NOVELTY - The method comprises: preparing a substrate; depositing a first amorphous silicon layer on the substrate; forming a first polycrystalline silicon layer by irradiating electronic beam on the first amorphous layer for large area crystallization process; depositing the second amorphous silicon layer over the first polycrystalline silicon layer; forming a second polycrystalline silicon layer by irradiating the electronic beam on the second amorphous silicon layer; and irradiating electronic beam to the silicon layer at specific intervals to form a P-type silicon thin film.    USE - The method is useful for manufacturing a solar cell (claimed).    ADVANTAGE - The method is capable of economically preparing the solar cell with low metal residue and high quality by crystallizing the amorphous silicon thin film in a rapid manner with high crystallization fraction and large grain size.    DETAILED DESCRIPTION - The method comprises: preparing a substrate; depositing a first amorphous silicon layer on the substrate by physical vapor deposition; forming a first polycrystalline silicon layer by irradiating an electronic beam on the first amorphous silicon layer for large area crystallization process; depositing the second amorphous silicon layer over the first polycrystalline silicon layer; and forming a second polycrystalline silicon layer by irradiating the electronic beam on the second amorphous silicon layer; and irradiating electronic beam to the silicon layer at specific intervals to form a P-type silicon thin film, where electron beam has intensity of 2.5-5.0 keV and radio frequency power of 320 W. The first and the second polycrystalline silicon layers are formed at pressure of 3x 10-4 torr with process time of 25-200 seconds. The physical vapor deposition process is carried out at pressure of 1x 10-7 torr with deposition rate of 10 ~ Angstrom /s under argon gas. The P-type silicon thin film is formed with a thickness of 200 nm. An INDEPENDENT CLAIM is included for a solar cell manufactured by the method.