TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The silver(I) containing materials are selected from silver acetate, silver acetoacetate, silver acetylacetonate, silver bromide, silver carbonate, silver chloride, silver fluoride, silver hexafluoroarsenate, silver hexafluorophosphate, silver iodide, silver nitrate, silver phosphate, silver sulfate, silver tetrafluoroborate, silver trifluoroacetate, silver trifluoromethanesulfonate, silver salts of organic carboxylic acids (carboxylate salts), silver salts of organic phosphonic acids (phosphonate salts), silver salts of organic sulfonic acids (sulfonate salts), silver salts of bis(alkylsulfonyl)imides, silver salts of bis(trifluoroalkylsulfonyl)imides and/or silver(I) molecular complexes (preferably silver bis(trifluoromethanesulfonyl)imide (AgTFSI)). The first p-type organic semiconductor is selected from molecular (collection of discrete molecules, chemically identical or different), and/or oligomeric, polymeric materials (preferably 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD)); and has a structure selected from amorphous, crystalline and/or semi-crystalline. The sensitized n-type semiconductor is selected from titanium oxide (TiO2), aluminum oxide (Al2O3), tin oxide (SnO2), magnesium oxide (MgO), tungsten oxide (WO3), niobium oxide (Nb2O5) and/or zinc oxide (ZnO), and their doped variations of the oxides. Preferred Material: The ssHTM further comprises first p-type organic semiconductor doped with an ionic dopant selected from lithium (Li+), sodium (Na+) and/or potassium (K+). Preferred Method: The step of mixing the first p-type organic semiconductor with the silver(I) containing material additionally includes mixing with an ionic dopant selected from lithium (Li+), sodium (Na+), and potassium (K+); and, where the ssHTM additionally comprises a first p-type organic semiconductor doped with the ionic dopant. Preferred Cell: The sensitized n-type semiconductor has a form selected from nanoparticles, nanotubes, nanorods and/or nanowires; and has a thickness of 0.1 to 20 microns. The sensitized n-type semiconductor includes a sensitizer selected from molecular (organic) materials, metal-organic complexes, ruthenium-pyridyl complexes, porphyrins, metalloporphyrins, phthalocyanines, metallophthalocyanines, squaraines, indolenes, coumarins, thiophene and fluorene-based materials, monomeric oligomeric, polymeric photosensitizers, quantum dots, inorganic materials and/or organic-inorganic materials. The ssDSC further comprises blocking layer interposed between the TCO and the dye-sensitized n-type semiconductor. The percentage of chemically oxidized first p-type organic semiconductor to neutral charge first p-type organic semiconductor is 0.1 to 25%.