NOVELTY - A soda lime glass substrate is cleaned, magnetron-sputtered, and a metal film having thickness of 1-1.5 mm is deposited on the substrate in vacuum chamber having vacuum of 1x 10-3-1x 10-3 Pa by supplying argon having purity of 99.99% with deposition pressure control of 0.5-2.5 Pa, substrate temperature of 200-300 degrees C, and sputtering power of 100-200 W. Then, a copper indium sulfide absorption layer is formed on the surface of substrate by coating metal salt precursor solution, on substrate. Thus, formation of copper-indium-sulfur selenide thin film is carried out.    USE - Formation of copper-indium-sulfur selenide thin film used for solar cell.    ADVANTAGE - The method efficiently and economically provides copper-indium-sulfur selenide thin film under mild reaction conditions without contamination of impurities by consuming reduced amount of energy. The solar cell containing the film has high battery efficiency.    DETAILED DESCRIPTION - A soda lime glass substrate is cleaned, magnetron-sputtered, and a metal film having thickness of 1-1.5 mm is deposited on the substrate in vacuum chamber having vacuum of 1x 10-3-1x 10-3 Pa by supplying argon having purity of 99.99% with deposition pressure control of 0.5-2.5 Pa, substrate temperature of 200-300 degrees C, and sputtering power of 100-200 W. Then, a copper indium sulfide absorption layer is formed on the surface of substrate by coating metal salt precursor solution obtained by dissolving indium hydroxide, cuprous oxide and carbon disulfide in n-butylamine, filtering and adding filter cake to organic solvent solution on substrate. The molar ratio of cuprous oxide and indium hydroxide is 1:0.5-1:0.9. The ratio of content of indium hydroxide and butylamine is 1:0.8 mmol/mL to 1:1.5 mmol/mL. The ratio of content of indium hydroxide and carbon disulfide is 1:0.5 mmol/mL to 1:1 mmol/mL. The ratio of content of indium hydroxide and organic solvent is 1:0.8 mol/mL to 1:1 mmol/mL. The organic solvent is methanol, ethanol or chloroform. Then, copper-sulfur-indium hydroxide film is formed by coating composition comprising 0.5-0.9 mmol/mL cuprous oxide solution, n-butylamine, and indium hydroxide and carbon disulfide in molar volume ratio of 1:0.1 mmol/mL, on substrate. Then, copper-indium sulfide absorbent layer is formed on substrate by dispersing copper-indium sulfide nanocrystals metal precursor and obtaining a homogeneous precursor solution, then adding copper-indium sulfide nanocrystals and salt precursor solution, and then spin-coating obtained solution on the substrate to thickness of 1-1.5 mm. The formed layer is selenium-treated in a sealed glass tube furnace filled with argon gas, and heated at 450-550 degrees C for 45-70 minutes with speed of 10-20 degrees C/minute, to form copper-indium-selenium sulfide absorption layer having thickness of 2-3 mm. Then, a cadmium sulfide layer having thickness of 50-80 nm is formed on substrate by dissolving cadmium sulfate in deionized water and obtaining 0.2-0.4 mg/mL cadmium sulfate solution, adding aqueous ammonia to adjust pH of solution to 9-13, then adding thiourea and obtaining cadmium sulfate-thiourea mixed solution, coating obtained solution onto the substrate, heating at 60-820 degrees C for 10-20 minutes and forming copper-indium selenium sulfide absorbing layer having thickness of 60-100 nm on substrate. The mass ratio of thiourea and cadmium sulfate is 2:1-3:1. Then, an intrinsic high-resistive zinc oxide layer and indium tin oxide film obtained using indium-tin oxide target with tin oxide and indium oxide in mass ratio of 9:1 as target, at substrate temperature of room temperature, argon gas having purity of 99.99% as working gas, working pressure of 2-3 Pa and sputtering power of 50-125 With respect to The obtained composite is heated, to obtain copper-indium-sulfur selenide film having thickness of 100-200 nm.