NOVELTY - The method comprises: forming a thin dielectric layer (370) on a surface of a silicon substrate (304); forming a polysilicon layer over the thin dielectric layer; depositing an etch-resistant dopant material comprising a dopant source material on the polysilicon layer in a liquid phase; forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material and a solvent to UV light; and heating the polysilicon layer and the etch-resistant dopant material to cause the dopant source to diffuse into the polysilicon layer.    USE - The method is useful for manufacturing solar cells (claimed) such as thin silicon solar cells and back-contact back-junction solar cells.    ADVANTAGE - The method is capable of economically manufacturing the solar cells.    DETAILED DESCRIPTION - The method comprises: forming a thin dielectric layer (370) on a surface of a silicon substrate (304); forming a polysilicon layer over the thin dielectric layer; depositing an etch-resistant dopant material comprising a dopant source material on the polysilicon layer in a liquid phase; forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material and a solvent to UV light through a photo-polymerization process; and heating the polysilicon layer and the etch-resistant dopant material at 400 degrees C to cause the dopant source to diffuse into the polysilicon layer. The method further comprises etching the polysilicon layer using the etch-resistant dopant material as an etchmask, and removing the solvent from the etch-resistant dopant material without altering a structure of the cross-linked matrix. The depositing step comprises dispensing the etch-resistant dopant material in interdigitated contact fingers on the silicon substrate. The non-thermal cure and photo polymerization process cause a phase change of the etch-resistant dopant material from liquid to solid. The step of forming the cross-linked matrix in the etch-resistant dopant material comprises exposing the etch-resistant dopant material to non-infrared electromagnetic radiation, and transmitting acoustic waves toward the etch-resistant dopant material. The exposing step comprises exposing the etch-resistant dopant material, to UV light, from a visible spectrum or electromagnetic radiation having a wavelength of 8-400 nm. The dispensing step comprises screen printing, ink-jet printing or spin coating the etch-resistant dopant material onto the polysilicon layer. The dopant material includes a single-polarity dopant source or a positive type or negative type dopant source. The silicon substrate has a photovoltaic solar cell structure.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross sectional view of a solar cell.    Silicon substrate (304)    Dopant sources (320,322)    Diffusion regions (340,342)    Thin dielectric layer (370)    Exposed region. (410)