NOVELTY - The driver circuit has a first driver (404a) which is configured to provide a first output voltage and a first output current to a gate (420) of a junction FET (JFET). A second driver (404b) is configured to activate a second output voltage on a boost capacitance. The boost capacitance is configured to boost the JFET and to activate the back unloading. The JFET is a silicon carbide (SiC) JFET (408), and provided with a drain (412) and a source (416). The drain is configured to provide a high current output during an ON state.    USE - Driver circuit for driving junction FET (JFET) e.g. silicon carbide (sic) JFET (claimed), application circuit, P-type MOSFET (PMOS), N-type MOSFET (NMOS), and NPN bipolar junction transistor (BJT) used in photovoltaic (PV) inverter, electrical and hybrid electrical vehicles, diagonal hole drilling e.g. downhole drilling, wind turbine, power factor corrector, and current/voltage insulator.    ADVANTAGE - The driver circuit can be adapted for different types and sizes of SiC JFET, boost capacitance and MOSFET. The booster can be used in a power supply in order to drive the SiC JFET with a higher power efficiency. The use of a boost capacitance simplifies the driving circuit to a high degree, and increases the efficiency of the SiC JFET. The less power is required from the power supply to operate the SiC JFET, and less power is required to start and maintain the SiC JFET in its on state. A master control signal is used to trigger both the first and the second drivers directly, without the need to control the two drivers to coordinate separately. The duration of the initial connection stream for the driver circuit can be easily adapted. The need for a third power supply to manage the efficiency of the driving current is avoided.    DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:    (1) an electrical isolation circuit; and    (2) a method for using first and second drivers for driving sic JFET.    DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram illustrating the process of driving the of driver circuit which is used for SiC JFET.    Driver (404a,404b)    SiC JFET (408)    Drain of SiC JFET (412)    Source of SiC JFET (416)    Gate of SiC JFET (420)