carbon nanotubes are dispersed in polar medium, to obtain dispersion liquid of carbon nanotubes. The total weight mean molecular weight of peptide fragment (I) is 5000-50000.    Y'=hydroxyproline or proline;and    n=integer.    INDEPENDENT CLAIMS are included for the following:    (1) manufacture of carbon nanotubes-containing molding; and    (2) carbon nanotube dispersing agent.
NOVELTY - A hose has at least one layer of layers containing a resin composition containing vinyl alcohol-type resin (A) containing 1,2-diol-containing structural unit (I), and fluororesin (B) having polar functional group which reacts with hydroxyl group or forms hydrogen bond.    USE - Hose is used for storage container (claimed) for supplying hydrogen gas and hydrogen filling station for fuel cell for motor vehicles.    ADVANTAGE - The favorable wettability, durability and flexibility, and has high gas barrier property without causing blistering at high pressures, and hydrogen brittleness resistance.    DETAILED DESCRIPTION - A hose has at least one layer of layers containing a resin composition containing vinyl alcohol-type resin (A) containing 1,2-diol-containing structural unit of formula (I), and fluororesin (B) having polar functional group which reacts with hydroxyl group or forms hydrogen bond.    R1-R3=H or organic group;    X=single bond or joint chain;and    R4-R6=R1.    An INDEPENDENT CLAIM is included for storage container.
NOVELTY - A substrate (100) comprises base layer (101), and particles-containing layer (102) which contains particles (a) having average particle diameter of 100 nm or more and particles (b) having average particle size of 30-500 nm.    USE - Substrate is used for lighting apparatus (claimed). Uses include but are not limited to organic light emitting device, organic solar cell, organic photoconductor and organic transistor.    ADVANTAGE - The organic electronic device comprising substrate has favorable light extraction efficiency and reliability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for lamp.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the substrate.    Substrate (100)    Particles-containing layer (101)    Base layer (102)
NOVELTY - A substrate (100) has a base layer (101) and levelling layer (102) formed on the base layer. The levelling layer comprises primary particles having refractive index of 1.8 or more and average particle diameter of 50 nm or less, secondary particles having average diameter of 100 nm or more, and binder. The refractive index of primary particles is low than that of the refractive index of binder.    USE - Substrate is used for organic electronic device e.g. organic light-emitting device, organic solar cell, organophotoreceptor and organic transistor for lamp (claimed).    ADVANTAGE - The substrate is capable of forming organic electronic device having excellent light-extraction efficiency, and blocks the infiltration of humidity or gases from the outside, and controls the growth of a dark spot, thus has excellent performance and reliability.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for organic electronic device.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of substrate.    Substrate (100)    Base layer (101)    Levelling layer (102)
NOVELTY - The reactor (1) has a recovery window portion that is comprised by connector pipes (13a,13b), an airtight cover (16), and a heat-resistant material (15). The airtight cover is opened and closed at one end of connector pipe whose other end is coupled in position in which polycrystalline silicon are recovered. An elongate-shaped tool is inserted through connector pipe for performing crystalline-silicon recovery process. The mechanical shock is applied to polycrystalline silicon adhering to tetrachlorosilane gas supply nozzle (2), so as to drop silicon to lower portion of main portion.    USE - Vertical reactor for manufacturing highly purified polycrystalline-silicon material of crystalline silicon solar cell.    ADVANTAGE - Since the tool for performing crystalline-silicon recovery is used, the unnecessary operation within reactor can be avoided. The recovery efforts of highly purified polycrystalline silicon can be implemented in short time easily and safely. The productivity of highly purified polycrystalline silicon can be improved.    DETAILED DESCRIPTION - One edge of the tool is formed in an L-shape or a T-shape. The zinc gas and tetrachlorosilane gas are made to react through tetrachlorosilane gas supply nozzle and silicon-tetrachloride gas supply nozzle. The airtight cover is opened, to pick out the heat-resistant material from connector pipe. The highly purified polycrystalline silicon in the lower portion of the reactor is recovered. An INDEPENDENT CLAIM is included for a method for manufacturing highly purified polycrystalline-silicon material.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the vertical reactor.    Vertical reactor (1)    Tetrachlorosilane gas supply nozzle (2)    Connector pipes (13a,13b)    Heat-resistant material (15)    Airtight cover (16)
NOVELTY - Gasket (48) comprises: a first layer (48A) of fibrous ceramic material having a first compressibility; a second layer (48B) of fibrous ceramic material having a second compressibility; and a third layer (48C) of fibrous ceramic material having third compressibility, where the third layer is positioned between and engaged with the first layer and the second layer and the third compressibility is less than the first compressibility and less than the second compressibility.    USE - The gasket is useful for a manifold seal for a fuel cell system (claimed).    ADVANTAGE - The gasket: is sufficient to maintain a predetermined thickness, wettability of to prevent electrolyte migration, to maintain electrical isolation and to compensate for long term dimensional changes over the life of the fuel cell; and utilizes ceria felt that greatly improves mechanical properties required for the fuel cell manifold sealing while maintaining acceptable electrolyte migration by maintaining sufficient gasket thickness.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross-sectional view of the gasket.    Mating surface (24)    Gasket (48)    First layer (48A)    Second layer (48B)    Third layer (48C)
