NOVELTY - The method involves supplying a copper precursor on a substrate, which is mounted within a vacuum chamber to evaporate chemistry deposition (CVD). An indium-selenium thin film is formed with mixture of a selenium precursor and an indium precursor. A copper indium gallium selenide thin film is evaporated with the CVD. The deposited copper indium gallium selenide thin film is heat-treated with a substrate. The indium precursor is selected from methyl, ethyl, butyl, tertial-butyl, iso-butyl, sec- butyl, methoxy, ethoxy, propoxy, iso-propoxy, butoxy, T-butoxy, iso-butoxy and sec-butoxy.    USE - Copper indium gallium selenide thin film solar cell manufacturing method.    ADVANTAGE - The method enables minimizing formation of a molybdenum selenium thin film layer, reducing problem generation in a copper indium gallium selenide solar cell fabricating process and solving generation of problem of the serial resistance increase by the molybdenum selenium thin film layer so as to improve efficiency of the copper indium gallium selenide thin film solar cell.    DETAILED DESCRIPTION - The copper precursor is selected from biscopper, bis-2,2,6,6-methylheptanedionato-coppers-package, bis-hexafluoroacetylacetonato- copper, vinyltrimethylsilyl-hexafluoroacetylacetonato-copper, vinyltrimethyl silyl-acetylacetonato-copper, vinyltrimethyl silyl-2,2,6,6-methylheptanedionato-copperpackage, vinyl tri ethylsilyl-acetylacetonato-copper, vinyl tri ethylsilyl-2,2,6,6- methylheptanedionato-copper package and vinyl tri ethylsilyl-hexafluoroacetylacetonato copper. The indium precursor is selected from trimethylindium, triethylindium, triisopropyl indium, tributyl indium, tri tertial-butyl indium, trimethoxy indium, triethoxy indium, tri-isopropoxy indium, dimethyl isopropoxy indium, diethyl isopropoxy indium, dimethylethyl indium, diethylmethyl indium, dimethyl isopropyl indium, diethyl isopropyl indium and dimethyl tertial-butyl indium. The selenium precursor is selected fromhydrogen, methyl, ethyl, profile, isopropyl, butyl, tertial-butyl and sec-butyl, dimethyl selenide, diethyl selenide, diisopropyl selenide, di tertial-butyl selenide, dimethyl diselenide, diethyldi selenide, diisopropyl diselenide, di tertial-butyl diselenide, tertial-butyl isopropyl selenide and tertial-butyl selenol.    DESCRIPTION OF DRAWING(S) - The drawing shows a process flow diagram illustrating a copper indium gallium selenide thin film solar cell manufacturing method.'(Drawing includes non-English language text)'