NOVELTY - Forming graphite based structure (106 1) on substrate comprising many zones, where first zone comprises first many subzones and graphite based structure comprises first graphene layer comprising first many graphene sublayers (106 1 i, 106 1 j, 106 1 k, 106 1 h) that collectively defines first predetermined cross sectional graphene profile, comprises: doping first zone with carbon in accordance with first many dopant profiles, where each respective dopant profile has doping for corresponding subzone; and generating first graphene sublayers having different dimensions by heating substrate.    USE - The process is useful for forming graphite based structure on a substrate, where the graphite based structures include diodes, transistors, LEDs, solar cells and/or photodetectors or other devices and the graphite based structure is useful in electronic devices, composite material and energy generation and storage.    ADVANTAGE - The process: provides fabrication of graphite based devices with a profile, preferably in nanoscale range and graphite based devices formed without any requirement for patterning graphene; provides graphene devices with desired size, specified geometries and electronic/photonic properties; provides fabrication of graphene devices in various configurations with any number of graphene layers, where wide variety of configurations provides for ability to generate a wide array of devices, include devices in which graphene sublayer of graphene layer performs one function while another graphene sublayer performs another function, and provides wide variety of graphene devices without any requirement to post process graphene; provides more versatile and efficient devices (solar devices), integration of broadband devices (extreme UV through IR), increased efficiency by the design of elements to capture maximum peak wavelength energy, generation of neighboring effects of different functionality of graphene (single and multiple layers), reduced resistivity by using more sheets, band gap tune ability, work function definition, denser packing of device, shorter mean free paths, better capture of photons, cascade devices (stair case devices) where photons or wavelengths are stripped from top to bottom, optical properties and electrical interactions (e.g. sensing and response to specific wavelength at each level); provides fabrication of graphene devices or structures having multiple functionalities with characteristic dimensions in nanometers e.g. graphene quantum dots, graphene nanoribbons, graphene nanonetworks, graphene plasmonics or graphene super lattices; generates graphene in desired topography through the control of dopant profiles or other physical, chemical, processing parameters instead of patterning; and provides nanoscale graphene structures or devices with ease, precision and consistency.    DETAILED DESCRIPTION - Forming graphite based structure (106 1) on a substrate comprising many zones, where first zone in many zones comprises first many subzones, and the graphite based structure comprises first graphene layer comprising first many graphene sublayers (106 1 i, 106 1 j, 106 1 k, 106 1 h) that collectively defines first predetermined cross sectional graphene profile, overlying the first zone of substrate, comprises: doping the first zone with carbon in accordance with first many dopant profiles, where each respective dopant profile has doping for corresponding subzone, where at least one dopant profile is different than another dopant profile; and generating first many graphene sublayers on the substrate by heating the substrate, where the graphene sublayer has dimension that is different than another graphene sublayer in the first many graphene sublayers. INDEPENDENT CLAIMS are also included for the graphite based structure, comprising either the substrate comprising at least one zone and at least one graphene layer, each respective graphene layer in the graphene layers overlaying a corresponding zone in the by the process as above per se, or the substrate comprising at least one zone, each zone has a surface, where the surface of a first zone in the zones comprises a first subsurface and an adjacent second subsurface and graphene layers, each respective graphene layer in the graphene layers formed on the surface of a corresponding zone in the zones, where a first graphene layer is formed on the surface of the first zone in the zones, the first graphene layer comprises many graphene sublayers that collectively defines a first predetermined cross sectional profile, where a first graphene sublayer in the first many graphene sublayers is formed on the first subsurface of the surface of the first zone, a second graphene sublayer in the first many graphene sublayers comprises a first portion formed on a top surface of the first graphene sublayer, a second portion formed on the second subsurface of the surface of the first zone and a first intermediate portion connecting the first portion and the second portion of the second graphene sublayer, and the first and second graphene sublayers have different characteristic dimensions and hence different bandgaps.    DESCRIPTION OF DRAWING(S) - The figure provides detailed graphical representation of method for forming graphene devices with profile on substrate.    Enlarged zone (102 1)    Generated graphene layer (106 1)    Graphene sublayers (106 1 i, 106 1 j, 106 1 k, 106 1 h)