NOVELTY - The manufacturing method involves forming an insulating film over a substrate (106), and a transistor over the insulating film. An interlayer insulating film is formed over the transistor, and a second opening (105) is formed in the interlayer insulating film. The third opening and conductive film are formed over the interlayer insulating film, and the substrate is thinned from the rear surface of the substrate to expose a bottom portion of the conductive film in the third opening.    USE - Manufacturing method for semiconductor device for display, e.g. LCD, organic electroluminescent (EL) display, and photoelectric conversion component such as photo sensor or solar cell.    ADVANTAGE - Suppresses the diffusion of alkali metal or alkaline earth metal into the semiconductor film from the substrate and the adverse effect on characteristics of a semiconductor component since the insulating film serves as a base film. Suppresses the moisture or impurity component that enters a semiconductor component from the outside since the glass substrate serves as a protective film. Reduces the physical damage such as crack generation during formation of opening or film reduction during etching, and improves the intensity of the insulating film by modifying the surface of the insulating film.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the manufacturing method for semiconductor device.    Opening (105)    Substrate (106)
NOVELTY - A bicontinuous porous body comprises macropores defined by a wall, where the macropores has diameter of greater than 0.1 mu m. The macropores interconnect, forms continuous network of pores that spans the body, permitting the flow of liquid or gas into and through the body. The wall of the macropores comprise continuous layer of metal and/or metal oxide.    USE - As bicontinuous porous body (claimed) useful as packing materials in chromatography, as catalysts, or as electrocatalysts and used for chemical conversions, such as combustion of liquid and gaseous fuels, conversion of liquid and gaseous fuels to electricity, and conversion of electricity to liquid and gaseous fuels. The porous materials also used in production of metal and metal oxide nanowires used in electrically and thermally conducting fabric, and information storage; in fuel cells as fuel cell separator; in environmental remediation; and for heat dissipation applications.    ADVANTAGE - The bicontinuous porous body has precisely controlled microstructure and nanostructure that includes control over the spatial distribution of number of metal and metal oxides within the same material. The porous materials do not release nanoparticles of metal when used. This is environmentally advantageous.
NOVELTY - Wavelength converting material comprises a phosphate compound (I).    USE - The wavelength converting material is useful in optoelectronic apparatus (claimed) such as LED, plasma emission device, solar cell, and other solid-state illumination device.    ADVANTAGE - The wavelength converting material: is capable of being excited by UV or blue light, and by a first light having a dominant wavelength of 250-450 nm; is capable of being excited to emit near infrared light and to emit a second light having a dominant wavelength of 900-1100 nm (claimed); and exhibits improved thermal stability.    DETAILED DESCRIPTION - Wavelength converting material comprises a phosphate compound of formula (A1B1l-m-nPO4:M1m N1n) (I).    A1 = alkali metal element;    B1 = alkaline earth metal element;    M1 = sensitizer comprising a rare-earth element;    N1 = acceptor comprising a rare-earth element;    m = greater than 0 and less than or equal to 0.03;    n = greater than 0 and less than or equal to 0.3; and    l = not defined.    INDEPENDENT CLAIMS are also included for:    (1) synthesizing the wavelength converting material, comprising providing a mixture of precursors containing phosphate of A1, carbonate of B1, oxide of M1 and oxide of N1, and sintering the mixture in a furnace under a condition of a temperature of 1000-1500 degrees C, a firing time of 1-8 hours and/or an atmosphere containing hydrogen gas;    (2) an optoelectronic apparatus (a1), comprising a light-emitting device capable of radiating a first light with a dominant wavelength, and the wavelength converting material positioned on the light-emitting device for receiving the first light to emit a second light; and    (3) an optoelectronic apparatus (a2) comprising the wavelength converting material, and an optoelectronic device with the wavelength converting material formed on it absorbing the second light and converting photon energy of the second light into electrical energy.
NOVELTY - A shirasu structure (1) comprises thin film of shirasu (5) deposited on base material (3) using physical vapor deposition method.    USE - Shirasu structure is used as interior material for residence, exterior material for residence and pavement and solar cell.    ADVANTAGE - The shirasu structure has excellent deodorant property, hygroscopic property, optical characteristics, mechanical characteristics, thermal characteristics, biological characteristics, chemical property and electrical property and suppressed peeling from base material.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of shirasu structure.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of shirasu structure.    Shirasu structure (1)    Base material (3)    Thin film of shirasu (5)
NOVELTY - An electrolyte solution comprises nonaqueous solvent, electrolyte and fluorine containing cyclic-sulfonate-ester compound.    USE - Electrolyte solution is used for electrochemical devices e.g. lithium ion secondary batteries (claimed) used in electric vehicles, solar cells and capacitors.    ADVANTAGE - An electrolyte solution provides an electrochemical device has excellent device properties, long-term durability and capacitance. The lithium ion secondary batteries produced has excellent battery characteristics and battery capacity.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for lithium ion secondary battery.
