NOVELTY - The method involves producing a substance at a source, and causing the substance to move to an array along a line, where an angle between the line followed by the substance and a plane of a support is less than 90 degree when measured from a center of the support and the substance renders a portion of nanowires (1) nonconductive or less conductive compared to before being treated by the substance. A buffer layer is exposed in a region of an LED structure. An n-electrode in contact with the exposed buffer layer is formed, where the nanowires comprise a tip and a sidewall.    USE - Method for treating a nanowire LED structure with a substance i.e. insulator (claimed). Can also be used for treating FETs, diodes and light absorption/light generation devices such as photodetectors, solar cells and lasers.    ADVANTAGE - The method allows a dielectric capping layer to cover a reflective layer to improve device reliability. The method enables altering properties of parts of the nanowires in an LED to reduce or eliminate short-circuiting and multiple wavelength emission to maximize light production. The method allows an insulating layer on top of the nanowires to prevent or greatly reduce current leakage through the tip of the nanowires, so that current is directed to exposed areas of the sidewalls. The method enables treating the nanowire LED structure with the substance in an effective manner.    DETAILED DESCRIPTION - The substance is made of silicon dioxide, carbon-doped silicon oxide, aluminum oxide, silicon nitride, titanium oxide and hafnium oxide. The substrate layer is made of aluminum oxide, zinc oxide and silicon. An INDEPENDENT CLAIM is also included for an LED structure.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure illustrating a method for treating a LED structure with a substance.    Nanowire (1)    Indium tin oxide layer (505)    N-side metal contact (507)    P-side metal contact (905)    Photo-resist layer (1001)