NOVELTY - The method comprises: providing a gas-sensitive solid metal oxide exhibiting a shift in electrical parameters upon exposure to a target gas; combining a solid gas sense-enhancing metal source with the solid metal oxide; pulverizing the solid metal oxide with the solid metal gas sense-enhancing metal source to form a dry agglomerated gas-sensitive particulate material (514) comprising a solid dispersion of the solid gas sense-enhancing metal source with the solid metal oxide; and combining the dry agglomerated gas-sensitive particulate material with a solvent.    USE - The method is useful for forming a gas sensor structure on a surface of an integrated circuit (all claimed), where the sensor is useful for detecting or sensing presence and/or concentration of gases including carbon monoxide, methane, hydrogen or volatile organic compounds in a given gas mixture.    ADVANTAGE - The gas sensor rapidly detects or senses the presence and/or concentration of gases in the given gas mixture with high sensitivity.    DETAILED DESCRIPTION - The method comprises: providing a gas-sensitive solid metal oxide exhibiting a shift in electrical parameters upon exposure to a target gas; combining a solid gas sense-enhancing metal source with the solid metal oxide; pulverizing the solid metal oxide with the solid metal gas sense-enhancing metal source to form a dry agglomerated gas-sensitive particulate material (514) comprising a solid dispersion of the solid gas sense-enhancing metal source with the solid metal oxide; combining the dry agglomerated gas-sensitive particulate material with a solvent to form the gas-sensitive material formulation including the agglomerated gas sensitive particulate material; and depositing the gas sensitive material formulation on the surface to form the gas sensor structure of the gas-sensitive material. The solid gas sense enhancing metal source comprises a metal salt. The method further comprises: exposing the dry agglomerated gas-sensitive particulate material or the deposited gas sensitive material formulation to a temperature effective to decompose the metal salt to its corresponding gas sense-enhancing metal; forming the gas sensitive material formulation for deposition on surface of an integrated circuit (500) by combining the dry agglomerated gas-sensitive particulate material with a binder material and a solvent effective for dissolving the binder; exposing the deposited gas sensitive material formulation to a first temperature above the boiling point of the solvent effective to evaporate the solvent from the deposited gas sensitive material formulation; exposing the deposited gas sensitive material formulation to a second temperature of less than or equal to 400 degrees C effective to burn-out the binder and form the gas sensor structure from the remaining gas sensitive material; forming the gas sensor structure without exceeding a temperature of 300 degrees C; depositing the gas sensitive material formulation on the surface of the integrated circuit to form the gas sensor structure as part of an integrated gas sensor system that includes the integrated gas sensor structure; and depositing the gas sensitive material formulation on the surface of integrated circuit to form the gas sensor structure as part of an integrated gas sensor system that includes an integrated gas sensor structure. The gas-sensitive solid metal oxide comprises a single phase n-type metal oxide. The binder material has a burn-out temperature of less than or equal to 400 degrees C. The solvent has an evaporation temperature that is less than the burn-out temperature of the binder material. The gas sensitive particulate material, binder and solvent are combined at a temperature, which is below the burn-out temperature of the binder and at a temperature, which is below the boiling point of the solvent. The second temperature is higher than the first temperature. The integrated circuit comprises an insulative layer (508) that is incompatible with temperatures of greater than or equal to 450 degrees C. The gas sensitive material formulation comprises platinized metal oxide.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross sectional view of an integrated circuit.    Integrated circuit (500)    Passivation layer (506)    Insulative layer (508)    Conductive layer (510)    Gas-sensitive particulate material. (514)