NOVELTY - The method involves separating a CIGS absorber layer (3) using micro tempering. The electric conductivity of the CIGS absorber layer is increased locally differentiated by energy input by irradiation.    USE - Method for patterning copper indium gallium diselenide (CIGS) absorber layer on substrate within stack of layers of solar cell.    ADVANTAGE - The throughput of patterning CIGS absorber layer can be improved. The cost for patterning CIGS absorber layer can be reduced with less energy consumption.    DESCRIPTION OF DRAWING(S) - The drawings show the sectional views illustrating the method for patterning CIGS absorption layer.    Substrate (1)    Contact layers (2,5)    CIGS absorber layer (3)    Buffer layer (4)    Patterning (P1-P3)
NOVELTY - Crystal orientation of seed crystal (2) of silicon is inherited. The silicon melt solution (4) is arranged in bottom of crucible (1), and one-direction growth is carried out from bottom to top to obtain silicon ingot. The seed crystal contains single-crystal silicon block having different crystal orientation. The boundary position between single-crystal silicon blocks is set from crucible wall at distance of 5-50 mm. The boundary position (5) of seed crystal is inherited and crystal grain boundary is formed in grown silicon ingot.    USE - Manufacture of silicon ingot used for solar cells.    ADVANTAGE - The method enables manufacture of economical, highly efficient and quality silicon ingot with high ratio of single crystal portion. The nucleation of crystal grain with crucible wall prevents expansion area of crystal growth.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram explaining the growth of silicon ingot within crucible and suppression of polycrystallization by crystal grain boundary.    Crucible (1)    Seed crystal (2)    Silicon melt solution (4)    Boundary of silicon block of seed crystal (5)
NOVELTY - A silicon-crystal casting furnace has a crucible depositing silicon crystal from a silicon melt solution, and a gas introduction apparatus transducing inert gas into the crucible where inert gas contacts an inner surface of portion comprising tungsten.    USE - Casting furnace is used for manufacturing silicon crystal for manufacturing solar cell.    ADVANTAGE - The casting furnace manufactures silicon crystal with reduced carbon content, and enhances efficiency of solar cell economically.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon-crystal casting furnace. (Drawing includes non-English language text)
NOVELTY - Hydrogen is generated by irradiating UV ray to hydrogen source gas containing ammonia gas introduced into reactor.    USE - A hydrogen generation method for fuel-supply source of fuel cell for driving a mobile body.    ADVANTAGE - Hydrogen gas can be produced by a high formation rate, and photolysis of ammonia can be performed at normal temperature atmosphere, without requiring catalyst.    DETAILED DESCRIPTION - Hydrogen is generated by irradiating UV ray to hydrogen source gas containing ammonia gas introduced into reactor. The UV ray with light at wavelength of less than or equal to 200 nm under conditions which satisfy equation N(NH3)=(1.223x Qx C(NH3)x t)x 1021/(273+T)= greater than or equal to 20x 1019 (1) is irradiated, where Q (L/minute) is gas flow rate of hydrogen source gas introduced into the reactor, C(NH3) (vol.%) is concentration of the ammonia gas in the hydrogen source gas introduced into the reactor, T ( degrees C) is gas temperature in the reactor, N(NH3) is the number of ammonia molecules in the hydrogen source, and t (s) is retention time in the reactor. An INDEPENDENT CLAIM is included for hydrogen generating apparatus (10) comprising ammonia supply part (11) which stores ammonia and produces hydrogen from ammonia, reactor with which hydrogen source gas containing ammonia gas supplied from ammonia supply part is introduced, light source which irradiates UV ray at wavelength of less than or equal to 200 nm with respect to the hydrogen source gas introduced into the reactor, and control mechanism which controls irradiation of UV ray from the light source.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a hydrogen generating apparatus.    Hydrogen generating apparatus (10)    Ammonia supply part (11)    Carrier gas supply part (12)    Pipe (13, 14)    Gas mixing part (15)
NOVELTY - Manufacture of carbon, metal tin and/or tin oxide composite nanosheet involves preparing aqueous solution of polyamine, preparing tin ionic compound containing tin cation and acid radical anion, depositing insoluble composite material which mixes aqueous solution of polyamine and tin ionic compound, collecting the precipitated composite material, and heat-firing the dried insoluble composite material.    USE - Manufacture of carbon, metal tin and/or tin oxide composite nanosheet (claimed) used as hydrogen storage material of energy-related raw material of lithium cell periphery, solar cell, fuel cell, catalyst material for chemical reactions and catalyst for exhaust gas purifications.    ADVANTAGE - The method economically provides carbon, metal tin and/or tin oxide composite nanosheet by a simple process.
