NOVELTY - A multi-laminated multi-junction silicon thin film solar cell has structure having substrate, transparent conductive oxide layer, silicon carbide contact layer, silicon carbide window layer, silicon carbide buffer layer, laminate iA-silicon carbide layer, nA-silicon carbide layer, intermediate reflective layer, p- mu c-silicon carbide layer, i- mu c-silicon carbide layer, n- mu c-silicon carbide layer, pA-silicon layer, iA-silicon layer, nA-silicon layer, silicon germanium layer and back-reflection film. The substrate is glass, stainless steel or polymer materials.    USE - Multi-laminated multi-junction silicon thin film solar cell (claimed).    ADVANTAGE - The multi-laminated multi-junction silicon thin film solar cell has improved short circuit current density and photoelectric conversion efficiency. The multi-laminated multi-junction silicon thin film solar cell uses wide band gap contact layer to reduce the interface resistance between front electrode and TCO, and improves absorption of top cell by short wavelength blue band gap of window layer. The buffer layer reduces the use of wide band gap barrier interface, and reduces the series resistance of photovoltaic cell and absorption loss.    DETAILED DESCRIPTION - A multi-laminated multi-junction silicon thin film solar cell has structure chosen from substrate/transparent conductive oxide (TCO) layer/pA-silicon carbide contact layer/pA-silicon carbide window layer/pA-silicon carbide buffer layer/laminate iA-silicon carbide layer/nA-silicon carbide layer/intermediate reflective layer/p- mu c-silicon carbide layer/i- mu c-silicon carbide layer/n- mu c-silicon carbide layer/intermediate reflective layer/pA-silicon layer/iA-silicon layer/nA-silicon layer/intermediate reflective layer/silicon germanium layer (pA-Si1-xGex)/silicon germanium layer (iA-Si1-xGex)/silicon germanium layer (nA-Si1-xGex)/intermediate reflective layer/p- mu c-silicon layer/i- mu c-silicon layer/n- mu c-silicon layer/intermediate reflective layer/silicon germanium layer (p- mu c-Si1-xGex)/silicon germanium layer (i- mu c-Si1-xGex)/silicon germanium layer (n- mu c-Si1-xGex)/TCO/back-reflection film as arrangement (I), substrate/TCO/pA-silicon carbide contact layer/pA-silicon carbide window layer/pA-silicon carbide buffer layer/laminate iA-silicon carbide layer/nA-silicon carbide layer/intermediate reflective layer/pA-silicon layer/iA-silicon layer/nA-silicon layer/intermediate reflective layer/silicon germanium layer (pA-Si1-xGex)/silicon germanium layer (iA-Si1-xGex)/silicon-germanium layer (nA-Si1-xGex)/intermediate reflective layer/p- mu c-silicon layer/i- mu c-silicon layer/n- mu c-silicon layer/intermediate reflective layer/silicon germanium layer (p- mu c-Si1-xGex)/silicon germanium layer (i-?c-Si1-xGex)/silicon germanium layer (n- mu c-Si1-xGex)/TCO/back-reflection film as arrangement (II), substrate/TCO/pA-silicon carbide contact layer/pA-silicon carbide window layer/pA-silicon carbide buffer layer/laminate iA-silicon carbide layer/nA-silicon carbide layer/intermediate reflective layer/silicon germanium layer (pA-Si1-xGex)/silicon germanium layer (iA-Si1-xGex)/silicon germanium layer (nA-Si1-xGex)/intermediate reflective layer/p- mu c-silicon layer/i- mu c-silicon layer/n- mu c-silicon/intermediate reflective layer/silicon germanium layer (p- mu c-Si1-xGex)/silicon germanium layer (i- mu c-Si1-xGex)/silicon germanium layer (n- mu c-Si1-xGex)/TCO/back-reflection film as arrangement (III), and substrate/TCO/pA-silicon carbide contact layer/pA-silicon carbide window layer/pA-silicon carbide buffer layer/laminate iA-silicon carbide layer/nA-silicon carbide layer/intermediate reflective layer/p- mu c-silicon layer/i- mu c-silicon layer/n- mu c-silicon layer/intermediate reflective layer/silicon germanium layer (p- mu c-Si1-xGex)/silicon-germanium layer (i- mu c-Si1-xGex)/silicon germanium layer (n- mu c-Si1-xGex)/TCO/back-reflection film as arrangement (IV), where p-layer, i layer, n-layer are compound semiconductor material chosen from silicon-germanium-type compounds (c-Si1-xGex, A-Si1-xGex and mu c-Si1-xGex), c-silicon carbide, A-silicon carbide, c-silicon, A-silicon, silicon oxide complex (A-SiOx), mu c-silicon, mu c-silicon carbide and silicon oxide complex ( mu c-SiOx), n is electron (n-type) semiconductor, I is intrinsic semiconductor, p is hole-type (p-type) semiconductor, and x is more than 0 to less than 1. The substrate is glass, stainless steel or polymer materials.