TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The substrate is insulating material, metallic material, carbon material and/or composite material of conductor and dielectric film. The oxide semiconductor precursor is zinc oxide precursor, indium oxide precursor, tin oxide precursor, gallium oxide precursor, tungsten oxide precursor, aluminum oxide precursor, titanium oxide precursor, vanadium oxide precursor, molybdenum oxide precursor, copper oxide precursor, nickel oxide precursor, iron oxide precursor, chromium oxide precursor and/or bismuth oxide precursor. The zinc oxide precursor is zinc hydroxide, zinc acetate, zinc acetate hydrate (Zn(CH3(COO)2.nH2O)), diethyl zinc, zinc nitrate, zinc nitrate hydrate (Zn(NO3)2.nH2O), zinc carbonate, zinc acetylacetonate, and/or zinc acetylacetonate hydrate (Zn(CH3COCHCOCH3)2.nH2O). The indium oxide precursor is indium nitrate hydrate (In(NO3)3.nH2O), indium acetate, indium acetate hydrate (In(CH3(COO)2).nH2O), indium chloride (InCl, InCl2 and InCl3), indium nitrate, indium nitrate hydrate (In(NO3)3.nH2O), indium acetylacetonate and indium acetylacetonate hydrate (In(CH3COCHCOCH3)2.nH2O). The tin oxide precursor is chosen from tin acetate, tin acetate hydrate (Sn(CH3(COO)2.nH2O)), tin chloride (SnCl2, SnCl4), tin chloride hydrate (SnCln.nH2O), tin acetylacetonate, and/or tin acetylacetonate hydrate (Sn(CH3COCHCOCH3)2.nH2O). The gallium oxide precursor is gallium nitrate, gallium nitrate hydrate (Ga(NO3)3.nH2O), gallium acetylacetonate, gallium acetylacetonate hydrate (Ga(CH3COCHCOCH3)3.nH2O), and/or gallium chloride (Ga2Cl4, GaCl3). The tungsten oxide precursor is tungsten carbide, tungstate powder, tungsten chloride (WCl4, WCl6), tungsten isopropoxide, sodium tungstate, sodium tungstate hydrate (Na2WO4.nH2O), ammonium tungstate, ammonium tungstate hydrate ((NH4)6H2W12O40.nH2O) and/or tungsten ethoxide. The aluminum oxide precursor is aluminum chloride, aluminum nitrate, aluminum nitrate hydrate (Al(NO3)3.nH2O), and/or aluminum butoxide. The titanium oxide precursor is titanium-isopropoxide, titanium chloride, titanium ethoxide and/or titanium butoxide. The vanadium oxide precursor is vanadium isopropoxide, ammonium vanadate and/or vanadium hydrate (V(CH3COCHCOCH3)3.nH2O). The molybdenum precursor is molybdenum isopropoxide, chloridated molybdenum isopropoxide, ammonium molybdate, and/or hydrated ammonium molybdate ((NH4)2MoO4.nH2O). The cupric oxide precursor is cupric chloride (CuCl, CuCl2), cupric chloride hydrate (CuCl2.nH2O), copper acetate, copper acetate hydrate (Cu(CO2CH3)2.nH2O), copper acetylacetonate, copper nitrate, copper nitrate hydrate (Cu(NO3)2.nH2O), copper bromide (CuBr, CuBr2), copper carbonate (CuCO3.Cu(OH)2), copper sulfide (Cu2S, CuS), copper phthalocyanine, copper trifluoroacetate, copper isobutyrate, copper ethylacetoacetate, copper 2-ethyl hexanoate, copper fluoride, copper formate hydrate ((HCO2)2Cu.nH2O), copper gluconate, copper methoxide, copper neodecanoate, perchloric acid copper hydrate (Cu(ClO4)2.6H2O), copper sulfate, copper sulfate hydrate (CuSO4.nH2O), copper tartarate hydrate, copper trifluoro acetylacetonate and/or copper trifluoromethanesulfonate. The nickel oxide precursor is nickel chloride, nickel chloride hydrate (NiCl2.nH2O), nickel acetate hydrate (Ni(OCOCH3)2.4H2O), nickel nitrate hydrate (Ni(NO3)2.6H2O), nickel acetyl acetonate, nickel hydroxide, nickel phthalocyanine, and/or nickel carbonate hydrate. The iron oxide precursor is iron acetate, ferric chloride, ferric chloride hydrate, iron acetylacetonate, ferric nitrate hydrate and/or iron phthalocyanine. The chromium oxide precursor is chromium chloride (CrCl2, CrCl3), chromium chloride hydrate (CrCl3.nH2O), chromium acetylacetonate, and/or chromium nitrate hydrate. The bismuth oxide precursor is bismuth chloride, bismuth nitrate hydrate (Bi(NO3)3.nH2O), bismuth acetate and/or bismuth carbonate. The organic solvent is dichloroethylene, trichloroethylene, chloroform, chlorobenzene, dichlorobenzene, dichloromethane, styrene, dimethylformamide, dimethyl sulfoxide, tetrahydrofuran, xylene, toluene, cyclohexene, 2-methoxyethanol, ethanolamine, acetonitrile, butyl alcohol, isopropyl alcohol, ethanol, methanol and/or acetone. Preferred Property: The diameter of oxide semiconductor wire is 10 nm to 1000 mu m.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The organic polymer is polyvinyl alcohol, polyethylene oxide, polystyrene, polycaprolactone, polyacrylonitrile, poly(methylmethacrylate), polyimide, poly(vinylidene fluoride), polyaniline, polyvinylchloride, nylon, poly(acrylic acid), poly(dimethylsiloxane), poly(etherimide), poly(ether sulfone), poly(alkylacrylate), poly(ethylacrylate), poly(ethyl vinyl acetate), poly(ethyl-co-vinyl acetate), poly (ethylene terephthalate), poly(lactic acid-co-glycolic acid), poly(methacrylic acid)salt, poly(methylstyrene), poly(styrene sulfonic acid)salt, poly(styrene sulfonyl fluoride), poly(styrene-co-acrylonitrile), poly(styrene-co-butadiene), poly(styrene-co-divinylbenzene), poly(vinyl acetate), polylactide, poly(vinyl alcohol), polyacrylamide, polybenzimidazole, polycarbonate, poly(dimethyl siloxane-co-polyethylene oxide), poly(etheretherketone), polyethylene, polyethyleneimine, polyisoprene, polylactide, polypropylene, polysulfone, polyurethane, poly(vinylpyrrolidone), poly(phenylenevinylene) and/or poly(vinylcarbazole). The weight ratio of oxide semiconductor precursor and organic polymer in the composite solution is 10:90-97:3. The content of distilled water or organic solvent is 1-30 wt.% with respect to content of oxide semiconductor precursor and organic polymer.