NOVELTY - The method involves depositing a doped epitaxial layer over a patterned dielectric (206) such that crystalline growth occurs in portions of an epitaxial layer in contact with a substrate, and non-crystalline growth occurs in other portions of the epitaxial layer in contact with the dielectric. A set of metal contacts is formed (212) over local spacings of the dielectric. Another set of metal contacts is formed (214) over remote spacings. Exposed portions of the non-crystalline growth are etched (216) using the contacts as an etch mask to form interdigitated emitter and back contact stacks.    USE - Method for forming a photovoltaic device of field-effect inter-digitated back contact solar cells or panels providing power to electronic devices, homes, buildings and vehicles and integrated circuit chips of end products e.g. toys, energy collectors, solar devices and computer products. Can also be used in a light sensitive device, calculator and a solar powered light.    ADVANTAGE - The method enables providing a low temperature epitaxial layer that provides high quality low temperature processing and inter-digitated contact structures, which increase efficiency of the photovoltaic device. The method enables improving epitaxial silicon quality by increasing hydrogen dilution. The method allows conductive material to improve reflection of light from a back surface and prevent reaction of metal contacts with doped amorphous or epitaxial layers. The method enables etching the exposed portions of the non-crystalline growth using the contacts as the etch mask to form the interdigitated emitter and back contact stacks, thus reducing complexity of fabrication and manufacturing cost of the photovoltaic device.    DETAILED DESCRIPTION - The doped epitaxial layer is deposited at temperature between 150 and 250 degree celsius with gas ratio of hydrogen to silicon tetrahydride that is greater than 5 for silicon growth or gas flow ratio of hydrogen to a sum of silicon tetrahydride and germanium tetrahydride that is greater than 5 for silicon germanium growth.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for forming a photovoltaic device of field-effect inter-digitated back contact solar cells    Step for depositing doped epitaxial layer over patterned dielectric (206)    Step for forming transparent conductive material (210)    Step for forming set of metal contacts over local spacings of dielectric (212)    Step for forming another set of metal contacts over remote spacings (214)    Step for etching exposed portions of non-crystalline growth (216)