NOVELTY - A carbon-iron-based crystalline complex nanosheet is manufactured by preparing aqueous solution (A) of polyamine, preparing aqueous solution (B) of iron compound consisting of iron cation and acid radical anion, mixing aqueous solution (A) and aqueous solution (B), depositing insoluble complex (C) containing polyamine and iron ion from liquid mixture, recovering and drying component (C), and heating and firing component (C).    USE - Manufacture of carbon-iron-based crystalline complex nanosheet for hydrogen storage material, electromagnetic wave absorbing material, material of lithium cell, solar cell, or fuel cell, material used for exhaust gas treatment, and/or material used for adsorption or removal of oil in waste.    ADVANTAGE - Carbon-iron-based crystalline complex nanosheet can be easily manufactured at low cost.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for carbon-iron-based crystalline complex nanosheet.    DESCRIPTION OF DRAWING(S) - The drawing shows a transmission electron microscope image of iron complex after baking in nitrogen atmosphere.
NOVELTY - A glass comprises 15-60 %mass silicon dioxide, 0-35 %mass boron trioxide, 0-15 %mass metal oxide, 25-55 %mass other metal oxide and 0.1-7 %mass aluminum oxide, based on oxide conversion. The ratio of sum of zinc oxide, magnesium oxide and calcium oxide with respect to sum of strontium oxide and barium oxide is 0.3 or less.    USE - Glass is used for coating metal substrate (claimed). Uses include but are not limited to electronic component of piezoelectric vibrator, solar cell, plasma display panel, vacuum fluorescent display, organic electroluminescence display, liquid-crystal display, field emission display, micro-electro mechanical system, integrated circuit package, crystal oscillator, etc.    ADVANTAGE - The metal substrate coated using the glass has high heat resistance and surface flatness. The metal substrate warpage is suppressed during the formation of the glass into a glass layer.    DETAILED DESCRIPTION - A glass comprises 15-60 %mass silicon dioxide, 0-35 %mass boron trioxide, 0-15 %mass metal oxide (R2O, where R is lithium, sodium or potassium), 25-55 %mass other metal oxide (R'O, where R' is magnesium, calcium, strontium, barium or zinc), and 0.1-7 %mass aluminum oxide, based on oxide conversion. The ratio of sum of zinc oxide, magnesium oxide and calcium oxide with respect to sum of strontium oxide and barium oxide is 0.3 or less.
NOVELTY - A composite sheet (10) comprises a matrix (1) including a silicone-based resin, and a reinforced material (2) impregnated in the matrix, and has Young's modulus of 2 MPa or more, and surface roughness (Ra) of 50 nm or less.    USE - Composite sheet is used for flexible substrate for display device (all claimed) e.g. liquid crystal display device, organic electroluminescent display device substrate for color filter, substrate for solar cell, touch panel and optical device.    ADVANTAGE - The composite sheet has excellent flexibility, low thermal expansibility, excellent heat resistance, transparency, and suppressed generation of surface roughness.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of composite sheet, which involves impregnating reinforced material in matrix, and solidifying.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of composite sheet.    Matrix (1)    Reinforced material (2)    Composite sheet (10)
NOVELTY - The apparatus (100) has a tape supply unit (120) supplying an adhesive tape (1) onto a film unit (30). A set of pins (140) is vertically descendible toward the adhesive tape to attach a portion of the film unit to an adhesive surface of the adhesive tape and sequentially vertically liftable after the portion of the film unit is attached to the adhesive surface of the adhesive tape. A tape recovery unit (130) recovers the adhesive tape including the portion of a film (20) attached and applies tension force to the adhesive tape after the portion of the film unit is adhered to the tape.    USE - Film peeling apparatus for detaching a region of a film unit on a substrate. Can also be used for manufacturing an organic LED apparatus and other film peeling application such as in manufacturing solar cells, semiconductor devices or liquid crystal display apparatuses.    ADVANTAGE - The tape recovery unit recovers the adhesive tape including the portion of the film attached and applies the tension force to the adhesive tape after the portion of the film unit is adhered to the adhesive tape so as to readily detach a portion of the region of the film located at an inner region of the film by the set of pins without damaging surrounding regions of the film.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a film peeling apparatus with detachment of a remaining region of a film unit from the film.    Adhesive tape (1)    Film (20)    Film unit (30)    Film peeling apparatus (100)    Tape supply unit (120)    Tape recovery unit (130)    Pins (140)
NOVELTY - Substituted bis-tridentate ruthenium and osmium carbene complexes (Q), are new.    USE - (Q) are useful in an organic light emitting device (claimed) and optoelectronic devices such as organic solar cells, where the organic light emitting device is useful in flat panel displays, illumination device, backlighting device, computer monitors, televisions, billboards, lights for interior or exterior illumination and/or signaling, heads up displays, fully transparent displays, flexible displays, laser printers, telephones, cell phones, personal digital assistants (PDAs), laptop computers, digital cameras, camcorders, viewfinders, micro-displays, vehicles, a large area wall, theater or stadium screen.    ADVANTAGE - (Q) efficiently and economically provide the organic light emitting device with improved performance.    DETAILED DESCRIPTION - Substituted bis-tridentate ruthenium and osmium carbene complexes (Q) of formulae (I)-(VII), are new. An INDEPENDENT CLAIM is included for an organic light emitting device (100) comprising an anode (120), a cathode (160) and an emissive layer, where the emissive layer comprises (Q).    DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of an organic light emitting device.    Organic light emitting device (100)    Substrate (110)    Anode (115)    Hole injection layer (120)    Cathode. (160)
NOVELTY - Preparing microbial fuel cell anode bioreductive graphene oxide comprises (i) inoculating Staphylococcus strain in microbial fuel cell anodic solution, adding the anodic bacterial solution into the microbial fuel cell anode chamber, allowing it to stand and culturing in a constant-temperature culture box, (ii) mixing graphene oxide suspension liquid and anodic bacteria solution, allowing it to stand and culturing in an constant-temperature culture box, and (iii) subjecting graphene oxide for bioreduction, allowing it to stand, centrifuging, cleaning, precipitating and drying.    USE - The method is useful for preparing microbial fuel cell anode bioreductive graphene oxide (claimed).    ADVANTAGE - The method uses microbial fuel cell anode blended with microorganism for decomposing organic matter and bioreduction of graphene oxide; has simple operation steps, and quick reducing speed; and prepares graphene with less layer and less defect.
