NOVELTY - Modifying a silicon substrate involves providing an n-type silicon substrate (200) having a bulk and exhibiting a front surface and a rear surface; and forming dielectric layers (203, 204) on the front and rear surfaces by liquid phase application, where the dielectric layer formed at the rear surface is capable of acting as a reflector to enhance reflection of light into the bulk of the silicon substrate, and the dielectric layer formed at the front comprises oxygen, hydrogen and at least one metal or semimetal.    USE - For modifying a silicon substrate, which is used in a photovoltaic device (claimed).    ADVANTAGE - The modified silicon substrate has surface recombination velocity of less than 100 cm/second. The method is low cost method; improves electrical and optical performance photovoltaic (PV) devices by increasing efficiency of the current extraction and reducing recombination occur within the device, thus provides greater power output from the device; and enables the PV manufacturers to apply chemicals rather than work with hazardous gases to produce a series of layers that provide passivation and light utilization. The modification of the silicon substrate provides higher photo-generated minority carrier lifetime, improved internal reflection at Near Infrared (NIR) range, and subsequent efficiency of the solar device.    DETAILED DESCRIPTION - A method of modifying a silicon substrate involves providing an n-type silicon substrate (200) having a bulk and exhibiting a front surface and a rear surface; and forming dielectric layers (203, 204) on the front and rear surfaces by liquid phase application, where the dielectric layer formed at the rear surface is capable of acting as a reflector to enhance reflection of light into the bulk of the silicon substrate, and the dielectric layer formed at the front comprises oxygen, hydrogen and at least one metal or semimetal and is capable of releasing hydrogen into the bulk and onto the surfaces of the silicon substrate in order to provide hydrogenation and passivation. The layer formed on the front is capable of reducing surface and bulk recombination, and to improve light absorption, when the silicon substrate is used in a photovoltaic device. The method further involves forming a dielectric layer comprising oxygen, hydrogen and at least one metal or semimetal on the rear surface by liquid phase application, capable of releasing hydrogen into the bulk and onto the surfaces of the silicon substrate in order to provide hydrogenation and passivation.    DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of a process flow for an n-type crystalline silicon solar cell fabrication with deposition of the chemical onto the front and back surfaces of the photovoltaic device without alumina deposited by plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or sputtering.    n-Type silicon substrate (200)    Positive boron doped region (201)    Back surface field (202)    Dielectric layers (203, 204)    Contact (205)