TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The formed nanostructures are zinc oxide nanostructures. The source is optionally a gas depending on nature and material of the nanostructure such as carbon nanotube, zinc oxide, and cadmium sulfide. The hard material for the substrate is chosen from glass, and thick metal layer that do not tend to bend under force. Preferred Property: The nanostructure is in form of nanowires, nanorods, nanotubes, and nanocolloids, and morphological transformation of nanorods are in form of pencil-like, rods, tube shape, dot, needle-like, tree-like, ball, urchin-like or spherical.    TECHNOLOGY FOCUS - METALLURGY - Preferred Process: The process of electro-polishing aluminum substrate involves placing the substrate in mixture of 69-72% pure perchloric acid and 99-99.9% pure ethanol having ratio of 1:3-1:5 by volume, and applying potential of 10-20 V at less than 10 degrees C for 3-10 minutes depending on surface roughness. The mild anodization process involves selecting 0.1-0.5M phosphoric acid as electrolyte, applying potential of 160-195 V for 1-6 hours, and forming hexagonally arranged nanoporous alumina structures with one end blocked with barrier layer for 5-25 minutes. The hard anodization involves selecting 0.25-0.35M oxalic acid as electrolyte, applying potential of 35-40 V for 5-10 minutes, increasing potential gradually from 120 V to 150 V at low rate, maintaining potential at respective voltage for 5-10 minutes, and forming hexagonally arranged nanoporous structures with one end blocked with barrier layer. The seeding process for growth of nanostructures involves preparing seed solution, providing the solution on top surface of the alumina structure using spin coating, depositing nanoparticles on top surface of sand AAO structure, and annealing the alumina loaded with the seeds. The nanoparticles are deposited on top surface of the alumina structure by carrying out sputtering process, and spin coating process. The process of providing the substrate involves selecting substrate material from material that withstands high temperatures for the chemical vapor deposition (CVD) process for nanostructure growth, and flexible material or hard material for hydrothermal nanostructure growth process. The process of removal of aluminum involves chemically etching aluminum using 0.2-0.25M cupric chloride and 5.5-6.2M hydrochloric acid solution at 30-40 degrees C for predetermined time duration depending on thickness of aluminum to be etched. The chemical etching of aluminum uses optionally saturated mercuric chloride. The chemical etching of anodized aluminum oxide involves etching for 5-10 minutes in 2-3 wt.% chromic acid and 6-7 wt.% phosphoric acid at 65-80 degrees C. The process of barrier layer removal by chemical etching involves placing AAO in 5-6 wt.% phosphoric acid for 200-250 minutes at 32-33 degrees C. The process of hydrothermal growth involves preparing nutrient, providing assembly upside down in the nutrient such that the substrate is at top and the AAO pore side from where the barrier layer is removed, is brought in contact with the nutrient surface at preset time and temperature of the nutrient with respect to respective nanostructure nature, cleaning the grown nanostructures using deionized water, annealing the nanostructures at preset temperature depending on the substrate material temperature withstanding characteristics, and forming the AAO template enabled substantially uniform nanostructures. The chemical vapor deposition process for the growth of nanostructures involves selecting carrier gas from argon and nitrogen, selecting active gas from oxygen and carbon dioxide, and selecting source disposed in the CVD chamber is in form of powder or gas, depending on material of the seeds.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The flexible material for the substrate is chosen from polydimethylsiloxane (PDMS), rubber, polymer-based material, plastics and material that tend to bend under force and regain original shape.