NOVELTY - Wood cellulose nano fiber/resin composite film prepared by pre-processing using mechanical treatment method, is claimed.    USE - The wood cellulose nano fiber/resin composite film is useful for a bending organic LED, a solar battery and e-paper base material.    ADVANTAGE - The composite film has improved tensile strength, elastic modulus of 6-7 GPa, coefficient of thermal expansion of 20-150, light transmittance of 60-80%, high strength and high size stability.
NOVELTY - Hexachloroplatinic acid aqueous solution and transition metal iron salt precursor solution are mixed, sodium citrate protective agent is added, stirred, carbon carrier material is added, ultrasonic treatment is performed, uniformly stirred, aqueous sodium borohydride reducing agent is added, filtered, filter cake is washed, dried in vacuum and ground, to obtain carbon-containing catalyst. Heat-treatment is performed for obtained product and cooled to room temperature, to obtain ferromagnetic catalyst.    USE - Manufacture of catalyst for cathode for ferromagnetic fuel cell.    ADVANTAGE - The method efficiently provides catalyst having high reduction activity by simple and economical process in short period of time.
NOVELTY - A steel comprises 0.18-0.30 %mass carbon, 6-9 %mass nitrogen, 8-20 %mass cobalt, 1-6 %mass molybdenum, 1-6 %mass chromium, 0.5-1.3 %mass aluminum, 0.1 %mass or less titanium, 0.010 %mass or less nitrogen, 0.010 %mass or less oxygen and remainder of iron and unavoidable impurities.    USE - Steel is used for high-strength high-fatigue-strength saw wires for cutting of single-crystal silicon ingot and ceramic hard material. Uses include but are not limited to solar cell, semiconductor, light-emitting diode and motor.    ADVANTAGE - The steel has excellent toughness, high strength, tensile strength of 2400 MPa or more and elongation of 5% or more, and provides saw wire having high strength and fatigue strength.
NOVELTY - A boron-gallium codoped polysilicon comprises 1x 1016-2x 1016 cm-3 boron or phosphorus, and 1x 1016-2x 1018 cm-3 gallium metal in which photo-decay rate is not less than 0.5%.    USE - A boron-gallium codoped polysilicon for solar cells.    ADVANTAGE - Product reduces or avoids generation of boron-oxygen complexes, reduces light-induced decay of battery, and has good stability in light.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of boron-gallium codoped polysilicon which involves paving seed crystal on quartz crucible, adding silicon raw material on seed crystal, metal gallium, and electroactive doping agent boron-silicon alloy, placing crucible into ingot furnace, vacuumizing, heating ingot furnace until completely melted, partly melting seed crystal, reducing heater power, insulating with open cage ingot furnace, starting solidification crystal at bottom, controlling temperature gradient, directional solidification forming boron-gallium high-efficient codoped polycrystalline silicon ingot, and processing.
NOVELTY - A thiophene derivative is new.    USE - A thiophene derivative for conductive material, organic light-emitting material (all claimed), and solar cell sensitizing dye.    ADVANTAGE - Thiophene derivative has excellent relative quantum yield, good solubility in presence of aromatic ring, and adjustable light-emission color.    DETAILED DESCRIPTION - A thiophene derivative of formula (1) is new.    X=compound of formulae (3)-(9); and    b=1-10 provided that R1 and R2 are connected by carbon atoms to form 1st heterocyclic ring and R3 and R4 are connected by carbon atoms to form 2nd heterocyclic ring.    A=S, O, N, or Se; and    S1-S4=H or 1-8C alkyl or alkoxy.    INDEPENDENT CLAIMS are included for:    (1) conductive material comprising thiophene derivative; and    (2) organic light-emitting material comprising thiophene derivative.
