NOVELTY - The method involves forming an interdigitated back contact (144) on a crystalline silicon substrate (152) having dopant conductivity. A front surface field structure is formed on the substrate by forming a p-doped crystalline layer (154) on the substrate and by forming a p-doped noncrystalline layer (156) on the crystalline layer, where the crystalline layer and the noncrystalline layer are doped with dopants having opposite dopant conductivity than conductivity of the substrate. A p-doped interlayer is formed between a p-doped noncrystalline layer and a transparent electrode (116).    USE - Method for forming a photovoltaic device i.e. inter-digitated back-contact heterojunction photovoltaic cell, for an application. Uses include but are not limited to an integrated circuit chip application for computer products, a solar cell application for providing power to electronic devices, homes, buildings and vehicles, a light sensitive device application and a large scale device/small scale device application for calculators and solar powered lights.    ADVANTAGE - The method enables thinner layers to be employed for layers of a front surface field junction as compared to a back side of a cell to reduce absorption loss of the photovoltaic device. The method enables transparent conductive oxide material of an electrode to improve reflection from a back surface of the electrode. The method enables the P-plus doped interlayer to be made of narrow band-gap material and to be inserted between doped layers at an emitter contact to improve carrier transport for the photovoltaic device.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photovoltaic device having a front surface field contact with a p-doped crystalline layer and a p-doped noncrystalline layer and an interdigitated back contact.    Transparent electrode (116)    Interdigitated back contact (144)    Emitter contacts (146)    Crystalline silicon substrate (152)    Crystalline layer (154)    Noncrystalline layer (156)