TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The substrate is made of a material comprising silicon dioxide, silicon, zinc oxide, permalloy, indium tin oxide, high permittivity oxides, transition metal oxides, rare earth element oxides, or aluminum oxide. The second solution comprises the solvent.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The first rate of temperature change is less than 300 degrees C/second, preferably 10-50 degrees C/second. The first time interval is less than 30 minutes, preferably less than 1 second. The first RTP process is carried out within a chamber. The self-assembling step executes emptying the chamber and introducing inert gas. The process comprises distributing a second solution containing at least one random copolymer onto the substrate to at least partially coat the surface of the substrate to get a second intermediate product, neutralization of the surface of the substrate through a second RTP process. The second RTP process comprises: heating the second intermediate product up to a second target temperature of a glass transition temperature Tg of the random copolymer to an order-disorder transition temperature of the random copolymer, through a second temperature rising ramp having a second rate of temperature change of greater than 5 degrees C/second, preferably 10-50 degrees C/second; maintaining the second intermediate product at the second target temperature for a second time interval of less than 60 minutes, preferably less than 1 minute, where the random copolymer is chemically bonded to the surface of the substrate so that the surface of the substrate is neutralized; and cooling the substrate with the neutralized surface to the ambient temperature through a second temperature descending ramp. The neutralization step further comprises making a low-power sonication of the substrate with the neutralized surface by heating the substrate with the neutralized surface in an ultrasonic bath in at least one solvent comprising toluene, acetone, tetrahydrofuran, chloroform, dichloromethane, benzene, methyl ethyl ketone, chlorobenzene, xylene, cyclohexanone and formic acid. The second RTP process is carried out in a chamber and the neutralization step executes emptying the chamber and introducing inert gas. The process comprises chemically cleaning the surface of the substrate to remove contaminants and/or particulate possibly present onto the surface of the substrate. Preferred Components: The block copolymer comprises polystyrene-poly fluorostyrene (PS-PFS), polystyrene-poly(dimethylsiloxane) (PS-PDMS), polystyrene poly(ethylene oxide) (PS-PEO), polystyrene-poly(methylstyrene) (PS-PMS), polystyrene-poly(4-vinylpyridine) (PS-P4VP), polystyrene-poly(2-vinylpyridine) (PS-P2VP), polystyrene-polylactide (PS-PLA), polystyrene-polyimide (PS-PI), polystyrene-poly(ethylene-propylene) (PS-PEP), polyimide-poly(4-vinylpyridine) (PI-P4VP), polyimide-poly(2-vinylpyridine) (PI-P2VP), polystyrene-poly(acrylic acid) (PS-PAA), polystyrene-poly(butadiene) (PS-PBD), polystyrene-poly(vinylpyridine) (PS-PVP), poly(ethylene-propylene)-poly(ethylethylene) (PEP-PEE), poly(ethylene oxide)-polystyrene (PEO-PS), poly(meth)acrylate based copolymers, polydiene based copolymers, polyisobutylene based copolymers, polystyrene based copolymers, polyvinyl naphthalene based copolymers, polyvinylpyridine based copolymers, polypropylene oxide based copolymers, polysiloxane based copolymers, adipic anhydride based copolymers, polyolefin based copolymers, polylactide based copolymers, polyferrocenyl dimethylsilane based copolymers or polyhedral oligomeric silsesquioxane based copolymers. The random copolymer comprises PS-PFS, PS-PDMS, PS-PEO, PS-PMS, PS-P4VP, PS-P2VP, PS-PLA, PS-PI, PS-PEP, PI-P4VP, PI-P2VP, PS-PAA, PS-PBD, PS-PVP, PEP-PEE or PEO-PS.