NOVELTY - The photoelectric conversion element (1) has a n-type-semiconductor layer (4) that contains bismuth trisulfide. A p-type-semiconductor layer (5) contains nickel oxide. The p-type-semiconductor layer contains a type of metallic element selected from the aluminum and lithium group. The atomic percentage of the p-type-semiconductor layer lies in the range of 7 to 50 percent.    USE - Photoelectric conversion element for use in a photoelectric conversion element array of a solar cell module (all claimed) for converting light, such as a sunlight and an interior lamp light into electricity.    ADVANTAGE - The n-type-semiconductor layer contains bismuth trisulfide and the p-type-semiconductor layer contains nickel oxide, and thus ensures a low cost photoelectric conversion element and photoelectric conversion element array along with sufficient photoelectric conversion efficiency without using a specific toxicity element, and hence ensures that the photoelectric conversion element used in the solar cell is effective.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional of a photoelectric conversion element.    Photoelectric conversion element (1)    Transparent substrate (2)    Transparent electrode film (3)    N-type-semiconductor layer (4)    P-type-semiconductor layer (5)
NOVELTY - The assembly (10) has first and second flat portion that are coplanar and are separated by crest (22,24) and valley portion (26). The first photovoltaic solar module (30) is securable to both the first and second flat portion of the corrugated sheet (20), such that the first photovoltaic solar module spans across the crest or valley portions between the first and second flat portions. The crest and valley portions of corrugated sheet are sinusoidal or trapezoidal. The photovoltaic solar module is made from copper indium gallium selenide solar cells, and has a width of less than 300 millimeter.    USE - Solar sheet assembly for roofing or walling of building e.g., carport, verandah and shed, using Building Integrated Photovoltaic modules.    ADVANTAGE - Enables to integrate photovoltaic modules with corrugated roof or wall sheeting without compromising integrity of corrugated profile while minimizing material cost associated with roofing and solar installation, since the photovoltaic solar module can spans across the crest or valley portions between the first and second flat portions. Enables to allow airflow and cooling beneath solar modules to optimize electric output since the flat crest portions of the profiles provide raised sections.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a sheet.    DESCRIPTION OF DRAWING(S) - The drawing shows the perspective and sectional end views of the solar sheeting assembly.    Assembly (10)    Corrugated sheet (20)    Crest (22,24)    Valley portion (26)    Photovoltaic solar module (30)
NOVELTY - The method involves preparing lithium doped metal oxide such as lithium nitride, lithium cobalt oxide and lithium manganese dioxide. Vapor grown carbon fibers of constant rate is blend of predetermined range, in the lithium doped metal oxide. The vapor grown carbon fibers comprises a particle whose diameter is of predetermined range.    USE - Method for manufacturing electrode material of hybrid capacitor (claimed) used in secondary battery such as high-capacity lithium-ion secondary battery and lithium ion polymer battery mounted in vehicle such as hybrid electric vehicle, electric vehicle and fuel cell vehicle.    ADVANTAGE - The output characteristic of the hybrid capacitor can be improved so that manufacture of battery can be enhanced. The stable output supply can be ensured by the battery. The lifetime of the battery can be improved.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a hybrid capacitor.    DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating the charge and uncharge-conduct property of the electrode material of the hybrid capacitor.
NOVELTY - The method involves evaporating mixing gas in a poly-silicon seed bar. The mixing gas is provided with silicon precursor chemical compound gas and dopant precursor gas that are supplied to a reactor inner portion. A doped poly-silicon layer part is arranged in the poly-silicon seed bar of the reactor inner portion. The silicon precursor chemical compound gas is made from combination of monosilane, trichlorosilane and silane tetrachloride. A solar cell body is made of quartz, silicon carbide, sapphire, graphite, silicon nitride film, boron, indium, phosphorus and arsenic.    USE - Method for manufacturing a polycrystalline silicon wafer of a solar cell.    ADVANTAGE - The method enables reducing processing stage, process time and productivity cost. The method enables improving process energy. The method enables reducing pollution problem during poly-silicon crushing process and providing high-quality.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a polycrystalline silicon wafer of a solar cell.'(Drawing includes non-English language text)'
NOVELTY - The solar cell apparatus (109) has a molybdenum contact layer (103), and an annealed layer which includes zinc and sulfur directly adjacent to the molybdenum contact layer. The molybdenum disulfide is not located between molybdenum contact layer and annealed absorber layer (104). The buffer layers (105,106) are adjacent to the annealed absorber layer. The zinc sulfide is not provided between the annealed absorber layer and molybdenum contact layer. The absorber layer is copper zinc tin and sulfur layer, while a buffer layer comprises an intrinsic zinc oxide layer.    USE - Solar cell apparatus.    ADVANTAGE - Reduces the efficiency of the final solar cell apparatus since the zinc sulfide may be localized at the border of the absorber layer adjacent to the molybdenum disulfide layer.    DESCRIPTION OF DRAWING(S) - The drawing shows the schematic illustration of the solar cell structure.    Solar cell structure (100)    Substrate (101)    Epoxy glue (102)    Molybdenum contact layer (103)    Absorber layer (104)    Buffer layers (105,106)    Electrodes (108)    Solar cell apparatus (109)
