NOVELTY - The method comprises: dipping a solar cell substrate in a plating solution to generate an electron pair in the substrate; passing an energy to change the conditions of the substrate to produce a power of the solar cell; electroplating a grid electrode of the solar cell formed on an electrode area on the solar cell substrate; changing an energy transmission frequency, an energy intensity and an energy transfer time of the electrode; and forming an insulator layer on the substrate and then patterning. The passing step comprises generating a self-power pulse in the solar cell.    USE - The method is useful for electroplating a grid electrode of a solar cell (claimed).    ADVANTAGE - The method is capable of rapidly and economically electroplating the grid electrode of the solar cell with improved plating rate and without the need of the seed metal, thus improving the quality of the grid electrode.    DETAILED DESCRIPTION - The method comprises: dipping a solar cell substrate in a plating solution to generate an electron pair in the substrate; passing an energy to change the conditions of the substrate to produce a power of the solar cell; electroplating a grid electrode of the solar cell formed on an electrode area on the solar cell substrate; changing an energy transmission frequency, an energy intensity and an energy transfer time of the electrode; and forming an insulator layer on the substrate and then patterning. The passing step comprises generating a self-power pulse in the solar cell by controlling on/off period of the energy. The electroplating step is performed using electron beam lithography process, laser lithography process, screen printing process, photolithography process, or imprint lithography process. The grid electrode has a width that is smaller than that of the solar cell, and a height that is larger than that of the solar cell according to a depth of a pattern of the patterned insulation layer. The method further comprises forming a conductive layer having an ohmic contact between the grid electrode and the substrate, depositing a metal layer on the patterned insulation layer using a lift-off process, plating a sacrificial metal on a positive side of the grid electrode, measuring a current value of the grid electrode, adjusting the current to maintain an electrolytic level of the grid electrode by controlling a concentration of the plating solution, measuring a temperature of the plating solution, and performing ion implantation on the grid electrode and then heat-treating. The grid electrode includes a single PN junction formed on a back surface of the substrate.