TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Processes: Indium oxide is patterned by attaching mask to indium oxide layer, applying photoresist, etching indium oxide layer, and cleaning etched indium oxide layer. Photoresist is applied by airbrush at airbrush pressure of 10-40 psi. Indium oxide layer is etched using a composition of 20% hydrochloric acid (HCl) and 7% nitric acid (HNO3) at 90-130 degrees C. Cleaned indium oxide layer is annealed at 145 degrees C for 4 minutes and cleaned. Sol gel zinc oxide precursor solution is prepared by dissolving zinc acetate in a mixture of 2-methoxyethanol and ethanolamine or methoxyethoxyacetic acid. Sol gel zinc oxide precursor solution is stirred and heated at 60 degrees C for 1 hour before spraying. Indium oxide layer is covered with a mask to tape before spraying with sol gel zinc oxide precursor solution. Sol gel zinc oxide precursor solution is sprayed at a distance of 8-14 cm from substrate surface, where the airbrush is set to pressure of 20 psi using an inert gas and volumetric flow rate of the solution of 0.05-0.2 ml/minute. Zinc oxide layer is annealed by heating to 275 degrees C and cooling for 30 minutes. Zinc oxide layer is washed and dried with inert gas.    TECHNOLOGY FOCUS - POLYMERS - Preferred Processes: Bulk heterojunction composition is prepared by dissolving poly(3-hexylthiophene) in dichlorobenzene, dissolving phenyl-C60-butyric acid-methyl ester in dichlorobenzene, stirring dissolved poly(3-hexylthiophene) overnight at 60 degrees C, stirring dissolved phenyl-C60-butyric acid-methyl ester overnight at 60 degrees C, and mixing dissolved poly(3-hexylthiophene) and dissolved phenyl-C60-butyric acid-methyl ester together at a 1:1 volume ratio for greater than or equal to 1 hour. Active layer is sprayed by fixing a mask to substrate, heating substrate to 90 degrees C, and spraying heterojunction composition. Active layer is sprayed at a distance of 8-14 cm from substrate surface, where the airbrush is set to pressure of 20 psi using inert gas and volumetric flow rate of the solution of 0.4-0.9 ml/minute. Layer containing poly(3,4)-ethylenedioxythiophene:poly-styrenesulfonate mixed with 5 vol.% dimethylsulfoxide is prepared by filtering poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), adding dimethylsulfoxide to 5 vol.%, and subjecting solution to sonic energy for 1 hour before spraying. A mask is fixed to the substrate before spraying layer containing poly(3,4)-ethylenedioxythiophene:poly-styrenesulfonate mixed with 5 vol.% dimethylsulfoxide at a distance of 3-7 cm from substrate surface, where the airbrush is set to pressure of 20 psi using inert gas and volumetric flow rate of the solution of 0.05-0.1 ml/minute. The device is annealed by heating to 150 degrees C and cooling to room temperature. The device is prepared without wiping the device after spray application of a layer. Preferred Conditions: High vacuum is 10-6 Torr.