NOVELTY - The fabrication method involves forming a polysilicon emitter (108) over a back surface of an N-type silicon substrate (101) on the backside of the solar cell then forming a P-type dopant source (461) over the polysilicon emitter. A capping layer (462) is formed over the P-type dopant source then diffusing P-type dopants from the P-type dopant source to the polysilicon emitter to form a backside junction with the N-type silicon substrate. The N-type dopants are diffused into a front surface of the N-type silicon substrate.    USE - Fabrication method of solar cell used in e.g. power generation plant.    ADVANTAGE - The N-type silicon substrate has a long lifetime while first N-type doped region provides low front surface recombination and improves lateral conductivity whilst not compromising the blue response of the solar cell. The second N-type region provides low contact resistance and minimizes contact recombination. The textured front side surface and the silicon nitride layer help improve solar radiation collection efficiency. Lowers fabrication cost when drive-in step is performed in a diffusion furnace.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the solar cell illustrating a step in the fabrication method.    N-type silicon substrate (101)    Polysilicon emitter (108)    Textured surface (113)    P-type dopant source (461)    Capping layer (462)
NOVELTY - The method comprises: forming a copper indium gallium precursor film on a substrate; heating (800) the substrate to a first temperature of 350-400 degrees C in a selenium containing atmosphere at a pressure of 600-800 torr; heating (804) the substrate to a second temperature of 400-550 degrees C in the selenium containing atmosphere at a pressure of 600-800 torr; and heating (806) the substrate to a third temperature of 550-650 degrees C in an inert gas at a pressure of 600-800 torr. The method is performed in a batch system, a rapid thermal processing system or an in-line system.    USE - The method is useful for selenizing a copper-indium-gallium precursor film at high temperature (claimed) in a substrate of a solar cell that is useful in residential rooftops, commercial rooftops, utility-scale photovoltaic projects, building integrated photovoltaic projects, building applied photovoltaic projects, photovoltaic in electronic device applications and photovoltaic in clothing applications.    ADVANTAGE - The method enables effectively selenizing the copper indium and gallium films with high performance, controlled gallium distribution, uniform band gap, improved open circuit voltage, reduced structural defects, and reduced series resistance losses.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for processing a substrate.    DESCRIPTION OF DRAWING(S) - The figure shows a flow chart of a method for selenizing the copper-indium-gallium precursor film at high temperature.    Heating the substrate to a first temperature in a selenium containing atmosphere (800)    Performing partial selenization of a temperature (802)    Heating the substrate to a second temperature in the selenium containing atmosphere (804)    Heating the substrate to a third temperature in an inert gas. (806)
NOVELTY - The method involves forming insulating film in surface of silicon carbide substrate. The excitation light and measurement wave are irradiated with respect to region corresponding to measurement region on insulating film. The second carrier lifetime in silicon carbide substrate is calculated based on reflective measurement wave reflected in region and transmission measurement wave to transmit region. The interface of the silicon carbide substrate and insulating film are evaluated (S5) from corresponding carrier lifetimes.    USE - Method for evaluating interface of semiconductor substrate such as silicon wafer such as metal oxide semiconductor (MOS) device, and solar cell and insulating film.    ADVANTAGE - Since evaluating interface of silicon carbide substrate and insulating film from corresponding carrier lifetimes, even when silicon carbide substrate is used as semiconductor substrate, the interface of the semiconductor substrate and the insulating film formed in the surface of the silicon carbide substrate, can be evaluated accurately.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an interface evaluation apparatus of the semiconductor substrate and the insulating film.    DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the interface evaluation apparatus of the semiconductor substrate and insulating film. (Drawing includes non-English language text)    Step for installing on stage the passivation unit carrying out the passivation process of silicon carbide substrate (S1)    Step for measuring first carrier lifetime (S2)    Step for terminating the dangling bond of the surface of silicon carbide substrate (S3)    Step for measuring second carrier lifetime (S4)    Step for evaluating interface of substrate and insulating film (S5)
NOVELTY - The solar cell has a light absorption layer that consists of a superlattice structure which is laminated by turning the barrier layer (102) made from a silicon carbide, silicon oxide, and silicon nitride materials with a band gap greater than the semiconductor layer (101) made of silicon. The thickness of semiconductor layer and barrier layer is about 5nm and 3nm respectively.    USE - Solar cell used as natural energy utilization device.    ADVANTAGE - Since the barrier layer made from material with band gap greater than the semiconductor layer, the characteristic deterioration of the solar cell accompanying a temperature rise can be suppressed. Since the layer thickness of the barrier layer is within 1-3nm, the resistance of the device can be suppressed.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the partial structure of the solar cell.    Semiconductor layer (101)    Barrier layer (102)
NOVELTY - Use of metal-free organonitrogen compound is claimed. The organonitrogen compound comprises at least two five- or six- diatomic annealed rings, in which at least eight centered conjugated pi -electron system are occurred in at least three redox states, as redox-active substance in an energy storage.    USE - Use of metal-free organonitrogen compound as redox-active substance used in redox electrolyte for energy storage accumulator, fuel cell and redox flow battery (all claimed) for stationary and mobile applications.    ADVANTAGE - The redo flow battery comprising the metal-free organonitrogen compound has high energy density.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for redox electrolyte, which comprises at least one supporting electrolytes and metal-free organonitrogen compound.
