NOVELTY - The cell (100) has polysilicon layers placed on a back side of a silicon substrate (110). A first metal grid (190) is placed over one of the polysilicon layers. The first metal grid is electrically connected to a region of doped polysilicon through a contact hole of a dielectric layer (162). The dielectric layer is provided between the first metal grid and the polysilicon layer. A second metal grid (192) is electrically connected to another region of doped polysilicon, where the first and second metal grids are formed on a back side (104) of the cell.    USE - Back-contact solar cell for converting solar radiation to electrical energy.    ADVANTAGE - The cell is provided with a base and emitter diffusion regions formed on the back side such that the emitter diffusion region can collect minority charge carriers in the cell while the base diffusion region collects majority charge carriers, and the base diffusion region can be a continuous region separating the emitter diffusion regions, so that each of the emitter diffusion regions can be separated from the continuous base diffusion region by a spacer region extending from an edge of the emitter diffusion regions, and the spacer region can be a highly resistive region, which reduces space charge recombination losses at a junction of base and emitter diffusion regions, thus increasing cell efficiency. The cell uses industrial printing techniques e.g. screen printing, ink jet, or aerosol, to deposit components of a metal seed layer for improved manufacturing cost. The cell is provided with a front side diffusion region that improves quality of passivation of a front side and improves conversion efficiency of the cell. The cell functions when a potential difference is created between n- and p-type diffusion regions, thus enhancing potential difference between the diffusion regions, and hence increasing resistance in the silicon substrate between the diffusion regions.    DETAILED DESCRIPTION - The silicon substrate is an N-type silicon substrate. The former region of doped polysilicon includes N-type polysilicon. The latter region of doped polysilicon includes P-type polysilicon.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure illustrating a process for creating a back-contact solar cell having a silicon wafer with oxygen-implanted regions.    Back-contact solar cell (100)    Back side of cell (104)    Silicon substrate (110)    Dielectric layer (162)    Metal grids (190, 192)