NOVELTY - The device (210) has first and second electrodes (220a, 220b) extending between first and second sides (213, 215) of a substrate (212). An interconnect (219a, 219b) is fixed on the first side. The first electrode includes a first contact pad (216a) on a source/drain region (226) and a via (222a) extending through the substrate. The via connects the first contact pad with the interconnect. The second electrode includes a second contact pad (216b) on the substrate and a conductive feature (225) in the substrate. The conductive feature connects the second contact pad with the interconnect.    USE - Semiconductor device i.e. transistor device such as power transistor (all claimed) i.e. solid-state power transistor, and FET e.g. metal oxide semiconductor (MOS) transistor and high electron mobility transistor (HEMT), for use in an electronic device such as desktop computers, laptop computers, Internet appliances, hand-held devices e.g. palm-top computers, wearable computers, cellular or mobile phones, personal digital assistants, music players, tablets, multi-processor systems, processor-based or programmable consumer electronics, network computers, minicomputers, power supplies, electric cars and solar cells. Can also be used for a logic device, a memory device and a diode.    ADVANTAGE - The device ensures that size of a gap, size of a first conductive plate and/or size of the first interconnect can be selected based on magnitude of operating current of the semiconductor device so as to prevent electro migration of conductive materials. The device can determine thickness of interconnect material, so that a second conductive plate and a second interconnect can carry large electrical current during operation and/or provide a mechanical support to the semiconductor device during manufacturing.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional side view of a semiconductor device.    Semiconductor device (210)    Substrate (212)    Sides of substrate (213, 215)    Contact pads (216a, 216b)    Interconnect (219a, 219b)    Electrodes (220a, 220b)    Via (222a)    Conductive feature (225)    Source/drain region (226)