NOVELTY - The cell (400) has a p-type semiconductor absorber layer (405) placed on a surface of a metal back contact layer (403). An n-type semiconductor collector layer (407) is placed on a surface of the p-type semiconductor absorber layer not in contact with the metal back contact layer to form a p-n junction with voltage differential. A window layer (409) is placed on a surface of the n-type semiconductor collector layer opposite the p-n junction. An electrical contact includes an aluminum grid positioned on a surface of the window layer to receive electrons from the n-type collector layer.    USE - Thin film solar cell.    ADVANTAGE - The cell emits electrons from a metal surface at lower energies and readily combines with holes created by solar photons to produce electricity at lower energies when structure of metal reduces work function, thus improving efficiency of the cell when greater energy output is produced by a lower energy input, reducing natural resistance present between the metal back contact and semiconductor layers when current losses caused by delayed recombination of electrons and holes between the p-n junction and the back contact layer are minimized and increasing output current of the device in a quick manner. The semi conductor absorber layer is placed on the surface of the metal back contact layer to be modified with nano-scale indentations or protrusions such that the cell is readily manufactured using inexpensive materials, so that size of a band gap in a semiconductor is change or tuned, thus altering absorption properties of the cell, facilitating maximum possible solar electric energy conversion and extending sensitivity of the cell to include lower energy photons to optimize absorption of light based on specific local geographical requirements, while reducing reflection of photons by a carrier layer when replicated on a front surface in cost-effective and efficient manner.    DETAILED DESCRIPTION - The p-type semiconductor absorber layer is made of copper indium gallium diselenide.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a thin film solar cell.    Thin film solar cell (400)    Metal back contact layer (403)    P-type semiconductor absorber layer (405)    N-type semiconductor collector layer (407)    Window layer (409)