TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The passivating and anti-reflection coating layers comprise hydrogenated silicon oxide which releases hydrogen which is capable of causing a reduction in the surface and bulk recombination velocity of the silicon substrate. The capping layer is capable of improving light absorption by the solar cell due to optical coupling with the layers underneath. The passivating layer comprises silicon, oxygen and hydrogen for p type silicon substrate. The anti-reflection layer comprises titanium and oxygen for p type silicon substrate; or the anti-reflection layer comprises tantalum and oxygen for p type silicon substrate. It comprises aluminum and oxygen or aluminum, silicon and oxygen for p type silicon substrate. The alkoxy group is methoxy or ethoxy. The passivating layer is capable of reducing the number of dangling bonds on the surface and bulk of the silicon substrate upon which the passivating layer is formed. The anti-reflection layer is capable of increasing the absorption on a surface of the silicon substrate upon which the passivating layer is formed. The silicon substrate is part of a photovoltaic cell. Preferred Parameter: The emitter saturation current (Joe) is less than 300 fA/cm2. Preferred Process: The passivating layer is formed by polymerizing Si(OR1)4 and/or HSi(OR1)3.R1=an alkyl group, preferably a linear or branched alkyl group having 1 to 8 carbon atoms, in particular a linear or branched alkyl group having 1 to 4 carbon atoms.The hydrogen-releasing layer is formed by polymerizing Si(OR1)4 and/or HSi(OR1)3 (for hydrogenated silicon oxide). The hydrogen-releasing layer is formed by polymerizing Ti(iOPr)4, HSi(OR1)3 and titanium tetrachloride (TiCl4) (for titanium oxide). It is formed by polymerizing Ti(iOPr)5, HSi(OR1)3 and tantalum pentachloride (TaCl5) (for tantalum oxide). It is formed by polymerizing HSi(OR1)3 and AI(iOPr)3 (for aluminum oxide and silicon oxide hybrid). Liquid phase deposition of the passivating layer is performed at atmospheric pressure. Liquid phase coating is carried out by a method selected from dip coating, slot coating, roller coating and spray coating and its combinations. The method involves vacuum depositing at least one silicon nitride (SiNx) layer in between the passivating and anti-reflection coatings; or vacuum depositing at least one SiNx layer in between the capping layers. At least one SiNx layer is deposited by plasma-enhanced chemical vapor deposition (PECVD) or sputtering. The method further involves forming at least one of the passivating and anti-reflection coatings or capping layers without a SiNx layer in-between the coatings or capping layers, respectively. The photovoltaic device is manufactured without using any vacuum deposition processes.