TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first layer comprises zinc stannate, the second layer comprises silica and aluminum oxide, the third layer comprises zinc stannate, and the fourth layer comprises silica. The second layer comprises silica in an amount of 70-95 wt.%, and aluminum oxide in an amount of 5-30 wt.%, in each case based on total weight of the third layer. The first layer has a thickness of 15-22 nm, the second layer has a thickness of 22-33 nm, the third layer has a thickness of 95-143 nm, and the fourth layer has a thickness of 75-115 nm. A ratio of thickness of the second layer to thickness of the first layer is 1:1-2:1, a ratio of thickness of the third layer to thickness of the first layer is 6:1-7:1, and a ratio of thickness of the fourth layer to thickness of the first layer is 4.5:1-5.5:1. The antireflective coating consists of the first layer, second layer, third layer and fourth layer. The antireflective coating is formed by sputtering vacuum deposition. The transparent conductive oxide coating comprises at least one layer, where each layer of the transparent conductive oxide coating comprises: at least one of an oxide, a nitride, a carbide, and an oxycarbide of silica; at least one of an oxide, a nitride, a carbide, and an oxycarbide of aluminum; at least one of an oxide, a nitride, a carbide, and an oxycarbide of zirconium; at least one of an oxide, a nitride, a carbide, and an oxycarbide of tin; and/or at least one of an oxide, a nitride, a carbide, and an oxycarbide of indium. The transparent conductive oxide coating comprises a first layer comprising at least one of indium tin oxide and tin oxide, and a second layer comprising tin oxide, where the first layer comprising at least one of indium tin oxide and tin oxide is interposed between the transparent substrate and second layer comprising tin oxide. The transparent conductive oxide coating is formed by chemical vapor deposition. The photovoltaic coating comprises a first layer comprising an n-type material, and a second layer comprising a p-type material, where the first layer comprising the n-type material is interposed between the transparent conductive oxide coating and second layer comprising the p-type material. The first layer comprising n-type material comprises cadmium sulfide, and the second layer comprising p-type material comprises cadmium telluride. The photovoltaic coating comprises at least one layer comprising silicon, preferably polycrystalline silicon. The transparent substrate comprises an organic polymer and/or inorganic glass. The photovoltaic cell further comprises: a back electrode positioned over the photovoltaic coating; and a back substrate positioned over the back electrode.