NOVELTY - The element has an element unit formed with a virgin growth surface that is used for epitaxial growth of a growth layer, where the element is made of nitride and zinc oxide, flexed with radius of curvature less than 1 or 100 meters and thickness of the element is between 20-70 microns. The growth layer is provided with an indium gallium nitride/gallium nitride quantum well layer, a p-doped aluminum gallium nitride barrier layer, a p-doped gallium nitride layer and electrical contact layers (235, 237) that are contacted together to form a flexible semiconductor device.    USE - Epitaxial element such as n-type contact layer, flexible growth substrate and 30 micron thick freestanding n-type doped gallium nitride foil, for being formed into a flexible semiconductor device such as solar cell, multi-junction solar cell, RF device, power device, piezoelectric device, LED, laser diode, EELED, biomedical device and 3D semiconductor device (all claimed).    ADVANTAGE - The element has stress control feature so as to enhance light extraction, suppress unwanted optical modes and reduce dislocations during regrowth of the element. The virgin growth surface avoids the need for surface preparation before formation, growth, epitaxial growth, deposition of additional layers necessary to form the flexible semiconductor device, so that polishing, surface damage and variable miscut angle defects from the element can be eliminated. The element can be directly heated with actinic radiation, so that speed of mounting process can be maintained and uniformity of growth on the element can be enhanced. The element is formed with thick transparent conductive oxides so as to enhance structural integrity of the semiconductor device with improved handleability. The element improves epitaxial quality of additional semiconductor layer or layers so as to reduce processing time to grow the layer. The element has better ohmic contacts and better optical properties, and enhances extraction efficiency so as to realize high performance.    DETAILED DESCRIPTION - The growth layer is made of material that is selected from one of oxide, nitride, arsenide, silicon, antimonide, metal, dielectric, gallates, aluminates and carbides.    DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an epitaxial element with a reverse flip chip mounted LED.    LED contacts (234, 239)    Electrical contact layers (235, 237)    Bond pad (238)    Wavelength conversion layer (241)    Electrical connections (243)