NOVELTY - The cell has a semiconductor structure fixed with a porous structure. Titanium dioxide nano-particle is included in a pore of the semiconductor structure. A composite comprises zinc oxide nano-particle. An upper electrode structure is fixed with a photo-electrode. An electrolyte is filled between a lower electrode structure and the upper electrode structure. A three dimensional (3D) nanostructure and the semiconductor structure are formed on the lower electrode structure through a physical vapor deposition unit. A dye layer is formed with the semiconductor structure.    USE - Dye sensitized solar cell for a sensor system.    ADVANTAGE - The cell is simple to manufacture so as to improve manufacturing compatibility, productivity and manufacture efficiency. The cell utilizes different material and dye so as to effectively perform inclination angle deposition process, electron-beam evaporation process, physical vapor deposition process and sputter deposition process. The cell accurately forms a desired pattern in desired portion by performing lithography process. The cell effectively controls deposition rate and rotating speed of the lower transparent electrode and inclination angle of a deposition material. The cell is freely formed with the 3D nanostructure with different form so as to effectively adsorb dye and scatter light and effectively control helix angle, helix diameter and helix line diameter, thus improving phosphor conversion efficiency and light scattering efficiency. The cell ensures that an electron is directly transferred through the nanostructure of a semiconductor so as to improve optical pumping electro-migration and reduce recombination of an electron-hole and the electron between the nano particles, thus preventing the lifetime of the electron from being degraded.    DETAILED DESCRIPTION - The lower electrode structure is formed with a light electrode layer and a substrate that is made of glass and metal. The electrode layer of the lower electrode structure is made of indium tin oxide, tin dioxide and fluorine doped tin oxide. The electrode layer of the upper electrode structure is made of indium tin oxide, tin dioxide, fluorine doped tin oxide and zinc oxide. The semiconductor structure is made of titanium oxide, zinc oxidate, tantal oxide, tin oxide, zirconium sulfide, niobium oxide barium titanate, cadmium oxide, ferric acid yttrium and titanate iron. Shape of the semiconductor structure is helix, ribbon, spring, cone and zigzag. The dye layer is made of ruthenium group dye and coumarin group dye. The electrolyte comprises acetonitrile, propionitrile, 1,2-dimethyl-3-propylimidazolium iodide and solid polymer electrolyte. An INDEPENDENT CLAIM is also included for a method for manufacturing a dye sensitized solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a dye sensitized solar cell.