NOVELTY - The apparatus has a directional solidification crucible (210) which is provided with a bottom. A cooling platform (216) is provided with a first surface (220) defining an orifice (222) configured to receive a bottom portion (214) of the directional solidification crucible. A cooling duct (218) is configured to provide a portion of forced air to the bottom portion of the crucible. The side walls of the crucible are provided with a hot face refractory. The bottom portion of the crucible includes several heat transfer fins configured to dissipate heat.    USE - Apparatus for directional solidification of silicon for making silicon crystal used in solar cell. Can also be used in making silicon feedstock.    ADVANTAGE - Since the directional crystallization proceeds approximately from bottom to top with more homogenous horizontal thermal field in the silicon, the desired temperature gradient has a lower temperature at the bottom and a higher temperature at the top so that the high degrees of control over the temperature gradient and the corresponding directional crystallization can allow a more effective directional solidification and better segregation. Hence, the highly controlled directional solidification improves the purity of silicon with the improved heat dissipation at the reduced production cost. Since the lip can extend inward only enough to cover the bottom edge of the outer jacket of the top heater, the screen boxes enclose ends of the heating portions that protrude from the outer jacket of the top heater. Hence, the users are protected from the heat and electricity that can be present in and near the ends of these portions. The last silicon liquid is removed to another container from the directional solidification crucible during the saturation of solidification of liquid with impurities by segregation and then the second silicon can be easily removed from the crucible or mould after solidification. Hence, the quality of the ingot can be improved. The induction heating can cause mixing of the molten silicon so that the power can be adjusted sufficiently to optimize the amount of mixing, as too much mixing can improve segregation of impurities. The nature and intensity of stirring should not create hydrodynamic instability in the silicon liquid and destabilize the front of solidification.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for directional solidification.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the apparatus for directional solidification of silicon.    Directional solidification crucible (210)    Bottom portion (214)    Cooling platform (216)    Cooling duct (218)    First surface (220)    Orifice (222)