NOVELTY - Manufacture of gas-barrier film (10A) involves coating ionizing radiation-hardenable resin composition containing ionizing radiation-hardenable resin and ultraviolet-light resistant deterioration agent on base material (1), irradiating an electron beam to the coated ionizing radiation-hardenable resin composition, forming organic layer (2), and then forming inorganic layer (3) on organic layer. The ionizing radiation-hardenable resin is resin which forms hardened material containing 50 %mass or more high-molecular compound having glass transition temperature of 17 degrees C or more.    USE - Manufacture of gas-barrier film used for apparatus e.g. display apparatus and electric power generating apparatus (all claimed). Uses include but are not limited to liquid-crystal display element, thin-film transistor, solar cell, touchscreen, electronic paper, packaging material of foodstuff and medical supplies, and electronic device.    ADVANTAGE - The method provides gas-barrier film having favorable ultraviolet light resistant deterioration property.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for gas-barrier film, which has base material, organic layer formed on base material, and inorganic layer formed on organic layer.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the gas-barrier film.    Base material (1)    Organic layer (2)    Inorganic layer (3)    Gas-barrier film (10A)    Single surface of base material (S1)
NOVELTY - A glass plate contains 50-75 mol% silicon dioxide, 1-25 mol% alumina, 0-3 mol% boron trioxide, 0-15 mol% magnesium oxide, 0-15 mol% calcium oxide, 0-12 mol% strontium oxide, 0-12 mol% barium oxide, 0-5 mol% zirconium oxide, 5-30 mol% sodium oxide, and 0-20 mol% potassium oxide.    USE - Glass plate for manufacturing copper-indium-gallium-selenium solar cell (all claimed).    ADVANTAGE - The copper-indium-gallium-selenium solar cell formed using the glass plate has improved battery efficiency.    DETAILED DESCRIPTION - A glass plate contains 50-75 mol% silicon dioxide, 1-25 mol% alumina, 0-3 mol% boron trioxide, 0-15 mol% magnesium oxide, 0-15 mol% calcium oxide, 0-12 mol% strontium oxide, 0-12 mol% barium oxide, 0-5 mol% zirconium oxide, 5-30 mol% sodium oxide, and 0-20 mol% potassium oxide. When the amount of alumina is less than 1-7 mol%, the amount derived from relation: 1.5Na2O+3K2O-0.5MgO-0.75CaO-SrO-BaO-0.25Al2O3, is 10 mol% or more. When the amount of alumina is 7-15 mol%, the amount derived from relation: Na2O+3K2O-0.5MgO-0.75CaO-SrO-BaO-0.5Al2O3 is 10 mol% or more. When the amount of alumina is 15-25 mol%, the amount derived from relation: 1.25Na2O+3K2O-0.5MgO-0.75CaO-SrO-BaO-1.25Al2O3 is 10 mol% or more. INDEPENDENT CLAIMS are included for the following:    (1) copper-indium-gallium-selenium solar cell; and    (2) manufacture of copper-indium-gallium-selenium solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of copper-indium-gallium-selenium solar cell.    Copper-indium-gallium-selenium solar cell (1)    Glass substrate (5)    Lower electrode (7)    Copper-indium-gallium-selenium layer (9)    Buffer layer (11)    Transparent conductive film (13)
NOVELTY - Brightness adjustment method of wavelength conversion nanoparticles involves manufacturing wavelength conversion nanoparticles in which metal ion (M1) as luminescent center which generate light of specific wavelength is doped with inorganic nanoparticles in solution having predetermined pH, and reducing pH of the obtained solution (A) in which wavelength conversion particles are dispersed to a pH other than predetermined pH.    USE - Brightness adjustment method of wavelength conversion nanoparticles (claimed) used for light-emitting diode and solar cell.    ADVANTAGE - The wavelength conversion nanoparticles have excellent light-emitting luminance, and convert ultraviolet ray into visible ray, and improve efficiency of solar cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for wavelength conversion nanoparticles.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining brightness adjustment method of wavelength conversion nanoparticles.    Glass container (1)    Space (3)    Opening (5)    Rubber stopper (7)    PH-measurement device (9)
NOVELTY - Brightness adjustment method of wavelength conversion nanoparticles involves manufacturing wavelength conversion nanoparticles in which metal ion (M1) as luminescent center which generate light of specific wavelength is doped with inorganic nanoparticles in solution having predetermined pH, and supplying gas containing oxygen into the solution (A) in which the wavelength conversion nanoparticles are dispersed.    USE - Brightness adjustment method of wavelength conversion nanoparticles (claimed) used for light-emitting diode and solar cell.    ADVANTAGE - The wavelength conversion nanoparticles have excellent light-emitting luminance, and convert ultraviolet ray into visible ray, and improve efficiency of solar cell.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for wavelength conversion nanoparticles.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining brightness adjustment method of wavelength conversion nanoparticles.    Glass container (1)    Space (3)    Opening (5)    Rubber stopper (7)    PH-measurement device (9)