NOVELTY - The method involves making a semiconductor layer i.e. n plus type gallium nitride layer (13), having a crystal structure of a hexagonal system on a silicon substrate (11). A stripe-form seed is formed by etching the layer on stripe form until the substrate is etched. A surface of the substrate is processed after forming the seed such that the semiconductor layer does not grow in a substantial manner. Horizontal direction growth of another semiconductor layer i.e. p-type gallium nitride layer (16), with the crystal structure of the hexagonal system from the seed is carried out.    USE - Method for manufacturing a gallium nitride type semiconductor element e.g. high voltage-resistant high output semiconductor electronic device such as transistor and diode e.g. gallium nitride type schottky barrier diode and gallium nitride type LED, semiconductor light-emitting device such as semiconductor laser, and semiconductor light receiving element (all claimed). Can also be used as a latch-up field stop (FS) insulated gate bipolar transistor (IGBT) super-junction (SJ) vertical gallium nitride type MOSFET and a non latch-up gallium nitride IGBT type MOSFET.    ADVANTAGE - The method enables manufacturing a high voltage-resistant high output semiconductor electronic device, a semiconductor light-emitting device, a high voltage-resistant high output insulated gate FET and a semiconductor light receiving element/solar cell in an easy manner using the silicon substrate at low cost.    DETAILED DESCRIPTION - The horizontal direction growth is an epitaxial lateral overgrowth. INDEPENDENT CLAIMS are also included for the following:    (1) a method for manufacturing an insulated gate FET    (2) a method for manufacturing a semiconductor light-emitting device    (3) a method for manufacturing a solar cell    (4) an insulated gate FET.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a gallium nitride-type MOSFET.    Silicon substrate (11)    N plus type gallium nitride layer (13)    P-type gallium nitride layer (16)    N-type gallium nitride layer (17)    N plus type gallium nitride contact layer (18)