NOVELTY - Fabrication of thin-film solar cell involves depositing an insulating barrier layer on a metallic substrate by hot wire chemical vapor deposition method, depositing a thin silver metal layer on the insulating barrier layer, depositing aluminum-doped zinc oxide layer, depositing n-type hydrogenated amorphous silicon-containing layer by hot wire chemical vapor deposition method using silane and phosphine, and depositing p-type hydrogenated amorphous silicon-containing layer by hot wire chemical vapor deposition method.    USE - Fabrication of thin-film solar cell (claimed) used for generation of direct current.    ADVANTAGE - The method enables efficient fabrication of thin-film solar cell with high photoelectric conversion efficiency, by simple and economical process.    DETAILED DESCRIPTION - Fabrication of thin-film solar cell involves depositing an insulating barrier layer on a metallic substrate by hot wire chemical vapor deposition method, subjecting metallic substrate to a temperature of 200-3000 degrees C and a filament temperature of 1700-19000 degrees C in the presence of silane, ammonia and nitrogen gases at flow rate of 1-5 sccm, 10-25 sccm and 10-30 sccm respectively, depositing a thin silver metal layer on the insulating barrier layer, depositing aluminum-doped zinc oxide layer, depositing n-type hydrogenated amorphous silicon-containing layer by hot wire chemical vapor deposition method using silane and phosphine at a flow rate of 6 sccm and 3 sccm respectively for 80 seconds, depositing p-type hydrogenated amorphous silicon-containing layer by hot wire chemical vapor deposition method using silane and diborane at a flow rate of 6 sccm and 3 sccm respectively for 45 seconds, depositing an intrinsic layer of hydrogenated amorphous silicon between n-type and p-type hydrogenated amorphous silicon-containing layers by hot wire chemical vapor deposition method using silane at a flow rate of 620 sccm for 10-15 minutes, and depositing a top transparent conducting layer on n-i-p junction.